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Sample records for pulsed laser deposited

  1. Pulsed laser deposition: Prospects for commercial deposition of epitaxial films

    SciTech Connect

    Muenchausen, R.E.

    1999-03-01

    Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique for the deposition of thin films. The vapor source is induced by the flash evaporation that occurs when a laser pulse of sufficient intensity (about 100 MW/cm{sup 2}) is absorbed by a target. In this paper the author briefly defines pulsed laser deposition, current applications, research directed at gaining a better understanding of the pulsed laser deposition process, and suggests some future directions to enable commercial applications.

  2. Nonequilibrium Interlayer Transport in Pulsed Laser Deposition

    SciTech Connect

    Tischler, Jonathan Zachary; Eres, Gyula; Larson, Ben C; Rouleau, Christopher M; Zschack, P.; Lowndes, Douglas H

    2006-01-01

    We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited SrTiO3. Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.

  3. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  4. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  5. Iridium thin films deposited via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Chen, Chenglin

    High purity Ir thin films for future applications as transition-edge sensors were deposited on Si (100) via pulsed laser deposition. The iridium deposition rate was investigated and found to have a high value with the pulsed laser power higher than 4.2×10 9 W/cm 2 . At this laser intensity range, the PLD Ir films were deposited at substrate temperature ranging from 100 to 700°C. Ir thin films' characteristics were investigated at both room temperature and low temperature with the emphasis on study of the effect of the substrate temperature during deposition on the structure and morphology of the films. The PLD films exhibited a (110) preferentially oriented polycrystalline structure. Their average grain size increased from about 30 to 110 nm as the deposition temperature was raised from 100 to 600°C. With a 700°C substrate temperature the grain size jumped to 500 nm. Iridium silicide was found in the film deposited at 700°C substrate temperature. This indicated a critical deposition temperature between 600 and 700°C. A 50 mK platform was built for low temperature measurements. At low temperature, the Residual Resistance Ratio (RRR) of the Ir thin films had a typical value of 1.50. A typical transition curve of the film showed a transition temperature higher and wider than expected.

  6. A new pulsed laser deposition technique: Scanning multi-component pulsed laser deposition method

    SciTech Connect

    Fischer, D.; Jansen, M.; Fuente, G. F. de la

    2012-04-15

    The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 deg. C.

  7. A new pulsed laser deposition technique: scanning multi-component pulsed laser deposition method.

    PubMed

    Fischer, D; de la Fuente, G F; Jansen, M

    2012-04-01

    The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 °C.

  8. 25 years of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; Ramachandra Rao, M. S.

    2014-01-01

    It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

  9. Hemocompatible, pulsed laser deposited coatings on polymers.

    PubMed

    Lackner, Juergen M; Waldhauser, Wolfgang; Major, Roman; Major, Boguslaw; Bruckert, Franz

    2010-02-01

    State-of-the-art non-thrombogenic blood contacting surfaces are based on heparin and struggle with the problem of bleeding. However, appropriate blood flow characteristics are essential for clinical application. Thus, there is increasing demand to develop new coating materials for improved human body acceptance. Materials deposited by vacuum coating techniques would be an excellent alternative if the coating temperatures can be kept low because of the applied substrate materials of low temperature resistance (polymers). Most of the recently used plasma-based deposition techniques cannot fulfill this demand. However, adequate film structure and high adhesion can be reached by the pulsed laser deposition at room temperature, which was developed to an industrial-scaled process at Laser Center Leoben. Here, this process is described in detail and the resulting structural film properties are shown for titanium, titanium nitride, titanium carbonitride, and diamond-like carbon on polyurethane, titanium and silicon substrates. Additionally, we present the biological response of blood cells and the kinetic mechanism of eukaryote cell attachment. In conclusion, high biological acceptance and distinct differences for the critical delamination shear stress were found for the coatings, indicating higher adhesion at higher carbon contents.

  10. Pulsed Laser Deposition of Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Leppert, Valerie Jean

    Recent applications of pulsed laser deposition to the growth of various types of thin films suggest that it may be successfully used for III-V semiconductors. The goal of this work is to characterize the growth of GaAs using PLD and to determine the scope of the technique for this material. Therefore, laser ablation of GaAs is characterized here using spectroscopic analysis of the optical emission lines from the laser plasma plume. Additionally, the influence of growth conditions on GaAs films grown on a range of substrates is examined. In-situ analysis of the GaAs plume revealed that atomic, rather than molecular, arsenic is a major constituent of the GaAs plume. This may explain why no arsenic overpressure was needed to grow stoichiometric material. Nonlinear behavior of Ga emission intensity with laser power density indicated that several ablation mechanisms may be at work. EDAX studies indicate that deposited material is stoichiometric. Single crystal GaAs was grown on GaAs, Si and InP using PLD. A deposition rate of 0.65 mu m/hr was obtained. Defects consisting of dislocations, twinning and stacking faults were observed. An increase in laser power density decreased the minimum temperature for good film growth. Films were smooth overall, but suffered from an occasional inclusion of macroparticulates. Methods for screening particles were examined. The optimum growth temperature for GaAs/GaAs growth was 470^circC, but good films could be obtained as low as 335^circ C. GaAs/Si underwent a transition from a (110) oriented film to single crystal (100) film at 470 ^circC. Photoluminescence was obtained for the GaAs/GaAs and GaAs/InP systems. Well oriented films of GaAs (110) on an amorphous substrate (fused silica) were obtained for the first time using PLD at temperatures as low as 288^ circC. The effects of deposition temperature, deposition time, background gas, annealing, MOCVD overlayer and shadow masking were examined.

  11. Nanosecond laser ablation for pulsed laser deposition of yttria

    NASA Astrophysics Data System (ADS)

    Sinha, Sucharita

    2013-09-01

    A thermal model to describe high-power nanosecond pulsed laser ablation of yttria (Y2O3) has been developed. This model simulates ablation of material occurring primarily through vaporization and also accounts for attenuation of the incident laser beam in the evolving vapor plume. Theoretical estimates of process features such as time evolution of target temperature distribution, melt depth and ablation rate and their dependence on laser parameters particularly for laser fluences in the range of 6 to 30 J/cm2 are investigated. Calculated maximum surface temperatures when compared with the estimated critical temperature for yttria indicate absence of explosive boiling at typical laser fluxes of 10 to 30 J/cm2. Material ejection in large fragments associated with explosive boiling of the target needs to be avoided when depositing thin films via the pulsed laser deposition (PLD) technique as it leads to coatings with high residual porosity and poor compaction restricting the protective quality of such corrosion-resistant yttria coatings. Our model calculations facilitate proper selection of laser parameters to be employed for deposition of PLD yttria corrosion-resistive coatings. Such coatings have been found to be highly effective in handling and containment of liquid uranium.

  12. Pulsed laser deposition of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  13. Wavelength Effects In Femtosecond Pulsed Laser Ablation And Deposition

    SciTech Connect

    Castillejo, Marta; Nalda, Rebeca de; Oujja, Mohamed; Sanz, Mikel

    2010-10-08

    Ultrafast pulsed laser irradiation of solid materials is highly attractive for the micro-and nanostructuring of substrates and for the fabrication of nanostructured deposits. Femtosecond laser pulses promote efficient material removal with reduced heat transfer and high deposition rates of nanometer scale particles free of microscopic particulates. Most of the studies to date have been performed with light pulses centered around the peak wavelength of the Titanium:Sapphire laser, around 800 nm. Analysis of the process over a broader range of wavelengths can provide important information about the processes involved and serve as experimental tests for advanced theoretical models. We report on our current investigations on the effect that laser wavelength of femtosecond pulses has on the superficial nanostructuring induced on biopolymer substrates, and on the characteristics of nanostructured deposits grown by pulsed laser deposition from semiconductor targets.

  14. Bismuth thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  15. Magnetron Sputtered Pulsed Laser Deposition Scale Up

    DTIC Science & Technology

    2003-08-14

    2:721-726 34 S. J. P. Laube and E. F. Stark, “ Artificial Intellegence in Process Control of Pulsed Laser Deposition”, Proceedings of...The model would be based on mathematical simulation of real process data, neural-networks, or other artificial intelligence methods based on in situ...Laube and E. F. Stark, Proc. Symp. Artificial Intel. Real Time Control, Valencia, Spain, 3-5 Oct. ,1994, p.159-163. International Federation of

  16. Boron carbon nitride films deposited by sequential pulses laser deposition

    NASA Astrophysics Data System (ADS)

    Dinescu, M.; Perrone, A.; Caricato, A. P.; Mirenghi, L.; Gerardi, C.; Ghica, C.; Frunza, L.

    1998-05-01

    In this paper, we report the successful growth of c-BCN thin films by reactive pulsed laser ablation (RPLA) of a rotating target (3 Hz) formed of two semidisks: one of h-BN and the other one of graphite, with the substrate at room temperature. The irradiations were performed in vacuum (10 -5 Pa) and in N 2 ambient gas (1-100 Pa) using a XeCl excimer laser ( λ=308 nm, τFWHM=30 ns) with a fluence of 5 J/cm 2. Series of 10,000 pulses at a repetition rate of 10 Hz were directed to target. Different analysis techniques pointed out the synthesis of h-BCN and c-BCN. Microhardness measurements at the deposited films evidence high values up to 2.9 GPa. Secondary ion mass spectroscopy (SIMS) profiles showed the presence of layers of 600-700 nm thickness, with uniform concentrations of B, C and N in the films. Uniform signals of BN and CN, which are related to the BCN bond, are also present. X-ray photoelectron spectroscopy (XPS) studies pointed out the BCN compound formation. The deconvolution of B 1s recorded spectra evidenced a strong peak (centered at 188 eV) assigned to B bonded in BC 2N; the N 1s and C 1s spectra also confirm the BCN formation. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analysis evidenced the presence of c-BCN phase (with crystallites of 30-80 nm) and h-BCN phase as well. The N 2 pressure strongly influenced the BCN formation and, consequently, the properties of the deposited films.

  17. Pulsed laser deposition vs. matrix assisted pulsed laser evaporation for growth of biodegradable polymer thin films

    NASA Astrophysics Data System (ADS)

    Mercado, A. L.; Allmond, C. E.; Hoekstra, J. G.; Fitz-Gerald, J. M.

    2005-08-01

    Thin films of poly (lactide-co-glycolide) (PLGA), a biodegradable polymer, were deposited on Si wafers by both conventional pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) using chloroform (CHCl3) as a matrix solvent. This research represents an initial study to investigate the deposition characteristics of each technique at comparable conditions to gain insight into the transport and degradation mechanisms of each approach. The deposited materials were characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (1H NMR), and gel permeation chromatography (GPC) with refractive index (RI) detection. While FTIR and NMR results do not show a measurable departure from the native, in sharp contrast GPC results show a significant change (up to 95%) in molecular weight for both deposition methods. This result makes it clear that it is possible to overlook substantial degradation when incomplete chemical analysis is conducted.

  18. Pulsed Laser Deposition of the Ni-Base Superalloy Films

    NASA Astrophysics Data System (ADS)

    Shin, Joonghan; Mazumder, Jyotirmoy

    2016-03-01

    Ni-base superalloy films were deposited on single-crystal (SC) Ni-base superalloy substrates from a target with the same alloy composition by pulsed laser deposition (PLD) technique. Microstructure and growth behavior of the films deposited were investigated by X-ray diffraction and scanning electron microscopy, and atomic force microscope. The homoepitaxial growth of the SC Ni-base superalloy film occurred at the 1123 K (850 °C) substrate temperature and 2 J/cm2 pulse energy. Films generally exhibited a strong polycrystalline characteristic as the substrate temperature and pulse energy increased. The SC film had a smooth surface. The measured root mean square roughness of the SC film surface was ~6 nm. Based on the Taguchi analysis, the substrate temperature and pulse energy were the most significant process parameters influencing the structural characteristics of the films. Also, the influence of the pulse repletion rate and deposition time was not found to be significant.

  19. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  20. Pulsed laser deposition of anatase thin films on textile substrates

    NASA Astrophysics Data System (ADS)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-01

    Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  1. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    DOEpatents

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  2. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    NASA Astrophysics Data System (ADS)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  3. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  4. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    SciTech Connect

    Singaravelu, Senthil R.; Klopf, John M.; Schriver, Kenneth E.; Park, HyeKyoung; Kelley, Michael J.; Haglund, Jr., Richard F.

    2013-08-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  5. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  6. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  7. Pulsed-laser deposition of crystalline Teflon (PTFE) films

    NASA Astrophysics Data System (ADS)

    Li, S. T.; Arenholz, E.; Heitz, J.; Bäuerle, D.

    1998-01-01

    Thin films of crystalline polytetrafluoroethylene (PTFE) were prepared by pulsed-laser deposition using 248 nm UV-excimer-laser radiation. Pressed powder pellets and bulk PTFE have been employed as target material. The films were analyzed by means of optical polarization microscopy, stylus profilometry, capacity measurements, XRD, and IR spectroscopy. The effect of substrate temperature Ts on the morphology and crystallinity of the films was studied. Films deposited from pressed powder targets at sufficiently high Ts consist mainly of spherulite-like microcrystallites. These films are continuous, pinhole-free, well adherent to the substrate, and have a composition which is similar to that of the target material. It is suggested that film formation is based on laser-assisted material transfer with subsequent melting and crystallization. They are superior to films deposited from PTFE bulk targets, cut from a solid rod, with respect to film morphology, deposition rate, film cohesion, and optical and electrical properties.

  8. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    NASA Astrophysics Data System (ADS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  9. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  10. Pulsed Laser Deposition of Nanoporous Cobalt Thin Films

    PubMed Central

    Jin, Chunming; Nori, Sudhakar; Wei, Wei; Aggarwal, Ravi; Kumar, Dhananjay; Narayan, Roger J.

    2013-01-01

    Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ~5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications. PMID:19198344

  11. Pulsed laser deposition of nanoporous cobalt thin films.

    PubMed

    Jin, Chunming; Nori, Sudhakar; Wei, Wei; Aggarwal, Ravi; Kumar, Dhananjay; Narayan, Roger J

    2008-11-01

    Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be approsimately 5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications.

  12. Crystallographic texture in pulsed laser deposited hydroxyapatite bioceramic coatings

    PubMed Central

    Kim, Hyunbin; Camata, Renato P.; Lee, Sukbin; Rohrer, Gregory S.; Rollett, Anthony D.; Vohra, Yogesh K.

    2008-01-01

    The orientation texture of pulsed laser deposited hydroxyapatite coatings was studied by X-ray diffraction techniques. Increasing the laser energy density of the KrF excimer laser used in the deposition process from 5 to 7 J/cm2 increases the tendency for the c-axes of the hydroxyapatite grains to be aligned perpendicular to the substrate. This preferred orientation is most pronounced when the incidence direction of the plume is normal to the substrate. Orientation texture of the hydroxyapatite grains in the coatings is associated with the highly directional and energetic nature of the ablation plume. Anisotropic stresses, transport of hydroxyl groups and dehydroxylation effects during deposition all seem to play important roles in the texture development. PMID:18563207

  13. History and current status of commercial pulsed laser deposition equipment

    NASA Astrophysics Data System (ADS)

    Greer, James A.

    2014-01-01

    This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm2 up to 10 m2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R&D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications.

  14. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  15. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  16. Fabrication of Au nanostructures by pulsed laser deposition in air

    NASA Astrophysics Data System (ADS)

    Nikov, Rumen G.; Dikovska, Anna Og.; Nedyalkov, Nikolay N.; Atanasov, Petar A.

    2016-01-01

    Results on fabrication of Au nanostructures by laser ablation in open air are presented. The ablation of the Au target is performed in air environment by nanosecond laser pulses delivered by Nd:YAG laser system operated at λ = 355 nm. Due to the high density of the ambient atmosphere, the intensive collisions of the plume spices result in formation of nanoparticles and aggregates by condensation close to the target. The produced nanoagregates are deposited on a quartz substrate where grow in a specific nanostructure. Diagnostics of the laser-generated plasma for the laser fluences used in this study is performed. Study based on change of ambient conditions shows that the increase of the air pressure from 10 Torr to atmospheric one leads to transition from thin film to porous structures. It is found that the surface morphology of the structures produced by pulsed laser deposition (PLD) in open air strongly depends on the substrate-target distance. The electrical properties of the obtained structures are studied by measurement of their electrical resistance. It is found that the conductivity of the structures strongly depends on their morphology. The fabricated structures have potential for application in the field of electronics and sensors.

  17. Pulse laser assisted composite electroless deposit to prepare ceramic coating

    NASA Astrophysics Data System (ADS)

    Zhang, Qunli; Yao, Jianhua; Pan, Yi

    The Ni-P-nano Al2O3 plating layer was prepared on 45 steel by composite electroless deposit, and then hardened by pulse Nd:YAG laser. The surface morphology, microstructure, phase composition, and hardness were investigated respectively. The results show that there is a firm metallurgical bonding between the treated layer and the substrate. Hard phases such as Al5FeNi, FeNi and Fe0.64Ni0.36 form on the surface of composite electroless deposit layer after laser treatment, which contributes to the hardening of coating through fine-crystal strengthening and dispersion strengthening. The hardness of laser treated layer is 4.5 times higher than that of the substrate.

  18. Pulsed laser deposition for the synthesis of monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Mohammed, A.; Nakamura, H.; Wochner, P.; Ibrahimkutty, S.; Schulz, A.; Müller, K.; Starke, U.; Stuhlhofer, B.; Cristiani, G.; Logvenov, G.; Takagi, H.

    2017-08-01

    Atomically thin films of WSe2 from one monolayer up to 8 layers were deposited on an Al2O3 r-cut ( 1 1 ¯ 02 ) substrate using a hybrid-Pulsed Laser Deposition (PLD) system where a laser ablation of pure W is combined with a flux of Se. Specular X-ray reflectivities of films were analysed and were consistent with the expected thickness. Raman measurement and atomic force microscopy confirmed the formation of a WSe2 monolayer and its spatial homogeneity over the substrate. Grazing-incidence X-ray diffraction uncovered an in-plane texture in which WSe2 [ 10 1 ¯ 0 ] preferentially aligned with Al2O3 [ 11 2 ¯ 0 ]. These results present a potential to create 2D transition metal dichalcogenides by PLD, where the growth kinetics can be steered in contrast to common growth techniques like chemical vapor deposition and molecular beam epitaxy.

  19. Pulsed laser deposition of hydroxyapatite film on laser gas nitriding NiTi substrate

    NASA Astrophysics Data System (ADS)

    Yang, S.; Xing, W.; Man, H. C.

    2009-09-01

    A hydroxyapatite (HA) film was deposited on laser gas nitriding (LGN) NiTi alloy substrate using pulsed laser deposition technique. TiN dendrite prepared by LGN provided a higher number of nucleation sites for HA film deposition, which resulted in that a lot number of HA particles were deposited on TiN dendrites. Moreover, the rough LGN surface could make the interface adhesive strength between HA film and substrate increase as compared with that on bare NiTi substrate.

  20. Pulsed Nd:YAG laser deposition of ruthenium thin films

    NASA Astrophysics Data System (ADS)

    Wai Keat, Lee

    Ruthenium (Ru) is one of the noble air-stable transition metals, which has excellent thermal chemical stability, low electrical resistivity, and relatively high work function near the valence band edge of Si. Recently, Ru has been introduced into the semiconductor industries as a result of the interesting chemical, physical, and electrical properties it possessed. So far, investigations of ruthenium films have been centered on material properties of Ru layers, growth using direct current/radiofrequency (DC/RF) magnetron sputtering, and chemical vapor deposition. However, comparatively little work has been carried out using the pulsed laser deposition (PLD) technique. In this research work, the growth of Ru film using PLD was investigated. The Ru films were deposited on silicon (Si) substrates employing 355 nm pulsed Nd:YAG laser source. Laser fluence ranged from 2 to 8 J/cm2 was employed, with deposition duration from 5 to 180 minutes under high vacuum condition. Optical emission spectroscopy (OES) was employed to study the species and purity of the plasma during the deposition. It was observed that intensity of the Ru species spectra increased with increasing laser fluence and more prominent after laser fluence of 4 J/cm2. No impurities were observed. Film thicknesses ranging from 15 to 280 nm were obtained. As the deposition duration and the laser fluence increased, the thickness of the deposited Ru films increased. It is observed that there was a critical deposition duration value, and this value increases as the laser fluence increased. X-ray diffraction (XRD) spectra showed Ru with crystalline orientation of (101), (100), and (002) peaks. The XRD results revealed an enhanced diffraction peak when film thickness increased, under all laser fluences. Grain sizes were deduced from the XRD data by using the Scherrer's formula and the values fall in the range of 20 to 35 nm for the film thickness covering from 50 nm to 250 nm. Besides, the electrical properties of

  1. Femtosecond pulsed laser deposition of biological and biocompatible thin layers

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Smausz, T.; Kecskeméti, G.; Klini, A.; Bor, Zs.

    2007-07-01

    In our study we investigate and report the femtosecond pulsed laser deposition of biological and biocompatible materials. Teflon, polyhydroxybutyrate, polyglycolic-acid, pepsin and tooth in the form of pressed pellets were used as target materials. Thin layers were deposited using pulses from a femtosecond KrF excimer laser system (FWHM = 450 fs, λ = 248 nm, f = 10 Hz) at different fluences: 0.6, 0.9, 1.6, 2.2, 2.8 and 3.5 J/cm 2, respectively. Potassium bromide were used as substrates for diagnostic measurements of the films on a FTIR spectrometer. The pressure in the PLD chamber was 1 × 10 -3 Pa, and in the case of tooth and Teflon the substrates were heated at 250 °C. Under the optimized conditions the chemical structure of the deposited materials seemed to be largely preserved as evidenced by the corresponding IR spectra. The polyglycolic-acid films showed new spectral features indicating considerable morphological changes during PLD. Surface structure and thickness of the layers deposited on Si substrates were examined by an atomic force microscopy (AFM) and a surface profilometer. An empirical model has been elaborated for the description of the femtosecond PLD process. According to this the laser photons are absorbed in the surface layer of target resulting in chemical dissociation of molecules. The fast decomposition causes explosion-like gas expansion generating recoil forces which can tear off and accelerate solid particles. These grains containing target molecules without any chemical damages are ejected from the target and deposited onto the substrate forming a thin layer.

  2. Soft X-Ray Optics by Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E.

    1996-01-01

    Mo/Si and C/Co multilayers for soft x-ray optics were designed for spectral regions of interest in possible applications. Fabrication was effected by Pulsed Laser Deposition using Nd:YAG (355 nm) or excimer (248 nm) lasers in order to evaluate the suitability of this technique. Results for Mo/Si structures were not considered satisfactory due mainly to problems with particulate production and target surface modification during Si ablation. These problems may be alleviated by a two-wavelength approach, using separate lasers for each target. Results for C/Co multilayers are much more encouraging, since indication of good layering was observed for extremely thin layers. We expect to continue investigating this possibility. In order to compete with traditional PVD techniques, it is necessary to achieve film coverage uniformity over large enough areas. It was shown that this is feasible, and novel means of achieving it were devised.

  3. Thermochromic VO2 on Zinnwaldite Mica by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mathevula, L.; Ngom, B. D.; Kotsedi, L.; Sechogela, P.; Doyle, T. B.; Ghouti, M.; Maaza, M.

    2014-09-01

    VO2 thin films have been deposited by pulsed laser deposition on Zinnwaldite Mica substrates. The crystal structure, chemical composition, morphology were determined and the semiconductor/metal transition (SMT) properties of the deposited films were investigated. Without any post annealing, the films exhibit a textured nature with a VO2 (0 1 1) preferred crystallographic orientation and an elevated thermal variation of the electric resistance ratio RS/RM through the SMT at T ≈ 68 °C of the order of 104 and a narrow ∼7 °C hysteresis. In addition, the growth of the VO2 crystallites seem to be governed likely by a Volmer-Weber or Stranski-Krastanov mechanisms and certainly not a Frank-van Der Merwe process.

  4. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  5. Resonant infrared pulsed laser deposition of a polyimide precursor

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2007-04-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

  6. Matrix assisted pulsed laser deposition of melanin thin films

    NASA Astrophysics Data System (ADS)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  7. Soft x ray optics by pulsed laser deposition

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E.

    1994-01-01

    A series of molybdenum thin film depositions by PLD (Pulsed Laser Deposition) have been carried out, seeking appropriate conditions for multilayer fabrication. Green (532 nm) and UV (355 nm) light pulses, in a wide range of fluences, were used. Relatively large fluences (in comparison with Si) are required to cause evaporation of molybdenum. The optical penetration depths and reflectivities for Mo at these two wavelengths are comparable, which means that results should be, and do appear to be similar for equal fluences. For all fluences above threshold used, a large number of incandescent particles is ejected by the target (either a standard Mo sputtering target or a Mo sheet were tried), together with the plasma plume. Most of these particles are clearly seen to bounce off the substrate. The films were observed with light microscopy using Nomarski and darkfield techniques. There is no evidence of large debris. Smooth films plus micron-sized droplets are usually seen. The concentration of these droplets embedded in the film appears not to vary strongly with the laser fluence employed. Additional characterization with SEM and XRD is under way.

  8. Cubic Structure and Cation Disordering in Ybco Thin Film Deposited by High Speed Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Suh, Jeong-Dae; Sung, Gun Yong; Kang, Kwang Yong

    We have investigated the crystalline structure of high rate deposited YBa2Cu3Ox thin films prepared by high speed pulsed laser deposition. A cation disordered cubic structure with lattice parameter of 0.39 nm was found in YBCO thin film deposited at 12.2 nm/s deposition rate and 650°C substrate temperature conditions. The short range ordered cubic YBa2Cu3Ox thin film growth at high deposition rate was explained by the short migration length of Y and Ba cation atoms owing to the high incident flux rate.

  9. Indomethacin nanoparticles directly deposited on the fluidized particulate excipient by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nagare, Sanshiro; Senna, Mamoru

    2004-12-01

    Nanoparticles of indomethacin (IM), a sparingly soluble drug in water, were prepared by pulsed laser deposition with Nd: YAG laser at 1064 nm. Variation of the deposition rate (DR) with various experimental conditions, such as species and pressure of the background gas, and laser fluence, was discussed. We obtained highest DR, 2.7 μg/cm2min, under He at 100 Pa with the laser fluence of 25 J/cm2. In the deposited solid product, no trace of drug decomposition was observed by HPLC. Deposition of IM nanoparticles was achieved on the fluidized excipient, potato starch particles of 20 μm regime. By TEM observation and zeta potential distribution measurement, we confirmed that surface of excipient particles was fully covered by nanoparticles of IM. Thus, the present method enables us a new method of one-step preparation of drug-excipient nanocomposites to eliminate tedious problems associated with nanoparticles handling.

  10. Pulsed laser deposition of compact high adhesion polytetrafluoroethylene thin films

    NASA Astrophysics Data System (ADS)

    Smausz, Tomi; Hopp, Béla; Kresz, Norbert

    2002-08-01

    Polytetrafluoroethylene (PTFE) thin films were prepared from pressed powder pellets via pulsed laser deposition by using ArF (193 nm) excimer laser. The applied laser fluences were in the 1.6-10 J cm-2 range, the substrate temperature was varied between 27°C and 250°C and post-annealing of the films was carried out in air at temperatures between 320°C and 500°C. Films deposited at 250°C substrate temperature were found to be stoichiometric while those prepared at lower temperatures were fluorine deficient. Morphological analyses proved that the film thickness did not significantly depend on the substrate temperature and the post annealing at 500°C resulted in a thickness reduction of approximately 50%. It was demonstrated that the films prepared at 8.2 J cm-2 fluence and annealed at 500°C followed by cooling at 1°C min-1 rate were compact, pinhole-free layers. The adherence of films to the substrates was determined by tensile strength measurements. Tensile strength values up to 2.4 MPa were obtained. These properties are of great significance when PTFE films are fabricated for the purpose of protecting coatings.

  11. Nanostructuring and texturing of pulsed laser deposited hydroxyapatite thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hyunbin; Catledge, Shane; Vohra, Yogesh; Camata, Renato; Lacefield, William

    2003-03-01

    Hydroxyapatite (HA) [Ca_10(PO_4)_6(OH)_2] is commonly deposited onto orthopedic and dental metallic implants to speed up bone formation around devices, allowing earlier stabilization in a patient. Pulsed laser deposition (PLD) is a suitable means of placing thin HA films on these implants because of its control over stoichiometry, crystallinity, and nanostructure. These characteristics determine the mechanical properties of the films that must be optimized to improve the performance of load-bearing implants and other devices that undergo bone insertion. We have used PLD to produce nanostructured and preferentially oriented HA films and evaluated their mechanical properties. Pure, highly crystalline HA films on Ti-6Al-4V substrates were obtained using a KrF excimer laser (248nm) with energy density of 4-8 J/cm^2 and deposition temperature of 500-700^rcC. Scanning electron and atomic force microscopies reveal that our careful manipulation of energy density and substrate temperature has led to films made up of HA grains in the nanometer scale. Broadening of x-ray diffraction peaks as a function of deposition temperature suggests it may be possible to control the film nanostructure to a great extent. X-ray diffraction also shows that as the laser energy density is increased in the 4-8 J/cm^2 range, the hexagonal HA films become preferentially oriented along the c-axis perpendicular to the substrate. Texture, nanostructure, and phase make-up all significantly influence the mechanical properties. We will discuss how each of these factors affects hardness and Young's modulus of the HA films as measured by nanoindentation.

  12. Laser surface modification of titanium substrate for pulsed laser deposition of highly adherent hydroxyapatite.

    PubMed

    Rajesh, P; Muraleedharan, C V; Komath, Manoj; Varma, Harikrishna

    2011-07-01

    Biomedical implant devices made out of titanium and its alloys are benefited by a modified surface or a bioactive coating to enhance bone bonding ability and to function effectively in vivo for the intended period of time. In this respect hydroxyapatite coating developed through pulsed laser deposition is a promising approach. Since the success of the bioactive ceramic coated implant depends mainly on the substrate-coating strength; an attempt has been made to produce micro patterned surface structure on titanium substrate for adherent hydroxyapatite coating. A pulsed Nd-YAG laser beam (355 nm) with 10 Hz repetition rate was used for surface treatment of titanium as well as hydroxyapatite deposition. The unfocussed laser beam was used to modify the substrate surface with 500-18,000 laser pulses while keeping the polished substrate in water. Hydroxyapatite deposition was done in a vacuum deposition chamber at 400 °C with the focused laser beam under 1 × 10⁻³ mbar oxygen pressure. Deposits were analyzed to understand the physico-chemical, morphological and mechanical characteristics. The obtained substrate and coating surface morphology indicates that laser treatment method can provide controlled micro-topography. Scratch test analysis and microindentation hardness values of coating on laser treated substrate indicate higher mechanical adhesion with respect to coatings on untreated substrates.

  13. Reactive pulsed laser deposition of gold nitride thin films

    NASA Astrophysics Data System (ADS)

    Caricato, A. P.; Fernàndez, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, F.; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Y. M.; Azoulay, J.; Meda, L.

    2007-07-01

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10 -8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 -8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.

  14. Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition

    SciTech Connect

    Kolagani, R; Friedrich, S

    2008-06-25

    The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

  15. Friction behavior of pulsed laser deposited tungsten disulfide films

    NASA Astrophysics Data System (ADS)

    Prasad, S. V.; Zabinski, J. S.; McDevitt, N. T.

    1995-01-01

    This reseach describes the friction behavior of pulsed laser-deposited tungsten disulfide films. A ball-on-flat apparatus, in which a 440C stainless steel ball was held on rotating disk coated with a WS2 film, was used as the test configuration. Friction measurements were made in dry nitrogen and in laboratory air. Wear surfaces were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The friction coefficient of the film in dry nitrogen was 0.04, and in laboratory air it rose to between 0.10 and 0.15. In the dry nitrogen case, friction induced some degree of crystallinity into the otherwise amorphous film, while rubbing in air mostly resulted in oxidation of the film. Transfer films formed in a dry environment were smooth, tenacious and formed in air were patchy and powdery in nature.

  16. Laser energy density, structure and properties of pulsed-laser deposited zinc oxide films

    NASA Astrophysics Data System (ADS)

    Tsoutsouva, M. G.; Panagopoulos, C. N.; Kompitsas, M.

    2011-05-01

    Zinc oxide thin films were deposited on soda lime glass substrates by pulsed laser deposition in an oxygen-reactive atmosphere at 20 Pa and a constant substrate temperature at 300 °C. A pulsed KrF excimer laser, operated at 248 nm with pulse duration 10 ns, was used to ablate the ceramic zinc oxide target. The structure, the optical and electrical properties of the as-deposited films were studied in dependence of the laser energy density in the 1.2-2.8 J/cm 2 range, with the aid of X-ray Diffraction, Atomic Force Microscope, Transmission Spectroscopy techniques, and the Van der Pauw method, respectively. The results indicated that the structural and optical properties of the zinc oxide films were improved by increasing the laser energy density of the ablating laser. The surface roughness of the zinc oxide film increased with the decrease of laser energy density and both the optical bang gap and the electrical resistivity of the film were significantly affected by the laser energy density.

  17. Investigation of new stilbazolium dye thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sotirov, S.; Todorova, M.; Draganov, M.; Penchev, P.; Bakalska, R.; Serbezov, V.

    2013-03-01

    In present work we report the analysis of thin films and targets from new stilbazolium dye E-4-(2-(4- hydroxynaphthalen-1-yl)vinyl)-1-octylquinolinium iodide (D1) deposited by Pulsed Laser Deposition (PLD) technique using high power UV TEA N2 laser. The thin films are deposited onto substrates - KBr, 316L SS alloy, optical glass and aluminum foil. The films were characterized by FTIR spectroscopy, bright field microscopy, fluorescence microscopy and atomic force microscopy (AFM) analysis. FTIR spectroscopic analysis of thin films and target material shows small differences between deposited films and native substance. The films are found to be homogeneous by AFM results and without any cracks and droplets on the surfaces. The present study demonstrates the ability of PLD technique to provide thin films from new stilbazolium dyes with good quality when they are applied as non-linear optical (NLO) organic materials on different type of substrates.

  18. Properties of pulsed laser deposited fluorinated hydroxyapatite films on titanium

    SciTech Connect

    Rau, J.V.; Smirnov, V.V.; Laureti, S.; Generosi, A.; Varvaro, G.; Fosca, M.; Ferro, D.; Cesaro, S. Nunziante; Albertini, V. Rossi; Barinov, S.M.

    2010-09-15

    Fluorinated hydroxyapatite coated titanium was investigated for application as implant coating for bone substitute materials in orthopaedics and dentistry. Pulsed laser deposition technique was used for films preparation. Fluorinated hydroxyapatite target composition, Ca{sub 10}(PO{sub 4}){sub 6}F{sub 1.37}(OH){sub 0.63}, was maintained at 2 J/cm{sup 2} of laser fluence and 500-600 {sup o}C of the substrate temperature. Prepared films had a compact microstructure, composed of spherical micrometric-size aggregates. The average surface roughness resulted to be of 3 nm for the film grown at 500 {sup o}C and of 10 nm for that grown at 600 {sup o}C, showing that the temperature increase did not favour the growth of a more fine granulated surface. The films were polycrystalline with no preferential growth orientation. The films grown at 500-600 {sup o}C were about 8 {mu}m thick and possessed a hardness of 12-13 GPa. Lower or higher substrate temperature provides the possibility to obtain coatings with different fine texture and roughness, thus tayloring them for various applications.

  19. Pulsed laser deposition of strontium-substituted hydroxyapatite coatings

    NASA Astrophysics Data System (ADS)

    Pereiro, I.; Rodríguez-Valencia, C.; Serra, C.; Solla, E. L.; Serra, J.; González, P.

    2012-09-01

    The growing evidence of the beneficial role of strontium in bone has increased the interest of developing strontium-containing biomaterials for medical applications, and specifically biocompatible coatings that can be deposited on metallic implants to benefit from their load-bearing capabilities. In this work, strontium-substituted hydroxyapatite (Sr-HA) coatings have been fabricated by pulsed laser deposition (PLD) from initial targets obtained after mixing and compacting commercial HA and SrCO3 powders in different proportions. The films thus fabricated were then structurally, morphologically and chemically characterized using scanning electron microscopy, optical profilometry, X-ray diffraction, Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The macroscopic morphology of the films presented in all cases equivalent spherical shaped aggregates of typical calcium phosphate coatings. The results reveal, however, the incorporation of Sr2+ and carbonate groups in the coatings as a function of the SrCO3 content in the ablation target, being the incorporation of Sr2+ a linear phenomenon that is accompanied by a similarly linear withdrawal of Ca2+. The role of Sr2+ in the modification of the HA structure and a possible mechanism of substitution of Sr2+ atoms in place of Ca2+ atoms are discussed.

  20. Human osteoblast response to pulsed laser deposited calcium phosphate coatings.

    PubMed

    Bigi, A; Bracci, B; Cuisinier, F; Elkaim, R; Fini, M; Mayer, I; Mihailescu, I N; Socol, G; Sturba, L; Torricelli, P

    2005-05-01

    Octacalcium phosphate (OCP) and Mn(2+)-doped carbonate hydroxyapatite (Mn-CHA) thin films were deposited on pure, highly polished and chemically etched Ti substrates with pulsed laser deposition. The coatings exhibit different composition, crystallinity and morphology that might affect their osteoconductivity. Human osteoblasts were cultured on the surfaces of OCP and Mn-CHA thin films, and the cell attachment, proliferation and differentiation were evaluated up to 21 days. The cells showed a normal morphology and a very good rate of proliferation and viability in every experimental time. Alkaline phosphatase activity was always higher than the control and Ti groups. From days 7 to 21 collagen type I production was higher in comparison with control and Ti groups. The level of transforming growth factor beta 1 (TGF-beta1) was lower at 3 and 7 days, but reached the highest values during following experimental times (14 and 21 days). Our data demonstrate that both calcium phosphate coatings favour osteoblasts proliferation, activation of their metabolism and differentiation.

  1. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Duta, L.; Oktar, F. N.; Stan, G. E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I. N.

    2013-01-01

    We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  2. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  3. Pulsed laser deposition and characterizations of pyrochlore iridate thin films

    NASA Astrophysics Data System (ADS)

    Starr, Matthew; Aviles-Acosta, Jaime; Xie, Yuantao; Zhu, Wenka; Li, Zhen; Chen, Aiping; Li, Nan; Tao, Chenggang; Jia, Quanxi; Heremans, J. J.; Zhang, S. X.

    Pyrochlore iridates have attracted growing interest in recent years because of their potential to realize novel topological phases. While most of the previous studies have focused on polycrystalline and single crystalline bulk samples, epitaxial thin films offer a unique platform for controllable tuning of material parameters such as oxygen stoichiometry and elastic strain to achieve new electronic states. In this talk, we will present the growth and characterizations of epitaxial thin films of pyrochlore Y2Ir2O7 and Bi2Ir2O7 that are predicted to host topologically non-trivial states. The iridate thin films were grown by pulsed laser deposition at different conditions, and a narrow window for epitaxial growth was determined. Characterizations of crystalline structures were performed using X-ray diffraction and transmission electron microscopy to establish a growth parameter-structure phase diagram. The compositions of thin films were determined by energy dispersive X-ray spectroscopy, and the surface morphologies were characterized using atomic force microscopy and scanning tunneling microscopy. Magneto-transport studies indicate a strong dependence of transport properties on the oxygen stoichiometry and the film thickness.

  4. Ion mixing of pulsed laser deposited hydroxylapatite (HA)

    SciTech Connect

    Alford, T.L.; Russell, S.W.; Pizziconi, V.B.; Mayer, J.W.; Levine, T.E.; Nastasi, M.; Cotell, C.M.; Auyeung, R.C.Y.

    1995-12-31

    Hydroxylapatite (HA) is a calcium-phosphate-bioceramic material which has drawn much attention due to its excellent biocompatibility and tissue bioactivity properties. The use of ion-beam techniques to enhance selected properties of bioactive materials, such as the adhesion of hydroxylapatite (HA) coatings on titanium-based substrates has been investigated. In this study, very thin HA films on titanium substrates were created by pulsed laser deposition techniques. Ion irradiations were carried out using 260-keV argon ions, with fluences of 0.25--50 {times} 10{sup 15} ions/cm{sup 2}, and at room temperature. Rutherford backscattering spectrometry was used to evaluate sample composition before and after irradiation. The amount of mixing was quantified by the mixing rate (the amount of atomic displacement due to an irradiation fluence). This pilot data indicates that mixing was evident after sufficient ion irradiation. The ramification of this preliminary study has provided a quantitative measure of ion mixing as a potential prosthetic biomaterial surface modification technique.

  5. Effects of Technical Parameters on the Pulsed Laser Deposited Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Zhao, Yafan; Chen, Chuanzhong; Song, Mingda; Ma, Jie; Wang, Diangang

    Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of ferroelectric films. Effects of technical parameters on the pulsed laser deposited ferroelectric films, including substrate temperature, oxygen pressure, post-annealing, buffer layer, target composition, energy density, wavelength, target-to-substrate distance, and laser pulse rate, are systematically reviewed in order to optimize these parameters. Processing-microstructure-property relationships of ferroelectric films by PLD are discussed. The application prospect is pointed as well.

  6. Understanding the deposition mechanism of pulsed laser deposited B-C films using dual-targets

    SciTech Connect

    Zhang, Song; He, Zhiqiang; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng; Ji, Xiaoli; Lu, Wenzhong

    2014-04-21

    Boron carbide thin films with stoichiometry (boron-carbon atomic ratio) range of 0.1 ∼ 8.9 were fabricated via pulsed laser deposition by using boron-carbon dual-targets. However, this experimental data on stoichiometry were smaller than the computer simulation values. The discrepancy was investigated by studies on composition and microstructure of the thin films and targets by scanning electron microscopy, excitation laser Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the boron liquid droplets were formed by phase explosion after laser irradiation on boron sector. Part of the boron droplets would be lost via ejection in the direction of laser beam, which is tilted 45° to the surface of substrate.

  7. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Antonova, K.; Duta, L.; Szekeres, A.; Stan, G. E.; Mihailescu, I. N.; Anastasescu, M.; Stroescu, H.; Gartner, M.

    2017-02-01

    Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A1LO mode frequency was analysed and connected to the orientation of the particles' optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers' properties is discussed on this basis.

  8. thin films prepared by pulsed laser deposition on different substrates

    NASA Astrophysics Data System (ADS)

    Navasery, M.; Halim, S. A.; Dehzangi, A.; Soltani, N.; Bahmanrokh, G.; Erfani H, M.; Kamalianfar, A.; Pan, K. Y.; Chang, S. C.; Chen, S. K.; Lim, K. P.; Awang Kechik, M. M.

    2014-09-01

    Perovskite manganite La2/3Ca1/3MnO3 thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal-insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature ( T P) have been fitted with the relation , indicating that the electron-electron scattering affects the conduction of these materials. The high-temperature resistivity data ( T > T P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N ( E F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn-O-Mn bond angle, which decreases the double exchange coupling of Mn3+-O2-Mn4+ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.

  9. Pulsed laser deposition of transition metal oxides for secondary batteries

    SciTech Connect

    Striebel, K.A.; Deng, C.Z.; Cairns, E.J.

    1995-12-31

    Pulsed laser deposition has been used to prepare thin films of several complex metal oxides of significance in secondary batteries from a single stoichiometric target with a substrate temperature of 600 C in the presence of 200 mtorr O{sub 2}. Films of the candidate bifunctional air electrocatalysts, for metal air batteries, La{sub 0.6}Ca{sub 0.4}CoO{sub 3}, La{sub 0.6}Sr{sub 0.4}CoO{sub 3}, La{sub 0.6}Ca{sub 0.4}MnO{sub 3} and La{sub 0.6}Sr{sub 0.4}MnO{sub 3} were prepared on glassy carbon substrates. Glassy carbon was found to either erode during the ablation process (with the cobaltates) or cause film cracking after deposition because of its extremely low coefficient of thermal expansion. The use of stainless steel substrates yielded 0.3 {micro}m-thick dense films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} and La{sub 0.6}Ca{sub 0.4}MnO{sub 3} which were suitable for electrochemical measurements in concentrated alkaline electrolytes. LiMn{sub 2}O{sub 4} and LiCoO{sub 2} films were prepared at thickness` of 0.3 {micro}m and 1.5 {micro}m. The 0.3 {micro}m-thick films delivered 176 mC/cm{sup 2}-{micro}m and 323 mC/cm{sup 2} for LiMn{sub 2}O{sub 4} and LiCoO{sub 2}, respectively, in 1 M LiClO{sub 4}/PC.

  10. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    SciTech Connect

    Geohegan, D.B.

    1994-09-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

  11. Pulsed Laser Deposition of YBCO With Yttrium Oxide Buffer Layers (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0092 PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT) Paul N. Barnes, Timothy J. Haugan...Paper Postprint 01 January 2002 – 01 January 2004 4. TITLE AND SUBTITLE PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT...Textured metallic substrate based HTS coated conductors with the YBCO /CeO2/YSZ/CeO2/Ni architecture have already been shown to exhibit high current

  12. Vitroceramic interface deposited on titanium substrate by pulsed laser deposition method.

    PubMed

    Voicu, Georgeta; Miu, Dana; Dogaru, Ionut; Jinga, Sorin Ion; Busuioc, Cristina

    2016-08-30

    Pulsed laser deposition (PLD) method was used to obtain biovitroceramic thin film coatings on titanium substrates. The composition of the targets was selected from SiO2-CaO-P2O5-(CaF2) systems and the corresponding masses were prepared using the sol-gel method. The depositions were performed in oxygen atmosphere (100mTorr), while the substrates were heated at 400°C. The PLD deposited films were analysed through different experimental techniques: X-ray diffraction, scanning (SEM, EDX) and transmission (HRTEM, SAED) electron microscopy and infra-red spectroscopy coupled with optical microscopy. They were also biologically tested by in vitro cell culture and the contact angle was determined. The bioevaluation results indicate a high biocompatibilty of the obtained materials, demonstrating their potential use for biomedical applications. Copyright © 2015 Elsevier B.V. All rights reserved.

  13. Tb and Ce Doped Y123 Films Processed by Pulsed Laser Deposition

    DTIC Science & Technology

    2004-05-01

    onto SrTiO3 single crystal substrates by pulsed laser ablation. Doped YBCO films were characterized for Tc, magnetic field dependence of Jc (at 77 K...AFRL-PR-WP-TP-2006-221 Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION Joseph W. Kell, Timothy J. Haugan, Mary Frances Locke...From - To) 05/10/2003 — 05/10/2004 4. TITLE AND SUBTITLE Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION . 5a. CONTRACT NUMBER In

  14. Resonant Infrared Matrix Assisted Pulsed Laser Deposition of Polymers: Improving the Morphology of As-Deposited Films

    NASA Astrophysics Data System (ADS)

    Bubb, Daniel; Papantonakis, Michael; Collins, Brian; Brookes, Elijah; Wood, Joshua; Gurudas, Ullas

    2008-03-01

    Resonant infrared matrix assisted pulsed laser deposition has been used to deposit thin films of PMMA, a widely used industrial polymer. This technique is similar to conventional pulsed laser deposition, except that the polymer to be deposited is dissolved in a solvent and the solution is frozen before ablation in a vacuum chamber. The laser wavelength is absorbed by a vibrational band in the frozen matrix. The polymer lands on the substrate to form a film, while the solvent is pumped away. Our preliminary results show that the surface roughness of the as-deposited films depends strongly on the differential solubility radius, as defined by Hansen solubility parameters of the solvent and the solubility radius of the polymer. Our results will be compared with computational and experimental studies of the same polymer using a KrF (248 nm) laser. The ejection mechanism will be discussed as well as the implications of these results for the deposition of smooth high quality films.

  15. Highly Textured FeCo Thin Films Deposited by Low Temperature Pulsed Laser Deposition.

    PubMed

    Varvaro, Gaspare; Peddis, Davide; Barucca, Gianni; Mengucci, Paolo; Rodionova, Valeria; Chichay, Ksenia; Testa, Alberto Maria; Agostinelli, Elisabetta; Laureti, Sara

    2015-10-14

    The effect of the deposition temperature (Tdep) on the crystallographic orientation of pulsed laser-deposited FeCo/MgO(100) thin film was determined by means of X-ray reflectivity and high resolution trasmission electron microscopy analysis and was correlated with the magnetic anisotropy properties measured by angle dependent hysteresis loops. Highly textured films with a bcc structure and very smooth surface were obtained even at room temperature, the film being [100] and [110] oriented, at Tdep=25 °C and 150 °C, respectively. The cubic symmetry is reflected in the angular dependence of remanent magnetization, showing a 4-fold character, whose in-plane distribution is consistent with the different crystallographic orientations of the films. The high structural quality, even at room temperature, is reflected in a high value of the saturation magnetization and low coercivity, matching the requirements for technological applications.

  16. Labyrinthine and dendritic patterns in polyethylene oxide films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Karoutsos, V.; Gontad, F.; Kantarelis, S.; Lorusso, A.; Perrone, A.; Vainos, N. A.

    2017-04-01

    Polyethylene oxide (PEO) films were grown by pulsed laser deposition using two different lasers: ArF (193 nm, 5 ns) and Nd:YAG (355 nm, 7 ns). Even though very similar experimental conditions have been applied to ablate identical targets, different surface morphologies and structures have been observed. Depending on laser fluence, labyrinthine patterns in PEO films have been formed when using 355 nm laser pulses at fluence values in the range 280-1000 mJ/cm2. The same material ablated by 193 nm excimer laser pulses at 200 mJ/cm2 fluence grows in dendritic morphologies. Both target and laser deposited materials have been thoroughly characterized using infrared spectroscopic, microscopic and X-ray analytical methods. Infrared spectroscopy demonstrated the close similarity of molecular chains for both target and film materials. X-ray diffraction analysis indicates polymer chain scissoring by ultraviolet irradiation, a fact also confirmed by size exclusion chromatography.

  17. Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film.

    SciTech Connect

    Vikram, S.

    1999-01-20

    We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation.

  18. Pulsed laser deposition of polyhydroxybutyrate biodegradable polymer thin films using ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Kecskemeti, G.; Smausz, T.; Kresz, N.; Tóth, Zs.; Hopp, B.; Chrisey, D.; Berkesi, O.

    2006-11-01

    We demonstrated the pulsed laser deposition (PLD) of high quality films of a biodegradable polymer, the polyhydroxybutyrate (PHB). Thin films of PHB were deposited on KBr substrates and fused silica plates using an ArF ( λ = 193 nm, FWHM = 30 ns) excimer laser with fluences between 0.05 and 1.5 J cm -2. FTIR spectroscopic measurements proved that at the appropriate fluence (0.05, 0.09 and 0.12 J cm -2), the films exhibited similar functional groups with no significant laser-produced modifications present. Optical microscopic images showed that the layers were contiguous with embedded micrometer-sized grains. Ellipsometric results determined the wavelength dependence ( λ ˜ 245-1000 nm) of the refractive index and absorption coefficient which were new information about the material and were not published in the scientific literature. We believe that our deposited PHB thin films would have more possible applications. For example to our supposal the thin layers would be applicable in laser induced forward transfer (LIFT) of biological materials using them as absorbing thin films.

  19. Hydroxyapatite and ZrO II biocompatible coatings fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mašinova, P.; Jelínek, M.; Kocourek, T.; Dostálova, T.; Teuberova, Z.; Seydlova, M.; Jurek, K.; Mróz, W.; Prokopiuk, A.; Smetana, K.

    2006-03-01

    Thin films of ZrO II and hydroxyapatite/ZrO II were created by pulsed laser deposition using KrF and ArF excimer laser. Films were tested by XRD, SEM and WDX methods and in-vitro for cytotoxicity, adhesion and cell proliferation.

  20. Method for controlling energy density for reliable pulsed laser deposition of thin films

    SciTech Connect

    Dowden, P. C. E-mail: qxjia@lanl.gov; Bi, Z.; Jia, Q. X. E-mail: qxjia@lanl.gov

    2014-02-15

    We have established a methodology to stabilize the laser energy density on a target surface in pulsed laser deposition of thin films. To control the focused laser spot on a target, we have imaged a defined aperture in the beamline (so called image-focus) instead of focusing the beam on a target based on a simple “lens-focus.” To control the laser energy density on a target, we have introduced a continuously variable attenuator between the output of the laser and the imaged aperture to manipulate the energy to a desired level by running the laser in a “constant voltage” mode to eliminate changes in the lasers’ beam dimensions. This methodology leads to much better controllability/reproducibility for reliable pulsed laser deposition of high performance electronic thin films.

  1. Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

    NASA Technical Reports Server (NTRS)

    Ianno, N. J.; Liou, S. H.; Woollam, John A.; Thompson, D.; Johs, B.

    1990-01-01

    Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox.

  2. Evolution of energy deposition during glass cutting with pulsed femtosecond laser radiation

    NASA Astrophysics Data System (ADS)

    Kalupka, C.; Großmann, D.; Reininghaus, M.

    2017-05-01

    We report on investigations of the energy deposition in the volume of thin glass during an ablation cutting process with pulsed femtosecond laser radiation by time-resolved pump-probe shadowgraphy. For a single laser pulse, the temporal evolution of the transient electronic excitation of the glass volume is imaged up to 10 ps after initial excitation. For an increasing number of laser pulses, the spatial excitation of the glass volume significantly changes compared to single pulse irradiation. Sharp spikes are observed, which reduce the transmission of the illuminating probe pulse. This indicates local maxima of the absorption and, therefore, energy deposition of the pump pulse energy in the glass volume. Furthermore, for an increasing number of pulses, different shapes of the surface ablation crater are observed. To study the correlation between the shape of the surface ablation crater and the energy deposition in the glass volume, simulations of the spatial intensity distribution of the pump pulse are executed by means of linear beam propagation method. We show that the transient excitation spikes observed by pump-probe shadowgraphy can be explained by refraction and diffraction of the laser radiation at the surface ablation crater. Our results provide an experimental validation for the physical reason of an ablation stop for an ablation cutting process. Moreover, the simulations allow for the prediction of damage inside the glass volume.

  3. The Application of Pulsed Laser Deposition in Producing Bioactive Ceramic Films

    NASA Astrophysics Data System (ADS)

    Zhao, Yafan; Chen, Chuanzhong; Wang, Diangang

    Pulsed laser deposition (PLD) is a relatively new technique for producing thin films. It presents unique advantages for the deposition of bioactive ceramics. The mechanism and characteristics of the technique PLD are introduced. Its applications and current research status in hydroxyapatite and bioglass thin films are reviewed. The effect of processing parameters of PLD, including atmosphere, substrate temperature, laser wavelength and target properties, on the structures and the properties of the hydroxyapatite film, is analyzed in detail. Future application trends are also analyzed.

  4. Gas sensing studies of pulsed laser deposition deposited WO3 nanorod based thin films.

    PubMed

    Ahmad, Muhammad Z; Kang, Joonhee; Zoolfakar, Ahmad S; Sadek, Abu Z; Wlodarski, Wojtek

    2013-12-01

    WO3 nanorod based thin films were deposited via pulsed laser deposition onto quartz conductometric transducers with pre-patterned gold interdigitated transducers (IDT) employing the shortest wavelength (193 nm) ArF excimer laser. Micro-characterization techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed to study surface morphology and crystal structure. It was observed that the fabricated films showed nanocolumnar features perpendicular to the surface. The measured sizes of the nanorods were found to be approximately -50 nm in diameter. The high resolution TEM (HRTEM) image of the nanorods based WO3 showed the WO3 lattice spacing of 3.79 angstroms corresponding to the (020) plane of monoclinic WO3. Gas sensing characterizations of the developed sensors were tested towards hydrogen and ethanol at temperatures between room and 400 degrees C. The sensor exhibited high response towards H2 and ethanol at operating temperatures of 170 and 400 degrees C, respectively. The excellent sensing characteristics of WO3 films towards ethanol and H2 at low concentrations offer great potential for low cost and stable gas sensing.

  5. Pulsed laser deposition of plasmonic nanostructured gold on flexible transparent polymers at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    McCann, Ronán; Hughes, Cian; Bagga, Komal; Stalcup, Apryll; Vázquez, Mercedes; Brabazon, Dermot

    2017-06-01

    In this paper, we outline a novel technique for the deposition of nanostructured thin films utilizing a modified form of pulsed laser deposition (PLD). We demonstrate confined atmospheric PLD (CAP) for the deposition of gold on cyclic olefin polymer substrates. The deposition process is a simplified form of conventional PLD, with deposition conducted under atmospheric conditions and the substrate and target in close proximity. It was found that this confinement results in the deposition of nanostructured thin films on the substrate. Infrared spectroscopy showed no significant change of polymer surface chemistry as a result of the deposition process, and optical spectroscopy revealed plasmonic behavior of the resulting thin film. The effect of laser fluence on the deposition process was also examined with more uniform films deposited at higher fluences.

  6. Laser-induced metal plasmas for pulsed laser deposition of metal-oxide thin films

    NASA Astrophysics Data System (ADS)

    Wagenaars, Erik; Colgan, James; Rajendiran, Sudha; Rossall, Andrew

    2015-09-01

    Metal and metal-oxide thin films, e.g. ZnO, MgO, Al2O3 and TiO2, are widely used in e.g. microelectronics, catalysts, photonics and displays. Pulsed Laser Deposition (PLD) is a plasma-based thin-film deposition technique that is highly versatile and fast, however it suffers from limitations in control of film quality due to a lack of fundamental understanding of the underlying physical processes. We present experimental and modelling studies of the initial phases of PLD: laser ablation and plume expansion. A 2D hydrodynamic code, POLLUX, is used to model the laser-solid interaction of a Zn ablation with a Nd:YAG laser. In this early phase of PLD, the plasma plume has temperatures of about 10 eV, is highly ionized, and travels with a velocity of about 10-100 km/sec away from the target. Subsequently, the plasma enters the plume expansion phase in which the plasma cools down and collision chemistry changes the composition of the plume. Time-integrated optical emission spectroscopy shows that Zn I and Zn II emission lines dominate the visible range of the light emission. Comparison with the Los Alamos plasma kinetics code ATOMIC shows an average temperature around 1 eV, indicating a significant drop in plasma temperature during the expansion phase. We acknowledge support from the UK Engineering and Physical Sciences Research Council (EPSRC), Grant EP/K018388/1.

  7. Pulse laser deposited nanostructured ZnO thin films: a review.

    PubMed

    Kumar, Rajesh; Kumar, Girish; Umar, Ahmad

    2014-02-01

    This review summarizes the work principles of pulse laser deposition (PLD) apparatus, physical processes like ablation, and plasma plume formation accompanying the deposition of un-doped ZnO from target to substrate material. Various modes of deposition and factors influencing the properties of thin films such as substrate temperature, background gas pressure, laser energy density (laser fluence), target to substrate distance, repetition rate, oxygen partial pressure in deposition chamber, deposition time and post growth annealing which control deposition parameters such as adsorption, desorption, surface diffusion, nucleation, and crystallization/re-crystallization are also discussed in this review. Moreover, various film properties such as morphology, roughness of the film surface, film thickness, grain size, optical transmittance, sensitivity, electrical conductivity, uniformity and electrical resistivity of the deposited ZnO thin films have also been enumerated in the present review.

  8. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    SciTech Connect

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  9. Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

    SciTech Connect

    Gayathri, S.; Sridharan, M. E-mail: m.sridharan@ece.sastra.edu; Kumar, N.; Krishnan, R. E-mail: m.sridharan@ece.sastra.edu; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.

    2013-12-15

    Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp{sup 2} bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp{sup 3} domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp{sup 2} fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm{sup 2}. The super low friction mechanism is explained by low sliding resistance of a-C/sp{sup 2} and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm{sup 2} is related to widening of the intergrain distance caused by transformation from sp{sup 2} to sp{sup 3} hybridized structure.

  10. Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

    NASA Technical Reports Server (NTRS)

    Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

    1992-01-01

    The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

  11. Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

    NASA Technical Reports Server (NTRS)

    Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

    1992-01-01

    The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

  12. Effects of deposition rate and thickness on the properties of YBCO films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shi, D. Q.; Ko, R. K.; Song, K. J.; Chung, J. K.; Choi, S. J.; Park, Y. M.; Shin, K. C.; Yoo, S. I.; Park, C.

    2004-02-01

    YBCO films with various thicknesses from 100 nm to 1.6 µm were deposited on single crystal SrTiO3 substrates by pulsed laser deposition (PLD). The effects of thickness and deposition rate—by means of controlling the pulsed laser frequency—on the critical current density (Jc) were studied. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to examine the orientation, crystallization and surface quality. The amount of a-axis YBCO component evaluated from the ratio of XRD chi-scan intensities of the a-axis and c-axis for the YBCO (102) plane increased as the YBCO film became thicker. SEM was used to analyse the surface of YBCO film, and it was shown that the surface of YBCO film became rougher with increasing thickness. There were many large singular outgrowths and networks of outgrowths on the surface of the YBCO films with thickness greater than 0.4 µm. The increased amount of a-axis YBCO component and the coarse microstructure of the thick YBCO film caused degradation of Jc with increasing thickness.

  13. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  14. In Situ Creation of Nanoparticles from YBCO by Pulsed Laser Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    entailed pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from ~3 to 5 nm and...pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from 3 to 5 nm and are typical...are extremely small pieces of matter that have dimensions on the order of a few nm . It may well be possible to use nanoparti- cles of YBCO itself as

  15. Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Písařík, P.; Jelínek, M.; Kocourek, T.; Zezulová, M.; Remsa, J.; Jurek, K.

    2014-10-01

    Diamond-like carbon (DLC) and Cr-doped diamond-like carbon layers were studied. DLC and Cr-DLC were deposited on silicon and titanium substrates (Ti-6Al-4V) by dual-pulsed laser ablation using two KrF excimer lasers and two targets (graphite and chromium). The composition was analyzed using wavelength-dependent X-ray spectroscopy. The Cr content increased from 2.2 to 17.9 at%. The topology and surface properties as roughness of layers were studied using scanning electron microscopy and atomic force microscopy. With the chromium concentration increased the roughness and the number of droplets. Carbon and chromium bonds were determined by Raman spectroscopy. With an increase in chromium content the I D/ I G ratio increased. Mechanical properties of DLC films with various chromium content were evaluated. Hardness (reduced Young's modulus) was determined by nanoindentation and reached of 51 GPa (309 GPa). Films adhesion was studied using scratch test and with concentration of chromium increased up to 20 N.

  16. XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Dolo, J. J.; Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Dejene, B. F.

    2010-04-01

    This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd2O2S:Tb3 + thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd2O2S:Tb3 + emission. The main emission peak due to the 5D4-7F5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd2O3 layer, with small amounts of Gd2S3, on the surface.

  17. Pyramidal growth of ceria nanostructures by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bârcă, E. S.; Filipescu, M.; Luculescu, C.; Birjega, R.; Ion, V.; Dumitru, M.; Nistor, L. C.; Stanciu, G.; Abrudeanu, M.; Munteanu, C.; Dinescu, M.

    2016-02-01

    We report in this paper on the deposition and characterization of CeO2 nanostructured thin films with hierarchical morphology. Micro-sized ceria powder (CeO2, 99.9% purity) was pressed to obtain a ceramic target. An ArF laser working at 193 nm irradiated the target in controlled oxygen gas flow at constant pressure (0.1 mbar). Silicon wafers used as substrates for thin films were heated at different temperatures, up to 773 K. The influence of substrate temperature on the structure and surface morphology of ceria thin films was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and scanning electron microscopy (SEM). The refractive indices and information about roughness and thickness were revealed by spectroellipsometry. Crystalline cubic ceria thin films exhibiting a hierarchical structure that combines columnar and dendritic growth were obtained at temperatures above 473 K. For the samples obtained at 773 K, columns ending in pyramidal formations with sharp edges and sizes of hundreds of nanometers were observed, indicating a high crystallinity of the layer. XRD analysis reveals a consistent increase of the X-ray coherence length/crystallite size along the [111] direction with increasing temperature. Using a semi-empirical formula, Raman crystallites sizes were calculated and it was found that size increases with the temperature increasing. The spectroellipsometry investigations evidenced the increasing of refractive index with the substrate temperature increase. High surface roughness and pyramidal structures were noticed from the atomic force microscopy images for layers deposited at substrate temperature above 473 K.

  18. Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

    NASA Astrophysics Data System (ADS)

    De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

    2012-09-01

    Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

  19. Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

    SciTech Connect

    Melaibari, Ammar A.; Molian, Pal

    2012-11-15

    Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered 'brick-bridge-mortar' nacre of AlMgB{sub 14} (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB{sub 14}. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB{sub 14}/Ti system revealed that the brick is to be 250 nm thick, 9 {mu}m lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

  20. Pulsed laser deposition of polytetrafluoroethylene-gold composite layers

    NASA Astrophysics Data System (ADS)

    Kecskeméti, Gabriella; Smausz, Tomi; Berta, Zsófia; Hopp, Béla; Szabó, Gábor

    2014-11-01

    PTFE-metal composites are promising candidates for use as sensor materials. In present study PTFE-Au composite layers were deposited by alternated ablation of pressed Teflon pellets and gold plates with focused beam of an ArF excimer laser at 6 J/cm2 fluence, while keeping the substrate at 150 °C temperature. The morphology and chemical composition of the ~3-4 μm average thickness layers was studied by electron microscopy and energy dispersive X-ray spectroscopy. The layers were mainly formed of PTFE gains and clusters which are covered by a conductive Au film. For testing the applicability of such layers as sensing electrodes, composite layers were prepared on one of the two neighbouring electrode of a printed circuit board. Cholesterol and glucose solutions were prepared using 0.1M NaOH solvent containing 10% Triton X-100 surfactant. The electrodes were immersed in the solutions and voltage between the electrodes was measured while a constant current was drawn through the sample. The influence of the analyte concentration on the power spectral density of the voltage fluctuation was studied.

  1. Silicon surface deoxidation using strontium oxide deposited with the pulsed laser deposition technique.

    PubMed

    Jovanović, Zoran; Spreitzer, Matjaž; Kovač, Janez; Klement, Dejan; Suvorov, Danilo

    2014-10-22

    The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 °C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 × 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.

  2. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  3. Cytocompatibility of calcium phosphate coatings deposited by an ArF pulsed laser.

    PubMed

    Hashimoto, Y; Kawashima, M; Hatanaka, R; Kusunoki, M; Nishikawa, H; Hontsu, S; Nakamura, M

    2007-07-01

    In the current studies, we deposited ultra-thin hydroxyapatite films on a pure titanium substrate by pulsed laser deposition, and we examined the effects of these surfaces on rat bone marrow (RBM) cells. This method allowed deposition of 500-, 2000-, and 5000-Angstrom-thick hydroxyapatite films. X-ray diffraction showed that the amorphous films recrystallized to a hydroxyapatite crystal structure after annealing. The proliferation of RBM cells was unaffected by the hydroxyapatite films, but osteocalsin and alkaline phosphatase mRNA and protein levels were elevated in cells grown on 2000- and 5000-Angstrom-thick films. These results indicate that ultra-thin hydroxyapatite films generated by pulsed laser deposition are better at promoting osteogenesis than pure titanium surfaces.

  4. Cytocompatibility of calcium phosphate coatings deposited by an ArF pulsed laser.

    PubMed

    Hashimoto, Y; Kawashima, M; Hatanaka, R; Kusunoki, M; Nishikawa, H; Hontsu, S; Nakamura, M

    2008-01-01

    In the current studies, we deposited ultra-thin hydroxyapatite films on a pure titanium substrate by pulsed laser deposition, and we examined the effects of these surfaces on rat bone marrow (RBM) cells. This method allowed deposition of 500-, 2,000-, and 5,000-A-thick hydroxyapatite films. X-ray diffraction showed that the amorphous films recrystallized to a hydroxyapatite crystal structure after annealing. The proliferation of RBM cells was unaffected by the hydroxyapatite films, but osteocalsin and alkaline phosphatase mRNA and protein levels were elevated in cells grown on 2,000- and 5,000-A-thick films. These results indicate that ultra-thin hydroxyapatite films generated by pulsed laser deposition are better at promoting osteogenesis than pure titanium surfaces.

  5. Improved passivation of the ZnO/Si interface by pulsed laser deposition

    SciTech Connect

    Gluba, M. A.; Nickel, N. H.; Rappich, J.; Hinrichs, K.

    2013-01-28

    Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of Almost-Equal-To 10{sup 12} cm{sup -2}. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.

  6. Silica Nanowire Growth on Photonic Crystal Fiber by Pulsed Femtosecond Laser Deposition

    NASA Astrophysics Data System (ADS)

    Langellier, Nicholas; Li, Chih-Hao; Furesz, Gabor; Glenday, Alex; Phillips, David; Zhang, Huiliang; Noah Chang, Guoqing; Kaertner, Franz; Szentgyorgyi, Andrew; Walsworth, Ronald

    2012-06-01

    We present a new method of nanowire fabrication using pulsed laser deposition. An 800 mW 1 GHz femtosecond Ti:Sapphire laser is guided into a polarization-maintaining photonic crystal fiber (PCF). The PCF, with a core tapered to 1.7 micron diameter, converts femtosecond laser pulses centered at 800 nm into green light with a spectrum down to 500 nm. The PCF is enclosed in a cylindrical tube with glass windows, sealed in a class 100 clean room with silicone-based RTV adhesive. The high power of each laser pulse in a silica-rich environment leads to growth of a silica nanowire at the output end of the PCF. SEM analysis shows that the nanowire is 720 nm in diameter and grows at a rate of about 0.6 um/s. Details of nanowire performance along with potential applications will be presented.

  7. Growth of arrays of Al-doped ZnO nanocones by pulsed laser deposition.

    PubMed

    Sun, Ye; Addison, Katherine E; Ashfold, Michael N R

    2007-12-12

    Arrays of aligned Al-doped ZnO nanocones have been synthesized by pulsed laser deposition following excimer laser ablation of a ceramic ZnO target containing 2% Al(2)O(3) (by weight). The elemental composition, microstructural and optical properties of the products were examined by laser induced breakdown spectroscopy, electron microscopy, x-ray diffraction and room temperature photoluminescence measurements. The incident laser fluence was identified as a key parameter in nanocone formation. Their tapered morphologies and small tip diameters (approximately 5 nm) suggest that Al-doped ZnO nanocones could find application as field emitters and as a gas sensing material.

  8. PULSED LASER DEPOSITION OF MAGNETIC MULTILAYERS FOR THE GRANT ENTITLED LASER PROCESSING OF ADVANCED MAGNETIC MATERIALS

    SciTech Connect

    Monica Sorescu

    2003-10-11

    Nanostructured magnetite/T multilayers, with T = Ni, Co, Cr, have been prepared by pulsed laser deposition. The thickness of individual magnetite and metal layers takes values in the range of 5-40 nm with a total multilayer thickness of 100-120 nm. X-ray diffraction has been used to study the phase characteristics as a function of thermal treatment up to 550 C. Small amounts of maghemite and hematite were identified together with prevailing magnetite phase after treatments at different temperatures. The mean grain size of magnetite phase increases with temperature from 12 nm at room temperature to 54 nm at 550 C. The thermal behavior of magnetite in multilayers in comparison with powder magnetite is discussed. These findings were published in peer-reviewed conference proceedings after presentation at an international materials conference.

  9. Preparation and some properties of pulsed laser deposited YFeO 3 films

    NASA Astrophysics Data System (ADS)

    Krishnan, R.; Lisfi, A.; Guyot, M.; Cagan, V.

    1995-06-01

    YFeO 3 orthoferrite films have been deposited on to quartz and sapphire substrates by pulsed laser deposition. The films crystallize when annealed at temperatures in the range 750 to 900°C. The perpendicular hysteresis loops are rectangular with a maximum coercivity of 9 kOe. The Faraday rotation at 633 nm wavelength is in the range 4-5 × 10 3 deg/cm.

  10. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    NASA Astrophysics Data System (ADS)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  11. Morphology and structural studies of WO3 films deposited on SrTiO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-12-01

    WO3 films have been grown by pulsed laser deposition on SrTiO3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  12. Biocompatible and bioactive nanostructured glass coatings synthesized by pulsed laser deposition: In vitro biological tests

    NASA Astrophysics Data System (ADS)

    Popescu, A. C.; Sima, F.; Duta, L.; Popescu, C.; Mihailescu, I. N.; Capitanu, D.; Mustata, R.; Sima, L. E.; Petrescu, S. M.; Janackovic, D.

    2009-03-01

    We report on the synthesis by pulsed laser deposition with a KrF* excimer laser source ( λ = 248 nm, τ = 25 ns) of bioglass thin films of 6P57 and 6P61 types. Physiology, viability, and proliferation of human osteoblast cells were determined by quantitative in vitro tests performed by flow cytometry on primary osteoblasts cultured on pulsed laser deposited bioglasses. Both types of glass films proved to be appropriate mediums for cell survival and proliferation. In a parallel investigation, cell morphology and adhesion to the surface was studied by fluorescence microscopy and scanning electron microscopy. Strong bonds between the materials and cells were found in both cases, as osteoblast pseudopodes penetrated deep into the material. According to our observations, the 6P57 glass films were superior with respect to viability and proliferation performances.

  13. High-quality in situ manganite thin films by pulsed laser deposition at low background pressures

    NASA Astrophysics Data System (ADS)

    Tebano, A.; Balestrino, G.; Boggio, N. G.; Aruta, C.; Davidson, B.; Medaglia, P. G.

    2006-06-01

    We show that by decreasing the laser fluence it is possible to improve the oxidation process in manganite thin films under low background oxygen pressure, allowing the in situ use of conventional Reflection High Energy Electron Diffraction diagnostic. Films deposited at low fluence (corresponding to a deposition rate per pulse lower than 10-2 unit cells per laser shot) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings.

  14. PbTe thin films grown by femtosecond pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rodriguez, E.; Silva, D.; Moya, L.; Cesar, C. L.; Barbosa, L. C.; Schrank, A.; Souza Filho, C. R.; de Oliveira, E. P.

    2007-09-01

    PbTe thin films were grown on BK7 glass and Si(100) substrates using femtosecond pulsed laser deposition at room temperature. The influence of the background pressure and the laser fluence on the structural and optical characteristics of the PbTe films was studied. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to characterize the surface and structural properties of the deposited PbTe thin films, respectively. Transmission spectroscopy measurements in the visible and infrared region (VIS-IR) were used to investigate the optical properties of the PbTe thin films.

  15. Preparation and characterization of pulsed laser deposition (PLD) SiC films

    NASA Astrophysics Data System (ADS)

    Tang, Y. H.; Sham, T.-K.; Yang, D.; Xue, L.

    2006-03-01

    Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ˜5 J/cm 2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.

  16. Pulsed laser deposition of semiconducting crystalline double-doped barium titanate thin films on nickel substrates

    NASA Astrophysics Data System (ADS)

    Apostol, I.; Stefan, N.; Luculescu, C. R.; Birjega, R.; Socol, M.; Miroiu, M.; Mihailescu, I. N.

    2011-02-01

    We synthesized by pulsed laser deposition (Ba,Sr,Y)TiO3 and (Ba,Pb,Y)TiO3 thin films on mechanically polished nickel substrates. The synthesized thin films were analyzed for: crystalline structure by X-ray diffractometry, morphology and surface topography by atomic force microscopy, optical and scanning electron microscopy, and elemental composition by energy dispersive X-ray spectroscopy and electrical properties by electrical measurements. We have shown that film properties were determined by the dopants, target composition, and deposition parameters (oxygen pressure, substrate temperature and incident laser fluence). All films exhibited a semiconducting behavior, as proved by the decrease of electrical resistance with heating temperature.

  17. Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks

    SciTech Connect

    Mahjouri-Samani, Masoud; Gresback, Ryan G; Tian, Mengkun; Puretzky, Alexander A; Rouleau, Christopher M; Eres, Gyula; Ivanov, Ilia N; Xiao, Kai; McGuire, Michael A; Duscher, Gerd; Geohegan, David B

    2014-01-01

    Here we explore pulsed laser deposition (PLD), a well known and versatile synthesis method principally used for epitaxial oxide thin film growth, for the synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser vaporized material from bulk GaSe targets in Ar background gas. Uniform coverage of interconnected, crystalline, few-layer, photoresponsive GaSe nanosheets in both in-plane and out-of-plane orientations were achieved under different ablation plume conditions over ~1.5 cm2 areas. Plume propagation was characterized by in situ ICCD-imaging. High (1 Torr) Ar background gas pressures were found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1-3 layer GaSe triangular nanosheets of ~ 200 nm domain size were formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increased linearly with pulse number, adding layers in a two-dimensional (2D) growth mode while maintaining a surface roughness of 2 GaSe layers for increasing overall thickness. Field effect transistors using these interconnected crystalline GaSe networks showed p-type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V-1s-1. Spectrally-resolved photoresponsivities and external quantum efficiencies ranged from 0.4 AW-1 and 100% at 700 nm, to 1.4 AW-1 and 600 % at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit photoresponsive networks of 2D nanosheets with digital thickness control and substrate-scale uniformity for a variety of applications.

  18. Effects of the substrate temperature on the bioglass films deposited by pulsed laser

    NASA Astrophysics Data System (ADS)

    Zhao, Yafan; Song, Mingda; Chen, Chuanzhong; Liu, Jian

    2008-08-01

    Effects of the substrate temperature on the bonding configuration and adhesion strength of the bioglass films deposited by pulsed laser were investigated by Fourier transform infrared spectroscopy (FTIR) and scratch apparatus. Morphology of the films is compact with the particles on the surface of them and the structure is amorphous glass. Bonding configuration is different from that of the target. Si-O-NBO/Si-O-Si (s) intensity ratios of the films decline as compared with the target. Besides, this tendency is obvious as the substrate temperature decreases. This effect is attributed to the network rearrangement during the film growth, which is associated to special structure of glass and complex physical mechanisms of pulsed laser deposition (PLD). Scratch test results show that the film deposited at 200 °C has the highest adhesion strength.

  19. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  20. Plasma instabilities in magnetically assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haverkamp, J. D.; Bourham, M. A.; Du, S.; Narayan, J.

    2008-06-01

    The laser ablation of a carbon target in a transverse magnetic field is studied using a quadruple Langmuir probe. Ion saturation signals indicate the presence of wavelike behaviour not found in field-free laser ablation of carbon. Results are discussed in terms of the lower-hybrid drift instability and the electron-ion hybrid instability. The results are found to be most consistent with the electron-ion hybrid instability.

  1. Pulsed laser deposition of adherent hexagonal/cubic boron nitride layer systems at high growth rates

    NASA Astrophysics Data System (ADS)

    Weißmantel, Steffen; Reiße, Günter

    2002-09-01

    Cubic boron nitride (c-BN) films were prepared by ion-beam-assisted pulsed laser deposition (IAPLD) using a KrF excimer laser for ablation. The c-BN growth rates of 50 nm/min at relatively low substrate temperatures of 250 °C were achieved by using high laser energy densities of more than 30 J/cm 2 and at ion beam energies of 600-700 eV. Main advantage of IAPLD for the deposition of c-BN films is that at high laser energy densities the ratio of ions from the ion beam to ablated atoms and ions necessary for cubic film growth can be reduced to 0.14, since the ablated boron and nitrogen species themselves have high mean kinetic energies of 130-180 eV. By using pulsed laser deposited h-BN intermediate layers, 300-420 nm thick well-adherent c-BN films can be prepared on Si and WC hard metal substrates. The maximum c-BN film thickness of some 0.5 μm is limited by the accumulation of particulates, formed during the ablation process, in the films. The microstructure, stress, hardness and adhesion of such layer systems deposited at high growth rates are presented.

  2. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  3. Study of structural property of Co ferrite thin film grown by pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Nongjai, Razia; Khan, Shakeel; Ahmad, Hilal; Khan, Imran; Asokan, K.

    2012-06-01

    Thin film of Cobalt Ferrite was deposited on Si (1 0 0) substrate using Pulsed Laser Deposition (PLD) technique. The deposited film was characterized by X-ray Diffraction (XRD), X-ray reflectivity (XRR), Rutherford Backscattering Spectroscopy (RBS) and Raman Spectroscopy and was found to be single phase, textured along (1 1 1) directions and approximately matching the stoichoimetry of the target with negligible strain. The film had a very uniform and flat surface. Raman spectroscopy measurement further confirmed the formation of single phase cubic spinel structure. T2g Raman mode was missing from the spectra which may be due to cation redistribution and crystallite size effect.

  4. Tunable Stoichiometry of BCxNy Thin Films Through Multitarget Pulsed Laser Deposition Monitored via In Situ Ellipsometry (Postprint)

    DTIC Science & Technology

    2014-02-05

    this paper is that by synchronizing a pulsed laser with two different pulsed laser deposition (PLD) target materials and a programmable galvanometer ...Cambridge Technology galvanometer system (two axes servo mirror system with capacitive coupled position feedback for high speed) to a uniform elliptical... galvanometer : PLD A–carbon and PLD B–BN. Jones et al.: Tunable stoichiometry of BCxNy thin films through multitarget pulsed laser. . . Journal of

  5. Pulsed laser deposited diode-pumped 7.4 W Yb:Lu₂O₃ planar waveguide laser.

    PubMed

    Parsonage, Tina L; Beecher, Stephen J; Choudhary, Amol; Grant-Jacob, James A; Hua, Ping; Mackenzie, Jacob I; Shepherd, David P; Eason, Robert W

    2015-12-14

    Fabrication, characterization, and laser performance of an Yb:Lu₂O₃ planar waveguide laser are reported. Pulsed laser deposition was employed to grow an 8 µm-thick Yb-doped lutetia waveguide on a YAG substrate. X-ray diffraction was used to determine the crystallinity, and spectroscopic characterization showed the absorption and emission cross-sections were indistinguishable from those reported for bulk material. When end-pumped by a diode-laser bar an output power of 7.4 W was achieved, limited by the available pump power, at a wavelength of 1033 nm and a slope efficiency of 38% with respect to the absorbed pump power.

  6. Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

    NASA Astrophysics Data System (ADS)

    Schraknepper, H.; Bäumer, C.; Gunkel, F.; Dittmann, R.; De Souza, R. A.

    2016-12-01

    SrRuO3 thin-films were deposited with different pulse repetition rates, fdep, epitaxially on vicinal SrTiO3 substrates by means of pulsed laser deposition. The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature) consistently reveals that an increase in laser repetition rate results in an increase in ruthenium deficiency in the films. By the same token, it is shown that when using low repetition rates, approaching a nearly stoichiometric cation ratio in SrRuO3 becomes feasible. Based on these results, we propose a mechanism to explain the widely observed Ru deficiency of SrRuO3 thin-films. Our findings demand these theoretical considerations to be based on kinetic rather than widely employed thermodynamic arguments.

  7. Pulsed-laser deposited transition-metal carbides for field-emission cathode coatings.

    PubMed

    Back, Tyson; Fairchild, Steven B; Averett, Kent; Maruyama, Benji; Pierce, Neal; Cahay, Marc; Murray, P Terrence

    2013-09-25

    Thin films of transition-metal carbides ZrC, HfC, and TiC were deposited by pulsed-laser deposition under vacuum. The surface chemistry of the films was characterized with ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy in situ. X-ray diffraction was used to characterize the film structure. TiC was shown to be nearly stoichiometric and polycrystalline. The TiC was applied to a vertically aligned carbon nanotube sample and characterized by field emission. Field-emission results showed enhanced current and current density at a film thickness, 5 nm, not previously reported in the literature. Emission from TiC films was also shown to be less affected by adsorbates during field emission. Pulsed-laser deposition of TiC offers a distinct advantage over other techniques in that high-quality films can be obtained under ultrahigh vacuum conditions without the use of a reactive background gas or excessively high annealing temperatures. The application of TiC by pulsed-laser deposition as a cathode coating shows potential for integration into a fabrication process.

  8. Tunable stoichiometry of SiOx-BaTiOy-BOz fabricated by multitarget pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Jones, John G.; Goldstein, Jonathan T.; Smith, Steven R.; Landis, Gerald R.; Grazulis, Lawrence; Sun, Lirong; Murphy, Neil R.; Kozlowski, Gregory; Jakubiak, Rachel; Stutz, Charles E.

    2015-01-01

    Oxide materials of desired stoichiometry are challenging to make in small quantities. Nanostructured thin films of multiple oxide materials were obtained by using pulsed laser deposition and multiple independent targets consisting of Si, BaTiO3, and B. Programmable stoichiometry of nanostructured thin films was achieved by synchronizing a 248-nm krypton fluoride excimer laser at an energy of 300 mJ/pulse, a galvanometer mirror system, and the three independent target materials with a background pressure of oxygen. Island growth occurred on a per pulse basis; some 500 pulses are required to deposit 1 nm of material. The number of pulses on each target was programmed with a high degree of precision. Trends in material properties were systematically identified by varying the stoichiometry of multiple nanostructured thin films and comparing the resulting properties measured using in situ spectroscopic ellipsometry, capacitance measurements including relative permittivity and loss, and energy dispersive spectroscopy (EDS). Films were deposited ˜150 to 907 nm thickness, and in situ ellipsometry data were modeled to calculate thickness n and k. A representative atomic force microscopy measurement was also collected. EDS, ellipsometry, and capacitance measurements were all performed on each of the samples, with one sample having a calculated permittivity greater than 20,000 at 1 kHz.

  9. Photoemission Studies of Metallic Photocathodes Prepared by Pulsed Laser Ablation Deposition Technique

    SciTech Connect

    Fasano, V.; Lorusso, A.; Perrone, A.; De Rosa, H.; Cultrera, L.

    2010-11-10

    We present the results of our investigation on metallic films as suitable photocathodes for the production of intense electron beams in RF photoinjector guns. Pulsed laser ablation deposition technique was used for growing Mg and Y thin films onto Si and Cu substrates in high vacuum and at room temperature.Different diagnostic methods were used to characterize the thin films deposited on Si with the aim to optimize the deposition process. Photoelectron performances were investigated on samples deposited on Cu substrate in an ultra high vacuum photodiode chamber at 10{sup -7} Pa. Relatively high quantum efficiencies have been obtained for the deposited films, comparable to those of corresponding bulks. Samples could stay for several months in humid open air before being tested in a photodiode cell. The deposition process and the role of the photocathode surface contamination and its influence on the photoelectron performances are presented and discussed.

  10. Thin-film preparation by back-surface irradiation pulsed laser deposition using metal powder targets

    NASA Astrophysics Data System (ADS)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Yamauchi, Makiko; Suda, Yoshiaki

    2017-01-01

    Several kinds of functional thin films were deposited using a new thin-film preparation method named the back-surface irradiation pulsed laser deposition (BIPLD) method. In this BIPLD method, powder targets were used as the film source placed on a transparent target holder, and then a visible-wavelength pulsed laser was irradiated from the holder side to the substrate. Using this new method, titanium oxide and boron nitride thin films were deposited on the silicon substrate. Surface scanning electron microscopy (SEM) images suggest that all of the thin films were deposited on the substrate with some large droplets irrespective of the kind of target used. The deposition rate of the films prepared by using this method was calculated from film thickness and deposition time to be much lower than that of the films prepared by conventional PLD. X-ray diffraction (XRD) measurement results suggest that rutile and anatase TiO2 crystal peaks were formed for the films prepared using the TiO2 rutile powder target. Crystal peaks of hexagonal boron nitride were observed for the films prepared using the boron nitride powder target. The crystallinity of the prepared films was changed by annealing after deposition.

  11. Fabricating functionally graded films with designed gradient profiles using pulsed laser deposition

    SciTech Connect

    Won, Yoo Jai; Ki, Hyungson

    2013-05-07

    A novel picosecond-laser pulsed laser deposition method has been developed for fabricating functionally graded films with pre-designed gradient profiles. Theoretically, the developed method is capable of precisely fabricating films with any thicknesses and any gradient profiles by controlling the laser beam powers for the two different targets based on the film composition profiles. As an implementation example, we have successfully constructed functionally graded diamond-like carbon films with six different gradient profiles: linear, quadratic, cubic, square root, cubic root, and sinusoidal. Energy dispersive X-ray spectroscopy is employed for investigating the chemical composition along the thickness of the film, and the deposition profile and thickness errors are found to be less than 3% and 1.04%, respectively. To the best of the authors' knowledge, this is the first method for fabricating films with designed gradient profiles and has huge potential in many areas of coatings and films, including multifunctional optical films. We believe that this method is not only limited to the example considered in this study, but also can be applied to all material combinations as long as they can be deposited using the pulsed laser deposition technique.

  12. Biocompatible nanocrystalline octacalcium phosphate thin films obtained by pulsed laser deposition.

    PubMed

    Socol, G; Torricelli, P; Bracci, B; Iliescu, M; Miroiu, F; Bigi, A; Werckmann, J; Mihailescu, I N

    2004-06-01

    We extended for the first time pulsed laser ablation to the deposition of octacalcium phosphate Ca8H2(PO4)6.5H2O (OCP) thin films. The depositions were performed with a pulsed UV laser source (lambda=248 nm, tau> or =20 ns) in a flux of hot water vapors. The targets were sintered from crystalline OCP powder and the laser ablation fluence was set at values of 1.5-2 J/cm2. During depositions the collectors, Si or Ti substrates, were maintained at a constant temperature within the range 20-200 degrees C. The resulting structures were submitted to heat treatment in hot water vapors for up to 6 h. The best results were obtained at a substrate temperature of 150 degrees C during both deposition and post-deposition treatment. High-resolution electron microscopy and XRD at grazing incidence indicated that the coatings obtained were made of nanocrystalline OCP. Cross-section TEM investigations showed that the coatings contained droplets stacked on Ti substrates as well as distributed across the entire thickness of the arborescence-like structure layers. The results of WST-1 assay, cell adherence, DNA replication, and caspase-1 activity confirmed the good biocompatibility of the coatings.

  13. Characterization of Environmental Stability of Pulsed Laser Deposited Oxide Ceramic Coatings

    SciTech Connect

    ADAMS, THADM

    2004-03-02

    A systematic investigation of candidate hydrogen permeation materials applied to a substrate using Pulsed Laser Deposition has been performed. The investigation focused on application of leading permeation-resistant materials types (oxide, carbides, and metals) on a stainless steel substrate. and evaluation of the stability of the applied coatings. Type 304L stainless steel substrates were coated with aluminum oxide, chromium oxide, and aluminum. Characterization of the coating-substrate system adhesion was performed using scratch adhesion testing and microindentation. Coating stability and environmental susceptibility were evaluated for two conditions-air at 350 degrees Celsius and Ar-H2 at 350 degrees Celsius for up to 100 hours. Results from this study have shown the pulsed laser deposition process to be an extremely versatile technology that is capable of producing a sound coating/substrate system for a wide variety of coating materials.

  14. Plasma plume dynamics in magnetically assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haverkamp, J. D.; Bourham, M. A.; Du, S.; Narayan, J.

    2009-01-01

    The expansion of a laser produced plasma perpendicular to a magnetic field is studied with a quadruple Langmuir probe and a B-dot probe. In regions where the kinetic beta is less than one, we find plume deceleration and weak displacement of the magnetic field. As the plume expands into regions of weak magnetic field, plume deceleration stops and the displacement of the magnetic field is large. The diffusion time of the magnetic field lines was consistent with anomalously large resistivity driven by the presence of an instability. Electron temperatures are larger than in the field-free case due to Ohmic heating mediated by the anomalously large resistivity.

  15. Isotopically Enriched Films and Nanostructures by Ultrafast Pulsed Laser Deposition

    SciTech Connect

    Peter Pronko

    2004-12-13

    This project involved a systematic study to apply newly discovered isotopic enrichment effects in laser ablation plumes to the fabrication of isotopically engineered thin films, superlattices, and nanostructures. The approach to this program involved using ultrafast lasers as a method for generating ablated plasmas that have preferentially structured isotopic content in the body of the ablation plasma plumes. In examining these results we have attempted to interpret the observations in terms of a plasma centrifuge process that is driven by the internal electro-magnetic fields of the plasma itself. The research plan involved studying the following phenomena in regard to the ablation plume and the isotopic mass distribution within it: (1) Test basic equations of steady state centrifugal motion in the ablation plasma. (2) Investigate angular distribution of ions in the ablation plasmas. (3) Examine interactions of plasma ions with self-generated magnetic fields. (3) Investigate ion to neutral ratios in the ablation plasmas. (5) Test concepts of plasma pumping. (6) Fabricate isotopically enriched nanostructures.

  16. Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

    NASA Astrophysics Data System (ADS)

    Rau, Kaustubh R.

    Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

  17. Ferromagnetic CrSb film fabricated by pulse-laser deposition and rapidly annealing

    NASA Astrophysics Data System (ADS)

    Li, Shandong; Lü, Liya; Huang, Zhigao

    2007-05-01

    CrSb film was fabricated by pulse laser deposition (PLD) on Si (1 0 0) wafer. Strong ferromagnetism was observed in the CrSb film annealed at a high heating/cooling rate of 200 K/s, which can be attributed to the presence of ferromagnetic zinc blende (ZB) CrSb phase. The appearance of metastable ZB-CrSb results from the strong inner stress due to the precipitation of the monoclinic Sb.

  18. High Yield Magnetic Nanoparticles Filled Multiwalled Carbon Nanotubes Using Pulsed Laser Deposition

    DTIC Science & Technology

    2008-08-01

    step procedure to fill vertically aligned multiwalled carbon nanotubes (MWNTs) with cobalt - ferrite using pulsed laser deposition (PLD). There has...been a previous attempt to fill MWNTs in aqueous suspension with cobalt ferrite [3]. Recently, we reported successful chemical filling of CNTs with...majority of the tubes are aligned vertically, a few are misaligned. In Fig. 2, SEM of vertical tubes after being filled with cobalt ferrite is shown

  19. High Yield Magnetic Nanoparticles Filled Multiwalled Carbon Nanotubes Using Pulsed Laser Deposition

    DTIC Science & Technology

    2008-12-01

    nanotubes (MWCNTs) with cobalt - ferrite using pulsed laser deposition (PLD). Fig. 5 Top view SEM image of vertically grown MWNTs on SiO2 filled...with cobalt ferrite [10] (Keller et al., 2004). Recently, we reported successful chemical filling of MWCNTs with magnetic nanoparticles [11] (Seifu...tubes are aligned vertically, a few are misaligned. In Fig. 4 SEM of vertical tubes after being filled with cobalt ferrite is shown. The filling

  20. Pulsed laser deposition and in vitro characteristics of triphasic - HASi composition on titanium.

    PubMed

    Palangadan, Rajesh; Sukumaran, Anil; Fernandez, Francis B; John, Annie; Varma, Harikrishna

    2014-02-01

    Pulsed laser deposition was used to deposit bioactive triphasic glass-ceramic composition (HASi) over titanium substrate using dense HASi target. Bioactive glass compositions are considered the most useful synthetic materials for immediate bone attachment because of its bioresorption, osteoconduction and osteointegration characteristics under in vivo conditions. The disadvantage of its brittleness associated with bioactive glass-ceramics has prompted its coating over metallic implants for the combination of duo mechanical and bioactive properties. The hard HASi target was able to undergo laser ablation under ambient gas pressure without bulk erosion of the target. Laser deposition was found to be efficient in depositing triphasic composition for immediate bone integration. The target and deposits were analyzed for the phase, composition and microstructural characteristics by means of X-ray diffraction, Fourier transform infrared spectroscopy, energy-dispersive X-ray analysis and scanning electron microscopy. Simultaneously, the adherent nature and mechanical behaviour of deposits were confirmed by scratch test and micro-indentation methods. Further, the in vitro dissolution and bioactivity were assessed by soaking in simulated body fluid followed by elemental analysis using inductively coupled plasma spectroscopy. The deposits were found to be cell-friendly, which was indicated by the phenomenology of stem cells under in vitro conditions.

  1. Ferrimagnetic thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Guyot, M.; Lisfi, A.; Krishnan, R.; Porte, M.; Rougier, P.; Cagan, V.

    1996-04-01

    Thin films, with thickness ranging from 25 nm up to 1.5 μm, of well-known ferrimagnetic materials such as NiFe 2O 4, CoFe 2O 4, Ni 0.5Zn 0.5Fe 2O 4, and BaFe 12O 19 have been prepared by PLD. Films made at low substrate temperature ( T < 500° C) are amorphous, but can crystallize by post-annealing in air in the temperature range 500-800°C. Films deposited at temperature between 500 and 800°C are polycrystalline, the grain size (from 50 nm to 1 μm) and surface roughness (1-100 nm) depending upon deposition parameters. The polycrystalline films are ferrimagnetic with a saturation magnetization close to the bulk value ( Js = 0.3 T for Ni-ferrites). Spinel films are isotropic as deduced from torque balance measurements. Coercivities are rather high for the spinel films (up to 500 Oe for Ni-ferrite) and even higher for the hexaferrites (3 kOe).

  2. Incorporation of gold into silicon by thin film deposition and pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.; Hudspeth, Quentin; Malladi, Girish; Efstathiadis, Harry; Mathews, Jay

    2016-12-01

    We report on the incorporation of gold into silicon at a peak concentration of 1.9 × 1020 at./cm3, four orders of magnitude above the equilibrium solubility limit, using pulsed laser melting of a thin film deposited on the silicon surface. We vary the film thickness and laser process parameters (fluence, number of shots) to quantify the range of concentrations that can be achieved. Our approach achieves gold concentrations comparable to those achieved with ion implantation followed by pulsed laser melting, in a layer with high crystalline quality. This approach offers an attractive alternative to ion implantation for forming high quality, high concentration layers of transition metals like gold in silicon.

  3. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1996-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  4. Method for continuous control of composition and doping of pulsed laser deposited films

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1995-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  5. Pulsed laser deposition of silk protein: Effect of photosensitized-ablation on the secondary structure in thin deposited films

    NASA Astrophysics Data System (ADS)

    Tsuboi, Yasuyuki; Goto, Masaharu; Itaya, Akira

    2001-06-01

    Silk fibroin is a simple protein expected to have functional applications in medicine and bioelectronics. The primary structure of this protein is quite simple, and the main secondary structures are β-sheet crystals and amorphous random coils. In the present study, we investigated pulsed laser deposition (PLD) of fibroin with the β-sheet structures as targets. The primary and secondary structures in films deposited were analyzed using infrared spectroscopy. Normal laser deposition at 351 nm using neat fibroin targets produced thin films of fibroin with a random coiled structure. Ablation was triggered by two-photonic excitation of the peptide chains, which resulted in the destruction of β-sheet structure in PLD. In order to avoid the two-photonic excitation, we adopted a PLD method utilizing anthracene (5-0.1 wt %) in a photosensitized reaction involving doped fibroin targets. Laser light (351 or 355 nm) was absorbed only by anthracene, which plays an important role converting photon energy to thermal energy with great ablation efficiency. Thin fibroin films deposited by this method had both random coil and β-sheet structures. As the dopant concentration and laser fluence decreased, the ratio of β-sheet domain to random coil increased in thin deposited films.

  6. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  7. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    NASA Astrophysics Data System (ADS)

    Perrone, A.; Gontad, F.; Lorusso, A.; Di Giulio, M.; Broitman, E.; Ferrario, M.

    2013-11-01

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ-2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10-5) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed.

  8. Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

    SciTech Connect

    Masina, B. N. E-mail: slafane@cdta.dz; Lafane, S. E-mail: slafane@cdta.dz; Abdelli-Messaci, S.; Kerdja, T.; Wu, L.; Akande, A. A.; Mwakikunga, B.

    2015-10-28

    Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

  9. Matrix assisted pulsed laser deposition of light emitting polymer thin films

    NASA Astrophysics Data System (ADS)

    Fitz-Gerald, J. M.; Jennings, G.; Johnson, R.; Fraser, C. L.

    2005-02-01

    Matrix assisted laser processing allows for the deposition of functional and fragile materials with a minimum of breakdown and decomposition. In this communication we report on light emitting thin films of ruthenium tris(bipyridine)-centered star-shaped poly(methyl methacrylate), Ru(bpyPMMA2)3(PF6)2, grown by matrix assisted pulsed laser deposition. A pulsed excimer laser (KrF) operating at 248 nm was used for all experiments. Due to the absorption at 248 nm and the solubility characteristics of [Ru(bpyPMMA2)3](PF6)2, dimethoxy-ethane (DME) was used as a solvent [1]. Dilute solutions (2 wt. %) of [Ru(bpyPMMA2)3](PF6)2 and DME were flash frozen in liquid nitrogen producing a solid target. Thin films ranging from 20 to 100 nm were grown on Si in an Ar atmosphere at 200 mTorr at a laser fluence of 0.04 J/cm2. The deposited materials were characterized by proton nuclear magnetic resonance (1H NMR) and gel permeation chromatography (GPC) equipped with refractive index (RI), and ultraviolet/visible (UV/vis) detection.

  10. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGES

    Craciun, D.; Socol, G.; Lambers, E.; ...

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  11. Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

    NASA Astrophysics Data System (ADS)

    Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

    2017-10-01

    We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

  12. Nanostructured and amorphous-like tungsten films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dellasega, D.; Merlo, G.; Conti, C.; Bottani, C. E.; Passoni, M.

    2012-10-01

    An experimental investigation of nanostructured, micrometer-thick, tungsten films deposited by pulsed laser deposition is presented. The films are compact and pore-free, with crystal grain sizes ranging from 14 nm to less than 2 nm. It is shown how, by properly tailoring deposition rate and kinetic energy of ablated species, it is possible to achieve a detailed and separate control of both film morphology and structure. The role of the main process parameters, He background pressure, laser fluence, and energy, is elucidated. In contrast with W films produced with other PVD techniques, β-phase growth is avoided and the presence of impurities and contaminants, like oxygen, is not correlated with film structure. These features make these films interesting for the development of coatings with improved properties, like increased corrosion resistance and enhanced diffusion barriers.

  13. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  14. Yb:YAG planar waveguide lasers grown by pulsed laser deposition: 70% slope efficiencies at 16 W of output power

    NASA Astrophysics Data System (ADS)

    Beecher, Stephen J.; Grant-Jacob, James A.; Parsonage, Tina L.; Hua, Ping; Mackenzie, Jacob I.; Shepherd, Dave P.; Eason, Robert W.

    2016-03-01

    We present our recent advances in the use of pulsed laser deposition (PLD) to fabricate active gain elements for use as amplifiers and laser oscillators. Record output powers exceeding 16 W and slope efficiencies of 70% are reported for optimized epitaxial growth of Yb(7.5%):YAG on to YAG substrates. We show for the first time that the performance of PLD material can meet or even exceed that of materials grown by more established methods such as the Czochralski technique. Details of fabrication, characterization and laser performance are presented in addition to outlining expected future improvements.

  15. Preparation and characterization of YBCO coating on metallic RABiT substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gonal, M. R.; Prajapat, C. L.; Igalwar, P. S.; Maji, B. C.; Singh, M. R.; Krishnan, M.

    2016-05-01

    Superconducting YBCO films are coated on metallic Rolling Assisted Bi-axially Textured Substrates (RABiTS) Ni-5wt % W (NiW) (002) substrate using pulsed laser deposition (PLD) system. Targets of YBa2Cu3O7-δ (YBCO) and buffer layers of Ceria and 8 mole % Yttria Stabilized Zirconia (YSZ) of high density are synthesized. At each stage of deposition coatings are characterized by XRD. Transport studies show superconducting nature of YBCO only when two successive buffer layers of YSZ and CeO2 are used.

  16. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition.

  17. Pulsed laser deposition of Bi2Te3-based thermoelectric thin films

    NASA Astrophysics Data System (ADS)

    Makala, Raghuveer S.; Jagannadham, K.; Sales, B. C.

    2003-09-01

    Thin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3, and n-type (Bi2Te3)90(Sb2Te3)5(Sb2Se3)5 (with 0.13 wt % SbI3) were deposited on substrates of mica and aluminum nitride (on silicon) using pulsed laser ablation at substrate temperatures between 300 °C to 500 °C. The films were characterized using x-ray diffraction and transmission electron microscopy for crystalline quality and epitaxial growth on the substrates. The surface morphology and microstructure were examined using scanning electron microscopy. X-ray mapping and energy-dispersive spectroscopy were performed to determine nonstoichiometry in the composition and homogeneity. The quality of the films, in terms of stoichiometric composition and crystal perfection, was studied as a function of growth temperature and laser fluence. The values of the Seebeck coefficient, electrical resistivity, and Hall mobility in the thin films were measured and compared with those in the bulk. Thermoelectric figure of merit of the films was evaluated from the measured parameters. Correlation of the thermoelectric properties, with the crystalline quality and stoichiometric composition of the films, showed the advantages of pulsed laser deposition of the multicomponent thermoelectric thin films. The results illustrate that laser physical vapor deposition is a suitable choice for deposition of multicomponent thermoelectric films. However, optimization of target composition, substrate temperature, and annealing of the films after deposition were found necessary to maintain the desired stoichiometry and low defect density. AlN/Si substrates provided better quality films compared to substrates of mica. Poor adhesion and cracking of the films on mica were found to be detrimental factors. Films deposited on AlN/Si substrates were found to show higher carrier mobility and higher values of Seebeck coefficient.

  18. Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

    DTIC Science & Technology

    2015-04-24

    in the plasma plume. Boron, being the lighter of the two species ( atomic weights: B¼ 10.81, N¼ 14.01), will escape the Knudsen layer of plasma plume...AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650

  19. In-situ monitoring by reflective high energy electron diffraction during pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Blank, Dave H. A.; Rijnders, Guus J. H. M.; Koster, Gertjan; Rogalla, Horst

    1999-01-01

    Pulsed laser deposition (PLD) has developed during the past decade from a fast but limited preparation tool towards a competitive thin film deposition technique. One of the advantages above other techniques is the possibility of growth at relative high background pressure. There is a large freedom in choosing which kind of gas. Moreover, in a number of applications, the gaseous species in the background pressure are part of the elements to be grown, e.g., oxygen in the case of high Tc superconductors. However, the advantage of relative high pressures leads to restrictions of using standard diagnostics and monitoring of the film growth, e.g., reflective high energy electron diffraction (RHEED). Here, a PLD chamber including an in-situ RHEED system is presented, which makes it possible to monitor and study the growth at standard PLD parameters. Using a two-stages differential pumped, magnetically shielded, extension tube mounted at the electron gun side and a special designed phosphor screen including CCD camera, real time monitoring by observation of RHEED oscillations could be established at pressures up to 50 Pa. In this paper the latest results on applying this technique on SrTiO 3 and YBa 2Cu 3O 7 will be presented. Additional to the usual diagnostics performed with RHEED, another phenomena can be observed. The pulsed way of deposition, characteristic for PLD, leads to relaxations in the intensity of the diffracted pattern due to the mobility of the deposited material. These relaxation times give extra information about relaxation, crystallization, and nucleation of the deposited material. The presented technique leads to a better understanding of the growth during pulsed laser deposition and, because of the possibility to monitor the growth, will make PLD competitive with other deposition techniques.

  20. In situ monitoring of electrical resistance during deposition of Ag and Al thin films by pulsed laser deposition: Comparative study

    NASA Astrophysics Data System (ADS)

    Abdellaoui, N.; Pereira, A.; Novotny, M.; Bulir, J.; Fitl, P.; Lancok, J.; Moine, B.; Pillonnet, A.

    2017-10-01

    In this study, the growth by pulsed laser deposition of thin films of nanometer thickness as well as clusters is presented. Two kinds of metals, namely Ag and Al, are investigated because of their different growth processes on SiO2. We show that by tuning the deposition rate and the background atmosphere, it is easily possible to obtain Ag clusters that exhibit plasmonic resonances at wavelengths shorter than 500 nm. It is further demonstrated that Al tends to perfectly wet the substrate when deposited under vacuum or gas pressure. In situ electrical resistance measurements are used to follow the growth during deposition, and conventional analysis techniques (AFM, SEM, absorption and ellipsometry spectroscopy) are used to control their properties.

  1. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  2. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition

    DOE PAGES

    Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; ...

    2016-11-21

    Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic propertiesmore » of β-Ga2O3 from 350 to 550 °C.« less

  3. Structural and chemical composition studies of pulsed laser deposited beta-Al-Mg thin films.

    PubMed

    Radziszewska, A

    2010-03-01

    In this work, scanning electron microscopy and transmission electron microscopy and also an energy-dispersive X-ray spectroscopy were used to examine the morphology, structure and chemical composition of the beta-Al(3)Mg(2) thin films. The beta-Al-Mg thin films were produced by pulsed laser deposition. For the laser fluence (q) of 1.6 J/cm(2) the amorphous structure was observed while for the higher fluence (13.8 J/cm(2)) nanocrystalline grains were visible. The micrometer-sized droplets were also observed in the films deposited at higher laser fluence. It was found that the thickness of beta-Al-Mg films was equal to 95 nm and 260 nm for laser fluence of 1.6 J/cm(2) and 13.8 J/cm(2), respectively. Energy-dispersive X-ray spectroscopy of thin films revealed that those that were deposited at 1.6 J/cm(2) were characterized by the congruent transfer of the composition of the target to the substrate (Si). However, the contents of aluminium and magnesium varied on the cross-section of films deposited at fluence of 13.8 J/cm(2).

  4. Random lasing of ZnO thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Cachoncinlle, C.; Hebert, C.; Perrière, J.; Nistor, M.; Petit, A.; Millon, E.

    2015-05-01

    Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10-2 oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm-2, a value lower than those classically reported for pulsed-laser deposition thin films.

  5. SERS activity of silver and gold nanostructured thin films deposited by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Agarwal, N. R.; Tommasini, M.; Fazio, E.; Neri, F.; Ponterio, R. C.; Trusso, S.; Ossi, P. M.

    2014-10-01

    Nanostructured Au and Ag thin films were obtained by nanosecond pulsed laser ablation in presence of a controlled Ar atmosphere. Keeping constant other deposition parameters such as target-to-substrate distance, incidence angle, laser wavelength and laser fluence, the film morphology, revealed by SEM, ranges from isolated NPs to island structures and sensibly depends on gas pressure (10-100 Pa) and on the laser pulse number (500-3 × 10). The control of these two parameters allows tailoring the morphology and correspondingly the optical properties of the films. The position and width of the surface plasmon resonance peak, in fact, can be varied with continuity. The films showed remarkable surface-enhanced Raman activity (SERS) that depends on the adopted deposition conditions. Raman maps were acquired on micrometer-sized areas of both silver and gold substrates selected among those with the strongest SERS activity. Organic dyes of interest in cultural heritage studies (alizarin, purpurin) have been also considered for bench marking the substrates produced in this work. Also the ability to detect the presence of biomolecules was tested using lysozyme in a label free configuration.

  6. Nanomechanical properties of NbN films prepared by pulsed laser deposition using nanoindendation

    NASA Astrophysics Data System (ADS)

    Mamun, M. A.; Farha, A. H.; Er, A. O.; Ufuktepe, Y.; Gu, D.; Elsayed-Ali, H. E.; Elmustafa, A. A.

    2012-03-01

    Structural and mechanical properties of niobium nitride thin films deposited by pulsed laser deposition were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. Niobium nitride was deposited on Si(1 0 0) by pulsed laser deposition (PLD) of Nb in nitrogen background. A Nanoindenter XP equipped with a dynamic contact module (DCM II) head was used in conjunction with the continuous stiffness method (CSM) in depth and load control modes to measure the hardness and modulus of the NbN thin films. NbN film reveals simple cubic δ-NbN structure with the corresponding reflections of (1 1 1), (2 0 0), and (2 2 0) planes. Highly textured NbN film shows a strong (1 1 1) preferred orientation. The NbN thin films depict polycrystalline structure, with a wide range of grain sizes that range from 15 to 40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420 ± 60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases monotonically from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

  7. Substrate dependent structural and magnetic properties of pulsed laser deposited Fe3O4 thin films.

    PubMed

    Goyal, Rajendra N; Kaur, Davinder; Pandey, Ashish K

    2010-12-01

    Nanocrystalline iron oxide thin films have been deposited on various substrates such as quartz, MgO(100), and Si(100) by pulsed laser deposition technique using excimer KrF laser (248 nm). The orientations, crystallite size and lattice parameters were studied using X-ray diffraction. The XRD results show that the films deposited on MgO and Si substrates are highly oriented and show only (400) and (311) reflections respectively. On the other hand, the orientation of the films deposited on quarts substrate changed from (311) to (400) with an increase in the substrate temperature from 400 degrees C to 600 degrees C, indicating thereby that the film growth direction is highly affected with nature of substrate and substrate temperature. The surface morphology of the deposited films was studied using Atomic Force Microscopy (AFM) and spherical ball like regular features of nanometer size grains were obtained. The magnetic properties were studied by Superconducting Quantum Interference Device (SQUID) magnetometer in the magnetic field +/- 6 Tesla. The magnetic field dependent magnetization (M-H) curves of all the Fe3O4 thin films measured at 5 K and 300 K show the ferrimagnetic nature. The electrochemical sensing of dopamine studied for these films shows that the film deposited on MgO substrate can be used as a sensing electrode.

  8. Nanostructured bioglass thin films synthesized by pulsed laser deposition: CSLM, FTIR investigations and in vitro biotests

    NASA Astrophysics Data System (ADS)

    Floroian, L.; Savu, B.; Stanciu, G.; Popescu, A. C.; Sima, F.; Mihailescu, I. N.; Mustata, R.; Sima, L. E.; Petrescu, S. M.; Tanaskovic, D.; Janackovic, Dj.

    2008-12-01

    We report the synthesis by pulsed laser deposition of thin structures of two bioactive glasses belonging to the SiO 2-Na 2O-K 2O-CaO-MgO-P 2O 5 system, on medical grade Ti substrates. We evaluated their biocompatibility after immersion in simulated body fluids and by performing cells adhesion tests. The films were characterized by confocal scanning laser microscopy and Fourier transform infrared spectrometry, before and after 30 and 46 days immersion in fluids. Our studies demonstrated that deposited coatings were degraded in simulated fluids. A new apatite layer was synthesized by ions changing with the fluid during the decomposition of bioglasses. We investigated after immersion in fluids cells adhesion and the cytoskelet organization of synthesized structures, by fluorescence microscopy. A good adhesion to bioglass coatings was evidenced.

  9. Negative ions: The overlooked species in thin film growth by pulsed laser deposition

    SciTech Connect

    Esposito, M.; Bator, M.; Lippert, T.; Schneider, C. W.; Wokaun, A.; Doebeli, M.

    2011-11-07

    Plasma plume species from a ceramic La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target were studied by plasma mass spectrometry as a function of laser fluence, background gas, and deposition pressure to understand the interplay between plasma composition and oxide thin film growth by pulsed laser deposition. The plume composition reveals a significant contribution of up to 24% of negative ions, most notably using a N{sub 2}O background. The significance of negative ions for thin film growth is shown for La{sub 0.4}Ca{sub 0.6}MnO{sub 3} films grown in different background conditions where the best structural properties coincide with the largest amount of negative plasma species.

  10. Test-photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system.

    PubMed

    Hawlová, P; Verger, F; Nazabal, V; Boidin, R; Němec, P

    2015-03-23

    Amorphous thin films from Ge-As-Te system were prepared by pulsed laser deposition to study their intrinsic photostability, morphology, chemical composition, structure and optical properties. Photostability of fabricated layers was studied by spectroscopic ellipsometry within as-deposited as well as relaxed (annealed) layers. For irradiation, laser sources operating at three wavelengths in band gap region of the studied materials were employed. The results show that lowest values of photorefraction accompanied with lowest changes of band gap values were exhibited by Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability in relaxed state. The structure of the films is discussed based on Raman scattering spectroscopy data.

  11. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    DTIC Science & Technology

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  12. Nonstoichiometric material transfer in the pulsed laser deposition of LaAlO{sub 3}

    SciTech Connect

    Droubay, T. C.; Qiao, L.; Kaspar, T. C.; Engelhard, M. H.; Shutthanandan, V.; Chambers, S. A.

    2010-09-20

    Inequivalent angular distributions have been found for La and Al in the ablation plume from LaAlO{sub 3} single crystal targets using a KrF laser during pulsed laser deposition. Angular distributions and stoichiometries in the condensate were measured and reveal decidedly nonstoichiometric transfer from target to substrate over most of the angular range. Composition varied dramatically for plume angles parallel to the long axis of the laser spot with the on-axis position exhibiting a peak in the La/Al atom ratio at {approx}1.5. The distributions were more diffuse in the perpendicular direction. Stoichiometric LaAlO{sub 3} was found in the condensate only at an extreme off-axis position.

  13. Atmospheric pulsed laser deposition and thermal annealing of plasmonic silver nanoparticle films.

    PubMed

    Khan, T M; Mujawar, M A; Siewerska, K E; Pokle, A; Donnelly, T; McEvoy, N; Duesberg, G S; Lunney, J G

    2017-09-08

    A new method for pulsed laser deposition of plasmonic silver nanoparticle (NP) films in flowing gas at atmospheric pressure is described. The ablation was done using an excimer laser at 248 nm. Fast optical imaging shows that the ablation plume is captured by the flowing gas, and is expected to form a NP aerosol, which is carried 5-20 mm to the substrate. The dependence of the deposition rate on laser fluence, gas flow velocity, and target-substrate distance was investigated using electron microscopy and absorption spectroscopy of the deposited films. The NP films were annealed in argon and hydrogen at 400 °C, and in air for temperatures in the range 200 °C-900 °C, leading to strong enhancement, and narrowing of the surface plasmon resonance. The films were used for surface enhanced Raman spectroscopy of a 10(-5) molar solution of Rhodamine 6G; films annealed in air at 400 °C were five times more sensitive than the as-deposited films.

  14. Synthesis of functionally graded bioactive glass-apatite multistructures on Ti substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tanaskovic, D.; Jokic, B.; Socol, G.; Popescu, A.; Mihailescu, I. N.; Petrovic, R.; Janackovic, Dj.

    2007-12-01

    Functionally graded glass-apatite multistructures were synthesized by pulsed laser deposition on Ti substrates. We used sintered targets of hydroxyapatite Ca 10(PO 4) 6(OH) 2, or bioglasses in the system SiO 2-Na 2O-K 2O-CaO-MgO-P 2O 5 with SiO 2 content of either 57 wt.% (6P57) or 61 wt.% (6P61). A UV KrF* ( λ = 248 nm, τ > 7 ns) excimer laser source was used for the multipulse laser ablation of the targets. The hydroxyapatite thin films were obtained in H 2O vapors, while the bioglass layers were deposited in O 2. Thin films of 6P61 were deposited in direct contact with Ti, because Ti and this glass have similar thermal expansion behaviors, which ensure good bioglass adhesion to the substrate. This glass, however, is not bioactive, so yet more depositions of 6P57 bioglass and/or hydroxyapatite thin films were performed. All structures with hydroxyapatite overcoating were post-treated in a flux of water vapors. The obtained multistructures were characterized by various techniques. X-ray investigations of the coatings found small amounts of crystalline hydroxyapatite in the outer layers. The scanning electron microscopy analyses revealed homogeneous coatings with good adhesion to the Ti substrate. Our studies showed that the multistructures we had obtained were compatible with further use in biomimetic metallic implants with glass-apatite coating applications.

  15. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rebollar, Esther; Martínez-Tong, Daniel E.; Sanz, Mikel; Oujja, Mohamed; Marco, José F.; Ezquerra, Tiberio A.; Castillejo, Marta

    2016-11-01

    We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I-V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm2 resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm2, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  16. Structural and optical properties of manganese oxide thin films deposited by pulsed laser deposition at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Jamil, H.; Khaleeq-ur-Rahman, M.; Dildar, I. M.; Shaukat, Saima

    2017-09-01

    We report the use of pulsed laser deposition (PLD) to grow manganese oxide thin films at a fixed low oxygen pressure at different temperatures on silicon (1 0 0) substrates. Structural properties of the thin films were examined using x-ray diffraction and Fourier transform infrared spectroscopy. Surface morphology and topography of the films was determined using atomic force microscopy and optical microscopy, while optical properties of the thin films were studied using spectroscopic ellipsometry. It was found that PLD is a convenient technique to deposit different phases of manganese oxide by tuning the deposition temperature. All measured physical properties such as morphology, topography, crystallite size, and optical band gap were clearly dependent on the substrate temperature chosen.

  17. Engineering of pulsed laser deposited calcium phosphate biomaterials in controlled atmospheres

    NASA Astrophysics Data System (ADS)

    Drukteinis, Saulius E.

    Synthetic calcium phosphates (CAP) such as hydroxyapatite (HA) have been used as regenerative bone graft materials and also as thin films to improve the integration of biomedical implant devices within skeletal tissue. Pulsed laser deposition (PLD) can deposit crystalline HA with significant adhesion on titanium biomaterials. However, there are PLD processing constraints due to the complex physical and chemical interactions occurring simultaneously during PLD, which influence ablation plume formation and development. In this investigation PLD CAP films were engineered with a focus on novel decoupling of partial pressure of H2O (g) ( PH2O ) from total background pressure, in combination with substrate heat treatment and laser energy density control. Characterization of these films was performed with X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, and Optical Profilometry. In vitro cellular adhesion testing was also performed using osteoblast (MC3T3) cell lines to evaluate adhesion of bone-forming cells on processed PLD CAP samples. Preferred a-axis orientation films were deposited in H2O (g) saturated atmospheres with reduced laser fluence (< 4 J/cm2). Crystalline HA/tetracalcium phosphate (TTCP) films were deposited in H2O ( g)-deficient atmospheres with higher laser fluence (> 3 J/cm 2). Varied PH2O resulted in control of biphasic HA/TTCP composition with increasing TTCP at lower PH2O . These were dense continuous films composed of micron-scale particles. Cellular adhesion assays did not demonstrate a significant difference between osteoblast adhesion density on HA films compared with biphasic HA/TTCP films. Room temperature PLD at varied PH2O combined with furnace heat treatment resulted in controlled variation in surface amplitude parameters including surface roughness (S a), root mean square (Sq), peak to valley height (St), and ten-point height ( Sz). These discontinuous films were

  18. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  19. Pulsed laser deposition of tungsten carbide thin films on silicon (100) substrate

    NASA Astrophysics Data System (ADS)

    Suda, Y.; Nakazono, T.; Ebihara, K.; Baba, K.

    1997-01-01

    A method of synthesizing tungsten carbide (WC) thin films by a pulsed YAG laser deposition is investigated. WC thin films are deposited on silicon (100) substrates by using WC5%Co alloy targets. Glancing angle X-ray diffraction shows that the strong peaks of W 2C appear at the substrate temperature of 500°C. Beside the strong peaks of W 2C, weak peaks of WC and W 3Co 3C appear at the substrate temperature of 650°C. Auger electron spectroscopy shows that the almost stoichiometric WC films are deposited at the methane gas pressure of 1.0 Pa. Morphological features of the samples have been obtained by employing the technique of scanning electron microscopy. X-ray photoelectron spectroscopy has been used to obtain structural and compositional information about the samples.

  20. Osteoblast behavior on various ultra short pulsed laser deposited surface coatings.

    PubMed

    Qu, Chengjuan; Myllymaa, Sami; Prittinen, Juha; Koistinen, Arto P; Lappalainen, Reijo; Lammi, Mikko J

    2013-04-01

    Ultra short pulsed laser deposition technique was utilized to create amorphous diamond, alumina and carbon nitride, and two different titania coatings on silicon wafers, thus producing five different surface deposited films with variable physico-chemical properties. The surface characterizations, including the roughness, the contact angle and the zeta potential measurements were performed before we tested the growth properties of human osteoblast-like Saos-2 cells on these surfaces (three separate experiments). The average roughness and hydrophobicity were the highest on titania-deposited surfaces, while carbon nitride was the most hydrophilic one. Osteoblasts on all surfaces showed a flattened, spread-out morphology, although on amorphous diamond the cell shape appeared more elongated than on the other surfaces. On rough titania, the area covered by the osteoblasts was smaller than on the other ones. Cell proliferation assay did not show any statistically significant differences. Copyright © 2012 Elsevier B.V. All rights reserved.

  1. Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

    SciTech Connect

    Wang Yunfei; Chen Xuekang; Li Zhonghua; Zheng Kuohai; Wang Lanxi; Feng Zhanzu; Yang Shengsheng

    2009-01-05

    High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

  2. Pulsed-laser deposition of particulate-free TiC coatings for tribological applications

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, G.; Adams, P. M.

    Hybrid bearings comprising ceramic or ceramic-coated steel balls and steel raceways can provide good fatigue life and resistance to wear. One of the coating materials that has received serious consideration in hybrid systems is titanium carbide (TiC). At present, the commercially available process for the deposition of TiC involves the heating of steel substrates to fairly high temperatures (>900 °C). The high-temperature process involves considerable costs and complexities that are associated with the post-deposition heat treatment and repolishing of the coated steels for bearing applications. Pulsed-laser deposition (PLD) is ideally suited to deposit TiC coatings on bearing steels at room temperature. However, it is well known that codeposition of particulates has been one of the most challenging problems of PLD. This is especially of concern when dealing with hard coatings for tribological applications. Here we describe a novel and extremely simple method of depositing high-quality, particulate-free TiC coatings on bearing steel surfaces that uses PLD. The method relies on a new non-line-of-sight deposition that uses a permanent magnet and prevents particulates from arriving at the substrate. The surface roughness of TiC films deposited on steels by way of this technique has an extremely low root mean square value of 1.6 nm. The TiC films have been extensively characterized for their morphology, chemical composition, and mechanical properties with scanning electron and atomic force microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and nanoindentation. Time-resolved emission has been used for the in situ characterization of the laser-ablated TiC plume and has resulted in the identification of various plume species as a function of laser parameters. The spectroscopic results are correlated to film growth and to our modified PLD method.

  3. Physical properties of a non-transparent cadmium oxide thick film deposited at low fluence by pulsed laser deposition

    SciTech Connect

    Quiñones-Galván, J.G.; Lozada-Morales, R.; Jiménez-Sandoval, S.; Camps, Enrique; and others

    2016-04-15

    Highlights: • A non-transparent cadmium oxide film has been deposited by pulsed laser deposition. • The CdO film is polycrystalline and highly oriented in the (2 0 0) direction. • Thermal treatment was applied in order to see the effect on its physical properties. - Abstract: A stable non-transparent CdO film was grown by pulsed laser deposition. The sample was thermally annealed at 500 °C in air. A (2 0 0) highly oriented polycrystalline film was obtained. The annealed sample has not preferred orientation. Scanning electron micrographs show a grain size reduction for the annealed sample. By Raman spectroscopy, the defects related second order vibrational modes of CdO were observed. Chemical composition analysis shows the presence of CdO together with a substoichiometric CdO{sub x} phase for the as-grown sample. For the annealed sample a compensation of oxygen vacancies was observed. Electrical resistivity measurements give a value of 8.602 × 10{sup −4} (Ω cm) for the as-grown film. For the annealed sample the electrical resistivity increased to a value of 9.996 × 10{sup −3} (Ω cm). Zero transmission has never been reported for CdO films. The photoluminescence spectra were measured in order to shed some light on the origin of the zero transmission.

  4. Epitaxial growth of metal fluoride thin films by pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Budal, J.D.; Chakoumakos, B.C.; Geohegan, D.B.; Puretzky, A.

    1995-12-01

    We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.

  5. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    NASA Astrophysics Data System (ADS)

    Krämer, André; Engel, Sebastian; Sangiorgi, Nicola; Sanson, Alessandra; Bartolomé, Jose F.; Gräf, Stephan; Müller, Frank A.

    2017-03-01

    Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I-V measurements were performed.

  6. Pulsed laser deposition of tin oxide thin films for field emission studies

    NASA Astrophysics Data System (ADS)

    Jadhav, H.; Suryawanshi, S.; More, M. A.; Sinha, S.

    2017-10-01

    A comparative study of Pulsed Laser Deposition (PLD) based Tin Oxide (SnO2) thin films deposited at various substrate deposition temperature (Ts) has been performed. Surface morphology of the films was studied by Field Emission Scanning Electron Microscopy (FESEM) and surface composition of the films by X-ray PhotoelectronSpectroscopy (XPS) technique. X-ray diffraction (XRD) technique has been used to investigate crystalline nature of the deposited films. Field Emission (FE) properties of the SnO2 films were measured and a significantly low turn on field (2.1 V/μm) (field necessary to draw an emission current density of 10 μA/cm2) for films deposited at high substrate temperature (700 °C) was observed. Field enhancement factor estimated from FE studies was found to strongly depend on the surface morphology of the films. Overall good field emission current stability was observed for all SnO2 films. Dependence of FE properties on surface morphology, surface composition and deposition environment has been observed and analyzed systematically. Significantly low turn on field with high emission current density and field enhancement factor exhibited by films deposited when substrate was maintained at 700 °C has been mainly correlated to surface morphology and surface composition.

  7. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

    NASA Astrophysics Data System (ADS)

    Duta, L.; Stan, G. E.; Stroescu, H.; Gartner, M.; Anastasescu, M.; Fogarassy, Zs.; Mihailescu, N.; Szekeres, A.; Bakalova, S.; Mihailescu, I. N.

    2016-06-01

    We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN "seed" layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4-2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0-5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

  8. Characterization of nanosecond, femtosecond and dual pulse laser energy deposition in air for flow control and diagnostic applications

    NASA Astrophysics Data System (ADS)

    Limbach, Christopher M.

    The non-resonant heating of gases by laser irradiation and plasma formation has been under investigation since the development of 100 megawatt peak power, Q-switched, nanosecond pulse duration lasers and the commensurate discovery of laser air sparks. More recently, advances in mode-locking and chirped pulse amplification have led to commercially available 100 gigawatt peak power, femtosecond pulse duration lasers with a rapidly increasing number of applications including remote sensing, laser spectroscopy, aerodynamic flow control, and molecular tagging velocimetry and thermometry diagnostics. This work investigates local energy deposition and gas heating produced by focused, non-resonant, nanosecond and femtosecond laser pulses in the context of flow control and laser diagnostic applications. Three types of pulse configurations were examined: single nanosecond pulses, single femtosecond pulses and a dual pulse approach whereby a femtosecond pre-ionizing pulse is followed by a nanosecond pulse. For each pulse configuration, optical and laser diagnostic techniques were applied in order to qualitatively and quantitatively measure the plasmadynamic and hydrodynamic processes accompanying laser energy deposition. Time resolved imaging of optical emission from the plasma and excited species was used to qualitatively examine the morphology and decay of the excited gas. Additionally, Thomson scattering and Rayleigh scattering diagnostics were applied towards measurements of electron temperature, electron density, gas temperature and gas density. Gas heating by nanosecond and dual pulse laser plasmas was found to be considerably more intense than femtosecond plasmas, irrespective of pressure, while the dual pulse approach provided substantially more controllability than nanosecond pulses alone. In comparison, measurements of femtosecond laser heating showed a strong and nonlinearly dependence on focusing strength. With comparable pulse energy, measurements of maximum

  9. Third order nonlinearity in pulsed laser deposited LiNbO{sub 3} thin films

    SciTech Connect

    Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal E-mail: svrsp@uohyd.ernet.in; Raju, K. C. James E-mail: svrsp@uohyd.ernet.in

    2016-05-06

    Lithium niobate (LiNbO{sub 3}) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

  10. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    SciTech Connect

    Sposito, A. Eason, R. W.; Gregory, S. A.; Groot, P. A. J. de

    2014-02-07

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi{sub 2}O{sub 3} or a CeO{sub 2} target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO{sub 2} phase.

  11. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G. I.; Giapintzakis, J.

    2013-08-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10-3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

  12. Magnetism of pure, disordered carbon films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Höhne, R.; Han, K.-H.; Esquinazi, P.; Setzer, A.; Semmelhack, H.; Spemann, D.; Butz, T.

    2004-05-01

    We have studied the magnetization of disordered, pure carbon films in order to search for signs of para-, ferro-or antiferromagnetism. Carbon films on silicon substrates were produced by pulsed laser deposition in high vacuum and at room temperature using pressed ultra-clean graphite powder as target. The magnetization shows a Curie-Weiss behaviour added to a temperature-independent term. Annealing the films at 1000°C and in high-vacuum eliminates completely the Curie-Weiss contribution. We compare our results with those recently obtained in activated carbon fibers.

  13. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    SciTech Connect

    Zhang, H.X.; Feng, P.X. Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-08

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline.

  14. InGaZnO semiconductor thin film fabricated using pulsed laser deposition.

    PubMed

    Chen, Jiangbo; Wang, Li; Su, Xueqiong; Kong, Le; Liu, Guoqing; Zhang, Xinping

    2010-01-18

    The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

  15. Growth of epitaxial bismuth and gallium substituted lutetium iron garnet films by pulsed laser deposition

    SciTech Connect

    Leitenmeier, Stephan; Heinrich, Andreas; Lindner, Joerg K. N.; Stritzker, Bernd

    2006-04-15

    Epitaxial bismuth and gallium substituted lutetium iron garnet thin films have been grown on (100) oriented gadolinium gallium garnet Gd{sub 3}Ga{sub 5}O{sub 12} substrates by pulsed laser deposition. The films have been studied using x-ray diffraction, high resolution x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and electron diffraction. We obtained smooth films with thicknesses between 0.3 and 1.0 {mu}m showing good crystalline quality and epitaxial growth.

  16. Nucleation and growth of SnO2 nanocrystallites prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Chen, Z. W.; Lai, J. K. L.; Shek, C. H.; Chen, H. D.

    2005-10-01

    We report in detail the synthesis and microstructural characterization of SnO2 nanocrystallites produced using a pulsed laser deposition (PLD) method. A detailed observation of the microstructural evolution of the as-prepared SnO2 nanocrystallites has been carried out, and their grain sizes, shapes, crystallography characteristics, and morphologies have been also determined. The nucleation and growth processes of the SnO2 nanocrystallites are discussed in more detail in order to examine how the PLD techniques and conditions affect the evolution of grain sizes, shapes, crystallography characteristics and morphologies.

  17. Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

    SciTech Connect

    Shin, Byungha; Aziz, Michael J.

    2007-08-15

    We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown.

  18. Post-Deposition Induced Conductivity in Pulsed Laser Irradiated Metal Doped Zinc Oxide Films

    SciTech Connect

    Wang, Lisa J; Exarhos, Gregory J

    2009-12-03

    The optical and electrical properties of doped solution-deposited and rf sputter-deposited thin metal oxide films were investigated following post deposition pulsed laser irradiation. Solution deposited films were annealed at 450 ºC. Following the heating regiment, the transparent metal oxide films were subjected to 355 nm pulsed Nd:YAG laser irradiation (4 nsec pulsewidth) at fluences between 5 and 150 mJ/cm2. Irradiation times at pulse frequencies of 30 Hz ranged from seconds to tens of minutes. Film densification, index change and a marked increase in conductivity were observed following irradiation in air and under vacuum of Al:ZnO (AZO), Ga:ZnO (GZO), and In:ZnO (IZO) films deposited on silica substrates. Despite the measured increase in conductivity, all films continued to show high transparency on the order of 90% at wavelengths from the band edge well into the near infrared region of the spectrum. Laser energies required for turning on the conductivity of these films varied depending upon the dopant. Irradiations in air yielded resistivity measurements on the order of 16.cm. Resistivities of films irradiated under vacuum were on the order of 0.1.cm. The increase in conductivity can be attributed to the formation of oxygen vacancies and subsequent promotion of free carriers into the conduction band. All irradiated films become insulating after around 24 hours. Oxygen atoms in air become reduced by electrons in the metal conduction band and diffuse into the vacancies in the lattice. The rate of this reduction process depends on the type of dopant. This work also sheds light on the damage threshold, correlating the optical properties with the presence of free carriers that have been introduced into the conduction band. All films were characterized by means of UV-VIS-NIR transmission spectroscopy, visible and UV Raman spectroscopy and Hall measurements. Analysis of interference fringes in measured transmission spectra allowed film density and refractive index

  19. Decoration of silica nanowires with gold nanoparticles through ultra-short pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Caricato, A. P.; Cesaria, M.; Resta, V.; Taurino, A.; Colombelli, A.; Leo, C.; Klini, A.; Manousaki, A.; Convertino, A.; Rella, R.; Martino, M.; Perrone, A.

    2017-10-01

    The ablation of a metal target at laser energy densities in the range of 1-10 TW/cm2 leads to the generation of nanoparticles (NP) of the ablated material. This aspect is of particular interest if the immobilization of NPs on three-dimensional (3D) substrates is necessary as for example in sensing applications. In this work the deposition of Au NP by irradiation of a Au bulk target with a sub-picosecond laser beam (500 fs; 248 nm; 10 Hz) on 2D (silica and Si(100)) and 3D substrates (silica nanowire forests) is reported for different number of laser pulses (500, 1000, 1500, 2000, 2500). A uniform coverage of small Au NPs (with a diameter of few nm) on both kinds of substrates has been obtained using a suitable number of laser pulses. The presence of spherical droplets, with a diameter ranging from tens of nm up to few μm was also detected on the substrate surface and their presence can be explained by the weak electron-phonon coupling of Au. The optical characterization of the samples on 2D and 3D substrates evidenced the surface plasmon resonance peak characteristic of the Au NPs although further improvements of the size-distribution are necessary for future applications in sensing devices.

  20. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.

  1. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributedmore » to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  2. Effect of deposition time on structural and magnetic properties of pulse laser deposited hard-soft composite films

    NASA Astrophysics Data System (ADS)

    Satalkar, M.; Kane, S. N.; Pasko, A.; LoBue, M.; Mazaleyrat, F.

    2016-10-01

    Hard-soft composite (BaFe12O19:Mg0.1Ni0.3Zn0.6Fe2O4 (2:1) films, were deposited by ‘Pulsed Laser Deposition’ (PLD) technique on Si (100) substrate using different deposition time - 30, 60, 90 and 120 minutes. Influence of deposition time on structural and magnetic properties were studied via X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). XRD confirms the presence of soft and hard phases in all the prepared thin films. Small amount of secondary phase - Fe2O3 is also detected in all the thin films except for the deposition time - 90 mins. With deposition time average grain diameter of both hard (BaFe12O19) and soft (Mg0.1Ni0.3Zn0.6Fe2O4) phase increases. Increase in the distance between the magnetic ions (Ni2+ and Fe3+) at tetrahedral (A) and octahedral [B] site leads to increase in the hopping length at A and B site except for the the deposition time of 60 minutes. Magnetic measurements shows that the coercivity and magnetization of the prepared thin films respectively ranges between 112.07 - 213.03 Oe and 1.4 x 10-7 - 3.15 x 10-7 Am2.

  3. Sequential pulsed laser deposition of homoepitaxial SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Groenendijk, D. J.; Gariglio, S.

    2016-12-01

    The control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition, offsetting the importance of growth conditions on the film stoichiometry. In this work, we demonstrate that the cation stoichiometry of SrTiO3 thin films can be finely tuned by sequential deposition from SrO and TiO2 targets. Homoepitaxial SrTiO3 films were deposited at different substrate temperatures and Ti/Sr pulse ratios, allowing the establishment of a growth window for stoichiometric SrTiO3. The growth kinetics and nucleation processes were studied by reflection high-energy electron diffraction and atomic force microscopy, providing information about the growth mode and the degree of off-stoichiometry. At the optimal (stoichiometric) growth conditions, films exhibit atomically flat surfaces, whereas off-stoichiometry is accommodated by crystal defects, 3D islands, and/or surface precipitates depending on the substrate temperature and the excess cation. This technique opens the way to precisely control stoichiometry and doping of oxide thin films.

  4. Yttria-Stabilized Zirconia Ceramic Deposition on SS430 Ferritic Steel Grown by PLD - Pulsed Laser Deposition Method

    NASA Astrophysics Data System (ADS)

    Khalid Rivai, Abu; Mardiyanto; Agusutrisno; Suharyadi, Edi

    2017-01-01

    Development of high temperature materials are one of the key issues for the deployment of advanced nuclear reactors due to higher temperature operation. One of the candidate materials for that purpose is ceramic-coated ferritic steel that one of the functions is to be a thermal barrier coating (TBC). Thin films of YSZ (Ytrria-Stabilized Zirconia) ceramic have been deposited on a SS430 ferritic steel using Pulsed Laser Deposition (PLD) at Center For Science and Technology of Advanced Materials laboratory – National Nuclear Energy Agency of Indonesia (BATAN). The thin film was deposited with the chamber pressure range of 200-225 mTorr, the substrate temperature of 800oC, and the number of laser shots of 3×104, 6×104 and 9×104. Afterward, the samples were analyzed using Scanning Electron Microscope – Energy Dispersive X-ray Spectroscope (SEM-EDS), X-Ray Diffractometer (XRD), Atomic Force Microscope (AFM) and Vickers hardness tester. The results showed that the YSZ could homogeneously and sticky deposited on the surface of the ferritic steel. The surfaces were very smoothly formed with the surface roughness was in the range of 70 nm. Furthermore, thickness, composition of Zr4+ dan Y3+, the crystallinity, and hardness property was increased with the increasing the number of the shots.

  5. Pulsed laser deposition of porous N-carbon supported cobalt (oxide) thin films for highly efficient oxygen evolution.

    PubMed

    Bayatsarmadi, Bita; Zheng, Yao; Casari, Carlo Spartaco; Russo, Valeria; Qiao, Shi-Zhang

    2016-09-29

    Identification of efficient non-precious metal catalysts for the oxygen evolution reaction (OER) remains a great challenge. Here we report robust cobalt (oxide) nanoparticles deposited on a porous nitrogen-doped carbon (N-carbon) film prepared by pulsed laser deposition under a reactive background gas, which exhibit highly efficient OER performance with a low overpotential and high stability.

  6. Multi-beam pulsed laser deposition for advanced thin-film optical waveguides

    NASA Astrophysics Data System (ADS)

    Eason, R. W.; May-Smith, T. C.; Sloyan, K. A.; Gazia, R.; Darby, M. S. B.; Sposito, A.; Parsonage, T. L.

    2014-01-01

    We discuss our progress in the use of multiple laser beams and multiple targets for the pulsed laser deposition of thin films for waveguide laser and magneto-optic applications. In contrast to the more widely used single-beam/single-target geometries, having more than one laser-produced plume can allow tuning of the material properties and complex engineering of the deposited thin films. For optical applications—the majority of the work reported here—dopants can be selectively introduced, lattice mismatch and residual strain can be compensated, which is an important factor for successful growth of thin films of ∼ tens of microns thickness, and refractive index values can be adjusted for fabrication of sophisticated waveguiding structures. We discuss mixed, layered, superlattice and Bragg reflector growth, which involve out-of-plane engineering of the film structure, and in-plane engineered geometries for designs relevant to thin-film disc lasing devices. Finally we briefly discuss our most recent use of multi-plume growth for magneto-optic thin films, which involves compositional tuning of final magnetic properties.

  7. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E.

    1995-01-01

    A peculiarity of the pulsed laser deposition technique of thin-film growth which limits its applicability is the very rapid drop of resulting film thickness as a function of distance from the deposition axis. This is due to the narrow forward peaking of the emission plume characteristic of the laser ablation process. The plume is usually modeled by a cos(sup n) theta function with n greater, and in some cases, much higher, than 1. Based on this behavior, a method is presented to substantially enhance coverage uniformity in substrate zones of the order of the target-substrate distance h, and to within a specified thickness tolerance. Essentially, target irradiation is caused to form an annular emission source instead of the usual spot. By calculating the resulting thickness profiles, an optimum radius s is found for the annular source, corresponding to a given power in the emission characteristic and a given value of h. The radius of this annulus scales with h. Calculated numerical results for optimal s/h ratios corresponding to a wide range of values for n are provided for the case of +/- 1% tolerance in deviation from the thickness at deposition axis. Manners of producing annular illumination of the target by means of conic optics are presented for the case of a laser beam with radially symmetric profile. The region of uniform coverage at the substrate can be further augmented by extension of the method to multiple concentric annular sources. By using a conic optic of novel design, it is shown also how a single-laser beam can be focused onto a target in the required manner. Applicability of the method would be limited in practice by the available laser power. On the other hand, the effective emitting area can be large, which favors extremely high growth rates, and since growth can occur uniformly over the whole substrate for each laser pulse, single-shot depositions with substantial thicknesses are possible. In addition, the simultaneity of growth over the

  8. Nonthermal Laser Assisted Ge Quantum Dot Formation on Si(100)-2x1 by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali; Elsayed-Ali, Hani

    2009-11-01

    The effect of laser-induced electronic excitations on the self-assembly of Ge quantum dots (QDs) on Si(100)-2x1 grown by pulsed laser deposition is studied. The samples were cleaned by using modified Shiraki method and then transferred into the deposition chamber. The vacuum system was then pumped down, baked for at least 24 hours, and the sample was then flashed to 1200 C in order for the 2x1 reconstruction to form. The experiment was conducted under a pressure ˜1x10-10 Torr. A Q-switched Nd:YAG laser was used to ablate a Ge target. In-situ RHEED and STM and ex-situ AFM were used to study the morphology of the grown QD. The dependence of the QD morphology on substrate temperature and ablation and excitation laser energy density was studied. Electronic excitation is shown to affect the surface morphology. Laser irradiation of the Si substrate is shown to decrease the roughness of films grown at a substrate temperature of ˜400 ^oC. Electronic excitation also affected the surface coverage, cluster density, uniformity and decreased the temperature required to form 3-dimensional QDs to ˜250 C at which no crystalline film formation is possible without excitation laser. Possible mechanisms such as two hole localization following the phonon kick will be discussed.

  9. Nonthermal Laser Assisted Ge Quantum Dot Formation on Si(100)-2x1 by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali; Elsayed-Ali, Hani

    2009-11-01

    The effect of laser-induced electronic excitations on the self-assembly of Ge quantum dots (QDs) on Si(100)-2x1 grown by pulsed laser deposition is studied. The samples were first cleaned by using modified Shiraki method and then transferred into the deposition chamber. The vacuum system was then pumped down, baked for at least 24 hours, and the sample was then flashed to 1200 C in order for the 2x1 reconstruction to form. The experiment was conducted under a pressure ˜1x10-10 Torr. A Q-switched Nd:YAG laser was used to ablate a Ge target. In-situ RHEED and STM and ex-situ AFM were used to study the morphology of the grown QD. The dependence of the QD morphology on substrate temperature and ablation and excitation laser energy density was studied. Electronic excitation is shown to affect the surface morphology. Laser irradiation of the Si substrate is shown to decrease the roughness of films grown at a substrate temperature of ˜400 ^oC. Electronic excitation also affected the surface coverage, cluster density, uniformity and decreased the temperature required to form 3-dimensional QDs to ˜250 C at which no crystalline film formation is possible without excitation laser. Possible mechanisms such as two hole localization following the phonon kick will be discussed.

  10. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  11. High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Caifeng; Li, Qingshan; Wang, Jisuo; Zhang, Lichun; Zhao, Fengzhou; Dong, Fangying

    2016-07-01

    ZnS/Au/ZnS tri-layer films were deposited on quartz glass substrates by pulsed laser deposition. The influence of Au layer thickness on optical and electrical properties of the tri-layer ZnS/Au/ZnS was studied. X-ray diffractometer (XRD) and scanning electron microscope were employed to characterize the crystalline structure and surface morphology of the tri-layer films. Hall measurements, ultraviolet and visible spectrophotometer, four-point probe were used to explore the optoelectronic properties of the ZnS/Au/ZnS. The increase of Au layer thickness resulted in the decreased resistivity, the increased carrier concentration, and the declined transmittance in the visible light region.

  12. Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

    NASA Astrophysics Data System (ADS)

    Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R. D.

    2013-01-01

    Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

  13. Pulsed laser deposition of bioactive glass films in ammonia and disilane atmospheres

    NASA Astrophysics Data System (ADS)

    Borrajo, J. P.; González, P.; Liste, S.; Serra, J.; Chiussi, S.; León, B.; Pérez-Amor, M.

    2005-07-01

    The effect of two reactive gases on the properties of bioactive glass thin films produced by pulsed laser deposition (PLD) was studied. The ablation of a bioactive silica-based glass was carried out by an ArF excimer laser ( λ = 193 nm, Φ = 4.2 J cm -2, τ = 25 ns, f = 10 Hz) at various pressures of Si 2H 6/Ar and NH 3/Ar reactive mixtures. The bonding configuration and chemical environment of the resulting coatings were followed by Fourier transform infrared spectroscopy (FT-IR). The composition and bond arrangement of bioactive glass films were tuned by varying the chamber atmosphere. The results show how to adjust film characteristics for osteointegration of implants.

  14. Shape effect in FMR of Ni-Co-Mn-In layers obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dubiel, Łukasz; Kuzma, Marian; Stefaniuk, Ireneusz; Wisz, Grzegorz; Wal, Andrzej

    2016-12-01

    We have studied thin layers of Ni50-xCoxMn50-yIny alloys on (001) Si substrate obtained by pulsed laser deposition method (PLD) using YAG Nd3+ laser operating at second harmonic. The target was bulk Ni50-xCoxMn50-yIny (x = 5, y = 14.5) alloy prepared by induction melting of pure elements under argon atmosphere. Magnetic properties were investigated on Bruker X band EPR spectrometer (9.36 GHz) at room temperature. The magnetic resonance spectrum consists of non-symmetric lines with resonance field within wide field range (2500-4800 Gs) depending on the orientation of the static field in the plane perpendicular to the layer. Calculated spectroscopic splitting factor g = 2.09.

  15. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  16. Pulsed Laser Deposition Processing of Improved Titanium Nitride Coatings for Implant Applications

    NASA Astrophysics Data System (ADS)

    Haywood, Talisha M.

    Recently surface coating technology has attracted considerable attention of researchers to develop novel coatings with enhanced functional properties such as hardness, biocompatibility, wear and corrosion resistance for medical devices and surgical tools. The materials currently being used for surgical implants include predominantly stainless steel (316L), cobalt chromium (Co-Cr), titanium and its alloys. Some of the limitations of these implants include improper mechanical properties, corrosion resistance, cytotoxicity and bonding with bone. One of the ways to improve the performance and biocompatibility of these implants is to coat their surfaces with biocompatible materials. Among the various coating materials, titanium nitride (TiN) shows excellent mechanical properties, corrosion resistance and low cytotoxicity. In the present work, a systematic study of pulsed laser ablation processing of TiN coatings was conducted. TiN thin film coatings were grown on commercially pure titanium (Ti) and stainless steel (316L) substrates at different substrate temperatures and different nitrogen partial pressures using the pulsed laser deposition (PLD) technique. Microstructural, surface, mechanical, chemical, corrosion and biological analysis techniques were applied to characterize the TiN thin film coatings. The PLD processed TiN thin film coatings showed improvements in mechanical strength, corrosion resistance and biocompatibility when compared to the bare substrates. The enhanced performance properties of the TiN thin film coatings were a result of the changing and varying of the deposition parameters.

  17. Dysprosium-doped chalcogenide films prepared by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Nazabal, Virginie; Nemec, Petr; Jedelský, Jaroslav; Duverger, Claire; Le Person, Jenny; Adam, Jean-Luc; Frumar, Miloslav

    2004-08-01

    The chalcogenide glasses possess interesting optical properties such as a good transmission in the nIR-mIR wavelength region, high linear and non-linear refractive index and photosensitivity, which allows holographic patterns writing. Moreover, their low-phonon energy makes them good candidates for optical amplification. In order to design an integrated circuit on chalcogenide glasses, the pulsed laser deposition (PLD) technique is a suitable method for deposition of glass with complex composition. Amorphous Ge-Ga-Sb-S films (pure and dysprosium doped) were prepared by PLD using different energy of the laser beam pulses. Compositional, morphological and structural characteristics of the films were studied by MEB-EDS, atomic force, scanning electron microscopy, X-ray diffraction and Raman spectroscopy analyses. The photo-luminescence of Dy doped Ge-Ga-Sb-S films was investigated. The emission band centered at 1340 nm corresponding to 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions was identified in luminescence spectra of dysprosium doped thin films. A study of the optical properties and the effects of exposure and thermal annealing below the glass transition temperature on the optical parameters of thin films from the Ge-Ga-Sb-S system will be presented.

  18. Towards new binary compounds: Synthesis of amorphous phosphorus carbide by pulsed laser deposition

    SciTech Connect

    Hart, Judy N.; May, Paul W.; Allan, Neil L.; Hallam, Keith R.; Claeyssens, Frederik; Fuge, Gareth M.; Ruda, Michelle; Heard, Peter J.

    2013-02-15

    We have recently undertaken comprehensive computational studies predicting possible crystal structures of the as yet unknown phosphorus carbide as a function of composition. In this work, we report the synthesis of amorphous phosphorus-carbon films by pulsed laser deposition. The local bonding environments of carbon and phosphorus in the synthesised materials have been analysed by x-ray photoelectron spectroscopy; we have found strong evidence for the formation of direct P-C bonding and hence phosphorus carbide. There is a good agreement between the bonding environments found in this phosphorus carbide material and those predicted in the computational work. In particular, the local bonding environments are consistent with those found in the {beta}-InS-like structures that we predict to be low in energy for phosphorus:carbon ratios between 0.25 and 1. Highlights: Black-Right-Pointing-Pointer We have synthesised amorphous phosphorus-carbon films by pulsed laser deposition. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy results indicate formation of direct P-C bonds and hence phosphorus carbide. Black-Right-Pointing-Pointer Local bonding environments are consistent with those in predicted structures.

  19. Biological stability and osteoconductivity in rabbit tibia of pulsed laser deposited hydroxylapatite coatings.

    PubMed

    Peraire, C; Arias, J L; Bernal, D; Pou, J; León, B; Arañó, A; Roth, W

    2006-05-01

    A comparative study of the biological stability and the osteoconductivity of hydroxylapatite (HA) coatings produced by pulsed laser deposition (PLD) and plasma spraying (PS) was conducted. Three different implant groups were used: grit-blasted titanium rods coated with HA-PLD (2-microm-thick), grit-blasted titanium rods coated with HA-PS (50-microm-thick), and uncoated. Implantation took place into the proximal tibia of 12 mature New Zealand White rabbits for 24 weeks. Samples were evaluated using descriptive histology and histomorphometry. While HA-PS implants showed considerable instability and reduction in thickness after 24 weeks, but no statistical difference to the titanium group, the HA-PLD group showed a significant higher amount of bone apposition (Scheffé test, p<0.05) than the other two groups, without signs of degradation or dissolution. Remarkably, after 6 months, the almost intact thin pulsed laser deposited coating could be observed by electron microscopy in extended areas. Copyright (c) 2006 Wiley Periodicals, Inc.

  20. Effect of target density on the growth and properties of YGBCO thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liu, Linfei; Li, Yiejie; Wu, Xiang; Yao, Yanjie; Wang, Menglin; Wang, Binbin

    2016-12-01

    Some works found that target density had not a large effects on the superconducting or structural properties of YBa2Cu3O7-δ (YBCO) films prepared by pulsed laser deposition. However, the possible effect of target density on the Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) is not clear. In this paper, YGBCO thin films were deposited on flexible metal substrates by pulsed laser deposition using target with different densities. The density of each YGBCO target was varied from to 4.0 g/cm3 to 5.5 g/cm3. The aim of this study was to determine the relationship between the microstructure and superconducting properties of YGBCO films as a function of the target density. The film structures were examined by X-ray diffraction and field emission scanning electron microscopy. The superconducting properties of the YGBCO films were evaluated using the conventional four-probe method and PPMS. It was found that all the YGBCO films had pure c-axis orientation. The target density had effect on the surface morphology and superconducting properties of the YGBCO thin films. With increasing target density, the pore became larger and the distribution density and size of the particles became higher and larger, and the critical current Ic decreased. The YGBCO film deposited at a target density of 4.0 g/cm3 exhibited the highest critical current density Jc of 5.4 MA/cm2 at 77 K and self-field, 47.2 MA/cm2 at 0 T and 8.8 MA/cm2 at 9 T at 4.2 K and B//c.

  1. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    NASA Astrophysics Data System (ADS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  2. On the wetting behavior of ceria thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Fu, Sin-Pui; Rossero, Jorge; Chen, Chen; Li, Daniel; Takoudis, Christos G.; Abiade, Jeremiah T.

    2017-02-01

    Polymers are most widely used in the production of water-repellant coatings. However, their use in applications requiring wear resistance or high-temperature stability is extremely limited. A recent report suggests that wear resistant, thermally stable rare earth oxide materials like cerium dioxide (ceria) are intrinsically water repellant. We have studied this intriguing finding for ceria thin films fabricated by pulsed laser deposition (PLD) at different oxygen pressures and different substrate temperatures. We used a custom apparatus for measuring water contact angles on ceria films deposited by PLD. X-ray photoelectron spectroscopy was used to determine the relationship between the ceria wetting behavior and ceria surface chemistry. Our results show that ceria thin films are intrinsically hydrophilic and that hydrophobicity arises due to adsorption of hydrocarbon species after ˜24 h.

  3. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  4. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  5. Nanoforest Nb2O5 Photoanodes for Dye-Sensitized Solar Cells by Pulsed Laser Deposition

    SciTech Connect

    Ghosh, Rudresh; Brennaman, Kyle M.; Uher, Tim; Ok, Myoung-Ryul; Samulski, Edward T.; McNeil, L. E.; Meyer, Thomas J.; Lopez, Rene

    2011-10-26

    Vertically aligned bundles of Nb₂O₅ nanocrystals were fabricated by pulsed laser deposition (PLD) and tested as a photoanode material in dye-sensitized solar cells (DSSC). They were characterized using scanning and transmission electron microscopies, optical absorption spectroscopy (UV–vis), and incident-photon-to-current efficiency (IPCE) experiments. The background gas composition and the thickness of the films were varied to determine the influence of those parameters in the photoanode behavior. An optimal background pressure of oxygen during deposition was found to produce a photoanode structure that both achieves high dye loading and enhanced photoelectrochemical performance. For optimal structures, IPCE values up to 40% and APCE values around 90% were obtained with the N₃ dye and I₃{sup –}/I{sup –} couple in acetonitrile with open circuit voltage of 0.71 V and 2.41% power conversion efficiency.

  6. Apparatus and method for pulsed laser deposition of materials on wires and pipes

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E. (Inventor)

    2003-01-01

    Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

  7. HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

    2014-03-01

    In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

  8. HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

    2013-05-01

    In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

  9. Pulsed laser deposition and characterization of conductive RuO{sub 2} thin films

    SciTech Connect

    Iembo, A.; Fuso, F.; Arimondo, E.; Ciofi, C.; Pennelli, G.; Curro, G.M.; Neri, F.; Allegrini, M. |

    1997-06-01

    RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Research Society.}

  10. Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Schubert, J.; Schöning, M. J.; Schmidt, C.; Siegert, M.; Mesters, St.; Zander, W.; Kordos, P.; Lüth, H.; Legin, A.; Mourzina, Yu. G.; Seleznev, B.; Vlasov, Yu. G.

    One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

  11. Vaporization and deposition of an intact polyimide precursor by resonant infrared pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Dygert, N. L.; Schriver, K. E.; Haglund, R. F., Jr.

    2006-02-01

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent N-methyl pyrrolidinone (NMP). RIR-PLD transferred material showed two distinct geometries, droplets and string-like moieties. The unaltered nature of the deposited PAA was confirmed by Fourier transform infrared spectroscopy (FTIR). Thermal curing was achieved by heating for one hour on a 250°C hotplate, and the transformation to polyimide was demonstrated from changes in the FTIR spectrum following curing. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, with additional contrast shown between the various resonant frequencies used.

  12. Nanostructured rhodium films produced by pulsed laser deposition for nuclear fusion applications

    NASA Astrophysics Data System (ADS)

    Passoni, M.; Dellasega, D.; Grosso, G.; Conti, C.; Ubaldi, M. C.; Bottani, C. E.

    2010-09-01

    In this paper the possibilities offered by pulsed laser deposition (PLD) for the production of nanostructured rhodium films with improved properties are explored. Thanks to its high reflectivity and low sputtering yield, rhodium is one of the best candidates for the development of thin films to be used in first mirrors, which are crucial components in many diagnostic systems of thermonuclear magnetic fusion machines, like tokamaks. Due to the features of PLD, by varying the process parameters it is possible to tailor both the structure, i.e. the nanocrystalline domain size of the deposited films, down to less than 5 nm and separately control the other relevant physical properties. This leads to modifications in growth regime and annealing dynamics, in such a way that both morphology and reflectivity achieve the properties demanded to use these films as mirrors for fusion applications, opening at the same time new possibilities for the future improvement of thermo-mechanical and adhesion properties.

  13. Characterization of tungsten oxide films produced by reactive pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Soto, G.; Cruz, W. De La; Díaz, J. A.; Machorro, R.; Castillón, F. F.; Farías, M. H.

    2003-09-01

    Tungsten oxide thin films have been prepared by reactive pulsed laser deposition (PLD). Substrate heat treatment and oxygen partial pressure during growth are correlated with Auger electron (AES), X-ray photoelectron (XPS), electron energy loss (EELS) and transmittance spectroscopies. Electronic and mass densities, composition and chemical states are strongly dependent of the deposition conditions. No significant change in the oxygen content in films as a function of substrate or annealing temperature is detected. However, the colored state turns out to be associated to the degree of chemical disorder in the samples, as evidenced by the peak shape of the W 4f transition. Also, the strength of a characteristic energy loss at 6-7 eV appears to be related to the presence of the colored state.

  14. Diffusion barrier performance of pulsed laser deposited amorphous tungsten carbide films

    NASA Astrophysics Data System (ADS)

    Ghaisas, Smita

    1991-12-01

    The performance of pulsed laser deposited tungsten carbide films as diffusion barriers between a <100> Si substrate and an Al overlayer has been investigated. Four-point probe measurement of resistance is employed to monitor the electrical stability of the Al/WC/Si metallization schemes upon thermal annealing in a vacuum for 30 min in a temperature range from 100 to 500 °C. The Glancing angle x-ray diffraction technique has been used to characterize the as-deposited as well as annealed samples. To study the metallurgical interaction between Al overlayer and the barrier film, experiments on isothermal annealings are carried out. The data obtained have been used to estimate the activation energy for the formation of the intermetallic compound WAl12. Morphological features of the annealed samples have been obtained by employing the technique of scanning electron microscopy.

  15. Effects of atomic collisions on the stoichiometry of thin films prepared by pulsed laser deposition.

    PubMed

    Packwood, Daniel M; Shiraki, Susumu; Hitosugi, Taro

    2013-07-19

    We present an analytical model to quantitatively study the effect of collisions between the atoms of a plume and the molecules of a surrounding gas on the nonstoichiometry of lithium-containing oxide thin films deposited using pulsed laser deposition. A comparison of the experimental data and the model ascertain the inevitable loss of the lighter cation, leading to a nonstoichiometric reduction in the content of lighter cations in the films. Our model is the first analytic model of collision-induced plume expansion that can explain the partial oxygen pressure dependence of the Li content of a thin film. These studies have important implications for collision effects that affect the growth of thin films containing both light and heavy elements.

  16. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    PubMed Central

    Duta, Liviu; Stan, George E.; Popa, Adrian C.; Husanu, Marius A.; Moga, Sorin; Socol, Marcela; Zgura, Irina; Miculescu, Florin; Urzica, Iuliana; Popescu, Andrei C.; Mihailescu, Ion N.

    2016-01-01

    We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN) films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility. PMID:28787846

  17. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition.

    PubMed

    Duta, Liviu; Stan, George E; Popa, Adrian C; Husanu, Marius A; Moga, Sorin; Socol, Marcela; Zgura, Irina; Miculescu, Florin; Urzica, Iuliana; Popescu, Andrei C; Mihailescu, Ion N

    2016-01-13

    We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN) films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  18. Structural, Optical and Electrical Properties of Zinc Oxide Layers Produced by Pulsed Laser Deposition Method

    NASA Astrophysics Data System (ADS)

    Wisz, G.; Virt, I.; Sagan, P.; Potera, P.; Yavorskyi, R.

    2017-04-01

    The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured at different process conditions were investigated. ZnO epitaxial layers were grown on silicon, glass, and ITO/glass substrates by pulsed laser deposition (PLD) technique. The influence of power beam, substrate temperature, and deposition time on films properties was analysed. Morphological features of the film surface were investigated by scanning electron microscopy. A structural study shown planar orientation of films at low temperatures of substrate, but the columnar type of growth originated in temperature enhances. Electrical properties were determined in the temperature range 300-500 K. It was shown that the type of films conductivity is metallic and it is limited by charge transfer across grain boundaries.

  19. Er:YGG planar waveguides grown by pulsed laser deposition for LIDAR applications

    NASA Astrophysics Data System (ADS)

    Mackenzie, Jacob I.; Grant-Jacob, James A.; Beecher, Stephen; Riris, Haris; Yu, Anthony W.; Shepherd, David P.; Eason, Robert W.

    2017-02-01

    Er:YGG planar waveguide amplifiers (PWAs) are promising candidates to meet the needs of greenhouse-gas differentialabsorption LIDAR applications. We report pulsed-laser-deposition growth of this doped crystal and net-gain performance (internal gain 2 dB/cm for 0.7-at.% Er-doping) in a 0.9-cm-long uncoated single-pass PWA. Rapid fabrication is also demonstrated with optimized parameters, where crystal growth rates approaching 20 microns/hour have been realized. We compare Er-doping concentrations ranging from 0.5 at.% - 4 at.%, and report on their spectroscopic properties. Furthermore, we show the ability to tailor the deposited crystal properties, controlling the waveguide and gain characteristics. Finally, we discuss the spectroscopy and potential performance of this relatively unstudied material for PWAs in the eye-safe regime.

  20. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    SciTech Connect

    Mamun, Md Abdullah Al; Farha, Ashraf Hassan; Ufuktepe, Yüksel; Elsayed-Ali, Hani E.; Elmustafa, Abdelmageed A.

    2015-03-01

    Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbNx films with larger grain sizes.

  1. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    PubMed

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  2. Influences of laser energy density and annealing on structure properties of AIN films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lü, Lei; Li, Qing-Shan; Li, Li; Zhang, Li-Chun; Wang, Cai-Feng; Qi, Hong-Xia; Zheng, Mengmeng

    2007-07-01

    Aluminum nitride (AlN) films with h<100> crystalline orientation are fabricated on p-Si (100) substrates at room temperature by pulsed laser deposition. The effects of laser energy density and annealing on the quality of the films are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The crystalline quality of AlN films is improved considerably by increasing the laser energy density while there is increased number of farraginous particles on the surface. The annealing treatment at 600°C produces a recrystallization process in the film, characterized by the improvement of the original crystallinity, the appearance of new crystalline orientations, and the increase of the crystallites. The surface becomes rougher due to the increase of the grain size during annealing.

  3. Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

    SciTech Connect

    Gontad, Francisco; Lorusso, Antonella Perrone, Alessio; Klini, Argyro; Fotakis, Costas; Broitman, Esteban

    2016-07-15

    This work reports the fabrication of Nb/Pb structures with an application as photocathode devices. The use of relatively low energy densities for the ablation of Nb with ultrashort pulses favors the reduction of droplets during the growth of the film. However, the use of laser fluences in this ablation regime results in a consequent reduction in the average deposition rate. On the other hand, despite the low deposition rate, the films present a superior adherence to the substrate and an excellent coverage of the irregular substrate surface, avoiding the appearance of voids or discontinuities on the film surface. Moreover, the low energy densities used for the ablation favor the growth of nanocrystalline films with a similar crystalline structure to the bulk material. Therefore, the use of low ablation energy densities with ultrashort pulses for the deposition of the Nb thin films allows the growth of very adherent and nanocrystalline films with adequate properties for the fabrication of Nb/Pb structures to be included in superconducting radiofrequency cavities.

  4. One-pot synthesis and transfer of PMMA/Ag photonic nanocomposites by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Karoutsos, V.; Koutselas, I.; Orfanou, P.; Mpatzaka, Th.; Vasileiadis, M.; Vassilakopoulou, A.; Vainos, N. A.; Perrone, A.

    2015-08-01

    Nanocomposite films comprising metallic nanoparticles in polymer matrices find increasing use in emerging photonic, electronic and microsystem applications owing to their tailored advanced functionalities. The versatile development of such films based on poly-methyl-methacrylate (PMMA) matrix having embedded Ag nanoparticles is addressed here. Two low-cost one-pot chemical methods for the synthesis of bulk target nanocomposite materials are demonstrated. These nanocomposites are subsequently transferred via pulsed laser deposition using 193 nm ArF excimer laser radiation, producing films maintaining the structural and functional properties. Both target- and laser-deposited materials have been thoroughly characterized using microscopic, spectroscopic and thermal analysis methods. Infrared spectra demonstrated the close molecular PMMA chain similarity for both target and film materials, though structural alterations identified by thermal analysis proved the enhanced characteristics of films grown. High-resolution electron microscopy proved the transfer of Ag nanoparticles sized 10-50 nm. Visible absorption peaked in the spectral range of 430-440 nm and attributed to the Ag nanocomposite plasmonic response verifying the transfer of the functional performance from target to film.

  5. Structure and mechanical properties of low stress tetrahedral amorphous carbon films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bonelli, M.; Ferrari, A. C.; Fioravanti, A.; Li Bassi, A.; Miotello, A.; Ossi, P. M.

    2002-02-01

    Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength of 248 nm, ablating highly oriented pyrolytic graphite at room temperature, in a 10-2 Pa vacuum, at fluences ranging between 0.5 and 35 Jcm-2. Both (100) Si wafers and wafers covered with a SiC polycrystalline interlayer were used as substrates. Film structure was investigated by Raman spectroscopy at different excitation wavelength from 633 nm to 229 nm and by transmission Electron Energy Loss Spectroscopy. The films, which are hydrogen-free, as shown by Fourier Transform Infrared Spectroscopy, undergo a transition from mainly disordered graphitic to up to 80% tetrahedral amorphous carbon (ta-C) above a threshold laser fluence of 5 J cm-2. By X-ray reflectivity roughness, density and cross-sectional layering of selected samples were studied. Film hardness as high as 70 GPa was obtained by nanoindentation on films deposited with the SiC interlayer. By scratch test film adhesion and friction coefficients between 0.06 and 0.11 were measured. By profilometry we obtained residual stress values not higher than 2 GPa in as-deposited 80% sp3 ta-C films.

  6. Highly sensitive NO2 sensors by pulsed laser deposition on graphene

    NASA Astrophysics Data System (ADS)

    Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Kasikov, Aarne; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo

    2016-09-01

    Graphene as a single-atomic-layer material is fully exposed to environmental factors and has therefore a great potential for the creation of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized—adsorption centers of different types and with high affinity to target gases have to be created at its surface. In the present work, the modification of graphene by small amounts of laser-ablated materials is introduced for this purpose as a versatile and precise tool. The approach has been demonstrated with two very different materials chosen for pulsed laser deposition (PLD)—a metal (Ag) and a dielectric oxide (ZrO2). It was shown that the gas response and its recovery rate can be significantly enhanced by choosing the PLD target material and deposition conditions. The response to NO2 gas in air was amplified up to 40 times in the case of PLD-modified graphene, in comparison with pristine graphene, and it reached 7%-8% at 40 ppb of NO2 and 20%-30% at 1 ppm of NO2. The PLD process was conducted in a background gas (5 × 10-2 mbar oxygen or nitrogen) and resulted in the atomic areal densities of the deposited materials of about 1015 cm-2. The ultimate level of NO2 detection in air, as extrapolated from the experimental data obtained at room temperature under mild ultraviolet excitation, was below 1 ppb.

  7. Device fabrication of insoluble donor-acceptor-donor structured molecule by pulsed laser deposition: a comparative study using different laser source

    NASA Astrophysics Data System (ADS)

    Swathi, S. K.; Rao, Arun D.; Ranjith, K.; Kumar, Rajneesh; Ramakrishna, S. A.; Ramamurthy, Praveen C.

    2013-06-01

    Many of the conducting polymers though having good material property are not solution processable. Hence an alternate method of fabrication of film by pulsed laser deposition, was explored in this work. PDTCPA, a donor- acceptor- donor type of polymer having absorption from 900 nm to 300 nm was deposited by both UV and IR laser to understand the effect of deposition parameters on the film quality. It was observed that the laser ablation of PDTCPA doesn't alter its chemical structure hence retaining the chemical integrity of the polymer. Microscopic studies of the ablated film shows that the IR laser ablated films were particulate in nature while UV laser ablated films are deposited as smooth continuous layer. The morphology of the film influences its electrical characteristics as current- voltage characteristic of these films shows that films deposited by UV laser are p rectifying while those by IR laser are more of resistor in nature.

  8. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    NASA Astrophysics Data System (ADS)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  9. Investigation of fundamental growth mechanisms in pulsed laser deposition synthesis of nanostructured materials

    NASA Astrophysics Data System (ADS)

    Mozet, William Thomas

    Studies are conducted to better understand growth mechanisms in pulsed laser deposition (PLD) synthesis of nanostructured materials, namely graphene and bismuth telluride (Bi2Te3). For graphene, as the substrate temperature increases, the order of the film increases, from an amorphous carbon film to nanocrystalline graphite and few-layer graphene (FLG). By using a high energy laser, the size and type of ablated species can be controlled to create films with smaller nanocrystalline domains. PLD allows the thickness of the films to be directly controlled by the deposition duration. Films can be grown on arbitrary substrates, unlike other methods which utilize surface chemistry. Substrate morphology also affects the samples, with higher surface roughness leading to larger D/G and 2D/G ratios. Polishing substrates prior to deposition can decrease these ratios by up to 15%. Here, the type of carbon source has little impact on sample growth, except in atmospheric growth of graphene, which may not be an optimal condition because of energy loss of the carbon species. In-situ plasma plume analysis is conducted to analyze the species being ablated from the target. Ablated species consist primarily of C+ ions, with some neutral C and C2 species. Ablated C+ ions are at temperatures as high as 12,000 K in vacuum and 10,000 K in 0.1 torr argon. For bismuth telluride, optimal growth conditions are found for the stoichiometric transfer of Bi2Te3, which can vary from system to system. In general, a deposition temperature of 200°C and a deposition pressure of 0.1 to 1.0 torr argon are required for stoichiometric transfer. Using a high energy laser for ablation leads to smaller grain sizes in the nanostructured films. In addition, using a nitrogen atmosphere instead of argon leads to increased gas-phase condensation prior to deposition, resulting in a highly featured surface. When outside of the ideal pressure range, the substrate material can significantly affect the surface

  10. The formation of GaAs/Si photodiodes by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Ullrich, Bruno; Erlacher, Artur; Jaeger, Herbert

    2004-07-01

    Hetero-pairing of thin-film GaAs on Si is of considerable interest for novel applications in optoelectronics. However, the formation of high-quality GaAs is difficult and requires expensive top technologies such as molecular beam epitaxy (MBE) and related methods. In general, MBE forms high-quality epitaxial layers but is not capable of the straightforward formation of GaAs on Si because of the 4.1% lattice mismatch between both materials. We have developed and explored the possibilities of pulsed-laser deposition (PLD) for the formation of GaAs films on (100) n-type Si substrates. The films have been produced in vacuum (10-6 torr) employing the fundamental (1064 nm), second (532 nm), and third (355 nm) harmonic emission of a Nd:YAG laser with a repetition rate of 10 Hz and a pulse duration of 6 ns. The laser was focused on (100) p-type (1019 cm-3) GaAs wafers with an energy fluence of 0.79-0.84 J/cm2. During the deposition, the substrate was not heated. The current-voltage characteristic of the samples showed rectification, i.e., the doping of the GaAs target was successfully maintained in the PLD film and a diode was formed in conjunction with the oppositely doped Si substrate. The observation of photocurrent without bias is an additional proof that an operating junction was achieved. The crystallographic quality of the films was checked by x-ray analysis and revealed that the films show [111]-oriented crystalline parts. The realization of GaAs/Si photodiodes reveals the potential of PLD to be used for the monolithic integration of GaAs photonic devices with Si circuits.

  11. Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

    SciTech Connect

    Craciun, Valentin; Socol, Gabriel; Craciun, Doina; Cristea, Daniel; Lambers, Eric; Trusca, Roxana; Fairchild, Steven; Back, Tyson; Gruen, Greggory

    2016-09-15

    LaB{sub 6} thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm{sup 3}, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ∼2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at. % once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩ cm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H ∼ 16 GPa, E ∼ 165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB{sub 6}.

  12. Pulsed excimer laser processing

    NASA Astrophysics Data System (ADS)

    Wong, D.

    1985-06-01

    The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

  13. Pulsed excimer laser processing

    NASA Technical Reports Server (NTRS)

    Wong, D.

    1985-01-01

    The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

  14. Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

    PubMed Central

    Shah, Kamran; Haq, Izhar Ul; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process. PMID:24592190

  15. Experimental study of direct laser deposition of Ti-6Al-4V and Inconel 718 by using pulsed parameters.

    PubMed

    Shah, Kamran; Izhar Ul Haq; Shah, Shaukat Ali; Khan, Farid Ullah; Khan, Muhammad Tahir; Khan, Sikander

    2014-01-01

    Laser direct metal deposition (LDMD) has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM) and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

  16. Growth of monocrystalline Cu(1 1 1) films on MgO(1 1 1) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Aweke, F.; Antoni, F.; Hulik, J.; Morvan, G.; Speisser, C.; Veis, P.; Le Normand, F.

    2015-05-01

    Copper (Cu) films with a minimal thickness of 300 nm were grown on MgO(1 1 1) substrates in high vacuum by pulsed laser deposition (PLD) at various temperatures to achieve a single crystal Cu film with flat terraces without grain boundaries. We investigated the effect of the substrate temperature, the pulse repetition rate, the deposition time and the laser fluence. A temperature threshold is observed above which the growth mode is changed from a uniform flat mode to a three dimensional mode. A combined process involving a germination step at moderate temperature followed by a growth step at higher temperature yields a 450 nm almost continuous film.

  17. Bioactive, nanostructured Si-substituted hydroxyapatite coatings on titanium prepared by pulsed laser deposition.

    PubMed

    Rau, Julietta V; Cacciotti, Ilaria; Laureti, Sara; Fosca, Marco; Varvaro, Gaspare; Latini, Alessandro

    2015-11-01

    The aim of this work was to deposit silicon-substituted hydroxyapatite (Si-HAp) coatings on titanium for biomedical applications, since it is known that Si-HAp is able to promote osteoblastic cells activity, resulting in the enhanced bone ingrowth. Pulsed laser deposition (PLD) method was used for coatings preparation. For depositions, Si-HAp targets (1.4 wt % of Si), made up from nanopowders synthesized by wet method, were used. Microstructural and mechanical properties of the produced coatings, as a function of substrate temperature, were investigated by scanning electron and atomic force microscopies, X-ray diffraction, Fourier transform infrared spectroscopy, and Vickers microhardness. In the temperature range of 400-600°C, 1.4-1.5 µm thick Si-HAp films, presenting composition similar to that of the used target, were deposited. The prepared coatings were dense, crystalline, and nanostructured, characterized by nanotopography of surface and enhanced hardness. Whereas the substrate temperature of 750°C was too high and led to the HAp decomposition. Moreover, the bioactivity of coatings was evaluated by in vitro tests in an osteoblastic/osteoclastic culture medium (α-Modified Eagle's Medium). The prepared bioactive Si-HAp coatings could be considered for applications in orthopedics and dentistry to improve the osteointegration of bone implants. © 2014 Wiley Periodicals, Inc.

  18. Utilizing pulsed laser deposition lateral inhomogeneity as a tool in combinatorial material science.

    PubMed

    Keller, David A; Ginsburg, Adam; Barad, Hannah-Noa; Shimanovich, Klimentiy; Bouhadana, Yaniv; Rosh-Hodesh, Eli; Takeuchi, Ichiro; Aviv, Hagit; Tischler, Yaakov R; Anderson, Assaf Y; Zaban, Arie

    2015-04-13

    Pulsed laser deposition (PLD) is widely used in combinatorial material science, as it enables rapid fabrication of different composite materials. Nevertheless, this method was usually limited to small substrates, since PLD deposition on large substrate areas results in severe lateral inhomogeneity. A few technical solutions for this problem have been suggested, including the use of different designs of masks, which were meant to prevent inhomogeneity in the thickness, density, and oxidation state of a layer, while only the composition is allowed to be changed. In this study, a possible way to take advantage of the large scale deposition inhomogeneity is demonstrated, choosing an iron oxide PLD-deposited library with continuous compositional spread (CCS) as a model system. An Fe₂O₃-Nb₂O₅ library was fabricated using PLD, without any mask between the targets and the substrate. The library was measured using high-throughput scanners for electrical, structural, and optical properties. A decrease in electrical resistivity that is several orders of magnitude lower than pure α-Fe₂O₃ was achieved at ∼20% Nb-O (measured at 47 and 267 °C) but only at points that are distanced from the center of the PLD plasma plume. Using hierarchical clustering analysis, we show that the PLD inhomogeneity can be used as an additional degree of freedom, helping, in this case, to achieve iron oxide with much lower resistivity.

  19. Unique aspects of laser energy deposition in the fs pulse regime

    SciTech Connect

    Feit, M.D.; Rubenchik, A.M.; Shore, B.W.

    1996-02-02

    Ultrashort laser pulse tissue ablation has demonstrated advantages of greatly reduced required energy and collateral damage. These advantages stem directly from the fact that laser energy is absorbed nonlinearly in a time too hsort for significant thermal dn hydrodynamic response. The high peak power and short pulse duration both have implications for practical fiber delivery systems.

  20. Visible light-harvesting of TiO2 nanotubes array by pulsed laser deposited CdS

    NASA Astrophysics Data System (ADS)

    Bjelajac, Andjelika; Djokic, Veljko; Petrovic, Rada; Socol, Gabiel; Mihailescu, Ion N.; Florea, Ileana; Ersen, Ovidiu; Janackovic, Djordje

    2014-08-01

    Titanium dioxide (TiO2) nanotubes arrays, obtained by anodization technique and annealing, were decorated with CdS using pulsed laser deposition method. Their structural, morphological and chemical characterization was carried out by electron microscopy in scanning (SEM) and transmission (TEM) modes, combined with energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS). It was demonstrated that the quantity of deposited CdS can be controlled by varying the number of laser pulses. The chemical mapping of the elements of interest was performed using the energy filtered mode of the electron microscope. The results showed that pulse laser deposition is an adequate technique for deposition of CdS inside and between 100 nm wide TiO2 nanotubes. The diffuse reflectance spectroscopy investigation of selected samples proved that the absorption edge of the prepared CdS/TiO2 nanocomposites is significantly extended to the visible range. The corresponding band gaps were determinated from the Tauc plot of transformed Kubelka-Munk function. The band gap reduction of TiO2 nanotubes by pulsed laser deposition of CdS was put in evidence.

  1. Properties of ion-assisted pulsed laser deposited H-BN/C-BN layer systems

    NASA Astrophysics Data System (ADS)

    Weissmantel, Steffen; Reisse, Guenter

    2000-02-01

    Boron nitride films were prepared by pulsed laser ablation from a boron nitride target using a KrF-excimer laser, where the growing films were deposited in nitrogen atmosphere or bombarded by a nitrogen/argon ion beam. Films deposited at ion-to-arriving-target-atom ( I/ A) ratios at the substrate below 0.5 (l-BN) are hexagonal. Nucleation of the cubic phase (c-BN) takes place exclusively with ion bombardment at I/ A ratios above 1.0, which may be reduced down to 0.6 after the completion of the nucleation process. The adhesion of c-BN films is improved significantly using l-BN films as intermediate layers. Up to 400-nm thick c-BN films have been investigated by cross-section transmission electron microscopy (TEM). The l-BN layers show a strong preferred orientation with the c-axis parallel to the substrate surface. The crystallites of the nearly phase pure c-BN layers show strong <110> preferred orientation. The Vickers microhardness of l-BN films is in the range of 25-5 GPa and the compressive stresses in the range of 2-16 GPa. The compressive stresses of 400-nm thick c-BN films were in the range of 4-6 GPa.

  2. Laser assisted deposition

    NASA Technical Reports Server (NTRS)

    Dutta, S.

    1983-01-01

    Applications of laser-based processing techniques to solar cell metallization are discussed. Laser-assisted thermal or photolytic maskless deposition from organometallic vapors or solutions may provide a viable alternative to photovoltaic metallization systems currently in use. High power, defocused excimer lasers may be used in conjunction with masks as an alternative to direct laser writing to provide higher throughput. Repeated pulsing with excimer lasers may eliminate the need for secondary plating techniques for metal film buildup. A comparison between the thermal and photochemical deposition processes is made.

  3. Pulsed-laser deposition of nanostructured iron oxide catalysts for efficient water oxidation.

    PubMed

    Orlandi, Michele; Caramori, Stefano; Ronconi, Federico; Bignozzi, Carlo A; El Koura, Zakaria; Bazzanella, Nicola; Meda, Laura; Miotello, Antonio

    2014-05-14

    Amorphous iron oxide nanoparticles were synthesized by pulsed-laser deposition (PLD) for functionalization of indium-tin oxide surfaces, resulting in electrodes capable of efficient catalysis in water oxidation. These electrodes, based on earth-abundant and nonhazardous iron metal, are able to sustain high current densities (up to 20 mA/cm2) at reasonably low applied potential (1.64 V at pH 11.8 vs reversible hydrogen electrode) for more than 1 h when employed as anodes for electrochemical water oxidation. The good catalytic performance proves the validity of PLD as a method to prepare nanostructured solid-state materials for catalysis, enabling control over critical properties such as surface coverage and morphology.

  4. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  5. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  6. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    NASA Astrophysics Data System (ADS)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  7. Preparation and characterization of LaMnO3 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Aruta, C.; Angeloni, M.; Balestrino, G.; Boggio, N. G.; Medaglia, P. G.; Tebano, A.; Davidson, B.; Baldini, M.; Di Castro, D.; Postorino, P.; Dore, P.; Sidorenko, A.; Allodi, G.; De Renzi, R.

    2006-07-01

    We have grown LaMnO3 thin films on (001) LaAlO3 substrates by pulsed laser deposition. X-ray diffraction confirms that the films are only slightly relaxed and are oriented "square on square" relative to the substrate. The measured Raman spectra closely resemble that observed in bulk LaMnO3, which indicates no relevant distortions of the MnO6 octahedra induced by the epitaxial strain. Therefore, no detectable changes in the lattice dynamics occurred in our LaMnO3 strained films relative to the bulk case. Mn55 nuclear magnetic resonance identifies the presence of localized Mn4+ states. Superconducting quantum interference device magnetization measures TN=131(3)K and a saturation moment μ =1.09μB/Mn, revealing a small concentration of Mn4+ and placing our films within the antiferromagnetic insulating phase.

  8. How to obtain a magnetic hard-soft architecture by pulsed laser deposition.

    PubMed

    Fix, T; Trassin, M; Hassan, R Sayed; Schmerber, G; Viart, N; Mény, C; Colis, S; Dinia, A

    2007-12-12

    In spin valve type systems, one ferromagnetic electrode must be magnetically hard to act as a reference layer while the other electrode must be magnetically soft to act as a sensor or storage layer. This magnetic hard-soft architecture can usually be obtained by four different methods: the use of two ferromagnets with different coercive fields (here CoFe(2) and Ni(80)Fe(20)), the use of an underlayer enhancing the coercive field of one of the two ferromagnets (here Ta and Ru), the use of a ferromagnet coupled to a ferrimagnet or antiferromagnet (here NiO/CoFe(2) and CoFe(2)O(4)/CoFe(2)), or the use of an artificial antiferromagnet (here CoFe(2)/Ru/CoFe(2)). We show that at least the first and the third methods seem to work with pulsed laser deposition in the thermodynamic conditions used.

  9. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    SciTech Connect

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro; Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  10. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  11. Substrate temperature and oxygen pressure dependence of pulsed laser-deposited Sr ferrite films

    NASA Astrophysics Data System (ADS)

    Papakonstantinou, P.; O'Neill, M.; Atkinson, R.; Salter, I. W.; Gerber, R.

    1996-01-01

    The effect of substrate temperature and oxygen pressure on the microstructure, magnetic and magneto-optical properties of Sr ferrite (SrM) films grown on (001) single-crystal sapphire substrates by pulsed laser deposition has been investigated. Polycrystalline SrM films with perpendicular magnetic anisotropy could be prepared under a wide range of oxygen pressures and relatively high temperatures, sufficient to crystallise the material. However, an almost exclusive c-axis orientation normal to the film plane could be attained only at a narrow operational window centered at 0.1 mbar and 840°C. The magneto-optical properties of the films were comparable to those of the bulk barium hexaferrite single-crystal material. In addition, results obtained by atomic force microscopy provide convincing evidence that the growth of Sr ferrite on sapphire takes place by a spiral growth mechanism.

  12. Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Schwoediauer, Reinhard; Bauer-Gogonea, Simona; Bauer, Stefan; Heitz, J.; Arenholz, Enno; Baeuerle, Dieter

    1999-12-01

    Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

  13. Fabrication of Nanocomposite Thermoelectric Materials by a Pulsed Laser Deposition Method

    NASA Astrophysics Data System (ADS)

    Matsubara, Masato; Azuma, Hirozumi; Asahi, Ryoji

    2011-05-01

    We applied a pulsed laser deposition (PLD) technique to fabricate nanocomposite half-Heusler thermoelectrics by employing two different methods: a dry process and a wet process. First, we tried to obtain nanosized thermoelectric particles by using PLD in a liquid solvent. Nanosized (<100 nm) spherical and crystalline half-Heusler particles containing Ti, Zr, Hf, Ni, and Sn elements were obtained by this method, showing good controllability of stoichiometry. The key is to select a solvent that prevents oxidation. Second, the dry PLD process was employed to coat the thermoelectric powder with metal oxides. To this end, we developed a PLD coating apparatus. After sintering the coated powder using the spark plasma sintering (SPS) technique, we confirmed that a nanosized layer of the metal oxides was uniformly formed at the grain boundaries of the half-Heusler matrix. With these two examples, the capability of the PLD techniques to fabricate well-controlled nanocomposite thermoelectric materials is demonstrated.

  14. Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Mannam, Ramanjaneyulu; Kumar, E. Senthil; Priyadarshini, D. M.; Bellarmine, F.; DasGupta, Nandita; Ramachandra Rao, M. S.

    2017-10-01

    We report on the growth of ZnO nanostructures in different gas ambient (Ar and N2) using pulsed laser deposition technique. Despite the similar growth temperature, use of N2 ambient gas resulted in well-aligned nanorods with flat surface at the tip, whereas, nanorods grown with Ar ambient exhibited tapered tips. The Nanorods grown under N2 ambient exhibited additional Raman modes corresponding to N induced zinc interstitials. The nanorods are c-axis oriented and highly epitaxial in nature. Photoluminescence spectroscopy reveals that the UV emission can be significantly enhanced by 10 times for the nanorods grown under Ar ambient. The enhanced UV emission is attributed to the reduction in polarization electric field along the c-axis. n-ZnO nanorods/p-Si heterojunction showed rectifying I-V characteristics with a turn of voltage of 3.4 V.

  15. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

    SciTech Connect

    Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

    2015-09-01

    We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

  16. Carbon Ion Irradiation Effects on Pulsed Laser Deposited Titanium Nitride Thin Films

    NASA Astrophysics Data System (ADS)

    Mahmood, Khaliq; Bashir, Shazia; Akram, Mahreen; Hayat, Asma; Faizan-Ul-Haq; Saadat, Shahzad

    2015-02-01

    Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

  17. Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Serrao, Claudy R.; You, Long; Gadgil, Sushant; Hu, Chenming; Salahuddin, Sayeef; Diamond, Anthony M.; Hsu, Shang-Lin; Clarkson, James; Carraro, Carlo; Maboudian, Roya

    2015-02-02

    Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

  18. p-Type zinc oxide films grown by infrared-light-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hiraide, Toshihiro; Kurumi, Satoshi; Suzuki, Kaoru

    2013-03-01

    In this paper, ZnO films were grown on sapphire (0001) substrates by infrared-light-assisted pulsed-laser deposition (IRA-PLD). In addition, a nitrogen-plasma-assisted (PA-N) system was utilized for effectively doping the acceptor by radio frequency induction coupled plasma (RF-ICP). The effect of IRA-PLD and PA-N systems was investigated by studying the difference in substrate temperature with and without plasma assistance. We found that ZnO films exhibit no exciton emission with PA-N at a high temperature and that an increase in the substrate temperature yields ZnO films with a (002) and c-axis preferred orientation in a nitrogen (N2) gas atmosphere. ZnO films are changed from n-type to p-type at a substrate temperature of 673 K by IRA-PLD with an N2 background atmosphere.

  19. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Yangang; Yao, Yangyi; Zhang, Xiaohang; Hsu, Wei-Lun; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Dagenais, Mario; Takeuchi, Ichiro

    2016-01-01

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  20. Pulsed Nd-YAG laser deposition of TiN and TiAlN coating

    NASA Astrophysics Data System (ADS)

    Kathuria, Y. P.; Uchida, Yoshiyuki

    This paper demonstrates the feasibility of generating a thin clad coating of TiN and TiAlN on SS304 base material by using the pulsed Nd-YAG laser. In the experiment TiN based coating was created with and without the addition of Al-powder. In the post processing, a precision grinder was employed to smoothen the top surface. SEM, XRD and EDS analysis were employed to study the surface topography etc. Microhardness mapping was performed at various points across the surface. The results show the average microhardness of the coating deposited with TiN is lower (1035 HV) than that of using Al-mixed powder (1264 HV).

  1. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  2. Sensor activity in pulsed laser deposited and ion implanted tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Lal, Ram; Grover, Rajni; Vispute, R. D.; Viswanathan, R.; Godbole, V. P.; Ogale, S. B.

    In this report we report the effect of microstructural variations on sensing activity of SnO2 thin films. The tin oxide thin films are deposited by using the technique of pulsed laser ablation. The process parameters, i.e. oxygen partial pressure, are varied to obtain films with different stoichiometries and microstructures. Some of these films are bombarded with medium energy (140 keV) argon ions at various dose levels. Structural and compositional variations in the films have been studied by using low angle X-ray diffraction, Moessbauer spectroscopy and in-situ resistivity measurements while optical response has been monitored by using UV-visible spectroscopy. The films synthesized and processed under different conditions have been subjected to examination of gas and humidity sensing behavior.

  3. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    SciTech Connect

    Yang, Qi I.; Zhao, Jinfeng; Risbud, Subhash H.; Zhang, Li; Dolev, Merav; Fried, Alexander D.; Marshall, Ann F.; Kapitulnik, Aharon

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  4. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    SciTech Connect

    Roy Moulik, Samik; Samanta, Sudeshna; Ghosh, Barnali

    2014-06-09

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ∼27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC ∼ 50% at room temperature at lowest wavelength (λ = 360 nm) at a nominal bias voltage of 0.1 V.

  5. Pulsed Laser Deposition of Cr2-x Fe x TeO 6 Thin Film

    NASA Astrophysics Data System (ADS)

    Wang, Junlei; Belashchenko, Kirill D.; Dowben, Peter A.; Binek, Christian

    2011-03-01

    Promising spintronic concepts such as Cr 2 O3 based voltage-controlled exchange bias system employ electric controlled boundary magnetization. Symmetry arguments reveal that equilibrium boundary magnetization is a generic property of magnetoelectric antiferromagnets. However, experimental evidence of the boundary magnetization is scarce. Here we explore non-traditional growth of magnetoelectric oxides with tri-rutile structure using pulsed laser deposition (PLD) methodology. We grow and characterize structurally and magnetically various magnetoelectric thin films of the Cr 2-x Fe x Te O6 family starting from x=2 in order to take advantage of the reduced chemical complexity of Fe 2 Te O6 and the beneficial high temperature onset of antiferromagnetic order at 230K in comparison to 90K of Cr 2 Te O6 . Our investigation aims on an experimental test of the predicted generality of the equilibrium boundary magnetization in magnetoelectric antiferromagnets. This project is supported by MRSEC Supplement.

  6. Hydroxyapatite thin films synthesized by Pulsed Laser Deposition onto titanium mesh implants for cranioplasty applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Stan, G. E.; Popescu, A. C.; Socol, G.; Miroiu, F. M.; Mihailescu, I. N.; Ianculescu, A.; Poeata, I.; Chiriac, A.

    2013-06-01

    We report on the synthesis of advanced nanostructured hydroxyapatite thin films onto 3D titanium (Ti) mesh substrates by Pulsed Laser Deposition method. Morphological and structural investigations as well as pull-out tests proved the stoichiometric transfer of crystalline hydroxyapatite (HA) films along with their good adherence. In vivo tests were performed on 12 patients (six with simple Ti mesh, six with Ti mesh biofunctionalized with HA). The tomodensitometry analysis of the cranial control scans evidenced the process of osseogenesis. For four patients with implanted HA/Ti mesh structures, the modification of the value obtained on Hounsfield scale was observed at the level of implant, proving the progress of osseointegration. We conclude that the structures exhibit excellent bonding strength and functionality, and are suitable for neurosurgical applications.

  7. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    SciTech Connect

    Mistry, Bhaumik V. Joshi, U. S.

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  8. Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orsel, Kasper; Groenen, Rik; Bastiaens, Bert; Koster, Gertjan; Rijnders, Guus; Boller, Klaus-J.

    2016-12-01

    We record the two-dimensional laser-induced fluorescence (LIF) on multiple plasma constituents in a YBiO3 plasma. This allows us to directly link the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO3 films. With spatiotemporal LIF mapping of the plasma species (Y, YO, Bi, and BiO) in different background gas compositions, we find that little direct chemical interaction takes place between the plasma plume constituents and the background gas. However, a strong influence of the background gas composition can be seen on the YBO film growth, as well as a strong correlation between the oxygen fraction in the background gas and the amount of YO in the plasma plume. We assign this correlation to a direct interaction between the background gas and the target in between ablation pulses. In an O2 background, an oxygen-rich surface layer forms in between ablation pulses, which provides additional oxygen for the plasma plume during target ablation. This differs from our previous observations in STO and LAO plasmas, where species oxidation primarily takes place during propagation of the plasma plume towards the substrate.

  9. Preparation of calcium-doped boron nitride by pulsed laser deposition

    SciTech Connect

    Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

    2012-08-15

    Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca{sub x}BN{sub y} (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al{sub 2}O{sub 3}(0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca{sub 3}N{sub 2} disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

  10. Formation and properties of novel artificially-layered cuprate superconductors using pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Chakoumakos, B.C.; Budai, J.D.

    1996-03-01

    Pulsed-laser deposition and epitaxial stabilization have been effectively used to engineer artificially-layered thin-film materials. Novel cuprate compounds have been synthesized using the constraint of epitaxy to stabilize (Ca,Sr)CuO{sub 2}/(Ba,Ca,Sr)CuO{sub 2} superconducting superlattices in the infinite layer structure. Superlattice chemical modulation can be observed from the x-ray diffraction patterns for structures with SrCuO{sub 2} and (Ca, Sr)CuO{sub 2} layers as thin as a single unit cell ({approximately}3. 4 {angstrom}). X-ray diffraction intensity oscillations, due to the finite thickness of the film, indicate that (Ca,Sr)CuO{sub 2} films grown by pulsed-laser deposition are extremely flat with a thickness variation of only {approximately}20 {angstrom} over a length scale of several thousand angstroms. This enables the unit-cell control of (Ca, Sr)CuO{sub 2} film growth in an oxygen pressure regime in which in situ surface analysis using electron diffraction is not possible. With the incorporation of BaCuO{sub 2} layers, superlattice structures have been synthesized which superconduct at temperatures as high as 70 K. Dc transport measurements indicate that (Ca, Sr)CuO{sub 2}/BaCuO{sub 2} superlattices are two dimensional superconductors with the superconducting transition primarily associated with the BaCuO{sub 2} layers. Superconductivity is observed only for structures with BaCuO{sub 2} layers at least two unit cells thick with {Tc} decreasing as the (Ca,Sr)CuO{sub 2} layer thickness increases. Normalized resistance in the superconducting region collapse to the Ginzburg-Landau Coulomb gas universal resistance curve consistent with the two-dimensional vortex fluctuation model.

  11. Pulsed laser deposition of europium-doped multilayer thin films for spectral storage applications

    NASA Astrophysics Data System (ADS)

    Bezares, Francisco J.

    This thesis studies different Eu optical centers in MgS:Eu and CaS:Eu thin films produced by Chemically Controlled Pulse Laser Deposition (CCPLD) and evaluates their suitability for the development of spectral storage devices of the future. The produced thin films consist of one or more optically active layer(s), MgS:Eu, CaS:Eu or a similar material, and a corresponding ZnS capping layer that functions as a protecting barrier for the other layers and preserves their composition and integrity. Given that the synthesis of the materials used to produce the multilayer structures in this work proved a great challenge, careful attention was given to the optimization of all fabrication parameters. Mass Spectrometry was used during the deposition of the thin films and the data obtained resulted on improvements and optimization of the deposition process. Scanning electron microscopy studies of these thin films were conducted to study degradation upon long-term storage. Microscopy results show that the morphology of the produced thin films is correlated to the growth environment during deposition and deterioration of the deposited materials could be initiated by nano-gaps and cracks in the capping layer of the thin films. In addition to optical centers in MgS:Eu and CaS:Eu, new centers were created by changing the thin film growth environment inside a hi-vacuum chamber, modifying the composition of the ablation target material, or both. For example, introducing O2--, or alternatively HCl, inside the CCPLD chamber while producing MgS:Eu thin films results in the formation of impurity associated centers across lattice sites throughout the deposited structures. In another method of impurity doping studied, Cl-- and Na+ were introduced into the MgS:Eu and CaS:Eu lattices by mixing trace amounts of the impurity ions into these materials in polycrystalline form and making this mixture a deposition target by hi-pressure cold compression technique. The introduction of these impurity

  12. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-05-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  13. Nano-cube MgO formed on silicon substrate using pulsed laser deposition.

    PubMed

    Kaneko, Satoru; Ito, Takeshi; Akiyama, Kensuke; Yasui, Manabu; Hirabayashi, Yasuo; Soga, Masayasu; Miyake, Yumiko; Yoshimoto, Mamoru

    2012-03-01

    Nano-cube MgO particles were formed on Si substrates by deposition of an MgO target using pulsed laser deposition method. An epitaxial film grows on Si(001) substrate with its contraction of lattice constants. In this study, expecting high quality MgO film, the MgO film prepared in the oxygen pressure ranging from 75-400 mTorr at the high temperature of -750 degrees C. The deposited MgO showed the growth of (001) preferred orientation on the Si(001) substrate. However, X-ray Photoelectron Spectroscopy (XPS) indicated the MgO film did not form a continuous film on the Si surface. Interestingly, the surface morphology observed by an Atomic Force Microscopy (AFM) showed nano-cube MgO particles scattered on the smooth surface of Si substrate. After annealing the nano-cube MgO, the shape of MgO particles were changed from nano-cube to round shaped particles. The AFM image of the surface showed round shaped MgO nanoparticles scattered on rough surface. X-ray Diffraction (XRD) revealed the epitaxial growth of MgO(001) with cubic on cubic arrangement on the Si(001) substrate (MgO[100] parallel to Si[100]).

  14. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

    PubMed

    Bouška, M; Pechev, S; Simon, Q; Boidin, R; Nazabal, V; Gutwirth, J; Baudet, E; Němec, P

    2016-05-20

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  15. Antibacterial copper-nickel bilayers and multilayer coatings by pulsed laser deposition on titanium.

    PubMed

    Vishwakarma, Vinita; Josephine, J; George, R P; Krishnan, R; Dash, S; Kamruddin, M; Kalavathi, S; Manoharan, N; Tyagi, A K; Dayal, R K

    2009-11-01

    Biofouling, especially microfouling, is a major concern with the use of titanium (Ti) in the marine environment as a condenser material in cooling water systems. Earlier, copper-nickel (Cu/Ni) alloys were extensively used in marine environments due to their high corrosion and biofouling resistance. However, the choice of condenser material for the new fast breeder reactor in Kalpakkam is Ti to avoid steam side corrosion problems, which may pose a threat to steam generator parts having sodium as the secondary coolant. This study evaluates the surface modification of Ti using nano films of copper (Cu) and nickel (Ni) to utilize the antibacterial property of copper ions in reducing microfouling. The surface modification of Ti was carried out by the deposition of a Cu/Ni bilayer and (Cu/Ni)(10) multilayer films using a pulsed laser deposition technique. Various surface characterization studies revealed that the deposited Cu/Ni films were thin and nanocrystalline in nature. The antibacterial properties were evaluated using total viable count and epifluorescence microscopic techniques. The results showed an apparent decrease in bacterial attachment on multilayered and bilayered Cu/Ni thin films on Ti surfaces. Comparative studies between the two types of films showed a bigger reduction in numbers of microorganisms on the multilayers.

  16. Pulsed laser deposition of corrosion protective Yttrium Oxide (Y 2O 3) coating

    NASA Astrophysics Data System (ADS)

    Singh, A. K.; Kutty, T. R. G.; Sinha, Sucharita

    2012-01-01

    Among ceramics and oxides, Yttria (Y 2O 3) films have been widely investigated as potential corrosion protective coatings largely on account of their wear resistant and non-wettable properties. Results presented here describe successful use of pulsed laser deposition (PLD) technique for deposition of thin film Yttria coating on stainless steel substrates. Deposited Yttria coatings have been characterized in terms of their microstructure, crystalline phase and hardness using Scanning Electron Microscope (SEM), X-ray diffraction (XRD) and scratch test techniques, respectively. Characterization tests of these coatings of thickness up to 50 μm have shown strong bonding with substrate surface and a high degree of homogeneity and compaction. Resistance of these PLD based Yttria coatings to molten uranium have also been studied via Differential Thermal Analysis (DTA). Our results on DTA tests evaluating compatibility of the Yttria coatings with molten uranium have established the excellent corrosion resistance property of such Y 2O 3 coatings when exposed to molten uranium.

  17. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    PubMed

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  18. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  19. Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

    SciTech Connect

    Uddin, Md Ahsan E-mail: gkoley@clemson.edu; Koley, Goutam E-mail: gkoley@clemson.edu; Glavin, Nicholas; Singh, Amol; Naguy, Rachel; Jespersen, Michael; Voevodin, Andrey

    2015-11-16

    Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO{sub 2} was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO{sub 2} has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO{sub 2} substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO{sub 2} (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm{sup 2}/V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 10{sup 11 }cm{sup −2} was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping.

  20. Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

    PubMed Central

    Gondoni, Paolo; Ghidelli, Matteo; Di Fonzo, Fabio; Li Bassi, Andrea; Casari, Carlo S.

    2013-01-01

    Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (>80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4. PMID:23486076

  1. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  2. n-type In2S3 films deposited by pulsed laser deposition: effect of laser power on the properties of the films

    NASA Astrophysics Data System (ADS)

    Wu, Chunyan; Mao, Dun; Liu, Zhu; Liang, Qi; Chen, Shirong; Yu, Yongqiang; Wang, Li; Luo, Linbao; Xu, Jun

    2015-05-01

    Pulsed laser deposition (PLD) with different levels of laser power was first used to deposit In2S3 films from homemade, high-purity In2S3 targets. This process was followed by post-annealing in an N2 atmosphere to improve the films’ crystallinity and conductivity. The annealed films were verified to be stoichiometric, body-centered, tetragonal In2S3 with the preferred orientation (103). The bandgap of the films decreased from 2.8 to 2.2 eV with an increase in the laser power, which was believed to be the result of the grain growth caused by the higher laser power. The electrical transport property of the bottom-gate field-effect transistor revealed the n-type conduction of the annealed In2S3 films, and the heterojunction p+-Si/annealed In2S3 film showed remarkable photovoltaic behavior upon light illumination, indicating that PLD-deposited In2S3 films may have great potential as a buffer layer in thin-film solar cells. What’s more, doped In2S3 films can be easily realized due to the fairly stoichiometric transfer of the PLD method.

  3. Excitation-induced germanium quantum dot growth on silicon(100)-2X1 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Er, Ali Oguz

    2011-12-01

    Self-assembled Ge quantum dots (QD) are grown on Si(100)-(2x1) with laser excitation during growth processes by pulsed laser deposition (PLD). In situ reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth dynamics and morphology of the QDs. A Q-switched Nd:YAG laser (lambda = 1064 nm, 40 ns pulse width, 5 J/cm2 fluence, and 10 Hz repetition rate) were used to ablate germanium and irradiate the silicon substrate. Ge QD formation on Si(100)-(2x1) with different substrate temperatures and excitation laser energy densities was studied. The excitation laser reduces the epitaxial growth temperature to 250 °C for a 22 ML film. In addition, applying the excitation laser to the substrate during the growth changes the QD morphology and density and improves the uniformity of quantum dots fabricated at 390 °C. At room temperature, applying the excitation laser during growth decreases the surface roughness although epitaxial growth could not be achieved. We have also studied the surface diffusion coefficient of Ge during pulsed laser deposition of Ge on Si(100)-(2x1) with different excitation laser energy densities. Applying the excitation laser to the substrate during the growth increases the surface diffusion coefficient, changes the QD morphology and density, and improves the size uniformity of the grown quantum dots. To study the effect of high intensity ultralast laser pulses, Ge quantum dots on Si(I00) were grown in an ultrahigh vacuum (UHV) chamber (base pressure ˜7.0x10 -10 Torr) by femtosecond pulsed laser deposition. The results show that excitation laser reduces the epitaxial growth temperature to ˜70 °C. This result could lead to nonthermal method to achieve low temperature epitaxy which limits the redistribution of impurities, reduces intermixing in heteroepitaxy, and restricts the generation of defects by thermal stress. We have ruled out thermal effects and some of the desorption

  4. Pulsed laser deposited cobalt-doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Wang, Li; Su, Xue-qiong; Lu, Yi; Chen, Jiang-bo

    2013-09-01

    To realize the room-temperature ferromagnetism (RTFM) in diluted magnetic semiconductors (DMS), we prepared a series of Cobalt-doped ZnO thin films using pulsed laser deposition (PLD) at deposition temperatures 500°C under oxygen pressure from 2.5×10-4 Pa to 15 Pa. To elucidate the physical origin of RTFM, Co 2p spectra of cobalt-doped ZnO thin films was measured by X-ray photoelectron spectroscopy (XPS). The magnetic properties of films were measured by an alternating gradient magnetometer (AGM), and the electrical properties were detected by a Hall Effect instrument using the Van der Pauw method. XPS analysis shows that the Co2+ exists and Co clusters and elemental content change greatly in samples under various deposition oxygen pressures. Not only the valence state and elemental content but also the electrical and magnetic properties were changed. In the case of oxygen pressure 10 Pa, an improvement of saturation magnetic moment about one order of magnitude over other oxygen pressure experiments, and the film exhibits ferromagnetism with a curie temperature above room temperature. It was found that the value of carrier concentration in the Co-doped ZnO film under oxygen pressure 10Pa increases about one order of magnitude than the values of other samples under different oxygen pressure. Combining XPS with AGM measurements, we found that the ferromagnetic signals in cobalt-doped ZnO thin film deposited at 500 °C under oxygen pressure 10 Pa only appear with the detectable Co2+ spectra from incompletely oxidized Co metal or Co cluster. So oxygen pressure 10 Pa can be thought the best condition to obtain room-temperature dilute magnetic semiconductor about cobalt-doped ZnO thin films.

  5. Growth of γ-alumina thin films by pulsed laser deposition and plasma diagnostic

    NASA Astrophysics Data System (ADS)

    Yahiaoui, K.; Abdelli-Messaci, S.; Messaoud Aberkane, S.; Siad, M.; Kellou, A.

    2017-07-01

    The present work discusses about the synthesis of alumina thin films, which have applications in current and next-generation solid-state electronic devices due to their attractive properties. Alumina thin films were synthesized by pulsed laser deposition at different oxygen pressures and substrate temperatures. The dependence of substrate temperature, oxygen pressure, and the deposition time on the properties of the films has been observed by growing three series of alumina thin films on Si (100). The first films are synthesized using substrate temperatures ranging from room temperature to 780 °C at 0.01 mbar of O2. The second series was realized at a fixed substrate temperature of 760 °C and varied oxygen pressure (from 0.005 to 0.05 mbar). The third set of series was elaborated at different deposition times (from 15 to 60 min) while the oxygen pressure and the substrate temperature were fixed at 0.01 mbar and 760 °C, respectively. The films were characterized using X-ray diffractometer (XRD) for structural analysis, a scanning electron microscope for morphological analysis, a nano-indenter for mechanical analysis (hardness and Young's modulus), and Rutherford backscattering spectroscopy for thickness and stoichiometry measurements. Using optical emission spectroscopy, plasma diagnostic was carried out both in the vacuum and in the presence of oxygen with a pressure ranging from 0.01 to 0.05 mbar. Several neutral, ionic, and molecular species were identified such as Al, Al+, and Al++ in vacuum and in oxygen ambiance, O and AlO molecular bands in oxygen-ambient atmosphere. The spatiotemporal evolution of the most relevant species was achieved and their velocities were estimated. The highest amount of crystallized alumina in γ-phase was found in the films elaborated under 0.01 mbar of O2, at a substrate temperature of 780 °C, and a deposition time of 60 min.

  6. Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition.

    PubMed

    Premkumar, T; Zhou, Y S; Lu, Y F; Baskar, K

    2010-10-01

    ZnO nanostructures were deposited on GaN (0001), Al2O3 (0001), and Si (100) substrates using a high-pressure pulsed laser deposition (PLD) method. Vertically aligned hexagonal-pyramidal ZnO nanorods were obtained on the Al2O3 and Si substrates whereas interlinked ZnO nanowalls were obtained on the GaN substrates. A growth mechanism has been proposed for the formation of ZnO nanowalls based on different growth rates of ZnO polar and nonpolar planes. Both ZnO nanorods and nanowalls exhibit a strong E2H vibration mode in the micro-Raman spectra. The corresponding fluorescence spectra of ZnO nanorods and nanowalls showed near band emission at 3.28 eV. The ZnO nanorods grown on the Si substrates exhibited better crystalline and optical properties compared with the ZnO structures grown on the GaN and Al2O3 substrates. The high aspect ratio, good vertical alignment, and better crystallinity of the ZnO nanorods with tapered tips exhibited promising field emission performance with a low turn-on field of 2 V/μm, a high current density of 7.7 mA/cm2, and a large field enhancement factor.

  7. Design And Performance Of Optical Detectors Fabrication Setup Using Pulsed Laser Deposition (PLD)

    SciTech Connect

    Aboulfotouh, N.; Moharm, B.; El Magd, A. Abou; Atta, M.; Badr, Y.

    2009-09-27

    PLD system was used in the preparation of nano structured thin layers to be used as optical detectors. Our home made on--axis PLD setup utilizes XeCl excimer laser (308 nm, Pulse duration of 7 ns, repetition rate of 200 Hz). The laser energy is kept at 8 mj, and the vacuum chamber has been pumped to a background pressure of 10{sup -5} mbar. The films can be grown at different substrate temperatures in the range of 25-400 deg. C. The substrate temperature was always kept below 400 deg. C by using advanced temperature control system. The target-to-substrate distance was variable from 2 to 6 cm. SiO{sub 2} was used as substrates because of its low refractive index and high transparency in the UV, visible and near infrared ranges of spectra. LIPS technique has been used for plasma diagnoses during film deposition, using a double monochromator provided with photon detector. Homogenous thin films in the order of 20-200 nm thickness were obtained. Moreover, both amorphous and crystalline thin films can be obtained by adjusting the substrate temperature, target--substrate distance, type of substrate and finally pressure of ambient gas.

  8. Synthesis, structure, and biocompatibility of pulsed laser-deposited TiN nanowires for implant applications.

    PubMed

    Faruque, Mainul K; Darkwa, Kwadwo M; Watson, Christa Y; Waterman, Jenora T; Kumar, Dhananjay

    2012-07-01

    A bottom-up based pulsed laser deposition technique has been used to grow titanium nitride (TiN) nanowires on single crystalline substrates. The first step of this method is the dissolution of laser ablated gaseous TiN material in the nanodimensional catalytic gold (Au) liquid islands located on the substrate surfaces. The continuous dissolution of TiN results in the supersaturation of liquid Au with TiN followed by extrusion of solid TiN material in the nanowire form at the liquid/solid interface. The growth of TiN nanowires continues as long as its dissolution rate into the catalyst Au matches the extrusion rate of solid TiN. This bottom-up approach gives rise to a one-dimensional TiN nanowire structures (length: 200-300 nm and diameter: 20-30 nm) capped with Au. The ascent of Au nanodots to the top of TiN nanowires can be explained based on breaking of weaker bonds and building of stronger bonds. The TiN nanowires are provided vertical alignment by selecting a plane of the substrate that provides the least lattice mismatching to the (111) plane of TiN which has lower surface energy than its other planes: (100) or (110). After the successful formation and structural characterization, a lactate dehydrogenase (LDH) release assay has been used to confirm the biocompatibility and cytotoxicity of these nanowires. Copyright © 2012 Wiley Periodicals, Inc.

  9. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  10. Growth of EuO films on Si using Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Jain, Vivek S.; Rimal, Gaurab; Tang, Jinke

    Epitaxial monolayers of europium monoxide (EuO) deposited on silicon (Si) wafers are suited for spintronic applications such as adding spin filter tunneling and spin current to Si technology, and for probing phenomena like Anomalous Hall effect and Topological Hall effect. However, the innate chemical reactivity of europium (Eu) and Si prevents a direct synthesis of EuO by pulsed laser deposition technique, without significant contamination of the EuO/Si interface and degradation of the EuO thin film. Silicon oxides (SiO2-δ) on the surface of Si substrates, partial pressure of oxygen (O2) gas and water vapors in the vacuum chamber act as contaminants. Techniques like standard wet etching process, thermal annealing, and decomposition of SiO2-δ by the bombardment of metal ions, and their effectiveness is studied using the X-Ray diffraction (XRD) system. Our goal is one-process in situ integration of spin-functional magnetic oxides seamless on Si wafers. Also the mechanism for the ferromagnetic order in oxygen-deficient europium monoxide (EuO1-x) at temperatures higher than 69K (the Curie temperature of stoichiometric EuO) remains controversial. We have investigated the magnetization of EuO1-x thin films prepared via PLD as a function of (emu) vs (K) Wyoming EPSCoR.

  11. Enhanced Photocatalytic Performance Depending on Morphology of Bismuth Vanadate Thin Film Synthesized by Pulsed Laser Deposition.

    PubMed

    Jeong, Sang Yun; Choi, Kyoung Soon; Shin, Hye-Min; Kim, Taemin Ludvic; Song, Jaesun; Yoon, Sejun; Jang, Ho Won; Yoon, Myung-Han; Jeon, Cheolho; Lee, Jouhahn; Lee, Sanghan

    2017-01-11

    We have fabricated high quality bismuth vanadate (BiVO4) polycrystalline thin films as photoanodes by pulsed laser deposition (PLD) without a postannealing process. The structure of the grown films is the photocatalytically active phase of scheelite-monoclinic BiVO4 which was obtained by X-ray diffraction (XRD) analysis. The change of surface morphology for the BIVO4 thin films depending on growth temperature during synthesis has been observed by scanning electron microscopy (SEM), and its influence on water splitting performance was investigated. The current density of the BiVO4 film grown on a glass substrate covered with fluorine-doped tin oxide (FTO) at 230 °C was as high as 3.0 mA/cm(2) at 1.23 V versus the potential of the reversible hydrogen electrode (VRHE) under AM 1.5G illumination, which is the highest value so far in previously reported BiVO4 films grown by physical vapor deposition (PVD) methods. We expect that doping of transition metal or decoration of oxygen evolution catalyst (OEC) in our BiVO4 film might further enhance the performance.

  12. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Lo, Fang-Yuh; Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Chern, Ming-Yau; Liu, Hsiang-Lin

    2015-06-01

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  13. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-30

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  14. [Characterization of Nd Doped Films Prepared by Femtosecond Pulsed Laser Deposition].

    PubMed

    Yang, Xian-heng; Feng, Guo-ying; Yi, Jia-yu; Wang, Shu-tong; Zhou, Shou-huan

    2015-09-01

    Thin films of Nd:YAG and Nd:Glass were prepared on Si(100) substrate by pulsed laser deposition technology. The morphology of film surface and cross section, composition, absorption spectrum and photoluminescence (PL) spectra of films were investigated by scanning electron microscope (SEM), energy disperse spectroscopy (EDS), Fourier transform infrared spectrometer (FTIR), optical parametric oscillator (OPO) and grating spectrometer. The results show that both Nd:YAG films and Nd:Glass films grown on the substrates at room temperature are amorphous. Nd:YAG films grown by PLD contain Nd element with 0.15 at. % stoichiometric proportion. The absorption spectrum of bulk Nd:YAG target rather than deposited films exhibit two absorption peaks at 750 and 808 nm. There are no evident peaks in the photoluminescence spectra curve of Nd:YAG films. However, the photoluminescence spectra of Nd:Glass films with two sharp peaks at the wavelength of 877 and 1064 nm are observed. It indicates that Nd is doped into glass host as optically active Nd(3+) ions when Nd:Glass films grow at room temperature. But for Nd:YAG films, Nd don't incorporate into YAG host as Nd(3+) ions.

  15. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    DOE PAGES

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; ...

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can bemore » utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.« less

  16. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    SciTech Connect

    Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, Michael D.

    2015-04-03

    In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  17. Magnetic granularity in pulsed laser deposited YBCO films on technical templates at 5 K

    NASA Astrophysics Data System (ADS)

    Lao, M.; Hecher, J.; Pahlke, P.; Sieger, M.; Hühne, R.; Eisterer, M.

    2017-10-01

    The manifestation of granularity in the superconducting properties of pulsed laser deposited YBCO films on commercially available metallic templates was investigated by scanning Hall probe microscopy at 5 K and was related to local orientation mapping of the YBCO layer. The YBCO films on stainless steel templates with a textured buffer layer of yttrium stabilized ZrO2 grown by alternating beam assisted deposition have a mean grain size of less than 1 μ {{m}} with a sharp texture. This results in a homogeneous trapped field profile and spatial distribution of the current density. On the other hand, YBCO films on biaxially textured NiW substrates show magnetic granularity that persists down to a temperature of 5 K and up to an applied magnetic field of 4 T. The origin of the granular field profile is directly correlated to the microstructural properties of the YBCO layer adopted from the granular NiW substrate which leads to a spatially inhomogeneous current density. Grain-to-grain in-plane tilts lead to grain boundaries that obstruct the current while out-of-plane tilts mainly affect the grain properties, resulting in areas with low {J}{{c}}. Hence, not all grain boundaries cause detrimental effects on {J}{{c}} since the orientation of individual NiW grains also contributes to observed inhomogeneity and granularity.

  18. Growth of p-type ZnOS films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kenkichiro; Ohtsuki, Tohru; Tomita, Yasumasa; Kohno, Yosiumi; Maeda, Yasuhisa; Matsushima, Shigenori

    2017-01-01

    ZnO1-xSx films were deposited on quartz substrates by pulsed laser deposition (PLD) of ZnO1-xSx targets. The ZnO1-xSx films with S-contents of 0.03-0.17 were grown from the ZnO1-xSx targets sulfured at temperatures of 200 and 500 °C. The resistivity of the ZnO1-xSx films is slightly increased with the S-content. An increase of the O2-partial pressure in an atmosphere reduces the S-content in the films and drastically enhances the resistivity of the films. However, the carrier type of the films is still n-type. In order to incorporate excess S atoms into films, evaporation of Sulfur was performed during the PLD process. As a temperature of the S-evaporation is raised, the resistivity of the films is significantly enhanced and hole-conductivity appears in the films grown by the S-evaporation at 80 and 90 °C. By X-ray photoelectron spectroscopic measurements, the presence of SOx species is confirmed for the p-type ZnO1-xSx film. Both interstitial SO3 or SO4 clusters and complexes of Zn-vacancy with H are considered to be appropriate acceptors responsible for the hole-conductivity at room temperature.

  19. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    NASA Astrophysics Data System (ADS)

    Herklotz, A.; Dörr, K.; Ward, T. Z.; Eres, G.; Christen, H. M.; Biegalski, M. D.

    2015-03-01

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Srn+1TinO3n+1 Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  20. Biocompatible Mn2+-doped carbonated hydroxyapatite thin films grown by pulsed laser deposition.

    PubMed

    György, E; Toricelli, P; Socol, G; Iliescu, M; Mayer, I; Mihailescu, I N; Bigi, A; Werckman, J

    2004-11-01

    Mn(2+)-doped carbonated hydroxyapatite (Mn-CHA) thin films were obtained by pulsed laser deposition on Ti substrates. The results of the performed complementary diagnostic techniques, X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy investigations indicate that the films are crystalline with a Ca/P ratio of about 1.64-1.66. The optimum conditions, when nearly stoichiometric crystalline thin films were deposited, were found to be 10 Pa oxygen pressure, 400 degrees C substrate temperature, and postdeposition heat treatment in water vapors at the same substrate temperature. The films were seeded with L929 fibroblast and hFOB1.19 osteoblast cells and subjected to in vitro tests. Both fibroblast and osteoblast cells have a good adherence on the Mn-CHA film and on the Ti or polystyrene references. Proliferation and viability tests showed that osteoblast cells growth on Mn-CHA-coated Ti was enhanced as compared to uncoated pure Ti surfaces. Caspase-1 activity was not affected significantly by the material, showing that Mn-CHA does not induce apoptosis of cultured cells. These results demonstrate that Mn-CHA films on Ti should provoke a faster osteointegration of the coated implants as compared to pure Ti. (c) 2004 Wiley Periodicals, Inc. J Biomed Mater Res 71A: 353-358, 2004.

  1. Nucleation mechanism and microstructural assessment of SnO2 nanowires prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Chen, Z. W.; Lai, J. K. L.; Shek, C. H.

    2005-10-01

    Tin dioxide, SnO2, nanowires have been successfully synthesized by a pulsed laser deposition process based on a sintered cassiterite SnO2 target, being deposited on Si (100) substrates at room temperature. Transmission electron microscopy shows that nanowires are structurally perfect and uniform, and diameters range from 10 nm to 30 nm, and lengths of several hundreds nanometers to a few micrometers. X-ray diffraction and energy dispersive X-ray spectroscopy analysis indicate that the nanowires have the same crystal structure and chemical composition found in the tetragonal rutile form of SnO2. Selected area electron diffraction and high-resolution transmission electron microscopy reveal that the nanowires grow along the [110] growth direction. In addition to the fundamental Raman scattering peaks, the other two Raman scattering peaks are also observed. We discussed the possible reasons for the appearance of Raman scattering peaks at 518.7 and 701.8 cm-1. The growth process of the SnO2 nanowires is suggested to follow a vapor solid mechanism.

  2. Optical properties of pulsed-laser deposited BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Xu, Jie; Durisin, Daniel P.; Auner, Gregory W.

    2005-04-01

    Thin films of barium titanate (BaTiO3) have been grown on Si (100) and UV fused silica substrates using KrF pulsed-laser deposition (PLD). The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and UV/VIS/NIR spectroscopy. Smooth and stoichiometric films were grown on Si (100) substrate at O2 pressure range of 10-30 mTorr and substrate temperature of 600°C-620°C. The XRD patterns of the films revealed the polycrystalline peaks with a preferential orientation. The optical properties of BaTiO3 films were investigated in terms of UV-VIS transmission spectrum of the films deposited on UV fused silica substrate. The spectral dependences of refractive index and absorption coefficient, and the thickness of the films have been calculated from optical transmission measurements using the envelope method. The band gap energy (Eg) of BaTiO3 films was found to be 3.35eV.

  3. Pulsed laser-deposited VO2 thin films on Pt layers

    NASA Astrophysics Data System (ADS)

    Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

    2013-03-01

    VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

  4. Transmission of reactive pulsed laser deposited VO2 films in the THz domain

    NASA Astrophysics Data System (ADS)

    Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed

    2016-08-01

    This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO2) films in the terahertz (THz) frequency range, namely the transition temperature TIMT, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O2 pressure (PO2) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO2 films obtained at low PO2 exhibit low TIMT, large ΔA, and narrow ΔH. Increasing PO2 results in VO2 films with higher TIMT, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

  5. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    SciTech Connect

    Kuzanyan, A S; Kuzanyan, A A; Petrosyan, V A; Pilosyan, S Kh; Grasiuk, A Z

    2013-12-31

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuO were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than ±2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency. (laser deposition of thin films)

  6. High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

    NASA Astrophysics Data System (ADS)

    Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

    2017-09-01

    For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

  7. Influences of pulse laser parameters on properties of AISI316L stainless steel thin-walled part by laser material deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xinlin; Deng, Dewei; Yi, Hongli; Xu, Haiyan; Yang, Shuhua; Zhang, Hongchao

    2017-07-01

    Laser material deposition (LMD) which combines laser cladding and rapid prototyping technique has been widely used to build full density metal parts directly without using modules or tools. There are many parameters affecting the quality and properties of the LMD parts through changing the energy distribution. Pulse laser provides the user an added degree of controlling over the energy distribution which seriously affects the solidification of molten pool and eventual part formation. In the present study, a series of AISI316L stainless steel thin-walled parts are successfully produced by LMD with different pulse laser parameters to investigate the effects of energy distribution on characteristics (microstructure, hardness, residual stress and tensile properties). The results show that the characteristics of LMD parts are obviously influenced by laser mode (pulse or continuous wave laser) and pulse laser parameters (T_pulse and T_pause). The microstructure of parts presents various grain sizes with the different pulse laser parameters. The different value (D-value) between the hardness of edge and central region varies considerably with the pulse laser parameters. The maximum D-value of hardness is presented in the part deposited by continuous wave laser. The maximum hardness is presented in item 4 (T_pulse=10 ms, T_pause=10 ms) and the minimum hardness is presented in part fabricated by continuous wave laser where the residual stress on Z-component presents tensile stress at the edge region and compress stress at the central region but opposite trend happens to the residual stress on Y-component. Tensile stress on Z-component at the edge region increases even presents compress tensile with the decrease of T_pulse. The stress on Y-component presents a periodic variation between tensile stress and compress stress in the Y-direction of the part fabricated by pulse laser. The ultimate tensile strength (UTS) of the part fabricated using pulse laser is higher than the

  8. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    SciTech Connect

    Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

  9. Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding.

    PubMed

    Wang, Ke; Wang, Hailin; Zhu, Guangzhi; Zhu, Xiao

    2017-02-10

    A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC), and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC) using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

  10. Effects of experimental conditions on the morphologies, structures and growth modes of pulsed laser-deposited CdS nanoneedles.

    PubMed

    Li, Hui; Chen, Li; Zhao, Yu; Liu, Xujun; Guan, Leilei; Sun, Jian; Wu, Jiada; Xu, Ning

    2014-02-22

    CdS nanoneedles with different morphologies, structures, and growth modes have been grown on Ni-coated Si(100) surface under different experimental conditions by pulsed laser deposition method. The effects of catalyst layer, substrate temperature, and laser pulse energy on the growth of the CdS nanoneedles were studied in detail. It was confirmed that the formation of the molten catalyst spheres is the key to the nucleation of the CdS nanoneedles by observing the morphologies of the Ni catalyst thin films annealed at different substrate temperatures. Both the substrate temperature and laser pulse energy strongly affected the growth modes of the CdS nanoneedles. The secondary growth of the smaller nanoneedles on the top of the main nanoneedles was found at appropriate conditions. A group of more completed pictures of the growth modes of the CdS nanoneedles were presented.

  11. Antimicrobial oligo(p-phenylene-ethynylene) film deposited by resonant infrared matrix-assisted pulsed laser evaporation.

    PubMed

    Ge, Wangyao; Yu, Qian; López, Gabriel P; Stiff-Roberts, Adrienne D

    2014-04-01

    The antimicrobial oligomer, oligo(p-phenylene-ethynylene) (OPE), was deposited as thin films by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) on solid substrates and exhibited light-induced biocidal activity. The biocidal activity of OPE thin films deposited by spin-coating and drop-casting was also investigated for comparison. Enhanced bacterial attachment and biocidal efficiency of the film deposited by RIR-MAPLE were observed and attributed to nanoscale surface topography of the thin film. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition

    SciTech Connect

    Soltani, M.; Chaker, M.; Haddad, E.; Kruzelesky, R. V.

    2006-05-15

    Thermochromic undoped and metal (Ti and W)-doped VO{sub 2} smart coatings were achieved on Kapton HN by reactive pulsed laser deposition. The optimization of the deposition was conducted with Si (100) substrates. The coatings were deposited at relatively low deposition temperatures (250, 300, and 350 deg. C), which are compatible with the characteristics of Kapton. The stoichiometry of the VO{sub 2}-coated Kapton was confirmed by x-ray photoelectron spectroscopy analysis of the vanadium and oxygen bands. Moreover, the single phase VO{sub 2} was confirmed by x-ray diffraction of VO{sub 2}/Si synthesized at 300 deg. C. Unlike VO{sub 2}/Kapton, the VO{sub 2}/Si exhibited the well-known semiconductor-to-metallic transition, as shown by the temperature dependence of the infrared transmittance. This coating exhibited a similar transition temperature to that of VO{sub 2} single crystal ({approx_equal}68 deg. C), but a small transmittance switching (about 7%) at 2.5 {mu}m. The temperature dependence of the electrical resistivity of all coatings on Kapton was investigated by means of the standard four-point probe technique. The resistivity decreased with increasing temperature. No abrupt semiconductor-to-metallic transition was observed either for undoped or for metal-doped VO{sub 2} coatings. It was found that Ti and W dopants have an antagonistic effect on the resistivity. The resistivity was enhanced by the Ti dopant, whereas it was decreased for W-doped VO{sub 2} coatings. These results show that the tunability of the resistivity can be tailored either by controlling the deposition temperature or by adjusting the concentration of Ti and W dopants. In addition, at room temperature a much higher temperature coefficient of resistance of -3.29%/ deg. C was achieved in W(0.5%)-doped VO{sub 2}/Kapton. Finally, these VO{sub 2} smart coatings are promising materials for the IR sensing and sunshield applications.

  13. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  14. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    NASA Astrophysics Data System (ADS)

    Ehsani, M. H.; Mehrabad, M. Jalali; Kameli, P.

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films.

  15. Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO3

    DOE PAGES

    Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.; ...

    2016-11-11

    We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO3. In this study, we show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD.more » We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD “self-organizes” local step flow on a length scale consistent with the substrate temperature and PLD parameters.« less

  16. Tailoring Multilayered BiVO4 Photoanodes by Pulsed Laser Deposition for Water Splitting.

    PubMed

    Murcia-López, Sebastián; Fàbrega, Cristian; Monllor-Satoca, Damián; Hernández-Alonso, María D; Penelas-Pérez, Germán; Morata, Alex; Morante, Juan R; Andreu, Teresa

    2016-02-17

    Pulsed laser deposition (PLD) is proposed as promising technique for the fabrication of multilayered BiVO4-based photoanodes. For this purpose, bare BiVO4 films and two heterojunctions, BiVO4/SnO2 and BiVO4/WO3/SnO2, have been prepared using consecutive ablation of assorted targets in a single batch. The ease, high versatility and usefulness of this technique in engineering the internal configuration of the photoanode with stoichiometric target-to-substrate transfer are demonstrated. The obtained photocurrent densities are among the highest reported values for undoped BiVO4 without oxygen evolution catalysts (OEC). A detailed analysis of the influence of SnO2 and WO3 layers on the charge transport properties because of the changes at the internal FTO/semiconductor interface is performed through transient photocurrent measurements (TPC), showing that the BiVO4/WO3/SnO2 heterostructure attains a significant decrease in the internal losses and reaches high photocurrent values. This study is expected to open the door to the fabrication of other systems based on ternary (or even more complex) metal oxides as photoanodes for water splitting, which is a promising alternative for obtaining materials able to fulfill the different requierements in the development of more efficient systems for this process.

  17. Reinforced Pulsed Laser-Deposited Hydroxyapatite Coating on 316 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Bajpai, Shubhra; Gupta, Ankur; Pradhan, Siddhartha Kumar; Mandal, Tapendu; Balani, Kantesh

    2014-10-01

    Hydroxyapatite (HA) is a widely used bioceramic known for its chemical similarity with that of bone and teeth (Ca/P ratio of 1.67). But, owing to its extreme brittleness, α-Al2O3 is reinforced with HA and processed as a coating via pulsed laser deposition (PLD). Reinforcement of α-Al2O3 (50 wt.%) in HA via PLD on 316L steel substrate has shown modulus increase by 4% and hardness increase by 78%, and an improved adhesion strength of 14.2 N (improvement by 118%). Micro-scratching has shown an increase in the coefficient-of-friction from 0.05 (pure HA) to 0.17 (with 50 wt.% Al2O3) with enhancement in the crack propagation resistance (CPR) up to 4.5 times. Strong adherence of PLD HA-Al2O3 coatings (~4.5 times than that of HA coating) is attributed to efficient release of stored tensile strain energy (~17 × 10-3 J/m2) in HA-Al2O3 composites, making it a potential damage-tolerant bone-replacement surface coating.

  18. Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO3

    NASA Astrophysics Data System (ADS)

    Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.; Lee, Ho Nyung; Christen, H. M.; Zschack, P.; Larson, B. C.

    2016-11-01

    We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO3 . We show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD "self-organizes" local step flow on a length scale consistent with the substrate temperature and PLD parameters.

  19. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Preziosi, Daniele; Sander, Anke; Barthélémy, Agnès; Bibes, Manuel

    2017-01-01

    Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  20. Plasma interactions determine the composition in pulsed laser deposited thin films

    SciTech Connect

    Chen, Jikun; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas; Döbeli, Max

    2014-09-15

    Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La{sub 0.6}Sr{sub 0.4}MnO{sub 3}, we demonstrate for as grown La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} films that a congruent transfer of metallic species is achieved in two pressure windows: ∼10{sup −3} mbar and ∼2 × 10{sup −1} mbar. In the intermediate pressure range, La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

  1. One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition

    PubMed Central

    Loh, Tamie A. J.; Chua, Daniel H. C.; Wee, Andrew T. S.

    2015-01-01

    Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect-to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its structural analogue MoS2. Here we report the direct fabrication of highly crystalline few-layer WS2 on silver substrates by pulse laser deposition at the relatively low temperature of 450 °C. The growth takes places by conventional epitaxy, through the in-situ formation of nearly lattice-matching Ag2S on the silver surface. Intriguingly, it was observed that the resulting film was composed of not only the usual semiconducting 2H-WS2 structure but also the less common metallic 1T-WS2. Modifications of the synthesis parameters allow for control over the crystalline quality, film thickness and crystal phase composition of the resulting WS2 film. PMID:26657172

  2. Pulsed-laser deposition of crystalline cobalt ferrite thin films at lower temperatures

    NASA Astrophysics Data System (ADS)

    Jiles, David; Raghunathan, Arun; Nlebedim, Ikenna; Snyder, John

    2010-03-01

    Cobalt ferrite thin films have been proposed for various engineering applications due to their exceptional magnetic, magnetoelastic, magnetotransport, magnetooptical properties. In this research, cobalt ferrite thin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition (PLD) technique at substrate temperatures ranging from 250 C to 600 C. It has been shown in this study, that polycrystalline films with (111)-preferred orientation can be prepared at substrate temperatures as low as 250 C, as opposed to a report of optimum 600 C substrate temperature [1]. Thermal expansion mismatch between the film and substrate was found to have a substantial effect on the magnetic properties of the cobalt ferrite films, due to the large magnetoelastic coupling of cobalt ferrite. The growth of crystalline cobalt ferrite films at such low temperatures indicates the potential to use cobalt ferrite for MEMS devices and sensor applications [2] including integration with a wider range of multilayered device structures. This research was supported by the UK EPSRC (EP/D057094) and the US NSF (DMR-0402716). [1] J. Zhou et. al, Applied Surface Sciences, 253 (2007), p. 7456. [2] J. A. Paulsen et. al., Journal of Applied Physics, 97 (2005), p. 044502.

  3. Growth and Characterization of Pulsed-Laser-Deposited Ilmenite Hematite Thin Films

    NASA Astrophysics Data System (ADS)

    Kale, P.; Padmini, P.; Dou, J.; Navarrete, L.; Shamsuzzoha, M.; Schad, R.; Pandey, R. K.

    2007-09-01

    The ilmenite hematite (1 - x) FeTiO3 · xFe2O3 solid solution system is considered to be a novel material for spin-electronics, microelectronics, high-temperature electronics, and radhard electronics. This paper focuses on thin films of composition x = 0.33 grown on (100) MgO single-crystal substrates using pulsed-laser deposition (PLD) under different argon oxygen mixtures. The surface of the MgO was found to possess MgO2 crystals, yielding an orientation relationship, [001] MgO ∥ [011] MgO2 and ( overline{1} 00)MgO ∥ ( overline{1} 10) MgO2. The structural characterizations show that the films are crystalline and homogeneous without any secondary phase. The films show a weak and inclined (11 overline{2} 0) growth epitaxy. A bandgap of 3.4 3.7 eV was obtained for these films from optical measurements carried out in the UV visible region. Electrical measurements confirmed the semiconducting behavior. However, the resistivity was found to increase substantially on the slightest addition of oxygen into the chamber.

  4. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  5. Transition layers in metal bilayers produced by pulsed laser deposition in vacuum

    NASA Astrophysics Data System (ADS)

    Tselev, A.; Gorbunov, A.; Pompe, W.

    2002-09-01

    Main processes which accompany the interaction of energetic particles with the substrate and the growing film in the pulsed laser deposition (PLD) in vacuum are considered. The subplantational film growth mode, which is inherent to PLD, results in the formation of diffuse transition layers (TLs) between the individual materials of the substrate and film. It is argued that thermodynamic forces do not play a significant role in formation of TLs at room temperature by PLD in vacuum, and the resulting concentration profile between the individual materials is determined almost purely by ballistic effects. Up to 10 nm thick TLs in Fe/Al and Ag/Co PLD-produced bilayers have been determined by numerical simulations, semiquantitative analysis and experimentally by means of a quartz thickness monitor. The latter technique has been proposed as an in situ method for determination of TLs between the individual materials with different sputtering yields. The concentration profiles of TLs are featured by a steep slope on the substrate side and an up to 10 nm long tail of the underlying material in the upper layer. copyright 2002 American Vacuum Society.

  6. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.

    PubMed

    Ou, Sin Liang; Wuu, Dong Sing; Liu, Shu Ping; Fu, Yu Chuan; Huang, Shih Cheng; Horng, Ray Hua

    2011-08-15

    In this study, indium-tin oxide (ITO)/Al-doped zinc oxide (AZO) composite films were fabricated by pulsed laser deposition and used as transparent contact layers (TCLs) in GaN-based blue light emitting diodes (LEDs). The ITO/AZO TCLs were composed of the thin ITO (50 nm) films and AZO films with various thicknesses from 200 to 1000 nm. Conventional LED with ITO (200 nm) TCL prepared by E-beam evaporation was fabricated and characterized for comparison. From the transmittance spectra, the ITO/AZO films exhibited high transparency above 90% at wavelength of 465 nm. The sheet resistance of ITO/AZO TCL decreased as the AZO thickness increased, which could be attributed to the increase in a carrier concentration, leading to a decrease in the forward bias of LED. The LEDs with ITO/AZO composite TCLs showed better light extraction as compared to LED with ITO TCL in compliance with simulation. When an injection current of 20 mA was applied, the output power for LEDs fabricated with ITO/AZO TCLs had 45%, 63%, and 71% enhancement as compared with those fabricated using ITO (200 nm) TCL for the AZO thicknesses of 200, 460, and 1000 nm, respectively.

  7. Phase control of Mn-based spinel films via pulsed laser deposition

    SciTech Connect

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; Bedzyk, Michael J.; Fenter, Paul

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.

  8. Advanced functional oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Millon, E.

    2013-08-01

    Pulsed-laser deposition is now a largely used growth method to prepare functional and multifunctional oxide films for application in microelectronics, spintronics, optics, materials for energy… The functional properties of such oxide films are strongly depending on the crystalline structure, and on the chemical composition through the local environment of cationic species surrounded by oxygen. While large oxygen deficiency cannot be obtained by classical growth method or in bulk state, oxide films with a high content of oxygen vacancies may be obtained by PLD. For oxide systems presenting possible stable sub-oxides, the formation of oxygen vacancies is linked to a decrease of the cationic valence state. A complete reduction can be observed leading to particular electronic properties: the case of TiOx (1.5 < x < 2) will be therefore presented and discussed. When no thermodynamically stable sub-oxides can be involved, the large oxygen deficiency may lead to the formation of nanocomposite films constituted by a metallic phase embedded in a stoichiometric oxide matrix. This phase separation induced by the control of oxygen pressure during the growth is in particular evidenced on Ga2Ox (2.1 < x < 3) films and their related physical (electrical and optical) properties are discussed.

  9. Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

    SciTech Connect

    Li Yuanjie; Liu Zilong; Ren Jiangbo

    2011-05-15

    Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O{sub 2} exhibited p-type conductivity with hole concentration of 5x10{sup 17} cm{sup -3} and hole mobility of 0.3 cm{sup 2}/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites P{sub Zn} and zinc vacancies V{sub Zn} in the P-doped ZnO films.

  10. Phase control of Mn-based spinel films via pulsed laser deposition

    SciTech Connect

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; Bedzyk, Michael J.; Fenter, Paul

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.

  11. Manifestation of unusual size effects in granular thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sergeenkov, S.; Cichetto, L.; Diaz, J. C. C. A.; Bastos, W. B.; Longo, E.; Araújo-Moreira, F. M.

    2016-11-01

    We demonstrate manifestation of some rather unusual size effects in granular thin films prepared by a pulsed laser deposition technique. We observed that the temperature dependence of resistivity ρ(T) notably depends on the relation between the grain size Rg and the film thickness d. Namely, more granular LaNiO3 thin films (with small values of Rg) grown on LaAlO3 substrate are found to follow a universal ρ(T) ∝T 3 / 2 law for all the measured temperatures. While less granular thin films (with larger values of Rg), exhibit a more complicated behavior accompanied by a clear-cut crossover (around Tcr = 200 K), from ρ(T) ∝T 3 / 2 (for 20 K < T < 200 K) to ρ(T) ∝ T (for 200 K < T < 300 K). The obtained results are attributed to manifestation of the finite temperature size effects (when an average grain size Rg becomes comparable with the thermal de Broglie wavelength Λ) leading to the crossover temperature Tcr ∝(d /Rg) 2 .

  12. Phase control of Mn-based spinel films via pulsed laser deposition

    DOE PAGES

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; ...

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgOmore » substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.« less

  13. Fabrication of antimicrobial silver-doped carbon structures by combinatorial pulsed laser deposition.

    PubMed

    Mihailescu, Ion N; Bociaga, Dorota; Socol, Gabriel; Stan, George E; Chifiriuc, Mariana-Carmen; Bleotu, Coralia; Husanu, Marius A; Popescu-Pelin, Gianina; Duta, Liviu; Luculescu, Catalin R; Negut, Irina; Hapenciuc, Claudiu; Besleaga, Cristina; Zgura, Irina; Miculescu, Florin

    2016-12-30

    We report on the selection by combinatorial pulsed laser deposition of Silver-doped Carbon structures with reliable physical-chemical characteristics and high efficiency against microbial biofilms. The investigation of the films was performed by scanning electron microscopy, high resolution atomic force microscopy, energy dispersive X-Ray Spectroscopy, X-ray diffraction, Raman spectroscopy, bonding strength "pull-out" tests, and surface energy measurements. In vitro biological assays were carried out using a large spectrum of bacterial and fungal strains, i.e., Staphylococcus aureus, Staphylococcus epidermidis, Pseudomonas aeruginosa, Enterococcus faecalis and Candida albicans. The biocompatibility of the films obtained was evaluated on MG63 mammalian cell cultures. The optimal combination with reasonable physical-chemical properties, efficient protection against microbial colonization and beneficial effects on human cells was found for Silver-doped Carbon films containing 2 to 7 at.% silver. These mixtures can be used to fabricate safe and efficient coatings of metallic implants, with the goal to decrease the risk of implant associated biofilm infections which are difficult to treat and often responsible for implant failure.

  14. Phase control of Mn-based spinel films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; Bedzyk, Michael J.; Fenter, Paul

    2016-07-01

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn2O4 and fully charged cathode Mn2O4. The tetragonal MgMn2O4 (MMO) phase is obtained on MgAl2O4 substrates, while the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn2O4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn2O4, for x = 0, 1). This capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.

  15. Characterization of amorphous carbon films grown by pulsed-laser deposition

    SciTech Connect

    Siegal, M.P.; Tallant, D.R.; Barbour, J.C.; Provencio, P.N.; Martinez-Miranda, L.J.; DiNardo, N.J.

    1998-09-01

    Amorphous carbon (a-C) films grow via energetic processes such as pulsed-laser deposition (PLD). The cold-cathode electron emission properties of a-C are promising for flat-panel display and vacuum microelectronics technologies. These ultrahard films consist of a mixture of 3-fold and 4-fold coordinated carbon atoms, resulting in an amorphous material with diamond-like properties. The authors study the structures of a-C films grown at room temperature as a function of PLD energetics using x-ray reflectivity, Raman spectroscopy, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. While an understanding of the electron emission mechanism in a-C films remains elusive, the onset of emission is typically preceded by conditioning where the material is stressed by an applied electric field. To simulate conditioning and assess its effect, the authors use the spatially-localized field and current of a scanning tunneling microscope tip. Scanning force microscopy shows that conditioning alters surface morphology and electronic structure. Spatially-resolved electron energy loss spectroscopy indicates that the predominant bonding configuration changes from predominantly 4-fold to 3-fold coordination.

  16. Bone growth on and resorption of calcium phosphate coatings obtained by pulsed laser deposition.

    PubMed

    Clèries, L; Fernández-Pradas, J M; Morenza, J L

    2000-01-01

    Three different calcium phosphate coatings of crystalline hydroxyapatite (HA), alpha- and beta-tricalcium phosphate (alpha+beta-TCP), or amorphous calcium phosphate (ACP) obtained by pulsed laser deposition on Ti-6Al-4V were incubated in a potentially osteogenic primary cell culture (rat bone marrow) in order to evaluate the amount and mode of mineralized bone matrix formation after 2 weeks with special emphasis on the type of interfacial structure that was created. Evaluation techniques included fluorescence labeling and scanning electron microscopy. The resistance to cellular resorption by osteoclasts was also studied. Bone matrix delaminated from the ACP coatings, while it remained on the HA and the alpha+beta-TCP coatings even after fracturing. A cementlike line was seen as the immediate contiguous interface with the nondegrading dense HA surface and with the surface of the remaining porous beta-TCP coating. Highly dense and crystalline HA coatings do not dissolve but are capable of establishing a strong bond with the bone matrix grown on top. Chemical and mechanical bonding were considered in this case. Cellular resorption was practically not observed on the HA coatings, but it was observed on the alpha+beta-TCP coatings. Resorption took place as dissolution that was due to the acidic microenvironment.

  17. Applications of the matrix-assisted pulsed laser evaporation method for the deposition of organic, biological and nanoparticle thin films: a review

    NASA Astrophysics Data System (ADS)

    Caricato, Anna Paola; Luches, Armando

    2011-11-01

    The matrix-assisted pulsed laser evaporation (MAPLE) technique offers an efficient mechanism to transfer soft materials from the condensed to the vapor phase, preserving the versatility, ease of use and high deposition rates of the pulsed laser deposition (PLD) technique. The materials of interest (polymers, biological cells, proteins, …) are diluted in a volatile solvent. Then the solution is frozen and irradiated with a pulsed laser beam. Here, important results of MAPLE deposition of polymer, biomaterials and nanoparticle films are summarized. Finally, the MAPLE mechanism is discussed. A review of experimental and theoretical works points out that the simple model of individual molecule evaporation must be abandoned. Solute concentration, solubility, evaporation temperature of solvents, laser pulse power density and laser penetration depth emerge as important parameters to explain the morphology of the MAPLE-deposited films.

  18. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  19. Structural and Electrical Properties of Heteroepitaxial Magnetic Oxide Junction Diode Fabricated by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Wong, K. H.

    2010-11-01

    Heteroepitaxial junctions formed by p-type strontium doped lanthanum manganite and n-type cobalt doped titanium dioxide were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. The La0.7Sr0.3MnO3 (LSMO) layers were grown at 650° C and under 150 mTorr ambient oxygen pressure. They showed room temperature ferromagnetism and metallic-like electrical conduction with a resistivity of 0.015 ohm cm at 300 K. The CoxTi1-xO2[x = 0.05 and 0.1] (CTO), which, at anatase phase, was reported as a wide-band-gap dilute magnetic semiconductor, was deposited on the LSMO film surface at 600° C with an ambient oxygen pressure of 20 mTorr. The as-grown CTO films exhibited pure anatase crystalline phase and semiconductor-like conduction. Under optimized fabrication conditions the CTO/LSMO junction revealed a heteroepitaxial relationship of (004)CTO‖‖(001)LSMO‖‖(001)LAO. Electrical characterization of these p-n junctions yielded excellent rectifying characteristics with a current rectifying ratio over 1000 at room temperature. The electrical transport across these diodes was dominated by diffusion current at low current (low bias voltage) regime and by recombination current at high current (high bias voltage) regime. Our results have demonstrated an all-oxide spintronic junction diode with good transport property. The simultaneous of electrical and magnetic modulation in a diode junction is therefore potentially realizable.

  20. Physicochemical investigation of pulsed laser deposited carbonated hydroxyapatite films on titanium.

    PubMed

    Rau, Julietta V; Generosi, Amanda; Laureti, Sara; Komlev, Vladimir S; Ferro, Daniela; Cesaro, Stella Nunziante; Paci, Barbara; Albertini, Valerio Rossi; Agostinelli, Elisabetta; Barinov, Sergey M

    2009-08-01

    Carbonated hydroxyapatite (CHA)-coated titanium can find wide applications as bone substitute implant in bone and dental surgery and orthopedics, promoting osseointegration with a host bone and ensuring biocompatibility and bioactivity. In this work, carbonated hydroxyapatite films were prepared on titanium substrates by pulsed laser deposition at different substrate temperatures ranging from 30 to 750 degrees C. The properties of films were investigated by scanning electron microscopy, atomic force microscopy, energy-dispersive X-ray diffraction, and Fourier transform infrared spectroscopy. Vickers microhardness measurements of the composite film-substrate systems were performed, and the intrinsic hardness of films was separated from the composite hardness using a "law-of-mixtures" approach and taking into account the indentation size effect. The prepared CHA films are nearly stoichiometric with a Ca/P atomic ratio of 2.0-2.2. The films deposited in the 30-500 degrees C temperature range are about 9 microm thick, amorphous, having an average roughness of 60 nm. At higher temperature, 700-750 degrees C, the films are about 4 microm thick, show a finer surface morphology and an average roughness of 20 nm. At 750 degrees C the films are amorphous, whereas at 700 degrees C they are crystalline and textured along the (202) and (212) directions. The intrinsic hardness of the films increased with an increase in substrate temperature, being as low as 5 GPa at 30 degrees C and reaching a high value of 28 GPa at 700 degrees C. The rich information gained by the joint use of the mentioned techniques allowed a comprehensive characterization of this system.

  1. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  2. Microstructure and electronic band structure of pulsed laser deposited iron fluoride thin film for battery electrodes.

    PubMed

    Santos-Ortiz, Reinaldo; Volkov, Vyacheslav; Schmid, Stefan; Kuo, Fang-Ling; Kisslinger, Kim; Nag, Soumya; Banerjee, Rajarshi; Zhu, Yimei; Shepherd, Nigel D

    2013-04-10

    Battery electrodes in thin-film form are free of the binders used with traditional powder electrodes and present an ideal platform to obtain basic insight to the evolution of the electrode-electrolyte interface passivation layer, the formation of secondary phases, and the structural underpinnings of reversibility. This is particularly relevant to the not yet fully understood conversion electrode materials, which possess enormous potential for providing transformative capacity improvements in next-generation lithium-ion batteries. However, this necessitates an understanding of the electronic charge transport properties and band structure of the thin films. This work presents an investigation of the electron transport properties of iron fluoride (FeF2) thin-film electrodes for Li-ion batteries. FeF2 thin films were prepared by pulsed-laser deposition, and their phase purity was characterized by electron microscopy and diffraction. The grown materials are polycrystalline FeF2 with a P42/mnm crystallographic symmetry. Room-temperature Hall measurements reveal that as-deposited FeF2 is n-type: the Hall coefficients were negative, electron mobility was 0.33 cm2/(V s) and resistivity was 0.255 Ω cm. The electronic band diagram of FeF2 was obtained using a combination of ultraviolet photoelectron spectroscopy, photoluminescence, photoluminescence excitation and optical absorption, which revealed that FeF2 is a direct bandgap, n-type semiconductor whose band structure is characterized by a 3.4 eV bandgap, a workfunction of ∼4.51 eV, and an effective Fermi level that resides approximately 0.22 eV below the conduction band edge. We propose that the shallow donor levels at 0.22 eV are responsible for the measured n-type conductivity. The band diagram was used to understand electron transport in FeF2 thin film and FeF2-C composite electrodes.

  3. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  4. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vanderford, John D.

    Transparent conducting oxides have become a fundamental electronic material for numerous current technologies and are optimally deposited as a uniform thin film with low electrical resistivity and high optical transmission. The purpose of this study is to characterize the electrical and optical characteristics of three TCO: Indium Tin Oxide (ITO) (95%, 5%), Zinc Oxide (ZnO), and Aluminum doped Zinc Oxide (AZO) (98%, 2%). The deposition techniques of neutralized ion beam sputtering and pulsed laser deposition will be investigated. ITO will be deposited from commercially available sintered targets whereas ZnO and AZO will be deposited from powder pressed targets. The results have shown that AZO deposit AZO from a powder pressed target with comparable electrical and optical properties to that of ITO deposited from a sintered target.

  5. Highly textured fresnoite thin films synthesized in situ by pulsed laser deposition with CO2 laser direct heating

    NASA Astrophysics Data System (ADS)

    Lorenz, Michael; de Pablos-Martin, Araceli; Patzig, Christian; Stölzel, Marko; Brachwitz, Kerstin; Hochmuth, Holger; Grundmann, Marius; Höche, Thomas

    2014-01-01

    Fresnoite Ba2TiSi2O8 (BTS) thin films were grown and crystallized in situ using pulsed laser deposition (PLD) with CO2 laser direct heating of the a-plane sapphire (1 1 0) substrates up to 1250 °C. Starting with 775 °C growth temperature, (0 0 1)- and (1 1 0)-textured BTS and BaTiO3 phases, respectively, could be assigned in the films, and the typical fern-like BTS crystallization patterns appear. For higher process temperatures of 1100 to 1250 °C, atomically smooth, terraced surface of the films was found, accompanied by crystalline high-temperature phases of Ba-Ti-Si oxides. HAADF micrographs taken in both scanning transmission electron microscopy and energy-dispersive x-ray spectrometry mode show details of morphology and elemental distribution inside the films and at the interface. To balance the inherent Si deficiency of the BTS films, growth from glassy BTS × 2 SiO2 and BTS × 2.5 SiO2 targets was considered as well. The latter targets are ideal for PLD since the employed glasses possess 100% of the theoretical density and are homogeneous at the atomic scale.

  6. Pulsed-laser deposition and characterization of hetero-paired thin-film gallium arsenide

    NASA Astrophysics Data System (ADS)

    Erlacher, Artur

    2005-07-01

    The III-V compound semiconductor gallium arsenide (GaAs) possesses a direct bandgap and a six-fold higher electron mobility than the indirect semiconductor silicon (Si). For that reason GaAs based devices are of particular significance for high-speed digital (mobile phones, radar systems, all-optical switches, etc.) and high-performance optoelectronic applications (high-efficiency solar cells, high-power IR laser diodes, etc.). The state-of-the-art GaAs device production is mainly covered by rather sophisticated and expensive techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). This project investigated pulsed-laser deposition (PLD) as a cost effective alternative method to grow thin-film GaAs. In addition, detailed data of electronic and optoelectronic properties of GaAs/Si hetero-structures were obtained. During this dissertation about 110 GaAs thin films have been formed on glass and Si substrates by PLD with different process parameters. The crystal structure and surface properties of the thin films have been analyzed by x-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Electronic and optoelectronic features of GaAs/Si hetero-structures have been investigated by current-voltage (I-V) characterization and photocurrent (PC) experiments. In addition, theoretical models describing the ablation temperature and the deposited film profile are presented. The experimental results reveal that the sample textures consist of a predominate amorphous portion and (111) oriented crystallites. Furthermore, these features are widely independent of the laser ablation wavelength and do not depend on the substrate surface texture. However, the ablation wavelength influences and varies the formation of clusters on the film surfaces as demonstrated with AFM. Doped GaAs thin films deposited on counter-doped Si substrates exhibit rectifying I-V characteristics. The spectral response data shows that the Ga

  7. Graphene-deposited microfiber photonic device for ultrahigh-repetition rate pulse generation in a fiber laser.

    PubMed

    Qi, You-Li; Liu, Hao; Cui, Hu; Huang, Yu-Qi; Ning, Qiu-Yi; Liu, Meng; Luo, Zhi-Chao; Luo, Ai-Ping; Xu, Wen-Cheng

    2015-07-13

    We report on the generation of a high-repetition-rate pulse in a fiber laser using a graphene-deposited microfiber photonic device (GMPD) and a Fabry-Perot filter. Taking advantage of the unique nonlinear optical properties of the GMPD, dissipative four-wave mixing effect (DFWM) could be induced at low pump power. Based on DFWM mode-locking mechanism, the fiber laser delivers a 100 GHz repetition rate pulse train. The results indicate that the small sized GMPD offers an alternative candidate of highly nonlinear optical component to achieve high-repetition rate pulses, and also opens up possibilities for the investigation of other abundant nonlinear effects or related fields of photonics.

  8. Rietveld X-ray diffraction analysis of nanostructured rutile films of titania prepared by pulsed laser deposition

    SciTech Connect

    Murugesan, S.; Kuppusami, P.; Mohandas, E.

    2010-01-15

    Rietveld powder X-ray diffraction analysis of the rutile films of titanium oxide prepared by pulsed laser deposition was carried out. The crystallite size increased with increase of substrate temperature, while the strain showed a reverse trend. The films synthesized at temperature {>=}573 K showed that the crystal structure was almost close to that of bulk rutile structure. The influence of the substrate temperature on the lattice parameters and oxygen coordinates were also studied in the present work.

  9. A nucleation and growth model of silicon nanoparticles produced by pulsed laser deposition via Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Wang, Yinglong; Qin, Aili; Chu, Lizhi; Deng, Zechao; Ding, Xuecheng; Guan, Li

    2017-02-01

    We simulated the nucleation and growth of Si nanoparticles produced by pulse laser deposition using Monte Carlo method at the molecular (microscopic) level. In the model, the mechanism and thermodynamic conditions of nucleation and growth of Si nanoparticles were described. In a real physical scale of target-substrate configuration, the model was used to analyze the average size distribution of Si nanoparticles in argon ambient gas and the calculated results are in agreement with the experimental results.

  10. Pulsed laser deposition of epitaxial YBCO/oxide multilayers onto textured metallic substrates for coated conductor applications

    NASA Astrophysics Data System (ADS)

    Tomov, R. I.; Bramley, A. P.; Kursumovic, A.; Evetts, J. E.; Glowacki, B. A.; Tuissi, A.; Villa, E.

    2001-04-01

    The development of a viable HTS coated conductor technology requires the deposition of biaxially aligned Y1Ba2Cu3CuO7-y (YBCO) layers onto flexible metallic substrates. Using pulsed laser deposition (PLD) YBCO/CeO2/YSZ heterostructures have been deposited onto biaxially textured Ni and Ni-alloy substrates. The influence of the critical processing parameters on the texture is investigated and some of the issues involved in the deposition of heterostructures are discussed. The texture in the layers has been characterized using X-ray Diffraction (XRD). The as deposited architecture shows YBCO layers with biaxial alignment with XRD (omega) and (phi) scans having best FWHM values of 3.5 degrees and 11 degrees respectively. The growth of the layers has also been studied using Atomic Force Microscopy. Tc at 90 K with sharp transition ((Delta) equals 2K) have been measured.

  11. Pulsed Laser Deposition of Thin Films for Lasers and Quasi-Phase Matched Devices

    DTIC Science & Technology

    2013-01-16

    Optics , waveguides, Lasers 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18, NUMBER OF PAGES 11 19a. NAME OF...and AFRL, concerning PLD research  in general. The  offer has been made  for a current student to visit ARFL, and  interact over  multibeam  PLD

  12. Structure property relationships of nitride superlattice hard coatings prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Patel, Nitin

    Today, more than 40% of all cutting tools used in machining applications are covered with coatings. Coatings improve wear resistance, increase tool life, enable use at higher speed, and broaden the application range. Superlattices, where thin layers (typically <10 nm) of two different materials (e.g. TiN and AlN) are deposited in an alternating fashion, are widely used commercially. Importantly, the hardness value of a superlattice (e.g. TiN/AlN) can significantly exceed the rule of mixture value. Superlattice coatings built from crystallographically dissimilar materials are not widely studied but hold promise for improvements in performance by allowing for both hardness and toughness to be simultaneously optimized. This is what this thesis is concerned with: a structure-property comparison of isostructural superlattices with corresponding non-isostructural superlattices. In order to grow both isostructural and non-isostructural superlattices from the same set of materials, it is necessary to grow monolithic films in different phases. Towards this end, the synthesis of different phases of AlN, (Ti,Al)N, TaN, and TiN was investigated. Films were grown by pulsed laser deposition in two different chambers that had different base pressures to study the effect of background gases on the phases and orientations of the films. Growth of AlN and (Ti,Al)N films is strongly affected in a chamber that had a base pressure of 10-6 Torr, but the films adopt their stable nitride structures in a chamber with the lower base pressure of 10-8 Torr. TaN adopts either the cubic rock salt structure or its stable hexagonal structure, depending on the growth temperature, while TiN grows as rock salt in all conditions. Single crystal epitaxial superlattices were then grown with different compositions, periodicities, and crystallographic orientations to compare the effect of chemistry, nanostructure, and crystallographic texture on hardness. Finally, the structure-property relationships of

  13. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Smith, David J.; Ding, Ding; Lu, Xianfeng; Zhang, Yong-Hang

    2011-04-01

    Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

  14. Fabrication and properties of plasmonic crystalline thin film of titanium nitride (TiN) by pulsed laser deposition with Nd:YAG laser at 355 nm

    NASA Astrophysics Data System (ADS)

    Oshikane, Yasushi

    2016-09-01

    For efficient plasmonic MIM structures in fabrication of optical nano-probe tip for scanning near-field microscope (SNOM), an experimental study of thin film fabrication of titanium nitride (TiN) has been started by pulsed laser deposition (PLD) with 3rd harmonic (355nm) pulses of high-power Nd:YAG laser. Inside a TMP-pumped UHV chamber, a TiN powder sintered body has been irradiated with the UV laser pulses (3.3 nsFWHM, 10Hz, up to 340mJ/ pulse on target) at different intensities and incident angles. The deposited films on glass slide or silicon wafer has been analyzed by X-ray diffractometer (XRD), UV-Vis spectrophotometer, scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS). Previously-reported PLD fabrication experiments for TiN film used a titanium (Ti) target with several gas species including nitrogen. The laser-produced Ti plasma with an appropriate condition had a chemical reaction with nitrogen molecules, and the resultant TiN film was deposited on a substrate. While on the other hand, this study has significant features of (1) PLD target made of crystalline powder sintered body and (2) UV laser pulses having temporally-smoothed gaussian profile by injection-seeding of IR laser diode beam. The very first trial depositions have succeeded to fabricate flat and dense films of a few hundred nm, which were partly covered with debris and cracks. The resultant XRD pattern of film having luster of gold indicated several peaks including 42.6° (200) and 61.8° (220) which correspond to crystal structure of TiN. The electron configuration in the PLDed TiN film is studied using XPS.

  15. Pulsed laser deposition of PbTe under monopulse and multipulse regime

    NASA Astrophysics Data System (ADS)

    Alvira, F. C.; Cabrera, L. Ponce; Peñaloza Mendoza, Y.; Martinez Ricci, M. L.; Videla, F.

    2017-03-01

    The aim of this paper is to compare PLD technique with monopulse and multipulse nanosecond laser excitation. We show the feasibility of depositing nanometric layers of PbTe employing the regimes already mentioned. Each of the grown layers were characterized by XRD, EDXS, SEM, Spectroscopic Elipsometry, AFM and the thickness was measured by mechanic profilometry. We have conducted comparative experiments to show the advantages and drawbacks of making PLD with mono and multipulse nanosecond laser.

  16. Complex Dielectric Function of Amorphous Diamond Films Deposited by Pulsed Excimer (ArF) Laser Ablation of Graphite

    DTIC Science & Technology

    1993-05-01

    in a calculation of the local density of states of electrons by the recursion method revealed a smoothing of features and a shift of the leading edge...passing through a bandgap threshold and approaches a value of four at a sufficientl’ large energy. This is shown in Fig. 8. It is calculated from the...graphite (2.26 g/cm’). A similar value has been found for the films deposited by other methods such as filtered arc deposition, 8,41 pulsed laser

  17. CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature

    NASA Astrophysics Data System (ADS)

    de Moure-Flores, F.; Quiñones-Galván, J. G.; Guillén-Cervantes, A.; Arias-Cerón, J. S.; Hernández-Hernández, A.; Santoyo-Salazar, J.; Santos-Cruz, J.; Mayén-Hernández, S. A.; de la L. Olvera, M.; Mendoza-Álvarez, J. G.; Meléndez-Lira, M.; Contreras-Puente, G.

    2014-01-01

    CdTe thin films were deposited by pulsed laser deposition on Corning glass slides using CdTe powder as target. Films were grown at substrate temperatures ranging from room temperature (~25 °C) to 300 °C. The structural, compositional and optical properties were analyzed as a function of substrate temperature. X-ray diffraction shows that CdTe films grown at room temperature have hexagonal phase, while for higher temperatures the films have cubic phase. Raman and EDS indicate that films grew with Te excess, which suggests that CdTe films have p-type conductivity.

  18. The study on the effect of erbium on diamond-like carbon deposited by pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Foong, Y. M.; Hsieh, J.; Li, X.; Chua, D. H. C.

    2009-09-01

    Diamond-like carbon (DLC) films doped with a small fraction of erbium (0.5-2.0 at. %, at 0.5 at. % interval) were prepared by using a 248 nm KrF pulsed laser deposition technique. The effects of erbium on the surface morphology, microstructure, chemical binding states, tribological property, and the adhesion strength of DLC films were investigated. Atomic force microscopy showed that the surface roughness of the films increased with the increasing of erbium fraction, but generally the nanocomposite films were smooth with rms below 1 nm. Raman analysis showed broad peaks centered at 1550 cm-1 on all the samples. The deconvoluted Raman spectra on DLC doped with different fractions of erbium showed that the ID/IG ratio increased with increasing erbium content, and the comparative percent of sp3 is between 50% and 58% for erbium fraction between 0.5 and 2.0 at. %. High resolution x-ray photoelectron spectroscopy confirmed that the C 1s peaks had slightly shifted away from 285.2 (diamond) to 284.5 eV (graphite). The deconvolution of the spectra further confirmed the influence of erbium to the sp3 contents and revealed the presence of SiC with the increasing of Er fraction. Microscratch tester results showed that the adhesion strength (critical load) of the films improved with the presence of SiC bonding at the interface. This hinted that the presence of the heavier erbium may force the impinging carbon ions to react more with the interface to form silicon carbide bonds, thus enhancing the adhesion strength. Although the presence of erbium increased the surface roughness of the films, the coefficients of friction of the erbium doped DLC films were still closely resembled to pure DLC, i.e., 0.11-0.12 compared to 0.10 for pure DLC.

  19. Pulsed-laser deposition of ZnO and related compound thin films for optoelectronics

    NASA Astrophysics Data System (ADS)

    Millon, Eric; Perrière, Jacques; Tricot, Sylvain; Boulmer-Leborgne, Chantal

    2008-05-01

    ZnO is a wide and direct band-gap material (3.37 eV at room temperature) making this compound very suitable for UV photodetector applications as well as for UV and blue light emitting devices. As an electronic conductor, ZnO may be used as transparent and conducting electrodes for flat panel displays and solar cells. ZnO doped with various atoms can also lead to new or enhanced functional properties. For example, doping with Al, Ga, In, Si or H allows decreasing its resistivity to below 10-4 Ω.cm, while keeping the high optical transparency. Rare-earth doped ZnO thin films have been studied for optics and optoelectronics such as visible or infrared emitting devices, planar optical waveguide amplifiers. Ferromagnetic semiconductors can be obtained by doping ZnO with transition metal atoms (Mn, Co, Ni...) that could be used as spin injectors in spintronics. These new and exciting properties of pure and doped ZnO request the use of thin films or multilayer structures. ZnO thin film growth by pulsed-laser deposition (PLD) with or without any dopants or alloyed atoms has been intensively studied. In this paper, we will review the aspects of ZnO thin films grown by PLD, in order to prepare dense, stoichiometric and crystalline epitaxied ZnO layers or to form nanocrystalline films. Then, the optical and electrical properties will be discussed with a special emphasis on the growth conditions in relation to the physical properties for applications in p-n junctions, light emission devices, spintronics and bandgap tuning.

  20. Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices

    NASA Astrophysics Data System (ADS)

    Serhane, Rafik; Abdelli-Messaci, Samira; Lafane, Slimane; Khales, Hammouche; Aouimeur, Walid; Hassein-Bey, Abdelkadder; Boutkedjirt, Tarek

    2014-01-01

    Piezoelectric properties of ZnO thin films have been investigated for micro-electro-mechanical systems (MEMS). Wurtzite ZnO structure was prepared on different substrates (Si (1 0 0), Pt (1 1 1)/Ti/SiO2/Si and Al (1 1 1)/SiO2/Si) at different substrate temperatures (from 100 to 500 °C) by a pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for various piezoelectric applications. Scanning electron microscopy (SEM) showed evidence of honeycomb-like structure on the surface and columnar structure on the cross-section. In the case of ZnO on Al, ZnO exhibited an amorphous phase at the ZnO/Al interface. The XRD measurements indicated that the substrate temperature of 300 °C was the optimum condition to obtain high quality (strongest (0 0 2) peak with the biggest associated grain size) of crystalline ZnO on Pt and on Al and that 400 °C was the optimum one on Si. ZnO on Al exhibits smallest rocking curve width than on Pt, leading to better crystalline quality. The ZnO films were used in bulk acoustic wave (BAW) transducer. Electrical measurements of the input impedance and S-Parameters showed evidence of piezoelectric response. The electromechanical coupling coefficient was evaluated as Keff2    =    5 .0 9 %, with a quality factor Qr = 1001.4.

  1. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    SciTech Connect

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-08-01

    Thin films of Cu2Sb, prepared on stainless steel and copper substrates with a pulsed laser deposition technique at room temperature, have been evaluated as electrodes in lithium cells. The electrodes operate by a lithium insertion/copper extrusion reaction mechanism, the reversibility of which is superior when copper substrates are used, particularly when electrochemical cycling is restricted to the voltage range 0.65-1.4 V vs. Li/Li+. The superior performance of Cu2Sb films on copper is attributed to the more active participation of the extruded copper in the functioning of the electrode. The continual and extensive extrusion of copper on cycling the cells leads to the isolation of Li3Sb particles and a consequent formation of Sb. Improved cycling stability of both types of electrodes was obtained when cells were cycled between 0.65 and 1.4 V. A low-capacity lithium-ion cell with Cu2Sb and LiNi0.8Co0.15Al0.05O2 electrodes, laminated from powders, shows excellent cycling stability over the voltage range 3.15 - 2.2 V, the potential difference corresponding to approximately 0.65-1.4 V for the Cu2Sb electrode vs. Li/Li+. Chemical self-discharge of lithiated Cu2Sb electrodes by reaction with the electrolyte was severe when cells were allowed to relax on open circuit after reaching a lower voltage limit of 0.1 V. The solid electrolyte interphase (SEI) layer formed on Cu2Sb electrodes after cells had been cycled between 1.4 and 0.65 V vs. Li/Li+ was characterized by Fourier-transform infrared spectroscopy; the SEI layer contributes to the large irreversible capacity loss on the initial cycle of these cells. The data contribute to a better understanding of the electrochemical behavior of intermetallic electrodes in rechargeable lithium batteries.

  2. Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets

    NASA Astrophysics Data System (ADS)

    Inoue, Takeshi; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2015-11-01

    Epitaxial growth of SnSe was studied using pulsed laser deposition on three kinds of single-crystalline substrates, MgO (100), NaCl (100), and SrF2 (100), along with silica glass. For polycrystalline SnSe grown on glass, we found that a 20% Se-rich polycrystalline target is effective for obtaining stoichiometric SnSe films. The crystal structure of all the obtained films was the same as that of bulk SnSe, and the optimum temperatures for epitaxial growth were 400-500 °C, where the highest temperature was limited by re-evaporation. All the epitaxial films exhibited an a-axis orientation. For in-plane epitaxial structures, a quasi cube-on-cube heteroepitaxy was observed for MgO, whereas a 45°-rotated heteroepitaxy was observed for NaCl and SrF2, which can be explained by in-plane lattice matching. The anisotropic lattice mismatching and thermal expansion explain the compressive strain induced along the in-plane c-axis and the tensile strains along the in-plane b-axis and the out-of-plane a-axis. The epitaxial films on NaCl exhibited the best crystallinity, but the highest hole mobility of 60 cm2/(V s) was obtained on MgO. The indirect optical gap of the best films was determined to be 0.8 eV. Plausible interface models were proposed based on density functional calculations.

  3. Recovery of a chemical vapor deposited diamond detection system from strong pulses of laser produced x rays

    SciTech Connect

    Dauffy, L. S.; Koch, J. A.; Izumi, N.; Tommasini, R.

    2006-10-15

    We are planning an experiment that will study the response of a chemical vapor deposited (CVD) diamond detector to a strong x-ray pulse followed by a second weaker pulse arriving 50-300 ns later, with a contrast in amplitude of about 1000. These tests will be performed at the LLNL Jupiter laser facility and are intended to produce charge carrier densities similar to those expected during a DT implosion at the National Ignition Facility, where a large 14.1 MeV neutron pulse is followed by a weak downscattered neutron signal produced by slower 6-10 MeV neutrons. The areal density {rho}R is proportional to the number of downscattered neutrons. The challenge of measuring {rho}R resides consequently in the effects of the first strong pulse on the weaker later pulse, which may include the saturation of the diamond wafer, saturation of the oscilloscope, or saturation of the associated power and data acquisition electronics. We are presenting the preparation of a double pulse experiment that will use a system of three polycrystalline CVD diamond detectors irradiated by 8.6 keV x rays produced by two laser beams incident on a zinc target.

  4. Investigation of NbNx thin films and nanoparticles grown by pulsed laser deposition and thermal diffusion

    NASA Astrophysics Data System (ADS)

    Hassan Farha, Ashraf

    Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (lambda = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films. When the fabrication parameters are fixed, except for laser fluence, surface roughness, deposition rate, nitrogen content, and grain size increases with increasing laser fluence. Increasing nitrogen background pressure leads to change in the phase structure of the NbNx films from mixed -Nb 2N and cubic delta-NbN phases to single hexagonal beta- Nb 2N. A change in substrate temperature led to a pronounced change in the preferred orientation of the crystal structure, the phase transformation, surface roughness, and composition of the films. The structural, electronic, and nanomechanical properties of niobium nitride PLD deposited at different nitrogen pressures (26.7-66.7 Pa) on Si(100) were investigated. The NbNx, films exhibited a cubic delta-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The highly-textured delta-NbN films have a Tc up to 15.07 K. The film was deposited at a nitrogen background pressure of 66.7 Pa exhibited improved superconducting properties and showed higher hardness values as compared to films deposited at lower nitrogen pressures. NbN nanoclusters that were deposited on carbon coated Cu-grids using PLD at laser fluence of 8 J/cm2 were observed. Niobium nitride is prepared by heating of Nb sample in a reactive nitrogen atmosphere (133 Pa

  5. Investigation of variation of energy of laser beam on structural, electrical and optical properties of pulsed laser deposited CuO thin films

    SciTech Connect

    Dahiya, V. Kumar, A.; Kaur, G.; Mitra, A.

    2014-04-24

    In this paper, copper oxide (CuO) thin films have been deposited successfully by pulsed laser deposition technique using copper metal as target material. Thin films have been prepared under different energy of laser pulses ranging from 100mJ/pulse to 250 mJ/pulse. These films have been characterized for their structural, electrical and optical properties by using X-Ray Diffractometer (XRD), Four probe method and UV spectroscopy. Morphological and structural studies show that there is increase in crystallite size with the increase in energy of laser beam. Thus resulting in improved crystallinity and degree of orientation of the CuO thin films. Optoelectrical properties show direct relation between conductivity and energy of laser beam. Optical analysis of CuO thin films prepared under different energy of laser beam shows good agreement with structural analysis. The prepared CuO thin films show high absorbance in the UV and visible range and thus are suitable candidate for thin films solar cell application.

  6. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-02

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

  7. Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tabbal, M.; Mérel, P.; Chaker, M.

    We present an investigation of the effect of the process parameters, namely deposition pressure and laser intensity, on the growth and mechanical properties of carbon nitride (CNx) thin films synthesized by plasma assisted pulsed laser deposition. Deposition at high remote plasma pressure (200 mTorr) enhances both growth rate and nitrogen incorporation (up to 40 at.%), but nano-indentation measurements indicate that these films are very soft and have poor mechanical properties. At low remote plasma pressure (0.5 mTorr), the nitrogen content varies from 24 to 16 at.% with increasing laser intensity as the films become much harder and more elastic, with hardness and Young's modulus values reaching 24 GPa and 230 GPa, respectively. These effects are explained in terms of a thermalization of the laser plasma at 200 mTorr and indicate that plasma activation of nitrogen does not provide any particular benefit to the film properties when deposition is performed at high pressure. However, at low pressure, the benefit of plasma activation is evidenced through enhanced nitrogen incorporation in the films while preserving the highly energetic species in the ablation plume. Such conditions lead to the synthesis, at room temperature, of hard and elastic films having properties close to those of fullerene-like CNx.

  8. Catalyst-free ZnO nanowires on silicon by pulsed laser deposition with tunable density and aspect ratio

    NASA Astrophysics Data System (ADS)

    Susner, M. A.; Carnevale, S. D.; Kent, T. F.; Gerber, L. M.; Phillips, P. J.; Sumption, M. D.; Myers, R. C.

    2014-08-01

    ZnO nanostructures were grown on Si(1 1 1) via pulsed laser deposition. The morphology of the ZnO was tunable based on the pressure of the atmosphere during deposition: deposition in vacuum produced a thin film, deposition at intermediate pressures (75 mTorr) yielded nanoclusters of ZnO and deposition at higher pressures (>250 mTorr) produced c-axis oriented nanowires. Through variation of the deposition temperature and pressure it was possible to control the nanowire density, height, and diameter. Room temperature photoluminescence spectroscopy reveals exciton to defect peak ratios greater than 100 suggesting much greater stoichiometry and reduced defect density than found in catalyst-formed ZnO nanowires. The evolution of the ZnO nanowire growth was examined through X-ray diffraction and electron microscopy. Using a two-step deposition procedure involving depositing a seed layer at a low temperature with further deposition at a higher temperature we were able to increase the height of the nanowires without increasing the diameter. These two-step structures were seen to come in two morphological forms - ZnO needles and porous, nested ZnO nanostructures.

  9. Structure-Property Relationships in W Doped (Ba,Sr)TiO(3) Thin Films Deposited by Pulsed Laser Deposition on (001) MgO

    DTIC Science & Technology

    2003-04-03

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013347 TITLE: Structure-Property Relationships in W Doped [Ba,Sr]TiO[3... Doped (Ba,Sr)TiO 3 Thin Films Deposited by Pulsed Laser Deposition on (001) MgO N. Navi1’*, J.S. Horwitz, H.-D. Wu2 and S.B. Qadri, Naval Research...oscillators, delay lines and phase shifters [1]. These devices will reduce the size and the operating power of the current semiconducting and ferrite based

  10. Effect of ablation parameters on infrared pulsed laser deposition of poly(ethylene glycol) films

    NASA Astrophysics Data System (ADS)

    Bubb, Daniel M.; Papantonakis, M. R.; Toftmann, B.; Horwitz, J. S.; McGill, R. A.; Chrisey, D. B.; Haglund, R. F., Jr.

    2002-06-01

    Polymer thin films were deposited by laser ablation using infrared radiation both resonant (2.90, 3.40, 3.45, and 8.96 mum) and nonresonant (3.30, 3.92, and 4.17 mum) with vibrational modes in the starting material, polyethylene glycol. The chemical structure of the films was characterized by Fourier transform infrared spectroscopy, while the molecular weight distribution was investigated using gel permeation chromatography. The films deposited by resonant irradiation are superior to those deposited with nonresonant radiation with respect to both the chemical structure and the molecular weight distribution of the films. However, the molecular-weight distributions of films deposited at nonresonant infrared wavelengths show marked polymer fragmentation. Fluence and wavelength dependence studies show that the effects may be related to the degree of thermal confinement, and hence to the relative absorption strengths of the targeted vibrational modes.

  11. Synthesis of carbon films using pulsed laser deposition method with frozen CH 4 and CO 2 targets

    NASA Astrophysics Data System (ADS)

    Ishiguro, Takashi; Esaki, Kotaro; Hiroshima, Yasushi

    1998-05-01

    A novel pulsed laser deposition (PLD) process with frozen CH 4 and/or CO 2 is developed. Frozen CH 4 and/or CO 2 formed on the graphitic carbon (GC) target at 12 K, then co-ablated with the GC target, using a KrF excimer laser. The present method is effective in enhancing the dissociation of raw materials and suppressing the large splashing particles. The characteristics of the deposited carbon films depend on the target material and on the substrate temperature. Under the proper conditions, the films show the characteristics of diamond-like carbon in the Raman spectrum. According to the high resolution transmission electron microscopy, these films contain nanometer-sized diamond embryos.

  12. Moderation of near-field pressure over a supersonic flight model using laser-pulse energy deposition

    NASA Astrophysics Data System (ADS)

    Furukawa, D.; Aoki, Y.; Iwakawa, A.; Sasoh, A.

    2016-05-01

    The impact of a thermal bubble produced by energy deposition on the near-field pressure over a Mach 1.7 free-flight model was experimentally investigated using an aeroballistic range. A laser pulse from a transversely excited atmospheric (TEA) CO2 laser was sent into a test chamber with 68 kPa ambient pressure, focused 10 mm below the flight path of a conically nosed cylinder with a diameter of 10 mm. The pressure history, which was measured 150 mm below the flight path along the acoustic ray past the bubble, exhibited precursory pressure rise and round-off peak pressure, thereby demonstrating the proof-of-concept of sonic boom alleviation using energy deposition.

  13. Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Vyas, Sumit; Giri, Pushpa; Singh, Shaivalini; Chakrabarti, P.

    2015-10-01

    Zinc oxide (ZnO) thin films have been deposited on Si substrate and glass substrate using thermal evaporation, pulsed laser deposition (PLD) and radio-frequency (RF) sputtering methods. The structural, surface morphological, optical and electrical properties of ZnO thin films deposited by these three methods were investigated and compared systematically using x-ray diffractometer, atomic force microscopy, ellipsometric and current-voltage ( I- V) measurement. The ZnO films deposited by RF sputtering method were highly oriented along the (002) plane. The ZnO films grown by thermal evaporation and PLD methods exhibited a polycrystalline nature. The surface roughness was found to be the least and the transparency in the visible region was the highest for the films grown by the RF sputtering method as compared to the films grown by the other two methods. The I- V characteristics reveal that the Pd:Au/ZnO (RF-sputtered) Schottky contact exhibited a better value of ideality factor, series resistance and barrier height as compared to the values obtained for Pd:Au/ZnO (thermally evaporated and pulse laser-deposited) Schottky contacts. The optical bandgap was found to be almost the same for the films grown by all three methods and was estimated to be around 3.2 eV.

  14. Pulsed laser ablation and deposition of bioactive glass as coating material for biomedical applications

    NASA Astrophysics Data System (ADS)

    D'Alessio, L.; Teghil, R.; Zaccagnino, M.; Zaccardo, I.; Ferro, D.; Marotta, V.

    1999-01-01

    A study of the laser ablation and deposition, on Ti-Al substrates, of a biologically active glass (Bioglass®) suitable for bone implants is reported. The analysis of the gaseous phase by emission spectroscopy and the characterisation of the films from a compositional and morphological point of view have been carried out. The mean chemical composition of the deposits obtained from Bioglass ablation is very close to the target composition and the morphology indicates that different mechanisms of material ejection are present.

  15. Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

    NASA Astrophysics Data System (ADS)

    Kim, Se Jin

    Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

  16. Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

    2013-07-01

    Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

  17. Physical characterization of Ge films on polyethylene obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Giuffrida, L.; Torrisi, L.; Rosinski, M.; Caridi, F.; Cutroneo, M.

    2012-05-01

    A Nd:YAg laser, operating in fundamental wavelength at 1064 nm, is focused at an intensity of the order of 1010 W/cm2 to ablate a solid Ge target. A Laser Ion Source (LIS) system is employed to produce ion emission at high directionality, high current, high rate of production and high charge states. LIS is used to implant and/or to deposit Ge ions in polyethylene (UHMWPE). Mechanical (roughness, wetting ability and microhardness), optical (reflectivity and transmission) and electrical properties (resistivity) were investigated, in comparison to the pristine values, in order to reach understanding of the ion implantation/deposition effects as a function of the irradiation ion dose.

  18. Structural and electrochemical properties of W-Se-O layers prepared by pulsed laser pre-deposition and thermal posttreatment

    NASA Astrophysics Data System (ADS)

    Soloviev, A. A.; Grigoriev, S. N.; Fominski, D. V.; Volosova, M. A.; Romanov, R. I.

    2016-09-01

    Novel nanostructured thin-film coatings containing WSe2 and WO3 nanosheets were prepared through a simple and highly reproducible method. Pulsed laser pre-deposition of W- Se-O films on a microcrystalline graphite substrate by ablation of WSe2 target in a mixture of Ar and O2 gases was followed by thermal post-treatment. The influence of pre-deposition and post-treatment conditions on the structure, morphology and chemical composition of the W-Se- O films was studied. Thermal annealing at appropriate conditions of pre-deposited amorphous W-Se-O films resulted in the formation of crystalline structure consisted of nanocrystals of WSe2 and WO3 phases. Such structural modification significantly altered the electrochemical properties of the thin-film coatings with consequences, in particular, on their catalytic activity toward hydrogen evolution reaction in an acid solution.

  19. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Majid, S. S.; Shukla, D. K.; Rahman, F.; Choudhary, R. J.; Phase, D. M.

    2015-06-01

    We present here the structural and electrical properties of the thin films of V2O3 (Vanadium sesquioxide) and V5O9. Both these oxide phases, V2O3 and V5O9, have beenachieved on (001) orientedSi substrate using the V2O5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V2O3 and V5O9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V2O3 and V5O9.

  20. As-grown enhancement of spinodal decomposition in spinel cobalt ferrite thin films by Dynamic Aurora pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Debnath, Nipa; Kawaguchi, Takahiko; Kumasaka, Wataru; Das, Harinarayan; Shinozaki, Kazuo; Sakamoto, Naonori; Suzuki, Hisao; Wakiya, Naoki

    2017-06-01

    Cobalt ferrite CoxFe3-xO4 thin films with composition within the miscibility gap were grown using Dynamic Aurora pulsed laser deposition. X-ray diffraction patterns reveal as-grown phase separation to Fe-rich and Co-rich phases with no post-deposition annealing. The interconnected surface microstructure of thin film shows that this phase separation occurs through spinodal decomposition enhanced by magnetic-field-induced ion-impingement. The lattice parameter variation of the thin films with the magnetic field indicates that the composition fluctuations can be enhanced further by increasing the magnetic field. Results show that spinodal decomposition enhancement by magnetic-field-induced ion-impingement is independent of the lattice-mismatch-induced strain. This approach can promote spinodal decomposition in any thin film with no post-deposition annealing process.

  1. Growth of poly-crystalline Cu films on Y substrates by picosecond pulsed laser deposition for photocathode applications

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Klini, A.; Manousaki, A.; Perrone, A.; Fotakis, C.

    2015-11-01

    In this work, the deposition of Cu thin films on Y substrates for photocathode applications by pulsed laser deposition employing picosecond laser pulses is reported and compared with the use of nanosecond pulses. The influence of power density (6-50 GW/cm2) on the ablation of the target material, as well as on the properties of the resulting film, is discussed. The material transfer from the target to the substrate surface was found to be rather efficient, in comparison to nanosecond ablation, leading to the growth of films with high thickness. Scanning electron microscope analysis indicated a quasi-continuous film morphology, at low power density values, becoming granular with increasing power density. The structural investigation, through X-ray diffraction, revealed the poly-crystalline nature of the films, with a preferential growth along the (111) crystallographic orientation of Cu cubic network. Finally, energy-dispersive X-ray spectroscopy showed a low contamination level of the grown films, demonstrating the potential of a PLD technique for the fabrication of Cu/Y patterned structures, with applications in radiofrequency electron gun technology.

  2. Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding

    PubMed Central

    Wang, Ke; Wang, Hailin; Zhu, Guangzhi; Zhu, Xiao

    2017-01-01

    A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC), and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC) using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting. PMID:28772519

  3. Pulsed laser deposition and ferroelectric characterization of nanostructured perovskite lead zirconate titanate (52/48) thin films.

    PubMed

    Prabu, M; Banu, I B Shameem; Vijayaraghavan, G V; Gobalakrishnan, S; Chavali, Murthy

    2013-03-01

    Perovskite lead zirconate titanate nanostructured (PZT) thin films with Zr/Ti ratio of 52/48 were deposited on Pt/TiO2/SiO2/Si(100) substrate using pulsed laser deposition method. A metal/ ferroelectric/metal (MFM) structure was used for ferroelectric property measurements, formed by depositing gold electrode on top of the film. A Nd:YAG UV laser having a wavelength of 355 nm and an energy fluence of -2.7 J/cm2 was used to deposit the film. The film was deposited on platinum (Pt) coated silicon substrate at the substrate temperature of 600 degrees C and the base vacuum of 10(-6) mbar. The scanning electron microscopy (SEM) images revealed well-crystallized films with a fine microstructure and an average grain size of - 50 nm. The ferroelectric properties of the film were studied and the results were discussed. The voltage dependent Polarization versus Electric field hysteresis measurements of PZT (52/48) pellet showed a well-defined hysteresis loop with a fairly high remnant polarization (P(r)) and low coercive field (E(c)).

  4. Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass

    NASA Astrophysics Data System (ADS)

    Erlacher, A.; Ambrico, M.; Perna, G.; Schiavulli, L.; Ligonzo, T.; Jaeger, H.; Ullrich, B.

    2005-07-01

    Pulsed-laser deposition (PLD) of ZnTe was performed at λpld = 1064 nm and λpld = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness ≈2 μm) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed at λpld = 532 nm is amorphous, whereas the one ablated at λpld = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV.

  5. On-axis pulsed laser deposition of hybrid perovskite films for solar cell and broadband photo-sensor applications

    NASA Astrophysics Data System (ADS)

    Bansode, Umesh; Ogale, Satishchandra

    2017-04-01

    High quality hybrid perovskite films are grown by the pulsed laser deposition (PLD) process through target stoichiometry and gas ambient control in the commonly used on-axis geometry which is compatible with PLD of other materials such as metal oxides. The use of an off-stoichiometric target and a momentum softening gas mixture of argon and hydrogen (90%:10%) is shown to yield dense films in the on-axis geometry with excellent stoichiometry and optical quality. The band gap can be easily tuned from 1.6 to 2.3 eV with either mixed halide composite target or successive depositions of inter-diffusing MAPbBr3 and MAPbI3 layers. A photosensor based on PLD grown MAPbI3 is shown to render impressive performance over the broad range of wavelengths from 375 to 800 nm at a voltage of 5 V bias. A planar heterojunction solar cell based on the dry-processed on-axis PLD grown film exhibits a champion conversion efficiency of 10.9%. A heterostructure comprising in situ pulsed laser deposited Cu2O (p-type) followed by the hybrid perovskite film shows a rectifying characteristic and photoresponse.

  6. Pulsed laser-deposited MoS₂ thin films on W and Si: field emission and photoresponse studies.

    PubMed

    Late, Dattatray J; Shaikh, Parvez A; Khare, Ruchita; Kashid, Ranjit V; Chaudhary, Minakshi; More, Mahendra A; Ogale, Satishchandra B

    2014-09-24

    We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

  7. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  8. Ultrafast pulsed laser deposition of carbon nanostructures: Structural and optical characterization

    NASA Astrophysics Data System (ADS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Othonos, A.; Giapintzakis, J.

    2013-08-01

    Carbon nanostructured materials were obtained by high-repetition rate pulsed laser ablation of a graphite target using a train of 10-ps duration pulses at 1064 nm in different pressures of high-purity Ar gas. It is demonstrated that their microstructure and optical properties vary as a function of the argon pressure. High-resolution transmission electron microscopy revealed the existence of onion-like carbon nanostructures embedded in a matrix of amorphous carbon nanofoam for samples prepared at 300 Pa. In comparison samples prepared at 30 Pa show evidence of both onion-like and turbostratic carbon coexisting in a matrix of amorphous carbon nanofoam whereas samples prepared in vacuum are continuous films of amorphous carbon. Transient transmission spectroscopy measurements suggested that free carrier absorption is the dominant effect following photo-excitation for probing wavelengths in the range of 550-1000 nm and its magnitude varies among the materials investigated due to their different microstructures.

  9. Low Temperature, Self-nucleated Growth of Indium Tin Oxide Nanostructures by Pulsed Laser Deposition in Argon

    SciTech Connect

    Tan, S. S.; Lee, W. K.; Kee, Y. Y.; Wong, H. Y.; Tou, T. Y.

    2011-03-30

    Indium tin oxide (ITO) nanostructures were successfully deposited on glass substrate by pulsed laser ablation in argon gas at 250 deg. C. Microstructural changes were observed in the argon gas pressure between 30 to 50 mTorr. The as-grown, nanostructured ITO exhibit In{sub 2}O{sub 3} bixbyite structure orientated at <111> direction. At the initial stage of growth, there was a large number of nucleation sites detected which eventually evolved into needle-like branches. The presence of spheres at the tip of these branches indicates that these nanostructured ITO were likely governed by vapor-liquid-solid (VLS) growth mechanism.

  10. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pan, X. H.; Guo, W.; Ye, Z. Z.; Liu, B.; Che, Y.; He, H. P.; Pan, X. Q.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of SbZn-2VZn complex.

  11. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  12. Critical factor for epitaxial growth of cobalt-doped BaFe{sub 2}As{sub 2} films by pulsed laser deposition

    SciTech Connect

    Hiramatsu, Hidenori Kamiya, Toshio; Sato, Hikaru; Katase, Takayoshi; Hosono, Hideo

    2014-04-28

    We heteroepitaxially grew cobalt-doped BaFe{sub 2}As{sub 2} films on (La,Sr)(Al,Ta)O{sub 3} single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm{sup 2} irrespective of the laser wavelength.

  13. Q-switched operation of a pulsed-laser-deposited Yb:Y(2)O(3) waveguide using graphene as a saturable absorber.

    PubMed

    Choudhary, Amol; Dhingra, Shonali; D'Urso, Brian; Parsonage, Tina L; Sloyan, Katherine A; Eason, Robert W; Shepherd, David P

    2014-08-01

    The first, to the best of our knowledge, Q-switched operation of a pulsed-laser-deposited waveguide laser is presented. A clad Yb:Y(2)O(3) waveguide was Q-switched using an output coupling mirror coated with a single layer of graphene deposited by atmospheric pressure chemical vapor deposition. During continuous-wave operation, a maximum power of 83 mW at a slope efficiency of 25% was obtained. During Q-switched operation, pulses as short as 98 ns were obtained at a repetition rate of 1.04 MHz and a central wavelength of 1030.8 nm.

  14. Humidity sensors applicative characteristics of granularized and porous Bi2O3 thin films prepared by oxygen plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tudorache, Florin; Petrila, Iulian; Condurache-Bota, Simona; Constantinescu, Catalin; Praisler, Mirela

    2015-01-01

    Pulsed laser ablation of pure bismuth targets in a plasma discharge followed by thermal treatment as preparation method for humidity high-sensitive bismuth trioxide thin films deposited onto Si/Pt substrates were analyzed. Several thin films were deposited at different substrate temperatures during the pulsed laser deposition namely between 300 °C and 600 °C. Near to the electrical investigation, the structure and the morphology of the films as keys features for water adsorption are thoroughly investigated and correlated with their sensitivity as humidity sensors. Thus, it has been found that strong granularized Bi2O3 thin films obtained through oxygen plasma-assisted pulsed laser deposition onto Si/Pt substrate at 500 °C provide the most interesting humidity sensing characteristics.

  15. Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas

    NASA Astrophysics Data System (ADS)

    Fominski, V. Yu.; Grigoriev, S. N.; Gnedovets, A. G.; Romanov, R. I.; Volosova, M. A.

    2015-01-01

    Shadow-masked pulsed laser deposition (SMPLD) enables the preparation of films that contain none of the droplets that are normally formed in laser irradiation of the target. The platinum (Pt) film produced by SMPLD was studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford backscattering spectroscopy (RBS) of helium ions. The film thickness distribution across the substrate surface took the shape of a simple crater, and the film thickness on the crated "bottom" (center of the shadow area) was approximately 5 times less than that on the "mound" (edge of the shadow area). Monte Carlo collision (MCC) modeling of the laser plume movement during SMPLD was performed to clarify the role of the mask in the formation of the Pt films. The dynamics of the Pt atoms in the laser plume was studied using the vacuum deposition method through a narrow slit onto a rapidly displaced substrate, augmented by RBS measurements of the deposited film thickness along the substrate movement direction. The ionic flux was specifically measured using an ion probe. MCC simulation allowed the changes in the basic parameters of the deposited atom stream to be evaluated with the use of a mask. Comparison of the experimental and calculated distribution of the Pt film indicated that the best correlation was observed using the interpenetration model of the plume and buffer gas (argon, Ar) accompanied by elastic collisions of Pt atoms with the Ar atoms using the variable hard sphere model. Atomic flux models were utilized to imitate the growth of individual Pt crystals using the kinetic Monte Carlo method. In the SMPLD case, the root mean square roughness of the model crystal surface increased by ∼10% and the concentration of vacancies increased by ∼4% compared with the model crystal obtained by pulsed laser deposition (PLD). The surface topography of the experimental Pt films was defined by the nanocrystal nature of their structure. The use of a mask

  16. C{sub 2} and CN dynamics and pulsed laser deposition of CN{sub x} films

    SciTech Connect

    Kushwaha, Archana; Mohanta, Antaryami; Thareja, Raj K.

    2009-02-15

    The time-resolved optical emission studies of laser ablated carbon plasma in nitrogen ambient are carried out to understand the dynamic of formation of C{sub 2} and CN for depositing quality thin films. An optimum formation of C{sub 2} is observed at 3 mm from the target surface and 350 ns after the initiation of plasma. However, CN is formed at comparatively larger distance, 4 mm, and larger delay (850 ns). The expanding plasma plume splits/bifurcates into slow and fast moving two distinct components, with the faster components further splitting up at later times (>350 ns) into two components. The estimated plume front velocity from plume imaging in the nitrogen ambient of 1.2 mbars at a delay of 100 ns is 3.8x10{sup 6} cm/s, consistent with spectroscopic measurement {approx}3.0x10{sup 6} cm/s. The CN{sub x} thin films deposited by pulsed laser deposition technique are characterized by x-ray diffraction, atomic force microscopy, and Raman spectroscopy. The high I{sub D}/I{sub G} ratio and peak position shift of G band to lower values in the films deposited for longer time indicates the high incorporation of nitrogen and increasing CN concentration within the film.

  17. Pulsed Laser Deposition of Bi2Te3-Based Thermoelectric Thin Films

    SciTech Connect

    Makala, Raghuveer; Jagannadham, K.; Sales, Brian C

    2003-01-01

    Thin films of p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}, n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3}, and n-type (Bi{sub 2}Te{sub 3}){sub 90}(Sb{sub 2}Te{sub 3}){sub 5}(Sb{sub 2}Se{sub 3}){sub 5} (with 0.13 wt % SbI{sub 3}) were deposited on substrates of mica and aluminum nitride (on silicon) using pulsed laser ablation at substrate temperatures between 300 C to 500 C. The films were characterized using x-ray diffraction and transmission electron microscopy for crystalline quality and epitaxial growth on the substrates. The surface morphology and microstructure were examined using scanning electron microscopy. X-ray mapping and energy-dispersive spectroscopy were performed to determine nonstoichiometry in the composition and homogeneity. The quality of the films, in terms of stoichiometric composition and crystal perfection, was studied as a function of growth temperature and laser fluence. The values of the Seebeck coefficient, electrical resistivity, and Hall mobility in the thin films were measured and compared with those in the bulk. Thermoelectric figure of merit of the films was evaluated from the measured parameters. Correlation of the thermoelectric properties, with the crystalline quality and stoichiometric composition of the films, showed the advantages of pulsed laser deposition of the multicomponent thermoelectric thin films. The results illustrate that laser physical vapor deposition is a suitable choice for deposition of multicomponent thermoelectric films. However, optimization of target composition, substrate temperature, and annealing of the films after deposition were found necessary to maintain the desired stoichiometry and low defect density. AlN/Si substrates provided better quality films compared to substrates of mica. Poor adhesion and cracking of the films on mica were found to be detrimental factors. Films deposited on AlN/Si substrates were found to show higher carrier mobility and higher values of Seebeck coefficient.

  18. Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

    SciTech Connect

    Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh

    2015-05-01

    We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

  19. Large third-order optical nonlinearities in iron oxide thin films synthesized by reactive pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mulenko, S. A.; Rudenko, V. I.; Liakhovetskyi, V. R.; Brodin, A. M.; Stefan, N.

    2016-10-01

    We report on a study of the third-order nonlinear optical properties of Fe2O3 thin films, grown by the method of laser deposition on silica (SiO2) substrates. The films were synthesized on substrates at different temperatures (293 K and 800 K) and under different oxygen pressures (0.1 Pa, 0.5 Pa, 1.0 Pa). The resulting films were amorphous, if grown on cold substrates (293 K), or polycrystalline otherwise. The third-order optical susceptibility χ(3) of the films was determined by the Z-scan method at the wavelengths of 1064 nm and 532 nm and the laser pulse width of 20 ns. Remarkably high χ(3) values on the order of 10-4 esu at 1064 nm are obtained. The results show that Fe2O3 thin films are promising nonlinear materials for contemporary optoelectronics.

  20. Investigation of the nonlocal nonlinear optical response of copper nanostructured thin films prepared by pulsed laser deposition

    SciTech Connect

    Farmanfarmaei, B; RashidianVaziri, M R; Hajiesmaeilbaigi, F

    2014-11-30

    Nanostructured copper thin films have been prepared using the pulsed laser deposition method. Optical absorption spectra of these films exhibit plasmonic absorption peaks around 619 nm, which suggests the formation of copper nanoparticles on their surfaces. Scanning electron micrographs of the films confirm the nanoparticle formation on the films surfaces. After laser beam passing through the thin films, the observed diffraction rings on a far-field screen have been recorded. Despite the smallness of the maximal axial phase shifts of the films, which have been obtained using the nonlocal z-scan theory, a series of low-intensity rings can be observed on the far field screen for some specific positions of the thin films from the focal point. It is shown that the best approach to determining the sign and magnitude of the nonlinear refractive index of thin samples is the application of the conventional closeaperture z-scan method. (nanostructures)

  1. Structure and composition of layers of Ni-Co-Mn-In Heusler alloys obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wisz, Grzegorz; Sagan, Piotr; Stefaniuk, Ireneusz; Cieniek, Bogumil; Maziarz, Wojciech; Kuzma, Marian

    2016-12-01

    In present work we were analysing thin layers of Ni-Co-Mn-In alloys, grown by pulsed laser deposition method (PLD) on Si, NaCl and glass substrates. For target ablation the second harmonics of YAG:Nd3+ laser was used. The target had the composition Ni45Co5Mn34.5In14.5. The morphology of the layers and composition were studied by electron microscopy TESCAN Vega3 equipped with microanalyzer EDS - Easy EdX system working with Esprit Bruker software. The X-ray diffraction measurements (XRD), performed on spectrometer Bruker XRD D8 Advance system, reveals Ni2-Mn-In cubic phase having lattice constant a = 6.02Å.

  2. Spatially-offset double-pulse laser-induced breakdown spectroscopy: A novel technique for analysis of thin deposited layers

    NASA Astrophysics Data System (ADS)

    Nishijima, D.; Hollmann, E. M.; Doerner, R. P.

    2016-10-01

    A novel technique, spatially-offset double-pulse laser-induced breakdown spectroscopy (SODP-LIBS), is invented for analysis of thin layers. In this technique, two laser spots are spatially offset by a few mm, while there is no spatial gap for the standard collinear DP-LIBS. It is demonstrated from analysis of thin W layers (∼30-250 nm thickness) deposited on Mo substrates at a reduced ambient pressure of ∼ 5 × 10-3 Torr that (1) the W I signal intensity is enhanced with SODP-LIBS and (2) a clearer transition between W and Mo is obtained with SODP-LIBS, compared to the standard DP-LIBS.

  3. Low temperature synthesis of hierarchical TiO2 nanostructures for high performance perovskite solar cells by pulsed laser deposition.

    PubMed

    Yang, Bin; Mahjouri-Samani, Masoud; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2016-10-21

    A promising way to advance perovskite solar cells is to improve the quality of the electron transport material -e.g., titanium dioxide (TiO2) - in a direction that increases electron transport and extraction. Although dense TiO2 films are easily grown in solution, efficient electron extraction suffers due to a lack of interfacial contact area with the perovskites. Conversely, mesoporous films do offer high surface-area-to-volume ratios, thereby promoting efficient electron extraction, but their morphology is relatively difficult to control via conventional solution synthesis methods. Here, a pulsed laser deposition method was used to assemble TiO2 nanoparticles into TiO2 hierarchical architectures exhibiting an anatase crystal structure, and prototype solar cells employing these structures yielded power conversion efficiencies of ∼14%. Our approach demonstrates a way to grow high aspect-ratio TiO2 nanostructures for improved interfacial contact between TiO2 and perovskite materials, leading to high electron-hole pair separation and electron extraction efficiencies for superior photovoltaic performance. Compared to previous pulsed laser deposition-synthesized TiO2 mesoporous crystalline networks that needed post-thermal annealing at 500 °C to form mesoporous crystalline networks, our relatively low temperature (300 °C) TiO2 processing method may promote reduced energy-consumption during device fabrication, as well as enable compatibility with flexible polymer substrates such as polyimide.

  4. Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

    Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

  5. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  6. Pulsed laser deposition synthesis of superconducting (Cu, C)Ba 2CuO x thin films

    NASA Astrophysics Data System (ADS)

    Kikunaga, K.; Yamamoto, T.; Tanaka, Y.; Kikuchi, N.; Tokiwa, K.; Watanabe, T.; Terada, N.

    2010-11-01

    (Cu, C)-Ba-O thin films have been deposited at low growth temperature of 450-570 °C by pulsed laser deposition method. A control of CO 2 gas pressure and the growth temperature, usage of BaCu yO x pellet target resulted in an expansion of twice c-axis length of BaCuO 2 structure (2c phase) and a significant rise of conductivity. Measurements of in-situ XPS suggest that the 2c phase should be (Cu, C)Ba 2CuO x [(Cu, C)-1201]. The maximum temperature of onset of the superconducting transition and zero resistance state obtained so far were 60 and 47 K, respectively.

  7. Sapphire substrate-induced effects in VO2 thin films grown by oxygen plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Skuza, J. R.; Scott, D. W.; Pradhan, A. K.

    2015-11-01

    We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications.

  8. Formation and destruction of cube texture in MgO films using ion beam assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hühne, Ruben; Beyer, Christoph; Holzapfel, Bernhard; Oertel, Carl-Georg; Schultz, Ludwig; Skrotzki, Werner

    2001-07-01

    Biaxially textured MgO thin films were deposited on amorphous substrates using ion beam assisted pulsed laser deposition. The development of the texture and microstructure was investigated with electron diffraction and atomic force microscopy. After the first few nanometers of growth, a sharp nucleation texture is observed. During further growth a texture change takes place, leading to two texture components, one in the <220> direction and the other in the <111> direction parallel to the substrate normal. In both cases the <200> direction is parallel to the ion beam. This texture change can be explained in terms of the highly anisotropic sputter rate observed in experiments on single crystals, leading to grains having a <200> direction parallel to the ion beam during growth being preferred. Without ion beam assistance during further growth, one of the two texture components dominates.

  9. Induced magnetic anisotropy and spin polarization in pulsed laser-deposited Co2MnSb thin films

    NASA Astrophysics Data System (ADS)

    Paudel, Moti R.; Wolfe, Christopher S.; Pathak, Arjun K.; Dubenko, Igor; Ali, Naushad; Osofsky, M. S.; Prestigiacomo, Joseph C.; Stadler, Shane

    2012-01-01

    Co2MnSb thin films were grown on glass and GaAs (001) substrates using pulsed laser deposition. The films were grown in magnetic fields (HG = 500 Oe and 0 Oe) that were applied in the plane of the substrate during the deposition process. Angle-dependent magneto-optic Kerr effect measurements for films grown on glass revealed a uniaxial magnetic anisotropy in the direction of the applied growth field. Films grown on GaAs (001) exhibited more complicated magnetic anisotropy behavior, due to additional contributions from the substrate. Point contact Andreév reflection spectroscopy measurements indicated that the spin polarizations of the films were about P ˜ 50%, with negligible difference between films grown in zero and non-zero applied fields.

  10. Pulsed laser deposition of epitaxial YBCO/oxide multilayers onto textured metallic substrates for coated conductor applications

    NASA Astrophysics Data System (ADS)

    Tomov, R. I.; Kursumovic, A.; Kang, D. J.; Glowacki, B. A.; Majoros, M.; Evetts, J. E.; Tuissi, A.; Villa, E.

    2002-08-01

    Pulsed laser deposition of different CeO 2 based buffer architectures have been performed onto biaxially textured Ni-based substrates. The potential of both industrially available low-oxygen resistant magnetic. NiFe and NiCrW substrates have been explored. An attempt to reveal the influence CeO 2 target doping and processing environment (vacuum or forming gas) on the formation of NiO as well as in-plane and out-of-plane orientation of the first buffer has been made. XRD has been used for layer texture characterisation. As-deposited YBCO layers were highly aligned on both types of substrate with out-of-plane and in-plane ω and ϕ scans having best FWHM values of 4° and 10° respectively. The quality of YBCO tapes as full-coated conductors or seeds for high-rate epitaxial growth by LPE is evaluated.

  11. Effect of oxygen content on piezoresistivity of indium tin oxide thin films prepared by pulsed laser deposition

    SciTech Connect

    Fang, H.; Miller, T.; Rogers, B.R.; Magruder, R.H. III; Weller, R.A.

    2005-04-15

    The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of the O-to-(In+Sn) atom ratio. The oxygen-to-metal atom ratio was determined through Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses. Gauge factors, defined as the fractional change of the film resistance to the applied strain, increase with the film's oxygen content. The deposition under 50 mTorr oxygen pressure resulted in the film with the largest oxygen-to-metal atom ratio, 1.92, and a gauge factor of -14.5. A model based on hopping conduction is proposed. Results from this model are consistent with the sign and magnitude of the observed gauge factors.

  12. Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ran, Fan-Yong; Xiao, Zewen; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2014-02-01

    SnS epitaxial films were grown on MgO (100) substrates by pulsed laser deposition using a H2S gas as an S source. High growth temperature and high H2S gas flow rate caused re-evaporation and etching of the deposited films; therefore, the optimum condition was limited to a narrow region around 400 °C. The measured bandgap 1.08 eV is consistent with the previously reported theoretical calculation. The films with a S/Sn ratio of ˜1.0 showed the largest mobility of ˜37 cm2/(Vs). The hole transport was dominated by domain boundary potential barriers ˜0.05 eV in height.

  13. Enhancing the photoelectrochemical response of TiO2 nanotubes through their nanodecoration by pulsed-laser-deposited Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Trabelsi, K.; Hajjaji, A.; Gaidi, M.; Bessais, B.; El Khakani, M. A.

    2017-08-01

    We report on the pulsed laser deposition (PLD) based nanodecoration of titanium dioxide (TiO2) nanotube arrays (NTAs) by Ag nanoparticles (NPs). We focus here on the investigation of the effect of the number of laser ablation pulses (NLP) of the silver target on both the average size of the Ag-NPs and the photoelectrochemical conversion efficiency of the Ag-NP decorated TiO2-NT based photoanodes. By varying the NLP, we were able to not only control the size of the PLD-deposited Ag nanoparticles from 20 to ˜50 nm, but also to increase concomitantly the surface coverage of the TiO2 NTAs by Ag-NPs. The red-shifting of the surface plasmon resonance peak of the PLD-deposited Ag-NPs deposited onto quartz substrates confirmed the increase of their size as the NLP is increased from 500 to 10 000. By investigating the photo-electrochemical properties of Ag-NP decorated TiO2-NTAs, by means of linear sweep cyclic voltammetry under UV-Vis illumination, we found that the generated photocurrent is sensitive to the size of the Ag-NPs and reaches a maximum value at NLP =500 (i.e.,; Ag-NP size of ˜20 nm). For NLP = 500, the photoconversion efficiency of the Ag-NP decorated TiO2-NTAs is shown to reach a maximum of 4.5% (at 0.5 V vs Ag/AgCl). The photocurrent enhancement of Ag-NP decorated TiO2-NTAs is believed to result from the additional light harvesting enabled by the ability of Ag-NPs to absorb visible irradiation caused by various localized surface plasmon resonances, which in turn depend on the size and interdistance of the Ag nanoparticles.

  14. An experimental investigation of localised surface plasmon resonance (LSPR) for Cu nanoparticles depending as a function of laser pulse number in Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Gezgin, Serap Yiǧit; Kepceoǧlu, Abdullah; Kılıç, Hamdi Şükür

    2017-02-01

    Copper is a low cost metal and its nanoparticles have a unique optical properties such as LSPR. The location of LSPR wavelength can be tuned by controlling nanoparticles sizes and size distributions of nanoparticles, shapes and interparticle distances. This morphological changes are provided by controlling system parameters in PLD. For this work, 48000 and 36000 laser pulses from Nd:YAG laser were applied to produce Cu nanoparticle thin films. These thin films were characterised by performing UV-VIS absorption spectroscopy, Atomic Force Microscopy (AFM) analysis. When the number of laser pulse decreases, the size of Cu nanoparticles and the number of nanoparticles arriving on the substrate are reduced, and LSPR peak of thin films are red shifted depending on the geometrical shapes of the Cu nanoparticles. We have driven a conclusion in this work that LSPR properties of Cu nanoparticles can be tuned by proposed method.

  15. In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

    NASA Technical Reports Server (NTRS)

    Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

    2004-01-01

    The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

  16. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region.

    PubMed

    Fang, Xu; Mak, C L; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-08

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  17. In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

    NASA Technical Reports Server (NTRS)

    Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

    2004-01-01

    The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

  18. Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Zhu, Pei-ran; S, Yamamoto; A, Miyashita; H, Naramoto

    1998-12-01

    Thin films of VO2 single-crystalline on (0001) sapphire substrates have been prepared by visible pulsed laser ablation technique. The crystal quality and properties of the films are evaluated through electrical resistance measurement, x-ray diffraction (XRD), and Rutherford-backscattering spectroscopy/channeling (RBS/C) analysis. The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7 × 103-2 × 104. The hysteresis widths are from less than 1 to 3 K. XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO2 with the (010) planes parallel to the surface of the sapphire substrate.

  19. Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Virt, I. S.; Rudyi, I. O.; Lopatynskyi, I. Ye.; Dubov, Yu.; Tur, Y.; Lusakowska, E.; Luka, G.

    2017-01-01

    Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

  20. Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Golalikhani, M.; Lei, Q. Y.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.; Xi, X. X.

    2013-07-01

    We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (θ-2θ scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10-2 Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures.

  1. Industrially scaled pulsed laser deposition based coating techniques for the realization of hemocompatible surfaces for blood contact applications

    NASA Astrophysics Data System (ADS)

    Lackner, Juergen M.; Waldhauser, Wolfgang; Major, Roman; Major, Boguslaw; Czarnowska, Elzbieta; Bruckert, Franz

    2008-05-01

    Non-thrombogenic blood contacting surfaces and appropriate blood flow characteristics are essential for clinical application. State-of-the-art coatings are based on heparin and struggle with the problem of bleeding. Thus, there is increasing demand for developing new coating materials for improved human body acceptance. Materials deposited by vacuum coating techniques would be an excellent alternative if the coating temperatures can be kept low due to the applied substrate materials of low temperature resistance (mostly polymers). Under these circumstances, adequate film structure and high adhesion can be reached by the Pulsed Laser Deposition at room temperature (RT-PLD), which was developed to an industrial-scaled process at Laser Center Leoben. This process was applied to deposit Ti, TiN, TiCN and diamond-like carbon (DLC) on polyurethane, titanium and silicon substrates to study the biological interactions to blood cells and the kinetic mechanism of eukaryote cell attachment. Besides high biological acceptance, distinct differences for the critical delamination shear stress were found for the coatings, indicating higher adhesion at higher carbon contents.

  2. Pulsed laser deposition of La1-xSrxMnO3: thin-film properties and spintronic applications

    NASA Astrophysics Data System (ADS)

    Majumdar, Sayani; van Dijken, Sebastiaan

    2014-01-01

    Materials engineering on the nanoscale by precise control of growth parameters can lead to many unusual and fascinating physical properties. The development of pulsed laser deposition (PLD) 25 years ago has enabled atomistic control of thin films and interfaces and as such it has contributed significantly to advances in fundamental material science. One application area is the research field of spintronics, which requires optimized nanomaterials for the generation and transport of spin-polarized carriers. The mixed-valence manganite La1-xSrxMnO3 (LSMO) is an interesting material for spintronics due to its intrinsic magnetoresistance properties, electric-field tunable metal-insulator transitions, and half-metallic band structure. Studies on LSMO thin-film growth by PLD show that the deposition temperature, oxygen pressure, laser fluence, strain due to substrate-film lattice mismatch and post-deposition annealing conditions significantly influence the magnetic and electrical transport properties of LSMO. For spintronic structures, robust ferromagnetic exchange interactions and metallic conductivity are desirable properties. In this paper, we review the physics of LSMO thin films and the important role that PLD played in advancing the field of LSMO-based spintronics. Some specific application areas including magnetic tunnel junctions, multiferroic tunnel junctions and organic spintronic devices are highlighted, and the advantages, drawbacks and opportunities of PLD-grown LSMO for next-generation spintronic devices are discussed.

  3. Pulsed IR inductive lasers

    NASA Astrophysics Data System (ADS)

    Razhev, A. M.; Churkin, D. S.; Kargapol'tsev, E. S.

    2014-07-01

    Pulsed inductive discharge is a new alternative method of pumping active gas laser media. The work presents results of experimental investigations of near, mid, and far IR inductive gas lasers (H2, HF, and CO2) operating at different transitions of atoms and molecules with different mechanisms of formation of inversion population. The excitation systems of a pulsed inductive cylindrical discharge (pulsed inductively coupled plasma) and pulsed RF inductive discharge in the gases are developed. Various gas mixtures including H2, N2, He, Ne, F2, NF3, and SF6 are used. Characteristics of near IR H2 laser radiation are investigated. Maximal pulse peak power of 7 kW is achieved. The possibility of using a pulsed inductive discharge as a new method of pumping HF laser active medium is demonstrated. The pulsed RF inductive CO2 laser is created and a total efficiency of 17% is achieved.

  4. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    NASA Astrophysics Data System (ADS)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  5. Comparison of charge transport studies of chemical solution and pulsed laser deposited manganite-based thin film devices

    NASA Astrophysics Data System (ADS)

    Rathod, K. N.; Dhruv, Davit; Gadani, Keval; Boricha, Hetal; Solanki, Sapana; Joshi, A. D.; Pandya, D. D.; Asokan, K.; Solanki, P. S.; Shah, N. A.

    2017-08-01

    The electrical transport properties of manganites play a significant role in the diverse applications of spintronics. In this communication, we report the variation in the electrical transport properties of Y0.95Ca0.05MnO3 (YCMO) films deposited on (100) single crystalline Si substrates by two different deposition techniques: chemical solution deposition (CSD) and pulsed laser deposition (PLD). The charge conduction mechanisms responsible for the electrical transport properties of these films have been studied across the YCMO/Si junctions using temperature-dependent current-voltage ( I- V) and resistance-voltage characteristics and results have been compared for both the devices fabricated by CSD and PLD techniques. The role of structural strain and space charge limited conduction (SCLC) processes has been discussed to understand the results of I- V and electroresistance (ER) behavior across the junctions. The CSD grown films exhibits better electrical transport properties at the junction, i.e., high current across the junction, low junction resistance and large ER, and this has been discussed in detail on the basis of low structural strain present at the interface.

  6. Effects of substrate temperature on properties of NbNx films grown on Nb by pulsed laser deposition

    SciTech Connect

    Ashraf Hassan Farha, Ali Oguz Er, Yüksel Ufuktepe, Ganapati Myneni, Hani E. Elsayed-Ali

    2011-12-01

    NbN{sub x} films were deposited on Nb substrate using pulsed laser deposition. The effects of substrate deposition temperature, from room temperature to 950 C, on the preferred orientation, phase, and surface properties of NbN{sub x} films were studied by X-ray diffraction, atomic force microscopy, and electron probe micro analyzer. We find that the substrate temperature is a critical factor in determining the phase of the NbN{sub x} films. For a substrate temperature up to 450 C the film showed poor crystalline quality. With temperature increase the film became textured and for a substrate temperature of 650-850 C, mix of cubic {delta}-NbN and hexagonal phases ({beta}-Nb{sub 2}N + {delta}'-NbN) were formed. Films with a mainly {beta}-Nb{sub 2}N hexagonal phase were obtained at deposition temperature above 850 C. The c/a ratio of {beta}-Nb{sub 2}N hexagonal shows an increase with increased nitrogen content. The surface roughness of the NbN{sub x} films increased as the temperature was raised from 450 to 850 C.

  7. Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Emani, Sivanagi Reddy; Joseph, Andrews; Raju, K. C. James

    2016-05-01

    Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.

  8. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition

    SciTech Connect

    Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; Gorman, Brian P.; Ndione, Paul F.; Ginley, David S.

    2016-11-21

    Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

  9. Laser pulse stacking method

    DOEpatents

    Moses, Edward I.

    1992-01-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter.

  10. Laser pulse stacking method

    DOEpatents

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  11. Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control

    NASA Astrophysics Data System (ADS)

    Hotta, Yasushi; Ueoka, Satoshi; Yoshida, Haruhiko; Arafune, Koji; Ogura, Atsushi; Satoh, Shin-ichi

    2016-10-01

    We investigated the room temperature growth of HfO2 layers on Si substrates by pulsed laser deposition under ultra-high vacuum conditions. The laser fluence (LF) during HfO2 layer growth was varied as a growth parameter in the experiments. X-ray photoemission spectroscopy (XPS) was used to observe the interface chemical states of the HfO2/Si samples produced by various LFs. The XPS results indicated that an interface Hf-silicate layer formed, even at room temperature, and that the thickness of this layer increased with increasing pulsed LF. Additionally, Hf-Si bonds were increasingly formed at the interface when the LF was more than 2 J/cm2. This bond formation process was related to decomposition of HfO2 to its atomic states of Hf and O by multiphoton photochemical processes for bandgap excitation of the HfO2 polycrystalline target. However, the Hf-Si bond content of the interface Hf-silicate layer is controllable under high LF conditions. The results presented here represent a practical contribution to the development of room temperature processing of Hf-compound based devices.

  12. Mechanical and tribological characterization of tetrahedral diamond-like carbon deposited by femtosecond pulsed laser deposition on pre-treated orthopaedic biomaterials

    NASA Astrophysics Data System (ADS)

    Loir, A.-S.; Garrelie, F.; Donnet, C.; Subtil, J.-L.; Belin, M.; Forest, B.; Rogemond, F.; Laporte, P.

    2005-07-01

    Femtosecond pulsed laser deposition (PLD) has been performed using a mode-locked Ti:sapphire laser including an amplification stage (150 fs, 800 nm, 1 kHz) to deposit tetrahedral-amorphous carbon films (ta-C) on AISI 316L stainless steel and ultra high molecular weight polyethylene, in perspective to extend the wear resistance of materials used in hip joints. Ta-C films have been elaborated in high vacuum conditions at room temperature. The diamond-like coated silicon substrates exhibit high wear resistance (in the 10 -8-10 -9 mm 3 (N m) -1 range) with moderate hardness (in the 20-30 GPa range), which may be favorable for the accommodation motion between contacting surfaces in a hip joint. In situ sputter cleaning of the orthopaedic substrates in argon plasma prior to carbon deposition has been investigated, leading to the enhancement of the adhesion of the films onto the stainless steel substrates. The adhesion properties of films deposited in various conditions on metallic substrates have been studied by tensile tests. The tribological behavior of the coatings deposited on cleaned substrates have been widely investigated in a pin-on-flat configuration in ambient air and Ringer solution. Finally, a DLC thin film with an homogeneous thickness has been deposited on hemispherical surface of 22.2 mm in diameter of a stainless steel femoral head of a hip prosthesis, whose wear behavior will be quantified using a hip joint simulator during one million of cycles (corresponding to the human activity during one year).

  13. Thickness dependent structural, optical and electrical properties of CuIn0.8Ga0.2Se2 thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mishra, Pradeep K.; Gautam, Yogendra K.; Kumar, Ashwani; Jain, Ravish K.; Prasad, J. N.; Choudhary, A. K.; Chandra, Ramesh

    2014-01-01

    CuIn0.8Ga0.2Se2 (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaks for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ˜106 cm-1 absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.

  14. Continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films

    NASA Astrophysics Data System (ADS)

    Christen, H. M.; Silliman, S. D.; Harshavardhan, K. S.

    2001-06-01

    A novel continuous-compositional-spread (CCS) technique based on the nonuniformity of the deposition rate typically observed in pulsed-laser deposition (PLD) is introduced. Using rapid (submonolayer) sequential deposition of the phase spread's constituents, intermixing of the constituents occurs on the atomic scale during the growth process. Therefore, a pseudobinary or pseudoternary phase diagram is deposited without the requirement of a postanneal. The approach uses the spatial variations in the deposition rate naturally occurring in PLD; therefore, there is no need for the masks typically used in combinatorial techniques. Consequently, combinatorial materials synthesis can be carried out under optimized film growth conditions (for example, complex oxides can be grown at high temperature). Additionally, lifting the need for postannealing renders this method applicable to heat-sensitive materials and substrates (e.g., films of transparent oxides on polymer substrates). PLD CCS thus offers an interesting alternative to traditional "combi" for situations where the number of constituents is limited, but the process variables are of critical importance. Additionally, the approach benefits from all the advantages of PLD, particularly the flexibility and the possibility to work with targets of relatively small size. Composition determination across the sample and mapping of physical properties onto the ternary phase diagram is achieved via a simple algorithm using the parameters that describe the deposition-rate profiles. Experimental verification using energy-dispersive x-ray spectroscopy and Rutherford backscattering spectroscopy measurements demonstrates the excellent agreement between the predicted and the calculated composition values. Results are shown for the high-temperature growth of crystalline perovskites [including (Ba,Sr)TiO3 and the formation of a metastable alloy between SrRuO3 and SrSnO3] and the room-temperature growth of transparent conducting oxides.

  15. Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

    NASA Astrophysics Data System (ADS)

    Desbiens, E.; Dolbec, R.; El Khakani, M. A.

    2002-05-01

    We have successfully developed two reactive pulsed laser deposition (PLD) processes for the growth of high-k SiO2 and SiOxNy thin films. At a KrF laser intensity of 3×108 W/cm2, both SiO2 and SiOxNy films have been deposited by ablating a silicon target in a reactive gas atmosphere (O2 and O2/N2 mixture, respectively) on both Si (100) and Pt-coated Si substrates. Two key issues are presented here, namely (i) the effect of the deposition temperature (Td in the 20-450 °C range) and (ii) the effect of the N incorporation (in the 0.3-20 at. % concentration range) on the microstructure and electrical properties of PLD SiO2 and SiOxNy thin films, respectively. For the PLD-SiO2 films, 300 °C has been identified as the optimal deposition temperature that yields stoichiometric ([O]/[Si]~1.9), hydrogen-free films with a low local disorder, a highly dense microstructure and a dielectric constant (k) higher than that quoted for thermally grown SiO2. On the other hand, the PLD SiOxNy films containing 20 at. % of N have exhibited a dielectric constant as high as ~7. A rather good agreement is obtained between the k values deduced from the Poole-Frenkel emission (PFE) model and those obtained from direct impedance measurements, confirming thereby that the PFE remains the predominant conduction mechanism in the PLD SiOxNy films.

  16. Effect of phase transformation on optical and dielectric properties of pulsed laser deposited ZnTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.; Salim, Mohammad; Kaur, Davinder

    2016-04-01

    Zinc titanate (ZnTiO3) ceramics were prepared by conventional solid state reaction method using ZnO and TiO2 in a molar ratio of 1:1 with optimized parameters. It was found that the sample sintered at 800 °C for 12 h exhibit single hexagonal phase of ZnTiO3. ZnTiO3 thin film have been deposited on ITO coated glass substrate using pulsed laser deposition (PLD) technique employing a KrF laser source (λ = 248 nm). In present work, the effect of substrate temperature, which leads to transformation of hexagonal phase to cubic phase, has been studied. The XRD pattern revealed that pure hexagonal phase of ZnTiO3 appear upto 400 °C and more increment in substrate temperature leads to transformation of hexagonal phase to cubic phase. We have observed the blue shift in absorption edge at lower temperature. When the substrate temperature increases from 300 to 400 °C the band gap decreases due to strong hexagonal phase, but more increment in substrate temperature increases the band gap causes by change of phase from hexagonal to cubic. The dielectric constant of ZnTiO3 thin film increases as the substrate temperature increases due to the enhancement in crystallinity and improved morphology.

  17. Nanostructured arrays of semiconducting octahedral molecular sieves by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Espinal, Anais E.; Zhang, Lichun; Chen, Chun-Hu; Morey, Aimee; Nie, Yuefeng; Espinal, Laura; Wells, Barrett O.; Joesten, Raymond; Aindow, Mark; Suib, Steven L.

    2010-01-01

    Cryptomelane-type manganese oxide (OMS-2) has been widely used to explore the semiconducting and catalytic properties of molecular sieves with mixed-valent frameworks. Selective synthesis of patterned thin films of OMS-2 with hierarchical nanostructures and oriented crystals is challenging owing to difficulties in preserving the mixed valence, porosity and crystalline phase. Here, we report that pulsed-laser ablation of OMS-2 in an oxygen-rich medium produces a three-dimensional nanostructured array of parallel and inclined OMS-2 fibres on bare substrates of (001) single-crystal strontium titanate. Both parallel and inclined OMS-2 fibres elongate along the [001]OMS-2 direction. The parallel fibres interact strongly with the substrate and grow epitaxially along <110>STO with lattice misfits of less than 4%, whereas the inclined fibres are oriented with (301) parallel to the substrate surface. The spontaneous orientation of the crystalline OMS-2 domains over the STO surface opens up a new avenue in lattice-engineered synthesis of multilayer materials.

  18. Room-temperature deposition of nanocrystalline PbWO 4 thin films by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Ryu, J. H.; Yoon, J.-W.; Shim, K. B.; Koshizaki, N.

    2006-07-01

    Pulsed laser ablation (PLA) was applied to synthesize nanocrystalline PbWO4 thin films onto glass substrates. The effects of Ar background gas pressure on phase evolution, microstructures and optical characteristics of PbWO4 thin films were investigated in detail. The PLA processes were carried out at room temperature without substrate heating or post-annealing treatment. XRD and HR-TEM results revealed that the PbWO4 thin films are composed of nanocrystalline and amorphous phases. Moreover, the films contained a high density of lattice defects such as twin boundaries and edge dislocations. The crystallite size and crystallinity increased, which were associated with a change in surface morphology as the Ar pressure increased. Reduced tungsten states W5+ or W4+ induced by oxygen vacancies were observed at 10 Pa and the atomic concentration of all constituent element was almost stoichiometric, especially the [Pb]/[W] ratio, which was nearly unity above 50 Pa. The optical energy band-gap was 3.03 eV at 50 Pa and increased to 3.35 eV at 100 Pa, which are narrower than the reported value (4.20 eV). This optical band-gap narrowing could be attributed to localized band-tail states and new energy levels induced by the amorphous structure and inherent lattice defects.

  19. Laser fusion pulse shape controller

    DOEpatents

    Siebert, Larry D.

    1977-01-01

    An apparatus for controlling the pulse shape, i.e., the pulse duration and intensity pattern, of a pulsed laser system, and which is particularly well adapted for controlling the pellet ignition pulse in a laser-driven fusion reaction system. The apparatus comprises a laser generator for providing an optical control pulse of the shape desired, a pulsed laser triggered by the control pulse, and a plurality of optical Kerr-effect gates serially disposed at the output of the pulsed laser and selectively triggered by the control pulse to pass only a portion of the pulsed laser output generally corresponding in shape to the control pulse.

  20. Graphene-based textured surface by pulsed laser deposition as a robust platform for surface enhanced Raman scattering applications

    NASA Astrophysics Data System (ADS)

    Tite, T.; Donnet, C.; Loir, A.-S.; Reynaud, S.; Michalon, J.-Y.; Vocanson, F.; Garrelie, F.

    2014-01-01

    We have developed a surface enhanced Raman scattering (SERS)-active substrate based on gold nanoparticles-decorated few-layer (fl) graphene grown by pulsed laser deposition. Diamond-Like Carbon film has been converted to fl-graphene after thermal annealing at low temperature. The formation of fl-graphene was confirmed by Raman spectroscopy, and surface morphology was highlighted by scanning electron microscopy. We found that textured fl-graphene film with nanoscale roughness was highly beneficial for SERS detection. Rhodamine 6G and p-aminothiophenol proposed as test molecules were detected with high sensitivity. The detection at low concentration of deltamethrin, an active molecule of a commercial pesticide was further demonstrated.

  1. Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaojun; Man Yu, Kin; Kronawitter, Coleman X.; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.

    2012-07-01

    Undoped, Cu-doped, Se-enriched, and Cu2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of ˜1.1 × 1019 cm-3 and resistivities of ˜0.098 Ω cm (compared with previous reports of ˜1×1018 cm-3 and ˜0.75 Ω cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors.

  2. Three-dimensional microstructure of high-performance pulsed-laser deposited Ni-YSZ SOFC anodes.

    PubMed

    Kennouche, David; Hong, Jongsup; Noh, Ho-Sung; Son, Ji-Won; Barnett, Scott A

    2014-08-07

    The Ni-yttria-stabilized zirconia (YSZ) anode functional layer in solid oxide fuel cells produced by pulsed laser-deposition was studied using three-dimensional tomography. Anode feature sizes of ~130 nm were quite small relative to typical anodes, but errors arising in imaging and segmentation were shown using a sensitivity analysis to be acceptable. Electrochemical characterization showed that these cells achieved a relatively high maximum power density of 1.4 W cm(-2) with low cell resistance at an operating temperature of 600 °C. The tomographic data showed anode three-phase boundary density of ~56 μm(-2), more than 10 times the value observed in conventional Ni-YSZ anodes. Anode polarization resistance values, predicted by combining the structural data and literature values of three-phase boundary resistance in an electrochemical model, were consistent with measured electrochemical impedance spectra, explaining the excellent intermediate-temperature performance of these cells.

  3. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    SciTech Connect

    Onbasli, M. C. Kim, D. H.; Ross, C. A.; Kehlberger, A.; Jakob, G.; Kläui, M.; Chumak, A. V.; Hillebrands, B.

    2014-10-01

    Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm{sup −3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup −4}. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  4. Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

    SciTech Connect

    Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk

    2014-06-09

    Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600 °C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

  5. On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition

    SciTech Connect

    Schmidt, Florian; Wenckstern, Holger von; Spemann, Daniel; Grundmann, Marius

    2012-07-02

    We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited Mg{sub x}Zn{sub 1-x}O thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate {eta}, is for binary ZnO thin films about 40 cm{sup -1}, a factor of 3 higher than in melt-grown single crystals, and increases to about 100 cm{sup -1} for the Mg-alloyed thin films.

  6. Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pan, Xinhua; Ye, Zhizhen; Li, Jiesheng; Gu, Xiuquan; Zeng, Yujia; He, Haiping; Zhu, Liping; Che, Yong

    2007-03-01

    p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 10 18 cm -3 and resistivity in the range of 2-4 Ω cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (0 0 2)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an Sb Zn-2V Zn complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films.

  7. Advantageous use of metallic cobalt in the target for pulsed laser deposition of cobalt-doped ZnO films

    SciTech Connect

    Ying, Minju E-mail: g.gehring@sheffield.ac.uk; Blythe, Harry J.; Gerriu, Fatma M.; Fox, A. Mark; Gehring, Gillian A. E-mail: g.gehring@sheffield.ac.uk; Dizayee, Wala; Heald, Steve M.

    2016-08-15

    We investigate the magnetic properties of ZnCoO thin films grown by pulsed laser deposition (PLD) from targets made containing metallic Co or CoO precursors instead of the usual Co{sub 3}O{sub 4}. We find that the films grown from metallic Co precursors in an oxygen rich environment contain negligible amounts of Co metal and have a large magnetization at room temperature. Structural analysis by X-ray diffraction and magneto-optical measurements indicate that the enhanced magnetism is due, in part, from Zn vacancies that partially compensate the naturally occurring n-type defects. We conclude that strongly magnetic films of Zn{sub 0.95}Co{sub 0.05}O that do not contain metallic cobalt can be grown by PLD from Co-metal-precursor targets if the films are grown in an oxygen atmosphere.

  8. Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

    SciTech Connect

    Jacimovic, J; Gaal, R; Magrez, Arnaud; Forro, Laszlo; Regmi, Murari; Eres, Gyula

    2013-01-01

    The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.

  9. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    SciTech Connect

    Pan, X. H.; Guo, W.; Pan, X. Q.; Ye, Z. Z.; He, H. P.; Liu, B.; Che, Y.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

  10. Modification of the chemical composition, morphology, and antireflection properties of WSe x films formed by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Grigoriev, S. N.; Nevolin, V. N.; Fominski, V. Yu.; Romanov, R. I.; Volosova, M. A.

    2014-09-01

    We have studied the possibility of controlling important structural characteristics of WSe x films, which belong to the class of layered materials and have good prospects for application in modern nano- and optoelectronic devices. It is established that, by using thermal treatment and ion irradiation during pulsed laser deposition (PLD) in the shadow of an antidroplet shield, it is possible to vary the Se/W atomic ratio from 5 to 1.5, change the character of atomic packing, and obtain films with either smooth or rough surfaces. An increase in the height of parabolic protrusions on the surface up to 200-500 nm leads to a decrease in the optical reflection coefficient in a broad wavelength range from 30% (typical of smooth films) to 6%, which can favor a significant increase in the efficiency of solar cells based on semiconductor films of this type.

  11. Characteristics of ultraviolet-assisted pulsed-laser-deposited Y{sub 2}O{sub 3} thin films

    SciTech Connect

    Cracium, V.; Lambers, E. S.; Bassim, N. D.; Singh, R. K.; Craciun, D.

    2000-02-01

    The properties of thin Y{sub 2}O{sub 3} films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (PLD) technique were studied. With respect to Y{sub 2}O{sub 3} films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD-grown films exhibited better structural and optical properties, especially for lower substrate temperatures, from 340 to 400 degree sign C. These layers were highly crystalline and textured along the (111) direction, and their refractive index values were similar to those of reference Y{sub 2}O{sub 3} layers. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD-grown layers. (c) 2000 Materials Research Society.

  12. Structural and magnetic properties of epitaxial delafossite CuFeO{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Joshi, Toyanath; Senty, Tess R.; Trappen, Robbyn; Zhou, Jinling; Borisov, Pavel; Holcomb, Mikel B.; Bristow, Alan D.; Lederman, David; Chen, Song; Song, Xueyan; Ferrari, Piero; Cabrera, Alejandro L.

    2015-01-07

    Growth of pure phase delafossite CuFeO{sub 2} thin films on Al{sub 2}O{sub 3} (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO{sub 2} films demonstrated a phase transition at T{sub C} ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO{sub 2}. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

  13. Multifractal spectra of scanning electron microscope images of SnO2 thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Chen, Z. W.; Lai, J. K. L.; Shek, C. H.

    2005-09-01

    The concept of fractal geometry has proved useful in describing structures and processes in experimental systems. In this Letter, the surface topographies of SnO2 thin films prepared by pulsed laser deposition for various substrate temperatures were measured by scanning electron microscope (SEM). Multifractal spectra f(α) show that the higher the substrate temperature, the wider the spectrum, and the larger the Δf(Δf=f(α)-f(α)). It is apparent that the nonuniformity of the height distribution increases with the increasing substrate temperature, and the liquid droplets of SnO2 thin films are formed on previous thin films. These results show that the SEM images can be characterized by the multifractal spectra.

  14. In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, C.-L.; Chia, C.-T.; Chiu, C.-C.; Wu, C.-C.; Cheng, H.-F.; Lin, I.-N.

    2001-04-01

    Atomic hydrogen etching on the pulsed laser deposited (PLD) diamond-like carbon (DLC) films were examined in situ by using Raman spectroscopy. Thermal annealing of the as-prepared DLC films was found to alter the D-band (˜1355 cm -1) and G-band (˜1582 cm -1) from unresolved features at room temperature to clearly separated bands at above 500°C, indicating graphitization of the films. The presence of atomic hydrogen retards graphitization at temperatures lower than 500°C, presumably because reactive atomic hydrogen formed sp 3-bonding carbons which prevented graphitization at below 500°C, while at above 500°C, the hydrogen etches away disordered structure of the DLC film as the intensity changes of the D-bands demonstrate.

  15. Imaging pulsed laser deposition growth of homo-epitaxial SrTiO3 by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    van der Torren, A. J. H.; van der Molen, S. J.; Aarts, J.

    2016-12-01

    By combining low-energy electron microscopy with in situ pulsed laser deposition we have developed a new technique for film growth analysis, making use of both diffraction and real-space information. Working at the growth temperature, we can use: the intensity and profile variations of the specular beam to follow the coverage in a layer-by-layer fashion; real-space microscopy to follow e.g. atomic steps at the surface; and electron reflectivity to probe the unoccupied band structure of the grown material. Here, we demonstrate our methodology for homo-epitaxial growth of SrTiO3. Interestingly, the same combination of techniques will also be applicable to hetero-epitaxial oxide growth, largely extending the scope of research possibilities.

  16. Graphene-based textured surface by pulsed laser deposition as a robust platform for surface enhanced Raman scattering applications

    SciTech Connect

    Tite, T.; Donnet, C.; Loir, A.-S.; Reynaud, S.; Michalon, J.-Y.; Vocanson, F.; Garrelie, F.

    2014-01-27

    We have developed a surface enhanced Raman scattering (SERS)-active substrate based on gold nanoparticles-decorated few-layer (fl) graphene grown by pulsed laser deposition. Diamond-Like Carbon film has been converted to fl-graphene after thermal annealing at low temperature. The formation of fl-graphene was confirmed by Raman spectroscopy, and surface morphology was highlighted by scanning electron microscopy. We found that textured fl-graphene film with nanoscale roughness was highly beneficial for SERS detection. Rhodamine 6G and p-aminothiophenol proposed as test molecules were detected with high sensitivity. The detection at low concentration of deltamethrin, an active molecule of a commercial pesticide was further demonstrated.

  17. Studies on the Surface Morphology and Orientation of CeO2 Films Deposited by Pulsed Laser Ablation

    NASA Astrophysics Data System (ADS)

    Develos, Katherine; Kusunoki, Masanobu; Ohshima, Shigetoshi

    1998-11-01

    We studied the surface morphology and orientation of CeO2 films grown by pulsed laser ablation (PLA) on r-cut (1\\=102) Al2O3 substrates and evaluated the effects of predeposition annealing conditions of Al2O3 and film thickness of CeO2. The annealing of Al2O3 substrates improves the smoothness of the surface and performing this in high vacuum leads to better crystallinity and orientation of deposited CeO2 films compared to those annealed in oxygen. A critical value of the film thickness was found beyond which the surface roughness increases abruptly. Atomic force microscopy (AFM) study showed that the surface of CeO2 films is characterized by a mazelike pattern. Increasing the film thickness leads to the formation of larger islands which cause the increase in the surface roughness of the films. The areal density and height of these islands increased with film thickness.

  18. Pulsed laser deposition of ZnO thin films decorated with Au and Pd nanoparticles with enhanced acetone sensing performance

    NASA Astrophysics Data System (ADS)

    Alexiadou, M.; Kandyla, M.; Mousdis, G.; Kompitsas, M.

    2017-04-01

    We fabricate and compare nanocomposite thin-film ZnO chemoresistive acetone sensors with gold or palladium nanoparticles on the surface, at low operating temperatures. The sensors are fabricated by pulsed laser deposition and operate in the temperature range 159-200 °C. The ZnO films are polycrystalline, crystallizing mainly at the (002) and (101) orientations of the hexagonal phase. The nanocomposite ZnO:Au and ZnO:Pd sensors have a lower detection limit and show a response enhancement factor between 2 and 7, compared with pure ZnO sensors. The ZnO:Pd sensor performs better than the ZnO:Au sensor. The ZnO:Pd sensor sensitivity increases with the amount of palladium on the surface, while it remains roughly unchanged with the ZnO thickness. The lowest acetone concentration we detect is 26 ppm for the operating temperature of 200 °C.

  19. Controlled tuning of thin film deposition of IrO{sub 2} on Si using pulsed laser ablation technique

    SciTech Connect

    Koshy, Abraham M. Bhat, Shwetha G. Kumar, P. S. Anil

    2016-05-06

    We have successfully grown a stable phase of polycrystalline IrO{sub 2} on Si (100) substrate. We have found that the phase of IrO{sub 2} can be controllably tuned to obtain either Ir or IrO{sub 2} using pulsed laser ablation technique. O{sub 2} conditions during the deposition influences the phase directly and drastically whereas annealing conditions do not show any variation in the phase of thin film. X-ray diffraction and X-ray photoemission experiments confirm both Ir and IrO{sub 2} can be successively grown on Si using IrO{sub 2} target. Also, the morphology is found to be influenced by the O{sub 2} conditions.

  20. Improved uniformity of multielement thin films prepared by off-axis pulsed laser deposition using a new heater design

    NASA Astrophysics Data System (ADS)

    Cillessen, J. F. M.; de Jong, M. J. M.; Croizé, X.

    1996-09-01

    A new compact substrate heater for the pulsed laser deposition (PLD) technique has been developed. The heater is built up of a radiation part, consisting of two quartz halogen lamps, and a rotating absorber, made of a SiC disk, to which the substrate is attached. The advantage of this system in comparison to conventional heaters is its suitability for substrate temperatures up to 800 °C in any ambient (vacuum as well as corrosive gases). The heater is applied for the deposition of thin, multielement films with improved thickness uniformity using off-axis PLD. This technique makes use of a rotating substrate which is off-centered from the depositing plasma plume. The thickness profile is modeled using predetermined stationary thickness distributions. For a variety of multielement materials good experimental uniformities in terms of thickness (in close agreement with the calculations) and of chemical composition are obtained. A relation is found between the value of experimental parameters and the achievable uniformity area within a large pressure range.

  1. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Ping; Yu, Pin-Feng; Wang, Jyhpyng; Lin, Jiunn-Yuan; Chen, Yen-Mu; Chen, Szu-yuan

    2016-08-01

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  2. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    SciTech Connect

    Yen, Chih-Ping; Yu, Pin-Feng; Wang, Jyhpyng; Lin, Jiunn-Yuan; Chen, Yen-Mu; Chen, Szu-yuan

    2016-08-15

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  3. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

    SciTech Connect

    Majid, S. S. Rahman, F.; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.

    2015-06-24

    We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.

  4. Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant

    NASA Astrophysics Data System (ADS)

    Yu, Shihui; Zhang, Weifeng; Li, Linngxia; Xu, Dan; Dong, Helei; Jin, Yuxin

    2013-12-01

    p-Type transparent conducting antimony-doped tin oxide (ATO) thin films were successfully fabricated on quartz glass substrates by pulsed laser deposition using a 20 at.% Sb doped SnO2 ceramic target. The growth temperature was varied from 500 to 800 °C, after deposition, the thin films were rapidly annealed at 500 °C in air for 2 h. Several analytical tools such as X-ray diffraction (XRD), Hall measurements, four-point probe, field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The Sb-doped SnO2 film prepared at 700 °C possessed the lowest resistivity of 0.87 Ω cm with a Hall mobility of 0.65 cm2 v-1 s-1 and hole concentration of 1.01 × 1019 cm-3, while the average transmittance is about 85% in the visible light region (400-800 nm). Furthermore, SnO2-based p-n homojunction was fabricated by deposition of a Sb-doped p-type SnO2 layer on a Sb-doped n-type SnO2 layer.

  5. Morphological and chemical structure of silver-doped barium strontium titanate thin films fabricated via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Neelakanta Reddy, I.; Venkata Reddy, Ch; Cho, Mi-Gyung; Shim, Jaesool

    2017-07-01

    Ag-doped barium strontium titanate (Ag/BST) thin films deposited on Si (1 0 0) substrates at various substrate temperatures and oxygen partial pressures via pulsed laser deposition were investigated. The effects of the substrate temperature and oxygen partial pressure on the crystalline structure, chemical state, and morphology were investigated via x-ray diffraction analysis, field-emission scanning electron microscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy. The as-deposited thin films were found to be amorphous in nature. However, as the substrate temperature increased, the crystallinity of the films increased. The crystallite size varied from approximately 13 to 33 nm with respect to the substrate temperature. A uniform film with low roughness was obtained at high substrate temperatures with lattice parameters of a  =  3.8272 Å and c  =  4.4545 Å. A film prepared at 600 °C exhibited a better crystalline structure and a low surface roughness of approximately 70 nm. XPS revealed the core-level spectra of Ba3d, Sr3d, Ti2p, O1s, and Ag3d. An orange emission band at 571 nm was observed in photoluminescence studies of the Ag/BST thin films.

  6. A study on in vitro and in vivo bioactivity of HA/45S5 composite films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, D. G.; Chen, C. Z.; Ma, Q. S.; Jin, Q. P.; Li, H. C.

    2013-04-01

    HA/45S5 composite films were deposited by pulsed laser, the crystalline phases, microstructure and bonding configurations of the films were studied by XRD, SEM and FTIR respectively, and the film-to-substrate adhesion was investigated by micro-scratch testing. In addition, the in vitro and in vivo assays were carried out. The results showed that the crystallinity and the adhesive strength of the films increased with the increase of the substrate temperature. The film deposited with the substrate temperature of 200 °C is amorphous, while crystalline HA and β-TCP were detected in the film deposited at 600 °C. The in vitro test indicates that the amorphous film has faster dissolution rate and reprecipitation rate, which implies that this film has better bioactivity than the crystalline film. However, the in vivo test suggested that the 600 °C film was more suitable to serve as clinical application than the 200 °C film, because new bone tissue grew better onto the 600 °C film surface than onto the 200 °C film surface when they were implanted in the rabbit shin bones.

  7. Pulsed Laser Propulsion.

    DTIC Science & Technology

    1978-10-01

    afforded by a pulsed laser propulsion system over a CW laser propulsion system are 1) simplicity in engine design as a result of permitting the laser...to engineering and weight considerations. The lower boundary of the corridor is set by propellant feed considerations. To the right of this boundary...example, a OOJ -5 per pulse laser operating at 7 x 10 sec between pulses (14, 285 pps) is capable of powering a 30 lb (135 Nt)thrust rocket engine that has

  8. Infrared and raman spectroscopic studies of optically transparent zirconia (ZrO2) films deposited by plasma-assisted reactive pulsed laser deposition.

    PubMed

    Zhang, Wei; Gan, Jie; Hu, Zhigao; Yu, Wenlei; Li, Qian; Sun, Jian; Xu, Ning; Wu, Jiada; Ying, Zhifeng

    2011-05-01

    Plasma-assisted pulsed laser deposited zirconia (ZrO(2)) films were studied by Fourier transform infrared (FT-IR) and Raman spectroscopy for structural characterization and thermal stability in combination with optical characterization by spectroscopic ellipsometry and optical transmission measurements. Only the monoclinic ZrO(2) phase was positively identified from the infrared and Raman spectra of the as-deposited ZrO(2) films, which show excellent optical transparency from the ultraviolet to the near infrared as revealed by optical characterization. The as-deposited ZrO(2) films are free of any SiO(x) interfacial layer when deposited on silicon. The prepared ZrO(2) films exhibit good thermal stability in their structural, optical, and interfacial properties up to 900 °C. Upon annealing above 1100 °C, a silicon oxide interfacial layer forms due to the oxidation of the silicon substrate surface by the oxygen diffused from the oxide film to the silicon substrate at high temperatures.

  9. Enhancing nonlinear energy deposition into transparent solids with an elliptically polarized and mid-IR heating laser pulse under two-color femtosecond impact

    NASA Astrophysics Data System (ADS)

    Potemkin, F. V.; Mareev, E. I.; Bezsudnova, Yu I.; Platonenko, V. T.; Bravy, B. G.; Gordienko, V. M.

    2017-06-01

    We report on an enhancement of deposited energy density of up to 10 kJ cm-3 inside transparent solids (fused silica and quartz) from using two-color µJ energy level tightly focused (NA  =  0.5) co-propagating linearly polarized seeding (visible, 0.62 µm) and elliptically polarized heating (near-IR, 1.24 µm) femtosecond laser pulses. The rise in temperature under constant volume causes pressure of up to 12 GPa. It has been shown experimentally and theoretically that the production of seeding electrons through multiphoton ionization by visible laser pulse paves the way for controllability of the energy deposition and laser-induced micromodification via carrier heating by delayed infrared laser pulses inside the material. The developed theoretical approach predicts that the deposited energy density will be enhanced by up to 14 kJ cm-3 when using longer (up to 5 µm) wavelengths for heating laser pulses inside transparent solids.

  10. Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films.

    PubMed

    Hawlová, Petra; Bouška, Marek; Nazabal, Virginie; Baudet, Emeline; Černošek, Zdeněk; Němec, Petr

    2017-05-01

    AsxTe100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under near-bandgap light irradiation. As40Te60 and As50Te50 layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As50Te50 layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As50Te50 thin films promising for applications in nonlinear optics.

  11. Fabrication and characterization of CuxSi1-x films on Si (111) and Si (100) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Wu, Jun; He, Zhiqiang; Xie, Jun; Lu, Jingqi; Tu, Rong; Zhang, Lianmeng; Shi, Ji

    2016-05-01

    The CuxSi1-x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η"-Cu3Si formed on Si (111) at I0 = 1.0-2.0 J/cm2. The films were consisted of Cu, η'-Cu3Si, ɛ-Cu15Si4 and δ-Cu0.83Si0.17 at Td = 100-500 °C on Si (001). The films were the single phase of η-Cu3Si at Td = 700 °C. In the case of Si (111), the phase structures transformed from Cu to Cu + η'-Cu3Si to η'-Cu3Si to η'-Cu3Si + η-Cu3Si with the increasing of Td. Rectangular grains were formed on Si (001), whereas triangular grains on Si (111). Cu (001) film was epitaxially grown on Si (001) at I0 = 1.5 J/cm2 and Td = 20 °C. η-Cu3Si (001) epitaxial layer was formed on Si (111) at I0 = 1.5 J/cm2 and Td = 700 °C. The epitaxial relationships of Cu (001)[100]//Si (001)[110] and η-Cu3Si (001)[-110]//Si (111)[11-2] were identified.

  12. Effect of different oxidizing gases on the in-situ growth of YBa 2Cu 3O 7-δ films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gupta, A.; Hussey, B. W.; Chern, M. Y.

    1992-10-01

    The effectiveness of oxygen (O 2), nitrous oxide (N 2O), and nitrogen dioxide (NO 2) as oxidizing agents during in-situ growth of YBa 2Cu 3O 7-δ (YBCO) films on (100) SrTiO 3 substrates by pulsed laser deposition has been studied as a function of deposition temperature (700-800°C), and laser wavelength (193,248 and 355 nm), for a wide range of oxidizer gas pressure (0.1-200 mTorr). In general, the superconducting transition temperature of the films has been found to increase with increasing oxidant pressure, with zero-resistance temperature ≈90 K only obtained in films prepared in a relatively high pressure (150-200 mTorr) of oxidizer gas. At lower pressures, the transition temperature while being depressed is quite sensitive to the nature of the oxidant, the laser wavelength and the deposition temperature. Nevertheless, independent of the oxygen source or other growth parameters, an almost linear decrease in transition temperature with a corresponding increase in the c-axis lattice parameter has been observed for all the film. YBCO films have also been deposited in a low pressure background (≤ 1 mTorr) using a combination of atomic oxygen and pulsed molecular oxygen. The results are discussed in terms of the oxygen requirement for kinetic and thermodynamic stability of YBCO during growth of the film by pulsed laser deposition.

  13. The investigation of Ni-Al and Co-Al based layered double hydroxides and their derived mixed oxides thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Birjega, R.; Matei, A.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Colceag, D.; Zavoianu, R.; Pavel, O. D.; Dinescu, M.

    2013-08-01

    Layered Double Hydroxides (LDHs) are host-guest materials consisting of positively charged metal/hydroxides sheets with intercalated anions and water molecules. LDHs can be described by the generic formula [[ṡmHO and their structure is formed by layers containing divalent cations (M2+: Mg, Zn, Ni, Co,…) and trivalent cations (M3+: Al, Ga, Cr,…) with an octahedral coordination. LDH films with well-oriented structure and controlled thickness are needed for numerous applications like sensors, protective coatings, catalysts, components for optoelectronics etc. In this work, we report on the deposition of Ni-Al and Co-Al based LDHs and their derived mixed oxides by pulsed laser deposition as a new approach to fabricate oriented LDHs or highly dispersed metallic mixed oxides. The influence of the laser characteristics, such as wavelength and fluence, on the films properties was studied. The films investigation techniques were X-Ray Diffraction, Atomic Force Microscopy, Scanning Electron Microscopy combined with energy dispersive X-ray analysis, and Secondary Ions Mass Spectrometry.

  14. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    SciTech Connect

    Sanchez-Ake, C.; Camacho, R.; Moreno, L.

    2012-08-15

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction between plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.

  15. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  16. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

    PubMed

    Chen, Shih-Chen; Hsieh, Dan-Hua; Jiang, Hsin; Liao, Yu-Kuang; Lai, Fang-I; Chen, Chyong-Hua; Luo, Chih Wei; Juang, Jenh-Yih; Chueh, Yu-Lun; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

  17. Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Narita, S.; Meguro, K.; Takami, T.; Enta, Y.; Nakazawa, H.

    2017-02-01

    We have grown aluminum nitride (AlN) films on Si(110) substrates by pulsed laser deposition (PLD), and investigated the effects of laser power on the crystallinity and surface morphology of the AlN films. First, we epitaxially grew a fairly flat, high-quality AlN film, which contained no rotation domains, onto the Si(110) substrate in a well-lattice-matched relationship. Secondly, we formed a SiC interfacial buffer layer on the AlN film to grow a high-quality 3C-SiC film on the SiC buffer layer by PLD, which gave rise to a 3C-SiC(111)3×3 surface. The root-mean-square-roughness value of the SiC film was smaller than the previously reported values of SiC/AlN multilayers on Si(100) and Si(111) substrates. Thirdly, we grew graphene by annealing the SiC film at a high temperature in an ultra-high vacuum. It was demonstrated that the qualified graphene layer without rotation domains was grown on the SiC film. The formation of voids and the outdiffusion of Al and N atoms from the AlN film were successfully suppressed during the high-temperature annealing.

  18. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

    PubMed Central

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD. PMID:24959108

  19. Effect of Ablation Rate on the Microstructure and Electrochromic Properties of Pulsed-Laser-Deposited Molybdenum Oxide Thin Films.

    PubMed

    Santhosh, S; Mathankumar, M; Selva Chandrasekaran, S; Nanda Kumar, A K; Murugan, P; Subramanian, B

    2017-01-10

    Molybdenum trioxide (MoO3) is a well-known electrochromic material. In the present work, n-type α-MoO3 thin films with both direct and indirect band gaps were fabricated by varying the laser repetition (ablation) rate in a pulsed laser deposition (PLD) system at a constant reactive O2 pressure. The electrochromic properties of the films are compared and correlated to the microstructure and molecular-level coordination. Mixed amorphous and textured crystallites evolve at the microstructural level. At the molecular level, using NMR and EPR, we show that the change in the repetition rate results in a variation of the molybdenum coordination with oxygen: at low repetition rates (2 Hz), the larger the octahedral coordination, and greater the texture, whereas at 10 Hz, tetrahedral coordination is significant. The anion vacancies also introduce a large density of defect states into the band gap, as evidenced by XPS studies of the valence band and supported by DFT calculations. The electrochromic contrast improved remarkably by almost 100% at higher repetition rates whereas the switching speed decreased by almost 6-fold. Although the electrochromic contrast and coloration efficiency were better at higher repetition rates, the switching speed, reversibility, and stability were better at low repetition rates. This difference in the electrochromic properties of the two MoO3 films is attributed to the variation in the defect and molecular coordination states of the Mo cation.

  20. Pulsed laser deposition of two-dimensional ZnO nanocrystals on Au(111): growth, surface structure and electronic properties

    NASA Astrophysics Data System (ADS)

    Tumino, F.; Casari, C. S.; Passoni, M.; Bottani, C. E.; Li Bassi, A.

    2016-11-01

    Two-dimensional (2D) ZnO structures have been deposited on the Au(111) surface by means of the pulsed laser deposition technique. In situ scanning tunneling microscopy and scanning tunneling spectroscopy measurements have been performed to characterize morphological, structural and electronic properties of 2D ZnO at the nanoscale. Starting from a sub-monolayer coverage, we investigated the growth of ZnO, identifying different atomic layers (up to the fifth). At low coverage, we observed single- and bi-layer nanocrystals, characterized by a surface moiré pattern that is associated to a graphene-like ZnO structure. By increasing the coverage, we revealed a morphological change starting from the fourth layer, which was attributed to a transition toward a bulk-like structure. Investigation of the electronic properties revealed the semiconducting character of 2D ZnO. We observed a dependence of the density of states (DOS) and, in particular, of the conduction band (CB) on the ZnO thickness, with a decreasing of the CB onset energy for increasing thickness. The CB DOS of 2D ZnO shows a step-like behaviour which may be interpreted as due to a 2D quantum confinement effect in ZnO atomic layers.