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Sample records for pulsed laser deposited

  1. Nonequilibrium Interlayer Transport in Pulsed Laser Deposition

    SciTech Connect

    Tischler, Jonathan Zachary; Eres, Gyula; Larson, Ben C; Rouleau, Christopher M; Zschack, P.; Lowndes, Douglas H

    2006-01-01

    We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited SrTiO3. Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.

  2. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  3. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  4. A new pulsed laser deposition technique: Scanning multi-component pulsed laser deposition method

    SciTech Connect

    Fischer, D.; Jansen, M.; Fuente, G. F. de la

    2012-04-15

    The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 deg. C.

  5. A new pulsed laser deposition technique: scanning multi-component pulsed laser deposition method.

    PubMed

    Fischer, D; de la Fuente, G F; Jansen, M

    2012-04-01

    The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 °C.

  6. 25 years of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; Ramachandra Rao, M. S.

    2014-01-01

    It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

  7. Pulsed Laser Deposition of Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Leppert, Valerie Jean

    Recent applications of pulsed laser deposition to the growth of various types of thin films suggest that it may be successfully used for III-V semiconductors. The goal of this work is to characterize the growth of GaAs using PLD and to determine the scope of the technique for this material. Therefore, laser ablation of GaAs is characterized here using spectroscopic analysis of the optical emission lines from the laser plasma plume. Additionally, the influence of growth conditions on GaAs films grown on a range of substrates is examined. In-situ analysis of the GaAs plume revealed that atomic, rather than molecular, arsenic is a major constituent of the GaAs plume. This may explain why no arsenic overpressure was needed to grow stoichiometric material. Nonlinear behavior of Ga emission intensity with laser power density indicated that several ablation mechanisms may be at work. EDAX studies indicate that deposited material is stoichiometric. Single crystal GaAs was grown on GaAs, Si and InP using PLD. A deposition rate of 0.65 mu m/hr was obtained. Defects consisting of dislocations, twinning and stacking faults were observed. An increase in laser power density decreased the minimum temperature for good film growth. Films were smooth overall, but suffered from an occasional inclusion of macroparticulates. Methods for screening particles were examined. The optimum growth temperature for GaAs/GaAs growth was 470^circC, but good films could be obtained as low as 335^circ C. GaAs/Si underwent a transition from a (110) oriented film to single crystal (100) film at 470 ^circC. Photoluminescence was obtained for the GaAs/GaAs and GaAs/InP systems. Well oriented films of GaAs (110) on an amorphous substrate (fused silica) were obtained for the first time using PLD at temperatures as low as 288^ circC. The effects of deposition temperature, deposition time, background gas, annealing, MOCVD overlayer and shadow masking were examined.

  8. Nanosecond laser ablation for pulsed laser deposition of yttria

    NASA Astrophysics Data System (ADS)

    Sinha, Sucharita

    2013-09-01

    A thermal model to describe high-power nanosecond pulsed laser ablation of yttria (Y2O3) has been developed. This model simulates ablation of material occurring primarily through vaporization and also accounts for attenuation of the incident laser beam in the evolving vapor plume. Theoretical estimates of process features such as time evolution of target temperature distribution, melt depth and ablation rate and their dependence on laser parameters particularly for laser fluences in the range of 6 to 30 J/cm2 are investigated. Calculated maximum surface temperatures when compared with the estimated critical temperature for yttria indicate absence of explosive boiling at typical laser fluxes of 10 to 30 J/cm2. Material ejection in large fragments associated with explosive boiling of the target needs to be avoided when depositing thin films via the pulsed laser deposition (PLD) technique as it leads to coatings with high residual porosity and poor compaction restricting the protective quality of such corrosion-resistant yttria coatings. Our model calculations facilitate proper selection of laser parameters to be employed for deposition of PLD yttria corrosion-resistive coatings. Such coatings have been found to be highly effective in handling and containment of liquid uranium.

  9. Pulsed laser deposition of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  10. Bismuth thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  11. Boron carbon nitride films deposited by sequential pulses laser deposition

    NASA Astrophysics Data System (ADS)

    Dinescu, M.; Perrone, A.; Caricato, A. P.; Mirenghi, L.; Gerardi, C.; Ghica, C.; Frunza, L.

    1998-05-01

    In this paper, we report the successful growth of c-BCN thin films by reactive pulsed laser ablation (RPLA) of a rotating target (3 Hz) formed of two semidisks: one of h-BN and the other one of graphite, with the substrate at room temperature. The irradiations were performed in vacuum (10 -5 Pa) and in N 2 ambient gas (1-100 Pa) using a XeCl excimer laser ( λ=308 nm, τFWHM=30 ns) with a fluence of 5 J/cm 2. Series of 10,000 pulses at a repetition rate of 10 Hz were directed to target. Different analysis techniques pointed out the synthesis of h-BCN and c-BCN. Microhardness measurements at the deposited films evidence high values up to 2.9 GPa. Secondary ion mass spectroscopy (SIMS) profiles showed the presence of layers of 600-700 nm thickness, with uniform concentrations of B, C and N in the films. Uniform signals of BN and CN, which are related to the BCN bond, are also present. X-ray photoelectron spectroscopy (XPS) studies pointed out the BCN compound formation. The deconvolution of B 1s recorded spectra evidenced a strong peak (centered at 188 eV) assigned to B bonded in BC 2N; the N 1s and C 1s spectra also confirm the BCN formation. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analysis evidenced the presence of c-BCN phase (with crystallites of 30-80 nm) and h-BCN phase as well. The N 2 pressure strongly influenced the BCN formation and, consequently, the properties of the deposited films.

  12. Pulsed laser deposition vs. matrix assisted pulsed laser evaporation for growth of biodegradable polymer thin films

    NASA Astrophysics Data System (ADS)

    Mercado, A. L.; Allmond, C. E.; Hoekstra, J. G.; Fitz-Gerald, J. M.

    2005-08-01

    Thin films of poly (lactide-co-glycolide) (PLGA), a biodegradable polymer, were deposited on Si wafers by both conventional pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) using chloroform (CHCl3) as a matrix solvent. This research represents an initial study to investigate the deposition characteristics of each technique at comparable conditions to gain insight into the transport and degradation mechanisms of each approach. The deposited materials were characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (1H NMR), and gel permeation chromatography (GPC) with refractive index (RI) detection. While FTIR and NMR results do not show a measurable departure from the native, in sharp contrast GPC results show a significant change (up to 95%) in molecular weight for both deposition methods. This result makes it clear that it is possible to overlook substantial degradation when incomplete chemical analysis is conducted.

  13. Pulsed Laser Deposition of the Ni-Base Superalloy Films

    NASA Astrophysics Data System (ADS)

    Shin, Joonghan; Mazumder, Jyotirmoy

    2016-03-01

    Ni-base superalloy films were deposited on single-crystal (SC) Ni-base superalloy substrates from a target with the same alloy composition by pulsed laser deposition (PLD) technique. Microstructure and growth behavior of the films deposited were investigated by X-ray diffraction and scanning electron microscopy, and atomic force microscope. The homoepitaxial growth of the SC Ni-base superalloy film occurred at the 1123 K (850 °C) substrate temperature and 2 J/cm2 pulse energy. Films generally exhibited a strong polycrystalline characteristic as the substrate temperature and pulse energy increased. The SC film had a smooth surface. The measured root mean square roughness of the SC film surface was ~6 nm. Based on the Taguchi analysis, the substrate temperature and pulse energy were the most significant process parameters influencing the structural characteristics of the films. Also, the influence of the pulse repletion rate and deposition time was not found to be significant.

  14. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    DOEpatents

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  15. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  16. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  17. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  18. Pulsed-laser deposition of crystalline Teflon (PTFE) films

    NASA Astrophysics Data System (ADS)

    Li, S. T.; Arenholz, E.; Heitz, J.; Bäuerle, D.

    1998-01-01

    Thin films of crystalline polytetrafluoroethylene (PTFE) were prepared by pulsed-laser deposition using 248 nm UV-excimer-laser radiation. Pressed powder pellets and bulk PTFE have been employed as target material. The films were analyzed by means of optical polarization microscopy, stylus profilometry, capacity measurements, XRD, and IR spectroscopy. The effect of substrate temperature Ts on the morphology and crystallinity of the films was studied. Films deposited from pressed powder targets at sufficiently high Ts consist mainly of spherulite-like microcrystallites. These films are continuous, pinhole-free, well adherent to the substrate, and have a composition which is similar to that of the target material. It is suggested that film formation is based on laser-assisted material transfer with subsequent melting and crystallization. They are superior to films deposited from PTFE bulk targets, cut from a solid rod, with respect to film morphology, deposition rate, film cohesion, and optical and electrical properties.

  19. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    NASA Astrophysics Data System (ADS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  20. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  1. Pulsed Laser Deposition of Nanoporous Cobalt Thin Films

    PubMed Central

    Jin, Chunming; Nori, Sudhakar; Wei, Wei; Aggarwal, Ravi; Kumar, Dhananjay; Narayan, Roger J.

    2013-01-01

    Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ~5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications. PMID:19198344

  2. Crystallographic texture in pulsed laser deposited hydroxyapatite bioceramic coatings

    PubMed Central

    Kim, Hyunbin; Camata, Renato P.; Lee, Sukbin; Rohrer, Gregory S.; Rollett, Anthony D.; Vohra, Yogesh K.

    2008-01-01

    The orientation texture of pulsed laser deposited hydroxyapatite coatings was studied by X-ray diffraction techniques. Increasing the laser energy density of the KrF excimer laser used in the deposition process from 5 to 7 J/cm2 increases the tendency for the c-axes of the hydroxyapatite grains to be aligned perpendicular to the substrate. This preferred orientation is most pronounced when the incidence direction of the plume is normal to the substrate. Orientation texture of the hydroxyapatite grains in the coatings is associated with the highly directional and energetic nature of the ablation plume. Anisotropic stresses, transport of hydroxyl groups and dehydroxylation effects during deposition all seem to play important roles in the texture development. PMID:18563207

  3. History and current status of commercial pulsed laser deposition equipment

    NASA Astrophysics Data System (ADS)

    Greer, James A.

    2014-01-01

    This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm2 up to 10 m2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R&D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications.

  4. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  5. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  6. Fabrication of Au nanostructures by pulsed laser deposition in air

    NASA Astrophysics Data System (ADS)

    Nikov, Rumen G.; Dikovska, Anna Og.; Nedyalkov, Nikolay N.; Atanasov, Petar A.

    2016-01-01

    Results on fabrication of Au nanostructures by laser ablation in open air are presented. The ablation of the Au target is performed in air environment by nanosecond laser pulses delivered by Nd:YAG laser system operated at λ = 355 nm. Due to the high density of the ambient atmosphere, the intensive collisions of the plume spices result in formation of nanoparticles and aggregates by condensation close to the target. The produced nanoagregates are deposited on a quartz substrate where grow in a specific nanostructure. Diagnostics of the laser-generated plasma for the laser fluences used in this study is performed. Study based on change of ambient conditions shows that the increase of the air pressure from 10 Torr to atmospheric one leads to transition from thin film to porous structures. It is found that the surface morphology of the structures produced by pulsed laser deposition (PLD) in open air strongly depends on the substrate-target distance. The electrical properties of the obtained structures are studied by measurement of their electrical resistance. It is found that the conductivity of the structures strongly depends on their morphology. The fabricated structures have potential for application in the field of electronics and sensors.

  7. Pulsed laser deposition of hydroxyapatite film on laser gas nitriding NiTi substrate

    NASA Astrophysics Data System (ADS)

    Yang, S.; Xing, W.; Man, H. C.

    2009-09-01

    A hydroxyapatite (HA) film was deposited on laser gas nitriding (LGN) NiTi alloy substrate using pulsed laser deposition technique. TiN dendrite prepared by LGN provided a higher number of nucleation sites for HA film deposition, which resulted in that a lot number of HA particles were deposited on TiN dendrites. Moreover, the rough LGN surface could make the interface adhesive strength between HA film and substrate increase as compared with that on bare NiTi substrate.

  8. Femtosecond pulsed laser deposition of biological and biocompatible thin layers

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Smausz, T.; Kecskeméti, G.; Klini, A.; Bor, Zs.

    2007-07-01

    In our study we investigate and report the femtosecond pulsed laser deposition of biological and biocompatible materials. Teflon, polyhydroxybutyrate, polyglycolic-acid, pepsin and tooth in the form of pressed pellets were used as target materials. Thin layers were deposited using pulses from a femtosecond KrF excimer laser system (FWHM = 450 fs, λ = 248 nm, f = 10 Hz) at different fluences: 0.6, 0.9, 1.6, 2.2, 2.8 and 3.5 J/cm 2, respectively. Potassium bromide were used as substrates for diagnostic measurements of the films on a FTIR spectrometer. The pressure in the PLD chamber was 1 × 10 -3 Pa, and in the case of tooth and Teflon the substrates were heated at 250 °C. Under the optimized conditions the chemical structure of the deposited materials seemed to be largely preserved as evidenced by the corresponding IR spectra. The polyglycolic-acid films showed new spectral features indicating considerable morphological changes during PLD. Surface structure and thickness of the layers deposited on Si substrates were examined by an atomic force microscopy (AFM) and a surface profilometer. An empirical model has been elaborated for the description of the femtosecond PLD process. According to this the laser photons are absorbed in the surface layer of target resulting in chemical dissociation of molecules. The fast decomposition causes explosion-like gas expansion generating recoil forces which can tear off and accelerate solid particles. These grains containing target molecules without any chemical damages are ejected from the target and deposited onto the substrate forming a thin layer.

  9. Thermochromic VO2 on Zinnwaldite Mica by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mathevula, L.; Ngom, B. D.; Kotsedi, L.; Sechogela, P.; Doyle, T. B.; Ghouti, M.; Maaza, M.

    2014-09-01

    VO2 thin films have been deposited by pulsed laser deposition on Zinnwaldite Mica substrates. The crystal structure, chemical composition, morphology were determined and the semiconductor/metal transition (SMT) properties of the deposited films were investigated. Without any post annealing, the films exhibit a textured nature with a VO2 (0 1 1) preferred crystallographic orientation and an elevated thermal variation of the electric resistance ratio RS/RM through the SMT at T ≈ 68 °C of the order of 104 and a narrow ∼7 °C hysteresis. In addition, the growth of the VO2 crystallites seem to be governed likely by a Volmer-Weber or Stranski-Krastanov mechanisms and certainly not a Frank-van Der Merwe process.

  10. Matrix assisted pulsed laser deposition of melanin thin films

    NASA Astrophysics Data System (ADS)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  11. Resonant infrared pulsed laser deposition of a polyimide precursor

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2007-04-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

  12. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  13. Indomethacin nanoparticles directly deposited on the fluidized particulate excipient by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nagare, Sanshiro; Senna, Mamoru

    2004-12-01

    Nanoparticles of indomethacin (IM), a sparingly soluble drug in water, were prepared by pulsed laser deposition with Nd: YAG laser at 1064 nm. Variation of the deposition rate (DR) with various experimental conditions, such as species and pressure of the background gas, and laser fluence, was discussed. We obtained highest DR, 2.7 μg/cm2min, under He at 100 Pa with the laser fluence of 25 J/cm2. In the deposited solid product, no trace of drug decomposition was observed by HPLC. Deposition of IM nanoparticles was achieved on the fluidized excipient, potato starch particles of 20 μm regime. By TEM observation and zeta potential distribution measurement, we confirmed that surface of excipient particles was fully covered by nanoparticles of IM. Thus, the present method enables us a new method of one-step preparation of drug-excipient nanocomposites to eliminate tedious problems associated with nanoparticles handling.

  14. Pulsed laser deposition of compact high adhesion polytetrafluoroethylene thin films

    NASA Astrophysics Data System (ADS)

    Smausz, Tomi; Hopp, Béla; Kresz, Norbert

    2002-08-01

    Polytetrafluoroethylene (PTFE) thin films were prepared from pressed powder pellets via pulsed laser deposition by using ArF (193 nm) excimer laser. The applied laser fluences were in the 1.6-10 J cm-2 range, the substrate temperature was varied between 27°C and 250°C and post-annealing of the films was carried out in air at temperatures between 320°C and 500°C. Films deposited at 250°C substrate temperature were found to be stoichiometric while those prepared at lower temperatures were fluorine deficient. Morphological analyses proved that the film thickness did not significantly depend on the substrate temperature and the post annealing at 500°C resulted in a thickness reduction of approximately 50%. It was demonstrated that the films prepared at 8.2 J cm-2 fluence and annealed at 500°C followed by cooling at 1°C min-1 rate were compact, pinhole-free layers. The adherence of films to the substrates was determined by tensile strength measurements. Tensile strength values up to 2.4 MPa were obtained. These properties are of great significance when PTFE films are fabricated for the purpose of protecting coatings.

  15. Nanostructuring and texturing of pulsed laser deposited hydroxyapatite thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hyunbin; Catledge, Shane; Vohra, Yogesh; Camata, Renato; Lacefield, William

    2003-03-01

    Hydroxyapatite (HA) [Ca_10(PO_4)_6(OH)_2] is commonly deposited onto orthopedic and dental metallic implants to speed up bone formation around devices, allowing earlier stabilization in a patient. Pulsed laser deposition (PLD) is a suitable means of placing thin HA films on these implants because of its control over stoichiometry, crystallinity, and nanostructure. These characteristics determine the mechanical properties of the films that must be optimized to improve the performance of load-bearing implants and other devices that undergo bone insertion. We have used PLD to produce nanostructured and preferentially oriented HA films and evaluated their mechanical properties. Pure, highly crystalline HA films on Ti-6Al-4V substrates were obtained using a KrF excimer laser (248nm) with energy density of 4-8 J/cm^2 and deposition temperature of 500-700^rcC. Scanning electron and atomic force microscopies reveal that our careful manipulation of energy density and substrate temperature has led to films made up of HA grains in the nanometer scale. Broadening of x-ray diffraction peaks as a function of deposition temperature suggests it may be possible to control the film nanostructure to a great extent. X-ray diffraction also shows that as the laser energy density is increased in the 4-8 J/cm^2 range, the hexagonal HA films become preferentially oriented along the c-axis perpendicular to the substrate. Texture, nanostructure, and phase make-up all significantly influence the mechanical properties. We will discuss how each of these factors affects hardness and Young's modulus of the HA films as measured by nanoindentation.

  16. Reactive pulsed laser deposition of gold nitride thin films

    NASA Astrophysics Data System (ADS)

    Caricato, A. P.; Fernàndez, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, F.; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Y. M.; Azoulay, J.; Meda, L.

    2007-07-01

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10 -8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 -8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.

  17. Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition

    SciTech Connect

    Kolagani, R; Friedrich, S

    2008-06-25

    The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

  18. Laser energy density, structure and properties of pulsed-laser deposited zinc oxide films

    NASA Astrophysics Data System (ADS)

    Tsoutsouva, M. G.; Panagopoulos, C. N.; Kompitsas, M.

    2011-05-01

    Zinc oxide thin films were deposited on soda lime glass substrates by pulsed laser deposition in an oxygen-reactive atmosphere at 20 Pa and a constant substrate temperature at 300 °C. A pulsed KrF excimer laser, operated at 248 nm with pulse duration 10 ns, was used to ablate the ceramic zinc oxide target. The structure, the optical and electrical properties of the as-deposited films were studied in dependence of the laser energy density in the 1.2-2.8 J/cm 2 range, with the aid of X-ray Diffraction, Atomic Force Microscope, Transmission Spectroscopy techniques, and the Van der Pauw method, respectively. The results indicated that the structural and optical properties of the zinc oxide films were improved by increasing the laser energy density of the ablating laser. The surface roughness of the zinc oxide film increased with the decrease of laser energy density and both the optical bang gap and the electrical resistivity of the film were significantly affected by the laser energy density.

  19. Properties of pulsed laser deposited fluorinated hydroxyapatite films on titanium

    SciTech Connect

    Rau, J.V.; Smirnov, V.V.; Laureti, S.; Generosi, A.; Varvaro, G.; Fosca, M.; Ferro, D.; Cesaro, S. Nunziante; Albertini, V. Rossi; Barinov, S.M.

    2010-09-15

    Fluorinated hydroxyapatite coated titanium was investigated for application as implant coating for bone substitute materials in orthopaedics and dentistry. Pulsed laser deposition technique was used for films preparation. Fluorinated hydroxyapatite target composition, Ca{sub 10}(PO{sub 4}){sub 6}F{sub 1.37}(OH){sub 0.63}, was maintained at 2 J/cm{sup 2} of laser fluence and 500-600 {sup o}C of the substrate temperature. Prepared films had a compact microstructure, composed of spherical micrometric-size aggregates. The average surface roughness resulted to be of 3 nm for the film grown at 500 {sup o}C and of 10 nm for that grown at 600 {sup o}C, showing that the temperature increase did not favour the growth of a more fine granulated surface. The films were polycrystalline with no preferential growth orientation. The films grown at 500-600 {sup o}C were about 8 {mu}m thick and possessed a hardness of 12-13 GPa. Lower or higher substrate temperature provides the possibility to obtain coatings with different fine texture and roughness, thus tayloring them for various applications.

  20. Investigation of new stilbazolium dye thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sotirov, S.; Todorova, M.; Draganov, M.; Penchev, P.; Bakalska, R.; Serbezov, V.

    2013-03-01

    In present work we report the analysis of thin films and targets from new stilbazolium dye E-4-(2-(4- hydroxynaphthalen-1-yl)vinyl)-1-octylquinolinium iodide (D1) deposited by Pulsed Laser Deposition (PLD) technique using high power UV TEA N2 laser. The thin films are deposited onto substrates - KBr, 316L SS alloy, optical glass and aluminum foil. The films were characterized by FTIR spectroscopy, bright field microscopy, fluorescence microscopy and atomic force microscopy (AFM) analysis. FTIR spectroscopic analysis of thin films and target material shows small differences between deposited films and native substance. The films are found to be homogeneous by AFM results and without any cracks and droplets on the surfaces. The present study demonstrates the ability of PLD technique to provide thin films from new stilbazolium dyes with good quality when they are applied as non-linear optical (NLO) organic materials on different type of substrates.

  1. Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

    DTIC Science & Technology

    2014-09-01

    AFRL-RX-WP-JA-2015-0050 SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL-BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) Nicholas R Glavin...2014 4. TITLE AND SUBTITLE SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL- BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) 5a. CONTRACT NUMBER...deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (ɦ-BN) thin films on crystalline

  2. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  3. Pulsed laser deposition and characterizations of pyrochlore iridate thin films

    NASA Astrophysics Data System (ADS)

    Starr, Matthew; Aviles-Acosta, Jaime; Xie, Yuantao; Zhu, Wenka; Li, Zhen; Chen, Aiping; Li, Nan; Tao, Chenggang; Jia, Quanxi; Heremans, J. J.; Zhang, S. X.

    Pyrochlore iridates have attracted growing interest in recent years because of their potential to realize novel topological phases. While most of the previous studies have focused on polycrystalline and single crystalline bulk samples, epitaxial thin films offer a unique platform for controllable tuning of material parameters such as oxygen stoichiometry and elastic strain to achieve new electronic states. In this talk, we will present the growth and characterizations of epitaxial thin films of pyrochlore Y2Ir2O7 and Bi2Ir2O7 that are predicted to host topologically non-trivial states. The iridate thin films were grown by pulsed laser deposition at different conditions, and a narrow window for epitaxial growth was determined. Characterizations of crystalline structures were performed using X-ray diffraction and transmission electron microscopy to establish a growth parameter-structure phase diagram. The compositions of thin films were determined by energy dispersive X-ray spectroscopy, and the surface morphologies were characterized using atomic force microscopy and scanning tunneling microscopy. Magneto-transport studies indicate a strong dependence of transport properties on the oxygen stoichiometry and the film thickness.

  4. Ion mixing of pulsed laser deposited hydroxylapatite (HA)

    SciTech Connect

    Alford, T.L.; Russell, S.W.; Pizziconi, V.B.; Mayer, J.W.; Levine, T.E.; Nastasi, M.; Cotell, C.M.; Auyeung, R.C.Y.

    1995-12-31

    Hydroxylapatite (HA) is a calcium-phosphate-bioceramic material which has drawn much attention due to its excellent biocompatibility and tissue bioactivity properties. The use of ion-beam techniques to enhance selected properties of bioactive materials, such as the adhesion of hydroxylapatite (HA) coatings on titanium-based substrates has been investigated. In this study, very thin HA films on titanium substrates were created by pulsed laser deposition techniques. Ion irradiations were carried out using 260-keV argon ions, with fluences of 0.25--50 {times} 10{sup 15} ions/cm{sup 2}, and at room temperature. Rutherford backscattering spectrometry was used to evaluate sample composition before and after irradiation. The amount of mixing was quantified by the mixing rate (the amount of atomic displacement due to an irradiation fluence). This pilot data indicates that mixing was evident after sufficient ion irradiation. The ramification of this preliminary study has provided a quantitative measure of ion mixing as a potential prosthetic biomaterial surface modification technique.

  5. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Antonova, K.; Duta, L.; Szekeres, A.; Stan, G. E.; Mihailescu, I. N.; Anastasescu, M.; Stroescu, H.; Gartner, M.

    2017-02-01

    Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A1LO mode frequency was analysed and connected to the orientation of the particles' optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers' properties is discussed on this basis.

  6. Pulsed laser deposition of transition metal oxides for secondary batteries

    SciTech Connect

    Striebel, K.A.; Deng, C.Z.; Cairns, E.J.

    1995-12-31

    Pulsed laser deposition has been used to prepare thin films of several complex metal oxides of significance in secondary batteries from a single stoichiometric target with a substrate temperature of 600 C in the presence of 200 mtorr O{sub 2}. Films of the candidate bifunctional air electrocatalysts, for metal air batteries, La{sub 0.6}Ca{sub 0.4}CoO{sub 3}, La{sub 0.6}Sr{sub 0.4}CoO{sub 3}, La{sub 0.6}Ca{sub 0.4}MnO{sub 3} and La{sub 0.6}Sr{sub 0.4}MnO{sub 3} were prepared on glassy carbon substrates. Glassy carbon was found to either erode during the ablation process (with the cobaltates) or cause film cracking after deposition because of its extremely low coefficient of thermal expansion. The use of stainless steel substrates yielded 0.3 {micro}m-thick dense films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} and La{sub 0.6}Ca{sub 0.4}MnO{sub 3} which were suitable for electrochemical measurements in concentrated alkaline electrolytes. LiMn{sub 2}O{sub 4} and LiCoO{sub 2} films were prepared at thickness` of 0.3 {micro}m and 1.5 {micro}m. The 0.3 {micro}m-thick films delivered 176 mC/cm{sup 2}-{micro}m and 323 mC/cm{sup 2} for LiMn{sub 2}O{sub 4} and LiCoO{sub 2}, respectively, in 1 M LiClO{sub 4}/PC.

  7. thin films prepared by pulsed laser deposition on different substrates

    NASA Astrophysics Data System (ADS)

    Navasery, M.; Halim, S. A.; Dehzangi, A.; Soltani, N.; Bahmanrokh, G.; Erfani H, M.; Kamalianfar, A.; Pan, K. Y.; Chang, S. C.; Chen, S. K.; Lim, K. P.; Awang Kechik, M. M.

    2014-09-01

    Perovskite manganite La2/3Ca1/3MnO3 thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal-insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature ( T P) have been fitted with the relation , indicating that the electron-electron scattering affects the conduction of these materials. The high-temperature resistivity data ( T > T P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N ( E F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn-O-Mn bond angle, which decreases the double exchange coupling of Mn3+-O2-Mn4+ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.

  8. Understanding the deposition mechanism of pulsed laser deposited B-C films using dual-targets

    SciTech Connect

    Zhang, Song; He, Zhiqiang; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng; Ji, Xiaoli; Lu, Wenzhong

    2014-04-21

    Boron carbide thin films with stoichiometry (boron-carbon atomic ratio) range of 0.1 ∼ 8.9 were fabricated via pulsed laser deposition by using boron-carbon dual-targets. However, this experimental data on stoichiometry were smaller than the computer simulation values. The discrepancy was investigated by studies on composition and microstructure of the thin films and targets by scanning electron microscopy, excitation laser Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the boron liquid droplets were formed by phase explosion after laser irradiation on boron sector. Part of the boron droplets would be lost via ejection in the direction of laser beam, which is tilted 45° to the surface of substrate.

  9. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    SciTech Connect

    Geohegan, D.B.

    1994-09-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

  10. Pulsed Laser Deposition of YBCO With Yttrium Oxide Buffer Layers (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0092 PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT) Paul N. Barnes, Timothy J. Haugan...Paper Postprint 01 January 2002 – 01 January 2004 4. TITLE AND SUBTITLE PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT...Textured metallic substrate based HTS coated conductors with the YBCO /CeO2/YSZ/CeO2/Ni architecture have already been shown to exhibit high current

  11. Vitroceramic interface deposited on titanium substrate by pulsed laser deposition method.

    PubMed

    Voicu, Georgeta; Miu, Dana; Dogaru, Ionut; Jinga, Sorin Ion; Busuioc, Cristina

    2016-08-30

    Pulsed laser deposition (PLD) method was used to obtain biovitroceramic thin film coatings on titanium substrates. The composition of the targets was selected from SiO2-CaO-P2O5-(CaF2) systems and the corresponding masses were prepared using the sol-gel method. The depositions were performed in oxygen atmosphere (100mTorr), while the substrates were heated at 400°C. The PLD deposited films were analysed through different experimental techniques: X-ray diffraction, scanning (SEM, EDX) and transmission (HRTEM, SAED) electron microscopy and infra-red spectroscopy coupled with optical microscopy. They were also biologically tested by in vitro cell culture and the contact angle was determined. The bioevaluation results indicate a high biocompatibilty of the obtained materials, demonstrating their potential use for biomedical applications.

  12. Tb and Ce Doped Y123 Films Processed by Pulsed Laser Deposition

    DTIC Science & Technology

    2004-05-01

    onto SrTiO3 single crystal substrates by pulsed laser ablation. Doped YBCO films were characterized for Tc, magnetic field dependence of Jc (at 77 K...AFRL-PR-WP-TP-2006-221 Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION Joseph W. Kell, Timothy J. Haugan, Mary Frances Locke...From - To) 05/10/2003 — 05/10/2004 4. TITLE AND SUBTITLE Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION . 5a. CONTRACT NUMBER In

  13. Resonant Infrared Matrix Assisted Pulsed Laser Deposition of Polymers: Improving the Morphology of As-Deposited Films

    NASA Astrophysics Data System (ADS)

    Bubb, Daniel; Papantonakis, Michael; Collins, Brian; Brookes, Elijah; Wood, Joshua; Gurudas, Ullas

    2008-03-01

    Resonant infrared matrix assisted pulsed laser deposition has been used to deposit thin films of PMMA, a widely used industrial polymer. This technique is similar to conventional pulsed laser deposition, except that the polymer to be deposited is dissolved in a solvent and the solution is frozen before ablation in a vacuum chamber. The laser wavelength is absorbed by a vibrational band in the frozen matrix. The polymer lands on the substrate to form a film, while the solvent is pumped away. Our preliminary results show that the surface roughness of the as-deposited films depends strongly on the differential solubility radius, as defined by Hansen solubility parameters of the solvent and the solubility radius of the polymer. Our results will be compared with computational and experimental studies of the same polymer using a KrF (248 nm) laser. The ejection mechanism will be discussed as well as the implications of these results for the deposition of smooth high quality films.

  14. Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film.

    SciTech Connect

    Vikram, S.

    1999-01-20

    We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation.

  15. Pulsed laser deposition of polyhydroxybutyrate biodegradable polymer thin films using ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Kecskemeti, G.; Smausz, T.; Kresz, N.; Tóth, Zs.; Hopp, B.; Chrisey, D.; Berkesi, O.

    2006-11-01

    We demonstrated the pulsed laser deposition (PLD) of high quality films of a biodegradable polymer, the polyhydroxybutyrate (PHB). Thin films of PHB were deposited on KBr substrates and fused silica plates using an ArF ( λ = 193 nm, FWHM = 30 ns) excimer laser with fluences between 0.05 and 1.5 J cm -2. FTIR spectroscopic measurements proved that at the appropriate fluence (0.05, 0.09 and 0.12 J cm -2), the films exhibited similar functional groups with no significant laser-produced modifications present. Optical microscopic images showed that the layers were contiguous with embedded micrometer-sized grains. Ellipsometric results determined the wavelength dependence ( λ ˜ 245-1000 nm) of the refractive index and absorption coefficient which were new information about the material and were not published in the scientific literature. We believe that our deposited PHB thin films would have more possible applications. For example to our supposal the thin layers would be applicable in laser induced forward transfer (LIFT) of biological materials using them as absorbing thin films.

  16. The Application of Pulsed Laser Deposition in Producing Bioactive Ceramic Films

    NASA Astrophysics Data System (ADS)

    Zhao, Yafan; Chen, Chuanzhong; Wang, Diangang

    Pulsed laser deposition (PLD) is a relatively new technique for producing thin films. It presents unique advantages for the deposition of bioactive ceramics. The mechanism and characteristics of the technique PLD are introduced. Its applications and current research status in hydroxyapatite and bioglass thin films are reviewed. The effect of processing parameters of PLD, including atmosphere, substrate temperature, laser wavelength and target properties, on the structures and the properties of the hydroxyapatite film, is analyzed in detail. Future application trends are also analyzed.

  17. Pulse laser deposited nanostructured ZnO thin films: a review.

    PubMed

    Kumar, Rajesh; Kumar, Girish; Umar, Ahmad

    2014-02-01

    This review summarizes the work principles of pulse laser deposition (PLD) apparatus, physical processes like ablation, and plasma plume formation accompanying the deposition of un-doped ZnO from target to substrate material. Various modes of deposition and factors influencing the properties of thin films such as substrate temperature, background gas pressure, laser energy density (laser fluence), target to substrate distance, repetition rate, oxygen partial pressure in deposition chamber, deposition time and post growth annealing which control deposition parameters such as adsorption, desorption, surface diffusion, nucleation, and crystallization/re-crystallization are also discussed in this review. Moreover, various film properties such as morphology, roughness of the film surface, film thickness, grain size, optical transmittance, sensitivity, electrical conductivity, uniformity and electrical resistivity of the deposited ZnO thin films have also been enumerated in the present review.

  18. Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

    SciTech Connect

    Gayathri, S.; Sridharan, M. E-mail: m.sridharan@ece.sastra.edu; Kumar, N.; Krishnan, R. E-mail: m.sridharan@ece.sastra.edu; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.

    2013-12-15

    Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp{sup 2} bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp{sup 3} domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp{sup 2} fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm{sup 2}. The super low friction mechanism is explained by low sliding resistance of a-C/sp{sup 2} and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm{sup 2} is related to widening of the intergrain distance caused by transformation from sp{sup 2} to sp{sup 3} hybridized structure.

  19. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    SciTech Connect

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  20. Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

    NASA Technical Reports Server (NTRS)

    Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

    1992-01-01

    The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

  1. Effects of deposition rate and thickness on the properties of YBCO films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shi, D. Q.; Ko, R. K.; Song, K. J.; Chung, J. K.; Choi, S. J.; Park, Y. M.; Shin, K. C.; Yoo, S. I.; Park, C.

    2004-02-01

    YBCO films with various thicknesses from 100 nm to 1.6 µm were deposited on single crystal SrTiO3 substrates by pulsed laser deposition (PLD). The effects of thickness and deposition rate—by means of controlling the pulsed laser frequency—on the critical current density (Jc) were studied. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to examine the orientation, crystallization and surface quality. The amount of a-axis YBCO component evaluated from the ratio of XRD chi-scan intensities of the a-axis and c-axis for the YBCO (102) plane increased as the YBCO film became thicker. SEM was used to analyse the surface of YBCO film, and it was shown that the surface of YBCO film became rougher with increasing thickness. There were many large singular outgrowths and networks of outgrowths on the surface of the YBCO films with thickness greater than 0.4 µm. The increased amount of a-axis YBCO component and the coarse microstructure of the thick YBCO film caused degradation of Jc with increasing thickness.

  2. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  3. In Situ Creation of Nanoparticles from YBCO by Pulsed Laser Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    entailed pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from ~3 to 5 nm and...pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from 3 to 5 nm and are typical...are extremely small pieces of matter that have dimensions on the order of a few nm . It may well be possible to use nanoparti- cles of YBCO itself as

  4. XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Dolo, J. J.; Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Dejene, B. F.

    2010-04-01

    This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd2O2S:Tb3 + thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd2O2S:Tb3 + emission. The main emission peak due to the 5D4-7F5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd2O3 layer, with small amounts of Gd2S3, on the surface.

  5. Pyramidal growth of ceria nanostructures by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bârcă, E. S.; Filipescu, M.; Luculescu, C.; Birjega, R.; Ion, V.; Dumitru, M.; Nistor, L. C.; Stanciu, G.; Abrudeanu, M.; Munteanu, C.; Dinescu, M.

    2016-02-01

    We report in this paper on the deposition and characterization of CeO2 nanostructured thin films with hierarchical morphology. Micro-sized ceria powder (CeO2, 99.9% purity) was pressed to obtain a ceramic target. An ArF laser working at 193 nm irradiated the target in controlled oxygen gas flow at constant pressure (0.1 mbar). Silicon wafers used as substrates for thin films were heated at different temperatures, up to 773 K. The influence of substrate temperature on the structure and surface morphology of ceria thin films was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and scanning electron microscopy (SEM). The refractive indices and information about roughness and thickness were revealed by spectroellipsometry. Crystalline cubic ceria thin films exhibiting a hierarchical structure that combines columnar and dendritic growth were obtained at temperatures above 473 K. For the samples obtained at 773 K, columns ending in pyramidal formations with sharp edges and sizes of hundreds of nanometers were observed, indicating a high crystallinity of the layer. XRD analysis reveals a consistent increase of the X-ray coherence length/crystallite size along the [111] direction with increasing temperature. Using a semi-empirical formula, Raman crystallites sizes were calculated and it was found that size increases with the temperature increasing. The spectroellipsometry investigations evidenced the increasing of refractive index with the substrate temperature increase. High surface roughness and pyramidal structures were noticed from the atomic force microscopy images for layers deposited at substrate temperature above 473 K.

  6. Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

    NASA Astrophysics Data System (ADS)

    De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

    2012-09-01

    Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

  7. Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

    SciTech Connect

    Melaibari, Ammar A.; Molian, Pal

    2012-11-15

    Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered 'brick-bridge-mortar' nacre of AlMgB{sub 14} (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB{sub 14}. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB{sub 14}/Ti system revealed that the brick is to be 250 nm thick, 9 {mu}m lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

  8. Pulsed laser deposition of polytetrafluoroethylene-gold composite layers

    NASA Astrophysics Data System (ADS)

    Kecskeméti, Gabriella; Smausz, Tomi; Berta, Zsófia; Hopp, Béla; Szabó, Gábor

    2014-11-01

    PTFE-metal composites are promising candidates for use as sensor materials. In present study PTFE-Au composite layers were deposited by alternated ablation of pressed Teflon pellets and gold plates with focused beam of an ArF excimer laser at 6 J/cm2 fluence, while keeping the substrate at 150 °C temperature. The morphology and chemical composition of the ~3-4 μm average thickness layers was studied by electron microscopy and energy dispersive X-ray spectroscopy. The layers were mainly formed of PTFE gains and clusters which are covered by a conductive Au film. For testing the applicability of such layers as sensing electrodes, composite layers were prepared on one of the two neighbouring electrode of a printed circuit board. Cholesterol and glucose solutions were prepared using 0.1M NaOH solvent containing 10% Triton X-100 surfactant. The electrodes were immersed in the solutions and voltage between the electrodes was measured while a constant current was drawn through the sample. The influence of the analyte concentration on the power spectral density of the voltage fluctuation was studied.

  9. Improved passivation of the ZnO/Si interface by pulsed laser deposition

    SciTech Connect

    Gluba, M. A.; Nickel, N. H.; Rappich, J.; Hinrichs, K.

    2013-01-28

    Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of Almost-Equal-To 10{sup 12} cm{sup -2}. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.

  10. PULSED LASER DEPOSITION OF MAGNETIC MULTILAYERS FOR THE GRANT ENTITLED LASER PROCESSING OF ADVANCED MAGNETIC MATERIALS

    SciTech Connect

    Monica Sorescu

    2003-10-11

    Nanostructured magnetite/T multilayers, with T = Ni, Co, Cr, have been prepared by pulsed laser deposition. The thickness of individual magnetite and metal layers takes values in the range of 5-40 nm with a total multilayer thickness of 100-120 nm. X-ray diffraction has been used to study the phase characteristics as a function of thermal treatment up to 550 C. Small amounts of maghemite and hematite were identified together with prevailing magnetite phase after treatments at different temperatures. The mean grain size of magnetite phase increases with temperature from 12 nm at room temperature to 54 nm at 550 C. The thermal behavior of magnetite in multilayers in comparison with powder magnetite is discussed. These findings were published in peer-reviewed conference proceedings after presentation at an international materials conference.

  11. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    NASA Astrophysics Data System (ADS)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  12. Morphology and structural studies of WO3 films deposited on SrTiO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-12-01

    WO3 films have been grown by pulsed laser deposition on SrTiO3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  13. Biocompatible and bioactive nanostructured glass coatings synthesized by pulsed laser deposition: In vitro biological tests

    NASA Astrophysics Data System (ADS)

    Popescu, A. C.; Sima, F.; Duta, L.; Popescu, C.; Mihailescu, I. N.; Capitanu, D.; Mustata, R.; Sima, L. E.; Petrescu, S. M.; Janackovic, D.

    2009-03-01

    We report on the synthesis by pulsed laser deposition with a KrF* excimer laser source ( λ = 248 nm, τ = 25 ns) of bioglass thin films of 6P57 and 6P61 types. Physiology, viability, and proliferation of human osteoblast cells were determined by quantitative in vitro tests performed by flow cytometry on primary osteoblasts cultured on pulsed laser deposited bioglasses. Both types of glass films proved to be appropriate mediums for cell survival and proliferation. In a parallel investigation, cell morphology and adhesion to the surface was studied by fluorescence microscopy and scanning electron microscopy. Strong bonds between the materials and cells were found in both cases, as osteoblast pseudopodes penetrated deep into the material. According to our observations, the 6P57 glass films were superior with respect to viability and proliferation performances.

  14. Preparation and characterization of pulsed laser deposition (PLD) SiC films

    NASA Astrophysics Data System (ADS)

    Tang, Y. H.; Sham, T.-K.; Yang, D.; Xue, L.

    2006-03-01

    Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ˜5 J/cm 2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.

  15. Effects of the substrate temperature on the bioglass films deposited by pulsed laser

    NASA Astrophysics Data System (ADS)

    Zhao, Yafan; Song, Mingda; Chen, Chuanzhong; Liu, Jian

    2008-08-01

    Effects of the substrate temperature on the bonding configuration and adhesion strength of the bioglass films deposited by pulsed laser were investigated by Fourier transform infrared spectroscopy (FTIR) and scratch apparatus. Morphology of the films is compact with the particles on the surface of them and the structure is amorphous glass. Bonding configuration is different from that of the target. Si-O-NBO/Si-O-Si (s) intensity ratios of the films decline as compared with the target. Besides, this tendency is obvious as the substrate temperature decreases. This effect is attributed to the network rearrangement during the film growth, which is associated to special structure of glass and complex physical mechanisms of pulsed laser deposition (PLD). Scratch test results show that the film deposited at 200 °C has the highest adhesion strength.

  16. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  17. Plasma instabilities in magnetically assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haverkamp, J. D.; Bourham, M. A.; Du, S.; Narayan, J.

    2008-06-01

    The laser ablation of a carbon target in a transverse magnetic field is studied using a quadruple Langmuir probe. Ion saturation signals indicate the presence of wavelike behaviour not found in field-free laser ablation of carbon. Results are discussed in terms of the lower-hybrid drift instability and the electron-ion hybrid instability. The results are found to be most consistent with the electron-ion hybrid instability.

  18. Pulsed laser deposition of adherent hexagonal/cubic boron nitride layer systems at high growth rates

    NASA Astrophysics Data System (ADS)

    Weißmantel, Steffen; Reiße, Günter

    2002-09-01

    Cubic boron nitride (c-BN) films were prepared by ion-beam-assisted pulsed laser deposition (IAPLD) using a KrF excimer laser for ablation. The c-BN growth rates of 50 nm/min at relatively low substrate temperatures of 250 °C were achieved by using high laser energy densities of more than 30 J/cm 2 and at ion beam energies of 600-700 eV. Main advantage of IAPLD for the deposition of c-BN films is that at high laser energy densities the ratio of ions from the ion beam to ablated atoms and ions necessary for cubic film growth can be reduced to 0.14, since the ablated boron and nitrogen species themselves have high mean kinetic energies of 130-180 eV. By using pulsed laser deposited h-BN intermediate layers, 300-420 nm thick well-adherent c-BN films can be prepared on Si and WC hard metal substrates. The maximum c-BN film thickness of some 0.5 μm is limited by the accumulation of particulates, formed during the ablation process, in the films. The microstructure, stress, hardness and adhesion of such layer systems deposited at high growth rates are presented.

  19. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  20. Tunable Stoichiometry of BCxNy Thin Films Through Multitarget Pulsed Laser Deposition Monitored via In Situ Ellipsometry (Postprint)

    DTIC Science & Technology

    2014-02-05

    this paper is that by synchronizing a pulsed laser with two different pulsed laser deposition (PLD) target materials and a programmable galvanometer ...Cambridge Technology galvanometer system (two axes servo mirror system with capacitive coupled position feedback for high speed) to a uniform elliptical... galvanometer : PLD A–carbon and PLD B–BN. Jones et al.: Tunable stoichiometry of BCxNy thin films through multitarget pulsed laser. . . Journal of

  1. Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

    NASA Astrophysics Data System (ADS)

    Schraknepper, H.; Bäumer, C.; Gunkel, F.; Dittmann, R.; De Souza, R. A.

    2016-12-01

    SrRuO3 thin-films were deposited with different pulse repetition rates, fdep, epitaxially on vicinal SrTiO3 substrates by means of pulsed laser deposition. The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature) consistently reveals that an increase in laser repetition rate results in an increase in ruthenium deficiency in the films. By the same token, it is shown that when using low repetition rates, approaching a nearly stoichiometric cation ratio in SrRuO3 becomes feasible. Based on these results, we propose a mechanism to explain the widely observed Ru deficiency of SrRuO3 thin-films. Our findings demand these theoretical considerations to be based on kinetic rather than widely employed thermodynamic arguments.

  2. Tunable stoichiometry of SiOx-BaTiOy-BOz fabricated by multitarget pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Jones, John G.; Goldstein, Jonathan T.; Smith, Steven R.; Landis, Gerald R.; Grazulis, Lawrence; Sun, Lirong; Murphy, Neil R.; Kozlowski, Gregory; Jakubiak, Rachel; Stutz, Charles E.

    2015-01-01

    Oxide materials of desired stoichiometry are challenging to make in small quantities. Nanostructured thin films of multiple oxide materials were obtained by using pulsed laser deposition and multiple independent targets consisting of Si, BaTiO3, and B. Programmable stoichiometry of nanostructured thin films was achieved by synchronizing a 248-nm krypton fluoride excimer laser at an energy of 300 mJ/pulse, a galvanometer mirror system, and the three independent target materials with a background pressure of oxygen. Island growth occurred on a per pulse basis; some 500 pulses are required to deposit 1 nm of material. The number of pulses on each target was programmed with a high degree of precision. Trends in material properties were systematically identified by varying the stoichiometry of multiple nanostructured thin films and comparing the resulting properties measured using in situ spectroscopic ellipsometry, capacitance measurements including relative permittivity and loss, and energy dispersive spectroscopy (EDS). Films were deposited ˜150 to 907 nm thickness, and in situ ellipsometry data were modeled to calculate thickness n and k. A representative atomic force microscopy measurement was also collected. EDS, ellipsometry, and capacitance measurements were all performed on each of the samples, with one sample having a calculated permittivity greater than 20,000 at 1 kHz.

  3. Photoemission Studies of Metallic Photocathodes Prepared by Pulsed Laser Ablation Deposition Technique

    SciTech Connect

    Fasano, V.; Lorusso, A.; Perrone, A.; De Rosa, H.; Cultrera, L.

    2010-11-10

    We present the results of our investigation on metallic films as suitable photocathodes for the production of intense electron beams in RF photoinjector guns. Pulsed laser ablation deposition technique was used for growing Mg and Y thin films onto Si and Cu substrates in high vacuum and at room temperature.Different diagnostic methods were used to characterize the thin films deposited on Si with the aim to optimize the deposition process. Photoelectron performances were investigated on samples deposited on Cu substrate in an ultra high vacuum photodiode chamber at 10{sup -7} Pa. Relatively high quantum efficiencies have been obtained for the deposited films, comparable to those of corresponding bulks. Samples could stay for several months in humid open air before being tested in a photodiode cell. The deposition process and the role of the photocathode surface contamination and its influence on the photoelectron performances are presented and discussed.

  4. Thin-film preparation by back-surface irradiation pulsed laser deposition using metal powder targets

    NASA Astrophysics Data System (ADS)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Yamauchi, Makiko; Suda, Yoshiaki

    2017-01-01

    Several kinds of functional thin films were deposited using a new thin-film preparation method named the back-surface irradiation pulsed laser deposition (BIPLD) method. In this BIPLD method, powder targets were used as the film source placed on a transparent target holder, and then a visible-wavelength pulsed laser was irradiated from the holder side to the substrate. Using this new method, titanium oxide and boron nitride thin films were deposited on the silicon substrate. Surface scanning electron microscopy (SEM) images suggest that all of the thin films were deposited on the substrate with some large droplets irrespective of the kind of target used. The deposition rate of the films prepared by using this method was calculated from film thickness and deposition time to be much lower than that of the films prepared by conventional PLD. X-ray diffraction (XRD) measurement results suggest that rutile and anatase TiO2 crystal peaks were formed for the films prepared using the TiO2 rutile powder target. Crystal peaks of hexagonal boron nitride were observed for the films prepared using the boron nitride powder target. The crystallinity of the prepared films was changed by annealing after deposition.

  5. Biocompatible nanocrystalline octacalcium phosphate thin films obtained by pulsed laser deposition.

    PubMed

    Socol, G; Torricelli, P; Bracci, B; Iliescu, M; Miroiu, F; Bigi, A; Werckmann, J; Mihailescu, I N

    2004-06-01

    We extended for the first time pulsed laser ablation to the deposition of octacalcium phosphate Ca8H2(PO4)6.5H2O (OCP) thin films. The depositions were performed with a pulsed UV laser source (lambda=248 nm, tau> or =20 ns) in a flux of hot water vapors. The targets were sintered from crystalline OCP powder and the laser ablation fluence was set at values of 1.5-2 J/cm2. During depositions the collectors, Si or Ti substrates, were maintained at a constant temperature within the range 20-200 degrees C. The resulting structures were submitted to heat treatment in hot water vapors for up to 6 h. The best results were obtained at a substrate temperature of 150 degrees C during both deposition and post-deposition treatment. High-resolution electron microscopy and XRD at grazing incidence indicated that the coatings obtained were made of nanocrystalline OCP. Cross-section TEM investigations showed that the coatings contained droplets stacked on Ti substrates as well as distributed across the entire thickness of the arborescence-like structure layers. The results of WST-1 assay, cell adherence, DNA replication, and caspase-1 activity confirmed the good biocompatibility of the coatings.

  6. Characterization of Environmental Stability of Pulsed Laser Deposited Oxide Ceramic Coatings

    SciTech Connect

    ADAMS, THADM

    2004-03-02

    A systematic investigation of candidate hydrogen permeation materials applied to a substrate using Pulsed Laser Deposition has been performed. The investigation focused on application of leading permeation-resistant materials types (oxide, carbides, and metals) on a stainless steel substrate. and evaluation of the stability of the applied coatings. Type 304L stainless steel substrates were coated with aluminum oxide, chromium oxide, and aluminum. Characterization of the coating-substrate system adhesion was performed using scratch adhesion testing and microindentation. Coating stability and environmental susceptibility were evaluated for two conditions-air at 350 degrees Celsius and Ar-H2 at 350 degrees Celsius for up to 100 hours. Results from this study have shown the pulsed laser deposition process to be an extremely versatile technology that is capable of producing a sound coating/substrate system for a wide variety of coating materials.

  7. Plasma plume dynamics in magnetically assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haverkamp, J. D.; Bourham, M. A.; Du, S.; Narayan, J.

    2009-01-01

    The expansion of a laser produced plasma perpendicular to a magnetic field is studied with a quadruple Langmuir probe and a B-dot probe. In regions where the kinetic beta is less than one, we find plume deceleration and weak displacement of the magnetic field. As the plume expands into regions of weak magnetic field, plume deceleration stops and the displacement of the magnetic field is large. The diffusion time of the magnetic field lines was consistent with anomalously large resistivity driven by the presence of an instability. Electron temperatures are larger than in the field-free case due to Ohmic heating mediated by the anomalously large resistivity.

  8. Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

    NASA Astrophysics Data System (ADS)

    Rau, Kaustubh R.

    Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

  9. Pulsed laser deposition and in vitro characteristics of triphasic - HASi composition on titanium.

    PubMed

    Palangadan, Rajesh; Sukumaran, Anil; Fernandez, Francis B; John, Annie; Varma, Harikrishna

    2014-02-01

    Pulsed laser deposition was used to deposit bioactive triphasic glass-ceramic composition (HASi) over titanium substrate using dense HASi target. Bioactive glass compositions are considered the most useful synthetic materials for immediate bone attachment because of its bioresorption, osteoconduction and osteointegration characteristics under in vivo conditions. The disadvantage of its brittleness associated with bioactive glass-ceramics has prompted its coating over metallic implants for the combination of duo mechanical and bioactive properties. The hard HASi target was able to undergo laser ablation under ambient gas pressure without bulk erosion of the target. Laser deposition was found to be efficient in depositing triphasic composition for immediate bone integration. The target and deposits were analyzed for the phase, composition and microstructural characteristics by means of X-ray diffraction, Fourier transform infrared spectroscopy, energy-dispersive X-ray analysis and scanning electron microscopy. Simultaneously, the adherent nature and mechanical behaviour of deposits were confirmed by scratch test and micro-indentation methods. Further, the in vitro dissolution and bioactivity were assessed by soaking in simulated body fluid followed by elemental analysis using inductively coupled plasma spectroscopy. The deposits were found to be cell-friendly, which was indicated by the phenomenology of stem cells under in vitro conditions.

  10. Incorporation of gold into silicon by thin film deposition and pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.; Hudspeth, Quentin; Malladi, Girish; Efstathiadis, Harry; Mathews, Jay

    2016-12-01

    We report on the incorporation of gold into silicon at a peak concentration of 1.9 × 1020 at./cm3, four orders of magnitude above the equilibrium solubility limit, using pulsed laser melting of a thin film deposited on the silicon surface. We vary the film thickness and laser process parameters (fluence, number of shots) to quantify the range of concentrations that can be achieved. Our approach achieves gold concentrations comparable to those achieved with ion implantation followed by pulsed laser melting, in a layer with high crystalline quality. This approach offers an attractive alternative to ion implantation for forming high quality, high concentration layers of transition metals like gold in silicon.

  11. Method for continuous control of composition and doping of pulsed laser deposited films

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1995-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  12. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1996-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  13. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  14. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    NASA Astrophysics Data System (ADS)

    Perrone, A.; Gontad, F.; Lorusso, A.; Di Giulio, M.; Broitman, E.; Ferrario, M.

    2013-11-01

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ-2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10-5) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed.

  15. Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

    SciTech Connect

    Masina, B. N. E-mail: slafane@cdta.dz; Lafane, S. E-mail: slafane@cdta.dz; Abdelli-Messaci, S.; Kerdja, T.; Wu, L.; Akande, A. A.; Mwakikunga, B.

    2015-10-28

    Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

  16. Matrix assisted pulsed laser deposition of light emitting polymer thin films

    NASA Astrophysics Data System (ADS)

    Fitz-Gerald, J. M.; Jennings, G.; Johnson, R.; Fraser, C. L.

    2005-02-01

    Matrix assisted laser processing allows for the deposition of functional and fragile materials with a minimum of breakdown and decomposition. In this communication we report on light emitting thin films of ruthenium tris(bipyridine)-centered star-shaped poly(methyl methacrylate), Ru(bpyPMMA2)3(PF6)2, grown by matrix assisted pulsed laser deposition. A pulsed excimer laser (KrF) operating at 248 nm was used for all experiments. Due to the absorption at 248 nm and the solubility characteristics of [Ru(bpyPMMA2)3](PF6)2, dimethoxy-ethane (DME) was used as a solvent [1]. Dilute solutions (2 wt. %) of [Ru(bpyPMMA2)3](PF6)2 and DME were flash frozen in liquid nitrogen producing a solid target. Thin films ranging from 20 to 100 nm were grown on Si in an Ar atmosphere at 200 mTorr at a laser fluence of 0.04 J/cm2. The deposited materials were characterized by proton nuclear magnetic resonance (1H NMR) and gel permeation chromatography (GPC) equipped with refractive index (RI), and ultraviolet/visible (UV/vis) detection.

  17. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  18. Nanostructured and amorphous-like tungsten films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dellasega, D.; Merlo, G.; Conti, C.; Bottani, C. E.; Passoni, M.

    2012-10-01

    An experimental investigation of nanostructured, micrometer-thick, tungsten films deposited by pulsed laser deposition is presented. The films are compact and pore-free, with crystal grain sizes ranging from 14 nm to less than 2 nm. It is shown how, by properly tailoring deposition rate and kinetic energy of ablated species, it is possible to achieve a detailed and separate control of both film morphology and structure. The role of the main process parameters, He background pressure, laser fluence, and energy, is elucidated. In contrast with W films produced with other PVD techniques, β-phase growth is avoided and the presence of impurities and contaminants, like oxygen, is not correlated with film structure. These features make these films interesting for the development of coatings with improved properties, like increased corrosion resistance and enhanced diffusion barriers.

  19. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGES

    Craciun, D.; Socol, G.; Lambers, E.; ...

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  20. Preparation and characterization of YBCO coating on metallic RABiT substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gonal, M. R.; Prajapat, C. L.; Igalwar, P. S.; Maji, B. C.; Singh, M. R.; Krishnan, M.

    2016-05-01

    Superconducting YBCO films are coated on metallic Rolling Assisted Bi-axially Textured Substrates (RABiTS) Ni-5wt % W (NiW) (002) substrate using pulsed laser deposition (PLD) system. Targets of YBa2Cu3O7-δ (YBCO) and buffer layers of Ceria and 8 mole % Yttria Stabilized Zirconia (YSZ) of high density are synthesized. At each stage of deposition coatings are characterized by XRD. Transport studies show superconducting nature of YBCO only when two successive buffer layers of YSZ and CeO2 are used.

  1. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition.

  2. In-situ monitoring by reflective high energy electron diffraction during pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Blank, Dave H. A.; Rijnders, Guus J. H. M.; Koster, Gertjan; Rogalla, Horst

    1999-01-01

    Pulsed laser deposition (PLD) has developed during the past decade from a fast but limited preparation tool towards a competitive thin film deposition technique. One of the advantages above other techniques is the possibility of growth at relative high background pressure. There is a large freedom in choosing which kind of gas. Moreover, in a number of applications, the gaseous species in the background pressure are part of the elements to be grown, e.g., oxygen in the case of high Tc superconductors. However, the advantage of relative high pressures leads to restrictions of using standard diagnostics and monitoring of the film growth, e.g., reflective high energy electron diffraction (RHEED). Here, a PLD chamber including an in-situ RHEED system is presented, which makes it possible to monitor and study the growth at standard PLD parameters. Using a two-stages differential pumped, magnetically shielded, extension tube mounted at the electron gun side and a special designed phosphor screen including CCD camera, real time monitoring by observation of RHEED oscillations could be established at pressures up to 50 Pa. In this paper the latest results on applying this technique on SrTiO 3 and YBa 2Cu 3O 7 will be presented. Additional to the usual diagnostics performed with RHEED, another phenomena can be observed. The pulsed way of deposition, characteristic for PLD, leads to relaxations in the intensity of the diffracted pattern due to the mobility of the deposited material. These relaxation times give extra information about relaxation, crystallization, and nucleation of the deposited material. The presented technique leads to a better understanding of the growth during pulsed laser deposition and, because of the possibility to monitor the growth, will make PLD competitive with other deposition techniques.

  3. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  4. Random lasing of ZnO thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Cachoncinlle, C.; Hebert, C.; Perrière, J.; Nistor, M.; Petit, A.; Millon, E.

    2015-05-01

    Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10-2 oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm-2, a value lower than those classically reported for pulsed-laser deposition thin films.

  5. Substrate dependent structural and magnetic properties of pulsed laser deposited Fe3O4 thin films.

    PubMed

    Goyal, Rajendra N; Kaur, Davinder; Pandey, Ashish K

    2010-12-01

    Nanocrystalline iron oxide thin films have been deposited on various substrates such as quartz, MgO(100), and Si(100) by pulsed laser deposition technique using excimer KrF laser (248 nm). The orientations, crystallite size and lattice parameters were studied using X-ray diffraction. The XRD results show that the films deposited on MgO and Si substrates are highly oriented and show only (400) and (311) reflections respectively. On the other hand, the orientation of the films deposited on quarts substrate changed from (311) to (400) with an increase in the substrate temperature from 400 degrees C to 600 degrees C, indicating thereby that the film growth direction is highly affected with nature of substrate and substrate temperature. The surface morphology of the deposited films was studied using Atomic Force Microscopy (AFM) and spherical ball like regular features of nanometer size grains were obtained. The magnetic properties were studied by Superconducting Quantum Interference Device (SQUID) magnetometer in the magnetic field +/- 6 Tesla. The magnetic field dependent magnetization (M-H) curves of all the Fe3O4 thin films measured at 5 K and 300 K show the ferrimagnetic nature. The electrochemical sensing of dopamine studied for these films shows that the film deposited on MgO substrate can be used as a sensing electrode.

  6. Negative ions: The overlooked species in thin film growth by pulsed laser deposition

    SciTech Connect

    Esposito, M.; Bator, M.; Lippert, T.; Schneider, C. W.; Wokaun, A.; Doebeli, M.

    2011-11-07

    Plasma plume species from a ceramic La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target were studied by plasma mass spectrometry as a function of laser fluence, background gas, and deposition pressure to understand the interplay between plasma composition and oxide thin film growth by pulsed laser deposition. The plume composition reveals a significant contribution of up to 24% of negative ions, most notably using a N{sub 2}O background. The significance of negative ions for thin film growth is shown for La{sub 0.4}Ca{sub 0.6}MnO{sub 3} films grown in different background conditions where the best structural properties coincide with the largest amount of negative plasma species.

  7. Nanostructured bioglass thin films synthesized by pulsed laser deposition: CSLM, FTIR investigations and in vitro biotests

    NASA Astrophysics Data System (ADS)

    Floroian, L.; Savu, B.; Stanciu, G.; Popescu, A. C.; Sima, F.; Mihailescu, I. N.; Mustata, R.; Sima, L. E.; Petrescu, S. M.; Tanaskovic, D.; Janackovic, Dj.

    2008-12-01

    We report the synthesis by pulsed laser deposition of thin structures of two bioactive glasses belonging to the SiO 2-Na 2O-K 2O-CaO-MgO-P 2O 5 system, on medical grade Ti substrates. We evaluated their biocompatibility after immersion in simulated body fluids and by performing cells adhesion tests. The films were characterized by confocal scanning laser microscopy and Fourier transform infrared spectrometry, before and after 30 and 46 days immersion in fluids. Our studies demonstrated that deposited coatings were degraded in simulated fluids. A new apatite layer was synthesized by ions changing with the fluid during the decomposition of bioglasses. We investigated after immersion in fluids cells adhesion and the cytoskelet organization of synthesized structures, by fluorescence microscopy. A good adhesion to bioglass coatings was evidenced.

  8. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rebollar, Esther; Martínez-Tong, Daniel E.; Sanz, Mikel; Oujja, Mohamed; Marco, José F.; Ezquerra, Tiberio A.; Castillejo, Marta

    2016-11-01

    We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I-V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm2 resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm2, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  9. Synthesis of functionally graded bioactive glass-apatite multistructures on Ti substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tanaskovic, D.; Jokic, B.; Socol, G.; Popescu, A.; Mihailescu, I. N.; Petrovic, R.; Janackovic, Dj.

    2007-12-01

    Functionally graded glass-apatite multistructures were synthesized by pulsed laser deposition on Ti substrates. We used sintered targets of hydroxyapatite Ca 10(PO 4) 6(OH) 2, or bioglasses in the system SiO 2-Na 2O-K 2O-CaO-MgO-P 2O 5 with SiO 2 content of either 57 wt.% (6P57) or 61 wt.% (6P61). A UV KrF* ( λ = 248 nm, τ > 7 ns) excimer laser source was used for the multipulse laser ablation of the targets. The hydroxyapatite thin films were obtained in H 2O vapors, while the bioglass layers were deposited in O 2. Thin films of 6P61 were deposited in direct contact with Ti, because Ti and this glass have similar thermal expansion behaviors, which ensure good bioglass adhesion to the substrate. This glass, however, is not bioactive, so yet more depositions of 6P57 bioglass and/or hydroxyapatite thin films were performed. All structures with hydroxyapatite overcoating were post-treated in a flux of water vapors. The obtained multistructures were characterized by various techniques. X-ray investigations of the coatings found small amounts of crystalline hydroxyapatite in the outer layers. The scanning electron microscopy analyses revealed homogeneous coatings with good adhesion to the Ti substrate. Our studies showed that the multistructures we had obtained were compatible with further use in biomimetic metallic implants with glass-apatite coating applications.

  10. Engineering of pulsed laser deposited calcium phosphate biomaterials in controlled atmospheres

    NASA Astrophysics Data System (ADS)

    Drukteinis, Saulius E.

    Synthetic calcium phosphates (CAP) such as hydroxyapatite (HA) have been used as regenerative bone graft materials and also as thin films to improve the integration of biomedical implant devices within skeletal tissue. Pulsed laser deposition (PLD) can deposit crystalline HA with significant adhesion on titanium biomaterials. However, there are PLD processing constraints due to the complex physical and chemical interactions occurring simultaneously during PLD, which influence ablation plume formation and development. In this investigation PLD CAP films were engineered with a focus on novel decoupling of partial pressure of H2O (g) ( PH2O ) from total background pressure, in combination with substrate heat treatment and laser energy density control. Characterization of these films was performed with X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, and Optical Profilometry. In vitro cellular adhesion testing was also performed using osteoblast (MC3T3) cell lines to evaluate adhesion of bone-forming cells on processed PLD CAP samples. Preferred a-axis orientation films were deposited in H2O (g) saturated atmospheres with reduced laser fluence (< 4 J/cm2). Crystalline HA/tetracalcium phosphate (TTCP) films were deposited in H2O ( g)-deficient atmospheres with higher laser fluence (> 3 J/cm 2). Varied PH2O resulted in control of biphasic HA/TTCP composition with increasing TTCP at lower PH2O . These were dense continuous films composed of micron-scale particles. Cellular adhesion assays did not demonstrate a significant difference between osteoblast adhesion density on HA films compared with biphasic HA/TTCP films. Room temperature PLD at varied PH2O combined with furnace heat treatment resulted in controlled variation in surface amplitude parameters including surface roughness (S a), root mean square (Sq), peak to valley height (St), and ten-point height ( Sz). These discontinuous films were

  11. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    DTIC Science & Technology

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  12. Pulsed laser deposition of tungsten carbide thin films on silicon (100) substrate

    NASA Astrophysics Data System (ADS)

    Suda, Y.; Nakazono, T.; Ebihara, K.; Baba, K.

    1997-01-01

    A method of synthesizing tungsten carbide (WC) thin films by a pulsed YAG laser deposition is investigated. WC thin films are deposited on silicon (100) substrates by using WC5%Co alloy targets. Glancing angle X-ray diffraction shows that the strong peaks of W 2C appear at the substrate temperature of 500°C. Beside the strong peaks of W 2C, weak peaks of WC and W 3Co 3C appear at the substrate temperature of 650°C. Auger electron spectroscopy shows that the almost stoichiometric WC films are deposited at the methane gas pressure of 1.0 Pa. Morphological features of the samples have been obtained by employing the technique of scanning electron microscopy. X-ray photoelectron spectroscopy has been used to obtain structural and compositional information about the samples.

  13. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  14. Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

    SciTech Connect

    Wang Yunfei; Chen Xuekang; Li Zhonghua; Zheng Kuohai; Wang Lanxi; Feng Zhanzu; Yang Shengsheng

    2009-01-05

    High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

  15. Physical properties of a non-transparent cadmium oxide thick film deposited at low fluence by pulsed laser deposition

    SciTech Connect

    Quiñones-Galván, J.G.; Lozada-Morales, R.; Jiménez-Sandoval, S.; Camps, Enrique; and others

    2016-04-15

    Highlights: • A non-transparent cadmium oxide film has been deposited by pulsed laser deposition. • The CdO film is polycrystalline and highly oriented in the (2 0 0) direction. • Thermal treatment was applied in order to see the effect on its physical properties. - Abstract: A stable non-transparent CdO film was grown by pulsed laser deposition. The sample was thermally annealed at 500 °C in air. A (2 0 0) highly oriented polycrystalline film was obtained. The annealed sample has not preferred orientation. Scanning electron micrographs show a grain size reduction for the annealed sample. By Raman spectroscopy, the defects related second order vibrational modes of CdO were observed. Chemical composition analysis shows the presence of CdO together with a substoichiometric CdO{sub x} phase for the as-grown sample. For the annealed sample a compensation of oxygen vacancies was observed. Electrical resistivity measurements give a value of 8.602 × 10{sup −4} (Ω cm) for the as-grown film. For the annealed sample the electrical resistivity increased to a value of 9.996 × 10{sup −3} (Ω cm). Zero transmission has never been reported for CdO films. The photoluminescence spectra were measured in order to shed some light on the origin of the zero transmission.

  16. Epitaxial growth of metal fluoride thin films by pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Budal, J.D.; Chakoumakos, B.C.; Geohegan, D.B.; Puretzky, A.

    1995-12-01

    We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.

  17. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    NASA Astrophysics Data System (ADS)

    Krämer, André; Engel, Sebastian; Sangiorgi, Nicola; Sanson, Alessandra; Bartolomé, Jose F.; Gräf, Stephan; Müller, Frank A.

    2017-03-01

    Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I-V measurements were performed.

  18. Characterization of nanosecond, femtosecond and dual pulse laser energy deposition in air for flow control and diagnostic applications

    NASA Astrophysics Data System (ADS)

    Limbach, Christopher M.

    The non-resonant heating of gases by laser irradiation and plasma formation has been under investigation since the development of 100 megawatt peak power, Q-switched, nanosecond pulse duration lasers and the commensurate discovery of laser air sparks. More recently, advances in mode-locking and chirped pulse amplification have led to commercially available 100 gigawatt peak power, femtosecond pulse duration lasers with a rapidly increasing number of applications including remote sensing, laser spectroscopy, aerodynamic flow control, and molecular tagging velocimetry and thermometry diagnostics. This work investigates local energy deposition and gas heating produced by focused, non-resonant, nanosecond and femtosecond laser pulses in the context of flow control and laser diagnostic applications. Three types of pulse configurations were examined: single nanosecond pulses, single femtosecond pulses and a dual pulse approach whereby a femtosecond pre-ionizing pulse is followed by a nanosecond pulse. For each pulse configuration, optical and laser diagnostic techniques were applied in order to qualitatively and quantitatively measure the plasmadynamic and hydrodynamic processes accompanying laser energy deposition. Time resolved imaging of optical emission from the plasma and excited species was used to qualitatively examine the morphology and decay of the excited gas. Additionally, Thomson scattering and Rayleigh scattering diagnostics were applied towards measurements of electron temperature, electron density, gas temperature and gas density. Gas heating by nanosecond and dual pulse laser plasmas was found to be considerably more intense than femtosecond plasmas, irrespective of pressure, while the dual pulse approach provided substantially more controllability than nanosecond pulses alone. In comparison, measurements of femtosecond laser heating showed a strong and nonlinearly dependence on focusing strength. With comparable pulse energy, measurements of maximum

  19. InGaZnO semiconductor thin film fabricated using pulsed laser deposition.

    PubMed

    Chen, Jiangbo; Wang, Li; Su, Xueqiong; Kong, Le; Liu, Guoqing; Zhang, Xinping

    2010-01-18

    The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

  20. Growth of epitaxial bismuth and gallium substituted lutetium iron garnet films by pulsed laser deposition

    SciTech Connect

    Leitenmeier, Stephan; Heinrich, Andreas; Lindner, Joerg K. N.; Stritzker, Bernd

    2006-04-15

    Epitaxial bismuth and gallium substituted lutetium iron garnet thin films have been grown on (100) oriented gadolinium gallium garnet Gd{sub 3}Ga{sub 5}O{sub 12} substrates by pulsed laser deposition. The films have been studied using x-ray diffraction, high resolution x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and electron diffraction. We obtained smooth films with thicknesses between 0.3 and 1.0 {mu}m showing good crystalline quality and epitaxial growth.

  1. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G. I.; Giapintzakis, J.

    2013-08-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10-3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

  2. Magnetism of pure, disordered carbon films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Höhne, R.; Han, K.-H.; Esquinazi, P.; Setzer, A.; Semmelhack, H.; Spemann, D.; Butz, T.

    2004-05-01

    We have studied the magnetization of disordered, pure carbon films in order to search for signs of para-, ferro-or antiferromagnetism. Carbon films on silicon substrates were produced by pulsed laser deposition in high vacuum and at room temperature using pressed ultra-clean graphite powder as target. The magnetization shows a Curie-Weiss behaviour added to a temperature-independent term. Annealing the films at 1000°C and in high-vacuum eliminates completely the Curie-Weiss contribution. We compare our results with those recently obtained in activated carbon fibers.

  3. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    NASA Astrophysics Data System (ADS)

    Sposito, A.; Gregory, S. A.; de Groot, P. A. J.; Eason, R. W.

    2014-02-01

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi2O3 or a CeO2 target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO2 phase.

  4. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    SciTech Connect

    Sposito, A. Eason, R. W.; Gregory, S. A.; Groot, P. A. J. de

    2014-02-07

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi{sub 2}O{sub 3} or a CeO{sub 2} target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO{sub 2} phase.

  5. Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

    SciTech Connect

    Shin, Byungha; Aziz, Michael J.

    2007-08-15

    We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown.

  6. Post-Deposition Induced Conductivity in Pulsed Laser Irradiated Metal Doped Zinc Oxide Films

    SciTech Connect

    Wang, Lisa J; Exarhos, Gregory J

    2009-12-03

    The optical and electrical properties of doped solution-deposited and rf sputter-deposited thin metal oxide films were investigated following post deposition pulsed laser irradiation. Solution deposited films were annealed at 450 ºC. Following the heating regiment, the transparent metal oxide films were subjected to 355 nm pulsed Nd:YAG laser irradiation (4 nsec pulsewidth) at fluences between 5 and 150 mJ/cm2. Irradiation times at pulse frequencies of 30 Hz ranged from seconds to tens of minutes. Film densification, index change and a marked increase in conductivity were observed following irradiation in air and under vacuum of Al:ZnO (AZO), Ga:ZnO (GZO), and In:ZnO (IZO) films deposited on silica substrates. Despite the measured increase in conductivity, all films continued to show high transparency on the order of 90% at wavelengths from the band edge well into the near infrared region of the spectrum. Laser energies required for turning on the conductivity of these films varied depending upon the dopant. Irradiations in air yielded resistivity measurements on the order of 16.cm. Resistivities of films irradiated under vacuum were on the order of 0.1.cm. The increase in conductivity can be attributed to the formation of oxygen vacancies and subsequent promotion of free carriers into the conduction band. All irradiated films become insulating after around 24 hours. Oxygen atoms in air become reduced by electrons in the metal conduction band and diffuse into the vacancies in the lattice. The rate of this reduction process depends on the type of dopant. This work also sheds light on the damage threshold, correlating the optical properties with the presence of free carriers that have been introduced into the conduction band. All films were characterized by means of UV-VIS-NIR transmission spectroscopy, visible and UV Raman spectroscopy and Hall measurements. Analysis of interference fringes in measured transmission spectra allowed film density and refractive index

  7. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributedmore » to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  8. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.

  9. Sequential pulsed laser deposition of homoepitaxial SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Groenendijk, D. J.; Gariglio, S.

    2016-12-01

    The control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition, offsetting the importance of growth conditions on the film stoichiometry. In this work, we demonstrate that the cation stoichiometry of SrTiO3 thin films can be finely tuned by sequential deposition from SrO and TiO2 targets. Homoepitaxial SrTiO3 films were deposited at different substrate temperatures and Ti/Sr pulse ratios, allowing the establishment of a growth window for stoichiometric SrTiO3. The growth kinetics and nucleation processes were studied by reflection high-energy electron diffraction and atomic force microscopy, providing information about the growth mode and the degree of off-stoichiometry. At the optimal (stoichiometric) growth conditions, films exhibit atomically flat surfaces, whereas off-stoichiometry is accommodated by crystal defects, 3D islands, and/or surface precipitates depending on the substrate temperature and the excess cation. This technique opens the way to precisely control stoichiometry and doping of oxide thin films.

  10. Effect of deposition time on structural and magnetic properties of pulse laser deposited hard-soft composite films

    NASA Astrophysics Data System (ADS)

    Satalkar, M.; Kane, S. N.; Pasko, A.; LoBue, M.; Mazaleyrat, F.

    2016-10-01

    Hard-soft composite (BaFe12O19:Mg0.1Ni0.3Zn0.6Fe2O4 (2:1) films, were deposited by ‘Pulsed Laser Deposition’ (PLD) technique on Si (100) substrate using different deposition time - 30, 60, 90 and 120 minutes. Influence of deposition time on structural and magnetic properties were studied via X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). XRD confirms the presence of soft and hard phases in all the prepared thin films. Small amount of secondary phase - Fe2O3 is also detected in all the thin films except for the deposition time - 90 mins. With deposition time average grain diameter of both hard (BaFe12O19) and soft (Mg0.1Ni0.3Zn0.6Fe2O4) phase increases. Increase in the distance between the magnetic ions (Ni2+ and Fe3+) at tetrahedral (A) and octahedral [B] site leads to increase in the hopping length at A and B site except for the the deposition time of 60 minutes. Magnetic measurements shows that the coercivity and magnetization of the prepared thin films respectively ranges between 112.07 - 213.03 Oe and 1.4 x 10-7 - 3.15 x 10-7 Am2.

  11. Yttria-Stabilized Zirconia Ceramic Deposition on SS430 Ferritic Steel Grown by PLD - Pulsed Laser Deposition Method

    NASA Astrophysics Data System (ADS)

    Khalid Rivai, Abu; Mardiyanto; Agusutrisno; Suharyadi, Edi

    2017-01-01

    Development of high temperature materials are one of the key issues for the deployment of advanced nuclear reactors due to higher temperature operation. One of the candidate materials for that purpose is ceramic-coated ferritic steel that one of the functions is to be a thermal barrier coating (TBC). Thin films of YSZ (Ytrria-Stabilized Zirconia) ceramic have been deposited on a SS430 ferritic steel using Pulsed Laser Deposition (PLD) at Center For Science and Technology of Advanced Materials laboratory – National Nuclear Energy Agency of Indonesia (BATAN). The thin film was deposited with the chamber pressure range of 200-225 mTorr, the substrate temperature of 800oC, and the number of laser shots of 3×104, 6×104 and 9×104. Afterward, the samples were analyzed using Scanning Electron Microscope – Energy Dispersive X-ray Spectroscope (SEM-EDS), X-Ray Diffractometer (XRD), Atomic Force Microscope (AFM) and Vickers hardness tester. The results showed that the YSZ could homogeneously and sticky deposited on the surface of the ferritic steel. The surfaces were very smoothly formed with the surface roughness was in the range of 70 nm. Furthermore, thickness, composition of Zr4+ dan Y3+, the crystallinity, and hardness property was increased with the increasing the number of the shots.

  12. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E.

    1995-01-01

    A peculiarity of the pulsed laser deposition technique of thin-film growth which limits its applicability is the very rapid drop of resulting film thickness as a function of distance from the deposition axis. This is due to the narrow forward peaking of the emission plume characteristic of the laser ablation process. The plume is usually modeled by a cos(sup n) theta function with n greater, and in some cases, much higher, than 1. Based on this behavior, a method is presented to substantially enhance coverage uniformity in substrate zones of the order of the target-substrate distance h, and to within a specified thickness tolerance. Essentially, target irradiation is caused to form an annular emission source instead of the usual spot. By calculating the resulting thickness profiles, an optimum radius s is found for the annular source, corresponding to a given power in the emission characteristic and a given value of h. The radius of this annulus scales with h. Calculated numerical results for optimal s/h ratios corresponding to a wide range of values for n are provided for the case of +/- 1% tolerance in deviation from the thickness at deposition axis. Manners of producing annular illumination of the target by means of conic optics are presented for the case of a laser beam with radially symmetric profile. The region of uniform coverage at the substrate can be further augmented by extension of the method to multiple concentric annular sources. By using a conic optic of novel design, it is shown also how a single-laser beam can be focused onto a target in the required manner. Applicability of the method would be limited in practice by the available laser power. On the other hand, the effective emitting area can be large, which favors extremely high growth rates, and since growth can occur uniformly over the whole substrate for each laser pulse, single-shot depositions with substantial thicknesses are possible. In addition, the simultaneity of growth over the

  13. Nonthermal Laser Assisted Ge Quantum Dot Formation on Si(100)-2x1 by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali; Elsayed-Ali, Hani

    2009-11-01

    The effect of laser-induced electronic excitations on the self-assembly of Ge quantum dots (QDs) on Si(100)-2x1 grown by pulsed laser deposition is studied. The samples were cleaned by using modified Shiraki method and then transferred into the deposition chamber. The vacuum system was then pumped down, baked for at least 24 hours, and the sample was then flashed to 1200 C in order for the 2x1 reconstruction to form. The experiment was conducted under a pressure ˜1x10-10 Torr. A Q-switched Nd:YAG laser was used to ablate a Ge target. In-situ RHEED and STM and ex-situ AFM were used to study the morphology of the grown QD. The dependence of the QD morphology on substrate temperature and ablation and excitation laser energy density was studied. Electronic excitation is shown to affect the surface morphology. Laser irradiation of the Si substrate is shown to decrease the roughness of films grown at a substrate temperature of ˜400 ^oC. Electronic excitation also affected the surface coverage, cluster density, uniformity and decreased the temperature required to form 3-dimensional QDs to ˜250 C at which no crystalline film formation is possible without excitation laser. Possible mechanisms such as two hole localization following the phonon kick will be discussed.

  14. Nonthermal Laser Assisted Ge Quantum Dot Formation on Si(100)-2x1 by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali; Elsayed-Ali, Hani

    2009-11-01

    The effect of laser-induced electronic excitations on the self-assembly of Ge quantum dots (QDs) on Si(100)-2x1 grown by pulsed laser deposition is studied. The samples were first cleaned by using modified Shiraki method and then transferred into the deposition chamber. The vacuum system was then pumped down, baked for at least 24 hours, and the sample was then flashed to 1200 C in order for the 2x1 reconstruction to form. The experiment was conducted under a pressure ˜1x10-10 Torr. A Q-switched Nd:YAG laser was used to ablate a Ge target. In-situ RHEED and STM and ex-situ AFM were used to study the morphology of the grown QD. The dependence of the QD morphology on substrate temperature and ablation and excitation laser energy density was studied. Electronic excitation is shown to affect the surface morphology. Laser irradiation of the Si substrate is shown to decrease the roughness of films grown at a substrate temperature of ˜400 ^oC. Electronic excitation also affected the surface coverage, cluster density, uniformity and decreased the temperature required to form 3-dimensional QDs to ˜250 C at which no crystalline film formation is possible without excitation laser. Possible mechanisms such as two hole localization following the phonon kick will be discussed.

  15. Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

    NASA Astrophysics Data System (ADS)

    Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R. D.

    2013-01-01

    Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

  16. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  17. High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Caifeng; Li, Qingshan; Wang, Jisuo; Zhang, Lichun; Zhao, Fengzhou; Dong, Fangying

    2016-07-01

    ZnS/Au/ZnS tri-layer films were deposited on quartz glass substrates by pulsed laser deposition. The influence of Au layer thickness on optical and electrical properties of the tri-layer ZnS/Au/ZnS was studied. X-ray diffractometer (XRD) and scanning electron microscope were employed to characterize the crystalline structure and surface morphology of the tri-layer films. Hall measurements, ultraviolet and visible spectrophotometer, four-point probe were used to explore the optoelectronic properties of the ZnS/Au/ZnS. The increase of Au layer thickness resulted in the decreased resistivity, the increased carrier concentration, and the declined transmittance in the visible light region.

  18. Shape effect in FMR of Ni-Co-Mn-In layers obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dubiel, Łukasz; Kuzma, Marian; Stefaniuk, Ireneusz; Wisz, Grzegorz; Wal, Andrzej

    2016-12-01

    We have studied thin layers of Ni50-xCoxMn50-yIny alloys on (001) Si substrate obtained by pulsed laser deposition method (PLD) using YAG Nd3+ laser operating at second harmonic. The target was bulk Ni50-xCoxMn50-yIny (x = 5, y = 14.5) alloy prepared by induction melting of pure elements under argon atmosphere. Magnetic properties were investigated on Bruker X band EPR spectrometer (9.36 GHz) at room temperature. The magnetic resonance spectrum consists of non-symmetric lines with resonance field within wide field range (2500-4800 Gs) depending on the orientation of the static field in the plane perpendicular to the layer. Calculated spectroscopic splitting factor g = 2.09.

  19. Towards new binary compounds: Synthesis of amorphous phosphorus carbide by pulsed laser deposition

    SciTech Connect

    Hart, Judy N.; May, Paul W.; Allan, Neil L.; Hallam, Keith R.; Claeyssens, Frederik; Fuge, Gareth M.; Ruda, Michelle; Heard, Peter J.

    2013-02-15

    We have recently undertaken comprehensive computational studies predicting possible crystal structures of the as yet unknown phosphorus carbide as a function of composition. In this work, we report the synthesis of amorphous phosphorus-carbon films by pulsed laser deposition. The local bonding environments of carbon and phosphorus in the synthesised materials have been analysed by x-ray photoelectron spectroscopy; we have found strong evidence for the formation of direct P-C bonding and hence phosphorus carbide. There is a good agreement between the bonding environments found in this phosphorus carbide material and those predicted in the computational work. In particular, the local bonding environments are consistent with those found in the {beta}-InS-like structures that we predict to be low in energy for phosphorus:carbon ratios between 0.25 and 1. Highlights: Black-Right-Pointing-Pointer We have synthesised amorphous phosphorus-carbon films by pulsed laser deposition. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy results indicate formation of direct P-C bonds and hence phosphorus carbide. Black-Right-Pointing-Pointer Local bonding environments are consistent with those in predicted structures.

  20. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  1. Dysprosium-doped chalcogenide films prepared by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Nazabal, Virginie; Nemec, Petr; Jedelský, Jaroslav; Duverger, Claire; Le Person, Jenny; Adam, Jean-Luc; Frumar, Miloslav

    2004-08-01

    The chalcogenide glasses possess interesting optical properties such as a good transmission in the nIR-mIR wavelength region, high linear and non-linear refractive index and photosensitivity, which allows holographic patterns writing. Moreover, their low-phonon energy makes them good candidates for optical amplification. In order to design an integrated circuit on chalcogenide glasses, the pulsed laser deposition (PLD) technique is a suitable method for deposition of glass with complex composition. Amorphous Ge-Ga-Sb-S films (pure and dysprosium doped) were prepared by PLD using different energy of the laser beam pulses. Compositional, morphological and structural characteristics of the films were studied by MEB-EDS, atomic force, scanning electron microscopy, X-ray diffraction and Raman spectroscopy analyses. The photo-luminescence of Dy doped Ge-Ga-Sb-S films was investigated. The emission band centered at 1340 nm corresponding to 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions was identified in luminescence spectra of dysprosium doped thin films. A study of the optical properties and the effects of exposure and thermal annealing below the glass transition temperature on the optical parameters of thin films from the Ge-Ga-Sb-S system will be presented.

  2. Diffusion barrier performance of pulsed laser deposited amorphous tungsten carbide films

    NASA Astrophysics Data System (ADS)

    Ghaisas, Smita

    1991-12-01

    The performance of pulsed laser deposited tungsten carbide films as diffusion barriers between a <100> Si substrate and an Al overlayer has been investigated. Four-point probe measurement of resistance is employed to monitor the electrical stability of the Al/WC/Si metallization schemes upon thermal annealing in a vacuum for 30 min in a temperature range from 100 to 500 °C. The Glancing angle x-ray diffraction technique has been used to characterize the as-deposited as well as annealed samples. To study the metallurgical interaction between Al overlayer and the barrier film, experiments on isothermal annealings are carried out. The data obtained have been used to estimate the activation energy for the formation of the intermetallic compound WAl12. Morphological features of the annealed samples have been obtained by employing the technique of scanning electron microscopy.

  3. Vaporization and deposition of an intact polyimide precursor by resonant infrared pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2006-02-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent N-methyl pyrrolidinone (NMP). RIR-PLD transferred material showed two distinct geometries, droplets and string-like moieties. The unaltered nature of the deposited PAA was confirmed by Fourier transform infrared spectroscopy (FTIR). Thermal curing was achieved by heating for one hour on a 250°C hotplate, and the transformation to polyimide was demonstrated from changes in the FTIR spectrum following curing. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, with additional contrast shown between the various resonant frequencies used.

  4. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  5. Apparatus and method for pulsed laser deposition of materials on wires and pipes

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E. (Inventor)

    2003-01-01

    Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

  6. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  7. HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

    2014-03-01

    In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

  8. HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

    2013-05-01

    In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

  9. On the wetting behavior of ceria thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Fu, Sin-Pui; Rossero, Jorge; Chen, Chen; Li, Daniel; Takoudis, Christos G.; Abiade, Jeremiah T.

    2017-02-01

    Polymers are most widely used in the production of water-repellant coatings. However, their use in applications requiring wear resistance or high-temperature stability is extremely limited. A recent report suggests that wear resistant, thermally stable rare earth oxide materials like cerium dioxide (ceria) are intrinsically water repellant. We have studied this intriguing finding for ceria thin films fabricated by pulsed laser deposition (PLD) at different oxygen pressures and different substrate temperatures. We used a custom apparatus for measuring water contact angles on ceria films deposited by PLD. X-ray photoelectron spectroscopy was used to determine the relationship between the ceria wetting behavior and ceria surface chemistry. Our results show that ceria thin films are intrinsically hydrophilic and that hydrophobicity arises due to adsorption of hydrocarbon species after ˜24 h.

  10. Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry

    SciTech Connect

    Nemec, P.; Prikryl, J.; Frumar, M.; Nazabal, V.

    2011-04-01

    Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

  11. Effect of target density on the growth and properties of YGBCO thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liu, Linfei; Li, Yiejie; Wu, Xiang; Yao, Yanjie; Wang, Menglin; Wang, Binbin

    2016-12-01

    Some works found that target density had not a large effects on the superconducting or structural properties of YBa2Cu3O7-δ (YBCO) films prepared by pulsed laser deposition. However, the possible effect of target density on the Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) is not clear. In this paper, YGBCO thin films were deposited on flexible metal substrates by pulsed laser deposition using target with different densities. The density of each YGBCO target was varied from to 4.0 g/cm3 to 5.5 g/cm3. The aim of this study was to determine the relationship between the microstructure and superconducting properties of YGBCO films as a function of the target density. The film structures were examined by X-ray diffraction and field emission scanning electron microscopy. The superconducting properties of the YGBCO films were evaluated using the conventional four-probe method and PPMS. It was found that all the YGBCO films had pure c-axis orientation. The target density had effect on the surface morphology and superconducting properties of the YGBCO thin films. With increasing target density, the pore became larger and the distribution density and size of the particles became higher and larger, and the critical current Ic decreased. The YGBCO film deposited at a target density of 4.0 g/cm3 exhibited the highest critical current density Jc of 5.4 MA/cm2 at 77 K and self-field, 47.2 MA/cm2 at 0 T and 8.8 MA/cm2 at 9 T at 4.2 K and B//c.

  12. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    SciTech Connect

    Mamun, Md Abdullah Al; Farha, Ashraf Hassan; Ufuktepe, Yüksel; Elsayed-Ali, Hani E.; Elmustafa, Abdelmageed A.

    2015-03-01

    Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbNx films with larger grain sizes.

  13. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    PubMed

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  14. Highly sensitive NO2 sensors by pulsed laser deposition on graphene

    NASA Astrophysics Data System (ADS)

    Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Kasikov, Aarne; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo

    2016-09-01

    Graphene as a single-atomic-layer material is fully exposed to environmental factors and has therefore a great potential for the creation of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized—adsorption centers of different types and with high affinity to target gases have to be created at its surface. In the present work, the modification of graphene by small amounts of laser-ablated materials is introduced for this purpose as a versatile and precise tool. The approach has been demonstrated with two very different materials chosen for pulsed laser deposition (PLD)—a metal (Ag) and a dielectric oxide (ZrO2). It was shown that the gas response and its recovery rate can be significantly enhanced by choosing the PLD target material and deposition conditions. The response to NO2 gas in air was amplified up to 40 times in the case of PLD-modified graphene, in comparison with pristine graphene, and it reached 7%-8% at 40 ppb of NO2 and 20%-30% at 1 ppm of NO2. The PLD process was conducted in a background gas (5 × 10-2 mbar oxygen or nitrogen) and resulted in the atomic areal densities of the deposited materials of about 1015 cm-2. The ultimate level of NO2 detection in air, as extrapolated from the experimental data obtained at room temperature under mild ultraviolet excitation, was below 1 ppb.

  15. Structure and mechanical properties of low stress tetrahedral amorphous carbon films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bonelli, M.; Ferrari, A. C.; Fioravanti, A.; Li Bassi, A.; Miotello, A.; Ossi, P. M.

    2002-02-01

    Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength of 248 nm, ablating highly oriented pyrolytic graphite at room temperature, in a 10-2 Pa vacuum, at fluences ranging between 0.5 and 35 Jcm-2. Both (100) Si wafers and wafers covered with a SiC polycrystalline interlayer were used as substrates. Film structure was investigated by Raman spectroscopy at different excitation wavelength from 633 nm to 229 nm and by transmission Electron Energy Loss Spectroscopy. The films, which are hydrogen-free, as shown by Fourier Transform Infrared Spectroscopy, undergo a transition from mainly disordered graphitic to up to 80% tetrahedral amorphous carbon (ta-C) above a threshold laser fluence of 5 J cm-2. By X-ray reflectivity roughness, density and cross-sectional layering of selected samples were studied. Film hardness as high as 70 GPa was obtained by nanoindentation on films deposited with the SiC interlayer. By scratch test film adhesion and friction coefficients between 0.06 and 0.11 were measured. By profilometry we obtained residual stress values not higher than 2 GPa in as-deposited 80% sp3 ta-C films.

  16. Pulsed excimer laser processing

    NASA Technical Reports Server (NTRS)

    Wong, D.

    1985-01-01

    The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

  17. Pulsed excimer laser processing

    NASA Astrophysics Data System (ADS)

    Wong, D.

    1985-06-01

    The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

  18. The formation of GaAs/Si photodiodes by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Ullrich, Bruno; Erlacher, Artur; Jaeger, Herbert

    2004-07-01

    Hetero-pairing of thin-film GaAs on Si is of considerable interest for novel applications in optoelectronics. However, the formation of high-quality GaAs is difficult and requires expensive top technologies such as molecular beam epitaxy (MBE) and related methods. In general, MBE forms high-quality epitaxial layers but is not capable of the straightforward formation of GaAs on Si because of the 4.1% lattice mismatch between both materials. We have developed and explored the possibilities of pulsed-laser deposition (PLD) for the formation of GaAs films on (100) n-type Si substrates. The films have been produced in vacuum (10-6 torr) employing the fundamental (1064 nm), second (532 nm), and third (355 nm) harmonic emission of a Nd:YAG laser with a repetition rate of 10 Hz and a pulse duration of 6 ns. The laser was focused on (100) p-type (1019 cm-3) GaAs wafers with an energy fluence of 0.79-0.84 J/cm2. During the deposition, the substrate was not heated. The current-voltage characteristic of the samples showed rectification, i.e., the doping of the GaAs target was successfully maintained in the PLD film and a diode was formed in conjunction with the oppositely doped Si substrate. The observation of photocurrent without bias is an additional proof that an operating junction was achieved. The crystallographic quality of the films was checked by x-ray analysis and revealed that the films show [111]-oriented crystalline parts. The realization of GaAs/Si photodiodes reveals the potential of PLD to be used for the monolithic integration of GaAs photonic devices with Si circuits.

  19. Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

    PubMed Central

    Shah, Kamran; Haq, Izhar Ul; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process. PMID:24592190

  20. Experimental study of direct laser deposition of Ti-6Al-4V and Inconel 718 by using pulsed parameters.

    PubMed

    Shah, Kamran; Izhar Ul Haq; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Muhammad Tahir; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

  1. Growth of monocrystalline Cu(1 1 1) films on MgO(1 1 1) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Aweke, F.; Antoni, F.; Hulik, J.; Morvan, G.; Speisser, C.; Veis, P.; Le Normand, F.

    2015-05-01

    Copper (Cu) films with a minimal thickness of 300 nm were grown on MgO(1 1 1) substrates in high vacuum by pulsed laser deposition (PLD) at various temperatures to achieve a single crystal Cu film with flat terraces without grain boundaries. We investigated the effect of the substrate temperature, the pulse repetition rate, the deposition time and the laser fluence. A temperature threshold is observed above which the growth mode is changed from a uniform flat mode to a three dimensional mode. A combined process involving a germination step at moderate temperature followed by a growth step at higher temperature yields a 450 nm almost continuous film.

  2. Unique aspects of laser energy deposition in the fs pulse regime

    SciTech Connect

    Feit, M.D.; Rubenchik, A.M.; Shore, B.W.

    1996-02-02

    Ultrashort laser pulse tissue ablation has demonstrated advantages of greatly reduced required energy and collateral damage. These advantages stem directly from the fact that laser energy is absorbed nonlinearly in a time too hsort for significant thermal dn hydrodynamic response. The high peak power and short pulse duration both have implications for practical fiber delivery systems.

  3. Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Sikora, A.; Garrelie, F.; Donnet, C.; Loir, A. S.; Fontaine, J.; Sanchez-Lopez, J. C.; Rojas, T. C.

    2010-12-01

    The characterization of diamondlike carbon (DLC) films is a challenging subject, considering the diversity of carbon-based nanostructures depending on the deposition process. We propose to combine multiwavelength (MW) Raman spectroscopy and electron energy-loss spectroscopy (EELS) to probe the structural disorder and the carbon hybridizations of DLC films deposited by pulsed laser ablation performed either with a nanosecond laser (film labeled ns-DLC), either with a femtosecond laser (film labeled fs-DLC). Such deposition methods allow to reach a rather high carbon sp3 hybridization but with some significant differences in terms of structural disorder and carbonaceous chain configurations. MW Raman investigations, both in the UV and visible range, is a popular and nondestructive way to probe the structural disorder and the carbon hybridizations. EELS allows the determination of the carbon plasmon energy in the low-loss energy region of the spectra, as well as the fine structure of the ionization threshold in the high-loss energy region. The paper shows that the combination of MW Raman and EELS is a powerful way to elucidate the nanostructure of DLC films. Complementary nanoindentation investigations allow to correlate the analytical results with the mechanical properties of the films. The ns-DLC film presents a stronger sp3-bonded C character (74%-85%) with a significant content of sp2 chains, whereas the fs-DLC contains less sp3 bonds (35%-50%) with a significant content of sp2-bonded C rings. The ns-DLC film exhibits a higher proportion of disordered sp2 C mainly in the form of chains. Comparatively, the fs-DLC exhibits a predominance of more ordered sp2 C structures in the form of graphitic aggregates whose size has been estimated near three aromatic rings. The film characteristics are in agreement with their mechanical properties. We also propose a correlation between the nanostructure and composition of the films with the deposition mechanisms. The difference

  4. Visible light-harvesting of TiO2 nanotubes array by pulsed laser deposited CdS

    NASA Astrophysics Data System (ADS)

    Bjelajac, Andjelika; Djokic, Veljko; Petrovic, Rada; Socol, Gabiel; Mihailescu, Ion N.; Florea, Ileana; Ersen, Ovidiu; Janackovic, Djordje

    2014-08-01

    Titanium dioxide (TiO2) nanotubes arrays, obtained by anodization technique and annealing, were decorated with CdS using pulsed laser deposition method. Their structural, morphological and chemical characterization was carried out by electron microscopy in scanning (SEM) and transmission (TEM) modes, combined with energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS). It was demonstrated that the quantity of deposited CdS can be controlled by varying the number of laser pulses. The chemical mapping of the elements of interest was performed using the energy filtered mode of the electron microscope. The results showed that pulse laser deposition is an adequate technique for deposition of CdS inside and between 100 nm wide TiO2 nanotubes. The diffuse reflectance spectroscopy investigation of selected samples proved that the absorption edge of the prepared CdS/TiO2 nanocomposites is significantly extended to the visible range. The corresponding band gaps were determinated from the Tauc plot of transformed Kubelka-Munk function. The band gap reduction of TiO2 nanotubes by pulsed laser deposition of CdS was put in evidence.

  5. Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

    SciTech Connect

    Lu, Y.F.; Sun, J.; Yu, D.; Shi, L.Q.; Dong, Z.B.; Wu, J.D.

    2006-05-15

    We developed a method for compound host film synthesis and in situ doping based on plasma assisted pulsed laser deposition by coablation of two targets with two pulsed laser beams. The feasibility of this method was demonstrated by the preparation of Er-doped GaN films. In the reactive nitrogen environment and with the assistance of nitrogen plasma generated from electron cyclotron resonance microwave discharge, the ablation of a polycrystalline GaAs target resulted in the reactive deposition of a GaN host film, whereas the ablation of a metallic Er target provided the host with Er atoms for in situ doping in the growing GaN host film. Hexagonal GaN films were formed on a silicon substrate as the host and Er was incorporated into the host with controlled concentration. We found that the composition of the compound host could be adjusted by varying the laser fluence on the target for host deposition or the energy of the plasma stream bombarding the growing host film. The dopant concentration could also be independently controlled to vary in a wide range by changing the pulse repetition ratio of the two laser beams or the laser fluence on the target for dopant supply. It was also proved that doping of very low concentrations could be easily realized by simply adjusting the pulse repetition rate and the fluence of the second laser.

  6. Properties of ion-assisted pulsed laser deposited H-BN/C-BN layer systems

    NASA Astrophysics Data System (ADS)

    Weissmantel, Steffen; Reisse, Guenter

    2000-02-01

    Boron nitride films were prepared by pulsed laser ablation from a boron nitride target using a KrF-excimer laser, where the growing films were deposited in nitrogen atmosphere or bombarded by a nitrogen/argon ion beam. Films deposited at ion-to-arriving-target-atom ( I/ A) ratios at the substrate below 0.5 (l-BN) are hexagonal. Nucleation of the cubic phase (c-BN) takes place exclusively with ion bombardment at I/ A ratios above 1.0, which may be reduced down to 0.6 after the completion of the nucleation process. The adhesion of c-BN films is improved significantly using l-BN films as intermediate layers. Up to 400-nm thick c-BN films have been investigated by cross-section transmission electron microscopy (TEM). The l-BN layers show a strong preferred orientation with the c-axis parallel to the substrate surface. The crystallites of the nearly phase pure c-BN layers show strong <110> preferred orientation. The Vickers microhardness of l-BN films is in the range of 25-5 GPa and the compressive stresses in the range of 2-16 GPa. The compressive stresses of 400-nm thick c-BN films were in the range of 4-6 GPa.

  7. Laser assisted deposition

    NASA Technical Reports Server (NTRS)

    Dutta, S.

    1983-01-01

    Applications of laser-based processing techniques to solar cell metallization are discussed. Laser-assisted thermal or photolytic maskless deposition from organometallic vapors or solutions may provide a viable alternative to photovoltaic metallization systems currently in use. High power, defocused excimer lasers may be used in conjunction with masks as an alternative to direct laser writing to provide higher throughput. Repeated pulsing with excimer lasers may eliminate the need for secondary plating techniques for metal film buildup. A comparison between the thermal and photochemical deposition processes is made.

  8. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  9. Fabrication of Nanocomposite Thermoelectric Materials by a Pulsed Laser Deposition Method

    NASA Astrophysics Data System (ADS)

    Matsubara, Masato; Azuma, Hirozumi; Asahi, Ryoji

    2011-05-01

    We applied a pulsed laser deposition (PLD) technique to fabricate nanocomposite half-Heusler thermoelectrics by employing two different methods: a dry process and a wet process. First, we tried to obtain nanosized thermoelectric particles by using PLD in a liquid solvent. Nanosized (<100 nm) spherical and crystalline half-Heusler particles containing Ti, Zr, Hf, Ni, and Sn elements were obtained by this method, showing good controllability of stoichiometry. The key is to select a solvent that prevents oxidation. Second, the dry PLD process was employed to coat the thermoelectric powder with metal oxides. To this end, we developed a PLD coating apparatus. After sintering the coated powder using the spark plasma sintering (SPS) technique, we confirmed that a nanosized layer of the metal oxides was uniformly formed at the grain boundaries of the half-Heusler matrix. With these two examples, the capability of the PLD techniques to fabricate well-controlled nanocomposite thermoelectric materials is demonstrated.

  10. Pulsed Nd-YAG laser deposition of TiN and TiAlN coating

    NASA Astrophysics Data System (ADS)

    Kathuria, Y. P.; Uchida, Yoshiyuki

    This paper demonstrates the feasibility of generating a thin clad coating of TiN and TiAlN on SS304 base material by using the pulsed Nd-YAG laser. In the experiment TiN based coating was created with and without the addition of Al-powder. In the post processing, a precision grinder was employed to smoothen the top surface. SEM, XRD and EDS analysis were employed to study the surface topography etc. Microhardness mapping was performed at various points across the surface. The results show the average microhardness of the coating deposited with TiN is lower (1035 HV) than that of using Al-mixed powder (1264 HV).

  11. Carbon Ion Irradiation Effects on Pulsed Laser Deposited Titanium Nitride Thin Films

    NASA Astrophysics Data System (ADS)

    Mahmood, Khaliq; Bashir, Shazia; Akram, Mahreen; Hayat, Asma; Faizan-Ul-Haq; Saadat, Shahzad

    2015-02-01

    Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

  12. p-Type zinc oxide films grown by infrared-light-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hiraide, Toshihiro; Kurumi, Satoshi; Suzuki, Kaoru

    2013-03-01

    In this paper, ZnO films were grown on sapphire (0001) substrates by infrared-light-assisted pulsed-laser deposition (IRA-PLD). In addition, a nitrogen-plasma-assisted (PA-N) system was utilized for effectively doping the acceptor by radio frequency induction coupled plasma (RF-ICP). The effect of IRA-PLD and PA-N systems was investigated by studying the difference in substrate temperature with and without plasma assistance. We found that ZnO films exhibit no exciton emission with PA-N at a high temperature and that an increase in the substrate temperature yields ZnO films with a (002) and c-axis preferred orientation in a nitrogen (N2) gas atmosphere. ZnO films are changed from n-type to p-type at a substrate temperature of 673 K by IRA-PLD with an N2 background atmosphere.

  13. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  14. Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Schwoediauer, Reinhard; Bauer-Gogonea, Simona; Bauer, Stefan; Heitz, J.; Arenholz, Enno; Baeuerle, Dieter

    1999-12-01

    Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

  15. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

    SciTech Connect

    Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

    2015-09-01

    We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

  16. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    SciTech Connect

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro; Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  17. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  18. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  19. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    NASA Astrophysics Data System (ADS)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  20. Substrate temperature and oxygen pressure dependence of pulsed laser-deposited Sr ferrite films

    NASA Astrophysics Data System (ADS)

    Papakonstantinou, P.; O'Neill, M.; Atkinson, R.; Salter, I. W.; Gerber, R.

    1996-01-01

    The effect of substrate temperature and oxygen pressure on the microstructure, magnetic and magneto-optical properties of Sr ferrite (SrM) films grown on (001) single-crystal sapphire substrates by pulsed laser deposition has been investigated. Polycrystalline SrM films with perpendicular magnetic anisotropy could be prepared under a wide range of oxygen pressures and relatively high temperatures, sufficient to crystallise the material. However, an almost exclusive c-axis orientation normal to the film plane could be attained only at a narrow operational window centered at 0.1 mbar and 840°C. The magneto-optical properties of the films were comparable to those of the bulk barium hexaferrite single-crystal material. In addition, results obtained by atomic force microscopy provide convincing evidence that the growth of Sr ferrite on sapphire takes place by a spiral growth mechanism.

  1. Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orsel, Kasper; Groenen, Rik; Bastiaens, Bert; Koster, Gertjan; Rijnders, Guus; Boller, Klaus-J.

    2016-12-01

    We record the two-dimensional laser-induced fluorescence (LIF) on multiple plasma constituents in a YBiO3 plasma. This allows us to directly link the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO3 films. With spatiotemporal LIF mapping of the plasma species (Y, YO, Bi, and BiO) in different background gas compositions, we find that little direct chemical interaction takes place between the plasma plume constituents and the background gas. However, a strong influence of the background gas composition can be seen on the YBO film growth, as well as a strong correlation between the oxygen fraction in the background gas and the amount of YO in the plasma plume. We assign this correlation to a direct interaction between the background gas and the target in between ablation pulses. In an O2 background, an oxygen-rich surface layer forms in between ablation pulses, which provides additional oxygen for the plasma plume during target ablation. This differs from our previous observations in STO and LAO plasmas, where species oxidation primarily takes place during propagation of the plasma plume towards the substrate.

  2. Preparation of calcium-doped boron nitride by pulsed laser deposition

    SciTech Connect

    Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

    2012-08-15

    Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca{sub x}BN{sub y} (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al{sub 2}O{sub 3}(0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca{sub 3}N{sub 2} disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

  3. Formation and properties of novel artificially-layered cuprate superconductors using pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Chakoumakos, B.C.; Budai, J.D.

    1996-03-01

    Pulsed-laser deposition and epitaxial stabilization have been effectively used to engineer artificially-layered thin-film materials. Novel cuprate compounds have been synthesized using the constraint of epitaxy to stabilize (Ca,Sr)CuO{sub 2}/(Ba,Ca,Sr)CuO{sub 2} superconducting superlattices in the infinite layer structure. Superlattice chemical modulation can be observed from the x-ray diffraction patterns for structures with SrCuO{sub 2} and (Ca, Sr)CuO{sub 2} layers as thin as a single unit cell ({approximately}3. 4 {angstrom}). X-ray diffraction intensity oscillations, due to the finite thickness of the film, indicate that (Ca,Sr)CuO{sub 2} films grown by pulsed-laser deposition are extremely flat with a thickness variation of only {approximately}20 {angstrom} over a length scale of several thousand angstroms. This enables the unit-cell control of (Ca, Sr)CuO{sub 2} film growth in an oxygen pressure regime in which in situ surface analysis using electron diffraction is not possible. With the incorporation of BaCuO{sub 2} layers, superlattice structures have been synthesized which superconduct at temperatures as high as 70 K. Dc transport measurements indicate that (Ca, Sr)CuO{sub 2}/BaCuO{sub 2} superlattices are two dimensional superconductors with the superconducting transition primarily associated with the BaCuO{sub 2} layers. Superconductivity is observed only for structures with BaCuO{sub 2} layers at least two unit cells thick with {Tc} decreasing as the (Ca,Sr)CuO{sub 2} layer thickness increases. Normalized resistance in the superconducting region collapse to the Ginzburg-Landau Coulomb gas universal resistance curve consistent with the two-dimensional vortex fluctuation model.

  4. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    PubMed

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  5. Antibacterial copper-nickel bilayers and multilayer coatings by pulsed laser deposition on titanium.

    PubMed

    Vishwakarma, Vinita; Josephine, J; George, R P; Krishnan, R; Dash, S; Kamruddin, M; Kalavathi, S; Manoharan, N; Tyagi, A K; Dayal, R K

    2009-11-01

    Biofouling, especially microfouling, is a major concern with the use of titanium (Ti) in the marine environment as a condenser material in cooling water systems. Earlier, copper-nickel (Cu/Ni) alloys were extensively used in marine environments due to their high corrosion and biofouling resistance. However, the choice of condenser material for the new fast breeder reactor in Kalpakkam is Ti to avoid steam side corrosion problems, which may pose a threat to steam generator parts having sodium as the secondary coolant. This study evaluates the surface modification of Ti using nano films of copper (Cu) and nickel (Ni) to utilize the antibacterial property of copper ions in reducing microfouling. The surface modification of Ti was carried out by the deposition of a Cu/Ni bilayer and (Cu/Ni)(10) multilayer films using a pulsed laser deposition technique. Various surface characterization studies revealed that the deposited Cu/Ni films were thin and nanocrystalline in nature. The antibacterial properties were evaluated using total viable count and epifluorescence microscopic techniques. The results showed an apparent decrease in bacterial attachment on multilayered and bilayered Cu/Ni thin films on Ti surfaces. Comparative studies between the two types of films showed a bigger reduction in numbers of microorganisms on the multilayers.

  6. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  7. Nano-cube MgO formed on silicon substrate using pulsed laser deposition.

    PubMed

    Kaneko, Satoru; Ito, Takeshi; Akiyama, Kensuke; Yasui, Manabu; Hirabayashi, Yasuo; Soga, Masayasu; Miyake, Yumiko; Yoshimoto, Mamoru

    2012-03-01

    Nano-cube MgO particles were formed on Si substrates by deposition of an MgO target using pulsed laser deposition method. An epitaxial film grows on Si(001) substrate with its contraction of lattice constants. In this study, expecting high quality MgO film, the MgO film prepared in the oxygen pressure ranging from 75-400 mTorr at the high temperature of -750 degrees C. The deposited MgO showed the growth of (001) preferred orientation on the Si(001) substrate. However, X-ray Photoelectron Spectroscopy (XPS) indicated the MgO film did not form a continuous film on the Si surface. Interestingly, the surface morphology observed by an Atomic Force Microscopy (AFM) showed nano-cube MgO particles scattered on the smooth surface of Si substrate. After annealing the nano-cube MgO, the shape of MgO particles were changed from nano-cube to round shaped particles. The AFM image of the surface showed round shaped MgO nanoparticles scattered on rough surface. X-ray Diffraction (XRD) revealed the epitaxial growth of MgO(001) with cubic on cubic arrangement on the Si(001) substrate (MgO[100] parallel to Si[100]).

  8. Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

    PubMed Central

    Gondoni, Paolo; Ghidelli, Matteo; Di Fonzo, Fabio; Li Bassi, Andrea; Casari, Carlo S.

    2013-01-01

    Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (>80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4. PMID:23486076

  9. Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

    SciTech Connect

    Uddin, Md Ahsan E-mail: gkoley@clemson.edu; Koley, Goutam E-mail: gkoley@clemson.edu; Glavin, Nicholas; Singh, Amol; Naguy, Rachel; Jespersen, Michael; Voevodin, Andrey

    2015-11-16

    Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO{sub 2} was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO{sub 2} has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO{sub 2} substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO{sub 2} (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm{sup 2}/V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 10{sup 11 }cm{sup −2} was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping.

  10. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  11. n-type In2S3 films deposited by pulsed laser deposition: effect of laser power on the properties of the films

    NASA Astrophysics Data System (ADS)

    Wu, Chunyan; Mao, Dun; Liu, Zhu; Liang, Qi; Chen, Shirong; Yu, Yongqiang; Wang, Li; Luo, Linbao; Xu, Jun

    2015-05-01

    Pulsed laser deposition (PLD) with different levels of laser power was first used to deposit In2S3 films from homemade, high-purity In2S3 targets. This process was followed by post-annealing in an N2 atmosphere to improve the films’ crystallinity and conductivity. The annealed films were verified to be stoichiometric, body-centered, tetragonal In2S3 with the preferred orientation (103). The bandgap of the films decreased from 2.8 to 2.2 eV with an increase in the laser power, which was believed to be the result of the grain growth caused by the higher laser power. The electrical transport property of the bottom-gate field-effect transistor revealed the n-type conduction of the annealed In2S3 films, and the heterojunction p+-Si/annealed In2S3 film showed remarkable photovoltaic behavior upon light illumination, indicating that PLD-deposited In2S3 films may have great potential as a buffer layer in thin-film solar cells. What’s more, doped In2S3 films can be easily realized due to the fairly stoichiometric transfer of the PLD method.

  12. Excitation-induced germanium quantum dot growth on silicon(100)-2X1 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali Oguz

    2011-12-01

    Self-assembled Ge quantum dots (QD) are grown on Si(100)-(2x1) with laser excitation during growth processes by pulsed laser deposition (PLD). In situ reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth dynamics and morphology of the QDs. A Q-switched Nd:YAG laser (lambda = 1064 nm, 40 ns pulse width, 5 J/cm2 fluence, and 10 Hz repetition rate) were used to ablate germanium and irradiate the silicon substrate. Ge QD formation on Si(100)-(2x1) with different substrate temperatures and excitation laser energy densities was studied. The excitation laser reduces the epitaxial growth temperature to 250 °C for a 22 ML film. In addition, applying the excitation laser to the substrate during the growth changes the QD morphology and density and improves the uniformity of quantum dots fabricated at 390 °C. At room temperature, applying the excitation laser during growth decreases the surface roughness although epitaxial growth could not be achieved. We have also studied the surface diffusion coefficient of Ge during pulsed laser deposition of Ge on Si(100)-(2x1) with different excitation laser energy densities. Applying the excitation laser to the substrate during the growth increases the surface diffusion coefficient, changes the QD morphology and density, and improves the size uniformity of the grown quantum dots. To study the effect of high intensity ultralast laser pulses, Ge quantum dots on Si(I00) were grown in an ultrahigh vacuum (UHV) chamber (base pressure ˜7.0x10 -10 Torr) by femtosecond pulsed laser deposition. The results show that excitation laser reduces the epitaxial growth temperature to ˜70 °C. This result could lead to nonthermal method to achieve low temperature epitaxy which limits the redistribution of impurities, reduces intermixing in heteroepitaxy, and restricts the generation of defects by thermal stress. We have ruled out thermal effects and some of the desorption

  13. Pulsed laser deposited cobalt-doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Wang, Li; Su, Xue-qiong; Lu, Yi; Chen, Jiang-bo

    2013-09-01

    To realize the room-temperature ferromagnetism (RTFM) in diluted magnetic semiconductors (DMS), we prepared a series of Cobalt-doped ZnO thin films using pulsed laser deposition (PLD) at deposition temperatures 500°C under oxygen pressure from 2.5×10-4 Pa to 15 Pa. To elucidate the physical origin of RTFM, Co 2p spectra of cobalt-doped ZnO thin films was measured by X-ray photoelectron spectroscopy (XPS). The magnetic properties of films were measured by an alternating gradient magnetometer (AGM), and the electrical properties were detected by a Hall Effect instrument using the Van der Pauw method. XPS analysis shows that the Co2+ exists and Co clusters and elemental content change greatly in samples under various deposition oxygen pressures. Not only the valence state and elemental content but also the electrical and magnetic properties were changed. In the case of oxygen pressure 10 Pa, an improvement of saturation magnetic moment about one order of magnitude over other oxygen pressure experiments, and the film exhibits ferromagnetism with a curie temperature above room temperature. It was found that the value of carrier concentration in the Co-doped ZnO film under oxygen pressure 10Pa increases about one order of magnitude than the values of other samples under different oxygen pressure. Combining XPS with AGM measurements, we found that the ferromagnetic signals in cobalt-doped ZnO thin film deposited at 500 °C under oxygen pressure 10 Pa only appear with the detectable Co2+ spectra from incompletely oxidized Co metal or Co cluster. So oxygen pressure 10 Pa can be thought the best condition to obtain room-temperature dilute magnetic semiconductor about cobalt-doped ZnO thin films.

  14. Transmission of reactive pulsed laser deposited VO2 films in the THz domain

    NASA Astrophysics Data System (ADS)

    Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed

    2016-08-01

    This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO2) films in the terahertz (THz) frequency range, namely the transition temperature TIMT, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O2 pressure (PO2) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO2 films obtained at low PO2 exhibit low TIMT, large ΔA, and narrow ΔH. Increasing PO2 results in VO2 films with higher TIMT, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

  15. Biocompatible Mn2+-doped carbonated hydroxyapatite thin films grown by pulsed laser deposition.

    PubMed

    György, E; Toricelli, P; Socol, G; Iliescu, M; Mayer, I; Mihailescu, I N; Bigi, A; Werckman, J

    2004-11-01

    Mn(2+)-doped carbonated hydroxyapatite (Mn-CHA) thin films were obtained by pulsed laser deposition on Ti substrates. The results of the performed complementary diagnostic techniques, X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy investigations indicate that the films are crystalline with a Ca/P ratio of about 1.64-1.66. The optimum conditions, when nearly stoichiometric crystalline thin films were deposited, were found to be 10 Pa oxygen pressure, 400 degrees C substrate temperature, and postdeposition heat treatment in water vapors at the same substrate temperature. The films were seeded with L929 fibroblast and hFOB1.19 osteoblast cells and subjected to in vitro tests. Both fibroblast and osteoblast cells have a good adherence on the Mn-CHA film and on the Ti or polystyrene references. Proliferation and viability tests showed that osteoblast cells growth on Mn-CHA-coated Ti was enhanced as compared to uncoated pure Ti surfaces. Caspase-1 activity was not affected significantly by the material, showing that Mn-CHA does not induce apoptosis of cultured cells. These results demonstrate that Mn-CHA films on Ti should provoke a faster osteointegration of the coated implants as compared to pure Ti. (c) 2004 Wiley Periodicals, Inc. J Biomed Mater Res 71A: 353-358, 2004.

  16. Growth of p-type ZnOS films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kenkichiro; Ohtsuki, Tohru; Tomita, Yasumasa; Kohno, Yosiumi; Maeda, Yasuhisa; Matsushima, Shigenori

    2017-01-01

    ZnO1-xSx films were deposited on quartz substrates by pulsed laser deposition (PLD) of ZnO1-xSx targets. The ZnO1-xSx films with S-contents of 0.03-0.17 were grown from the ZnO1-xSx targets sulfured at temperatures of 200 and 500 °C. The resistivity of the ZnO1-xSx films is slightly increased with the S-content. An increase of the O2-partial pressure in an atmosphere reduces the S-content in the films and drastically enhances the resistivity of the films. However, the carrier type of the films is still n-type. In order to incorporate excess S atoms into films, evaporation of Sulfur was performed during the PLD process. As a temperature of the S-evaporation is raised, the resistivity of the films is significantly enhanced and hole-conductivity appears in the films grown by the S-evaporation at 80 and 90 °C. By X-ray photoelectron spectroscopic measurements, the presence of SOx species is confirmed for the p-type ZnO1-xSx film. Both interstitial SO3 or SO4 clusters and complexes of Zn-vacancy with H are considered to be appropriate acceptors responsible for the hole-conductivity at room temperature.

  17. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    NASA Astrophysics Data System (ADS)

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-01

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Srn+1TinO3n+1 Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  18. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  19. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Lo, Fang-Yuh; Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Chern, Ming-Yau; Liu, Hsiang-Lin

    2015-06-01

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  20. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, Michael D.

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  1. Enhanced Photocatalytic Performance Depending on Morphology of Bismuth Vanadate Thin Film Synthesized by Pulsed Laser Deposition.

    PubMed

    Jeong, Sang Yun; Choi, Kyoung Soon; Shin, Hye-Min; Kim, Taemin Ludvic; Song, Jaesun; Yoon, Sejun; Jang, Ho Won; Yoon, Myung-Han; Jeon, Cheolho; Lee, Jouhahn; Lee, Sanghan

    2017-01-11

    We have fabricated high quality bismuth vanadate (BiVO4) polycrystalline thin films as photoanodes by pulsed laser deposition (PLD) without a postannealing process. The structure of the grown films is the photocatalytically active phase of scheelite-monoclinic BiVO4 which was obtained by X-ray diffraction (XRD) analysis. The change of surface morphology for the BIVO4 thin films depending on growth temperature during synthesis has been observed by scanning electron microscopy (SEM), and its influence on water splitting performance was investigated. The current density of the BiVO4 film grown on a glass substrate covered with fluorine-doped tin oxide (FTO) at 230 °C was as high as 3.0 mA/cm(2) at 1.23 V versus the potential of the reversible hydrogen electrode (VRHE) under AM 1.5G illumination, which is the highest value so far in previously reported BiVO4 films grown by physical vapor deposition (PVD) methods. We expect that doping of transition metal or decoration of oxygen evolution catalyst (OEC) in our BiVO4 film might further enhance the performance.

  2. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    DOE PAGES

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; ...

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can bemore » utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.« less

  3. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-30

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  4. Pulsed laser-deposited VO2 thin films on Pt layers

    NASA Astrophysics Data System (ADS)

    Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

    2013-03-01

    VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

  5. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    SciTech Connect

    Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

  6. Pulsed laser deposition: Superconducting films. (Latest citations from the INSPEC: Information Services for the Physics and Engineering Communities database). Published Search

    SciTech Connect

    Not Available

    1993-03-01

    The bibliography contains citations concerning technology and evaluation of pulsed laser deposition of superconducting films. Citations discuss the deposition of yttrium-barium based high-temperature superconducting thin films on a variety of substrates. Topics also examine laser ablation, film structures and quality, epitaximal growth, substrate temperature, doping materials, bismuth-strontium based superconducting films, pulsed excimer laser, critical current density, and microwave surface resistance. (Contains a minimum of 190 citations and includes a subject term index and title list.)

  7. Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition

    SciTech Connect

    Soltani, M.; Chaker, M.; Haddad, E.; Kruzelesky, R. V.

    2006-05-15

    Thermochromic undoped and metal (Ti and W)-doped VO{sub 2} smart coatings were achieved on Kapton HN by reactive pulsed laser deposition. The optimization of the deposition was conducted with Si (100) substrates. The coatings were deposited at relatively low deposition temperatures (250, 300, and 350 deg. C), which are compatible with the characteristics of Kapton. The stoichiometry of the VO{sub 2}-coated Kapton was confirmed by x-ray photoelectron spectroscopy analysis of the vanadium and oxygen bands. Moreover, the single phase VO{sub 2} was confirmed by x-ray diffraction of VO{sub 2}/Si synthesized at 300 deg. C. Unlike VO{sub 2}/Kapton, the VO{sub 2}/Si exhibited the well-known semiconductor-to-metallic transition, as shown by the temperature dependence of the infrared transmittance. This coating exhibited a similar transition temperature to that of VO{sub 2} single crystal ({approx_equal}68 deg. C), but a small transmittance switching (about 7%) at 2.5 {mu}m. The temperature dependence of the electrical resistivity of all coatings on Kapton was investigated by means of the standard four-point probe technique. The resistivity decreased with increasing temperature. No abrupt semiconductor-to-metallic transition was observed either for undoped or for metal-doped VO{sub 2} coatings. It was found that Ti and W dopants have an antagonistic effect on the resistivity. The resistivity was enhanced by the Ti dopant, whereas it was decreased for W-doped VO{sub 2} coatings. These results show that the tunability of the resistivity can be tailored either by controlling the deposition temperature or by adjusting the concentration of Ti and W dopants. In addition, at room temperature a much higher temperature coefficient of resistance of -3.29%/ deg. C was achieved in W(0.5%)-doped VO{sub 2}/Kapton. Finally, these VO{sub 2} smart coatings are promising materials for the IR sensing and sunshield applications.

  8. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  9. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    NASA Astrophysics Data System (ADS)

    Ehsani, M. H.; Mehrabad, M. Jalali; Kameli, P.

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films.

  10. Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

    SciTech Connect

    Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

    2014-07-21

    Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

  11. Fabrication of antimicrobial silver-doped carbon structures by combinatorial pulsed laser deposition.

    PubMed

    Mihailescu, Ion N; Bociaga, Dorota; Socol, Gabriel; Stan, George E; Chifiriuc, Mariana-Carmen; Bleotu, Coralia; Husanu, Marius A; Popescu-Pelin, Gianina; Duta, Liviu; Luculescu, Catalin R; Negut, Irina; Hapenciuc, Claudiu; Besleaga, Cristina; Zgura, Irina; Miculescu, Florin

    2016-12-30

    We report on the selection by combinatorial pulsed laser deposition of Silver-doped Carbon structures with reliable physical-chemical characteristics and high efficiency against microbial biofilms. The investigation of the films was performed by scanning electron microscopy, high resolution atomic force microscopy, energy dispersive X-Ray Spectroscopy, X-ray diffraction, Raman spectroscopy, bonding strength "pull-out" tests, and surface energy measurements. In vitro biological assays were carried out using a large spectrum of bacterial and fungal strains, i.e., Staphylococcus aureus, Staphylococcus epidermidis, Pseudomonas aeruginosa, Enterococcus faecalis and Candida albicans. The biocompatibility of the films obtained was evaluated on MG63 mammalian cell cultures. The optimal combination with reasonable physical-chemical properties, efficient protection against microbial colonization and beneficial effects on human cells was found for Silver-doped Carbon films containing 2 to 7 at.% silver. These mixtures can be used to fabricate safe and efficient coatings of metallic implants, with the goal to decrease the risk of implant associated biofilm infections which are difficult to treat and often responsible for implant failure.

  12. Pulsed-laser deposition of crystalline cobalt ferrite thin films at lower temperatures

    NASA Astrophysics Data System (ADS)

    Jiles, David; Raghunathan, Arun; Nlebedim, Ikenna; Snyder, John

    2010-03-01

    Cobalt ferrite thin films have been proposed for various engineering applications due to their exceptional magnetic, magnetoelastic, magnetotransport, magnetooptical properties. In this research, cobalt ferrite thin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition (PLD) technique at substrate temperatures ranging from 250 C to 600 C. It has been shown in this study, that polycrystalline films with (111)-preferred orientation can be prepared at substrate temperatures as low as 250 C, as opposed to a report of optimum 600 C substrate temperature [1]. Thermal expansion mismatch between the film and substrate was found to have a substantial effect on the magnetic properties of the cobalt ferrite films, due to the large magnetoelastic coupling of cobalt ferrite. The growth of crystalline cobalt ferrite films at such low temperatures indicates the potential to use cobalt ferrite for MEMS devices and sensor applications [2] including integration with a wider range of multilayered device structures. This research was supported by the UK EPSRC (EP/D057094) and the US NSF (DMR-0402716). [1] J. Zhou et. al, Applied Surface Sciences, 253 (2007), p. 7456. [2] J. A. Paulsen et. al., Journal of Applied Physics, 97 (2005), p. 044502.

  13. One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition

    PubMed Central

    Loh, Tamie A. J.; Chua, Daniel H. C.; Wee, Andrew T. S.

    2015-01-01

    Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect-to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its structural analogue MoS2. Here we report the direct fabrication of highly crystalline few-layer WS2 on silver substrates by pulse laser deposition at the relatively low temperature of 450 °C. The growth takes places by conventional epitaxy, through the in-situ formation of nearly lattice-matching Ag2S on the silver surface. Intriguingly, it was observed that the resulting film was composed of not only the usual semiconducting 2H-WS2 structure but also the less common metallic 1T-WS2. Modifications of the synthesis parameters allow for control over the crystalline quality, film thickness and crystal phase composition of the resulting WS2 film. PMID:26657172

  14. Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO3

    NASA Astrophysics Data System (ADS)

    Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.; Lee, Ho Nyung; Christen, H. M.; Zschack, P.; Larson, B. C.

    2016-11-01

    We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO3 . We show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD "self-organizes" local step flow on a length scale consistent with the substrate temperature and PLD parameters.

  15. Reinforced Pulsed Laser-Deposited Hydroxyapatite Coating on 316 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Bajpai, Shubhra; Gupta, Ankur; Pradhan, Siddhartha Kumar; Mandal, Tapendu; Balani, Kantesh

    2014-10-01

    Hydroxyapatite (HA) is a widely used bioceramic known for its chemical similarity with that of bone and teeth (Ca/P ratio of 1.67). But, owing to its extreme brittleness, α-Al2O3 is reinforced with HA and processed as a coating via pulsed laser deposition (PLD). Reinforcement of α-Al2O3 (50 wt.%) in HA via PLD on 316L steel substrate has shown modulus increase by 4% and hardness increase by 78%, and an improved adhesion strength of 14.2 N (improvement by 118%). Micro-scratching has shown an increase in the coefficient-of-friction from 0.05 (pure HA) to 0.17 (with 50 wt.% Al2O3) with enhancement in the crack propagation resistance (CPR) up to 4.5 times. Strong adherence of PLD HA-Al2O3 coatings (~4.5 times than that of HA coating) is attributed to efficient release of stored tensile strain energy (~17 × 10-3 J/m2) in HA-Al2O3 composites, making it a potential damage-tolerant bone-replacement surface coating.

  16. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Preziosi, Daniele; Sander, Anke; Barthélémy, Agnès; Bibes, Manuel

    2017-01-01

    Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  17. Phase control of Mn-based spinel films via pulsed laser deposition

    SciTech Connect

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; Bedzyk, Michael J.; Fenter, Paul

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.

  18. Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

    SciTech Connect

    Li Yuanjie; Liu Zilong; Ren Jiangbo

    2011-05-15

    Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O{sub 2} exhibited p-type conductivity with hole concentration of 5x10{sup 17} cm{sup -3} and hole mobility of 0.3 cm{sup 2}/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites P{sub Zn} and zinc vacancies V{sub Zn} in the P-doped ZnO films.

  19. Manifestation of unusual size effects in granular thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sergeenkov, S.; Cichetto, L.; Diaz, J. C. C. A.; Bastos, W. B.; Longo, E.; Araújo-Moreira, F. M.

    2016-11-01

    We demonstrate manifestation of some rather unusual size effects in granular thin films prepared by a pulsed laser deposition technique. We observed that the temperature dependence of resistivity ρ(T) notably depends on the relation between the grain size Rg and the film thickness d. Namely, more granular LaNiO3 thin films (with small values of Rg) grown on LaAlO3 substrate are found to follow a universal ρ(T) ∝T 3 / 2 law for all the measured temperatures. While less granular thin films (with larger values of Rg), exhibit a more complicated behavior accompanied by a clear-cut crossover (around Tcr = 200 K), from ρ(T) ∝T 3 / 2 (for 20 K < T < 200 K) to ρ(T) ∝ T (for 200 K < T < 300 K). The obtained results are attributed to manifestation of the finite temperature size effects (when an average grain size Rg becomes comparable with the thermal de Broglie wavelength Λ) leading to the crossover temperature Tcr ∝(d /Rg) 2 .

  20. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.

    PubMed

    Ou, Sin Liang; Wuu, Dong Sing; Liu, Shu Ping; Fu, Yu Chuan; Huang, Shih Cheng; Horng, Ray Hua

    2011-08-15

    In this study, indium-tin oxide (ITO)/Al-doped zinc oxide (AZO) composite films were fabricated by pulsed laser deposition and used as transparent contact layers (TCLs) in GaN-based blue light emitting diodes (LEDs). The ITO/AZO TCLs were composed of the thin ITO (50 nm) films and AZO films with various thicknesses from 200 to 1000 nm. Conventional LED with ITO (200 nm) TCL prepared by E-beam evaporation was fabricated and characterized for comparison. From the transmittance spectra, the ITO/AZO films exhibited high transparency above 90% at wavelength of 465 nm. The sheet resistance of ITO/AZO TCL decreased as the AZO thickness increased, which could be attributed to the increase in a carrier concentration, leading to a decrease in the forward bias of LED. The LEDs with ITO/AZO composite TCLs showed better light extraction as compared to LED with ITO TCL in compliance with simulation. When an injection current of 20 mA was applied, the output power for LEDs fabricated with ITO/AZO TCLs had 45%, 63%, and 71% enhancement as compared with those fabricated using ITO (200 nm) TCL for the AZO thicknesses of 200, 460, and 1000 nm, respectively.

  1. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  2. Phase control of Mn-based spinel films via pulsed laser deposition

    DOE PAGES

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; ...

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgOmore » substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.« less

  3. Characterization of amorphous carbon films grown by pulsed-laser deposition

    SciTech Connect

    Siegal, M.P.; Tallant, D.R.; Barbour, J.C.; Provencio, P.N.; Martinez-Miranda, L.J.; DiNardo, N.J.

    1998-09-01

    Amorphous carbon (a-C) films grow via energetic processes such as pulsed-laser deposition (PLD). The cold-cathode electron emission properties of a-C are promising for flat-panel display and vacuum microelectronics technologies. These ultrahard films consist of a mixture of 3-fold and 4-fold coordinated carbon atoms, resulting in an amorphous material with diamond-like properties. The authors study the structures of a-C films grown at room temperature as a function of PLD energetics using x-ray reflectivity, Raman spectroscopy, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. While an understanding of the electron emission mechanism in a-C films remains elusive, the onset of emission is typically preceded by conditioning where the material is stressed by an applied electric field. To simulate conditioning and assess its effect, the authors use the spatially-localized field and current of a scanning tunneling microscope tip. Scanning force microscopy shows that conditioning alters surface morphology and electronic structure. Spatially-resolved electron energy loss spectroscopy indicates that the predominant bonding configuration changes from predominantly 4-fold to 3-fold coordination.

  4. Bone growth on and resorption of calcium phosphate coatings obtained by pulsed laser deposition.

    PubMed

    Clèries, L; Fernández-Pradas, J M; Morenza, J L

    2000-01-01

    Three different calcium phosphate coatings of crystalline hydroxyapatite (HA), alpha- and beta-tricalcium phosphate (alpha+beta-TCP), or amorphous calcium phosphate (ACP) obtained by pulsed laser deposition on Ti-6Al-4V were incubated in a potentially osteogenic primary cell culture (rat bone marrow) in order to evaluate the amount and mode of mineralized bone matrix formation after 2 weeks with special emphasis on the type of interfacial structure that was created. Evaluation techniques included fluorescence labeling and scanning electron microscopy. The resistance to cellular resorption by osteoclasts was also studied. Bone matrix delaminated from the ACP coatings, while it remained on the HA and the alpha+beta-TCP coatings even after fracturing. A cementlike line was seen as the immediate contiguous interface with the nondegrading dense HA surface and with the surface of the remaining porous beta-TCP coating. Highly dense and crystalline HA coatings do not dissolve but are capable of establishing a strong bond with the bone matrix grown on top. Chemical and mechanical bonding were considered in this case. Cellular resorption was practically not observed on the HA coatings, but it was observed on the alpha+beta-TCP coatings. Resorption took place as dissolution that was due to the acidic microenvironment.

  5. Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO3

    DOE PAGES

    Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.; ...

    2016-11-11

    We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO3. In this study, we show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD.more » We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD “self-organizes” local step flow on a length scale consistent with the substrate temperature and PLD parameters.« less

  6. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  7. Structural and Electrical Properties of Heteroepitaxial Magnetic Oxide Junction Diode Fabricated by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Wong, K. H.

    2010-11-01

    Heteroepitaxial junctions formed by p-type strontium doped lanthanum manganite and n-type cobalt doped titanium dioxide were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. The La0.7Sr0.3MnO3 (LSMO) layers were grown at 650° C and under 150 mTorr ambient oxygen pressure. They showed room temperature ferromagnetism and metallic-like electrical conduction with a resistivity of 0.015 ohm cm at 300 K. The CoxTi1-xO2[x = 0.05 and 0.1] (CTO), which, at anatase phase, was reported as a wide-band-gap dilute magnetic semiconductor, was deposited on the LSMO film surface at 600° C with an ambient oxygen pressure of 20 mTorr. The as-grown CTO films exhibited pure anatase crystalline phase and semiconductor-like conduction. Under optimized fabrication conditions the CTO/LSMO junction revealed a heteroepitaxial relationship of (004)CTO‖‖(001)LSMO‖‖(001)LAO. Electrical characterization of these p-n junctions yielded excellent rectifying characteristics with a current rectifying ratio over 1000 at room temperature. The electrical transport across these diodes was dominated by diffusion current at low current (low bias voltage) regime and by recombination current at high current (high bias voltage) regime. Our results have demonstrated an all-oxide spintronic junction diode with good transport property. The simultaneous of electrical and magnetic modulation in a diode junction is therefore potentially realizable.

  8. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  9. Highly textured fresnoite thin films synthesized in situ by pulsed laser deposition with CO2 laser direct heating

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; de Pablos-Martin, Araceli; Patzig, Christian; Stölzel, Marko; Brachwitz, Kerstin; Hochmuth, Holger; Grundmann, Marius; Höche, Thomas

    2014-01-01

    Fresnoite Ba2TiSi2O8 (BTS) thin films were grown and crystallized in situ using pulsed laser deposition (PLD) with CO2 laser direct heating of the a-plane sapphire (1 1 0) substrates up to 1250 °C. Starting with 775 °C growth temperature, (0 0 1)- and (1 1 0)-textured BTS and BaTiO3 phases, respectively, could be assigned in the films, and the typical fern-like BTS crystallization patterns appear. For higher process temperatures of 1100 to 1250 °C, atomically smooth, terraced surface of the films was found, accompanied by crystalline high-temperature phases of Ba-Ti-Si oxides. HAADF micrographs taken in both scanning transmission electron microscopy and energy-dispersive x-ray spectrometry mode show details of morphology and elemental distribution inside the films and at the interface. To balance the inherent Si deficiency of the BTS films, growth from glassy BTS × 2 SiO2 and BTS × 2.5 SiO2 targets was considered as well. The latter targets are ideal for PLD since the employed glasses possess 100% of the theoretical density and are homogeneous at the atomic scale.

  10. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vanderford, John D.

    Transparent conducting oxides have become a fundamental electronic material for numerous current technologies and are optimally deposited as a uniform thin film with low electrical resistivity and high optical transmission. The purpose of this study is to characterize the electrical and optical characteristics of three TCO: Indium Tin Oxide (ITO) (95%, 5%), Zinc Oxide (ZnO), and Aluminum doped Zinc Oxide (AZO) (98%, 2%). The deposition techniques of neutralized ion beam sputtering and pulsed laser deposition will be investigated. ITO will be deposited from commercially available sintered targets whereas ZnO and AZO will be deposited from powder pressed targets. The results have shown that AZO deposit AZO from a powder pressed target with comparable electrical and optical properties to that of ITO deposited from a sintered target.

  11. Pulsed-laser deposition and characterization of hetero-paired thin-film gallium arsenide

    NASA Astrophysics Data System (ADS)

    Erlacher, Artur

    2005-07-01

    The III-V compound semiconductor gallium arsenide (GaAs) possesses a direct bandgap and a six-fold higher electron mobility than the indirect semiconductor silicon (Si). For that reason GaAs based devices are of particular significance for high-speed digital (mobile phones, radar systems, all-optical switches, etc.) and high-performance optoelectronic applications (high-efficiency solar cells, high-power IR laser diodes, etc.). The state-of-the-art GaAs device production is mainly covered by rather sophisticated and expensive techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). This project investigated pulsed-laser deposition (PLD) as a cost effective alternative method to grow thin-film GaAs. In addition, detailed data of electronic and optoelectronic properties of GaAs/Si hetero-structures were obtained. During this dissertation about 110 GaAs thin films have been formed on glass and Si substrates by PLD with different process parameters. The crystal structure and surface properties of the thin films have been analyzed by x-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Electronic and optoelectronic features of GaAs/Si hetero-structures have been investigated by current-voltage (I-V) characterization and photocurrent (PC) experiments. In addition, theoretical models describing the ablation temperature and the deposited film profile are presented. The experimental results reveal that the sample textures consist of a predominate amorphous portion and (111) oriented crystallites. Furthermore, these features are widely independent of the laser ablation wavelength and do not depend on the substrate surface texture. However, the ablation wavelength influences and varies the formation of clusters on the film surfaces as demonstrated with AFM. Doped GaAs thin films deposited on counter-doped Si substrates exhibit rectifying I-V characteristics. The spectral response data shows that the Ga

  12. Optical Characterization of Pulse Laser Deposition of Thin Film of Hard Materials Using RHEED and AFM Techniques (DURIP)

    DTIC Science & Technology

    2011-09-26

    Ferrite (BaFeO3) have been fabricated by the pulsed laser deposition technique on a Si substrate. The magnetic parameters were measured using vibrating...presented. 1. INTRODUCTION Barium ferrite powder was selected in this study because of its suitable coercive force (HC) and large remnant...was studied in the case of six fine- powder samples of barium ferrite . Then the selected BaFeO3 materials were used to produce a doped PLD thin film

  13. Optical Characterization of Pulse Laser Deposition of Thin Films of Hard Materials Using RHEED and AFM Techniques

    DTIC Science & Technology

    2011-12-20

    University, New Orleans, LA 70122 ABSTRACT Epitaxial thin films of Barium Ferrite (BaFeO3) have been fabricated by the pulsed laser deposition...the Coercivity, crystalline orientation, and grain shape and size is presented. 1. INTRODUCTION Barium ferrite powder was selected in this...published. In the presently conducted investigation, FMR absorption was studied in the case of six fine- powder samples of barium ferrite

  14. Rietveld X-ray diffraction analysis of nanostructured rutile films of titania prepared by pulsed laser deposition

    SciTech Connect

    Murugesan, S.; Kuppusami, P.; Mohandas, E.

    2010-01-15

    Rietveld powder X-ray diffraction analysis of the rutile films of titanium oxide prepared by pulsed laser deposition was carried out. The crystallite size increased with increase of substrate temperature, while the strain showed a reverse trend. The films synthesized at temperature {>=}573 K showed that the crystal structure was almost close to that of bulk rutile structure. The influence of the substrate temperature on the lattice parameters and oxygen coordinates were also studied in the present work.

  15. A nucleation and growth model of silicon nanoparticles produced by pulsed laser deposition via Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Wang, Yinglong; Qin, Aili; Chu, Lizhi; Deng, Zechao; Ding, Xuecheng; Guan, Li

    2017-02-01

    We simulated the nucleation and growth of Si nanoparticles produced by pulse laser deposition using Monte Carlo method at the molecular (microscopic) level. In the model, the mechanism and thermodynamic conditions of nucleation and growth of Si nanoparticles were described. In a real physical scale of target-substrate configuration, the model was used to analyze the average size distribution of Si nanoparticles in argon ambient gas and the calculated results are in agreement with the experimental results.

  16. Pulsed Laser Deposition of Thin Films for Lasers and Quasi-Phase Matched Devices

    DTIC Science & Technology

    2013-01-16

    Optics , waveguides, Lasers 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18, NUMBER OF PAGES 11 19a. NAME OF...and AFRL, concerning PLD research  in general. The  offer has been made  for a current student to visit ARFL, and  interact over  multibeam  PLD

  17. Structure property relationships of nitride superlattice hard coatings prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Patel, Nitin

    Today, more than 40% of all cutting tools used in machining applications are covered with coatings. Coatings improve wear resistance, increase tool life, enable use at higher speed, and broaden the application range. Superlattices, where thin layers (typically <10 nm) of two different materials (e.g. TiN and AlN) are deposited in an alternating fashion, are widely used commercially. Importantly, the hardness value of a superlattice (e.g. TiN/AlN) can significantly exceed the rule of mixture value. Superlattice coatings built from crystallographically dissimilar materials are not widely studied but hold promise for improvements in performance by allowing for both hardness and toughness to be simultaneously optimized. This is what this thesis is concerned with: a structure-property comparison of isostructural superlattices with corresponding non-isostructural superlattices. In order to grow both isostructural and non-isostructural superlattices from the same set of materials, it is necessary to grow monolithic films in different phases. Towards this end, the synthesis of different phases of AlN, (Ti,Al)N, TaN, and TiN was investigated. Films were grown by pulsed laser deposition in two different chambers that had different base pressures to study the effect of background gases on the phases and orientations of the films. Growth of AlN and (Ti,Al)N films is strongly affected in a chamber that had a base pressure of 10-6 Torr, but the films adopt their stable nitride structures in a chamber with the lower base pressure of 10-8 Torr. TaN adopts either the cubic rock salt structure or its stable hexagonal structure, depending on the growth temperature, while TiN grows as rock salt in all conditions. Single crystal epitaxial superlattices were then grown with different compositions, periodicities, and crystallographic orientations to compare the effect of chemistry, nanostructure, and crystallographic texture on hardness. Finally, the structure-property relationships of

  18. Fabrication and properties of plasmonic crystalline thin film of titanium nitride (TiN) by pulsed laser deposition with Nd:YAG laser at 355 nm

    NASA Astrophysics Data System (ADS)

    Oshikane, Yasushi

    2016-09-01

    For efficient plasmonic MIM structures in fabrication of optical nano-probe tip for scanning near-field microscope (SNOM), an experimental study of thin film fabrication of titanium nitride (TiN) has been started by pulsed laser deposition (PLD) with 3rd harmonic (355nm) pulses of high-power Nd:YAG laser. Inside a TMP-pumped UHV chamber, a TiN powder sintered body has been irradiated with the UV laser pulses (3.3 nsFWHM, 10Hz, up to 340mJ/ pulse on target) at different intensities and incident angles. The deposited films on glass slide or silicon wafer has been analyzed by X-ray diffractometer (XRD), UV-Vis spectrophotometer, scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS). Previously-reported PLD fabrication experiments for TiN film used a titanium (Ti) target with several gas species including nitrogen. The laser-produced Ti plasma with an appropriate condition had a chemical reaction with nitrogen molecules, and the resultant TiN film was deposited on a substrate. While on the other hand, this study has significant features of (1) PLD target made of crystalline powder sintered body and (2) UV laser pulses having temporally-smoothed gaussian profile by injection-seeding of IR laser diode beam. The very first trial depositions have succeeded to fabricate flat and dense films of a few hundred nm, which were partly covered with debris and cracks. The resultant XRD pattern of film having luster of gold indicated several peaks including 42.6° (200) and 61.8° (220) which correspond to crystal structure of TiN. The electron configuration in the PLDed TiN film is studied using XPS.

  19. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Smith, David J.; Ding, Ding; Lu, Xianfeng; Zhang, Yong-Hang

    2011-04-01

    Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

  20. Pulsed laser deposition of PbTe under monopulse and multipulse regime

    NASA Astrophysics Data System (ADS)

    Alvira, F. C.; Cabrera, L. Ponce; Peñaloza Mendoza, Y.; Martinez Ricci, M. L.; Videla, F.

    2017-03-01

    The aim of this paper is to compare PLD technique with monopulse and multipulse nanosecond laser excitation. We show the feasibility of depositing nanometric layers of PbTe employing the regimes already mentioned. Each of the grown layers were characterized by XRD, EDXS, SEM, Spectroscopic Elipsometry, AFM and the thickness was measured by mechanic profilometry. We have conducted comparative experiments to show the advantages and drawbacks of making PLD with mono and multipulse nanosecond laser.

  1. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    SciTech Connect

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-08-01

    Thin films of Cu2Sb, prepared on stainless steel and copper substrates with a pulsed laser deposition technique at room temperature, have been evaluated as electrodes in lithium cells. The electrodes operate by a lithium insertion/copper extrusion reaction mechanism, the reversibility of which is superior when copper substrates are used, particularly when electrochemical cycling is restricted to the voltage range 0.65-1.4 V vs. Li/Li+. The superior performance of Cu2Sb films on copper is attributed to the more active participation of the extruded copper in the functioning of the electrode. The continual and extensive extrusion of copper on cycling the cells leads to the isolation of Li3Sb particles and a consequent formation of Sb. Improved cycling stability of both types of electrodes was obtained when cells were cycled between 0.65 and 1.4 V. A low-capacity lithium-ion cell with Cu2Sb and LiNi0.8Co0.15Al0.05O2 electrodes, laminated from powders, shows excellent cycling stability over the voltage range 3.15 - 2.2 V, the potential difference corresponding to approximately 0.65-1.4 V for the Cu2Sb electrode vs. Li/Li+. Chemical self-discharge of lithiated Cu2Sb electrodes by reaction with the electrolyte was severe when cells were allowed to relax on open circuit after reaching a lower voltage limit of 0.1 V. The solid electrolyte interphase (SEI) layer formed on Cu2Sb electrodes after cells had been cycled between 1.4 and 0.65 V vs. Li/Li+ was characterized by Fourier-transform infrared spectroscopy; the SEI layer contributes to the large irreversible capacity loss on the initial cycle of these cells. The data contribute to a better understanding of the electrochemical behavior of intermetallic electrodes in rechargeable lithium batteries.

  2. Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets

    NASA Astrophysics Data System (ADS)

    Inoue, Takeshi; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2015-11-01

    Epitaxial growth of SnSe was studied using pulsed laser deposition on three kinds of single-crystalline substrates, MgO (100), NaCl (100), and SrF2 (100), along with silica glass. For polycrystalline SnSe grown on glass, we found that a 20% Se-rich polycrystalline target is effective for obtaining stoichiometric SnSe films. The crystal structure of all the obtained films was the same as that of bulk SnSe, and the optimum temperatures for epitaxial growth were 400-500 °C, where the highest temperature was limited by re-evaporation. All the epitaxial films exhibited an a-axis orientation. For in-plane epitaxial structures, a quasi cube-on-cube heteroepitaxy was observed for MgO, whereas a 45°-rotated heteroepitaxy was observed for NaCl and SrF2, which can be explained by in-plane lattice matching. The anisotropic lattice mismatching and thermal expansion explain the compressive strain induced along the in-plane c-axis and the tensile strains along the in-plane b-axis and the out-of-plane a-axis. The epitaxial films on NaCl exhibited the best crystallinity, but the highest hole mobility of 60 cm2/(V s) was obtained on MgO. The indirect optical gap of the best films was determined to be 0.8 eV. Plausible interface models were proposed based on density functional calculations.

  3. Investigation of NbNx thin films and nanoparticles grown by pulsed laser deposition and thermal diffusion

    NASA Astrophysics Data System (ADS)

    Hassan Farha, Ashraf

    Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (lambda = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films. When the fabrication parameters are fixed, except for laser fluence, surface roughness, deposition rate, nitrogen content, and grain size increases with increasing laser fluence. Increasing nitrogen background pressure leads to change in the phase structure of the NbNx films from mixed -Nb 2N and cubic delta-NbN phases to single hexagonal beta- Nb 2N. A change in substrate temperature led to a pronounced change in the preferred orientation of the crystal structure, the phase transformation, surface roughness, and composition of the films. The structural, electronic, and nanomechanical properties of niobium nitride PLD deposited at different nitrogen pressures (26.7-66.7 Pa) on Si(100) were investigated. The NbNx, films exhibited a cubic delta-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The highly-textured delta-NbN films have a Tc up to 15.07 K. The film was deposited at a nitrogen background pressure of 66.7 Pa exhibited improved superconducting properties and showed higher hardness values as compared to films deposited at lower nitrogen pressures. NbN nanoclusters that were deposited on carbon coated Cu-grids using PLD at laser fluence of 8 J/cm2 were observed. Niobium nitride is prepared by heating of Nb sample in a reactive nitrogen atmosphere (133 Pa

  4. Investigation of variation of energy of laser beam on structural, electrical and optical properties of pulsed laser deposited CuO thin films

    SciTech Connect

    Dahiya, V. Kumar, A.; Kaur, G.; Mitra, A.

    2014-04-24

    In this paper, copper oxide (CuO) thin films have been deposited successfully by pulsed laser deposition technique using copper metal as target material. Thin films have been prepared under different energy of laser pulses ranging from 100mJ/pulse to 250 mJ/pulse. These films have been characterized for their structural, electrical and optical properties by using X-Ray Diffractometer (XRD), Four probe method and UV spectroscopy. Morphological and structural studies show that there is increase in crystallite size with the increase in energy of laser beam. Thus resulting in improved crystallinity and degree of orientation of the CuO thin films. Optoelectrical properties show direct relation between conductivity and energy of laser beam. Optical analysis of CuO thin films prepared under different energy of laser beam shows good agreement with structural analysis. The prepared CuO thin films show high absorbance in the UV and visible range and thus are suitable candidate for thin films solar cell application.

  5. Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tabbal, M.; Mérel, P.; Chaker, M.

    We present an investigation of the effect of the process parameters, namely deposition pressure and laser intensity, on the growth and mechanical properties of carbon nitride (CNx) thin films synthesized by plasma assisted pulsed laser deposition. Deposition at high remote plasma pressure (200 mTorr) enhances both growth rate and nitrogen incorporation (up to 40 at.%), but nano-indentation measurements indicate that these films are very soft and have poor mechanical properties. At low remote plasma pressure (0.5 mTorr), the nitrogen content varies from 24 to 16 at.% with increasing laser intensity as the films become much harder and more elastic, with hardness and Young's modulus values reaching 24 GPa and 230 GPa, respectively. These effects are explained in terms of a thermalization of the laser plasma at 200 mTorr and indicate that plasma activation of nitrogen does not provide any particular benefit to the film properties when deposition is performed at high pressure. However, at low pressure, the benefit of plasma activation is evidenced through enhanced nitrogen incorporation in the films while preserving the highly energetic species in the ablation plume. Such conditions lead to the synthesis, at room temperature, of hard and elastic films having properties close to those of fullerene-like CNx.

  6. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-02

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

  7. Catalyst-free ZnO nanowires on silicon by pulsed laser deposition with tunable density and aspect ratio

    NASA Astrophysics Data System (ADS)

    Susner, M. A.; Carnevale, S. D.; Kent, T. F.; Gerber, L. M.; Phillips, P. J.; Sumption, M. D.; Myers, R. C.

    2014-08-01

    ZnO nanostructures were grown on Si(1 1 1) via pulsed laser deposition. The morphology of the ZnO was tunable based on the pressure of the atmosphere during deposition: deposition in vacuum produced a thin film, deposition at intermediate pressures (75 mTorr) yielded nanoclusters of ZnO and deposition at higher pressures (>250 mTorr) produced c-axis oriented nanowires. Through variation of the deposition temperature and pressure it was possible to control the nanowire density, height, and diameter. Room temperature photoluminescence spectroscopy reveals exciton to defect peak ratios greater than 100 suggesting much greater stoichiometry and reduced defect density than found in catalyst-formed ZnO nanowires. The evolution of the ZnO nanowire growth was examined through X-ray diffraction and electron microscopy. Using a two-step deposition procedure involving depositing a seed layer at a low temperature with further deposition at a higher temperature we were able to increase the height of the nanowires without increasing the diameter. These two-step structures were seen to come in two morphological forms - ZnO needles and porous, nested ZnO nanostructures.

  8. Structure-Property Relationships in W Doped (Ba,Sr)TiO(3) Thin Films Deposited by Pulsed Laser Deposition on (001) MgO

    DTIC Science & Technology

    2003-04-03

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013347 TITLE: Structure-Property Relationships in W Doped [Ba,Sr]TiO[3... Doped (Ba,Sr)TiO 3 Thin Films Deposited by Pulsed Laser Deposition on (001) MgO N. Navi1’*, J.S. Horwitz, H.-D. Wu2 and S.B. Qadri, Naval Research...oscillators, delay lines and phase shifters [1]. These devices will reduce the size and the operating power of the current semiconducting and ferrite based

  9. Effect of ablation parameters on infrared pulsed laser deposition of poly(ethylene glycol) films

    NASA Astrophysics Data System (ADS)

    Bubb, Daniel M.; Papantonakis, M. R.; Toftmann, B.; Horwitz, J. S.; McGill, R. A.; Chrisey, D. B.; Haglund, R. F., Jr.

    2002-06-01

    Polymer thin films were deposited by laser ablation using infrared radiation both resonant (2.90, 3.40, 3.45, and 8.96 mum) and nonresonant (3.30, 3.92, and 4.17 mum) with vibrational modes in the starting material, polyethylene glycol. The chemical structure of the films was characterized by Fourier transform infrared spectroscopy, while the molecular weight distribution was investigated using gel permeation chromatography. The films deposited by resonant irradiation are superior to those deposited with nonresonant radiation with respect to both the chemical structure and the molecular weight distribution of the films. However, the molecular-weight distributions of films deposited at nonresonant infrared wavelengths show marked polymer fragmentation. Fluence and wavelength dependence studies show that the effects may be related to the degree of thermal confinement, and hence to the relative absorption strengths of the targeted vibrational modes.

  10. Moderation of near-field pressure over a supersonic flight model using laser-pulse energy deposition

    NASA Astrophysics Data System (ADS)

    Furukawa, D.; Aoki, Y.; Iwakawa, A.; Sasoh, A.

    2016-05-01

    The impact of a thermal bubble produced by energy deposition on the near-field pressure over a Mach 1.7 free-flight model was experimentally investigated using an aeroballistic range. A laser pulse from a transversely excited atmospheric (TEA) CO2 laser was sent into a test chamber with 68 kPa ambient pressure, focused 10 mm below the flight path of a conically nosed cylinder with a diameter of 10 mm. The pressure history, which was measured 150 mm below the flight path along the acoustic ray past the bubble, exhibited precursory pressure rise and round-off peak pressure, thereby demonstrating the proof-of-concept of sonic boom alleviation using energy deposition.

  11. Synthesis of carbon films using pulsed laser deposition method with frozen CH 4 and CO 2 targets

    NASA Astrophysics Data System (ADS)

    Ishiguro, Takashi; Esaki, Kotaro; Hiroshima, Yasushi

    1998-05-01

    A novel pulsed laser deposition (PLD) process with frozen CH 4 and/or CO 2 is developed. Frozen CH 4 and/or CO 2 formed on the graphitic carbon (GC) target at 12 K, then co-ablated with the GC target, using a KrF excimer laser. The present method is effective in enhancing the dissociation of raw materials and suppressing the large splashing particles. The characteristics of the deposited carbon films depend on the target material and on the substrate temperature. Under the proper conditions, the films show the characteristics of diamond-like carbon in the Raman spectrum. According to the high resolution transmission electron microscopy, these films contain nanometer-sized diamond embryos.

  12. Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Vyas, Sumit; Giri, Pushpa; Singh, Shaivalini; Chakrabarti, P.

    2015-10-01

    Zinc oxide (ZnO) thin films have been deposited on Si substrate and glass substrate using thermal evaporation, pulsed laser deposition (PLD) and radio-frequency (RF) sputtering methods. The structural, surface morphological, optical and electrical properties of ZnO thin films deposited by these three methods were investigated and compared systematically using x-ray diffractometer, atomic force microscopy, ellipsometric and current-voltage ( I- V) measurement. The ZnO films deposited by RF sputtering method were highly oriented along the (002) plane. The ZnO films grown by thermal evaporation and PLD methods exhibited a polycrystalline nature. The surface roughness was found to be the least and the transparency in the visible region was the highest for the films grown by the RF sputtering method as compared to the films grown by the other two methods. The I- V characteristics reveal that the Pd:Au/ZnO (RF-sputtered) Schottky contact exhibited a better value of ideality factor, series resistance and barrier height as compared to the values obtained for Pd:Au/ZnO (thermally evaporated and pulse laser-deposited) Schottky contacts. The optical bandgap was found to be almost the same for the films grown by all three methods and was estimated to be around 3.2 eV.

  13. Pulsed laser ablation and deposition of bioactive glass as coating material for biomedical applications

    NASA Astrophysics Data System (ADS)

    D'Alessio, L.; Teghil, R.; Zaccagnino, M.; Zaccardo, I.; Ferro, D.; Marotta, V.

    1999-01-01

    A study of the laser ablation and deposition, on Ti-Al substrates, of a biologically active glass (Bioglass®) suitable for bone implants is reported. The analysis of the gaseous phase by emission spectroscopy and the characterisation of the films from a compositional and morphological point of view have been carried out. The mean chemical composition of the deposits obtained from Bioglass ablation is very close to the target composition and the morphology indicates that different mechanisms of material ejection are present.

  14. Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

    NASA Astrophysics Data System (ADS)

    Kim, Se Jin

    Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

  15. Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

    2013-07-01

    Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

  16. Growth of poly-crystalline Cu films on Y substrates by picosecond pulsed laser deposition for photocathode applications

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Klini, A.; Manousaki, A.; Perrone, A.; Fotakis, C.

    2015-11-01

    In this work, the deposition of Cu thin films on Y substrates for photocathode applications by pulsed laser deposition employing picosecond laser pulses is reported and compared with the use of nanosecond pulses. The influence of power density (6-50 GW/cm2) on the ablation of the target material, as well as on the properties of the resulting film, is discussed. The material transfer from the target to the substrate surface was found to be rather efficient, in comparison to nanosecond ablation, leading to the growth of films with high thickness. Scanning electron microscope analysis indicated a quasi-continuous film morphology, at low power density values, becoming granular with increasing power density. The structural investigation, through X-ray diffraction, revealed the poly-crystalline nature of the films, with a preferential growth along the (111) crystallographic orientation of Cu cubic network. Finally, energy-dispersive X-ray spectroscopy showed a low contamination level of the grown films, demonstrating the potential of a PLD technique for the fabrication of Cu/Y patterned structures, with applications in radiofrequency electron gun technology.

  17. Structural and electrochemical properties of W-Se-O layers prepared by pulsed laser pre-deposition and thermal posttreatment

    NASA Astrophysics Data System (ADS)

    Soloviev, A. A.; Grigoriev, S. N.; Fominski, D. V.; Volosova, M. A.; Romanov, R. I.

    2016-09-01

    Novel nanostructured thin-film coatings containing WSe2 and WO3 nanosheets were prepared through a simple and highly reproducible method. Pulsed laser pre-deposition of W- Se-O films on a microcrystalline graphite substrate by ablation of WSe2 target in a mixture of Ar and O2 gases was followed by thermal post-treatment. The influence of pre-deposition and post-treatment conditions on the structure, morphology and chemical composition of the W-Se- O films was studied. Thermal annealing at appropriate conditions of pre-deposited amorphous W-Se-O films resulted in the formation of crystalline structure consisted of nanocrystals of WSe2 and WO3 phases. Such structural modification significantly altered the electrochemical properties of the thin-film coatings with consequences, in particular, on their catalytic activity toward hydrogen evolution reaction in an acid solution.

  18. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Majid, S. S.; Shukla, D. K.; Rahman, F.; Choudhary, R. J.; Phase, D. M.

    2015-06-01

    We present here the structural and electrical properties of the thin films of V2O3 (Vanadium sesquioxide) and V5O9. Both these oxide phases, V2O3 and V5O9, have beenachieved on (001) orientedSi substrate using the V2O5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V2O3 and V5O9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V2O3 and V5O9.

  19. Pulsed laser deposition and ferroelectric characterization of nanostructured perovskite lead zirconate titanate (52/48) thin films.

    PubMed

    Prabu, M; Banu, I B Shameem; Vijayaraghavan, G V; Gobalakrishnan, S; Chavali, Murthy

    2013-03-01

    Perovskite lead zirconate titanate nanostructured (PZT) thin films with Zr/Ti ratio of 52/48 were deposited on Pt/TiO2/SiO2/Si(100) substrate using pulsed laser deposition method. A metal/ ferroelectric/metal (MFM) structure was used for ferroelectric property measurements, formed by depositing gold electrode on top of the film. A Nd:YAG UV laser having a wavelength of 355 nm and an energy fluence of -2.7 J/cm2 was used to deposit the film. The film was deposited on platinum (Pt) coated silicon substrate at the substrate temperature of 600 degrees C and the base vacuum of 10(-6) mbar. The scanning electron microscopy (SEM) images revealed well-crystallized films with a fine microstructure and an average grain size of - 50 nm. The ferroelectric properties of the film were studied and the results were discussed. The voltage dependent Polarization versus Electric field hysteresis measurements of PZT (52/48) pellet showed a well-defined hysteresis loop with a fairly high remnant polarization (P(r)) and low coercive field (E(c)).

  20. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  1. Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass

    NASA Astrophysics Data System (ADS)

    Erlacher, A.; Ambrico, M.; Perna, G.; Schiavulli, L.; Ligonzo, T.; Jaeger, H.; Ullrich, B.

    2005-07-01

    Pulsed-laser deposition (PLD) of ZnTe was performed at λpld = 1064 nm and λpld = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness ≈2 μm) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed at λpld = 532 nm is amorphous, whereas the one ablated at λpld = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV.

  2. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  3. Low Temperature, Self-nucleated Growth of Indium Tin Oxide Nanostructures by Pulsed Laser Deposition in Argon

    SciTech Connect

    Tan, S. S.; Lee, W. K.; Kee, Y. Y.; Wong, H. Y.; Tou, T. Y.

    2011-03-30

    Indium tin oxide (ITO) nanostructures were successfully deposited on glass substrate by pulsed laser ablation in argon gas at 250 deg. C. Microstructural changes were observed in the argon gas pressure between 30 to 50 mTorr. The as-grown, nanostructured ITO exhibit In{sub 2}O{sub 3} bixbyite structure orientated at <111> direction. At the initial stage of growth, there was a large number of nucleation sites detected which eventually evolved into needle-like branches. The presence of spheres at the tip of these branches indicates that these nanostructured ITO were likely governed by vapor-liquid-solid (VLS) growth mechanism.

  4. Critical factor for epitaxial growth of cobalt-doped BaFe{sub 2}As{sub 2} films by pulsed laser deposition

    SciTech Connect

    Hiramatsu, Hidenori Kamiya, Toshio; Sato, Hikaru; Katase, Takayoshi; Hosono, Hideo

    2014-04-28

    We heteroepitaxially grew cobalt-doped BaFe{sub 2}As{sub 2} films on (La,Sr)(Al,Ta)O{sub 3} single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm{sup 2} irrespective of the laser wavelength.

  5. Humidity sensors applicative characteristics of granularized and porous Bi2O3 thin films prepared by oxygen plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tudorache, Florin; Petrila, Iulian; Condurache-Bota, Simona; Constantinescu, Catalin; Praisler, Mirela

    2015-01-01

    Pulsed laser ablation of pure bismuth targets in a plasma discharge followed by thermal treatment as preparation method for humidity high-sensitive bismuth trioxide thin films deposited onto Si/Pt substrates were analyzed. Several thin films were deposited at different substrate temperatures during the pulsed laser deposition namely between 300 °C and 600 °C. Near to the electrical investigation, the structure and the morphology of the films as keys features for water adsorption are thoroughly investigated and correlated with their sensitivity as humidity sensors. Thus, it has been found that strong granularized Bi2O3 thin films obtained through oxygen plasma-assisted pulsed laser deposition onto Si/Pt substrate at 500 °C provide the most interesting humidity sensing characteristics.

  6. Variable temperature photoluminescence of pulsed laser deposited ZnO thin films

    NASA Astrophysics Data System (ADS)

    Cui, J. B.; Soo, Y. C.; Thomas, A.; Kandel, H.; Chen, T. P.; Daghlian, C. P.

    2008-08-01

    Variable temperature photoluminescence of ZnO thin films deposited by a reactive laser ablation of metallic zinc was investigated. Free and bound exciton emissions are absent at cryogenic temperature, and the near band edge (NBE) emission is independent of measurement temperature for the ZnO thin film deposited at room temperature. Annealing at 700 °C results in the removal of defects, reappearance of exciton emission, and a temperature dependent NBE emission. The experimental data suggest that defects play an important role in the band edge emission in terms of both spectra shape and temperature dependence. Our observations will have an impact on device applications using ZnO, especially for optoelectronics that utilizes the exciton emission.

  7. Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

    SciTech Connect

    Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh

    2015-05-01

    We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

  8. Structure and composition of layers of Ni-Co-Mn-In Heusler alloys obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wisz, Grzegorz; Sagan, Piotr; Stefaniuk, Ireneusz; Cieniek, Bogumil; Maziarz, Wojciech; Kuzma, Marian

    2016-12-01

    In present work we were analysing thin layers of Ni-Co-Mn-In alloys, grown by pulsed laser deposition method (PLD) on Si, NaCl and glass substrates. For target ablation the second harmonics of YAG:Nd3+ laser was used. The target had the composition Ni45Co5Mn34.5In14.5. The morphology of the layers and composition were studied by electron microscopy TESCAN Vega3 equipped with microanalyzer EDS - Easy EdX system working with Esprit Bruker software. The X-ray diffraction measurements (XRD), performed on spectrometer Bruker XRD D8 Advance system, reveals Ni2-Mn-In cubic phase having lattice constant a = 6.02Å.

  9. Spatially-offset double-pulse laser-induced breakdown spectroscopy: A novel technique for analysis of thin deposited layers

    NASA Astrophysics Data System (ADS)

    Nishijima, D.; Hollmann, E. M.; Doerner, R. P.

    2016-10-01

    A novel technique, spatially-offset double-pulse laser-induced breakdown spectroscopy (SODP-LIBS), is invented for analysis of thin layers. In this technique, two laser spots are spatially offset by a few mm, while there is no spatial gap for the standard collinear DP-LIBS. It is demonstrated from analysis of thin W layers (∼30-250 nm thickness) deposited on Mo substrates at a reduced ambient pressure of ∼ 5 × 10-3 Torr that (1) the W I signal intensity is enhanced with SODP-LIBS and (2) a clearer transition between W and Mo is obtained with SODP-LIBS, compared to the standard DP-LIBS.

  10. Large third-order optical nonlinearities in iron oxide thin films synthesized by reactive pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mulenko, S. A.; Rudenko, V. I.; Liakhovetskyi, V. R.; Brodin, A. M.; Stefan, N.

    2016-10-01

    We report on a study of the third-order nonlinear optical properties of Fe2O3 thin films, grown by the method of laser deposition on silica (SiO2) substrates. The films were synthesized on substrates at different temperatures (293 K and 800 K) and under different oxygen pressures (0.1 Pa, 0.5 Pa, 1.0 Pa). The resulting films were amorphous, if grown on cold substrates (293 K), or polycrystalline otherwise. The third-order optical susceptibility χ(3) of the films was determined by the Z-scan method at the wavelengths of 1064 nm and 532 nm and the laser pulse width of 20 ns. Remarkably high χ(3) values on the order of 10-4 esu at 1064 nm are obtained. The results show that Fe2O3 thin films are promising nonlinear materials for contemporary optoelectronics.

  11. Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

    Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

  12. Low temperature synthesis of hierarchical TiO2 nanostructures for high performance perovskite solar cells by pulsed laser deposition.

    PubMed

    Yang, Bin; Mahjouri-Samani, Masoud; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2016-10-21

    A promising way to advance perovskite solar cells is to improve the quality of the electron transport material -e.g., titanium dioxide (TiO2) - in a direction that increases electron transport and extraction. Although dense TiO2 films are easily grown in solution, efficient electron extraction suffers due to a lack of interfacial contact area with the perovskites. Conversely, mesoporous films do offer high surface-area-to-volume ratios, thereby promoting efficient electron extraction, but their morphology is relatively difficult to control via conventional solution synthesis methods. Here, a pulsed laser deposition method was used to assemble TiO2 nanoparticles into TiO2 hierarchical architectures exhibiting an anatase crystal structure, and prototype solar cells employing these structures yielded power conversion efficiencies of ∼14%. Our approach demonstrates a way to grow high aspect-ratio TiO2 nanostructures for improved interfacial contact between TiO2 and perovskite materials, leading to high electron-hole pair separation and electron extraction efficiencies for superior photovoltaic performance. Compared to previous pulsed laser deposition-synthesized TiO2 mesoporous crystalline networks that needed post-thermal annealing at 500 °C to form mesoporous crystalline networks, our relatively low temperature (300 °C) TiO2 processing method may promote reduced energy-consumption during device fabrication, as well as enable compatibility with flexible polymer substrates such as polyimide.

  13. Induced magnetic anisotropy and spin polarization in pulsed laser-deposited Co2MnSb thin films

    NASA Astrophysics Data System (ADS)

    Paudel, Moti R.; Wolfe, Christopher S.; Pathak, Arjun K.; Dubenko, Igor; Ali, Naushad; Osofsky, M. S.; Prestigiacomo, Joseph C.; Stadler, Shane

    2012-01-01

    Co2MnSb thin films were grown on glass and GaAs (001) substrates using pulsed laser deposition. The films were grown in magnetic fields (HG = 500 Oe and 0 Oe) that were applied in the plane of the substrate during the deposition process. Angle-dependent magneto-optic Kerr effect measurements for films grown on glass revealed a uniaxial magnetic anisotropy in the direction of the applied growth field. Films grown on GaAs (001) exhibited more complicated magnetic anisotropy behavior, due to additional contributions from the substrate. Point contact Andreév reflection spectroscopy measurements indicated that the spin polarizations of the films were about P ˜ 50%, with negligible difference between films grown in zero and non-zero applied fields.

  14. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cui, J. B.; Thomas, M. A.; Soo, Y. C.; Kandel, H.; Chen, T. P.

    2009-08-01

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O2 and N2. The presence of N2 during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N2 concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N2 concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  15. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  16. Effect of oxygen content on piezoresistivity of indium tin oxide thin films prepared by pulsed laser deposition

    SciTech Connect

    Fang, H.; Miller, T.; Rogers, B.R.; Magruder, R.H. III; Weller, R.A.

    2005-04-15

    The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of the O-to-(In+Sn) atom ratio. The oxygen-to-metal atom ratio was determined through Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses. Gauge factors, defined as the fractional change of the film resistance to the applied strain, increase with the film's oxygen content. The deposition under 50 mTorr oxygen pressure resulted in the film with the largest oxygen-to-metal atom ratio, 1.92, and a gauge factor of -14.5. A model based on hopping conduction is proposed. Results from this model are consistent with the sign and magnitude of the observed gauge factors.

  17. An experimental investigation of localised surface plasmon resonance (LSPR) for Cu nanoparticles depending as a function of laser pulse number in Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Gezgin, Serap Yiǧit; Kepceoǧlu, Abdullah; Kılıç, Hamdi Şükür

    2017-02-01

    Copper is a low cost metal and its nanoparticles have a unique optical properties such as LSPR. The location of LSPR wavelength can be tuned by controlling nanoparticles sizes and size distributions of nanoparticles, shapes and interparticle distances. This morphological changes are provided by controlling system parameters in PLD. For this work, 48000 and 36000 laser pulses from Nd:YAG laser were applied to produce Cu nanoparticle thin films. These thin films were characterised by performing UV-VIS absorption spectroscopy, Atomic Force Microscopy (AFM) analysis. When the number of laser pulse decreases, the size of Cu nanoparticles and the number of nanoparticles arriving on the substrate are reduced, and LSPR peak of thin films are red shifted depending on the geometrical shapes of the Cu nanoparticles. We have driven a conclusion in this work that LSPR properties of Cu nanoparticles can be tuned by proposed method.

  18. In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

    NASA Technical Reports Server (NTRS)

    Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

    2004-01-01

    The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

  19. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region.

    PubMed

    Fang, Xu; Mak, C L; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-08

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  20. Pulsed IR inductive lasers

    NASA Astrophysics Data System (ADS)

    Razhev, A. M.; Churkin, D. S.; Kargapol'tsev, E. S.

    2014-07-01

    Pulsed inductive discharge is a new alternative method of pumping active gas laser media. The work presents results of experimental investigations of near, mid, and far IR inductive gas lasers (H2, HF, and CO2) operating at different transitions of atoms and molecules with different mechanisms of formation of inversion population. The excitation systems of a pulsed inductive cylindrical discharge (pulsed inductively coupled plasma) and pulsed RF inductive discharge in the gases are developed. Various gas mixtures including H2, N2, He, Ne, F2, NF3, and SF6 are used. Characteristics of near IR H2 laser radiation are investigated. Maximal pulse peak power of 7 kW is achieved. The possibility of using a pulsed inductive discharge as a new method of pumping HF laser active medium is demonstrated. The pulsed RF inductive CO2 laser is created and a total efficiency of 17% is achieved.

  1. Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Virt, I. S.; Rudyi, I. O.; Lopatynskyi, I. Ye.; Dubov, Yu.; Tur, Y.; Lusakowska, E.; Luka, G.

    2017-01-01

    Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

  2. Industrially scaled pulsed laser deposition based coating techniques for the realization of hemocompatible surfaces for blood contact applications

    NASA Astrophysics Data System (ADS)

    Lackner, Juergen M.; Waldhauser, Wolfgang; Major, Roman; Major, Boguslaw; Czarnowska, Elzbieta; Bruckert, Franz

    2008-05-01

    Non-thrombogenic blood contacting surfaces and appropriate blood flow characteristics are essential for clinical application. State-of-the-art coatings are based on heparin and struggle with the problem of bleeding. Thus, there is increasing demand for developing new coating materials for improved human body acceptance. Materials deposited by vacuum coating techniques would be an excellent alternative if the coating temperatures can be kept low due to the applied substrate materials of low temperature resistance (mostly polymers). Under these circumstances, adequate film structure and high adhesion can be reached by the Pulsed Laser Deposition at room temperature (RT-PLD), which was developed to an industrial-scaled process at Laser Center Leoben. This process was applied to deposit Ti, TiN, TiCN and diamond-like carbon (DLC) on polyurethane, titanium and silicon substrates to study the biological interactions to blood cells and the kinetic mechanism of eukaryote cell attachment. Besides high biological acceptance, distinct differences for the critical delamination shear stress were found for the coatings, indicating higher adhesion at higher carbon contents.

  3. Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Golalikhani, M.; Lei, Q. Y.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.; Xi, X. X.

    2013-07-01

    We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (θ-2θ scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10-2 Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures.

  4. Laser pulse stacking method

    DOEpatents

    Moses, Edward I.

    1992-01-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter.

  5. Laser pulse stacking method

    DOEpatents

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  6. Effects of substrate temperature on properties of NbNx films grown on Nb by pulsed laser deposition

    SciTech Connect

    Ashraf Hassan Farha, Ali Oguz Er, Yüksel Ufuktepe, Ganapati Myneni, Hani E. Elsayed-Ali

    2011-12-01

    NbN{sub x} films were deposited on Nb substrate using pulsed laser deposition. The effects of substrate deposition temperature, from room temperature to 950 C, on the preferred orientation, phase, and surface properties of NbN{sub x} films were studied by X-ray diffraction, atomic force microscopy, and electron probe micro analyzer. We find that the substrate temperature is a critical factor in determining the phase of the NbN{sub x} films. For a substrate temperature up to 450 C the film showed poor crystalline quality. With temperature increase the film became textured and for a substrate temperature of 650-850 C, mix of cubic {delta}-NbN and hexagonal phases ({beta}-Nb{sub 2}N + {delta}'-NbN) were formed. Films with a mainly {beta}-Nb{sub 2}N hexagonal phase were obtained at deposition temperature above 850 C. The c/a ratio of {beta}-Nb{sub 2}N hexagonal shows an increase with increased nitrogen content. The surface roughness of the NbN{sub x} films increased as the temperature was raised from 450 to 850 C.

  7. Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Emani, Sivanagi Reddy; Joseph, Andrews; Raju, K. C. James

    2016-05-01

    Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.

  8. Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control

    NASA Astrophysics Data System (ADS)

    Hotta, Yasushi; Ueoka, Satoshi; Yoshida, Haruhiko; Arafune, Koji; Ogura, Atsushi; Satoh, Shin-ichi

    2016-10-01

    We investigated the room temperature growth of HfO2 layers on Si substrates by pulsed laser deposition under ultra-high vacuum conditions. The laser fluence (LF) during HfO2 layer growth was varied as a growth parameter in the experiments. X-ray photoemission spectroscopy (XPS) was used to observe the interface chemical states of the HfO2/Si samples produced by various LFs. The XPS results indicated that an interface Hf-silicate layer formed, even at room temperature, and that the thickness of this layer increased with increasing pulsed LF. Additionally, Hf-Si bonds were increasingly formed at the interface when the LF was more than 2 J/cm2. This bond formation process was related to decomposition of HfO2 to its atomic states of Hf and O by multiphoton photochemical processes for bandgap excitation of the HfO2 polycrystalline target. However, the Hf-Si bond content of the interface Hf-silicate layer is controllable under high LF conditions. The results presented here represent a practical contribution to the development of room temperature processing of Hf-compound based devices.

  9. Mechanical and tribological characterization of tetrahedral diamond-like carbon deposited by femtosecond pulsed laser deposition on pre-treated orthopaedic biomaterials

    NASA Astrophysics Data System (ADS)

    Loir, A.-S.; Garrelie, F.; Donnet, C.; Subtil, J.-L.; Belin, M.; Forest, B.; Rogemond, F.; Laporte, P.

    2005-07-01

    Femtosecond pulsed laser deposition (PLD) has been performed using a mode-locked Ti:sapphire laser including an amplification stage (150 fs, 800 nm, 1 kHz) to deposit tetrahedral-amorphous carbon films (ta-C) on AISI 316L stainless steel and ultra high molecular weight polyethylene, in perspective to extend the wear resistance of materials used in hip joints. Ta-C films have been elaborated in high vacuum conditions at room temperature. The diamond-like coated silicon substrates exhibit high wear resistance (in the 10 -8-10 -9 mm 3 (N m) -1 range) with moderate hardness (in the 20-30 GPa range), which may be favorable for the accommodation motion between contacting surfaces in a hip joint. In situ sputter cleaning of the orthopaedic substrates in argon plasma prior to carbon deposition has been investigated, leading to the enhancement of the adhesion of the films onto the stainless steel substrates. The adhesion properties of films deposited in various conditions on metallic substrates have been studied by tensile tests. The tribological behavior of the coatings deposited on cleaned substrates have been widely investigated in a pin-on-flat configuration in ambient air and Ringer solution. Finally, a DLC thin film with an homogeneous thickness has been deposited on hemispherical surface of 22.2 mm in diameter of a stainless steel femoral head of a hip prosthesis, whose wear behavior will be quantified using a hip joint simulator during one million of cycles (corresponding to the human activity during one year).

  10. Laser fusion pulse shape controller

    DOEpatents

    Siebert, Larry D.

    1977-01-01

    An apparatus for controlling the pulse shape, i.e., the pulse duration and intensity pattern, of a pulsed laser system, and which is particularly well adapted for controlling the pellet ignition pulse in a laser-driven fusion reaction system. The apparatus comprises a laser generator for providing an optical control pulse of the shape desired, a pulsed laser triggered by the control pulse, and a plurality of optical Kerr-effect gates serially disposed at the output of the pulsed laser and selectively triggered by the control pulse to pass only a portion of the pulsed laser output generally corresponding in shape to the control pulse.

  11. Continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films

    NASA Astrophysics Data System (ADS)

    Christen, H. M.; Silliman, S. D.; Harshavardhan, K. S.

    2001-06-01

    A novel continuous-compositional-spread (CCS) technique based on the nonuniformity of the deposition rate typically observed in pulsed-laser deposition (PLD) is introduced. Using rapid (submonolayer) sequential deposition of the phase spread's constituents, intermixing of the constituents occurs on the atomic scale during the growth process. Therefore, a pseudobinary or pseudoternary phase diagram is deposited without the requirement of a postanneal. The approach uses the spatial variations in the deposition rate naturally occurring in PLD; therefore, there is no need for the masks typically used in combinatorial techniques. Consequently, combinatorial materials synthesis can be carried out under optimized film growth conditions (for example, complex oxides can be grown at high temperature). Additionally, lifting the need for postannealing renders this method applicable to heat-sensitive materials and substrates (e.g., films of transparent oxides on polymer substrates). PLD CCS thus offers an interesting alternative to traditional "combi" for situations where the number of constituents is limited, but the process variables are of critical importance. Additionally, the approach benefits from all the advantages of PLD, particularly the flexibility and the possibility to work with targets of relatively small size. Composition determination across the sample and mapping of physical properties onto the ternary phase diagram is achieved via a simple algorithm using the parameters that describe the deposition-rate profiles. Experimental verification using energy-dispersive x-ray spectroscopy and Rutherford backscattering spectroscopy measurements demonstrates the excellent agreement between the predicted and the calculated composition values. Results are shown for the high-temperature growth of crystalline perovskites [including (Ba,Sr)TiO3 and the formation of a metastable alloy between SrRuO3 and SrSnO3] and the room-temperature growth of transparent conducting oxides.

  12. Room-temperature deposition of nanocrystalline PbWO 4 thin films by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Ryu, J. H.; Yoon, J.-W.; Shim, K. B.; Koshizaki, N.

    2006-07-01

    Pulsed laser ablation (PLA) was applied to synthesize nanocrystalline PbWO4 thin films onto glass substrates. The effects of Ar background gas pressure on phase evolution, microstructures and optical characteristics of PbWO4 thin films were investigated in detail. The PLA processes were carried out at room temperature without substrate heating or post-annealing treatment. XRD and HR-TEM results revealed that the PbWO4 thin films are composed of nanocrystalline and amorphous phases. Moreover, the films contained a high density of lattice defects such as twin boundaries and edge dislocations. The crystallite size and crystallinity increased, which were associated with a change in surface morphology as the Ar pressure increased. Reduced tungsten states W5+ or W4+ induced by oxygen vacancies were observed at 10 Pa and the atomic concentration of all constituent element was almost stoichiometric, especially the [Pb]/[W] ratio, which was nearly unity above 50 Pa. The optical energy band-gap was 3.03 eV at 50 Pa and increased to 3.35 eV at 100 Pa, which are narrower than the reported value (4.20 eV). This optical band-gap narrowing could be attributed to localized band-tail states and new energy levels induced by the amorphous structure and inherent lattice defects.

  13. Effect of phase transformation on optical and dielectric properties of pulsed laser deposited ZnTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.; Salim, Mohammad; Kaur, Davinder

    2016-04-01

    Zinc titanate (ZnTiO3) ceramics were prepared by conventional solid state reaction method using ZnO and TiO2 in a molar ratio of 1:1 with optimized parameters. It was found that the sample sintered at 800 °C for 12 h exhibit single hexagonal phase of ZnTiO3. ZnTiO3 thin film have been deposited on ITO coated glass substrate using pulsed laser deposition (PLD) technique employing a KrF laser source (λ = 248 nm). In present work, the effect of substrate temperature, which leads to transformation of hexagonal phase to cubic phase, has been studied. The XRD pattern revealed that pure hexagonal phase of ZnTiO3 appear upto 400 °C and more increment in substrate temperature leads to transformation of hexagonal phase to cubic phase. We have observed the blue shift in absorption edge at lower temperature. When the substrate temperature increases from 300 to 400 °C the band gap decreases due to strong hexagonal phase, but more increment in substrate temperature increases the band gap causes by change of phase from hexagonal to cubic. The dielectric constant of ZnTiO3 thin film increases as the substrate temperature increases due to the enhancement in crystallinity and improved morphology.

  14. Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

    NASA Astrophysics Data System (ADS)

    Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

    2013-03-01

    In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

  15. Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

    NASA Astrophysics Data System (ADS)

    Desbiens, E.; Dolbec, R.; El Khakani, M. A.

    2002-05-01

    We have successfully developed two reactive pulsed laser deposition (PLD) processes for the growth of high-k SiO2 and SiOxNy thin films. At a KrF laser intensity of 3×108 W/cm2, both SiO2 and SiOxNy films have been deposited by ablating a silicon target in a reactive gas atmosphere (O2 and O2/N2 mixture, respectively) on both Si (100) and Pt-coated Si substrates. Two key issues are presented here, namely (i) the effect of the deposition temperature (Td in the 20-450 °C range) and (ii) the effect of the N incorporation (in the 0.3-20 at. % concentration range) on the microstructure and electrical properties of PLD SiO2 and SiOxNy thin films, respectively. For the PLD-SiO2 films, 300 °C has been identified as the optimal deposition temperature that yields stoichiometric ([O]/[Si]~1.9), hydrogen-free films with a low local disorder, a highly dense microstructure and a dielectric constant (k) higher than that quoted for thermally grown SiO2. On the other hand, the PLD SiOxNy films containing 20 at. % of N have exhibited a dielectric constant as high as ~7. A rather good agreement is obtained between the k values deduced from the Poole-Frenkel emission (PFE) model and those obtained from direct impedance measurements, confirming thereby that the PFE remains the predominant conduction mechanism in the PLD SiOxNy films.

  16. Modification of the chemical composition, morphology, and antireflection properties of WSe x films formed by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Grigoriev, S. N.; Nevolin, V. N.; Fominski, V. Yu.; Romanov, R. I.; Volosova, M. A.

    2014-09-01

    We have studied the possibility of controlling important structural characteristics of WSe x films, which belong to the class of layered materials and have good prospects for application in modern nano- and optoelectronic devices. It is established that, by using thermal treatment and ion irradiation during pulsed laser deposition (PLD) in the shadow of an antidroplet shield, it is possible to vary the Se/W atomic ratio from 5 to 1.5, change the character of atomic packing, and obtain films with either smooth or rough surfaces. An increase in the height of parabolic protrusions on the surface up to 200-500 nm leads to a decrease in the optical reflection coefficient in a broad wavelength range from 30% (typical of smooth films) to 6%, which can favor a significant increase in the efficiency of solar cells based on semiconductor films of this type.

  17. Characteristics of ultraviolet-assisted pulsed-laser-deposited Y{sub 2}O{sub 3} thin films

    SciTech Connect

    Cracium, V.; Lambers, E. S.; Bassim, N. D.; Singh, R. K.; Craciun, D.

    2000-02-01

    The properties of thin Y{sub 2}O{sub 3} films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (PLD) technique were studied. With respect to Y{sub 2}O{sub 3} films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD-grown films exhibited better structural and optical properties, especially for lower substrate temperatures, from 340 to 400 degree sign C. These layers were highly crystalline and textured along the (111) direction, and their refractive index values were similar to those of reference Y{sub 2}O{sub 3} layers. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD-grown layers. (c) 2000 Materials Research Society.

  18. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    SciTech Connect

    Pan, X. H.; Guo, W.; Pan, X. Q.; Ye, Z. Z.; He, H. P.; Liu, B.; Che, Y.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

  19. In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, C.-L.; Chia, C.-T.; Chiu, C.-C.; Wu, C.-C.; Cheng, H.-F.; Lin, I.-N.

    2001-04-01

    Atomic hydrogen etching on the pulsed laser deposited (PLD) diamond-like carbon (DLC) films were examined in situ by using Raman spectroscopy. Thermal annealing of the as-prepared DLC films was found to alter the D-band (˜1355 cm -1) and G-band (˜1582 cm -1) from unresolved features at room temperature to clearly separated bands at above 500°C, indicating graphitization of the films. The presence of atomic hydrogen retards graphitization at temperatures lower than 500°C, presumably because reactive atomic hydrogen formed sp 3-bonding carbons which prevented graphitization at below 500°C, while at above 500°C, the hydrogen etches away disordered structure of the DLC film as the intensity changes of the D-bands demonstrate.

  20. Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

    SciTech Connect

    Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk

    2014-06-09

    Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600 °C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

  1. On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition

    SciTech Connect

    Schmidt, Florian; Wenckstern, Holger von; Spemann, Daniel; Grundmann, Marius

    2012-07-02

    We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited Mg{sub x}Zn{sub 1-x}O thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate {eta}, is for binary ZnO thin films about 40 cm{sup -1}, a factor of 3 higher than in melt-grown single crystals, and increases to about 100 cm{sup -1} for the Mg-alloyed thin films.

  2. Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaojun; Man Yu, Kin; Kronawitter, Coleman X.; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.

    2012-07-01

    Undoped, Cu-doped, Se-enriched, and Cu2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of ˜1.1 × 1019 cm-3 and resistivities of ˜0.098 Ω cm (compared with previous reports of ˜1×1018 cm-3 and ˜0.75 Ω cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors.

  3. Three-dimensional microstructure of high-performance pulsed-laser deposited Ni-YSZ SOFC anodes.

    PubMed

    Kennouche, David; Hong, Jongsup; Noh, Ho-Sung; Son, Ji-Won; Barnett, Scott A

    2014-08-07

    The Ni-yttria-stabilized zirconia (YSZ) anode functional layer in solid oxide fuel cells produced by pulsed laser-deposition was studied using three-dimensional tomography. Anode feature sizes of ~130 nm were quite small relative to typical anodes, but errors arising in imaging and segmentation were shown using a sensitivity analysis to be acceptable. Electrochemical characterization showed that these cells achieved a relatively high maximum power density of 1.4 W cm(-2) with low cell resistance at an operating temperature of 600 °C. The tomographic data showed anode three-phase boundary density of ~56 μm(-2), more than 10 times the value observed in conventional Ni-YSZ anodes. Anode polarization resistance values, predicted by combining the structural data and literature values of three-phase boundary resistance in an electrochemical model, were consistent with measured electrochemical impedance spectra, explaining the excellent intermediate-temperature performance of these cells.

  4. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    SciTech Connect

    Onbasli, M. C. Kim, D. H.; Ross, C. A.; Kehlberger, A.; Jakob, G.; Kläui, M.; Chumak, A. V.; Hillebrands, B.

    2014-10-01

    Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm{sup −3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup −4}. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  5. Graphene-based textured surface by pulsed laser deposition as a robust platform for surface enhanced Raman scattering applications

    SciTech Connect

    Tite, T.; Donnet, C.; Loir, A.-S.; Reynaud, S.; Michalon, J.-Y.; Vocanson, F.; Garrelie, F.

    2014-01-27

    We have developed a surface enhanced Raman scattering (SERS)-active substrate based on gold nanoparticles-decorated few-layer (fl) graphene grown by pulsed laser deposition. Diamond-Like Carbon film has been converted to fl-graphene after thermal annealing at low temperature. The formation of fl-graphene was confirmed by Raman spectroscopy, and surface morphology was highlighted by scanning electron microscopy. We found that textured fl-graphene film with nanoscale roughness was highly beneficial for SERS detection. Rhodamine 6G and p-aminothiophenol proposed as test molecules were detected with high sensitivity. The detection at low concentration of deltamethrin, an active molecule of a commercial pesticide was further demonstrated.

  6. Studies on the Surface Morphology and Orientation of CeO2 Films Deposited by Pulsed Laser Ablation

    NASA Astrophysics Data System (ADS)

    Develos, Katherine; Kusunoki, Masanobu; Ohshima, Shigetoshi

    1998-11-01

    We studied the surface morphology and orientation of CeO2 films grown by pulsed laser ablation (PLA) on r-cut (1\\=102) Al2O3 substrates and evaluated the effects of predeposition annealing conditions of Al2O3 and film thickness of CeO2. The annealing of Al2O3 substrates improves the smoothness of the surface and performing this in high vacuum leads to better crystallinity and orientation of deposited CeO2 films compared to those annealed in oxygen. A critical value of the film thickness was found beyond which the surface roughness increases abruptly. Atomic force microscopy (AFM) study showed that the surface of CeO2 films is characterized by a mazelike pattern. Increasing the film thickness leads to the formation of larger islands which cause the increase in the surface roughness of the films. The areal density and height of these islands increased with film thickness.

  7. Imaging pulsed laser deposition growth of homo-epitaxial SrTiO3 by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    van der Torren, A. J. H.; van der Molen, S. J.; Aarts, J.

    2016-12-01

    By combining low-energy electron microscopy with in situ pulsed laser deposition we have developed a new technique for film growth analysis, making use of both diffraction and real-space information. Working at the growth temperature, we can use: the intensity and profile variations of the specular beam to follow the coverage in a layer-by-layer fashion; real-space microscopy to follow e.g. atomic steps at the surface; and electron reflectivity to probe the unoccupied band structure of the grown material. Here, we demonstrate our methodology for homo-epitaxial growth of SrTiO3. Interestingly, the same combination of techniques will also be applicable to hetero-epitaxial oxide growth, largely extending the scope of research possibilities.

  8. Pulsed laser deposition of ZnO thin films decorated with Au and Pd nanoparticles with enhanced acetone sensing performance

    NASA Astrophysics Data System (ADS)

    Alexiadou, M.; Kandyla, M.; Mousdis, G.; Kompitsas, M.

    2017-04-01

    We fabricate and compare nanocomposite thin-film ZnO chemoresistive acetone sensors with gold or palladium nanoparticles on the surface, at low operating temperatures. The sensors are fabricated by pulsed laser deposition and operate in the temperature range 159-200 °C. The ZnO films are polycrystalline, crystallizing mainly at the (002) and (101) orientations of the hexagonal phase. The nanocomposite ZnO:Au and ZnO:Pd sensors have a lower detection limit and show a response enhancement factor between 2 and 7, compared with pure ZnO sensors. The ZnO:Pd sensor performs better than the ZnO:Au sensor. The ZnO:Pd sensor sensitivity increases with the amount of palladium on the surface, while it remains roughly unchanged with the ZnO thickness. The lowest acetone concentration we detect is 26 ppm for the operating temperature of 200 °C.

  9. A study on in vitro and in vivo bioactivity of HA/45S5 composite films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Ma, Q. S.; Jin, Q. P.; Li, H. C.

    2013-04-01

    HA/45S5 composite films were deposited by pulsed laser, the crystalline phases, microstructure and bonding configurations of the films were studied by XRD, SEM and FTIR respectively, and the film-to-substrate adhesion was investigated by micro-scratch testing. In addition, the in vitro and in vivo assays were carried out. The results showed that the crystallinity and the adhesive strength of the films increased with the increase of the substrate temperature. The film deposited with the substrate temperature of 200 °C is amorphous, while crystalline HA and β-TCP were detected in the film deposited at 600 °C. The in vitro test indicates that the amorphous film has faster dissolution rate and reprecipitation rate, which implies that this film has better bioactivity than the crystalline film. However, the in vivo test suggested that the 600 °C film was more suitable to serve as clinical application than the 200 °C film, because new bone tissue grew better onto the 600 °C film surface than onto the 200 °C film surface when they were implanted in the rabbit shin bones.

  10. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Ping; Yu, Pin-Feng; Wang, Jyhpyng; Lin, Jiunn-Yuan; Chen, Yen-Mu; Chen, Szu-yuan

    2016-08-01

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  11. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

    SciTech Connect

    Majid, S. S. Rahman, F.; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.

    2015-06-24

    We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.

  12. Improved uniformity of multielement thin films prepared by off-axis pulsed laser deposition using a new heater design

    NASA Astrophysics Data System (ADS)

    Cillessen, J. F. M.; de Jong, M. J. M.; Croizé, X.

    1996-09-01

    A new compact substrate heater for the pulsed laser deposition (PLD) technique has been developed. The heater is built up of a radiation part, consisting of two quartz halogen lamps, and a rotating absorber, made of a SiC disk, to which the substrate is attached. The advantage of this system in comparison to conventional heaters is its suitability for substrate temperatures up to 800 °C in any ambient (vacuum as well as corrosive gases). The heater is applied for the deposition of thin, multielement films with improved thickness uniformity using off-axis PLD. This technique makes use of a rotating substrate which is off-centered from the depositing plasma plume. The thickness profile is modeled using predetermined stationary thickness distributions. For a variety of multielement materials good experimental uniformities in terms of thickness (in close agreement with the calculations) and of chemical composition are obtained. A relation is found between the value of experimental parameters and the achievable uniformity area within a large pressure range.

  13. Fabrication and characterization of CuxSi1-x films on Si (111) and Si (100) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Wu, Jun; He, Zhiqiang; Xie, Jun; Lu, Jingqi; Tu, Rong; Zhang, Lianmeng; Shi, Ji

    2016-05-01

    The CuxSi1-x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η"-Cu3Si formed on Si (111) at I0 = 1.0-2.0 J/cm2. The films were consisted of Cu, η'-Cu3Si, ɛ-Cu15Si4 and δ-Cu0.83Si0.17 at Td = 100-500 °C on Si (001). The films were the single phase of η-Cu3Si at Td = 700 °C. In the case of Si (111), the phase structures transformed from Cu to Cu + η'-Cu3Si to η'-Cu3Si to η'-Cu3Si + η-Cu3Si with the increasing of Td. Rectangular grains were formed on Si (001), whereas triangular grains on Si (111). Cu (001) film was epitaxially grown on Si (001) at I0 = 1.5 J/cm2 and Td = 20 °C. η-Cu3Si (001) epitaxial layer was formed on Si (111) at I0 = 1.5 J/cm2 and Td = 700 °C. The epitaxial relationships of Cu (001)[100]//Si (001)[110] and η-Cu3Si (001)[-110]//Si (111)[11-2] were identified.

  14. The investigation of Ni-Al and Co-Al based layered double hydroxides and their derived mixed oxides thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Birjega, R.; Matei, A.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Colceag, D.; Zavoianu, R.; Pavel, O. D.; Dinescu, M.

    2013-08-01

    Layered Double Hydroxides (LDHs) are host-guest materials consisting of positively charged metal/hydroxides sheets with intercalated anions and water molecules. LDHs can be described by the generic formula [[ṡmHO and their structure is formed by layers containing divalent cations (M2+: Mg, Zn, Ni, Co,…) and trivalent cations (M3+: Al, Ga, Cr,…) with an octahedral coordination. LDH films with well-oriented structure and controlled thickness are needed for numerous applications like sensors, protective coatings, catalysts, components for optoelectronics etc. In this work, we report on the deposition of Ni-Al and Co-Al based LDHs and their derived mixed oxides by pulsed laser deposition as a new approach to fabricate oriented LDHs or highly dispersed metallic mixed oxides. The influence of the laser characteristics, such as wavelength and fluence, on the films properties was studied. The films investigation techniques were X-Ray Diffraction, Atomic Force Microscopy, Scanning Electron Microscopy combined with energy dispersive X-ray analysis, and Secondary Ions Mass Spectrometry.

  15. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    SciTech Connect

    Sanchez-Ake, C.; Camacho, R.; Moreno, L.

    2012-08-15

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction between plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.

  16. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  17. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

    PubMed

    Chen, Shih-Chen; Hsieh, Dan-Hua; Jiang, Hsin; Liao, Yu-Kuang; Lai, Fang-I; Chen, Chyong-Hua; Luo, Chih Wei; Juang, Jenh-Yih; Chueh, Yu-Lun; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

  18. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

    PubMed Central

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD. PMID:24959108

  19. Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Narita, S.; Meguro, K.; Takami, T.; Enta, Y.; Nakazawa, H.

    2017-02-01

    We have grown aluminum nitride (AlN) films on Si(110) substrates by pulsed laser deposition (PLD), and investigated the effects of laser power on the crystallinity and surface morphology of the AlN films. First, we epitaxially grew a fairly flat, high-quality AlN film, which contained no rotation domains, onto the Si(110) substrate in a well-lattice-matched relationship. Secondly, we formed a SiC interfacial buffer layer on the AlN film to grow a high-quality 3C-SiC film on the SiC buffer layer by PLD, which gave rise to a 3C-SiC(111)3×3 surface. The root-mean-square-roughness value of the SiC film was smaller than the previously reported values of SiC/AlN multilayers on Si(100) and Si(111) substrates. Thirdly, we grew graphene by annealing the SiC film at a high temperature in an ultra-high vacuum. It was demonstrated that the qualified graphene layer without rotation domains was grown on the SiC film. The formation of voids and the outdiffusion of Al and N atoms from the AlN film were successfully suppressed during the high-temperature annealing.

  20. Effect of Ablation Rate on the Microstructure and Electrochromic Properties of Pulsed-Laser-Deposited Molybdenum Oxide Thin Films.

    PubMed

    Santhosh, S; Mathankumar, M; Selva Chandrasekaran, S; Nanda Kumar, A K; Murugan, P; Subramanian, B

    2017-01-10

    Molybdenum trioxide (MoO3) is a well-known electrochromic material. In the present work, n-type α-MoO3 thin films with both direct and indirect band gaps were fabricated by varying the laser repetition (ablation) rate in a pulsed laser deposition (PLD) system at a constant reactive O2 pressure. The electrochromic properties of the films are compared and correlated to the microstructure and molecular-level coordination. Mixed amorphous and textured crystallites evolve at the microstructural level. At the molecular level, using NMR and EPR, we show that the change in the repetition rate results in a variation of the molybdenum coordination with oxygen: at low repetition rates (2 Hz), the larger the octahedral coordination, and greater the texture, whereas at 10 Hz, tetrahedral coordination is significant. The anion vacancies also introduce a large density of defect states into the band gap, as evidenced by XPS studies of the valence band and supported by DFT calculations. The electrochromic contrast improved remarkably by almost 100% at higher repetition rates whereas the switching speed decreased by almost 6-fold. Although the electrochromic contrast and coloration efficiency were better at higher repetition rates, the switching speed, reversibility, and stability were better at low repetition rates. This difference in the electrochromic properties of the two MoO3 films is attributed to the variation in the defect and molecular coordination states of the Mo cation.

  1. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    SciTech Connect

    Broitman, Esteban; Flores-Ruiz, Francisco J.; Di Giulio, Massimo; Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  2. Structural, electrical and optical properties of Dy doped ZnO thin films grown by buffer assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ajimsha, R. S.; Das, A. K.; Singh, B. N.; Misra, P.; Kukreja, L. M.

    2010-04-01

    Transparent conductive dysprosium doped ZnO (Dy:ZnO) thin films with preferential orientation in the (0 0 0 2) direction were deposited on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The experimental results show that the resistivity of Dy:ZnO thin films decreased to a minimum value of ∼7.6×10 -4 Ω cm with increasing Dy concentration up to ∼0.45 at%, then increased with the further increase of Dy concentration. On the contrary, the band gap and carrier concentration of Dy:ZnO thin films initially increased, then decreased with increase of Dy concentration. The blue shift of band gap of Dy:ZnO thin films with increasing carrier concentration was attributed to the competing effects of Burstein-Moss shift and band gap narrowing. A bright room temperature photoluminescence observed at ∼575 nm in all the Dy:ZnO thin films, with maximum intensity at ∼0.45 at% of Dy doping, was attributed to be due to intra-band transitions of Dy 3+ in ZnO. Near band edge photoluminescence of ZnO was observed at ∼380 nm with photoluminescence intensity decreasing with increase of Dy concentration. Such Dy:ZnO thin films are found to be suitable candidate for luminescent device applications.

  3. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    PubMed

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  4. Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

    SciTech Connect

    Kuznetsov, Vladimir L.; Vai, Alex T.; Edwards, Peter P.; Al-Mamouri, Malek; Stuart Abell, J.; Pepper, Michael

    2015-12-07

    Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

  5. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  6. Pulsed laser deposition of two-dimensional ZnO nanocrystals on Au(111): growth, surface structure and electronic properties

    NASA Astrophysics Data System (ADS)

    Tumino, F.; Casari, C. S.; Passoni, M.; Bottani, C. E.; Li Bassi, A.

    2016-11-01

    Two-dimensional (2D) ZnO structures have been deposited on the Au(111) surface by means of the pulsed laser deposition technique. In situ scanning tunneling microscopy and scanning tunneling spectroscopy measurements have been performed to characterize morphological, structural and electronic properties of 2D ZnO at the nanoscale. Starting from a sub-monolayer coverage, we investigated the growth of ZnO, identifying different atomic layers (up to the fifth). At low coverage, we observed single- and bi-layer nanocrystals, characterized by a surface moiré pattern that is associated to a graphene-like ZnO structure. By increasing the coverage, we revealed a morphological change starting from the fourth layer, which was attributed to a transition toward a bulk-like structure. Investigation of the electronic properties revealed the semiconducting character of 2D ZnO. We observed a dependence of the density of states (DOS) and, in particular, of the conduction band (CB) on the ZnO thickness, with a decreasing of the CB onset energy for increasing thickness. The CB DOS of 2D ZnO shows a step-like behaviour which may be interpreted as due to a 2D quantum confinement effect in ZnO atomic layers.

  7. PbFe 12O 19 thin films prepared by pulsed laser deposition on Si/SiO 2 substrates

    NASA Astrophysics Data System (ADS)

    Díaz-Castañón, S.; Leccabue, F.; Watts, B. E.; Yapp, R.

    2000-10-01

    Pulsed laser ablation deposition has been used to grow polycrystalline PbFe 12O 19 thin films with high coercivity on Si/SiO 2 substrates. The influence of the substrate temperature (550-775°C) and the oxygen pressure (1.0-3.0 mbar) on the magnetic properties during the deposition is reported. The crystallisation of PbFe 12O 19 thin films occurs in the temperature range of 600-750°C, which is somewhat lower than that for the Sr and Ba hexaferrites, which crystallise in the range of 750-850°C. M-type lead hexaferrite films with high saturation magnetisation (280 emu/cm 3) and high coercive field (3.8 kOe) were grown using a substrate temperature of 700°C and a pressure of 3.0 mbar of oxygen. These films were observed to be isotropic, with an Mr/ Ms ratio of ˜0.5.

  8. Sn 1-x VxOy thin films deposited by pulsed laser ablation for gas sensing devices

    NASA Astrophysics Data System (ADS)

    Duhalde, Stella; Vignolo, M. F.; Quintana, G.; Mercader, R.; Lamagna, Antonino

    2000-02-01

    Polycrystalline pure and V-doped SnO2 thin films have been prepare by pulsed laser deposition (PLD) on Si substrates, with a Si3Ni4 buffered layer. PLD technique, under proper conditions, has probed to produce nanocrystalline-structured materials, which are suitable for gas sensing. In this work we analyze the role of V doping in the structural properties and in the electrical conductivity of the films. The deposition temperature was fixed at 600 degrees C and the films were grown in oxygen atmosphere. The films resulted nanocrystalline with 50 to 120 nm average grain size connected by necks with high surface areas. The microstructural and electronic properties of all the films were analyzed using scanning-electron microscopy, x-ray diffraction and conversion electron Moessbauer spectroscopy. Electrical conductance in a dynamic regime in dry synthetic air has been evaluated as a function of temperature. Moessbauer spectra reveal the presence of 15 percent of Sn2+ in the 5at. percent V-doped films. At about 340 degrees C, a strong increase in the conductivity of the films occurs. Possible explanations are that thermal energy could excite electrons from the vanadium ions into the crystal's conduction band or promotes the diffusion of surface oxygen vacancies towards the bulk, increasing strongly the conductivity of the film.

  9. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  10. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

  11. Pulsed inductive HF laser

    NASA Astrophysics Data System (ADS)

    Razhev, A. M.; Churkin, D. S.; Kargapol'tsev, E. S.; Demchuk, S. V.

    2016-03-01

    We report the results of experimentally investigated dependences of temporal, spectral and spatial characteristics of an inductive HF-laser generation on the pump conditions. Gas mixtures H2 - F2(NF3 or SF66) and He(Ne) - H2 - F2(NF3 or SF6) were used as active media. The FWHM pulse duration reached 0.42 μs. This value corresponded to a pulsed power of 45 kW. For the first time, the emission spectrum of an inductive HF laser was investigated, which consisted of seven groups of bands with centres around the wavelengths of 2732, 2736, 2739, 2835, 2837, 2893 and 2913 nm. The cross section profile of the laser beam was a ring with a diameter of about 20 mm and width of about 5 mm. Parameters of laser operation in the repetitively pulsed regime were sufficiently stable. The amplitude instability of light pulses was no greater than 5% - 6%.

  12. Growth and microstructure of columnar Y-doped SrZrO{sub 3} films deposited on Pt-coated MgO by pulsed laser deposition

    SciTech Connect

    Luo, Sijun Riggs, Brian C.; Shipman, Joshua T.; Adireddy, Shiva; Sklare, Samuel C.; Chrisey, Douglas B.; Zhang, Xiaodong; Koplitz, Brent

    2015-07-21

    Direct integration of proton conductor films on Pt-coated substrates opens the way to film-based proton transport devices. Columnar SrZr{sub 0.95}Y{sub 0.05}O{sub 3−δ} (SZY) films with dense microstructure were deposited on Pt-coated MgO(100) substrates at 830 °C by pulsed laser deposition. The optimal window of ambient O{sub 2} pressure for good crystallinity of SZY films is from 400 to 600 mTorr. The ambient O{sub 2} compresses the plasma plume of SZY and increases the deposition rate. The 10 nm thick Ti adhesion layer on MgO(100) greatly affects the orientation of the sputtered Pt layers. Pt deposited directly on MgO shows a highly (111)-preferred orientation and leads to preferentially oriented SZY films while the addition of a Ti adhesion layer makes Pt show a less preferential orientation that leads to randomly oriented SZY films. The RMS surface roughness of preferentially oriented SZY films is larger than that of randomly oriented SZY films deposited under the same ambient O{sub 2} pressure. As the O{sub 2} pressure increased, the RMS surface roughness of preferentially oriented SZY films increased, reaching 45.7 nm (2.61% of film thickness) at 600 mTorr. This study revealed the ambient O{sub 2} pressure and orientation dependent surface roughness of SZY films grown on Pt-coated MgO substrates, which provides the potential to control the surface microstructure of SZY films for electrochemical applications in film-based hydrogen devices.

  13. Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kim, Dong Hun; Kim, Tae Cheol; Lee, Seung Han; Jung, Hyun Kyu; Jeong, Jaeeun; Han, Seung Ho

    2017-02-01

    The crystal structure and magnetic properties of epitaxial ZnO thin films doped with 5 at% Cu on SrTiO3 (001) and (111) substrates were investigated. In the case of films deposited in oxygen, unique crystallographic growth directions on different substrates were observed, while a metallic phase was detected in films grown under vacuum. The Cu-doped ZnO thin films deposited on the SrTiO3 (111) substrates, with hexagonal structures, showed a single epitaxial relationship with the substrates, whereas those deposited on the SrTiO3 (001) substrates showed a double epitaxial growth mode. The epitaxial ZnCuO thin films deposited on the SrTiO3 (111) substrates under high vacuum exhibited a ferromagnetic signal at room temperature.

  14. Deposition head for laser

    DOEpatents

    Lewis, Gary K.; Less, Richard M.

    1999-01-01

    A deposition head for use as a part of apparatus for forming articles from materials in particulate form in which the materials are melted by a laser beam and deposited at points along a tool path to form an article of the desired shape and dimensions. The deposition head delivers the laser beam and powder to a deposition zone, which is formed at the tip of the deposition head. A controller comprised of a digital computer directs movement of the deposition zone along the tool path and provides control signals to adjust apparatus functions, such as the speed at which the deposition head moves along the tool path.

  15. Magnetic Properties and Structure of Iron-Nickel Nanoparticles and Thin Films Synthesized by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Ibrahim, Sally Ahmed

    The study of new combinations of self-assembled magnetic materials in nanoparticle and thin film form is becoming increasingly important with the continuous shrinking of data storage device size with higher densities. The work presented in this dissertation is focused towards synthesis, structural characterizations, and magnetic properties of an L10 iron-nickel (Fe50Ni50) phase that has a potential to replace noble metals based L10 magnetic materials, such as Ni-Pt, Fe-Pt, being used as recording media. Fe50Ni50 was fabricated using a pulsed laser disposition (PLD) method under various deposition conditions, the most important among which was the substrate temperature. The substrate temperature was varied all the way from liquid nitrogen boiling temperature of 77K (-196 ºC) to high temperatures up to 600 ºC. In order to understand and optimize the formation of L10 phase, the PLD method was used to fabricate FeNi in three distinct ways: (i) FeNi films were prepared using a FeNi composite (alloy) target, (ii) FeNi films were fabricated in a multilayered structure using sequential ablation of Fe and Ni targets, and (iii) FeNi thin films were fabricated in alumina (Al2O3)/FeNi/Al2O 3 sandwich structures. To promote the stabilization of L10 FeNi phase, a thin film layer of gold catalyst was deposited prior to the deposition of FeNi films. FeNi films deposited in the presence or absence of gold catalyst were annealed at 600°C for 1 hour to study effect of annealing that has been found to bring about significant alterations in structural and magnetic properties. The substrate materials such as silicon and sapphire were also found to play a significant role in the microstructural and magnetic properties of the FeNi films. The FeNi samples deposited at liquid nitrogen temperature were found to be completely glassy (amorphous), and they exhibited a perfect superparamagnetic behavior, making them good candidates for magnetic biomedical devices.

  16. The importance of pressure and mass ratios when depositing multi-element oxide thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

    2016-12-01

    Angle-resolved thickness and compositional analyses of BaTiO3, CaTiO3, La0.4Ca0.6MnO3, EuAlO3, and LiMn2O4 were performed to study the influence of the background gas pressure when depositing multi-elemental oxide materials. With increasing gas pressure the typical forward directed deposition changes to a constant thickness at all angles. Compositional changes with respect to the target show dependencies on (in order of influence): target material, deposition pressure, and angular location (substrate size). A linear relationship was found between target mass-ratios and compositional deviations. This can lead to compositional deviations of up to 70% for large mass-ratios in certain pressure regimes.

  17. Pulsed Laser Propulsion.

    DTIC Science & Technology

    1978-10-01

    Journal, Vol. 12, No. 9,September 1974, pp. 1254-1261. 5. D. D. Papailiou, ed., "Frontiers in Propulsion Research: Laser, Matter - Antimatter , Exited...82177AD-AI09 850 PHYSICAL SCIENCES INC WOBURN MA F/G 20/5 PULSED LASER PROPULSION .(U) OCT 78 P E NEBOLSINE, A N PIRRI, J S GOELA N00014-76-C 0738...UNCLASSIFIED PSI-TR-142 III~~D EEC~h~I -M 0 1111_L251.4 11 [4 LEVEL2PSI TR-1 2 LO "r PULSED LASER PROPULSION " P. E. Nebolsine, A. N. Pirri, J. S. Goela, G

  18. P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Man, Hamdi

    Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

  19. The influence of oxygen partial pressure on material properties of Eu3+-doped Y2O2S thin film deposited by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Ali, A. G.; Dejene, B. F.; Swart, H. C.

    2016-01-01

    Eu3+-doping has been of interest to improve the luminescent characteristics of thin-film phosphors. Y2O2S:Eu3+ films have been grown on Si (100) substrates by using a Pulsed Laser Deposition technique. The thin films grown under different oxygen deposition pressure conditions have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. As the oxygen partial pressure increased, the crystallinity of the films improved. Further increase of the O2 pressure to 140 mtorr reduced the crystallinity of the film. Similarly, both scanning electron microscopy and Atomic Force Microscopy confirmed that an increase in O2 pressure affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the Kubelka-Munk function was about 4.75 eV. The photoluminescence measurements indicated red emission of Y2O2S:Eu3+ thin films with the most intense peak appearing at 619 nm, which is assigned to the 5D0-7F2 transition of Eu3+. This most intense peak was totally quenched at higher O2 pressures. This phosphor may be a promising material for applications in the flat panel displays.

  20. Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

    PubMed

    Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

    2013-03-25

    InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

  1. Nanomechanical and electrical properties of Nb thin films deposited on Pb substrates by pulsed laser deposition as a new concept photocathode for superconductor cavities

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Panareo, M.; Monteduro, A. G.; Maruccio, G.; Broitman, E.; Perrone, A.

    2015-12-01

    We report a design of photocathode, which combines the good photoemissive properties of lead (Pb) and the advantages of superconducting performance of niobium (Nb) when installed into a superconducting radio-frequency gun. The new configuration is obtained by a coating of Nb thin film grown on a disk of Pb via pulsed laser deposition. The central emitting area of Pb is masked by a shield to avoid the Nb deposition. The nanomechanical properties of the Nb film, obtained through nanoindentation measurements, reveal a hardness of 2.8±0.3 GPa, while the study of the electrical resistivity of the film shows the appearance of the superconducting transitions at 9.3 K and 7.3 K for Nb and Pb, respectively, very close to the bulk material values. Additionally, morphological, structural and contamination studies of Nb thin film expose a very low droplet density on the substrate surface, a small polycrystalline orientation of the films and a low contamination level. These results, together with the acceptable Pb quantum efficiency of 2×10-5 found at 266 nm, demonstrate the potentiality of the new concept photocathode.

  2. Large-Area Deposition of MoS2 by Pulsed Laser Deposition with In Situ Thickness Control.

    PubMed

    Serna, Martha I; Yoo, Seong H; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N; Kim, Moon J; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A

    2016-06-28

    A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 10(4) Ω cm(-1), were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.

  3. Production of high-performance and improved-durability Pt-catalyst /support for proton-exchange-membrane fuel cells with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Ting-Wei; Qayyum, Hamza; Lin, Guan-Ren; Chen, Szu-yuan; Tseng, Chung-Jen

    2016-06-01

    Pulsed laser deposition in Ar atmosphere is used to deposit Pt nanoparticles onto gas diffusion layer, and its application to proton-exchange-membrane fuel cell is optimized and characterized. When used at anode side, with a Pt loading of 17 μg cm-2 the fuel-cell current density at 0.6 V reaches 1.08 A cm-2, which is close to that of a cell with the anode made by conventional slurry process using E-TEK Pt /C of 200 μg cm-2 Pt loading. The usage of Pt is decreased by 12 fold. Such a low usage of Pt prepared by pulsed laser deposition can be ascribed to the prevention of forming isolated regions that occurs with Pt /C slurry, good dispersion of Pt particles on support, and small particle sizes of 2-3 nm. Furthermore, using accelerated degradation test, it is found that the pulsed laser deposition sample retains 60% of its initial electrochemical surface area after 5000 potential cycles, much higher than that with E-TEK Pt /C, which retains only 7% of its initial electrochemical surface area. The higher electrochemical durability can be attributed to the higher degree of graphitization in the gas diffusion layer used as compared with the carbon black in E-TEK Pt /C, which leads to stronger binding of the Pt nanoparticles onto the carbon support and stronger corrosion resistance of the carbon support.

  4. Optical Multichannel Imaging of Pulsed Laser Deposition of ZnO (PostPrint)

    DTIC Science & Technology

    2014-08-01

    superconductors to optical materials. The images detailed here will demonstrate the unique plume evolution that occurs and the high-speed ionic species, and...for depositing materials for use in applications ranging from hard coatings and superconductors to optical materials. The images detailed here will

  5. Growth of Zinc Phosphide (Zn3P2) and Iron Disulfide (FeS2) using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vaddi, Rajesh

    The growing energy needs of society have triggered tremendous interest in the development of photovoltaics formed from earth abundant materials. Zinc Phosphide (Zn3P2) and Iron Pyrite (FeS2) are two materials formed from elements with large Earth crustal abundances that have nearly ideal band gap energies (1.5eV and 0.96 eV, respectively) and optical absorption coefficients (~104 /cm) for use as absorber layers in solar cells. In this work, the structural, optical, and electronic properties of these materials produced in thin film form using pulsed laser deposition have been explored. Stoichiometric Zn3P2 thin films were obtained at a laser energy density of 3 J/cm2. However, these films were found to be amorphous. Crystallization of these highly resistive amorphous thin films was possible after rapid thermal annealing (RTA). A near optimal band gap of 1.6 eV and a high absorption coefficient of >104/cm were observed for samples annealed at 500 C for 60 seconds when high ramp rates of 150 °C/sec were used for annealing. XPS studies showed the presence of a trace amount of oxygen in the samples upon depth profiling. Schottky barrier heights were extracted for samples annealed at 350 °C and 500 °C with different metals. Al and Mg showed higher barrier heights with good diode rectification behavior. Fermi level pinning was shown to be a significant concern in both cases due to the large values of interface states observed (> 1013/cm2-eV). A Schottky barrier solar cell was fabricated using these films and showed low efficiency with a low Voc of 410 mV that was impacted by Fermi level pinning. Growth of Iron pyrite thin films from an FeS target was demonstrated for the first time using pulsed laser deposition. For the different laser energy densities and substrate temperatures explored, amorphous FeS (Pyrrhotite) was mainly produced. Conversion of FeS to FeS2 was obtained by sulfurization of thin films at 350 °C for times of 30 minutes at a N2 flow rates of 200

  6. Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

    NASA Technical Reports Server (NTRS)

    Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

    1991-01-01

    The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

  7. Low temperature synthesis of hierarchical TiO2 nanostructures for high performance perovskite solar cells by pulsed laser deposition

    DOE PAGES

    Yang, Bin; Mahjouri-Samani, Masoud; Rouleau, Christopher M.; ...

    2016-06-10

    A promising way to advance perovskite solar cells is to improve the quality of the electron transport material e.g., titanium dioxide (TiO2) in a direction that increases electron transport and extraction. Although dense TiO2 films are easily grown in solution, efficient electron extraction suffers due to a lack of interfacial contact area with the perovskite. Conversely, mesoporous films do offer high surface-area-to-volume ratios, thereby promoting efficient electron extraction, but their morphology is relatively difficult to control via conventional solution synthesis methods. Here, a pulsed laser deposition method was used to assemble TiO2 nanoparticles into TiO2 hierarchical nanoarchitectures having the anatasemore » crystal structure, and prototype solar cells employing these structures yielded power conversion efficiencies of ~ 14%. Our approach demonstrates a way to grow high aspect-ratio TiO2 nanostructures for improved interfacial contact between TiO2 and perovskite materials, leading to high electron-hole pair separation and electron extraction efficiencies for superior photovoltaic performance. In addition, compared to conventional solution-processed TiO2 films that require 500 °C to obtain a good crystallinity, our relatively low temperature (300 °C) TiO2 processing method may promote reduced energy-consumption during device fabrication as well as enable compatibility with various flexible polymer substrates.« less

  8. Synthesis and characterization of amorphous SiO2 nanowires via pulsed laser deposition accompanied by N2 annealing

    NASA Astrophysics Data System (ADS)

    Li, Hui; Guan, Leilei; Xu, Zhuoqi; Zhao, Yu; Sun, Jian; Wu, Jiada; Xu, Ning

    2016-12-01

    Amorphous SiO2 nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N2. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO2 nanowires is about 1200 °C and the grown SiO2 nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO2 and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO2 nanowire growth in the solid-liquid-solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350-800 nm, meanwhile the photoluminescence spectra of the as-grown SiO2 nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm.

  9. Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

    NASA Astrophysics Data System (ADS)

    Yoshida, T.; Tachibana, T.; Maemoto, T.; Sasa, S.; Inoue, M.

    2010-12-01

    We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm2/V s. By using the ZnO thin film grown by two-step PLD and a HfO2 high- k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×106 and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.

  10. Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

    SciTech Connect

    Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy; Fernández, Félix E.

    2015-09-28

    Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between room temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.

  11. Optical, ferroelectric, and piezoresponse force microscopy studies of pulsed laser deposited Aurivillius Bi₅FeTi₃O₁₅ thin films

    SciTech Connect

    Kooriyattil, Sudheendran; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Barrionuevo, Danilo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-10-14

    Bi₅FeTi₃O₁₅ (BFTO) based Aurivillius ferroelectric thin films were fabricated on strontium ruthanate coated amorphous fused silica substrates using pulsed laser deposition technique. Optical, ferroelectric, and piezoresponse properties of these thin films were investigated. The estimated refractive index (n) and extinction coefficient (k) for these films were in the range from 2.40 to 2.59 and 0.012 to 0.19, respectively. The bandgap of the BFTO thin layers was estimated to be 2.88 eV. Domain switching and hysteresis loops of BFTO films were studied utilizing piezoresponse force microscopy (PFM). The measured apparent polarization (P{sub r}) and coercive field (E{sub c}) for the samples were 20 μC/cm² and 250 kV/cm, respectively. The amplitude and phase hysteresis curves obtained from PFM characterization reveal that these films can be switched below 5 V. These results suggest that BFTO in thin film form is a promising material for photo ferroelectric and optoelectronic devices applications.

  12. Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

    SciTech Connect

    Imanaka, Atsuhiro; Sasaki, Tsubasa; Hotta, Yasushi Satoh, Shin-ichi

    2014-09-01

    The authors fabricated 2 × 1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2 × 1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2 × 1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720 °C for 1 min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720 ± 20 °C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2 × 1 Sr-reconstructed Si(100) surfaces.

  13. 3-D matrix template-assisted growth of oriented oxide nanowire arrays using glancing angle pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wright, N.; Mateo-Feliciano, D.; Ostoski, A.; Mukherjee, P.; Witanachchi, S.

    Nanosphere lithography is a combination of different methods to nanofabrication. In this work nanosphere lithography is used to study the growth of Zinc Oxide Nano-columns (ZnO NCs) on different diameter Silica Nanosphere (SNS) self-assembled templates. ZnO NCs are promising building blocks for many existing and emerging optical, electrical, and piezoelectric devices, specifically, the seeded growth of other oxide materials. Recently, reports have shown a ferroelectric phase of zinc stannate (ZnSnO3) and while lead zirconium titanate oxide (PZT) has been the main material of interest in ferroelectric and piezoelectric applications, the toxicity of lead has been of great concern. The possibility of developing lead free piezoelectric materials is of great interest in the ferroelectric community. Langmuir-Blodgett method was used to construct a self-assembled monolayer of SNSs on silicon substrates. Oriented ZnO NCs were grown on top of the spheres using the glancing angle pulsed laser deposition technique. Columns were formed in a spatially ordered closed-packed hexagonal configuration. Growth of ZnO NCs was studied as function of ambient Oxygen pressure with SNS size ranging from 250-1000 nm. Cross-sectional Scanning Electron Microscopy and X-ray diffraction (XRD) were used to study the template structure. Relative aspect ratios were studied and showed tunability of column dimensions with sphere size. XRD revealed ZnO NC arrays were c-axis oriented with hexagonal wurtzite structure.

  14. Photoluminescence Characteristics of Pulsed Laser Deposited ZnO Thin Films Grown in Nitrogen/Oxygen Ambients

    NASA Astrophysics Data System (ADS)

    Thomas, M. A.; Cui, J. B.; Soo, Y. C.; Kandel, H.; Chen, T. P.; Daghlian, C. P.

    2009-03-01

    ZnO thin films were grown by pulsed laser deposition using a Zn target in different atmospheres. The samples were characterized by SEM, XRD, EDX, and temperature dependent photoluminescence (PL) measurements. The growth conditions were varied sequentially from a pure oxygen to a pure nitrogen atmosphere, and the resulting changes of the material properties were investigated. The presence of nitrogen during growth was found to have a strong impact on the materials. Samples grown with higher nitrogen concentrations showed weak PL characteristics at room temperature as well as a small temperature dependence of the near band edge emission. At temperatures below 40 K, a sharp and pronounced emission peak was present at 3.362 eV. In an attempt to understand the PL characteristics, the samples were annealed in both pure oxygen and pure nitrogen environments at 600 C. The samples grown with large nitrogen ratios exhibited a strong dependence on the annealing atmosphere; those annealed in nitrogen showed a strong increase in emissions in the 3.362 eV range compared to the same samples annealed in oxygen. In addition, the defect emissions of the samples were strongly affected by the presence of nitrogen during annealing. The possible role of nitrogen in ZnO growth and annealing is discussed.

  15. Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

    DOE PAGES

    Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

    2016-11-18

    In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

  16. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  17. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    SciTech Connect

    Sokolov, N. S. Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  18. Superexchange and iron valence control by off-stoichiometry in yttrium iron garnet thin films grown by pulsed laser deposition

    SciTech Connect

    Dumont, Y.; Keller, N.; Popova, E.; Schmool, D.S.; Bhattacharya, S.; Stahl, B.; Tessier, M.; Guyot, M.

    2005-05-15

    Controlled off-stoichiometric single phase polycrystalline yttrium iron garnet (YIG) thin films have been grown by pulsed laser deposition, adjusting the oxygen partial pressure P{sub O2} between 5 and 400 mTorr. Atomic stoichiometry by RBS shows an oxygen deficiency for P{sub O2}P{sub stoich}. P{sub stoich}=30 mTorr refers to films showing magnetic and structural properties of the bulk stoichiometric YIG. Curie temperature T{sub c} and saturation magnetization 4{pi}Ms decreased for P{sub O2}P{sub stoich}: Increase of Tc (up to +10%) and of 4{pi}Ms (up to +20%) and lattice parameter compression. Microscopic interpretation is given in terms of superexchange interaction and creation and site selectivity of iron vacancies.

  19. Growth and optical properties of SrBi2Nb2O9 ferroelectric thin films using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Pingxiong; Carroll, David L.; Ballato, John; Schwartz, Robert W.

    2003-06-01

    High quality SrBi2Nb2O9 ferroelectric thin films were fabricated on platinized silicon using pulsed laser deposition assisted with dc glow discharge plasma. Microstructure and ferroelectric properties of the films were characterized. Optical properties of the thin films were studied by spectroscopic ellipsometry and photoluminescence from the ultraviolet to the infrared region. Optical constants, n˜0.56 in the infrared region and n˜2.24 in the visible spectral region, were determined through multilayer analyses on their respective pseudodielectric functions. The band-gap energy is estimated to be 3.60 eV. A photoluminescence peak at 0.78 μm, whose intensity decreases with decreasing temperature, was observed when excited with subband-gap energy (2.41 eV). This emission process may involve intermediate defect states at the crystallite boundaries. A possible mechanism for the observed photoluminescence, a Nb4+-O- exciton in the NbO6 octahedron, is discussed.

  20. Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

    SciTech Connect

    Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; Eres, Gyula

    2016-11-18

    In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substrate temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.

  1. Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

    SciTech Connect

    Gbordzoe, S. Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

    2014-08-14

    The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit.

  2. Synthesis and modification of mesoporous silica and the preparation of molecular sieve thin films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Coutinho, Decio Heringer

    2001-07-01

    Hexagonal mesoporous DAM-1 (Dallas Amorphous Material-1) was prepared using Vitamin E TPGS as the structure-directing agent. Depending upon the temperature and gel composition, highly ordered and hydrothermally stable DAM-1 with various morphologies could be achieved including spheres, gyroids, discoid, hexagonal plates and rods. This synthesis was modified to prepare hybrid organic-inorganic amine and thiol bifunctionalized DAM-1 by direct co-condensation under acidic conditions. Patterned DAM-1 thin films were prepared on patterned transparencies utilizing pulsed laser deposition (PLD) and line patterning techniques. DAM-1 laser ablation onto the patterned substrate followed by hydrothermal treatment resulted in a densely packed film. Removal of the patterned lines by sonication revealed patterned DAM-1 films. Thin films of zeolite type X were also prepared using the PLD technique. Laser ablation of zeolite X onto TiN-coated silicon wafers followed by a hydrothermal treatment resulted in partially oriented, crystalline membranes. Hydrothermal treatment of PLD films on stainless steel mesh produced a coated wire mesh with a 3-mum thick zeolite X film. A novel strategy for imprinting mesoporous SBA-15 that combines a triblock copolymer template and a chiral ruthenium complex is reported. A chiral PEO helix was formed by the chiral ruthenium complex interaction with the block copolymer during the synthesis of SBA-15. Upon removal of the chiral ruthenium complex, a stereospecfic cavity was created. Preliminary results indicated stereoselective absorption of Delta or Λ-Ru(phen)3 2+ isomer from a racemic mixture could be achieved depending on the chirality of the PEO chain. Practicum Two. The industrial practicum report describes the process development unit (PDU) 3-pentenenitrile (3PN) refining operation. This distillation works was operated to refine crude 3PN product, which contained 3PN, 2-methyl-3-butenenitrile (2M3BN), and other byproducts. This report also

  3. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    NASA Astrophysics Data System (ADS)

    Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

    2017-02-01

    We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

  4. Structure and photoluminescence of ultrathin films of SnO2 nanoparticles synthesized by means of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gaidi, M.; Hajjaji, A.; Smirani, R.; Bessais, B.; El Khakani, M. A.

    2010-09-01

    Tin oxide (SnO2) ultrathin films were deposited by pulsed laser deposition (PLD) onto SiO2/Si and quartz substrates, at various nominal thicknesses ranging from isolated nanoparticles (NPs) to ˜300 nm-thick films, under an oxygen background pressure of 10 mTorr. The microstructural and surface morphologies of the NP-based SnO2 films were characterized by x-ray diffraction and atomic force microscopy, as a function of their nominal film thickness. The PLD-SnO2 films were found to be composed of NPs (in the 1-6 nm range), whose size increases with the film thickness. The energy band gap, as determined from the absorption edge, was found to shift to higher values with decreasing the film thickness (i.e., decreasing the NPs size). It was found that an annealing at 700 °C under O2 ambient is a prerequisite to get a photoluminescence (PL) emission from the PLD-SnO2 films. The PL of the annealed SnO2 films was found to consist of two broad emission bands, regardless of the SnO2 film thickness. The first band is composed of 3 PL subbands peaking at 3.20, 3.01, and 2.90 eV, while the second one is centered on 2.48 eV. In spite of the observed band-gap widening (as confirmed by theoretical calculation), we show that surface state (e.g., oxygen vacancies) dominate completely the PL emission of SnO2 NPs, which becomes more luminescent as the NPs size decreases while the PL energy remains unchanged. The PL properties of the PLD-SnO2 NPs are discussed in terms of defects and/or oxygen vacancies related transitions.

  5. Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vispute, R. D.; Narayan, J.; Dovidenko, K.; Jagannadham, K.; Parikh, N.; Suvkhanov, A.; Budai, J. D.

    1996-12-01

    High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10-6 Torr), and followed by a deposition in the range of 5-10×10-4 Torr. X-ray diffraction (Θ, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ˜13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80-90 Å crystalline interposing layer presumably of TiNxO1-x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm-1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm-1 was less than 10-7 A/cm2.

  6. Pulsed Laser Deposition of Carbide Coatings for Rolling and Sliding Contact Applications

    DTIC Science & Technology

    2003-03-01

    due to a concentration-dependent diffusivity effect. Overall, results obtained here indicate that carbide-silver composite coatings are promising...by Magnetron Sputter Deposition," J. Vac. Sci. Tech. A, v. 19, pp. 1912 -1918 (2001). 4 A.R. Phani and J.E. Krzanowski, "Stnrcture and Mechanical...amorphization. In these experiments, we examined the entire range of WC to SiC compositions. The results indicated that small additions of SiC (< 25

  7. Nanofabrication with pulsed lasers.

    PubMed

    Kabashin, Av; Delaporte, Ph; Pereira, A; Grojo, D; Torres, R; Sarnet, Th; Sentis, M

    2010-02-24

    An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser-matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics.

  8. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M.; Zhao, H. J.; Chen, X. M.; Bellaiche, L.

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C} = 31.8 K with a saturation magnetization of 4.2 μ{sub B} per formula unit at 10 K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ∼0.7 eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  9. Effect of Growth Temperature on the Magnetic, Microwave, and Cation Inversion Properties on NiFe2O4 Thin Films Deposited by Pulsed Laser Ablation Deposition

    SciTech Connect

    Chinnasamy,C.; Yoon, S.; Yang, A.; Baraskar, A.; Vittoria, C.; Harris, V.

    2007-01-01

    First principles band structure calculations suggest that the preferential occupation of Ni{sup 2+} ions on the tetrahedral sites in NiFe{sub 2}O{sub 4} would lead to an enhancement of the exchange integral and subsequently the Neel temperature and magnetization. To this end, we have deposited NiFe{sub 2}O{sub 4} films on MgO substrates by pulsed laser deposition. The substrate temperature was varied from 700 to 900 {sup o}C at 5 mTorr of O2 pressure. The films were annealed at 1000 {sup o}C for different times prior to their characterization. X-ray diffraction spectra showed either (100) or (111) orientation with the spinel structure dependent on the substrate orientation. Magnetic studies showed a magnetization value of 2.7 kG at 300 K. The magnetic moment was increased to the bulk value as a result of postdeposition annealing at 1000 {sup o}C. The as produced films show that the ferromagnetic resonance linewidth at 9.61 GHz was 1.5 kOe, and it was reduced to 0.34 kOe after postannealing at 1000 {sup o}C. This suggests that the annealing led to the redistribution of Ni{sup 2+} ions to their equilibrium octahedral sites. Further, it is shown that the magnetically preferred direction of H{sub a} can be aligned perpendicular to the film plane when films are grown with a fixed oxygen pressure of 5 mTorr for films deposited at 700 and 900 {sup o}C.

  10. Multilayers Diamond-Like Carbon Film with Germanium Buffer Layers by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Y.; Lu, Y. M.; Guo, Y. L.; Huang, G. J.; Wang, S. Y.; Tian, F. T.

    Multilayer diamond-like carbon film with germanium buffer layers, which was composed of several thick DLC layers and thin germanium island “layers” and named as Ge-DLC film, was prepared on the germanium substrate by ultraviolet laser. The Ge-DLC film had almost same surface roughness as the pure DLC film. Hardness of the Ge-DLC film was above 48.1GPa, which was almost the same as that of pure DLC film. Meanwhile, compared to the pure DLC film, the critical load of Ge-DLC film on the germanium substrate increased from 81.6mN to 143.8mN. Moreover, Ge-DLC film on germanium substrates had no change after fastness tests. The results showed that Ge-DLC film not only kept high hardness but also had higher critical load than that of pure DLC film. Therefore, it could be used as practical protective films.

  11. Pulsed inductive HF laser

    SciTech Connect

    Razhev, A M; Kargapol'tsev, E S; Churkin, D S; Demchuk, S V

    2016-03-31

    We report the results of experimentally investigated dependences of temporal, spectral and spatial characteristics of an inductive HF-laser generation on the pump conditions. Gas mixtures H{sub 2} – F{sub 2}(NF{sub 3} or SF6{sub 6}) and He(Ne) – H{sub 2} – F{sub 2}(NF{sub 3} or SF{sub 6}) were used as active media. The FWHM pulse duration reached 0.42 μs. This value corresponded to a pulsed power of 45 kW. For the first time, the emission spectrum of an inductive HF laser was investigated, which consisted of seven groups of bands with centres around the wavelengths of 2732, 2736, 2739, 2835, 2837, 2893 and 2913 nm. The cross section profile of the laser beam was a ring with a diameter of about 20 mm and width of about 5 mm. Parameters of laser operation in the repetitively pulsed regime were sufficiently stable. The amplitude instability of light pulses was no greater than 5% – 6%. (lasers)

  12. Pulsed laser beam intensity monitor

    SciTech Connect

    Cason, C.M.; Jones, R.W.

    1982-07-13

    A pulsed laser beam intensity monitor measures the peak power within a selectable cross section of a test laser beam and measures integrated energy of the beam during the pulse period of a test laser. A continuous wave laser and a pulsed ruby laser are coaxially arranged for simultaneously transmitting optical output energy through a crystal flat during the time a test laser pulse is transmitted through the flat. Due to stress birefringence in the crystal, the ruby laser pulse transmitted through the flat is recorded and analyzed to provide peak power information about the test laser output pulse, and the continuous wave laser output reflected from the crystal flat provides a measurement of energy during the test laser pulse.

  13. Effects of Growth Temperature on Epitaxial Thin Films of Vanadium Dioxide Grown by Pulsed Laser Deposition

    SciTech Connect

    Nag, Joyeeta; HaglundJr., Richard F; Payzant, E Andrew

    2011-01-01

    Stoichiometric vanadium dioxide in all of its bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by structural change, induced by various physical and chemical stimuli such as temperature, ultrashort light pulses, electric field, doping or strain. In these applications, the optical qualities of the films are of paramount importance, but are often highly variable depending on fabrication procedure. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving room temperature growth followed by annealing and direct high temperature growth. Strain at the interface of the substrate and the film due to growth at different temperatures leads to significant differences in morphologies and phase transition characteristics. We present a comparative study of the morphologies and switching characteristics of the two films and conclude that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance. Our observation is supported by theoretical and experimental studies of epitaxial growth of semiconductors.

  14. Nanofabrication with Pulsed Lasers

    PubMed Central

    2010-01-01

    An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics. PMID:20672069

  15. Dissipative rogue waves induced by long-range chaotic multi-pulse interactions in a fiber laser with a topological insulator-deposited microfiber photonic device.

    PubMed

    Liu, Meng; Cai, Ze-Rong; Hu, Song; Luo, Ai-Ping; Zhao, Chu-Jun; Zhang, Han; Xu, Wen-Cheng; Luo, Zhi-Chao

    2015-10-15

    We reported on the generation of dissipative rogue waves (DRWs) induced by long-range chaotic multi-pulse interactions in a fiber laser based on a topological insulator (TI)-deposited microfiber photonic device. By virtue of the simultaneous saturable absorption effect and high nonlinearity provided by the TI-deposited microfiber, a localized, chaotic multi-pulse wave packet with strong long-range nonlinear interactions could be obtained, which gives rise to the formation of DRWs. The results might enhance the understanding of DRWs in optical systems, and further demonstrated that the TI-deposited microfiber could be considered as an excellent photonic device with both saturable absorption and highly nonlinear effects for the application field of nonlinear optics.

  16. Pulsed gas laser

    DOEpatents

    Anderson, Louis W.; Fitzsimmons, William A.

    1978-01-01

    A pulsed gas laser is constituted by Blumlein circuits wherein space metal plates function both as capacitors and transmission lines coupling high frequency oscillations to a gas filled laser tube. The tube itself is formed by spaced metal side walls which function as connections to the electrodes to provide for a high frequency, high voltage discharge in the tube to cause the gas to lase. Also shown is a spark gap switch having structural features permitting a long life.

  17. Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

    SciTech Connect

    Ghica, C. Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-14

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.

  18. Growth of different phases of yttrium manganese oxide thin films by pulsed laser deposition

    SciTech Connect

    Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2012-06-05

    Various phases of yttrium manganese oxide (YMO) thin films have been synthesized on different substrates from a single target of h-YMnO{sub 3}. It is observed that the phase stability and crystallinity of YMO thin films depend on the substrate used and oxygen partial pressure (OPP). (110) oriented and polycrystalline growth of h-YMnO{sub 3} are observed on the Al{sub 2}O{sub 3} (0001) and NGO (110) substrates respectively, when grown in OPP {approx_equal} 10{sup -6} Torr. While for similar OPP value, growth of mixed phases (h-YMnO{sub 3} and o-YMn{sub 2}O{sub 5}) is observed on Si (001) substrate. Oriented growth of O-YMn{sub 2}O{sub 5} phase film on Si (001) substrate is observed first time, when deposited at OPP value of 225 and 350 mTorr. +3 and mixed oxidation states (+3 and +4) of Mn were confirmed by x-ray photoelectron spectroscopy in pure YMnO{sub 3} phase and YMn{sub 2}O{sub 5} phase respectively.

  19. Blue-Emitting Eu2+-Doped CaAl2O4 Phosphor Thin Films Prepared Using Pulsed Laser Deposition Technique with Post Annealing

    NASA Astrophysics Data System (ADS)

    Kunimoto, Takashi; Kakehi, Ken-nosuke; Yoshimatsu, Ryo; Ohmi, Koutoku; Tanaka, Shosaku; Kobayashi, Hiroshi

    2001-10-01

    Blue-emitting Eu2+-doped calcium aluminate phosphor thin films were obtained using the pulsed laser deposition technique with post annealing. As-deposited films were amorphous and showed weak red Eu3+ photoluminescence (PL). By annealing in reducing atmosphere (N2/H2:2% mixed gas) at 950°C for 3 h, the film was crystallized and showed a PL emission band peaking at about 447 nm, which originated from the 4f65d to 4f7 transition of Eu2+ ion. It is considered that the deposited film consists mainly of CaAl2O4 and partly of other binary compounds of the CaO-Al2O3 system. It was determined that the PL intensity of Eu2+ in CaAl2O4 can be controlled by the laser fluence, target-substrate distance and injection gas.

  20. Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target

    NASA Astrophysics Data System (ADS)

    Yang, Ke; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Zeng, Guanggen; Wang, Wenwu; Liu, Cai; Feng, Lianghuan

    2017-02-01

    AlSb films which are a promising absorber layer for thin film solar cells were grown on glass substrate at different substrate temperature ranging from room temperature to 400 °C on glass substrates using aluminum-antimony alloying target by pulsed laser deposition (PLD) technique. Structural, optical and electrical properties of AlSb thin films were studied by X-ray diffraction (XRD), ultraviolet-visible spectrophotometer and a home-made four-probe-contact high temperature system respectively. XRD pattern shows that AlSb film is amorphous at room temperature, but when substrate temperature is higher than 100 °C, AlSb films present cubic phase structure with the preferential orientation of (111) plane. And intensity of diffraction peaks of AlSb film prepared at substrate temperature of 200 °C are stronger than that of other substrate temperature. The electrical measurement results show that conductivity activation energy of AlSb film is 0.25 eV and 0.28 eV. The indirect optical band gap is about 1.63 eV, which is very close to its theoretical value of 1.62 eV. The results of energy dispersive spectrometer (EDS) indicated the ratio of Al to Sb of AlSb films is about 1:1.

  1. Pulsed laser deposited porous nano-carpets of indium tin oxide and their use as charge collectors in core-shell structures for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Garvey, Timothy R.; Farnum, Byron H.; Lopez, Rene

    2015-01-01

    Porous In2O3:Sn (ITO) films resembling from brush carpets to open moss-like discrete nanostructures were grown by pulsed laser deposition under low to high background gas pressures, respectively. The charge transport properties of these mesoporous substrates were probed by pulsed laser photo-current and -voltage transient measurements in N719 dye sensitized devices. Although the cyclic voltammetry and dye adsorption measurements suggest a lower proportion of electro-active dye molecules for films deposited at the high-end background gas pressures, the transient measurements indicate similar electron transport rates within the films. Solar cell operation was achieved by the deposition of a conformal TiO2 shell layer by atomic layer deposition (ALD). Much of the device improvement was shown to be due to the TiO2 shell blocking the recombination of photoelectrons with the electrolyte as recombination lifetimes increased drastically from a few seconds in uncoated ITO to over 50 minutes in the ITO with a TiO2 shell layer. Additionally, an order of magnitude increase in the electron transport rate in ITO/TiO2 (core/shell) films was observed, giving the core-shell structure a superior ratio of recombination/transport times.Porous In2O3:Sn (ITO) films resembling from brush carpets to open moss-like discrete nanostructures were grown by pulsed laser deposition under low to high background gas pressures, respectively. The charge transport properties of these mesoporous substrates were probed by pulsed laser photo-current and -voltage transient measurements in N719 dye sensitized devices. Although the cyclic voltammetry and dye adsorption measurements suggest a lower proportion of electro-active dye molecules for films deposited at the high-end background gas pressures, the transient measurements indicate similar electron transport rates within the films. Solar cell operation was achieved by the deposition of a conformal TiO2 shell layer by atomic layer deposition (ALD). Much

  2. Pulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters

    NASA Astrophysics Data System (ADS)

    Suryawanshi, Sachin R.; Singh, Anil K.; Phase, Deodatta M.; Late, Dattatray J.; Sinha, Sucharita; More, Mahendra A.

    2016-10-01

    Gadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure ~10-8 mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/cm2 at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler-Nordheim ( F- N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor ( β) estimated using the slopes of the F- N plots indicate that the PLD GdB6 coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.

  3. Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

    SciTech Connect

    Shibuya, Keisuke Sawa, Akihito

    2015-10-15

    We systematically examined the effects of the substrate temperature (T{sub S}) and the oxygen pressure (P{sub O2}) on the structural and optical properties polycrystalline V O{sub 2} films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O{sub 2} phase was formed at a T{sub S} ≥ 450 °C at P{sub O2} values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O{sub 2} films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O{sub 2} on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O{sub 2} films grown at a T{sub S} of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the T{sub S} and P{sub O2}, and was maximal for a V O{sub 2} film grown at 450 °C under 20 mTorr. Based on the results, we derived the P{sub O2} versus 1/T{sub S} phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O{sub 2} films on silicon platforms.

  4. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  5. Thermoelectric properties of bismuth-selenide films with controlled morphology and texture grown using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Le, Phuoc Huu; Liao, Chien-Neng; Luo, Chih Wei; Lin, Jiunn-Yuan; Leu, Jihperng

    2013-11-01

    Polycrystalline, thermoelectric thin films of bismuth selenide (Bi2Se3) were grown on SiO2/Si (1 1 1) substrates, using pulsed laser deposition (PLD). Bi2Se3 films with highly c-axis-oriented and controlled textures were fabricated by maintaining the helium gas pressure (P) between 0.7 and 173 Pa and the substrate temperature (Ts) between 200 and 350 °C. The carrier concentration (n) of films decreased with increasing P, which was attributed to the increase of Se concentration from Se deficiency (P ≤ 6.7 Pa) to stoichiometry to slight Se enrichment (P ≥ 40 Pa). The Seebeck coefficient (S) was enhanced considerably because of the reduction in n, following the S ˜ n-2/3 relation approximately. The average grain size increased from approximately 100 to 500 nm when Ts was raised from 200 to 350 °C, resulting in enhanced carrier mobility (μ) and electrical conductivity (σ) and a reduced full width at half maximum of (0 0 6) peaks. The shape of grains transformed from rice-like at Ts of 200-250 °C to layered-hexagonal platelets (L-HPs) or super-layered flakes (S-LFs) at Ts of 300-350 °C. Films that were grown at 300 °C and 40 Pa and contained highly c-axis oriented L-HPs possessed the highest power factor (PF = S2σ), which reached 5.54 μW cm-1 K-2, where S = 75.8 μV/K and σ = 963.8 S cm-1.

  6. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  7. Stimulation of osteogenic and angiogenic ability of cells on polymers by pulsed laser deposition of uniform akermanite-glass nanolayer.

    PubMed

    Wu, Chengtie; Zhai, Dong; Ma, Hongshi; Li, Xiaomin; Zhang, Yali; Zhou, Yinghong; Luo, Yongxiang; Wang, Yueyue; Xiao, Yin; Chang, Jiang

    2014-07-01

    Polymer biomaterials have been widely used for bone replacement/regeneration because of their unique mechanical properties and workability. Their inherent low bioactivity makes them lack osseointegration with host bone tissue. For this reason, bioactive inorganic particles have been always incorporated into the matrix of polymers to improve their bioactivity. However, mixing inorganic particles with polymers always results in inhomogeneity of particle distribution in polymer matrix with limited bioactivity. This study sets out to apply the pulsed laser deposition (PLD) technique to prepare uniform akermanite (Ca2MgSi2O7, AKT) glass nanocoatings on the surface of two polymers (non-degradable polysulfone (PSU) and degradable polylactic acid (PDLLA)) in order to improve their surface osteogenic and angiogenic activity. The results show that a uniform nanolayer composed of amorphous AKT particles (∼30 nm) of thickness 130 nm forms on the surface of both PSU and PDLLA films with the PLD technique. The prepared AKT-PSU and AKT-PDLLA films significantly improved the surface roughness, hydrophilicity, hardness and apatite mineralization, compared with pure PSU and PDLLA, respectively. The prepared AKT nanocoatings distinctively enhance the alkaline phosphate (ALP) activity and bone-related gene expression (ALP, OCN, OPN and Col I) of bone-forming cells on both PSU and PDLLA films. Furthermore, AKT nanocoatings on two polymers improve the attachment, proliferation, VEGF secretion and expression of proangiogenic factors and their receptors of human umbilical vein endothelial cells (HUVEC). The results suggest that PLD-prepared bioceramic nanocoatings are very useful for enhancing the physicochemical, osteogenic and angiogenic properties of both degradable and non-degradable polymers for application in bone replacement/regeneration.

  8. EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E.; Bellarmine, F.; Ramanjaneyulu, M.; Lamberti, Carlo; Ramachandra Rao, M. S.

    2013-09-01

    Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni0 nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

  9. Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

    NASA Astrophysics Data System (ADS)

    Hullavarad, S. S.; Vispute, R. D.; Nagaraj, B.; Kulkarni, V. N.; Dhar, S.; Venkatesan, T.; Jones, K. A.; Derenge, M.; Zheleva, T.; Ervin, M. H.; Lelis, A.; Scozzie, C. J.; Habersat, D.; Wickenden, A. E.; Currano, L. J.; Dubey, M.

    2006-04-01

    In this paper we report recent advances in pulsed-laser-deposited AIN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO2/Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/SiO2/Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5-0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited

  10. Laser pulse sampler

    DOEpatents

    Vann, Charles

    1998-01-01

    The Laser Pulse Sampler (LPS) measures temporal pulse shape without the problems of a streak camera. Unlike the streak camera, the laser pulse directly illuminates a camera in the LPS, i.e., no additional equipment or energy conversions are required. The LPS has several advantages over streak cameras. The dynamic range of the LPS is limited only by the range of its camera, which for a cooled camera can be as high as 16 bits, i.e., 65,536. The LPS costs less because there are fewer components, and those components can be mass produced. The LPS is easier to calibrate and maintain because there is only one energy conversion, i.e., photons to electrons, in the camera.

  11. Laser pulse sampler

    DOEpatents

    Vann, C.

    1998-03-24

    The Laser Pulse Sampler (LPS) measures temporal pulse shape without the problems of a streak camera. Unlike the streak camera, the laser pulse directly illuminates a camera in the LPS, i.e., no additional equipment or energy conversions are required. The LPS has several advantages over streak cameras. The dynamic range of the LPS is limited only by the range of its camera, which for a cooled camera can be as high as 16 bits, i.e., 65,536. The LPS costs less because there are fewer components, and those components can be mass produced. The LPS is easier to calibrate and maintain because there is only one energy conversion, i.e., photons to electrons, in the camera. 5 figs.

  12. Laser pulse detector

    DOEpatents

    Mashburn, Douglas N.; Akerman, M. Alfred

    1981-01-01

    A laser pulse detector is provided which is small and inexpensive and has the capability of detecting laser light of any wavelength with fast response (less than 5 nanoseconds rise time). The laser beam is focused onto the receiving end of a graphite rod coaxially mounted within a close-fitting conductive, open-end cylindrical housing so that ablation and electric field breakdown of the resulting plasma occurs due to a bias potential applied between the graphite rod and housing. The pulse produced by the breakdown is transmitted through a matched impedance coaxial cable to a recording device. The cable is connected with its central lead to the graphite rod and its outer conductor to the housing.

  13. Laser pulse detector

    DOEpatents

    Mashburn, D.N.; Akerman, M.A.

    1979-08-13

    A laser pulse detector is provided which is small and inexpensive and has the capability of detecting laser light of any wavelength with fast response (less than 5 nanoseconds rise time). The laser beam is focused onto the receiving end of a graphite rod coaxially mounted within a close-fitting conductive, open-end cylindrical housing so that ablation and electric field breakdown of the resulting plasma occurs due to a bias potential applied between the graphite rod and housing. The pulse produced by the breakdown is transmitted through a matched impedance coaxial cable to a recording device. The cable is connected with its central lead to the graphite rod and its outer conductor to the housing.

  14. Effect of oxygen partial pressure on microstructural and optical properties of titanium oxide thin films prepared by pulsed laser deposition

    SciTech Connect

    Balakrishnan, G.; Bandi, Vengala Rao; Rajeswari, S.M.; Balamurugan, N.; Babu, R. Venkatesh; Song, J.I.

    2013-11-15

    Graphical abstract: - Highlights: • Microstructural and optical properties are studied systematically. • The optical properties are studied by UV–visible and photoluminescence. • The PL spectra shows two peaks correspond to bandgap of anatase and rutile. • The maximum refractive index of 2.73 is obtained for rutile phase of titania. - Abstract: Nanocrystalline titanium oxide (TiO{sub 2}) thin films were deposited on silicon (1 0 0) and quartz substrates at various oxygen partial pressures (1 × 10{sup −5} to 3.5 × 10{sup −1} mbar) with a substrate temperature of 973 K by pulsed laser deposition. The microstructural and optical properties were characterized using Grazing incidence X-ray diffraction, atomic force microscopy, UV–visible spectroscopy and photoluminescence. The X-ray diffraction studies indicated the formation of mixed phases (anatase and rutile) at higher oxygen partial pressures (3.5 × 10{sup −2} to 3.5 × 10{sup −1} mbar) and strong rutile phase at lower oxygen partial pressures (1 × 10{sup −5} to 3.5 × 10{sup −3} mbar). The atomic force microscopy studies showed the dense and uniform distribution of nanocrystallites. The root mean square surface roughness of the films increased with increasing oxygen partial pressures. The UV–visible studies showed that the bandgap of the films increased from 3.20 eV to 3.60 eV with the increase of oxygen partial pressures. The refractive index was found to decrease from 2.73 to 2.06 (at 550 nm) as the oxygen partial pressure increased from 1.5 × 10{sup −4} mbar to 3.5 × 10{sup −1} mbar. The photoluminescence peaks were fitted to Gaussian function and the bandgap was found to be in the range ∼3.28–3.40 eV for anatase and 2.98–3.13 eV for rutile phases with increasing oxygen partial pressure from 1 × 10{sup −5} to 3.5 × 10{sup −1} mbar.

  15. Surface Chemistry, Friction, and Wear Properties of Untreated and Laser-Annealed Surfaces of Pulsed-Laser-Deposited WS(sub 2) Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wheeler, Donald R.; Zabinski, Jeffrey S.

    1996-01-01

    An investigation was conducted to examine the surface chemistry, friction, and wear behavior of untreated and annealed tungsten disulfide (WS2) coatings in sliding contact with a 6-mm-diameter 440C stainless-steel ball. The WS2 coatings and annealing were performed using the pulsed-laser-deposition technique. All sliding friction experiments were conducted with a load of 0.98 N (100 g), an average Hertzian contact pressure of 0.44 GPa, and a constant rotating speed of 120 rpm. The sliding velocity ranged from 31 to 107 mm/s because of the range of wear track radii involved in the experiments. The experiment was performed at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7X(exp -10) Pa), dry nitrogen (relative humidity, less than 1 percent), and humid air (relative humidity, 15 to 40 percent). Analytical techniques, including scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), x-ray photo electron spectroscopy (XPS), surface profilometry, and Vickers hardness testing, were used to characterize the tribological surfaces of WS2 coatings. The results of the investigation indicate that the laser annealing decreased the wear of a WS2 coating in an ultrahigh vacuum. The wear rate was reduced by a factor of 30. Thus, the laser annealing increased the wear life and resistance of the WS2 coating. The annealed WS 2 coating had a low coefficient of friction (less than O.1) and a low wear rate ((10(exp -7) mm(exp 3)/N-m)) both of which are favorable in an ultrahigh vacuum.

  16. Pulsed Laser Deposition of BaCe(sub 0.85)Y(sub 0.15)0(sub 3) FILMS

    NASA Technical Reports Server (NTRS)

    Dynys, F. W.; Sayir, A.

    2006-01-01

    Pulsed laser deposition has been used to grow nanostructured BaCe(sub 0.85)Y(sub 0.15)0(sub 3) films. The objective is to enhance protonic conduction by reduction of membrane thickness. Sintered samples and laser targets were prepared by sintering BaCe(sub 0.85)Y(sub 0.15)O(sub 3) powders derived by solid state synthesis. Films 2 to 6 m thick were deposited by KrF excimer laser on Si and porous Al2O3 substrates. Nanocrystalline films were fabricated at deposition temperatures of 600-800 C deg at O2 pressure of 30 mTorr and laser fluence of 1.2 J/cm square. Films were characterized by x-ray diffraction, scanning electron microscopy and electrical impedance spectroscopy. Dense single phase BaCe(sub 0.85)Y((sub 0.15) 0(sub 3) films with a columnar growth morphology is observed, preferred crystal growth was found to be dependent upon deposition temperature and substrate type. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C deg to 900 C deg in moist argon. Electrical conduction of the fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples. With respect to the film growth direction, activation energy for electrical conduction is 3 times higher in the perpendicular direction than the parallel direction.

  17. Pulsed-laser deposition and growth studies of Bi{sub 3}Fe{sub 5}O{sub 12} thin films

    SciTech Connect

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-12-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi{sub 3}Fe{sub 5}O{sub 12} (BIG) thin films on (100) and (111) Gd{sub 3}Ga{sub 5}O{sub 12} substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films.

  18. Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

    NASA Astrophysics Data System (ADS)

    Lee, Daeho; Pan, Heng; Ko, Seung Hwan; Park, Hee K.; Kim, Eunpa; Grigoropoulos, Costas P.

    2012-04-01

    A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75×10-2 Ω cm, exhibiting a factor of 105 higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors.

  19. Pulsed laser deposition of CdSe Quantum dots on Zn2SnO4 nanowires and their photovoltaic applications.

    PubMed

    Dai, Qilin; Chen, Jiajun; Lu, Liyou; Tang, Jinke; Wang, Wenyong

    2012-08-08

    In this work we report a physical deposition-based, one-step quantum dot (QD) synthesis and assembly on ternary metal oxide nanowires for photovoltaic applications. Typical solution-based synthesis of colloidal QDs for QD sensitized solar cells involves nontrivial ligand exchange processing and toxic wet chemicals, and the effect of the ligands on carrier transport has not been fully understood. In this research using pulsed laser deposition, CdSe QDs were coated on Zn(2)SnO(4) nanowires without ligand molecules, and the coverage could be controlled by adjusting the laser fluence. Growth of QDs in dense nanowire network structures was also achieved, and photovoltaic cells fabricated using this method exhibited promising device performance. This approach could be further applied for the assembly of QDs where ligand exchange is difficult and could possibly lead to reduced fabrication cost and improved device performance.

  20. An investigation of localised surface plasmon resonance (LSPR) of Ag nanoparticles produced by pulsed laser deposition (PLD) technique

    NASA Astrophysics Data System (ADS)

    Gezgin, Serap Yiǧit; Kepceoǧlu, Abdullah; Kılıç, Hamdi Şükür

    2017-02-01

    Noble metal nano-structures such as Ag, Cu, Au are used commonly to increase power conversion efficiency of the solar cell by using their surface plasmons. The plasmonic metal nanoparticles of Ag among others that have strong LSPR in near UV range. They increase photon absorbance via embedding in the active semiconductor of the solar cell. Thin films of Ag are grown in the desired particle size and interparticle distance easily and at low cost by PLD technique. Ag nanoparticle thin films were grown on micro slide glass at 25-36 mJ laser pulse energies under by PLD using ns-Nd:YAG laser. The result of this work have been presented by carrying out UV-VIS and AFM analysis. It was concluded that a laser energy increases, the density and size of Ag-NPs arriving on the substrate increases, and the interparticle distance was decreases. Therefore, LSPR wavelength shifts towards to longer wavelength region.

  1. Chemical nature of colossal dielectric constant of CaCu3Ti4O12 thin film by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; Xanthopoulos, Nicolas; Muralt, Paul

    2008-04-01

    Epitaxial CaCu3Ti4O12 thin films grown by pulsed laser deposition were studied in the as-deposited and oxygen annealed state. The first one exhibited the usual transition from dielectric to colossal dielectric behavior upon increasing the temperature to above 100K. This transition disappeared after annealing at 900°C in air. The two states significantly differ in their x-ray photoelectron spectra. The state of colossal dielectric constant corresponds to a bulk material with considerable amounts of Cu + and Ti3+, combined with Cu species enrichment at the surface. The annealed state exhibited a nearly stoichiometric composition with no Cu+ and Ti3+. The previously observed p-type conduction in the as-deposited state is thus related to oxygen vacancies compensated by the point defects of Cu+ and Ti3+.

  2. Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

  3. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  4. Microwave characterization of nanostructured ferroelectric Ba(0.6)Sr(0.4)TiO(3) thin films fabricated by pulsed laser deposition.

    PubMed

    Campbell, Angela L; Biggers, Rand R; Subramanyam, Guru; Kozlowski, Gregory; Kleismit, Richard A; Zate, Hollie N; Hopkins, Simon C; Glowacki, Bartek A; Riehl, Bonnie D; Peterson, Timothy L

    2008-12-03

    A series of nanostructured ferroelectric thin films of barium strontium titanate were fabricated using a pulsed laser deposition system with real-time in situ process control. Pulsed laser deposition parameters were controlled during the growth of nanostructured thin films for use in the development of high frequency tunable microwave devices. The thin films were all grown at the same substrate temperature and laser beam energy density, but the chamber oxygen partial pressure (COPP) was varied systematically from 19 mTorr through 1000 Torr. Structural and electromagnetic characterization was performed using atomic force microscopy and evanescent microwave microscopy, respectively. Atomic force microscopy showed a linear increase in grain size with increases in the ambient oxygen pressure from 38 to 150 mTorr and from 300 mTorr to 1000 Torr. The correlation of the microwave properties with the epitaxial film microstructure can be attributed to stresses and polarizability in the film. Microwave characterization showed that a COPP of 75 mTorr yielded the most desirable film in terms of tunability and loss tangent over a wide frequency range.

  5. Adjusting island density and morphology of the SrTiO3(110)-(4 × 1) surface: Pulsed laser deposition combined with scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Gerhold, Stefan; Riva, Michele; Yildiz, Bilge; Schmid, Michael; Diebold, Ulrike

    2016-09-01

    The first stages of homoepitaxial growth of the (4 × 1) reconstructed surface of SrTiO3(110) are probed by a combination of pulsed laser deposition (PLD) with in-situ reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Considerations of interfacing high-pressure PLD growth with ultra-high-vacuum surface characterization methods are discussed, and the experimental setup and procedures are described in detail. The relation between RHEED intensity oscillations and ideal layer-by-layer growth is confirmed by analysis of STM images acquired after deposition of sub-monolayer amounts of SrTiO3. For a quantitative agreement between RHEED and STM results one has to take into account two interfaces: the steps at the circumference of islands, as well as the borders between two different reconstruction phases on the islands themselves. Analysis of STM images acquired after one single laser shot reveals an exponential decrease of the island density with increasing substrate temperature. This behavior is also directly visible from the temperature dependence of the relaxation times of the RHEED intensity. Moreover, the aspect ratio of islands changes considerably with temperature. The growth mode depends on the laser pulse repetition rate, and can be tuned from predominantly layer-by-layer to the step-flow growth regime.

  6. Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition of carbon onto Si wafers

    NASA Astrophysics Data System (ADS)

    Rimai, L.; Ager, R.; Weber, W. H.; Hangas, J.; Poindexter, B. D.

    1994-10-01

    It is demonstrated that SiC films can be deposited epitaxially on [001] and [111] Si wafers by excimer laser ablation of just a carbon target, in vacuum, at deposition temperatures as low as 1100 °C. Diffraction studies show that the SiC films have the same crystalline orientation as the substrates. The film growth on the Si substrate to thicknesses as large as 4000 Å with no significant excess carbon indicates that in addition to reaction of the carbon in the plume with Si of the substrate, there is transport of Si within the SiC film. For continued deposition beyond this thickness a carbon layer will form.

  7. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

    SciTech Connect

    Sun, J.; Wu, A.M.; Xu, N.; Ying, Z.F.; Shen, X.K.; Dong, Z.B.; Wu, J.D.; Shi, L.Q.

    2005-11-15

    Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38 eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed.

  8. Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    NASA Astrophysics Data System (ADS)

    Matei, Andreea; Marinescu, Maria; Constantinescu, Catalin; Ion, Valentin; Mitu, Bogdana; Ionita, Iulian; Dinescu, Maria; Emandi, Ana

    2016-06-01

    We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm2. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60-100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films' thickness.

  9. Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: EuTiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Wang, Huan-Hua; Fleet, Aaron; Brock, J. D.; Dale, Darren; Suzuki, Yuri

    2004-11-01

    High-quality epitaxial thin films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two dimensional and enable real-time monitoring of the film thickness and roughness during growth. The film thickness, surface mosaic, surface roughness, and strain were characterized in detail by using ex situ x-ray diffraction. The thickness and composition were confirmed with Rutherford backscattering spectroscopy. The EuTiO3 thin films grow two dimensionally, epitaxially, and pseudomorphically, with no measurable in-plane lattice mismatch.

  10. Optical properties of Ag nanoparticles embedded Ba0.5Sr0.5TiO3 films prepared by alternating pulsed laser deposition.

    PubMed

    Kim, Ji-Suk; Lee, Kyeong-Seok; Kim, Sang Sub

    2006-11-01

    Nanocomposite thin films consisting of nanometer-sized Ag particles embedded in amorphous Ba0.5Sr0.5TiO3 matrix were prepared on fused silica substrates by an alternating pulsed laser deposition method. Their optical nonlinearities have been studied using the Z-scan method. The surface plasmon resonance (SPR) peak shifts to red and increases with the increasing the volume fraction of Ag in the nanocomposite films. The magnitude of the third-order nonlinear susceptibility of the nanocomposite with an Ag volume fraction of 3.3% was calculated to be approximately 2 x 10(-8) esu at the SPR wavelength.

  11. Magnetic and electric properties of Ru-substituted CoFe2O4 thin films fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Iwamoto, Fujiyuki; Seki, Munetoshi; Tabata, Hitoshi

    2012-11-01

    Epitaxial thin films of Ru-substituted CoFe2O4 with a cubic spinel structure were fabricated on α-Al2O3 (001) substrates using pulsed laser deposition, and their magnetic and electric properties were investigated. The films showed room temperature ferrimagnetic behavior with hard magnetic features similar to those of non-Ru-substituted cobalt ferrite films. The electrical conductivity of the films was dramatically enhanced by the substitution of Ru. The anomalous Hall effect was observed in all films even at 300 K suggesting that carriers in the films are highly spin-polarized at room temperature as expected from a first-principles calculation.

  12. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

    NASA Astrophysics Data System (ADS)

    Patil, Ranjit A.; Wei, Mao-Kuo; Yeh, P.-H.; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-01

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes

  13. Laser beam pulse formatting method

    DOEpatents

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  14. Micro pulse laser radar

    NASA Technical Reports Server (NTRS)

    Spinhirne, James D. (Inventor)

    1993-01-01

    An eye safe, compact, solid state lidar for profiling atmospheric cloud and aerosol scattering is disclosed. The transmitter of the micro pulse lidar is a diode pumped micro-J pulse energy, high repetition rate Nd:YLF laser. Eye safety is obtained through beam expansion. The receiver employs a photon counting solid state Geiger mode avalanche photodiode detector. Data acquisition is by a single card multichannel scaler. Daytime background induced quantum noise is controlled by a narrow receiver field-of-view and a narrow bandwidth temperature controlled interference filter. Dynamic range of the signal is limited to optical geometric signal compression. Signal simulations and initial atmospheric measurements indicate that micropulse lider systems are capable of detecting and profiling all significant cloud and aerosol scattering through the troposphere and into the stratosphere. The intended applications are scientific studies and environmental monitoring which require full time, unattended measurements of the cloud and aerosol height structure.

  15. Nanoporous Ni-Ce0.8Gd0.2O1.9-x thin film cermet SOFC anodes prepared by pulsed laser deposition.

    PubMed

    Infortuna, Anna; Harvey, Ashley S; Muecke, Ulrich P; Gauckler, Ludwig J

    2009-05-21

    Nickel oxide-gadolinia-doped ceria thin films with a ceria composition of 80 at% Ce and 20 at% Gd were grown by pulsed laser deposition on sapphire and SiO2/Si wafers as well as on yttria stabilized zirconia polycrystalline substrates. Upon reduction of the NiO phase in a H2/N2 atmosphere at 600 degrees C, a stable three-phase, 3-D interconnecting microstructure was obtained of metallic Ni, ceramic, and pores. Coarsening and segregation of the Ni to the surface of the film was observed at higher temperatures. The kinetics of this process depend strongly on the microstructures that can be developed in situ during deposition or post-deposition heat treatments. In situ minimization of Ni-coarsening can be achieved at temperatures as low as 500 degrees C when the deposition pressure does not exceed 0.02 mbar. For films deposited at higher pressure and at temperatures below 800 degrees C, coarsening can be minimized post deposition by annealing in air at 1000 degrees C. The films showed very good metallic conductivity and stability upon thermal cycling in a reducing atmosphere. Redox cycles performed at 600 degrees C between air and H2 induced a loss of connectivity of the metallic phase and consequent degradation of the conductivity. After 16 cycles, corresponding to 65 hrs, the conductivity is reduced by one order of magnitude.

  16. Organic-inorganic nano-composite films for photonic applications made by multi-beam multi-target pulsed laser deposition with remote control of the plume directions

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Moore, Shaelynn; Mohammed, Aziz; Alexander, Deonte'; Bastian, Tyler; Dorlus, Wydglif; Sarkisov, Sergey S.; Patel, Darayas N.; Mele, Paolo; Koplitz, Brent

    2016-09-01

    There has been an explosive interest in the technique of laser assisted deposition of polymer nano-composite films exploiting the matrix assisted pulsed laser evaporation (MAPLE) with regard to the polymer host as can be judged form recent publications.1-4 In MAPLE, a frozen solution of a polymer in a relatively volatile solvent is used as a laser target. The solvent and concentration are selected so that first, the polymer of interest can dissolve to form a dilute, particulate free solution, second, the majority of the laser energy is initially absorbed by the solvent molecules and not by the solute molecules, and third, there is no photochemical reaction between the solvent and the solute. The light-material interaction in MAPLE can be described as a photothermal process. The photon energy absorbed by the solvent is converted to thermal energy that causes the polymer to be heated but the solvent to vaporize. As the surface solvent molecules are evaporated into the gas phase, polymer molecules are exposed at the gas-target matrix interface. The polymer molecules attain sufficient kinetic energy through collective collisions with the evaporating solvent molecules, to be transferred into the gas phase. By careful optimization of the MAPLE deposition conditions (laser wavelength, repetition rate, solvent type, concentration, temperature, and background gas and gas pressure), this process can occur without any significant polymer decomposition. The MAPLE process proceeds layer-by-layer, depleting the target of solvent and polymer in the same concentration as the starting matrix. When a substrate is positioned directly in the path of the plume, a coating starts to form from the evaporated polymer molecules, while the volatile solvent molecules are evacuated by the pump from the deposition chamber. In case of fabrication of polymer nanocomposites, MAPLE targets are usually prepared as nano-colloids of the additives of interest in the initial polymer solutions. Mixing

  17. Cantilever stress measurements for pulsed laser deposition of perovskite oxides at 1000 K in an oxygen partial pressure of 10{sup −4} millibars

    SciTech Connect

    Premper, J.; Sander, D.; Kirschner, J.

    2015-03-15

    An in situ stress measurement setup using an optical 2-beam curvature technique is described which is compatible with the stringent growth conditions of pulsed laser deposition (PLD) of perovskite oxides, which involves high substrate temperatures of 1000 K and oxygen partial pressures of up to 1 × 10{sup −4} millibars. The stress measurements are complemented by medium energy electron diffraction (MEED), Auger electron spectroscopy, and additional growth rate monitoring by a quartz microbalance. A shielded filament is used to allow for simultaneous stress and MEED measurements at high substrate temperatures. A computer-controlled mirror scans an excimer laser beam over a stationary PLD target. This avoids mechanical noise originating from rotating PLD targets, and the setup does not suffer from limited lifetime issues of ultra high vacuum (UHV) rotary feedthroughs.

  18. Thickness-dependent optical properties in compressively strained BiFeO{sub 3}/LaAlO{sub 3} films grown by pulsed laser deposition

    SciTech Connect

    Duan, Zhihua; Jiang, Kai; Wu, Jiada; Sun, Jian; Hu, Zhigao; Chu, Junhao

    2014-03-01

    Graphical abstract: - Highlights: • BFO with various thicknesses was grown on LAO substrates by pulsed laser deposition. • The structure and compressive strains were clarified via Raman scattering. • The charge transfer excitation was blue shifted with increasing compressive strain. • The compressive strain affects the distortion of Fe{sup 3+} local environment and O 2p states. - Abstract: Bismuth ferrite (BiFeO{sub 3}) films with various thicknesses were epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The X-ray diffraction and Raman scattering spectra reveal that the films were highly (11{sup ¯}1) oriented with the single phase. With increasing the thickness, the compressive strain decreases and the strain ratios between the film and bulk crystal are evaluated to be 1.75, 1.57, and 1. Moreover, the compressive strain induces band gap shrinkage from 2.7 to 2.65 eV, while the charge transfer transition energy increases from 3.5 to 4.1 eV. It could be due to the shift of O 2p states and the variation of local Fe{sup 3+} crystal field.

  19. Effect of oxygen partial pressure on structural and optical properties of pulsed laser deposited CaBi4Ti4O15 thin films

    NASA Astrophysics Data System (ADS)

    Emani, Sivanagi Reddy; Raju, K. C. James

    2017-03-01

    The influence of oxygen partial pressure (OPP) on the structural and optical properties of CaBi4Ti4O15 (CBTi) thin films deposited by pulsed laser deposition have been investigated in the range of 0.1 mbar to 7.8 × 10-3 mbar. The structural properties show all the films are polycystlline in nature with orthorombic structure. The optical transmission of the films is in the range of 60-90%. A slight shift in transmission threshold towards higher wavelength region with an increase in O2 pressure reveals the systematic reduction in the optical band gap energy (3.69 to 3.59 eV) of the films. Raman studies confirm the phase formation and presence of stresses in the films. It is suggested that the OPP played a key role in controlling crystallinity, morphology, chemical composition and optical properties in CBTi thin films.

  20. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

    SciTech Connect

    Skuza, J. R. E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K. E-mail: apradhan@nsu.edu

    2015-11-21

    We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

  1. Increased grain boundary critical current density Jcgb by Pr-doping in pulsed laser-deposited Y1-xPrxBCO thin films

    NASA Astrophysics Data System (ADS)

    Irjala, M.; Huhtinen, H.; Awana, V. P. S.; Falter, M.; Paturi, P.

    2011-12-01

    A comparative study has been performed on Pr-doped Y1-x PrxBCO (x =0-0.20) thin films deposited by pulsed laser deposition on MgO and buffered NiW substrates to study the effect of Pr-doping on the grain boundary critical current density (Jcgb). Our earlier work on bulk materials and SrTiO3 substrates indicated that, whereas Pr increases Jc in bulk samples, it does not increase Jc in film samples without grain boundaries. In this work, we present increased Jc in low concentrations of Pr3+-doping (x < 0.04) at temperatures above 60 K in film samples on MgO substrates and at all temperatures and fields in film samples on buffered NiW substrates. Results indicate that Pr segregates into grain boundary regions, improving the local hole concentration and carrier density, hence, increasing Jcgb.

  2. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Tataroğlu, A.; El Mir, L.; Al-Ghamdi, Ahmed A.; Dahman, H.; Farooq, W. A.; Yakuphanoğlu, F.

    2016-04-01

    The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

  3. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    PubMed

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  4. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

    SciTech Connect

    Devi, Vanita; Kumar, Ravindra; Joshi, B. C.; Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2015-06-14

    The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.

  5. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence.

    PubMed

    Patil, Ranjit A; Wei, Mao-Kuo; Yeh, P-H; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-14

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).

  6. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    SciTech Connect

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul; Wiedwald, Ulf

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  7. High power ultrashort pulse lasers

    SciTech Connect

    Perry, M.D.

    1994-10-07

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced.

  8. Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties

    NASA Astrophysics Data System (ADS)

    Martín-Sánchez, J.; Capan, I.; Chahboun, A.; Pinto, S. R. C.; Vieira, E. M. F.; Rolo, A. G.; Gomes, M. J. M.

    2013-09-01

    In this work, a novel customized shadowed off-axis deposition set-up is used to perform an original study of Ge nanoparticles (NPs) formation in an inert Ar gas atmosphere by pulsed laser deposition at room temperature varying systematically the background Ar gas pressure (Pbase(Ar)), target-substrate distance (d) and laser repetition rate (f). The influence of these parameters on the final NPs size distributions is investigated and a fairly uniform droplets-free and non-agglomerated NPs distribution with average height = 2.8 ± 0.6 nm is obtained for optimized experimental conditions (Pbase(Ar) = 1 mbar; d = 3 cm; f = 10 Hz) with a fine control in the NPs density (from 3.2 × 109 cm-2 to 1.1 × 1011 cm-2). The crystalline quality of as-deposited NPs investigations demonstrate a strong dependence with the Ar gas pressure and a crystalline to amorphous phase volume fraction χc > 50% is found for Pbase(Ar) = 2 mbar. The NPs functionality for charge trapping applications has been successfully demonstrated by capacitance-voltage (C-V) electrical measurements.

  9. Influence of RF excitation during pulsed laser deposition in oxygen atmosphere on the structural properties and luminescence of nanocrystalline ZnO:Al thin films

    SciTech Connect

    Meljanac, Daniel Plodinec, Milivoj; Siketić, Zdravko; Gracin, Davor; Juraić, Krunoslav; Bernstorff, Sigrid

    2016-03-15

    Thin ZnO:Al layers were deposited by pulsed laser deposition in vacuum and in oxygen atmosphere at gas pressures between 10 and 70 Pa and by applying radio-frequency (RF) plasma. Grazing incidence small angle x-ray scattering and grazing incidence x-ray diffraction (GIXRD) data showed that an increase in the oxygen pressure leads to an increase in the roughness, a decrease in the sample density, and changes in the size distribution of nanovoids. The nanocrystal sizes estimated from GIXRD were around 20 nm, while the sizes of the nanovoids increased from 1 to 2 nm with the oxygen pressure. The RF plasma mainly influenced the nanostructural properties and point defects dynamics. The photoluminescence consisted of three contributions, ultraviolet (UV), blue emission due to Zn vacancies, and red emission, which are related to an excess of oxygen. The RF excitation lowered the defect level related to blue emission and narrowed the UV luminescence peak, which indicates an improvement of the structural ordering. The observed influence of the deposition conditions on the film properties is discussed as a consequence of two main effects: the variation of the energy transfer from the laser plume to the growing film and changes in the growth chemistry.

  10. Stoichiometry of LaAlO{sub 3} films grown on SrTiO{sub 3} by pulsed laser deposition

    SciTech Connect

    Golalikhani, M.; Lei, Q. Y.; Xi, X. X.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.

    2013-07-14

    We have studied the stoichiometry of epitaxial LaAlO{sub 3} thin films on SrTiO{sub 3} substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction ({theta}-2{theta} scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO{sub 3} film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10{sup -2} Torr. We conclude that the discussion of LaAlO{sub 3}/SrTiO{sub 3} interfacial properties should include the effects of cation off-stoichiometry in the LaAlO{sub 3} films when the deposition is conducted under low oxygen pressures.

  11. Antiresorption implant coatings based on calcium alendronate and octacalcium phosphate deposited by matrix assisted pulsed laser evaporation.

    PubMed

    Boanini, Elisa; Torricelli, Paola; Forte, Lucia; Pagani, Stefania; Mihailescu, Natalia; Ristoscu, Carmen; Mihailescu, Ion N; Bigi, Adriana

    2015-12-01

    The integration of an implant material with bone tissue depends on the chemistry and physics of the implant surface. In this study we applied matrix assisted pulsed laser evaporation (MAPLE) in order to synthesize calcium alendronate monohydrate (a bisphosphonate obtained by calcium sequestration from octacalcium phosphate by alendronate) and calcium alendronate monohydrate/octacalcium phosphate composite thin films on titanium substrates. Octacalcium phosphate coatings were prepared as reference material. The powders, which were synthesized in aqueous medium, were suspended in deionised water, frozen at liquid nitrogen temperature and used as targets for MAPLE experiments. The transfer was conducted with a KrF* excimer laser source (λ = 248 nm, τFWHM ≤ 25 ns) in mild conditions of temperature and pressure. XRD, FTIR and SEM analyses confirmed that the coatings contain the same crystalline phases as the as-prepared powder samples. Osteoblast derived from stem cells and osteoclast derived from monocytes of osteoporotic subjects were co-cultured on the coatings up to 14 days. Osteoclast displayed significantly reduced proliferation and differentiation in the presence of calcium alendronate monohydrate, pointing to a clear role of the coatings containing this bisphosphonate on inhibiting excessive bone resorption. At variance, osteoblast production of alkaline phosphatase and type I pro-collagen were promoted by the presence of bisphosphonate, which also decreased the production of interleukin 6. The positive influence towards osteoblast differentiation was even more enhanced in the composite coatings, thanks to the presence of octacalcium phosphate.

  12. Laser system using ultra-short laser pulses

    DOEpatents

    Dantus, Marcos; Lozovoy, Vadim V.; Comstock, Matthew

    2009-10-27

    A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

  13. High-power pulsed lasers

    SciTech Connect

    Holzrichter, J.F.

    1980-04-02

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization.

  14. Large-area, two-sided superconducting YBa sub 2 Cu sub 3 O sub 7 minus x films deposited by pulsed laser deposition

    SciTech Connect

    Foltyn, S.R.; Muenchausen, R.E.; Dye, R.C.; Wu, X.D.; Luo, L.; Cooke, D.W. ); Taber, R.C. )

    1991-09-09

    The {ital in} {ital situ} excimer-laser deposition process is demonstrated, for the first time, to be an effective technique for producing superconducting films on both sides of substrate wafers of up to 5 cm in diameter. By exploiting the directed nature of the laser produced plume and controlling its off-axis composition, thickness and stoichiometric variations of less than {plus minus}5% have been obtained over the entire surface. Coatings on 5-cm-diam LaAlO{sub 3} substrates have uniform transition temperatures of {ge} (R18)90 K on both sides, with a critical current density at 77 K and zero field of 2.5{times}10{sup 6} A/cm{sup 2}. The 10 GHz surface resistance for samples cut from a 5 cm wafer is 40--60 {mu}{Omega} at 4 K.

  15. Pressure effect on the magnetization of Sr{sub 2}FeMoO{sub 6} thin films grown by pulsed laser deposition

    SciTech Connect

    Fix, T.; Versini, G.; Loison, J.L.; Colis, S.; Schmerber, G.; Pourroy, G.; Dinia, A.

    2005-01-15

    Thin films of Sr{sub 2}FeMoO{sub 6} (SFMO) are grown on SrTiO{sub 3} (001) substrates by pulsed laser deposition. The best films provide 3.2{mu}{sub B}/f.u. at 5 K, a Curie temperature above 400 K, low roughness, high crystallinity, and low splashing. Therefore, the use of such SFMO electrodes in magnetic tunnel junctions patterned with conventional lithography is promising. Pseudomorphic epitaxial growth is obtained for thicknesses under 50 nm. Above this thickness the films do not relax homogeneously. A coherent and systematic variation of the magnetization with the deposition conditions is obtained, which highlights a high reproducibility. Under a reasonable O{sub 2} partial pressure to avoid parasite phases, the limiting factor for high magnetization is the total pressure or the deposition rate. Therefore, the deposition rate is suspected to have a strong influence on the Fe/Mo ordering. Highly magnetic samples are obtained under a low gas flow of either a 20% O{sub 2}+N{sub 2} or a 0.3% O{sub 2}+Ar.

  16. Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

    SciTech Connect

    Liu, S.; Ma, B.; Narayanan, M.; Balachandran, U.

    2012-01-01

    Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 x 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.

  17. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Wang, Haiyan; Wen, Lei; Li, Guoqiang

    2015-01-01

    High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates. PMID:26089026

  18. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Silva, J. P. B.; Sekhar, K. C.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2013-11-01

    The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage ( C- V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

  19. Pulsed laser deposition of CuInS2 quantum dots on one-dimensional TiO2 nanorod arrays and their photoelectrochemical characteristics

    NASA Astrophysics Data System (ADS)

    Han, Minmin; Chen, Wenyuan; Guo, Hongjian; Yu, Limin; Li, Bo; Jia, Junhong

    2016-06-01

    In the typical solution-based synthesis of colloidal quantum dots (QDs), it always resorts to some surface treatment, ligand exchange processing or post-synthesis processing, which might involve some toxic chemical regents injurious to the performance of QD sensitized solar cells. In this work, the CuInS2 QDs are deposited on the surface of one-dimensional TiO2 nanorod arrays by the pulsed laser deposition (PLD) technique. The CuInS2 QDs are coated on TiO2 nanorods without any ligand engineering, and the performance of the obtained CuInS2 QD sensitized solar cells is optimized by adjusting the laser energy. An energy conversion efficiency of 3.95% is achieved under one sun illumination (AM 1.5, 100 mW cm-2). The improved performance is attributed to enhanced absorption in the longer wavelength region, quick interfacial charge transfer and few chance of carrier recombination with holes for CuInS2 QD-sensitized solar cells. Moreover, the photovoltaic device exhibits high stability in air without any specific encapsulation. Thus, the PLD technique could be further applied for the fabrication of QDs or other absorption materials.

  20. Epitaxial Ba{sub 2}IrO{sub 4} thin-films grown on SrTiO{sub 3} substrates by pulsed laser deposition

    SciTech Connect

    Nichols, J. Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-03-24

    We have synthesized epitaxial Ba{sub 2}IrO{sub 4} (BIO) thin-films on SrTiO{sub 3} (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr{sub 2}IrO{sub 4}. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

  1. Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lin, Y.; Chen, Y. B.; Garret, T.; Liu, S. W.; Chen, C. L.; Chen, L.; Bontchev, R. P.; Jacobson, A.; Jiang, J. C.; Meletis, E. I.; Horwitz, J.

    2002-07-01

    High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO)//(001LAO and 100]CCTO//[100LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film.

  2. Influence of oxygen pressure and aging on LaAlO{sub 3} films grown by pulsed laser deposition on SrTiO{sub 3} substrates

    SciTech Connect

    Park, Jihwey; Aeppli, Gabriel; Soh, Yeong-Ah; David, Adrian; Lin, Weinan; Wu, Tom

    2014-02-24

    The crystal structures of LaAlO{sub 3} films grown by pulsed laser deposition on SrTiO{sub 3} substrates at oxygen pressure of 10{sup −3} millibars or 10{sup −5} millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO{sub 3} and SrTiO{sub 3} is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO{sub 3} layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  3. Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Razeghi, M.

    2010-03-01

    Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

  4. FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping assisted pulsed laser deposition with reduced intergranular exchange coupling

    NASA Astrophysics Data System (ADS)

    Lin, J. J.; Pan, Z. Y.; Karamat, S.; Mahmood, S.; Lee, P.; Tan, T. L.; Springham, S. V.; Rawat, R. S.

    2008-05-01

    FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping (MT) assisted pulsed laser deposition (PLD) were found to have lower transition temperature for L10 face-centred-tetragonal (fct) phase due to higher concentration of defects. The low phase transition temperature together with non-magnetic matrix materials helps to reduce grain growth and agglomeration during annealing. Small remanence ratio and coercive squareness for nanocomposite thin films annealed at 300 °C to fct phase confirm that the main intergranular interaction is magnetostatic interaction rather than exchange coupling. The MT assisted PLD can synthesize fct-FePt : Al2O3 nanocomposite thin films with reduced intergranular exchange coupling.

  5. Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition.

    PubMed

    Koehl, Annemarie; Kajewski, Dariusz; Kubacki, Jerzy; Lenser, Christian; Dittmann, Regina; Meuffels, Paul; Szot, Kristof; Waser, Rainer; Szade, Jacek

    2013-06-07

    We present an X-ray absorption spectroscopy study on Fe-doped SrTiO3 thin films grown by pulsed laser deposition. The Fe L2,3 edge spectra are recorded for doping concentrations from 0-5% after several annealing steps at moderate temperatures. The Fe valence state is determined by comparison with an ilmenite reference sample and calculations according to the charge transfer multiplet model. We found clear evidence of Fe(2+) and Fe(3+) oxidation states independently of the doping concentration. The Fe(2+) signal is enhanced at the surface and increases after annealing. The Fe(2+) configuration is in contrast to the mixed Fe(3+)/Fe(4+) valence state in bulk material and must be explained by the specific defect structure of the thin films due to the kinetically limited growth which induces a high concentration of oxygen vacancies.

  6. In-situ growth of superconducting SmO1−xFxFeAs thin films by pulsed laser deposition

    PubMed Central

    Haindl, Silvia; Hanzawa, Kota; Sato, Hikaru; Hiramatsu, Hidenori; Hosono, Hideo

    2016-01-01

    Oxypnictide thin film growth by pulsed laser deposition (PLD) is one of many insufficiently resolved issues in the research of iron-based superconductors. Here we report on the successful realization of superconducting SmO1−xFxFeAs oxypnictide thin film growth by in-situ PLD on CaF2 (fluorite) substrates. CaF2 acts as fluorine supplier by diffusion and thus enables superconducting oxypnictide thin film growth by PLD. Films are grown heteroepitaxially and characteristically have a broad resistive normal-to-superconducting transition. Best films have onset transition temperatures around 40 K. The proposed in-situ PLD film growth offers an alternative and cheap route for the fabrication of iron oxypnictides. PLD becomes now an additional option for iron oxypnictide synthesis. PMID:27767066

  7. In-situ growth of superconducting SmO1‑xFxFeAs thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haindl, Silvia; Hanzawa, Kota; Sato, Hikaru; Hiramatsu, Hidenori; Hosono, Hideo

    2016-10-01

    Oxypnictide thin film growth by pulsed laser deposition (PLD) is one of many insufficiently resolved issues in the research of iron-based superconductors. Here we report on the successful realization of superconducting SmO1‑xFxFeAs oxypnictide thin film growth by in-situ PLD on CaF2 (fluorite) substrates. CaF2 acts as fluorine supplier by diffusion and thus enables superconducting oxypnictide thin film growth by PLD. Films are grown heteroepitaxially and characteristically have a broad resistive normal-to-superconducting transition. Best films have onset transition temperatures around 40 K. The proposed in-situ PLD film growth offers an alternative and cheap route for the fabrication of iron oxypnictides. PLD becomes now an additional option for iron oxypnictide synthesis.

  8. The effect of Cr substitution on the structural, electronic and magnetic properties of pulsed laser deposited NiFe2O4 thin films

    NASA Astrophysics Data System (ADS)

    Panwar, Kalpana; Tiwari, Shailja; Bapna, Komal; Heda, N. L.; Choudhary, R. J.; Phase, D. M.; Ahuja, B. L.

    2017-01-01

    We have studied the structural, electronic and magnetic properties of pulsed laser deposited thin films of Ni1-xCrxFe2O4 (x=0.02 and 0.05) on Si (111) and Si (100) substrates. The films reveal single phase, polycrystalline structure with larger grain size on Si (111) substrate than that on Si (100) substrate. Contrary to the expected inverse spinel structure, x-ray photoemission (XPS) studies reveal the mixed spinel structure. XPS results suggest that Ni and Fe ions exist in 2+ and 3+ states, respectively, and they exist in tetrahedral as well as octahedral sites. The deviation from the inverse spinel leads to modified magnetic properties. It is observed that saturation magnetization drastically drops compared to the expected saturation value for inverse spinel structure. Strain in the films and lattice distortion produced by the Cr doping also appear to influence the magnetic properties.

  9. Sr{sub 2}MgMoO{sub 6−δ} thin films fabricated using pulsed-laser deposition with high concentrations of oxygen vacancies

    SciTech Connect

    Shigematsu, K.; Chikamatsu, A. Fukumura, T.; Toyoda, S.; Ikenaga, E.

    2014-06-30

    We fabricated epitaxial thin films of oxygen-vacant Sr{sub 2}MgMoO{sub 6−δ} using pulsed laser deposition. The films showed low resistivity of the order of 10{sup −2} Ω cm at 300 K. X-ray diffraction analyses revealed that Mg and Mo ions in the Sr{sub 2}MgMoO{sub 6−δ} films were considerably disordered, compared to those in bulk Sr{sub 2}MgMoO{sub 6−δ}. The proportion of oxygen vacancies estimated through hard x-ray photoemission measurements was as large as 0.37, and correlated well with the Mg/Mo ordering.

  10. Positive magnetoresistance in ferromagnetic Nd-doped In{sub 2}O{sub 3} thin films grown by pulse laser deposition

    SciTech Connect

    Xing, G. Z. Yi, J. B.; Li, S.; Yan, F.; Wu, T.

    2014-05-19

    We report the magnetic and magnetotransport properties of (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

  11. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).

  12. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  13. Influence of substrate temperature on the properties of pulsed laser deposited silver nanoparticle thin films and their application in SERS detection of bovine serum albumin

    NASA Astrophysics Data System (ADS)

    Kamakshi, Koppole; Silva, J. P. B.; Sekhar, K. C.; Marslin, Gregory; Moreira, J. Agostinho; Conde, O.; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    The effect of substrate temperature ( T s) on electrical conductance, surface plasmon resonance (SPR), and surface-enhanced Raman scattering (SERS) activity of silver nanoparticle (AgNP) thin films is presented. AgNP films are grown on glass substrates by pulsed laser deposition in a controlled Ar atmosphere at a pressure of 0.1 mbar and varying T s. Different T s results in different morphologies, as observed by scanning electron microscopy. The effect of interparticle distance on the electrical conductance of AgNPs is highlighted. The current-voltage characteristics display negative resistance effect and is attributed to the charge trapping process in AgNPs. The film deposited at room temperature presents a SPR peak at λ = 460 nm, and its wavelength first increases until T s reaches 300 °C and then decreases with further increasing T s. The quantitative analysis of SERS studies reveals that SERS intensity of bovine serum albumin (BSA) adsorbed on AgNP substrate deposited at 300 °C exhibits a higher intensity as compared with that of BSA adsorbed on the SERS active substrates at any other T s.

  14. Some aspects of pulsed laser deposited nanocrystalline LaB(6) film: atomic force microscopy, constant force current imaging and field emission investigations.

    PubMed

    Late, Dattatray J; Date, Kalyani S; More, Mahendra A; Misra, Pankaj; Singh, B N; Kukreja, Lalit M; Dharmadhikari, C V; Joag, Dilip S

    2008-07-02

    Nanocrystalline lanthanum hexaboride (LaB(6)) films have been deposited on molybdenum foil by the pulsed laser deposition (PLD) technique. The as-deposited films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD pattern shows the cubic crystallinity of the LaB(6) film. The AFM studies reveal that the conical shaped LaB(6) nanostructures have height 60 nm, base 800 nm, and a typical radius of curvature ∼20 nm. A comparison of force and in situ current imaging AFM studies reveals that current contrast does not originate from the surface topography of the LaB(6) film. Field emission studies have been performed in the planar diode configuration. A current density of 4.4 × 10(-2) A cm(-2) is drawn from the actual emitting area. The Fowler-Nordheim plot is found to be linear, in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor is estimated to be 3585, indicating that the field emission is from LaB(6) nanocrystallites present on the emitter surface, as confirmed by the AFM. The emission current-time plots show current stability to the extent of 5% fluctuation about the average current over a period of 3 h.

  15. Structural, XPS and magnetic studies of pulsed laser deposited Fe doped Eu{sub 2}O{sub 3} thin film

    SciTech Connect

    Kumar, Sandeep; Prakash, Ram; Choudhary, R.J.; Phase, D.M.

    2015-10-15

    Highlights: • Growth of Fe doped Eu{sub 2}O{sub 3} thin films by PLD. • XRD and Raman’s spectroscopy used for structure confirmation. • The electronic states of Eu and Fe are confirmed by XPS. • Magnetic properties reveals room temperature magnetic ordering in deposited film. - Abstract: Fe (4 at.%) doped europium (III) oxide thin film was deposited on silicon (1 0 0) substrate by pulsed laser deposition technique. Structural, spectral and magnetic properties were studied by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and magnetization measurements. XRD and Raman spectroscopy reveal that the grown film is single phased and belongs to the cubic structure of Eu{sub 2}O{sub 3}. XPS study of the Eu{sub 1.92}Fe{sub 0.08}O{sub 3} film shows that Fe exists in Fe{sup 3+} ionic state in the film. The film exhibits magnetic ordering at room temperature.

  16. Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films

    NASA Astrophysics Data System (ADS)

    Sudheendran, K.; Ghanashyam Krishna, M.; Raju, K. C. James

    2009-05-01

    Bismuth Zinc niobate (Bi1.5Zn1.0Nb1.5O7) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36-2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30-3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.

  17. Structural and electrical characterization of boron-containing diamond-like carbon films deposited by femtosecond pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Sikora, A.; Berkesse, A.; Bourgeois, O.; Garden, J.-L.; Guerret-Piécourt, C.; Rouzaud, J.-N.; Loir, A.-S.; Garrelie, F.; Donnet, C.

    2009-10-01

    The present study investigates the influence of the incorporation of boron in Diamond-Like Carbon (DLC) films deposited by femtosecond laser ablation, on the structure and electrical properties of the coatings within the temperature range 70-300 K. Doping with boron has been performed by ablating alternatively graphite and boron targets. The film structure and composition have been highlighted by coupling Atomic Force Microscopy (AFM), Scanning Electron Microscopy equipped with a field emission gun (SEM-FEG) and High Resolution Transmission Electron Microscopy (HRTEM). Boron dilution ranges between 2 and 8% and appears as nanometer size clusters embedded in the DLC matrix. Typical resistivity values are 100 W cm for pure a-C films, down to few W cm for a-C:B films at room temperature. The resistance decreases exponentially when the temperature increases in the range 70-300 K. The results are discussed considering the classical model of hopping conduction in thin films. Some coatings show temperature coefficients of resistance (TCR) as high as 3.85%. TCRs decrease when the doping increases. Such high values of TCR may have interests in the use of these films as thermometer elements in micro and nanodevices.

  18. Pulsed infrared laser ablation and clinical applications

    NASA Astrophysics Data System (ADS)

    Chan, Kin Foong

    Sufficient light energy deposited in tissue can result in ablation and excessive thermal and mechanical damage to adjacent tissues. The goals of this research are to investigate the mechanisms of pulsed infrared laser ablation of tissue, to optimize laser parameters for minimizing unnecessary damage to healthy tissue, and to explore the potential of using pulsed infrared lasers for clinical applications, especially laser lithotripsy. A dual-channel optical low coherence reflectometer was implemented to measure the expansion and collapse velocities of a Q-switched Ho:YAG (λ = 2.12 μm) laser-induced cavitation in water. Cavitation wall velocities up to 11 m/s were measured with this technique, and the results were in fair agreement with those calculated from fast-flash photographic images. The dependence of ablation threshold fluence on calculus absorption was examined. Preliminary results indicated that the product of optical absorption and ablation threshold fluence, which is the heat of ablation, remained constant for a given urinary calculus type and laser pulse duration. An extended study examined the influence of optical absorption on pulsed infrared laser ablation. An analytical photothermal ablation model was applied and compared to experimental ablation results using an infrared free-electron laser at selected wavelengths between 2.12 μm and 6.45 μm Results were in good agreement with the model, and the ablation depths of urinary calculi were highly dependent upon the calculus optical absorption as well as light attenuation within the intrapulse ablation plume. An efficient wavelength for ablation corresponded to the wavelength of the Er:YAG laser (λ = 2.94 μm) suggested this laser should be examined for laser lithotripsy. Schlieren flash photography, acoustic transient measurements with a piezoelectric polyvinylidene-fluoride needle-hydrophone, mass loss measurements, and chemical analyses were employed to study the ablation mechanisms of the free

  19. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  20. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    2008-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  1. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    1999-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  2. Structural, spectroscopic and electrical studies of nanostructured porous ZnO thin films prepared by pulsed laser deposition.

    PubMed

    Vinodkumar, R; Navas, I; Porsezian, K; Ganesan, V; Unnikrishnan, N V; Mahadevan Pillai, V P

    2014-01-24

    ZnO thin films are grown on quartz substrates at various substrate temperatures (ranging from 573 to 973 K) under an oxygen ambience of 0.02 mbar by using pulsed laser ablation. Influence of substrate temperature on the structural, morphological, optical and electrical properties of the ZnO thin films are investigated. The XRD and micro-Raman spectra reveal the presence of hexagonal wurtzite structure of ZnO with preferred orientation (002). The particle size is calculated using Debye-Scherer equation and the average size of the crystallites are found to be in the range 17-29 nm. The AFM study reveals that the surface morphology of the film depends strongly on the substrate temperature. UV-Visible transmittance spectra show highly transparent nature of the films in visible region. The calculated optical band gap energy is found to be decrease with increase in substrate temperatures. The complex dielectric constant, the loss factor and the distribution of the volume and surface energy loss of the ZnO thin films prepared at different substrate temperatures are calculated. All the films are found to be highly porous in nature. The PL spectra show very strong emission in the blue region for all the films. The dc electrical resistivity of the film decreases with increase in substrate temperature. The temperature dependent electrical measurements done on the film prepared at substrate temperature 573 K reveals that the electric conduction is thermally activated and the activation energy is found to be 0.03911 eV which is less than the reported values for ZnO films.

  3. Dual-Laser-Pulse Ignition

    NASA Technical Reports Server (NTRS)

    Trinh, Huu; Early, James W.; Thomas, Matthew E.; Bossard, John A.

    2006-01-01

    A dual-pulse laser (DPL) technique has been demonstrated for generating laser-induced sparks (LIS) to ignite fuels. The technique was originally intended to be applied to the ignition of rocket propellants, but may also be applicable to ignition in terrestrial settings in which electric igniters may not be suitable.

  4. Thickness dependent structural, optical and electrical properties of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} thin films deposited by pulsed laser deposition

    SciTech Connect

    Mishra, Pradeep K.; Prasad, J. N.; Gautam, Yogendra K.; Jain, Ravish K.; Choudhary, A. K.; Chandra, Ramesh; Kumar, Ashwani

    2014-01-28

    CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaks for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ∼10{sup 6} cm{sup −1} absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.

  5. On the Optical Memory of a Thin-Film plnSb-nCdTe Heterojunction Obtained by Laser Pulsed Deposition

    DTIC Science & Technology

    2002-01-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012661 TITLE: On the Optical Memory of a Thin - Film plnSb-nCdTe...Proc. Vol. 692 © 2002 Materials Research Society H9.38 On the Optical Memory of a Thin - Film pInSb-nCdTe Heterojunction Obtained by Laser Pulsed...Armenia; *Yerevan Physics Institute, Yerevan, 375036, Armenia. ABSTRACT Thin film pInSb-nCdTe heterojunctions (HJs) were produced using pulsed laser

  6. High performance FeSe0.5Te0.5 thin films grown at low temperature by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yuan, Pusheng; Xu, Zhongtang; Zhang, Haitao; Wang, Dongliang; Ma, Yanwei; Zhang, Ming; Li, Jianqi

    2015-06-01

    We report on fully epitaxial FeSe0.5Te0.5 (FST) thin films of high quality grown on CaF2 (00l) substrate at a low temperature of 300 °C by pulsed laser deposition. The transport Jc of thin films is up to 1.36 MA cm-2 in self-field and 0.97 MA cm-2 in 9 T at 4.2 K, indicating very weak field dependence. A near isotropy of Jc (γ = JcH//ab/JcH//c) as low as 1.09 at 9 T is achieved in the FST thin films. Moreover, there is no clear amorphous interfacial layer between the film and the substrate, probably due to low temperature and low laser repetition rate, while the thickness of the reaction layer is approximate 5 nm in many other works. The transmission electron microscopy evidence shows that some lattices with lateral size <5 nm × 20 nm seem to be disturbed. These location defects are thought to be responsible for the nearly isotropic behavior of the superconductivity.

  7. Effect of nitrogen surrounding gas and plasma assistance on nitrogen incorporation in a-C:N films by femtosecond pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bourquard, F.; Maddi, C.; Donnet, C.; Loir, A.-S.; Barnier, V.; Wolski, K.; Garrelie, F.

    2016-06-01

    In the context of nitrogen-rich amorphous carbon thin films ultrafast pulsed laser deposition from graphite targets in inert nitrogen or nitrogen plasma ambient, this study assesses the correlation between the ablation plume composition and dynamics and the thin films contents and structures. The use of both optical emission spectroscopy and spectrally resolved 2D imaging, coupled with intensified CCD temporal resolution, allows to precisely follow such species of the plume as CN and C2 molecules, from their apparition to their deposition on the substrate. The results show that carbon-nitrogen bonding arises at the early time of expansion with little changes in quantity thereafter. The key role of the DC-bias is in lowering the molecular weight of the ambient gas, thus easing molecules way toward the target and interfering with the chemical reaction for CN generation. Depending on the ambient pressure, these processes will have drastically different effects on the thin films properties and contents. This work thus explains the origin of high nitrogen contents in a-C:N thin films obtained using DC-bias, and proposes an easy in situ optical observation-based way to predict and look for the best conditions to maximize those contents in future work.

  8. Vertical La0.7Ca0.3MnO3 nanorods tailored by high magnetic field assisted pulsed laser deposition

    PubMed Central

    Zhang, Kejun; Dai, Jianming; Zhu, Xuebin; Zhu, Xiaoguang; Zuo, Xuzhong; Zhang, Peng; Hu, Ling; Lu, Wenjian; Song, Wenhai; Sheng, Zhigao; Wu, Wenbin; Sun, Yuping; Du, Youwei

    2016-01-01

    La0.7Ca0.3MnO3 (LCMO) thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] single crystal substrates have been prepared by high magnetic field assisted pulsed laser deposition (HMF-PLD) developed by ourselves. Uniformly sized and vertically aligned nanorod structures can be obtained under an applied high magnetic field above 5 T, and the dimension size of the nanorods can be manipulated by varying the applied magnetic field. It is found that the magnetic anisotropy is strongly correlated to the dimension size of the nanorods. A significantly enhanced low-field magnetoresistance (LFMR) of −36% under 0.5 T at 100 K can be obtained due to the enhanced carrier scattering at the vertical grain boundaries between the nanorods for the LCMO films. The growth mechanism of the nanorods has been also discussed, which can be attributed to the variation of deposition rate, adatom surface diffusion, and nucleation induced by the application of a high magnetic field in the film processing. The successful achievements of such vertical nanorod structures will provide an instructive route to investigate the physical nature of these nanostructures and achieve nanodevice manipulation. PMID:26778474

  9. Pulsed laser deposition of novel nitride solid solution films Ni xTi 1- xN y on MgO(0 0 1)

    NASA Astrophysics Data System (ADS)

    Sakamoto, Koyo; Inumaru, Kei; Yamanaka, Shoji

    2002-10-01

    A novel nitride solid solution, Ni xTi 1- xN y (0≤ x≤0.31, 0.59≤ y≤1) was grown on MgO(0 0 1) using a pulsed laser deposition (PLD) method combined with RF nitrogen radical irradiation. Compressed disks made of mixtures of titanium hydride and nickel metal were used as the PLD targets. Simple Ti-Ni alloyed targets gave no crystalline nitride. High-resolution X-ray diffraction reciprocal space mapping revealed that the deposited films were epitaxially grown on MgO(0 0 1) and that the lattice of the films shrunk to fit the lattice of MgO(0 0 1) in the plane. The lattice constant perpendicular to the plane decreased linearly as the Ni content increased up to x=0.31, demonstrating the incorporation of Ni atoms into the crystal structure. These thin films were metallic conductors. X-ray photoelectron spectra showed that the substitution of Ti for Ni brought about the formation of large amounts of nitrogen vacancies.

  10. Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

    NASA Astrophysics Data System (ADS)

    Nian, Qiong; Montgomery, Kyle H.; Zhao, Xin; Jackson, Tom; Woodall, Jerry M.; Cheng, Gary J.

    2015-11-01

    Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

  11. Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Jingyun; Cao, Guohua; Zong, Haitao; Kang, Chaoyang; Jia, Erguang; Zhang, Baoqing; Li, Ming

    Novel AZO/Zr50Cu50/AZO tri-layer transparent conductive films with excellent transmittance in both visible and near infrared region were successfully prepared by pulsed laser deposition on glass substrates. The electrical and optical properties were investigated at various Zr50Cu50 thicknesses. As the AZO thickness was fixed at 50 nm and Zr50Cu50 thickness was varied between 1 and 18 nm, it was found that AZO (50 nm)/Zr50Cu50/AZO (50 nm) tri-layer films exhibited good conductivity and high transmittance in both visible and near infrared wavelength. Additionally, both the electrical and optical properties of AZO (50 nm)/Zr50Cu50 (2 nm)/AZO (50 nm) tri-layer films were found to be sensitive to the growth temperature. In this work, the lowest sheet resistance (43 Ω/□) and relatively high transmittance (∼80%) in the range of 400-2000 nm were achieved while the growth temperature was 350 °C. Furthermore, the AZO (50 nm)/Zr50Cu50 (2 nm)/AZO (50 nm) thin film deposited at 350 °C exhibits the highest figure of merit of 1.42 × 10-3 Ω-1, indicating that the multilayer is promising for coated glasses and thin film solar cells.

  12. Structural optical and electronic properties of Fe and Ga doped ZnO thin films grown using pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Singh, Karmvir; Shukla, D. K.; Majid, S.; Dhar, R.; Choudhary, R. J.; Phase, D. M.

    2016-10-01

    Band gap engineering in ZnO thin films have been subject of intensive studies. The thin films of 2 wt % Fe and 2 wt % Ga doped ZnO and undoped ZnO were deposited on glass substrate by pulse laser deposition technique. Structural, optical and electronic structure properties of these thin films were investigated by X- Ray diffraction (XRD), UV-Vis spectroscopy and X-ray absorption spectroscopy (XAS), respectively. XRD studies show that all the thin films are highly oriented along the c-axis and maintain the wurtzite structure. Out of plane lattice parameter in Ga doped is smaller while in Fe doped is larger, compared to undoped ZnO. The band gaps of doped films have been found to increase due to doping of the Ga and Fe ions. XAS studies across O K edges of doped thin films show that the conduction band edge structure probed via oxygen 1s to 2p transitions have modified significantly in Ga doped sample.

  13. Antifungal activity of Ag:hydroxyapatite thin films synthesized by pulsed laser deposition on Ti and Ti modified by TiO2 nanotubes substrates

    NASA Astrophysics Data System (ADS)

    Eraković, S.; Janković, A.; Ristoscu, C.; Duta, L.; Serban, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Socol, M.; Iordache, O.; Dumitrescu, I.; Luculescu, C. R.; Janaćković, Dj.; Miškovic-Stanković, V.

    2014-02-01

    Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FTIR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity.

  14. Optimisation of anatase TiO2 thin film growth on LaAlO3(0 0 1) using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Krupski, K.; Sanchez, A. M.; Krupski, A.; McConville, C. F.

    2016-12-01

    Optimisation of epitaxial anatase TiO2 thin films grown on LaAlO3(0 0 1) substrates was performed using ultra-high vacuum based pulsed laser deposition (PLD) and studied by in-situ reflection high-energy electron diffraction (RHEED). In addition, ex-situ X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were performed to characterise the bulk properties of these thin films. The deposited TiO2 thin film is demonstrated to have anatase phase and bonded directly to the LaAlO3(0 0 1) substrate. In a separate ultra-high vacuum system low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) measurements were performed and a well-ordered two-domain (1 × 4) and (4 × 1) reconstruction of anatase surface was observed. Analysis of the STM measurements indicates the coexistence of atomic steps of both 2.5 Å and 5.0 Å, confirming the existence of two TiO2 domains. The atomic resolution STEM images reveal that the TiO2/LaAlO3 interface to be terminated with LaO layer and that the anatase-TiO2 reconstruction was found to be stable during the film growth.

  15. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    PubMed

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt.

  16. Ultrashort laser pulse beam shaping.

    PubMed

    Zhang, Shuyan; Ren, Yuhang; Lüpke, Gunter

    2003-02-01

    We calculated the temporal and spatial characteristics of an ultrashort laser pulse propagating through a diffractive beam-shaping system that converts a Gaussian beam into a beam with a uniform irradiance profile that was originally designed for continuous waves [Proc. SPIE 2863, 237(1996)]. The pulse front is found to be considerably curved for a 10-fs pulse, resulting in a temporal broadening of the pulse that increases with increasing radius. The spatial intensity distribution deviates significantly from a top-hat profile, whereas the fluence shows a homogeneous radial distribution.

  17. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  18. Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

    NASA Astrophysics Data System (ADS)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2015-09-01

    Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition at room temperature in oxygen ambient pressures of 75, 150 and 300 mTorr. The growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of as-grown films with thicknesses ˜65-420 nm were recorded for the three oxygen pressures. The growth rates were found to be highly linear both as a function of film thickness and oxygen pressure, indicating high reproducibility. All the films were optically smooth, hydrophobic and nanostructured with lateral grain shapes of ˜150 nm wide. This was found compatible with the deposition of condensed nanoclusters, formed in the ablation plume, on a cold and amorphous substrate. Films were nanocrystalline (wurtzite structure), c-axis oriented, with average crystallite size ˜22 nm for ZnO and ˜16 nm for AZO. In-plane compressive stress values of 2-3 GPa for ZnO films and 0.5 GPa for AZO films were found. Films also displayed high transmission greater than 95% in some cases, in the 400-800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to n-type conductive was observed for the films, with resistivity ˜103 Ω cm and Hall mobility in 4-14 cm2 V-1 s-1 range, showing marked dependences on film thickness and oxygen pressure. Applications in the fields of microfluidic devices and flexible electronics for these ZnO and AZO films are suggested.

  19. Cation non-stoichiometry in pulsed laser deposited Sr{sub 2+y}Fe{sub 1+x}Mo{sub 1-x}O₆ epitaxial films

    SciTech Connect

    Meyer, T. L.; Woodward, P. M.; Dixit, M.; Williams, R. E. A.; Susner, M. A.; Fraser, H. L.; McComb, D. W.; Sumption, M. D.; Lemberger, T. R.

    2014-07-07

    Sr₂FeMoO₆ (SFMO) films were grown on SrTiO₃ (100)- and (111)-oriented substrates via pulsed laser deposition (PLD). In order to study the fundamental characteristics of deposition, films were grown in two different PLD chambers. In chamber I, the best films were grown with a relatively long substrate-to-target distance (89 mm), high substrate temperature (850 °C), and low pressure (50 mTorr) in a 95% Ar/5% H₂ atmosphere. Although X-ray diffraction (XRD) measurements indicate these films are single phase, Rutherford Backscattering (RBS) measurements reveal considerable non-stoichiometry, corresponding to a Sr₂Fe{sub 1–x}Mo{sub 1+x}O₆ composition with x≅0.2–0.3. This level of non-stoichiometry results in inferior magnetic properties. In chamber II, the best films were grown with a much shorter substrate-to-target distance (38 mm), lower temperature (680 °C), and higher pressure (225 mTorr). XRD measurements show that the films are single phase, and RBS measurements indicate that they are nearly stoichiometric. The degree of ordering between Fe and Mo was dependent on both the temperature and pressure used during deposition, reaching a maximum order parameter of 85%. The saturation magnetization increases as the Fe/Mo ordering increases, reaching a maximum of 2.4 μB/f.u. Based on prior studies of bulk samples, one would expect a higher saturation magnetization for this degree of Fe/Mo order. The presence of extra strontium oxide layers in the form of Ruddlesden-Popper intergrowths appears to be responsible for the lower than expected saturation magnetization of these films.

  20. Dark pulse generation in fiber lasers incorporating carbon nanotubes.

    PubMed

    Liu, H H; Chow, K K

    2014-12-01

    We demonstrate the generation of dark pulses from carbon nanotube (CNT) incorporated erbium-doped fiber ring lasers with net anomalous dispersion. A side-polished fiber coated with CNT layer by optically-driven deposition method is embedded into the laser in order to enhance the birefringence and nonlinearity of the laser cavity. The dual-wavelength domain-wall dark pulses are obtained from the developed CNT-incorporated fiber laser at a relatively low pump threshold of 50.6 mW. Dark pulses repeated at the fifth-order harmonic of the fundamental cavity frequency are observed by adjusting the intra-cavity polarization state.

  1. Coaxial short pulsed laser

    DOEpatents

    Nelson, M.A.; Davies, T.J.

    1975-08-01

    This invention relates to a laser system of rugged design suitable for use in a field environment. The laser itself is of coaxial design with a solid potting material filling the space between components. A reservoir is employed to provide a gas lasing medium between an electrode pair, each of which is connected to one of the coaxial conductors. (auth)

  2. Short pulse free electron laser amplifier

    DOEpatents

    Schlitt, Leland G.; Szoke, Abraham

    1985-01-01

    Method and apparatus for amplification of a laser pulse in a free electron laser amplifier where the laser pulse duration may be a small fraction of the electron beam pulse duration used for amplification. An electron beam pulse is passed through a first wiggler magnet and a short laser pulse to be amplified is passed through the same wiggler so that only the energy of the last fraction, f, (f<1) of the electron beam pulse is consumed in amplifying the laser pulse. After suitable delay of the electron beam, the process is repeated in a second wiggler magnet, a third, . . . , where substantially the same fraction f of the remainder of the electron beam pulse is consumed in amplification of the given short laser pulse in each wiggler magnet region until the useful electron beam energy is substantially completely consumed by amplification of the laser pulse.

  3. Investigation of Intermixing/Implantation in Pulsed Laser Deposited Metallic Cr/Ni80Fe20 and Ni80Fe20/Polypyrrole Multilayer Thin Films

    NASA Astrophysics Data System (ADS)

    Akpan, Usenobong Benjamin; George, Nyakno Jimmy; Ekanem, Aniekan Martin; Emah, Joseph Bassey

    2016-12-01

    Cr/Ni80Fe20 and Ni80Fe20/Polypyrrole multilayer thin films were prepared by pulsed laser deposition in vacuum and in Argon background gas at different pressures. Intermixing/implantation at their interfaces were investigated by scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) analysis. Surface morphology (step height and roughness) of these samples were carried out by atomic force microscopy (AFM) and magnetic property (saturation magnetic flux) measurement by hysteresis loop tracer. The magnetic and surface morphology characterisations were used to calculate the interfacial mixing and/or implantation depth which have been found to agree with direct measured values. A correlation of these intermixing depths with Monte Carlo simulations of ion bombardment in the deposition process, using Stopping range of ion in matter (SRIM) incorporated with Transport of ion in matter (TRIM) gave the energy of the most implanted ionic species in a very simple way. Under high vacuum pressure, intermixing/implantation depth at the interfaces was high and occurs due to the presence of energetic species in the ablated plasma plume. With Argon gas background of increasing pressure, a reduction in energetic species energy is followed with a decrease in intermixing/implantation depth and the scattering of the ablated species leads to a decrease in the growth rate of Cr. An Argon background gas pressure of 20 mTorr gave the kinetic energy of the most energetic Cr species as 150 eV (from simulation) with 0.61 nm intermixing/implantation depth, while the vacuum pressure of 1.3 × 10- 7 Torr gave the most energetic Cr energy as 3.2 keV with 2.38 nm depth of intermixing. Vacuum pressure 5 × 10- 7 Torr with deposition of Permalloy (Py) Ni80Fe20 into polypyrrole gave measured intermixing/implantation depths of 6.81 nm with Ni80Fe20 energy of about 800 eV. The surface of the Py/polypyrrole (Ppy) was very rough at vacuum pressure 5 × 10- 3 Torr

  4. Giant dielectric constant in TiO{sub 2}/Al{sub 2}O{sub 3} nanolaminates grown on doped silicon substrate by pulsed laser deposition

    SciTech Connect

    Walke, P.; Bouregba, R.; Mercey, B.; Lüders, U.; Lefevre, A.; Parat, G.; Lallemand, F.; Voiron, F.

    2014-03-07

    High quality amorphous nanolaminates by means of alternate Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were grown with atomic scale thickness control by pulsed laser deposition. A giant dielectric constant (>10 000), strongly enhanced compared to the value of either Al{sub 2}O{sub 3} or TiO{sub 2} or their solid solution, was observed. The dependence of the dielectric constant and the dielectric loss on the individual layer thickness of each of the constituting materials was investigated between 0.3 nm and 1 nm, in order to understand the prevailing mechanisms and allow for an optimization of the performances. An impedance study confirmed as the key source of the giant dielectric constant a Maxwell–Wagner type dielectric relaxation, caused by space charge polarization in the nanolaminate structure. The current work provides better insight of nanolaminates and their sublayer thickness engineering for potential applications.

  5. Microstructural characterization of GdBa 2Cu 3O y superconductive layer fabricated by in-plume pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kato, T.; Yoshida, R.; Chikumoto, N.; Lee, S.; Tanabe, K.; Izumi, T.; Hirayama, T.; Shiohara, Y.

    2011-11-01

    A GdBa2Cu3Oy (GdBCO) layer was fabricated on Hastelloy with a textured CeO2/LaMnO3/MgO/Gd-Zr-O buffer layer by in-plume pulsed laser deposition using a reel-to-reel tape transfer system. The microstructures of the coated conductor were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a focused ion beam (FIB)-SEM dual beam system. Numerous outer-growth grains form on the GdBCO surface. Their shapes of these grains can be broadly categorized into three types: rectangular, pyramidal and circular. Cross-sectional TEM images of the GdBCO layer indicate that it is predominantly composed of grains with their c-axis aligned normal to the substrate. The circular grains were identified as being oriented along the c-axis, but rotated 45° in-plane relative to the matrix grains, while the rectangular grains were identified as those with their a-axis parallel to the substrate normal, and the pyramidal grains with their c-axis tilted away from the substrate normal. In addition, TEM revealed that CuO grains formed under the tilted grains and the rotated grains. A 3D reconstructed image of the GdBCO layer using an FIB-SEM dual-beam system clearly shows the distribution of those outer-growth grains and the CuO.

  6. IR emission and electrical conductivity of Nd/Nb-codoped TiOx (1.5 < x < 2) thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Tchiffo-Tameko, C.; Cachoncinlle, C.; Perriere, J.; Nistor, M.; Petit, A.; Aubry, O.; Pérez Casero, R.; Millon, E.

    2016-12-01

    The effect of the co-doping with Nd and Nb on electrical and optical properties of TiOx films is reported. The role of oxygen vacancies on the physical properties is also evidenced. The films are grown by pulsed-laser deposition onto (001) sapphire and (100) silicon substrates. The substrate temperature was fixed at 700 °C. To obtain either stoichiometric (TiO2) or highly oxygen deficient (TiOx with x < 1.6) thin films, the oxygen partial pressure was adjusted at 10-1 and 10-6 mbar, respectively. 1%Nd-1%Nb, 1%Nd-5%Nb and 5%Nd-1%Nb co-doped TiO2 were used as bulk ceramic target. Composition, structural and morphological properties of films determined by Rutherford backscattering spectroscopy, X-ray diffraction and scanning electron microscopy, are correlated to their optical (UV-vis transmission and photoluminescence) and electrical properties (resistivity at room temperature). The most intense Nd3+ emission in the IR domain is obtained for stoichiometric films. Codoping Nd-TiOx films by Nb5+ ions is found to decrease the photoluminescence efficiency. The oxygen pressure during the growth allows to tune the optical and electrical properties: insulating and highly transparent (80% in the visible range) Nd/Nb codoped TiO2 films are obtained at high oxygen pressure, while conductive and absorbent films are grown under low oxygen pressure (10-6 mbar).

  7. Low temperature synthesis of hierarchical TiO2 nanostructures for high performance perovskite solar cells by pulsed laser deposition

    SciTech Connect

    Yang, Bin; Mahjouri-Samani, Masoud; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-06-10

    A promising way to advance perovskite solar cells is to improve the quality of the electron transport material e.g., titanium dioxide (TiO2) in a direction that increases electron transport and extraction. Although dense TiO2 films are easily grown in solution, efficient electron extraction suffers due to a lack of interfacial contact area with the perovskite. Conversely, mesoporous films do offer high surface-area-to-volume ratios, thereby promoting efficient electron extraction, but their morphology is relatively difficult to control via conventional solution synthesis methods. Here, a pulsed laser deposition method was used to assemble TiO2 nanoparticles into TiO2 hierarchical nanoarchitectures having the anatase crystal structure, and prototype solar cells employing these structures yielded power conversion efficiencies of ~ 14%. Our approach demonstrates a way to grow high aspect-ratio TiO2 nanostructures for improved interfacial contact between TiO2 and perovskite materials, leading to high electron-hole pair separation and electron extraction efficiencies for superior photovoltaic performance. In addition, compared to conventional solution-processed TiO2 films that require 500 °C to obtain a good crystallinity, our relatively low temperature (300 °C) TiO2 processing method may promote reduced energy-consumption during device fabrication as well as enable compatibility with various flexible polymer substrates.

  8. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoo, Jinyeop; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi

    2016-05-01

    We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. We hypothetically ascribe the Ga-polarity selection of GaN on the LT-GaN buffer layer to the mixed polarity of LT-GaN grains and higher growth rate of the Ga-polar grain, which covers up the N-polar grain during the initial stage of the high-temperature growth. The X-ray rocking curve analysis revealed that the edge-dislocation density in the N-polar regrown GaN is 5 to 8 times smaller than that in the Ga-polar regrown GaN. N-polar GaN grows directly on N-polar AlN at higher temperatures. Therefore, nucleus islands grow larger than those of LT-GaN and the area fraction of coalescence boundaries between islands, where edge dislocations emerge, becomes smaller.

  9. Epitaxial Fe{sub 3-x}Ti{sub x}O{sub 4} films from magnetite to ulvöspinel by pulsed laser deposition

    SciTech Connect

    Droubay, T.C.; Pearce, C.I.; Ilton, E.S.; Engelhard, M.H.; Engelhard, M.H.; Heald, S.M.; Arenholz, E.; Rosso, K.M.

    2011-07-21

    Epitaxial films along the Fe{sub 3-x}Ti{sub x}O{sub 4} (titanomagnetite) compositional series from pure end-members magnetite (Fe{sub 3}O{sub 4}) to ulvöspinel (Fe{sub 2}TiO{sub 4}) were successfully grown by pulsed laser deposition on MgO(100) substrates. Spectroscopic characterization including high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and synchrotron-based x-ray absorption and magnetic circular dichroism consistently shows that Ti(IV) substitutes for Fe(III) in the inverse spinel lattice with a proportional increase in lattice Fe(II) concentration. No evidence of Ti interstitials, spinodal decomposition, or secondary phases was found in the bulk of the grown films. At the uppermost few nanometers of the Ti-bearing film surfaces, evidence suggests that Fe(II) is susceptible to facile oxidation, and that an associated lower Fe/Ti ratio in this region is consistent with surface compositional incompleteness or alteration to a titanomaghemite-like composition and structure. The surface of these films nonetheless appear to remain highly ordered and commensurate with the underlying structure despite facile oxidation, a surface condition that is found to be reversible to some extent by heating in low oxygen environments.

  10. Photovoltaic properties of Aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} thin films grown by pulsed laser deposition

    SciTech Connect

    Kooriyattil, Sudheendran; Katiyar, Rajesh K.; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Morell, Gerardo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-08-18

    We report a remarkable photovoltaic effect in pulsed laser deposited multiferroic aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} (BFTO) thin films sandwiched between ZnO:Al transparent conductive oxide top electrode and SrRuO{sub 3} bottom electrode fabricated on amorphous fused silica substrates. The structural and micro structural properties of these films were analysed by X-ray diffraction and atomic force microscopy techniques. The films were showing a photo sensitive ferroelectric behaviour with a notable apparent polarization in the range of 10–15 μC/cm{sup 2}. These films also exhibited a switchable photo-response and this parameter was observed to be sensitive to polarisation field and the polarization direction. The device shows a large ON/OFF photo current ratio with an open circuit voltage of 0.14 V. The photo response at zero bias of this BFTO based heterostructures showed rapid increase to a saturation value of 6 μA at zero bias.

  11. Enhancement of the luminescent characteristics of Li-doped CaTiO3 : Pr3+ thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Hyun Kyoung; Chung, Jong Won; Moon, Byung Kee; Choi, Byung Chun; Jeong, Jung Hyun; Kim, Kwang Ho

    2009-04-01

    The influence of Li doping on the crystallization, surface morphology and luminescent properties of CaTiO3 : Pr3+ films has been investigated. The films were grown on Al2O3 (0 0 0 1) substrates using the pulsed laser deposition method under different oxygen pressures. The substrate temperature was fixed at 700 °C and the range of oxygen pressure was 100-400 mTorr. The crystallinity and surface morphology of the films were investigated using x-ray diffraction and atomic force microscopy, respectively. The emitted radiation at 322 nm excitation was dominated by a red emission peak at 613 nm radiated from the transition of 1D2 → 3H4 of Pr3+ ions. In particular, the incorporation of Li+ ions into the CaTiO3 lattice could induce the increase in the intensity of the photoluminescence. The enhanced luminescence may result not only from the improved crystallinity but also from the reduced internal reflections caused by rougher surfaces. The luminescent intensity and surface roughness exhibited similar behaviour as a function of the oxygen pressure.

  12. Competition between (001) and (111) MgO thin film growth on Al-doped ZnO by oxygen plasma assisted pulsed laser deposition

    SciTech Connect

    Xiao, Bo; Yang, Qiguang; Walker, Brandon; Gonder, Casey A.; Romain, Gari C.; Mundle, Rajeh; Bahoura, Messaoud; Pradhan, A. K.

    2013-06-07

    We report on the study of epitaxial MgO thin films on (0001) Al-doped ZnO (Al: ZnO) underlayers, grown by oxygen plasma assisted pulsed laser deposition technique. A systematic investigation of the MgO thin films was performed by X-ray diffraction and atomic force microscopy, along with the current-voltage characteristics. A distinguished behavior was observed that the preferred MgO orientation changes from (111) to (001) in the films as the growth temperature increases. Two completely different in-plane epitaxial relationships were also determined from X-ray diffraction as: [110]MgO//[1120]Al: ZnO and [110]MgO//[1100]Al: ZnO for (001) MgO with 60 Degree-Sign rotated triplet domains, and [110]MgO//[1120]Al: ZnO for (111) MgO with 180 Degree-Sign rotated twin. The pronounced temperature dependence indicates a reconciliation of the nucleation driving forces among surface, interfacial, and strain energy for heteroepitaxy of cubic MgO on hexagonal Al: ZnO. The related interfacial atomic registry is considered to be important to the formation of unusual (001) MgO on hexagonal crystals. In addition, the electrical characterization revealed a dramatic reduction of the leakage current in (001) MgO thin films, whereas the small grain size of (111) MgO is identified by atomic force microscopy as a main cause of large leakage current.

  13. Combinatorial pulsed laser deposition of magnetic and magneto-optical Sr(GaxTiyFe0.34-0.40)O3-δ perovskite films.

    PubMed

    Sun, Xue Yin; Zhang, Chen; Aimon, Nicolas M; Goto, Taichi; Onbasli, Mehmet; Kim, Dong Hun; Choi, Hong Kyoon; Ross, C A

    2014-11-10

    Ferromagnetic Sr(GaxTiyFe0.34-0.40)O3-δ (0.1 ≤ x, y ≤ 0.5) films with single-crystal perovskite structure were epitaxially grown on (001) (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by combinatorial pulsed laser deposition (CPLD) and compared with previous results from films grown from single targets. In CPLD films the Fe was present as both Fe(2+) and Fe(3+). The distribution of Sr, Ga, Ti, and O was homogeneous, but Fe-rich nanowires with diameter of 3 nm were present perpendicular to the film plane. The unit cell was tetragonally distorted with the ratio of out-of-plane to in-plane lattice parameter decreasing from 1.06 to 1.02 as the Ga content increased. The magnetic easy axis of the films changed from out-of-plane when Ti content y > 0.3 to isotropic as the Ga content increased, consistent with a reduction in magnetoelastic anisotropy. The Ga lowered the Faraday rotation and the magnetization but increased the optical transmittance.

  14. Crack Propagation Resistance of α-Al2O3 Reinforced Pulsed Laser-Deposited Hydroxyapatite Coating on 316 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Bajpai, Shubhra; Gupta, Ankur; Pradhan, Siddhartha Kumar; Mandal, Tapendu; Balani, Kantesh

    2014-09-01

    Hydroxyapatite (HA) is a widely used bioceramic known for its chemical similarity with that of bone and teeth (Ca/P ratio of 1.67). But, owing to its extreme brittleness, α-Al2O3 is reinforced with HA and processed as a coating via pulsed laser deposition (PLD). Reinforcement of α-Al2O3 (50 wt.%) in HA via PLD on 316L steel substrate has shown modulus increase by 4% and hardness increase by 78%, and an improved adhesion strength of 14.2 N (improvement by 118%). Micro-scratching has shown an increase in the coefficient-of-friction from 0.05 (pure HA) to 0.17 (with 50 wt.% Al2O3) with enhancement in the crack propagation resistance (CPR) up to 4.5 times. Strong adherence of PLD HA-Al2O3 coatings (~4.5 times than that of HA coating) is attributed to efficient release of stored tensile strain energy (~17 × 10-3 J/m2) in HA-Al2O3 composites, making it a potential damage-tolerant bone-replacement surface coating.

  15. Growth mode, magnetic and magneto-optical properties of pulsed-laser-deposited Au/Co/Au(1 1 1) trilayers

    NASA Astrophysics Data System (ADS)

    Clavero, C.; Cebollada, A.; Armelles, G.; Fruchart, O.

    2010-03-01

    The growth mode, magnetic and magneto-optical properties of epitaxial Au/Co/Au(1 1 1) ultrathin trilayers grown by pulsed-laser deposition (PLD) under ultra-high vacuum are presented. Sapphire wafers buffered with a single-crystalline Mo(1 1 0) buffer layer were used as substrates. Owing to PLD-induced interfacial intermixing at the lower Co/Au(1 1 1) interface, a close-to layer-by-layer growth mode is promoted. Surprisingly, despite this intermixing, ferromagnetic behavior is found at room temperature for coverings starting at 1 atomic layer (AL). The films display perpendicular magnetization with anisotropy constants reduced by 50% compared to TD-grown or electrodeposited films, and with a coercivity more than one order of magnitude lower (≲5 mT). The magneto-optical (MO) response in the low Co thickness range is dominated by Au/Co interface contributions. For thicknesses starting at 3 AL Co, the MO response has a linear dependence with the Co thickness, indicative of a continuous-film-like MO behavior.

  16. Relation between crystallinity and chemical nature of surface on wettability: A study on pulsed laser deposited TiO{sub 2} thin films

    SciTech Connect

    Shirolkar, Mandar M.; Phase, Deodatta; Sathe, Vasant; Choudhary, Ram Janay; Rodriguez-Carvajal, J.

    2011-06-15

    Pure titania (TiO{sub 2}) polycrystalline thin films in rutile, anatase and mixed phase have been grown on amorphous glass substrates by pulsed laser deposition method at various oxygen gas pressure. Wettability investigations have been carried out on these films. Consistent with our previous report [J. Phys. D: Appl. Phys. 41, 155308 (2008)] it has been observed that for nearly same surface roughness large contact angle or superhydrophobicity is present when sample has a pure single phase and lower contact angle or hydrophobicity when mixed phases were present. Structural characterizations suggest that in addition to roughness, pure phase film surface associated with hydrophobic sites and mixed phase film surface show association of both hydrophobic and hydrophilic sites, which might be inducing specific wetting character. UV treatment induces superhydrophilicity in the films. It was observed that UV irradiation causes nonequilibrium state on the TiO{sub 2} surface, leading to changes in the electron density, which in turn produces decrement in the crystallinity and lattice expansion. Reversible changes in the wetting state on the pure phase surfaces were observed to be faster than those on the mixed phase surfaces. We tried to establish the possible relation between crystalline phases, chemical nature of surface on reversible wettability besides the main governing parameter viz. surface roughness.

  17. High quality interconnected core/shell ZnO nanorod architectures grown by pulsed laser deposition on ZnO-seeded Si substrates

    NASA Astrophysics Data System (ADS)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2017-01-01

    We report the production of vertically aligned and interconnected ZnO core/shell nanorods using pulsed laser deposition (PLD) in a continuous two-step growth process. X-ray diffraction studies showed wurtzite structure and c-axis orientation with a high degree of verticality. Scanning electron microscopy showed a characteristic interconnection morphology between the nanorod tips uniformly present over the entire sample surface area, while transmission electron microscopy revealed crystalline core/amorphous shell architecture. Strong bands at 98.7 cm-1 and 437.2 cm-1 (wurtzite ZnO low and high non-polar E2 modes) were the main features of the nanorod Raman spectra, again showing the high sample quality. Low-temperature PL data exhibited strong I6 emission and structured green band showing high optical quality. Electrical studies indicated n-type material with ohmic behaviour. The results are discussed in the context of the advantages offered by interconnected architectures of core/shell ZnO nanostructures for various applications.

  18. A new method to preserve the c-axis growth of thick YBa 2Cu 3O 7-δ films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhu, Dongliang; Huang, Jie; Li, Hui; Shen, Mingrong; Su, Xiaodong

    2009-11-01

    YBa2Cu3O7-δ (YBCO) films were prepared on (1 0 0) MgO substrates by pulsed laser deposition (PLD) method. In order to eliminate the a-axis growth, which is commonly observed in the YBCO film thicker than a critical value, we developed a new PLD target that was sintered at a temperature far below YBCO 123 phase formation. The surface analysis made by AFM technique confirmed that very fine particles of around 20 nm size could be ejected from the new target to the substrate. The fine oxide clusters could be easily moved and incorporated into the YBCO phase thus benefited the c-axis growth even in the thick films. For instance, only the c-axis growth in the new film with a thickness of about 650 nm was larger than a critical thickness of the a-axis growth. However, in the standard film of the same thickness, there is ∼24.5% of the a-axis growth accompanying the main c-axis growth. Therefore, the c-axis growth could be preserved in the very thick YBCO film by a non-superconducting target.

  19. Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO3(001)

    NASA Astrophysics Data System (ADS)

    Velázquez, Daniel; Seibert, Rachel; Man, Hamdi; Spentzouris, Linda; Terry, Jeff

    2016-03-01

    We report on the growth of 1-10 ML films of hexagonal boron nitride (h-BN), also known as white graphene, on fiber-oriented Ag buffer films on SrTiO3(001) by pulsed laser deposition. The Ag buffer films of 40 nm thickness were used as substitutes for expensive single crystal metallic substrates. In-situ, reflection high-energy electron diffraction was used to monitor the surface structure of the Ag films and to observe the formation of the characteristic h-BN diffraction pattern. Further evidence of the growth of h-BN was provided by attenuated total reflectance spectroscopy, which showed the characteristic h-BN peaks at ˜780 cm-1 and 1367.4 cm-1. Ex-situ photoelectron spectroscopy showed that the surface of the h-BN films is stoichiometric. The physical structure of the films was confirmed by scanning electron microscopy. The h-BN films grew as large, sub-millimeter sheets with nano- and micro-sheets scattered on the surface. The h-BN sheets can be exfoliated by the micromechanical adhesive tape method. Spectral analysis was performed by energy dispersive spectroscopy in order to identify the h-BN sheets after exfoliation. The use of thin film Ag allows for reduced use of Ag and makes it possible to adjust the surface morphology of the thin film prior to h-BN growth.

  20. Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Yao, J. D.; Zheng, Z. Q.; Shao, J. M.; Yang, G. W.

    2015-09-01

    The progress in the field of graphene has aroused a renaissance of keen research interest in layered transition metal dichalcogenides (TMDs). Tungsten disulfide (WS2), a typical TMD with favorable semiconducting band gap and strong light-matter interaction, exhibits great potential for highly-responsive photodetection. However, WS2-based photodetection is currently unsatisfactory due to the low optical absorption (2%-10%) and poor carrier mobility (0.01-0.91 cm2 V-1 s-1) of the thin WS2 layers grown by chemical vapor deposition (CVD). Here, we introduce pulsed-laser deposition (PLD) to prepare multilayered WS2 films. Large-area WS2 films of the magnitude of cm2 are achieved. Comparative measurements of a WS2-based photoresistor demonstrate its stable broadband photoresponse from 370 to 1064 nm, the broadest range demonstrated in WS2 photodetectors. Benefiting from the large optical absorbance (40%-85%) and high carrier mobility (31 cm2 V-1 s-1), the responsivity of the device approaches a high value of 0.51 A W-1 in an ambient environment. Such a performance far surpasses the CVD-grown WS2-based photodetectors (μA W-1). In a vacuum environment, the responsivity is further enhanced to 0.70 A W-1 along with an external quantum efficiency of 137% and a photodetectivity of 2.7 × 109 cm Hz1/2 W-1. These findings stress that the PLD-grown WS2 film may constitute a new paradigm for the next-generation stable, broadband and highly-responsive photodetectors.The progress in the field of graphene has aroused a renaissance of keen research interest in layered transition metal dichalcogenides (TMDs). Tungsten disulfide (WS2), a typical TMD with favorable semiconducting band gap and strong light-matter interaction, exhibits great potential for highly-responsive photodetection. However, WS2-based photodetection is currently unsatisfactory due to the low optical absorption (2%-10%) and poor carrier mobility (0.01-0.91 cm2 V-1 s-1) of the thin WS2 layers grown by chemical vapor