Fabrication and etching processes of silicon-based PZT thin films
NASA Astrophysics Data System (ADS)
Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian
2001-09-01
Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.
NASA Astrophysics Data System (ADS)
Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda
2013-07-01
Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.
Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses
NASA Astrophysics Data System (ADS)
Kesim, M. T.; Zhang, J.; Trolier-McKinstry, S.; Mantese, J. V.; Whatmore, R. W.; Alpay, S. P.
2013-11-01
Ferroelectric lead zirconate titanate [Pb(ZrxTi1-xO)3, (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 °C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 μC cm-2 °C-1, comparable to bulk values) at a growth temperature of 550 °C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process.
Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.
Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae
2014-04-23
A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PZT Thin-Film Micro Probe Device with Dual Top Electrodes
NASA Astrophysics Data System (ADS)
Luo, Chuan
Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths should be less than 3 mm in order to guarantee the first resonant frequency above 60 kHz. Finally, a package for the PZT thin-film micro probe device is developed to ensure its proper function in an aqueous environment, such as inside of cochlea. The package is an insulation layer of parylene coating on the probe. A finite element analysis indicates that a coating thickness of less than 1 mum will reduce the PZT diaphragm displacement by less than 10%. A special fixture is designed to hold a large number of probes for parylene deposition of a thickness of 250 nm. A packaged probe is then submerged in deionized water and functions properly for at least 55 hours. Displacement and impedance of the probe are measured via a laser Doppler vibrometer and an impedance analyzer, respectively. Experimental results show that displacement of the PZT diaphragm increases about 30% in two hours, after the probe is submerged in the deionized water. The impedance measurement shows consistent trends. A hypothesis to explain this unusual phenomenon is diffusion of water molecules into the PZT thin film. High-resolution SEM images of the probe indicate presence of numerous nano-pores in the surface of the PZT thin film, indirectly confirming the hypothesis. Keywords: PZT, Thin-Film, Dual Electrodes, Parylene Coating, Aqueous Environment, Cochlear Implant
Flexible PZT Thin Film Tactile Sensor for Biomedical Monitoring
Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong
2013-01-01
This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g. PMID:23698262
Flexible PZT thin film tactile sensor for biomedical monitoring.
Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong
2013-04-25
This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.
Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.
Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon
2017-03-01
The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.
NASA Astrophysics Data System (ADS)
Kobayashi, T.; Maeda, R.; Itoh, T.
2008-11-01
In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.
Performance of magnetoelectric PZT/Ni multiferroic system for energy harvesting application
NASA Astrophysics Data System (ADS)
Gupta, Reema; Tomar, Monika; Kumar, Ashok; Gupta, Vinay
2017-03-01
Magnetoelectric (ME) coefficient of Lead Zirconium Titanate (PZT) thin films has been probed for possible energy harvesting applications. Single phase PZT thin films have been deposited on nickel substrate (PZT/Ni) using pulsed laser deposition (PLD) technique. The effect of PLD process parameters on the ME coupling coefficient in the prepared systems has been investigated. The as grown PZT films on Ni substrate were found to be polycrystalline with improved ferroelectric and ferromagnetic properties. The electrical switching behavior of the PZT thin films were verified using capacitance voltage measurements, where well defined butterfly loops were obtained. The ME coupling coefficient was estimated to be in the range of 94.5 V cm-1 Oe-1-130.5 V cm-1 Oe-1 for PZT/Ni system, which is large enough for harnessing electromagnetic energy for subsequent applications.
NASA Astrophysics Data System (ADS)
Che, L.; Halvorsen, E.; Chen, X.
2011-10-01
The existence of insoluble residues as intermediate products produced during the wet etching process is the main quality-reducing and structure-patterning issue for lead zirconate titanate (PZT) thin films. A one-step wet etching process using the solutions of buffered HF (BHF) and HNO3 acid was developed for patterning PZT thin films for microelectomechanical system (MEMS) applications. PZT thin films with 1 µm thickness were prepared on the Pt/Ti/SiO2/Si substrate by the sol-gel process for compatibility with Si micromachining. Various compositions of the etchant were investigated and the patterns were examined to optimize the etching process. The optimal result is demonstrated by a high etch rate (3.3 µm min-1) and low undercutting (1.1: 1). The patterned PZT thin film exhibits a remnant polarization of 24 µC cm-2, a coercive field of 53 kV cm-1, a leakage current density of 4.7 × 10-8 A cm-2 at 320 kV cm-1 and a dielectric constant of 1100 at 1 KHz.
Lead zirconate titanate (PZT)-based thin film capacitors for embedded passive applications
NASA Astrophysics Data System (ADS)
Kim, Taeyun
Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52/48) based thin film capacitors for embedded passive capacitor application were performed using electroless Ni coated Cu foils as substrates. Undoped and Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition. For PZT (52/48) thin film capacitors on electroless Ni coated Cu foil, voltage independent (zero tunability) capacitance behavior was observed. Dielectric constant reduced to more than half of the identical capacitor processed on Pt/SiO2/Si. Dielectric properties of the capacitors were mostly dependent on the crystallization temperature. Capacitance densities of almost 350 nF/cm2 and 0.02˜0.03 of loss tangent were routinely measured for capacitors crystallized at 575˜600°C. Leakage current showed dependence on film thickness and crystallization temperature. From a two-capacitor model, the existence of a low permittivity interface layer (permittivity ˜30) was suggested. For Ca-doped PZT (52/48) thin film capacitors prepared on Pt, typical ferroelectric and dielectric properties were measured up to 5 mol% Ca doping. When Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil, phase stability was influenced by Ca doping and phosphorous content. Dielectric properties showed dependence on the crystallization temperature and phosphorous content. Capacitance density of ˜400 nF/cm2 was achieved, which is an improvement by more than 30% compared to undoped composition. Ca doping also reduced the temperature coefficient of capacitance (TCC) less than 10%, all of them were consistent in satisfying the requirements of embedded passive capacitor. Leakage current density was not affected significantly by doping. To tailor the dielectric and reliability properties, ZrO2 was selected as buffer layer between PZT and electroless Ni. Only RF magnetron sputtering process could yield stable ZrO2 layers on electroless Ni coated Cu foil. Other processes resulted in secondary phase formation, which supports the reaction between PZT capacitor and electroless Ni might be dominated by phosphorous component. (Abstract shortened by UMI.)
Development of lead zirconate titanate cantilevers on the micrometer length scale
NASA Astrophysics Data System (ADS)
Martin, Christopher Robert
The objective of this research project was to fabricate a functional ferroelectric microcantilever from patterned lead zirconate titanate (PZT) thin films. Cantilevers fabricated from ferroelectric materials have tremendous potential in sensing applications, particularly due to the increased sensitivity that miniaturized devices offer. This thesis highlights and explores a number of the processing issues that hindered the production of a working prototype. PZT is patterned using soft lithography-inspired techniques from a PZT chemical precursor solution derived by the chelation synthesis route. As the ability to pattern ceramic materials derived from sol-gels on the micrometer scale is a relatively new technology, this thesis aims to expand the scientific understanding of new issues that arise when working with these patterned films. For example, the use of Micromolding in Capillaries (MIMIC) to pattern the PZT thin films results in the evolution of topographical distortions from the shape of the original mold during the shrinkage of patterned thin film during drying and sintering. The factors that contribute to this effect have been explained and a new processing technique called MicroChannel Molding (muCM) was developed. This new process combines the advantages of soft lithography with traditional silicon microfabrication techniques to ensure compatibility with current industrial practices. This work lays the foundation for the future production of working ferroelectric microcantilevers. The proposed microfabrication process is described along with descriptions of each processing difficulty that was encountered. Modifications to the process are proposed along with the descriptions of alternative processing techniques that were attempted for the benefit of future researchers. This dissertation concludes with the electronic characterization of micropattemed PZT thin films. To our knowledge, the ferroelectric properties of patterned PZT thin films have never been directly characterized before. The properties are measured with a commercial ferroelectric test system connected through a conductive Atomic Force Microscope tip. The films patterned by MIMIC and muCM are compared to large-area spin cast films to identify the role that the processing method has on the resulting properties.
NASA Astrophysics Data System (ADS)
Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.
2017-11-01
Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.
George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J
2015-06-24
The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.
Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors
2011-12-01
synthesis and texture analysis Sol-gel deposition and RF sputtering process was developed for deposition of PZT on Pt/Ti/Si02/Si (hereafter...well textured (i.e. with preferred crystalline orientation). To texture and obtain crack-free thick PZT RF films, we employed pre- treated substrates...and post-deposition annealing. One pre-treatment was the use of seed layer of textured PZT sol-gel thin film of thickness 65-85nm [1]. • Oean
High-temperature crystallized thin-film PZT on thin polyimide substrates
NASA Astrophysics Data System (ADS)
Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.
2017-10-01
Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.
Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers
NASA Astrophysics Data System (ADS)
Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat
2006-05-01
Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.
NASA Astrophysics Data System (ADS)
Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku
2015-10-01
We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.
Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors
NASA Astrophysics Data System (ADS)
Lee, J.; Esayan, S.; Safari, A.; Ramesh, R.
1994-07-01
Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.
Active Structural Fibers for Multifunctional Composite Materials
2014-05-06
capacitors. Lastly, a cathodic electrolytic deposition process has been investigated for the coating of carbon fibers with a PZT shell. The...results have demonstrated the ability to use the process to coat fibers with a thin shell of PZT . The results thus far have demonstrated the feasibility...Journal of Composite Materials, In Review. 2. Zhou, Z., Lin, Y. and Sodano, H.A., Synthesis and Characterization of Textured BaTiO3 Thin Films
NASA Astrophysics Data System (ADS)
Schatz, A.; Pantel, D.; Hanemann, T.
2017-09-01
Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.
Lift-off process for fine-patterned PZT film using metal oxide as a sacrificial layer
NASA Astrophysics Data System (ADS)
Trong Tue, Phan; Shimoda, Tatsuya; Takamura, Yuzuru
2017-01-01
Patterning of lead zirconium titanate (PZT) films is crucial for highly integrated piezoelectric/ferroelectric micro-devices. In this work, we report a novel lift-off method using solution-processed indium zinc oxide (IZO) thin film as a sacrificial layer for sub-5 µm fine-patterning PZT film. The processes include IZO layer deposition and patterning, PZT film preparation, and final lift-off. The results reveal that the lift-off PZT processes provide better structural and electrical properties than those formed by the conventional wet-etching method. The successful patterning by the lift-off was mainly due to the fact that the IZO sacrificial layer is easy to etch and has a high-temperature resistance. This finding shows great promise for highly integrated electronic devices.
NASA Astrophysics Data System (ADS)
Keeble, D. J.; Krishnan, A.; Umlor, M. T.; Lynn, K. G.; Warren, W. L.; Dimos, D.; Tuttle, B. A.
Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O3 (PZT) materials have been completed. This paper examines effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films, and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.
Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.
Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie
2012-01-05
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.
NASA Astrophysics Data System (ADS)
Chien, Diana
This work focuses on the development of atomic layer deposition (ALD) for lead zirconate titanate, Pb(ZrxTi1-x)O 3 (PZT). Leveraging the surface-reaction controlled process based on alternating self-limiting surface reactions, PZT can be synthesized not only with elemental precision to realize the desired composition (Zr/Ti = 52/48) but also with outstanding conformality. The latter enables the integration of PZT with a ferromagnetic phase to realize multiferroism (MF) and magnetoelectric (ME) effect. Since PZT is one of the best known ferroelectric and piezoelectric materials due the large displacements of the Pb ions at the morphotropic phase boundary, PZT based MF composites could lead to stronger ME coupling through strain coupling at the interface. Specifically, ALD PZT thin films were synthesized by using beta-diketonate metalorganic precursors Pb(TMHD)2, Zr(TMHD)4, and Ti(O.i-Pr) 2(TMHD)2 and H2O. The number of local cycles and global cycles were regulated to achieve the desired stoichiometry and thickness, respectively. ALD of PZT was studied to obtain (100) textured PZT on Pt (111) oriented platinized silicon substrates. In order to attain a highly oriented PZT thin film, a (100) textured PbTiO3 seed layer was required because PZT orientation is governed by nucleation. MF nanocomposites were engineered using ALD PZT thin films to achieve controlled complex nanoscale structures, enabling porosity to be studied as a new additional parameter for nanocomposite architectures to enhance ME effect. Specifically, 3--6 nm-thick ALD PZT thin films were deposited to uniformly coat the walls of mesoporous cobalt ferrite (CFO) template. The PZT/CFO nanocomposites were electrically poled ex-situ and the change in magnetic moment was measured. The inverse magnetoelectric coupling coefficient, a, was determined to be 85.6 Oe-cm/mV. The in-plane results show no significant change in magnetization (1--4%) as a function of electric field, which was expected due to the effect of substrate clamping. The out-of-plane magnetization showed that the mesoporous CFO coated with 3-nm-thick PZT film had a greater saturation magnetization change of 15% compared to 10% for the 6-nm-thick PZT film. This indicates that the flexibility in the partially filled pores enhances the ME coupling. Additionally, ALD PZT films were integrated between MgO and CoFeB layers to fabricate magnetic tunnel junctions (MTJ), which was the first work to demonstrate increased voltage controlled magnetic anisotropy (VCMA) effect in a complete MTJ stack using a high dielectric material within the tunnel barrier and exhibit sizeable tunneling magnetoresistance (TMR) at room temperature. The fabricated PZT MTJs with the MgO/PZT/MgO barrier demonstrated a VCMA coefficient which is ˜40% higher (20 fJ/V-m) than MgO MTJs (14 fJ/V-m) and TMR of more than 50% at room temperature, comparable to that of the MgO MTJs. The enhanced VCMA coefficient and sizeable TMR makes PZT MTJs potential candidates for future voltage-controlled, ultralow-power magnetic random access memory devices. ALD enables the growth of conformal ultra-thin PZT films, which can then be integrated to engineer nanoscale multiferroic composites for various applications.
Effect of substrate bending on the piezoelectric measurement of PZT thin film
NASA Astrophysics Data System (ADS)
Xu, Xiaohui; Tang, Jianhong; He, Liangna
2009-05-01
Bonding conditions between PZT thin film and sample holder greatly affect the strain measurement of the PZT sample. The influence of various bonding conditions on the measured displacement were analyzed using finite element analysis (FEA). One-end fixed sample induces the maximum bending displacement. Experiments were performed on sol-gel derived PZT thin film. The voltage-displacement curve and "butterfly" loop were measured using laser Doppler method with phase detection. Experimental results agreed well with the simulated ones. The measured frequency dependence of piezoelectric response of PZT thin film indicated that, if the operating frequency was lower than 2 kHz, good bonding effect could be obtained when the entire back surface of the sample was glued to a rigid supporter using epoxy resin. A simple bonding model which considered the adhesives as a spring was used to estimate the frequency response of PZT thin film sample.
Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
2012-01-01
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2. PMID:22221519
Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.
Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M
2018-05-01
Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.
Feng, Guo-Hua; Liu, Wei-Fan
2013-10-09
This paper presents the microfabrication of an acoustic impedance gradient matching layer on a spherically-shaped piezoelectric ultrasonic transducer. The acoustic matching layer can be designed to achieve higher acoustic energy transmission and operating bandwidth. Also included in this paper are a theoretical analysis of the device design and a micromachining technique to produce the novel transducer. Based on a design of a lead titanium zirconium (PZT) micropillar array, the constructed gradient acoustic matching layer has much better acoustic transmission efficiency within a 20-50 MHz operation range compared to a matching layer with a conventional quarter-wavelength thickness Parylene deposition. To construct the transducer, periodic microcavities are built on a flexible copper sheet, and then the sheet forms a designed curvature with a ball shaping. After PZT slurry deposition, the constructed PZT micropillar array is released onto a curved thin PZT layer. Following Parylene conformal coating on the processed PZT micropillars, the PZT micropillars and the surrounding Parylene comprise a matching layer with gradient acoustic impedance. By using the proposed technique, the fabricated transducer achieves a center frequency of 26 MHz and a -6 dB bandwidth of approximately 65%.
NASA Astrophysics Data System (ADS)
Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku
2017-10-01
We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.
NASA Astrophysics Data System (ADS)
Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping; Lan, Kuibo
2017-07-01
In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples.
NASA Astrophysics Data System (ADS)
Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping
2018-01-01
La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.
Theoretical calculations and performance results of a PZT thin film actuator.
Hoffmann, Marcus; Küppers, Hartmut; Schneller, Theodor; Böttger, Ulrich; Schnakenberg, Uwe; Mokwa, Wilfried; Waser, Rainer
2003-10-01
High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. This paper presents simulation, fabrication, and development results of a stress-compensated, PZT-coated cantilever concept in which a silicon bulk micromachining process is used in combination with a chemical solution deposition (CSD) technique. Due to an analytical approach and a finite element method (FEM) simulation for a tip displacement of 10 microm, the actuator was designed with a cantilever length of 300 microm to 1000 microm. Special attention was given to the Zr/Ti ratio of the PZT thin films to obtain a high piezoelectric coefficient. For first characterizations X-ray diffraction (XRD), scanning electron microscopy (SEM), hysteresis-, current-voltage I(V)- and capacitance-voltage C(V)-measurements were carried out.
Feng, Guo-Hua; Liu, Wei-Fan
2013-01-01
This paper presents the microfabrication of an acoustic impedance gradient matching layer on a spherically-shaped piezoelectric ultrasonic transducer. The acoustic matching layer can be designed to achieve higher acoustic energy transmission and operating bandwidth. Also included in this paper are a theoretical analysis of the device design and a micromachining technique to produce the novel transducer. Based on a design of a lead titanium zirconium (PZT) micropillar array, the constructed gradient acoustic matching layer has much better acoustic transmission efficiency within a 20–50 MHz operation range compared to a matching layer with a conventional quarter-wavelength thickness Parylene deposition. To construct the transducer, periodic microcavities are built on a flexible copper sheet, and then the sheet forms a designed curvature with a ball shaping. After PZT slurry deposition, the constructed PZT micropillar array is released onto a curved thin PZT layer. Following Parylene conformal coating on the processed PZT micropillars, the PZT micropillars and the surrounding Parylene comprise a matching layer with gradient acoustic impedance. By using the proposed technique, the fabricated transducer achieves a center frequency of 26 MHz and a −6 dB bandwidth of approximately 65%. PMID:24113683
Morphology-dependent photo-induced polarization recovery in ferroelectric thin films
NASA Astrophysics Data System (ADS)
Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.
2017-08-01
We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.
Emission study on the gamma-ray irradiation effects on the ferroelectric Pb(Zr,Ti)O3 thin films
NASA Astrophysics Data System (ADS)
Lee, Yunsang; Lim, Junwhi; Yang, Sun A.; Bu, S. D.
We investigated the photoluminescence of the gammy-ray irradiated Pb(Zr,Ti)O3 (PZT) thin films with the various total doses up to 1000 kGy. The PZT thin films were prepared on the Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. It was found that the visible emission emerges near 550 nm with the gamma-ray irradiation. The intensity of the emission increased with the increasing dose amount. The spectral feature of the gamma-ray induced emission was quite narrow, which was distinguished from that formed by normal defects such as oxygen vacancy. We suggest that the gamma-ray irradiation should generate a specific type of defect state inside the PZT films, which could be detected by the low temperature photoluminescence spectroscopy.
NASA Astrophysics Data System (ADS)
Lim, Junhwi; Lee, Y. S.; Yang, Sun A.; Bu, Sang Don
2016-06-01
We investigated the visible emission property of Pb(Zr,Ti)O3 (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.
Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Dufay, T.; Guiffard, B.; Seveno, R.
Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beammore » displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.« less
NASA Astrophysics Data System (ADS)
Guiffard, B.; Seveno, R.
2015-01-01
In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.
Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment
NASA Astrophysics Data System (ADS)
Kaneda, Toshihiko; Kim, Joo-Nam; Tokumitsu, Eisuke; Shimoda, Tatsuya
2010-09-01
A thermal press treatment was introduced in the sol-gel process of PbZrxTi1-xO3 (PZT) thin films for the first time and the crystalline and electrical characteristics of the PZT films were investigated. The thermal press treatment was applied to the amorphous PZT gel film before crystallization annealing. It is found that the crystalline orientation and grain size of the PZT film fabricated with the thermal press treatment are different from those of the film fabricated by the conventional sol-gel process without the thermal press treatment, even though the crystallization conditions are exactly the same. It is demonstrated that the electrical properties, especially leakage current density and breakdown field, are significantly improved for the PZT film fabricated with the thermal press treatment. Furthermore, we also demonstrate that the fatigue property is improved by introducing the thermal press treatment.
Dielectric and acoustical high frequency characterisation of PZT thin films
NASA Astrophysics Data System (ADS)
Conde, Janine; Muralt, Paul
2010-02-01
Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.
NASA Astrophysics Data System (ADS)
Wang, Chun; Laughlin, David E.; Kryder, Mark H.
2007-04-01
Epitaxial lead zirconium titanate (PZT) (001) thin films with a Pt bottom electrode were deposited by rf sputtering onto Si(001) single crystal substrates with a Ag buffer layer. Both PZT(20/80) and PZT(53/47) samples were shown to consist of a single perovskite phase and to have the (001) orientation. The orientation relationship was determined to be PZT(001)[110]‖Pt(001)[110]‖Ag(001)[110]‖Si(001)[110]. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer. The measured remanent polarization Pr and coercive field Ec of the PZT(20/80) thin film were 26μC /cm2 and 110kV/cm, respectively. For PZT(53/47), Pr was 10μC /cm2 and Ec was 80kV/cm.
NASA Astrophysics Data System (ADS)
Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli
2016-12-01
In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhong, Jian; Batra, Vaishali; Han, Hui
The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structuremore » with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.« less
Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates
2014-09-01
function of heating rate. The FWHM of the Ill PZT texture components is sim 2978 Journal of the American Ceramic Society Mhin et al. Vol. 97, No. 9...Z39.18 ABSTRACT Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates Report Title The crystallization of lead zirconate...phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented
Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films
NASA Astrophysics Data System (ADS)
Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo
2001-08-01
The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors.
NASA Astrophysics Data System (ADS)
Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi
2017-10-01
A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.
NASA Astrophysics Data System (ADS)
Mukherjee, Devajyoti; Hyde, Robert; Mukherjee, Pritish; Srikanth, Hariharan; Witanachchi, Sarath
2012-03-01
Pb depletion in Pb(Zr0.52Ti0.48)O3 (PZT) thin films has remained as a major setback in the growth of defect-free PZT thin films by pulsed laser ablation techniques. At low excimer (KrF) laser fluences, the high volatility of Pb in PZT leads to non-congruent target ablation and, consequently, non-stoichiometric films, whereas, at high laser fluences, the inherent ejection of molten droplets from the target leads to particulate laden films, which is undesirable in heterostructure growth. To overcome these issues, a dual-laser ablation (PLDDL) process that combines an excimer (KrF) laser and CO2 laser pulses was used to grow epitaxial PZT films on SrTiO3 (100) and MgO (100) substrates. Intensified-charge-coupled-detector (ICCD) images and optical emission spectroscopy of the laser-ablated plumes in PLDDL revealed a broader angular expansion and enhanced excitation of the ablated species as compared to those for single-laser ablation (PLDSL). This led to the growth of particulate-free PZT films with higher Pb content, better crystallinity, and lower surface roughness as compared to those deposited using PLDSL. For FE measurements, PZT capacitors were fabricated in situ using the latticed-matched metallic oxide, La0.7Sr0.3MnO3, as the top and bottom electrodes. PZT films deposited using PLDDL exhibited enhanced polarization for all driving voltages as compared to those deposited using PLDSL. A highest remanent polarization (Pr) of ˜91 μC/cm2 and low coercive field of ˜40 kV/cm was recorded at 9 V driving voltage. Fatigue characterization revealed that PZT films deposited using PLDDL showed unchanging polarization, even after 109 switching cycles.
High Performance Piezoelectric Actuators and Wings for Nano Air Vehicles
2012-08-26
we designed and fabricated the LionFly, a flapping wing prototype actuated by a PZT -5H bimorph actuator. Several LionFly prototypes were fabricated...in the literature, using PZT thin film actuators directly coupled to a 2.5 mm SiO2/Si3N4/T i-Au wing that produces large flapping angle at resonance...for larger scale mechanisms [17, 9]. For PAVs, linear electromagnetic ac- tuation [21] and bulk PZT bimorph actuators [8], and thin film PZT unimorph
Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi
2013-04-01
The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.
Static/dynamic trade-off performance of PZT thick film micro-actuators
NASA Astrophysics Data System (ADS)
Bienaimé, Alex; Chalvet, Vincent; Clévy, Cédric; Gauthier-Manuel, Ludovic; Baron, Thomas; Rakotondrabe, Micky
2015-07-01
Piezoelectric actuators are widespread in the design of micro/nanorobotic tools and microsystems. Studies toward the integration of such actuators in complex micromechatronic systems require the size reduction of these actuators while retaining a wide range of performance. Two main fabrication processes are currently used for the fabrication of piezoelectric actuators, providing very different behaviors: (i) the use of a bulk lead zirconate titanate (PZT) layer and (ii) the use of thin film growth. In this paper, we propose a trade-off between these two extreme processes and technologies in order to explore the performance of new actuators. This resulted in the design and fabrication of thick film PZT unimorph cantilevers. They allowed a high level of performance, both in the static (displacement) and dynamic (first resonance frequency) regimes, in addition to being small in size. Such cantilever sizes are obtained through the wafer scale bonding and thinning of a PZT plate onto a silicon on insulator wafer. The piezoelectric cantilevers have a 26 μm thick PZT layer with a 5 μm thick silicon layer, over a length of 4 mm and a width of 150 μm. Experimental characterization has shown that the static displacements obtained are in excess of 4.8 μm V-1 and the resonance frequencies are up to 1103 Hz, which are useful for large displacements and low voltage actuators.
Fatigue mechanism verified using photovoltaic properties of Pb(Zr0.52Ti0.48)O3 thin films
NASA Astrophysics Data System (ADS)
Wu, Ming; Li, Wei; Li, Junning; Wang, Shaolan; Li, Yaqi; Peng, Biaolin; Huang, Haitao; Lou, Xiaojie
2017-03-01
The photovoltaic effect and its evolution during electrical fatigue in Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been investigated. It is found that the photovoltaic effect of the as-grown PZT thin film is highly affected by the asymmetric Schottky barriers, which can be tuned by applying an external electric field. During fatigue processes, both open-circuit voltage (Voc) and short-circuit current (Jsc) decrease considerably with the increase of the number of electrical cycles. This phenomenon could be ascribed to the degradation of the interfacial layer between the thin film and the electrode induced by highly energetic charge carriers injected from the electrode during bipolar cycling. Our work sheds light on the physical mechanism of both ferroelectric photovoltaics and polarization fatigue in thin-film ferroelectrics.
NASA Astrophysics Data System (ADS)
Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji
2017-12-01
This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.
Electro-Caloric Properties of BT/PZT Multilayer Thin Films Prepared by Sol-Gel Method.
Kwon, Min-Su; Lee, Sung-Gap; Kim, Kyeong-Min
2018-09-01
In this study, Barium Titanate (BT)/Lead Zirconate Titanate (PZT) multilayer thin films were fabricated by the spin-coating method on Pt (200 nm)/Ti (10 nm) SiO2 (100 nm)/P-Si (100) substrates using BaTiO3 and Pb(Zr0.90Ti0.10)O3 metal alkoxide solutions. The coating and heating procedure was repeated several times to form the multilayer thin films. All of BT/PZT multilayer thin films show X-ray diffraction patterns typical to a polycrystalline perovskite structure and a uniform and void free grain microstructure. The thickness of the BT and PZT film by one-cycle of drying/sintering was approximately 50 nm and all of the films consisted of fine grains with a flat surface morphology. The electrocaloric properties of BT/PZT thin films were investigated by indirect estimation. The results showed that the temperature change ΔT can be calculated as a function of temperature using Maxwell's relation; the temperature change reaches a maximum value of ~1.85 °C at 135 °C under an applied electric field of 260 kV/cm.
Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.
Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan
2016-07-11
The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.
Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.
Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi
2012-01-01
In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE
Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.
Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan
2013-05-10
Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.
Multiferroic Applications of Nanoarchitectured, Solution-Processed Materials
NASA Astrophysics Data System (ADS)
Buditama, Abraham Nataniel
This dissertation compiles work on sol-gel syntheses of multiferroic materials and applications thereof. Multiferroics, or materials that simultaneously exhibit multiple order parameters such as ferromagnetism, ferroelectricity, or ferroelasticity, may be fabricated by solution processing techniques. Specifically, these techniques may be used to control both the atomic and the nanoscale structures of piezoelectric lead zirconate titanate (PbZrxTi 1-xO3 or PZT) and magnetostrictive cobalt ferrite (CoFe 2O4 or CFO). The first part of this work focuses on strain-coupling PZT and CFO into a magnetoelectric composite. A mesoporous CFO framework was synthesized using block copolymer templating, which was subsequently conformally filled by PZT by atomic layer deposition (ALD). The final porosity of the film is controlled by the ALD PZT layer, and we show that this porosity influences the magnetoelectric coupling of the composite. An ex situ external electric field is applied to the composite, and samples with the greatest porosity, and thus greatest mechanical flexibility, were able to accommodate strain transfer to the CFO, resulting in a greater reduction of the sample saturation magnetization. The second part of this work focuses on using solution processing to control domain-level contributions to the material's ferroic properties. An iterative spin coating process can be used to create PZT films of arbitrary thickness. Electric domains are generally pinned in nanoscale PZT thin films, but models of PZT films on the mesoscale must consider domain reorientation. As for CFO, solution processing may be used to control the CFO grain size, which in turn limits the size of its magnetic domains, and subsequently its static magnetic properties.
NASA Astrophysics Data System (ADS)
Wang, Yin Jie; Chen, Chao Ting; Chen, Jiun Jung; Yeh, Sou Peng; Wu, Wen Jong
2015-03-01
To harvest energy from human motion and generate power for the emerging wearable devices, energy harvesters are required to work at very low frequency. There are several studies based on energy harvesting through human gait, which can generate significant power. However, when wearing these kind of devices, additional effort may be required and the user may feel uncomfortable when moving. The energy harvester developed here is composed of a 10 μm PZT thin-film deposited on 50 μm thick stainless steel foil by the aerosol deposition method. The PZT layer and the stainless steel foil are both very thin, thus the patch is highly flexible. The patch can be attached on the skin to harvester power through human motions such as the expansion of the chest region while breathing. The energy harvester will first be tested with a moving stage for power output measurements. The energy density can be determined for different deformation ranges and frequencies. The fabrication processes and testing results will all be detailed in this paper.
NASA Astrophysics Data System (ADS)
Böttger, U.; Waser, R.
2017-07-01
The existence of non-ferroelectric regions in ferroelectric thin films evokes depolarization effects leading to a tilt of the P(E) hysteresis loop. The analysis of measured hysteresis of lead zirconate titanate (PZT) thin films is used to determine a depolarization factor which contains quantitative information about interfacial layers as well as ferroelectrically passive zones in the bulk. The derived interfacial capacitance is smaller than that estimated from conventional extrapolation techniques. In addition, the concept of depolarization is used for the investigation of fatigue behavior of PZT thin films indicating that the mechanism of seed inhibition, which is responsible for the effect, occurs in the entire film.
Miniaturized Nanocomposite Piezoelectric Microphones for UAS Applications
2012-10-22
volume fraction for three different materials: ZnO/SU-8 composite, ZnO thin film, and PZT thin film. This was computed for a microphone of outer...radius, 2 400R mμ= , and a thickness 1t mμ= . Note the significant increase in sensitivity compared to a solid ZnO or PZT film. This arises because, as...predicted range. An optimal volume fraction of 0.3 yielded a 17-fold increase in sensitivity over ZnO and a 49-fold increase over PZT . Figure 6
Optimization of PbTiO3 Seed Layers for PZT MEMS Actuators
2008-12-01
14. ABSTRACT The material properties of sol-gel lead zirconate titanate ( PZT ) are inherently linked with its crystallinity and texture . The use...will lead to a greater degree of texturing within the PZT thin film. Figure 6. X-ray diffraction data for PT seed solution. (001) oriented...previous studies PZT 45/55 has shown a higher piezoelectric coefficient compared to PZT 52/48 due to the random crystalline texture of the existing
Preparation and properties of sol-gel derived PZT thin films for decoupling capacitor applications
NASA Astrophysics Data System (ADS)
Schwartz, R. W.; Dimos, D.; Lockwood, S. J.; Torres, V. M.
The use of ceramic thin films as decoupling capacitors offers the possibility of capacitor integration within the integrated circuit (IC) package and, potentially, directly onto the IC itself. Since these configurations minimize series inductance, higher operational speeds are possible. In the present study, the authors have investigated the dielectric and leakage characteristics of sol-gel PZT films. For compositions near the morphotropic phase boundary, dielectric constants of 1000, and loss tangents of about 0.02, are observed. The current-voltage behavior of the capacitors is characterized by a non-linear response, and significant asymmetry in both the leakage and breakdown characteristics as a function of bias sign is observed. Breakdown fields for PZT 53/47 thin films are typically approximately 800 kV/cm at 25 C. The authors have also studied the effects of La and Nb dopant additions and alternate firing strategies on film leakage characteristics. Donor doping at 2 - 5 mol % lowers leakage currents by a factor of 10(exp 3). For films prepared by a multilayering approach, firing each layer to crystallization results in leakage currents that are a factor of 10(exp 2) lower than films prepared by the standard process.
Lee, Tai-Kuang; Liuand, Chao-Te; Lee, Wen-Hsi
2017-01-01
Recently, Thin Film Transistors (TFTs) have been studied widely because of potential applications in low cost, low-temperature process and flexible displays. They can be fabricated by easy processes based on solution methods. But the mobility of organic TFTs is lower and the threshold voltage is higher than amorphous Si TFTs. In order to enhance the channel mobility and satisfy with the requirement of low-cost fabrication, we prepare a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. In our investigations, we attempt to obtain a high performance and low-cost TFT via preparing materials, designing device structure, and using PZT inkjet-printing technology. A stable and non-precipitated metal oxide ink with appropriate doping was prepared for the fabrication of an InxZn1.5Sn1.0 (IZTO) by PZT inkjet-printing. The soluble direct-printing process is a powerful tool for material research and implies that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications. Transparent materials including dielectric PVP, conductive carbon nanotube (CNT) and active IZTO were employed into the fabrication of our PZT inkjet-printing process. After annealed at 180 °C, The experimental all-printed TFT exhibit the carrier mobility of 0.194 cm2/Vs, sub-threshold slope of 20 V/decade, and the threshold voltage of 5 V, initially. All-inkjet-printed films have great transparency, potentially in transparent electronics and the transmittance pattern in visible part of the spectrum (400–700 nm) is over 80%.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vu, Hien Thu; Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn; Inorganic Materials Science
2015-12-15
Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectricmore » properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.« less
NASA Astrophysics Data System (ADS)
Cui, Jizhai; Liang, Cheng-Yen; Paisley, Elizabeth A.; Sepulveda, Abdon; Ihlefeld, Jon F.; Carman, Gregory P.; Lynch, Christopher S.
2015-08-01
Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the "onion" state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.
Optimization of PZT Thin Film Crystalline Orientation Through Optimization of TiO2/Pt Templates
2011-01-01
with 90% textured volume fraction, which is expected to improve electrical properties of the PZT films. 15. SUBJECT TERMS Sputter film, Pt...INTENTIONALLY LEFT BLANK. 1 1. Introduction A wide variety of the physical properties of materials ...device fabrication. Because the Pt electrode crystallographic texture acts as a template for PZT film growth, the properties of ferroelectric PZT
Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors
2012-02-28
texture E analysis w cated by poo re accounted n measurem 8 sol-gel samp d PZT sol-g as utilized t r fit between in the mo ent spot). les shown i el...nsformer str nted by aero ure. ure 34: Un were grow as varied in D) as show texturing in . D pattern of the films d ucture. Figu sol jet depo ipoled PZT ...the detailed characterization was the development of prediction models for texturing of PZT sol-gel thin films, an understanding of the analytical
NASA Astrophysics Data System (ADS)
Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji
2017-07-01
This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.
Texture control and seeded nucleation of nanosize structures of ferroelectric thin films
NASA Astrophysics Data System (ADS)
Muralt, Paul
2006-09-01
An overview is given on nucleation phenomena of Pb(Zr ,Ti)O3 (PZT) thin films on Pt(111)-based substrates. Emphasis is given on in situ growth methods, particularly in situ reactive sputtering from three metallic targets. Growth of PZT thin films is discussed from the point of view of the PbOx-TiO2 phase diagram, PbO vapor pressure, and classical nucleation theory. The role of thin TiO2 affinity layers and spots is explained in the frame of this theory. Activation energies for desorption and chemisorption are adapted to comply with the fact that nucleation rates on TiO2 are much larger than the ones on bare Pt(111). The model reproduces well the PbO surface flux from bare Pt(111) to the affinity spots in the case of PbTiO3 nucleation and the reversed tendency in the case of PZT 40/60 nucleation, explaining experimental observations. The critical size of nuclei was calculated to contain 8-10unit cells for PbTiO3/Pt nucleation and 14-17 for PZT/Pt nucleation.
NASA Astrophysics Data System (ADS)
Kingon, Angus I.; Srinivasan, Sudarsan
2005-03-01
Replacement of noble metal electrodes by base metals significantly lowers the cost of ferroelectric, piezoelectric and dielectric devices. Here, we demonstrate that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3, or PZT) thin films directly on base metal copper foils. We explore the impact of the oxygen partial pressure during processing, and demonstrate that high-quality films and interfaces can be achieved through control of the oxygen partial pressure within a narrow window predicted by thermodynamic stability considerations. This demonstration has broad implications, opening up the possibility of the use of low-cost, high-conductivity copper electrodes for a range of Pb-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors and sensors; multilayer PZT piezoelectric stacks; and multilayer dielectric and electrostrictive devices based on lead magnesium niobate-lead titanate. We also point out that the capacitors do not fatigue on repeated switching, unlike those with Pt noble metal electrodes. Instead, they appear to be fatigue-resistant, like capacitors with oxide electrodes. This may have implications for ferroelectric non-volatile memories.
Huang, Zhaorong; Zhang, Qi; Corkovic, Silvana; Dorey, Robert; Whatmore, Roger W
2006-12-01
Chemical solution deposition (CSD) techniques were used to prepare lead zirconate (Zr) titanate (Ti) (PZT) thin films with Zr/Ti ratios of 30/70 and 52/48. Usually CSD processing is restricted to making crack-free, single-layer films of 70-nm thick, but modifications to the sol-gel process have permitted the fabrication of dense, crack-free, single layers up to 200 to 300 nm thick, which can be built-up into layers up to 3-microm thick. Thicker PZT films (> 2-microm single layer) can be produced by using a composite sol-gel/ceramic process. Knowledge of the electroactive properties of these materials is essential for modeling and design of novel micro-electromechanical systems (MEMS) devices, but accurate measurement of these properties is by no means straightforward. A novel, double-beam, common-path laser interferometer has been developed to measure the longitudinal (d33) piezoelectric coefficient in films; the results were compared with the values obtained by Berlin-court and laser scanning vibrometer methods. It was found that, for thin-film samples, the d(33,f) values obtained from the Berlincourt method are usually larger: than those obtained from the interferometer and the vibrometer methods; the reasons for this are discussed.
NASA Astrophysics Data System (ADS)
Sreelalitha, K.; Thyagarajan, K.
2016-01-01
In the present study, we investigate the structural, morphological and magnetic properties of sol-gel spin-coated PZT thin films on alumina substrate. The morphotropic phase boundary (MPB) of PZT [Pb (Zr1-xTix)03] between the tetragonal and rhombohedral phases occurs at the Zr/Ti ratio of 52/48. At the MPB the physical properties of PZT are of far-reaching importance due to their possible crystalline phases. In this study Pb(Zr0.52Ti0.48)03 sols are prepared at room temperature and at 125 °C. The gels are coated onto alumina substrate using a spin-coating unit as two and three layers. The structural studies using XRD confirm the perovskite phase formation at an annealing temperature of 660 °C for both films. The structural parameter grain size, dislocation density, lattice parameters and strain were dependent on the sol temperature. The SEM morphology of the samples represents well-developed dense grain structure and thickness in micrometer ranges. The VSM analysis shows diamagnetic and ferromagnetic hysteresis loop. The ferromagnetism at low fields in PZT films is confirmed by studying the magnetic properties of powder made of the same gel. The effect of heat treatment on the gel preparation is observed on structural, morphological and magnetic properties of PZT thin films. The ferromagnetism in PZT can be attributed to oxygen vacancies. The squareness ratio of the films shows the application of the films as a high-density recording medium.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cui, Jizhai; Liang, Cheng-Yen; Sepulveda, Abdon
Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroicmore » devices.« less
NASA Astrophysics Data System (ADS)
Fu, Desheng; Suzuki, Hisao; Ogawa, Takeshi; Ishikawa, Kenji
2002-05-01
The piezoelectric responses of c-axis-oriented Pb(Zr0.53Ti0.47)O3 (PZT) thin films have been studied by measuring the stress-induced charge with an accurate charge integrator. These measurements reveal that the c-axis-oriented PZT films have high values of d33, which are several times those of ceramic materials. The intrinsic d33 values of poled films are about 680 and 800 pC/N for the c-axis-oriented films on Si and MgO single-crystal substrates, respectively. It shows that the thin-film deposition technique opens an approach for exploring the potential superior properties of PZT near the morphotropic phase boundary.
Optimizing Pt/TiO2 templates for textured PZT growth and MEMS devices
NASA Astrophysics Data System (ADS)
Potrepka, Daniel; Fox, Glenn; Sanchez, Luz; Polcawich, Ronald
2013-03-01
Crystallographic texture of lead zirconate titanate (PZT) thin films strongly influences piezoelectric properties used in MEMS applications. Textured growth can be achieved by relying on crystal growth habit and can also be initiated by the use of a seed-layer heteroepitaxial template. Template choice and the process used to form it determine structural quality, ultimately influencing performance and reliability of MEMS PZT devices such as switches, filters, and actuators. This study focuses on how 111-textured PZT is generated by a combination of crystal habit and templating mechanisms that occur in the PZT/bottom-electrode stack. The sequence begins with 0001-textured Ti deposited on thermally grown SiO2 on a Si wafer. The Ti is converted to 100-textured TiO2 (rutile) through thermal oxidation. Then 111-textured Pt can be grown to act as a template for 111-textured PZT. Ti and Pt are deposited by DC magnetron sputtering. TiO2 and Pt film textures and structure were optimized by variation of sputtering deposition times, temperatures and power levels, and post-deposition anneal conditions. The relationship between Ti, TiO2, and Pt texture and their impact on PZT growth will be presented. Also affiliated with U.S. Army Research Lab, Adelphi, MD 20783, USA
Estimation of steady-state leakage current in polycrystalline PZT thin films
NASA Astrophysics Data System (ADS)
Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander
2016-09-01
Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.
Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain
NASA Astrophysics Data System (ADS)
Lee, Hyeon Jun; Guo, Er-Jia; Kwak, Jeong Hun; Hwang, Seung Hyun; Dörr, Kathrin; Lee, Jun Hee; Young Jo, Ji
2017-01-01
The tetragonality (c/a) of a PbZr0.2Ti0.8O3 (PZT) thin film on La0.7Sr0.3MnO3/ 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.
High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures
NASA Technical Reports Server (NTRS)
Neurgaonkar, R. R.; Nelson, J. G.
1999-01-01
The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.
High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures
NASA Technical Reports Server (NTRS)
Neurgaonkar, R. R.; Nelson, J. G.
1999-01-01
The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.
Very high frequency (beyond 100 MHz) PZT kerfless linear arrays.
Wu, Da-Wei; Zhou, Qifa; Geng, Xuecang; Liu, Chang-Geng; Djuth, Frank; Shung, K Kirk
2009-10-01
This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-microm PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-microm PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss).
Very High Frequency (Beyond 100 MHz) PZT Kerfless Linear Arrays
Wu, Da-Wei; Zhou, Qifa; Geng, Xuecang; Liu, Chang-Geng; Djuth, Frank; Shung, K. Kirk
2010-01-01
This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-µm PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-µm PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss). PMID:19942516
NASA Astrophysics Data System (ADS)
Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.
2014-04-01
The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.
NASA Astrophysics Data System (ADS)
Hu, Tao; Wang, Zongrong; Ma, Ning; Du, Piyi
2017-12-01
PbZr0.52Ti0.48O3 thin films containing hexagonal and cubic Ag nanoparticles (Ag NPs) of various sizes were prepared using the sol-gel technique. During the aging process, Ag ions were photo-reduced to form hexagonal Ag NPs. These NPs were uniform in size, and their uniformity was maintained in the thin films during the heat treatment process. Both the total volume and average size of the hexagonal Ag NPs increased with an increasing Ag ion concentration from 0.02 to 0.08 mol l-1. Meanwhile, the remaining Ag ions were reduced to form unstable Ag-Pb alloy particles with Pb ions during the early heating stage. During subsequent heat treatment, these alloys decomposed to form cubic Ag NPs in the thin films. The absorption range of the thin films, quantified as the full width at half maximum in the ultraviolet-visible absorption spectrum, expanded from 6.3 × 1013 Hz (390-425 nm) to 8.4 × 1013 Hz (383-429 nm) as the Ag NPs/PZT ratio increased from 0.2 to 0.8. This work provides an effective way to broaden the absorption range and enhance the optical properties of such films.
Design, Fabrication, Characterization and Modeling of Integrated Functional Materials
2012-10-01
films. The successful optimization of the PZT thin film growth parameters allowed us to set the stage for doping PZT with rare earth elements...Lanthanum (La)-doped PZT (PLZT) (where Pb2+ is substituted by La3+), has a dramatic enhancement in the piezoelectric properties. There have been only a...few recent reports on the growth of La- PZT films. However, most of the reports were based on chemical routes such as metal organic decomposition
Enhanced Piezoelectric Response in HybridPerovskite via Interfacing with Ferroelectric Pb(Zr,Ti)O3
NASA Astrophysics Data System (ADS)
Song, Jingfeng; Xiao, Zhiyong; Chen, Bo; Prockish, Spencer; Chen, Xuegang; Wang, Dong; Huang, Jinsong; Hong, Xia
In this work, we have carried out a comprehensive study of the piezoelectric properties of polycrystalline hybrid perovskite CH3NH3PbI3 (MAPbI3) thin films on two types of substrates. We spin coated 20-100 nm MAPbI3 thin films on gold and ferroelectric Pb(Zr,Ti)O3 (PZT), and characterized their piezoelectric coefficient d33 using piezoresponse force microscopy (PFM). The MAPbI3 thin films on gold showed a d33 of 0.4 pm/V. The epitaxial PZT films ( 50 nm) were deposited on (La,Sr)MnO3/SrTiO3 substrates, with polarization uniformly oriented in the up direction. For MAPbI3 films on PZT, there are regions showing clear PFM phase response, suggesting that MAPbI3 is polar with out-of-plane polarization. The PFM amplitude image of MAPbI3 indicated the existence of both constructive and destructive piezoresponse with that of PZT. The extracted d33is4 pm/V, 10-fold higher than that on gold. The enhanced piezoresponse is attributed to the dipole-dipole interaction between MAPbI3 and PZT. Our study points to an effective route to engineer the piezoelectric properties MAPbI3 for applications such as mechanical actuators and energy harvesting.
Sputtered highly oriented PZT thin films for MEMS applications
NASA Astrophysics Data System (ADS)
Kalpat, Sriram S.
Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate orientation that could improve the MEMS device performance. Potential application of these devices is as battery operated disposable drug delivery systems. This work will also investigate the fabrication of a flexural plate wave based microfluidic device using the PZT thin film of appropriate orientation that would enhance the device performance. (Abstract shortened by UMI.)
Controllable piezoelectricity of Pb(Zr 0.2Ti 0.8)O 3 film via in situ misfit strain
Lee, Hyeon Jun; Guo, Er-Jia; Martin Luther Univ. of Halle-Wittenberg, Halle; ...
2017-01-18
In this paper, the tetragonality (c/a) of a PbZr 0.2Ti 0.8O 3 (PZT) thin film on La 0.7Sr 0.3MnO 3/0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d 33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role inmore » determining d 33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.« less
Controllable piezoelectricity of Pb(Zr 0.2Ti 0.8)O 3 film via in situ misfit strain
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Hyeon Jun; Guo, Er-Jia; Martin Luther Univ. of Halle-Wittenberg, Halle
In this paper, the tetragonality (c/a) of a PbZr 0.2Ti 0.8O 3 (PZT) thin film on La 0.7Sr 0.3MnO 3/0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d 33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role inmore » determining d 33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.« less
Dependence of e31,f on polar axis texture for tetragonal Pb(Zrx,Ti1-x)O3 thin films
NASA Astrophysics Data System (ADS)
Yeager, Charles B.; Ehara, Yoshitaka; Oshima, Naoya; Funakubo, Hiroshi; Trolier-McKinstry, Susan
2014-09-01
It was shown by Ouyang et al. [Appl. Phys. Lett. 86, 152901 (2005)] that the piezoelectric e31,f coefficient is largest parallel to the spontaneous polarization in tetragonal PbZrxTi1-xO3 (PZT) films. However, the expected piezoelectric data are typically calculated from phenomenological constants derived from data on ceramic PZT. In this work, the dependence of e31,f on c-axis texture fraction, f001, for {001}PZT thin films was measured by growing films with systematically changed f001 using CaF2, MgO, SrTiO3, and Si substrates. An approximately linear increase in e31,f with f001 was observed for compositions up to 43 mol. % Zr, and 100% c-domain properties were extrapolated. It was demonstrated that c-axis PZT films can achieve e31,f exceeding -12 C/m2 for many tetragonal compositions. The energy harvesting figure of merit, e31,f2/ɛr, for c-axis PZT films surpassed 0.8 C2/m4. This is larger than the figure of merit of gradient-free PZT films grown on Si substrates by a factor of four.
Wang, Tengxing; Jiang, Wei; Divan, Ralu; ...
2017-08-03
A Permalloy (Py) thin film enabled tunable 3-D solenoid inductor is designed and fabricated. The special configuration of magnetic core is discussed and by selectively patterning Py thin film, the proposed tunable inductor can work at frequency up to several GHz range. The inductance of the solenoid inductor can be electrically tuned by dc current and the tunability is above 10%. Utilizing the implemented Py enabled tunable solenoid inductor and Lead Zirconate Titanate (PZT) thin film enabled metal-insulator-metal (MIM) capacitor, a compact fully electrically tunable lumped elements phase shifter is achieved. The tunable phase shifter has both inductive and capacitivemore » tunability and the dual tunability significantly improves the tuning range and design flexibility. Moreover, the dual tunability is able to retain the equivalent characteristic impedance of the device in the process of the phase being tuned. Here, the phase of the device can be tuned by fully electrical methods and when dc current and dc voltage are provided, the length normalized phase tunability is up to 210°/cm« less
Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering
NASA Astrophysics Data System (ADS)
Wang, Chun; Kryder, Mark H.
2009-09-01
Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.
NASA Astrophysics Data System (ADS)
Jung, Joontaek; Annapureddy, Venkateswarlu; Hwang, Geon-Tae; Song, Youngsup; Lee, Wonjun; Kang, Woojin; Ryu, Jungho; Choi, Hongsoo
2017-05-01
A piezoelectric micromachined ultrasonic transducer (pMUT) is an ideal device for portable medical diagnosis systems, intravascular ultrasound systems, and ultrasonic cameras because of its favorable characteristics including small size, acoustic impedance matching with the body, low power consumption, and simple integration with the systems. Despite these advantages, practical applications are limited because of insufficient acoustic pressure of the pMUT caused by the thin active piezoelectric layer. Here, we report the fabrication of a thick piezoelectric Pb(Zr,Ti)O3 (PZT) film-based pMUT device having high deflection at low driving voltage using the granule spraying in vacuum (GSV) process. Pre-patterned high-density thick (exceeding 8 μm) PZT films were grown on 6-inch-diameter Si/SiO2/Ti/Pt silicon-on-insulator wafers at room temperature at a high deposition rate of ˜5 μm min-1. The fabrication process using the proposed GSV process was simple and fast, and the deflection of the pMUT exhibited a high value of 0.8 μm.
Optimizing a spectral element for modeling PZT-induced Lamb wave propagation in thin plates
NASA Astrophysics Data System (ADS)
Ha, Sungwon; Chang, Fu-Kuo
2010-01-01
Use of surface-mounted piezoelectric actuators to generate acoustic ultrasound has been demonstrated to be a key component of built-in nondestructive detection evaluation (NDE) techniques, which can automatically inspect and interrogate damage in hard-to-access areas in real time without disassembly of the structural parts. However, piezoelectric actuators create complex waves, which propagate through the structure. Having the capability to model piezoelectric actuator-induced wave propagation and understanding its physics are essential to developing advanced algorithms for the built-in NDE techniques. Therefore, the objective of this investigation was to develop an efficient hybrid spectral element for modeling piezoelectric actuator-induced high-frequency wave propagation in thin plates. With the hybrid element we take advantage of both a high-order spectral element in the in-plane direction and a linear finite element in the thickness direction in order to efficiently analyze Lamb wave propagation in thin plates. The hybrid spectral element out-performs other elements in terms of leading to significantly faster computation and smaller memory requirements. Use of the hybrid spectral element is proven to be an efficient technique for modeling PZT-induced (PZT: lead zirconate titanate) wave propagation in thin plates. The element enables fundamental understanding of PZT-induced wave propagation.
{001} Oriented piezoelectric films prepared by chemical solution deposition on Ni foils
NASA Astrophysics Data System (ADS)
Yeo, Hong Goo; Trolier-McKinstry, Susan
2014-07-01
Flexible metal foil substrates are useful in some microelectromechanical systems applications including wearable piezoelectric sensors or energy harvesters based on Pb(Zr,Ti)O3 (PZT) thin films. Full utilization of the potential of piezoelectrics on metal foils requires control of the film crystallographic texture. In this study, {001} oriented PZT thin films were grown by chemical solution deposition (CSD) on Ni foil and Si substrates. Ni foils were passivated using HfO2 grown by atomic layer deposition in order to suppress substrate oxidation during subsequent thermal treatment. To obtain the desired orientation of PZT film, strongly (100) oriented LaNiO3 films were integrated by CSD on the HfO2 coated substrates. A high level of {001} LaNiO3 and PZT film orientation were confirmed by X-ray diffraction patterns. Before poling, the low field dielectric permittivity and loss tangents of (001) oriented PZT films on Ni are near 780 and 0.04 at 1 kHz; the permittivity drops significantly on poling due to in-plane to out-of-plane domain switching. (001) oriented PZT film on Ni displayed a well-saturated hysteresis loop with a large remanent polarization ˜36 μC/cm2, while (100) oriented PZT on Si showed slanted P-E hysteresis loops with much lower remanent polarizations. The |e31,f| piezoelectric coefficient was around 10.6 C/m2 for hot-poled (001) oriented PZT film on Ni.
NASA Astrophysics Data System (ADS)
Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho
2017-09-01
In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.
Kempa, M; Kamba, S; Savinov, M; Maryško, M; Frait, Z; Vaněk, P; Tomczyk, M; Vilarinho, P M
2010-11-10
We investigated ceramics samples of solid solutions of [PbFe(2/3)W(1/3)O(3)](x)-[PbZr(0.53)Ti(0.47)O(3)](1 - x) (PFW(x)-PZT(1 - x), x = 0.2 and 0.3) by means of broad-band dielectric spectroscopy, differential scanning calorimetry and SQUID magnetometry. We did not confirm the observations of Kumar et al (2009 J. Phys.: Condens. Matter 21 382204), who reported on reversible suppression of ferroelectric polarization in polycrystalline PFW(x)-PZT(1 - x) thin films for magnetic fields above 0.5 T. We did not observe any change of ferroelectric polarization with external magnetic fields up to 3.2 T. Pirc et al (2009 Phys. Rev. B 79 214114) developed a theory explaining the reported large magnetoelectric effect in PFW(x)-PZT(1 - x), taking into account relaxor magnetic and relaxor ferroelectric properties of the system. Our data revealed classical ferroelectric properties below 525 K and 485 K in samples with x = 0.2 and 0.3, respectively. Moreover, paramagnetic behavior was observed down to 4.5 K instead of previously reported relaxor magnetic behavior. It seems that the reported switching-off of ferroelectric polarization in PFW(x)-PZT(1 - x) thin films is not an intrinsic property, but probably an effect of electrodes, interlayers, grain boundaries or second phases presented in polycrystalline thin films.
NASA Astrophysics Data System (ADS)
Zhou, Yunxia; Zhu, Jun; Liu, Xingpeng; Wu, Zhipeng
Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) 〈100〉 PZT//(002) 〈100〉 STO//(001) 〈110〉 GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45∘ in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5G (100mW/cm2) illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.
NASA Astrophysics Data System (ADS)
Cornelius, T. W.; Mocuta, C.; Escoubas, S.; Merabet, A.; Texier, M.; Lima, E. C.; Araujo, E. B.; Kholkin, A. L.; Thomas, O.
2017-10-01
The compositional dependence of the piezoelectric properties of self-polarized PbZr1-xTixO3 (PZT) thin films deposited on Pt/TiO2/SiO2/Si substrates (x = 0.47, 0.49 and 0.50) was investigated by in situ synchrotron X-ray diffraction and electrical measurements. The latter evidenced an imprint effect in the studied PZT films, which is pronounced for films with the composition of x = 0.50 and tends to disappear for x = 0.47. These findings were confirmed by in situ X-ray diffraction along the crystalline [100] and [110] directions of the films with different compositions revealing asymmetric butterfly loops of the piezoelectric strain as a function of the electric field; the asymmetry is more pronounced for the PZT film with a composition of x = 0.50, thus indicating a higher built-in electric field. The enhancement of the dielectric permittivity and the effective piezoelectric coefficient at compositions around the morphotropic phase boundary were interpreted in terms of the polarization rotation mechanism and the monoclinic phase in the studied PZT thin films.
PZT piezoelectric films on glass for Gen-X imaging
NASA Astrophysics Data System (ADS)
Wilke, Rudeger H. T.; Trolier-McKinstry, Susan; Reid, Paul B.; Schwartz, Daniel A.
2010-09-01
The proposed adaptive optics system for the Gen-X telescope uses piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. The low softening transition of the glass substrates imposes several processing challenges that require the development of new approaches to deposit high quality PZT thin films. Synthesis and optimization of chemical solution deposited 1 μm thick films of PbZr0.52Ti0.48O3 on small area (1 in2) and large area (16 in2) Pt/Ti/glass substrates has been performed. In order to avoid warping of the glass at temperatures typically used to crystallize PZT films ({700°C), a lower temperature, two-step crystallization process was employed. An {80 nm thick seed layer of PbZr0.30Ti0.70O3 was deposited to promote the growth of the perovskite phase. After the deposition of the seed layer, the films were annealed in a rapid thermal annealing (RTA) furnace at 550°C for 3 minutes to nucleate the perovskite phase. This was followed by isothermal annealing at 550°C for 1 hour to complete crystallization. For the subsequent PbZr0.52Ti0.48O3 layers, the same RTA protocol was performed, with the isothermal crystallization implemented following the deposition of three PbZr0.52Ti0.48O3 spin-coated layers. Over the frequency range of 1 kHz to 100 kHz, films exhibit relative permittivity values near 800 with loss tangents below 0.07. Hysteresis loops show low levels of imprint with coercive fields of 40-50 kV/cm in the forward direction and 50-70 kV/cm in the reverse direction. The remanent polarization varied from 25-35 μC/cm2 and e31,f values were approximately -5.0 C/m2. In scaling up the growth procedure to large area films, where warping becomes more pronounced due to the increased size of the substrate, the pyrolysis and crystallization conditions were performed in a box furnace to improve the temperature uniformity. By depositing films on both sides of the glass substrate, the tensile stresses are balanced, providing a sufficiently flat surface to continue PZT deposition. The properties of the large area film are comparable to those obtained on small substrates. While sol-gel processing is a viable approach to the deposition of high quality PZT thin films on glass substrates, preliminary results using RF magnetron sputter deposition demonstrate comparable properties with a significantly simpler process that offers a superior route for large scale production.
Control of mechanical response of freestanding PbZr0.52Ti0.48O3 films through texture
NASA Astrophysics Data System (ADS)
Das, Debashish; Sanchez, Luz; Martin, Joel; Power, Brian; Isaacson, Steven; Polcawich, Ronald G.; Chasiotis, Ioannis
2016-09-01
The texture of piezoelectric lead zirconate titanate (PZT) thin films plays a key role in their mechanical response and linearity in the stress vs. strain behavior. The open circuit mechanical properties of PZT films with controlled texture varying from 100% (001) to 100% (111) were quantified with the aid of direct strain measurements from freestanding thin film specimens. The texture was tuned using a highly {111}-textured Pt substrate and excess-Pb in the PbTiO3 seed layer. The mechanical and ferroelastic properties of 500 nm thick PZT (52/48) films were found to be strongly dependent on grain orientation: the lowest elastic modulus of 90 ± 2 GPa corresponded to pure (001) texture, and its value increased linearly with the percentage of (111) texture reaching 122 ± 3 GPa for pure (111) texture. These elastic modulus values were between those computed for transversely isotropic textured PZT films by using the soft and hard bulk PZT compliance coefficients. Pure (001) texture exhibited maximum non-linearity and ferroelastic domain switching, contrary to pure (111) texture that exhibited more linearity and the least amount of switching. A micromechanics model was employed to calculate the strain due to domain switching. The model fitted well the non-linearities in the experimental stress-strain curves of (001) and (111) textured PZT films, predicting 17% and 10% of switched 90° domains that initially were favorably aligned with the applied stress in (001) and (111) textured PZT films, respectively.
2012-12-14
PZT ceramic plate [40]. Since then Lamb wave devices utilizing the lowest-order antisymmetric (A0) mode propagation in ZnO thin plate were widely...Million Pt Platinum PVDF Polyvinylidene Flouride PZT Lead Zirconium Titanate Q Quality Factor R Resistor RIE Reactive Ion Etching Rm Motional...GaAs), silicon carbide (SiC), langasite (LGS), lead zirconium titanate ( PZT ), and polyvinylidene flouride (PVDF). Each piezoelectric material has
Koh, Kah How; Kobayashi, Takeshi; Lee, Chengkuo
2011-07-18
A novel dynamic excitation of an S-shaped PZT piezoelectric actuator, which is conceptualized by having two superimposed AC voltages, is characterized in this paper through the evaluation of the 2-D scanning characteristics of an integrated silicon micromirror. The device is micromachined from a SOI wafer with a 5 μm thick Si device layer and multilayers of Pt/Ti/PZT//Pt/Ti deposited as electrode and actuation materials. A large mirror (1.65 mm x 2mm) and an S-shaped PZT actuator are formed after the backside release process. Three modes of operation are investigated: bending, torsional and mixed. The resonant frequencies obtained for bending and torsional modes are 27Hz and 70Hz respectively. The maximum measured optical deflection angles obtained at 3Vpp are ± 38.9° and ± 2.1° respectively for bending and torsional modes. Various 2-D Lissajous patterns are demonstrated by superimposing two ac sinusoidal electrical signals of different frequencies (27 Hz and 70 Hz) into one signal to be used to actuate the mirror.
Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher; ...
2017-05-23
This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher
This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less
NASA Astrophysics Data System (ADS)
Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang
2012-03-01
We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.
NASA Astrophysics Data System (ADS)
Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.
2016-03-01
Ferroelectric capacitors made by lead zirconate titanate (PZT) thin films and iridium electrodes are fabricated on three-dimensional structures and their properties are investigated. The iridium films are grown by Plasma Enhanced MOCVD at 300°C, while the PZT films are deposited by thermal MOCVD at different process temperatures between 450°C and 550°C. The step coverage and composition uniformity of the PZT films on trench holes and lines are investigated. Phase separation of PZT films has been observed on both 3D and planar structures. No clear dependences of the crystallization and composition of PZT on 3D structure topography have been found. STEM EDX line scans show a uniform Zr/(Zr+Ti) concentration ratio along the 3D profile but the variation of the Pb/(Zr+Ti) concentration ratio is large because of the phase separation. 3D ferroelectric capacitors show good ferroelectric properties but have much higher leakage currents than 2D ferroelectric capacitors. Nevertheless, during cycling tests the degradation of the remnant polarization between 2D and 3D capacitors is similar after 109 switching cycles. In addition, the sidewalls and bottoms of the 3D structures seem to have comparable remnant polarizations with the horizontal top surfaces.
Optical and electro-optic anisotropy of epitaxial PZT thin films
NASA Astrophysics Data System (ADS)
Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang
2015-07-01
Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.
Domain switching of fatigued ferroelectric thin films
NASA Astrophysics Data System (ADS)
Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han
2014-05-01
We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.
NASA Astrophysics Data System (ADS)
Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.
2014-09-01
The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.
PZT Thin Film Piezoelectric Traveling Wave Motor
NASA Technical Reports Server (NTRS)
Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan
1995-01-01
With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.
Local piezoelectric behavior in PZT-based thin films for ultrasound transducers
NASA Astrophysics Data System (ADS)
Griggio, Flavio
Piezoelectric microelectromechanical systems (MEMS) are currently used in inkjet printers and precision resonators; numerous additional applications are being investigated for sensors, low-voltage actuators, and transducers. This work was aimed at improving piezoelectric MEMS by taking two approaches: 1) identifying factors affecting the piezoelectric response of ferroelectric thin films and 2) demonstrating integration of these films into a high frequency array transducer. It was found that there are several key factors influencing the piezoelectric response of thin films for a given material composition. First, large grain size improves the piezoelectric response. This was demonstrated using chemical solution deposited lead nickel niobate -- lead zirconate titanate (0.3)Pb(Ni 0.33Nb0.67)O3 - (0.7)Pb(Zr0.45Ti 0.55O3), (PNN-PZT) ferroelectric thin films. It was shown that this composition allows greater microstructural control than does PZT. Dielectric permittivities ranging from 1350 to 1520 and a transverse piezoelectric coefficient e31,f as high as -- 9.7 C/m 2 were observed for films of about 0.25 mum in thickness. The permittivity and piezoelectric response as well as extrinsic contributions to the dielectric constant increased by 14 and 12 % respectively for samples with grain sizes ranging from 110 to 270 nm. A second factor influencing the piezoelectric response is film composition with respect to the morphotropic phase boundary (MPB). The composition dependence of the dielectric and piezoelectric nonlinearities was characterized in epitaxially grown (0.3)Pb(Ni0.33Nb0.67)O3-(0.7)Pb(Zr xTi1-xO3) thin films deposited on SrTiO 3 to minimize the influence of large-angle grain boundaries. Tetragonal, MPB and rhombohedral films were prepared by changing the Zr/Ti ratio. The largest dielectric and piezoelectric nonlinearities were observed for the rhombohedral sample; this resulted from a higher domain wall mobility due to a smaller ferroelectric distortion and superior crystal quality. Thirdly, changes in the mechanical boundary conditions experienced by a ferroelectric thin film were found to influence both the properties and the length scale for correlated motion of domain walls. Microfabrication was employed to release the PZT films from the Si substrate. Nonlinear piezoelectric maps, by band excitation piezoforce microscopy, showed formation of clusters of higher nonlinear activities of similar size for clamped PZT films with different microstructures. However PZT films that had been released from the Si substrate showed a distinct increase in the correlation length associated with coupled domain wall motion, suggesting that the local mechanical boundary conditions, more than microstructure or composition govern the domain wall dynamics. Release of both the local and the global stress states in films produced dielectric nonlinearities comparable to those of bulk ceramics. The second research direction was targeted at demonstrating the functionality of a one dimensional transducer array. A diaphragm geometry was used for the transducer arrays in order to benefit from the unimorph-type displacement of the PZT-SiO2 layers. For this purpose, the PZT and remaining films in the stack were patterned using reactive ion etching and partially released from the underlying silicon substrate by XeF2 etching from the top. Admittance measurements on the fabricated structures showed resonance frequencies at ˜40 MHz for a 80 mum diameter-wide diaphragms with a PZT thickness of 1.74 mum. In-water transmit and receive functionalities were demonstrated. A bandwidth on receive of 80 % centered at 40 MHz was determined during pitch-mode tests.
Enhanced electrical properties in bilayered ferroelectric thin films
NASA Astrophysics Data System (ADS)
Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie
2013-03-01
Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.
2008-12-01
n-propoxide and titanium isopropoxide , were measured with a graduated auto pipet and combined with 45 mL of 2-MOE in a 125 mL flask. The solution...nitrogen (N2). This anneal procedure was used to remove trapped hydrogen from the thin film. Following the anneal, a bi-layer of titanium (Ti) and...dioxide Ti titanium 10 NO. OF COPIES ORGANIZATION 1 ADMNSTR ELEC DEFNS TECHL INFO CTR ATTN DTIC OCP 8725 JOHN J KINGMAN RD STE
NASA Astrophysics Data System (ADS)
Placeres Jiménez, Rolando; Pedro Rino, José; Marino Gonçalves, André; Antonio Eiras, José
2013-09-01
Ferroelectric domain walls are modeled as rigid bodies moving under the action of a potential field in a dissipative medium. Assuming that the dielectric permittivity follows the dependence ɛ '∝1/(α+βE2), it obtained the exact expression for the effective potential. Simulations of polarization current correctly predict a power law. Such results could be valuable in the study of domain wall kinetic and ultrafast polarization processes. The model is extended to poled samples allowing the study of nonlinear dielectric permittivity under subswitching electric fields. Experimental nonlinear data from PZT 20/80 thin films and Fe+3 doped PZT 40/60 ceramic are reproduced.
Schick, D; Bojahr, A; Herzog, M; Gaal, P; Vrejoiu, I; Bargheer, M
2013-03-01
We investigate coherent phonon propagation in a thin film of ferroelectric PbZr(0.2)Ti(0.8)O(3) (PZT) by ultrafast x-ray diffraction experiments, which are analyzed as time-resolved reciprocal space mapping in order to observe the in- and out-of-plane structural dynamics, simultaneously. The mosaic structure of the PZT leads to a coupling of the excited out-of-plane expansion to in-plane lattice dynamics on a picosecond time scale, which is not observed for out-of-plane compression.
Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films
NASA Astrophysics Data System (ADS)
Lee, J.; Esayan, S.; Prohaska, J.; Safari, A.
1994-01-01
The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (˜hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.
Piezoelectric micromachined ultrasonic transducers based on PZT thin films.
Muralt, Paul; Ledermann, Nicolas; Baborowski, Jacek; Barzegar, Abdolghaffar; Gentil, Sandrine; Belgacem, Brahim; Petitgrand, Sylvain; Bosseboeuf, Alain; Setter, Nava
2005-12-01
This paper describes fabrication and characterization results of piezoelectric micromachined ultrasonic transducers (pMUTs) based on 2-microm-thick Pb(Zr0.53Ti0.47O3) (PZT) thin films. The applied structures are circular plates held at four bridges, thus partially unclamped. A simple analytical model for the fully clamped structure is used as a reference to optimize design parameters such as thickness relations and electrodes, and to provide approximate predictions for coupling coefficients related to previously determined thin film properties. The best coupling coefficient was achieved with a 270-microm plate and amounted to kappa2 = 5.3%. This value compares well with the calculated value based on measured small signal dielectric (epsilon = 1050) and piezoelectric (e3l,f = 15 Cm(-2)) properties of the PZT thin film at 100 kV/cm dc bias. The resonances show relatively large Q-factors, which can be partially explained by the small diameters as compared to the sound wavelength in air and in the test liquid (Fluorinert 77). A transmit-receive experiment with two quasi-identical pMUTs was performed showing significant signal transmission up to a distance of 20 cm in air and 2 cm in the test liquid.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr; Rémiens, D.; Sama, N.
2014-12-28
350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation timemore » as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.« less
NASA Astrophysics Data System (ADS)
Murari, Nishit M.; Hong, Seungbum; Lee, Ho Nyung; Katiyar, Ram. S.
2011-08-01
Here, we present a direct observation of fatigue phenomena in epitaxially grown Pb(Zr0.2Ti0.8)O3 (PZT) thin films using second harmonic piezoresponse force microscopy (SH-PFM). We observed strong correlation between the SH-PFM amplitude and phase signals with the remnant piezoresponse at different switching cycles. The SH-PFM results indicate that the average fraction of switchable domains decreases globally and the phase delays of polarization switching differ locally. In addition, we found that the fatigue developed uniformly over the whole area without developing region-by-region suppression of switchable polarization as in polycrystalline PZT thin films.
Micro-fabricated flexible PZT cantilever using d33 mode for energy harvesting
NASA Astrophysics Data System (ADS)
Cho, Hyunok; Park, Jongcheol; Park, Jae Yeong
2017-12-01
This paper presents a micro-fabricated flexible and curled PZT [Pb(Zr0.52Ti0.48)O3] cantilever using d33 piezoelectric mode for vibration based energy harvesting applications. The proposed cantilever based energy harvester consists of polyimide, PZT thin film, and inter-digitated IrOx electrodes. The flexible cantilever was formed using bulk-micromachining on a silicon wafer to integrate it with ICs. The d33 piezoelectric mode was applied to achieve a large output voltage by using inter-digitated electrodes, and the PZT thin film on polyimide layer has a remnant polarization and coercive filed of approximately 2 P r = 47.9 μC/cm2 and 2 E c = 78.8 kV/cm, respectively. The relative dielectric constant was 900. The fabricated micro-electromechanical systems energy harvester generated output voltages of 1.2 V and output power of 117 nW at its optimal resistive load of 6.6 MΩ from its resonant frequency of 97.8 Hz with an acceleration of 5 m/s2.
Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes
NASA Astrophysics Data System (ADS)
Ahmed, Moinuddin; Butler, Donald P.
2015-07-01
Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.
In situ 2D diffraction as a tool to characterize ferroelectric and piezoelectric thin films
NASA Astrophysics Data System (ADS)
Khamidy, N. I.; Kovacova, V.; Bernasconi, A.; Le Rhun, G.; Vaxelaire, N.
2017-08-01
In this paper the application of 2D x-ray diffraction (XRD2) as a technique to characterize in situ during electrical cycling the properties of a ferroelectric and piezoelectric thin film is discussed. XRD2 is one type of XRD on which a 2D detector is used instead of a point detector. This technique enables simultaneous recording of many sample information in a much shorter time compared to conventional XRD. The discussion is focused especially on the data processing technique of the huge data acquired. The methodology to calculate an effective piezoelectric coefficient, analyze the phase and texture, and estimate the domain size and shape is described in this paper. This methodology is then applied to a lead zirconate titanate (PZT) thin film at the morphotropic phase boundary (MPB) composition (i.e. Pb[Zr0.52Ti0.48]O3) with a preferred orientation of (1 0 0). The in situ XRD2 characterization was conducted in the European synchrotron radiation facility (ESRF) in Grenoble, France. Since a high-energy beam with vertical resolution as small as 100 nm was used, a cross-sectional scan of the sample was performed over the entire thickness of the film. From these experimental results, a better understanding on the piezoelectricity phenomena in PZT thin film at MPB composition were achieved, providing original feedback between the elaboration processes and functional properties of the film.
Switchable 3-0 magnetoelectric nanocomposite thin film with high coupling.
McDannald, Austin; Ye, Linghan; Cantoni, Claudia; Gollapudi, Sreenivasulu; Srinivasan, Gopalan; Huey, Bryan D; Jain, Menka
2017-03-02
A mixed precursor solution method was used to deposit 3-0 nanocomposite thin films of PbZr 0.52 Ti 0.48 O 3 (PZT) and CoFe 2 O 4 (CFO). The piezoelectric behavior of PZT and magnetostrictive behavior of CFO allow for magnetoelectric (ME) coupling through strain transfer between the respective phases. High ME coupling is desired for many applications including memory devices, magnetic field sensors, and energy harvesters. The spontaneous phase separation in the 3-0 nanocomposite film was observed, with 25 nm CFO particle or nanophases distributed in discrete layers through the thickness of the PZT matrix. Magnetic-force microscopy images of the nanocomposite thin film under opposite magnetic poling conditions revealed in-plane pancake-like regions of higher concentration of the CFO nanoparticles. The constraints on the size and distribution of the CFO nanoparticles created a unique distribution in a PZT matrix and achieved values of ME coupling of 3.07 V cm -1 Oe -1 at a DC bias of 250 Oe and 1 kHz, increasing up to 25.0 V cm -1 Oe -1 at 90 kHz. Piezo-force microscopy was used to investigate the ferroelectric domain structure before and after opposite magnetic poling directions. It was found that in this nanocomposite, the polarization of the ferroelectric domains switched direction as a result of switching the direction of the magnetization by magnetic fields.
Pollak, C; Malic, B; Kosec, M; Javoric, S; Hutter, H
2002-10-01
Chemical solution-deposited thin films of PbZr(0.53)Ti(0.47)O(3)/La(0.5)Sr(0.5)CoO(3) on Pt/TiO(2)/SiO(2)/Si substrates have been investigated by dynamic SIMS. The PbZr(0.53)Ti(0.47)O(3) (PZT) is intended to serve as a ferroelectric layer for microelectronic or microelectromechanical applications; conducting La(0.5)Sr(0.5)CoO(3) (LSCO) is a buffer layer intended to eliminate fatigue effects which usually occur at the Pt/PZT interface. Depth profiles of the main components were obtained and revealed that significant diffusion occurred during the deposition and crystallisation processes. Two types of sample, with different thickness of PZT and different types of poly(vinyl alcohol) (PVA) added to the LSCO precursor, were investigated.
Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors
NASA Astrophysics Data System (ADS)
Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.
1993-07-01
Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.
Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices
NASA Astrophysics Data System (ADS)
Yoon, Sang Hoon
The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic orientation of the films, which is explained by the phase transformation that occurs from amorphous pyrolized film to crystalline film. Sputtered ZnO films do not show a strong dependence on the parameters, possibly indicating a reduced energy barrier for the growth of ZnO film due to plasma energy. Based on an understanding of the relationship between process and thin film structure, the growth mechanism of CSD ZnO is proposed. The devices are fabricated on 4-inch silicon wafers by a microelectronic fabrication method. The fabrication procedure and issues relating to device fabrication are discussed.
Performance of thin-film ferroelectric capacitors for EMC decoupling.
Li, Huadong; Subramanyam, Guru
2008-12-01
This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.
NASA Astrophysics Data System (ADS)
Malic, Barbara; Arcon, Iztok; Kodre, Alojz; Kosec, Marija
2006-09-01
Sols for Pb(Zr0.53Ti0.47)O3 (PZT) thin films were prepared by 2-methoxyethanol route from lead acetate, titanium n-propoxide, and zirconium n-propoxide, the latter either unmodified or modified with acetylacetone or acetic acid in a 2/1 molar ratio and deposited on sapphire (0001). By Zr K-edge extended x-ray absorption fine structure (EXAFS) spectroscopy, the structural changes in the Zr local environment, induced by the addition of the two modifiers, were followed from the synthesis of the PZT sol to the transition to the amorphous film. In the unmodified PZT sol segregation of Zr species occurs from the original dimers present in the Zr propoxide solution in 2-methoxyethanol. The immediate neighborhood of Zr atoms changes markedly at the transition from the sol to the amorphous film: the local structure around Zr atoms is similar to the one found in tetragonal zirconia particles. The modification of Zr propoxide with acetylacetone in 2-methoxyethanol results in Zr monomers. In PZT sol, clustering of Zr species is observed continuing into the amorphous film. By modification with acetic acid the original dimeric structure of the Zr precursor is retained in the PZT sol and further in the amorphous film. Selective modification of Zr propoxide with acetic acid therefore results in a more homogeneous distribution of Zr atoms in the PZT sol and amorphous film than in both as-received and acetylacetone-modified Zr propoxide.
NASA Astrophysics Data System (ADS)
Yi, Zhiran; Yang, Bin; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng
2017-07-01
This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.
NASA Astrophysics Data System (ADS)
Gifford, Kenneth Douglas
Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to ~2times10^ {10} switching cycles), low dc leakage current, and excellent retention are observed in capacitor structures containing polycrystalline PZT (exhibiting dominant (001) and (100) XRD reflections), a Pt-RuO_2 hybrid bottom electrode (Type IA), and an RuO _2 top electrode. These results, and electrical characterization results on capacitors containing co-deposited Pt-RuO_2 hybrid electrodes (Type II), show potential for application of these capacitor structures in NVRAM and DRAM memory devices.
Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots
NASA Astrophysics Data System (ADS)
Paik, Young Hun
As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.
Low Voltage MEMS Digital Loudspeaker Array Based on Thin-film PZT Actuators
NASA Astrophysics Data System (ADS)
Fanget, S.; Casset, F.; Dejaeger, R.; Maire, F.; Desloges, B.; Deutzer, J.; Morisson, R.; Bohard, Y.; Laroche, B.; Escato, J.; Leclere, Q.
This paper reports on the development of a Digital Loudspeaker Array (DLA) solution based on Pb(Zr0.52,Ti0.48)O3 (PZT) thin-film actuated membranes. These membranes called speaklets are arranged in a matrix and operate in a binary manner by emitting short pulses of sound pressure. Using the principle of additivity of pressures in the air, it is possible to reconstruct audible sounds. For the first time, electromechanical and acoustic characterizations are reported on a 256-MEMS-membranes DLA. Sounds audible as far as several meters from the loudspeaker have been generated using low voltage (8 V).
Advanced Communication for Wireless Sensor Networks
2016-08-22
characteristic peaks of the PZT crystallography and the presence of non-desired secondary phases. Regarding the spinel thin film, a new sol gel process...particles with the desired crystallography were obtained. As shown in Figure 21 (left), the particle morphology and size can be seen using TEM...film. The crystallography of the films was characterized at different annealing temperatures in order to determine the crystallization kinetics. It
Characterization of Bi and Fe co-doped PZT capacitors for FeRAM.
Cross, Jeffrey S; Kim, Seung-Hyun; Wada, Satoshi; Chatterjee, Abhijit
2010-08-01
Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C. With this goal in mind, co-doping of thin Pb(Zr 40 ,Ti 60 )O 3 (PZT) films with 1 at.% Bi and 1 at.% Fe was examined in order to enhance the ferroelectric properties as well as characterize the doped material. The XRD patterns of PZT-5% BiFeO 3 (BF) and PZT 140-nm thick films showed (111) orientation on (111) platinized Si wafers and a 30 °C increase in the tetragonal to cubic phase transition temperature, often called the Curie temperature, from 350 to 380 °C with co-doping, indicating that Bi and Fe are substituting into the PZT lattice. Raman spectra revealed decreased band intensity with Bi and Fe co-doping of PZT compared to PZT. Polarization hysteresis loops show similar values of remanent polarization, but square-shaped voltage pulse-measured net polarization values of PZT-BF were higher and showed higher endurance to repeated cycling up to 10 10 cycles. It is proposed that Bi and Fe are both in the +3 oxidation state and substituting into the perovskite A and B sites, respectively. Substitution of Bi and Fe into the PZT lattice likely creates defect dipoles, which increase the net polarization when measured by the short voltage pulse positive-up-negative-down (PUND) method.
Characterization of Bi and Fe co-doped PZT capacitors for FeRAM
Cross, Jeffrey S; Kim, Seung-Hyun; Wada, Satoshi; Chatterjee, Abhijit
2010-01-01
Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C. With this goal in mind, co-doping of thin Pb(Zr40,Ti60)O3 (PZT) films with 1 at.% Bi and 1 at.% Fe was examined in order to enhance the ferroelectric properties as well as characterize the doped material. The XRD patterns of PZT-5% BiFeO3 (BF) and PZT 140-nm thick films showed (111) orientation on (111) platinized Si wafers and a 30 °C increase in the tetragonal to cubic phase transition temperature, often called the Curie temperature, from 350 to 380 °C with co-doping, indicating that Bi and Fe are substituting into the PZT lattice. Raman spectra revealed decreased band intensity with Bi and Fe co-doping of PZT compared to PZT. Polarization hysteresis loops show similar values of remanent polarization, but square-shaped voltage pulse-measured net polarization values of PZT-BF were higher and showed higher endurance to repeated cycling up to 1010 cycles. It is proposed that Bi and Fe are both in the +3 oxidation state and substituting into the perovskite A and B sites, respectively. Substitution of Bi and Fe into the PZT lattice likely creates defect dipoles, which increase the net polarization when measured by the short voltage pulse positive-up-negative-down (PUND) method. PMID:27877349
Ferroelectric Thin Film Development
2003-12-10
under the same processing parameters, are discussed for comparison purposes. Next, 75 ITO and In2O3/ Ga2O3 (IGO) are discussed as transparent top...Once a constant rate of 0.2 Å/s is obtained, a thin (2 nm) Ga2O3 layer is deposited to keep the In2O3 out of direct contact with the PZT. As...the In source is heated until the total rate is 1 Å/s. A 20:80 ratio of Ga2O3 to In2O3 is reported to have a work function close to 5 eV. [62] The
NASA Astrophysics Data System (ADS)
Minemura, Yoshiki; Nagasaka, Kohei; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi
2013-09-01
Nanosheet Ca2Nb3O20 (ns-CN) layers with pseudo-perovskite-type crystal configuration were applied on the surface of polycrystalline metal substrates to achieve preferential crystal orientation of Pb(Zr,Ti)O3 (PZT) films for the purpose of enhanced ferroelectricity comparable to that of epitaxial thin films. PZT films with tetragonal symmetry (Zr/Ti=0.40:0.60) were fabricated by chemical solution deposition (CSD) on ns-CN-buffered Inconel 625 and SUS 316L substrates, while ns-CN was applied on the the substrates by dip-coating. The preferential crystal growth on the ns-CN layer can be achieved by favorable lattice matching between (001)/(100)PZT and (001)ns-CN planes. The degree of (001) orientation was increased for PZT films on ns-CN/Inconel 625 and ns-CN/SUS 316L substrates, whereas randomly-oriented PZT films with a lower degree of (001) orientation were grown on bare and Inconel 625 films. Enhanced remanent polarization of 60 µC/cm2 was confirmed for the PZT films on ns-CN/metal substrates, ascribed to the preferential alignment of the polar [001] axis normal to the substrate surface, although it also suffered from higher coercive field above 500 kV/cm caused by PZT/metal interfacial reaction.
Nanocomposites for Electronic Applications. Volume 1
1993-06-14
for a PZT thin film micro- motor using a rotating flexure wave generated in a PZT film on a silicon oxynitride diaphragm. The rotating wave has been...Solid State Science, The Pennsylvania State University (May 1992). 6. Jayne R. Giniewicz. "An Investigation of the Lead Scandium Tantalate-Lead...Materials and Structures, SPIE, Albuquerque, NM (February 1-4, 1993). 24. G. Harshe, J. P. Dougherty, and R. E. Newnham. "Theoretical Modelling of 3-0/0-3
Reliability of vibration energy harvesters of metal-based PZT thin films
NASA Astrophysics Data System (ADS)
Tsujiura, Y.; Suwa, E.; Kurokawa, F.; Hida, H.; Kanno, I.
2014-11-01
This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s2. However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s2. The transverse piezoelectric coefficient (e31,f) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s2 and 36% at 25 m/s2 if we continue to excite the PVEHs for 30 years.
Evans, Paul R; Zhu, Xinhau; Baxter, Paul; McMillen, Mark; McPhillips, John; Morrison, Finlay D; Scott, James F; Pollard, Robert J; Bowman, Robert M; Gregg, J Marty
2007-05-01
We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.
NASA Astrophysics Data System (ADS)
Wu, Wenbin; Wang, Y.; Pang, G. K. H.; Wong, K. H.; Choy, C. L.
2004-08-01
The effect of lattice-misfit strain on the process-induced imprint behavior in Pb (Zr0.52Ti0.48)O3 (PZT) capacitors with Pt (top), and SrRuO3, La0.7Sr0.3MnO3 or LaNiO3 (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.
2012-05-01
field-programmable gate array (FPGA) uses digital signal processing (DSP) algorithms to decode echo-location information from the backscattered signal ...characterizing and understanding of the physical properties of the BST and PZT thin films. Using microwave reflection spectroscopy, the complex...acoustic data, , would be encoded in the reflected MW signal by means of phase modulation (PM). By using high-Q resonators as the reactive
Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates
NASA Astrophysics Data System (ADS)
Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.
2014-09-01
Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.
NASA Astrophysics Data System (ADS)
Zhu, Minmin; Du, Zehui; Li, Hongling; Chen, Bensong; Jing, Lin; Tay, Roland Ying Jie; Lin, Jinjun; Tsang, Siu Hon; Teo, Edwin Hang Tong
2017-12-01
A series of Pb(Zr1-xTix)O3 multilayer films alternatively stacked by Pb(Zr0.52Ti0.48)O3 and Pb(Zr0.35Ti0.65)O3 layers have been deposited on corning glass by magnetron sputtering. The films demonstrate pure perovskite structure and good crystallinity. A large tetragonality (c/a) of ∼1.061 and a shift of ∼0.08 eV for optical bandgap were investigated at layer engineered films. In addition, these samples exhibited a wild tunable electro-optic behavior from tens to ∼250.2 pm/V, as well as fast switching time of down to a few microseconds. The giant EO coefficient was attribute the strain-polarization coupling effect and also comparable to that of epitaxial (001) single crystal PZT thin films. The combination of high transparency, large EO effect, fast switching time, and huge phase transition temperature in PZT-based thin films show the potential on electro-optics from laser to information telecommunication.
NASA Astrophysics Data System (ADS)
Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef
2014-07-01
We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a < 1.07 grown on SrTiO3 (001) substrates, which results in significant frequency dispersion of the dielectric constant and strong Rayleigh type behavior in those samples. This combined structural-electrical study provides a framework for investigating strain relaxation in thin films and can provide useful insights into the mechanisms of fatigue in ferroelectric materials.
NASA Astrophysics Data System (ADS)
Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.
2016-03-01
Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.
Piezoelectric MEMS: Ferroelectric thin films for MEMS applications
NASA Astrophysics Data System (ADS)
Kanno, Isaku
2018-04-01
In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.
NASA Astrophysics Data System (ADS)
Vaxelaire, N.; Kovacova, V.; Bernasconi, A.; Le Rhun, G.; Alvarez-Murga, M.; Vaughan, G. B. M.; Defay, E.; Gergaud, P.
2016-09-01
A direct quantification of a structural in-depth composition in the lead zirconate titanate Pb(Zr,Ti)O3 thin films of morphotropic composition has been conducted using the newly available X-ray nano-pencil beam (i.e., beam size of 100 nm × 1 μm) diffraction approach. We tested two samples with different Zr/Ti chemical gradients. Here, we demonstrate the presence of a significant microstructural gradient between the rhombohedral and tetragonal phases through PbZrxTi1-xO3 (PZT) films with a 100 nm in-depth resolution. The phase gradient extends over around 350 nm, and it is repeated through the PZT film three times, which corresponds to the number of thermal annealings. Moreover, this microstructural gradient is in agreement with the Zr/Ti chemical gradient observed by the secondary ion mass spectroscopy (SIMS). Indeed, the quantity of tetragonal phases rises in the Ti-rich zones as revealed by SIMS, and the quantity of rhombohedral phases rises in the Zr-rich zones. We also demonstrated a huge difference in the in-depth phase variation between the two tested samples. The gradient free sample still contains 4.7% of phase variation through the film and the amplified gradient contains 9.6% of phase variation through the film. Knowing that the gradient free sample shows better electric and piezoelectric coefficients, one can draw a correlation between the chemical composition, crystallographic homogeneity, and electro-mechanical properties of the film. The more close the film is to the morphotropic composition and the more it is crystallographically homogeneous, the higher the piezoelectric coefficients of the PZT are. Finally, the adequate knowledge of phase variation and its relation to the fabrication technique are crucial for the enhancement of the PZT electro-mechanical properties. Our methodology and findings open up new perspectives in establishing a relevant quantitative feedback to reach an ultimate electro-mechanical coupling in the sol-gel PZT thin films.
NASA Astrophysics Data System (ADS)
Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.
2010-05-01
Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.
A large-scan-angle piezoelectric MEMS optical scanner actuated by a Nb-doped PZT thin film
NASA Astrophysics Data System (ADS)
Naono, Takayuki; Fujii, Takamichi; Esashi, Masayoshi; Tanaka, Shuji
2014-01-01
Resonant 1D microelectromechanical systems (MEMS) optical scanners actuated by piezoelectric unimorph actuators with a Nb-doped lead zirconate titanate (PNZT) thin film were developed for endoscopic optical coherence tomography (OCT) application. The MEMS scanners were designed as the resonance frequency was less than 125 Hz to obtain enough pixels per frame in OCT images. The device size was within 3.4 mm × 2.5 mm, which is compact enough to be installed in a side-imaging probe with 4 mm inner diameter. The fabrication process started with a silicon-on-insulator wafer, followed by PNZT deposition by the Rf sputtering and Si bulk micromachining process. The fabricated MEMS scanners showed maximum optical scan angles of 146° at 90 Hz, 148° at 124 Hz, 162° at 180 Hz, and 152° at 394 Hz at resonance in atmospheric pressure. Such wide scan angles were obtained by a drive voltage below 1.3 Vpp, ensuring intrinsic safety in in vivo uses. The scanner with the unpoled PNZT film showed three times as large a scan angle as that with a poled PZT films. A swept-source OCT system was constructed using the fabricated MEMS scanner, and cross-sectional images of a fingertip with image widths of 4.6 and 2.3 mm were acquired. In addition, a PNZT-based angle sensor was studied for feedback operation.
Yu, Shihui; Li, Lingxia; Zhang, Weifeng; Sun, Zheng; Dong, Helei
2015-01-01
The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices. PMID:25960043
Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.
Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin
2016-02-19
We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.
Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles
NASA Astrophysics Data System (ADS)
Paik, Young Hun; Shokri Kojori, Hossein; Kim, Sung Jin
2016-02-01
We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.
Low symmetry phase in Pb(Zr0.52Ti0.48)O3 epitaxial thin films with enhanced ferroelectric properties
NASA Astrophysics Data System (ADS)
Yan, Li; Li, Jiefang; Cao, Hu; Viehland, D.
2006-12-01
The authors report the structural and ferroelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT) epitaxial thin films grown on (001), (110), and (111) SrRuO3/SrTiO3 substrates by pulsed laser deposition. A monoclinic C (Mc) phase has been found for (101) films, whereas (001) and (111) ones were tetragonal (T ) and rhombohedral (R), respectively. The authors find that the ferroelectric polarization of the Mc phase is higher than that in either the T or R ones. These results are consistent with predictions (i) of epitaxial phase diagrams and (ii) that the enhanced ferroelectric properties of morphotropic phase boundary PZT are related to a low symmetry monoclinic phase.
Structure and Ferroelectric Properties of High Tc BiScO3-PbTiO3 Epitaxial Thin Films.
Wasa, Kiyotaka; Yoshida, Shinya; Hanzawa, Hiroaki; Adachi, Hideaki; Matsunaga, Toshiyuki; Tanaka, Shuji
2016-10-01
Piezoelectric ceramics of new composition with higher Curie temperature T c are extensively studied for better piezoelectric microelectromechanical systems (MEMS). Apart from the compositional research, enhanced T c could be achieved in a modified structure. We have considered that a designed laminated structure of Pb(Zr, Ti)O 3 (PZT)-based thin film, i.e., relaxed heteroepitaxial epitaxial thin film, is one of the promising modified structures to enhance T c . This structure exhibits an extraordinarily high T c , i.e., [Formula: see text] (bulk [Formula: see text]). In this paper, we have fabricated the designed laminated structure of high T c (1-x)BiScO 3 -xPbTiO 3 . T c of BS-0.8PT thin films was found to be extraordinarily high, i.e., [Formula: see text] (bulk T c , [Formula: see text]). Their ferroelectric performances were comparable to those of PZT-based thin films. The present BS-xPT thin films have a high potential for fabrication of high-temperature-stable piezoelectric MEMS. The mechanism of the enhanced T c is probably the presence of the mechanically stable interface to temperature in the laminated structure. We believe this designed laminated structure can extract fruitful properties of bulk ferroelectric ceramics.
Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji
2014-09-01
We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.
Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films
NASA Astrophysics Data System (ADS)
Ortega, N.; Kumar, Ashok; Katiyar, R. S.
2008-10-01
We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.
Proceedings of the 8th International Symposium on Applications of Ferroelectrics
NASA Astrophysics Data System (ADS)
Liu, M.; Safari, A.; Kingon, A.; Haertling, G.
1993-02-01
The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.
A low-frequency MEMS piezoelectric energy harvester with a rectangular hole based on bulk PZT film
NASA Astrophysics Data System (ADS)
Tian, Yingwei; Li, Guimiao; Yi, Zhiran; Liu, Jingquan; Yang, Bin
2018-06-01
This paper presents a high performance piezoelectric energy harvester (PEH) with a rectangular hole to work at low-frequency. This PEH used thinned bulk PZT film on flexible phosphor bronze, and its structure included piezoelectric layer, supporting layer and proof mass to reduce the resonant frequency of the device. Here, thinned bulk PZT thick film was used as piezoelectric layer due to its high piezoelectric coefficient. A Phosphor bronze was deployed as supporting layer because it had better flexibility compared to silicon and could work under high acceleration ambient with good durability. The maximum open-circuit voltage of the PEH was 15.7 V at low resonant frequency of 34.3 Hz when the input vibration acceleration was 1.5 g (g = 9.81 m/s2). Moreover, the maximum output power, the output power density and the actually current at the same acceleration were 216.66 μW, 1713.58 μW/cm3 and 170 μA, respectively, when the optimal matched resistance of 60 kΩ was connected. The fabricated PEH scavenged the vibration energy of the vacuum compression pump and generated the maximum output voltage of 1.19 V.
A Bayesian approach to modeling diffraction profiles and application to ferroelectric materials
Iamsasri, Thanakorn; Guerrier, Jonathon; Esteves, Giovanni; ...
2017-02-01
A new statistical approach for modeling diffraction profiles is introduced, using Bayesian inference and a Markov chain Monte Carlo (MCMC) algorithm. This method is demonstrated by modeling the degenerate reflections during application of an electric field to two different ferroelectric materials: thin-film lead zirconate titanate (PZT) of composition PbZr 0.3Ti 0.7O 3and a bulk commercial PZT polycrystalline ferroelectric. Here, the new method offers a unique uncertainty quantification of the model parameters that can be readily propagated into new calculated parameters.
Piezoelectric ultrasonic micromotor with 1.5 mm diameter.
Dong, Shuxiang; Lim, Siak P; Lee, Kwork H; Zhang, Jingdong; Lim, Leong C; Uchino, Kenji
2003-04-01
A piezoelectric ultrasonic micromotor has been developed using a lead zirconate titanate (PZT) ceramic/metal composite tube stator that was 1.5 mm in diameter and 7 mm in length. The micromotor was operated in its first bending vibration mode (approximately 70 kHz), producing speeds from hundreds to over 2000 rpm in both rotational directions. The maximum torque-output was 45 microN-m, which is far superior to previous PZT thin film-based micromotors. This micromotor showed good reliability and stability for more than 300 hours of continued operation.
Chidambaram, Nachiappan; Mazzalai, Andrea; Muralt, Paul
2012-08-01
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the <011> Si directions. Randomly oriented 1-μm-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C·m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be twice as large as for PPE structures, for PZT-5H properties. The experiments yielded an FOM of the IDE structures of 1.25 × 10(10) J/m(3) and 14 mV/μ strain.
Piezoelectric Sol-Gel Composite Film Fabrication by Stencil Printing.
Kaneko, Tsukasa; Iwata, Kazuki; Kobayashi, Makiko
2015-09-01
Piezoelectric films using sol-gel composites could be useful as ultrasonic transducers in various industrial fields. For sol-gel composite film fabrication, the spray coating technique has been used often because of its adaptability for various substrates. However, the spray technique requires multiple spray coating processes and heating processes and this is an issue of concern, especially for on-site fabrication in controlled areas. Stencil printing has been developed to solve this issue because this method can be used to fabricate thick sol-gel composite films with one coating process. In this study, PbTiO3 (PT)/Pb(Zr,Ti)O3 (PZT) films, PZT/PZT films, and Bi4Ti3O12 (BiT)/PZT films were fabricated by stencil printing, and PT/ PZT films were also fabricated using the spray technique. After fabrication, a thermal cycle test was performed for the samples to compare their ultrasonic performance. The sensitivity and signal-to-noise-ratio (SNR) of the ultrasonic response of PT/PZT fabricated by stencil printing were equivalent to those of PT/PZT fabricated by the spray technique, and better than those of other samples between room temperature and 300°C. Therefore, PT/PZT films fabricated by stencil printing could be a good candidate for nondestructive testing (NDT) ultrasonic transducers from room temperature to 300°C.
A Model of the THUNDER Actuator
NASA Technical Reports Server (NTRS)
Curtis, Alan R. D.
1997-01-01
A THUNDER actuator is a composite of three thin layers, a metal base, a piezoelectric wafer and a metal top cover, bonded together under pressure and at high temperature with the LaRC SI polyimid adhesive. When a voltage is applied between the metal layers across the PZT the actuator will bend and can generate a force. This document develops and describes an analytical model the transduction properties of THUNDER actuators. The model development is divided into three sections. First, a static model is described that relates internal stresses and strains and external displacements to the thermal pre-stress and applied voltage. Second, a dynamic energy based model is described that allows calculation of the resonance frequencies, developed force and electrical input impedance. Finally, a fully coupled electro-mechanical transducer model is described. The model development proceeds by assuming that both the thermal pre-stress and the piezoelectric actuation cause the actuator to deform in a pure bend in a single plane. It is useful to think of this as a two step process, the actuator is held flat, differential stresses induce a bending moment, the actuator is released and it bends. The thermal pre-stress is caused by the different amounts that the constituent layers shrink due to their different coefficients of thermal expansion. The adhesive between layers sets at a high temperature and as the actuator cools, the metal layers shrink more than the PZT. The PZT layer is put into compression while the metal layers are in tension. The piezoelectric actuation has a similar effect. An applied voltage causes the PZT layer to strain, which in turn strains the two metal layers. If the PZT layer expands it will put the metal layers into tension and PZT layer into compression. In both cases, if shear force effects are neglected, the actuator assembly will experience a uniform in-plane strain. As the materials each have a different elastic modulus, different stresses will develop in each layer and these stresses will induce a bending moment. When the actuator is released from its flat configuration, the differential stresses are relieved as the actuator bends.
NASA Astrophysics Data System (ADS)
Tang, M. H.; Zhang, J.; Xu, X. L.; Funakubo, H.; Sugiyama, Y.; Ishiwara, H.; Li, J.
2010-10-01
(1-x)Pb(Zr0.4,Ti0.6)O3-(x)Bi(Zn0.5,Ti0.5)O3 (PZT-BZT) (x =0, 0.03, 0.05, 0.08, and 0.1) films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition using spin-coating. All samples showed highly (111) oriented perovskite phase and no other phase was observed. The ferroelectric properties of PZT-BZT films were systematically investigated as a function of the content x of the BZT solution. It is found that BZT doping in PZT films could greatly enhance the remnant polarization (Pr), as well as improve the fatigue property. In a 3 wt % BZT-doped PZT film, the 2Pr and the coercive field (Ec) are 90 μC/cm2 and 95 kV/cm at 10 kHz, respectively, at an electric field of 500 kV/cm, and the leakage current density is less than 1×10-7 A/cm2. The impact of BZT doping on the structure of PZT has been investigated by x-ray photoelectron spectroscopy.
NASA Astrophysics Data System (ADS)
Kang, Sin Wook; Cho, Sam Yeon; Bu, Sang Don; Han, Jin Kyu; Lee, Gyoung-Ja; Lee, Min-Ku
2018-05-01
In this study, a nanocomposite was successfully fabricated by mixing Pb(Zr,Ti)O3 (PZT) prepared by using the sol-gel method and functionalized multi-walled carbon nanotubes (MWCNTs). During this process, the effect of the change in the molar concentration of PZT on the crystallinity and the piezoelectric properties of the PZT in the nanocomposite was investigated. As the number of PZT coatings was increased from one to three, PZT was confirmed as having completely covered the MWCNT nanocomposite. Also, the tetragonality of PZT in the crystal structure was confirmed to have increased with increasing number of PZT coatings. Such an increase in crystallinity was followed by an increase in the ferroelectricity of the nanocomposite. A nano-generator was fabricated by using the nanocomposite fabricated as described above, and the characteristics of the nanogenerator were confirmed to have been improved with increasing number of coatings.
NASA Astrophysics Data System (ADS)
Zheng, Fengang; Zhang, Peng; Wang, Xiaofeng; Huang, Wen; Zhang, Jinxing; Shen, Mingrong; Dong, Wen; Fang, Liang; Bai, Yongbin; Shen, Xiaoqing; Sun, Hua; Hao, Jianhua
2014-02-01
PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm-2, AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm-2, AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr05757g
NASA Astrophysics Data System (ADS)
Park, Jae Hyo; Joo, Seung Ki
2016-03-01
A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated laterally crystallized single-grain Pb(Zr,Ti)O3 (PZT) ferroelectric and ZrTiO4 paraelectric thin-film. The combination of ferroelectric and paraelectric thin-film is enabled to form a negative capacitance (NC) at the weak inversion region. However, the PZT grain-boundary easily degrades the NC properties after switching the on/off more than 108 times. It is found that the polarization of PZT is diminished from the path of grain-boundary. Here, we effectively suppress the degradation of NC MOS-FET which did not showed any fatigue even after 108 on/off switching. At the request of the authors this article is retracted due to duplication of figures and significant overlap with other publications by the authors and because of concerns about the accuracy of the description of the devices and materials from which the reported results were obtained. The authors recognize that these represent serious errors and sincerely apologize for any inconvenience they may have caused. The article is retracted from the scientific record with effect from 17 February 2017.
Choi, Jongsoo; Duan, Xiyu; Li, Haijun; Wang, Thomas D; Oldham, Kenn R
2017-10-01
Use of a thin-film piezoelectric microactuator for axial scanning during multi-photon vertical cross-sectional imaging is described. The actuator uses thin-film lead-zirconate-titanate (PZT) to generate upward displacement of a central mirror platform, micro-machined from a silicon-on-insulator (SOI) wafer to dimensions compatible with endoscopic imaging instruments. Device modeling in this paper focuses on existence of frequencies near device resonance producing vertical motion with minimal off-axis tilt even in the presence of multiple vibration modes and non-uniformity in fabrication outcomes. Operation near rear resonance permits large stroke lengths at low voltages relative to other vertical microactuators. Highly uniform vertical motion of the mirror platform is a key requirement for vertical cross-sectional imaging in the remote scan architecture being used for multi-photon instrument prototyping. The stage is installed in a benchtop testbed in combination with an electrostatic mirror that performs in-plane scanning. Vertical sectional images are acquired from 15 μm diameter beads and excised mouse colon tissue.
NASA Astrophysics Data System (ADS)
Welsh, Aaron
This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness transfer across the entire feature widths, with increased sidewall angles of ˜ 35 degrees. This was at the cost of degrading line edge definition from ˜ 200 nm to ˜ 500 nm. The loss of line edge definition was mitigated through the combined use of printing from stamp recesses onto raised substrate features. This allowed for printing of PZT features down to 1 mum wide. Solutions could also be transferred onto both fixed and free standing cantilever structures patterned into a substrate surface. Optimization of the stamp removal from the substrate was crucial in increasing sidewall angles of printed PZT films. It was determined that solutions gel once deposited onto the stamp before printing. As a result, printed films could not redistribute easily after transfer had occurred. Through a combination of varying peeling directions and peeling rates, it was possible to deposit thin film PZT on a pre patterned feature ˜ 1 mum wide with sidewall angles > 80 degrees. These printing techniques were utilized in printing a 250 nm thick 30/70 PZT onto prepatterned cantilever structures for use in a bio-functionalized, mass sensing resonating structure in collaboration with a bio-nanoelectromechincal sensing research group from the University of Toulouse, France. The features ranged in lateral size from 30 down to 1 mum. The printed devices exhibited a relative permittivity of 500 +/- 10 and a loss tangent of 0.9 +/- 0.1 %. The hysteresis loops were well formed, without pinching of the loops, and exhibited remanent polarizations of 24 +/- 0.5 muC/cm2, and coercive fields of 110 +/- 1 kV/cm. Dry etched features of the same size and thickness displayed a relative permittivity of 445 +/- 8 and a loss tangent of 0.9 +/- 0.1 %. The hysteresis loops exhibited pinched loops with remanent polarizations of 24 +/- 0.7 muC/cm2, and coercive fields of 112 +/- 2 kV/cm. Upon cycling, the dry etched films developed a 20 kV/cm imprint with reduced remanent polarizations to 20.5 +/- 0.5 muC/cm2 .
New applications of a model of electromechanical impedance for SHM
NASA Astrophysics Data System (ADS)
Pavelko, Vitalijs
2014-03-01
The paper focuses on the further development of the model of the electromechanical impedance (EMI) of the piezoceramics transducer (PZT) and its application for aircraft structural health monitoring (SHM). There was obtained an expression of the electromechanical impedance common to any dimension of models (1D, 2D, 3D), and directly independent from imposed constraints. Determination of the dynamic response of the system "host structure - PZT", which is crucial for the practical application supposes the use of modal analysis. This allows to get a general tool to determine EMI regardless of the specific features of a particular application. Earlier there was considered the technology of separate determination of the dynamic response for the PZT and the structural element". Here another version that involves the joint modal analysis of the entire system "host structure - PZT" is presented. As a result, the dynamic response is obtained in the form of modal decomposition of transducer mechanical strains. The use of models for the free and constrained transducer, analysis of the impact of the adhesive layer to the EMI is demonstrated. In all cases there was analyzed the influence of the dimension of the model (2D and 3D). The validity of the model is confirmed by experimental studies. Correlation between the fatigue crack length in a thin-walled Al plate and EMI of embedded PZT was simulated and compared with test result.
Coupling of PZT Thin Films with Bimetallic Strip Heat Engines for Thermal Energy Harvesting.
Boughaleb, Jihane; Arnaud, Arthur; Guiffard, Benoit; Guyomar, Daniel; Seveno, Raynald; Monfray, Stéphane; Skotnicki, Thomas; Cottinet, Pierre-Jean
2018-06-06
A thermal energy harvester based on a double transduction mechanism and which converts thermal energy into electrical energy by means of piezoelectric membranes and bimetals, has previously been developed and widely presented in the literature In such a device, the thermo-mechanical conversion is ensured by a bimetal whereas the electro-mechanical conversion is generated by a piezoelectric ceramic. However, it has been shown that only 19% of the mechanical energy delivered by the bimetal during its snap is converted into electrical energy. To extract more energy from the bimetallic strip and to increase the transduction efficiency, a new way to couple piezoelectric materials with bimetals has thus been explored through direct deposition of piezoelectric layers on bimetals. This paper consequently presents an alternative way to harvest heat, based on piezoelectric bimetallic strip heat engines and presents a proof of concept of such a system. In this light, different PZT (Lead zirconate titanate) thin films were synthesized directly on aluminium foils and were attached to the bimetals using conductive epoxy. The fabrication process of each sample is presented herein as well as the experimental tests carried out on the devices. Throughout this study, different thicknesses of the piezoelectric layers and substrates were tested to determine the most powerful configuration. Finally, the study also gives some guidelines for future improvements of piezoelectric bimetals.
2017-01-01
Nanosheet Ca2Nb3O10 (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir–Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr0.52Ti0.48)O3 (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties of the films. The PLD deposition temperature and repetition frequency used for the deposition of the PZT films were found to play a key role in the precise control of the microstructure and therefore of the ferroelectric and piezoelectric properties. A film deposited at a high repetition frequency has a columnar grain structure, which helps to increase the longitudinal piezoelectric coefficient (d33f). An enhanced d33f value of 356 pm V–1 was obtained for 2-μm-thick PZT films on CNOns/glass substrates. This high value is ascribed to the preferential alignment of the crystalline [001] axis normal to the substrate surface and the open columnar structure. Large displacement actuators based on such PZT films grown on CNOns/glass substrates should be useful in smart X-ray optics applications. PMID:28952313
NASA Astrophysics Data System (ADS)
Chopra, Anuj; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Fred; Rijnders, Guus
2016-12-01
Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber-Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ˜97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.
Fabrication of piezoelectric ceramic fibers by extrusion of PZT powder and PZT sol mixture
NASA Astrophysics Data System (ADS)
Kobayashi, Yoshimasa; Um, Tae Y.; Qiu, Jinhao; Tani, Junji; Takahashi, Hirofumi
2001-07-01
This study aims to fabricate Pb(Zr,Ti)O3 (PZT) piezoelectric ceramic fibers by extrusion with mixture of PZT powder and PZT sol. The added PZT sol in this study played a role as a binder; the sol changed into PZT crystalline during sintering, and removal process of additives before sintering was not required. To obtain PZT fibers, the condition of sol viscosity adjustment, the mixture ratio of powder and sol for fiber extrusion, and the sintering condition for obtaining polycrystalline fibers were investigated. PZT precursor solution was synthesized from lead acetate trihydrate, zirconium n-propoxide and titanium isopropoxide by reflux at 120 degree(s)C for 3 hours with 2-methoxyethanol. The appropriate adjustment of spinnable sol was achieved by the addition of acetic acid for suppressing the hydrolysis reaction and the curing sol at 80 degree(s)C for promoting the condensation of sol. Green fibers with diameter of about 300micrometers were successfully extruded from the mixture of PZT powder and sol. The extruded fibers sintered at 1200 degree(s)C had the microstructure with 2-6micrometers grains and had no pores or cracks. From the result of displacement behavior measurement, PZT fibers fabricated by firing at 1200 degree(s)C in this study were considered to have desired piezoelectric properties.
MEMS-Based Waste Vibrational Energy Harvesters
2013-06-01
7 1. Lead Zirconium Titanate ( PZT ) .........................................................7 2. Aluminum...Laboratory PiezoMUMPS Piezoelectric Multi-User MEMS Processes PZT Lead Zirconate Titanate SEM Scanning Electron Microscopy SiO2 Silicon...titanate ( PZT ) possess high 4 coupling between the electrical and mechanical domains [11]. The output voltage, V, is related to the z-component
Microelectromechanical systems (MEMS) sensors based on lead zirconate titanate (PZT) films
NASA Astrophysics Data System (ADS)
Wang, Li-Peng
2001-12-01
In this thesis, modeling, fabrication and testing of microelectromechanical systems (MEMS) accelerometers based on piezoelectric lead zirconate titanate (PZT) films are investigated. Three different types of structures, cantilever beam, trampoline, and annular diaphragm, are studied. It demonstrates the high-performance, miniaturate, mass-production-compatible, and potentially circuitry-integratable piezoelectric-type PZT MEMS devices. Theoretical models of the cantilever-beam and trampoline accelerometers are derived via structural dynamics and the constitutive equations of piezoelectricity. The time-dependent transverse vibration equations, mode shapes, resonant frequencies, and sensitivities of the accelerometers are calculated through the models. Optimization of the silicon and PZT thickness is achieved with considering the effects of the structural dynamics, the material properties, and manufacturability for different accelerometer specifications. This work is the first demonstration of the fabrication of bulk-micromachined accelerometers combining a deep-trench reactive ion etching (DRIE) release strategy and thick piezoelectric PZT films deposited using a sol-gel method. Processing challenges which are overcome included materials compatibility, metallization, processing of thick layers, double-side processing, deep-trench silicon etching, post-etch cleaning and process integration. In addition, the processed PZT films are characterized by dielectric, ferroelectric (polarization electric-field hysteresis), and piezoelectric measurements and no adverse effects are found. Dynamic frequency response and impedance resonance measurements are performed to ascertain the performance of the MEMS accelerometers. The results show high sensitivities and broad frequency ranges of the piezoelectric-type PZT MEMS accelerometers; the sensitivities range from 0.1 to 7.6 pC/g for resonant frequencies ranging from 44.3 kHz to 3.7 kHz. The sensitivities were compared to theoretical values and a reasonable agreement (˜36% difference) is obtained.
Zhao, Zhenli; Luo, Zhenlin; Liu, Chihui; Wu, Wenbin; Gao, Chen; Lu, Yalin
2008-06-01
This article describes a new approach to quantitatively measure the piezoelectric coefficients of thin films at the microscopic level using a scanning evanescent microwave microscope. This technique can resolve 10 pm deformation caused by the piezoelectric effect and has the advantages of high scanning speed, large scanning area, submicron spatial resolution, and a simultaneous accessibility to many other related properties. Results from the test measurements on the longitudinal piezoelectric coefficient of PZT thin film agree well with those from other techniques listed in literatures.
Effects of crystallization interfaces on irradiated ferroelectric thin films
NASA Astrophysics Data System (ADS)
Brewer, S. J.; Williams, S. C.; Cress, C. D.; Bassiri-Gharb, N.
2017-11-01
This work investigates the role of crystallization interfaces and chemical heterogeneity in the radiation tolerance of chemical solution-deposited lead zirconate titanate (PZT) thin films. Two sets of PZT thin films were fabricated with crystallization performed at (i) every deposited layer or (ii) every three layers. The films were exposed to a range of 60Co gamma radiation doses, between 0.2 and 20 Mrad, and their functional response was compared before and after irradiation. The observed trends indicate enhancements of dielectric, ferroelectric, and piezoelectric responses at low radiation doses and degradation of the same at higher doses. Response enhancements are expected to result from low-dose (≤2 Mrad), ionizing radiation-induced charging of internal interfaces—an effect that results in neutralization of pre-existing internal bias in the samples. At higher radiation doses (>2 Mrad), accumulation and self-ordering of radiation-modified, mobile, oxygen vacancy-related defects contribute to degradation of dielectric, ferroelectric, and piezoelectric properties, exacerbated in the samples with more crystallization layers, potentially due to increased defect accumulation at these internal interfaces. These results suggest that the interaction between radiation and crystallization interfaces is multifaceted—the effects of ionization, domain wall motion, point defect mobility, and microstructure are considered.
NASA Astrophysics Data System (ADS)
Lai, Zhi; Zeng, Xiaodong; Fan, Zhaojin; Xu, Zhichen
2016-09-01
The parameters of light source in synthetic aperture ladar (SAL) is very important to both the design of system and the signal processing algorithm. As the light source in the SAL, the fiber laser use PZT (piezoelectric ceramics) tube stretching the fiber Bragg grating in order to tune the laser frequency. So it is necessary to obtain the deformation and frequency response of PZT tube driven by saw-tooth voltage of different periods. Accordingly, the homodyne detection is used to measure the girth variation of PZT tube. Meanwhile, the frequency response of PZT tube can be viewed with the homodyne signal. The results from measuring a PZT tube show that the method can work well.
Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki
2016-01-01
Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115
Temperature dependence of field-responsive mechanisms in lead zirconate titanate
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chung, Ching-Chang; Fancher, Chris M.; Isaac, Catherine
2017-05-17
An electric field loading stage was designed for use in a laboratory diffractometer that enables in situ investigations of the temperature dependence in the field response mechanisms of ferroelectric materials. The stage was demonstrated in this paper by measuring PbZr 1-xTi xO 3 (PZT) based materials—a commercially available PZT and a 1% Nb-doped PbZr 0.56Ti 0.44O 3 (PZT 56/44)—over a temperature range of 25°C to 250°C. The degree of non-180° domain alignment (η 002) of the PZT as a function of temperature was quantified. η 002 of the commercially available PZT increases exponentially with temperature, and was analyzed as amore » thermally activated process as described by the Arrhenius law. The activation energy for thermally activated domain wall depinning process in PZT was found to be 0.47 eV. Additionally, a field-induced rhombohedral to tetragonal phase transition was observed 5°C below the rhombohedral-tetragonal transition in PZT 56/44 ceramic. The field-induced tetragonal phase fraction was increased 41.8% after electrical cycling. Finally, a large amount of domain switching (η 002=0.45 at 1.75 kV/mm) was observed in the induced tetragonal phase.« less
Preparation of lead-zirconium-titanium film and powder by electrodeposition
Bhattacharya, Raghu N.; Ginley, David S.
1995-01-01
A process for the preparation of lead-zirconium-titanium (PZT) film and powder compositions. The process comprises the steps of providing an electrodeposition bath, providing soluble salts of lead, zirconium and titanium metals to this bath, electrically energizing the bath to thereby direct ions of each respective metal to a substrate electrode and cause formation of metallic particles as a recoverable film of PZT powder on the electrode, and also recovering the resultant film as a powder. Recovery of the PZT powder can be accomplished by continually energizing the bath to thereby cause powder initially deposited on the substrate-electrode to drop therefrom into the bath from which it is subsequently removed. A second recovery alternative comprises energizing the bath for a period of time sufficient to cause PZT powder deposition on the substrate-electrode only, from which it is subsequently recovered. PZT film and powder so produced can be employed directly in electronic applications, or the film and powder can be subsequently oxidized as by an annealing process to thereby produce lead-zirconium-titanium oxide for use in electronic applications.
Preparation of lead-zirconium-titanium film and powder by electrodeposition
Bhattacharya, R.N.; Ginley, D.S.
1995-10-31
A process is disclosed for the preparation of lead-zirconium-titanium (PZT) film and powder compositions. The process comprises the steps of providing an electrodeposition bath, providing soluble salts of lead, zirconium and titanium metals to this bath, electrically energizing the bath to thereby direct ions of each respective metal to a substrate electrode and cause formation of metallic particles as a recoverable film of PZT powder on the electrode, and also recovering the resultant film as a powder. Recovery of the PZT powder can be accomplished by continually energizing the bath to thereby cause powder initially deposited on the substrate-electrode to drop therefrom into the bath from which it is subsequently removed. A second recovery alternative comprises energizing the bath for a period of time sufficient to cause PZT powder deposition on the substrate-electrode only, from which it is subsequently recovered. PZT film and powder so produced can be employed directly in electronic applications, or the film and powder can be subsequently oxidized as by an annealing process to thereby produce lead-zirconium-titanium oxide for use in electronic applications. 4 figs.
Enhancement of fatigue endurance in ferroelectric PZT ceramic by the addition of bismuth layered SBT
NASA Astrophysics Data System (ADS)
Namsar, O.; Pojprapai, S.; Watcharapasorn, A.; Jiansirisomboon, S.
2014-10-01
Electrical fatigue properties of (1-x)PZT-xSBT ceramics (x = 0-1.0 weight fraction) were characterized. It was found that pure PZT ceramic had severe polarization fatigue. This was mainly attributed to an occurrence of the macroscopic cracks at near-electrode regions. On the contrary, pure SBT ceramic exhibited excellent fatigue resistance, which was attributed primarily to weak domain wall pinning. As small amount of SBT (0.1 ≤ x ≤ 0.3) was added into PZT, a small reduction of remanent polarization after fatigue process was observed. This demonstrated that these ceramics had high stability during the repeated domain switching due to their low oxygen vacancy concentration. Therefore, these results suggested that this new ceramic PZT-SBT system seemed to be an alternative material for replacing pure PZT in ferroelectric memory applications.
NASA Astrophysics Data System (ADS)
Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing
2018-02-01
Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.
Feng, Guo-Hua; Lee, Kuan-Yi
2017-12-01
This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal-oxide-semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.
Lee, Kuan-Yi
2017-01-01
This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal–oxide–semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air. PMID:29308260
NASA Astrophysics Data System (ADS)
Feng, Guo-Hua; Lee, Kuan-Yi
2017-12-01
This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal-oxide-semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.
Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho
2018-04-04
Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.
Fabrication of lead zirconate titanate actuator via suspension polymerization casting
NASA Astrophysics Data System (ADS)
Miao, Weiguo
2000-10-01
The research presented herein has focused on the fabrication of a lead zirconate titanate (PZT) telescopic actuator from Suspension Polymerization Casting (SPC). Two systems were studied: an acrylamide-based hydrogel, and an acrylate-based nonaqueous system. Analytical tools such as thermomechanical analysis (TMA), differential scanning calorimetry (DSC), chemorheology, thermogravimetric analysis (TGA), and differential thermal analysis (DTA) were used to investigate the polymerization and burnout processes. The acrylamide hydrogel polymerization casting process used hydroxymethyl acrylamide (HMAM) monofunctional monomer with methylenebisacrylamide (MBAM) difunctional monomer, or used methacrylamide (MAM) as monofunctional monomer. High solid loading PZT slurries with low viscosities were obtained by optimizing the amounts of dispersant and the PZT powders. The overall activation energy of gelation was calculated to be 60--76 kJ/mol for the monomer solution, this energy was increased to 91 kJ/mol with the addition of PZT powder. The results show that the PZT powder has a retardation effect on gelation. Although several PZT tubes were made using the acrylamide-based system, the demolding and drying difficulties made this process unsuitable for building internal structures, such as the telescopic actuator. The acrylate-based system was used successfully to build telescopic actuator. Efforts were made to study the influence of composition and experimental conditions on the polymerization process. Temperature was found to have the largest impact on polymerization. To adjust the polymerization temperature and time, initiator and/or catalyst were used. PZT powder has a catalytic effect on the polymerization process. Compared with acrylamide systems, acrylate provided a strong polymer network to support the ceramic green body. This high strength is beneficial for the demolding process, but it can easily cause cracks during the burnout process. To solve the burnout issue, non-reactive decalin was used as a solvent to lower the stress inside the green body. The addition of decalin has no large impact on the polymerization process. With 15 wt% decalin in the monomer solution, the burnout process was successfully solved. The burnout process was monitored by TGA/DTA and TMA. A 51 vol% PZT filled acrylate slurry was cast into a mold made by Stereolithography (SLA), and after curing, the telescopic actuator was removed from the mold. This indirect SLA method provides an efficient way to build ceramic parts. PZT samples were sintered at 1275°C for 4 hours, with density over 98%. SEM analysis showed the sample made by SPC has a uniform microstructure, which may be beneficial to the electric properties. The sample made by polymerization has a d33 value about 680 pm/V, which is better than the literature value (580 pm/V). The electric tests showed this telescopic actuator produced a maximum deflection of 24.7 mum at 250 kV/m, in line with theoretical calculations. Compared with actuators made by other methods, the actuator made by SPC provides a comparable structural factor (187.5). The distortion in actuators is caused by fabrication and sintering.
Pulsed-Laser Crystallization of Ferroelectric/Piezoelectric Oxide Thin Films
NASA Astrophysics Data System (ADS)
Rajashekhar, Adarsh
Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400°C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550°C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates. In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures < 215°C were investigated. (111) Pt/Si substrates were utilized to understand the process window. Laser energy densities studied were in the range 35 - 85 mJ/cm2. The Pb content in the films was varied via the Ar gas pressure (in the range 5 mTorr - 9 mTorr) during sputtering of amorphous films. It was seen that a higher Pb content in the asdeposited films aided nucleation of the perovskite phase. Ozone-containing ambients (10% O3/90% O2) during the annealing promoted the formation of the metastable Pb-rich pyrochlore/fluorite phase, while annealing in pure oxygen produced the perovskite phase at relatively lower annealing laser energy densities. Heterogeneous nucleation from the substrate is favored on utilizing a layer-by-layer growth and crystallization process. Films were also grown on polymers using this method. Ferroelectric switching was demonstrated, but extensive process optimization would be needed to reduce leakage and porosity. Real time laser annealing during growth allows for scaling of the layer-by-layer growth process. A pulsed laser deposition system with in situ laser annealing was thus designed, built, and utilized to grow Pb(Zr 0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of 370°C. Polycrystalline 1.1 microm thick films exhibited columnar grains with small grain sizes ( 30 nm). The films showed well-saturated hysteresis loops (with a remanent polarization of 25 microC/cm2, and a coercive field of 50 kV/cm) and exhibited loss tangents <2.5% with a permittivity of 730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O3 sol-gel seed layers, while epitaxial {001} films were prepared on (100) SrTiO 3 single crystals. In order to study the microstructure evolution in these films, in situ pulsed-laser annealing was used to grow crystalline lead zirconate titanate (PbZr0.52Ti0.48O3) thin films at a substrate temperature of 370°C on PbZr0.30Ti 0.70O3-buffered platinized silicon substrates. Transmission electron microscopy (TEM) analysis indicated that the films were well crystallized into columnar grains, but with pores segregated at the grain boundaries. Lateral densification of the grain columns was significantly improved by reducing the partial pressure of oxygen from 120 mTorr to 50 mTorr, presumably due to enhanced adatom mobility at the surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the fractional annealing duration led to shift of 111 PZT X-ray diffraction peaks to higher 2theta values, suggesting residual in-plane tensile stresses in the films. Thermal simulations were used to understand the annealing process. Evolution of the film microstructure is described in terms of transient heating from the pulsed laser determining the nucleation events, while the energy of the arriving species dictates grain growth/coarsening.
Energy Harvesting with Coupled Magnetorestrictive Resonators
2013-09-01
matching, small hysteresis, and low coercivity2. Ceramic material like PZT tends to develop fatigue during its cycles whereas Galfenol does not have...Magnetostrictive Material PZT Pb [ZrxTi1-x] O3, 0<xə, Lead Zirconate Titanate RX Receiver SHM Structural Health Monitoring...zirconate titanate [ PZT ]) have lead in their fabrication process, which is an environmental risk. Another major issue with standard energy
Development of dual PZT transducers for reference-free crack detection in thin plate structures.
Sohn, Hoon; Kim, Seuno Bum
2010-01-01
A new Lamb-wave-based nondestructive testing (NDT) technique, which does not rely on previously stored baseline data, is developed for crack monitoring in plate structures. Commonly, the presence of damage is identified by comparing "current data" measured from a potentially damaged stage of a structure with "baseline data" previously obtained at the intact condition of the structure. In practice, structural defects typically take place long after collection of the baseline data, and the baseline data can be also affected by external loading, temperature variations, and changing boundary conditions. To eliminate the dependence on the baseline data comparison, the authors previously developed a reference-free NDT technique using 2 pairs of collocated lead zirconate titanate (PZT) transducers placed on both sides of a plate. This reference-free technique is further advanced in the present study by the necessity of attaching transducers only on a single surface of a structure for certain applications such as aircraft. To achieve this goal, a new design of PZT transducers called dual PZT transducers is proposed. Crack formation creates Lamb wave mode conversion due to a sudden thickness change of the structure. This crack appearance is instantly detected from the measured Lamb wave signals using the dual PZT transducers. This study also suggests a reference-free statistical approach that enables damage classification using only the currently measured data set. Numerical simulations and experiments were conducted using an aluminum plate with uniform thickness and fundamental Lamb waves modes to demonstrate the applicability of the proposed technique to reference-free crack detection.
Monitoring of Grouting Compactness in a Post-Tensioning Tendon Duct Using Piezoceramic Transducers
Jiang, Tianyong; Kong, Qingzhao; Wang, Wenxi; Huo, Linsheng; Song, Gangbing
2016-01-01
A post-tensioning tendon duct filled with grout can effectively prevent corrosion of the reinforcement, maintain bonding behavior between the reinforcement and concrete, and enhance the load bearing capacity of concrete structures. In practice, grouting of the post-tensioning tendon ducts always causes quality problems, which may reduce structural integrity and service life, and even cause accidents. However, monitoring of the grouting compactness is still a challenge due to the invisibility of the grout in the duct during the grouting process. This paper presents a stress wave-based active sensing approach using piezoceramic transducers to monitor the grouting compactness in real time. A segment of a commercial tendon duct was used as research object in this study. One lead zirconate titanate (PZT) piezoceramic transducer with marble protection, called a smart aggregate (SA), was bonded on the tendon and installed in the tendon duct. Two PZT patch sensors were mounted on the top outside surface of the duct, and one PZT patch sensor was bonded on the bottom outside surface of the tendon duct. In the active sensing approach, the SA was used as an actuator to generate a stress wave and the PZT sensors were utilized to detect the wave response. Cement or grout in the duct functions as a wave conduit, which can propagate the stress wave. If the cement or grout is not fully filled in the tendon duct, the top PZT sensors cannot receive much stress wave energy. The experimental procedures simulated four stages during the grout pouring process, which includes empty status, half grouting, 90% grouting, and full grouting of the duct. Experimental results show that the bottom PZT sensor can detect the signal when the grout level increases towards 50%, when a conduit between the SA and PZT sensor is formed. The top PZT sensors cannot receive any signal until the grout process is completely finished. The wavelet packet-based energy analysis was adopted in this research to compute the total signal energy received by PZT sensors. Experimental results show that the energy levels of the PZT sensors can reflect the degree of grouting compactness in the duct. The proposed method has the potential to be implemented to monitor the tendon duct grouting compactness of the reinforced concrete structures with post tensioning. PMID:27556470
Integration of bulk piezoelectric materials into microsystems
NASA Astrophysics Data System (ADS)
Aktakka, Ethem Erkan
Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with <7mW power consumption. The close match between test data and simulation results suggests that the piezoelectric properties of bulk-PZT5A are mostly preserved without any necessity of repolarization. Three generations of resonant vibration energy harvesters are designed, simulated and fabricated to demonstrate the competitive performance of the new fabrication process over traditional piezoelectric deposition systems. An unpackaged PZT/Si unimorph harvester with 27mm3 active device volume produces up to 205microW at 1.5g/154Hz. The prototypes have achieved the highest figure-of-merits (normalized-power-density x bandwidth) amongst previously reported inertial energy harvesters. The fabricated energy harvester is utilized to create an autonomous energy generation platform in 0.3cm3 by system-level integration of a 50-80% efficient power management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of <1microW in active-mode (measured) and <5pA in sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.
Stress effects in ferroelectric perovskite thin-films
NASA Astrophysics Data System (ADS)
Zednik, Ricardo Johann
The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution synchrotron x-ray diffraction indicates that a small effective restoring stress of about 1 MPa acts on the domain walls in these nano-crystalline PZT films. This insight allows reversible control of the ferroelectric and dielectric behavior of these important functional oxide materials, with important implications for associated integrated devices.
Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.
Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K
2010-10-01
This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.
Production of continuous piezoelectric ceramic fibers for smart materials and active control devices
NASA Astrophysics Data System (ADS)
French, Jonathan D.; Weitz, Gregory E.; Luke, John E.; Cass, Richard B.; Jadidian, Bahram; Bhargava, Parag; Safari, Ahmad
1997-05-01
Advanced Cerametrics Inc. has conceived of and developed the Viscous-Suspension-Spinning Process (VSSP) to produce continuous fine filaments of nearly any powdered ceramic materials. VSSP lead zirconate titanate (PZT) fiber tows with 100 and 790 filaments have been spun in continuous lengths exceeding 1700 meters. Sintered PZT filaments typically are 10 - 25 microns in diameter and have moderate flexibility. Prior to carrier burnout and sintering, VSSP PZT fibers can be formed into 2D and 3D shapes using conventional textile and composite forming processes. While the extension of PZT is on the order of 20 microns per linear inch, a woven, wound or braided structure can contain very long lengths of PZT fiber and generate comparatively large output strokes from relatively small volumes. These structures are intended for applications such as bipolar actuators for fiber optic assembly and repair, vibration and noise damping for aircraft, rotorcraft, automobiles and home applications, vibration generators and ultrasonic transducers for medical and industrial imaging. Fiber and component cost savings over current technologies, such as the `dice-and-fill' method for transducer production, and the range of unique structures possible with continuous VSSP PZT fiber are discussed. Recent results have yielded 1-3 type composites (25 vol% PZT) with d33 equals 340 pC/N, K equals 470, and g33 equals 80 mV/N, kt equals 0.54, kp equals 0.19, dh equals 50.1pC/N and gh equals 13 mV/N.
Quantitative Diagnostics of Multilayered Composite Structures with Ultrasonic Guided Waves
2014-09-01
sensors. These IDT sensors were fabricated from thin wafer of piezoelectric lead zirconate titanate ( PZT ) substrates by using a pulse laser micro...pavement structures," J. Acoust. Soc. Am., vol. 116, no. 5, pp. 2902-2913, 2004. [9] E. Kostson and P. Fromme, " Fatigue crack growth monitoring in multi
Characteristic analysis of diaphragm-type transducer that is thick relative to its size
NASA Astrophysics Data System (ADS)
Ishiguro, Yuya; Zhu, Jing; Tagawa, Norio; Okubo, Tsuyoshi; Okubo, Kan
2017-07-01
In recent years, high-performance piezoelectric micromachined ultrasonic transducers (PMUTs) have been fabricated by micro electro mechanical systems (MEMS) technology. For high-resolution imaging, it is important to broaden the frequency bandwidth. By reducing the diaphragm size to increase the resonance frequency, the film thickness becomes relatively larger and hence the transmitting and receiving characteristics may different from those of a usual thin diaphragm. In this study, we examine the performance of a square-diaphragm-type lead zirconate titanate (PZT) transducer through simulations. To realize the desired resonance frequency of 20 MHz, firstly, the diaphragm size and the thickness of the layers of PZT and Si constituting a PMUT are examined, and then, three PZT/Si models with different thicknesses are selected. Subsequently, using the models, we analyze the transmitting efficiency, transmitting bandwidth, receiving sensitivity (piezoelectric voltage/electric charge), and receiving bandwidth using an FEM simulator. It is found that the proposed models can transmit ultrasound independently of the diaphragm vibration and have wide bandwidth of the receiving frequency as compared with that of a typical PMUT.
Multiscale Modeling and Process Optimization for Engineered Microstructural Complexity
2007-10-26
R. C. Rogan, E. Üstündag, M. R. Daymond and V. Knoblauch Ferroelastic Behavior of PZT -Based Ferroelectric Ceramics , Materials Science Forum, 404...Bhattacharya, Materials Science Seminar, University of Southern California, 2003. 42. R.C. Rogan, Texture and Strain Analysis of PZT by In-Situ...Annual Meeting of the American Ceramic Society, St. Louis, MO; May 2002. 44. R. Rogan, Ferroelastic Behavior of PZT -Based Ferroelectric Ceramics , 6th
Micro-Machined High-Frequency (80 MHz) PZT Thick Film Linear Arrays
Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K. Kirk
2010-01-01
This paper presents the development of a micro-machined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT solgel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (−6 dB) of 60%. An insertion loss of −41 dB and adjacent element crosstalk of −21 dB were found at the center frequency. PMID:20889407
HS-SPM Mapping of Ferroelectric Domain Dynamics with Combined Nanoscale and Nanosecond Resolution
NASA Astrophysics Data System (ADS)
Polomoff, Nicholas Alexander
The unique properties of ferroelectric materials have been applied for a wide variety of device applications. In particular, properties such as spontaneous polarization and domain structure hysteresis at room temperature have rendered its application in nonvolatile memory devices such as FeRAMs. Along with the ever-present drive for smaller memory devices is the demand that they have increased operating speeds, longer retention times, lower power requirements and better overall reliability. It is therefore pertinent that further investigation of the dynamics, kinetics and mechanisms involved with ferroelectric domain polarization reversal at nanoscale lengths and temporal durations be conducted to optimize future ferroelectric based nonvolatile memory devices. Accordingly High Speed Piezoforce Microscopy (HSPFM) will be employed to directly investigate and observe the dynamic nucleation and growth progression of ferroelectric domain polarization reversal processes in thin epitaxial deposited PZT films. The capabilities of HSPFM will allow for in-situ direct observation of nascent dynamic domain polarization reversal events with nanoscale resolution. Correlations and characterization of the thin ferroelectric film samples will be made based on the observed polarization reversal dynamics and switching mechanism with respect to their varying strain states, compositions, and/or orientations. Electrical pulsing schemes will also be employed to enhance the HSPFM procedure to achieve nanoscale temporal resolution of nascent domain nucleation and growth events. A unique pulsing approach is also proposed, and tested, to improve power consumption during switching. Finally, artificial defects will be introduced into the PZT thin film by fabricating arrays of indentations with different shapes and loads. These controlled indents will result in the introduction of different stress states of compression and tension into the ferroelectric thin film. It is hypothesized that these different stress states will have a dramatic effect upon the polarization reversal process, domain nucleation and growth dynamics, as well as the device's overall performance. It is the aim of the research presented in this dissertation to leverage the superior lateral and temporal resolution of the HSPFM technique to observe the influence that a variety of different variables have upon polarization reversal and dynamic ferroelectric domain behavior in attempt to propose conventions in which such variables can be employed for the development of high functioning and overall better operating ferroelectric based devices.
Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan
2015-01-01
Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.
Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.
Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph
2018-05-01
The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.
Imaging Arrays With Improved Transmit Power Capability
Zipparo, Michael J.; Bing, Kristin F.; Nightingale, Kathy R.
2010-01-01
Bonded multilayer ceramics and composites incorporating low-loss piezoceramics have been applied to arrays for ultrasound imaging to improve acoustic transmit power levels and to reduce internal heating. Commercially available hard PZT from multiple vendors has been characterized for microstructure, ability to be processed, and electroacoustic properties. Multilayers using the best materials demonstrate the tradeoffs compared with the softer PZT5-H typically used for imaging arrays. Three-layer PZT4 composites exhibit an effective dielectric constant that is three times that of single layer PZT5H, a 50% higher mechanical Q, a 30% lower acoustic impedance, and only a 10% lower coupling coefficient. Application of low-loss multilayers to linear phased and large curved arrays results in equivalent or better element performance. A 3-layer PZT4 composite array achieved the same transmit intensity at 40% lower transmit voltage and with a 35% lower face temperature increase than the PZT-5 control. Although B-mode images show similar quality, acoustic radiation force impulse (ARFI) images show increased displacement for a given drive voltage. An increased failure rate for the multilayers following extended operation indicates that further development of the bond process will be necessary. In conclusion, bonded multilayer ceramics and composites allow additional design freedom to optimize arrays and improve the overall performance for increased acoustic output while maintaining image quality. PMID:20875996
NASA Astrophysics Data System (ADS)
Kobayashi, T.; Okada, H.; Masuda, T.; Maeda, R.; Itoh, T.
2010-10-01
A digital output piezoelectric accelerometer is proposed to realize an ultra-low power consumption wireless sensor node. The accelerometer has patterned piezoelectric thin films (piezoelectric plates) electrically connected in series accompanied by CMOS switches at the end of some of the piezoelectric plates. The connected piezoelectric plates amplify the output voltage without the use of amplifiers. The CMOS switches turn on when the output voltage of the piezoelectric plates is higher than the CMOS threshold voltage. The piezoelectric accelerometer converts the acceleration into a number of on-state CMOS switches, which can be called the digital output. The proposed digital output piezoelectric accelerometer, using Pb(Zr, Ti)O3 (PZT) thin films as the piezoelectric material, was fabricated through a microelectromechanical system (MEMS) microfabrication process. The output voltage was found to be amplified by the number of connected piezoelectric plates. The DC output voltage obtained by using an AC to DC conversion circuit is proportional to the number of connections. The results show the potential for realizing the proposed digital output piezoelectric accelerometer.
Phenomenological model for coupled multi-axial piezoelectricity
NASA Astrophysics Data System (ADS)
Wei, Yuchen; Pellegrino, Sergio
2018-03-01
A quantitative calibration of an existing phenomenological model for polycrystalline ferroelectric ceramics is presented. The model relies on remnant strain and polarization as independent variables. Innovative experimental and numerical model identification procedures are developed for the characterization of the coupled electro-mechanical, multi-axial nonlinear constitutive law. Experiments were conducted on thin PZT-5A4E plates subjected to cross-thickness electric field. Unimorph structures with different thickness ratios between PZT-5A4E plate and substrate were tested, to subject the piezo plates to coupled electro-mechanical fields. Material state histories in electric field-strain-polarization space and stress-strain-polarization space were recorded. An optimization procedure is employed for the determination of the model parameters, and the calibrated constitutive law predicts both the uncoupled and coupled experimental observations accurately.
Wu, J S; Huang, Y K; Wu, F L; Lin, D Y
2012-08-01
We present a simple but versatile piezoelectric coefficient measurement system, which can measure the longitudinal and transverse piezoelectric coefficients in the pressing and bending modes, respectively, at different applied forces and a wide range of frequencies. The functionality of this measurement system has been demonstrated on three samples, including a PbZr(0.52)Ti(0.48)O(3) (PZT) piezoelectric ceramic bulk, a ZnO thin film, and a laminated piezoelectric film sensor. The static longitudinal piezoelectric coefficients of the PZT bulk and the ZnO film are estimated to be around 210 and 8.1 pC/N, respectively. The static transverse piezoelectric coefficients of the ZnO film and the piezoelectric film sensor are determined to be, respectively, -0.284 and -0.031 C/m(2).
NASA Astrophysics Data System (ADS)
Chen, Feng; Schafranek, Robert; Wachau, André; Zhukov, Sergey; Glaum, Julia; Granzow, Torsten; von Seggern, Heinz; Klein, Andreas
2010-11-01
The influence of Pt, tin-doped In2O3, and RuO2 electrodes on the electrical fatigue of bulk ceramic Pb(Zr,Ti)O3 (PZT) has been studied. Schottky barrier heights at the ferroelectric/electrode interfaces vary by more than one electronvolt for different electrode materials and do not depend on crystallographic orientation of the interface. Despite different barrier heights, hysteresis loops of polarization, strain, permittivity, and piezoelectric constant and the switching kinetics are identical for all electrodes. A 20% reduction in polarization after 106 bipolar cycles is observed for all the samples. In contrast to PZT thin films, the loss of remanent polarization with bipolar switching cycles does not significantly depend on the electrode material.
An optimized strain demodulation method for PZT driven fiber Fabry-Perot tunable filter
NASA Astrophysics Data System (ADS)
Sheng, Wenjuan; Peng, G. D.; Liu, Yang; Yang, Ning
2015-08-01
An optimized strain-demodulation-method based on piezo-electrical transducer (PZT) driven fiber Fabry-Perot (FFP) filter is proposed and experimentally demonstrated. Using a parallel processing mode to drive the PZT continuously, the hysteresis effect is eliminated, and the system demodulation rate is increased. Furthermore, an AC-DC compensation method is developed to address the intrinsic nonlinear relationship between the displacement and voltage of PZT. The experimental results show that the actual demodulation rate is improved from 15 Hz to 30 Hz, the random error of the strain measurement is decreased by 95%, and the deviation between the test values after compensation and the theoretical values is less than 1 pm/με.
NASA Astrophysics Data System (ADS)
Olga, Chichvarina
Ferroelectric thin film capacitor heterostructures have attracted considerable attention in the last decade because of their potential applications in piezoelectric sensors, actuators, power generators and non-volatile memory devices. Strongly correlated all-perovskite oxide heterojunctions are of a particular interest, as their material properties (electronic, structural, magnetic and optical, etc.) can be tuned via doping, interface effect, applied electrical field, and formation of two-dimensional electron gas (2DEG), etc. The right selection of electrode material for this type of capacitor-like structures may modify and enhance the performance of a device, as the electrode/barrier layer interfaces can significantly influence its macroscopic properties. Although there is a number of reports on the effect of electrode interfaces on the properties of PZT capacitors deposited on SRO buffered STO substrate, very little is known about Fe3O4/PZT and AZO/PZT electrode interfaces. This thesis comprises two parts. In the first part we present a systematic study of the structural, transport, magnetic and optical properties of oxide thin films: AZO, Fe3O4 and SRO. These monolayers were fabricated via pulsed laser deposition technique on quartz, MgO and STO substrates respectively. The second part of this thesis elucidates the behaviour of these three oxides as electrode components in PZT/SRO/STO heteroepitaxial structures. The highlights of the work are summarized below: 1) Zinc-blende (ZB) phase of ZnO was predicted to possess higher values of conductivity and higher doping efficiency compared to its wurzite counterpart and thus has greater chances of facilitating the fabrication of ZnO-electrode-based devices. However, zinc-blende is a metastable phase, and it is challenging to obtain single-phase ZB. To tackle this challenge we tuned parameters such-as film thickness, substrate and annealing effect, and achieved a ZB phase of Ti-doped ZnO, ZB-(Zn1-xTix)O thin film. An in-depth systematic study on ZnO zinc-blende formation and the underlying mechanism is presented in Chapter 3 of this work. In addition, this study also looked into the effect of ZnO doping with hydrogen and aluminum. 2) Perpendicular magnetic anisotropy in electrodes is an essential property for the development of certain types of random access memories. In order to study magnetic anisotropy of ferroelectric Fe3O4, we fabricated Fe3O4 epitaxial films of various thicknesses on MgO substrates with different orientations. Fe3O4 thin films on MgO (111)-oriented substrates showed prominent out-of-plane magnetic anisotropy. With the purpose of exploring the mechanism behind this phenomenon, we investigated the role of substrate orientation and film thickness dependency. It was shown that by using the substrates of different orientations and thereby, altering the substrate lattice strain the anisotropy manipulation in Fe3O4, thin films is possible. 3) The last part of the thesis focuses on the performance of AZO/PZT/SRO/STO and Fe3O4/PZT/SRO/STO heterostructures. High quality crystalline films with sharp interfaces and rms surface roughness 1 nm were achieved. Pronounced bipolar switching was observed in both heterostructures. More importantly, it was found that physical properties of Fe3O 4/Pb(Zr0.52Ti0.48)O3/SrRuO3/SrTiO 3 heterostructure can be modulated by introducing Fe2+ and Fe3+ cations into Pb(Zr0.52Ti0.48)O 3 active layer. The sample showed MR signal of 3% after being set into low-resistance state, attributing to the formation of Fe-related semiconductor-like channel in the Pb(Zr0.52Ti0.48)O3 layer. After resetting to high-resistance state, MR signal disappeared due to the rupture of the channel. The results paves the way to the realization of a nonvolatile multiple states Pb(ZrTi)O 3-based hybrid memory.
NASA Astrophysics Data System (ADS)
Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho
2015-07-01
A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.
NASA Astrophysics Data System (ADS)
Lee, Sang Jun
Autonomous structural health monitoring (SHM) systems using active sensing devices have been studied extensively to diagnose the current state of aerospace, civil infrastructure and mechanical systems in near real-time and aims to eventually reduce life-cycle costs by replacing current schedule-based maintenance with condition-based maintenance. This research develops four schemes for SHM applications: (1) a simple and reliable PZT transducer self-sensing scheme; (2) a smart PZT self-diagnosis scheme; (3) an instantaneous reciprocity-based PZT diagnosis scheme; and (4) an effective PZT transducer tuning scheme. First, this research develops a PZT transducer self-sensing scheme, which is a necessary condition to accomplish a PZT transducer self-diagnosis. Main advantages of the proposed self-sensing approach are its simplicity and adaptability. The necessary hardware is only an additional self-sensing circuit which includes a minimum of electric components. With this circuit, the self-sensing parameters can be calibrated instantaneously in the presence of changing operational and environmental conditions of the system. In particular, this self-sensing scheme focuses on estimating the mechanical response in the time domain for the subsequent applications of the PZT transducer self-diagnosis and tuning with guided wave propagation. The most significant challenge of this self-sensing comes from the fact that the magnitude of the mechanical response is generally several orders of magnitude smaller than that of the input signal. The proposed self-sensing scheme fully takes advantage of the fact that any user-defined input signals can be applied to a host structure and the input waveform is known. The performance of the proposed self-sensing scheme is demonstrated by theoretical analysis, numerical simulations and various experiments. Second, this research proposes a smart PZT transducer self-diagnosis scheme based on the developed self-sensing scheme. Conventionally, the capacitance change of the PZT wafer is monitored to identify the abnormal PZT condition because the capacitance of the PZT wafer is linearly proportional to its size and also related to the bonding condition. However, temperature variation is another primary factor that affects the PZT capacitance. To ensure the reliable transducer self-diagnosis, two different self-diagnosis features are proposed to differentiate two main PZT wafer defects, i.e., PZT debonding and PZT cracking, from temperature variations and structural damages. The PZT debonding is identified using two indices based on time reversal process (TRP) without any baseline data. Also, the PZT cracking is identified by monitoring the change of the generated Lamb wave power ratio index with respect to the driving frequency. The uniqueness of this self-diagnosis scheme is that the self-diagnosis features can differentiate the PZT defects from environmental variations and structural damages. Therefore, it is expected to minimize false-alarms which are induced by operational or environmental variations as well as structural damages. The applicability of the proposed self-diagnosis scheme is verified by theoretical analysis, numerical simulations, and experimental tests. Third, a new methodology of guided wave-based PZT transducer diagnosis is developed to identify PZT transducer defects without using prior baseline data. This methodology can be applied when a number of same-size PZT transducers are attached to a target structure to form a sensor network. The advantage of the proposed technique is that abnormal PZT transducers among intact PZT transducers can be detected even when the system being monitored is subjected to varying operational and environmental conditions or changing structural conditions. To achieve this goal, the proposed diagnosis technique utilizes the linear reciprocity of guided wave propagation between a pair of surface-bonded PZT transducers. Finally, a PZT transducer tuning scheme is being developed for selective Lamb wave excitation and sensing. This is useful for structural damage detection based on Lamb wave propagation because the proper transducer size and the corresponding input frequency can be is crucial for selective Lamb wave excitation and sensing. The circular PZT response model is derived, and the energy balance is included for a better prediction of the PZT responses because the existing PZT response models do not consider any energy balance between Lamb wave modes. In addition, two calibration methods are also suggested in order to model the PZT responses more accurately by considering a bonding layer effect. (Abstract shortened by UMI.)
NASA Astrophysics Data System (ADS)
Menou, Nicolas; Funakubo, Hiroshi
2007-12-01
(111)-textured Pb(Zr0.4Ti0.6)O3 films (thickness of ˜120nm) were deposited on (111)-oriented SrRuO3 bottom electrodes by pulse metal organic chemical vapor deposition (MOCVD). PZT single phase was evidenced over a large range of Pb precursor input rate into the MOCVD chamber. In this process window, the good control of the (111) texture of PZT films was confirmed. It is shown that the control of both the composition and orientation of PZT films leads to reproducible electric properties (Pr, Vc, resistance to fatigue) across the process window. Furthermore, the impact of the top electrode chemical nature, elaboration process, and annealing process upon the electric properties was studied systematically.
Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties
NASA Technical Reports Server (NTRS)
Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.
1998-01-01
Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.
NASA Astrophysics Data System (ADS)
Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.
2009-11-01
We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.
NASA Astrophysics Data System (ADS)
Kang, Woojin; Jung, Joontaek; Lee, Wonjun; Ryu, Jungho; Choi, Hongsoo
2018-07-01
Micro-electromechanical system (MEMS) technologies were used to develop a thickness-mode piezoelectric micromachined ultrasonic transducer (Tm-pMUT) annular array utilizing a lead magnesium niobate–lead zirconate titanate (PMN–PZT) single crystal prepared by the solid-state single-crystal-growth method. Dicing is a conventional processing method for PMN–PZT single crystals, but MEMS technology can be adopted for the development of Tm-pMUT annular arrays and has various advantages, including fabrication reliability, repeatability, and a curved element shape. An inductively coupled plasma–reactive ion etching process was used to etch a brittle PMN–PZT single crystal selectively. Using this process, eight ring-shaped elements were realized in an area of 1 × 1 cm2. The resonance frequency and effective electromechanical coupling coefficient of the Tm-pMUT annular array were 2.66 (±0.04) MHz, 3.18 (±0.03) MHz, and 30.05%, respectively, in the air. The maximum positive acoustic pressure in water, measured at a distance of 7.27 mm, was 40 kPa from the Tm-pMUT annular array driven by a 10 Vpp sine wave at 2.66 MHz without beamforming. The proposed Tm-pMUT annular array using a PMN–PZT single crystal has the potential for various applications, such as a fingerprint sensor, and for ultrasonic cell stimulation and low-intensity tissue stimulation.
Characterization of the effective electrostriction coefficients in ferroelectric thin films
NASA Astrophysics Data System (ADS)
Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.
2001-06-01
Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.
High-efficiency integrated piezoelectric energy harvesting systems
NASA Astrophysics Data System (ADS)
Hande, Abhiman; Shah, Pradeep
2010-04-01
This paper describes hierarchically architectured development of an energy harvesting (EH) system that consists of micro and/or macro-scale harvesters matched to multiple components of remote wireless sensor and communication nodes. The micro-scale harvesters consist of thin-film MEMS piezoelectric cantilever arrays and power generation modules in IC-like form to allow efficient EH from vibrations. The design uses new high conversion efficiency thin-film processes combined with novel cantilever structures tuned to multiple resonant frequencies as broadband arrays. The macro-scale harvesters are used to power the collector nodes that have higher power specifications. These bulk harvesters can be integrated with efficient adaptive power management circuits that match transducer impedance and maximize power harvested from multiple scavenging sources with very low intrinsic power consumption. Texas MicroPower, Inc. is developing process based on a composition that has the highest reported energy density as compared to other commercially available bulk PZT-based sensor/actuator ceramic materials and extending it to thin-film materials and miniature conversion transducer structures. The multiform factor harvesters can be deployed for several military and commercial applications such as underground unattended sensors, sensors in oil rigs, structural health monitoring, supply chain management, and battlefield applications such as sensors on soldier apparel, equipment, and wearable electronics.
NASA Astrophysics Data System (ADS)
Patterson, Eric Andrew
Much recent research has focused on the development lead-free perovskite piezoelectrics as environmentally compatible alternatives to lead zirconate titanate (PZT). Two main categories of lead free perovskite piezoelectric ceramic systems were investigated as potential replacements to lead zirconate titanate (PZT) for actuator devices. First, solid solutions based on Li, Ta, and Sb modified (K0.5Na0.5)NbO3 (KNN) lead-free perovskite systems were created using standard solid state methods. Secondly, Bi-based materials a variety of compositions were explored for (1-x)(Bi 0.5Na0.5)TiO3-xBi(Zn0.5Ti0.5)O 3 (BNT-BZT) and Bi(Zn0.5Ti0.5)O3-(Bi 0.5K0.5)TiO3-(Bi0.5Na0.5)TiO 3 (BZT-BKT-BNT). It was shown that when BNT-BKT is combined with increasing concentrations of Bi(Zn1/2i1/2)O3 (BZT), a transition from normal ferroelectric behavior to a material with large electric field induced strains was observed. The higher BZT containing compositions are characterized by large hysteretic strains(> 0.3%) with no negative strains that might indicate domain switching. This work summarizes and analyzes the fatigue behavior of the new generation of Pb-free piezoelectric materials. In piezoelectric materials, fatigue is observed as a degradation in the electromechanical properties under the application of a bipolar or unipolar cyclic electrical load. In Pb-based materials such as lead zirconate titanate (PZT), fatigue has been studied in great depth for both bulk and thin film applications. In PZT, fatigue can result from microcracking or electrode effects (especially in thin films). Ultimately, however, it is electronic and ionic point defects that are the most influential mechanism. Therefore, this work also analyzes the fatigue characteristics of bulk polycrystalline ceramics of the modified-KNN and BNT-BKT-BZT compositions developed. The defect chemistry that underpins the fatigue behavior will be examined and the results will be compared to the existing body of work on PZT. It will be demonstrated that while some Pb-free materials show severe property degradation under cyclic loading, other materials such as BNT-BKT-BZT essentially exhibit fatigue- free piezoelectric properties with chemical doping or other modifications. Based on these results, these new Pb-free materials have great potential for use in piezoelectric applications requiring a large number of drive cycles such as MEMS devices or high frequency actuators.
A three-degree-of-freedom thin-film PZT-actuated microactuator with large out-of-plane displacement.
Choi, Jongsoo; Qiu, Zhen; Rhee, Choong-Ho; Wang, Thomas; Oldham, Kenn
2014-07-01
A novel three degree-of-freedom microactuator based on thin-film lead-zirconate-titanate (PZT) is described with its detailed structural model. Its central rectangular-shaped mirror platform, also referred to as the stage, is actuated by four symmetric PZT bending legs such that each leg provides vertical translation for one corner of the stage. It has been developed to support real-time in vivo vertical cross-sectional imaging with a dual axes confocal endomicroscope for early cancer detection, having large displacements in three axes (z, θ x , θ y ) and a relatively high bandwidth in the z-axis direction. Prototype microactuators closely meet the performance requirements for this application; in the out-of-plane (z-axis) direction, it has shown more than 177 μ m of displacement and about 84 Hz of structural natural frequency, when two diagonal legs are actuated at 14V. With all four legs, another prototype of the same design with lighter stage mass has achieved more than 430 μ m of out-of-plane displacement at 15V and about 200 Hz of bandwidth. The former design has shown approximately 6.4° and 2.9° of stage tilting about the x-axis and y-axis, respectively, at 14V. This paper also presents a modeling technique that uses experimental data to account for the effects of fabrication uncertainties in residual stress and structural dimensions. The presented model predicts the static motion of the stage within an average absolute error of 14.6 μ m, which approaches the desired imaging resolution, 5 μ m, and also reasonably anticipates the structural dynamic behavior of the stage. The refined model will support development of a future trajectory tracking controller for the system.
A three-degree-of-freedom thin-film PZT-actuated microactuator with large out-of-plane displacement
Choi, Jongsoo; Qiu, Zhen; Rhee, Choong-Ho; Wang, Thomas; Oldham, Kenn
2014-01-01
A novel three degree-of-freedom microactuator based on thin-film lead-zirconate-titanate (PZT) is described with its detailed structural model. Its central rectangular-shaped mirror platform, also referred to as the stage, is actuated by four symmetric PZT bending legs such that each leg provides vertical translation for one corner of the stage. It has been developed to support real-time in vivo vertical cross-sectional imaging with a dual axes confocal endomicroscope for early cancer detection, having large displacements in three axes (z, θx, θy) and a relatively high bandwidth in the z-axis direction. Prototype microactuators closely meet the performance requirements for this application; in the out-of-plane (z-axis) direction, it has shown more than 177 μm of displacement and about 84 Hz of structural natural frequency, when two diagonal legs are actuated at 14V. With all four legs, another prototype of the same design with lighter stage mass has achieved more than 430 μm of out-of-plane displacement at 15V and about 200 Hz of bandwidth. The former design has shown approximately 6.4° and 2.9° of stage tilting about the x-axis and y-axis, respectively, at 14V. This paper also presents a modeling technique that uses experimental data to account for the effects of fabrication uncertainties in residual stress and structural dimensions. The presented model predicts the static motion of the stage within an average absolute error of 14.6 μm, which approaches the desired imaging resolution, 5 μm, and also reasonably anticipates the structural dynamic behavior of the stage. The refined model will support development of a future trajectory tracking controller for the system. PMID:25506131
Effect of the Crystal Structure on the Electrical Properties of Thin-Film PZT Structures
NASA Astrophysics Data System (ADS)
Delimova, L. A.; Gushchina, E. V.; Zaitseva, N. V.; Seregin, D. S.; Vorotilov, K. A.; Sigov, A. S.
2018-03-01
A new method of two-stage crystallization of lead zirconate-titanate (PZT) films using a seed sublayer with a low excess lead content has been proposed and realized. A seed layer with a strong texture of perovskite Pe(111) grains is formed from a solution with a lead excess of 0-5 wt %; the fast growth of the grains is provided by the deposition of the main film from a solution with high lead content. As a result, a strong Pe(111) texture with complete suppression of the Pe(100) orientation forms. An analysis of current-voltage dependences of the transient currents and the distributions of the local conductivity measured by the contact AFM method reveals two various mechanisms of current percolation that are determined by traps in the bulk and at the perovskite grain interfaces.
NASA Astrophysics Data System (ADS)
Jeong, Chang Kyu; Han, Jae Hyun; Palneedi, Haribabu; Park, Hyewon; Hwang, Geon-Tae; Joung, Boyoung; Kim, Seong-Gon; Shin, Hong Ju; Kang, Il-Suk; Ryu, Jungho; Lee, Keon Jae
2017-07-01
Flexible piezoelectric energy harvesters have been regarded as an overarching candidate for achieving self-powered electronic systems for environmental sensors and biomedical devices using the self-sufficient electrical energy. In this research, we realize a flexible high-output and lead-free piezoelectric energy harvester by using the aerosol deposition method and the laser lift-off process. We also investigated the comprehensive biocompatibility of the lead-free piezoceramic device using ex-vivo ionic elusion and in vivo bioimplantation, as well as in vitro cell proliferation and histologic inspection. The fabricated LiNbO3-doped (K,Na)NbO3 (KNN) thin film-based flexible energy harvester exhibited an outstanding piezoresponse, and average output performance of an open-circuit voltage of ˜130 V and a short-circuit current of ˜1.3 μ A under normal bending and release deformation, which is the best record among previously reported flexible lead-free piezoelectric energy harvesters. Although both the KNN and Pb(Zr,Ti)O3 (PZT) devices showed short-term biocompatibility in cellular and histological studies, excessive Pb toxic ions were eluted from the PZT in human serum and tap water. Moreover, the KNN-based flexible energy harvester was implanted into a porcine chest and generated up to ˜5 V and 700 nA from the heartbeat motion, comparable to the output of previously reported lead-based flexible energy harvesters. This work can compellingly serve to advance the development of piezoelectric energy harvesting for actual and practical biocompatible self-powered biomedical applications beyond restrictions of lead-based materials in long-term physiological and clinical aspects.
Room-temperature magnetoelectric multiferroic thin films and applications thereof
Katiyar, Ram S; Kuman, Ashok; Scott, James F.
2014-08-12
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Palneedi, Haribabu; Functional Ceramics Group, Korea Institute of Materials Science; Maurya, Deepam
2015-07-06
A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, amore » colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.« less
Yang, Z; Goto, H; Matsumoto, M; Maeda, R
2000-01-01
A micromixer using direct ultrasonic vibration is first reported in this paper. The ultrasonic vibration was induced by a bulk lead-zirconate-titanate (PZT; 5 x 4 x 0.2 mm), which was excited by a 48 kHz square wave at 150 V (peak-to-peak). Liquids were mixed in a chamber (6 x 6 x 0.06 mm) with an oscillating diaphragm driven by the PZT. The oscillating diaphragm was in the size of 6 x 6 x 0.15 mm. Ethanol and water were used to test the mixing effectiveness. The laminar flows of ethanol (115 microL/min) and water (100 microL/min) were mixed effectively when the PZT was excited. The entire process was recorded using a video camera.
NASA Astrophysics Data System (ADS)
Rao, T. Lakshmana; Pradhan, M. K.; Ramakrishna, P. V.; Dash, S.
2018-05-01
Modified-PZT ceramics with a formula Pb0.9Ni0.1[(Zr0.52Ti0.48)]1-xSnxO3 located near the morphotropic phase boundary (MPB) were prepared by conventional solid state process to investigate effects of dilute doping of Ni and Sn in different sites of PZT. The single phase structure of the series of samples has been identified by x-ray diffraction technique. The optical band gap has been obtained from the UV-Vis spectra and found to be shrinkage with doping. The detail dielectric and impedance studies are being carried out to investigate the conduction mechanism of the samples. A significant enhancement in the electric polarization is observed for the maximum Sn doping in a modified PZT.
2003-06-01
micromotor have been investigated. The piezoelectric motor makes use of two orthogonal bending modes of a hollow cylinder. The vibrating element...A.Iino, K.Suzuki, M.Kasuga, M.Suzuki and T.Yamanaka, "Development of a Self- Oscillating Ultrasonic Micromotor and Its Application to a Watch...pp. 823-828, 1997. [12] M. K. Kurosawa, T. Morita, and T. Higuchi, "A Cylindrical Ultrasonic Micromotor Based on PZT Thin Film," IEEE Ultrasonics
NASA Astrophysics Data System (ADS)
Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.
2018-02-01
In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.
NASA Astrophysics Data System (ADS)
Singh, Kirandeep; Kaur, Davinder
2017-04-01
The current study reports the strong magnetoelectric coupling (M-E) in silicon (Si)-integrated ferromagnetic shape memory alloy-based PZT/Ni-Mn-In thin-film multiferroic heterostructure. The strain-mediated nature of converse M-E coupling is reflected from the butterfly-shaped normalized magnetization (M/M s) versus electric field plots. The direct M-E properties of the heterostructure were measured with a frequency of AC magnetic field, bias magnetic field, as well as with temperature. A maximum direct M-E coupling in the bilayered thin-film multiferroic heterostructures occurred at resonance frequencies around the first-order structural transitional temperature of the bottom Ni-Mn-In layer. It was observed that the measuring temperature remarkably affects the direct M-E characteristic of the heterostructure. A large direct ME effect and converse ME effect coefficient α DME ~ 894 mV cm-1.Oe and α CME ~ 2.7 × 10-5 s m-1, respectively, were achieved in the bilayer at room temperature. The mechanism of direct as well as converse M-E effects in the thin-film multiferroic heterostructures is discussed. The electrically driven angular dependence of normalized magnetization (M/M s) reveals the twofold symmetric magnetic anisotropy of the heterostructure, with the drastic shifting of the magnetic hard axis at E > E c (coercivity of PZT).
Dielectric and piezoelectric properties of percolative three-phase piezoelectric polymer composites
NASA Astrophysics Data System (ADS)
Sundar, Udhay
Three-phase piezoelectric bulk composites were fabricated using a mix and cast method. The composites were comprised of lead zirconate titanate (PZT), aluminum (Al) and an epoxy matrix. The volume fraction of the PZT and Al were varied from 0.1 to 0.3 and 0.0 to 0.17, respectively. The influences of three entities on piezoelectric and dielectric properties: inclusion of an electrically conductive filler (Al), poling process (contact and Corona) and Al surface treatment, were observed. The piezoelectric strain coefficient, d33, effective dielectric constant, epsilon r, capacitance, C, and resistivity were measured and compared according to poling process, volume fraction of constituent phases and Al surface treatment. The maximum values of d33 were 3.475 and 1.0 pC/N for Corona and contact poled samples respectively, for samples with volume fractions of 0.40 and 0.13 of PZT and Al (surface treated) respectively. Also, the maximum dielectric constant for the surface treated Al samples was 411 for volume fractions of 0.40 and 0.13 for PZT and Al respectively. The percolation threshold was observed to occur at an Al volume fraction of 0.13. The composites achieved a percolated state for Al volume fractions >0.13 for both contact and corona poled samples. In addition, a comparative time study was conducted to examine the influence of surface treatment processing time of Al particles. The effectiveness of the surface treatment, sample morphology and composition was observed with the aid of SEM and EDS images. These images were correlated with piezoelectric and dielectric properties. PZT-epoxy-aluminum thick films (200 mum) were also fabricated using a two-step spin coat deposition and annealing method. The PZT volume fraction were varied from 0.2, 0.3 and 0.4, wherein the Aluminum volume fraction was varied from 0.1 to 0.17 for each PZT volume fraction, respectively. The two-step process included spin coating the first layer at 500 RPM for 30 seconds, and the second layer at 1000 RPM for 1 minute. The piezoelectric strain coefficients d33 and d31, capacitance and the dielectric constant were measured, and were studied as a function of Aluminum volume fraction.
Engineering Nano-Structured Multiferroic Thin Films
NASA Astrophysics Data System (ADS)
Cheung, Pui Lam
Multiferroics exhibit remarkable tunabilities in their ferromagnetic, ferroelectric and magnetoelectric properties that provide the potential in enabling the control of magnetizations by electric field for the next generation non-volatile memories, antennas and motors. In recent research and developments in integrating single-phase ferroelectric and ferromagnetic materials, multiferroic composite demonstrated a promising magnetoelectric (ME) coupling for future applications. Atomic layer deposition (ALD) technique, on the other hand, allows fabrications of complex multiferroic nanostructures to investigate interfacial coupling between the two materials. In this work, radical-enhanced ALD of cobalt ferrite (CFO) and thermal ALD of lead zirconate titanate (PZT) were combined in fabricating complex multiferroic architectures in investigating the effect of nanostructuring and magnetic shape anisotropy on improving ME coupling. In particular, 1D CFO nanotubes and nanowires; 0D-3D CFO/PZT mesoporous composite; and 1D-1D CFO/PZT core-shell nanowire composite were studied. The potential implementation of nanostructured multiferroic composites into functioning devices was assessed by quantifying the converse ME coupling coefficient. The synthesis of 1D CFO nanostructures was realized by ALD of CFO in anodic aluminum oxide (AAO) membranes. This work provided a simple and inexpensive route to create parallel and high aspect ratio ( 55) magnetic nanostructures. The change in magnetic easy axis of (partially filled) CFO nanotubes from perpendicular to parallel in (fully-filled) nanowires indicated the significance of the geometric factor in controlling magnetizations and ME coupling. The 0D-3D CFO/PZT mesoporous composite demonstrated the optimizations of the strain transfer could be achieved by precise thickness control. 100 nm of mesoporous PZT was synthesized on Pt/TiOx/SiO2/Si using amphiphilic diblock copolymers as a porous ferroelectric template (10 nm pore diameter) for ALD CFO growth. The increased filling of CFO decreased the mechanical flexibility of the composite for electric field induced strain, hence the converse ME coupling was mitigated. The highest converse ME coefficient of 1.2 10-5 Oe-cm/mV was achieved with a 33% pore filling of CFO, in compare to 1 x 10-5 Oe-cm/mV from mesoporous CFO filled with 3 nm of PZT in literature (Chien 2016). Highly directional 1D-1D PZT-core CFO-shell composite in AAO demonstrated the magnetic shape anisotropy could be modulated. The CFO shell thickness allowed the tuning of magnetic easy axis and saturation magnetizations; whereas the PZT volume allowed the optimization of electric field induced strain of the composite. Enhanced converse ME coupling of 1.3 x 10-4 Oe-cm/mV was realized by 5 nm CFO shell on 30 nm of PZT core. In summary, the work has demonstrated nanostructuring of multiferroic composite is an effective pathway to engineer converse ME coupling through optimizations of magnetic shape anisotropy and interfacial strain transfer.
New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.
Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa
2013-04-01
The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.
Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy
Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.
2016-01-01
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638
Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition
NASA Astrophysics Data System (ADS)
Lee, J.; Safari, A.; Pfeffer, R. L.
1992-10-01
Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.
Nanoscale characterization and local piezoelectric properties of lead-free KNN-LT-LS thin films
NASA Astrophysics Data System (ADS)
Abazari, M.; Choi, T.; Cheong, S.-W.; Safari, A.
2010-01-01
We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180° domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient (d33) of the films were calculated using piezoelectric displacement curves and shown to be ~53 pm V-1 for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.
Optimum Operating Conditions for PZT Actuators for Vibrotactile Wearables
NASA Astrophysics Data System (ADS)
Logothetis, Irini; Matsouka, Dimitra; Vassiliadis, Savvas; Vossou, Clio; Siores, Elias
2018-04-01
Recently, vibrotactile wearables have received much attention in fields such as medicine, psychology, athletics and video gaming. The electrical components presently used to generate vibration are rigid; hence, the design and creation of ergonomical wearables are limited. Significant advances in piezoelectric components have led to the production of flexible actuators such as piezoceramic lead zirconate titanate (PZT) film. To verify the functionality of PZT actuators for use in vibrotactile wearables, the factors influencing the electromechanical conversion were analysed and tested. This was achieved through theoretical and experimental analyses of a monomorph clamped-free structure for the PZT actuator. The research performed for this article is a three-step process. First, a theoretical analysis presents the equations governing the actuator. In addition, the eigenfrequency of the film was analysed preceding the experimental section. For this stage, by applying an electric voltage and varying the stimulating electrical characteristics (i.e., voltage, electrical waveform and frequency), the optimum operating conditions for a PZT film were determined. The tip displacement was measured referring to the mechanical energy converted from electrical energy. From the results obtained, an equation for the mechanical behaviour of PZT films as actuators was deduced. It was observed that the square waveform generated larger tip displacements. In conjunction with large voltage inputs at the predetermined eigenfrequency, the optimum operating conditions for the actuator were achieved. To conclude, PZT films can be adapted to assist designers in creating comfortable vibrotactile wearables.
Optimum Operating Conditions for PZT Actuators for Vibrotactile Wearables
NASA Astrophysics Data System (ADS)
Logothetis, Irini; Matsouka, Dimitra; Vassiliadis, Savvas; Vossou, Clio; Siores, Elias
2018-07-01
Recently, vibrotactile wearables have received much attention in fields such as medicine, psychology, athletics and video gaming. The electrical components presently used to generate vibration are rigid; hence, the design and creation of ergonomical wearables are limited. Significant advances in piezoelectric components have led to the production of flexible actuators such as piezoceramic lead zirconate titanate (PZT) film. To verify the functionality of PZT actuators for use in vibrotactile wearables, the factors influencing the electromechanical conversion were analysed and tested. This was achieved through theoretical and experimental analyses of a monomorph clamped-free structure for the PZT actuator. The research performed for this article is a three-step process. First, a theoretical analysis presents the equations governing the actuator. In addition, the eigenfrequency of the film was analysed preceding the experimental section. For this stage, by applying an electric voltage and varying the stimulating electrical characteristics (i.e., voltage, electrical waveform and frequency), the optimum operating conditions for a PZT film were determined. The tip displacement was measured referring to the mechanical energy converted from electrical energy. From the results obtained, an equation for the mechanical behaviour of PZT films as actuators was deduced. It was observed that the square waveform generated larger tip displacements. In conjunction with large voltage inputs at the predetermined eigenfrequency, the optimum operating conditions for the actuator were achieved. To conclude, PZT films can be adapted to assist designers in creating comfortable vibrotactile wearables.
Flexible ultrasonic transducers for structural health monitoring of metals and composites
NASA Astrophysics Data System (ADS)
Kobayashi, M.; Wu, K.-T.; Shih, J.-L.; Jen, C.-K.; Kruger, S. E.
2010-03-01
Flexible ultrasonic transducers (FUTs) which have the on-site installation capability are presented for the non-destructive evaluation (NDE) and structural health monitoring (SHM) purposes. These FUTs consist of 75 μm thick titanium membrane, thick (> 70 μm) thick piezoelectric lead-zirconate-titanate (PZT) composite (PZT-c) films and thin (< 5 μm) thick top electrodes. The PZT-c films are made by a sol-gel spray technique. Such FUT has been glued onto a steel pipe of 101 mm in diameter and 4.5 mm in wall thickness and operated up to 200°C. The glue served as high temperature ultrasonic couplant between the FUT and the external surface of the pipe. The estimated pipe thickness measurement accuracy at 200°C is 34 μm. FUTs also were glued onto the end edge of 2 mm thick aluminum (Al) plates to generate and receive predominantly symmetrical and shear-horizontal (SH) plate acoustic waves (PAWs) to detect simulated line defects at temperature up to 100°C. FUTs glued onto a graphite/epoxy (Gr/Ep) composite are also used for the detection of artificial disbonds. An induction type non-contact method for the evaluation of Al plates and Gr/Ep composites using FUTs is also demonstrated.
Presas, Alexandre; Egusquiza, Eduard; Valero, Carme; Valentin, David; Seidel, Ulrich
2014-07-07
In this paper, PZT actuators are used to study the dynamic behavior of a rotating disk structure due to rotor-stator interaction excitation. The disk is studied with two different surrounding fluids-air and water. The study has been performed analytically and validated experimentally. For the theoretical analysis, the natural frequencies and the associated mode shapes of the rotating disk in air and water are obtained with the Kirchhoff-Love thin plate theory coupled with the interaction with the surrounding fluid. A model for the Rotor Stator Interaction that occurs in many rotating disk-like parts of turbomachinery such as compressors, hydraulic runners or alternators is presented. The dynamic behavior of the rotating disk due to this excitation is deduced. For the experimental analysis a test rig has been developed. It consists of a stainless steel disk (r = 198 mm and h = 8 mm) connected to a variable speed motor. Excitation and response are measured from the rotating system. For the rotating excitation four piezoelectric patches have been used. Calibrating the piezoelectric patches in amplitude and phase, different rotating excitation patterns are applied on the rotating disk in air and in water. Results show the feasibility of using PZT to control the response of the disk due to a rotor-stator interaction.
Dielectric properties of novel polyurethane-PZT-graphite foam composites
NASA Astrophysics Data System (ADS)
Tolvanen, Jarkko; Hannu, Jari; Nelo, Mikko; Juuti, Jari; Jantunen, Heli
2016-09-01
Flexible foam composite materials offer multiple benefits to future electronic applications as the rapid development of the electronics industry requires smaller, more efficient, and lighter materials to further develop foldable and wearable applications. The aims of this work were to examine the electrical properties of three- and four-phase novel foam composites in different conditions, find the optimal mixture for four-phase foam composites, and study the combined effects of lead zirconate titanate (PZT) and graphite fillers. The flexible and highly compressible foams were prepared in a room-temperature mixing process using polyurethane, PZT, and graphite components as well as their combinations, in which air acted as one phase. In three-phase foams the amount of PZT varied between 20 and 80 wt% and the amount of graphite, between 1 and 15 wt%. The four-phase foams were formed by adding 40 wt% of PZT while the amount of graphite ranged between 1 and 15 wt%. The presented results and materials could be utilized to develop new flexible and soft sensor applications by means of material technology.
Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei
2012-12-01
In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.
PZT thin film actuated elastic fin micromotor.
Dubois, M A; Muralt, P
1998-01-01
A piezoelectric elastic fin micromotor based on a PbZr(0.53 )Ti(0.47)O(3) thin film driving a micromachined silicon membrane was fabricated and studied. The stator was characterized by interferometry, and a laser set-up was used to measure the angular velocity and acceleration of the motor. The torque, the output power, and the efficiency of the device were extracted from these measurements. Values up to 1020 rpm and 0.94 microNm were observed for the velocity and the torque, respectively, which would be sufficient for a wristwatch application. The present version exhibited an efficiency of 0.17%, which could theoretically be increased to 4.8%
2011-01-01
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. PMID:21794156
Thin film ferroelectric electro-optic memory
NASA Technical Reports Server (NTRS)
Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)
1993-01-01
An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.
NASA Astrophysics Data System (ADS)
Ghasemifard, M.; Hosseini, S. M.; Bagheri-Mohagheghi, M. M.; Shahtahmasbi, N.
2009-09-01
We have synthesized and were performed a comparison of structures and optical properties between relaxor ferroelectric PMN-PT and PMN-PZT nanopowders. A gel-combustion method has been used to synthesize PMN-PT and PMN-PZT nanocrystalline with the perovskite structure. The precursors employed in the gel-combustion process were lead nitrate, magnesium acetate, niobium ammonium oxalate and zirconium nitrate. The nanopowders were characterized using the X-ray diffraction (XRD) and transmission electron microscopy (TEM) observation. Fourier transform infrared (FTIR) spectroscopy was employed to monitor the transformation of precursor solutions during the thermal reactions leading to the formation of perovskite phase.
NASA Astrophysics Data System (ADS)
Pakizeh, Esmaeil; Moradi, Mahmood
2018-03-01
Ferroelectric Pb(ZrTi)O3 (PZT) nanotubes were prepared by sol-gel method and porous anodic alumina (PAA) membrane using spin-coating technique. This method is based on filling-pyrolysis-filling process and the use of one-stage alumina membranes. One of the advantages of this method is its rapidity, which takes only 1 h time before the calcination step. The effect of repeated pores filling was investigated to get the required size of nanotubes. The field emission scanning electron microscope (FE-SEM) images were shown that the PZT nanotubes have inner diameters in the range of 65-90 nm and length of about 50-60 μm. This means that the samples have a significant aspect ratio (700-800). Also the FE-SEM image confirmed that the highly ordered, hexagonally distributed PAA membranes with the pore diameter about 140-150 nm were formed. The X-ray diffraction (XRD) results showed that the PZT nanotubes have a tetragonal structure. The metal oxide bands like ZrO6 and TiO6 of the final PZT nanotubes were detected by Fourier transform infrared (FT-IR) analysis and confirmed the formation of perovskite structure. By using FT-IR spectroscopy and Kramers-Kronig transformation method, the optical constants like real 𝜀1(ω) and imaginary 𝜀2(ω) parts of dielectric function, extinction coefficient k(ω) and refractive index n(ω) were determined. It was shown that the optical constants of PZT nanotubes are different from PZT nanoparticles.
ZnO Thin Film Electronics for More than Displays
NASA Astrophysics Data System (ADS)
Ramirez, Jose Israel
Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.
Photo electron emission microscopy of polarity-patterned materials
NASA Astrophysics Data System (ADS)
Yang, W.-C.; Rodriguez, B. J.; Gruverman, A.; Nemanich, R. J.
2005-04-01
This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO3 (LNO) single crystals and PbZrTiO3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ~4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ~4.6 eV at the negative domain and ~6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ~300 °C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions.
Yan, Tianhong; Xu, Xinsheng; Han, Jianqiang; Lin, Rongming; Ju, Bingfeng; Li, Qing
2011-01-01
In this paper, a feedback control mechanism and its optimization for rotating disk vibration/flutter via changes of air-coupled pressure generated using piezoelectric patch actuators are studied. A thin disk rotates in an enclosure, which is equipped with a feedback control loop consisting of a micro-sensor, a signal processor, a power amplifier, and several piezoelectric (PZT) actuator patches distributed on the cover of the enclosure. The actuator patches are mounted on the inner or the outer surfaces of the enclosure to produce necessary control force required through the airflow around the disk. The control mechanism for rotating disk flutter using enclosure surfaces bonded with sensors and piezoelectric actuators is thoroughly studied through analytical simulations. The sensor output is used to determine the amount of input to the actuator for controlling the response of the disk in a closed loop configuration. The dynamic stability of the disk-enclosure system, together with the feedback control loop, is analyzed as a complex eigenvalue problem, which is solved using Galerkin’s discretization procedure. The results show that the disk flutter can be reduced effectively with proper configurations of the control gain and the phase shift through the actuations of PZT patches. The effectiveness of different feedback control methods in altering system characteristics and system response has been investigated. The control capability, in terms of control gain, phase shift, and especially the physical configuration of actuator patches, are also evaluated by calculating the complex eigenvalues and the maximum displacement produced by the actuators. To achieve a optimal control performance, sizes, positions and shapes of PZT patches used need to be optimized and such optimization has been achieved through numerical simulations. PMID:22163788
Yan, Tianhong; Xu, Xinsheng; Han, Jianqiang; Lin, Rongming; Ju, Bingfeng; Li, Qing
2011-01-01
In this paper, a feedback control mechanism and its optimization for rotating disk vibration/flutter via changes of air-coupled pressure generated using piezoelectric patch actuators are studied. A thin disk rotates in an enclosure, which is equipped with a feedback control loop consisting of a micro-sensor, a signal processor, a power amplifier, and several piezoelectric (PZT) actuator patches distributed on the cover of the enclosure. The actuator patches are mounted on the inner or the outer surfaces of the enclosure to produce necessary control force required through the airflow around the disk. The control mechanism for rotating disk flutter using enclosure surfaces bonded with sensors and piezoelectric actuators is thoroughly studied through analytical simulations. The sensor output is used to determine the amount of input to the actuator for controlling the response of the disk in a closed loop configuration. The dynamic stability of the disk-enclosure system, together with the feedback control loop, is analyzed as a complex eigenvalue problem, which is solved using Galerkin's discretization procedure. The results show that the disk flutter can be reduced effectively with proper configurations of the control gain and the phase shift through the actuations of PZT patches. The effectiveness of different feedback control methods in altering system characteristics and system response has been investigated. The control capability, in terms of control gain, phase shift, and especially the physical configuration of actuator patches, are also evaluated by calculating the complex eigenvalues and the maximum displacement produced by the actuators. To achieve a optimal control performance, sizes, positions and shapes of PZT patches used need to be optimized and such optimization has been achieved through numerical simulations.
2012-04-01
TRADE NAME, TRADEMARK, MANUFACTURER , OR OTHERWISE, DOES NOT CONSTITUTE OR IMPLY ITS ENDORSEMENT, RECOMMENDATION, OR FAVORING BY THE U.S. GOVERNMENT...TRADE NAMES USE OF TRADE NAMES OR MANUFACTURERS IN THIS REPORT DOES NOT CONSTITUTE AN OFFICIAL ENDORSEMENT OR APPROVAL OF THE USE OF...on Gel-Pak Ready for Noodle Wire Attachment ..................... 10 13. Waveshaper (on Right) Beside a 0.5-Inch Steel Ball
Phase Composition of Samarium Niobate and Tantalate Thin Films Prepared by Sol-Gel Method
NASA Astrophysics Data System (ADS)
Bruncková, H.; Medvecký, Ľ.; Múdra, E.; Kovalčiková, A.; Ďurišin, J.; Šebek, M.; Girman, V.
2017-12-01
Samarium niobate SmNbO4 (SNO) and tantalate SmTaO4 (STO) thin films ( 100 nm) were prepared by sol-gel/spin-coating process on alumina substrates with PZT interlayer and annealing at 1000°C. The precursors of films were synthesized using Nb or Ta tartrate complexes. The improvement of the crystallinity of monoclinic M'-SmTaO4 phase via heating was observed through the coexistence of small amounts of tetragonal T-SmTa7O19 phase in STO precursor at 1000°C. The XRD results of SNO and STO films confirmed monoclinic M-SmNbO4 and M'-SmTaO4 phases, respectively, with traces of orthorhombic O-SmNbO4 (in SNO). In STO film, the single monoclinic M'-SmTaO4 phase was revealed. The surface morphology and topography of thin films were investigated by SEM and AFM analysis. STO film was smoother with roughness 3.2 nm in comparison with SNO (6.3 nm). In the microstructure of SNO film, small spherical ( 50 nm) and larger cuboidal particles ( 100 nm) of the SmNbO4 phase were observed. In STO, compact clusters composed of fine spherical SmTaO4 particles ( 20-50 nm) were found. Effect of samarium can contribute to the formation different polymorphs of these films for the application to environmental electrolytic thin film devices.
NASA Astrophysics Data System (ADS)
Kweon, Hyunkyu; Choi, Sungdae; Kim, Youngsik; Nam, Kiho
Micro UTM (Universal Testing Machines) are becoming increasingly popular for testing the mechanical properties of MEMS materials, metal thin films, and micro-molecule materials1-2. And, new miniature testing machines that can perform in-process measurement in SEM, TEM, and SPM are also needed. In this paper, a new micro UTM with a precision positioning system that can be fine positioning stage. Coarse positioning is implemented by step motor. The size, load output and used in SEM, TEM, and SPM have been proposed. Bimorph type PZT precision actuator is used in displacement output of bimorph type UTM are 109×64×22(mm), about 35g, and 0.4 mm, respectively. And the displacement output is controlled in the block digital form. The results of the analysis and basic properties of positioning system and the UTM system are presented. In addition, the experiment results of in-process measurement during tensile load in SEM and AFM are showed.
Performance of PZT8 Versus PZT4 Piezoceramic Materials in Ultrasonic Transducers
NASA Astrophysics Data System (ADS)
DeAngelis, Dominick A.; Schulze, Gary W.
PZT8 and PZT4 are the common "hard" piezoceramic materials used in power ultrasonic transducers (e.g., welding, cutting, sonar, etc.). PZT8 is perceived as the better choice for resonant devices, primarily due to its higher mechanical quality factor Qm. PZT8 is also considered a "harder" material compared to PZT4, since it has better stability at higher preloads and drive levels. Many transducer designers never consider PZT4 for their applications, even though it has clear advantages such as higher output (i.e., higher d33). Even the perceived advantage of PZT8 regarding Qm may not be significant for most Langevin, bolted stack type transducers if the mechanical joint losses dominate. This research is a case study on the performance of identical ultrasonic transducers used for semiconductor wire bonding, assembled with either PZT8 or PZT4 materials. The main purpose of the study is to establish rule-of-thumb transducer design guidelines for the selection of PZT8 versus PZT4 materials. Several metrics are investigated such as impedance, frequency, capacitance, dielectric loss, Qm, heating, displacement gain, and electro-mechanical coupling factor. The experimental and theoretical research methods include Bode plots, thermal IR camera imaging, scanning laser vibrometry and coupled-field finite element analysis.
Temperature Dependent Electrical Properties of PZT Wafer
NASA Astrophysics Data System (ADS)
Basu, T.; Sen, S.; Seal, A.; Sen, A.
2016-04-01
The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.
NASA Astrophysics Data System (ADS)
Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek
2009-01-01
The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.
Presas, Alexandre; Egusquiza, Eduard; Valero, Carme; Valentin, David; Seidel, Ulrich
2014-01-01
In this paper, PZT actuators are used to study the dynamic behavior of a rotating disk structure due to rotor-stator interaction excitation. The disk is studied with two different surrounding fluids—air and water. The study has been performed analytically and validated experimentally. For the theoretical analysis, the natural frequencies and the associated mode shapes of the rotating disk in air and water are obtained with the Kirchhoff-Love thin plate theory coupled with the interaction with the surrounding fluid. A model for the Rotor Stator Interaction that occurs in many rotating disk-like parts of turbomachinery such as compressors, hydraulic runners or alternators is presented. The dynamic behavior of the rotating disk due to this excitation is deduced. For the experimental analysis a test rig has been developed. It consists of a stainless steel disk (r = 198 mm and h = 8 mm) connected to a variable speed motor. Excitation and response are measured from the rotating system. For the rotating excitation four piezoelectric patches have been used. Calibrating the piezoelectric patches in amplitude and phase, different rotating excitation patterns are applied on the rotating disk in air and in water. Results show the feasibility of using PZT to control the response of the disk due to a rotor-stator interaction. PMID:25004151
NASA Technical Reports Server (NTRS)
Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)
2001-01-01
A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
NASA Technical Reports Server (NTRS)
Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)
2004-01-01
A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
Porous PZT ceramics for receiving transducers.
Kara, Hudai; Ramesh, Rajamani; Stevens, Ron; Bowen, Chris R
2003-03-01
PZT-air (porous PZT) and PZT-polymer (polymer impregnated porous PZT) piezocomposites with varying porosity/polymer volume fractions have been manufactured. The composites were characterized in terms of hydrostatic charge (dh) and voltage (gh) coefficients, permittivity, hydrostatic figure of merit (dh.gh), and absolute sensitivity (M). With decreasing PZT ceramic volume, gh increased, and dh.gh had a broad maximum around 80 to 90% porosity/polymer content. The absolute sensitivity was also increased. In each case, PZT-air piezocomposites performed better than PZT-polymer piezocomposites. Hydrophones constructed from piezocomposites showed slightly lower measured receiving sensitivities than calculated values for piezocomposite materials, which was due to the loading effect of the cable and the low permittivity associated with the piezocomposites.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Hong; Lin, Hua-Tay; Stafford, Mr Randy
2016-01-01
Testing and characterization of large prototype lead zirconate titanate (PZT) stacks present substantial technical challenges to electronic systems. The work in this study shows that an alternative approach can be pursued by using subunits extracted from prototype stacks. Piezoelectric and dielectric integrity was maintained even though the PZT plate specimens experienced an additional loading process involved with the extraction after factory poling. Extracted 10-layer plate specimens were studied by an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 108 cycles, both at room temperature (22 C) and at 50 C. The elevated temperature had amore » defined impact on the fatigue of PZT stacks. About 48 and 28% reductions were observed in the piezoelectric and dielectric coefficients, respectively, after 108 cycles at 50 C, compared with reductions of 25 and 15% in the respective coefficients at 22 C. At the same time, the loss tangent varied to a limited extent. The evolution of PZT electrode interfacial layers or nearby dielectric layers should account for the difference in the fatigue rates of piezoelectric and dielectric coefficients. But the basic contribution to observed fatigue may result from the buildup of a bias field that finally suppressed the motion of the domain walls. Finally, monitoring of dielectric coefficients can be an effective tool for on-line lifetime prediction of PZT stacks in service if a failure criterion is defined properly.« less
Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM
NASA Astrophysics Data System (ADS)
Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling
2009-05-01
The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.
NASA Astrophysics Data System (ADS)
Wang, Hong; Lee, Sung-Min; Lin, Hua-Tay; Stafford, Randy
2016-04-01
Testing and characterization of large prototype lead zirconate titanate (PZT) stacks present substantial technical challenges to electronic systems. The work in this study shows that an alternative approach can be pursued by using subunits extracted from prototype stacks. Piezoelectric and dielectric integrity was maintained even though the PZT plate specimens experienced an additional loading process involved with the extraction after factory poling. Extracted 10-layer plate specimens were studied by an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 108 cycles, both at room temperature (22°C) and at 50°C. The elevated temperature had a defined impact on the fatigue of PZT stacks. About 48 and 28% reductions were observed in the piezoelectric and dielectric coefficients, respectively, after 108 cycles at 50°C, compared with reductions of 25 and 15% in the respective coefficients at 22°C. At the same time, the loss tangent varied to a limited extent. The evolution of PZT-electrode interfacial layers or nearby dielectric layers should account for the difference in the fatigue rates of piezoelectric and dielectric coefficients. But the basic contribution to observed fatigue may result from the buildup of a bias field that finally suppressed the motion of the domain walls. Finally, monitoring of dielectric coefficients can be an effective tool for on-line lifetime prediction of PZT stacks in service if a failure criterion is defined properly.
Stripe-PZT Sensor-Based Baseline-Free Crack Diagnosis in a Structure with a Welded Stiffener.
An, Yun-Kyu; Shen, Zhiqi; Wu, Zhishen
2016-09-16
This paper proposes a stripe-PZT sensor-based baseline-free crack diagnosis technique in the heat affected zone (HAZ) of a structure with a welded stiffener. The proposed technique enables one to identify and localize a crack in the HAZ using only current data measured using a stripe-PZT sensor. The use of the stripe-PZT sensor makes it possible to significantly improve the applicability to real structures and minimize man-made errors associated with the installation process by embedding multiple piezoelectric sensors onto a printed circuit board. Moreover, a new frequency-wavenumber analysis-based baseline-free crack diagnosis algorithm minimizes false alarms caused by environmental variations by avoiding simple comparison with the baseline data accumulated from the pristine condition of a target structure. The proposed technique is numerically as well as experimentally validated using a plate-like structure with a welded stiffener, reveling that it successfully identifies and localizes a crack in HAZ.
Electromechanical modelling for piezoelectric flextensional actuators
NASA Astrophysics Data System (ADS)
Liu, Jinghang; O'Connor, William J.; Ahearne, Eamonn; Byrne, Gerald
2014-02-01
The piezoelectric flextensional actuator investigated in this paper comprises three pre-stressed piezoceramic lead zirconate titanate (PZT) stacks and an external, flexure-hinged, mechanical amplifier configuration. An electromechanical model is used to relate the electrical and mechanical domains, comprising the PZT stacks and the flexure mechanism, with the dynamic characteristics of the latter represented by a multiple degree-of-freedom dynamic model. The Maxwell resistive capacitive model is used to describe the nonlinear relationship between charge and voltage within the PZT stacks. The actuator model parameters and the electromechanical couplings of the PZT stacks, which describe the energy transfer between the electrical and mechanical domains, are experimentally identified without disassembling the embedded piezoceramic stacks. To verify the electromechanical model, displacement and frequency experiments are performed. There was good agreement between modelled and experimental results, with less than 1.5% displacement error. This work outlines a general process by which other pre-stressed piezoelectric flextensional actuators can be characterized, modelled and identified in a non-destructive way.
Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain
NASA Astrophysics Data System (ADS)
Lee, Jung-Kun; Nastasi, Michael
2012-11-01
The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.
Stripe-PZT Sensor-Based Baseline-Free Crack Diagnosis in a Structure with a Welded Stiffener
An, Yun-Kyu; Shen, Zhiqi; Wu, Zhishen
2016-01-01
This paper proposes a stripe-PZT sensor-based baseline-free crack diagnosis technique in the heat affected zone (HAZ) of a structure with a welded stiffener. The proposed technique enables one to identify and localize a crack in the HAZ using only current data measured using a stripe-PZT sensor. The use of the stripe-PZT sensor makes it possible to significantly improve the applicability to real structures and minimize man-made errors associated with the installation process by embedding multiple piezoelectric sensors onto a printed circuit board. Moreover, a new frequency-wavenumber analysis-based baseline-free crack diagnosis algorithm minimizes false alarms caused by environmental variations by avoiding simple comparison with the baseline data accumulated from the pristine condition of a target structure. The proposed technique is numerically as well as experimentally validated using a plate-like structure with a welded stiffener, reveling that it successfully identifies and localizes a crack in HAZ. PMID:27649200
Optimization of PZT ceramic IDT sensors for health monitoring of structures.
Takpara, Rafatou; Duquennoy, Marc; Ouaftouh, Mohammadi; Courtois, Christian; Jenot, Frédéric; Rguiti, Mohamed
2017-08-01
Surface acoustic waves (SAW) are particularly suited to effectively monitoring and characterizing structural surfaces (condition of the surface, coating, thin layer, micro-cracks…) as their energy is localized on the surface, within approximately one wavelength. Conventionally, in non-destructive testing, wedge sensors are used to the generation guided waves but they are especially suited to flat surfaces and sized for a given type material (angle of refraction). Additionally, these sensors are quite expensive so it is quite difficult to leave the sensors permanently on the structure for its health monitoring. Therefore we are considering in this study, another type of ultrasonic sensors, able to generate SAW. These sensors are interdigital sensors or IDT sensors for InterDigital Transducer. This paper focuses on optimization of IDT sensors for non-destructive structural testing by using PZT ceramics. The challenge was to optimize the dimensional parameters of the IDT sensors in order to efficiently generate surface waves. Acoustic tests then confirmed these parameters. Copyright © 2017 Elsevier B.V. All rights reserved.
Piezo-generated charge mapping revealed through direct piezoelectric force microscopy.
Gomez, A; Gich, M; Carretero-Genevrier, A; Puig, T; Obradors, X
2017-10-24
While piezoelectric and ferroelectric materials play a key role in many everyday applications, there are still a number of open questions related to their physics. To enhance our understanding of piezoelectrics and ferroelectrics, nanoscale characterization is essential. Here, we develop an atomic force microscopy based mode that obtains a direct quantitative analysis of the piezoelectric coefficient d 33 . We report nanoscale images of piezogenerated charge in a thick single crystal of periodically poled lithium niobate (PPLN), a bismuth ferrite (BiFO 3 ) thin film, and lead zirconate titanate (PZT) by applying a force and recording the current produced by these materials. The quantification of d 33 coefficients for PPLN (14 ± 3 pC per N) and BFO (43 ± 6 pC per N) is in agreement with the values reported in the literature. Even stronger evidence of the reliability of the method is provided by an equally accurate measurement of the significantly larger d 33 of PZT.
NASA Astrophysics Data System (ADS)
Nguyen, Minh D.; Houwman, Evert; Dekkers, Matthijn; Schlom, Darrell; Rijnders, Guus
2017-07-01
All-oxide free-standing cantilevers were fabricated with epitaxial (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) and Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PNZT) as piezoelectric layers and SrRuO3 electrodes. The ferroelectric and piezoelectric hysteresis loops were measured. From the zero-bias values, the figure-of-merits (FOMs) for piezoelectric energy harvesting systems were calculated. For the PNZT cantilever, an extremely large value FOM = 55 GPa was obtained. This very high value is due to the large shifts of the hysteresis loops such that the zero-bias piezoelectric coefficient e31f is maximum and the zero-bias dielectric constant is strongly reduced compared to the value in the undoped PZT device. The results show that by engineering the self-bias field the energy-harvesting properties of piezoelectric systems can be increased significantly.
NASA Astrophysics Data System (ADS)
Kuwabara, Hiroki; Menou, Nicolas; Funakubo, Hiroshi
2007-05-01
The growth and characterization of epitaxial (111)-oriented Pb(Zr0.35Ti0.65)O3 films deposited by metal organic chemical vapor deposition on (100)-oriented silicon substrates [(111)SrRuO3‖(111)Pt ‖(100)yttria-stabilizedzirconia‖(100)Si] are reported. The orientation, microstructure, and electric properties of these films are compared to those of fiber-textured highly (111)-oriented lead zirconate titanate (PZT) films deposited on (111)SrRuO3/(111)Pt/TiOx/SiO2/(100)Si substrates and epitaxial (111)-oriented PZT films deposited on (111)SrRuO3‖(111)SrTiO3 substrates. The ferroelectric properties of these films are not drastically influenced by the in-plane orientation of the film and by the strain state imposed by the underlying substrate. These results support the use of fiber-textured highly (111)-oriented films in highly stable ferroelectric capacitors.
NASA Astrophysics Data System (ADS)
Liu, B. T.; Zhao, J. W.; Li, X. H.; Zhou, Y.; Bian, F.; Wang, X. Y.; Zhao, Q. X.; Wang, Y. L.; Guo, Q. L.; Wang, L. X.; Zhang, X. Y.
2010-06-01
Both FePt/PbZr0.4Ti0.6O3(PZT)/Pt and Pt/PZT/Pt ferroelectric capacitors have been fabricated on Si substrates. It is found that up to 109 switching cycles, the FePt/PZT/Pt capacitor, measured at 50 kHz, with polarization decreased by 57%, is superior to the Pt/PZT/Pt capacitor by 82%, indicating that an intermetallic FePt top electrode can also improve the fatigue-resistance of a PZT capacitor. Maximum dielectric constants are 980 and 770 for PZT capacitors with FePt and Pt, respectively. This is attributed to the interface effect between PZT film and the top electrode since the interfacial capacitance of FePt/PZT is 3.5 times as large as that of Pt/PZT interface.
An Unconventional Inchworm Actuator Based on PZT/ERFs Control Technology
Liu, Guojun; Zhang, Yanyan; Liu, Jianfang; Li, Jianqiao; Tang, Chunxiu; Wang, Tengfei; Yang, Xuhao
2016-01-01
An unconventional inchworm actuator for precision positioning based on piezoelectric (PZT) actuation and electrorheological fluids (ERFs) control technology is presented. The actuator consists of actuation unit (PZT stack pump), fluid control unit (ERFs valve), and execution unit (hydraulic actuator). In view of smaller deformation of PZT stack, a new structure is designed for actuation unit, which integrates the advantages of two modes (namely, diaphragm type and piston type) of the volume changing of pump chamber. In order to improve the static shear yield strength of ERFs, a composite ERFs valve is designed, which adopts the series-parallel plate compound structure. The prototype of the inchworm actuator has been designed and manufactured in the lab. Systematic test results indicate that the displacement resolution of the unconventional inchworm actuator reaches 0.038 μm, and the maximum driving force and velocity are 42 N, 14.8 mm/s, respectively. The optimal working frequency for the maximum driving velocity is 120 Hz. The complete research and development processes further confirm the feasibility of developing a new type of inchworm actuator with high performance based on PZT actuation and ERFs control technology, which provides a reference for the future development of a new type of actuator. PMID:27022234
An Unconventional Inchworm Actuator Based on PZT/ERFs Control Technology.
Liu, Guojun; Zhang, Yanyan; Liu, Jianfang; Li, Jianqiao; Tang, Chunxiu; Wang, Tengfei; Yang, Xuhao
2016-01-01
An unconventional inchworm actuator for precision positioning based on piezoelectric (PZT) actuation and electrorheological fluids (ERFs) control technology is presented. The actuator consists of actuation unit (PZT stack pump), fluid control unit (ERFs valve), and execution unit (hydraulic actuator). In view of smaller deformation of PZT stack, a new structure is designed for actuation unit, which integrates the advantages of two modes (namely, diaphragm type and piston type) of the volume changing of pump chamber. In order to improve the static shear yield strength of ERFs, a composite ERFs valve is designed, which adopts the series-parallel plate compound structure. The prototype of the inchworm actuator has been designed and manufactured in the lab. Systematic test results indicate that the displacement resolution of the unconventional inchworm actuator reaches 0.038 μm, and the maximum driving force and velocity are 42 N, 14.8 mm/s, respectively. The optimal working frequency for the maximum driving velocity is 120 Hz. The complete research and development processes further confirm the feasibility of developing a new type of inchworm actuator with high performance based on PZT actuation and ERFs control technology, which provides a reference for the future development of a new type of actuator.
Torsional actuator motor using solid freeform fabricated PZT ceramics
NASA Astrophysics Data System (ADS)
Kim, Chulho; Wu, Carl C. M.; Bender, Barry
2004-07-01
A torsional actuator has been developed at NRL utilizing the high piezoelectric shear coefficient, d15. This torsional actuator uses an even number of alternately poled segments of electroactive PZT. Under an applied electric field, the torsional actuator produces large angular displacement and a high torque. The solid freeform fabrication technique of the laminated object manufacturing (LOM) is used for rapid prototyping of torsional actuator with potential cost and time saving. First step to demonstrate the feasibility of the LOM technique for the torsional actuator device fabrication is to make near net shape segments. We report a prototype PZT torsional actuator using LOM prepared PZT-5A segments. Fabrication processes and test results are described. The torsional actuator PZT-5A tube has dimensions of 13 cm long, 2.54 cm OD and 1.9 cm ID. Although the piezoelectric strain is small, it may be converted into large displacement via accumulation of the small single cycle displacements over many cycles using AC driving voltage such as with a rotary 'inchworm' actuator or an ultrasonic rotary motor. A working prototype of a full-cycle motor driven by the piezoelectric torsional actuator has been achieved. The rotational speed is 1,200 rpm under 200 V/cm field at the resonant frequency of 4.5 kHz.
Y3Fe5O12/Na,Bi,Sr-doped PZT particulate magnetoelectric composites
NASA Astrophysics Data System (ADS)
Lisnevskaya, I. V.; Bobrova, I. A.; Lupeiko, T. G.; Agamirzoeva, M. R.; Myagkaya, K. V.
2016-05-01
Magnetoelectric (ME) composites of Na, Bi, Sr substituted lead zirconate titanate (PZT) and yttrium iron garnet having representative formula (100-x) wt% Na,Bi,Sr-doped PZT (PZTNB-1)+x wt% Y3Fe5O12 (YIG) with x=10-90 were manufactured using powdered components obtained through sol-gel processes. It is shown that the decrease in sintering temperature provided by the use of finely dispersed PZTNB-1 and YIG powders allows to significantly reduce content of fluorite-like foreign phase based on zirconium oxide, which forms due to the interfacial interaction during heat treatment and becomes stabilized by yttrium oxide. Connectivity has considerable effect on the value of ME coefficient of composite ceramics. With the same x value, ΔE/ΔH characteristic decreases when changing from 0-3-type structured composites (PZT grains embedded in ferrite matrix) to 3-3-(interpenetrating network of two phases) and especially 3-0-type samples (YIG grains embedded in PZT matrix); in the last case this can be attributed to the substrate clamping effect when ferrite grains are clamped with piezoelectric matrix. ΔE/ΔH value of 0-3 composites with x=40-60 wt% was found to be ∼1.6 mV/(cm Oe).
Study of piezoelectric filler on the properties of PZT-PVDF composites
NASA Astrophysics Data System (ADS)
Matei, Alina; Å¢ucureanu, Vasilica; Vlǎzan, Paulina; Cernica, Ileana; Popescu, Marian; RomaniÅ£an, Cosmin
2017-12-01
The ability to obtain composites with desired functionalities is based on advanced knowledge of the processes synthesis and of the structure of piezoceramic materials, as well the incorporation of different fillers in selected polymer matrix. Polyvinylidene fluoride (PVDF) is a fluorinated polymer with excellent mechanical and electric properties, which it was chosen as matrix due to their applications in a wide range of industrial fields [1-4]. The present paper focuses on the development of composites based on PZT particles as filler obtained by conventional methods and PVDF as polymer matrix. The synthesis of PVDF-PZT composites was obtained by dispersing the ceramic powders in a solution of PVDF in N-methyl-pyrrolidone (NMP) under mechanical mixing and ultrasonication, until a homogenous mixture is obtained. The properties of the piezoceramic fillers before and after embedding into the polymeric matrix were investigated by Fourier transform infrared spectrometry, field emission scanning electron microscopy and X-ray diffraction. In the FTIR spectra, appear a large number of absorption bands which are exclusive of the phases from PVDF matrix confirming the total embedding of PZT filler into matrix. Also, the XRD pattern of the composites has confirmed the presence of crystalline phases of PVDF and the ceramic phase of PZT. The SEM results showed a good distribution of fillers in the matrix.
Wang, Zhihong; Zhu, Weiguang; Zhu, Hong; Miao, Jianmin; Chao, Chen; Zhao, Changlei; Tan, Ooi Kiang
2005-12-01
Ferroelectric microelectromechanical systems (MEMS) has been a growing area of research in past decades, in which ferroelectric films are combined with silicon technology for a variety of applications, such as piezo-electric micromachined ultrasonic transducers (pMUTs), which represent a new approach to ultrasound detection and generation. For ultrasound-radiating applications, thicker PZT films are preferred because generative force and response speed of the diaphragm-type transducers increase with increasing film thickness. However, integration of 4- to 20-microm thick PZT films on silicon wafer, either the deposition or the patterning, is still a bottleneck in the micromachining process. This paper reports on a diaphragm-type pMUT. A composite coating technique based on chemical solution deposition and high-energy ball milled powder has been used to fabricate thick PZT films. Micromachining of the pMUTs using such thick films has been investigated. The fabricated pMUT with crack-free PZT films up to 7-microm thick was evaluated as an ultrasonic transmitter. The generated sound pressure level of up to 120 dB indicates that the fabricated pMUT has very good ultrasound-radiating performance and, therefore, can be used to compose pMUT arrays for generating ultrasound beam with high directivity in numerous applications. The pMUT arrays also have been demonstrated.
Elution of lead from lead zirconate titanate ceramics to acid rain
NASA Astrophysics Data System (ADS)
Tsurumi, Takaaki; Takezawa, Shuhei; Hoshina, Takuya; Takeda, Hiroaki
2017-10-01
The amount of lead that eluted from lead zirconate titanate (PZT) ceramics to artificial acid rain was evaluated. Four kinds of PZT ceramics, namely, pure PZT at MPB composition, CuO-added PZT, PZT with 10 mol % substitution of Ba for Pb, and CuO-added PZT with 10 mol % substitution of Ba for Pb, were used as samples of the elution test. These PZT ceramics of 8 mm2 and 1.1-1.2 mm thickness were suspended in 300 ml of H2SO4 solution of pH 4.0. The concentration of lead eluted from PZT was in the range from 0.2 to 0.8 ppm. It was found that both liquid phase formation by the addition of CuO and the substitution of Ba for Pb were effective to reduce the amount of lead that eluted. By fitting the leaching out curve with a classical equation, a master curve assuming no sampling effect was obtained. The lead concentration evaluated from the amount of lead that eluted from a commercial PZT plate to H2SO4 solution of pH 5.3 was almost the same as the limit in city water. It is concluded that PZT is not harmful to health and the environment and the amount of lead that eluted from PZT can be controlled by modifying PZT composition.
Manufacturing of PZT-nickel functionally graded piezoelectric ceramics
NASA Astrophysics Data System (ADS)
Rubio, Wilfredo M.; Silva, Emílio C. N.; Buiochi, Flávio
2012-05-01
A recent approach for designing and manufacturing piezoelectric ceramics consists of using the functionally graded materials (FGM) concept. In this work, nickel (Ni) is used to generate a new PZT-Ni graded ceramic and its dynamic behavior is experimentally explored. The PZT-Ni graded ceramic is manufactured by using the technique of Spark Plasma Sintering (SPS). The ceramic is graded from the top to the bottom surface (along 6 mm of thickness). Specifically, five layers of green powders are sintered: 100 wt% PZT-5A, 90 wt% PZT-5A and 10 wt% Ni, 80 wt% PZT-5A and 20 wt% Ni, 70 wt% PZT-5A and 30 wt% Ni, 60 wt% PZT-5A and 40 wt% Ni. Thus, Ni is used as a second phase, which is added to a PZT-5A matrix, changing its concentration. No manufacturing defects or cracks or exfoliated layers are observed. However, graphite diffusion is observed from the graphite die into the graded ceramic, which does not affect its performance; hence, the ceramic contains enough piezoelectric properties, which allows its polarization and dynamic characterization by determining the impedance curve of the PZT-Ni graded ceramic. The PZT-Ni graded ceramic vibrates at 1.04 MHz, 1.55 MHz and 2.07 MHz.
2008-12-01
manufacturing variability and thermal effects can be easi- ly compensated for electronically during operation by adjusting PZT amplitudes and phases... thermal and optical processes in the PEM bar and PZT array. An interface between COMSOL and the Trilinos solvers running in parallel on the cluster was...contaminants of low vapor pressure and/or low intrinsic fluorescence. Thermal luminescence (TL) is a technology aimed at solving the standoff
Long Term Stability in Thin Film Ferroelectric Memories
1992-09-29
concentration is adjusted to IM. IM PT stock solution is prepared from Pb acetate and Ti isopropoxide dissolved in 2-MOE, and is added to the PMN stock...is necessary to understand that defect chemistry in detail. While PbTi0 3, PbZrO3 , and their solid- solutions , PZT, have not been thoroughly studied...methoxyethanol (2-MOE) is added. The ethanol and excess 2-MOE are removed by distillation. Pb precursor solution (Pb acetate in 2-MOE) is added and the 13
NASA Astrophysics Data System (ADS)
Poullain, Gilles; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid
2017-01-01
TbxDy1-xFe2/Pt/Pb(Zrx, Ti1-x)O3 thin films were grown on Pt/TiO2/SiO2/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient αΗΜΕ was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large αΗΜΕ of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance.
Large displacement vertical translational actuator based on piezoelectric thin films.
Qiu, Zhen; Pulskamp, Jeffrey S; Lin, Xianke; Rhee, Choong-Ho; Wang, Thomas; Polcawich, Ronald G; Oldham, Kenn
2010-07-01
A novel vertical translational microactuator based on thin-film piezoelectric actuation is presented, using a set of four compound bend-up/bend-down unimorphs to produce translational motion of a moving platform or stage. The actuation material is a chemical-solution deposited lead-zirconate-titanate (PZT) thin film. Prototype designs have shown as much as 120 μ m of static displacement, with 80-90 μ m displacements being typical, using four 920 μ m long by 70 μ m legs. Analytical models are presented that accurately describe nonlinear behavior in both static and dynamic operation of prototype stages when the dependence of piezoelectric coefficients on voltage is known. Resonance of the system is observed at a frequency of 200 Hz. The large displacement and high bandwidth of the actuators at low-voltage and low-power levels should make them useful to a variety of optical applications, including endoscopic microscopy.
Comparative face-shear piezoelectric properties of soft and hard PZT ceramics
NASA Astrophysics Data System (ADS)
Miao, Hongchen; Chen, Xi; Cai, Hairong; Li, Faxin
2015-12-01
The face-shear ( d 36 ) mode may be the most practical shear mode in piezoelectrics, while theoretically this mode cannot appear in piezoelectric ceramics because of its transversally isotropic symmetry. Recently, we realized piezoelectric coefficient d 36 up to 206pC/N in soft PbZr1-xTixO3 (PZT) ceramics via ferroelastic domain engineering [H. C. Miao and F. X. Li, Appl. Phys. Lett. 107, 122902 (2015)]. In this work, we further realized the face-shear mode in both hard and soft PZT ceramics including PZT-4 (hard), PZT-51(soft), and PZT-5H (soft) and investigated the electric properties systematically. The resonance methods are derived to measure the d 36 coefficients using both square patches and narrow bar samples, and the obtained values are consistent with that measured by a modified d 33 meter previously. For all samples, the pure d 36 mode can only appear near the resonance frequency, and the coupled d 36 - d 31 mode dominates off resonance. It is found that both the piezoelectric coefficient d 36 and the electromechanical coupling factor k 36 of soft PZT ceramics (PZT-5H and PZT-51) are considerably larger than those of the hard PZT ceramics (PZT-4). The obtained d 36 of 160-275pC/N, k 36 ˜ 0.24, and the mechanical quality factor Q 36 of 60-90 in soft PZT ceramics are comparable with the corresponding properties of the d 31 mode sample. Therefore, the d 36 mode in modified soft PZT ceramics is more promising for industrial applications such as face-shear resonators and shear horizontal wave generators.
NASA Astrophysics Data System (ADS)
Xu, Ling-Fang; Feng, Xing; Sun, Kang; Liang, Ze-Yu; Xu, Qian; Liang, Jia-Yu; Yang, Chang-Ping
2017-07-01
Sandwich magnetoelectric composites of PZT/NFO/PZT (PNP) have been prepared by laminating PZT5, NiFe2O4, and PZT5 ceramics in turn with polyvinyl alcohol (PVA) paste. A systematic study of structural, magnetic and ferroelectric properties is undertaken. Structural studies carried out by X-ray diffraction indicate formation of cubic perovskite phase of PZT5 ceramic and cubic spinel phase of NiFe2O4 ceramic. As increasing the content of PZT5 phase, ferroelectric loops and magnetic loops of PNP composites showed increasing remnant electric polarizations and decreasing remnant magnetic moments separately. Both external magnetic fields and bias voltages could regulate the basal radial resonance frequency of the composites, which should be originated with the transformation and coupling of the stress between the piezoelectric phase and magnetostrictive phase. Such magnetoelectric composite provides great opportunities for electrostatically tunable devices.
NASA Astrophysics Data System (ADS)
Chen, Xinwei; He, Shengnan; Li, Dandan; Wang, Kai; Fan, Yan'en; Wu, Shuai
2014-11-01
We present an optical fiber voltage sensor by Michelsion interferometer (MI) employing a Fabry-Perot (F-P) interferometer and the DC phase tracking (DCPT) signal processing method. By mounting a MI fabricated by an optical fiber coupler on a piezoelectric (PZT) transducer bar, a dynamic strain would be generated to change the optical path difference (OPD) of the interferometer when the measured voltage was applied on the PZT. Applying an F-P interferometer to demodulate the optical intensity variation output of the MI, the voltage can be obtained. The experiment results show that the relationship between the optical intensity variation and the voltage applied on the PZT is approximately linear. Furthermore, the phase generate carrier (PGC) algorithm was applied to demodulate the output of the sensor also.
NASA Astrophysics Data System (ADS)
Sun, Hu; Zhang, Aijia; Wang, Yishou; Qing, Xinlin P.
2017-04-01
Guided wave-based structural health monitoring (SHM) has been given considerable attention and widely studied for large-scale aircraft structures. Nevertheless, it is difficult to apply SHM systems on board or online, for which one of the most serious reasons is the environmental influence. Load is one fact that affects not only the host structure, in which guided wave propagates, but also the PZT, by which guided wave is transmitted and received. In this paper, numerical analysis using finite element method is used to study the load effect on guided wave acquired by PZT. The static loads with different grades are considered to analyze its effect on guided wave signals that PZT transmits and receives. Based on the variation trend of guided waves versus load, a load compensation method is developed to eliminate effects of load in the process of damage detection. The probabilistic reconstruction algorithm based on the signal variation of transmitter-receiver path is employed to identify the damage. Numerical tests is conducted to verify the feasibility and effectiveness of the given method.
Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Yu Jin; Park, Min Hyuk; Jeon, Woojin
2015-12-14
Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasingmore » AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.« less
Nguyen, Minh D; Houwman, Evert P; Rijnders, Guus
2017-10-10
Thin films of PbZr 0 . 52 Ti 0 . 48 O 3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca 2 Nb 3 O 10 nanosheets as growth template and using LaNiO 3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain and ultra-low strain hysteresis. The observed increase of the piezoelectric coefficient with increasing film thickness is attributed to the reduction of clamping, because of the increasingly less dense columnar microstructure (more separation between the grains) with across the film thickness. A very large piezoelectric coefficient (490 pm/V) and a high piezoelectric strain (~0.9%) are obtained in 4-µm-thick film under an applied electric field of 200 kV/cm, which is several times larger than in usual PZT ceramics. Further very low strain hysteresis (H≈2-4%) is observed in 4 to 5 µm thick films. These belong to the best values demonstrated so far in piezoelectric films. Fatigue testing shows that the piezoelectric properties are stable up to 10 10 cycles. The growth of high quality PZT films with very large strain and piezoelectric coefficients, very low hysteresis and with long-term stability on a technologically important substrate as glass is of great significance for the development of practical piezo driven microelectromechanical actuator systems.
Rad, Maryam Alsadat; Tijjani, Auwal Shehu; Ahmad, Mohd Ridzuan; Auwal, Shehu Muhammad
2016-12-23
This paper proposes a new technique for real-time single cell stiffness measurement using lead zirconate titanate (PZT)-integrated buckling nanoneedles. The PZT and the buckling part of the nanoneedle have been modelled and validated using the ABAQUS software. The two parts are integrated together to function as a single unit. After calibration, the stiffness, Young's modulus, Poisson's ratio and sensitivity of the PZT-integrated buckling nanoneedle have been determined to be 0.7100 N·m -1 , 123.4700 GPa, 0.3000 and 0.0693 V·m·N -1 , respectively. Three Saccharomyces cerevisiae cells have been modelled and validated based on compression tests. The average global stiffness and Young's modulus of the cells are determined to be 10.8867 ± 0.0094 N·m -1 and 110.7033 ± 0.0081 MPa, respectively. The nanoneedle and the cell have been assembled to measure the local stiffness of the single Saccharomyces cerevisiae cells The local stiffness, Young's modulus and PZT output voltage of the three different size Saccharomyces cerevisiae have been determined at different environmental conditions. We investigated that, at low temperature the stiffness value is low to adapt to the change in the environmental condition. As a result, Saccharomyces cerevisiae becomes vulnerable to viral and bacterial attacks. Therefore, the proposed technique will serve as a quick and accurate process to diagnose diseases at early stage in a cell for effective treatment.
Improving yield of PZT piezoelectric devices on glass substrates
NASA Astrophysics Data System (ADS)
Johnson-Wilke, Raegan L.; Wilke, Rudeger H. T.; Cotroneo, Vincenzo; Davis, William N.; Reid, Paul B.; Schwartz, Daniel A.; Trolier-McKinstry, Susan
2012-10-01
The proposed SMART-X telescope includes adaptive optics systems that use piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. Several processing constraints are imposed by current designs: the crystallization temperature must be kept below 550 °C, the total stress in the film must be minimized, and the yield on 1 cm2 actuator elements should be < 90%. For this work, RF magnetron sputtering was used to deposit films since chemical solution deposition (CSD) led to warping of large area flexible glass substrates. A PZT 52/48 film that wasdeposited at 4 mTorr and annealed at 550 °C for 24 hours showed no detectable levels of either PbO or pyrochlore second phases. Large area electrodes (1cm x 1 cm) were deposited on 4" glass substrates. Initially, the yield of the devices was low, however, two methods were employed to increase the yield to near 100 %. The first method included a more rigorous cleaning to improve the continuity of the Pt bottom electrode. The second method was to apply 3 V DC across the capacitor structure to burn out regions of defective PZT. The result of this latter method essentially removed conducting filaments in the PZT but left the bulk of the material undamaged. By combining these two methods, the yield on the large area electrodes improved from < 10% to nearly 100%.
Li, Rui; Zhou, Jun; Liu, Hujun; Pei, Jianzhong
2017-01-01
Piezoelectric lead zirconatetitanate (PZT)/polymer composites were prepared by two typical polymer matrixes using the hot-press method. The micromorphology, microstructure, dielectric properties, and piezoelectric properties of the PZT/polymer composites were characterized and investigated. The results showed that when the condition of frequency is 103 Hz, the dielectric and piezoelectric properties of PZT/poly(vinylidene fluoride) were both better than that of PZT/polyvinyl chloride (PVC). When the volume fraction of PZT was 50%, PZT/PVDF prepared by the hot-press method had better comprehensive electric property. PMID:28805730
Thin-disk piezoceramic ultrasonic motor. Part I: design and performance evaluation.
Wen, Fuh Liang; Yen, Chi Yung; Ouyang, Minsun
2003-08-01
The purpose of this study is to gain the knowledge and experience in the design of thin-disk piezoceramic-driving ultrasonic actuator dedicated. In this paper, the design and construction of an innovative ultrasonic actuator is developed as a stator, which is a composite structure consisting of piezoceramic (PZT) membrane bonded on a metal sheet. Such a concentric PZT structure possesses the electrical and mechanical coupling characteristics in flexural wave. The driving ability of the actuator comes from the mechanical vibration of extension and shrinkage of a metal sheet due to the converse piezoelectric effect, corresponding to the frequency of a single-phase AC power. By applying the constraints on the specific geometry positions on the metal sheet, the various behaviors of flexural waves have been at the different directions. The rotor is impelled by the actuator with rotational speeds of 600 rpm in maximum using a friction-contact mechanism. Very high actuating and braking abilities are obtained. This simple and inexpensive structure of actuator demonstrates that the mechanical design of actuator and rotor could be done separately and flexibly according to the requirements for various applications. And, its running accuracy and positioning precision are described in Part II.A closed loop servo positioning control i.e. sliding mode control (SMC) is used to compensate automatically for nonlinearly mechanical behaviors such as dry friction, ultrasonic vibrating, slip-stick phenomena. Additionally, SMC scheme has been successfully applied to position tracking to prove the excellent robust performance in noise rejection.
Revathi, S; Kennedy, L John; Basha, S K Khadheer; Padmanabhan, R
2018-07-01
Nanostructured PbZr0.52Ti0.48O3 (PZT) powder was synthesized at 500 °C-800 °C using sol-gel route. X-ray diffraction and Rietveld analysis confirmed the formation of perovskite structure. The sample heat treated at 800 °C alone showed the formation of morphotropic phase boundary with coexistence of tetragonal and rhombohedral phase. The PZT powder and PVDF were used in 0-3 connectivity to form the PZT/PVDF composite film using solvent casting method. The composite films containing 10%, 50%, 70% and 80% volume fraction of PZT in PVDF were fabricated. The XRD spectra validated that the PZT structure remains unaltered in the composites and was not affected by the presence of PVDF. The scanning electron microscopy images show good degree of dispersion of PZT in PVDF matrix and the formation of pores at higher PZT loading. The quantitative analysis of elements and their composition were confirmed from energy dispersive X-ray analysis. The optical band gap of the PVDF film is 3.3 eV and the band gap decreased with increase in volume fraction of PZT fillers. The FTIR spectra showed the bands corresponding to different phases of PVDF (α, β, γ) and perovskite phase of PZT. The thermogravimetric analysis showed that PZT/PVDF composite films showed better thermal stability than the pure PVDF film and hydrophobicity. The dielectric constant was measured at frequency ranging from 1 Hz to 6 MHz and for temperature ranging from room temperature to 150 °C. The composite with 50% PZT filler loading shows the maximum dielectric constant at the studied frequency and temperature range with flexibility.
A-site stoichiometry and piezoelectric response in thin film PbZr 1-xTi xO 3
Marincel, Dan; Jesse, Stephen; Belianinov, Alex; ...
2015-05-29
Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization electric field hysteresis loops and piezoelectric coefficient e 31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements ofmore » the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low« less
A hybrid ferroelectric-flash memory cells
NASA Astrophysics Data System (ADS)
Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki
2014-09-01
A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.
Dynamic Modelling of Embeddable Piezoceramic Transducers
Li, Xu; Li, Hongnan; Wang, Zhijie; Song, Gangbing
2017-01-01
Embedded Lead Zirconate Titanate (PZT) transducers have been widely used in research related to monitoring the health status of concrete structures. This paper presents a dynamic model of an embeddable PZT transducer with a waterproof layer and a protecting layer. The proposed model is verified by finite-element method (FEM). Based on the proposed model, the factors influencing the dynamic property of the embeddable PZT transducers, which include the material and thickness of the protecting layer, the material and thickness of the waterproof layer, and the thickness of the PZT, are analyzed. These analyses are further validated by a series of dynamic stress transfer experiments on embeddable PZT transducers. The results show that the excitation frequency can significantly affect the stress transfer of the PZT transducer in terms of both amplitude and signal phase. The natural frequency in the poling direction for the PZT transducer is affected by the material properties and the thickness of the waterproof and protecting layers. The studies in this paper will provide a scientific basis to design embeddable PZT transducers with special functions. PMID:29206150
Lattice strain induced multiferroicity in PZT-CFO particulate composite
NASA Astrophysics Data System (ADS)
Pradhan, Lagen Kumar; Pandey, Rabichandra; Kumar, Rajnish; Kar, Manoranjan
2018-02-01
Lead Zirconate Titanate [Pb(Zr0.52Ti0.48)O3/PZT] and Cobalt Ferrite [CoFe2O4/CFO] based multiferroic composites [(1-x)PZT-(x)CFO] with (x = 0.10-0.40) have been prepared to study its magnetoelectric (ME) and multiferroic properties. X-ray diffraction method along with the Rietveld refinement technique reveals that the crystal symmetries corresponding to PZT and CFO exist independently in the composites. The effect of interfacial strain on lattice distortion in PZT has been observed. It is well correlated with the magnetoelectric coupling of the composites. Dispersion behavior of dielectric constant with frequency can be explained by the modified Debye model. Different relaxation phenomena have been observed in PZT-CFO particulate composites. The ferroelectric properties of composites decrease with the increase in percentage of CFO in the composite. Both saturation (Ms) and remanent (Mr) magnetization increase with the increase in CFO content in the composite. The maximum ME coupling was found to be 1.339 pC/cm2 Oe for the composition (0.80) PZT-(0.20) CFO at the application of maximum magnetic field of 50 Oe. The multiferroic properties in CFO-PZT can be explained by the lattice strain at the CFO-PZT interfaces.
Rad, Maryam Alsadat; Tijjani, Auwal Shehu; Ahmad, Mohd Ridzuan; Auwal, Shehu Muhammad
2016-01-01
This paper proposes a new technique for real-time single cell stiffness measurement using lead zirconate titanate (PZT)-integrated buckling nanoneedles. The PZT and the buckling part of the nanoneedle have been modelled and validated using the ABAQUS software. The two parts are integrated together to function as a single unit. After calibration, the stiffness, Young’s modulus, Poisson’s ratio and sensitivity of the PZT-integrated buckling nanoneedle have been determined to be 0.7100 N·m−1, 123.4700 GPa, 0.3000 and 0.0693 V·m·N−1, respectively. Three Saccharomyces cerevisiae cells have been modelled and validated based on compression tests. The average global stiffness and Young’s modulus of the cells are determined to be 10.8867 ± 0.0094 N·m−1 and 110.7033 ± 0.0081 MPa, respectively. The nanoneedle and the cell have been assembled to measure the local stiffness of the single Saccharomyces cerevisiae cells The local stiffness, Young’s modulus and PZT output voltage of the three different size Saccharomyces cerevisiae have been determined at different environmental conditions. We investigated that, at low temperature the stiffness value is low to adapt to the change in the environmental condition. As a result, Saccharomyces cerevisiae becomes vulnerable to viral and bacterial attacks. Therefore, the proposed technique will serve as a quick and accurate process to diagnose diseases at early stage in a cell for effective treatment. PMID:28025571
ac conductivity in Gd doped Pb(Zr0.53Ti0.47)O3 ceramics
NASA Astrophysics Data System (ADS)
Portelles, J.; Almodovar, N. S.; Fuentes, J.; Raymond, O.; Heiras, J.; Siqueiros, J. M.
2008-10-01
This study is focused in the conduction processes taking place in 0.6 wt % Gd doped lead zirconate titanate samples PbZr0.53Ti0.47O3:Gd (PZT53/47:Gd) in the vicinity of the morphotropic phase boundary. Doped samples show very large dielectric permittivity with respect to that of undoped ones near the transition temperature. The frequency dependent ac conductivity of PZT53/47:Gd ceramics was studied in the 30-450 °C temperature range. X-ray diffraction analyses indicate the incorporation of Gd atoms to the structure. The changes in the dielectric properties as functions of temperature of the doped samples are taken as additional evidence of the incorporation of Gd into the crystal structure. Gd acts as donor center promoting extrinsic n-type conduction. The ac conductivity behavior obeys Jonscher universal relation in the 100 Hz-1 MHz frequency range for temperatures between 30 and 300 °C. The measured conductivity values for Gd doped PZT53/47 are higher than those of pure PZT53/47. According to the correlated barrier hopping model, the preponderant conduction mechanism in the frequency-temperature response was recognized as small polarons hopping mechanism.
NASA Astrophysics Data System (ADS)
Sayar, Ersin; Farouk, Bakhtier
2012-07-01
Coupled multifield analysis of a piezoelectrically actuated valveless micropump device is carried out for liquid (water) transport applications. The valveless micropump consists of two diffuser/nozzle elements; the pump chamber, a thin structural layer (silicon), and a piezoelectric layer, PZT-5A as the actuator. We consider two-way coupling of forces between solid and liquid domains in the systems where actuator deflection causes fluid flow and vice versa. Flow contraction and expansion (through the nozzle and the diffuser respectively) generate net fluid flow. Both structural and flow field analysis of the microfluidic device are considered. The effect of the driving power (voltage) and actuation frequency on silicon-PZT-5A bi-layer membrane deflection and flow rate is investigated. For the compressible flow formulation, an isothermal equation of state for the working fluid is employed. The governing equations for the flow fields and the silicon-PZT-5A bi-layer membrane motions are solved numerically. At frequencies below 5000 Hz, the predicted flow rate increases with actuation frequency. The fluid-solid system shows a resonance at 5000 Hz due to the combined effect of mechanical and fluidic capacitances, inductances, and damping. Time-averaged flow rate starts to drop with increase of actuation frequency above (5000 Hz). The velocity profile in the pump chamber becomes relatively flat or plug-like, if the frequency of pulsations is sufficiently large (high Womersley number). The pressure, velocity, and flow rate prediction models developed in the present study can be utilized to optimize the design of MEMS based micropumps.
Zhang, Q M; Zhao, J
1999-01-01
In lead zirconate titanate piezoceramics, external stresses can cause substantial changes in the piezoelectric coefficients, dielectric constant, and elastic compliance due to nonlinear effects and stress depoling effects. In both soft and hard PZT piezoceramics, the aging can produce a memory effect that will facilitate the recovery of the poled state in the ceramics from momentary electric or stress depoling. In hard PZT ceramics, the local defect fields built up during the aging process can stabilize the ceramic against external stress depoling that results in a marked increase in the piezoelectric coefficient and electromechanical coupling factor in the ceramic under the stress. Although soft PZT ceramics can be easily stress depoled (losing piezoelectricity), a DC bias electric field, parallel to the original poling direction, can be employed to maintain the ceramic poling state so that the ceramic can be used at high stresses without depoling.
NASA Astrophysics Data System (ADS)
Endo, Akito; Kawashima, Norimichi; Takeuchi, Shinichi; Ishikawa, Mutsuo; Kurosawa, Minoru Kuribayashi
2007-07-01
We deposited a lead zirconate titanete (PZT) polycrystalline film on a titanium substrate by the hydrothermal method and fabricated a transducer using the PZT film for use as an ultrasound probe. A 10 MHz miniature one-dimensional-array medical ultrasound probe containing the PZT film was developed. After sputtering titanium on the surface of a hydroxyapatite substrate, the titanium film on the substrate was etched by the photolithography to form a one-dimensional titanium film electrode array. We could thus fabricate a miniature one-dimensional-array ultrasound probe by the hydrothermal method. Transmitted ultrasound pulses from a 10 MHz commercial ultrasound probe were received by the newly fabricated one-dimensional-array ultrasound probe. The fabrication process of the probe and the results of experiments on receiving waveforms were reported in this paper.
Wen, Jianqiang; Liu, Meili
2014-03-01
Electrical stimulation is critical for axonal connection, which can stimulate axonal migration and deformation to promote axonal growth in the nervous system. Netrin-1, an axonal guidance cue, can also promote axonal guidance growth, but the molecular mechanism of axonal guidance growth under indirect electric stimulation is still unknown. We investigated the molecular mechanism of axonal guidance growth under piezoelectric ceramic lead zirconate titanate (PZT) stimulation in the primary cultured cortical neurons. PZT induced marked axonal elongation. Moreover, PZT activated the excitatory postsynaptic currents (EPSCs) by increasing the frequency and amplitude of EPSCs of the cortical neurons in patch clamp assay. PZT downregulated the expression of Netrin-1 and its receptor Deleted in Colorectal Cancer (DCC). Rho GTPase signaling is involved in interactions of Netrin-1 and DCC. PZT activated RhoA. Dramatic decrease of Cdc42 and Rac1 was also observed after PZT treatment. RhoA inhibitor Clostridium botulinum C3 exoenzyme (C3-Exo) prevented the PZT-induced downregulation of Netrin-1 and DCC. We suggest that PZT can promote axonal guidance growth by downregulation of Netrin-1 and DCC to mediate axonal repulsive responses via the Rho GTPase signaling pathway. Obviously, piezoelectric materials may provide a new approach for axonal recovery and be beneficial for clinical therapy in the future.
Flexoelectricity in PZT Nanoribbons and Biomembranes
2015-01-09
Flexoelectricity in PZT Nanoribbons and Biomembranes The objective of this grant was to study flexoelectric phenomena in solids and in biomembranes...Flexoelectricity in PZT Nanoribbons and Biomembranes Report Title The objective of this grant was to study flexoelectric phenomena in solids and...producing PZT nanoribbons for energy harvesters. (a) Papers published in peer-reviewed journals (N/A for none) Enter List of papers submitted or
A new traveling wave ultrasonic motor using thick ring stator with nested PZT excitation.
Chen, Weishan; Shi, Shengjun; Liu, Yingxiang; Li, Pei
2010-05-01
To avoid the disadvantages of conventional traveling wave ultrasonic motors--lower efficiency PZT working mode of d(31), fragility of the PZT element under strong excitation, fatigue of the adhesive layer under harsh environmental conditions, and low volume of the PZT material in the stator--a new type of traveling wave ultrasonic motor is presented in this paper. Here we implement the stator by nesting 64 PZT stacks in 64 slots specifically cut in a thick metal ring and 64 block springs nested within another 64 slots to produce preloading on the PZT stacks. In this new design, the d33 mode of the PZT is used to excite the flexural vibrations of the stator, and fragility of the PZT ceramics and fatigue of the adhesive layer are no longer an issue. The working principle, FEM simulation, fabrication, and performance measurements of a prototype motor were demonstrated to validate the proposed ideas. Typical output of the prototype motor is no-load speed of 15 rpm and maximum torque of 7.96 N x m. Further improvement will potentially enhance its features by increasing the accuracy in fabrication and adopting appropriate frictional material into the interface between the stator and the rotor.
Biotemplated synthesis of PZT nanowires.
Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C
2013-01-01
Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.
Piezoelectric and mechanical properties of fatigue resistant, self-healing PZT-ionomer composites
NASA Astrophysics Data System (ADS)
James, N. K.; Lafont, U.; van der Zwaag, S.; Groen, W. A.
2014-05-01
Piezoelectric ceramic-polymer composites with 0-3 connectivity were fabricated using lead zirconium titanate (PZT) powder dispersed in an ionomer (Zn ionomer) and its reference ethylene methacrylic acid copolymer (EMAA) polymer matrix. The PZT-Zn ionomer and PZT-EMAA composites were prepared by melt extrusion followed by hot pressing. The effects of poling conditions such as temperature, time and electric field on the piezoelectric properties of the composites were investigated. The experimentally observed piezoelectric charge coefficient and dielectric constant of the composites were compared with theoretical models. The results show that PZT-Zn ionomer composites have better piezoelectric properties compared to PZT-EMAA composites. The static and fatigue properties of the composites were investigated. The PZT-Zn ionomer composites were found to have excellent fatigue resistance even at strain levels of 4%. Due to the self-healing capabilities of the ionomer matrix, the loss of piezoelectric properties after high strain tensile cyclic loading could be partially recovered by thermal healing.
Polarization fatigue in ferroelectric Pb(Zr0.52Ti0.48)O3-SrBi2Nb2O9 ceramics
NASA Astrophysics Data System (ADS)
Namsar, Orapim; Pojprapai, Soodkhet; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda
2015-09-01
Ferroelectric fatigue induced by cyclic electric loading of the (1- x)PZT- xSBN ceramics (0.1 ≤ x ≤ 0.3) have been investigated in comparison with pure PZT and SBN ceramics. The results showed that pure PZT ceramic possessed severe polarization fatigue after long bipolar switching pulses. This was mainly attributed to the appearance of microstructural damage at the near-electrode regions. Whereas, pure SBN ceramic exhibited no fatigue at least up to 1 × 106 switching cycles. The fatigue-free behavior of SBN ceramics was due primarily to weak domain wall pinning. PZT-SBN ceramics showed less polarization fatigue up to 1 × 106 switching cycles than pure PZT. This could be attributed to their low oxygen vacancy concentration. Therefore, this new ceramic PZT-SBN system seems to be an alternative material for replacing PZT in ferroelectric memory applications. [Figure not available: see fulltext.
Kim, Ki-Bok; Hsu, David K; Ahn, Bongyoung; Kim, Young-Gil; Barnard, Daniel J
2010-08-01
This paper describes fabrication and comparison of PMN-PT single crystal, PZT, and PZT-based 1-3 composite ultrasonic transducers for NDE applications. As a front matching layer between test material (Austenite stainless steel, SUS316) and piezoelectric materials, alumina ceramics was selected. The appropriate acoustic impedance of the backing materials for each transducer was determined based on the results of KLM model simulation. Prototype ultrasonic transducers with the center frequencies of approximately 2.25 and 5MHz for contact measurement were fabricated and compared to each other. The PMN-PT single crystal ultrasonic transducer shows considerably improved performance in sensitivity over the PZT and PZT-based 1-3 composite ultrasonic transducers. Copyright (c) 2010 Elsevier B.V. All rights reserved.
Detection of crack in thin cylindrical pipes using piezo-actuated Lamb waves
NASA Astrophysics Data System (ADS)
Tua, P. S.; Quek, S. T.; Wang, Q.
2005-05-01
The detection of cracks in beams and plates using piezo-actuated Lamb waves has been presented in the last SPIE Symposium. This paper is an extension of the technique to pipes. It has been shown that for a thin-walled pipe, the assumption of Lamb wave propagation is valid. Such waves can be efficiently excited using piezoceramic transducers (PZT) with good control on the pulse characteristics to assess the health of structural components, such as the presence of cracks. In this paper, a systematic methodology to detect and locate cracks in homogenous cylinder/pipe based on the time-of-flight and strength analysis of propagating Lamb wave is proposed. By observing the attenuation in strength of the direct wave incidence at the sensor, the presence of a crack along the propagation path can be determined. At least four actuation positions, two on each end of the pipe segment of interest, are needed to exhaustively interrogate for the presence of cracks. The detailed procedure for locating and tracing the geometry of the crack(s) is described. It is shown experimentally that the detection using circular PZT actuator and sensor, with dimensions of 5.0 mm diameter and 0.5 mm thick, is possible for an aluminum pipe segment of up to at least 4.0 m in length. The proposed methodology is also explored for the aluminum pipe under more practical situations, such as burying it in sand with only the actuator and sensor positions exposed. Experimental results obtained showed the feasibility of detecting the 'concealed' crack on the pipe buried in sand.
NASA Astrophysics Data System (ADS)
Ortega Achury, Nora Patricia
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic, electric, and ferroelastic ordering, have drawn increasing interest due to their multi-functionality for a variety of device applications. Since, very rare single phase materials exist in nature this kind of properties, an intensive research activity is being pursued towards the development of new engineered materials with strong magneto-electric (ME) coupling. In the present investigation, we have fabricated polycrystalline and highly oriented PbZr0.53,Ti0.47O3--CoFe 2O4 (PZT/CFO) artificially multilayers (MLs) engineered nanostructures thin films which were grown on Pt/TiO2/SiO2/Si and La 0.5Sr0.5CoO3 (LSCO) coated (001) MgO substrates respectively, using the pulsed laser deposition technique. The effect of various PZT/CFO sandwich configurations having 3, 5, and 9 layers, while maintaining similar total PZT and CFO thickness, has been systematically investigated. The first part of this thesis is devoted to the analysis of structural and microstructure properties of the PZT/CFO MLs. X-ray diffraction (XRD) and micro Raman analysis revealed that PZT and CFO were in the perovskite and spinel phases respectively in the all layered nanostructure, without any intermediate phase. The TEM and STEM line scan of the ML thin films showed that the layered structure was maintained with little inter-diffusion near the interfaces at nano-metric scale without any impurity phase, however better interface was observed in highly oriented films. Second part of this dissertation was dedicated to study of the dielectric, impedance, modulus, and conductivity spectroscopies. These measurements were carried out over a wide range of temperatures (100 K to 600 K) and frequencies (100 Hz to 1 MHz) to investigate the grain and grain boundary effects on electrical properties of MLs. The temperature dependent dielectric and loss tangent illustrated step-like behavior and relaxation peaks near the step-up characteristic respectively. The Cole-Cole plots indicate that the most of the dielectric response came from the bulk (grains) MLs below 300 K, whereas grain boundaries and electrode-MLs effects prominent at elevated temperature. The dielectric loss relaxation peaks shifted to higher frequency side with increase in temperature, finally above 300 K, it went out experimental frequency window. Our Cole-Cole fitting of dielectric loss spectra indicated marked deviation from the ideal Debye type of relaxation which is more prominent at elevated temperature. Master modulus spectra support the observation from impedance spectra, it also indicate that the difference between C g and Cgb are higher compared to polycrystalline MLs indicating less effects of grain boundary in highly oriented MLs. We have explained these electrical properties of MLs by Maxwell-Wagner type contributions arising from the interfacial charge at the interface of the MLs structure. Three different types of frequency dependent conduction process were observed at elevated temperature (>300 K), which well fitted with the double power law, sigma(o) = sigma(0) + A 1on1 + A 2on2, it indicates conduction at: Low frequency (<1 kHz) may be due to long range ordering (frequency independent), mid frequency (<10 kHz) may be due to short range hopping, and high frequency (<1 MHz) due to the localized relaxation hopping mechanism. The last part of the thesis is devoted to the study of the multiferroic and magnetoelectric properties of the ML thin films. Both polycrystalline and highly oriented films showed well saturated ferroelectric and ferromagnetic hysteresis loops at room temperature. Temperature dependence of ferroelectric properties showed that polarization slowly decreases from 300 K to 200 K, with complete collapse of polarization at ˜ 100 K, but there was complete recovery of the polarization during heating, which was repeatable over many different experiments. At the same time, in the same temperature interval the remanent magnetization of the MLs showed slow enhancement in the magnitude till 200 K with three fold increase at 100 K compared to room temperature. This enhancement in remanent magnetization and decrease in remanent ferroelectric polarization on lowering the temperature indicate temperature dependent dynamic switching of ferroelectric polarization. Frequencies and temperatures dependence of the ferroelectric hysteresis loop showed weak frequency dependence for highly oriented MLs, while significant dependence was observed for polycrystalline MLs. The fatigue test showed almost 0-20% deterioration in polarization. The fatigue and strong temperature and frequency dependent magneto-electric coupling suggest the utility of MLs for Dynamic Magneto-Electric Random Access Memory (DMERAM) and magnetic field sensor devices.
Sensitivity of PZT Impedance Sensors for Damage Detection of Concrete Structures.
Yang, Yaowen; Hu, Yuhang; Lu, Yong
2008-01-21
Piezoelectric ceramic Lead Zirconate Titanate (PZT) based electro-mechanicalimpedance (EMI) technique for structural health monitoring (SHM) has been successfullyapplied to various engineering systems. However, fundamental research work on thesensitivity of the PZT impedance sensors for damage detection is still in need. In thetraditional EMI method, the PZT electro-mechanical (EM) admittance (inverse of theimpedance) is used as damage indicator, which is difficult to specify the effect of damage onstructural properties. This paper uses the structural mechanical impedance (SMI) extractedfrom the PZT EM admittance signature as the damage indicator. A comparison study on thesensitivity of the EM admittance and the structural mechanical impedance to the damages ina concrete structure is conducted. Results show that the SMI is more sensitive to the damagethan the EM admittance thus a better indicator for damage detection. Furthermore, this paperproposes a dynamic system consisting of a number of single-degree-of-freedom elementswith mass, spring and damper components to model the SMI. A genetic algorithm isemployed to search for the optimal value of the unknown parameters in the dynamic system.An experiment is carried out on a two-storey concrete frame subjected to base vibrations thatsimulate earthquake. A number of PZT sensors are regularly arrayed and bonded to the framestructure to acquire PZT EM admittance signatures. The relationship between the damageindex and the distance of the PZT sensor from the damage is studied. Consequently, thesensitivity of the PZT sensors is discussed and their sensing region in concrete is derived.
NASA Astrophysics Data System (ADS)
Qiu, Jinhao; Tani, Junji; Kobayashi, Yoshimasa; Um, Tae Young; Takahashi, Hirofumi
2003-06-01
In this study, Pb(Zr, Ti)O3 (PZT) piezoelectric ceramic fibers were fabricated by extrusion from a mixture of PZT powder and PZT sol. The added PZT sol in this study played the role of a binder; the sol changed into crystalline PZT during sintering, and removal of additives before sintering was not required. To obtain the required PZT fibers, the sol viscosity adjustment condition, the mixture ratio of powder and sol for fiber extrusion, and the sintering condition for obtaining polycrystalline fibers were investigated. The PZT precursor solution was synthesized from lead acetate trihydrate, zirconium n-propoxide, and titanium isopropoxide by reflux at 120 °C for 3 h with 2-methoxyethanol. The appropriate adjustment of the spinnable sol was achieved by the addition of acetic acid to suppress the hydrolysis reaction and by curing the sol at 80 °C to promote the condensation of the sol. Green fibers with diameters of about 300µm were successfully extruded from the mixture of PZT powder and sol (powder:sol = 5- 8:1, molar ratio). The extruded fibers, sintered at 1200 °C, had a microstructure with 2- 6µm grains and had no pores or cracks. From the results of displacement behavior measurements, the PZT fibers fabricated by firing at 1200 °C in this study were considered to have the desired piezoelectric properties.
Processing and electrical properties of gallium-substituted lead zirconate titanate ceramics
NASA Astrophysics Data System (ADS)
Hajra, Sugato; Sharma, Pulkit; Sahoo, Sushrisangita; Rout, P. K.; Choudhary, R. N. P.
2017-12-01
In the present paper, the effect of gallium (Ga) substitution on structural, microstructural, electrical conductivity of Pb(ZrTi)O3 (PZT) in the morphotropic phase boundary (MPB) region (i.e., Pb0.96Ga0.04(Zr0.48Ti0.52)0.99O3 (PGaZT-4)) was investigated. Increased grain density increases the resistivity of the Ga-modified PZT system. Preliminary structural analysis using X-ray diffraction pattern and data showed the existence of two phases [major tetragonal (T) and minor monoclinic (M)]. Field emission scanning electron micrograph (FESEM) showed the distribution of spherical as well as platelet type grains with small pores. The behavior of dielectric constant with temperature of PGaZT-4 exhibited the suppression of the ferroelectric phase transition [i.e., disappearance of Curie temperature ( T c)]. The complex impedance spectroscopy (CIS) technique helped to investigate the impedance parameters of PGaZT-4 in MPB region in a wide range of temperature (250-500 °C) and frequency (1-1000 kHz) region. The impedance parameters of the material are found to be strongly dependent on frequency of AC electric field and temperature. The substitution of gallium at the Pb site of PZT generally enhances the dielectric constant and decreases loss tangent. The AC conductivity vs frequency ( f = ω2 π) in the region of dispersion follows the universal response of Jonscher's equation. Enhanced resistive characteristics were observed for Ga-substituted PZT in comparison to the pure PZT, which was well ensured from the studies of electrical parameters, such as impedance and AC conductivity.
PZT Active Frequency Based Wind Blade Fatigue to Failure Testing Results for Various Blade Designs
2011-09-01
PZT Active Frequency Based Wind Blade Fatigue to Failure Testing Results for Various Blade Designs R. J. WERLINK...number. 1. REPORT DATE SEP 2011 2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE PZT Active Frequency Based Wind Blade Fatigue ...18 Abstract: This paper summarizes NASA PZT Health Monitoring System results previously reported for 9 meter blade Fatigue loading to failure
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ci, Penghong; Liu, Guoxi; Dong, Shuxiang, E-mail: sxdong@pku.edu.cn
We report a strain-mediated electric field manipulation of permittivity in BaTiO{sub 3} (barium titanate, BT) ceramic by a Pb(Zr,Ti)O{sub 3} (PZT) bimorph. This BT/PZT heterostructure exhibited a relatively large permittivity tunability of BT up to ±10% in a wide frequency range under an electric field of ±4 kV/cm applied to the PZT bimorph. The permittivity tunability is attributed to the strain in BT produced by the PZT bimorph. Calculations of the relationship between permittivity and applied electric field were developed, and corresponded well with measurements. The BT/PZT heterostructure has potential for applications in broadband field tunable smart electronic devices.
Yan, Shi; Dai, Yong; Zhao, Putian; Liu, Weiling
2018-01-01
Steel-concrete composite structures are playing an increasingly important role in economic construction because of a series of advantages of great stiffness, good seismic performance, steel material saving, cost efficiency, convenient construction, etc. However, in service process, due to the long-term effects of environmental impacts and dynamic loading, interfaces of a composite structure might generate debonding cracks, relative slips or separations, and so on, lowering the composite effect of the composite structure. In this paper, the piezoceramics (PZT) are used as transducers to perform experiments on interface debonding slips and separations of composite beams, respectively, aimed at proposing an interface damage identification model and a relevant damage detection innovation method based on PZT wave technology. One part of various PZT patches was embedded in concrete as "smart aggregates," and another part of the PZT patches was pasted on the surface of the steel beam flange, forming a sensor array. A push-out test for four specimens was carried out and experimental results showed that, under the action of the external loading, the received signal amplitudes will increasingly decrease with increase of debonding slips along the interface. The proposed signal energy-based interface damage detection algorithm is highly efficient in surface state evaluations of composite beams.
Manufacturing of prestressed piezoelectric unimorphs using a postfired biasing layer.
Juuti, Jari A; Jantunen, Heli; Moilanen, Veli-Pekka; Leppävuori, Seppo
2006-05-01
A novel manufacturing method for prestressed piezoelectric unimorphs is introduced and the actuator properties are examined. Prestressed PZT 5A and PZT 5H unimorphs with piezo material thickness of 250 microm and 375 microm were manufactured by using sintering and thermal shrinkage of the prestressing material. The process was carried out by screen printing a layer of AgPd paste on one side of the sintered bulk ceramic. As an alternative method, dielectric low temperature co-fired ceramic (LTCC) tape was used as the prestressing material. Different configurations were tested to obtain high displacements and to make a comparison between materials. After firing, the samples were poled, and the displacement versus load characteristics of the resulting actuators were investigated. A maximum displacement of 118 microm was obtained from a 250 microm thick, prestressed PZT 5H actuator with a diameter of 25 mm, in which LTCC tape was used as the prestressing layer. Similarly, the PZT 5H material provided a maximum displacement of 63 microm with a screen-printed AgPd prestressing layer. The manufacturing method described offers a novel approach for the production of a wide range of integrated active structures on, for instance, an LTCC circuit board. This is especially important because piezoelectric bulk materials with high piezoelectric coefficients can be used to produce high displacements.
PMN-PT-PZT composite films for high frequency ultrasonic transducer applications.
Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk
2012-06-01
We have successfully fabricated x (0.65PMN-0.35PT)-(1 - x )PZT ( x PMN-PT-(1 - x )PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol-gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of x PMN-PT-(1 - x )PZT films show better ferroelectric properties. A representative 0.9PMN-PT-0.1PZT thick film transducer is built. It has 200 MHz center frequency with a -6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.
PMN-PT–PZT composite films for high frequency ultrasonic transducer applications
Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K. Kirk
2013-01-01
We have successfully fabricated x(0.65PMN-0.35PT)–(1 − x)PZT (xPMN-PT–(1 − x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol–gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT–(1 − x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT–0.1PZT thick film transducer is built. It has 200 MHz center frequency with a −6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB. PMID:23750072
PVDF-PZT nanocomposite film based self-charging power cell.
Zhang, Yan; Zhang, Yujing; Xue, Xinyu; Cui, Chunxiao; He, Bin; Nie, Yuxin; Deng, Ping; Lin Wang, Zhong
2014-03-14
A novel PVDF-PZT nanocomposite film has been proposed and used as a piezoseparator in self-charging power cells (SCPCs). The structure, composed of poly(vinylidene fluoride) (PVDF) and lead zirconate titanate (PZT), provides a high piezoelectric output, because PZT in this nanocomposite film can improve the piezopotential compared to the pure PVDF film. The SCPC based on this nanocomposite film can be efficiently charged up by the mechanical deformation in the absence of an external power source. The charge capacity of the PVDF-PZT nanocomposite film based SCPC in 240 s is ∼0.010 μA h, higher than that of a pure PVDF film based SCPC (∼0.004 μA h). This is the first demonstration of using PVDF-PZT nanocomposite film as a piezoseparator for SCPC, and is an important step for the practical applications of SCPC for harvesting and storing mechanical energy.
Design Parameters of a Miniaturized Piezoelectric Underwater Acoustic Transmitter
Li, Huidong; Deng, Zhiqun Daniel; Yuan, Yong; Carlson, Thomas J.
2012-01-01
PZT ceramics have been widely used in underwater acoustic transducers. However, literature available discussing the design parameters of a miniaturized PZT-based low-duty-cycle transmitter is very limited. This paper discusses some of the design parameters—the backing material, driving voltage, PZT material type, power consumption and the transducer length of a miniaturized acoustic fish tag using a PZT tube. Four different types of PZT were evaluated with respect to the source level, energy consumption and bandwidth of the transducer. The effect of the tube length on the source level is discussed. The results demonstrate that ultralow-density closed-cell foam is the best backing material for the PZT tube. The Navy Type VI PZTs provide the best source level with relatively low energy consumption and that a low transducer capacitance is preferred for high efficiency. A 35% reduction in the transducer length results in 2 dB decrease in source level. PMID:23012534
Design parameters of a miniaturized piezoelectric underwater acoustic transmitter.
Li, Huidong; Deng, Zhiqun Daniel; Yuan, Yong; Carlson, Thomas J
2012-01-01
PZT ceramics have been widely used in underwater acoustic transducers. However, literature available discussing the design parameters of a miniaturized PZT-based low-duty-cycle transmitter is very limited. This paper discusses some of the design parameters--the backing material, driving voltage, PZT material type, power consumption and the transducer length of a miniaturized acoustic fish tag using a PZT tube. Four different types of PZT were evaluated with respect to the source level, energy consumption and bandwidth of the transducer. The effect of the tube length on the source level is discussed. The results demonstrate that ultralow-density closed-cell foam is the best backing material for the PZT tube. The Navy Type VI PZTs provide the best source level with relatively low energy consumption and that a low transducer capacitance is preferred for high efficiency. A 35% reduction in the transducer length results in 2 dB decrease in source level.
2013-07-25
at remanent state (Fig. 4(d)). The obtained ME coefficient (the highest value we measure is 102 mV/ cm/Oe) and is comparable to that of bulk PZT -CFO...For a large field (H > Hc), a mag- netostrictive strain (k) must be already saturated and the ME coefficient estimated (Fig. 4) should be nearly...zero at high field (as a function of piezomagnetic coefficient (dk=dH), leading to a maximum in the ME response near Hc. That this is not observed can be
Sensitivity of PZT Impedance Sensors for Damage Detection of Concrete Structures
Yang, Yaowen; Hu, Yuhang; Lu, Yong
2008-01-01
Piezoelectric ceramic Lead Zirconate Titanate (PZT) based electro-mechanical impedance (EMI) technique for structural health monitoring (SHM) has been successfully applied to various engineering systems. However, fundamental research work on the sensitivity of the PZT impedance sensors for damage detection is still in need. In the traditional EMI method, the PZT electro-mechanical (EM) admittance (inverse of the impedance) is used as damage indicator, which is difficult to specify the effect of damage on structural properties. This paper uses the structural mechanical impedance (SMI) extracted from the PZT EM admittance signature as the damage indicator. A comparison study on the sensitivity of the EM admittance and the structural mechanical impedance to the damages in a concrete structure is conducted. Results show that the SMI is more sensitive to the damage than the EM admittance thus a better indicator for damage detection. Furthermore, this paper proposes a dynamic system consisting of a number of single-degree-of-freedom elements with mass, spring and damper components to model the SMI. A genetic algorithm is employed to search for the optimal value of the unknown parameters in the dynamic system. An experiment is carried out on a two-storey concrete frame subjected to base vibrations that simulate earthquake. A number of PZT sensors are regularly arrayed and bonded to the frame structure to acquire PZT EM admittance signatures. The relationship between the damage index and the distance of the PZT sensor from the damage is studied. Consequently, the sensitivity of the PZT sensors is discussed and their sensing region in concrete is derived. PMID:27879711
Park, Jongcheol; Park, Jae Yeong
2013-10-01
A piezoelectric vibration energy harvester with inter-digital IrO(x) electrode was developed by using silicon bulk micromachining technology. Most PZT cantilever based energy harvesters have utilized platinum electrode material. However, the PZT fatigue characteristics and adhesion/delamination problems caused by the platinum electrode might be serious problem in reliability of energy harvester. To address these problems, the iridium oxide was newly applied. The proposed energy harvester was comprised of bulk micromachined silicon cantilever with 800 x 1000 x 20 microm3, which having a silicon supporting membrane, sol-gel-spin coated Pb(Zr52, Ti48)O3 thin film, and sputtered inter-digitally shaped IrO(x) electrodes, and silicon inertial mass with 1000 x 1000 x 500 microm3 to adjust its resonant frequency. The fabricated energy harvester generated 1 microW of electrical power to 470 komega of load resistance and 1.4 V(peak-to-peak) from a vibration of 0.4 g at 1.475 kHz. The corresponding power density was 6.25 mW x cm(-3) x g(-2). As expected, its electrical failure was significantly improved.
Design, fabrication, and testing of a low frequency MEMS piezoelectromagnetic energy harvester
NASA Astrophysics Data System (ADS)
Fernandes, Egon; Martin, Blake; Rua, Isabel; Zarabi, Sid; Debéda, Hélène; Nairn, David; Wei, Lan; Salehian, Armaghan
2018-03-01
This paper details a power solution for smart grid applications to replace batteries by harvesting the electromagnetic energy from a current-carrying wire. A MEMS piezoelectromagnetic energy harvester has been fabricated using PZT screen-printing technology with a centrally-supported meandering geometry. The energy harvesting device employs a symmetric geometry to increase its power output by reducing the effects of the torsional modes and the resultant overall strain nodes in the system subsequently reduce the complexities for the electrode fabrication. The unit is modelled using COMSOL to determine mode shapes and frequency response functions. A 12.7 mm by 14.7 mm unit is fabricated by screen-printing 75 μm-thick PZT on a stainless steel substrate and then experimentally tested to validate the FEA results. Experimentally, the harvester is shown to produce 9 μW from a wire carrying 7 A while operating at a distance of 6.5 mm from the wire. The design of the current work results in a greater normalized power density than other MEMS based piezoelectromagnetic devices and shows great potential relative to larger devices that use bulk or thin film piezoelectrics.
Properties of PZT-Based Piezoelectric Ceramics Between -150 and 250 C
NASA Technical Reports Server (NTRS)
Hooker, Matthew W.
1998-01-01
The properties of three PZT-based piezoelectric ceramics and one PLZT electrostrictive ceramic were measured as a function of temperature. In this work, the dielectric, ferroelectric polarization versus electric field, and piezoelectric properties of PZT-4, PZT-5A, PZT-5H, and PLZT-9/65/35 were measured over a temperature range of -150 to 250 C. In addition to these measurements, the relative thermal expansion of each composition was measured from 25 to 600 C and the modulus of rupture of each material was measured at room temperature. This report describes the experimental results and compares and contrasts the properties of these materials with respect to their applicability to intelligent aerospace systems.
Bio-Inspired Stretchable Network-Based Intelligent Composites
2012-05-03
on par with that of lead zirconate titanate ( PZT ). This shows that the BSPT piezo-transducer has the potential to function in ultrasonic situations as...well as the PZTs typically used As a final test, the full network was used, with the same data acquisition computer, designed for PZT - based networks...ality of BSPT in SHM systems. These experiments indicate that BSPT has function- ality on par with PZT -5A and can simply replace the PZT in existing
Experimental characterization of PZT fibers using IDE electrodes
NASA Astrophysics Data System (ADS)
Wyckoff, Nicholas; Ben Atitallah, Hassene; Ounaies, Zoubeida
2016-04-01
Lead zirconate titanate (PZT) fibers are mainly used in active fiber composites (AFC) where they are embedded in a polymer matrix. Interdigitated electrodes (IDE) along the direction of the fibers are used to achieve planar actuation, hereby exploiting the d33 coefficient of PZT. When embedded in the AFC, the PZT fibers are subjected to mechanical loading as well as non-uniform electric field as a result of the IDEs. Therefore, it is important to characterize the electrical and electromechanical behavior of these fibers ex-situ using the IDE electrodes to assess the impact of nonuniform electric field on the properties of the fibers. For that reason, this work aims at quantifying the impact of IDE electrodes on the electrical and electromechanical behavior of PZT fibers, which is necessary for their successful implementation in devices like AFC. The tested fibers were purchased from Advanced Cerametrics and they have an average diameter of 250 micrometers. The IDE electrodes were screen printed on an acrylic substrate. The PZT fibers were subjected to frequency sweeps at low voltages to determine permittivity for parallel and interdigitated electrodes. The piezoelectric e33 constant is determined from electromechanical testing of PZT fibers in parallel electrodes to compare the electromechanical behavior for PZT in bulk and fiber form. The dielectric constant and e33 were found to be lower for the IDE and parallel electrodes compared to bulk but comparable to results published in literature.
Nguyen, Minh D; Houwman, Evert P; Dekkers, Matthijn; Rijnders, Guus
2017-03-22
Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d 31f ) and ferroelectric remanent polarization (P r ), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d 33f ) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average P r and d 33f values become larger. The largest piezoelectric coefficient of d 33f = 408 pm V -1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5-5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V -1 was deduced in the 3.5-4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness.
2017-01-01
Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness. PMID:28247756
Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A
2018-03-27
Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.
Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A.
2018-01-01
Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods. PMID:29658917
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Tengxing; Peng, Yujia; Jiang, Wei
Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less
Wang, Tengxing; Peng, Yujia; Jiang, Wei; ...
2016-10-31
Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less
NASA Astrophysics Data System (ADS)
Xu, Bin; Chen, Hongbing; Xia, Song
2017-03-01
In recent years, Piezoelectric Lead Zirconate Titanate (PZT) based active interfacial debonding defect detection approach for concrete-filled steel tubular (CFST) columns has been proposed and validated experimentally. In order to investigate the mechanism of the PZT based interfacial debonding detection approach, a multi-physics coupling finite element model (FEM) composed of surface-mounted PZT actuator, embedded PZT sensor and a rectangular CFST column is constructed to numerically simulate the stress wave propagation induced by the surface-mounted PZT actuator under different excitation signals with different frequency and amplitude. The measurements of the embedded PZT sensor in concrete core of the CFST columns with different interfacial debonding defect lengths and depths are determined numerically with transient dynamic analysis. The linearity between the PZT response and the input amplitude, the effect of different frequency and measurement distance are discussed and the stress wave fields of CFST members without and with interface debonding defects are compared. Then, the response of the embedded PZT in concrete core is analyzed with wavelet packet analysis. The root mean square deviation (RMSD) of wavelet packet energy spectrum of the PZT measurement is employed as an evaluation index for the interfacial debonding detection. The results showed that the defined index under continuous sinusoidal and sweep frequency signals changes with the interfacial defects length and depth and is capable of effectively identifying the interfacial debonding defect between the concrete core and the steel tubular. Moreover, the index under sweep frequency signal is more sensitive to the interfacial debonding. The simulation results indicate that the interfacial debonding defect leads to the changes in the propagation path, travel time and the magnitude of stress waves. The simulation results meet the findings from the previous experimental study by the authors and help understand the mechanism of interfacial debonding defect detection for CFSTs using PZT technology.
Modelling the structure of Zr-rich Pb(Zr1-xTix)O3, x = 0.4 by a multiphase approach.
Bogdanov, Alexander; Mysovsky, Andrey; Pickard, Chris J; Kimmel, Anna V
2016-10-12
Solid solution perovskite Pb(Zr 1-x Ti x )O 3 (PZT) is an industrially important material. Despite the long history of experimental and theoretical studies, the structure of this material is still under intensive discussion. In this work, we have applied structure searching coupled with density functional theory methods to provide a multiphase description of this material at x = 0.4. We demonstrate that the permutational freedom of B-site cations leads to the stabilisation of a variety of local phases reflecting a relatively flat energy landscape of PZT. Using a set of predicted local phases we reproduce the experimental pair distribution function (PDF) profile with high accuracy. We introduce a complex multiphase picture of the structure of PZT and show that additional monoclinic and rhombohedral phases account for a better description of the experimental PDF profile. We propose that such a multiphase picture reflects the entropy reached in the sample during the preparation process.
Standing wave brass-PZT square tubular ultrasonic motor.
Park, Soonho; He, Siyuan
2012-09-01
This paper reports a standing wave brass-PZT tubular ultrasonic motor. The motor is composed of a brass square tube with two teeth on each tube end. Four PZT plates are attached to the outside walls of the brass tube. The motor requires only one driving signal to excite vibration in a single bending mode to generate reciprocating diagonal trajectories of teeth on the brass tube ends, which drive the motor to rotate. Bi-directional rotation is achieved by exciting different pairs of PZT plates to switch the bending vibration direction. Through using the brass-PZT tube structure, the motor can take high magnitude vibration to achieve a high output power in comparison to PZT tube based ultrasonic motors. Prototypes are fabricated and tested. The dimension of the brass-PZT tube is 3.975mm×3.975mm×16mm. Measured performance is a no-load speed of >1000RPM, a stall torque of 370μNm and a maximum output power of 16 mW when a sinusoidal driving voltage of 50V is applied. The working frequencies of the motor are 46,050Hz (clockwise) and 46,200Hz (counter-clockwise). Copyright © 2012. Published by Elsevier B.V.
NASA Technical Reports Server (NTRS)
Koopmann, Gary H.; Lesieutre, George A.; Yoshikawa, Shoko; Chen, Weicheng; Fahnline, John B.; Pai, Suresh; Dershem, Brian
1996-01-01
In this presentation, the authors describe the design and fabrication processes for a PZT strain actuator that evolved during the initial stages of a research effort to synthesize and process intelligent, cost effective structures (SPICES). The actuator performance requirements were similar to those of conventional actuators, e.g., it had to be robust, highly efficient with adequate force and stroke, as lightweight as possible, and most importantly, affordable. Further, since the actuator was to be integrated within a composite structure, it had to be compatible with the host material and easily embeddable during the fabrication process. In control applications employing strain devices as actuators, a good bond between this actuator and host material is critical to their successful operation. This criterion is often difficult to achieve when attempting to join ceramics with metals or polymers with dissimilar properties such as Young's moduli, thermal expansion coefficients, etc. One unique feature of the actuator design that evolved in this project is that the need for direct bonding between the PZT ceramic and polymers was circumvented, i.e. the strain transfer to the host material was achieved via a frame surrounding the ceramic. Consequently, the frame material could be selected (or coated) for compatibility with the host material. A second feature is that the frame enclosed a co-fired, multilayered, PZT stack that was used to minimize the voltage requirements while maximizing the output strain.
1993-02-01
CBu)4 j 80% solution In 1-butanol, titanium S mable PZT. and NuOW=a isopropoxide (Ti(OPf1 )4], niobium ethoxide (Nb(OC 2 H5) 5 i, ýand cadrrtni qa...fibers(5). We have chosen the sol-gel route to produce PZT fiber of less that 30Mm diameter by spin-drawing PZT solutions at proper viscosity. The first...dielectric constant and electromechanical coupling by controlling grain growth and grain boundary conditions. PZT precursor solutions in the form of viscous
Synthesis of Multifunctional Materials
2006-09-01
temperatures of 600’C and higher, whereas layers grown at lower temperature contained PbO inclusions. Growth of Pb(ZrxTi1 ..)0 3 ( PZT ) films by molecular...beam epitaxy was demonstrated for the first time. Single-crystal, single-phase PZT films were grown on (001) SrTiO3 substrates at a growth temperature...compounds of the PZT system, PbTiO 3 and PbZrO 3, and three-dimensional growth mode for PZT films of intermediate compositions. Epitaxial growth of PbO
Zhang, Yan; Xie, Mengying; Roscow, James; Bao, Yinxiang; Zhou, Kechao
2017-01-01
This paper demonstrates the significant benefits of exploiting highly aligned porosity in piezoelectric and pyroelectric materials for improved energy harvesting performance. Porous lead zirconate (PZT) ceramics with aligned pore channels and varying fractions of porosity were manufactured in a water-based suspension using freeze-casting. The aligned porous PZT ceramics were characterized in detail for both piezoelectric and pyroelectric properties and their energy harvesting performance figures of merit were assessed parallel and perpendicular to the freezing direction. As a result of the introduction of porosity into the ceramic microstructure, high piezoelectric and pyroelectric harvesting figures of merits were achieved for porous freeze-cast PZT compared to dense PZT due to the reduced permittivity and volume specific heat capacity. Experimental results were compared to parallel and series analytical models with good agreement and the PZT with porosity aligned parallel to the freezing direction exhibited the highest piezoelectric and pyroelectric harvesting response; this was a result of the enhanced interconnectivity of the ferroelectric material along the poling direction and reduced fraction of unpoled material that leads to a higher polarization. A complete thermal energy harvesting system, composed of a parallel-aligned PZT harvester element and an AC/DC converter, was successfully demonstrated by charging a storage capacitor. The maximum energy density generated by the 60 vol% porous parallel-connected PZT when subjected to thermal oscillations was 1653 μJ cm–3, which was 374% higher than that of the dense PZT with an energy density of 446 μJ cm–3. The results are beneficial for the design and manufacture of high performance porous pyroelectric and piezoelectric materials in devices for energy harvesting and sensor applications. PMID:28580142
Nanocomposites with increased energy density through high aspect ratio PZT nanowires.
Tang, Haixiong; Lin, Yirong; Andrews, Clark; Sodano, Henry A
2011-01-07
High energy storage plays an important role in the modern electric industry. Herein, we investigated the role of filler aspect ratio in nanocomposites for energy storage. Nanocomposites were synthesized using lead zirconate titanate (PZT) with two different aspect ratio (nanowires, nanorods) fillers at various volume fractions dispersed in a polyvinylidene fluoride (PVDF) matrix. The permittivity constants of composites containing nanowires (NWs) were higher than those with nanorods (NRs) at the same inclusion volume fraction. It was also indicated that the high frequency loss tangent of samples with PZT nanowires was smaller than for those with nanorods, demonstrating the high electrical energy storage efficiency of the PZT NW nanocomposite. The high aspect ratio PZT NWs showed a 77.8% increase in energy density over the lower aspect ratio PZT NRs, under an electric field of 15 kV mm(-1) and 50% volume fraction. The breakdown strength was found to decrease with the increasing volume fraction of PZT NWs, but to only change slightly from a volume fraction of around 20%-50%. The maximum calculated energy density of nanocomposites is as high as 1.158 J cm(-3) at 50% PZT NWs in PVDF. Since the breakdown strength is lower compared to a PVDF copolymer such as poly(vinylidene fluoride-tertrifluoroethylene-terchlorotrifluoroethylene) P(VDF-TreEE-CTFE) and poly(vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP), the energy density of the nanocomposite could be significantly increased through the use of PZT NWs and a polymer with greater breakdown strength. These results indicate that higher aspect ratio fillers show promising potential to improve the energy density of nanocomposites, leading to the development of advanced capacitors with high energy density.
Zhang, Yan; Xie, Mengying; Roscow, James; Bao, Yinxiang; Zhou, Kechao; Zhang, Dou; Bowen, Chris R
2017-04-14
This paper demonstrates the significant benefits of exploiting highly aligned porosity in piezoelectric and pyroelectric materials for improved energy harvesting performance. Porous lead zirconate (PZT) ceramics with aligned pore channels and varying fractions of porosity were manufactured in a water-based suspension using freeze-casting. The aligned porous PZT ceramics were characterized in detail for both piezoelectric and pyroelectric properties and their energy harvesting performance figures of merit were assessed parallel and perpendicular to the freezing direction. As a result of the introduction of porosity into the ceramic microstructure, high piezoelectric and pyroelectric harvesting figures of merits were achieved for porous freeze-cast PZT compared to dense PZT due to the reduced permittivity and volume specific heat capacity. Experimental results were compared to parallel and series analytical models with good agreement and the PZT with porosity aligned parallel to the freezing direction exhibited the highest piezoelectric and pyroelectric harvesting response; this was a result of the enhanced interconnectivity of the ferroelectric material along the poling direction and reduced fraction of unpoled material that leads to a higher polarization. A complete thermal energy harvesting system, composed of a parallel-aligned PZT harvester element and an AC/DC converter, was successfully demonstrated by charging a storage capacitor. The maximum energy density generated by the 60 vol% porous parallel-connected PZT when subjected to thermal oscillations was 1653 μJ cm -3 , which was 374% higher than that of the dense PZT with an energy density of 446 μJ cm -3 . The results are beneficial for the design and manufacture of high performance porous pyroelectric and piezoelectric materials in devices for energy harvesting and sensor applications.
Enhanced Output Power of PZT Nanogenerator by Controlling Surface Morphology of Electrode.
Jung, Woo-Suk; Lee, Won-Hee; Ju, Byeong-Kwon; Yoon, Seok-Jin; Kang, Chong-Yun
2015-11-01
Piezoelectric power generation using Pb(Zr,Ti)O3(PZT) nanowires grown on Nb-doped SrTiO3(nb:STO) substrate has been demonstrated. The epitaxial PZT nanowires prepared by a hydrothermal method, with a diameter and length of approximately 300 nm and 7 μm, respecively, were vertically aligned on the substrate. An embossed Au top electrode was applied to maximize the effective power generation area for non-uniform PZT nanowires. The PZT nanogenerator produced output power density of 0.56 μW/cm2 with a voltage of 0.9 V and current of 75 nA. This research suggests that the morphology control of top electrode can be useful to improve the efficiency of piezoelectric power generation.
CHARACTERIZATION OF POLED SINGLE-LAYER PZT FOR PIEZO STACK IN FUEL INJECTION SYSTEM
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Hong; Matsunaga, Tadashi; Lin, Hua-Tay
2010-01-01
Poled single-layer PZT has been characterized in as-extracted and as-received states. PZT plate specimens in the former were extracted from a stack. Flexure strength of PZT was evaluated by using ball-on-ring and 4-point bend tests. Fractography showed that intergranular fractures dominated the fracture surface and that volume pores were the primary strength-limiting flaws. The electric field effect was investigated by testing the PZT in open circuit and coercive field levels. An asymmetrical response on the biaxial flexure strength with respect to the electric field direction was observed. These experimental results will assist reliability design of the piezo stack that ismore » being considered in fuel injection system.« less
A concept of wireless and passive very-high temperature sensor
NASA Astrophysics Data System (ADS)
Nicolay, P.; Matloub, R.; Bardong, J.; Mazzalai, A.; Muralt, P.
2017-05-01
There is a need for sensors capable operating at temperatures above 1000 °C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The cold junction of the thermocouple is electrically connected to a highly piezoelectric thin layer, deposited on top of a SAW substrate. In operation, the voltage generated by the temperature gradient between the hot (>1000 °C) and cold junction (<350 °C) generates a strain field in the layer, which is mechanically transmitted to the substrate. This modifies the SAW propagation conditions and therefore the sensors' radiofrequency response. The change depends on the applied voltage and thus on the hot junction temperature. As SAW devices are passive elements that can be remotely interrogated, it becomes possible to infer the hot junction temperature from the radiofrequency response, i.e., to remotely read temperatures above 1000 °C, without embedded electronics. In this paper, we demonstrate the feasibility of this concept, using AlN layers deposited on Y-Z Lithium Niobate (LN). The achieved sensitivity of 80 Hz/V at 400 MHz is constant over a wide voltage range. Numerical simulations were performed to compute the main properties of the demonstrators and suggest optimization strategies. Improvements are expected from the use of stronger piezoelectric layers, such as AlScN or Pb(Ti,Zr)O3 (PZT), which could increase the sensitivity by factors of 3 and 20, as estimated from their transverse piezoelectric coefficients. As a first step in this direction, thin PZT layers have been deposited on Y-Z LN.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Hong; Wang, Jy-An John; Ren, Fei
Integration of smart patches into full-tension splice connectors in overhead power transmission lines was investigated. Lead zirconate titanate (PZT) -5A was used as a smart material and an aluminum beam was used as a host structure. Negative electrode termination was examined by using copper adhesive tape and direct bonding methods. Various commercial adhesives were studied for PZT integration onto the host structure. Aluminum beam specimens with integrated PZT smart patches were tested under thermal cycling at a temperature of 125 C, which is the higher-end temperature experienced by in-service aluminum conductor steel-reinforced cables. Electromechanical impedance (EMI) measurements were conducted atmore » room temperature, and the root mean square deviation (RMSD) of the conductance signals was used to analyze the EMI data. It has been shown that the negative electrode method has an important effect on the performance of the integrated PZT. The PZT displayed more susceptibility to cracking when copper tape was used than when direct bonding was used. The reliability of PZT in direct bonding depended on the adhesives used in bonding layers. Although a hard alumina based adhesive can lead to cracking of the PZT, a high-temperature epoxy with adequate flexibility, such as Duralco 4538D, can provide the desired performance under target thermal cycling conditions. The RMSD parameter can characterize conductance signatures effectively. It also was demonstrated that RMSD can be used to quantify the fatigue of the PZT integration system, although RMSD is used primarily as a damage index in monitoring structural health.« less
Bio-inspired piezoelectric artificial hair cell sensor fabricated by powder injection molding
NASA Astrophysics Data System (ADS)
Han, Jun Sae; Oh, Keun Ha; Moon, Won Kyu; Kim, Kyungseop; Joh, Cheeyoung; Seo, Hee Seon; Bollina, Ravi; Park, Seong Jin
2015-12-01
A piezoelectric artificial hair cell sensor was fabricated by the powder injection molding process in order to make an acoustic vector hydrophone. The entire process of powder injection molding was developed and optimized for PMN-PZT ceramic powder. The artificial hair cell sensor, which consists of high aspect ratio hair cell and three rectangular mechanoreceptors, was precisely fabricated through the developed powder injection molding process. The density and the dielectric property of the fabricated sensor shows 98% of the theoretical density and 85% of reference dielectric property of PMN-PZT ceramic powder. With regard to homogeneity, three rectangular mechanoreceptors have the same dimensions, with 3 μm of tolerance with 8% of deviation of dielectric property. Packaged vector hydrophones measure the underwater acoustic signals from 500 to 800 Hz with -212 dB of sensitivity. Directivity of vector hydrophone was acquired at 600 Hz as analyzing phase differences of electric signals.
Composite Pyroelectric Materials.
1979-06-30
in hydtochloric acid .. The wax negative is reinvested with a PZT slip (43 volume% PZT, 53% 1120, 4% poly (vinyl alcohol)). Ultrasonics PZT-501A with an...Laboratory are also acknowledged with gratitude. This work was sponsored by the Department of Defense through contracts N00014-78-C-0291 and HDA 903-78
Fabrication of flexible piezoelectric PZT/fabric composite.
Chen, Caifeng; Hong, Daiwei; Wang, Andong; Ni, Chaoying
2013-01-01
Flexible piezoelectric PZT/fabric composite material is pliable and tough in nature which is in a lack of traditional PZT patches. It has great application prospect in improving the sensitivity of sensor/actuator made by piezoelectric materials especially when they are used for curved surfaces or complicated conditions. In this paper, glass fiber cloth was adopted as carrier to grow PZT piezoelectric crystal particles by hydrothermal method, and the optimum conditions were studied. The results showed that the soft glass fiber cloth was an ideal kind of carrier. A large number of cubic-shaped PZT nanocrystallines grew firmly in the carrier with a dense and uniform distribution. The best hydrothermal condition was found to be pH 13, reaction time 24 h, and reaction temperature 200°C.
Fabrication of Flexible Piezoelectric PZT/Fabric Composite
Chen, Caifeng; Hong, Daiwei; Wang, Andong; Ni, Chaoying
2013-01-01
Flexible piezoelectric PZT/fabric composite material is pliable and tough in nature which is in a lack of traditional PZT patches. It has great application prospect in improving the sensitivity of sensor/actuator made by piezoelectric materials especially when they are used for curved surfaces or complicated conditions. In this paper, glass fiber cloth was adopted as carrier to grow PZT piezoelectric crystal particles by hydrothermal method, and the optimum conditions were studied. The results showed that the soft glass fiber cloth was an ideal kind of carrier. A large number of cubic-shaped PZT nanocrystallines grew firmly in the carrier with a dense and uniform distribution. The best hydrothermal condition was found to be pH 13, reaction time 24 h, and reaction temperature 200°C. PMID:24348194
Power harvesting using PZT ceramics embedded in orthopedic implants.
Chen, Hong; Liu, Ming; Jia, Chen; Wang, Zihua
2009-09-01
Battery lifetime has been the stumbling block for many power-critical or maintenance-free real-time embedded applications, such as wireless sensors and orthopedic implants. Thus a piezoelectric material that could convert human motion into electrical energy provides a very attractive solution for clinical implants. In this work, we analyze the power generation characteristics of stiff lead zirconate titanate (PZT) ceramics and the equivalent circuit through extensive experiments. Our experimental framework allows us to explore many important design considerations of such a PZT-based power generator. Overall we can achieve a PZT element volume of 0.5 x 0.5 x 1.8 cm, which is considerably smaller than the results reported so far. Finally, we outline the application of our PZT elements in a total knee replacement (TKR) implant.
NASA Astrophysics Data System (ADS)
Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.
2016-11-01
Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.
NASA Astrophysics Data System (ADS)
Uchida, Hiroshi; Ichinose, Daichi; Shiraishi, Takahisa; Shima, Hiromi; Kiguchi, Takanori; Akama, Akihiko; Nishida, Ken; Konno, Toyohiko J.; Funakubo, Hiroshi
2017-10-01
For the application of electronic devices using ferroelectric/piezoelectric components, one-axis-oriented tetragonal Pb(Zr0.40Ti0.60)O3 (PZT) films with thicknesses of up to 1 µm were fabricated with the aid of a Ca2Nb3O10 nanosheet (ns-CN) template for preferential crystal growth for evaluating their polarization switching behavior. The ns-CN template was supported on ubiquitous silicon (Si) wafer by a simple dip coating technique, followed by the repetitive chemical solution deposition (CSD) of PZT films. The PZT films were grown successfully with preferential crystal orientation of PZT(100) up to the thickness of 1020 nm. The (100)-oriented PZT film with ∼1 µm thickness exhibited unique polarization behavior of ferroelectric polarization, i.e., a marked increase in remanent polarization (P r) up to approximately 40 µC/cm2 induced by domain switching under high electric field, whereas the film with a lower thickness showed only a lower P r of approximately 11 µC/cm2 even under a high electric field. The ferroelectric property of the (100)-oriented PZT film after domain switching on ns-CN/Pt/Si can be comparable to those of (001)/(100)-oriented epitaxial PZT films.
Multi-layer micro/nanofluid devices with bio-nanovalves
Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.
2013-01-01
A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.
NASA Astrophysics Data System (ADS)
Wang, Hong; Wang, Jy-An J.; Ren, Fei; Chan, John
2016-04-01
Integration of smart patches into full-tension splice connectors in overhead power transmission lines was investigated. Lead zirconate titanate (PZT) -5A was used as a smart material and an aluminum beam was used as a host structure. Negative electrode termination was examined by using copper adhesive tape and direct bonding methods. Various commercial adhesives were studied for PZT integration onto the host structure. Aluminum beam specimens with integrated PZT smart patches were tested under thermal cycling at a temperature of 125°C, which is the higher-end temperature experienced by in-service aluminum conductor steel-reinforced cables. Electromechanical impedance (EMI) measurements were conducted at room temperature, and the root mean square deviation (RMSD) of the conductance signals was used to analyze the EMI data. It has been shown that the negative electrode method has an important effect on the performance of the integrated PZT. The PZT displayed more susceptibility to cracking when copper tape was used than when direct bonding was used. The reliability of PZT in direct bonding depended on the adhesives used in bonding layers. Although a hard alumina-based adhesive can lead to cracking of the PZT, a high-temperature epoxy with adequate flexibility, such as Duralco 4538D, can provide the desired performance under target thermal cycling conditions. The RMSD parameter can characterize conductance signatures effectively. It also was demonstrated that RMSD can be used to quantify the fatigue of the PZT integration system, although RMSD is used primarily as a damage index in monitoring structural health.
Structural health monitoring using a hybrid network of self-powered accelerometer and strain sensors
NASA Astrophysics Data System (ADS)
Alavi, Amir H.; Hasni, Hassene; Jiao, Pengcheng; Lajnef, Nizar
2017-04-01
This paper presents a structural damage identification approach based on the analysis of the data from a hybrid network of self-powered accelerometer and strain sensors. Numerical and experimental studies are conducted on a plate with bolted connections to verify the method. Piezoelectric ceramic Lead Zirconate Titanate (PZT)-5A ceramic discs and PZT-5H bimorph accelerometers are placed on the surface of the plate to measure the voltage changes due to damage progression. Damage is defined by loosening or removing one bolt at a time from the plate. The results show that the PZT accelerometers provide a fairly more consistent behavior than the PZT strain sensors. While some of the PZT strain sensors are not sensitive to the changes of the boundary condition, the bimorph accelerometers capture the mode changes from undamaged to missing bolt conditions. The results corresponding to the strain sensors are better indicator to the location of damage compared to the accelerometers. The characteristics of the overall structure can be monitored with even one accelerometer. On the other hand, several PZT strain sensors might be needed to localize the damage.
Wu, Dawei; Zhou, Qifa; Shung, Koping Kirk; Bharadwaja, Srowthi N; Zhang, Dongshe; Zheng, Haixing
2009-05-08
The use of PZT films in sliver-mode high-frequency ultrasonic transducers applications requires thick, dense, and crack-free films with excellent piezoelectric and dielectric properties. In this work, PZT composite solutions were used to deposit PZT films >10 μm in thickness. It was found that the functional properties depend strongly on the mass ratio of PZT sol-gel solution to PZT powder in the composite solution. Both the remanent polarization, P(r), and transverse piezoelectric coefficient, e(31,) (f), increase with increasing proportion of the sol-gel solution in the precursor. Films prepared using a solution-to-powder mass ratio of 0.5 have a remanent polarization of 8 μC/cm(2), a dielectric constant of 450 (at 1 kHz), and e(31,) (f) = -2.8 C/m(2). Increasing the solution-to-powder mass ratio to 6, the films were found to have remanent polarizations as large as 37 μC/cm(2), a dielectric constant of 1250 (at 1 kHz) and e(31,) (f) = -5.8 C/m(2).
A reusable PZT transducer for monitoring initial hydration and structural health of concrete.
Yang, Yaowen; Divsholi, Bahador Sabet; Soh, Chee Kiong
2010-01-01
During the construction of a concrete structure, strength monitoring is important to ensure the safety of both personnel and the structure. Furthermore, to increase the efficiency of in situ casting or precast of concrete, determining the optimal time of demolding is important for concrete suppliers. Surface bonded lead zirconate titanate (PZT) transducers have been used for damage detection and parameter identification for various engineering structures over the last two decades. In this work, a reusable PZT transducer setup for monitoring initial hydration of concrete and structural health is developed, where a piece of PZT is bonded to an enclosure with two bolts tightened inside the holes drilled in the enclosure. An impedance analyzer is used to acquire the admittance signatures of the PZT. Root mean square deviation (RMSD) is employed to associate the change in concrete strength with changes in the PZT admittance signatures. The results show that the reusable setup is able to effectively monitor the initial hydration of concrete and the structural health. It can also be detached from the concrete for future re-use.
A Reusable PZT Transducer for Monitoring Initial Hydration and Structural Health of Concrete
Yang, Yaowen; Divsholi, Bahador Sabet; Soh, Chee Kiong
2010-01-01
During the construction of a concrete structure, strength monitoring is important to ensure the safety of both personnel and the structure. Furthermore, to increase the efficiency of in situ casting or precast of concrete, determining the optimal time of demolding is important for concrete suppliers. Surface bonded lead zirconate titanate (PZT) transducers have been used for damage detection and parameter identification for various engineering structures over the last two decades. In this work, a reusable PZT transducer setup for monitoring initial hydration of concrete and structural health is developed, where a piece of PZT is bonded to an enclosure with two bolts tightened inside the holes drilled in the enclosure. An impedance analyzer is used to acquire the admittance signatures of the PZT. Root mean square deviation (RMSD) is employed to associate the change in concrete strength with changes in the PZT admittance signatures. The results show that the reusable setup is able to effectively monitor the initial hydration of concrete and the structural health. It can also be detached from the concrete for future re-use. PMID:22399929
Hydraulically amplified PZT mems actuator
Miles, Robin R.
2004-11-02
A hydraulically amplified microelectromechanical systems actuator. A piece of piezoelectric material or stacked piezo bimorph is bonded or deposited as a thin film. The piece is operatively connected to a primary membrane. A reservoir is operatively connected to the primary membrane. The reservoir contains a fluid. A membrane is operatively connected to the reservoir. In operation, energizing the piezoelectric material causing the piezoelectric material to bow. Bowing of the piezoelectric material causes movement of the primary membrane. Movement of the primary membrane results in a force in being transmitted to the liquid in the reservoir. The force in the liquid causes movement of the membrane. Movement of the membrane results in an operating actuator.
NASA Astrophysics Data System (ADS)
Kim, D. M.; Eom, C. B.; Nagarajan, V.; Ouyang, J.; Ramesh, R.; Vaithyanathan, V.; Schlom, D. G.
2006-04-01
We report the structural and longitudinal piezoelectric responses (d33) of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films on (001) SrTiO3 and Si substrates in the thickness range of 40nm -4μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d33 values of PZT films on Si substrates (˜330pm/V) are higher than those on SrTiO3 substrates (˜200pm /V). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.
NASA Astrophysics Data System (ADS)
Xu, Bin; Chen, Hongbing; Mo, Y.-L.; Zhou, Tianmin
2018-07-01
Piezoelectric-lead-zirconate-titanate(PZT)-based interface debonding defects detection for concrete filled steel tubulars (CFSTs) has been proposed and validated through experiments, and numerical study on its mechanism has been carried out recently by assuming that concrete material is homogenous. However, concrete is composed of coarse and fine aggregates, mortar and interface transition zones (ITZs) and even initial defects and is a typical nonhomogeneous material and its mesoscale structure might affect the wave propagation in the concrete core of CFST members. Therefore, it is significantly important to further investigate the influence of mesoscale structure of concrete on the stress wave propagation and the response of embedded PZT sensor for the interface debonding detection. In this study, multi-physical numerical simulation on the wave propagation and embedded PZT sensor response of rectangular CFST members with numerical concrete core considering the randomness in circular aggregate distribution, and coupled with surface-mounted PZT actuator and embedded PZT sensor is carried out. The effect of randomness in the circular aggregates distribution and the existence of ITZs are discussed. Both a local stress wave propagation behavior including transmission, reflection, and diffraction at the interface between concrete core and steel tube under a pulse signal excitation and a global wave field in the cross-section of the rectangular CFST models without and with interface debonding defects under sweep frequency excitation are simulated. The sensitivity of an evaluation index based on wavelet packet analysis on the embedded PZT sensor response on the variation of mesoscale parameters of concrete core without and with different interface debonding defects under sweep frequency voltage signal is investigated in details. The results show that the effect of the interface debondings on the embedded PZT measurement is dominant when compared to the meso-scale structures of concrete core. This study verified the feasibility of the PZT based debonding detection for rectangular CFST members even the meso-scale structure of concrete core is considered.
Model-Based, Closed-Loop Control of PZT Creep for Cavity Ring-Down Spectroscopy
McCartt, A D; Ognibene, T J; Bench, G; Turteltaub, K W
2014-01-01
Cavity ring-down spectrometers typically employ a PZT stack to modulate the cavity transmission spectrum. While PZTs ease instrument complexity and aid measurement sensitivity, PZT hysteresis hinders the implementation of cavity-length-stabilized, data-acquisition routines. Once the cavity length is stabilized, the cavity’s free spectral range imparts extreme linearity and precision to the measured spectrum’s wavelength axis. Methods such as frequency-stabilized cavity ring-down spectroscopy have successfully mitigated PZT hysteresis, but their complexity limits commercial applications. Described herein is a single-laser, model-based, closed-loop method for cavity length control. PMID:25395738
Model-Based, Closed-Loop Control of PZT Creep for Cavity Ring-Down Spectroscopy.
McCartt, A D; Ognibene, T J; Bench, G; Turteltaub, K W
2014-09-01
Cavity ring-down spectrometers typically employ a PZT stack to modulate the cavity transmission spectrum. While PZTs ease instrument complexity and aid measurement sensitivity, PZT hysteresis hinders the implementation of cavity-length-stabilized, data-acquisition routines. Once the cavity length is stabilized, the cavity's free spectral range imparts extreme linearity and precision to the measured spectrum's wavelength axis. Methods such as frequency-stabilized cavity ring-down spectroscopy have successfully mitigated PZT hysteresis, but their complexity limits commercial applications. Described herein is a single-laser, model-based, closed-loop method for cavity length control.
NASA Astrophysics Data System (ADS)
Deng, Qihuang; Fan, Yuchi; Wang, Lianjun; Xiong, Zhi; Wang, Hongzhi; Li, Yaogang; Zhang, Qinghong; Kawasaki, Akira; Jiang, Wan
2012-01-01
Pb(Zr,Ti)O3 (PZT) ceramics were prepared by the conventional mixed oxide method, and the strength of the resultant PZT ceramics was evaluated using modified small punch (MSP) tests. Load-displacement curve test results showed that the crack-initiation and fracture strengths of PZT ceramics decreased after polarization. The effect of the polarization accelerated the fatigue properties of PZT ceramics. Scanning electron microscopy (SEM) results showed that microcracks were formed before the maximum load in the MSP test, and the first load drop corresponded to crack initiation.
Liu, Changgeng; Zhou, Qifa; Djuth, Frank T.; Shung, K. Kirk
2012-01-01
This paper describes the development and characterization of a high-frequency (65-MHz) ultrasound transducer linear array. The array was built from bulk PZT which was etched using an optimized chlorine-based plasma dry-etching process. The median etch rate of 8 μm/h yielded a good profile (wall) angle (>83°) and a reasonable processing time for etch depths up to 40 μm (which corresponds to a 50-MHz transducer). A backing layer with an acoustic impedance of 6 MRayl and a front-end polymer matching layer yielded a transducer bandwidth of 40%. The major parameters of the transducer have been characterized. The two-way insertion loss and crosstalk between adjacent channels at the center frequency are 26.5 and −25 dB, respectively. PMID:24626041
NASA Astrophysics Data System (ADS)
Zhang, X. D.; Dho, Joonghoe; Park, Sungmin; Kwon, Hyosang; Hwang, Jihwan; Park, Gwangseo; Kwon, Daeyoung; Kim, Bongju; Jin, Yeryeong; Kim, Bog. G.; Karpinsky, D.; Kholkin, A. L.
2011-09-01
In this work, we investigated structural, electrical, and magnetic properties of ferroelectric PbZr0.2Ti0.8O3 (PZT) and ferrimagnetic/ferroelectric [CoFe2O4(CFO)/PZT] bilayers grown on (100)LaAlO3 (LAO) substrates supplied with bottom 50 nm thick LaNiO3 electrodes. Interestingly, structural and electrical properties of the PZT layer exhibited remarkable changes after the top-layer CFO deposition. X-ray diffraction data suggested that both the c- and a-domains exist in the PZT layer and the tetragonality of the PZT decreases upon the top-layer deposition. A variation in the electrical properties of the PZT layer upon the CFO deposition was investigated by polarization versus voltage (P-V), capacitance versus voltage (C-V), and capacitance versus frequency (C-f) measurements. The CFO deposition induced a slight decrease of the remnant polarization and more symmetric behavior of P-V loops as well as led to the improvement of fatigue behavior. The tentative origin of enhanced fatigue endurance is discussed based on the measurement results. These results were corroborated by local piezoelectric measurements. Ferrimagnetic property of the CFO/PZT bilayer was confirmed by magnetic measurement at room temperature.
NASA Astrophysics Data System (ADS)
Vinod, P. N.; Joseph, Sherin; John, Reji
2017-04-01
In this paper, efficacy of pulsed thermography technique has been explored for the first time for the detection and quantification of the subsurface defects present in the rubber-encapsulated piezoelectric sensors. Initial experiments were performed on adhesively bonded joints of the rubber/Al or rubber/PZT control samples to find out an optimum acquisition time for the 3-mm rubber encapsulants. Thermographic measurements were performed in the reflection mode and acquired thermal images were analysed and processed images were described in terms of the phase images. The defective regions are identified as delamination of the adhesive joints at the interface of rubber and PZT stacks, and presence of porosity in the encapsulation in the inspected hydrophone. The defect depths of the observed anomalies were calculated empirically from the plots of the peak time of thermal contrast (tmax) maximum and thermal contrast maximum (Cmax) for a particular defect. The estimated defect depths of the prominent porosity observed in the PZT hydrophone are found nearly 1 mm from the surface.
Yan, Gang; Zhou, Li
2018-02-21
This paper proposes an innovative method for identifying the locations of multiple simultaneous acoustic emission (AE) events in plate-like structures from the view of image processing. By using a linear lead zirconium titanate (PZT) sensor array to record the AE wave signals, a reverse-time frequency-wavenumber (f-k) migration is employed to produce images displaying the locations of AE sources by back-propagating the AE waves. Lamb wave theory is included in the f-k migration to consider the dispersive property of the AE waves. Since the exact occurrence time of the AE events is usually unknown when recording the AE wave signals, a heuristic artificial bee colony (ABC) algorithm combined with an optimal criterion using minimum Shannon entropy is used to find the image with the identified AE source locations and occurrence time that mostly approximate the actual ones. Experimental studies on an aluminum plate with AE events simulated by PZT actuators are performed to validate the applicability and effectiveness of the proposed optimal image-based AE source identification method.
NASA Astrophysics Data System (ADS)
Joseph, Sherin; Kumar, A. V. Ramesh; John, Reji
2017-11-01
Lead zirconate titanate (PZT) is one of the most important piezoelectric materials widely used for underwater sensors. However, PZTs are hard and non-compliant and hence there is an overwhelming attention devoted toward making it flexible by preparing films on flexible substrates by different routes. In this work, the electrochemical deposition of composition controlled PZT films over flexible stainless steel (SS) foil substrates using non-aqueous electrolyte dimethyl sulphoxide (DMSO) was carried out. Effects of various key parameters involved in electrochemical deposition process such as current density and time of deposition were studied. It was found that a current density of 25 mA/cm2 for 5 min gave a good film. The morphology and topography evaluation of the films was carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively, which showed a uniform morphology with a surface roughness of 2 nm. The PZT phase formation was studied using X-ray diffraction (XRD) and corroborated with Raman spectroscopic studies. The dielectric constant, dielectric loss, hysteresis and I-V characteristics of the film was evaluated.
Saito, Yasuyoshi; Takao, Hisaaki; Tani, Toshihiko; Nonoyama, Tatsuhiko; Takatori, Kazumasa; Homma, Takahiko; Nagaya, Toshiatsu; Nakamura, Masaya
2004-11-04
Lead has recently been expelled from many commercial applications and materials (for example, from solder, glass and pottery glaze) owing to concerns regarding its toxicity. Lead zirconium titanate (PZT) ceramics are high-performance piezoelectric materials, which are widely used in sensors, actuators and other electronic devices; they contain more than 60 weight per cent lead. Although there has been a concerted effort to develop lead-free piezoelectric ceramics, no effective alternative to PZT has yet been found. Here we report a lead-free piezoelectric ceramic with an electric-field-induced strain comparable to typical actuator-grade PZT. We achieved this through the combination of the discovery of a morphotropic phase boundary in an alkaline niobate-based perovskite solid solution, and the development of a processing route leading to highly <001> textured polycrystals. The ceramic exhibits a piezoelectric constant d33 (the induced charge per unit force applied in the same direction) of above 300 picocoulombs per newton (pC N(-1)), and texturing the material leads to a peak d33 of 416 pC N(-1). The textured material also exhibits temperature-independent field-induced strain characteristics.
Zhou, Li
2018-01-01
This paper proposes an innovative method for identifying the locations of multiple simultaneous acoustic emission (AE) events in plate-like structures from the view of image processing. By using a linear lead zirconium titanate (PZT) sensor array to record the AE wave signals, a reverse-time frequency-wavenumber (f-k) migration is employed to produce images displaying the locations of AE sources by back-propagating the AE waves. Lamb wave theory is included in the f-k migration to consider the dispersive property of the AE waves. Since the exact occurrence time of the AE events is usually unknown when recording the AE wave signals, a heuristic artificial bee colony (ABC) algorithm combined with an optimal criterion using minimum Shannon entropy is used to find the image with the identified AE source locations and occurrence time that mostly approximate the actual ones. Experimental studies on an aluminum plate with AE events simulated by PZT actuators are performed to validate the applicability and effectiveness of the proposed optimal image-based AE source identification method. PMID:29466310
Modified PZT ceramics as a material that can be used in micromechatronics
NASA Astrophysics Data System (ADS)
Zachariasz, Radosław; Bochenek, Dariusz
2015-11-01
Results on investigations of the PZT type ceramics with the following chemical composition: Pb0.94Sr0.06(Zr0.50 Ti0.50)0.99 Cr0.01O3 (PSZTC) which belongs to a group of multicomponent ceramic materials obtained on basis of the PZT type solid solution, are presented in this work. Ceramics PSZTC was obtained by a free sintering method under the following conditions: Tsint = 1250 °C and tsint = 2 h. Ceramic compacts of specimens for the sintering process were made from the ceramic mass consisting of a mixture of the synthesized PSZTC powder and 3% polyvinyl alcohol while wet. The PSZTC ceramic specimens were subjected to poling by two methods: low temperature and high temperature. On the basis of the examinations made it has been found that the ceramics obtained belongs to ferroelectric-hard materials and that is why it may be used to build resonators, filters and ultrasonic transducers. Contribution to the Topical Issue "Materials for Dielectric Applications" edited by Maciej Jaroszewski and Sabu Thomas.
Sato, Shinichi; Ishida-Nakajima, Wako; Ishida, Akira; Kawamura, Masanari; Miura, Shinobu; Ono, Kyoichi; Inagaki, Nobuya; Takada, Goro; Takahashi, Tsutomu
2010-01-01
Electrocardiogram (ECG) and impedance pneumography (IPG), the most widely used techniques for cardiorespiratory monitoring in the neonatal intensive care unit (NICU), have the disadvantage of causing skin damage when used for very premature newborn infants. To prevent skin damage, we designed a new piezoelectric transducer (PZT) sensor. To assess the potential of the PZT sensor for cardiorespiratory monitoring in the NICU. The PZT sensor was placed under a folded towel under a neonate to detect an acoustic cardiorespiratory signal, from which heart rate (HR) and breathing rate (BR) were calculated, together with simultaneous ECG/IPG recording for 1-9 days for long and brief (1-min) assessment. The brief assessment showed average correlation coefficients of 0.92 +/- 0.12 and 0.95 +/- 0.02 between instantaneous HRs/BRs detected by the PZT sensor and ECG/IPG in 27 and 11 neonates examined. During the long assessment, the HR detection rate by the PZT sensor was approximately 10% lower than that by ECG (82.6 +/- 12.9 vs. 91.8 +/- 4.1%; p = 0.001, n = 27), although comparable (90.3 +/- 4.1 vs. 92.5 +/- 3.4%, p = 0.081) in approximately 70% (18/27) of neonates examined; BR detection rate was comparable between the PZT sensor and IPG during relatively stable signal conditions (95.9 +/- 4.0 vs. 95.3 +/- 3.5%; p = 0.38, n = 11). The PZT sensor caused neither skin damage nor body movement increase in all neonates examined. The PZT sensor is noninvasive and does not cause skin irritation, and we believe it does provide a reliable, accurate cardiorespiratory monitoring tool for use in the NICU, although the issue of mechanical-ventilation noise remains to be solved. Copyright 2010 S. Karger AG, Basel.
Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng
2016-12-08
Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm -3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application.
Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng
2016-01-01
Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm−3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application. PMID:27929139
Role of random electric fields in relaxors
Phelan, Daniel; Stock, Christopher; Rodriguez-Rivera, Jose A.; Chi, Songxue; Leão, Juscelino; Long, Xifa; Xie, Yujuan; Bokov, Alexei A.; Ye, Zuo-Guang; Ganesh, Panchapakesan; Gehring, Peter M.
2014-01-01
PbZr1–xTixO3 (PZT) and Pb(Mg1/3Nb2/3)1–xTixO3 (PMN-xPT) are complex lead-oxide perovskites that display exceptional piezoelectric properties for pseudorhombohedral compositions near a tetragonal phase boundary. In PZT these compositions are ferroelectrics, but in PMN-xPT they are relaxors because the dielectric permittivity is frequency dependent and exhibits non-Arrhenius behavior. We show that the nanoscale structure unique to PMN-xPT and other lead-oxide perovskite relaxors is absent in PZT and correlates with a greater than 100% enhancement of the longitudinal piezoelectric coefficient in PMN-xPT relative to that in PZT. By comparing dielectric, structural, lattice dynamical, and piezoelectric measurements on PZT and PMN-xPT, two nearly identical compounds that represent weak and strong random electric field limits, we show that quenched (static) random fields establish the relaxor phase and identify the order parameter. PMID:24449912
Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure
NASA Astrophysics Data System (ADS)
Pintilie, Lucian; Stancu, Viorica; Trupina, L.; Pintilie, Ioana
2010-08-01
A single ferroelectric Schottky diode was obtained on a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta (SRO-PZT20/80-Ta) structure in which the SRO-PZT20/80 interface is the rectifying contact and the PZT20/80-Ta interface behaves as a quasiohmic contact. Both the capacitance-voltage (C-V) and the current-voltage (I-V) characteristics show the memory effect due to the ferroelectric polarization. However, retention studies had revealed that only the “down” orientation of ferroelectric polarization is stable in time (polarization oriented from top to bottom contact). The analysis of the experimental results suggests that the PZT20/80 is n type and that the stable orientation of polarization is related to the presence of a depletion region at the SRO-PZT20/80 Schottky interface.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ghonge, S.G.; Goo, E.; Ramesh, R.
1994-12-31
TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less
Ultra-High Sensitive Magnetoelectric Nanocomposite Current Sensors
2009-12-01
textured grains. In the sintered composite, PZT -PZN...constant increases by 50% for the moderate degree of texturing . Figure 8 shows the ME coefficient of trilayer with textured PZT – PZN as function of DC...1000 1100 d E /d H ( m V /c m .O e ) Field (Oe) NCZF - PZT - PZN ( textured ) - NCZF Figure 8: ME coefficient of the textured ME composite.
Multiscale Modeling of Advanced Materials for Damage Prediction and Structural Health Monitoring
2015-05-01
Viscoplasticity Model ................................................. 71 4.1. PZT (APC 850) Orthotropic Properties...surface-mounted lead zirconate titanate ( PZT ) transducer using a coupled FEM-normal mode expansion method. Other researchers have also utilized the...orthotropic material properties of the PZT piezoelectric actuators and sensors are presented in Table 4.1. A 5 cycle cosine tone burst signal, seen in
Exploring the piezoelectric performance of PZT particulate-epoxy composites loaded in shear
NASA Astrophysics Data System (ADS)
Van Loock, F.; Deutz, D. B.; van der Zwaag, S.; Groen, W. A.
2016-08-01
The active and passive piezoelectric response of lead zirconium titanate (PZT)-epoxy particulate composites loaded in shear is studied using analytical models, a finite element model and by experiments. The response is compared to that of the same composites when loaded in simple tension. Analogously to bulk PZT, particulate PZT-polymer composites loaded in shear show higher piezoelectric charge coefficient (d 15) and energy density figure of merit (FOM15) values compared to simple tension (d 33) and (FOM33). This outcome demonstrates the as-yet barely explored potential of piezoelectric particulate composites for optimal strain energy harvesting when activated in shear.
NASA Astrophysics Data System (ADS)
Liu, Yuan-Ming; Li, Fa-Xin; Fang, Dai-Ning
2007-01-01
The authors report an observation of anisotropic domain switching process in prepoled lead titanate zirconate (PZT) ceramics under multiaxial electrical loading. Prepoled PZT blocks were obliquely cut to apply an electric field at discrete angles θ (0°-180°) to the initial poling direction. Both the coercive field and switchable polarization are found to decrease significantly when sinθ increases from zero to unity. The measured strain curves show that most domains that accomplished 180° domain switching actually experienced two successive 90° switching. The oriented domain texture after poling plus the induced nonuniform stress are used to explain the observed domain switching anisotropy.
NASA Astrophysics Data System (ADS)
Wu, F.; Yi, J.; Li, W. J.
2014-03-01
An active sensing diagnostic system for reinforced concrete SHM has been under investigation. Test results show that the system can detect the damage of the structure. To fundamentally understand the damage algorithm and therefore to establish a robust diagnostic method, accurate Finite Element Analysis (FEA) for the system becomes essential. For the system, a rebar with surface bonded PZT under a transient wave load was simulated and analyzed using commercial FEA software. A detailed 2D axi-symmetric model for a rebar attaching PZT was first established. The model simulates the rebar with wedges, an epoxy adhesive layer, as well as a PZT layer. PZT material parameter transformation with high order tensors was discussed due to the format differences between IEEE Standard and ANSYS. The selection of material properties such as Raleigh damping coefficients was discussed. The direct coupled-field analysis type was selected during simulation. The results from simulation matched well with the experimental data. Further simulation for debonding damage detection for concrete beam with the PZT rebar has been performed. And the numerical results have been validated with test results too. The good consistency between two proves that the numerical models were reasonably accurate. Further system optimization has been performed based on these models. By changing PZT layout and size, the output signals could be increased with magnitudes. And the damage detection signals have been found to be increased exponentially with the debonding size of the rebar.
NASA Astrophysics Data System (ADS)
van den Ende, D. A.; Maier, R. A.; van Neer, P. L. M. J.; van der Zwaag, S.; Randall, C. A.; Groen, W. A.
2013-01-01
In this work, the piezoelectric properties at high electric fields of dielectrophoretically aligned PZT—polymer composites containing high aspect ratio particles (such as short fibers) are presented. Polarization and strain as a function of electric field are evaluated. The properties of the composites are compared to those of PZT-polymer composites with equiaxed particles, continuous PZT fiber-polymer composites, and bulk PZT ceramics. From high-field polarization and strain measurements, the effective field dependent permittivity and piezoelectric charge constant in the poling direction are determined for dielectrophoresis structured PZT-polymer composites, continuous PZT fiber-polymer composites, and bulk PZT ceramics. The changes in dielectric properties of the inclusions and the matrix at high fields influence the dielectric and piezoelectric properties of the composites. It is found that the permittivity and piezoelectric charge constants increase towards a maximum at an applied field of around 2.5-5 kV/mm. The electric field at which the maximum occurs depends on the aspect ratio and degree of alignment of the inclusions. Experimental values of d33 at low and high applied fields are compared to a model describing the composites as a continuous polymer matrix containing PZT particles of various aspect ratios arranged into chains. Thickness mode coupling factors were determined from measured impedance data using fitted equivalent circuit model simulations. The relatively high piezoelectric strain constants, voltage constants, and thickness coupling factors indicate that such aligned short fiber composites could be useful as flexible large area transducers.
Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes
2016-01-01
Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240
Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes
2016-02-03
Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.
Reversible Solid Adhesion for Defense Applications
2008-01-31
sensitive. Referring to Fig. 2(a), using the two closed-loop piezoelectric ( PZT ) actuators, the vertical and horizontal velocities of the...approaching/retracting contacting surfaces can be independently controlled. The displacement resolution of the vertical PZT actuator is 0.6 nm, and the total...interfacial forces are measured using the prototype custom-made capacity-type force transducer which is attached directly on the upper PZT actuator. In order
Svečko, Rajko; Kusić, Dragan; Kek, Tomaž; Sarjaš, Andrej; Hančič, Aleš; Grum, Janez
2013-05-14
This paper presents an improved monitoring system for the failure detection of engraving tool steel inserts during the injection molding cycle. This system uses acoustic emission PZT sensors mounted through acoustic waveguides on the engraving insert. We were thus able to clearly distinguish the defect through measured AE signals. Two engraving tool steel inserts were tested during the production of standard test specimens, each under the same processing conditions. By closely comparing the captured AE signals on both engraving inserts during the filling and packing stages, we were able to detect the presence of macro-cracks on one engraving insert. Gabor wavelet analysis was used for closer examination of the captured AE signals' peak amplitudes during the filling and packing stages. The obtained results revealed that such a system could be used successfully as an improved tool for monitoring the integrity of an injection molding process.
Svečko, Rajko; Kusić, Dragan; Kek, Tomaž; Sarjaš, Andrej; Hančič, Aleš; Grum, Janez
2013-01-01
This paper presents an improved monitoring system for the failure detection of engraving tool steel inserts during the injection molding cycle. This system uses acoustic emission PZT sensors mounted through acoustic waveguides on the engraving insert. We were thus able to clearly distinguish the defect through measured AE signals. Two engraving tool steel inserts were tested during the production of standard test specimens, each under the same processing conditions. By closely comparing the captured AE signals on both engraving inserts during the filling and packing stages, we were able to detect the presence of macro-cracks on one engraving insert. Gabor wavelet analysis was used for closer examination of the captured AE signals' peak amplitudes during the filling and packing stages. The obtained results revealed that such a system could be used successfully as an improved tool for monitoring the integrity of an injection molding process. PMID:23673677
Influence of polarized PZT on the crystal growth of calcium phosphate
NASA Astrophysics Data System (ADS)
Sun, Xiaodan; Ma, Chunlai; Wang, Yude; Li, Hengde
2002-01-01
The effects of polarization on the crystallization of calcium phosphate are studied in this work. Crystals of calcium phosphate from saturated solution of hydroxyapatite (HA, Ca 10(PO 4) 6(OH) 2) were deposited on the surfaces of ferroelectric ceramics lead zirconate titanium (Pb(Ti,Zr)O 3, PZT). The results of the experiment demonstrated the acceleration effects of polarized PZT on the crystal growth of calcium phosphate. Furthermore, it is indicated that polarization also influenced the orientation of the deposited crystals due to the growth of a layer of (0 0 2) oriented octacalcium phosphate (OCP, Ca 8H 2(PO 4) 6·5H 2O) on the negatively charged surfaces of PZT.
Health monitoring and rehabilitation of a concrete structure using intelligent materials
NASA Astrophysics Data System (ADS)
Song, G.; Mo, Y. L.; Otero, K.; Gu, H.
2006-04-01
This paper presents the concept of an intelligent reinforced concrete structure (IRCS) and its application in structural health monitoring and rehabilitation. The IRCS has multiple functions which include self-rehabilitation, self-vibration damping, and self-structural health monitoring. These functions are enabled by two types of intelligent (smart) materials: shape memory alloys (SMAs) and piezoceramics. In this research, Nitinol type SMA and PZT (lead zirconate titanate) type piezoceramics are used. The proposed concrete structure is reinforced by martensite Nitinol cables using the method of post-tensioning. The martensite SMA significantly increases the concrete's damping property and its ability to handle large impact. In the presence of cracks due to explosions or earthquakes, by electrically heating the SMA cables, the SMA cables contract and close up the cracks. In this research, PZT patches are embedded in the concrete structure to detect possible cracks inside the concrete structure. The wavelet packet analysis method is then applied as a signal-processing tool to analyze the sensor signals. A damage index is defined to describe the damage severity for health monitoring purposes. In addition, by monitoring the electric resistance change of the SMA cables, the crack width can be estimated. To demonstrate this concept, a concrete beam specimen with reinforced SMA cables and with embedded PZT patches is fabricated. Experiments demonstrate that the IRC has the ability of self-sensing and self-rehabilitation. Three-point bending tests were conducted. During the loading process, a crack opens up to 0.47 inches. Upon removal of the load and heating the SMA cables, the crack closes up. The damage index formed by wavelet packet analysis of the PZT sensor data predicts and confirms the onset and severity of the crack during the loading. Also during the loading, the electrical resistance value of the SMA cable changes by up to 27% and this phenomenon is used to monitor the crack width.
Modeling injection molding of net-shape active ceramic components.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Baer, Tomas; Cote, Raymond O.; Grillet, Anne Mary
2006-11-01
To reduce costs and hazardous wastes associated with the production of lead-based active ceramic components, an injection molding process is being investigated to replace the current machining process. Here, lead zirconate titanate (PZT) ceramic particles are suspended in a thermoplastic resin and are injected into a mold and allowed to cool. The part is then bisque fired and sintered to complete the densification process. To help design this new process we use a finite element model to describe the injection molding of the ceramic paste. Flow solutions are obtained using a coupled, finite-element based, Newton-Raphson numerical method based on themore » GOMA/ARIA suite of Sandia flow solvers. The evolution of the free surface is solved with an advanced level set algorithm. This approach incorporates novel methods for representing surface tension and wetting forces that affect the evolution of the free surface. Thermal, rheological, and wetting properties of the PZT paste are measured for use as input to the model. The viscosity of the PZT is highly dependent both on temperature and shear rate. One challenge in modeling the injection process is coming up with appropriate constitutive equations that capture relevant phenomenology without being too computationally complex. For this reason we model the material as a Carreau fluid and a WLF temperature dependence. Two-dimensional (2D) modeling is performed to explore the effects of the shear in isothermal conditions. Results indicate that very low viscosity regions exist near walls and that these results look similar in terms of meniscus shape and fill times to a simple Newtonian constitutive equation at the shear-thinned viscosity for the paste. These results allow us to pick a representative viscosity to use in fully three-dimensional (3D) simulation, which because of numerical complexities are restricted to using a Newtonian constitutive equation. Further 2D modeling at nonisothermal conditions shows that the choice of representative Newtonian viscosity is dependent on the amount of heating of the initially room temperature mold. An early 3D transient model shows that the initial design of the distributor is sub-optimal. However, these simulations take several months to run on 4 processors of an HP workstation using a preconditioner/solver combination of ILUT/GMRES with fill factors of 3 and PSPG stabilization. Therefore, several modifications to the distributor geometry and orientations of the vents and molds have been investigated using much faster 3D steady-state simulations. The pressure distribution for these steady-state calculations is examined for three different distributor designs to see if this can indicate which geometry has the superior design. The second modification, with a longer distributor, is shown to have flatter, more monotonic isobars perpendicular to the flow direction indicating a better filling process. The effects of the distributor modifications, as well as effects of the mold orientation, have also been examined with laboratory experiments in which the flow of a viscous Newtonian oil entering transparent molds is recorded visually. Here, the flow front is flatter and voids are reduced for the second geometry compared to the original geometry. A horizontal orientation, as opposed to the planned vertical orientation, results in fewer voids. Recently, the Navier-Stokes equations have been stabilized with the Dohrman-Bochev PSPP stabilization method, allowing us to calculate transient 3D simulations with computational times on the order of days instead of months. Validation simulations are performed and compared to the experiments. Many of the trends of the experiments are captured by the level set modeling, though quantitative agreement is lacking mainly due to the high value of the gas phase viscosity necessary for numerical stability, though physically unrealistic. More correct trends are predicted for the vertical model than the horizontal model, which is serendipitous as the actual mold is held in a vertical geometry. The full, transient mold filling calculations indicate that the flow front is flatter and voids may be reduced for the second geometry compared to the original geometry. The validated model is used to predict mold filling for the actual process with the material properties for the PZT paste, the original distributor geometry, and the mold in a vertical orientation. This calculation shows that voids may be trapped at the four corners of the mold opposite the distributor.« less
Mechanical and electrical strain response of a piezoelectric auxetic PZT lattice structure
NASA Astrophysics Data System (ADS)
Fey, Tobias; Eichhorn, Franziska; Han, Guifang; Ebert, Kathrin; Wegener, Moritz; Roosen, Andreas; Kakimoto, Ken-ichi; Greil, Peter
2016-01-01
A two-dimensional auxetic lattice structure was fabricated from a PZT piezoceramic. Tape casted and sintered sheets with a thickness of 530 μm were laser cut into inverted honeycomb lattice structure with re-entrant cell geometry (θ = -25°) and poling direction oriented perpendicular to the lattice plane. The in-plane strain response upon applying an uniaxial compression load as well as an electric field perpendicular to the lattice plane were analyzed by a 2D image data detection analysis. The auxetic lattice structure exhibits orthotropic deformation behavior with a negative in-plane Poisson’s ratio of -2.05. Compared to PZT bulk material the piezoelectric auxetic lattice revealed a strain amplification by a factor of 30-70. Effective transversal coupling coefficients {{d}al}31 of the PZT lattice exceeding 4 × 103 pm V-1 were determined which result in an effective hydrostatic coefficient {{d}al}h 66 times larger than that of bulk PZT.
NASA Astrophysics Data System (ADS)
Huynh, Thanh-Canh; Kim, Jeong-Tae
2017-12-01
In this study, the quantification of temperature effect on impedance monitoring via a PZT interface for prestressed tendon-anchorage is presented. Firstly, a PZT interface-based impedance monitoring technique is selected to monitor impedance signatures by predetermining sensitive frequency bands. An analytical model is designed to represent coupled dynamic responses of the PZT interface-tendon anchorage system. Secondly, experiments on a lab-scaled tendon anchorage are described. Impedance signatures are measured via the PZT interface for a series of temperature and prestress-force changes. Thirdly, temperature effects on measured impedance responses of the tendon anchorage are estimated by quantifying relative changes in impedance features (such as RMSD and CCD indices) induced by temperature variation and prestress-force change. Finally, finite element analyses are conducted to investigate the mechanism of temperature variation and prestress-loss effects on the impedance responses of prestressed tendon anchorage. Temperature effects on impedance monitoring are filtered by effective frequency shift-based algorithm for distinguishing prestress-loss effects on impedance signatures.
Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess
NASA Astrophysics Data System (ADS)
Gueye, Ibrahima; Le Rhun, Gwenael; Renault, Olivier; Defay, Emmanuel; Barrett, Nicholas
2017-11-01
We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr0.52Ti0.48O3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrOx surface phase. Low Pb excess gives rise to a discontinuous layer of ZrOx on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.
Flexible graphene-PZT ferroelectric nonvolatile memory.
Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun
2013-11-29
We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.
Conventional and two step sintering of PZT-PCN ceramics
NASA Astrophysics Data System (ADS)
Keshavarzi, Mostafa; Rahmani, Hooman; Nemati, Ali; Hashemi, Mahdieh
2018-02-01
In this study, PZT-PCN ceramic was made via sol-gel seeding method and effects of conventional sintering (CS) as well as two-step sintering (TSS) were investigated on microstructure, phase formation, density, dielectric and piezoelectric properties. First, high quality powder was achieved by seeding method in which the mixture of Co3O4 and Nb2O5 powder was added to the prepared PZT sol to form PZT-PCN gel. After drying and calcination, pyrochlore free PZT-PCN powder was synthesized. Second, CS and TSS were applied to achieve dense ceramic. The optimum temperature used for 2 h of conventional sintering was obtained at 1150 °C; finally, undesired ZrO2 phase formed in CS procedure was removed successfully with TSS procedure and dielectric and piezoelectric properties were improved compared to the CS procedure. The best electrical properties obtained for the sample sintered by TSS in the initial temperature of T 1 = 1200 °C and secondary temperature of T 2 = 1000 °C for 12 h.
Han, Jin Kyu; Jeon, Do Hyun; Cho, Sam Yeon; Kang, Sin Wook; Yang, Sun A.; Bu, Sang Don; Myung, Sung; Lim, Jongsun; Choi, Moonkang; Lee, Minbaek; Lee, Min Ku
2016-01-01
We report the first attempt to prepare a flexoelectric nanogenerator consisting of direct-grown piezoelectrics on multi-walled carbon nanotubes (mwCNT). Direct-grown piezoelectrics on mwCNTs are formed by a stirring and heating method using a Pb(Zr0.52Ti0.48)O3 (PZT)-mwCNT precursor solution. We studied the unit cell mismatch and strain distribution of epitaxial PZT nanoparticles, and found that lattice strain is relaxed along the growth direction. A PZT-mwCNT nanogenerator was found to produce a peak output voltage of 8.6 V and an output current of 47 nA when a force of 20 N is applied. Direct-grown piezoelectric nanogenerators generate a higher voltage and current than simple mixtures of PZT and CNTs resulting from the stronger connection between PZT crystals and mwCNTs and an enhanced flexoelectric effect caused by the strain gradient. These experiments represent a significant step toward the application of nanogenerators using piezoelectric nanocomposite materials. PMID:27406631
Oxygen vacancy as fatigue evidence of La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 capacitors
NASA Astrophysics Data System (ADS)
Liu, B. T.; Chen, J. E.; Sun, J.; Wei, D. Y.; Chen, J. H.; Li, X. H.; Bian, F.; Zhou, Y.; Guo, J. X.; Zhao, Q. X.; Guan, L.; Wang, Y. L.; Guo, Q. L.; Ma, L. X.
2010-09-01
La0.5Sr0.5CoO3 (LSCO) films grown on SrTiO3 substrates, cooled at reduced oxygen pressures, ranging from 8×104 to 1×10-4 Pa, from the depostion temperature, are used as the bottom electrodes of PbZr0.4Ti0.6O3 (PZT) capacitors to study the impact of oxygen stoichiometry of the LSCO bottom electrodes on the structural and physical properties of LSCO/PZT/LSCO capacitors. It is found that the tetragonality, polarization and fatigue-resistance of PZT films decrease with the decrease of the cooling oxygen pressure. Almost 60% polarization degradation occurs for the PZT capacitor with the LSCO bottom electrode cooled in 1×10-4 Pa oxygen up to 1010 switching cycles, indicating that the oxygen vacancy of the bottom electrode can result in fatigue of the LSCO/PZT/LSCO capacitor.
Ferroelectric polymer-ceramic composite thick films for energy storage applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Singh, Paritosh; Borkar, Hitesh; Singh, B. P.
2014-08-15
We have successfully fabricated large area free standing polyvinylidene fluoride -Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PVDF-PZT) ferroelectric polymer-ceramic composite (wt% 80–20, respectively) thick films with an average diameter (d) ∼0.1 meter and thickness (t) ∼50 μm. Inclusion of PZT in PVDF matrix significantly enhanced dielectric constant (from 10 to 25 at 5 kHz) and energy storage capacity (from 11 to 14 J/cm{sup 3}, using polarization loops), respectively, and almost similar leakage current and mechanical strength. Microstructural analysis revealed the presence of α and β crystalline phases and homogeneous distribution of PZT crystals in PVDF matrix. It was also found that apartmore » from the microcrystals, well defined naturally developed PZT nanocrystals were embedded in PVDF matrix. The observed energy density indicates immense potential in PVDF-PZT composites for possible applications as green energy and power density electronic elements.« less
NASA Astrophysics Data System (ADS)
Zhu, Hui; Chen, Yueyuan; Chu, Daping; Feng, Shiwei; Zhang, Yingqiao; Wang, Pengfei
2016-09-01
The fatigue of lead zirconate titanate (PZT) thin films was measured under repetitive switching using asymmetric square waves. The remnant polarization and coercive voltage were found to present regular changes in the initial 10 s, independent of the asymmetry or frequency of switching waves. We attributed the change to the relaxation of stress in the film and identified a coercive voltage V 0 of 0.6 V for the stress-free film. By comparing the coercive voltage and V 0, we found that a built-in electric field was induced by asymmetric switching, where the direction and magnitude were dependent on the degree of waveform asymmetry. Furthermore, the fatigue speed was suggested to be closely related to the generation rate of oxygen vacancies. It was confirmed by our result that a faster decay of remnant polarization can be obtained by applying square waves with a higher degree of asymmetry or symmetry of square waves with a lower frequency.
A New Paradigm for NDE (Non Destructive Evaluation)
2013-12-06
determining specific physical properties of the armor which are correlated with armor structural health. A pair of Lead Zirconate Titanate ( PZT ...this is commonly called the “pitch and catch” method. The armor plate vibrates when it is excited by a mechanical vibration from the PZT actuator...transducer, and this vibration is transmitted through the plate and induces an electrical signal in the PZT receiver transducer by virtue of the
Hot-Spot Fatigue and Impact Damage Detection on a Helicopter Tailboom
2011-09-01
other 14 PZT disks were used as sensors. Among the 28 PZT disks, 16 PZT disks were placed in the two fatigue hot-spot areas to detect cracks initiated...more efficient and effective airframe maintenance, fatigue cracking and impact damage detection technologies were developed and demonstrated on a...SHM system in successfully monitoring fatigue cracks initiated from cyclical loading conditions; detecting, locating and quantifying ballistic
NASA Astrophysics Data System (ADS)
DeAngelis, D. A.; Schulze, G. W.
The recent advancements in the manufacturing of single crystal PIN-PMN-PT piezoelectric materials now make them a cost-competitive alternative to PZT4 and PZT8 (Navy Types I and III) piezoceramic materials, which have been the workhorse of power ultrasonic applications (e.g., welding, cutting, sonar, etc.) for over 50 years. Although there are great benefits to the use of single crystal materials with respect to high output, as well as added actuating and sensing abilities, many transducer designers are still reluctant to explore these materials due to inadequate design guidelines for substituting the familiar PZT materials; for example, what are the implications of the higher capacitance, sensitivity to chipping/cracks, aging effects, frequency shifts, or how much preload can be used are all common questions. This research is a case study on the performance of identical ultrasonic transducer bodies, used for semiconductor wire bonding, assembled with either PZT8 or PIN-PMN-PT piezo material. The main purpose of the study is to establish rule-of-thumb design guidelines for direct substitution of single crystal materials in existing PZT8 transducer designs, along with a side-by-side performance comparison to highlight benefits. Several metrics are investigated such as impedance, frequency, displacement gain, quality factor and electromechanical coupling factor.
NASA Astrophysics Data System (ADS)
Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming
2016-04-01
In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.
NASA Astrophysics Data System (ADS)
Saleem Mirza, Muhammad; Yasin, Tariq; Ikram, Masroor; Altaf, Muhammad; Mushtaq, Zahir; Nasir Khan, Muhammad
2016-03-01
Underwater characterizations of (Pb0.94Sr0.04)(Zr0.52Ti0.48)O3 (PZT) and PZT/araldite-F 1-3 composite were carried out through a self-designed transducer. Disc-shaped samples of bulk PZT and PZT/araldite-F composite were first characterized in air and then were assembled in the transducer individually. The transducer's underwater voltage receiving sensitivity (Sh) and transmitting voltage response (Sv) were investigated in the frequency range of 10-200 kHz (well below thickness mode resonance) using a calibrated projector and receiver method with pulse technique. Results revealed that the transducer made with composite sample exhibited better (Sh) values (-214 dB ref 1 V/µPa) due to ~295% higher piezoelectric voltage coefficient gh (30 × 10-3 Vm/N) of the composite compared to PZT. In addition, the transducer with the PZT sample showed better Sv values (80 dB ref 1 µPa/1 V at 1 m) due to the presence of planar mode peaks in the frequency range of 10-200 kHz. These results indicate that the monolithic piezoceramic can exhibit underwater Sv response in both planar and thickness resonance modes owing to the admittance peaks in these frequency regions.
Han, Jin Kyu; Choi, Yong Chan; Jeon, Do Hyen; Lee, Min Ku; Bu, Sang Don
2014-11-01
We report the phase evolution of Pb(Zr0.52Ti0.48)O3 nanotubes (PZT-NTs), from the pyrochlore to perovskite phase, with an outer diameter of about 420 nm and a wall thickness of about 10 nm. The PZT-NTs were fabricated in pores of porous anodic alumina membrane (PAM) using a spin coating of PZT sol-gel solution and subsequent annealing at 500-700 degrees C in oxygen gas. The pyrochlore phase was found to be formed at 500 degrees C, and also found not to be transformed into the perovskite phase, even though annealing was performed at higher temperatures to 700 degrees C. Elementary distribution analysis of PZT-NTs embedded in PAM reveal that Pb diffusion from nanotubes into pore walls of PAM is one of the main reasons. By employing firstly an additional PbO coating on the pyrochlore nanotubes and then subsequent annealing at 700 degrees C, we have successfully achieved an almost pure perovskite phase in nanotubes. These results suggest that PbO acts as a Pb-compensation agent in the Pb- deficient PZT-NTs. Moreover, our method can be used in the synthesis of all metal-oxide materials, including volatile elements.
Application of Multiplexed FBG and PZT Impedance Sensors for Health Monitoring of Rocks
Yang, Yaowen; Annamdas, Venu Gopal Madhav; Wang, Chao; Zhou, Yingxin
2008-01-01
Reliable structural health monitoring (SHM) including nondestructive evaluation (NDE) is essential for safe operation of infrastructure systems. Effective monitoring of the rock components of civil infrastructures such as tunnels and caverns remains challenging. The feasibility of employing smart optical fibre sensor (OFS) and piezoelectric impedance sensor made up of lead zirconate titanate (PZT) for comprehensive health monitoring of rocks, covering load history monitoring/retrieval as well as damage assessment is presented in this paper. The rock specimens are subjected to cyclic loading and their conditions are continuously monitored using OFS and PZT sensors. OFS based multiplexed fibre Bragg grating (FBG) sensors are surface bonded on the rock specimens. Their strain sensing performance is compared with the conventional electric strain gauges (ESGs). In addition, PZT patches are also bonded on the specimens to study the damage pattern during different loading cycles. Unlike the FBGs or ESGs, PZT patches are used as bi-functional sensors and actuators, enabling them to be efficient detectors of incipient damages using the principle of electromechanical impedance. The experimental study demonstrated superior performance of these smart FBG and PZT impedance sensors. This work is expected to be useful for SHM based NDE application of rock structures such as caverns and tunnels. PMID:27879708
Graphene - ferroelectric and MoS2 - ferroelectric heterostructures for memory applications
NASA Astrophysics Data System (ADS)
Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei; Sinitskii, Alexander
In recent years there has been an unprecedented interest in two-dimensional (2D) materials with unique physical and chemical properties that cannot be found in their three-dimensional (3D) counterparts. One of the important advantages of 2D materials is that they can be easily integrated with other 2D materials and functional films, resulting in multilayered structures with new properties. We fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on a single-layer graphene combined with lead zirconium titanate (PZT) substrate. Previously studied graphene-PZT devices exhibited an unusual electronic behavior such as clockwise hysteresis of electronic transport, in contradiction with counterclockwise polarization dependence of PZT. We investigated how the interplay of polarization and interfacial phenomena affects the electronic behavior and memory characteristics of graphene-PZT FETs, explain the origin of unusual clockwise hysteresis and experimentally demonstrate a reversed polarization-dependent hysteresis of electronic transport. In addition we fabricated and tested properties of MoS2-PZT FETs which exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that MoS2-PZT memories have a number of advantages over commercial FeRAMs, such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically.
Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing
2018-01-10
Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.
Quantitative comparison of PZT and CMUT probes for photoacoustic imaging: Experimental validation.
Vallet, Maëva; Varray, François; Boutet, Jérôme; Dinten, Jean-Marc; Caliano, Giosuè; Savoia, Alessandro Stuart; Vray, Didier
2017-12-01
Photoacoustic (PA) signals are short ultrasound (US) pulses typically characterized by a single-cycle shape, often referred to as N-shape. The spectral content of such wideband signals ranges from a few hundred kilohertz to several tens of megahertz. Typical reception frequency responses of classical piezoelectric US imaging transducers, based on PZT technology, are not sufficiently broadband to fully preserve the entire information contained in PA signals, which are then filtered, thus limiting PA imaging performance. Capacitive micromachined ultrasonic transducers (CMUT) are rapidly emerging as a valid alternative to conventional PZT transducers in several medical ultrasound imaging applications. As compared to PZT transducers, CMUTs exhibit both higher sensitivity and significantly broader frequency response in reception, making their use attractive in PA imaging applications. This paper explores the advantages of the CMUT larger bandwidth in PA imaging by carrying out an experimental comparative study using various CMUT and PZT probes from different research laboratories and manufacturers. PA acquisitions are performed on a suture wire and on several home-made bimodal phantoms with both PZT and CMUT probes. Three criteria, based on the evaluation of pure receive impulse response, signal-to-noise ratio (SNR) and contrast-to-noise ratio (CNR) respectively, have been used for a quantitative comparison of imaging results. The measured fractional bandwidths of the CMUT arrays are larger compared to PZT probes. Moreover, both SNR and CNR are enhanced by at least 6 dB with CMUT technology. This work highlights the potential of CMUT technology for PA imaging through qualitative and quantitative parameters.
NASA Astrophysics Data System (ADS)
Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.
2002-12-01
This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.
NASA Astrophysics Data System (ADS)
2010-07-01
Oxide materials exhibit a large variety of functional properties that are useful in a plethora of applications. Symposium G focused on oxide thin films that include dielectric or switching properties. Its program mirrored very well the strong worldwide search for high-K thin films for gate, memory, and on-chip capacitors, as well as the emerging field of functional thin films for MEMS. A complete session was devoted to the colossal effect of dielectric response in (Ca,Cu)TiO3, representing the major European research groups in this field. A comprehensive overview on this phenomenon was given by D Sinclair J Wolfman presented the latest results on CCTO thin films obtained by wafer scale pulsed laser deposition. A Loidl showed the analytical power of dielectric spectroscopy when covering the complete frequency range from 1-1012 Hz, i.e. from space charge to phonon contributions at the example of CCTO. Another session was devoted to applications in non-volatile memories, covering various effects including ferroelectric and resistive switching, the complex behavior of oxide tunnel junctions (H Kohlstedt), the possibility to manipulate the magnetic state of a 2d-electron gas by the polarization of an adjacent ferroelectric gate (I Stolitchnov). Latest advancements in ALD processing for high-K thin films in dynamic RAM were reported by S Ramanathan. The advancement of piezoelectric PZT thin film MEMS devices was well documented by outstanding talks on their developments in industry (M Klee, F Tyholdt), new possibilities in GHz filters (T Matshushima), advancements in sol-gel processing (B Tuttle, H Suzuki), and low temperature integration approaches by UV light curing (S Trolier-McKinstry). Recent advances in incipient ferroelectric thin films and nano composites for tunable capacitors in microwave applications were present by A Vorobiev and T Yamada. Integrated electro-optics is another field to be conquered by thin film structures. The impressive progress made in this field was highlighted by P Günter. Many contributions were devoted to processing techniques, showing the increasing importance of CVD techniques to deposit for instance perovskite thin films (G Malandrino). Nevertheless, stunning results were obtained by a sophisticated MBE tool allowing for precise compositional control of individual oxide monolayers and thus enabling High-Tc supraconductivity in individual monolayers to be addressed (I Bosovic). Oxides do not only gleam with giant dielectric properties, giant electronic conduction (superconductivity), there is also a giant electro-caloric effect, as explained by Z Kutnjak. The symposium could take advantage of the EU projects NUOTO and CAMELIA that organized a joint session on giant K dielectrics to present their project results to the scientific and industrial community. The symposium organizers Paul Muralt, EPFL, Lausanne, Switzerland Marija Kosec, Josef Stefan Institute, Ljubljana, Slovenia Vito Raineri, IMM-CNR, Catania, Italy Sebastiano Ravesi, STMicroelectronics, Catania, Italy Scientific Committee Robert Blinc (Josef Stefan Inst., Slovenia) Wolfgang Kleemann (Univ. Duisburg, Germany) Raffaella Lo Nigro (IMM-CNR, Italy) Ian M Reaney (Univ. Sheffield, Great Britain) T Metzger (EPCOS, Germany) Rainer Waser (TH Aachen, Germany)
Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT
DOE Office of Scientific and Technical Information (OSTI.GOV)
Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com
2016-05-23
In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of dopedmore » PZT.« less
NASA Astrophysics Data System (ADS)
Li, Yong-Chao; Wu, Jun; Pan, Hai-Yang; Wang, Jue; Wang, Guang-Hou; Liu, Jun-Ming; Wan, Jian-Guo
2018-05-01
Mn:ZnO/Pb(Zr0.52Ti0.48)O3 (PZT) heterostructured films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. Nonvolatile and reversible manipulation of the magnetism and resistance by electric fields has been realized. Compared with the saturation magnetic moment (Ms) in the +3.0 V case, the modulation gain of Ms can reach 270% in the -3.0 V case at room temperature. The resistance change is attributed to the interfacial potential barrier height variation and the formation of an accumulation (or depletion) layer at the Mn:ZnO/PZT interface, which can be regulated by the ferroelectric polarization direction. The magnetism of Mn:ZnO originates from bound magnetic polarons. The mobile carrier variation in Mn:ZnO, owing to interfacial polarization coupling and the ferroelectric field effect, enables the electric manipulation of the magnetism in the Mn:ZnO/PZT heterostructured films. This work presents an effective method for modulating the magnetism of magnetic semiconductors and provides a promising avenue for multifunctional devices with both electric and magnetic functionalities.
Efficient synthesis of ammonia from N2 and H2 alone in a ferroelectric packed-bed DBD reactor
NASA Astrophysics Data System (ADS)
Gómez-Ramírez, A.; Cotrino, J.; Lambert, R. M.; González-Elipe, A. R.
2015-12-01
A detailed study of ammonia synthesis from hydrogen and nitrogen in a planar dielectric barrier discharge (DBD) reactor was carried out. Electrical parameters were systematically varied, including applied voltage and frequency, electrode gap, and type of ferroelectric material (BaTiO3 versus PZT). For selected operating conditions, power consumption and plasma electron density were estimated from Lissajous diagrams and by application of the Bolsig + model, respectively. Optical emission spectroscopy was used to follow the evolution of plasma species (\\text{N}{{\\text{H}}*},{{\\text{N}}*},~{N}2+~\\text{and} ~{N}2* ) as a function of applied voltage with both types of ferroelectric material. PZT gave both greater energy efficiency and higher ammonia yield than BaTiO3: 0.9 g NH3 kWh-1 and 2.7% single pass N2 conversion, respectively. This performance is substantially superior to previously published findings on DBD synthesis of NH3 from N2 and H2 alone. The influence of electrical working parameters, the beneficial effect of PZT and the importance of controlling reactant residence time are rationalized in a reaction model that takes account of the principal process variables
Effect of Nd Doping on Dielectric and Impedance Properties of PZT Nanoceramics
NASA Astrophysics Data System (ADS)
Kour, P.; Pradhan, S. K.; Kumar, Pawan; Sinha, S. K.; Kar, Manoranjan
2018-02-01
Neodymium-doped lead zirconate tianate, i.e. Pb1-x Nd x Zr0.52Ti0.48O3 (PNZT) ceramics, with x = 0-10 mol.% has been prepared by the sol-gel process. X-ray diffraction pattern at room temperature shows the pyrochlore free phase for all samples. The structural analysis suggests the coexistence of both rhombohedral (R3m space group) and tetragonal (P4 mm space group) crystal symmetries. Scanning electron micrographs of the samples show uniform distribution of grain and grain boundaries. Dielectric constant increases with the increase in neodymium concentration in the crystal lattice. Degree of diffuse phase transition increases with the increase in Nd3+ concentration in the sample. Nd3+ incorporation into the lead zirconatetitanate (PZT) lattice enhances the spreading factor. Interaction between neighbouring dipoles decreases with the increase of Nd3+ in PZT lattice. The conduction mechanism of the sample can be attributed to the overlapping large polar tunnelling. Second-order dielectric phase transition has been observed at the Curie temperature. The electrical properties of the sample can be explained by considering grain and grain boundaries contributions. All the samples show the poly-dispersive non-Debye type relaxation.
NASA Astrophysics Data System (ADS)
Tsaur, Jiunnjye; Zhang, Lulu; Maeda, Ryutaro; Matsumoto, Sohei; Khumpuang, Sommawan
2002-06-01
Micro scanners including 1D scanner beams and 2D scanning micromirrors are designed and fabricated. In order to yield large bending force, the sol-gel derived double layered lead zirconate titanate (PZT) structures are developed to be the actuator components. In our developed fabrication process, the use of thermal treatment and the addition of one platinium/titanium film played an important role to yield the well-crystallized perovskite phase and decrease the residual strss of total cantilever structures successfully. In the case of 1D scanner beams with the size of 750× 230 μm2, the optical scanning angle was 41.2 deg with respect to actuation with AC 5 V at 2706 Hz. Under the applied bias of 10 V, the bimorph beam bended upward and the deflection angle of 34.3 deg was measured. A 2D scanning micromirror supported by four suspended double layered PZT actuators was designed to rotate around two orthogonal axes by the operation at different resonant frequencies. While resonating with AC 7.5 V at 3750 Hz and 5350 Hz, the maximum scanning area of 24\\circ× 26\\circ was obtained.
Nonlinearity and Scaling Behavior in Lead Zirconate Titanate Piezoceramic
NASA Astrophysics Data System (ADS)
Mueller, V.
1998-03-01
The results of a comprehensive study of the nonlinear dielectric and electromechanical response of lead zirconate titanate (PZT) piezoceramics are presented. The piezoelectric strain of a series of donor doped (soft PZT) and acceptor doped (hard PZT) polycrystalline systems was measured under quasistatic (nonresonant) conditions. The measuring field was applied both parallel and perpendicular to the poling direction of the ceramic in order to investigate the influence of different symmetry conditions. Dielectric properties were studied in addition to the electromechanical measurements which enables us to compare piezoelectric and dielectric nonlinearities. Due to the different level and type of dopants, the piezoceramics examined differ significantly with regard to its Curie temperature (190^o C
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yan, Fuxue, E-mail: yanfuxue@126.com; Han, Kai, E-
2017-02-15
C-axis oriented La{sub 0.67}Sr{sub 0.33}MnO{sub 3}(LSMO)/PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}(PZT) films are fabricated successfully by sol-gel method on LaAlO{sub 3} (00l) substrates. The structure, composition and morphology of the films are investigated by X-ray diffractometer (XRD, θ-2θ scan, ω-scan and ϕ-scan), X-ray photoelectron spectroscope (XPS), field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM). The electric and magnetic properties of randomly and c-axis oriented LSMO/PZT films are studied comparably using ferroelectric testing apparatus and physical property measurement system (PPMS). It is found that the epitaxial LSMO/PZT composite films show well controlled growth along c-axis, and much bettermore » magnetoelectric properties than the randomly oriented ones. The ME voltage coefficient increases from 23 mV cm{sup −1} Oe{sup −1} for the randomly oriented LSMO/PZT composite films to 52 mV cm{sup −1} Oe{sup −1} for c-axis oriented ones prepared using the low cost sol-gel method presented in this study, which shows high potential in promising applications. - Highlights: •Epitaxial LSMO/PZT films were fabricated successfully by sol-gel method on LAO (00l) substrate. •The prepared films exhibit well-defined multiferroic properties for the epitaxial LSMO/PZT films. •Epitaxial LSMO/PZT films show superior magnetoelectric properties to the randomly oriented ones.« less
NASA Astrophysics Data System (ADS)
Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi
2017-10-01
In-plane orientation-controlled Pb(Zr x ,Ti1- x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39-0.65 were grown on (100) Si substrates by pulsed metal-organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0-100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.
NASA Astrophysics Data System (ADS)
Safaei, Mohsen; Anton, Steven R.
2016-04-01
Total Knee Replacement (TKR), one of the most common surgeries in the United States, is performed when the patient is experiencing significant amounts of pain or when knee functionality has become substantially degraded. Despite impressive recent developments, only about 85% of patients are satisfied with the pain reduction after one year. Therefore, structural health and performance monitoring are integral for intraoperative and postoperative feedback. In extension of the author's previous work, a new configuration for implementation of piezoelectric transducers in total knee replacement bearings is proposed and FEA modeling is performed to attain appropriate sensing and energy harvesting ability. The predicted force transmission ratio to the PZT (ratio of force applied to the bearing to force transferred to the embedded piezoelectric transducer) is about 6.2% compared to about 5% found for the previous encapsulated design. Dimensional parameters of the polyethylene bearing including the diameter and depth of the PZT pocket as well as the placement geometry of the PZT transducer within the bearing are hypothesized as the most influential parameters on the performance of the designed system. The results show a small change of 1% and 2.3% in the output of the system as a result of variation in the PZT location and pocket diameter, respectively. Whereas, the output of the system is significantly sensitive to the pocket depth; a pocket 0.01 mm deeper than the PZT transducer leads to no force transmission, and a pocket 0.15 mm shallower leads to full load transmission to the PZT. In order to develop a self-powered sensor, the amount of energy harvested from tibial forces for the proposed geometry is investigated.
2014-04-01
piezoelectric material is reported to potentially produce gains up to a factor of 8 over commercially available, high-performance PZT materials...Narrow-band signal (70-200 cycles) Concentrates energy in desired propagation mode and improves response of PZT transducer. High output/sensitivity PZT ...of Mechanical Engineering, Imperial College. Christoph, P., Q-Y Kim, J. Qu, and L. J. Jacobs. 2009. Evaluation of fatigue damage using non-linear
A Multi-Scale Framework for Multi-Field Analyses of Smart Composites
2015-01-15
purchased from Advanced Cerametrics Incorporated, consist of PZT 5A fibers dispersed in an epoxy matrix. Kapton layers and electrode fingers are placed...tests in the longitudinal fiber direction, at different rates and temperatures: 25oC, 50oC, and 75oC. Figure 2 shows examples of PZT Positive... PZT and active fiber composites at various frequencies at temperatures 25oC and 75oC. Figure 4 Hysteretic polarization at room temperature with
Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming
2016-12-01
In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.
NASA Astrophysics Data System (ADS)
Amonpattaratkit, P.; Jantaratana, P.; Ananta, S.
2015-09-01
In this work, the investigation of phase formation, crystal structure, microstructure, microchemical composition and magnetic properties of perovskite (1-x)PFN-xPZT (x=0.1-0.5) multiferroic ceramics derived from a combination of perovskite stabilizer PZT and a wolframite-type FeNbO4 B-site precursor was carried out by using a combination of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) analyzer and vibrating sample magnetometer (VSM) techniques. The addition of PZT phase and its concentration have been found to have pronounced effects on the perovskite phase formation, densification, grain growth and magnetic properties of the sintered ceramics. XRD spectra from these ceramics reveal transformation of the (pseudo) cubic into the tetragonal perovskite structure. When increasing PZT content, the degree of perovskite phase formation and the tetragonality value of the ceramics increase gradually accompanied with the variation of cell volume, the M-H hysteresis loops, however, become narrower accompanied by the decrease of maximum magnetization (Mmax), remanent polarization (Mr), and coercive field (HC).
NASA Astrophysics Data System (ADS)
Li, Jianqiang; Lu, Caijiang; Xu, Changbao; Zhong, Ming
2015-09-01
This paper develops a simple miniature magnetoelectric (ME) laminate FeCuNbSiB/PZT-stack made up of magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils and piezoelectric Pb(Zr, Ti)O3 (PZT) multilayer stack vibrator. Resonant ME interactions of FeCuNbSiB/PZT-stack with different layers of FeCuNbSiB foil (L) are investigated in detail. The experimental results show that the ME voltage coefficient reaches maximum value of 141.5 (V/cm Oe) for FeCuNbSiB/PZT-stack with L = 6. The AC-magnetic sensitivities can reach 524.29 mV/Oe and 1.8 mV/Oe under resonance 91.6 kHz and off-resonance 1 kHz, respectively. The FeCuNbSiB/PZT-stack can distinguish small dc-magnetic field of ˜9 nT. The results indicate that the proposed ME composites are very promising for the cheap room-temperature magnetic field sensing technology.
NASA Astrophysics Data System (ADS)
Wang, Hong; Lee, Sung-Min; Wang, James L.; Lin, Hua-Tay
2014-12-01
Testing of large prototype lead zirconate titanate (PZT) stacks presents substantial technical challenges to electronic testing systems, so an alternative approach that uses subunits extracted from prototypes has been pursued. Extracted 10-layer and 20-layer plate specimens were subjected to an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 108 cycles. The effects of measurement field level and stack size (number of PZT layers) on the fatigue responses of piezoelectric and dielectric coefficients were observed. On-line monitoring permitted examination of the fatigue response of the PZT stacks. The fatigue rate (based on on-line monitoring) and the fatigue index (based on the conductance spectrum from impedance measurement or small signal measurement) were developed to quantify the fatigue status of the PZT stacks. The controlling fatigue mechanism was analyzed against the fatigue observations. The data presented can serve as input to design optimization of PZT stacks and to operation optimization in critical applications, such as piezoelectric fuel injectors in heavy-duty diesel engines.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Hong; Lee, Sung Min; Wang, James L.
Testing of large prototype lead zirconate titanate (PZT) stacks presents substantial technical challenges to electronic testing systems, so an alternative approach that uses subunits extracted from prototypes has been pursued. Extracted 10-layer and 20-layer plate specimens were subjected to an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 10^8 cycles. The effects of measurement field level and stack size (number of PZT layers) on the fatigue responses of piezoelectric and dielectric coefficients were observed. On-line monitoring permitted examination of the fatigue response of the PZT stacks. The fatigue rate (based on on-line monitoring) and themore » fatigue index (based on the conductance spectrum from impedance measurement or small signal measurement) were developed to quantify the fatigue status of the PZT stacks. The controlling fatigue mechanism was analyzed against the fatigue observations. The data presented can serve as input to design optimization of PZT stacks and to operation optimization in critical applications such as piezoelectric fuel injectors in heavy-duty diesel engines.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Hong, E-mail: wangh@ornl.gov; Lee, Sung-Min; Wang, James L.
Testing of large prototype lead zirconate titanate (PZT) stacks presents substantial technical challenges to electronic testing systems, so an alternative approach that uses subunits extracted from prototypes has been pursued. Extracted 10-layer and 20-layer plate specimens were subjected to an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 10{sup 8} cycles. The effects of measurement field level and stack size (number of PZT layers) on the fatigue responses of piezoelectric and dielectric coefficients were observed. On-line monitoring permitted examination of the fatigue response of the PZT stacks. The fatigue rate (based on on-line monitoring) and the fatiguemore » index (based on the conductance spectrum from impedance measurement or small signal measurement) were developed to quantify the fatigue status of the PZT stacks. The controlling fatigue mechanism was analyzed against the fatigue observations. The data presented can serve as input to design optimization of PZT stacks and to operation optimization in critical applications, such as piezoelectric fuel injectors in heavy-duty diesel engines.« less
Mechanically activated synthesis of PZT and its electromechanical properties
NASA Astrophysics Data System (ADS)
Liu, X.; Akdogan, E. K.; Safari, A.; Riman, R. E.
2005-08-01
Mechanical activation was successfully used to synthesize nanostructured phase-pure Pb(Zr0.7Ti0.3)O3 (PZT) powders. Lead zirconium titanium (PbZrTi) hydrous oxide precursor, synthesized from chemical co-precipitation, was mechanically activated in a NaCl matrix. The synthesized PZT particles were characterized by using X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, laser-light diffraction, and nitrogen adsorption. Thermogravimetric analysis and differential thermal analysis were used to monitor dehydration and phase transformation of PbZrTi hydrous oxide precursor during mechanical activation. The best mechanical activation conditions corresponded to mechanically activating PbZrTi hydrous oxide precursor in a NaCl matrix with a NaCl/precursor weight ratio of 4:1 for 8 h. These conditions resulted in a dispersible phase-pure PZT powder with a median secondary-particle size of ˜110 nm. The properties of PZT 70/30 from mechanically activated powder, as measured on discs sintered at 1150 °C for 2 h, were found to be in close conformity to those obtained by a conventional mixed oxide solid state reaction route.
Wang, Hong; Lee, Sung Min; Wang, James L.; ...
2014-12-19
Testing of large prototype lead zirconate titanate (PZT) stacks presents substantial technical challenges to electronic testing systems, so an alternative approach that uses subunits extracted from prototypes has been pursued. Extracted 10-layer and 20-layer plate specimens were subjected to an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 10^8 cycles. The effects of measurement field level and stack size (number of PZT layers) on the fatigue responses of piezoelectric and dielectric coefficients were observed. On-line monitoring permitted examination of the fatigue response of the PZT stacks. The fatigue rate (based on on-line monitoring) and themore » fatigue index (based on the conductance spectrum from impedance measurement or small signal measurement) were developed to quantify the fatigue status of the PZT stacks. The controlling fatigue mechanism was analyzed against the fatigue observations. The data presented can serve as input to design optimization of PZT stacks and to operation optimization in critical applications such as piezoelectric fuel injectors in heavy-duty diesel engines.« less
Processing of Fine-Scale Piezoelectric Ceramic/Polymer Composites for Sensors and Actuators
NASA Technical Reports Server (NTRS)
Janas, V. F.; Safari, A.
1996-01-01
The objective of the research effort at Rutgers is the development of lead zirconate titanate (PZT) ceramic/polymer composites with different designs for transducer applications including hydrophones, biomedical imaging, non-destructive testing, and air imaging. In this review, methods for processing both large area and multifunctional ceramic/polymer composites for acoustic transducers were discussed.
NASA Astrophysics Data System (ADS)
Rodriguez, Brian Joseph
Nanoscale characterization of the piezoelectric and polarization related properties of III-Nitrides by piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) resulted in the measurement of piezoelectric constants, surface charge and surface potential. Photo-electron emission microscopy (PEEM) was used to determine the local electronic band structure of a GaN-based lateral polarity heterostructure (GaN-LPH). Nanoscale characterization of the imprint and switching behavior of ferroelectric thin films by PFM resulted in the observation of domain pinning, while nanoscale characterization of the spatial variations in the imprint and switching behavior of integrated (111)-oriented PZT-based ferroelectric random access memory (FRAM) capacitors by PFM have revealed a significant difference in imprint and switching behavior between the inner and outer parts of capacitors. The inner regions of the capacitors are typically negatively imprinted and consequently tend to switch back after being poled by a positive bias, while regions at the edge of the capacitors tend to exhibit more symmetric hysteresis behavior. Evidence was obtained indicating that mechanical stress conditions in the central regions of the capacitors can lead to incomplete switching. A combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM, respectively) has been used to map the out-of-plane and in-plane polarization distribution, respectively, of integrated (111)-oriented PZT-based capacitors, which revealed poled capacitors are in a polydomain state.
Direct Intracochlear Acoustic Stimulation Using a PZT Microactuator.
Luo, Chuan; Omelchenko, Irina; Manson, Robert; Robbins, Carol; Oesterle, Elizabeth C; Cao, Guo Zhong; Shen, I Y; Hume, Clifford R
2015-12-01
Combined electric and acoustic stimulation has proven to be an effective strategy to improve hearing in some cochlear implant users. We describe an acoustic microactuator to directly deliver stimuli to the perilymph in the scala tympani. The 800 µm by 800 µm actuator has a silicon diaphragm driven by a piezoelectric thin film (e.g., lead-zirconium-titanium oxide or PZT). This device could also be used as a component of a bimodal acoustic-electric electrode array. In the current study, we established a guinea pig model to test the actuator for its ability to deliver auditory signals to the cochlea in vivo. The actuator was placed through the round window of the cochlea. Auditory brainstem response (ABR) thresholds, peak latencies, and amplitude growth were calculated for an ear canal speaker versus the intracochlear actuator for tone burst stimuli at 4, 8, 16, and 24 kHz. An ABR was obtained after removal of the probe to assess loss of hearing related to the procedure. In some animals, the temporal bone was harvested for histologic analysis of cochlear damage. We show that the device is capable of stimulating ABRs in vivo with latencies and growth functions comparable to stimulation in the ear canal. Further experiments will be necessary to evaluate the efficiency and safety of this modality in long-term auditory stimulation and its ability to be integrated with conventional cochlear implant arrays. © The Author(s) 2015.
Temperature field analysis for PZT pyroelectric cells for thermal energy harvesting.
Hsiao, Chun-Ching; Ciou, Jing-Chih; Siao, An-Shen; Lee, Chi-Yuan
2011-01-01
This paper proposes the idea of etching PZT to improve the temperature variation rate of a thicker PZT sheet in order to enhance the energy conversion efficiency when used as pyroelectric cells. A partially covered electrode was proven to display a higher output response than a fully covered electrode did. A mesh top electrode monitored the temperature variation rate and the electrode area. The mesh electrode width affected the distribution of the temperature variation rate in a thinner pyroelectric material. However, a pyroelectric cell with a thicker pyroelectric material was beneficial in generating electricity pyroelectrically. The PZT sheet was further etched to produce deeper cavities and a smaller electrode width to induce lateral temperature gradients on the sidewalls of cavities under homogeneous heat irradiation, enhancing the temperature variation rate.
A flexible ultrasound transducer array with micro-machined bulk PZT.
Wang, Zhe; Xue, Qing-Tang; Chen, Yuan-Quan; Shu, Yi; Tian, He; Yang, Yi; Xie, Dan; Luo, Jian-Wen; Ren, Tian-Ling
2015-01-23
This paper proposes a novel flexible piezoelectric micro-machined ultrasound transducer, which is based on PZT and a polyimide substrate. The transducer is made on the polyimide substrate and packaged with medical polydimethylsiloxane. Instead of etching the PZT ceramic, this paper proposes a method of putting diced PZT blocks into holes on the polyimide which are pre-etched. The device works in d31 mode and the electromechanical coupling factor is 22.25%. Its flexibility, good conformal contacting with skin surfaces and proper resonant frequency make the device suitable for heart imaging. The flexible packaging ultrasound transducer also has a good waterproof performance after hundreds of ultrasonic electric tests in water. It is a promising ultrasound transducer and will be an effective supplementary ultrasound imaging method in the practical applications.
Temperature Field Analysis for PZT Pyroelectric Cells for Thermal Energy Harvesting
Hsiao, Chun-Ching; Ciou, Jing-Chih; Siao, An-Shen; Lee, Chi-Yuan
2011-01-01
This paper proposes the idea of etching PZT to improve the temperature variation rate of a thicker PZT sheet in order to enhance the energy conversion efficiency when used as pyroelectric cells. A partially covered electrode was proven to display a higher output response than a fully covered electrode did. A mesh top electrode monitored the temperature variation rate and the electrode area. The mesh electrode width affected the distribution of the temperature variation rate in a thinner pyroelectric material. However, a pyroelectric cell with a thicker pyroelectric material was beneficial in generating electricity pyroelectrically. The PZT sheet was further etched to produce deeper cavities and a smaller electrode width to induce lateral temperature gradients on the sidewalls of cavities under homogeneous heat irradiation, enhancing the temperature variation rate. PMID:22346652
Laser frequency modulator for modulating a laser cavity
Erbert, Gaylen V.
1992-01-01
The present invention relates to a laser frequency modulator for modulating a laser cavity. It is known in the prior art to utilize a PZT (piezoelectric transducer) element in combination with a mirror to change the cavity length of a laser cavity (which changes the laser frequency). Using a PZT element to drive the mirror directly is adequate at frequencies below 10 kHz. However, in high frequency applications (100 kHz and higher) PZT elements alone do not provide a sufficient change in the cavity length. The present invention utilizes an ultrasonic concentrator with a PZT element and mirror to provide modulation of the laser cavity. With an ultrasonic concentrator, the mirror element at the end of a laser cavity can move at larger amplitudes and higher frequencies.
NASA Astrophysics Data System (ADS)
Bush, A. A.; Shkuratov, V. Ya.; Chernykh, I. A.; Fetisov, Y. K.
2010-03-01
Layered thick-film composites containing one lead zirconate titanate (PZT) layer, one nickel zinc ferrite (NZF) layer, two PZT-NZF layers, or three PZT-NZF-PZT layers each 40-50 μm thick are prepared. The layers are applied by screen printing on a ceramic aluminum oxide substrate with a preformed contact (conducting) layer. The dielectric properties of the composites are studied in the temperature interval 80-900 K and the frequency interval 25 Hz-1 MHz. Polarized samples exhibit piezoelectric, pyroelectric, and magnetoelectric effects. In tangentially magnetized two- and three-layer composites, the magnetoelectric conversion factor equals 57 kV/(m T) at low frequencies and reaches 2000 kV/(m T) at the mechanical resonance frequency.
Polarization reversal due to charge injection in ferroelectric films
NASA Astrophysics Data System (ADS)
Bühlmann, S.; Colla, E.; Muralt, P.
2005-12-01
The origin of a recently reported peculiar phenomenon—polarization reversal against the applied electric field in ferroelectric thin films [M. Aplanalp and P. Günter, Ferroelectrics 258, 3 (2001), T. Morita and Y. Cho, Appl. Phys. Lett. 84, 257 (2004)]—has been identified. The phenomenon is observed when poling a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM). The effect seems to be of quite general nature as it has been observed on BaTiO3 [Aplanalp , Phys. Rev. Lett. 86, 5799 (2001)] as well as on LiTaO3 films [I. Morita and Y. Cho Appl. Phys. Lett. 84, 257 (2004)]. It was proposed that this switching is provoked by mechanical stress due to the Maxwell force between tip and bottom electrode [Aplanalp , Phys. Rev. Lett. 86, 5799 (2001)]. We have studied the same phenomenon in PbZr0.4Ti0.6O3 (PZT) thin films, deposited as epitaxial film on conductive, Nb-doped SrTiO3 single crystals. New experimental evidence strongly supports a different explanation. The poling process is accompanied by considerable charge injection leading to important space charges inside the ferroelectric film. These charges finally can lead, for given conditions, to a polarization reversal when the applied voltage to the conductive AFM tip is set to zero. Two analytical models are proposed to explain field inversion in the upper part of the film.
Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films
NASA Astrophysics Data System (ADS)
Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.
2018-03-01
Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.
2011-04-01
sputtered PZT films on both sapphire and Si substrates were textured along the [110] direction. The degree of preference for the [110] direction was... PZT . Since these films are approximately 0.5 μm thick and breakdown occurs at relatively high fields, surface-related ( ceramic metal contact band... ceramics created donor sites, which are n-type. From the crystallographic data, it is seen that the degree of crystallinity and PZT crystal quality
Enhanced Dielectric Nonlinearity in Epitaxial Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3)
2014-04-23
storage capacitors, electro-mechanical, or photo- mechanical transducers, etc.1–3 Among them, Lead zirconate titanate system ( PZT ), which exhibits...and at the interfaces between PZT and electro- des. Recently, lanthanum doped PZT with different Zr/Ti ra- tio, such as 65/35, 53/47, or 20/80, has...been investigated, since it can effectively reduce oxygen vacancy, decrease leakage current, and lower the fatigue and domain pinning.8–10 In general
Damage Evaluation Based on a Wave Energy Flow Map Using Multiple PZT Sensors
Liu, Yaolu; Hu, Ning; Xu, Hong; Yuan, Weifeng; Yan, Cheng; Li, Yuan; Goda, Riu; Alamusi; Qiu, Jinhao; Ning, Huiming; Wu, Liangke
2014-01-01
A new wave energy flow (WEF) map concept was proposed in this work. Based on it, an improved technique incorporating the laser scanning method and Betti's reciprocal theorem was developed to evaluate the shape and size of damage as well as to realize visualization of wave propagation. In this technique, a simple signal processing algorithm was proposed to construct the WEF map when waves propagate through an inspection region, and multiple lead zirconate titanate (PZT) sensors were employed to improve inspection reliability. Various damages in aluminum and carbon fiber reinforced plastic laminated plates were experimentally and numerically evaluated to validate this technique. The results show that it can effectively evaluate the shape and size of damage from wave field variations around the damage in the WEF map. PMID:24463430
Development of piezoelectric composites for transducers
NASA Astrophysics Data System (ADS)
Safari, A.
1994-07-01
For the past decade and a half, many different types of piezoelectric ceramic-polymer composites have been developed intended for transducer applications. These diphasic composites are prepared from non-active polymer, such as epoxy, and piezoelectric ceramic, such as PZT, in the form of filler powders, elongated fibers, multilayer and more complex three-dimensional structures. For the last four years, most of the efforts have been given to producing large area and fine scale PZT fiber composites. In this paper, processing of piezoelectric ceramic-polymer composites with various connectivity patterns are reviewed. Development of fine scale piezoelectric composites by lost mold, injection molding and the relic method are described. Research activities of different groups for preparing large area piezocomposites for hydrophone and actuator applications are briefly reviewed. Initial development of electrostrictive ceramics and composites are also
Experimental investigation on sandwich structure ring-type ultrasonic motor.
Peng, Taijiang; Shi, Hongyan; Liang, Xiong; Luo, Feng; Wu, Xiaoyu
2015-02-01
This paper presents a manufacture method for a sandwich structure Ultrasonic Motor (USM) and experiment. Two pieces of rotor clamped on a stator, and a stainless steel disk-spring is bonded on the hollow rotor disk to provide the press by a nut assembled on the shaft. The stator is made of a double-side Printed-Circuit Board (PCB) which is sawed out the ring in the center and connected on the board with three legs. On each side of the ring surface, there are electrodes connected at the same position via through hole. The three layer drive circuit for sine, cosine, and ground signal is connected on the board through each leg. There are many piezoelectric components (PZT) bonded between two electrodes and fill soldering tin on each electrode. Then PZT is welded on PCB by reflow soldering. Finally, rub the gibbous soldering tin down to the position of PZT surface makes sure the surface contacts with rotor evenly. The welding process can also be completed by Surface Mounted Technology (SMT). A prototype motor is manufactured by this method. Two B03 model shapes of the stator are obtained by the finite element analysis and the optimal frequency of the motor is 56.375 kHz measured by impedance instrument. The theoretical analysis is conducted for the relationship between the revolving speed of the USM and thickness of stator ring, number of the travelling waves, PZT amplitude, frequency and the other parameters. The experiment result shows that the maximum revolving speed is 116 RPM and the maximum torque is 25 N mm, when the actuate voltage is 200 VAC. Copyright © 2014 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Talakokula, Visalakshi; Bhalla, Suresh; Gupta, Ashok
2018-01-01
Concrete is the most widely used material in civil engineering construction. Its life begins when the hydration process is activated after mixing the cement granulates with water. In this paper, a non-dimensional hydration parameter, obtained from piezoelectric ceramic (PZT) patches bonded to rebars embedded inside concrete, is employed to monitor the early age hydration of concrete. The non-dimensional hydration parameter is derived from the equivalent stiffness determined from the piezo-impedance transducers using the electro-mechanical impedance (EMI) technique. The focus of the study is to monitor the hydration process of cementitious materials commencing from the early hours and continue till 28 days using single non-dimensional parameter. The experimental results show that the proposed piezo-based non-dimensional hydration parameter is very effective in monitoring the early age hydration, as it has been derived from the refined structural impedance parameters, obtained by eliminating the PZT contribution, and using both the real and imaginary components of the admittance signature.
NASA Astrophysics Data System (ADS)
Zeng, Lingyu; Zhou, Minhong; Bi, Ke; Lei, Ming
2016-01-01
Magnetoelectric (ME) Ni/PZT/TbFe2 and TbFe2/PZT composites with two semiring structures are prepared. The dependence between ME coupling and magnetostrictive property of the composite is discussed. Because Ni possesses negative magnetostrictive property and TbFe2 shows positive magnetostrictive property, the ME voltage coefficient of Ni/PZT/TbFe2 semiring structure is much larger than that of TbFe2/PZT. In these composites, the ME voltage coefficient increases and the resonance frequency gradually decreases with the increase of the semiring radius, showing that structural parameters are key factors to the composite properties. Due to the strong ME coupling effect, a giant ME voltage coefficient αE = 44.8 V cm-1 Oe-1 is obtained. This approach opens a way for the design of ME composites with giant ME voltage coefficient.
Imam, M; Stojić, N; Binggeli, N
2017-08-04
Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in [Formula: see text] (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.
Compositional Effects on Electromechanical Degradation of RAINBOW Actuators
NASA Technical Reports Server (NTRS)
Dausch, David E.; Wise, Stephanie A.
1998-01-01
The effect of ceramic composition on the electromechanical displacement degradation of RAINBOW (Reduced and Internally Biased Oxide Wafer) actuators was investigated. RAINBOWs were fabricated from commercially available PZT-5H and PZT-5A piezoelectric disks as well as from tape cast PLZT piezoelectric 7/65/35 and electrostrictive 9/65/35 compositions. Displacement properties were measured at low electric fields (10 to 13 kV/cm) under loads of 0 to 500 g, and displacement degradation as a function of time was observed over 107 cycles. The PZT-5A and PLZT 9/65/35 compositions exhibited minimal decrease in displacement when load was applied. Furthermore, these compositions retained approximately 65 percent of their initial displacement after 10(exp 7) cycles under a load of 300 g. PZT-5H and PLZT 7/65/35 degraded completely under these conditions.
TECHNICAL NOTE: The development of a PZT-based microdrive for neural signal recording
NASA Astrophysics Data System (ADS)
Park, Sangkyu; Yoon, Euisung; Lee, Sukchan; Shin, Hee-sup; Park, Hyunjun; Kim, Byungkyu; Kim, Daesoo; Park, Jongoh; Park, Sukho
2008-04-01
A hand-controlled microdrive has been used to obtain neural signals from rodents such as rats and mice. However, it places severe physical stress on the rodents during its manipulation, and this stress leads to alertness in the mice and low efficiency in obtaining neural signals from the mice. To overcome this issue, we developed a novel microdrive, which allows one to adjust the electrodes by a piezoelectric device (PZT) with high precision. Its mass is light enough to install on the mouse's head. The proposed microdrive has three H-type PZT actuators and their guiding structure. The operation principle of the microdrive is based on the well known inchworm mechanism. When the three PZT actuators are synchronized, linear motion of the electrode is produced along the guiding structure. The electrodes used for the recording of the neural signals from neuron cells were fixed at one of the PZT actuators. Our proposed microdrive has an accuracy of about 400 nm and a long stroke of about 5 mm. In response to formalin-induced pain, single unit activities are robustly measured at the thalamus with electrodes whose vertical depth is adjusted by the microdrive under urethane anesthesia. In addition, the microdrive was efficient in detecting neural signals from mice that were moving freely. Thus, the present study suggests that the PZT-based microdrive could be an alternative for the efficient detection of neural signals from mice during behavioral states without any stress to the mice.
Development of PZT-excited stroboscopic shearography for full-field nondestructive evaluation.
Asemani, Hamidreza; Park, Jinwoo; Lee, Jung-Ryul; Soltani, Nasser
2017-05-01
Nondestructive evaluation using shearography requires a way to stress the inspection target. This technique is able to directly measure the displacement gradient distribution on the object surface. Shearography visualizes the internal structural damages as the anomalous pattern in the shearograpic fringe pattern. A piezoelectric (PZT) excitation system is able to generate loadings in the vibrational, acoustic, and ultrasonic regimes. In this paper, we propose a PZT-excited stroboscopic shearography. The PZT excitation could generate vibrational loading, a stationary wavefield, and a nonstationary propagation wave to fulfill the external loading requirement of shearography. The sweeping of the PZT excitation frequency, the formation of a standing wave, and a small shearing to suppress the incident wave were powerful controllable tools to detect the defects. The sweeping of the PZT excitation frequency enabled us to determine one of the defect-sensitive frequencies almost in real time. In addition, because the defect sensitive frequencies always existed in wide and plural ranges, the risk of the defect being overlooked by the inspector could be alleviated. The results of evaluation using stroboscopic shearography showed that an artificial 20 mm-diameter defect could be visualized at the excitation frequencies of 5-8 kHz range and 12.5-15.5 kHz range. This technique provided full field reliable and repeatable inspection results. Additionally, the proposed method overcame the important drawback of the time-averaged shearography, being required to identify the resonance vibration frequency sensitive to the defect.
Work of PZT ceramics sounder for sound source artificial larynx
NASA Astrophysics Data System (ADS)
Sugio, Yuuichi; Kanetake, Ryota; Tanaka, Akimitsu; Ooe, Katsutoshi
2007-04-01
We aim to develop the easy-to-use artificial larynx with high tone quality. We focus on using a PZT ceramics sounder as its sound source, because it is small size, low power consumption, and harmless to humans. But conventional PZT ceramics sounder have the problem that it cannot generate an enough sound in the low frequency range, thus they cannot be used for artificial larynx. Then, we aim to develop the PZT ceramics sounder which can generate enough volume in the low frequency range. If we can lower the resonance frequency of the sounder, it can generate low pitch sound easily. Therefore I created the new diaphragm with low resonance frequency. In addition, we could obtain the high amplitude by changing method of driving. This time, we report on the characteristic comparison of this new PZT ceramics sounder and conventional one. Furthermore, for this new one, we analyzed the best alignment of PZT ceramics and the shape of the diaphragm to obtain low resonance frequency and big amplitude. In fact we analyzed the optimization of the structure. The analysis is done by computer simulation of ANSYS and Laser Doppler Vibrometer. In the future, we will add intonation to the generated sound by input wave form which is developed concurrently, and implant the sounder inside of the body by the method of fixing metal to biomolecule which is done too. And so high tone quality and convenient artificial larynx will be completed.
NASA Astrophysics Data System (ADS)
Kim, Sung-Jin; Cho, Young-Ho; Nam, Hyo-Jin; Bu, Jong Uk
2008-12-01
This paper presents a torsional micromirror detached from PZT actuators (TMD), whose rotational motion is achieved by push bars in the PZT actuators, detached from the micromirror. The push bar mechanism is intended to reduce the bending, tensile and torsional constraints generated by the conventional bending bar mechanism, where the torsional micromirror is attached to the PZT actuators (TMA). We have designed, fabricated and tested the prototypes of TMDs for single-axis and dual-axis rotations, respectively. The single-axis TMD generates a static rotational angle of 6.1° at 16 Vdc, which is six times larger than that of the single-axis TMA, 0.9°. However, the rotational response curve of TMD shows hysteresis and zero offset due to the static friction from the initial contact force between the cover and the push bar in the PZT actuator. We have shown that 63.2% of the hysteresis is reduced by eliminating the initial contact force of the PZT actuator. The dual-axis TMD generates static rotational angles of 5.5° and 4.7° in the x-axis and y-axis, respectively, at 16 Vdc. The measured resonant frequencies of the dual-axis TMD are 2.1 ± 0.1 kHz in the x-axis and 1.7 ± 0.1 kHz in the y-axis. The dual-axis TMD shows stable operation without severe wear for 21.6 million cycles driven by the 16 Vp-p sinusoidal wave signal at room temperature.
Application of reusable PZT sensors for monitoring initial hydration of concrete
NASA Astrophysics Data System (ADS)
Sabet Divsholi, Bahador; Yang, Yaowen
2009-03-01
To increase the efficiency of in-situ casting or precast of concrete, determining the optimal time of demolding is very important for concrete suppliers. In the first few hours after mixing, the fresh concrete gradually achieves solid properties with reasonable compressive strength. Due to different type and amount of cementitious materials, concrete additives (e.g. retarders) and curing temperature, different rates of hardening are expected. In addition, some other factors like the quality of the cementitious materials further increase the uncertainty in determining appropriate time for demolding of concrete. Electro-mechanical impedance (EMI) based lead zirconate titanate (PZT) sensors have been used for damage detection and structural identification for various engineering structures. In this work, a reusable PZT sensor for monitoring initial hydration of concrete is developed, where a piece of PZT is bonded to a piece of metal with two bolts tightened inside of the holes drilled in the metal. An impedance analyzer is used to acquire the signature of this reusable sensor. During the concrete casting, the bolts and the bottom surface of the metal is set to penetrate part of the fresh concrete. At different stages of the first 48 hours after casting, the PZT signatures are acquired. A statistical analysis technique is employed to associate the change in concrete strength with the changes in the PZT admittance signatures. The results show that the developed sensor is able to effectively monitor the initial hydration of concrete, and can be detached from the concrete for future use.
A Mesoscopic Electromechanical Theory of Ferroelectric Films and Ceramics
NASA Astrophysics Data System (ADS)
Li, Jiangyu; Bhattacharya, Kaushik
2002-08-01
We present a multi-scale modelling framework to predict the effective electromechanical behavior of ferroelectric ceramics and thin films. This paper specifically focuses on the mesoscopic scale and models the effects of domains and domain switching taking into account intergranular constraints. Starting from the properties of the single crystal and the pre-poling granular texture, the theory predicts the domain patterns, the post-poling texture, the saturation polarization, saturation strain and the electromechanical moduli. We demonstrate remarkable agreement with experimental data. The theory also explains the superior electromechanical property of PZT at the morphotropic phase boundary. The paper concludes with the application of the theory to predict the optimal texture for enhanced electromechanical coupling factors and high-strain actuation in selected materials.
Health monitoring of reinforced concrete structures based on PZT admittance signal
NASA Astrophysics Data System (ADS)
Wang, Dansheng; Zhu, Hongping; Shen, Danyan; Ge, Dongdong
2009-07-01
Reinforced concrete (RC) structure is one of most familiar engineering structure styles in the civil engineering community, which often suffer crack damage during their service life because of some factors such as overloading, excessive use, and bad environmental conditions. Thus early detection of crack damage is of special concern for RC structures. Piezoelectric materials have direct and converse piezoelectric effects and can serve as actuators or sensors. A health monitoring method based on PZT admittance signals is addressed in this paper, which use the electromechanical coupling property of piezoelectric materials. An experimental study on health monitoring of a RC beam is implemented based on the PZT admittance signals. In this experiment, the electrical admittances of distributed PZT sheets are measured when the host beams are suffering from variable loads. From the obtained PZT admittance curves one can find that the presence of incipient crack can be captured and the cracking load of the RC beam can also generally determined. By the experimental study it is concluded that the health monitoring technique is quite effective and sensitive for RC structures, which indicates its favorable application foreground in civil engineering field.
Bykov, Igor; Zagorodniy, Yuriy; Yurchenko, Lesya; Korduban, Alexander; Nejezchleb, Karel; Trachevsky, Vladimir; Dimza, Vilnis; Jastrabik, Lubomir; Dejneka, Alexander
2014-08-01
The nature of intrinsic and impurity point defects in lead zirconate titanate (PZT) ceramics has been explored. Using electron paramagnetic resonance (EPR), nuclear magnetic resonance (NMR), and X-ray photoelectron spectroscopy (XPS) methods, several impurity sites have been identified in the materials, including the Fe(3+)-oxygen vacancy (VO) complex and Pb ions. Both of these centers are incorporated into the PZT lattice. The Fe(3+) –VО paramagnetic complex serves as a sensitive probe of the local crystal field in the ceramic; the symmetry of this defect roughly correlates with PZT phase diagram as the composition is varied from PbTiO3 to PbZrO3. NMR spectra (207)Pb in PbTiO3, PbZrO3, and PZT with iron content from 0 to 0.4 wt% showed that increasing the iron concentration leads to a distortion of the crystal structure and to improvement of the electrophysical parameters of the piezoceramics. This is due to the formation of a phase which has a higher symmetry, but at high concentrations of iron (>0.4 wt%), it leads to sharp degradation of electrophysical parameters.
Electromechanical Impedance Response of a Cracked Timoshenko Beam
Zhang, Yuxiang; Xu, Fuhou; Chen, Jiazhao; Wu, Cuiqin; Wen, Dongdong
2011-01-01
Typically, the Electromechanical Impedance (EMI) technique does not use an analytical model for basic damage identification. However, an accurate model is necessary for getting more information about any damage. In this paper, an EMI model is presented for predicting the electromechanical impedance of a cracked beam structure quantitatively. A coupled system of a cracked Timoshenko beam with a pair of PZT patches bonded on the top and bottom surfaces has been considered, where the bonding layers are assumed as a Kelvin-Voigt material. The shear lag model is introduced to describe the load transfer between the PZT patches and the beam structure. The beam crack is simulated as a massless torsional spring; the dynamic equations of the coupled system are derived, which include the crack information and the inertial forces of both PZT patches and adhesive layers. According to the boundary conditions and continuity conditions, the analytical expression of the admittance of PZT patch is obtained. In the case study, the influences of crack and the inertial forces of PZT patches are analyzed. The results show that: (1) the inertial forces affects significantly in high frequency band; and (2) the use of appropriate frequency range can improve the accuracy of damage identification. PMID:22164017
Computational materials science: Think locally, act globally
NASA Astrophysics Data System (ADS)
Rabe, Karin M.
2002-11-01
New first-principles calculations reveal the range of atomic arrangements underlying the average crystallographic structure of a perovskite oxide, PZT. This work opens the door to understanding the exceptional physical behaviour of PZT and related systems.
2003-06-01
T), as T is known to be proportional to vo2 27. From a practical perspective, the maximum vibrational velocity can be defined as the vo which...commercial “hard” and “soft” PZTs, which had been annealed and then “freshly” poled. In addition, results are shown in this figure for PZT-PSM-Yb and... 400 to ~1000, for 10<t minutes. The long time values of Qm for PZT-PSM and PZT-PSM-Yb were even higher, approaching 1600 at t=2800 minutes
Uncertainty quantification for PZT bimorph actuators
NASA Astrophysics Data System (ADS)
Bravo, Nikolas; Smith, Ralph C.; Crews, John
2018-03-01
In this paper, we discuss the development of a high fidelity model for a PZT bimorph actuator used for micro-air vehicles, which includes the Robobee. We developed a high-fidelity model for the actuator using the homogenized energy model (HEM) framework, which quantifies the nonlinear, hysteretic, and rate-dependent behavior inherent to PZT in dynamic operating regimes. We then discussed an inverse problem on the model. We included local and global sensitivity analysis of the parameters in the high-fidelity model. Finally, we will discuss the results of Bayesian inference and uncertainty quantification on the HEM.
Indirect Measurement of Energy Density of Soft PZT Ceramic Utilizing Mechanical Stress
NASA Astrophysics Data System (ADS)
Unruan, Muangjai; Unruan, Sujitra; Inkong, Yutthapong; Yimnirun, Rattikorn
2017-11-01
This paper reports on an indirect measurement of energy density of soft PZT ceramic utilizing mechanical stress. The method works analogous to the Olsen cycle and allows for a large amount of electro-mechanical energy conversion. A maximum energy density of 350 kJ/m3/cycle was found under 0-312 MPa and 1-20 kV/cm of applied mechanical stress and electric field, respectively. The obtained result is substantially higher than the results reported in previous studies of PZT materials utilizing a direct piezoelectric effect.
Self-Balancing, Optical-Center-Pivot, Fast-Steering Mirror
NASA Technical Reports Server (NTRS)
Moore, James D.; Carson, Johnathan W.
2011-01-01
A complete, self-contained fast-steering- mirror (FSM) mechanism is reported consisting of a housing, a mirror and mirror-mounting cell, three PZT (piezoelectric) actuators, and a counterbalance mass. Basically, it is a comparatively stiff, two-axis (tip-tilt), self-balanced FSM. The present invention requires only three (or three pairs for flight redundancy) actuators. If a PZT actuator degrades, the inherent balance remains, and compensation for degraded stroke is made by simply increasing the voltage to the PZT. Prior designs typically do not pivot at the mirror optical center, creating unacceptable beam shear.
NASA Astrophysics Data System (ADS)
Konka, Hari P.; Wahab, M. A.; Lian, K.
2012-01-01
Piezoelectric fiber composite sensors (PFCSs) made from micro-sized lead zirconate titanate (PZT) fibers have many advantages over the traditional bulk PZT sensors for embedded sensor applications. PFCSs as embedded sensors will be an ideal choice to continuously monitor the stress/strain levels and health conditions of composite structures. PFCSs are highly flexible, easily embeddable, have high compatibility with composite structures, and also provides manufacturing flexibility. This research is focused on examining the effects of embedding PFCS sensors (macro-fiber composite (MFC) and piezoelectric fiber composite (PFC)) on the structural integrity of glass-fiber-epoxy composite laminates. The strengths of composite materials with embedded PFCSs and conventional PZT sensors were compared, and the advantages of PFCS sensors over PZTs were demonstrated. Initially a numerical simulation study is performed to understand the local stress/strain field near the embedded sensor region inside a composite specimen. High stress concentration regions were observed near the embedded sensor corner edge. Using PFCS leads to a reduction of 56% in longitudinal stress concentration and 38% in transverse stress concentration, when compared to using the conventional PZTs as embedded sensors. In-plane tensile, in-plane tension-tension fatigue, and short beam strength tests are performed to evaluate the strengths/behavior of the composite specimens containing embedded PFCS. From the tensile test it is observed that embedding PFCS and PZT sensors in the composite structures leads to a reduction in ultimate strength by 3 and 6% respectively. From the fatigue test results it is concluded that both embedded PFCS and PZT sensors do not have a significant effect on the fatigue behavior of the composite specimens. From the short beam strength test it is found that embedding PFCS and PZT sensors leads to a reduction in shear strength by 7 and 15% respectively. Overall the pure PZT sensors seem to have low compatibility with composites when compared to PFCSs.
Enhanced ferroelectric polarization and possible morphotrophic phase boundary in PZT-based alloys
Parker, David S.; Singh, David; McGuire, Michael A.; ...
2016-05-16
We present a combined theoretical and experimental study of alloys of the high performance piezoelectric PZT (PbZr 0.5Ti 0.5O 3) with BZnT (BiZn 0.5Ti 0.5O 3) and BZnZr (BiZn 0.5Zr 0.5O 3), focusing on atomic displacements, ferroelectric polarization, and elastic stability. From theory we find that the 75-25 PZT-BZnT alloy has substantially larger cation displacements, and hence ferroelectric polarization than the PZT base material, on the tetragonal side of the phase diagram. We also find a possible morphotrophic phase boundary in this system by comparing displacement patterns and optimized c/a ratios. Elastic stability calculations find the structures to be essentiallymore » stable. Lastly, experiments indicate the feasibility of sample synthesis within this alloy system, although measurements do not find significant polarization, probably due to a large coercive field.« less
NASA Astrophysics Data System (ADS)
Norga, G. J.; Fè, Laura; Wouters, D. J.; Maes, H. E.
2000-03-01
We present a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol-gel method. As the substrate temperature during reactive sputtering of the RuO2 bottom electrode layer is reduced, the (111) PZT texture component becomes more pronounced, an effect attributed to the change from columnar to granular RuO2 film morphology. Reducing the residual PZT (100) and (101) texture components was found to be a necessary condition for obtaining optimal pulse switching and endurance properties of the layers. Highly (111)-oriented PZT layers, obtained on RuO2 grown at 150 °C exhibit a net switched charge of >60 μC/cm2 during pulse measurement and <10% degradation after 1011 fatigue cycles.
Magnetoelectric Interactions in Lead-Based and Lead-Free Composites.
Bichurin, Mirza; Petrov, Vladimir; Zakharov, Anatoly; Kovalenko, Denis; Yang, Su Chul; Maurya, Deepam; Bedekar, Vishwas; Priya, Shashank
2011-04-06
Magnetoelectric (ME) composites that simultaneously exhibit ferroelectricity and ferromagnetism have recently gained significant attention as evident by the increasing number of publications. These research activities are direct results of the fact that multiferroic magnetoelectrics offer significant technological promise for multiple devices. Appropriate choice of phases with co-firing capability, magnetostriction and piezoelectric coefficient, such as Ni-PZT and NZFO-PZT, has resulted in fabrication of prototype components that promise transition. In this manuscript, we report the properties of Ni-PZT and NZFO-PZT composites in terms of ME voltage coefficients as a function of frequency and magnetic DC bias. In order to overcome the problem of toxicity of lead, we have conducted experiments with Pb-free piezoelectric compositions. Results are presented on the magnetoelectric performance of Ni-NKN, Ni-NBTBT and NZFO-NKN, NZFO-NBTBT systems illustrating their importance as an environmentally friendly alternative.
Temperature dependent mechanical property of PZT film: an investigation by nanoindentation.
Li, Yingwei; Feng, Shangming; Wu, Wenping; Li, Faxin
2015-01-01
Load-depth curves of an unpoled Lead Zirconate Titanate (PZT) film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains.
Wang, Zhijie; Cao, Dawei; Wen, Liaoyong; Xu, Rui; Obergfell, Manuel; Mi, Yan; Zhan, Zhibing; Nasori, Nasori; Demsar, Jure; Lei, Yong
2016-01-01
Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond transient absorbance in different configurations, we demonstrate an effective charge transfer between the nanoparticle array and PZT. Most importantly, we show that the photocurrent can be tuned by nearly an order of magnitude when changing the ferroelectric polarization in PZT, demonstrating a versatile and tunable system for energy harvesting. PMID:26753764
1.6 V nanogenerator for mechanical energy harvesting using PZT nanofibers.
Chen, Xi; Xu, Shiyou; Yao, Nan; Shi, Yong
2010-06-09
Energy harvesting technologies that are engineered to miniature sizes, while still increasing the power delivered to wireless electronics, (1, 2) portable devices, stretchable electronics, (3) and implantable biosensors, (4, 5) are strongly desired. Piezoelectric nanowire- and nanofiber-based generators have potential uses for powering such devices through a conversion of mechanical energy into electrical energy. (6) However, the piezoelectric voltage constant of the semiconductor piezoelectric nanowires in the recently reported piezoelectric nanogenerators (7-12) is lower than that of lead zirconate titanate (PZT) nanomaterials. Here we report a piezoelectric nanogenerator based on PZT nanofibers. The PZT nanofibers, with a diameter and length of approximately 60 nm and 500 microm, were aligned on interdigitated electrodes of platinum fine wires and packaged using a soft polymer on a silicon substrate. The measured output voltage and power under periodic stress application to the soft polymer was 1.63 V and 0.03 microW, respectively.
Kratzer, Markus; Lasnik, Michael; Röhrig, Sören; Teichert, Christian; Deluca, Marco
2018-01-11
Lead zirconate titanate (PZT) is one of the prominent materials used in polycrystalline piezoelectric devices. Since the ferroelectric domain orientation is the most important parameter affecting the electromechanical performance, analyzing the domain orientation distribution is of great importance for the development and understanding of improved piezoceramic devices. Here, vector piezoresponse force microscopy (vector-PFM) has been applied in order to reconstruct the ferroelectric domain orientation distribution function of polished sections of device-ready polycrystalline lead zirconate titanate (PZT) material. A measurement procedure and a computer program based on the software Mathematica have been developed to automatically evaluate the vector-PFM data for reconstructing the domain orientation function. The method is tested on differently in-plane and out-of-plane poled PZT samples, and the results reveal the expected domain patterns and allow determination of the polarization orientation distribution function at high accuracy.
NASA Astrophysics Data System (ADS)
Chen, Bo; Su, Ning-Ning; Cui, Wen-Li; Yan, Shi-Nong
2018-04-01
In this work, a type of asymmetric granule/matrix composite film is designed, where the Ni granule is dispersed in PZT matrix, meanwhile the top and bottom electrode is constituted by Au and SRO respectively. Predicted through the electrostatic screening model and mean field approximation, considerable electrostatic charge is induced on Ni granule surface by ferroelectric PZT polarization. Predicted through the spin splitting model and spherical shell approximation, both the magnetization and magnetic anisotropy of Ni granule are modulated by ferroelectric PZT polarization. As the volume fraction of Ni granule is increased, the electric modulation of magnetization and magnetic anisotropy is reduced and enhanced respectively. As the dimension of granule/matrix composite is varied, such modulation is retained. Due to the large area-volume ratio of nano-granule, this work benefits to realize the converse magnetoelectric coupling in nanoscale.
Enhanced ferroelectric and piezoelectric properties in La-modified PZT ceramics
NASA Astrophysics Data System (ADS)
Kour, P.; Pradhan, S. K.; Kumar, Pawan; Sinha, S. K.; Kar, Manoranjan
2016-06-01
The effect of lanthanum (La) doping on ferroelectric and piezoelectric properties of lead zirconate titanate (PZT) sample has been investigated. Pb1- x La x Zr0.52Ti0.48O3 ceramics with x = 0.00, 0.02, 0.04, 0.06 and 0.10 were prepared by the sol-gel technique. Raman and Fourier transforms infrared spectroscopy have been employed to understand the structural modification due to ionic size mismatch. Raman spectra show the existence of both rhombohedral and tetragonal crystal symmetries. It also shows the dielectric relaxation with increase in La concentration in the sample. The increase in lattice strain due to La doping increases the remnant polarization and coercive field. The linear piezoelectric coefficient increases with the increase in La concentration. It reveals that La-substituted PZT is a better candidate for piezoelectric sensor applications as compared to that of PZT.
Magnetoelectric Interactions in Lead-Based and Lead-Free Composites
Bichurin, Mirza; Petrov, Vladimir; Zakharov, Anatoly; Kovalenko, Denis; Yang, Su Chul; Maurya, Deepam; Bedekar, Vishwas; Priya, Shashank
2011-01-01
Magnetoelectric (ME) composites that simultaneously exhibit ferroelectricity and ferromagnetism have recently gained significant attention as evident by the increasing number of publications. These research activities are direct results of the fact that multiferroic magnetoelectrics offer significant technological promise for multiple devices. Appropriate choice of phases with co-firing capability, magnetostriction and piezoelectric coefficient, such as Ni-PZT and NZFO-PZT, has resulted in fabrication of prototype components that promise transition. In this manuscript, we report the properties of Ni-PZT and NZFO-PZT composites in terms of ME voltage coefficients as a function of frequency and magnetic DC bias. In order to overcome the problem of toxicity of lead, we have conducted experiments with Pb-free piezoelectric compositions. Results are presented on the magnetoelectric performance of Ni-NKN, Ni-NBTBT and NZFO-NKN, NZFO-NBTBT systems illustrating their importance as an environmentally friendly alternative. PMID:28879946
NASA Astrophysics Data System (ADS)
Liang, K.; Zhou, P.; Ma, Z. J.; Qi, Y. J.; Mei, Z. H.; Zhang, T. J.
2017-05-01
Magnetoelectric (ME) coupling effect of 2-2-type ferromagnetic/ferroelectric bi-layer multiferroic epitaxial thin film (La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3, LSMO/PZT) on SrRuO3 (SRO) substrate is investigated systematically by using Landau-Ginzburg-Devonshire (LGD) thermodynamic theory and modified constitutive equations. The calculating results clarify the detail relationships between ME coupling response and the residual strain, the volume fraction of constituent phases, the interface coupling coefficients, the magnetic field and the temperature. It also shows that improved ME coupling response can be modulated by these parameters. External magnetic fields (H1) induced ME coupling effect could be enhanced around Curie Temperature (Tc) of ferromagnetic phase and ME voltage coefficient (αE31) approaches a maximum at H1 ∼ 4.5 kOe near Tc. The remarkable variations of ME coupling response can be used to provide useful guidelines on the design of multifunctional devices.
Practical issues in the implementation of electro-mechanical impedance technique for NDE
NASA Astrophysics Data System (ADS)
Bhalla, Suresh; Naidu, Akshay S. K.; Ong, Chin W.; Soh, Chee-Kiong
2002-11-01
The electro-mechanical impedance (EMI) technique, which utilizes "smart" piezoceramic (PZT) patches as collocated actuator-sensors, has recently emerged as a powerful technique for diagnosing incipient damages in structures and machines. This technique utilizes the electro-mechanical admittance of a PZT patch surface bonded to the structure as the diagnostic signature of the structure. The operating frequency is typically maintained in the kHz range for optimum sensitivity in damage detection. However, there are many impediments to the practical application of the technique for NDE of real-life structures, such as aerospace systems, machine parts, and civil-infrastructures like buildings and bridges. The main challenge lies in achieving consistent behavior of the bonded PZT patch over sufficiently long periods, typically of the order of years, under "harsh" environment. This necessitates protecting the PZT patch from environmental effects. This paper reports a dedicated investigation stretched over several months to ascertain the long-term consistency of the electro-mechanical admittance signatures of PZT patches. Possible protection of the patch by means of suitable covering layer as well as the effects of the layer on damage sensitivity of the patch are also investigated. It is found that a suitable cover is necessary to protect the PZT patch, especially against humidity and to ensure long life. It is also found that the patch exhibits a high sensitivity to damage even in the presence of the protection layer. The paper also includes a brief discussion on few recent applications of the EMI technique and possible use of multiplexing to optimize sensor interrogation time.
We present development of a process to perform greyscale photolithography on a 2.55-m thick photoresist in order to transfer tiered and sloped...platinum or iridium oxide (IrO2) electrodes above and below each layer. Process variables including resist rehydration , focus of the exposure, and UV cure...bake temperature were optimized to produce the best greyscale profile through the thickness of the resist.
Harvesting vibrational energy due to intermodal systems via nano coated piezo electric devices.
DOT National Transportation Integrated Search
2015-12-01
Vibrational energy resulting from intermodal transport systems can be recovered through the use of energy harvesting system consisting of PZT piezo electric material as the primary energy harvesting component. The ability of traditional PZT piezo ele...
NASA Technical Reports Server (NTRS)
Hishinumat, Yoshikazu; Yang, Eui - Hyeok (EH)
2005-01-01
We have demonstrated a large aperture (50 mm x 50 mm) continuous membrane deformable mirror (DM) with a large-stroke piezoelectric unimorph actuator array. The DM consists of a continuous, large aperture, silicon membrane 'transferred' in its entirety onto a 20 x 20 piezoelectric unimorph actuator array. A PZT unimorph actuator, 2.5 mm in diameter with optimized PZT/Si thickness and design showed a deflection of 5.7 [m at 20V. An assembled DM showed an operating frequency bandwidth of 30 kHz and influence function of approximately 30%.
An experimental approach to free vibration analysis of smart composite beam
NASA Astrophysics Data System (ADS)
Yashavantha Kumar, G. A.; Sathish Kumar, K. M.
2018-02-01
Experimental vibration analysis is a main concern of this study. In designing any structural component the important parameter that has to be considered is vibration. The present work involves the experimental investigation of free vibration analysis of a smart beam. Smart beam consists of glass/epoxy composite as a main substrate and two PZT patches. The PZT patches are glued above and below the main beam. By experimentation the natural frequencies and mode shapes are obtained for both with and without PZT patches of a beam. Finally through experimentation the response of the smart beam is recorded.
Voltage generation of piezoelectric cantilevers by laser heating
Hsieh, Chun-Yi; Liu, Wei-Hung; Chen, Yang-Fang; Shih, Wan Y.; Gao, Xiaotong; Shih, Wei-Heng
2012-01-01
Converting ambient thermal energy into electricity is of great interest in harvesting energy from the environment. Piezoelectric cantilevers have previously been shown to be an effective biosensor and a tool for elasticity mapping. Here we show that a single piezoelectric (lead-zirconate titanate (PZT)) layer cantilever can be used to convert heat to electricity through pyroelectric effect. Furthermore, piezoelectric-metal (PZT-Ti) bi-layer cantilever showed an enhanced induced voltage over the single PZT layer alone due to the additional piezoelectric effect. This type of device can be a way for converting heat energy into electricity. PMID:23258941
First-Principles calculations of Piezoelectricity and Polarization Rotation in Pb(Zr_0.5Ti_0.5)O_3
NASA Astrophysics Data System (ADS)
Wu, Zhigang; Krakauer, Henry
2002-03-01
Recent experimental and theoretical work [1-3] indicates that polarization rotation via a monoclinic phase at the morphotropic phase boundary in PZT [1-3] is responsible for its large piezoelectric response. We investigate this using the first-principles LAPW+LO method within the local density functional approximation. Calculated internal coordinates of monoclinic PZT(50/50) are in good agreement with PZT(52/48) experimental data [4]. Bulk spontaneous polarization and piezoelectric stress tensor elements of chemically ordered PbZr_1/2Ti_1/2O3 (PZT 50/50) are determined from relaxed ground-state Berry's phase calculations while constraining the symmetry to monoclinic Cm. Large piezoelectric response is found as the polarization rotates within the Cm mirror plane. These first-principles results show that polarization rotation can explain the large measured piezoelectric constants in ceramic PZT. * Supported by ONR. [1] H. Fu and Cohen, Nature 403, 281 (2000). [2] B. Noheda, D.E. Cox, G. Shirane, S-E. Park, L.E. Cross and Z. Zhong Phys. Rev. Lett. 86, 3891 (2001). [3] L. Bellaiche, A. Garcia and D. Vanderbilt, Phys. Rev. Lett. 84, 5427 (2000). [4] B. Noheda, J.A. Gonzalo, L.E. Cross, R. Guo, S.-E. Park, D.E. Cox and G. Shirane, Phys. Rev. B 61, 8687 (2000).
Yang, Yaowen; Divsholi, Bahador Sabet
2010-01-01
The electromechanical (EM) impedance technique using piezoelectric lead zirconate titanate (PZT) transducers for structural health monitoring (SHM) has attracted considerable attention in various engineering fields. In the conventional EM impedance technique, the EM admittance of a PZT transducer is used as a damage indicator. Statistical analysis methods such as root mean square deviation (RMSD) have been employed to associate the damage level with the changes in the EM admittance signatures, but it is difficult to determine the location of damage using such methods. This paper proposes a new approach by dividing the large frequency (30–400 kHz) range into sub-frequency intervals and calculating their respective RMSD values. The RMSD of the sub-frequency intervals (RMSD-S) will be used to study the severity and location of damage. An experiment is carried out on a real size concrete structure subjected to artificial damage. It is observed that damage close to the PZT changes the high frequency range RMSD-S significantly, while the damage far away from the PZT changes the RMSD-S in the low frequency range significantly. The relationship between the frequency range and the PZT sensing region is also presented. Finally, a damage identification scheme is proposed to estimate the location and severity of damage in concrete structures. PMID:22163548
Effect of External Vibration on PZT Impedance Signature.
Yang, Yaowen; Miao, Aiwei
2008-11-01
Piezoelectric ceramic Lead Zirconate Titanate (PZT) transducers, working on the principle of electromechanical impedance (EMI), are increasingly applied for structural health monitoring (SHM) in aerospace, civil and mechanical engineering. The PZT transducers are usually surface bonded to or embedded in a structure and subjected to actuation so as to interrogate the structure at the desired frequency range. The interrogation results in the electromechanical admittance (inverse of EMI) signatures which can be used to estimate the structural health or integrity according to the changes of the signatures. In the existing EMI method, the monitored structure is only excited by the PZT transducers for the interrogating of EMI signature, while the vibration of the structure caused by the external excitations other than the PZT actuation is not considered. However, many structures work under vibrations in practice. To monitor such structures, issues related to the effects of vibration on the EMI signature need to be addressed because these effects may lead to misinterpretation of the structural health. This paper develops an EMI model for beam structures, which takes into account the effect of beam vibration caused by the external excitations. An experimental study is carried out to verify the theoretical model. A lab size specimen with different external excitations is tested and the effect of vibration on EMI signature is discussed.
Theoretical investigation of the SAW properties of ferroelectric film composite structures.
Shih, W C; Wu, M S
1998-01-01
The characteristics of surface acoustic waves (SAW) propagating on a three-layered structure consisting of a perovskite-type ferroelectric film, a buffer layer and a semiconductor substrate have been studied theoretically. Large coupling coefficients (K(2)) can be obtained when the interdigital transducer (IDT) is on top of the perovskite-type ferroelectric film, with (type 4) and without (type 3) the floating-plane electrode at the perovskite-type ferroelectric film-buffer layer interface. In the above cases, the peak values of K (2) Of the Pb(Zr,Ti)O(3) (PZT) films (3.2%-3.8%) are higher than those of the BaTiO(3) (BT) and PbTiO(3) (PT) films. In the IDT configuration of type 4, there exists a minor peak of the coupling coefficients for the PZT and BT films, but not for the PT films when the normalized thickness (hK) of the perovskite-type ferroelectric film is about 0.3. The minor peak values of the coupling coefficients (0.62%-0.93%) for different layered structures (PZT/STO/Si, PZT/MgO/Si, and PZT/MgO/GaAs) all decrease when we increase hK value from 0 to 0.25. The results could be useful in the integration of ferroelectric devices, semiconductor devices, and SAW devices on the same substrate.
Capobianco, Joseph A.; Shih, Wan Y.; Adams, Gregory P.; Shih, Wei-Heng
2011-01-01
We have investigated real-time, label-free, in-situ detection of human epidermal growth factor receptor 2 (Her2) in diluted serum using the first longitudinal extension mode of a lead zirconate-lead titanate (PZT)/glass piezoelectric microcantilever sensor (PEMS) with H3 single-chain variable fragment (scFv) immobilized on the 3-mercaptopropyltrimethoxysilane (MPS) insulation layer of the PEMS surface. We showed that with the longitudinal extension mode, the PZT/glass PEMS consisting of a 1 mm long and 127 μm thick PZT layer bonded with a 75 μm thick glass layer with a 1.8 mm long glass tip could detect Her2 at a concentration of 6-60 ng/ml (or 0.06-0.6 nM) in diluted human serum, about 100 times lower than the concentration limit obtained using the lower-frequency flexural mode of a similar PZT/glass PEMS. We further showed that with the longitudinal mode, the PZT/glass PEMS determined the equilibrium H3-Her2 dissociation constant Kd to be 3.3±0.3 × 10-8 M consistent with the value, 3.2±0.28 ×10-8 M deduced by the surface plasmon resonance method (BIAcore). PMID:22888196