Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Ohnishi, Takayuki; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi; Bai, Shufeng; Wang, Jen-Shiang; Howell, Rafael; Chen, George; Li, Jiangwei; Tao, Jun; Wiley, Jim; Kurosawa, Terunobu; Saito, Yasuko; Takigawa, Tadahiro

2010-09-01

In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

NASA Astrophysics Data System (ADS)

Ozawa, Ken; Komizo, Tooru; Ohnuma, Hidetoshi

2002-07-01

An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a single-trench type with undercut for ArF exposure, with programmed phase defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM193 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topographies of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors, are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated bump defect identified by the alt-PSM of a single-trench type with undercut for ArF exposure are 300 nm in bottom dimension and 74 degrees in height (phase) for the real shape, where the depth of wet-etching is 100 nm and the CD error limit is +/- 5 percent.

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

NASA Astrophysics Data System (ADS)

Ozawa, Ken; Komizo, Tooru; Kikuchi, Koji; Ohnuma, Hidetoshi; Kawahira, Hiroichi

2002-07-01

An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a dual-trench type for KrF exposure, with programmed quartz defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM100 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topography of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated defect identified by the alt-PSM of a single-trench type for ArF exposure are 240 nm in bottom diameter and 50 degrees in height (phase) for the cylindrical shape and 240 nm in bottom diameter and 90 degrees in height (phase) for the rotating trapezoidal shape, where the CD error limit is +/- 5%.

How much is enough? An analysis of CD measurement amount for mask characterization

NASA Astrophysics Data System (ADS)

Ullrich, Albrecht; Richter, Jan

2009-10-01

The demands on CD (critical dimension) metrology amount in terms of both reproducibility and measurement uncertainty steadily increase from node to node. Different mask characterization requirements have to be addressed like very small features, unevenly distributed features, contacts, semi-dense structures to name only a few. Usually this enhanced need is met by an increasing number of CD measurements, where the new CD requirements are added to the well established CD characterization recipe. This leads straight forwardly to prolonged cycle times and highly complex evaluation routines. At the same time mask processes are continuously improved to become more stable. The enhanced stability offers potential to actually reduce the number of measurements. Thus, in this work we will start to address the fundamental question of how many CD measurements are needed for mask characterization for a given confidence level. We used analysis of variances (ANOVA) to distinguish various contributors like mask making process, measurement tool stability and measurement methodology. These contributions have been investigated for classical photomask CD specifications e.g. mean to target, CD uniformity, target offset tolerance and x-y bias. We found depending on specification that the importance of the contributors interchanges. Interestingly, not only short and long-term metrology contributions are dominant. Also the number of measurements and their spatial distribution on the mask layout (sampling methodology) can be the most important part of the variance. The knowledge of contributions can be used to optimize the sampling plan. As a major finding, we conclude that there is potential to reduce a significant amount of measurements without loosing confidence at all. Here, full sampling in x and y as well as full sampling for different features can be shortened substantially almost up to 50%.

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

Data integration from pathology slides for quantitative imaging of multiple cell types within the tumor immune cell infiltrate.

PubMed

Ma, Zhaoxuan; Shiao, Stephen L; Yoshida, Emi J; Swartwood, Steven; Huang, Fangjin; Doche, Michael E; Chung, Alice P; Knudsen, Beatrice S; Gertych, Arkadiusz

2017-09-18

Immune cell infiltrates (ICI) of tumors are scored by pathologists around tumor glands. To obtain a better understanding of the immune infiltrate, individual immune cell types, their activation states and location relative to tumor cells need to be determined. This process requires precise identification of the tumor area and enumeration of immune cell subtypes separately in the stroma and inside tumor nests. Such measurements can be accomplished by a multiplex format using immunohistochemistry (IHC). We developed a pipeline that combines immunohistochemistry (IHC) and digital image analysis. One slide was stained with pan-cytokeratin and CD45 and the other slide with CD8, CD4 and CD68. The tumor mask generated through pan-cytokeratin staining was transferred from one slide to the other using affine image co-registration. Bland-Altman plots and Pearson correlation were used to investigate differences between densities and counts of immune cell underneath the transferred versus manually annotated tumor masks. One-way ANOVA was used to compare the mask transfer error for tissues with solid and glandular tumor architecture. The overlap between manual and transferred tumor masks ranged from 20%-90% across all cases. The error of transferring the mask was 2- to 4-fold greater in tumor regions with glandular compared to solid growth pattern (p < 10 -6 ). Analyzing data from a single slide, the Pearson correlation coefficients of cell type densities outside and inside tumor regions were highest for CD4 + T-cells (r = 0.8), CD8 + T-cells (r = 0.68) or CD68+ macrophages (r = 0.79). The correlation coefficient for CD45+ T- and B-cells was only 0.45. The transfer of the mask generated an error in the measurement of intra- and extra- tumoral CD68+, CD8+ or CD4+ counts (p < 10 -10 ). In summary, we developed a general method to integrate data from IHC stained slides into a single dataset. Because of the transfer error between slides, we recommend applying the antibody for demarcation of the tumor on the same slide as the ICI antibodies.

Effects of hard mask etch on final topography of advanced phase shift masks

NASA Astrophysics Data System (ADS)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

NASA Astrophysics Data System (ADS)

Lee, Sung-Woo; Leunissen, Leonardus H. A.; Van de Kerkhove, Jeroen; Philipsen, Vicky; Jonckheere, Rik; Lee, Suk-Joo; Woo, Sang-Gyun; Cho, Han-Ku; Moon, Joo-Tae

2006-06-01

The specification of the mask mean-to-target (MTT) and uniformity is related to functions as: mask error enhancement factor, dose sensitivity and critical dimension (CD) tolerances. The mask MTT shows a trade-off relationship with the uniformity. Simulations for the mask MTT and uniformity (M-U) are performed for LOGIC devices of 45 and 37 nm nodes according to mask type, illumination condition and illuminator polarization state. CD tolerances and after develop inspection (ADI) target CD's in the simulation are taken from the 2004 ITRS roadmap. The simulation results allow for much smaller tolerances in the uniformity and larger offsets in the MTT than the values as given in the ITRS table. Using the parameters in the ITRS table, the mask uniformity contributes to nearly 95% of total CDU budget for the 45 nm node, and is even larger than the CDU specification of the ITRS for the 37 nm node. We also compared the simulation requirements with the current mask making capabilities. The current mask manufacturing status of the mask uniformity is barely acceptable for the 45 nm node, but requires process improvements towards future nodes. In particular, for the 37 nm node, polarized illumination is necessary to meet the ITRS requirements. The current mask linearity deviates for pitches smaller than 300 nm, which is not acceptable even for the 45 nm node. More efforts on the proximity correction method are required to improve the linearity behavior.

Compensation of flare-induced CD changes EUVL

DOEpatents

Bjorkholm, John E [Pleasanton, CA; Stearns, Daniel G [Los Altos, CA; Gullikson, Eric M [Oakland, CA; Tichenor, Daniel A [Castro Valley, CA; Hector, Scott D [Oakland, CA

2004-11-09

A method for compensating for flare-induced critical dimensions (CD) changes in photolithography. Changes in the flare level results in undesirable CD changes. The method when used in extreme ultraviolet (EUV) lithography essentially eliminates the unwanted CD changes. The method is based on the recognition that the intrinsic level of flare for an EUV camera (the flare level for an isolated sub-resolution opaque dot in a bright field mask) is essentially constant over the image field. The method involves calculating the flare and its variation over the area of a patterned mask that will be imaged and then using mask biasing to largely eliminate the CD variations that the flare and its variations would otherwise cause. This method would be difficult to apply to optical or DUV lithography since the intrinsic flare for those lithographies is not constant over the image field.

CD control with defect inspection: you can teach an old dog a new trick

NASA Astrophysics Data System (ADS)

Utzny, Clemens; Ullrich, Albrecht; Heumann, Jan; Mohn, Elias; Meusemann, Stefan; Seltmann, Rolf

2012-11-01

Achieving the required critical dimensions (CD) with the best possible uniformity (CDU) on photo-masks has always played a pivotal role in enabling chip technology. Current control strategies are based on scanning electron microscopy (SEM) based measurements implying a sparse spatial resolution on the order of ~ 10-2 m to 10-1 m. A higher spatial resolution could be reached with an adequate measurement sampling, however the increase in the number of measurements makes this approach in the context of a productive environment unfeasible. With the advent of more powerful defect inspection tools a significantly higher spatial resolution of 10-4 m can be achieved by measuring also CD during the regular defect inspection. This method is not limited to the measurement of specific measurement features thus paving the way to a CD assessment of all electrically relevant mask patterns. Enabling such a CD measurement gives way to new realms of CD control. Deterministic short range CD effects which were previously interpreted as noise can be resolved and addressed by CD compensation methods. This in can lead to substantial improvements of the CD uniformity. Thus the defect inspection mediated CD control closes a substantial gap in the mask manufacturing process by allowing the control of short range CD effects which were up till now beyond the reach of regular CD SEM based control strategies. This increase in spatial resolution also counters the decrease in measurement precision due to the usage of an optical system. In this paper we present detailed results on a) the CD data generated during the inspection process, b) the analytical tools needed for relating this data to CD SEM measurement and c) how the CD inspection process enables new dimension of CD compensation within the mask manufacturing process. We find that the inspection based CD measurement generates typically around 500000 measurements with a homogeneous covering of the active mask area. In comparing the CD inspection results with CD SEM measurement on a single measurement point base we find that optical limitations of the inspection tool play a substantial role within the photon based inspection process. Once these shift are characterized and removed a correlation coefficient of 0.9 between these two CD measurement techniques is found. This finding agrees well with a signature based matching approach. Based on these findings we set up a dedicated pooling algorithm which performs on outlier removal for all CD inspections together with a data clustering according to feature specific tool induced shifts. This way tool induced shift effects can be removed and CD signature computation is enabled. A statistical model of the CD signatures which relates the mask design parameters on the relevant length scales to CD effects thus enabling the computation CD compensation maps. The compensation maps address the CD effects on various distinct length scales and we show that long and short range contributions to the CD variation are decreased. We find that the CD uniformity is improved by 25% using this novel CD compensation strategy.

Scanner qualification with IntenCD based reticle error correction

NASA Astrophysics Data System (ADS)

Elblinger, Yair; Finders, Jo; Demarteau, Marcel; Wismans, Onno; Minnaert Janssen, Ingrid; Duray, Frank; Ben Yishai, Michael; Mangan, Shmoolik; Cohen, Yaron; Parizat, Ziv; Attal, Shay; Polonsky, Netanel; Englard, Ilan

2010-03-01

Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the cycle time for pre and post production-start activities. If done effectively, the matrices of base line performance established during the SAT are used as a reference for scanner performance and fleet matching monitoring and maintenance in the fab environment. Key elements which can influence the cycle time of the SAT, FAT and maintenance cycles are the imaging, process and mask characterizations involved with those cycles. Discrete mask measurement techniques are currently in use to create across-mask CDU maps. By subtracting these maps from their final wafer measurement CDU map counterparts, it is possible to assess the real scanner induced printed errors within certain limitations. The current discrete measurement methods are time consuming and some techniques also overlook mask based effects other than line width variations, such as transmission and phase variations, all of which influence the final printed CD variability. Applied Materials Aera2TM mask inspection tool with IntenCDTM technology can scan the mask at high speed, offer full mask coverage and accurate assessment of all masks induced source of errors simultaneously, making it beneficial for scanner qualifications and performance monitoring. In this paper we report on a study that was done to improve a scanner introduction and qualification process using the IntenCD application to map the mask induced CD non uniformity. We will present the results of six scanners in production and discuss the benefits of the new method.

Investigation of phase distribution using Phame® in-die phase measurements

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Perlitz, Sascha

2009-03-01

As lithography mask processes move toward 45nm and 32nm node, mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. Driven by this fact the requirements for metrology tools increase as well. Efforts in metrology have been focused on accurately measuring CD linearity and uniformity across the mask, and accurately measuring phase variation on Alternating/Attenuated PSM and transmission for Attenuated PSM. CD control on photo masks is usually done through the following processes: exposure dose/focus change, resist develop and dry etch. The key requirement is to maintain correct CD linearity and uniformity across the mask. For PSM specifically, the effect of CD uniformity for both Alternating PSM and Attenuated PSM and etch depth for Alternating PSM becomes also important. So far phase measurement has been limited to either measuring large-feature phase using interferometer-based metrology tools or measuring etch depth using AFM and converting etch depth into phase under the assumption that trench profile and optical properties of the layers remain constant. However recent investigations show that the trench profile and optical property of layers impact the phase. This effect is getting larger for smaller CD's. The currently used phase measurement methods run into limitations because they are not able to capture 3D mask effects, diffraction limitations or polarization effects. The new phase metrology system - Phame(R) developed by Carl Zeiss SMS overcomes those limitations and enables laterally resolved phase measurement in any kind of production feature on the mask. The resolution of the system goes down to 120nm half pitch at mask level. We will report on tool performance data with respect to static and dynamic phase repeatability focusing on Alternating PSM. Furthermore the phase metrology system was used to investigate mask process signatures on Alternating PSM in order to further improve the overall PSM process performance. Especially global loading effects caused by the pattern density and micro loading effects caused by the feature size itself have been evaluated using the capability of measuring phase in the small production features. The results of this study will be reported in this paper.

Scatterometry measurement of nested lines, dual space, and rectangular contact CD on phase-shift masks

NASA Astrophysics Data System (ADS)

Lee, Kyung M.; Yedur, Sanjay; Henrichs, Sven; Tavassoli, Malahat; Baik, Kiho

2007-03-01

Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on a application of Scatterometry based metrology for evaluation of binary photomask lithography. Measurements were made on mask level with ODP scatterometer then on wafer with CD-SEM. 4 to 1 scaling from mask to wafer means 60nm line on wafer translates to 240nm on mask, easily measurable on ODP. Calculation of scatterometer profile information was performed by a in-situ library-based analysis (5sec/site). We characterized the CD uniformity, linearity, and metal film thickness uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. ODP-SEM correlation results for variable pitch shows that careful examination of scatterometer profile results in order to obtain better correlation to CD SEM, since both tools react differently to the target profile variation. ODP results show that global CD distribution is clearly measurable with less outliers compared to CD SEM data. This is thought to be due to 'averaging' effect of scatterometer. The data show that Scatterometry provides a nondestructive and faster mean of characterizing lithography stepper performanceprofiles. APSM 1st level (before Cr removal) 'dual-space' CDs and EPSM rectangular contacts were also measured with and results demonstrates that Scatterometer is capable of measuring these targets with reasonable correlation to SEM.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Integration of mask and silicon metrology in DFM

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

2009-03-01

We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based on the profiling method of the field proven CD metrology algorithm. The detected edges are then converted to GDSII format, which is a standard format for a design data, and utilized for various DFM systems such as simulation. Namely, by integrating pattern shapes of mask and silicon formed during a manufacturing process into GDSII format, it makes it possible to bridge highly accurate pattern profile information over to the design field of various EDA systems. These are fully integrated into design data and automated. Bi-directional cross probing between mask data and process control data is allowed by linking them. This method is a solution for total optimization that covers Design, MDP, mask production and silicon device producing. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

How to obtain accurate resist simulations in very low-k1 era?

NASA Astrophysics Data System (ADS)

Chiou, Tsann-Bim; Park, Chan-Ha; Choi, Jae-Seung; Min, Young-Hong; Hansen, Steve; Tseng, Shih-En; Chen, Alek C.; Yim, Donggyu

2006-03-01

A procedure for calibrating a resist model iteratively adjusts appropriate parameters until the simulations of the model match the experimental data. The tunable parameters may include the shape of the illuminator, the geometry and transmittance/phase of the mask, light source and scanner-related parameters that affect imaging quality, resist process control and most importantly the physical/chemical factors in the resist model. The resist model can be accurately calibrated by measuring critical dimensions (CD) of a focus-exposure matrix (FEM) and the technique has been demonstrated to be very successful in predicting lithographic performance. However, resist model calibration is more challenging in the low k1 (<0.3) regime because numerous uncertainties, such as mask and resist CD metrology errors, are becoming too large to be ignored. This study demonstrates a resist model calibration procedure for a 0.29 k1 process using a 6% halftone mask containing 2D brickwall patterns. The influence of different scanning electron microscopes (SEM) and their wafer metrology signal analysis algorithms on the accuracy of the resist model is evaluated. As an example of the metrology issue of the resist pattern, the treatment of a sidewall angle is demonstrated for the resist line ends where the contrast is relatively low. Additionally, the mask optical proximity correction (OPC) and corner rounding are considered in the calibration procedure that is based on captured SEM images. Accordingly, the average root-mean-square (RMS) error, which is the difference between simulated and experimental CDs, can be improved by considering the metrological issues. Moreover, a weighting method and a measured CD tolerance are proposed to handle the different CD variations of the various edge points of the wafer resist pattern. After the weighting method is implemented and the CD selection criteria applied, the RMS error can be further suppressed. Therefore, the resist CD and process window can be confidently evaluated using the accurately calibrated resist model. One of the examples simulates the sensitivity of the mask pattern error, which is helpful to specify the mask CD control.

In-die mask registration measurement on 28nm-node and beyond

NASA Astrophysics Data System (ADS)

Chen, Shen Hung; Cheng, Yung Feng; Chen, Ming Jui

2013-09-01

As semiconductor go to smaller node, the critical dimension (CD) of process become more and more small. For lithography, RET (Resolution Enhancement Technology) applications can be used for wafer printing of smaller CD/pitch on 28nm node and beyond. SMO (Source Mask Optimization), DPT (Double Patterning Technology) and SADP (Self-Align Double Patterning) can provide lower k1 value for lithography. In another way, image placement error and overlay control also become more and more important for smaller chip size (advanced node). Mask registration (image placement error) and mask overlay are important factors to affect wafer overlay control/performance especially for DPT or SADP. In traditional method, the designed registration marks (cross type, square type) with larger CD were put into scribe-line of mask frame for registration and overlay measurement. However, these patterns are far way from real patterns. It does not show the registration of real pattern directly and is not a convincing method. In this study, the in-die (in-chip) registration measurement is introduced. We extract the dummy patterns that are close to main pattern from post-OPC (Optical Proximity Correction) gds by our desired rule and choose the patterns that distribute over whole mask uniformly. The convergence test shows 100 points measurement has a reliable result.

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

NASA Astrophysics Data System (ADS)

Ito, Shin; Kodera, Yutaka; Fukugami, Norihito; Komizo, Toru; Maruyama, Shingo; Watanabe, Genta; Yoshida, Itaru; Kotani, Jun; Konishi, Toshio; Haraguchi, Takashi

2016-05-01

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called `Hybrid Black Border' (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Resist heating effect on e-beam mask writing at 75 kV and 60 A/cm2

NASA Astrophysics Data System (ADS)

Benes, Zdenek; Deverich, Christina; Huang, Chester; Lawliss, Mark

2003-12-01

Resist heating has been known to be one of the main contributors to local CD variation in mask patterning using variable shape e-beam tools. Increasingly complex mask patterns require increased number of shapes which drives the need for higher electron beam current densities to maintain reasonable write times. As beam current density is increased, CD error resulting from resist heating may become a dominating contributor to local CD variations. In this experimental study, the IBM EL4+ mask writer with high voltage and high current density has been used to quantitatively investigate the effect of resist heating on the local CD uniformity. ZEP 7000 and several chemically amplified resists have been evaluated under various exposure conditions (single-pass, multi-pass, variable spot size) and pattern densities. Patterns were designed specifically to allow easy measurement of local CD variations with write strategies designed to maximize the effect of resist heating. Local CD variations as high as 15 nm in 18.75 × 18.75 μm sub-field size have been observed for ZEP 7000 in a single-pass writing with full 1000 nm spots at 50% pattern density. This number can be reduced by increasing the number of passes or by decreasing the maximum spot size. The local CD variation has been reduced to as low as 2 nm for ZEP 7000 for the same pattern under modified exposure conditions. The effectiveness of various writing strategies is discussed as well as their possible deficiencies. Minimal or no resist heating effects have been observed for the chemically amplified resists studied. The results suggest that the resist heating effect can be well controlled by careful selection of the resist/process system and/or writing strategy and that resist heating does not have to pose a problem for high throughput e-beam mask making that requires high voltage and high current densities.

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Extraction and utilization of the repeating patterns for CP writing in mask making

NASA Astrophysics Data System (ADS)

Shoji, Masahiro; Inoue, Tadao; Yamabe, Masaki

2010-05-01

In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the Association of Super-Advanced Electronics Technologies (ASET) launched a 4-year program for reducing mask manufacturing cost and TAT by concurrent optimization of Mask Data Preparation (MDP), mask writing, and mask inspection [1]. Figure 1 shows an outline of the project at Mask D2I at ASET. As one of the tasks being pursued at the Mask Design Data Technology Research Laboratory we have evaluated the effect of reducing the writing shot counts by utilizing the repeating patterns, and that showed positive impact on mask making by using CP writing. During the past four years, we have developed a software to extract repeating patterns from fractured OPCed mask data and have evaluated the efficiency of reducing the writing shot counts using the repeating patterns with this software. In this evaluation, we have used many actual device production data obtained from the member companies of Mask D2I. To the extraction software, we added new functions for extracting common repeating patterns from a set of multiple masks, and studied how this step affects the ratio of reducing the shot counts in comparison to the case of utilization of the repeating patterns for single mask. We have also developed a software that uses the result of extracting repeating patterns and prepares writing-data for the MCC/CP writing system which has been developed at the Mask Writing Equipment Technology Research Laboratory. With this software, we have examined how EB proximity effect on CP writing affects in reducing the shot count where CP shots with large CD errors have to be divided into VSB shots. In this paper we will report on making common CP mask from a set of multiple actual device data by using these software, and will also report on the results of CP writing and calculation of writing-TAT by MCC/CP writing system.

Mask CD relationship to temperature at the time backscatter is received

NASA Astrophysics Data System (ADS)

Zable, Harold; Kronmiller, Tom; Pearman, Ryan; Guthrie, Bill; Shirali, Nagesh; Masuda, Yukihiro; Kamikubo, Takashi; Nakayamada, Noriaki; Fujimura, Aki

2017-07-01

Mask writers need to be able to write sub-50nm features accurately. Nano-imprint lithography (NIL) masters need to create sub-20nm line and space (L:S) patterns reliably. Increasingly slower resists are deployed, but mask write times need to remain reasonable. The leading edge EBM-9500 offers 1200A/cm2 current density to shoot variable shaped beam (VSB) to write the masks. Last year, thermal effect correction (TEC) was introduced by NuFlare in the EBM-95001. It is a GPU-accelerated inline correction for the effect that the temperature of the resist has on CD. For example, a 100nm CD may print at 102nm where that area was at a comparably high temperature at the time of the shot. Since thermal effect is a temporal effect, the simulated temperature of the surface of the mask is dynamically updated for the effect of each shot in order to accurately predict the cumulative effect that is the temperature at the location of the shot at the time of the shot and therefore its impact on CD. The shot dose is changed to reverse the effects of the temperature change. This paper for the first time reveals an enhancement to this thermal model and a simulator for it. It turns out that the temperature at the time each location receives backscatter from other shots also make a difference to the CD. The effect is secondary, but still measurable for some resists and substrates. Results of a test-chip study will be presented. The computation required for the backscatter effect is substantial. It has been demonstrated that this calculation can be performed fast enough to be inline with the EBM-9500 with a reasonable-sized computing platform. Run-time results and the computing architecture will be presented.

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

NASA Astrophysics Data System (ADS)

Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

2015-03-01

Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

Utilization of optical emission endpoint in photomask dry etch processing

NASA Astrophysics Data System (ADS)

Faure, Thomas B.; Huynh, Cuc; Lercel, Michael J.; Smith, Adam; Wagner, Thomas

2002-03-01

Use of accurate and repeatable endpoint detection during dry etch processing of photomask is very important for obtaining good mask mean-to-target and CD uniformity performance. It was found that the typical laser reflectivity endpoint detecting system used on photomask dry etch systems had several key limitations that caused unnecessary scrap and non-optimum image size performance. Consequently, work to develop and implement use of a more robust optical emission endpoint detection system for chrome dry etch processing of photomask was performed. Initial feasibility studies showed that the emission technique was sensitive enough to monitor pattern loadings on contact and via level masks down to 3 percent pattern coverage. Additional work was performed to further improve this to 1 percent pattern coverage by optimizing the endpoint detection parameters. Comparison studies of mask mean-to-target performance and CD uniformity were performed with the use of optical emission endpoint versus laser endpoint for masks built using TOK IP3600 and ZEP 7000 resist systems. It was found that an improvement in mean-to-target performance and CD uniformity was realized on several types of production masks. In addition, part-to-part endpoint time repeatability was found to be significantly improved with the use of optical emission endpoint.

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Jeong, Goomin; Seo, Kangjun; Kim, Sangchul; kim, changreol

2008-05-01

Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

NASA Astrophysics Data System (ADS)

Sturtevant, John; Tejnil, Edita; Buck, Peter D.; Schulze, Steffen; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-09-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. Many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine via simulation, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and communication between mask and OPC model experts. The simulations are done by ignoring the wafer photoresist model, and show the sensitivity of predictions to various model inputs associated with the mask. It is shown that the wafer simulations are very dependent upon the 1D/2D representation of the mask and for 3D, that the mask sidewall angle is a very sensitive factor influencing simulated wafer CD results.

Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

NASA Astrophysics Data System (ADS)

Irmscher, Mathias; Beyer, Dirk; Butschke, Joerg; Constantine, Chris; Hoffmann, Thomas; Koepernik, Corinna; Krauss, Christian; Leibold, Bernd; Letzkus, Florian; Mueller, Dietmar; Springer, Reinhard; Voehringer, Peter

2002-07-01

Positive tone chemically amplified resists CAP209, EP012M (TOK), KRS-XE (JSR) and FEP171 (Fuji) were evaluated for mask making. The investigations were performed on an advanced tool set comprising of a Steag coater ASR5000, Steag developer ASP5000, 50kV e-beam writer Leica SB350, UNAXIS MASK ETCHER III , STS ICP silicon etcher and a CD-SEM KLA8100. We investigated and compared resolution, sensitivity, resist slope, dark field loss, CD-uniformity, line edge roughness, and etch resistance of the evaluated resists. Furthermore, the influence of post coating delay, post exposure delay and other process parameters on the resist performance was determined.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Optimization of plasma etching of SiO2 as hard mask for HgCdTe dry etching

NASA Astrophysics Data System (ADS)

Chen, Yiyu; Ye, Zhenhua; Sun, Changhong; Zhang, Shan; Xin, Wen; Hu, Xiaoning; Ding, Ruijun; He, Li

2016-10-01

HgCdTe is one of the dominating materials for infrared detection. To pattern this material, our group has proven the feasibility of SiO2 as a hard mask in dry etching process. In recent years, the SiO2 mask patterned by plasma with an auto-stopping layer of ZnS sandwiched between HgCdTe and SiO2 has been developed by our group. In this article, we will report the optimization of SiO2 etching on HgCdTe. The etching of SiO2 is very mature nowadays. Multiple etching recipes with deferent gas mixtures can be used. We utilized a recipe containing Ar and CHF3. With strictly controlled photolithography, the high aspect-ratio profile of SiO2 was firstly achieved on GaAs substrate. However, the same recipe could not work well on MCT because of the low thermal conductivity of HgCdTe and CdTe, resulting in overheated and deteriorated photoresist. By decreasing the temperature, the photoresist maintained its good profile. A starting table temperature around -5°C worked well enough. And a steep profile was achieved as checked by the SEM. Further decreasing of temperature introduced profile with beveled corner. The process window of the temperature is around 10°C. Reproducibility and uniformity were also confirmed for this recipe.

Splendidly blended: a machine learning set up for CDU control

NASA Astrophysics Data System (ADS)

Utzny, Clemens

2017-06-01

As the concepts of machine learning and artificial intelligence continue to grow in importance in the context of internet related applications it is still in its infancy when it comes to process control within the semiconductor industry. Especially the branch of mask manufacturing presents a challenge to the concepts of machine learning since the business process intrinsically induces pronounced product variability on the background of small plate numbers. In this paper we present the architectural set up of a machine learning algorithm which successfully deals with the demands and pitfalls of mask manufacturing. A detailed motivation of this basic set up followed by an analysis of its statistical properties is given. The machine learning set up for mask manufacturing involves two learning steps: an initial step which identifies and classifies the basic global CD patterns of a process. These results form the basis for the extraction of an optimized training set via balanced sampling. A second learning step uses this training set to obtain the local as well as global CD relationships induced by the manufacturing process. Using two production motivated examples we show how this approach is flexible and powerful enough to deal with the exacting demands of mask manufacturing. In one example we show how dedicated covariates can be used in conjunction with increased spatial resolution of the CD map model in order to deal with pathological CD effects at the mask boundary. The other example shows how the model set up enables strategies for dealing tool specific CD signature differences. In this case the balanced sampling enables a process control scheme which allows usage of the full tool park within the specified tight tolerance budget. Overall, this paper shows that the current rapid developments off the machine learning algorithms can be successfully used within the context of semiconductor manufacturing.

Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations

NASA Astrophysics Data System (ADS)

Badger, Karen D.; Rankin, Jed; Turley, Christina; Seki, Kazunori; Dechene, Dan J.; Abdelghany, Hesham

2016-09-01

MEEF, or Mask Error Enhancement Factor, is simply defined as the ratio of the change in printed wafer feature width to the change in mask feature width scaled to wafer level. It is important in chip manufacturing that leads to the amplification of mask errors, creating challenges with both achieving dimensional control tolerances and ensuring defect free masks, as measured by on-wafer image quality. As lithographic imaging continues to be stressed, using lower and lower k1 factor resolution enhancement techniques, the high MEEF areas present on advanced optical masks creates an environment where the need for increased mask defect sensitivity in high-MEEF areas becomes more and more critical. There are multiple approaches to mask inspection that may or may not provide enough sensitivity to detect all wafer-printable defects; the challenge in the application of these techniques is simultaneously maintaining an acceptable level of mask inspectability. The higher the MEEF, the harder the challenge will be to achieve and appropriate level of sensitivity while maintaining inspectability…and to do so on the geometries that matter. The predominant photomask fabrication inspection approach in use today compares the features on the reticle directly with the design database using high-NA optics. This approach has the ability to detect small defects, however, when inspecting aggressive OPC, it can lead to the over-detection of inconsequential, or nuisance defects. To minimize these nuisance detections, changing the sensitivity of the inspection can improve the inspectability of a mask inspected in high-NA mode, however, it leads to the inability to detect subtle, yet wafer-printable defects in High-MEEF geometry, due to the fact that this `desense' must be applied globally. There are also `lithography-emulating' approaches to inspection that use various means to provide high defect sensitivity and the ability to tolerate inconsequential, non-printing defects by using scanner-like conditions to determine which defects are wafer printable. This inspection technique is commonly referred to as being `lithography plane' or `litho plane,' since it's assessing the mask quality based on how the mask appears to the imaging optics during use, as proposed to traditional `reticle plane' inspection which is comparing the mask only with its target design. Regardless of how the defects are detected, the real question is when should they be detected? For larger technology nodes, defects are considered `statistical risks'…i.e., first they have to occur, and then they have to fall in high-MEEF areas in order to be of concern, and be below the detection limits of traditional reticle-plane inspection. In short, the `perfect storm' has to happen in order to miss printable defects using well-optimized traditional inspection approaches. The introduction of lithographic inspection techniques has revealed this statistical game is a much higher risk than originally estimated, in that very subtle waferprintable CD errors typically fall into the desense band for traditional reticle plane inspection. Because printability is largely influenced by MEEF, designs with high-MEEF values are at greater risk of traditional inspection missing printable CD errors. The question is… how high is high… and at what MEEF is optical inspection at the reticle plane sufficient? This paper will provide evaluation results for both reticle-plane and litho-plane inspections as they pertain to varying degrees of MEEF. A newly designed high-MEEF programmed defect test mask, named VAMPIRE, will be introduced. This test mask is based on 7 nm node technology and contains intentionally varying degrees of MEEF as well as a variety of programmed defects in high-MEEF environments…all of which have been verified for defect lithographic significance on a Zeiss AIMS system.

Automated hotspot analysis with aerial image CD metrology for advanced logic devices

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Trautzsch, Thomas; Kim, Min-ho; Seo, Jung-Uk; Yoon, Young-Keun; Han, Hak-Seung; Chung, Dong Hoon; Jeon, Chan-Uk; Meyers, Gary

2014-09-01

Continuously shrinking designs by further extension of 193nm technology lead to a much higher probability of hotspots especially for the manufacturing of advanced logic devices. The CD of these potential hotspots needs to be precisely controlled and measured on the mask. On top of that, the feature complexity increases due to high OPC load in the logic mask design which is an additional challenge for CD metrology. Therefore the hotspot measurements have been performed on WLCD from ZEISS, which provides the benefit of reduced complexity by measuring the CD in the aerial image and qualifying the printing relevant CD. This is especially of advantage for complex 2D feature measurements. Additionally, the data preparation for CD measurement becomes more critical due to the larger amount of CD measurements and the increasing feature diversity. For the data preparation this means to identify these hotspots and mark them automatically with the correct marker required to make the feature specific CD measurement successful. Currently available methods can address generic pattern but cannot deal with the pattern diversity of the hotspots. The paper will explore a method how to overcome those limitations and to enhance the time-to-result in the marking process dramatically. For the marking process the Synopsys WLCD Output Module was utilized, which is an interface between the CATS mask data prep software and the WLCD metrology tool. It translates the CATS marking directly into an executable WLCD measurement job including CD analysis. The paper will describe the utilized method and flow for the hotspot measurement. Additionally, the achieved results on hotspot measurements utilizing this method will be presented.

Novel EUV mask black border and its impact on wafer imaging

NASA Astrophysics Data System (ADS)

Kodera, Yutaka; Fukugami, Norihito; Komizo, Toru; Watanabe, Genta; Ito, Shin; Yoshida, Itaru; Maruyama, Shingo; Kotani, Jun; Konishi, Toshio; Haraguchi, Takashi

2016-03-01

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the EUV light reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. To reduce this effect an etched multilayer type black border was developed, and it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light which is emitted from EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel black border called Hybrid Black Border has been developed which allows to eliminate EUV and DUV OOB light reflection. Direct measurements of OOB light from HBB and Normal BB are performed on NXE:3300B ASML EUV scanner; it is shown that HBB OOB reflection is 3x lower than that of Normal BB. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper

NASA Astrophysics Data System (ADS)

Hyun, Yoon-Suk; Kim, Dong-Joo; Koh, Cha-Won; Park, Sung-Nam; Kwon, Won-Taik

2003-06-01

xAs the design rule of semiconductor device shrinks, the field CD uniformity gets more important. For mass production of 0.15 μm technology device using KrF stepper having 0.63NA, the improvement of field CD uniformity was one of key issues because field CD uniformity is directly related to device characteristics in some layers. We have experienced steppers that show poor illumination uniformity. With those steppers there was large CD difference of about 10nm between field center and field edges as shown in Figure 1. Although we were using verified reticles, we could not get an acceptable CD uniformity in a field with those steppers. The Field CD uniformity is dominantly dependent of the illumination uniformity of stepper and mask quality. With these optimization, we could control DICD difference between field center and edge to be less than 5nm. In this paper, we characterized the dependency of field CD uniformity according to illumination systems with stepper and scanner, annular illumination uniformity at various stigma, mask CD uniformity and the several types of novel gray filter specifically developed.

Influence of the baking process for chemically amplified resist on CD performance

NASA Astrophysics Data System (ADS)

Sasaki, Shiho; Ohfuji, Takeshi; Kurihara, Masa-aki; Inomata, Hiroyuki; Jackson, Curt A.; Murata, Yoshio; Totsukawa, Daisuke; Tsugama, Naoko; Kitano, Naoki; Hayashi, Naoya; Hwang, David H.

2002-12-01

CD uniformity and MTT (Mean to Target) control are very important in mask production for the 90nm node and beyond. Although it is well known that baking temperatures influence CD control in the CAR (chemically amplified resist) process for mask patterning, we found that 2 other process factors, which are related to acid diffusion and CA- reaction, greatly affect CD performance. We used a commercially available, negative CAR material and a 50kV exposure tool. We focused on the baking process for both PB (Pre Baking) and PEB (Post Exposure Bake). Film densification strength was evaluated from film thickness loss during PB. Plate temperature distribution was monitored with a thermocouple plate and IR camera. CA-reactions were also monitored with in-situ FTIR during PEB. CD uniformity was used to define the process influence. In conclusion, we found that airflow control and ramping temperature control in the baking process are very important factors to control CD in addition to conventional temperature control. These improvements contributed to a 30 % of reduction in CD variation.

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer holds true. There is a need to be flexible enough on unrepairable defect at early stage but also a need for efficient risk management system on mask defect waivers. Mask defects are often waived in low design criticality area in favor of scrapping the mask and delaying the mask and wafer schedule. Xilinx's involvement in mask manufacturing has contributed significantly to our success in past many nodes and will continue.

Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

NASA Astrophysics Data System (ADS)

Irmscher, Mathias; Berger, Lothar; Beyer, Dirk; Butschke, Joerg; Dress, Peter; Hoffmann, Thomas; Hudek, Peter; Koepernik, Corinna; Tschinkl, Martin; Voehringer, Peter

2003-08-01

Negative-tone chemically amplified resists MES-EN1G (JSR), FEN-270 (Fujifilm ARCH), EN-024M (TOK) and NEB-22 (Sumitomo) were evaluated for binary mask making. The investigations were performed on an advanced tool set comprising a 50kV e-beam writer Leica SB350, a Steag Hamatech hot/cool plate module APB5000, a Steag Hamatech developer ASP5000, an UNAXIS MASK ETCHER III and a SEM LEO1560 with integrated CD measurement option. We investigated and compared the evaluated resists in terms of resolution, e-beam sensitivity, resist profile, post exposure bake sensitivity, CD-uniformity, line edge roughness, pattern fidelity and etch resistance. Furthermore, the influence of post coating delay and post exposure delay in vacuum and air was determined.

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

Photomask applications of traceable atomic force microscope dimensional metrology at NIST

NASA Astrophysics Data System (ADS)

Dixson, Ronald; Orji, Ndubuisi G.; Potzick, James; Fu, Joseph; Allen, Richard A.; Cresswell, Michael; Smith, Stewart; Walton, Anthony J.; Tsiamis, Andreas

2007-10-01

The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. Three major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C-AFM), the second is the first generation of commercially available critical dimension AFM (CD-AFM), and the third is a current generation CD-AFM at SEMATECH - for which NIST has established the calibration and uncertainties. All of these instruments have useful applications in photomask metrology. Linewidth reference metrology is an important application of CD-AFM. We have performed a preliminary comparison of linewidths measured by CD-AFM and by electrical resistance metrology on a binary mask. For the ten selected test structures with on-mask linewidths between 350 nm and 600 nm, most of the observed differences were less than 5 nm, and all of them were less than 10 nm. The offsets were often within the estimated uncertainties of the AFM measurements, without accounting for the effect of linewidth roughness or the uncertainties of electrical measurements. The most recent release of the NIST photomask standard - which is Standard Reference Material (SRM) 2059 - was also supported by CD-AFM reference measurements. We review the recent advances in AFM linewidth metrology that will reduce the uncertainty of AFM measurements on this and future generations of the NIST photomask standard. The NIST C-AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the iodine-stabilized He-Ne laser. One of the important applications of the C-AFM is step height metrology, which has some relevance to phase shift calibration. In the current generation of the system, the approximate level of relative standard uncertainty for step height measurements at the 100 nm scale is 0.1 %. We discuss the monitor history of a 290 nm step height, originally measured on the C-AFM with a 1.9 nm (k = 2) expanded uncertainty, and describe advances that bring the step height uncertainty of recent measurements to an estimated 0.6 nm (k = 2). Based on this work, we expect to be able to reduce the topographic component of phase uncertainty in alternating aperture phase shift masks (AAPSM) by a factor of three compared to current calibrations based on earlier generation step height references.

DUV mask writer for BEOL 90-nm technology layers

NASA Astrophysics Data System (ADS)

Hong, Dongsung; Krishnan, Prakash; Coburn, Dianna; Jeewakhan, Nazneen; Xie, Shengqi; Broussard, Joshua; Ferguson, Bradley; Green, Kent G.; Buck, Peter; Jackson, Curt A.; Martinez, Larry

2003-12-01

Mask CD resolution and uniformity requirements for back end of line (BEOL) layers for the 90nm Technology Node push the capability of I-line mask writers; yet, do not require the capability offered by more expensive 50KeV ebeam mask writers. This suite of mask layers seems to be a perfect match for the capabilities of the DUV mask writing tools, which offer a lower cost option to the 50KeV platforms. This paper will evaluate both the mask and wafer results from all three platforms of mask writers (50KeV VSB,ETEC Alta 4300TM DUV laser and ETEC Alta 3500TM I-line laser) for a Cypress 90nm node Metal 1 layer, and demonstrate the benefits of the DUV platform with no change to OPC for this layer.

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

NASA Astrophysics Data System (ADS)

Phan, Khoi A.; Spence, Chris A.; Dakshina-Murthy, S.; Bala, Vidya; Williams, Alvina M.; Strener, Steve; Eandi, Richard D.; Li, Junling; Karklin, Linard

1999-12-01

As advanced process technologies in the wafer fabs push the patterning processes toward lower k1 factor for sub-wavelength resolution printing, reticles are required to use optical proximity correction (OPC) and phase-shifted mask (PSM) for resolution enhancement. For OPC/PSM mask technology, defect printability is one of the major concerns. Current reticle inspection tools available on the market sometimes are not capable of consistently differentiating between an OPC feature and a true random defect. Due to the process complexity and high cost associated with the making of OPC/PSM reticles, it is important for both mask shops and lithography engineers to understand the impact of different defect types and sizes to the printability. Aerial Image Measurement System (AIMS) has been used in the mask shops for a number of years for reticle applications such as aerial image simulation and transmission measurement of repaired defects. The Virtual Stepper System (VSS) provides an alternative method to do defect printability simulation and analysis using reticle images captured by an optical inspection or review system. In this paper, pre- programmed defects and repairs from a Defect Sensitivity Monitor (DSM) reticle with 200 nm minimum features (at 1x) will be studied for printability. The simulated resist lines by AIMS and VSS are both compared to SEM images of resist wafers qualitatively and quantitatively using CD verification.Process window comparison between unrepaired and repaired defects for both good and bad repair cases will be shown. The effect of mask repairs to resist pattern images for the binary mask case will be discussed. AIMS simulation was done at the International Sematech, Virtual stepper simulation at Zygo and resist wafers were processed at AMD-Submicron Development Center using a DUV lithographic process for 0.18 micrometer Logic process technology.

A pattern-based method to automate mask inspection files

NASA Astrophysics Data System (ADS)

Kamal Baharin, Ezni Aznida Binti; Muhsain, Mohamad Fahmi Bin; Ahmad Ibrahim, Muhamad Asraf Bin; Ahmad Noorhani, Ahmad Nurul Ihsan Bin; Sweis, Jason; Lai, Ya-Chieh; Hurat, Philippe

2017-03-01

Mask inspection is a critical step in the mask manufacturing process in order to ensure all dimensions printed are within the needed tolerances. This becomes even more challenging as the device nodes shrink and the complexity of the tapeout increases. Thus, the amount of measurement points and their critical dimension (CD) types are increasing to ensure the quality of the mask. In addition to the mask quality, there is a significant amount of manpower needed when the preparation and debugging of this process are not automated. By utilizing a novel pattern search technology with the ability to measure and report match region scan-line (edge) measurements, we can create a flow to find, measure and mark all metrology locations of interest and provide this automated report to the mask shop for inspection. A digital library is created based on the technology product and node which contains the test patterns to be measured. This paper will discuss how these digital libraries will be generated and then utilized. As a time-critical part of the manufacturing process, this can also reduce the data preparation cycle time, minimize the amount of manual/human error in naming and measuring the various locations, reduce the risk of wrong/missing CD locations, and reduce the amount of manpower needed overall. We will also review an example pattern and how the reporting structure to the mask shop can be processed. This entire process can now be fully automated.

The technical consideration of multi-beam mask writer for production

NASA Astrophysics Data System (ADS)

Lee, Sang Hee; Ahn, Byung-Sup; Choi, Jin; Shin, In Kyun; Tamamushi, Shuichi; Jeon, Chan-Uk

2016-10-01

Multi-beam mask writer is under development to solve the throughput and patterning resolution problems in VSB mask writer. Theoretically, the writing time is appropriate for future design node and the resolution is improved with multi-beam mask writer. Many previous studies show the feasible results of resolution, CD control and registration. Although such technical results of development tool seem to be enough for mass production, there are still many unexpected problems for real mass production. In this report, the technical challenges of multi-beam mask writer are discussed in terms of production and application. The problems and issues are defined based on the performance of current development tool compared with the requirements of mask quality. Using the simulation and experiment, we analyze the specific characteristics of electron beam in multi-beam mask writer scheme. Consequently, we suggest necessary specifications for mass production with multi-beam mask writer in the future.

Art of the Pacific Islands. [CD-ROM].

ERIC Educational Resources Information Center

Pacific Resources for Education and Learning, Honolulu, HI.

Oceanic art has long been recognized for its quality and its influence on Western art. This CD-ROM presents over 100 of the finest examples of art from the Pacific region in the form of museum photos, contemporary video segments, and music. The CD-ROM includes such artifacts as masks and carvings from Melanesia, canoes and storyboards from…

Real-time line-width measurements: a new feature for reticle inspection systems

NASA Astrophysics Data System (ADS)

Eran, Yair; Greenberg, Gad; Joseph, Amnon; Lustig, Cornel; Mizrahi, Eyal

1997-07-01

The significance of line width control in mask production has become greater with the lessening of defect size. There are two conventional methods used for controlling line widths dimensions which employed in the manufacturing of masks for sub micron devices. These two methods are the critical dimensions (CD) measurement and the detection of edge defects. Achieving reliable and accurate control of line width errors is one of the most challenging tasks in mask production. Neither of the two methods cited above (namely CD measurement and the detection of edge defects) guarantees the detection of line width errors with good sensitivity over the whole mask area. This stems from the fact that CD measurement provides only statistical data on the mask features whereas applying edge defect detection method checks defects on each edge by itself, and does not supply information on the combined result of error detection on two adjacent edges. For example, a combination of a small edge defect together with a CD non- uniformity which are both within the allowed tolerance, may yield a significant line width error, which will not be detected using the conventional methods (see figure 1). A new approach for the detection of line width errors which overcomes this difficulty is presented. Based on this approach, a new sensitive line width error detector was developed and added to Orbot's RT-8000 die-to-database reticle inspection system. This innovative detector operates continuously during the mask inspection process and scans (inspects) the entire area of the reticle for line width errors. The detection is based on a comparison of measured line width that are taken on both the design database and the scanned image of the reticle. In section 2, the motivation for developing this new detector is presented. The section covers an analysis of various defect types, which are difficult to detect using conventional edge detection methods or, alternatively, CD measurements. In section 3, the basic concept of the new approach is introduced together with a description of the new detector and its characteristics. In section 4, the calibration process that took place in order to achieve reliable and repeatable line width measurements is presented. The description of an experiments conducted in order to evaluate the sensitivity of the new detector is given in section 5, followed by a report of the results of this evaluation. The conclusions are presented in section 6.

Evaluation of TF11 attenuated-PSM mask blanks with DUV laser patterning

NASA Astrophysics Data System (ADS)

Xing, Kezhao; Björnberg, Charles; Karlsson, Henrik; Paulsson, Adisa; Beiming, Peter; Vedenpää, Jukka; Walford, Jonathan

2008-05-01

Tightening requirements on resolution, CD uniformity and positional accuracy push the development of improved photomask blanks. One such blank for 45nm node attenuated phase shift masks (att-PSM) provides a thinner chrome film, TF11, with a higher etch rate compared to previous generation NTAR5 att-PSM blanks from the same supplier. FEP-171, a positive chemically amplified resist, is commonly used in mask manufacturing for both e-beam and DUV laser pattern generators. TF11 chrome allows the FEP-171 resist thickness to be decreased at least down to 2000 Å while maintaining sufficient etch resistance, thereby improving photomask CD performance. The lower stress level in TF11 chrome films also reduces the image placement error induced by the material. In this study, TF11 chrome and FEP-171 resist are evaluated with exposures on a 248 nm DUV laser pattern generator, the Sigma7500. Patterning is first characterized for resist thicknesses of 2000 Å to 2600 Å in steps of 100 Å, assessing the minimum feature resolution, CD linearity, isolated-dense CD bias and dose sensitivity. Swing curve analysis shows a minimum near 2200 Å and a maximum near 2500 Å, corresponding closely to the reflectivity measurements provided by the blank supplier. The best overall patterning performance is obtained when operating near the swing maximum. The patterning performance is then studied in more detail with a resist thickness of 2550 Å that corresponds to the reflectivity maximum. This is compared to the results with 2000 Å resist, a standard thickness for e-beam exposures on TF11. The lithographic performance on NTAR5 att-PSM blanks with 3200 Å resist is also included for reference. This evaluation indicates that TF11 blanks with 2550 Å resist provide the best overall mask patterning performance obtained with the Sigma7500, showing a global CD uniformity below 4 nm (3s) and minimum feature resolution below 100 nm.

SU-8 negative photoresist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Bogdanov, Alexei L.

2000-06-01

The requirements for better control, linearity, and uniformity of critical dimension (CD) on photomasks in fabrication of 180 and 150 nm generation devices result in increasing demand for thinner, more etching durable, and more sensitive e-beam resists. Novolac based resists with chemical amplification have been a choice for their sensitivity and stability during etching. However, difficult CD control due to the acid catalyzer diffusion and quite narrow post exposure bake (PEB) process window are some of the major drawbacks of these resists. SU-8 is recently introduced to the market negative photoresist. High sensitivity, fairly good adhesion properties, and relatively simple processing of SU-8 make it a good substitution for novolac based chemically amplified negative e-beam resists in optical mask manufacturing. The replacement of traditional chemically amplified resists by SU- 8 can increase the process latitude and reduce resist costs. Among the obvious drawbacks of SU-8 are the use of solvent- based developer and demand of oxygen plasma for resist removal. In this paper the use of SU-8 for optical mask manufacturing is reported. All steps of resist film preparation, exposure and development are paid a share of attention. Possibilities to use reactive ion etching (RIE) with oxygen in order to increase resist mask contrast are discussed. Special exposure strategy (pattern outlining) was employed to further improve the edge definition. The resist PEB temperature and time were studied to estimate their weight in overall CD control performance. Specially designed test patterns with 0.25 micrometer design rule could be firmly transferred into a chromium layer both by wet etching and ion milling. Influence of exposure dose variation on the pattern CD change was studied.

Lithographic performance comparison with various RET for 45-nm node with hyper NA

NASA Astrophysics Data System (ADS)

Adachi, Takashi; Inazuki, Yuichi; Sutou, Takanori; Kitahata, Yasuhisa; Morikawa, Yasutaka; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya

2006-05-01

In order to realize 45 nm node lithography, strong resolution enhancement technology (RET) and water immersion will be needed. In this research, we discussed about various RET performance comparison for 45 nm node using 3D rigorous simulation. As a candidate, we chose binary mask (BIN), several kinds of attenuated phase-shifting mask (att-PSM) and chrome-less phase-shifting lithography mask (CPL). The printing performance was evaluated and compared for each RET options, after the optimizing illumination conditions, mask structure and optical proximity correction (OPC). The evaluation items of printing performance were CD-DOF, contrast-DOF, conventional ED-window and MEEF, etc. It's expected that effect of mask 3D topography becomes important at 45 nm node, so we argued about not only the case of ideal structures, but also the mask topography error effects. Several kinds of mask topography error were evaluated and we confirmed how these errors affect to printing performance.

Study of shape evaluation for mask and silicon using large field of view

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of pattern. •Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the form of the same location of Design, Mask, and Silicon in such a viewpoint. And we report it about algorithm of the image composition in Large Field.

Compensation of long-range process effects on photomasks by design data correction

NASA Astrophysics Data System (ADS)

Schneider, Jens; Bloecker, Martin; Ballhorn, Gerd; Belic, Nikola; Eisenmann, Hans; Keogan, Danny

2002-12-01

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below; the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to reduce big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50-70% depending on pattern details. The data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment.

Mask-induced aberration in EUV lithography

NASA Astrophysics Data System (ADS)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Negative-tone imaging with EUV exposure toward 13nm hp

NASA Astrophysics Data System (ADS)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Yamamoto, Kei; Goto, Takahiro

2016-03-01

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm2. Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm2 to 24 mJ/cm2. On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

The automatic back-check mechanism of mask tooling database and automatic transmission of mask tooling data

NASA Astrophysics Data System (ADS)

Xu, Zhe; Peng, M. G.; Tu, Lin Hsin; Lee, Cedric; Lin, J. K.; Jan, Jian Feng; Yin, Alb; Wang, Pei

2006-10-01

Nowadays, most foundries have paid more and more attention in order to reduce the CD width. Although the lithography technologies have developed drastically, mask data accuracy is still a big challenge than before. Besides, mask (reticle) price also goes up drastically such that data accuracy needs more special treatments.We've developed a system called eFDMS to guarantee the mask data accuracy. EFDMS is developed to do the automatic back-check of mask tooling database and the data transmission of mask tooling. We integrate our own EFDMS systems to engage with the standard mask tooling system K2 so that the upriver and the downriver processes of the mask tooling main body K2 can perform smoothly and correctly with anticipation. The competition in IC marketplace is changing from high-tech process to lower-price gradually. How to control the reduction of the products' cost more plays a significant role in foundries. Before the violent competition's drawing nearer, we should prepare the cost task ahead of time.

In-vitro and in-vivo evaluation of taste-masked cetirizine hydrochloride formulated in oral lyophilisates.

PubMed

Preis, Maren; Grother, Leon; Axe, Philip; Breitkreutz, Jörg

2015-08-01

The use of solid oral dosage forms is typically favored with regard to stability and ease of administration. The aim of this study was to investigate whether cyclodextrins (CD) or ion exchange resins (IER) could be used to taste-mask cetirizine HCl when formulated in a freeze-dried oral formulation. The oral lyophilisates were produced using the Zydis(®) technology that offer the opportunity to produce the dosage form directly in the aluminum laminate blister packs. This study confirmed that a pre-formed resinate of cetirizine HCl and various cyclodextrins can be successfully incorporated into the Zydis(®) oral lyophilisate. A chemically stable product with acceptable release profile was obtained in the case of cyclodextrin. This study has also demonstrated that the Insent(®) taste sensing system is a useful technique for predicting the taste-masking potential of Zydis(®) formulations. The electronic taste sensing system (e-tongue) data can be used to provide guidance on the selection of taste-masked formulations. Principal component analysis (PCA) of sensor data by plotting the PCA scores revealed the effects of used taste-masking techniques on the e-tongue sensors, indicating the successful taste improvement. The PCA plot of the taste sensor data revealed larger distances between the non-taste-masked sample and the CD- and IER-loaded samples, and the shift toward the drug-free formulations and excipient signals indicates a modification of the product taste. The human taste trial confirms the acceptability of the selected promising formulations. The taste evaluation results showed that an effectively taste-masked formulation has been achieved using β-cyclodextrin and cherry/sucralose flavor system with over 80% of volunteers finding the tablet to be acceptable. Copyright © 2015 Elsevier B.V. All rights reserved.

An open-architecture approach to defect analysis software for mask inspection systems

NASA Astrophysics Data System (ADS)

Pereira, Mark; Pai, Ravi R.; Reddy, Murali Mohan; Krishna, Ravi M.

2009-04-01

Industry data suggests that Mask Inspection represents the second biggest component of Mask Cost and Mask Turn Around Time (TAT). Ever decreasing defect size targets lead to more sensitive mask inspection across the chip, thus generating too many defects. Hence, more operator time is being spent in analyzing and disposition of defects. Also, the fact that multiple Mask Inspection Systems and Defect Analysis strategies would typically be in use in a Mask Shop or a Wafer Foundry further complicates the situation. In this scenario, there is a need for a versatile, user friendly and extensible Defect Analysis software that reduces operator analysis time and enables correct classification and disposition of mask defects by providing intuitive visual and analysis aids. We propose a new vendor-neutral defect analysis software, NxDAT, based on an open architecture. The open architecture of NxDAT makes it easily extensible to support defect analysis for mask inspection systems from different vendors. The capability to load results from mask inspection systems from different vendors either directly or through a common interface enables the functionality of establishing correlation between inspections carried out by mask inspection systems from different vendors. This capability of NxDAT enhances the effectiveness of defect analysis as it directly addresses the real-life scenario where multiple types of mask inspection systems from different vendors co-exist in mask shops or wafer foundries. The open architecture also potentially enables loading wafer inspection results as well as loading data from other related tools such as Review Tools, Repair Tools, CD-SEM tools etc, and correlating them with the corresponding mask inspection results. A unique concept of Plug-In interface to NxDAT further enhances the openness of the architecture of NxDAT by enabling end-users to add their own proprietary defect analysis and image processing algorithms. The plug-in interface makes it possible for the end-users to make use of their collected knowledge through the years of experience in mask inspection process by encapsulating the knowledge into software utilities and plugging them into NxDAT. The plug-in interface is designed with the intent of enabling the pro-active mask defect analysis teams to build competitive differentiation into their defect analysis process while protecting their knowledge internally within their company. By providing interface with all major standard layout and mask data formats, NxDAT enables correlation of defect data on reticles with design and mask databases, further extending the effectiveness of defect analysis for D2DB inspection. NxDAT also includes many other advanced features for easy and fast navigation, visual display of defects, defect selection, multi-tier classification, defect clustering and gridding, sophisticated CD and contact measurement analysis, repeatability analysis such as adder analysis, defect trend, capture rate etc.

Development for 2D pattern quantification method on mask and wafer

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Toyoda, Yasutaka; Wang, Zhigang

2010-03-01

We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. 2-dimensional Shape quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. On the other hand, there is roughness in the silicon shape made from a mass-production line. Moreover, there is variation in the silicon shape. For this reason, quantification of silicon shape is important, in order to estimate the performance of a pattern. In order to quantify, the same shape is equalized in two dimensions. And the method of evaluating based on the shape is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. It is possible to analyze variability of the edge of the same position with high precision. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. - Estimate of the correlativity of shape variability and a process margin. - Determination of two-dimensional variability of pattern. - Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the shape of the same location of Design, Mask, and Silicon in such a viewpoint.

Sub-Optical Lithography With Nanometer Definition Masks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

2000-01-01

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

Past and future challenges from a display mask writer perspective

NASA Astrophysics Data System (ADS)

Ekberg, Peter; von Sydow, Axel

2012-06-01

Since its breakthrough, the liquid crystal technology has continued to gain momentum and the LCD is today the dominating display type used in desktop monitors, television sets, mobile phones as well as other mobile devices. To improve production efficiency and enable larger screen sizes, the LCD industry has step by step increased the size of the mother glass used in the LCD manufacturing process. Initially the mother glass was only around 0.1 m2 large, but with each generation the size has increased and with generation 10 the area reaches close to 10 m2. The increase in mother glass size has in turn led to an increase in the size of the photomasks used - currently the largest masks are around 1.6 × 1.8 meters. A key mask performance criterion is the absence of "mura" - small systematic errors captured only by the very sensitive human eye. To eliminate such systematic errors, special techniques have been developed by Micronic Mydata. Some mura suppressing techniques are described in this paper. Today, the race towards larger glass sizes has come to a halt and a new race - towards higher resolution and better image quality - is ongoing. The display mask is therefore going through a change that resembles what the semiconductor mask went through some time ago: OPC features are introduced, CD requirements are increasing sharply and multi tone masks (MTMs) are widely used. Supporting this development, Micronic Mydata has introduced a number of compensation methods in the writer, such as Z-correction, CD map and distortion control. In addition, Micronic Mydata MMS15000, the world's most precise large area metrology tool, has played an important role in improving mask placement quality and is briefly described in this paper. Furthermore, proposed specifications and system architecture concept for a new generation mask writers - able to fulfill future image quality requirements - is presented in this paper. This new system would use an AOD/AOM writing engine and be capable of resolving 0.6 micron features.

Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

NASA Astrophysics Data System (ADS)

Kim, In-Seon; Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

2015-07-01

The usage of the extreme ultraviolet (EUV) pellicle is regarded as the solution for defect control since it can protect the mask from airborne debris. However some obstacles disrupt real-application of the pellicle such as structural weakness, thermal damage and so on. For these reasons, flawless fabrication of the pellicle is impossible. In this paper, we discuss the influence of deformed pellicle in terms of non-uniform intensity distribution and critical dimension (CD) uniformity. It was found that non-uniform intensity distribution is proportional to local tilt angle of pellicle and CD variation was linearly proportional to transmission difference. When we consider the 16 nm line and space pattern with dipole illumination (σc=0.8, σr=0.1, NA=0.33), the transmission difference (max-min) of 0.7 % causes 0.1 nm CD uniformity. Influence of gravity caused deflection to the aerial image is small enough to ignore. CD uniformity is less than 0.1 nm even for the current gap of 2 mm between mask and pellicle. However, heat caused EUV pellicle wrinkle might cause serious image distortion because a wrinkle of EUV pellicle causes a transmission loss variation as well as CD non-uniformity. In conclusion, local angle of a wrinkle, not a period or an amplitude of a wrinkle is a main factor to CD uniformity, and local angle of less than ~270 mrad is needed to achieve 0.1 nm CD uniformity with 16 nm L/S pattern.

Development of a robust reverse tone pattern transfer process

NASA Astrophysics Data System (ADS)

Khusnatdinov, Niyaz; Doyle, Gary; Resnick, Douglas J.; Ye, Zhengmao; LaBrake, Dwayne; Milligan, Brennan; Alokozai, Fred; Chen, Jerry

2017-03-01

Pattern transfer is critical to any lithographic technology, and plays a significant role in defining the critical features in a device layer. As both the memory and logic roadmaps continue to advance, greater importance is placed on the scheme used to do the etching. For many critical layers, a need has developed which requires a multilayer stack to be defined in order to perform the pattern transfer. There are many cases however, where this standard approach does not provide the best results in terms of critical dimension (CD) fidelity and CD uniformity. As an example, when defining a contact pattern, it may be advantageous to apply a bright field mask (in order to maximize the normalized inverse log slope (NILS)) over the more conventional dark field mask. The result of applying the bright field mask in combination with positive imaging resist is to define an array of pillar patterns, which then must be converted back to holes before etching the underlying dielectric material. There have been several publications on tone reversal that is introduced in the resist process itself, but often an etch transfer process is applied to reverse the pattern tone. The purpose of this paper is to describe the use of a three layer reverse tone process (RTP) that is capable of reversing the tone of every printed feature type. The process utilizes a resist pattern, a hardmask layer and an additional protection layer. The three layer approach overcomes issues encountered when using a single masking layer. Successful tone reversal was demonstrated both on 300mm wafers and imprint masks, including the largest features in the pattern, with dimensions as great as 60 microns. Initial in-field CD uniformity is promising. CDs shifted by about 2.6nm and no change was observed in either LER or LWR. Follow-up work is required to statistically qualify in-field CDU and also understand both across wafer uniformity and feature linearity.

Prospects of DUV OoB suppression techniques in EUV lithography

NASA Astrophysics Data System (ADS)

Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

2014-04-01

Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

Improving global CD uniformity by optimizing post-exposure bake and develop sequences

NASA Astrophysics Data System (ADS)

Osborne, Stephen P.; Mueller, Mark; Lem, Homer; Reyland, David; Baik, KiHo

2003-12-01

Improvements in the final uniformity of masks can be shrouded by error contributions from many sources. The final Global CD Uniformity (GCDU) of a mask is degraded by individual contributions of the writing tool, the Post Applied Bake (PAB), the Post Exposure Bake (PEB), the Develop sequence and the Etch step. Final global uniformity will improve by isolating and minimizing the variability of the PEB and Develop. We achieved this de-coupling of the PEB and Develop process from the whole process stream by using "dark loss" which is the loss of unexposed resist during the develop process. We confirmed a correspondence between Angstroms of dark loss and nanometer sized deviations in the chrome CD. A plate with a distinctive dark loss pattern was related to a nearly identical pattern in the chrome CD. This pattern was verified to have originated during the PEB process and displayed a [Δ(Final CD)/Δ(Dark Loss)] ratio of 6 for TOK REAP200 resist. Previous papers have reported a sensitive linkage between Angstroms of dark loss and nanometers in the final uniformity of the written plate. These initial studies reported using this method to improve the PAB of resists for greater uniformity of sensitivity and contrast. Similarly, this paper demonstrates an outstanding optimization of PEB and Develop processes.

The opioid effects of gluten exorphins: asymptomatic celiac disease.

PubMed

Pruimboom, Leo; de Punder, Karin

2015-11-24

Gluten-containing cereals are a main food staple present in the daily human diet, including wheat, barley, and rye. Gluten intake is associated with the development of celiac disease (CD) and related disorders such as diabetes mellitus type I, depression, and schizophrenia. However, until now, there is no consent about the possible deleterious effects of gluten intake because of often failing symptoms even in persons with proven CD. Asymptomatic CD (ACD) is present in the majority of affected patients and is characterized by the absence of classical gluten-intolerance signs, such as diarrhea, bloating, and abdominal pain. Nevertheless, these individuals very often develop diseases that can be related with gluten intake. Gluten can be degraded into several morphine-like substances, named gluten exorphins. These compounds have proven opioid effects and could mask the deleterious effects of gluten protein on gastrointestinal lining and function. Here we describe a putative mechanism, explaining how gluten could "mask" its own toxicity by exorphins that are produced through gluten protein digestion.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

CD4 T cell-mediated masking effects of the immunogenicity of tumor-associated antigens are qualitatively and quantitatively different depending on the individual antigens.

PubMed

Okano, Shinji; Matsumoto, Yoshihiro; Yoshiya, Shohei; Yamashita, Yo-ichi; Harimoto, Norifumi; Ikegami, Toru; Shirabe, Ken; Harada, Mamoru; Yoshikai, Yasunobu; Maehara, Yoshihiko

2013-01-01

The use of cancer immunotherapy as part of multidisciplinary therapies for cancer is a promising strategy for the cure of advanced cancer patients. In cancer immunotherapy, the effective priming of tumor-associated antigen (TAA)-specific CD8+ T cells is essential, and therefore, the appropriate selection of the best peptide for targeting the cancer is a most important concern. One criticism in the selection of a TAA is the immunogenicity of the TAA, the vaccination of which effectively elicits clinical responses. However, the critical basic immunological factors that affect the differences in the immunogenicity of TAAs remain to be elucidated. Here we found that CD4 T-cell responses suppressed the immunogenicity of the concomitant TAA in a murine melanoma model in which intratumoral activated dendritic therapy (ITADT) was used for treatment of the established cancer, and we observed that the antitumor effects were largely dependent on the CD8 T-cell response. CD4 T-cell depletion simply enhanced the tyrosinase-related protein (TRP)-2(180-188) peptide-specific cytotoxic T-cell (CTL) responses, and CD4 T-cell depletion provided immunogenicity for mgp100(25-33) peptide, to which a CTL response could not be detected at all in CD4 T-cell-intact mice in the early therapeutic phase. Further, the mgp100(25-33) peptide-specific CTL response again became undetectable after the recovery of CD4 T cells in previously CD4-depleted, tumor-eradicated mice, whereas the TRP-2(180-188) peptide-specific CTL response was still much stronger in CD4-depleted mice than in CD4-intact mice. These findings suggest that the CD4 T cell-mediated masking effects of the immunogenicity of tumor-associated antigens are qualitatively and quantitatively different depending on the individual antigens.

The flash memory battle: How low can we go?

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Wismans, Onno; Grim, Kees; Finders, Jo; Dusa, Mircea; Birkner, Robert; Richter, Rigo; Scherübl, Thomas

2008-03-01

With the introduction of the TWINSCAN XT:1900Gi the limit of the water based hyper-NA immersion lithography has been reached in terms of resolution. With a numerical aperture of 1.35 a single expose resolution of 36.5nm half pitch has been demonstrated. However the practical resolution limit in production will be closer to 40nm half pitch, without having to go to double patterning alike strategies. In the relentless Flash memory market the performance of the exposure tool is stretched to the limit for a competitive advantage and cost-effective product. In this paper we will present the results of an experimental study of the resolution limit of the NAND-Flash Memory Gate layer for a production-worthy process on the TWINSCAN XT:1900Gi. The entire gate layer will be qualified in terms of full wafer CD uniformity, aberration sensitivities for the different wordlines and feature-center placement errors for 38, 39, 40 and 43nm half pitch design rule. In this study we will also compare the performance of a binary intensity mask to a 6% attenuated phase shift mask and look at strategies to maximize Depth of Focus, and to desensitize the gate layer for lens aberrations and placement errors. The mask is one of the dominant contributors to the CD uniformity budget of the flash gate layer. Therefore the wafer measurements are compared to aerial image measurements of the mask using AIMSTM 45-193i to separate the mask contribution from the scanner contribution to the final imaging performance.

Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

NASA Astrophysics Data System (ADS)

Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

2011-11-01

Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle has been removed from returned masks (after long term usage/exposure in the wafer fab), requires a very aggressive SPM wet clean, that drastically reduces the available budget for mask properties (CD, phase/transmission). We show that CO2aerosol cleaning can be utilized to remove the bulk of the glue residue effectively, while preserving the mask properties. This application required a differently designed nozzle to impart the required removal force for the sticky glue residue. A new nozzle was developed and qualified that resulted in PRE in the range of 92-98%. Results also include data on a patterned mask that was exposed in a lithography stepper in a wafer production environment. On EUV mask, our group has experimentally demonstrated that 50 CO2 cleaning cycles of Ru film on the EUV Front-side resulted in no appreciable reflectivity change, implying that no degradation of the Ru film occurs.

venice: Mask utility

NASA Astrophysics Data System (ADS)

Coupon, Jean

2018-02-01

venice reads a mask file (DS9 or fits type) and a catalogue of objects (ascii or fits type) to create a pixelized mask, find objects inside/outside a mask, or generate a random catalogue of objects inside/outside a mask. The program reads the mask file and checks if a point, giving its coordinates, is inside or outside the mask, i.e. inside or outside at least one polygon of the mask.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Mask data processing in the era of multibeam writers

NASA Astrophysics Data System (ADS)

Abboud, Frank E.; Asturias, Michael; Chandramouli, Maesh; Tezuka, Yoshihiro

2014-10-01

Mask writers' architectures have evolved through the years in response to ever tightening requirements for better resolution, tighter feature placement, improved CD control, and tolerable write time. The unprecedented extension of optical lithography and the myriad of Resolution Enhancement Techniques have tasked current mask writers with ever increasing shot count and higher dose, and therefore, increasing write time. Once again, we see the need for a transition to a new type of mask writer based on massively parallel architecture. These platforms offer a step function improvement in both dose and the ability to process massive amounts of data. The higher dose and almost unlimited appetite for edge corrections open new windows of opportunity to further push the envelope. These architectures are also naturally capable of producing curvilinear shapes, making the need to approximate a curve with multiple Manhattan shapes unnecessary.

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Precision process calibration and CD predictions for low-k1 lithography

NASA Astrophysics Data System (ADS)

Chen, Ting; Park, Sangbong; Berger, Gabriel; Coskun, Tamer H.; de Vocht, Joep; Chen, Fung; Yu, Linda; Hsu, Stephen; van den Broeke, Doug; Socha, Robert; Park, Jungchul; Gronlund, Keith; Davis, Todd; Plachecki, Vince; Harris, Tom; Hansen, Steve; Lambson, Chuck

2005-06-01

Leading resist calibration for sub-0.3 k1 lithography demands accuracy <2nm for CD through pitch. An accurately calibrated resist process is the prerequisite for establishing production-worthy manufacturing under extreme low k1. From an integrated imaging point of view, the following key components must be simultaneously considered during the calibration - high numerical aperture (NA>0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist thin film substrate. For imaging at NA approaching unity, polarized illumination can impact significantly the contrast formation in the resist film stack, and therefore it is an important factor to consider in the CD-based resist calibration. For aggressive DRAM memory core designs at k1<0.3, pattern-specific illumination optimization has proven to be critical for achieving the required imaging performance. Various optimization techniques from source profile optimization with fixed mask design to the combined source and mask optimization have been considered for customer designs and available imaging capabilities. For successful low-k1 process development, verification of the optimization results can only be made with a sufficiently tunable resist model that can predicate the wafer printing accurately under various optimized process settings. We have developed, for resist patterning under aggressive low-k1 conditions, a novel 3D diffusion model equipped with double-Gaussian convolution in each dimension. Resist calibration with the new diffusion model has demonstrated a fitness and CD predication accuracy that rival or outperform the traditional 3D physical resist models. In this work, we describe our empirical approach to achieving the nm-scale precision for advanced lithography process calibrations, using either measured 1D CD through-pitch or 2D memory core patterns. We show that for ArF imaging, the current resist development and diffusion modeling can readily achieve ~1-2nm max CD errors for common 1D through-pitch and aggressive 2D memory core resist patterns. Sensitivities of the calibrated models to various process parameters are analyzed, including the comparison between the measured and modeled (Gaussian or GRAIL) pupil profiles. We also report our preliminary calibration results under selected polarized illumination conditions.

Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes

NASA Astrophysics Data System (ADS)

Glasser, Joshua; Pratt, Tim

2008-10-01

Programmed defect test masks serve the useful purpose of evaluating inspection system sensitivity and capability. It is widely recognized that when evaluating inspection system capability, it is important to understand the actual sensitivity of the inspection system in production; yet unfortunately we have observed that many test masks are a more accurate judge of theoretical sensitivity rather than real-world usable capability. Use of ineffective test masks leave the purchaser of inspection equipment open to the risks of over-estimating the capability of their inspection solution and overspecifying defect sensitivity to their customers. This can result in catastrophic yield loss for device makers. In this paper we examine some of the lithography-related technology advances which place an increasing burden on mask inspection complexity, such as MEEF, defect printability estimation, aggressive OPC, double patterning, and OPC jogs. We evaluate the key inspection system component contributors to successful mask inspection, including what can "go wrong" with these components. We designed and fabricated a test mask which both (a) more faithfully represents actual production use cases; and (b) stresses the key components of the inspection system. This mask's patterns represent 32nm, 36nm, and 45nm logic and memory technology including metal and poly like background patterns with programmed defects. This test mask takes into consideration requirements of advanced lithography, such as MEEF, defect printability, assist features, nearly-repetitive patterns, and data preparation. This mask uses patterns representative of 32nm, 36nm, and 45nm logic, flash, and DRAM technology. It is specifically designed to have metal and poly like background patterns with programmed defects. The mask is complex tritone and was designed for annular immersion lithography.

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

Simulation-based MDP verification for leading-edge masks

NASA Astrophysics Data System (ADS)

Su, Bo; Syrel, Oleg; Pomerantsev, Michael; Hagiwara, Kazuyuki; Pearman, Ryan; Pang, Leo; Fujimara, Aki

2017-07-01

For IC design starts below the 20nm technology node, the assist features on photomasks shrink well below 60nm and the printed patterns of those features on masks written by VSB eBeam writers start to show a large deviation from the mask designs. Traditional geometry-based fracturing starts to show large errors for those small features. As a result, other mask data preparation (MDP) methods have become available and adopted, such as rule-based Mask Process Correction (MPC), model-based MPC and eventually model-based MDP. The new MDP methods may place shot edges slightly differently from target to compensate for mask process effects, so that the final patterns on a mask are much closer to the design (which can be viewed as the ideal mask), especially for those assist features. Such an alteration generally produces better masks that are closer to the intended mask design. Traditional XOR-based MDP verification cannot detect problems caused by eBeam effects. Much like model-based OPC verification which became a necessity for OPC a decade ago, we see the same trend in MDP today. Simulation-based MDP verification solution requires a GPU-accelerated computational geometry engine with simulation capabilities. To have a meaningful simulation-based mask check, a good mask process model is needed. The TrueModel® system is a field tested physical mask model developed by D2S. The GPU-accelerated D2S Computational Design Platform (CDP) is used to run simulation-based mask check, as well as model-based MDP. In addition to simulation-based checks such as mask EPE or dose margin, geometry-based rules are also available to detect quality issues such as slivers or CD splits. Dose margin related hotspots can also be detected by setting a correct detection threshold. In this paper, we will demonstrate GPU-acceleration for geometry processing, and give examples of mask check results and performance data. GPU-acceleration is necessary to make simulation-based mask MDP verification acceptable.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

NASA Astrophysics Data System (ADS)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Development of EUV mask handling technology at MIRAI-Selete

NASA Astrophysics Data System (ADS)

Ota, Kazuya; Amemiya, Mitsuaki; Taguchi, Takao; Kamono, Takashi; Kubo, Hiroyoshi; Takikawa, Tadahiko; Usui, Yoichi; Suga, Osamu

2007-03-01

We, MIRAI-Selete, started a new EUV mask program in April, 2006. Development of EUV mask handling technology is one of the key areas of the program. We plan to develop mask handling technology and to evaluate EUV mask carriers using Lasertec M3350, a particle inspection tool with the defect sensitivity less than 50nm PSL, and Mask Protection Engineering Tool (named "MPE Tool"). M3350 is a newly developed tool based on a conventional M1350 for EUV blanks inspection. Since our M3350 has a blank flipping mechanism in it, we can inspect the front and the back surface of the blank automatically. We plan to use the M3350 for evaluating particle adders during mask shipping, storage and handling. MPE Tool is a special tool exclusively developed for demonstration of pellicleless mask handling. It can handle a mask within a protective enclosure, which Canon and Nikon have been jointly proposing1, and also, can be modified to handle other type of carrier as the need arises.

Investigation to optimize the energy resolution and efficiency of cadmium(zinc)telluride for photon measurements

NASA Astrophysics Data System (ADS)

Kim, Hadong

While the investigations of the Cd(Zn)Te characteristics were completed, a new method to make arbitrary anode shapes, without the troublesome shadow mask technique, was found. With this technique, the two-anode geometry Cd(Zn)Te detector was introduced and tested. The semiconductor performance of the two-anode geometry detectors for the incoming gamma rays of 241Am, 57Co, and 137Cs were compared to the responses of the planar device. The very promising photon energy resolutions of 9.3 and 5.4% FWHM were obtained with the two-anode geometry detector for the gamma rays energies of 122 keV and 662 keV, respectively, while no discernible full energy peaks were apparent with the planar detector. Several simulation programs that are very easy to handle were developed as useful tools for investigating the complicated gamma ray pulse height distributions, which were due to the energy deposition events inside the semiconductors. Comparisons to the known values and with the results from other application programs, validated the information obtained from the simulation programs, which were developed during this research effort. A graphical user interface (GUI) was designed for the user's convenience in order to enter the required input parameters for the specific requirements of each simulation programs. The idealized noise free spectra for the planar detector and for the small pixel geometry detector were successfully obtained by applying Monte Carlo techniques.

OPC and PSM design using inverse lithography: a nonlinear optimization approach

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Milanfar, Peyman

2006-03-01

We propose a novel method for the fast synthesis of low complexity model-based optical proximity correction (OPC) and phase shift masks (PSM) to improve the resolution and pattern fidelity of optical microlithography. We use the pixel-based mask representation, a continuous function formulation, and gradient based iterative optimization techniques to solve the above inverse problem. The continuous function formulation allows analytic calculation of the gradient. Pixel-based parametrization provides tremendous liberty in terms of the features possible in the synthesized masks, but also suffers the inherent disadvantage that the masks are very complex and difficult to manufacture. We therefore introduce the regularization framework; a useful tool which provides the flexibility to promote certain desirable properties in the solution. We employ the above framework to ensure that the estimated masks have only two or three (allowable) transmission values and are also comparatively simple and easy to manufacture. The results demonstrate that we are able to bring the CD on target using OPC masks. Furthermore, we were also able to boost the contrast of the aerial image using attenuated, strong, and 100% transmission phase shift masks. Our algorithm automatically (and optimally) adds assist-bars, dog-ears, serifs, anti-serifs, and other custom structures best suited for printing the desired pattern.

In-line verification of linewidth uniformity for 0.18 and below: design rule reticles

NASA Astrophysics Data System (ADS)

Tan, TaiSheng; Kuo, Shen C.; Wu, Clare; Falah, Reuven; Hemar, Shirley; Sade, Amikam; Gottlib, Gidon

2000-07-01

Mask making process development and control is addressed using a reticle inspection tool equipped with the new revolutionized application called LBM-Linewidth Bias Monitoring. In order to use the LBM for mask-making process control, procedures and corresponding test plates are a developed, such that routine monitoring of the manufacturing process discloses process variation and machine variation. At the same time systematic variation are studied and either taken care of or taken into consideration to allow successful production line work. In this paper the contribution of the LBM for mask quality monitoring is studied with respect to dense layers, e.g. DRAM. Another aspect of this application - the detection of very small CD mis-uniformity areas is discussed.

Mask characterization for CDU budget breakdown in advanced EUV lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2012-11-01

As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget Breakdown per product/process and Litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps to extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Lithography-based automation in the design of program defect masks

NASA Astrophysics Data System (ADS)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Managing effects in CD control from PED and PEB in advanced DUV photomask manufacturing using FEP-171 resist

NASA Astrophysics Data System (ADS)

Paulsson, Adisa; Xing, Kezhao; Fosshaug, Hans; Lundvall, Axel; Bjoernberg, Charles; Karlsson, Johan

2005-05-01

A continuing improvement in resist process is a necessity for high-end photomask fabrication. In advanced chemically amplified resist systems the lithographic performance is strongly influenced by diffusion of acid and acid quencher (i.e. bases). Beside the resist properties, e.g. size and volatility of the photoacid, the process conditions play important roles for the diffusion control. Understanding and managing these properties influences lithographic characteristics on the photomask such as CD uniformity, CD and pitch linearity, resolution, substrate contamination, clear-dark bias and iso-dense bias. In this paper we have investigated effects on the lithographic characteristics with respect to post exposure bake conditions, when using the chemically amplified resist FEP-171. We used commercially available mask blanks from the Hoya Mask Blank Division with NTAR7 chrome and an optimized resist thickness for the 248 nm laser tool at 3200Å. The photomasks were exposed on the optical DUV (248nm) Sigma7300 pattern generator. Additionally, we investigated the image stability between exposure and post exposure bake. Unlike in wafer fabrication, photomask writing requires several hours, making the resist susceptible to image blur and acid latent image degradation.

Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

NASA Astrophysics Data System (ADS)

Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

2002-07-01

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks

NASA Astrophysics Data System (ADS)

Sherwin, Stuart; Neureuther, Andrew; Naulleau, Patrick

2017-10-01

Achieving high-throughput extreme ultraviolet (EUV) patterning remains a major challenge due to low source power; phase-shift masks can help solve this challenge for dense features near the resolution limit by creating brighter images than traditional absorber masks when illuminated with the same source power. We explore applications of etched multilayer phase-shift masks for EUV lithography, both in the current-generation 0.33 NA and next-generation 0.55 NA systems. We derive analytic formulas for the thin-mask throughput gains, which are 2.42× for lines and spaces and 5.86× for contacts compared with an absorber mask with dipole and quadrupole illumination, respectively. Using rigorous finite-difference time-domain simulations, we quantify variations in these gains by pitch and orientation, finding 87% to 113% of the thin-mask value for lines and spaces and a 91% to 99% for contacts. We introduce an edge placement error metric, which accounts for CD errors, relative feature motion, and telecentricity errors, and use this metric both to optimize mask designs for individual features and to explore which features can be printed on the same mask. Furthermore, we find that although partial coherence shrinks the process window, at an achievable sigma of 0.2 we obtain a depth of focus of 340 nm and an exposure latitude of 39.2%, suggesting that partial coherence will not limit the feasibility of this technology. Finally, we show that many problems such as sensitivity to etch uniformity can be greatly mitigated using a central obscuration in the imaging pupil.

Ordered CdTe/CdS Arrays for High-Performance Solar Cells

NASA Astrophysics Data System (ADS)

Zubía, David; López, Cesar; Rodríguez, Mario; Escobedo, Arev; Oyer, Sandra; Romo, Luis; Rogers, Scott; Quiñónez, Stella; McClure, John

2007-12-01

The deposition of uniform arrays of CdTe/CdS heterostructures suitable for solar cells via close-spaced sublimation is presented. The approach used to create the arrays consists of two basic steps: the deposition of a patterned growth mask on CdS, and the selective-area deposition of CdTe. CdTe grains grow selectively on the CdS but not on the SiO2 due to the differential surface mobility between the two surfaces. Furthermore, the CdTe mesas mimic the size and shape of the window opening in the SiO2. Measurements of the current density in the CdTe were high at 28 mA/cm2. To our knowledge, this is the highest reported current density for these devices. This implies that either the quantum efficiency is very high or the electrons generated throughout the CdTe are being concentrated by the patterned structure analogous to solar concentration. The enhancement in crystal uniformity and the relatively unexplored current concentration phenomenon could lead to significant performance improvements.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Hot spot variability and lithography process window investigation by CDU improvement using CDC technique

NASA Astrophysics Data System (ADS)

Thamm, Thomas; Geh, Bernd; Djordjevic Kaufmann, Marija; Seltmann, Rolf; Bitensky, Alla; Sczyrba, Martin; Samy, Aravind Narayana

2018-03-01

Within the current paper, we will concentrate on the well-known CDC technique from Carl Zeiss to improve the CD distribution of the wafer by improving the reticle CDU and its impact on hotspots and Litho process window. The CDC technique uses an ultra-short pulse laser technology, which generates a micro-level Shade-In-Element (also known as "Pixels") into the mask quartz bulk material. These scatter centers are able to selectively attenuate certain areas of the reticle in higher resolution compared to other methods and thus improve the CD uniformity. In a first section, we compare the CDC technique with scanner dose correction schemes. It becomes obvious, that the CDC technique has unique advantages with respect to spatial resolution and intra-field flexibility over scanner correction schemes, however, due to the scanner flexibility across wafer both methods are rather complementary than competing. In a second section we show that a reference feature based correction scheme can be used to improve the CDU of a full chip with multiple different features that have different MEEF and dose sensitivities. In detail we will discuss the impact of forward scattering light originated by the CDC pixels on the illumination source and the related proximity signature. We will show that the impact on proximity is small compared to the CDU benefit of the CDC technique. Finally we show to which extend the reduced variability across reticle will result in a better common electrical process window of a whole chip design on the whole reticle field on wafer. Finally we will discuss electrical verification results between masks with purposely made bad CDU that got repaired by the CDC technique versus inherently good "golden" masks on a complex logic device. No yield difference is observed between the repaired bad masks and the masks with good CDU.

Evaluation of attenuated PSM photomask blanks with TF11 chrome and FEP-171 resist on a 248 nm DUV laser pattern generator

NASA Astrophysics Data System (ADS)

Xing, Kezhao; Björnborg, Charles; Karlsson, Henrik; Paulsson, Adisa; Rosendahl, Anna; Beiming, Peter; Vedenpää, Jukka; Walford, Jonathan; Newman, Tom

2007-10-01

Tighter requirements on mask resolution, CD and image positioning accuracy at and beyond the 45 nm technology node push the development of improved photomask blanks. One such blank for attenuated phase-shift masks (att-PSM) provides a thinner chrome film, named TF11, with higher chrome etch rate compared to the previous generation Att- PSM blank (NTAR5 chrome film) from the same supplier. Reduced stress in the chrome film also results in less image placement error induced by the material. FEP-171 is the positive chemically amplified resist (PCAR) that is most commonly used in advanced mask manufacturing with both 50 keV variable shaped e-beam (VSB) and DUV laser pattern generators. TF11 allows an FEP-171 resist film down to about 2000 Å thickness with sufficient etch resistance, while the standard resist thickness for NTAR5 is around 3000 Å. This work has experimentally evaluated the use of TF11 chrome and FEP-171 resist together with a 248 nm DUV laser pattern generator, the Sigma7500. First, patterning performance in resist with thicknesses from 2000 Å to 2600 Å, in steps of 100 Å, was tested with respect to swing curve and basic lithographic parameters including resolution, CD linearity, CD iso-dense bias and dose sensitivity. Patterning results on mask showed a swing minimum at around 2200 Å and a swing maximum at around 2500 Å, which correspond to reflectivity measurements for 248 nm wavelength performed by the blank supplier. It was concluded that the overall patterning performance was best close to the swing maximum. Thereafter the patterning performance using TF11 at two resist thicknesses, 2000 Å and 2550 Å, was studied in more detail and compared to performance using NTAR5 with 3200 Å resist. The evaluation showed that the Sigma7500-II offers good compatibility with TF11, especially using the optimized FEP-171 resist thickness of 2550 Å. It also showed that the patterning capability of the Sigma7500-II using TF11 and 2550 Å resist is improved compared to using NTAR5 and 3200 Å resist.

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Effects of cyclodextrins on the flavor of goat milk and its yogurt.

PubMed

Young, O A; Gupta, R B; Sadooghy-Saraby, S

2012-02-01

Goat milk fat includes several branched chain fatty acids (BCFAs), like 4-methyloctanoic acid, which when free, are responsible for goaty flavor. This flavor limits the market opportunities for goat milk. Prior research showed that cyclodextrins (CDs) can reduce goaty flavor, presumably by binding free fatty acids. This research extends that observation. In odor ranking trials in citrate buffer at pH 4.8, β-CD concentrations between 0% and 0.35% were increasingly effective in reducing odor intensity due to 4-methyloctanoic acid, but only when present in high molar excess. α-CD was also effective, but γ-CD was not. In lipase-treated goat milk only β-CD was effective but at much lower molar excess, a difference potentially explained by several factors. One was that BCFAs bind to CDs in marked preference to their straight chain isomers. Displacement experiments with phenolphthalein disproved that hypothesis. The ability of β-CD to reduce goaty flavor intensity extended to yogurt. An analytical panel showed that flavor of goat yogurt was reduced by addition of β-CD, but only if added before heating and fermentation. A hedonic trial showed that consumers preferred unsweetened and sweet/vanilla-flavored goat yogurt more when β-CD was included, P = 0.004 and 0.016, respectively. Males liked all yogurts more than females (P < 0.01), but there was a treatment × gender interaction (P = 0.016) for sweet/vanilla yogurt: sweet/vanilla masked the goaty flavor for males but not females. This results parallels previously demonstrated gender effects for sheepmeat flavor caused by BCFAs. β-Cyclodextrin masks goaty flavor in yogurt, and with its GRAS status means it could be used in commercial goat yogurts and similar products so the real or perceived nutritional advantages of goat milk are not lost to goaty flavor. © 2012 Institute of Food Technologists®

An innovative peer assessment approach to enhance guideline adherence in physical therapy: single-masked, cluster-randomized controlled trial.

PubMed

Maas, Marjo J M; van der Wees, Philip J; Braam, Carla; Koetsenruijter, Jan; Heerkens, Yvonne F; van der Vleuten, Cees P M; Nijhuis-van der Sanden, Maria W G

2015-04-01

Clinical practice guidelines (CPGs) are not readily implemented in clinical practice. One of the impeding factors is that physical therapists do not hold realistic perceptions of their adherence to CPGs. Peer assessment (PA) is an implementation strategy that aims at improving guideline adherence by enhancing reflective practice, awareness of professional performance, and attainment of personal goals. The purpose of this study was to compare the effectiveness of PA with the usual case discussion (CD) strategy on adherence to CPGs for physical therapist management of upper extremity complaints. A single-masked, cluster-randomized controlled trial with pretest-posttest design was conducted. Twenty communities of practice (n=149 physical therapists) were randomly assigned to groups receiving PA or CD, with both interventions consisting of 4 sessions over 6 months. Both PA and CD groups worked on identical clinical cases relevant to the guidelines. Peer assessment focused on individual performance observed and evaluated by peers; CD focused on discussion. Guideline adherence was measured with clinical vignettes, reflective practice was measured with the Self-Reflection and Insight Scale (SRIS), awareness of performance was measured via the correlation between perceived and assessed improvement, and attainment of personal goals was measured with written commitments to change. The PA groups improved more on guideline adherence compared with the CD groups (effect=22.52; 95% confidence interval [95% CI]=2.38, 42.66; P=.03). The SRIS scores did not differ between PA and CD groups. Awareness of performance was greater for the PA groups (r=.36) than for the CD groups (r=.08) (effect=14.73; 95% CI=2.78, 26.68; P=.01). The PA strategy was more effective than the CD strategy in attaining personal goals (effect=0.50; 95% CI=0.04, 0.96; P=.03). Limited validity of clinical vignettes as a proxy measure of clinical practice was a limitation of the study. Peer assessment was more effective than CD in improving adherence to CPGs. Personal feedback may have contributed to its effectiveness. Future research should address the role of the group coach. © 2015 American Physical Therapy Association.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

Automated aerial image based CD metrology initiated by pattern marking with photomask layout data

NASA Astrophysics Data System (ADS)

Davis, Grant; Choi, Sun Young; Jung, Eui Hee; Seyfarth, Arne; van Doornmalen, Hans; Poortinga, Eric

2007-05-01

The photomask is a critical element in the lithographic image transfer process from the drawn layout to the final structures on the wafer. The non-linearity of the imaging process and the related MEEF impose a tight control requirement on the photomask critical dimensions. Critical dimensions can be measured in aerial images with hardware emulation. This is a more recent complement to the standard scanning electron microscope measurement of wafers and photomasks. Aerial image measurement includes non-linear, 3-dimensional, and materials effects on imaging that cannot be observed directly by SEM measurement of the mask. Aerial image measurement excludes the processing effects of printing and etching on the wafer. This presents a unique contribution to the difficult process control and modeling tasks in mask making. In the past, aerial image measurements have been used mainly to characterize the printability of mask repair sites. Development of photomask CD characterization with the AIMS TM tool was motivated by the benefit of MEEF sensitivity and the shorter feedback loop compared to wafer exposures. This paper describes a new application that includes: an improved interface for the selection of meaningful locations using the photomask and design layout data with the Calibre TM Metrology Interface, an automated recipe generation process, an automated measurement process, and automated analysis and result reporting on a Carl Zeiss AIMS TM system.

A study of phase defect measurement on EUV mask by multiple detectors CD-SEM

NASA Astrophysics Data System (ADS)

Yonekura, Isao; Hakii, Hidemitsu; Morisaki, Shinya; Murakawa, Tsutomu; Shida, Soichi; Kuribara, Masayuki; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki

2013-06-01

We have studied MVM (Multi Vision Metrology) -SEM® E3630 to measure 3D shape of defects. The four detectors (Detector A, B, C and D) are independently set up in symmetry for the primary electron beam axis. Signal processing of four direction images enables not only 2D (width) measurement but also 3D (height) measurement. At last PMJ, we have investigated the relation between the E3630's signal of programmed defect on MoSi-HT and defect height measured by AFM (Atomic Force Microscope). It was confirmed that height of integral profile by this tool is correlated with AFM. It was tested that E3630 has capability of observing multilayer defect on EUV. We have investigated correlation with AFM of width and depth or height of multilayer defect. As the result of observing programmed defects, it was confirmed that measurement result by E3630 is well correlated with AFM. And the function of 3D view image enables to show nm order defect.

In silico Analysis of HIV-1 Env-gp120 Reveals Structural Bases for Viral Adaptation in Growth-Restrictive Cells

PubMed Central

Yokoyama, Masaru; Nomaguchi, Masako; Doi, Naoya; Kanda, Tadahito; Adachi, Akio; Sato, Hironori

2016-01-01

Variable V1/V2 and V3 loops on human immunodeficiency virus type 1 (HIV-1) envelope-gp120 core play key roles in modulating viral competence to recognize two infection receptors, CD4 and chemokine-receptors. However, molecular bases for the modulation largely remain unclear. To address these issues, we constructed structural models for a full-length gp120 in CD4-free and -bound states. The models showed topologies of gp120 surface loop that agree with those in reported structural data. Molecular dynamics simulation showed that in the unliganded state, V1/V2 loop settled into a thermodynamically stable arrangement near V3 loop for conformational masking of V3 tip, a potent neutralization epitope. In the CD4-bound state, however, V1/V2 loop was rearranged near the bound CD4 to support CD4 binding. In parallel, cell-based adaptation in the absence of anti-viral antibody pressures led to the identification of amino acid substitutions that individually enhance viral entry and growth efficiencies in association with reduced sensitivity to CCR5 antagonist TAK-779. Notably, all these substitutions were positioned on the receptors binding surfaces in V1/V2 or V3 loop. In silico structural studies predicted some physical changes of gp120 by substitutions with alterations in viral replication phenotypes. These data suggest that V1/V2 loop is critical for creating a gp120 structure that masks co-receptor binding site compatible with maintenance of viral infectivity, and for tuning a functional balance of gp120 between immune escape ability and infectivity to optimize HIV-1 replication fitness. PMID:26903989

On numerical reconstructions of lithographic masks in DUV scatterometry

NASA Astrophysics Data System (ADS)

Henn, M.-A.; Model, R.; Bär, M.; Wurm, M.; Bodermann, B.; Rathsfeld, A.; Gross, H.

2009-06-01

The solution of the inverse problem in scatterometry employing deep ultraviolet light (DUV) is discussed, i.e. we consider the determination of periodic surface structures from light diffraction patterns. With decreasing dimensions of the structures on photo lithography masks and wafers, increasing demands on the required metrology techniques arise. Scatterometry as a non-imaging indirect optical method is applied to periodic line structures in order to determine the sidewall angles, heights, and critical dimensions (CD), i.e., the top and bottom widths. The latter quantities are typically in the range of tens of nanometers. All these angles, heights, and CDs are the fundamental figures in order to evaluate the quality of the manufacturing process. To measure those quantities a DUV scatterometer is used, which typically operates at a wavelength of 193 nm. The diffraction of light by periodic 2D structures can be simulated using the finite element method for the Helmholtz equation. The corresponding inverse problem seeks to reconstruct the grating geometry from measured diffraction patterns. Fixing the class of gratings and the set of measurements, this inverse problem reduces to a finite dimensional nonlinear operator equation. Reformulating the problem as an optimization problem, a vast number of numerical schemes can be applied. Our tool is a sequential quadratic programing (SQP) variant of the Gauss-Newton iteration. In a first step, in which we use a simulated data set, we investigate how accurate the geometrical parameters of an EUV mask can be reconstructed, using light in the DUV range. We then determine the expected uncertainties of geometric parameters by reconstructing from simulated input data perturbed by noise representing the estimated uncertainties of input data. In the last step, we use the measurement data obtained from the new DUV scatterometer at PTB to determine the geometrical parameters of a typical EUV mask with our reconstruction algorithm. The results are compared to the outcome of investigations with two alternative methods namely EUV scatterometry and SEM measurements.

The study of CD side to side error in line/space pattern caused by post-exposure bake effect

NASA Astrophysics Data System (ADS)

Huang, Jin; Guo, Eric; Ge, Haiming; Lu, Max; Wu, Yijun; Tian, Mingjing; Yan, Shichuan; Wang, Ran

2016-10-01

In semiconductor manufacturing, as the design rule has decreased, the ITRS roadmap requires crucial tighter critical dimension (CD) control. CD uniformity is one of the necessary parameters to assure good performance and reliable functionality of any integrated circuit (IC) [1] [2], and towards the advanced technology nodes, it is a challenge to control CD uniformity well. The study of corresponding CD Uniformity by tuning Post-Exposure bake (PEB) and develop process has some significant progress[3], but CD side to side error happening to some line/space pattern are still found in practical application, and the error has approached to over the uniformity tolerance. After details analysis, even though use several developer types, the CD side to side error has not been found significant relationship to the developing. In addition, it is impossible to correct the CD side to side error by electron beam correction as such error does not appear in all Line/Space pattern masks. In this paper the root cause of CD side to side error is analyzed and the PEB module process are optimized as a main factor for improvement of CD side to side error.

"Slit Mask Design for the Giant Magellan Telescope Multi-object Astronomical and Cosmological Spectrograph"

NASA Astrophysics Data System (ADS)

Williams, Darius; Marshall, Jennifer L.; Schmidt, Luke M.; Prochaska, Travis; DePoy, Darren L.

2018-01-01

The Giant Magellan Telescope Multi-object Astronomical and Cosmological Spectrograph (GMACS) is currently in development for the Giant Magellan Telescope (GMT). GMACS will employ slit masks with a usable diameter of approximately 0.450 m for the purpose of multi-slit spectroscopy. Of significant importance are the design constraints and parameters of the multi-object slit masks themselves as well as the means for mapping astronomical targets to physical mask locations. Analytical methods are utilized to quantify deformation effects on a potential slit mask due to thermal expansion and vignetting of target light cones. Finite element analysis (FEA) is utilized to simulate mask flexure in changing gravity vectors. The alpha version of the mask creation program for GMACS, GMACS Mask Simulator (GMS), a derivative of the OSMOS Mask Simulator (OMS), is introduced.

OPC care-area feedforwarding to MPC

NASA Astrophysics Data System (ADS)

Dillon, Brian; Peng, Yi-Hsing; Hamaji, Masakazu; Tsunoda, Dai; Muramatsu, Tomoyuki; Ohara, Shuichiro; Zou, Yi; Arnoux, Vincent; Baron, Stanislas; Zhang, Xiaolong

2016-10-01

Demand for mask process correction (MPC) is growing for leading-edge process nodes. MPC was originally intended to correct CD linearity for narrow assist features difficult to resolve on a photomask without any correction, but it has been extended to main features as process nodes have been shrinking. As past papers have observed, MPC shows improvements in photomask fidelity. Using advanced shape and dose corrections could give more improvements, especially at line-ends and corners. However, there is a dilemma on using such advanced corrections on full mask level because it increases data volume and run time. In addition, write time on variable shaped beam (VSB) writers also increases as the number of shots increases. Optical proximity correction (OPC) care-area defines circuit design locations that require high mask fidelity under mask writing process variations such as energy fluctuation. It is useful for MPC to switch its correction strategy and permit the use of advanced mask correction techniques in those local care-areas where they provide maximum wafer benefits. The use of mask correction techniques tailored to localized post-OPC design can result in similar desired level of data volume, run time, and write time. ASML Brion and NCS have jointly developed a method to feedforward the care-area information from Tachyon LMC to NDE-MPC to provide real benefit for improving both mask writing and wafer printing quality. This paper explains the detail of OPC care-area feedforwarding to MPC between ASML Brion and NCS, and shows the results. In addition, improvements on mask and wafer simulations are also shown. The results indicate that the worst process variation (PV) bands are reduced up to 37% for a 10nm tech node metal case.

Application of advanced structure to multi-tone mask for FPD process

NASA Astrophysics Data System (ADS)

Song, Jin-Han; Jeong, Jin-Woong; Kim, Kyu-Sik; Jeong, Woo-Gun; Yun, Sang-Pil; Lee, Dong-Heok; Choi, Sang-Soo

2017-07-01

In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.

Inline detection of Chrome degradation on binary 193nm photomasks

NASA Astrophysics Data System (ADS)

Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

2013-09-01

193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300mm wafers exposed and the cleaning brought it back almost to its original state after manufacture. Wafer CD, photomask CD and iCDU results can be compared, before and after a standard mask shop cleaning. Measurement points have be chosen in logic areas and SRAM areas, so that their respective behaviours can be studied separately. Transmitted maps before and after cleaning were analysed in terms of CD shift and CDU degradation. The delta map shows a nice correlation with photomask CD shift. iCDU demonstrated the capability to detect a reliable CD range degradation of 5nm on photomask by a comparison between a reference inspection and the current inspection. Die to die inspection mode provides also valuable data, highlighting the degraded chrome sidewalls, more in the photomask centre than on the edges. Ultimately, these results would enable to trigger the preventive cleanings rather than on predefined thresholds. The expected gains for wafer fabs are cost savings (adapted cleanings frequency), increased photomask availability for production, longer photomask lifetime, no additional SEM time neither for photomask nor on wafer.

Face masks and basketball: NCAA division I consumer trends and a review of over-the-counter face masks.

PubMed

Gandy, Jessica R; Fossett, Lela; Wong, Brian J F

2016-05-01

This study aims to: 1) determine the current consumer trends of over-the-counter (OTC) and custom-made face mask usage among National Collegiate Athletic Association (NCAA) Division I athletic programs; and 2) provide a literature review of OTC face guards and a classified database. Literature review and survey. Consumer trends were obtained by contacting all 352 NCAA Division I programs. Athletic trainers present in the office when called answered the following questions: 1) "When an athlete breaks his or her nose, is a custom or generic face guard used?" and 2) "What brand is the generic face guard that is used?" Data was analyzed to determine trends among athletic programs. Also, a database of OTC devices available was generated using PubMed, Google, and manufacturer Web sites. Among the 352 NCAA Division I athletic programs, 254 programs participated in the survey (72% response rate). The majority preferred custom-made guards (46%). Disadvantages included high cost and slow manufacture turnaround time. Only 20% of the programs strictly used generic brands. For the face mask database, 10 OTC products were identified and classified into four categories based on design, with pricing ranging between $35.99 and $69.95. Only a handful of face masks exist for U.S. consumers, but none of them have been reviewed or classified by product design, sport application, price, and collegiate consumer use. This project details usage trends among NCAA Division I athletic programs and provides a list of available devices that can be purchased to protect the nose and face during sports. NA. Laryngoscope, 126:1054-1060, 2016. © 2015 The American Laryngological, Rhinological and Otological Society, Inc.

Mask Analysis Program (MAP) reference manual

NASA Technical Reports Server (NTRS)

Mitchell, C. L.

1976-01-01

A document intended to serve as a User's Manual and a Programmer's Manual for the Mask Analysis Program is presented. The first portion of the document is devoted to the user. It contains all of the information required to execute MAP. The remainder of the document describes the details of MAP software logic. Although the information in this portion is not required to run the program, it is recommended that every user review it to gain an appreciation for the program functions.

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

NASA Astrophysics Data System (ADS)

Jang, Il-Yong; Huh, Sung-Min; Moon, Seong-Yong; Woo, Sang-Gyun; Lee, Jin-Kwan; Moon, Sang Heup; Cho, HanKu

2008-10-01

A patterned TaN substrate, which is candidate for a mask absorber in extreme ultra-violet lithography (EUVL), was etched to have inclined sidewalls by using a Faraday cage system under the condition of a 2-step process that allowed the high etch selectivity of TaN over the resist. The sidewall angle (SWA) of the patterned substrate, which was in the shape of a parallelogram after etching, could be controlled by changing the slope of a substrate holder that was placed in the Faraday cage. The performance of an EUV mask, which contained the TaN absorber of an oblique pattern over the molybdenum/silicon multi-layer, was simulated for different cases of SWA. The results indicated that the optical properties, such as the critical dimension (CD), an offset in the CD bias between horizontal and vertical patterns (H-V bias), and a shift in the image position on the wafer, could be controlled by changing the SWA of the absorber stack. The simulation result showed that the effect of the SWA on the optical properties became more significant at larger thicknesses of the absorber and smaller sizes of the target CD. Nevertheless, the contrast of the aerial images was not significantly decreased because the shadow effect caused by either sidewall of the patterned substrate cancelled with each other.

Cd(II) Sorption on Montmorillonite-Humic acid-Bacteria Composites

PubMed Central

Du, Huihui; Chen, Wenli; Cai, Peng; Rong, Xingmin; Dai, Ke; Peacock, Caroline L.; Huang, Qiaoyun

2016-01-01

Soil components (e.g., clays, bacteria and humic substances) are known to produce mineral-organic composites in natural systems. Herein, batch sorption isotherms, isothermal titration calorimetry (ITC), and Cd K-edge EXAFS spectroscopy were applied to investigate the binding characteristics of Cd on montmorillonite(Mont)-humic acid(HA)-bacteria composites. Additive sorption and non-additive Cd(II) sorption behaviour is observed for the binary Mont-bacteria and ternary Mont-HA-bacteria composite, respectively. Specifically, in the ternary composite, the coexistence of HA and bacteria inhibits Cd adsorption, suggesting a “blocking effect” between humic acid and bacterial cells. Large positive entropies (68.1 ~ 114.4 J/mol/K), and linear combination fitting of the EXAFS spectra for Cd adsorbed onto Mont-bacteria and Mont-HA-bacteria composites, demonstrate that Cd is mostly bound to bacterial surface functional groups by forming inner-sphere complexes. All our results together support the assertion that there is a degree of site masking in the ternary clay mineral-humic acid-bacteria composite. Because of this, in the ternary composite, Cd preferentially binds to the higher affinity components-i.e., the bacteria. PMID:26792640

Apparatus and processes for the mass production of photovoltaic modules

DOEpatents

Barth, Kurt L [Ft. Collins, CO; Enzenroth, Robert A [Fort Collins, CO; Sampath, Walajabad S [Fort Collins, CO

2007-05-22

An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl.sub.2 treatment, and ohmic contact formation, are performed within a single vacuum boundary at modest vacuum pressures. A p+ ohmic contact region is formed by subliming a metal salt onto the CdTe layer. A back electrode is formed by way of a low cost spray process, and module scribing is performed by means of abrasive blasting or mechanical brushing through a mask. The vacuum process apparatus facilitates selective heating of substrates and films, exposure of substrates and films to vapor with minimal vapor leakage, deposition of thin films onto a substrate, and stripping thin films from a substrate. A substrate transport apparatus permits the movement of substrates into and out of vacuum during the thin film deposition processes, while preventing the collection of coatings on the substrate transport apparatus itself.

Apparatus and processes for the mass production of photovotaic modules

DOEpatents

Barth, Kurt L.; Enzenroth, Robert A.; Sampath, Walajabad S.

2002-07-23

An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl.sub.2 treatment, and ohmic contact formation, are performed within a single vacuum boundary at modest vacuum pressures. A p+ ohmic contact region is formed by subliming a metal salt onto the CdTe layer. A back electrode is formed by way of a low cost spray process, and module scribing is performed by means of abrasive blasting or mechanical brushing through a mask. The vacuum process apparatus facilitates selective heating of substrates and films, exposure of substrates and films to vapor with minimal vapor leakage, deposition of thin films onto a substrate, and stripping thin films from a substrate. A substrate transport apparatus permits the movement of substrates into and out of vacuum during the thin film deposition processes, while preventing the collection of coatings on the substrate transport apparatus itself.

Designing to win in sub-90nm mask production

NASA Astrophysics Data System (ADS)

Zhang, Yuan

2005-11-01

An informal survey conducted with key customers by Photronics indicates that the time gap between technology nodes has accelerated in recent years. Previously the cycle was three years. However, between 130nm and 90nm there was less than a 2 year gap, and between 90nm and 65nm a 1.5 year gap exists. As a result, the technical challenges have increased substantially. In addition, mask costs are rising exponentially due to high capital equipment cost, a shrinking customer base, long write times and increased applications of 193nm EAPSM or AAPSM. Collaboration among EDA companies, mask houses and wafer manufacturers is now more important than ever. This paper will explore avenues for reducing mask costs, mainly in the areas of: write-time reduction through design for manufacturing (DFM), and yield improvement through specification relaxation. Our study conducted through layout vertex modeling suggests that a simple design shape such as a square versus a circle or an angled structure helps reduce shot count and write time. Shot count reduction through mask layout optimization, and advancement in new generation E-beam writers can reduce write time up to 65%. An advanced laser writer can produce those less critical E-beam layers in less than half the time of an e-beam writer. Additionally, the emerging imprint lithography brings new life and new challenges to the photomask industry with applications in many fields outside of the semiconductor industry. As immersion lithography is introduced for 45nm device production, polarization and MEEF effects due to the mask will become severe. Larger magnification not only provides benefits on CD control and MEEF, but also extends the life time of current 90nm/65nm tool sets where 45nm mask sets can be produced at a lower cost.

Optimization technique of wavefront coding system based on ZEMAX externally compiled programs

NASA Astrophysics Data System (ADS)

Han, Libo; Dong, Liquan; Liu, Ming; Zhao, Yuejin; Liu, Xiaohua

2016-10-01

Wavefront coding technique as a means of athermalization applied to infrared imaging system, the design of phase plate is the key to system performance. This paper apply the externally compiled programs of ZEMAX to the optimization of phase mask in the normal optical design process, namely defining the evaluation function of wavefront coding system based on the consistency of modulation transfer function (MTF) and improving the speed of optimization by means of the introduction of the mathematical software. User write an external program which computes the evaluation function on account of the powerful computing feature of the mathematical software in order to find the optimal parameters of phase mask, and accelerate convergence through generic algorithm (GA), then use dynamic data exchange (DDE) interface between ZEMAX and mathematical software to realize high-speed data exchanging. The optimization of the rotational symmetric phase mask and the cubic phase mask have been completed by this method, the depth of focus increases nearly 3 times by inserting the rotational symmetric phase mask, while the other system with cubic phase mask can be increased to 10 times, the consistency of MTF decrease obviously, the maximum operating temperature of optimized system range between -40°-60°. Results show that this optimization method can be more convenient to define some unconventional optimization goals and fleetly to optimize optical system with special properties due to its externally compiled function and DDE, there will be greater significance for the optimization of unconventional optical system.

Cluster tool solution for fabrication and qualification of advanced photomasks

NASA Astrophysics Data System (ADS)

Schaetz, Thomas; Hartmann, Hans; Peter, Kai; Lalanne, Frederic P.; Maurin, Olivier; Baracchi, Emanuele; Miramond, Corinne; Brueck, Hans-Juergen; Scheuring, Gerd; Engel, Thomas; Eran, Yair; Sommer, Karl

2000-07-01

The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity especially for OPC pattern and mask defects concerning the impact on wafer level is becoming a key issue for mask quality assessment. As part of the European Community supported ESPRIT projection 'Q-CAP', a new cluster concept has been developed, which allows the combination of hardware tools as well as software tools via network communication. It is designed to be open for any tool manufacturer and mask hose. The bi-directional network access allows the exchange of all relevant mask data including grayscale images, measurement results, lithography parameters, defect coordinates, layout data, process data etc. and its storage to a SQL database. The system uses SEMI format descriptions as well as standard network hardware and software components for the client server communication. Each tool is used mainly to perform its specific application without using expensive time to perform optional analysis, but the availability of the database allows each component to share the full data ste gathered by all components. Therefore, the cluster can be considered as one single virtual tool. The paper shows the advantage of the cluster approach, the benefits of the tools linked together already, and a vision of a mask house in the near future.

CdS thin film solar cells for terrestrial power

NASA Technical Reports Server (NTRS)

Shirland, F. A.

1975-01-01

The development of very low cost long lived Cu2S/CdS thin film solar cells for large scale energy conversion is reported. Excellent evaporated metal grid patterns were obtained using a specially designed aperture mask. Vacuum evaporated gold and copper grids of 50 lines per inch and 1 micron thickness were adequate electrically for the fine mesh contacting grid. Real time roof top sunlight exposure tests of encapsulated CdS cells showed no loss in output after 5 months. Accelerated life testing of encapsulated cells showed no loss of output power after 6 months of 12 hour dark-12 hour AMI illumination cycles at 40 C, 60 C, 80 C and 100 C temperatures. However, the cells changed their basic parameters, such as series and shunt resistance and junction capacitance.

Speech Intelligibility of Aircrew Mask Communication Configurations in High-Noise Environments

DTIC Science & Technology

2017-09-28

ARL-TR-8168 ● Sep 2017 US Army Research Laboratory Speech Intelligibility of Aircrew Mask Communication Configurations in High ...Laboratory Speech Intelligibility of Aircrew Mask Communication Configurations in High -Noise Environments by Kimberly A Pollard and Lamar Garrett...in High - Noise Environments 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Kimberly A Pollard and Lamar

Masking Strategies for Image Manifolds.

PubMed

Dadkhahi, Hamid; Duarte, Marco F

2016-07-07

We consider the problem of selecting an optimal mask for an image manifold, i.e., choosing a subset of the pixels of the image that preserves the manifold's geometric structure present in the original data. Such masking implements a form of compressive sensing through emerging imaging sensor platforms for which the power expense grows with the number of pixels acquired. Our goal is for the manifold learned from masked images to resemble its full image counterpart as closely as possible. More precisely, we show that one can indeed accurately learn an image manifold without having to consider a large majority of the image pixels. In doing so, we consider two masking methods that preserve the local and global geometric structure of the manifold, respectively. In each case, the process of finding the optimal masking pattern can be cast as a binary integer program, which is computationally expensive but can be approximated by a fast greedy algorithm. Numerical experiments show that the relevant manifold structure is preserved through the datadependent masking process, even for modest mask sizes.

Antenna Solar Energy to Electricity Converter (ASETEC)

DTIC Science & Technology

1989-11-01

radiation damage • x-ray masks: all aspects • synchrotron lithography • high brightness compact sources • x-ray lithography system considerations...IB.\\VAlmaden Research Center Cochairs: Daryl Ann Doane, DAD Technologies, Inc.; Elsa Reichmanis, AT&T Bell Laboratories This conferenc’.’ is a...Philips Research- Laboratories/Signetics Corporation DiaSY Nyyssonen, CD Metrology, Inc. Victor Pol, - AT&T Bell Laboratories Elsa Reichmanis

An improved land mask for the SSM/I grid

NASA Technical Reports Server (NTRS)

Martino, Michael G.; Cavalieri, Donald J.; Gloersen, Per; Zwally, H. Jay; Acker, James G. (Editor)

1995-01-01

This paper discusses the development of a new land/ocean/coastline mask for use with Defense Meteorological Satellite Program (DMSP) Special Sensor Microwave/Imager (SSM/I) data, and other types of data which are mapped to the polar stereographic SSM/I grid. Pre-existing land masks were found to disagree, to lack certain land features, and to disagree with land boundaries that are visible in high resolution sensor imagery, such as imagery from the Synthetic Aperture Radar (SAR) on the Earth Resources Satellite (ERS-1). The Digital Chart of the World (DCW) database was initially selected as a source of shoreline data for this effort. Techniques for developing a land mask from these shoreline data are discussed. The resulting land mask, although not perfect, is seen to exhibit significant improvement over previous land mask products.

Optimized distributed computing environment for mask data preparation

NASA Astrophysics Data System (ADS)

Ahn, Byoung-Sup; Bang, Ju-Mi; Ji, Min-Kyu; Kang, Sun; Jang, Sung-Hoon; Choi, Yo-Han; Ki, Won-Tai; Choi, Seong-Woon; Han, Woo-Sung

2005-11-01

As the critical dimension (CD) becomes smaller, various resolution enhancement techniques (RET) are widely adopted. In developing sub-100nm devices, the complexity of optical proximity correction (OPC) is severely increased and applied OPC layers are expanded to non-critical layers. The transformation of designed pattern data by OPC operation causes complexity, which cause runtime overheads to following steps such as mask data preparation (MDP), and collapse of existing design hierarchy. Therefore, many mask shops exploit the distributed computing method in order to reduce the runtime of mask data preparation rather than exploit the design hierarchy. Distributed computing uses a cluster of computers that are connected to local network system. However, there are two things to limit the benefit of the distributing computing method in MDP. First, every sequential MDP job, which uses maximum number of available CPUs, is not efficient compared to parallel MDP job execution due to the input data characteristics. Second, the runtime enhancement over input cost is not sufficient enough since the scalability of fracturing tools is limited. In this paper, we will discuss optimum load balancing environment that is useful in increasing the uptime of distributed computing system by assigning appropriate number of CPUs for each input design data. We will also describe the distributed processing (DP) parameter optimization to obtain maximum throughput in MDP job processing.

Particulate face masks for protection against airborne pathogens - one size does not fit all: an observational study.

PubMed

Winter, Susan; Thomas, Jane H; Stephens, Dianne P; Davis, Joshua S

2010-03-01

To determine the proportion of hospital staff who pass fit tests with each of three commonly used particulate face masks, and factors influencing preference and fit test results. Observational study. 50 healthy hospital staff volunteers in an 18-bed general intensive care unit in an Australian teaching hospital. Participants were administered a questionnaire about mask use and their preferred mask and underwent qualitative fit-testing with each of three different particulate masks: Kimberly-Clark Tecnol FluidShield N95 particulate filter respirator (KC), 3M Flat Fold 9320 particulate respirator and 3M 8822 particulate respirator with exhalation valve. Participants who failed fittesting were trained in correct mask donning, and fittesting was repeated. Proportion of participants who passed the fit test for each mask and the effect of training. The proportion of participants who passed a fit test was low for all three masks tested (KC, 16%; flat fold, 28%; and valved, 34%). Rates improved after training: the first mask tested fitted in 18% of participants pre-training and 40% post-training (P = 0.02). None of the masks fitted for 28% of participants. There were no significant predictors of fit-test results. A large proportion of individuals failed a fit test with any given mask, and we were not able to identify any factors that predicted mask fit in individuals. Training on mask use improved the rates of adequate fit. Hospitals should carry a range of P2 masks, and should conduct systematic P2 mask training and fit-testing programs for all staff potentially exposed to airborne pathogens.

Geographical and pedological drivers of distribution and risks to soil fauna of seven metals (Cd, Cu, Cr, Ni, Pb, V and Zn) in British soils.

PubMed

Spurgeon, David J; Rowland, Philip; Ainsworth, Gillian; Rothery, Peter; Long, Sara; Black, Helaina I J

2008-05-01

Concentrations of seven metals were measured in over 1000 samples as part of an integrated survey. Sixteen metal pairs were significantly positively correlated. Cluster analysis identified two clusters. Metals from the largest (Cr, Cu, Ni, V, Zn), but not the smallest (Cd, Pb) cluster were significantly negatively correlated with spatial location and soil pH and organic matter content. Cd and Pb were not correlated with these parameters, due possibly to the masking effect of recent extensive release. Analysis of trends with soil properties in different habitats indicated that general trends may not necessarily be applicable to all areas. A risk assessment indicated that Zn poses the most widespread direct risk to soil fauna and Cd the least. Any risks associated with high metal concentrations are, however, likely to be greatest in habitats such as arable and horticultural, improved grassland and built up areas where soil metal concentrations are more frequently elevated.

Selected facial measurements of children for oxygen-mask design.

DOT National Transportation Integrated Search

1966-04-01

Requirements for design of oxygen masks and other equipment for effective protection of children in high-altitude flight necessitate a new facial-measurement series. A program to meet this demand was initiated to : 1.select a basic set of standard me...

A procedure and program to calculate shuttle mask advantage

NASA Astrophysics Data System (ADS)

Balasinski, A.; Cetin, J.; Kahng, A.; Xu, X.

2006-10-01

A well-known recipe for reducing mask cost component in product development is to place non-redundant elements of layout databases related to multiple products on one reticle plate [1,2]. Such reticles are known as multi-product, multi-layer, or, in general, multi-IP masks. The composition of the mask set should minimize not only the layout placement cost, but also the cost of the manufacturing process, design flow setup, and product design and introduction to market. An important factor is the quality check which should be expeditious and enable thorough visual verification to avoid costly modifications once the data is transferred to the mask shop. In this work, in order to enable the layer placement and quality check procedure, we proposed an algorithm where mask layers are first lined up according to the price and field tone [3]. Then, depending on the product die size, expected fab throughput, and scribeline requirements, the subsequent product layers are placed on the masks with different grades. The actual reduction of this concept to practice allowed us to understand the tradeoffs between the automation of layer placement and setup related constraints. For example, the limited options of the numbers of layer per plate dictated by the die size and other design feedback, made us consider layer pairing based not only on the final price of the mask set, but also on the cost of mask design and fab-friendliness. We showed that it may be advantageous to introduce manual layer pairing to ensure that, e.g., all interconnect layers would be placed on the same plate, allowing for easy and simultaneous design fixes. Another enhancement was to allow some flexibility in mixing and matching of the layers such that non-critical ones requiring low mask grade would be placed in a less restrictive way, to reduce the count of orphan layers. In summary, we created a program to automatically propose and visualize shuttle mask architecture for design verification, with enhancements to due to the actual application of the code.

Printability and inspectability of programmed pit defects on teh masks in EUV lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.

2010-03-12

Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defectsmore » also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.« less

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Model based high NA anamorphic EUV RET

NASA Astrophysics Data System (ADS)

Jiang, Fan; Wiaux, Vincent; Fenger, Germain; Clifford, Chris; Liubich, Vlad; Hendrickx, Eric

2018-03-01

With the announcement of the extension of the Extreme Ultraviolet (EUV) roadmap to a high NA lithography tool that utilizes anamorphic optics design, an investigation of design tradeoffs unique to the imaging of anamorphic lithography tool is shown. An anamorphic optical proximity correction (OPC) solution has been developed that models fully the EUV near field electromagnetic effects and the anamorphic imaging using the Domain Decomposition Method (DDM). Clips of imec representative for the N3 logic node were used to demonstrate the OPC solutions on critical layers that will benefit from the increased contrast at high NA using anamorphic imaging. However, unlike isomorphic case, from wafer perspective, OPC needs to treat x and y differently. In the paper, we show a design trade-off seen unique to Anamorphic EUV, namely that using a mask rule of 48nm (mask scale), approaching current state of the art, limitations are observed in the available correction that can be applied to the mask. The metal pattern has a pitch of 24nm and CD of 12nm. During OPC, the correction of the metal lines oriented vertically are being limited by the mask rule of 12nm 1X. The horizontally oriented lines do not suffer from this mask rule limitation as the correction is allowed to go to 6nm 1X. For this example, the masks rules will need to be more aggressive to allow complete correction, or design rules and wafer processes (wafer rotation) would need to be created that utilize the orientation that can image more aggressive features. When considering VIA or block level correction, aggressive polygon corner to corner designs can be handled with various solutions, including applying a 45 degree chop. Multiple solutions are discussed with the metrics of edge placement error (EPE) and Process Variation Bands (PVBands), together with all the mask constrains. Noted in anamorphic OPC, the 45 degree chop is maintained at the mask level to meet mask manufacturing constraints, but results in skewed angle edge in wafer level correction. In this paper, we used both contact (Via/block) patterns and metal patterns for OPC practice. By comparing the EPE of horizontal and vertical patterns with a fixed mask rule check (MRC), and the PVBand, we focus on the challenges and the solutions of OPC with anamorphic High-NA lens.

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

Interactions between Neurophysiology and Psychoacoustics: Meeting of the Acoustical Society of America (117th) Held in Syracuse, New York on 22 May 1989

DTIC Science & Technology

1989-06-01

the intensity for which performance equals the chosen value. We use the PEST (parameter estimation by sequential testing; Taylor and Creelman , 1967...forward masking in the auditory nerve." J. Acoust. Soc. Am. 84, 584-591. Taylor, M.M. and Creelman , C.D. (1967). "PEST: Efficient estimates on

Effectiveness of Placebo Therapy for Maintaining Masking in a Clinical Trial of Vergence/Accommodative Therapy

PubMed Central

Kulp, Marjean; Mitchell, G. Lynn; Borsting, Eric; Scheiman, Mitchell; Cotter, Susan; Rouse, Michael; Tamkins, Susanna; Mohney, Brian G.; Toole, Andrew; Reuter, Kathleen

2009-01-01

Purpose To evaluate the effectiveness of the Convergence Insufficiency Treatment Trial (CITT) placebo therapy program in maintaining masking of patients randomized to the office-based treatment arms, determine whether demographic variables affect masking, and determine whether perception of assigned treatment group was associated with treatment outcome or adherence to treatment. Methods Patients (n = 221, ages, 9–17 years) were randomized to one of four treatment groups, two of which were office-based and masked to treatment (n = 114). The placebo therapy program was designed to appear to be real vergence/accommodative therapy, without stimulating vergence, accommodation, or fine saccades (beyond levels of daily visual activities). After treatment, patients in the office-based groups were asked whether they thought they had received real or placebo therapy and how confident they were in their answers. Results Ninety-three percent of patients assigned to real therapy and 85% assigned to placebo therapy thought they were in the real therapy group (P = 0.17). No significant differences were found between the two groups in adherence to the therapy (P ≥ 0.22 for all comparisons). The percentage of patients who thought they were assigned to real therapy did not differ by age, sex, race, or ethnicity (P > 0.30 for all comparisons). No association was found between patients' perception of group assignment and symptoms or signs at outcome (P ≥ 0.38 for all comparisons). Conclusions The CITT placebo therapy program was effective in maintaining patient masking in this study and therefore may have potential for use in future clinical trials using vergence/accommodative therapy. Masking was not affected by demographic variables. Perception of group assignment was not related to symptoms or signs at outcome (ClinicalTrials.gov number, NCT00338611). PMID:19151384

Activating and inhibitory receptors on synovial fluid natural killer cells of arthritis patients: role of CD94/NKG2A in control of cytokine secretion

PubMed Central

de Matos, Cristina Teixeira; Berg, Louise; Michaëlsson, Jakob; Felländer-Tsai, Li; Kärre, Klas; Söderström, Kalle

2007-01-01

Natural killer (NK) cells are activated early during inflammatory events and contribute to the shaping of the ensuing adaptive immune response. To further understand the role for NK cells in inflammation, we investigated the phenotype and function of synovial fluid (SF) NK cells from patients with chronic joint inflammation, as well as from patients with transient inflammation of the knee following trauma. We confirm that synovial NK cells are similar to the well-characterized CD56bright peripheral blood (PB) NK-cell subset present in healthy individuals. However, compared to this PB subset the synovial NK cells express a higher degree of activation markers including CD69 and NKp44, the latter being up-regulated also on CD56bright NK cells in the PB of patients. Activated synovial NK cells produced interferon-γ and tumour necrosis factor, and the production was further up-regulated by antibody masking of CD94/NKG2A, and down-regulated by target cells expressing human leucocyte antigen-E in complex with peptides known to engage CD94/NKG2A. We conclude that synovial NK cells have an activated phenotype and that CD94/NKG2A is a key regulator of synovial NK-cell cytokine synthesis. PMID:17521371

Ligand accessibility to the HIV-1 Env co-receptor binding site can occur prior to CD4 engagement and is independent of viral tier category.

PubMed

Boliar, Saikat; Patil, Shilpa; Shukla, Brihaspati N; Ghobbeh, Ali; Deshpande, Suprit; Chen, Weizao; Guenaga, Javier; Dimitrov, Dimiter S; Wyatt, Richard T; Chakrabarti, Bimal K

2018-06-01

HIV-1 virus entry into target cells requires the envelope glycoprotein (Env) to first bind the primary receptor, CD4 and subsequently the co-receptor. Antibody access to the co-receptor binding site (CoRbs) in the pre-receptor-engaged state, prior to cell attachment, remains poorly understood. Here, we have demonstrated that for tier-1 Envs, the CoRbs is directly accessible to full-length CD4-induced (CD4i) antibodies even before primary receptor engagement, indicating that on these Envs the CoRbs site is either preformed or can conformationally sample post-CD4-bound state. Tier-2 and tier-3 Envs, which are resistant to full-length CD4i antibody, are neutralized by m36.4, a lower molecular mass of CD4i-directed domain antibody. In some tier-2 and tier-3 Envs, CoRbs is accessible to m36.4 even prior to cellular attachment in an Env-specific manner independent of their tier category. These data suggest differential structural arrangements of CoRbs and varied masking of ligand access to the CoRbs in different Env isolates. Copyright © 2018 Elsevier Inc. All rights reserved.

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

A new life for a 10-year old MueTec2010 CD measurement system: the ultimate precision upgrade with additional film thickness measurement capability

NASA Astrophysics Data System (ADS)

Cassol, Gian Luca; Bianucci, Giovanni; Murai, Shiaki; Falk, Günther; Scheuring, Gerd; Döbereiner, Stefan; Brück, Hans-Jürgen

2006-06-01

A 10-year old MueTec2010, white light CD measurement system, installed at DNP Photomask Europe and previously owned by STMicroelectronics, has been upgraded to fulfill the high-end optical CD measurement requirements, and to add the film thickness measurement capability. That is the ultimate upgrade, consisting of two new computers with WINDOWS 2000 operating system, a new 150X measurement objective, a new 16-bit CCD digital camera, a new tube lens for the old Leica Ergoplan microscope, and the NanoStar software with the pattern recognition option. The upgrade yielded an average 45% repeatability improvement for isolated and dense lines and spaces, with 1.2nm average repeatability in a 0.3-10μm CD nominal range. Contact holes report an average 50% repeatability improvement, with 2.5nm average repeatability. The improved precision allows a +/-2-nm CD calibration and correlation down to 0.4μm CD nominal. Overall, the upgraded MueTec2010 shows same or better performance than the already installed Leica LWM250UV CD measurement system, despite the longer illumination wavelength of the former. The improved short and long term repeatability reduced the Gauge RandR figure from 24% to 11% at +/-20nm tolerance, which qualifies the system for high-end binary mask down to 0.5μm CD nominal. The feasibility to calibrate the system for 248nm Molybdenum Silicide Phase Shifting Masks is currently being investigated. In addition to that, the new measurement algorithms, the capability to take multiple measurements within the FOV, and the pattern recognition capability included in the NanoStar software gave a 75% throughput boost to the fully automated macros for the weekly calibration tests of the laser writing tools, compared to the LWM250UV run time. With little additional hardware and software, the system has also been upgraded to include the film thickness measurement capability for the PSM resist coating process (2nd exposure), without the need for a dedicated, more expensive system. Two years ago, this 10-year old MueTec2010 system was about to be deinstalled. Today, thanks to creative thinking at DNP Photomask Europe and to the enthusiastic and cooperative MueTec approach, it is ready for another 10 years of honored service with up-to-date performance and with the additional film thickness measurement capability. This upgrade has by far exceeded the technical and return-on-investment expectations.

Simulation based mask defect repair verification and disposition

NASA Astrophysics Data System (ADS)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple optical model can be used to get simulated aerial image intensity in the AOI. With built-in contour analysis functions, the SMDD software can easily compare the contour (or intensity) differences between defect pattern and normal pattern. With user provided judging criteria, this software can be easily disposition the defect based on contour comparison. In addition, process sensitivity properties, like MEEF and NILS, can be readily obtained in the AOI with a lithography model, which will make mask defect disposition criteria more intelligent.

Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM

NASA Astrophysics Data System (ADS)

Ito, Keisuke; Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hagiwara, Kazuyuki; Hara, Daisuke

2013-06-01

The detection and management of mask defects which are transferred onto wafer becomes more important day by day. As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) with Optical Proximity Correction (OPC). To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to detect. We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630 MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1]. In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing assessment. Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects and can judge whether repairs of defects would be required. Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630 MVM-SEM® and 3D lithography simulation.

Fast releasing oral electrospun PVP/CD nanofiber mats of taste-masked meloxicam.

PubMed

Samprasit, Wipada; Akkaramongkolporn, Prasert; Ngawhirunpat, Tanasait; Rojanarata, Theerasak; Kaomongkolgit, Ruchadaporn; Opanasopit, Praneet

2015-06-20

Fast release and taste masking of meloxicam (MX)-loaded polyvinylpyrrolidone (PVP)/cyclodextrin (CD) nanofiber mats were developed using an electrospinning process. CDs were blended to improve the stability of the mats. The morphology and diameter of the mats were determined using scanning electron microscopy (SEM); physical and mechanical properties were also studied. The MX content, disintegration time, MX release and cytotoxicity of the mats were investigated. In vivo studies were also performed in healthy human volunteers. The results indicated that the mats were successfully prepared with fiber in the nanometer range. MX was well incorporated into the mats, with an amorphous form. The mats showed suitable tensile strength. CDs improved the physical stability by their cage-like supramolecular structure to protect from humidity and moisture, and create bead free nanofiber mats. The nanofiber mats with CDs were physically stable without any hygroscopicity and fusion. A fast disintegration and release of MX was achieved. Moreover, this mat released MX faster than the MX powder and commercial tablets. The cytotoxicity test revealed that mats were safe for a 5-min incubation. The disintegration studies indicated that in vivo disintegration agreed with the in vitro studies; the mat rapidly disintegrated in the mouth. The less bitter of MX was occurred in the mats that incorporated CD, menthol and aspartame. In addition, this mat was physical stable for 6 months. The results suggest that these mats may be a good candidate for fast dissolving drug delivery systems of bitter drugs to increase the palatability of dosage forms. Copyright © 2015 Elsevier B.V. All rights reserved.

VizieR Online Data Catalog: GMOS spectroscopic obs. of SNR candidates in M83 (Winkler+, 2017)

NASA Astrophysics Data System (ADS)

Winkler, P. F.; Blair, W. P.; Long, K. S.

2017-11-01

We used the GMOS on the 8.2m Gemini-South telescope to obtain all the spectra reported here. Most were obtained in a classically scheduled observing run on 2011 April 7-9 (UT); masks 1-7. We later obtained spectra for two additional masks (which we refer to as masks 8 and 9 for simplicity) in a queue-scheduled program (GS-2015A-Q-90) during the 2015A semester. (6 data files).

Writing next-generation display photomasks

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Wahlsten, Mikael; Park, Youngjin

2016-10-01

Recent years have seen a fast technical development within the display area. Displays get ever higher pixel density and the pixels get smaller. Current displays have over 800 PPI and market forces will eventually drive for densities of 2000 PPI or higher. The transistor backplanes also get more complex. OLED displays require 4-7 transistors per pixel instead of the typical 1-2 transistors used for LCDs, and they are significantly more sensitive to errors. New large-area maskwriters have been developed for masks used in high volume production of screens for state-of-theart smartphones. Redesigned laser optics with higher NA and lower aberrations improve resolution and CD uniformity and reduce mura effects. The number of beams has been increased to maintain the throughput despite the higher writing resolution. OLED displays are highly sensitive to placement errors and registration in the writers has been improved. To verify the registration of produced masks a separate metrology system has been developed. The metrology system is self-calibrated to high accuracy. The calibration is repeatable across machines and sites using Z-correction. The repeatability of the coordinate system makes it possible to standardize the coordinate system across an entire supply chain or indeed across the entire industry. In-house metrology is a commercial necessity for high-end mask shop, but also the users of the masks, the panel makers, would benefit from having in-house metrology. It would act as the reference for their mask suppliers, give better predictive and post mortem diagnostic power for the panel process, and the metrology could be used to characterize and improve the entire production loop from data to panel.

Nano-Material and Structural Engineering for Thermal Highways

DTIC Science & Technology

2013-06-14

which are covered with a porous anodized aluminum oxide ( AAO ) membrane that is compatible to most if not all semiconductor electronics chips and has... aluminum oxide ( AAO ) templates as hard masks for fabrication of nanomesh thermoelectric structures. Both USPI’s and KPI’s laboratories have accumulated...T. Bigioni, M. Moskovits, and J. M. Xu, “Electrochemical fabrication of CdS nano-wire arrays in porous anodic aluminum oxide templates”, J. Phys

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2013-04-01

As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

NASA Astrophysics Data System (ADS)

Klostermann, U. K.; Mülders, T.; Schmöller, T.; Lorusso, G. F.; Hendrickx, E.

2010-04-01

In this paper, we discuss the performance of EUV resist models in terms of predictive accuracy, and we assess the readiness of the corresponding model calibration methodology. The study is done on an extensive OPC data set collected at IMEC for the ShinEtsu resist SEVR-59 on the ASML EUV Alpha Demo Tool (ADT), with the data set including more than thousand CD values. We address practical aspects such as the speed of calibration and selection of calibration patterns. The model is calibrated on 12 process window data series varying in pattern width (32, 36, 40 nm), orientation (H, V) and pitch (dense, isolated). The minimum measured feature size at nominal process condition is a 32 nm CD at a dense pitch of 64 nm. Mask metrology is applied to verify and eventually correct nominal width of the drawn CD. Cross-sectional SEM information is included in the calibration to tune the simulated resist loss and sidewall angle. The achieved calibration RMS is ~ 1.0 nm. We show what elements are important to obtain a well calibrated model. We discuss the impact of 3D mask effects on the Bossung tilt. We demonstrate that a correct representation of the flare level during the calibration is important to achieve a high predictability at various flare conditions. Although the model calibration is performed on a limited subset of the measurement data (one dimensional structures only), its accuracy is validated based on a large number of OPC patterns (at nominal dose and focus conditions) not included in the calibration; validation RMS results as small as 1 nm can be reached. Furthermore, we study the model's extendibility to two-dimensional end of line (EOL) structures. Finally, we correlate the experimentally observed fingerprint of the CD uniformity to a model, where EUV tool specific signatures are taken into account.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1D layouts patterned directly will be compared to mask complexity for lines and cuts at nodes larger than 20nm. No such comparison is possible below 20nm since single-patterning does not work below ~80nm pitch using optical exposure tools. Also discussed will be recently published wafer results for line patterns with pitch division by-2 and by-4 at sub-12nm nodes, plus examples of post-etch results for 1D patterns done with cut masks and compared to cuts exposed by a single-column e-beam direct write system.

Comparison of Cloud Detection Using the CERES-MODIS Ed4 and LaRC AVHRR Cloud Masks and CALIPSO Vertical Feature Mask

NASA Astrophysics Data System (ADS)

Trepte, Q. Z.; Minnis, P.; Palikonda, R.; Bedka, K. M.; Sun-Mack, S.

2011-12-01

Accurate detection of cloud amount and distribution using satellite observations is crucial in determining cloud radiative forcing and earth energy budget. The CERES-MODIS (CM) Edition 4 cloud mask is a global cloud detection algorithm for application to Terra and Aqua MODIS data with the aid of other ancillary data sets. It is used operationally for the NASA's Cloud and Earth's Radiant Energy System (CERES) project. The LaRC AVHRR cloud mask, which uses only five spectral channels, is based on a subset of the CM cloud mask which employs twelve MODIS channels. The LaRC mask is applied to AVHRR data for the NOAA Climate Data Record Program. Comparisons among the CM Ed4, and LaRC AVHRR cloud masks and the CALIPSO Vertical Feature Mask (VFM) constitute a powerful means for validating and improving cloud detection globally. They also help us understand the strengths and limitations of the various cloud retrievals which use either active and passive satellite sensors. In this paper, individual comparisons will be presented for different types of clouds over various surfaces, including daytime and nighttime, and polar and non-polar regions. Additionally, the statistics of the global, regional, and zonal cloud occurrence and amount from the CERES Ed4, AVHRR cloud masks and CALIPSO VFM will be discussed.

Sequential CD4-Coreceptor Interactions in Human Immunodeficiency Virus Type 1 Env Function: Soluble CD4 Activates Env for Coreceptor-Dependent Fusion and Reveals Blocking Activities of Antibodies against Cryptic Conserved Epitopes on gp120

PubMed Central

Salzwedel, Karl; Smith, Erica D.; Dey, Barna; Berger, Edward A.

2000-01-01

We devised an experimental system to examine sequential events by which the human immunodeficiency virus type 1 (HIV-1) envelope glycoprotein (Env) interacts with CD4 and coreceptor to induce membrane fusion. Recombinant soluble CD4 (sCD4) activated fusion between effector cells expressing Env and target cells expressing coreceptor (CCR5 or CXCR4) but lacking CD4. sCD4-activated fusion was dose dependent, occurred comparably with two- and four-domain proteins, and demonstrated Env-coreceptor specificities parallel to those reported in conventional fusion and infectivity systems. Fusion activation occurred upon sCD4 preincubation and washing of the Env-expressing effector cells but not the coreceptor-bearing target cells, thereby demonstrating that sCD4 exerts its effects by acting on Env. These findings provide direct functional evidence for a sequential two-step model of Env-receptor interactions, whereby gp120 binds first to CD4 and becomes activated for subsequent functional interaction with coreceptor, leading to membrane fusion. We used the sCD4-activated system to explore neutralization by the anti-gp120 human monoclonal antibodies 17b and 48d. These antibodies reportedly bind conserved CD4-induced epitopes involved in coreceptor interactions but neutralize HIV-1 infection only weakly. We found that 17b and 48d had minimal effects in the standard cell fusion system using target cells expressing both CD4 and coreceptor but potently blocked sCD4-activated fusion with target cells expressing coreceptor alone. Both antibodies strongly inhibited sCD4-activated fusion by Envs from genetically diverse HIV-1 isolates. Thus, the sCD4-activated system reveals conserved Env-blocking epitopes that are masked in native Env and hence not readily detected by conventional systems. PMID:10590121

All-integrated and highly sensitive paper based device with sample treatment platform for Cd2+ immunodetection in drinking/tap waters.

PubMed

López Marzo, Adaris M; Pons, Josefina; Blake, Diane A; Merkoçi, Arben

2013-04-02

Nowadays, the development of systems, devices, or methods that integrate several process steps into one multifunctional step for clinical, environmental, or industrial purposes constitutes a challenge for many ongoing research projects. Here, we present a new integrated paper based cadmium (Cd(2+)) immunosensing system in lateral flow format, which integrates the sample treatment process with the analyte detection process. The principle of Cd(2+) detection is based on competitive reaction between the cadmium-ethylenediaminetetraacetic acid-bovine serum albumin-gold nanoparticles (Cd-EDTA-BSA-AuNP) conjugate deposited on the conjugation pad strip and the Cd-EDTA complex formed in the analysis sample for the same binding sites of the 2A81G5 monoclonal antibody (mAb), specific to Cd-EDTA but not Cd(2+) free, which is immobilized onto the test line. This platform operates without any sample pretreatment step for Cd(2+) detection thanks to an extra conjugation pad that ensures Cd(2+) complexation with EDTA and interference masking through ovalbumin (OVA). The detection and quantification limits found for the device were 0.1 and 0.4 ppb, respectively, these being the lowest limits reported up to now for metal sensors based on paper. The accuracy of the device was evaluated by addition of known quantities of Cd(2+) to different drinking water samples and subsequent Cd(2+) content analysis. Sample recoveries ranged from 95 to 105% and the coefficient of variation for the intermediate precision assay was less than 10%. In addition, the results obtained here were compared with those obtained with the well-established inductively coupled plasma emission spectroscopy (ICPES) and the analysis of certificate standard samples.

Applications of CPL mask technology for sub-65nm gate imaging

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Conley, Will; Wu, Wei; Peters, Richie; Parker, Colita; Cobb, Jonathan; Kasprowicz, Bryan S.; van den Broeke, Doug; Park, J. C.; Karur-Shanmugam, Ramkumar

2005-05-01

The requirements for critical dimension control on gate layer for high performance products are increasingly demanding. Phase shift techniques provide aerial image enhancement, which can translate into improved process window performance and greater critical dimension (CD) control if properly applied. Unfortunately, the application of hard shifter technology to production requires significant effort in layout and optical proximity correction (OPC) application. Chromeless Phase Lithography (CPL) has several advantages over complementary phase mask (c:PSM) such as use of a single mask, and lack of phase placement 'coloring' conflicts and phase imbalance issues. CPL does have implementation issues that must be resolved before it can be used in full-scale production. CPL mask designs can be approached by separating features into three zones based on several parameters, including size relative to the lithographic resolution of the stepper lens, wavelength, and illumination conditions defined. Features are placed into buckets for different treatment zones. Zone 1 features are constructed with 100% transmission phase shifted structures and Zone 3 features are chrome (binary) structures. Features that fall into Zone 2, which are too wide to be defined using the 100% transmission of pure CPL (i.e. have negative mask error factor, MEEF) are the most troublesome and can be approached in several ways. The authors have investigated the application of zebra structures of various sizes to product type layouts. Previous work to investigate CPL using test structures set the groundwork for the more difficult task of applying CPL rules to actual random logic design layouts, which include many zone transitions. Mask making limitations have been identified that play a role in the zebra sizing that can be applied to Zone 2 features. The elimination of Zone 2 regions was also investigated in an effort to simplify the application of CPL and improve manufacturability of reticle through data enhancements.

Alternative method for variable aspect ratio vias using a vortex mask

NASA Astrophysics Data System (ADS)

Schepis, Anthony R.; Levinson, Zac; Burbine, Andrew; Smith, Bruce W.

2014-03-01

Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this range is ultimately dictated by pitch employed.

Stochastic effects in EUV lithography: random, local CD variability, and printing failures

NASA Astrophysics Data System (ADS)

De Bisschop, Peter

2017-10-01

Stochastic effects in lithography are usually quantified through local CD variability metrics, such as line-width roughness or local CD uniformity (LCDU), and these quantities have been measured and studied intensively, both in EUV and optical lithography. Next to the CD-variability, stochastic effects can also give rise to local, random printing failures, such as missing contacts or microbridges in spaces. When these occur, there often is no (reliable) CD to be measured locally, and then such failures cannot be quantified with the usual CD-measuring techniques. We have developed algorithms to detect such stochastic printing failures in regular line/space (L/S) or contact- or dot-arrays from SEM images, leading to a stochastic failure metric that we call NOK (not OK), which we consider a complementary metric to the CD-variability metrics. This paper will show how both types of metrics can be used to experimentally quantify dependencies of stochastic effects to, e.g., CD, pitch, resist, exposure dose, etc. As it is also important to be able to predict upfront (in the OPC verification stage of a production-mask tape-out) whether certain structures in the layout are likely to have a high sensitivity to stochastic effects, we look into the feasibility of constructing simple predictors, for both stochastic CD-variability and printing failure, that can be calibrated for the process and exposure conditions used and integrated into the standard OPC verification flow. Finally, we briefly discuss the options to reduce stochastic variability and failure, considering the entire patterning ecosystem.

Mask Making in Human Services Education: A Case for Student Engagement

ERIC Educational Resources Information Center

Lashewicz, Bonnie; McGrath, Jenny; Smyth, Maria

2014-01-01

This article is an examination of strategies for engaging students in programs of human services education. We describe an in class mask-making activity, used by three human services instructors at an undergraduate university in western Canada, as a means of engaging students to grow in individual and collaborative awareness and skills. We present…

Understanding the critical challenges of self-aligned octuple patterning

NASA Astrophysics Data System (ADS)

Yu, Ji; Xiao, Wei; Kang, Weiling; Chen, Yijian

2014-03-01

In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process characteristics, cost structure, integration challenges, and layout decomposition. The statistical characteristics of SAOP CD variations such as multi-modality are analyzed and contributions from various features to CDU and MTT (mean-to-target) budgets are estimated. The gap space is found to have the worst CDU+MTT performance and is used to determine the required overlay accuracy to ensure a satisfactory edge-placement yield of a cut process. Moreover, we propose a 5-mask positive-tone SAOP (pSAOP) process for memory FEOL patterning and a 3-mask negative-tone SAOP (nSAOP) process for logic BEOL patterning. The potential challenges of 2-D SAOP layout decomposition for BEOL applications are identified. Possible decomposition approaches are explored and the functionality of several developed algorithm is verified using 2-D layout examples from Open Cell Library.

Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

2014-10-01

The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results

NASA Astrophysics Data System (ADS)

Griesinger, Uwe A.; Dettmann, Wolfgang; Hennig, Mario; Heumann, Jan P.; Koehle, Roderick; Ludwig, Ralf; Verbeek, Martin; Zarrabian, Mardjan

2002-07-01

In optical lithography balancing the aerial image of an alternating phase shifting mask (alt. PSM) is a major challenge. For the exposure wavelengths (currently 248nm and 193nm) an optimum etching method is necessary to overcome imbalance effects. Defects play an important role in the imbalances of the aerial image. In this contribution defects will be discussed by using the methodology of global phase imbalance control also for local imbalances which are a result of quartz defects. The effective phase error can be determined with an AIMS-system by measuring the CD width between the images of deep- and shallow trenches at different focus settings. The AIMS results are analyzed in comparison to the simulated and lithographic print results of the alternating structures. For the analysis of local aerial image imbalances it is necessary to investigate the capability of detecting these phase defects with state of the art inspection systems. Alternating PSMs containing programmed defects were inspected with different algorithms to investigate the capture rate of special phase defects in dependence on the defect size. Besides inspection also repair of phase defects is an important task. In this contribution we show the effect of repair on the optical behavior of phase defects. Due to the limited accuracy of the repair tools the repaired area still shows a certain local phase error. This error can be caused either by residual quartz material or a substrate damage. The influence of such repair induced phase errors on the aerial image were investigated.

Multiple beam mask writers: an industry solution to the write time crisis

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.

2010-09-01

The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

Characterization of 193-nm resists for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Fosshaug, Hans; Paulsson, Adisa; Berzinsh, Uldis; Magnusson, Helena

2004-12-01

The push for smaller linewidths and tighter critical dimension (CD) budgets forced manufacturers of optical pattern generators to move from traditional i-line to deep ultraviolet (DUV) resist processing. Entering the DUV area was not without pain. The process conditions, especially exposure times of a few hours, put very tough demands on the resist material itself. However, today 248nm laser writers are fully operating using a resist process that exhibits the requested resolution, CD uniformity and environmental stability. The continuous demands of CD performance made Micronic to investigate suitable resist candidate materials for the next generation optical writer using 193nm excimer laser exposure. This paper reports on resist benchmarking of one commercial as well as several newly developed resists. The resists were investigated using a wafer scanner. The data obtained illustrate the current performance of 193nm photoresists, and further demonstrate that despite good progress in resist formulation optimization, the status is still a bit from the required lithographic performance.

Agreement between Medline searches using the Medline-CD-Rom and Internet Pubmed, BioMedNet, Medscape and Gateway search-engines.

PubMed

Caro-Rojas, Rosa Angela; Eslava-Schmalbach, Javier H

2005-01-01

To compare the information obtained from the Medline database using Internet commercial search engines with that obtained from a compact disc (Medline-CD). An agreement study was carried out based on 101 clinical scenarios provided by specialists in internal medicine, pharmacy, gynaecology-obstetrics, surgery and paediatrics. 175 search strategies were employed using the connector AND plus text within quotation marks. The search was limited to 1991-1999. Internet search-engines were selected by common criteria. Identical search strategies were independently applied to and masked from Internet search engines, as well as the Medline-CD. 3,488 articles were obtained using 129 search strategies. Agreement with the Medline-CD was 54% for PubMed, 57% for Gateway, 54% for Medscape and 65% for BioMedNet. The highest agreement rate for a given speciality (paediatrics) was 78.1% for BioMedNet, having greater -/- than +/+ agreement. Even though free access to Medline has encouraged the boom and growth of evidence-based medicine, these results must be considered within the context of which search engine was selected for doing the searches. The Internet search engines studied showed a poor agreement with the Medline-CD, the rate of agreement differing according to speciality, thus significantly affecting searches and their reproducibility. Software designed for conducting Medline database searches, including the Medline-CD, must be standardised and validated.

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

NASA Astrophysics Data System (ADS)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Near real-time shadow detection and removal in aerial motion imagery application

NASA Astrophysics Data System (ADS)

Silva, Guilherme F.; Carneiro, Grace B.; Doth, Ricardo; Amaral, Leonardo A.; Azevedo, Dario F. G. de

2018-06-01

This work presents a method to automatically detect and remove shadows in urban aerial images and its application in an aerospace remote monitoring system requiring near real-time processing. Our detection method generates shadow masks and is accelerated by GPU programming. To obtain the shadow masks, we converted images from RGB to CIELCh model, calculated a modified Specthem ratio, and applied multilevel thresholding. Morphological operations were used to reduce shadow mask noise. The shadow masks are used in the process of removing shadows from the original images using the illumination ratio of the shadow/non-shadow regions. We obtained shadow detection accuracy of around 93% and shadow removal results comparable to the state-of-the-art while maintaining execution time under real-time constraints.

A Numerically Subdominant CD8 T Cell Response to Matrix Protein of Respiratory Syncytial Virus Controls Infection with Limited Immunopathology

PubMed Central

Liu, Jie; Haddad, Elias K.; Marceau, Joshua; Morabito, Kaitlyn M.; Rao, Srinivas S.; Filali-Mouhim, Ali; Sekaly, Rafick-Pierre; Graham, Barney S.

2016-01-01

CD8 T cells are involved in pathogen clearance and infection-induced pathology in respiratory syncytial virus (RSV) infection. Studying bulk responses masks the contribution of individual CD8 T cell subsets to protective immunity and immunopathology. In particular, the roles of subdominant responses that are potentially beneficial to the host are rarely appreciated when the focus is on magnitude instead of quality of response. Here, by evaluating CD8 T cell responses in CB6F1 hybrid mice, in which multiple epitopes are recognized, we found that a numerically subdominant CD8 T cell response against DbM187 epitope of the virus matrix protein expressed high avidity TCR and enhanced signaling pathways associated with CD8 T cell effector functions. Each DbM187 T effector cell lysed more infected targets on a per cell basis than the numerically dominant KdM282 T cells, and controlled virus replication more efficiently with less pulmonary inflammation and illness than the previously well-characterized KdM282 T cell response. Our data suggest that the clinical outcome of viral infections is determined by the integrated functional properties of a variety of responding CD8 T cells, and that the highest magnitude response may not necessarily be the best in terms of benefit to the host. Understanding how to induce highly efficient and functional T cells would inform strategies for designing vaccines intended to provide T cell-mediated immunity. PMID:26943673

Structural Plasticity and Conformational Transitions of HIV Envelope Glycoprotein gp120

PubMed Central

Korkut, Anil; Hendrickson, Wayne A.

2012-01-01

HIV envelope glycoproteins undergo large-scale conformational changes as they interact with cellular receptors to cause the fusion of viral and cellular membranes that permits viral entry to infect targeted cells. Conformational dynamics in HIV gp120 are also important in masking conserved receptor epitopes from being detected for effective neutralization by the human immune system. Crystal structures of HIV gp120 and its complexes with receptors and antibody fragments provide high-resolution pictures of selected conformational states accessible to gp120. Here we describe systematic computational analyses of HIV gp120 plasticity in such complexes with CD4 binding fragments, CD4 mimetic proteins, and various antibody fragments. We used three computational approaches: an isotropic elastic network analysis of conformational plasticity, a full atomic normal mode analysis, and simulation of conformational transitions with our coarse-grained virtual atom molecular mechanics (VAMM) potential function. We observe collective sub-domain motions about hinge points that coordinate those motions, correlated local fluctuations at the interfacial cavity formed when gp120 binds to CD4, and concerted changes in structural elements that form at the CD4 interface during large-scale conformational transitions to the CD4-bound state from the deformed states of gp120 in certain antibody complexes. PMID:23300605

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

NASA Astrophysics Data System (ADS)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

The application of phase grating to CLM technology for the sub-65nm node optical lithography

NASA Astrophysics Data System (ADS)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

High-resolution CdTe detectors with application to various fields (Conference Presentation)

NASA Astrophysics Data System (ADS)

Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

2016-10-01

High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

64nm pitch metal1 double patterning metrology: CD and OVL control by SEMCD, image based overlay and diffraction based overlay

NASA Astrophysics Data System (ADS)

Ducoté, Julien; Dettoni, Florent; Bouyssou, Régis; Le-Gratiet, Bertrand; Carau, Damien; Dezauzier, Christophe

2015-03-01

Patterning process control of advanced nodes has required major changes over the last few years. Process control needs of critical patterning levels since 28nm technology node is extremely aggressive showing that metrology accuracy/sensitivity must be finely tuned. The introduction of pitch splitting (Litho-Etch-Litho-Etch) at 14FDSOInm node requires the development of specific metrologies to adopt advanced process control (for CD, overlay and focus corrections). The pitch splitting process leads to final line CD uniformities that are a combination of the CD uniformities of the two exposures, while the space CD uniformities are depending on both CD and OVL variability. In this paper, investigations of CD and OVL process control of 64nm minimum pitch at Metal1 level of 14FDSOI technology, within the double patterning process flow (Litho, hard mask etch, line etch) are presented. Various measurements with SEMCD tools (Hitachi), and overlay tools (KT for Image Based Overlay - IBO, and ASML for Diffraction Based Overlay - DBO) are compared. Metrology targets are embedded within a block instanced several times within the field to perform intra-field process variations characterizations. Specific SEMCD targets were designed for independent measurement of both line CD (A and B) and space CD (A to B and B to A) for each exposure within a single measurement during the DP flow. Based on those measurements correlation between overlay determined with SEMCD and with standard overlay tools can be evaluated. Such correlation at different steps through the DP flow is investigated regarding the metrology type. Process correction models are evaluated with respect to the measurement type and the intra-field sampling.

[Face protective patches do not reduce facial pressure ulcers in a simulated model of non-invasive ventilation].

PubMed

Riquelme M, Hugo; Wood V, David; Martínez F, Santiago; Carmona M, Fernando; Peña V, Axel; Wegner A, Adriana

2017-06-01

Noninvasive ventilation (NIV) frequently involves the development of facial pressure ulcers (FPU). Its prevention considers the empirical use of protective patches between skin and mask, in order to reduce the pressure exerted by it. To evaluate the effect of protective patches on the pressure exerted by the facial mask, and its impact on the programmed ventilatory parameters. Bilevel NIV simulated model using full face mask in phantom with a physiological airway (ALS PRO +) in supine position. Forehead, chin and cheekbones pressure were measured using 3 types of standard protective patches versus a control group using pressure sensors (Interlinks Electronics®). The values obtained with the protective patches-mask model were evaluated in the programmed variables maximum inspiratory flow (MIF)), expired tidal volume (Vte) and positive inspiratory pressure (IPAP), with Trilogy 100 ventilator, Respironics®. The programming and recording of the variables was carried out in 8 opportunities in each group by independent operators. There was no decrease in facial pressure with any of the protective patches compared to the control group. Moltopren increased facial pressure at all support points (p < 0.001), increased leakage, it decreased MIF, Vte and IPAP (p < 0.001). Hydrocolloid patches increased facial pressure only in the left cheekbone, increased leakage and decreased MIF. Polyurethane patches did not produce changes in facial pressure or ventilatory variables. The use of protective patches of moltopren, hydrocolloid and polyurethane transparent did not contribute to the decrease of the facial pressure. A deleterious effect of the moltopren and hydrocolloid patches was observed on the administration of ventilatory variables, concluding that the non-use of the protective patches allowed a better administration of the programmed parameters.

[Micro Hadamard transform near-infrared spectrometer].

PubMed

Zhang, Zhi-hai; Muo, Xiang-xia; Guo, Yuan-jun; Wang, Wei

2011-07-01

A new type micro Hadamard transform (HT) near-infrared (NIR) spectrometer is proposed in the present paper. It has a MOEMS (Micro-Opto-Electro-Mechanical Systems) blazed grating HT mask. It has merits of compactness, agility of dynamic mask generation and high scan speed. The structure and theory of this spectrometer are analyzed. The 63-order Hadamard-S matrix and mask are designed. The mask is dynamically generated by program of MOEMS blazed gratings. The spectrum is in agreement with that measured by Shimadzu spectrometer in experiments. It has a wavelength range between 900 and 1 700 nm, spectral resolution of 19 nm, single scan time of 2.4 s, SNR of 44.67:1, optical path of 70 mm x 130 mm, and weight under 1 kg. It can meet the requirement of real time detection and portable application.

Diagnostic Accuracy of Nonmydriatic Fundus Photography for the Detection of Glaucoma in Diabetic Patients.

PubMed

Muñoz-Negrete, Francisco J; Contreras, Inés; Oblanca, Noelia; Pinazo-Durán, M Dolores; Rebolleda, Gema

2015-01-01

To determine the diagnostic accuracy for glaucoma of a set of criteria with nonmydriatic monoscopic fundus photography (NMFP) in diabetics. Diabetics recruited from a screening program for diabetic retinopathy and diabetic glaucoma patients recruited from our glaucoma unit were included. Any patient with evidence of diabetic retinopathy was excluded. Diabetic patients had to have no visual field defects to be included as controls. Glaucoma patients had to have a glaucomatous field defect in at least one eye to be included. One NMFP was taken per eye for all subjects. These photographs were evaluated by two masked glaucoma specialists for the presence of the following: bilateral cup to disc (C/D) ratio ≥ 0.6, notching or thinning of the neuroretinal rim, disc hemorrhages, and asymmetry in the C/D ratio between both eyes ≥ 0.2. This evaluation led to a dichotomous classification: if any of the above criteria was present, the patient was classified as glaucoma. If none were present, the patient was classified as normal. 72 control subjects and 72 glaucoma patients were included. Evaluation of NMFP had a sensitivity of 79.17% and a specificity of 80.56% for specialist 1 and a sensitivity of 72.22% and a specificity of 88.88% for specialist 2 for the detection of glaucoma. The overall accuracy was 79.83% and 80.55%, respectively. NMFP evaluation by a glaucoma specialist may be useful for the detection of glaucoma in diabetics.

Innovative method to suppress local geometry distortions for fabrication of interdigitated electrode arrays with nano gaps

NASA Astrophysics Data System (ADS)

Partel, S.; Urban, G.

2016-03-01

In this paper we present a method to optimize the lithography process for the fabrication of interdigitated electrode arrays (IDA) for a lift-off free electrochemical biosensor. The biosensor is based on amperometric method to allow a signal amplification by redox cycling. We already demonstrated a method to fabricate IDAs with nano gaps with conventional mask aligner lithography and two subsequent deposition processes. By decreasing the distance down to the nanometer range the linewidth variation is becoming the most critical factor and can result in a short circuit of the electrodes. Therefore, the light propagation and the resist pattern of the mask aligner lithography process are simulated to optimize the lithography process. To optimize the outer finger structure assistant features (AsFe) were introduced. The AsFe allow an optimization of the intensity distribution at the electrode fingers. Hence, the periodicity is expanded and the outer structure of the IDA is practically a part of the periodic array. The better CD uniformity can be obtained by adding three assistant features which generate an equal intensity distributions for the complete finger pattern. Considering a mask optimization of the outer structures would also be feasible. However, due to the strong impact of the gap between mask and wafer at contact lithography it is not practicable. The better choice is to create the same intensity distribution for all finger structures. With the introduction of the assistant features large areas with electrode gap sizes in the sub 100 nm region are demonstrated.

Classification and printability of EUV mask defects from SEM images

NASA Astrophysics Data System (ADS)

Cho, Wonil; Price, Daniel; Morgan, Paul A.; Rost, Daniel; Satake, Masaki; Tolani, Vikram L.

2017-10-01

Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overcome before bringing EUV Lithography into high volume manufacturing (HVM). One of the greatest obstacles is manufacturing defect-free masks. For pattern defect inspections in the mask-shop, cutting-edge 193nm optical inspection tools have been used so far due to lacking any e-beam mask inspection (EBMI) or EUV actinic pattern inspection (API) tools. The main issue with current 193nm inspection tools is the limited resolution for mask dimensions targeted for EUV patterning. The theoretical resolution limit for 193nm mask inspection tools is about 60nm HP on masks, which means that main feature sizes on EUV masks will be well beyond the practical resolution of 193nm inspection tools. Nevertheless, 193nm inspection tools with various illumination conditions that maximize defect sensitivity and/or main-pattern modulation are being explored for initial EUV defect detection. Due to the generally low signal-to-noise in the 193nm inspection imaging at EUV patterning dimensions, these inspections often result in hundreds and thousands of defects which then need to be accurately reviewed and dispositioned. Manually reviewing each defect is difficult due to poor resolution. In addition, the lack of a reliable aerial dispositioning system makes it very challenging to disposition for printability. In this paper, we present the use of SEM images of EUV masks for higher resolution review and disposition of defects. In this approach, most of the defects detected by the 193nm inspection tools are first imaged on a mask SEM tool. These images together with the corresponding post-OPC design clips are provided to KLA-Tencor's Reticle Decision Center (RDC) platform which provides ADC (Automated Defect Classification) and S2A (SEM-to-Aerial printability) analysis of every defect. First, a defect-free or reference mask SEM is rendered from the post-OPC design, and the defective signature is detected from the defect-reference difference image. These signatures help assess the true nature of the defect as evident in e-beam imaging; for example, excess or missing absorber, line-edge roughness, contamination, etc. Next, defect and reference contours are extracted from the grayscale SEM images and fed into the simulation engine with an EUV scanner model to generate corresponding EUV defect and reference aerial images. These are then analyzed for printability and dispositioned using an Aerial Image Analyzer (AIA) application to automatically measure and determine the amount of CD errors. Thus by integrating EUV ADC and S2A applications together, every defect detection is characterized for its type and printability which is essential for not only determining which defects to repair, but also in monitoring the performance of EUV mask process tools. The accuracy of the S2A print modeling has been verified with other commercially-available simulators, and will also be verified with actual wafer print results. With EUV lithography progressing towards volume manufacturing at 5nm technology, and the likelihood of EBMI inspectors approaching the horizon, the EUV ADC-S2A system will continue serving an essential role of dispositioning defects off e-beam imaging.

Evaluation of a new photomask CD metrology tool

NASA Astrophysics Data System (ADS)

Dubuque, Leonard F.; Doe, Nicholas G.; St. Cin, Patrick

1996-12-01

In the integrated circuit (IC) photomask industry today, dense IC patterns, sub-micron critical dimensions (CD), and narrow tolerances for 64 M technologies and beyond are driving increased demands to minimize and characterize all components of photomask CD variation. This places strict requirements on photomask CD metrology in order to accurately characterize the mask CD error distribution. According to the gauge-maker's rule, measurement error must not exceed 30% of the tolerance on the product dimension measured or the gauge is not considered capable. The traditional single point repeatability tests are a poor measure of overall measurement system error in a dynamic, leading-edge technology environment. In such an environment, measurements may be taken at different points in the field- of-view due to stage in-accuracy, pattern recognition requirements, and throughput considerations. With this in mind, a set of experiments were designed to characterize thoroughly the metrology tool's repeatability and systematic error. Original experiments provided inconclusive results and had to be extended to obtain a full characterization of the system. Tests demonstrated a performance of better than 15 nm total CD error. Using this test as a tool for further development, the authors were able to determine the effects of various system components and measure the improvement with changes in optics, electronics, and software. Optimization of the optical path, electronics, and system software has yielded a new instrument with a total system error of better than 8 nm. Good collaboration between the photomask manufacturer and the equipment supplier has led to a realistic test of system performance and an improved CD measurement instrument.

Defense Standardization Program Journal, January/March 2013

DTIC Science & Technology

2013-03-01

image plane , representing half the distance across the iris along the horizontal Pupil-to-iris ratio Degree to which the pupil is dilated or constricted... the Poincare indices, ori- entation zone coherences, entropy of local orientations, and core orien- tation field masks Number of deltas Detected deltas...based on the combination of the Poincare indices, ori- entation zone coherences, entropy of local orientations, and delta ori- entation field masks

Trace elemental analysis of school chalk using energy dispersive X-ray florescence spectroscopy (ED-XRF)

NASA Astrophysics Data System (ADS)

Maruthi, Y. A.; Das, N. Lakshmana; Ramprasad, S.; Ram, S. S.; Sudarshan, M.

2015-08-01

The present studies focus the quantitative analysis of elements in school chalk to ensure the safety of its use. The elements like Calcium (Ca), Aluminum (Al), Iron (Fe), Silicon (Si) and Chromium (Cr) were analyzed from settled chalk dust samples collected from five classrooms (CD-1) and also from another set of unused chalk samples collected from local market (CD-2) using Energy Dispersive X-Ray florescence(ED-XRF) spectroscopy. Presence of these elements in significant concentrations in school chalk confirmed that, it is an irritant and occupational hazard. It is suggested to use protective equipments like filtered mask for mouth, nose and chalk holders. This study also suggested using the advanced mode of techniques like Digital boards, marker boards and power point presentations to mitigate the occupational hazard for classroom chalk

Procedural Factors That Affect Psychophysical Measures of Spatial Selectivity in Cochlear Implant Users

PubMed Central

Deeks, John M.; Carlyon, Robert P.

2015-01-01

Behavioral measures of spatial selectivity in cochlear implants are important both for guiding the programing of individual users’ implants and for the evaluation of different stimulation methods. However, the methods used are subject to a number of confounding factors that can contaminate estimates of spatial selectivity. These factors include off-site listening, charge interactions between masker and probe pulses in interleaved masking paradigms, and confusion effects in forward masking. We review the effects of these confounds and discuss methods for minimizing them. We describe one such method in which the level of a 125-pps masker is adjusted so as to mask a 125-pps probe, and where the masker and probe pulses are temporally interleaved. Five experiments describe the method and evaluate the potential roles of the different potential confounding factors. No evidence was obtained for off-site listening of the type observed in acoustic hearing. The choice of the masking paradigm was shown to alter the measured spatial selectivity. For short gaps between masker and probe pulses, both facilitation and refractory mechanisms had an effect on masking; this finding should inform the choice of stimulation rate in interleaved masking experiments. No evidence for confusion effects in forward masking was revealed. It is concluded that the proposed method avoids many potential confounds but that the choice of method should depend on the research question under investigation. PMID:26420785

Vortex via process: analysis and mask fabrication for contact CDs <80 nm

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Tan, Sze M.; Dai, Grace; Morikawa, Yasutaka; Hayashi, Naoya; Ebihara, Takeaki

2003-06-01

In an optical vortex, the wavefront spirals like a corkscrew, rather than forming planes or spheres. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex is always dark. Printed in negative resist at 248nm and NA=0.63, 250nm pitch vortex arrays would produce contact holes with 80nm0.6 can be patterned using a chromeless phase-edge mask composed of rectangles with nominal phases of 0°, 90°, 180° and 270°. Analytic and numerical calculations have been performed to characterize the aerial images projected from such vortex masks using the Kirchhoff-approximation and rigorous EMF methods. Combined with resist simulations, these analyses predict process windows with ~10%Elat and >200nm DOF for 80nm CDs on pitches greater than or equal to 250nm at σ greater than or equal to 0.15. Smaller CDs and pitches are possible with shorter wavelength and larger NA while larger pitches give rise to larger CDs. At pitch >0.8μm, the vortices begin to print independently for σ greater than or equal to 0.3. Such "independent" vortices have a quasi-isofocal dose that gives rise to 100nm contacts with Elat>9% and DOF>500nm at σ=0.3. The extra darkness of the nominal 270° phase step can be accommodated by fine-tuning the etch depth. A reticle fabrication process that achieves the required alignment and vertical wall profiles has been exercised and test masks analyzed. In an actual chip design, unwanted vortices and phase step images would be erased from the resist pattern by exposing the wafer with a second, more conventional trim mask. Vortex via placement is consistent with the coarse-gridded grating design paradigms which would - if widely exercised - lower the cost of the required reticles. Compared to other ways of producing deep sub-wavelength contacts, the vortex via process requires fewer masks and reduces the overlay and process control challenges. A high resolution negative-working resist process is essential, however.

High sensitive gold-nanoparticle based lateral flow Immunodevice for Cd2+ detection in drinking waters.

PubMed

López Marzo, Adaris M; Pons, Josefina; Blake, Diane A; Merkoçi, Arben

2013-09-15

In this work for first time a lateral flow immunosensor device (LFID) for Cd(2+) determination in drinking and tap waters using the Cd-EDTA-BSA-AuNP conjugate as signal producer tool is introduced. The principle of working is based on competitive reaction between the Cd-EDTA-BSA-AuNP conjugate deposited on the conjugation pad strip and the Cd-EDTA complex formed in the analysis sample for the same binding sites of the 2A81G5 monoclonal antibody, specific to Cd-EDTA but not Cd(2+) free, which is immobilized onto the test line. The device has a large response range within 0.4-2000ppb, being the linear response between 0.4 and 10ppb. The quantification and detection limits of 0.4 and 0.1ppb, respectively, represent the lowest ones reported so far for paper based metal sensors. The obtained detection limit is 50 times lower than the maximum contamination level required for drinking water. Here we also show a new option for increasing the sensibility in the LFDs with competitive format, through the decreasing in concentrations of the Cd-EDTA-BSA-AuNP conjugate deposited in the conjugation strip and the mAbs deposited in the test and control zones until to reach optimized concentrations. It is an important result take into account that the increase in sensibility is one of the challenges in the field of LFD sensors, where are focused many of the ongoing researches. In addition, a specificity study of the device for several metal interferences, where potential metal interferences are masked with the use of the EDTA and OVA optimized concentrations, is presented too. Copyright © 2013 Elsevier B.V. All rights reserved.

Differences in Cd and Zn bioaccumulation for the flood-tolerant Salix cinerea rooting in seasonally flooded contaminated sediments.

PubMed

Vandecasteele, Bart; Laing, Gijs Du; Quataert, Paul; Tack, Filip M G

2005-04-01

Several authors suggest that a hydrological regime aiming at wetland creation is a potential management option that favours reducing bioavailability for metal-contaminated sites. The hydrological conditions on a site constitute one of the many factors that may affect the availability of potentially toxic trace metals for uptake by plants. Bioavailability of Cd, Mn and Zn on a contaminated dredged sediment landfill (DSL) with variable duration of submersion was evaluated by measuring metal concentrations in the wetland plant species Salix cinerea in field conditions. Longer submersion periods in the field caused lower Cd and Zn concentrations in the leaves in the first weeks of the growing season. Foliar Cd and Zn concentrations at the end of the growing season were highest on the initially flooded plot that emerged early in the growing season. Foliar Zn concentrations were also high at a sandy-textured oxic plot with low soil metal concentrations. Zn uptake in the leaves was markedly slower than Cd uptake for trees growing on soils with prolonged waterlogging during the growing season, pointing at a different availability. Zn availability was lowest when soil was submerged, but metal transfer from stems and twigs to leaves may mask the lower availability of Cd in submerged soils. Especially for Cd, a transfer effect from one growing season to the next season was observed: oxic conditions at the end of the previous growing season seem to determine at least partly the foliar concentrations for S. cinerea through this metal transfer mechanism. Duration of the submersion period is a key factor for bioavailability inasmuch as initially submerged soils emerging only in the second half of the growing season resulted in elevated Cd and Zn foliar concentrations at that time.

MAGIC: a European program to push the insertion of maskless lithography

NASA Astrophysics Data System (ADS)

Pain, L.; Icard, B.; Tedesco, S.; Kampherbeek, B.; Gross, G.; Klein, C.; Loeschner, H.; Platzgummer, E.; Morgan, R.; Manakli, S.; Kretz, J.; Holhe, C.; Choi, K.-H.; Thrum, F.; Kassel, E.; Pilz, W.; Keil, K.; Butschke, J.; Irmscher, M.; Letzkus, F.; Hudek, P.; Paraskevopoulos, A.; Ramm, P.; Weber, J.

2008-03-01

With the willingness of the semiconductor industry to push manufacturing costs down, the mask less lithography solution represents a promising option to deal with the cost and complexity concerns about the optical lithography solution. Though a real interest, the development of multi beam tools still remains in laboratory environment. In the frame of the seventh European Framework Program (FP7), a new project, MAGIC, started January 1st 2008 with the objective to strengthen the development of the mask less technology. The aim of the program is to develop multi beam systems from MAPPER and IMS nanofabrication technologies and the associated infrastructure for the future tool usage. This paper draws the present status of multi beam lithography and details the content and the objectives of the MAGIC project.

Development of a data management front end for use with a LANDSAT based information system. [assessing gypsy moth defoliation damage in Pennsylvania

NASA Technical Reports Server (NTRS)

Turner, B. J. (Principal Investigator)

1982-01-01

A user friendly front end was constructed to facilitate access to the LANDSAT mosaic data base supplied by JPL and to process both LANDSAT and ancillary data. Archieval and retrieval techniques were developed to efficiently handle this data base and make it compatible with requirements of the Pennsylvania Bureau of Forestry. Procedures are ready for: (1) forming the forest/nonforest mask in ORSER compressed map format using GSFC-supplied classification procedures; (2) registering data from a new scene (defoliated) to the mask (which may involve mosaicking if the area encompasses two LANDSAT scenes; (3) producing a masked new data set using the MASK program; (4) analyzing this data set to produce a map showing degrees of defoliation, output on the Versatec plotter; and (5) producing color composite maps by a diazo-type process.

MANN: A program to transfer designs for diffractive optical elements to a MANN photolithographic mask generator

NASA Technical Reports Server (NTRS)

Matthys, Donald R.

1994-01-01

There are two basic areas of interest for diffractive optics. In the first, the property of wavefront division is exploited for achieving optical fanout, analogous to the more familiar electrical fanout of electronic circuitry. The basic problem here is that when using a simple uniform diffraction grating the energy input is divided unevenly among the output beams. The other area of interest is the use of diffractive elements to replace or supplement standard refractive elements such as lenses. Again, local grating variations can be used to control the amount of bending imparted to optical rays, and the efficiency of the diffractive element will depend on how closely the element can be matched to the design requirements. In general, production restrictions limit how closely the element approaches the design, and for the common case of photolithographic production, a series of binary masks is required to achieve high efficiency. The actual design process is much more involved than in the case of elements for optical fanout, as the desired phase of the optical wavefront over some reference plane must be specified and the phase alteration to be introduced at each point by the diffraction element must be known. This generally requires the utilization of a standard optical design program. Two approaches are possible. In the first approach, the diffractive element is treated as a special type of lens and the ordinary optical design equations are used. Optical design programs tend to follow a second approach, namely, using the equations of optical interference derived from holographic theory and then allowing the introduction of phase front corrections in the form of polynomial equations. By using either of these two methods, diffractive elements can be used not only to compensate for distortions such as chromatic or spherical aberration, but also to perform the work of a variety of other optical elements such as null correctors, beam shapers, etc. The main focus of the project described in this report is how the design information from the lens design program is incorporated into the photolithographic process. It is shown that the MANN program, a photolithographic mask generator, fills the need for a link between lens design programs and mask generation controllers.The generated masks can be used to expose a resist-coated substrate which is etched and then must be re-coated, re-exposed, and re-etched for making copies, just as in the electronics industry.

ILP-based co-optimization of cut mask layout, dummy fill, and timing for sub-14nm BEOL technology

NASA Astrophysics Data System (ADS)

Han, Kwangsoo; Kahng, Andrew B.; Lee, Hyein; Wang, Lutong

2015-10-01

Self-aligned multiple patterning (SAMP), due to its low overlay error, has emerged as the leading option for 1D gridded back-end-of-line (BEOL) in sub-14nm nodes. To form actual routing patterns from a uniform "sea of wires", a cut mask is needed for line-end cutting or realization of space between routing segments. Constraints on cut shapes and minimum cut spacing result in end-of-line (EOL) extensions and non-functional (i.e. dummy fill) patterns; the resulting capacitance and timing changes must be consistent with signoff performance analyses and their impacts should be minimized. In this work, we address the co-optimization of cut mask layout, dummy fill, and design timing for sub-14nm BEOL design. Our central contribution is an optimizer based on integer linear programming (ILP) to minimize the timing impact due to EOL extensions, considering (i) minimum cut spacing arising in sub-14nm nodes; (ii) cut assignment to different cut masks (color assignment); and (iii) the eligibility to merge two unit-size cuts into a bigger cut. We also propose a heuristic approach to remove dummy fills after the ILP-based optimization by extending the usage of cut masks. Our heuristic can improve critical path performance under minimum metal density and mask density constraints. In our experiments, we study the impact of number of cut masks, minimum cut spacing and metal density under various constraints. Our studies of optimized cut mask solutions in these varying contexts give new insight into the tradeoff of performance and cost that is afforded by cut mask patterning technology options.

Scalable Failure Masking for Stencil Computations using Ghost Region Expansion and Cell to Rank Remapping

DOE PAGES

Gamell, Marc; Teranishi, Keita; Kolla, Hemanth; ...

2017-10-26

In order to achieve exascale systems, application resilience needs to be addressed. Some programming models, such as task-DAG (directed acyclic graphs) architectures, currently embed resilience features whereas traditional SPMD (single program, multiple data) and message-passing models do not. Since a large part of the community's code base follows the latter models, it is still required to take advantage of application characteristics to minimize the overheads of fault tolerance. To that end, this paper explores how recovering from hard process/node failures in a local manner is a natural approach for certain applications to obtain resilience at lower costs in faulty environments.more » In particular, this paper targets enabling online, semitransparent local recovery for stencil computations on current leadership-class systems as well as presents programming support and scalable runtime mechanisms. Also described and demonstrated in this paper is the effect of failure masking, which allows the effective reduction of impact on total time to solution due to multiple failures. Furthermore, we discuss, implement, and evaluate ghost region expansion and cell-to-rank remapping to increase the probability of failure masking. To conclude, this paper shows the integration of all aforementioned mechanisms with the S3D combustion simulation through an experimental demonstration (using the Titan system) of the ability to tolerate high failure rates (i.e., node failures every five seconds) with low overhead while sustaining performance at large scales. In addition, this demonstration also displays the failure masking probability increase resulting from the combination of both ghost region expansion and cell-to-rank remapping.« less

Scalable Failure Masking for Stencil Computations using Ghost Region Expansion and Cell to Rank Remapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gamell, Marc; Teranishi, Keita; Kolla, Hemanth

In order to achieve exascale systems, application resilience needs to be addressed. Some programming models, such as task-DAG (directed acyclic graphs) architectures, currently embed resilience features whereas traditional SPMD (single program, multiple data) and message-passing models do not. Since a large part of the community's code base follows the latter models, it is still required to take advantage of application characteristics to minimize the overheads of fault tolerance. To that end, this paper explores how recovering from hard process/node failures in a local manner is a natural approach for certain applications to obtain resilience at lower costs in faulty environments.more » In particular, this paper targets enabling online, semitransparent local recovery for stencil computations on current leadership-class systems as well as presents programming support and scalable runtime mechanisms. Also described and demonstrated in this paper is the effect of failure masking, which allows the effective reduction of impact on total time to solution due to multiple failures. Furthermore, we discuss, implement, and evaluate ghost region expansion and cell-to-rank remapping to increase the probability of failure masking. To conclude, this paper shows the integration of all aforementioned mechanisms with the S3D combustion simulation through an experimental demonstration (using the Titan system) of the ability to tolerate high failure rates (i.e., node failures every five seconds) with low overhead while sustaining performance at large scales. In addition, this demonstration also displays the failure masking probability increase resulting from the combination of both ghost region expansion and cell-to-rank remapping.« less

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

ELECTRIC PULSE GENERATOR

DOEpatents

Buntenbach, R.W.

1959-06-01

S>An electro-optical apparatus is described which produces electric pulses in programmed sequences at times and durations controlled with great accuracy. An oscilloscope CRT is supplied with signals to produce a luminous spot moving in a circle. An opaque mask with slots of variable width transmits light from the spot to a photoelectric transducer. For shorter pulse decay times a CRT screen which emits UV can be used with a UVtransmitting filter and a UV- sensitive photoelectric cell. Pulses are varied by changing masks or by using masks with variable slots. This device may be used in multiple arrangements to produce other pulse aT rangements, or it can be used to trigger an electronic pulse generator. (T.R.H.)

A quality management systems approach for CD4 testing in resource-poor settings.

PubMed

Westerman, Larry E; Kohatsu, Luciana; Ortiz, Astrid; McClain, Bernice; Kaplan, Jonathan; Spira, Thomas; Marston, Barbara; Jani, Ilesh V; Nkengasong, John; Parsons, Linda M

2010-10-01

Quality assurance (QA) is a systematic process to monitor and improve clinical laboratory practices. The fundamental components of a laboratory QA program include providing a functional and safe laboratory environment, trained and competent personnel, maintained equipment, adequate supplies and reagents, testing of appropriate specimens, internal monitoring of quality, accurate reporting, and external quality assessments. These components are necessary to provide accurate and precise CD4 T-cell counts, an essential test to evaluate start of and monitor effectiveness of antiretroviral therapy for HIV-infected patients. In recent years, CD4 testing has expanded dramatically in resource-limited settings. Information on a CD4 QA program as described in this article will provide guidelines not only for clinical laboratory staff but also for managers of programs responsible for supporting CD4 testing. All agencies involved in implementing CD4 testing must understand the needs of the laboratory and provide advocacy, guidance, and financial support to established CD4 testing sites and programs. This article describes and explains the procedures that must be put in place to provide reliable CD4 determinations in a variety of settings.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, T; Cho, M; Kang, S

Purpose: To improve the setup accuracy of thermoplastic mask, we developed a new monitoring method based on force sensing technology and evaluated its feasibility. Methods: The thermoplastic mask setup monitoring system consists of a force sensing resistor sensor unit, a signal transport device, a control PC and an in-house software. The system is designed to monitor pressure variation between the mask and patient in real time. It also provides a warning to the user when there is a possibility of movement. A preliminary study was performed to evaluate the reliability of the sensor unit and developed monitoring system with amore » head phantom. Then, a simulation study with volunteers was conducted to evaluate the feasibility of the monitoring system. Note that the sensor unit can have multiple end-sensors and every end-sensor was confirmed to be within 2% reliability in pressure reading through a screening test. Results: To evaluate the reproducibility of the proposed monitoring system in practice, we simulated a mask setup with the head phantom. FRS sensors were attached on the face of the head phantom and pressure was monitored. For 3 repeated mask setups on the phantom, the variation of the pressure was less than 3% (only 1% larger than 2% potential uncertainty confirmed in the screening test). In the volunteer study, we intended to verify that the system could detect patient movements within the mask. Thus, volunteers were asked to turn their head or lift their chin. The system was able to detect movements effectively, confirming the clinical feasibility of the monitoring system developed. Conclusion: Through the proposed setup monitoring method, it is possible to monitor patient motion inside a mask in real time, which has never been possible with most commonly used systems using non-radiographic technology such as infrared camera system and surface imaging system. This work was supported by the Radiation Technology R&D program (No. 2013M2A2A7043498) and the Mid-career Researcher Program (2014R1A2A1A10050270) through the National Research Foundation of Korea funded by the Ministry of Science, ICT&Future Planning.« less

Investigation of the applicability of a functional programming model to fault-tolerant parallel processing for knowledge-based systems

NASA Technical Reports Server (NTRS)

Harper, Richard

1989-01-01

In a fault-tolerant parallel computer, a functional programming model can facilitate distributed checkpointing, error recovery, load balancing, and graceful degradation. Such a model has been implemented on the Draper Fault-Tolerant Parallel Processor (FTPP). When used in conjunction with the FTPP's fault detection and masking capabilities, this implementation results in a graceful degradation of system performance after faults. Three graceful degradation algorithms have been implemented and are presented. A user interface has been implemented which requires minimal cognitive overhead by the application programmer, masking such complexities as the system's redundancy, distributed nature, variable complement of processing resources, load balancing, fault occurrence and recovery. This user interface is described and its use demonstrated. The applicability of the functional programming style to the Activation Framework, a paradigm for intelligent systems, is then briefly described.

HIV-1 Tat affects the programming and functionality of human CD8⁺ T cells by modulating the expression of T-box transcription factors.

PubMed

Sforza, Fabio; Nicoli, Francesco; Gallerani, Eleonora; Finessi, Valentina; Reali, Eva; Cafaro, Aurelio; Caputo, Antonella; Ensoli, Barbara; Gavioli, Riccardo

2014-07-31

HIV infection is characterized by several immune dysfunctions of both CD8⁺ and CD4⁺ T cells as hyperactivation, impairment of functionality and expansion of memory T cells. CD8⁺ T-cell dysfunctions have been associated with increased expression of T-bet, Eomesdermin and pro-inflammatory cytokines, and with down-regulation of CD127. The HIV-1 trans-activator of transcription (Tat) protein, which is released by infected cells and detected in tissues of HIV-positive individuals, is known to contribute to the dysregulation of CD4⁺ T cells; however, its effects on CD8⁺ T cells have not been investigated. Thus, in this study, we sought to address whether Tat may affect CD8⁺ T-cell functionality and programming. CD8⁺ T cells were activated by T-cell receptor engagement in the presence or absence of Tat. Cytokine production, killing capacity, surface phenotype and expression of transcription factors important for T-cell programming were evaluated. Tat favors the secretion of interleukin-2, interferon-γ and granzyme B in CD8⁺ T cells. Behind this functional modulation we observed that Tat increases the expression of T-bet, Eomesdermin, Blimp-1, Bcl-6 and Bcl-2 in activated but not in unstimulated CD8⁺ T lymphocytes. This effect is associated with the down-regulation of CD127 and the up-regulation of CD27. Tat deeply alters the programming and functionality of CD8⁺ T lymphocytes.

Core/shell colloidal quantum dot exciplex states for the development of highly efficient quantum-dot-sensitized solar cells.

PubMed

Wang, Jin; Mora-Seró, Iván; Pan, Zhenxiao; Zhao, Ke; Zhang, Hua; Feng, Yaoyu; Yang, Guang; Zhong, Xinhua; Bisquert, Juan

2013-10-23

Searching suitable panchromatic QD sensitizers for expanding the light-harvesting range, accelerating charge separation, and retarding charge recombination is an effective way to improve power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSCs). One possible way to obtain a wide absorption range is to use the exciplex state of a type-II core/shell-structured QDs. In addition, this system could also provide a fast charge separation and low charge-recombination rate. Herein, we report on using a CdTe/CdSe type-II core/shell QD sensitizer with an absorption range extending into the infrared region because of its exciplex state, which is covalently linked to TiO2 mesoporous electrodes by dropping a bifunctional linker molecule mercaptopropionic acid (MPA)-capped QD aqueous solution onto the film electrode. High loading and a uniform distribution of QD sensitizer throughout the film electrode thickness have been confirmed by energy dispersive X-ray (EDX) elemental mapping. The accelerated electron injection and retarded charge-recombination pathway in the built CdTe/CdSe QD cells in comparison with reference CdSe QD-based cells have been confirmed by impedance spectroscopy, fluorescence decay, and intensity-modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS) analysis. With the combination of the high QD loading and intrinsically superior optoelectronic properties of type-II core/shell QD (wide absorption range, fast charge separation, and slow charge recombination), the resulting CdTe/CdSe QD-based regenerative sandwich solar cells exhibit a record PCE of 6.76% (J(sc) = 19.59 mA cm(-2), V(oc) = 0.606 V, and FF = 0.569) with a mask around the active film under a full 1 sun illumination (simulated AM 1.5), which is the highest reported to date for liquid-junction QDSCs.

Studies of mist deposition for the formation of quantum dot CdSe films

NASA Astrophysics Data System (ADS)

Price, S. C.; Shanmugasundaram, K.; Ramani, S.; Zhu, T.; Zhang, F.; Xu, J.; Mohney, S. E.; Zhang, Q.; Kshirsagar, A.; Ruzyllo, J.

2009-10-01

Films of CdSe(ZnS) colloidal nanocrystalline quantum dots (NQDs) were deposited on bare silicon, glass and polymer coated silicon using mist deposition. This effort is a part of an exploratory investigation in which this deposition technique is studied for the first time as a method to form semiconductor NQD films. The process parameters, including deposition time, solution concentration and electric field, were varied to change the thickness of the deposited film. Blanket films and films deposited through a shadow mask were created to investigate the method's ability to pattern films during the deposition process. The differences between these deposition modes in terms of film morphology were observed. Overall, the results show that mist deposition of quantum dots is a viable method for creating thin, patterned quantum dot films using colloidal solution as the precursor. It is concluded that this technique shows very good promise for quantum dot (light emitting diode, LED) fabrication.

Trace elemental analysis of school chalk using energy dispersive X-ray florescence spectroscopy (ED-XRF)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maruthi, Y. A., E-mail: ymjournal2014@gmail.com; Das, N. Lakshmana, E-mail: nldas9@gmail.com; Ramprasad, S., E-mail: ramprasadsurakala@gmail.com

The present studies focus the quantitative analysis of elements in school chalk to ensure the safety of its use. The elements like Calcium (Ca), Aluminum (Al), Iron (Fe), Silicon (Si) and Chromium (Cr) were analyzed from settled chalk dust samples collected from five classrooms (CD-1) and also from another set of unused chalk samples collected from local market (CD-2) using Energy Dispersive X-Ray florescence(ED-XRF) spectroscopy. Presence of these elements in significant concentrations in school chalk confirmed that, it is an irritant and occupational hazard. It is suggested to use protective equipments like filtered mask for mouth, nose and chalk holders.more » This study also suggested using the advanced mode of techniques like Digital boards, marker boards and power point presentations to mitigate the occupational hazard for classroom chalk.« less

Investigation of hyper-NA scanner emulation for photomask CDU performance

NASA Astrophysics Data System (ADS)

Poortinga, Eric; Scheruebl, Thomas; Conley, Will; Sundermann, Frank

2007-02-01

As the semiconductor industry moves toward immersion lithography using numerical apertures above 1.0 the quality of the photomask becomes even more crucial. Photomask specifications are driven by the critical dimension (CD) metrology within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately, tolerances of device electrical properties drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process, and photomask quality. Tightening of photomask specifications is one mechanism for meeting the wafer CD targets. The challenge lies in determining how photomask level metrology results influence wafer level imaging performance. Can it be inferred that photomask level CD performance is the direct contributor to wafer level CD performance? With respect to phase shift masks, criteria such as phase and transmission control are generally tightened with each technology node. Are there other photomask relevant influences that effect wafer CD performance? A comprehensive study is presented supporting the use of scanner emulation based photomask CD metrology to predict wafer level within chip CD uniformity (CDU). Using scanner emulation with the photomask can provide more accurate wafer level prediction because it inherently includes all contributors to image formation related to the 3D topography such as the physical CD, phase, transmission, sidewall angle, surface roughness, and other material properties. Emulated images from different photomask types were captured to provide CD values across chip. Emulated scanner image measurements were completed using an AIMS TM45-193i with its hyper-NA, through-pellicle data acquisition capability including the Global CDU Map TM software option for AIMS TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CDU data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using scanner emulation based photomask CD metrology.

Actinic inspection of EUV reticles with arbitrary pattern design

NASA Astrophysics Data System (ADS)

Mochi, Iacopo; Helfenstein, Patrick; Rajeev, Rajendran; Fernandez, Sara; Kazazis, Dimitrios; Yoshitake, Shusuke; Ekinci, Yasin

2017-10-01

The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.

DJANAL user's manual

NASA Technical Reports Server (NTRS)

Pitts, E. R.

1976-01-01

The DJANAL (DisJunct ANALyzer) Program provides a means for the LSI designer to format output from the Mask Analysis Program (MAP) for input to the FETLOG (FETSIM/LOGSIM) processor. This document presents a brief description of the operation of DJANAL and provides comprehensive instruction for its use.

X-37 CD Rom (Mini Business Card Version)

NASA Technical Reports Server (NTRS)

Stewart, Scotty

2000-01-01

The mini X-37 CD was developed as an educational tool for the public and commercial industry about the X-37 pathfinder vehicle program. This CD contains overview information about the X-37 program along with general vehicle system and technology description information.

HP-41CX Programs for HgCdTe Detectors and IR Systems.

DTIC Science & Technology

1987-10-01

FIELD GROUP SUB-GROUP IPocket Computer HgCdTe PhotoSensor Programs Detectors Analysis I I l-IP-41 Infrared IR Systems __________ 19 ABSTRACT (Continue... HgCdTe detectors , focal planes, and infrared systems. They have been written to run in a basic HP-41CV or HP-41CX with no card reader or additional ROMs...Programs have been written for the HP-41CX which aid in the analysis of HgCdTe detectors , focal r planes, and infrared systems. They have been installed as a

A Chitin-Like Component on Sclerotic Cells of Fonsecaea pedrosoi Inhibits Dectin-1-Mediated Murine Th17 Development by Masking β-Glucans

PubMed Central

Li, Ruoyu; Chen, Sharon C.-A.; Liu, Weihuang; Liu, Wei; Chen, Liuqing; Chen, Yao; Zhang, Xu; Tong, Zhongsheng; Xia, Yun; Xia, Ping; Wang, Yan; Duan, Yiqun

2014-01-01

Fonsecaea pedrosoi (F. pedrosoi), a major agent of chromoblastomycosis, has been shown to be recognized primarily by C-type lectin receptors (CLRs) in a murine model of chromoblastomycosis. Specifically, the β-glucan receptor, Dectin-1, mediates Th17 development and consequent recruitment of neutrophils, and is evidenced to have the capacity to bind to saprophytic hyphae of F. pedrosoi in vitro. However, when embedded in tissue, most etiological agents of chromoblastomycosis including F. pedrosoi will transform into the sclerotic cells, which are linked to the greatest survival of melanized fungi in tissue. In this study, using immunocompetent and athymic (nu/nu) murine models infected subcutaneously or intraperitoneally with F. pedrosoi, we demonstrated that T lymphocytes play an active role in the resolution of localized footpad infection, and there existed a significantly decreased expression of Th17-defining transcription factor Rorγt and inefficient recruitment of neutrophils in chronically infected spleen where the inoculated mycelium of F. pedrosoi transformed into the sclerotic cells. We also found that Dectin-1-expressing histocytes and neutrophils participated in the enclosure of transformed sclerotic cells in the infectious foci. Furthermore, we induced the formation of sclerotic cells in vitro, and evidenced a significantly decreased binding capacity of human or murine-derived Dectin-1 to the induced sclerotic cells in comparison with the saprophytic mycelial forms. Our analysis of β-glucans-masking components revealed that it is a chitin-like component, but not the mannose moiety on the sclerotic cells, that interferes with the binding of β-glucans by human or murine Dectin-1. Notably, we demonstrated that although Dectin-1 contributed to the development of IL-17A-producing CD3+CD4+ murine splenocytes upon in vitro-stimulation by saprophytic F. pedrosoi, the masking effect of chitin components partly inhibited Dectin-1-mediated Th17 development upon in vitro-stimulation by induced sclerotic cells. Therefore, these findings extend our understanding of the chronicity of chromoblastomycosis. PMID:25490199

CD134/CD137 Dual Costimulation-Elicited IFN-γ Maximizes Effector T Cell Function but Limits Treg Expansion

PubMed Central

Rose, Marie-Clare St.; Taylor, Roslyn A.; Bandyopadhyay, Suman; Qui, Harry Z.; Hagymasi, Adam T.; Vella, Anthony T.; Adler, Adam J.

2012-01-01

T cell tolerance to tumor antigens represents a major hurdle in generating tumor immunity. Combined administration of agonistic monoclonal antibodies to the costimulatory receptors CD134 plus CD137 can program T cells responding to tolerogenic antigen to undergo expansion and effector T cell differentiation, and also elicits tumor immunity. Nevertheless, CD134 and CD137 agonists can also engage inhibitory immune components. To understand how immune stimulatory versus inhibitory components are regulated during CD134 plus CD137 dual costimulation, the current study utilized a model where dual costimulation programs T cells encountering a highly tolerogenic self-antigen to undergo effector differentiation. IFN-γ was found to play a pivotal role in maximizing the function of effector T cells while simultaneously limiting the expansion of CD4+CD25+Foxp3+ Tregs. In antigen-responding effector T cells, IFN-γ operates via a direct cell-intrinsic mechanism to cooperate with IL-2 to program maximal expression of granzyme B. Simultaneously, IFN-γ limits expression of the IL-2 receptor alpha chain (CD25) and IL-2 signaling through a mechanism that does not involve T-bet-mediated repression of IL-2. IFN-γ also limited CD25 and Foxp3 expression on bystanding CD4+Foxp3+ Tregs, and limited the potential of these Tregs to expand. These effects could not be explained by the ability of IFN-γ to limit IL-2 availability. Taken together, during dual costimulation IFN-γ interacts with IL-2 through distinct mechanisms to program maximal expression of effector molecules in antigen-responding T cells while simultaneously limiting Treg expansion. PMID:23295363

Primer3_masker: integrating masking of template sequence with primer design software.

PubMed

Kõressaar, Triinu; Lepamets, Maarja; Kaplinski, Lauris; Raime, Kairi; Andreson, Reidar; Remm, Maido

2018-06-01

Designing PCR primers for amplifying regions of eukaryotic genomes is a complicated task because the genomes contain a large number of repeat sequences and other regions unsuitable for amplification by PCR. We have developed a novel k-mer based masking method that uses a statistical model to detect and mask failure-prone regions on the DNA template prior to primer design. We implemented the software as a standalone software primer3_masker and integrated it into the primer design program Primer3. The standalone version of primer3_masker is implemented in C. The source code is freely available at https://github.com/bioinfo-ut/primer3_masker/ (standalone version for Linux and macOS) and at https://github.com/primer3-org/primer3/ (integrated version). Primer3 web application that allows masking sequences of 196 animal and plant genomes is available at http://primer3.ut.ee/. maido.remm@ut.ee. Supplementary data are available at Bioinformatics online.

The impact of 14-nm photomask uncertainties on computational lithography solutions

NASA Astrophysics Data System (ADS)

Sturtevant, John; Tejnil, Edita; Lin, Tim; Schultze, Steffen; Buck, Peter; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-04-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Layout optimization of DRAM cells using rigorous simulation model for NTD

NASA Astrophysics Data System (ADS)

Jeon, Jinhyuck; Kim, Shinyoung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Kuechler, Bernd; Zimmermann, Rainer; Muelders, Thomas; Klostermann, Ulrich; Schmoeller, Thomas; Do, Mun-hoe; Choi, Jung-Hoe

2014-03-01

DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a "super stable" core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by scanning electron microscope (SEM) measurements. High resist impact and difficult model data acquisition demand for a simulation model that hat is capable of extrapolating reliably beyond its calibration dataset. We use rigorous simulation models to provide that predictive performance. We have discussed the need of a rigorous mask optimization process for DRAM contact cell layout yielding mask layouts that are optimal in process performance, mask manufacturability and accuracy. In this paper, we have shown the step by step process from analytical illumination source derivation, a NTD and application tailored model calibration to layout optimization such as OPC and SRAF placement. Finally the work has been verified with simulation and experimental results on wafer.

Evidence for a stepwise program of extrathymic T cell development within the human tonsil

PubMed Central

McClory, Susan; Hughes, Tiffany; Freud, Aharon G.; Briercheck, Edward L.; Martin, Chelsea; Trimboli, Anthony J.; Yu, Jianhua; Zhang, Xiaoli; Leone, Gustavo; Nuovo, Gerard; Caligiuri, Michael A.

2012-01-01

The development of a broad repertoire of T cells, which is essential for effective immune function, occurs in the thymus. Although some data suggest that T cell development can occur extrathymically, many researchers remain skeptical that extrathymic T cell development has an important role in generating the T cell repertoire in healthy individuals. However, it may be important in the setting of poor thymic function or congenital deficit and in the context of autoimmunity, cancer, or regenerative medicine. Here, we report evidence that a stepwise program of T cell development occurs within the human tonsil. We identified 5 tonsillar T cell developmental intermediates: (a) CD34+CD38dimLin– cells, which resemble multipotent progenitors in the bone marrow and thymus; (b) more mature CD34+CD38brightLin– cells; (c) CD34+CD1a+CD11c– cells, which resemble committed T cell lineage precursors in the thymus; (d) CD34–CD1a+CD3–CD11c– cells, which resemble CD4+CD8+ double-positive T cells in the thymus; and (e) CD34–CD1a+CD3+CD11c– cells. The phenotype of each subset closely resembled that of its thymic counterpart. The last 4 populations expressed RAG1 and PTCRA, genes required for TCR rearrangement, and all 5 subsets were capable of ex vivo T cell differentiation. TdT+ cells found within the tonsillar fibrous scaffold expressed CD34 and/or CD1a, indicating that this distinct anatomic region contributes to pre–T cell development, as does the subcapsular region of the thymus. Thus, we provide evidence of a role for the human tonsil in a comprehensive program of extrathymic T cell development. PMID:22378041

The relative efficacy of pamphlets, CD-ROM, and the Internet for disseminating adolescent drug abuse prevention programs: an exploratory study.

PubMed

Di Noia, Jennifer; Schwinn, Traci M; Dastur, Zubin A; Schinke, Steven P

2003-12-01

Despite the availability of an increasing array of empirically validated adolescent drug abuse prevention programs, program materials and evaluation findings are poorly disseminated. CD-ROM and the Internet hold promise for disseminating this information to schools and agencies that directly serve youth, and to policy-making bodies that exercise control over funds to support adolescent drug abuse prevention programming. However, data on the relative efficacy of these newer technologies over conventional print means of dissemination are lacking. Recruited through schools, community agencies, and policy-making bodies, 188 professionals were randomized to receive prevention program materials via pamphlets (55 participants), CD-ROM (64 participants), and the Internet (69 participants). Participants completed pretest, posttest, and 6-month follow-up measures that assessed their access to prevention program materials; self-efficacy for identifying, obtaining, and recommending these programs; and their likelihood of requesting, implementing, and recommending prevention programs to their constituents. Participants exposed to dissemination via CD-ROM and the Internet evidenced the greatest short- and long-term gains on accessibility, self-efficacy, and behavioral intention variables. CD-ROM and the Internet are viable means for disseminating adolescent drug abuse prevention programs to schools, community agencies, and policy-making bodies, and should be increasingly used for dissemination purposes.

The relative efficacy of pamphlets, CD-ROM, and the Internet for disseminating adolescent drug abuse prevention programs: an exploratory study⋆

PubMed Central

Di Noia, Jennifer; Schwinn, Traci M.; Dastur, Zubin A.; Schinke, Steven P.

2010-01-01

Background Despite the availability of an increasing array of empirically validated adolescent drug abuse prevention programs, program materials and evaluation findings are poorly disseminated. CD-ROM and the Internet hold promise for disseminating this information to schools and agencies that directly serve youth, and to policy-making bodies that exercise control over funds to support adolescent drug abuse prevention programming. However, data on the relative efficacy of these newer technologies over conventional print means of dissemination are lacking. Methods Recruited through schools, community agencies, and policy-making bodies, 188 professionals were randomized to receive prevention program materials via pamphlets (55 participants), CD-ROM (64 participants), and the Internet (69 participants). Participants completed pretest, posttest, and 6-month follow-up measures that assessed their access to prevention program materials; self-efficacy for identifying, obtaining, and recommending these programs; and their likelihood of requesting, implementing, and recommending prevention programs to their constituents. Results Participants exposed to dissemination via CD-ROM and the Internet evidenced the greatest short- and long-term gains on accessibility, self-efficacy, and behavioral intention variables. Conclusions CD-ROM and the Internet are viable means for disseminating adolescent drug abuse prevention programs to schools, community agencies, and policy-making bodies, and should be increasingly used for dissemination purposes. PMID:14636798

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

A Parallel Vector Machine for the PM Programming Language

NASA Astrophysics Data System (ADS)

Bellerby, Tim

2016-04-01

PM is a new programming language which aims to make the writing of computational geoscience models on parallel hardware accessible to scientists who are not themselves expert parallel programmers. It is based around the concept of communicating operators: language constructs that enable variables local to a single invocation of a parallelised loop to be viewed as if they were arrays spanning the entire loop domain. This mechanism enables different loop invocations (which may or may not be executing on different processors) to exchange information in a manner that extends the successful Communicating Sequential Processes idiom from single messages to collective communication. Communicating operators avoid the additional synchronisation mechanisms, such as atomic variables, required when programming using the Partitioned Global Address Space (PGAS) paradigm. Using a single loop invocation as the fundamental unit of concurrency enables PM to uniformly represent different levels of parallelism from vector operations through shared memory systems to distributed grids. This paper describes an implementation of PM based on a vectorised virtual machine. On a single processor node, concurrent operations are implemented using masked vector operations. Virtual machine instructions operate on vectors of values and may be unmasked, masked using a Boolean field, or masked using an array of active vector cell locations. Conditional structures (such as if-then-else or while statement implementations) calculate and apply masks to the operations they control. A shift in mask representation from Boolean to location-list occurs when active locations become sufficiently sparse. Parallel loops unfold data structures (or vectors of data structures for nested loops) into vectors of values that may additionally be distributed over multiple computational nodes and then split into micro-threads compatible with the size of the local cache. Inter-node communication is accomplished using standard OpenMP and MPI. Performance analyses of the PM vector machine, demonstrating its scaling properties with respect to domain size and the number of processor nodes will be presented for a range of hardware configurations. The PM software and language definition are being made available under unrestrictive MIT and Creative Commons Attribution licenses respectively: www.pm-lang.org.

How to estimate the cost of point-of-care CD4 testing in program settings: an example using the Alere Pima Analyzer in South Africa.

PubMed

Larson, Bruce; Schnippel, Kathryn; Ndibongo, Buyiswa; Long, Lawrence; Fox, Matthew P; Rosen, Sydney

2012-01-01

Integrating POC CD4 testing technologies into HIV counseling and testing (HCT) programs may improve post-HIV testing linkage to care and treatment. As evaluations of these technologies in program settings continue, estimates of the costs of POC CD4 tests to the service provider will be needed and estimates have begun to be reported. Without a consistent and transparent methodology, estimates of the cost per CD4 test using POC technologies are likely to be difficult to compare and may lead to erroneous conclusions about costs and cost-effectiveness. This paper provides a step-by-step approach for estimating the cost per CD4 test from a provider's perspective. As an example, the approach is applied to one specific POC technology, the Pima Analyzer. The costing approach is illustrated with data from a mobile HCT program in Gauteng Province of South Africa. For this program, the cost per test in 2010 was estimated at $23.76 (material costs  = $8.70; labor cost per test  = $7.33; and equipment, insurance, and daily quality control  = $7.72). Labor and equipment costs can vary widely depending on how the program operates and the number of CD4 tests completed over time. Additional costs not included in the above analysis, for on-going training, supervision, and quality control, are likely to increase further the cost per test. The main contribution of this paper is to outline a methodology for estimating the costs of incorporating POC CD4 testing technologies into an HCT program. The details of the program setting matter significantly for the cost estimate, so that such details should be clearly documented to improve the consistency, transparency, and comparability of cost estimates.

Influence of antiretroviral therapy on programmed death-1 (CD279) expression on T cells in lymph nodes of human immunodeficiency virus-infected individuals.

PubMed

Ehrhard, Simone; Wernli, Marion; Dürmüller, Ursula; Battegay, Manuel; Gudat, Fred; Erb, Peter

2009-10-01

Human immunodeficiency virus infection leads to T-cell exhaustion and involution of lymphoid tissue. Recently, the programmed death-1 pathway was found to be crucial for virus-specific T-cell exhaustion during human immunodeficiency virus infection. Programmed death-1 expression was elevated on human immunodeficiency virus-specific peripheral blood CD8+ and CD4+ T cells and correlated with disease severity. During human immunodeficiency infection, lymphoid tissue acts as a major viral reservoir and is an important site for viral replication, but it is also essential for regulatory processes important for immune recovery. We compared programmed death-1 expression in 2 consecutive inguinal lymph nodes of 14 patients, excised before antiretroviral therapy (antiretroviral therapy as of 1997-1999) and 16 to 20 months under antiretroviral therapy. In analogy to lymph nodes of human immunodeficiency virus-negative individuals, in all treated patients, the germinal center area decreased, whereas the number of germinal centers did not significantly change. Programmed death-1 expression was mostly found in germinal centers. The absolute extent of programmed death 1 expression per section was not significantly altered after antiretroviral therapy resulting in a significant-relative increase of programmed death 1 per shrunken germinal center. In colocalization studies, CD45R0+ cells that include helper/inducer T cells strongly expressed programmed death-1 before and during therapy, whereas CD8+ T cells, fewer in numbers, showed a weak expression for programmed death-1. Thus, although antiretroviral therapy seems to reduce the number of programmed death-1-positive CD8+ T lymphocytes within germinal centers, it does not down-regulate programmed death-1 expression on the helper/inducer T-cell subset that may remain exhausted and therefore unable to trigger immune recovery.

Validation of masks for determination of V̇O2 max in horses exercising at high intensity.

PubMed

Sides, R H; Kirkpatrick, R; Renner, E; Gough, K; Katz, L M; Evans, D L; Bayly, W M

2018-01-01

The need for a horse to be ridden while wearing a measurement device that allows unrestricted ventilation and gas exchange has hampered accurate measurement of its maximal oxygen consumption (V̇O 2 max) under field conditions. Design and validate a facemask with the potential to measure V̇O 2 max accurately in the field. Experiment with 6 × 6 Latin square design. Two variations of a mask and associated electronic control module (ECM) were designed to enable breath-by-breath measurement of airflows through two 7.8 cm diameter pneumotachometers located 7.5 cm in front of each narus. The ECM was comprised of an analogue-to-digital converter and a lithium-ion battery that provided power and signal filtering to the pneumotachometers and an oxygen sensing cell, and powered a pump connected to gas sampling ports between the nares and pneumotachometers. Airflow and oxygen content of inspired and expired gases were recorded through the ECM and electronically transferred to a notebook. V̇O 2 was determined from these recordings using a customised software program. Mask B encased the lower jaw. Mask R left the jaw free so the horse could wear a bit if ridden. V̇O 2 max and arterial blood gases were measured in 6 horses during multiple treadmill tests. Each mask was worn twice and results compared to those from an established open flow-through system (O) by ANOVA-RM (P<0.05). System utility was evaluated using the intraclass correlation coefficient of 4 independent raters. Blood gases and V̇O 2 max (151.9±7.0 [mean±s.d.; O], 151.5±9.6 [B], 149.5±7.5 [R] ml/[kg.min]) were not different between masks. V̇O 2 max measures were reproducible for each mask. Intraclass correlation coefficient between raters = 0.99. Some rebreathing of expired air from mask dead space. Masks capable of measuring V̇O 2 max during treadmill exercise were developed, tested and found to be accurate. Mask R has potential application to measurement of V̇O 2 max under field conditions. © 2017 EVJ Ltd.

Human-Specific Bacterial Pore-Forming Toxins Induce Programmed Necrosis in Erythrocytes

PubMed Central

LaRocca, Timothy J.; Stivison, Elizabeth A.; Hod, Eldad A.; Spitalnik, Steven L.; Cowan, Peter J.; Randis, Tara M.

2014-01-01

ABSTRACT A subgroup of the cholesterol-dependent cytolysin (CDC) family of pore-forming toxins (PFTs) has an unusually narrow host range due to a requirement for binding to human CD59 (hCD59), a glycosylphosphatidylinositol (GPI)-linked complement regulatory molecule. hCD59-specific CDCs are produced by several organisms that inhabit human mucosal surfaces and can act as pathogens, including Gardnerella vaginalis and Streptococcus intermedius. The consequences and potential selective advantages of such PFT host limitation have remained unknown. Here, we demonstrate that, in addition to species restriction, PFT ligation of hCD59 triggers a previously unrecognized pathway for programmed necrosis in primary erythrocytes (red blood cells [RBCs]) from humans and transgenic mice expressing hCD59. Because they lack nuclei and mitochondria, RBCs have typically been thought to possess limited capacity to undergo programmed cell death. RBC programmed necrosis shares key molecular factors with nucleated cell necroptosis, including dependence on Fas/FasL signaling and RIP1 phosphorylation, necrosome assembly, and restriction by caspase-8. Death due to programmed necrosis in RBCs is executed by acid sphingomyelinase-dependent ceramide formation, NADPH oxidase- and iron-dependent reactive oxygen species formation, and glycolytic formation of advanced glycation end products. Bacterial PFTs that are hCD59 independent do not induce RBC programmed necrosis. RBC programmed necrosis is biochemically distinct from eryptosis, the only other known programmed cell death pathway in mature RBCs. Importantly, RBC programmed necrosis enhances the growth of PFT-producing pathogens during exposure to primary RBCs, consistent with a role for such signaling in microbial growth and pathogenesis. PMID:25161188

Creating a CD-ROM program for cancer-related patient education.

PubMed

Agre, Patricia; Dougherty, James; Pirone, Jane

2002-04-01

To describe the process of developing a cancer-related patient and family education CD-ROM program and initial evaluation results. Published research, theory, practice, and personal experience. CD-ROM programs can be far more comprehensive than the booklets and videotapes used more commonly in patient education. Developing CD-ROM programs requires funding, organizational skills, access to content experts, and a team composed of people who have the varied skills required for a finished multimedia product. The time frame for CD-ROM production is often longer than that of other patient-education formats. Published reports and this institution's experience confirm that patients accept this medium. Evaluation to date suggests that CD-ROMs may be more useful to patients and their families than any other single information source. CD-ROM technology is more expensive than videotapes and booklets, but it allows for greater depth of content and may satisfy a broader range of educational needs than other media. Funding often can be obtained through foundations and with unrestricted educational grants from pharmaceutical companies. Nurses can lead multidisciplinary teams to produce CD-ROMs for their patient populations. These programs can be used before a patient has a first consultation to introduce a cancer or treatment and anytime during cancer diagnosis and treatment. They can reinforce one-on-one teaching or provide greater depth of content than ever could be provided in individualized teaching sessions. They can facilitate patients' self-directed learning and may allow nurses and doctors to teach on a different level. These programs also can complement patients' Internet searches either by creating a solid foundation for further investigation or by confirming the reliability of information gained through a variety of Internet sources.

Structural analysis of a novel rabbit monoclonal antibody R53 targeting an epitope in HIV-1 gp120 C4 region critical for receptor and co-receptor binding

DOE PAGES

Pan, Ruimin; Chen, Yuxin; Vaine, Michael; ...

2015-07-15

The fourth conserved region (C4) in the HIV-1 envelope glycoprotein (Env) gp120 is a structural element that is important for its function, as it binds to both the receptor CD4 and the co-receptor CCR5/CXCR4. It has long been known that this region is highly immunogenic and that it harbors B-cell as well as T-cell epitopes. It is the target of a number of antibodies in animal studies, which are called CD4-blockers. However, the mechanism by which the virus shields itself from such antibody responses is not known. Here, we determined the crystal structure of R53 in complex with its epitopemore » peptide using a novel anti-C4 rabbit monoclonal antibody R53. Our data show that although the epitope of R53 covers a highly conserved sequence 433AMYAPPI 439, it is not available in the gp120 trimer and in the CD4-bound conformation. Our results suggest a masking mechanism to explain how HIV-1 protects this critical region from the human immune system.« less

Structural analysis of a novel rabbit monoclonal antibody R53 targeting an epitope in HIV-1 gp120 C4 region critical for receptor and co-receptor binding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Ruimin; Chen, Yuxin; Vaine, Michael

The fourth conserved region (C4) in the HIV-1 envelope glycoprotein (Env) gp120 is a structural element that is important for its function, as it binds to both the receptor CD4 and the co-receptor CCR5/CXCR4. It has long been known that this region is highly immunogenic and that it harbors B-cell as well as T-cell epitopes. It is the target of a number of antibodies in animal studies, which are called CD4-blockers. However, the mechanism by which the virus shields itself from such antibody responses is not known. Here, we determined the crystal structure of R53 in complex with its epitopemore » peptide using a novel anti-C4 rabbit monoclonal antibody R53. Our data show that although the epitope of R53 covers a highly conserved sequence 433AMYAPPI 439, it is not available in the gp120 trimer and in the CD4-bound conformation. Our results suggest a masking mechanism to explain how HIV-1 protects this critical region from the human immune system.« less

Levels of soluble CD30 in cord blood and peripheral blood during childhood are not correlated with the development of atopic disease or a family history of atopy.

PubMed

Holmlund, U; Bengtsson, A; Nilsson, C; Kusoffsky, E; Lilja, G; Scheynius, A; Sverremark-Ekström, E

2003-11-01

The CD30 molecule has been linked to Th2 responses. Furthermore, elevated levels of the soluble form of CD30 (sCD30) in blood as well as of the expression of CD30 on the plasma membrane of T cells are associated with atopic disease. To assess the potential usefulness of sCD30 levels as a prognostic indicator of and/or diagnostic marker for the development of atopic disease in children. sCD30 levels in cord blood and peripheral blood from 36 2-year-old (10 atopic and 26 non-atopic) and 74 7-year-old (35 atopic and 39 non-atopic) children were determined employing an ELISA procedure. Atopy was diagnosed on the basis of clinical evaluation in combination with a positive skin prick test. No significant correlation between sCD30 levels in cord blood and the development of atopic disease at 2 or 7 years of age was observed. At 7 years of age, the circulating sCD30 levels in children with atopic disease (median 41 U/mL, range 6-503 U/mL) did not differ from the corresponding values for non-atopic subjects (median 41 U/mL, range 8-402 U/mL). The same was true for children at 2 years of age. Furthermore, the sCD30 levels of children who had developed atopic eczema/dermatitis syndrome by the age of 7 years (median 49 U/mL, range 14-503 U/mL) were not significantly elevated in comparison with those of the non-atopic children. Finally, neither sCD30 levels in cord blood nor peripheral blood at 2 or 7 years of age could be linked to a family history of atopy. These findings indicate that the sCD30 concentration in cord blood is not a reliable prognostic indicator of, nor a useful diagnostic marker for, atopic disease in children up to 7 years of age. If such correlations do exist, they might be masked by age-dependent variations in the circulating levels of sCD30, which may reflect individual differences in the maturation of children's immunological responses.

Effects of adhesions of amorphous Fe and Al hydroxides on surface charge and adsorption of K+ and Cd2+ on rice roots.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Zhou, Qin; Xu, Ren-Kou

2017-11-01

Iron (Fe) and aluminum (Al) hydroxides in variable charge soils attached to rice roots may affect surface-charge properties and subsequently the adsorption and uptake of nutrients and toxic metals by the roots. Adhesion of amorphous Fe and Al hydroxides onto rice roots and their effects on zeta potential of roots and adsorption of potassium (K + ) and cadmium (Cd 2+ ) by roots were investigated. Rice roots adsorbed more Al hydroxide than Fe hydroxide because of the greater positive charge on Al hydroxide. Adhesion of Fe and Al hydroxides decreased the negative charge on rice roots, and a greater effect of the Al hydroxide. Consequently, adhesion of Fe and Al hydroxides reduced the K + and Cd 2+ adsorption by rice roots. The results of attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) and desorption of K + and Cd 2+ from rice roots indicated that physical masking by Fe and Al hydroxides and diffuse-layer overlapping between the positively-charged hydroxides and negatively-charged roots were responsible for the reduction of negative charge on roots induced by adhesion of the hydroxides. Therefore, the interaction between Fe and Al hydroxides and rice roots reduced negative charge on roots and thus inhibited their adsorption of nutrient and toxic cations. Copyright © 2017 Elsevier Inc. All rights reserved.

Nanosized UCMSC-derived extracellular vesicles but not conditioned medium exclusively inhibit the inflammatory response of stimulated T cells: implications for nanomedicine.

PubMed

Monguió-Tortajada, Marta; Roura, Santiago; Gálvez-Montón, Carolina; Pujal, Josep Maria; Aran, Gemma; Sanjurjo, Lucía; Franquesa, Marcel la; Sarrias, Maria-Rosa; Bayes-Genis, Antoni; Borràs, Francesc E

2017-01-01

Undesired immune responses have drastically hampered outcomes after allogeneic organ transplantation and cell therapy, and also lead to inflammatory diseases and autoimmunity. Umbilical cord mesenchymal stem cells (UCMSCs) have powerful regenerative and immunomodulatory potential, and their secreted extracellular vesicles (EVs) are envisaged as a promising natural source of nanoparticles to increase outcomes in organ transplantation and control inflammatory diseases. However, poor EV preparations containing highly-abundant soluble proteins may mask genuine vesicular-associated functions and provide misleading data. Here, we used Size-Exclusion Chromatography (SEC) to successfully isolate EVs from UCMSCs-conditioned medium. These vesicles were defined as positive for CD9, CD63, CD73 and CD90, and their size and morphology characterized by NTA and cryo-EM. Their immunomodulatory potential was determined in polyclonal T cell proliferation assays, analysis of cytokine profiles and in the skewing of monocyte polarization. In sharp contrast to the non-EV containing fractions, to the complete conditioned medium and to ultracentrifuged pellet, SEC-purified EVs from UCMSCs inhibited T cell proliferation, resembling the effect of parental UCMSCs. Moreover, while SEC-EVs did not induce cytokine response, the non-EV fractions, conditioned medium and ultracentrifuged pellet promoted the secretion of pro-inflammatory cytokines by polyclonally stimulated T cells and supported Th17 polarization. In contrast, EVs did not induce monocyte polarization, but the non-EV fraction induced CD163 and CD206 expression and TNF-α production in monocytes. These findings increase the growing evidence confirming that EVs are an active component of MSC's paracrine immunosuppressive function and affirm their potential for therapeutics in nanomedicine. In addition, our results highlight the importance of well-purified and defined preparations of MSC-derived EVs to achieve the immunosuppressive effect.

Two-layer critical dimensions and overlay process window characterization and improvement in full-chip computational lithography

NASA Astrophysics Data System (ADS)

Sturtevant, John L.; Liubich, Vlad; Gupta, Rachit

2016-04-01

Edge placement error (EPE) was a term initially introduced to describe the difference between predicted pattern contour edge and the design target for a single design layer. Strictly speaking, this quantity is not directly measurable in the fab. What is of vital importance is the relative edge placement errors between different design layers, and in the era of multipatterning, the different constituent mask sublayers for a single design layer. The critical dimensions (CD) and overlay between two layers can be measured in the fab, and there has always been a strong emphasis on control of overlay between design layers. The progress in this realm has been remarkable, accelerated in part at least by the proliferation of multipatterning, which reduces the available overlay budget by introducing a coupling of overlay and CD errors for the target layer. Computational lithography makes possible the full-chip assessment of two-layer edge to edge distances and two-layer contact overlap area. We will investigate examples of via-metal model-based analysis of CD and overlay errors. We will investigate both single patterning and double patterning. For single patterning, we show the advantage of contour-to-contour simulation over contour to target simulation, and how the addition of aberrations in the optical models can provide a more realistic CD-overlay process window (PW) for edge placement errors. For double patterning, the interaction of 4-layer CD and overlay errors is very complex, but we illustrate that not only can full-chip verification identify potential two-layer hotspots, the optical proximity correction engine can act to mitigate such hotspots and enlarge the joint CD-overlay PW.

Comparison of line shortening assessed by aerial image and wafer measurements

NASA Astrophysics Data System (ADS)

Ziegler, Wolfram; Pforr, Rainer; Thiele, Joerg; Maurer, Wilhelm

1997-02-01

Increasing number of patterns per area and decreasing linewidth demand enhancement technologies for optical lithography. OPC, the correction of systematic non-linearity in the pattern transfer process by correction of design data is one possibility to tighten process control and to increase the lifetime of existing lithographic equipment. The two most prominent proximity effects to be corrected by OPC are CD variation and line shortening. Line shortening measured on a wafer is up to 2 times larger than full resist simulation results. Therefore, the influence of mask geometry to line shortening is a key item to parameterize lithography. The following paper discusses the effect of adding small serifs to line ends with 0.25 micrometer ground-rule design. For reticles produced on an ALTA 3000 with standard wet etch process, the corner rounding on them mask can be reduced by adding serifs of a certain size. The corner rounding was measured and the effect on line shortening on the wafer is determined. This was investigated by resist measurements on wafer, aerial image plus resist simulation and aerial image measurements on the AIMS microscope.

CDO budgeting

NASA Astrophysics Data System (ADS)

Nesladek, Pavel; Wiswesser, Andreas; Sass, Björn; Mauermann, Sebastian

2008-04-01

The Critical dimension off-target (CDO) is a key parameter for mask house customer, affecting directly the performance of the mask. The CDO is the difference between the feature size target and the measured feature size. The change of CD during the process is either compensated within the process or by data correction. These compensation methods are commonly called process bias and data bias, respectively. The difference between data bias and process bias in manufacturing results in systematic CDO error, however, this systematic error does not take into account the instability of the process bias. This instability is a result of minor variations - instabilities of manufacturing processes and changes in materials and/or logistics. Using several masks the CDO of the manufacturing line can be estimated. For systematic investigation of the unit process contribution to CDO and analysis of the factors influencing the CDO contributors, a solid understanding of each unit process and huge number of masks is necessary. Rough identification of contributing processes and splitting of the final CDO variation between processes can be done with approx. 50 masks with identical design, material and process. Such amount of data allows us to identify the main contributors and estimate the effect of them by means of Analysis of variance (ANOVA) combined with multivariate analysis. The analysis does not provide information about the root cause of the variation within the particular unit process, however, it provides a good estimate of the impact of the process on the stability of the manufacturing line. Additionally this analysis can be used to identify possible interaction between processes, which cannot be investigated if only single processes are considered. Goal of this work is to evaluate limits for CDO budgeting models given by the precision and the number of measurements as well as partitioning the variation within the manufacturing process. The CDO variation splits according to the suggested model into contributions from particular processes or process groups. Last but not least the power of this method to determine the absolute strength of each parameter will be demonstrated. Identification of the root cause of this variation within the unit process itself is not scope of this work.

Space station MSFC-DPD-235/DR no. MA-05 phase C/D program development plan. Volume 2: Phase C/D, programmatic requirements

NASA Technical Reports Server (NTRS)

1971-01-01

The design plan requirements define the design implementation and control requirements for Phase C/D of the Modular Space Station Project and specifically address the Initial Space Station phase of the Space Station Program (modular). It is based primarily on the specific objective of translating the requirements of the Space Station Program, Project, Interface, and Support Requirements and preliminary contract end x item specifications into detail design of the operational systems which comprise the initial space station. This document is designed to guide aerospace contractors in the planning and bidding for Phase C/D.

Carbon contamination analysis and its effect on extreme ultra violet mask imaging performance using coherent scattering microscopy/in-situ accelerated contamination system.

PubMed

Jeong, Chang Young; Lee, Sangsul; Doh, Jong Gul; Lee, Jae Uk; Cha, Han-sun; Nichols, William T; Lee, Dong Gun; Kim, Seong Sue; Cho, Han Ku; Rah, Seung-yu; Ahn, Jinho

2011-07-01

The coherent scattering microscopy/in-situ accelerated contamination system (CSM/ICS) is a developmental metrology tool designed to analyze the impact of carbon contamination on the imaging performance. It was installed at 11B EUVL beam-line of the Pohang Accelerator Laboratory (PAL). Monochromatized 13.5 nm wavelength beam with Mo/Si multilayer mirrors and zirconium filters was used. The CSM/ICS is composed of the CSM for measuring imaging properties and the ICS for implementing acceleration of carbon contamination. The CSM has been proposed as an actinic inspection technique that records the coherent diffraction pattern from the EUV mask and reconstructs its aerial image using a phase retrieval algorithm. To improve the CSM measurement accuracy, optical and electrical noises of main chamber were minimized. The background noise level measured by CCD camera was approximately 8.5 counts (3 sigma) when the EUV beam was off. Actinic CD measurement repeatability was <1 A (3 sigma) at 17.5 nm line and space pattern. The influence of carbon contamination on the imaging properties can be analyzed by transferring EUV mask to CSM imaging center position after executing carbon contamination without a fine alignment system. We also installed photodiode and ellipsometry for in-situ reflectivity and thickness measurement. This paper describes optical design and system performance observed during the first phase of integration, including CSM imaging performance and carbon contamination analysis results.

Update on clinical attire requirements in dental hygiene programs.

PubMed

Foley, E S

1994-01-01

Many changes have occurred in the clinical appearance of dental hygienists in the past few years because of increased emphasis on infection control and disease prevention. The purpose of this study was to assess dental hygiene program clinical attire requirements in 1993 and to compare them with requirements as described by a 1988 survey. Checklist questionnaires were mailed to the directors of all 211 dental hygiene programs in the United States and Puerto Rico in October 1993. Questions were asked regarding clinical attire requirements for students and faculty, including uniforms, gowns, lab coats, masks, protective eyewear, shoes, hair coverings, laundry management, and changes under consideration. Percentages were calculated by region and for all responding programs. Of 211 questionnaires mailed, 178 were returned, for a response rate of 84%. Results indicated that students and faculty are currently wearing more colorful uniforms and scrubs than in 1988. Long-sleeved lab coats, disposable gowns, and washable surgical gowns are increasing in use. Glasses and face masks were required for all students and faculty in both surveys, but chin-length face shields are increasing in use as optional face protection. In most instances, face shields are worn with face masks. Laundry services are being provided for faculty (employees); however, most students continue to be responsible for their own laundry after being instructed to follow stringent guidelines taught by the faculty. Increasing emphasis on personal and patient protection is moving clinical attire requirements toward a more surgical appearance. Dental hygiene educators continue to monitor and to stay current with federal infection control recommendations, regulations, and guidelines.

Correspondence between Video CD-ROM and Community-Based Job Preferences for Individuals with Developmental Disabilities

ERIC Educational Resources Information Center

Ellerd, David A.; Morgan, Robert L.; Salzberg, Charles L.

2006-01-01

This study examined correspondence in selections of job preference across a video CD-ROM assessment program, community jobs observed during employment site visits, and photographs of employment sites. For 20 participants ages 18 - 22 with developmental disabilities, the video CD-ROM program was initially administered to identify preferred jobs,…

AF Ni-Cd cell qualification program

NASA Technical Reports Server (NTRS)

Hall, Steve; Brown, Harry; Collins, G.; Hwang, Warren

1994-01-01

The present status of the USAF NiCd cell qualification program, which is underway at the Naval Surface Warfare Center-Crane Division, is summarized. The following topics are discussed: overview; background; purpose; stress tests; results for super Ni-Cd; results for SAFT cells; GPS stress test; GPS simulated orbit; and results for gates cells. The discussion is presented in viewgraph format.

HCIT Contrast Performance Sensitivity Studies: Simulation Versus Experiment

NASA Technical Reports Server (NTRS)

Sidick, Erkin; Shaklan, Stuart; Krist, John; Cady, Eric J.; Kern, Brian; Balasubramanian, Kunjithapatham

2013-01-01

Using NASA's High Contrast Imaging Testbed (HCIT) at the Jet Propulsion Laboratory, we have experimentally investigated the sensitivity of dark hole contrast in a Lyot coronagraph for the following factors: 1) Lateral and longitudinal translation of an occulting mask; 2) An opaque spot on the occulting mask; 3) Sizes of the controlled dark hole area. Also, we compared the measured results with simulations obtained using both MACOS (Modeling and Analysis for Controlled Optical Systems) and PROPER optical analysis programs with full three-dimensional near-field diffraction analysis to model HCIT's optical train and coronagraph.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Nanosize relief: from phase masks to antireflection coatings on quartz and silicon

NASA Astrophysics Data System (ADS)

Verevkin, Yu K.; Klimov, A. Yu; Gribkov, B. A.; Petryakov, V. N.; Koposova, E. V.; Olaizola, Santiago M.

2008-11-01

By using the interference of pulsed radiation and a complete lithographic cycle, phase masks on quartz and antireflection structures on quartz and silicon are produced. The transmission of radiation through a corrugated vacuum—solid interface is calculated by solving rigorously an integral equation with the help of a computer program for parameters close to experimental parameters. The results of measurements are in good agreement with calculations. The methods developed in the paper can be used for manufacturing optical and semiconductor devices.

Coma measurement by transmission image sensor with a PSM

NASA Astrophysics Data System (ADS)

Wang, Fan; Wang, Xiangzhao; Ma, Mingying; Zhang, Dongqing; Shi, Weijie; Hu, Jianming

2005-01-01

As feature size decreases, especially with the use of resolution enhancement technique such as off axis illumination and phase shifting mask, fast and accurate in-situ measurement of coma has become very important in improving the performance of modern lithographic tools. The measurement of coma can be achieved by the transmission image sensor, which is an aerial image measurement device. The coma can be determined by measuring the positions of the aerial image at multiple illumination settings. In the present paper, we improve the measurement accuracy of the above technique with an alternating phase shifting mask. Using the scalar diffraction theory, we analyze the effect of coma on the aerial image. To analyze the effect of the alternating phase shifting mask, we compare the pupil filling of the mark used in the above technique with that of the phase-shifted mark used in the new technique. We calculate the coma-induced image displacements of the marks at multiple partial coherence and NA settings, using the PROLITH simulation program. The simulation results show that the accuracy of coma measurement can increase approximately 20 percent using the alternating phase shifting mask.

Phase measurements of EUV mask defects

DOE PAGES

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; ...

2015-02-22

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

Defect inspection and printability study for 14 nm node and beyond photomask

NASA Astrophysics Data System (ADS)

Seki, Kazunori; Yonetani, Masashi; Badger, Karen; Dechene, Dan J.; Akima, Shinji

2016-10-01

Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is used with the High NA inspection optics. Litho-based inspection is a new inspection technology. This inspection uses the wafer lithography information, and as such, this method has automatic defect classification capability which is based on wafer printability. Both High resolution and Litho-based inspection methods are compared using 14 nm and 7 nm node programmed defect and production design masks. The defect sensitivity and mask inspectability is compared, in addition to comparing the defect classification and throughput. Additionally, the Cost / Infrastructure comparison is analyzed and the impact of each inspection method is discussed.

Contrasting patterns of hot spell effects on morbidity and mortality for cardiovascular diseases in the Czech Republic, 1994-2009

NASA Astrophysics Data System (ADS)

Hanzlíková, Hana; Plavcová, Eva; Kynčl, Jan; Kříž, Bohumír; Kyselý, Jan

2015-11-01

The study examines effects of hot spells on cardiovascular disease (CVD) morbidity and mortality in the population of the Czech Republic, with emphasis on differences between ischaemic heart disease (IHD) and cerebrovascular disease (CD) and between morbidity and mortality. Daily data on CVD morbidity (hospital admissions) and mortality over 1994-2009 were obtained from national hospitalization and mortality registers and standardized to account for long-term changes as well as seasonal and weekly cycles. Hot spells were defined as periods of at least two consecutive days with average daily air temperature anomalies above the 95 % quantile during June to August. Relative deviations of mortality and morbidity from the baseline were evaluated. Hot spells were associated with excess mortality for all examined cardiovascular causes (CVD, IHD and CD). The increases were more pronounced for CD than IHD mortality in most population groups, mainly in males. In the younger population (0-64 years), however, significant excess mortality was observed for IHD while there was no excess mortality for CD. A short-term displacement effect was found to be much larger for mortality due to CD than IHD. Excess CVD mortality was not accompanied by increases in hospital admissions and below-expected-levels of morbidity prevailed during hot spells, particularly for IHD in the elderly. This suggests that out-of-hospital deaths represent a major part of excess CVD mortality during heat and that for in-hospital excess deaths CVD is a masked comorbid condition rather than the primary diagnosis responsible for hospitalization.

Producible Alternative to CdTe for Epitaxy (PACE-2) of LWIR HgCdTe

DTIC Science & Technology

1984-01-01

esmv and .de~aty "p bisto momnberl isrepor cover the progre made toward the achievenientof device quality LWIR HgCdTe on an alternate substrte...initial phase of the research program en- titled, _Producible Alternative to CdTe for Epitaxyý(PACE-2) of LWIR HgCJie". Also described are alternate...objective of this program is the demonstration of the feasibility of PACE-2 technology through fabrication and evaluation of multi- plexed LWIR hybrid

Evaluation of a Stratified National Breast Screening Program in the United Kingdom: An Early Model-Based Cost-Effectiveness Analysis.

PubMed

Gray, Ewan; Donten, Anna; Karssemeijer, Nico; van Gils, Carla; Evans, D Gareth; Astley, Sue; Payne, Katherine

2017-09-01

To identify the incremental costs and consequences of stratified national breast screening programs (stratified NBSPs) and drivers of relative cost-effectiveness. A decision-analytic model (discrete event simulation) was conceptualized to represent four stratified NBSPs (risk 1, risk 2, masking [supplemental screening for women with higher breast density], and masking and risk 1) compared with the current UK NBSP and no screening. The model assumed a lifetime horizon, the health service perspective to identify costs (£, 2015), and measured consequences in quality-adjusted life-years (QALYs). Multiple data sources were used: systematic reviews of effectiveness and utility, published studies reporting costs, and cohort studies embedded in existing NBSPs. Model parameter uncertainty was assessed using probabilistic sensitivity analysis and one-way sensitivity analysis. The base-case analysis, supported by probabilistic sensitivity analysis, suggested that the risk stratified NBSPs (risk 1 and risk-2) were relatively cost-effective when compared with the current UK NBSP, with incremental cost-effectiveness ratios of £16,689 per QALY and £23,924 per QALY, respectively. Stratified NBSP including masking approaches (supplemental screening for women with higher breast density) was not a cost-effective alternative, with incremental cost-effectiveness ratios of £212,947 per QALY (masking) and £75,254 per QALY (risk 1 and masking). When compared with no screening, all stratified NBSPs could be considered cost-effective. Key drivers of cost-effectiveness were discount rate, natural history model parameters, mammographic sensitivity, and biopsy rates for recalled cases. A key assumption was that the risk model used in the stratification process was perfectly calibrated to the population. This early model-based cost-effectiveness analysis provides indicative evidence for decision makers to understand the key drivers of costs and QALYs for exemplar stratified NBSP. Copyright © 2017 International Society for Pharmacoeconomics and Outcomes Research (ISPOR). Published by Elsevier Inc. All rights reserved.

Computer-assisted Biology Learning Materials: Designing and Developing an Interactive CD on Spermatogenesis

NASA Astrophysics Data System (ADS)

Haviz, M.

2018-04-01

The purpose of this article is to design and develop an interactive CD on spermatogenesis. This is a research and development. Procedure of development is making an outline of media program, making flowchart, making story board, gathering of materials, programming and finishing. The quantitative data obtained were analyzed by descriptive statistics. Qualitative data obtained were analyzed with Miles and Huberman techniques. The instrument used is a validation sheet. The result of CD design with a Macro flash MX program shows there are 17 slides generated. This prototype obtained a valid value after a self-review technique with many revisions, especially on sound and programming. This finding suggests that process-oriented spermatogenesis can be audio-visualized into a more comprehensive form of learning media. But this interactive CD product needs further testing to determine consistency and resistance to revisions.

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Real-time implementation of second generation of audio multilevel information coding

NASA Astrophysics Data System (ADS)

Ali, Murtaza; Tewfik, Ahmed H.; Viswanathan, V.

1994-03-01

This paper describes real-time implementation of a novel wavelet- based audio compression method. This method is based on the discrete wavelet (DWT) representation of signals. A bit allocation procedure is used to allocate bits to the transform coefficients in an adaptive fashion. The bit allocation procedure has been designed to take advantage of the masking effect in human hearing. The procedure minimizes the number of bits required to represent each frame of audio signals at a fixed distortion level. The real-time implementation provides almost transparent compression of monophonic CD quality audio signals (samples at 44.1 KHz and quantized using 16 bits/sample) at bit rates of 64-78 Kbits/sec. Our implementation uses two ASPI Elf boards, each of which is built around a TI TMS230C31 DSP chip. The time required for encoding of a mono CD signal is about 92 percent of real time and that for decoding about 61 percent.

Optical critical dimension metrology for directed self-assembly assisted contact hole shrink

NASA Astrophysics Data System (ADS)

Dixit, Dhairya; Green, Avery; Hosler, Erik R.; Kamineni, Vimal; Preil, Moshe E.; Keller, Nick; Race, Joseph; Chun, Jun Sung; O'Sullivan, Michael; Khare, Prasanna; Montgomery, Warren; Diebold, Alain C.

2016-01-01

Directed self-assembly (DSA) is a potential patterning solution for future generations of integrated circuits. Its main advantages are high pattern resolution (˜10 nm), high throughput, no requirement of high-resolution mask, and compatibility with standard fab-equipment and processes. The application of Mueller matrix (MM) spectroscopic ellipsometry-based scatterometry to optically characterize DSA patterned contact hole structures fabricated with phase-separated polystyrene-b-polymethylmethacrylate (PS-b-PMMA) is described. A regression-based approach is used to calculate the guide critical dimension (CD), DSA CD, height of the PS column, thicknesses of underlying layers, and contact edge roughness of the post PMMA etch DSA contact hole sample. Scanning electron microscopy and imaging analysis is conducted as a comparative metric for scatterometry. In addition, optical model-based simulations are used to investigate MM elements' sensitivity to various DSA-based contact hole structures, predict sensitivity to dimensional changes, and its limits to characterize DSA-induced defects, such as hole placement inaccuracy, missing vias, and profile inaccuracy of the PMMA cylinder.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Low-Tech High-Tech.

ERIC Educational Resources Information Center

Hart, Tom

1997-01-01

Outlines how Compact Disc-interactive (CD-i)--software that looks like a CD-ROM but operates independently using a television set--can be used in elementary, secondary, and vocational education. Discusses the cost effectiveness of CD-i and compares costs and operational issues with CD-ROM. Describes special features of one CD-i program,…

Qualitative and quantitative analysis of PMN/T-cell interactions by InFlow and super-resolution microscopy.

PubMed

Balta, Emre; Stopp, Julian; Castelletti, Laura; Kirchgessner, Henning; Samstag, Yvonne; Wabnitz, Guido H

2017-01-01

Neutrophils or polymorphonuclear cells (PMN) eliminate bacteria via phagocytosis and/or NETosis. Apart from these conventional roles, PMN also have immune-regulatory functions. They can transdifferentiate and upregulate MHCII as well as ligands for costimulatory receptors which enables them to behave as antigen presenting cells (APC). The initial step for activating T-cells is the formation of an immune synapse between T-cells and antigen-presenting cells. However, the immune synapse that develops at the PMN/T-cell contact zone is as yet hardly investigated due to the non-availability of methods for analysis of large number of PMN interactions. In order to overcome these obstacles, we introduce here a workflow to analyse the immune synapse of primary human PMN and T-cells using multispectral imaging flow cytometry (InFlow microscopy) and super-resolution microscopy. For that purpose, we used CD3 and CD66b as the lineage markers for T-cells and PMN, respectively. Thereafter, we applied and critically discussed various "masks" for identification of T-cell PMN interactions. Using this approach, we found that a small fraction of transdifferentiated PMN (CD66b + CD86 high ) formed stable PMN/T-cell conjugates. Interestingly, while both CD3 and CD66b accumulation in the immune synapse was dependent on the maturation state of the PMN, only CD3 accumulation was greatly enhanced by the presence of superantigen. The actin cytoskeleton was weakly rearranged at the PMN side on the immune synapse upon contact with a T-cell in the presence of superantigen. A more detailed analysis using super-resolution microscopy (structured-illumination microscopy, SIM) confirmed this finding. Together, we present an InFlow microscopy based approach for the large scale analysis of PMN/T-cell interactions and - combined with SIM - a possibility for an in-depth analysis of protein translocation at the site of interactions. Copyright © 2016 Elsevier Inc. All rights reserved.

Insertion of the endotracheal tube, laryngeal mask airway and oesophageal-tracheal Combitube. A 6-month comparative prospective study of acquisition and retention skills by medical students.

PubMed

Weksler, N; Tarnopolski, A; Klein, M; Schily, M; Rozentsveig, V; Shapira, A R; Gurman, G M

2005-05-01

To assess the ability of medical students to learn and retain skills of airway manipulation for insertion of the endotracheal tube, the laryngeal mask airway (Laryngeal Mask Company, Henley-on-Thames, UK) and the oesophageal-tracheal Combitube (Kendall-Sheridan Catheter Corp., Argyle, NY, USA). A 6-month prospective study was conducted among fifth-year medical students attending a 3-week clerkship in the Division of Anesthesiology and Critical Care Medicine in the Soroka Medical Center. All the students viewed a demonstration of insertion technique for the endotracheal tube, the laryngeal mask airway and the Combitube, followed by formal teaching in a mannikin. At the end of the program, the insertion skills were demonstrated in the mannikin, the success rate on the first attempt was registered and the students were requested to assess (by questionnaire) their ability to execute airway manipulation (phase 1). Six months later, the students were requested to repeat the insertion technique, and a similar re-evaluation applied (phase 2). The success rate, during the first phase, at first attempts was 100% for the laryngeal mask airway and the Combitube, compared to 57.4% for the endotracheal tube (P < 0.02), and 92.6%, 96.2% and 62.9% (P < 0.02) respectively for the second phase of the study. Learning and retention skills of medical students, in a mannikin, are more accentuated with the laryngeal mask airway and the Combitube than seen with an endotracheal tube.

High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 November 1994--15 November 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandwisch, D.W.

1997-02-01

The objectives of this subcontract are to advance Solar Cells, Inc.`s (SCI`s) photovoltaic manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. Activities during the second year of the program concentrated on process development, equipment design and testing, quality assurance, and ES and H programs. These efforts broadly addressed the issues of the manufacturing process for producing thin-film monolithic CdS/CdTe photovoltaic modules.

Cancer vaccine enhanced, non-tumor-reactive CD8(+) T cells exhibit a distinct molecular program associated with "division arrest anergy".

PubMed

Beyer, Marc; Karbach, Julia; Mallmann, Michael R; Zander, Thomas; Eggle, Daniela; Classen, Sabine; Debey-Pascher, Svenja; Famulok, Michael; Jäger, Elke; Schultze, Joachim L

2009-05-15

Immune-mediated tumor rejection relies on fully functional T-cell responses and neutralization of an adverse tumor microenvironment. In clinical trials, we detected peptide-specific but non-tumor-reactive and therefore not fully functional CD8(+) T cells post-vaccination against tumor antigens. Understanding the molecular mechanisms behind nontumor reactivity will be a prerequisite to overcome this CD8(+) T-cell deviation. We report that these non-tumor-reactive CD8(+) T cells are characterized by a molecular program associated with hallmarks of "division arrest anergy." Non-tumor-reactive CD8(+) T cells are characterized by coexpression of CD7, CD25, and CD69 as well as elevated levels of lck(p505) and p27(kip1). In vivo quantification revealed high prevalence of non-tumor-reactive CD8(+) T cells with increased levels during cancer vaccination. Furthermore, their presence was associated with a trend toward shorter survival. Dynamics and frequencies of non-target-reactive CD8(+) T cells need to be further addressed in context of therapeutic vaccine development in cancer, chronic infections, and autoimmune diseases.

Retrogenic ICOS Expression Increases Differentiation of KLRG-1hi CD127lo CD8+ T Cells During Listeria Infection and Diminishes Recall Responses1

PubMed Central

Liu, Danya; Burd, Eileen M.; Coopersmith, Craig M.; Ford, Mandy L.

2016-01-01

Following T cell encounter with antigen, multiple signals are integrated to collectively induce distinct differentiation programs within antigen-specific CD8+ T cell populations. Several factors contribute to these cell fate decisions including the amount and duration of antigen, exposure to inflammatory cytokines, and degree of ligation of cosignaling molecules. The inducible costimulator (ICOS) is not expressed on resting T cells but is rapidly upregulated upon encounter with antigen. However, the impact of ICOS signaling on programmed differentiation is not well understood. In this study we therefore sought to determine the role of ICOS signaling on CD8+ T cell programmed differentiation. Through the creation of novel ICOS retrogenic antigen-specific TCR transgenic CD8+ T cells, we interrogated the phenotype, functionality, and recall potential of CD8+ T cells that receive early and sustained ICOS signaling during antigen exposure. Our results reveal that these ICOS signals critically impacted cell fate decisions of antigen-specific CD8+ T cells, resulting in increased frequencies of KLRG-1hiCD127lo cells, altered BLIMP-1, T-bet, and eomesodermin expression, and increased cytolytic capacity as compared to empty vector controls. Interestingly, however, ICOS retrogenic CD8+ T cells also preferentially homed to non-lymphoid organs, and exhibited reduced multi-cytokine functionality and reduced ability to mount secondary recall responses upon challenge in vivo. In sum, our results suggest that an altered differentiation program is induced following early and sustained ICOS expression, resulting in the generation of more cytolyticly potent, terminally differentiated effectors that possess limited capacity for recall response. PMID:26729800

Retrogenic ICOS Expression Increases Differentiation of KLRG-1hiCD127loCD8+ T Cells during Listeria Infection and Diminishes Recall Responses.

PubMed

Liu, Danya; Burd, Eileen M; Coopersmith, Craig M; Ford, Mandy L

2016-02-01

Following T cell encounter with Ag, multiple signals are integrated to collectively induce distinct differentiation programs within Ag-specific CD8(+) T cell populations. Several factors contribute to these cell fate decisions, including the amount and duration of Ag, exposure to inflammatory cytokines, and degree of ligation of cosignaling molecules. The ICOS is not expressed on resting T cells but is rapidly upregulated upon encounter with Ag. However, the impact of ICOS signaling on programmed differentiation is not well understood. In this study, we therefore sought to determine the role of ICOS signaling on CD8(+) T cell programmed differentiation. Through the creation of novel ICOS retrogenic Ag-specific TCR-transgenic CD8(+) T cells, we interrogated the phenotype, functionality, and recall potential of CD8(+) T cells that receive early and sustained ICOS signaling during Ag exposure. Our results reveal that these ICOS signals critically impacted cell fate decisions of Ag-specific CD8(+) T cells, resulting in increased frequencies of KLRG-1(hi)CD127(lo) cells, altered BLIMP-1, T-bet, and eomesodermin expression, and increased cytolytic capacity as compared with empty vector controls. Interestingly, however, ICOS retrogenic CD8(+) T cells also preferentially homed to nonlymphoid organs and exhibited reduced multicytokine functionality and reduced ability to mount secondary recall responses upon challenge in vivo. In sum, our results suggest that an altered differentiation program is induced following early and sustained ICOS expression, resulting in the generation of more cytolyticly potent, terminally differentiated effectors that possess limited capacity for recall response. Copyright © 2016 by The American Association of Immunologists, Inc.

Ascorbic acid supplementation diminishes microparticle elevations and neutrophil activation following SCUBA diving.

PubMed

Yang, Ming; Barak, Otto F; Dujic, Zeljko; Madden, Dennis; Bhopale, Veena M; Bhullar, Jasjeet; Thom, Stephen R

2015-08-15

Predicated on evidence that diving-related microparticle generation is an oxidative stress response, this study investigated the role that oxygen plays in augmenting production of annexin V-positive microparticles associated with open-water SCUBA diving and whether elevations can be abrogated by ascorbic acid. Following a cross-over study design, 14 male subjects ingested placebo and 2-3 wk later ascorbic acid (2 g) daily for 6 days prior to performing either a 47-min dive to 18 m of sea water while breathing air (∼222 kPa N2/59 kPa O2) or breathing a mixture of 60% O2/balance N2 from a tight-fitting face mask at atmospheric pressure for 47 min (∼40 kPa N2/59 kPa O2). Within 30 min after the 18-m dive in the placebo group, neutrophil activation, and platelet-neutrophil interactions occurred, and the total number of microparticles, as well as subgroups bearing CD66b, CD41, CD31, CD142 proteins or nitrotyrosine, increased approximately twofold. No significant elevations occurred among divers after ingesting ascorbic acid, nor were elevations identified in either group after breathing 60% O2. Ascorbic acid had no significant effect on post-dive intravascular bubble production quantified by transthoracic echocardiography. We conclude that high-pressure nitrogen plays a key role in neutrophil and microparticle-associated changes with diving and that responses can be abrogated by dietary ascorbic acid supplementation. Copyright © 2015 the American Physiological Society.

Software on diffractive optics and computer-generated holograms

NASA Astrophysics Data System (ADS)

Doskolovich, Leonid L.; Golub, Michael A.; Kazanskiy, Nikolay L.; Khramov, Alexander G.; Pavelyev, Vladimir S.; Seraphimovich, P. G.; Soifer, Victor A.; Volotovskiy, S. G.

1995-01-01

The `Quick-DOE' software for an IBM PC-compatible computer is aimed at calculating the masks of diffractive optical elements (DOEs) and computer generated holograms, computer simulation of DOEs, and for executing a number of auxiliary functions. In particular, among the auxiliary functions are the file format conversions, mask visualization on display from a file, implementation of fast Fourier transforms, and arranging and preparation of composite images for the output on a photoplotter. The software is aimed for use by opticians, DOE designers, and the programmers dealing with the development of the program for DOE computation.

Maternal CD4+ cell count decline after interruption of antiretroviral prophylaxis for the prevention of mother-to-child transmission of HIV.

PubMed

Ekouevi, Didier; Abrams, Elaine J; Schlesinger, Malka; Myer, Landon; Phanuphak, Nittaya; Carter, Rosalind J

2012-01-01

We evaluated maternal CD4+ cell count (CD4+) decline after PMTCT prophylaxis in a multi-country HIV care program. Analysis was restricted to antiretroviral therapy (ART)-naive, HIV-infected pregnant women with CD4+ ≥250 cells/mm(3) at enrollment. Single-dose nevirapine (sd-NVP) or short-course antiretroviral prophylaxis (sc-ARVp) with zidovudine (AZT) or AZT + lamivudine (3TC) was initiated in 11 programs while 2 programs offered triple-drug antiretroviral prophylaxis (tARVp) (AZT+3TC+ NVP or nelfinavir). All regimens were stopped at delivery. CD4+ decline was defined as proportion of women who declined to CD4+ <350 cells/mm(3) or <200 cells/mm(3) at 24 months. Weibull regression was used for multivariable analysis. A total of 1,393 women with enrollment CD4+ ≥250 cells/mm(3) initiated tARVp (172; 12%) or sc-ARVp (532; 38%) during pregnancy or received intrapartum sd-NVP (689; 50%). At enrollment, maternal median age was 27 years (interquartile range (IQR) 23-30), median CD4+ was 469 cells/mm(3) (IQR: 363-613). At 24 months post-delivery, the cumulative probability of CD4+ decline to <200 cells/mm(3) was 12% (95% CI: 10-14). Among a subgroup of 903 women with CD4+ ≥400 cells at enrollment, the 24 month cumulative probability of decline to CD4+ <350 cells/mm(3) was 28%; (95% CI: 25-32). Lower antepartum CD4+ was associated with higher probability of CD4+ decline to <350 cells/mm(3): 46% (CD4+400-499 cells/mm(3)) vs. 19% (CD4+ ≥500 cells/mm(3)). After adjusting for age, enrollment CD4+ and WHO stage, women who received tARVp or sd-NVP were twice as likely to experience CD4+ decline to <350 cells/mm(3) within 24 months than women receiving sc-ARVp (adjusted hazard ratio: 2.2; 95% CI: 1.5-3.2, p<0.0001). Decline in CD4+ cell count to ART eligibility thresholds by 24 months postpartum was common among women receiving PMTCT prophylaxis during pregnancy and/or delivery.

Report on an Investigation into an Entry Level Clinical Doctorate for the Genetic Counseling Profession and a Survey of the Association of Genetic Counseling Program Directors.

PubMed

Reiser, Catherine; LeRoy, Bonnie; Grubs, Robin; Walton, Carol

2015-10-01

The master's degree is the required entry-level degree for the genetic counseling profession in the US and Canada. In 2012 the Association of Genetic Counseling Program Directors (AGCPD) passed resolutions supporting retention of the master's as the entry-level and terminal degree and opposing introduction of an entry-level clinical doctorate (CD) degree. An AGCPD workgroup surveyed directors of all 34 accredited training programs with the objective of providing the Genetic Counseling Advanced Degrees Task Force (GCADTF) with information regarding potential challenges if master's programs were required to transition to an entry-level CD. Program demographics, projected ability to transition to an entry-level CD, factors influencing ability to transition, and potential effects of transition on programs, students and the genetic counseling workforce were characterized. Two programs would definitely be able to transition, four programs would close, thirteen programs would be at risk to close and fourteen programs would probably be able to transition with varying degrees of difficulty. The most frequently cited limiting factors were economic, stress on clinical sites, and administrative approval of a new degree/program. Student enrollment under an entry-level CD model was projected to decrease by 26.2 %, negatively impacting the workforce pipeline. The results further illuminate and justify AGCPD's position to maintain the master's as the entry-level degree.

Combining new technologies for effective collection development: a bibliometric study using CD-ROM and a database management program.

PubMed Central

Burnham, J F; Shearer, B S; Wall, J C

1992-01-01

Librarians have used bibliometrics for many years to assess collections and to provide data for making selection and deselection decisions. With the advent of new technology--specifically, CD-ROM databases and reprint file database management programs--new cost-effective procedures can be developed. This paper describes a recent multidisciplinary study conducted by two library faculty members and one allied health faculty member to test a bibliometric method that used the MEDLINE and CINAHL databases on CD-ROM and the Papyrus database management program to produce a new collection development methodology. PMID:1600424

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Site-Specific Pre-Swelling-Directed Morphing Structures of Patterned Hydrogels.

PubMed

Wang, Zhi Jian; Hong, Wei; Wu, Zi Liang; Zheng, Qiang

2017-12-11

Morphing materials have promising applications in various fields, yet how to program the self-shaping process for specific configurations remains a challenge. Herein we show a versatile approach to control the buckling of individual domains and thus the outcome configurations of planar-patterned hydrogels. By photolithography, high-swelling disc gels were positioned in a non-swelling gel sheet; the swelling mismatch resulted in out-of-plain buckling of the disc gels. To locally control the buckling direction, masks with holes were used to guide site-specific swelling of the high-swelling gel under the holes, which built a transient through-thickness gradient and thus directed the buckling during the subsequent unmasked swelling process. Therefore, various configurations of an identical patterned hydrogel can be programmed by the pre-swelling step with different masks to encode the buckling directions of separate domains. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-and low-affinity binding sites for Cd on the bacterial cell walls of Bacillus subtilis and Shewanella oneidensis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, B.; Boyanov, M.; Bunker, B. A.

2010-08-01

Bulk Cd adsorption isotherm experiments, thermodynamic equilibrium modeling, and Cd K edge EXAFS were used to constrain the mechanisms of proton and Cd adsorption to bacterial cells of the commonly occurring Gram-positive and Gram-negative bacteria, Bacillus subtilis and Shewanella oneidensis, respectively. Potentiometric titrations were used to characterize the functional group reactivity of the S. oneidensis cells, and we model the titration data using the same type of non-electrostatic surface complexation approach as was applied to titrations of B. subtilis suspensions by Fein et al. (2005). Similar to the results for B. subtilis, the S. oneidensis cells exhibit buffering behavior frommore » approximately pH 3-9 that requires the presence of four distinct sites, with pK{sub a} values of 3.3 {+-} 0.2, 4.8 {+-} 0.2, 6.7 {+-} 0.4, and 9.4 {+-} 0.5, and site concentrations of 8.9({+-}2.6) x 10{sup -5}, 1.3({+-}0.2) x 10{sup -4}, 5.9({+-}3.3) x 10{sup -5}, and 1.1({+-}0.6) x 10{sup -4} moles/g bacteria (wet mass), respectively. The bulk Cd isotherm adsorption data for both species, conducted at pH 5.9 as a function of Cd concentration at a fixed biomass concentration, were best modeled by reactions with a Cd:site stoichiometry of 1:1. EXAFS data were collected for both bacterial species as a function of Cd concentration at pH 5.9 and 10 g/L bacteria. The EXAFS results show that the same types of binding sites are responsible for Cd sorption to both bacterial species at all Cd loadings tested (1-200 ppm). Carboxyl sites are responsible for the binding at intermediate Cd loadings. Phosphoryl ligands are more important than carboxyl ligands for Cd binding at high Cd loadings. For the lowest Cd loadings studied here, a sulfhydryl site was found to dominate the bound Cd budgets for both species, in addition to the carboxyl and phosphoryl sites that dominate the higher loadings. The EXAFS results suggest that both Gram-positive and Gram-negative bacterial cell walls have a low concentration of very high-affinity sulfhydryl sites which become masked by the more abundant carboxyl and phosphoryl sites at higher metal:bacteria ratios. This study demonstrates that metal loading plays a vital role in determining the important metal-binding reactions that occur on bacterial cell walls, and that high affinity, low-density sites can be revealed by spectroscopy of biomass samples. Such sites may control the fate and transport of metals in realistic geologic settings, where metal concentrations are low.« less

Lidar Cloud Detection with Fully Convolutional Networks

NASA Astrophysics Data System (ADS)

Cromwell, E.; Flynn, D.

2017-12-01

The vertical distribution of clouds from active remote sensing instrumentation is a widely used data product from global atmospheric measuring sites. The presence of clouds can be expressed as a binary cloud mask and is a primary input for climate modeling efforts and cloud formation studies. Current cloud detection algorithms producing these masks do not accurately identify the cloud boundaries and tend to oversample or over-represent the cloud. This translates as uncertainty for assessing the radiative impact of clouds and tracking changes in cloud climatologies. The Atmospheric Radiation Measurement (ARM) program has over 20 years of micro-pulse lidar (MPL) and High Spectral Resolution Lidar (HSRL) instrument data and companion automated cloud mask product at the mid-latitude Southern Great Plains (SGP) and the polar North Slope of Alaska (NSA) atmospheric observatory. Using this data, we train a fully convolutional network (FCN) with semi-supervised learning to segment lidar imagery into geometric time-height cloud locations for the SGP site and MPL instrument. We then use transfer learning to train a FCN for (1) the MPL instrument at the NSA site and (2) for the HSRL. In our semi-supervised approach, we pre-train the classification layers of the FCN with weakly labeled lidar data. Then, we facilitate end-to-end unsupervised pre-training and transition to fully supervised learning with ground truth labeled data. Our goal is to improve the cloud mask accuracy and precision for the MPL instrument to 95% and 80%, respectively, compared to the current cloud mask algorithms of 89% and 50%. For the transfer learning based FCN for the HSRL instrument, our goal is to achieve a cloud mask accuracy of 90% and a precision of 80%.

SHIELD: FITGALAXY -- A Software Package for Automatic Aperture Photometry of Extended Sources

NASA Astrophysics Data System (ADS)

Marshall, Melissa

2013-01-01

Determining the parameters of extended sources, such as galaxies, is a common but time-consuming task. Finding a photometric aperture that encompasses the majority of the flux of a source and identifying and excluding contaminating objects is often done by hand - a lengthy and difficult to reproduce process. To make extracting information from large data sets both quick and repeatable, I have developed a program called FITGALAXY, written in IDL. This program uses minimal user input to automatically fit an aperture to, and perform aperture and surface photometry on, an extended source. FITGALAXY also automatically traces the outlines of surface brightness thresholds and creates surface brightness profiles, which can then be used to determine the radial properties of a source. Finally, the program performs automatic masking of contaminating sources. Masks and apertures can be applied to multiple images (regardless of the WCS solution or plate scale) in order to accurately measure the same source at different wavelengths. I present the fluxes, as measured by the program, of a selection of galaxies from the Local Volume Legacy Survey. I then compare these results with the fluxes given by Dale et al. (2009) in order to assess the accuracy of FITGALAXY.

[The development of educational CD-program for obesity prevention and management for primary school students].

PubMed

Kim, Yi-Soon; Ju, Hyeon-Ok; Song, Mi-Gyoung; Shin, Yoo-Sun

2003-02-01

The study is designed to develop an educational CD-Program for prevention and control of obesity among primary school students. The study is conducted from June 15, 2000 to April 15, 2002. Based on the course of program development suggested by Dick and Cray (1990), the study followed the planning, development, education and evaluation of a program. The developed CD-Program consists 2 parts each for lower and higher grades of primary school students. The introduction part of the first trial for lower grade students uses quiz to encourage their motivations, the body proceeds with motion pictures and animations to trigger their interests. The introduction part of the second trial for the lower grades consists of remembering the exhibition lecture. The first trial for higher grades of primary school students builds on the contents of the low grades. Its body part, how to determine obesity and calculate ones own obesity, puts ones own weight and height in by the mouse. For the second trial of the higher grades, the body consists of life-style, diet, and regiments. The merits of this CD-Program are that to be possible an interaction between teachers and students.

Masking in reports of "most serious" events: bias in estimators of sports injury incidence in Canadian children.

PubMed

Gupta, A; Davidson, C M; McIsaac, M A

2016-08-01

Surveys that collect information on injuries often focus on the single "most serious" event to help limit recall error and reduce survey length. However, this can mask less serious injuries and result in biased incidence estimates for specific injury subcategories. Data from the 2002 Health Behaviour in School-aged Children (HBSC) survey and from the Canadian Hospitals Injury Reporting and Prevention Program (CHIRPP) were used to compare estimates of sports injury incidence in Canadian children. HBSC data indicate that 6.7% of children report sustaining a sports injury that required an emergency department (ED) visit. However, details were only collected on a child's "most serious" injury, so children who had multiple injuries requiring an ED visit may have had sports injuries that went unreported. The rate of 6.7% can be seen to be an underestimate by as much as 4.3%. Corresponding CHIRPP surveillance data indicate an incidence of 9.9%. Potential masking bias is also highlighted in our analysis of injuries attended by other health care providers. The "one most serious injury" line of questioning induces potentially substantial masking bias in the estimation of sports injury incidence, which limits researchers' ability to quantify the burden of sports injury. Longer survey recall periods naturally lead to greater masking. The design of future surveys should take these issues into account. In order to accurately inform policy decisions and the direction of future research, researchers must be aware of these limitations.

READING and FEELING: the effects of a literature-based intervention designed to increase emotional competence in second and third graders

PubMed Central

Kumschick, Irina R.; Beck, Luna; Eid, Michael; Witte, Georg; Klann-Delius, Gisela; Heuser, Isabella; Steinlein, Rüdiger; Menninghaus, Winfried

2014-01-01

Emotional competence has an important influence on development in school. We hypothesized that reading and discussing children’s books with emotional content increases children’s emotional competence. To examine this assumption, we developed a literature-based intervention, named READING and FEELING, and tested it on 104 second and third graders in their after-school care center. Children who attended the same care center but did not participate in the emotion-centered literary program formed the control group (n = 104). Our goal was to promote emotional competence and to evaluate the effectiveness of the READING and FEELING program. Emotional competence variables were measured prior to the intervention and 9 weeks later, at the end of the program. Results revealed significant improvements in the emotional vocabulary, explicit emotional knowledge, and recognition of masked feelings. Regarding the treatment effect for detecting masked feelings, we found that boys benefited significantly more than girls. These findings underscore the assumption that children’s literature is an appropriate vehicle to support the development of emotional competence in middle childhood. PMID:25566129

NiCd battery electrodes

NASA Technical Reports Server (NTRS)

Holleck, G.; Turchan, M.; Hopkins, J.

1972-01-01

The objective of this research program was to develop and evaluate electrodes for a negative limited nickel-cadmium cell and to prove its feasibility. The program consisted of three phases: (1) the development of cadmium electrodes with high hydrogen overvoltage characteristics, (2) the testing of positive and negative plates, and (3) the fabrication and testing of complete negative limited NiCd cells. The following electrode structures were manufactured and their physical and electrochemical characteristics were evaluated: (1) silver sinter-based Cd electrodes, (2) Teflon-bonded Cd electrodes, (3) electrodeposited Cd sponge, and (4) Cd-sinter structures. All cadmium electrode structures showed a sharp increase in potential at the end of charge, with the advent of hydrogen evolution occurring at approximately -1.3 V versus Hg/HgO. The hydrogen advent potentials on pure cadmium structures were 50 to 70 mV more cathodic than those of their silver-containing counterparts.

Using and Developing with CD-Interactive: Frequently Asked Questions Are Answered.

ERIC Educational Resources Information Center

Lediaev, Lucy; van Sonderen, Lex

1994-01-01

Discusses Compact Disc-Interactive (CD-I) using a question-and-answer format. Highlights include development of the CD-I technology; where to purchase discs and players; compatibility with other CD-ROM drives; how to make discs; authoring systems versus custom programs; entertainment and educational applications; licensing issues; specifications;…

Human memory CD8 T cell effector potential is epigenetically preserved during in vivo homeostasis.

PubMed

Abdelsamed, Hossam A; Moustaki, Ardiana; Fan, Yiping; Dogra, Pranay; Ghoneim, Hazem E; Zebley, Caitlin C; Triplett, Brandon M; Sekaly, Rafick-Pierre; Youngblood, Ben

2017-06-05

Antigen-independent homeostasis of memory CD8 T cells is vital for sustaining long-lived T cell-mediated immunity. In this study, we report that maintenance of human memory CD8 T cell effector potential during in vitro and in vivo homeostatic proliferation is coupled to preservation of acquired DNA methylation programs. Whole-genome bisulfite sequencing of primary human naive, short-lived effector memory (T EM ), and longer-lived central memory (T CM ) and stem cell memory (T SCM ) CD8 T cells identified effector molecules with demethylated promoters and poised for expression. Effector-loci demethylation was heritably preserved during IL-7- and IL-15-mediated in vitro cell proliferation. Conversely, cytokine-driven proliferation of T CM and T SCM memory cells resulted in phenotypic conversion into T EM cells and was coupled to increased methylation of the CCR7 and Tcf7 loci. Furthermore, haploidentical donor memory CD8 T cells undergoing in vivo proliferation in lymphodepleted recipients also maintained their effector-associated demethylated status but acquired T EM -associated programs. These data demonstrate that effector-associated epigenetic programs are preserved during cytokine-driven subset interconversion of human memory CD8 T cells. © 2017 Abdelsamed et al.

Vitamin D increases programmed death receptor-1 expression in Crohn’s disease

PubMed Central

Bendix, Mia; Greisen, Stinne; Dige, Anders; Hvas, Christian L.; Bak, Nina; Jørgensen, Søren P.; Dahlerup, Jens F.; Deleuran, Bent; Agnholt, Jørgen

2017-01-01

Background: Vitamin D modulates inflammation in Crohns disease (CD). Programmed death (PD)-1 receptor contributes to the maintenance of immune tolerance. Vitamin D might modulate PD-1 signalling in CD. Aim: To investigate PD-1 expression on T cell subsets in CD patients treated with vitamin D or placebo. Methods: We included 40 CD patients who received 1200 IU vitamin D3 for 26 weeks or placebo and eight healthy controls. Peripheral blood mononuclear cells (PBMCs) and plasma were isolated at baseline and week 26. The expressions of PD-1, PD-L1, and surface activation markers were analysed by flow cytometry. Soluble PD-1 plasma levels were measured by ELISA. Results: PD-1 expression upon T cell stimulation was increased in CD4+CD25+int T cells in vitamin D treated CD patients from 19% (range 10 39%) to 29% (11 79%)(p = 0.03) compared with placebo-treated patients. Vitamin D treatment, but not placebo, decreased the expression of the T cell activation marker CD69 from 42% (31 62%) to 33% (19 - 54%)(p = 0.01). Soluble PD-1 levels were not influenced by vitamin D treatment. Conclusions: Vitamin D treatment increases CD4+CD25+int T cells ability to up-regulate PD-1 in response to activation and reduces the CD69 expression in CD patients. PMID:28412753

Atmosphere, Magnetosphere and Plasmas in Space (AMPS). Spacelab payload definition study. Volume 7, book 2: AMPS phase C/D analysis and planning document

NASA Technical Reports Server (NTRS)

1976-01-01

The results are presented of the AMPS Phase C/D (Design, Development, and Operations) program analysis and planning effort. Cost and schedule estimates are included. Although the AMPS program has been specifically addressed, these task descriptions are basically adaptable to a broader-based program incorporating additional or different Spacelab/orbiter payloads.

CD-ROMs review 1995-1997: a multicentre pilot trial.

PubMed

Grey-Lloyd, J

1998-03-01

This article describes an evaluation of CD-ROMs carried out at four NHS Trust Libraries in Wales. It covers interactive CD-ROMs which take the form of either computer assisted learning programs, encyclopaedia or well-known text books.

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

NASA Astrophysics Data System (ADS)

Westerhout, R. J.; Musca, C. A.; Antoszewski, J.; Dell, J. M.; Faraone, L.

2007-08-01

In this work, gated midwave infrared (MWIR) Hg1 x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 × 1016 cm-3 and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1 5 × 104 Ωcm2 with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 × 106 Ωcm2, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = α I β f -0.5 trend was observed above 200 pA reverse bias dark current, with α = 3.5 × 10-5 and β = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.

Synthesis of single- and double-chain fluorocarbon and hydrocarbon galactosyl amphiphiles and their anti-HIV-1 activity.

PubMed

Faroux-Corlay, B; Clary, L; Gadras, C; Hammache, D; Greiner, J; Santaella, C; Aubertin, A M; Vierling, P; Fantini, J

2000-07-24

Galactosylceramide (GalCer) is an alternative receptor allowing HIV-1 entry into CD4(-)/GalCer(+) cells. This glycosphingolipid recognizes the V3 loop of HIV gp120, which plays a key role in the fusion of the HIV envelope and cellular membrane. To inhibit HIV uptake and infection, we designed and synthesized analogs of GalCer. These amphiphiles and bolaamphiphiles consist of single and double hydrocarbon and/or fluorocarbon chain beta-linked to galactose and galactosamine. They derive from serine (GalSer), cysteine (GalCys), and ethanolamine (GalAE). The anti-HIV activity and cytotoxicity of these galactolipids were evaluated in vitro on CEM-SS (a CD4(+) cell line), HT-29, a CD4(-) cell line expressing high levels of GalCer receptor, and/or HT29 genetically modified to express CD4. GalSer and GalAE derivatives, tested in aqueous medium or as part of liposome preparation, showed moderate anti-HIV-1 activities (IC50 in the 20-220 microM range), whereas none of the GalCys derivatives was found to be active. Moreover, only some of these anti-HIV active analogs inhibited the binding of [3H]suramin (a polysulfonyl compound which displays a high affinity for the V3 loop) to SPC3, a synthetic peptide which contains the conserved GPGRAF region of the V3 loop. Our results most likely indicate that the neutralization of the virion through masking of this conserved V3 loop region is not the only mechanism involved in the HIV-1 antiviral activity of our GalCer analogs.

Apparatus and method to achieve high-resolution microscopy with non-diffracting or refracting radiation

DOEpatents

Tobin, Jr., Kenneth W.; Bingham, Philip R.; Hawari, Ayman I.

2012-11-06

An imaging system employing a coded aperture mask having multiple pinholes is provided. The coded aperture mask is placed at a radiation source to pass the radiation through. The radiation impinges on, and passes through an object, which alters the radiation by absorption and/or scattering. Upon passing through the object, the radiation is detected at a detector plane to form an encoded image, which includes information on the absorption and/or scattering caused by the material and structural attributes of the object. The encoded image is decoded to provide a reconstructed image of the object. Because the coded aperture mask includes multiple pinholes, the radiation intensity is greater than a comparable system employing a single pinhole, thereby enabling a higher resolution. Further, the decoding of the encoded image can be performed to generate multiple images of the object at different distances from the detector plane. Methods and programs for operating the imaging system are also disclosed.

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Intermittent photocatalytic activity of single CdS nanoparticles

PubMed Central

Li, Zhimin; Jiang, Yingyan; Wang, Xian; Chen, Hong-Yuan; Tao, Nongjian; Wang, Wei

2017-01-01

Semiconductor photocatalysis holds promising keys to address various energy and environmental challenges. Most studies to date are based on ensemble analysis, which may mask critical photocatalytic kinetics in single nanocatalysts. Here we report a study of imaging photocatalytic hydrogen production of single CdS nanoparticles with a plasmonic microscopy in an in operando manner. Surprisingly, we find that the photocatalytic reaction switches on and off stochastically despite the fact that the illumination is kept constant. The on and off states follow truncated and full-scale power-law distributions in broad time scales spanning 3–4 orders of magnitude, respectively, which can be described with a statistical model involving stochastic reactions rates at multiple active sites. This phenomenon is analogous to fluorescence photoblinking, but the underlying mechanism is different. As individual nanocatalyst represents the elementary photocatalytic platform, the discovery of the intermittent nature of the photocatalysis provides insights into the fundamental photochemistry and photophysics of semiconductor nanomaterials, which is anticipated to substantially benefit broad application fields such as clean energy, pollution treatment, and chemical synthesis. PMID:28923941

Education Statistics on Disk. [CD-ROM.

ERIC Educational Resources Information Center

National Center for Education Statistics (ED), Washington, DC.

This CD-ROM disk contains a computer program developed by the Office of Educational Research and Improvement to provide convenient access to the wealth of education statistics published by the National Center for Education Statistics (NCES). The program contains over 1,800 tables, charts, and text files from the following NCES publications,…

Energy-Smart Choices for Schools. An HVAC Comparison Tool. [CD-ROM].

ERIC Educational Resources Information Center

Geothermal Heat Pump Consortium, Inc., Washington, DC.

A CD ROM program provides comparison construction cost capabilities for heating, ventilation, and air conditioning (HVAC) systems in educational facilities. The program combines multiple types of systems with square footage data on low and high construction cost and school size to automatically calculate HVAC comparative construction costs. (GR)

Human-specific bacterial pore-forming toxins induce programmed necrosis in erythrocytes.

PubMed

LaRocca, Timothy J; Stivison, Elizabeth A; Hod, Eldad A; Spitalnik, Steven L; Cowan, Peter J; Randis, Tara M; Ratner, Adam J

2014-08-26

A subgroup of the cholesterol-dependent cytolysin (CDC) family of pore-forming toxins (PFTs) has an unusually narrow host range due to a requirement for binding to human CD59 (hCD59), a glycosylphosphatidylinositol (GPI)-linked complement regulatory molecule. hCD59-specific CDCs are produced by several organisms that inhabit human mucosal surfaces and can act as pathogens, including Gardnerella vaginalis and Streptococcus intermedius. The consequences and potential selective advantages of such PFT host limitation have remained unknown. Here, we demonstrate that, in addition to species restriction, PFT ligation of hCD59 triggers a previously unrecognized pathway for programmed necrosis in primary erythrocytes (red blood cells [RBCs]) from humans and transgenic mice expressing hCD59. Because they lack nuclei and mitochondria, RBCs have typically been thought to possess limited capacity to undergo programmed cell death. RBC programmed necrosis shares key molecular factors with nucleated cell necroptosis, including dependence on Fas/FasL signaling and RIP1 phosphorylation, necrosome assembly, and restriction by caspase-8. Death due to programmed necrosis in RBCs is executed by acid sphingomyelinase-dependent ceramide formation, NADPH oxidase- and iron-dependent reactive oxygen species formation, and glycolytic formation of advanced glycation end products. Bacterial PFTs that are hCD59 independent do not induce RBC programmed necrosis. RBC programmed necrosis is biochemically distinct from eryptosis, the only other known programmed cell death pathway in mature RBCs. Importantly, RBC programmed necrosis enhances the growth of PFT-producing pathogens during exposure to primary RBCs, consistent with a role for such signaling in microbial growth and pathogenesis. In this work, we provide the first description of a new form of programmed cell death in erythrocytes (RBCs) that occurs as a consequence of cellular attack by human-specific bacterial toxins. By defining a new RBC death pathway that shares important components with necroptosis, a programmed necrosis module that occurs in nucleated cells, these findings expand our understanding of RBC biology and RBC-pathogen interactions. In addition, our work provides a link between cholesterol-dependent cytolysin (CDC) host restriction and promotion of bacterial growth in the presence of RBCs, which may provide a selective advantage to human-associated bacterial strains that elaborate such toxins and a potential explanation for the narrowing of host range observed in this toxin family. Copyright © 2014 LaRocca et al.

Isolation and measurement of the features of arrays of cell aggregates formed by dielectrophoresis using the user-specified Multi Regions Masking (MRM) technique

NASA Astrophysics Data System (ADS)

Yusvana, Rama; Headon, Denis; Markx, Gerard H.

2009-08-01

The use of dielectrophoresis for the construction of artificial skin tissue with skin cells in follicle-like 3D cell aggregates in well-defined patterns is demonstrated. To analyse the patterns produced and to study their development after their formation a Virtual Instrument (VI) system was developed using the LabVIEW IMAQ Vision Development Module. A series of programming functions (algorithms) was used to isolate the features on the image (in our case; the patterned aggregates) and separate them from all other unwanted regions on the image. The image was subsequently converted into a binary version, covering only the desired microarray regions which could then be analysed by computer for automatic object measurements. The analysis utilized the simple and easy-to-use User-Specified Multi-Regions Masking (MRM) technique, which allows one to concentrate the analysis on the desired regions specified in the mask. This simplified the algorithms for the analysis of images of cell arrays having similar geometrical properties. By having a collection of scripts containing masks of different patterns, it was possible to quickly and efficiently develop sets of custom virtual instruments for the offline or online analysis of images of cell arrays in the database.

Across-site patterns of modulation detection: Relation to speech recognitiona)

PubMed Central

Garadat, Soha N.; Zwolan, Teresa A.; Pfingst, Bryan E.

2012-01-01

The aim of this study was to identify across-site patterns of modulation detection thresholds (MDTs) in subjects with cochlear implants and to determine if removal of sites with the poorest MDTs from speech processor programs would result in improved speech recognition. Five hundred millisecond trains of symmetric-biphasic pulses were modulated sinusoidally at 10 Hz and presented at a rate of 900 pps using monopolar stimulation. Subjects were asked to discriminate a modulated pulse train from an unmodulated pulse train for all electrodes in quiet and in the presence of an interleaved unmodulated masker presented on the adjacent site. Across-site patterns of masked MDTs were then used to construct two 10-channel MAPs such that one MAP consisted of sites with the best masked MDTs and the other MAP consisted of sites with the worst masked MDTs. Subjects’ speech recognition skills were compared when they used these two different MAPs. Results showed that MDTs were variable across sites and were elevated in the presence of a masker by various amounts across sites. Better speech recognition was observed when the processor MAP consisted of sites with best masked MDTs, suggesting that temporal modulation sensitivity has important contributions to speech recognition with a cochlear implant. PMID:22559376

Lensless digital holography with diffuse illumination through a pseudo-random phase mask.

PubMed

Bernet, Stefan; Harm, Walter; Jesacher, Alexander; Ritsch-Marte, Monika

2011-12-05

Microscopic imaging with a setup consisting of a pseudo-random phase mask, and an open CMOS camera, without an imaging objective, is demonstrated. The pseudo random phase mask acts as a diffuser for an incoming laser beam, scattering a speckle pattern to a CMOS chip, which is recorded once as a reference. A sample which is afterwards inserted somewhere in the optical beam path changes the speckle pattern. A single (non-iterative) image processing step, comparing the modified speckle pattern with the previously recorded one, generates a sharp image of the sample. After a first calibration the method works in real-time and allows quantitative imaging of complex (amplitude and phase) samples in an extended three-dimensional volume. Since no lenses are used, the method is free from lens abberations. Compared to standard inline holography the diffuse sample illumination improves the axial sectioning capability by increasing the effective numerical aperture in the illumination path, and it suppresses the undesired so-called twin images. For demonstration, a high resolution spatial light modulator (SLM) is programmed to act as the pseudo-random phase mask. We show experimental results, imaging microscopic biological samples, e.g. insects, within an extended volume at a distance of 15 cm with a transverse and longitudinal resolution of about 60 μm and 400 μm, respectively.

CO-CD base management model of Universitas Terbuka community service program

NASA Astrophysics Data System (ADS)

Kridasakti, S. W.; Sudirah; Siregar, H.

2018-03-01

These studies were to respond whether the UT social-aid management had been executed under CO-CD principles (Ife J. 1995) and what CO-CD base community service management model can be built. The goals of these evaluational studies were UT social-aid managerial performance profile (2011-2013) and CO-CD management model development. The methods used were Survey and FGD. For data collection were involving the UT officers, the counterparts, and the documents. The analysis used combination between the Performance Analysis (Irawan P., 2003) and the CIPP (Stuffelbeam, D, L., & Shinkfield, A, J., 1985). The findings showed that the quantitative targeting in program completion was credible in achievement (85%). However, the “qulitative targeting” of the management goals was indicating far from a good-stage (≤5.0_Interval-Force: 1-10 Scale). The “Gap” was due to the absent of socialization_needs-analysis_maintenance_release factors on the UT social-service grand-policy. The trial of CO-CD Base Management Model had been imposed to the community that turned out to be very effective to self-help, and the ensuing SOP had been successfully defined. Conclusion, ‘CO-CD Principles’ were not designed in UT community service programs management. However, if efficiency and effectivity likely to be achieved, the SOP of ‘CO-CD Base Management Model has to be adopted.

Phase C/D program development plan. Volume 1: Program plan

NASA Technical Reports Server (NTRS)

1971-01-01

The Phase C/D definition of the Modular Space Station has been developed. The modular approach selected during the option period was evaluated, requirements were defined, and program definition and preliminary design were accomplished. The Space Station Project is covered in depth, the research applications module is limited to a project-level definition, and the shuttle operations are included for interface requirements identification, scheduling, and costing. Discussed in detail are: (1) baseline program and project descriptions; (2) phase project planning; (3) modular space station program schedule; (4) program management plan; (5) operations; (6) facilities; (7) logistics; and (8) manpower.

Dendritic Cells Program Non-Immunogenic Prostate-Specific T Cell Responses Beginning at Early Stages of Prostate Tumorigenesis

PubMed Central

Mihalyo, Marianne A.; Hagymasi, Adam T.; Slaiby, Aaron M.; Nevius, Erin E.; Adler, Adam J.

2010-01-01

BACKGROUND Prostate cancer promotes the development of T cell tolerance towards prostatic antigens, potentially limiting the efficacy of prostate cancer vaccines targeting these antigens. Here, we sought to determine the stage of disease progression when T cell tolerance develops, as well as the role of steady state dendritic cells (DC) and CD4+CD25+ T regulatory cells (Tregs) in programming tolerance. METHODS The response of naïve HA-specific CD4+ T cells were analyzed following adoptive transfer into Pro-HA × TRAMP transgenic mice harboring variably-staged HA-expressing prostate tumors on two genetic backgrounds that display different patterns and kinetics of tumorigenesis. The role of DC and Tregs in programming HA-specific CD4 cell responses were assessed via depletion. RESULTS HA-specific CD4 cells underwent non-immunogenic responses at all stages of tumorigenesis in both genetic backgrounds. These responses were completely dependent on DC, but not appreciably influenced by Tregs. CONCLUSIONS These results suggest that tolerogenicity is an early and general property of prostate tumors. PMID:17221844

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

ILT optimization of EUV masks for sub-7nm lithography

NASA Astrophysics Data System (ADS)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

Computer-assisted uncertainty assessment of k0-NAA measurement results

NASA Astrophysics Data System (ADS)

Bučar, T.; Smodiš, B.

2008-10-01

In quantifying measurement uncertainty of measurement results obtained by the k0-based neutron activation analysis ( k0-NAA), a number of parameters should be considered and appropriately combined in deriving the final budget. To facilitate this process, a program ERON (ERror propagatiON) was developed, which computes uncertainty propagation factors from the relevant formulae and calculates the combined uncertainty. The program calculates uncertainty of the final result—mass fraction of an element in the measured sample—taking into account the relevant neutron flux parameters such as α and f, including their uncertainties. Nuclear parameters and their uncertainties are taken from the IUPAC database (V.P. Kolotov and F. De Corte, Compilation of k0 and related data for NAA). Furthermore, the program allows for uncertainty calculations of the measured parameters needed in k0-NAA: α (determined with either the Cd-ratio or the Cd-covered multi-monitor method), f (using the Cd-ratio or the bare method), Q0 (using the Cd-ratio or internal comparator method) and k0 (using the Cd-ratio, internal comparator or the Cd subtraction method). The results of calculations can be printed or exported to text or MS Excel format for further analysis. Special care was taken to make the calculation engine portable by having possibility of its incorporation into other applications (e.g., DLL and WWW server). Theoretical basis and the program are described in detail, and typical results obtained under real measurement conditions are presented.

Fin field effect transistor directionality impacts printing of implantation shapes

NASA Astrophysics Data System (ADS)

Wang, Xiren; Granik, Yuri

2018-01-01

In modern integrated circuit (IC) fabrication processes, the photoresist receives considerable illumination energy that is reflected by underlying topography during optical lithography of implantation layers. Bottom antireflective coating (BARC) is helpful to mitigate the reflection. Often, however, BARC is not used, because its removal is technically challenging, in addition to its relatively high economic cost. Furthermore, the advanced technology nodes, such as 14/10-nm nodes, have introduced fin field effect transistor (FinFET), which makes reflection from nonuniform silicon substrates exceptionally complicated. Therefore, modeling reflection from topography becomes obligatory to accurately predict printing of implantation shapes. Typically, FinFET is always fixed in one direction in realistic designs. However, the same implantation rectangle may be oriented in either horizontal or vertical direction. Then, there are two types of relations between the critical dimension (CD) and FinFET, namely a parallel-to and a perpendicular-to relation. We examine the fin directionality impact on CD. We found that this impact may be considerable in some cases. We use our in-house rigorous optical topography simulator to reveal underlining physical reasons. One of the major causes of the CD differences is that in the parallel orientation, the solid sidewalls of the fins conduct considerable light reflections unlike for the perpendicular orientation. This finding can aid the compact modeling in optical proximity correction of implantation masks.

Archive of mass spectral data files on recordable CD-ROMs and creation and maintenance of a searchable computerized database.

PubMed

Amick, G D

1999-01-01

A database containing names of mass spectral data files generated in a forensic toxicology laboratory and two Microsoft Visual Basic programs to maintain and search this database is described. The data files (approximately 0.5 KB/each) were collected from six mass spectrometers during routine casework. Data files were archived on 650 MB (74 min) recordable CD-ROMs. Each recordable CD-ROM was given a unique name, and its list of data file names was placed into the database. The present manuscript describes the use of search and maintenance programs for searching and routine upkeep of the database and creation of CD-ROMs for archiving of data files.

Do Memory CD4 T Cells Keep Their Cell-Type Programming: Plasticity versus Fate Commitment? Epigenome: A Dynamic Vehicle for Transmitting and Recording Cytokine Signaling.

PubMed

Johnson, John L; Vahedi, Golnaz

2018-03-01

CD4 + T cells are critical for the elimination of an immense array of microbial pathogens. Although there are aspects of helper T-cell differentiation that can be modeled as a classic cell-fate commitment, CD4 + T cells also maintain considerable flexibility in their transcriptional program. Here, we present an overview of chromatin biology during cellular reprogramming and, within this context, envision how the scope of cellular reprogramming may be expanded to further our understanding of the controversy surrounding CD4 + T lymphocyte plasticity or determinism. Copyright © 2018 Cold Spring Harbor Laboratory Press; all rights reserved.

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

BUY CLEAN MANUAL INTERACTIVE CD-ROM

EPA Science Inventory

This interactive CD-ROM contains exercises and opportunities to help users develop a Buy Clean Program for janitorial cleaning products. CD users can learn about Material Safety Data Sheets (MSDS), complete an inventory list, and compare cleaning products to see which have the le...

Rapid point-of-care CD4 testing at mobile HIV testing sites to increase linkage to care: an evaluation of a pilot program in South Africa.

PubMed

Larson, Bruce A; Schnippel, Kathryn; Ndibongo, Buyiswa; Xulu, Thembisile; Brennan, Alana; Long, Lawrence; Fox, Matthew P; Rosen, Sydney

2012-10-01

A mobile HIV counseling and testing (HCT) program around Johannesburg piloted the integration of point-of-care (POC) CD4 testing, using the Pima analyzer, to improve linkages to HIV care. We report results from this pilot program for patients testing positive (n = 508) from May to October 2010. We analyzed 3 primary outcomes: assignment to testing group (offered POC CD4 or not), successful follow-up (by telephone), and completed the referral visit for HIV care within 8 weeks after HIV testing if successfully followed up. Proportions for each outcome were calculated, and relative risks were estimated using a modified Poisson approach. Three hundred eleven patients were offered the POC CD4 test, and 197 patients were not offered the test. No differences in patient characteristics were observed between the 2 groups. Approximately 62.7% of patients were successfully followed up 8 weeks after HIV testing, with no differences observed between testing groups. Among those followed up, 54.4% reported completing their referral visit. Patients offered the POC CD4 test were more likely to complete the referral visit for further HIV care (relative risk 1.25, 95% confidence interval: 1.00 to 1.57). In this mobile HCT setting, patients offered POC CD4 testing as part of the HCT services were more likely to visit a referral clinic after testing, suggesting that rapid CD4 testing technology may improve linkage to HIV care. Future research can evaluate options for adjusting HCT services if POC CD4 testing was included permanently and the cost-effectiveness of the POC CD4 testing compared with other approaches for improving linkage of care.

Challenges of anamorphic high-NA lithography and mask making

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative `attenuated SRAF' to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in `Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

What's in a mask? Information masking with forward and backward visual masks.

PubMed

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

Nitric oxide modulates cadmium influx during cadmium-induced programmed cell death in tobacco BY-2 cells.

PubMed

Ma, Wenwen; Xu, Wenzhong; Xu, Hua; Chen, Yanshan; He, Zhenyan; Ma, Mi

2010-07-01

Nitric oxide (NO) is a bioactive gas and functions as a signaling molecule in plants exposed to diverse biotic and abiotic stresses including cadmium (Cd(2+)). Cd(2+) is a non-essential and toxic heavy metal, which has been reported to induce programmed cell death (PCD) in plants. Here, we investigated the role of NO in Cd(2+)-induced PCD in tobacco BY-2 cells (Nicotiana tabacum L. cv. Bright Yellow 2). In this work, BY-2 cells exposed to 150 microM CdCl(2) underwent PCD with TUNEL-positive nuclei, significant chromatin condensation and the increasing expression of a PCD-related gene Hsr203J. Accompanied with the occurring of PCD, the production of NO increased significantly. The supplement of NO by sodium nitroprusside (SNP) had accelerated the PCD, whereas the NO synthase inhibitor Nomega-nitro-L-arginine methyl ester hydrochloride (L-NAME) and NO-specific scavenger 2-(4-carboxyphenyl)-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (cPTIO) alleviated this toxicity. To investigate the mechanism by which NO exerted its function, Cd(2+) concentration was measured subsequently. SNP led more Cd(2+) content than Cd(2+) treatment alone. By contrast, the prevention of NO by L-NAME decreased Cd(2+) accumulation. Using the scanning ion-selective electrode technique, we analyzed the pattern and rate of Cd(2+) fluxes. This analysis revealed the promotion of Cd(2+) influxes into cells by application of SNP, while L-NAME and cPTIO reduced the rate of Cd(2+) uptake or even resulted in net Cd(2+) efflux. Based on these founding, we concluded that NO played a positive role in CdCl(2)-induced PCD by modulating Cd(2+) uptake and thus promoting Cd(2+) accumulation in BY-2 cells.

Divergent response profile in activated cord blood T cells from first-born child implies birth-order-associated in utero immune programming.

PubMed

Kragh, M; Larsen, J M; Thysen, A H; Rasmussen, M A; Wolsk, H M; Bisgaard, H; Brix, S

2016-03-01

First-born children are at higher risk of developing a range of immune-mediated diseases. The underlying mechanism of 'birth-order effects' on disease risk is largely unknown, but in utero programming of the child's immune system may play a role. We studied the association between birth order and the functional response of stimulated cord blood T cells. Purified cord blood T cells were polyclonally activated with anti-CD3-/anti-CD28-coated beads in a subgroup of 28 children enrolled in the COPSAC2010 birth cohort. Expression levels of seven activation markers on helper and cytotoxic T cells as well as the percentage of CD4(+) CD25(+) T cells were assessed by flow cytometry. Production of IFN-γ, TNF-α, IL-17, IL-4, IL-5, IL-13, and IL-10 was measured in the supernatants. IL-10 secretion (P = 0.007) and CD25 expression on CD4(+) helper T cells (P = 0.0003) in the activated cord blood T cells were selectively reduced in first-born children, while the percentage of circulating CD4(+) CD25(+) cord blood T cells was independent of birth order. First-born infants display a reduced anti-inflammatory profile in T cells at birth. This possible in utero 'birth-order' T-cell programming may contribute to later development of immune-mediated diseases by increasing overall immune reactivity in first-born children as compared to younger siblings. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Zone leveling and solution growth of complex compound semiconductors in space

NASA Technical Reports Server (NTRS)

Bachmann, K. J.

1986-01-01

A research program on complex semiconducting compounds and alloys was completed that addressed the growth of single crystals of CdSe(y)Te(1-y), Zn(x)Cd(1-x)Te, Mn(x)Cd(1-x)Te, InP(y)As(1-y) and CuInSe2 and the measurement of fundamental physico-chemical properties characterizing the above materials. The purpose of this ground based research program was to lay the foundations for further research concerning the growth of complex ternary compound semiconductors in a microgravity environment.

HgCdTe Surface and Defect Study Program.

DTIC Science & Technology

1986-03-01

different potential for Hg and Cd and hence be reflected in the electronic structure. The techniques of PES and ARPES available to our research group ...D-A166 795 HOME SURFCE ND DEFECT STUDY PROQRN(U) SATA / BARBRA RESEARCH CENTER GOLETA CALXF J A WILSON ET AL. USI FE MAR 86 SBRC-60411 ND93-63-C...0168 FO2/2 N L6 ILO 1.5 1. 11111 .6 .ICnrnp CHR HgCdTo SURFACE AND DEFECT STUDY PROGRAM J. A. Wilson and V. A. Cotton Santa Barbara Research Center

Chemokine programming dendritic cell antigen response: part II - programming antigen presentation to T lymphocytes by partially maintaining immature dendritic cell phenotype.

PubMed

Park, Jaehyung; Bryers, James D

2013-05-01

In a companion article to this study,(1) the successful programming of a JAWSII dendritic cell (DC) line's antigen uptake and processing was demonstrated based on pre-treatment of DCs with a specific 'cocktail' of select chemokines. Chemokine pre-treatment modulated cytokine production before and after DC maturation [by lipopolysaccharide (LPS)]. After DC maturation, it induced an antigen uptake and processing capacity at levels 36% and 82% higher than in immature DCs, respectively. Such programming proffers a potential new approach to enhance vaccine efficiency. Unfortunately, simply enhancing antigen uptake does not guarantee the desired activation and proliferation of lymphocytes, e.g. CD4(+) T cells. In this study, phenotype changes and antigen presentation capacity of chemokine pre-treated murine bone marrow-derived DCs were examined in long-term co-culture with antigen-specific CD4(+) T cells to quantify how chemokine pre-treatment may impact the adaptive immune response. When a model antigen, ovalbumin (OVA), was added after intentional LPS maturation of chemokine-treated DCs, OVA-biased CD4(+) T-cell proliferation was initiated from ~ 100% more undivided naive T cells as compared to DCs treated only with LPS. Secretion of the cytokines interferon-γ, interleukin-1β, interleukin-2 and interleukin-10 in the CD4(+) T cell : DC co-culture (with or without chemokine pre-treatment) were essentially the same. Chemokine programming of DCs with a 7 : 3 ratio of CCL3 : CCL19 followed by LPS treatment maintained partial immature phenotypes of DCs, as indicated by surface marker (CD80 and CD86) expression over time. Results here and in our companion paper suggest that chemokine programming of DCs may provide a novel immunotherapy strategy to obviate the natural endocytosis limit of DC antigen uptake, thus potentially increasing DC-based vaccine efficiency. © 2012 Blackwell Publishing Ltd.

Gender Equity: Still Knocking at the Classroom Door.

ERIC Educational Resources Information Center

Sadker, David

1999-01-01

Subtlety and complacency mask ongoing gender bias in today's classrooms. Updates are presented concerning career segregation; single-sex classrooms; safety and health problems; dropout rates; gifted programs; male/female stereotypes; classroom interactions; SAT scores; math, science and technology gender gaps; political reversals; and female…

World wide matching of registration metrology tools of various generations

NASA Astrophysics Data System (ADS)

Laske, F.; Pudnos, A.; Mackey, L.; Tran, P.; Higuchi, M.; Enkrich, C.; Roeth, K.-D.; Schmidt, K.-H.; Adam, D.; Bender, J.

2008-10-01

Turn around time/cycle time is a key success criterion in the semiconductor photomask business. Therefore, global mask suppliers typically allocate work loads based on fab capability and utilization capacity. From a logistical point of view, the manufacturing location of a photomask should be transparent to the customer (mask user). Matching capability of production equipment and especially metrology tools is considered a key enabler to guarantee cross site manufacturing flexibility. Toppan, with manufacturing sites in eight countries worldwide, has an on-going program to match the registration metrology systems of all its production sites. This allows for manufacturing flexibility and risk mitigation.In cooperation with Vistec Semiconductor Systems, Toppan has recently completed a program to match the Vistec LMS IPRO systems at all production sites worldwide. Vistec has developed a new software feature which allows for significantly improved matching of LMS IPRO(x) registration metrology tools of various generations. We will report on the results of the global matching campaign of several of the leading Toppan sites.

Single-nm resolution approach by applying DDRP and DDRM

NASA Astrophysics Data System (ADS)

Shibayama, Wataru; Shigaki, Shuhei; Takeda, Satoshi; Nakajima, Makoto; Sakamoto, Rikimaru

2017-03-01

EUV lithography has been desired as the leading technology for 1x or single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off has been the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp1X nm L/S and single nm line patterning. Especially, semi iso 8nm line was successfully achieved with good LWR (2.5nm) and around 3 times aspect ratio. This single nm patterning technique also helped to enhance sensitivity about 33%. On the other hand, pillar patterning thorough CH pattern by applying DDRP also showed high resolution below 20nm pillar CD with good LCDU and high sensitivity. This new DDRP technology can be the promising approach not only for hp1Xnm level patterning but also single nm patterning in N7/N5 and beyond.

Comparison of DNQ/novolac resists for e-beam exposure

NASA Astrophysics Data System (ADS)

Fedynyshyn, Theodore H.; Doran, Scott P.; Lind, Michele L.; Lyszczarz, Theodore M.; DiNatale, William F.; Lennon, Donna; Sauer, Charles A.; Meute, Jeff

1999-12-01

We have surveyed the commercial resist market with the dual purpose of identifying diazoquinone/novolac based resists that have potential for use as e-beam mask making resists and baselining these resists for comparison against future mask making resist candidates. For completeness, this survey would require that each resist be compared with an optimized developer and development process. To accomplish this task in an acceptable time period, e-beam lithography modeling was employed to quickly identify the resist and developer combinations that lead to superior resist performance. We describe the verification of a method to quickly screen commercial i-line resists with different developers, by determining modeling parameters for i-line resists from e-beam exposures, modeling the resist performance, and comparing predicted performance versus actual performance. We determined the lithographic performance of several DNQ/novolac resists whose modeled performance suggests that sensitivities of less than 40 (mu) C/cm2 coupled with less than 10-nm CD change per percent change in dose are possible for target 600-nm features. This was accomplished by performing a series of statistically designed experiments on the leading resists candidates to optimize processing variables, followed by comparing experimentally determined resist sensitivities, latitudes, and profiles of the DNQ/novolac resists a their optimized process.

Improved techniques reduce face mask leak during simulated neonatal resuscitation: study 2.

PubMed

Wood, Fiona E; Morley, Colin J; Dawson, Jennifer A; Kamlin, C Omar F; Owen, Louise S; Donath, Susan; Davis, Peter G

2008-05-01

Techniques of positioning and holding neonatal face masks vary. Studies have shown that leak at the face mask is common and often substantial irrespective of operator experience. (1) To identify a technique for face mask placement and hold which will minimise mask leak. (2) To investigate the effect of written instruction and demonstration of the identified technique on mask leak for two round face masks. Three experienced neonatologists compared methods of placing and holding face masks to minimise the leak for Fisher & Paykel 60 mm and Laerdal size 0/1 masks. 50 clinical staff gave positive pressure ventilation to a modified manikin designed to measure leak at the face mask. They were provided with written instructions on how to position and hold each mask and then received a demonstration. Face mask leak was measured after each teaching intervention. A technique of positioning and holding the face masks was identified which minimised leak. The mean (SD) mask leaks before instruction, after instruction and after demonstration were 55% (31), 49% (30), 33% (26) for the Laerdal mask and 57% (25), 47% (28), 32% (30) for the Fisher & Paykel mask. There was no significant difference in mask leak between the two masks. Written instruction alone reduced leak by 8.8% (CI 1.4% to 16.2%) for either mask; when combined with a demonstration mask leak was reduced by 24.1% (CI 16.4% to 31.8%). Written instruction and demonstration of the identified optimal technique resulted in significantly reduced face mask leak.

The Respiratory Environment Diverts the Development of Antiviral Memory CD8 T Cells.

PubMed

Shane, Hillary L; Reagin, Katie L; Klonowski, Kimberly D

2018-06-01

Our understanding of memory CD8 + T cells has been largely derived from acute, systemic infection models. However, memory CD8 + T cells generated from mucosal infection exhibit unique properties and, following respiratory infection, are not maintained in the lung long term. To better understand how infection route modifies memory differentiation, we compared murine CD8 + T cell responses to a vesicular stomatitis virus (VSV) challenge generated intranasally (i.n.) or i.v. The i.n. infection resulted in greater peak expansion of VSV-specific CD8 + T cells. However, this numerical advantage was rapidly lost during the contraction phase of the immune response, resulting in memory CD8 + T cell numerical deficiencies when compared with i.v. infection. Interestingly, the antiviral CD8 + T cells generated in response to i.n. VSV exhibited a biased and sustained proportion of early effector cells (CD127 lo KLRG1 lo ) akin to the developmental program favored after i.n. influenza infection, suggesting that respiratory infection broadly favors an incomplete memory differentiation program. Correspondingly, i.n. VSV infection resulted in lower CD122 expression and eomesodermin levels by VSV-specific CD8 + T cells, further indicative of an inferior transition to bona fide memory. These results may be due to distinct (CD103 + CD11b + ) dendritic cell subsets in the i.n. versus i.v. T cell priming environments, which express molecules that regulate T cell signaling and the balance between tolerance and immunity. Therefore, we propose that distinct immunization routes modulate both the quality and quantity of antiviral effector and memory CD8 + T cells in response to an identical pathogen and should be considered in CD8 + T cell-based vaccine design. Copyright © 2018 by The American Association of Immunologists, Inc.

Retention of pediatric bag-mask ventilation efficacy skill by inexperienced medical student resuscitators using standard bag-mask ventilation masks, pocket masks, and blob masks.

PubMed

Kitagawa, Kory H; Nakamura, Nina M; Yamamoto, Loren

2006-03-01

To measure the ventilation efficacy with three single-sized mask types on infant and child manikin models. Medical students were recruited as study subjects inasmuch as they are inexperienced resuscitators. They were taught proper bag-mask ventilation (BMV) according to the American Heart Association guidelines on an infant and a child manikin. Subjects completed a BMV attempt successfully using the adult standard mask (to simulate the uncertainty of mask selection), pocket mask, and blob mask. Each attempt consisted of 5 ventilations assessed by chest rise of the manikin. Study subjects were asked which mask was easiest to use. Four to six weeks later, subjects repeated the procedure with no instructions (to simulate an emergency BMV encounter without immediate pre-encounter teaching). Forty-six volunteer subjects were studied. During the first attempt, subjects preferred the standard and blob masks over the pocket mask. For the second attempt, the blob mask was preferred over the standard mask, and few liked the pocket mask. Using the standard, blob, and pocket masks on the child manikin, 39, 42, and 20 subjects, respectively, were able to achieve adequate ventilation. Using the standard, blob, and pocket masks on the infant manikin, 45, 45, and 11 subjects, respectively, were able to achieve adequate ventilation. Both the standard and blob masks are more effective than the pocket mask at achieving adequate ventilation on infant and child manikins in this group of inexperienced medical student resuscitators, who most often preferred the blob mask.

Rates of initial acceptance of PAP masks and outcomes of mask switching.

PubMed

Bachour, Adel; Vitikainen, Pirjo; Maasilta, Paula

2016-05-01

Recently, we noticed a considerable development in alleviating problems related to positive airway pressure (PAP) masks. In this study, we report on the initial PAP mask acceptance rates and the effects of mask switching on mask-related symptoms. We prospectively collected all cases of mask switching in our sleep unit for a period of 14 months. At the time of the study, we used ResMed™ CPAP devices and masks. Mask switching was defined as replacing a mask used for at least 1 day with another type of mask. Changing to a different size but keeping the same type of mask did not count as mask switching. Switching outcomes were considered failed if the initial problem persisted or reappeared during the year that followed switching. Our patient pool was 2768. We recorded 343 cases of mask switching among 267 patients. Of the 566 patients who began new PAP therapy, 108 (39 women) had switched masks, yielding an initial mask acceptance rate of 81 %. The reason for switching was poor-fit/uncomfortable mask in 39 %, leak-related in 30 %, outdated model in 25 %, and nasal stuffiness in 6 % of cases; mask switching resolved these problems in 61 %. Mask switching occurred significantly (p = 0.037) more often in women and in new PAP users. The odds ratio for abandoning PAP therapy within 1 year after mask switching was 7.2 times higher (interval 4.7-11.1) than not switching masks. The initial PAP mask acceptance rate was high. Patients who switched their masks are at greater risk for abandoning PAP therapy.

Decrease in delivery room intubation rates after use of nasal intermittent positive pressure ventilation in the delivery room for resuscitation of very low birth weight infants.

PubMed

Biniwale, Manoj; Wertheimer, Fiona

2017-07-01

The literature supports minimizing duration of invasive ventilation to decrease lung injury in premature infants. Neonatal Resuscitation Program recommended use of non-invasive ventilation (NIV) in delivery room for infants requiring prolonged respiratory support. To evaluate the impact of implementation of non-invasive ventilation (NIV) using nasal intermittent positive pressure ventilation (NIPPV) for resuscitation in very low birth infants. Retrospective study was performed after NIPPV was introduced in the delivery room and compared with infants receiving face mask to provide positive pressure ventilation for resuscitation of very low birth weight infants prior to its use. Data collected from 119 infants resuscitated using NIPPV and 102 infants resuscitated with a face mask in a single institution. The primary outcome was the need for endotracheal intubation in the delivery room. Data was analyzed using IBM SPSS Statistics software version 24. A total of 31% of infants were intubated in the delivery room in the NIPPV group compared to 85% in the Face mask group (p=<0.001). Chest compression rates were 11% in the NIPPV group and 31% in the Face mask group (p<0.001). Epinephrine administration was also lower in NIPPV group (2% vs. 8%; P=0.03). Only 38% infants remained intubated at 24hours of age in the NIPPV group compared to 66% in the Face mask group (p<0.001). Median duration of invasive ventilation in the NIPPV group was shorter (2days) compared to the Face mask group (11days) (p=0.01). The incidence of air-leaks was not significant between the two groups. NIPPV was safely and effectively used in the delivery room settings to provide respiratory support for VLBW infants with less need for intubation, chest compressions, epinephrine administration and subsequent invasive ventilation. Copyright © 2017 Elsevier B.V. All rights reserved.

ACVP-12: Quantitative Assessment of HIV/SIV Viral DNA in Laser Capture Microdissected (LCM) CD4+ T cell and/or Macrophage Populations from Formalin-Fixed Tissue Specimens | Frederick National Laboratory for Cancer Research

Cancer.gov

The Tissue Analysis Core (TAC) within the AIDS and Cancer Virus Program will process, embed, and perform microtomy on fixed tissue samples presented in ethanol. CD4 (DAB) and CD68/CD163 (FastRed) double immunohistochemistry will be performed, allowin

Bone histomorphometry using free and commonly available software.

PubMed

Egan, Kevin P; Brennan, Tracy A; Pignolo, Robert J

2012-12-01

Histomorphometric analysis is a widely used technique to assess changes in tissue structure and function. Commercially available programs that measure histomorphometric parameters can be cost-prohibitive. In this study, we compared an inexpensive method of histomorphometry to a current proprietary software program. Image J and Adobe Photoshop(®) were used to measure static and kinetic bone histomorphometric parameters. Photomicrographs of Goldner's trichrome-stained femurs were used to generate black-and-white image masks, representing bone and non-bone tissue, respectively, in Adobe Photoshop(®) . The masks were used to quantify histomorphometric parameters (bone volume, tissue volume, osteoid volume, mineralizing surface and interlabel width) in Image J. The resultant values obtained using Image J and the proprietary software were compared and differences found to be statistically non-significant. The wide-ranging use of histomorphometric analysis for assessing the basic morphology of tissue components makes it important to have affordable and accurate measurement options available for a diverse range of applications. Here we have developed and validated an approach to histomorphometry using commonly and freely available software that is comparable to a much more costly, commercially available software program. © 2012 Blackwell Publishing Limited.

Bone histomorphometry using free and commonly available software

PubMed Central

Egan, Kevin P.; Brennan, Tracy A.; Pignolo, Robert J.

2012-01-01

Aims Histomorphometric analysis is a widely used technique to assess changes in tissue structure and function. Commercially-available programs that measure histomorphometric parameters can be cost prohibitive. In this study, we compared an inexpensive method of histomorphometry to a current proprietary software program. Methods and results Image J and Adobe Photoshop® were used to measure static and kinetic bone histomorphometric parameters. Photomicrographs of Goldner’s Trichrome stained femurs were used to generate black and white image masks, representing bone and non-bone tissue, respectively, in Adobe Photoshop®. The masks were used to quantify histomorphometric parameters (bone volume, tissue volume, osteoid volume, mineralizing surface, and interlabel width) in Image J. The resultant values obtained using Image J and the proprietary software were compared and found to be statistically non-significant. Conclusions The wide ranging use of histomorphometric analysis for assessing the basic morphology of tissue components makes it important to have affordable and accurate measurement options that are available for a diverse range of applications. Here we have developed and validated an approach to histomorphometry using commonly and freely available software that is comparable to a much more costly, commercially-available software program. PMID:22882309

Testing the efficacy of homemade masks: would they protect in an influenza pandemic?

PubMed

Davies, Anna; Thompson, Katy-Anne; Giri, Karthika; Kafatos, George; Walker, Jimmy; Bennett, Allan

2013-08-01

This study examined homemade masks as an alternative to commercial face masks. Several household materials were evaluated for the capacity to block bacterial and viral aerosols. Twenty-one healthy volunteers made their own face masks from cotton t-shirts; the masks were then tested for fit. The number of microorganisms isolated from coughs of healthy volunteers wearing their homemade mask, a surgical mask, or no mask was compared using several air-sampling techniques. The median-fit factor of the homemade masks was one-half that of the surgical masks. Both masks significantly reduced the number of microorganisms expelled by volunteers, although the surgical mask was 3 times more effective in blocking transmission than the homemade mask. Our findings suggest that a homemade mask should only be considered as a last resort to prevent droplet transmission from infected individuals, but it would be better than no protection.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.

A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered ontomore » the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.« less

Tuberculosis is associated with expansion of a motile, permissive and immunomodulatory CD16+ monocyte population via the IL-10/STAT3 axis

PubMed Central

Lastrucci, Claire; Bénard, Alan; Balboa, Luciana; Pingris, Karine; Souriant, Shanti; Poincloux, Renaud; Al Saati, Talal; Rasolofo, Voahangy; González-Montaner, Pablo; Inwentarz, Sandra; Moraña, Eduardo Jose; Kondova, Ivanela; Verreck, Frank AW; Sasiain, Maria del Carmen; Neyrolles, Olivier; Maridonneau-Parini, Isabelle; Lugo-Villarino, Geanncarlo; Cougoule, Céline

2015-01-01

The human CD14+ monocyte compartment is composed by two subsets based on CD16 expression. We previously reported that this compartment is perturbed in tuberculosis (TB) patients, as reflected by the expansion of CD16+ monocytes along with disease severity. Whether this unbalance is beneficial or detrimental to host defense remains to be elucidated. Here in the context of active TB, we demonstrate that human monocytes are predisposed to differentiate towards an anti-inflammatory (M2-like) macrophage activation program characterized by the CD16+CD163+MerTK+pSTAT3+ phenotype and functional properties such as enhanced protease-dependent motility, pathogen permissivity and immunomodulation. This process is dependent on STAT3 activation, and loss-of-function experiments point towards a detrimental role in host defense against TB. Importantly, we provide a critical correlation between the abundance of the CD16+CD163+MerTK+pSTAT3+ cells and the progression of the disease either at the local level in a non-human primate tuberculous granuloma context, or at the systemic level through the detection of the soluble form of CD163 in human sera. Collectively, this study argues for the pathogenic role of the CD16+CD163+MerTK+pSTAT3+ monocyte-to-macrophage differentiation program and its potential as a target for TB therapy, and promotes the detection of circulating CD163 as a potential biomarker for disease progression and monitoring of treatment efficacy. PMID:26482950

Single-particle states in ^112Cd probed with the ^111Cd(d,p) reaction

NASA Astrophysics Data System (ADS)

Garrett, P. E.; Jamieson, D.; Demand, G. A.; Finlay, P.; Green, K. L.; Leach, K. G.; Phillips, A. A.; Sumithrarachchi, C. S.; Svensson, C. E.; Triambak, S.; Wong, J.; Ball, G. C.; Hertenberger, R.; Wirth, H.-F.; Kr"Ucken, R.; Faestermann, T.

2009-10-01

As part of a program of detailed spectroscopy of the Cd isotopes, the single-particle neutron states in ^112Cd have been probed with the ^111Cd(d,p) reaction. Beams of polarized 22 MeV deuterons, obtained from the LMU/TUM Tandem Accelerator, bombarded a target of ^111Cd. The protons from the reaction, corresponding to excitation energies up to 3 MeV in ^112Cd, were momentum analyzed with the Q3D spectrograph. Cross sections and analyzing powers were fit to results of DWBA calculations, and spectroscopic factors were determined. The results from the experiment, and implications for the structure of ^112Cd, will be presented.

Novel Adult Stem Cells for Peripheral Nerve Regeneration

DTIC Science & Technology

2012-09-01

were also positive for MSC surface marker CD29 and CD44 (Fig. 1F-G). However, CD29 and CD44 are also expressed in SMCs, so we will not use these non...tubulin. In addition, MVSCs were negative for perivascular MSC marker CD146 (Fig. 1H) and SMC progenitor marker Sca-1 (Fig. 1I). MVSCs were also...University of California, Berkeley, California 94720, USA. 2 UC Berkeley-UCSF Graduate Program in Bioengineering, Berkeley, California 94720, USA. 3

On Orbit Performance of the Defense Meteorological Satellite Program (DMSP) 5D3 Spacecraft Power System

DTIC Science & Technology

2011-12-30

TD O £ c c ^ co — £ °> S5 o E r^ I— E o> ^ LO o 2 O c Q. £ g * CO O =3 CO E c CX) IT) <* CD Q_ C E _Q i_...fe co oo h- O I I I CO (D CO p CO c5 "S _c co o o CO _ TD 5 *> =3 CD -K Ö) s i- CO c 2 o) o .E o CO...CD •o O 0 -4—» CO CD E Ü Q. •D o TD ^ CO O O E CD •+—. CD O CD (D >> ^ >% •4—< *§ CD -•-• O) CD _Q _£Z C CD = < •o D)

My Favorite Things Electronically Speaking, 1997 Edition.

ERIC Educational Resources Information Center

Glantz, Shelley

1997-01-01

Responding to an informal survey, 96 media specialists named favorite software, CD-ROMs, and online sites. This article lists automation packages, electronic encyclopedias, CD-ROMs, electronic magazine indexes, CD-ROM and online database services, electronic sources of current events, laser disks for grades 6-12, word processing programs for…

An Experimental Test of CD-ROM Aided Instruction in Transnational Management.

ERIC Educational Resources Information Center

Oviatt, Benjamin M.; Bansal, Ptraima; Houghton, Susan

2000-01-01

Twenty-seven graduate students used a CD-ROM program to study transnational management, while a control group (n=26) used traditional study methods. Use of the CD-ROM was not associated with better examination performance. Implications for increased investment in new classroom technology are drawn. (Author/DB)

Macintosh and Photo-CD Technologies Provide Orientations to Southwestern College Library.

ERIC Educational Resources Information Center

Alexander, William J.; And Others

Due to a rapidly increasing demand for bibliographic instruction, Southwestern College in San Ysidro, California, devised an interactive English-Spanish multimedia library skills program using Macintosh and Kodak PhotoCD technologies. First, a PhotoCD containing 100 photos of library services was produced. Then, an interactive Macintosh program…

A cluster randomised trial of cloth masks compared with medical masks in healthcare workers

PubMed Central

MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

2015-01-01

Objective The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. Setting 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. Participants 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Intervention Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Main outcome measure Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. Results The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. Conclusions This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Trial registration number Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. PMID:25903751

Paving the way to a full chip gate level double patterning application

NASA Astrophysics Data System (ADS)

Haffner, Henning; Meiring, Jason; Baum, Zachary; Halle, Scott

2007-10-01

Double patterning lithography processes can offer significant yield enhancement for challenging circuit designs. Many decomposition (i.e. the process of dividing the layout design into first and second exposures) techniques are possible, but the focus of this paper is on the use of a secondary "cut" mask to trim away extraneous features left from the first exposure. This approach has the advantage that each exposure only needs to support a subset of critical features (e.g. dense lines with the first exposure, isolated spaces with the second one). The extraneous features ("printing assist features" or PrAFs) are designed to support the process window of critical features much like the role of the subresolution assist features (SRAFs) in conventional processes. However, the printing nature of PrAFs leads to many more design options, and hence a greater process and decomposition parameter exploration space, than are available for SRAFs. A decomposition scheme using PRAFs was developed for a gate level process. A critical driver of the work was to deliver improved across-chip linewidth variation (ACLV) performance versus an optimized single exposure process while providing support for a larger range of critical features. A variety of PRAF techniques were investigated by simulation, with a PrAF scheme similar to standard SRAF rules being chosen as the optimal solution [1]. This paper discusses aspects of the code development for an automated PrAF generation and placement scheme and the subsequent decomposition of a layout into two mask levels. While PrAF placement and decomposition is straightforward for layouts with pitch and orientation restrictions, it becomes rather complex for unrestricted layout styles. Because this higher complexity yields more irregularly shaped PrAFs, mask making becomes another critical driver of the optimum placement and clean-up strategies. Examples are given of how those challenges are met or can be successfully circumvented. During subsequent decomposition of the PrAF-enhanced layout into two independent mask levels, various geometric decomposition parameters have to be considered. As an example, the removal of PrAFs has to be guaranteed by a minimum required overlap of the cut mask opening past any PrAF edge. It is discussed that process assumptions such as CD tolerances and overlay as well as inter-level relationship ground rules need to be considered to successfully optimize the final decomposition scheme. Furthermore, simulation and experimental results regarding not only ACLV but also across-device linewidth variation (ADLV) are analyzed.

Promyelocytic leukemia zinc finger turns on the effector T cell program without requirement for agonist TCR signaling.

PubMed

Savage, Adam K; Constantinides, Michael G; Bendelac, Albert

2011-05-15

Thymocytes expressing the NKT cell semi-invariant αβ TCR are thought to undergo agonist interactions with CD1d ligands prior to expressing promyelocytic leukemia zinc finger (PLZF), a broad complex, tramtrack, bric-a-brac, poxvirus, and zinc finger transcription factor that directs acquisition of the effector program of these innate-like T cells. Whether PLZF can mediate this effector conversion independently of agonist signaling has not been investigated. We demonstrated that transgenic (Tg) expression of PLZF under the CD4 promoter induced the innate effector program in two different MHC class II-restricted TCR-Tg Rag1(-/-) models examined. In CD4 thymocytes expressing a fixed Tg TCR β-chain, the associated TCRα sequences in wild-type and PLZF-Tg mice overlapped extensively, further demonstrating that PLZF could induce the effector program in most CD4 T cells that would normally be selected as naive cells. In contrast, PLZF altered the negative selection of thymocytes expressing TCR β-chains reactive against several retroviral superantigens. Thus, PLZF is remarkable in that it is a transcription factor capable of inducing an effector program in the absence of T cell agonist interactions or cell division. Its expression may also enhance the survival of agonist-signaled thymocytes.

Lack of the programmed death-1 receptor renders host susceptible to enteric microbial infection through impairing the production of the mucosal natural killer cell effector molecules.

PubMed

Solaymani-Mohammadi, Shahram; Lakhdari, Omar; Minev, Ivelina; Shenouda, Steve; Frey, Blake F; Billeskov, Rolf; Singer, Steven M; Berzofsky, Jay A; Eckmann, Lars; Kagnoff, Martin F

2016-03-01

The programmed death-1 receptor is expressed on a wide range of immune effector cells, including T cells, natural killer T cells, dendritic cells, macrophages, and natural killer cells. In malignancies and chronic viral infections, increased expression of programmed death-1 by T cells is generally associated with a poor prognosis. However, its role in early host microbial defense at the intestinal mucosa is not well understood. We report that programmed death-1 expression is increased on conventional natural killer cells but not on CD4(+), CD8(+) or natural killer T cells, or CD11b(+) or CD11c(+) macrophages or dendritic cells after infection with the mouse pathogen Citrobacter rodentium. Mice genetically deficient in programmed death-1 or treated with anti-programmed death-1 antibody were more susceptible to acute enteric and systemic infection with Citrobacter rodentium. Wild-type but not programmed death-1-deficient mice infected with Citrobacter rodentium showed significantly increased expression of the conventional mucosal NK cell effector molecules granzyme B and perforin. In contrast, natural killer cells from programmed death-1-deficient mice had impaired expression of those mediators. Consistent with programmed death-1 being important for intracellular expression of natural killer cell effector molecules, mice depleted of natural killer cells and perforin-deficient mice manifested increased susceptibility to acute enteric infection with Citrobacter rodentium. Our findings suggest that increased programmed death-1 signaling pathway expression by conventional natural killer cells promotes host protection at the intestinal mucosa during acute infection with a bacterial gut pathogen by enhancing the expression and production of important effectors of natural killer cell function. © Society for Leukocyte Biology.

A closer look at four-dot masking of a foveated target

PubMed Central

Wilson, Hugh R.

2016-01-01

Four-dot masking with a common onset mask was recently demonstrated in a fully attended and foveated target (Filmer, Mattingley & Dux, 2015). Here, we replicate and extend this finding by directly comparing a four-dot mask with an annulus mask while probing masking as a function of mask duration, and target-mask separation. Our results suggest that while an annulus mask operates via spatially local contour interactions, a four-dot mask operates through spatially global mechanisms. We also measure how the visual system’s representation of an oriented bar is impacted by a four-dot mask, and find that masking here does not degrade the precision of perceived targets, but instead appears to be driven exclusively by rendering the target completely invisible. PMID:27280073

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

A comprehensive experimental characterization of the iPIX gamma imager

NASA Astrophysics Data System (ADS)

Amgarou, K.; Paradiso, V.; Patoz, A.; Bonnet, F.; Handley, J.; Couturier, P.; Becker, F.; Menaa, N.

2016-08-01

The results of more than 280 different experiments aimed at exploring the main features and performances of a newly developed gamma imager, called iPIX, are summarized in this paper. iPIX is designed to quickly localize radioactive sources while estimating the ambient dose equivalent rate at the measurement point. It integrates a 1 mm thick CdTe detector directly bump-bonded to a Timepix chip, a tungsten coded-aperture mask, and a mini RGB camera. It also represents a major technological breakthrough in terms of lightness, compactness, usability, response sensitivity, and angular resolution. As an example of its key strengths, an 241Am source with a dose rate of only few nSv/h can be localized in less than one minute.

Lectin-carbohydrate recognition mechanism of Plasmodium berghei in the midgut of malaria vector Anopheles stephensi using quantum dot as a new approach.

PubMed

Basseri, Hamid R; Javazm, Mahdi Salari; Farivar, Leila; Abai, Mohammad R

2016-04-01

Potential targets of Plasmodium ookinetes at the mosquito midgut walls were investigated in relation to interfering malarial transmission. In this study, the essential application of Quantum Dots (QDs) was used to examine the interaction between Plasmodium berghei ookinetes and the Anopheles stephensi midgut, based on lectin-carbohydrate recognition. Two significant lectins were utilized to determine this interaction. Two QDs, cadmium telluride (CdTe)/CdS and cadmium selenide (CdSe)/CdS, were employed in staining Plasmodium ookinete to study its interaction in the midgut of the mosquito vector in vivo. Concurrently, two lectins, wheat germ agglutinin (WGA) and concanavalin A (Con A), were inadvertently exploited to mask lectin binding sites between ookinetes and mosquito midgut cells. The numbers of ookinetes in both lumen and epithelial cells were eventually counted, following adequate preparation of wax sections extracted from whole midgut, and subsequent examination using a differential interference contrast a fluorescence microscopic technique. Interestingly, we detected that neither of the QDs mutated ookinete invasion into the midgut cells of the investigated mosquitoes. QD staining of ookinetes remained permanent despite the effective embedding procedure. The massive binding potency of ookinetes to midgut cells of the cross-examined mosquitoes undoubtedly revealed that Con A did not interrupt ookinete penetration into the midgut wall. In contrast, WGA inhibited ookinete invasion into the midgut cells. The results proved that QD nanoparticles are biocompatible, non-toxic to P. berghei and stable to photobleaching. The QDs staining, which was successfully implemented for ookinete labelling, is a simple and effective tool which plays a crucial role in bioimaging including the study of parasite-vector interactions. Copyright © 2016 Elsevier B.V. All rights reserved.

A comparison of two different formulations of diclofenac sodium 0.1% in the treatment of inflammation following cataract-intraocular lens surgery.

PubMed

Mester, Ulrich; Lohmann, Chris; Pleyer, U; Steinkamp, G; Völcker, E; Kruger, H; Raj, Palaniswamy Sunder

2002-01-01

To compare the efficacy, tolerability and local tolerance of diclofenac sodium 0.1% containing hydroxypropylgamma cyclodextrin preserved with benzalkonium chloride 0.005% (Voltaren Ophtha CD), with that of diclofenac sodium 0.1% preserved with thiomersal 0.004% (Voltaren Ophtha) in the treatment of inflammation after cataract-intraocular lens surgery. Randomised 2:1, double-masked, parallel-group study in six centres in Germany. 299 patients scheduled to undergo phacoemulsification with posterior chamber intraocular lens implantation. Study medications were instilled four times in the 30 minutes before surgery and four times daily from the first postoperative day. The key efficacy variable was the reduction in anterior chamber flare (photons/millisecond) from day 1 to day 6 to 8. Patients underwent comprehensive ocular examinations, including laser flaremetry (KOWA), preoperatively and postoperatively at days 1, 6 to 8 and 24 to 32. 268 patients (Voltaren Ophtha CD 177, Voltaren Ophtha 91) completed the day 6 to 8 visit without any protocol violations. Reduction in the degree of intraocular inflammation with Voltaren Ophtha CD was equivalent to that achieved with Voltaren Ophtha at the day 6 to 8 [95% confidence interval (CI) -3.07 to +0.54] and day 24 to 32 (95% CI -1.44 to +1.40) visits. Although there was no significant (p = 0.464) difference between the two study groups in patients' global assessment of local tolerance at day 24 to 32, ocular discomfort was significantly (p = 0.023) less with Voltaren Ophtha CD compared with Voltaren Ophtha. Voltaren Ophtha CD was as effective and well tolerated but had less ocular discomfort compared with Voltaren Ophtha in the treatment of ocular inflammation after phacoemulsification with intraocular lens implantation. This new formulation of diclofenac sodium 0.1% may be used as an alternative to the existing formulations of ophthalmic diclofenac sodium 0.1%.

Force-dependent static dead space of face masks used with holding chambers.

PubMed

Shah, Samir A; Berlinski, Ariel B; Rubin, Bruce K

2006-02-01

Pressurized metered-dose inhalers with valved holding chambers and masks are commonly used for aerosol delivery in children. Drug delivery can decrease when the dead-space volume (DSV) of the valved holding chamber is increased, but there are no published data evaluating force-dependent DSV among different masks. Seven masks were studied. Masks were sealed at the valved holding chamber end and filled with water to measure mask volume. To measure mask DSV we used a mannequin of 2-year-old-size face and we applied the mask with forces of 1.5, 3.5, and 7 pounds. Mask seal was determined by direct observation. Intra-brand analysis was done via analysis of variance. At 3.5 pounds of force, the DSV ranged from 29 mL to 100 mL, with 3 masks having DSV of < 50 mL. The remaining masks all had DSV > 60 mL. At 3.5 pounds of force, DSV percent of mask volume ranged from 33.7% (Aerochamber, p < 0.01 compared with other masks) to 100% (Pocket Chamber). DSV decreased with increasing force with most of the masks, and the slope of this line was inversely proportional to mask flexibility. Mask fit was 100% at 1.5 pounds of force only with the Aerochamber and Optichamber. Mask fit was poorest with the Vortex, Pocket Chamber, and BreatheRite masks. Rigid masks with large DSV might not be not suitable for use in children, especially if discomfort from the stiff mask makes its use less acceptable to the child.

Influence of mask type and mask position on the effectiveness of bag-mask ventilation in a neonatal manikin.

PubMed

Deindl, Philipp; O'Reilly, Megan; Zoller, Katharina; Berger, Angelika; Pollak, Arnold; Schwindt, Jens; Schmölzer, Georg M

2014-01-01

Anatomical face mask with an air cushion rim might be placed accidentally in a false orientation on the newborn's face or filled with various amounts of air during neonatal resuscitation. Both false orientation as well as variable filling may reduce a tight seal and therefore hamper effective positive pressure ventilation (PPV). We aimed to measure the influence of mask type and mask position on the effectiveness of PPV. Twenty neonatal staff members delivered PPV to a modified, leak-free manikin. Resuscitation parameters were recorded using a self-inflatable bag PPV with an Intersurgical anatomical air cushion rim face mask (IS) and a size 0/1 Laerdal round face mask. Three different positions of the IS were tested: correct position, 90° and 180° rotation in reference to the midline of the face. IS masks in each correct position on the face but with different inflation of the air cushion (empty, 10, 20 and 30 mL). Mask leak was similar with mask rotation to either 90° or 180° but significantly increased from 27 (13-73) % with an adequate filled IS mask compared to 52 (16-83) % with an emptied air cushion rim. Anatomical-shaped face mask had similar mask leaks compared to round face mask. A wrongly positioned anatomical-shaped mask does not influence mask leak. Mask leak significantly increased once the air cushion rim was empty, which may cause failure in mask PPV.

CD-ROM-aided Databases

NASA Astrophysics Data System (ADS)

Sano, Tomoyuki; Suzuki, Masataka; Nishida, Hideo

The Development of CAI system using CD-ROM and NAPLPS (North American Presentation Level Protocol Syntax) was taken place by Himeji Dokkyo University. The characteristics of CAI using CD-ROM as information processing series for the department of liberal arts student are described. The system is that the computer program, vast amount of voice data and graphics data are stored in a CD-ROM. It is very effective to improve learning ability of student.

Orientation tuning of contrast masking caused by motion streaks.

PubMed

Apthorp, Deborah; Cass, John; Alais, David

2010-08-01

We investigated whether the oriented trails of blur left by fast-moving dots (i.e., "motion streaks") effectively mask grating targets. Using a classic overlay masking paradigm, we varied mask contrast and target orientation to reveal underlying tuning. Fast-moving Gaussian blob arrays elevated thresholds for detection of static gratings, both monoptically and dichoptically. Monoptic masking at high mask (i.e., streak) contrasts is tuned for orientation and exhibits a similar bandwidth to masking functions obtained with grating stimuli (∼30 degrees). Dichoptic masking fails to show reliable orientation-tuned masking, but dichoptic masks at very low contrast produce a narrowly tuned facilitation (∼17 degrees). For iso-oriented streak masks and grating targets, we also explored masking as a function of mask contrast. Interestingly, dichoptic masking shows a classic "dipper"-like TVC function, whereas monoptic masking shows no dip and a steeper "handle". There is a very strong unoriented component to the masking, which we attribute to transiently biased temporal frequency masking. Fourier analysis of "motion streak" images shows interesting differences between dichoptic and monoptic functions and the information in the stimulus. Our data add weight to the growing body of evidence that the oriented blur of motion streaks contributes to the processing of fast motion signals.

Mindfulness meditation training effects on CD4+ T lymphocytes in HIV-1 infected adults: A small randomized controlled trial

PubMed Central

Creswell, J. David; Myers, Hector F.; Cole, Steven W.; Irwin, Michael R.

2009-01-01

Mindfulness meditation training has stress reduction benefits in various patient populations, but its effects on biological markers of HIV-1 progression are unknown. The present study tested the efficacy of an 8-week Mindfulness-based stress reduction (MBSR) meditation program compared to a 1-day control seminar on CD4+ T lymphocyte counts in stressed HIV infected adults. A single-blind randomized controlled trial was conducted with enrollment and follow-up occurring between November 2005 and December 2007. A diverse community sample of 48 HIV-1 infected adults was randomized and entered treatment in either an 8-week MBSR or a 1-day control stress reduction education seminar. The primary outcome was circulating counts of CD4+ T lymphocytes. Participants in the 1-day control seminar showed declines in CD4+ T lymphocyte counts whereas counts among participants in the 8-week MBSR program were unchanged from baseline to post-intervention (time × treatment condition interaction, p = .02). This effect was independent of antiretroviral (ARV) medication use. Additional analyses indicated that treatment adherence to the mindfulness meditation program, as measured by class attendance, mediated the effects of mindfulness meditation training on buffering CD4+ T lymphocyte declines. These findings provide an initial indication that mindfulness meditation training can buffer CD4+ T lymphocyte declines in HIV-1 infected adults. PMID:18678242

A Novel Sphingomyelinase-Like Enzyme in Ixodes scapularis Tick Saliva Drives Host CD4+ T cells to Express IL-4

PubMed Central

Alarcon-Chaidez, F. J.; Boppana, V. D.; Hagymasi, A.T.; Adler, A. J.; Wikel, S. K.

2009-01-01

Tick feeding modulates host immune responses. Tick-induced skewing of host CD4+ T cells towards a Th2 cytokine profile facilitates transmission of tick-borne pathogens that would otherwise be neutralized by Th1 cytokines. Tick-derived factors that drive this Th2 response have not previously been characterized. In the current study, we examined an I. scapularis cDNA library prepared at 18-24 hours of feeding and identified and expressed a tick gene with homology to Loxosceles spider venom proteins with sphingomyelinase activity. This I. scapularis sphingomyelinase-like (IsSMase) protein is a Mg+2-dependent, neutral (pH 7.4) form of sphingomyelinase. Significantly, in an in vivo TCR transgenic adoptive transfer assay IsSMase programmed host CD4+ T cells to express the hallmark Th2 effector cytokine IL-4. IsSMase appears to directly program host CD4 T cell IL-4 expression (as opposed to its metabolic by-products) because induced IL-4 expression was not altered when enzymatic activity was neutralized. TCR transgenic CD4 T cell proliferation (CFSE-dilution) was also significantly increased by IsSMase. Furthermore, a Th2 response is superimposed onto a virally-primed Th1 response by IsSMase. Thus, IsSMase is the first identified tick molecule capable of programming host CD4+ T cells to express IL-4. PMID:19292772

CD63 tetraspanin is a negative driver of epithelial-to-mesenchymal transition in human melanoma cells.

PubMed

Lupia, Antonella; Peppicelli, Silvia; Witort, Ewa; Bianchini, Francesca; Carloni, Vinicio; Pimpinelli, Nicola; Urso, Carmelo; Borgognoni, Lorenzo; Capaccioli, Sergio; Calorini, Lido; Lulli, Matteo

2014-12-01

The CD63 tetraspanin is highly expressed in the early stages of melanoma and decreases in advanced lesions, suggesting it as a possible suppressor of tumor progression. We employed loss- and gain-of-gene-function approaches to investigate the role of CD63 in melanoma progression and acquisition of the epithelial-to-mesenchymal transition (EMT) program. We used two human melanoma cell lines derived from primary tumors and one primary human melanoma cell line isolated from a cutaneous metastasis, differing by levels of CD63 expression. CD63-silenced melanoma cells showed enhanced motility and invasiveness with downregulation of E-cadherin and upregulation of N-cadherin and Snail. In parallel experiments, transient and stable ectopic expression of CD63 resulted in a robust reduction of cell motility, invasiveness, and protease activities, which was proportional to the increase in CD63 protein level. Transfected cells overexpressing the highest level of CD63 when transplanted into immunodeficient mice showed a reduced incidence and rate of tumor growth. Moreover, these cells showed a reduction of N-cadherin, Vimentin, Zeb1, and a-SMA, and a significant resistance to undergo an EMT program both in basal condition and in the following stimulation with TGFβ. Thus, our results establish a previously unreported mechanistic link between the tetraspanin CD63 and EMT abrogation in melanoma.

Examining the policies and guidelines around the use of masks and respirators by healthcare workers in China, Pakistan and Vietnam

PubMed Central

MacIntyre, C Raina; Zheng, Yang; Wang, Quanyi; Toor, Zafar Iqbal; Dung, Tham Chi; Hien, Nguyen Tran; Seale, Holly

2014-01-01

Background: There is an ongoing debate regarding the type of respiratory protection that should be recommended for use for healthcare workers. Materials and methods: A cross-sectional survey was conducted in three countries: China, Pakistan and Vietnam. Results: In China and Pakistan, the infection control guidelines were developed to be in line with the recommendations from the World Health Organization (WHO) and the Centers for Disease Control and Prevention, while in the Vietnamese guidelines the recommendations correspond with the WHO suggestions only. The guidelines from all three countries document the need for training and fit testing; however there is no system to monitor the training and fit testing programs. Across the three countries, there was some inconsistency with regard to the types of products (i.e. masks vs. respirators) recommended for influenza, severe acute respiratory syndrome (SARS) and tuberculosis. Conclusions: Available evidence should be examined and a comprehensive policy should be developed on the use of masks and respirators. The policy should address critical areas such as regulation, training, fit testing and reuse. PMID:28989404

Significance of auditory and kinesthetic feedback to singers' pitch control.

PubMed

Mürbe, Dirk; Pabst, Friedemann; Hofmann, Gert; Sundberg, Johan

2002-03-01

An accurate control of fundamental frequency (F0) is required from singers. This control relies on auditory and kinesthetic feedback. However, a loud accompaniment may mask the auditory feedback, leaving the singers to rely on kinesthetic feedback. The object of the present study was to estimate the significance of auditory and kinesthetic feedback to pitch control in 28 students beginning a professional solo singing education. The singers sang an ascending and descending triad pattern covering their entire pitch range with and without masking noise in legato and staccato and in a slow and a fast tempo. F0 was measured by means of a computer program. The interval sizes between adjacent tones were determined and their departures from equally tempered tuning were calculated. The deviations from this tuning were used as a measure of the accuracy of intonation. Statistical analysis showed a significant effect of masking that amounted to a mean impairment of pitch accuracy by 14 cent across all subjects. Furthermore, significant effects were found of tempo as well as of the staccato/legato conditions. The results indicate that auditory feedback contributes significantly to singers' control of pitch.

Examining the policies and guidelines around the use of masks and respirators by healthcare workers in China, Pakistan and Vietnam.

PubMed

Chughtai, Abrar Ahmad; MacIntyre, C Raina; Zheng, Yang; Wang, Quanyi; Toor, Zafar Iqbal; Dung, Tham Chi; Hien, Nguyen Tran; Seale, Holly

2015-03-01

There is an ongoing debate regarding the type of respiratory protection that should be recommended for use for healthcare workers. A cross-sectional survey was conducted in three countries: China, Pakistan and Vietnam. In China and Pakistan, the infection control guidelines were developed to be in line with the recommendations from the World Health Organization (WHO) and the Centers for Disease Control and Prevention, while in the Vietnamese guidelines the recommendations correspond with the WHO suggestions only. The guidelines from all three countries document the need for training and fit testing; however there is no system to monitor the training and fit testing programs. Across the three countries, there was some inconsistency with regard to the types of products (i.e. masks vs. respirators) recommended for influenza, severe acute respiratory syndrome (SARS) and tuberculosis. Available evidence should be examined and a comprehensive policy should be developed on the use of masks and respirators. The policy should address critical areas such as regulation, training, fit testing and reuse.

Respiratory fit testing for farmworkers in the Black Dirt region of Hudson Valley, New York.

PubMed

Earle-Richardson, Giulia; Fiske, Todd; Wyckoff, Sherry; Shuford, James; May, John

2014-01-01

Respiratory protection in agriculture has lagged behind other industries. Migrant farmworkers often work in dusty environments yet do not receive appropriate, fitted respiratory protection. During May and June of 2013, researchers pilot-tested a respiratory protection program adapted to fit the unique needs of migrant and seasonal farmworkers. It was implemented in Spanish, with literacy support, at convenient times and locations. Additionally, staff was known to workers, and a farmworker medical center provided medical follow-up. Fifty-six farmworkers participated (68%; 82 invited). Of the participants, 88% were male; 20% reported using respiratory protection. One worker had been fit tested previously; 57% reported being exposed to pesticides. All but six farmworkers passed the medical clearance (91%). The mask most commonly fit to the American-born population was a good fit for only 41% of Latino farmworkers. The fact that two thirds of invited farmworkers participated in the clearance and over half completed mask fitting indicates that the modified protocol meets farmworker needs. A wide range of mask types should be made available for Latino farmworkers.

The EOS CERES Global Cloud Mask

NASA Technical Reports Server (NTRS)

Berendes, T. A.; Welch, R. M.; Trepte, Q.; Schaaf, C.; Baum, B. A.

1996-01-01

To detect long-term climate trends, it is essential to produce long-term and consistent data sets from a variety of different satellite platforms. With current global cloud climatology data sets, such as the International Satellite Cloud Climatology Experiment (ISCCP) or CLAVR (Clouds from Advanced Very High Resolution Radiometer), one of the first processing steps is to determine whether an imager pixel is obstructed between the satellite and the surface, i.e., determine a cloud 'mask.' A cloud mask is essential to studies monitoring changes over ocean, land, or snow-covered surfaces. As part of the Earth Observing System (EOS) program, a series of platforms will be flown beginning in 1997 with the Tropical Rainfall Measurement Mission (TRMM) and subsequently the EOS-AM and EOS-PM platforms in following years. The cloud imager on TRMM is the Visible/Infrared Sensor (VIRS), while the Moderate Resolution Imaging Spectroradiometer (MODIS) is the imager on the EOS platforms. To be useful for long term studies, a cloud masking algorithm should produce consistent results between existing (AVHRR) data, and future VIRS and MODIS data. The present work outlines both existing and proposed approaches to detecting cloud using multispectral narrowband radiance data. Clouds generally are characterized by higher albedos and lower temperatures than the underlying surface. However, there are numerous conditions when this characterization is inappropriate, most notably over snow and ice of the cloud types, cirrus, stratocumulus and cumulus are the most difficult to detect. Other problems arise when analyzing data from sun-glint areas over oceans or lakes over deserts or over regions containing numerous fires and smoke. The cloud mask effort builds upon operational experience of several groups that will now be discussed.

Structure of Simian Immunodeficiency Virus Envelope Spikes Bound with CD4 and Monoclonal Antibody 36D5.

PubMed

Hu, Guiqing; Liu, Jun; Roux, Kenneth H; Taylor, Kenneth A

2017-08-15

The human immunodeficiency virus type 1 (HIV-1)/simian immunodeficiency virus (SIV) envelope spike (Env) mediates viral entry into host cells. The V3 loop of the gp120 component of the Env trimer contributes to the coreceptor binding site and is a target for neutralizing antibodies. We used cryo-electron tomography to visualize the binding of CD4 and the V3 loop monoclonal antibody (MAb) 36D5 to gp120 of the SIV Env trimer. Our results show that 36D5 binds gp120 at the base of the V3 loop and suggest that the antibody exerts its neutralization effect by blocking the coreceptor binding site. The antibody does this without altering the dynamics of the spike motion between closed and open states when CD4 is bound. The interaction between 36D5 and SIV gp120 is similar to the interaction between some broadly neutralizing anti-V3 loop antibodies and HIV-1 gp120. Two conformations of gp120 bound with CD4 are revealed, suggesting an intrinsic dynamic nature of the liganded Env trimer. CD4 binding substantially increases the binding of 36D5 to gp120 in the intact Env trimer, consistent with CD4-induced changes in the conformation of gp120 and the antibody binding site. Binding by MAb 36D5 does not substantially alter the proportions of the two CD4-bound conformations. The position of MAb 36D5 at the V3 base changes little between conformations, indicating that the V3 base serves as a pivot point during the transition between these two states. IMPORTANCE Glycoprotein spikes on the surfaces of SIV and HIV are the sole targets available to the immune system for antibody neutralization. Spikes evade the immune system by a combination of a thick layer of polysaccharide on the surface (the glycan shield) and movement between spike domains that masks the epitope conformation. Using SIV virions whose spikes were "decorated" with the primary cellular receptor (CD4) and an antibody (36D5) at part of the coreceptor binding site, we visualized multiple conformations trapped by the rapid freezing step, which were separated using statistical analysis. Our results show that the CD4-induced conformational dynamics of the spike enhances binding of the antibody. Copyright © 2017 American Society for Microbiology.

Fabrication High Resolution Metrology Target By Step And Repeat Method

NASA Astrophysics Data System (ADS)

Dusa, Mircea

1983-10-01

Based on the photolithography process generally used to generate high resolution masks for semiconductor I.C.S, we found a very useful industrial application of laser technology.First, we have generated high resolution metrology targets which are used in industrial measurement laser interferometers as difra.ction gratings. Secondi we have generated these targets using step and repeat machine, with He-Ne laser interferometer controlled state, as a pattern generator, due to suitable computer programming.Actually, high resolution metrology target, means two chromium plates, one of which is called the" rule" the other one the "vernier". In Fig.1 we have the configuration of the rule and the vernier. The rule has a succesion of 3 μM lines generated as a difraction grating on a 4 x 4 inch chromium blank. The vernier has several exposed fields( areas) having 3 - 15 μm lines, fields placed on very precise position on the chromium blank surface. High degree of uniformity, tight CD tolerances, low defect density required by the targets, creates specialised problems during processing. Details of the processing, together with experimental results will be presented. Before we start to enter into process details, we have to point out that the dimensional requirements of the reticle target, are quite similar or perhaps more strict than LSI master casks. These requirements presented in Fig.2.

Software Engineering: Tools of the Profession

DTIC Science & Technology

1976-09-01

Sequencing Discipline Each of the flowcharts share the property that they have a single entry (at the top) and a single exit (at the bottom) . The three...structures is what Dijkstra refers to as a "sequencing discipline". Flowcharts of programs using only these 20 <u CU -H CO J2 CD G 01 S 0) o jj O CO 8...4-1 3 CD CO a* 0) C-O 21 decompositions show a straight- line program (restricted topology) as compared with flowcharts of programs allowing multiple

A cluster randomised trial of cloth masks compared with medical masks in healthcare workers.

PubMed

MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

2015-04-22

The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Clay Mask Workshop

ERIC Educational Resources Information Center

Gamble, David L.

2012-01-01

Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

Independent Reading of CD-ROM Storybooks: Measuring Comprehension with Oral Retellings

ERIC Educational Resources Information Center

Pearman, Cathy J.

2008-01-01

CD-ROM storybooks may facilitate reading comprehension for students who are struggling with reading comprehension. Therefore, the use of CD-ROM storybooks in the classroom as part of a reading instruction program, literacy center, or for independent reading time could benefit young readers. (Contains 2 tables and 1 figure.)

CD-ROM Technology for Education and Support of Site Supervisors

ERIC Educational Resources Information Center

Manzanares, Mark G.; O'Halloran, Theresa M.; McCartney, Teri J.; Filer, Rex D.; Varhely, Susan C.; Calhoun, Ken

2004-01-01

In this article, the authors discuss the creation and evaluation of a CD-ROM to train and support prepracticum, practicum, and internship site supervisors in a master's-level counselor education program. The authors, from a small, rural, southwestern college, created and distributed a CD-ROM containing video and document resources for this…

Metacontrast masking is processed before grapheme-color synesthesia.

PubMed

Bacon, Michael Patrick; Bridgeman, Bruce; Ramachandran, Vilayanur S

2013-01-01

We investigated the physiological mechanism of grapheme-color synesthesia using metacontrast masking. A metacontrast target is rendered invisible by a mask that is delayed by about 60 ms; the target and mask do not overlap in space or time. Little masking occurs, however, if the target and mask are simultaneous. This effect must be cortical, because it can be obtained dichoptically. To compare the data for synesthetes and controls, we developed a metacontrast design in which nonsynesthete controls showed weaker dichromatic masking (i.e., the target and mask were in different colors) than monochromatic masking. We accomplished this with an equiluminant target, mask, and background for each observer. If synesthetic color affected metacontrast, synesthetes should show monochromatic masking more similar to the weak dichromatic masking among controls, because synesthetes could add their synesthetic color to the monochromatic condition. The target-mask pairs used for each synesthete were graphemes that elicited strong synesthetic colors. We found stronger monochromatic than dichromatic U-shaped metacontrast for both synesthetes and controls, with optimal masking at an asynchrony of 66 ms. The difference in performance between the monochromatic and dichromatic conditions in the synesthetes indicates that synesthesia occurs at a later processing stage than does metacontrast masking.

Pattern masking: the importance of remote spatial frequencies and their phase alignment.

PubMed

Huang, Pi-Chun; Maehara, Goro; May, Keith A; Hess, Robert F

2012-02-16

To assess the effects of spatial frequency and phase alignment of mask components in pattern masking, target threshold vs. mask contrast (TvC) functions for a sine-wave grating (S) target were measured for five types of mask: a sine-wave grating (S), a square-wave grating (Q), a missing fundamental square-wave grating (M), harmonic complexes consisting of phase-scrambled harmonics of a square wave (Qp), and harmonic complexes consisting of phase-scrambled harmonics of a missing fundamental square wave (Mp). Target and masks had the same fundamental frequency (0.46 cpd) and the target was added in phase with the fundamental frequency component of the mask. Under monocular viewing conditions, the strength of masking depends on phase relationships among mask spatial frequencies far removed from that of the target, at least 3 times the target frequency, only when there are common target and mask spatial frequencies. Under dichoptic viewing conditions, S and Q masks produced similar masking to each other and the phase-scrambled masks (Qp and Mp) produced less masking. The results suggest that pattern masking is spatial frequency broadband in nature and sensitive to the phase alignments of spatial components.

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

2008-10-01

Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

Object Substitution Masking: When Does Mask Preview Work?

ERIC Educational Resources Information Center

Lim, Stephen Wee Hun; Chua, Fook K.

2008-01-01

When a target is enclosed by a 4-dot mask that persists after the target disappears, target identification is worse than it is when the mask terminates with the target. This masking effect is attributed to object substitution masking (OSM). Previewing the mask, however, attenuates OSM. This study investigated specific conditions under which mask…

The Nuclear Spectroscopic Telescope Array (NuSTAR)

NASA Technical Reports Server (NTRS)

Harrison, Fiona A.; Boggs, Steven; Christensen, Finn; Craig, William; Hailey, Charles; Stern, Daniel; Zhang, William; Angelini, Lorella; An, Hong Jun; Bhalereo, Varun;

Comparison of face masks in the bag-mask ventilation of a manikin.

PubMed

Redfern, D; Rassam, S; Stacey, M R; Mecklenburgh, J S

2006-02-01

We conducted a study investigating the effectiveness of four face mask designs in the bag-mask ventilation of a special manikin adapted to simulate a difficult airway. Forty-eight anaesthetists volunteered to bag-mask ventilate the manikin for 3 min with four different face masks. The primary outcome of the study was to calculate mean percentage leak from the face masks over 3 min. Anaesthetists were also asked to rate the face masks using a visual analogue score. The single-use scented intersurgical face mask had the lowest mean leak (20%). This was significantly lower than the mean leak from the single-use, cushioned 7,000 series Air Safety Ltd. face mask (24%) and the reusable silicone Laerdal face mask (27%) but not significantly lower than the mean leak from the reusable anatomical intersurgical face mask (23%). There was a large variation in both performance and satisfaction between anaesthetists with each design. This highlights the importance of having a variety of face masks available for emergency use.

Effectiveness of Comprehensive Health Education Combining Lifestyle Education and Hot Spa Bathing for Male White-Collar Employees: A Randomized Controlled Trial with 1-Year Follow-Up

PubMed Central

Kamioka, Hiroharu; Nakamura, Yosikazu; Okada, Shinpei; Kitayuguchi, Jun; Kamada, Masamitsu; Honda, Takuya; Matsui, Yuzuru; Mutoh, Yoshiteru

2009-01-01

Background Physical activity is known to prevent obesity and metabolic syndrome in middle-aged and elderly people; however, the effectiveness of a comprehensive health education program for male white-collar employees is uncertain. Methods Forty-three men volunteered to participate in this study and were randomly assigned into 2 groups. The intervention group participated in a 2-hour program comprising comprehensive health education and hot spa bathing, offered once every 2 weeks, in addition to individualized programs once a week, for 24 weeks. The control group received only general health guidance. We compared their lifestyle characteristics and physical and mental health criteria at baseline, immediately after the intervention, and 1 year after the end of the intervention. Results Rates of adherence to individualized programs were 60.0 ± 27.2% and 30.5 ± 29.6% at the end of the intervention and at 1 year after the end of the intervention, respectively. Significant (P < 0.05) interaction of criteria was observed for cluster of differentiation 4+ (CD4+) cells and the ratio of cluster of differentiation 4+ to 8+ (CD4/8) cells, which were used to represent the participants' immunological function. We divided the intervention group into 2 subgroups on the basis of their attendance. Among the resulting 3 groups, significant interaction of criteria was observed for CD4+ and CD4/8 cells. In addition, the high attendance group had the highest CD4+ count and CD4/8 ratio. Conclusions Participants who attended classes and/or performed the supplementary individualized programs tended to maintain their immunological function and to experience a decrease in body fat percentage. However, few effects were noted in participants with poor adherence, even in the intervention group. PMID:19687610

Oronasal Masks Require a Higher Pressure than Nasal and Nasal Pillow Masks for the Treatment of Obstructive Sleep Apnea.

PubMed

Deshpande, Sheetal; Joosten, Simon; Turton, Anthony; Edwards, Bradley A; Landry, Shane; Mansfield, Darren R; Hamilton, Garun S

2016-09-15

Oronasal masks are frequently used for continuous positive airway pressure (CPAP) treatment in patients with obstructive sleep apnea (OSA). The aim of this study was to (1) determine if CPAP requirements are higher for oronasal masks compared to nasal mask interfaces and (2) assess whether polysomnography and patient characteristics differed among mask preference groups. Retrospective analysis of all CPAP implementation polysomnograms between July 2013 and June 2014. Prescribed CPAP level, polysomnography results and patient data were compared according to mask type (n = 358). Oronasal masks were used in 46%, nasal masks in 35% and nasal pillow masks in 19%. There was no difference according to mask type for baseline apnea-hypopnea index (AHI), body mass index (BMI), waist or neck circumference. CPAP level was higher for oronasal masks, 12 (10-15.5) cm H2O compared to nasal pillow masks, 11 (8-12.5) cm H2O and nasal masks, 10 (8-12) cm H2O, p < 0.0001 (Median [interquartile range]). Oronasal mask type, AHI, age, and BMI were independent predictors of a higher CPAP pressure (p < 0.0005, adjusted R(2) = 0.26.). For patients with CPAP ≥ 15 cm H2O, there was an odds ratio of 4.5 (95% CI 2.5-8.0) for having an oronasal compared to a nasal or nasal pillow mask. Residual median AHI was higher for oronasal masks (11.3 events/h) than for nasal masks (6.4 events/h) and nasal pillows (6.7 events/h), p < 0.001. Compared to nasal mask types, oronasal masks are associated with higher CPAP pressures (particularly pressures ≥ 15 cm H2O) and a higher residual AHI. Further evaluation with a randomized control trial is required to definitively establish the effect of mask type on pressure requirements. A commentary on this article appears in this issue on page 1209. © 2016 American Academy of Sleep Medicine.

Evaluation of setup uncertainties for single-fraction SRS by comparing two different mask-creation methods

NASA Astrophysics Data System (ADS)

Baek, Jong Geun; Jang, Hyun Soo; Oh, Young Kee; Lee, Hyun Jeong; Kim, Eng Chan

2015-07-01

The purpose of this study was to evaluate the setup uncertainties for single-fraction stereotactic radiosurgery (SF-SRS) based on clinical data with two different mask-creation methods using pretreatment con-beam computed tomography imaging guidance. Dedicated frameless fixation Brain- LAB masks for 23 patients were created as a routine mask (R-mask) making method, as explained in the BrainLAB's user manual. Alternative masks (A-masks), which were created by modifying the cover range of the R-masks for the patient's head, were used for 23 patients. The systematic errors including these for each mask and stereotactic target localizer were analyzed, and the errors were calculated as the means ± standard deviations (SD) from the left-right (LR), superior-inferior (SI), anterior-posterior (AP), and yaw setup corrections. In addition, the frequencies of the threedimensional (3D) vector length were analyzed. The values of the mean setup corrections for the R-mask in all directions were < 0.7 mm and < 0.1°, whereas the magnitudes of the SDs were relatively large compared to the mean values. In contrast, the means and SDs of the A-mask were smaller than those for the R-mask with the exception of the SD in the AP direction. The means and SDs in the yaw rotational direction for the R-mask and the A-mask system were comparable. 3D vector shifts of larger magnitude occurred more frequently for the R-mask than the A-mask. The setup uncertainties for each mask with the stereotactic localizing system had an asymmetric offset towards the positive AP direction. The A-mask-creation method, which is capable of covering the top of the patient's head, is superior to that for the R-mask, so the use of the A-mask is encouraged for SF-SRS to reduce the setup uncertainties. Moreover, careful mask-making is required to prevent possible setup uncertainties.

Pressure Ulcer Incidence in Patients Wearing Nasal-Oral Versus Full-Face Noninvasive Ventilation Masks.

PubMed

Schallom, Marilyn; Cracchiolo, Lisa; Falker, Antoinette; Foster, Jennifer; Hager, JoAnn; Morehouse, Tamara; Watts, Peggy; Weems, Linda; Kollef, Marin

2015-07-01

Device-related pressure ulcers from noninvasive ventilation masks alter skin integrity and cause patients discomfort. To examine the incidence, location, and stage of pressure ulcers and patients' comfort with a nasal-oral mask compared with a full-face mask. A before-after study of a convenience sample of patients with noninvasive ventilation orders in 5 intensive care units was conducted. Two groups of 100 patients each received either the nasal-oral mask or the full-face mask. Skin was assessed before the mask was applied and every 12 hours after that or upon mask removal. Comfort levels were assessed every 12 hours on a Likert scale of 1 to 5 (1, most comfortable). A pressure ulcer developed in 20% of patients in the nasal-oral mask group and 2% of patients in the full-face mask group (P < .001). Comfort scores were significantly lower (more comfortable) with the full-face mask (mean [SD], 1.9 [1.1]) than with the nasal-oral mask (mean [SD], 2.7 [1.2], P < .001). Neither mean hours worn nor percentage adherence differed significantly: 28.9 (SD, 27.2) hours and 92% for full-face mask and 25 (SD, 20.7) and 92% for nasal-oral mask. No patients who had a pressure ulcer develop with the nasal-oral mask had a pressure ulcer develop with the full-face mask. The full-face mask resulted in significantly fewer pressure ulcers and was more comfortable for patients. The full-face mask is a reasonable alternative to traditional nasal-oral masks for patients receiving noninvasive ventilation. ©2015 American Association of Critical-Care Nurses.

Processing digital images and calculation of beam emittance (pepper-pot method for the Krion source)

NASA Astrophysics Data System (ADS)

Alexandrov, V. S.; Donets, E. E.; Nyukhalova, E. V.; Kaminsky, A. K.; Sedykh, S. N.; Tuzikov, A. V.; Philippov, A. V.

2016-12-01

Programs for the pre-processing of photographs of beam images on the mask based on Wolfram Mathematica and Origin software are described. Angles of rotation around the axis and in the vertical plane are taken into account in the generation of the file with image coordinates. Results of the emittance calculation by the Pep_emit program written in Visual Basic using the generated file in the test mode are presented.

Design Architecture of field-effect transistor with back gate electrode for biosensor application

NASA Astrophysics Data System (ADS)

Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

2016-07-01

This paper presents the preparation method of photolithography chrome mask design used in fabrication process of field-effect transistor with back gate biasing based biosensor. Initially, the chrome masks are designed by studying the process flow of the biosensor fabrication, followed by drawing of the actual chrome mask using the AutoCAD software. The overall width and length of the device is optimized at 16 mm and 16 mm, respectively. Fabrication processes of the biosensor required five chrome masks, which included source and drain formation mask, the back gate area formation mask, electrode formation mask, front gate area formation mask, and passivation area formation mask. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

NASA Astrophysics Data System (ADS)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-03-01

SEMATECH aims to identify and enable disruptive technologies to meet the ever-increasing demands of semiconductor high volume manufacturing (HVM). As such, a program was initiated in 2012 focused on high-speed e-beam defect inspection as a complement, and eventual successor, to bright field optical patterned defect inspection [1]. The primary goal is to enable a new technology to overcome the key gaps that are limiting modern day inspection in the fab; primarily, throughput and sensitivity to detect ultra-small critical defects. The program specifically targets revolutionary solutions based on massively parallel e-beam technologies, as opposed to incremental improvements to existing e-beam and optical inspection platforms. Wafer inspection is the primary target, but attention is also being paid to next generation mask inspection. During the first phase of the multi-year program multiple technologies were reviewed, a down-selection was made to the top candidates, and evaluations began on proof of concept systems. A champion technology has been selected and as of late 2014 the program has begun to move into the core technology maturation phase in order to enable eventual commercialization of an HVM system. Performance data from early proof of concept systems will be shown along with roadmaps to achieving HVM performance. SEMATECH's vision for moving from early-stage development to commercialization will be shown, including plans for development with industry leading technology providers.

Meeting critical gate linewidth control needs at the 65 nm node

NASA Astrophysics Data System (ADS)

Mahorowala, Arpan; Halle, Scott; Gabor, Allen; Chu, William; Barberet, Alexandra; Samuels, Donald; Abdo, Amr; Tsou, Len; Yan, Wendy; Iseda, Seiji; Patel, Kaushal; Dirahoui, Bachir; Nomura, Asuka; Ahsan, Ishtiaq; Azam, Faisal; Berg, Gary; Brendler, Andrew; Zimmerman, Jeffrey; Faure, Tom

2006-03-01

With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, not only at the chip level so that the chip performs as the circuit designers and device engineers had intended, but also at the wafer level so that more chips with the optimum power-to-performance ratio are manufactured. Achieving tight across-chip linewidth variation (ACLV) and chip mean variation (CMV) is possible only if the mask-making, lithography, and etching processes are all controlled to very tight specifications. This paper identifies the various ACLV and CMV components, describes their root causes, and discusses a methodology to quantify them. For example, the site-to-site ACLV component is divided into systematic and random sub-components. The systematic component of the variation is attributed in part to pattern density variation across the field, and variation in exposure dose across the slit. The paper demonstrates our team's success in achieving the tight gate CD tolerances required for 65 nm technology. Certain key challenges faced, and methods employed to overcome them are described. For instance, the use of dose-compensation strategies to correct the small but systematic CD variations measured across the wafer, is described. Finally, the impact of immersion lithography on both ACLV and CMV is briefly discussed.

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Development of an algorithm for monitoring pattern fidelity on photomasks for 0.2-μm technology and beyond based on light optical CD metrology tools

NASA Astrophysics Data System (ADS)

Schaetz, Thomas; Hay, Bernd; Walden, Lars; Ziegler, Wolfram

1999-04-01

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value and their linewidth variation is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. The size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomask by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source. The i-line illumination allows to resolve features down to 0.2 micrometers size with good repeatability.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

NASA Astrophysics Data System (ADS)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

Flavored Anesthetic Masks for Inhalational Induction in Children.

PubMed

Gupta, Aakriti; Mathew, Preethy Joseph; Bhardwaj, Neerja

2017-10-01

To evaluate the clinical efficacy of masking the odor of inhalational agents using fruit flavors on the anxiety behavior and compliance of children for inhalational induction. A prospective randomized double blind, placebo controlled study was conducted on 60 unpremedicated children in the age group of 4-12 y. Thirty children received anesthetic masks smeared with a flavor of child's choice while the other 30 children were induced using masks without flavor. Anxiety was assessed using modified Yale Pre-operative Anxiety Scale (mYPAS) in the pre-op room and during inhalational induction. Mask acceptance was graded by Induction Compliance Checklist (ICC). The cost-effectiveness of flavored anesthetic masks was compared to that of commercially available pre-scented masks. The baseline anxiety in the two groups was comparable. The number of children demonstrating high levels of anxiety at anesthetic induction was similar in flavored and non-flavored mask groups (p 0.45). The compliance to mask induction was also equally good (p 0.99). The authors found significant difference in the cost of flavored mask (INR 56.45 per mask) as compared to commercially available pre-scented masks (INR 660 per mask). The authors observed a placebo effect that reduced the pre-op anxiety in the control group which probably made the quality of induction equivalent with flavored and non-flavored masks. Therefore, using a flavored anesthetic mask is cost-effective than using a commercially available pre-scented mask.

Comparison of Ventilation With One-Handed Mask Seal With an Intraoral Mask Versus Conventional Cuffed Face Mask in a Cadaver Model: A Randomized Crossover Trial.

PubMed

Amack, Andrew J; Barber, Gary A; Ng, Patrick C; Smith, Thomas B; April, Michael D

2017-01-01

We compare received minute volume with an intraoral mask versus conventional cuffed face mask among medics obtaining a 1-handed mask seal on a cadaver model. This study comprised a randomized crossover trial of adult US Army combat medic volunteers participating in a cadaver laboratory as part of their training. We randomized participants to obtain a 1-handed mask seal during ventilation of a fresh unembalmed cadaver, first using either an intraoral airway device or conventional cuffed face mask. Participants obtained a 1-handed mask seal while a ventilator delivered 10 standardized 750-mL breaths during 1 minute. After a 5-minute rest period, they repeated the study with the alternative mask. The primary outcome measure was received minute volume as measured by a respirometer. Of 27 recruited participants, all completed the study. Median received minute volume was higher with the intraoral mask compared with conventional cuffed mask by 1.7 L (95% confidence interval 1.0 to 1.9 L; P<.001). The intraoral mask resulted in greater received minute volume received compared with conventional cuffed face mask during ventilation with a 1-handed mask seal in a cadaver model. The intraoral mask may prove a useful airway adjunct for ventilation. Copyright © 2016 American College of Emergency Physicians. Published by Elsevier Inc. All rights reserved.

Car Builder: Design, Construct and Test Your Own Cars. School Version with Lesson Plans. [CD-ROM].

ERIC Educational Resources Information Center

Highsmith, Joni Bitman

Car Builder is a scientific CD-ROM-based simulation program that lets students design, construct, modify, test, and compare their own cars. Students can design sedans, four-wheel-drive vehicles, vans, sport cars, and hot rods. They may select for aerodynamics, power, and racing ability, or economic and fuel efficiency. It is a program that teaches…

A face versus non-face context influences amygdala responses to masked fearful eye whites.

PubMed

Kim, M Justin; Solomon, Kimberly M; Neta, Maital; Davis, F Caroline; Oler, Jonathan A; Mazzulla, Emily C; Whalen, Paul J

2016-12-01

The structure of the mask stimulus is crucial in backward masking studies and we recently demonstrated such an effect when masking faces. Specifically, we showed that activity of the amygdala is increased to fearful facial expressions masked with neutral faces and decreased to fearful expressions masked with a pattern mask-but critically both masked conditions discriminated fearful expressions from happy expressions. Given this finding, we sought to test whether masked fearful eye whites would produce a similar profile of amygdala response in a face vs non-face context. During functional magnetic resonance imaging scanning sessions, 30 participants viewed fearful or happy eye whites masked with either neutral faces or pattern images. Results indicated amygdala activity was increased to fearful vs happy eye whites in the face mask condition, but decreased to fearful vs happy eye whites in the pattern mask condition-effectively replicating and expanding our previous report. Our data support the idea that the amygdala is responsive to fearful eye whites, but that the nature of this activity observed in a backward masking design depends on the mask stimulus. © The Author (2016). Published by Oxford University Press.

Masking with faces in central visual field under a variety of temporal schedules.

PubMed

Daar, Marwan; Wilson, Hugh R

2015-11-01

With a few exceptions, previous studies have explored masking using either a backward mask or a common onset trailing mask, but not both. In a series of experiments, we demonstrate the use of faces in central visual field as a viable method to study the relationship between these two types of mask schedule. We tested observers in a two alternative forced choice face identification task, where both target and mask comprised synthetic faces, and show that a simple model can successfully predict masking across a variety of masking schedules ranging from a backward mask to a common onset trailing mask and a number of intermediate variations. Our data are well accounted for by a window of sensitivity to mask interference that is centered at around 100 ms. Copyright © 2015 Elsevier Ltd. All rights reserved.

CD4 Counts at Entry to HIV Care in Mexico for Patients under the “Universal Antiretroviral Treatment Program for the Uninsured Population,” 2007–2014

PubMed Central

Hernández-Romieu, Alfonso C.; del Rio, Carlos; Hernández-Ávila, Juan Eugenio; Lopez-Gatell, Hugo; Izazola-Licea, José Antonio; Uribe Zúñiga, Patricia; Hernández-Ávila, Mauricio

2016-01-01

In Mexico, public health services have provided universal access to antiretroviral therapy (ART) since 2004. For individuals receiving HIV care in public healthcare facilities, the data are limited regarding CD4 T-lymphocyte counts (CD4e) at the time of entry into care. Relevant population-based estimates of CD4e are needed to inform strategies to maximize the impact of Mexico’s national ART program, and may be applicable to other countries implementing universal HIV treatment programs. For this study, we retrospectively analyzed the CD4e of persons living with HIV and receiving care at state public health facilities from 2007 to 2014, comparing CD4e by demographic characteristics and the marginalization index of the state where treatment was provided, and assessing trends in CD4e over time. Our sample included 66,947 individuals who entered into HIV care between 2007 and 2014, of whom 79% were male. During the study period, the male-to-female ratio increased from 3.0 to 4.3, reflecting the country's HIV epidemic; the median age at entry decreased from 34 years to 32 years. Overall, 48.6% of individuals entered care with a CD4≤200 cells/μl, ranging from 42.2% in states with a very low marginalization index to 52.8% in states with a high marginalization index, and from 38.9% among individuals aged 18–29 to 56.5% among those older than 50. The adjusted geometric mean (95% confidence interval) CD4e increased among males from 135 (131,142) cells/μl in 2007 to 148 (143,155) cells/μl in 2014 (p-value<0.0001); no change was observed among women, with a geometric mean of 178 (171,186) and 171 (165,183) in 2007 and 2014, respectively. There have been important gains in access to HIV care and treatment; however, late entry into care remains an important barrier in achieving optimal outcomes of ART in Mexico. The geographic, socioeconomic, and demographic differences observed reflect important inequities in timely access to HIV prevention, care, and treatment services, and highlight the need to develop contextual and culturally appropriate prevention and HIV testing strategies and linkage programs. PMID:27027505

CD4 Counts at Entry to HIV Care in Mexico for Patients under the "Universal Antiretroviral Treatment Program for the Uninsured Population," 2007-2014.

PubMed

Hernández-Romieu, Alfonso C; del Rio, Carlos; Hernández-Ávila, Juan Eugenio; Lopez-Gatell, Hugo; Izazola-Licea, José Antonio; Uribe Zúñiga, Patricia; Hernández-Ávila, Mauricio

2016-01-01

In Mexico, public health services have provided universal access to antiretroviral therapy (ART) since 2004. For individuals receiving HIV care in public healthcare facilities, the data are limited regarding CD4 T-lymphocyte counts (CD4e) at the time of entry into care. Relevant population-based estimates of CD4e are needed to inform strategies to maximize the impact of Mexico's national ART program, and may be applicable to other countries implementing universal HIV treatment programs. For this study, we retrospectively analyzed the CD4e of persons living with HIV and receiving care at state public health facilities from 2007 to 2014, comparing CD4e by demographic characteristics and the marginalization index of the state where treatment was provided, and assessing trends in CD4e over time. Our sample included 66,947 individuals who entered into HIV care between 2007 and 2014, of whom 79% were male. During the study period, the male-to-female ratio increased from 3.0 to 4.3, reflecting the country's HIV epidemic; the median age at entry decreased from 34 years to 32 years. Overall, 48.6% of individuals entered care with a CD4≤200 cells/μl, ranging from 42.2% in states with a very low marginalization index to 52.8% in states with a high marginalization index, and from 38.9% among individuals aged 18-29 to 56.5% among those older than 50. The adjusted geometric mean (95% confidence interval) CD4e increased among males from 135 (131,142) cells/μl in 2007 to 148 (143,155) cells/μl in 2014 (p-value<0.0001); no change was observed among women, with a geometric mean of 178 (171,186) and 171 (165,183) in 2007 and 2014, respectively. There have been important gains in access to HIV care and treatment; however, late entry into care remains an important barrier in achieving optimal outcomes of ART in Mexico. The geographic, socioeconomic, and demographic differences observed reflect important inequities in timely access to HIV prevention, care, and treatment services, and highlight the need to develop contextual and culturally appropriate prevention and HIV testing strategies and linkage programs.

Putting a Medical Library Online: Phase III--Remote Access to CD-ROMs.

ERIC Educational Resources Information Center

Kittle, Paul

1989-01-01

Describes the implementation of a project that provides dial-up access to MEDLINE on remote optical data disk (CD-ROM) using software that enables callers to use programs like Wordstar, Lotus, and dBase. Highlights include networking CD-ROM databases, hardware considerations, advantages and disadvantages of remote access, and future plans. A…

Evaluation of a new pediatric positive airway pressure mask.

PubMed

Kushida, Clete A; Halbower, Ann C; Kryger, Meir H; Pelayo, Rafael; Assalone, Valerie; Cardell, Chia-Yu; Huston, Stephanie; Willes, Leslee; Wimms, Alison J; Mendoza, June

2014-09-15

The choice and variety of pediatric masks for continuous positive airway pressure (CPAP) is limited in the US. Therefore, clinicians often prescribe modified adult masks. Until recently a mask for children aged < 7 years was not available. This study evaluated apnea-hypopnea index (AHI) equivalence and acceptability of a new pediatric CPAP mask for children aged 2-7 years (Pixi; ResMed Ltd, Sydney, Australia). Patients aged 2-7 years were enrolled and underwent in-lab baseline polysomnography (PSG) using their previous mask, then used their previous mask and the VPAP III ST-A flow generator for ≥ 10 nights at home. Thereafter, patients switched to the Pixi mask for ≥ 2 nights before returning for a PSG during PAP therapy via the Pixi mask. Patients then used the Pixi mask at home for ≥ 21 nights. Patients and their parents/guardians returned to the clinic for follow-up and provided feedback on the Pixi mask versus their previous mask. AHI with the Pixi mask was 1.1 ± 1.5/h vs 2.6 ± 5.4/h with the previous mask (p = 0.3538). Parents rated the Pixi mask positively for: restfulness of the child's sleep, trouble in getting the child to sleep, and trouble in having the child stay asleep. The Pixi mask was also rated highly for leaving fewer or no marks on the upper lip and under the child's ears, and being easy to remove. The Pixi mask is suitable for children aged 2-7 years and provides an alternative to other masks available for PAP therapy in this age group. © 2014 American Academy of Sleep Medicine.

Adaptation to different noninvasive ventilation masks in critically ill patients*

PubMed Central

da Silva, Renata Matos; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

2013-01-01

OBJECTIVE: To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. METHODS: An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. RESULTS: We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. CONCLUSIONS: In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed. PMID:24068269

Adaptation to different noninvasive ventilation masks in critically ill patients.

PubMed

Silva, Renata Matos da; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

2013-01-01

To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed.

Oronasal Masks Require a Higher Pressure than Nasal and Nasal Pillow Masks for the Treatment of Obstructive Sleep Apnea

PubMed Central

Deshpande, Sheetal; Joosten, Simon; Turton, Anthony; Edwards, Bradley A.; Landry, Shane; Mansfield, Darren R.; Hamilton, Garun S.

2016-01-01

Study Objectives: Oronasal masks are frequently used for continuous positive airway pressure (CPAP) treatment in patients with obstructive sleep apnea (OSA). The aim of this study was to (1) determine if CPAP requirements are higher for oronasal masks compared to nasal mask interfaces and (2) assess whether polysomnography and patient characteristics differed among mask preference groups. Methods: Retrospective analysis of all CPAP implementation polysomnograms between July 2013 and June 2014. Prescribed CPAP level, polysomnography results and patient data were compared according to mask type (n = 358). Results: Oronasal masks were used in 46%, nasal masks in 35% and nasal pillow masks in 19%. There was no difference according to mask type for baseline apnea-hypopnea index (AHI), body mass index (BMI), waist or neck circumference. CPAP level was higher for oronasal masks, 12 (10–15.5) cm H2O compared to nasal pillow masks, 11 (8–12.5) cm H2O and nasal masks, 10 (8–12) cm H2O, p < 0.0001 (Median [interquartile range]). Oronasal mask type, AHI, age, and BMI were independent predictors of a higher CPAP pressure (p < 0.0005, adjusted R2 = 0.26.). For patients with CPAP ≥ 15 cm H2O, there was an odds ratio of 4.5 (95% CI 2.5–8.0) for having an oronasal compared to a nasal or nasal pillow mask. Residual median AHI was higher for oronasal masks (11.3 events/h) than for nasal masks (6.4 events/h) and nasal pillows (6.7 events/h), p < 0.001. Conclusions: Compared to nasal mask types, oronasal masks are associated with higher CPAP pressures (particularly pressures ≥ 15 cm H2O) and a higher residual AHI. Further evaluation with a randomized control trial is required to definitively establish the effect of mask type on pressure requirements. Commentary: A commentary on this article appears in this issue on page 1209. Citation: Deshpande S, Joosten S, Turton A, Edwards BA, Landry S, Mansfield DR, Hamilton GS. Oronasal masks require a higher pressure than nasal and nasal pillow masks for the treatment of obstructive sleep apnea. J Clin Sleep Med 2016;12(9):1263–1268. PMID:27448430

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webb, Aaron P.; Carlson, Charles T.; Honan, Michael

A plurality of masks is attached to the underside of a mask frame. This attachment is made such that each mask can independently move relative to the mask frame in three directions. This relative movement allows each mask to adjust its position to align with respective alignment pins disposed on a working surface. In one embodiment, each mask is attached to the mask frame using fasteners, where the fasteners have a shaft with a diameter smaller than the diameter of the mounting hole disposed on the mask. A bias element may be used to allow relative movement between the maskmore » and the mask frame in the vertical direction. Each mask may also have kinematic features to mate with the respective alignment pins on the working surface.« less

[Increased expressions of peripheral PD-1+ lymphocytes and CD4+CD25+FOXP3+ T cells in gastric adenocarcinoma patients].

PubMed

Li, Hao; Li, Songyan; Hu, Shidong; Zou, Guijun; Hu, Zilong; Wei, Huahua; Wang, Yufeng; Du, Xiaohui

2017-01-01

Objective To detect the frequencies of peripheral programmed death-1 + (PD-1 + ) lymphocytes and CD4 + CD25 + FOXP3 + regulatory T cells in patients with gastric adenocarcinoma. Methods The study enrolled 29 patients with gastric adenocarcinoma and 29 age- and sex-matched healthy controls. Frequencies of PD-1 + lymphocytes and CD4 + CD25 + FOXP3 + regulatory T cells were detected using flow cytometry. Results The number of PD-1 + lymphocytes and CD4 + CD25 + FOXP3 + regulatory T cells in peripheral blood was higher in patients with gastric adenocarcinoma than that in the control group. Moreover, linear correlation analysis indicated a positive correlation between PD-1 expression and frequency of CD4 + CD25 + FOXP3 + regulatory T cells in peripheral blood of the patients. Conclusion Gastric adenocarcinoma patients present with increased PD-1 + lymphocytes and CD4 + CD25 + FOXP3 + regulatory T cells in the peripheral blood.

Effector CD8 T cells dedifferentiate into long-lived memory cells.

PubMed

Youngblood, Ben; Hale, J Scott; Kissick, Haydn T; Ahn, Eunseon; Xu, Xiaojin; Wieland, Andreas; Araki, Koichi; West, Erin E; Ghoneim, Hazem E; Fan, Yiping; Dogra, Pranay; Davis, Carl W; Konieczny, Bogumila T; Antia, Rustom; Cheng, Xiaodong; Ahmed, Rafi

2017-12-21

Memory CD8 T cells that circulate in the blood and are present in lymphoid organs are an essential component of long-lived T cell immunity. These memory CD8 T cells remain poised to rapidly elaborate effector functions upon re-exposure to pathogens, but also have many properties in common with naive cells, including pluripotency and the ability to migrate to the lymph nodes and spleen. Thus, memory cells embody features of both naive and effector cells, fuelling a long-standing debate centred on whether memory T cells develop from effector cells or directly from naive cells. Here we show that long-lived memory CD8 T cells are derived from a subset of effector T cells through a process of dedifferentiation. To assess the developmental origin of memory CD8 T cells, we investigated changes in DNA methylation programming at naive and effector cell-associated genes in virus-specific CD8 T cells during acute lymphocytic choriomeningitis virus infection in mice. Methylation profiling of terminal effector versus memory-precursor CD8 T cell subsets showed that, rather than retaining a naive epigenetic state, the subset of cells that gives rise to memory cells acquired de novo DNA methylation programs at naive-associated genes and became demethylated at the loci of classically defined effector molecules. Conditional deletion of the de novo methyltransferase Dnmt3a at an early stage of effector differentiation resulted in reduced methylation and faster re-expression of naive-associated genes, thereby accelerating the development of memory cells. Longitudinal phenotypic and epigenetic characterization of the memory-precursor effector subset of virus-specific CD8 T cells transferred into antigen-free mice revealed that differentiation to memory cells was coupled to erasure of de novo methylation programs and re-expression of naive-associated genes. Thus, epigenetic repression of naive-associated genes in effector CD8 T cells can be reversed in cells that develop into long-lived memory CD8 T cells while key effector genes remain demethylated, demonstrating that memory T cells arise from a subset of fate-permissive effector T cells.

GMP-based CD133+ cells isolation maintains progenitor angiogenic properties and enhances standardization in cardiovascular cell therapy

PubMed Central

Gaipa, Giuseppe; Tilenni, Manuela; Straino, Stefania; Burba, Ilaria; Zaccagnini, Germana; Belotti, Daniela; Biagi, Ettore; Valentini, Marco; Perseghin, Paolo; Parma, Matteo; Campli, Cristiana Di; Biondi, Andrea; Capogrossi, Maurizio C; Pompilio, Giulio; Pesce, Maurizio

2010-01-01

Abstract The aim of the present study was to develop and validate a good manufacturing practice (GMP) compliant procedure for the preparation of bone marrow (BM) derived CD133+ cells for cardiovascular repair. Starting from available laboratory protocols to purify CD133+ cells from human cord blood, we implemented these procedures in a GMP facility and applied quality control conditions defining purity, microbiological safety and vitality of CD133+ cells. Validation of CD133+ cells isolation and release process were performed according to a two-step experimental program comprising release quality checking (step 1) as well as ‘proofs of principle’ of their phenotypic integrity and biological function (step 2). This testing program was accomplished using in vitro culture assays and in vivo testing in an immunosuppressed mouse model of hindlimb ischemia. These criteria and procedures were successfully applied to GMP production of CD133+ cells from the BM for an ongoing clinical trial of autologous stem cells administration into patients with ischemic cardiomyopathy. Our results show that GMP implementation of currently available protocols for CD133+ cells selection is feasible and reproducible, and enables the production of cells having a full biological potential according to the most recent quality requirements by European Regulatory Agencies. PMID:19627397

Distribution of cadmium in leg muscle and liver of game birds from Serbia

NASA Astrophysics Data System (ADS)

Nikolić, D.; Đinović-Stojanović, J.; Stefanović, S.; Radičević, T.; Trbović, D.; Spirić, D.; Janković, S.

2017-09-01

The aim of this study was to present the distribution of cadmium (Cd) levels in leg muscle and liver of game birds. Samples (n=464) of: pheasants (n=182), mallards (n=25), Eurasian jay (n=7), partridges (n=5), woodcocks (n=8) and common quail (n=5) were collected during regular hunting seasons within the Serbian National Residue Monitoring Program from 2013 to 2016. Analysis of Cd was performed by ICP-MS. In all liver samples, Cd levels were above the limit of detection (LOD=0.001 mg/kg) while in 66.4% of muscle samples, Cd was detected. Statistical analysis showed significant differences between Cd levels in leg muscle and liver of woodcocks and others game birds. The highest mean Cd level was observed in muscle samples of woodcocks (0.042 mg/kg). The lowest mean Cd levels in liver were observed in common quails (0.130 mg/kg) and mallards (0.160 mg/kg) while the highest levels were measured in woodcocks (1.247 mg/kg) and pheasants (0.262 mg/kg). During four years of the Serbian National Residue Monitoring Program, leg muscle samples of woodcocks (n=3), liver samples of pheasants (n=23), woodcocks (n=6) and mallards (n=3) exceeded the maximum residue limit (MRL).

Evaluation of a New Pediatric Positive Airway Pressure Mask

PubMed Central

Kushida, Clete A.; Halbower, Ann C.; Kryger, Meir H.; Pelayo, Rafael; Assalone, Valerie; Cardell, Chia-Yu; Huston, Stephanie; Willes, Leslee; Wimms, Alison J.; Mendoza, June

2014-01-01

Study Objectives: The choice and variety of pediatric masks for continuous positive airway pressure (CPAP) is limited in the US. Therefore, clinicians often prescribe modified adult masks. Until recently a mask for children aged < 7 years was not available. This study evaluated apnea-hypopnea index (AHI) equivalence and acceptability of a new pediatric CPAP mask for children aged 2-7 years (Pixi; ResMed Ltd, Sydney, Australia). Methods: Patients aged 2-7 years were enrolled and underwent in-lab baseline polysomnography (PSG) using their previous mask, then used their previous mask and the VPAP III ST-A flow generator for ≥ 10 nights at home. Thereafter, patients switched to the Pixi mask for ≥ 2 nights before returning for a PSG during PAP therapy via the Pixi mask. Patients then used the Pixi mask at home for ≥ 21 nights. Patients and their parents/guardians returned to the clinic for follow-up and provided feedback on the Pixi mask versus their previous mask. Results: AHI with the Pixi mask was 1.1 ± 1.5/h vs 2.6 ± 5.4/h with the previous mask (p = 0.3538). Parents rated the Pixi mask positively for: restfulness of the child's sleep, trouble in getting the child to sleep, and trouble in having the child stay asleep. The Pixi mask was also rated highly for leaving fewer or no marks on the upper lip and under the child's ears, and being easy to remove. Conclusions: The Pixi mask is suitable for children aged 2-7 years and provides an alternative to other masks available for PAP therapy in this age group. Citation: Kushida CA, Halbower AC, Kryger MH, Pelayo R, Assalone V, Cardell CY, Huston S, Willes L, Wimms AJ, Mendoza J. Evaluation of a new pediatric positive airway pressure mask. J Clin Sleep Med 2014;10(9):979-984. PMID:25142768

Disaster Planning Guidelines for Fire Chiefs.

DTIC Science & Technology

1980-07-01

book Money Receipts e I pad white squared paper * I roll masking tape (8 X 13) (-" × 60yds) * 3 spring clips * 3 felt tip markers (red, e I pkg. freezer...Avenue COMMIT EE HaRm Washington. D.C. 20012 C.Holy Redeemer Rectory (202) 723-0800 C. Neil Molenaar 9705 Summit Avenue Director, Domestic Programs

Techo Tensions in an Athabascan Indian Classroom.

ERIC Educational Resources Information Center

Brown, Stephen G.

A compositionist teaching high school on an Athabascan Indian Reservation near Anchorage, Alaska, encountered considerable resistance from his students when attempting to see them through a college-prep program. Their initial hostility toward him masked their deep need for an adult role model who was not abusive, neglectful, or alcoholic. It was a…

Two-Year Impacts of Opportunity NYC by Families' Likelihood of Earning Rewards

ERIC Educational Resources Information Center

Berg, Juliette; Morris, Pamela; Aber, J. Lawrence

2011-01-01

Experimental approaches can help disentangle the impacts of policies from the effects of individual characteristics, but the heterogeneity of implementation inherent in studies with complex program designs may mask average treatment impacts (Morris & Hendra, 2009). In the case of the Opportunity NYC-Family Rewards (ONYC-Family Rewards),…

Coded mask telescopes for X-ray astronomy

NASA Astrophysics Data System (ADS)

Skinner, G. K.; Ponman, T. J.

1987-04-01

The principle of the coded mask techniques are discussed together with the methods of image reconstruction. The coded mask telescopes built at the University of Birmingham, including the SL 1501 coded mask X-ray telescope flown on the Skylark rocket and the Coded Mask Imaging Spectrometer (COMIS) projected for the Soviet space station Mir, are described. A diagram of a coded mask telescope and some designs for coded masks are included.

Quantitative evaluation of manufacturability and performance for ILT produced mask shapes using a single-objective function

NASA Astrophysics Data System (ADS)

Choi, Heon; Wang, Wei-long; Kallingal, Chidam

2015-03-01

The continuous scaling of semiconductor devices is quickly outpacing the resolution improvements of lithographic exposure tools and processes. This one-sided progression has pushed optical lithography to its limits, resulting in the use of well-known techniques such as Sub-Resolution Assist Features (SRAF's), Source-Mask Optimization (SMO), and double-patterning, to name a few. These techniques, belonging to a larger category of Resolution Enhancement Techniques (RET), have extended the resolution capabilities of optical lithography at the cost of increasing mask complexity, and therefore cost. One such technique, called Inverse Lithography Technique (ILT), has attracted much attention for its ability to produce the best possible theoretical mask design. ILT treats the mask design process as an inverse problem, where the known transformation from mask to wafer is carried out backwards using a rigorous mathematical approach. One practical problem in the application of ILT is the resulting contour-like mask shapes that must be "Manhattanized" (composed of straight edges and 90-deg corners) in order to produce a manufacturable mask. This conversion process inherently degrades the mask quality as it is a departure from the "optimal mask" represented by the continuously curved shapes produced by ILT. However, simpler masks composed of longer straight edges reduce the mask cost as it lowers the shot count and saves mask writing time during mask fabrication, resulting in a conflict between manufacturability and performance for ILT produced masks1,2. In this study, various commonly used metrics will be combined into an objective function to produce a single number to quantitatively measure a particular ILT solution's ability to balance mask manufacturability and RET performance. Several metrics that relate to mask manufacturing costs (i.e. mask vertex count, ILT computation runtime) are appropriately weighted against metrics that represent RET capability (i.e. process-variation band, edge-placement-error) in order to reflect the desired practical balance. This well-defined scoring system allows direct comparison of several masks with varying degrees of complexities. Using this method, ILT masks produced with increasing mask constraints will be compared, and it will be demonstrated that using the smallest minimum width for mask shapes does not always produce the optimal solution.

Aerospace Nickel-cadmium Cell Verification

NASA Technical Reports Server (NTRS)

Manzo, Michelle A.; Strawn, D. Michael; Hall, Stephen W.

2001-01-01

During the early years of satellites, NASA successfully flew "NASA-Standard" nickel-cadmium (Ni-Cd) cells manufactured by GE/Gates/SAFF on a variety of spacecraft. In 1992 a NASA Battery Review Board determined that the strategy of a NASA Standard Cell and Battery Specification and the accompanying NASA control of a standard manufacturing control document (MCD) for Ni-Cd cells and batteries was unwarranted. As a result of that determination, standards were abandoned and the use of cells other than the NASA Standard was required. In order to gain insight into the performance and characteristics of the various aerospace Ni-Cd products available, tasks were initiated within the NASA Aerospace Flight Battery Systems Program that involved the procurement and testing of representative aerospace Ni-Cd cell designs. A standard set of test conditions was established in order to provide similar information about the products from various vendors. The objective of this testing was to provide independent verification of representative commercial flight cells available in the marketplace today. This paper will provide a summary of the verification tests run on cells from various manufacturers: Sanyo 35 Ampere-hour (Ali) standard and 35 Ali advanced Ni-Cd cells, SAFr 50 Ah Ni-Cd cells and Eagle-Picher 21 Ali Magnum and 21 Ali Super Ni-CdTM cells from Eagle-Picher were put through a full evaluation. A limited number of 18 and 55 Ali cells from Acme Electric were also tested to provide an initial evaluation of the Acme aerospace cell designs. Additionally, 35 Ali aerospace design Ni-MH cells from Sanyo were evaluated under the standard conditions established for this program. Ile test program is essentially complete. The cell design parameters, the verification test plan and the details of the test result will be discussed.

Short-term Forecasting of the Prevalence of Trachoma: Expert Opinion, Statistical Regression, versus Transmission Models

PubMed Central

Liu, Fengchen; Porco, Travis C.; Amza, Abdou; Kadri, Boubacar; Nassirou, Baido; West, Sheila K.; Bailey, Robin L.; Keenan, Jeremy D.; Solomon, Anthony W.; Emerson, Paul M.; Gambhir, Manoj; Lietman, Thomas M.

2015-01-01

Background Trachoma programs rely on guidelines made in large part using expert opinion of what will happen with and without intervention. Large community-randomized trials offer an opportunity to actually compare forecasting methods in a masked fashion. Methods The Program for the Rapid Elimination of Trachoma trials estimated longitudinal prevalence of ocular chlamydial infection from 24 communities treated annually with mass azithromycin. Given antibiotic coverage and biannual assessments from baseline through 30 months, forecasts of the prevalence of infection in each of the 24 communities at 36 months were made by three methods: the sum of 15 experts’ opinion, statistical regression of the square-root-transformed prevalence, and a stochastic hidden Markov model of infection transmission (Susceptible-Infectious-Susceptible, or SIS model). All forecasters were masked to the 36-month results and to the other forecasts. Forecasts of the 24 communities were scored by the likelihood of the observed results and compared using Wilcoxon’s signed-rank statistic. Findings Regression and SIS hidden Markov models had significantly better likelihood than community expert opinion (p = 0.004 and p = 0.01, respectively). All forecasts scored better when perturbed to decrease Fisher’s information. Each individual expert’s forecast was poorer than the sum of experts. Interpretation Regression and SIS models performed significantly better than expert opinion, although all forecasts were overly confident. Further model refinements may score better, although would need to be tested and compared in new masked studies. Construction of guidelines that rely on forecasting future prevalence could consider use of mathematical and statistical models. PMID:26302380

Short-term Forecasting of the Prevalence of Trachoma: Expert Opinion, Statistical Regression, versus Transmission Models.

PubMed

Liu, Fengchen; Porco, Travis C; Amza, Abdou; Kadri, Boubacar; Nassirou, Baido; West, Sheila K; Bailey, Robin L; Keenan, Jeremy D; Solomon, Anthony W; Emerson, Paul M; Gambhir, Manoj; Lietman, Thomas M

2015-08-01

Trachoma programs rely on guidelines made in large part using expert opinion of what will happen with and without intervention. Large community-randomized trials offer an opportunity to actually compare forecasting methods in a masked fashion. The Program for the Rapid Elimination of Trachoma trials estimated longitudinal prevalence of ocular chlamydial infection from 24 communities treated annually with mass azithromycin. Given antibiotic coverage and biannual assessments from baseline through 30 months, forecasts of the prevalence of infection in each of the 24 communities at 36 months were made by three methods: the sum of 15 experts' opinion, statistical regression of the square-root-transformed prevalence, and a stochastic hidden Markov model of infection transmission (Susceptible-Infectious-Susceptible, or SIS model). All forecasters were masked to the 36-month results and to the other forecasts. Forecasts of the 24 communities were scored by the likelihood of the observed results and compared using Wilcoxon's signed-rank statistic. Regression and SIS hidden Markov models had significantly better likelihood than community expert opinion (p = 0.004 and p = 0.01, respectively). All forecasts scored better when perturbed to decrease Fisher's information. Each individual expert's forecast was poorer than the sum of experts. Regression and SIS models performed significantly better than expert opinion, although all forecasts were overly confident. Further model refinements may score better, although would need to be tested and compared in new masked studies. Construction of guidelines that rely on forecasting future prevalence could consider use of mathematical and statistical models. Clinicaltrials.gov NCT00792922.

Contralateral Masking in Bilateral Cochlear Implant Patients: A Model of Medial Olivocochlear Function Loss

PubMed Central

Aronoff, Justin M.; Padilla, Monica; Fu, Qian-Jie; Landsberger, David M.

2015-01-01

Contralateral masking is the phenomenon where a masker presented to one ear affects the ability to detect a signal in the opposite ear. For normal hearing listeners, contralateral masking results in masking patterns that are both sharper and dramatically smaller in magnitude than ipsilateral masking. The goal of this study was to investigate whether medial olivocochlear (MOC) efferents are needed for the sharpness and relatively small magnitude of the contralateral masking function. To do this, bilateral cochlear implant patients were tested because, by directly stimulating the auditory nerve, cochlear implants circumvent the effects of the MOC efferents. The results indicated that, as with normal hearing listeners, the contralateral masking function was sharper than the ipsilateral masking function. However, although there was a reduction in the magnitude of the contralateral masking function compared to the ipsilateral masking function, it was relatively modest. This is in sharp contrast to the results of normal hearing listeners where the magnitude of the contralateral masking function is greatly reduced. These results suggest that MOC function may not play a large role in the sharpness of the contralateral masking function but may play a considerable role in the magnitude of the contralateral masking function. PMID:25798581

Calibration of a Spatial-Temporal Discrimination Model from Forward, Simultaneous, and Backward Masking

NASA Technical Reports Server (NTRS)

Ahumada, Albert J.; Beard, B. L.; Stone, Leland (Technical Monitor)

1997-01-01

We have been developing a simplified spatial-temporal discrimination model similar to our simplified spatial model in that masking is assumed to be a function of the local visible contrast energy. The overall spatial-temporal sensitivity of the model is calibrated to predict the detectability of targets on a uniform background. To calibrate the spatial-temporal integration functions that define local visible contrast energy, spatial-temporal masking data are required. Observer thresholds were measured (2IFC) for the detection of a 12 msec target stimulus in the presence of a 700 msec mask. Targets were 1, 3 or 9 c/deg sine wave gratings. Masks were either one of these gratings or two of them combined. The target was presented in 17 temporal positions with respect to the mask, including positions before, during and after the mask. Peak masking was found near mask onset and offset for 1 and 3 c/deg targets, while masking effects were more nearly uniform during the mask for the 9 c/deg target. As in the purely spatial case, the simplified model can not predict all the details of masking as a function of masking component spatial frequencies, but overall the prediction errors are small.

SLC injector modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanerfeld, H; Herrmannsfeldt, W.B.; James, M.B.

1985-03-01

The injector for the Stanford Linear Collider is being studied using the fully electromagnetic particle-in-cell program MASK. The program takes account of cylindrically symmetrical rf fields from the external source, as well as fields produced by the beam and dc magnetic fields. It calculates the radial and longitudinal motion of electrons and plots their positions in various planes in phase space. Bunching parameters can be optimized and insights into the bunching process and emittance growth have been gained. The results of the simulations are compared to the experimental results.

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Nasal mask ventilation is better than face mask ventilation in edentulous patients.

PubMed

Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

2016-01-01

Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients.

A new suction mask to reduce leak during neonatal resuscitation: a manikin study.

PubMed

Lorenz, Laila; Maxfield, Dominic A; Dawson, Jennifer A; Kamlin, C Omar F; McGrory, Lorraine; Thio, Marta; Donath, Susan M; Davis, Peter G

2016-09-01

Leak around the face mask is a common problem during neonatal resuscitation. A newly designed face mask using a suction system to enhance contact between the mask and the infant's face might reduce leak and improve neonatal resuscitation. The aim of the study is to determine whether leak is reduced using the suction mask (Resusi-sure mask) compared with a conventional mask (Laerdal Silicone mask) in a manikin model. Sixty participants from different professional categories (neonatal consultants, fellows, registrars, nurses, midwives and students) used each face mask in a random order to deliver 2 min of positive pressure ventilation to a manikin. Delivered airway pressures were measured using a pressure line. Inspiratory and expiratory flows were measured using a flow sensor, and expiratory tidal volumes and mask leaks were derived from these values. A median (IQR) leak of 12.1 (0.6-39.0)% was found with the conventional mask compared with 0.7 (0.2-4.6)% using the suction mask (p=0.002). 50% of the participants preferred to use the suction mask and 38% preferred to use the conventional mask. There was no correlation between leak and operator experience. A new neonatal face mask based on the suction system reduced leak in a manikin model. Clinical studies to test the safety and effectiveness of this mask are needed. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

Effects of temporal integration on the shape of visual backward masking functions.

PubMed

Francis, Gregory; Cho, Yang Seok

2008-10-01

Many studies of cognition and perception use a visual mask to explore the dynamics of information processing of a target. Especially important in these applications is the time between the target and mask stimuli. A plot of some measure of target visibility against stimulus onset asynchrony is called a masking function, which can sometimes be monotonic increasing but other times is U-shaped. Theories of backward masking have long hypothesized that temporal integration of the target and mask influences properties of masking but have not connected the influence of integration with the shape of the masking function. With two experiments that vary the spatial properties of the target and mask, the authors provide evidence that temporal integration of the stimuli plays a critical role in determining the shape of the masking function. The resulting data both challenge current theories of backward masking and indicate what changes to the theories are needed to account for the new data. The authors further discuss the implication of the findings for uses of backward masking to explore other aspects of cognition.

Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers

NASA Astrophysics Data System (ADS)

Pang, Linyong; Takatsukasa, Yutetsu; Hara, Daisuke; Pomerantsev, Michael; Su, Bo; Fujimura, Aki

2017-07-01

Inverse Lithography Technology (ILT) is becoming the choice for Optical Proximity Correction (OPC) of advanced technology nodes in IC design and production. Multi-beam mask writers promise significant mask writing time reduction for complex ILT style masks. Before multi-beam mask writers become the main stream working tools in mask production, VSB writers will continue to be the tool of choice to write both curvilinear ILT and Manhattanized ILT masks. To enable VSB mask writers for complex ILT style masks, model-based mask process correction (MB-MPC) is required to do the following: 1). Make reasonable corrections for complex edges for those features that exhibit relatively large deviations from both curvilinear ILT and Manhattanized ILT designs. 2). Control and manage both Edge Placement Errors (EPE) and shot count. 3. Assist in easing the migration to future multi-beam mask writer and serve as an effective backup solution during the transition. In this paper, a solution meeting all those requirements, MB-MPC with GPU acceleration, will be presented. One model calibration per process allows accurate correction regardless of the target mask writer.

The Boreal Virtual Forest. [CD-ROM].

ERIC Educational Resources Information Center

Indiana Univ.-Purdue Univ., Indianapolis.

This CD-ROM is an educational CD-ROM aimed at classroom audiences in 5th grade and above. Using QuickTime Virtual Reality (QTVR), the Boreal Virtual Forest is designed so that students are able to see views from inside the central hardwood forest and look up or down or spin around 360 degrees. The program allows students to become familiar with…

Evaluation of Two CD-ROMs from a Series on Cell Biology

ERIC Educational Resources Information Center

Sander, Uwe; Kerlen, Gertraude; Steinke, Mattias; Huk, Thomas; Floto, Christian

2003-01-01

Two CD-ROMs from a series dealing with various major aspects of cell biology are evaluated in this paper using quantitative and qualitative approaches. The findings delimit similarities and differences of the two CD-ROMs and shed light on how the programs could be used in the learning process and how they should not be. The overall impression, as…

Long-term in vivo provision of antigen-specific T cell immunity by programming hematopoietic stem cells

NASA Astrophysics Data System (ADS)

Yang, Lili; Baltimore, David

2005-03-01

A method to genetically program mouse hematopoietic stem cells to develop into functional CD8 or CD4 T cells of defined specificity in vivo is described. For this purpose, a bicistronic retroviral vector was engineered that efficiently delivers genes for both and chains of T cell receptor (TCR) to hematopoietic stem cells. When modified cell populations were used to reconstruct the hematopoietic lineages of recipient mice, significant percentages of antigen-specific CD8 or CD4 T cells were observed. These cells expressed normal surface markers and responded to peptide antigen stimulation by proliferation and cytokine production. Moreover, they could mature into memory cells after peptide stimulation. Using TCRs specific for a model tumor antigen, we found that the recipient mice were able to partially resist a challenge with tumor cells carrying the antigen. By combining cells modified with CD8- and CD4-specific TCRs, and boosting with dendritic cells pulsed with cognate peptides, complete suppression of tumor could be achieved and even tumors that had become established would regress and be eliminated after dendritic cell/peptide immunization. This methodology of "instructive immunotherapy" could be developed for controlling the growth of human tumors and attacking established pathogens.

Robust resolution enhancement optimization methods to process variations based on vector imaging model

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong

2012-03-01

Optical proximity correction (OPC) and phase shifting mask (PSM) are the most widely used resolution enhancement techniques (RET) in the semiconductor industry. Recently, a set of OPC and PSM optimization algorithms have been developed to solve for the inverse lithography problem, which are only designed for the nominal imaging parameters without giving sufficient attention to the process variations due to the aberrations, defocus and dose variation. However, the effects of process variations existing in the practical optical lithography systems become more pronounced as the critical dimension (CD) continuously shrinks. On the other hand, the lithography systems with larger NA (NA>0.6) are now extensively used, rendering the scalar imaging models inadequate to describe the vector nature of the electromagnetic field in the current optical lithography systems. In order to tackle the above problems, this paper focuses on developing robust gradient-based OPC and PSM optimization algorithms to the process variations under a vector imaging model. To achieve this goal, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. The steepest descent algorithm is used to optimize the mask iteratively. In order to improve the efficiency of the proposed algorithms, a set of algorithm acceleration techniques (AAT) are exploited during the optimization procedure.

Summation versus suppression in metacontrast masking: On the potential pitfalls of using metacontrast masking to assess perceptual-motor dissociation.

PubMed

Cardoso-Leite, Pedro; Waszak, Florian

2014-07-01

A briefly flashed target stimulus can become "invisible" when immediately followed by a mask-a phenomenon known as backward masking, which constitutes a major tool in the cognitive sciences. One form of backward masking is termed metacontrast masking. It is generally assumed that in metacontrast masking, the mask suppresses activity on which the conscious perception of the target relies. This assumption biases conclusions when masking is used as a tool-for example, to study the independence between perceptual detection and motor reaction. This is because other models can account for reduced perceptual performance without requiring suppression mechanisms. In this study, we used signal detection theory to test the suppression model against an alternative view of metacontrast masking, referred to as the summation model. This model claims that target- and mask-related activations fuse and that the difficulty in detecting the target results from the difficulty to discriminate this fused response from the response produced by the mask alone. Our data support this alternative view. This study is not a thorough investigation of metacontrast masking. Instead, we wanted to point out that when a different model is used to account for the reduced perceptual performance in metacontrast masking, there is no need to postulate a dissociation between perceptual and motor responses to account for the data. Metacontrast masking, as implemented in the Fehrer-Raab situation, therefore is not a valid method to assess perceptual-motor dissociations.

Development of movable mask system to cope with high beam current

NASA Astrophysics Data System (ADS)

Suetsugu, Y.; Shibata, K.; Sanami, T.; Kageyama, T.; Takeuchi, Y.

2003-07-01

The KEK B factory (KEKB), a high current electron-positron collider, has a movable mask (or collimator) system to reduce the background noise in the BELLE detector coming from spent particles. The early movable masks, however, had severe problems of heating, arcing, and vacuum leaks over the stored beam current of several hundred mA. The cause is intense trapped higher order modes (HOMs) excited at the mask head, where the cross section of the beam chamber changed drastically. The mask head, made of copper-tungsten alloy or pure copper, was frequently damaged by hitting of the high energy beam at the same time. Since the problems of the mask were revealed, several kinds of improved masks have been designed employing rf technologies in dealing with the HOM and installed to the ring step by step. Much progress has come from adopting a trapped-mode free structure, where the mask was a bent chamber itself. Recently the further improved mask with a reduced HOM design or HOM dampers was developed to suppress the heating of vacuum components near the mask due to the HOM traveling from the mask. To avoid damage to the mask head, on the other hand, a titanium mask head was tried. The latest masks are working as expected now at the stored beam current of 1.5 A. Presented are the problems and experiences on the movable mask system for the KEKB, which are characteristic of and common in a high intensity accelerator.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

An operational application of satellite snow cover observations, northwest United States. [using LANDSAT 1

NASA Technical Reports Server (NTRS)

Dillard, J. P.

1975-01-01

LANDSAT-1 imagery showing extent of snow cover was collected and is examined for the 1973 and 1974 snowmelt seasons for three Columbia River Basins. Snowlines were mapped and the aerial snow cover was determined using satellite data. Satellite snow mapping products were compared products from conventional information sources (computer programming and aerial photography was used). Available satellite data were successfully analyzed by radiance thresholding to determine snowlines and the attendant snow-covered area. Basin outline masks, contour elevation masks, and grid overlays were utilized as satellite data interpretation aids. Verification of the LANDSAT-1 data was generally good although there were exceptions. A major problem was lack of adequate cloud-free satellite imagery of high resolution and determining snowlines in forested areas.

Assessment of a respiratory face mask for capturing air pollutants and pathogens including human influenza and rhinoviruses.

PubMed

Zhou, S Steve; Lukula, Salimatu; Chiossone, Cory; Nims, Raymond W; Suchmann, Donna B; Ijaz, M Khalid

2018-03-01

Prevention of infection with airborne pathogens and exposure to airborne particulates and aerosols (environmental pollutants and allergens) can be facilitated through use of disposable face masks. The effectiveness of such masks for excluding pathogens and pollutants is dependent on the intrinsic ability of the masks to resist penetration by airborne contaminants. This study evaluated the relative contributions of a mask, valve, and Micro Ventilator on aerosol filtration efficiency of a new N95 respiratory face mask. The test mask was challenged, using standardized methods, with influenza A and rhinovirus type 14, bacteriophage ΦΧ174, Staphylococcus aureus ( S . aureus ), and model pollutants. The statistical significance of results obtained for different challenge microbial agents and for different mask configurations (masks with operational or nonoperational ventilation fans and masks with sealed Smart Valves) was assessed. The results demonstrate >99.7% efficiency of each test mask configuration for exclusion of influenza A virus, rhinovirus 14, and S . aureus and >99.3% efficiency for paraffin oil and sodium chloride (surrogates for PM 2.5 ). Statistically significant differences in effectiveness of the different mask configurations were not identified. The efficiencies of the masks for excluding smaller-size (i.e., rhinovirus and bacteriophage ΦΧ174) vs. larger-size microbial agents (influenza virus, S . aureus ) were not significantly different. The masks, with or without features intended for enhancing comfort, provide protection against both small- and large-size pathogens. Importantly, the mask appears to be highly efficient for filtration of pathogens, including influenza and rhinoviruses, as well as the fine particulates (PM 2.5 ) present in aerosols that represent a greater challenge for many types of dental and surgical masks. This renders this individual-use N95 respiratory mask an improvement over the former types of masks for protection against a variety of environmental contaminants including PM 2.5 and pathogens such as influenza and rhinoviruses.

Assessment of a respiratory face mask for capturing air pollutants and pathogens including human influenza and rhinoviruses

PubMed Central

Zhou, S. Steve; Lukula, Salimatu; Chiossone, Cory; Nims, Raymond W.; Suchmann, Donna B.

2018-01-01

Background Prevention of infection with airborne pathogens and exposure to airborne particulates and aerosols (environmental pollutants and allergens) can be facilitated through use of disposable face masks. The effectiveness of such masks for excluding pathogens and pollutants is dependent on the intrinsic ability of the masks to resist penetration by airborne contaminants. This study evaluated the relative contributions of a mask, valve, and Micro Ventilator on aerosol filtration efficiency of a new N95 respiratory face mask. Methods The test mask was challenged, using standardized methods, with influenza A and rhinovirus type 14, bacteriophage ΦΧ174, Staphylococcus aureus (S. aureus), and model pollutants. The statistical significance of results obtained for different challenge microbial agents and for different mask configurations (masks with operational or nonoperational ventilation fans and masks with sealed Smart Valves) was assessed. Results The results demonstrate >99.7% efficiency of each test mask configuration for exclusion of influenza A virus, rhinovirus 14, and S. aureus and >99.3% efficiency for paraffin oil and sodium chloride (surrogates for PM2.5). Statistically significant differences in effectiveness of the different mask configurations were not identified. The efficiencies of the masks for excluding smaller-size (i.e., rhinovirus and bacteriophage ΦΧ174) vs. larger-size microbial agents (influenza virus, S. aureus) were not significantly different. Conclusions The masks, with or without features intended for enhancing comfort, provide protection against both small- and large-size pathogens. Importantly, the mask appears to be highly efficient for filtration of pathogens, including influenza and rhinoviruses, as well as the fine particulates (PM2.5) present in aerosols that represent a greater challenge for many types of dental and surgical masks. This renders this individual-use N95 respiratory mask an improvement over the former types of masks for protection against a variety of environmental contaminants including PM2.5 and pathogens such as influenza and rhinoviruses. PMID:29707364

Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Kim, Jinsu; Lowe, Jeff; Dattilo, Davide; Koh, Soowan; Choi, Jun Yeol; Dietze, Uwe; Shoki, Tsutomu; Kim, Byung Gook; Jeon, Chan-Uk

2015-10-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. SPM (Sulfuric acid peroxide mixture) which has been extensively used for acid cleaning of photomask and wafer has serious drawback for EUV mask cleaning. It shows severe film loss of tantalum-based absorber layers and limited removal efficiency of EUV-generated carbon contaminants on EUV mask surface. Here, we introduce such novel cleaning chemicals developed for EUV mask as almost film loss free for various layers of the mask and superior carbon removal performance. Combinatorial chemical screening methods allowed us to screen several hundred combinations of various chemistries and additives under several different process conditions of temperature and time, eventually leading to development of the best chemistry selections for EUV mask cleaning. Recently, there have been many activities for the development of EUV pellicle, driven by ASML and core EUV scanner customer companies. It is still important to obtain film-loss free cleaning chemicals because cleaning cycle of EUV mask should be much faster than that of optic mask mainly due to EUV pellicle lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality changes and film losses during 50 cleaning cycles using new chemicals as well as particle and carbon contaminant removal characteristics. We have observed that the performance of new chemicals developed is superior to current SPM or relevant cleaning chemicals for EUV mask cleaning and EUV mask lifetime elongation.

Distinct Mechanisms Regulate Exposure of Neutralizing Epitopes in the V2 and V3 Loops of HIV-1 Envelope

PubMed Central

Upadhyay, Chitra; Mayr, Luzia M.; Zhang, Jing; Kumar, Rajnish; Gorny, Miroslaw K.; Nádas, Arthur; Zolla-Pazner, Susan

2014-01-01

ABSTRACT Broadly neutralizing antibodies targeting the HIV-1 envelope (Env) are key components for protection against HIV-1. However, many cross-reactive epitopes are often occluded. This study investigates the mechanisms contributing to the masking of V2i (variable loop V2 integrin) epitopes compared to the accessibility of V3 epitopes. V2i are conformation-dependent epitopes encompassing the integrin α4β7-binding motif on the V1V2 loop of HIV-1 Env gp120. The V2i monoclonal antibodies (MAbs) display extensive cross-reactivity with gp120 monomers from many subtypes but neutralize only few viruses, indicating V2i's cryptic nature. First, we asked whether CD4-induced Env conformational changes affect V2i epitopes similarly to V3. CD4 treatment of BaL and JRFL pseudoviruses increased their neutralization sensitivity to V3 MAbs but not to the V2i MAbs. Second, the contribution of N-glycans in masking V2i versus V3 epitopes was evaluated by testing the neutralization of pseudoviruses produced in the presence of a glycosidase inhibitor, kifunensine. Viruses grown in kifunensine were more sensitive to neutralization by V3 but not V2i MAbs. Finally, we evaluated the time-dependent dynamics of the V2i and V3 epitopes. Extending the time of virus-MAb interaction to 18 h before adding target cells increased virus neutralization by some V2i MAbs and all V3 MAbs tested. Consistent with this, V2i MAb binding to Env on the surface of transfected cells also increased in a time-dependent manner. Hence, V2i and V3 epitopes are highly dynamic, but distinct factors modulate the antibody accessibility of these epitopes. The study reveals the importance of the structural dynamics of V2i and V3 epitopes in determining HIV-1 neutralization by antibodies targeting these sites. IMPORTANCE Conserved neutralizing epitopes are present in the V1V2 and V3 regions of HIV-1 Env, but these epitopes are often occluded from Abs. This study reveals that distinct mechanisms contribute to the masking of V3 epitopes and V2i epitopes in the V1V2 domain. Importantly, V3 MAbs and some V2i MAbs display greater neutralization against relatively resistant HIV-1 isolates when the MAbs interact with the virus for a prolonged period of time. Given their highly immunogenic nature, V3 and V2i epitopes are valuable targets that would augment the efficacy of HIV vaccines. PMID:25165106

Overlay improvement by exposure map based mask registration optimization

NASA Astrophysics Data System (ADS)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density could also achieve under 5nm performance. We assume mask registration excluding random error is mostly induced by charge accumulation during mask writing, which may be calculated from surrounding exposed pattern density. Multi-loading test mask registration result shows that with x direction writing sequence, mask registration behavior in x direction is mainly related to sequence direction, but mask registration in y direction would be highly impacted by pattern density distribution map. It proves part of mask registration error is due to charge issue from nearby environment. If exposure sequence is chip by chip for normal multi chip layout case, mask registration of both x and y direction would be impacted analogously, which has also been proved by real data. Therefore, we try to set up a simple model to predict the mask registration error based on mask exposure map, and correct it with the given POSCOR (position correction) file for advanced mask writing if needed.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, Wing C.

1994-01-01

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, W.C.

1994-02-15

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible. 63 figures.

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Bottiglieri, Gerardo; de Winter, Laurens; McNamara, John; Rusu, Paul; Lubkoll, Jan; Rispens, Gijsbert; van Schoot, Jan; Neumann, Jens Timo; Roesch, Matthias; Kneer, Bernhard

2017-10-01

To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore's law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

Stress among healthcare students--a cross disciplinary perspective.

PubMed

Jacob, Tamar; Itzchak, Esther Ben; Raz, Olga

2013-07-01

Perceived stress (PS) among healthcare students worldwide is a recognized problem. To address the paucity of data about the actual degree of PS, this study aimed to: 1) evaluate and compare PS across three healthcare programs (Physical Therapy [PT], Communication Disorders [CD], and Nutrition Sciences [NS]) in one university; 2) evaluate changes in PS across study years; 3) identify the contribution of academic- and socio-demographic-related variables to PS; and 4) determine whether the Israeli students' PS levels differ from those of their peers in other countries. A cross-sectional survey was performed among all undergraduate PT, CD, and NS students from one university. Data were collected using anonymous questionnaires. Instruments included the Perceived Stress Scale 10 (PSS) and the Undergraduate Sources of Stress (USOS). ANOVA was used to evaluate the differences between the three programs, and regression analysis to evaluate the contribution of socio-demographic factors to PS and USOS. A total of 312 students (PT--154; CD--92; NS--66) participated in the study. Mean PSS (range: 13.5-13.6) was similar in the three programs. The USOS academic factor was the most reported source of stress in all programs. Most socio-demographic variables were not related to either PS or USOS. Students from PT, CD, and NS programs perceived similar levels of stress. The academic factor was perceived as the most important source of stress by students from the three departments, despite differences in the academic educational programs. Further studies are needed to generalize these results and enable a comparison between healthcare students and other students' stress perceptions.

Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Osaka, Naoyuki

2009-01-01

A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

Gestalt grouping and common onset masking.

PubMed

Kahan, Todd A; Mathis, Katherine M

2002-11-01

A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

Aerobic physical training does not condition against strenuous exercise-induced changes in immune function but modulates T cell proliferative responses.

PubMed

Patiño, Pablo J; Caraballo, Domingo I; Szewczyk, Katarzyna; Quintana, Juan C; Bedoya, Lady R; Ramírez, Beatriz E; Jaramillo, Andrés

2017-09-29

Exercise-induced stress induces considerable changes in the immune system. To better understand the mechanisms related to these immune changes during acute and chronic physical stress, we studied the effects of aerobic physical training (APT) on several parameters of the immune system. Previously untrained males (18-25 years of age) were divided into a group that was subjected to 6 months of APT (n=10) and a sedentary control group (n=7). The subjects performed a cardiopulmonary exercise test (CET) at 0, 3, and 6 months of the APT program. B cell (CD19+), T cell (CD4+ and CD8+), and natural killer cell (CD56+) levels, and mitogen-induced T cell proliferation and cytokine production (interleukin-1, interleukin-4, interleukin-12, and interferon-) were evaluated before and at 30 seconds and 24 hours after the CET. There was a significant increase in CD4+ T cells and natural killer cells and a significant reduction in T cell proliferation in both groups 30 seconds after the CET at 3 and 6 months of the APT program. Of note, the trained group showed significantly lower resting T cell proliferation (before and 24 hour after the CET) than the sedentary control group at 3 and 6 months of the APT program. There were no significant differences in cytokine production after the CET between both groups at any time point of the APT program. These data show that APT does not condition against strenuous exercise induced immune changes but significantly modulates T cell proliferative responses.

A computational investigation of feedforward and feedback processing in metacontrast backward masking

PubMed Central

Silverstein, David N.

2015-01-01

In human perception studies, visual backward masking has been used to understand the temporal dynamics of subliminal vs. conscious perception. When a brief target stimulus is followed by a masking stimulus after a short interval of <100 ms, performance on the target is impaired when the target and mask are in close spatial proximity. While the psychophysical properties of backward masking have been studied extensively, there is still debate on the underlying cortical dynamics. One prevailing theory suggests that the impairment of target performance due to the mask is the result of lateral inhibition between the target and mask in feedforward processing. Another prevailing theory suggests that this impairment is due to the interruption of feedback processing of the target by the mask. This computational study demonstrates that both aspects of these theories may be correct. Using a biophysical model of V1 and V2, visual processing was modeled as interacting neocortical attractors, which must propagate up the visual stream. If an activating target attractor in V1 is quiesced enough with lateral inhibition from a mask, or not reinforced by recurrent feedback, it is more likely to burn out before becoming fully active and progressing through V2 and beyond. Results are presented which simulate metacontrast backward masking with an increasing stimulus interval and with the presence and absence of feedback activity. This showed that recurrent feedback diminishes backward masking effects and can make conscious perception more likely. One model configuration presented a metacontrast noise mask in the same hypercolumns as the target, and produced type-A masking. A second model configuration presented a target line with two parallel adjacent masking lines, and produced type-B masking. Future work should examine how the model extends to more complex spatial mask configurations. PMID:25759672

Neonatal mannequin comparison of the Upright self-inflating bag and snap-fit mask versus standard resuscitators and masks: leak, applied load and tidal volumes.

PubMed

Rafferty, Anthony Richard; Johnson, Lucy; Davis, Peter G; Dawson, Jennifer Anne; Thio, Marta; Owen, Louise S

2017-11-30

Neonatal mask ventilation is a difficult skill to acquire and maintain. Mask leak is common and can lead to ineffective ventilation. The aim of this study was to determine whether newly available neonatal self-inflating bags and masks could reduce mask leak without additional load being applied to the face. Forty operators delivered 1 min episodes of mask ventilation to a mannequin using the Laerdal Upright Resuscitator, a standard Laerdal infant resuscitator (Laerdal Medical) and a T-Piece Resuscitator (Neopuff), using both the Laerdal snap-fit face mask and the standard Laerdal size 0/1 face mask (equivalent sizes). Participants were asked to use pressure sufficient to achieve 'appropriate' chest rise. Leak, applied load, airway pressure and tidal volume were measured continuously. Participants were unaware that load was being recorded. There was no difference in mask leak between resuscitation devices. Leak was significantly lower when the snap-fit mask was used with all resuscitation devices, compared with the standard mask (14% vs 37% leak, P<0.01). The snap-fit mask was preferred by 83% of participants. The device-mask combinations had no significant effect on applied load. The Laerdal Upright Resuscitator resulted in similar leak to the other resuscitation devices studied, and did not exert additional load to the face and head. The snap-fit mask significantly reduced overall leak with all resuscitation devices and was the mask preferred by participants. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

What's behind the mask? A look at blood flow changes with prolonged facial pressure and expression using laser Doppler imaging.

PubMed

Van-Buendia, Lan B; Allely, Rebekah R; Lassiter, Ronald; Weinand, Christian; Jordan, Marion H; Jeng, James C

2010-01-01

Clinically, the initial blanching in burn scar seen on transparent plastic face mask application seems to diminish with time and movement requiring mask alteration. To date, studies quantifying perfusion with prolonged mask use do not exist. This study used laser Doppler imaging (LDI) to assess perfusion through the transparent face mask and movement in subjects with and without burn over time. Five subjects fitted with transparent face masks were scanned with the LDI on four occasions. The four subjects without burn were scanned in the following manner: 1) no mask, 2) mask on while at rest, 3) mask on with alternating intervals of sustained facial expression and rest, and 4) after mask removal. Images were acquired every 3 minutes throughout the 85-minute study period. The subject with burn underwent a shortened scanning protocol to increase comfort. Each face was divided into five regions of interest for analysis. Compared with baseline, mask application decreased perfusion significantly in all subjects (P < .0001). Perfusion did not change during the rest period. There were no significant differences with changing facial expression in any of the regions of interest. On mask removal, all regions of the face demonstrated a hyperemic effect with the chin (P = .05) and each cheek (P < .0001) reaching statistical significance. Perfusion levels did not return to baseline in the chin and cheeks after 30 minutes of mask removal. Perfusions remain constantly low while wearing the face mask, despite changing facial expressions. Changing facial expressions with the mask on did not alter perfusion. Hyperemic response occurs on removal of the mask. This study exposed methodology and statistical issues worth considering when conducting future research with the face, pressure therapy, and with LDI technology.

Nasal mask ventilation is better than face mask ventilation in edentulous patients

PubMed Central

Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

2016-01-01

Background and Aims: Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Material and Methods: Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. Results: A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Conclusion: Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients. PMID:27625477

Brentuximab vedotin for relapsed or refractory CD30+ hematologic malignancies: the German Hodgkin Study Group experience.

PubMed

Rothe, Achim; Sasse, Stephanie; Goergen, Helen; Eichenauer, Dennis A; Lohri, Andreas; Jäger, Ulrich; Bangard, Christopher; Böll, Boris; von Bergwelt Baildon, Michael; Theurich, Sebastian; Borchmann, Peter; Engert, Andreas

2012-08-16

The CD30-targeting Ab-drug conjugate brentuximab vedotin (SGN-35) was recently approved for the treatment of relapsed Hodgkin lymphoma and anaplastic large-cell lymphoma by the Food and Drug Administration. In the present study, we report the experience of the German Hodgkin Study Group with brentuximab vedotin as single agent in 45 patients with refractory or relapsed CD30(+) Hodgkin lymphoma who were treated either in a named patient program (n = 34) or in the context of a safety study associated with the registration program of this drug. In these very heavily pretreated patients, an objective response rate of 60%, including 22% complete remissions, could be documented. The median duration of response was 8 months. This retrospective analysis supports the previously reported excellent therapeutic efficacy of brentuximab vedotin in heavily pretreated CD30(+) malignancies.

The effect of foveal and parafoveal masks on the eye movements of older and younger readers.

PubMed

Rayner, Keith; Yang, Jinmian; Schuett, Susanne; Slattery, Timothy J

2014-06-01

In the present study, we examined foveal and parafoveal processing in older compared with younger readers by using gaze-contingent paradigms with 4 conditions. Older and younger readers read sentences in which the text was either a) presented normally, b) the foveal word was masked as soon as it was fixated, c) all of the words to the left of the fixated word were masked, or d) all of the words to the right of the fixated word were masked. Although older and younger readers both found reading when the fixated word was masked quite difficult, the foveal mask increased sentence reading time more than 3-fold (3.4) for the older readers (in comparison with the control condition in which the sentence was presented normally) compared with the younger readers who took 1.3 times longer to read sentences in the foveal mask condition (in comparison with the control condition). The left and right parafoveal masks did not disrupt reading as severely as the foveal mask, though the right mask was more disruptive than the left mask. Also, there was some indication that the younger readers found the right mask condition relatively more disruptive than the left mask condition. PsycINFO Database Record (c) 2014 APA, all rights reserved.

42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

Code of Federal Regulations, 2011 CFR

2011-10-01

... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and... reduce the respiratory protective qualities of the gas mask. (c) Half-mask facepieces shall not interfere...

42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

Code of Federal Regulations, 2012 CFR

2012-10-01

... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and... reduce the respiratory protective qualities of the gas mask. (c) Half-mask facepieces shall not interfere...

42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

Code of Federal Regulations, 2010 CFR

2010-10-01

... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and... reduce the respiratory protective qualities of the gas mask. (c) Half-mask facepieces shall not interfere...

42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

Code of Federal Regulations, 2013 CFR

2013-10-01

... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and... reduce the respiratory protective qualities of the gas mask. (c) Half-mask facepieces shall not interfere...

42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

Code of Federal Regulations, 2014 CFR

2014-10-01

... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and... reduce the respiratory protective qualities of the gas mask. (c) Half-mask facepieces shall not interfere...

Individual differences in metacontrast masking regarding sensitivity and response bias.

PubMed

Albrecht, Thorsten; Mattler, Uwe

2012-09-01

In metacontrast masking target visibility is modulated by the time until a masking stimulus appears. The effect of this temporal delay differs across participants in such a way that individual human observers' performance shows distinguishable types of masking functions which remain largely unchanged for months. Here we examined whether individual differences in masking functions depend on different response criteria in addition to differences in discrimination sensitivity. To this end we reanalyzed previously published data and conducted a new experiment for further data analyses. Our analyses demonstrate that a distinction of masking functions based on the type of masking stimulus is superior to a distinction based on the target-mask congruency. Individually different masking functions are based on individual differences in discrimination sensitivities and in response criteria. Results suggest that individual differences in metacontrast masking result from individually different criterion contents. Copyright © 2012 Elsevier Inc. All rights reserved.

Face mask use and control of respiratory virus transmission in households.

PubMed

MacIntyre, C Raina; Cauchemez, Simon; Dwyer, Dominic E; Seale, Holly; Cheung, Pamela; Browne, Gary; Fasher, Michael; Wood, James; Gao, Zhanhai; Booy, Robert; Ferguson, Neil

2009-02-01

Many countries are stockpiling face masks for use as a nonpharmaceutical intervention to control virus transmission during an influenza pandemic. We conducted a prospective cluster-randomized trial comparing surgical masks, non-fit-tested P2 masks, and no masks in prevention of influenza-like illness (ILI) in households. Mask use adherence was self-reported. During the 2006 and 2007 winter seasons, 286 exposed adults from 143 households who had been exposed to a child with clinical respiratory illness were recruited. We found that adherence to mask use significantly reduced the risk for ILI-associated infection, but <50% of participants wore masks most of the time. We concluded that household use of face masks is associated with low adherence and is ineffective for controlling seasonal respiratory disease. However, during a severe pandemic when use of face masks might be greater, pandemic transmission in households could be reduced.

Masking of Figure-Ground Texture and Single Targets by Surround Inhibition: A Computational Spiking Model

PubMed Central

Supèr, Hans; Romeo, August

2012-01-01

A visual stimulus can be made invisible, i.e. masked, by the presentation of a second stimulus. In the sensory cortex, neural responses to a masked stimulus are suppressed, yet how this suppression comes about is still debated. Inhibitory models explain masking by asserting that the mask exerts an inhibitory influence on the responses of a neuron evoked by the target. However, other models argue that the masking interferes with recurrent or reentrant processing. Using computer modeling, we show that surround inhibition evoked by ON and OFF responses to the mask suppresses the responses to a briefly presented stimulus in forward and backward masking paradigms. Our model results resemble several previously described psychophysical and neurophysiological findings in perceptual masking experiments and are in line with earlier theoretical descriptions of masking. We suggest that precise spatiotemporal influence of surround inhibition is relevant for visual detection. PMID:22393370

EUVL mask dual pods to be used for mask shipping and handling in exposure tools

NASA Astrophysics Data System (ADS)

Gomei, Yoshio; Ota, Kazuya; Lystad, John; Halbmair, Dave; He, Long

2007-03-01

The concept of Extreme Ultra-Violet Lithography (EUVL) mask dual pods is proposed for use in both mask shipping and handling in exposure tools. The inner pod was specially designed to protect masks from particle contamination during shipping from mask houses to wafer factories. It can be installed in a load-lock chamber of exposure tools and evacuated while holding the mask inside. The inner pod upper cover is removed just before the mask is installed to a mask stage. Prototypes were manufactured and tested for shipping and for vacuum cycling. We counted particle adders through these actions with a detectable level of 54 nm and up. The adder count was close to zero, or we can say that the obtained result is within the noise level of our present evaluation environment. This indicates that the present concept is highly feasible for EUVL mask shipping and handling in exposure tools.

Rotating Modulation Imager for the Orphan Source Search Problem

DTIC Science & Technology

2008-01-01

black mask. If the photon hits an open element it is transmitted and the function M(x) = 1. If the photon hits a closed mask element it is not...photon enters the top mask pair in the third slit, but passes through the second slit on the bottom mask. With a single black mask this is physically...modulation efficiency changes as a function of mask thickness for both tungsten and lead masks. The black line shows how the field of view changes with

Oral dendritic cells mediate antigen-specific tolerance by stimulating TH1 and regulatory CD4+ T cells.

PubMed

Mascarell, Laurent; Lombardi, Vincent; Louise, Anne; Saint-Lu, Nathalie; Chabre, Henri; Moussu, Hélène; Betbeder, Didier; Balazuc, Anne-Marie; Van Overtvelt, Laurence; Moingeon, Philippe

2008-09-01

A detailed characterization of oral antigen-presenting cells is critical to improve second-generation sublingual allergy vaccines. To characterize oral dendritic cells (DCs) within lingual and buccal tissues from BALB/c mice with respect to their surface phenotype, distribution, and capacity to polarize CD4(+) T-cell responses. In situ analysis of oral DCs was performed by immunohistology. Purified DCs were tested in vitro for their capacity to capture, process, and present the ovalbumin antigen to naive CD4(+) T cells. In vivo priming of ovalbumin-specific T cells adoptively transferred to BALB/c mice was analyzed by cytofluorometry in cervical lymph nodes after sublingual administration of mucoadhesive ovalbumin. Three subsets of oral DCs with a distinct tissue distribution were identified: (1) a minor subset of CD207(+) Langerhans cells located in the mucosa itself, (2) a major subpopulation of CD11b(+)CD11c(-) and CD11b(+)CD11c(+) myeloid DCs at the mucosal/submucosal interface, and (3) B220(+)120G8(+) plasmacytoid DCs found in submucosal tissues. Purified myeloid and plasmacytoid oral DCs capture and process the antigen efficiently and are programmed to elicit IFN-gamma and/or IL-10 production together with a suppressive function in naive CD4(+) T cells. Targeting the ovalbumin antigen to oral DCs in vivo by using mucoadhesive particles establishes tolerance in the absence of cell depletion through the stimulation of IFN-gamma and IL-10-producing CD4(+) regulatory T cells in cervical lymph nodes. The oral immune system is composed of various subsets of tolerogenic DCs organized in a compartmentalized manner and programmed to induce T(H)1/regulatory T-cell responses.

Response to programmed cell death-1 blockade in a murine melanoma syngeneic model requires costimulation, CD4, and CD8 T cells

PubMed Central

Moreno, Blanca Homet; Zaretsky, Jesse M.; Garcia-Diaz, Angel; Tsoi, Jennifer; Parisi, Giulia; Robert, Lidia; Meeth, Katrina; Ndoye, Abibatou; Bosenberg, Marcus; Weeraratna, Ashani T.; Graeber, Thomas G.; Comin-Anduix, Begoña; Hu-Lieskovan, Siwen; Ribas, Antoni

2016-01-01

The programmed cell death protein 1 (PD-1) limits effector T-cell functions in peripheral tissues and its inhibition leads to clinical benefit in different cancers. To better understand how PD-1 blockade therapy modulates the tumor-host interactions, we evaluated three syngeneic murine tumor models, the BRAFV600E-driven YUMM1.1 and YUMM2.1 melanomas, and the carcinogen-induced murine colon adenocarcinoma MC38. The YUMM cell lines were established from mice with melanocyte-specific BRAFV600E mutation and PTEN loss (BRAFV600E/PTEN-/-). Anti–PD-1 or anti–PD-L1 therapy engendered strong antitumor activity against MC38 and YUMM2.1, but not YUMM1.1. PD-L1 expression did not differ between the three models at baseline or upon interferon stimulation. Whereas mutational load was high in MC38, it was lower in both YUMM models. In YUMM2.1, the antitumor activity of PD-1 blockade had a critical requirement for both CD4 and CD8 T cells, as well as CD28 and CD80/86 costimulation, with an increase in CD11c+CD11b+MHC-IIhigh dendritic cells and tumor associated macrophages in the tumors after PD-1 blockade. Compared to YUMM1.1, YUMM2.1 exhibited a more inflammatory profile by RNA sequencing analysis, with an increase in expression from chemokine-trafficking genes that are related to immune cell recruitment and T-cell priming. In conclusion, response to PD-1 blockade therapy in tumor models requires CD4 and CD8 T cells and costimulation that is mediated by dendritic cells and macrophages. PMID:27589875

Modulation of Endoplasmic Reticulum Stress Controls CD4+ T-cell Activation and Antitumor Function.

PubMed

Thaxton, Jessica E; Wallace, Caroline; Riesenberg, Brian; Zhang, Yongliang; Paulos, Chrystal M; Beeson, Craig C; Liu, Bei; Li, Zihai

2017-08-01

The endoplasmic reticulum (ER) is an energy-sensing organelle with intimate ties to programming cell activation and metabolic fate. T-cell receptor (TCR) activation represents a form of acute cell stress and induces mobilization of ER Ca 2+ stores. The role of the ER in programming T-cell activation and metabolic fate remains largely undefined. Gp96 is an ER protein with functions as a molecular chaperone and Ca 2+ buffering protein. We hypothesized that the ER stress response may be important for CD4 + T-cell activation and that gp96 may be integral to this process. To test our hypothesis, we utilized genetic deletion of the gp96 gene Hsp90b1 in a CD4 + T cell-specific manner. We show that gp96-deficient CD4 + T cells cannot undergo activation-induced glycolysis due to defective Ca 2+ mobilization upon TCR engagement. We found that activating naïve CD4 + T cells while inhibiting ER Ca 2+ exchange, through pharmacological blockade of the ER Ca 2+ channel inositol trisphosphate receptor (IP 3 R), led to a reduction in cytosolic Ca 2+ content and generated a pool of CD62L high /CD44 low CD4 + T cells compared with wild-type (WT) matched controls. In vivo IP 3 R-inhibited CD4 + T cells exhibited elevated tumor control above WT T cells. Together, these data show that ER-modulated cytosolic Ca 2+ plays a role in defining CD4 + T-cell phenotype and function. Factors associated with the ER stress response are suitable targets for T cell-based immunotherapies. Cancer Immunol Res; 5(8); 666-75. ©2017 AACR . ©2017 American Association for Cancer Research.

Programmed Death 1 Regulates Memory Phenotype CD4 T Cell Accumulation, Inhibits Expansion of the Effector Memory Phenotype Subset and Modulates Production of Effector Cytokines

PubMed Central

Charlton, Joanna J.; Tsoukatou, Debbie; Mamalaki, Clio; Chatzidakis, Ioannis

2015-01-01

Memory phenotype CD4 T cells are found in normal mice and arise through response to environmental antigens or homeostatic mechanisms. The factors that regulate the homeostasis of memory phenotype CD4 cells are not clear. In the present study we demonstrate that there is a marked accumulation of memory phenotype CD4 cells, specifically of the effector memory (TEM) phenotype, in lymphoid organs and tissues of mice deficient for the negative co-stimulatory receptor programmed death 1 (PD-1). This can be correlated with decreased apoptosis but not with enhanced homeostatic turnover potential of these cells. PD-1 ablation increased the frequency of memory phenotype CD4 IFN-γ producers but decreased the respective frequency of IL-17A-producing cells. In particular, IFN-γ producers were more abundant but IL-17A producing cells were more scarce among PD-1 KO TEM-phenotype cells relative to WT. Transfer of peripheral naïve CD4 T cells suggested that accumulated PD-1 KO TEM-phenotype cells are of peripheral and not of thymic origin. This accumulation effect was mediated by CD4 cell-intrinsic mechanisms as shown by mixed bone marrow chimera experiments. Naïve PD-1 KO CD4 T cells gave rise to higher numbers of TEM-phenotype lymphopenia-induced proliferation memory cells. In conclusion, we provide evidence that PD-1 has an important role in determining the composition and functional aspects of memory phenotype CD4 T cell pool. PMID:25803808

A study of an alignment-less lithography method as an educational resource

NASA Astrophysics Data System (ADS)

Kai, Kazuho; Shiota, Koki; Nagaoka, Shiro; Mahmood, Mohamad Rusop Bin Haji; Kawai, Akira

2016-07-01

A simplification of the lithography process was studied. The simplification method of photolithography, named "alignment-less lithography" was proposed by omitting the photomask alignment process in photolithography process using mechanically aligned photomasks and substrate by using a simple jig on which countersinks were formed. Photomasks made of glass and the photomasks made of transparent plastic sheets were prepared for the process. As the result, approximately 5µm in the case of the glass mask, and 20µm in the case of the OHP mask were obtained with repetitive accuracies, respectively. It was confirmed that the alignment-less lithography method was successful. The possibility of the application to an educational program, such as a heuristic for solving problems was suggested using the method with the OHP mask. The nMOS FET fabrication process was successfully demonstrated using this method. The feasibility of this process was confirmed. It is expected that a totally simplified device fabrication process can be achievable when combined with other simplifications, such ass the simplified impurity diffusion processes using PSG and BSG thin film as diffusion source prepared by the Sol-Gel material under normal air environment.

Assessing the extent and impact of the masking effect of disproportionality analyses on two spontaneous reporting systems databases.

PubMed

Maignen, Francois; Hauben, Manfred; Hung, Eric; Van Holle, Lionel; Dogne, Jean-Michel

2014-02-01

Masking is a statistical issue by which signals are hidden by the presence of other medicines in the database. In the absence algorithm, the impact of the masking effect has not been fully investigated. Our study is aimed at assessing the extent and the impact of the masking effect on two large spontaneous reporting databases. Cross sectional study using a set of terms of importance for public health in two spontaneous reporting databases. The analyses were performed on EudraVigilance (EV) and the Pfizer spontaneous reporting database (PfDB). Using the masking ratio, we have identified and removed the products inducing the highest masking effect. Studying a total of almost 50 000 drug-event combinations masking had an impact on approximately 60% of drug-event combinations were masked by another product with a masking ratio >1 in EV and 84% in PfDB. The prevalence of important masking was quite rare (0.003% of the DECs) and mainly affected events rarely reported in EV. The products involved in the highest masking effects are products known to induce the reaction. The removal of the masking effect of the highest masking product has revealed 974 signals of disproportionate reporting in EV including true signals. The study shows that the original ranking provided by the quantitative methods included in our study is marginally affected by the removal of the masking product. Our study suggests that significant masking is rare in large spontaneous databases and mostly affects events rarely reported in EV. Copyright © 2013 John Wiley & Sons, Ltd.

Analysis of the ability of catcher's masks to attenuate head accelerations on impact with a baseball.

PubMed

Shain, Kellen S; Madigan, Michael L; Rowson, Steven; Bisplinghoff, Jill; Duma, Stefan M

2010-11-01

The goals of this study were to measure the ability of catcher's masks to attenuate head accelerations on impact with a baseball and to compare these head accelerations to established injury thresholds for mild traumatic brain injury. Testing involved using a pneumatic cannon to shoot baseballs at an instrumented Hybrid III headform (a 50th percentile male head and neck) with and without a catcher's mask on the head. The ball speed was controlled from approximately 26.8 to 35.8 m/s (60-80 mph), and the regulation National Collegiate Athletic Association baseballs were used. Research laboratory. None. Catcher's masks and impact velocity. The linear and angular head accelerations of the Hybrid III headform. Peak linear resultant acceleration was 140 to 180 g without a mask and 16 to 30 g with a mask over the range of ball's speed investigated. Peak angular resultant acceleration was 19 500 to 25 700 rad/s without a mask and 2250 to 3230 rad/s with a mask. The Head Injury Criterion was 93 to 181 without a mask and 3 to 13 with a mask, and the Severity Index was 110 to 210 without a mask and 3 to 15 with a mask. Catcher's masks reduced head acceleration metrics by approximately 85%. Head acceleration metrics with a catcher's mask were significantly lower than contemporary injury thresholds, yet reports in the mass media clearly indicate that baseball impacts to the mask still occasionally result in mild traumatic brain injuries. Further research is needed to address this apparent contradiction.

Asymmetry in Object Substitution Masking Occurs Relative to the Direction of Spatial Attention Shift

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Osaka, Naoyuki

2010-01-01

A sparse mask that persists beyond the duration of a target can reduce its visibility, a phenomenon called "object substitution masking". Y. Jiang and M. M. Chun (2001a) found an asymmetric pattern of substitution masking such that a mask on the peripheral side of the target caused stronger substitution masking than on the central side.…

"The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

ERIC Educational Resources Information Center

Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

2015-01-01

Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

Mask etcher data strategy for 45nm and beyond

NASA Astrophysics Data System (ADS)

Lewington, Richard; Ibrahim, Ibrahim M.; Panayil, Sheeba; Kumar, Ajay; Yamartino, John

2006-05-01

Mask Etching for the 45nm technology node and beyond requires a system-level data and diagnostics strategy. This necessity stems from the need to control the performance of the mask etcher to increasingly stringent and diverse requirements of the mask production environment. Increasing mask costs and the capability to acquire and consolidate a wealth of data within the mask etch platform are primary motivators towards harnessing data mines for feedback into the mask etching optimization. There are offline and real-time possibilities and scenarios. Here, we discuss the data architecture, acquisition, and strategies of the Applied Materials Tetra II TM Mask Etch System.

The efficacy of three different mask styles on a PAP titration night.

PubMed

Ebben, Matthew R; Oyegbile, Temitayo; Pollak, Charles P

2012-06-01

This study compared the efficacy of three different masks, nasal pillows, nasal masks and full face (oronasal) masks, during a single night of titration with continuous positive airway pressure (CPAP). Fifty five subjects that included men (n=33) and women (n=22) were randomly assigned to one of three masks and underwent a routine titration with incremental CPAP applied through the different masks. CPAP applied through the nasal pillows and nasal mask was equally effective in treating mild, moderate, and severe sleep apnea. However, CPAP applied through the oronasal mask required a significantly higher pressure compared to nasal masks to treat moderately severe (2.8 cm of H(2)O ± 2.1 SD) and severe (6.0 cm of H(2)O ± 3.2 SD) obstructive sleep apnea. CPAP applied with either nasal mask was effective in treating mild, moderate, and severe sleep apnea. The oronasal mask required significantly higher pressures in subjects with moderate to severe disease. Therefore, when changing from a nasal to an oronasal mask, a repeat titration is required to ensure effective treatment of sleep apnea, especially in patients with moderate to severe disease. Copyright © 2012 Elsevier B.V. All rights reserved.

Professional and Home-Made Face Masks Reduce Exposure to Respiratory Infections among the General Population

PubMed Central

van der Sande, Marianne; Teunis, Peter; Sabel, Rob

2008-01-01

Background Governments are preparing for a potential influenza pandemic. Therefore they need data to assess the possible impact of interventions. Face-masks worn by the general population could be an accessible and affordable intervention, if effective when worn under routine circumstances. Methodology We assessed transmission reduction potential provided by personal respirators, surgical masks and home-made masks when worn during a variety of activities by healthy volunteers and a simulated patient. Principal Findings All types of masks reduced aerosol exposure, relatively stable over time, unaffected by duration of wear or type of activity, but with a high degree of individual variation. Personal respirators were more efficient than surgical masks, which were more efficient than home-made masks. Regardless of mask type, children were less well protected. Outward protection (mask wearing by a mechanical head) was less effective than inward protection (mask wearing by healthy volunteers). Conclusions/Significance Any type of general mask use is likely to decrease viral exposure and infection risk on a population level, in spite of imperfect fit and imperfect adherence, personal respirators providing most protection. Masks worn by patients may not offer as great a degree of protection against aerosol transmission. PMID:18612429

Professional and home-made face masks reduce exposure to respiratory infections among the general population.

PubMed

van der Sande, Marianne; Teunis, Peter; Sabel, Rob

2008-07-09

Governments are preparing for a potential influenza pandemic. Therefore they need data to assess the possible impact of interventions. Face-masks worn by the general population could be an accessible and affordable intervention, if effective when worn under routine circumstances. We assessed transmission reduction potential provided by personal respirators, surgical masks and home-made masks when worn during a variety of activities by healthy volunteers and a simulated patient. All types of masks reduced aerosol exposure, relatively stable over time, unaffected by duration of wear or type of activity, but with a high degree of individual variation. Personal respirators were more efficient than surgical masks, which were more efficient than home-made masks. Regardless of mask type, children were less well protected. Outward protection (mask wearing by a mechanical head) was less effective than inward protection (mask wearing by healthy volunteers). Any type of general mask use is likely to decrease viral exposure and infection risk on a population level, in spite of imperfect fit and imperfect adherence, personal respirators providing most protection. Masks worn by patients may not offer as great a degree of protection against aerosol transmission.

RasGRP1 regulates antigen-induced developmental programming by naive CD8 T cells.

PubMed

Priatel, John J; Chen, Xiaoxi; Huang, Yu-Hsuan; Chow, Michael T; Zenewicz, Lauren A; Coughlin, Jason J; Shen, Hao; Stone, James C; Tan, Rusung; Teh, Hung Sia

2010-01-15

Ag encounter by naive CD8 T cells initiates a developmental program consisting of cellular proliferation, changes in gene expression, and the formation of effector and memory T cells. The strength and duration of TCR signaling are known to be important parameters regulating the differentiation of naive CD8 T cells, although the molecular signals arbitrating these processes remain poorly defined. The Ras-guanyl nucleotide exchange factor RasGRP1 has been shown to transduce TCR-mediated signals critically required for the maturation of developing thymocytes. To elucidate the role of RasGRP1 in CD8 T cell differentiation, in vitro and in vivo experiments were performed with 2C TCR transgenic CD8 T cells lacking RasGRP1. In this study, we report that RasGRP1 regulates the threshold of T cell activation and Ag-induced expansion, at least in part, through the regulation of IL-2 production. Moreover, RasGRP1(-/-) 2C CD8 T cells exhibit an anergic phenotype in response to cognate Ag stimulation that is partially reversible upon the addition of exogenous IL-2. By contrast, the capacity of IL-2/IL-2R interactions to mediate Ras activation and CD8 T cell expansion and differentiation appears to be largely RasGRP1-independent. Collectively, our results demonstrate that RasGRP1 plays a selective role in T cell signaling, controlling the initiation and duration of CD8 T cell immune responses.

Programmed death ligand 1 expression and CD8+ tumor-infiltrating lymphocyte density differences between paired primary and brain metastatic lesions in non-small cell lung cancer.

PubMed

Zhou, Jie; Gong, Zhihua; Jia, Qingzhu; Wu, Yan; Yang, Zhen-Zhou; Zhu, Bo

2018-04-15

Immunotherapy targeting the programmed cell death-1/programmed death ligand 1(PD-L1) pathway has shown promising antitumor activity in brain metastases (BMs) of non-small cell lung cancer (NSCLC) patients with an acceptable safety profile; however, the response rates often differ between primary lesions and intracranial lesions. Studies are necessary to identify detailed characterizations of the response biomarkers. In this study, we aimed to compare the differences of PD-L1 expression and CD8 + tumor-infiltrating lymphocyte (TIL) density, two major response biomarkers of PD-1/PD-L1 blockade, between paired primary and brain metastatic lesions in advanced NSCLC. We observed that among primary lesions or BMs, only a small number of patients harbored common PD-L1 expression on both tumor cells and tumor-infiltrating immune cells. Additionally, we found that the numbers of CD8 + TILs were significantly fewer in BMs than in primary lung cancers. Low stromal CD8 + TIL numbers in BMs were associated with significantly shorter overall survival compared to high stromal CD8 + TIL counts. Notably, we demonstrated a discrepancy in PD-L1 expression and CD8 + TIL density between primary lung cancers and their corresponding BMs. Such heterogeneities are significantly associated with the time at which BMs occurred. Our study emphasizes the spatial and temporal heterogeneity of biomarkers for anti-PD-1/PD-L1 therapy, which should be concerned in clinical practice. Copyright © 2018 Elsevier Inc. All rights reserved.

A conceptual approach to the masking effect of measures of disproportionality.

PubMed

Maignen, Francois; Hauben, Manfred; Hung, Eric; Holle, Lionel Van; Dogne, Jean-Michel

2014-02-01

Masking is a statistical issue by which true signals of disproportionate reporting are hidden by the presence of other products in the database. Masking is currently not perfectly understood. There is no algorithm to identify the potential masking drugs to remove them for subsequent analyses of disproportionality. The primary objective of our study is to develop a mathematical framework for assessing the extent and impact of the masking effect of measures of disproportionality. We have developed a masking ratio that quantifies the masking effect of a given product. We have conducted a simulation study to validate our algorithm. The masking ratio is a measure of the strength of the masking effect whether the analysis is performed at the report or event level, and the manner in which reports are allocated to cells in the contingency table significantly impact the masking mechanisms. The reports containing both the product of interest and the masking product need to be handled appropriately. The proposed algorithm can use simplified masking provided that underlying assumptions (in particular the size of the database) are verified. For any event, the strongest masking effect is associated with the drug with the highest number of records (reports excluding the product of interest). Our study provides significant insights with practical implications for real-world pharmacovigilance that are supported by both real and simulated data. The public health impact of masking is still unknown. Copyright © 2013 John Wiley & Sons, Ltd.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

Marquardt's Phi mask: pitfalls of relying on fashion models and the golden ratio to describe a beautiful face.

PubMed

Holland, E

2008-03-01

Stephen Marquardt has derived a mask from the golden ratio that he claims represents the "ideal" facial archetype. Many have found his mask convincing, including cosmetic surgeons. However, Marquardt's mask is associated with numerous problems. The method used to examine goodness of fit with the proportions in the mask is faulty. The mask is ill-suited for non-European populations, especially sub-Saharan Africans and East Asians. The mask also appears to approximate the face shape of masculinized European women. Given that the general public strongly and overwhelmingly prefers above average facial femininity in women, white women seeking aesthetic facial surgery would be ill-advised to aim toward a better fit with Marquardt's mask. This article aims to show the proper way of assessing goodness of fit with Marquardt's mask, to address the shape of the mask as it pertains to masculinity-femininity, and to discuss the broader issue of an objective assessment of facial attractiveness. Generalized Procrustes analysis is used to show how goodness of fit with Marquardt's mask can be assessed. Thin-plate spline analysis is used to illustrate visually how sample faces, including northwestern European averages, differ from Marquardt's mask. Marquardt's mask best describes the facial proportions of masculinized white women as seen in fashion models. Marquardt's mask does not appear to describe "ideal" face shape even for white women because its proportions are inconsistent with the optimal preferences of most people, especially with regard to femininity.

Kawachin na ri kitzij-kipixab' Qanan Qatat--Florezcan las palabras de los hombres de maiz (The Blossoming of Our Ancestors' Words). [CD-ROM].

ERIC Educational Resources Information Center

Academy for Educational Development, Washington, DC.

This CD-ROM is part of an interactive and dynamic multimedia package of information and games for learning K'iche' and Ixil. This CD-ROM contains selected radio programs for preschool students, scripted from the four storybooks created by Project "Enlace Quiche." It includes stories in K'iche', Ixil, and Spanish. (VWL)

Reinforced Masks for Ion Plating of Solar Cells

NASA Technical Reports Server (NTRS)

Conley, W. R.; Swick, E. G.; Volkers, J. C.

1987-01-01

Proposed mask for ion plating of surface electrodes on silicon solar cells reinforced to hold shape better during handling. Fabrication process for improved mask similar to conventional mask. Additional cuts and bends made in wide diametral strip to form bridges between pairs of mask fingers facing each other across this strip. Bridges high enough not to act as masks so entire strip area plated.

Comparison of the OxyMask and Venturi mask in the delivery of supplemental oxygen: Pilot study in oxygen-dependent patients

PubMed Central

Beecroft, Jaime M; Hanly, Patrick J

2006-01-01

BACKGROUND: The OxyMask (Southmedic Inc, Canada) is a new face mask for oxygen delivery that uses a small ‘diffuser’ to concentrate and direct oxygen toward the mouth and nose. The authors hypothesized that this unique design would enable the OxyMask to deliver oxygen more efficiently than a Venturi mask (Hudson RCI, USA) in patients with chronic hypoxemia. METHODS: Oxygen-dependent patients with chronic, stable respiratory disease were recruited to compare the OxyMask and Venturi mask in a randomized, single-blind, cross-over design. Baseline blood oxygen saturation (SaO2) was established breathing room air, followed in a random order by supplemental oxygen through the OxyMask or Venturi mask. Oxygen delivery was titrated to maintain SaO2 4% to 5% and 8% to 9% above baseline for two separate 30 min periods of stable breathing. Oxygen flow rate, partial pressure of inspired and expired oxygen (PO2) and carbon dioxide (PCO2), minute ventilation, heart rate, nasal and oral breathing, SaO2 and transcutaneous PCO2 were collected continuously. The study was repeated following alterations to the OxyMask design, which improved clearance of carbon dioxide. RESULTS: Thirteen patients, aged 28 to 79 years, were studied initially using the original OxyMask. Oxygen flow rate was lower, inspired PO2 was higher and expired PO2 was lower while using the OxyMask. Minute ventilation and inspired and expired PCO2 were significantly higher while using the OxyMask, whereas transcutaneous PCO2, heart rate and the ratio of nasal to oral breathing did not change significantly throughout the study. Following modification of the OxyMask, 13 additional patients, aged 18 to 79 years, were studied using the same protocol. The modified OxyMask provided a higher inspired PO2 at a lower flow rate, without evidence of carbon dioxide retention. CONCLUSIONS: Oxygen is delivered safely and more efficiently by the OxyMask than by the Venturi mask in stable oxygen-dependent patients. PMID:16896425

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

NASA Astrophysics Data System (ADS)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Maori-Inspired Masks

ERIC Educational Resources Information Center

Henn-Percarpio, Cynthia

2013-01-01

During a recent summer, the author participated in a Hands Across the Water Teacher Exchange Program to New Zealand. This experience gave her the opportunity to see how people in a different country live on a day-to-day basis. For her, one of the more interesting aspects of New Zealand was its indigenous culture, the Maori. In this activity, the…

Making Connections with the Past: (Un)Masking African American History at a Neighborhood Community Center

ERIC Educational Resources Information Center

Stiler, Gary; Allen, Lisa

2006-01-01

The Carver Community Center in Evansville, Indiana, uses an academic enrichment program to support neighborhood students. The curriculum involves children in learning about African-American literary traditions and folk art. The Center's work is based on the premise that African-American children need to encounter the reality of history as in…

Noncyanide Stripper Placement Program. Phase 1

DTIC Science & Technology

1989-05-01

bronze (brazing material ) from low-alloy steels , heat and corrosion resistant...STRIPPERS AND BASIS MATERIALS FROM WHICH THE COATINGS ARE REMOVED (FROM T.O.42C2-1-7) Surface Coating Basis Material Brass Low-Alloy Steels Bronze Low...braze materials , low alloy steels , and heat and corrosion resistant steels . Additional tests were performed on three masking materials routinely

Barriers to mask wearing for influenza-like illnesses among urban Hispanic households.

PubMed

Ferng, Yu-hui; Wong-McLoughlin, Jennifer; Barrett, Angela; Currie, Leanne; Larson, Elaine

2011-01-01

To identify barriers to mask wearing and to examine the factors associated with the willingness to wear masks among households. We used data sources from a study assessing the impact of 3 nonpharmaceutical interventions on the rates of influenza: exit interviews; home visits with a subset of the mask group; and a focus group. Risk perception score, univariate analysis, and logistic regression were conducted to identify the characteristics and predictors of mask use. Thematic barriers to mask wearing were identified from qualitative data obtained at home visits and focus group. Respondents from the mask group, when compared with the nonmask group, demonstrated higher risk perception scores concerning influenza (maximum score: 60, means: 37.6 and 30.2, p<.001) and increased perception of effectiveness of mask wearing (maximum score: 10, means: 7.8 and 7.3, p=.043). There was no significant association between demographic, attitudinal, or knowledge variables and adherence to wearing masks. Thematic barriers were identified such as social acceptability of mask use, comfort and fit, and perception of the risk/need for masks. Face masks may not be an effective intervention for seasonal or pandemic influenza unless the risk perception of influenza is high. Dissemination of culturally appropriate mask use information by health authorities and providers must be emphasized when educating the public. © 2010 Wiley Periodicals, Inc.

Mask pressure effects on the nasal bridge during short-term noninvasive ventilation

PubMed Central

Brill, Anne-Kathrin; Pickersgill, Rachel; Moghal, Mohammad; Morrell, Mary J.; Simonds, Anita K.

2018-01-01

The aim of this study was to assess the influence of different masks, ventilator settings and body positions on the pressure exerted on the nasal bridge by the mask and subjective comfort during noninvasive ventilation (NIV). We measured the pressure over the nasal bridge in 20 healthy participants receiving NIV via four different NIV masks (three oronasal masks, one nasal mask) at three different ventilator settings and in the seated or supine position. Objective pressure measurements were obtained with an I-Scan pressure-mapping system. Subjective comfort of the mask fit was assessed with a visual analogue scale. The masks exerted mean pressures between 47.6±29 mmHg and 91.9±42.4 mmHg on the nasal bridge. In the supine position, the pressure was lower in all masks (57.1±31.9 mmHg supine, 63.9±37.3 mmHg seated; p<0.001). With oronasal masks, a change of inspiratory positive airway pressure (IPAP) did not influence the objective pressure over the nasal bridge. Subjective discomfort was associated with higher IPAP and positively correlated with the pressure on the skin. Objective measurement of pressure on the skin during mask fitting might be helpful for mask selection. Mask fitting in the supine position should be considered in the clinical routine. PMID:29637077

Performance and stability of mask process correction for EBM-7000

NASA Astrophysics Data System (ADS)

Saito, Yasuko; Chen, George; Wang, Jen-Shiang; Bai, Shufeng; Howell, Rafael; Li, Jiangwei; Tao, Jun; VanDenBroeke, Doug; Wiley, Jim; Takigawa, Tadahiro; Ohnishi, Takayuki; Kamikubo, Takashi; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi

2010-05-01

In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-70001), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm2) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.

How color, regularity, and good Gestalt determine backward masking.

PubMed

Sayim, Bilge; Manassi, Mauro; Herzog, Michael

2014-06-18

The strength of visual backward masking depends on the stimulus onset asynchrony (SOA) between target and mask. Recently, it was shown that the conjoint spatial layout of target and mask is as crucial as SOA. Particularly, masking strength depends on whether target and mask group with each other. The same is true in crowding where the global spatial layout of the flankers and target-flanker grouping determine crowding strength. Here, we presented a vernier target followed by different flanker configurations at varying SOAs. Similar to crowding, masking of a red vernier target was strongly reduced for arrays of 10 green compared with 10 red flanking lines. Unlike crowding, single green lines flanking the red vernier showed strong masking. Irregularly arranged flanking lines yielded stronger masking than did regularly arranged lines, again similar to crowding. While cuboid flankers reduced crowding compared with single lines, this was not the case in masking. We propose that, first, masking is reduced when the flankers are part of a larger spatial structure. Second, spatial factors counteract color differences between the target and the flankers. Third, complex Gestalts, such as cuboids, seem to need longer processing times to show ungrouping effects as observed in crowding. Strong parallels between masking and crowding suggest similar underlying mechanism; however, temporal factors in masking additionally modulate performance, acting as an additional grouping cue. © 2014 ARVO.

System for generating two-dimensional masks from a three-dimensional model using topological analysis

DOEpatents

Schiek, Richard [Albuquerque, NM

2006-06-20

A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

Equivalence of nasal and oronasal masks during initial CPAP titration for obstructive sleep apnea syndrome.

PubMed

Teo, Ming; Amis, Terence; Lee, Sharon; Falland, Karina; Lambert, Stephen; Wheatley, John

2011-07-01

Continuous positive airway pressure (CPAP) titration studies are commonly performed using a nasal mask but some patients may prefer a full-face or oronasal mask. There is little evidence regarding the equivalence of different mask interfaces used to initiate treatment. We hypothesized that oronasal breathing when using an oronasal mask increases upper airway collapsibility and that a higher pressure may be required to maintain airway patency. We also assessed patient preferences for the 2 mask interfaces. Prospective, randomized, cross-over design with 2 consecutive CPAP titration nights. Accredited laboratory in a university hospital. Twenty-four treatment-naive subjects with obstructive sleep apnea syndrome and respiratory disturbance index of greater than 15 events per hour. CPAP titration was performed using an auto-titrating machine with randomization to a nasal or oronasal mask, followed by a second titration night using the alternate mask style. There was no significant difference in the mean pressures determined between nasal and oronasal masks, although 43% of subjects had nasal-to-oronasal mask-pressure differences of 2 cm H(2)O or more. Residual respiratory events, arousals, and measured leak were all greater with the oronasal mask. Seventy-nine percent of subjects preferred the nasal mask. Patients with obstructive sleep apnea syndrome can generally switch between nasal and oronasal masks without changing machine pressure, although there are individual differences that may be clinically significant. Measured leak is greater with the oronasal mask. Most patients with obstructive sleep apnea syndrome prefer a nasal mask as the interface for initiation of CPAP. Australian New Zealand Clinical Trials Registry (ANZCTR). ACTRN: ACTRN12611000243910. URL: http://www.ANZCTR.org.au/ACTRN12611000243910.aspx

Mask aligner for ultrahigh vacuum with capacitive distance control

NASA Astrophysics Data System (ADS)

Bhaskar, Priyamvada; Mathioudakis, Simon; Olschewski, Tim; Muckel, Florian; Bindel, Jan Raphael; Pratzer, Marco; Liebmann, Marcus; Morgenstern, Markus

2018-04-01

We present a mask aligner driven by three piezomotors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed at a μm distance from the sample surface, while keeping it parallel to the surface, without touching the sample by the mask a priori. Samples and masks can be exchanged in-situ and the mask can additionally be displaced parallel to the surface. We demonstrate an edge sharpness of the deposited structures below 100 nm, which is likely limited by the diffusion of the deposited Au on Si(111).

THEMIS, a new T cell specific protein important for late thymocyte development

PubMed Central

Lesourne, Renaud; Uehara, Shoji; Lee, Jan; Song, Ki-Duk; Li, LiQi; Pinkhasov, Julia; Zhang, Yongqing; Weng, Nan-Ping; Wildt, Kathryn F.; Wang, Lie; Bosselut, Remy; Love, Paul E.

2010-01-01

During positive selection, thymocytes transition through a stage during which T cell receptor (TCR) signaling controls CD4 versus CD8 lineage choice and subsequent maturation. Here, we describe a new T cell specific protein, THEMIS, that performs a distinct function during this stage. In Themis-/- mice, thymocyte selection was impaired and the number of transitional CD4+CD8int thymocytes as well as CD4 and CD8 single positive thymocytes was decreased. Remarkably, although no overt TCR-proximal signaling deficiencies were detected, Themis-/-CD4+CD8int thymocytes exhibited developmental defects consistent with attenuated signaling that were reversible by increased TCR stimulation. These results identify THEMIS as a critical component of the T cell developmental program and suggest that THEMIS functions to sustain and/or integrate signals required for proper lineage commitment and maturation. PMID:19597498

Respiratory Source Control Using Surgical Masks With Nanofiber Media

PubMed Central

Skaria, Shaji D.; Smaldone, Gerald C.

2014-01-01

Background: Potentially infected individuals (‘source’) are sometimes encouraged to use face masks to reduce exposure of their infectious aerosols to others (‘receiver’). To improve compliance with Respiratory Source Control via face mask and therefore reduce receiver exposure, a mask should be comfortable and effective. We tested a novel face mask designed to improve breathability and filtration using nanofiber filtration. Methods: Using radiolabeled test aerosols and a calibrated exposure chamber simulating source to receiver interaction, facepiece function was measured with a life-like ventilated manikin model. Measurements included mask airflow resistance (pressure difference during breathing), filtration, (mask capture of exhaled radiolabeled test aerosols), and exposure (the transfer of ‘infectious’ aerosols from the ‘source’ to a ‘receiver’). Polydisperse aerosols were measured at the source with a mass median aerodynamic diameter of 0.95 µm. Approximately 90% of the particles were <2.0 µm. Tested facepieces included nanofiber prototype surgical masks, conventional surgical masks, and for comparison, an N95-class filtering facepiece respirator (commonly known as an ‘N95 respirator’). Airflow through and around conventional surgical face mask and nanofiber prototype face mask was visualized using Schlieren optical imaging. Results: Airflow resistance [ΔP, cmH2O] across sealed surgical masks (means: 0.1865 and 0.1791 cmH2O) approached that of the N95 (mean: 0.2664 cmH2O). The airflow resistance across the nanofiber face mask whether sealed or not sealed (0.0504 and 0.0311 cmH2O) was significantly reduced in comparison. In addition, ‘infected’ source airflow filtration and receiver exposure levels for nanofiber face masks placed on the source were comparable to that achieved with N95 placed on the source; 98.98% versus 82.68% and 0.0194 versus 0.0557, respectively. Compared to deflection within and around the conventional face masks, Schlieren optical imaging demonstrated enhanced airflow through the nanofiber mask. Conclusions: Substituting nanofiber for conventional filter media significantly reduced face mask airflow resistance directing more airflow through the face mask resulting in enhanced filtration. Respiratory source control efficacy similar to that achieved through the use of an N95 respirator worn by the source and decreased airflow resistance using nanofiber masks may improve compliance and reduce receiver exposure. PMID:24737728

Respiratory source control using surgical masks with nanofiber media.

PubMed

Skaria, Shaji D; Smaldone, Gerald C

2014-07-01

Potentially infected individuals ('source') are sometimes encouraged to use face masks to reduce exposure of their infectious aerosols to others ('receiver'). To improve compliance with Respiratory Source Control via face mask and therefore reduce receiver exposure, a mask should be comfortable and effective. We tested a novel face mask designed to improve breathability and filtration using nanofiber filtration. Using radiolabeled test aerosols and a calibrated exposure chamber simulating source to receiver interaction, facepiece function was measured with a life-like ventilated manikin model. Measurements included mask airflow resistance (pressure difference during breathing), filtration, (mask capture of exhaled radiolabeled test aerosols), and exposure (the transfer of 'infectious' aerosols from the 'source' to a 'receiver'). Polydisperse aerosols were measured at the source with a mass median aerodynamic diameter of 0.95 µm. Approximately 90% of the particles were <2.0 µm. Tested facepieces included nanofiber prototype surgical masks, conventional surgical masks, and for comparison, an N95-class filtering facepiece respirator (commonly known as an 'N95 respirator'). Airflow through and around conventional surgical face mask and nanofiber prototype face mask was visualized using Schlieren optical imaging. Airflow resistance [ΔP, cmH2O] across sealed surgical masks (means: 0.1865 and 0.1791 cmH2O) approached that of the N95 (mean: 0.2664 cmH2O). The airflow resistance across the nanofiber face mask whether sealed or not sealed (0.0504 and 0.0311 cmH2O) was significantly reduced in comparison. In addition, 'infected' source airflow filtration and receiver exposure levels for nanofiber face masks placed on the source were comparable to that achieved with N95 placed on the source; 98.98% versus 82.68% and 0.0194 versus 0.0557, respectively. Compared to deflection within and around the conventional face masks, Schlieren optical imaging demonstrated enhanced airflow through the nanofiber mask. Substituting nanofiber for conventional filter media significantly reduced face mask airflow resistance directing more airflow through the face mask resulting in enhanced filtration. Respiratory source control efficacy similar to that achieved through the use of an N95 respirator worn by the source and decreased airflow resistance using nanofiber masks may improve compliance and reduce receiver exposure. © The Author 2014. Published by Oxford University Press on behalf of the British Occupational Hygiene Society.

Active membrane masks for improved overlay performance in proximity lithography

NASA Astrophysics Data System (ADS)

Huston, Dryver R.; Plumpton, James; Esser, Brian; Sullivan, Gerald A.

2004-07-01

Membrane masks are thin (2 micron x 35 mm x 35 mm) structures that carry the master exposure patterns in proximity (X-ray) lithography. With the continuous drive to the printing of ever-finer features in microelectronics, the reduction of mask-wafer overlay positioning errors by passive rigid body positioning and passive stress control in the mask becomes impractical due to nano and sub-micron scale elastic deformations in the membrane mask. This paper describes the design, mechanics and performance of a system for actively stretching a membrane mask in-plane to control overlay distortion. The method uses thermoelectric heating/cooling elements placed on the mask perimeter. The thermoelectric elements cause controlled thermoelastic deformations in the supporting wafer, which in turn corrects distortions in the membrane mask. Silicon carbide masks are the focus of this study, but the method is believed to be applicable to other mask materials, such as diamond. Experimental and numerical results will be presented, as well as a discussion of the design issues and related design decisions.

Mask automation: need a revolution in mask makers and equipment industry

NASA Astrophysics Data System (ADS)

Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

2013-09-01

As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

Communication masking in marine mammals: A review and research strategy.

PubMed

Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

2016-02-15

Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Evaluation of CS (o-chlorobenzylidene malononitrile) concentrations during U.S. Army mask confidence training.

PubMed

Hout, Joseph J; Kluchinsky, Timothy; LaPuma, Peter T; White, Duvel W

2011-10-01

All soldiers in the U.S. Army are required to complete mask confidence training with o-chlorobenzylidene malononitrile (CS). To instill confidence in the protective capability of the military protective mask, CS is thermally dispersed in a room where soldiers wearing military protective masks are required to conduct various physical exercises, break the seal of their mask, speak, and remove their mask. Soldiers immediately feel the irritating effects of CS when the seal of the mask is broken, which reinforces the mask's ability to shield the soldier from airborne chemical hazards. In the study described in this article, the authors examined the CS concentration inside a mask confidence chamber operated in accordance with U.S. Army training guidelines. The daily average CS concentrations ranged from 2.33-3.29 mg/m3 and exceeded the threshold limit value ceiling, the recommended exposure limit ceiling, and the concentration deemed immediately dangerous to life and health. The minimum and maximum CS concentration used during mask confidence training should be evaluated.

Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation

NASA Astrophysics Data System (ADS)

Ban, Chung-Hyun; Park, Eun-Sang; Park, Jae-Hun; Oh, Hye-Keun

2018-06-01

Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns.

Impact of input mask signals on delay-based photonic reservoir computing with semiconductor lasers.

PubMed

Kuriki, Yoma; Nakayama, Joma; Takano, Kosuke; Uchida, Atsushi

2018-03-05

We experimentally investigate delay-based photonic reservoir computing using semiconductor lasers with optical feedback and injection. We apply different types of temporal mask signals, such as digital, chaos, and colored-noise mask signals, as the weights between the input signal and the virtual nodes in the reservoir. We evaluate the performance of reservoir computing by using a time-series prediction task for the different mask signals. The chaos mask signal shows superior performance than that of the digital mask signals. However, similar prediction errors can be achieved for the chaos and colored-noise mask signals. Mask signals with larger amplitudes result in better performance for all mask signals in the range of the amplitude accessible in our experiment. The performance of reservoir computing is strongly dependent on the cut-off frequency of the colored-noise mask signals, which is related to the resonance of the relaxation oscillation frequency of the laser used as the reservoir.

Study of CdTe/CdS solar cell at low power density for low-illumination applications

NASA Astrophysics Data System (ADS)

Devi, Nisha; Aziz, Anver; Datta, Shouvik

2016-05-01

In this paper, we numerically investigate CdTe/CdS PV cell properties using a simulation program Solar Cell Capacitance Simulator in 1D (SCAPS-1D). A simple structure of CdTe PV cell has been optimized to study the effect of temperature, absorber thickness and work function at very low incident power. Objective of this research paper is to build an efficient and cost effective solar cell for portable electronic devices such as portable computers and cell phones that work at low incident power because most of such devices work at diffused and reflected sunlight. In this report, we simulated a simple CdTe PV cell at very low incident power, which gives good efficiency.

Increased dead space in face mask continuous positive airway pressure in neonates.

PubMed

Hishikawa, Kenji; Fujinaga, Hideshi; Ito, Yushi

2017-01-01

Continuous positive airway pressure (CPAP) by face mask is commonly performed in newborn resuscitation. We evaluated the effect of face mask CPAP on system dead space. Face mask CPAP increases dead space. A CPAP model study. We estimated the volume of the inner space of the mask. We devised a face mask CPAP model, in which the outlet of the mask was covered with plastic; and three modified face mask CPAP models, in which holes were drilled near to the cushion of the covered face mask to alter the air exit. We passed a continuous flow of 21% oxygen through each model and we controlled the inner pressure to 5 cmH 2 O by adjusting the flow-relief valve. To evaluate the ventilation in the inner space of each model, we measured the oxygen concentration rise time, that is, the time needed for the oxygen concentration of each model to reach 35% after the oxygen concentration of the continuous flow was raised from 21% to 40%. The volume of inner space of the face mask was 38.3 ml. Oxygen concentration rise time in the face mask CPAP model was significantly longer at various continuous flow rates and points of the inner space of the face mask compared with that of the modified face mask CPAP model. Our study indicates that face mask CPAP leads to an increase in dead space and a decrease in ventilation efficiency under certain circumstances. Pediatr Pulmonol. 2017;52:107-111. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Installation Restoration Program, Phase 2. Confirmation/Quantification, Stage 2, Hancock Air National Guard Base, Syracuse, New York. Volume 2. Appendices

DTIC Science & Technology

1989-06-01

4) 0) C)-D C 0401 C) 0 -c eL4 CD CD r, r- *,-A (mz61L 00 rC- 4ic 0Cm q) CD) C) -DC DC )C wl ~ ~ ’ %0 0 0 0 koko%04 4 J 4 J I+ C-M 44. 0 4J 44) -) 4...SAC) and 5,6-Dihydro-5-Azacytidine (H5AC) in L1210 Cell Culture Samples by Gas Chromatography (GC) and Mass Spectrometry (MS), C.J. Nielson, S.W

Equivalence of Nasal and Oronasal Masks during Initial CPAP Titration for Obstructive Sleep Apnea Syndrome

PubMed Central

Teo, Ming; Amis, Terence; Lee, Sharon; Falland, Karina; Lambert, Stephen; Wheatley, John

2011-01-01

Study Objective: Continuous positive airway pressure (CPAP) titration studies are commonly performed using a nasal mask but some patients may prefer a full-face or oronasal mask. There is little evidence regarding the equivalence of different mask interfaces used to initiate treatment. We hypothesized that oronasal breathing when using an oronasal mask increases upper airway collapsibility and that a higher pressure may be required to maintain airway patency. We also assessed patient preferences for the 2 mask interfaces. Design: Prospective, randomized, cross-over design with 2 consecutive CPAP titration nights. Setting: Accredited laboratory in a university hospital. Patients or Participants: Twenty-four treatment-naive subjects with obstructive sleep apnea syndrome and respiratory disturbance index of greater than 15 events per hour. Interventions: CPAP titration was performed using an auto-titrating machine with randomization to a nasal or oronasal mask, followed by a second titration night using the alternate mask style. Measurements and Results: There was no significant difference in the mean pressures determined between nasal and oronasal masks, although 43% of subjects had nasal-to-oronasal mask-pressure differences of 2 cm H2O or more. Residual respiratory events, arousals, and measured leak were all greater with the oronasal mask. Seventy-nine percent of subjects preferred the nasal mask. Conclusions: Patients with obstructive sleep apnea syndrome can generally switch between nasal and oronasal masks without changing machine pressure, although there are individual differences that may be clinically significant. Measured leak is greater with the oronasal mask. Most patients with obstructive sleep apnea syndrome prefer a nasal mask as the interface for initiation of CPAP. Clinical Trial Registration: Australian New Zealand Clinical Trials Registry (ANZCTR). ACTRN: ACTRN12611000243910. URL: http://www.ANZCTR.org.au/ACTRN12611000243910.aspx Citation: Teo M; Amis T; Lee S; Falland K; Lambert S; Wheatley J. Equivalence of nasal and oronasal masks during initial CPAP titration for obstructive sleep apnea syndrome. SLEEP 2011;34(7):951-955. PMID:21731145

Mask ventilation with two different face masks in the delivery room for preterm infants: a randomized controlled trial.

PubMed

Cheung, D; Mian, Q; Cheung, P-Y; O'Reilly, M; Aziz, K; van Os, S; Pichler, G; Schmölzer, G M

2015-07-01

If an infant fails to initiate spontaneous breathing after birth, international guidelines recommend a positive pressure ventilation (PPV). However, PPV by face mask is frequently inadequate because of leak between the face and mask. Despite a variety of available face masks, none have been prospectively compared in a randomized fashion. We aimed to evaluate and compare leak between two commercially available round face masks (Fisher & Paykel (F&P) and Laerdal) in preterm infants <33 weeks gestational age in the delivery room. Infants born at the Royal Alexandra Hospital from April to September 2013 at <33 weeks gestational age who received mask PPV in the delivery room routinely had a flow sensor placed between the mask and T-piece resuscitator. Infants were randomly assigned to receive PPV with either a F&P or Laerdal face mask. All resuscitators were trained in the use of both face masks. We compared mask leak, airway pressures, tidal volume and ventilation rate between the two groups. Fifty-six preterm infants (n=28 in each group) were enrolled; mean±s.d. gestational age 28±3 weeks; birth weight 1210±448 g; and 30 (52%) were male. Apgar scores at 1 and 5 min were 5±3 and 7±2, respectively. Infants randomized to the F&P face mask and Laerdal face mask had similar mask leak (30 (25-38) versus 35 (24-46)%, median (interquartile range), respectively, P=0.40) and tidal volume (7.1 (4.9-8.9) versus 6.6 (5.2-8.9) ml kg(-1), P=0.69) during PPV. There were no significant differences in ventilation rate, inflation time or airway pressures between groups. The use of either face mask during PPV in the delivery room yields similar mask leak in preterm infants <33 weeks gestational age.

Computerized Dead-Space Volume Measurement of Face Masks Applied to Simulated Faces.

PubMed

Amirav, Israel; Luder, Anthony S; Halamish, Asaf; Marzuk, Chatib; Daitzchman, Marcelo; Newhouse, Michael T

2015-09-01

The dead-space volume (VD) of face masks for metered-dose inhaler treatments is particularly important in infants and young children with asthma, who have relatively low tidal volumes. Data about VD have been traditionally obtained from water displacement measurements, in which masks are held against a flat surface. Because, in real life, masks are placed against the face, VD is likely to differ considerably between masks depending upon their contour and fit. The aim of this study was to develop an accurate and reliable way to measure VD electronically and to apply this technique by comparing the electronic VD of commonly available face masks. Average digital faces were obtained from 3-dimensional images of 270 infants and children. Commonly used face masks (small and medium) from various manufacturers (Monaghan Medical, Pari Respiratory Equipment, Philips Respironics, and InspiRx) were scanned and digitized by means of computed tomography. Each mask was electronically applied to its respective digital face, and the VD enclosed (mL) was computerized and precisely measured. VD varied between 22.6 mL (SootherMask, InspiRx) and 43.1 mL (Vortex, Pari) for small masks and between 41.7 mL (SootherMask) and 71.5 mL (AeroChamber, Monaghan Medical) for medium masks. These values were significantly lower and less variable than measurements obtained by water displacement. Computerized techniques provide an innovative and relatively simple way of accurately measuring the VD of face masks applied to digital faces. As determined by computerized measurement using average-size virtual faces, the InspiRx masks had a significantly smaller VD for both small and medium masks compared with the other masks. This is of considerable importance with respect to aerosol dose and delivery time, particularly in young children. (ClinicalTrials.gov registration NCT01274299.). Copyright © 2015 by Daedalus Enterprises.

Visual Masking During Pursuit Eye Movements

ERIC Educational Resources Information Center

White, Charles W.

1976-01-01

Visual masking occurs when one stimulus interferes with the perception of another stimulus. Investigates which matters more for visual masking--that the target and masking stimuli are flashed on the same part of the retina, or, that the target and mask appear in the same place. (Author/RK)