Miniaturized ultrasound imaging probes enabled by CMUT arrays with integrated frontend electronic circuits.

PubMed

Khuri-Yakub, B T; Oralkan, Omer; Nikoozadeh, Amin; Wygant, Ira O; Zhuang, Steve; Gencel, Mustafa; Choe, Jung Woo; Stephens, Douglas N; de la Rama, Alan; Chen, Peter; Lin, Feng; Dentinger, Aaron; Wildes, Douglas; Thomenius, Kai; Shivkumar, Kalyanam; Mahajan, Aman; Seo, Chi Hyung; O'Donnell, Matthew; Truong, Uyen; Sahn, David J

2010-01-01

Capacitive micromachined ultrasonic transducer (CMUT) arrays are conveniently integrated with frontend integrated circuits either monolithically or in a hybrid multichip form. This integration helps with reducing the number of active data processing channels for 2D arrays. This approach also preserves the signal integrity for arrays with small elements. Therefore CMUT arrays integrated with electronic circuits are most suitable to implement miniaturized probes required for many intravascular, intracardiac, and endoscopic applications. This paper presents examples of miniaturized CMUT probes utilizing 1D, 2D, and ring arrays with integrated electronics.

Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

NASA Astrophysics Data System (ADS)

Geier, Michael

Over the last 20 years, extensive research into the structure and properties of single- walled carbon nanotube (SWCNT) has elucidated many of the exceptional qualities possessed by SWCNTs, including record-setting tensile strength, excellent chemical stability, distinctive optoelectronic features, and outstanding electronic transport characteristics. In order to exploit these remarkable qualities, many application-specific hurdles must be overcome before the material can be implemented in commercial products. For electronic applications, recent advances in sorting SWCNTs by electronic type have enabled significant progress towards SWCNT-based integrated circuits. Despite these advances, demonstrations of SWCNT-based devices with suitable characteristics for large-scale integrated circuits have been limited. The processing methodologies, materials integration, and mechanistic understanding of electronic properties developed in this dissertation have enabled unprecedented scales of SWCNT-based transistor fabrication and integrated circuit demonstrations. Innovative materials selection and processing methods are at the core of this work and these advances have led to transistors with the necessary transport properties required for modern circuit integration. First, extensive collaborations with other research groups allowed for the exploration of SWCNT thin-film transistors (TFTs) using a wide variety of materials and processing methods such as new dielectric materials, hybrid semiconductor materials systems, and solution-based printing of SWCNT TFTs. These materials were integrated into circuit demonstrations such as NOR and NAND logic gates, voltage-controlled ring oscillators, and D-flip-flops using both rigid and flexible substrates. This dissertation explores strategies for implementing complementary SWCNT-based circuits, which were developed by using local metal gate structures that achieve enhancement-mode p-type and n-type SWCNT TFTs with widely separated and symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

Displacement Damage in Bipolar Linear Integrated Circuits

NASA Technical Reports Server (NTRS)

Rax, B. G.; Johnston, A. H.; Miyahira, T.

2000-01-01

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Optical printed circuit board (O-PCB) and VLSI photonic integrated circuits: visions, challenges, and progresses

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, S. G.; O, B. H.; Park, S. G.; Noh, H. S.; Kim, K. H.; Song, S. H.

2006-09-01

A collective overview and review is presented on the original work conducted on the theory, design, fabrication, and in-tegration of micro/nano-scale optical wires and photonic devices for applications in a newly-conceived photonic systems called "optical printed circuit board" (O-PCBs) and "VLSI photonic integrated circuits" (VLSI-PIC). These are aimed for compact, high-speed, multi-functional, intelligent, light-weight, low-energy and environmentally friendly, low-cost, and high-volume applications to complement or surpass the capabilities of electrical PCBs (E-PCBs) and/or VLSI electronic integrated circuit (VLSI-IC) systems. These consist of 2-dimensional or 3-dimensional planar arrays of micro/nano-optical wires and circuits to perform the functions of all-optical sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards or substrates. The integrated optical devices include micro/nano-scale waveguides, lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices, made of polymer, silicon and other semiconductor materials. For VLSI photonic integration, photonic crystals and plasmonic structures have been used. Scientific and technological issues concerning the processes of miniaturization, interconnection and integration of these systems as applicable to board-to-board, chip-to-chip, and intra-chip integration, are discussed along with applications for future computers, telecommunications, and sensor-systems. Visions and challenges toward these goals are also discussed.

Miniaturized Ultrasound Imaging Probes Enabled by CMUT Arrays with Integrated Frontend Electronic Circuits

PubMed Central

Khuri-Yakub, B. (Pierre) T.; Oralkan, Ömer; Nikoozadeh, Amin; Wygant, Ira O.; Zhuang, Steve; Gencel, Mustafa; Choe, Jung Woo; Stephens, Douglas N.; de la Rama, Alan; Chen, Peter; Lin, Feng; Dentinger, Aaron; Wildes, Douglas; Thomenius, Kai; Shivkumar, Kalyanam; Mahajan, Aman; Seo, Chi Hyung; O’Donnell, Matthew; Truong, Uyen; Sahn, David J.

2010-01-01

Capacitive micromachined ultrasonic transducer (CMUT) arrays are conveniently integrated with frontend integrated circuits either monolithically or in a hybrid multichip form. This integration helps with reducing the number of active data processing channels for 2D arrays. This approach also preserves the signal integrity for arrays with small elements. Therefore CMUT arrays integrated with electronic circuits are most suitable to implement miniaturized probes required for many intravascular, intracardiac, and endoscopic applications. This paper presents examples of miniaturized CMUT probes utilizing 1D, 2D, and ring arrays with integrated electronics. PMID:21097106

5A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

PubMed Central

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm. PMID:23503294

Functional Laser Trimming Of Thin Film Resistors On Silicon ICs

NASA Astrophysics Data System (ADS)

Mueller, Michael J.; Mickanin, Wes

1986-07-01

Modern Laser Wafer Trimming (LWT) technology achieves exceptional analog circuit performance and precision while maintain-ing the advantages of high production throughput and yield. Microprocessor-driven instrumentation has both emphasized the role of data conversion circuits and demanded sophisticated signal conditioning functions. Advanced analog semiconductor circuits with bandwidths over 1 GHz, and high precision, trimmable, thin-film resistors meet many of todays emerging circuit requirements. Critical to meeting these requirements are optimum choices of laser characteristics, proper materials, trimming process control, accurate modeling of trimmed resistor performance, and appropriate circuit design. Once limited exclusively to hand-crafted, custom integrated circuits, designs are now available in semi-custom circuit configurations. These are similar to those provided for digital designs and supported by computer-aided design (CAD) tools. Integrated with fully automated measurement and trimming systems, these quality circuits can now be produced in quantity to meet the requirements of communications, instrumentation, and signal processing markets.

High-Power, High-Frequency Si-Based (SiGe) Transistors Developed

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2002-01-01

Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.

CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

Integrated Electrode Arrays for Neuro-Prosthetic Implants

NASA Technical Reports Server (NTRS)

Brandon, Erik; Mojarradi, Mohammede

2003-01-01

Arrays of electrodes integrated with chip-scale packages and silicon-based integrated circuits have been proposed for use as medical electronic implants, including neuro-prosthetic devices that might be implanted in brains of patients who suffer from strokes, spinal-cord injuries, or amyotrophic lateral sclerosis. The electrodes of such a device would pick up signals from neurons in the cerebral cortex, and the integrated circuit would perform acquisition and preprocessing of signal data. The output of the integrated circuit could be used to generate, for example, commands for a robotic arm. Electrode arrays capable of acquiring electrical signals from neurons already exist, but heretofore, there has been no convenient means to integrate these arrays with integrated-circuit chips. Such integration is needed in order to eliminate the need for the extensive cabling now used to pass neural signals to data-acquisition and -processing equipment outside the body. The proposed integration would enable progress toward neuro-prostheses that would be less restrictive of patients mobility. An array of electrodes would comprise a set of thin wires of suitable length and composition protruding from and supported by a fine-pitch micro-ball grid array or chip-scale package (see figure). The associated integrated circuit would be mounted on the package face opposite the probe face, using the solder bumps (the balls of the ball grid array) to make the electrical connections between the probes and the input terminals of the integrated circuit. The key innovation is the insertion of probe wires of the appropriate length and material into the solder bumps through a reflow process, thereby fixing the probes in place and electrically connecting them with the integrated circuit. The probes could be tailored to any distribution of lengths and made of any suitable metal that could be drawn into fine wires. Furthermore, the wires could be coated with an insulating layer using anodization or other processes, to achieve the correct electrical impedance. The probe wires and the packaging materials must be biocompatible using such materials as lead-free solders. For protection, the chip and package can be coated with parylene.

Multi-format all-optical processing based on a large-scale, hybridly integrated photonic circuit.

PubMed

Bougioukos, M; Kouloumentas, Ch; Spyropoulou, M; Giannoulis, G; Kalavrouziotis, D; Maziotis, A; Bakopoulos, P; Harmon, R; Rogers, D; Harrison, J; Poustie, A; Maxwell, G; Avramopoulos, H

2011-06-06

We investigate through numerical studies and experiments the performance of a large scale, silica-on-silicon photonic integrated circuit for multi-format regeneration and wavelength-conversion. The circuit encompasses a monolithically integrated array of four SOAs inside two parallel Mach-Zehnder structures, four delay interferometers and a large number of silica waveguides and couplers. Exploiting phase-incoherent techniques, the circuit is capable of processing OOK signals at variable bit rates, DPSK signals at 22 or 44 Gb/s and DQPSK signals at 44 Gbaud. Simulation studies reveal the wavelength-conversion potential of the circuit with enhanced regenerative capabilities for OOK and DPSK modulation formats and acceptable quality degradation for DQPSK format. Regeneration of 22 Gb/s OOK signals with amplified spontaneous emission (ASE) noise and DPSK data signals degraded with amplitude, phase and ASE noise is experimentally validated demonstrating a power penalty improvement up to 1.5 dB.

Addressable-Matrix Integrated-Circuit Test Structure

NASA Technical Reports Server (NTRS)

Sayah, Hoshyar R.; Buehler, Martin G.

1991-01-01

Method of quality control based on use of row- and column-addressable test structure speeds collection of data on widths of resistor lines and coverage of steps in integrated circuits. By use of straightforward mathematical model, line widths and step coverages deduced from measurements of electrical resistances in each of various combinations of lines, steps, and bridges addressable in test structure. Intended for use in evaluating processes and equipment used in manufacture of application-specific integrated circuits.

Integrated-Circuit Pseudorandom-Number Generator

NASA Technical Reports Server (NTRS)

Steelman, James E.; Beasley, Jeff; Aragon, Michael; Ramirez, Francisco; Summers, Kenneth L.; Knoebel, Arthur

1992-01-01

Integrated circuit produces 8-bit pseudorandom numbers from specified probability distribution, at rate of 10 MHz. Use of Boolean logic, circuit implements pseudorandom-number-generating algorithm. Circuit includes eight 12-bit pseudorandom-number generators, outputs are uniformly distributed. 8-bit pseudorandom numbers satisfying specified nonuniform probability distribution are generated by processing uniformly distributed outputs of eight 12-bit pseudorandom-number generators through "pipeline" of D flip-flops, comparators, and memories implementing conditional probabilities on zeros and ones.

Integrated optical circuit engineering IV; Proceedings of the Meeting, Cambridge, MA, Sept. 16, 17, 1986

NASA Astrophysics Data System (ADS)

Mentzer, Mark A.; Sriram, S.

The design and implementation of integrated optical circuits are discussed in reviews and reports. Topics addressed include lithium niobate devices, silicon integrated optics, waveguide phenomena, coupling considerations, processing technology, nonlinear guided-wave optics, integrated optics for fiber systems, and systems considerations and applications. Also included are eight papers and a panel discussion from an SPIE conference on the processing of guided-wave optoelectronic materials (held in Los Angeles, CA, on January 21-22, 1986).

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Bioluminescent bioreporter integrated circuit

DOEpatents

Simpson, Michael L.; Sayler, Gary S.; Paulus, Michael J.

2000-01-01

Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for environmental pollutant detection, oil exploration, drug discovery, industrial process control, and hazardous chemical monitoring.

Integrated neuron circuit for implementing neuromorphic system with synaptic device

NASA Astrophysics Data System (ADS)

Lee, Jeong-Jun; Park, Jungjin; Kwon, Min-Woo; Hwang, Sungmin; Kim, Hyungjin; Park, Byung-Gook

2018-02-01

In this paper, we propose and fabricate Integrate & Fire neuron circuit for implementing neuromorphic system. Overall operation of the circuit is verified by measuring discrete devices and the output characteristics of the circuit. Since the neuron circuit shows asymmetric output characteristic that can drive synaptic device with Spike-Timing-Dependent-Plasticity (STDP) characteristic, the autonomous weight update process is also verified by connecting the synaptic device and the neuron circuit. The timing difference of the pre-neuron and the post-neuron induce autonomous weight change of the synaptic device. Unlike 2-terminal devices, which is frequently used to implement neuromorphic system, proposed scheme of the system enables autonomous weight update and simple configuration by using 4-terminal synapse device and appropriate neuron circuit. Weight update process in the multi-layer neuron-synapse connection ensures implementation of the hardware-based artificial intelligence, based on Spiking-Neural- Network (SNN).

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1980-01-01

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Readout circuit with novel background suppression for long wavelength infrared focal plane arrays

NASA Astrophysics Data System (ADS)

Xie, L.; Xia, X. J.; Zhou, Y. F.; Wen, Y.; Sun, W. F.; Shi, L. X.

2011-02-01

In this article, a novel pixel readout circuit using a switched-capacitor integrator mode background suppression technique is presented for long wavelength infrared focal plane arrays. This circuit can improve dynamic range and signal-to-noise ratio by suppressing the large background current during integration. Compared with other background suppression techniques, the new background suppression technique is less sensitive to the process mismatch and has no additional shot noise. The proposed circuit is theoretically analysed and simulated while taking into account the non-ideal characteristics. The result shows that the background suppression non-uniformity is ultra-low even for a large process mismatch. The background suppression non-uniformity of the proposed circuit can also remain very small with technology scaling.

Plasmonic integrated circuits comprising metal waveguides, multiplexer/demultiplexer, detectors, and logic circuits on a silicon substrate

NASA Astrophysics Data System (ADS)

Fukuda, M.; Ota, M.; Sumimura, A.; Okahisa, S.; Ito, M.; Ishii, Y.; Ishiyama, T.

2017-05-01

A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.

Integrated electrofluidic circuits: pressure sensing with analog and digital operation functionalities for microfluidics.

PubMed

Wu, Chueh-Yu; Lu, Jau-Ching; Liu, Man-Chi; Tung, Yi-Chung

2012-10-21

Microfluidic technology plays an essential role in various lab on a chip devices due to its desired advantages. An automated microfluidic system integrated with actuators and sensors can further achieve better controllability. A number of microfluidic actuation schemes have been well developed. In contrast, most of the existing sensing methods still heavily rely on optical observations and external transducers, which have drawbacks including: costly instrumentation, professional operation, tedious interfacing, and difficulties of scaling up and further signal processing. This paper reports the concept of electrofluidic circuits - electrical circuits which are constructed using ionic liquid (IL)-filled fluidic channels. The developed electrofluidic circuits can be fabricated using a well-developed multi-layer soft lithography (MSL) process with polydimethylsiloxane (PDMS) microfluidic channels. Electrofluidic circuits allow seamless integration of pressure sensors with analog and digital operation functions into microfluidic systems and provide electrical readouts for further signal processing. In the experiments, the analog operation device is constructed based on electrofluidic Wheatstone bridge circuits with electrical outputs of the addition and subtraction results of the applied pressures. The digital operation (AND, OR, and XOR) devices are constructed using the electrofluidic pressure controlled switches, and output electrical signals of digital operations of the applied pressures. The experimental results demonstrate the designed functions for analog and digital operations of applied pressures are successfully achieved using the developed electrofluidic circuits, making them promising to develop integrated microfluidic systems with capabilities of precise pressure monitoring and further feedback control for advanced lab on a chip applications.

A scalable neural chip with synaptic electronics using CMOS integrated memristors.

PubMed

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-09-27

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal-oxide-semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior.

Genetic programs constructed from layered logic gates in single cells

PubMed Central

Moon, Tae Seok; Lou, Chunbo; Tamsir, Alvin; Stanton, Brynne C.; Voigt, Christopher A.

2014-01-01

Genetic programs function to integrate environmental sensors, implement signal processing algorithms and control expression dynamics1. These programs consist of integrated genetic circuits that individually implement operations ranging from digital logic to dynamic circuits2–6, and they have been used in various cellular engineering applications, including the implementation of process control in metabolic networks and the coordination of spatial differentiation in artificial tissues. A key limitation is that the circuits are based on biochemical interactions occurring in the confined volume of the cell, so the size of programs has been limited to a few circuits1,7. Here we apply part mining and directed evolution to build a set of transcriptional AND gates in Escherichia coli. Each AND gate integrates two promoter inputs and controls one promoter output. This allows the gates to be layered by having the output promoter of an upstream circuit serve as the input promoter for a downstream circuit. Each gate consists of a transcription factor that requires a second chaperone protein to activate the output promoter. Multiple activator–chaperone pairs are identified from type III secretion pathways in different strains of bacteria. Directed evolution is applied to increase the dynamic range and orthogonality of the circuits. These gates are connected in different permutations to form programs, the largest of which is a 4-input AND gate that consists of 3 circuits that integrate 4 inducible systems, thus requiring 11 regulatory proteins. Measuring the performance of individual gates is sufficient to capture the behaviour of the complete program. Errors in the output due to delays (faults), a common problem for layered circuits, are not observed. This work demonstrates the successful layering of orthogonal logic gates, a design strategy that could enable the construction of large, integrated circuits in single cells. PMID:23041931

Micromachined integrated quantum circuit containing a superconducting qubit

NASA Astrophysics Data System (ADS)

Brecht, Teresa; Chu, Yiwen; Axline, Christopher; Pfaff, Wolfgang; Blumoff, Jacob; Chou, Kevin; Krayzman, Lev; Frunzio, Luigi; Schoelkopf, Robert

We demonstrate a functional multilayer microwave integrated quantum circuit (MMIQC). This novel hardware architecture combines the high coherence and isolation of three-dimensional structures with the advantages of integrated circuits made with lithographic techniques. We present fabrication and measurement of a two-cavity/one-qubit prototype, including a transmon coupled to a three-dimensional microwave cavity micromachined in a silicon wafer. It comprises a simple MMIQC with competitive lifetimes and the ability to perform circuit QED operations in the strong dispersive regime. Furthermore, the design and fabrication techniques that we have developed are extensible to more complex quantum information processing devices.

Analysis of the possibility of a PGA309 integrated circuit application in pressure sensors

NASA Astrophysics Data System (ADS)

Walendziuk, Wojciech; Baczewski, Michal; Idzkowski, Adam

2016-09-01

This article present the results of research concerning the analysis of the possibilities of applying a PGA309 integrated circuit in transducers used for pressure measurement. The experiments were done with the use of a PGA309EVM-USB evaluation circuit with a BD|SENSORS pressure sensor. A specially prepared MATLAB script was used in the process of the calibration setting choice and the results analysis. The article discusses the worked out algorithm that processes the measurement results, i.e. the algorithm which calculates the desired gain and the offset adjustment voltage of the transducer measurement bridge in relation to the input signal range of the integrated circuit and the temperature of the environment (temperature compensation). The checking procedure was conducted in a measurement laboratory and the obtained result were analyzed and discussed.

Recent progress in low-temperature-process monolithic three dimension technology

NASA Astrophysics Data System (ADS)

Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi

2018-04-01

Monolithic three-dimension (3D) integration is an ultimate alternative method of fabricating high density, high performance, and multi-functional integrated circuits. It offers the promise of being a new approach to increase system performance. How to manage the thermal impact of multi-tiered processes, such as dopant activation, source/drain silicidation, and channel formation, and to prevent the degradation of pre-existing devices/circuits become key challenges. In this paper, we provide updates on several important monolithic 3D works, particularly in sequentially stackable channels, and our recent achievements in monolithic 3D integrated circuit (3D-IC). These results indicate that the advanced 3D architecture with novel design tools enables ultrahigh-density stackable circuits to have superior performance and low power consumption for future artificial intelligence (AI) and internet of things (IoTs) application.

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

High density electronic circuit and process for making

DOEpatents

Morgan, William P.

1999-01-01

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing.

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

2017-02-01

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

The neural circuits of innate fear: detection, integration, action, and memorization

PubMed Central

Silva, Bianca A.; Gross, Cornelius T.

2016-01-01

How fear is represented in the brain has generated a lot of research attention, not only because fear increases the chances for survival when appropriately expressed but also because it can lead to anxiety and stress-related disorders when inadequately processed. In this review, we summarize recent progress in the understanding of the neural circuits processing innate fear in rodents. We propose that these circuits are contained within three main functional units in the brain: a detection unit, responsible for gathering sensory information signaling the presence of a threat; an integration unit, responsible for incorporating the various sensory information and recruiting downstream effectors; and an output unit, in charge of initiating appropriate bodily and behavioral responses to the threatful stimulus. In parallel, the experience of innate fear also instructs a learning process leading to the memorization of the fearful event. Interestingly, while the detection, integration, and output units processing acute fear responses to different threats tend to be harbored in distinct brain circuits, memory encoding of these threats seems to rely on a shared learning system. PMID:27634145

Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varner, R.L.; Blankenship, J.L.; Beene, J.R.

1998-02-01

Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beammore » Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.« less

Conception et realisation d'un echantillonneur de grande vitesse en technologie HIGFET (transistor a effet de champ avec heterostructure et grille isolee)

NASA Astrophysics Data System (ADS)

Tazlauanu, Mihai

The research work reported in this thesis details a new fabrication technology for high speed integrated circuits in the broadest sense, including original contributions to device modeling, circuit simulation, integrated circuit design, wafer fabrication, micro-physical and electrical characterization, process flow and final device testing as part of an electrical system. The primary building block of this technology is the heterostructure insulated gate field effect transistor, HIGFET. We used an InP/InGaAs epitaxial heterostructure to ensure a high charge carrier mobility and hence obtain a higher operating frequency than that currently possible for silicon devices. We designed and built integrated circuits with two system architectures. The first architecture integrates the clock signal generator with the sample and hold circuitry on the InP die, while the second is a hybrid architecture of an InP sample and hold assembled with an external clock signal generator made with ECL circuits on GaAs. To generate the clock signals on the same die with the sample and hold circuits, we developed a digital circuit family based on an original inverter, appropriate for depletion mode NMOS technology. We used this circuit to design buffer amplifiers and ring oscillators. Four mask sets produced in a Cadence environment, have permitted the fabrication of test and working devices. Each new mask generation has reflected the previous achievements and has implemented new structures and circuit techniques. The fabrication technology has undergone successive modifications and refinements to optimize device manufacturing. Particular attention has been paid to the technological robustness. The plasma enhanced etching process (RIE) had been used for an exhaustive study for the statistical simulation of the technological steps. Electrical measurements, performed on the experimental samples, have permitted the modeling of the devices, technological processing to be adjusted and circuit design improved. Electrical measurements performed on dedicated test structures, during the fabrication cycle, allowed the identification and correction of some technological problems (ohmic contacts, current leakage, interconnection integrity, and thermal instabilities). Feedback corrections were validated by dedicated experiments with the experimental effort optimized by statistical techniques (factorial fractional design). (Abstract shortened by UMI.)

Monolithic 3D CMOS Using Layered Semiconductors.

PubMed

Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming

2016-04-06

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

PubMed

Deng, Shijie; Morrison, Alan P

2012-09-15

This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

PubMed Central

Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

2017-01-01

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

Chemical sensors fabricated by a photonic integrated circuit foundry

NASA Astrophysics Data System (ADS)

Stievater, Todd H.; Koo, Kee; Tyndall, Nathan F.; Holmstrom, Scott A.; Kozak, Dmitry A.; Goetz, Peter G.; McGill, R. Andrew; Pruessner, Marcel W.

2018-02-01

We describe the detection of trace concentrations of chemical agents using waveguide-enhanced Raman spectroscopy in a photonic integrated circuit fabricated by AIM Photonics. The photonic integrated circuit is based on a five-centimeter long silicon nitride waveguide with a trench etched in the top cladding to allow access to the evanescent field of the propagating mode by analyte molecules. This waveguide transducer is coated with a sorbent polymer to enhance detection sensitivity and placed between low-loss edge couplers. The photonic integrated circuit is laid-out using the AIM Photonics Process Design Kit and fabricated on a Multi-Project Wafer. We detect chemical warfare agent simulants at sub parts-per-million levels in times of less than a minute. We also discuss anticipated improvements in the level of integration for photonic chemical sensors, as well as existing challenges.

Design techniques for low-voltage analog integrated circuits

NASA Astrophysics Data System (ADS)

Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

2017-08-01

In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Heavy-ion induced single-event upset in integrated circuits

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A.

1991-01-01

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

High density electronic circuit and process for making

DOEpatents

Morgan, W.P.

1999-06-29

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits are disclosed. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing. 8 figs.

Photonic Integrated Circuits

NASA Technical Reports Server (NTRS)

Krainak, Michael; Merritt, Scott

2016-01-01

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

PubMed

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

V-band integrated quadriphase modulator

NASA Technical Reports Server (NTRS)

Grote, A.; Chang, K.

1983-01-01

A V-band integrated circuit quadriphase shift keyed modulator/exciter for space communications systems was developed. Intersatellite communications systems require direct modulation at 60 GHz to enhance signal processing capability. For most systems, particularly space applications, small and lightweight components are essential to alleviate severe system design constraints. Thus to achieve wideband, high data rate systems, direct modulation techniques at millimeter waves using solid state integrated circuit technology are an integral part of the overall technology developments.

A Serial Bus Architecture for Parallel Processing Systems

DTIC Science & Technology

1986-09-01

pins are needed to effect the data transfer. As Integrated Circuits grow in computational power, more communication capacity is needed, pushing...chip. The wider the communication path the more pins are needed to effect the data transfer. As Integrated Circuits grow in computational power, more...13 2. A Suitable Architecture Sought 14 II. OPTIMUM ARCHITECTURE OF LARGE INTEGRATED A. PARTIONING SILICON FOR MAXIMUM 1? 1. Transistor

Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-10-28

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

77 FR 2957 - Application for Manufacturing Authority, Liberty Pumps, Inc. (Submersible and Water Pumps...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-20

..., mechanical seals, electric motors, transformers, capacitors, switches, electronic components, integrated circuits, process controllers, printed circuit assemblies, electrical components, and measuring instruments...

Digitally Programmable Analogue Circuits for Sensor Conditioning Systems

PubMed Central

Zatorre, Guillermo; Medrano, Nicolás; Sanz, María Teresa; Aldea, Concepción; Calvo, Belén; Celma, Santiago

2009-01-01

This work presents two current-mode integrated circuits designed for sensor signal preprocessing in embedded systems. The proposed circuits have been designed to provide good signal transfer and fulfill their function, while minimizing the load effects due to building complex conditioning architectures. The processing architecture based on the proposed building blocks can be reconfigured through digital programmability. Thus, sensor useful range can be expanded, changes in the sensor operation can be compensated for and furthermore, undesirable effects such as device mismatching and undesired physical magnitudes sensor sensibilities are reduced. The circuits were integrated using a 0.35 μm standard CMOS process. Experimental measurements, load effects and a study of two different tuning strategies are presented. From these results, system performance is tested in an application which entails extending the linear range of a magneto-resistive sensor. Circuit area, average power consumption and programmability features allow these circuits to be included in embedded sensing systems as a part of the analogue conditioning components. PMID:22412331

Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

NASA Astrophysics Data System (ADS)

Qu, Zilian; Meng, Yonggang; Zhao, Qian

2015-03-01

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Bioluminescent bioreporter integrated circuit detection methods

DOEpatents

Simpson, Michael L.; Paulus, Michael J.; Sayler, Gary S.; Applegate, Bruce M.; Ripp, Steven A.

2005-06-14

Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for detection of particular analytes, including ammonia and estrogen compounds.

CMOS-micromachined, two-dimenisional transistor arrays for neural recording and stimulation.

PubMed

Lin, J S; Chang, S R; Chang, C H; Lu, S C; Chen, H

2007-01-01

In-plane microelectrode arrays have proven to be useful tools for studying the connectivities and the functions of neural tissues. However, seldom microelectrode arrays are monolithically-integrated with signal-processing circuits, without which the maximum number of electrodes is limited by the compromise with routing complexity and interferences. This paper proposes a CMOS-compatible, two-dimensional array of oxide-semiconductor field-effect transistors(OSFETs), capable of both recording and stimulating neuronal activities. The fabrication of the OSFETs not only requires simply die-level, post-CMOS micromachining process, but also retains metal layers for monolithic integration with signal-processing circuits. A CMOS microsystem containing the OSFET arrays and gain-programmable recording circuits has been fabricated and tested. The preliminary testing results are presented and discussed.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Maximum Temperature Detection System for Integrated Circuits

NASA Astrophysics Data System (ADS)

Frankiewicz, Maciej; Kos, Andrzej

2015-03-01

The paper describes structure and measurement results of the system detecting present maximum temperature on the surface of an integrated circuit. The system consists of the set of proportional to absolute temperature sensors, temperature processing path and a digital part designed in VHDL. Analogue parts of the circuit where designed with full-custom technique. The system is a part of temperature-controlled oscillator circuit - a power management system based on dynamic frequency scaling method. The oscillator cooperates with microprocessor dedicated for thermal experiments. The whole system is implemented in UMC CMOS 0.18 μm (1.8 V) technology.

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip.

PubMed

Shulaker, Max M; Hills, Gage; Park, Rebecca S; Howe, Roger T; Saraswat, Krishna; Wong, H-S Philip; Mitra, Subhasish

2017-07-05

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage-fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce 'highly processed' information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

Additive manufacturing of hybrid circuits

DOE PAGES

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam; ...

2016-03-26

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Design of a front-end integrated circuit for 3D acoustic imaging using 2D CMUT arrays.

PubMed

Ciçek, Ihsan; Bozkurt, Ayhan; Karaman, Mustafa

2005-12-01

Integration of front-end electronics with 2D capacitive micromachined ultrasonic transducer (CMUT) arrays has been a challenging issue due to the small element size and large channel count. We present design and verification of a front-end drive-readout integrated circuit for 3D ultrasonic imaging using 2D CMUT arrays. The circuit cell dedicated to a single CMUT array element consists of a high-voltage pulser and a low-noise readout amplifier. To analyze the circuit cell together with the CMUT element, we developed an electrical CMUT model with parameters derived through finite element analysis, and performed both the pre- and postlayout verification. An experimental chip consisting of 4 X 4 array of the designed circuit cells, each cell occupying a 200 X 200 microm2 area, was formed for the initial test studies and scheduled for fabrication in 0.8 microm, 50 V CMOS technology. The designed circuit is suitable for integration with CMUT arrays through flip-chip bonding and the CMUT-on-CMOS process.

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

PubMed

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

Circuit engineering principles for construction of bipolar large-scale integrated circuit storage devices and very large-scale main memory

NASA Astrophysics Data System (ADS)

Neklyudov, A. A.; Savenkov, V. N.; Sergeyez, A. G.

1984-06-01

Memories are improved by increasing speed or the memory volume on a single chip. The most effective means for increasing speeds in bipolar memories are current control circuits with the lowest extraction times for a specific power consumption (1/4 pJ/bit). The control current circuitry involves multistage current switches and circuits accelerating transient processes in storage elements and links. Circuit principles for the design of bipolar memories with maximum speeds for an assigned minimum of circuit topology are analyzed. Two main classes of storage with current control are considered: the ECL type and super-integrated injection type storage with data capacities of N = 1/4 and N 4/16, respectively. The circuits reduce logic voltage differentials and the volumes of lexical and discharge buses and control circuit buses. The limiting speed is determined by the antiinterference requirements of the memory in storage and extraction modes.

Photo-Spectrometer Realized In A Standard Cmos Ic Process

DOEpatents

Simpson, Michael L.; Ericson, M. Nance; Dress, William B.; Jellison, Gerald E.; Sitter, Jr., David N.; Wintenberg, Alan L.

1999-10-12

A spectrometer, comprises: a semiconductor having a silicon substrate, the substrate having integrally formed thereon a plurality of layers forming photo diodes, each of the photo diodes having an independent spectral response to an input spectra within a spectral range of the semiconductor and each of the photo diodes formed only from at least one of the plurality of layers of the semiconductor above the substrate; and, a signal processing circuit for modifying signals from the photo diodes with respective weights, the weighted signals being representative of a specific spectral response. The photo diodes have different junction depths and different polycrystalline silicon and oxide coverings. The signal processing circuit applies the respective weights and sums the weighted signals. In a corresponding method, a spectrometer is manufactured by manipulating only the standard masks, materials and fabrication steps of standard semiconductor processing, and integrating the spectrometer with a signal processing circuit.

Integrated circuits for accurate linear analogue electric signal processing

NASA Astrophysics Data System (ADS)

Huijsing, J. H.

1981-11-01

The main lines in the design of integrated circuits for accurate analog linear electric signal processing in a frequency range including DC are investigated. A categorization of universal active electronic devices is presented on the basis of the connections of one of the terminals of the input and output ports to the common ground potential. The means for quantifying the attributes of four types of universal active electronic devices are included. The design of integrated operational voltage amplifiers (OVA) is discussed. Several important applications in the field of general instrumentation are numerically evaluated, and the design of operatinal floating amplifiers is presented.

Synthetic Analog and Digital Circuits for Cellular Computation and Memory

PubMed Central

Purcell, Oliver; Lu, Timothy K.

2014-01-01

Biological computation is a major area of focus in synthetic biology because it has the potential to enable a wide range of applications. Synthetic biologists have applied engineering concepts to biological systems in order to construct progressively more complex gene circuits capable of processing information in living cells. Here, we review the current state of computational genetic circuits and describe artificial gene circuits that perform digital and analog computation. We then discuss recent progress in designing gene circuits that exhibit memory, and how memory and computation have been integrated to yield more complex systems that can both process and record information. Finally, we suggest new directions for engineering biological circuits capable of computation. PMID:24794536

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

PubMed

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Modular integration of electronics and microfluidic systems using flexible printed circuit boards.

PubMed

Wu, Amy; Wang, Lisen; Jensen, Erik; Mathies, Richard; Boser, Bernhard

2010-02-21

Microfluidic systems offer an attractive alternative to conventional wet chemical methods with benefits including reduced sample and reagent volumes, shorter reaction times, high-throughput, automation, and low cost. However, most present microfluidic systems rely on external means to analyze reaction products. This substantially adds to the size, complexity, and cost of the overall system. Electronic detection based on sub-millimetre size integrated circuits (ICs) has been demonstrated for a wide range of targets including nucleic and amino acids, but deployment of this technology to date has been limited due to the lack of a flexible process to integrate these chips within microfluidic devices. This paper presents a modular and inexpensive process to integrate ICs with microfluidic systems based on standard printed circuit board (PCB) technology to assemble the independently designed microfluidic and electronic components. The integrated system can accommodate multiple chips of different sizes bonded to glass or PDMS microfluidic systems. Since IC chips and flex PCB manufacturing and assembly are industry standards with low cost, the integrated system is economical for both laboratory and point-of-care settings.

Off-Line Quality Control In Integrated Circuit Fabrication Using Experimental Design

NASA Astrophysics Data System (ADS)

Phadke, M. S.; Kackar, R. N.; Speeney, D. V.; Grieco, M. J.

1987-04-01

Off-line quality control is a systematic method of optimizing production processes and product designs. It is widely used in Japan to produce high quality products at low cost. The method was introduced to us by Professor Genichi Taguchi who is a Deming-award winner and a former Director of the Japanese Academy of Quality. In this paper we will i) describe the off-line quality control method, and ii) document our efforts to optimize the process for forming contact windows in 3.5 Aim CMOS circuits fabricated in the Murray Hill Integrated Circuit Design Capability Laboratory. In the fabrication of integrated circuits it is critically important to produce contact windows of size very near the target dimension. Windows which are too small or too large lead to loss of yield. The off-line quality control method has improved both the process quality and productivity. The variance of the window size has been reduced by a factor of four. Also, processing time for window photolithography has been substantially reduced. The key steps of off-line quality control are: i) Identify important manipulatable process factors and their potential working levels. ii) Perform fractional factorial experiments on the process using orthogonal array designs. iii) Analyze the resulting data to determine the optimum operating levels of the factors. Both the process mean and the process variance are considered in this analysis. iv) Conduct an additional experiment to verify that the new factor levels indeed give an improvement.

Test Structures For Bumpy Integrated Circuits

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Sayah, Hoshyar R.

1989-01-01

Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.

Laboratory experiments in integrated circuit fabrication

NASA Technical Reports Server (NTRS)

Jenkins, Thomas J.; Kolesar, Edward S.

1993-01-01

The objectives of the experiment are fourfold: to provide practical experience implementing the fundamental processes and technology associated with the science and art of integrated circuit (IC) fabrication; to afford the opportunity for the student to apply the theory associated with IC fabrication and semiconductor device operation; to motivate the student to exercise engineering decisions associated with fabricating integrated circuits; and to complement the theory of n-channel MOS and diffused devices that are presented in the classroom by actually fabricating and testing them. Therefore, a balance between theory and practice can be realized in the education of young engineers, whose education is often criticized as lacking sufficient design and practical content.

Experimental Verification of Guided-Wave Lumped Circuits Using Waveguide Metamaterials

NASA Astrophysics Data System (ADS)

Li, Yue; Zhang, Zhijun

2018-04-01

Through the construction and characterization in microwave frequencies, we experimentally demonstrate our recently developed theory of waveguide lumped circuits, i.e., waveguide metatronics [Sci. Adv. 2, e1501790 (2016), 10.1126/sciadv.1501790], as a method to design subwavelength-scaled analog circuits. In the paradigm of waveguide metatronics, numbers of lumped inductors and capacitors are easily integrated functionally inside the waveguide, which is an irreplaceable transmission line in millimeter-wave and terahertz systems with the advantages of low radiation loss and low crosstalk. An example of multiple-ordered metatronic filters with layered structures is fabricated utilizing the technique of substrate integrated waveguides, which can be easily constructed by the printed-circuit-board process. The materials used in the construction are also typical microwave materials with positive permittivity, low loss, and negligible dispersion, imitating the plasmonic materials with negative permittivity in the optical domain. The results verify the theory of waveguide metatronics, which provides an efficient platform of functional lumped circuit design for guided-wave processing.

Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits.

PubMed

Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon

2016-06-22

We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.

Sol-Gel Zinc Oxide Humidity Sensors Integrated with a Ring Oscillator Circuit On-a-Chip

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-01-01

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90 %RH. PMID:25353984

Organic printed photonics: From microring lasers to integrated circuits

PubMed Central

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-01-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

Organic printed photonics: From microring lasers to integrated circuits.

PubMed

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-09-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

NASA Technical Reports Server (NTRS)

Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

2015-01-01

Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

Thermal Radiometer Signal Processing using Radiation Hard CMOS Application Specific Integrated Circuits for use in Harsh Planetary Environments

NASA Astrophysics Data System (ADS)

Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

2015-10-01

Thermal radiometers such as proposed for the Europa Clipper flyby mission [1] require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-cm2/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

Walk-through survey report: Control technology for integrated circuit fabrication, Xerox Corporation, El Segundo, California

NASA Astrophysics Data System (ADS)

Mihlan, G. J.; Ungers, L. J.; Smith, R. K.; Mitchell, R. I.; Jones, J. H.

1983-05-01

A preliminary control technology assessment survey was conducted at the facility which manufactures N-channel metal oxide semiconductor (NMOS) integrated circuits. The facility has industrial hygiene review procedures for evaluating all new and existing process equipment. Employees are trained in safety, use of personal protective equipment, and emergency response. Workers potentially exposed to arsenic are monitored for urinary arsenic levels. The facility should be considered a candidate for detailed study based on the diversity of process operations encountered and the use of state-of-the-art technology and process equipment.

Commercialisation of CMOS integrated circuit technology in multi-electrode arrays for neuroscience and cell-based biosensors.

PubMed

Graham, Anthony H D; Robbins, Jon; Bowen, Chris R; Taylor, John

2011-01-01

The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented.

Neural Networks For Demodulation Of Phase-Modulated Signals

NASA Technical Reports Server (NTRS)

Altes, Richard A.

1995-01-01

Hopfield neural networks proposed for demodulating quadrature phase-shift-keyed (QPSK) signals carrying digital information. Networks solve nonlinear integral equations prior demodulation circuits cannot solve. Consists of set of N operational amplifiers connected in parallel, with weighted feedback from output terminal of each amplifier to input terminals of other amplifiers. Used to solve signal processing problems. Implemented as analog very-large-scale integrated circuit that achieves rapid convergence. Alternatively, implemented as digital simulation of such circuit. Also used to improve phase estimation performance over that of phase-locked loop.

A fast low-power optical memory based on coupled micro-ring lasers

NASA Astrophysics Data System (ADS)

Hill, Martin T.; Dorren, Harmen J. S.; de Vries, Tjibbe; Leijtens, Xaveer J. M.; den Besten, Jan Hendrik; Smalbrugge, Barry; Oei, Yok-Siang; Binsma, Hans; Khoe, Giok-Djan; Smit, Meint K.

2004-11-01

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20ps with 5.5fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Digital correlator with fewer IC's

NASA Technical Reports Server (NTRS)

Apple, G. G.; Rubin, L.

1979-01-01

Digital correlator requires only few integrated circuits to determine synchronization of two 24-bit digital words. Circuit is easily reduced or expanded to accommodate shorter or longer words and can be utilized in industrial and commercial data processing and telecommunications.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability. For large gate count circuits the power per gate must be minimized to prevent reliability and cooling problems. The technical factors which favor increasing GaAs circuit complexity are primarily related to reducing the speed and power penalties incurred when crossing chip boundaries. Because the internal GaAs chip logic levels are not compatible with standard silicon I/O levels input receivers and output drivers are needed to convert levels. These I/O circuits add significant delay to logic paths consume large amounts of power and use an appreciable portion of the die area. The effects of these I/O penalties can be reduced by increasing the ratio of core logic to I/O on a chip. DSP operations which have a large number of logic stages between the input and the output are ideal candidates to take advantage of the performance of GaAs digital circuits. Figure 2 is a schematic representation of the I/O penalties encountered when converting from ECL levels to GaAs

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

PubMed

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

PubMed Central

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-01-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes. PMID:28145513

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator.

PubMed

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-07-04

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing.

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator

PubMed Central

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-01-01

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing. PMID:24993440

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

An evaluation of the Intel 2920 digital signal processing integrated circuit

NASA Technical Reports Server (NTRS)

Heller, J.

1981-01-01

The circuit consists of a digital to analog converter, accumulator, read write memory and UV erasable read only memory. The circuit can convert an analog signal to a digital representation, perform mathematical operations on the digital signal and subsequently convert the digital signal to an analog output. Development software tailored for programming the 2920 is presented.

Capability approval programme for Microwave Hybrid Integrated Circuits (MHICS)

NASA Astrophysics Data System (ADS)

1990-11-01

The general requirements for capability approval of a manufacturing line for Microwave Hybrid Integrated Circuits (MHICs) are defined. ESA approval mandate will be exercized upon conclusion of the evaluation phase and at the end of the program. Before the evaluation phase can commence, the manufacturer must define the capability approval domain by specifying the processes, materials and technology for which approval is sought.

Novel Three-Dimensional Vertical Interconnect Technology for Microwave and RF Applications

NASA Technical Reports Server (NTRS)

Goverdhanam, Kavita; Simons, Rainee N.; Katehi, Linda P. B.

1999-01-01

In this paper, novel 3D interconnects suitable for applications in microwave and RF integrated circuit technology have been presented. The interconnect fabrication process and design details are presented. In addition, measured and numerically modeled results of the performance of the interconnects have been shown. The results indicate that the proposed technology has tremendous potential applications in integrated circuit technology. C,

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Concepts for on-board satellite image registration. Volume 3: Impact of VLSI/VHSIC on satellite on-board signal processing

NASA Technical Reports Server (NTRS)

Aanstoos, J. V.; Snyder, W. E.

1981-01-01

Anticipated major advances in integrated circuit technology in the near future are described as well as their impact on satellite onboard signal processing systems. Dramatic improvements in chip density, speed, power consumption, and system reliability are expected from very large scale integration. Improvements are expected from very large scale integration enable more intelligence to be placed on remote sensing platforms in space, meeting the goals of NASA's information adaptive system concept, a major component of the NASA End-to-End Data System program. A forecast of VLSI technological advances is presented, including a description of the Defense Department's very high speed integrated circuit program, a seven-year research and development effort.

Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

2001-01-01

In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

CMOS image sensor with contour enhancement

NASA Astrophysics Data System (ADS)

Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

2010-10-01

Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

MEMS Technology for Space Applications

NASA Technical Reports Server (NTRS)

vandenBerg, A.; Spiering, V. L.; Lammerink, T. S. J.; Elwenspoek, M.; Bergveld, P.

1995-01-01

Micro-technology enables the manufacturing of all kinds of components for miniature systems or micro-systems, such as sensors, pumps, valves, and channels. The integration of these components into a micro-electro-mechanical system (MEMS) drastically decreases the total system volume and mass. These properties, combined with the increasing need for monitoring and control of small flows in (bio)chemical experiments, makes MEMS attractive for space applications. The level of integration and applied technology depends on the product demands and the market. The ultimate integration is process integration, which results in a one-chip system. An example of process integration is a dosing system of pump, flow sensor, micromixer, and hybrid feedback electronics to regulate the flow. However, for many applications, a hybrid integration of components is sufficient and offers the advantages of design flexibility and even the exchange of components in the case of a modular set up. Currently, we are working on hybrid integration of all kinds of sensors (physical and chemical) and flow system modules towards a modular system; the micro total analysis system (micro TAS). The substrate contains electrical connections as in a printed circuit board (PCB) as well as fluid channels for a circuit channel board (CCB) which, when integrated, form a mixed circuit board (MCB).

State-transfer simulation in integrated waveguide circuits

NASA Astrophysics Data System (ADS)

Latmiral, L.; Di Franco, C.; Mennea, P. L.; Kim, M. S.

2015-08-01

Spin-chain models have been widely studied in terms of quantum information processes, for instance for the faithful transmission of quantum states. Here, we investigate the limitations of mapping this process to an equivalent one through a bosonic chain. In particular, we keep in mind experimental implementations, which the progress in integrated waveguide circuits could make possible in the very near future. We consider the feasibility of exploiting the higher dimensionality of the Hilbert space of the chain elements for the transmission of a larger amount of information, and the effects of unwanted excitations during the process. Finally, we exploit the information-flux method to provide bounds to the transfer fidelity.

Scalable, Lightweight, Integrated and Quick-to-Assemble (SLIQ) Hyperdrives for Functional Circuit Dissection.

PubMed

Liang, Li; Oline, Stefan N; Kirk, Justin C; Schmitt, Lukas Ian; Komorowski, Robert W; Remondes, Miguel; Halassa, Michael M

2017-01-01

Independently adjustable multielectrode arrays are routinely used to interrogate neuronal circuit function, enabling chronic in vivo monitoring of neuronal ensembles in freely behaving animals at a single-cell, single spike resolution. Despite the importance of this approach, its widespread use is limited by highly specialized design and fabrication methods. To address this, we have developed a Scalable, Lightweight, Integrated and Quick-to-assemble multielectrode array platform. This platform additionally integrates optical fibers with independently adjustable electrodes to allow simultaneous single unit recordings and circuit-specific optogenetic targeting and/or manipulation. In current designs, the fully assembled platforms are scalable from 2 to 32 microdrives, and yet range 1-3 g, light enough for small animals. Here, we describe the design process starting from intent in computer-aided design, parameter testing through finite element analysis and experimental means, and implementation of various applications across mice and rats. Combined, our methods may expand the utility of multielectrode recordings and their continued integration with other tools enabling functional dissection of intact neural circuits.

An assessment of the impact of the Department of Defense very high speed integrated circuit program

NASA Astrophysics Data System (ADS)

1982-01-01

The technical and economic effects of the Department of Defense's (DoD) development program for very-high-speed integrated circuits (VHSIC) are examined. The probable effects of this program on the domestic aspects and international position of the integrated-circuit (IC) industry as they relate to the interests of the general public and the DoD are considered. The report presents a review of the unique DoD needs that motivate VHSIC research and development; an estimate of the degree of which these needs are likely to be met by the VHSIC program; a discussion of the effects of the program's demands for manpower, materials, and design and processing technologies; the problems connected with the program's technology export controls; and an assessment of the impact of the program on the structure of the U.S. integrated-circuit industry, its continued development and production of civilian consumer products, and its international competitive position.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

PubMed

Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

2017-08-01

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single Event Effects mitigation with TMRG tool

NASA Astrophysics Data System (ADS)

Kulis, S.

2017-01-01

Single Event Effects (SEE) are a major concern for integrated circuits exposed to radiation. There have been several techniques proposed to protect circuits against radiation-induced upsets. Among the others, the Triple Modular Redundancy (TMR) technique is one of the most popular. The purpose of the Triple Modular Redundancy Generator (TMRG) tool is to automatize the process of triplicating digital circuits freeing the designer from introducing the TMR code manually at the implementation stage. It helps to ensure that triplicated logic is maintained through the design process. Finally, the tool streamlines the process of introducing SEE in gate level simulations for final verification.

Genetically identified spinal interneurons integrating tactile afferents for motor control

PubMed Central

Panek, Izabela; Farah, Carl

2015-01-01

Our movements are shaped by our perception of the world as communicated by our senses. Perception of sensory information has been largely attributed to cortical activity. However, a prior level of sensory processing occurs in the spinal cord. Indeed, sensory inputs directly project to many spinal circuits, some of which communicate with motor circuits within the spinal cord. Therefore, the processing of sensory information for the purpose of ensuring proper movements is distributed between spinal and supraspinal circuits. The mechanisms underlying the integration of sensory information for motor control at the level of the spinal cord have yet to be fully described. Recent research has led to the characterization of spinal neuron populations that share common molecular identities. Identification of molecular markers that define specific populations of spinal neurons is a prerequisite to the application of genetic techniques devised to both delineate the function of these spinal neurons and their connectivity. This strategy has been used in the study of spinal neurons that receive tactile inputs from sensory neurons innervating the skin. As a result, the circuits that include these spinal neurons have been revealed to play important roles in specific aspects of motor function. We describe these genetically identified spinal neurons that integrate tactile information and the contribution of these studies to our understanding of how tactile information shapes motor output. Furthermore, we describe future opportunities that these circuits present for shedding light on the neural mechanisms of tactile processing. PMID:26445867

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Report on phase 1 of the Microprocessor Seminar. [and associated large scale integration

NASA Technical Reports Server (NTRS)

1977-01-01

Proceedings of a seminar on microprocessors and associated large scale integrated (LSI) circuits are presented. The potential for commonality of device requirements, candidate processes and mechanisms for qualifying candidate LSI technologies for high reliability applications, and specifications for testing and testability were among the topics discussed. Various programs and tentative plans of the participating organizations in the development of high reliability LSI circuits are given.

Integrated optical circuit engineering V; Proceedings of the Meeting, San Diego, CA, Aug. 17-20, 1987

NASA Astrophysics Data System (ADS)

Mentzer, Mark A.

Recent advances in the theoretical and practical design and applications of optoelectronic devices and optical circuits are examined in reviews and reports. Topics discussed include system and market considerations, guided-wave phenomena, waveguide devices, processing technology, lithium niobate devices, and coupling problems. Consideration is given to testing and measurement, integrated optics for fiber-optic systems, optical interconnect technology, and optical computing.

Bio-inspired feedback-circuit implementation of discrete, free energy optimizing, winner-take-all computations.

PubMed

Genewein, Tim; Braun, Daniel A

2016-06-01

Bayesian inference and bounded rational decision-making require the accumulation of evidence or utility, respectively, to transform a prior belief or strategy into a posterior probability distribution over hypotheses or actions. Crucially, this process cannot be simply realized by independent integrators, since the different hypotheses and actions also compete with each other. In continuous time, this competitive integration process can be described by a special case of the replicator equation. Here we investigate simple analog electric circuits that implement the underlying differential equation under the constraint that we only permit a limited set of building blocks that we regard as biologically interpretable, such as capacitors, resistors, voltage-dependent conductances and voltage- or current-controlled current and voltage sources. The appeal of these circuits is that they intrinsically perform normalization without requiring an explicit divisive normalization. However, even in idealized simulations, we find that these circuits are very sensitive to internal noise as they accumulate error over time. We discuss in how far neural circuits could implement these operations that might provide a generic competitive principle underlying both perception and action.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

Nanoscale on-chip all-optical logic parity checker in integrated plasmonic circuits in optical communication range

PubMed Central

Wang, Feifan; Gong, Zibo; Hu, Xiaoyong; Yang, Xiaoyu; Yang, Hong; Gong, Qihuang

2016-01-01

The nanoscale chip-integrated all-optical logic parity checker is an essential core component for optical computing systems and ultrahigh-speed ultrawide-band information processing chips. Unfortunately, little experimental progress has been made in development of these devices to date because of material bottleneck limitations and a lack of effective realization mechanisms. Here, we report a simple and efficient strategy for direct realization of nanoscale chip-integrated all-optical logic parity checkers in integrated plasmonic circuits in the optical communication range. The proposed parity checker consists of two-level cascaded exclusive-OR (XOR) logic gates that are realized based on the linear interference of surface plasmon polaritons propagating in the plasmonic waveguides. The parity of the number of logic 1s in the incident four-bit logic signals is determined, and the output signal is given the logic state 0 for even parity (and 1 for odd parity). Compared with previous reports, the overall device feature size is reduced by more than two orders of magnitude, while ultralow energy consumption is maintained. This work raises the possibility of realization of large-scale integrated information processing chips based on integrated plasmonic circuits, and also provides a way to overcome the intrinsic limitations of serious surface plasmon polariton losses for on-chip integration applications. PMID:27073154

Nanoscale on-chip all-optical logic parity checker in integrated plasmonic circuits in optical communication range.

PubMed

Wang, Feifan; Gong, Zibo; Hu, Xiaoyong; Yang, Xiaoyu; Yang, Hong; Gong, Qihuang

2016-04-13

The nanoscale chip-integrated all-optical logic parity checker is an essential core component for optical computing systems and ultrahigh-speed ultrawide-band information processing chips. Unfortunately, little experimental progress has been made in development of these devices to date because of material bottleneck limitations and a lack of effective realization mechanisms. Here, we report a simple and efficient strategy for direct realization of nanoscale chip-integrated all-optical logic parity checkers in integrated plasmonic circuits in the optical communication range. The proposed parity checker consists of two-level cascaded exclusive-OR (XOR) logic gates that are realized based on the linear interference of surface plasmon polaritons propagating in the plasmonic waveguides. The parity of the number of logic 1s in the incident four-bit logic signals is determined, and the output signal is given the logic state 0 for even parity (and 1 for odd parity). Compared with previous reports, the overall device feature size is reduced by more than two orders of magnitude, while ultralow energy consumption is maintained. This work raises the possibility of realization of large-scale integrated information processing chips based on integrated plasmonic circuits, and also provides a way to overcome the intrinsic limitations of serious surface plasmon polariton losses for on-chip integration applications.

Synthetic analog and digital circuits for cellular computation and memory.

PubMed

Purcell, Oliver; Lu, Timothy K

2014-10-01

Biological computation is a major area of focus in synthetic biology because it has the potential to enable a wide range of applications. Synthetic biologists have applied engineering concepts to biological systems in order to construct progressively more complex gene circuits capable of processing information in living cells. Here, we review the current state of computational genetic circuits and describe artificial gene circuits that perform digital and analog computation. We then discuss recent progress in designing gene networks that exhibit memory, and how memory and computation have been integrated to yield more complex systems that can both process and record information. Finally, we suggest new directions for engineering biological circuits capable of computation. Copyright © 2014 The Authors. Published by Elsevier Ltd.. All rights reserved.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations.

PubMed

Tsai, Tsung-Heng; Tsai, Hao-Cheng; Wu, Tien-Keng

2014-10-01

This paper presents a capacitive tactile sensor fabricated in a standard CMOS process. Both of the sensor and readout circuits are integrated on a single chip by a TSMC 0.35 μm CMOS MEMS technology. In order to improve the sensitivity, a T-shaped protrusion is proposed and implemented. This sensor comprises the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few post-processing steps. By a nano-indenter, the measured spring constant of the T-shaped structure is 2.19 kNewton/m. Fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction are utilized to compensate process variations and improve the accuracy of the readout circuits. The measured displacement-to-voltage transductance is 7.15 mV/nm, and the sensitivity is 3.26 mV/μNewton. The overall power dissipation is 132.8 μW.

Thin glass based packaging and photonic single-mode waveguide integration by ion-exchange technology on board and module level

NASA Astrophysics Data System (ADS)

Brusberg, Lars; Lang, Günter; Schröder, Henning

2011-01-01

The proposed novel packaging approach merges micro-system packaging and glass integrated optics. It provides 3D optical single-mode intra system links to bridge the gap between novel photonic integrated circuits and the glass fibers for inter system interconnects. We introduce our hybrid 3D photonic packaging approach based on thin glass substrates with planar integrated optical single-mode waveguides for fiber-to-chip and chip-to-chip links. Optical mirrors and lenses provide optical mode matching for photonic IC assemblies and optical fiber interconnects. Thin glass is commercially available in panel and wafer formats and characterizes excellent optical and high-frequency properties as reviewed in the paper. That makes it perfect for micro-system packaging. The adopted planar waveguide process based on ion-exchange technology is capable for high-volume manufacturing. This ion-exchange process and the optical propagation are described in detail for thin glass substrates. An extensive characterization of all basic circuit elements like straight and curved waveguides, couplers and crosses proves the low attenuation of the optical circuit elements.

Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

PubMed Central

Graham, Anthony H. D.; Robbins, Jon; Bowen, Chris R.; Taylor, John

2011-01-01

The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented. PMID:22163884

Method for deposition of a conductor in integrated circuits

DOEpatents

Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

1997-01-01

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Semiconductor Cubing

NASA Technical Reports Server (NTRS)

1996-01-01

Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

NASA Technical Reports Server (NTRS)

Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

1979-01-01

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

Equilibrium Noise in Ion Selective Field Effect Transistors.

DTIC Science & Technology

1982-07-21

face. These parameters have been evaluated for several ion-selective membranes. DD I JAN ") 1473 EDITION or I Mov 09SIS OSSOLETE ONi 0102-LF-0146601...the "integrated circuit" noise on the processing parameters which were different for the two laboratories. This variability in the "integrated circuit...systems and is useful in the identification of the parameters limiting the performance of -11- these systems. In thermodynamic equilibrium, every

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

PubMed Central

Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

2016-01-01

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

Advanced digital SAR processing study

NASA Technical Reports Server (NTRS)

Martinson, L. W.; Gaffney, B. P.; Liu, B.; Perry, R. P.; Ruvin, A.

1982-01-01

A highly programmable, land based, real time synthetic aperture radar (SAR) processor requiring a processed pixel rate of 2.75 MHz or more in a four look system was designed. Variations in range and azimuth compression, number of looks, range swath, range migration and SR mode were specified. Alternative range and azimuth processing algorithms were examined in conjunction with projected integrated circuit, digital architecture, and software technologies. The advaced digital SAR processor (ADSP) employs an FFT convolver algorithm for both range and azimuth processing in a parallel architecture configuration. Algorithm performace comparisons, design system design, implementation tradeoffs and the results of a supporting survey of integrated circuit and digital architecture technologies are reported. Cost tradeoffs and projections with alternate implementation plans are presented.

On-chip continuous-variable quantum entanglement

NASA Astrophysics Data System (ADS)

Masada, Genta; Furusawa, Akira

2016-09-01

Entanglement is an essential feature of quantum theory and the core of the majority of quantum information science and technologies. Quantum computing is one of the most important fruits of quantum entanglement and requires not only a bipartite entangled state but also more complicated multipartite entanglement. In previous experimental works to demonstrate various entanglement-based quantum information processing, light has been extensively used. Experiments utilizing such a complicated state need highly complex optical circuits to propagate optical beams and a high level of spatial interference between different light beams to generate quantum entanglement or to efficiently perform balanced homodyne measurement. Current experiments have been performed in conventional free-space optics with large numbers of optical components and a relatively large-sized optical setup. Therefore, they are limited in stability and scalability. Integrated photonics offer new tools and additional capabilities for manipulating light in quantum information technology. Owing to integrated waveguide circuits, it is possible to stabilize and miniaturize complex optical circuits and achieve high interference of light beams. The integrated circuits have been firstly developed for discrete-variable systems and then applied to continuous-variable systems. In this article, we review the currently developed scheme for generation and verification of continuous-variable quantum entanglement such as Einstein-Podolsky-Rosen beams using a photonic chip where waveguide circuits are integrated. This includes balanced homodyne measurement of a squeezed state of light. As a simple example, we also review an experiment for generating discrete-variable quantum entanglement using integrated waveguide circuits.

Flexible micro flow sensor for micro aerial vehicles

NASA Astrophysics Data System (ADS)

Zhu, Rong; Que, Ruiyi; Liu, Peng

2017-12-01

This article summarizes our studies on micro flow sensors fabricated on a flexible polyimide circuit board by a low-cost hybrid process of thin-film deposition and circuit printing. The micro flow sensor has merits of flexibility, structural simplicity, easy integrability with circuits, and good sensing performance. The sensor, which adheres to an object surface, can detect the surface flow around the object. In our study, we install the fabricated micro flow sensors on micro aerial vehicles (MAVs) to detect the surface flow variation around the aircraft wing and deduce the aerodynamic parameters of the MAVs in flight. Wind tunnel experiments using the sensors integrated with the MAVs are also conducted.

Novel Vertical Interconnects With 180 Degree Phase Shift for Amplifiers, Filters, and Integrated Antennas

NASA Technical Reports Server (NTRS)

Goverdhanam, Kavita; Simons, Rainee N.; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

2001-01-01

In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semiconductor devices and microelectromechanical systems (MEMS).

Sensor readout detector circuit

DOEpatents

Chu, Dahlon D.; Thelen, Jr., Donald C.

1998-01-01

A sensor readout detector circuit is disclosed that is capable of detecting sensor signals down to a few nanoamperes or less in a high (microampere) background noise level. The circuit operates at a very low standby power level and is triggerable by a sensor event signal that is above a predetermined threshold level. A plurality of sensor readout detector circuits can be formed on a substrate as an integrated circuit (IC). These circuits can operate to process data from an array of sensors in parallel, with only data from active sensors being processed for digitization and analysis. This allows the IC to operate at a low power level with a high data throughput for the active sensors. The circuit may be used with many different types of sensors, including photodetectors, capacitance sensors, chemically-sensitive sensors or combinations thereof to provide a capability for recording transient events or for recording data for a predetermined period of time following an event trigger. The sensor readout detector circuit has applications for portable or satellite-based sensor systems.

Sensor readout detector circuit

DOEpatents

Chu, D.D.; Thelen, D.C. Jr.

1998-08-11

A sensor readout detector circuit is disclosed that is capable of detecting sensor signals down to a few nanoamperes or less in a high (microampere) background noise level. The circuit operates at a very low standby power level and is triggerable by a sensor event signal that is above a predetermined threshold level. A plurality of sensor readout detector circuits can be formed on a substrate as an integrated circuit (IC). These circuits can operate to process data from an array of sensors in parallel, with only data from active sensors being processed for digitization and analysis. This allows the IC to operate at a low power level with a high data throughput for the active sensors. The circuit may be used with many different types of sensors, including photodetectors, capacitance sensors, chemically-sensitive sensors or combinations thereof to provide a capability for recording transient events or for recording data for a predetermined period of time following an event trigger. The sensor readout detector circuit has applications for portable or satellite-based sensor systems. 6 figs.

Interpolator for numerically controlled machine tools

DOEpatents

Bowers, Gary L.; Davenport, Clyde M.; Stephens, Albert E.

1976-01-01

A digital differential analyzer circuit is provided that depending on the embodiment chosen can carry out linear, parabolic, circular or cubic interpolation. In the embodiment for parabolic interpolations, the circuit provides pulse trains for the X and Y slide motors of a two-axis machine to effect tool motion along a parabolic path. The pulse trains are generated by the circuit in such a way that parabolic tool motion is obtained from information contained in only one block of binary input data. A part contour may be approximated by one or more parabolic arcs. Acceleration and initial velocity values from a data block are set in fixed bit size registers for each axis separately but simultaneously and the values are integrated to obtain the movement along the respective axis as a function of time. Integration is performed by continual addition at a specified rate of an integrand value stored in one register to the remainder temporarily stored in another identical size register. Overflows from the addition process are indicative of the integral. The overflow output pulses from the second integration may be applied to motors which position the respective machine slides according to a parabolic motion in time to produce a parabolic machine tool motion in space. An additional register for each axis is provided in the circuit to allow "floating" of the radix points of the integrand registers and the velocity increment to improve position accuracy and to reduce errors encountered when the acceleration integrand magnitudes are small when compared to the velocity integrands. A divider circuit is provided in the output of the circuit to smooth the output pulse spacing and prevent motor stall, because the overflow pulses produced in the binary addition process are spaced unevenly in time. The divider has the effect of passing only every nth motor drive pulse, with n being specifiable. The circuit inputs (integrands, rates, etc.) are scaled to give exactly n times the desired number of pulses out, in order to compensate for the divider.

Design of micro-ring optical sensors and circuits for integration on optical printed circuit boards (O-PCBs)

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, Hyun S.; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.

2007-05-01

We report on the design of micro-ring resonator optical sensors for integration on what we call optical printed circuit boards (O-PCBs). The objective is to realize application-specific O-PCBs, either on hard board or on flexible board, by integrating micro/nano-scale optical sensors for compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly processing of information. The O-PCBs consist of two-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing and then storing, transporting, processing, switching, routing and distributing optical signals that have been collected by means of sensors. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate sensors and other micro/ nano-scale photonic devices. Here, in our study, we focus on the sensors based on the micro-ring structures. We designed bio-sensors using silicon based micro-ring resonator. We investigate the characteristics such as sensitivity and selectivity (or quality factor) of micro-ring resonator for their use in bio-sensing application. We performed simulation studies on the quality factor of micro-ring resonators by varying the radius of the ring resonators and the separation between adjacent waveguides. We introduce the effective coupling coefficient as a realistic value to describe the strength of the coupling in micro-ring resonators.

Multilevel photonic modules for millimeter-wave phased-array antennas

NASA Astrophysics Data System (ADS)

Paolella, Arthur C.; Bauerle, Athena; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

2000-09-01

Millimeter wave phased array systems have antenna element sizes and spacings similar to MMIC chip dimensions by virtue of the operating wavelength. Designing modules in traditional planar packaing techniques are therefore difficult to implement. An advantageous way to maintain a small module footprint compatible with Ka-Band and high frequency systems is to take advantage of two leading edge technologies, opto- electronic integrated circuits (OEICs) and multilevel packaging technology. Under a Phase II SBIR these technologies are combined to form photonic modules for optically controlled millimeter wave phased array antennas. The proposed module, consisting of an OEIC integrated with a planar antenna array will operate on the 40GHz region. The OEIC consists of an InP based dual-depletion PIN photodetector and distributed amplifier. The multi-level module will be fabricated using an enhanced circuit processing thick film process. Since the modules are batch fabricated using an enhanced circuit processing thick film process. Since the modules are batch fabricated, using standard commercial processes, it has the potential to be low cost while maintaining high performance, impacting both military and commercial communications systems.

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

PubMed Central

Vidor, Fábio F.; Meyers, Thorsten; Hilleringmann, Ulrich

2016-01-01

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates. PMID:28335282

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications.

PubMed

Vidor, Fábio F; Meyers, Thorsten; Hilleringmann, Ulrich

2016-08-23

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high- k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the I ON / I OFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V / V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

Microfluidic Serial Dilution Circuit

PubMed Central

Paegel, Brian M.; Grover, William H.; Skelley, Alison M.; Mathies, Richard A.; Joyce, Gerald F.

2008-01-01

In vitro evolution of RNA molecules requires a method for executing many consecutive serial dilutions. To solve this problem, a microfluidic circuit has been fabricated in a three-layer glass-PDMS-glass device. The 400-nL serial dilution circuit contains five integrated membrane valves: three two-way valves arranged in a loop to drive cyclic mixing of the diluent and carryover, and two bus valves to control fluidic access to the circuit through input and output channels. By varying the valve placement in the circuit, carryover fractions from 0.04 to 0.2 were obtained. Each dilution process, which is comprised of a diluent flush cycle followed by a mixing cycle, is carried out with no pipeting, and a sample volume of 400 nL is sufficient for conducting an arbitrary number of serial dilutions. Mixing is precisely controlled by changing the cyclic pumping rate, with a minimum mixing time of 22 s. This microfluidic circuit is generally applicable for integrating automated serial dilution and sample preparation in almost any microfluidic architecture. PMID:17073422

Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.

NASA Technical Reports Server (NTRS)

Pi, C.; Dunn, W. R., Jr.

1972-01-01

A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.

Reverse engineering of integrated circuits

DOEpatents

Chisholm, Gregory H.; Eckmann, Steven T.; Lain, Christopher M.; Veroff, Robert L.

2003-01-01

Software and a method therein to analyze circuits. The software comprises several tools, each of which perform particular functions in the Reverse Engineering process. The analyst, through a standard interface, directs each tool to the portion of the task to which it is most well suited, rendering previously intractable problems solvable. The tools are generally used iteratively to produce a successively more abstract picture of a circuit, about which incomplete a priori knowledge exists.

Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2016-01-01

This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over 1-m scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liang-Yu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2016-01-01

This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over approximately 1-micrometer scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

Basic Mechanisms of Radiation Effects on Electronic Materials, Devices, and Integrated Circuits

DTIC Science & Technology

1982-08-01

recovery time versus reciprocal tempera- ture derived from data of the type shown in Figure 18. . . .31 20 Several ways to alter the charje state of...and long-term recovery processes that occUr in neutron-irradiated silicon ........ 40 29 Annealing factor versus time for 11 ohm-cm p-type bulk silicon...radioactive ele- ments (such as uranium and thorium) which, when incorporated in packaged integrated circuits, can cause occasional transient upsets

Nonreciprocal frequency conversion in a multimode microwave optomechanical circuit

NASA Astrophysics Data System (ADS)

Feofanov, A. K.; Bernier, N. R.; Toth, L. D.; Koottandavida, A.; Kippenberg, T. J.

Nonreciprocal devices such as isolators, circulators, and directional amplifiers are pivotal to quantum signal processing with superconducting circuits. In the microwave domain, commercially available nonreciprocal devices are based on ferrite materials. They are barely compatible with superconducting quantum circuits, lossy, and cannot be integrated on chip. Significant potential exists for implementing non-magnetic chip-scale nonreciprocal devices using microwave optomechanical circuits. Here we demonstrate a possibility of nonreciprocal frequency conversion in a multimode microwave optomechanical circuit using solely optomechanical interaction between modes. The conversion scheme and the results reflecting the actual progress on the experimental implementation of the scheme will be presented.

Chemical Processing of Electrons and Holes.

ERIC Educational Resources Information Center

Anderson, Timothy J.

1990-01-01

Presents a synopsis of four lectures given in an elective senior-level electronic material processing course to introduce solid state electronics. Provides comparisons of a large scale chemical processing plant and an integrated circuit. (YP)

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1977-01-01

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.

Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

NASA Astrophysics Data System (ADS)

Chen, Z.; Harris, V. G.

2012-10-01

It is widely recognized that as electronic systems' operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

Swarm intelligence-based approach for optimal design of CMOS differential amplifier and comparator circuit using a hybrid salp swarm algorithm

NASA Astrophysics Data System (ADS)

Asaithambi, Sasikumar; Rajappa, Muthaiah

2018-05-01

In this paper, an automatic design method based on a swarm intelligence approach for CMOS analog integrated circuit (IC) design is presented. The hybrid meta-heuristics optimization technique, namely, the salp swarm algorithm (SSA), is applied to the optimal sizing of a CMOS differential amplifier and the comparator circuit. SSA is a nature-inspired optimization algorithm which mimics the navigating and hunting behavior of salp. The hybrid SSA is applied to optimize the circuit design parameters and to minimize the MOS transistor sizes. The proposed swarm intelligence approach was successfully implemented for an automatic design and optimization of CMOS analog ICs using Generic Process Design Kit (GPDK) 180 nm technology. The circuit design parameters and design specifications are validated through a simulation program for integrated circuit emphasis simulator. To investigate the efficiency of the proposed approach, comparisons have been carried out with other simulation-based circuit design methods. The performances of hybrid SSA based CMOS analog IC designs are better than the previously reported studies.

Swarm intelligence-based approach for optimal design of CMOS differential amplifier and comparator circuit using a hybrid salp swarm algorithm.

PubMed

Asaithambi, Sasikumar; Rajappa, Muthaiah

2018-05-01

In this paper, an automatic design method based on a swarm intelligence approach for CMOS analog integrated circuit (IC) design is presented. The hybrid meta-heuristics optimization technique, namely, the salp swarm algorithm (SSA), is applied to the optimal sizing of a CMOS differential amplifier and the comparator circuit. SSA is a nature-inspired optimization algorithm which mimics the navigating and hunting behavior of salp. The hybrid SSA is applied to optimize the circuit design parameters and to minimize the MOS transistor sizes. The proposed swarm intelligence approach was successfully implemented for an automatic design and optimization of CMOS analog ICs using Generic Process Design Kit (GPDK) 180 nm technology. The circuit design parameters and design specifications are validated through a simulation program for integrated circuit emphasis simulator. To investigate the efficiency of the proposed approach, comparisons have been carried out with other simulation-based circuit design methods. The performances of hybrid SSA based CMOS analog IC designs are better than the previously reported studies.

Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits

DTIC Science & Technology

2015-10-13

transistors. There are several reasons for this gigantic disparity: insufficient funding and lack of profit-driven investments in superconductor ...Inductance of circuit structures for MIT LL superconductor electronics fabrication process with 8 niobium layers,” IEEE Trans. Appl. Supercond., vol...vol. 25, No. 3, 1301704, June 2015. [7] V. Ambegaokar and A. Baratoff, “Tunneling between superconductors ,” Phys. Rev. Lett., vol. 10, no. 11, pp

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

NASA Astrophysics Data System (ADS)

Shulaker, Max M.; Hills, Gage; Park, Rebecca S.; Howe, Roger T.; Saraswat, Krishna; Wong, H.-S. Philip; Mitra, Subhasish

2017-07-01

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors—promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage—fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce ‘highly processed’ information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

PubMed Central

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

PubMed

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

Method for deposition of a conductor in integrated circuits

DOEpatents

Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

1997-09-02

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

NASA Technical Reports Server (NTRS)

Kunath, R. R.; Bhasin, K. B.

1986-01-01

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

On-chip detection of non-classical light by scalable integration of single-photon detectors

PubMed Central

Najafi, Faraz; Mower, Jacob; Harris, Nicholas C.; Bellei, Francesco; Dane, Andrew; Lee, Catherine; Hu, Xiaolong; Kharel, Prashanta; Marsili, Francesco; Assefa, Solomon; Berggren, Karl K.; Englund, Dirk

2015-01-01

Photonic-integrated circuits have emerged as a scalable platform for complex quantum systems. A central goal is to integrate single-photon detectors to reduce optical losses, latency and wiring complexity associated with off-chip detectors. Superconducting nanowire single-photon detectors (SNSPDs) are particularly attractive because of high detection efficiency, sub-50-ps jitter and nanosecond-scale reset time. However, while single detectors have been incorporated into individual waveguides, the system detection efficiency of multiple SNSPDs in one photonic circuit—required for scalable quantum photonic circuits—has been limited to <0.2%. Here we introduce a micrometer-scale flip-chip process that enables scalable integration of SNSPDs on a range of photonic circuits. Ten low-jitter detectors are integrated on one circuit with 100% device yield. With an average system detection efficiency beyond 10%, and estimated on-chip detection efficiency of 14–52% for four detectors operated simultaneously, we demonstrate, to the best of our knowledge, the first on-chip photon correlation measurements of non-classical light. PMID:25575346

An integrated multichannel neural recording analog front-end ASIC with area-efficient driven right leg circuit.

PubMed

Tao Tang; Wang Ling Goh; Lei Yao; Jia Hao Cheong; Yuan Gao

2017-07-01

This paper describes an integrated multichannel neural recording analog front end (AFE) with a novel area-efficient driven right leg (DRL) circuit to improve the system common mode rejection ratio (CMRR). The proposed AFE consists of an AC-coupled low-noise programmable-gain amplifier, an area-efficient DRL block and a 10-bit SAR ADC. Compared to conventional DRL circuit, the proposed capacitor-less DRL design achieves 90% chip area reduction with enhanced CMRR performance, making it ideal for multichannel biomedical recording applications. The AFE circuit has been designed in a standard 0.18-μm CMOS process. Post-layout simulation results show that the AFE provides two gain settings of 54dB/60dB while consuming 1 μA per channel under a supply voltage of 1 V. The input-referred noise of the AFE integrated from 1 Hz to 10k Hz is only 4 μVrms and the CMRR is 110 dB.

The functional significance of newly born neurons integrated into olfactory bulb circuits.

PubMed

Sakamoto, Masayuki; Kageyama, Ryoichiro; Imayoshi, Itaru

2014-01-01

The olfactory bulb (OB) is the first central processing center for olfactory information connecting with higher areas in the brain, and this neuronal circuitry mediates a variety of odor-evoked behavioral responses. In the adult mammalian brain, continuous neurogenesis occurs in two restricted regions, the subventricular zone (SVZ) of the lateral ventricle and the hippocampal dentate gyrus. New neurons born in the SVZ migrate through the rostral migratory stream and are integrated into the neuronal circuits of the OB throughout life. The significance of this continuous supply of new neurons in the OB has been implicated in plasticity and memory regulation. Two decades of huge investigation in adult neurogenesis revealed the biological importance of integration of new neurons into the olfactory circuits. In this review, we highlight the recent findings about the physiological functions of newly generated neurons in rodent OB circuits and then discuss the contribution of neurogenesis in the brain function. Finally, we introduce cutting edge technologies to monitor and manipulate the activity of new neurons.

The functional significance of newly born neurons integrated into olfactory bulb circuits

PubMed Central

Sakamoto, Masayuki; Kageyama, Ryoichiro; Imayoshi, Itaru

2014-01-01

The olfactory bulb (OB) is the first central processing center for olfactory information connecting with higher areas in the brain, and this neuronal circuitry mediates a variety of odor-evoked behavioral responses. In the adult mammalian brain, continuous neurogenesis occurs in two restricted regions, the subventricular zone (SVZ) of the lateral ventricle and the hippocampal dentate gyrus. New neurons born in the SVZ migrate through the rostral migratory stream and are integrated into the neuronal circuits of the OB throughout life. The significance of this continuous supply of new neurons in the OB has been implicated in plasticity and memory regulation. Two decades of huge investigation in adult neurogenesis revealed the biological importance of integration of new neurons into the olfactory circuits. In this review, we highlight the recent findings about the physiological functions of newly generated neurons in rodent OB circuits and then discuss the contribution of neurogenesis in the brain function. Finally, we introduce cutting edge technologies to monitor and manipulate the activity of new neurons. PMID:24904263

Micro/nanofabricated solid-state thermoelectric generator devices for integrated high voltage power sources

NASA Technical Reports Server (NTRS)

Fleurial, J. P.; Snyder, G. J.; Patel, J.; Huang, C. K.; Ryan, M. A.; Averback, R.; Chen, G.; Hill, C.

2002-01-01

The Jet Propulsion Laboratory has been actively pursuing the development of thermoelectric micro/nanodevices that can be fabricated using a combination of electrochemical deposition and integrated circuit processing techniques.

Alternative Post-Processing on a CMOS Chip to Fabricate a Planar Microelectrode Array

PubMed Central

López-Huerta, Francisco; Herrera-May, Agustín L.; Estrada-López, Johan J.; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S.

2011-01-01

We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+-type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications. PMID:22346681

Alternative post-processing on a CMOS chip to fabricate a planar microelectrode array.

PubMed

López-Huerta, Francisco; Herrera-May, Agustín L; Estrada-López, Johan J; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S

2011-01-01

We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+ -type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications.

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Development of a plan for automating integrated circuit processing

NASA Technical Reports Server (NTRS)

1971-01-01

The operations analysis and equipment evaluations pertinent to the design of an automated production facility capable of manufacturing beam-lead CMOS integrated circuits are reported. The overall plan shows approximate cost of major equipment, production rate and performance capability, flexibility, and special maintenance requirements. Direct computer control is compared with supervisory-mode operations. The plan is limited to wafer processing operations from the starting wafer to the finished beam-lead die after separation etching. The work already accomplished in implementing various automation schemes, and the type of equipment which can be found for instant automation are described. The plan is general, so that small shops or large production units can perhaps benefit. Examples of major types of automated processing machines are shown to illustrate the general concepts of automated wafer processing.

An Automatic Baseline Regulation in a Highly Integrated Receiver Chip for JUNO

NASA Astrophysics Data System (ADS)

Muralidharan, P.; Zambanini, A.; Karagounis, M.; Grewing, C.; Liebau, D.; Nielinger, D.; Robens, M.; Kruth, A.; Peters, C.; Parkalian, N.; Yegin, U.; van Waasen, S.

2017-09-01

This paper describes the data processing unit and an automatic baseline regulation of a highly integrated readout chip (Vulcan) for JUNO. The chip collects data continuously at 1 Gsamples/sec. The Primary data processing which is performed in the integrated circuit can aid to reduce the memory and data processing efforts in the subsequent stages. In addition, a baseline regulator compensating a shift in the baseline is described.

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Mazed, Mohammad; Siegel, Peter; Smith, R. Peter

1995-01-01

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

System and Method for Multi-Wavelength Optical Signal Detection

NASA Technical Reports Server (NTRS)

McGlone, Thomas D. (Inventor)

2017-01-01

The system and method for multi-wavelength optical signal detection enables the detection of optical signal levels significantly below those processed at the discrete circuit level by the use of mixed-signal processing methods implemented with integrated circuit technologies. The present invention is configured to detect and process small signals, which enables the reduction of the optical power required to stimulate detection networks, and lowers the required laser power to make specific measurements. The present invention provides an adaptation of active pixel networks combined with mixed-signal processing methods to provide an integer representation of the received signal as an output. The present invention also provides multi-wavelength laser detection circuits for use in various systems, such as a differential absorption light detection and ranging system.

Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

1995-04-01

While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors complicates the use of feedback circuits. Thus feedback is generally not used in the front-end of our digital process CMOS receivers.

Organic membrane photonic integrated circuits (OMPICs).

PubMed

Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa

2017-08-07

We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

Smart Phase Tuning in Microwave Photonic Integrated Circuits Toward Automated Frequency Multiplication by Design

NASA Astrophysics Data System (ADS)

Nabavi, N.

2018-07-01

The author investigates the monitoring methods for fine adjustment of the previously proposed on-chip architecture for frequency multiplication and translation of harmonics by design. Digital signal processing (DSP) algorithms are utilized to create an optimized microwave photonic integrated circuit functionality toward automated frequency multiplication. The implemented DSP algorithms are formed on discrete Fourier transform and optimization-based algorithms (Greedy and gradient-based algorithms), which are analytically derived and numerically compared based on the accuracy and speed of convergence criteria.

Biosensor system-on-a-chip including CMOS-based signal processing circuits and 64 carbon nanotube-based sensors for the detection of a neurotransmitter.

PubMed

Lee, Byung Yang; Seo, Sung Min; Lee, Dong Joon; Lee, Minbaek; Lee, Joohyung; Cheon, Jun-Ho; Cho, Eunju; Lee, Hyunjoong; Chung, In-Young; Park, Young June; Kim, Suhwan; Hong, Seunghun

2010-04-07

We developed a carbon nanotube (CNT)-based biosensor system-on-a-chip (SoC) for the detection of a neurotransmitter. Here, 64 CNT-based sensors were integrated with silicon-based signal processing circuits in a single chip, which was made possible by combining several technological breakthroughs such as efficient signal processing, uniform CNT networks, and biocompatible functionalization of CNT-based sensors. The chip was utilized to detect glutamate, a neurotransmitter, where ammonia, a byproduct of the enzymatic reaction of glutamate and glutamate oxidase on CNT-based sensors, modulated the conductance signals to the CNT-based sensors. This is a major technological advancement in the integration of CNT-based sensors with microelectronics, and this chip can be readily integrated with larger scale lab-on-a-chip (LoC) systems for various applications such as LoC systems for neural networks.

Soldering Tool for Integrated Circuits

NASA Technical Reports Server (NTRS)

Takahashi, Ted H.

1987-01-01

Many connections soldered simultaneously in confined spaces. Improved soldering tool bonds integrated circuits onto printed-circuit boards. Intended especially for use with so-called "leadless-carrier" integrated circuits.

An on-chip coupled resonator optical waveguide single-photon buffer

PubMed Central

Takesue, Hiroki; Matsuda, Nobuyuki; Kuramochi, Eiichi; Munro, William J.; Notomi, Masaya

2013-01-01

Integrated quantum optical circuits are now seen as one of the most promising approaches with which to realize single-photon quantum information processing. Many of the core elements for such circuits have been realized, including sources, gates and detectors. However, a significant missing function necessary for photonic quantum information processing on-chip is a buffer, where single photons are stored for a short period of time to facilitate circuit synchronization. Here we report an on-chip single-photon buffer based on coupled resonator optical waveguides (CROW) consisting of 400 high-Q photonic crystal line-defect nanocavities. By using the CROW, a pulsed single photon is successfully buffered for 150 ps with 50-ps tunability while maintaining its non-classical properties. Furthermore, we show that our buffer preserves entanglement by storing and retrieving one photon from a time-bin entangled state. This is a significant step towards an all-optical integrated quantum information processor. PMID:24217422

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

Capacitive micromachined ultrasonic transducers for medical imaging and therapy.

PubMed

Khuri-Yakub, Butrus T; Oralkan, Omer

2011-05-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications.

Capacitive micromachined ultrasonic transducers for medical imaging and therapy

PubMed Central

Khuri-Yakub, Butrus T.; Oralkan, Ömer

2011-01-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications. PMID:21860542

Digital MOS integrated circuits

NASA Astrophysics Data System (ADS)

Elmasry, M. I.

MOS in digital circuit design is considered along with aspects of digital VLSI, taking into account a comparison of MOSFET logic circuits, 1-micrometer MOSFET VLSI technology, a generalized guide for MOSFET miniaturization, processing technologies, novel circuit structures for VLSI, and questions of circuit and system design for VLSI. MOS memory cells and circuits are discussed, giving attention to a survey of high-density dynamic RAM cell concepts, one-device cells for dynamic random-access memories, variable resistance polysilicon for high density CMOS Ram, high performance MOS EPROMs using a stacked-gate cell, and the optimization of the latching pulse for dynamic flip-flop sensors. Programmable logic arrays are considered along with digital signal processors, microprocessors, static RAMs, and dynamic RAMs.

Schematic driven silicon photonics design

NASA Astrophysics Data System (ADS)

Chrostowski, Lukas; Lu, Zeqin; Flückiger, Jonas; Pond, James; Klein, Jackson; Wang, Xu; Li, Sarah; Tai, Wei; Hsu, En Yao; Kim, Chan; Ferguson, John; Cone, Chris

2016-03-01

Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is very common for the design to begin at the physical component level. In order to build large integrated photonic systems, it is crucial to design using a schematic-driven approach. This includes simulations based on schematics, schematic-driven layout, layout versus schematic verification, and post-layout simulations. This paper describes such a design framework implemented using Mentor Graphics and Lumerical Solutions design tools. In addition, we describe challenges in silicon photonics related to manufacturing, and how these can be taken into account in simulations and how these impact circuit performance.

Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

PubMed

Chen, Guanyu; Yu, Yu; Zhang, Xinliang

2016-08-01

We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Silica-on-silicon waveguide quantum circuits.

PubMed

Politi, Alberto; Cryan, Martin J; Rarity, John G; Yu, Siyuan; O'Brien, Jeremy L

2008-05-02

Quantum technologies based on photons will likely require an integrated optics architecture for improved performance, miniaturization, and scalability. We demonstrate high-fidelity silica-on-silicon integrated optical realizations of key quantum photonic circuits, including two-photon quantum interference with a visibility of 94.8 +/- 0.5%; a controlled-NOT gate with an average logical basis fidelity of 94.3 +/- 0.2%; and a path-entangled state of two photons with fidelity of >92%. These results show that it is possible to directly "write" sophisticated photonic quantum circuits onto a silicon chip, which will be of benefit to future quantum technologies based on photons, including information processing, communication, metrology, and lithography, as well as the fundamental science of quantum optics.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-06-18

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-01-01

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

Integrated source of tunable nonmaximally mode-entangled photons in a domain-engineered lithium niobate waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ming, Yang; Wu, Zi-jian; Xu, Fei, E-mail: feixu@nju.edu.cn

The nonmaximally entangled state is a special kind of entangled state, which has important applications in quantum information processing. It has been generated in quantum circuits based on bulk optical elements. However, corresponding schemes in integrated quantum circuits have been rarely considered. In this Letter, we propose an effective solution for this problem. An electro-optically tunable nonmaximally mode-entangled photon state is generated in an on-chip domain-engineered lithium niobate (LN) waveguide. Spontaneous parametric down-conversion and electro-optic interaction are effectively combined through suitable domain design to transform the entangled state into our desired formation. Moreover, this is a flexible approach to entanglementmore » architectures. Other kinds of reconfigurable entanglements are also achievable through this method. LN provides a very promising platform for future quantum circuit integration.« less

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Thermally-isolated silicon-based integrated circuits and related methods

DOEpatents

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source.

PubMed

Steidle, Jeffrey A; Fanto, Michael L; Preble, Stefan F; Tison, Christopher C; Howland, Gregory A; Wang, Zihao; Alsing, Paul M

2017-04-04

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

HYMOSS signal processing for pushbroom spectral imaging

NASA Technical Reports Server (NTRS)

Ludwig, David E.

1991-01-01

The objective of the Pushbroom Spectral Imaging Program was to develop on-focal plane electronics which compensate for detector array non-uniformities. The approach taken was to implement a simple two point calibration algorithm on focal plane which allows for offset and linear gain correction. The key on focal plane features which made this technique feasible was the use of a high quality transimpedance amplifier (TIA) and an analog-to-digital converter for each detector channel. Gain compensation is accomplished by varying the feedback capacitance of the integrate and dump TIA. Offset correction is performed by storing offsets in a special on focal plane offset register and digitally subtracting the offsets from the readout data during the multiplexing operation. A custom integrated circuit was designed, fabricated, and tested on this program which proved that nonuniformity compensated, analog-to-digital converting circuits may be used to read out infrared detectors. Irvine Sensors Corporation (ISC) successfully demonstrated the following innovative on-focal-plane functions that allow for correction of detector non-uniformities. Most of the circuit functions demonstrated on this program are finding their way onto future IC's because of their impact on reduced downstream processing, increased focal plane performance, simplified focal plane control, reduced number of dewar connections, as well as the noise immunity of a digital interface dewar. The potential commercial applications for this integrated circuit are primarily in imaging systems. These imaging systems may be used for: security monitoring systems, manufacturing process monitoring, robotics, and for spectral imaging when used in analytical instrumentation.

HYMOSS signal processing for pushbroom spectral imaging

NASA Astrophysics Data System (ADS)

Ludwig, David E.

1991-06-01

The objective of the Pushbroom Spectral Imaging Program was to develop on-focal plane electronics which compensate for detector array non-uniformities. The approach taken was to implement a simple two point calibration algorithm on focal plane which allows for offset and linear gain correction. The key on focal plane features which made this technique feasible was the use of a high quality transimpedance amplifier (TIA) and an analog-to-digital converter for each detector channel. Gain compensation is accomplished by varying the feedback capacitance of the integrate and dump TIA. Offset correction is performed by storing offsets in a special on focal plane offset register and digitally subtracting the offsets from the readout data during the multiplexing operation. A custom integrated circuit was designed, fabricated, and tested on this program which proved that nonuniformity compensated, analog-to-digital converting circuits may be used to read out infrared detectors. Irvine Sensors Corporation (ISC) successfully demonstrated the following innovative on-focal-plane functions that allow for correction of detector non-uniformities. Most of the circuit functions demonstrated on this program are finding their way onto future IC's because of their impact on reduced downstream processing, increased focal plane performance, simplified focal plane control, reduced number of dewar connections, as well as the noise immunity of a digital interface dewar. The potential commercial applications for this integrated circuit are primarily in imaging systems. These imaging systems may be used for: security monitoring systems, manufacturing process monitoring, robotics, and for spectral imaging when used in analytical instrumentation.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

A modular cell-based biosensor using engineered genetic logic circuits to detect and integrate multiple environmental signals

PubMed Central

Wang, Baojun; Barahona, Mauricio; Buck, Martin

2013-01-01

Cells perceive a wide variety of cellular and environmental signals, which are often processed combinatorially to generate particular phenotypic responses. Here, we employ both single and mixed cell type populations, pre-programmed with engineered modular cell signalling and sensing circuits, as processing units to detect and integrate multiple environmental signals. Based on an engineered modular genetic AND logic gate, we report the construction of a set of scalable synthetic microbe-based biosensors comprising exchangeable sensory, signal processing and actuation modules. These cellular biosensors were engineered using distinct signalling sensory modules to precisely identify various chemical signals, and combinations thereof, with a quantitative fluorescent output. The genetic logic gate used can function as a biological filter and an amplifier to enhance the sensing selectivity and sensitivity of cell-based biosensors. In particular, an Escherichia coli consortium-based biosensor has been constructed that can detect and integrate three environmental signals (arsenic, mercury and copper ion levels) via either its native two-component signal transduction pathways or synthetic signalling sensors derived from other bacteria in combination with a cell-cell communication module. We demonstrate how a modular cell-based biosensor can be engineered predictably using exchangeable synthetic gene circuit modules to sense and integrate multiple-input signals. This study illustrates some of the key practical design principles required for the future application of these biosensors in broad environmental and healthcare areas. PMID:22981411

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

NASA Technical Reports Server (NTRS)

Young, Paul G.; Romanofsky, Robert R.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.

19 CFR 10.14 - Fabricated components subject to the exemption.

Code of Federal Regulations, 2010 CFR

2010-04-01

... assembled, such as transistors, diodes, integrated circuits, machinery parts, or precut parts of wearing..., or integrated circuit wafers containing individual integrated circuit dice which have been scribed or... resulted in a substantial transformation of the foreign copper ingots. Example 2. An integrated circuit...

Lead sulfide - Silicon MOSFET infrared focal plane development

NASA Technical Reports Server (NTRS)

Barrett, J. R.; Jhabvala, M. D.

1983-01-01

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Operational compatibility of 30-centimeter-diameter ion thruster with integrally regulated solar array power source

NASA Technical Reports Server (NTRS)

Gooder, S. T.

1977-01-01

System tests were performed in which Integrally Regulated Solar Arrays (IRSA's) were used to directly power the beam and accelerator loads of a 30-cm-diameter, electron bombardment, mercury ion thruster. The remaining thruster loads were supplied from conventional power-processing circuits. This combination of IRSA's and conventional circuits formed a hybrid power processor. Thruster performance was evaluated at 3/4- and 1-A beam currents with both the IRSA-hybrid and conventional power processors and was found to be identical for both systems. Power processing is significantly more efficient with the hybrid system. System dynamics and IRSA response to thruster arcs are also examined.

Neuronal Circuitry Mechanisms Regulating Adult Mammalian Neurogenesis

PubMed Central

Song, Juan; Olsen, Reid H.J.; Sun, Jiaqi; Ming, Guo-li; Song, Hongjun

2017-01-01

The adult mammalian brain is a dynamic structure, capable of remodeling in response to various physiological and pathological stimuli. One dramatic example of brain plasticity is the birth and subsequent integration of newborn neurons into the existing circuitry. This process, termed adult neurogenesis, recapitulates neural developmental events in two specialized adult brain regions: the lateral ventricles of the forebrain. Recent studies have begun to delineate how the existing neuronal circuits influence the dynamic process of adult neurogenesis, from activation of quiescent neural stem cells (NSCs) to the integration and survival of newborn neurons. Here, we review recent progress toward understanding the circuit-based regulation of adult neurogenesis in the hippocampus and olfactory bulb. PMID:27143698

Stochastic simulation and robust design optimization of integrated photonic filters

NASA Astrophysics Data System (ADS)

Weng, Tsui-Wei; Melati, Daniele; Melloni, Andrea; Daniel, Luca

2017-01-01

Manufacturing variations are becoming an unavoidable issue in modern fabrication processes; therefore, it is crucial to be able to include stochastic uncertainties in the design phase. In this paper, integrated photonic coupled ring resonator filters are considered as an example of significant interest. The sparsity structure in photonic circuits is exploited to construct a sparse combined generalized polynomial chaos model, which is then used to analyze related statistics and perform robust design optimization. Simulation results show that the optimized circuits are more robust to fabrication process variations and achieve a reduction of 11%-35% in the mean square errors of the 3 dB bandwidth compared to unoptimized nominal designs.

A microarchitecture for resource-limited superscalar microprocessors

NASA Astrophysics Data System (ADS)

Basso, Todd David

1999-11-01

Microelectronic components in space and satellite systems must be resistant to total dose radiation, single-even upset, and latchup in order to accomplish their missions. The demand for inexpensive, high-volume, radiation hardened (rad-hard) integrated circuits (ICs) is expected to increase dramatically as the communication market continues to expand. Motorola's Complementary Gallium Arsenide (CGaAsTM) technology offers superior radiation tolerance compared to traditional CMOS processes, while being more economical than dedicated rad-hard CMOS processes. The goals of this dissertation are to optimize a superscalar microarchitecture suitable for CGaAsTM microprocessors, develop circuit techniques for such applications, and evaluate the potential of CGaAsTM for the development of digital VLSI circuits. Motorola's 0.5 mum CGaAsTM process is summarized and circuit techniques applicable to digital CGaAsTM are developed. Direct coupled FET, complementary, and domino logic circuits are compared based on speed, power, area, and noise margins. These circuit techniques are employed in the design of a 600 MHz PowerPCTM arithmetic logic unit. The dissertation emphasizes CGaASTM-specific design considerations, specifically, low integration level. A baseline superscalar microarchitecture is defined and SPEC95 integer benchmark simulations are used to evaluate the applicability of advanced architectural features to microprocessors having low integration levels. The performance simulations center around the optimization of a simple superscalar core, small-scale branch prediction, instruction prefetching, and an off-chip primary data cache. The simulation results are used to develop a superscalar microarchitecture capable of outperforming a comparable sequential pipeline, while using only 500,000 transistors. The architecture, running at 200 MHz, is capable of achieving an estimated 153 MIPS, translating to a 27% performance increase over a comparable traditional pipelined microprocessor. The proposed microarchitecture is process independent and can be applied to low-cost, or transistor-limited applications. The proposed microarchitecture is implemented in the design of a 0.35 mum CMOS microprocessor, and the design of a 0.5 mum CGaAsTM micro-processor. The two technologies and designs are compared to ascertain the state of CGaAsTM for digital VLSI applications.

A Framework for Robust Multivariable Optimization of Integrated Circuits in Space Applications

NASA Technical Reports Server (NTRS)

DuMonthier, Jeffrey; Suarez, George

2013-01-01

Application Specific Integrated Circuit (ASIC) design for space applications involves multiple challenges of maximizing performance, minimizing power and ensuring reliable operation in extreme environments. This is a complex multidimensional optimization problem which must be solved early in the development cycle of a system due to the time required for testing and qualification severely limiting opportunities to modify and iterate. Manual design techniques which generally involve simulation at one or a small number of corners with a very limited set of simultaneously variable parameters in order to make the problem tractable are inefficient and not guaranteed to achieve the best possible results within the performance envelope defined by the process and environmental requirements. What is required is a means to automate design parameter variation, allow the designer to specify operational constraints and performance goals, and to analyze the results in a way which facilitates identifying the tradeoffs defining the performance envelope over the full set of process and environmental corner cases. The system developed by the Mixed Signal ASIC Group (MSAG) at the Goddard Space Flight Center is implemented as framework of software modules, templates and function libraries. It integrates CAD tools and a mathematical computing environment, and can be customized for new circuit designs with only a modest amount of effort as most common tasks are already encapsulated. Customization is required for simulation test benches to determine performance metrics and for cost function computation. Templates provide a starting point for both while toolbox functions minimize the code required. Once a test bench has been coded to optimize a particular circuit, it is also used to verify the final design. The combination of test bench and cost function can then serve as a template for similar circuits or be re-used to migrate the design to different processes by re-running it with the new process specific device models. The system has been used in the design of time to digital converters for laser ranging and time-of-flight mass spectrometry to optimize analog, mixed signal and digital circuits such as charge sensitive amplifiers, comparators, delay elements, radiation tolerant dual interlocked (DICE) flip-flops and two of three voter gates.

On-chip passive three-port circuit of all-optical ordered-route transmission.

PubMed

Liu, Li; Dong, Jianji; Gao, Dingshan; Zheng, Aoling; Zhang, Xinliang

2015-05-13

On-chip photonic circuits of different specific functions are highly desirable and becoming significant demands in all-optical communication network. Especially, the function to control the transmission directions of the optical signals in integrated circuits is a fundamental research. Previous schemes, such as on-chip optical circulators, are mostly realized by Faraday effect which suffers from material incompatibilities between semiconductors and magneto-optical materials. Achieving highly functional circuits in which light circulates in a particular direction with satisfied performances are still difficult in pure silicon photonics platform. Here, we propose and experimentally demonstrate a three-port passive device supporting optical ordered-route transmission based on silicon thermo-optic effect for the first time. By injecting strong power from only one port, the light could transmit through the three ports in a strict order (1→2, 2→3, 3→1) while be blocked in the opposite order (1→3, 3→2, 2→1). The blocking extinction ratios and operation bandwidths have been investigated in this paper. Moreover, with compact size, economic fabrication process and great extensibility, this proposed photonic integrated circuit is competitive to be applied in on-chip all-optical information processing systems, such as path priority selector.

On-chip passive three-port circuit of all-optical ordered-route transmission

PubMed Central

Liu, Li; Dong, Jianji; Gao, Dingshan; Zheng, Aoling; Zhang, Xinliang

2015-01-01

On-chip photonic circuits of different specific functions are highly desirable and becoming significant demands in all-optical communication network. Especially, the function to control the transmission directions of the optical signals in integrated circuits is a fundamental research. Previous schemes, such as on-chip optical circulators, are mostly realized by Faraday effect which suffers from material incompatibilities between semiconductors and magneto-optical materials. Achieving highly functional circuits in which light circulates in a particular direction with satisfied performances are still difficult in pure silicon photonics platform. Here, we propose and experimentally demonstrate a three-port passive device supporting optical ordered-route transmission based on silicon thermo-optic effect for the first time. By injecting strong power from only one port, the light could transmit through the three ports in a strict order (1→2, 2→3, 3→1) while be blocked in the opposite order (1→3, 3→2, 2→1). The blocking extinction ratios and operation bandwidths have been investigated in this paper. Moreover, with compact size, economic fabrication process and great extensibility, this proposed photonic integrated circuit is competitive to be applied in on-chip all-optical information processing systems, such as path priority selector. PMID:25970855

Stretchable polymer-based electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

2008-02-26

A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

Sensing circuits for multiwire proportional chambers

NASA Technical Reports Server (NTRS)

Peterson, H. T.; Worley, E. R.

1977-01-01

Integrated sensing circuits were designed, fabricated, and packaged for use in determining the direction and fluence of ionizing radiation passing through a multiwire proportional chamber. CMOS on sapphire was selected because of its high speed and low power capabilities. The design of the proposed circuits is described and the results of computer simulations are presented. The fabrication processes for the CMOS on sapphire sensing circuits and hybrid substrates are outlined. Several design options are described and the cost implications of each discussed. To be most effective, each chip should handle not more than 32 inputs, and should be mounted on its own hybrid substrate.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

PubMed

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Solitonic guide and multiphoton absorption processes in photopolymerizable materials for optical integrated circuits

NASA Astrophysics Data System (ADS)

Klein, Stephane; Barsella, Alberto; Acker, D.; Sutter, C.; Beyer, N.; Andraud, Chantal; Fort, Alain F.; Dorkenoo, Kokou D.

2004-09-01

Up to now, most of the optical integrated devices are realized on glass or III-V substrates and the waveguides are usually obtained by photolithography techniques. We present here a new approach based on the use of photopolymerizable compounds. The conditions of self-written channel creation by solitonic propagation inside the bulk of these photopolymerizable formulations are analyzed. Both experimental and theoretical results of the various stages of self-written guide propagation are presented. A further step has been achieved by using a two-photon absorption process for the polymerization via a confocal microscopy technique. Combined with the solitonic guide creation, this technique allows to draw 3D optical circuits. Finally, by doping the photopolymerizable mixtures with push-pull chromophores having a controlled orientation, it will be possible to create active optical integrated devices.

Microphotonic devices for compact planar lightwave circuits and sensor systems

NASA Astrophysics Data System (ADS)

Cardenas Gonzalez, Jaime

2005-07-01

Higher levels of integration in planar lightwave circuits and sensor systems can reduce fabrication costs and broaden viable applications for optical network and sensor systems. For example, increased integration and functionality can lead to sensor systems that are compact enough for easy transport, rugged enough for field applications, and sensitive enough even for laboratory applications. On the other hand, more functional and compact planar lightwave circuits can make optical networks components less expensive for the metro and access markets in urban areas and allow penetration of fiber to the home. Thus, there is an important area of opportunity for increased integration to provide low cost, compact solutions in both network components and sensor systems. In this dissertation, a novel splitting structure for microcantilever deflection detection is introduced. The splitting structure is designed so that its splitting ratio is dependent on the vertical position of the microcantilever. With this structure, microcantilevers sensitized to detect different analytes or biological agents can be integrated into an array on a single chip. Additionally, the integration of a depolarizer into the optoelectronic integrated circuit in an interferometric fiber optic gyroscope is presented as a means for cost reduction. The savings come in avoiding labor intensive fiber pigtailing steps by permitting batch fabrication of these components. In particular, this dissertation focuses on the design of the waveguides and polarization rotator, and the impact of imperfect components on the performance of the depolarizer. In the area of planar lightwave circuits, this dissertation presents the development of a fabrication process for single air interface bends (SAIBs). SAIBs can increase integration by reducing the area necessary to make a waveguide bend. Fabrication and measurement of a 45° SAIB with a bend efficiency of 93.4% for TM polarization and 92.7% for TE polarization are presented.

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems

PubMed Central

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-01-01

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors. PMID:28368355

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems.

PubMed

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-04-03

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors.

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Liangyu, Chen; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

2015-01-01

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

2015-01-01

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

PubMed Central

Maruyama, Satoshi; Hizawa, Takeshi; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-01-01

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction. PMID:29304011

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection.

PubMed

Maruyama, Satoshi; Hizawa, Takeshi; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-01-05

We developed a Fabry-Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction.

Control technology for integrated circuit fabrication at Micro-Circuit Engineering, Incorporated, West Palm Beach, Florida

NASA Astrophysics Data System (ADS)

Mihlan, G. I.; Mitchell, R. I.; Smith, R. K.

1984-07-01

A survey to assess control technology for integrated circuit fabrication was conducted. Engineering controls included local and general exhaust ventilation, shielding, and personal protective equipment. Devices or work stations that contained toxic materials that were potentially dangerous were controlled by local exhaust ventilation. Less hazardous areas were controlled by general exhaust ventilation. Process isolation was used in the plasma etching, low pressure chemical vapor deposition, and metallization operations. Shielding was used in ion implantation units to control X-ray emissions, in contact mask alignes to limit ultraviolet (UV) emissions, and in plasma etching units to control radiofrequency and UV emissions. Most operations were automated. Use of personal protective equipment varied by job function.

Advanced 3-V semiconductor technology assessment

NASA Technical Reports Server (NTRS)

Nowogrodzki, M.

1983-01-01

Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

Fabrication Of High-Tc Superconducting Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Warner, Joseph D.

1992-01-01

Microwave ring resonator fabricated to demonstrate process for fabrication of passive integrated circuits containing high-transition-temperature superconductors. Superconductors increase efficiencies of communication systems, particularly microwave communication systems, by reducing ohmic losses and dispersion of signals. Used to reduce sizes and masses and increase aiming accuracies and tracking speeds of millimeter-wavelength, electronically steerable antennas. High-Tc superconductors preferable for such applications because they operate at higher temperatures than low-Tc superconductors do, therefore, refrigeration systems needed to maintain superconductivity designed smaller and lighter and to consume less power.

Picosecond imaging of signal propagation in integrated circuits

NASA Astrophysics Data System (ADS)

Frohmann, Sven; Dietz, Enrico; Dittrich, Helmar; Hübers, Heinz-Wilhelm

2017-04-01

Optical analysis of integrated circuits (IC) is a powerful tool for analyzing security functions that are implemented in an IC. We present a photon emission microscope for picosecond imaging of hot carrier luminescence in ICs in the near-infrared spectral range from 900 to 1700 nm. It allows for a semi-invasive signal tracking in fully operational ICs on the gate or transistor level with a timing precision of approximately 6 ps. The capabilities of the microscope are demonstrated by imaging the operation of two ICs made by 180 and 60 nm process technology.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Polypyrrole Porous Micro Humidity Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang; Lu, De-Hao

2010-01-01

This study presents the design and fabrication of a capacitive micro humidity sensor integrated with a five-stage ring oscillator circuit on chip using the complimentary metal oxide semiconductor (CMOS) process. The area of the humidity sensor chip is about 1 mm2. The humidity sensor consists of a sensing capacitor and a sensing film. The sensing capacitor is constructed from spiral interdigital electrodes that can enhance the sensitivity of the sensor. The sensing film of the sensor is polypyrrole, which is prepared by the chemical polymerization method, and the film has a porous structure. The sensor needs a post-CMOS process to coat the sensing film. The post-CMOS process uses a wet etching to etch the sacrificial layers, and then the polypyrrole is coated on the sensing capacitor. The sensor generates a change in capacitance when the sensing film absorbs or desorbs vapor. The ring oscillator circuit converts the capacitance variation of the sensor into the oscillation frequency output. Experimental results show that the sensitivity of the humidity sensor is about 99 kHz/%RH at 25 °C. PMID:22163459

Polypyrrole porous micro humidity sensor integrated with a ring oscillator circuit on chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Lu, De-Hao

2010-01-01

This study presents the design and fabrication of a capacitive micro humidity sensor integrated with a five-stage ring oscillator circuit on chip using the complimentary metal oxide semiconductor (CMOS) process. The area of the humidity sensor chip is about 1 mm(2). The humidity sensor consists of a sensing capacitor and a sensing film. The sensing capacitor is constructed from spiral interdigital electrodes that can enhance the sensitivity of the sensor. The sensing film of the sensor is polypyrrole, which is prepared by the chemical polymerization method, and the film has a porous structure. The sensor needs a post-CMOS process to coat the sensing film. The post-CMOS process uses a wet etching to etch the sacrificial layers, and then the polypyrrole is coated on the sensing capacitor. The sensor generates a change in capacitance when the sensing film absorbs or desorbs vapor. The ring oscillator circuit converts the capacitance variation of the sensor into the oscillation frequency output. Experimental results show that the sensitivity of the humidity sensor is about 99 kHz/%RH at 25 °C.

Electronic circuits and systems: A compilation. [including integrated circuits, logic circuits, varactor diode circuits, low pass filters, and optical equipment circuits

NASA Technical Reports Server (NTRS)

1975-01-01

Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays.

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

NASA Astrophysics Data System (ADS)

Vidor, Fábio F.; Meyers, Thorsten; Müller, Kathrin; Wirth, Gilson I.; Hilleringmann, Ulrich

2017-11-01

Driven by the Internet of Things (IoT), flexible and transparent smart systems have been intensively researched by the scientific community and by several companies. This technology is already available for consumers in a wide range of innovative products, e.g., flexible displays, radio-frequency identification tags and wearable electronic skins which, for instance, collect and analyze data for medical applications. For these systems, thin-film transistors (TFTs) are the key elements responsible for the driving currents. Solution-based materials such as nanoparticle dispersions avail the fabrication on large-area substrates with high throughput processes. In this study, we discuss the integration of ZnO nanoparticle thin-film transistors and inverter circuits on freestanding polymeric substrates enclosing the main issues concerning the transfer of the integration process from a rigid substrate to a flexible one. The TFTs depict VON between -0.2 and 1 V, ION/IOFF > 104 and field-effect mobility >0.5 cm2 V-1 s-1. Additionally, in order to enhance the transistors and inverters performance, an adaptation on the device configuration, from an inverted coplanar to an inverted staggered setup, was conducted and analyzed. By employing the inverted staggered setup a considerable increase in the contact quality between the semiconductor and the drain and source electrodes was observed. As the integrated devices depict electrical characteristics which enable the fabrication of electronic circuits for the low-cost sector, inverters were fabricated and characterized, evaluating the circuit's gain as function of the applied supply voltage and circuit's geometric ratio.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Automatic visual inspection system for microelectronics

NASA Technical Reports Server (NTRS)

Micka, E. Z. (Inventor)

1975-01-01

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Design structure for in-system redundant array repair in integrated circuits

DOEpatents

Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Quellette, Michael R.; Strissel, Scott A.

2008-11-25

A design structure for repairing an integrated circuit during operation of the integrated circuit. The integrated circuit comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The design structure provides the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The design structure further passes the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

Temporal integration and 1/f power scaling in a circuit model of cerebellar interneurons.

PubMed

Maex, Reinoud; Gutkin, Boris

2017-07-01

Inhibitory interneurons interconnected via electrical and chemical (GABA A receptor) synapses form extensive circuits in several brain regions. They are thought to be involved in timing and synchronization through fast feedforward control of principal neurons. Theoretical studies have shown, however, that whereas self-inhibition does indeed reduce response duration, lateral inhibition, in contrast, may generate slow response components through a process of gradual disinhibition. Here we simulated a circuit of interneurons (stellate and basket cells) of the molecular layer of the cerebellar cortex and observed circuit time constants that could rise, depending on parameter values, to >1 s. The integration time scaled both with the strength of inhibition, vanishing completely when inhibition was blocked, and with the average connection distance, which determined the balance between lateral and self-inhibition. Electrical synapses could further enhance the integration time by limiting heterogeneity among the interneurons and by introducing a slow capacitive current. The model can explain several observations, such as the slow time course of OFF-beam inhibition, the phase lag of interneurons during vestibular rotation, or the phase lead of Purkinje cells. Interestingly, the interneuron spike trains displayed power that scaled approximately as 1/ f at low frequencies. In conclusion, stellate and basket cells in cerebellar cortex, and interneuron circuits in general, may not only provide fast inhibition to principal cells but also act as temporal integrators that build a very short-term memory. NEW & NOTEWORTHY The most common function attributed to inhibitory interneurons is feedforward control of principal neurons. In many brain regions, however, the interneurons are densely interconnected via both chemical and electrical synapses but the function of this coupling is largely unknown. Based on large-scale simulations of an interneuron circuit of cerebellar cortex, we propose that this coupling enhances the integration time constant, and hence the memory trace, of the circuit. Copyright © 2017 the American Physiological Society.

Materials-Process Interactions in Ternary Alloy Semiconductors.

DTIC Science & Technology

1984-08-01

high, the surface potential can be * modulated . PECVD SiO. appears to be a viable candidate as a gate dielectric for * Irf ,fO-4A)s MISFETs...it is desirable to integrate the detectors with circuits capable of performing signal processing functions. These circuits can either be fabricated in...to be a major problem in In0. 5 3Ga 0.* 47 s. 25 S. . . . . 13821 -1 R I (a) CROSS SECTION KEYBOARD 210M ANNEALING CHAMBER GATE TRIGG TRIAC

Energy-efficient STDP-based learning circuits with memristor synapses

NASA Astrophysics Data System (ADS)

Wu, Xinyu; Saxena, Vishal; Campbell, Kristy A.

2014-05-01

It is now accepted that the traditional von Neumann architecture, with processor and memory separation, is ill suited to process parallel data streams which a mammalian brain can efficiently handle. Moreover, researchers now envision computing architectures which enable cognitive processing of massive amounts of data by identifying spatio-temporal relationships in real-time and solving complex pattern recognition problems. Memristor cross-point arrays, integrated with standard CMOS technology, are expected to result in massively parallel and low-power Neuromorphic computing architectures. Recently, significant progress has been made in spiking neural networks (SNN) which emulate data processing in the cortical brain. These architectures comprise of a dense network of neurons and the synapses formed between the axons and dendrites. Further, unsupervised or supervised competitive learning schemes are being investigated for global training of the network. In contrast to a software implementation, hardware realization of these networks requires massive circuit overhead for addressing and individually updating network weights. Instead, we employ bio-inspired learning rules such as the spike-timing-dependent plasticity (STDP) to efficiently update the network weights locally. To realize SNNs on a chip, we propose to use densely integrating mixed-signal integrate-andfire neurons (IFNs) and cross-point arrays of memristors in back-end-of-the-line (BEOL) of CMOS chips. Novel IFN circuits have been designed to drive memristive synapses in parallel while maintaining overall power efficiency (<1 pJ/spike/synapse), even at spike rate greater than 10 MHz. We present circuit design details and simulation results of the IFN with memristor synapses, its response to incoming spike trains and STDP learning characterization.

Temporal coding in a silicon network of integrate-and-fire neurons.

PubMed

Liu, Shih-Chii; Douglas, Rodney

2004-09-01

Spatio-temporal processing of spike trains by neuronal networks depends on a variety of mechanisms distributed across synapses, dendrites, and somata. In natural systems, the spike trains and the processing mechanisms cohere though their common physical instantiation. This coherence is lost when the natural system is encoded for simulation on a general purpose computer. By contrast, analog VLSI circuits are, like neurons, inherently related by their real-time physics, and so, could provide a useful substrate for exploring neuronlike event-based processing. Here, we describe a hybrid analog-digital VLSI chip comprising a set of integrate-and-fire neurons and short-term dynamical synapses that can be configured into simple network architectures with some properties of neocortical neuronal circuits. We show that, despite considerable fabrication variance in the properties of individual neurons, the chip offers a viable substrate for exploring real-time spike-based processing in networks of neurons.

Fabrication of Circuit QED Quantum Processors, Part 2: Advanced Semiconductor Manufacturing Perspectives

NASA Astrophysics Data System (ADS)

Michalak, D. J.; Bruno, A.; Caudillo, R.; Elsherbini, A. A.; Falcon, J. A.; Nam, Y. S.; Poletto, S.; Roberts, J.; Thomas, N. K.; Yoscovits, Z. R.; Dicarlo, L.; Clarke, J. S.

Experimental quantum computing is rapidly approaching the integration of sufficient numbers of quantum bits for interesting applications, but many challenges still remain. These challenges include: realization of an extensible design for large array scale up, sufficient material process control, and discovery of integration schemes compatible with industrial 300 mm fabrication. We present recent developments in extensible circuits with vertical delivery. Toward the goal of developing a high-volume manufacturing process, we will present recent results on a new Josephson junction process that is compatible with current tooling. We will then present the improvements in NbTiN material uniformity that typical 300 mm fabrication tooling can provide. While initial results on few-qubit systems are encouraging, advanced processing control is expected to deliver the improvements in qubit uniformity, coherence time, and control required for larger systems. Research funded by Intel Corporation.

The integrated design and archive of space-borne signal processing and compression coding

NASA Astrophysics Data System (ADS)

He, Qiang-min; Su, Hao-hang; Wu, Wen-bo

2017-10-01

With the increasing demand of users for the extraction of remote sensing image information, it is very urgent to significantly enhance the whole system's imaging quality and imaging ability by using the integrated design to achieve its compact structure, light quality and higher attitude maneuver ability. At this present stage, the remote sensing camera's video signal processing unit and image compression and coding unit are distributed in different devices. The volume, weight and consumption of these two units is relatively large, which unable to meet the requirements of the high mobility remote sensing camera. This paper according to the high mobility remote sensing camera's technical requirements, designs a kind of space-borne integrated signal processing and compression circuit by researching a variety of technologies, such as the high speed and high density analog-digital mixed PCB design, the embedded DSP technology and the image compression technology based on the special-purpose chips. This circuit lays a solid foundation for the research of the high mobility remote sensing camera.

Optical Computers and Space Technology

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin A.; Frazier, Donald O.; Penn, Benjamin; Paley, Mark S.; Witherow, William K.; Banks, Curtis; Hicks, Rosilen; Shields, Angela

1995-01-01

The rapidly increasing demand for greater speed and efficiency on the information superhighway requires significant improvements over conventional electronic logic circuits. Optical interconnections and optical integrated circuits are strong candidates to provide the way out of the extreme limitations imposed on the growth of speed and complexity of nowadays computations by the conventional electronic logic circuits. The new optical technology has increased the demand for high quality optical materials. NASA's recent involvement in processing optical materials in space has demonstrated that a new and unique class of high quality optical materials are processible in a microgravity environment. Microgravity processing can induce improved orders in these materials and could have a significant impact on the development of optical computers. We will discuss NASA's role in processing these materials and report on some of the associated nonlinear optical properties which are quite useful for optical computers technology.

A large-scale circuit mechanism for hierarchical dynamical processing in the primate cortex

PubMed Central

Chaudhuri, Rishidev; Knoblauch, Kenneth; Gariel, Marie-Alice; Kennedy, Henry; Wang, Xiao-Jing

2015-01-01

We developed a large-scale dynamical model of the macaque neocortex, which is based on recently acquired directed- and weighted-connectivity data from tract-tracing experiments, and which incorporates heterogeneity across areas. A hierarchy of timescales naturally emerges from this system: sensory areas show brief, transient responses to input (appropriate for sensory processing), whereas association areas integrate inputs over time and exhibit persistent activity (suitable for decision-making and working memory). The model displays multiple temporal hierarchies, as evidenced by contrasting responses to visual versus somatosensory stimulation. Moreover, slower prefrontal and temporal areas have a disproportionate impact on global brain dynamics. These findings establish a circuit mechanism for “temporal receptive windows” that are progressively enlarged along the cortical hierarchy, suggest an extension of time integration in decision-making from local to large circuits, and should prompt a re-evaluation of the analysis of functional connectivity (measured by fMRI or EEG/MEG) by taking into account inter-areal heterogeneity. PMID:26439530

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver.

PubMed

Xu, J; Bhattacharya, P; Váró, G

2004-03-15

The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.

Respiration detection chip with integrated temperature-insensitive MEMS sensors and CMOS signal processing circuits.

PubMed

Wei, Chia-Ling; Lin, Yu-Chen; Chen, Tse-An; Lin, Ren-Yi; Liu, Tin-Hao

2015-02-01

An airflow sensing chip, which integrates MEMS sensors with their CMOS signal processing circuits into a single chip, is proposed for respiration detection. Three micro-cantilever-based airflow sensors were designed and fabricated using a 0.35 μm CMOS/MEMS 2P4M mixed-signal polycide process. Two main differences were present among these three designs: they were either metal-covered or metal-free structures, and had either bridge-type or fixed-type reference resistors. The performances of these sensors were measured and compared, including temperature sensitivity and airflow sensitivity. Based on the measured results, the metal-free structure with fixed-type reference resistors is recommended for use, because it has the highest airflow sensitivity and also can effectively reduce the output voltage drift caused by temperature change.

Microchannel cooling of face down bonded chips

DOEpatents

Bernhardt, Anthony F.

1993-01-01

Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multichip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

Microchannel cooling of face down bonded chips

DOEpatents

Bernhardt, A.F.

1993-06-08

Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multi chip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

Oscillatory integration windows in neurons

PubMed Central

Gupta, Nitin; Singh, Swikriti Saran; Stopfer, Mark

2016-01-01

Oscillatory synchrony among neurons occurs in many species and brain areas, and has been proposed to help neural circuits process information. One hypothesis states that oscillatory input creates cyclic integration windows: specific times in each oscillatory cycle when postsynaptic neurons become especially responsive to inputs. With paired local field potential (LFP) and intracellular recordings and controlled stimulus manipulations we directly test this idea in the locust olfactory system. We find that inputs arriving in Kenyon cells (KCs) sum most effectively in a preferred window of the oscillation cycle. With a computational model, we show that the non-uniform structure of noise in the membrane potential helps mediate this process. Further experiments performed in vivo demonstrate that integration windows can form in the absence of inhibition and at a broad range of oscillation frequencies. Our results reveal how a fundamental coincidence-detection mechanism in a neural circuit functions to decode temporally organized spiking. PMID:27976720

A Point-process Response Model for Spike Trains from Single Neurons in Neural Circuits under Optogenetic Stimulation

PubMed Central

Luo, X.; Gee, S.; Sohal, V.; Small, D.

2015-01-01

Optogenetics is a new tool to study neuronal circuits that have been genetically modified to allow stimulation by flashes of light. We study recordings from single neurons within neural circuits under optogenetic stimulation. The data from these experiments present a statistical challenge of modeling a high frequency point process (neuronal spikes) while the input is another high frequency point process (light flashes). We further develop a generalized linear model approach to model the relationships between two point processes, employing additive point-process response functions. The resulting model, Point-process Responses for Optogenetics (PRO), provides explicit nonlinear transformations to link the input point process with the output one. Such response functions may provide important and interpretable scientific insights into the properties of the biophysical process that governs neural spiking in response to optogenetic stimulation. We validate and compare the PRO model using a real dataset and simulations, and our model yields a superior area-under-the- curve value as high as 93% for predicting every future spike. For our experiment on the recurrent layer V circuit in the prefrontal cortex, the PRO model provides evidence that neurons integrate their inputs in a sophisticated manner. Another use of the model is that it enables understanding how neural circuits are altered under various disease conditions and/or experimental conditions by comparing the PRO parameters. PMID:26411923

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

NASA Technical Reports Server (NTRS)

Brain, R. A.; Atwater, H. A.; Watson, T. J.; Barmatz, M.

1994-01-01

A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.

High-Voltage-Input Level Translator Using Standard CMOS

NASA Technical Reports Server (NTRS)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors, which, by virtue of being identical to the input transistors, would reproduce the input differential potential at the output

Erbium-doped zinc-oxide waveguide amplifiers for hybrid photonic integrated circuits

NASA Astrophysics Data System (ADS)

O'Neal, Lawrence; Anthony, Deion; Bonner, Carl; Geddis, Demetris

2016-02-01

CMOS logic circuits have entered the sub-100nm regime, and research is on-going to investigate the quantum effects that are apparent at this dimension. To avoid some of the constraints imposed by fabrication, entropy, energy, and interference considerations for nano-scale devices, many have begun designing hybrid and/or photonic integrated circuits. These circuits consist of transistors, light emitters, photodetectors, and electrical and optical waveguides. As attenuation is a limiting factor in any communications system, it is advantageous to integrate a signal amplifier. There are numerous examples of electrical amplifiers, but in order to take advantage of the benefits provided by optically integrated systems, optical amplifiers are necessary. The erbium doped fiber amplifier is an example of an optical amplifier which is commercially available now, but the distance between the amplifier and the device benefitting from amplification can be decreased and provide greater functionality by providing local, on-chip amplification. Zinc oxide is an attractive material due to its electrical and optical properties. Its wide bandgap (≍3.4 eV) and high refractive index (≍2) make it an excellent choice for integrated optics systems. Moreover, erbium doped zinc oxide (Er:ZnO) is a suitable candidate for optical waveguide amplifiers because of its compatibility with semiconductor processing technology, 1.54 μm luminescence, transparency, low resistivity, and amplification characteristics. This research presents the characterization of radio frequency magnetron sputtered Er:ZnO, the design and fabrication of integrated waveguide amplifiers, and device analysis.

Topological Properties of Some Integrated Circuits for Very Large Scale Integration Chip Designs

NASA Astrophysics Data System (ADS)

Swanson, S.; Lanzerotti, M.; Vernizzi, G.; Kujawski, J.; Weatherwax, A.

2015-03-01

This talk presents topological properties of integrated circuits for Very Large Scale Integration chip designs. These circuits can be implemented in very large scale integrated circuits, such as those in high performance microprocessors. Prior work considered basic combinational logic functions and produced a mathematical framework based on algebraic topology for integrated circuits composed of logic gates. Prior work also produced an historically-equivalent interpretation of Mr. E. F. Rent's work for today's complex circuitry in modern high performance microprocessors, where a heuristic linear relationship was observed between the number of connections and number of logic gates. This talk will examine topological properties and connectivity of more complex functionally-equivalent integrated circuits. The views expressed in this article are those of the author and do not reflect the official policy or position of the United States Air Force, Department of Defense or the U.S. Government.

Arrays of Carbon Nanotubes as RF Filters in Waveguides

NASA Technical Reports Server (NTRS)

Hoppe, Daniel; Hunt, Brian; Hoenk, Michael; Noca, Flavio; Xu, Jimmy

2003-01-01

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

50 Years of ``Scaling'' Jack Kilby's Invention

NASA Astrophysics Data System (ADS)

Doering, Robert

2008-03-01

This year is the 50th anniversary of Jack Kilby's 1958 invention of the integrated circuit (IC), for which he won the 2000 Nobel Prize in Physics. Since that invention in a laboratory at Texas Instruments, IC components have been continuously miniaturized, which has resulted in exponential improvement trends in their performance, energy efficiency, and cost per function. These improvements have created a semiconductor industry that has grown to over 250B in annual sales. The process of reducing integrated-circuit component size and associated parameters in a coordinated fashion is traditionally called ``feature-size scaling.'' Kilby's original circuit had active (transistor) and passive (resistor, capacitor) components with dimensions of a few millimeters. Today, the minimum feature sizes on integrated circuits are less than 30 nanometers for patterned line widths and down to about one nanometer for film thicknesses. Thus, we have achieved about five orders of magnitude in linear-dimension scaling over the past fifty years, which has resulted in about ten orders of magnitude increase in the density of IC components, a representation of ``Moore's Law.'' As IC features are approaching atomic dimensions, increasing emphasis is now being given to the parallel effort of further diversifying the types of components in integrated circuits. This is called ``functional scaling'' and ``more then Moore.'' Of course, the enablers for both types of scaling have been developed at many laboratories around the world. This talk will review a few of the highlights in scaling and its applications from R&D projects at Texas Instruments.

The research of PSD location method in micro laser welding fields

NASA Astrophysics Data System (ADS)

Zhang, Qiue; Zhang, Rong; Dong, Hua

2010-11-01

In the field of micro laser welding, besides the special requirement in the parameter of lasers, the locating in welding points accurately is very important. The article adopt position sensitive detector (PSD) as hard core, combine optic system, electric circuits and PC and software processing, confirm the location of welding points. The signal detection circuits adopt the special integrate circuit H-2476 to process weak signal. It is an integrated circuit for high-speed, high-sensitivity optical range finding, which has stronger noiseproof feature, combine digital filter arithmetic, carry out repair the any non-ideal factors, increasing the measure precision. The amplifier adopt programmable amplifier LTC6915. The system adapt two dimension stepping motor drive the workbench, computer and corresponding software processing, make sure the location of spot weld. According to different workpieces to design the clamps. The system on-line detect PSD 's output signal in the moving processing. At the workbench moves in the X direction, the filaments offset is detected dynamic. Analyze the X axes moving sampling signal direction could be estimate the Y axes moving direction, and regulate the Y axes moving values. The workbench driver adopt A3979, it is a stepping motor driver with insert transducer and operate easily. It adapts the requirement of location in micro laser welding fields, real-time control to adjust by computer. It can be content up 20 μm's laser micro welding requirement on the whole. Using laser powder cladding technology achieve inter-penetration welding of high quality and reliability.

An investigation for the development of an integrated optical data preprocessor

NASA Technical Reports Server (NTRS)

Verber, C. M.; Vahey, D. W.; Kenan, R. P.; Wood, V. E.; Hartman, N. F.; Chapman, C. M.

1978-01-01

The successful fabrication and demonstration of an integrated optical circuit designed to perform a parallel processing operation by utilizing holographic subtraction to simultaneously compare N analog signal voltages with N predetermined reference voltages is summarized. The device alleviates transmission, storage and processing loads of satellite data systems by performing, at the sensor site, some preprocessing of data taken by remote sensors. Major accomplishments in the fabrication of integrated optics components include: (1) fabrication of the first LiNbO3 waveguide geodesic lens; (2) development of techniques for polishing TIR mirrors on LiNbO3 waveguides; (3) fabrication of high efficiency metal-over-photoresist gratings for waveguide beam splitters; (4) demonstration of high S/N holographic subtraction using waveguide holograms; and (5) development of alignment techniques for fabrication of integrated optics circuits. Important developments made in integrated optics are the discovery and suggested use of holographic self-subtraction in LiNbO3, development of a mathematical description of the operating modes of the preprocessor, and the development of theories for diffraction efficiency and beam quality of two dimensional beam defined gratings.

Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)

NASA Technical Reports Server (NTRS)

Fan, Mark S.; Christou, Aris; Pecht, Michael G.

1992-01-01

Numerical simulations of the two-dimensional temperature distributions for a typical GaAs MMIC circuit are conducted, aiming at understanding the heat conduction process of the circuit chip and providing temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature.

System for RFID-Enabled Information Collection

NASA Technical Reports Server (NTRS)

Kennedy, Timothy F. (Inventor); Fink, Patrick W. (Inventor); Lin, Gregory Y. (Inventor); Ngo, Phong H. (Inventor)

2017-01-01

A sensor and system provide for radio frequency identification (RFID)-enabled information collection. The sensor includes a ring-shaped element and an antenna. The ring-shaped element includes a conductive ring and an RFID integrated circuit. The antenna is spaced apart from the ring-shaped element and defines an electrically-conductive path commensurate in size and shape to at least a portion of the conductive ring. The system may include an interrogator for energizing the ring-shaped element and receiving a data transmission from the RFID integrated circuit that has been energized for further processing by a processor.

Petri-net-based 2D design of DNA walker circuits.

PubMed

Gilbert, David; Heiner, Monika; Rohr, Christian

2018-01-01

We consider localised DNA computation, where a DNA strand walks along a binary decision graph to compute a binary function. One of the challenges for the design of reliable walker circuits consists in leakage transitions, which occur when a walker jumps into another branch of the decision graph. We automatically identify leakage transitions, which allows for a detailed qualitative and quantitative assessment of circuit designs, design comparison, and design optimisation. The ability to identify leakage transitions is an important step in the process of optimising DNA circuit layouts where the aim is to minimise the computational error inherent in a circuit while minimising the area of the circuit. Our 2D modelling approach of DNA walker circuits relies on coloured stochastic Petri nets which enable functionality, topology and dimensionality all to be integrated in one two-dimensional model. Our modelling and analysis approach can be easily extended to 3-dimensional walker systems.

Electro-optical Probing Of Terahertz Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Romanofsky, R.; Whitaker, J. F.; Valdmanis, J. A.; Mourou, G.; Jackson, T. A.

1990-01-01

Electro-optical probe developed to perform noncontact, nondestructive, and relatively noninvasive measurements of electric fields over broad spectrum at millimeter and shorter wavelengths in integrated circuits. Manipulated with conventional intregrated-circuit-wafer-probing equipment and operated without any special preparation of integrated circuits. Tip of probe small electro-optical crystal serving as proximity electric-field sensor.

Monolithic Microwave Integrated Circuits Based on GaAs Mesfet Technology

NASA Astrophysics Data System (ADS)

Bahl, Inder J.

Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multifunction integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.

Wide-band polarization controller for Si photonic integrated circuits.

PubMed

Velha, P; Sorianello, V; Preite, M V; De Angelis, G; Cassese, T; Bianchi, A; Testa, F; Romagnoli, M

2016-12-15

A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.

Improved process for epitaxial deposition of silicon on prediffused substrates

NASA Technical Reports Server (NTRS)

Clarke, M. G.; Halsor, J. L.; Word, J. C.

1968-01-01

Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

General technique for the integration of MIC/MMIC'S with waveguides

NASA Technical Reports Server (NTRS)

Geller, Bernard D. (Inventor); Zaghloul, Amir I. (Inventor)

1987-01-01

A technique for packaging and integrating of a microwave integrated circuit (MIC) or monolithic microwave integrated circuit (MMIC) with a waveguide uses a printed conductive circuit pattern on a dielectric substrate to transform impedance and mode of propagation between the MIC/MMIC and the waveguide. The virtually coplanar circuit pattern lies on an equipotential surface within the waveguide and therefore makes possible single or dual polarized mode structures.

Large Scale Integrated Circuits for Military Applications.

DTIC Science & Technology

1977-05-01

economic incentive for riarrowing this gap is examined, y (U)^wo"categories of cost are analyzed: the direct life cycle cost of the integrated circuit...dependence of these costs on the physical charac- teristics of the integrated circuits is discussed. (U) The economic and physical characteristics of... economic incentive for narrowing this gap is examined. Two categories of cost are analyzed: the direct life cycle cost of the integrated circuit

A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array—Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique

PubMed Central

Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue

2017-01-01

With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array—application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384. PMID:28672813

A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array-Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique.

PubMed

Yang, Chen; Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue

2017-06-24

With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array-application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.

Flexible circuits with integrated switches for robotic shape sensing

NASA Astrophysics Data System (ADS)

Harnett, C. K.

2016-05-01

Digital switches are commonly used for detecting surface contact and limb-position limits in robotics. The typical momentary-contact digital switch is a mechanical device made from metal springs, designed to connect with a rigid printed circuit board (PCB). However, flexible printed circuits are taking over from the rigid PCB in robotics because the circuits can bend while carrying signals and power through moving joints. This project is motivated by a previous work where an array of surface-mount momentary contact switches on a flexible circuit acted as an all-digital shape sensor compatible with the power resources of energy harvesting systems. Without a rigid segment, the smallest commercially-available surface-mount switches would detach from the flexible circuit after several bending cycles, sometimes violently. This report describes a low-cost, conductive fiber based method to integrate electromechanical switches into flexible circuits and other soft, bendable materials. Because the switches are digital (on/off), they differ from commercially-available continuous-valued bend/flex sensors. No amplification or analog-to-digital conversion is needed to read the signal, but the tradeoff is that the digital switches only give a threshold curvature value. Boundary conditions on the edges of the flexible circuit are key to setting the threshold curvature value for switching. This presentation will discuss threshold-setting, size scaling of the design, automation for inserting a digital switch into the flexible circuit fabrication process, and methods for reconstructing a shape from an array of digital switch states.

A closed-loop compressive-sensing-based neural recording system.

PubMed

Zhang, Jie; Mitra, Srinjoy; Suo, Yuanming; Cheng, Andrew; Xiong, Tao; Michon, Frederic; Welkenhuysen, Marleen; Kloosterman, Fabian; Chin, Peter S; Hsiao, Steven; Tran, Trac D; Yazicioglu, Firat; Etienne-Cummings, Ralph

2015-06-01

This paper describes a low power closed-loop compressive sensing (CS) based neural recording system. This system provides an efficient method to reduce data transmission bandwidth for implantable neural recording devices. By doing so, this technique reduces a majority of system power consumption which is dissipated at data readout interface. The design of the system is scalable and is a viable option for large scale integration of electrodes or recording sites onto a single device. The entire system consists of an application-specific integrated circuit (ASIC) with 4 recording readout channels with CS circuits, a real time off-chip CS recovery block and a recovery quality evaluation block that provides a closed feedback to adaptively adjust compression rate. Since CS performance is strongly signal dependent, the ASIC has been tested in vivo and with standard public neural databases. Implemented using efficient digital circuit, this system is able to achieve >10 times data compression on the entire neural spike band (500-6KHz) while consuming only 0.83uW (0.53 V voltage supply) additional digital power per electrode. When only the spikes are desired, the system is able to further compress the detected spikes by around 16 times. Unlike other similar systems, the characteristic spikes and inter-spike data can both be recovered which guarantes a >95% spike classification success rate. The compression circuit occupied 0.11mm(2)/electrode in a 180nm CMOS process. The complete signal processing circuit consumes <16uW/electrode. Power and area efficiency demonstrated by the system make it an ideal candidate for integration into large recording arrays containing thousands of electrode. Closed-loop recording and reconstruction performance evaluation further improves the robustness of the compression method, thus making the system more practical for long term recording.

InP-based three-dimensional photonic integrated circuits

NASA Astrophysics Data System (ADS)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

High accuracy digital aging monitor based on PLL-VCO circuit

NASA Astrophysics Data System (ADS)

Yuejun, Zhang; Zhidi, Jiang; Pengjun, Wang; Xuelong, Zhang

2015-01-01

As the manufacturing process is scaled down to the nanoscale, the aging phenomenon significantly affects the reliability and lifetime of integrated circuits. Consequently, the precise measurement of digital CMOS aging is a key aspect of nanoscale aging tolerant circuit design. This paper proposes a high accuracy digital aging monitor using phase-locked loop and voltage-controlled oscillator (PLL-VCO) circuit. The proposed monitor eliminates the circuit self-aging effect for the characteristic of PLL, whose frequency has no relationship with circuit aging phenomenon. The PLL-VCO monitor is implemented in TSMC low power 65 nm CMOS technology, and its area occupies 303.28 × 298.94 μm2. After accelerating aging tests, the experimental results show that PLL-VCO monitor improves accuracy about high temperature by 2.4% and high voltage by 18.7%.

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

NASA Astrophysics Data System (ADS)

Kawamoto, Kazunori; Mizuno, Shoji; Abe, Hirofumi; Higuchi, Yasushi; Ishihara, Hideaki; Fukumoto, Harutsugu; Watanabe, Takamoto; Fujino, Seiji; Shirakawa, Isao

2001-04-01

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

Integrated circuits, and design and manufacture thereof

DOEpatents

Auracher, Stefan; Pribbernow, Claus; Hils, Andreas

2006-04-18

A representation of a macro for an integrated circuit layout. The representation may define sub-circuit cells of a module. The module may have a predefined functionality. The sub-circuit cells may include at least one reusable circuit cell. The reusable circuit cell may be configured such that when the predefined functionality of the module is not used, the reusable circuit cell is available for re-use.

Functional Interactions between Newborn and Mature Neurons Leading to Integration into Established Neuronal Circuits.

PubMed

Boulanger-Weill, Jonathan; Candat, Virginie; Jouary, Adrien; Romano, Sebastián A; Pérez-Schuster, Verónica; Sumbre, Germán

2017-06-19

From development up to adulthood, the vertebrate brain is continuously supplied with newborn neurons that integrate into established mature circuits. However, how this process is coordinated during development remains unclear. Using two-photon imaging, GCaMP5 transgenic zebrafish larvae, and sparse electroporation in the larva's optic tectum, we monitored spontaneous and induced activity of large neuronal populations containing newborn and functionally mature neurons. We observed that the maturation of newborn neurons is a 4-day process. Initially, newborn neurons showed undeveloped dendritic arbors, no neurotransmitter identity, and were unresponsive to visual stimulation, although they displayed spontaneous calcium transients. Later on, newborn-labeled neurons began to respond to visual stimuli but in a very variable manner. At the end of the maturation period, newborn-labeled neurons exhibited visual tuning curves (spatial receptive fields and direction selectivity) and spontaneous correlated activity with neighboring functionally mature neurons. At this developmental stage, newborn-labeled neurons presented complex dendritic arbors and neurotransmitter identity (excitatory or inhibitory). Removal of retinal inputs significantly perturbed the integration of newborn neurons into the functionally mature tectal network. Our results provide a comprehensive description of the maturation of newborn neurons during development and shed light on potential mechanisms underlying their integration into a functionally mature neuronal circuit. Copyright © 2017 The Author(s). Published by Elsevier Ltd.. All rights reserved.

Multipurpose silicon photonics signal processor core.

PubMed

Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

2017-09-21

Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

A Course on Plasma Processing in Integrated Circuit Fabrication.

ERIC Educational Resources Information Center

Sawin, Herbert H.; Reif, Rafael

1983-01-01

Describes a course, taught jointly by electrical/chemical engineering departments at the Massachusetts Institute of Technology, designed to teach the fundamental science of plasma processing as well as to give an overview of the present state of industrial processes. Provides rationale for course development, texts used, class composition, and…

Self-Patterning of Silica/Epoxy Nanocomposite Underfill by Tailored Hydrophilic-Superhydrophobic Surfaces for 3D Integrated Circuit (IC) Stacking.

PubMed

Tuan, Chia-Chi; James, Nathan Pataki; Lin, Ziyin; Chen, Yun; Liu, Yan; Moon, Kyoung-Sik; Li, Zhuo; Wong, C P

2017-03-15

As microelectronics are trending toward smaller packages and integrated circuit (IC) stacks nowadays, underfill, the polymer composite filled in between the IC chip and the substrate, becomes increasingly important for interconnection reliability. However, traditional underfills cannot meet the requirements for low-profile and fine pitch in high density IC stacking packages. Post-applied underfills have difficulties in flowing into the small gaps between the chip and the substrate, while pre-applied underfills face filler entrapment at bond pads. In this report, we present a self-patterning underfilling technology that uses selective wetting of underfill on Cu bond pads and Si 3 N 4 passivation via surface energy engineering. This novel process, fully compatible with the conventional underfilling process, eliminates the issue of filler entrapment in typical pre-applied underfilling process, enabling high density and fine pitch IC die bonding.

Engineering integrated photonics for heralded quantum gates

NASA Astrophysics Data System (ADS)

Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

2016-06-01

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

Characteristics of High-Resolution Hemoglobin Measurement Microchip Integrated with Signal Processing Circuit

NASA Astrophysics Data System (ADS)

Noda, Toshihiko; Takao, Hidekuni; Ashiki, Mitsuaki; Ebi, Hiroyuki; Sawada, Kazuaki; Ishida, Makoto

2004-04-01

In this study, a microchip for measurement of hemoglobin in human blood has been proposed, fabricated and evaluated. The measurement principle of hemoglobin is based on the “cyanmethemoglobin method” that calculates the cyanmethemoglobin concentration by absorption photometry. A glass/silicon/silicon structure was used for the microchip. The middle silicon layer includes flow channels, and 45° mirrors formed at each end of the flow channels. Photodiodes and metal oxide semiconductor (MOS) integrated circuits were fabricated on the bottom silicon layer. The performance of the microchip for hemoglobin measurement was evaluated using a solution of red food color instead of a real blood sample. The fabricated microchip exhibited a similar performance to a nonminiaturized absorption cell which has the same optical path length. Signal processing output varied with solution concentration from 5.32 V to 5.55 V with very high stability due to differential signal processing.

Surface-micromachined and high-aspect ratio electrostatic actuators for aeronautic and space applications: design and lifetime considerations

NASA Astrophysics Data System (ADS)

Vescovo, P.; Joseph, E.; Bourbon, G.; Le Moal, P.; Minotti, P.; Hibert, C.; Pont, G.

2003-09-01

This paper focuses on recent advances in the field of MEMS-based actuators and distributed microelectromechanical systems (MEMS). IC-processed actuators (e.g. actuators that are machined using integrated circuit batch processes) are expected to open a wide range of industrial applications on the near term. The most promising investigations deal with high-aspect ratio electric field driven microactuators suitable for use in numerous technical fields such as aeronautics and space industry. Because the silicon micromachining technology have the potential to integrate both mechanical components and control circuits within a single process, MEMS-based active control of microscopic and macroscopic structures appears to be one of the most promising challenges for the next decade. As a first step towards new generations of MEMS-based smart structures, recent investigations dealing with silicon mechanisms involving MEMS-based actuators are briefly discussed in this paper.

Engineering integrated photonics for heralded quantum gates

PubMed Central

Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

2016-01-01

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process. PMID:27282928

Engineering integrated photonics for heralded quantum gates.

PubMed

Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

2016-06-10

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

PubMed

Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

2015-04-06

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor.

PubMed

Wang, HongYi; Fan, Youyou; Lu, Zhijian; Luo, Tao; Fu, Houqiang; Song, Hongjiang; Zhao, Yuji; Christen, Jennifer Blain

2017-10-02

This paper provides a solution for a self-powered light direction detection with digitized output. Light direction sensors, energy harvesting photodiodes, real-time adaptive tracking digital output unit and other necessary circuits are integrated on a single chip based on a standard 0.18 µm CMOS process. Light direction sensors proposed have an accuracy of 1.8 degree over a 120 degree range. In order to improve the accuracy, a compensation circuit is presented for photodiodes' forward currents. The actual measurement precision of output is approximately 7 ENOB. Besides that, an adaptive under voltage protection circuit is designed for variable supply power which may undulate with temperature and process.

Reusable vibration resistant integrated circuit mounting socket

DOEpatents

Evans, Craig N.

1995-01-01

This invention discloses a novel form of socket for integrated circuits to be mounted on printed circuit boards. The socket uses a novel contact which is fabricated out of a bimetallic strip with a shape which makes the end of the strip move laterally as temperature changes. The end of the strip forms a barb which digs into an integrated circuit lead at normal temperatures and holds it firmly in the contact, preventing loosening and open circuits from vibration. By cooling the contact containing the bimetallic strip the barb end can be made to release so that the integrated circuit lead can be removed from the socket without damage either to the lead or to the socket components.

Macromodels of digital integrated circuits for program packages of circuit engineering design

NASA Astrophysics Data System (ADS)

Petrenko, A. I.; Sliusar, P. B.; Timchenko, A. P.

1984-04-01

Various aspects of the generation of macromodels of digital integrated circuits are examined, and their effective application in program packages of circuit engineering design is considered. Three levels of macromodels are identified, and the application of such models to the simulation of circuit outputs is discussed.

Gravitational Influences on the Growth of Polydiacetylene Films by Ultraviolet Solution Polymerization

NASA Technical Reports Server (NTRS)

Frazier, Donald O.

2000-01-01

Technically, the field of integrated optics using organic/polymer materials as a new means of information processing, has emerged as of vital importance to optical computers, optical switching, optical communications, the defense industry, etc. The goal is to replace conventional electronic integrated circuits and wires by equivalent miniaturized optical integrated circuits and fibers, offering larger bandwidths, more compactness and reliability, immunity to electromagnetic interference and less cost. From the Code E perspective, this research area represents an opportunity to marry "front-line" education in science and technology with national scientific and technological interests while maximizing human resources utilization. This can be achieved by the development of untapped resources for scientific research - such as minorities, women, and universities traditionally uninvolved in scientific research.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

Integrated coherent matter wave circuits

DOE PAGES

Ryu, C.; Boshier, M. G.

2015-09-21

An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through theirmore » electric polarizability. Moreover, the source of coherent matter waves is a Bose–Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry.« less

Producibility of Vertically Integrated Photodiode (VIP)tm scanning focal plane arrays

NASA Astrophysics Data System (ADS)

Turner, Arthur M.; Teherani, Towfik; Ehmke, John C.; Pettitt, Cindy; Conlon, Peggy; Beck, Jeffrey D.; McCormack, Kent; Colombo, Luigi; Lahutsky, Tom; Murphy, Terry; Williams, Robert L.

1994-07-01

Vertically integrated photodiode, VIPTM, technology is now being used to produce second generation infrared focal plane arrays with high yields and performance. The VIPTM process employs planar, ion implanted, n on p diodes in HgCdTe which is epoxy hybridized directly to the read out integrated circuits on 100 mm Si wafers. The process parameters that are critical for high performance and yield include: HgCdTe dislocation density and thickness, backside passivation, frontside passivation, and junction formation. Producibility of infrared focal plane arrays (IRFPAs) is also significantly enhanced by read out integrated circuits (ROICs) which have the ability to deselect defective pixels. Cold probe screening before lab dewar assembly reduces costs and improves cycle times. The 240 X 1 and 240 X 2 scanning array formats are used to demonstrate the effect of process optimization, deselect, and cold probe screening on yield and cycle time. The versatility of the VIPTM technology and its extension to large area arrays is demonstrated using 240/288 X 4 and 480 X 5 TDI formats. Finally, the high performance of VIPTM IRFPAs is demonstrated by comparing data from a 480 X 5 to the SADA-II specification.

Silicon on insulator achieved using electrochemical etching

DOEpatents

McCarthy, A.M.

1997-10-07

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

Silicon on insulator achieved using electrochemical etching

DOEpatents

McCarthy, Anthony M.

1997-01-01

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

Methods of fabricating applique circuits

DOEpatents

Dimos, Duane B.; Garino, Terry J.

1999-09-14

Applique circuits suitable for advanced packaging applications are introduced. These structures are particularly suited for the simple integration of large amounts (many nanoFarads) of capacitance into conventional integrated circuit and multichip packaging technology. In operation, applique circuits are bonded to the integrated circuit or other appropriate structure at the point where the capacitance is required, thereby minimizing the effects of parasitic coupling. An immediate application is to problems of noise reduction and control in modern high-frequency circuitry.

Addiction: decreased reward sensitivity and increased expectation sensitivity conspire to overwhelm the brain's control circuit.

PubMed

Volkow, Nora D; Wang, Gene-Jack; Fowler, Joanna S; Tomasi, Dardo; Telang, Frank; Baler, Ruben

2010-09-01

Based on brain imaging findings, we present a model according to which addiction emerges as an imbalance in the information processing and integration among various brain circuits and functions. The dysfunctions reflect (a) decreased sensitivity of reward circuits, (b) enhanced sensitivity of memory circuits to conditioned expectations to drugs and drug cues, stress reactivity, and (c) negative mood, and a weakened control circuit. Although initial experimentation with a drug of abuse is largely a voluntary behavior, continued drug use can eventually impair neuronal circuits in the brain that are involved in free will, turning drug use into an automatic compulsive behavior. The ability of addictive drugs to co-opt neurotransmitter signals between neurons (including dopamine, glutamate, and GABA) modifies the function of different neuronal circuits, which begin to falter at different stages of an addiction trajectory. Upon exposure to the drug, drug cues or stress this results in unrestrained hyperactivation of the motivation/drive circuit that results in the compulsive drug intake that characterizes addiction.

Effecting aging time of epoxy molding compound to molding process for integrated circuit packaging

NASA Astrophysics Data System (ADS)

Tachapitunsuk, Jirayu; Ugsornrat, Kessararat; Srisuwitthanon, Warayoot; Thonglor, Panakamon

2017-09-01

This research studied about effecting aging time of epoxy molding compound (EMC) that effect to reliability performance of integrated circuit (IC) package in molding process. Molding process is so important of IC packaging process for protecting IC chip (or die) from temperature and humidity environment using encapsulated EMC. For general molding process, EMC are stored in the frozen at 5°C and left at room temperature at 25 °C for aging time on self before molding of die onto lead frame is 24 hours. The aging time effect to reliability performance of IC package due to different temperature and humidity inside the package. In experiment, aging time of EMC were varied from 0 to 24 hours for molding process of SOIC-8L packages. For analysis, these packages were tested by x-ray and scanning acoustic microscope to analyze properties of EMC with an aging time and also analyzed delamination, internal void, and wire sweep inside the packages with different aging time. The results revealed that different aging time of EMC effect to properties and reliability performance of molding process.

Packaging system with cleaning channel and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Lu

A packaging structure and method for surface mount integrated circuits reduces electrochemical migration (ECM) problems by including one or more cleaning channels to effectively and efficiently remove flux residue that may otherwise remain lodged in gaps between the surface mount package and the printed circuit board. A cleaning channel may be formed along a bottom surface of the surface mount package (i.e., the surface facing the printed circuit board), or along a portion of a top surface of the printed circuit board. In either case, the inclusion of a cleaning channel enlarges the gap between the bottom surface of themore » surface mount package and the printed circuit board and creates a path for contaminants to be flushed out during a cleaning process.« less

Slow Computing Simulation of Bio-plausible Control

DTIC Science & Technology

2012-03-01

information networks, neuromorphic chips would become necessary. Small unstable flying platforms currently require RTK, GPS, or Vicon closed-circuit...Visual, and IR Sensing FPGA ASIC Neuromorphic Chip Simulation Quad Rotor Robotic Insect Uniform Independent Network Single Modality Neural Network... neuromorphic Processing across parallel computational elements =0.54 N u m b e r o f c o m p u ta tio n s - No info 14 integrated circuit

Optimization Methods for Spiking Neurons and Networks

PubMed Central

Russell, Alexander; Orchard, Garrick; Dong, Yi; Mihalaş, Ştefan; Niebur, Ernst; Tapson, Jonathan; Etienne-Cummings, Ralph

2011-01-01

Spiking neurons and spiking neural circuits are finding uses in a multitude of tasks such as robotic locomotion control, neuroprosthetics, visual sensory processing, and audition. The desired neural output is achieved through the use of complex neuron models, or by combining multiple simple neurons into a network. In either case, a means for configuring the neuron or neural circuit is required. Manual manipulation of parameters is both time consuming and non-intuitive due to the nonlinear relationship between parameters and the neuron’s output. The complexity rises even further as the neurons are networked and the systems often become mathematically intractable. In large circuits, the desired behavior and timing of action potential trains may be known but the timing of the individual action potentials is unknown and unimportant, whereas in single neuron systems the timing of individual action potentials is critical. In this paper, we automate the process of finding parameters. To configure a single neuron we derive a maximum likelihood method for configuring a neuron model, specifically the Mihalas–Niebur Neuron. Similarly, to configure neural circuits, we show how we use genetic algorithms (GAs) to configure parameters for a network of simple integrate and fire with adaptation neurons. The GA approach is demonstrated both in software simulation and hardware implementation on a reconfigurable custom very large scale integration chip. PMID:20959265

System-on-Chip Considerations for Heterogeneous Integration of CMOS and Fluidic Bio-Interfaces.

PubMed

Datta-Chaudhuri, Timir; Smela, Elisabeth; Abshire, Pamela A

2016-12-01

CMOS chips are increasingly used for direct sensing and interfacing with fluidic and biological systems. While many biosensing systems have successfully combined CMOS chips for readout and signal processing with passive sensing arrays, systems that co-locate sensing with active circuits on a single chip offer significant advantages in size and performance but increase the complexity of multi-domain design and heterogeneous integration. This emerging class of lab-on-CMOS systems also poses distinct and vexing technical challenges that arise from the disparate requirements of biosensors and integrated circuits (ICs). Modeling these systems must address not only circuit design, but also the behavior of biological components on the surface of the IC and any physical structures. Existing tools do not support the cross-domain simulation of heterogeneous lab-on-CMOS systems, so we recommend a two-step modeling approach: using circuit simulation to inform physics-based simulation, and vice versa. We review the primary lab-on-CMOS implementation challenges and discuss practical approaches to overcome them. Issues include new versions of classical challenges in system-on-chip integration, such as thermal effects, floor-planning, and signal coupling, as well as new challenges that are specifically attributable to biological and fluidic domains, such as electrochemical effects, non-standard packaging, surface treatments, sterilization, microfabrication of surface structures, and microfluidic integration. We describe these concerns as they arise in lab-on-CMOS systems and discuss solutions that have been experimentally demonstrated.

Hypothalamic Integration of the Endocrine Signaling Related to Food Intake.

PubMed

Klockars, Anica; Levine, Allen S; Olszewski, Pawel K

2018-06-10

Hypothalamic integration of gastrointestinal and adipose tissue-derived hormones serves as a key element of neuroendocrine control of food intake. Leptin, adiponectin, oleoylethanolamide, cholecystokinin, and ghrelin, to name a few, are in a constant "cross talk" with the feeding-related brain circuits that encompass hypothalamic populations synthesizing anorexigens (melanocortins, CART, oxytocin) and orexigens (Agouti-related protein, neuropeptide Y, orexins). While this integrated neuroendocrine circuit successfully ensures that enough energy is acquired, it does not seem to be equally efficient in preventing excessive energy intake, especially in the obesogenic environment in which highly caloric and palatable food is constantly available. The current review presents an overview of intricate mechanisms underlying hypothalamic integration of energy balance-related peripheral endocrine input. We discuss vulnerabilities and maladaptive neuroregulatory processes, including changes in hypothalamic neuronal plasticity that propel overeating despite negative consequences.

Visual Circuit Development Requires Patterned Activity Mediated by Retinal Acetylcholine Receptors

PubMed Central

Burbridge, Timothy J.; Xu, Hong-Ping; Ackman, James B.; Ge, Xinxin; Zhang, Yueyi; Ye, Mei-Jun; Zhou, Z. Jimmy; Xu, Jian; Contractor, Anis; Crair, Michael C.

2014-01-01

SUMMARY The elaboration of nascent synaptic connections into highly ordered neural circuits is an integral feature of the developing vertebrate nervous system. In sensory systems, patterned spontaneous activity before the onset of sensation is thought to influence this process, but this conclusion remains controversial largely due to the inherent difficulty recording neural activity in early development. Here, we describe novel genetic and pharmacological manipulations of spontaneous retinal activity, assayed in vivo, that demonstrate a causal link between retinal waves and visual circuit refinement. We also report a de-coupling of downstream activity in retinorecipient regions of the developing brain after retinal wave disruption. Significantly, we show that the spatiotemporal characteristics of retinal waves affect the development of specific visual circuits. These results conclusively establish retinal waves as necessary and instructive for circuit refinement in the developing nervous system and reveal how neural circuits adjust to altered patterns of activity prior to experience. PMID:25466916

Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

PubMed

Xia, Qiangfei; Robinett, Warren; Cumbie, Michael W; Banerjee, Neel; Cardinali, Thomas J; Yang, J Joshua; Wu, Wei; Li, Xuema; Tong, William M; Strukov, Dmitri B; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

2009-10-01

Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array. We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devices.

System perspectives for mobile platform design in m-Health

NASA Astrophysics Data System (ADS)

Roveda, Janet M.; Fink, Wolfgang

2016-05-01

Advances in integrated circuit technologies have led to the integration of medical sensor front ends with data processing circuits, i.e., mobile platform design for wearable sensors. We discuss design methodologies for wearable sensor nodes and their applications in m-Health. From the user perspective, flexibility, comfort, appearance, fashion, ease-of-use, and visibility are key form factors. From the technology development point of view, high accuracy, low power consumption, and high signal to noise ratio are desirable features. From the embedded software design standpoint, real time data analysis algorithms, application and database interfaces are the critical components to create successful wearable sensor-based products.

RAD hard PROM design study

NASA Technical Reports Server (NTRS)

1981-01-01

The results of a preliminary study on the design of a radiation hardened fusible link programmable read-only memory (PROM) are presented. Various fuse technologies and the effects of radiation on MOS integrated circuits are surveyed. A set of design rules allowing the fabrication of a radiation hardened PROM using a Si-gate CMOS process is defined. A preliminary cell layout was completed and the programming concept defined. A block diagram is used to describe the circuit components required for a 4 K design. A design goal data sheet giving target values for the AC, DC, and radiation parameters of the circuit is presented.

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Reconfigurable Cellular Photonic Crystal Arrays (RCPA)

DTIC Science & Technology

2013-03-01

signal processing based on reconfigurable integrated optics devices. This technology has the potential to revolutionize the design circle of optical...Accomplishments III.A. Design and fabrication of an accumulation-mode modulator Figure 1(a) shows the schematic of a compact resonator on the double-Si... integration of silicon nitride on silicon-on-insulator platform to enhance the arsenal of photonic circuit designers . The coherent integration of

Process design kit and circuits at a 2 µm technology node for flexible wearable electronics applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Torres-Miranda, Miguel; Petritz, Andreas; Gold, Herbert; Stadlober, Barbara

2016-09-01

In this work we present our most advanced technology node of organic thin film transistors (OTFTs) manufactured with a channel length as short as 2 μm by contact photolithography and a self-alignment process directly on a plastic substrate. Our process design kit (PDK) is described with P-type transistors, capacitors and 3 metal layers for connections of complex circuits. The OTFTs are composed of a double dielectric layer with a photopatternable ultra thin polymer (PNDPE) and alumina, with a thickness on the order of 100 nm. The organic semiconductor is either Pentacene or DNTT, which have a stable average mobility up to 0.1 cm2/Vs. Finally, a polymer (e.g.: Parylene-C) is used as a passivation layer. We describe also our design rules for the placement of standard circuit cells. A "plastic wafer" is fabricated containing 49 dies. Each die of 1 cm2 has between 25 to 50 devices, proving larger scale integration in such a small space, unique in organic technologies. Finally, we present the design (by simulations using a Spice model for OTFTs) and the test of analog and digital basic circuits: amplifiers with DC gains of about 20 dB, comparators, inverters and logic gates working in the frequency range of 1-10 kHz. These standard circuit cells could be used for signal conditioning and integrated as active matrices for flexible sensors from 3rd party institutions, thus opening our fab to new ideas and sophisticated pre-industrial low cost applications for the emerging fields of biomedical devices and wearable electronics for virtual/augmented reality.

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

PubMed

Shen, Wen-Wei; Chen, Kuan-Neng

2017-12-01

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

An Anatomically Constrained Model for Path Integration in the Bee Brain.

PubMed

Stone, Thomas; Webb, Barbara; Adden, Andrea; Weddig, Nicolai Ben; Honkanen, Anna; Templin, Rachel; Wcislo, William; Scimeca, Luca; Warrant, Eric; Heinze, Stanley

2017-10-23

Path integration is a widespread navigational strategy in which directional changes and distance covered are continuously integrated on an outward journey, enabling a straight-line return to home. Bees use vision for this task-a celestial-cue-based visual compass and an optic-flow-based visual odometer-but the underlying neural integration mechanisms are unknown. Using intracellular electrophysiology, we show that polarized-light-based compass neurons and optic-flow-based speed-encoding neurons converge in the central complex of the bee brain, and through block-face electron microscopy, we identify potential integrator cells. Based on plausible output targets for these cells, we propose a complete circuit for path integration and steering in the central complex, with anatomically identified neurons suggested for each processing step. The resulting model circuit is thus fully constrained biologically and provides a functional interpretation for many previously unexplained architectural features of the central complex. Moreover, we show that the receptive fields of the newly discovered speed neurons can support path integration for the holonomic motion (i.e., a ground velocity that is not precisely aligned with body orientation) typical of bee flight, a feature not captured in any previously proposed model of path integration. In a broader context, the model circuit presented provides a general mechanism for producing steering signals by comparing current and desired headings-suggesting a more basic function for central complex connectivity, from which path integration may have evolved. Copyright © 2017 Elsevier Ltd. All rights reserved.

Differential transimpedance amplifier circuit for correlated differential amplification

DOEpatents

Gresham, Christopher A [Albuquerque, NM; Denton, M Bonner [Tucson, AZ; Sperline, Roger P [Tucson, AZ

2008-07-22

A differential transimpedance amplifier circuit for correlated differential amplification. The amplifier circuit increase electronic signal-to-noise ratios in charge detection circuits designed for the detection of very small quantities of electrical charge and/or very weak electromagnetic waves. A differential, integrating capacitive transimpedance amplifier integrated circuit comprising capacitor feedback loops performs time-correlated subtraction of noise.

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Modeling selective attention using a neuromorphic analog VLSI device.

PubMed

Indiveri, G

2000-12-01

Attentional mechanisms are required to overcome the problem of flooding a limited processing capacity system with information. They are present in biological sensory systems and can be a useful engineering tool for artificial visual systems. In this article we present a hardware model of a selective attention mechanism implemented on a very large-scale integration (VLSI) chip, using analog neuromorphic circuits. The chip exploits a spike-based representation to receive, process, and transmit signals. It can be used as a transceiver module for building multichip neuromorphic vision systems. We describe the circuits that carry out the main processing stages of the selective attention mechanism and provide experimental data for each circuit. We demonstrate the expected behavior of the model at the system level by stimulating the chip with both artificially generated control signals and signals obtained from a saliency map, computed from an image containing several salient features.

Compensation for Lithography Induced Process Variations during Physical Design

NASA Astrophysics Data System (ADS)

Chin, Eric Yiow-Bing

This dissertation addresses the challenge of designing robust integrated circuits in the deep sub micron regime in the presence of lithography process variability. By extending and combining existing process and circuit analysis techniques, flexible software frameworks are developed to provide detailed studies of circuit performance in the presence of lithography variations such as focus and exposure. Applications of these software frameworks to select circuits demonstrate the electrical impact of these variations and provide insight into variability aware compact models that capture the process dependent circuit behavior. These variability aware timing models abstract lithography variability from the process level to the circuit level and are used to estimate path level circuit performance with high accuracy with very little overhead in runtime. The Interconnect Variability Characterization (IVC) framework maps lithography induced geometrical variations at the interconnect level to electrical delay variations. This framework is applied to one dimensional repeater circuits patterned with both 90nm single patterning and 32nm double patterning technologies, under the presence of focus, exposure, and overlay variability. Studies indicate that single and double patterning layouts generally exhibit small variations in delay (between 1--3%) due to self compensating RC effects associated with dense layouts and overlay errors for layouts without self-compensating RC effects. The delay response of each double patterned interconnect structure is fit with a second order polynomial model with focus, exposure, and misalignment parameters with 12 coefficients and residuals of less than 0.1ps. The IVC framework is also applied to a repeater circuit with cascaded interconnect structures to emulate more complex layout scenarios, and it is observed that the variations on each segment average out to reduce the overall delay variation. The Standard Cell Variability Characterization (SCVC) framework advances existing layout-level lithography aware circuit analysis by extending it to cell-level applications utilizing a physically accurate approach that integrates process simulation, compact transistor models, and circuit simulation to characterize electrical cell behavior. This framework is applied to combinational and sequential cells in the Nangate 45nm Open Cell Library, and the timing response of these cells to lithography focus and exposure variations demonstrate Bossung like behavior. This behavior permits the process parameter dependent response to be captured in a nine term variability aware compact model based on Bossung fitting equations. For a two input NAND gate, the variability aware compact model captures the simulated response to an accuracy of 0.3%. The SCVC framework is also applied to investigate advanced process effects including misalignment and layout proximity. The abstraction of process variability from the layout level to the cell level opens up an entire new realm of circuit analysis and optimization and provides a foundation for path level variability analysis without the computationally expensive costs associated with joint process and circuit simulation. The SCVC framework is used with slight modification to illustrate the speedup and accuracy tradeoffs of using compact models. With variability aware compact models, the process dependent performance of a three stage logic circuit can be estimated to an accuracy of 0.7% with a speedup of over 50,000. Path level variability analysis also provides an accurate estimate (within 1%) of ring oscillator period in well under a second. Another significant advantage of variability aware compact models is that they can be easily incorporated into existing design methodologies for design optimization. This is demonstrated by applying cell swapping on a logic circuit to reduce the overall delay variability along a circuit path. By including these variability aware compact models in cell characterization libraries, design metrics such as circuit timing, power, area, and delay variability can be quickly assessed to optimize for the correct balance of all design metrics, including delay variability. Deterministic lithography variations can be easily captured using the variability aware compact models described in this dissertation. However, another prominent source of variability is random dopant fluctuations, which affect transistor threshold voltage and in turn circuit performance. The SCVC framework is utilized to investigate the interactions between deterministic lithography variations and random dopant fluctuations. Monte Carlo studies show that the output delay distribution in the presence of random dopant fluctuations is dependent on lithography focus and exposure conditions, with a 3.6 ps change in standard deviation across the focus exposure process window. This indicates that the electrical impact of random variations is dependent on systematic lithography variations, and this dependency should be included for precise analysis.

A photonic circuit for complementary frequency shifting, in-phase quadrature/single sideband modulation and frequency multiplication: analysis and integration feasibility

NASA Astrophysics Data System (ADS)

Hasan, Mehedi; Hu, Jianqi; Nikkhah, Hamdam; Hall, Trevor

2017-08-01

A novel photonic integrated circuit architecture for implementing orthogonal frequency division multiplexing by means of photonic generation of phase-correlated sub-carriers is proposed. The circuit can also be used for implementing complex modulation, frequency up-conversion of the electrical signal to the optical domain and frequency multiplication. The principles of operation of the circuit are expounded using transmission matrices and the predictions of the analysis are verified by computer simulation using an industry-standard software tool. Non-ideal scenarios that may affect the correct function of the circuit are taken into consideration and quantified. The discussion of integration feasibility is illustrated by a photonic integrated circuit that has been fabricated using 'library' components and which features most of the elements of the proposed circuit architecture. The circuit is found to be practical and may be fabricated in any material platform that offers a linear electro-optic modulator such as organic or ferroelectric thin films hybridized with silicon photonics.

Testbed Experiment for SPIDER: A Photonic Integrated Circuit-based Interferometric imaging system

NASA Astrophysics Data System (ADS)

Badham, K.; Duncan, A.; Kendrick, R. L.; Wuchenich, D.; Ogden, C.; Chriqui, G.; Thurman, S. T.; Su, T.; Lai, W.; Chun, J.; Li, S.; Liu, G.; Yoo, S. J. B.

The Lockheed Martin Advanced Technology Center (LM ATC) and the University of California at Davis (UC Davis) are developing an electro-optical (EO) imaging sensor called SPIDER (Segmented Planar Imaging Detector for Electro-optical Reconnaissance) that seeks to provide a 10x to 100x size, weight, and power (SWaP) reduction alternative to the traditional bulky optical telescope and focal-plane detector array. The substantial reductions in SWaP would reduce cost and/or provide higher resolution by enabling a larger-aperture imager in a constrained volume. Our SPIDER imager replaces the traditional optical telescope and digital focal plane detector array with a densely packed interferometer array based on emerging photonic integrated circuit (PIC) technologies that samples the object being imaged in the Fourier domain (i.e., spatial frequency domain), and then reconstructs an image. Our approach replaces the large optics and structures required by a conventional telescope with PICs that are accommodated by standard lithographic fabrication techniques (e.g., complementary metal-oxide-semiconductor (CMOS) fabrication). The standard EO payload integration and test process that involves precision alignment and test of optical components to form a diffraction limited telescope is, therefore, replaced by in-process integration and test as part of the PIC fabrication, which substantially reduces associated schedule and cost. In this paper we describe the photonic integrated circuit design and the testbed used to create the first images of extended scenes. We summarize the image reconstruction steps and present the final images. We also describe our next generation PIC design for a larger (16x area, 4x field of view) image.

Technology CAD for integrated circuit fabrication technology development and technology transfer

NASA Astrophysics Data System (ADS)

Saha, Samar

2003-07-01

In this paper systematic simulation-based methodologies for integrated circuit (IC) manufacturing technology development and technology transfer are presented. In technology development, technology computer-aided design (TCAD) tools are used to optimize the device and process parameters to develop a new generation of IC manufacturing technology by reverse engineering from the target product specifications. While in technology transfer to manufacturing co-location, TCAD is used for process centering with respect to high-volume manufacturing equipment of the target manufacturing equipment of the target manufacturing facility. A quantitative model is developed to demonstrate the potential benefits of the simulation-based methodology in reducing the cycle time and cost of typical technology development and technology transfer projects over the traditional practices. The strategy for predictive simulation to improve the effectiveness of a TCAD-based project, is also discussed.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom

PubMed Central

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-01-01

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process. PMID:27321821

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

PubMed

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-06-20

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Study of switching electric circuits with DC hybrid breaker, one stage

NASA Astrophysics Data System (ADS)

Niculescu, T.; Marcu, M.; Popescu, F. G.

2016-06-01

The paper presents a method of extinguishing the electric arc that occurs between the contacts of direct current breakers. The method consists of using an LC type extinguishing group to be optimally sized. From this point of view is presented a theoretical approach to the phenomena that occurs immediately after disconnecting the load and the specific diagrams are drawn. Using these, the elements extinguishing group we can choose. At the second part of the paper there is presented an analyses of the circuit switching process by decomposing the process in particular time sequences. For every time interval there was conceived a numerical simulation model in MATLAB-SIMULINK medium which integrates the characteristic differential equation and plots the capacitor voltage variation diagram and the circuit dumping current diagram.

Effects of mould on electrochemical migration behaviour of immersion silver finished printed circuit board.

PubMed

Yi, Pan; Xiao, Kui; Dong, Chaofang; Zou, Shiwen; Li, Xiaogang

2018-02-01

The role played by mould in the electrochemical migration (ECM) behaviour of an immersion silver finished printed circuit board (PCB-ImAg) under a direct current (DC) bias was investigated. An interesting phenomenon is found whereby mould, especially Aspergillus niger, can preferentially grow well on PCB-ImAg under electrical bias and then bridge integrated circuits and form a migration path. The cooperation of the mould and DC bias aggravates the ECM process occurring on PCB-ImAg. When the bias voltage is below 15V, ECM almost does not occur for Ag coating. Mechanisms that explain the ECM processes of PCB-ImAg in the presence of mould and DC bias are proposed. Copyright © 2017. Published by Elsevier B.V.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Analog Module Architecture for Space-Qualified Field-Programmable Mixed-Signal Arrays

NASA Technical Reports Server (NTRS)

Edwards, R. Timothy; Strohbehn, Kim; Jaskulek, Steven E.; Katz, Richard

1999-01-01

Spacecraft require all manner of both digital and analog circuits. Onboard digital systems are constructed almost exclusively from field-programmable gate array (FPGA) circuits providing numerous advantages over discrete design including high integration density, high reliability, fast turn-around design cycle time, lower mass, volume, and power consumption, and lower parts acquisition and flight qualification costs. Analog and mixed-signal circuits perform tasks ranging from housekeeping to signal conditioning and processing. These circuits are painstakingly designed and built using discrete components due to a lack of options for field-programmability. FPAA (Field-Programmable Analog Array) and FPMA (Field-Programmable Mixed-signal Array) parts exist but not in radiation-tolerant technology and not necessarily in an architecture optimal for the design of analog circuits for spaceflight applications. This paper outlines an architecture proposed for an FPAA fabricated in an existing commercial digital CMOS process used to make radiation-tolerant antifuse-based FPGA devices. The primary concerns are the impact of the technology and the overall array architecture on the flexibility of programming, the bandwidth available for high-speed analog circuits, and the accuracy of the components for high-performance applications.

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits.

PubMed

Lu, Yegang; Stegmaier, Matthias; Nukala, Pavan; Giambra, Marco A; Ferrari, Simone; Busacca, Alessandro; Pernice, Wolfram H P; Agarwal, Ritesh

2017-01-11

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition between amorphous and crystalline states. We perform time-resolved measurements of the transient change in both the optical transmission and resistance of the nanowire and show reversible switching operations in both the optical and the electrical domains. Our results pave the way toward on-chip multifunctional optoelectronic integrated devices, waveguide integrated memories, and hybrid processing applications.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkow, N.D.; Wang, G.; Volkow, N.D.

Based on brain imaging findings, we present a model according to which addiction emerges as an imbalance in the information processing and integration among various brain circuits and functions. The dysfunctions reflect (a) decreased sensitivity of reward circuits, (b) enhanced sensitivity of memory circuits to conditioned expectations to drugs and drug cues, stress reactivity, and (c) negative mood, and a weakened control circuit. Although initial experimentation with a drug of abuse is largely a voluntary behavior, continued drug use can eventually impair neuronal circuits in the brain that are involved in free will, turning drug use into an automatic compulsivemore » behavior. The ability of addictive drugs to co-opt neurotransmitter signals between neurons (including dopamine, glutamate, and GABA) modifies the function of different neuronal circuits, which begin to falter at different stages of an addiction trajectory. Upon exposure to the drug, drug cues or stress this results in unrestrained hyperactivation of the motivation/drive circuit that results in the compulsive drug intake that characterizes addiction.« less

Quantum optical circulator controlled by a single chirally coupled atom

NASA Astrophysics Data System (ADS)

Scheucher, Michael; Hilico, Adèle; Will, Elisa; Volz, Jürgen; Rauschenbeutel, Arno

2016-12-01

Integrated nonreciprocal optical components, which have an inherent asymmetry between their forward and backward propagation direction, are key for routing signals in photonic circuits. Here, we demonstrate a fiber-integrated quantum optical circulator operated by a single atom. Its nonreciprocal behavior arises from the chiral interaction between the atom and the transversally confined light. We demonstrate that the internal quantum state of the atom controls the operation direction of the circulator and that it features a strongly nonlinear response at the single-photon level. This enables, for example, photon number-dependent routing and novel quantum simulation protocols. Furthermore, such a circulator can in principle be prepared in a coherent superposition of its operational states and may become a key element for quantum information processing in scalable integrated optical circuits.

Prototype Parts of a Digital Beam-Forming Wide-Band Receiver

NASA Technical Reports Server (NTRS)

Kaplan, Steven B.; Pylov, Sergey V.; Pambianchi, Michael

2003-01-01

Some prototype parts of a digital beamforming (DBF) receiver that would operate at multigigahertz carrier frequencies have been developed. The beam-forming algorithm in a DBF receiver processes signals from multiple antenna elements with appropriate time delays and weighting factors chosen to enhance the reception of signals from a specific direction while suppressing signals from other directions. Such a receiver would be used in the directional reception of weak wideband signals -- for example, spread-spectrum signals from a low-power transmitter on an Earth-orbiting spacecraft or other distant source. The prototype parts include superconducting components on integrated-circuit chips, and a multichip module (MCM), within which the chips are to be packaged and connected via special inter-chip-communication circuits. The design and the underlying principle of operation are based on the use of the rapid single-flux quantum (RSFQ) family of logic circuits to obtain the required processing speed and signal-to-noise ratio. RSFQ circuits are superconducting circuits that exploit the Josephson effect. They are well suited for this application, having been proven to perform well in some circuits at frequencies above 100 GHz. In order to maintain the superconductivity needed for proper functioning of the RSFQ circuits, the MCM must be kept in a cryogenic environment during operation.

Identifying behavioral circuits in Drosophila melanogaster: moving targets in a flying insect.

PubMed

Griffith, Leslie C

2012-08-01

Drosophila melanogaster has historically been the premier model system for understanding the molecular and genetic bases of complex behaviors. In the last decade technical advances, in the form of new genetic tools and electrophysiological and optical methods, have allowed investigators to begin to dissect the neuronal circuits that generate behavior in the adult. The blossoming of circuit analysis in this organism has also reinforced our appreciation of the inadequacy of wiring diagrams for specifying complex behavior. Neuromodulation and neuronal plasticity act to reconfigure circuits on both short and long time scales. These processes act on the connectome, providing context by integrating external and internal cues that are relevant for behavioral choices. New approaches in the fly are providing insight into these basic principles of circuit function. Copyright © 2012 Elsevier Ltd. All rights reserved.

Semicustom integrated circuits and the standard transistor array radix (STAR)

NASA Technical Reports Server (NTRS)

Edge, T. M.

1977-01-01

The development, application, pros and cons of the semicustom and custom approach to the integration of circuits are described. Improvements in terms of cost, reliability, secrecy, power, and size reduction are examined. Also presented is the standard transistor array radix, a semicustom approach to digital integrated circuits that offers the advantages of both custom and semicustom approaches to integration.

High-resolution inkjet printing of all-polymer transistor circuits.

PubMed

Sirringhaus, H; Kawase, T; Friend, R H; Shimoda, T; Inbasekaran, M; Wu, W; Woo, E P

2000-12-15

Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10(5) were achieved.

Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

PubMed Central

Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

2014-01-01

Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits. PMID:24463956

Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits.

PubMed

Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

2014-01-27

Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits.

Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

NASA Technical Reports Server (NTRS)

Cocca, T.; Dakesian, S.

1977-01-01

A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

Electromagnetic Modelling of MMIC CPWs for High Frequency Applications

NASA Astrophysics Data System (ADS)

Sinulingga, E. P.; Kyabaggu, P. B. K.; Rezazadeh, A. A.

2018-02-01

Realising the theoretical electrical characteristics of components through modelling can be carried out using computer-aided design (CAD) simulation tools. If the simulation model provides the expected characteristics, the fabrication process of Monolithic Microwave Integrated Circuit (MMIC) can be performed for experimental verification purposes. Therefore improvements can be suggested before mass fabrication takes place. This research concentrates on development of MMIC technology by providing accurate predictions of the characteristics of MMIC components using an improved Electromagnetic (EM) modelling technique. The knowledge acquired from the modelling and characterisation process in this work can be adopted by circuit designers for various high frequency applications.

Afferent specific role of NMDA receptors for the circuit integration of hippocampal neurogliaform cells.

PubMed

Chittajallu, R; Wester, J C; Craig, M T; Barksdale, E; Yuan, X Q; Akgül, G; Fang, C; Collins, D; Hunt, S; Pelkey, K A; McBain, C J

2017-07-28

Appropriate integration of GABAergic interneurons into nascent cortical circuits is critical for ensuring normal information processing within the brain. Network and cognitive deficits associated with neurological disorders, such as schizophrenia, that result from NMDA receptor-hypofunction have been mainly attributed to dysfunction of parvalbumin-expressing interneurons that paradoxically express low levels of synaptic NMDA receptors. Here, we reveal that throughout postnatal development, thalamic, and entorhinal cortical inputs onto hippocampal neurogliaform cells are characterized by a large NMDA receptor-mediated component. This NMDA receptor-signaling is prerequisite for developmental programs ultimately responsible for the appropriate long-range AMPAR-mediated recruitment of neurogliaform cells. In contrast, AMPAR-mediated input at local Schaffer-collateral synapses on neurogliaform cells remains normal following NMDA receptor-ablation. These afferent specific deficits potentially impact neurogliaform cell mediated inhibition within the hippocampus and our findings reveal circuit loci implicating this relatively understudied interneuron subtype in the etiology of neurodevelopmental disorders characterized by NMDA receptor-hypofunction.Proper brain function depends on the correct assembly of excitatory and inhibitory neurons into neural circuits. Here the authors show that during early postnatal development in mice, NMDAR signaling via activity of long-range synaptic inputs onto neurogliaform cells is required for their appropriate integration into the hippocampal circuitry.

Subsurface microscopy of interconnect layers of an integrated circuit.

PubMed

Köklü, F Hakan; Unlü, M Selim

2010-01-15

We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.

Postirradiation Effects In Integrated Circuits

NASA Technical Reports Server (NTRS)

Shaw, David C.; Barnes, Charles E.

1993-01-01

Two reports discuss postirradiation effects in integrated circuits. Presents examples of postirradiation measurements of performances of integrated circuits of five different types: dual complementary metal oxide/semiconductor (CMOS) flip-flop; CMOS analog multiplier; two CMOS multiplying digital-to-analog converters; electrically erasable programmable read-only memory; and semiconductor/oxide/semiconductor octal buffer driver.

76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-17

... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of a Commission Determination... certain large scale integrated circuit semiconductor chips and products containing same by reason of... existence of a domestic industry. The Commission's notice of investigation named several respondents...

77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-01

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-29

... INTERNATIONAL TRADE COMMISSION [DN 2888] Certain Semiconductor Integrated Circuit Devices and... Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is soliciting comments on... Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during...

77 FR 33486 - Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-06

... INTERNATIONAL TRADE COMMISSION [Docket No. 2899] Certain Integrated Circuit Packages Provided With... complaint entitled Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and..., telephone (202) 205-2000. The public version of the complaint can be accessed on the Commission's electronic...

A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

PubMed

Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

2008-02-01

Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

Techniques of Final Preseal Visual Inspection

NASA Technical Reports Server (NTRS)

Anstead, R. J.

1975-01-01

A dissertation is given on the final preseal visual inspection of microcircuit devices to detect manufacturing defects and reduce failure rates in service. The processes employed in fabricating monolithic integrated circuits and hybrid microcircuits, various failure mechanisms resulting from deficiencies in those processes, and the rudiments of performing final inspection are outlined.

Front and backside processed thin film electronic devices

DOEpatents

Evans, Paul G [Madison, WI; Lagally, Max G [Madison, WI; Ma, Zhenqiang [Middleton, WI; Yuan, Hao-Chih [Lakewood, CO; Wang, Guogong [Madison, WI; Eriksson, Mark A [Madison, WI

2012-01-03

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

2015-03-01

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Wiring Together Synthetic Bacterial Consortia to Create a Biological Integrated Circuit.

PubMed

Perry, Nicolas; Nelson, Edward M; Timp, Gregory

2016-12-16

The promise of adapting biology to information processing will not be realized until engineered gene circuits, operating in different cell populations, can be wired together to express a predictable function. Here, elementary biological integrated circuits (BICs), consisting of two sets of transmitter and receiver gene circuit modules with embedded memory placed in separate cell populations, were meticulously assembled using live cell lithography and wired together by the mass transport of quorum-sensing (QS) signal molecules to form two isolated communication links (comlinks). The comlink dynamics were tested by broadcasting "clock" pulses of inducers into the networks and measuring the responses of functionally linked fluorescent reporters, and then modeled through simulations that realistically captured the protein production and molecular transport. These results show that the comlinks were isolated and each mimicked aspects of the synchronous, sequential networks used in digital computing. The observations about the flow conditions, derived from numerical simulations, and the biofilm architectures that foster or silence cell-to-cell communications have implications for everything from decontamination of drinking water to bacterial virulence.

Réalisation de circuits intégrés I^2L à base de transistors bipolaires a double hétérojonction GaAlAs/GaAs

NASA Astrophysics Data System (ADS)

Vannel, J. P.; Camps, T.; Ferreira, A. S.; Tasselh, J.; Cazarré, A.; Marty, A.; Bailbé, J. P.

1991-04-01

GaAlAs/GaAs double heterojunction bipolar transistors (DHBT's) have a number of advantages for I^2L (integrated injection logic) high speed integrated circuits concerning the interchangeability between the emitter and the collector and a high design flexibility due to the use of two heterojunctions. We present the fabrication process of an I^2L integrated circuit including a frequency divider-by-two and a ring oscillator which presents a propagation delay time of 1.2 ns for a power consumption of 8 mW. Les transistors bipolaires à double hétérojonction GaAlAs/GaAs (TBDH) présentent de nombreux avantages pour leur application dans des circuits intégrés de logique I^2L (logique à injection intégrée), dont en particulier l'interchangeabilité entre émetteur et collecteur, et la liberté de conception résultant de l'utilisation de deux hétérojonctions. Dans ce cadre nous décrivons les principales étapes technologiques de fabrication d'un circuit intégré I^2L comportant un diviseur de fréquence par 2 et un oscillateur en anneau. Ce demier présente un temps de propagation de 1,2 ns pour une puissance dissipée de 8 mW.

Memory formation orchestrates the wiring of adult-born hippocampal neurons into brain circuits.

PubMed

Petsophonsakul, Petnoi; Richetin, Kevin; Andraini, Trinovita; Roybon, Laurent; Rampon, Claire

2017-08-01

During memory formation, structural rearrangements of dendritic spines provide a mean to durably modulate synaptic connectivity within neuronal networks. New neurons generated throughout the adult life in the dentate gyrus of the hippocampus contribute to learning and memory. As these neurons become incorporated into the network, they generate huge numbers of new connections that modify hippocampal circuitry and functioning. However, it is yet unclear as to how the dynamic process of memory formation influences their synaptic integration into neuronal circuits. New memories are established according to a multistep process during which new information is first acquired and then consolidated to form a stable memory trace. Upon recall, memory is transiently destabilized and vulnerable to modification. Using contextual fear conditioning, we found that learning was associated with an acceleration of dendritic spines formation of adult-born neurons, and that spine connectivity becomes strengthened after memory consolidation. Moreover, we observed that afferent connectivity onto adult-born neurons is enhanced after memory retrieval, while extinction training induces a change of spine shapes. Together, these findings reveal that the neuronal activity supporting memory processes strongly influences the structural dendritic integration of adult-born neurons into pre-existing neuronal circuits. Such change of afferent connectivity is likely to impact the overall wiring of hippocampal network, and consequently, to regulate hippocampal function.

Microluminometer chip and method to measure bioluminescence

DOEpatents

Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN

2008-05-13

An integrated microluminometer includes an integrated circuit chip having at least one n-well/p-substrate junction photodetector for converting light received into a photocurrent, and a detector on the chip for processing the photocurrent. A distributed electrode configuration including a plurality of spaced apart electrodes disposed on an active region of the photodetector is preferably used to raise efficiency.

The Department of Defense Very High Speed Integrated Circuit (VHSIC) Technology Availability Program Plan for the Committees on Armed Services United States Congress.

DTIC Science & Technology

1986-06-30

features of computer aided design systems and statistical quality control procedures that are generic to chip sets and processes. RADIATION HARDNESS -The...System PSP Programmable Signal Processor SSI Small Scale Integration ." TOW Tube Launched, Optically Tracked, Wire Guided TTL Transistor Transitor Logic

Electrochemical planarization

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1993-10-26

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis

DOE PAGES

Gao, Wei; Emaminejad, Sam; Nyein, Hnin Yin Yin; ...

2016-01-27

We report that wearable sensor technologies are essential to the realization of personalized medicine through continuously monitoring an individual’s state of health. Sampling human sweat, which is rich in physiological information13, could enable non-invasive monitoring. Previously reported sweat-based and other noninvasive biosensors either can only monitor a single analyte at a time or lack on-site signal processing circuitry and sensor calibration mechanisms for accurate analysis of the physiological state14–18. Given the complexity of sweat secretion, simultaneous and multiplexed screening of target biomarkers is critical and requires full system integration to ensure the accuracy of measurements. Here we present a mechanicallymore » flexible and fully integrated (that is, no external analysis is needed) sensor array for multiplexed in situ perspiration analysis, which simultaneously and selectively measures sweat metabolites (such as glucose and lactate) and electrolytes (such as sodium and potassium ions), as well as the skin temperature (to calibrate the response of the sensors). Lastly, our work bridges the technological gap between signal transduction, conditioning (amplification and filtering), processing and wireless transmission in wearable biosensors by merging plasticbased sensors that interface with the skin with silicon integrated circuits consolidated on a flexible circuit board for complex signal processing.« less

Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Wei; Emaminejad, Sam; Nyein, Hnin Yin Yin

We report that wearable sensor technologies are essential to the realization of personalized medicine through continuously monitoring an individual’s state of health. Sampling human sweat, which is rich in physiological information13, could enable non-invasive monitoring. Previously reported sweat-based and other noninvasive biosensors either can only monitor a single analyte at a time or lack on-site signal processing circuitry and sensor calibration mechanisms for accurate analysis of the physiological state14–18. Given the complexity of sweat secretion, simultaneous and multiplexed screening of target biomarkers is critical and requires full system integration to ensure the accuracy of measurements. Here we present a mechanicallymore » flexible and fully integrated (that is, no external analysis is needed) sensor array for multiplexed in situ perspiration analysis, which simultaneously and selectively measures sweat metabolites (such as glucose and lactate) and electrolytes (such as sodium and potassium ions), as well as the skin temperature (to calibrate the response of the sensors). Lastly, our work bridges the technological gap between signal transduction, conditioning (amplification and filtering), processing and wireless transmission in wearable biosensors by merging plasticbased sensors that interface with the skin with silicon integrated circuits consolidated on a flexible circuit board for complex signal processing.« less

Stability of the Baseline Holder in Readout Circuits For Radiation Detectors

PubMed Central

Chen, Y.; Cui, Y.; O’Connor, P.; Seo, Y.; Camarda, G. S.; Hossain, A.; Roy, U.; Yang, G.; James, R. B.

2016-01-01

Baseline holder (BLH) circuits are used widely to stabilize the analog output of application-specific integrated circuits (ASICs) for high-count-rate applications. The careful design of BLH circuits is vital to the overall stability of the analog-signal-processing chain in ASICs. Recently, we observed self-triggered fluctuations in an ASIC in which the shaping circuits have a BLH circuit in the feedback loop. In fact, further investigations showed that methods of enhancing small-signal stabilities cause an even worse situation. To resolve this problem, we used large-signal analyses to study the circuit’s stability. We found that a relatively small gain for the error amplifier and a small current in the non-linear stage of the BLH are required to enhance stability in large-signal analysis, which will compromise the properties of the BLH. These findings were verified by SPICE simulations. In this paper, we present our detailed analysis of the BLH circuits, and propose an improved version of them that have only minimal self-triggered fluctuations. We summarize the design considerations both for the stability and the properties of the BLH circuits. PMID:27182081

75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-05

... Integrated Circuit Semiconductor Chips and Products Containing Same; Notice of Investigation AGENCY: U.S... of certain large scale integrated circuit semiconductor chips and products containing same by reason... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...

75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-04

... Semiconductor Integrated Circuits and Products Containing Same; Notice of Commission Determination To Review in... importation of certain semiconductor integrated circuits and products containing same by reason of... that there exists a domestic industry with respect to each of the asserted patents. The complaint named...

Contextual signals in visual cortex.

PubMed

Khan, Adil G; Hofer, Sonja B

2018-06-05

Vision is an active process. What we perceive strongly depends on our actions, intentions and expectations. During visual processing, these internal signals therefore need to be integrated with the visual information from the retina. The mechanisms of how this is achieved by the visual system are still poorly understood. Advances in recording and manipulating neuronal activity in specific cell types and axonal projections together with tools for circuit tracing are beginning to shed light on the neuronal circuit mechanisms of how internal, contextual signals shape sensory representations. Here we review recent work, primarily in mice, that has advanced our understanding of these processes, focusing on contextual signals related to locomotion, behavioural relevance and predictions. Copyright © 2018 Elsevier Ltd. All rights reserved.

Multichannel, Active Low-Pass Filters

NASA Technical Reports Server (NTRS)

Lev, James J.

1989-01-01

Multichannel integrated circuits cascaded to obtain matched characteristics. Gain and phase characteristics of channels of multichannel, multistage, active, low-pass filter matched by making filter of cascaded multichannel integrated-circuit operational amplifiers. Concept takes advantage of inherent equality of electrical characteristics of nominally-identical circuit elements made on same integrated-circuit chip. Characteristics of channels vary identically with changes in temperature. If additional matched channels needed, chips containing more than two operational amplifiers apiece (e.g., commercial quad operational amplifliers) used. Concept applicable to variety of equipment requiring matched gain and phase in multiple channels - radar, test instruments, communication circuits, and equipment for electronic countermeasures.

Analog/digital pH meter system I.C.

NASA Technical Reports Server (NTRS)

Vincent, Paul; Park, Jea

1992-01-01

The project utilizes design automation software tools to design, simulate, and fabricate a pH meter integrated circuit (IC) system including a successive approximation type seven-bit analog to digital converter circuits using a 1.25 micron N-Well CMOS MOSIS process. The input voltage ranges from 0.5 to 1.0 V derived from a special type pH sensor, and the output is a three-digit decimal number display of pH with one decimal point.

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

PubMed

Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2017-04-25

Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Beheim, Glenn M.; Okojie, Robert S.; Chang, Carl W.; Meredith, Roger D.; Ferrier, Terry L.; Evans, Laura J.; Krasowski, Michael J.;

70 nm resolution in subsurface optical imaging of silicon integrated-circuits using pupil-function engineering

NASA Astrophysics Data System (ADS)

Serrels, K. A.; Ramsay, E.; Reid, D. T.

2009-02-01

We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture when performing nonlinear imaging in the vectorial-focusing regime through manipulation of the focal spot geometry. By acquiring two-photon optical beam-induced current images of a silicon integrated-circuit using solid-immersion-lens microscopy at 1550 nm we achieved 70 nm resolution. This result demonstrates a reduction in the minimum effective focal spot diameter of 36%. In addition, the annular-aperture-induced extension of the depth-of-focus causes an observable decrease in the depth contrast of the resulting image and we explain the origins of this using a simulation of the imaging process.

Photonic integrated circuits unveil crisis-induced intermittency.

PubMed

Karsaklian Dal Bosco, Andreas; Akizawa, Yasuhiro; Kanno, Kazutaka; Uchida, Atsushi; Harayama, Takahisa; Yoshimura, Kazuyuki

2016-09-19

We experimentally investigate an intermittent route to chaos in a photonic integrated circuit consisting of a semiconductor laser with time-delayed optical feedback from a short external cavity. The transition from a period-doubling dynamics to a fully-developed chaos reveals a stage intermittently exhibiting these two dynamics. We unveil the bifurcation mechanism underlying this route to chaos by using the Lang-Kobayashi model and demonstrate that the process is based on a phenomenon of attractor expansion initiated by a particular distribution of the local Lyapunov exponents. We emphasize on the crucial importance of the distribution of the steady-state solutions introduced by the time-delayed feedback on the existence of this intermittent dynamics.

Peptide neuromodulation in invertebrate model systems

PubMed Central

Taghert, Paul H.; Nitabach, Michael N.

2012-01-01

Neuropeptides modulate neural circuits controlling adaptive animal behaviors and physiological processes, such as feeding/metabolism, reproductive behaviors, circadian rhythms, central pattern generation, and sensorimotor integration. Invertebrate model systems have enabled detailed experimental analysis using combined genetic, behavioral, and physiological approaches. Here we review selected examples of neuropeptide modulation in crustaceans, mollusks, insects, and nematodes, with a particular emphasis on the genetic model organisms Drosophila melanogaster and Caenorhabditis elegans, where remarkable progress has been made. On the basis of this survey, we provide several integrating conceptual principles for understanding how neuropeptides modulate circuit function, and also propose that continued progress in this area requires increased emphasis on the development of richer, more sophisticated behavioral paradigms. PMID:23040808

Associative Pattern Recognition In Analog VLSI Circuits

NASA Technical Reports Server (NTRS)

Tawel, Raoul

1995-01-01

Winner-take-all circuit selects best-match stored pattern. Prototype cascadable very-large-scale integrated (VLSI) circuit chips built and tested to demonstrate concept of electronic associative pattern recognition. Based on low-power, sub-threshold analog complementary oxide/semiconductor (CMOS) VLSI circuitry, each chip can store 128 sets (vectors) of 16 analog values (vector components), vectors representing known patterns as diverse as spectra, histograms, graphs, or brightnesses of pixels in images. Chips exploit parallel nature of vector quantization architecture to implement highly parallel processing in relatively simple computational cells. Through collective action, cells classify input pattern in fraction of microsecond while consuming power of few microwatts.

Novel electrochemical nickel metallization in silicon impedance engineering for mixed-signal system-on-chip crosstalk isolation

NASA Astrophysics Data System (ADS)

Zhang, Xi

One of the major challenges for single chip radio frequency integrated circuits (RFIC's) built on Si is the RE crosstalk through the Si substrate. Noise from switching transient in digital circuits can be transmitted through Si substrate and degrades the performance of analog circuit elements. A highly conductive moat or Faraday cage type structure of through-the-wafer thickness in the Si substrate was demonstrated to be effective in shielding electromagnetic interference thereby reducing RE cross-talk in high performance mixed signal integrated circuits. Such a structure incorporated into the p- Si substrate was realized by electroless Ni metallization over selected regions with ultra-high-aspect-ratio macropores that was etched electrochemically in p- Si substrates. The metallization process was conducted by immersing the macroporous Si sample in an alkaline aqueous solution containing Ni2+ without a reducing agent. It was found that working at slightly elevated temperature, Ni 2+ was rapidly reduced and deposited in the macropores. During the wet chemical process, conformal metallization on the pore wall was achieved. The entire porous Si skeleton was gradually replaced by Ni along the extended duration of immersion. In a p-/p+ epi Si substrate used for high performance digital CMOS, the suppression of crosstalk by the arrayed metallic Ni via structure fabricated from the front p side was significant that the crosstalk went down to the noise floor of the conventional measurement instruments. The process and mechanism of forming such a Ni structure over the original Si were studied. Theoretical computation relevant to the process was carried out to show a good consistency with the experiments.

Reusable vibration resistant integrated circuit mounting socket

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evans, C.N.

1993-12-31

This invention discloses a novel form of socket for integrated circuits to be mounted on printed circuit boards. The socket uses a novel contact which is fabricated out of a bimetallic strip with a shape which makes the end of the strip move laterally as temperature changes. The end of the strip forms a barb which digs into an integrated circuit lead at normal temperatures and hold it firmly in the contact, preventing loosening and open circuits from vibration. By cooling the contact containing the bimetallic strip the barb end can be made to release so that the integrated circuitmore » lead can be removed from the socket without damage either to the lead or to the socket components.« less

Reusable vibration resistant integrated circuit mounting socket

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evans, C.N.

1995-08-29

This invention discloses a novel form of socket for integrated circuits to be mounted on printed circuit boards. The socket uses a novel contact which is fabricated out of a bimetallic strip with a shape which makes the end of the strip move laterally as temperature changes. The end of the strip forms a barb which digs into an integrated circuit lead at normal temperatures and holds it firmly in the contact, preventing loosening and open circuits from vibration. By cooling the contact containing the bimetallic strip the barb end can be made to release so that the integrated circuitmore » lead can be removed from the socket without damage either to the lead or to the socket components. 11 figs.« less

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Low-Power Analog Processing for Sensing Applications: Low-Frequency Harmonic Signal Classification

PubMed Central

White, Daniel J.; William, Peter E.; Hoffman, Michael W.; Balkir, Sina

2013-01-01

A low-power analog sensor front-end is described that reduces the energy required to extract environmental sensing spectral features without using Fast Fouriér Transform (FFT) or wavelet transforms. An Analog Harmonic Transform (AHT) allows selection of only the features needed by the back-end, in contrast to the FFT, where all coefficients must be calculated simultaneously. We also show that the FFT coefficients can be easily calculated from the AHT results by a simple back-substitution. The scheme is tailored for low-power, parallel analog implementation in an integrated circuit (IC). Two different applications are tested with an ideal front-end model and compared to existing studies with the same data sets. Results from the military vehicle classification and identification of machine-bearing fault applications shows that the front-end suits a wide range of harmonic signal sources. Analog-related errors are modeled to evaluate the feasibility of and to set design parameters for an IC implementation to maintain good system-level performance. Design of a preliminary transistor-level integrator circuit in a 0.13 μm complementary metal-oxide-silicon (CMOS) integrated circuit process showed the ability to use online self-calibration to reduce fabrication errors to a sufficiently low level. Estimated power dissipation is about three orders of magnitude less than similar vehicle classification systems that use commercially available FFT spectral extraction. PMID:23892765

Tachometers Derived From a Brushless DC Motor

NASA Technical Reports Server (NTRS)

Howard, David E.; Smith, Dennis A.

2007-01-01

The upper part of the figure illustrates the major functional blocks of a direction-sensitive analog tachometer circuit based on the use of an unexcited two-phase brushless dc motor as a rotation transducer. The primary advantages of this circuit over many older tachometer circuits include the following: Its output inherently varies linearly with the rate of rotation of the shaft. Unlike some tachometer circuits that rely on differentiation of voltages with respect to time, this circuit relies on integration, which results in signals that are less noisy. There is no need for an additional shaft-angle sensor, nor is there any need to supply electrical excitation to a shaft-angle sensor. There is no need for mechanical brushes (which tend to act as sources of electrical noise). The underlying concept and electrical design are relatively simple. This circuit processes the back-electromagnetic force (back-emf) outputs of the two motor phases into a voltage directly proportional to the instantaneous rate (sign magnitude) of rotation of the shaft. The processing in this circuit effects a straightforward combination of mathematical operations leading to a final operation based on the well-known trigonometric identity (sin x)2 + (cos x)2 = 1 for any value of x. The principle of operation of this circuit is closely related to that of the tachometer circuit described in Tachometer Derived From Brushless Shaft-Angle Resolver (MFS-28845), NASA Tech Briefs, Vol. 19, No. 3 (March 1995), page 39. However, the present circuit is simpler in some respects because there is no need for sinusoidal excitation of shaftangle- resolver windings.

A Integrated Circuit for a Biomedical Capacitive Pressure Transducer

NASA Astrophysics Data System (ADS)

Smith, Michael John Sebastian

Medical research has an urgent need for a small, accurate, stable, low-power, biocompatible and inexpensive pressure sensor with a zero to full-scale range of 0-300 mmHg. An integrated circuit (IC) for use with a capacitive pressure transducer was designed, built and tested. The random pressure measurement error due to resolution and non-linearity is (+OR-)0.4 mmHg (at mid-range with a full -scale of 300 mmHg). The long-term systematic error due to falling battery voltage is (+OR-)0.6 mmHg. These figures were calculated from measurements of temperature, supply dependence and non-linearity on completed integrated circuits. The sensor IC allows measurement of temperature to (+OR-)0.1(DEGREES)C to allow for temperature compensation of the transducer. Novel micropower circuit design of the system components enabled these levels of accuracy to be reached. Capacitance is measured by a new ratiometric scheme employing an on -chip reference capacitor. This method greatly reduces the effects of voltage supply, temperature and manufacturing variations on the sensor circuit performance. The limits on performance of the bandgap reference circuit fabricated with a standard bipolar process using ion-implanted resistors were determined. Measurements confirm the limits of temperature stability as approximately (+OR-)300 ppm/(DEGREES)C. An exact analytical expression for the period of the Schmitt trigger oscillator, accounting for non-constant capacitor charging current, was formulated. Experiments to test agreement with theory showed that prediction of the oscillator period was very accurate. The interaction of fundamental and practical limits on the scaling of the transducer size was investigated including a correction to previous theoretical analysis of jitter in an RC oscillator. An areal reduction of 4 times should be achievable.

Information Resources: Knowledge and Power in the 21st Century.

ERIC Educational Resources Information Center

Oettinger, Anthony G.

1980-01-01

This article focuses on the mastery over the microscopic information processes embodied in devices such as integrated circuits and microcomputers and its effects on society and competition between the computer and telecommunications industries. (Author/SA)

Unfolding an electronic integrate-and-fire circuit.

PubMed

Carrillo, Humberto; Hoppensteadt, Frank

2010-01-01

Many physical and biological phenomena involve accumulation and discharge processes that can occur on significantly different time scales. Models of these processes have contributed to understand excitability self-sustained oscillations and synchronization in arrays of oscillators. Integrate-and-fire (I+F) models are popular minimal fill-and-flush mathematical models. They are used in neuroscience to study spiking and phase locking in single neuron membranes, large scale neural networks, and in a variety of applications in physics and electrical engineering. We show here how the classical first-order I+F model fits into the theory of nonlinear oscillators of van der Pol type by demonstrating that a particular second-order oscillator having small parameters converges in a singular perturbation limit to the I+F model. In this sense, our study provides a novel unfolding of such models and it identifies a constructible electronic circuit that is closely related to I+F.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Effects of /spl gamma/-rays on JFET devices and circuits fabricated in a detector-compatible Process

NASA Astrophysics Data System (ADS)

Betta, G. F. D.; Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.; Traversi, G.

2003-12-01

This work is concerned with the effects of /spl gamma/-rays on the static, signal and noise characteristics of JFET-based circuits belonging to a fabrication technology made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST), Trento, Italy. Such a process has been tuned with the aim of monolithically integrating the readout electronics on the same highly resistive substrate as multielectrode silicon detectors. The radiation tolerance of some test structures, including single devices and charge sensitive amplifiers, was studied in view of low-noise applications in industrial and medical imaging, X- and /spl gamma/-ray astronomy and high energy physics experiments. This paper intends to fill the gap in the study of gamma radiation effects on JFET devices and circuits belonging to detector-compatible technologies.

Local and long-range circuit elements for cerebellar function.

PubMed

Xiao, Le; Scheiffele, Peter

2018-02-01

The view of cerebellar functions has been extended from controlling sensorimotor processes to processing 'contextual' information and generating predictions for a diverse range of behaviors. These functions rely on the computation of the local cerebellar microcircuits and long-range connectivity that relays cerebellar output to various brain areas. In this review, we discuss recent work on two of the circuit elements, which are thought to be fundamental for a wide range of non-sensorimotor behaviors: The role for cerebellar granule cells in multimodal integration in the cerebellar cortex and the long-range connectivity between the deep cerebellar nuclei and the basal ganglia. Lastly, we discuss how studies on synapses and circuits of the cerebellum in rodent models of autism-spectrum disorders might contribute to our understanding of the pathophysiology of this class of neurodevelopmental disorders. Copyright © 2017. Published by Elsevier Ltd.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

PubMed

Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

2009-12-15

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

Three-dimensional integrated circuits for lab-on-chip dielectrophoresis of nanometer scale particles

NASA Astrophysics Data System (ADS)

Dickerson, Samuel J.; Noyola, Arnaldo J.; Levitan, Steven P.; Chiarulli, Donald M.

2007-01-01

In this paper, we present a mixed-technology micro-system for electronically manipulating and optically detecting virusscale particles in fluids that is designed using 3D integrated circuit technology. During the 3D fabrication process, the top-most chip tier is assembled upside down and the substrate material is removed. This places the polysilicon layer, which is used to create geometries with the process' minimum feature size, in close proximity to a fluid channel etched into the top of the stack. By taking advantage of these processing features inherent to "3D chip-stacking" technology, we create electrode arrays that have a gap spacing of 270 nm. Using 3D CMOS technology also provides the ability to densely integrate analog and digital control circuitry for the electrodes by using the additional levels of the chip stack. We show simulations of the system with a physical model of a Kaposi's sarcoma-associated herpes virus, which has a radius of approximately 125 nm, being dielectrophoretically arranged into striped patterns. We also discuss how these striped patterns of trapped nanometer scale particles create an effective diffraction grating which can then be sensed with macro-scale optical techniques.

Pneumatic oscillator circuits for timing and control of integrated microfluidics.

PubMed

Duncan, Philip N; Nguyen, Transon V; Hui, Elliot E

2013-11-05

Frequency references are fundamental to most digital systems, providing the basis for process synchronization, timing of outputs, and waveform synthesis. Recently, there has been growing interest in digital logic systems that are constructed out of microfluidics rather than electronics, as a possible means toward fully integrated laboratory-on-a-chip systems that do not require any external control apparatus. However, the full realization of this goal has not been possible due to the lack of on-chip frequency references, thus requiring timing signals to be provided from off-chip. Although microfluidic oscillators have been demonstrated, there have been no reported efforts to characterize, model, or optimize timing accuracy, which is the fundamental metric of a clock. Here, we report pneumatic ring oscillator circuits built from microfluidic valves and channels. Further, we present a compressible-flow analysis that differs fundamentally from conventional circuit theory, and we show the utility of this physically based model for the optimization of oscillator stability. Finally, we leverage microfluidic clocks to demonstrate circuits for the generation of phase-shifted waveforms, self-driving peristaltic pumps, and frequency division. Thus, pneumatic oscillators can serve as on-chip frequency references for microfluidic digital logic circuits. On-chip clocks and pumps both constitute critical building blocks on the path toward achieving autonomous laboratory-on-a-chip devices.

Development of Integrated Preamplifier for High-Frequency Ultrasonic Transducers and Low-Power Handheld Receiver

PubMed Central

Choi, Hojong; Li, Xiang; Lau, Sien-Ting; Hu, ChangHong; Zhou, Qifa; Shung, K. Kirk

2012-01-01

This paper describes the design of a front-end circuit consisting of an integrated preamplifier with a Sallen-Key Butterworth filter for very-high-frequency ultrasonic transducers and a low-power handheld receiver. This preamplifier was fabricated using a 0.18-μm 7WL SiGe bi-polar complementary metal oxide semiconductor (BiCMOS) process. The Sallen-Key filter is used to increase the voltage gain of the front-end circuit for high-frequency transducers which are generally low in sensitivity. The measured peak voltage gain of the frontend circuits for the BiCMOS preamplifier with the Sallen-Key filter was 41.28 dB at 100 MHz with a −6-dB bandwidth of 91%, and the dc power consumption of the BiCMOS preamplifier was 49.53 mW. The peak voltage gain of the front-end circuits for the CMOS preamplifier with the Sallen-Key filter was 39.52 dB at 100 MHz with a −6-dB bandwidth of 108%, and the dc power consumption of the CMOS preamplifier was 43.57 mW. Pulse-echo responses and wire phantom images with a single-element ultrasonic transducer have been acquired to demonstrate the performance of the front-end circuit. PMID:23443700

VLSI technology for smaller, cheaper, faster return link systems

NASA Technical Reports Server (NTRS)

Nanzetta, Kathy; Ghuman, Parminder; Bennett, Toby; Solomon, Jeff; Dowling, Jason; Welling, John

1994-01-01

Very Large Scale Integration (VLSI) Application-specific Integrated Circuit (ASIC) technology has enabled substantially smaller, cheaper, and more capable telemetry data systems. However, the rapid growth in available ASIC fabrication densities has far outpaced the application of this technology to telemetry systems. Available densities have grown by well over an order magnitude since NASA's Goddard Space Flight Center (GSFC) first began developing ASIC's for ground telemetry systems in 1985. To take advantage of these higher integration levels, a new generation of ASIC's for return link telemetry processing is under development. These new submicron devices are designed to further reduce the cost and size of NASA return link processing systems while improving performance. This paper describes these highly integrated processing components.

Simple photometer circuits using modular electronic components

NASA Technical Reports Server (NTRS)

Wampler, J. E.

1975-01-01

Operational and peak holding amplifiers are discussed as useful circuits for bioluminescence assays. Circuit diagrams are provided. While analog methods can give a good integration on short time scales, digital methods were found best for long term integration in bioluminescence assays. Power supplies, a general photometer circuit with ratio capability, and variations in the basic photometer design are also considered.

Integrated circuits and logic operations based on single-layer MoS2.

PubMed

Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

2011-12-27

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

George E. Pake Prize: A Few Challenges in the Evolution of Semiconductor Device/Manufacturing Technology

NASA Astrophysics Data System (ADS)

Doering, Robert

In the early 1980s, the semiconductor industry faced the related challenges of ``scaling through the one-micron barrier'' and converting single-level-metal NMOS integrated circuits to multi-level-metal CMOS. Multiple advances in lithography technology and device materials/process integration led the way toward the deep-sub-micron transistors and interconnects that characterize today's electronic chips. In the 1990s, CMOS scaling advanced at an accelerated pace enabled by rapid advances in many aspects of optical lithography. However, the industry also needed to continue the progress in manufacturing on ever-larger silicon wafers to maintain economy-of-scale trends. Simultaneously, the increasing complexity and absolute-precision requirements of manufacturing compounded the necessity for new processes, tools, and control methodologies. This talk presents a personal perspective on some of the approaches that addressed the aforementioned challenges. In particular, early work on integrating silicides, lightly-doped-drain FETs, shallow recessed isolation, and double-level metal will be discussed. In addition, some pioneering efforts in deep-UV lithography and single-wafer processing will be covered. The latter will be mainly based on results from the MMST Program - a 100 M +, 5-year R&D effort, funded by DARPA, the U.S. Air Force, and Texas Instruments, that developed a wide range of new technologies for advanced semiconductor manufacturing. The major highlight of the program was the demonstration of sub-3-day cycle time for manufacturing 350-nm CMOS integrated circuits in 1993. This was principally enabled by the development of: (1) 100% single-wafer processing, including rapid-thermal processing (RTP), and (2) computer-integrated-manufacturing (CIM), including real-time, in-situ process control.

Heterogeneous Silicon III-V Mode-Locked Lasers

NASA Astrophysics Data System (ADS)

Davenport, Michael Loehrlein

Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

Pentacene-based organic thin film transistors, integrated circuits, and active matrix displays on polymeric substrates

NASA Astrophysics Data System (ADS)

Sheraw, Christopher Duncan

2003-10-01

Organic thin film transistors are attractive candidates for a variety of low cost, large area commercial electronics including smart cards, RF identification tags, and flat panel displays. Of particular interest are high performance organic thin film transistors (TFTs) that can be fabricated on flexible polymeric substrates allowing low-cost, lightweight, rugged electronics such as flexible active matrix displays. This thesis reports pentacene organic thin film transistors fabricated on flexible polymeric substrates with record performance, the fastest photolithographically patterned organic TFT integrated circuits on polymeric substrates reported to date, and the fabrication of the organic TFT backplanes used to build the first organic TFT-driven active matrix liquid crystal display (AMLCD), also the first AMLCD on a flexible substrate, ever reported. In addition, the first investigation of functionalized pentacene derivatives used as the active layer in organic thin film transistors is reported. A low temperature (<110°C) process technology was developed allowing the fabrication of high performance organic TFTs, integrated circuits, and large TFT arrays on flexible polymeric substrates. This process includes the development of a novel water-based photolithographic active layer patterning process using polyvinyl alcohol that allows the patterning of organic semiconductor materials for elimination of active layer leakage current without causing device degradation. The small molecule aromatic hydrocarbon pentacene was used as the active layer material to fabricate organic TFTs on the polymeric material polyethylene naphthalate with field-effect mobility as large as 2.1 cm2/V-s and on/off current ratio of 108. These are the best values reported for organic TFTs on polymeric substrates and comparable to organic TFTs on rigid substrates. Analog and digital integrated circuits were also fabricated on polymeric substrates using pentacene TFTs with propagation delay as low as 38 musec and clocked digital circuits that operated at 1.1 kHz. These are the fastest photolithographically patterned organic TFT circuits on polymeric substrates reported to date. Finally, 16 x 16 pentacene TFT pixel arrays were fabricated on polymeric substrates and integrated with polymer dispersed liquid crystal to build an AMLCD. The pixel arrays showed good optical response to changing data signals when standard quarter-VGA display waveforms were applied. This result marks the first organic TFT-driven active matrix liquid crystal display ever reported as well as the first active matrix liquid crystal display on a flexible polymeric substrate. Lastly, functionalized pentacene derivatives were used as the active layer in organic thin film transistor materials. Functional groups were added to the pentacene molecule to influence the molecular ordering so that the amount of pi-orbital overlap would be increased allowing the potential for improved field-effect mobility. The functionalization of these materials also improves solubility allowing for the possibility of solution-processed devices and increased oxidative stability. Organic thin film transistors were fabricated using five different functionalized pentacene active layers. Devices based on the pentacene derivative triisopropylsilyl pentacene were found to have the best performance with field-effect mobility as large as 0.4 cm 2/V-s.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

NASA Technical Reports Server (NTRS)

Johnston, Allan H.; Rax, Bernard G.

2006-01-01

This paper discusses mechanisms and circuit-related factors that affect the degradation of linear integrated circuits from radiation in space. For some circuits there is sufficient degradation to affect performance at total dose levels below 4 krad(Si) because the circuit design techniques require higher gain for the pnp transistors that are the most sensitive to radiation. Qualification methods are recommended that include displacement damage as well as ionization damage.

New ultraportable display technology and applications

NASA Astrophysics Data System (ADS)

Alvelda, Phillip; Lewis, Nancy D.

1998-08-01

MicroDisplay devices are based on a combination of technologies rooted in the extreme integration capability of conventionally fabricated CMOS active-matrix liquid crystal display substrates. Customized diffraction grating and optical distortion correction technology for lens-system compensation allow the elimination of many lenses and systems-level components. The MicroDisplay Corporation's miniature integrated information display technology is rapidly leading to many new defense and commercial applications. There are no moving parts in MicroDisplay substrates, and the fabrication of the color generating gratings, already part of the CMOS circuit fabrication process, is effectively cost and manufacturing process-free. The entire suite of the MicroDisplay Corporation's technologies was devised to create a line of application- specific integrated circuit single-chip display systems with integrated computing, memory, and communication circuitry. Next-generation portable communication, computer, and consumer electronic devices such as truly portable monitor and TV projectors, eyeglass and head mounted displays, pagers and Personal Communication Services hand-sets, and wristwatch-mounted video phones are among the may target commercial markets for MicroDisplay technology. Defense applications range from Maintenance and Repair support, to night-vision systems, to portable projectors for mobile command and control centers.

Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

2017-12-01

In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

Microwave GaAs Integrated Circuits On Quartz Substrates

NASA Technical Reports Server (NTRS)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

PubMed

Yu, Lili; El-Damak, Dina; Radhakrishna, Ujwal; Ling, Xi; Zubair, Ahmad; Lin, Yuxuan; Zhang, Yuhao; Chuang, Meng-Hsi; Lee, Yi-Hsien; Antoniadis, Dimitri; Kong, Jing; Chandrakasan, Anantha; Palacios, Tomas

2016-10-12

Two-dimensional electronics based on single-layer (SL) MoS 2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS 2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS 2 FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc-dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library that is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

ISITE: Automatic Circuit Synthesis for Double-Metal CMOS VLSI (Very Large Scale Integrated) Circuits

DTIC Science & Technology

1989-12-01

rows and columns should be minimized. There are two methodologies for achieving this objective, namely, logic minimization to I I I 15 I A B C D E T...type and N-type polysilicon (Figure 2.5( b )) and interconnecting the gates with metal at a later I processing step. The two layers of aluminum available...polysiliconI ...... .. ... .. .. . .. ... .. ... .. I N polysilicon Iii~~iiiiiiii~~iiiiii (a) ( b ) 3 Figure 2.5. Controlling the Threshold Voltage in

Implementation of a noise reduction circuit for spaceflight IR spectrometers

NASA Technical Reports Server (NTRS)

Ramirez, L.; Hickok, R.; Pain, B.; Staller, C.

1992-01-01

The paper discusses the implementation and analysis of a correlated triple sampling circuit using analog subtractor/integrators. The software and test setup for noise measurements are also described. The correlation circuitry is part of the signal chain for a 256-element InSb line array used in the Visible and Infrared Mapping Spectrometer. Using a focal-plane array (FPA) simulator, system noise measurements of 0.7 DN are obtained. A test setup for FPA/SPE (signal processing electronics) characterization along with noise measurements is demonstrated.

Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

PubMed

Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

2011-02-22

Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

Hippocampal-medial prefrontal circuit supports memory updating during learning and post-encoding rest

PubMed Central

Schlichting, Margaret L.; Preston, Alison R.

2015-01-01

Learning occurs in the context of existing memories. Encountering new information that relates to prior knowledge may trigger integration, whereby established memories are updated to incorporate new content. Here, we provide a critical test of recent theories suggesting hippocampal (HPC) and medial prefrontal (MPFC) involvement in integration, both during and immediately following encoding. Human participants with established memories for a set of initial (AB) associations underwent fMRI scanning during passive rest and encoding of new related (BC) and unrelated (XY) pairs. We show that HPC-MPFC functional coupling during learning was more predictive of trial-by-trial memory for associations related to prior knowledge relative to unrelated associations. Moreover, the degree to which HPC-MPFC functional coupling was enhanced following overlapping encoding was related to memory integration behavior across participants. We observed a dissociation between anterior and posterior MPFC, with integration signatures during post-encoding rest specifically in the posterior subregion. These results highlight the persistence of integration signatures into post-encoding periods, indicating continued processing of interrelated memories during rest. We also interrogated the coherence of white matter tracts to assess the hypothesis that integration behavior would be related to the integrity of the underlying anatomical pathways. Consistent with our predictions, more coherent HPC-MPFC white matter structure was associated with better performance across participants. This HPC-MPFC circuit also interacted with content-sensitive visual cortex during learning and rest, consistent with reinstatement of prior knowledge to enable updating. These results show that the HPC-MPFC circuit supports on- and offline integration of new content into memory. PMID:26608407

Removal of Gross Air Embolization from Cardiopulmonary Bypass Circuits with Integrated Arterial Line Filters: A Comparison of Circuit Designs.

PubMed

Reagor, James A; Holt, David W

2016-03-01

Advances in technology, the desire to minimize blood product transfusions, and concerns relating to inflammatory mediators have lead many practitioners and manufacturers to minimize cardiopulmonary bypass (CBP) circuit designs. The oxygenator and arterial line filter (ALF) have been integrated into one device as a method of attaining a reduction in prime volume and surface area. The instructions for use of a currently available oxygenator with integrated ALF recommends incorporating a recirculation line distal to the oxygenator. However, according to an unscientific survey, 70% of respondents utilize CPB circuits incorporating integrated ALFs without a path of recirculation distal to the oxygenator outlet. Considering this circuit design, the ability to quickly remove a gross air bolus in the blood path distal to the oxygenator may be compromised. This in vitro study was designed to determine if the time required to remove a gross air bolus from a CPB circuit without a path of recirculation distal to the oxygenator will be significantly longer than that of a circuit with a path of recirculation distal to the oxygenator. A significant difference was found in the mean time required to remove a gross air bolus between the circuit designs (p = .0003). Additionally, There was found to be a statistically significant difference in the mean time required to remove a gross air bolus between Trial 1 and Trials 4 (p = .015) and 5 (p =.014) irrespective of the circuit design. Under the parameters of this study, a recirculation line distal to an oxygenator with an integrated ALF significantly decreases the time it takes to remove an air bolus from the CPB circuit and may be safer for clinical use than the same circuit without a recirculation line.

A novel high performance ESD power clamp circuit with a small area

NASA Astrophysics Data System (ADS)

Zhaonian, Yang; Hongxia, Liu; Li, Li; Qingqing, Zhuo

2012-09-01

A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. The special structure overcomes other shortcomings in this clamp circuit. Under fast power-up events, the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events, the special structure can keep the clamp MOSFET thoroughly off. Under a falsely triggered event, the special structure can turn off the clamp MOSFET in a short time. The clamp circuit can also reject the power supply noise effectively. Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns/1.8 V power-up, maintains a 1.2 μs delay time and a 2.14 μs turn-off time, and reduces to about 70% of the RC time constant. It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits.

Nonlinear relaxation algorithms for circuit simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saleh, R.A.

Circuit simulation is an important Computer-Aided Design (CAD) tool in the design of Integrated Circuits (IC). However, the standard techniques used in programs such as SPICE result in very long computer-run times when applied to large problems. In order to reduce the overall run time, a number of new approaches to circuit simulation were developed and are described. These methods are based on nonlinear relaxation techniques and exploit the relative inactivity of large circuits. Simple waveform-processing techniques are described to determine the maximum possible speed improvement that can be obtained by exploiting this property of large circuits. Three simulation algorithmsmore » are described, two of which are based on the Iterated Timing Analysis (ITA) method and a third based on the Waveform-Relaxation Newton (WRN) method. New programs that incorporate these techniques were developed and used to simulate a variety of industrial circuits. The results from these simulations are provided. The techniques are shown to be much faster than the standard approach. In addition, a number of parallel aspects of these algorithms are described, and a general space-time model of parallel-task scheduling is developed.« less

HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

NASA Astrophysics Data System (ADS)

Gormley, Colin; Boyle, Anne; Srigengan, Viji; Blackstone, Scott C.

2000-08-01

Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

A programmable microsystem using system-on-chip for real-time biotelemetry.

PubMed

Wang, Lei; Johannessen, Erik A; Hammond, Paul A; Cui, Li; Reid, Stuart W J; Cooper, Jonathan M; Cumming, David R S

2005-07-01

A telemetry microsystem, including multiple sensors, integrated instrumentation and a wireless interface has been implemented. We have employed a methodology akin to that for System-on-Chip microelectronics to design an integrated circuit instrument containing several "intellectual property" blocks that will enable convenient reuse of modules in future projects. The present system was optimized for low-power and included mixed-signal sensor circuits, a programmable digital system, a feedback clock control loop and RF circuits integrated on a 5 mm x 5 mm silicon chip using a 0.6 microm, 3.3 V CMOS process. Undesirable signal coupling between circuit components has been investigated and current injection into sensitive instrumentation nodes was minimized by careful floor-planning. The chip, the sensors, a magnetic induction-based transmitter and two silver oxide cells were packaged into a 36 mm x 12 mm capsule format. A base station was built in order to retrieve the data from the microsystem in real-time. The base station was designed to be adaptive and timing tolerant since the microsystem design was simplified to reduce power consumption and size. The telemetry system was found to have a packet error rate of 10(-3) using an asynchronous simplex link. Trials in animal carcasses were carried out to show that the transmitter was as effective as a conventional RF device whilst consuming less power.

Technical Reliability Studies. EOS/ESD Technology Abstracts

DTIC Science & Technology

1982-01-01

RESISTANT BIPOLAR TRANSISTOR DESIGN AND ITS APPLICATIONS TO LINEAR INTEGRATED CIRCUITS 16145 MODULE ELECTROSTATIC DISCHARGE SIMULATOR 15786 SOME...T.M. 16476 STATIC DISCHARGE MODELING TECHNIQUES FOR EVALUATION OF INTEGRATED (FET) CIRCUIT DESTRUCTION 16145 MODULE ELECTAOSTATIC DISCHARGE SIMULATOR...PLASTIC LSI CIRCUITS PRklE, L.A., II 16145 MODULE ELECTROSTATIC DISCHARGE SIMULATOR PRICE, R.D. 13455 EVALUATION OF PLASTIC LSI CIRCUITS PSHAENICH, A

Silicon millimetre-wave integrated-circuit (SIMMWIC) SPST switch

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-10-01

The first silicon millimetre-wave integrated circuit (SIMMWIC) has been successfully fabricated. This circuit is a monolithic SPST switch with a 3 dB bandwidth of 20 percent and a minimum isolation of 21.6 dB across the band (centre frequency is 36.75 GHz). This monolithic circuit is a low-cost reproducible building block for all millimetre-wave control applications.

Path programmable logic: A structured design method for digital and/or mixed analog integrated circuits

NASA Technical Reports Server (NTRS)

Taylor, B.

1990-01-01

The design of Integrated Circuits has evolved past the black art practiced by a few semiconductor companies to a world wide community of users. This was basically accomplished by the development of computer aided design tools which were made available to this community. As the tools matured into different components of the design task they were accepted into the community at large. However, the next step in this evolution is being ignored by the large tool vendors hindering the continuation of this process. With system level definition and simulation through the logic specification well understood, why is the physical generation so blatantly ignored. This portion of the development is still treated as an isolated task with information being passed from the designer to the layout function. Some form of result given back but it severely lacks full definition of what has transpired. The level of integration in I.C.'s for tomorrow, whether through new processes or applications will require higher speeds, increased transistor density, and non-digital performance which can only be achieved through attention to the physical implementation.

Signals and circuits in the purkinje neuron.

PubMed

Abrams, Zéev R; Zhang, Xiang

2011-01-01

Purkinje neurons (PN) in the cerebellum have over 100,000 inputs organized in an orthogonal geometry, and a single output channel. As the sole output of the cerebellar cortex layer, their complex firing pattern has been associated with motor control and learning. As such they have been extensively modeled and measured using tools ranging from electrophysiology and neuroanatomy, to dynamic systems and artificial intelligence methods. However, there is an alternative approach to analyze and describe the neuronal output of these cells using concepts from electrical engineering, particularly signal processing and digital/analog circuits. By viewing the PN as an unknown circuit to be reverse-engineered, we can use the tools that provide the foundations of today's integrated circuits and communication systems to analyze the Purkinje system at the circuit level. We use Fourier transforms to analyze and isolate the inherent frequency modes in the PN and define three unique frequency ranges associated with the cells' output. Comparing the PN to a signal generator that can be externally modulated adds an entire level of complexity to the functional role of these neurons both in terms of data analysis and information processing, relying on Fourier analysis methods in place of statistical ones. We also re-describe some of the recent literature in the field, using the nomenclature of signal processing. Furthermore, by comparing the experimental data of the past decade with basic electronic circuitry, we can resolve the outstanding controversy in the field, by recognizing that the PN can act as a multivibrator circuit.

Demonstration of Inexact Computing Implemented in the JPEG Compression Algorithm using Probabilistic Boolean Logic applied to CMOS Components

DTIC Science & Technology

2015-12-24

Signal to Noise Ratio SPICE Simulation Program with Integrated Circuit Emphasis TIFF Tagged Image File Format USC University of Southern California xvii...sources can create errors in digital circuits. These effects can be simulated using Simulation Program with Integrated Circuit Emphasis ( SPICE ) or...compute summary statistics. 4.1 Circuit Simulations Noisy analog circuits can be simulated in SPICE or Cadence SpectreTM software via noisy voltage

Conformation-based signal transfer and processing at the single-molecule level

NASA Astrophysics Data System (ADS)

Li, Chao; Wang, Zhongping; Lu, Yan; Liu, Xiaoqing; Wang, Li

2017-11-01

Building electronic components made of individual molecules is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of molecular devices and circuits for signal transmission and processing at room temperature has proven challenging. Here, we present room-temperature intermolecular signal transfer and processing using SnCl2Pc molecules on a Cu(100) surface. The in-plane orientations of the molecules are effectively coupled via intermolecular interaction and serve as the information carrier. In the coupled molecular arrays, the signal can be transferred from one molecule to another in the in-plane direction along predesigned routes and processed to realize logical operations. These phenomena enable the use of molecules displaying intrinsic bistable states as complex molecular devices and circuits with novel functions.

Design of the small pixel pitch ROIC

NASA Astrophysics Data System (ADS)

Liang, Qinghua; Jiang, Dazhao; Chen, Honglei; Zhai, Yongcheng; Gao, Lei; Ding, Ruijun

2014-11-01

Since the technology trend of the third generation IRFPA towards resolution enhancing has steadily progressed,the pixel pitch of IRFPA has been greatly reduced.A 640×512 readout integrated circuit(ROIC) of IRFPA with 15μm pixel pitch is presented in this paper.The 15μm pixel pitch ROIC design will face many challenges.As we all known,the integrating capacitor is a key performance parameter when considering pixel area,charge capacity and dynamic range,so we adopt the effective method of 2 by 2 pixels sharing an integrating capacitor to solve this problem.The input unit cell architecture will contain two paralleled sample and hold parts,which not only allow the FPA to be operated in full frame snapshot mode but also save relatively unit circuit area.Different applications need more matching input unit circuits. Because the dimension of 2×2 pixels is 30μm×30μm, an input stage based on direct injection (DI) which has medium injection ratio and small layout area is proved to be suitable for middle wave (MW) while BDI with three-transistor cascode amplifier for long wave(LW). By adopting the 0.35μm 2P4M mixed signal process, the circuit architecture can make the effective charge capacity of 7.8Me- per pixel with 2.2V output range for MW and 7.3 Me- per pixel with 2.6V output range for LW. According to the simulation results, this circuit works well under 5V power supply and achieves less than 0.1% nonlinearity.

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

NASA Technical Reports Server (NTRS)

DeGregorio, Kelly; Wilson, Dale G.

2009-01-01

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

PubMed

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, C.; Boshier, M. G.

An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through theirmore » electric polarizability. Moreover, the source of coherent matter waves is a Bose–Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry.« less

Integrated testing system FiTest for diagnosis of PCBA

NASA Astrophysics Data System (ADS)

Bogdan, Arkadiusz; Lesniak, Adam

2016-12-01

This article presents the innovative integrated testing system FiTest for automatic, quick inspection of printed circuit board assemblies (PCBA) manufactured in Surface Mount Technology (SMT). Integration of Automatic Optical Inspection (AOI), In-Circuit Tests (ICT) and Functional Circuit Tests (FCT) resulted in universal hardware platform for testing variety of electronic circuits. The platform provides increased test coverage, decreased level of false calls and optimization of test duration. The platform is equipped with powerful algorithms performing tests in a stable and repetitive way and providing effective management of diagnosis.

Circuit-Host Coupling Induces Multifaceted Behavioral Modulations of a Gene Switch.

PubMed

Blanchard, Andrew E; Liao, Chen; Lu, Ting

2018-02-06

Quantitative modeling of gene circuits is fundamentally important to synthetic biology, as it offers the potential to transform circuit engineering from trial-and-error construction to rational design and, hence, facilitates the advance of the field. Currently, typical models regard gene circuits as isolated entities and focus only on the biochemical processes within the circuits. However, such a standard paradigm is getting challenged by increasing experimental evidence suggesting that circuits and their host are intimately connected, and their interactions can potentially impact circuit behaviors. Here we systematically examined the roles of circuit-host coupling in shaping circuit dynamics by using a self-activating gene switch as a model circuit. Through a combination of deterministic modeling, stochastic simulation, and Fokker-Planck equation formalism, we found that circuit-host coupling alters switch behaviors across multiple scales. At the single-cell level, it slows the switch dynamics in the high protein production regime and enlarges the difference between stable steady-state values. At the population level, it favors cells with low protein production through differential growth amplification. Together, the two-level coupling effects induce both quantitative and qualitative modulations of the switch, with the primary component of the effects determined by the circuit's architectural parameters. This study illustrates the complexity and importance of circuit-host coupling in modulating circuit behaviors, demonstrating the need for a new paradigm-integrated modeling of the circuit-host system-for quantitative understanding of engineered gene networks. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Flexible Microstrip Circuits for Superconducting Electronics

NASA Technical Reports Server (NTRS)

Chervenak, James; Mateo, Jennette

2013-01-01

Flexible circuits with superconducting wiring atop polyimide thin films are being studied to connect large numbers of wires between stages in cryogenic apparatus with low heat load. The feasibility of a full microstrip process, consisting of two layers of superconducting material separated by a thin dielectric layer on 5 mil (approximately 0.13 mm) Kapton sheets, where manageable residual stress remains in the polyimide film after processing, has been demonstrated. The goal is a 2-mil (approximately 0.051-mm) process using spin-on polyimide to take advantage of the smoother polyimide surface for achieving highquality metal films. Integration of microstrip wiring with this polyimide film may require high-temperature bakes to relax the stress in the polyimide film between metallization steps.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, Kedar G.; Pannu, Satinderpall S.

An integrated circuit system having an integrated circuit (IC) component which is able to have its functionality destroyed upon receiving a command signal. The system may involve a substrate with the IC component being supported on the substrate. A module may be disposed in proximity to the IC component. The module may have a cavity and a dissolving compound in a solid form disposed in the cavity. A heater component may be configured to heat the dissolving compound to a point of sublimation where the dissolving compound changes from a solid to a gaseous dissolving compound. A triggering mechanism maymore » be used for initiating a dissolution process whereby the gaseous dissolving compound is allowed to attack the IC component and destroy a functionality of the IC component.« less

Monolithic integration of GMR sensors for standard CMOS-IC current sensing

NASA Astrophysics Data System (ADS)

De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

2017-09-01

In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

Weather satellite picture receiving stations, APT digital scan converter

NASA Technical Reports Server (NTRS)

Vermillion, C. H.; Kamowski, J. C.

1975-01-01

The automatic picture transmission digital scan converter is used at ground stations to convert signals received from scanning radiometers to data compatible with ground equipment designed to receive signals from vidicons aboard operational meteorological satellites. Information necessary to understand the circuit theory, functional operation, general construction and calibration of the converter is provided. Brief and detailed descriptions of each of the individual circuits are included, accompanied by a schematic diagram contained at the end of each circuit description. Listings of integral parts and testing equipment required as well as an overall wiring diagram are included. This unit will enable the user to readily accept and process weather photographs from the operational meteorological satellites.

Simplifying the circuit of Josephson parametric converters

NASA Astrophysics Data System (ADS)

Abdo, Baleegh; Brink, Markus; Chavez-Garcia, Jose; Keefe, George

Josephson parametric converters (JPCs) are quantum-limited three-wave mixing devices that can play various important roles in quantum information processing in the microwave domain, including amplification of quantum signals, transduction of quantum information, remote entanglement of qubits, nonreciprocal amplification, and circulation of signals. However, the input-output and biasing circuit of a state-of-the-art JPC consists of bulky components, i.e. two commercial off-chip broadband 180-degree hybrids, four phase-matched short coax cables, and one superconducting magnetic coil. Such bulky hardware significantly hinders the integration of JPCs in scalable quantum computing architectures. In my talk, I will present ideas on how to simplify the JPC circuit and show preliminary experimental results

Portable Cytometry Using Microscale Electronic Sensing

PubMed Central

Emaminejad, Sam; Paik, Kee-Hyun; Tabard-Cossa, Vincent; Javanmard, Mehdi

2015-01-01

In this manuscript, we present three different micro-impedance sensing architectures for electronic counting of cells and beads. The first method of sensing is based on using an open circuit sensing electrode integrated in a micro-pore, which measures the shift in potential as a micron-sized particle passes through. Our micro-pore, based on a funnel shaped microchannel, was fabricated in PDMS and was bound covalently to a glass substrate patterned with a gold open circuit electrode. The amplification circuitry was integrated onto a battery-powered custom printed circuit board. The second method is based on a three electrode differential measurement, which opens up the potential of using signal processing techniques to increase signal to noise ratio post measurement. The third architecture uses a contactless sensing approach, which significantly minimizes the cost of the consumable component of the impedance cytometer. We demonstrated proof of concept for the three sensing architectures by measuring the detected signal due to the passage of micron sized beads through the pore. PMID:27647950

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

NASA Astrophysics Data System (ADS)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Minimizing the area required for time constants in integrated circuits

NASA Technical Reports Server (NTRS)

Lyons, J. C.

1972-01-01

When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

Process control systems: integrated for future process technologies

NASA Astrophysics Data System (ADS)

Botros, Youssry; Hajj, Hazem M.

2003-06-01

Process Control Systems (PCS) are becoming more crucial to the success of Integrated Circuit makers due to their direct impact on product quality, cost, and Fab output. The primary objective of PCS is to minimize variability by detecting and correcting non optimal performance. Current PCS implementations are considered disparate, where each PCS application is designed, deployed and supported separately. Each implementation targets a specific area of control such as equipment performance, wafer manufacturing, and process health monitoring. With Intel entering the nanometer technology era, tighter process specifications are required for higher yields and lower cost. This requires areas of control to be tightly coupled and integrated to achieve the optimal performance. This requirement can be achieved via consistent design and deployment of the integrated PCS. PCS integration will result in several benefits such as leveraging commonalities, avoiding redundancy, and facilitating sharing between implementations. This paper will address PCS implementations and focus on benefits and requirements of the integrated PCS. Intel integrated PCS Architecture will be then presented and its components will be briefly discussed. Finally, industry direction and efforts to standardize PCS interfaces that enable PCS integration will be presented.

Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

NASA Astrophysics Data System (ADS)

Stinner, F. Scott

As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with <10 micros stage delays, and NAND and NOR logic gates. In order to produce higher performance and more consistent transistors, we develop a new hybrid procedure for processing the CdSe nanocrystals. This procedure produces transistors with repeatable performance exceeding 40 cm2/Vs when fabricated on silicon wafers and 16 cm 2/vs when fabricated as part of photopatterned integrated circuits on Kapton substrates. In order to demonstrate the full potential of these transistors, methods to create high-frequency oscillators were developed. These methods allow for transistors to operate at higher voltages as well as provide a means for wirebonding to the Kapton substrate, both of which are required for operating and probing high-frequency oscillators. Simulations of this system show the potential for operation at MHz frequencies. Demonstration of these transistors in this frequency range would open the door for development of CdSe integrated circuits for high-performance sensor, display, and audio applications. To develop further applications of electronics on flexible substrates, procedures are developed for the integration of polychromatic displays on polyethylene terephthalate (PET) substrates and a commercial near field communication (NFC) link. The device draws its power from the NFC transmitter common on smartphones and eliminates the need for a fixed battery. This allows for the mass deployment of flexible, interactive displays on product packaging.

Electro pneumatic trainer embedded with programmable integrated circuit (PIC) microcontroller and graphical user interface platform for aviation industries training purposes

NASA Astrophysics Data System (ADS)

Burhan, I.; Azman, A. A.; Othman, R.

2016-10-01

An electro pneumatic trainer embedded with programmable integrated circuit (PIC) microcontroller and Visual Basic (VB) platform is fabricated as a supporting tool to existing teaching and learning process, and to achieve the objectives and learning outcomes towards enhancing the student's knowledge and hands-on skill, especially in electro pneumatic devices. The existing learning process for electro pneumatic courses conducted in the classroom does not emphasize on simulation and complex practical aspects. VB is used as the platform for graphical user interface (GUI) while PIC as the interface circuit between the GUI and hardware of electro pneumatic apparatus. Fabrication of electro pneumatic trainer interfacing between PIC and VB has been designed and improved by involving multiple types of electro pneumatic apparatus such as linear drive, air motor, semi rotary motor, double acting cylinder and single acting cylinder. Newly fabricated electro pneumatic trainer microcontroller interface can be programmed and re-programmed for numerous combination of tasks. Based on the survey to 175 student participants, 97% of the respondents agreed that the newly fabricated trainer is user friendly, safe and attractive, and 96.8% of the respondents strongly agreed that there is improvement in knowledge development and also hands-on skill in their learning process. Furthermore, the Lab Practical Evaluation record has indicated that the respondents have improved their academic performance (hands-on skills) by an average of 23.5%.

Quantum information processing with superconducting circuits: a review.

PubMed

Wendin, G

2017-10-01

During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.

Quantum information processing with superconducting circuits: a review

NASA Astrophysics Data System (ADS)

Wendin, G.

2017-10-01

During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.

Antibody-controlled actuation of DNA-based molecular circuits.

PubMed

Engelen, Wouter; Meijer, Lenny H H; Somers, Bram; de Greef, Tom F A; Merkx, Maarten

2017-02-17

DNA-based molecular circuits allow autonomous signal processing, but their actuation has relied mostly on RNA/DNA-based inputs, limiting their application in synthetic biology, biomedicine and molecular diagnostics. Here we introduce a generic method to translate the presence of an antibody into a unique DNA strand, enabling the use of antibodies as specific inputs for DNA-based molecular computing. Our approach, antibody-templated strand exchange (ATSE), uses the characteristic bivalent architecture of antibodies to promote DNA-strand exchange reactions both thermodynamically and kinetically. Detailed characterization of the ATSE reaction allowed the establishment of a comprehensive model that describes the kinetics and thermodynamics of ATSE as a function of toehold length, antibody-epitope affinity and concentration. ATSE enables the introduction of complex signal processing in antibody-based diagnostics, as demonstrated here by constructing molecular circuits for multiplex antibody detection, integration of multiple antibody inputs using logic gates and actuation of enzymes and DNAzymes for signal amplification.

Antibody-controlled actuation of DNA-based molecular circuits

NASA Astrophysics Data System (ADS)

Engelen, Wouter; Meijer, Lenny H. H.; Somers, Bram; de Greef, Tom F. A.; Merkx, Maarten

2017-02-01

DNA-based molecular circuits allow autonomous signal processing, but their actuation has relied mostly on RNA/DNA-based inputs, limiting their application in synthetic biology, biomedicine and molecular diagnostics. Here we introduce a generic method to translate the presence of an antibody into a unique DNA strand, enabling the use of antibodies as specific inputs for DNA-based molecular computing. Our approach, antibody-templated strand exchange (ATSE), uses the characteristic bivalent architecture of antibodies to promote DNA-strand exchange reactions both thermodynamically and kinetically. Detailed characterization of the ATSE reaction allowed the establishment of a comprehensive model that describes the kinetics and thermodynamics of ATSE as a function of toehold length, antibody-epitope affinity and concentration. ATSE enables the introduction of complex signal processing in antibody-based diagnostics, as demonstrated here by constructing molecular circuits for multiplex antibody detection, integration of multiple antibody inputs using logic gates and actuation of enzymes and DNAzymes for signal amplification.

Use of laser drilling in the manufacture of organic inverter circuits.

PubMed

Iba, Shingo; Kato, Yusaku; Sekitani, Tsuyoshi; Kawaguchi, Hiroshi; Sakurai, Takayasu; Someya, Takao

2006-01-01

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO2 laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO2 laser drilling machine, contact resistance can be reduced to as low as 3 ohms for 180 microm square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

The Effects of Space Radiation on Linear Integrated Circuit

NASA Technical Reports Server (NTRS)

Johnston, A.

2000-01-01

Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunctions.

35 GHz integrated circuit rectifying antenna with 33 percent efficiency

NASA Technical Reports Server (NTRS)

Yoo, T.-W.; Chang, K.

1991-01-01

A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

Analog Binaural Circuits for Detecting and Locating Leaks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.

2003-01-01

Very-large-scale integrated (VLSI) analog binaural signal-processing circuits have been proposed for use in detecting and locating leaks that emit noise in the ultrasonic frequency range. These circuits would be designed to function even in the presence of intense lower-frequency background noise that could include sounds associated with flow and pumping. Each of the proposed circuits would include the approximate electronic equivalent of a right and a left cochlea plus correlator circuits. A pair of transducers (microphones or accelerometers), corresponding to right and left ears, would provide the inputs to their respective cochleas from different locations (e.g., from different positions along a pipe). The correlation circuits plus some additional external circuits would determine the difference between the times of arrival of a common leak sound at the two transducers. Then the distance along the pipe from either transducer to the leak could be estimated from the time difference and the speed of sound along the pipe. If three or more pairs of transducers and cochlear/correlator circuits were available and could suitably be positioned, it should be possible to locate a leak in three dimensions by use of sound propagating through air.

Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film.

PubMed

Gao, Pingqi; Zhang, Qing

2014-02-14

Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm(2) V(-1) s(-1), a subthreshold slope as low as 150 mV dec(-1), operating gate voltages less than 2 V, on/off ratios larger than 10(4) and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc.

Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

2016-09-01

We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs <30 Ω/sq). These CuNW TCEs are subsequently hybridized with aluminum-doped zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

Stress redistribution and damage in interconnects caused by electromigration

NASA Astrophysics Data System (ADS)

Chiras, Stefanie Ruth

Electromigration has long been recognized as a phenomenon that induces mass redistribution in metals which, when constrained, can lead to the creation of stress. Since the development of the integrated circuit, electromigration. in interconnects, (the metal lines which carry current between devices in integrated circuits), has become a reliability concern. The primary failure mechanism in the interconnects is usually voiding, which causes electrical resistance increases in the circuit. In some cases, however, another failure mode occurs, fracture of the surrounding dielectric driven by electromigration induced compressive stresses within the interconnect. It is this failure mechanism that is the focus of this thesis. To study dielectric fracture, both residual processing stresses and the development of electromigration induced stress in isolated, constrained interconnects was measured. The high-resolution measurements were made using two types of piezospectroscopy, complemented by finite element analysis (FEA). Both procedures directly measured stress in the underlying or neighboring substrate and used FEA to determine interconnect stresses. These interconnect stresses were related to the effected circuit failure mode through post-test scanning electron microscopy and resistance measurements taken during electromigration testing. The results provide qualitative evidence of electromigration driven passivation fracture, and quantitative analysis of the theoretical model of the failure, the "immortal" interconnect concept.

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Parallel-Processing Equalizers for Multi-Gbps Communications

NASA Technical Reports Server (NTRS)

Gray, Andrew; Ghuman, Parminder; Hoy, Scott; Satorius, Edgar H.

2004-01-01

Architectures have been proposed for the design of frequency-domain least-mean-square complex equalizers that would be integral parts of parallel- processing digital receivers of multi-gigahertz radio signals and other quadrature-phase-shift-keying (QPSK) or 16-quadrature-amplitude-modulation (16-QAM) of data signals at rates of multiple gigabits per second. Equalizers as used here denotes receiver subsystems that compensate for distortions in the phase and frequency responses of the broad-band radio-frequency channels typically used to convey such signals. The proposed architectures are suitable for realization in very-large-scale integrated (VLSI) circuitry and, in particular, complementary metal oxide semiconductor (CMOS) application- specific integrated circuits (ASICs) operating at frequencies lower than modulation symbol rates. A digital receiver of the type to which the proposed architecture applies (see Figure 1) would include an analog-to-digital converter (A/D) operating at a rate, fs, of 4 samples per symbol period. To obtain the high speed necessary for sampling, the A/D and a 1:16 demultiplexer immediately following it would be constructed as GaAs integrated circuits. The parallel-processing circuitry downstream of the demultiplexer, including a demodulator followed by an equalizer, would operate at a rate of only fs/16 (in other words, at 1/4 of the symbol rate). The output from the equalizer would be four parallel streams of in-phase (I) and quadrature (Q) samples.

Highly localized distributed Brillouin scattering response in a photonic integrated circuit

NASA Astrophysics Data System (ADS)

Zarifi, Atiyeh; Stiller, Birgit; Merklein, Moritz; Li, Neuton; Vu, Khu; Choi, Duk-Yong; Ma, Pan; Madden, Stephen J.; Eggleton, Benjamin J.

2018-03-01

The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS) has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.

New readout integrated circuit using continuous time fixed pattern noise correction

NASA Astrophysics Data System (ADS)

Dupont, Bertrand; Chammings, G.; Rapellin, G.; Mandier, C.; Tchagaspanian, M.; Dupont, Benoit; Peizerat, A.; Yon, J. J.

2008-04-01

LETI has been involved in IRFPA development since 1978; the design department (LETI/DCIS) has focused its work on new ROIC architecture since many years. The trend is to integrate advanced functions into the CMOS design to achieve cost efficient sensors production. Thermal imaging market is today more and more demanding of systems with instant ON capability and low power consumption. The purpose of this paper is to present the latest developments of fixed pattern noise continuous time correction. Several architectures are proposed, some are based on hardwired digital processing and some are purely analog. Both are using scene based algorithms. Moreover a new method is proposed for simultaneous correction of pixel offsets and sensitivities. In this scope, a new architecture of readout integrated circuit has been implemented; this architecture is developed with 0.18μm CMOS technology. The specification and the application of the ROIC are discussed in details.

Etching and Growth of GaAs

NASA Technical Reports Server (NTRS)

Seabaugh, A. C.; Mattauch, R., J.

1983-01-01

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

A flexible surface wetness sensor using a RFID technique.

PubMed

Yang, Cheng-Hao; Chien, Jui-Hung; Wang, Bo-Yan; Chen, Ping-Hei; Lee, Da-Sheng

2008-02-01

This paper presents a flexible wetness sensor whose detection signal, converted to a binary code, is transmitted through radio-frequency (RF) waves from a radio-frequency identification integrated circuit (RFID IC) to a remote reader. The flexible sensor, with a fixed operating frequency of 13.56 MHz, contains a RFID IC and a sensor circuit that is fabricated on a flexible printed circuit board (FPCB) using a Micro-Electro-Mechanical-System (MEMS) process. The sensor circuit contains a comb-shaped sensing area surrounded by an octagonal antenna with a width of 2.7 cm. The binary code transmitted from the RFIC to the reader changes if the surface conditions of the detector surface changes from dry to wet. This variation in the binary code can be observed on a digital oscilloscope connected to the reader.

Understanding in an instant: neurophysiological evidence for mechanistic language circuits in the brain.

PubMed

Pulvermüller, Friedemann; Shtyrov, Yury; Hauk, Olaf

2009-08-01

How long does it take the human mind to grasp the idea when hearing or reading a sentence? Neurophysiological methods looking directly at the time course of brain activity indexes of comprehension are critical for finding the answer to this question. As the dominant cognitive approaches, models of serial/cascaded and parallel processing, make conflicting predictions on the time course of psycholinguistic information access, they can be tested using neurophysiological brain activation recorded in MEG and EEG experiments. Seriality and cascading of lexical, semantic and syntactic processes receives support from late (latency approximately 1/2s) sequential neurophysiological responses, especially N400 and P600. However, parallelism is substantiated by early near-simultaneous brain indexes of a range of psycholinguistic processes, up to the level of semantic access and context integration, emerging already 100-250ms after critical stimulus information is present. Crucially, however, there are reliable latency differences of 20-50ms between early cortical area activations reflecting lexical, semantic and syntactic processes, which are left unexplained by current serial and parallel brain models of language. We here offer a mechanistic model grounded in cortical nerve cell circuits that builds upon neuroanatomical and neurophysiological knowledge and explains both near-simultaneous activations and fine-grained delays. A key concept is that of discrete distributed cortical circuits with specific inter-area topographies. The full activation, or ignition, of specifically distributed binding circuits explains the near-simultaneity of early neurophysiological indexes of lexical, syntactic and semantic processing. Activity spreading within circuits determined by between-area conduction delays accounts for comprehension-related regional activation differences in the millisecond range.

Development of analog watch with minute repeater

NASA Astrophysics Data System (ADS)

Okigami, Tomio; Aoyama, Shigeru; Osa, Takashi; Igarashi, Kiyotaka; Ikegami, Tomomi

A complementary metal oxide semiconductor with large scale integration was developed for an electronic minute repeater. It is equipped with the synthetic struck sound circuit to generate natural struck sound necessary for the minute repeater. This circuit consists of an envelope curve drawing circuit, frequency mixer, polyphonic mixer, and booster circuit made by using analog circuit technology. This large scale integration is a single chip microcomputer with motor drivers and input ports in addition to the synthetic struck sound circuit, and it is possible to make an electronic system of minute repeater at a very low cost in comparison with the conventional type.

Analysis of the capability to effectively design complementary metal oxide semiconductor integrated circuits

NASA Astrophysics Data System (ADS)

McConkey, M. L.

1984-12-01

A complete CMOS/BULK design cycle has been implemented and fully tested to evaluate its effectiveness and a viable set of computer-aided design tools for the layout, verification, and simulation of CMOS/BULK integrated circuits. This design cycle is good for p-well, n-well, or twin-well structures, although current fabrication technique available limit this to p-well only. BANE, an integrated layout program from Stanford, is at the center of this design cycle and was shown to be simple to use in the layout of CMOS integrated circuits (it can be also used to layout NMOS integrated circuits). A flowchart was developed showing the design cycle from initial layout, through design verification, and to circuit simulation using NETLIST, PRESIM, and RNL from the University of Washington. A CMOS/BULK library was designed and includes logic gates that were designed and completely tested by following this flowchart. Also designed was an arithmetic logic unit as a more complex test of the CMOS/BULK design cycle.

Advantages of comparative studies in songbirds to understand the neural basis of sensorimotor integration.

PubMed

Murphy, Karagh; James, Logan S; Sakata, Jon T; Prather, Jonathan F

2017-08-01

Sensorimotor integration is the process through which the nervous system creates a link between motor commands and associated sensory feedback. This process allows for the acquisition and refinement of many behaviors, including learned communication behaviors such as speech and birdsong. Consequently, it is important to understand fundamental mechanisms of sensorimotor integration, and comparative analyses of this process can provide vital insight. Songbirds offer a powerful comparative model system to study how the nervous system links motor and sensory information for learning and control. This is because the acquisition, maintenance, and control of birdsong critically depend on sensory feedback. Furthermore, there is an incredible diversity of song organizations across songbird species, ranging from songs with simple, stereotyped sequences to songs with complex sequencing of vocal gestures, as well as a wide diversity of song repertoire sizes. Despite this diversity, the neural circuitry for song learning, control, and maintenance remains highly similar across species. Here, we highlight the utility of songbirds for the analysis of sensorimotor integration and the insights about mechanisms of sensorimotor integration gained by comparing different songbird species. Key conclusions from this comparative analysis are that variation in song sequence complexity seems to covary with the strength of feedback signals in sensorimotor circuits and that sensorimotor circuits contain distinct representations of elements in the vocal repertoire, possibly enabling evolutionary variation in repertoire sizes. We conclude our review by highlighting important areas of research that could benefit from increased comparative focus, with particular emphasis on the integration of new technologies. Copyright © 2017 the American Physiological Society.

Multilevel Regulation of Bacterial Gene Expression with the Combined STAR and Antisense RNA System.

PubMed

Lee, Young Je; Kim, Soo-Jung; Moon, Tae Seok

2018-03-16

Synthetic small RNA regulators have emerged as a versatile tool to predictably control bacterial gene expression. Owing to their simple design principles, small size, and highly orthogonal behavior, these engineered genetic parts have been incorporated into genetic circuits. However, efforts to achieve more sophisticated cellular functions using RNA regulators have been hindered by our limited ability to integrate different RNA regulators into complex circuits. Here, we present a combined RNA regulatory system in Escherichia coli that uses small transcription activating RNA (STAR) and antisense RNA (asRNA) to activate or deactivate target gene expression in a programmable manner. Specifically, we demonstrated that the activated target output by the STAR system can be deactivated by expressing two different types of asRNAs: one binds to and sequesters the STAR regulator, affecting the transcription process, while the other binds to the target mRNA, affecting the translation process. We improved deactivation efficiencies (up to 96%) by optimizing each type of asRNA and then integrating the two optimized asRNAs into a single circuit. Furthermore, we demonstrated that the combined STAR and asRNA system can control gene expression in a reversible way and can regulate expression of a gene in the genome. Lastly, we constructed and simultaneously tested two A AND NOT B logic gates in the same cell to show sophisticated multigene regulation by the combined system. Our approach establishes a methodology for integrating multiple RNA regulators to rationally control multiple genes.

Low-power wireless ECG acquisition and classification system for body sensor networks.

PubMed

Lee, Shuenn-Yuh; Hong, Jia-Hua; Hsieh, Cheng-Han; Liang, Ming-Chun; Chang Chien, Shih-Yu; Lin, Kuang-Hao

2015-01-01

A low-power biosignal acquisition and classification system for body sensor networks is proposed. The proposed system consists of three main parts: 1) a high-pass sigma delta modulator-based biosignal processor (BSP) for signal acquisition and digitization, 2) a low-power, super-regenerative on-off keying transceiver for short-range wireless transmission, and 3) a digital signal processor (DSP) for electrocardiogram (ECG) classification. The BSP and transmitter circuits, which are the body-end circuits, can be operated for over 80 days using two 605 mAH zinc-air batteries as the power supply; the power consumption is 586.5 μW. As for the radio frequency receiver and DSP, which are the receiving-end circuits that can be integrated in smartphones or personal computers, power consumption is less than 1 mW. With a wavelet transform-based digital signal processing circuit and a diagnosis control by cardiologists, the accuracy of beat detection and ECG classification are close to 99.44% and 97.25%, respectively. All chips are fabricated in TSMC 0.18-μm standard CMOS process.

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

PubMed Central

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed

2017-01-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz. PMID:28763043

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

PubMed

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

2017-08-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Power system with an integrated lubrication circuit

DOEpatents

Hoff, Brian D [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL; Algrain, Marcelo C [Peoria, IL; Johnson, Kris W [Washington, IL; Lane, William H [Chillicothe, IL

2009-11-10

A power system includes an engine having a first lubrication circuit and at least one auxiliary power unit having a second lubrication circuit. The first lubrication circuit is in fluid communication with the second lubrication circuit.

Low-power integrated-circuit driver for ferrite-memory word lines

NASA Technical Reports Server (NTRS)

Katz, S.

1970-01-01

Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

Aluminum heat sink enables power transistors to be mounted integrally with printed circuit board

NASA Technical Reports Server (NTRS)

Seaward, R. C.

1967-01-01

Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.

77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-04

... Circuit Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... public record for this investigation may be viewed on the Commission's electronic docket (EDIS) at http... certain semiconductor integrated circuit devices and products containing same by reason of infringement of...

Multi-lead heat sink

DOEpatents

Roose, L.D.

1984-07-03

The disclosure relates to a heat sink used to protect integrated circuits from the heat resulting from soldering them to circuit boards. A tubular housing contains a slidable member which engages somewhat inwardly extending connecting rods, each of which is rotatably attached at one end to the bottom of the housing. The other end of each rod is fastened to an expandable coil spring loop. As the member is pushed downward in the housing, its bottom edge engages and forces outward the connecting rods, thereby expanding the spring so that it will fit over an integrated circuit. After the device is in place, the member is slid upward and the spring contracts about the leads of the integrated circuit. Soldering is now conducted and the spring absorbs excess heat therefrom to protect the integrated circuit. The placement steps are repeated in reverse order to remove the heat sink for use again. 4 figs.

Multi-lead heat sink

DOEpatents

Roose, Lars D.

1984-01-01

The disclosure relates to a heat sink used to protect integrated circuits from the heat resulting from soldering them to circuit boards. A tubular housing contains a slidable member which engages somewhat inwardly extending connecting rods, each of which is rotatably attached at one end to the bottom of the housing. The other end of each rod is fastened to an expandable coil spring loop. As the member is pushed downward in the housing, its bottom edge engages and forces outward the connecting rods, thereby expanding the spring so that it will fit over an integrated circuit. After the device is in place, the member is slid upward and the spring contracts about the leads of the integrated circuit. Soldering is now conducted and the spring absorbs excess heat therefrom to protect the integrated circuit. The placement steps are repeated in reverse order to remove the heat sink for use again.

Multi-lead heat sink

DOEpatents

Roose, L.D.

1982-08-25

The disclosure relates to a heat sink used to protect integrated circuits from the heat resulting from soldering them to circuit boards. A tubular housing contains a slidable member which engages somewhat inwardly extending connecting rods, each of which is rotatably attached at one end to the bottom of the housing. The other end of each rod is fastened to an expandable coil spring loop. As the member is pushed downward in the housing, its bottom edge engages and forces outward the connecting rods, thereby expanding the spring so that it will fit over an integrated circuit. After the device is in place, the member is slid upward and the spring contracts about the leads of the integrated circuit. Soldering is now conducted and the spring absorbs excess heat therefrom to protect the integrated circuit. The placement steps are repeated in reverse order to remove the heat sink for use again.

Integrated, nonvolatile, high-speed analog random access memory

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

1994-01-01

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

A two-channel, spectrally degenerate polarization entangled source on chip

NASA Astrophysics Data System (ADS)

Sansoni, Linda; Luo, Kai Hong; Eigner, Christof; Ricken, Raimund; Quiring, Viktor; Herrmann, Harald; Silberhorn, Christine

2017-12-01

Integrated optics provides the platform for the experimental implementation of highly complex and compact circuits for quantum information applications. In this context integrated waveguide sources represent a powerful resource for the generation of quantum states of light due to their high brightness and stability. However, the confinement of the light in a single spatial mode limits the realization of multi-channel sources. Due to this challenge one of the most adopted sources in quantum information processes, i.e. a source which generates spectrally indistinguishable polarization entangled photons in two different spatial modes, has not yet been realized in a fully integrated platform. Here we overcome this limitation by suitably engineering two periodically poled waveguides and an integrated polarization splitter in lithium niobate. This source produces polarization entangled states with fidelity of F = 0.973 ±0.003 and a test of Bell's inequality results in a violation larger than 14 standard deviations. It can work both in pulsed and continuous wave regime. This device represents a new step toward the implementation of fully integrated circuits for quantum information applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oler, Kiri J.; Miller, Carl H.

In this paper, we present a methodology for reverse engineering integrated circuits, including a mathematical verification of a scalable algorithm used to generate minimal finite state machine representations of integrated circuits.

Automated processing of dynamic properties of intraventricular pressure by computer program and electronic circuit.

PubMed

Adler, D; Mahler, Y

1980-04-01

A procedure for automatic detection and digital processing of the maximum first derivative of the intraventricular pressure (dp/dtmax), time to dp/dtmax(t - dp/dt) and beat-to-beat intervals have been developed. The procedure integrates simple electronic circuits with a short program using a simple algorithm for the detection of the points of interest. The tasks of differentiating the pressure signal and detecting the onset of contraction were done by electronics, while the tasks of finding the values of dp/dtmax, t - dp/dt, beat-to-beat intervals and all computations needed were done by software. Software/hardware 'trade off' considerations and the accuracy and reliability of the system are discussed.

Image processing using Gallium Arsenide (GaAs) technology

NASA Technical Reports Server (NTRS)

Miller, Warner H.

1989-01-01

The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

Interferometric surface mapping with variable sensitivity.

PubMed

Jaerisch, W; Makosch, G

1978-03-01

In the photolithographic process, presently employed for the production of integrated circuits, sets of correlated masks are used for exposing the photoresist on silicon wafers. Various sets of masks which are printed in different printing tools must be aligned correctly with respect to the structures produced on the wafer in previous process steps. Even when perfect alignment is considered, displacements and distortions of the printed wafer patterns occur. They are caused by imperfections of the printing tools or/and wafer deformations resulting from high temperature processes. Since the electrical properties of the final integrated circuits and therefore the manufacturing yield depend to a great extent on the precision at which such patterns are superimposed, simple and fast overlay measurements and flatness measurements as well are very important in IC-manufacturing. A simple optical interference method for flatness measurements will be described which can be used under manufacturing conditions. This method permits testing of surface height variations by nearly grazing light incidence by absence of a physical reference plane. It can be applied to polished surfaces and rough surfaces as well.

System-Level Integrated Circuit (SLIC) development for phased array antenna applications

NASA Technical Reports Server (NTRS)

Shalkhauser, K. A.; Raquet, C. A.

1991-01-01

A microwave/millimeter wave system-level integrated circuit (SLIC) being developed for use in phased array antenna applications is described. The program goal is to design, fabricate, test, and deliver an advanced integrated circuit that merges radio frequency (RF) monolithic microwave integrated circuit (MMIC) technologies with digital, photonic, and analog circuitry that provide control, support, and interface functions. As a whole, the SLIC will offer improvements in RF device performance, uniformity, and stability while enabling accurate, rapid, repeatable control of the RF signal. Furthermore, the SLIC program addresses issues relating to insertion of solid state devices into antenna systems, such as the reduction in number of bias, control, and signal lines. Program goals, approach, and status are discussed.

System-level integrated circuit (SLIC) development for phased array antenna applications

NASA Technical Reports Server (NTRS)

Shalkhauser, K. A.; Raquet, C. A.

1991-01-01

A microwave/millimeter wave system-level integrated circuit (SLIC) being developed for use in phased array antenna applications is described. The program goal is to design, fabricate, test, and deliver an advanced integrated circuit that merges radio frequency (RF) monolithic microwave integrated circuit (MMIC) technologies with digital, photonic, and analog circuitry that provide control, support, and interface functions. As a whole, the SLIC will offer improvements in RF device performance, uniformity, and stability while enabling accurate, rapid, repeatable control of the RF signal. Furthermore, the SLIC program addresses issues relating to insertion of solid state devices into antenna systems, such as the reduction in number of bias, control, and signal lines. Program goals, approach, and status are discussed.

Hybrid stretchable circuits on silicone substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk; Liu, Q.

When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

An Electronics Course Emphasizing Circuit Design

ERIC Educational Resources Information Center

Bergeson, Haven E.

1975-01-01

Describes a one-quarter introductory electronics course in which the students use a variety of inexpensive integrated circuits to design and construct a large number of useful circuits. Presents the subject matter of the course in three parts: linear circuits, digital circuits, and more complex circuits. (GS)

Automated Visual Inspection Of Integrated Circuits

NASA Astrophysics Data System (ADS)

Noppen, G.; Oosterlinck, Andre J.

1989-07-01

One of the major application fields of image processing techniques is the 'visual inspection'. For a number of rea-sons, the automated visual inspection of Integrated Circuits (IC's) has drawn a lot of attention. : Their very strict design makes them very suitable for an automated inspection. : There is already a lot of experience in the comparable Printed Circuit Board (PCB) and mask inspection. : The mechanical handling of wafers and dice is already an established technology. : Military and medical IC's should be a 100 % failproof. : IC inspection gives a high and allinost immediate payback. In this paper we wil try to give an outline of the problems involved in IC inspection, and the algorithms and methods used to overcome these problems. We will not go into de-tail, but we will try to give a general understanding. Our attention will go to the following topics. : An overview of the inspection process, with an emphasis on the second visual inspection. : The problems encountered in IC inspection, as opposed to the comparable PCB and mask inspection. : The image acquisition devices that can be used to obtain 'inspectable' images. : A general overview of the algorithms that can be used. : A short description of the algorithms developed at the ESAT-MI2 division of the katholieke Universiteit Leuven.

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

From Whole-Brain Data to Functional Circuit Models: The Zebrafish Optomotor Response.

PubMed

Naumann, Eva A; Fitzgerald, James E; Dunn, Timothy W; Rihel, Jason; Sompolinsky, Haim; Engert, Florian

2016-11-03

Detailed descriptions of brain-scale sensorimotor circuits underlying vertebrate behavior remain elusive. Recent advances in zebrafish neuroscience offer new opportunities to dissect such circuits via whole-brain imaging, behavioral analysis, functional perturbations, and network modeling. Here, we harness these tools to generate a brain-scale circuit model of the optomotor response, an orienting behavior evoked by visual motion. We show that such motion is processed by diverse neural response types distributed across multiple brain regions. To transform sensory input into action, these regions sequentially integrate eye- and direction-specific sensory streams, refine representations via interhemispheric inhibition, and demix locomotor instructions to independently drive turning and forward swimming. While experiments revealed many neural response types throughout the brain, modeling identified the dimensions of functional connectivity most critical for the behavior. We thus reveal how distributed neurons collaborate to generate behavior and illustrate a paradigm for distilling functional circuit models from whole-brain data. Copyright © 2016 Elsevier Inc. All rights reserved.

CMOS compatible IR sensors by cytochrome c protein

NASA Astrophysics Data System (ADS)

Liao, Chien-Jen; Su, Guo-Dung

2013-09-01

In recent years, due to the progression of the semiconductor industrial, the uncooled Infrared sensor - microbolometer has opened the opportunity for achieving low cost infrared imaging systems for both military and commercial applications. Therefore, various fabrication processes and different materials based microbolometer have been developed sequentially. The cytochrome c (protein) thin film has be reported high temperature coefficient of resistance (TCR), which is related to the performance of microbolometer directly. Hence the superior TCR value will increase the performance of microbolometer. In this paper, we introduced a novel fabrication process using aluminum which is compatible with the Taiwan Semiconductor Manufacture Company (TSMC) D35 2P4M process as the main structure material, which benefits the device to integrate with readout integrated circuit (ROIC).The aluminum split structure is suspended by sacrificial layer utilizing the standard photolithography technology and chemical etching. The height and thickness of the structure are already considered. Besides, cytochrome c solutions were ink-jetted onto the aluminum structure by using the inkjet printer, applying precise control of the Infrared absorbing layer. In measurement, incident Infrared radiation can be detected and later the heat can be transmitted to adjacent pads to readout the signal. This approach applies an inexpensive and simple fabrication process and makes the device suitable for integration. In addition, the performance can be further improved with low noise readout circuits.

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

PubMed

Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

2008-07-24

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.

A brief review of the clinical anatomy of the vestibular-ocular connections-how much do we know?

PubMed

Bronstein, A M; Patel, M; Arshad, Q

2015-02-01

The basic connectivity from the vestibular labyrinth to the eye muscles (vestibular ocular reflex, VOR) has been elucidated in the past decade, and we summarise this in graphic format. We also review the concept of 'velocity storage', a brainstem integrator that prolongs vestibular responses. Finally, we present new discoveries of how complex visual stimuli, such as binocular rivalry, influence VOR processing. In contrast to the basic brainstem circuits, cortical vestibular circuits are far from being understood, but parietal-vestibular nuclei projections are likely to be involved.

Progress in MMIC technology for satellite communications

NASA Technical Reports Server (NTRS)

Haugland, Edward J.; Leonard, Regis F.

1987-01-01

NASA's Lewis Research Center is actively involved in the development of monolithic microwave and millimeter-wave integrated circuits (MMICs). The approach of the program is to support basic research under grant or in-house, while MMIC development is done under contract, thereby facilitating the transfer of technology to users. Preliminary thrusts of the program have been the extension of technology to higher frequencies (60 GHz), degrees of complexity, and performance (power, efficiency, noise figure) by utilizing novel circuit designs, processes, and materials. A review of the progress made so far is presented.