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Sample records for pulsed laser deposited

  1. Pulsed laser deposition: Prospects for commercial deposition of epitaxial films

    SciTech Connect

    Muenchausen, R.E.

    1999-03-01

    Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique for the deposition of thin films. The vapor source is induced by the flash evaporation that occurs when a laser pulse of sufficient intensity (about 100 MW/cm{sup 2}) is absorbed by a target. In this paper the author briefly defines pulsed laser deposition, current applications, research directed at gaining a better understanding of the pulsed laser deposition process, and suggests some future directions to enable commercial applications.

  2. Nonequilibrium Interlayer Transport in Pulsed Laser Deposition

    SciTech Connect

    Tischler, Jonathan Zachary; Eres, Gyula; Larson, Ben C; Rouleau, Christopher M; Zschack, P.; Lowndes, Douglas H

    2006-01-01

    We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited SrTiO3. Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.

  3. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  4. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  5. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  6. 25 years of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; Ramachandra Rao, M. S.

    2014-01-01

    It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

  7. Nanosecond laser ablation for pulsed laser deposition of yttria

    NASA Astrophysics Data System (ADS)

    Sinha, Sucharita

    2013-09-01

    A thermal model to describe high-power nanosecond pulsed laser ablation of yttria (Y2O3) has been developed. This model simulates ablation of material occurring primarily through vaporization and also accounts for attenuation of the incident laser beam in the evolving vapor plume. Theoretical estimates of process features such as time evolution of target temperature distribution, melt depth and ablation rate and their dependence on laser parameters particularly for laser fluences in the range of 6 to 30 J/cm2 are investigated. Calculated maximum surface temperatures when compared with the estimated critical temperature for yttria indicate absence of explosive boiling at typical laser fluxes of 10 to 30 J/cm2. Material ejection in large fragments associated with explosive boiling of the target needs to be avoided when depositing thin films via the pulsed laser deposition (PLD) technique as it leads to coatings with high residual porosity and poor compaction restricting the protective quality of such corrosion-resistant yttria coatings. Our model calculations facilitate proper selection of laser parameters to be employed for deposition of PLD yttria corrosion-resistive coatings. Such coatings have been found to be highly effective in handling and containment of liquid uranium.

  8. 25 years of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; Ramachandra Rao, M. S.

    2014-01-01

    It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

  9. Pulsed laser ablation and deposition of niobium carbide

    NASA Astrophysics Data System (ADS)

    Sansone, M.; De Bonis, A.; Santagata, A.; Rau, J. V.; Galasso, A.; Teghil, R.

    2016-06-01

    NbC crystalline films have been deposited in vacuum by ultra-short pulsed laser deposition technique. The films have been characterized by transmission and scanning electron microscopies and by X-ray diffraction. To clarify the ablation-deposition mechanism, the plasma produced by the ablation process has been characterized by optical emission spectroscopy and fast imaging. A comparison of the results with those obtained by ns pulsed deposition of the same target has been carried out.

  10. Pulsed laser deposition: the road to hybrid nanocomposites coatings and novel pulsed laser adaptive technique.

    PubMed

    Serbezov, Valery

    2013-01-01

    The applications of Pulsed Laser Deposition (PLD) for producing nanoparticles, nanostructures and nanocomposites coatings based on recently developed laser ablating techniques and their convergence are being reviewed. The problems of in situ synthesis of hybrid inorganic-organic nanocomposites coatings by these techniques are being discussed. The novel modification of PLD called Pulsed Laser Adaptive Deposition (PLAD) technique is presented. The in situ synthesized inorganic/organic nanocomposites coatings from Magnesium (Mg) alloy/Rhodamine B and Mg alloy/ Desoximetasone by PLAD are described. The trends, applications and future development of discussed patented methods based on the laser ablating technologies for producing hybrid nanocomposite coatings have also been discussed in this review.

  11. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  12. Pulsed laser deposition of anatase thin films on textile substrates

    NASA Astrophysics Data System (ADS)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-01

    Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  13. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    DOEpatents

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  14. Fabrication of alkali halide UV photocathodes by pulsed laser deposition

    SciTech Connect

    Brendel', V M; Bukin, V V; Garnov, Sergei V; Bagdasarov, V Kh; Denisov, N N; Garanin, Sergey G; Terekhin, V A; Trutnev, Yurii A

    2012-12-31

    A technique has been proposed for the fabrication of atmospheric corrosion resistant alkali halide UV photocathodes by pulsed laser deposition. We produced photocathodes with a highly homogeneous photoemissive layer well-adherent to the substrate. The photocathodes were mounted in a vacuum photodiode, and a tungsten grid was used as an anode. Using pulsed UV lasers, we carried out experiments aimed at evaluating the quantum efficiency of the photocathodes. With a dc voltage applied between the photocathode and anode grid, we measured a shunt signal proportional to the total charge emitted by the cathode exposed to UV laser light. The proposed deposition technique enables one to produce photocathodes with photoemissive layers highly uniform in quantum efficiency, which is its main advantage over thin film growth by resistive evaporation. (laser technologies)

  15. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  16. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    SciTech Connect

    Singaravelu, Senthil R.; Klopf, John M.; Schriver, Kenneth E.; Park, HyeKyoung; Kelley, Michael J.; Haglund, Jr., Richard F.

    2013-08-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  17. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  18. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  19. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    NASA Astrophysics Data System (ADS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  20. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  1. Pulsed-laser deposition of oxides over large areas

    NASA Astrophysics Data System (ADS)

    Greer, James A.; Van Hook, H. J.

    1991-03-01

    Due to its short wavelength and high peak power the excimer laser has become the de facto choice for Pulsed Laser Deposition (PLD) of ceramic superconductors as well as other complex chemical compounds. This paper will describe a unique excimer-based laser deposition system which is capable of producing thin films of a variety of oxide compounds or other materials over large areas (up to 46 cm2). Well over a dozen chemical compounds have been deposited with this system for a wide variety of electronic applications. Also the PLD technique has been adapted to grow thin films on the internal surface of cored cylindrical substrates in order to form resonant microwave cavity structures. The uniformity morphology and electrical properties of films grown on both planar and cylindrical substrates will be discussed.

  2. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  3. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  4. Pulsed laser deposition of CdWO4 thin films

    NASA Astrophysics Data System (ADS)

    Kodu, M.; Avarmaa, T.; Jaaniso, R.; Leemets, K.; Mändar, H.; Nagirnyi, V.

    2016-10-01

    Thin CdWO4 films were produced on various substrates by pulsed laser deposition. A method of producing transparent films of high structural and optical quality on MgO substrate was developed. It is based on deposition of an amorphous film from a non-stoichiometric CdWO4-CdO target and a consequent crystallization of the film in oxygen atmosphere at 750 °C. The quality of the films produced was verified by x-ray diffraction, electron probe microanalysis, scanning electron microscopy, Raman and optical spectroscopy.

  5. [INVITED] Control of femtosecond pulsed laser ablation and deposition by temporal pulse shaping

    NASA Astrophysics Data System (ADS)

    Garrelie, Florence; Bourquard, Florent; Loir, Anne--Sophie; Donnet, Christophe; Colombier, Jean-Philippe

    2016-04-01

    This study explores the effects of temporal laser pulse shaping on femtosecond pulsed laser deposition (PLD). The potential of laser pulses temporally tailored on ultrafast time scales is used to control the expansion and the excitation degree of ablation products including atomic species and nanoparticles. The ablation plume generated by temporally shaped femtosecond pulsed laser ablation of aluminum and graphite targets is studied by in situ optical diagnostic methods. Taking advantage of automated pulse shaping techniques, an adaptive procedure based on spectroscopic feedback regulates the irradiance for the enhancement of typical plasma features. Thin films elaborated by unshaped femtosecond laser pulses and by optimized sequence indicate that the nanoparticles generation efficiency is strongly influenced by the temporal shaping of the laser irradiation. The ablation processes leading either to the generation of the nanoparticles either to the formation of plasma can be favored by using a temporal shaping of the laser pulse. Insights are given on the possibility to control the quantity of the nanoparticles. The temporal laser pulse shaping is shown also to strongly modify the laser-induced plasma contents and kinetics for graphite ablation. Temporal pulse shaping proves its capability to reduce the number of slow radicals while increasing the proportion of monomers, with the addition of ionized species in front of the plume. This modification of the composition and kinetics of plumes in graphite ablation using temporal laser pulse shaping is discussed in terms of modification of the structural properties of deposited Diamond-Like Carbon films (DLC). This gives rise to a better understanding of the growth processes involved in femtosecond-PLD and picosecond-PLD of DLC suggesting the importance of neutral C atoms, which are responsible for the subplantation process.

  6. Gold coating of micromechanical DNA biosensors by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rebollar, Esther; Sanz, Mikel; Esteves, Carina; Martínez, Nicolás F.; Ahumada, Óscar; Castillejo, Marta

    2012-10-01

    In this work, we describe the gold-coating of silicon microcantilever sensors by pulsed laser deposition (PLD) and their performance as DNA biosensors. To test optimum deposition conditions for coating the sensors, silicon substrates were gold coated by PLD using the fifth harmonic of a Nd:YAG laser (213 nm, pulse duration 15 ns). The gold deposits were characterized by atomic force microscopy and x-ray diffraction. The adequate conditions were selected for coating the sensors with a 20 nm thick gold layer and subsequently functionalized with a self-assembled monolayer of thiolated DNA. To verify PLD as a tool for gold coating of biomechanical sensors, they were characterized by using a scanning laser analyzer platform. Characterization consisted in the measurement of the differential stress of the cantilevers upon hydration forces before and after functionalization with a double-stranded DNA monolayer. The measurements showed that the sensor surface stress induced by the adsorption of water molecules is approximately seven times higher than that of functionalized sensors gold coated by thermal evaporation. These results indicate that gold coating by PLD could be an advantageous method to enhance the response of biomechanical sensors based on gold-thiol chemistry.

  7. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-06-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3C 2, as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  8. Pulsed Nd:YAG laser deposition of ruthenium thin films

    NASA Astrophysics Data System (ADS)

    Wai Keat, Lee

    Ruthenium (Ru) is one of the noble air-stable transition metals, which has excellent thermal chemical stability, low electrical resistivity, and relatively high work function near the valence band edge of Si. Recently, Ru has been introduced into the semiconductor industries as a result of the interesting chemical, physical, and electrical properties it possessed. So far, investigations of ruthenium films have been centered on material properties of Ru layers, growth using direct current/radiofrequency (DC/RF) magnetron sputtering, and chemical vapor deposition. However, comparatively little work has been carried out using the pulsed laser deposition (PLD) technique. In this research work, the growth of Ru film using PLD was investigated. The Ru films were deposited on silicon (Si) substrates employing 355 nm pulsed Nd:YAG laser source. Laser fluence ranged from 2 to 8 J/cm2 was employed, with deposition duration from 5 to 180 minutes under high vacuum condition. Optical emission spectroscopy (OES) was employed to study the species and purity of the plasma during the deposition. It was observed that intensity of the Ru species spectra increased with increasing laser fluence and more prominent after laser fluence of 4 J/cm2. No impurities were observed. Film thicknesses ranging from 15 to 280 nm were obtained. As the deposition duration and the laser fluence increased, the thickness of the deposited Ru films increased. It is observed that there was a critical deposition duration value, and this value increases as the laser fluence increased. X-ray diffraction (XRD) spectra showed Ru with crystalline orientation of (101), (100), and (002) peaks. The XRD results revealed an enhanced diffraction peak when film thickness increased, under all laser fluences. Grain sizes were deduced from the XRD data by using the Scherrer's formula and the values fall in the range of 20 to 35 nm for the film thickness covering from 50 nm to 250 nm. Besides, the electrical properties of

  9. Drastic deviations from stoichiometry transfer during pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dittrich, Arne; Eberl, Christian; Schlenkrich, Susanne; Schlenkrich, Felix; Döring, Florian; Krebs, Hans-Ulrich

    2016-04-01

    In common, one of the most characteristic properties of pulsed laser deposition is the stoichiometry transfer between target and substrate, which has been used heavily for many complex systems. In this paper we show that it is yet possible to obtain drastic deviations from stoichiometry transfer in a binary system by just varying the fluence during laser deposition. In the W-Cu system, the W concentration of films grown from a composite W60Cu40 target (60 wt% W) was indeed continuously changed over an unprecedented large range of 0-70 wt% W. Close to the deposition threshold, pure Cu films are formed due to the much higher vapor pressure of Cu. At higher laser fluences, more and more W-rich W-Cu alloy samples are obtained, since ion implantation and intermixing processes occur. These alloys can reach W contents even higher than that of the target because of enhanced resputtering and reflection of the lighter Cu atoms at the film surface. Stoichiometric films with 60 wt% of W are only obtained at laser fluences around 2.7 J/cm2, when the strong Cu evaporation from the target and reflection and resputtering effects of Cu at the film surface are in balance.

  10. Thermochromic VO2 on Zinnwaldite Mica by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mathevula, L.; Ngom, B. D.; Kotsedi, L.; Sechogela, P.; Doyle, T. B.; Ghouti, M.; Maaza, M.

    2014-09-01

    VO2 thin films have been deposited by pulsed laser deposition on Zinnwaldite Mica substrates. The crystal structure, chemical composition, morphology were determined and the semiconductor/metal transition (SMT) properties of the deposited films were investigated. Without any post annealing, the films exhibit a textured nature with a VO2 (0 1 1) preferred crystallographic orientation and an elevated thermal variation of the electric resistance ratio RS/RM through the SMT at T ≈ 68 °C of the order of 104 and a narrow ∼7 °C hysteresis. In addition, the growth of the VO2 crystallites seem to be governed likely by a Volmer-Weber or Stranski-Krastanov mechanisms and certainly not a Frank-van Der Merwe process.

  11. Resonant infrared pulsed laser deposition of a polyimide precursor

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2007-04-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

  12. Nanostructured films of Boron suboxide by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yu, Shengwen; Wang, Guanghou; Yin, Shuangye; Zhang, Yunxiang; Liu, Zhiguo

    2000-04-01

    We have prepared nanofilms of boron suboxide by the method of pulsed laser deposition (PLD) for the first time. Boron powder with purity of 99%+ was mixed with B 2O 3. The mixture was milled and then pressed into a pellet which was heated at 1200°C for one day. The heated pellet was used as the target for the experiment of PLD in preparing nanocluster-based films. Structural studies indicate that nanofilms contain the crystallized nanoclusters of B 6O with six-fold symmetry and icosahedron-like structure, which is the result of long range order packing.

  13. Pulsed laser deposition of ITO thin films and their characteristics

    SciTech Connect

    Zuev, D. A. Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-03-15

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

  14. Defects in zinc oxide grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ling, Francis C. C.; Wang, Zilan; Ping Ho, Lok; Younas, M.; Anwand, W.; Wagner, A.; Su, S. C.; Shan, C. X.

    2016-01-01

    ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4-2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

  15. Superhydrophobicity of polytetrafluoroethylene thin film fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kwong, H. Y.; Wong, M. H.; Wong, Y. W.; Wong, K. H.

    2007-09-01

    Superhydrophobic polytetrafluoroethylene (PTFE) thin films were obtained by pulsed laser deposition (PLD) technique carried out with KrF excimer laser ( λ = 248 nm) of about 1 J/cm 2 at a pressure of 1.33 Pa. The samples exhibit high water contact angle of about 170° and the sliding angle smaller than 2°. From studying the surface morphology of the prepared films, it is believed that the nano-scale surface roughness has enhanced the hydrophobic property of the PTFE. The increase of trapping air and reducing liquid-solid contact area due to the rough surface, as suggested by the Cassie-Baxter's model, should be responsible for superhydrophobicity of the PLD prepared films. This study thus provides a convenient one-step method without using wet-process to produce a superhydrophobic surface with good self-cleaning properties.

  16. Recent Advances in Pulsed Laser Deposition of Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.

    1997-03-01

    While pulsed laser deposition became popular with the emergance of high temperature superconductors the technique has been rapidly deployed in the development of a number of other oxide materials such as ferroelectric titanates, colossal magneto-resistive manganites, electro-optic tantalates and niobates(Pulsed Laser Deposition of Thin Films, eds. D.B. Chrisey and G.K. Hubler, John Wiley and Sons, New York, 1994.). Most recently this technique has also been used succesfully for the fabrication of a variety of semiconductor materials such as sulfides and nitrides with the Group II and Group III cationic species respectively. Details on the fabrication of a hetero-epitaxial family of AlN (Eg = 6.2 eV), GaN (Eg = 3.6 eV) and TiN (metallic with ρ = 14 μΩ-cm) on sapphire substrates will be discussed. Interesting results in the integration of oxides both as buffer layers for improved epitaxy on sapphire as well as conducting layers for both Ohmic and Schottky contacts on the nitrides will be discussed. Some recent details on the elimination of particles in the fabricated films by the use of off-axis deposition and by the use of a shadow mask and scalling issues will be elaborated on. Work in collaboration with R. Ramesh, R. P. Sharma, M. Rajeswari, Z. W. Dong, Z. Trajanovic, V. Talyanski, R. D. Vispute, L. Salamanca-Riba, (UMD); K. Jones, M. Wood, R. Lareau (ARL-SEDD, Fort Monmouth); M. Spenser (Howard U); S. M. Green, S. Harshavardhan and A. Pique (Neocera, Inc.).

  17. Calcium phosphate thin film processing by pulsed laser deposition and in situ assisted ultraviolet pulsed laser deposition.

    PubMed

    Nelea, V; Pelletier, H; Iliescu, M; Werckmann, J; Craciun, V; Mihailescu, I N; Ristoscu, C; Ghica, C

    2002-12-01

    Calcium orthophosphates (CaP) and hydroxyapatite (HA) were intensively studied in order to design and develop a new generation of bioactive and osteoconductive bone prostheses. The main drawback now in the CaP and HA thin films processing persists in their poor mechanical characteristics, namely hardness, tensile and cohesive strength, and adherence to the metallic substrate. We report here a critical comparison between the microstructure and mechanical properties of HA and CaP thin films grown by two methods. The films were grown by KrF* pulsed laser deposition (PLD) or KrF* pulsed laser deposition assisted by in situ ultraviolet radiation emitted by a low pressure Hg lamp (UV-assisted PLD). The PLD films were deposited at room temperature, in vacuum on Ti-5Al-2.5Fe alloy substrate previously coated with a TiN buffer layer. After deposition the films were annealed in ambient air at 500-600 degrees C. The UV-assisted PLD films were grown in (10(-2)-10(-1) Pa) oxygen directly on Ti-5Al-2.5Fe substrates heated at 500-600 degrees C. The films grown by classical PLD are crystalline and stoichiometric. The films grown by UV-assisted PLD were crystalline and exhibit the best mechanical characteristics with values of hardness and Young modulus of 6-7 and 150-170 GPa, respectively, which are unusually high for the calcium phosphate ceramics. To the difference of PLD films, in the case of UV-assisted PLD, the GIXRD spectra show the decomposition of HA in Ca(2)P(2)O(7), Ca(2)P(2)O(9) and CaO. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, increasing the tensile strength of the film, while the HA structure was destroyed.

  18. Recent progress in pulsed laser deposition of iron based superconductors

    NASA Astrophysics Data System (ADS)

    Haindl, Silvia; Molatta, Sebastian; Hiramatsu, Hidenori; Hosono, Hideo

    2016-09-01

    Pulsed laser deposition (PLD) is the most commonly used deposition technique for Fe-based superconductor thin films today. The number of grown compounds using PLD is still quite limited to so-called 11 compounds (FeTe x S y , FeSe1‑x Te x ) and 122 compounds (primarily Co- and P-substituted BaFe2As2). Especially in the growth of Fe-chalcogenides, PLD is challenged by the strong volatility of the elements and their non-negligible vapour pressure. In addition, in situ PLD of the high-temperature superconducting F-doped iron oxypnictides seemed to be feasible only under reactive deposition and stayed disregarded for some time. Here, we summarise the progress that was recently made in the growth of Fe-based superconducting thin films towards an improved control of thin film stoichiometry and the in situ growth of F-doped iron oxypnictides. The presented new ideas deviate from the standard approach of an adjustment of target composition. We first focus on the growth of FeSe1‑x Te x films, where the introduction of a buffer layer of same composition decreased surface roughness and allowed epitaxial film growth at reduced deposition temperatures with enhanced reproducibility. Second, we illustrate how F-doping in iron oxypnictide thin films can be obtained during in situ PLD using a diffusive reaction between substrate and the growing film.

  19. Recent progress in pulsed laser deposition of iron based superconductors

    NASA Astrophysics Data System (ADS)

    Haindl, Silvia; Molatta, Sebastian; Hiramatsu, Hidenori; Hosono, Hideo

    2016-09-01

    Pulsed laser deposition (PLD) is the most commonly used deposition technique for Fe-based superconductor thin films today. The number of grown compounds using PLD is still quite limited to so-called 11 compounds (FeTe x S y , FeSe1-x Te x ) and 122 compounds (primarily Co- and P-substituted BaFe2As2). Especially in the growth of Fe-chalcogenides, PLD is challenged by the strong volatility of the elements and their non-negligible vapour pressure. In addition, in situ PLD of the high-temperature superconducting F-doped iron oxypnictides seemed to be feasible only under reactive deposition and stayed disregarded for some time. Here, we summarise the progress that was recently made in the growth of Fe-based superconducting thin films towards an improved control of thin film stoichiometry and the in situ growth of F-doped iron oxypnictides. The presented new ideas deviate from the standard approach of an adjustment of target composition. We first focus on the growth of FeSe1-x Te x films, where the introduction of a buffer layer of same composition decreased surface roughness and allowed epitaxial film growth at reduced deposition temperatures with enhanced reproducibility. Second, we illustrate how F-doping in iron oxypnictide thin films can be obtained during in situ PLD using a diffusive reaction between substrate and the growing film.

  20. Electrochromic lithium nickel oxide thin film by pulsed laser deposition

    SciTech Connect

    Wen, S.J.; Rottkay, K. von; Rubin, M.

    1996-10-01

    * Thin films of lithium nickel oxide were deposited by pulsed laser deposition (PLD) from targets of pressed LiNiO{sub 2} powder with layered structure. The composition, structure and surface air sensitivity of these films were analyzed using a variety of techniques, such as nuclear reaction analysis, Rutherford backscattering spectrometry (RBS), x-ray diffraction, infrared spectroscopy, and atomic force microscopy. Optical properties were measured using a combination of variable angle spectroscopic ellipsometry and IP spectroradiometry. Crystalline structure, surface morphology and chemical composition of Li{sub x}Ni{sub 1-x}O thin films depend strongly on deposition oxygen pressure, temperature as well as substrate target distance. The films produced at temperatures lower than 600 degrees C spontaneously absorb CO{sub 2} and H{sub 2}O at their surface once they are exposed to the air. The films deposited at 600 degrees C proved to be stable in air over a long period. Even when deposited at room temperature the PLD films are denser and more stable than sputtered films. RBS determined that the best electrochromic films had the stoichiometric composition L{sub 0.5}Ni{sub 0.5}O when deposited at 60 mTorr O{sub 2} pressure. Electrochemical tests show that the films exhibit excellent reversibility in the range 1.0 V to 3.4 V versus lithium and long cyclic life stability in a liquid electrolyte half cell. Electrochemical formatting which is used to develop electrochromism in other films and nickel oxide films is not needed for these stoichiometric films. The optical transmission range is almost 70% at 550 nm for 120 nm thick films.

  1. Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition

    SciTech Connect

    Kolagani, R; Friedrich, S

    2008-06-25

    The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

  2. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

    SciTech Connect

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.

    1999-12-01

    We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

  3. Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin films

    NASA Astrophysics Data System (ADS)

    Stock, Michael; Molian, Pal

    2004-05-01

    Amorphous thin films (300-500 nm) of ultrahard AlMgB10 with oxygen and carbon impurities were grown on Si (100) substrates at 300 K using a solid target of AlMgB14 containing a spinel phase (MgAl2O4) and using a 120 fs pulsed, 800 nm wavelength Ti:sapphire laser. The films were subsequently annealed in argon gas up to 1373 K for 2 h. Scanning electron microscopy (SEM) was used to examine the particulate formation, atomic force microscopy was employed to characterize the film surface topography, x-ray diffraction and transmission electron microscopy were used to determine the microstructure, x-ray photoelectron spectroscopy was performed to examine the film composition, and nanoindentation was employed to study the hardness of thin films. The as-deposited and postannealed films (up to 1273 K) had a stochiometry of AlMgB10 with a significant amount of oxygen and carbon impurities and exhibited amorphous structures for a maximum hardness of 40+/-3 GPa. However, postannealing at higher temperatures led to crystallization and transformation of the film to SiB6 with a substantial loss in hardness. Results are also compared with our previous study on 23 ns, 248 nm wavelength (KrF excimer) pulsed laser deposition of AlMgB14 reported in this journal [Y. Tian, A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, J. E. Snyder, and P. A. Molian, J. Vac. Sci. Technol. A 21, 1055 (2003)]. .

  4. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  5. Properties of pulsed laser deposited fluorinated hydroxyapatite films on titanium

    SciTech Connect

    Rau, J.V.; Smirnov, V.V.; Laureti, S.; Generosi, A.; Varvaro, G.; Fosca, M.; Ferro, D.; Cesaro, S. Nunziante; Albertini, V. Rossi; Barinov, S.M.

    2010-09-15

    Fluorinated hydroxyapatite coated titanium was investigated for application as implant coating for bone substitute materials in orthopaedics and dentistry. Pulsed laser deposition technique was used for films preparation. Fluorinated hydroxyapatite target composition, Ca{sub 10}(PO{sub 4}){sub 6}F{sub 1.37}(OH){sub 0.63}, was maintained at 2 J/cm{sup 2} of laser fluence and 500-600 {sup o}C of the substrate temperature. Prepared films had a compact microstructure, composed of spherical micrometric-size aggregates. The average surface roughness resulted to be of 3 nm for the film grown at 500 {sup o}C and of 10 nm for that grown at 600 {sup o}C, showing that the temperature increase did not favour the growth of a more fine granulated surface. The films were polycrystalline with no preferential growth orientation. The films grown at 500-600 {sup o}C were about 8 {mu}m thick and possessed a hardness of 12-13 GPa. Lower or higher substrate temperature provides the possibility to obtain coatings with different fine texture and roughness, thus tayloring them for various applications.

  6. Stoichiometric transfer in pulsed laser deposition of hydroxylapatite

    NASA Astrophysics Data System (ADS)

    Arias, J. L.; Mayor, M. B.; Pou, J.; León, B.; Pérez-Amor, M.

    2000-02-01

    Hydroxylapatite (HA, Ca 10(PO 4) 6(OH) 2) is a calcium phosphate used as coating for dental and orthopaedical implants because its composition and structure is similar to the mineral part of bone. As an alternative to traditional plasma sprayed coating technique, pulsed laser deposition (PLD) has been applied due to its ability to reproduce complex stoichiometries. A hydroxylapatite target was ablated with an ArF laser in a water vapor atmosphere to investigate in which range of fluences the stoichiometric transfer to a titanium substrate is possible. The Ca/P ratio of the coatings was measured by energy dispersive spectroscopy (EDS), while their OH - and CO 32- content was evaluated by Fourier transform infrared spectroscopy (FT-IR) spectroscopy. The irradiated target surface was analyzed by scanning electron microscopy (SEM) and the ablation rate measured with a profilometer. While at higher fluences all the target material is congruently ablated and stoichiometry is transferred to the coatings, at lower fluences (<1.2 J cm -2) preferential ablation of Ca and strong out-difussion of CO 32- impurity as CO 2 takes place at the target. The incongruent melting of the hydroxylapatite target at low fluences provokes its enrichment in Ca. The higher Ca concentrations arriving to the substrate, together with the higher CO 2 partial pressure, yields enhanced substitution of PO 43- by CO 32- and increasing of the Ca/P ratio at the coating.

  7. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Duta, L.; Oktar, F. N.; Stan, G. E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I. N.

    2013-01-01

    We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  8. Pulsed laser deposition of organic semiconductor rubrene thin films

    NASA Astrophysics Data System (ADS)

    Grochowska, K.; Majumdar, S.; Laukkanen, P.; Majumdar, H. S.; Sawczak, M.; Śliwiński, G.

    2015-01-01

    Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V•s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.

  9. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    NASA Astrophysics Data System (ADS)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  10. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  11. Pulsed laser deposition and characterizations of pyrochlore iridate thin films

    NASA Astrophysics Data System (ADS)

    Starr, Matthew; Aviles-Acosta, Jaime; Xie, Yuantao; Zhu, Wenka; Li, Zhen; Chen, Aiping; Li, Nan; Tao, Chenggang; Jia, Quanxi; Heremans, J. J.; Zhang, S. X.

    Pyrochlore iridates have attracted growing interest in recent years because of their potential to realize novel topological phases. While most of the previous studies have focused on polycrystalline and single crystalline bulk samples, epitaxial thin films offer a unique platform for controllable tuning of material parameters such as oxygen stoichiometry and elastic strain to achieve new electronic states. In this talk, we will present the growth and characterizations of epitaxial thin films of pyrochlore Y2Ir2O7 and Bi2Ir2O7 that are predicted to host topologically non-trivial states. The iridate thin films were grown by pulsed laser deposition at different conditions, and a narrow window for epitaxial growth was determined. Characterizations of crystalline structures were performed using X-ray diffraction and transmission electron microscopy to establish a growth parameter-structure phase diagram. The compositions of thin films were determined by energy dispersive X-ray spectroscopy, and the surface morphologies were characterized using atomic force microscopy and scanning tunneling microscopy. Magneto-transport studies indicate a strong dependence of transport properties on the oxygen stoichiometry and the film thickness.

  12. Understanding the deposition mechanism of pulsed laser deposited B-C films using dual-targets

    SciTech Connect

    Zhang, Song; He, Zhiqiang; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng; Ji, Xiaoli; Lu, Wenzhong

    2014-04-21

    Boron carbide thin films with stoichiometry (boron-carbon atomic ratio) range of 0.1 ∼ 8.9 were fabricated via pulsed laser deposition by using boron-carbon dual-targets. However, this experimental data on stoichiometry were smaller than the computer simulation values. The discrepancy was investigated by studies on composition and microstructure of the thin films and targets by scanning electron microscopy, excitation laser Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the boron liquid droplets were formed by phase explosion after laser irradiation on boron sector. Part of the boron droplets would be lost via ejection in the direction of laser beam, which is tilted 45° to the surface of substrate.

  13. Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

    NASA Astrophysics Data System (ADS)

    Akkan, C. K.; May, A.; Hammadeh, M.; Abdul-Khaliq, H.; Aktas, O. C.

    2014-05-01

    Pulsed laser deposition (PLD) is one of the well-established physical vapor deposition methods used for synthesis of ultra-thin layers. Especially PLD is suitable for the preparation of thin films of complex alloys and ceramics where the conservation of the stoichiometry is critical. Beside several advantages of PLD, inhomogeneity in thickness limits use of PLD in some applications. There are several approaches such as rotation of the substrate or scanning of the laser beam over the target to achieve homogenous layers. On the other hand movement and transition create further complexity in process parameters. Here we present a new approach which we call Matrix Shaped PLD to control the thickness and homogeneity of deposited layers precisely. This new approach is based on shaping of the incoming laser beam by a microlens array and a Fourier lens. The beam is split into much smaller multi-beam array over the target and this leads to a homogenous plasma formation. The uniform intensity distribution over the target yields a very uniform deposit on the substrate. This approach is used to deposit carbide and oxide thin films for biomedical applications. As a case study coating of a stent which has a complex geometry is presented briefly.

  14. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    SciTech Connect

    Geohegan, D.B.

    1994-09-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

  15. Vitroceramic interface deposited on titanium substrate by pulsed laser deposition method.

    PubMed

    Voicu, Georgeta; Miu, Dana; Dogaru, Ionut; Jinga, Sorin Ion; Busuioc, Cristina

    2016-08-30

    Pulsed laser deposition (PLD) method was used to obtain biovitroceramic thin film coatings on titanium substrates. The composition of the targets was selected from SiO2-CaO-P2O5-(CaF2) systems and the corresponding masses were prepared using the sol-gel method. The depositions were performed in oxygen atmosphere (100mTorr), while the substrates were heated at 400°C. The PLD deposited films were analysed through different experimental techniques: X-ray diffraction, scanning (SEM, EDX) and transmission (HRTEM, SAED) electron microscopy and infra-red spectroscopy coupled with optical microscopy. They were also biologically tested by in vitro cell culture and the contact angle was determined. The bioevaluation results indicate a high biocompatibilty of the obtained materials, demonstrating their potential use for biomedical applications. PMID:26546909

  16. Vitroceramic interface deposited on titanium substrate by pulsed laser deposition method.

    PubMed

    Voicu, Georgeta; Miu, Dana; Dogaru, Ionut; Jinga, Sorin Ion; Busuioc, Cristina

    2016-08-30

    Pulsed laser deposition (PLD) method was used to obtain biovitroceramic thin film coatings on titanium substrates. The composition of the targets was selected from SiO2-CaO-P2O5-(CaF2) systems and the corresponding masses were prepared using the sol-gel method. The depositions were performed in oxygen atmosphere (100mTorr), while the substrates were heated at 400°C. The PLD deposited films were analysed through different experimental techniques: X-ray diffraction, scanning (SEM, EDX) and transmission (HRTEM, SAED) electron microscopy and infra-red spectroscopy coupled with optical microscopy. They were also biologically tested by in vitro cell culture and the contact angle was determined. The bioevaluation results indicate a high biocompatibilty of the obtained materials, demonstrating their potential use for biomedical applications.

  17. Pulsed-Laser Deposition of Electronic Oxides: Superconductor and Semiconductor Applications

    SciTech Connect

    Norton, D.P.; Park, C.; Lee, Y.E.; Budai, J.D.; Chisholm, M.F.; Verebelyi, D.T.; Christen, D.K.; Kroeger, D.M.

    2000-01-24

    Over the past decade, pulsed-laser deposition (PLD) has proven to be one of the most versatile and effective methods for obtaining high-quality electronic oxide thin-film materials. Much of this success can be attributed to its initial use in depositing high temperature superconducting materials. However, pulsed-laser deposition is now a leading research tool in the development of various electronic oxide thin-film technologies, In this paper, recent progress in the deposition of oxide materials on dissimilar materials for both superconductor and semiconductor applications is discussed. Recent developments in the synthesis of superconducting wires via epitaxial growth of superconducting oxides on biaxially textured metal tapes is described. In addition, efforts to integrate high-k dielectric oxides on semiconductor surfaces using pulsed-laser deposition are highlighted.

  18. Electrical properties of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods

    NASA Astrophysics Data System (ADS)

    Panosyan, Zhosef R.; Voskanyan, Serjik S.; Yengibaryan, Yerem V.; Avjyan, Karapet E.; Khachatryan, Ashot M.; Matevosyan, Lenrik A.

    2010-10-01

    Electrical characteristics of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods were investigated. The mechanisms of carrier flow across the fabricated junctions were analyzed. Keywords: ion-assisted plasma-enhanced deposition, pulsed laser deposition, DLC- (n, p)-Si heterojunctions, currentvoltage & capacitance- voltage characteristics.

  19. Method for controlling energy density for reliable pulsed laser deposition of thin films

    SciTech Connect

    Dowden, P. C. E-mail: qxjia@lanl.gov; Bi, Z.; Jia, Q. X. E-mail: qxjia@lanl.gov

    2014-02-15

    We have established a methodology to stabilize the laser energy density on a target surface in pulsed laser deposition of thin films. To control the focused laser spot on a target, we have imaged a defined aperture in the beamline (so called image-focus) instead of focusing the beam on a target based on a simple “lens-focus.” To control the laser energy density on a target, we have introduced a continuously variable attenuator between the output of the laser and the imaged aperture to manipulate the energy to a desired level by running the laser in a “constant voltage” mode to eliminate changes in the lasers’ beam dimensions. This methodology leads to much better controllability/reproducibility for reliable pulsed laser deposition of high performance electronic thin films.

  20. Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

    NASA Technical Reports Server (NTRS)

    Ianno, N. J.; Liou, S. H.; Woollam, John A.; Thompson, D.; Johs, B.

    1990-01-01

    Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox.

  1. Direct deposition of YBCO on polished Ag substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Dorris, S. E.; Maroni, V. A.; Miller, D. J.; Balachandran, U.

    2002-09-01

    YBCO thin films were directly deposited on mechanically polished nontextured silver (Ag) substrates at elevated temperature by pulsed laser deposition with various inclination angles of 35°, 55°, and 72°. Strong fiber texture, with the c-axis parallel to the substrate normal was detected by X-ray diffraction pole figure analysis. Atomic force microscopy and scanning electron microscopy images revealed that a few a-axis-oriented grains were dispersed on the top surface of the YBCO films. Transmission electron microscopy revealed dense amorphous layer at the interface between the YBCO film and the Ag substrate. Energy dispersive spectrum analysis indicates that the YBCO film deposited on the Ag substrate is slightly Cu-deficient. A YBCO film deposited at 755 °C and an inclination angle of 55° exhibited Tc=90 K. Transport critical current density measured by the four-probe method at 77 K in self-field was ≈2.7×10 5 A/cm 2. This work demonstrated a simple and inexpensive method to fabricate YBCO-coated conductors with high critical current density.

  2. Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orlianges, J.-C.; Leroy, J.; Crunteanu, A.; Mayet, R.; Carles, P.; Champeaux, C.

    2012-09-01

    Nanostructured vanadium dioxide is one of the most interesting and studied member of the vanadates family performing a reversible transition from an insulating state to a metallic state associated with a structural transition when heated above a temperature of 68 °C. On the other hand, noble metal nanoparticles (NPs) support localized surface plasmon resonance which causes selective absorption bands in the visible and near-IR regions. The purpose of this letter is to study structural, optical, and electrical properties of vanadium dioxide thin films containing gold nanoparticles synthetized using pulsed laser deposition process. Thus, we have performed x-ray diffraction, optical transmission, and four point probe electrical measurements to investigate the nanocomposite properties versus its temperature. Interestingly, we have observed switching behavior for VO2 film containing gold NPs with a resistivity contrast of four orders of magnitude and a decrease of its transition temperature.

  3. Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

    SciTech Connect

    Gayathri, S.; Sridharan, M. E-mail: m.sridharan@ece.sastra.edu; Kumar, N.; Krishnan, R. E-mail: m.sridharan@ece.sastra.edu; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.

    2013-12-15

    Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp{sup 2} bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp{sup 3} domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp{sup 2} fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm{sup 2}. The super low friction mechanism is explained by low sliding resistance of a-C/sp{sup 2} and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm{sup 2} is related to widening of the intergrain distance caused by transformation from sp{sup 2} to sp{sup 3} hybridized structure.

  4. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    SciTech Connect

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  5. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    NASA Astrophysics Data System (ADS)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  6. The controlled pulsed laser deposition of Ag nanoparticle arrays for surface enhanced Raman scattering.

    PubMed

    D'Andrea, C; Neri, F; Ossi, P M; Santo, N; Trusso, S

    2009-06-17

    An effective method for the production of surface enhanced Raman scattering (SERS) active substrates is presented. Nanostructured silver thin films are pulsed laser deposited in an argon atmosphere. The films consist of arrays of nanoparticles whose size is controlled by the Ar pressure. The surface morphology of the films can be tuned by the laser pulse number. Nanoparticle size is calculated by a phenomenological model taking into account the dynamics of the laser generated silver plasma. The SERS activity of the films is investigated by Raman scattering of adsorbed rhodamine 6G at different concentrations.

  7. Deposition of biopolymer thin films by matrix assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Cristescu, R.; Mihaiescu, D.; Socol, G.; Stamatin, I.; Mihailescu, I. N.; Chrisey, D. B.

    We report on the successful deposition of high quality type I fibrilar collagen thin films by Matrix assisted pulsed laser evaporation (MAPLE). Thin films deposition was performed in a N2 ambient (20 Pa) using a KrF* laser source (λ=248 nm,τ>=20 ns) operated at a repetition rate of 3 Hz, the incident laser energy at a value within the range (20-35)mJ , and the laser spot area was (3.5-18.5)+/-0.1 mm2. The collagen films were deposited on double face polished <100> single crystalline Si wafers and characterized by Fourier transform infrared spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. We demonstrate that our thin films are composed of collagen, with no impurities and the roughness can be controlled by the deposition conditions.

  8. Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

    SciTech Connect

    Melaibari, Ammar A.; Molian, Pal

    2012-11-15

    Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered 'brick-bridge-mortar' nacre of AlMgB{sub 14} (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB{sub 14}. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB{sub 14}/Ti system revealed that the brick is to be 250 nm thick, 9 {mu}m lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

  9. Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

    NASA Astrophysics Data System (ADS)

    Melaibari, Ammar A.; Molian, Pal

    2012-11-01

    Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered "brick-bridge-mortar" nacre of AlMgB14 (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB14. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB14/Ti system revealed that the brick is to be 250 nm thick, 9 μm lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

  10. Chromium Carbide Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition

    NASA Astrophysics Data System (ADS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Terajima, Ryou; Emura, Masanari

    1999-06-01

    Chromium carbide thin films are synthesized on Si(100)substrates by a pulsed Nd:YAG laser deposition method at differentsubstrate temperatures. Glancing-angle X-ray diffraction shows that acrystalline chromium carbide film can be prepared at the substratetemperature of 700°C. Grain size of the films, examined witha field-emission secondary electron microscope, increases withincreasing substrate temperature.

  11. Improved passivation of the ZnO/Si interface by pulsed laser deposition

    SciTech Connect

    Gluba, M. A.; Nickel, N. H.; Rappich, J.; Hinrichs, K.

    2013-01-28

    Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of Almost-Equal-To 10{sup 12} cm{sup -2}. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.

  12. Grain growth of Ni-based superalloy IN718 coating fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yaocheng; Yang, Li; Dai, Jun; Huang, Zedong; Meng, Tao

    2016-06-01

    The pulsed laser deposited Ni-based superalloy coating was fabricated with successive 12 layers using single tracks. The microstructure of the deposited coating was observed by scanning electron microscopy (SEM). The grain growth and the grain boundary misorientation were investigated by electron backscatter diffraction (EBSD), the precipitation phase was determined by transmission electron microscope (TEM). The results showed that the dendrites were the most common microstructure in the coating, and the dendritic growth orientation was paralleled to the direction of the laser deposition. The dendrite got coarser and its space was increased with increasing laser deposited layers. Most grains grew along the preferential grain orientation <001> and formed anisotropy with grain boundaries misorientation angle about 2° in the pulsed laser deposited coating. The grain size along the texture orientation was 3-10 times larger than that in the transverse orientation. The cross section microhardness of the coating ranged between 240-280 HV, and decreased along the depositional direction due to the reasons of the variation of eutectic morphology, grain size distribution, grain misorientation and a small amounts of strengthening phase precipitation.

  13. Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks

    SciTech Connect

    Mahjouri-Samani, Masoud; Gresback, Ryan G; Tian, Mengkun; Puretzky, Alexander A; Rouleau, Christopher M; Eres, Gyula; Ivanov, Ilia N; Xiao, Kai; McGuire, Michael A; Duscher, Gerd; Geohegan, David B

    2014-01-01

    Here we explore pulsed laser deposition (PLD), a well known and versatile synthesis method principally used for epitaxial oxide thin film growth, for the synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser vaporized material from bulk GaSe targets in Ar background gas. Uniform coverage of interconnected, crystalline, few-layer, photoresponsive GaSe nanosheets in both in-plane and out-of-plane orientations were achieved under different ablation plume conditions over ~1.5 cm2 areas. Plume propagation was characterized by in situ ICCD-imaging. High (1 Torr) Ar background gas pressures were found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1-3 layer GaSe triangular nanosheets of ~ 200 nm domain size were formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increased linearly with pulse number, adding layers in a two-dimensional (2D) growth mode while maintaining a surface roughness of 2 GaSe layers for increasing overall thickness. Field effect transistors using these interconnected crystalline GaSe networks showed p-type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V-1s-1. Spectrally-resolved photoresponsivities and external quantum efficiencies ranged from 0.4 AW-1 and 100% at 700 nm, to 1.4 AW-1 and 600 % at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit photoresponsive networks of 2D nanosheets with digital thickness control and substrate-scale uniformity for a variety of applications.

  14. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  15. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  16. Pulsed laser deposition and refractive index measurement of fully substituted bismuth iron garnet films

    NASA Astrophysics Data System (ADS)

    Tepper, T.; Ross, C. A.

    2003-08-01

    A systematic study of the pulsed-laser deposition of fully substituted bismuth iron garnet (BIG, or Bi 3Fe 5O 12) has been carried out. Garnet-structure BIG films grow epitaxially onto gallium gadolinium garnet substrates under deposition conditions that lead to a stoichiometric film. The variation of stoichiometry with deposition conditions is discussed. The refractive index, n, of BIG decreases from 2.819 at 633 nm to 2.584 at 1550 nm, with an imaginary part, k, less than 0.05.

  17. The minimum amount of "matrix" needed for matrix-assisted pulsed laser deposition of biomolecules.

    PubMed

    Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin; Mortensen, Ninell P; Dinescu, Maria; Schou, Jørgen; Zhigilei, Leonid V

    2014-11-20

    The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE film deposition, however, is the presence of residual solvent (matrix) codeposited with the polymer material and adversely affecting the quality of the deposited films. In this work, we investigate the possibility of alleviating this problem by reducing the amount of matrix in the target. A series of coarse-grained molecular dynamics simulations are performed for a model lysozyme-water system, where the water serves the role of volatile "matrix" that drives the ejection of the biomolecules. The simulations reveal a remarkable ability of a small (5-10 wt %) amount of matrix to cause the ejection of intact bioorganic molecules. The results obtained for different laser fluences and water concentrations are used to establish a "processing map" of the regimes of molecular ejection in matrix-assisted pulsed laser deposition. The computational predictions are supported by the experimental observation of the ejection of intact lysozyme molecules from pressed lysozyme targets containing small amounts of residual water. The results of this study suggest a new approach for deposition of thin films of bioorganic molecules with minimum chemical modification of the molecular structure and minimum involvement of solvent into the deposition process.

  18. Pulsed laser deposition of Al-doped ZnO films on glass and polycarbonate

    NASA Astrophysics Data System (ADS)

    Tan, Kwan Chu; Lee, Yen Sian; Yap, Seong Ling; Kok, Soon Yie; Nee, Chen Hon; Siew, Wee Ong; Tou, Teck Yong; Yap, Seong Shan

    2014-01-01

    Al-doped ZnO (AZO) films were deposited on glass and polycarbonate (PC) at room temperature by using pulsed Nd:YAG laser at 355 nm. AZO thin films were obtained for both substrates at laser fluences from 2 to 5 J/cm2 in O2 partial pressure of 2.1 Pa. The effects of laser fluence on the structural, electrical, and optical properties of the films were investigated. The films with lowest resistivity and highest transmittance have been obtained at 2 J/cm2. The resistivities were 2.29×10-3 Ω cm for AZO on glass and 1.49×10-3 Ω cm for AZO on PC. With increasing laser fluence, the deposited films have lower crystallinity, higher resistivity, and smaller optical bandgap.

  19. Tunable stoichiometry of SiOx-BaTiOy-BOz fabricated by multitarget pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Jones, John G.; Goldstein, Jonathan T.; Smith, Steven R.; Landis, Gerald R.; Grazulis, Lawrence; Sun, Lirong; Murphy, Neil R.; Kozlowski, Gregory; Jakubiak, Rachel; Stutz, Charles E.

    2015-01-01

    Oxide materials of desired stoichiometry are challenging to make in small quantities. Nanostructured thin films of multiple oxide materials were obtained by using pulsed laser deposition and multiple independent targets consisting of Si, BaTiO3, and B. Programmable stoichiometry of nanostructured thin films was achieved by synchronizing a 248-nm krypton fluoride excimer laser at an energy of 300 mJ/pulse, a galvanometer mirror system, and the three independent target materials with a background pressure of oxygen. Island growth occurred on a per pulse basis; some 500 pulses are required to deposit 1 nm of material. The number of pulses on each target was programmed with a high degree of precision. Trends in material properties were systematically identified by varying the stoichiometry of multiple nanostructured thin films and comparing the resulting properties measured using in situ spectroscopic ellipsometry, capacitance measurements including relative permittivity and loss, and energy dispersive spectroscopy (EDS). Films were deposited ˜150 to 907 nm thickness, and in situ ellipsometry data were modeled to calculate thickness n and k. A representative atomic force microscopy measurement was also collected. EDS, ellipsometry, and capacitance measurements were all performed on each of the samples, with one sample having a calculated permittivity greater than 20,000 at 1 kHz.

  20. Photoemission Studies of Metallic Photocathodes Prepared by Pulsed Laser Ablation Deposition Technique

    SciTech Connect

    Fasano, V.; Lorusso, A.; Perrone, A.; De Rosa, H.; Cultrera, L.

    2010-11-10

    We present the results of our investigation on metallic films as suitable photocathodes for the production of intense electron beams in RF photoinjector guns. Pulsed laser ablation deposition technique was used for growing Mg and Y thin films onto Si and Cu substrates in high vacuum and at room temperature.Different diagnostic methods were used to characterize the thin films deposited on Si with the aim to optimize the deposition process. Photoelectron performances were investigated on samples deposited on Cu substrate in an ultra high vacuum photodiode chamber at 10{sup -7} Pa. Relatively high quantum efficiencies have been obtained for the deposited films, comparable to those of corresponding bulks. Samples could stay for several months in humid open air before being tested in a photodiode cell. The deposition process and the role of the photocathode surface contamination and its influence on the photoelectron performances are presented and discussed.

  1. Fabricating functionally graded films with designed gradient profiles using pulsed laser deposition

    SciTech Connect

    Won, Yoo Jai; Ki, Hyungson

    2013-05-07

    A novel picosecond-laser pulsed laser deposition method has been developed for fabricating functionally graded films with pre-designed gradient profiles. Theoretically, the developed method is capable of precisely fabricating films with any thicknesses and any gradient profiles by controlling the laser beam powers for the two different targets based on the film composition profiles. As an implementation example, we have successfully constructed functionally graded diamond-like carbon films with six different gradient profiles: linear, quadratic, cubic, square root, cubic root, and sinusoidal. Energy dispersive X-ray spectroscopy is employed for investigating the chemical composition along the thickness of the film, and the deposition profile and thickness errors are found to be less than 3% and 1.04%, respectively. To the best of the authors' knowledge, this is the first method for fabricating films with designed gradient profiles and has huge potential in many areas of coatings and films, including multifunctional optical films. We believe that this method is not only limited to the example considered in this study, but also can be applied to all material combinations as long as they can be deposited using the pulsed laser deposition technique.

  2. Fabrication of multi-layered polymer LEDs by resonant infrared pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Johnson, S. L.; Park, H. K.; Haglund, R. F., Jr.

    2007-09-01

    Multi-layered polymer light-emitting diodes (PLEDs) have been fabricated in a vacuum environment by resonant infrared pulsed-laser deposition of the polymer layers. The light emitter used was poly[2-methoxy-5-(2- ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), and in some cases a layer of the hole-transport polymer poly(3,4 etylenedioxythiophene:polystyrenesulfonate) (PEDOT:PSS) was also laser deposited, resulting in a device structure of ITO/PEDOT:PSS/MEH-PPV/Al. Fourier transform infrared (FTIR) spectroscopy confirmed that neither of the laser-deposited polymers was significantly altered by the deposition process. Laser-fabricated devices displayed electroluminescent spectra similar to those of conventional spin-coated devices, but the differences in electrical characteristics and device efficiency were substantial. These discrepancies can probably be attributed to surface roughness of the deposited polymer layers. With the appropriate refinement of the deposition protocols, however, we believe that this process can be improved to a level that is suitable for routine fabrication of organic electronic components.

  3. Biocompatible nanocrystalline octacalcium phosphate thin films obtained by pulsed laser deposition.

    PubMed

    Socol, G; Torricelli, P; Bracci, B; Iliescu, M; Miroiu, F; Bigi, A; Werckmann, J; Mihailescu, I N

    2004-06-01

    We extended for the first time pulsed laser ablation to the deposition of octacalcium phosphate Ca8H2(PO4)6.5H2O (OCP) thin films. The depositions were performed with a pulsed UV laser source (lambda=248 nm, tau> or =20 ns) in a flux of hot water vapors. The targets were sintered from crystalline OCP powder and the laser ablation fluence was set at values of 1.5-2 J/cm2. During depositions the collectors, Si or Ti substrates, were maintained at a constant temperature within the range 20-200 degrees C. The resulting structures were submitted to heat treatment in hot water vapors for up to 6 h. The best results were obtained at a substrate temperature of 150 degrees C during both deposition and post-deposition treatment. High-resolution electron microscopy and XRD at grazing incidence indicated that the coatings obtained were made of nanocrystalline OCP. Cross-section TEM investigations showed that the coatings contained droplets stacked on Ti substrates as well as distributed across the entire thickness of the arborescence-like structure layers. The results of WST-1 assay, cell adherence, DNA replication, and caspase-1 activity confirmed the good biocompatibility of the coatings.

  4. Characterization of Environmental Stability of Pulsed Laser Deposited Oxide Ceramic Coatings

    SciTech Connect

    ADAMS, THADM

    2004-03-02

    A systematic investigation of candidate hydrogen permeation materials applied to a substrate using Pulsed Laser Deposition has been performed. The investigation focused on application of leading permeation-resistant materials types (oxide, carbides, and metals) on a stainless steel substrate. and evaluation of the stability of the applied coatings. Type 304L stainless steel substrates were coated with aluminum oxide, chromium oxide, and aluminum. Characterization of the coating-substrate system adhesion was performed using scratch adhesion testing and microindentation. Coating stability and environmental susceptibility were evaluated for two conditions-air at 350 degrees Celsius and Ar-H2 at 350 degrees Celsius for up to 100 hours. Results from this study have shown the pulsed laser deposition process to be an extremely versatile technology that is capable of producing a sound coating/substrate system for a wide variety of coating materials.

  5. Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model

    NASA Astrophysics Data System (ADS)

    Singh, Rajiv K.; Narayan, J.

    1990-05-01

    We have studied in detail the physical phenomena involved in the interaction of high-powered nanosecond excimer-laser pulses with bulk targets resulting in evaporation, plasma formation, and subsequent deposition of thin films. A theoretical model for simulating these laser-plasma-solid interactions has been developed. In this model, the laser-generated plasma is treated as an ideal gas at high pressure and temperature, which is initially confined in small dimensions, and is suddenly allowed to expand in vacuum. The three-dimensional expansion of this plasma gives rise to the characteristic spatial thickness and compositional variations observed in laser-deposited thin films of multicomponent systems. The forward-directed nature of the laser evaporation process has been found to result from anisotropic expansion velocities of the atomic species which are controlled by the dimensions of the expanding plasma. Based on the nature of interaction of the laser beam with the target and the evaporated material, the pulsed-laser evaporation (PLE) process can be classified into three separate regimes: (i) interaction of the laser beam with the bulk target, (ii) plasma formation, heating, and initial three-dimensional isothermal expansion, and (iii) adiabatic expansion and deposition of thin films. The first two processes occur during the time interval of the laser pulse, while the last process initiates after the laser pulse terminates. Under PLE conditions, the evaporation of the target is assumed to be thermal in nature, while the plasma expansion dynamics is nonthermal as a result of interaction of the laser beam with the evaporated material. The equations of compressible gas dynamics are set up to simulate the expansion of the plasma in the last two regimes. The solution of the gas-dynamics equations shows that the expansion velocities of the plasma are related to its initial dimensions and temperature, and the atomic weight of the species. Detailed simulations analyzing

  6. Isotopically Enriched Films and Nanostructures by Ultrafast Pulsed Laser Deposition

    SciTech Connect

    Peter Pronko

    2004-12-13

    This project involved a systematic study to apply newly discovered isotopic enrichment effects in laser ablation plumes to the fabrication of isotopically engineered thin films, superlattices, and nanostructures. The approach to this program involved using ultrafast lasers as a method for generating ablated plasmas that have preferentially structured isotopic content in the body of the ablation plasma plumes. In examining these results we have attempted to interpret the observations in terms of a plasma centrifuge process that is driven by the internal electro-magnetic fields of the plasma itself. The research plan involved studying the following phenomena in regard to the ablation plume and the isotopic mass distribution within it: (1) Test basic equations of steady state centrifugal motion in the ablation plasma. (2) Investigate angular distribution of ions in the ablation plasmas. (3) Examine interactions of plasma ions with self-generated magnetic fields. (3) Investigate ion to neutral ratios in the ablation plasmas. (5) Test concepts of plasma pumping. (6) Fabricate isotopically enriched nanostructures.

  7. Enhanced localized superconductivity in Sr2RuO4 thin film by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cao, J.; Massarotti, D.; Vickers, M. E.; Kursumovic, A.; Di Bernardo, A.; Robinson, J. W. A.; Tafuri, F.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-09-01

    Superconducting c-axis-oriented Sr2RuO4 thin film has been fabricated using pulsed laser deposition. Although the superconductivity is localized, the onset critical temperature is enhanced over the bulk value. X-ray microstructural analysis of Sr2RuO4 superconducting and non-superconducting thin films suggests the existence of the localized stacking faults and an overall c-axis lattice expansion which may account for the locally enhanced superconductivity.

  8. Pulsed laser deposition and in vitro characteristics of triphasic - HASi composition on titanium.

    PubMed

    Palangadan, Rajesh; Sukumaran, Anil; Fernandez, Francis B; John, Annie; Varma, Harikrishna

    2014-02-01

    Pulsed laser deposition was used to deposit bioactive triphasic glass-ceramic composition (HASi) over titanium substrate using dense HASi target. Bioactive glass compositions are considered the most useful synthetic materials for immediate bone attachment because of its bioresorption, osteoconduction and osteointegration characteristics under in vivo conditions. The disadvantage of its brittleness associated with bioactive glass-ceramics has prompted its coating over metallic implants for the combination of duo mechanical and bioactive properties. The hard HASi target was able to undergo laser ablation under ambient gas pressure without bulk erosion of the target. Laser deposition was found to be efficient in depositing triphasic composition for immediate bone integration. The target and deposits were analyzed for the phase, composition and microstructural characteristics by means of X-ray diffraction, Fourier transform infrared spectroscopy, energy-dispersive X-ray analysis and scanning electron microscopy. Simultaneously, the adherent nature and mechanical behaviour of deposits were confirmed by scratch test and micro-indentation methods. Further, the in vitro dissolution and bioactivity were assessed by soaking in simulated body fluid followed by elemental analysis using inductively coupled plasma spectroscopy. The deposits were found to be cell-friendly, which was indicated by the phenomenology of stem cells under in vitro conditions.

  9. Method for continuous control of composition and doping of pulsed laser deposited films

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1995-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  10. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1996-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  11. Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Mardare, A. I.; Mardare, C. C.; Fernandes, J. R. A.; Vilarinho, P. M.; Joanni, E.

    2003-08-01

    Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO2/Ti/Pt substrates with a high deposition rate. The temperatures used ranged between 400 ^circ C and 700 ^circ C. As the deposition temperature was increased, the films assumed a strong (222) preferential orientation. This orientation of the electrodes was reflected on the PZT films, having a very big influence on their ferroelectric behavior. The PZT films made over BPO deposited at high temperature presented high values of remanent polarization (43 μC/cm^2) but indications of high leakage currents could be observed in the hysteresis loops. By using BPO bottom electrodes, a 30% improvement in the fatigue behavior of PZT capacitors when compared with the normal platinum electrodes was observed.

  12. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  13. Cubic AlN thin film formation on quartz substrate by pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Biju, Zheng; Wen, Hu

    2016-06-01

    Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere. A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source. In order to study the influence of the process parameters on the deposited AlN film, the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm2, substrate temperature from room temperature to 800 °C and nitrogen pressure from 0.1 to 50 Pa. X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films. It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature 600-800 °C, nitrogen pressure 10-0.1 Pa and a moderate laser energy density (190 J/cm2). The high quality AlN film exhibited good optical property. Project supported by the Yunnan Provincial Natural of Science Foundation of China (No. KKSY201251089).

  14. Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

    SciTech Connect

    Masina, B. N. E-mail: slafane@cdta.dz; Lafane, S. E-mail: slafane@cdta.dz; Abdelli-Messaci, S.; Kerdja, T.; Wu, L.; Akande, A. A.; Mwakikunga, B.

    2015-10-28

    Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

  15. Characterization Of Fe{sub 1-x}Co{sub x}Si Thin Films Deposited Via Pulsed Laser Deposition

    SciTech Connect

    Manyala, N.; Ngom, Balla; Kana-Kana, J. B.; Bucher, Remy; Maaza, M.; Di Tusa, J. F.

    2008-09-23

    We report on the structural and morphological characterization of B20 cubic structure Fe{sub 1-x}Co{sub x}Si thin films grown by pulsed laser deposition for the concentration range 0{<=}x{<=}0.3 deposited on Si (111) substrate. The x-ray diffraction, Rutherford back scattering (RBS), Scanning Electron microscopy (SEM) and Atomic force microscopy (AFM) of the films show that all the films are single phase B20 cubic structure with concentrations close to expected values, very smooth and dense with surface roughness less than 0.8 nm.

  16. Magnetic properties of pulsed laser deposition-fabricated isotropic Fe-Pt film magnets

    SciTech Connect

    Nakano, M.; Oniki, W.; Yanai, T.; Fukunaga, H.

    2011-04-01

    A high-speed pulsed laser deposition method with the deposition rate of several tens of microns per 1 h enabled us to obtain isotropic Fe-Pt thick film magnets. Increase in the laser power enabled us to obtain as-deposited films with L1{sub 0} ordered phase due to the heat radiation from a target, which means that a substrate heating system and a post-annealing process are not required to achieve hard magnetic properties in the process. Use of an Fe-rich target enhanced the magnetic properties, and as a result (BH){sub max} value exceeded 100 kJ/m{sup 3} in an isotropic Fe-Pt film fabricated at the power of 3 W, which was comparable to those of isotropic Fe-Pt thick film magnets prepared by a sputtering method.

  17. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGESBeta

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  18. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  19. Removal of the deposition on JT-60 tile by nano-sec pulsed-laser irradiation

    NASA Astrophysics Data System (ADS)

    Sugiyama, K.; Sakawa, Y.; Tanabe, T.; Watanabe, D.; Shibahara, T.; Masaki, K.

    2010-10-01

    To clarify the property of tritium removal from carbon codeposition by using pulsed-laser induced desorption, hydrogen removal from co-deposits on JT-60 divertor tile using a fourth-harmonic emission (266 nm) of a nano-sec Nd:YAG laser was demonstrated. The threshold laser fluence for ablation was ˜0.3 J/cm 2, which was slightly higher compared to that of the pico-sec laser irradiation. The energy absorption coefficient for the nano-sec laser, which was obtained by fitting the removal rate by so-called Beer's law, was larger than the pico-sec laser. Since the time constant of thermal wave propagation into the target is of the order of nano-sec, such differences between nano- and pico-sec lasers could be attributed to thermal effects. The ablation threshold of the deposited layer was lower than that of a pure graphite, which could be attributed to the difference of thermal conductivity between deposited layer and pure graphite. The removal rate of the nano-sec laser was higher than that of pico-sec laser in the fluence range of >˜0.5 J/cm 2. On the other hand, the production ratio [hydrocarbon species]/[H 2] continuously increased with the laser fluence, and no significant ionization of carbon was observed in this fluence range. This indicated that the fluence range in this study was "weak"-ablation range, which was still not sufficient to minimize the hydrocarbon production.

  20. In vivo evaluation of titanium implants coated with bioactive glass by pulsed laser deposition.

    PubMed

    Borrajo, Jacinto P; Serra, Julia; González, Pío; León, Betty; Muñoz, Fernando M; López, M

    2007-12-01

    During the past years, different techniques, like chemical treatment, plasma spraying, sputtering, enamelling or sol-gel; and materials, like metals, hydroxylapatite, calcium phosphates, among others, have been applied in different combinations to improve the performance of prostheses. Among the techniques, Pulsed Laser Deposition (PLD) is very promising to produce coatings of bioactive glass on any metal alloy used as implant. In this work the biocompatibility of PLD coatings deposited on titanium substrates was examined by implantation in vivo. Different coating compositions were checked to find the most bioactive that was then applied on titanium and implanted into paravertebral muscle of rabbit.

  1. Preparation of mixed bismuth and iron thin films by pulsed laser deposition using powder targets

    NASA Astrophysics Data System (ADS)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Yuki; Suda, Yoshiaki

    2016-01-01

    Bismuth iron garnet (Bi3Fe5O12) thin films, for use in magnetic optics, were prepared by a pulsed laser deposition method using Bi and Fe mixed powder targets in oxygen gas. The deposition rate of the film strongly depended on the target mixture. The X-ray diffraction and X-ray photoelectron spectroscopy results suggest that the prepared films were not Bi3Fe5O12 but Bi-rich films, because of the lower melting temperature of Bi (544 K) compared with that of Fe (1811 K).

  2. Preparation and characterization of YBCO coating on metallic RABiT substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gonal, M. R.; Prajapat, C. L.; Igalwar, P. S.; Maji, B. C.; Singh, M. R.; Krishnan, M.

    2016-05-01

    Superconducting YBCO films are coated on metallic Rolling Assisted Bi-axially Textured Substrates (RABiTS) Ni-5wt % W (NiW) (002) substrate using pulsed laser deposition (PLD) system. Targets of YBa2Cu3O7-δ (YBCO) and buffer layers of Ceria and 8 mole % Yttria Stabilized Zirconia (YSZ) of high density are synthesized. At each stage of deposition coatings are characterized by XRD. Transport studies show superconducting nature of YBCO only when two successive buffer layers of YSZ and CeO2 are used.

  3. X-ray absorption study of pulsed laser deposited boron nitride films

    SciTech Connect

    Chaiken, A.; Terminello, L.J.; Wong, J.; Doll, G.L.; Sato, T.

    1994-02-02

    B and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion- assisted pulsed laser deposition. Comparison of the films` spectra to those of several single-phase BN powder standards shows that the films consist primarily of sp{sup 2} bonds. Other features in the films`s spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.

  4. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition.

  5. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition. PMID:22105226

  6. Micro-droplet deposition by UV-pulsed laser induced forward transfer direct writing technology

    NASA Astrophysics Data System (ADS)

    Lee, Bong-Gu

    2012-12-01

    The laser induced forward transfer (LIFT) direct writing method is a modified LIFT method where an absorption coating layer of transparent (donor or holder) substrate is used to transform laser energy into kinetic energy in order to transfer and deposit material onto the acceptor (target). The processes use a third-harmonic generation UV-pulsed laser (355 nm) to transfer material from a metal thin film mixed photoresist coating layer (donor) to a target (acceptor) substrate. Micro-patterning is achieved by scanning the laser beam to transfer material to the acceptor substrate. In this work, we show that it is possible to build micro-structures by micro-deposition using a UV-pulsed LIFT direct writing method. Further, with improvements in accuracy and spatial resolution, we report on accurate laser direct writing micro-patterning with micro-scale resolution, and we first introduce the fundamentals of this LIFT direct writing technology. Finally, we discuss its applications in writing passive components onto various substrate materials.

  7. Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gyorgy, E.; Grigorescu, S.; Socol, G.; Mihailescu, I. N.; Janackovic, D.; Dindune, A.; Kanepe, Z.; Palcevskis, E.; Zdrentu, E. L.; Petrescu, S. M.

    2007-07-01

    Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO 2 doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF * ( λ = 248 nm, τ ≥ 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 °C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

  8. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  9. Detection of defects in laser powder deposition (LPD) components by pulsed laser transient thermography

    NASA Astrophysics Data System (ADS)

    Santospirito, S. P.; Słyk, Kamil; Luo, Bin; Łopatka, Rafał; Gilmour, Oliver; Rudlin, John

    2013-05-01

    Detection of defects in Laser Powder Deposition (LPD) produced components has been achieved by laser thermography. An automatic in-process NDT defect detection software system has been developed for the analysis of laser thermography to automatically detect, reliably measure and then sentence defects in individual beads of LPD components. A deposition path profile definition has been introduced so all laser powder deposition beads can be modeled, and the inspection system has been developed to automatically generate an optimized inspection plan in which sampling images follow the deposition track, and automatically control and communicate with robot-arms, the source laser and cameras to implement image acquisition. Algorithms were developed so that the defect sizes can be correctly evaluated and these have been confirmed using test samples. Individual inspection images can also be stitched together for a single bead, a layer of beads or multiple layers of beads so that defects can be mapped through the additive process. A mathematical model was built up to analyze and evaluate the movement of heat throughout the inspection bead. Inspection processes were developed and positional and temporal gradient algorithms have been used to measure the flaw sizes. Defect analysis is then performed to determine if the defect(s) can be further classified (crack, lack of fusion, porosity) and the sentencing engine then compares the most significant defect or group of defects against the acceptance criteria - independent of human decisions. Testing on manufactured defects from the EC funded INTRAPID project has successful detected and correctly sentenced all samples.

  10. Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

    NASA Astrophysics Data System (ADS)

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Körner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-12-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi3Fe5O12 (BIG) thin films on (100) and (111) Gd3Ga5O12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi /Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films.

  11. Development of a high magnetic field assisted pulsed laser deposition system.

    PubMed

    Zhang, Kejun; Dai, Jianming; Wu, Wenbin; Zhang, Peng; Zuo, Xuzhong; Zhou, Shu; Zhu, Xuebin; Sheng, Zhigao; Liang, Changhao; Sun, Yuping

    2015-09-01

    A high magnetic field assisted pulsed laser deposition (HMF-PLD) system has been developed to in situ grow thin films in a high magnetic field up to 10 T. In this system, a specially designed PLD cylindrical vacuum chamber is horizontally located in the bore configuration of a superconducting magnet with a bore diameter of 200 mm. To adjust the focused pulsed laser into the target in such a narrow PLD vacuum chamber, an ingeniously built-in laser leading-in chamber is employed, including a laser mirror with a reflection angle of 65° and a damage threshold up to 3.4 J/cm(2). A laser alignment system consisting of a built-in video-unit leading-in chamber and a low-energy alignment laser is applied to monitor and align the pulsed laser propagation in the PLD vacuum chamber. We have grown La0.7Sr0.3MnO3 (LSMO) thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] substrates by HMF-PLD. The results show that the nanostructures of the LSMO films can be tuned from an epitaxially continuous film structure without field to a vertically aligned nanorod structure with an applied high magnetic field above 5 T, and the dimension size of the nanorods can be tuned by the strength of the magnetic field. The associated magnetic anisotropy is found to be highly dependent on the nanorod structures. We show how the HMF-PLD provides an effective route toward tuning the nanostructures and the physical properties of functional thin films, giving it an important role in development of nanodevices and their application. PMID:26429478

  12. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

    NASA Astrophysics Data System (ADS)

    Williams, J. E.; Camata, R. P.; Fedorov, V. V.; Mirov, S. B.

    2008-05-01

    We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2 2.6 μm spectral range.

  13. Negative ions: The overlooked species in thin film growth by pulsed laser deposition

    SciTech Connect

    Esposito, M.; Bator, M.; Lippert, T.; Schneider, C. W.; Wokaun, A.; Doebeli, M.

    2011-11-07

    Plasma plume species from a ceramic La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target were studied by plasma mass spectrometry as a function of laser fluence, background gas, and deposition pressure to understand the interplay between plasma composition and oxide thin film growth by pulsed laser deposition. The plume composition reveals a significant contribution of up to 24% of negative ions, most notably using a N{sub 2}O background. The significance of negative ions for thin film growth is shown for La{sub 0.4}Ca{sub 0.6}MnO{sub 3} films grown in different background conditions where the best structural properties coincide with the largest amount of negative plasma species.

  14. Pulsed laser deposition an alternative route to the growth of magnetic thin films

    NASA Astrophysics Data System (ADS)

    Jenner, A. G.; Hayes, J. P.; Stone, L. A.; Snelling, H. V.; Greenough, R. D.

    1999-01-01

    A variety of magnetic materials that have potential for sensor and microactuator applications have been grown by pulsed laser deposition (PLD). Studies have been carried out to assess the influence of parameters such as the incident laser fluence (J cm -2) on the magnetic and magnetoelastic responses of these films. Magnetic characterisation and magnetostriction measurements were made by vibrating sample magnetometry (VSM) and capacitance dilatometry respectively. No obvious trend was shown, in all the magnetic systems studied, between fluence and magnetic properties such as magnetisation or coercivity. Room temperature in-plane magnetostrictions of ˜800 ppm have been measured from thin films (˜200 nm) of the rare earth intermetallic compound Terfenol-D (Tb 0.3Dy 0.7Fe 1.95). The potential of post production laser processing has been evaluated on the Fe-Zr alloy system and the results point to the ability to tailor the magnetic response of a film for a specific application.

  15. Observation of two distinct components during pulsed laser deposition of high T(c) superconducting films

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.; Wu, X. D.; Inam, A.; Wachtman, J. B.

    1988-04-01

    Using Rutherford backscattering technique, the angular distribution of the composition and thickness of the Y-Ba-Cu oxide film deposited by firing excimer laser (30 ns, 248 nm) pulses at a stoichiometric YBa2Cu3O(7-x) pellet was measured. The angular distribution consisted of two distinct components: one a cos theta component, a result of evaporation, and the other a highly forward directed component, a result of a secondary ejection process. The evaporated component is nonstoichiometric, as one would expect, whereas the forward-directed component has a composition close to that of the pellet. Further, the forward-directed stoichiometric component increases with the laser energy density in comparison with the evaporated component. These observations are discussed in the context of current models of laser-induced material ejection at surfaces.

  16. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rebollar, Esther; Martínez-Tong, Daniel E.; Sanz, Mikel; Oujja, Mohamed; Marco, José F.; Ezquerra, Tiberio A.; Castillejo, Marta

    2016-11-01

    We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I-V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm2 resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm2, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  17. Engineering of pulsed laser deposited calcium phosphate biomaterials in controlled atmospheres

    NASA Astrophysics Data System (ADS)

    Drukteinis, Saulius E.

    Synthetic calcium phosphates (CAP) such as hydroxyapatite (HA) have been used as regenerative bone graft materials and also as thin films to improve the integration of biomedical implant devices within skeletal tissue. Pulsed laser deposition (PLD) can deposit crystalline HA with significant adhesion on titanium biomaterials. However, there are PLD processing constraints due to the complex physical and chemical interactions occurring simultaneously during PLD, which influence ablation plume formation and development. In this investigation PLD CAP films were engineered with a focus on novel decoupling of partial pressure of H2O (g) ( PH2O ) from total background pressure, in combination with substrate heat treatment and laser energy density control. Characterization of these films was performed with X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, and Optical Profilometry. In vitro cellular adhesion testing was also performed using osteoblast (MC3T3) cell lines to evaluate adhesion of bone-forming cells on processed PLD CAP samples. Preferred a-axis orientation films were deposited in H2O (g) saturated atmospheres with reduced laser fluence (< 4 J/cm2). Crystalline HA/tetracalcium phosphate (TTCP) films were deposited in H2O ( g)-deficient atmospheres with higher laser fluence (> 3 J/cm 2). Varied PH2O resulted in control of biphasic HA/TTCP composition with increasing TTCP at lower PH2O . These were dense continuous films composed of micron-scale particles. Cellular adhesion assays did not demonstrate a significant difference between osteoblast adhesion density on HA films compared with biphasic HA/TTCP films. Room temperature PLD at varied PH2O combined with furnace heat treatment resulted in controlled variation in surface amplitude parameters including surface roughness (S a), root mean square (Sq), peak to valley height (St), and ten-point height ( Sz). These discontinuous films were

  18. The growth of nanostructured Cu2ZnSnS4 films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Che Sulaiman, Nurul Suhada; Nee, Chen Hon; Yap, Seong Ling; Lee, Yen Sian; Tou, Teck Yong; Yap, Seong Shan

    2015-11-01

    In this work, we investigated on the growth of Cu2ZnSnS4 films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu2ZnSnS4 target. Depositions were performed at laser fluence from 0.5 to 4 J cm-2. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm-2 by 355 nm laser where the absorption coefficient is >104 cm-1, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

  19. Pulsed laser deposition of NiMnGa thin films on silicon

    NASA Astrophysics Data System (ADS)

    Hakola, A.; Heczko, O.; Jaakkola, A.; Kajava, T.; Ullakko, K.

    Thin films of the magnetic shape-memory (MSM) material NiMnGa have been deposited on Si(100) substrates using pulsed laser deposition. The --200 300nm-thick films were prepared at substrate temperatures ranging from 450 °C to 650 °C and at different background Ar pressures. Large saturation magnetizations, up to 60% of the bulk value, were measured for the films. Only the films deposited in vacuum or at Ar pressures below 10-3 mbar and at temperatures between 500 °C and 600 °C were ferromagnetic. The films are mainly crystallized in the austenitic phase and they have a smooth surface with a low droplet density (0.01 μm-2). The magnetization and surface quality are sufficient that the films could be utilized in the realization of thin-film MSM devices.

  20. Frequency dependent FMR studies on pulsed laser ablated YIG films deposited on (111) GGG substrate

    NASA Astrophysics Data System (ADS)

    Bhoi, B.; Venkataramani, N.; Aiyar, R. P. R. C.; Prasad, Shiva; Kostylev, Mikhail; Stamps, R. L.

    2013-02-01

    Ferromagnetic Resonance (FMR) studies were carried out as a function of frequency on ex-situ post-annealed (Ta: 700 °C and 850 °C) YIG films. The films were deposited at TS: 750 °C on polished single crystal (111) GGG substrate using pulsed laser deposition. Both the films (Ta: 700 °C, 850 °C) shows a in-plane FMR line-width (ΔH) of 40 Oe and 50 Oe respectively which remains constant over a broad frequency range (8 GHz-20 GHz). On the other hand, a linear increment in in-plane resonance field (HR) has been observed with the increase in frequency of RF signal. The effective saturation magnetization (4πMeff) has been estimated for both the films using Kittel's equations and is found as 90% of the bulk value for the film deposited at 750 °C, annealed at 700 °C.

  1. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  2. Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

    SciTech Connect

    Wang Yunfei; Chen Xuekang; Li Zhonghua; Zheng Kuohai; Wang Lanxi; Feng Zhanzu; Yang Shengsheng

    2009-01-05

    High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

  3. Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

    2010-12-01

    Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

  4. Epitaxial growth of metal fluoride thin films by pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Budal, J.D.; Chakoumakos, B.C.; Geohegan, D.B.; Puretzky, A.

    1995-12-01

    We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.

  5. Pulsed laser deposition of hydroxyapatite on titanium substrate with titania interlayer.

    PubMed

    Rajesh, P; Muraleedharan, C V; Komath, Manoj; Varma, Harikrishna

    2011-03-01

    Pulsed laser deposition (PLD) has been used to deposit hydroxyapatite (HA) ceramic over titanium substrate with an interlayer of titania. PLD has been identified as a potential candidate for bioceramic coatings over metallic substrates to be used as orthopedic and dental implants because of better process control and preservation of phase identity of the coating component. However, direct deposition of hydroxyapatite on titanium at elevated temperature results in the formation of natural oxide layer along with some perovskites like calcium titanate at the interface. This leads to easy debonding of ceramic layer from the metal and thereby affecting the adhesion strength. In the present study, adherent and stable HA coating over Ti6Al4V was achieved with the help of an interlayer of titania. The interlayer was made to a submicron level and HA was deposited consecutively to a thickness of around one micron by exposing to laser ablation at a substrate temperature of 400°C. The deposited phase was identified to be phase pure HA by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, and inductively coupled plasma spectrometry. The mechanical behavior of coating evaluated by scratch test indicates that the adhesion strength of HA coating was improved with the presence of titania interlayer.

  6. Real-time measurement of temperature variation during nanosecond pulsed-laser-induced contamination deposition.

    PubMed

    Kokkinos, Dimitrios; Gailly, Patrick; Georges, Marc P; Tzeremes, Georgios; Rochus, Pierre; Fleury-Frenette, Karl

    2015-12-20

    In this paper, a study of heat generation during UV laser-induced contamination (LIC) and potentially resulting subsequent thermal damage are presented. This becomes increasingly interesting when optics with delicate coatings are involved. During LIC, radiation can interact with outgassing molecules, both in the gas phase and at the surface, thus triggering chemical and photo-fixation reactions. This is a major hazard, in particular for laser units operating under vacuum conditions such as in space applications. The intense photon flux not only affects the contaminant deposition rate but also alters their chemical structure, which can increase their absorption coefficient. Over cumulative irradiation shots, these molecules formed deposits that increasingly absorb photons and produce heat as a by-product of de-excitation, eventually leading to thermal damage. One could better assess the risk of the latter with the knowledge of temperature during the contamination process. For this purpose, a thermoreflectance technique is used here to estimate the temperature variation from pulse to pulse during contamination deposition through the analysis of a temperature-dependent surface reflectance signal.

  7. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

    NASA Astrophysics Data System (ADS)

    Duta, L.; Stan, G. E.; Stroescu, H.; Gartner, M.; Anastasescu, M.; Fogarassy, Zs.; Mihailescu, N.; Szekeres, A.; Bakalova, S.; Mihailescu, I. N.

    2016-06-01

    We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN "seed" layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4-2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0-5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

  8. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    SciTech Connect

    Sposito, A. Eason, R. W.; Gregory, S. A.; Groot, P. A. J. de

    2014-02-07

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi{sub 2}O{sub 3} or a CeO{sub 2} target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO{sub 2} phase.

  9. George E. Pake Prize Lecture: Pulsed Laser Deposition and the Oxide Electronics Revolution

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.

    2012-02-01

    The discovery of the Pulsed Laser Deposition (PLD) Process at Bellcore was followed by a stream of advances in the epitaxial growth of oxides and a variety of heterostructures and interfaces. Today Oxide Electronics is a fascinating field with a great deal of new Science and potential for applications. Following a discussion of these events, my talk will focus on the adventure involved in creating a new company, Neocera, and, at the same time, pushing ahead in the evolving field of oxide electronics. There, electron spin, pairing, and alignment to create superconductivity and magnetism have opened up new frontiers for research and materials development.

  10. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G. I.; Giapintzakis, J.

    2013-08-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10-3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

  11. Pulsed laser deposition of zinc nanostructures and their nonlinear optical characterizations

    NASA Astrophysics Data System (ADS)

    Golian, Y.; Motamedi, A.; Rashidian Vaziri, M. R.; Hajiesmaeilbaigi, F.

    2012-11-01

    In this work, preparation of zinc nanostructured thin films using the pulsed laser deposition (PLD) technique has been described. Optical absorption spectera of the thin films have been obtained by Spectrophotometry. Morphology and mean size of nanoparticles in the prepared nanostructured thin films were obtained by Atomic Force Microscopy. Nonlinear optical properties of the films have been investigated using the well-known Z-scan technique. Our measurements indicate positive signs for both nonlinear optical absorption coefficients and refraction indices of the nanostructured zinc thin films. The used method for measuring the optical limiting properties of the thin films and its results are also represented.

  12. Hall-Petch hardening in pulsed laser deposited nickel and copper thin films

    SciTech Connect

    Knapp, J.A.; Follstaedt, D.M.; Banks, J.C.; Myers, S.M. Jr.

    2000-01-03

    Very fine-grained Ni and Cu films were formed using pulsed laser deposition on fused silica substrates. The grain sizes in the films were characterized by electron microscopy, and the mechanical properties were determined by ultra-low load indentation, with finite-element modeling used to separate the properties of the layers from those of the substrate. Some Ni films were also examined after annealing to 350 and 450 C to enlarge the grain sizes. These preliminary results show that the observed hardnesses are consistent with a simple extension of the Hall-Petch relationship to grain sizes as small as 11 nm for Ni and 32 nm for Cu.

  13. Growth of epitaxial bismuth and gallium substituted lutetium iron garnet films by pulsed laser deposition

    SciTech Connect

    Leitenmeier, Stephan; Heinrich, Andreas; Lindner, Joerg K. N.; Stritzker, Bernd

    2006-04-15

    Epitaxial bismuth and gallium substituted lutetium iron garnet thin films have been grown on (100) oriented gadolinium gallium garnet Gd{sub 3}Ga{sub 5}O{sub 12} substrates by pulsed laser deposition. The films have been studied using x-ray diffraction, high resolution x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and electron diffraction. We obtained smooth films with thicknesses between 0.3 and 1.0 {mu}m showing good crystalline quality and epitaxial growth.

  14. Behavior of pulsed laser deposited hydroxyapatite thin films under simulated biological conditions

    NASA Astrophysics Data System (ADS)

    Grigorescu, S.; Sima, F.; Axente, E.; Feugeas, F.; Mihailescu, I. N.

    2007-03-01

    In the present paper, a study concerning the in-vitro behaviour of Hydroxyapatite films obtained by Pulsed Laser Deposition technique on titanium under different conditions was performed. The structures were immersed in Hank's Solution for 21 days in accurately controlled environment conditions. Both film and immersion solution changes were analyzed by means of XRD, SEM, EDX and X-Ray fluorescence respectively. The obtained results point to an excellent behaviour of the obtained films as bioactive structures, recommending this type of covering for further analysis in view of its use in orthopedic and dental implantology.

  15. Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

    NASA Astrophysics Data System (ADS)

    Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

    2011-11-01

    Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. <100> single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

  16. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE PAGESBeta

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributedmore » to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  17. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.

  18. Pulsed laser deposition of Mg-Al layered double hydroxide with Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Matei, A.; Birjega, R.; Vlad, A.; Luculescu, C.; Epurescu, G.; Stokker-Cheregi, F.; Dinescu, M.; Zavoianu, R.; Pavel, O. D.

    2013-03-01

    Powdered layered double hydroxides (LDHs)—also known as hydrotalcite-like (HT)—compounds have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic or organic molecules. Assembling thin films of nano-sized LDHs onto flat solid substrates is an expanding area of research, with promising applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. The exploitation of LDHs as vehicles to carry dispersed metal nanoparticles onto a substrate is a new approach to obtain composite thin films with prospects for biomedical and optical applications. We report the deposition of thin films of Ag nanoparticles embedded in a Mg-Al layered double hydroxide matrix by pulsed laser deposition (PLD). The Ag-LDH powder was prepared by co-precipitation at supersaturation and pH = 10 using aqueous solutions of Mg and Al nitrates, Na hydroxide and carbonate, and AgNO3, having atomic ratios of Mg/Al = 3 and Ag/Al = 0.55. The target to be used in laser ablation experiments was a dry pressed pellet obtained from the prepared Ag-LDH powder. Three different wavelengths of a Nd:YAG laser (266, 532 and 1064 nm) working at a repetition rate of 10 Hz were used. X-Ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and secondary ions mass spectrometry (SIMS) were used to investigate the structure, surface morphology and composition of the deposited films.

  19. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Dorcioman, G.; Simeone, D.; Gosset, D.; Behdad, S.; Boesl, B.; Craciun, V.

    2015-05-01

    Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH4 or N2 atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 1014 at/cm2 the lattice parameter and crystallites size did marginally change. However, after irradiation with a 1015 at/cm2 dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed.

  20. Pulsed laser deposition of bioactive glass films in ammonia and disilane atmospheres

    NASA Astrophysics Data System (ADS)

    Borrajo, J. P.; González, P.; Liste, S.; Serra, J.; Chiussi, S.; León, B.; Pérez-Amor, M.

    2005-07-01

    The effect of two reactive gases on the properties of bioactive glass thin films produced by pulsed laser deposition (PLD) was studied. The ablation of a bioactive silica-based glass was carried out by an ArF excimer laser ( λ = 193 nm, Φ = 4.2 J cm -2, τ = 25 ns, f = 10 Hz) at various pressures of Si 2H 6/Ar and NH 3/Ar reactive mixtures. The bonding configuration and chemical environment of the resulting coatings were followed by Fourier transform infrared spectroscopy (FT-IR). The composition and bond arrangement of bioactive glass films were tuned by varying the chamber atmosphere. The results show how to adjust film characteristics for osteointegration of implants.

  1. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  2. High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Caifeng; Li, Qingshan; Wang, Jisuo; Zhang, Lichun; Zhao, Fengzhou; Dong, Fangying

    2016-07-01

    ZnS/Au/ZnS tri-layer films were deposited on quartz glass substrates by pulsed laser deposition. The influence of Au layer thickness on optical and electrical properties of the tri-layer ZnS/Au/ZnS was studied. X-ray diffractometer (XRD) and scanning electron microscope were employed to characterize the crystalline structure and surface morphology of the tri-layer films. Hall measurements, ultraviolet and visible spectrophotometer, four-point probe were used to explore the optoelectronic properties of the ZnS/Au/ZnS. The increase of Au layer thickness resulted in the decreased resistivity, the increased carrier concentration, and the declined transmittance in the visible light region.

  3. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  4. Pulse Laser Deposition Fabricating Gold Nanoclusters on a Glassy Carbon Surface for Nonenzymatic Glucose Sensing.

    PubMed

    Shu, Honghui; Chang, Gang; Wang, Zhiqiang; Li, Pai; Zhang, Yuting; He, Yunbin

    2015-01-01

    A One-step technique for depositing gold nanoclusters (GNCs) onto the surface of a glassy carbon (GC) plate was developed by using pulse laser deposition (PLD) with appropriate process parameters. The method is simple and clean without using any templates, surfactants, or stabilizers. The experimental factors (pulse laser number and the pressure of inert gas (Ar)) that affect the morphology and structure of GNCs, and thus affect the electrocatalytic oxidation performance towards glucose were systematically investigated by means of transmission electron microscopy (TEM) and electrochemical methods (cyclic voltammograms (CV) and chronoamperometry methods). The GC electrode modified by GNCs exhibited a rapid response time (about 2 s), a broad linear range (0.1 to 20 mM), and good stability. The sensitivity was estimated to be 31.18 μA cm(-2) mM(-1) (vs. geometric area), which is higher than that of the Au bulk electrode. It has a good resistance to the common interfering species, such as ascorbic acid (AA), uric acid (UA) and 4-acetaminophen (AP). Therefore, this work has demonstrated a simple and effective sensing platform for the nonenzymatic detection of glucose, and can be used as a new material for a novel non-enzymatic glucose sensor. PMID:26165282

  5. Towards new binary compounds: Synthesis of amorphous phosphorus carbide by pulsed laser deposition

    SciTech Connect

    Hart, Judy N.; May, Paul W.; Allan, Neil L.; Hallam, Keith R.; Claeyssens, Frederik; Fuge, Gareth M.; Ruda, Michelle; Heard, Peter J.

    2013-02-15

    We have recently undertaken comprehensive computational studies predicting possible crystal structures of the as yet unknown phosphorus carbide as a function of composition. In this work, we report the synthesis of amorphous phosphorus-carbon films by pulsed laser deposition. The local bonding environments of carbon and phosphorus in the synthesised materials have been analysed by x-ray photoelectron spectroscopy; we have found strong evidence for the formation of direct P-C bonding and hence phosphorus carbide. There is a good agreement between the bonding environments found in this phosphorus carbide material and those predicted in the computational work. In particular, the local bonding environments are consistent with those found in the {beta}-InS-like structures that we predict to be low in energy for phosphorus:carbon ratios between 0.25 and 1. Highlights: Black-Right-Pointing-Pointer We have synthesised amorphous phosphorus-carbon films by pulsed laser deposition. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy results indicate formation of direct P-C bonds and hence phosphorus carbide. Black-Right-Pointing-Pointer Local bonding environments are consistent with those in predicted structures.

  6. Pulse Laser Deposition Fabricating Gold Nanoclusters on a Glassy Carbon Surface for Nonenzymatic Glucose Sensing.

    PubMed

    Shu, Honghui; Chang, Gang; Wang, Zhiqiang; Li, Pai; Zhang, Yuting; He, Yunbin

    2015-01-01

    A One-step technique for depositing gold nanoclusters (GNCs) onto the surface of a glassy carbon (GC) plate was developed by using pulse laser deposition (PLD) with appropriate process parameters. The method is simple and clean without using any templates, surfactants, or stabilizers. The experimental factors (pulse laser number and the pressure of inert gas (Ar)) that affect the morphology and structure of GNCs, and thus affect the electrocatalytic oxidation performance towards glucose were systematically investigated by means of transmission electron microscopy (TEM) and electrochemical methods (cyclic voltammograms (CV) and chronoamperometry methods). The GC electrode modified by GNCs exhibited a rapid response time (about 2 s), a broad linear range (0.1 to 20 mM), and good stability. The sensitivity was estimated to be 31.18 μA cm(-2) mM(-1) (vs. geometric area), which is higher than that of the Au bulk electrode. It has a good resistance to the common interfering species, such as ascorbic acid (AA), uric acid (UA) and 4-acetaminophen (AP). Therefore, this work has demonstrated a simple and effective sensing platform for the nonenzymatic detection of glucose, and can be used as a new material for a novel non-enzymatic glucose sensor.

  7. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    NASA Astrophysics Data System (ADS)

    Kuzanyan, A. S.; Kuzanyan, A. A.; Petrosyan, V. A.; Pilosyan, S. Kh; Grasiuk, A. Z.

    2013-12-01

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuO were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than +/-2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency.

  8. Pulsed laser deposition and characterization of conductive RuO{sub 2} thin films

    SciTech Connect

    Iembo, A.; Fuso, F.; Arimondo, E.; Ciofi, C.; Pennelli, G.; Curro, G.M.; Neri, F.; Allegrini, M. |

    1997-06-01

    RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Research Society.}

  9. Nanoforest Nb2O5 Photoanodes for Dye-Sensitized Solar Cells by Pulsed Laser Deposition

    SciTech Connect

    Ghosh, Rudresh; Brennaman, Kyle M.; Uher, Tim; Ok, Myoung-Ryul; Samulski, Edward T.; McNeil, L. E.; Meyer, Thomas J.; Lopez, Rene

    2011-10-26

    Vertically aligned bundles of Nb₂O₅ nanocrystals were fabricated by pulsed laser deposition (PLD) and tested as a photoanode material in dye-sensitized solar cells (DSSC). They were characterized using scanning and transmission electron microscopies, optical absorption spectroscopy (UV–vis), and incident-photon-to-current efficiency (IPCE) experiments. The background gas composition and the thickness of the films were varied to determine the influence of those parameters in the photoanode behavior. An optimal background pressure of oxygen during deposition was found to produce a photoanode structure that both achieves high dye loading and enhanced photoelectrochemical performance. For optimal structures, IPCE values up to 40% and APCE values around 90% were obtained with the N₃ dye and I₃{sup –}/I{sup –} couple in acetonitrile with open circuit voltage of 0.71 V and 2.41% power conversion efficiency.

  10. Effects of atomic collisions on the stoichiometry of thin films prepared by pulsed laser deposition.

    PubMed

    Packwood, Daniel M; Shiraki, Susumu; Hitosugi, Taro

    2013-07-19

    We present an analytical model to quantitatively study the effect of collisions between the atoms of a plume and the molecules of a surrounding gas on the nonstoichiometry of lithium-containing oxide thin films deposited using pulsed laser deposition. A comparison of the experimental data and the model ascertain the inevitable loss of the lighter cation, leading to a nonstoichiometric reduction in the content of lighter cations in the films. Our model is the first analytic model of collision-induced plume expansion that can explain the partial oxygen pressure dependence of the Li content of a thin film. These studies have important implications for collision effects that affect the growth of thin films containing both light and heavy elements.

  11. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  12. Vaporization and deposition of an intact polyimide precursor by resonant infrared pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2006-02-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent N-methyl pyrrolidinone (NMP). RIR-PLD transferred material showed two distinct geometries, droplets and string-like moieties. The unaltered nature of the deposited PAA was confirmed by Fourier transform infrared spectroscopy (FTIR). Thermal curing was achieved by heating for one hour on a 250°C hotplate, and the transformation to polyimide was demonstrated from changes in the FTIR spectrum following curing. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, with additional contrast shown between the various resonant frequencies used.

  13. Structural, optical, and electrical properties of pulsed laser deposition CIGSS thin films

    NASA Astrophysics Data System (ADS)

    Xu, Yan-Bin; Kang, Y. Zhen-Feng; Fan, Yue; Xiao, Ling-ling; Bo, Qing-Rui; Ding, Tie-Zhu

    2015-12-01

    High-quality CuIn0.75Ga0.25(Se0.75S0.25)2 (CIGSS) thin films were synthesized on the soda-lime glass (SLG) substrates by pulsed laser deposition. The structural and optical properties of CIGSS thin films were studied by experiments and theoretical calculations. XRD result reveals that the films are of chalcopyrite structure. The experiments and theory show that CIGSS is a semiconductor with a direct band gap. The direct band gap energy of the deposited CIGSS thin films are in the solar energy range. The band structure and density of states of the CIGSS crystals were studied by the first principles density functional theory. The experimental data and theoretical data have demonstrated good agreement.

  14. Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition

    PubMed

    Lowndes; Geohegan; Puretzky; Norton; Rouleau

    1996-08-16

    Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.

  15. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  16. The properties of gallium oxide thin film grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Feng, Qian; Li, Fuguo; Dai, Bo; Jia, Zhitai; Xie, Wenlin; Xu, Tong; Lu, Xiaoli; Tao, Xutang; Zhang, Jincheng; Hao, Yue

    2015-12-01

    Ga2O3 films were deposited on MgAl6O10(1 0 0) substrates by means of pulsed laser deposition (PLD). The influence of oxygen pressure on crystal quality, surface morphology and transmittance were investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM) and spectrophotometer. The results showed that the grain size increased, the surface roughness and FWHM of X-ray rocking curve reduced with the oxygen pressure decreasing. Furthermore, the photoluminescence spectra were recorded as a function of excitation power and temperature. A blue shift of the visible luminescence at higher excitation power was observed, indicating that donor-acceptor transitions were responsible for the visible emissions. The thermal quenching of the blue and green bands corresponded to the activation energies of 0.028 eV, 0.037 eV and 0.034 eV, respectively.

  17. Apparatus and method for pulsed laser deposition of materials on wires and pipes

    DOEpatents

    Fernandez, Felix E.

    2003-01-01

    Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

  18. Growth of Metastable β-AlN by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Yoshitake, Tsuyoshi; Mohri, Satoshi; Hara, Takeshi; Nagayama, Kunihito

    2008-05-01

    Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered AlN target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AlN.

  19. Protein Adsorption on Patterned Hydroxyapatite Thin Films Fabricated by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Kusunoki, Masanobu; Kawasima, Masami; Nishikawa, Hiroaki; Morimoto, Koichi; Hayami, Takashi; Hontsu, Shigeki; Kawai, Tomoji

    2005-02-01

    Protein adsorption on hydroxyapatite (HAP) thin film was investigated before and after patterning. Hydroxyapatite thin film 100 nm thick was deposited by pulsed laser deposition. The film was patterned by photolithography and wet etching with HCl solution. Proteins (phospholyrase b, bovine serum albumin, and others) labeled with fluorescein isothiocyanate (FITC) were used as the reagent. After the HAP film was soaked in the reagent and washed with pure water, a conspicuous contrast in FITC was observed between the HAP pattern and the glass substrate (or photoresist). This behavior showed that the biocompatibility of the HAP thin film was not influenced by the patterning process. Our technique for HAP thin film is adaptable for applications involving biosensors as electronic devices and scaffolds for tissue culture.

  20. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    SciTech Connect

    Mamun, Md Abdullah Al; Farha, Ashraf Hassan; Ufuktepe, Yüksel; Elsayed-Ali, Hani E.; Elmustafa, Abdelmageed A.

    2015-03-01

    Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbNx films with larger grain sizes.

  1. Multi-beam pulsed laser deposition: new method of making nanocomposite coatings

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Wilson, Simeon; Blackwell, Ashely; Taylor, Keylantra; Sarkisov, Sergey; Patel, Darayas; Mele, Paolo; Koplitz, Brent

    2015-08-01

    Huge number of new photonic devices, including light emitters, chemical sensors, and energy harvesters, etc. can be made of the nanocomposite coatings produced by the new multi-beam pulsed laser deposition (MB-PLD) process. We provide a short review of the conventional single-beam PLD method and explain why it is poorly suitable for making nanocomposite coatings. Then we describe the new MB-PLD process and system, particularly the multiple-beam matrix assisted pulsed laser evaporation (MB-MAPLE) version with laser beam scanning and plume direction control. The latter one is particularly designed to make organic (polymer) - inorganic functionalized nanocomposite coatings. Polymer film serves as a host for inorganic nanoparticles that add a specific functionality to the film. We analyze the properties of such coatings using the examples of poly(methyl methacrylate) (PMMA) films impregnated with the nanoparticles of rare-earth (RE) upconversion phosphors. They demonstrated the preservation of microcrystalline structure and bright upconversion emission in visible region of the phosphor nanoparticles after they were transferred in the polymer matrix during the MB-MAPLE process. The proposed technology has thus proven to serve its purpose: to make functionalized polymer nanocomposite coatings for a various potential applications.

  2. Structural and optical properties of SrCu2O2 films deposited on sapphire substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tambunan, Octolia Togibasa; Tukiman, Hadiyawarman; Parwanta, Kadek Juliana; Jeong, Da Woon; Jung, Chang Uk; Rhee, Seuk Joo; Liu, Chunli

    2012-10-01

    We deposited SrCu2O2 (SCO) films on sapphire (Al2O3) (0 0 0 1) substrates by pulsed laser deposition. The crystallographic orientation of the SCO thin film showed clear dependence on the growth temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis showed that the film deposited at 400 °C was mainly oriented in the SCO [2 0 0] direction, whereas when the growth temperature was increased to 600 °C, the SCO film showed a dominant orientation of SCO [1 1 2]. The SCO film deposited at 500 °C was obvious polycrystalline, showing multi peaks from (2 0 0), (1 1 2), and (2 1 1) diffraction in the XRD spectrum. The SCO film deposited at 600 °C showed a band gap energy of 3.3 eV and transparency up to 80% around 500 nm. The photoluminescence (PL) spectra of the SCO films grown at 500 °C and 600 °C mainly showed blue-green emission, which was attributed to the intra-band transition of the isolated Cu+ and Cu+-Cu+ pairs according to the temperature dependent-PL analysis.

  3. Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bind, Umesh Chandra; Dutta, Raj Kumar; Sekhon, Gurpreet Kaur; Yadav, Kanhaiya Lal; Krishna, J. B. M.; Menon, Ranjini; Nabhiraj, P. Y.

    2015-08-01

    Copper oxide thin film of about 260-280 nm thickness was deposited using pulsed laser deposition (PLD) on glass substrate at 350 °C and post depositional sample treatment was performed by ion implantation with 50 keV N5+ ion beam with varying particle fluence. Amorphous copper oxide thin film deposited at 80 mTorr partial pressure of oxygen was transformed to cubic Cu2O phase (20.2 nm) when implanted at 1 × 1016 particles/cm2. While mixed Cu2O and CuO phases in the thin film deposited at 100 mTorr oxygen pressure was transformed to single phase of Cu2O (23.5 nm), with enhanced crystallinity when implanted with 2.5 × 1015 particles/cm2. The phase transformation and improved crystallinity is attributed to thermal effect owing to stopping of incident ion beam. Implantation with higher particle fluence led to transformation to CuO phase with reduced crystallite sized and the increased electrical conductivity.

  4. Note: Large area deposition of Rh single and Rh/W/Cu multilayer thin films on stainless steel substrate by pulsed laser deposition technique

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika

    2014-04-15

    Mirror like thin films of single layer Rh and multilayer Rh/W/Cu are deposited on highly polished 50 mm diameter stainless steel substrate by Pulsed Laser Deposition (PLD) technique for first mirror application in fusion reactors. For this, the conventional PLD technique has been modified by incorporating substrate rastering stage for large area deposition via PLD. Process optimization to achieve uniformity of deposition as estimated from fringe visibility and thickness is also discussed.

  5. One-pot synthesis and transfer of PMMA/Ag photonic nanocomposites by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Karoutsos, V.; Koutselas, I.; Orfanou, P.; Mpatzaka, Th.; Vasileiadis, M.; Vassilakopoulou, A.; Vainos, N. A.; Perrone, A.

    2015-08-01

    Nanocomposite films comprising metallic nanoparticles in polymer matrices find increasing use in emerging photonic, electronic and microsystem applications owing to their tailored advanced functionalities. The versatile development of such films based on poly-methyl-methacrylate (PMMA) matrix having embedded Ag nanoparticles is addressed here. Two low-cost one-pot chemical methods for the synthesis of bulk target nanocomposite materials are demonstrated. These nanocomposites are subsequently transferred via pulsed laser deposition using 193 nm ArF excimer laser radiation, producing films maintaining the structural and functional properties. Both target- and laser-deposited materials have been thoroughly characterized using microscopic, spectroscopic and thermal analysis methods. Infrared spectra demonstrated the close molecular PMMA chain similarity for both target and film materials, though structural alterations identified by thermal analysis proved the enhanced characteristics of films grown. High-resolution electron microscopy proved the transfer of Ag nanoparticles sized 10-50 nm. Visible absorption peaked in the spectral range of 430-440 nm and attributed to the Ag nanocomposite plasmonic response verifying the transfer of the functional performance from target to film.

  6. Highly sensitive NO2 sensors by pulsed laser deposition on graphene

    NASA Astrophysics Data System (ADS)

    Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Kasikov, Aarne; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo

    2016-09-01

    Graphene as a single-atomic-layer material is fully exposed to environmental factors and has therefore a great potential for the creation of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized—adsorption centers of different types and with high affinity to target gases have to be created at its surface. In the present work, the modification of graphene by small amounts of laser-ablated materials is introduced for this purpose as a versatile and precise tool. The approach has been demonstrated with two very different materials chosen for pulsed laser deposition (PLD)—a metal (Ag) and a dielectric oxide (ZrO2). It was shown that the gas response and its recovery rate can be significantly enhanced by choosing the PLD target material and deposition conditions. The response to NO2 gas in air was amplified up to 40 times in the case of PLD-modified graphene, in comparison with pristine graphene, and it reached 7%-8% at 40 ppb of NO2 and 20%-30% at 1 ppm of NO2. The PLD process was conducted in a background gas (5 × 10-2 mbar oxygen or nitrogen) and resulted in the atomic areal densities of the deposited materials of about 1015 cm-2. The ultimate level of NO2 detection in air, as extrapolated from the experimental data obtained at room temperature under mild ultraviolet excitation, was below 1 ppb.

  7. Antimicrobial oligo(p-phenylene-ethynylene) film deposited by resonant infrared matrix-assisted pulsed laser evaporation.

    PubMed

    Ge, Wangyao; Yu, Qian; López, Gabriel P; Stiff-Roberts, Adrienne D

    2014-04-01

    The antimicrobial oligomer, oligo(p-phenylene-ethynylene) (OPE), was deposited as thin films by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) on solid substrates and exhibited light-induced biocidal activity. The biocidal activity of OPE thin films deposited by spin-coating and drop-casting was also investigated for comparison. Enhanced bacterial attachment and biocidal efficiency of the film deposited by RIR-MAPLE were observed and attributed to nanoscale surface topography of the thin film.

  8. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    NASA Astrophysics Data System (ADS)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  9. Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

    PubMed Central

    Shah, Kamran; Haq, Izhar Ul; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process. PMID:24592190

  10. Experimental study of direct laser deposition of Ti-6Al-4V and Inconel 718 by using pulsed parameters.

    PubMed

    Shah, Kamran; Izhar Ul Haq; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Muhammad Tahir; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

  11. Growth of monocrystalline Cu(1 1 1) films on MgO(1 1 1) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Aweke, F.; Antoni, F.; Hulik, J.; Morvan, G.; Speisser, C.; Veis, P.; Le Normand, F.

    2015-05-01

    Copper (Cu) films with a minimal thickness of 300 nm were grown on MgO(1 1 1) substrates in high vacuum by pulsed laser deposition (PLD) at various temperatures to achieve a single crystal Cu film with flat terraces without grain boundaries. We investigated the effect of the substrate temperature, the pulse repetition rate, the deposition time and the laser fluence. A temperature threshold is observed above which the growth mode is changed from a uniform flat mode to a three dimensional mode. A combined process involving a germination step at moderate temperature followed by a growth step at higher temperature yields a 450 nm almost continuous film.

  12. Utilizing pulsed laser deposition lateral inhomogeneity as a tool in combinatorial material science.

    PubMed

    Keller, David A; Ginsburg, Adam; Barad, Hannah-Noa; Shimanovich, Klimentiy; Bouhadana, Yaniv; Rosh-Hodesh, Eli; Takeuchi, Ichiro; Aviv, Hagit; Tischler, Yaakov R; Anderson, Assaf Y; Zaban, Arie

    2015-04-13

    Pulsed laser deposition (PLD) is widely used in combinatorial material science, as it enables rapid fabrication of different composite materials. Nevertheless, this method was usually limited to small substrates, since PLD deposition on large substrate areas results in severe lateral inhomogeneity. A few technical solutions for this problem have been suggested, including the use of different designs of masks, which were meant to prevent inhomogeneity in the thickness, density, and oxidation state of a layer, while only the composition is allowed to be changed. In this study, a possible way to take advantage of the large scale deposition inhomogeneity is demonstrated, choosing an iron oxide PLD-deposited library with continuous compositional spread (CCS) as a model system. An Fe₂O₃-Nb₂O₅ library was fabricated using PLD, without any mask between the targets and the substrate. The library was measured using high-throughput scanners for electrical, structural, and optical properties. A decrease in electrical resistivity that is several orders of magnitude lower than pure α-Fe₂O₃ was achieved at ∼20% Nb-O (measured at 47 and 267 °C) but only at points that are distanced from the center of the PLD plasma plume. Using hierarchical clustering analysis, we show that the PLD inhomogeneity can be used as an additional degree of freedom, helping, in this case, to achieve iron oxide with much lower resistivity. PMID:25798538

  13. Pulsed laser deposition of YBCO thin films on IBAD-YSZ substrates

    NASA Astrophysics Data System (ADS)

    Li, M.; Ma, B.; Koritala, R. E.; Fisher, B. L.; Venkataraman, K.; Balachandran, U.

    2003-01-01

    High-quality YBa2Cu3O7-x (YBCO) films were fabricated on yttria-stabilized zirconia (YSZ)-buffered Hastelloy C276 substrates by pulsed laser deposition. YSZ was grown by ion-beam-assisted deposition. A thin (approx10 nm) CeO2 layer was deposited before the deposition of YBCO. The crystalline structure and biaxial texture of the YBCO film and the buffer layer were examined by x-ray diffraction 2theta-scan, phi-scan and pole-figure analysis. Epitaxial growth of the YBCO film on the buffer layer was observed. Full width at half maximum (FWHM) value of 7.4° was measured from the phi-scan of YBCO(103). Raman spectroscopy showed compositional uniformity and phase integrity in the YBCO films. Surface morphologies of the YBCO films were examined by scanning electron microscopy. Comparative studies indicated that the CeO2 buffer layer significantly improves the structural alignment and superconducting properties of YBCO films. Tc = 90 K, with sharp transition, and transport Jc = 2.2 × 106 A cm-2 at 77 K in zero-external field were obtained on the 0.5 mum thick YBCO films. The dependence of Jc on the FWHM of the YBCO(103) phi-scan indicated that high Jc is associated with low FWHM.

  14. Correlations between microstructure and hydrophobicity properties of pulsed laser deposited diamond-like carbon films

    NASA Astrophysics Data System (ADS)

    Modabber Asl, A.; Kameli, P.; Ranjbar, M.; Salamati, H.; Jannesari, M.

    2015-05-01

    Diamond-like carbon (DLC) thin films were deposited by pulsed laser deposition (PLD) on Si-(1 0 0) substrates in the substrate temperature range of room temperature (RT) to 300 °C. The structural, hydrophobicity, mechanical, and morphological properties of the DLC films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nanoindentation, water contact angle (CA) measurement, atomic force microscopy (AFM). It was found that the DLC films deposited at RT were purely amorphous in structure with high sp3 bonding and had very smooth surfaces. Raman and XPS results indicated a structural transition from amorphous to nano-crystalline graphitic nature, structural ordering of DLC films, and decrease of the sp3 content with increasing substrate temperature. Degradation of the surface morphology and enhancement of the surface roughness with the substrate temperature were observed by AFM. It was also found that the mechanical properties such as nanohardness, elastic modulus, plastic index parameter, and elastic recovery decreased with the increasing substrate temperature. The CA measurements indicated that the hydrophobicity of DLC films increased with the substrate temperature and was sensitive not only to sp2/sp3 ratio, but also to the ordering of sp2 clusters. The observed hydrophobicity, mechanical and morphological properties were attributed to structural changes during deposition based on the sub-plantation model and stress induced mechanism.

  15. Utilizing pulsed laser deposition lateral inhomogeneity as a tool in combinatorial material science.

    PubMed

    Keller, David A; Ginsburg, Adam; Barad, Hannah-Noa; Shimanovich, Klimentiy; Bouhadana, Yaniv; Rosh-Hodesh, Eli; Takeuchi, Ichiro; Aviv, Hagit; Tischler, Yaakov R; Anderson, Assaf Y; Zaban, Arie

    2015-04-13

    Pulsed laser deposition (PLD) is widely used in combinatorial material science, as it enables rapid fabrication of different composite materials. Nevertheless, this method was usually limited to small substrates, since PLD deposition on large substrate areas results in severe lateral inhomogeneity. A few technical solutions for this problem have been suggested, including the use of different designs of masks, which were meant to prevent inhomogeneity in the thickness, density, and oxidation state of a layer, while only the composition is allowed to be changed. In this study, a possible way to take advantage of the large scale deposition inhomogeneity is demonstrated, choosing an iron oxide PLD-deposited library with continuous compositional spread (CCS) as a model system. An Fe₂O₃-Nb₂O₅ library was fabricated using PLD, without any mask between the targets and the substrate. The library was measured using high-throughput scanners for electrical, structural, and optical properties. A decrease in electrical resistivity that is several orders of magnitude lower than pure α-Fe₂O₃ was achieved at ∼20% Nb-O (measured at 47 and 267 °C) but only at points that are distanced from the center of the PLD plasma plume. Using hierarchical clustering analysis, we show that the PLD inhomogeneity can be used as an additional degree of freedom, helping, in this case, to achieve iron oxide with much lower resistivity.

  16. Growth process of nanosized aluminum thin films by pulsed laser deposition for fluorescence enhancement.

    PubMed

    Abdellaoui, N; Pillonnet, A; Berndt, J; Boulmer-Leborgne, C; Kovacevic, E; Moine, B; Penuelas, J; Pereira, A

    2015-03-20

    Pulsed laser deposition was used to deposit aluminum thin films of various thicknesses (tAl) ranging from 5 to 40 nm and to investigate their growth process when they are deposited onto SiO2 and Y2O3. Atomic force microscopy and x-ray reflectivity measurements show that the structure of the Al films are related to the wettability properties of the underlaying layer. Onto SiO2, ultra-smooth layers of aluminum are obtained, due to a perfect wetting of SiO2 by Al. In contrast when deposited onto Y2O3, percolated Al layers are observed with apparent pore size decreasing from 200 to 82 nm as t(Al) is increased from 5 to 40 nm, respectively. This particular morphology is related to partial dewetting of Al on Y2O3. These two different growth mechanisms of aluminum depend therefore on the surface properties of SiO2 and Y2O3. The plasmon resonance of such Al nanostructures in the UV region was then analyzed by studying the coupling between Eu(3+) rare earth emitters and Al. PMID:25712708

  17. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of <0001> while edge dislocations with Burgers vector of 1/3<11-20> are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD

  18. Pulsed laser deposition of hydroxyapatite on nanostructured titanium towards drug eluting implants.

    PubMed

    Rajesh P; Mohan, Nimmy; Yokogawa, Y; Varma, Harikrishna

    2013-07-01

    Titania nanotubes grown on titanium substrates by electrochemical anodization in glycerol-ammonium fluoride-water system were used to develop efficient drug carrying implants upon coating hydroxyapatite (HA) ceramic. The nanostructured surfaces achieved by anodization were caped with HA crystallites by pulsed laser deposition. The implant substrates were studied for their drug carrying capacity using gentamicin as a model. The nano-tubular surface with HA coating had better drug loading capacity of about 800 μg/cm(2) gentamicin while the bare anodized substrate carried less than 660 μg/cm(2). The HA coating alone stored as low as 68 μg/cm(2) and released the drug within the initial burst period itself. The ceramic coated anodized substrates were found to be more efficient in controlled delivery for longer than 160 h with a drug release of 0.5 μg/cm(2) even towards the end. The substrate with nanostructuring alone delivered the whole drug within 140 h. This study proposes the application of laser deposition of HA over nanostructured titanium, which proves to be promising towards controlled drug eluting bioceramic coated metallic prostheses.

  19. Pr–Fe–B+α-Fe nanocomposite film magnets prepared by pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Yamashita, Akihiro; Nakano, Masaki; Oshima, Shuichi; Yanai, Takeshi; Fukunaga, Hirotoshi

    2016-07-01

    An increase in the remanence of an isotropic film magnet is indispensable to improve the properties of miniaturized devices. We, therefore, tried to prepare Pr–Fe–B/α-Fe multilayered nanocomposite thick-film magnets by a pulsed laser deposition (PLD) method. Namely, a rotated target composed of a Pr x Fe14B (x = 2.2 or 2.4) target together with an α-Fe segment was ablated. We also took account of a small spot size of the laser beam in order to suppress the emission of droplets (large particles) from each target. An optimization on the area of the α-Fe segment in each Pr x Fe14B target was carried out, and the remanence of an annealed film reached approximately 1.1 T. Moreover, a transmission electron microscopy (TEM) observation of the above-mentioned sample revealed that the microstructure varied from a multilayered structure (as-deposited) to a dispersed one through the annealing process. Resultantly, the annealed film had a dispersed nanocomposite structure with good exchange coupling.

  20. Pulsed laser deposition of hydroxyapatite on nanostructured titanium towards drug eluting implants.

    PubMed

    Rajesh P; Mohan, Nimmy; Yokogawa, Y; Varma, Harikrishna

    2013-07-01

    Titania nanotubes grown on titanium substrates by electrochemical anodization in glycerol-ammonium fluoride-water system were used to develop efficient drug carrying implants upon coating hydroxyapatite (HA) ceramic. The nanostructured surfaces achieved by anodization were caped with HA crystallites by pulsed laser deposition. The implant substrates were studied for their drug carrying capacity using gentamicin as a model. The nano-tubular surface with HA coating had better drug loading capacity of about 800 μg/cm(2) gentamicin while the bare anodized substrate carried less than 660 μg/cm(2). The HA coating alone stored as low as 68 μg/cm(2) and released the drug within the initial burst period itself. The ceramic coated anodized substrates were found to be more efficient in controlled delivery for longer than 160 h with a drug release of 0.5 μg/cm(2) even towards the end. The substrate with nanostructuring alone delivered the whole drug within 140 h. This study proposes the application of laser deposition of HA over nanostructured titanium, which proves to be promising towards controlled drug eluting bioceramic coated metallic prostheses. PMID:23623112

  1. Pulsed-Laser Deposited Amorphous Diamond and Related Materials: Synthesis, Characterization, and Field Emission Properties

    SciTech Connect

    Baylor, L.R.; Geohegan, D.B.; Jellison, G.E., Jr.; Lowndes, D.H.; Merkulov, V.I.; Puretzky, A.A.

    1999-01-23

    Amorphous carbon films with variable sp{sup 3} content were produced by ArF (193nm) pulsed laser deposition. An in-situ ion probe was used to measure kinetic energy of C{sup +} ions. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for inter-laboratory comparisons. Electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry measurements reveal that tetrahedral amorphous carbon (ta-C) films with the most diamond-like properties are obtained at the C ion kinetic energy of {approximately}90 eV. Film properties are uniform within a 12-15{degree} angle from the plume centerline. Tapping-mode atomic force microscope measurements show that films deposited at near-optimum kinetic energy are extremely smooth, with rms roughness of only {approximately} 1 {angstrom} over distances of several hundred nm. Field emission (FE) measurements show that ta-C does not appear to be a good electron emitter. After conditioning of ta-C films deposited on n-type Si a rather high turn-on voltage of {approximately}50 V/{micro}m was required to draw current of {approximately}1 nA to the probe. The emission was unstable and typically ceased after a few minutes of operation. The FE tests of ta-C and other materials strongly suggest that surface morphology plays a dominant role in the FE process, in agreement with conventional Fowler-Nordheim theory.

  2. Pulsed-laser-deposited amorphous diamond and related materials: synthesis, characterization, and field emission properties

    NASA Astrophysics Data System (ADS)

    Merkulov, Vladimir I.; Lowndes, Douglas H.; Baylor, Larry R.; Jellison, Gerald E., Jr.; Puretzky, Alexander A.; Geohegan, David B.

    1999-07-01

    Amorphous carbon films with variable sp3 content were produced by ArF pulsed laser deposition. An in-situ ion probe was used to measure kinetic energy of C+ ions. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for inter-laboratory comparisons. Electron energy loss spectroscopy and spectroscopic ellipsometry measurement reveal that tetrahedral amorphous carbon films with the most diamond-like properties are obtained at the C ion kinetic energy of approximately 90 eV. Film properties are uniform within a 12-15 degrees angle from the plume centerline. Tapping-mode atomic force microscope measurements show that films deposited at near- optimum kinetic energy are extremely smooth, with rms roughness of only approximately 1 angstrom over distances of several hundred nm. Field emission (FE) measurements show that ta-C does not appear to be a good electron emitter. After conditioning of ta-C films deposited on n-type Si a rather high turn-on voltage of approximately 50 V/micrometers was required to draw current of approximately 1 nA to the probe. The emission was unstable and typically ceased after a few minutes of operation. The FE tests of ta-C and other materials strongly suggest that surface morphology plays a dominant role in the FE process, in agreement with conventional Fowler-Nordheim theory.

  3. Laser assisted deposition

    NASA Technical Reports Server (NTRS)

    Dutta, S.

    1983-01-01

    Applications of laser-based processing techniques to solar cell metallization are discussed. Laser-assisted thermal or photolytic maskless deposition from organometallic vapors or solutions may provide a viable alternative to photovoltaic metallization systems currently in use. High power, defocused excimer lasers may be used in conjunction with masks as an alternative to direct laser writing to provide higher throughput. Repeated pulsing with excimer lasers may eliminate the need for secondary plating techniques for metal film buildup. A comparison between the thermal and photochemical deposition processes is made.

  4. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

    SciTech Connect

    Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

    2015-09-01

    We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

  5. Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Serrao, Claudy R.; You, Long; Gadgil, Sushant; Hu, Chenming; Salahuddin, Sayeef; Diamond, Anthony M.; Hsu, Shang-Lin; Clarkson, James; Carraro, Carlo; Maboudian, Roya

    2015-02-02

    Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

  6. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  7. Hydroxyapatite thin films synthesized by Pulsed Laser Deposition onto titanium mesh implants for cranioplasty applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Stan, G. E.; Popescu, A. C.; Socol, G.; Miroiu, F. M.; Mihailescu, I. N.; Ianculescu, A.; Poeata, I.; Chiriac, A.

    2013-06-01

    We report on the synthesis of advanced nanostructured hydroxyapatite thin films onto 3D titanium (Ti) mesh substrates by Pulsed Laser Deposition method. Morphological and structural investigations as well as pull-out tests proved the stoichiometric transfer of crystalline hydroxyapatite (HA) films along with their good adherence. In vivo tests were performed on 12 patients (six with simple Ti mesh, six with Ti mesh biofunctionalized with HA). The tomodensitometry analysis of the cranial control scans evidenced the process of osseogenesis. For four patients with implanted HA/Ti mesh structures, the modification of the value obtained on Hounsfield scale was observed at the level of implant, proving the progress of osseointegration. We conclude that the structures exhibit excellent bonding strength and functionality, and are suitable for neurosurgical applications.

  8. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  9. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  10. Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications.

    PubMed

    Shen, Kun-Ching; Jiang, Ming-Chien; Liu, Hong-Ru; Hsueh, Hsu-Hung; Kao, Yu-Cheng; Horng, Ray-Hua; Wuu, Dong-Sing

    2013-11-01

    Growth of hexagonal GaN on Si(100) templates via pulsed laser deposition (PLD) was investigated for the further development of GaN-on-Si technology. The evolution of the GaN growth mechanism at various growth times was monitored by SEM and TEM, which indicated that the GaN growth mode changes gradually from island growth to layer growth as the growth time increases up to 2 hours. Moreover, the high-temperature operation (1000 °C) of the PLD meant no significant GaN meltback occurred on the GaN template surface. The completed GaN templates were subjected to MOCVD treatment to regrow a GaN layer. The results of X-ray diffraction analysis and photoluminescence measurements show not only the reliability of the GaN template, but also the promise of the PLD technique for the development of GaN-on-Si technology.

  11. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  12. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  13. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  14. Preparation of strontium hexaferrite film by pulsed laser deposition with in situ heating and post annealing

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2012-09-01

    Strontium hexaferrite (SrFe12O19) films have been fabricated by pulsed laser deposition on Si(1 0 0) substrate with Pt(1 1 1) underlayer through in situ and post annealing heat treatments. C-axis perpendicular oriented SrFe12O19 films have been confirmed by X-ray diffraction patterns for both of the in situ heated and post annealed films. The cluster-like single domain structures are recognized by magnetic force microscopy. Higher coercivity in perpendicular direction than that for the in-plane direction shows that the films have perpendicular magnetic anisotropy. High perpendicular coercivity, around 3.8 kOe, has been achieved after post annealing at 500 °C. Higher coercivity of the post annealed SrFe12O19 films was found to be related to nanosized grain of about 50-80 nm.

  15. Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2012-08-01

    The magnetic properties of strontium hexaferrite (SrFe12O19) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50-700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of Ms=298 emu/cm3 and Hc=2540 Oe.

  16. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    SciTech Connect

    Yang, Qi I.; Zhao, Jinfeng; Risbud, Subhash H.; Zhang, Li; Dolev, Merav; Fried, Alexander D.; Marshall, Ann F.; Kapitulnik, Aharon

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  17. Mechanism of critical catalyst size effect on MgO nanowire growth by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Kawai, Tomoji

    2008-07-01

    The size controllability of oxide nanowires formed via vapor-liquid-solid (VLS) mechanism is desired for the oxide nanowire-based device applications. However, the complex nature of oxide nanowire VLS growth has held back such size controllability. Here we demonstrate the critical size effect of a Au catalyst on MgO nanowire VLS growth by pulsed laser deposition. The presence of a critical catalyst size was found. Above such critical size, an oxide nanowire VLS growth is no longer feasible. Interestingly, such critical size increased with increasing growth temperature. The mechanism of the critical phenomenon is interpreted in terms of the catalyst size dependence on the amount of adatoms diffused from surroundings into the catalyst.

  18. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    SciTech Connect

    Roy Moulik, Samik; Samanta, Sudeshna; Ghosh, Barnali

    2014-06-09

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ∼27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC ∼ 50% at room temperature at lowest wavelength (λ = 360 nm) at a nominal bias voltage of 0.1 V.

  19. Formation and properties of novel artificially-layered cuprate superconductors using pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Chakoumakos, B.C.; Budai, J.D.

    1996-03-01

    Pulsed-laser deposition and epitaxial stabilization have been effectively used to engineer artificially-layered thin-film materials. Novel cuprate compounds have been synthesized using the constraint of epitaxy to stabilize (Ca,Sr)CuO{sub 2}/(Ba,Ca,Sr)CuO{sub 2} superconducting superlattices in the infinite layer structure. Superlattice chemical modulation can be observed from the x-ray diffraction patterns for structures with SrCuO{sub 2} and (Ca, Sr)CuO{sub 2} layers as thin as a single unit cell ({approximately}3. 4 {angstrom}). X-ray diffraction intensity oscillations, due to the finite thickness of the film, indicate that (Ca,Sr)CuO{sub 2} films grown by pulsed-laser deposition are extremely flat with a thickness variation of only {approximately}20 {angstrom} over a length scale of several thousand angstroms. This enables the unit-cell control of (Ca, Sr)CuO{sub 2} film growth in an oxygen pressure regime in which in situ surface analysis using electron diffraction is not possible. With the incorporation of BaCuO{sub 2} layers, superlattice structures have been synthesized which superconduct at temperatures as high as 70 K. Dc transport measurements indicate that (Ca, Sr)CuO{sub 2}/BaCuO{sub 2} superlattices are two dimensional superconductors with the superconducting transition primarily associated with the BaCuO{sub 2} layers. Superconductivity is observed only for structures with BaCuO{sub 2} layers at least two unit cells thick with {Tc} decreasing as the (Ca,Sr)CuO{sub 2} layer thickness increases. Normalized resistance in the superconducting region collapse to the Ginzburg-Landau Coulomb gas universal resistance curve consistent with the two-dimensional vortex fluctuation model.

  20. Angular Distribution of Tungsten Material and Ion Flux during Nanosecond Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Hussain, M. S.; Dogar, A. H.; Qayyum, A.; Abbasi, S. A.

    2016-01-01

    Tungsten thin films were prepared by pulsed laser deposition (PLD) technique on glass substrates placed at the angles of 0∘ to 70∘ with respect to the target surface normal. Rutherford backscattering Spectrometry (RBS) analysis of the films indicated that about 90% of tungsten material flux is distributed in a cone of 40∘ solid angle while about 54% of it lies even in a narrower cone of 10∘ solid angle. Significant diffusion of tungsten in glass substrate has been observed in the films deposited at smaller angles with respect to target surface normal. Time-of-flight (TOF) measurements performed using Langmuir probe indicated that the most probable ion energy decreases from about 600 to 91eV for variation of θ from 0∘ to 70∘. In general ion energy spread is quite large at all angles investigated here. The enhanced tungsten diffusion in glass substrate observed at smaller angles is most probably due to the higher ion energy and ion assisted recoil implantation of already deposited tungsten.

  1. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    PubMed Central

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-01-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1−xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1−xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1−xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1−xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1−xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C–320 °C) on MgO using PLD. This offers a broad scope of various applications. PMID:26548645

  2. Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

    PubMed Central

    Gondoni, Paolo; Ghidelli, Matteo; Di Fonzo, Fabio; Li Bassi, Andrea; Casari, Carlo S.

    2013-01-01

    Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (>80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4. PMID:23486076

  3. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  4. Influence of nitrogen background pressure on structure of niobium nitride films grown by pulsed laser deposition

    SciTech Connect

    Ashraf H. Farha, Ali O. Er, Yüksel Ufuktepe, Ganapati Myneni, Hani E. Elsayed-Ali

    2011-12-01

    Depositions of niobium nitride thin films on Nb using pulsed laser deposition (PLD) with different nitrogen background pressures (10.7 to 66.7 Pa) have been performed. The effect of nitrogen pressure on NbN formation in this process was examined. The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), and energy dispersive X-ray (EDX) analysis. Hexagonal {beta}-Nb{sub 2}N and cubic {delta}-NbN phases resulted when growth was performed in low nitrogen background pressures. With an increase in nitrogen pressure, NbN films grew in single hexagonal {beta}-Nb{sub 2}N phase. The formation of the hexagonal texture during the film growth was studied. The c/a ratio of the hexagonal {beta}-Nb{sub 2}N unit cell parameter increases with increasing nitrogen pressure. Furthermore, the N:Nb ratio has a strong influence on the lattice parameter of the {delta}-NbN, where the highest value was achieved for this ratio was 1.19. It was found that increasing nitrogen background pressure leads to change in the phase structure of the NbN film. With increasing nitrogen pressure, the film structure changes from hexagonal to a mixed phase and then back to a hexagonal phase.

  5. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    NASA Astrophysics Data System (ADS)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  6. Fabrication of nano-engineered transparent conducting oxides by pulsed laser deposition.

    PubMed

    Gondoni, Paolo; Ghidelli, Matteo; Di Fonzo, Fabio; Li Bassi, Andrea; Casari, Carlo S

    2013-02-27

    Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O₂ pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (>80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO₂, Al₂O₃, WO₃ and Ag₄O₄.

  7. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-05-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  8. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    PubMed

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  9. Antibacterial copper-nickel bilayers and multilayer coatings by pulsed laser deposition on titanium.

    PubMed

    Vishwakarma, Vinita; Josephine, J; George, R P; Krishnan, R; Dash, S; Kamruddin, M; Kalavathi, S; Manoharan, N; Tyagi, A K; Dayal, R K

    2009-11-01

    Biofouling, especially microfouling, is a major concern with the use of titanium (Ti) in the marine environment as a condenser material in cooling water systems. Earlier, copper-nickel (Cu/Ni) alloys were extensively used in marine environments due to their high corrosion and biofouling resistance. However, the choice of condenser material for the new fast breeder reactor in Kalpakkam is Ti to avoid steam side corrosion problems, which may pose a threat to steam generator parts having sodium as the secondary coolant. This study evaluates the surface modification of Ti using nano films of copper (Cu) and nickel (Ni) to utilize the antibacterial property of copper ions in reducing microfouling. The surface modification of Ti was carried out by the deposition of a Cu/Ni bilayer and (Cu/Ni)(10) multilayer films using a pulsed laser deposition technique. Various surface characterization studies revealed that the deposited Cu/Ni films were thin and nanocrystalline in nature. The antibacterial properties were evaluated using total viable count and epifluorescence microscopic techniques. The results showed an apparent decrease in bacterial attachment on multilayered and bilayered Cu/Ni thin films on Ti surfaces. Comparative studies between the two types of films showed a bigger reduction in numbers of microorganisms on the multilayers. PMID:20183129

  10. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

    PubMed

    Bouška, M; Pechev, S; Simon, Q; Boidin, R; Nazabal, V; Gutwirth, J; Baudet, E; Němec, P

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  11. Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

    SciTech Connect

    Uddin, Md Ahsan E-mail: gkoley@clemson.edu; Koley, Goutam E-mail: gkoley@clemson.edu; Glavin, Nicholas; Singh, Amol; Naguy, Rachel; Jespersen, Michael; Voevodin, Andrey

    2015-11-16

    Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO{sub 2} was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO{sub 2} has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO{sub 2} substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO{sub 2} (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm{sup 2}/V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 10{sup 11 }cm{sup −2} was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping.

  12. Microstructure and tribological behavior of pulsed laser deposited a-CN x films

    NASA Astrophysics Data System (ADS)

    Zheng, X. H.; Tu, J. P.; Song, R. G.

    2010-03-01

    The a-CN x films were deposited onto high-speed steel substrate by pulsed laser deposition at different nitrogen pressures. The tribological properties of the films in humid air and in vacuum were investigated using a ball-on-disk tribometer under various loads. The composition, microstructure and morphology of the films, wear tracks and paired balls were characterized by energy dispersive X-ray analysis (EDXA), X-ray photoelectron spectrum (XPS), Raman spectroscopy and scanning electron microscopy (SEM). With increasing the deposition pressure, the fraction of sp 3 C bond reduces, the fraction of trapped nitrogen increases and the friction coefficient of the films declines both in humid air and vacuum. The friction coefficient of a-CN x film decreases with increasing normal load. The tribological performances of the films in humid air are better than those of in vacuum. A transferred graphite-like tribo-layer is observed from a-CN x film to the paired ball for both environments.

  13. Super growth of vertically aligned carbon nanotubes on pulsed laser deposited catalytic thin films

    NASA Astrophysics Data System (ADS)

    Fejes, D.; Pápa, Z.; Kecsenovity, E.; Réti, B.; Toth, Z.; Hernadi, K.

    2015-03-01

    Efficient and reproducible growth of vertically aligned carbon nanotube (CNT) forests by catalytic chemical vapor deposition (CVD) requires precise setting of the properties of the catalyst thin films and CVD conditions. In this work, super growth of vertically aligned CNTs onto Al2O3 support and Fe-Co catalyst layer system is presented. The layers were grown by pulsed laser deposition (PLD) onto silicon wafer pieces. Their thickness and optical properties were controlled by spectroscopic ellipsometry. The effect of heat treatment at 750 °C in nitrogen and in hydrogen of these PLD layers was compared. High-resolution electron microscopic images showed that treatment of catalyst layers in H2 resulted in finer and denser catalytic particles. As a result, well-aligned, dense and few-walled CNT forests with 1-1.5 mm height were deposited by water-vapor-assisted CVD on the hydrogen-treated films, while without hydrogen treatment defected CNT structures were grown. According to these observations, Raman spectroscopy showed a higher degree of crystallinity in case of CNT-s, where reduction by hydrogen influenced the oxidation state of the metallic catalytic particles in a beneficial way.

  14. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m‑1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  15. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  16. Collisional effects of background gases on pulsed laser deposition plasma beams

    SciTech Connect

    Geohegan, D.B.; Puretzky, A.A.

    1995-04-01

    The penetration of energetic pulsed ablation plumes through ambient gases is experimentally characterized to investigate a general phenomenon believed to be important to film growth by pulsed laser deposition (PLD). Under typical PLD conditions involving background gases, the ion flux in the ablation plume is observed to split into distinct fast and slow components over a limited range of distances. The fast component is transmitted with near-initial velocities and high kinetic energies, potentially damaging to growing films at these distances. Formation of the second, significantly-slowed component correlates with the bright contact front formation observed in fast ICCD imaging studies. This general effect is explored in detail for the case of yttrium ablation into argon, a single-element target into an inert gas. Time-resolved optical absorption spectroscopy and optical emission spectroscopy are employed to simultaneously view the populations of both excited and ground states of Y and Y{sup +} for comparison with quantitative intensified-CCD photography of the visible plume luminescence and ion flux measurements made with fast ion probes during this phenomenon. These measurements confirm that, in addition to the bright significantly-slowed front which has been described by shock or drag propagation models, a fast-component of target material is transmitted to extended distances for some ambient pressures with near-initial velocities.

  17. Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition

    SciTech Connect

    Friedmann, T.A.; McCarty, K.F.; Klaus, E.J.; Boehme, D.; Clift, W.M.; Johnsen, H.A.; Mills, M.J.; Ottesen, D.K. )

    1992-11-16

    We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN(hBN) targets to form BN films. We have deposited BN films on heated (600 {degree}C) and room-temperature silicon (100) surface in an ambient background gas of N{sub 2}. Fourier transform infrared (FTIR) reflection spectroscopy indicates that the films grown at high temperature have short-range {ital sp}{sup 2} (hexagonal-like) order, whereas films grown at room temperature are a mixture of {ital sp}{sup 3}-bonded BN and {ital sp}{sup 2}-bonded BN. Electron diffraction confirms the presence of cubic BN (cBN) material in the films grown at low temperature and the corresponding TEM lattice images show a grain size of {similar to}200 A. The presence of cBN in the films correlates with laser energy density, with cubic material appearing around 2.4 mJ/cm{sup 2}. Auger electron spectroscopy (AES) indicates that the films are nitrogen deficient.

  18. Raman spectroscopy of organic dyes adsorbed on pulsed laser deposited silver thin films

    NASA Astrophysics Data System (ADS)

    Fazio, E.; Neri, F.; Valenti, A.; Ossi, P. M.; Trusso, S.; Ponterio, R. C.

    2013-08-01

    The results of a surface-enhanced Raman scattering (SERS) study performed on representative organic and inorganic dyes adsorbed on silver nanostructured thin films are presented and discussed. Silver thin films were deposited on glass slides by focusing the beam from a KrF excimer laser (wavelength 248 nm, pulse duration 25 ns) on a silver target and performing the deposition in a controlled Ar atmosphere. Clear Raman spectra were acquired for dyes such as carmine lake, garanza lake and brazilwood overcoming their fluorescence and weak Raman scattering drawbacks. UV-visible absorption spectroscopy measurements were not able to discriminate among the different chromophores usually referred as carmine lake (carminic, kermesic and laccaic acid), as brazilwood (brazilin and brazilein) and as garanza lake (alizarin and purpurin). SERS measurements showed that the analyzed samples are composed of a mixture of different chromophores: brazilin and brazilein in brazilwood, kermesic and carminic acid in carmine lake, alizarin and purpurin in garanza lake. Detection at concentration level as low as 10-7 M in aqueous solutions was achieved. Higher Raman intensities were observed using the excitation line of 632.8 nm wavelength with respect to the 785 nm, probably due to a pre-resonant effect with the molecular electronic transitions of the dyes.

  19. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  20. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    DOE PAGESBeta

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, Michael D.

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can bemore » utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.« less

  1. Transmission of reactive pulsed laser deposited VO2 films in the THz domain

    NASA Astrophysics Data System (ADS)

    Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed

    2016-08-01

    This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO2) films in the terahertz (THz) frequency range, namely the transition temperature TIMT, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O2 pressure (PO2) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO2 films obtained at low PO2 exhibit low TIMT, large ΔA, and narrow ΔH. Increasing PO2 results in VO2 films with higher TIMT, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

  2. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, Michael D.

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  3. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    NASA Astrophysics Data System (ADS)

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-01

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Srn+1TinO3n+1 Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  4. Effect of heat treatment on pulsed laser deposited amorphous calcium phosphate coatings.

    PubMed

    García, F; Arias, J L; Mayor, B; Pou, J; Rehman, I; Knowles, J; Best, S; León, B; Pérez-Amor, M; Bonfield, W

    1998-01-01

    Amorphous calcium phosphate coatings were produced by pulsed laser deposition from targets of nonstoichiometric hydroxyapatite (Ca/P = 1.70) at a low substrate temperature of 300 degrees C. They were heated in air at different temperatures: 300, 450, 525 and 650 degrees C. Chemical and structural analyses of these coatings were performed using X-ray diffraction (XRD), FTIR, and SEM, XRD analysis of the as-deposited and heated coatings revealed that their crystallinity improved as heat treatment temperature increased. The main phase was apatitic, with some beta-tricalcium phosphate in the coatings heated at 525 and 600 degrees C. In the apatitic phase there was some carbonate substitution for phosphate and hydroxyl ions at 450 degrees C and almost solely for phosphate at 525 and 600 degrees C as identified by FTIR. This was accompanied by a higher hydroxyl content at 525 and 600 degrees C. At 450 degrees C a texture on the coating surface was observable by SEM that was attributable to a calcium hydroxide and calcite formation by XRD. These phases almost disappeared at 600 degrees C, probably due to a transformation into calcium oxide.

  5. Biocompatible Mn2+-doped carbonated hydroxyapatite thin films grown by pulsed laser deposition.

    PubMed

    György, E; Toricelli, P; Socol, G; Iliescu, M; Mayer, I; Mihailescu, I N; Bigi, A; Werckman, J

    2004-11-01

    Mn(2+)-doped carbonated hydroxyapatite (Mn-CHA) thin films were obtained by pulsed laser deposition on Ti substrates. The results of the performed complementary diagnostic techniques, X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy investigations indicate that the films are crystalline with a Ca/P ratio of about 1.64-1.66. The optimum conditions, when nearly stoichiometric crystalline thin films were deposited, were found to be 10 Pa oxygen pressure, 400 degrees C substrate temperature, and postdeposition heat treatment in water vapors at the same substrate temperature. The films were seeded with L929 fibroblast and hFOB1.19 osteoblast cells and subjected to in vitro tests. Both fibroblast and osteoblast cells have a good adherence on the Mn-CHA film and on the Ti or polystyrene references. Proliferation and viability tests showed that osteoblast cells growth on Mn-CHA-coated Ti was enhanced as compared to uncoated pure Ti surfaces. Caspase-1 activity was not affected significantly by the material, showing that Mn-CHA does not induce apoptosis of cultured cells. These results demonstrate that Mn-CHA films on Ti should provoke a faster osteointegration of the coated implants as compared to pure Ti. (c) 2004 Wiley Periodicals, Inc. J Biomed Mater Res 71A: 353-358, 2004.

  6. Growth of calcium phosphate thin films by in situ assisted ultraviolet pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Craciun, V.; Iliescu, M.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Werckmann, J.

    2003-03-01

    Calcium phosphate (CaP) thin films including hydroxyapatite were intensively studied in order to optimize the technology of the bone prostheses manufacturing. A drawback in the CaP films processing is the poor mechanical characteristics, especially hardness, tensile strength and adherence to the metallic substrate. We report a new method for the growth of high quality CaP films with substantial improvement of the mechanical properties: pulsed laser deposition (PLD) assisted by in situ ultraviolet (UV) radiation emitted by a low pressure Hg lamp. The depositions were made on Si and Ti-5Al-2.5Fe alloys in very low ambient oxygen at pressures of 10 -2 to 10 -1 Pa with the substrates maintained at 500-600 °C temperature. The films were analyzed by electron microscopy, white light confocal microscopy (WLCM), grazing incidence X-ray diffraction and Berkovich nanoindentation. The films were crystalline and exhibited remarkable mechanical characteristics with values of hardness and Young modulus of 6-8 and 150-170 GPa, respectively, which are uncommonly high for the CaP ceramics. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, while the tensile strength between the film's grains and the bonding strength at the CaP film-substrate interface were increased.

  7. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-30

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  8. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    SciTech Connect

    Kuzanyan, A S; Kuzanyan, A A; Petrosyan, V A; Pilosyan, S Kh; Grasiuk, A Z

    2013-12-31

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuO were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than ±2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency. (laser deposition of thin films)

  9. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    SciTech Connect

    Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

  10. In-situ plume diagnosis during pulsed laser deposition of epitaxial-oxide thin films

    SciTech Connect

    Fenner, D.B.; Kung, P.J.; Goeres, J.; Li, Q.

    1996-12-31

    The visible plume, induced during pulsed-laser deposition (PLD) of epitaxial La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7}/YSZ heterostructures on silicon (100) wafers, was studied by optical-emission spectroscopy (OES). These films are suitable for the fabrication of ferroelectric capacitors and pyroelectric-sensor devices. A YAG laser, at 266 nm, is used for ablation. A collection lens transfers the PLD-plume emission into an optical fiber and onto a diffraction grating and a CCD array, for time-averaged spectroscopy from 410 to 640 nm. Plume emissions from ablated targets in the presence of an oxygen ambient, due to various atomic (Ba, Co, Cu, Sr, Ti, Y, Zr), ionic (Ba{sup +}, La{sup +}, Sr{sup +}, Y{sup +}), and a diatomic oxide (YO) species were identified. Emission intensity and evolution of ablated species are reported for distance away from the target surface, oxygen pressures, and laser fluences (1 to 4 J/cm{sup 2}). The behavior of reactive-product species, especially YO for plumes from yttria-stabilized zirconia (YSZ) and YBCO targets, is discussed. This simple and inexpensive OES system is suitable for use as a plume-quality monitor on routine PLD film synthesis.

  11. Effects of experimental conditions on the morphologies, structures and growth modes of pulsed laser-deposited CdS nanoneedles

    PubMed Central

    2014-01-01

    CdS nanoneedles with different morphologies, structures, and growth modes have been grown on Ni-coated Si(100) surface under different experimental conditions by pulsed laser deposition method. The effects of catalyst layer, substrate temperature, and laser pulse energy on the growth of the CdS nanoneedles were studied in detail. It was confirmed that the formation of the molten catalyst spheres is the key to the nucleation of the CdS nanoneedles by observing the morphologies of the Ni catalyst thin films annealed at different substrate temperatures. Both the substrate temperature and laser pulse energy strongly affected the growth modes of the CdS nanoneedles. The secondary growth of the smaller nanoneedles on the top of the main nanoneedles was found at appropriate conditions. A group of more completed pictures of the growth modes of the CdS nanoneedles were presented. PMID:24559455

  12. The importance of the energetic species in pulsed laser deposition for nanostructuring.

    PubMed

    Castelo, A; Afonso, C N; Pesce, E; Piscopiello, E

    2012-03-16

    This work reports on the optical and structural properties of nanostructured films formed by Ag nano-objects embedded in amorphous aluminium oxide (a-Al(2)O(3)) prepared by alternate pulsed laser deposition (PLD). The aim is to understand the importance of the energetic species involved in the PLD process for nanostructuring, i.e. for organizing nanoparticles (NPs) in layers or for self-assembling them into nanocolumns (NCls), all oriented perpendicular to the substrate. In order to change the kinetic energy of the species arriving at the substrate, we use a background gas during the deposition of the embedding a-Al(2)O(3) host. It was produced either in vacuum or in a gas pressure (helium and argon) while the metal NPs were always produced in vacuum. The formation of NPs or NCls is easily identified through the features of the surface plasmon resonances (SPR) in the extinction spectra and confirmed by electron microscopy. The results show that both the layer organization and self-assembling of the metal are prevented when the host is produced in a gas pressure. This result is discussed in terms of the deceleration of species arriving at the substrate in gas that reduces the metal sputtering by host species (by ≈58%) as well as the density of the host material (by ≥19%). These reductions promote the formation of large voids along which the metal easily diffuses, thus preventing organization and self-organisation, as well as an enhancement of the amount of metal that is deposited.

  13. Comparison of Island Formation Between Pulsed Laser Deposition and Molecular Beam Epitaxy:. a Kinetic Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Tan, X.; Zhou, Y. C.; Zheng, X. J.

    Based on a hexagonal lattice which includes deposition, dissociation, and diffusion, we performed a kinetic Monte Carlo model to explore thin film growth via pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) within the submonolayer regime. First and second nearest-neighbor interactions calculated by the Morse potential are taken into account in this case. These simulations show that thin film deposition by PLD is markedly different from that by MBE. With PLD, as pulse duration decreases, the island density increases and the island size decreases. Similarly, at temperature T = 550 K, the scaling function for MBE is rather similar to that of the analytical prediction for a critical island size of i = 2, while the scaling function for PLD changes from an i = 1 behavior to an i = 0 behavior with the decrease in pulse duration.

  14. Surface structure of tetrahedral-coordinated amorphous diamond-like carbon films grown by pulsed laser deposition

    SciTech Connect

    Mercer, T.W.; DiNardo, N.J. |; Martinez-Miranda, L.J.; Fang, F.; Friedmann, T.A.; Sullivan, J.P.; Siegal, M.P.

    1994-12-31

    The structure and composition of tetrahedral-coordinated amorphous diamond-like carbon films (a-tC) grown by pulsed laser deposition (PLD) of graphite has been studied with atomic force microscopy (AFM). The nanometer-scale surface structure has been studied as a function of growth parameters (e.g., laser energy density and film thickness) using contact-mode and tapping-mode AFM. Although the surfaces were found to be generally smooth, they exhibited reproducible structural features on several size scales which correlate with the variation of laser energy and th excited ion etching.

  15. Antimicrobial oligo(p-phenylene-ethynylene) film deposited by resonant infrared matrix-assisted pulsed laser evaporation.

    PubMed

    Ge, Wangyao; Yu, Qian; López, Gabriel P; Stiff-Roberts, Adrienne D

    2014-04-01

    The antimicrobial oligomer, oligo(p-phenylene-ethynylene) (OPE), was deposited as thin films by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) on solid substrates and exhibited light-induced biocidal activity. The biocidal activity of OPE thin films deposited by spin-coating and drop-casting was also investigated for comparison. Enhanced bacterial attachment and biocidal efficiency of the film deposited by RIR-MAPLE were observed and attributed to nanoscale surface topography of the thin film. PMID:24581926

  16. An experimental investigation of inhomogeneities in resonant infrared matrix-assisted pulsed-laser deposited thin polymer films

    NASA Astrophysics Data System (ADS)

    Bubb, Daniel M.; Corgan, Jeff; Yi, Sunyong; Khan, Mishae; Hughes, Leon; Gurudas, Ullas; Papantonakis, Michael; McGill, R. Andrew

    2010-08-01

    Thin polymer films are deposited using matrix-assisted pulsed-laser evaporation and subsequently are characterized by scanning electron and atomic force microscopies. An Er : YAG laser (2937 nm, 350 μs) is used as a light source and the effect of the energy density supplied by the laser on the morphology of the deposited films is investigated. It is found that the appearance of undesirable non-uniform morphological features arises from either poor solubility of the guest molecules or insufficient energy density provided by the laser to vaporize the entire ejected volume. In addition, the surface roughness of two guest-host systems is found to depend linearly on the polymer concentration. These results allow us to better understand earlier work in the field and to establish a framework by which MAPLE films may be improved.

  17. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    NASA Astrophysics Data System (ADS)

    Ehsani, M. H.; Mehrabad, M. Jalali; Kameli, P.

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films.

  18. Micro- and nano-testing of calcium phosphate coatings produced by pulsed laser deposition.

    PubMed

    Arias, J L; Mayor, M B; Pou, J; Leng, Y; León, B; Pérez-Amor, M

    2003-09-01

    Micro- and nano-testing methods have been explored to study the thin calcium phosphate coatings with high adhesive strength. The pulsed laser deposition (PLD) technique was utilised to produce calcium phosphate coatings on metal substrates, because this type of coatings exhibit much higher adhesive strength with substrates than conventional plasma-sprayed coatings. Due to the limitations of the conventional techniques to evaluate the mechanical properties of these thin coatings (1 microm thick), micro-scratch testing has been applied to evaluate the coating-to-substrate adhesion, and nano-indentation to determine the coating hardness and elastic modulus. The test results showed that the PLD produced amorphous and crystalline HA coatings are more ductile than titanium substrates, and the PLD coatings are not delaminated from the substrates by scratch. Also, the results showed that the crystalline HA coating is superior in internal cohesion to the amorphous one, even though the lower elastic modulus of amorphous coating could be more mechanically compatible with natural bone. PMID:12809768

  19. Manifestation of unusual size effects in granular thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sergeenkov, S.; Cichetto, L.; Diaz, J. C. C. A.; Bastos, W. B.; Longo, E.; Araújo-Moreira, F. M.

    2016-11-01

    We demonstrate manifestation of some rather unusual size effects in granular thin films prepared by a pulsed laser deposition technique. We observed that the temperature dependence of resistivity ρ(T) notably depends on the relation between the grain size Rg and the film thickness d. Namely, more granular LaNiO3 thin films (with small values of Rg) grown on LaAlO3 substrate are found to follow a universal ρ(T) ∝T 3 / 2 law for all the measured temperatures. While less granular thin films (with larger values of Rg), exhibit a more complicated behavior accompanied by a clear-cut crossover (around Tcr = 200 K), from ρ(T) ∝T 3 / 2 (for 20 K < T < 200 K) to ρ(T) ∝ T (for 200 K < T < 300 K). The obtained results are attributed to manifestation of the finite temperature size effects (when an average grain size Rg becomes comparable with the thermal de Broglie wavelength Λ) leading to the crossover temperature Tcr ∝(d /Rg) 2 .

  20. Phase control of Mn-based spinel films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; Bedzyk, Michael J.; Fenter, Paul

    2016-07-01

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). This capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.

  1. Nitrogen doping and structural properties of amorphous carbon films deposited by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Rusop, M.; Mominuzzaman, S. M.; Tian, X. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2002-09-01

    Nitrogen (N) was successfully introduced into amorphous carbon (a-C) films by ablating carbon (C) from a camphoric carbon (CC) target with varying ambient N partial pressure (NPP) using pulsed laser ablation (PLA). We found that the N content in the film changed on varying the NPP. The room temperature conductivity ( σRT) decreases initially at 0.1 mTorr and then increases at higher NPP up to 30 mTorr and decreases thereafter. We can relate this variation to doping of N in the films for low N content as the optical gap ( Eg) remains unchanged till the film is deposited at 1 mTorr. Scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy studies also suggest that no graphitization whatsoever occurs in the film after N addition up to 1 mTorr. Although no structural change in the films was found with N addition up to 1 mTorr, the σRT depends on the N content. With higher NPP up to 30 mTorr, since Eg decreases with increasing σRT, we related this phenomenon to the graphitization. However, above 30 mTorr, since Eg increases with the decrease of σRT, we related this phenomenon to the structural change in the film.

  2. Reinforced Pulsed Laser-Deposited Hydroxyapatite Coating on 316 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Bajpai, Shubhra; Gupta, Ankur; Pradhan, Siddhartha Kumar; Mandal, Tapendu; Balani, Kantesh

    2014-10-01

    Hydroxyapatite (HA) is a widely used bioceramic known for its chemical similarity with that of bone and teeth (Ca/P ratio of 1.67). But, owing to its extreme brittleness, α-Al2O3 is reinforced with HA and processed as a coating via pulsed laser deposition (PLD). Reinforcement of α-Al2O3 (50 wt.%) in HA via PLD on 316L steel substrate has shown modulus increase by 4% and hardness increase by 78%, and an improved adhesion strength of 14.2 N (improvement by 118%). Micro-scratching has shown an increase in the coefficient-of-friction from 0.05 (pure HA) to 0.17 (with 50 wt.% Al2O3) with enhancement in the crack propagation resistance (CPR) up to 4.5 times. Strong adherence of PLD HA-Al2O3 coatings (~4.5 times than that of HA coating) is attributed to efficient release of stored tensile strain energy (~17 × 10-3 J/m2) in HA-Al2O3 composites, making it a potential damage-tolerant bone-replacement surface coating.

  3. Advanced functional oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Millon, E.

    2013-08-01

    Pulsed-laser deposition is now a largely used growth method to prepare functional and multifunctional oxide films for application in microelectronics, spintronics, optics, materials for energy… The functional properties of such oxide films are strongly depending on the crystalline structure, and on the chemical composition through the local environment of cationic species surrounded by oxygen. While large oxygen deficiency cannot be obtained by classical growth method or in bulk state, oxide films with a high content of oxygen vacancies may be obtained by PLD. For oxide systems presenting possible stable sub-oxides, the formation of oxygen vacancies is linked to a decrease of the cationic valence state. A complete reduction can be observed leading to particular electronic properties: the case of TiOx (1.5 < x < 2) will be therefore presented and discussed. When no thermodynamically stable sub-oxides can be involved, the large oxygen deficiency may lead to the formation of nanocomposite films constituted by a metallic phase embedded in a stoichiometric oxide matrix. This phase separation induced by the control of oxygen pressure during the growth is in particular evidenced on Ga2Ox (2.1 < x < 3) films and their related physical (electrical and optical) properties are discussed.

  4. Plasma interactions determine the composition in pulsed laser deposited thin films

    SciTech Connect

    Chen, Jikun; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas; Döbeli, Max

    2014-09-15

    Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La{sub 0.6}Sr{sub 0.4}MnO{sub 3}, we demonstrate for as grown La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} films that a congruent transfer of metallic species is achieved in two pressure windows: ∼10{sup −3} mbar and ∼2 × 10{sup −1} mbar. In the intermediate pressure range, La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

  5. One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Loh, Tamie A. J.; Chua, Daniel H. C.; Wee, Andrew T. S.

    2015-12-01

    Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect-to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its structural analogue MoS2. Here we report the direct fabrication of highly crystalline few-layer WS2 on silver substrates by pulse laser deposition at the relatively low temperature of 450 °C. The growth takes places by conventional epitaxy, through the in-situ formation of nearly lattice-matching Ag2S on the silver surface. Intriguingly, it was observed that the resulting film was composed of not only the usual semiconducting 2H-WS2 structure but also the less common metallic 1T-WS2. Modifications of the synthesis parameters allow for control over the crystalline quality, film thickness and crystal phase composition of the resulting WS2 film.

  6. Features of the film-growth conditions by cross-beam pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Tselev, A.; Gorbunov, A.; Pompe, W.

    Spatial and energetic characteristics of the plasma plume by cross-beam pulsed-laser deposition (CBPLD) were investigated. Effective droplets filtering together with high efficiency of material usage are observed by this approach. Time-of-flight (TOF) technique with electrostatic ion collectors (Langmuir probes operating in the ion-collecting mode) were applied to obtain kinetic energy distribution functions of ionized particles and to compare the ionization degrees of the plasma by the CBPLD and by the conventional PLD. The average and maximum kinetic energies of the ions by the CBPLD are found to be 2-3 times lower as compared to the conventional PLD. At the same time, the fraction of ionized species and highly exited neutrals (Rydberg atoms) in the CBPLD plasma is 1.5-2 times larger in comparison to the conventional approach. Re-sputtering of the material of the growing film by fast ions is a considerable effect in both the PLD methods by the chosen experimental conditions. The angular width of the directional pattern of the plasma plume by CBPLD is comparable to that typical for the conventional PLD.

  7. Electrical characterization of Si doped AlN films synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Simeonov, Simeon; Bakalova, Silvia; Szekeres, Anna; Minkov, Ivaylo; Socol, Gabriel; Ristoscu, Carmen; Mihailescu, Ion

    2015-04-01

    The electrical properties of thin AlN films doped with Si (AlN:Si) have been investigated. The films were synthesized on Si substrates at 800 °C by pulsed laser deposition in low-pressure nitrogen ambient. The AlN:Si films exhibit non-ohmic I-V characteristics and the current through these films is controlled by space charge limited current. The C-V dependence of metal-insulator-silicon (MIS) structures with AlN:Si films exhibits an excess capacitance around zero bias voltage. This excess capacitance indicates the presence of deep acceptor levels situated at the boundaries of adjacent grains in the AlN:Si films. The Si donor density in the AlN:Si films, estimated from the 1 MHz C-V characteristics, is of the order of 1018 cm-3. The impedance measurements of these AlN:Si structures at different test voltage frequencies reveal that the charge transport mechanism is dominated by either thermally-activated hopping or electron tunneling from occupied to nearest unoccupied deep levels.

  8. Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

    SciTech Connect

    Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

    2014-07-21

    Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

  9. One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition

    PubMed Central

    Loh, Tamie A. J.; Chua, Daniel H. C.; Wee, Andrew T. S.

    2015-01-01

    Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect-to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its structural analogue MoS2. Here we report the direct fabrication of highly crystalline few-layer WS2 on silver substrates by pulse laser deposition at the relatively low temperature of 450 °C. The growth takes places by conventional epitaxy, through the in-situ formation of nearly lattice-matching Ag2S on the silver surface. Intriguingly, it was observed that the resulting film was composed of not only the usual semiconducting 2H-WS2 structure but also the less common metallic 1T-WS2. Modifications of the synthesis parameters allow for control over the crystalline quality, film thickness and crystal phase composition of the resulting WS2 film. PMID:26657172

  10. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  11. Pulsed laser deposition of rare-earth-doped glasses: a step toward lightwave circuits

    NASA Astrophysics Data System (ADS)

    Morea, R.; Fernandez, J.; Balda, R.; Gonzalo, J.

    2016-02-01

    Pulsed Laser Deposition (PLD) is used to produce Er-doped lead-niobium germanate (PbO-Nb2O5-GeO2) and fluorotellurite (TeO2-ZnO-ZnF2) thin film glasses. Films having high refractive index, low absorption and large transmission are obtained in a narrow processing window that depends on the actual PLD configuration (O2 pressure ˜a few Pa, Laser energy density ˜2-3 J cm-2 for the results presented in this work). However, Er-doped thin film glasses synthetized at room temperature using these experimental parameters show poor photoluminescence (PL) performance due to non-radiative decay channels, such as a large OH- concentration. Thermal annealing allows improving PL intensity and lifetime (τPL), the latter becoming close to that of the parent Er-doped bulk glass. In addition, the use of alternate PLD from host glass and rare-earth targets allows the synthesis of nanostructured thin film glasses with a controlled rare-earth concentration and in-depth distribution, as it is illustrated for Er-doped PbO-Nb2O5-GeO2 film glasses. In this case, PL intensity at 1.53 μm increases with the spacing between Er-doped layers to reach a maximum for a separation between Er-doped layers >= 5 nm, while τPL is close to the bulk value independently of the spacing. Finally, the comparison of these results with those obtained for films grown by standard PLD from Er-doped glass targets suggests that nanostructuration allows reducing rare-earth clustering and concentration quenching effects.

  12. Nucleation and growth of cubic boron nitride films produced by ion-assisted pulsed laser deposition

    SciTech Connect

    Friedmann, T.A.; Medlin, D.L.; Mirkarimi, P.B.; McCarty, K.F.; Klaus, E.J.; Boehme, D.R.; Johnsen, H.A.; Mills, M.J.; Ottesen, D.K.

    1993-12-31

    We are studying the boron nitride system using a pulsed excimer laser to ablate from hexagonal BN (cBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25--800C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N{sub 2} source gases to produce BN films with a high percentage of sp{sup 3}-bonded cBN. In order to optimize growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp{sup 3}-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30--40 mn. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm{sup {minus}1} and the position decreases with growth time to a constant value of 1085 cm{sup {minus}1}. Since in bulk cBN this IR mode appears at 1065 cm{sup {minus}1}, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

  13. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  14. Structural and Electrical Properties of Heteroepitaxial Magnetic Oxide Junction Diode Fabricated by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Wong, K. H.

    2010-11-01

    Heteroepitaxial junctions formed by p-type strontium doped lanthanum manganite and n-type cobalt doped titanium dioxide were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. The La0.7Sr0.3MnO3 (LSMO) layers were grown at 650° C and under 150 mTorr ambient oxygen pressure. They showed room temperature ferromagnetism and metallic-like electrical conduction with a resistivity of 0.015 ohm cm at 300 K. The CoxTi1-xO2[x = 0.05 and 0.1] (CTO), which, at anatase phase, was reported as a wide-band-gap dilute magnetic semiconductor, was deposited on the LSMO film surface at 600° C with an ambient oxygen pressure of 20 mTorr. The as-grown CTO films exhibited pure anatase crystalline phase and semiconductor-like conduction. Under optimized fabrication conditions the CTO/LSMO junction revealed a heteroepitaxial relationship of (004)CTO‖‖(001)LSMO‖‖(001)LAO. Electrical characterization of these p-n junctions yielded excellent rectifying characteristics with a current rectifying ratio over 1000 at room temperature. The electrical transport across these diodes was dominated by diffusion current at low current (low bias voltage) regime and by recombination current at high current (high bias voltage) regime. Our results have demonstrated an all-oxide spintronic junction diode with good transport property. The simultaneous of electrical and magnetic modulation in a diode junction is therefore potentially realizable.

  15. Highly textured fresnoite thin films synthesized in situ by pulsed laser deposition with CO2 laser direct heating

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; de Pablos-Martin, Araceli; Patzig, Christian; Stölzel, Marko; Brachwitz, Kerstin; Hochmuth, Holger; Grundmann, Marius; Höche, Thomas

    2014-01-01

    Fresnoite Ba2TiSi2O8 (BTS) thin films were grown and crystallized in situ using pulsed laser deposition (PLD) with CO2 laser direct heating of the a-plane sapphire (1 1 0) substrates up to 1250 °C. Starting with 775 °C growth temperature, (0 0 1)- and (1 1 0)-textured BTS and BaTiO3 phases, respectively, could be assigned in the films, and the typical fern-like BTS crystallization patterns appear. For higher process temperatures of 1100 to 1250 °C, atomically smooth, terraced surface of the films was found, accompanied by crystalline high-temperature phases of Ba-Ti-Si oxides. HAADF micrographs taken in both scanning transmission electron microscopy and energy-dispersive x-ray spectrometry mode show details of morphology and elemental distribution inside the films and at the interface. To balance the inherent Si deficiency of the BTS films, growth from glassy BTS × 2 SiO2 and BTS × 2.5 SiO2 targets was considered as well. The latter targets are ideal for PLD since the employed glasses possess 100% of the theoretical density and are homogeneous at the atomic scale.

  16. Graphene-deposited microfiber photonic device for ultrahigh-repetition rate pulse generation in a fiber laser.

    PubMed

    Qi, You-Li; Liu, Hao; Cui, Hu; Huang, Yu-Qi; Ning, Qiu-Yi; Liu, Meng; Luo, Zhi-Chao; Luo, Ai-Ping; Xu, Wen-Cheng

    2015-07-13

    We report on the generation of a high-repetition-rate pulse in a fiber laser using a graphene-deposited microfiber photonic device (GMPD) and a Fabry-Perot filter. Taking advantage of the unique nonlinear optical properties of the GMPD, dissipative four-wave mixing effect (DFWM) could be induced at low pump power. Based on DFWM mode-locking mechanism, the fiber laser delivers a 100 GHz repetition rate pulse train. The results indicate that the small sized GMPD offers an alternative candidate of highly nonlinear optical component to achieve high-repetition rate pulses, and also opens up possibilities for the investigation of other abundant nonlinear effects or related fields of photonics. PMID:26191834

  17. Electrical Properties of the Pulsed-Laser Deposited Surface-Barrier Structures Based on p-Si

    NASA Astrophysics Data System (ADS)

    Avjyan, K.; Khachatryan, A.; Matevosyan, L.; Vardanyan, G.; Panosyan, Zh.; Yengibaryan, Ye.

    Surface-barrier structures based on p-Si where fabricated by pulsed-laser deposition method. Electrical properties (current-voltage and capacitance-voltage) of these structures were studied. It is shown, that the forward current ((+) on p-Si) varies as a J=J0exp(eU/nkT) and surface-barrier structures based on high-resistivity p-Si are light-sensitive.

  18. Rietveld X-ray diffraction analysis of nanostructured rutile films of titania prepared by pulsed laser deposition

    SciTech Connect

    Murugesan, S.; Kuppusami, P.; Mohandas, E.

    2010-01-15

    Rietveld powder X-ray diffraction analysis of the rutile films of titanium oxide prepared by pulsed laser deposition was carried out. The crystallite size increased with increase of substrate temperature, while the strain showed a reverse trend. The films synthesized at temperature {>=}573 K showed that the crystal structure was almost close to that of bulk rutile structure. The influence of the substrate temperature on the lattice parameters and oxygen coordinates were also studied in the present work.

  19. Self-organized single crystal mixed magnetite/cobalt ferrite films grown by infrared pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    de la Figuera, Juan; Quesada, Adrián; Martín-García, Laura; Sanz, Mikel; Oujja, Mohamed; Rebollar, Esther; Castillejo, Marta; Prieto, Pilar; Muñoz-Martín, Ángel; Aballe, Lucía; Marco, José F.

    2015-12-01

    We have grown mixed magnetite/cobalt ferrite epitaxial films on SrTiO3 by infrared pulsed-laser deposition. Diffraction experiments indicate epitaxial growth with a relaxed lattice spacing. The films are flat with two distinct island types: nanometric rectangular mounds in two perpendicular orientations, and larger square islands, attributed to the two main components of the film as determined by Mössbauer spectroscopy. The origin of the segregation is suggested to be the oxygen-deficiency during growth.

  20. Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

    NASA Astrophysics Data System (ADS)

    Jadhav, H.; Singh, A. K.; Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D. C.; Miotello, A.; Sinha, S.

    2016-11-01

    Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min-1 g-1 of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3-5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

  1. Radical modification of the wetting behavior of textiles coated with ZnO thin films and nanoparticles when changing the ambient pressure in the pulsed laser deposition process

    NASA Astrophysics Data System (ADS)

    Popescu, A. C.; Duta, L.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Pasuk, I.; Zgura, I.; Beica, T.; Enculescu, I.; Ianculescu, A.; Dumitrescu, I.

    2011-09-01

    Cotton/polyester woven fabrics were functionalized with ZnO thin films or nanoparticles by pulsed laser deposition, using a KrF* excimer laser source. Depending on the number of applied laser pulses, well-separated nanoparticles (for 10 pulses) or compact thin films (for 100 pulses) were deposited. The synthesized nanostructures were evaluated morphologically by scanning electron microscopy and atomic force microscopy, physico-chemically by x-ray diffraction and functionally by the contact angle method. By modifying the ambient gas nature and pressure in the deposition chamber, hydrophilic or hydrophobic surfaces were obtained. When using an oxygen flux, both the deposited thin films and nanoparticles were hydrophilic. After deposition in vacuum, the nanoparticles were hydrophobic, but the thin films were super-hydrophobic. This radical modification of wetting behavior was assigned to the differences in microstructure features and surface electrical charging in the two cases.

  2. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    SciTech Connect

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-08-01

    Thin films of Cu2Sb, prepared on stainless steel and copper substrates with a pulsed laser deposition technique at room temperature, have been evaluated as electrodes in lithium cells. The electrodes operate by a lithium insertion/copper extrusion reaction mechanism, the reversibility of which is superior when copper substrates are used, particularly when electrochemical cycling is restricted to the voltage range 0.65-1.4 V vs. Li/Li+. The superior performance of Cu2Sb films on copper is attributed to the more active participation of the extruded copper in the functioning of the electrode. The continual and extensive extrusion of copper on cycling the cells leads to the isolation of Li3Sb particles and a consequent formation of Sb. Improved cycling stability of both types of electrodes was obtained when cells were cycled between 0.65 and 1.4 V. A low-capacity lithium-ion cell with Cu2Sb and LiNi0.8Co0.15Al0.05O2 electrodes, laminated from powders, shows excellent cycling stability over the voltage range 3.15 - 2.2 V, the potential difference corresponding to approximately 0.65-1.4 V for the Cu2Sb electrode vs. Li/Li+. Chemical self-discharge of lithiated Cu2Sb electrodes by reaction with the electrolyte was severe when cells were allowed to relax on open circuit after reaching a lower voltage limit of 0.1 V. The solid electrolyte interphase (SEI) layer formed on Cu2Sb electrodes after cells had been cycled between 1.4 and 0.65 V vs. Li/Li+ was characterized by Fourier-transform infrared spectroscopy; the SEI layer contributes to the large irreversible capacity loss on the initial cycle of these cells. The data contribute to a better understanding of the electrochemical behavior of intermetallic electrodes in rechargeable lithium batteries.

  3. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  4. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-01

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets. PMID:22772213

  5. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-01

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

  6. Pulsed-laser-deposited TiO2 nanocrystalline films supporting Au nanoparticles for visible-light-operating plasmonic photocatalysts

    NASA Astrophysics Data System (ADS)

    Yoshida, Takehito; Watanabe, Tei; Kikuchi, Fumito; Tabuchi, Takeru; Umezu, Ikurou; Haraguchi, Masanobu

    2016-05-01

    We have synthesized pulsed-laser-deposited (PLD) TiO2 nanocrystalline films supporting Au nanoparticles. Au films were deposited on the PLD TiO2 nanocrystalline films with the mass thickness of 4 nm. The as-deposited Au films had island structures. After furnace annealing at 300 °C for 180 min in air, the as-deposited island-structured Au films were balled with the mean diameter of 19 nm on the PLD TiO2 nanocrystalline films. We confirmed that the balled Au nanoparticles had the localized surface plasmonic resonance absorption band in the range of 510-600 nm. Photocatalytic activities of the Au-supporting TiO2 nanocrystalline films were evaluated by a methylene blue decomposition method. We clarified that the Au-supporting TiO2 nanocrystalline films demonstrated visible-light-driven photocatalytic activities, under the filtered (490-500 nm) Xe arc lamp irradiation.

  7. Ion-assisted deposition of MoSx films from laser-generated plume under pulsed electric field

    NASA Astrophysics Data System (ADS)

    Fominski, V. Yu.; Nevolin, V. N.; Romanov, R. I.; Smurov, I.

    2001-01-01

    The thickness profiles and compositional distributions of MoSx films deposited from a plume generated by pulsed laser irradiation of the MoS2 target were investigated at a varying fluence and constant laser pulse energy. It was shown that films with stoichiometric composition were formed at sufficiently low fluence (near the ionization threshold), and increasing fluence caused intricate nonmonotonic variations of the compositional distribution. A substantial deviation of the film composition from stoichiometric and a significant radial gradient of the sulfur concentration over the substrate surface (1laser-generated plume. When the laser fluence was low, films of stoichiometric composition were bombarded by energetic particles with a low intensity, and the number of displacements was inadequate for formation of the basal-oriented structure (≪1 displacement per atom). Raising the laser fluence, it is possible to increase the bombardment dose; however, the effect of the factors (1)-(3) has turned the selection of optimal conditions for stoichiometric film deposition into a rather complicated problem. A new technique is proposed for pulsed laser deposition of high-purity MoSx films with varying sulfur concentration and the required ion-irradiation dose. The technique consists in accelerating the ion component of the plume by a pulsed electric field up to an energy of a few tens of kilo-electron-volts, thus making it possible to significantly increase the number of displaced atoms in the MoSx film without noticeable change in its composition and to induce ion mixing at the MoSx-substrate interface. The positive voltage pulse

  8. Effect of laser fluence on electrical properties of (Sr0.75,La0.25)TiO3 thin films grown by pulsed-laser-deposition.

    PubMed

    Eom, Kitae; Kim, Taemin; Seo, Jiwon; Choi, Jaedu; Lee, Jaichan

    2014-11-01

    We have grown Sr0.75La0.25TiO3 (SLTO) thin films using pulsed laser deposition (PLD) with various laser energy fluences. We investigated the effect of energy fluence on the compositions of SLTO films. The stoichiometry of SLTO films was controlled by adjusting the laser energy density. At low energy densities below 1.0 J/cm2, SLTO films become non-stoichiometric with Ti deficiency. The Ti deficiency increases with decreasing the laser energy fluence. We have also investigated the effect of laser energy fluence on the electrical properties of the thin films. The electrical resistivity and carrier density intimately depend on the laser energy fluence as a result of the non-stoichiometry. After eliminating the effect of oxygen vacancies by post-annealing, the electrical properties are dependent on the cation stoichiometry in the oxide films.

  9. Moderation of near-field pressure over a supersonic flight model using laser-pulse energy deposition

    NASA Astrophysics Data System (ADS)

    Furukawa, D.; Aoki, Y.; Iwakawa, A.; Sasoh, A.

    2016-05-01

    The impact of a thermal bubble produced by energy deposition on the near-field pressure over a Mach 1.7 free-flight model was experimentally investigated using an aeroballistic range. A laser pulse from a transversely excited atmospheric (TEA) CO2 laser was sent into a test chamber with 68 kPa ambient pressure, focused 10 mm below the flight path of a conically nosed cylinder with a diameter of 10 mm. The pressure history, which was measured 150 mm below the flight path along the acoustic ray past the bubble, exhibited precursory pressure rise and round-off peak pressure, thereby demonstrating the proof-of-concept of sonic boom alleviation using energy deposition.

  10. Growth of poly-crystalline Cu films on Y substrates by picosecond pulsed laser deposition for photocathode applications

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Klini, A.; Manousaki, A.; Perrone, A.; Fotakis, C.

    2015-11-01

    In this work, the deposition of Cu thin films on Y substrates for photocathode applications by pulsed laser deposition employing picosecond laser pulses is reported and compared with the use of nanosecond pulses. The influence of power density (6-50 GW/cm2) on the ablation of the target material, as well as on the properties of the resulting film, is discussed. The material transfer from the target to the substrate surface was found to be rather efficient, in comparison to nanosecond ablation, leading to the growth of films with high thickness. Scanning electron microscope analysis indicated a quasi-continuous film morphology, at low power density values, becoming granular with increasing power density. The structural investigation, through X-ray diffraction, revealed the poly-crystalline nature of the films, with a preferential growth along the (111) crystallographic orientation of Cu cubic network. Finally, energy-dispersive X-ray spectroscopy showed a low contamination level of the grown films, demonstrating the potential of a PLD technique for the fabrication of Cu/Y patterned structures, with applications in radiofrequency electron gun technology.

  11. Optical properties of ZnO thin films grown on diamond-like carbon by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Li, Shao-lan; Zhang, Li-chun; Dong, Yan-feng; Zhao, Feng-zhou

    2012-11-01

    ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD), and the room-temperature photoluminescence (PL) is investigated. Using a fluorescence spectrophotometer, we obtain the PL spectra of DLC/Si and ZnO/Si thin films deposited at different substrate temperatures. The ZnO/DLC thin films show a broadband emission almost containing the entire visible spectrum. The Gaussian fitting curves of PL spectra reveal that the visible emission of ZnO/DLC thin films consists of three peaks centered at 381 nm, 526 nm and 682 nm, which are attributed to the radiative recombination of ZnO and DLC, respectively. The Commission International de l'Eclairage (CIE) 1931 ( x, y) chromaticity space of ZnO/DLC thin films indicates that the visible PL spectrum is very close to the standard white-light region.

  12. Structural and electrochemical properties of W-Se-O layers prepared by pulsed laser pre-deposition and thermal posttreatment

    NASA Astrophysics Data System (ADS)

    Soloviev, A. A.; Grigoriev, S. N.; Fominski, D. V.; Volosova, M. A.; Romanov, R. I.

    2016-09-01

    Novel nanostructured thin-film coatings containing WSe2 and WO3 nanosheets were prepared through a simple and highly reproducible method. Pulsed laser pre-deposition of W- Se-O films on a microcrystalline graphite substrate by ablation of WSe2 target in a mixture of Ar and O2 gases was followed by thermal post-treatment. The influence of pre-deposition and post-treatment conditions on the structure, morphology and chemical composition of the W-Se- O films was studied. Thermal annealing at appropriate conditions of pre-deposited amorphous W-Se-O films resulted in the formation of crystalline structure consisted of nanocrystals of WSe2 and WO3 phases. Such structural modification significantly altered the electrochemical properties of the thin-film coatings with consequences, in particular, on their catalytic activity toward hydrogen evolution reaction in an acid solution.

  13. Pulsed laser-deposited MoS₂ thin films on W and Si: field emission and photoresponse studies.

    PubMed

    Late, Dattatray J; Shaikh, Parvez A; Khare, Ruchita; Kashid, Ranjit V; Chaudhary, Minakshi; More, Mahendra A; Ogale, Satishchandra B

    2014-09-24

    We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices. PMID:25141299

  14. Pulsed laser-deposited MoS₂ thin films on W and Si: field emission and photoresponse studies.

    PubMed

    Late, Dattatray J; Shaikh, Parvez A; Khare, Ruchita; Kashid, Ranjit V; Chaudhary, Minakshi; More, Mahendra A; Ogale, Satishchandra B

    2014-09-24

    We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

  15. Development of lead-free piezoelectric thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Abazari Torghabeh, Maryam

    As a high performance piezoelectric material widely used in sensors, actuators and other electronic devices, lead zirconate titanate (PZT) ceramics have been the center of attention for many years. However, the toxicity of these materials and their exposure to the environment during processing steps, such as calcination, sintering, machining as well as problems in recycling and disposal have been major concerns regarding their usage all around the globe for the past couple of decades. Consequently, utilizing lead-based materials for many commercial applications have been recently restricted in Europe and Asia and measures are being taken in United States as well. Therefore, there is an urgent need for lead-free piezoelectrics whose properties are comparable to those of well-known PZT materials. Recently, the discovery of ultra-high piezoelectric activity in the ternary lead-free KNaNbO3-LiTaO 3-LiSbO3 (KNN-LT-LS) and (Bi,Na)TiO3-(Bi,K)TiO 3-BaTiO3 (BNT-BKT-BT) systems have given hope for alternatives to PZT. Furthermore, the demand for new generation of environment-friendly functional devices, utilizing piezoelectric materials, inspired a new surge in lead-free piezoelectric thin film research. In this study, an attempt has been made to explore the development of lead-free piezoelectric thin films by Pulsed Laser Deposition (PLD) on SrTiO 3 substrate. While the growth and development process of KNN-LT-LS thin films was the primary goal of this thesis, a preliminary effort was also made to fabricate and characterize BNT-BKT-BT thin films. In a comprehensive and systematic process optimization study in conjunction with X-ray diffractometry, the phase evolution, stoichiometry, and growth orientation of the films are monitored as a function of deposition conditions including temperature and ambient oxygen partial pressure. Processing parameters such as substrate temperature and pressure are shown to be highly dominant in determining the phase and composition of the

  16. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  17. Humidity sensors applicative characteristics of granularized and porous Bi2O3 thin films prepared by oxygen plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tudorache, Florin; Petrila, Iulian; Condurache-Bota, Simona; Constantinescu, Catalin; Praisler, Mirela

    2015-01-01

    Pulsed laser ablation of pure bismuth targets in a plasma discharge followed by thermal treatment as preparation method for humidity high-sensitive bismuth trioxide thin films deposited onto Si/Pt substrates were analyzed. Several thin films were deposited at different substrate temperatures during the pulsed laser deposition namely between 300 °C and 600 °C. Near to the electrical investigation, the structure and the morphology of the films as keys features for water adsorption are thoroughly investigated and correlated with their sensitivity as humidity sensors. Thus, it has been found that strong granularized Bi2O3 thin films obtained through oxygen plasma-assisted pulsed laser deposition onto Si/Pt substrate at 500 °C provide the most interesting humidity sensing characteristics.

  18. Q-switched operation of a pulsed-laser-deposited Yb:Y(2)O(3) waveguide using graphene as a saturable absorber.

    PubMed

    Choudhary, Amol; Dhingra, Shonali; D'Urso, Brian; Parsonage, Tina L; Sloyan, Katherine A; Eason, Robert W; Shepherd, David P

    2014-08-01

    The first, to the best of our knowledge, Q-switched operation of a pulsed-laser-deposited waveguide laser is presented. A clad Yb:Y(2)O(3) waveguide was Q-switched using an output coupling mirror coated with a single layer of graphene deposited by atmospheric pressure chemical vapor deposition. During continuous-wave operation, a maximum power of 83 mW at a slope efficiency of 25% was obtained. During Q-switched operation, pulses as short as 98 ns were obtained at a repetition rate of 1.04 MHz and a central wavelength of 1030.8 nm.

  19. Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

    SciTech Connect

    Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh

    2015-05-01

    We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

  20. Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric properties

    NASA Astrophysics Data System (ADS)

    Orlianges, Jean-Christophe; Crunteanu, Aurelian; Pothier, Arnaud; Merle-Mejean, Therese; Blondy, Pierre; Champeaux, Corinne

    2012-12-01

    Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO2 allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.

  1. Large third-order optical nonlinearities in iron oxide thin films synthesized by reactive pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mulenko, S. A.; Rudenko, V. I.; Liakhovetskyi, V. R.; Brodin, A. M.; Stefan, N.

    2016-10-01

    We report on a study of the third-order nonlinear optical properties of Fe2O3 thin films, grown by the method of laser deposition on silica (SiO2) substrates. The films were synthesized on substrates at different temperatures (293 K and 800 K) and under different oxygen pressures (0.1 Pa, 0.5 Pa, 1.0 Pa). The resulting films were amorphous, if grown on cold substrates (293 K), or polycrystalline otherwise. The third-order optical susceptibility χ(3) of the films was determined by the Z-scan method at the wavelengths of 1064 nm and 532 nm and the laser pulse width of 20 ns. Remarkably high χ(3) values on the order of 10-4 esu at 1064 nm are obtained. The results show that Fe2O3 thin films are promising nonlinear materials for contemporary optoelectronics.

  2. Investigation of the nonlocal nonlinear optical response of copper nanostructured thin films prepared by pulsed laser deposition

    SciTech Connect

    Farmanfarmaei, B; RashidianVaziri, M R; Hajiesmaeilbaigi, F

    2014-11-30

    Nanostructured copper thin films have been prepared using the pulsed laser deposition method. Optical absorption spectra of these films exhibit plasmonic absorption peaks around 619 nm, which suggests the formation of copper nanoparticles on their surfaces. Scanning electron micrographs of the films confirm the nanoparticle formation on the films surfaces. After laser beam passing through the thin films, the observed diffraction rings on a far-field screen have been recorded. Despite the smallness of the maximal axial phase shifts of the films, which have been obtained using the nonlocal z-scan theory, a series of low-intensity rings can be observed on the far field screen for some specific positions of the thin films from the focal point. It is shown that the best approach to determining the sign and magnitude of the nonlinear refractive index of thin samples is the application of the conventional closeaperture z-scan method. (nanostructures)

  3. Spatially-offset double-pulse laser-induced breakdown spectroscopy: A novel technique for analysis of thin deposited layers

    NASA Astrophysics Data System (ADS)

    Nishijima, D.; Hollmann, E. M.; Doerner, R. P.

    2016-10-01

    A novel technique, spatially-offset double-pulse laser-induced breakdown spectroscopy (SODP-LIBS), is invented for analysis of thin layers. In this technique, two laser spots are spatially offset by a few mm, while there is no spatial gap for the standard collinear DP-LIBS. It is demonstrated from analysis of thin W layers (∼30-250 nm thickness) deposited on Mo substrates at a reduced ambient pressure of ∼ 5 × 10-3 Torr that (1) the W I signal intensity is enhanced with SODP-LIBS and (2) a clearer transition between W and Mo is obtained with SODP-LIBS, compared to the standard DP-LIBS.

  4. Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

    Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

  5. Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Vladimir L.; Vai, Alex T.; Al-Mamouri, Malek; Stuart Abell, J.; Pepper, Michael; Edwards, Peter P.

    2015-12-01

    Highly conducting (ρ = 3.9 × 10-4 Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO)1-x(SiO2)x (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

  6. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Zheng, Xuejun; Zhong, Xiangli; Deng, Shuifeng

    2012-10-01

    ZnO thin films (ZTFs) are deposited on Si (1 1 1) substrates by a pulsed laser deposition (PLD) method and characterized by x-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The ethanol sensing properties of ZTFs are investigated by exposing them to different concentrations of gaseous ethanol at various temperatures. At an operating temperature of 120 °C, the ZTFs have a high response value to 5 ppm gaseous ethanol, and the detection limit can be as low as 0.1 ppm. The corresponding response and recovery times are 20 and 15 s, respectively. The results indicate that ZTFs synthesized by PLD have potential applications for fabricating high performance ethanol sensors.

  7. Characterization of perovskite film prepared by pulsed laser deposition on ferritic stainless steel using microscopic and optical methods

    NASA Astrophysics Data System (ADS)

    Durda, E.; Jaglarz, J.; Kąc, S.; Przybylski, K.; El Kouari, Y.

    2016-06-01

    The perovskite La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF48) film was deposited on Crofer 22 APU ferritic stainless steel by pulsed laser deposition (PLD). Morphological studies of the sample were performed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Information about film thickness and surface topography of the film and the steel substrate were obtained using following optical methods: spectroscopic ellipsometry (SE), bidirectional reflection distribution function (BRDF) and total integrated reflectometry (TIS). In particular, the BRDF study, being complementary to atomic force microscopy, yielded information about surface topography. Using the previously mentioned methods, the following statistic surface parameters were determined: root-mean square (rms) roughness and autocorrelation length by determining the power spectral density (PSD) function of surface irregularities.

  8. Nondestructive Encapsulation of CdSe/CdS Quantum Dots in an Inorganic Matrix by Pulsed Laser Deposition.

    PubMed

    Aubret, Antoine; Houel, Julien; Pereira, Antonio; Baronnier, Justine; Lhuillier, Emmanuel; Dubertret, Benoit; Dujardin, Christophe; Kulzer, Florian; Pillonnet, Anne

    2016-08-31

    We report the successful encapsulation of colloidal quantum dots in an inorganic matrix by pulsed laser deposition. Our technique is nondestructive and thus permits the incorporation of CdSe/CdS core/shell colloidal quantum dots in an amorphous yttrium oxide matrix (Y2O3) under full preservation of the advantageous optical properties of the nanocrystals. We find that controlling the kinetic energy of the matrix precursors by means of the oxygen pressure in the deposition chamber facilitates the survival of the encapsulated species, whose well-conserved optical properties such as emission intensity, luminescence spectrum, fluorescence lifetime, and efficiency as single-photon emitters we document in detail. Our method can be extended to different types of nanoemitters (e.g., nanorods, dots-in-rods, nanoplatelets) as well as to other matrices (oxides, semiconductors, metals), opening up new vistas for the realization of fully inorganic multilayered active devices based on colloidal nano-objects. PMID:27503143

  9. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  10. Annealing effects on the structural and electrical properties of pulsed laser deposited BaPbO3 thin films

    NASA Astrophysics Data System (ADS)

    Satish, B.; Jayaraj, M. K.

    2014-01-01

    Conductive pervoskite BaPbO3 (BPO) films as potential electrodes for ferroelectric / tuneable applications were prepared by pulsed laser deposition technique at 600°C and at 0.1 mbar oxygen partial pressure on fused silica substrates. The structural and electrical properties of the films showed a dependence on annealing temperatures and the high oxygen ambient. XRD and standard four probe method with Hall setup were employed to investigate the dependence of growth conditions on crystal structure, resistivity and the carrier concentration on annealing the BPO thin films. The surface topography was analysed by AFM. The unannealed as deposited films showed the least resistivity of 1.6 × 10-2 ohm cm and a bandgap of 4.1eV.

  11. Rapid deposition of biaxially-textured CeO 2 buffer layers on polycrystalline nickel alloy for superconducting tapes by ion assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Xiong, Xuming; Winkler, Dag

    2000-07-01

    The long deposition time of sharply textured buffer layer was the main obstacle for the ion beam assisted deposition (IBAD) process to go to large scale fabrication of superconducting tapes. This paper shows that this obstacle can be overcome. (002)-oriented, sharply-textured CeO 2 buffer layers with (111) phi-scan full width of half maximum (FWHM) of 10° were deposited by ion beam assisted pulsed laser deposition (PLD) on polycrystalline Hastelloy C in 10 min. The deposition rate was about 3 nm/s. CeO 2 film surface was smooth and free of cracks compared with film by inclined substrate deposition (ISD). The IBAD was carried out at small ion-to-atom ratio values, which resulted in CeO 2 (200) plane aligned along the incident plane of the ion beam. The Jc of Y 1Ba 2Cu 3O 7- δ (YBCO) film deposited on the buffer layer was 7.3×10 5 A/cm 2.

  12. Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Zhu, Pei-ran; S, Yamamoto; A, Miyashita; H, Naramoto

    1998-12-01

    Thin films of VO2 single-crystalline on (0001) sapphire substrates have been prepared by visible pulsed laser ablation technique. The crystal quality and properties of the films are evaluated through electrical resistance measurement, x-ray diffraction (XRD), and Rutherford-backscattering spectroscopy/channeling (RBS/C) analysis. The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7 × 103-2 × 104. The hysteresis widths are from less than 1 to 3 K. XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO2 with the (010) planes parallel to the surface of the sapphire substrate.

  13. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region

    NASA Astrophysics Data System (ADS)

    Fang, Xu; Mak, C. L.; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  1021 cm‑3 with the lowest corresponding resistivity of 2.41  ×  10‑4 Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  14. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region.

    PubMed

    Fang, Xu; Mak, C L; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range. PMID:27054885

  15. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region

    NASA Astrophysics Data System (ADS)

    Fang, Xu; Mak, C. L.; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  1021 cm-3 with the lowest corresponding resistivity of 2.41  ×  10-4 Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  16. In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

    NASA Technical Reports Server (NTRS)

    Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

    2004-01-01

    The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

  17. Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Virt, I. S.; Rudyi, I. O.; Lopatynskyi, I. Ye.; Dubov, Yu.; Tur, Y.; Lusakowska, E.; Luka, G.

    2016-09-01

    Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

  18. Industrially scaled pulsed laser deposition based coating techniques for the realization of hemocompatible surfaces for blood contact applications

    NASA Astrophysics Data System (ADS)

    Lackner, Juergen M.; Waldhauser, Wolfgang; Major, Roman; Major, Boguslaw; Czarnowska, Elzbieta; Bruckert, Franz

    2008-05-01

    Non-thrombogenic blood contacting surfaces and appropriate blood flow characteristics are essential for clinical application. State-of-the-art coatings are based on heparin and struggle with the problem of bleeding. Thus, there is increasing demand for developing new coating materials for improved human body acceptance. Materials deposited by vacuum coating techniques would be an excellent alternative if the coating temperatures can be kept low due to the applied substrate materials of low temperature resistance (mostly polymers). Under these circumstances, adequate film structure and high adhesion can be reached by the Pulsed Laser Deposition at room temperature (RT-PLD), which was developed to an industrial-scaled process at Laser Center Leoben. This process was applied to deposit Ti, TiN, TiCN and diamond-like carbon (DLC) on polyurethane, titanium and silicon substrates to study the biological interactions to blood cells and the kinetic mechanism of eukaryote cell attachment. Besides high biological acceptance, distinct differences for the critical delamination shear stress were found for the coatings, indicating higher adhesion at higher carbon contents.

  19. Epitaxial Growth of Atomically Flat Yttrium Iron Garnet Thin Films on Gadolinium Gallium Garnet by Pulse Laser Deposition

    NASA Astrophysics Data System (ADS)

    Lin, Tao; Tang, Chi; Shi, Jing

    2013-03-01

    Yttrium iron garnet (YIG) is a ferrimagnetic insulator which is useful for magneto-optical, microwave, and more recently spintronic devices. Pulsed laser deposition (PLD) has emerged as a preferred technique to deposit complex oxide thin films, heterostructures, and superlattices with high quality. Deposition of YIG films using PLD has been reported by several groups. The layer-by-layer growth mode has been achieved with a high laser repetition rate. No details about surface morphology were discussed. Here we report our approach to grow YIG films with thickness ranging from 10 to 100 nm on (110)- and (111)-oriented gadolinium gallium garnet (GGG) substrates. In both orientations, we have successfully grown epitaxial YIG thin films confirmed by the patterns of the reflection high-energy electron diffraction. The magnetic properties are measured by a vibrating sample magnetometer. The in-plane easy-axis coercivity is less than 1 Oe, while the perpendicular saturation field is ~ 2000 Oe. For both orientations, the atomic force microscopy images show that the YIG surface is extremely flat with roughness ~ 0.6Å. Flat terraces are found with the atomic step height in films with both orientations. This work paves the way to engineering anisotropy of the thin films for YIG-based magnetic devices. This work was supported in part by DMEA and DOE.

  20. Mechanical properties improvement of pulsed laser-deposited hydroxyapatite thin films by high energy ion-beam implantation

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Pelletier, H.; Müller, D.; Broll, N.; Mille, P.; Ristoscu, C.; Mihailescu, I. N.

    2002-01-01

    Major problems in the hydroxyapatite (HA), Ca 5(PO 4) 3OH, thin films processing still keep the poor mechanical properties and the lack in density. We present a study on the feasibility of high energy ion-beam implantation technique to densify HA bioceramic films. Crystalline HA films were grown by pulsed laser deposition (PLD) method using an excimer KrF ∗ laser ( λ=248 nm, τ FWHM≥20 ns). The films were deposited on Ti-5Al-2.5Fe alloys substrates previously coated with a ceramic TiN buffer layer. After deposition the films were implanted with Ar + ions at high energy. Optical microscopy (OM), white light confocal microscopy (WLCM), grazing incidence X-ray diffraction (GIXRD) and Berkovich nanoindentation in normal and scratch options have been applied for the characterization of the obtained structures. We put into evidence an enhancement of the mechanical characteristics after implantation, while GIXRD measurements confirm that the crystalline structure of HA phase is preserved. The improvement in mechanical properties is an effect of a densification after ion treatment as a result of pores elimination and grains regrowth.

  1. The effect of deposition atmosphere on the chemical composition of TiN and ZrN thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Stefan, N.; Dorcioman, G.; Hanna, M.; Taylor, C. R.; Lambers, E.; Craciun, V.

    2014-05-01

    Very thin TiN and ZrN films (<500 nm) were grown on (1 0 0) Si substrates at temperatures up to 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under residual vacuum or various mixtures of CH4 or N2. Auger electron spectroscopy investigations found that films contained a relatively low oxygen concentration, usually below 3.0 at%. Films deposited under residual vacuum or very low N2 pressures (<3 × 10-3 Pa) contained 3-6 at% C atoms in the bulk. This fraction grew to 8-10 at% when the deposition was performed under an atmosphere of 2 × 10-3 Pa CH4. To avoid C atoms incorporation into the bulk a deposition pressure of 10 Pa N2 was required. X-ray photoelectron spectroscopy investigations found that oxygen was mostly bonded in an oxynitride type of compound, while carbon was bonded into a metallic carbide. The presence of C atoms in the chemical composition of the TiN or ZrN improved the measured hardness of the films.

  2. Pulsed Laser Tissue Interaction

    NASA Astrophysics Data System (ADS)

    Walsh, Joseph T.; van Leeuwen, Ton G.; Jansen, E. Duco; Motamedi, Massoud; Welch, Ashley J.

    Pulsed lasers, by virtue of their ability to deliver energy in a spatially and temporally confined fashion, are able to micromachine biological tissues. The clinical success of pulsed laser treatment, however, is often limited by the extent of damage that is caused to the tissue in the vicinity of the ablation crater. In general, pulsed ablation is a trade off between thermal damage to surrounding tissue, caused by relatively long pulses (>100 ms), and mechanical damage to surrounding tissue, caused by relatively short pulses (<1 ms). To identify the origin of pulsed laser induced damage, the possible laser tissue interactions and ablation are discussed here and in Chapter 14. The purpose of this chapter is to provide the reader with a condensed overview of the parameters that must be considered in the process of pulsed laser ablation of soft tissue. In this chapter, pulsed infrared ablation of biological soft tissue is used as a paradigm to illustrate the concepts and design considerations. Generally speaking, the absorption of laser light may lead to photothermal, photomechanical or photochemical interaction with the irradiated tissue [1-5]. The vast majority of therapeutic laser-tissue interactions is based on photothermal interactions where laser energy is converted into heat. Subsequent to thermalization of the absorbed optical energy, heat transfer mechanisms, in particular conduction allow thermal diffusion from high temperature areas to surrounding regions. When laser penetration depth is less than the laser spot radius, the thermal diffusion time, τ th, can be defined as:

  3. The influence of the number of pulses on the morphological and photoluminescence properties of SrAl 2O 4:Eu 2+,Dy 3+ thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nsimama, P. D.; Ntwaeaborwa, O. M.; Coetsee, E.; Swart, H. C.

    2009-12-01

    The current work reports on the influence of the number of laser pulses on the morphological and photoluminescence properties of SrAl 2O 4:Eu 2+,Dy 3+ thin films prepared by the pulsed laser deposition (PLD) technique. Atomic force microscopy (AFM) was used to study the surface topography and morphology of the films. The AFM data showed that the film deposited using a higher number of laser pulses was packed with a uniform layer of coarse grains. In addition, the surface of this film was shown to be relatively rougher than the films deposited at a lower number of pulses. Photoluminescence (PL) data were collected using the Cary Eclipse fluorescence spectrophotometer equipped with a monochromatic xenon lamp. An intense green photoluminescence was observed at 517 nm from the films prepared using a higher number of laser pulses. Consistent with the PL data, the decay time of the film deposited using a higher number of pulses was characteristically longer than those of the other films. The effects of laser pulses on morphology, topography and photoluminescence intensity of the SrAl 2O 4:Eu 2+,Dy 3+ thin films are discussed.

  4. Structure/property relationships in pulsed-laser-deposited ferroelectric thin films for frequency-agile microwave electronics

    NASA Astrophysics Data System (ADS)

    Horwitz, James S.; Carter, A. C.; Chang, Wontae; Pond, Jeffrey M.; Kirchoefer, Steven W.; Chrisey, Douglas B.; Levy, J.; Hubert, C.

    1998-06-01

    Low loss ferroelectric thin films deposited by pulsed laser deposition (PLD) are currently being used to develop a new class of tunable microwave circuits based on the electric field dependence of the dielectric constant. Single phase, (100) oriented Ba0.5Sr0.5TiO3 (BST) films have been deposited onto (100) LaAlO3, SrTiO3, and MgO substrates. Interdigitated capacitors have been used to measure the dielectric constant and dissipation factor of these films as a function of DC bias and temperature at 1 MHz and as a function of DC bias at 1 to 20 GHz at room temperature. A low phase noise voltage controlled oscillator is currently being developed for use at frequencies from 1 - 20 GHz. To achieve low phase noise in the oscillator will require the loss tangent in the ferroelectric to be deposited onto SrTiO3 which are not observed for films deposited onto MgO. Dielectric loss in the ferroelectric film is reduced through a combination of post deposition processing and donor/acceptor doping of the films. The lowest dielectric loss measured at microwave frequencies (tan(delta) equals 0.01 at 1 - 10 GHz) has been in a post-deposition annealed Ba0.5Sr0.5TiO3 film doped with approximately 1 - 2 atomic % Mn.

  5. Laser pulse stacking method

    DOEpatents

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  6. Effects of substrate temperature on properties of NbNx films grown on Nb by pulsed laser deposition

    SciTech Connect

    Ashraf Hassan Farha, Ali Oguz Er, Yüksel Ufuktepe, Ganapati Myneni, Hani E. Elsayed-Ali

    2011-12-01

    NbN{sub x} films were deposited on Nb substrate using pulsed laser deposition. The effects of substrate deposition temperature, from room temperature to 950 C, on the preferred orientation, phase, and surface properties of NbN{sub x} films were studied by X-ray diffraction, atomic force microscopy, and electron probe micro analyzer. We find that the substrate temperature is a critical factor in determining the phase of the NbN{sub x} films. For a substrate temperature up to 450 C the film showed poor crystalline quality. With temperature increase the film became textured and for a substrate temperature of 650-850 C, mix of cubic {delta}-NbN and hexagonal phases ({beta}-Nb{sub 2}N + {delta}'-NbN) were formed. Films with a mainly {beta}-Nb{sub 2}N hexagonal phase were obtained at deposition temperature above 850 C. The c/a ratio of {beta}-Nb{sub 2}N hexagonal shows an increase with increased nitrogen content. The surface roughness of the NbN{sub x} films increased as the temperature was raised from 450 to 850 C.

  7. Coating of meso-porous metallic membranes with oriented channel-likefine pores by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mukherji, D.; Lackner, J.; Wanderka, N.; Kardjilov, N.; Näth, O.; Jäger, S.; Schmitz, F.; Rösler, J.

    2008-02-01

    There is increasing demand to functionalize meso- and nanoporous materials by coating and make the porous substrate biocompatible or environmentally friendly. However, coating on a meso-porous substrate poses great challenges, especially if the pore aspect ratio is high. We adopted the pulsed laser deposition (PLD) method to coat Ni3Al-based meso-porous membranes, which were fabricated from a single-crystal Ni-based superalloy by a unique selective phase dissolution technique. These membranes were about 250 µm thick and had channel-like pores (~200 nm wide) with very high aspect ratio. Two different coating materials, i.e. diamond-like carbon (DLC) and titanium, were used to coat these membranes. High energy C or Ti ions, produced in the plasma plume by the PLD process, penetrated the channel-like pores and deposited coatings on the pore walls deep inside the membrane. The thickness and the quality of coatings on the pore walls were examined using the dual-beam system. The coating thickness, of the order of 50 nm, was adherent to the pore walls and was quite uniform at different depths. The carbon and the Ti deposition behaved quite similarly. The preliminary experiments showed that the PLD is an adequate method for coating fine open cavities of complex geometry. Simulations based on stopping and the range of ions in matter (SRIM) calculations helped in understanding the deposition processes on pore walls at great depths.

  8. Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control

    NASA Astrophysics Data System (ADS)

    Hotta, Yasushi; Ueoka, Satoshi; Yoshida, Haruhiko; Arafune, Koji; Ogura, Atsushi; Satoh, Shin-ichi

    2016-10-01

    We investigated the room temperature growth of HfO2 layers on Si substrates by pulsed laser deposition under ultra-high vacuum conditions. The laser fluence (LF) during HfO2 layer growth was varied as a growth parameter in the experiments. X-ray photoemission spectroscopy (XPS) was used to observe the interface chemical states of the HfO2/Si samples produced by various LFs. The XPS results indicated that an interface Hf-silicate layer formed, even at room temperature, and that the thickness of this layer increased with increasing pulsed LF. Additionally, Hf-Si bonds were increasingly formed at the interface when the LF was more than 2 J/cm2. This bond formation process was related to decomposition of HfO2 to its atomic states of Hf and O by multiphoton photochemical processes for bandgap excitation of the HfO2 polycrystalline target. However, the Hf-Si bond content of the interface Hf-silicate layer is controllable under high LF conditions. The results presented here represent a practical contribution to the development of room temperature processing of Hf-compound based devices.

  9. Using shaped pulses to probe energy deposition during laser-induced damage of SiO2 surfaces

    SciTech Connect

    Carr, C W; Cross, D; Feit, M D; Bude, J D

    2008-10-24

    Laser-induced damage initiation in silica has been shown to follow a power-law behavior with respect to pulse-length. Models based on thermal diffusion physics can successfully predict this scaling and the effect of pulse shape for pulses between about 3ns and 10ns. In this work we use sophisticated new measurement techniques and novel pulse shape experiments to test the limits of this scaling. We show that simple pulse length scaling fails for pulses below about 3ns. Furthermore, double pulse initiation experiments suggest that energy absorbed by the first pulse is lost on time scales much shorter than would be predicted for thermal diffusion. This time scale for energy loss can be strongly modulated by maintaining a small but non-zero intensity between the pulses. By producing damage with various pulse shapes and pulse trains it is demonstrated that the properties of any hypothetical thermal absorber become highly constrained.

  10. Mechanical and tribological characterization of tetrahedral diamond-like carbon deposited by femtosecond pulsed laser deposition on pre-treated orthopaedic biomaterials

    NASA Astrophysics Data System (ADS)

    Loir, A.-S.; Garrelie, F.; Donnet, C.; Subtil, J.-L.; Belin, M.; Forest, B.; Rogemond, F.; Laporte, P.

    2005-07-01

    Femtosecond pulsed laser deposition (PLD) has been performed using a mode-locked Ti:sapphire laser including an amplification stage (150 fs, 800 nm, 1 kHz) to deposit tetrahedral-amorphous carbon films (ta-C) on AISI 316L stainless steel and ultra high molecular weight polyethylene, in perspective to extend the wear resistance of materials used in hip joints. Ta-C films have been elaborated in high vacuum conditions at room temperature. The diamond-like coated silicon substrates exhibit high wear resistance (in the 10 -8-10 -9 mm 3 (N m) -1 range) with moderate hardness (in the 20-30 GPa range), which may be favorable for the accommodation motion between contacting surfaces in a hip joint. In situ sputter cleaning of the orthopaedic substrates in argon plasma prior to carbon deposition has been investigated, leading to the enhancement of the adhesion of the films onto the stainless steel substrates. The adhesion properties of films deposited in various conditions on metallic substrates have been studied by tensile tests. The tribological behavior of the coatings deposited on cleaned substrates have been widely investigated in a pin-on-flat configuration in ambient air and Ringer solution. Finally, a DLC thin film with an homogeneous thickness has been deposited on hemispherical surface of 22.2 mm in diameter of a stainless steel femoral head of a hip prosthesis, whose wear behavior will be quantified using a hip joint simulator during one million of cycles (corresponding to the human activity during one year).

  11. Laser fusion pulse shape controller

    DOEpatents

    Siebert, Larry D.

    1977-01-01

    An apparatus for controlling the pulse shape, i.e., the pulse duration and intensity pattern, of a pulsed laser system, and which is particularly well adapted for controlling the pellet ignition pulse in a laser-driven fusion reaction system. The apparatus comprises a laser generator for providing an optical control pulse of the shape desired, a pulsed laser triggered by the control pulse, and a plurality of optical Kerr-effect gates serially disposed at the output of the pulsed laser and selectively triggered by the control pulse to pass only a portion of the pulsed laser output generally corresponding in shape to the control pulse.

  12. Characteristics of ZrC/ZrN and ZrC/TiN multilayers grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Bourne, G.; Socol, G.; Stefan, N.; Dorcioman, G.; Lambers, E.; Craciun, V.

    2011-04-01

    ZrC/ZrN and ZrC/TiN multilayers were grown on (1 0 0) Si substrates at 300 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser. X-ray diffraction investigations showed that films were crystalline, the strain and grain size depending on the nature and pressure of the gas used during deposition. The elemental composition, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed that films contained a low level of oxygen contamination. Simulations of the X-ray reflectivity (XRR) curves acquired from films indicated a smooth surface morphology, with roughness below 1 nm (rms) and densities very close to bulk values. Nanoindentation results showed that the ZrC/ZrN and ZrC/TiN multilayer samples exhibited hardness values between 30 and 33 GPa, slightly higher than the values of 28-30 GPa measured for pure ZrC, TiN and ZrN films.

  13. Thin-film growth of (110) rutile TiO2 on (100) Ge substrate by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Suzuki, Yoshihisa; Nagata, Takahiro; Yamashita, Yoshiyuki; Nabatame, Toshihide; Ogura, Atsushi; Chikyow, Toyohiro

    2016-06-01

    The deposition conditions of (100) rutile TiO2 grown on p-type (100) Ge substrates by pulsed laser deposition (PLD) were optimized to improve the electrical properties of the TiO2/Ge structure. Increasing the substrate temperature (T sub) enhanced the grain growth, the surface roughness of the film, and Ge diffusion into the TiO2 layer. The growth rate, which was controlled by the laser density in PLD (L d), affected the Ge diffusion. L d of 0.35 J/cm2 (0.37 nm/min) enhanced the Ge diffusion and improved the crystallinity and surface roughness at a temperature of 450 °C, at which GeO x undergoes decomposition and desorption. However, the Ge diffusion into TiO2 degraded the electrical properties. By using the optimized conditions (L d = 0.7 J/cm2 and T sub = 420 °C) with postannealing, the TiO2/Ge structure showed an improvement in the leakage current of 3 orders of magnitude and the capacitance-voltage property characteristics indicated the formation of a p-n junction.

  14. Effect of phase transformation on optical and dielectric properties of pulsed laser deposited ZnTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.; Salim, Mohammad; Kaur, Davinder

    2016-04-01

    Zinc titanate (ZnTiO3) ceramics were prepared by conventional solid state reaction method using ZnO and TiO2 in a molar ratio of 1:1 with optimized parameters. It was found that the sample sintered at 800 °C for 12 h exhibit single hexagonal phase of ZnTiO3. ZnTiO3 thin film have been deposited on ITO coated glass substrate using pulsed laser deposition (PLD) technique employing a KrF laser source (λ = 248 nm). In present work, the effect of substrate temperature, which leads to transformation of hexagonal phase to cubic phase, has been studied. The XRD pattern revealed that pure hexagonal phase of ZnTiO3 appear upto 400 °C and more increment in substrate temperature leads to transformation of hexagonal phase to cubic phase. We have observed the blue shift in absorption edge at lower temperature. When the substrate temperature increases from 300 to 400 °C the band gap decreases due to strong hexagonal phase, but more increment in substrate temperature increases the band gap causes by change of phase from hexagonal to cubic. The dielectric constant of ZnTiO3 thin film increases as the substrate temperature increases due to the enhancement in crystallinity and improved morphology.

  15. Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

    SciTech Connect

    Jacimovic, J; Gaal, R; Magrez, Arnaud; Forro, Laszlo; Regmi, Murari; Eres, Gyula

    2013-01-01

    The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.

  16. Structural and magnetic characterization of ZnCo2O4 thin film prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wen, X. L.; Chen, Z.; Liu, E. H.; Lin, X.

    2015-12-01

    We report the structural and magnetic characterization of ZnCo2O4 (ZCO) thin films fabricated by pulsed laser deposition on sapphire substrates. Structural analysis measured by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and atomic force microscope (AFM) shows that the ZCO thin film grew in a layer-by-layer mode, and forms a cubic spinel structure with Fd-3m space group. Electronic states detected by X-ray photoelectron spectroscopy (XPS) prove that Co2+ ions occupied on the Zn sites in the ZCO film and oxygen vacancies exist. Magnetic measurements show a strong ferromagnetic behavior. The possible mechanisms for the ferromagnetic property are extensively discussed. Our work is believed to contribute a good understanding of the microscopic ferromagnetism origin of the high-Tc ZCO film, which is significant for expanding their applications into high-effective spin-electronic devices.

  17. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    SciTech Connect

    Onbasli, M. C. Kim, D. H.; Ross, C. A.; Kehlberger, A.; Jakob, G.; Kläui, M.; Chumak, A. V.; Hillebrands, B.

    2014-10-01

    Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm{sup −3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup −4}. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  18. Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

    SciTech Connect

    Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk

    2014-06-09

    Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600 °C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

  19. Graphene-based textured surface by pulsed laser deposition as a robust platform for surface enhanced Raman scattering applications

    SciTech Connect

    Tite, T.; Donnet, C.; Loir, A.-S.; Reynaud, S.; Michalon, J.-Y.; Vocanson, F.; Garrelie, F.

    2014-01-27

    We have developed a surface enhanced Raman scattering (SERS)-active substrate based on gold nanoparticles-decorated few-layer (fl) graphene grown by pulsed laser deposition. Diamond-Like Carbon film has been converted to fl-graphene after thermal annealing at low temperature. The formation of fl-graphene was confirmed by Raman spectroscopy, and surface morphology was highlighted by scanning electron microscopy. We found that textured fl-graphene film with nanoscale roughness was highly beneficial for SERS detection. Rhodamine 6G and p-aminothiophenol proposed as test molecules were detected with high sensitivity. The detection at low concentration of deltamethrin, an active molecule of a commercial pesticide was further demonstrated.

  20. Three-dimensional microstructure of high-performance pulsed-laser deposited Ni-YSZ SOFC anodes.

    PubMed

    Kennouche, David; Hong, Jongsup; Noh, Ho-Sung; Son, Ji-Won; Barnett, Scott A

    2014-08-01

    The Ni-yttria-stabilized zirconia (YSZ) anode functional layer in solid oxide fuel cells produced by pulsed laser-deposition was studied using three-dimensional tomography. Anode feature sizes of ~130 nm were quite small relative to typical anodes, but errors arising in imaging and segmentation were shown using a sensitivity analysis to be acceptable. Electrochemical characterization showed that these cells achieved a relatively high maximum power density of 1.4 W cm(-2) with low cell resistance at an operating temperature of 600 °C. The tomographic data showed anode three-phase boundary density of ~56 μm(-2), more than 10 times the value observed in conventional Ni-YSZ anodes. Anode polarization resistance values, predicted by combining the structural data and literature values of three-phase boundary resistance in an electrochemical model, were consistent with measured electrochemical impedance spectra, explaining the excellent intermediate-temperature performance of these cells.

  1. Structural and magnetic properties of epitaxial delafossite CuFeO{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Joshi, Toyanath; Senty, Tess R.; Trappen, Robbyn; Zhou, Jinling; Borisov, Pavel; Holcomb, Mikel B.; Bristow, Alan D.; Lederman, David; Chen, Song; Song, Xueyan; Ferrari, Piero; Cabrera, Alejandro L.

    2015-01-07

    Growth of pure phase delafossite CuFeO{sub 2} thin films on Al{sub 2}O{sub 3} (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO{sub 2} films demonstrated a phase transition at T{sub C} ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO{sub 2}. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

  2. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    NASA Astrophysics Data System (ADS)

    Onbasli, M. C.; Kehlberger, A.; Kim, D. H.; Jakob, G.; Kläui, M.; Chumak, A. V.; Hillebrands, B.; Ross, C. A.

    2014-10-01

    Yttrium iron garnet (YIG, Y 3Fe5O12) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (˜135 emu cm-3), in-plane easy axis, and damping parameters as low as 2.2 × 10-4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  3. Electrochemical studies of the LiFePO thin films prepared with pulsed laser deposition

    SciTech Connect

    Song, Seung-Wan; Reade, Ronald P.; Striebel, Kathryn A.

    2003-05-20

    Thin films of LiFePO4 have been prepared on stainless steel substrates with pulsed laser deposition utilizing an Ar atmosphere. Films were characterized with XRD, SEM, Raman spectroscopy and electrochemistry in liquid electrolyte. Raman spectral analysis revealed the presence of carbon in the films, even though the targets contained less than a few percent residual carbon. The Raman spectra also suggest the presence of various iron oxide species on the surface of the film. The 75nm film showed reversible cycling of more than 90 mAh/g for 60 cycles and a coulombic efficiency close to 1. Variable sweep rate cyclic voltammetry showed a diffusion-controlled reaction with an effective diffusivity of about 10-12 cm2/s. The performance of the thicker film was poor with a coulombic efficiency much less than 1.

  4. Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Fabi; Arita, Makoto; Wang, Xu; Chen, Zhengwei; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Motooka, Teruaki; Guo, Qixin

    2016-09-01

    Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm-3 while the conductivity from 10-4 to 1 S cm-1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.

  5. Modification of the chemical composition, morphology, and antireflection properties of WSe x films formed by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Grigoriev, S. N.; Nevolin, V. N.; Fominski, V. Yu.; Romanov, R. I.; Volosova, M. A.

    2014-09-01

    We have studied the possibility of controlling important structural characteristics of WSe x films, which belong to the class of layered materials and have good prospects for application in modern nano- and optoelectronic devices. It is established that, by using thermal treatment and ion irradiation during pulsed laser deposition (PLD) in the shadow of an antidroplet shield, it is possible to vary the Se/W atomic ratio from 5 to 1.5, change the character of atomic packing, and obtain films with either smooth or rough surfaces. An increase in the height of parabolic protrusions on the surface up to 200-500 nm leads to a decrease in the optical reflection coefficient in a broad wavelength range from 30% (typical of smooth films) to 6%, which can favor a significant increase in the efficiency of solar cells based on semiconductor films of this type.

  6. Characteristics of ultraviolet-assisted pulsed-laser-deposited Y{sub 2}O{sub 3} thin films

    SciTech Connect

    Cracium, V.; Lambers, E. S.; Bassim, N. D.; Singh, R. K.; Craciun, D.

    2000-02-01

    The properties of thin Y{sub 2}O{sub 3} films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (PLD) technique were studied. With respect to Y{sub 2}O{sub 3} films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD-grown films exhibited better structural and optical properties, especially for lower substrate temperatures, from 340 to 400 degree sign C. These layers were highly crystalline and textured along the (111) direction, and their refractive index values were similar to those of reference Y{sub 2}O{sub 3} layers. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD-grown layers. (c) 2000 Materials Research Society.

  7. Growth and properties of YBCO thin films on polycrystalline Ag substrates by inclined substrate pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Li, M.; Ma, B.; Koritala, R. E.; Fisher, B. L.; Dorris, S. E.; Venkataraman, K.; Balachandran, U.

    2002-06-01

    Fully c-axis-oriented YBCO films were directly deposited on polycrystalline silver substrates by inclined substrate pulsed laser ablation. The orientation and microstructure of the YBCO films were characterized by x-ray diffraction 2θ-scans, Ω-scans and pole figure analysis. Surface morphology was examined by scanning electron microscopy. Irregular-mosaic-shaped supergrains were observed in the films. Raman spectroscopy was used to evaluate the quality of the YBCO films. The superconducting transition temperature (Tc) and the critical current density (Jc) of the films were determined by inductive and transport measurements, respectively. Tc = 91 K with sharp transition and Jc = 2.7 × 105 A cm-2 at 77 K in zero field were obtained on a film that was 0.14 μm thick, 5 mm wide and 10 mm long. This work demonstrated a promising approach to obtain high-Jc YBCO films on nontextured polycrystalline silver substrate.

  8. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Ping; Yu, Pin-Feng; Wang, Jyhpyng; Lin, Jiunn-Yuan; Chen, Yen-Mu; Chen, Szu-yuan

    2016-08-01

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  9. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

    SciTech Connect

    Majid, S. S. Rahman, F.; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.

    2015-06-24

    We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.

  10. Auger electron spectroscopy study and depth profile analyses of the CaS:Eu2+ pulsed laser deposited thin luminescent films

    NASA Astrophysics Data System (ADS)

    Nyenge, R. L.; Swart, H. C.; Ntwaeaborwa, O. M.

    2016-06-01

    This paper presents the results of a study of the chemical composition, depth profile analyses of pulsed laser deposited CaS:Eu2+ thin films grown at different substrate temperatures. Using Auger electron spectroscopy, we have shown that the thin film grown in an argon atmosphere shows sulfur deficiency as the substrate temperature is increased from 200 to 650 °C.

  11. Design and performance of a ZnSe tetra-prism for homogeneous substrate heating using a CO2 laser for pulsed laser deposition experiments.

    PubMed

    May-Smith, T C; Muir, A C; Darby, M S B; Eason, R W

    2008-04-10

    We report on the design and performance of a ZnSe tetra-prism for homogeneous substrate heating using a continuous wave CO(2) laser beam in pulsed laser deposition experiments. We discuss here three potential designs for homogenizing prisms and use ray-tracing modeling to compare their operation to an alternative square-tapered beam-pipe design. A square-pyramidal tetra-prism design was found to be optimal and was subjected to modeling and experimental testing to determine the influence of interference and diffraction effects on the homogeneity of the resultant intensity profile produced at the substrate surface. A heat diffusion model has been used to compare the temperature distributions produced when using various different source intensity profiles. The modeling work has revealed the importance of substrate thickness as a thermal diffuser in producing a resultant homogeneous substrate temperature distribution. PMID:18404174

  12. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    SciTech Connect

    Sanchez-Ake, C.; Camacho, R.; Moreno, L.

    2012-08-15

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction between plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.

  13. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    NASA Astrophysics Data System (ADS)

    Sánchez-Aké, C.; Camacho, R.; Moreno, L.

    2012-08-01

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 μs as the interaction between plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than ˜100 μs, the expansion of the second plume through the region behind the first plume affects the composition of the film.

  14. Coating of meso-porous metallic membranes with oriented channel-like fine pores by pulsed laser deposition.

    PubMed

    Mukherji, D; Lackner, J; Wanderka, N; Kardjilov, N; Näth, O; Jäger, S; Schmitz, F; Rösler, J

    2008-02-13

    There is increasing demand to functionalize meso- and nanoporous materials by coating and make the porous substrate biocompatible or environmentally friendly. However, coating on a meso-porous substrate poses great challenges, especially if the pore aspect ratio is high. We adopted the pulsed laser deposition (PLD) method to coat Ni(3)Al-based meso-porous membranes, which were fabricated from a single-crystal Ni-based superalloy by a unique selective phase dissolution technique. These membranes were about 250 µm thick and had channel-like pores (∼200 nm wide) with very high aspect ratio. Two different coating materials, i.e. diamond-like carbon (DLC) and titanium, were used to coat these membranes. High energy C or Ti ions, produced in the plasma plume by the PLD process, penetrated the channel-like pores and deposited coatings on the pore walls deep inside the membrane. The thickness and the quality of coatings on the pore walls were examined using the dual-beam system. The coating thickness, of the order of 50 nm, was adherent to the pore walls and was quite uniform at different depths. The carbon and the Ti deposition behaved quite similarly. The preliminary experiments showed that the PLD is an adequate method for coating fine open cavities of complex geometry. Simulations based on stopping and the range of ions in matter (SRIM) calculations helped in understanding the deposition processes on pore walls at great depths. PMID:21730712

  15. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  16. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Hui; Wang, Wenliang; Liu, Zuolian; Li, Guoqiang

    2013-03-01

    2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.

  17. Low temperature epitaxy of Ge-Sb-Te films on BaF{sub 2} (111) by pulsed laser deposition

    SciTech Connect

    Thelander, E. Gerlach, J. W.; Ross, U.; Lotnyk, A.; Rauschenbach, B.

    2014-12-01

    Pulsed laser deposition was employed to deposit epitaxial Ge{sub 2}Sb{sub 2}Te{sub 5}-layers on the (111) plane of BaF{sub 2} single crystal substrates. X-ray diffraction measurements show a process temperature window for epitaxial growth between 85 °C and 295 °C. No crystalline growth is observed for lower temperatures, whereas higher temperatures lead to strong desorption of the film constituents. The films are of hexagonal structure with lattice parameters consistent with existing models. X-ray pole figure measurements reveal that the films grow with one single out-of-plane crystal orientation, but rotational twin domains are present. The out-of-plane epitaxial relationship is determined to be Ge{sub 2}Sb{sub 2}Te{sub 5}(0001) || BaF{sub 2}(111), whereas the in-plane relationship is characterized by two directions, i.e., Ge{sub 2}Sb{sub 2}Te{sub 5} [-12-10] || BaF{sub 2}[1-10] and Ge{sub 2}Sb{sub 2}Te{sub 5}[1-210] || BaF{sub 2}[1-10]. Aberration-corrected high-resolution scanning transmission electron microscopy was used to resolve the local atomic structure and confirm the hexagonal structure of the films.

  18. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O.

    2010-09-15

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  19. Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Kai; Jiang, Ming-Chien

    2016-09-01

    In this study, we investigated the microstructure and optical properties of hexagonal GaN (h-GaN) films grown by high-temperature pulsed laser deposition (PLD) on Si(100) and Si(111) substrates. The growth mechanism, crystallization, and surface morphology of h-GaN deposition on both Si(100) and Si(111) substrates were monitored by transmission electron microscopy (TEM) and scanning electron microscopy at various times in the growth process. Our results indicated that the h-GaN grown on Si(111) has better crystalline structure and optical properties than that on Si(100) owing to the smaller mismatch of the orientations of the Si(111) substrate and h-GaN film. On the Si(100) substrate, the growth principles of PLD and N2 plasma nitridation are the main contributions to the conversion of the cubic GaN into h-GaN. Moreover, no significant Ga–Si meltback etching was observed on the GaN/Si surface with the PLD operation temperature of 1000 °C. The TEM images also revealed that an abrupt GaN/Si interface can be obtained because of the suppression of substrate–film interfacial reactions in PLD.

  20. Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

    SciTech Connect

    Kuznetsov, Vladimir L.; Vai, Alex T.; Edwards, Peter P.; Al-Mamouri, Malek; Stuart Abell, J.; Pepper, Michael

    2015-12-07

    Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

  1. Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Kai; Jiang, Ming-Chien

    2016-09-01

    In this study, we investigated the microstructure and optical properties of hexagonal GaN (h-GaN) films grown by high-temperature pulsed laser deposition (PLD) on Si(100) and Si(111) substrates. The growth mechanism, crystallization, and surface morphology of h-GaN deposition on both Si(100) and Si(111) substrates were monitored by transmission electron microscopy (TEM) and scanning electron microscopy at various times in the growth process. Our results indicated that the h-GaN grown on Si(111) has better crystalline structure and optical properties than that on Si(100) owing to the smaller mismatch of the orientations of the Si(111) substrate and h-GaN film. On the Si(100) substrate, the growth principles of PLD and N2 plasma nitridation are the main contributions to the conversion of the cubic GaN into h-GaN. Moreover, no significant Ga-Si meltback etching was observed on the GaN/Si surface with the PLD operation temperature of 1000 °C. The TEM images also revealed that an abrupt GaN/Si interface can be obtained because of the suppression of substrate-film interfacial reactions in PLD.

  2. Fabrication of Ce:YIG film with different composition by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Nakata, Yoshiki; Tashiro, Yuko; Okada, Tatsuo; Maeda, Mitsuo; Higuchi, Sadao; Ueda, Kiyotaka

    2002-02-01

    Ce-doped yttrium iron garnet (Ce:YIG) with different compositions of Y2CeFe5O12, Y2CeFe4.25Ga0.75O12, Y1.6Gd0.4CeFe5O12 were deposited by PLD on GGG(111) SUBSTRATE. The crystallinity, transmittance and surface morphology were observed for the films deposited at different depositions conditions of argon or oxygen gas pressures and substrate temperatures.

  3. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  4. Pulse plating of nickel deposits

    SciTech Connect

    Stimetz, C.J.; Stevenson, M.F.

    1980-02-01

    Pulse plated and conventional nickel deposits have been compared for differences in morphology, mechanical properties, and microstructure. The deposits were obtained from nickel sulfamate, nickel chloride, and Watts nickel plating solutions. No significant differences were found in the direct and pulse current deposits from the sulfamate and chloride solutions; however, significant differences in microstructure, yield strength, and microhardness were observed in deposits from the Watts nickel solution.

  5. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

  6. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. PMID:26402298

  7. Growth and microstructure of columnar Y-doped SrZrO{sub 3} films deposited on Pt-coated MgO by pulsed laser deposition

    SciTech Connect

    Luo, Sijun Riggs, Brian C.; Shipman, Joshua T.; Adireddy, Shiva; Sklare, Samuel C.; Chrisey, Douglas B.; Zhang, Xiaodong; Koplitz, Brent

    2015-07-21

    Direct integration of proton conductor films on Pt-coated substrates opens the way to film-based proton transport devices. Columnar SrZr{sub 0.95}Y{sub 0.05}O{sub 3−δ} (SZY) films with dense microstructure were deposited on Pt-coated MgO(100) substrates at 830 °C by pulsed laser deposition. The optimal window of ambient O{sub 2} pressure for good crystallinity of SZY films is from 400 to 600 mTorr. The ambient O{sub 2} compresses the plasma plume of SZY and increases the deposition rate. The 10 nm thick Ti adhesion layer on MgO(100) greatly affects the orientation of the sputtered Pt layers. Pt deposited directly on MgO shows a highly (111)-preferred orientation and leads to preferentially oriented SZY films while the addition of a Ti adhesion layer makes Pt show a less preferential orientation that leads to randomly oriented SZY films. The RMS surface roughness of preferentially oriented SZY films is larger than that of randomly oriented SZY films deposited under the same ambient O{sub 2} pressure. As the O{sub 2} pressure increased, the RMS surface roughness of preferentially oriented SZY films increased, reaching 45.7 nm (2.61% of film thickness) at 600 mTorr. This study revealed the ambient O{sub 2} pressure and orientation dependent surface roughness of SZY films grown on Pt-coated MgO substrates, which provides the potential to control the surface microstructure of SZY films for electrochemical applications in film-based hydrogen devices.

  8. Effects of laser energy fluence on the onset and growth of the Rayleigh-Taylor instabilities and its influence on the topography of the Fe thin film grown in pulsed laser deposition facility

    SciTech Connect

    Mahmood, S.; Rawat, R. S.; Wang, Y.; Lee, S.; Tan, T. L.; Springham, S. V.; Lee, P.; Zakaullah, M.

    2012-10-15

    The effect of laser energy fluence on the onset and growth of Rayleigh-Taylor (RT) instabilities in laser induced Fe plasma is investigated using time-resolved fast gated imaging. The snow plow and shock wave models are fitted to the experimental results and used to estimate the ablation parameters and the density of gas atoms that interact with the ablated species. It is observed that RT instability develops during the interface deceleration stage and grows for a considerable time for higher laser energy fluence. The effects of RT instabilities formation on the surface topography of the Fe thin films grown in pulsed laser deposition system are investigated (i) using different laser energy fluences for the same wavelength of laser radiation and (ii) using different laser wavelengths keeping the energy fluence fixed. It is concluded that the deposition achieved under turbulent condition leads to less smooth deposition surfaces with bigger sized particle agglomerates or network.

  9. Magnetic Properties and Structure of Iron-Nickel Nanoparticles and Thin Films Synthesized by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Ibrahim, Sally Ahmed

    The study of new combinations of self-assembled magnetic materials in nanoparticle and thin film form is becoming increasingly important with the continuous shrinking of data storage device size with higher densities. The work presented in this dissertation is focused towards synthesis, structural characterizations, and magnetic properties of an L10 iron-nickel (Fe50Ni50) phase that has a potential to replace noble metals based L10 magnetic materials, such as Ni-Pt, Fe-Pt, being used as recording media. Fe50Ni50 was fabricated using a pulsed laser disposition (PLD) method under various deposition conditions, the most important among which was the substrate temperature. The substrate temperature was varied all the way from liquid nitrogen boiling temperature of 77K (-196 ºC) to high temperatures up to 600 ºC. In order to understand and optimize the formation of L10 phase, the PLD method was used to fabricate FeNi in three distinct ways: (i) FeNi films were prepared using a FeNi composite (alloy) target, (ii) FeNi films were fabricated in a multilayered structure using sequential ablation of Fe and Ni targets, and (iii) FeNi thin films were fabricated in alumina (Al2O3)/FeNi/Al2O 3 sandwich structures. To promote the stabilization of L10 FeNi phase, a thin film layer of gold catalyst was deposited prior to the deposition of FeNi films. FeNi films deposited in the presence or absence of gold catalyst were annealed at 600°C for 1 hour to study effect of annealing that has been found to bring about significant alterations in structural and magnetic properties. The substrate materials such as silicon and sapphire were also found to play a significant role in the microstructural and magnetic properties of the FeNi films. The FeNi samples deposited at liquid nitrogen temperature were found to be completely glassy (amorphous), and they exhibited a perfect superparamagnetic behavior, making them good candidates for magnetic biomedical devices.

  10. Deposition head for laser

    DOEpatents

    Lewis, Gary K.; Less, Richard M.

    1999-01-01

    A deposition head for use as a part of apparatus for forming articles from materials in particulate form in which the materials are melted by a laser beam and deposited at points along a tool path to form an article of the desired shape and dimensions. The deposition head delivers the laser beam and powder to a deposition zone, which is formed at the tip of the deposition head. A controller comprised of a digital computer directs movement of the deposition zone along the tool path and provides control signals to adjust apparatus functions, such as the speed at which the deposition head moves along the tool path.

  11. Matrix-assisted pulsed laser deposition of croconic acid, a diprotic organic ferroelectric

    NASA Astrophysics Data System (ADS)

    O'Malley, S. M.; Yi, Sun Yong; Jimenez, Richard; Corgan, Jeffrey; Borchert, James; Kuchmek, John; Papantonakis, M. R.; McGill, R. A.; Bubb, D. M.

    2011-11-01

    MAPLE has long been demonstrated as a successful tool for the deposition of relatively large polymerics and biomaterials. Less work has been done with small-mass organic compounds. In this work, MAPLE has been demonstrated as a viable materials processing technique for 4,5-dihydroxycyclopentenetrione, a diprotic hydroxylic acid, more commonly known as croconic acid ((C=O)3(COH)2). Croconic acid readily dissociates in solution, and, as prepared in the solvent matrices used in this study, was deposited in large part as the solvated croconate conjugate base. Various substrates were utilized and the deposited films were characterized by infrared spectroscopy, atomic and piezo-force microscopy, scanning electron microscopy, and second harmonic generation measurements. This material has potential application in nonlinear optics and green computing as memory elements.

  12. Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

    PubMed

    Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

    2013-03-25

    InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

  13. Highly oriented ferroelectric CaBi{sub 2}Nb{sub 2}O{sub 9} thin films deposited on Si(100) by pulsed laser deposition

    SciTech Connect

    Desu, S.B.; Cho, H.S.; Joshi, P.C.

    1997-03-01

    We report the successful deposition of highly c-axis oriented CaBi{sub 2}Nb{sub 2}O{sub 9} (CBN) thin films directly on p-type Si(100) substrates by pulsed laser deposition. The CBN thin films exhibited good structural, dielectric, and CBN/Si interface characteristics. The electrical measurements were conducted on CBN thin films in a metal{endash}ferroelectric{endash}semiconductor (MFS) capacitor configuration. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 80 and 0.051, respectively. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10{sup {minus}7}A/cm{sup 2} at an applied electric field of 100 kV/cm. The capacitance{endash}voltage measurements on MFS capacitors established good ferroelectric polarization switching characteristics. {copyright} {ital 1997 American Institute of Physics.}

  14. Nanomechanical and electrical properties of Nb thin films deposited on Pb substrates by pulsed laser deposition as a new concept photocathode for superconductor cavities

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Panareo, M.; Monteduro, A. G.; Maruccio, G.; Broitman, E.; Perrone, A.

    2015-12-01

    We report a design of photocathode, which combines the good photoemissive properties of lead (Pb) and the advantages of superconducting performance of niobium (Nb) when installed into a superconducting radio-frequency gun. The new configuration is obtained by a coating of Nb thin film grown on a disk of Pb via pulsed laser deposition. The central emitting area of Pb is masked by a shield to avoid the Nb deposition. The nanomechanical properties of the Nb film, obtained through nanoindentation measurements, reveal a hardness of 2.8±0.3 GPa, while the study of the electrical resistivity of the film shows the appearance of the superconducting transitions at 9.3 K and 7.3 K for Nb and Pb, respectively, very close to the bulk material values. Additionally, morphological, structural and contamination studies of Nb thin film expose a very low droplet density on the substrate surface, a small polycrystalline orientation of the films and a low contamination level. These results, together with the acceptable Pb quantum efficiency of 2×10-5 found at 266 nm, demonstrate the potentiality of the new concept photocathode.

  15. Large-Area Deposition of MoS2 by Pulsed Laser Deposition with In Situ Thickness Control.

    PubMed

    Serna, Martha I; Yoo, Seong H; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N; Kim, Moon J; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A

    2016-06-28

    A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 10(4) Ω cm(-1), were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited. PMID:27219117

  16. Large-Area Deposition of MoS2 by Pulsed Laser Deposition with In Situ Thickness Control.

    PubMed

    Serna, Martha I; Yoo, Seong H; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N; Kim, Moon J; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A

    2016-06-28

    A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 10(4) Ω cm(-1), were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.

  17. Production of high-performance and improved-durability Pt-catalyst /support for proton-exchange-membrane fuel cells with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Ting-Wei; Qayyum, Hamza; Lin, Guan-Ren; Chen, Szu-yuan; Tseng, Chung-Jen

    2016-06-01

    Pulsed laser deposition in Ar atmosphere is used to deposit Pt nanoparticles onto gas diffusion layer, and its application to proton-exchange-membrane fuel cell is optimized and characterized. When used at anode side, with a Pt loading of 17 μg cm-2 the fuel-cell current density at 0.6 V reaches 1.08 A cm-2, which is close to that of a cell with the anode made by conventional slurry process using E-TEK Pt /C of 200 μg cm-2 Pt loading. The usage of Pt is decreased by 12 fold. Such a low usage of Pt prepared by pulsed laser deposition can be ascribed to the prevention of forming isolated regions that occurs with Pt /C slurry, good dispersion of Pt particles on support, and small particle sizes of 2-3 nm. Furthermore, using accelerated degradation test, it is found that the pulsed laser deposition sample retains 60% of its initial electrochemical surface area after 5000 potential cycles, much higher than that with E-TEK Pt /C, which retains only 7% of its initial electrochemical surface area. The higher electrochemical durability can be attributed to the higher degree of graphitization in the gas diffusion layer used as compared with the carbon black in E-TEK Pt /C, which leads to stronger binding of the Pt nanoparticles onto the carbon support and stronger corrosion resistance of the carbon support.

  18. Production of high-performance and improved-durability Pt-catalyst /support for proton-exchange-membrane fuel cells with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Ting-Wei; Qayyum, Hamza; Lin, Guan-Ren; Chen, Szu-yuan; Tseng, Chung-Jen

    2016-06-01

    Pulsed laser deposition in Ar atmosphere is used to deposit Pt nanoparticles onto gas diffusion layer, and its application to proton-exchange-membrane fuel cell is optimized and characterized. When used at anode side, with a Pt loading of 17 μg cm‑2 the fuel-cell current density at 0.6 V reaches 1.08 A cm‑2, which is close to that of a cell with the anode made by conventional slurry process using E-TEK Pt /C of 200 μg cm‑2 Pt loading. The usage of Pt is decreased by 12 fold. Such a low usage of Pt prepared by pulsed laser deposition can be ascribed to the prevention of forming isolated regions that occurs with Pt /C slurry, good dispersion of Pt particles on support, and small particle sizes of 2–3 nm. Furthermore, using accelerated degradation test, it is found that the pulsed laser deposition sample retains 60% of its initial electrochemical surface area after 5000 potential cycles, much higher than that with E-TEK Pt /C, which retains only 7% of its initial electrochemical surface area. The higher electrochemical durability can be attributed to the higher degree of graphitization in the gas diffusion layer used as compared with the carbon black in E-TEK Pt /C, which leads to stronger binding of the Pt nanoparticles onto the carbon support and stronger corrosion resistance of the carbon support.

  19. Growth of Zinc Phosphide (Zn3P2) and Iron Disulfide (FeS2) using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vaddi, Rajesh

    The growing energy needs of society have triggered tremendous interest in the development of photovoltaics formed from earth abundant materials. Zinc Phosphide (Zn3P2) and Iron Pyrite (FeS2) are two materials formed from elements with large Earth crustal abundances that have nearly ideal band gap energies (1.5eV and 0.96 eV, respectively) and optical absorption coefficients (~104 /cm) for use as absorber layers in solar cells. In this work, the structural, optical, and electronic properties of these materials produced in thin film form using pulsed laser deposition have been explored. Stoichiometric Zn3P2 thin films were obtained at a laser energy density of 3 J/cm2. However, these films were found to be amorphous. Crystallization of these highly resistive amorphous thin films was possible after rapid thermal annealing (RTA). A near optimal band gap of 1.6 eV and a high absorption coefficient of >104/cm were observed for samples annealed at 500 C for 60 seconds when high ramp rates of 150 °C/sec were used for annealing. XPS studies showed the presence of a trace amount of oxygen in the samples upon depth profiling. Schottky barrier heights were extracted for samples annealed at 350 °C and 500 °C with different metals. Al and Mg showed higher barrier heights with good diode rectification behavior. Fermi level pinning was shown to be a significant concern in both cases due to the large values of interface states observed (> 1013/cm2-eV). A Schottky barrier solar cell was fabricated using these films and showed low efficiency with a low Voc of 410 mV that was impacted by Fermi level pinning. Growth of Iron pyrite thin films from an FeS target was demonstrated for the first time using pulsed laser deposition. For the different laser energy densities and substrate temperatures explored, amorphous FeS (Pyrrhotite) was mainly produced. Conversion of FeS to FeS2 was obtained by sulfurization of thin films at 350 °C for times of 30 minutes at a N2 flow rates of 200

  20. Influence of a TiN interlayer on the microstructure and mechanical properties of hydroxyapatite films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nelea, Valentin D.; Ristoscu, Carmen; Colis, Silviu; Arens, Simona; Pelletier, Herve; Mihailescu, Ion N.; Mille, Pierre

    2001-04-01

    Crystalline hydroxyapatite (HA) thin films grown on metallic substrates is the best choice for bone restoration. This is due to the good biological compatibility of the hydroxyapatite material combined with the good mechanical characteristics of the substrates. We deposit HA thin films by Pulsed Laser Deposition (PLD) in vacuum at room temperature using a KrF* excimer laser ((lambda) equals 248 nm, (tau) FWHM >= 20 ns). The depositions were performed directly on Ti-5Al-2.5Fe or on substrates previously coated with a TiN buffer layer. The HA deposited structures were characterized by complementary techniques: GIXRD, SEM, TEM, SAED, EDS and nanoindentation. Properties of the HA films grown with and without the TiN buffer were discussed in term of microstructure and mechanical behavior. The films with interlayer preserve the stoichiometry, are completely recrystallized and present better mechanical characteristics as compared with those without buffer.

  1. Microstructure and mechanical characteristics of hydroxyapatite coatings on Ti/TiN/Si substrates synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pelletier, Hervè; Carradò, Adele; Faerber, Jacques; Mihailescu, Ion N.

    2011-03-01

    We synthesized by pulsed laser deposition a bilayer of Ti/TiN on Si(100) wafers which was coated in a next step with hydroxyapatite (samples labelled HA-1). Some of the structures were further thermally treated in a water vapour jet (samples labelled HA-2). In SEM, the HA surface looked rough, with micronic droplets. TEM and SAED investigations revealed a compact organization of HA crystals in the case of the HA-1 sample, while two regions (one compact and one porous) were identified for the HA-2 sample, with triclinic HA crystals within the 500 nm range. In XTEM, at the Si/TiN border, a 2-3 nm SiO2 layer was visible, whereas at the TiN/Ti border there was a smooth transition from fcc (111) TiN to hcp (100) Ti. The HA crystals were elongated normal to the surface. According to Berkovich indentation qualitative analyses, the sample HA-1 was more homogeneous and harder but brittle. Scratch tests confirmed quantitatively that HA-1 was more resistant and adherent than HA-2 films. In the first case, the big droplets only were removed by the indenter, while the HA-2 films were delaminated on large areas as a result of wedge spallation failure.

  2. Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

    SciTech Connect

    Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy; Fernández, Félix E.

    2015-09-28

    Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between room temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.

  3. Optical, ferroelectric, and piezoresponse force microscopy studies of pulsed laser deposited Aurivillius Bi₅FeTi₃O₁₅ thin films

    SciTech Connect

    Kooriyattil, Sudheendran; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Barrionuevo, Danilo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-10-14

    Bi₅FeTi₃O₁₅ (BFTO) based Aurivillius ferroelectric thin films were fabricated on strontium ruthanate coated amorphous fused silica substrates using pulsed laser deposition technique. Optical, ferroelectric, and piezoresponse properties of these thin films were investigated. The estimated refractive index (n) and extinction coefficient (k) for these films were in the range from 2.40 to 2.59 and 0.012 to 0.19, respectively. The bandgap of the BFTO thin layers was estimated to be 2.88 eV. Domain switching and hysteresis loops of BFTO films were studied utilizing piezoresponse force microscopy (PFM). The measured apparent polarization (P{sub r}) and coercive field (E{sub c}) for the samples were 20 μC/cm² and 250 kV/cm, respectively. The amplitude and phase hysteresis curves obtained from PFM characterization reveal that these films can be switched below 5 V. These results suggest that BFTO in thin film form is a promising material for photo ferroelectric and optoelectronic devices applications.

  4. Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Ohta, Jitsuo; Kawaguchi, Yuji; Fujioka, Hiroshi

    2006-09-01

    The authors have grown Al0.1Ga0.9N films on atomically flat ZnO substrates at room temperature (RT) by pulsed laser deposition. Epitaxial growth of AlGaN at RT proceeds in the layer-by-layer mode, and the films show atomically flat stepped and terraced surfaces. On the other hand, growth at 600°C proceeds three dimensionally, and the films suffer from degradation in their crystalline quality and from rough surface morphology. These results indicate that suppression of the formation of interfacial layers between AlGaN and ZnO by reducing the growth temperature is inherently important in order to take advantage of the nearly lattice-matched ZnO substrates. They have also found that high-quality AlGaN films can be obtained under highly N-rich conditions at reduced growth temperatures, which provides a striking contrast to the case of molecular beam epitaxy.

  5. Low temperature synthesis of hierarchical TiO2 nanostructures for high performance perovskite solar cells by pulsed laser deposition

    DOE PAGESBeta

    Yang, Bin; Mahjouri-Samani, Masoud; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-06-10

    A promising way to advance perovskite solar cells is to improve the quality of the electron transport material e.g., titanium dioxide (TiO2) in a direction that increases electron transport and extraction. Although dense TiO2 films are easily grown in solution, efficient electron extraction suffers due to a lack of interfacial contact area with the perovskite. Conversely, mesoporous films do offer high surface-area-to-volume ratios, thereby promoting efficient electron extraction, but their morphology is relatively difficult to control via conventional solution synthesis methods. Here, a pulsed laser deposition method was used to assemble TiO2 nanoparticles into TiO2 hierarchical nanoarchitectures having the anatasemore » crystal structure, and prototype solar cells employing these structures yielded power conversion efficiencies of ~ 14%. Our approach demonstrates a way to grow high aspect-ratio TiO2 nanostructures for improved interfacial contact between TiO2 and perovskite materials, leading to high electron-hole pair separation and electron extraction efficiencies for superior photovoltaic performance. In addition, compared to conventional solution-processed TiO2 films that require 500 °C to obtain a good crystallinity, our relatively low temperature (300 °C) TiO2 processing method may promote reduced energy-consumption during device fabrication as well as enable compatibility with various flexible polymer substrates.« less

  6. Control of the magnetic properties of LaMnO3 epitaxial thin films grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Martinez, Benjamin; Roqueta, Jaume; Pomar, Alberto; Balcells, Lluis; Frontera, Carlos; Konstantinovic, Zorica; Sandiumenge, Felip; Santiso, Jose; Advanced materials characterization Team; Thin films growth Team

    2015-03-01

    LaMnO3 (LMO), the parent compound of colossal magnetoresistance based manganites has gained renewed attention as a building block in heterostructures with unexpected properties. In its bulk phase, stoichiometric LMO is an A-type antiferromagnetic (AFM) insulator (TN = 140K) with orthorhombic structure that easily accommodate an oxygen excess by generating cationic (La or Mn) vacancies. As a result, a fraction of Mn 3+ changes to Mn 4+ leading to a double-exchange mediated ferromagnetic (FM) behavior. In thin films the AFM phase has been elusive up to now and thin films with FM ordering are usually reported. In this work, we have systematically studied the growth process of LaMnO3 thin films by pulsed laser deposition on SrTiO3 (001) substrates under different oxygen partial pressures (PO2) . A close correlation between the structure (explored by XRD) and the magnetic properties (SQUID measurements) of the films with PO2 has been identified. At high PO2 FM behavior is observed. In contrast, at very low PO2, the results obtained for unit cell volume (close to stoichiometric bulk values) and magnetic moment (0.2 μB/Mn) strongly indicate antiferromagnetic ordering. We acknowledge financial support from the Spanish MINECO (MAT2012-33207).

  7. Microstructure and magnetic properties of La-Co substituted strontium hexaferrite films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ebrahimi, S. A. Seyyed; Ong, C. K.

    2013-09-01

    Microstructure and magnetic properties of La-Co substituted strontium hexaferrite films (Sr1-xLaxFe12-xCoxO19) fabricated by pulsed laser deposition on Si(100)/Pt(111) substrate were investigated. The coercivities of the films in perpendicular direction were higher than those in in-plane direction which confirms the perpendicular magnetic anisotropy of the films. Atomic force microscopy images of the films revealed decreasing of the plate-like grains size, from 300 to 110 nm with increasing the La-Co contents. The saturation magnetization increased slightly till x=0.2 and then decreased from x=0.2 to x=0.4. However, the coercivity increased from 2.3 kOe for the SrFe12O19 film to 4.1 kOe for the Sr0.6La0.4Fe11.6Co0.4O19 film, because of the decrease of the grain size and increase of the magnetic anisotropy field.

  8. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    NASA Astrophysics Data System (ADS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Maksimova, K. Yu.; Grunin, A. I.; Bursian, V. E.; Lutsev, L. V.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10-84 nm) epitaxial layers of Yttrium Iron Garnet Y3Fe5O12 (YIG) on (111)-oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  9. Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

    SciTech Connect

    Gbordzoe, S. Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

    2014-08-14

    The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit.

  10. 3-D matrix template-assisted growth of oriented oxide nanowire arrays using glancing angle pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wright, N.; Mateo-Feliciano, D.; Ostoski, A.; Mukherjee, P.; Witanachchi, S.

    Nanosphere lithography is a combination of different methods to nanofabrication. In this work nanosphere lithography is used to study the growth of Zinc Oxide Nano-columns (ZnO NCs) on different diameter Silica Nanosphere (SNS) self-assembled templates. ZnO NCs are promising building blocks for many existing and emerging optical, electrical, and piezoelectric devices, specifically, the seeded growth of other oxide materials. Recently, reports have shown a ferroelectric phase of zinc stannate (ZnSnO3) and while lead zirconium titanate oxide (PZT) has been the main material of interest in ferroelectric and piezoelectric applications, the toxicity of lead has been of great concern. The possibility of developing lead free piezoelectric materials is of great interest in the ferroelectric community. Langmuir-Blodgett method was used to construct a self-assembled monolayer of SNSs on silicon substrates. Oriented ZnO NCs were grown on top of the spheres using the glancing angle pulsed laser deposition technique. Columns were formed in a spatially ordered closed-packed hexagonal configuration. Growth of ZnO NCs was studied as function of ambient Oxygen pressure with SNS size ranging from 250-1000 nm. Cross-sectional Scanning Electron Microscopy and X-ray diffraction (XRD) were used to study the template structure. Relative aspect ratios were studied and showed tunability of column dimensions with sphere size. XRD revealed ZnO NC arrays were c-axis oriented with hexagonal wurtzite structure.

  11. On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

    NASA Astrophysics Data System (ADS)

    Perrière, J.; Hebert, C.; Jedrecy, N.; Seiler, W.; Zanellato, O.; Portier, X.; Perez-Casero, R.; Millon, E.; Nistor, M.

    2014-09-01

    Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic expansion dynamics of the plasma plume, which induces difficulties to grow on large scale films with homogeneous thickness and composition. The specific aspect of the crystalline or orientation uniformity has not been investigated, despite its important role on oxide films properties. In this work, the crystalline parameters and the texture of zinc oxide films are studied as a function of position with respect to the central axis of the plasma plume. We demonstrate the existence of large non-uniformities in the films. The stoichiometry, the lattice parameter, and the distribution of crystallites orientations drastically depend on the position with respect to the plume axis, i.e., on the oblique incidence of the ablated species. The origin of these non-uniformities, in particular, the unexpected tilted orientation of the ZnO c-axis may be attributed to the combined effects of the oblique incidence and of the ratio between oxygen and zinc fluxes reaching the surface of the growing film.

  12. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  13. Synthesis and modification of mesoporous silica and the preparation of molecular sieve thin films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Coutinho, Decio Heringer

    2001-07-01

    Hexagonal mesoporous DAM-1 (Dallas Amorphous Material-1) was prepared using Vitamin E TPGS as the structure-directing agent. Depending upon the temperature and gel composition, highly ordered and hydrothermally stable DAM-1 with various morphologies could be achieved including spheres, gyroids, discoid, hexagonal plates and rods. This synthesis was modified to prepare hybrid organic-inorganic amine and thiol bifunctionalized DAM-1 by direct co-condensation under acidic conditions. Patterned DAM-1 thin films were prepared on patterned transparencies utilizing pulsed laser deposition (PLD) and line patterning techniques. DAM-1 laser ablation onto the patterned substrate followed by hydrothermal treatment resulted in a densely packed film. Removal of the patterned lines by sonication revealed patterned DAM-1 films. Thin films of zeolite type X were also prepared using the PLD technique. Laser ablation of zeolite X onto TiN-coated silicon wafers followed by a hydrothermal treatment resulted in partially oriented, crystalline membranes. Hydrothermal treatment of PLD films on stainless steel mesh produced a coated wire mesh with a 3-mum thick zeolite X film. A novel strategy for imprinting mesoporous SBA-15 that combines a triblock copolymer template and a chiral ruthenium complex is reported. A chiral PEO helix was formed by the chiral ruthenium complex interaction with the block copolymer during the synthesis of SBA-15. Upon removal of the chiral ruthenium complex, a stereospecfic cavity was created. Preliminary results indicated stereoselective absorption of Delta or Λ-Ru(phen)3 2+ isomer from a racemic mixture could be achieved depending on the chirality of the PEO chain. Practicum Two. The industrial practicum report describes the process development unit (PDU) 3-pentenenitrile (3PN) refining operation. This distillation works was operated to refine crude 3PN product, which contained 3PN, 2-methyl-3-butenenitrile (2M3BN), and other byproducts. This report also

  14. Structural and optical properties of phenylalanine and tyrosine thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hernandez-Perez, M. A.; Garapon, C.; Champeaux, C.; Orlianges, J. C.

    2007-04-01

    Thin films of the amino-acids phenylalanine (Phe) and tyrosine (Tyr) were prepared by PLD with a KrF laser at fluences of some hundreds mJ/cm2. Conservation of the chemical structure and a metastable modification of the molecular interactions are evidenced by IR spectroscopy. The evolution of the refractive indices with fluence was correlated with the structure determined by X ray diffraction. Phe plume expansion imaging was achieved.

  15. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M.; Zhao, H. J.; Chen, X. M.; Bellaiche, L.

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C} = 31.8 K with a saturation magnetization of 4.2 μ{sub B} per formula unit at 10 K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ∼0.7 eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  16. Efficient CH3 NH3 PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition.

    PubMed

    Park, Jong Hoon; Seo, Jangwon; Park, Sangman; Shin, Seong Sik; Kim, Young Chan; Jeon, Nam Joong; Shin, Hee-Won; Ahn, Tae Kyu; Noh, Jun Hong; Yoon, Sung Cheol; Hwang, Cheol Seong; Seok, Sang Il

    2015-07-15

    Highly transparent and nanostructured nickel oxide (NiO) films through pulsed laser deposition are introduced for efficient CH3 NH3 PbI3 perovskite solar cells. The (111)-oriented nanostructured NiO film plays a key role in extracting holes and preventing electron leakage as hole transporting material. The champion device exhibits a power conversion efficiency of 17.3% with a very high fill factor of 0.813. PMID:26038099

  17. Growth and characterization of (Y3Fe5O12-Bi3Fe5O12) heterostructures by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Simion, B. M.; Thomas, G.; Ramesh, R.; Keramidas, V. G.; Pfeffer, R. L.

    1995-02-01

    Superlattice heterostructures consisting of alternating single crystalline ferrimagnetic yttrium-iron-garnet (YIG) and bismuth-iron-garnet (BIG) thin film layers on gadolinium-gallium-garnet substrates show an increased saturation magnetization with respect to that of the monolayered structures grown under the same conditions. The observed effect is attributed to the distortions introduced in the YIG layers by the adjacent BIG layers. In this letter, we report our growth approach, by pulsed laser deposition, of these unusually performing thin film heterostructures.

  18. Nanofabrication with Pulsed Lasers

    PubMed Central

    2010-01-01

    An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics. PMID:20672069

  19. Pulsed gas laser

    DOEpatents

    Anderson, Louis W.; Fitzsimmons, William A.

    1978-01-01

    A pulsed gas laser is constituted by Blumlein circuits wherein space metal plates function both as capacitors and transmission lines coupling high frequency oscillations to a gas filled laser tube. The tube itself is formed by spaced metal side walls which function as connections to the electrodes to provide for a high frequency, high voltage discharge in the tube to cause the gas to lase. Also shown is a spark gap switch having structural features permitting a long life.

  20. Nanoscale monoclinic domains in epitaxial SrRuO3 thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ghica, C.; Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-01

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO3 layers used as bottom electrodes in multiferroic coatings onto SrTiO3 substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO3 thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO3 orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO3 bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (-4% ÷ -5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO6 octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO3 structure.

  1. Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

    SciTech Connect

    Ghica, C. Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-14

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.

  2. Surface photovoltage spectroscopy of pulsed laser deposited undoped ZnSe/n+GaAs

    NASA Astrophysics Data System (ADS)

    Ganguli, Tapas; Kumar, Shailendra; Kukreja, L. M.; Rustagi, K. C.

    2002-03-01

    We report surface photovoltage (SPV) spectra of ZnSe thin films deposited on n+GaAs substrates in the wavelength range of 400-800 nm. In the above bandgap region of ZnSe (below 450 nm), we find that the major contribution to SPV comes from trapping and re-emission from the slow states at the ZnSe surface and ZnSe/GaAs interface. The effect of interference of light on the SPV spectra, has been analysed for subbandgap wavelength excitation of ZnSe (470-800 nm). In spite of the presence of a large number of subbandgap states in ZnSe, the major contribution to SPV in this wavelength range comes from the substrate. The difference in the magnitudes of the SPV between the bare n+GaAs and the ZnSe/n+GaAs is due to the reduction of surface recombination velocity (SRV) of the minority carriers in n+GaAs.

  3. Solid-state source of atomic oxygen for low-temperature oxidation processes: Application to pulsed laser deposition of TiO2:N films

    NASA Astrophysics Data System (ADS)

    Ojima, Daiki; Chiba, Tetsuya; Shima, Kazunari; Hiramatsu, Hidenori; Hosono, Hideo; Hayashi, Katsuro

    2012-02-01

    An atomic oxygen (AO) source has been redesigned to coordinate with a pulsed laser deposition system and used to grow nitrogen-doped TiO2 films by deposition of TiN and simultaneous irradiation of the substrate with AO. The AO source uses an incandescently heated thin tube of zirconia as an oxygen permeation media to generate pure AO of low kinetic energy. The emission flux is calibrated using a silver-coated quartz crystal microbalance. The thin shape of the probe and transverse emission geometry of this emission device allow the emission area to be positioned close to the substrate surface, enhancing the irradiation flux at the substrate. AO irradiation is crucial for formation of TiO2 phases via oxidation of the deposited TiN laser plume, and is effective for decrease of the substrate temperature for crystallization of anatase phase to as low as around 200 °C.

  4. Wear resistance of ZrC/TiN and ZrC/ZrN thin multilayers grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Dorcioman, G.; Niculaie, S.; Bourne, G.; Zhang, J.; Lambers, E.; Siebein, K.; Craciun, V.

    2013-03-01

    ZrC/TiN and ZrC/ZrN multilayers thinner than 350 nm were grown on (100) Si substrates at a temperature of 300 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser ( λ=248 nm, pulse duration τ=25 ns, 8.0 J/cm2 fluence and 40 Hz repetition rate). Cross-sectional transmission electron microscopy, Auger electron spectroscopy depth profiling and simulations of X-ray reflectivity curves indicated that there was intermixing between the deposited layers at the interfaces as well as between the first layer and the substrate. Nanoindentation investigations found hardness values between 35 and 38 GPa for the deposited multilayers. Linear unidirectional sliding wear tests were conducted using a ball-on-plate tribometer under 1 N normal force. Wear tracks were produced in a Hysitron nanoindenter with 1 μm radius diamond tip under a 500 μN load. High-resolution cross-sectional transmission electron microscopy studies of the wear tracks showed that the multilayers withstood these tests without significant damage. The results could be explained by the use of a high laser fluence during deposition that resulted in very dense and strongly adherent nanocrystalline layers.

  5. Pulsed laser deposited porous nano-carpets of indium tin oxide and their use as charge collectors in core-shell structures for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Garvey, Timothy R.; Farnum, Byron H.; Lopez, Rene

    2015-01-01

    Porous In2O3:Sn (ITO) films resembling from brush carpets to open moss-like discrete nanostructures were grown by pulsed laser deposition under low to high background gas pressures, respectively. The charge transport properties of these mesoporous substrates were probed by pulsed laser photo-current and -voltage transient measurements in N719 dye sensitized devices. Although the cyclic voltammetry and dye adsorption measurements suggest a lower proportion of electro-active dye molecules for films deposited at the high-end background gas pressures, the transient measurements indicate similar electron transport rates within the films. Solar cell operation was achieved by the deposition of a conformal TiO2 shell layer by atomic layer deposition (ALD). Much of the device improvement was shown to be due to the TiO2 shell blocking the recombination of photoelectrons with the electrolyte as recombination lifetimes increased drastically from a few seconds in uncoated ITO to over 50 minutes in the ITO with a TiO2 shell layer. Additionally, an order of magnitude increase in the electron transport rate in ITO/TiO2 (core/shell) films was observed, giving the core-shell structure a superior ratio of recombination/transport times.Porous In2O3:Sn (ITO) films resembling from brush carpets to open moss-like discrete nanostructures were grown by pulsed laser deposition under low to high background gas pressures, respectively. The charge transport properties of these mesoporous substrates were probed by pulsed laser photo-current and -voltage transient measurements in N719 dye sensitized devices. Although the cyclic voltammetry and dye adsorption measurements suggest a lower proportion of electro-active dye molecules for films deposited at the high-end background gas pressures, the transient measurements indicate similar electron transport rates within the films. Solar cell operation was achieved by the deposition of a conformal TiO2 shell layer by atomic layer deposition (ALD). Much

  6. Pulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters

    NASA Astrophysics Data System (ADS)

    Suryawanshi, Sachin R.; Singh, Anil K.; Phase, Deodatta M.; Late, Dattatray J.; Sinha, Sucharita; More, Mahendra A.

    2016-10-01

    Gadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure ~10-8 mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/cm2 at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler-Nordheim ( F- N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor ( β) estimated using the slopes of the F- N plots indicate that the PLD GdB6 coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.

  7. Stimulation of osteogenic and angiogenic ability of cells on polymers by pulsed laser deposition of uniform akermanite-glass nanolayer.

    PubMed

    Wu, Chengtie; Zhai, Dong; Ma, Hongshi; Li, Xiaomin; Zhang, Yali; Zhou, Yinghong; Luo, Yongxiang; Wang, Yueyue; Xiao, Yin; Chang, Jiang

    2014-07-01

    Polymer biomaterials have been widely used for bone replacement/regeneration because of their unique mechanical properties and workability. Their inherent low bioactivity makes them lack osseointegration with host bone tissue. For this reason, bioactive inorganic particles have been always incorporated into the matrix of polymers to improve their bioactivity. However, mixing inorganic particles with polymers always results in inhomogeneity of particle distribution in polymer matrix with limited bioactivity. This study sets out to apply the pulsed laser deposition (PLD) technique to prepare uniform akermanite (Ca2MgSi2O7, AKT) glass nanocoatings on the surface of two polymers (non-degradable polysulfone (PSU) and degradable polylactic acid (PDLLA)) in order to improve their surface osteogenic and angiogenic activity. The results show that a uniform nanolayer composed of amorphous AKT particles (∼30 nm) of thickness 130 nm forms on the surface of both PSU and PDLLA films with the PLD technique. The prepared AKT-PSU and AKT-PDLLA films significantly improved the surface roughness, hydrophilicity, hardness and apatite mineralization, compared with pure PSU and PDLLA, respectively. The prepared AKT nanocoatings distinctively enhance the alkaline phosphate (ALP) activity and bone-related gene expression (ALP, OCN, OPN and Col I) of bone-forming cells on both PSU and PDLLA films. Furthermore, AKT nanocoatings on two polymers improve the attachment, proliferation, VEGF secretion and expression of proangiogenic factors and their receptors of human umbilical vein endothelial cells (HUVEC). The results suggest that PLD-prepared bioceramic nanocoatings are very useful for enhancing the physicochemical, osteogenic and angiogenic properties of both degradable and non-degradable polymers for application in bone replacement/regeneration. PMID:24726444

  8. Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

    SciTech Connect

    Shibuya, Keisuke Sawa, Akihito

    2015-10-15

    We systematically examined the effects of the substrate temperature (T{sub S}) and the oxygen pressure (P{sub O2}) on the structural and optical properties polycrystalline V O{sub 2} films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O{sub 2} phase was formed at a T{sub S} ≥ 450 °C at P{sub O2} values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O{sub 2} films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O{sub 2} on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O{sub 2} films grown at a T{sub S} of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the T{sub S} and P{sub O2}, and was maximal for a V O{sub 2} film grown at 450 °C under 20 mTorr. Based on the results, we derived the P{sub O2} versus 1/T{sub S} phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O{sub 2} films on silicon platforms.

  9. Stimulation of osteogenic and angiogenic ability of cells on polymers by pulsed laser deposition of uniform akermanite-glass nanolayer.

    PubMed

    Wu, Chengtie; Zhai, Dong; Ma, Hongshi; Li, Xiaomin; Zhang, Yali; Zhou, Yinghong; Luo, Yongxiang; Wang, Yueyue; Xiao, Yin; Chang, Jiang

    2014-07-01

    Polymer biomaterials have been widely used for bone replacement/regeneration because of their unique mechanical properties and workability. Their inherent low bioactivity makes them lack osseointegration with host bone tissue. For this reason, bioactive inorganic particles have been always incorporated into the matrix of polymers to improve their bioactivity. However, mixing inorganic particles with polymers always results in inhomogeneity of particle distribution in polymer matrix with limited bioactivity. This study sets out to apply the pulsed laser deposition (PLD) technique to prepare uniform akermanite (Ca2MgSi2O7, AKT) glass nanocoatings on the surface of two polymers (non-degradable polysulfone (PSU) and degradable polylactic acid (PDLLA)) in order to improve their surface osteogenic and angiogenic activity. The results show that a uniform nanolayer composed of amorphous AKT particles (∼30 nm) of thickness 130 nm forms on the surface of both PSU and PDLLA films with the PLD technique. The prepared AKT-PSU and AKT-PDLLA films significantly improved the surface roughness, hydrophilicity, hardness and apatite mineralization, compared with pure PSU and PDLLA, respectively. The prepared AKT nanocoatings distinctively enhance the alkaline phosphate (ALP) activity and bone-related gene expression (ALP, OCN, OPN and Col I) of bone-forming cells on both PSU and PDLLA films. Furthermore, AKT nanocoatings on two polymers improve the attachment, proliferation, VEGF secretion and expression of proangiogenic factors and their receptors of human umbilical vein endothelial cells (HUVEC). The results suggest that PLD-prepared bioceramic nanocoatings are very useful for enhancing the physicochemical, osteogenic and angiogenic properties of both degradable and non-degradable polymers for application in bone replacement/regeneration.

  10. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  11. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  12. Laser pulse sampler

    DOEpatents

    Vann, C.

    1998-03-24

    The Laser Pulse Sampler (LPS) measures temporal pulse shape without the problems of a streak camera. Unlike the streak camera, the laser pulse directly illuminates a camera in the LPS, i.e., no additional equipment or energy conversions are required. The LPS has several advantages over streak cameras. The dynamic range of the LPS is limited only by the range of its camera, which for a cooled camera can be as high as 16 bits, i.e., 65,536. The LPS costs less because there are fewer components, and those components can be mass produced. The LPS is easier to calibrate and maintain because there is only one energy conversion, i.e., photons to electrons, in the camera. 5 figs.

  13. Laser pulse sampler

    DOEpatents

    Vann, Charles

    1998-01-01

    The Laser Pulse Sampler (LPS) measures temporal pulse shape without the problems of a streak camera. Unlike the streak camera, the laser pulse directly illuminates a camera in the LPS, i.e., no additional equipment or energy conversions are required. The LPS has several advantages over streak cameras. The dynamic range of the LPS is limited only by the range of its camera, which for a cooled camera can be as high as 16 bits, i.e., 65,536. The LPS costs less because there are fewer components, and those components can be mass produced. The LPS is easier to calibrate and maintain because there is only one energy conversion, i.e., photons to electrons, in the camera.

  14. Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

    NASA Astrophysics Data System (ADS)

    Hullavarad, S. S.; Vispute, R. D.; Nagaraj, B.; Kulkarni, V. N.; Dhar, S.; Venkatesan, T.; Jones, K. A.; Derenge, M.; Zheleva, T.; Ervin, M. H.; Lelis, A.; Scozzie, C. J.; Habersat, D.; Wickenden, A. E.; Currano, L. J.; Dubey, M.

    2006-04-01

    In this paper we report recent advances in pulsed-laser-deposited AIN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO2/Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/SiO2/Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5-0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited

  15. Laser pulse detector

    DOEpatents

    Mashburn, Douglas N.; Akerman, M. Alfred

    1981-01-01

    A laser pulse detector is provided which is small and inexpensive and has the capability of detecting laser light of any wavelength with fast response (less than 5 nanoseconds rise time). The laser beam is focused onto the receiving end of a graphite rod coaxially mounted within a close-fitting conductive, open-end cylindrical housing so that ablation and electric field breakdown of the resulting plasma occurs due to a bias potential applied between the graphite rod and housing. The pulse produced by the breakdown is transmitted through a matched impedance coaxial cable to a recording device. The cable is connected with its central lead to the graphite rod and its outer conductor to the housing.

  16. Laser pulse detector

    DOEpatents

    Mashburn, D.N.; Akerman, M.A.

    1979-08-13

    A laser pulse detector is provided which is small and inexpensive and has the capability of detecting laser light of any wavelength with fast response (less than 5 nanoseconds rise time). The laser beam is focused onto the receiving end of a graphite rod coaxially mounted within a close-fitting conductive, open-end cylindrical housing so that ablation and electric field breakdown of the resulting plasma occurs due to a bias potential applied between the graphite rod and housing. The pulse produced by the breakdown is transmitted through a matched impedance coaxial cable to a recording device. The cable is connected with its central lead to the graphite rod and its outer conductor to the housing.

  17. Surface Chemistry, Friction, and Wear Properties of Untreated and Laser-Annealed Surfaces of Pulsed-Laser-Deposited WS(sub 2) Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wheeler, Donald R.; Zabinski, Jeffrey S.

    1996-01-01

    An investigation was conducted to examine the surface chemistry, friction, and wear behavior of untreated and annealed tungsten disulfide (WS2) coatings in sliding contact with a 6-mm-diameter 440C stainless-steel ball. The WS2 coatings and annealing were performed using the pulsed-laser-deposition technique. All sliding friction experiments were conducted with a load of 0.98 N (100 g), an average Hertzian contact pressure of 0.44 GPa, and a constant rotating speed of 120 rpm. The sliding velocity ranged from 31 to 107 mm/s because of the range of wear track radii involved in the experiments. The experiment was performed at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7X(exp -10) Pa), dry nitrogen (relative humidity, less than 1 percent), and humid air (relative humidity, 15 to 40 percent). Analytical techniques, including scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), x-ray photo electron spectroscopy (XPS), surface profilometry, and Vickers hardness testing, were used to characterize the tribological surfaces of WS2 coatings. The results of the investigation indicate that the laser annealing decreased the wear of a WS2 coating in an ultrahigh vacuum. The wear rate was reduced by a factor of 30. Thus, the laser annealing increased the wear life and resistance of the WS2 coating. The annealed WS 2 coating had a low coefficient of friction (less than O.1) and a low wear rate ((10(exp -7) mm(exp 3)/N-m)) both of which are favorable in an ultrahigh vacuum.

  18. Multiple pulse laser

    SciTech Connect

    Hughes, R.S.; Jernigan, J.L.

    1981-02-10

    A multiple pulse laser from a single resonant cavity is disclosed. An acousto-optic cell is used to modulate coherent light from a lasing element. Either multiple chirp signals or a masked mirror are used to provide distinct pulses of light. Through proper choice of materials for the acousto-optic cell and use of divergent optics, a higher power level is obtained. Use of a multi-tapped delay line permits a shorter period between pulses due to the linear superposition principle. When the mask embodiment is used, the acousto-optic cell focuses light which scans across the mask. Whenever the focused light passes through the mask, lasing occurs which generates an output pulse.

  19. Pulsed Laser Deposition of BaCe(sub 0.85)Y(sub 0.15)0(sub 3) FILMS

    NASA Technical Reports Server (NTRS)

    Dynys, F. W.; Sayir, A.

    2006-01-01

    Pulsed laser deposition has been used to grow nanostructured BaCe(sub 0.85)Y(sub 0.15)0(sub 3) films. The objective is to enhance protonic conduction by reduction of membrane thickness. Sintered samples and laser targets were prepared by sintering BaCe(sub 0.85)Y(sub 0.15)O(sub 3) powders derived by solid state synthesis. Films 2 to 6 m thick were deposited by KrF excimer laser on Si and porous Al2O3 substrates. Nanocrystalline films were fabricated at deposition temperatures of 600-800 C deg at O2 pressure of 30 mTorr and laser fluence of 1.2 J/cm square. Films were characterized by x-ray diffraction, scanning electron microscopy and electrical impedance spectroscopy. Dense single phase BaCe(sub 0.85)Y((sub 0.15) 0(sub 3) films with a columnar growth morphology is observed, preferred crystal growth was found to be dependent upon deposition temperature and substrate type. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C deg to 900 C deg in moist argon. Electrical conduction of the fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples. With respect to the film growth direction, activation energy for electrical conduction is 3 times higher in the perpendicular direction than the parallel direction.

  20. Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Luna, L. Molina; Hopkins, P. E.

    2015-06-01

    We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire () substrates at various deposition temperatures ( to ). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration () of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at.

  1. SrFeO amorphous underlayer for fabrication of c-axis perpendicularly orientated strontium hexaferrite films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ong, C. K.

    2013-09-01

    A thin amorphous SrFeO underlayer on Si(100) substrate was pulse laser deposited as an underlayer for the growth of c-axis perpendicularly oriented strontium hexaferrite (SrFe12O19) films. The amorphous SrFeO underlayer was deposited at different temperatures in the range from room temperature to 700 °C, while the SrFe12O19 film was deposited at 700 °C. The SrFe12O19 films exhibited slightly perpendicular magnetic anisotropy by the rather higher coercivities in perpendicular direction (Hc⊥) than those for the in-plane direction (Hc||), due to the c-axis perpendicular orientation. The magnetization and coercivities of the SrFe12O19 film increase, but the magnetic anisotropy (ΔHc=Hc⊥-Hc||) increases firstly and then decreases, as the SrFeO underlayer deposition temperature increases.

  2. Pulsed-laser deposition and growth studies of Bi{sub 3}Fe{sub 5}O{sub 12} thin films

    SciTech Connect

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-12-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi{sub 3}Fe{sub 5}O{sub 12} (BIG) thin films on (100) and (111) Gd{sub 3}Ga{sub 5}O{sub 12} substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films.

  3. Pulsed laser deposited porous nano-carpets of indium tin oxide and their use as charge collectors in core-shell structures for dye sensitized solar cells.

    PubMed

    Garvey, Timothy R; Farnum, Byron H; Lopez, Rene

    2015-02-14

    Porous In2O3:Sn (ITO) films resembling from brush carpets to open moss-like discrete nanostructures were grown by pulsed laser deposition under low to high background gas pressures, respectively. The charge transport properties of these mesoporous substrates were probed by pulsed laser photo-current and -voltage transient measurements in N719 dye sensitized devices. Although the cyclic voltammetry and dye adsorption measurements suggest a lower proportion of electro-active dye molecules for films deposited at the high-end background gas pressures, the transient measurements indicate similar electron transport rates within the films. Solar cell operation was achieved by the deposition of a conformal TiO2 shell layer by atomic layer deposition (ALD). Much of the device improvement was shown to be due to the TiO2 shell blocking the recombination of photoelectrons with the electrolyte as recombination lifetimes increased drastically from a few seconds in uncoated ITO to over 50 minutes in the ITO with a TiO2 shell layer. Additionally, an order of magnitude increase in the electron transport rate in ITO/TiO2 (core/shell) films was observed, giving the core-shell structure a superior ratio of recombination/transport times.

  4. Double pulse laser deposition of polymer nanocomposite: NaYF4:Tm3+,Yb3+ films for optical sensors and light emitting applications

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Wilson, Simeon; Sarkisov, Sergey; Patel, Darayas

    2013-09-01

    The main objective of this paper is to demonstrate the feasibility of producing operationally Nanocomposite polymeric thin films for sensor and light emitting applications using the innovative modified double pulsed laser deposition (DPLD) technique. The existing PLD vacuum chamber was modified to accommodate multiple wavelength laser beams for in-situ-double-ablation/Deposition (DPLD) of multiple targets of host and dopants. Special design was made for cooling of the target to the threshold of the polymer ablation without interrupting the continuity of the ablation process. Multilayered of nanocomposites of acrylic polymers and nanoparticles of NaYF4:Tm3+ ,Yb3+ are fabricated using ultra-violet (UV) radiation (355 nm) ablating polymer targets and near-infra-red (near-IR) radiation (1064 nm) ablating inorganic targets. The films were characterized using the reflected high energy electron diffraction (RHEED), XRD , XRF, AFM, and FTIR absorption spectroscopy and tested as possible chemical sensors and light emitters.

  5. Pulsed laser deposition of hydroxyapatite thin films on Ti-5Al-2.5Fe substrates with and without buffer layers

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Ristoscu, C.; Chiritescu, C.; Ghica, C.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Cornet, A.

    2000-12-01

    We present a method for processing hydroxyapatite (HA) thin films on Ti-5Al-2.5Fe substrates. The films were grown by pulsed laser deposition (PLD) in vacuum at room temperature, using a KrF∗ excimer laser. The amorphous as-deposited HA films were recrystallized in ambient air by a thermal treatment at 550°C. The best results have been obtained when inserting a buffer layer of ceramic materials (TiN, ZrO2 or Al2O3). The films were characterized by complementary techniques: grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), cross-section transmission electron microscopy (XTEM), SAED, energy dispersive X-ray spectroscopy (EDS) and nanoindentation. The samples with buffer interlayer preserve the stoichiometry are completely recrystallized and present better mechanical characteristics as compared with that without buffer interlayer.

  6. Pulsed laser deposition of Y3Fe5O12 and Bi3Fe5O12 films on garnet substrates

    NASA Astrophysics Data System (ADS)

    Kahl, S.; Grishin, A. M.

    2003-05-01

    We prepared Y3Fe5O12 (YIG) and Bi3Fe5O12 (BIG) films by pulsed laser deposition and present some practical aspects here. Low laser repetition rates result in a loss of oxygen and reduce the saturation magnetization of YIG by a factor of 5. Small changes of deposition conditions and lattice match for BIG films have little influence on the spectra of Faraday rotation but change magnetic coercivities by a factor of 10. Thin BIG films show higher coercivities than thick films. Coercivities increase with lattice mismatch between film and substrate. The wavelength of maximum Faraday rotation for BIG films in visible light depends on film thickness: We observed a redshift of almost 40 nm for a 2.6 μm thick film as compared to a 470 nm thick film.

  7. Photoelectrocatalytic degradation of carbamazepine using Ti/TiO2 nanostructured electrodes deposited by means of a pulsed laser deposition process.

    PubMed

    Daghrir, R; Drogui, P; Dimboukou-Mpira, A; El Khakani, M A

    2013-11-01

    The objective of the present work is to evaluate the potential of photoelectrocatalytic oxidation (PECO) process using Ti/TiO2 for the degradation of carbamazepine (CBZ). Ti/TiO2 prepared by pulsed laser deposition (PLD) has been used as a photo-catalyst in a photoelectrocatalytic cell. The PLD TiO2 coatings were found to be of anatase structure consisting of nanocrystallites of approximately 15nm in diameter. Factorial and central and extreme composite design methodologies were successively employed to define the optimal operating conditions for CBZ degradation. Several factors such as current intensity, treatment time, pollutant concentration and cathode material were investigated. Using a 2(4) factorial matrix, the best performance for CBZ degradation (53.5%) was obtained at a current intensity of 0.1 A during 120min of treatment time and when the vitreous carbon (VC) was used at the cathode in the presence of 10mgL(-1) of CBZ. Treatment time and pollutant concentration were found to be very meaningful for CBZ removal. The PECO process applied under optimal conditions (at current intensity of 0.3A during 120min in the presence of 10mgL(-1) of CBZ with VC at the cathode) is able to oxidize around 73.5% ±2.8% of CBZ and to ensure 21.2%±7.7% of mineralization. During PECO process, CBZ was mainly transformed to acridine and anthranilic acid. Microtox biotests (Vibrio fisheri) showed that the treated - effluent was not toxic. The pseudo-second order kinetic model (k2=6×10(-4)Lmg(-1)min(-1)) described very well the oxidation of CBZ.

  8. Photoelectrocatalytic degradation of carbamazepine using Ti/TiO2 nanostructured electrodes deposited by means of a pulsed laser deposition process.

    PubMed

    Daghrir, R; Drogui, P; Dimboukou-Mpira, A; El Khakani, M A

    2013-11-01

    The objective of the present work is to evaluate the potential of photoelectrocatalytic oxidation (PECO) process using Ti/TiO2 for the degradation of carbamazepine (CBZ). Ti/TiO2 prepared by pulsed laser deposition (PLD) has been used as a photo-catalyst in a photoelectrocatalytic cell. The PLD TiO2 coatings were found to be of anatase structure consisting of nanocrystallites of approximately 15nm in diameter. Factorial and central and extreme composite design methodologies were successively employed to define the optimal operating conditions for CBZ degradation. Several factors such as current intensity, treatment time, pollutant concentration and cathode material were investigated. Using a 2(4) factorial matrix, the best performance for CBZ degradation (53.5%) was obtained at a current intensity of 0.1 A during 120min of treatment time and when the vitreous carbon (VC) was used at the cathode in the presence of 10mgL(-1) of CBZ. Treatment time and pollutant concentration were found to be very meaningful for CBZ removal. The PECO process applied under optimal conditions (at current intensity of 0.3A during 120min in the presence of 10mgL(-1) of CBZ with VC at the cathode) is able to oxidize around 73.5% ±2.8% of CBZ and to ensure 21.2%±7.7% of mineralization. During PECO process, CBZ was mainly transformed to acridine and anthranilic acid. Microtox biotests (Vibrio fisheri) showed that the treated - effluent was not toxic. The pseudo-second order kinetic model (k2=6×10(-4)Lmg(-1)min(-1)) described very well the oxidation of CBZ. PMID:24144463

  9. Pulsed Laser Deposition of Thin Films of Binary Compounds of Gd and Si using Femto-Second Laser

    NASA Astrophysics Data System (ADS)

    Hadimani, Ravi; Mudryk, Yaroslav; Prost, Timothy; Pecharsky, Vitalij; Gschneidner, Karl; Jiles, David

    2014-03-01

    Growth of thin films of Gd5(SixGe1-x)4 has not been reported widely because of difficulty in obtaining the monoclinic phase that is responsible for the giant magnetocaloric effect. Our previous attempt resulted in multiple phases of the material in the film including oxides of Gd. In this work, we therefore report growth of thin films of binary compounds of Gd and Si with Pt protection on top to prevent the oxidation. We have used femto-second laser that results in finer particle size and a composition closer to the target. Microstructure analysis using SEM, EDS was carried out to determine the film thickness, morphology and composition. Magnetic moment vs. temperature measurements were carried out at an applied field of 1000 Oe. The sample showed a major transition below 150 K and a minor transition around 335 K similar to the bulk sample. Magnetization measurements showed that the magnetization in the film saturated close to a field of 5kOe (0.397MA/m). References: This work was supported by the Barbara and James Palmer Endowment at the Department of Electrical and Computer Engineering, Iowa State University.

  10. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  11. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  12. Adjusting island density and morphology of the SrTiO3(110)-(4 × 1) surface: Pulsed laser deposition combined with scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Gerhold, Stefan; Riva, Michele; Yildiz, Bilge; Schmid, Michael; Diebold, Ulrike

    2016-09-01

    The first stages of homoepitaxial growth of the (4 × 1) reconstructed surface of SrTiO3(110) are probed by a combination of pulsed laser deposition (PLD) with in-situ reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Considerations of interfacing high-pressure PLD growth with ultra-high-vacuum surface characterization methods are discussed, and the experimental setup and procedures are described in detail. The relation between RHEED intensity oscillations and ideal layer-by-layer growth is confirmed by analysis of STM images acquired after deposition of sub-monolayer amounts of SrTiO3. For a quantitative agreement between RHEED and STM results one has to take into account two interfaces: the steps at the circumference of islands, as well as the borders between two different reconstruction phases on the islands themselves. Analysis of STM images acquired after one single laser shot reveals an exponential decrease of the island density with increasing substrate temperature. This behavior is also directly visible from the temperature dependence of the relaxation times of the RHEED intensity. Moreover, the aspect ratio of islands changes considerably with temperature. The growth mode depends on the laser pulse repetition rate, and can be tuned from predominantly layer-by-layer to the step-flow growth regime.

  13. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

    NASA Astrophysics Data System (ADS)

    Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Wang, Haiyan

    2015-11-01

    Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of group III-nitrides on thermally active substrates at low temperature. The precursors generated from the pulsed laser ablating the target has enough kinetic energy when arriving at substrates, thereby effectively suppressing the interfacial reactions between the epitaxial films and the substrates, and eventually makes the film growth at low temperature possible. So far, high-quality group III-nitride epitaxial films have been successfully grown on a variety of thermally active substrates by PLD. By combining PLD with other technologies such as laser rastering technique, molecular beam epitaxy (MBE), and metal-organic chemical vapor deposition (MOCVD), III-nitride-based light-emitting diode (LED) structures have been realized on different thermally active substrates, with high-performance LED devices being demonstrated. This review focuses on the epitaxial growth of group III-nitrides on thermally active substrates by PLD and their use in the development of LED devices. The surface morphology, interfacial property between film and substrate, and crystalline quality of as-grown group III-nitride films by PLD, are systematically reviewed. The corresponding solutions for film homogeneity on large size substrates, defect control, and InGaN films growth by PLD are also discussed in depth, together with introductions to some newly developed technologies for PLD in order to realize LED structures, which provides great opportunities for commercialization of LEDs on thermally active substrates.

  14. The effect of argon gas pressure on structural, morphological and photoluminescence properties of pulsed laser deposited KY3F10:Ho3+ thin films

    NASA Astrophysics Data System (ADS)

    Debelo, N. G.; Dejene, F. B.; Roro, Kittessa; Pricilla, M. P.; Oliphant, Clive

    2016-06-01

    KY3F10:Ho3+ thin films were deposited by a pulsed laser deposition technique with Nd-YAG laser radiation ( λ = 266 nm) on (100) silicon substrate. The XRD and FE-SEM results show improved crystalline structure for the film deposited at a pressure of 1 Torr. The AFM results show that the RMS roughness of the films increases with rise in argon gas pressure. The EDS elemental mapping shows Y-excess for all the films deposited under all pressures, and this is attributed to its higher mass and low volatility as compared to K and F. XPS analysis further confirmed Y-excess in the deposited films. Green PL emission at 540 nm was investigated at three main excitation wavelengths, namely 362, 416 and 454 nm. The PL emission peaks increase with rise in background argon gas pressure for all excitation wavelengths. The highest PL intensity occurred at excitation of 454 nm for all the thin films. In addition, faint red (near infrared) emission was observed at 750 nm for all the excitations. The green emission at 540 nm is ascribed to the 5F4-5I8 and 5S2-5I8 transitions, and the faint red emission at 750 nm is due to the 5F4-5I7 and 5S2-5I7 transitions of Ho3+.

  15. Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    NASA Astrophysics Data System (ADS)

    Matei, Andreea; Marinescu, Maria; Constantinescu, Catalin; Ion, Valentin; Mitu, Bogdana; Ionita, Iulian; Dinescu, Maria; Emandi, Ana

    2016-06-01

    We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm2. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60-100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films' thickness.

  16. Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nichols, J.; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-03-01

    We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

  17. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

    NASA Astrophysics Data System (ADS)

    Patil, Ranjit A.; Wei, Mao-Kuo; Yeh, P.-H.; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-01

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes

  18. Laser beam pulse formatting method

    DOEpatents

    Daly, T.P.; Moses, E.I.; Patterson, R.W.; Sawicki, R.H.

    1994-08-09

    A method for formatting a laser beam pulse using one or more delay loops is disclosed. The delay loops have a partially reflective beam splitter and a plurality of highly reflective mirrors arranged such that the laser beam pulse enters into the delay loop through the beam splitter and circulates therein along a delay loop length defined by the mirrors. As the laser beam pulse circulates within the delay loop a portion thereof is emitted upon each completed circuit when the laser beam pulse strikes the beam splitter. The laser beam pulse is thereby formatted into a plurality of sub-pulses. The delay loops are used in combination to produce complex waveforms by combining the sub-pulses using additive waveform synthesis. 8 figs.

  19. Laser beam pulse formatting method

    DOEpatents

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  20. Pulsed laser irradiation of metal multilayers.

    SciTech Connect

    Adams, David Price; McDonald, Joel Patrick

    2010-11-01

    Vapor-deposited, exothermic metal-metal multilayer foils are an ideal class of materials for detailed investigations of pulsed laser-ignited chemical reactions. Created in a pristine vacuum environment by sputter deposition, these high purity materials have well-defined reactant layer thicknesses between 1 and 1000 nm, minimal void density and intimate contact between layers. Provided that layer thicknesses are made small, some reactive metal-metal multilayer foils can be ignited at a point by laser irradiation and exhibit subsequent high-temperature, self-propagating synthesis. With this presentation, we describe the pulsed laser-induced ignition characteristics of a single multilayer system (equiatomic Al/Pt) that exhibits self-propagating synthesis. We show that the thresholds for ignition are dependent on (i) multilayer design and (ii) laser pulse duration. With regard to multilayer design effects on ignition, there is a large range of multilayer periodicity over which ignition threshold decreases as layer thicknesses are made small. We attribute this trend of decreased ignition threshold to reduced mass transport diffusion lengths required for rapid exothermic mixing. With regard to pulse duration effects, we have determined how ignition threshold of a single Al/Pt multilayer varies with pulse duration from 10{sup -2} to {approx} 10{sup -13} sec (wavelength and spot size are held constant). A higher laser fluence is required for ignition when using a single laser pulse {approx} 100 fs or 1 ps compared with nanosecond or microsecond exposure, and we attribute this, in part, to the effects of reactive material being ablated when using the shorter pulse durations. To further understand these trends and other pulsed laser-based processes, our discussion concludes with an analysis of the heat-affected depths in multilayers as a function of pulse duration.

  1. Micro pulse laser radar

    NASA Technical Reports Server (NTRS)

    Spinhirne, James D. (Inventor)

    1993-01-01

    An eye safe, compact, solid state lidar for profiling atmospheric cloud and aerosol scattering is disclosed. The transmitter of the micro pulse lidar is a diode pumped micro-J pulse energy, high repetition rate Nd:YLF laser. Eye safety is obtained through beam expansion. The receiver employs a photon counting solid state Geiger mode avalanche photodiode detector. Data acquisition is by a single card multichannel scaler. Daytime background induced quantum noise is controlled by a narrow receiver field-of-view and a narrow bandwidth temperature controlled interference filter. Dynamic range of the signal is limited to optical geometric signal compression. Signal simulations and initial atmospheric measurements indicate that micropulse lider systems are capable of detecting and profiling all significant cloud and aerosol scattering through the troposphere and into the stratosphere. The intended applications are scientific studies and environmental monitoring which require full time, unattended measurements of the cloud and aerosol height structure.

  2. Training Ultrafast Laser Pulses

    NASA Astrophysics Data System (ADS)

    Averin, Ruslan; Wells, N.; Todt, M.; Smolnisky, N.; Jastram, N.; Jochim, B.; Gregerson, N.; Wells, E.; Sayler, A.; McKenna, J.; Carnes, K.; Ben-Itzhak, I.; Kling, M. F.

    2009-11-01

    Closed loop control of molecular processes utilizing shaped ultrafast laser pulses has been around for a number of years, yet this type of control has primarily utilized Time of Flight ion yield data for feedback. We present experiments using Velocity Map Imaging (VMI) as the feedback source for the closed loop control. Using VMI allows for pulse optimization not only with respect to the disassociation species but also angular information of the final state. We demonstrate the feasibility of incorporating this kind of feedback into the control loop. Using this technique, we controlled the dissociation branching ratio of CO^+ into C^+ +O or C ^+O^+ and used the VMI information to recover additional information about the control mechanism.

  3. Nature Of Pulsed Laser Deposition Technique And In-Situ Processing Of YBa2Cu3O7 Superconducting Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Rajiv K.; Tiwari, P.; Narayan, Jagdish

    1990-03-01

    The deposition characteristics of YBa2Cu3O7 thin films formed by pulsed laser evaporation (PLE) method have been found to be significantly different from films obtained by other vaporization methods primarily because of very high evaporation flux which absorbs the incoming laser irradiation. Based on the experimentally obtained deposition characteristics, the physics of the PLE process is analyzed, and a hydrodynamic gas expansion model is proposed for the PLE process. In this model, the laser generated partially ionized plasma, initially under high temperature and pressure, expands anisotropically into vacuum. The plasma expansion characteristics determine the nature of the deposition process. Solutions governing the plasma expansion are obtained, and the calculated deposition characteristics are compared with results obtained on PLE deposited YBa2Cu3O7 films on silicon substrates. This model is able to explain most of the salient features of the pulsed laser deposition technique. The non-equilibrium nature of the PLE technique has been utilized for in-situ fabrication of superconducting YBa2Cu3O7 thin films on (100) SrTiO3, (100) YS-ZrO2, and (100) LaA1O3 substrates in the temperature range of 500-650°C. A positively biased ring between the substrate and the target has been found to reduce the processing temperatures to 500°C, although the epitaxial quality of the films deteriorated considerably below 550°C. The films formed on lattice matched SrTiO3 and LaA1O3 substrates are virtually defect-free with minimum channeling yields values equal to the single crystal value. Critical current densities values over 6.0 x 106 amps/cm2 (at 77 K and zero magnetic field) were obtained for epitaxial silver doped films YBa2Cu3O7 films on (100) LaA1O3 substrates. The effect of the processing parameters on the superconducting properties and microstructure of thin films is discussed in detail.

  4. Modeling of single pulse 3-D energy deposition profiles inside dielectrics upon fs laser irradiation with complex beam wavefronts

    NASA Astrophysics Data System (ADS)

    Hoyo, J.; Galván-Sosa, M.; Ruiz de la Cruz, A.; Grace, E. J.; Ferrer, A.; Siegel, J.; Solis, J.

    2014-05-01

    Nonlinear laser processing of dielectrics with ultrafast lasers has been extensively studied over the last years and successfully applied to the production of photonics and micro-fluidic devices. Still, problems related to the presence of strong optical nonlinearities make it difficult to optimize the spatial intensity distribution in the focal region (SIDFR) in some cases. Methods providing a rapid estimate of the latter, even approximately, can be of great help for optimizing processing strategies and in other applications conditioned by nonlinear propagation like spatial soliton shaping. We have developed a numerical method for estimating the SIDFR inside a dielectric material, considering nonlinear absorption, nonlinear refraction and spherical aberration for laser beams with arbitrarily shaped wavefront. It is based on a generalized adaptive fast-Fourier evolver and has been successfully tested for flat wavefronts in subsurface processing. In this work we demonstrate its applicability to complex wavefronts, like those that can be generated with spatial light modulators (SLM). For this purpose the beam wavefront is described using Zernike polynomials before being propagated inside the material for different depths, pulse parameters. The results obtained show that under certain conditions, nonlinearities can be not only controlled and pre-compensated but also exploited for producing tailored SIDFRs.

  5. Cantilever stress measurements for pulsed laser deposition of perovskite oxides at 1000 K in an oxygen partial pressure of 10{sup −4} millibars

    SciTech Connect

    Premper, J.; Sander, D.; Kirschner, J.

    2015-03-15

    An in situ stress measurement setup using an optical 2-beam curvature technique is described which is compatible with the stringent growth conditions of pulsed laser deposition (PLD) of perovskite oxides, which involves high substrate temperatures of 1000 K and oxygen partial pressures of up to 1 × 10{sup −4} millibars. The stress measurements are complemented by medium energy electron diffraction (MEED), Auger electron spectroscopy, and additional growth rate monitoring by a quartz microbalance. A shielded filament is used to allow for simultaneous stress and MEED measurements at high substrate temperatures. A computer-controlled mirror scans an excimer laser beam over a stationary PLD target. This avoids mechanical noise originating from rotating PLD targets, and the setup does not suffer from limited lifetime issues of ultra high vacuum (UHV) rotary feedthroughs.

  6. Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Golalikhani, M.; Lei, Q. Y.; Wolak, M. A.; Davidson, B. A.; Xi, X. X.

    2016-06-01

    We study the structure and surface morphology of the 100 nm homoepitaxial LaAlO3 films grown by pulsed laser deposition in a broad range of growth parameters. We show that there is a narrow window of growth conditions in which the stoichiometric, bulk-like structure is obtained while maintaining a 2-dimensional (2D) layer-by-layer growth mode. In our system, these optimum growth conditions are 100 mTorr background pressure with laser energy density 1.5-2 J/cm2. The sensitivity to growth conditions of the stoichiometry and structure of LaAlO3 films can have a crucial role in the 2-D electron gas formed at the LaAlO3/SrTiO3 interface.

  7. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

    SciTech Connect

    Devi, Vanita; Kumar, Ravindra; Joshi, B. C.; Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2015-06-14

    The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.

  8. Poly-(3-hexylthiophene)/[6,6]-phenyl-C61-butyric-acid-methyl-ester bilayer deposition by matrix-assisted pulsed laser evaporation for organic photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Caricato, A. P.; Cesaria, M.; Gigli, G.; Loiudice, A.; Luches, A.; Martino, M.; Resta, V.; Rizzo, A.; Taurino, A.

    2012-02-01

    A poly-(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM) bilayer structure has been realized by single step matrix-assisted pulsed laser evaporation (ss-MAPLE) technique using the same solvent for both the polymers under vacuum conditions. Our ss-MAPLE procedure allows the fabrication of polymeric multilayer device stacks, which are very difficult to realize with the conventional solvent assisted deposition methods. A proof of concept bilayer P3HT/PCBM solar cell based on ss-MAPLE deposition has been realized and characterized. This demonstration qualifies ss-MAPLE as a general and alternative technique for the implementation of polymeric materials in hetero-structure device technology.

  9. Single-Crystalline CaMoO3 and SrMoO3 Films Grown by Pulsed Laser Deposition in a Reductive Atmosphere

    NASA Astrophysics Data System (ADS)

    Radetinac, Aldin; Takahashi, Kei S.; Alff, Lambert; Kawasaki, Masashi; Tokura, Yoshinori

    2010-07-01

    Single-crystalline thin films of CaMoO3 and SrMoO3 with a Mo4+ state perovskite structure have been epitaxially grown by pulsed-laser deposition from Mo6+ state ceramic targets. Phase-pure films were obtained on nearly lattice-matched perovskite substrates using argon gas flow during the deposition. Transport properties of the films are consistent with those of paramagnetic and metallic phases, whereas the residual resistivities are far lower than those reported previously for films and bulk polycrystals. These results indicate that this growth method can be useful for exploring the interfaces and junction properties of 4d and 5d transition metal oxides that are unstable in a conventional oxidative atmosphere.

  10. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Tataroğlu, A.; El Mir, L.; Al-Ghamdi, Ahmed A.; Dahman, H.; Farooq, W. A.; Yakuphanoğlu, F.

    2016-04-01

    The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

  11. Variation of bandgap with oxygen ambient pressure in Mg xZn 1- xO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Misra, P.; Bhattacharya, P.; Mallik, K.; Rajagopalan, S.; Kukreja, L. M.; Rustagi, K. C.

    2001-03-01

    Thin films of Mg xZn 1- xO were grown by pulsed laser deposition technique at various oxygen background pressures in the range of 10 -2-10 -5 Torr on single crystal (0001) alumina substrates. The films were found to be c-axis oriented with a high crystalline quality having FWHM of rocking curve of about 0.16°. The bandgap of Mg xZn 1- xO thin films was found to increase from 3.45 to 3.78 eV with decrease of oxygen pressure from 10 -2 to 10 -5 Torr during the deposition. This has been attributed to the increase in the Mg concentration in the films on decreasing the O 2 pressure.

  12. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

    SciTech Connect

    Skuza, J. R. E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K. E-mail: apradhan@nsu.edu

    2015-11-21

    We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

  13. The growth mode and microstructure of Ag-doped YBa 2Cu 3O 7-δ thin films prepared by dual beam pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Xu, S. Y.; Ong, C. K.; You, L. P.; Li, J.; Wang, S. J.

    Ag-doped c-axis YBa 2Cu 3O 7-δ thin films were fabricated by using dual-beam pulsed-laser deposition. When a small amount of silver was doped in the film grown at 700 °C, the Jc value was obviously enhanced. The temperature dependence of Jc was found proportional to ( 1- T/T c0 ) {3}/{2} at T close to Tc). In the films grown at 730 °C, we observed long bar-like structures with lengths in tens of μm, oriented along or at 45° to the a/ b axes of the film. The bars consisted mainly a-axis YBCO grains and a mixture of polycrystalline and amorphous oxides. Defects on substrate surface and growth temperature were found dominating in formation of the bars, which could be attributed to a Ag-assisted diffusion mechanism during the deposition process.

  14. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence.

    PubMed

    Patil, Ranjit A; Wei, Mao-Kuo; Yeh, P-H; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-14

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).

  15. Films of brookite TiO2 nanorods/nanoparticles deposited by matrix-assisted pulsed laser evaporation as NO2 gas-sensing layers

    NASA Astrophysics Data System (ADS)

    Caricato, A. P.; Buonsanti, R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Taurino, A.; Rella, R.

    2011-09-01

    Titanium dioxide (TiO2) nanorods in the brookite phase, with average dimensions of 3-4 nm × 20-50 nm, were synthesized by a wet-chemical aminolysis route and used as precursors for thin films that were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. A nanorod solution in toluene (0.016 wt% TiO2) was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser at a fluence of 350 mJ/cm2 and repetition rate of 10 Hz. Single-crystal Si wafers, silica slides, carbon-coated Cu grids and alumina interdigitated slabs were used as substrates to allow performing different characterizations. Films fabricated with 6000 laser pulses had an average thickness of ˜150 nm, and a complete coverage of the selected substrate as achieved. High-resolution scanning and transmission electron microscopy investigations evidenced the formation of quite rough films incorporating individually distinguishable TiO2 nanorods and crystalline spherical nanoparticles with an average diameter of ˜13 nm. Spectrophotometric analysis showed high transparency through the UV-Vis spectral range. Promising resistive sensing responses to 1 ppm of NO2 mixed in dry air were obtained.

  16. Computational study of the molecular level mechanisms of the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique for thin film deposition

    NASA Astrophysics Data System (ADS)

    Leveugle, Elodie Mathilde Julia Perrine

    There are a number of recent and emerging techniques that utilize the ability of laser ablation of a volatile matrix to entrain, eject and, if needed, deposit large macromolecules or nano-objects to a substrate. In particular, the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique shows a potential to produce uniform ultra-thin nanocomposite films with concentrations of nanoscale elements not attainable by other current methods. The lack of understanding of the fundamental underlying processes involved in laser ablation, however, hampers further optimization of the experimental parameters in MAPLE. In this dissertation I report the results of a comprehensive computational investigation of the relation between the basic mechanisms of laser interaction with multi-component target materials, the non-equilibrium processes caused by the fast deposition of laser energy, the parameters of the ejected ablation plume, and the resulting morphological characteristics of the growing film. The physical mechanisms and molecular-level picture of laser-induced material ejection from solutions of polymer molecules in a volatile matrix are analyzed in a series of coarse-grained molecular dynamics (MD) simulations. Simulations are performed for polymer concentrations up to 6 wt.% and laser fluences covering the range from the regime where molecular ejection is limited to matrix evaporation from the surface up to more than twice the threshold fluence for the onset of the collective molecular ejection or ablation. Contrary to the original picture of the ejection and transport of individual polymer molecules in MAPLE, the simulations indicate that polymer molecules are only ejected in the ablation regime and are always incorporated into polymer-matrix clusters generated in "phase explosion" of the target. Additionally, the entanglement of the polymer molecules facilitates the formation of elongated viscous droplets that can be related to nanofilament structures observed

  17. Electronic Properties of Layered Oxides:. Pulsed Laser Deposition of YBCO Films for In-Situ Studies by Photoemission Spectroscopy

    NASA Astrophysics Data System (ADS)

    Pavuna, D.; Ariosa, D.; Berger, H.; Christensen, S.; Frazer, B.; Gatt, R.; Grioni, M.; Margaritondo, G.; Misra, S.; Onellion, M.; Schmauder, T.; Vobornik, I.; Xi, X.; Zacchigna, M.; Zwick, F.

    Due to imperfect surfaces of most cuprate samples, almost all Photoemission studies in the past decade were performed on Bi2Sr2CaCu2O8+x, even though a large fraction of other studies and electronic applications was reported for YBa2Cu3O7-δ (YBCO) family of superconducting compounds. In order to systematically study the gap parameter and the Fermi surface variation in high symmetry directions of YBCO and related oxide films we have constructed a new facility at the Wisconsin Synchrotron Radiation Center. We use the pulsed laser ablation (PLD) system that is directly linked to the photoemission chamber. In our unique approach, the samples never leave the controlled ambient and we oxidize our films, either by molecular oxygen or by ozone. In this paper, we, summarize some of the most relevant recent results on electronic properties of layered oxides and describe our new facility for the study of YBCO and related oxide films.

  18. Luminescence of Pulsed Laser Deposited Y2SiO5:Tb3+ Thin Film Phosphors on Flat and Corrugated Quartz Glass Substrates

    NASA Astrophysics Data System (ADS)

    Sohn, Kee-Sun; Park, Duk Hyun; Yoo, Jeong Gon; Kim, Ji Sik

    2005-04-01

    Y2SiO5:Tb3+ thin film phosphors were deposited on flat and corrugated quartz glass plates by pulsed laser deposition (PLD) techniques in an attempt to use them in field emission displays (FED). As a preliminary step, cathodoluminescence and photoluminescence was monitored as a function of several processing parameters such as the oxygen partial pressure, the deposition time and the annealing conditions for films deposited on flat quartz glass plates. By adopting optimum processing conditions taken from the preliminary optimization process based on flat quartz glass substrates, Y2SiO5:Tb3+ thin films were also deposited on substrates on which a two-dimensional photonic crystal layer (2-D PCL) was developed, i.e., corrugated substrates. It was found that the Y2SiO5:Tb3+ thin film phosphor developed by PLD represents a promising candidate for use in field emission displays, and that the use of corrugated substrates enhanced the light extraction efficiency by a factor of 1.72.

  19. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    SciTech Connect

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul; Wiedwald, Ulf

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  20. High power ultrashort pulse lasers

    SciTech Connect

    Perry, M.D.

    1994-10-07

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced.

  1. Stoichiometry of LaAlO{sub 3} films grown on SrTiO{sub 3} by pulsed laser deposition

    SciTech Connect

    Golalikhani, M.; Lei, Q. Y.; Xi, X. X.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.

    2013-07-14

    We have studied the stoichiometry of epitaxial LaAlO{sub 3} thin films on SrTiO{sub 3} substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction ({theta}-2{theta} scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO{sub 3} film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10{sup -2} Torr. We conclude that the discussion of LaAlO{sub 3}/SrTiO{sub 3} interfacial properties should include the effects of cation off-stoichiometry in the LaAlO{sub 3} films when the deposition is conducted under low oxygen pressures.

  2. Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties

    NASA Astrophysics Data System (ADS)

    Martín-Sánchez, J.; Capan, I.; Chahboun, A.; Pinto, S. R. C.; Vieira, E. M. F.; Rolo, A. G.; Gomes, M. J. M.

    2013-09-01

    In this work, a novel customized shadowed off-axis deposition set-up is used to perform an original study of Ge nanoparticles (NPs) formation in an inert Ar gas atmosphere by pulsed laser deposition at room temperature varying systematically the background Ar gas pressure (Pbase(Ar)), target-substrate distance (d) and laser repetition rate (f). The influence of these parameters on the final NPs size distributions is investigated and a fairly uniform droplets-free and non-agglomerated NPs distribution with average height = 2.8 ± 0.6 nm is obtained for optimized experimental conditions (Pbase(Ar) = 1 mbar; d = 3 cm; f = 10 Hz) with a fine control in the NPs density (from 3.2 × 109 cm-2 to 1.1 × 1011 cm-2). The crystalline quality of as-deposited NPs investigations demonstrate a strong dependence with the Ar gas pressure and a crystalline to amorphous phase volume fraction χc > 50% is found for Pbase(Ar) = 2 mbar. The NPs functionality for charge trapping applications has been successfully demonstrated by capacitance-voltage (C-V) electrical measurements.

  3. Antiresorption implant coatings based on calcium alendronate and octacalcium phosphate deposited by matrix assisted pulsed laser evaporation.

    PubMed

    Boanini, Elisa; Torricelli, Paola; Forte, Lucia; Pagani, Stefania; Mihailescu, Natalia; Ristoscu, Carmen; Mihailescu, Ion N; Bigi, Adriana

    2015-12-01

    The integration of an implant material with bone tissue depends on the chemistry and physics of the implant surface. In this study we applied matrix assisted pulsed laser evaporation (MAPLE) in order to synthesize calcium alendronate monohydrate (a bisphosphonate obtained by calcium sequestration from octacalcium phosphate by alendronate) and calcium alendronate monohydrate/octacalcium phosphate composite thin films on titanium substrates. Octacalcium phosphate coatings were prepared as reference material. The powders, which were synthesized in aqueous medium, were suspended in deionised water, frozen at liquid nitrogen temperature and used as targets for MAPLE experiments. The transfer was conducted with a KrF* excimer laser source (λ = 248 nm, τFWHM ≤ 25 ns) in mild conditions of temperature and pressure. XRD, FTIR and SEM analyses confirmed that the coatings contain the same crystalline phases as the as-prepared powder samples. Osteoblast derived from stem cells and osteoclast derived from monocytes of osteoporotic subjects were co-cultured on the coatings up to 14 days. Osteoclast displayed significantly reduced proliferation and differentiation in the presence of calcium alendronate monohydrate, pointing to a clear role of the coatings containing this bisphosphonate on inhibiting excessive bone resorption. At variance, osteoblast production of alkaline phosphatase and type I pro-collagen were promoted by the presence of bisphosphonate, which also decreased the production of interleukin 6. The positive influence towards osteoblast differentiation was even more enhanced in the composite coatings, thanks to the presence of octacalcium phosphate. PMID:26445021

  4. Antiresorption implant coatings based on calcium alendronate and octacalcium phosphate deposited by matrix assisted pulsed laser evaporation.

    PubMed

    Boanini, Elisa; Torricelli, Paola; Forte, Lucia; Pagani, Stefania; Mihailescu, Natalia; Ristoscu, Carmen; Mihailescu, Ion N; Bigi, Adriana

    2015-12-01

    The integration of an implant material with bone tissue depends on the chemistry and physics of the implant surface. In this study we applied matrix assisted pulsed laser evaporation (MAPLE) in order to synthesize calcium alendronate monohydrate (a bisphosphonate obtained by calcium sequestration from octacalcium phosphate by alendronate) and calcium alendronate monohydrate/octacalcium phosphate composite thin films on titanium substrates. Octacalcium phosphate coatings were prepared as reference material. The powders, which were synthesized in aqueous medium, were suspended in deionised water, frozen at liquid nitrogen temperature and used as targets for MAPLE experiments. The transfer was conducted with a KrF* excimer laser source (λ = 248 nm, τFWHM ≤ 25 ns) in mild conditions of temperature and pressure. XRD, FTIR and SEM analyses confirmed that the coatings contain the same crystalline phases as the as-prepared powder samples. Osteoblast derived from stem cells and osteoclast derived from monocytes of osteoporotic subjects were co-cultured on the coatings up to 14 days. Osteoclast displayed significantly reduced proliferation and differentiation in the presence of calcium alendronate monohydrate, pointing to a clear role of the coatings containing this bisphosphonate on inhibiting excessive bone resorption. At variance, osteoblast production of alkaline phosphatase and type I pro-collagen were promoted by the presence of bisphosphonate, which also decreased the production of interleukin 6. The positive influence towards osteoblast differentiation was even more enhanced in the composite coatings, thanks to the presence of octacalcium phosphate.

  5. Laser system using ultra-short laser pulses

    DOEpatents

    Dantus, Marcos; Lozovoy, Vadim V.; Comstock, Matthew

    2009-10-27

    A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

  6. High-power pulsed lasers

    SciTech Connect

    Holzrichter, J.F.

    1980-04-02

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization.

  7. Preparation of W–Sc{sub 2}O{sub 3} targets and scandate cathodes with film prepared by pulsed laser deposition

    SciTech Connect

    Zhang, Xizhu; Wang, Jinshu Liu, Wei; Tian, Tian; Zhou, Meiling

    2013-12-15

    Graphical abstract: - Highlights: • W–Sc{sub 2}O{sub 3} film containing 5% Sc{sub 2}O{sub 3} and 95% W were prepared by pulsed laser deposition. • W–Sc{sub 2}O{sub 3} film on scandate cathode surface improves emission property. • The film improves Sc distribution uniformity and is favorable for forming Ba–Sc–O layer. - Abstract: Sub-micrometer Sc{sub 2}O{sub 3}–W powder with a narrow particle size distribution has been obtained by a sol–gel method combined with two-step hydrogen reduction process. Based on the obtained powder, the W–Sc{sub 2}O{sub 3} targets have been sintered via spark plasma sintering (SPS) at 1300 °C. The W–Sc{sub 2}O{sub 3} targets have the average grain size of about 1 μm. Both the sintering temperature and holding time are much lower than those of the targets prepared with micrometer sized powders. The obtained W–Sc{sub 2}O{sub 3} targets have a high comparative density of 96.4% and rockwell hardness of 86.4 HRC. Using the target, the scandate cathode deposited with a film containing 5% Sc{sub 2}O{sub 3} and 95% W has been obtained by pulsed laser deposition (PLD) method. This cathode has good emission property, i.e., the highest thermionic emission current density reaches 43.09 A/cm{sup 2} of J{sub div} at 900 °C{sub b} after being activated for 8 h, which is much higher than that of scandate cathode without film. Scandium (Sc) supplied by the film on the surface during the activation forms a Ba–Sc–O active layer, which helps to the emission.

  8. Lasers for ultrashort light pulses

    SciTech Connect

    Herrmann, J.; Wilhelmi, B.

    1987-01-01

    The present rapid expansion of research work on picosecond lasers and their application makes it difficult to survey and comprehend the large number of publications in this field. This book aims to provide an introduction to the field starting with the very basic and moving on to an advanced level. Contents: Fundamentals of the interaction between light pulses and matter; Fundamentals of lasers for ultrashort light pulses; Methods of measurement; Active modelocking; Synchronously pumped lasers; Passive modelocking of dye lasers; Passive modelocking of solid state lasers; Nonstationary nonlinear optical processes; Ultrafast spectroscopy.

  9. Pulsed laser deposition of epitaxial YBa2Cu3O7-y / oxide multilayers onto textured NiFe substrates for coated conductor applications

    NASA Astrophysics Data System (ADS)

    Tomov, R. I.; Kursumovic, A.; Majoros, M.; Kang, D.-J.; Glowacki, B. A.; Evetts, J. E.

    2002-04-01

    Pulsed laser depositions of double-buffer and triple-buffer YBa2Cu3O7-y (YBCO)/Y2O3(YSZ)/CeO2 heterostructures have been performed in situ onto commercially available biaxially textured NiFe 50%/50% tape. The deposition in the forming gas (4% H2/Ar) from a CeO2 target and the deposition in vacuum from a CeO2:Pd composite target have been explored as two possible routes for cube-on-cube growth of the first buffer layer. The influence of the critical processing parameters on the texture is investigated and some of the issues involved in the reduction of NiO (111) and the formation of cube-on-cube NiO (200) growth are discussed. X-ray diffraction has been used for texture evaluation of the substrate and subsequent deposited layers. The substrate-buffer interface region has been studied by focused ion beam cross section electron microscopy. Both the buffers and YBCO layers show biaxial alignment with ω and φ scans having optimum YBCO full width at half maximum (FWHM) values of 4.3° and 8.8°, respectively. The morphology has been characterized using atomic force microscopy and scanning electron microscopy. The value of Tc (onset) has been measured at 90 K (ΔTc = 10 K). The critical current density, Jc, has been measured by transport measurements and magnetic measurements performed in a dc SQUID magnetometer.

  10. Pressure effect on the magnetization of Sr{sub 2}FeMoO{sub 6} thin films grown by pulsed laser deposition

    SciTech Connect

    Fix, T.; Versini, G.; Loison, J.L.; Colis, S.; Schmerber, G.; Pourroy, G.; Dinia, A.

    2005-01-15

    Thin films of Sr{sub 2}FeMoO{sub 6} (SFMO) are grown on SrTiO{sub 3} (001) substrates by pulsed laser deposition. The best films provide 3.2{mu}{sub B}/f.u. at 5 K, a Curie temperature above 400 K, low roughness, high crystallinity, and low splashing. Therefore, the use of such SFMO electrodes in magnetic tunnel junctions patterned with conventional lithography is promising. Pseudomorphic epitaxial growth is obtained for thicknesses under 50 nm. Above this thickness the films do not relax homogeneously. A coherent and systematic variation of the magnetization with the deposition conditions is obtained, which highlights a high reproducibility. Under a reasonable O{sub 2} partial pressure to avoid parasite phases, the limiting factor for high magnetization is the total pressure or the deposition rate. Therefore, the deposition rate is suspected to have a strong influence on the Fe/Mo ordering. Highly magnetic samples are obtained under a low gas flow of either a 20% O{sub 2}+N{sub 2} or a 0.3% O{sub 2}+Ar.

  11. Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe 12O 19) film prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2012-04-01

    The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ50) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.

  12. Epitaxial thin-film growth of Ruddlesden-Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Butt, Shariqa Hassan; Rafique, M. S.; Siraj, K.; Latif, A.; Afzal, Amina; Awan, M. S.; Bashir, Shazia; Iqbal, Nida

    2016-07-01

    Ruddlesden-Popper Ba3Zr2O7 thin films have been synthesized via pulsed laser deposition (PLD) technique. The optimization of deposition parameters in PLD enables the formation of thin film of metastable Ba3Zr2O7 phase from BaZrO3 target. In order to see the post-annealing effects on the structural and optical properties, the deposited Ba3Zr2O7 thin films were annealed at 500, 600 and 800 °C. X-ray diffraction (XRD) reveals the formation of Ba3Zr2O7 phase with tetragonal structure. The changes in the surface of the deposited films were analysed by FE-SEM and AFM. The thin film post-annealed at 500 °C exhibited the best structural, optical and surface properties. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Zr and O exist mainly in the form of Ba3Zr2O7 Ruddlesden-Popper-type perovskite structure.

  13. Surface plasmon resonances of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition at different compositions and temperatures

    SciTech Connect

    Verma, Shweta Rao, B. T.; Detty, A. P.; Kukreja, L. M.; Ganesan, V.; Phase, D. M.; Rai, S. K.; Bose, A.; Joshi, S. C.

    2015-04-07

    We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles of increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.

  14. Mechanical properties of pulsed laser-deposited hydroxyapatite thin film implanted at high energy with N + and Ar + ions. Part I: nanoindentation with spherical tipped indenter

    NASA Astrophysics Data System (ADS)

    Pelletier, H.; Nelea, V.; Mille, P.; Muller, D.

    2004-02-01

    We report here a comparison between the effects of ion beam implantation treatment using nitrogen and argon ions, on the mechanical characteristics of HA films grown by pulsed laser deposition, using a KrF ∗ excimer laser. Crystalline and stoichiometric HA films were grown on Ti-5Al-2.5Fe alloy substrate, previously coated with a TiN buffer layer. After deposition, the film were implanted with ions of N + and Ar + of high energy (1-1.5 MeV range) and dose set at 10 16 at cm -2. From the load-displacement curves determined by nanoindentation tests using a spherical tipped nanoindenter ( R=5 μm), we put into evidence an enhancement of the mechanical characteristics (hardness and elastic modulus) of the HA films after implantation, especially for those implanted with N + ions. Moreover, using various applied normal loads (ranging from 1 to 100 mN) in different implanted areas, a good reproducibility of nitrogen implantation effect are observed.

  15. Pulsed laser deposition of CuInS2 quantum dots on one-dimensional TiO2 nanorod arrays and their photoelectrochemical characteristics

    NASA Astrophysics Data System (ADS)

    Han, Minmin; Chen, Wenyuan; Guo, Hongjian; Yu, Limin; Li, Bo; Jia, Junhong

    2016-06-01

    In the typical solution-based synthesis of colloidal quantum dots (QDs), it always resorts to some surface treatment, ligand exchange processing or post-synthesis processing, which might involve some toxic chemical regents injurious to the performance of QD sensitized solar cells. In this work, the CuInS2 QDs are deposited on the surface of one-dimensional TiO2 nanorod arrays by the pulsed laser deposition (PLD) technique. The CuInS2 QDs are coated on TiO2 nanorods without any ligand engineering, and the performance of the obtained CuInS2 QD sensitized solar cells is optimized by adjusting the laser energy. An energy conversion efficiency of 3.95% is achieved under one sun illumination (AM 1.5, 100 mW cm-2). The improved performance is attributed to enhanced absorption in the longer wavelength region, quick interfacial charge transfer and few chance of carrier recombination with holes for CuInS2 QD-sensitized solar cells. Moreover, the photovoltaic device exhibits high stability in air without any specific encapsulation. Thus, the PLD technique could be further applied for the fabrication of QDs or other absorption materials.

  16. Calorimeters for pulsed lasers: calibration.

    PubMed

    Thacher, P D

    1976-07-01

    A calibration technique is developed and tested in which a calorimeter used for single-shot laser pulse energy measurements is calibrated with reference to a cw power standard using a chopped cw laser beam. A pulsed laser is required only to obtain the relative time response of the calorimeter to a pulse. With precautions as to beam alignment and wavelength, the principal error of the technique is that of the cw standard. Calibration of two thermopiles with cone receivers showed -2.5% and -3.5% agreement with previous calibrations made by the National Bureau of Standards. PMID:20165270

  17. In-situ growth of superconducting SmO1−xFxFeAs thin films by pulsed laser deposition

    PubMed Central

    Haindl, Silvia; Hanzawa, Kota; Sato, Hikaru; Hiramatsu, Hidenori; Hosono, Hideo

    2016-01-01

    Oxypnictide thin film growth by pulsed laser deposition (PLD) is one of many insufficiently resolved issues in the research of iron-based superconductors. Here we report on the successful realization of superconducting SmO1−xFxFeAs oxypnictide thin film growth by in-situ PLD on CaF2 (fluorite) substrates. CaF2 acts as fluorine supplier by diffusion and thus enables superconducting oxypnictide thin film growth by PLD. Films are grown heteroepitaxially and characteristically have a broad resistive normal-to-superconducting transition. Best films have onset transition temperatures around 40 K. The proposed in-situ PLD film growth offers an alternative and cheap route for the fabrication of iron oxypnictides. PLD becomes now an additional option for iron oxypnictide synthesis. PMID:27767066

  18. Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, W.; Yang, J. J.; Gao, G. Y.; Lei, Y.; Zhu, J.; Zeng, H. Z.; Zheng, F. G.; Hao, J. H.

    2014-08-01

    BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2 × 102 at the applied voltage of ±13.4 V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.

  19. Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2006-06-01

    We have grown In0.25Ga0.75N films on nearly lattice-matched ZnO (0001) substrates with atomically flat surfaces at low substrate temperatures using pulsed laser deposition. We have found that InGaN having a stepped and terraced structure on its surface grows at low substrate temperatures. We have also found that InGaN grows in the layer-by-layer mode, even at room temperature (RT), while maintaining straight steps and atomically flat terraces from the first monolayer. This phenomenon exhibits a singular contrast to the case of RT epitaxy of GaN on ZnO, where a considerable number of defects are observed on the stepped structure of the first several layers. This difference can be attributed to a smaller lattice mismatch between InGaN and ZnO.

  20. Pulsed laser deposition growth and transport studies of superconducting La1.85Y0.15CuO4 thin films

    NASA Astrophysics Data System (ADS)

    Yu, Weiqiang; Liang, B.; Li, P.; Greene, R. L.; Fujino, S.; Murakami, T.; Takeuchi, I.

    2007-03-01

    The recent MBE growth of the ``nominally undoped" cuprate superconductor (La,RE)2CuO4 has led to the speculation that this system is a band metal and not a ``doped Mott insulator" as found in all other superconducting cuprates ^1. Here we report the first pulsed laser deposition (PLD) growth of insulating and superconducting La1.85Y0.15CuO4 thin films, which are prepared under different oxygen conditions. We also report resistivity, Hall, Nernst, and magnetoresistance measurements, which show that La1.85Y0.15CuO4 is an electron-doped, Mott-Hubbard system, where the carriers originate from oxygen nonstoichiometry produced by the oxygen reduction. This work is supported by NSF (DMR 0352735).^1A. Tsukada et al., Sol. Stat. Commu. 133, 427 (2005).

  1. Epitaxial Ba{sub 2}IrO{sub 4} thin-films grown on SrTiO{sub 3} substrates by pulsed laser deposition

    SciTech Connect

    Nichols, J. Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-03-24

    We have synthesized epitaxial Ba{sub 2}IrO{sub 4} (BIO) thin-films on SrTiO{sub 3} (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr{sub 2}IrO{sub 4}. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

  2. Sr{sub 2}MgMoO{sub 6−δ} thin films fabricated using pulsed-laser deposition with high concentrations of oxygen vacancies

    SciTech Connect

    Shigematsu, K.; Chikamatsu, A. Fukumura, T.; Toyoda, S.; Ikenaga, E.

    2014-06-30

    We fabricated epitaxial thin films of oxygen-vacant Sr{sub 2}MgMoO{sub 6−δ} using pulsed laser deposition. The films showed low resistivity of the order of 10{sup −2} Ω cm at 300 K. X-ray diffraction analyses revealed that Mg and Mo ions in the Sr{sub 2}MgMoO{sub 6−δ} films were considerably disordered, compared to those in bulk Sr{sub 2}MgMoO{sub 6−δ}. The proportion of oxygen vacancies estimated through hard x-ray photoemission measurements was as large as 0.37, and correlated well with the Mg/Mo ordering.

  3. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).

  4. Positive magnetoresistance in ferromagnetic Nd-doped In{sub 2}O{sub 3} thin films grown by pulse laser deposition

    SciTech Connect

    Xing, G. Z. Yi, J. B.; Li, S.; Yan, F.; Wu, T.

    2014-05-19

    We report the magnetic and magnetotransport properties of (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

  5. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    SciTech Connect

    Glavin, Nicholas R. E-mail: andrey.voevodin@us.af.mil; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A. E-mail: andrey.voevodin@us.af.mil

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  6. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    PubMed

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  7. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    NASA Astrophysics Data System (ADS)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-01

    A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with VOC of 772.92 mV, JSC of 25.11 mA/cm2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  8. Influence of substrate temperature on the properties of pulsed laser deposited silver nanoparticle thin films and their application in SERS detection of bovine serum albumin

    NASA Astrophysics Data System (ADS)

    Kamakshi, Koppole; Silva, J. P. B.; Sekhar, K. C.; Marslin, Gregory; Moreira, J. Agostinho; Conde, O.; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    The effect of substrate temperature ( T s) on electrical conductance, surface plasmon resonance (SPR), and surface-enhanced Raman scattering (SERS) activity of silver nanoparticle (AgNP) thin films is presented. AgNP films are grown on glass substrates by pulsed laser deposition in a controlled Ar atmosphere at a pressure of 0.1 mbar and varying T s. Different T s results in different morphologies, as observed by scanning electron microscopy. The effect of interparticle distance on the electrical conductance of AgNPs is highlighted. The current-voltage characteristics display negative resistance effect and is attributed to the charge trapping process in AgNPs. The film deposited at room temperature presents a SPR peak at λ = 460 nm, and its wavelength first increases until T s reaches 300 °C and then decreases with further increasing T s. The quantitative analysis of SERS studies reveals that SERS intensity of bovine serum albumin (BSA) adsorbed on AgNP substrate deposited at 300 °C exhibits a higher intensity as compared with that of BSA adsorbed on the SERS active substrates at any other T s.

  9. Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process

    SciTech Connect

    Huang, J.; Wang, L.; Wen, J.; Wang, Y.; Lin, C.; Zetterling, C.M.; Oestling, M.

    1999-07-01

    Crystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were employed to study the effect of annealing on the structure of thin films deposited at 800 C. It was demonstrated that vacuum annealing could transform the amorphous SiC films into crystalline phase and that the crystallinity was strongly dependent on the annealing temperature. For the samples deposited on (100) and (111) Si, the optimum annealing temperatures were 980 and 920 C, respectively. Scanning electron microscope (SEM) micrographs exhibited different characteristic microstructure for the (100) and (111) Si cases, similar to that observed for the carbonization layer initially formed in chemical vapor deposition of SiC films on Si. This also showed the presence of the epitaxial relationship of 3C-SiC[100]//Si[100] and 3C-SiC[111]//Si[111] in the direction of growth.

  10. Interaction between the silyl and silylen centres in the deposits prepared by pulsed laser ablation of silicon monoxide and ammonia, methylamine and dimethylamine

    NASA Astrophysics Data System (ADS)

    Dřínek, V.; Vacek, K.; Yuzhakov, G.; Bastl, Z.

    2005-10-01

    Silicon suboxide films were prepared by TEA CO2 pulsed laser ablation (PLA) of the silicon monoxide target in the Kr atmosphere. The deposits were examined by means of Fourier transformed infrared spectroscopy (FTIR), electron paramagnetic resonance spectroscopy (EPR) and X-ray photoelectron spectroscopy (XPS). The generated point defects in the films mostly silyl ≡Si· (E’ center) and silylen =Si: were allowed to react with the gaseous ammonia NH3, methylamine MeNH2 and dimethylamine Me2NH after the ablation. As a result, the functional groups ≡SiNHxMey (x+y=2) were formed. The reactivity of the deposits are due to silyl ≡Si· and silylen =Si: radicals as deduced by comparison of the initial concentration of the silyl radicals (5.3 9.8×1019 /g, EPR) and the newly formed -(Si)NH bonds (3.6×1019 /g, FTIR). The observed absorption bands ν(SiH) at 2223, 2214 and 2220 cm-1 could be assigned to =(O2)Si(H)NH2, =(O2)Si(H)NHMe and =(O2)Si(H)NMe2 species. The singlet line in EPR spectrum of the native deposit before exposition is due to the silyl radical with free valence on the silicon backbonded via oxygen and another silicon atom. After exposition either to NH3 or MeNH2 the silyl concentration rapidly decreased to several % of its original value.

  11. Structural, XPS and magnetic studies of pulsed laser deposited Fe doped Eu{sub 2}O{sub 3} thin film

    SciTech Connect

    Kumar, Sandeep; Prakash, Ram; Choudhary, R.J.; Phase, D.M.

    2015-10-15

    Highlights: • Growth of Fe doped Eu{sub 2}O{sub 3} thin films by PLD. • XRD and Raman’s spectroscopy used for structure confirmation. • The electronic states of Eu and Fe are confirmed by XPS. • Magnetic properties reveals room temperature magnetic ordering in deposited film. - Abstract: Fe (4 at.%) doped europium (III) oxide thin film was deposited on silicon (1 0 0) substrate by pulsed laser deposition technique. Structural, spectral and magnetic properties were studied by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and magnetization measurements. XRD and Raman spectroscopy reveal that the grown film is single phased and belongs to the cubic structure of Eu{sub 2}O{sub 3}. XPS study of the Eu{sub 1.92}Fe{sub 0.08}O{sub 3} film shows that Fe exists in Fe{sup 3+} ionic state in the film. The film exhibits magnetic ordering at room temperature.

  12. Some aspects of pulsed laser deposited nanocrystalline LaB(6) film: atomic force microscopy, constant force current imaging and field emission investigations.

    PubMed

    Late, Dattatray J; Date, Kalyani S; More, Mahendra A; Misra, Pankaj; Singh, B N; Kukreja, Lalit M; Dharmadhikari, C V; Joag, Dilip S

    2008-07-01

    Nanocrystalline lanthanum hexaboride (LaB(6)) films have been deposited on molybdenum foil by the pulsed laser deposition (PLD) technique. The as-deposited films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD pattern shows the cubic crystallinity of the LaB(6) film. The AFM studies reveal that the conical shaped LaB(6) nanostructures have height 60 nm, base 800 nm, and a typical radius of curvature ∼20 nm. A comparison of force and in situ current imaging AFM studies reveals that current contrast does not originate from the surface topography of the LaB(6) film. Field emission studies have been performed in the planar diode configuration. A current density of 4.4 × 10(-2) A cm(-2) is drawn from the actual emitting area. The Fowler-Nordheim plot is found to be linear, in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor is estimated to be 3585, indicating that the field emission is from LaB(6) nanocrystallites present on the emitter surface, as confirmed by the AFM. The emission current-time plots show current stability to the extent of 5% fluctuation about the average current over a period of 3 h.

  13. Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films

    NASA Astrophysics Data System (ADS)

    Sudheendran, K.; Ghanashyam Krishna, M.; Raju, K. C. James

    2009-05-01

    Bismuth Zinc niobate (Bi1.5Zn1.0Nb1.5O7) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36-2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30-3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.

  14. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  15. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    2008-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  16. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    1999-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  17. Structural, spectroscopic and electrical studies of nanostructured porous ZnO thin films prepared by pulsed laser deposition.

    PubMed

    Vinodkumar, R; Navas, I; Porsezian, K; Ganesan, V; Unnikrishnan, N V; Mahadevan Pillai, V P

    2014-01-24

    ZnO thin films are grown on quartz substrates at various substrate temperatures (ranging from 573 to 973 K) under an oxygen ambience of 0.02 mbar by using pulsed laser ablation. Influence of substrate temperature on the structural, morphological, optical and electrical properties of the ZnO thin films are investigated. The XRD and micro-Raman spectra reveal the presence of hexagonal wurtzite structure of ZnO with preferred orientation (002). The particle size is calculated using Debye-Scherer equation and the average size of the crystallites are found to be in the range 17-29 nm. The AFM study reveals that the surface morphology of the film depends strongly on the substrate temperature. UV-Visible transmittance spectra show highly transparent nature of the films in visible region. The calculated optical band gap energy is found to be decrease with increase in substrate temperatures. The complex dielectric constant, the loss factor and the distribution of the volume and surface energy loss of the ZnO thin films prepared at different substrate temperatures are calculated. All the films are found to be highly porous in nature. The PL spectra show very strong emission in the blue region for all the films. The dc electrical resistivity of the film decreases with increase in substrate temperature. The temperature dependent electrical measurements done on the film prepared at substrate temperature 573 K reveals that the electric conduction is thermally activated and the activation energy is found to be 0.03911 eV which is less than the reported values for ZnO films.

  18. Structural, spectroscopic and electrical studies of nanostructured porous ZnO thin films prepared by pulsed laser deposition.

    PubMed

    Vinodkumar, R; Navas, I; Porsezian, K; Ganesan, V; Unnikrishnan, N V; Mahadevan Pillai, V P

    2014-01-24

    ZnO thin films are grown on quartz substrates at various substrate temperatures (ranging from 573 to 973 K) under an oxygen ambience of 0.02 mbar by using pulsed laser ablation. Influence of substrate temperature on the structural, morphological, optical and electrical properties of the ZnO thin films are investigated. The XRD and micro-Raman spectra reveal the presence of hexagonal wurtzite structure of ZnO with preferred orientation (002). The particle size is calculated using Debye-Scherer equation and the average size of the crystallites are found to be in the range 17-29 nm. The AFM study reveals that the surface morphology of the film depends strongly on the substrate temperature. UV-Visible transmittance spectra show highly transparent nature of the films in visible region. The calculated optical band gap energy is found to be decrease with increase in substrate temperatures. The complex dielectric constant, the loss factor and the distribution of the volume and surface energy loss of the ZnO thin films prepared at different substrate temperatures are calculated. All the films are found to be highly porous in nature. The PL spectra show very strong emission in the blue region for all the films. The dc electrical resistivity of the film decreases with increase in substrate temperature. The temperature dependent electrical measurements done on the film prepared at substrate temperature 573 K reveals that the electric conduction is thermally activated and the activation energy is found to be 0.03911 eV which is less than the reported values for ZnO films. PMID:24100297

  19. Pulsed laser deposition of c-axis untilted YBCO films on c-axis tilted ISD MgO-buffered metallic substrates

    NASA Astrophysics Data System (ADS)

    Li, M.; Ma, B.; Koritala, R. E.; Fisher, B. L.; Venkataraman, K.; Maroni, V. A.; Vlasko-Vlasov, V.; Berghuis, P.; Welp, U.; Gray, K. E.; Balachandran, U.

    2003-05-01

    Biaxially textured MgO template layer was deposited on nontextured metal substrates by inclined-substrate deposition (ISD) at a deposition rate of 24-600 nm/min. c-axis untilted YBa 2Cu 3O 7- x (YBCO) films were deposited on these MgO-buffered substrates by pulsed laser deposition. The crystalline structures of the YBCO films and MgO layers were examined by X-ray pole figure analysis, X-ray φ-scans, and χ-scans. A tilt angle of 33° of the MgO[0 0 1] with respect to the substrate normal and c-axis untilted YBCO films were observed, respectively. Good biaxial texture of these films with full-width-at-half-maximum values of 13.8° and 10.6° for the φ-scans of YBCO(1 0 3) and MgO(2 2 0), respectively, were obtained. Morphologies were examined by scanning electron microscopy, which revealed a unique roof-tile feature and columnar grain growth for the ISD MgO layer. Raman spectroscopy and magneto-optical image technique were also used to evaluate the quality of the YBCO film. An angular dependence of Jc on the direction of an applied magnetic field confirmed the c-axis untilted orientation of the YBCO films. Tc=90 K with sharp transition and Jc=3.0×10 5 A/cm 2 at 77 K in zero field were obtained on 0.4-μm-thick YBCO films.

  20. Dual-Laser-Pulse Ignition

    NASA Technical Reports Server (NTRS)

    Trinh, Huu; Early, James W.; Thomas, Matthew E.; Bossard, John A.

    2006-01-01

    A dual-pulse laser (DPL) technique has been demonstrated for generating laser-induced sparks (LIS) to ignite fuels. The technique was originally intended to be applied to the ignition of rocket propellants, but may also be applicable to ignition in terrestrial settings in which electric igniters may not be suitable.

  1. Thickness dependent structural, optical and electrical properties of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} thin films deposited by pulsed laser deposition

    SciTech Connect

    Mishra, Pradeep K.; Prasad, J. N.; Gautam, Yogendra K.; Jain, Ravish K.; Choudhary, A. K.; Chandra, Ramesh; Kumar, Ashwani

    2014-01-28

    CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaks for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ∼10{sup 6} cm{sup −1} absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.

  2. Comparative study of LiMn 2O 4 thin film cathode grown at high, medium and low temperatures by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tang, S. B.; Lai, M. O.; Lu, L.; Tripathy, S.

    2006-12-01

    LiMn 2O 4 thin films with different crystallizations were respectively grown at high, medium and low temperatures by pulsed laser deposition (PLD). Structures, morphologies and electrochemical properties of these three types of thin films were comparatively studied. Films grown at high temperature (⩾873 K) possessed flat and smooth surfaces and were highly crystallized with different textures and crystal sizes depending on the deposition pressure of oxygen. However, films deposited at low temperature (473 K) had rough surfaces with amorphous characteristics. At medium temperature (673 K), the film was found to consist mainly of nano-crystals less than 100 nm with relatively loose and rough surfaces, but very dense as observed from the cross-section. The film deposited at 873 K and 100 mTorr of oxygen showed an initial discharge capacity of 54.3 μAh/cm 2 μm and decayed at 0.28% per cycle, while the amorphous film had an initial discharge capacity of 20.2 μAh/cm 2 μm and a loss rate of 0.29% per cycle. Compared with the highly crystallized and the amorphous films, nano-crystalline film exhibited higher potential, more capacity and much better cycling stability. As high as 61 μAh/cm 2 μm of discharge capacity can be achieved with an average decaying rate of only 0.032% per cycle up to 500 cycles. The excellent performance of nano-crystalline film was correlated to its microstructures in the present study.

  3. Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

    NASA Astrophysics Data System (ADS)

    Nian, Qiong; Montgomery, Kyle H.; Zhao, Xin; Jackson, Tom; Woodall, Jerry M.; Cheng, Gary J.

    2015-11-01

    Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

  4. Vertical La0.7Ca0.3MnO3 nanorods tailored by high magnetic field assisted pulsed laser deposition

    PubMed Central

    Zhang, Kejun; Dai, Jianming; Zhu, Xuebin; Zhu, Xiaoguang; Zuo, Xuzhong; Zhang, Peng; Hu, Ling; Lu, Wenjian; Song, Wenhai; Sheng, Zhigao; Wu, Wenbin; Sun, Yuping; Du, Youwei

    2016-01-01

    La0.7Ca0.3MnO3 (LCMO) thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] single crystal substrates have been prepared by high magnetic field assisted pulsed laser deposition (HMF-PLD) developed by ourselves. Uniformly sized and vertically aligned nanorod structures can be obtained under an applied high magnetic field above 5 T, and the dimension size of the nanorods can be manipulated by varying the applied magnetic field. It is found that the magnetic anisotropy is strongly correlated to the dimension size of the nanorods. A significantly enhanced low-field magnetoresistance (LFMR) of −36% under 0.5 T at 100 K can be obtained due to the enhanced carrier scattering at the vertical grain boundaries between the nanorods for the LCMO films. The growth mechanism of the nanorods has been also discussed, which can be attributed to the variation of deposition rate, adatom surface diffusion, and nucleation induced by the application of a high magnetic field in the film processing. The successful achievements of such vertical nanorod structures will provide an instructive route to investigate the physical nature of these nanostructures and achieve nanodevice manipulation. PMID:26778474

  5. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    PubMed

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt.

  6. Nonpolar a-plane ZnO films grown on GaN/sapphire templates with SiNx interlayer by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Han, Xiangyun; Gao, Yihua; Dai, Jiangnan; Yu, Chenhui; Wu, Zhihao; Chen, Changqing; Fang, Guojia

    2010-04-01

    Nonpolar a-plane ZnO films were deposited for the first time on nearly lattice-matched a-plane GaN templates using an in situ SiNx interlayer by the pulsed laser deposition method. The symmetric and asymmetric reciprocal space mappings reveal the broadening effects of the reciprocal lattice points and the residual biaxial in-plane tensile strain of a-plane ZnO to be 0.335% and 0.055% along the [0 0 0 1] c-axis and [{1\\,\\bar {1}\\,0\\,0}] p-axis, respectively. The photoluminescence spectrum at 85 K is dominated by neutral donor-bound excitons and free-electron-to-bound (e-A0) emissions; relatively intense LO-phonon replicas of (e-A0) have also been observed in a-plane ZnO. Temperature-dependent PL spectra have also been discussed to identify the origin of the emission peaks. Up to fourth A1(LO) phonon mode can be observed to be enhanced significantly from the resonant Raman spectrum.

  7. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    PubMed Central

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:25520597

  8. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    PubMed

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt. PMID:21684682

  9. Enhancing the light absorbance of polymer solar cells by introducing pulsed laser-deposited CuIn0.8Ga0.2Se2 nanoparticles

    PubMed Central

    2014-01-01

    Evenly separated crystalline CuIn0.8Ga0.2Se2 (CIGS) nanoparticles are deposited on ITO-glass substrate by pulsed laser deposition. Such CIGS layers are introduced between conjugated polymer layers and ITO-glass substrates for enhancing light absorbance of polymer solar cells. The P3HT:PCBM absorbance between 300 and 650 nm is enhanced obviously due to the introduction of CIGS nanoparticles. The current density-voltage curves of a P3HT:PCBM/CIGS solar cell demonstrate that the short-circuit current density is improved from 0.77 to 1.20 mA/cm2. The photoluminescence spectra show that the excitons in the polymer are obviously quenched, suggesting that the charge transfer between the P3HT:PCBM and CIGS occurred. The results reveal that the CIGS nanoparticles may exhibit the localized surface plasmon resonance effect just as metallic nanostructures. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:24994961

  10. Antifungal activity of Ag:hydroxyapatite thin films synthesized by pulsed laser deposition on Ti and Ti modified by TiO2 nanotubes substrates

    NASA Astrophysics Data System (ADS)

    Eraković, S.; Janković, A.; Ristoscu, C.; Duta, L.; Serban, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Socol, M.; Iordache, O.; Dumitrescu, I.; Luculescu, C. R.; Janaćković, Dj.; Miškovic-Stanković, V.

    2014-02-01

    Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FTIR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity.

  11. Ion beam-assisted pulsed laser deposition of (Ba,Sr)(Ti,Zr)O{sub 3} films on Pt-Si substrates

    SciTech Connect

    Sakai, Joe; Vayunandana Reddy, Y. K.; Autret-Lambert, Cecile; Lagrange, Jean-Francois; Motret, Olivier; Roger, Sylvain; Wolfman, Jerome

    2011-05-15

    Ion beam-assisted pulsed laser deposition with an Ar-oxygen ion mixture was used to prepare Ba{sub 0.6}Sr{sub 0.4}Ti{sub 0.7}Zr{sub 0.3}O{sub 3} (BSTZ) thin films on Pt-coated Si substrates. The ion beam with an anode voltage of 600 V was effective to reduce the thermal budget, i.e., to achieve similar crystallinity with approximately 100 deg. C lower deposition temperature compared to the cases without ionization. It was revealed that the dielectric properties (relative dielectric constant {epsilon}{sub r} and its electric field tunability), out-of-plane lattice parameter of (001)-oriented grains (a{sub 001}), and the existence of (110)-oriented grains are correlated with one another. Elongation of a{sub 001} was suppressed, resulting in large {epsilon}{sub r} values comparable with that of a ceramic bulk of the same composition, in the BSTZ films that contain (110)-oriented grains. Less volume of amorphous BSTZ region is supposed to be playing an important role for the bulklike properties of these BSTZ films.

  12. Studies on the growth of epitaxial bismuth-substituted iron garnet on gadolinium gallium garnet single crystals by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Leitenmeier, Stephan; Körner, Timo; Griesbauer, Josef; Herbort, Michael; Heinrich, Andreas; Stritzker, Bernd

    2008-12-01

    In this paper, we present extensive investigations of the growth of bismuth-substituted iron garnet Bi 3Fe 5O 12 (BIG) on (0 0 1)-, (1 1 1)- and (1 1 0)-oriented gadolinium gallium garnet Gd 3Ga 5O 12 (GGG) and doped GGG (SGGG, S*GGG) substrates by pulsed laser deposition. The growth has been studied by the use of in-situ reflecting high-energy electron diffraction, atomic force microscopy, scanning electron microscopy and X-ray diffraction. We found 3D island growth to be the dominant growth mode for the BIG films. Additionally, we present a special technique to create very large BIG growth islands. This method involves the use of a metallic bismuth iron ablation target and partially shielding the substrate during deposition. The growth islands have a characteristic geometry depending on the cut of the substrate. We could explain their shapes by the assumption that growing BIG tends to form {1 1 0} facets.

  13. Effect of nitrogen surrounding gas and plasma assistance on nitrogen incorporation in a-C:N films by femtosecond pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bourquard, F.; Maddi, C.; Donnet, C.; Loir, A.-S.; Barnier, V.; Wolski, K.; Garrelie, F.

    2016-06-01

    In the context of nitrogen-rich amorphous carbon thin films ultrafast pulsed laser deposition from graphite targets in inert nitrogen or nitrogen plasma ambient, this study assesses the correlation between the ablation plume composition and dynamics and the thin films contents and structures. The use of both optical emission spectroscopy and spectrally resolved 2D imaging, coupled with intensified CCD temporal resolution, allows to precisely follow such species of the plume as CN and C2 molecules, from their apparition to their deposition on the substrate. The results show that carbon-nitrogen bonding arises at the early time of expansion with little changes in quantity thereafter. The key role of the DC-bias is in lowering the molecular weight of the ambient gas, thus easing molecules way toward the target and interfering with the chemical reaction for CN generation. Depending on the ambient pressure, these processes will have drastically different effects on the thin films properties and contents. This work thus explains the origin of high nitrogen contents in a-C:N thin films obtained using DC-bias, and proposes an easy in situ optical observation-based way to predict and look for the best conditions to maximize those contents in future work.

  14. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Li, Hui; Zhu, Yan-Yan; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-12-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

  15. Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz

    NASA Astrophysics Data System (ADS)

    Ning, Xi; Chen, Shuming; Zhang, Jinying; Huang, Hui; Wang, Lei

    2015-08-01

    Ba0.6Sr0.4TiO3 thin films with a thickness of 339 nm are deposited directly on the high resistivity silicon through pulsed laser deposition. Coplanar waveguides with a slot width of 4.5 μm are designed to extract the complex permittivity of ferroelectric thin film in the frequency range from 1 GHz to 110 GHz. A fast three-dimensional (3D) finite element method (FEM) model is proposed to implement the permittivity extraction based on the propagation-constant matching, i.e., narrowing the difference between measured and simulated propagation-constants by adjusting the changeable permittivity in the fast 3D FEM model. In order to reduce the calculation overhead, the quasi transverse electromagnetic mode and conformal mapping analysis are introduced to realize the adjusting. The relative difference between measured and simulated propagation-constants is defined to describe the precision of the result. Experimental results show that the relative difference is less than 1.1%. The relative dielectric permittivity of BST films equals 332.6 at 1 GHz and reduces to 240.1 at 110 GHz. The loss tangent is about 17.5% at 110 GHz.

  16. Structural and luminescence properties of yellow Y3Al5012:Ce3+ thin-film phosphors prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dejene, F. B.

    2016-04-01

    Recently oxide phosphors have gained much attention because of the variety of materials available and chemical stability as compared to sulphide phosphors. Y3Al5O12:Ce3+ crystal is an excellent host material which is able to compatibly accept divalent and/or trivalent activators from both rare earth and transition metal groups. It is well known that YAG is a highly efficient yellow phosphor. However, these phosphors in the form of thin films have not yet been fully realized due to technical difficulties. We prepared thin-film-type YAG phosphors on silicon (110) substrate using a pulsed laser deposition technique. The luminescent and structural properties of thin-film phosphors were monitored as a function of key processing parameter which is the deposition temperature. The surface morphology of the grown thin films was strongly affected by the growth temperature. Electron diffraction spectroscopy confirms the presence of the Y, Al, O and Si. Even though we could not obtain homogenous phases, by optimizing processing parameters, thin films with large homogenous areas and a high photoluminescence could be produced. XRD measurements revealed Y3Al5O12 structure when grown at temperatures from room temperature to 750 °C; however, other phases such as Y4Al2O9 and YAlO3 are observed as impurities. The PL results, which are in good agreement with the XRD data, showed that Y3Al5O12 phase was relatively dominant in the film deposited at 750 °C, so emission spectra are strong at around 570 nm.

  17. Cation non-stoichiometry in pulsed laser deposited Sr{sub 2+y}Fe{sub 1+x}Mo{sub 1-x}O₆ epitaxial films

    SciTech Connect

    Meyer, T. L.; Woodward, P. M.; Dixit, M.; Williams, R. E. A.; Susner, M. A.; Fraser, H. L.; McComb, D. W.; Sumption, M. D.; Lemberger, T. R.

    2014-07-07

    Sr₂FeMoO₆ (SFMO) films were grown on SrTiO₃ (100)- and (111)-oriented substrates via pulsed laser deposition (PLD). In order to study the fundamental characteristics of deposition, films were grown in two different PLD chambers. In chamber I, the best films were grown with a relatively long substrate-to-target distance (89 mm), high substrate temperature (850 °C), and low pressure (50 mTorr) in a 95% Ar/5% H₂ atmosphere. Although X-ray diffraction (XRD) measurements indicate these films are single phase, Rutherford Backscattering (RBS) measurements reveal considerable non-stoichiometry, corresponding to a Sr₂Fe{sub 1–x}Mo{sub 1+x}O₆ composition with x≅0.2–0.3. This level of non-stoichiometry results in inferior magnetic properties. In chamber II, the best films were grown with a much shorter substrate-to-target distance (38 mm), lower temperature (680 °C), and higher pressure (225 mTorr). XRD measurements show that the films are single phase, and RBS measurements indicate that they are nearly stoichiometric. The degree of ordering between Fe and Mo was dependent on both the temperature and pressure used during deposition, reaching a maximum order parameter of 85%. The saturation magnetization increases as the Fe/Mo ordering increases, reaching a maximum of 2.4 μB/f.u. Based on prior studies of bulk samples, one would expect a higher saturation magnetization for this degree of Fe/Mo order. The presence of extra strontium oxide layers in the form of Ruddlesden-Popper intergrowths appears to be responsible for the lower than expected saturation magnetization of these films.

  18. Generating Independent Preionizing Pulses for Lasers

    NASA Technical Reports Server (NTRS)

    Pacala, T. J.

    1986-01-01

    Simple pulse-coupling winding on saturable reactor core lets core act as pulse transformer, passing preionizing pulse from winding to tapered transmission line, then to laser. Laser prepared for independent firing pulse, which follows preionizing pulse. Winding is simple, light in weight, low in bulk and power consumption, and inexpensive.

  19. Coaxial short pulsed laser

    DOEpatents

    Nelson, M.A.; Davies, T.J.

    1975-08-01

    This invention relates to a laser system of rugged design suitable for use in a field environment. The laser itself is of coaxial design with a solid potting material filling the space between components. A reservoir is employed to provide a gas lasing medium between an electrode pair, each of which is connected to one of the coaxial conductors. (auth)

  20. Dark pulse generation in fiber lasers incorporating carbon nanotubes.

    PubMed

    Liu, H H; Chow, K K

    2014-12-01

    We demonstrate the generation of dark pulses from carbon nanotube (CNT) incorporated erbium-doped fiber ring lasers with net anomalous dispersion. A side-polished fiber coated with CNT layer by optically-driven deposition method is embedded into the laser in order to enhance the birefringence and nonlinearity of the laser cavity. The dual-wavelength domain-wall dark pulses are obtained from the developed CNT-incorporated fiber laser at a relatively low pump threshold of 50.6 mW. Dark pulses repeated at the fifth-order harmonic of the fundamental cavity frequency are observed by adjusting the intra-cavity polarization state.