The effect of changing the magnetic field strength on HiPIMS deposition rates

NASA Astrophysics Data System (ADS)

Bradley, J. W.; Mishra, A.; Kelly, P. J.

2015-06-01

The marked difference in behaviour between HiPIMS and conventional dc or pulsed-dc magnetron sputtering discharges with changing magnetic field strengths is demonstrated through measurements of deposition rate. To provide a comparison between techniques the same circular magnetron was operated in the three excitation modes at a fixed average power of 680 W and a pressure of 0.54 Pa in the non-reactive sputtering of titanium. The total magnetic field strength B at the cathode surface in the middle of the racetrack was varied from 195 to 380 G. DC and pulsed-dc discharges show the expected behaviour that deposition rates fall with decreasing B (here by ~25-40%), however the opposite trend is observed in HiPIMS with deposition rates rising by a factor of 2 over the same decrease in B. These observations are understood from the stand point of the different composition and transport processes of the depositing metal flux between the techniques. In HiPIMS, this flux is largely ionic and slow post-ionized sputtered particles are subject to strong back attraction to the target by a retarding plasma potential structure ahead of them. The height of this potential barrier is known to increase with increasing B. From a simple phenomenological model of the sputtered particles fluxes, and using the measured deposition rates from the different techniques as inputs, the combined probabilities of ionization, α, and back attraction, β, of the metal species in HiPIMS has been calculated. There is a clear fall in αβ (from ~0.9 to ~0.7) with decreasing B-field strengths, we argue primarily due to a weakening of electrostatic ion back attraction, so leading to higher deposition rates. The results indicate that careful design of magnetron field strengths should be considered to optimise HiPIMS deposition rates.

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

NASA Astrophysics Data System (ADS)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Punitha, K.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-03-21

In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsingmore » frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.« less

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

Reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

2012-10-01

Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

NASA Astrophysics Data System (ADS)

Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

2012-10-01

A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10-4 Ω cm with the carrier concentration of 1.65 × 1021 cm-3 and Hall mobility of 11.3 cm2/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

PubMed

Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

2009-06-01

A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes.

Achieving omnidirectional photonic band gap in sputter deposited TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jena, S., E-mail: shuvendujena9@gmail.com; Tokas, R. B.; Sarkar, P.

2015-06-24

The multilayer structure of TiO{sub 2}/SiO{sub 2} (11 layers) as one dimensional photonic crystal (1D PC) has been designed and then fabricated by using asymmetric bipolar pulse DC magnetron sputtering technique for omnidirectional photonic band gap. The experimentally measured photonic band gap (PBG) in the visible region is well matched with the theoretically calculated band structure (ω vs. k) diagram. The experimentally measured omnidirectional reflection band of 44 nm over the incident angle range of 0°-70° is found almost matching within the theoretically calculated band.

High-acoustic-impedance tantalum oxide layers for insulating acoustic reflectors.

PubMed

Capilla, Jose; Olivares, Jimena; Clement, Marta; Sangrador, Jesús; Iborra, Enrique; Devos, Arnaud

2012-03-01

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended for use as high-impedance films of acoustic reflectors for solidly mounted resonators operating in the gigahertz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed dc powers, and substrate biases. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is assessed by deriving the mass density from X-ray reflectometry measurements and the acoustic velocity from picosecond acoustic spectroscopy and the analysis of the frequency response of the test resonators.

Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com; Pandey, Nidhi; Behera, Layanta

2016-05-23

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films.more » In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.« less

Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

PubMed

Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

2008-05-01

Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

NASA Astrophysics Data System (ADS)

Lee, J.; Gao, W.; Li, Z.; Hodgson, M.; Metson, J.; Gong, H.; Pal, U.

2005-05-01

Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made.

Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

2014-12-01

The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

Fabrication of biaxially oriented YBCO on (001) biaxially oriented yttria-stabilized-zirconia on polycrystalline substrates

NASA Astrophysics Data System (ADS)

Arendt, P.; Foltyn, S.; Wu, Xin Di; Townsend, J.; Adams, C.; Hawley, M.; Tiwari, P.; Maley, M.; Willis, J.; Moseley, D.

Ion-assisted, ion-beam sputter deposition is used to obtain (001) biaxially oriented films of cubic yttria stabilized zirconia (YSZ) on polycrystalline metal substrates. Yttrium barium copper oxide (YBCO) is then heteroepitaxially pulse laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14 deg and 10 deg, respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/sq cm at 75 K and 0 T. At 75 K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

High rate DC-reactive sputter deposition of Y 2O 3 film on the textured metal substrate for the superconducting coated conductor

NASA Astrophysics Data System (ADS)

Kim, Ho-Sup; Park, Chan; Ko, Rock-Kil; Shi, Dongqui; Chung, Jun-Ki; Ha, Hong-Soo; Park, Yu-Mi; Song, Kyu-Jeong; Youm, Do-Jun

2005-10-01

Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77 K, self field), and Jc (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm2, respectively.

Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

NASA Astrophysics Data System (ADS)

Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

2015-11-01

For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

NASA Technical Reports Server (NTRS)

Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

1973-01-01

The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

Experimental study on TiN coated racetrack-type ceramic pipe

NASA Astrophysics Data System (ADS)

Wang, Jie; Xu, Yan-Hui; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

2015-11-01

TiN film was coated on the internal surface of a racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. The highest deposition rate was 156 nm/h, which was obtained by magnetron sputtering coating. Based on AFM, SEM and XPS test results, the properties of TiN film, such as film roughness and surface morphology, were analyzed. Furthermore, the deposition rates were studied with two different cathode types, Ti wires and Ti plate. According to the SEM test results, the deposition rate of TiN/Ti film was about 800 nm/h with Ti plate cathode by DC magnetron sputtering. Using Ti plate cathode rather than Ti wire cathode can greatly improve the film deposition rate. Supported by National Nature Science Foundation of China (11075157)

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Metal-Insulator-Metal Diode Process Development for Energy Harvesting Applications

DTIC Science & Technology

2010-04-01

Sputter Tool Dep Method: Sputtering (DC Magnetron ) Recipe: MC_Pt 1640A_TiO2 1000A_Ti 2000A_500C_1a MC_Pt 1640A_TiO2 1000A_Ti 2000A_300C_1a MC_Pt...thin films were sputtered onto silicon substrates with silicon dioxide overlayers. I-V measurements were taken using an electrical characterization...deposition of the entire MIM material stack to be done without breaking the vacuum within a multi-material system DC sputtering tool. A CAD layout of a MIM

Fabrication of Long Period Gratings by Periodically Removing the Coating of Cladding-Etched Single Mode Optical Fiber Towards Optical Fiber Sensor Development.

PubMed

Ascorbe, Joaquin; Corres, Jesus M; Del Villar, Ignacio; Matias, Ignacio R

2018-06-07

Here, we present a novel method to fabricate long period gratings using standard single mode optical fibers (SMF). These optical devices were fabricated in a three-step process, which consisted of etching the SMF, then coating it with a thin-film and, the final step, which involved removing sections of the coating periodically by laser ablation. Tin dioxide was chosen as the material for this study and it was sputtered using a pulsed DC sputtering system. Theoretical simulations were performed in order to select the appropriate parameters for the experiments. The responses of two different devices to different external refractive indices was studied, and the maximum sensitivity obtained was 6430 nm/RIU for external refractive indices ranging from 1.37 to 1.39.

Sputtering and ion plating

NASA Technical Reports Server (NTRS)

1972-01-01

The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

NASA Astrophysics Data System (ADS)

Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

2014-08-01

Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Localized Surface Plasmon Resonance in Au Nanoparticles Embedded dc Sputtered ZnO Thin Films.

PubMed

Patra, Anuradha; Balasubrahmaniyam, M; Lahal, Ranjit; Malar, P; Osipowicz, T; Manivannan, A; Kasiviswanathan, S

2015-02-01

The plasmonic behavior of metallic nanoparticles is explicitly dependent on their shape, size and the surrounding dielectric space. This study encompasses the influence of ZnO matrix, morphology of Au nanoparticles (AuNPs) and their organization on the optical behavior of ZnO/AuNPs-ZnO/ZnO/GP structures (GP: glass plate). These structures have been grown by a multiple-step physical process, which includes dc sputtering, thermal evaporation and thermal annealing. Different analytical techniques such as scanning electron microscopy, glancing angle X-ray diffraction, Rutherford backscattering spectrometry and optical absorption have been used to study the structures. In-situ rapid thermal treatment during dc sputtering of ZnO film has been found to induce subtle changes in the morphology of AuNPs, thereby altering the profile of the plasmon band in the absorption spectra. The results have been contrasted with a recent study on the spectral response of dc magnetron sputtered ZnO films embedded with AuNPs. Initial simulation results indicate that AuNPs-ZnO/Au/GP structure reflects/absorbs UV and infrared radiations, and therefore can serve as window coatings.

Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

2017-06-01

A 10-nm-thick radio frequency magnetron-sputtered aluminum-doped zinc oxide (AZO) showing a texture with a preferential (0001) orientation on amorphous glass substrates was used as an interface layer for tailoring the orientation of 490-nm-thick polycrystalline AZO films subsequently deposited by direct current (DC) magnetron sputtering at a substrate temperature of 200 °C. Wide-angle X-ray diffraction pole figure analysis showed that the resulting 500-nm-thick AZO films showed a texture with a highly preferential c-axis orientation. This showed that DC-magnetron-sputtered AZO films grew along with the orientation matching that of the interface layer, whereas 500-nm-thick AZO films deposited on bare glass substrates by DC magnetron sputtering exhibited a mixed orientation of the c-plane and other planes. The surface morphology was also improved while retaining the lateral grain size by applying the interface layer as revealed by atomic force microscopy.

Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Tae Kyoung; Yoon, Yeo Jin; Oh, Seung Kyu; Lee, Yu Lim; Cha, Yu-Jung; Kwak, Joon Seop

2018-02-01

The dependence of the electrical and optical properties of radio frequency (RF) superimposed direct current (DC) sputtered-indium tin oxide (ITO) on the tin oxide (Sn2O3) content of the ITO is investigated, in order to elucidate an ohmic contact mechanism for the sputtered-ITO transparent electrodes on p-type gallium nitride (p-GaN). Contact resistivity of the RF superimposed DC sputtered-ITO on p-GaN in LEDs decreased when Sn2O3 content was increased from 3 wt% to 7 wt% because of the reduced sheet resistance of the sputtered-ITO with the increasing Sn2O3 content. Further increases in Sn2O3 content from 7 wt% to 15 wt% resulted in deterioration of the contact resistivity, which can be attributed to reduction of the work function of the ITO with increasing Sn2O3 content, followed by increasing Schottky barrier height at the sputtered ITO/p-GaN interface. Temperature-dependent contact resistivity of the sputtered-ITO on p-GaN also revealed that the ITO contacts with 7 wt% Sn2O3 yielded the lowest effective barrier height of 0.039 eV. Based on these results, we devised sputtered-ITO transparent p-electrodes having dual compositions of Sn2O3 content (7/10 wt%). The radiant intensity of LEDs having sputtered-ITO transparent p-electrodes with the dual compositions (7/10 wt%) was enhanced by 13% compared to LEDs having ITO with Sn2O3 content of 7 wt% only.

Ion density evolution in a high-power sputtering discharge with bipolar pulsing

NASA Astrophysics Data System (ADS)

Britun, N.; Michiels, M.; Godfroid, T.; Snyders, R.

2018-06-01

Time evolution of sputtered metal ions in high power impulse magnetron sputtering (HiPIMS) discharge with a positive voltage pulse applied after a negative one (regime called "bipolar pulse HiPIMS"—BPH) is studied using 2-D density mapping. It is demonstrated that the ion propagation dynamics is mainly affected by the amplitude and duration of the positive pulse. Such effects as ion repulsion from the cathode and the ionization zone shrinkage due to electron drift towards the cathode are clearly observed during the positive pulse. The BPH mode also alters the film crystallographic structure, as observed from X-ray diffraction analysis.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Sputtering. [as deposition technique in mechanical engineering

NASA Technical Reports Server (NTRS)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

The target material influence on the current pulse during high power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Moens, Filip; Konstantinidis, Stéphanos; Depla, Diederik

2017-10-01

The current-time characteristic during high power pulsed magnetron sputtering is measured under identical conditions for seventeen different target materials. Based on physical processes such as gas rarefaction, ion-induced electron emission, and electron impact ionization, two test parameters were derived that significantly correlate with specific features of the current-time characteristic: i) the peak current is correlated to the momentum transfer between the sputtered material and the argon gas, ii) while the observed current plateau after the peak is connected to the metal ionization rate.

Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

NASA Astrophysics Data System (ADS)

Greczynski, Grzegorz

2016-09-01

High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic heavy-metal ions to densify the dilute TiTaN and/or TiAlTaN alloys. No external heating is used and the substrate temperature does not exceed 120 °C. This development allows for widening the application range of hard TM nitride coatings to new classes of technologically-relevant temperature-sensitive substrates, such as components made by plastics, glasses, aluminum alloys, and tempered steels. Author wants to acknowledge the financial support from VINN Excellence Center Functional Nanoscale Materials (FunMat) Grant 2005 02666.

Foundations of DC plasma sources

NASA Astrophysics Data System (ADS)

Tomas Gudmundsson, Jon; Hecimovic, Ante

2017-12-01

A typical dc discharge is configured with the negative cathode at one end and a positive anode at the other end, separated by a gas filled gap, placed inside a long glass cylinder. A few hundred volts between the cathode and anode is required to maintain the discharge. The type of discharge that is formed between the two electrodes depends upon the pressure of the working gas, the nature of the working gas, the applied voltage and the geometry of the discharge. We discuss the current-voltage characteristics of the discharge as well as the distinct structure that develops in the glow discharge region. The dc glow discharge appears in the discharge current range from μA to mA at 0.5-300 Pa pressure. We discuss the various phenomena observed in the dc glow discharge, including the cathode region, the positive column, and striations. The dc glow discharge is maintained by the emission of secondary electrons from the cathode target due to the bombardment of ions. For decades, the dc glow discharge has been used as a sputter source. Then it is often operated as an obstructed abnormal glow discharge and the required applied voltage is in the range 2-5 kV. Typically, the cathode target (the material to be deposited) is connected to a negative voltage supply (dc or rf) and the substrate holder faces the target. The relatively high operating pressure, in the range from 2 to 4 Pa, high applied voltages, and the necessity to have a conductive target limit the application of dc glow discharge as a sputter source. In order to lower the discharge voltage and expand the operation pressure range, the lifetime of the electrons in target vicinity is increased through applying magnetic field, by adding permanent magnets behind the cathode target. This arrangement is coined the magnetron sputtering discharge. The various configurations of the magnetron sputtering discharge and its applications are described. Furthermore, the use of dc discharges for chemical analysis, the Penning discharge and the hollow cathode discharges and some of its applications are briefly discussed.

Temperature characteristics of SAW resonators on Sc0.26Al0.74N/polycrystalline diamond heterostructures

NASA Astrophysics Data System (ADS)

Sinusía Lozano, M.; Chen, Z.; Williams, Oliver A.; Iriarte, G. F.

2018-07-01

Surface acoustic wave (SAW) resonators have been fabricated on a 2 μm scandium aluminium nitride (ScAlN) film deposited by means of pulsed-DC reactive magnetron sputtering on a 5.8 μm polycrystalline diamond substrate. Thin film characterization comprised of the assessment of the thin film texture by means of x-ray diffraction (XRD) measurements, reporting highly c-axis oriented ScAlN thin films with a full width at half maximum (FWHM) of the ω-θ scans below 2°. Compositional and piezoelectric analyses of the thin films synthesized with the sputtering parameters used in this work, namely a sputtering power of 700 W and a synthesis pressure of 0.53 Pa, have reported a thin film composition of Sc0.26Al0.74N together with a piezoelectric d33 constant of ‑11 pC/N. Finally, a SAW resonator has been characterized using a vector network analyser (VNA) under various substrate temperature conditions with two iterations. The resulting temperature coefficient of frequency (TCF) values show a highly linear behaviour within two temperature ranges, namely from 20 K to room temperature (300 K) (‑12.5 ppm/K) as well as from 300 K up to 450 K (‑34.6 ppm/K).

Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin

2014-12-28

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s}more » of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)« less

Characterization of high power impulse magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Hala, Matej

Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and ionized oxygen, since the monitored discharge is operated above a fully poisoned (oxidized) target from which only a minimum of Cr is sputtered. No signs of self-sputtering have been detected, in contrast to the discharges in Ar, N2 and N2/Ar mixtures previously investigated. Paper IV: In the fourth paper, we study different power management approaches in HiPIMS and MPPMS and their effects on the pulsed discharge evolution, plasma composition, and metal ionization estimated by OES. It is shown that HiPIMS is the only technique that enables the discharge operation in self-sputtering mode within the investigated range of applied powers, resulting in a significantly higher ionization of the sputtered metal than that reached with MPPMS. In contrast to HiPIMS, MPPMS provides a higher versatility in adjusting the pulse shape and pulse length. This feature can be particularly beneficial, for instance, in the discharge ignition. Nb coatings prepared by HiPIMS and MPPMS have very similar deposition rates that are lower than in DCMS. All films prepared at p = 1Pa possess a dense columnar structure. Coatings deposited by the two high power pulsed discharges exhibit higher compressive stress and larger out-of-plane lattice spacing than those prepared by DC sputtering under comparable conditions. At higher pressure, p = 2Pa, DCMS-grown films show a tensile stress due to a porous microstructure, while films prepared by HiPIMS and MPPMS are dense and in compression, most probably due to the substantial ion bombardment. Paper V: In the last paper, we analyze the behavior of the HiPIMS, MPPMS and DCMS discharges in reactive O2/Ar gas mixtures and evaluate the characteristics of the fabricated NbOx films. We demonstrate that the surface metal oxides can be effectively sputter-eroded from the target during both HiPIMS and MPPMS pulses, and that sputtering from a partially oxide-free target is possible even at high oxygen concentrations. This results in a hysteresisfree deposition process which allows one to prepare optically transparent b2O5 coatings at a high growth rate without the need of feedback control commonly used in reactive DCMS. Nb2O 5 coatings prepared by both reactive high power pulsed discharges exhibited a high index of refraction, a low extinction coefficient, a near-zero internal stress, and high hardness and Young's modulus. The HiPIMS-deposited coatings showed the highest deposition rate and the highest index of refraction. The latter observation was related to the higher film density. In comparison, MPPMS exhibited the highest power-normalized deposition rate among the three investigated deposition techniques, possibly due to the longer period that is available for the gradual target cleaning. (Abstract shortened by UMI.).

Very low pressure high power impulse triggered magnetron sputtering

DOEpatents

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

NASA Astrophysics Data System (ADS)

Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

2013-05-01

Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

Thickness and surface roughness study of co-sputtered nanostructured alumina/tungsten (Al2O3/W) thin films

NASA Astrophysics Data System (ADS)

Naveen, A.; Krishnamurthy, L.; Shridhar, T. N.

2018-04-01

Tungsten (W) and Alumina (Al2O3) thin films have been developed using co-sputtering technique on SS304, Copper (Cu) and Glass slides using Direct Current magnetron sputtering (DC) and Radio Frequency (RF) magnetron sputtering methods respectively. Central Composite Design (CCD) method approach has been adopted to determine the number of experimental plans for deposition and DC power, RF power and Argon gas flow rate have been input parameters, each at 5 levels for development of thin films. In this research paper, study has been carried out determine the optimized condition of deposition parameters for thickness and surface roughness of the thin films. Thickness and average Surface roughness in terms of nanometer (nm) have been characterized by thickness profilometer and atomic force microscopy respectively. The maximum and minimum average thickness observed to be 445 nm and 130 respectively. The optimum deposition condition for W/Al2O3 thin film growth was determined to be at 1000 watts of DC power and 800 watts of RF power, 20 minutes of deposition time, and almost 300 Standard Cubic Centimeter(SCCM) of Argon gas flow. It was observed that average roughness difference found to be less than one nanometer on SS substrate and one nanometer on copper approximately.

ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

ASDEX Upgrade Team Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources.Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna.Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.

ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.; ASDEX Upgrade Team

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources. Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna. Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Panda, Padmalochan; Ramaseshan, R.; Krishna, Nanda Gopala; Dash, S.

2016-05-01

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N2 concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (HIT) of around 28.2 GPa for a nitrogen concentration of 25%.

Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

DTIC Science & Technology

2010-03-01

protective layer was deposited on the top of YBCNO film by dc sputtering . A 200 nm 200 nm area film was selected and cut with a Ga ion beam (30 kV...200 TEM at 200 kV. Samples for TEM were prepared using a focused ion beam (FIB (Eindhoven, The Netherlands)) microscope. For TEM examination, a thin Pt...by dc magnetron sputtering deposition of Ag with 93 mm thickness. Transport current measurements were made in liquid nitrogen with the 4-probe method

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S.

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

HE,P.; HSEUH,H.C.; MAPES,M.

2001-06-18

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with {approximately}100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent resultsmore » were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented.« less

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav; University of South Bohemia, Institute of Physics and Biophysics, Branisovska 31, 370 05 Ceske Budejovice; Herrendorf, Ann-Pierra

2012-11-01

This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a highmore » concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.« less

Magnetostrictive Micro Mirrors for an Optical Switch Matrix

PubMed Central

Lee, Heung-Shik; Cho, Chongdu; Cho, Myeong-Woo

2007-01-01

We have developed a wireless-controlled compact optical switch by silicon micromachining techniques with DC magnetron sputtering. For the optical switching operation, micro mirror is designed as cantilever shape size of 5mm×800μm×50μm. TbDyFe film is sputter-deposited on the upper side of the mirror with the condition as: Ar gas pressure below 1.2×10-9 torr, DC input power of 180W and heating temperature of up to 250°C for the wireless control of each component. Mirrors are actuated by externally applied magnetic fields for the micro application. Applied beam path can be changed according to the direction and the magnitude of applied magnetic field. Reflectivity changes, M-H curves and X-ray diffractions of sputtered mirrors are measured to determine magneto-optical, magneto-elastic properties with variation in sputtered film thickness. The deflected angle-magnetic field characteristics of the fabricated mirror are measured. PMID:28903221

Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfiadi, H., E-mail: yudi@fi.itb.ac.id; Aji, A. S., E-mail: yudi@fi.itb.ac.id; Darma, Y., E-mail: yudi@fi.itb.ac.id

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX,more » XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie; Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17; Gahan, David, E-mail: david.gahan@impedans.com

A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this researchmore » work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.« less

Large area nano-patterning /writing on gold substrate using dip - pen nanolithography (DPN)

NASA Astrophysics Data System (ADS)

Saini, Sudhir Kumar; Vishwakarma, Amit; Agarwal, Pankaj B.; Pesala, Bala; Agarwal, Ajay

2014-10-01

Dip Pen Nanolithography (DPN) is utilized to pattern large area (50μmX50μm) gold substrate for application in fabricating Nano-gratings. For Nano-writing 16-MHA ink coated AFM tip was prepared using double dipping procedure. Gold substrate is fabricated on thermally grown SiO2 substrate by depositing ˜5 nm titanium layer followed by ˜30nm gold using DC pulse sputtering. The gratings were designed using period of 800nm and 25% duty cycle. Acquired AFM images indicate that as the AFM tip proceeds for nano-writing, line width decreases from 190nm to 100nm. This occurs probably due to depreciation of 16-MHA molecules in AFM tip as writing proceeds.

.beta.-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, Paul G.; Thompson, Jesse B.

1994-01-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Further insights into prepeak emission in pulsed radiofrequency glow discharge

NASA Astrophysics Data System (ADS)

Valledor, Rebeca; Vega, Paola; Pisonero, Jorge; Nelis, Thomas; Bordel, Nerea

2013-07-01

Side-on optical emission measurements, with spatial and temporal resolution, have been carried out on a modified Grimm type pulsed rf glow discharge, using a copper sample and argon as discharge gas. In particular, the early ignition phase of the pulsed discharge, prepeak, and the beginning of the plateau have been electrically characterized and spectroscopically evaluated along the plasma plume for several argon and copper emission lines. Different pulse repetition frequencies have been used while keeping a constant duty cycle of 25%, covering a range from the μs to the ms pulsed GD. In all the cases a spatially extended discharge has been observed during the first 10-20 μs of the pulse, when the dc bias voltage has not been fully established yet. During this early phase of the pulse, the species present in the chamber are excited following the amplitude of the voltage symmetrical oscillations, and argon and copper emission can be detected at all the distances evaluated along the plasma axis at delays as short as 4 μs. After the first 20 μs approximately, the discharge has contracted close to the sample surface, the dc bias voltage has been almost established and the sputtering process is taking place. Emission registered through side-on observation, at positions relatively far from the sample, decreases and then progressively increases to reach a plateau if the voltage pulse lasts long enough. Moreover, the further the detection position is from the sample surface, the later the increase of the copper and argon emission is observed. Therefore transport phenomena involving both argon and copper species are now evidently leading to an estimated average speed of 100 m/s. Additionally, end-on optical emission measurements have been carried out to evaluate the prepeak emission from the negative glow region close to the sample surface, and then to compare this emission with that occurring at farther positions (side-on detection experiments). The results have shown that the basis of both prepeaks might be different as the prepeak signal measured using end-on detection peaks around 10 μs later than that observed using side-on detection.

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

PubMed

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

2018-02-01

The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

NASA Astrophysics Data System (ADS)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

PubMed

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

NASA Astrophysics Data System (ADS)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

The current-density distribution in a pulsed dc magnetron deposition discharge

NASA Astrophysics Data System (ADS)

Vetushka, Alena; Bradley, James W.

2007-04-01

Using a carefully constructed magnetic probe (a B-dot probe) the spatial and temporal evolution of the perturbation in the magnetic field ΔB in an unbalanced pulsed dc magnetron has been determined. The plasma was run in argon at a pressure of 0.74 Pa and the plasma ions sputtered a pure graphite target. The pulse frequency and duty were set at 100 kHz and 55%, respectively. From the ΔB measurements (measured with magnitudes up to about 0.01 mT) the axial, azimuthal and radial components of the total current density j in the plasma bulk were determined. In the plasma 'on' phase, the axial current density jz has a maximum value of approximately 200 A m-2 above the racetrack region, while high values in the azimuthal current density jΦ are distributed in a region from 1 to 3 cm into the bulk plasma with jΦ exceeding 350 A m-2. In the 'off' phase of the plasma, jz decays almost instantaneously (at least within the 100 ns time-resolution of the ΔB measurements) as the electric field collapses; however, jΦ decays with a characteristic time constant of about 1 µs. This slow decay can be attributed to the presence of decaying Grad-B and curvature drifts, with their rates controlled by the decay in the plasma density. A comparison between axial and azimuthal current densities in the plasma 'on' time, when the plasma is being driven, strongly indicates that classical transport does not operate in the magnetron discharge.

Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, S.; Greczynski, G.; Jensen, J.

2012-07-01

Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies.more » Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.« less

Structural and optical properties of DC magnetron sputtered ZnO films on glass substrate and their modification by Ag ions implantation

NASA Astrophysics Data System (ADS)

Ahmad, R.; Afzal, Naveed; Amjad, U.; Jabbar, S.; Hussain, T.; Hussnain, A.

2017-07-01

This work is focused on investigating the effects of deposition time and Ag ions implantation on structural and optical properties of ZnO film. The ZnO film was prepared on glass substrate by pulsed DC magnetron sputtering of pure Zn target in reactive oxygen environment for 2 h, 3 h, 4 h and 5 h respectively. X-ray diffraction results revealed polycrystalline ZnO film whose crystallinity was improved with increase of the deposition time. The morphological features indicated agglomeration of smaller grains into larger ones by increasing the deposition time. The UV-vis spectroscopy analysis depicted a small decrease in the band gap of ZnO from 3.36 eV to 3.27 eV with increase of deposition time. The Ag ions implantation in ZnO films deposited for 5 h on glass was carried out by using Pelletron Accelerator at different ions fluences ranging from 1  ×  1011 ions cm-2 to 2  ×  1012 ions cm-2. XRD patterns of Ag ions implanted ZnO did not show significant change in crystallite size by increasing ions fluence from 1  ×  1011 ions cm-2 to 5  ×  1011 ions cm-2. However, with further increase of the ions fluence, the crystallite size was decreased. The band gap of Ag ions implanted ZnO indicated anomalous variations with increase of the ions fluence.

Pulsed-DC DBD Plasma Actuators

NASA Astrophysics Data System (ADS)

Duong, Alan; Corke, Thomas; Thomas, Flint

2017-11-01

A power system for dielectric barrier discharge (DBD) plasma actuators that utilizes a pulsed-DC waveform is presented. The plasma actuator arrangement is identical to most typical AC-DBD designs with staggered electrodes that are separated by a dielectric insulator. A key difference is that the pulsed-DC actuator utilizes a DC voltage source to drive the actuator instead of an AC voltage input. The DC source is supplied to both electrodes. The exposed electrode remains constant in time while the encapsulated electrode is periodically grounded for short instances then is allowed to rise to the source DC level. Further investigation of the pulsed-DC plasma actuator was conducted. Time-resolved velocity measurements were done to characterize the induced velocity field generated by the pulsed-DC plasma actuator. A model of the pulsed-DC plasma actuator is developed in LTspice for further study. The work presented are intended in developing a model to be used in CFD flow control simulations. NASA SBIR NNX14CC12C.

On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

NASA Astrophysics Data System (ADS)

Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

2014-04-01

The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps: process gas sputtering, gas-sustained SS, self-sustained SS and SS runaway. At the highest voltage, 1000 V, the discharge is very close to, but does not go into, the SS runaway mode. This absence of runaway is proposed to be connected to an unexpected finding: that twice ionized ions of the target species play almost no role in this discharge, not even at the highest powers. This reduces ionization by secondary-emitted energetic electrons almost to zero in the highest power range of the discharge.

Control of DC gas flow in a single-stage double-inlet pulse tube cooler

NASA Astrophysics Data System (ADS)

Wang, C.; Thummes, G.; Heiden, C.

The use of double-inlet mode in the pulse tube cooler opens up a possibility of DC gas flow circulating around the regenerator and pulse tube. Numerical analysis shows that effects of DC flow in a single-stage pulse tube cooler are different in some aspects from that in a 4 K pulse tube cooler. For highest cooler efficiency, DC flow should be compensated to a small value, i.e. DC flow over average AC flow at regenerator inlet should be in the range -0.0013 to +0.00016. Dual valves with reversed asymmetric geometries were used for the double-inlet bypass to control the DC flow in this paper. The experiment, performed in a single-stage double-inlet pulse tube cooler, verified that the cooler performance can be significantly improved by precisely controlling the DC flow.

Characterization of polycrystalline nickel cobaltite nanostructures prepared by DC plasma magnetron co-sputtering for gas sensing applications

NASA Astrophysics Data System (ADS)

Hammadi, Oday A.; Naji, Noor E.

2018-03-01

In this work, a gas sensor is fabricated from polycrystalline nickel cobaltite nano films deposited on transparent substrates by closed-field unbalanced dual-magnetrons (CFUBDM) co-sputtering technique. Two targets of nickel and cobalt are mounted on the cathode of discharge system and co-sputtered by direct current (DC) argon discharge plasma in presence of oxygen as a reactive gas. The total gas pressure is 0.5 mbar and the mixing ratio of Ar:O2 gases is 5:1. The characterization measurements performed on the prepared films show that their transmittance increases with the incident wavelength, the polycrystalline structure includes 5 crystallographic planes, the average particle size is about 35 nm, the electrical conductivity is linearly increasing with increasing temperature, and the activation energy is about 0.41 eV. These films show high sensitivity to ethanol vapor.

[beta]-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, P.G.; Thompson, J.B.

1994-11-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

PubMed

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kossoy, Anna, E-mail: annaeden@hi.is, E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.

2015-03-15

The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute itmore » to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.« less

Der p 1-pulsed myeloid and plasmacytoid dendritic cells from house dust mite-sensitized allergic patients dysregulate the T cell response.

PubMed

Charbonnier, Anne-Sophie; Hammad, Hamida; Gosset, Philippe; Stewart, Geoffrey A; Alkan, Sefik; Tonnel, André-Bernard; Pestel, Joël

2003-01-01

Although reports suggest that dendritic cells (DC) are involved in the allergic reaction characterized by a T helper cell type 2 (Th2) profile, the role of myeloid (M-DC) and plasmacytoid DC (P-DC), controlling the balance Th1/Th2, remains unknown. Here, we showed that in Dermatophagoides pteronyssinus (Dpt)-sensitized allergic patients and in healthy donors, M-DC displayed a higher capacity to capture Der p 1, a major allergen of Dpt, than did P-DC. However, Der p 1-pulsed M-DC from healthy subjects overexpressed CD80 and secreted interleukin (IL)-10, whereas M-DC from allergic patients did not. In contrast, with Der p 1-pulsed P-DC from both groups, no increase in human leukocyte antigen-DR, CD80, and CD86 and no IL-10 secretion were detected. When cocultured with allogeneic naive CD4(+) T cells from healthy donors, Der p 1-pulsed M-DC from allergic patients favored a Th1 profile [interferon (IFN)-gamma(high)/IL-4(low)] and Der p 1-pulsed P-DC, a Th2 profile (IFN-gamma(low)/IL-4(high)). In healthy donors, no T cell polarization (IFN-gamma(low)/IL-4(low)) was induced by Der p 1-pulsed M-DC or P-DC, but in response to Der p 1-pulsed M-DC, T cells secreted IL-10. The neutralization of IL-10 produced by Der p 1-pulsed M-DC from healthy donors led to an inhibition of IL-10 production by T cells and a polarization toward a type 1. Thus, IL-10 produced by M-DC might be an essential mediator controlling the balance between tolerance and allergic status. In addition, P-DC could contribute to the steady state in healthy donors or to the development of a Th2 response in allergic donors.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1984-01-01

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Pulsed DC Electric Field–Induced Differentiation of Cortical Neural Precursor Cells

PubMed Central

Chang, Hui-Fang; Lee, Ying-Shan; Tang, Tang K.; Cheng, Ji-Yen

2016-01-01

We report the differentiation of neural stem and progenitor cells solely induced by direct current (DC) pulses stimulation. Neural stem and progenitor cells in the adult mammalian brain are promising candidates for the development of therapeutic neuroregeneration strategies. The differentiation of neural stem and progenitor cells depends on various in vivo environmental factors, such as nerve growth factor and endogenous EF. In this study, we demonstrated that the morphologic and phenotypic changes of mouse neural stem and progenitor cells (mNPCs) could be induced solely by exposure to square-wave DC pulses (magnitude 300 mV/mm at frequency of 100-Hz). The DC pulse stimulation was conducted for 48 h, and the morphologic changes of mNPCs were monitored continuously. The length of primary processes and the amount of branching significantly increased after stimulation by DC pulses for 48 h. After DC pulse treatment, the mNPCs differentiated into neurons, astrocytes, and oligodendrocytes simultaneously in stem cell maintenance medium. Our results suggest that simple DC pulse treatment could control the fate of NPCs. With further studies, DC pulses may be applied to manipulate NPC differentiation and may be used for the development of therapeutic strategies that employ NPCs to treat nervous system disorders. PMID:27352251

Anomalous effects in the aluminum oxide sputtering yield

NASA Astrophysics Data System (ADS)

Schelfhout, R.; Strijckmans, K.; Depla, D.

2018-04-01

The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a new and fast method. The method is based on the meticulous determination of the reactive gas consumption during reactive DC magnetron sputtering and has been deployed to determine the sputtering yield of aluminum oxide. The accuracy of the proposed method is demonstrated by comparing its results to the common weight loss method excluding secondary effects such as redeposition. Both methods exhibit a decrease in sputtering yield with increasing discharge current. This feature of the aluminum oxide sputtering yield is described for the first time. It resembles the discrepancy between published high sputtering yield values determined by low current ion beams and the low deposition rate in the poisoned mode during reactive magnetron sputtering. Moreover, the usefulness of the new method arises from its time-resolved capabilities. The evolution of the alumina sputtering yield can now be measured up to a resolution of seconds. This reveals the complex dynamical behavior of the sputtering yield. A plausible explanation of the observed anomalies seems to originate from the balance between retention and out-diffusion of implanted gas atoms, while other possible causes are commented.

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

NASA Technical Reports Server (NTRS)

Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

1988-01-01

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si withoutmore » HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.« less

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jhanwar, Prachi, E-mail: prachijhanwar87@gmail.com; Department of Electronics, Banasthali University-304022, Rajasthan; Kumar, Arvind

2016-04-13

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) asmore » compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).« less

[INVITED] Nanofabrication of phase-shifted Bragg gratings on the end facet of multimode fiber towards development of optical filters and sensors

NASA Astrophysics Data System (ADS)

Gallego, E. E.; Ascorbe, J.; Del Villar, I.; Corres, J. M.; Matias, I. R.

2018-05-01

This work describes the process of nanofabrication of phase-shifted Bragg gratings on the end facet of a multimode optical fiber with a pulsed DC sputtering system based on a single target. Several structures have been explored as a function of parameters such as the number of layers or the phase-shift. The experimental results, corroborated with simulations based on plane-wave propagation in a stack of homogeneous layers, indicate that the phase-shift can be controlled with a high degree of accuracy. The device could be used both in communications, as a filter, or in the sensors domain. As an example of application, a humidity sensor with wavelength shifts of 12 nm in the range of 30 to 90% relative humidity (200 pm/% relative humidity) is presented.

Ferroelectric and paraelectric Ba0.5Sr0.5TiO3 film structure distortions at room temperature and their effects on tunable microwave properties

NASA Astrophysics Data System (ADS)

Alldredge, L. M. B.; Chang, Wontae; Qadri, Syed B.; Kirchoefer, Steven W.; Pond, Jeffrey M.

2007-05-01

Sputter-deposited Ba0.5Sr0.5TiO3 films on (001) MgO were characterized for their dielectric properties with different lattice structures. With varying Ar :O2 ratios during deposition, the films showed either in-plane (ca) tetragonal distortions, significantly affecting the dielectric constant and tunability. The dielectric constant exhibited clear hysteresis with dc bias at room temperature, indicating that the films were ferroelectric. The relationship between the dielectric properties and the distortions was the reverse of that observed in films deposited by pulsed laser deposition. The anisotropic in-plane dielectric behavior can be understood by relating polarization to film distortions and to the presence of permanent dipoles.

Corrosion studies of DC reactive magnetron sputtered alumina coating on 304 SS

NASA Astrophysics Data System (ADS)

Thangaraj, Baskar; Mahadevan, Krishnan

2017-12-01

Aluminum oxide films on SS 304 deposited by DC reactive magnetron sputtering technique were studied with respect to the composition of the sputter gas (Ar:O2), gas pressure, substrate temperature, current etc. to achieve good insulating films with high corrosion resistance. The films were characterized by XRD and SEM techniques. Potentiodynamic polarization and electrochemical impedance spectroscopy measurements were made under static conditions in order to evaluate the corrosion performance of the alumina-coated SS 304 for various immersion durations in 0.5 M and 1 M NaCl solution. Alumina-coated SS 304 has low corrosion value of 0.4550 and 1.1090MPY for 24 h immersion time in both solutions. The impedance plots for the alumina coated SS 304 in 1 M NaCl solution at different durations are slightly different to when compared to its immersion in 0.5 M NaCl solutions and are composed of two depressed semi circles. For the alumina coated film, the impedance spectrum decreased, when immersion time increased.

Validity of "sputtering and re-condensation" model in active screen cage plasma nitriding process

NASA Astrophysics Data System (ADS)

Saeed, A.; Khan, A. W.; Jan, F.; Abrar, M.; Khalid, M.; Zakaullah, M.

2013-05-01

The validity of "sputtering and re-condensation" model in active screen plasma nitriding for nitrogen mass transfer mechanism is investigated. The dominant species including NH, Fe-I, N2+, N-I and N2 along with Hα and Hβ lines are observed in the optical emission spectroscopy (OES) analysis. Active screen cage and dc plasma nitriding of AISI 316 stainless steel as function of treatment time is also investigated. The structure and phases composition of the nitrided layer is studied by X-ray diffraction (XRD). Surface morphology is studied by scanning electron microscopy (SEM) and hardness profile is obtained by Vicker's microhardness tester. Increasing trend in microhardness is observed in both cases but the increase in active screen plasma nitriding is about 3 times greater than that achieved by dc plasma nitriding. On the basis of metallurgical and OES observations the use of "sputtering and re-condensation" model in active screen plasma nitriding is tested.

Analysis of DC control in double-inlet GM type pulse tube refrigerators for detectors

NASA Astrophysics Data System (ADS)

Du, B. Y.

2016-10-01

Pulse tube refrigerators have demonstrated many advantages with respect to temperature stability, vibration, reliability and lifetime among cryo-coolers for detectors. Double-inlet type pulse tube refrigerators are popular in GM type pulse tube refrigerators. The single double-inlet valve may introduce DC flow in refrigerator, which deteriorates the performance of pulse tube refrigerator. One new type of DC control mode is introduced in this paper. Two parallel-placed needle valves with opposite direction named double-valve configuration, instead of single double-inlet valve, are used in our experiment to reduce the DC flow. With two double-inlet operating, the lowest cold end temperature of 18.1K and a coolant of 1.2W@20K have been obtained. It has proved that this method is useful for controlling DC flow of the pulse tube refrigerators, which is very important to understand the characters of pulse tube refrigerators for detectors.

Hydrogenation behavior of Ti-implanted Zr-1Nb alloy with TiN films deposited using filtered vacuum arc and magnetron sputtering

NASA Astrophysics Data System (ADS)

Kashkarov, E. B.; Nikitenkov, N. N.; Sutygina, A. N.; Bezmaternykh, A. O.; Kudiiarov, V. N.; Syrtanov, M. S.; Pryamushko, T. S.

2018-02-01

More than 60 years of operation of water-cooled reactors have shown that local or general critical hydrogen concentration is one of the basic limiting criteria of zirconium-based fuel element claddings. During the coolant radiolysis, released hydrogen penetrates and accumulates in zirconium alloys. Hydrogenation of zirconium alloys leads to degradation of their mechanical properties, hydride cracking and stress corrosion cracking. In this research the effect of titanium nitride (TiN) deposition on hydrogenation behavior of Ti-implanted Zr-1Nb alloy was described. Ti-implanted interlayer was fabricated by plasma immersion ion implantation (PIII) at the pulsed bias voltage of 1500 V to improve the adhesion of TiN and reduce hydrogen penetration into Zr-1Nb alloy. We conducted the comparative analysis on hydrogenation behavior of the Ti-implanted alloy with sputtered and evaporated TiN films by reactive dc magnetron sputtering (dcMS) and filtered cathodic vacuum arc deposition (FVAD), respectively. The crystalline structure and surface morphology were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The elemental distribution was analyzed using glow-discharge optical emission spectroscopy (GD-OES). Hydrogenation was performed from gas atmosphere at 350 °C and 2 atm hydrogen pressure. The results revealed that TiN films as well as Ti implantation significantly reduce hydrogen absorption rate of Zr-1Nb alloy. The best performance to reduce the rate of hydrogen absorption is Ti-implanted layer with evaporated TiN film. Morphology of the films impacted hydrogen permeation through TiN films: the denser film the lower hydrogen permeation. The Ti-implanted interface plays an important role of hydrogen accumulation layer for trapping the penetrated hydrogen. No deterioration of adhesive properties of TiN films on Zr-1Nb alloy with Ti-implanted interface occurs under high-temperature hydrogen exposure. Thus, the fabrication of Ti-implanted layer with dense TiN films can be an effective way to protect Zr-1Nb alloy from hydrogen embrittlement.

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

PubMed Central

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu‐Jung; Oh, Seung Kyu; You, Shin‐Jae; Ryou, Jae‐Hyun

2017-01-01

Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p‐GaN surface can reduce plasma‐induced damage to the p‐GaN. Furthermore, electron‐beam irradiation on p‐GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma‐induced damage to the p‐GaN. The plasma electrons can increase the effective barrier height at the ITO/deep‐level defect (DLD) band of p‐GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage‐free sputtered‐ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e‐beam‐evaporated ITO TCE. PMID:29619312

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate.

PubMed

Reynolds, Glyn J; Kratzer, Martin; Dubs, Martin; Felzer, Heinz; Mamazza, Robert

2012-04-13

Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8-210 μA/cm²) and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm -2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8-15 μC/cm². When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10 -2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10 -3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

PubMed Central

Reynolds, Glyn J.; Kratzer, Martin; Dubs, Martin; Felzer, Heinz; Mamazza, Robert

2012-01-01

Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2) and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities. PMID:28817001

[Preparation of electrodeposited Cr-La coating and its spectral properties].

PubMed

Liu, Xiao-zhen; Wang, Gang; Song, Ling-ling; Li, Xin; Zhu, Xu-qiang

2011-07-01

Cr-La coating (dc) and Cr-La coating (pulse) were prepared by electrodeposition method of direct current and pulsating current respectively. The Cr-La coating (dc) and Cr-La coating (pulse) were characterized with ICP-AES, EDAX, XRD and SEM techniques, respectively. Cr-La coating(dc) was amorphous. There were crystalline La and CrC in Cr-La coating (pulse). The microhardness of the Cr-La coating(dc) and Cr-La coating (pulse) were as high as 860.3 and 930.2 HV respectively, which were higher 11.15% and 20.18% higher than that of the Cr coating (774.0 HV). The wear weight losses of Cr-La coating(dc) and Cr-La coating(pulse) were 1.29 and 2.25 times lower than that of Cr coating, respectively. The friction coefficient of Cr coating, Cr-La coating(dc) and Cr-La coating(pulse) were 0. 884, 0. 640 and 0. 648 respectively. The properties of wear weight loss and microhardness of coatings were improved with pulsating current. The wear weight loss and microhardness of Cr-La coating(pulse) were lower 1.75 time lower and higher 8.13% higher than that of the Cr-La coating(dc), respectively.

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate material can have a significant effect on adhesion and the mechanical response between the coating and substrate. Depending on deposition parameters and the selected material MPPMS and DOMS are promising alternatives to DCMS, PMS, and CAD.

Optimization of spin-torque switching using AC and DC pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunn, Tom; Kamenev, Alex; Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455

2014-06-21

We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

Supported plasma sputtering apparatus for high deposition rate over large area

DOEpatents

Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

1977-01-01

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

Correlation between Optical Properties and Chemical Composition of Sputter-Deposited Germanium Oxide (GEOX) Films (Postprint)

DTIC Science & Technology

2014-03-18

the GeOx films. The measured index of refraction ( n ) at a wavelength (k) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior...in n (k = 550 nm) to 2.62 and occurs at Γ = 0.25. Finally n drops to 1.60 for U = 0.50–1.00, where the films become GeO2. A detailed correlation...between Γ n , k and stoichiometry in DC sputtered GeOx films is presented and discussed. 15. SUBJECT TERMS ellipsometry, reactive sputtering, x-ray

Multilevel metallization method for fabricating a metal oxide semiconductor device

NASA Technical Reports Server (NTRS)

Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

1978-01-01

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1982-01-01

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

PubMed

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

Time-resolved temperature study in a high-power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britun, Nikolay; Palmucci, Maria; Konstantinidis, Stephanos

2013-07-07

The gas heating dynamics is studied in a high-power impulse magnetron sputtering discharge operating in Ar-N{sub 2} gas mixtures. The time-resolved rotational temperature analysis based on the spectral transition between the B{sup 2}{Sigma}{sub u}{sup +}-X{sup 2}{Sigma}{sub g}{sup +} energy levels in molecular nitrogen ion (N{sub 2}{sup +} First Negative Band) is undertaken for this purpose. The rotational temperature in the discharge is found to increase linearly during the plasma pulse being roughly independent on the nitrogen content in the examined range. Such a temperature increase is attributed to the bulk gas heating which is the result of collisions with themore » sputtered species. Two sputtered materials, Ti and W, are examined during the study. In the case of W sputtering, the gas heating is found to be more pronounced than in the Ti case, which is explained by more efficient energy exchange between the sputtered W atoms and the bulk gas atoms during the plasma on-time. The obtained temperature data are compared to the laser-induced fluorescence study of Ar metastable atoms performed recently in the same discharge in our group. The particularities related to gas thermalization as well as to validity of the utilized approach for characterization of the pulsed sputtering discharges are discussed.« less

DC magnetron sputtered polyaniline-HCl thin films for chemical sensing applications.

PubMed

Menegazzo, Nicola; Boyne, Devon; Bui, Holt; Beebe, Thomas P; Booksh, Karl S

2012-07-03

Thin films of conducting polymers exhibit unique chemical and physical properties that render them integral parts in microelectronics, energy storage devices, and chemical sensors. Overall, polyaniline (PAni) doped in acidic media has shown metal-like electronic conductivity, though exact physical and chemical properties are dependent on the polymer structure and dopant type. Difficulties arising from poor processability render production of doped PAni thin films particularly challenging. In this contribution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparation of conductive thin films of PAni doped with hydrochloric acid (PAni-HCl) in an effort to circumvent issues associated with conventional thin film preparation methods. Samples manufactured by the sputtering method are analyzed along with samples prepared by conventional drop-casting. Physical characterization (atomic force microscopy, AFM) confirm the presence of PAni-HCl and show that films exhibit a reduced roughness and potentially pinhole-free coverage of the substrate. Spectroscopic evidence (UV-vis, FT-IR, and X-ray photoelectron spectroscopy (XPS)) suggests that structural changes and loss of conductivity, not uncommon during PAni processing, does occur during the preparation process. Finally, the applicability of sputtered films to gas-phase sensing of NH(3) was investigated with surface plasmon resonance (SPR) spectroscopy and compared to previous contributions. In summary, sputtered PAni-HCl films exhibit quantifiable, reversible behavior upon exposure to NH(3) with a calculated LOD (by method) approaching 0.4 ppm NH(3) in dry air.

Behavior of Osteoblast-Like Cells on a β-Tricalcium Phosphate Synthetic Scaffold Coated With Calcium Phosphate and Magnesium.

PubMed

Park, Ki-Deog; Jung, Young-Suk; Lee, Kyung-Ku; Park, Hong-Ju

2016-06-01

Tricalcium phosphate (TCP) is one of the most useful synthetic scaffolds for bone grafts and has several advantages. However, the rapid degradation of TCP makes it less osteoconductive than the other candidates, and represents a major shortcoming. To overcome this problem, the authors investigated magnesium (Mg) and/or hydroxyapatite (HA) coating on a β-TCP substrate using a sputtering technique. Biocompatibility tests were carried out on β-TCP discs that were either uncoated (TCP), coated with HA by radio frequency magnetron sputtering (HA-TCP), coated with Mg by DC sputtering (Mg-TCP), or multicoated with Mg and HA by DC and radio frequency magnetron sputtering (MgHA-TCP). Cells showed similar morphology in all 4 groups, and were widely spread, had flattened elongated shapes, and were connected to adjacent cells by pseudopods. An MTT assay revealed higher cell proliferation on HA-TCP, Mg-TCP, and MgHA-TCP compared with TCP at 3 and 5 days. MgHA-TCP also showed significantly higher alkaline phosphatase activity levels compared with TCP, HA-TCP, and Mg-TCP (P < 0.05). Results suggest that Mg-coated β-TCP could have great potential as a bone graft material for future applications in hard tissue regeneration.

Pulsed helium ionization detection system

DOEpatents

Ramsey, R.S.; Todd, R.A.

1985-04-09

A helium ionization detection system is provided which produces stable operation of a conventional helium ionization detector while providing improved sensitivity and linearity. Stability is improved by applying pulsed dc supply voltage across the ionization detector, thereby modifying the sampling of the detectors output current. A unique pulse generator is used to supply pulsed dc to the detector which has variable width and interval adjust features that allows up to 500 V to be applied in pulse widths ranging from about 150 nsec to about dc conditions.

Pulsed helium ionization detection system

DOEpatents

Ramsey, Roswitha S.; Todd, Richard A.

1987-01-01

A helium ionization detection system is provided which produces stable operation of a conventional helium ionization detector while providing improved sensitivity and linearity. Stability is improved by applying pulsed dc supply voltage across the ionization detector, thereby modifying the sampling of the detectors output current. A unique pulse generator is used to supply pulsed dc to the detector which has variable width and interval adjust features that allows up to 500 V to be applied in pulse widths ranging from about 150 nsec to about dc conditions.

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE PAGES

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

2016-10-04

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

Elastic constant and Brillouin oscillations in sputtered vitreous SiO2 thin films

NASA Astrophysics Data System (ADS)

Ogi, H.; Shagawa, T.; Nakamura, N.; Hirao, M.; Odaka, H.; Kihara, N.

2008-10-01

We studied the relationship between elastic constants and microstructure in sputtered vitreous SiO2 thin films using pump-probe picosecond laser ultrasound. The delayed probe light pulse is diffracted by the acoustic wave excited by the pump light pulse, inducing Brillouin oscillations, seen as reflectivity change in the probe pulse, whose frequency can be used to extract the sound velocity and elastic moduli. Theoretical calculations were made to explain the asymmetric response of Brillouin oscillations and to predict the possible error limit of the determined elastic constants. The thin films containing defects exhibited lower elastic constant. A micromechanics modeling was developed to evaluate defect porosity and attenuation caused by scattering was able to predict the defect size. Elastic moduli of the defect-free specimens increased with increasing sputtering power, eventually exceeding the bulk value, and correlated with phonon frequencies, indicating that the decrease in the Si-O-Si bond angle of the tetrahedral structure increased the stiffness.

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

Surface Roughness of Various Diamond-Like Carbon Films

NASA Astrophysics Data System (ADS)

Liu, Dongping; Liu, Yanhong; Chen, Baoxiang

2006-11-01

Atomic force microscopy is used to estimate and compare the surface morphology of hydrogenated and hydrogen-free diamond-like carbon (DLC) films. The films were prepared by using DC magnetron sputtering of a graphite target, pulsed cathodic carbon arcs, electron cyclotron resonance (ECR), plasma source ion implantation and dielectric barrier discharge (DBD). The difference in the surface structure is presented for each method of deposition. The influences of various discharge parameters on the film surface properties are discussed based upon the experimental results. The coalescence process via the diffusion of adsorbed carbon species is responsible for the formation of hydrogen-free DLC films with rough surfaces. The films with surface roughness at an atomic level can be deposited by energetic ion impacts in a highly ionized carbon plasma. The dangling bonds created by atomic hydrogen lead to the uniform growth of hydrocarbon species at the a-C:H film surfaces of the ECR or DBD plasmas.

Nanoscale deformation mechanism of TiC/a-C nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. Q.; Pei, Y. T.; Shaha, K. P.

2009-06-01

This paper concentrates on the deformation behavior of amorphous diamondlike carbon composite materials. Combined nanoindentation and ex situ cross-sectional transmission electron microscopy investigations are carried out on TiC/a-C nanocomposite films, with and without multilayered structures deposited by pulse dc magnetron sputtering. It is shown that by controlling the distribution of nanocrystallites forming nanoscale multilayers, the system can be used as a 'microstructural ruler' that is able to distinguish various deformation patterns, which can be hardly detected otherwise in a homogeneous structure. It is shown that rearrangement of nanocrystallites and displacement of a-C matrix occur at length scales from tens ofmore » nanometer down to 1 nm. At submicrometer scale homogeneous nucleation of multiple shear bands has been observed within the nanocomposites. The multilayered structure in the TiC/a-C nanocomposite film contributes to an enhanced toughness.« less

Development of strain gages for use to 1311 K (1900 F)

NASA Technical Reports Server (NTRS)

Lemcoe, M. M.

1974-01-01

A high temperature electric resistance strain gage system was developed and evaluated to 1366 K (2000 F) for periods of at least one hour. Wire fabricated from a special high temperature strain gage alloy (BCL-3), was used to fabricate the gages. Various joining techniques (NASA butt welding, pulse arc, plasma needle arc, and dc parallel gap welding) were investigated for joining gage filaments to each other, gage filaments to lead-tab ribbons, and lead-tab ribbons to lead wires. The effectiveness of a clad-wire concept as a means of minimizing apparent strain of BCL-3 strain gages was investigated by sputtering platinum coatings of varying thicknesses on wire samples and establishing the optimum coating thickness--in terms of minimum resistivity changes with temperature. Finally, the moisture-proofing effectiveness of barrier coatings subjected to elevated temperatures was studied, and one commercial barrier coating (BLH Barrier H Waterproofing) was evaluated.

Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications

NASA Astrophysics Data System (ADS)

Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Sasinková, V.; Boháček, P.; Arbet, J.

2018-03-01

N-doped carbon thin films were deposited on a silicon substrate and quartz glass by RF reactive magnetron sputtering using a carbon target and an Ar+N2 gas mixture. During the magnetron sputtering, the substrate holder temperatures was kept at 800 °C. The carbon film thickness on the silicon substrate was about 70 nm, while on the quartz glass it was in the range 15 nm – 60 nm. The elemental concentration in the films was determined by RBS and ERD. Raman spectroscopy was used to evaluate the intensity ratios I D/I G of the D and G peaks of the carbon films. The transmission photocathodes prepared were placed in the hollow-cathode assembly of a Pierce-structure DC gun to produce photoelectrons. The quantum efficiency (QE) was calculated from the laser energy and cathode charge measured. The properties of the transmission photocathodes based on semitransparent N-doped carbon thin films on quartz glass and their potential for application in DC gun technology are discussed.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Research and Development for Continued Performance Improvement in Flexible a-Si PV

DTIC Science & Technology

2010-12-14

accomplished, however, at low temperatures silicides tend to form on the surface of the filament, which affected filament lifetime and deposition rate...considered. Titanium Nitride, sputtered As an alternative to the hot wire deposition of silicon, samples were prepared with various thicknesses of...Silicon 21 Insitu DC Sputtering Titanium Nitride 22 Metal Machine 2 ឈ> RF Oxygen Plasma Silicon Dioxide 20. Oxygen Etch Table A.4.1 Open circuit

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Strong and multi-antigen specific immunity by hepatitis B core antigen (HBcAg)-based vaccines in a murine model of chronic hepatitis B: HBcAg is a candidate for a therapeutic vaccine against hepatitis B virus.

PubMed

Akbar, Sheikh Mohammad Fazle; Chen, Shiyi; Al-Mahtab, Mamun; Abe, Masanori; Hiasa, Yoichi; Onji, Morikazu

2012-10-01

Experimental evidence suggests that hepatitis B core antigen (HBcAg)-specific cytotoxic T lymphocytes (CTL) are essential for the control of hepatitis B virus (HBV) replication and prevention of liver damage in patients with chronic hepatitis B (CHB). However, most immune therapeutic approaches in CHB patients have been accomplished with hepatitis B surface antigen (HBsAg)-based prophylactic vaccines with unsatisfactory clinical outcomes. In this study, we prepared HBsAg-pulsed dendritic cells (DC) and HBcAg-pulsed DC by culturing spleen DC from HBV transgenic mice (HBV TM) and evaluated the immunomodulatory capabilities of these antigens, which may serve as a better therapy for CHB. The kinetics of HBsAg, antibody levels against HBsAg (anti-HBs), proliferation of HBsAg- and HBcAg-specific lymphocytes, production of antigen-specific CTL, and activation of endogenous DC were compared between HBV TM vaccinated with either HBsAg- or HBcAg-pulsed DC. Vaccination with HBsAg-pulsed DC induced HBsAg-specific immunity, but failed to induce HBcAg-specific immunity in HBV TM. However, immunization of HBV TM with HBcAg-pulsed DC resulted in: (1) HBsAg negativity, (2) production of anti-HBs, and (3) development of HBsAg- and HBcAg-specific T cells and CTL in the spleen and the liver. Additionally, significantly higher levels of activated endogenous DC were detected in HBV TM immunized with HBcAg-pulsed DC compared to HBsAg-pulsed DC (p<0.05). The capacity of HBcAg to modulate both HBsAg- and HBcAg-specific immunity in HBV TM, and activation of endogenous DC in HBV TM without inducing liver damage suggests that HBcAg should be an integral component of the therapeutic vaccine against CHB. Copyright © 2012 Elsevier B.V. All rights reserved.

Development of an inductively coupled impulse sputtering source for coating deposition

NASA Astrophysics Data System (ADS)

Loch, Daniel Alexander Llewellyn

In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in good agreement with the model expectations showing that electron collisions are the main excitation mechanism. The plasma potential was measured as 20 eV, this is an ideal level for good adatom mobility with reduced lattice defects. All surfaces in the via were coated, perpendicular column growth on the sidewalls indicates a predominantly ionised metal flux to the substrate and the deposition rates agree with the literature value of the sputter yield of the materials. The results of the studies show that ICIS is a viable process for the deposition of magnetic coatings with high ionisation in the plasma.

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

1990-01-01

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

NASA Astrophysics Data System (ADS)

Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

2018-04-01

In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

Phase separation in NiCrN coatings induced by N2 addition in the gas phase: A way to generate magnetic thin films by reactive sputtering of a non-magnetic NiCr target

NASA Astrophysics Data System (ADS)

Luciu, I.; Duday, D.; Choquet, P.; Perigo, E. A.; Michels, A.; Wirtz, T.

2016-12-01

Magnetic coatings are used for a lot of applications from data storage in hard discs, spintronics and sensors. Meanwhile, magnetron sputtering is a process largely used in industry for the deposition of thin films. Unfortunately, deposition of magnetic coatings by magnetron sputtering is a difficult task due to the screening effect of the magnetic target lowering the magnetic field strength of the magnet positioned below the target, which is used to generate and trap ions in the vicinity of the target surface to be sputtered. In this work we present an efficient method to obtain soft magnetic thin films by reactive sputtering of a non-magnetic target. The aim is to recover the magnetic properties of Ni after dealloying of Ni and Cr due to the selective reactivity of Cr with the reactive nitrogen species generated during the deposition process. The effects of nitrogen content on the dealloying and DC magnetron sputtering (DCMS) deposition processes are studied here. The different chemical compositions, microstructures and magnetic properties of DCMS thin films obtained by sputtering in reactive gas mixtures with different ratios of Ar/N2 from a non-magnetic Ni-20Cr target have been determined. XPS data indicate that the increase of nitrogen content in the films has a strong influence on the NiCr phase decomposition into Ni and CrN, leading to ferromagnetic coatings due to the Ni phase. XRD results show that the obtained Ni-CrN films consist of a metallic fcc cubic Ni phase mixed with fcc cubic CrN. The lattice parameter decreases with the N2 content and reaches the theoretical value of the pure fcc-Ni, when Cr is mostly removed from the Ni-Cr phase. Dealloying of Cr from a Ni80-Cr20 solid solution is achieved in our experimental conditions and the deposition of Ni ferromagnetic coatings embedding CrN from a non-magnetic target is possible with reactive DC magnetron sputtering.

Integrated arc suppression unit for defect reduction in PVD applications

NASA Astrophysics Data System (ADS)

Li, Jason; Narasimhan, Murali K.; Pavate, Vikram; Loo, David; Rosenblum, Steve; Trubell, Larry; Scholl, Richard; Seamons, Scott; Hagerty, Chris; Ramaswami, Sesh

1997-09-01

Arcing between the target and plasma during PVD deposition causes substantial damage to the target and splats and other contamination on the deposited films. Arc-related damages and defects are frequently encountered in microelectronics manufacturing and contributes largely to reduced wafer yields. Arcing is caused largely by the charge buildup at the contaminated sites on the target surface that contains either nonconducting inclusions or nodules. Arc suppression is a key issue for defect reduction, yield improvement and for reliable high quality metallization. An Integrated Arc Suppression Unit (IASU) has been designed for Endura HP PVDTM sputtering sources. The integrated design reduces cable length from unit to source and reduces electrical energy stored in the cable. Active arc handling mode, proactive arc prevention mode, and passive by-pass arc counting mode are incorporated into the same unit. The active mode is designed to quickly respond to chamber conditions, like a large chamber voltage drop, that signals a arc. The self run mode is designed to proactively prevent arc formation by pulsing and reversing target voltage at 50 kHz. The design of the IASU, also called mini small package arc repression circuit--low energy unit (mini Sparc-le), has been optimized for various DC magnetron sources, plasma stability, chamber impedance, power matching, CE MARK test, and power dissipation. Process characterization with Ti, TiN and Al sputtering indicates that the unit has little adverse impact on film properties. Mini Sparc-le unit has been shown here to significantly reduce splats occurrence in Al sputtering. Marathon test of the unit with Ti/TiN test demonstrated the unit's reliability and its ability to reduce sensitivity of defects to target characteristics.

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Chou, Ying-Hung; Yan, Jheng-Tai; Lee, Hsin-Ying; Lee, Ching-Ting

2008-02-01

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

The structure and photocatalytic activity of TiO2 thin films deposited by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Yang, W. J.; Hsu, C. Y.; Liu, Y. W.; Hsu, R. Q.; Lu, T. W.; Hu, C. C.

2012-12-01

This paper seeks to determine the optimal settings for the deposition parameters, for TiO2 thin film, prepared on non-alkali glass substrates, by direct current (dc) sputtering, using a ceramic TiO2 target in an argon gas environment. An orthogonal array, the signal-to-noise ratio and analysis of variance are used to analyze the effect of the deposition parameters. Using the Taguchi method for design of a robust experiment, the interactions between factors are also investigated. The main deposition parameters, such as dc power (W), sputtering pressure (Pa), substrate temperature (°C) and deposition time (min), were optimized, with reference to the structure and photocatalytic characteristics of TiO2. The results of this study show that substrate temperature and deposition time have the most significant effect on photocatalytic performance. For the optimal combination of deposition parameters, the (1 1 0) and (2 0 0) peaks of the rutile structure and the (2 0 0) peak of the anatase structure were observed, at 2θ ˜ 27.4°, 39.2° and 48°, respectively. The experimental results illustrate that the Taguchi method allowed a suitable solution to the problem, with the minimum number of trials, compared to a full factorial design. The adhesion of the coatings was also measured and evaluated, via a scratch test. Superior wear behavior was observed, for the TiO2 film, because of the increased strength of the interface of micro-blasted tools.

Ultrasensitive hydrogen sensor based on Pt-decorated WO₃ nanorods prepared by glancing-angle dc magnetron sputtering.

PubMed

Horprathum, M; Srichaiyaperk, T; Samransuksamer, B; Wisitsoraat, A; Eiamchai, P; Limwichean, S; Chananonnawathorn, C; Aiempanakit, K; Nuntawong, N; Patthanasettakul, V; Oros, C; Porntheeraphat, S; Songsiriritthigul, P; Nakajima, H; Tuantranont, A; Chindaudom, P

2014-12-24

In this work, we report an ultrasensitive hydrogen (H2) sensor based on tungsten trioxide (WO3) nanorods decorated with platinum (Pt) nanoparticles. WO3 nanorods were fabricated by dc magnetron sputtering with a glancing angle deposition (GLAD) technique, and decorations of Pt nanoparticles were performed by normal dc sputtering on WO3 nanorods with varying deposition time from 2.5 to 15 s. Crystal structures, morphologies, and chemical information on Pt-decorated WO3 nanorods were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoelectron spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of WO3 nanorods was investigated over a low concentration range of 150-3000 ppm of H2 at 150-350 °C working temperatures. The results showed that the H2 response greatly increased with increasing Pt-deposition time up to 10 s but then substantially deteriorated as the deposition time increased further. The optimally decorated Pt-WO3 nanorod sensor exhibited an ultrahigh H2 response from 1530 and 214,000 to 150 and 3000 ppm of H2, respectively, at 200 °C. The outstanding gas-sensing properties may be attributed to the excellent dispersion of fine Pt nanoparticles on WO3 nanorods having a very large effective surface area, leading to highly effective spillover of molecular hydrogen through Pt nanoparticles onto the WO3 nanorod surface.

Investigations into the Anti-Felting Properties of Sputtered Wool Using Plasma Treatment

NASA Astrophysics Data System (ADS)

M. Borghei, S.; Shahidi, S.; Ghoranneviss, M.; Abdolahi, Z.

2013-01-01

In this research the effects of mordant and plasma sputtering treatments on the crystallinity and morphological properties of wool fabrics were investigated. The felting behavior of the treated samples was also studied. We used madder as a natural dye and copper sulfate as a metal mordant. We also used copper as the electrode material in a DC magnetron plasma sputtering device. The anti-felting properties of the wool samples before and after dying was studied, and it was shown that the shrink resistance and anti-felting behavior of the wool had been significantly improved by the plasma sputtering treatment. In addition, the percentage of crystallinity and the size of the crystals were investigated using an X-ray diffractometer, and a scanning electron microscope was used for morphological analysis. The amount of copper particles on the surface of the mordanted and sputtered fabrics was studied using the energy dispersive X-ray (EDX) method, and the hydrophobic properties of the samples were examined using the water drop test. The results show that with plasma sputtering treatment, the hydrophobic properties of the surface of wool become super hydrophobic.

Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Sillassen, M.; Eklund, P.; Sridharan, M.; Pryds, N.; Bonanos, N.; Bøttiger, J.

2009-05-01

Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr-Y (80/20 at. %) alloy target. Films deposited at floating potential had a ⟨111⟩ texture. Single-line profile analysis of the 111 x-ray diffraction peak yielded a grain size of ˜20 nm and a microstrain of ˜2% regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from -70 to -200 V showed a reduced grain size for higher bias voltages, yielding a grain size of ˜6 nm and a microstrain of ˜2.5% at bias voltages of -175 and -200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.14 and 1.30 eV.

Investigation of percolation thickness of sputter coated thin NiCr films on clear float glass

NASA Astrophysics Data System (ADS)

Erkan, Selen; Arpat, Erdem; Peters, Sven

2017-11-01

Percolation thickness of reactively sputtered nickel chromium (NiCr) thin films is reported in this study. Nickel-chromium films with the thicknesses in between 1 and 10 nm were deposited on 4 mm clear glass substrate by dc magnetron sputtering. Optical properties such as refractive index, extinction coefficient and also sheet resistance, carrier concentration and mobility of NiCr films were determined by a combination of variable-angle spectroscopic ellipsometry and four point probe measurements. We show both the percolation phenomena in atmosphere and critical percolation thickness for thin NiCr films by both electrical and optical techniques. The two techniques gave consistent results with each other.

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

NASA Astrophysics Data System (ADS)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

2013-10-01

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

High-voltage supply for neutron tubes in well-logging applications

DOEpatents

Humphreys, D.R.

1982-09-15

A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

High voltage supply for neutron tubes in well logging applications

DOEpatents

Humphreys, D. Russell

1989-01-01

A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S.; Darma, Y.

In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by meanmore » XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.« less

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

NASA Astrophysics Data System (ADS)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Penning discharge ion source with self-cleaning aperture

DOEpatents

Gavin, Basil F.; MacGill, Robert A.; Thatcher, Raymond K.

1982-01-01

An ion source of the Penning discharge type having a self-cleaning aperture is provided by a second dynode (24) with an exit aperture (12) in a position opposite a first dynode 10a, from which the ions are sputtered, two opposing cathodes (14, 16), each with an anode (18, 20) for accelerating electrons emitted from the cathodes into a cylindrical space defined by the first and second dynode. A support gas maintained in this space is ionized by the electrons. While the cathodes are supplied with a negative pulse to emit electrons, the first dynode is supplied with a negative pulse (e.g., -300 V) to attract atoms of the ionized gas (plasma). At the same time, the second dynode may also be supplied with a small voltage that is negative with respect to the plasma (e.g., -5 V) for tuning the position of the plasma miniscus for optimum extraction geometry. When the negative pulse to the first dynode is terminated, the second dynode is driven strongly negative (e.g., -600 V) thereby allowing heavy sputtering to take place for a short period to remove virtually all of the atoms deposited on the second dynode from material sputtered off the first dynode. An extractor (22) immediately outside the exit aperture of the second dynode is maintained at ground potential during this entire period of sputtering while the anode, dynode and cathode reference voltage is driven strongly positive (about +20 kV to +30 kV) so that ions accelerated through the aperture will be at ground potential. In that manner, material from the first dynode deposited on the second dynode will be sputtered, in time, to add to the ion beam. Atoms sputtered from the second dynode which do not become ionized and exit through the slit will be redeposited on the first dynode, and hence recycled for further ion beam generation during subsequent operating cycles.

GHz laser-free time-resolved transmission electron microscopy: A stroboscopic high-duty-cycle method

DOE PAGES

Qiu, Jiaqi; Zhu, Yimei; Ha, Gwanghui; ...

2015-11-10

In this study, a device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second electron pulse sequences (pulse trains) at >1 GHz repetition rates, as well as controllably manipulates the resulting pulses. Ultimately, it leads to negligible electron pulse phase-space degradation compared to the incomingmore » dc beam parameters. The temporal pulse length and repetition rate for the EMMP can be continuously tunable over wide ranges.« less

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

TiN films fabricated by reactive gas pulse sputtering: A hybrid design of multilayered and compositionally graded structures

NASA Astrophysics Data System (ADS)

Yang, Jijun; Zhang, Feifei; Wan, Qiang; Lu, Chenyang; Peng, Mingjing; Liao, Jiali; Yang, Yuanyou; Wang, Lumin; Liu, Ning

2016-12-01

Reactive gas pulse (RGP) sputtering approach was used to prepare TiN thin films through periodically changing the N2/Ar gas flow ratio. The obtained RGPsbnd TiN film possessed a hybrid architecture containing compositionally graded and multilayered structures, composed of hcp Ti-phase and fcc TiN-phase sublayers. Meanwhile, the RGP-TiN film exhibited a composition-oscillation along the film thickness direction, where the Ti-phase sublayer had a compositional gradient and the TiN-phase retained a constant stoichiometric ratio of Ti:N ≈ 1. The film modulation ratio λ (the thicknesses ratio of the Ti and TiN-phase sublayer) can be effectively tuned by controlling the undulation behavior of the N2 partial flow rate. Detailed analysis showed that this hybrid structure originated from a periodic transition of the film growth mode during the reactive sputtering process.

Pulsed microdischarge with inductively coupled plasma mass spectrometry for elemental analysis on solid metal samples.

PubMed

Li, Weifeng; Yin, Zhibin; Cheng, Xiaoling; Hang, Wei; Li, Jianfeng; Huang, Benli

2015-05-05

Pulsed microdischarge employed as source for direct solid analysis was investigated in N2 environment at atmospheric pressure. Compared with direct current (DC) microdischarge, it exhibits advantages with respect to the ablation and emission of the sample. Comprehensive evidence, including voltage-current relationship, current density (j), and electron density (ne), suggests that pulsed microdischarge is in the arc regime while DC microdischarge belongs to glow. Capability in ablating metal samples demonstrates that pulsed microdischarge is a viable option for direct solid sampling because of the enhanced instantaneous energy. Using optical spectrometer, only common emission lines of N2 can be acquired in DC mode, whereas primary atomic and ionic lines of the sample are obtained in the case of pulsed mode. Calculations show a significant difference in N2 vibrational temperatures between DC and pulsed microdischarge. Combined with inductively coupled plasma mass spectrometry (ICPMS), pulsed microdischarge exhibits much better performances in calibration linearity and limits of detection (LOD) than those of DC discharge in direct analysis of samples of different matrices. To improve transmission efficiency, a mixture of Ar and N2 was employed as discharge gas as well as carrier gas in follow-up experiments, facilitating that LODs of most elements reached ng/g.

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Models of MOS and SOS devices

NASA Technical Reports Server (NTRS)

Gassaway, J. D.; Mahmood, Q.; Trotter, J. D.

1980-01-01

Quarterly report describes progress in three programs: dc sputtering machine for aluminum and aluminum alloys; two dimensional computer modeling of MOS transistors; and development of computer techniques for calculating redistribution diffusion of dopants in silicon on sapphire films.

Visualization and mechanisms of splashing erosion of electrodes in a DC air arc

NASA Astrophysics Data System (ADS)

Wu, Yi; Cui, Yufei; Rong, Mingzhe; Murphy, Anthony B.; Yang, Fei; Sun, Hao; Niu, Chunping; Fan, Shaodi

2017-11-01

The splashing erosion of electrodes in a DC atmospheric-pressure air arc has been investigated by visualization of the electrode surface and the sputtered droplets, and tracking of the droplet trajectories, using image processing techniques. A particle tracking velocimetry algorithm has been introduced to measure the sputtering velocity distribution. Erosion of both tungsten-copper and tungsten-ceria electrodes is studied; in both cases electrode erosion is found to be dominated by droplet splashing rather than metal evaporation. Erosion is directly influenced by both melting and the formation of plasma jets, and can be reduced by the tuning of the plasma jet and electrode material. The results provide an understanding of the mechanisms that lead to the long lifetime of tungsten-copper electrodes, and may provide a path for the design of the electrode system subjected to electric arc to minimize erosion.

Efficiency Enhancement in DC Pulsed Gas Discharge Memory Panel

NASA Astrophysics Data System (ADS)

Okamoto, Yukio

1983-01-01

Much improvement in the luminous efficiency of a dc pulsed gas discharge memory panel for color TV display was achieved by shortening the sustaining pulse duration. High energy electrons can thus be produced in the pulsed discharge with fast rise times. Calculated optimum value of E/P in a Xe gas discharge is 7-8 V/cm\\cdotTorr.

Microcurrent therapeutic technique for treatment of radiation toxicity

DOEpatents

Lennox, Arlene; Funder, Sandra

2000-01-01

The present technique provides a method of remediating the toxicities associated with radiation therapy. A conductive gel is applied to the affected bodily area. A sinusoidally pulsed biphasic DC current is then applied to the affected bodily area using at least one electrode. The electrode is manipulated using active tactile manipulation by for a predetermined time and the frequency of the sinusoidally pulsed biphasic DC current is decreased during the course of the treatment. The method also includes applying a spiked pulsed biphasic DC current to the affected bodily area using at least one electrode. This electrode is also manipulated using active tactile manipulation by for a predetermined time and the frequency of the spiked pulsed biphasic DC current is also decreased during the course of the treatment.

Tests of a sputtered MoS2 lubricant film in various environments

NASA Technical Reports Server (NTRS)

Vest, C. E.

1976-01-01

This paper discusses conditions and results of several tests of a DC sputtered MoS2 dry lubricant film. The test components were miniature precision ball bearings and rings and blocks; the surrounding atmospheres were laboratory air, pure helium, vacuum to 10 to the -8th power torr, and a perfluoroalkylpolyether oil. The results showed that the lubricant would perform satisfactorily under lightly loaded (450 gm) ball bearings in vacuum and would not perform well under a 66-kg load in air, a 132-kg load in helium, or a 330-kg load under oil. These tests and others show that the sputtered MoS2 film has some desirable features for space applications as well as some definite limitations.

Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

2011-10-01

Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

Powerplexer

NASA Technical Reports Server (NTRS)

Woods, J. M. (Inventor)

1973-01-01

An electrical power distribution system is described for use in providing different dc voltage levels. A circuit is supplied with DC voltage levels and commutates pulses for timed intervals onto a pair of distribution wires. The circuit is driven by a command generator which places pulses on the wires in a timed sequence. The pair of wires extend to voltage strippers connected to the various loads. The voltage strippers each respond to the pulse dc levels on the pair of wires and form different output voltages communicated to each load.

Avoiding the side effects of electric current pulse application to electroporated cells in disposable small volume cuvettes assures good cell survival.

PubMed

Grys, Maciej; Madeja, Zbigniew; Korohoda, Włodzimierz

2017-01-01

The harmful side effects of electroporation to cells due to local changes in pH, the appearance of toxic electrode products, temperature increase, and the heterogeneity of the electric field acting on cells in the cuvettes used for electroporation were observed and discussed in several laboratories. If cells are subjected to weak electric fields for prolonged periods, for example in experiments on cell electrophoresis or galvanotaxis the same effects are seen. In these experiments investigators managed to reduce or eliminate the harmful side effects of electric current application. For the experiments, disposable 20 μl cuvettes with two walls made of dialysis membranes were constructed and placed in a locally focused electric field at a considerable distance from the electrodes. Cuvettes were mounted into an apparatus for horizontal electrophoresis and the cells were subjected to direct current electric field (dcEF) pulses from a commercial pulse generator of exponentially declining pulses and from a custom-made generator of double and single rectangular pulses. More than 80% of the electroporated cells survived the dcEF pulses in both systems. Side effects related to electrodes were eliminated in both the flow through the dcEF and in the disposable cuvettes placed in the focused dcEFs. With a disposable cuvette system, we also confirmed the sensitization of cells to a dcEF using procaine by observing the loading of AT2 cells with calceine and using a square pulse generator, applying 50 ms single rectangular pulses. We suggest that the same methods of avoiding the side effects of electric current pulse application as in cell electrophoresis and galvanotaxis should also be used for electroporation. This conclusion was confirmed in our electroporation experiments performed in conditions assuring survival of over 80% of the electroporated cells. If the amplitude, duration, and shape of the dcEF pulse are known, then electroporation does not depend on the type of pulse generator. This knowledge of the characteristics of the pulse assures reproducibility of electroporation experiments using different equipment.

Fabrication of a Ni nano-imprint stamp for an anti-reflective layer using an anodic aluminum oxide template.

PubMed

Park, Eun-Mi; Lim, Seung-Kyu; Ra, Senug-Hyun; Suh, Su-Jung

2013-11-01

Aluminum anodizing can alter pore diameter, density distribution, periodicity and layer thickness in a controlled way. Because of this property, porous type anodic aluminum oxide (AAO) was used as a template for nano-structure fabrication. The alumina layer generated at a constant voltage increased the pore size from 120 nm to 205 nm according to an increasing process time from 60 min to 150 min. The resulting fabricated AAO templates had pore diameters at or less than 200 nm. Ni was sputtered as a conductive layer onto this AAO template and electroplated using DC and pulse power. Comparing these Ni stamps, those generated from electroplating using on/reverse/off pulsing had an ordered pillar array and maintained the AAO template morphology. This stamp was used for nano-imprinting on UV curable resin coated glass wafer. Surface observations via electron microscopy showed that the nano-imprinted patterned had the same shape as the AAO template. A soft mold was subsequently fabricated and nano-imprinted to form a moth-eye structure on the glass wafer. An analysis of the substrate transmittance using UV-VIS/NIR spectroscopy showed that the transmittance of the substrate with the moth-eye structure was 5% greater that the non-patterned substrate.

Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

PubMed

Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

2016-05-01

In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films.

Formation of conductive copper lines by femtosecond laser irradiation of copper nitride film on plastic substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaodong; Yuan, Ningyi, E-mail: nyyuan@cczu.edu.cn; Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu

2015-05-15

In this paper, we report a simple method to form conductive copper lines by scanning a single-beam femtosecond pulse laser on a plastic substrate covered with copper nitride (Cu{sub 3}N) film. The Cu{sub 3}N films were prepared by DC magnetron sputtering in the presence of an Ar + N{sub 2} atmosphere at 100 °C. The influence of the laser power and scanning speed on the formed copper line width, surface features, and morphology was analyzed by means of optical microscopy, X-ray diffraction, non-contact 3D profilometer, and scanning electron microscopy. The experimental results demonstrate that low laser power and low scanningmore » speed favor the formation of uniform and flat Cu lines. After process optimization, copper lines with a width less than 5 μm were obtained, which provides an attractive application prospect in the field of flexible electronic devices.« less

Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

2017-09-01

Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

Monocyte-derived dendritic cells exposed to Der p 1 allergen enhance the recruitment of Th2 cells: major involvement of the chemokines TARC/CCL17 and MDC/CCL22.

PubMed

Hammad, Hamida; Smits, Hermelijn H; Ratajczak, Céline; Nithiananthan, Asokananthan; Wierenga, Eddy A; Stewart, Geoffrey A; Jacquet, Alain; Tonnel, Andre-Bernard; Pestel, Joël

2003-01-01

Dendritic cells (DC) are potent antigen - presenting cells that can orientate the immune response towards a Th1 or a Th2 type. DC produce chemokines that are involved in the recruitment of either Th1 cells, such as IP10 (CXCL10), Th2 cells such as TARC (CCL17) and MDC (CCL22), or non-polarized T cells such as RANTES (CCL5) and MIP-lalpha (CCL3). We investigated whether monocyte-derived DC (MD-DC) generated from healthy donors or from patients sensitive to Dermatophagoides pteronyssinus (Dpt) and exposed to the cysteine-protease Der p 1(allergen of Dpt), could upregulate the expression of chemokines involved in type 1 or type 2 T cell recruitment. MD-DC were pulsed with either Der p 1 or with LPS as the control and the chemokines produced were evaluated using ELISA and chemotaxis assays. Der p 1-pulsed DC from allergic patients showed increased TARC (CCL17) and MDC (CCL22) production without modifying IP-10 (CXCL10) release. Der p 1-pulsed DC from healthy donors showed only increased IP-10 (CXCL10) secretion. RANTES (CCL5) and MIP-lalpha (CCL3) production were similarly increased when DC were from healthy or allergic donors. The selective Th2 clone recruitment activity of supernatants from Der p 1-pulsed DC of allergic patients was inhibited by anti-TARC (CCL17) and anti-MDC (CCL22) neutralizing Abs. By using anti-IP10 (CXCL10) blocking Abs, supernatants of Der p 1-pulsed DC from healthy donors were shown to be involved in the recruitment of Th1 cells. These results suggest that in allergic patients exposed to house dust mites, DC may favour the exacerbation of the Th2 response via the increase in type 2 chemokine production. Copyright John Libbey Eurotext 2003.

Sputtered Pd as hydrogen storage for a chip-integrated microenergy system.

PubMed

Slavcheva, E; Ganske, G; Schnakenberg, U

2014-01-01

The work presents a research on preparation and physical and electrochemical characterisation of dc magnetron sputtered Pd films envisaged for application as hydrogen storage in a chip-integrated hydrogen microenergy system. The influence of the changes in the sputtering pressure on the surface structure, morphology, and roughness was analysed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AMF). The electrochemical activity towards hydrogen adsorption/desorption and formation of PdH were investigated in 0.5 M H2SO4 using the methods of cyclic voltammetry and galvanostatic polarisation. The changes in the electrical properties of the films as a function of the sputtering pressure and the level of hydrogenation were evaluated before and immediately after the electrochemical charging tests, using a four-probe technique. The research resulted in establishment of optimal sputter regime, ensuring fully reproducible Pd layers with highly developed surface, moderate porosity, and mechanical stability. Selected samples were integrated as hydrogen storage in a newly developed unitized microenergy system and tested in charging (water electrolysis) and discharging (fuel cell) operative mode at ambient conditions demonstrating a stable recycling performance.

Pulse width modulation inverter with battery charger

DOEpatents

Slicker, James M.

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

Pulse width modulation inverter with battery charger

NASA Technical Reports Server (NTRS)

Slicker, James M. (Inventor)

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Controlled growth of aligned carbon nanotube using pulsed glow barrier discharge

NASA Astrophysics Data System (ADS)

Nozaki, Tomohiro; Kimura, Yoshihito; Okazaki, Ken

2002-10-01

We first achieved a catalytic growth of aligned carbon nanotube (CNT) using atmospheric pressure pulsed glow barrier discharge combined with DC bias (1000 V). Aligned CNT can grow with the directional electric field, and this is a big challenge in barrier discharges since dielectric barrier does not allow DC bias and forces to use AC voltage to maintain stable plasma conditions. To overcome this, we developed a power source generating Gaussian-shape pulses at 20 kpps with 4% duty, and DC bias was applied to the GND electrode where Ni-, Fe-coated substrate existed. With positive pulse, i.e. substrate was the cathode, random growth of CNT was observed at about 10^9 cm-2. Growth rate significantly reduced when applied negative pulse; Negative glow formation near substrate is essential for sufficient supply of radical species to the catalyst. If -DC was biased, aligned CNT with 20 nm was synthesized because negative bias enhanced negative glow formation. Interestingly, 2 to 3 CNTs stuck each other with +DC bias, resulting in 50-70 nm and non-aligned CNT. Atmospheric pressure glow barrier discharges can be highly controlled and be a potential alternative to vacuum plasmas for CVD, micro-scale, nano-scale fabrication.

Characterization of MgO/Al2O3 Composite Film Prepared by DC Magnetron Sputtering and Its Secondary Electron Emission Properties

NASA Astrophysics Data System (ADS)

Wang, Feifei; Zhou, Fan; Wang, Jinshu; Liu, Wei; Zhang, Quan; Yin, Qiao

2018-07-01

Magnesium oxide (MgO) and MgO/Al2O3 composite thin films were prepared on silver substrates by DC magnetron sputtering technique and their secondary electron yields ( δ) and working durability under constant electron bombardment were investigated. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that uniform MgO/Al2O3 composite films were developed and residual Al exists in the films after sputtering of the Mg-Al alloy in an Ar-O2 mixed atmosphere on silver substrates heated at 400°C. The MgO/Al2O3 composite films show superior δ as high as 11.6 and much better resistance to electron bombardment than that of pure MgO films. Good secondary electron emission (SEE) properties of the MgO/Al2O3 film are probably due to the presence of alumina in the film, which has higher bond dissociation energy than MgO, as well as the presence of residual Al in the film, which contributes to effective electron transport in the film and diminished surface charging during SEE. With superior SEE performance, MgO/Al2O3 films have potential for practical electron multipliers in various vacuum electron devices.

Characterization of thin MoO3 films formed by RF and DC-magnetron reactive sputtering for gas sensor applications

NASA Astrophysics Data System (ADS)

Yordanov, R.; Boyadjiev, S.; Georgieva, V.; Vergov, L.

2014-05-01

The present work discusses a technology for deposition and characterization of thin molybdenum oxide (MoOx, MoO3) films studied for gas sensor applications. The samples were produced by reactive radio-frequency (RF) and direct current (DC) magnetron sputtering. The composition and microstructure of the films were studied by XPS, XRD and Raman spectroscopy, the morphology, using high resolution SEM. The research was focused on the sensing properties of the sputtered thin MoO3 films. Highly sensitive gas sensors were implemented by depositing films of various thicknesses on quartz resonators. Making use of the quartz crystal microbalance (QCM) method, these sensors were capable of detecting changes in the molecular range. Prototype QCM structures with thin MoO3 films were tested for sensitivity to NH3 and NO2. Even in as-deposited state and without heating the substrates, these films showed good sensitivity. Moreover, no additional thermal treatment is necessary, which makes the production of such QCM gas sensors simple and cost-effective, as it is fully compatible with the technology for producing the initial resonator. The films are sensitive at room temperature and can register concentrations as low as 50 ppm. The sorption is fully reversible, the films are stable and capable of long-term measurements.

Immunostimulatory activities of dendritic cells loaded with adenovirus vector carrying HBcAg/HBsAg

PubMed Central

Jia, Hongyu; Li, Chunling; Zhang, Yimin; Yu, Liang; Xiang, Dairong; Liu, Jun; Chen, Fengzhe; Han, Xiaochun

2015-01-01

Objective: This study is to investigate the immunostimulatory activities of dendritic cells (DCs) transfected with HBcAg and/or HBsAg recombinant adenovirus (rAd). Methods: DCs were transfected with rAd (DC/Ad-C+Ad-S, DC/Ad-C, and DC/Ad-S), or pulsed with HBcAg antigen (DC/HBcAg). Flow cytometry was used to detect the phenotype of DCs and the cytokine production of T lymphocytes. Mice were vaccinated with DCs transfected with rAd or pulsed with antigen, and DNA vaccine. Mixed lymphocyte reaction (MLR) was used to evaluate the T-cell stimulatory capacity, and HBcAg-specific cytotoxic T lymphocyte (CTL) activity was assessed. Results: Phenotypic analysis showed that DCs transfected with rAd or pulsed with HBcAg antigen exhibited mature phenotypes. MLR indicated no significant differences in stimulating T-cell proliferation between the DC/rAd and DC/HBcAg groups. When mixed with DCs, Th and Tc cells mainly secreted IFN-γ, indicating type I immune responses. In vaccinated mice, DCs transduced with rAd and pulsed with HBcAg induced significantly more IFN-γ secretion from Th cells, compared with DNA vaccine, indicating stronger Th1 response. Moreover, DCs transduced with rAd stimulated Tc cells to produce more IFN-γ, indicating stronger Tc1 response. In vaccinated mice, HBcAg-specific CTL activities were decreased in the following order: the DC/Ad-C+Ad-S, DC/Ad-C, DC/Ad-S, DC/HBcAg, and DNA vaccine groups. Conclusion: DCs transfected with rAd induce stronger Th1/Tc1 (type I) cell immune responses and specific CTL response than HBcAg-pulsed DCs or DNA vaccine. Our findings suggest that DCs transfected with rAd-C/rAd-S might provide an effective approach in the treatment of persistent hepatitis B virus infection. PMID:26064236

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content.more » The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.« less

The Use of Ion Implantation for Materials Processing.

DTIC Science & Technology

1983-09-28

SPUTTERING ANALYSIS WITH PIXE.......................... 31 J.M. Lambert, P.A. Treado, D . Trbojevic ,2 R.G. Alias, A.R. Knudson, G.W. Reynolds and F.R...Lambert and P. . Treado I D . Trbojevic R. G. Allas and A. R. Knudson 3 G. W. Reynolds and F. R. Vozzo 4 IGeorgetown University Washington, D . C. and...D.C. 20057 and 20375 D . Trbojevic Georgetown University, Washington, D.C. 20057 R.G. Alias and A.R. Knudson Naval Research Laboratory, Washington, D.C

Penning discharge ion source with self-cleaning aperture

DOEpatents

Gavin, B.F.; MacGill, R.A.; Thatcher, R.K.

1980-11-10

An ion source of the Penning discharge type having a self-cleaning aperture is provided by a second dynode with an exit aperture in a position opposite a first dynode, from which the ions are sputtered, two opposing cathodes, each with an anode for accelerating electrons emitted from the cathodes into a cylindrical space defined by the first and second dynode. A support gas maintained in this space is ionized by the electrons. While the cathodes are supplied with a negative pulse to emit electrons, the first dynode is supplied with a negative pulse (e.g., -300 V) to attract atoms of the ionized gas (plasma). At the same time, the second dynode may also be supplied with a small voltage that is negative with respect to the plasma (e.g., -5 V) for tuning the position of the plasma miniscus for optimum extraction geometry. When the negative pulse to the first dynode is terminated, the second dynode is driven strongly negative (e.g., -600 V) thereby allowing heavy sputtering to take place for a short period to remove virtually all of the atoms deposited on the second dynode from material sputtered off the first dynode. An extractor immediately outside the exit aperture of the second dynode is maintained at ground potential while the anode, dynode, and cathode reference voltage is driven strongly positive (about +20 kV to +30 kV) so that ions accelerated through the aperture will be at ground potential. Material from the first dynode deposited on the second dynode will be sputtered, in time, to add to the ion beam.

Response of larval sea lampreys (Petromyzon marinus) to pulsed DC electrical stimuli in laboratory experiments

USGS Publications Warehouse

Bowen, Anjanette K.; Weisser, John W.; Bergstedt, Roger A.; Famoye, Felix

2003-01-01

Four electrical factors that are used in pulsed DC electrofishing for larval sea lampreys (Petromyzon marinus) were evaluated in two laboratory studies to determine the optimal values to induce larval emergence over a range of water temperatures and conductivities. Burrowed larvae were exposed to combinations of pulsed DC electrical factors including five pulse frequencies, three pulse patterns, and two levels of duty cycle over a range of seven voltage gradients in two separate studies conducted at water temperatures of 10, 15, and 20°C and water conductivities of 25, 200, and 900 μS/cm. A four-way analysis of variance was used to determine significant (α = 0.05) influences of each electrical factor on larval emergence. Multiple comparison tests with Bonferroni adjustments were used to determine which values of each factor resulted in significantly higher emergence at each temperature and conductivity. Voltage gradient and pulse frequency significantly affected emergence according to the ANOVA model at each temperature and conductivity tested. Duty cycle and pulse pattern generally did not significantly influence the model. Findings suggest that a setting of 2.0 V/cm, 3 pulses/sec, 10% duty, and 2:2 pulse pattern seems the most promising in waters of medium conductivity and across a variety of temperatures. This information provides a basis for understanding larval response to pulsed DC electrofishing gear factors and identifies electrofisher settings that show promise to increase the efficiency of the gear during assessments for burrowed sea lamprey larvae.

Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

PubMed

Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

2015-04-29

Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed.

Zr-ZrO2 cermet solar coatings designed by modelling calculations and deposited by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, Qi-Chu; Hadavi, M. S.; Lee, K.-D.; Shen, Y. G.

2003-03-01

High solar performance Zr-ZrO2 cermet solar coatings were designed using a numerical computer model and deposited experimentally. The layer thickness and Zr metal volume fraction for the Zr-ZrO2 cermet solar selective coatings on a Zr or Al reflector with a surface ZrO2 or Al2O3 anti-reflection layer were optimized to achieve maximum photo-thermal conversion efficiency at 80°C under concentration factors of 1-20 using the downhill simplex method in multi-dimensions in the numerical calculation. The dielectric function and the complex refractive index of Zr-ZrO2 cermet materials were calculated using Sheng's approximation. Optimization calculations show that Al2O3/Zr-ZrO2/Al solar coatings with two cermet layers and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimized Al2O3/Zr-ZrO2/Al solar coating film with two cermet layers has a high solar absorptance value of 0.97 and low hemispherical emittance value of 0.05 at 80°C for a concentration factor of 2. The Al2O3/Zr-ZrO2/Al solar selective coatings with two cermet layers were deposited using dc magnetron sputtering technology. During the deposition of Zr-ZrO2 cermet layer, a Zr metallic target was run in a gas mixture of argon and oxygen. By control of oxygen flow rate the different metal volume fractions in the cermet layers were achieved using dc reactive sputtering. A solar absorptance of 0.96 and normal emittance of 0.05 at 80°C were achieved.

Systemic Administration of Interleukin 2 Enhances the Therapeutic Efficacy of Dendritic Cell-Based Tumor Vaccines

NASA Astrophysics Data System (ADS)

Shimizu, K.; Fields, R. C.; Giedlin, M.; Mule, J. J.

1999-03-01

We have reported previously that murine bone marrow-derived dendritic cells (DC) pulsed with whole tumor lysates can mediate potent antitumor immune responses both in vitro and in vivo. Because successful therapy was dependent on host immune T cells, we have now evaluated whether the systemic administration of the T cell stimulatory/growth promoting cytokine interleukin-2 (IL-2) could enhance tumor lysate-pulsed DC-based immunizations to further promote protective immunity toward, and therapeutic rejection of, syngeneic murine tumors. In three separate approaches using a weakly immunogenic sarcoma (MCA-207), the systemic administration of non-toxic doses of recombinant IL-2 (20,000 and 40,000 IU/dose) was capable of mediating significant increases in the potency of DC-based immunizations. IL-2 could augment the efficacy of tumor lysate-pulsed DC to induce protective immunity to lethal tumor challenge as well as enhance splenic cytotoxic T lymphocyte activity and interferon-γ production in these treated mice. Moreover, treatment with the combination of tumor lysate-pulsed DC and IL-2 could also mediate regressions of established pulmonary 3-day micrometastases and 7-day macrometastases as well as established 14- and 28-day s.c. tumors, leading to either significant cure rates or prolongation in overall survival. Collectively, these findings show that nontoxic doses of recombinant IL-2 can potentiate the antitumor effects of tumor lysate-pulsed DC in vivo and provide preclinical rationale for the use of IL-2 in DC-based vaccine strategies in patients with advanced cancer.

Five years of full-scale utility demonstration of pulsed energization of electric precipitators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultz, S.A.; Jacobus, P.L.; Casey, P.J.

1996-11-01

In a conventional electrostatic precipitator (ESP) the applied dc voltage fulfills three functions: (1) generation of negative ions, (2) charging of particles, and (3) transport of the charged particles to the collecting plates. In the case of high resistivity fly-ash (often associated with the burning of low sulfur coal) the dc voltage is limited by repeated electrical discharges and in extreme cases by back-corona. Lowering the applied dc voltage reduces sparking and back-corona, but also reduces the field on the discharge wires and leads to poorly distributed ion generation as well as reduced charging and particle transport forces. Pulsed energization,more » which consists of superimposing high voltage pulses of short duration onto the existing base dc voltage, offers an attractive way to improve the collection efficiency of ESPs suffering from poor energization. The superimposed pulses become responsible for uniform ion generation while the underlying dc field continues to fulfill the function of particle charging and transport. This paper describes the five-year test of the ESP at Madison Gas and Electric`s Blount Station.« less

Method and apparatus for pulse width modulation control of an AC induction motor

DOEpatents

Geppert, Steven; Slicker, James M.

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

Method and apparatus for pulse width modulation control of an AC induction motor

NASA Technical Reports Server (NTRS)

Geppert, Steven (Inventor); Slicker, James M. (Inventor)

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Pulse-Width-Modulating Driver for Brushless dc Motor

NASA Technical Reports Server (NTRS)

Salomon, Phil M.

1991-01-01

High-current pulse-width-modulating driver for brushless dc motor features optical coupling of timing signals from low-current control circuitry to high-current motor-driving circuitry. Provides high electrical isolation of motor-power supply, helping to prevent fast, high-current motor-driving pulses from being coupled through power supplies into control circuitry, where they interfere with low-current control signals.

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Synthesis and characterization of MoB{sub 2−x} thin films grown by nonreactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinovskis, Paulius, E-mail: paulius.malinovskis@kemi.uu.se; Lewin, Erik; Jansson, Ulf

2016-05-15

DC magnetron sputtering was used to deposit molybdenum boride thin films for potential low-friction applications. The films exhibit a nanocomposite structure with ∼10 nm large MoB{sub 2−x} (x > 0.4) grains surrounded by a boron-rich tissue phase. The preferred formation of the metastable and substoichiometric hP3-MoB{sub 2} structure (AlB{sub 2}-type) is explained with kinetic constraints to form the thermodynamically stable hR18-MoB{sub 2} phase with a very complex crystal structure. Nanoindentation revealed a relatively high hardness of (29 ± 2) GPa, which is higher than bulk samples. The high hardness can be explained by a hardening effect associated with the nanocomposite microstructure where the surrounding tissuemore » phase restricts dislocation movement. A tribological study confirmed a significant formation of a tribofilm consisting of molybdenum oxide and boron oxide, however, without any lubricating effects at room temperature.« less

Effect of substrate rotation speed and off-center deposition on the structural, optical, and electrical properties of AZO thin films fabricated by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Turkoglu, F.; Koseoglu, H.; Zeybek, S.; Ozdemir, M.; Aygun, G.; Ozyuzer, L.

2018-04-01

In this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3 Ω cm were obtained for the AZO films.

Microstructural Analysis of TiAl x N y O z Coatings Fabricated by DC Reactive Sputtering

NASA Astrophysics Data System (ADS)

García-González, L.; Hernández-Torres, J.; Flores-Ramírez, N.; Martínez-Castillo, J.; García-Ramírez, P. J.; Muñoz-Saldaña, J.; Espinoza-Beltrán, F. J.

2009-02-01

TiAl x N y O z coatings were prepared by DC reactive sputtering on AISI D2 tool steel substrates, using a target of Ti-Al-O fabricated from a mixture of powders of Ti (22.60 wt.%), Al (24.77 wt.%), and O (52.63 wt.%). The coatings were deposited on substrates at room temperature in a reactive atmosphere of nitrogen and argon under a pressure of 8.5 × 10-3 mbar. X-ray diffraction, electron dispersive spectroscopy, Raman scattering, and nanoindentation techniques were employed to investigate the coatings. The results show that the increment in the nitrogen flow affects the structure and the mechanical properties of the coatings. The sample with the lowest nitrogen flow presented the highest hardness (10.5 GPa) and the Young’s modulus (179.5 GPa). The hardness of the coatings TiAl x N y O z as a function of crystalline grain size shows a behavior consistent with the Hall-Petch relation.

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

Spacer layer thickness dependent structural and magnetic properties of Co/Si multilayers

NASA Astrophysics Data System (ADS)

Roy, Ranjan; Singh, Dushyant; Kumar, M. Senthil

2018-05-01

In this article, the study of high resolution x-ray diffraction and magnetization of sputter deposited Co/Si multilayer is reported. Multilayers are prepared at ambient temperature by dc magnetron sputtering. Structural properties are studied by high resolution x-ray diffraction. Magnetic properties are studied at room temperature by vibrating sample magnetometer. Structural properties show that the Co layer is polycrystalline and the Si layer is amorphous. The magnetization study indicates that the samples are soft ferromagnetic in nature. The study of magnetization also shows that the easy axis of magnetization lies in the plane of the film.

ELECTRICAL PULSE COUNTER APPARATUS

DOEpatents

Kaufman, W.M.; Jeeves, T.A.

1962-09-01

A progressive electrical pulse counter circuit rs designed for the counting of a chain of input pulses. The circuit employs a series of direct connected bistable counting stages simultaneously pulsed by each input pulse and a delay means connected between each of the stages. Each bistable stage has two d-c operative states, which stage, when in its initial state, prevents the next succeeding stage from changing its condition when the latter stage is pulsed. Since the delay circuits between the stages prevents the immediate decay of the d-c state of each stage when the stages are pulsed, only one stage will change its state for each input pulse, thereby providing progressive stage-by-stage counting. (AEC)

An Optimized Method for Manufacturing a Clinical Scale Dendritic Cell-Based Vaccine for the Treatment of Glioblastoma

PubMed Central

Pogliani, Simona; Pellegatta, Serena; Antozzi, Carlo; Baggi, Fulvio; Gellera, Cinzia; Pollo, Bianca; Parati, Eugenio A.; Finocchiaro, Gaetano; Frigerio, Simona

2012-01-01

Immune-based treatments represent a promising new class of therapy designed to boost the immune system to specifically eradicate malignant cells. Immunotherapy may generate specific anti-tumor immune responses, and dendritic cells (DC), professional antigen-presenting cells, are widely used in experimental cancer immunotherapy. Several reports describe methods for the generation of mature, antigen-pulsed DC for clinical use. Improved quality and standardization are desirable to obtain GMP-compliant protocols. In this study we describe the generation of DC from 31 Glioblastoma (GB) patients starting from their monocytes isolated by immunomagnetic CD14 selection using the CliniMACS® device. Upon differentiation of CD14+ with IL-4 and GM-CSF, DC were induced to maturation with TNF-α, PGE2, IL-1β, and IL-6. Whole tumor lysate was obtained, for the first time, in a closed system using the semi-automated dissociator GentleMACS®. The yield of proteins improved by 130% compared to the manual dissociation method. Interestingly the Mean Fluorescence Intensity for CD83 increased significantly in DC pulsed with “new method” lysate compared to DC pulsed with “classical method” lysate. Our results indicate that immunomagnetic isolation of CD14+ monocytes using the CliniMACS® device and their pulsing with whole tumor lysate proteins is a suitable method for clinical-scale generation of high quality, functional DC under GMP-grade conditions. PMID:23284979

Avoiding neuromuscular stimulation in liver irreversible electroporation using radiofrequency electric fields

NASA Astrophysics Data System (ADS)

Castellví, Quim; Mercadal, Borja; Moll, Xavier; Fondevila, Dolors; Andaluz, Anna; Ivorra, Antoni

2018-02-01

Electroporation-based treatments typically consist of the application of high-voltage dc pulses. As an undesired side effect, these dc pulses cause electrical stimulation of excitable tissues such as motor nerves. The present in vivo study explores the use of bursts of sinusoidal voltage in a frequency range from 50 kHz to 2 MHz, to induce irreversible electroporation (IRE) whilst avoiding neuromuscular stimulation. A series of 100 dc pulses or sinusoidal bursts, both with an individual duration of 100 µs, were delivered to rabbit liver through thin needles in a monopolar electrode configuration, and thoracic movements were recorded with an accelerometer. Tissue samples were harvested three hours after treatment and later post-processed to determine the dimensions of the IRE lesions. Thermal damage due to Joule heating was ruled out via computer simulations. Sinusoidal bursts with a frequency equal to or above 100 kHz did not cause thoracic movements and induced lesions equivalent to those obtained with conventional dc pulses when the applied voltage amplitude was sufficiently high. IRE efficacy dropped with increasing frequency. For 100 kHz bursts, it was estimated that the electric field threshold for IRE is about 1.4 kV cm-1 whereas that of dc pulses is about 0.5 kV cm-1.

Unprecedented Al supersaturation in single-phase rock salt structure VAlN films by Al+ subplantation

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Hans, M.; Primetzhofer, D.; Lu, J.; Hultman, L.; Schneider, J. M.

2017-05-01

Modern applications of refractory ceramic thin films, predominantly as wear-protective coatings on cutting tools and on components utilized in automotive engines, require a combination of excellent mechanical properties, thermal stability, and oxidation resistance. Conventional design approaches for transition metal nitride coatings with improved thermal and chemical stability are based on alloying with Al. It is well known that the solubility of Al in NaCl-structure transition metal nitrides is limited. Hence, the great challenge is to increase the Al concentration substantially while avoiding precipitation of the thermodynamically favored wurtzite-AlN phase, which is detrimental to mechanical properties. Here, we use VAlN as a model system to illustrate a new concept for the synthesis of metastable single-phase NaCl-structure thin films with the Al content far beyond solubility limits obtained with conventional plasma processes. This supersaturation is achieved by separating the film-forming species in time and energy domains through synchronization of the 70-μs-long pulsed substrate bias with intense periodic fluxes of energetic Al+ metal ions during reactive hybrid high power impulse magnetron sputtering of the Al target and direct current magnetron sputtering of the V target in the Ar/N2 gas mixture. Hereby, Al is subplanted into the cubic VN grains formed by the continuous flux of low-energy V neutrals. We show that Al subplantation enables an unprecedented 42% increase in metastable Al solubility limit in V1-xAlxN, from x = 0.52 obtained with the conventional method to 0.75. The elastic modulus is 325 ± 5 GPa, in excellent agreement with density functional theory calculations, and approximately 50% higher than for corresponding films grown by dc magnetron sputtering. The extension of the presented strategy to other Al-ion-assisted vapor deposition methods or materials systems is straightforward, which opens up the way for producing supersaturated single-phase functional ceramic alloy thin films combining excellent mechanical properties with high oxidation resistance.

ASDTIC control and standardized interface circuits applied to buck, parallel and buck-boost dc to dc power converters

NASA Technical Reports Server (NTRS)

Schoenfeld, A. D.; Yu, Y.

1973-01-01

Versatile standardized pulse modulation nondissipatively regulated control signal processing circuits were applied to three most commonly used dc to dc power converter configurations: (1) the series switching buck-regulator, (2) the pulse modulated parallel inverter, and (3) the buck-boost converter. The unique control concept and the commonality of control functions for all switching regulators have resulted in improved static and dynamic performance and control circuit standardization. New power-circuit technology was also applied to enhance reliability and to achieve optimum weight and efficiency.

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auger, M. A.; Centro Nacional de Investigaciones Metalurgicas; Vazquez, L.

2006-01-15

We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values {alpha}{sub loc}=1.0 and {beta}{sub loc}=0.39, and global exponent values {alpha}=1.7 and {beta}=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability duemore » to nonlocal shadowing effects that take place during thin-film growth by sputtering.« less

Sputtered Pd as Hydrogen Storage for a Chip-Integrated Microenergy System

PubMed Central

Slavcheva, E.; Ganske, G.; Schnakenberg, U.

2014-01-01

The work presents a research on preparation and physical and electrochemical characterisation of dc magnetron sputtered Pd films envisaged for application as hydrogen storage in a chip-integrated hydrogen microenergy system. The influence of the changes in the sputtering pressure on the surface structure, morphology, and roughness was analysed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AMF). The electrochemical activity towards hydrogen adsorption/desorption and formation of PdH were investigated in 0.5 M H2SO4 using the methods of cyclic voltammetry and galvanostatic polarisation. The changes in the electrical properties of the films as a function of the sputtering pressure and the level of hydrogenation were evaluated before and immediately after the electrochemical charging tests, using a four-probe technique. The research resulted in establishment of optimal sputter regime, ensuring fully reproducible Pd layers with highly developed surface, moderate porosity, and mechanical stability. Selected samples were integrated as hydrogen storage in a newly developed unitized microenergy system and tested in charging (water electrolysis) and discharging (fuel cell) operative mode at ambient conditions demonstrating a stable recycling performance. PMID:24516356

Deposition and characterization of magnetron sputtered bcc tantalum

NASA Astrophysics Data System (ADS)

Patel, Anamika

The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum under increasing loads revealed high critical load values for failure (>15 N) for the bcc coatings versus the low load values (<9 N) for the beta coatings. The coating deposited on TaN interlayers on sputter-etched steel had better adhesion than those on steel surface without sputter etching. The results for this work have demonstrated that by controlling the various process parameters of do magnetron sputtering, high quality bcc Ta coatings of multi-micron thickness with excellent adhesion to steel can be made. An important contribution of this dissertation is in the enhancing an understanding of this process. The impact of this research will be in a number of fields where superior protective castings are needed. These include military applications, electronic components, chemical processing, and others.

Miniaturized two-stack Blumlein pulser with a variable repetition-rate for non-thermal irreversible-electroporation experiments

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Jeong, Jin-Young; Hong, Dongpyo; Park, Seunghyuk; Park, Gun-Sik

2017-01-01

Non-thermal irreversible electroporation (NTIRE) to avoid thermal damage to cells during intense DC ns pulsed electric fields (nsPEFs) is a recent modality for medical applications. This mechanism, related to bioelectrical dynamics of the cell, is linked to the effect of a DC electric field and a threshold effect with an electrically stimulated membrane for the charge distribution in the cell. To create the NTIRE condition, the pulse width of the nsPEF should be shorter than the charging time constant of the membrane related to the cell radius, membrane capacitance, cytoplasm resistivity, and medium resistivity. It is necessary to design and fabricate a very intense nanosecond DC electric field pulser that is capable of producing voltages up to the level of 100 kV/cm with an artificial pulse width (˜ns) with controllable repetition rates. Many devices to generate intense DC nsPEF using various pulse-forming line technologies have been introduced thus far. However, the previous Blumlein pulse-generating devices are clearly inefficient due to the energy loss between the input voltage and the output voltage. An improved two-stage stacked Blumlein pulse-forming line can overcome this limitation and decrease the energy loss from a DC power supply. A metal oxide silicon field-effect transistor switch with a fast rise and fall time would enable a high repetition rate (max. 100 kHz) and good endurance against very high voltages (DC ˜ 30 kV). The load is designed to match the sample for exposure to cell suspensions consisting of a 200 Ω resistor matched with a Blumlein circuit and two electrodes without the characteristic RC time effect of the circuit (capacitance =0.174 pF).

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

NASA Astrophysics Data System (ADS)

Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

2009-11-01

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

Decontamination of Streptococci biofilms and Bacillus cereus spores on plastic surfaces with DC and pulsed corona discharges

NASA Astrophysics Data System (ADS)

Koval'ová, Zuzana; Tarabová, Kataŕna; Hensel, Karol; Machala, Zdenko

2013-02-01

Cold air plasmas of DC and pulsed corona discharges: positive streamers and negative Trichel pulses were used for bio-decontamination of Streptococci biofilm and Bacillus cereus spores on polypropylene plastic surfaces. The reduction of bacterial population (evaluated as log10) in the biofilm on plastic surfaces treated by DC corona reached 2.4 logs with 10 min treatment time and 3.3 logs with 2 min treatment time with water spraying. The enhancement of plasma biocidal effects on the biofilm by electro-spraying of water through a hollow needle high-voltage electrode was investigated. No significant polarity effect was found with DC corona. Pulsed corona was demonstrated slightly more bactericidal for spores, especially in the negative polarity where the bacterial population reduction reached up to 2.2 logs at 10 min exposure time. Contribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.

Heavy particle transport in sputtering systems

NASA Astrophysics Data System (ADS)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

NASA Astrophysics Data System (ADS)

Murphy, N. R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, C. V.

2014-05-01

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50-1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

NASA Astrophysics Data System (ADS)

Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

2008-05-01

Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Pulsed Direct Current Electrospray: Enabling Systematic Analysis of Small Volume Sample by Boosting Sample Economy.

PubMed

Wei, Zhenwei; Xiong, Xingchuang; Guo, Chengan; Si, Xingyu; Zhao, Yaoyao; He, Muyi; Yang, Chengdui; Xu, Wei; Tang, Fei; Fang, Xiang; Zhang, Sichun; Zhang, Xinrong

2015-11-17

We had developed pulsed direct current electrospray ionization mass spectrometry (pulsed-dc-ESI-MS) for systematically profiling and determining components in small volume sample. Pulsed-dc-ESI utilized constant high voltage to induce the generation of single polarity pulsed electrospray remotely. This method had significantly boosted the sample economy, so as to obtain several minutes MS signal duration from merely picoliter volume sample. The elongated MS signal duration enable us to collect abundant MS(2) information on interested components in a small volume sample for systematical analysis. This method had been successfully applied for single cell metabolomics analysis. We had obtained 2-D profile of metabolites (including exact mass and MS(2) data) from single plant and mammalian cell, concerning 1034 components and 656 components for Allium cepa and HeLa cells, respectively. Further identification had found 162 compounds and 28 different modification groups of 141 saccharides in a single Allium cepa cell, indicating pulsed-dc-ESI a powerful tool for small volume sample systematical analysis.

Rarefaction windows in a high-power impulse magnetron sputtering plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos

2013-09-21

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point outmore » on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)« less

Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications.

PubMed

Vijayaraghavan, Rajani K; Gaman, Cezar; Jose, Bincy; McCoy, Anthony P; Cafolla, Tony; McNally, Patrick J; Daniels, Stephen

2016-02-01

We demonstrate the growth of multilayer and single-layer graphene on copper foil using bipolar pulsed direct current (DC) magnetron sputtering of a graphite target in pure argon atmosphere. Single-layer graphene (SG) and few-layer graphene (FLG) films are deposited at temperatures ranging from 700 °C to 920 °C within <30 min. We find that the deposition and post-deposition annealing temperatures influence the layer thickness and quality of the graphene films formed. The films were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical transmission spectroscopy techniques. Based on the above studies, a diffusion-controlled mechanism was proposed for the graphene growth. A single-step whole blood assay was used to investigate the anticoagulant activity of graphene surfaces. Platelet adhesion, activation, and morphological changes on the graphene/glass surfaces, compared to bare glass, were analyzed using fluorescence microscopy and SEM techniques. We have found significant suppression of the platelet adhesion, activation, and aggregation on the graphene-covered surfaces, compared to the bare glass, indicating the anticoagulant activity of the deposited graphene films. Our production technique represents an industrially relevant method for the growth of SG and FLG for various applications including the biomedical field.

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Development of a laser cleaning method for the first mirror surface of the charge exchange recombination spectroscopy diagnostics on ITER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznetsov, A. P., E-mail: APKuznetsov@mephi.ru; Buzinskij, O. I.; Gubsky, K. L.

A set of optical diagnostics is expected for measuring the plasma characteristics in ITER. Optical elements located inside discharge chambers are exposed to an intense radiation load, sputtering due to collisions with energetic atoms formed in the charge transfer processes, and contamination due to recondensation of materials sputtered from different parts of the construction of the chamber. Removing the films of the sputtered materials from the mirrors with the aid of pulsed laser radiation is an efficient cleaning method enabling recovery of the optical properties of the mirrors. In this work, we studied the efficiency of removal of metal oxidemore » films by pulsed radiation of a fiber laser. Optimization of the laser cleaning conditions was carried out on samples representing metal substrates polished with optical quality with deposition of films on them imitating the chemical composition and conditions expected in ITER. It is shown that, by a proper selection of modes of radiation exposure to the surface with a deposited film, it is feasible to restore the original high reflection characteristics of optical elements.« less

Early Oscillation Detection Technique for Hybrid DC/DC Converters

NASA Technical Reports Server (NTRS)

Wang, Bright L.

2011-01-01

Oscillation or instability is a situation that must be avoided for reliable hybrid DC/DC converters. A real-time electronics measurement technique was developed to detect catastrophic oscillations at early stages for hybrid DC/DC converters. It is capable of identifying low-level oscillation and determining the degree of the oscillation at a unique frequency for every individual model of the converters without disturbing their normal operations. This technique is specially developed for space-used hybrid DC/DC converters, but it is also suitable for most of commercial and military switching-mode power supplies. This is a weak-electronic-signal detection technique to detect hybrid DC/DC converter oscillation presented as a specific noise signal at power input pins. It is based on principles of feedback control loop oscillation and RF signal modulations, and is realized by using signal power spectral analysis. On the power spectrum, a channel power amplitude at characteristic frequency (CPcf) and a channel power amplitude at switching frequency (CPsw) are chosen as oscillation level indicators. If the converter is stable, the CPcf is a very small pulse and the CPsw is a larger, clear, single pulse. At early stage of oscillation, the CPcf increases to a certain level and the CPsw shows a small pair of sideband pulses around it. If the converter oscillates, the CPcf reaches to a higher level and the CPsw shows more high-level sideband pulses. A comprehensive stability index (CSI) is adopted as a quantitative measure to accurately assign a degree of stability to a specific DC/DC converter. The CSI is a ratio of normal and abnormal power spectral density, and can be calculated using specified and measured CPcf and CPsw data. The novel and unique feature of this technique is the use of power channel amplitudes at characteristic frequency and switching frequency to evaluate stability and identify oscillations at an early stage without interfering with a DC/DC converter s normal operation. This technique eliminates the probing problem of a gain/phase margin method by connecting the power input to a spectral analyzer. Therefore, it is able to evaluate stability for all kinds of hybrid DC/DC converters with or without remote sense pins, and is suitable for real-time and in-circuit testing. This frequency-domain technique is more sensitive to detect oscillation at early stage than the time-domain method using an oscilloscope.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

MD simulations of low energy deuterium irradiation on W, WC and W2C surfaces

NASA Astrophysics Data System (ADS)

Lasa, A.; Björkas, C.; Vörtler, K.; Nordlund, K.

2012-10-01

According to the present design beryllium (Be), tungsten (W) and carbon (C) will be the plasma facing materials in the ITER fusion reactor. Due to sputtering and subsequent re-deposition, mixing of these materials will occur. In this context, molecular dynamics simulations of cumulative, low energy and high flux D bombardment of pure W and tungsten carbides (WC, W2C) were carried out. The retention and sputtering properties as well as the structural deformation were analysed and comparisons to SDTrimSP simulations were made. Almost no tungsten is sputtered in the energy range considered and the D backscattering is lower in pure tungsten than in any of the tungsten carbides. In WC and W2C, the deuterium is mainly trapped forming small molecules, whereas mostly atomic D is present in pure W. The C sputtering increases with C content in the material, and shows a peak at the bombardment energy ˜50 eV, most likely due to the swift chemical sputtering mechanism. Pure W is seen to lose its crystallinity in the areas where D is present. After the D irradiation, the composition of both WC and W2C is mostly W in the topmost layers, due to preferential sputtering of C, an amorphous D-C mixture underneath and an undisturbed lattice in the rest of the cell.

Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

NASA Astrophysics Data System (ADS)

Ratova, Marina; Kelly, Peter J.; West, Glen T.; Tosheva, Lubomira; Edge, Michele

2017-01-01

Titanium dioxide - bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO2 evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO2 nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these tests confirmed that such enhancement of the photocatalytic properties is due to more efficient photogenerated charge carrier separation, as well as to the contribution of the intrinsic photocatalytic properties of Bi2WO6.

Shape-memory properties in Ni-Ti sputter-deposited film

NASA Technical Reports Server (NTRS)

Busch, J. D.; Johnson, A. D.; Lee, C. H.; Stevenson, D. A.

1990-01-01

A Ni-Ti alloy, generically called nitinol, was prepared from sputtering targets of two different compositions on glass substrates using a dc magnetron source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.

RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

NASA Astrophysics Data System (ADS)

Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

2016-04-01

The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

Structural and electrical properties of sputter deposited ZnO thin films

NASA Astrophysics Data System (ADS)

Muhammed Shameem P., V.; Mekala, Laxman; Kumar, M. Senthil

2018-05-01

The growth of zinc oxide thin films having different oxygen content was achieved at ambient temperature by reactive dc magnetron sputtering technique and their structural and electrical properties are studied. The structural studies show that the films are polycrystalline with a preferential orientation of the grains along the c-axis [002], which increases with increase in oxygen partial pressure. The grain size and the surface roughness of the zinc oxide films are found to decrease with increasing oxygen partial pressure. It is observed that the resistivity of the zinc oxide films can be tuned from semiconducting to insulating regime by varying the oxygen content.

Adhesion strength of sputtered TiAlN-coated WC insert tool

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

2013-09-09

The adhesion strength of TiAlN coating that deposited by using DC magnetron sputtering on WC insert tool are studied. TiAlN coating are deposited on Tungsten Carbide (WC) insert tool by varying negatively substrate bias from 79 to 221 volt and nitrogen flow rate from 30 to 72 sccm. The adhesion strength are obtained by using Rockwell indentation test method with a Brale diamond at applied load of 60,100 and 150 kgf. The lateral diameter of indentation is plotted on three different applied loads and the adhesion strength of TiAlN coating was obtained from the curved slopes at 100 and 150more » kgf. The lower curve slop indicated better adhesion strength. The results shows that the adhesion strength of sputterred TiAlN coating tend to increase as the negatively substrate bias and nitrogen flow rate are increased.« less

Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

DOE PAGES

Crouse, Dustin; Simon, John; Schulte, Kevin L.; ...

2018-01-31

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorousmore » concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.« less

Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crouse, Dustin; Simon, John; Schulte, Kevin L.

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorousmore » concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.« less

Low temperature fabrication of VO x thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

NASA Astrophysics Data System (ADS)

Dai, Jun; Wang, Xingzhi; He, Shaowei; Huang, Ying; Yi, Xinjian

2008-03-01

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼-2.05%/°C) and suitable square resistance 18.40 kΩ/□ (measured at 25 °C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2-16 μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210 °C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400-500 °C).

Linear facing target sputtering of the epitaxial Ga-doped ZnO transparent contact layer on GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Shin, Hyun-Su; Lee, Ju-Hyun; Kwak, Joon-Seop; Lee, Hyun Hwi; Kim, Han-Ki

2013-10-01

In this study, we reported on the plasma damage-free sputtering of epitaxial Ga-doped ZnO (GZO) films on the p-GaN layer for use as a transparent contact layer (TCL) for GaN-based light-emitting diodes (LEDs) using linear facing target sputtering (LFTS). Effective confinement of high-density plasma between faced GZO targets and the substrate position located outside of the plasma region led to the deposition of the epitaxial GZO TCL with a low sheet resistance of 25.7 Ω/s and a high transmittance of 84.6% on a p-GaN layer without severe plasma damage, which was found using the conventional dc sputtering process. The low turn-on voltage of the GaN-based LEDs with an LFTS-grown GZO TCL layer that was grown at a longer target-to-substrate distance (TSD) indicates that the plasma damage of the GaN-LED could be effectively reduced by adjusting the TSD during the LFTS process.

Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

2016-09-01

Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

Design, Fabrication, and Testing of a TiN Ti TiN Trilayer KID Array for 3mm CMB Observations

NASA Technical Reports Server (NTRS)

Lowitz, A. E.; Brown, A. D.; Mikula, V.; Stevenson, T. R.; Timbie, P. T.; Wollack, E. J.

2016-01-01

Kinetic inductance detectors (KIDs) are a promising technology for astronomical observations over a wide range of wavelengths in the mm and sub-mm regime. Simple fabrication, in as little as one lithographic layer, and passive frequency-domain multiplexing, with readout of up to 1000 pixels on a single line with a single cold amplifier, make KIDs an attractive solution for high-pixel-count detector arrays. We are developing an array that optimizes KIDs for optical frequencies near 100GHz to expand their usefulness in mm-wave applications, with a particular focus on CMBB-mode measurement efforts in association with the QUBIC telescope. We have designed, fabricated, and tested a 20-pixel prototype array using a simple quasi lumped microstrip design and pulsed DC reactive magnetron-sputtered TiNTiTiN trilayer resonators, optimized for detecting 100GHz (3mm) signals. Here we present a discussion of design considerations for the array, as well as preliminary detector characterization measurements and results from a study of TiN trilayer properties.

Generation of laser-induced periodic surface structures in indium-tin-oxide thin films and two-photon lithography of ma-N photoresist by sub-15 femtosecond laser microscopy for liquid crystal cell application

NASA Astrophysics Data System (ADS)

Klötzer, Madlen; Afshar, Maziar; Feili, Dara; Seidel, Helmut; König, Karsten; Straub, Martin

2015-03-01

Indium-tin-oxide (ITO) is a widely used electrode material for liquid crystal cell applications because of its transparency in the visible spectral range and its high electrical conductivity. Important examples of applications are displays and optical phase modulators. We report on subwavelength periodic structuring and precise laser cutting of 150 nm thick indium-tin-oxide films on glass substrates, which were deposited by magnetron reactive DC-sputtering from an indiumtin target in a low-pressure oxygen atmosphere. In order to obtain nanostructured electrodes laser-induced periodic surface structures with a period of approximately 100 nm were generated using tightly focused high-repetition rate sub-15 femtosecond pulsed Ti:sapphire laser light, which was scanned across the sample by galvanometric mirrors. Three-dimensional spacers were produced by multiphoton photopolymerization in ma-N 2410 negative-tone photoresist spin-coated on top of the ITO layers. The nanostructured electrodes were aligned in parallel to set up an electrically switchable nematic liquid crystal cell.

Influence of Cu Content on the Microstructure and Mechanical Properties of Cr-Cu-N Coatings

PubMed Central

Ding, Ji Cheng; Zhang, Teng Fei; Wan, Zhi Xin; Mei, Hai Juan; Kang, Myung Chang

2018-01-01

The Cr-Cu-N coatings with various Cu contents (0–25.18 (±0.17) at.%) were deposited on Si wafer and stainless steel (SUS 304) substrates in reactive Ar+N2 gas mixture by a hybrid coating system combining pulsed DC and RF magnetron sputtering techniques. The influence of Cu content on the coating composition, microstructure, and mechanical properties was investigated. The microstructure of the coatings was significantly altered by the introduction of Cu. The deposited coatings exhibit solid solution structure with different compositions in all of the samples. Addition of Cu is intensively favored for preferred orientation growth along (200) direction by restricting in (111) direction. With increasing Cu content, the surface and cross-sectional morphology of coatings were changed from triangle cone-shaped, columnar feature to broccoli-like and compact glassy microstructure, respectively. The mechanical properties including the residual stress, nanohardness, and toughness of the coatings were explored on the basis of Cu content. The highest hardness was obtained at the Cu content of 1.49 (±0.10) at.%. PMID:29552269

Influence of Cu Content on the Microstructure and Mechanical Properties of Cr-Cu-N Coatings.

PubMed

Ding, Ji Cheng; Zhang, Teng Fei; Wan, Zhi Xin; Mei, Hai Juan; Kang, Myung Chang; Wang, Qi Min; Kim, Kwang Ho

2018-01-01

The Cr-Cu-N coatings with various Cu contents (0-25.18 (±0.17) at.%) were deposited on Si wafer and stainless steel (SUS 304) substrates in reactive Ar+N 2 gas mixture by a hybrid coating system combining pulsed DC and RF magnetron sputtering techniques. The influence of Cu content on the coating composition, microstructure, and mechanical properties was investigated. The microstructure of the coatings was significantly altered by the introduction of Cu. The deposited coatings exhibit solid solution structure with different compositions in all of the samples. Addition of Cu is intensively favored for preferred orientation growth along (200) direction by restricting in (111) direction. With increasing Cu content, the surface and cross-sectional morphology of coatings were changed from triangle cone-shaped, columnar feature to broccoli-like and compact glassy microstructure, respectively. The mechanical properties including the residual stress, nanohardness, and toughness of the coatings were explored on the basis of Cu content. The highest hardness was obtained at the Cu content of 1.49 (±0.10) at.%.

Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.

2015-11-15

This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasmamore » in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.« less

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

Pulse transducer with artifact signal attenuator. [heart rate sensors

NASA Technical Reports Server (NTRS)

Cash, W. H., Jr.; Polhemus, J. T. (Inventor)

1980-01-01

An artifact signal attenuator for a pulse rate sensor is described. The circuit for attenuating background noise signals is connected with a pulse rate transducer which has a light source and a detector for light reflected from blood vessels of a living body. The heart signal provided consists of a modulated dc signal voltage indicative of pulse rate. The artifact signal resulting from light reflected from the skin of the body comprises both a constant dc signal voltage and a modulated dc signal voltage. The amplitude of the artifact signal is greater and the frequency less than that of the heart signal. The signal attenuator circuit includes an operational amplifier for canceling the artifact signal from the output signal of the transducer and has the capability of meeting packaging requirements for wrist-watch-size packages.

The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

2011-12-01

Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

Design of a -1 MV dc UHV power supply for ITER NBI

NASA Astrophysics Data System (ADS)

Watanabe, K.; Yamamoto, M.; Takemoto, J.; Yamashita, Y.; Dairaku, M.; Kashiwagi, M.; Taniguchi, M.; Tobari, H.; Umeda, N.; Sakamoto, K.; Inoue, T.

2009-05-01

Procurement of a dc -1 MV power supply system for the ITER neutral beam injector (NBI) is shared by Japan and the EU. The Japan Atomic Energy Agency as the Japan Domestic Agency (JADA) for ITER contributes to the procurement of dc -1 MV ultra-high voltage (UHV) components such as a dc -1 MV generator, a transmission line and a -1 MV insulating transformer for the ITER NBI power supply. The inverter frequency of 150 Hz in the -1 MV power supply and major circuit parameters have been proposed and adopted in the ITER NBI. The dc UHV insulation has been carefully designed since dc long pulse insulation is quite different from conventional ac insulation or dc short pulse systems. A multi-layer insulation structure of the transformer for a long pulse up to 3600 s has been designed with electric field simulation. Based on the simulation the overall dimensions of the dc UHV components have been finalized. A surge energy suppression system is also essential to protect the accelerator from electric breakdowns. The JADA contributes to provide an effective surge suppression system composed of core snubbers and resistors. Input energy into the accelerator from the power supply can be reduced to about 20 J, which satisfies the design criteria of 50 J in total in the case of breakdown at -1 MV.

DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application

NASA Astrophysics Data System (ADS)

Tsai, Jui-Hsuan; Cheng, I.-Chun; Hsu, Cheng-Che; Chen, Jian-Zhang

2018-01-01

Nitrogen DC-pulse atmospheric-pressure plasma jet (APPJ) and nitrogen dielectric barrier discharge (DBD) were applied to pre-treat fluorine-doped tin oxide (FTO) glass substrates for perovskite solar cells (PSCs). Nitrogen DC-pulse APPJ treatment (substrate temperature: ~400 °C) for 10 s can effectively increase the wettability, whereas nitrogen DBD treatment (maximum substrate temperature: ~140 °C) achieved limited improvement in wettability even with increased treatment time of 60 s. XPS results indicate that 10 s APPJ, 60 s DBD, and 15 min UV-ozone treatment of FTO glass substrates can decontaminate the surface. A PSC fabricated on APPJ-treated FTO showed the highest power conversion efficiency (PCE) of 14.90%; by contrast, a PSC with nitrogen DBD-treated FTO shows slightly lower PCE of 12.57% which was comparable to that of a PSC on FTO treated by a 15 min UV-ozone process. Both nitrogen DC-pulse APPJ and nitrogen DBD can decontaminate FTO substrates and can be applied for the substrate cleaning step of PSC.

On the use of response surface methodology to predict and interpret the preferred c-axis orientation of sputtered AlN thin films

NASA Astrophysics Data System (ADS)

Adamczyk, J.; Horny, N.; Tricoteaux, A.; Jouan, P.-Y.; Zadam, M.

2008-01-01

This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) substrates. The preferred orientation was evaluated using a conventional Bragg-Brentano X-ray diffractometer ( θ-2 θ) with the CuKα radiation. We have first determined the experimental domain for 3 parameters: sputtering pressure (2-6 mTorr), discharge current (312-438 mA) and nitrogen percentage (17-33%). For the setup of the experimental design we have used a three factors Doehlert matrix which allows the use of the statistical response surface methodology (RSM) in a spherical domain. A four dimensional surface response, which represents the (0 0 0 2) peak height as a function of sputtering pressure, discharge current and nitrogen percentage, was obtained. It has been found that the main interaction affecting the preferential c-axis orientation was the pressure-nitrogen percentage interaction. It has been proved that a Box-Cox transformation is a very useful method to interpret and discuss the experimental results and leads to predictions in good agreement with experiments.

MBE of (Hg,Cd)Te

DTIC Science & Technology

1988-10-01

deterioration in the CdTe and the nucleation and growth of 1InSb. It is possible that broadening of the interface profile is I caused by nonuniform sputtering...Night W4alon and EAo-Optbca Ft & lWir , VA 22060 #Condensed atteer & Radiation Branch, U.S. Navel Research Laboratory. Washington, D.C. 20375 * t

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Synthesis and Characterization of Molybdenum (Mo) Thin Films Using DC-Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Pandharkar, Subhash M.; Rondiya, Sachin R.; Rokade, Avinash V.; Gabhale, Bharat B.; Pathan, Habib M.; Jadkar, Sandesh R.

2018-03-01

In present work, we report synthesis of Mo thin films by DC-magnetron sputtering method. The structural, optical, morphological and electrical properties were investigated as a function of target-to-substrate distance. From the results, it is evident that with increase in target-to-substrate distance the thickness of films decreases while its sheet resistance and electrical resistivity increases, which is confirmed by van der Pauw method. Low angle XRD analysis revealed that with increase in target-to-substrate distance preferred orientation of Mo crystallites changes from (211) to (110) and its size decreases. The FE-SEM analysis revealed a significant change in surface morphology with increase in target-to-substrate distance. UV-Visible spectroscopy analysis showed that Mo films deposited at high target-to-substrate distance have more reflection than those deposited at lower target-to-substrate. Finally, adhesion test was performed using scotch hatch tape adhesion test which show all Mo films have excellent adhesion over the entire range of target-to-substrate distance studied. The employment of such Mo films as back contact can be useful to improve efficiency of CZTS solar cells.

Study of vanadium doped ZnO films prepared by dc reactive magnetron sputtering at different substrate temperatures.

PubMed

Meng, Lijian; Teixeira, Vasco; Dos Santos, M P

2013-02-01

ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT-500 degrees C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 degrees C, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 degrees C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

PubMed

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

PubMed

Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

2018-02-01

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryanto, Didik, E-mail: didi027@lipi.go.id; Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah; Marwoto, Putut

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtainedmore » at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.« less

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

NASA Astrophysics Data System (ADS)

Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

2018-03-01

We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

NASA Technical Reports Server (NTRS)

Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

1995-01-01

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

High-efficiency, thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.; Rajakarunanayake, Y.

1995-08-01

This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

Numerical simulation of Trichel pulses of negative DC corona discharge based on a plasma chemical model

NASA Astrophysics Data System (ADS)

Chen, Xiaoyue; Lan, Lei; Lu, Hailiang; Wang, Yu; Wen, Xishan; Du, Xinyu; He, Wangling

2017-10-01

A numerical simulation method of negative direct current (DC) corona discharge based on a plasma chemical model is presented, and a coaxial cylindrical gap is adopted. There were 15 particle species and 61 kinds of collision reactions electrons involved, and 22 kinds of reactions between ions are considered in plasma chemical reactions. Based on this method, continuous Trichel pulses are calculated on about a 100 us timescale, and microcosmic physicochemical process of negative DC corona discharge in three different periods is discussed. The obtained results show that the amplitude of Trichel pulses is between 1-2 mA, and that pulse interval is in the order of 10-5 s. The positive ions produced by avalanche ionization enhanced the electric field near the cathode at the beginning of the pulse, then disappeared from the surface of cathode. The electric field decreases and the pulse ceases to develop. The negative ions produced by attachment slowly move away from the cathode, and the electric field increases gradually until the next pulse begins to develop. The positive and negative ions with the highest density during the corona discharge process are O4+ and O3- , respectively.

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

The Pulsed Cylindrical Magnetron for Deposition

NASA Astrophysics Data System (ADS)

Korenev, Sergey

2012-10-01

The magnetron sputtering deposition of films and coatings broadly uses in microelectronics, material science, environmental applications and etc. The rate of target evaporation and time for deposition of films and coatings depends on magnetic field. These parameters link with efficiency of gas molecules ionization by electrons. The cylindrical magnetrons use for deposition of films and coatings on inside of pipes for different protective films and coatings in oil, chemical, environmental applications. The classical forming of magnetic field by permanent magnets or coils for big and long cylindrical magnetrons is complicated. The new concept of pulsed cylindrical magnetron for high rate deposition of films and coating for big and long pipes is presented in this paper. The proposed cylindrical magnetron has azimuthally pulsed high magnetic field, which allows forming the high ionized plasma and receiving high rate of evaporation material of target (central electrode). The structure of proposed pulsed cylindrical magnetron sputtering system is given. The main requirements to deposition system are presented. The preliminary data for forming of plasma and deposition of Ta films and coatings on the metal pipers are discussed. The comparison of classical and proposed cylindrical magnetrons is given. The analysis of potential applications is considered.

Mixed-mode high-power impulse magnetron sputter deposition of tetrahedral amorphous carbon with pulse-length control of ionization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, M. D.; Marks, N. A.; Ganesan, R.

2016-04-21

High-power impulse magnetron sputtering (HiPIMS) is used to deposit amorphous carbon thin films with sp{sup 3} fractions of 13% to 82%. Increasing the pulse length results in a transition from conventional HiPIMS deposition to a “mixed-mode” in which an arc triggers on the target surface, resulting in a large flux of carbon ions. The films are characterized using X-ray photoelectron spectroscopy, Raman spectroscopy, ellipsometry, nanoindentation, elastic recoil detection analysis, and measurements of stress and contact angle. All properties vary in a consistent manner, showing a high tetrahedral character only for long pulses, demonstrating that mixed-mode deposition is the source ofmore » the high carbon ion flux. Varying the substrate bias reveals an “energy window” effect, where the sp{sup 3} fraction of the films is greatest for a substrate bias around −100 V and decreases for higher or lower bias values. In the absence of bias, the films' properties show little dependence on the pulse length, showing that energetic ions are the origin of the highly tetrahedral character.« less

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeO x) Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Neil R.; Grant, J. T.; Sun, L.

2014-03-18

Germanium oxide (GeO x) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O 2/(Ar + O 2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO 2 and then finally to GeO 2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeO x films grown were amorphous. The opticalmore » properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeO x films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO 2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO 2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeO x films is presented and discussed.« less

TNF-α and Tumor Lysate Promote the Maturation of Dendritic Cells for Immunotherapy for Advanced Malignant Bone and Soft Tissue Tumors

PubMed Central

Miwa, Shinji; Nishida, Hideji; Tanzawa, Yoshikazu; Takata, Munetomo; Takeuchi, Akihiko; Yamamoto, Norio; Shirai, Toshiharu; Hayashi, Katsuhiro; Kimura, Hiroaki; Igarashi, Kentaro; Mizukoshi, Eishiro; Nakamoto, Yasunari; Kaneko, Shuichi; Tsuchiya, Hiroyuki

2012-01-01

Background Dendritic cells (DCs) play a pivotal role in the immune system. There are many reports concerning DC-based immunotherapy. The differentiation and maturation of DCs is a critical part of DC-based immunotherapy. We investigated the differentiation and maturation of DCs in response to various stimuli. Methods Thirty-one patients with malignant bone and soft tissue tumors were enrolled in this study. All the patients had metastatic tumors and/or recurrent tumors. Peripheral blood mononuclear cells (PBMCs) were suspended in media containing interleukin-4 (IL-4) and granulocyte-macrophage colony stimulating factor (GM-CSF). These cells were then treated with or without 1) tumor lysate (TL), 2) TL + TNF-α, 3) OK-432. The generated DCs were mixed and injected in the inguinal or axillary region. Treatment courses were performed every week and repeated 6 times. A portion of the cells were analyzed by flow cytometry to determine the degree of differentiation and maturation of the DCs. Serum IFN-γ and serum IL-12 were measured in order to determine the immune response following the DC-based immunotherapy. Results Approximately 50% of PBMCs differentiated into DCs. Maturation of the lysate-pulsed DCs was slightly increased. Maturation of the TL/TNF-α-pulsed DCs was increased, commensurate with OK-432-pulsed DCs. Serum IFN-γ and serum IL-12 showed significant elevation at one and three months after DC-based immunotherapy. Conclusions Although TL-pulsed DCs exhibit tumor specific immunity, TL-pulsed cells showed low levels of maturation. Conversely, the TL/TNF-α-pulsed DCs showed remarkable maturation. The combination of IL-4/GM-CSF/TL/TNF-α resulted in the greatest differentiation and maturation for DC-based immunotherapy for patients with bone and soft tissue tumors. PMID:23300824

Migration of cell surface concanavalin A receptors in pulsed electric fields.

PubMed Central

Lin-Liu, S; Adey, W R; Poo, M M

1984-01-01

Concanavalin A (con A) receptors on the surface of cultured Xenopus myoblasts redistributed in response to monopolar, pulsed electric fields. The prefield uniform distribution of the receptors became asymmetrical, and was polarized toward the cathodal pole, in the same way as in DC fields. The extent of asymmetry depended on the duration of field exposure, pulse width (or alternatively, interpulse interval), frequency, and intensity. This relationship was most conveniently expressed by using duty cycle, a quantity determined by both pulse width and frequency. Pulses of average intensity 1.5 V/cm induced detectable asymmetry within 5 min. At the lowest average field intensity used, 0.8 V/cm, significant asymmetry was detected at 150 min. For pulses of high duty cycle (greater than 25%), steady state was reached after 30 min exposure and the steady state asymmetry was dependent on average field intensity. For low duty cycle fields, the time required to reach steady state was prolonged (greater than 50 min). Before reaching a steady state, effectiveness of the pulses, as compared with DC fields of equivalent intensity, was a function of duty cycle. A low duty cycle field (fixed number of pulses at low frequency or long interpulse interval) was less effective than high duty cycle fields or DC. PMID:6743751

ZrO{sub 2}-ZnO composite thin films for humidity sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C.

2016-05-23

ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

Clock Controller For Ac Self-Timing Analysis Of Logic System

DOEpatents

Lo, Tinchee; Flanagan, John D.

2004-05-18

A clock controller and clock generating method are provided for AC self-test timing analysis of a logic system. The controller includes latch circuitry which receives a DC input signal at a data input, and a pair of continuous out-of-phase clock signals at capture and launch clock inputs thereof. The latch circuitry outputs two overlapping pulses responsive to the DC input signal going high. The two overlapping pulses are provided to waveform shaper circuitry which produces therefrom two non-overlapping pulses at clock speed of the logic system to be tested. The two non-overlapping pulses are a single pair of clock pulses which facilitate AC self-test timing analysis of the logic system.

Measurements and Modelling of Sputtering Rates with Low Energy Ions

NASA Astrophysics Data System (ADS)

Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

1996-10-01

The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

Surface LAMP-2 Is an Endocytic Receptor That Diverts Antigen Internalized by Human Dendritic Cells into Highly Immunogenic Exosomes.

PubMed

Leone, Dario Armando; Peschel, Andrea; Brown, Markus; Schachner, Helga; Ball, Miriam J; Gyuraszova, Marianna; Salzer-Muhar, Ulrike; Fukuda, Minoru; Vizzardelli, Caterina; Bohle, Barbara; Rees, Andrew J; Kain, Renate

2017-07-15

The lysosome-associated membrane protein (LAMP) family includes the dendritic cell endocytic receptors DC-LAMP and CD68, as well as LAMP-1 and LAMP-2. In this study we identify LAMP-1 (CD107a) and LAMP-2 (CD107b) on the surface of human monocyte-derived dendritic cells (MoDC) and show only LAMP-2 is internalized after ligation by specific Abs, including H4B4, and traffics rapidly but transiently to the MHC class II loading compartment, as does Ag conjugated to H4B4. However, pulsing MoDC with conjugates of primary (keyhole limpet hemocyanin; KLH) and recall (Bet v 1) Ags (H4B4*KLH and H4B4*Bet v 1) induced significantly less CD4 cell proliferation than pulsing with native Ag or Ag conjugated to control mAb (ISO*KLH and ISO*Bet v 1). In H4B4*KLH-pulsed MoDC, the duration of KLH residence in MHC class II loading compartments was significantly reduced, as were surface HLA-DR and DR-bound KLH-derived peptides. Paradoxically, MoDC pulsed with H4B4*KLH, but not the other KLH preparations, induced robust proliferation of CD4 cells separated from them by a transwell membrane, indicating factors in the supernatant were responsible. Furthermore, extracellular vesicles from supernatants of H4B4*KLH-pulsed MoDC contained significantly more HLA-DR and KLH than those purified from control MoDC, and KLH was concentrated specifically in exosomes that were a uniquely effective source of Ag in standard T cell proliferation assays. In summary, we identify LAMP-2 as an endocytic receptor on human MoDC that routes cargo into unusual Ag processing pathways, which reduces surface expression of Ag-derived peptides while selectively enriching Ag within immunogenic exosomes. This novel pathway has implications for the initiation of immune responses both locally and at distant sites. Copyright © 2017 by The American Association of Immunologists, Inc.

Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

NASA Technical Reports Server (NTRS)

Gruber, Robert P.; Gott, Robert W.

1991-01-01

In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

Influence of nitrogen admixture to argon on the ion energy distribution in reactive high power pulsed magnetron sputtering of chromium

NASA Astrophysics Data System (ADS)

Breilmann, W.; Maszl, C.; Hecimovic, A.; von Keudell, A.

2017-04-01

Reactive high power impulse magnetron sputtering (HiPIMS) of metals is of paramount importance for the deposition of various oxides, nitrides and carbides. The addition of a reactive gas such as nitrogen to an argon HiPIMS plasma with a metal target allows the formation of the corresponding metal nitride on the substrate. The addition of a reactive gas introduces new dynamics into the plasma process, such as hysteresis, target poisoning and the rarefaction of two different plasma gases. We investigate the dynamics for the deposition of chromium nitride by a reactive HiPIMS plasma using energy- and time-resolved ion mass spectrometry, fast camera measurements and temporal and spatially resolved optical emission spectroscopy. It is shown that the addition of nitrogen to the argon plasma gas significantly changes the appearance of the localized ionization zones, the so-called spokes, in HiPIMS plasmas. In addition, a very strong modulation of the metal ion flux within each HiPIMS pulse is observed, with the metal ion flux being strongly suppressed and the nitrogen molecular ion flux being strongly enhanced in the high current phase of the pulse. This behavior is explained by a stronger return effect of the sputtered metal ions in the dense plasma above the racetrack. This is best observed in a pure nitrogen plasma, because the ionization zones are mostly confined, implying a very high local plasma density and consequently also an efficient scattering process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro

Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related tomore » the interfacial stress developed on cooling from deposition temperature.« less

Lithium diffusion in sputter-deposited Li4Ti5O12 thin films

NASA Astrophysics Data System (ADS)

Wunde, F.; Berkemeier, F.; Schmitz, G.

2012-10-01

Li4Ti5O12 (LTO) thin films are deposited by dc-ion beam sputtering at different oxygen partial pressures and different substrate temperatures. In order to investigate, how these two parameters influence the atomic structure, the specimens are characterized by X-ray diffraction and transmission electron microscopy. Electrochemical characterization of the films is done by cyclic voltammetry and chrono-potentiometry. To determine an averaged chemical diffusion coefficient of lithium, a method is developed, evaluating c-rate tests. The results obtained by this method are compared to results obtained by the well established galvanostatic intermittent titration technique (GITT), which is used to determine a concentration dependent diffusion coefficient of lithium in LTO.

Coatings for wear and lubrication

NASA Technical Reports Server (NTRS)

Spalvins, T.

1978-01-01

Recent advances in the tribological uses of rf-sputtered and ion plated films of solid film lubricants (laminar solids, soft metals, organic polymers) and wear resistant refractory compounds (carbides, nitrides, silicides) are reviewed. The sputtering and ion plating potentials and the corresponding coatings formed were evaluated relative to the friction coefficient, wear endurance life and mechanical properties. The tribological and mechanical properties for each kind of film are discussed in terms of film adherence, coherence, density, grain size, morphology, internal stresses, thickness, and substrate conditions such as temperature, topography, chemistry and dc-biasing. The ion plated metallic films in addition to improved tribological properties also have better mechanical properties such as tensile strength and fatigue life.

Inactivation of bacteria under visible light and in the dark by Cu films. Advantages of Cu-HIPIMS-sputtered films.

PubMed

Ehiasarian, A; Pulgarin, Cesar; Kiwi, John

2012-11-01

The Cu polyester thin-sputtered layers on textile fabrics show an acceptable bacterial inactivation kinetics using sputtering methods. Direct current magnetron sputtering (DCMS) for 40 s of Cu on cotton inactivated Escherichia coli within 30 min under visible light and within 120 min in the dark. For a longer DCMS time of 180 s, the Cu content was 0.294% w/w, but the bacterial inactivation kinetics under light was observed within 30 min, as was the case for the 40-s sputtered sample. This observation suggests that Cu ionic species play a key role in the E. coli inactivation and these species were further identified by X-ray photoelectron spectroscopy (XPS). The 40-s sputtered samples present the highest amount of Cu sites held in exposed positions interacting on the cotton with E. coli. Cu DC magnetron sputtering leads to thin metallic semi-transparent gray-brown Cu coating composed by Cu nanoparticulate in the nanometer range as found by electron microscopy (EM). Cu cotton fabrics were also functionalized by bipolar asymmetric DCMSP. Sputtering by DCMS and DCMSP for longer times lead to darker and more compact Cu films as detected by diffuse reflectance spectroscopy and EM. Cu is deposited on the polyester in the form of Cu(2)O and CuO as quantified by XPS. The redox interfacial reactions during bacterial inactivation involve changes in the Cu oxidation states and in the oxidation intermediates and were followed by XPS. High-power impulse magnetron sputtering (HIPIMS)-sputtered films show a low rugosity indicating that the texture of the Cu nanoparticulate films were smooth. The values of R (q) and R (a) were similar before and after the E. coli inactivation providing evidence for the stability of the HIPIMS-deposited Cu films. The Cu loading percentage required in the Cu films sputtered by HIPIMS to inactivate E. coli was about three times lower compared to DCMS films. This indicates a substantial Cu metal savings within the preparation of antibacterial films.

Depth elemental characterization of 1D self-aligned TiO2 nanotubes using calibrated radio frequency glow discharge optical emission spectroscopy (GDOES)

NASA Astrophysics Data System (ADS)

Mohajernia, Shiva; Mazare, Anca; Hwang, Imgon; Gaiaschi, Sofia; Chapon, Patrick; Hildebrand, Helga; Schmuki, Patrik

2018-06-01

In this work we study the depth composition of anodic TiO2 nanotube layers. We use elemental depth profiling with Glow Discharge Optical Emission Spectroscopy and calibrate the results of this technique with X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). We establish optimized sputtering conditions for nanotubular structures using the pulsed RF mode, which causes minimized structural damage during the depth profiling of the nanotubular structures. This allows to obtain calibrated sputter rates that account for the nanotubular "porous" morphology. Most importantly, sputter-artifact free compositional profiles of these high aspect ratio 3D structures are obtained, as well as, in combination with SEM, elegant depth sectional imaging.

OH radicals generated by DC corona discharge for improving the pulsed discharge desulfuration efficiency.

PubMed

Li, Jie; Li, Guo-feng; Wu, Yan; Wang, Ning-hui; Huang, Qiu-nan

2004-01-01

Positive DC corona discharge is formed with needle-plate electrode configuration, in which the water vapor is ejected though the needle points. The purpose is to increase the numbers of the water-based radicals, ionize the water molecule and improve the desulfuration efficiency of pulsed corona reactor. The water ions were determined by four stages molecular beam mass spectrometer and diagnose the water-based radicals by emission spectrograph. A conclusion on formation of ions and radicals with DC corona discharges can be drawn.

Physical Vapor Deposition of Thin Films

NASA Astrophysics Data System (ADS)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Method for exciting inductive-resistive loads with high and controllable direct current

DOEpatents

Hill, Jr., Homer M.

1976-01-01

Apparatus and method for transmitting dc power to a load circuit by applying a dc voltage from a standard waveform synthesizer to duration modulate a bipolar rectangular wave generator. As the amplitude of the dc voltage increases, the widths of the rectangular wave generator output pulses increase, and as the amplitude of the dc voltage decreases, the widths of the rectangular wave generator output pulses decrease. Thus, the waveform synthesizer selectively changes the durations of the rectangular wave generator bipolar output pulses so as to produce a rectangular wave ac carrier that is duration modulated in accordance with and in direct proportion to the voltage amplitude from the synthesizer. Thereupon, by transferring the carrier to the load circuit through an amplifier and a rectifier, the load current also corresponds directly to the voltage amplitude from the synthesizer. To this end, the rectified wave at less than 100% duty factor, amounts to a doubled frequency direct voltage pulse train for applying a direct current to the load, while the current ripple is minimized by a high L/R in the load circuit. In one embodiment, a power transmitting power amplifier means having a dc power supply is matched to the load circuit through a transformer for current magnification without sacrificing load current duration capability, while negative voltage and current feedback are provided in order to insure good output fidelity.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament.

PubMed

Ueno, A; Oguri, H; Ikegami, K; Namekawa, Y; Ohkoshi, K; Tokuchi, A

2010-02-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB(6)) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 microH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 A x 140 V) and a duty factor of more than 1.5% (600 micros x 25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H(-) ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 micros and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

NASA Astrophysics Data System (ADS)

Jeong, Jin-A.; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

2010-11-01

We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/squ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

UV and IR laser radiation's interaction with metal film and teflon surfaces

NASA Astrophysics Data System (ADS)

Fedenev, A. V.; Alekseev, S. B.; Goncharenko, I. M.; Koval', N. N.; Lipatov, E. I.; Orlovskii, V. M.; Shulepov, M. A.; Tarasenko, V. F.

2003-04-01

The interaction of Xe ([lambda] [similar] 1.73 [mu]m) and XeCl (0.308 [mu]m) laser radiation with surfaces of metal and TiN-ceramic coatings on glass and steel substrates has been studied. Correlation between parameters of surface erosion versus laser-specific energy was investigated. Monitoring of laser-induced erosion on smooth polished surfaces was performed using optical microscopy. The correlation has been revealed between characteristic zones of thin coatings damaged by irradiation and energy distribution over the laser beam cross section allowing evaluation of defects and adhesion of coatings. The interaction of pulsed periodical CO2 ([lambda] [similar] 10.6 [mu]m), and Xe ([lambda] [similar] 1.73 [mu]m) laser radiation with surfaces of teflon (polytetrafluoroethylene—PTFE) has been studied. Monitoring of erosion track on surfaces was performed through optical microscopy. It has been shown that at pulsed periodical CO2-radiation interaction with teflon the sputtering of polymer with formation of submicron-size particles occurs. Dependencies of particle sizes, form, and sputtering velocity on laser pulse duration and target temperature have been obtained.

Laser-guided energetic discharges over large air gaps by electric-field enhanced plasma filaments

NASA Astrophysics Data System (ADS)

Théberge, Francis; Daigle, Jean-François; Kieffer, Jean-Claude; Vidal, François; Châteauneuf, Marc

2017-01-01

Recent works on plasma channels produced during the propagation of ultrashort and intense laser pulses in air demonstrated the guiding of electric discharges along the laser path. However, the short plasma lifetime limits the length of the laser-guided discharge. In this paper, the conductivity and lifetime of long plasma channels produced by ultrashort laser pulses is enhanced efficiently over many orders of magnitude by the electric field of a hybrid AC-DC high-voltage source. The AC electric pulse from a Tesla coil allowed to stimulate and maintain the highly conductive channel during few milliseconds in order to guide a subsequent 500 times more energetic discharge from a 30-kV DC source. This DC discharge was laser-guided over an air gap length of two metres, which is more than two orders of magnitude longer than the expected natural discharge length. Long plasma channel induced by laser pulses and stimulated by an external high-voltage source opens the way for wireless and efficient transportation of energetic current pulses over long air gaps and potentially for guiding lightning.

Laser-guided energetic discharges over large air gaps by electric-field enhanced plasma filaments

PubMed Central

Théberge, Francis; Daigle, Jean-François; Kieffer, Jean-Claude; Vidal, François; Châteauneuf , Marc

2017-01-01

Recent works on plasma channels produced during the propagation of ultrashort and intense laser pulses in air demonstrated the guiding of electric discharges along the laser path. However, the short plasma lifetime limits the length of the laser-guided discharge. In this paper, the conductivity and lifetime of long plasma channels produced by ultrashort laser pulses is enhanced efficiently over many orders of magnitude by the electric field of a hybrid AC-DC high-voltage source. The AC electric pulse from a Tesla coil allowed to stimulate and maintain the highly conductive channel during few milliseconds in order to guide a subsequent 500 times more energetic discharge from a 30-kV DC source. This DC discharge was laser-guided over an air gap length of two metres, which is more than two orders of magnitude longer than the expected natural discharge length. Long plasma channel induced by laser pulses and stimulated by an external high-voltage source opens the way for wireless and efficient transportation of energetic current pulses over long air gaps and potentially for guiding lightning. PMID:28053312

Reduced atomic shadowing in HiPIMS: Role of the thermalized metal ions

NASA Astrophysics Data System (ADS)

Oliveira, João Carlos; Ferreira, Fábio; Anders, André; Cavaleiro, Albano

2018-03-01

In magnetron sputtering, the ability to tailor film properties depends primarily on the control of the flux of particles impinging on the growing film. Among deposition mechanisms, the shadowing effect leads to the formation of a rough surface and a porous, columnar microstructure. Re-sputtered species may be re-deposited in the valleys of the films surface and thereby contribute to a reduction of roughness and to fill the underdense regions. Both effects are non-local and they directly compete to shape the final properties of the deposited films. Additional control of the bombarding flux can be obtained by ionizing the sputtered flux, because ions can be controlled with respect to their energy and impinging direction, such as in High-Power Impulse Magnetron Sputtering (HiPIMS). In this work, the relation between ionization of the sputtered species and thin film properties is investigated in order to identify the mechanisms which effectively influence the shadowing effect in Deep Oscillation Magnetron Sputtering (DOMS), a variant of HiPIMS. The properties of two Cr films deposited using the same averaged target power by d.c. magnetron sputtering and DOMS have been compared. Additionally, the angle distribution of the Cr species impinging on the substrate was simulated using Monte Carlo-based programs while the energy distribution of the energetic particles bombarding the substrate was evaluated by energy-resolved mass analysis. It was found that the acceleration of the thermalized chromium ions at the substrate sheath in DOMS significantly reduces the high angle component of their impinging angle distribution and, thus, efficiently reduces atomic shadowing. Therefore, a high degree of ionization in HiPIMS results in almost shadowing effect-free film deposition and allows us to deposit dense and compact films without the need of high energy particle bombardment during growth.

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.

1993-01-01

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

RBS, XRR and optical reflectivity measurements of Ti-TiO{sub 2} thin films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drogowska, K.; Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstrasse 23, 64287 Darmstadt; Tarnawski, Z., E-mail: tarnawsk@agh.edu.pl

2012-02-15

Highlights: Black-Right-Pointing-Pointer The single-, bi- and tri-layered films of Ti-TiO{sub 2} deposited onto Si(1 1 1) substrates. Black-Right-Pointing-Pointer Three methods RBS, XRR, optical reflectometer were used. Black-Right-Pointing-Pointer The real thickness of each layer was smaller than 50 nm. Black-Right-Pointing-Pointer Ti and TiO{sub 2} film-densities were slightly lower than the corresponding bulk values. -- Abstract: Single-, bi- and tri-layered films of Ti-TiO{sub 2} system were deposited by d.c. pulsed magnetron sputtering from metallic Ti target in an inert Ar or reactive Ar + O{sub 2} atmosphere. The nominal thickness of each layer was 50 nm. The chemical composition and its depthmore » profile were determined by Rutherford backscattering spectroscopy (RBS). Crystallographic structure was analysed by means of X-ray diffraction (XRD) at glancing incidence. X-ray reflectometry (XRR) was used as a complementary method for the film thickness and density evaluation. Modelling of the optical reflectivity spectra of Ti-TiO{sub 2} thin films deposited onto Si(1 1 1) substrates provided an independent estimate of the layer thickness. The combined analysis of RBS, XRR and reflectivity spectra indicated the real thickness of each layer less than 50 nm with TiO{sub 2} film density slightly lower than the corresponding bulk value. Scanning Electron Microscopy (SEM) cross-sectional images revealed the columnar growth of TiO{sub 2} layers. Thickness estimated directly from SEM studies was found to be in a good agreement with the results of RBS, XRR and reflectivity spectra.« less

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Spoke rotation reversal in magnetron discharges of aluminium, chromium and titanium

NASA Astrophysics Data System (ADS)

Hecimovic, A.; Maszl, C.; Schulz-von der Gathen, V.; Böke, M.; von Keudell, A.

2016-06-01

The rotation of localised ionisation zones, i.e. spokes, in magnetron discharge are frequently observed. The spokes are investigated by measuring floating potential oscillations with 12 flat probes placed azimuthally around a planar circular magnetron. The 12-probe setup provides sufficient temporal and spatial resolution to observe the properties of various spokes, such as rotation direction, mode number and angular velocity. The spokes are investigated as a function of discharge current, ranging from 10 mA (current density 0.5 mA cm-2) to 140 A (7 A cm-2). In the range from 10 mA to 600 mA the plasma was sustained in DC mode, and in the range from 1 A to 140 A the plasma was pulsed in high-power impulse magnetron sputtering mode. The presence of spokes throughout the complete discharge current range indicates that the spokes are an intrinsic property of a magnetron sputtering plasma discharge. The spokes may disappear at discharge currents above 80 A for Cr, as the plasma becomes homogeneously distributed over the racetrack. Up to discharge currents of several amperes (the exact value depends on the target material), the spokes rotate in a retrograde \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 0.2-4 km s-1. Beyond a discharge current of several amperes, the spokes rotate in a \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 5-15 km s-1. The spoke rotation reversal is explained by a transition from Ar-dominated to metal-dominated sputtering that shifts the plasma emission zone closer to the target. The spoke itself corresponds to a region of high electron density and therefore to a hump in the electrical potential. The electric field around the spoke dominates the spoke rotation direction. At low power, the plasma is further away from the target and it is dominated by the electric field to the anode, thus retrograde \\mathbf{E}× \\mathbf{B} rotation. At high power, the plasma is closer to the target and it is dominated by the electric field pointing to the target, thus \\mathbf{E}× \\mathbf{B} rotation.

256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser

NASA Astrophysics Data System (ADS)

Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang

2017-12-01

We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

Towards Terawatt Sub-Cycle Long-Wave Infrared Pulses via Chirped Optical Parametric Amplification and Indirect Pulse Shaping

PubMed Central

Yin, Yanchun; Chew, Andrew; Ren, Xiaoming; Li, Jie; Wang, Yang; Wu, Yi; Chang, Zenghu

2017-01-01

We present an approach for both efficient generation and amplification of 4–12 μm pulses by tailoring the phase matching of the nonlinear crystal Zinc Germanium Phosphide (ZGP) in a narrowband-pumped optical parametric chirped pulse amplifier (OPCPA) and a broadband-pumped dual-chirped optical parametric amplifier (DC-OPA), respectively. Preliminary experimental results are obtained for generating 1.8–4.2 μm super broadband spectra, which can be used to seed both the signal of the OPCPA and the pump of the DC-OPA. The theoretical pump-to-idler conversion efficiency reaches 27% in the DC-OPA pumped by a chirped broadband Cr2+:ZnSe/ZnS laser, enabling the generation of  Terawatt-level 4–12 μm pulses with an available large-aperture ZGP. Furthermore, the 4–12 μm idler pulses can be compressed to sub-cycle pulses by compensating the tailored positive chirp of the idler pulses using the bulk compressor NaCl, and by indirectly controlling the higher-order idler phase through tuning the signal (2.4–4.0 μm) phase with a commercially available acousto-optic programmable dispersive filter (AOPDF). A similar approach is also described for generating high-energy 4–12 μm sub-cycle pulses via OPCPA pumped by a 2 μm Ho:YLF laser. PMID:28367966

Cirrus Dopant Nano-Composite Coatings

DTIC Science & Technology

2014-11-01

100 200 300 400 500 600 HARDNESS (HV) MICROHARDNESS - ELECTROPLATED NICKEL STANDARD DC PLATED DOPED DC PLATED DOPED PULSE PLATED ↑48% 10...STANDARD COATING HARDNESS (HV) DOPED COATING MICROHARDNESS - ELECTROPLATED ZN NI ↑32% DC ZnNi Cirrus ZnNi Current Test Applications cirrus nano

Magnetron Sputtered Pulsed Laser Deposition Scale Up

DTIC Science & Technology

2003-08-14

2:721-726 34 S. J. P. Laube and E. F. Stark, “ Artificial Intellegence in Process Control of Pulsed Laser Deposition”, Proceedings of...The model would be based on mathematical simulation of real process data, neural-networks, or other artificial intelligence methods based on in situ...Laube and E. F. Stark, Proc. Symp. Artificial Intel. Real Time Control, Valencia, Spain, 3-5 Oct. ,1994, p.159-163. International Federation of

Optically Isolated Control of the MOCHI LabJet High Power Pulsed Plasma Experiment

NASA Astrophysics Data System (ADS)

Carroll, Evan; Quinley, Morgan; von der Linden, Jens; You, Setthivoine

2014-10-01

The MOCHI LabJet experiment designed to investigate the dynamics of astrophysical jets at the University of Washington, requires high energy pulsed power supplies for plasma generation and sustainment. Two 600 μ F, 10 kV DC, pulse forming, power supplies have been specifically developed for this application. For safe and convenient user operation, the power supplies are controlled remotely with optical isolation. Three input voltage signals are required for relay actuation, adjusting bank charging voltage, and to fire the experiment: long duration DC signals, long duration user adjustable DC signals and fast trigger pulses with < μ s rise times. These voltage signals are generated from National Instruments timing cards via LabVIEW and are converted to optical signals by coupling photodiodes with custom electronic circuits. At the experiment, the optical signals are converted back to usable voltage signals using custom circuits. These custom circuits and experimental set-up are presented. This work is supported by US DOE Grant DE-SC0010340.

Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

2009-05-01

Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: yudi@fi.itb.ac.id; Darma, Y., E-mail: yudi@fi.itb.ac.id

In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on γ‐Al{sub 2}O{sub 3} layer at low temperature has been systematically studied. The γ‐Al{sub 2}O{sub 3} was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10{sup −2} Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of Al{sub 2}O{sub 3} on Si(100) and the characteristic of carbon thin film on γ‐Al{submore » 2}O{sub 3} were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that Al{sub 2}O{sub 3} film is growth uniformly on Si substrate and forming the γ phase of Al{sub 2}O{sub 3}. Raman and FTIR spectra confirm the formation of graphene like carbon layer on Al{sub 2}O{sub 3}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaks analysis.« less

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

NASA Astrophysics Data System (ADS)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

DTIC Science & Technology

2015-04-03

films were deposited within a stainless steel high vacuum chamber evacuated to a pressure of 5.3 105 Pa (4 107 Torr). A 3 mm thick, 50 mm diameter...G.E. Jellison, Thin Solid Films 234 (1993) 416 –422. [34] J.I. Pankove, Absorption, in: Optical Processes in Semiconductors, Dover Publications, New

Structure, adhesive strength and electrochemical performance of nitrogen doped diamond-like carbon thin films deposited via DC magnetron sputtering.

PubMed

Khun, N W; Liu, E; Krishna, M D

2010-07-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-Si (100) substrates by DC magnetron sputtering with different nitrogen flow rates at a substrate temperature of about 100 degrees C. The chemical bonding structure of the films was characterized by X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The adhesive strength and surface morphology of the films were studied using micro-scratch tester and scanning electron microscope (SEM), respectively. The electrochemical performance of the films was evaluated by potentiodynamic polarization testing and linear sweep voltammetry. The electrolytes used for the electrochemical tests were deaerated and unstirred 0.47 M KCl aqueous solution for potentiodynamic polarization testing and 0.2 M KOH and 0.1 M KCl solutions for voltammetric analysis. It was found that the DLC:N films could well passivate the underlying substrates though the corrosion resistance of the films decreased with increased nitrogen content in the films. The DLC:N films showed wide potential windows in the KOH solution, in which the detection ability of the DLC:N films to trace lead of about 1 x 10(-3) M Pb(2+) was also tested.

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kumar, A. Guru Sampath; Obulapathi, L.; Sarmash, T. Sofi; Rani, D. Jhansi; Maddaiah, M.; Rao, T. Subba; Asokan, K.

2015-04-01

Thin films of cadmium (Cd) (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%) doped zinc oxide (ZnO) have been deposited on a glass substrate by reactive DC magnetron sputtering. The synthesized films are characterized by glancing angle x-ray diffraction (GAXRD), UV-Vis-NIR spectroscopy, four probe resistivity measurement, Hall measurement system, field emission-scanning electron microscopy and energy dispersive analysis by x-rays. A systematic study has been made on the structure, electrical and optical properties of Cd doped ZnO thin films as a function of Cd concentration (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%). All these films have a hexagonal wurtzite ZnO structure with (0 0 2) orientation without any Cd related phase from the GAXRD patterns. The grain size was increased and maximum appears at 4 wt.% Cd concentration. The electrical resistivity of the films decreased with the Cd doping and minimum resistivity was observed at 4 wt.% Cd concentration. UV-Vis-NIR studies showed that the optical band gap of ZnO (3.37 eV) was reduced to 3.10 eV which is at 4 wt.% Cd concentration.

Relationship Between Crystalline Structure and Hardness of Ti-Si-N-O Coatings Fabricated by dc Sputtering

NASA Astrophysics Data System (ADS)

García-González, Leandro; Hernández-Torres, Julián; Mendoza-Barrera, Claudia; Meléndez-Lira, Miguel; García-Ramírez, Pedro J.; Martínez-Castillo, Jaime; Sauceda, Ángel; Herrera-May, Agustin L.; Muñoz Saldaña, Juan; Espinoza-Beltrán, Francisco J.

2008-08-01

Ti-Si-N-O coatings were deposited on AISI D2 tool steel and silicon substrates by dc reactive magnetron co-sputtering using a target of Ti-Si with a constant area ratio of 0.2. The substrate temperature was 400 °C and reactive atmosphere of nitrogen and argon. For all samples, argon flow was maintained constant at 25 sccm, while the flow of the nitrogen was varied to analyze the structural changes related to chemical composition and resistivity. According to results obtained by x-ray diffraction and stoichiometry calculations by x-ray energy dispersive spectroscopy the Ti-Si-N-O coatings contain two solid solutions. The higher crystalline part corresponds to titanium oxynitrure. Hardness tests on the coatings were carried out using the indentation work model and the hardness value was determined. Finally, the values of hardness were corroborated by nanoindentation test, and values of Young’s modulus and elastic recovery were discussed. We concluded that F2TSN sample ( F Ar = 25 sccm, F N = 5 sccm, P = 200 W, and P W = 8.9 × 10-3 mbar) presented the greatest hardness and the lowest resistivity values, due to its preferential crystalline orientation.

Characterization of DC Magnetron Sputtering Plasma Used for Deposition of Amorphous Carbon Nitride

NASA Astrophysics Data System (ADS)

Camps, Enrique; Escobar-Alarcón, Luis; López, J.; Zambrano, G.; Prieto, P.

2006-12-01

Amorphous carbon nitride (a-CNx) thin films are attractive due to their potential applications, in different areas. This material can be hard and used as a protective coating, or can be soft and porous and used as the active element in gas sensors, it can also be used as a radiation detector due to its thermoluminescent response. The use of this material for one or another application, will depend on the material's structure, which can be changed by changing the deposition parameters. When using the d.c. magnetron sputtering technique it means mainly the change of discharge power, type of Ar/N2 gas mixture, and the working gas pressure. The variation of these deposition parameters has an important influence on the characteristics of the plasma formed in the discharge. In this work we studied the plasma characteristics, such as the type of excited species, plasma density, and electron temperature under different deposition conditions, using Optical Emission Spectroscopy (OES), and a single Langmuir probe. These parameters were correlated with the properties of a-CNx films deposited under those characterized regimes, in order to establish the role that the plasma parameters play on the formation of the different structures of CNx films.

Tribological Testing, Analysis and Characterization of D.C. Magnetron Sputtered Ti-Nb-N Thin Film Coatings on Stainless Steel

NASA Astrophysics Data System (ADS)

Joshi, Prathmesh

To enhance the surface properties of stainless steel, the substrate was coated with a 1μm thick coating of Ti-Nb-N by reactive DC magnetron sputtering at different N2 flow rates, substrate biasing and Nb-Ti ratio. The characterization of the coated samples was performed by the following techniques: hardness by Knoop micro-hardness tester, phase analysis by X-ray Diffraction (XRD), compositional analysis by Energy Dispersive X-ray Spectroscopy (EDS) and adhesion by scratch test. The tribology testing was performed on linearly reciprocating ball-on-plate wear testing machine and wear depth and wear volume were evaluated by white light interferometer. The micro-hardness test yielded appreciable enhancement in the surface hardness with the highest value being 1450 HK. Presence of three prominent phases namely NbN, Nb2N3 and TiN resulted from the XRD analysis. EDS analysis revealed the presence of Ti, Nb and Nitrogen. Adhesion was evaluated on the basis of critical loads for cohesive (Lc1) and adhesive (Lc2) failures with values varying between 7-12 N and 16-25 N respectively, during scratch test for coatings on SS substrates.

Phosphor doping enhanced c-axis alignment and exchange decoupling of sputtered Co-Pt perpendicular thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bo; Qin, Gaowu, E-mail: qingw@smm.neu.edu.cn; Xiao, Na

2016-04-14

In the present work, Co-23.0 at. % Pt and Co-23.0 at. % Pt-3.67 at. % P thin films with their c-axis perpendicular to the substrate surface were fabricated on a glass substrate by DC magnetron sputtering. X-ray diffraction and transmission electron microscopic analyses demonstrate that the doping of P improves the c-axis alignment and forms P-rich non-magnetic phase at grain boundary areas, the latter resulting in inter-granular exchange decoupling between Co-Pt grains. The improved c-axis alignment and the inter-granular exchange decoupling give rise to the increase of the out of plane coercivity and the squareness of the Co-Pt-P films.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-06-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

NASA Astrophysics Data System (ADS)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

FAST TRACK COMMUNICATION: Ferroelectric properties and dielectric responses of multiferroic BiFeO3 films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Qi, Xiaoding; Tsai, Po-Chou; Chen, Yi-Chun; Ko, Cheng-Hung; Huang, Jung-Chun-Andrew; Chen, In-Gann

2008-12-01

Multiferroic BiFeO3 films have been grown on LaNiO3-x/SrTiO3 and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 µC cm-2, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries.

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

NASA Astrophysics Data System (ADS)

Hidalgo, J. A.; Montero-Ocampo, C.; Cuberes, M. T.

2009-12-01

Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed to softer substoichiometric titanium nitride species and/or trapped subsurface gas. The results show that increasing the sputtering power at the Ti cathode increases the elastic homogeneity of the titanium nitride layers on the nanometer scale. Ultrasonic force microscopy elastic mapping on titanium nitride layers demonstrates the capability of the technique to provide information of high value for the engineering of improved coatings.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Technical Reports Server (NTRS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-01-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Secondary ion formation during electronic and nuclear sputtering of germanium

NASA Astrophysics Data System (ADS)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Optically isolated, 2 kHz repetition rate, 4 kV solid-state pulse trigger generator.

PubMed

Barnett, D H; Parson, J M; Lynn, C F; Kelly, P M; Taylor, M; Calico, S; Scott, M C; Dickens, J C; Neuber, A A; Mankowski, J J

2015-03-01

This paper presents the design and operation characteristics of a solid-state high voltage pulse generator. Its primary utilization is aimed at triggering a gaseous spark gap with high repeatability. Specifically, the trigger generator is designed to achieve a risetime on the order of 0.1 kV/ns to trigger the first stage, trigatron spark gap of a 10-stage, 500 kV Marx generator. The major design components are comprised of a 60 W constant current DC-DC converter for high voltage charging, a single 4 kV thyristor, a step-up pulse transformer, and magnetic switch for pulse steepening. A risetime of <30 ns and pulse magnitude of 4 kV is achieved matching the simulated performance of the design.

High-energy infrared femtosecond pulses generated by dual-chirped optical parametric amplification.

PubMed

Fu, Yuxi; Takahashi, Eiji J; Midorikawa, Katsumi

2015-11-01

We demonstrate high-energy infrared femtosecond pulse generation by a dual-chirped optical parametric amplification (DC-OPA) scheme [Opt. Express19, 7190 (2011)]. By employing a 100 mJ pump laser, a signal pulse energy exceeding 20 mJ at a wavelength of 1.4 μm was achieved before dispersion compensation. A total output energy of 33 mJ was recorded. Under a further energy scaling condition, the signal pulse was compressed to an almost transform-limited duration of 27 fs using a fused silica prism compressor. Since the DC-OPA scheme is efficient and energy scalable, design parameters for obtaining 100 mJ level infrared pulses are presented, which are suitable as driver lasers for the energy scaling of high-order harmonic generation with sub-keV photon energy.

DC Stark addressing for quantum memory in Tm:YAG

NASA Astrophysics Data System (ADS)

Gerasimov, Konstantin; Minnegaliev, Mansur; Urmancheev, Ravil; Moiseev, Sergey

2017-10-01

We observed a linear DC Stark effect for 3H6 - 3H4 optical transition of Tm3+ ions in Y3Al5O12. We observed that application of electric field pulse suppresses the two-pulse photon echo signal. If we then apply a second electric pulse of opposite polarity the echo signal is restored again, which indicates the linear nature of the observed effect. The effect is present despite the D2 symmetry of the Tm3+ sites that prohibits a linear Stark effect. Experimental data analysis shows that the observed electric field influence can be attributed to defects that break the local crystal field symmetry near Tm3+ ions. Using this effect we demonstrate selective retrieval of light pulses in two-pulse photon echo.

Study of catalysis for solid oxide fuel cells and direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Jiang, Xirong

Fuel cells offer the enticing promise of cleaner electricity with lower environmental impact than traditional energy conversion technologies. Driven by the interest in power sources for portable electronics, and distributed generation and automotive propulsion markets, active development efforts in the technologies of both solid oxide fuel cell (SOFC) and direct methanol fuel cell (DMFC) devices have achieved significant progress. However, current catalysts for fuel cells are either of low catalytic activity or extremely expensive, presenting a key barrier toward the widespread commercialization of fuel cell devices. In this thesis work, atomic layer deposition (ALD), a novel thin film deposition technique, was employed to apply catalytic Pt to SOFC, and investigate both Pt skin catalysts and Pt-Ru catalysts for methanol oxidation, a very important reaction for DMFC, to increase the activity and utilization levels of the catalysts while simultaneously reducing the catalyst loading. For SOFCs, we explored the use of ALD for the fabrication of electrode components, including an ultra-thin Pt film for use as the electrocatalyst, and a Pt mesh structure for a current collector for SOFCs, aiming for precise control over the catalyst loading and catalyst geometry, and enhancement in the current collect efficiency. We choose Pt since it has high chemical stability and excellent catalytic activity for the O2 reduction reaction and the H2 oxidation reaction even at low operating temperatures. Working SOFC fuel cells were fabricated with ALD-deposited Pt thin films as an electrode/catalyst layer. The measured fuel cell performance reveals that comparable peak power densities were achieved for ALD-deposited Pt anodes with only one-fifth of the Pt loading relative to a DC-sputtered counterpart. In addition to the continuous electrocatalyst layer, a micro-patterned Pt structure was developed via the technique of area selective ALD. By coating yttria-stabilized zirconia, a typical solid oxide electrolyte, with patterned (octadecyltrichlorosilane) ODTS self-assembled monolayers (SAMs), Pt thin films were grown selectively on the SAM-free surface regions. Features with sizes as small as 2 mum were deposited by this combined ALD-muCP method. The micro-patterned Pt structure deposited by area selective ALD was applied to SOFCs as a current collector grid/patterned catalyst. An improvement in the fuel cell performance by a factor of 10 was observed using the Pt current collector grids/patterned catalyst integrated onto cathodic La0.6Sr 0.4Co0.2Fe0.8O3-delta. For possible catalytic anodes in DMFCs employing a 1:1 stoichiometric methanol-water reforming mixture, two strategies were employed in this thesis. One approach is to fabricate skin catalysts, where ALD Pt films of various thicknesses were used to coat sputtered Ru films forming Pt skin catalysts for study of methanol oxidation. Another strategy is to replace or alloy Pt with Ru; for this effort, both dc-sputtering and atomic layer deposition were employed to fabricate Pt-Ru catalysts of various Ru contents. The electrochemical behavior of all of the Pt skin catalysts, the DC co-sputtered Pt-Ru catalysts and the ALD co-deposited Pt-Ru catalysts were evaluated at room temperature for methanol oxidation using cyclic voltammetry and chronoamperometry in highly concentrated 16.6 M MeOH, which corresponds to the stoichiometric fuel that will be employed in next generation DMFCs that are designed to minimize or eliminate methanol crossover. The catalytic activity of sputtered Ru catalysts toward methanol oxidation is strongly enhanced by the ALD Pt overlayer, with such skin layer catalysts displaying superior catalytic activity over pure Pt. For both the DC co-sputtered catalysts and ALD co-deposited catalysts, the electrochemical studies illustrate that the optimal stoichiometry ratio for Pt to Ru is approximately 1:1, which is in good agreement with most literature.

Investigations Of A Pulsed Cathodic Vacuum Arc

NASA Astrophysics Data System (ADS)

Oates, T. W. H.; Pigott, J.; Denniss, P.; Mckenzie, D. R.; Bilek, M. M. M.

2003-06-01

Cathodic vacuum arcs are well established as a method for producing thin films for coatings and as a source of metal ions. Research into DC vacuum arcs has been going on for over ten years in the School of Physics at the University of Sydney. Recently a project was undertaken in the school to design and build a pulsed CVA for use in the investigation of plasma sheaths and plasma immersion ion implantation. Pulsed cathodic vacuum arcs generally have a higher current and plasma density and also provide a more stable and reproducible plasma density than their DC counterparts. Additionally it has been shown that if a high repetition frequency can be established the deposition rate of pulsed arcs is equal to or greater than that of DC arcs with a concomitant reduction in the rate of macro-particle formation. We present here results of our investigations into the building of a center-triggered pulsed cathodic vacuum arc. The design of the power supply and trigger mechanism and the geometry of the anode and cathode are examined. Observations of type I and II arc spots using a CCD camera, and cathode spot velocity dependence on arc current will be presented. The role of retrograde motion in a high current pulsed arc is discussed.

Catalytic activity and stability of nanometic Rh overlayers prepared by pulsed arc-plasma deposition and r.f. magnetron-sputtering

NASA Astrophysics Data System (ADS)

Misumi, Satoshi; Matsumoto, Akinori; Yoshida, Hiroshi; Sato, Tetsuya; Machida, Masato

2018-01-01

50 μm-thick Fe-Cr-Al metal foils covered by 7 nm-thick Rh overlayers were prepared by pulsed arc-plasma (AP) and r.f. magnetron sputtering technique to compare their catalytic activities. As-prepared metal foil catalysts were wrapped into a honeycomb structure with a density of 900 cells per square inches and the stoichiometric NO-CO-C3H6-O2 reaction was performed at space velocity of 1.2 × 105 h-1. During temperature ramp at 10 °C min-1, honeycomb catalysts showed steep light-off of NO, CO, and C3H6 at above 200 °C and their conversions soon reached to almost 100%. Both catalysts exhibited high turnover frequencies close to or more than 50-fold greater compared with those for a reference Rh/ZrO2 powder-coated cordierite honeycomb prepared using a conventional slurry coating. When the temperature ramping was repeated, however, the catalytic activity was decreased to the different extent depending on the preparation procedure. Significant deactivation occurred only when prepared by sputtering, whereas the sample prepared by AP showed no signs of deactivation. The deactivation is associated with the formation of passivation layers consisting of Fe, Cr, and Al oxides, which covered the surface and decreased the surface concentration of Rh. The Rh overlayer formed by AP was found to be thermally stable because of the strong adhesion to the metal foil surface, compared to the sample prepared by sputtering.

Electrofishing for crappies: Electrical settings influence immobilization efficiency, injury, and mortality

USGS Publications Warehouse

Dolan, C.R.; Miranda, L.E.; Henry, T.B.

2002-01-01

Continuous direct current (DC) and pulsed DC (PDC) of varying frequency and pulse period are commonly used to immobilize and collect crappies Pomoxis spp. in freshwater. However, little information is available about the minimum electrical-setting thresholds required for immobilization or how the settings relate to incidence of injury. We investigated the effect of increasing power densities on the immobilization and injury of black crappies P. nigromaculatus (average total length = 154 mm) treated with DC and various PDC settings. Forced swimming toward the electrodes was observed in black crappies exposed to DC, but that was less apparent for PDC. The minimum peak power densities required to immobilize black crappies ranged from 0.10 to 6.5 mW/cm3 and depended on pulse frequency and period. The incidence of hemorrhaging ranged from 0% to 50% and that of spinal damage from 9% to 45%. However, the severity of injury also depended on pulse frequency and period. No fish suffered mortality at or below the immobilization thresholds, but mortality ranged from 0% to 15% at settings above the thresholds. Mortality was observed with PDC settings of 15 Hz only. Fish that were tetanized following electrical treatment were more prone to injury than those that exhibited narcosis.

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

NASA Astrophysics Data System (ADS)

Liu, Hong-Tao; Yang, Bao-He; Lv, Hang-Bing; Xu, Xiao-Xin; Luo, Qing; Wang, Guo-Ming; Zhang, Mei-Yun; Long, Shi-Bing; Liu, Qi; Liu, Ming

2015-02-01

We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor (1T1R) resistance random access memory (RRAM) device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state (HRS) under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament (CF) formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state (LRS) can be easily changed by removing a few trapping states from the conducting path. Hence, a higher HRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Regulation of a lightweight high efficiency capacitator diode voltage multiplier dc-dc converter

NASA Technical Reports Server (NTRS)

Harrigill, W. T., Jr.; Myers, I. T.

1976-01-01

A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu; Alves, Fabio, E-mail: falves@alionscience.com

2016-01-15

Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to bemore » sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.« less

The effect of C content on the mechanical properties of Ti-Zr coatings.

PubMed

Rodríguez-Hernández, M G; Jiménez, O; Alvarado-Hernández, F; Flores, M; Andrade, E; Canto, C E; Ávila, C; Espinoza-Beltrán, F

2015-09-01

In this study, Ti-Zr and Ti-Zr-C coatings were deposited at room temperature via pulsed-DC magnetron sputtering. A 70Ti-30Zr at% target and a 99.99% graphite plate were used to deposit samples. In order to modify C content, coatings were deposited at different target powers such as 50, 75 and 100 W. Changes on the structure, microstructure and mechanical properties due to C addition were studied. Results indicate that the as-deposited coatings were partly crystalline and that an increment on C content stabilized α' phase and inhibited the appearance of ω precipitates. Therefore, Ti-Zr-C alloys with C>1.9 at% showed only α' phase whereas the others alloys exhibited α'+ω structures. Hardness values from 12.94 to 34.31 GPa were obtained, whereas the elastic modulus was found between 181.84 and 298 GPa. Finally, a high elastic recovery ratio (0.69-0.87) was observed as a function of composition. The overall properties of these coatings were improved due to C content increment, martensitic α' phase and nanocrystalline grain size (10-16 nm). Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells.

PubMed

Hussain, Shahzada Qamar; Oh, Woong-Kyo; Kim, Sunbo; Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Lee, Youngseok; Dao, Vinh Ai; Velumani, S; Yi, Junsin

2014-12-01

Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 x 10(-4) Ω x cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ(ITO)) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The Φ(ITO) increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

PubMed Central

Cai, Wei; Zhu, Zhennan; Wei, Jinglin; Fang, Zhiqiang; Zheng, Zeke; Zhou, Shangxiong; Peng, Junbiao; Lu, Xubing

2017-01-01

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO2 films by intentionally increasing the concentration of precursor. The ZrO2 films not only exhibit a low leakage current density of 10−6 A/cm2 at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm2·V−1·s−1 and a Ion/Ioff ratio of 106 in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO2/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness. PMID:28825652

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

PubMed

Cai, Wei; Zhu, Zhennan; Wei, Jinglin; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Zhou, Shangxiong; Yao, Rihui; Peng, Junbiao; Lu, Xubing

2017-08-21

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO₂ films by intentionally increasing the concentration of precursor. The ZrO₂ films not only exhibit a low leakage current density of 10 -6 A/cm² at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm²·V -1 ·s -1 and a I on /I off ratio of 10⁶ in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO₂/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.

Design of power electronics for TVC EMA systems

NASA Technical Reports Server (NTRS)

Nelms, R. Mark

1993-01-01

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Modified Dual Three-Pulse Modulation technique for single-phase inverter topology

NASA Astrophysics Data System (ADS)

Sree Harsha, N. R.; Anitha, G. S.; Sreedevi, A.

2016-01-01

In a recent paper, a new modulation technique called Dual Three Pulse Modulation (DTPM) was proposed to improve the efficiency of the power converters of the Electric/Hybrid/Fuel-cell vehicles. It was simulated in PSIM 9.0.4 and uses analog multiplexers to generate the modulating signals for the DC/DC converter and inverter. The circuit used is complex and many other simulation softwares do not support the analog multiplexers as well. Also, the DTPM technique produces modulating signals for the converter, which are essentially needed to produce the modulating signals for the inverter. Hence, it cannot be used efficiently to switch the valves of a stand-alone inverter. We propose a new method to generate the modulating signals to switch MOSFETs of a single phase Dual-Three pulse Modulation based stand-alone inverter. The circuits proposed are simulated in Multisim 12.0. We also show an alternate way to switch a DC/DC converter in a way depicted by DTPM technique both in simulation (MATLAB/Simulink) and hardware. The circuitry is relatively simple and can be used for the further investigations of DTPM technique.

Recovery of consciousness in broilers following combined dc and ac stunning

USDA-ARS?s Scientific Manuscript database

Broilers in the United States are typically electrically stunned using low voltage-high frequency pulsed DC water bath stunners and in the European Union broilers are electrocuted using high voltage-low frequency AC. DC stunned broilers regain consciousness in the absence of exsanguination and AC st...

Bond topography and nanostructure of hydrogenated fullerene-like carbon films: A comparative study

NASA Astrophysics Data System (ADS)

Wang, Yongfu; Gao, Kaixiong; Shi, Jing; Zhang, Junyan

2016-09-01

Fullerene-like nanostructural hydrogenated amorphous carbon (FL-C:H) films were prepared by dc- and pulse- plasma enhanced chemical vapor deposition technique (PECVD). Both the films exhibit relatively stresses (0.63 GPa) in spite of their FL features and nanostructural bonding configurations, especially the pentagonal carbon rings. The creation of pentagonal rings is not fully driven by thermodynamics, but is closely related to compressive stress determined by the ion bombardment at the discharged state of the pulse- and dc- discharged plasmas methods. The dc method leads to FL's basal planes which contain less cross-linkages, and causes amorphous strongly hydrogenated structures.

Controller for computer control of brushless dc motors. [automobile engines

NASA Technical Reports Server (NTRS)

Hieda, L. S. (Inventor)

1981-01-01

A motor speed and torque controller for brushless d.c. motors provides an unusually smooth torque control arrangement. The controller provides a means for controlling a current waveform in each winding of a brushless dc motor by synchronization of an excitation pulse train from a programmable oscillator. Sensing of torque for synchronization is provided by a light beam chopper mounted on the motor rotor shaft. Speed and duty cycle are independently controlled by controlling the frequency and pulse width output of the programmable oscillator. A means is also provided so that current transitions from one motor winding to another is effected without abrupt changes in output torque.

Conversion of continuous-direct-current TIG welder to pulse-arc operation

NASA Technical Reports Server (NTRS)

Lien, D. R.

1969-01-01

Electronics package converts a continuous-dc tungsten-inert gas welder for pulse-arc operation. Package allows presetting of the pulse rate, duty cycle, and current value, and enables welding of various alloys and thicknesses of materials.

Optimization of sputter deposition parameters for magnetostrictive Fe62Co19Ga19/Si(100) films

NASA Astrophysics Data System (ADS)

Jen, S. U.; Tsai, T. L.

2012-04-01

A good magnetostrictive material should have large saturation magnetostriction (λS) and low saturation (or anisotropy) field (HS), such that its magnetostriction susceptibility (SH) can be as large as possible. In this study, we have made Fe62Co19Ga19/Si(100) nano-crystalline films by using the dc magnetron sputtering technique under various deposition conditions: Ar working gas pressure (pAr) was varied from 1 to 15 mTorr; sputtering power (Pw) was from 10 to 120 W; deposition temperature (TS) was from room temperature (RT) to 300 °C, The film thickness (tf) was fixed at 175 nm. Each magnetic domain looked like a long leaf, with a long-axis of about 12-15 μm and a short-axis of about 1.5 μm. The optimal magnetic and electrical properties were found from the Fe62Co19Ga19 film made with the sputter deposition parameters of pAr = 5 mTorr, Pw = 80 W, and TS = RT. Those optimal properties include λS = 80 ppm, HS = 19.8 Oe, SH = 6.1 ppm/Oe, and electrical resistivity ρ = 57.0 μΩ cm. Note that SH for the conventional magnetostrictive Terfenol-D film is, in general, equal to 1.5 ppm/Oe only.

Plasma Accelerator and Energy Conversion Research

DTIC Science & Technology

1982-10-29

performance tests have been accomplished. A self-contained recirculating AMTEC device with a thermal to electric conversion efficiency of 19% has been...combined efficiency . These two match up particularly well, because thermionic conversion is a high temperature technique, whereas AMTEC is limited to...EXPERIENTAL: Samples: The samples were prepared with a high rate DC magnetron sputtering apparatus ( SFI model 1 ). The sample set consisted of four

[Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

PubMed

Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

2009-03-01

Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low resistance and large size (300 mm x 300 mm) AZO film.

ICRF-edge and surface interactions

NASA Astrophysics Data System (ADS)

D'Ippolito, D. A.; Myra, J. R.

2011-08-01

This paper describes a number of deleterious interactions between radio-frequency (rf) waves and the boundary plasma in fusion experiments. These effects can lead to parasitic power dissipation, reduced heating efficiency, formation of hot spots at material boundaries, sputtering and self-sputtering, and arcing in the antenna structure. Minimizing these interactions is important to the success of rf heating, especially in future experiments with long-pulse or steady-state operation, higher power density, and high-Z divertor and walls. These interactions will be discussed with experimental examples. Finally, the present state of modeling and future plans will be summarized.

Preventing kinetic roughening in physical vapor-phase-deposited films.

PubMed

Vasco, E; Polop, C; Sacedón, J L

2008-01-11

The growth kinetics of the mostly used physical vapor-phase deposition techniques -molecular beam epitaxy, sputtering, flash evaporation, and pulsed laser deposition-is investigated by rate equations with the aim of testing their suitability for the preparation of ultraflat ultrathin films. The techniques are studied in regard to the roughness and morphology during early stages of growth. We demonstrate that pulsed laser deposition is the best technique for preparing the flattest films due to two key features [use of (i) a supersaturated pulsed flux of (ii) hyperthermal species] that promote a kinetically limited Ostwald ripening mechanism.

The advantages of wearable green reflected photoplethysmography.

PubMed

Maeda, Yuka; Sekine, Masaki; Tamura, Toshiyo

2011-10-01

This report evaluates the efficacy of reflected-type green light photoplethysmography (green light PPG). Transmitted infrared light was used for PPG and the arterial pulse was monitored transcutaneously. The reflected PPG signal contains AC components based on the heartbeat-related signal from the arterial blood flow and DC components, which include reflectance and scattering from tissue. Generally, changes in AC components are monitored, but the DC components play an important role during heat stress. In this study, we compared the signal of green light PPG to infrared PPG and ECG during heat stress. The wavelengths of the green and infrared light were 525 nm and 880 nm, respectively. Experiments were performed on young healthy subjects in cold (10°C), hot (45°C), and normal environments. The pulse rates were compared among three measurement devices and the AC and DC components of the PPG signal were evaluated during heat stress. The pulse rates obtained from green light PPG were strongly correlated with the R-R interval of an electrocardiogram in all environments, but those obtained from infrared light PPG displayed a weaker correlation with cold exposure. The AC components were of similar signal output for both wavelengths during heat stress. Also, the DC components for green light PPG were similar during heat stress, but showed less signal output for infrared light PPG during hot exposure. The main reason for the reduced DC components was speculated to be the increased blood flow at the vascular bed. Therefore, reflected green light PPG can be useful for pulse rate monitoring because it is less influenced by the tissue and vein region.

Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrantoni, M.; Rossi, C.; Salvagnac, L.

2010-10-15

Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon-oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (<50 MPa) multilayered nanoenergetic material, each layer being in the range of tens nanometer to one micron. The reaction temperature and heat of reaction were measured using differential scanning calorimetry and thermal analysis to compare nanostructured layered materials to microstructured materials. For the nanostructured multilayers, all the energy is released before the Al melting point. In the case ofmore » the microstructured samples at least 2/3 of the energy is released at higher temperatures, between 1036 and 1356 K.« less

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

NASA Astrophysics Data System (ADS)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.

The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO 2/SiO 2 thin-film pairs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristau, Detlev; Papernov, S.; Kozlov, A. A.

2015-11-23

The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and an E-field peak and averagemore » intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO 2 and SiO 2 materials.« less

Enhanced tunability of the composition in silicon oxynitride thin films by the reactive gas pulsing process

NASA Astrophysics Data System (ADS)

Aubry, Eric; Weber, Sylvain; Billard, Alain; Martin, Nicolas

2014-01-01

Silicon oxynitride thin films were sputter deposited by the reactive gas pulsing process. Pure silicon target was sputtered in Ar, N2 and O2 mixture atmosphere. Oxygen gas was periodically and solely introduced using exponential signals. In order to vary the injected O2 quantity in the deposition chamber during one pulse at constant injection time (TON), the tau mounting time τmou of the exponential signals was systematically changed for each deposition. Taking into account the real-time measurements of the discharge voltage and the I(O*)/I(Ar*) emission lines ratio, it is shown that the oscillations of the discharge voltage during the TON and TOFF times (injection of O2 stopped) are attributed to the preferential adsorption of the oxygen compared to that of the nitrogen. The sputtering mode alternates from a fully nitrided mode (TOFF time) to a mixed mode (nitrided and oxidized mode) during the TON time. For the highest injected O2 quantities, the mixed mode tends toward a fully oxidized mode due to an increase of the trapped oxygen on the target. The oxygen (nitrogen) concentration in the SiOxNy films similarly (inversely) varies as the oxygen is trapped. Moreover, measurements of the contamination speed of the Si target surface are connected to different behaviors of the process. At low injected O2 quantities, the nitrided mode predominates over the oxidized one during the TON time. It leads to the formation of Si3N4-yOy-like films. Inversely, the mixed mode takes place for high injected O2 quantities and the oxidized mode prevails against the nitrided one producing SiO2-xNx-like films.

The influence of changes in blood flow on the accuracy of pulse oximetry in humans.

PubMed

Vegfors, M; Lindberg, L G; Lennmarken, C

1992-05-01

Oxygen saturation (SpO2) was measured with a pulse oximeter in ten healthy, young men breathing air. A pulse oximeter probe was attached to the second toe and a laser Doppler probe to the first toe of the same foot for measurement of changes in peripheral blood flow. The pulse oximeter and laser Doppler readings were simultaneously compared when the foot was positioned 40 cm (position 1) above heart level, elevated 10 cm (position 2) above heart level and horizontally at heart level (position 3). Using this experimental human model, we achieved various blood flows. The AC and DC optical signals used for determination of oxygen saturation were recorded from the pulse oximeter and analysed. There was a significant increase (P less than 0.05) between position 1 and 3 in blood flow as measured by the laser Doppler flow meter. The corresponding pulse oximeter readings of haemoglobin saturation also increased significantly (P less than 0.05) comparing these two leg positions. Analysing the AC- and DC optical signals, the AC value of infrared light increased considerably, while the AC value of the red light decreased slightly. The DC values of red and infrared light did not change significantly. In summary, when blood flow was decreased, the ratio of red to infrared transmitted light was changed, resulting in a low SpO2 reading.

Formation of manganese nanoclusters in a sputtering/aggregation source and the roles of individual operating parameters

NASA Astrophysics Data System (ADS)

Khojasteh, Malak; Kresin, Vitaly V.

2016-12-01

We describe the production of size selected manganese nanoclusters using a dc magnetron sputtering/aggregation source. Since nanoparticle production is sensitive to a range of overlapping operating parameters (in particular, the sputtering discharge power, the inert gas flow rates, and the aggregation length) we focus on a detailed map of the influence of each parameter on the average nanocluster size. In this way it is possible to identify the main contribution of each parameter to the physical processes taking place within the source. The discharge power and argon flow supply the atomic vapor, and argon also plays the crucial role in the formation of condensation nuclei via three-body collisions. However, neither the argon flow nor the discharge power have a strong effect on the average nanocluster size in the exiting beam. Here the defining role is played by the source residence time, which is governed by the helium supply and the aggregation path length. The size of mass selected nanoclusters was verified by atomic force microscopy of deposited particles.

Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures

NASA Astrophysics Data System (ADS)

Tuyaerts, Romain; Poncelet, Olivier; Raskin, Jean-Pierre; Proost, Joris

2017-10-01

In this article, we propose ZnO thin films as a suitable material for piezoresistors in transparent and flexible electronics. ZnO thin films have been deposited by DC reactive magnetron sputtering at room temperature at various oxygen partial pressures. All the films have a wurtzite structure with a strong (0002) texture measured by XRD and are almost stoichiometric as measured by inductively coupled plasma optical emission spectroscopy. The effect of oxygen concentration on grain growth has been studied by in-situ multi-beam optical stress sensor, showing internal stress going from 350 MPa to -1.1 GPa. The transition between tensile and compressive stress corresponds to the transition between metallic and oxidized mode of reactive sputtering. This transition also induces a large variation in optical properties—from absorbent to transparent, and in the resistivity—from 4 × 10 - 2 Ω .cm to insulating. Finally, the piezoresistance of the thin film has been studied and showed a gauge factor (ΔR/R)/ɛ comprised between -5.8 and -8.5.

Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PubMed Central

Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

2015-01-01

Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

Pulse Width Modulator Controller Design for a Brushless DC Motor Position Servo.

DTIC Science & Technology

1987-06-01

C. POWER CONDITIONER SIMULATION Accurate modeling of power conditioning and commutation in brushless dc motors requires explicit definition of the...Study of a Brushless DC Motor Power Conditioner for a Cruise Missile Fin Control Actuator, Master’s Thesis, Naval Postgraduate School, Monterey, Ca...DESIGN FOR A BRUSHLESS DC MOTOR POSITION SERVO by Vincent S. Rossitto June 1987 Thesis Advisor: Alex Gerba, Jr. Approved for public release

Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization.

PubMed

Zhang, H-S; Komvopoulos, K

2008-07-01

Filtered cathodic vacuum arc (FCVA) deposition is characterized by plasma beam directionality, plasma energy adjustment via substrate biasing, macroparticle filtering, and independent substrate temperature control. Between the two modes of FCVA deposition, namely, direct current (dc) and pulsed arc, the dc mode yields higher deposition rates than the pulsed mode. However, maintaining the dc arc discharge is challenging because of its inherent plasma instabilities. A system generating a special configuration of magnetic field that stabilizes the dc arc discharge during film deposition is presented. This magnetic field is also part of the out-of-plane magnetic filter used to focus the plasma beam and prevent macroparticle film contamination. The efficiency of the plasma-stabilizing magnetic-field mechanism is demonstrated by the deposition of amorphous carbon (a-C) films exhibiting significantly high hardness and tetrahedral carbon hybridization (sp3) contents higher than 70%. Such high-quality films cannot be produced by dc arc deposition without the plasma-stabilizing mechanism presented in this study.

Treatment with chemotherapy and dendritic cells pulsed with multiple Wilms' tumor 1 (WT1)-specific MHC class I/II-restricted epitopes for pancreatic cancer.

PubMed

Koido, Shigeo; Homma, Sadamu; Okamoto, Masato; Takakura, Kazuki; Mori, Masako; Yoshizaki, Shinji; Tsukinaga, Shintaro; Odahara, Shunichi; Koyama, Seita; Imazu, Hiroo; Uchiyama, Kan; Kajihara, Mikio; Arakawa, Hiroshi; Misawa, Takeyuki; Toyama, Yoichi; Yanagisawa, Satoru; Ikegami, Masahiro; Kan, Shin; Hayashi, Kazumi; Komita, Hideo; Kamata, Yuko; Ito, Masaki; Ishidao, Takefumi; Yusa, Sei-Ichi; Shimodaira, Shigetaka; Gong, Jianlin; Sugiyama, Haruo; Ohkusa, Toshifumi; Tajiri, Hisao

2014-08-15

We performed a phase I trial to investigate the safety, clinical responses, and Wilms' tumor 1 (WT1)-specific immune responses following treatment with dendritic cells (DC) pulsed with a mixture of three types of WT1 peptides, including both MHC class I and II-restricted epitopes, in combination with chemotherapy. Ten stage IV patients with pancreatic ductal adenocarcinoma (PDA) and 1 patient with intrahepatic cholangiocarcinoma (ICC) who were HLA-positive for A*02:01, A*02:06, A*24:02, DRB1*04:05, DRB1*08:03, DRB1*15:01, DRB1*15:02, DPB1*05:01, or DPB1*09:01 were enrolled. The patients received one course of gemcitabine followed by biweekly intradermal vaccinations with mature DCs pulsed with MHC class I (DC/WT1-I; 2 PDA and 1 ICC), II (DC/WT1-II; 1 PDA), or I/II-restricted WT1 peptides (DC/WT1-I/II; 7 PDA), and gemcitabine. The combination therapy was well tolerated. WT1-specific IFNγ-producing CD4(+) T cells were significantly increased following treatment with DC/WT1-I/II. WT1 peptide-specific delayed-type hypersensitivity (DTH) was detected in 4 of the 7 patients with PDA vaccinated with DC/WT1-I/II and in 0 of the 3 patients with PDA vaccinated with DC/WT1-I or DC/WT1-II. The WT1-specific DTH-positive patients showed significantly improved overall survival (OS) and progression-free survival (PFS) compared with the negative control patients. In particular, all 3 patients with PDA with strong DTH reactions had a median OS of 717 days. The activation of WT1-specific immune responses by DC/WT1-I/II combined with chemotherapy may be associated with disease stability in advanced pancreatic cancer. ©2014 American Association for Cancer Research.

Characterization of surface modifications by white light interferometry: applications in ion sputtering, laser ablation, and tribology experiments.

PubMed

Baryshev, Sergey V; Erck, Robert A; Moore, Jerry F; Zinovev, Alexander V; Tripa, C Emil; Veryovkin, Igor V

2013-02-27

In materials science and engineering it is often necessary to obtain quantitative measurements of surface topography with micrometer lateral resolution. From the measured surface, 3D topographic maps can be subsequently analyzed using a variety of software packages to extract the information that is needed. In this article we describe how white light interferometry, and optical profilometry (OP) in general, combined with generic surface analysis software, can be used for materials science and engineering tasks. In this article, a number of applications of white light interferometry for investigation of surface modifications in mass spectrometry, and wear phenomena in tribology and lubrication are demonstrated. We characterize the products of the interaction of semiconductors and metals with energetic ions (sputtering), and laser irradiation (ablation), as well as ex situ measurements of wear of tribological test specimens. Specifically, we will discuss: i. Aspects of traditional ion sputtering-based mass spectrometry such as sputtering rates/yields measurements on Si and Cu and subsequent time-to-depth conversion. ii. Results of quantitative characterization of the interaction of femtosecond laser irradiation with a semiconductor surface. These results are important for applications such as ablation mass spectrometry, where the quantities of evaporated material can be studied and controlled via pulse duration and energy per pulse. Thus, by determining the crater geometry one can define depth and lateral resolution versus experimental setup conditions. iii. Measurements of surface roughness parameters in two dimensions, and quantitative measurements of the surface wear that occur as a result of friction and wear tests. Some inherent drawbacks, possible artifacts, and uncertainty assessments of the white light interferometry approach will be discussed and explained.

Characterization of Surface Modifications by White Light Interferometry: Applications in Ion Sputtering, Laser Ablation, and Tribology Experiments

PubMed Central

Baryshev, Sergey V.; Erck, Robert A.; Moore, Jerry F.; Zinovev, Alexander V.; Tripa, C. Emil; Veryovkin, Igor V.

2013-01-01

In materials science and engineering it is often necessary to obtain quantitative measurements of surface topography with micrometer lateral resolution. From the measured surface, 3D topographic maps can be subsequently analyzed using a variety of software packages to extract the information that is needed. In this article we describe how white light interferometry, and optical profilometry (OP) in general, combined with generic surface analysis software, can be used for materials science and engineering tasks. In this article, a number of applications of white light interferometry for investigation of surface modifications in mass spectrometry, and wear phenomena in tribology and lubrication are demonstrated. We characterize the products of the interaction of semiconductors and metals with energetic ions (sputtering), and laser irradiation (ablation), as well as ex situ measurements of wear of tribological test specimens. Specifically, we will discuss: Aspects of traditional ion sputtering-based mass spectrometry such as sputtering rates/yields measurements on Si and Cu and subsequent time-to-depth conversion. Results of quantitative characterization of the interaction of femtosecond laser irradiation with a semiconductor surface. These results are important for applications such as ablation mass spectrometry, where the quantities of evaporated material can be studied and controlled via pulse duration and energy per pulse. Thus, by determining the crater geometry one can define depth and lateral resolution versus experimental setup conditions. Measurements of surface roughness parameters in two dimensions, and quantitative measurements of the surface wear that occur as a result of friction and wear tests. Some inherent drawbacks, possible artifacts, and uncertainty assessments of the white light interferometry approach will be discussed and explained. PMID:23486006

Corrosion mechanism and model of pulsed DC microarc oxidation treated AZ31 alloy in simulated body fluid

NASA Astrophysics Data System (ADS)

Gu, Yanhong; Chen, Cheng-fu; Bandopadhyay, Sukumar; Ning, Chengyun; Zhang, Yongjun; Guo, Yuanjun

2012-06-01

This paper addresses the effect of pulse frequency on the corrosion behavior of microarc oxidation (MAO) coatings on AZ31 Mg alloys in simulated body fluid (SBF). The MAO coatings were deposited by a pulsed DC mode at four different pulse frequencies of 300 Hz, 500 Hz, 1000 Hz and 3000 Hz with a constant pulse ratio. Potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) tests were used for corrosion rate and electrochemical impedance evaluation. The corroded surfaces were examined by X-ray diffraction (XRD), X-ray fluorescence (XRF) and optical microscopy. All the results exhibited that the corrosion resistance of MAO coating produced at 3000 Hz is superior among the four frequencies used. The XRD spectra showed that the corrosion products contain hydroxyapatite, brucite and quintinite. A model for corrosion mechanism and corrosion process of the MAO coating on AZ31 Mg alloy in the SBF is proposed.

Power supply and pulsing strategies for the future linear colliders

NASA Astrophysics Data System (ADS)

Brogna, A. S.; Göttlicher, P.; Weber, M.

2012-02-01

The concept of the power delivery systems of the future linear colliders exploits the pulsed bunch structure of the beam in order to minimize the average current in the cables and the electronics and thus to reduce the material budget and heat dissipation. Although modern integrated circuit technologies are already available to design a low-power system, the concepts on how to pulse the front-end electronics and further reduce the power are not yet well understood. We propose a possible implementation of a power pulsing system based on a DC/DC converter and we choose the Analog Hadron Calorimeter as a specific example. The model features large switching currents of electronic modules in short time intervals to stimulate the inductive components along the cables and interconnections.

The CARIBU EBIS control and synchronization system

NASA Astrophysics Data System (ADS)

Dickerson, Clayton; Peters, Christopher

2015-01-01

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current.

PubMed

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

NASA Astrophysics Data System (ADS)

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Protection from high-velocity impact particles for quartz glass by coatings on the basis of Al-Si-N

NASA Astrophysics Data System (ADS)

Bozhko, I. A.; Rybalko, E. V.; Fedorischeva, M. V.; Solntsev, V. L.; Cherniavsky, A. G.; Kaleri, A. Yu.; Psakhie, S. G.; Sergeev, V. P.

2016-11-01

The paper presents the results of the research of the phase composition and the mechanical properties of the coatings on the basis of Al-Si-N system produced by pulsed magnetron sputtering on the KV glass substrates. By the X-ray diffraction method, it has been discovered that the coatings contain AlN phase (hcp) with different thickness. The deposition of Al-Si-N coating system allows both increasing the microhardness of the surface layer of the quartz glass up to 29 GPa, and maintaining high elastic properties (We > 0.70). The laboratory tests have been carried out involving the impact of high-speed flows of iron particles on the Al-Si-N protective coating with different thicknesses produced by pulsed magnetron sputtering. The increase of Al-Si-N coating thickness from 1µm to 10µm decreases 4-fold the surface density of the craters on the samples caused by a high-speed flow of iron particles.

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

NASA Astrophysics Data System (ADS)

Tucker, Mark D.; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna

2014-04-01

Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A "fullerene-like" (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges

NASA Astrophysics Data System (ADS)

Kimura, Takashi; Yoshida, Ryo; Mishima, Toshihiko; Azuma, Kingo; Nakao, Setsuo

2018-06-01

Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm‑2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.

Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

NASA Technical Reports Server (NTRS)

Distefano, S.; Rameshan, R.; Fitzgerald, D. J.

1991-01-01

Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

PubMed Central

Mahadeva, Sreekanth K.; Fan, Jincheng; Biswas, Anis; Sreelatha, K.S.; Belova, Lyubov; Rao, K.V.

2013-01-01

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies. PMID:28348346

Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

NASA Astrophysics Data System (ADS)

Cheng, Xuemei; Gotoh, Kazuhiro; Nakagawa, Yoshihiko; Usami, Noritaka

2018-06-01

Electrical and structural properties of TiO2 thin films deposited at room temperature by reactive DC sputtering have been investigated on three different substrates: high resistivity (>1000 Ω cm) float zone Si(1 1 1), float zone Si(1 0 0) and alkali free glass. As-deposited TiO2 films on glass substrate showed extremely high resistivity of (∼5.5 × 103 Ω cm). In contrast, lower resistivities of ∼2 Ω cm and ∼5 Ω cm were obtained for films on Si(1 1 1) and Si(1 0 0), respectively. The as-deposited films were found to be oxygen-rich amorphous TiO2 for all the substrates as evidenced by X-ray photoemission spectroscopy and X-ray diffraction. Subsequent annealing led to appearance of anatase TiO2 on Si but not on glass. The surface of as-deposited TiO2 on Si was found to be rougher than that on glass. These results suggest that the big difference of electrical resistivity of TiO2 would be related with existence of more anatase nuclei forming on crystalline substrates, which is consistent with the theory of charged clusters that smaller clusters tend to adopt the substrate structure.

Synthesis of Ag-Cu-Pd alloy thin films by DC-magnetron sputtering: Case study on microstructures and optical properties

NASA Astrophysics Data System (ADS)

Rezaee, Sahar; Ghobadi, Nader

2018-06-01

The present study aims to investigate optical properties of Ag-Cu-Pd alloy thin films synthesized by DC-magnetron sputtering method. The thin films are deposited on the glass and silicon substrates using Argon gas and Ag-Cu-Pd target. XRD analysis confirms the successful growth of Ag, Cu, and Pd NPs with FCC crystalline structure. Moreover, UV-visible absorption spectroscopy is applied to determine optical properties of the prepared samples which are affected by changes in surface morphology. The existence of single surface plasmon resonance (SPR) peak near 350 nm proves the formation of silver nanoparticles with a slight red shift through increasing deposition time. Ineffective thickness method (ITM) and Derivation of ineffective thickness method (DITM) are applied to extract optical band gap and transition type via absorption spectrum. SEM and AFM analyses show the distribution of near-spherical nanoparticles covering the surface of thin films. Furthermore, thickness variation affects the grain size. In addition, TEM image reveals the uniform size distribution of nanoparticles with an average particle size of about 15 nm. The findings show that increasing grain size and crystallite order along with the decrease of structural defect and disorders decrease optical band gap from 3.86 eV to 2.58 eV.

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in

2016-05-06

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with differentmore » deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.« less

Toxoplasma gondii Antigen-Pulsed-Dendritic Cell-Derived Exosomes Induce a Protective Immune Response against T. gondii Infection

PubMed Central

Aline, Fleur; Bout, Daniel; Amigorena, Sébastian; Roingeard, Philippe; Dimier-Poisson, Isabelle

2004-01-01

It was previously demonstrated that immunizing mice with spleen dendritic cells (DCs) that had been pulsed ex vivo with Toxoplasma gondii antigens triggers a systemic Th1-biased specific immune response and induces protection against infection. T. gondii can cause severe sequelae in the fetuses of mothers who acquire the infection during pregnancy, as well as life-threatening neuropathy in immunocompromised patients, in particular those with AIDS. Here, we investigate the efficacy of a novel cell-free vaccine composed of DC exosomes, which are secreted antigen-presenting vesicles that express functional major histocompatibility complex class I and II and T-cell-costimulatory molecules. They have already been shown to induce potent antitumor immune responses. We investigated the potential of DC2.4 cell line-derived exosomes to induce protective immunity against toxoplasmosis. Our data show that most adoptively transferred T. gondii-pulsed DC-derived exosomes were transferred to the spleen, elicited a strong systemic Th1-modulated Toxoplasma-specific immune response in vivo, and conferred good protection against infection. These findings support the possibility that DC-derived exosomes can be used for T. gondii immunoprophylaxis and for immunoprophylaxis against many other pathogens. PMID:15213158

Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

NASA Astrophysics Data System (ADS)

El hamali, S. O.; Cranton, W. M.; Kalfagiannis, N.; Hou, X.; Ranson, R.; Koutsogeorgis, D. C.

2016-05-01

High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10-3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10-4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.

Infrared control coating of thin film devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

Role of the blocking capacitor in control of ion energy distributions in pulsed capacitively coupled plasmas sustained in Ar/CF{sub 4}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Sang-Heon, E-mail: ssongs@umich.edu; Kushner, Mark J., E-mail: mjkush@umich.edu

2014-03-15

In plasma etching for microelectronics fabrication, the quality of the process is in large part determined by the ability to control the ion energy distribution (IED) onto the wafer. To achieve this control, dual frequency capacitively coupled plasmas (DF-CCPs) have been developed with the goal of separately controlling the magnitude of the fluxes of ions and radicals with the high frequency (HF) and the shape of the IED with the low frequency (LF). In steady state operation, plasma properties are determined by a real time balance between electron sources and losses. As such, for a given geometry, pressure, and frequencymore » of operation, the latitude for controlling the IED may be limited. Pulsed power is one technique being investigated to provide additional degrees of freedom to control the IED. In one configuration of a DF-CCP, the HF power is applied to the upper electrode and LF power is applied to the lower electrode which is serially connected to a blocking capacitor (BC) which generates a self dc-bias. In the steady state, the value of the dc-bias is, in fact, constant. During pulsed operation, however, there may be time modulation of the dc-bias which provides an additional means to control the IED. In this paper, IEDs to the wafer in pulsed DF-CCPs sustained in Ar/CF{sub 4}/O{sub 2} are discussed with results from a two-dimensional plasma hydrodynamics model. The IED can be manipulated depending on whether the LF or HF power is pulsed. The dynamic range of the control can be tuned by the dc-bias generated on the substrate, whose time variation depends on the size of the BC during pulsed operation. It was found that high energy ions can be preferentially produced when pulsing the HF power and low energy ions are preferentially produced when pulsing the LF power. A smaller BC value which allows the bias to follow the change in charged particle fluxes produces a larger dynamic range with which to control IEDs.« less

Gas metal arc weldability of 1.5 GPa grade martensitic steels

NASA Astrophysics Data System (ADS)

Hwang, Insung; Yun, Hyeonsang; Kim, Dongcheol; Kang, Munjin; Kim, Young-Min

2018-01-01

The gas metal arc weldability of 1.5 GPa grade martensitic (MART) steel was evaluated using both inverter direct current (DC) and DC pulse power type welders, under conditions of different welding currents, welding speeds, and shielding gasses. By investigating the bead appearance, tensile strength, and arc stability, it was determined that DC pulse power is better than inverter DC power for arc welding of 1.3 mm thick 1.5 GPa grade MART steel. Further, from the results of the weldability for various shielding gases, it was determined that mixed shielding gas is more effective for welding 1.5 GPa grade MART steel than is pure inert gas (Ar) or active (CO2) gas. In the case of pure shielding gas, no sound bead was formed under any conditions. However, when the mixed shielding gas was used, sound and fine beads were obtained.

Reduction of Secondary Flow in Inclined Orifice Pulse Tubes by Addition of DC Flow

NASA Astrophysics Data System (ADS)

Shiraishi, M.; Fujisawa, Y.; Murakami, M.; Nanako, A.

2004-06-01

The effect of using a second orifice valve to reduce convective losses caused by gravity-driven convective secondary flow in inclined orifice pulse tube refrigerators was investigated. The second orifice valve was installed between a reservoir and a low-pressure line of a compressor. When the valve was open, an additional DC flow directed to the hot end of the refrigerator was generated to counterbalance the convective secondary flow in the core region by opening the valve. Experimental results indicated that with increasing additional DC flow to an optimum level, the convective secondary flow decreased and the cooling performance improved, although further increase of the DC flow over the level caused the cooling performance to degrade. In summary, the second orifice valve was effective in reducing both the convective losses without affecting the cooling performance at an inclination angle < 70° where convective losses were negligibly small.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

NASA Astrophysics Data System (ADS)

Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

2015-08-01

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, N.; Department of Electrical and Computer Engineering, MSC01 1100, University of New Mexico, Albuquerque, New Mexico 87131-0001; Branch, D. W.

2015-08-15

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5more » μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

DOE PAGES

Patel, N.; Branch, D. W.; Schamiloglu, E.; ...

2015-08-11

A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO 3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses tomore » both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Epstein-Barr virus-transformed B-cells as efficient antigen presenting cells to propagate Aspergillus-specific cytotoxic T-lymphocytes.

PubMed

Ramadan, Gamal

2008-01-01

To overcome the cytotoxic T-lymphocytes (CTL) expansion limitations imposed by the lack of sufficient dendritic cells (DC) alternative sources of autologous antigen presenting cells (APC) such as Epstein-Barr virus (EBV)-transformed B-lymphoblastoid cell lines (BLCL), which are easy to establish in vitro, have been considered and studied in the present work. Non-adherent peripheral blood mononuclear cells of three healthy donors were repeatedly primed with autologous Aspergillus fumigatus commercial culture-filtrate antigen-pulsed fast monocyte-derived DC (Aspf-CFA-DC) alone, Aspf-CFA-pulsed BLCL (Aspf-CFA-BLCL) alone or Aspf-CFA-BLCL after one, two, or three primings with Aspf-CFA-DC (1DC/BLCL, 2DC/BLCL or 3DCIBLCL; respectively). After 5th priming, lines generated by Aspf-CFA-BLCL only showed strong/weak lytic activity for EBV/Aspf; respectively. Aspf-specific lytic activity in all donors was increased by increasing the number of primings with Aspf-CFA-DC before switching to Aspf-CFA-BLCL (18.20 +/- 1.65% versus 35.67 +/- 1.02% and 40.03 +/- 1.41% in bulk cultures generated by 1DC/BLCL versus 2DC/BLCL and 3DC/BLCL, respectively). Bulk cultures generated by Aspf-CFA-BLCL after at least two primings with Aspf-CFA-DC showed approximately the same Aspf-specific lytic activity, effector cell phenotype, expansion level and percentage expression of IFN-gamma, CD69 and CD107a without any significant differences (p > 0.05) as standard bulk cultures generated by only Aspf-CFA-DC. Thus, this study explored the use of a combined DC/BLCL protocol to establish/propagate Aspf-specific CTL for adoptive immunotherapy to prevent or treat invasive pulmonary aspergillosis.

Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitelaru, Catalin; National Institute for Optoelectronics, Magurele-Bucharest, RO 077125; Lundin, Daniel

2013-09-02

The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuchen; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Zhou, Xue

2016-01-18

We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

Flexible OLED fabrication with ITO thin film on polymer substrate

NASA Astrophysics Data System (ADS)

Kim, Sung Il; Lee, Kyo Woong; Bhusan Sahu, Bibhuti; Geon Han, Jeon

2015-09-01

This paper reports the synthesis of flexible indium tin oxide (ITO) films in a dual pulse magnetron sputtering (DPMS) system at low temperature (<100 °C) deposition condition. This study also presents experimental demonstration of the ITO films for their possible use in the fabrication of organic light emitting diode (OLED) device, and the device performance on the super polycarbonate substrates. The presented data reveals the feasibility of ITO films, with a very low sheet resistance of ∼30 Ω/□ and high transmittance of ∼88% at 550 nm, simply by the magnetron pulse mode operations with increasing pulse frequency from 0 to 50 kHz.

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Mitsuo; Hatakeyama, Tetsuo; Iwahashi, Yohei; Hayashi, Mariko; Okamoto, Dai; Yano, Hiroshi; Harada, Shinsuke; Yonezawa, Yoshiyuki; Okumura, Hajime

2018-04-01

We investigated methods of measuring the threshold voltage (V th) shift of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under positive DC, negative DC, and AC gate bias stresses. A fast measurement method for V th shift under both positive and negative DC stresses revealed the existence of an extremely large V th shift in the short-stress-time region. We then examined the effect of fast V th shifts on drain current (I d) changes within a pulse under AC operation. The fast V th shifts were suppressed by nitridation. However, the I d change within one pulse occurred even in commercially available SiC MOSFETs. The correlation between I d changes within one pulse and V th shifts measured by a conventional method is weak. Thus, a fast and in situ measurement method is indispensable for the accurate evaluation of I d changes under AC operation.

Preparation of magnetron sputtered ZrO2 films on Si for gate dielectric application

NASA Astrophysics Data System (ADS)

Kondaiah, P.; Mohan Rao, G.; Uthanna, S.

2012-11-01

Zirconium oxide (ZrO2) thin films were deposited on to p - Si and quartz substrates by sputtering of zirconium target at an oxygen partial pressure of 4x10-2 Pa and sputter pressure of 0.4 Pa by using DC reactive magnetron sputtering technique. The effect of annealing temperature on structural, optical, electrical and dielectric properties of the ZrO2 films was systematically studied. The as-deposited films were mixed phases of monoclinic and orthorhombic ZrO2. As the annealing temperature increased to 1073 K, the films were transformed in to single phase orthorhombic ZrO2. Fourier transform infrared studies conform the presence of interfacial layer between Si and ZrO2. The optical band gap and refractive index of the as-deposited films were 5.82 eV and 1.81. As the annealing temperature increased to 1073 K the optical band gap and refractive index increased to 5.92 eV and 2.10 respectively. The structural changes were influenced the capacitance-voltage and current-voltage characteristics of Al/ZrO2/p-Si capacitors. The dielectric constant was increased from 11.6 to 24.5 and the leakage current was decreased from 1.65×10-7 to 3.30×10-9 A/ cm2 for the as-deposited and annealed at 1073 K respectively.

Radiation detector spectrum simulator

DOEpatents

Wolf, Michael A.; Crowell, John M.

1987-01-01

A small battery operated nuclear spectrum simulator having a noise source nerates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith generates several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

Radiation detector spectrum simulator

DOEpatents

Wolf, M.A.; Crowell, J.M.

1985-04-09

A small battery operated nuclear spectrum simulator having a noise source generates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith to generate several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

Effects of surface tension and viscosity on gold and silver sputtered onto liquid substrates

NASA Astrophysics Data System (ADS)

De Luna, Mark M.; Gupta, Malancha

2018-05-01

In this paper, we study DC magnetron sputtering of gold and silver onto liquid substrates of varying viscosities and surface tensions. We were able to separate the effects of viscosity from surface tension by depositing the metals onto silicone oils with a range of viscosities. The effects of surface tension were studied by depositing the metals onto squalene, poly(ethylene glycol), and glycerol. It was found that dispersed nanoparticles were formed on liquids with low surface tension and low viscosity whereas dense films were formed on liquids with low surface tension and high viscosity. Nanoparticles were formed on both the liquid surface and within the bulk liquid for high surface tension liquids. Our results can be used to tailor the metal and liquid interaction to fabricate particles and films for various applications in optics, electronics, and catalysis.

The CARIBU EBIS control and synchronization system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Clayton, E-mail: cdickerson@anl.gov; Peters, Christopher, E-mail: cdickerson@anl.gov

2015-01-09

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. Themore » control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.« less

Controllable in vivo hyperthermia effect induced by pulsed high intensity focused ultrasound with low duty cycles

PubMed Central

Tu, Juan; Ha Hwang, Joo; Chen, Tao; Fan, Tingbo; Guo, Xiasheng; Crum, Lawrence A.; Zhang, Dong

2012-01-01

High intensity focused ultrasound (HIFU)-induced hyperthermia is a promising tool for cancer therapy. Three-dimensional nonlinear acoustic-bioheat transfer-blood flow-coupling model simulations and in vivo thermocouple measurements were performed to study hyperthermia effects in rabbit auricular vein exposed to pulsed HIFU (pHIFU) at varied duty cycles (DCs). pHIFU-induced temperature elevations are shown to increase with increasing DC. A critical DC of 6.9% is estimated for temperature at distal vessel wall exceeding 44 °C, although different tissue depths and inclusions could affect the DC threshold. The results demonstrate clinic potentials of achieving controllable hyperthermia by adjusting pHIFU DCs, while minimizing perivascular thermal injury. PMID:23112347

Development and performance of pulse-width-modulated static inverter and converter modules

NASA Technical Reports Server (NTRS)

Pittman, P. F.; Gourash, F.; Birchenough, A. G.; Pittman, P. F.; Ravas, R. J.; Hall, W. G.

1971-01-01

Pulse-width-modulated inverter and converter modules are being developed for modular aerospace electrical power systems. The modules, rate 2.5 kilowatts per module and 10-minute - 150-percent overload, operate from 56 volts dc. The converter module provides two output voltages: a nominal link voltage of 200 volts dc when used with the inverter, and 150 volts dc to a load bus when used separately. The inverter module output is 400-hertz, sinusoidal, three-phase, 120/208 volts. Tests of breadboard models with standard parts and integrated circuits show rated power efficiencies of 71.4 and 85.1 percent and voltage regulation of 5 and 3.1 percent for inverter and converter modules, respectively. Sine-wave output distortion is 0.74 percent.

Modeling carbonaceous particle formation in an argon graphite cathode dc discharge

NASA Astrophysics Data System (ADS)

Michau, A.; Lombardi, G.; Colina Delacqua, L.; Redolfi, M.; Arnas, C.; Bonnin, X.; Hassouni, K.

2010-12-01

We develop a model for the nucleation, growth and transport of carbonaceous dust particles in a non-reactive gas dc discharge where the carbon source is provided by cathode sputtering. We consider only the initial phase of the discharge when the dust charge density remains small with respect to the electron density. We find that an electric field reversal at the entrance of the negative glow region promotes trapping of negatively charged clusters and dust particles, confining them for long times in the plasma and favoring molecular growth. An essential ingredient for this process is electron attachment, which negatively charges the initially neutral clusters. We perform sensitivity studies on several number parameters: size of the largest molecular edifice, sticking coefficient, etc.

Statistical characteristic in time-domain of direct current corona-generated audible noise from conductor in corona cage

NASA Astrophysics Data System (ADS)

Li, Xuebao; Cui, Xiang; Lu, Tiebing; Ma, Wenzuo; Bian, Xingming; Wang, Donglai; Hiziroglu, Huseyin

2016-03-01

The corona-generated audible noise (AN) has become one of decisive factors in the design of high voltage direct current (HVDC) transmission lines. The AN from transmission lines can be attributed to sound pressure pulses which are generated by the multiple corona sources formed on the conductor, i.e., transmission lines. In this paper, a detailed time-domain characteristics of the sound pressure pulses, which are generated by the DC corona discharges formed over the surfaces of a stranded conductors, are investigated systematically in a laboratory settings using a corona cage structure. The amplitude of sound pressure pulse and its time intervals are extracted by observing a direct correlation between corona current pulses and corona-generated sound pressure pulses. Based on the statistical characteristics, a stochastic model is presented for simulating the sound pressure pulses due to DC corona discharges occurring on conductors. The proposed stochastic model is validated by comparing the calculated and measured A-weighted sound pressure level (SPL). The proposed model is then used to analyze the influence of the pulse amplitudes and pulse rate on the SPL. Furthermore, a mathematical relationship is found between the SPL and conductor diameter, electric field, and radial distance.

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

PubMed Central

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-01-01

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications. PMID:26965073

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

DOE PAGES

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; ...

2016-03-11

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combinationmore » of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Ultimately, our results allow for improved safety during laser ablation in manufacturing and medical applications.« less

Effect of the target power density on high-power impulse magnetron sputtering of copper

NASA Astrophysics Data System (ADS)

Kozák, Tomáš

2012-04-01

We present a model analysis of high-power impulse magnetron sputtering of copper. We use a non-stationary global model based on the particle and energy conservation equations in two zones (the high density plasma ring above the target racetrack and the bulk plasma region), which makes it possible to calculate time evolutions of the averaged process gas and target material neutral and ion densities, as well as the fluxes of these particles to the target and substrate during a pulse period. We study the effect of the increasing target power density under conditions corresponding to a real experimental system. The calculated target current waveforms show a long steady state and are in good agreement with the experimental results. For an increasing target power density, an analysis of the particle densities shows a gradual transition to a metal dominated discharge plasma with an increasing degree of ionization of the depositing flux. The average fraction of target material ions in the total ion flux onto the substrate is more than 90% for average target power densities higher than 500 W cm-2 in a pulse. The average ionized fraction of target material atoms in the flux onto the substrate reaches 80% for a maximum average target power density of 3 kW cm-2 in a pulse.

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

NASA Astrophysics Data System (ADS)

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-03-01

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications.

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy.

PubMed

Hihath, Sahar; Santala, Melissa K; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-03-11

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications.

Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter.

PubMed

Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Ko Park, Sang-Hee; Jeon, Sanghun

2017-10-25

Amorphous oxide semiconductor-based thin film transistors (TFTs) have been considered as excellent switching elements for driving active-matrix organic light-emitting diodes (AMOLED) owing to their high mobility and process compatibility. However, oxide semiconductors have inherent defects, causing fast transient charge trapping and device instability. For the next-generation displays such as flexible, wearable, or transparent displays, an active semiconductor layer with ultrahigh mobility and high reliability at low deposition temperature is required. Therefore, we introduced high density plasma microwave-assisted (MWA) sputtering method as a promising deposition tool for the formation of high density and high-performance oxide semiconductor films. In this paper, we present the effect of the MWA sputtering method on the defects and fast charge trapping in In-Sn-Zn-O (ITZO) TFTs using various AC device characterization methodologies including fast I-V, pulsed I-V, transient current, low frequency noise, and discharge current analysis. Using these methods, we were able to analyze the charge trapping mechanism and intrinsic electrical characteristics, and extract the subgap density of the states of oxide TFTs quantitatively. In comparison to conventional sputtered ITZO, high density plasma MWA-sputtered ITZO exhibits outstanding electrical performance, negligible charge trapping characteristics and low subgap density of states. High-density plasma MWA sputtering method has high deposition rate even at low working pressure and control the ion bombardment energy, resulting in forming low defect generation in ITZO and presenting high performance ITZO TFT. We expect the proposed high density plasma sputtering method to be applicable to a wide range of oxide semiconductor device applications.

SPM analysis of fibrinogen adsorption on solid surfaces

NASA Astrophysics Data System (ADS)

Choukourov, A.; Grinevich, A.; Saito, N.; Takai, O.

2007-09-01

The adsorption kinetics, adhesion and orientation of human fibrinogen on solid surfaces have been studied by surface probe microscopy (SPM) and quartz crystal microbalance techniques (QCM). CF 3-, NH 2-terminated organo-silane self-assembled monolayers (SAM) and OH-terminated silicon dioxide have been used as model surfaces. Furthermore, the interaction of fibrinogen with nanocomposite Ti/hydrocarbon plasma polymer films (Ti/ppCH) deposited by dc magnetron sputtering has also been studied.

Negative DC corona discharge current characteristics in a flowing two-phase (air + suspended smoke particles) fluid

NASA Astrophysics Data System (ADS)

Berendt, Artur; Domaszka, Magdalena; Mizeraczyk, Jerzy

2017-04-01

The electrical characteristics of a steady-state negative DC corona discharge in a two-phase fluid (air with suspended cigarette smoke particles) flowing along a chamber with a needle-to-plate electrode arrangement were experimentally investigated. The two-phase flow was transverse in respect to the needle-to-plate axis. The velocity of the transverse two-phase flow was limited to 0.8 m/s, typical of the electrostatic precipitators. We found that three discharge current modes of the negative corona exist in the two-phase (air + smoke particles) fluid: the Trichel pulses mode, the "Trichel pulses superimposed on DC component" mode and the DC component mode, similarly as in the corona discharge in air (a single-phase fluid). The shape of Trichel pulses in the air + suspended particles fluid is similar to that in air. However, the Trichel pulse amplitudes are higher than those in "pure" air while their repetition frequency is lower. As a net consequence of that the averaged corona discharge current in the two-phase fluid is lower than in "pure" air. It was also found that the average discharge current decreases with increasing suspended particle concentration. The calculations showed that the dependence of the average negative corona current (which is a macroscopic corona discharge parameter) on the particle concentration can be explained by the particle-concentration dependencies of the electric charge of Trichel pulse and the repetition frequency of Trichel pulses, both giving a microscopic insight into the electrical phenomena in the negative corona discharge. Our investigations showed also that the average corona discharge current in the two-phase fluid is almost unaffected by the transverse fluid flow up to a velocity of 0.8 m/s. Contribution to the topical issue "The 15th International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE XV)", edited by Nicolas Gherardi and Tomáš Hoder

Ventilation-Induced Modulation of Pulse Oximeter Waveforms: A Method for the Assessment of Early Changes in Intravascular Volume During Spinal Fusion Surgery in Pediatric Patients.

PubMed

Alian, Aymen A; Atteya, Gourg; Gaal, Dorothy; Golembeski, Thomas; Smith, Brian G; Dai, Feng; Silverman, David G; Shelley, Kirk

2016-08-01

Scoliosis surgery is often associated with substantial blood loss, requiring fluid resuscitation and blood transfusions. In adults, dynamic preload indices have been shown to be more reliable for guiding fluid resuscitation, but these indices have not been useful in children undergoing surgery. The aim of this study was to introduce frequency-analyzed photoplethysmogram (PPG) and arterial pressure waveform variables and to study the ability of these parameters to detect early bleeding in children during surgery. We studied 20 children undergoing spinal fusion. Electrocardiogram, arterial pressure, finger pulse oximetry (finger PPG), and airway pressure waveforms were analyzed using time domain and frequency domain methods of analysis. Frequency domain analysis consisted of calculating the amplitude density of PPG and arterial pressure waveforms at the respiratory and cardiac frequencies using Fourier analysis. This generated 2 measurements: The first is related to slow mean arterial pressure modulation induced by ventilation (also known as DC modulation when referring to the PPG), and the second corresponds to pulse pressure modulation (AC modulation or changes in the amplitude of pulse oximeter plethysmograph when referring to the PPG). Both PPG and arterial pressure measurements were divided by their respective cardiac pulse amplitude to generate DC% and AC% (normalized values). Standard hemodynamic data were also recorded. Data at baseline and after bleeding (estimated blood loss about 9% of blood volume) were presented as median and interquartile range and compared using Wilcoxon signed-rank tests; a Bonferroni-corrected P value <0.05 was considered statistically significant. There were significant increases in PPG DC% (median [interquartile range] = 359% [210 to 541], P = 0.002), PPG AC% (160% [87 to 251], P = 0.003), and arterial DC% (44% [19 to 84], P = 0.012) modulations, respectively, whereas arterial AC% modulations showed nonsignificant increase (41% [1 to 85], P = 0.12). The change in PPG DC% was significantly higher than that in PPG AC%, arterial DC%, arterial AC%, and systolic blood pressure with P values of 0.008, 0.002, 0.003, and 0.002, respectively. Only systolic blood pressure showed significant changes (11% [4 to 21], P = 0.003) between bleeding phase and baseline. Finger PPG and arterial waveform parameters (using frequency analysis) can track changes in blood volume during the bleeding phase, suggesting the potential for a noninvasive monitor for tracking changes in blood volume in pediatric patients. PPG waveform baseline modulation (PPG DC%) was more sensitive to changes in venous blood volume when compared with respiration-induced modulation seen in the arterial pressure waveform.

Adaptation of a 3-D Quadrupole Ion Trap for Dipolar DC Collisional Activation

PubMed Central

Prentice, Boone M.; Santini, Robert E.; McLuckey, Scott A.

2011-01-01

Means to allow for the application of a dipolar DC pulse to the end-cap electrodes of a three-dimensional (3-D) quadrupole ion trap for as short as a millisecond to as long as hundreds of milliseconds are described. The implementation of dipolar DC does not compromise the ability to apply AC waveforms to the end-cap electrodes at other times in the experiment. Dipolar DC provides a nonresonant means for ion acceleration by displacing ions from the center of the ion trap where they experience stronger rf electric fields, which increases the extent of micro-motion. The evolution of the product ion spectrum to higher generation products with time, as shown using protonated leucine enkephalin as a model protonated peptide, illustrates the broad-band nature of the activation. Dipolar DC activation is also shown to be effective as an ion heating approach in mimicking high amplitude short time excitation (HASTE)/pulsed Q dissociation (PQD) resonance excitation experiments that are intended to enhance the likelihood for observing low m/z products in ion trap tandem mass spectrometry. PMID:21953251

Technique of electrical stimulation of the vestibular analyzer under clinical conditions

NASA Technical Reports Server (NTRS)

Khechinashvili, S. N.; Zargaryan, B. M.; Karakozov, K. G.

1980-01-01

Vestibular reactions appear under the action of direct current (dc) on the labyrinth of man and animals. A decrease of the stimulation effect of dc on the extralabyrinthine nervous formations in the suggested method is achieved by the use of electric pulses with steep front and back parts, as well as by previous anesthetization of the skin in the electrode application area by means of novocain solution electrophoresis. For this purpose a pulse producer giving trapezoid pulses with smoothly changing fronts and duration was constructed. With the help of an interrupter it is possible to stop the current increase instantly, and stimulation is performed at the level of the pulse 'plateau'. To induce vestibular reactions under monopolar stimulation, it is necessary to apply the current twice as high as that with bipolar electrode position. The use of short pulses with steep front and back parts for electrode stimulation of the vestibular analyzer is considered to be inexpedient.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Synthesis and characteristics of Ag/Pt bimetallic nanocomposites by arc-discharge solution plasma processing.

PubMed

Pootawang, Panuphong; Saito, Nagahiro; Takai, Osamu; Lee, Sang-Yul

2012-10-05

Arc discharge in solution, generated by applying a high voltage of unipolar pulsed dc to electrodes of Ag and Pt, was used as a method to form Ag/Pt bimetallic nanocomposites via electrode erosion by the effects of the electric arc at the cathode (Ag rod) and the sputtering at the anode (Pt rod). Ag/Pt bimetallic nanocomposites were formed as colloidal particles dispersed in solution via the reduction of hydrogen radicals generated during discharge without the addition of chemical precursor or reducing agent. At a discharge time of 30 s, the fine bimetallic nanoparticles with a mean particle size of approximately 5 nm were observed by transmission electron microscopy (TEM). With increasing discharge time, the bimetallic nanoparticle size tended to increase by forming an agglomeration. The presence of the relatively small amount of Pt dispersed in the Ag matrix could be observed by the analytical mapping mode of energy-dispersive x-ray spectroscopy and high-resolution TEM. This demonstrated that the synthesized particle was in the form of a nanocomposite. No contamination of other chemical substances was detected by x-ray photoelectron spectroscopy. Hence, solution plasma could be a clean and simple process to effectively synthesize Ag/Pt bimetallic nanocomposites and it is expected to be widely applicable in the preparation of several types of nanoparticle.

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Peipei; Yang, Xu; Li, Hui

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CNmore » emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.« less

Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy.

PubMed

Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

2018-04-05

This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2kV and a power supply system equipped with 25/50μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp 3 /sp 2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp 3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp 3 /sp 2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp 3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed. Copyright © 2018 Elsevier B.V. All rights reserved.

Effective switching frequency multiplier inverter

DOEpatents

Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

2007-08-07

A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

High Current, Multi-Filament Photoconductive Semiconductor Switching

DTIC Science & Technology

2011-06-01

linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

Variable-pulse switching circuit accurately controls solenoid-valve actuations

NASA Technical Reports Server (NTRS)

Gillett, J. D.

1967-01-01

Solid state circuit generating adjustable square wave pulses of sufficient power operates a 28 volt dc solenoid valve at precise time intervals. This circuit is used for precise time control of fluid flow in combustion experiments.

Investigation on the structural characterization of pulsed p-type porous silicon

NASA Astrophysics Data System (ADS)

Wahab, N. H. Abd; Rahim, A. F. Abd; Mahmood, A.; Yusof, Y.

2017-08-01

P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm2 for 30 minutes from a crystalline silicon wafer with (100) orientation. For the PC process, the current was supplied through a pulse generator with 14 ms cycle time (T) with 10 ms on time (Ton) and pause time (Toff) of 4 ms respectively. FESEM, EDX, AFM, and XRD have been used to characterize the morphological properties of the PS. FESEM images showed that pulse PS (PPC) sample produces more uniform circular structures with estimated average pore sizes of 42.14 nm compared to DC porous (PDC) sample with estimated average size of 16.37nm respectively. The EDX spectrum for both samples showed higher Si content with minimal presence of oxide.

Effects of varying duty cycle and pulse width on high-intensity focused ultrasound (HIFU)-induced transcranial thrombolysis.

PubMed

Hölscher, Thilo; Raman, Rema; Fisher, David J; Ahadi, Golnaz; Zadicario, Eyal; Voie, Arne

2013-01-01

The goal was to test the effects of various combinations of pulse widths (PW) and duty cycles (DC) on high-intensity focused ultrasound (HIFU)-induced sonothrombolysis efficacy using an in vitro flow model. An ExAblate™ 4000 HIFU headsystem (InSightec, Inc., Israel) was used. Artificial blood clots were placed into test tubes inside a human calvarium and exposed to pulsatile flow. Four different duty cycles were tested against four different pulse widths. For all study groups, an increase in thrombolysis efficacy could be seen in association with increasing DC and/or PW (p < 0.0001). Using transcranial HIFU, significant thrombolysis can be achieved within seconds and without the use of lytic drugs in vitro. Longer duty cycles in combination with longer pulse widths seem to have the highest potential to optimize clot lysis efficacy.

Effects of varying duty cycle and pulse width on high-intensity focused ultrasound (HIFU)-induced transcranial thrombolysis

PubMed Central

2013-01-01

The goal was to test the effects of various combinations of pulse widths (PW) and duty cycles (DC) on high-intensity focused ultrasound (HIFU)-induced sonothrombolysis efficacy using an in vitro flow model. An ExAblate™ 4000 HIFU headsystem (InSightec, Inc., Israel) was used. Artificial blood clots were placed into test tubes inside a human calvarium and exposed to pulsatile flow. Four different duty cycles were tested against four different pulse widths. For all study groups, an increase in thrombolysis efficacy could be seen in association with increasing DC and/or PW (p < 0.0001). Using transcranial HIFU, significant thrombolysis can be achieved within seconds and without the use of lytic drugs in vitro. Longer duty cycles in combination with longer pulse widths seem to have the highest potential to optimize clot lysis efficacy. PMID:25512862

Voltage source ac-to-dc converters for high-power transmitters

NASA Technical Reports Server (NTRS)

Cormier, R.

1990-01-01

This work was done to optimize the design of the components used for the beam power supply, which is a component of the transmitters in the Deep Space Network (DSN). The major findings are: (1) the difference in regulation between a six-pulse and a twelve-pulse converter is at most 7 percent worse for the twelve-pulse converter; (2) the commutation overlap angle of a current source converter equals that of a voltage source converter with continuous line currents; (3) the sources of uncharacteristic harmonics are identified with SPICE simulation; (4) the use of an imperfect phase-shifting transformer for the twelve-pulse converter generates a harmonic at six times the line frequency; and (5) the assumptions usually made in analyzing converters can be relaxed with SPICE simulation. The results demonstrate the suitability of using SPICE simulation to obtain detailed performance predictions of ac-to-dc converters.

NSTAR Extended Life Test Discharge Chamber Flake Analysis

NASA Technical Reports Server (NTRS)

deGroh, Kim K.; Banks, Bruce A.; Karniotis, Christina A.

2005-01-01

The Extended Life Test (ELT) of the NASA Solar Electric Propulsion Technology Readiness (NSTAR) ion thruster was concluded after 30,352 hours of operation. The ELT was conducted using the Deep Space 1 (DS1) back-up flight engine, a 30 cm diameter xenon ion thruster. Post-test inspection of the ELT engine revealed numerous contaminant flakes distributed over the bottom of the cylindrical section of the anode within the discharge chamber (DC). Extensive analyses were conducted to determine the source of the particles, which is critical to the understanding of degradation mechanisms of long life ion thruster operation. Analyses included: optical microscopy (OM) and particle length histograms, field emission scanning electron microscopy (FESEM) combined with energy dispersive spectroscopy (EDS), and atomic oxygen plasma exposure tests. Analyses of the particles indicate that the majority of the DC flakes consist of a layered structure, typically with either two or three layers. The flakes comprising two layers were typically found to have a molybdenum-rich (Mo-rich) layer on one side and a carbon-rich (C-rich) layer on the other side. The flakes comprising three layers were found to be sandwich-like structures with Mo-rich exterior layers and a C-rich interior layer. The presence of the C-rich layers indicates that these particles were produced by sputter deposition build-up on a surface external to the discharge chamber from ion sputter erosion of the graphite target in the test chamber. This contaminant layer became thick enough that particles spalled off, and then were electro-statically attracted into the ion thruster interior, where they were coated with Mo from internal sputter erosion of the screen grid and cathode components. Atomic oxygen tests provided evidence that the DC chamber flakes are composed of a significant fraction of carbon. Particle size histograms further indicated that the source of the particles was spalling of carbon flakes from downstream surfaces. Analyses of flakes taken from the downstream surface of the accelerator grid provided additional supportive information. The production of the downstream carbon flakes, and hence the potential problems associated with the flake particles in the ELT ion thruster engine is a facility induced effect and would not occur in the space environment.

A hypoallergenic variant of the major birch pollen allergen shows distinct characteristics in antigen processing and T-cell activation.

PubMed

Kitzmüller, C; Wallner, M; Deifl, S; Mutschlechner, S; Walterskirchen, C; Zlabinger, G J; Ferreira, F; Bohle, B

2012-11-01

BM4 is a novel genetically engineered variant of the major birch pollen allergen Bet v 1 that lacks the typical Bet v 1-like fold and displays negligible IgE-binding but strong T cell-activating capacity. The aim of this study was to elucidate possible differences between BM4 and Bet v 1 in internalization, antigen processing, and presentation. Proliferative responses to BM4 and Bet v 1 of peripheral blood mononuclear cells and Bet v 1-specific T-cell clones were compared. Fluorescently labeled BM4 and Bet v 1 were used to study surface binding, endocytosis, and intracellular degradation by monocyte-derived DC (mdDC). Both proteins were digested by endolysosomal extracts of mdDC. BM4- and Bet v 1-pulsed mdDC were employed to assess the kinetics of activation of Bet v 1-specific T-cell clones and the polarization of naïve T cells. BM4 displayed a significantly stronger T cell-activating capacity than Bet v 1. Furthermore, BM4 showed increased surface binding and internalization as well as faster endolysosomal degradation compared with Bet v 1. BM4-pulsed mdDC induced enhanced proliferative responses at earlier time-points in Bet v 1-specific T-cell clones and promoted less IL-5 production in T cells than Bet v 1-pulsed mdDC. The loss of the Bet v 1-fold changes the protein's interaction with the human immune system at the level of antigen-presenting cells resulting in altered T-cell responses. By combining low IgE-binding with strong and modulating T cell-activating capacity, BM4 represents a highly interesting candidate for specific immunotherapy of birch pollen allergy. © 2012 John Wiley & Sons A/S.

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier.

PubMed

Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G

2014-10-06

We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Reversible phase transition in vanadium oxide films sputtered on metal substrates

NASA Astrophysics Data System (ADS)

Palai, Debajyoti; Carmel Mary Esther, A.; Porwal, Deeksha; Pradeepkumar, Maurya Sandeep; Raghavendra Kumar, D.; Bera, Parthasarathi; Sridhara, N.; Dey, Arjun

2016-11-01

Vanadium oxide films, deposited on aluminium (Al), titanium (Ti) and tantalum (Ta) metal substrates by pulsed RF magnetron sputtering at a working pressure of 1.5 x10-2 mbar at room temperature are found to display mixed crystalline vanadium oxide phases viz., VO2, V2O3, V2O5. The films have been characterized by field-emission scanning electron microscopy, X-ray diffraction, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy, and their thermo-optical and electrical properties have been investigated. Studies of the deposited films by DSC have revealed a reversible-phase transition found in the temperature range of 45-49 °C.

Beneficial effect of Cu on Ti-Nb-Ta-Zr sputtered uniform/adhesive gum films accelerating bacterial inactivation under indoor visible light.

PubMed

Alhussein, Akram; Achache, Sofiane; Deturche, Regis; Sanchette, Frederic; Pulgarin, Cesar; Kiwi, John; Rtimi, Sami

2017-04-01

This article presents the evidence for the significant effect of copper accelerating the bacterial inactivation on Ti-Nb-Ta-Zr (TNTZ) sputtered films on glass up to a Cu content of 8.3 at.%. These films were deposited by dc magnetron co-sputtering of an alloy target Ti-23Nb-0.7Ta-2Zr (at.%) and a Cu target. The fastest bacterial inactivation of E. coli on this later TNTZ-Cu surface proceeded within ∼75min. The films deposited by magnetron sputtering are chemically homogenous. The film roughness evaluated by atomic force spectroscopy (AFM) on the TNTZ-Cu 8.3 at.% Cu sample presented an RMS-value of 20.1nm being the highest RMS of any Cu-sputtered TNTZ sample. The implication of the RMS value found for this sample leading to the fastest interfacial bacterial inactivation kinetics is also discussed. Values for the Young's modulus and hardness are reported for the TNTZ films in the presence of various Cu-contents. Evaluation of the bacterial inactivation kinetics of E. coli under low intensity actinic hospital light and in the dark was carried out. The stable repetitive bacterial inactivation was consistent with the extremely low Cu-ion release from the samples of 0.4 ppb. Evidence is presented by the bacterial inactivation dependence on the applied light intensity for the intervention of Cu as semiconductor CuO during the bacterial inactivation at the TNTZ-Cu interface. The mechanism of CuO-intervention under light is suggested based on the pH/and potential changes registered during bacterial disinfection. Copyright © 2017 Elsevier B.V. All rights reserved.

Retention of Sputtered Molybdenum on Ion Engine Discharge Chamber Surfaces

NASA Technical Reports Server (NTRS)

Sovey, James S.; Dever, Joyce A.; Power, John L.

2001-01-01

Grit-blasted anode surfaces are commonly used in ion engines to ensure adherence of sputtered coatings. Next generation ion engines will require higher power levels, longer operating times, and thus there will likely be thicker sputtered coatings on their anode surfaces than observed to date on 2.3 kW-class xenon ion engines. The thickness of coatings on the anode of a 10 kW, 40-centimeter diameter thruster, for example, may be 22 micrometers or more after extended operation. Grit-blasted wire mesh, titanium, and aluminum coupons were coated with molybdenum at accelerated rates to establish coating stability after the deposition process and after thermal cycling tests. These accelerated deposition rates are roughly three orders of magnitude more rapid than the rates at which the screen grid is sputtered in a 2.3 kW-class, 30-centimeter diameter ion engine. Using both RF and DC sputtering processes, the molybdenum coating thicknesses ranged from 8 to 130 micrometers, and deposition rates from 1.8 micrometers per hour to 5.1 micrometers per hour. In all cases, the molybdenum coatings were stable after the deposition process, and there was no evidence of spalling of the coatings after 20 cycles from about -60 to +320 C. The stable, 130 micrometer molybdenum coating on wire mesh is 26 times thicker than the thickest coating found on the anode of a 2.3 kW, xenon ion engine that was tested for 8200 hr. Additionally, this coating on wire mesh coupon is estimated to be a factor of greater than 4 thicker than one would expect to obtain on the anode of the next generation ion engine which may have xenon throughputs as high as 550 kg.

Cavitation enhances coagulated size during pulsed high-intensity focussed ultrasound ablation in an isolated liver perfusion system.

PubMed

Zhao, Lu-Yan; Liu, Shan; Chen, Zong-Gui; Zou, Jian-Zhong; Wu, Feng

2016-11-24

To investigate whether cavitation enhances the degree of coagulation during pulsed high-intensity focussed ultrasound (HIFU) in an isolated liver perfusion system. Isolated liver was treated by pulsed HIFU or continuous-wave HIFU with different portal vein flow rates. The cavitation emission during exposure was recorded, and real-time ultrasound images were used to observe changes in the grey scale. The coagulation size was measured and calculated. HIFU treatment led to complete coagulation necrosis and total cell destruction in the target regions. Compared to exposure at a duty cycle (DC) of 100%, the mean volumes of lesions induced by 6 s exposure at DCs of 50% and 10% were significantly larger (P < .01) but were smaller at a DC of 5%. The necrosis volume was negatively related to the perfusion rate in the pulsed HIFU at a DC of 50% for exposure durations of 4 and 6 s, while the perfusion flow rate did not affect the necrosis volume for exposure durations of 1, 2 and 3 s. For increased perfusion flow rates, there was no significant decrease in the cavitation activity for the pulsed-HIFU (P > .05). For continuous-wave HIFU exposure, there was a significant decrease in the necrosis volume and cavitation activity for exposure times of 1, 2, 3, 4, and 6 s with increasing portal perfusion rates. Perfusion flow rates negatively influence cavitation activity and coagulation volume. Ablation is significantly enhanced during pulsed HIFU exposure compared with continuous-wave HIFU.

[Removal of SO2 from flue gas by water vapor DC corona discharge].

PubMed

Sun, Ming; Wu, Yan

2006-07-01

The influence of several factors on removal rate of SO2 from flue gas in unsaturated water vapor DC corona discharge was researched. Furthermore, the experiments of the removal rate of SO2 in pulsed discharge increased by water vapor DC corona discharge plasma were conducted. The experiment system is supplied with multi-nozzle-plate electrodes and the flow of simulated flue gas is under 70 m3/h. The results show that removal rate of SO2 can be improved by increasing the concentration of water vapor, intensity of electric field or decreasing flow of simulated flue gas. In unsaturated water vapor DC corona discharge, removal rate of SO2 can be improved by 10%, when NH3 is added as NH3 and SO2 is in a mole ratio of two to one, it can reach 60%. The removal rate of SO2 can be increased by 5% in pulsed corona discharge and reach above 90%.

Model and Subcomponent Development for a Pulse-Combustor-Driven Microgenerator

DTIC Science & Technology

2004-08-31

sputtering of thin magnetic and dielectric layers [4]; and mechanical lamination of polymer -coated NiFe foils [5]. Although these approaches have...photomicrograph of the fabricated device is given in Figure 4.2-6. 3d solenoid- like Cu coil EPOXY SU8 NIFE LAMINATE D CORE Figure 4.2-6 Photomicrograph

Structural, optical and photo-catalytic activity of nanocrystalline NiO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Ghamdi, Attieh A.; Abdel-wahab, M. Sh., E-mail: mshabaan90@yahoo.com; Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University, Beni-Suef

2016-03-15

Highlights: • Synthesis of nanocrystalline NiO thin films with different thicknesses using DC magnetron sputtering technique. • Effect of film thickness and particle size on photo-catalytic degradation of methyl green dye under UV light was studied. • The deposited NiO thin films are efficient, stable and possess high photo-catalytic activity upon reuse. - Abstract: Physical deposition of nanocrystalline nickel oxide (NiO) thin films with different thickness 30, 50 and 80 nm have been done on glass substrate by DC magnetron sputtering technique and varying the deposition time from 600, 900 to 1200 s. The results of surface morphology and opticalmore » characterization of these films obtained using different characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), photoluminescence (PL) and UV–vis spectrophotometry provide important information like formation of distinct nanostructures in different films and its effect on their optical band gap which has decreased from 3.74 to 3.37 eV as the film thickness increases. Most importantly these films have shown very high stability and a specialty to be recycled without much loss of their photo-catalytic activity, when tested as photo-catalysts for the degradation of methyl green dye (MG) from the wastewater under the exposure of 18 W energy of UV lamp.« less

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2016-08-01

We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

2017-02-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

Stress controlled pulsed direct current co-sputtered Al{sub 1−x}Sc{sub x}N as piezoelectric phase for micromechanical sensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fichtner, Simon, E-mail: sif@tf.uni-kiel.de; Reimer, Tim; Chemnitz, Steffen

2015-11-01

Scandium alloyed aluminum nitride (Al{sub 1−x}Sc{sub x}N) thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x ≤ 0.37. A significant improvement of the clamped transversal piezoelectric response to strain e{sub 31,f} from −1.28 C/m{sup 2} to −3.01 C/m{sup 2} was recorded, while dielectric constant and loss angle remain low. Further, the built-in stress level of Al{sub 1−x}Sc{sub x}N was found to be tuneable by varying pressure, Ar/N{sub 2} ratio, and Sc content. The thus resulting enhancement of the expectable signal to noise ratio by a factor of 2.1 and the abilitymore » to control built-in stress make the integration of Al{sub 1−x}Sc{sub x}N as the piezoelectric phase of micro-electro-mechanical system sensor applications highly attractive.« less

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, Mark D., E-mail: martu@ifm.liu.se; Broitman, Esteban; Näslund, Lars-Åke

Carbon and carbon nitride films (CN{sub x}, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CN{sub x} films, was observed in films deposited at 175 °C and above, with N{sub 2} pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradualmore » transition from majority sp{sup 3}-hybridized films to sp{sup 2} films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CN{sub x} films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.« less

Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Gao, Xiao-Yong; Chen, Chao; Zhang, Sa

2014-03-01

A series of <103>-oriented aluminum-doped zinc oxide (AZO) films were deposited on glass substrates via direct-current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios (GFRs). The optical properties of the films were characterized using the fitted optical constants in the general oscillator model (which contains two Psemi-Tri oscillators) through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single-oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The photoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belkerk, B. E.; Soussou, A.; Carette, M.

This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1}more » K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.« less

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

NASA Astrophysics Data System (ADS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

Cyclic performance tests of Sn/MWCNT composite lithium ion battery anodes at different temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tocoglu, U., E-mail: utocoglu@sakarya.edu.tr; Cevher, O.; Akbulut, H.

In this study tin-multi walled carbon nanotube (Sn-MWCNT) lithium ion battery anodes were produced and their electrochemical galvanostatic charge/discharge tests were conducted at various (25 °C, 35 °C, 50 °C) temperatures to determine the cyclic behaviors of anode at different temperatures. Anodes were produced via vacuum filtration and DC magnetron sputtering technique. Tin was sputtered onto buckypapers to form composite structure of anodes. SEM analysis was conducted to determine morphology of buckypapers and Sn-MWCNT composite anodes. Structural and phase analyses were conducted via X-ray diffraction and Raman Spectroscopy technique. CR2016 coin cells were assembled for electrochemical tests. Cyclic voltammetry testmore » were carried out to determine the reversibility of reactions between anodes and reference electrode between 0.01-2.0 V potential window. Galvanostatic charge/discharge tests were performed to determine cycle performance of anodes at different temperatures.« less

Cross sectional TEM analysis of duplex HIPIMS and DC magnetron sputtered Mo and W doped carbon coatings

NASA Astrophysics Data System (ADS)

Sharp, J.; Castillo Muller, I.; Mandal, P.; Abbas, A.; West, G.; Rainforth, W. M.; Ehiasarian, A.; Hovsepian, P.

2015-10-01

A FIB lift-out sample was made from a wear-resistant carbon coating deposited by high power impulse magnetron sputtering (HIPIMS) with Mo and W. TEM analysis found columnar grains extending the whole ∼1800 nm thick film. Within the grains, the carbon was found to be organised into clusters showing some onion-like structure, with amorphous material between them; energy dispersive X-ray spectroscopy (EDS) found these clusters to be Mo- and W-rich in a later, thinner sample of the same material. Electron energy-loss spectroscopy (EELS) showed no difference in C-K edge, implying the bonding type to be the same in cluster and matrix. These clusters were arranged into stripes parallel to the film plane, of spacing 7-8 nm; there was a modulation in spacing between clusters within these stripes that produced a second, coarser set of striations of spacing ∼37 nm.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

A Penning discharge as a dc source for multiply ionized atoms.

NASA Astrophysics Data System (ADS)

Rainer, Kling; Manfred, Kock

1997-10-01

We report upon a specially designed Penning discharge which has been further developed from a source published by Finley et al.(Finley, D. S., Bowyer, S., Paresce, F., Malina, R. F.: Appl. Opt. 18) (1979) 649 towards a radiation standard for the XUV.(Heise, C., Hollandt, J., Kling, R., Kock, M., Kuehne, M.: Appl. Opt. 33) (1994) 5111 The discharge stands out for low buffer gas pressure, high electric power input and a strong superimposed magnetic field. That leads to intense sputtering of the cathodes which can be made of nearly any material. The efficient excitation and ionization of the sputtered atoms permit spectroscopy on multiply ionized spezies. W III and Fe III spectra will be given as examples. We also will present kinetic temperatures of the nonthermal plasma showing that the ionic component is decoupled from the cold neutral gas component.

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia

2015-03-15

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width atmore » half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.« less

Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dildar, I. M.; Neklyudova, M.; Xu, Q.

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter windowmore » exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.« less

Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: circuitry and mechanical design.

PubMed

Kia, Kaveh Kazemi; Bonabi, Fahimeh

2012-12-01

A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 μs. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

Statistical characteristic in time-domain of direct current corona-generated audible noise from conductor in corona cage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xuebao, E-mail: lxb08357x@ncepu.edu.cn; Cui, Xiang, E-mail: x.cui@ncepu.edu.cn; Ma, Wenzuo

The corona-generated audible noise (AN) has become one of decisive factors in the design of high voltage direct current (HVDC) transmission lines. The AN from transmission lines can be attributed to sound pressure pulses which are generated by the multiple corona sources formed on the conductor, i.e., transmission lines. In this paper, a detailed time-domain characteristics of the sound pressure pulses, which are generated by the DC corona discharges formed over the surfaces of a stranded conductors, are investigated systematically in a laboratory settings using a corona cage structure. The amplitude of sound pressure pulse and its time intervals aremore » extracted by observing a direct correlation between corona current pulses and corona-generated sound pressure pulses. Based on the statistical characteristics, a stochastic model is presented for simulating the sound pressure pulses due to DC corona discharges occurring on conductors. The proposed stochastic model is validated by comparing the calculated and measured A-weighted sound pressure level (SPL). The proposed model is then used to analyze the influence of the pulse amplitudes and pulse rate on the SPL. Furthermore, a mathematical relationship is found between the SPL and conductor diameter, electric field, and radial distance.« less

Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: Circuitry and mechanical design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kia, Kaveh Kazemi; Bonabi, Fahimeh

A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 {mu}s. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through themore » graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.« less

Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: Circuitry and mechanical design

NASA Astrophysics Data System (ADS)

Kia, Kaveh Kazemi; Bonabi, Fahimeh

2012-12-01

A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 μs. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

Performance of 22.4-kW nonlaminated-frame dc series motor with chopper controller. [a dc to dc voltage converter

NASA Technical Reports Server (NTRS)

Schwab, J. R.

1979-01-01

Performance data obtained through experimental testing of a 22.4 kW traction motor using two types of excitation are presented. Ripple free dc from a motor-generator set for baseline data and pulse width modulated dc as supplied by a battery pack and chopper controller were used for excitation. For the same average values of input voltage and current, the motor power output was independent of the type of excitation. However, at the same speeds, the motor efficiency at low power output (corresponding to low duty cycle of the controller) was 5 to 10 percentage points lower on chopped dc than on ripple free dc. The chopped dc locked-rotor torque was approximately 1 to 3 percent greater than the ripple free dc torque for the same average current.

Photoreduction of CO{sub 2} by TiO{sub 2} nanocomposites synthesized through reactive direct current magnetron sputter deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, L.; Graham, M. E.; Li, G.

The photoreduction of CO{sub 2} into methane provides a carbon-neutral energy alternative to fossil fuels, but its feasibility requires improvements in the photo-efficiency of materials tailored to this reaction. We hypothesize that mixed phase TiO{sub 2} nano-materials with high interfacial densities are extremely active photocatalysts well suited to solar fuel production by reducing CO{sub 2} to methane and shifting to visible light response. Mixed phase TiO{sub 2} films were synthesized by direct current (DC) magnetron sputtering and characterized by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM) and transmission electron microscope (TEM). Bundles of anatase-rutile nano-columns havingmore » high densities of two kinds of interfaces (those among the bundles and those between the columns) are fabricated. Films sputtered at a low deposition angle showed the highest methane yield, compared to TiO{sub 2} fabricated under other sputtering conditions and commercial standard Degussa P25 under UV irradiation. The yield of methane could be significantly increased ({approx} 12% CO{sub 2} conversion) by increasing the CO{sub 2} to water ratio and temperature (< 100 C) as a combined effect. These films also displayed a light response strongly shifted into the visible range. This is explained by the creation of non-stoichiometric titania films having unique features that we can potentially tailor to the solar energy applications.« less

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel connected dc-dc buck converters without communication. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work represents the first fully decentralized strategy formore » switch interleaving of paralleled dc-dc buck converters.« less

Computerized Torque Control for Large dc Motors

NASA Technical Reports Server (NTRS)

Willett, Richard M.; Carroll, Michael J.; Geiger, Ronald V.

1987-01-01

Speed and torque ranges in generator mode extended. System of shunt resistors, electronic switches, and pulse-width modulation controls torque exerted by large, three-phase, electronically commutated dc motor. Particularly useful for motor operating in generator mode because it extends operating range to low torque and high speed.

Pulsed discharge ionization source for miniature ion mobility spectrometers

DOEpatents

Xu, Jun; Ramsey, J. Michael; Whitten, William B.

2004-11-23

A method and apparatus is disclosed for flowing a sample gas and a reactant gas (38, 43) past a corona discharge electrode (26) situated at a first location in an ion drift chamber (24), applying a pulsed voltage waveform comprising a varying pulse component and a dc bias component to the corona discharge electrode (26) to cause a corona which in turn produces ions from the sample gas and the reactant gas, applying a dc bias to the ion drift chamber (24) to cause the ions to drift to a second location (25) in the ion drift chamber (24), detecting the ions at the second location (25) in the drift chamber (24), and timing the period for the ions to drift from the corona discharge electrode to the selected location in the drift chamber.

Experimental study of atmospheric-pressure micro-plasmas for the ambient sampling of conductive materials

NASA Astrophysics Data System (ADS)

Duan, Zhengchao; He, Feng; Si, Xinlu; Bradley, James W.; Ouyang, Jiting

2018-02-01

Conductive solid material sampling by micro-plasma under ambient atmosphere was studied experimentally. A high-voltage pulse generator was utilized to drive discharge between a tungsten needle and metal samples. The effects of pulse width on discharge, micro-plasma and sampling were investigated. The electrical results show that two discharge current pulses can be formed in one voltage pulse. The duration of the first current pulse is of the order of 100 ns. The duration of the second current pulse depends on the width of the voltage pulse. The electrical results also show that arc micro-plasma was generated during both current pulses. The results of the emission spectra of different sampled materials indicate that the relative emission intensity of elemental metal ions will increase with pulse width. The excitation temperature and electron density of the arc micro-plasmas increase with the voltage pulse width, which contributes to the increase of relative emission intensity of metal ions. The optical images and energy dispersive spectroscopy results of the sampling spots on metal surfaces indicate that discharge with a short voltage pulse can generate a small sputtering crater.

Microwave-triggered laser switch

DOEpatents

Piltch, M.S.

1982-05-19

A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

Microwave-triggered laser switch

DOEpatents

Piltch, Martin S.

1984-01-01

A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

Controller for a High-Power, Brushless dc Motor

NASA Technical Reports Server (NTRS)

Fleming, David J.; Makdad, Terence A.

1987-01-01

Driving and braking torques controllable. Control circuit operates 7-kW, 45-lb-ft (61-N-m), three-phase, brushless dc motor in both motor and generator modes. In motor modes, energy from power source is pulse-width modulated to motor through modified "H-bridge" circuit, in generator mode, energy from motor is pulse-width modulated into bank of load resistors to provide variable braking torques. Circuit provides high-resolution torque control in both directions over wide range of speeds and torques. Tested successfully at bus voltages up to 200 Vdc and currents up to 45 A.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

Oscillatory dependence of current driven domain wall motion on current pulse length

NASA Astrophysics Data System (ADS)

Thomas, Luc

2007-03-01

The motion of domain walls (DW) in magnetic nanowires driven by spin torque from spin-polarized current is of considerable interest. Most previous work has considered the effect of dc or ˜microsecond long current pulses. Here, we show that the dynamics of DWs driven by nanosecond-long current pulses is unexpectedly complex. In particular, we show that the current driven motion of a DW, confined to a pinning site in a permalloy nanowire, exhibits an oscillatory dependence on the current pulse length with a period of just a few nanoseconds [1]. This behavior can be understood within a surprisingly straightforward one dimensional analytical model of the DW's motion. When a current pulse is applied, the DW's position oscillates within the pinning potential out of phase with the DW's out-of-plane magnetization, where the latter acts like the DW's momentum. Thus, the current driven motion of the DW is akin to a harmonic oscillator, whose frequency is determined by the ``mass'' of the DW and where the restoring force is related to the slope of the pinning potential. Remarkably, when the current pulse is turned off during phases of the DW motion when it has enough momentum, the amplitude of the oscillations can be amplified such that the DW exits the pinning potential well after the pulse is turned off. This oscillatory depinning occurs for currents smaller than the dc threshold current, and, moreover, the DW moves against the electron flow, opposite to the propagation direction above the dc threshold. These effects can be further amplified by using trains of current pulses whose lengths and separations are matched to the DW's oscillation period. In this way, we have demonstrated a five fold reduction in the threshold current required to move a DW out of a pinning site, making this effect potentially important for technological applications. [1] L. Thomas, M. Hayashi, X. Jiang, R. Moriya, C. Rettner and S.S.P. Parkin, Nature 443, 197 (2006).

DC drive system for cine/pulse cameras

NASA Technical Reports Server (NTRS)

Gerlach, R. H.; Sharpsteen, J. T.; Solheim, C. D.; Stoap, L. J.

1977-01-01

Camera-drive functions are separated mechanically into two groups which are driven by two separate dc brushless motors. First motor, a 90 deg stepper, drives rotating shutter; second electronically commutated motor drives claw and film transport. Shutter is made of one piece but has two openings for slow and fast exposures.

Partial ablation of Ti/Al nano-layer thin film by single femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Gaković, B.; Tsibidis, G. D.; Skoulas, E.; Petrović, S. M.; Vasić, B.; Stratakis, E.

2017-12-01

The interaction of ultra-short laser pulses with Titanium/Aluminium (Ti/Al) nano-layered thin film was investigated. The sample composed of alternating Ti and Al layers of a few nanometres thick was deposited by ion-sputtering. A single pulse irradiation experiment was conducted in an ambient air environment using focused and linearly polarized femtosecond laser pulses for the investigation of the ablation effects. The laser induced morphological changes and the composition were characterized using several microscopy techniques and energy dispersive X-ray spectroscopy. The following results were obtained: (i) at low values of pulse energy/fluence, ablation of the upper Ti layer only was observed; (ii) at higher laser fluence, a two-step ablation of Ti and Al layers takes place, followed by partial removal of the nano-layered film. The experimental observations were supported by a theoretical model accounting for the thermal response of the multiple layered structure upon irradiation with ultra-short laser pulses.

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

NASA Astrophysics Data System (ADS)

Postiglione, William Michael

BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better. Specular XRD measurements confirmed highly crystalline films with narrow rocking curve FWHMs on the order of 0.05°. The optimum thickness found to maximize mobility was around 100 nm for films deposited at 8 A/min. These films exhibited room temperature mobilities in excess of 50 cm 2V-1s-1 at carrier concentrations 3 x 1020 cm-3 across 4 different substrate materials (LaAlO3, SrTiO3, GdScO3, and PrScO 3). Contrary to expectations, our findings showed no dependence of mobility on substrate mismatch, indicating that threading dislocations are either not the dominant scattering source, or that threading dislocation density in the films was constant regardless of the substrate. The highest mobility film achieved in this study, 70 cm2V -1s-1, was measured for a film grown at a considerably slower rate ( 2 A/min) and lower thickness ( 380 A). Said film was deposited on a PrScO3 (110) substrate, the most closely lattice matched substrate commercially available for BSO (-2.2% pseudo-cubic). This film showed a high out-of-plane lattice parameter from X-ray diffraction (aop = 4.158 A), suggesting a significantly strained film. This result highlights the possibility of sputtering coherent, fully strained, BSO films, far exceeding the theoretical critical thickness for misfit dislocation formation, on closely lattice matched substrates. Overall, this work validates the concept of high pressure oxygen sputtering to produce high mobility La-doped BSO films. The mobility values reported in this thesis are comparable to those found for films deposited via pulsed laser deposition in previous studies, and represent record values for sputter deposited BSO thin films.

A Novel Variable Wide Bandgap Material for High Power, High Frequency Devices

DTIC Science & Technology

2011-01-13

temperature above 1300 °C caused the back side of the Si substrates to soften and form molybdenum silicides with the holder or to simply sublime...copper while Figures 7b, 7d, and 7f show the measured impurity levels of aluminum and sodium in the 4H-SiC substrate, RF sputtered film, and DC... sodium which are completely absent in the 4H- SiC substrate. These impurities are also attributed to the aluminum silicate shell that is evidently

MBE System for Antimonide Based Semiconductor Lasers

DTIC Science & Technology

1999-01-31

selectivity are reported as a function of plasma chemistry and DC self-bias. Experiment The samples used in this study are undoped bulk GaSb, InSb...Phys. Lett. 64(13), 1673-1675 (1994). 8. J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson, and F. Ren, Plasma Chemistry and...AlGaAsSb are reported as functions of plasma chemistry , ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering desorption of

Metal-Coated Optical Fibers for High Temperature Applications

NASA Technical Reports Server (NTRS)

Zeakes, Jason; Murphy, Kent; Claus, Richard; Greene, Jonathan; Tran, Tuan

1996-01-01

A DC magnetron sputtering system has been used to actively coat optical fibers with hermetic metal coatings during the fiber draw process. Thin films of Inconel 625 have been deposited on optical fibers and annealed in air at 2000 F. Scanning electron microscopy and Auger electron microscopy have been used to investigate the morphology and composition of the films prior to and following thermal cycling. Issues to be addressed include film adhesion, other coating materials, and a discussion of additional applications for this novel technology.

Development of Novel Magnetic Metal Oxide Films and Carbon Nanotube Materials for Magnetic Device Applications

DTIC Science & Technology

2015-01-23

From these studies we learned that nano wires of Fe grown in the lumens of multi-walled carbon nanotubes ( MWCNTs ) required four times higher 35...studies we learned that nano wires of Fe grown in the lumens of multi-walled carbon nanotubes ( MWCNTs ) required four times higher magnetic field...properties of nano-metric Fe thin films on 325 MgO(100) and nano wires of Fe prepared in the lumens of MWCNTs using magnetron DC-sputtering were studied

Characteristics of pulse corona discharge over water surface

NASA Astrophysics Data System (ADS)

Fujii, Tomio; Arao, Yasushi; Rea, Massimo

2008-12-01

Production of ozone and OH radical is required to advance the plasma chemical reactions in the NOx removal processes for combustion gas treatment. The corona discharge to the water surface is expected to induce the good conditions for the proceeding of the NO oxidation and the NO2 dissolution removal into water. In order to get the fundamental data of the corona discharge over the water surface, the positive and negative V-I characteristics and the ozone production were measured with the multi needle and the saw-edge type of the discharge electrodes. The pulse corona characteristics were also measured with some different waveforms of the applied pulse voltage. The experiments were carried out under the atmospheric pressure and room temperature. Both the DC and the pulse corona to the water surface showed a stable and almost the same V-I characteristics as to plate electrodes though the surface of water was waved by corona wind. The positive streamer corona showed more ozone production than the negative one both in the DC and in the pulse corona.

Antigen-specific immature dendritic cell vaccine ameliorates anti-dsDNA antibody-induced renal damage in a mouse model.

PubMed

Xia, Yumin; Jiang, Shan; Weng, Shenhong; Lv, Xiaochun; Cheng, Hong; Fang, Chunhong

2011-12-01

Dendritic cells (DCs) can inhibit immune response by clonal anergy when immature. Recent studies have shown that immature DCs (iDCs) may serve as a live cell vaccine after specific antigen pulse based on its potential of blocking antibody production. In this study, we aimed to investigate the effects of nuclear antigen-pulsed iDCs in the treatment of lupus-like renal damages induced by anti-dsDNA antibodies. iDCs were generated from haemopoietic stem cells in bone marrow and then pulsed in vitro with nuclear antigen. The iDC vaccine and corresponding controls were injected into mice with lupus-like renal damages. The evaluation of disease was monitored by biochemical parameters and histological scores. Anti-dsDNA antibody isotypes and T-lymphocyte-produced cytokines were analysed for elucidating therapeutic mechanisms. RESULTS; The mice treated with antigen-pulsed iDCs had a sustained remission of renal damage compared with those injected with non-pulsed iDCs or other controls, including decreased anti-dsDNA antibody level, less proteinuria, lower blood urea nitrogen and serum creatinine values, and improved histological evaluation. Analysis on isotypes of anti-dsDNA antibody showed that iDC vaccine preferentially inhibited the production of IgG3, IgG2b and IgG2a. Furthermore, administration of antigen-treated iDCs to mice resulted in significantly reduced IL-2, IL-4 and IL-12 and IFN-γ produced by T-memory cells. Conversely, the vaccination of antigen-pulsed mature DCs led to increased anti-dsDNA antibody production and an aggravation of lupus-like disease in the model. CONCLUSIONS; These results suggested the high potency of iDC vaccine in preventing lupus-like renal injuries induced by pathogenic autoantibodies.

DIRECT COUPLED PROGRESSIVE STAGE PULSE COUNTER APPARATUS

DOEpatents

Kaufman, W.M.

1962-08-14

A progressive electrical pulse counter circuit was designed for the counting of a chain of input pulses of random width and/or frequency. The circuit employs an odd and even pulse input line alternately connected to a series of directly connected bistable counting stages. Each bistable stage has two d-c operative states which stage, when in its rnrtial state, prevents the next succeeding stage from changing its condition when the latter stage is pulsed. Since only altennate stages are pulsed for each incoming pulse, only one stage will change its state for each input pulse thereby providing prog essive stage by stage counting. (AEC)

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel-connected dc-dc buck converters. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform and no communication between different controllers is needed. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work presents themore » first fully decentralized strategy for switch interleaving in paralleled dc-dc buck converters.« less

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T. T., E-mail: li48@llnl.gov; Bayu Aji, L. B.; Heo, T. W.

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar{sup +} ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE PAGES

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.; ...

2016-06-03

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Application of Filters for High-Altitude Electromagnetic Pulse Protection

DTIC Science & Technology

1981-04-01

The application of filters for the protection of electrical equipment from electrical transient signals induced by high-altitude electromagnetic ... pulse (HEMP) is discussed, and the application of filters to ac and dc power supplies and analog and digital signal inputs is described. The application

Towards a petawatt-class few-cycle infrared laser system via dual-chirped optical parametric amplification.

PubMed

Fu, Yuxi; Midorikawa, Katsumi; Takahashi, Eiji J

2018-05-16

Expansion of the wavelength range for an ultrafast laser is an important ingredient for extending its range of applications. Conventionally, optical parametric amplification (OPA) has been employed to expand the laser wavelength to the infrared (IR) region. However, the achievable pulse energy and peak power have been limited to the mJ and the GW level, respectively. A major difficulty in the further energy scaling of OPA results from a lack of suitable large nonlinear crystals. Here, we circumvent this difficulty by employing a dual-chirped optical parametric amplification (DC-OPA) scheme. We successfully generate a multi-TW IR femtosecond laser pulse with an energy of 100 mJ order, which is higher than that reported in previous works. We also obtain excellent energy scaling ability, ultrashort pulses, flexiable wavelength tunability, and high-energy stability, which prove that DC-OPA is a superior method for the energy scaling of IR pulses to the 10 J/PW level.

Activated natural killer cell-mediated immunity is required for the inhibition of tumor metastasis by dendritic cell vaccination.

PubMed

Kim, Aeyung; Noh, Young-Woock; Kim, Kwang Dong; Jang, Yong-Suk; Choe, Yong-Kyung; Lim, Jong-Seok

2004-10-31

Immunization with dendritic cells (DCs) pulsed with tumor antigen can activate tumor-specific cytotoxic T lymphocytes (CTL), which is responsible for tumor protection and regression. In this study, we examined whether DCs pulsed with necrotic tumor lysates can efficiently prevent malignant melanoma tumor cell metastasis to the lung. DCs derived from mouse bone marrow were found to produce remarkably elevated levels of IL-12 after being pulsed with the tumor lysates. Moreover, immunization with these DCs induced CTL activation and protected mice from metastasis development by intravenously inoculated tumor cells. In addition, these DCs activated NK cells in vitro in a contact-dependent manner, and induced NK activities in vivo. Furthermore, NK cell depletion before DC vaccination significantly reduced the tumor-specific CTL activity, IFN-gamma production, and IFN-gamma- inducible gene expression, and eventually interfered with the antitumor effect of tumor-pulsed DCs. Finally, similar findings with respect to NK cell dependency were obtained in the C57BL/ 6J-bg/bg mice, which have severe deficiency in cytolytic activity of NK cells. These data suggest that the antitumor effect elicited by DC vaccination, at least in a B16 melanoma model, requires the participation of both cytolytic NK and CD8(+) T cells. The findings of this study would provide important data for the effective design of DC vaccines for cancer immunotherapy.

GHz laser-free time-resolved transmission electron microscopy: A stroboscopic high-duty-cycle method.

PubMed

Qiu, Jiaqi; Ha, Gwanghui; Jing, Chunguang; Baryshev, Sergey V; Reed, Bryan W; Lau, June W; Zhu, Yimei

2016-02-01

A device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second electron pulse sequences (pulse trains) at >1GHz repetition rates, as well as controllably manipulates the resulting pulses. Ultimately, it leads to negligible electron pulse phase-space degradation compared to the incoming dc beam parameters. The temporal pulse length and repetition rate for the EMMP can be continuously tunable over wide ranges. Applying the EMMP to a transmission electron microscope (TEM) with any dc electron source (e.g. thermionic, Schottky, or field-emission source), a GHz stroboscopic high-duty-cycle TEM can be realized. Unlike in many recent developments in time-resolved TEM that rely on a sample pumping laser paired with a laser launching electrons from a photocathode to probe the sample, there is no laser in the presented experimental set-up. This is expected to be a significant relief for electron microscopists who are not familiar with laser systems. The EMMP and the sample are externally driven by a radiofrequency (RF) source synchronized through a delay line. With no laser pumping the sample, the problem of the pump laser induced residual heating/damaging the sample is eliminated. As many RF-driven processes can be cycled indefinitely, sampling rates of 1-50GHz become accessible. Such a GHz stroboscopic TEM would open up a new paradigm for in situ and in operando experiments to study samples externally driven electromagnetically. Complementary to the lower (MHz) repetition rates experiments enabled by laser photocathode TEM, new experiments in the multi-GHz regime will be enabled by the proposed RF design. Because TEM is also a platform for various analytical methods, there are infinite application opportunities in energy and electronics to resolve charge (electronic and ionic) transport, and magnetic, plasmonic and excitonic dynamics in advanced functional materials. In addition, because the beam duty-cycle can be as high as ~10(-1) (or 10%), detection can be accomplished by commercially available detectors. In this article, we report an optimal design of the EMMP. The optimal design was found using an analytical generalized matrix approach in the thin lens approximation along with detailed beam dynamics taking actual realistic dc beam parameters in a TEM operating at 200keV. Copyright © 2015 Elsevier B.V. All rights reserved.

Two-step phase-shifting SPIDER

NASA Astrophysics Data System (ADS)

Zheng, Shuiqin; Cai, Yi; Pan, Xinjian; Zeng, Xuanke; Li, Jingzhen; Li, Ying; Zhu, Tianlong; Lin, Qinggang; Xu, Shixiang

2016-09-01

Comprehensive characterization of ultrafast optical field is critical for ultrashort pulse generation and its application. This paper combines two-step phase-shifting (TSPS) into the spectral phase interferometry for direct electric-field reconstruction (SPIDER) to improve the reconstruction of ultrafast optical-fields. This novel SPIDER can remove experimentally the dc portion occurring in traditional SPIDER method by recording two spectral interferograms with π phase-shifting. As a result, the reconstructed results are much less disturbed by the time delay between the test pulse replicas and the temporal widths of the filter window, thus more reliable. What is more, this SPIDER can work efficiently even the time delay is so small or the measured bandwidth is so narrow that strong overlap happens between the dc and ac portions, which allows it to be able to characterize the test pulses with complicated temporal/spectral structures or narrow bandwidths.

Study of Wastewater Treatment by OH Radicals Using DC and Pulsed Corona Discharge over Water

NASA Astrophysics Data System (ADS)

Tochikubo, Fumiyoshi; Furuta, Yasutomo; Uchida, Satoshi; Watanabe, Tsuneo

2006-04-01

Water treatment by OH radicals is studied using dc and pulsed corona discharge over water at atmospheric pressure and reduced pressure. In particular, we pay attention to the influence of discharge configuration on the efficiency of wastewater treatment. Experiment is carried out in N2 to clarify the contribution of OH radicals. Needle-cylinder electrodes are designed expecting the efficient generation of OH radicals close to the water surface. N,N-dimethyl- p-nitrosoaniline (RNO) solution is used as a persistent test pollutant. The results strongly suggest that OH radical production close to the water surface is a key factor for efficient wastewater treatment. The use of pulsed discharge at reduced pressure is effective in improving RNO reduction efficiency because of the rapid diffusion of OH radicals to the water surface.

A simple approach to detect and correct signal faults of Hall position sensors for brushless DC motors at steady speed

NASA Astrophysics Data System (ADS)

Shi, Yongli; Wu, Zhong; Zhi, Kangyi; Xiong, Jun

2018-03-01

In order to realize reliable commutation of brushless DC motors (BLDCMs), a simple approach is proposed to detect and correct signal faults of Hall position sensors in this paper. First, the time instant of the next jumping edge for Hall signals is predicted by using prior information of pulse intervals in the last electrical period. Considering the possible errors between the predicted instant and the real one, a confidence interval is set by using the predicted value and a suitable tolerance for the next pulse edge. According to the relationship between the real pulse edge and the confidence interval, Hall signals can be judged and the signal faults can be corrected. Experimental results of a BLDCM at steady speed demonstrate the effectiveness of the approach.

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu; Johnson, Forrest

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. %more » Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.« less

Microprocessor control of multiple peak power tracking DC/DC converters for use with solar cell arrays

NASA Technical Reports Server (NTRS)

Frederick, Martin E. (Inventor); Jermakian, Joel (Inventor)

1991-01-01

A method and an apparatus is provided for efficiently controlling the power output of a solar cell array string or a plurality of solar cell array strings to achieve a maximum amount of output power from the strings under varying conditions of use. Maximum power output from a solar array string is achieved through control of a pulse width modulated DC/DC buck converter which transfers power from a solar array to a load or battery bus. The input voltage from the solar array to the converter is controlled by a pulse width modulation duty cycle, which in turn is controlled by a differential signal controller. By periodically adjusting the control voltage up or down by a small amount and comparing the power on the load or bus with that generated at different voltage values a maximum power output voltage may be obtained. The system is totally modular and additional solar array strings may be added to the system simply by adding converter boards to the system and changing some constants in the controller's control routines.

Pulsed power molten salt battery

NASA Technical Reports Server (NTRS)

Argade, Shyam D.

1992-01-01

It was concluded that carbon cathodes with chlorine work well. Lithium alloy chlorine at 450 C, 1 atm given high power capability, high energy density, DC + pulsing yields 600 pulses, no initial peak, and can go to red heat without burn-up. Electrochemical performance at the cell and cell stack level out under demanding test regime. Engineering and full prototype development for advancing this technology is warranted.

Development of a Lumped Element Circuit Model for Approximation of Dielectric Barrier Discharges

DTIC Science & Technology

2011-08-01

dielectric barrier discharge (DBD) plasmas. Based on experimental observations, it is assumed that nanosecond pulsed DBDs, which have been proposed...species for pulsed direct current (DC) dielectric barrier discharge (DBD) plasmas. Based on experimental observations, it is assumed that nanosecond...momentum-based approaches. Given the fundamental differences between the novel pulsed discharge approach and the more conventional momentum-based

Electroporation of DC-3F cells is a dual process.

PubMed

Wegner, Lars H; Frey, Wolfgang; Silve, Aude

2015-04-07

Treatment of biological material by pulsed electric fields is a versatile technique in biotechnology and biomedicine used, for example, in delivering DNA into cells (transfection), ablation of tumors, and food processing. Field exposure is associated with a membrane permeability increase usually ascribed to electroporation, i.e., formation of aqueous membrane pores. Knowledge of the underlying processes at the membrane level is predominantly built on theoretical considerations and molecular dynamics (MD) simulations. However, experimental data needed to monitor these processes with sufficient temporal resolution are scarce. The whole-cell patch-clamp technique was employed to investigate the effect of millisecond pulsed electric fields on DC-3F cells. Cellular membrane permeabilization was monitored by a conductance increase. For the first time, to our knowledge, it could be established experimentally that electroporation consists of two clearly separate processes: a rapid membrane poration (transient electroporation) that occurs while the membrane is depolarized or hyperpolarized to voltages beyond so-called threshold potentials (here, +201 mV and -231 mV, respectively) and is reversible within ∼100 ms after the pulse, and a long-term, or persistent, permeabilization covering the whole voltage range. The latter prevailed after the pulse for at least 40 min, the postpulse time span tested experimentally. With mildly depolarizing or hyperpolarizing pulses just above threshold potentials, the two processes could be separated, since persistent (but not transient) permeabilization required repetitive pulse exposure. Conductance increased stepwise and gradually with depolarizing and hyperpolarizing pulses, respectively. Persistent permeabilization could also be elicited by single depolarizing/hyperpolarizing pulses of very high field strength. Experimental measurements of propidium iodide uptake provided evidence of a real membrane phenomenon, rather than a mere patch-clamp artifact. In short, the response of DC-3F cells to strong pulsed electric fields was separated into a transient electroporation and a persistent permeabilization. The latter dominates postpulse membrane properties but to date has not been addressed by electroporation theory or MD simulations. Copyright © 2015 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sulaeman, M. Y.; Widita, R.

2014-09-30

Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulsemore » than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.« less

Development of Ni-based multilayers for future focusing soft gamma ray telescopes

NASA Astrophysics Data System (ADS)

Girou, David A.; Massahi, Sonny; Sleire, Erlend K.; Jakobsen, Anders C.; Christensen, Finn E.

2015-09-01

Ni-based multilayers are a possible solution to extend the upper energy range of hard X-ray focusing telescopes currently limited at ≈79:4 keV by the Pt-K absorption edge. In this study 10 bilayers multilayers with a constant bilayer thickness were coated with the DC magnetron sputtering facility at DTU Space, characterized at 8 keV using X-ray reectometry and fitted using the IMD software. Ni/C multilayers were found to have a mean interface roughness ≈ 1:5 times lower than Ni/B4C multilayers. Reactive sputtering with ≈ 76% of Ar and ≈ 24% of N2 reduced the mean interface roughness by a factor of ≈ 1:7. It also increased the coating rate of C by a factor of ≈ 3:1 and lead to a coating process going ≈ 1:6 times faster. Honeycomb collimation proved to limit the increase in mean interface roughness when the bilayer thickness increases at the price of a coating process going ≈ 1:9 times longer than with separator plates. Finally a Ni/C 150 bilayers depth-graded mutilayer was coated with reactive sputtering and honeycomb collimation and then characterized from 10 keV to 150 keV. It showed 10% reectance up to 85 keV.

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

NASA Astrophysics Data System (ADS)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Sputtered superconducting films of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x made by low-temperature, in-situ growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kampwirth, R.T.; Gray, K.E.; Andersen, P.H.

1989-01-01

Composite target rf magnetron sputtering has previously been successfully employed to make superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} in-situ at substrate temperatures T{sub s} < 700{degree}C. We report the successful growth of superconducting films of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub x} on single crystal MgO substrates by a low-temperature process using dc magnetron sputtering from a Bi-enriched composite target. Using a substrate temperature T{sub s} {approx} 645{degree}C, metallic films with a superconducting onset of 90--100K and an extrapolated T{sub c0} = 56K have been obtained. X-ray diffraction shows the films to be c-axis oriented. Electron microscopy reveals that the filmsmore » are not significantly smoother than films which were post-annealed at 865{degree}C, and that some segregation into nonsuperconducting phases had occurred. The exact mechanism by which crystallization and superconductivity occurs at such low temperatures is not yet known, but it can be speculated that the surface atoms are less constrained and thus have a smaller energy barrier to overcome in forming a crystal structure. 9 refs., 4 figs., 1 tab.« less

Methods and Apparatus for Pulsed-DC Dielectric Barrier Discharge Plasma Actuator and Circuit

NASA Technical Reports Server (NTRS)

Corke, Thomas C. (Inventor); Gold, Calman (Inventor); Kaszeta, Richard (Inventor)

2017-01-01

A plasma generating device intended to induce a flow in a fluid via plasma generation includes a dielectric separating two electrodes and a power supply. The first electrode is exposed to a fluid flow while the second electrode is positioned under the dielectric. The power supply is electrically coupled to a switch and the first and second electrodes. When the power supply is energized by repeated action of the switch, it causes a pulsed DC current between the electrodes which causes the fluid to ionize generating a plasma. The generation of the plasma induces a force with a velocity component in the fluid.

Characteristics of a Direct Current-driven plasma jet operated in open air

NASA Astrophysics Data System (ADS)

Li, Xuechen; Di, Cong; Jia, Pengying; Bao, Wenting

2013-09-01

A DC-driven plasma jet has been developed to generate a diffuse plasma plume by blowing argon into the ambient air. The plasma plume, showing a cup shape with a diameter of several centimeters at a higher voltage, is a pulsed discharge despite a DC voltage is applied. The pulse frequency is investigated as a function of the voltage under different gap widths and gas flow rates. Results show that plasma bullets propagate from the hollow needle to the plate electrode by spatially resolved measurement. A supposition about non-electroneutral trail of the streamer is proposed to interpret these experimental phenomena.

Pulsed, atmospheric pressure plasma source for emission spectrometry

DOEpatents

Duan, Yixiang; Jin, Zhe; Su, Yongxuan

2004-05-11

A low-power, plasma source-based, portable molecular light emission generator/detector employing an atmospheric pressure pulsed-plasma for molecular fragmentation and excitation is described. The average power required for the operation of the plasma is between 0.02 W and 5 W. The features of the optical emission spectra obtained with the pulsed plasma source are significantly different from those obtained with direct current (dc) discharge higher power; for example, strong CH emission at 431.2 nm which is only weakly observed with dc plasma sources was observed, and the intense CN emission observed at 383-388 nm using dc plasma sources was weak in most cases. Strong CN emission was only observed using the present apparatus when compounds containing nitrogen, such as aniline were employed as samples. The present apparatus detects dimethylsulfoxide at 200 ppb using helium as the plasma gas by observing the emission band of the CH radical. When coupled with a gas chromatograph for separating components present in a sample to be analyzed, the present invention provides an apparatus for detecting the arrival of a particular component in the sample at the end of the chromatographic column and the identity thereof.

Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

NASA Astrophysics Data System (ADS)

Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

2017-03-01

Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1-xGaxSe2-ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (-1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15 films

NASA Astrophysics Data System (ADS)

Sekhar, M. Chandra; Uthanna, S.; Martins, R.; Jagadeesh Chandra, S. V.; Elangovan, E.

2012-04-01

Thin films of (Ta2O5)0.85(TiO2)0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (Ts) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures >= 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta2O5)0.85(TiO2)0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta2O5)0.85(TiO2)0.15/Si. A low leakage current of 7.7 × 10-5 A/cm2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10-8 A/cm2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta2O5)0.85(TiO2)0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (Eg) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature.

Growth (AlCrNbSiTiV)N thin films on the interrupted turning and properties using DCMS and HIPIMS system

NASA Astrophysics Data System (ADS)

Chang, Kai-Sheng; Chen, Kuan-Ta; Hsu, Chun-Yao; Hong, Po-Da

2018-05-01

This paper determines the optimal settings in the deposition parameters for (AlCrNbSiTiV)N high-entropy alloy (HEAs) nitride films that are deposited on CBN cutting tools and glass substrates. We use direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HIPIMS), with Ar plasma and N2 reactive gases. Experiments with the grey-Taguchi method are conducted to determine the effect of deposition parameters (deposition time, substrate DC bias, DC power and substrate temperature) on interrupted turning 50CrMo4 steel machining and the films' structural properties. Experimental result shows that the multiple performance characteristics for these (AlCrNbSiTiV)N HEAs film coatings can be improved using the grey-Taguchi method. As can be seen, the coated film is homogeneous, very compact and exhibits perfect adherence to the substrate. The distribution of elements is homogeneous through the depth of the (AlCrNbSiTiV)N film, as measured by an auger electron nanoscope. After interrupted turning with an (AlCrNbSiTiV)N film coated tool, we obtain much longer tool life than when using uncoated tools. The correlation of these results with microstructure analysis and tool life indicates that HIPIMS discharge induced a higher (AlCrNbSiTiV)N film density, a smoother surface structure and a higher hardness surface.

Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

NASA Astrophysics Data System (ADS)

Cubillos, G. I.; Bethencourt, M.; Olaya, J. J.

2015-02-01

ZrOxNy/ZrO2 thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO2 was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrOxNy rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr2ON2 crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride-containing media.

Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

NASA Astrophysics Data System (ADS)

Khalaf, Mohammed K.; Mutlak, Rajaa H.; Khudiar, Ausama I.; Hial, Qahtan G.

2017-06-01

Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8-2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

Characterization of a Surface-Flashover Ion Source with 10-250 ns Pulse Widths

NASA Astrophysics Data System (ADS)

Falabella, S.; Guethlein, G.; Kerr, P. L.; Meyer, G. A.; Morse, J. D.; Sampayan, S.; Tang, V.

2009-03-01

As a step towards developing an ultra compact D-D neutron source for various defense and homeland security applications, a compact ion source is needed. Towards that end, we are testing a pulsed, surface flashover source, with deuterated titanium films deposited on alumina substrates as the electrodes. An electrochemically-etched mask was used to define the electrode areas on the substrate during the sputtered deposition of the titanium films. Deuterium loading of the films was performed in an all metal-sealed vacuum chamber containing a heated stage. Deuterium ion current from the source was determined by measuring the neutrons produced when the ions impacted a deuterium-loaded target held at -90 kV. As the duration of the arc current is varied, it was observed that the integrated deuteron current per pulse initially increases rapidly, then reaches a maximum near a pulse length of 100 ns.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical...vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...The instrumentation enables clean, uniform, and rapid deposition of a wide variety of metallic, semiconducting, and ceramic thin films with

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical... vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Hybrid Physical Vapor Deposition Instrument for Advanced

Wright Laboratory Research and Development Facilities Handbook

DTIC Science & Technology

1992-08-01

properties o. superconductors SPECIAL/UNIQUE CAPABILITIES: Two superconducting coils: 3-inch bore, 10 Tesla coil. 20 kilojoule repetitively pulsed coil 7 inch...bore, cryogenically cooled 14 Tesla coil INSTRUMENTATION: Computer Controlled Variable Temperature (2-400K) and Field (0-5 Tesla ) Squid Susceptometer...Variable Temperature (10-80K) and Field (0-10 Tesla ) Transport Current Measurement Apparatus RF Source Sputtering Rig, Optical Microscope, Furnaces

Effect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hans, M., E-mail: hans@mch.rwth-aachen.de; Baben, M. to; Music, D.

2014-09-07

Ti-Al-O-N coatings were synthesized by cathodic arc and high power pulsed magnetron sputtering. The chemical composition of the coatings was determined by means of elastic recoil detection analysis and energy dispersive X-ray spectroscopy. The effect of oxygen incorporation on the stress-free lattice parameters and Young's moduli of Ti-Al-O-N coatings was investigated by X-ray diffraction and nanoindentation, respectively. As nitrogen is substituted by oxygen, implications for the charge balance may be expected. A reduction in equilibrium volume with increasing O concentration is identified by X-ray diffraction and density functional theory calculations of Ti-Al-O-N supercells reveal the concomitant formation of metal vacancies.more » Hence, the oxygen incorporation-induced formation of metal vacancies enables charge balancing. Furthermore, nanoindentation experiments reveal a decrease in elastic modulus with increasing O concentration. Based on ab initio data, two causes can be identified for this: First, the metal vacancy-induced reduction in elasticity; and second, the formation of, compared to the corresponding metal nitride bonds, relatively weak Ti-O and Al-O bonds.« less

A pulsed mode electrolytic drug delivery device

NASA Astrophysics Data System (ADS)

Yi, Ying; Buttner, Ulrich; Carreno, Armando A. A.; Conchouso, David; Foulds, Ian G.

2015-10-01

This paper reports the design of a proof-of-concept drug delivery device that is actuated using the bubbles formed during electrolysis. The device uses a platinum (Pt) coated nickel (Ni) metal foam and a solid drug in reservoir (SDR) approach to improve the device’s performance. This electrochemically-driven pump has many features that are unlike conventional drug delivery devices: it is capable of pumping periodically and being refilled automatically; it features drug release control; and it enables targeted delivery. Pt-coated metal foam is used as a catalytic reforming element, which reduces the period of each delivery cycle. Two methods were used for fabricating the Pt-coated metal: sputtering and electroplating. Of these two methods, the sputtered Pt-coated metal foam has a higher pumping rate; it also has a comparable recombination rate when compared to the electroplated Pt-coated metal foam. The only drawback of this catalytic reformer is that it consumes nickel scaffold. Considering long-term applications, the electroplated Pt metal foam was selected for drug delivery, where a controlled drug release rate of 2.2 μg  ±  0.3 μg per actuation pulse was achieved using 4 mW of power.

Combined effect of pulse electron beam treatment and thin hydroxyapatite film on mechanical features of biodegradable AZ31 magnesium alloy

NASA Astrophysics Data System (ADS)

Surmeneva, M. A.; Tyurin, A. I.; Teresov, A. D.; Koval, N. N.; Pirozhkova, T. S.; Shuvarin, I. A.; Surmenev, R. A.

2015-11-01

The morphology, elemental, phase composition, nanohardness, and Young's modulus of the hydroxyapatite (HA) coating deposited via radio frequency (RF) magnetron sputtering onto the AZ31 surface were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and nanoindentationtechniques. The calcium phosphate (Ca/P) molar ratio of the HA coating deposited via RF-magnetron sputtering onto AZ31 substrates according to EDX was 1.57+0.03. The SEM experiments revealed significant differences in the morphology of the HA film deposited on untreated and treated with the pulsed electron beam (PEB) AZ31 substrate. Nanoindentation studies demonstrated significant differences in the mechanical responses of the HA film deposited on the initial and PEB-modified AZ31 substrates. The nanoindentation hardness and the Young's modulus of the HA film on the magnesium alloy modified using the PEB treatment were higher than that of the HA layer on the untreated substrate. Moreover, the HA film fabricated onto the PEB-treated surface was more resistant to plastic deformation than the same film on the untreated AZ31 surface.

Improved irradiation tolerance of reactive gas pulse sputtered TiN coatings with a hybrid architecture of multilayered and compositionally graded structures

NASA Astrophysics Data System (ADS)

Liang, Wei; Yang, Jijun; Zhang, Feifei; Lu, Chenyang; Wang, Lumin; Liao, Jiali; Yang, Yuanyou; Liu, Ning

2018-04-01

This study investigates the improved irradiation tolerance of reactive gas pulse (RGP) sputtered TiN coatings which has hybrid architecture of multilayered and compositionally graded structures. The multilayered RGP-TiN coating is composed of hexagonal close-packed Ti phase and face-centred cubic TiN phase sublayers, where the former sublayer has a compositionally graded structure and the latter one maintains constant stoichiometric atomic ratio of Ti:N. After 100 keV He ion irradiation, the RGP-TiN coating exhibits improved irradiation resistance compared with its single layered (SL) counterpart. The size and density of He bubbles are smaller in the RGP-TiN coating than in the SL-TiN coating. The irradiation-induced surface blistering of the coatings shows a similar tendency. Meanwhile, the irradiation hardening and adhesion strength of the RGP-TiN coatings were not greatly affected by He irradiation. Moreover, the irradiation damage tolerance of the coatings can be well tuned by changing the undulation period number of N2 gas flow rate. Detailed analysis suggested that this improved irradiation tolerance could be related to the combined contribution of the multilayered and compositionally graded structures.

Understanding the Role of Nitrogen in Plasma-Assisted Surface Modification of Magnetic Recording Media with and without Ultrathin Carbon Overcoats

PubMed Central

Dwivedi, Neeraj; Yeo, Reuben J.; Satyanarayana, Nalam; Kundu, Shreya; Tripathy, S.; Bhatia, C. S.

2015-01-01

A novel scheme of pre-surface modification of media using mixed argon-nitrogen plasma is proposed to improve the protection performance of 1.5 nm carbon overcoats (COC) on media produced by a facile pulsed DC sputtering technique. We observe stable and lower friction, higher wear resistance, higher oxidation resistance, and lower surface polarity for the media sample modified in 70%Ar + 30%N2 plasma and possessing 1.5 nm COC as compared to samples prepared using gaseous compositions of 100%Ar and 50%Ar + 50%N2 with 1.5 nm COC. Raman and X-ray photoelectron spectroscopy results suggest that the surface modification process does not affect the microstructure of the grown COC. Instead, the improved tribological, corrosion-resistant and oxidation-resistant characteristics after 70%Ar + 30%N2 plasma-assisted modification can be attributed to, firstly, the enrichment in surface and interfacial bonding, leading to interfacial strength, and secondly, more effective removal of ambient oxygen from the media surface, leading to stronger adhesion of the COC with media, reduction of media corrosion and oxidation, and surface polarity. Moreover, the tribological, corrosion and surface properties of mixed Ar + N2 plasma treated media with 1.5 nm COCs are found to be comparable or better than ~2.7 nm thick conventional COC in commercial media. PMID:25586898

Mechanical Integrity of Flexible In-Zn-Sn-O Film for Flexible Transparent Electrode

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Oh, Se-In; Choa, Sung-Hoon

2013-05-01

The mechanical integrity of transparent In-Zn-Sn-O (IZTO) films is investigated using outer/inner bending, stretching, and twisting tests. Amorphous IZTO films are grown using a pulsed DC magnetron sputtering system with an IZTO target on a polyimide substrate at room temperature. Changes in the optical and electrical properties of IZTO films depend on the oxygen partial pressure applied during the film deposition process. In the case of 3% oxygen partial pressure, the IZTO films exhibit s resistivity of 8.3×10-4 Ω cm and an optical transmittance of 86%. The outer bending test shows that the critical bending radius decreases from 10 to 7.5 mm when the oxygen partial pressure is increased from 1 to 3%. The inner bending test reveals that the critical bending radius of all IZTO films is 3.5 mm regardless of oxygen partial pressure. The IZTO films also show excellent mechanical reliability in the bending fatigue tests of more than 10,000 cycles. In the uniaxial stretching tests, the electrical resistance of the IZTO film does not change until a strain of 2.4% is reached. The twisting tests demonstrate that the electrical resistance of IZTO films remains unchanged up to 25°. These results suggest that IZTO films have excellent mechanical durability and flexibility in comparison with already reported crystallized indium tin oxide (ITO) films.

Controlling particle properties in {{YBa}}_{2}{{Cu}}_{3}{{\\rm{O}}}_{7-\\delta } nanocomposites by combining PLD with an inert gas condensation system

NASA Astrophysics Data System (ADS)

Sparing, M.; Reich, E.; Hänisch, J.; Gottschall, T.; Hühne, R.; Fähler, S.; Rellinghaus, B.; Schultz, L.; Holzapfel, B.

2017-10-01

The critical current density {J}{{c}} in {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films, which limits their application in external magnetic fields, can be enhanced by the introduction of artificial pinning centers such as non-superconducting nanoparticles inducing additional defects and local strain in the superconducting matrix. To understand the correlation between superconductivity, defect structures and particles, a controlled integration of particles with adjustable properties is essential. A powerful technique for the growth of isolated nanoparticles in the range of 10 nm is dc-magnetron sputtering in an inert gas flow. The inert gas condensation (IGC) of particles allows for an independent control of both the particle diameter distribution and the areal density. We report on the integration of such gas-phase-condensed {{HfO}}2 nanoparticles into pulsed laser deposited (PLD) {{YBa}}2{{Cu}}3{{{O}}}7-δ thin film multilayers with a combined PLD-IGC system. The particles and the structure of the multilayers are analyzed by transmission electron microscopy on cross-sectional FIB lamellae. As a result of the IGC particle implementation, randomly as well as biaxially oriented {{BaHfO}}3 precipitates are formed in the {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films. With as few as three interlayers of nanoparticles, the pinning force density is enhanced in the low-field region.

Self-focused ZnO transducers for ultrasonic biomicroscopy

NASA Astrophysics Data System (ADS)

Cannata, J. M.; Williams, J. A.; Zhou, Q. F.; Sun, L.; Shung, K. K.; Yu, H.; Kim, E. S.

2008-04-01

A simple fabrication technique was developed to produce high frequency (100MHz) self-focused single element transducers with sputtered zinc oxide (ZnO) crystal films. This technique requires the sputtering of a ZnO film directly onto a curved backing substrate. Transducers were fabricated by sputtering an 18μm thick ZnO layer on 2mm diameter aluminum rods with ends shaped and polished to produce a 2mm focus or f-number equal to one. The aluminum rod served a dual purpose as the backing layer and positive electrode for the resultant transducers. A 4μm Parylene matching layer was deposited on the transducers after housing and interconnect. This matching layer was used to protect the substrate and condition the transfer of acoustic energy between the ZnO film and the load medium. The pulse-echo response for a representative transducer was centered at 101MHz with a -6dB bandwidth of 49%. The measured two way insertion loss was 44dB. A tungsten wire phantom and an adult zebrafish eye were imaged to show the capability of these transducers.

Integration of gold-sputtered electrofluidic paper on wire-included analytical platforms for glucose biosensing.

PubMed

Núnez-Bajo, Estefanía; Carmen Blanco-López, M; Costa-García, Agustín; Teresa Fernández-Abedul, M

2017-05-15

This work describes the fabrication and evaluation of an electroanalytical paper-based platform based on the combination of both, reusable and disposable materials in order to generate simple, versatile and low-cost microfluidic devices. With this aim, a holder containing metal wires that act as reusable reference and counter electrodes has been developed. The gold-sputtered paper electrode is disposable and easily interchangeable, meanwhile the platform that includes reference and counter electrodes can be reused. The detection zone in the paper is delimited by drawing a hydrophobic line with an inexpensive permanent marker. The effect of experimental variables such as adding solutions through the face where the gold was sputtered (upwards) or through the opposite one (downwards) as well as of other working parameters were studied by cyclic and differential pulse voltammetry with potassium ferrocyanide as a common redox probe and indicator species for enzymatic, immune and DNA biosensing. Enzymatic determination of glucose in real food samples prove the feasibility of the developed system for the construction of electrochemical biosensors. Copyright © 2017 Elsevier B.V. All rights reserved.

Generation of dendritic cell-based vaccine using high hydrostatic pressure for non-small cell lung cancer immunotherapy

PubMed Central

Hradilova, Nada; Sadilkova, Lenka; Palata, Ondrej; Mysikova, Dagmar; Mrazkova, Hana; Lischke, Robert; Spisek, Radek; Adkins, Irena

2017-01-01

High hydrostatic pressure (HHP) induces immunogenic death of tumor cells which confer protective anti-tumor immunity in vivo. Moreover, DC pulsed with HHP-treated tumor cells induced therapeutic effect in mouse cancer model. In this study, we tested the immunogenicity, stability and T cell stimulatory activity of human monocyte-derived dendritic cell (DC)-based HHP lung cancer vaccine generated in GMP compliant serum free medium using HHP 250 MPa. DC pulsed with HHP-killed lung cancer cells and poly(I:C) enhanced DC maturation, chemotactic migration and production of pro-inflammatory cytokines after 24h. Moreover, DC-based HHP lung cancer vaccine showed functional plasticity after transfer into serum-containing media and stimulation with LPS or CD40L after additional 24h. LPS and CD40L stimulation further differentially enhanced the expression of costimulatory molecules and production of IL-12p70. DC-based HHP lung cancer vaccine decreased the number of CD4+CD25+Foxp3+ T regulatory cells and stimulated IFN-γ-producing tumor antigen-specific CD4+ and CD8+ T cells from non-small cell lung cancer (NSCLC) patients. Tumor antigen specific CD8+ and CD4+ T cell responses were detected in NSCLC patient’s against a selected tumor antigens expressed by lung cancer cell lines used for the vaccine generation. We also showed for the first time that protein antigen from HHP-killed lung cancer cells is processed and presented by DC to CD8+ T cells. Our results represent important preclinical data for ongoing NSCLC Phase I/II clinical trial using DC-based active cellular immunotherapy (DCVAC/LuCa) in combination with chemotherapy and immune enhancers. PMID:28187172

DAWN Coherent Wind Profiling Lidar Flights on NASA's DC-8 During GRIP

NASA Technical Reports Server (NTRS)

Kavaya, Michael J.; Beyon, Jeffrey Y.; Creary, Garfield A.; Koch, Grady J.; Petros, Mulugeta; Petzar, Paul J.; Singh, Upendra N.; Trieu, Bo C.; Yu, Jirong

2011-01-01

Almost from their invention, lasers have been used to measure the velocity of wind and objects; over distances of cm to 10s of km. Long distance (remote) sensing of wind has been accomplished with continuous-wave (CW), focused pulsed, and collimated pulsed lasers; with direct and coherent (heterodyne) optical detection; and with a multitude of laser wavelengths. Airborne measurement of wind with pulsed, coherent-detection lidar was first performed in 1971 with a CW CO2 laser1, in 1972 with a pulsed CO2 laser2, in 1993 with a pulsed 2-micron laser3, and in 1999 with a pulsed CO2 laser and nadir-centered conical scanning4. Of course there were many other firsts and many other groups doing lidar wind remote sensing with coherent and direct detection. A very large FOM coherent wind lidar has been built by LaRC and flown on a DC-8. However a burn on the telescope secondary mirror prevented the full demonstration of high FOM. Both the GRIP science product and the technology and technique demonstration from aircraft are important to NASA. The technology and technique demonstrations contribute to our readiness for the 3D Winds space mission. The data analysis is beginning and we hope to present results at the conference.

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

NASA Astrophysics Data System (ADS)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.