Schemes for efficient QW pumping of AlGaInP disk lasers

NASA Astrophysics Data System (ADS)

Brauch, Uwe; Mateo, Cherry May N.; Kahle, Hermann; Bek, Roman; Jetter, Michael; Abdou Ahmed, Marwan; Michler, Peter; Graf, Thomas

2017-02-01

Keys to high-power operation of disk lasers are a thin active layer, a small Stokes shift and an efficient cooling, best realized with a limited number of QWs which are pumped close to the laser wavelength and which are in close contact with one or two diamond heat sinks. To get sufficient pump absorption many passes of the pump radiation are needed. This can be realized either by taking advantage of intrinsic resonances (designed for the pump radiation) or by an external multi-pass optics (known from Yb disk lasers) or a combination of both. The various options will be discussed and some results for AlGaInP disk lasers will be presented.

DISK PUMP FEASIBILITY INVESTIGATION,

DTIC Science & Technology

system as an inducer and/or mainstage pump for liquid rocket applications. This investigation consisted of the analysis, design, and test of a disk...pumping action is a function of the viscous properties of the pumped fluid. (2) The pump does not require the conventional pump lifting forces. ( 3 ...with no apparent head deterioration. The representative maximum suction specific speed at a 3 % head drop was never reached. The pump demonstrated

Method for optical pumping of thin laser media at high average power

DOEpatents

Zapata, Luis E [Livermore, CA; Beach, Raymond J [Livermore, CA; Honea, Eric C [Sunol, CA; Payne, Stephen A [Castro Valley, CA

2004-07-13

A thin, planar laser material is bonded to a light guide of an index-matched material forming a composite disk. Diode array or other pump light is introduced into the composite disk through the edges of the disk. Pump light trapped within the composite disk depletes as it multi-passes the laser medium before reaching an opposing edge of the disk. The resulting compound optical structure efficiently delivers concentrated pump light and to a laser medium of minimum thickness. The external face of the laser medium is used for cooling. A high performance cooler attached to the external face of the laser medium rejects heat. Laser beam extraction is parallel to the heat flux to minimize optical distortions.

Modeling of a diode-pumped thin-disk cesium vapor laser

NASA Astrophysics Data System (ADS)

An, Guofei; Cai, He; Liu, Xiaoxu; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

2018-03-01

A diode pumped alkali laser (DPAL) provides a significant potential for construction of high-powered lasers. Until now, a series of models have been established to analyze the kinetic process and most of them are based on the end-pumped alkali laser system in which the vapor cell are usually cylindrical and cuboid. In this paper, a mathematic model is constructed to investigate the kinetic processes of a diode pumped thin-disk cesium vapor laser, in which the cesium vapor and the buffer gases are beforehand filled in a sealed glass cell with a thin-disk structure. We systemically study the influences of the cell temperature and cell thickness on the output features of a thin-disk DPAL. Further, we study the thin-disk DPAL with the W-shaped resonator and multiple-disk configuration. To the best of our knowledge, there have not been any similar reports so far.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Thermally induced optical deformation of a Nd:YVO4 active disk under the action of multi-beam spatially periodic diode pumping

NASA Astrophysics Data System (ADS)

Guryev, D. A.; Nikolaev, D. A.; Tsvetkov, V. B.; Shcherbakov, I. A.

2018-05-01

A study of how the transverse distribution of an optical path changes in a Nd:YVO4 active disk was carried out in a ten-beam spatially periodic diode pumping in the one-dimensional case. The pumping beams’ transverse dimensions were comparable with the distances between them. The investigations were carried out using laser interferometry methods. It was found that the optical thickness changing in the active disk along the line of pumping spots was well described by a Gaussian function.

Time Resolved Near Field Optical Microscopy

NASA Astrophysics Data System (ADS)

Stark, J. B.

1996-03-01

We use broadband pulses to image the carrier dynamics of semiconductor microstructures on a 150 nm spatial scale, with a time resolution of 60 femtoseconds. Etched disks of GaAs/AlGaAs multiple quantum well material, 10 microns in diameter, are excited with a 30 fs pump from a Ti:Sapphire laser, and probed using a near-field optical microscope. The nonlinear transmission of the microdisks is measured using a double-modulation technique, sensitive to transmission changes of 0.0005 within a 150 nm diameter spot on the sample. This spot is scanned to produce an image of the sample. The nonlinear response is produced by the occupation of phase space by the excited distribution. Images of this evolving distribution are collected at time intervals following excitation, measuring the relaxation of carriers at each point in the microdisk. The resulting data can be viewed as a movie of the carrier dynamics of nonequilibrium distributions in excited semiconductor structures. Work done in collaboration with U. Mohideen and R. E. Slusher.

Mathematical modelling of flow in disc friction LVAD pump

NASA Astrophysics Data System (ADS)

Medvedev, A. E.; Fomin, V. M.; Prikhodko, Yu. M.; Cherniavskiy, A. M.; Fomichev, V. P.; Fomichev, A. V.; Chekhov, V. P.; Ruzmatov, T. M.

2017-10-01

The need for blood circulation support systems in the treatment of chronic heart failure is constantly increasing as 20% of patients on the waiting list die every year. Despite the great need for mechanical heart support systems the use of available systems is limited by the high cost. Therefore, further research in the field of circulatory support systems is appropriate taking into account medical and technical requirements. One of the new research areas is viscous friction disk pumps for transporting liquids based on the Tesla pump principle. The experimental model of LVAD disk pump is developed. Analytical dependencies are obtained to optimize the hydraulic parameters of the pump. On their basis, the experimental model of LVAD disk pump was designed and created. The results of analytical and experimental studies of such a pump are presented.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Apparatus in the form of a disk for the separation of oxygen from other gases and/or for the pumping of oxygen and the method of removing the oxygen

NASA Technical Reports Server (NTRS)

Suitor, Jerry W. (Inventor); Berdahl, C. Martin (Inventor); Marner, Wilbur J. (Inventor)

1989-01-01

An apparatus in the form of a disk for the separation of oxygen from gases, or for the pumping of oxygen, uses a substantially circular disk geometry for the solid electrolyte with radial flow of gas from the outside edge of the disk to the center of the disk. The reduction in available surface area as the gas flows toward the center of the disk reduces the oxygen removal area proportionally to provide for a more uniform removal of oxygen.

A multiple disk centrifugal pump as a blood flow device.

PubMed

Miller, G E; Etter, B D; Dorsi, J M

1990-02-01

A multiple disk, shear force, valveless centrifugal pump was studied to determine its suitability as a blood flow device. A pulsatile version of the Tesla viscous flow turbine was designed by modifying the original steady flow pump concept to produce physiological pressures and flows with the aid of controlling circuitry. Pressures and flows from this pump were compared to a Harvard Apparatus pulsatile piston pump. Both pumps were connected to an artificial circulatory system. Frequency and systolic duration were varied over a range of physiological conditions for both pumps. The results indicated that the Tesla pump, operating in a pulsatile mode, is capable of producing physiologic pressures and flows similar to the Harvard pump and other pulsatile blood pumps.

Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yurkin, A A

2016-03-31

We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is summarized in Section 5, and information on publications resulting from this work is provided in Section 6.

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1991-01-01

The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 {mu}m with intracavity frequency doubling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavel, Nicolaie; Luenstedt, Kai; Petermann, Klaus

2007-12-01

The laser performances of the 1.06 {mu}m 4F3/2 --> 4I11/2 four-level transition and of the 0.9 {mu}m 4F3/2 --> I9/24 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 {mu}m into the 4F5/2 level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 {mu}m, in the multiwatt region at 0.91 {mu}m in Nd:YVO4 and Nd:GdVO4, and at 0.95 {mu}m in Nd:YAG. Intracavity frequency-doubled Nd:YVO4 thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength.more » The pumping at 0.88 {mu}m, which is directed into the 4F3/2 emitting level, was also employed, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with {approx}9 W output power at 1.06 {mu}m and visible laser radiation at 0.53 {mu}m with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 {mu}m were obtained under pumping directly into the 4F3/2 emitting level.« less

The broad applicability of the disk laser principle: from CW to ps

NASA Astrophysics Data System (ADS)

Killi, Alexander; Stolzenburg, Christian; Zawischa, Ivo; Sutter, Dirk; Kleinbauer, Jochen; Schad, Sven; Brockmann, Rüdiger; Weiler, Sascha; Neuhaus, Jörg; Kalfhues, Steffen; Mehner, Eva; Bauer, Dominik; Schlueter, Holger; Schmitz, Christian

2009-02-01

The quasi two-dimensional geometry of the disk laser results in conceptional advantages over other geometries. Fundamentally, the thin disk laser allows true power scaling by increasing the pump spot diameter on the disk while keeping the power density constant. This scaling procedure keeps optical peak intensity, temperature, stress profile, and optical path differences in the disk nearly unchanged. The required pump beam brightness - a main cost driver of DPSSL systems - also remains constant. We present these fundamental concepts and present results in the wide range of multi kW-class CW-sources, high power Q-switched sources and ultrashort pulsed sources.

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

NASA Astrophysics Data System (ADS)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE PAGES

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; ...

2016-01-26

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

50-mJ, 1-kHz Yb:YAG thin-disk regenerative amplifier with 969-nm pulsed pumping

NASA Astrophysics Data System (ADS)

Chyla, Michal; Miura, Taisuke; Smrž, Martin; Severova, Patricie; Novak, Ondrej; Endo, Akira; Mocek, Tomas

2014-02-01

We are developing a 100-mJ Yb:YAG thin-disk regenerative amplifier operating at 1-kHz repetition rate pumped at zero-phonon-line (968.825-nm1) and delivering 1-2 ps pulses for EUV plasma sources applicable in science and industry. Recently we achieved the output energy of nearly 50-mJ from a single laser-head cavity with good beam quality (M2<1.2) as well as stable beam-pointing (<4μrad). Applying pulsed pumping with the pulse duration shorter than the upper state lifetime of Yb:YAG helps to reduce the ASE and thermal loading of the thin-disk.

A study of the effects of disk flexibility on the rotordynamics of the space shuttle main engine turbo-pumps

NASA Technical Reports Server (NTRS)

Flowers, George T.

1989-01-01

Rotor dynamical analyses are typically performed using rigid disk models. Studies of rotor models in which the effects of disk flexibility were included indicate that is may be an important effect for many systems. This issue is addressed with respect to the Space Shuttle Main Engine high pressure turbo-pumps. Finite element analyses have been performed for a simplified free-free flexible disk rotor model and the modes and frequencies compared to those of a rigid disk model. The simple model was then extended to a more sophisticated HPTOP rotor model and similar results were observed. Equations were developed that are suitable for modifying the current rotordynamical analysis program to account for disk flexibility. Some conclusions are drawn from the results of this work as to the importance of disk flexibility on the HPTOP rotordynamics and some recommendations are given for follow-up research in this area.

Preliminary Study of a Piston Pump for Cryogenic Fluids

NASA Technical Reports Server (NTRS)

Biermann, Arnold E.; Kohl, Robert C.

1959-01-01

Preliminary data are presented covering the performance of a low-speed, five-cylinder piston pump designed for handling boiling hydrogen. This pump was designed for a flow of 55 gallons per minute at 240 rpm with a discharge pressure of 135 pounds per square inch. Tests were made using JP-4 fuel, liquid nitrogen, and liquid hydrogen. Pump delivery and endurance characteristics were satisfactory for the range of operation covered. In connection with the foregoing pump development, the cavitation characteristics of a preliminary visual model, glass-cylinder pump and of a simple reciprocating disk were studied. Subcooling of approximately 0.60 F was obtained from the cavitation produced by reciprocating a disk in boiling nitrogen and in boiling water. The subcooling obtained in a similar manner with liquid hydrogen was somewhat less.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2010-04-13

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2005-03-08

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2015-06-23

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

2014-02-11

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

2015-11-10

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

2014-03-25

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2017-06-06

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2014-02-01

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Sharma, T. K., E-mail: tarun@rrcat.gov.in

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pumpmore » beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.« less

Design of ultrahigh brightness solar-pumped disk laser.

PubMed

Liang, Dawei; Almeida, Joana

2012-09-10

To significantly improve the solar-pumped laser beam brightness, a multi-Fresnel lens scheme is proposed for side-pumping either a single-crystal Nd:YAG or a core-doped ceramic Sm(3+) Nd:YAG disk. Optimum laser system parameters are found through ZEMAX and LASCAD numerical analysis. An ultrahigh laser beam figure of merit B of 53 W is numerically calculated, corresponding to a significant enhancement of more than 180 times over the previous record. 17.7 W/m(2) collection efficiency is also numerically attained. The strong thermal effects that have hampered present-day rod-type solar-pumped lasers can also be largely alleviated.

GHz Yb:KYW oscillators in time-resolved spectroscopy

NASA Astrophysics Data System (ADS)

Li, Changxiu; Krauß, Nico; Schäfer, Gerhard; Ebner, Lukas; Kliebisch, Oliver; Schmidt, Johannes; Winnerl, Stephan; Hettich, Mike; Dekorsy, Thomas

2018-02-01

A high-speed asynchronous optical sampling system (ASOPS) based on Yb:KYW oscillators with 1-GHz repetition rate is reported. Two frequency-offset-stabilized diode-pumped Yb:KYW oscillators are employed as pump and probe source, respectively. The temporal resolution of this system within 1-ns time window is limited to 500 fs and the noise floor around 10-6 (ΔR/R) close to the shot-noise level is obtained within an acquisition time of a few seconds. Coherent acoustic phonons are investigated by measuring multilayer semiconductor structures with multiple quantum wells and aluminum/silicon membranes in this ASOPS system. A wavepacket-like phonon sequence at 360 GHz range is detected in the semiconductor structures and a decaying sequence of acoustic oscillations up to 200 GHz is obtained in the aluminum/silicon membranes. Coherent acoustic phonons generated from semiconductor structures are further manipulated by a double pump scheme through pump time delay control.

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Optical orientation in ferromagnet/semiconductor hybrids

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

NASA Astrophysics Data System (ADS)

Shahamat, Yadollah; Vahedi, Mohammad

2017-06-01

An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

Thermal transpiration in zeolites: A mechanism for motionless gas pumps

NASA Astrophysics Data System (ADS)

Gupta, Naveen K.; Gianchandani, Yogesh B.

2008-11-01

We explore the use of a naturally occurring zeolite, clinoptilolite, for a chip-scale, thermal transpiration-based gas pump. The nanopores in clinoptilolite enable the required free-molecular flow, even at atmospheric pressure. The pump utilizes a foil heater located between zeolite disks in a plastic package. A 2.3mm thick zeolite disk generates a typical gas flow rate of 6.6×10-3 cc/min-cm2 with an input power of <300mW/cm2. The performance is constrained by imperfections in clinoptilolite, which provide estimated leakage apertures of 10.2-13.5μm/cm2 of flow cross section. The transient response of the pump is studied to quantify nonidealities.

Structural and optical behavior due to thermal effects in end-pumped Yb:YAG disk lasers.

PubMed

Sazegari, Vahid; Milani, Mohammad Reza Jafari; Jafari, Ahmad Khayat

2010-12-20

We employ a Monte Carlo ray-tracing code along with the ANSYS package to predict the optical and structural behavior in end-pumped CW Yb:YAG disk lasers. The presence of inhomogeneous temperature, stress, and strain distributions is responsible for many deleterious effects for laser action through disk fracture, strain-induced birefringence, and thermal lensing. The thermal lensing, in turn, results in the optical phase distortion in solid-state lasers. Furthermore, the dependence of optical phase distortion on variables such as the heat transfer coefficient, the cooling fluid temperature, and crystal thickness is discussed.

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yiyun; Ma, Zetao; Zhang, Xuhui

2014-06-02

2-μm micro-disks containing InGaN/GaN quantum wells supported on a tiny Si nanotip are fabricated via microsphere lithography followed by dry and wet etch processes. The micro-disks are studied by photoluminescence at both room-temperature and 10 K. Optically pumped blue lasing at room-temperature is observed via whispering-gallery modes (WGMs) with a lasing threshold as low as 8.43 mJ/cm{sup 2}. Optical resonances in the micro-disks are studied through numerical computations and finite-difference time-domain simulations. The WGMs are further confirmed through the measured broadband transmission spectrum, whose transmission minima coincide well with predicted WGM frequencies.

Parametric presentation of dielectric function of laser pumped wide-zone semiconductor material: Does this function satisfy the Kramers-Kronig relations?

NASA Astrophysics Data System (ADS)

Zimnyakov, D. A.; Yuvchenko, S. A.; Volchkov, S. S.; Samorodina, T. V.

2018-04-01

Dielectric function of wide-zone semiconductor nanoparticles (titanium dioxide) was studied under the condition of laser pumping at various wavelengths. A closed-aperture z-scan method with simultaneous measurements of the right-anglescattered intensity was used to retrieve the real and imaginary parts of dielectric function in the dependence on the pump intensity. It was found that the efficiency of dielectric function modulation by pumping light strongly depends on detuning of the wavelength of pumping light with respect to the fundamental absorption band of nanoparticles. The ColeCole diagrammatic technique was applied for interpretation of the pump-induced changes of the dielectric function in the optical range. Applicability of the Kramers-Kronig relations for description of the observed behavior of the dielectric function is discussed.

The 1.083 micron tunable CW semiconductor laser

NASA Technical Reports Server (NTRS)

Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

1991-01-01

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

Simplified Modeling of Steady-State and Transient Brillouin Gain in Magnetoactive Non-Centrosymmetric Semiconductors

NASA Astrophysics Data System (ADS)

Singh, M.; Aghamkar, P.; Sen, P. K.

With the aid of a hydrodynamic model of semiconductor-plasmas, a detailed analytical investigation is made to study both the steady-state and the transient Brillouin gain in magnetized non-centrosymmetric III-V semiconductors arising from the nonlinear interaction of an intense pump beam with the internally-generated acoustic wave, due to piezoelectric and electrostrictive properties of the crystal. Using the fact that the origin of coherent Brillouin scattering (CBS) lies in the third-order (Brillouin) susceptibility of the medium, we obtained an expression of the gain coefficient of backward Stokes mode in steady-state and transient regimes and studied the dependence of piezoelectricity, magnetic field and pump pulse duration on its growth rate. The threshold-pump intensity and optimum pulse duration for the onset of transient CBS are estimated. The piezoelectricity and externally-applied magnetic field substantially enhances the transient CBS gain coefficient in III-V semiconductors which can be of great use in the compression of scattered pulses.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-11-01

We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

Graphene surface emitting terahertz laser: Diffusion pumping concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

2013-12-16

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho; Yu, Bong-Ahn

2015-03-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-10-01

We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

Solid state radiative heat pump

DOEpatents

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Charge pump-based MOSFET-only 1.5-bit pipelined ADC stage in digital CMOS technology

NASA Astrophysics Data System (ADS)

Singh, Anil; Agarwal, Alpana

2016-10-01

A simple low-power and low-area metal-oxide-semiconductor field-effect transistor-only fully differential 1.5-bit pipelined analog-to-digital converter stage is proposed and designed in Taiwan Semiconductor Manufacturing Company 0.18 μm-technology using BSIM3v3 parameters with supply voltage of 1.8 V in inexpensive digital complementary metal-oxide semiconductor (CMOS) technology. It is based on charge pump technique to achieve the desired voltage gain of 2, independent of capacitor mismatch and avoiding the need of power hungry operational amplifier-based architecture to reduce the power, Si area and cost. Various capacitances are implemented by metal-oxide semiconductor capacitors, offering compatibility with cheaper digital CMOS process in order to reduce the much required manufacturing cost.

Influence of fundamental mode fill factor on disk laser output power and laser beam quality

NASA Astrophysics Data System (ADS)

Cheng, Zhiyong; Yang, Zhuo; Shao, Xichun; Li, Wei; Zhu, Mengzhen

2017-11-01

An three-dimensional numerical model based on finite element method and Fox-Li method with angular spectrum diffraction theoy is developed to calculate the output power and power density distribution of Yb:YAG disk laser. We invest the influence of fundamental mode fill factor(the ratio of fundamental mode size and pump spot size) on the output power and laser beam quality. Due to aspherical aberration and soft aperture effect in laser disk, high beam quality can be achieve with relative lower efficiency. The highest output power of fundamental laser mode is influenced by the fundamental mode fill factor. Besides we find that optimal mode fill factor increase with pump spot size.

Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers.

PubMed

Blin, Stéphane; Vaudel, Olivier; Besnard, Pascal; Gabet, Renaud

2009-05-25

Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical and experimental studies are reported for continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 microm. Hysteresis are driven by either changing the optically injected power or the frequency difference between both lasers. The effect of the injected laser pumping rate is also examined. Systematic mappings of the possible laser outputs (injection locking, bimodal, wave mixing, chaos or relaxation oscillations) are carried out. At small pumping rates (1.2 times threshold), only locking and bimodal regimes are observed. The extent of the bistable area is either 11 dB or 35 GHz, depending on the varying parameters. At high pumping rates (4 times threshold), numerous injection regimes are observed. Injection locking and its bistabilities are also reported for secondary longitudinal modes.

Resonant Tunneling Spin Pump

NASA Technical Reports Server (NTRS)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Measuring the Edge Recombination Velocity of Monolayer Semiconductors.

PubMed

Zhao, Peida; Amani, Matin; Lien, Der-Hsien; Ahn, Geun Ho; Kiriya, Daisuke; Mastandrea, James P; Ager, Joel W; Yablonovitch, Eli; Chrzan, Daryl C; Javey, Ali

2017-09-13

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS 2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ effective , as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS 2 monolayer disks yield an ERV ∼ 4 × 10 4 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

Kilowatt-level direct-'refractive index matching liquid'-cooled Nd:YLF thin disk laser resonator.

PubMed

Ye, Zhibin; Liu, Chong; Tu, Bo; Wang, Ke; Gao, Qingsong; Tang, Chun; Cai, Zhen

2016-01-25

A direct-liquid-cooled Nd:YLF thin disk laser resonator is presented, which features the use of refractive index matching liquid (RIML) as coolant. Highly uniform pump intensity distribution with rectangular shape is realized by using metallic planar waveguides. Much attention has been paid on the design of the gain module, including how to achieve excellent cooling ability with multi-channel coolers and how to choose the doping levels of the crystals for realizing well-distributed pump absorption. The flow velocity of the coolant is found to be a key parameter for laser performance and optimized to keep it in laminar flow status for dissipating unwanted heat load. A single channel device is used to measure the convective heat transfer coefficient (CHTC) at different flow velocities. Accordingly, the thermal stress in the disk is analyzed numerically and the maximum permissible thermal load is estimated. Experimentally, with ten pieces of a-cut Nd:YLF thin disks of different doping levels, a linear polarized laser with an average output power of 1120 W is achieved at the pump power of 5202 W, corresponding to an optical-optical efficiency of 21.5%, and a slope efficiency of 30.8%. Furthermore, the wavefront aberration of the gain module is measured to be quite weak, with a peak to valley (PV) value of 4.0 μm when it is pumped at 5202 W, which enables the feasibility of its application in an unstable resonator. To the best of our knowledge, this is the first demonstration of kilowatt-level direct-'refractive index matching liquid'-cooled Nd:YLF thin disk laser resonator.

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

NASA Astrophysics Data System (ADS)

Zhao, R.; Rossi, A.; Giblin, S. P.; Fletcher, J. D.; Hudson, F. E.; Möttönen, M.; Kataoka, M.; Dzurak, A. S.

2017-10-01

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of e f within a measurement uncertainty as low as 0.27 ppm.

40 CFR 63.1331 - Equipment leak provisions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... pump or seal whereby polymer fluid used to provide lubrication and/or cooling of the pump or agitator... limited to, a rupture disk indicator, magnetic sensor, motion detector on the pressure relief valve stem...

Technical advantages of disk laser technology in short and ultrashort pulse processes

NASA Astrophysics Data System (ADS)

Graham, P.; Stollhof, J.; Weiler, S.; Massa, S.; Faisst, B.; Denney, P.; Gounaris, E.

2011-03-01

This paper demonstrates that disk-laser technology introduces advantages that increase efficiency and allows for high productivity in micro-processing in both the nanosecond (ns) and picosecond (ps) regimes. Some technical advantages of disk technology include not requiring good pump beam quality or special wavelengths for pumping of the disk, high optical efficiencies, no thermal lensing effects and a possible scaling of output power without an increase of pump beam quality. With cavity-dumping, the pulse duration of the disk laser can be specified between 30 and hundreds of nanoseconds, but is independent of frequency, thus maintaining process stability. TRUMPF uses this technology in the 750 watts average power laser TruMicro 7050. High intensity, along with fluency, is important for high ablation rates in thinfilm removal. Thus, these ns lasers show high removal rates, above 60 cm2/s, in thin-film solar cell production. In addition, recent results in paint-stripping of aerospace material prove the green credentials and high processing rates inherent with this technology as it can potentially replace toxic chemical processes. The ps disk technology meanwhile is used in, for example, scribing of solar cells, wafer dicing and drilling injector nozzles, as the pulse duration is short enough to minimize heat input in the laser-matter interaction. In the TruMicro Series 5000, the multi-pass regenerative amplifier stage combines high optical-optical efficiencies together with excellent output beam quality for pulse durations of only 6 ps and high pulse energies of up to 0.25 mJ.

Time-delayed behaviors of transient four-wave mixing signal intensity in inverted semiconductor with carrier-injection pumping

NASA Astrophysics Data System (ADS)

Hu, Zhenhua; Gao, Shen; Xiang, Bowen

2016-01-01

An analytical expression of transient four-wave mixing (TFWM) in inverted semiconductor with carrier-injection pumping was derived from both the density matrix equation and the complex stochastic stationary statistical method of incoherent light. Numerical analysis showed that the TFWM decayed decay is towards the limit of extreme homogeneous and inhomogeneous broadenings in atoms and the decaying time is inversely proportional to half the power of the net carrier densities for a low carrier-density injection and other high carrier-density injection, while it obeys an usual exponential decay with other decaying time that is inversely proportional to half the power of the net carrier density or it obeys an unusual exponential decay with the decaying time that is inversely proportional to a third power of the net carrier density for a moderate carrier-density injection. The results can be applied to studying ultrafast carrier dephasing in the inverted semiconductors such as semiconductor laser amplifier and semiconductor optical amplifier.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Compact laser amplifier system

DOEpatents

Carr, R.B.

1974-02-26

A compact laser amplifier system is described in which a plurality of face-pumped annular disks, aligned along a common axis, independently radially amplify a stimulating light pulse. Partially reflective or lasing means, coaxially positioned at the center of each annualar disk, radially deflects a stimulating light directed down the common axis uniformly into each disk for amplification, such that the light is amplified by the disks in a parallel manner. Circumferential reflecting means coaxially disposed around each disk directs amplified light emission, either toward a common point or in a common direction. (Official Gazette)

Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

NASA Astrophysics Data System (ADS)

Babilotte, P.; Morozov, E.; Ruello, P.; Mounier, D.; Edely, M.; Breteau, J.-M.; Bulou, A.; Gusev, V.

2007-12-01

We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wideband acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (approx 680nm), short acoustic disturbances of approx 7ps of duration have been registered.

Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Eshghi, M. J.; Majdabadi, A.; Koohian, A.

2017-01-01

In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

Coupling effects in the modal emission of colloidal quantum dot microdisk lasers.

NASA Astrophysics Data System (ADS)

Lafalce, Evan; Zheng, Qingji; Lin, Chunhao; Smith, Marcus; Malak, Sidney; Jung, Jaehan; Yoon, Young; Lin, Zhiqun; Tsukruk, Vladimir; Vardeny, Z. Valy

Solution-processed semiconductors such as colloidal quantum dots (CQD) are particularly suited materials for monolithic fabrication of laser microstructures because of their ease of fabrication and compatibility with conventional lithographic techniques. We use the functionality of core/alloyed-shell CQDs to fabricate microdisk lasers of variable size and study the resulting whispering-gallery mode laser emission. In particular we study the effects of near-field coupling on resonant modes of pairs of these lasers with sub-micrometer spacing. We demonstrate the occurrence of lasing modes that originate from the interaction between two such microdisks by means of varying the spatial distribution and magnitude of the gain and loss in the coupled-pair. The transition from emission of modes localized on a single disk to those of the interacting pair is accompanied by coalescence of eigen-frequencies and pump-induced turn-off of lasing, highlighting the role of parity-time symmetry and exceptional point physics. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Phonon-Mediated Exciton Stark Effect Enhanced by a Static Electric Field

NASA Astrophysics Data System (ADS)

Ivanov, A. L.

1997-03-01

The optical properties of semiconductor QW's change in the presence of coherent pump light. The exciton (phonon-mediated, biexciton-mediated, etc.) optical Stark effect is an effective shift of the exciton level that follow dynamically the intensity I0 ~= 0.1 div 1 GW/cm^2 of the pump light. In the present work we develop a theory of a low-intensity electric-field enhanced phonon-mediated optical Stark effect in polar semiconductors and semiconductor microstructures. The main point is that the exciton - LO-phonon Fröhlich interaction can be strongly enhanced by a (quasi-) static electric field F which polarizes the exciton in the geometry F | k | p, where k and p are the wavevectors of the pump and probe light, respectively. The electric field enhancement of spontaneous Raman scattering has been already analyzed (E. Burstein et al., 1971). Even a moderate electric field F ~= 10^3 V/cm reduces the intensity of the pump light to I0 ~= 1 div 10 MW/cm^2. Moreover, the phonon-mediated Stark effect enhanced by a static electric field F allow us to realize the both red and blue dynamical shifts of the exciton level.

Nd:YAG end pumped by semiconductor laser arrays for free space optical communications

NASA Technical Reports Server (NTRS)

Sipes, D. L., Jr.

1985-01-01

Preliminary experimental results are reported for a diode-pumped Nd:YAG laser employing a tightly focused end-pump geometry. The resonator configuration is planoconcave, with the pumped end of the Nd:YAG rod being coated for high reflection at 1.06 microns. This geometry rectifies nearly all the inefficiencies plaguing side-pumped schemes. This laser is further considered as a candidate for optical communication over the deep space channel.

Solid state radiative heat pump

DOEpatents

Berdahl, Paul H.

1986-01-01

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

Highly efficient 400  W near-fundamental-mode green thin-disk laser.

PubMed

Piehler, Stefan; Dietrich, Tom; Rumpel, Martin; Graf, Thomas; Ahmed, Marwan Abdou

2016-01-01

We report on the efficient generation of continuous-wave, high-brightness green laser radiation. Green lasers are particularly interesting for reliable and reproducible deep-penetration welding of copper or for pumping Ti:Sa oscillators. By intracavity second-harmonic generation in a thin-disk laser resonator designed for fundamental-mode operation, an output power of up to 403 W is demonstrated at a wavelength of 515 nm with almost diffraction-limited beam quality. The unprecedented optical efficiency of 40.7% of green output power with respect to the pump power of the thin-disk laser is enabled by the intracavity use of a highly efficient grating waveguide mirror, which combines the functions of wavelength stabilization and spectral narrowing, as well as polarization selection in a single element.

Light sources based on semiconductor current filaments

DOEpatents

Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

2003-01-01

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

An implantable seal-less centrifugal pump with integrated double-disk motor.

PubMed

Schima, H; Schmallegger, H; Huber, L; Birgmann, I; Reindl, C; Schmidt, C; Roschal, K; Wieselthaler, G; Trubel, W; Losert, U

1995-07-01

Thrombus formation and sealing problems at the shaft as well as the compact and efficient design of the driving unit have been major difficulties in the construction of a long-term implantable centrifugal pump. To eliminate the problems of the seal, motor size, and efficiency, two major steps were taken by modifying the Vienna implantable centrifugal pump. First, a special driving unit was developed, in which the permanent magnets of the motor themselves are used for coupling the force into the rotor. Second, the rotor shaft in the pumping chamber was eliminated by adopting a concept recently presented by Ohara. The rotor is supported by 3 pins, which run on a carbon disk, whose concave shape leads to stabilization. The device has the following specifications: size: 65 mm (diameter) by 35 mm (height), 101 cm3; priming volume 30 cm3, 240 g; and a 6-pole brushless double disk DC motor. The required input power of the described prototype is 15 W at 150 mm Hg, 5 L/min (overall eta = 11%), and has an in vitro index of hemolysis (IH) of 0.0046 g/100 L. The test for in vitro thrombus growth exhibited far less thrombus formation in the new design than in designs with axles. In conclusion, the design of a special driving unit and the elimination of the axle led to the construction of a small pump with very low blood traumatization.

Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

2018-04-01

We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Optimum performance of electron beam pumped GaAs and GaN

NASA Astrophysics Data System (ADS)

Afify, M. S.; Moslem, W. M.; Hassouba, M. A.; Abu-El Hassan, A.

2018-05-01

This paper introduces a physical solution in order to overcome the damage to semiconductors, due to increasing temperature during the pumping process. For this purpose, we use quantum hydrodynamic fluid equations, including different quantum effects. This study concludes that nonlinear acoustic waves, in the form of soliton and shock-like (double layer) pulses, can propagate depending on the electron beam temperature and the streaming speed. Therefore, one can precisely tune the beam parameters in order to avoid such unfavorable noises that may lead to defects in semiconductors.

AC signal characterization for optimization of a CMOS single-electron pump

NASA Astrophysics Data System (ADS)

Murray, Roy; Perron, Justin K.; Stewart, M. D., Jr.; Zimmerman, Neil M.

2018-02-01

Pumping single electrons at a set rate is being widely pursued as an electrical current standard. Semiconductor charge pumps have been pursued in a variety of modes, including single gate ratchet, a variety of 2-gate ratchet pumps, and 2-gate turnstiles. Whether pumping with one or two AC signals, lower error rates can result from better knowledge of the properties of the AC signal at the device. In this work, we operated a CMOS single-electron pump with a 2-gate ratchet style measurement and used the results to characterize and optimize our two AC signals. Fitting this data at various frequencies revealed both a difference in signal path length and attenuation between our two AC lines. Using this data, we corrected for the difference in signal path length and attenuation by applying an offset in both the phase and the amplitude at the signal generator. Operating the device as a turnstile while using the optimized parameters determined from the 2-gate ratchet measurement led to much flatter, more robust charge pumping plateaus. This method was useful in tuning our device up for optimal charge pumping, and may prove useful to the semiconductor quantum dot community to determine signal attenuation and path differences at the device.

Tailoring the negative-refractive-index metamaterials composed of semiconductor-metal-semiconductor gold ring/disk cavity heptamers to support strong Fano resonances in the visible spectrum.

PubMed

Ahmadivand, Arash; Pala, Nezih

2015-02-01

In this study, we investigated numerically the plasmon response of a planar negative-index metamaterial composed of symmetric molecular orientations of Au ring/disk nanocavities in a heptamer cluster. Using the plasmon hybridization theory and considering the optical response of an individual nanocluster, we determined the accurate geometrical sizes for a ring/disk nanocavity heptamer. It is shown that the proposed well-organized nanocluster can be tailored to support strong and sharp Fano resonances in the visible spectrum. Surrounding and filling the heptamer clusters by various metasurfaces with different chemical characteristics, and illuminating the structure with an incident light source, we proved that this configuration reflects low losses and isotropic features, including a pronounced Fano dip in the visible spectrum. Technically, employing numerical methods and tuning the geometrical sizes of the structure, we tuned and induced the Fano dip in the visible range, while the dark and bright plasmon resonance extremes are blueshifted to shorter wavelengths dramatically. Considering the calculated transmission window, we quantified the effective refractive index for the structure, while the substance of the substrate material was varied. Using Si, GaP, and InP semiconductors as substrate materials, we calculated and compared the corresponding figure of merit (FOM) for different regimes. The highest possible FOM was obtained for the GaP-Au-GaP negative-refractive-index metamaterial composed of ring/disk nanocavity heptamers as 62.4 at λ∼690  nm (arounnd the position of the Fano dip). Despite the outstanding symmetric nature of the suggested heptamer array, we provided sharp Fano dips by the appropriate tuning of the geometrical and chemical parameters. This study yields a method to employ ring/disk nanocavity heptamers as a negative-refractive-index metamaterial in designing highly accurate localization of surface plasmon resonance sensing devices and biochemical sensors.

Photo-excited multi-frequency terahertz switch based on a composite metamaterial structure

NASA Astrophysics Data System (ADS)

Ji, Hongyu; Zhang, Bo; Wang, Guocui; Wang, Wei; Shen, Jingling

2018-04-01

We propose a photo-excited tunable multi-frequency metamaterial (MM) switch that can be used in the terahertz region. This metamaterial switch is composed of a polyimide substrate and a hybrid metal-semiconductor square split-ring resonator (SRR) with two gaps, with various semiconductors placed in critical regions of the metallic resonator. By changing the incident pump power, we were able to tune the conductivity of the diverse semiconductors filling the gaps of the SRR, and by using an external exciting beam, we were able to modulate the resonant absorption properties of the composite metamaterial structure. We demonstrated the tunable multi-frequency metamaterial switch by irradiating the composite metamaterial structure with a pump laser. In addition, we proposed a tunable metamaterial switch based on a circular metallic split-ring resonator.

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

NASA Astrophysics Data System (ADS)

Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

2018-03-01

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Innovative opto-mechanical design of a laser head for compact thin-disk

NASA Astrophysics Data System (ADS)

Macúchová, Karolina; Smrž, Martin; Řeháková, Martina; Mocek, Tomáš

2016-11-01

We present recent progress in design of innovative versatile laser head for lasers based on thin-disk architecture which are being constructed at the HiLASE centre of the IOP in the Czech Republic. Concept of thin-disk laser technology allows construction of lasers providing excellent beam quality with high average output power and optical efficiency. Our newly designed thin-disk carrier and pump module comes from optical scheme consisting of a parabolic mirror and roof mirrors proposed in 90's. However, mechanical parts and a cooling system were in-house simplified and tailor-made to medium power lasers since no suitable setup was commercially available. Proposed opto-mechanical design is based on stable yet easily adjustable mechanics. The only water nozzle-cooled component is a room-temperature-operated thindisk mounted on a special cooling finger. Cooling of pump optics was replaced by heat conductive transfer from mirrors made of special Al alloy to a massive brass baseplate. Such mirrors are easy to manufacture and very cheap. Presented laser head was manufactured and tested in construction of Er and Yb doped disk lasers. Details of the latest design will be presented.

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

PubMed Central

Alismail, Ayman; Wang, Haochuan; Brons, Jonathan; Fattahi, Hanieh

2017-01-01

This is a report on a 100 W, 20 mJ, 1 ps Yb:YAG thin-disk regenerative amplifier. A homemade Yb:YAG thin-disk, Kerr-lens mode-locked oscillator with turn-key performance and microjoule-level pulse energy is used to seed the regenerative chirped-pulse amplifier. The amplifier is placed in airtight housing. It operates at room temperature and exhibits stable operation at a 5 kHz repetition rate, with a pulse-to-pulse stability less than 1%. By employing a 1.5 mm-thick beta barium borate crystal, the frequency of the laser output is doubled to 515 nm, with an average power of 70 W, which corresponds to an optical-to-optical efficiency of 70%. This superior performance makes the system an attractive pump source for optical parametric chirped-pulse amplifiers in the near-infrared and mid-infrared spectral range. Combining the turn-key performance and the superior stability of the regenerative amplifier, the system facilitates the generation of a broadband, CEP-stable seed. Providing the seed and pump of the optical parametric chirped-pulse amplification (OPCPA) from one laser source eliminates the demand of active temporal synchronization between these pulses. This work presents a detailed guide to set up and operate a Yb:YAG thin-disk regenerative amplifier, based on chirped-pulse amplification (CPA), as a pump source for an optical parametric chirped-pulse amplifier. PMID:28745636

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D A; Pikhtin, N A; Lyutetskiy, A V

2015-07-31

We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking intomore » account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters. (lasers)« less

Vibrational Spectroscopy on Photoexcited Dye-Sensitized Films via Pump-Degenerate Four-Wave Mixing.

PubMed

Abraham, Baxter; Fan, Hao; Galoppini, Elena; Gundlach, Lars

2018-03-01

Molecular sensitization of semiconductor films is an important technology for energy and environmental applications including solar energy conversion, photocatalytic hydrogen production, and water purification. Dye-sensitized films are also scientifically complex and interesting systems with a long history of research. In most applications, photoinduced heterogeneous electron transfer (HET) at the molecule/semiconductor interface is of critical importance, and while great progress has been made in understanding HET, many open questions remain. Of particular interest is the role of combined electronic and vibrational effects and coherence of the dye during HET. The ultrafast nature of the process, the rapid intramolecular vibrational energy redistribution, and vibrational cooling present complications in the study of vibronic coupling in HET. We present the application of a time domain vibrational spectroscopy-pump-degenerate four-wave mixing (pump-DFWM)-to dye-sensitized solid-state semiconductor films. Pump-DFWM can measure Raman-active vibrational modes that are triggered by excitation of the sample with an actinic pump pulse. Modifications to the instrument for solid-state samples and its application to an anatase TiO 2 film sensitized by a Zn-porphyrin dye are discussed. We show an effective combination of experimental techniques to overcome typical challenges in measuring solid-state samples with laser spectroscopy and observe molecular vibrations following HET in a picosecond time window. The cation spectrum of the dye shows modes that can be assigned to the linker group and a mode that is localized on the Zn-phorphyrin chromophore and that is connected to photoexcitation.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Nonlinear response of GaAs gratings in the extraordinary transmission regime.

PubMed

Vincenti, Maria Antonietta; de Ceglia, Domenico; Scalora, Michael

2011-12-01

We theoretically describe a way to enhance harmonic generation from subwavelength slits milled on semiconductor substrates in strongly absorptive regimes. The metal-like response typical of semiconductors, like GaAs and GaP, triggers enhanced transmission and nonlinear optical phenomena in the deep UV range. We numerically study correlations between linear and nonlinear responses and their intricacies in infinite arrays, and highlight differences between nonlinear surface and magnetic sources, and intrinsic χ((2)) and χ((3)) contributions to harmonic generation. The results show promising efficiencies at wavelengths below 120 nm, and reveal coupling of TE and TM polarizations for pump and harmonic signals. A downconversion process that can regenerate pump photons with polarization orthogonal to the incident pump is also discussed. © 2011 Optical Society of America

Fine structure and optical pumping of spins in individual semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Consistent characterization of semiconductor saturable absorber mirrors with single-pulse and pump-probe spectroscopy.

PubMed

Fleischhaker, R; Krauss, N; Schättiger, F; Dekorsy, T

2013-03-25

We study the comparability of the two most important measurement methods used for the characterization of semiconductor saturable absorber mirrors (SESAMs). For both methods, single-pulse spectroscopy (SPS) and pump-probe spectroscopy (PPS), we analyze in detail the time-dependent saturation dynamics inside a SESAM. Based on this analysis, we find that fluence-dependent PPS at complete spatial overlap and zero time delay is equivalent to SPS. We confirm our findings experimentally by comparing data from SPS and PPS of two samples. We show how to interpret this data consistently and we give explanations for possible deviations.

Edge-facet pumped, multi-aperture, thin-disk laser geometry for very high average power output scaling

DOEpatents

Zapata, Luis E.

2004-12-21

The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide proportionately. Strategic facets cut at the edges of the laminated gain medium provide a method by which the pump light introduced through edges of the composite structure is trapped and passes through the gain medium repeatedly. Spontaneous emission escapes the laser volume via these facets. A multi-faceted disk geometry with grooves cut into the thickness of the gain medium is optimized to passively reject spontaneous emission generated within the laser material, which would otherwise be trapped and amplified within the high index composite disk. Such geometry allows the useful size of the laser aperture to be increased, enabling the average laser output power to be scaled.

Nonlinear THz Plamonic Disk Resonators

NASA Astrophysics Data System (ADS)

Seren, Huseyin; Zhang, Jingdi; Keiser, George; Maddox, Scott; Fan, Kebin; Cao, Lingyue; Bank, Seth; Zhang, Xin; Averitt, Richard

2013-03-01

Particle surface plasmons (PPSs) at visible wavelengths continue to be actively investigated with the goal of nanoscale control of light. In contrast, terahertz (THz) surface plasmon experiments are at a nascent stage of investigation. Doped semiconductors with proper carrier density and mobility support THz PSPs. One approach is to utilize thick doped films etched into subwavelength disks. Given the ease of tuning the semiconductor carrier density, THz PSPs are tunable and exhibit interesting nonlinear THz plasmonic effects. We created THz PSP structures using MBE grown 2um thick InAs films with a doping concentration of 1e17cm-3 on 500um thick semi-insulating GaAs substrate. We patterned 40um diameter disks with a 60um period by reactive ion etching. Our THz time-domain measurements reveal a resonance at 1.1THz which agrees well with simulation results using a Drude model. A nonlinear response occurs at high THz electric field strengths (>50kV/cm). In particular, we observed a redshift and quenching of the resonance due to impact ionization which resulted in changes in the carrier density and effective mass due to inter-valley scattering.

Solid state laser disk amplifer architecture: the normal-incidence stack

DOEpatents

Dane, C. Brent; Albrecht, Georg F.; Rotter, Mark D.

2005-01-25

Normal incidence stack architecture coupled with the development of diode array pumping enables the power/energy per disk to be increased, a reduction in beam distortions by orders of magnitude, a beam propagation no longer restricted to only one direction of polarization, and the laser becomes so much more amendable to robust packaging.

Large size crystalline vs. co-sintered ceramic Yb(3+):YAG disk performance in diode pumped amplifiers.

PubMed

Albach, Daniel; Chanteloup, Jean-Christophe

2015-01-12

A comprehensive experimental benchmarking of Yb(3+):YAG crystalline and co-sintered ceramic disks of similar thickness and doping level is presented in the context of high average power laser amplifier operation. Comparison is performed considering gain, depolarization and wave front deformation quantitative measurements and analysis.

Semiconductor laser technology for remote sensing experiments

NASA Technical Reports Server (NTRS)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Circular pump support of blood circulation in the human body

NASA Astrophysics Data System (ADS)

Medvedev, A. E.; Fomin, V. M.; Prikhodko, Yu. M.; Cherniavskiy, A. M.; Fomichev, V. P.; Fomichev, A. V.; Chekhov, V. P.; Ruzmatov, T. M.

2016-10-01

The need of circulatory support systems in the treatment of chronic heart failure is increasing constantly, as 20% of patients in the waiting list die every year. Despite the great need for mechanical heart support systems, using of available systems is limited by the expensiveness. In addition, there is no one system that is 100% responsible to all medical and technical requirements, and would be completely safe for patient. Therefore, further research in the field of circu-latory support systems, considering health and technical requirements is relevant. One of the new directions in the study are disc pumps of viscous friction for liquid transporting, based on the Tesla pump principle. The operation principle of pumps based on the phenomenon of the boundary layer which is formed on the disk rotating in a fluid. There are experimental studies results of models with different variants of the rotor suspension, the various forms and the number of disks, forms the pump housing. However, none of the above samples was not brought to clinical trials. Furthermore, despite the promise of this model is still used today in some circulatory support systems are no similar type pump. Published data provide a basis for further development and testing of the pump model and allow to hope for leveling a number of significant shortcomings of modern left ventricular bypass systems.

Tunable organic transistors that use microfluidic source and drain electrodes

NASA Astrophysics Data System (ADS)

Maltezos, George; Nortrup, Robert; Jeon, Seokwoo; Zaumseil, Jana; Rogers, John A.

2003-09-01

This letter describes a type of transistor that uses conducting fluidic source and drain electrodes of mercury which flow on top of a thin film of the organic semiconductor pentacene. Pumping the mercury through suitably designed microchannels changes the width of the transistor channel and, therefore, the electrical characteristics of the device. Measurements on transistors with a range of channel lengths reveal low contact resistances between mercury and pentacene. Data collected before, during, and after pumping the mercury through the microchannels demonstrate reversible and systematic tuning of the devices. This unusual type of organic transistor has the potential to be useful in plastic microfluidic devices that require active elements for pumps, sensors, or other components. It also represents a noninvasive way to build transistor test structures that incorporate certain classes of chemically and mechanically fragile organic semiconductors.

Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power

NASA Astrophysics Data System (ADS)

Kaspar, Sebastian; Rattunde, Marcel; Töpper, Tino; Schwarz, Ulrich T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim

2012-10-01

A 2 μm electro-optically cavity-dumped semiconductor disk laser (SDL) with a pulse full width at half maximum of 3 ns, a pulse peak power of 30 W, and repetition rates adjustable between 87 kHz and 1 MHz is reported. For ns-pulse cavity dumping the SDL was set up with a 35-cm long cavity into which an intra-cavity Brewster-angled polarizer prism and a Pockels cell for rotation of the linear polarization were inserted. By means of internal total reflection in the birefringent polarizer, pulses are coupled out of the cavity sideways. This variant of ns-pulse 2-μm SDL is well suited for applications such as high-precision light detection and ranging or ns-pulse laser materials processing after further power amplification.

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

PubMed

Link, S M; Maas, D J H C; Waldburger, D; Keller, U

2017-06-16

Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

Highly Efficient Nd:yag Lasers for Free-space Optical Communications

NASA Technical Reports Server (NTRS)

Sipes, D. L., Jr.

1985-01-01

A highly efficient Nd:YAG laser end-pumped by semiconductor lasers as a possible free-space optical communications source is discussed. Because this concept affords high pumping densities, a long absorption length, and excellent mode-matching characteristics, it is estimated that electrical-to-optical efficiencies greater than 5% could be achieved. Several engineering aspects such as resonator size and configuration, pump collecting optics, and thermal effects are also discussed. Finally, possible methods for combining laser-diode pumps to achieve higher output powers are illustrated.

Phase mismatched optical parametric generation in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Dubey, Swati; Ghosh, S.; Jain, Kamal

2017-05-01

Optical parametric generation involves the interaction of pump, signal, and idler waves satisfying law of conservation of energy. Phase mismatch parameter plays important role for the spatial distribution of the field along the medium. In this paper instead of exactly matching wave vector, a small mismatch is admitted with a degree of phase velocity mismatch between these waves. Hence the medium must possess certain finite coherence length. This wave mixing process is well explained by coupled mode theory and one dimensional hydrodynamic model. Based on this scheme, expressions for threshold pump field and transmitted intensity have been derived. It is observed that the threshold pump intensity and transmitted intensity can be manipulated by varying doping concentration and magnetic field under phase mismatched condition. A compound semiconductor crystal of n-InSb is assumed to be shined at 77 K by a 10.6μm CO2 laser with photon energy well below band gap energy of the crystal, so that only free charge carrier influence the optical properties of the medium for the I.R. parametric generation in a semiconductor plasma medium. Favorable parameters were explored to incite the said process keeping in mind the cost effectiveness and conversion efficiency of the process.

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

NASA Technical Reports Server (NTRS)

Thaik, Myo; Hommerich, U.; Schwartz, R. N.; Wilson, R. G.; Zavada, J. M.

1998-01-01

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Canned pump having a high inertia flywheel

DOEpatents

Veronesi, Luciano; Raimondi, ALbert A.

1989-01-01

A canned pump is described which includes a motor, impeller, shaft, and high inertia flywheel mounted within a hermetically sealed casing. The flywheel comprises a heavy metal disk made preferably of a uranium alloy with a stainless steel shell sealably enclosing the heavy metal. The outside surfaces of the stainless steel comprise thrust runners and a journal for mating with, respectively, thrust bearing shoes and radial bearing segments. The bearings prevent vibration of the pump and, simultaneously, minimize power losses normally associated with the flywheel resulting from frictionally pumping surrounding fluid.

Canned pump having a high inertia flywheel

DOEpatents

Veronesi, L.; Raimondi, A.A.

1989-12-12

A canned pump is described which includes a motor, impeller, shaft, and high inertia flywheel mounted within a hermetically sealed casing. The flywheel comprises a heavy metal disk made preferably of a uranium alloy with a stainless steel shell sealably enclosing the heavy metal. The outside surfaces of the stainless steel comprise thrust runners and a journal for mating with, respectively, thrust bearing shoes and radial bearing segments. The bearings prevent vibration of the pump and, simultaneously, minimize power losses normally associated with the flywheel resulting from frictionally pumping surrounding fluid. 5 figs.

Documentation of model input and output values for simulation of pumping effects in Paradise Valley, a basin tributary to the Humboldt River, Humboldt County, Nevada

USGS Publications Warehouse

Carey, A.E.; Prudic, David E.

1996-01-01

Documentation is provided of model input and sample output used in a previous report for analysis of ground-water flow and simulated pumping scenarios in Paradise Valley, Humboldt County, Nevada.Documentation includes files containing input values and listings of sample output. The files, in American International Standard Code for Information Interchange (ASCII) or binary format, are compressed and put on a 3-1/2-inch diskette. The decompressed files require approximately 8.4 megabytes of disk space on an International Business Machine (IBM)- compatible microcomputer using the MicroSoft Disk Operating System (MS-DOS) operating system version 5.0 or greater.

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Piston manometer as an absolute standard for vacuum gage calibration in the range 10 to 700 microtorr

NASA Technical Reports Server (NTRS)

Warshawsky, I.

1972-01-01

Total pressure in a calibration chamber is determined by measuring the force on a disk suspended in an orifice in the baseplate of the chamber. The disk forms a narrow annular gap with the orifice. A continuous flow of calibration gas passes through the chamber and annulus to a downstream pumping system. The ratio of pressures on the two faces of the disk exceeds 100:1, so that chamber pressure is substantially equal to the product of disk area and net force on the disk. This force is measured with an electrodynamometer that can be calibrated in situ with dead weights. Probable error in pressure measurement is plus or minus (0.5 microtorr + 0.6 percent).

High power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Holzer, Marco

2011-02-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With well over 1000 high power disk lasers installations, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain important details of the TruDisk laser series and process relevant features of the system, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Controlling a microdisk laser by local refractive index perturbation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liew, Seng Fatt; Redding, Brandon; Cao, Hui, E-mail: hui.cao@yale.edu

2016-02-01

We demonstrate a simple yet effective approach of controlling lasing in a semiconductor microdisk by photo-thermal effect. A continuous wave green laser beam, focused onto the microdisk perimeter, can enhance or suppress lasing in different cavity modes, depending on the position of the focused beam. Its main effect is a local modification of the refractive index of the disk, which results in an increase in the power slope of some lasing modes and a decrease of others. The boundary roughness breaks the rotational symmetry of a circular disk, allowing the lasing process to be tuned by varying the green beammore » position. Using the same approach, we can also fine tune the relative intensity of a quasi-degenerate pair of lasing modes. Such post-fabrication control, enabled by an additional laser beam, is flexible and reversible, thus enhancing the functionality of semiconductor microdisk lasers.« less

Local heat transfer in turbine disk-cavities. I - Rotor and stator cooling with hub injection of coolant

NASA Astrophysics Data System (ADS)

Bunker, R. S.; Metzger, D. E.; Wittig, S.

1990-06-01

Detailed radial heat-transfer coefficient distributions applicable to the cooling of disk-cavity regions of gas turbines are obtained experimentally from local heat-transfer data on both the rotating and stationary surfaces of a parallel-geometry disk-cavity system. Attention is focused on the hub injection of a coolant over a wide range of parameters including disk rotational Reynolds numbers of 200,000 to 50,000, rotor/stator spacing-to-disk ratios of 0.025 to 0.15, and jet mass flow rates between 0.10 and 0.40 times the turbulent pumped flow rate of a free disk. It is shown that rotor heat transfer exhibits regions of impingement and rotational domination with a transition region between, while stator heat transfer displays flow reattachment and convection regions with an inner recirculation zone.

Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Canxing; Jiang, Haotian; Li, Yunpeng

2013-10-07

Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, themore » photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film.« less

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms

PubMed Central

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I.C.O; Artigas, David; Loza-Alvarez, Pablo

2011-01-01

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is modelocked using a quantum-dot semiconductor saturable absorber mirror (SESAM), delivering an average output power of 287 mW, with 1.5 ps pulses at 500 MHz and a central wavelength of 965 nm. Specifically, despite the fact of having long pulses and high repetition rates, we demonstrate the potential of this laser for Two-Photon Excited Fluorescence (TPEF) imaging of in vivo Caenorhabditis elegans (C. elegans) expressing Green Fluorescent Protein (GFP) in a set of neuronal processes and cell bodies. Efficient TPEF imaging is achieved due to the fact that this wavelength matches the peak of the two-photon action cross section of this widely used fluorescent marker. The SDL extended versatility is shown by presenting Second Harmonic Generation images of pharynx, uterus, body wall muscles and its potential to be used to excite other different commercial dyes. Importantly this non-expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices. PMID:21483599

Surface plasmon-mediated energy transfer of electrically-pumped excitons

DOEpatents

An, Kwang Hyup; Shtein, Max; Pipe, Kevin P.

2015-08-25

An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye adjacent the outer surface of the second electrode such that the second electrode is disposed between the dye and the active organic semiconductor. A voltage applied by the power source across the first and second electrodes causes energy to couple from decaying dipoles into surface plasmon polariton modes, which then evanescently couple to the dye to cause the light to be emitted.

Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor

NASA Astrophysics Data System (ADS)

Hori, Masahiro; Tsuchiya, Toshiaki; Ono, Yukinori

2017-01-01

Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 103 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.

High-energy ultra-short pulse thin-disk lasers: new developments and applications

NASA Astrophysics Data System (ADS)

Michel, Knut; Klingebiel, Sandro; Schultze, Marcel; Tesseit, Catherine Y.; Bessing, Robert; Häfner, Matthias; Prinz, Stefan; Sutter, Dirk; Metzger, Thomas

2016-03-01

We report on the latest developments at TRUMPF Scientific Lasers in the field of ultra-short pulse lasers with highest output energies and powers. All systems are based on the mature and industrialized thin-disk technology of TRUMPF. Thin Yb:YAG disks provide a reliable and efficient solution for power and energy scaling to Joule- and kW-class picosecond laser systems. Due to its efficient one dimensional heat removal, the thin-disk exhibits low distortions and thermal lensing even when pumped under extremely high pump power densities of 10kW/cm². Currently TRUMPF Scientific Lasers develops regenerative amplifiers with highest average powers, optical parametric amplifiers and synchronization schemes. The first few-ps kHz multi-mJ thin-disk regenerative amplifier based on the TRUMPF thindisk technology was developed at the LMU Munich in 20081. Since the average power and energy have continuously been increased, reaching more than 300W (10kHz repetition rate) and 200mJ (1kHz repetition rate) at pulse durations below 2ps. First experiments have shown that the current thin-disk technology supports ultra-short pulse laser solutions >1kW of average power. Based on few-picosecond thin-disk regenerative amplifiers few-cycle optical parametric chirped pulse amplifiers (OPCPA) can be realized. These systems have proven to be the only method for scaling few-cycle pulses to the multi-mJ energy level. OPA based few-cycle systems will allow for many applications such as attosecond spectroscopy, THz spectroscopy and imaging, laser wake field acceleration, table-top few-fs accelerators and laser-driven coherent X-ray undulator sources. Furthermore, high-energy picosecond sources can directly be used for a variety of applications such as X-ray generation or in atmospheric research.

An original valveless artificial heart providing pulsatile flow tested in mock circulatory loops.

PubMed

Tozzi, Piergiorgio; Maertens, Audrey; Emery, Jonathan; Joseph, Samuel; Kirsch, Matthias; Avellan, François

2017-11-24

We present the test bench results of a valveless total artificial heart that is potentially compatible with the pediatric population. The RollingHeart is a valveless volumetric pump generating pulsatile flow. It consists of a single spherical cavity divided into 4 chambers by 2 rotating disks. The combined rotations of both disks produce changes in the volumes of the 4 cavities (suction and ejection). The blood enters/exits the spherical cavity through 4 openings that are symmetrical to the fixed rotation axis of the first disk.Mock circulatory system: The device pumps a 37% glycerin solution through 2 parallel circuits, simulating the pulmonary and systemic circulations. Flow rates are acquired with a magnetic inductive flowmeter, while pressure sensors collect pressure in the left and right outflow and inflow tracts.In vitro test protocol: The pump is run at speeds ranging from 20 to 180 ejections per minute. The waveform of the pressure generated at the inflow and outflow of the 4 chambers and the flow rate in the systemic circulation are measured. At an ejection rate of 178 min-1, the RollingHeart pumps 5.3 L/min for a systemic maximal pressure gradient of 174 mmHg and a pulmonary maximal pressure gradient of 75 mmHg. The power input was 14 W, corresponding to an efficiency of 21%. The RollingHeart represents a new approach in the domain of total artificial heart. This preliminary study endorses the feasibility of a single valveless device acting as a total artificial heart.

Dual-pumped nondegenerate four-wave mixing in semiconductor laser with a built-in external cavity

NASA Astrophysics Data System (ADS)

Wu, Jian-Wei; Qiu, Qi; Hyub Won, Yong

2017-04-01

In this paper, a semiconductor laser system consisting of a conventional multimode Fabry-Pérot laser diode with a built-in external cavity is presented and demonstrated. More than two resonance modes, whose peak levels are significantly higher than other residual modes, are simultaneously supported and output by adjusting the bias current and operating temperature of the active region. Based on this device, dual-pumped nondegenerate four-wave mixing—in which two pump waves and a single signal wave are simultaneously fed into the laser, and the injection power and wavelength of the injected pump and signal waves are changed—is observed and discussed thoroughly. The results show that while the wavelengths of pump wave A and signal wave S are kept constant, the other pump wave B jumps from about 1535 nm to 1578 nm, generating conversion signals with changed wavelengths. The achieved conversion bandwidth between the primary signal and the converted signal waves is broadly tunable in the range of several terahertz frequencies. Both the conversion efficiency and optical signal-to-noise ratio of the newly generated conversion signals are adopted to evaluate the performance of the proposed four-wave mixing process, and are strongly dependent on the wavelength and power of the injected waves. Here, the attained maximum conversion efficiency and optical signal-to-noise ratio are close to -22 dB and 15 dB, respectively.

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

NASA Astrophysics Data System (ADS)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

Navier-Stokes analysis of a liquid rocket engine disk cavity

NASA Technical Reports Server (NTRS)

Benjamin, Theodore G.; Mcconnaughey, Paul K.

1991-01-01

This paper presents a Navier-Stokes analysis of hydrodynamic phenomena occurring in the aft disk cavity of a liquid rocket engine turbine. The cavity analyzed in the Space Shuttle Main Engine Alternate Turbopump currently being developed by NASA and Pratt and Whitney. Comparison of results obtained from the Navier-Stokes code for two rotating disk datasets available in the literature are presented as benchmark validations. The benchmark results obtained using the code show good agreement relative to experimental data, and the turbine disk cavity was analyzed with comparable grid resolution, dissipation levels, and turbulence models. Predicted temperatures in the cavity show that little mixing of hot and cold fluid occurs in the cavity and the flow is dominated by swirl and pumping up the rotating disk.

Piston manometer as an absolute standard for vacuum-gage calibration in the range 2 to 500 millitorr

NASA Technical Reports Server (NTRS)

Warshawsky, I.

1972-01-01

A thin disk is suspended, with very small annular clearance, in a cylindrical opening in the base plate of a calibration chamber. A continuous flow of calibration gas passes through the chamber and annular opening to a downstream high vacuum pump. The ratio of pressures on the two faces of the disk is very large, so that the upstream pressure is substantially equal to net force on the disk divided by disk area. This force is measured with a dynamometer that is calibrated in place with dead weights. A probable error of + or - (0.2 millitorr plus 0.2 percent) is attainable when downstream pressure is known to 10 percent.

Ignition of a Combustible Atmosphere by Incandescent Carbon Wear Particles

NASA Technical Reports Server (NTRS)

Buckley, Donald H.; Swikert, Max A.; Johnson, Robert L.

1960-01-01

A study was made to determine whether carbon wear particles from carbon elements in sliding contact with a metal surface were sufficiently hot to cause ignition of a combustible atmosphere. In some machinery, electric potential differences and currents may appear at the carbon-metal interface. For this reason the effect of these voltages and currents on the ability of carbon wear particles to cause ignition was evaluated. The test specimens used in the investigation were carbon vanes taken from a fuel pump and flat 21-inch-diameter 2 metal disks (440-C stainless steel) representing the pump housing. During each experiment a vane was loaded against a disk with a 0.5-pound force, and the disk was rotated to give a surface speed of 3140 feet per minute. The chamber of the apparatus that housed the vane and the disk was filled with a combustible mixture of air and propane. Various voltages and amperages were applied across the vane-disk interface. Experiments were conducted at temperatures of 75, 350, 400, and 450 F. Fires were produced by incandescent carbon wear particles obtained at conditions of electric potential as low as 106 volts and 0.3 ampere at 400 F. Ignitions were obtained only with carbon wear particles produced with an electric potential across the carbon-vane-disk interface. No ignitions were obtained with carbon wear particles produced in the absence of this potential; also, the potential difference produced no ignitions in the absence of carbon wear particles. A film supplement showing ignition by incandescent wear particles is available.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Computer model for quasioptic waveguide lasers

NASA Astrophysics Data System (ADS)

Wenzel, H.; Wünsche, H. J.

1988-11-01

A description is given of a numerical model of a semiconductor laser with a quasioptic waveguide (index guide). This model can be used on a personal computer. The model can be used to find the radiation field distributions in the vertical and lateral directions, the pump currents at the threshold, and also to solve dynamic rate equations.

Sputtered pin amorphous silicon semi-conductor device and method therefor

DOEpatents

Moustakas, Theodore D.; Friedman, Robert A.

1983-11-22

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

High-power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Ryba, Tracey; Holzer, Marco

2012-03-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With about 2,000 high power disk lasers installations, and a demand upwards of 1,000 lasers per year, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain recent advances in disk laser technology and process relevant features of the laser, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Organization of the Topical Meeting on Tunable Solid State Lasers Held in North Falmouth, Massachusetts on 1-3 May 1989

DTIC Science & Technology

1989-08-30

nm to produce blue light at 455 nm (Figure 1). A 20 Hz doubled Nd:YAG pump laser emitting up to 150 mJ at 532 nm 147 WA4-2 was used to resonantly...pumped by a diode laser, then in addition to the processes of Fig. 1, excited state absorption of the pump light from both 4I13,/z and 4I3112 may be...are visible and UV systems pumped at wavelengths that are available from semiconductor diode lasers and infrared emitting systems having high slope

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djara, V.; Cherkaoui, K.; Negara, M. A.

2015-11-28

An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g}more » measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.« less

Pump-probe spectroscopy in organic semiconductors: monitoring fundamental processes of relevance in optoelectronics.

PubMed

Cabanillas-Gonzalez, Juan; Grancini, Giulia; Lanzani, Guglielmo

2011-12-08

In this review we highlight the contribution of pump-probe spectroscopy to understand elementary processes taking place in organic based optoelectronic devices. The techniques described in this article span from conventional pump-probe spectroscopy to electromodulated pump-probe and the state-of-the-art confocal pump-probe microscopy. The article is structured according to three fundamental processes (optical gain, charge photogeneration and charge transport) and the contribution of these techniques on them. The combination of these tools opens up new perspectives for assessing the role of short-lived excited states on processes lying underneath organic device operation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Four wave mixing oscillation in a semiconductor microcavity: generation of two correlated polariton populations.

PubMed

Romanelli, M; Leyder, C; Karr, J Ph; Giacobino, E; Bramati, A

2007-03-09

We demonstrate a novel kind of polariton four wave mixing oscillation. Two pump polaritons scatter towards final states that emit two beams of equal intensity, separated both spatially and in polarization with respect to the pumps. The measurement of the intensity fluctuations of the emitted light demonstrates that the final states are strongly correlated.

Tunable Infrared Semiconductor Lasers

DTIC Science & Technology

2013-12-20

stripe to different positions of an addressable chirped, location-dependent period grating to select the different lasing wavelengths. Interferometric...grating or vernier effects. Our tuning mechanism is to shift the pump stripe to different positions of an addressable chirped, location-dependent period... stripe is applied and the lateral direction is the perpendicular direction across the pump stripe and parallel to the grating lines.  The chirped

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Use of a photothermoplastic disk in memories based on one-dimensional holograms

NASA Astrophysics Data System (ADS)

Gulanyan, É. Kh; Mikaélyan, A. L.; Molchanova, L. V.; Sidorov, Vladimir A.; Fedorov, I. V.

1989-08-01

An analysis was made of the results of multichannel recording of one-dimensional holograms in a reusable photothermoplastic carrier, particularly in the form of a disk. It was found experimentally that in development and erasure of optical data recorded in a photothermoelastic carrier one could use not only heating by an electric current, but also heating by YAG:Nd laser radiation (λ = 1.06 μm) or semiconductor laser radiation (λ = 0.82 μm).

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

2014-04-15

A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.« less

Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walters, Diane M; Antony, Lucas; de Pablo, Juan

High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

NASA Astrophysics Data System (ADS)

Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

2018-02-01

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of < 40 kHz have been achieved. These developments offer a portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

Rotary Drum Separator and Pump for the Sabatier Carbon Dioxide Reduction System

NASA Technical Reports Server (NTRS)

Holder, Don; Fort, James; Barone, Michael; Murdoch, Karen

2005-01-01

A trade study conducted in 2001 selected a rotary disk separator as the best candidate to meet the requirements for an International Space Station (ISS) Carbon Dioxide Reduction Assembly (CRA). The selected technology must provide micro-gravity gasfliquid separation and pump the liquid from 10 psia at the gasfliquid interface to 18 psia at the wastewater bus storage tank. The rotary disk concept, which has pedigree in other systems currently being built for installation on the ISS, failed to achieve the required pumping head within the allotted power. The separator discussed in this paper is a new design that was tested to determine compliance with performance requirements in the CRA. The drum separator and pump @SP) design is similar to the Oxygen Generator Assembly (OGA) Rotary Separator Accumulator (RSA) in that it has a rotating assembly inside a stationary housing driven by a integral internal motor. The innovation of the DSP is the drum shaped rotating assembly that acts as the accumulator and also pumps the liquid at much less power than its predecessors. In the CRA application, the separator will rotate at slow speed while accumulating water. Once full, the separator will increase speed to generate sufficient head to pump the water to the wastewater bus. A proof-of- concept (POC) separator has been designed, fabricated and tested to assess the separation efficiency and pumping head of the design. This proof-of-concept item was flown aboard the KC135 to evaluate the effectiveness of the separator in a microgravity environment. This separator design has exceeded all of the performance requirements. The next step in the separator development is to integrate it into the Sabatier Carbon Dioxide Reduction System. This will be done with the Sabatier Engineering Development Unit at the Johnson Space Center.

Spin Dynamics in Novel Materials Systems

NASA Astrophysics Data System (ADS)

Yu, Howard

Spintronics and organic electronics are fields that have made considerable advances in recent years, both in fundamental research and in applications. Organic materials have a number of attractive properties that enable them to complement applications traditionally fulfilled by inorganic materials, while spintronics seeks to take advantage of the spin degree of freedom to produce new applications. My research is aimed at combining these two fields to develop organic materials for spintronics use. My thesis is divided into three primary projects centered around an organic-based semiconducting ferrimagnet, vanadium tetracyanoethylene. First, we investigated the transport characteristics of a hybrid organic-inorganic heterostructure. Semiconductors form the basis of the electronics industry, and there has been considerable effort put forward to develop organic semiconductors for applications like organic light-emitting diodes and organic thin film transistors. Working with hybrid organic-inorganic semiconductor device structures allows us to potentially take advantage of the infrastructure that has already been developed for silicon and other inorganic semiconductors. This could potentially pave the way for a new class of active hybrid devices with multifunctional behavior. Second, we investigated the magnetic resonance characteristics of V[TCNE]x, in multiple measurement schemes and exploring the effect of temperature, frequency, and chemical tuning. Recently, the spintronics community has shifted focus from static electrical spin injection to various dynamic processes, such as spin pumping and thermal effects. Spin pumping in particular is an intriguing way to generate pure spin currents via magnetic resonance that has attracted a high degree of interest, with the FMR linewidth being an important metric for spin injection. Furthermore, we can potentially use these measurements to probe the magnetic properties as we change the physical properties of the materials by chemically tuning the organic ligand. We are therefore interested in exploring the resonance properties of this materials system to lay the groundwork for future spin pumping applications. Third, we have made preliminary measurements of spin pumping in hybrid and all-organic bilayer structures. As mentioned above, FMR-driven spin pumping is method for generating pure spin currents with no associated charge motion. This can be detected in a number of ways, one of which is monitoring the FMR characteristics of two ferromagnets in close contact, where spins injected from one magnet into the other changes the linewidth. In conjunction with the magnetic resonance measurements, we have started to investigate the FMR properties of these bilayer systems.

Stimulated emission and spontaneous loss pump-probe microscopy for background removal

NASA Astrophysics Data System (ADS)

Das, Subir; Ho, Bo-Wei; Kao, Fu-Jen

2018-02-01

In this work, we have established a double modulation lock-in detection technique using two semiconductor laser diodes in stimulated emission based pump-probe microscopy. By modulating the pump and probe beams at two different frequencies, f1 and f2, the signal is then recovered with the sum frequency, (f1+ f2), so as to minimize the leak-through noise due to the spontaneous emission caused by the pump beam. In this way, the DC background that is often attributed to the stimulated emission is effectively removed. Our technique has implemented in ATTO647N fluorescent dye which is applicable for many biological applications.

Advanced Photonic Sensors Enabled by Semiconductor Bonding

DTIC Science & Technology

2010-05-31

a dry scroll backing pump to maintain the high differential pressure between the UV gun and the sample/analysis chamber. We also replaced the...semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such...year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system

Local heat transfer in turbine disk-cavities. II - Rotor cooling with radial location injection of coolant

NASA Astrophysics Data System (ADS)

Bunker, R. S.; Metzger, D. E.; Wittig, S.

1990-06-01

The detailed radial distributions of rotor heat-transfer coefficients for three basic disk-cavity geometries applicable to gas turbines are presented. The coefficients are obtained over a range of parameters including disk rotational Reynolds numbers of 200,000 to 50,000, rotor/stator spacing-to-disk ratios of 0.025 to 0.15, and jet mass flow rates between 0.10 and 0.40 times the turbulent pumped flow rate of a free disk. The effects of a parallel rotor are analyzed, and strong variations in local Nusselt numbers for all but the rotational speed are pointed out and compared with the associated hub-injection data from a previous study. It is demonstrated that the overall rotor heat transfer is optimized by either the hub injection or radial location injection of a coolant, dependent on the configuration.

Palm-top-size, 1.5 kW peak-power, and femtosecond (160 fs) diode-pumped mode-locked Yb+3:KY(WO4)2 solid-state laser with a semiconductor saturable absorber mirror.

PubMed

Yamazoe, Shogo; Katou, Masaki; Adachi, Takashi; Kasamatsu, Tadashi

2010-03-01

We report a palm-top-size femtosecond diode-pumped mode-locked Yb(+3):KY(WO(4))(2) solid-state laser with a semiconductor saturable absorber mirror utilizing soliton mode locking for shortening the cavity to 50 mm. An average output power of 680 mW and a pulse width of 162 fs were obtained at 1045 nm with a repetition rate of 2.8 GHz, which led to a peak power of 1.5 kW. Average power fluctuations of a modularized laser source were found to be +/-10% for the free-running 3000 h operation and +/-1% for the power-controlled 2000 h operation.

Collaborative research in tunneling and field emission pumped surface wave local oscillators and amplifiers for infrared and submillimeter wavelengths under director's discretionary fund

NASA Technical Reports Server (NTRS)

Gustafson, T. K.

1982-01-01

Progress is reported in work towards the development of surface wave sources for the infrared and sub-millimeter portion of the spectrum to be based upon electron pumping by tunneling electrons in metal-barrier-metal or metal-barrier-semiconductor devices. Tunneling phenomena and the coupling of radiation to tunnel junctions were studied. The propagation characteristics of surface electro-magnetic modes in metal-insulator-p(++) semiconductor structures as a function of frequency were calculated. A model for the gain process based upon Tucker's formalism was developed and used to estimate what low frequency gain might be expected from such structures. The question of gain was addressed from a more fundamental viewpoint using the method of Lasher and Stern.

Methods and apparatus of entangled photon generation using four-wave mixing

DOEpatents

Camacho, Ryan

2016-02-23

A non-linear optical device is provided. The device comprises an optical disk or ring microresonator fabricated from a material that exhibits an optical nonlinearity able to produce degenerate four-wave mixing (FWM) in response to a pump beam having a pump frequency in a specified effective range. The microresonator is conformed to exhibit an angular group velocity minimum at a pump frequency within the specified effective range such that there is zero angular group velocity dispersion at the pump frequency. We refer to such a pump frequency as the "zero dispersion frequency". In embodiments, excitation of the resonator by a pump beam of sufficient intensity at the zero-dispersion frequency causes the resonator to emit a frequency comb of entangled photon pairs wherein the respective frequencies in each pair are symmetrically placed about the zero-dispersion frequency.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

PubMed

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

NASA Astrophysics Data System (ADS)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

NASA Astrophysics Data System (ADS)

Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

2017-12-01

Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

International Conference on the Methods of Aerophysical Research 98 "ICMAR 98". Proceedings, Part 1

DTIC Science & Technology

1998-01-01

pumping air through device and airdrying due to vapour condensation on cooled surfaces. Fig. 1 In this report, approximate estimates are presented...picture is used for flow field between disks and for water vapor condensation on cooled moving surfaces. Shown in Fig. 1 is a simplified flow...frequency of disks rotation), thus, breaking away from channel walls. Regarding condensation process, a number of usual simplifying assumptions is made

Diode pumped solid state kilohertz disk laser system for time-resolved combustion diagnostics under microgravity at the drop tower Bremen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, Volker; Paa, Wolfgang; Triebel, Wolfgang

We describe a specially designed diode pumped solid state laser system based on the disk laser architecture for combustion diagnostics under microgravity (μg) conditions at the drop tower in Bremen. The two-stage oscillator-amplifier-system provides an excellent beam profile (TEM{sub 00}) at narrowband operation (Δλ < 1 pm) and is tunable from 1018 nm to 1052 nm. The laser repetition rate of up to 4 kHz at pulse durations of 10 ns enables the tracking of processes on a millisecond time scale. Depending on the specific issue it is possible to convert the output radiation up to the fourth harmonic aroundmore » 257 nm. The very compact laser system is integrated in a slightly modified drop capsule and withstands decelerations of up to 50 g (>11 ms). At first the concept of the two-stage disk laser is briefly explained, followed by a detailed description of the disk laser adaption to the drop tower requirements with special focus on the intended use under μg conditions. In order to demonstrate the capabilities of the capsule laser as a tool for μg combustion diagnostics, we finally present an investigation of the precursor-reactions before the droplet ignition using 2D imaging of the Laser Induced Fluorescence of formaldehyde.« less

78 FR 51737 - Notice of Issuance of Final Determination Concerning Certain Hard Disk Drives and Self-Encrypting...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-21

... the HDA incorporate semiconductor, magnetic, mechanical, and manufacturing process design into an..., mechanical surface design and manufacturing process design. It takes approximately [xxx] hours to design... brand names ``Barracuda'' and ``Desktop''. HDDs are designed in the United States and assembled either...

Inelastic tunnel diodes

NASA Technical Reports Server (NTRS)

Anderson, L. M. (Inventor)

1984-01-01

Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

Picosecond Electronic Relaxations In Amorphous Semiconductors

NASA Astrophysics Data System (ADS)

Tauc, Jan

1983-11-01

Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.

High Power Mid Wave Infrared Semiconductor Lasers

DTIC Science & Technology

2006-06-15

resonance and the gain spectrum. The devices were grown using solid source molecular beam epitaxy (MBE) in a V80 reactor. Two side polished, undoped...verify the inherent low activation energy. N-type and P-type AISb, and various compositions of InxAl 1xSb, were grown by solid-source molecular beam ...level monitoring. Advances in epitaxial growth of semiconductor materials have allowed the development of Arsenic- free optically-pumped MWIR lasers on

Concept of the solar-pumped laser-photovoltaics combined system and its application to laser beam power feeding to electric vehicles

NASA Astrophysics Data System (ADS)

Motohiro, Tomoyoshi; Takeda, Yasuhiko; Ito, Hiroshi; Hasegawa, Kazuo; Ikesue, Akio; Ichikawa, Tadashi; Higuchi, Kazuo; Ichiki, Akihisa; Mizuno, Shintaro; Ito, Tadashi; Yamada, Noboru; Nath Luitel, Hom; Kajino, Tsutomu; Terazawa, Hidetaka; Takimoto, Satoshi; Watanabe, Kemmei

2017-08-01

We have developed a compact solar-pumped laser (µSPL) employing an off-axis parabolic mirror with an aperture of 76.2 mm diameter and an yttrium aluminum garnet (YAG) ceramic rod of φ1 mm × 10 mm doped with 1% Nd and 0.1% Cr as a laser medium. The laser oscillation wavelength of 1.06 µm, just below the optical absorption edge of Si cells, is suitable for photoelectric conversion with minimal thermal loss. The concept of laser beam power feeding to an electric vehicle equipped with a photovoltaic panel on the roof was proposed by Ueda in 2010, in which the electricity generated by solar panels over the road is utilized to drive a semiconductor laser located on each traffic signal along the road. By substituting this solar-electricity-driven semiconductor laser with a solar-pumped laser, the energy loss of over 50% in converting the solar electricity to a laser beam can be eliminated. The overall feasibility of this system in an urban area such as Tokyo was investigated.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

PubMed

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

Thermodynamic performance of multi-stage gradational lead screw vacuum pump

NASA Astrophysics Data System (ADS)

Zhao, Fan; Zhang, Shiwei; Sun, Kun; Zhang, Zhijun

2018-02-01

As a kind of dry mechanical vacuum pump, the twin-screw vacuum pump has an outstanding pumping performance during operation, widely used in the semiconductor industry. Compared with the constant lead screw (CLS) vacuum pump, the gradational lead screw (GLS) vacuum pump is more popularly applied in recent years. Nevertheless, not many comparative studies on the thermodynamic performance of GLS vacuum pump can be found in the literature. Our study focuses on one type of GLS vacuum pump, the multi-stage gradational lead screw (MGLS) vacuum pump, gives a detailed description of its construction and illustrates it with the drawing. Based on the structural analysis, the thermodynamic procedure is divided into four distinctive processes, including sucking process, transferring (compressing) process, backlashing process and exhausting process. The internal mechanism of each process is qualitatively illustrated and the mathematical expressions of seven thermodynamic parameters are given under the ideal situation. The performance curves of MGLS vacuum pump are plotted by MATLAB software and compared with those of the CLS vacuum pump in the same case. The results can well explain why the MGLS vacuum pump has more favorable pumping performance than the CLS vacuum pump in saving energy, reducing noise and heat dissipation.

Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

NASA Astrophysics Data System (ADS)

Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

2018-05-01

We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

PubMed

Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

2007-07-01

We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

Encapsulated high frequency (235 kHz), high-Q (100 k) disk resonator gyroscope with electrostatic parametric pump

NASA Astrophysics Data System (ADS)

Ahn, C. H.; Nitzan, S.; Ng, E. J.; Hong, V. A.; Yang, Y.; Kimbrell, T.; Horsley, D. A.; Kenny, T. W.

2014-12-01

In this paper, we explore the effects of electrostatic parametric amplification on a high quality factor (Q > 100 000) encapsulated disk resonator gyroscope (DRG), fabricated in <100> silicon. The DRG was operated in the n = 2 degenerate wineglass mode at 235 kHz, and electrostatically tuned so that the frequency split between the two degenerate modes was less than 100 mHz. A parametric pump at twice the resonant frequency is applied to the sense axis of the DRG, resulting in a maximum scale factor of 156.6 μV/(°/s), an 8.8× improvement over the non-amplified performance. When operated with a parametric gain of 5.4, a minimum angle random walk of 0.034°/√h and bias instability of 1.15°/h are achieved, representing an improvement by a factor of 4.3× and 1.5×, respectively.

Resonance spiking by periodic loss in the double-sided liquid cooling disk oscillator

NASA Astrophysics Data System (ADS)

Nie, Rongzhi; She, Jiangbo; Li, Dongdong; Li, Fuli; Peng, Bo

2017-03-01

A double-sided liquid cooling Nd:YAG disk oscillator working at a pump repetition rate of 20 Hz is demonstrated. The output energy of 376 mJ is realized, corresponding to the optical-optical efficiency of 12.8% and the slope efficiency of 14%. The pump pulse width is 300 µs and the laser pulse width is 260 µs. Instead of being a damped signal, the output of laser comprises undamped spikes. A periodic intra-cavity loss was found by numerical analysis, which has a frequency component near the eigen frequency of the relaxation oscillation. Resonance effect will induce amplified spikes even though the loss fluctuates in a small range. The Shark-Hartmann sensor was used to investigate the wavefront aberration induced by turbulent flow and temperature gradient. According to the wavefront and fluid mechanics analysis, it is considered that the periodic intra-cavity loss can be attributed to turbulent flow and temperature gradient.

Signatures of Hot Molecular Hydrogen Absorption from Protoplanetary Disks. I. Non-thermal Populations

NASA Astrophysics Data System (ADS)

Hoadley, Keri; France, Kevin; Arulanantham, Nicole; Loyd, R. O. Parke; Kruczek, Nicholas

2017-09-01

The environment around protoplanetary disks (PPDs) regulates processes that drive the chemical and structural evolution of circumstellar material. We perform a detailed empirical survey of warm molecular hydrogen (H2) absorption observed against H I-Lyα (Lyα: λ1215.67) emission profiles for 22 PPDs, using archival Hubble Space Telescope ultraviolet (UV) spectra to identify H2 absorption signatures and quantify the column densities of H2 ground states in each sightline. We compare thermal equilibrium models of H2 to the observed H2 rovibrational level distributions. We find that, for the majority of targets, there is a clear deviation in high-energy states (T exc ≳ 20,000 K) away from thermal equilibrium populations (T(H2) ≳ 3500 K). We create a metric to estimate the total column density of non-thermal H2 (N(H2)nLTE) and find that the total column densities of thermal (N(H2)) and N(H2)nLTE correlate for transition disks and targets with detectable C IV-pumped H2 fluorescence. We compare N(H2) and N(H2)nLTE to circumstellar observables and find that N(H2)nLTE correlates with X-ray and far-UV luminosities, but no correlations are observed with the luminosities of discrete emission features (e.g., Lyα, C IV). Additionally, N(H2) and N(H2)nLTE are too low to account for the H2 fluorescence observed in PPDs, so we speculate that this H2 may instead be associated with a diffuse, hot, atomic halo surrounding the planet-forming disk. We create a simple photon-pumping model for each target to test this hypothesis and find that Lyα efficiently pumps H2 levels with T exc ≥ 10,000 K out of thermal equilibrium.

Capsule- and disk-filter procedure

USGS Publications Warehouse

Skrobialowski, Stanley C.

2016-01-01

Capsule and disk filters are disposable, self-contained units composed of a pleated or woven filter medium encased in a polypropylene or other plastic housing that can be connected inline to a sample-delivery system (such as a submersible or peristaltic pump) that generates sufficient pressure (positive or negative) to force water through the filter. Filter media are available in several pore sizes, but 0.45 µm is the pore size used routinely for most studies at this time. Capsule or disk filters (table 5.2.1.A.1) are required routinely for most studies when filtering samples for trace-element analyses and are recommended when filtering samples for major-ion or other inorganic-constituent analyses.

Highly efficient and high-power diode-pumped femtosecond Yb:LYSO laser

NASA Astrophysics Data System (ADS)

Tian, Wenlong; Wang, Zhaohua; Zhu, Jiangfeng; Zheng, Lihe; Xu, Jun; Wei, Zhiyi

2017-04-01

A diode-pumped high-power femtosecond Yb:LYSO laser with high efficiency is demonstrated. With a semiconductor saturable absorber mirror for passive mode-locking and a Gires-Tournois interferometer mirror for intracavity dispersion compensation, stable mode-locking pulses of 297 fs duration at 1042 nm were obtained. The maximum average power of 3.07 W was realized under 5.17 W absorbed pump power, corresponding to as high as 59.4% opt-opt efficiency. The single pulse energy and peak power are about 35.5 nJ and 119.5 kW, respectively.

Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-07-09

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Bottom head to shell junction assembly for a boiling water nuclear reactor

DOEpatents

Fife, Alex Blair; Ballas, Gary J.

1998-01-01

A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening.

Bottom head to shell junction assembly for a boiling water nuclear reactor

DOEpatents

Fife, A.B.; Ballas, G.J.

1998-02-24

A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening. 5 figs.

Nonlinear Optical Studies of the Optical and Electronic Properties of Semiconductor Heterostructures

DTIC Science & Technology

1990-05-14

then the linewidth is determined Note added in proof Since this paper was first submit- by the relaxation rates of states 1 and 2 as shown in Fig. ted ...DETUNING U) (C) " (d)z 100 KHz z 0 -40 -20 0 20 40 FORWARD PUMP-PROBE DETUNING 00 c~cJ LL Wun -jV) 4!sujul ~u0) (a) 5 GHZ 6- C 0() CI 0 Backward Pump

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

THE EVOLUTION OF INNER DISK GAS IN TRANSITION DISKS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoadley, K.; France, K.; McJunkin, M.

2015-10-10

Investigating the molecular gas in the inner regions of protoplanetary disks (PPDs) provides insight into how the molecular disk environment changes during the transition from primordial to debris disk systems. We conduct a small survey of molecular hydrogen (H{sub 2}) fluorescent emission, using 14 well-studied Classical T Tauri stars at two distinct dust disk evolutionary stages, to explore how the structure of the inner molecular disk changes as the optically thick warm dust dissipates. We simulate the observed Hi-Lyman α-pumped H{sub 2} disk fluorescence by creating a 2D radiative transfer model that describes the radial distributions of H{sub 2} emissionmore » in the disk atmosphere and compare these to observations from the Hubble Space Telescope. We find the radial distributions that best describe the observed H{sub 2} FUV emission arising in primordial disk targets (full dust disk) are demonstrably different than those of transition disks (little-to-no warm dust observed). For each best-fit model, we estimate inner and outer disk emission boundaries (r{sub in} and r{sub out}), describing where the bulk of the observed H{sub 2} emission arises in each disk, and we examine correlations between these and several observational disk evolution indicators, such as n{sub 13–31}, r{sub in,} {sub CO}, and the mass accretion rate. We find strong, positive correlations between the H{sub 2} radial distributions and the slope of the dust spectral energy distribution, implying the behavior of the molecular disk atmosphere changes as the inner dust clears in evolving PPDs. Overall, we find that H{sub 2} inner radii are ∼4 times larger in transition systems, while the bulk of the H{sub 2} emission originates inside the dust gap radius for all transitional sources.« less

Evaluation of the electroosmotic medium pump system for preparative disk gel electrophoresis.

PubMed

Hayakawa, M; Hosogi, Y; Takiguchi, H; Saito, S; Shiroza, T; Shibata, Y; Hiratsuka, K; Kiyama-Kishikawa, M; Abiko, Y

2001-01-15

This paper describes an improved electroosmotic elution system for preparative sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) based on the epochal idea of H. V. Tan et al. (Nucleic Acids Res. 1988, 16, 1921-1930). In this elution system, a semipermeable membrane, mounted under the gel terminal end, works as the elution pump as well as the partition of the elution chamber. We refer to this system as the "electroosmotic medium pump system." Operation of the constructed apparatus (3.6 cm i.d. disk gel column) and resolution of the protein bands were examined by separation of the model protein mixture (bovine serum albumin (BSA), ovalbumin, bovine carbonic anhydrase, soybean trypsin inhibitor) and purification of the membrane protein, dipeptidyl peptidase IV (DPP IV). The Spectra/Por 7 dialysis membrane provided a better flow profile for the elution buffer. The four model proteins of the protein mixture were able to be completely separated from each other and recovered without dilution. The maximum protein concentration of eluate achieved was 93 mg/ml, when applying a single component, BSA fraction V, as a sample. Furthermore, the multifunctional ectoenzyme, DPP IV, was purified in a single step. Copyright 2001 Academic Press.

Fracture control of H-O engine components. [titanium tin alloy fuel pump impellers

NASA Technical Reports Server (NTRS)

Ryder, J. T.

1977-01-01

An investigation was made to obtain the material characterization and fatigue crack propagation data necessary to establish the salient characteristics of a Ti-6Al-2.5Sn(ELI) alloy fuel pump impeller to be used in a cryogenic service environment. Testing variables considered were: coupon orientation, frequency, load range ratio, and temperature. Data analysis correlated crack propagation data from conventional laboratory coupons with data from a parallel sided rotating disk used to model rotor stresses. Four major design recommendations when bore regions of fuel pump impellers to be operated in cryogenic environments are to be relatively highly stressed are discussed.

MECHANISM FOR EXCITING PLANETARY INCLINATION AND ECCENTRICITY THROUGH A RESIDUAL GAS DISK

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Yuanyuan; Liu Huigen; Zhao Gang

2013-05-20

According to the theory of Kozai resonance, the initial mutual inclination between a small body and a massive planet in an outer circular orbit is as high as {approx}39. Degree-Sign 2 for pumping the eccentricity of the inner small body. Here we show that with the presence of a residual gas disk outside two planetary orbits, the inclination can be reduced to as low as a few degrees. The presence of the disk changes the nodal precession rates and directions of the planet orbits. At the place where the two planets achieve the same nodal processing rate, vertical secular resonancemore » (VSR) occurs so that the mutual inclination of the two planets will be excited, which might further trigger the Kozai resonance between the two planets. However, in order to pump an inner Jupiter-like planet, the conditions required for the disk and the outer planet are relatively strict. We develop a set of evolution equations, which can fit the N-body simulation quite well but can be integrated within a much shorter time. By scanning the parameter spaces using the evolution equations, we find that a massive planet (10 M{sub J} ) at 30 AU with an inclination of 6 Degree-Sign to a massive disk (50 M{sub J} ) can finally enter the Kozai resonance with an inner Jupiter around the snowline. An inclination of 20 Degree-Sign of the outer planet to the disk is required for flipping the inner one to a retrograde orbit. In multiple planet systems, the mechanism can happen between two nonadjacent planets or can inspire a chain reaction among more than two planets. This mechanism could be the source of the observed giant planets in moderate eccentric and inclined orbits, or hot Jupiters in close-in, retrograde orbits after tidal damping.« less

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP

NASA Astrophysics Data System (ADS)

Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for 〈Sz 〉 , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

PubMed

Wheeler, Dustin D; Willmering, Matthew M; Sesti, Erika L; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J; Hayes, Sophia E

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈S z 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, E g . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, S opt (E ph ). Incorporating this revised element into the expression for 〈S z 〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects. Copyright © 2016 Elsevier Inc. All rights reserved.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henn, T.; Kiessling, T., E-mail: tobias.kiessling@physik.uni-wuerzburg.de; Ossau, W.

We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast “white light” supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables themore » investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.« less

Solid-state semiconductor optical cryocooler based on CdS nanobelts.

PubMed

Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

2014-08-13

We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

Dynamics of Single-Photon Emission from Electrically Pumped Color Centers

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Agio, Mario; Fedyanin, Dmitry Yu.

2017-08-01

Low-power, high-speed, and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum-communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates; however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron and single-photon processes in semiconductors.

Realizing high-quality ultralarge momentum states and ultrafast topological transitions using semiconductor hyperbolic metamaterials

DOE PAGES

Campione, Salvatore; Liu, Sheng; Luk, Ting S.; ...

2015-08-05

We employ both the effective medium approximation (EMA) and Bloch theory to compare the dispersion properties of semiconductor hyperbolic metamaterials (SHMs) at mid-infrared frequencies and metallic hyperbolic metamaterials (MHMs) at visible frequencies. This analysis reveals the conditions under which the EMA can be safely applied for both MHMs and SHMs. We find that the combination of precise nanoscale layering and the longer infrared operating wavelengths puts the SHMs well within the effective medium limit and, in contrast to MHMs, allows for the attainment of very high photon momentum states. Additionally, SHMs allow for new phenomena such as ultrafast creation ofmore » the hyperbolic manifold through optical pumping. Furthermore, we examine the possibility of achieving ultrafast topological transitions through optical pumping which can photo-dope appropriately designed quantum wells on the femtosecond time scale.« less

Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

PubMed Central

Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

2016-01-01

A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

Electron-nuclear spin dynamics of Ga centers in GaAsN dilute nitride semiconductors probed by pump-probe spectroscopy

NASA Astrophysics Data System (ADS)

Sandoval-Santana, J. C.; Ibarra-Sierra, V. G.; Azaizia, S.; Carrère, H.; Bakaleinikov, L. A.; Kalevich, V. K.; Ivchenko, E. L.; Marie, X.; Amand, T.; Balocchi, A.; Kunold, A.

2018-03-01

We propose an experimental procedure to track the evolution of electronic and nuclear spins in Ga2+ centers in GaAsN dilute semiconductors. The method is based on a pump-probe scheme that enables to monitor the time evolution of the three components of the electronic and nuclear spin variables. In contrast to other characterization methods, as nuclear magnetic resonance, this one only needs moderate magnetic fields (B≈ 10 mT), and does not require microwave irradiation. Specifically, we carry out a series of tests for different experimental conditions in order to optimize the procedure for maximum sensitivity in the measurement of the circular degree of polarization. Based on previous experimental results and the theoretical calculations presented here, we estimate that the method could yield a time resolution of about 10ps.

Well pump

DOEpatents

Ames, Kenneth R.; Doesburg, James M.

1987-01-01

A well pump includes a piston and an inlet and/or outlet valve assembly of special structure. Each is formed of a body of organic polymer, preferably PTFE. Each includes a cavity in its upper portion and at least one passage leading from the cavity to the bottom of the block. A screen covers each cavity and a valve disk covers each screen. Flexible sealing flanges extend upwardly and downwardly from the periphery of the piston block. The outlet valve block has a sliding block and sealing fit with the piston rod.

Emergency Plan for Sandy Lake Dam and Reservoir

DTIC Science & Technology

1987-06-01

UTFLOW 0I J" I - " -I I 0 5 I0 15 20 25 30 TIME IN DAYS p CT WITHOUT FAILURE ELEVATION HYDROGRAPHS -1235 -!230 -1225 >z DESIGN POOL ELEVATION iui LiL...harrowing, fertilizing , digging sprigs, hauling sprigs, scattering sprigs, disking, seeding and watering. Typical crew: Riprap - 1 crew leader and 6 to...LEVEL Name of Resource Type of Resource Address Phone Number Brisson Pump Company Pump Distributor 2359 E. Cowern Place (612) 777-3317 N. St. Paul, MN

Optoelectronic Devices Based on Novel Semiconductor Structures

DTIC Science & Technology

2006-06-14

superlattices 4. TEM study and band -filling effects in quantum-well dots 5. Improvements on tuning ranges and output powers for widely-tunable THz sources...the pump power increases the relative strength for the QW emission in the QWD sample also increases. Eventually at the sufficiently- high pump power ...Ahopelto, Appl. Phys. Lett. 66, 2364 (1995). 5. A monochromatic and high - power THz source tunable in the ranges of 2.7-38.4 ptm and 58.2-3540 ptm for

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Ultrafast Optical Modulation of Second- and Third-Harmonic Generation from Cut-Disk-Based Metasurfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sartorello, Giovanni; Olivier, Nicolas; Zhang, Jingjing

2016-08-17

We design and fabricate a metasurface composed of gold cut-disk resonators that exhibits a strong coherent nonlinear response. We experimentally demonstrate all-optical modulation of both second- and third-harmonic signals on a subpicosecond time scale. Pump probe experiments and numerical models show that the observed effects are due to the ultrafast response of the electronic excitations in the metal under external illumination. These effects pave the way for the development of novel active nonlinear metasurfaces with controllable and switchable coherent nonlinear response.

Single-shot optical recorder with sub-picosecond resolution and scalable record length on a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muir, R.; Heebner, J.

In this study, we demonstrate a novel, single-shot recording technology for transient optical signals. A resolution of 0.4 ps over a record length of 54 ps was demonstrated. Here, a pump pulse crossing through a signal samples a diagonal “slice” of space–time, enabling a camera to record spatially the time content of the signal. Unlike related X (2)-based cross-correlation techniques, here the signal is sampled through optically pumped carriers that modify the refractive index of a silicon wafer. Surrounding the wafer with birefringent retarders enables two time-staggered, orthogonally polarized signal copies to probe the wafer. Recombining the copies at amore » final crossed polarizer destructively interferes with them, except during the brief stagger window, where a differential phase shift is incurred. This enables the integrating response of the rapidly excited but persistent carriers to be optically differentiated. Lastly, this sampling mechanism has several advantages that enable scaling to long record lengths, including making use of large, inexpensive semiconductor wafers, eliminating the need for phase matching, broad insensitivity to the spectral and angular properties of the pump, and overall hardware simplicity.« less

Radio-over-fiber system with octuple frequency optical millimeter-wave signal generation using dual-parallel Mach-Zehnder modulator based on four-wave mixing in semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhou, Hui; Zeng, Yuting; Chen, Ming; Shen, Yunlong

2018-03-01

We have proposed a scheme of radio-over-fiber (RoF) system employing a dual-parallel Mach-Zehnder modulator (DP-MZM) based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). In this scheme, the pump and the signal are generated by properly adjusting the direct current bias, modulation index of the DP-MZM, and the phase difference between the sub-MZMs. Because of the pump and the signal deriving from the same optical wave, the polarization states of the two lightwaves are copolarized. The single-pump FWM is polarization insensitive. After FWM and optical filtering, the optical millimeter-wave with octuple frequency is generated. About 40-GHz RoF system with a 2.5-Gbit / s signal is implemented by numerical simulation; the result shows that it has a good performance after the signal is transmitted over 40-km single-mode fiber. Then, the effects of the SOA's injection current and the carrier-to-sideband ratio on the system performance are discussed by simulation, and the optimum value for the system is obtained.

Single-shot optical recorder with sub-picosecond resolution and scalable record length on a semiconductor wafer

DOE PAGES

Muir, R.; Heebner, J.

2017-10-24

In this study, we demonstrate a novel, single-shot recording technology for transient optical signals. A resolution of 0.4 ps over a record length of 54 ps was demonstrated. Here, a pump pulse crossing through a signal samples a diagonal “slice” of space–time, enabling a camera to record spatially the time content of the signal. Unlike related X (2)-based cross-correlation techniques, here the signal is sampled through optically pumped carriers that modify the refractive index of a silicon wafer. Surrounding the wafer with birefringent retarders enables two time-staggered, orthogonally polarized signal copies to probe the wafer. Recombining the copies at amore » final crossed polarizer destructively interferes with them, except during the brief stagger window, where a differential phase shift is incurred. This enables the integrating response of the rapidly excited but persistent carriers to be optically differentiated. Lastly, this sampling mechanism has several advantages that enable scaling to long record lengths, including making use of large, inexpensive semiconductor wafers, eliminating the need for phase matching, broad insensitivity to the spectral and angular properties of the pump, and overall hardware simplicity.« less

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

The Exciton-Polariton Dispersion Law under the Action of Strong Pumping in the Region of the M-Band of Luminescence

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Nad'kin, L. Yu.; Markov, D. A.

2018-04-01

The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the M-band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.

Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms

NASA Astrophysics Data System (ADS)

Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

2011-03-01

Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

A computerized system to evaluate volumetric infusion pumps.

PubMed

Kobayashi, S; Ogata, T

1992-01-01

A computerized system was developed to examine the performance characteristics of infusion pumps. This system collects solution delivered by an infusion pump through an intravenous needle into a collection vessel. Using an inductor-type weight sensor and a semiconductor type of strain-gauge pressure sensor, the weight of the collection vessel and the pressure at the needle were monitored over a specific period (the sampling time), and changes in pressure, flow rate, and volume of fluid were calculated. This system was applied to five volumetric infusion pumps with different pumping mechanisms. Test conditions involved two different solutions, two sizes of needle gauge, and seven flow rates, for a total of 28 measurements per pump. Results showed considerable variation in the infusion pumps' performances based on differences in these indices. Use of an inductance weight sensor as a means to evaluate gravimetric performance appears to be an improvement over conventional methods, which use analytical balances for data generation. The results indicate that this system will be useful in evaluating the performances of commercially available infusion pumps as well as those in development.

Systems of Multiple Planets

NASA Astrophysics Data System (ADS)

Marcy, G. W.; Fischer, D. A.; Butler, R. P.; Vogt, S. S.

To date, 10 stars are known which harbor two or three planets. These systems reveal secular and mean motion resonances in some systems and consist of widely separated, eccentric orbits in others. Both of the triple planet systems, namely Upsilon And and 55 Cancri, exhibit evidence of resonances. The two planets orbiting GJ 876 exhibit both mean-motion and secular resonances and they perturb each other so strongly that the evolution of the orbits is revealed in the Doppler measurements. The common occurrence of resonances suggests that delicate dynamical processes often shape the architecture of planetary systems. Likely processes include planet migration in a viscous disk, eccentricity pumping by the planet-disk interaction, and resonance capture of two planets. We find a class of "hierarchical" double-planet systems characterized by two planets in widely separated orbits, defined to have orbital period ratios greater than 5 to 1. In such systems, resonant interactions are weak, leaving high-order interactions and Kozai resonances plausibly important. We compare the planets that are single with those in multiple systems. We find that neither the two mass distributions nor the two eccentricity distributions are significantly different. This similarity in single and multiple systems suggests that similar dynamical processes may operate in both. The origin of eccentricities may stem from a multi-planet past or from interactions between planets and disk. Multiple planets in resonances can pump their eccentricities pumping resulting in one planet being ejected from the system or sent into the star, leaving a (more massive) single planet in an eccentric orbit. The distribution of semimajor axes of all known extrasolar planets shows a rise toward larger orbits, portending a population of gas-giant planets that reside beyond 3 AU, arguably in less perturbed, more circular orbits.

Blue-green upconversion laser

DOEpatents

Nguyen, D.C.; Faulkner, G.E.

1990-08-14

A blue-green laser (450--550 nm) uses a host crystal doped with Tm[sup 3+]. The Tm[sup 3+] is excited through upconversion by a red pumping laser and an IR pumping laser to a state which transitions to a relatively lower energy level through emissions in the blue-green band, e.g., 450.20 nm at 75 K. The exciting laser may be tunable dye lasers or may be solid-state semiconductor laser, e.g., GaAlAs and InGaAlP. 3 figs.

Blue-green upconversion laser

DOEpatents

Nguyen, Dinh C.; Faulkner, George E.

1990-01-01

A blue-green laser (450-550 nm) uses a host crystal doped with Tm.sup.3+. The Tm.sup.+ is excited through upconversion by a red pumping laser and an IR pumping laser to a state which transitions to a relatively lower energy level through emissions in the blue-green band, e.g., 450.20 nm at 75 K. The exciting laser may be tunable dye lasers or may be solid-state semiconductor laser, e.g., GaAlAs and InGaAlP.

Plasmon-polariton distributed-feedback laser pumped by a fast drift current in graphene

NASA Astrophysics Data System (ADS)

Zolotovskii, Igor O.; Dadoenkova, Yuliya S.; Moiseev, Sergey G.; Kadochkin, Aleksei S.; Svetukhin, Vyacheslav V.; Fotiadi, Andrei A.

2018-05-01

We propose a model of a slow surface plasmon-polariton distributed-feedback laser with pump by drift current. The amplification in the dielectric-semiconducting film-dielectric waveguide structure is created by fast drift current in the graphene layer, placed at the semiconductor/dielectric interface. The feedback is provided due to a periodic change in the thickness of the semiconducting film. We have shown that in such a system it is possible to achieve surface plasmon-polariton generation in the terahertz region.

A Passively Q-Switched, CW-Pumped Fe:ZnSe Laser

DTIC Science & Technology

2014-03-01

passively Q-switched microchip lasers using semiconductor saturable absorbers,” J. Opt. Soc. Amer. B, Opt. Phys., vol. 16, no. 3, pp. 376–388, Mar. 1999...204 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 50, NO. 3, MARCH 2014 A Passively Q-Switched, CW-Pumped Fe:ZnSe Laser Jonathan W. Evans, Patrick A...Berry, and Kenneth L. Schepler Abstract— We report the demonstration of high-average-power passively Q-switched laser oscillation from Fe2+ ions in zinc

Fast Optoelectronic Switching Processes in Surface-Emitting Semiconductor Lasers and Nonlinear Etalons

DTIC Science & Technology

1992-05-01

molecular beam epitaxy (MWE). The crystal growers have been persuaded of the importance of this work, and several substrate rotation arrangements and In...RPG VCSELS for optical pumping at 800 wm GaAs/GaAlAs RPA etalons without epitaxial reflectors. The first three wafers were destined for above- and below...of MOCVD-grown GaAs/GaAIAs RPO- VCSEL samples with 20 quantum wells and epitaXial multilayer high-reflectivity stacks with R=3.995 and 0.999 was pumped

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Invited Review Article: Review of centrifugal microfluidic and bio-optical disks

PubMed Central

Nolte, David D.

2009-01-01

Spinning biodisks have advantages that make them attractive for specialized biochip applications. The two main classes of spinning biodisks are microfluidic disks and bio-optical compact disks (BioCD). Microfluidic biodisks take advantage of noninertial pumping for lab-on-a-chip devices using noninertial valves and switches under centrifugal and Coriolis forces to distribute fluids about the disks. BioCDs use spinning-disk interferometry, under the condition of common-path phase quadrature, to perform interferometric label-free detection of molecular recognition and binding. The optical detection of bound molecules on a disk is facilitated by rapid spinning that enables high-speed repetitive sampling to eliminate 1∕f noise through common-mode rejection of intensity fluctuations and extensive signal averaging. Multiple quadrature classes have been developed, such as microdiffraction, in-line, phase contrast, and holographic adaptive optics. Thin molecular films are detected through the surface dipole density with a surface height sensitivity for the detection of protein spots that is approximately 1 pm. This sensitivity easily resolves a submonolayer of solid-support immobilized antibodies and their antigen targets. Fluorescence and light scattering provide additional optical detection techniques on spinning disks. Immunoassays have been applied to haptoglobin using protein A∕G immobilization of antibodies and to prostate specific antigen. Small protein spots enable scalability to many spots per disk for high-throughput and highly multiplexed immonoassays. PMID:19895047

Dust Grains and the Luminosity of Circumnuclear Water Masers in Active Galaxies

NASA Technical Reports Server (NTRS)

Collison, Alan J.; Watson, William D.

1995-01-01

In previous calculations for the luminosities of 22 GHz water masers, the pumping is reduced and ultimately quenched with increasing depth into the gas because of trapping of the infrared (approximately equals 30-150 micrometers), spectral line radiation of the water molecule. When the absorption (and reemission) of infrared radiation by dust grains is included, we demonstrate that the pumping is no longer quenched but remains constant with increasing optical depth. A temperature difference between the grains and the gas is required. Such conditions are expected to occur, for example, in the circumnuclear masing environments created by X-rays in active galaxies. Here, the calculated 22 GHz maser luminosities are increased by more than an order of magnitude. Application to the well-studied, circumnuclear masing disk in the galaxy NGC 4258 yields a maser luminosity near that inferred from observations if the observed X-ray flux is assumed to be incident onto only the inner surface of the disk.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

NASA Astrophysics Data System (ADS)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Broadband sensitive pump-probe setup for ultrafast optical switching of photonic nanostructures and semiconductors.

PubMed

Euser, Tijmen G; Harding, Philip J; Vos, Willem L

2009-07-01

We describe an ultrafast time resolved pump-probe spectroscopy setup aimed at studying the switching of nanophotonic structures. Both femtosecond pump and probe pulses can be independently tuned over broad frequency range between 3850 and 21,050 cm(-1). A broad pump scan range allows a large optical penetration depth, while a broad probe scan range is crucial to study strongly photonic crystals. A new data acquisition method allows for sensitive pump-probe measurements, and corrects for fluctuations in probe intensity and pump stray light. We observe a tenfold improvement of the precision of the setup compared to laser fluctuations, allowing a measurement accuracy of better than DeltaR=0.07% in a 1 s measurement time. Demonstrations of the improved technique are presented for a bulk Si wafer, a three-dimensional Si inverse opal photonic bandgap crystal, and z-scan measurements of the two-photon absorption coefficient of Si, GaAs, and the three-photon absorption coefficient of GaP in the infrared wavelength range.

ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

NASA Astrophysics Data System (ADS)

De Jesus, Joel

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of devices. Growth interruptions improvements were evident both by sharper PL peaks on multilayer structures and by narrow and more efficient electroluminescence emission on intersubband devices. By using these techniques, and using materials lattice matched to InP, we then developed the first II-VI based QC detector with high responsivity for 3.5 and 2.5mum IR wavelengths, explored the combination of several detector cores arrangements to make a broadband IR detectors, and achieved a QC broadband detector operating from 3.3 to 6 mum also with high responsivity and high detectivity. For the visible lasers, we have successfully combined distributed Bragg reflectors (DBRs) and resonant cavity MQW structures into a single device to achieve green semiconductor disk lasers (SDL). We also investigated novel strain engineered multiple quantum wells (MQWs) using CdSe and ZnSe strained layers. This last research provided materials with shorter wavelength activity in the IR, achieving absorption as low as 2.5 mum, and visible red emission lattice matched to InP, providing new building blocks for all of the above mentioned devices. Our results demonstrate the outstanding capabilities of the material system, and provide tools and techniques for further development.

Composite Yb:YAG/SiC-prism thin disk laser.

PubMed

Newburgh, G A; Michael, A; Dubinskii, M

2010-08-02

We report the first demonstration of a Yb:YAG thin disk laser wherein the gain medium is intracavity face-cooled through bonding to an optical quality SiC prism. Due to the particular design of the composite bonded Yb:YAG/SiC-prism gain element, the laser beam impinges on all refractive index interfaces inside the laser cavity at Brewster's angles. The laser beam undergoes total internal reflection (TIR) at the bottom of the Yb(10%):YAG thin disk layer in a V-bounce cavity configuration. Through the use of TIR and Brewster's angles, no optical coatings, either anti-reflective (AR) or highly reflective (HR), are required inside the laser cavity. In this first demonstration, the 936.5-nm diode pumped laser performed with approximately 38% slope efficiency at 12 W of quasi-CW (Q-CW) output power at 1030 nm with a beam quality measured at M(2) = 1.5. This demonstration opens up a viable path toward novel thin disk laser designs with efficient double-sided room-temperature heatsinking via materials with the thermal conductivity of copper on both sides of the disk.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Giriraj, E-mail: grsharma@gmail.com; Dad, R. C.; Ghosh, S.

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantlymore » raised and the threshold pump field for the onset of SBS process is lowered.« less

Laser pumping of thyristors for fast high current rise-times

DOEpatents

Glidden, Steven C.; Sanders, Howard D.

2013-06-11

An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.

IV INTERNATIONAL CONFERENCE ON ATOM AND MOLECULAR PULSED LASERS (AMPL'99): Efficient long-pulse XeCl laser with a prepulse formed by an inductive energy storage device

NASA Astrophysics Data System (ADS)

Baksht, E. Kh; Panchenko, Aleksei N.; Tarasenko, Viktor F.

2000-06-01

An efficient electric-discharge XeCl laser is developed, which is pumped by a self-sustained discharge with a prepulse formed by a generator with an inductive energy storage device and a semiconductor current interrupter on a basis of semiconductor opening switch (SOS) diodes. An output energy up to 800 mJ, a pulse length up to 450 ns, and a total laser efficiency of 2.2% were attained by using spark UV preionisation.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

Signatures of Hot Molecular Hydrogen Absorption from Protoplanetary Disks. I. Non-thermal Populations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoadley, Keri; France, Kevin; Arulanantham, Nicole

2017-09-01

The environment around protoplanetary disks (PPDs) regulates processes that drive the chemical and structural evolution of circumstellar material. We perform a detailed empirical survey of warm molecular hydrogen (H{sub 2}) absorption observed against H i-Ly α (Ly α : λ 1215.67) emission profiles for 22 PPDs, using archival Hubble Space Telescope ultraviolet (UV) spectra to identify H{sub 2} absorption signatures and quantify the column densities of H{sub 2} ground states in each sightline. We compare thermal equilibrium models of H{sub 2} to the observed H{sub 2} rovibrational level distributions. We find that, for the majority of targets, there is amore » clear deviation in high-energy states ( T {sub exc} ≳ 20,000 K) away from thermal equilibrium populations ( T (H{sub 2}) ≳ 3500 K). We create a metric to estimate the total column density of non-thermal H{sub 2} ( N (H{sub 2}){sub nLTE}) and find that the total column densities of thermal ( N (H{sub 2})) and N (H{sub 2}){sub nLTE} correlate for transition disks and targets with detectable C iv-pumped H{sub 2} fluorescence. We compare N (H{sub 2}) and N (H{sub 2}){sub nLTE} to circumstellar observables and find that N (H{sub 2}){sub nLTE} correlates with X-ray and far-UV luminosities, but no correlations are observed with the luminosities of discrete emission features (e.g., Ly α , C iv). Additionally, N (H{sub 2}) and N (H{sub 2}){sub nLTE} are too low to account for the H{sub 2} fluorescence observed in PPDs, so we speculate that this H{sub 2} may instead be associated with a diffuse, hot, atomic halo surrounding the planet-forming disk. We create a simple photon-pumping model for each target to test this hypothesis and find that Ly α efficiently pumps H{sub 2} levels with T {sub exc} ≥ 10,000 K out of thermal equilibrium.« less

The interplay of shape and crystalline anisotropies in plasmonic semiconductor nanocrystals

DOE PAGES

Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; ...

2016-05-16

Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influencemore » of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. Furthermore, this new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.« less

75 FR 29723 - Foreign-Trade Zone 29-Louisville, KY; Application for Expansion and Expansion of Manufacturing...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-27

..., plates, filters, bearings, air pumps/compressors, valves, switches, electric motors, tubes/pipes/profiles... electric motors, pinions, magnets, ignition parts, diodes, transistors, resistors, semiconductors, liquid..., starter motors, motor/generator units, alternators, distributors, other static converters, inverter...

Operation of a high-gradient superconducting radio-frequency cavity with a non-evaporable getter pump

DOE PAGES

Ciovati, G.; Geng, R.; Lushtak, Y.; ...

2016-10-28

The use of non-evaporable getter (NEG) pumps in particle accelerators has increased significantly over the past few years because of their large pumping speed, particularly for hydrogen, compared to the size of the pump. A concern about using such pumps in superconducting radio-frequency (SRF) accelerators is the possibility of shedding particulates which could then migrate into the SRF cavities and produce field emission, therefore degrading the cavity performance. One option to mitigate such issue is to use sintered getter materials which intrinsically offer superior mechanical and particle retention properties. In this article we present the results from cryogenic RF testsmore » of a high-gradient SRF cavity after being evacuated several times with an NEG pump equipped with sintered getter disks and placed in close proximity to the cavity. Here, the results showed that the cavity performance was not affected by the pump up to the quench gradient of 34 MV/m. As a result of this study, two such NEG pumps have been installed next to a cryomodule in the CEBAF accelerator to maintain ultra-high vacuum in the SRF cryomodule and two adjacent warm girder sections.« less

15 ps quasi-continuously pumped passively mode-locked highly doped Nd:YAG laser in bounce geometry

NASA Astrophysics Data System (ADS)

Jelínek, M., Jr.; Kubeček, V.

2011-09-01

A semiconductor saturable absorber mirror mode-locking of a quasi-continuously pumped laser based on 2.4 at.% Nd:YAG slab in a bounce geometry was demonstrated and investigated. Output mode-locked and Q-switched train containing 15 pulses with total energy of 500 μJ was generated directly from the oscillator. The measured 15 ps pulse duration and excellent temporal stability ±2 ps are the best values for pure passively mode-locked and Q-switched Nd:YAG laser with the pulse pumping. Furthermore, using the cavity dumping technique, single 19 ps pulse with energy of 25 μJ was extracted directly from the oscillator.

Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode.

PubMed

Klinkhammer, Sönke; Liu, Xin; Huska, Klaus; Shen, Yuxin; Vanderheiden, Sylvia; Valouch, Sebastian; Vannahme, Christoph; Bräse, Stefan; Mappes, Timo; Lemmer, Uli

2012-03-12

The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources.

Micromachined peristaltic pump

NASA Technical Reports Server (NTRS)

Hartley, Frank T. (Inventor)

1998-01-01

A micromachined pump including a channel formed in a semiconductor substrate by conventional processes such as chemical etching. A number of insulating barriers are established in the substrate parallel to one another and transverse to the channel. The barriers separate a series of electrically conductive strips. An overlying flexible conductive membrane is applied over the channel and conductive strips with an insulating layer separating the conductive strips from the conductive membrane. Application of a sequential voltage to the series of strips pulls the membrane into the channel portion of each successive strip to achieve a pumping action. A particularly desirable arrangement employs a micromachined push-pull dual channel cavity employing two substrates with a single membrane sandwiched between them.

HiLASE: development of fully diode pumped disk lasers with high average power

NASA Astrophysics Data System (ADS)

Divoky, M.; Smrz, M.; Chyla, M.; Sikocinski, P.; Severova, P.; Novák, O.; Huynh, J.; Nagisetty, S. S.; Miura, T.; Liberatore, C.; Pilař, J.; Slezak, O.; Sawicka, M.; Jambunathan, V.; Gemini, L.; Vanda, J.; Svabek, R.; Endo, A.; Lucianetti, A.; Rostohar, D.; Mason, P. D.; Phillips, P. J.; Ertel, K.; Banerjee, S.; Hernandez-Gomez, C.; Collier, J. L.; Mocek, T.

2015-02-01

An overview of Czech national R&D project HiLASE (High average power pulsed LASEr) is presented. The HiLASE project aims at development of pulsed DPSSL for hi-tech industrial applications. HiLASE will be a user oriented facility with several laser systems with output parameters ranging from a few picosecond pulses with energy of 5 mJ to 0.5 J and repetition rate of 1-100 kHz (based on thin disk technology) to systems with 100 J output energy in nanosecond pulses with repetition rate of 10 Hz (based on multi-slab technology).

Study and Development of an Air Conditioning System Operating on a Magnetic Heat Pump Cycle

NASA Technical Reports Server (NTRS)

Wang, Pao-Lien

1991-01-01

This report describes the design of a laboratory scale demonstration prototype of an air conditioning system operating on a magnetic heat pump cycle. Design parameters were selected through studies performed by a Kennedy Space Center (KSC) System Simulation Computer Model. The heat pump consists of a rotor turning through four magnetic fields that are created by permanent magnets. Gadolinium was selected as the working material for this demonstration prototype. The rotor was designed to be constructed of flat parallel disks of gadolinium with very little space in between. The rotor rotates in an aluminum housing. The laboratory scale demonstration prototype is designed to provide a theoretical Carnot Cycle efficiency of 62 percent and a Coefficient of Performance of 16.55.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems

NASA Astrophysics Data System (ADS)

Hughes, Stephen; Agarwal, Girish S.

2017-02-01

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems.

PubMed

Hughes, Stephen; Agarwal, Girish S

2017-02-10

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

NASA Astrophysics Data System (ADS)

Li, Jianfeng; Luo, Hongyu; He, Yulian; Liu, Yong; Luo, Binbin; Sun, Zhongyuan; Zhang, Lin; Turitsyn, Sergei K.

2014-05-01

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

NASA Astrophysics Data System (ADS)

Li, J. F.; Luo, H. Y.; He, Y. L.; Liu, Y.; Zhang, L.; Zhou, K. M.; Rozhin, A. G.; Turistyn, S. K.

2014-06-01

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 µJ with a pulse width of 1.68 µs and signal-to-noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 µm. To the best of our knowledge, this is the first 3 µm region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

NASA Astrophysics Data System (ADS)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

NASA Astrophysics Data System (ADS)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

E-beam-pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Microgravity

NASA Image and Video Library

1996-01-01

Ted Brunzie and Peter Mason observe the float package and the data rack aboard the DC-9 reduced gravity aircraft. The float package contains a cryostat, a video camera, a pump and accelerometers. The data rack displays and record the video signal from the float package on tape and stores acceleration and temperature measurements on disk.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

NASA Astrophysics Data System (ADS)

Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

2018-02-01

A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

NASA Technical Reports Server (NTRS)

Alfano, R. R.; Wang, W. B.; Mohaidat, J. M.; Cavicchia, M. A.; Raisky, O. Y.

1995-01-01

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Quantifying stochasticity in the dynamics of delay-coupled semiconductor lasers via forbidden patterns.

PubMed

Tiana-Alsina, Jordi; Buldú, Javier M; Torrent, M C; García-Ojalvo, Jordi

2010-01-28

We quantify the level of stochasticity in the dynamics of two mutually coupled semiconductor lasers. Specifically, we concentrate on a regime in which the lasers synchronize their dynamics with a non-zero lag time, and the leader and laggard roles alternate irregularly between the lasers. We analyse this switching dynamics in terms of the number of forbidden patterns of the alternate time series. The results reveal that the system operates in a stochastic regime, with the level of stochasticity decreasing as the lasers are pumped further away from their lasing threshold. This behaviour is similar to that exhibited by a single semiconductor laser subject to external optical feedback, as its dynamics shifts from the regime of low-frequency fluctuations to coherence collapse. This journal is © 2010 The Royal Society

Diode-Pumped Organo-Lead Halide Perovskite Lasing in a Metal-Clad Distributed Feedback Resonator.

PubMed

Jia, Yufei; Kerner, Ross A; Grede, Alex J; Brigeman, Alyssa N; Rand, Barry P; Giebink, Noel C

2016-07-13

Organic-inorganic lead halide perovskite semiconductors have recently reignited the prospect of a tunable, solution-processed diode laser, which has the potential to impact a wide range of optoelectronic applications. Here, we demonstrate a metal-clad, second-order distributed feedback methylammonium lead iodide perovskite laser that marks a significant step toward this goal. Optically pumping this device with an InGaN diode laser at low temperature, we achieve lasing above a threshold pump intensity of 5 kW/cm(2) for durations up to ∼25 ns at repetition rates exceeding 2 MHz. We show that the lasing duration is not limited by thermal runaway and propose instead that lasing ceases under continuous pumping due to a photoinduced structural change in the perovskite that reduces the gain on a submicrosecond time scale. Our results indicate that the architecture demonstrated here could provide the foundation for electrically pumped lasing with a threshold current density Jth < 5 kA/cm(2) under sub-20 ns pulsed drive.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2

NASA Astrophysics Data System (ADS)

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-01

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO2 thin film grown on a rutile TiO2(0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2.

PubMed

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-11

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO 2 thin film grown on a rutile TiO 2 (0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm; pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

NONLINEAR AND FIBER OPTICS: Transverse traveling pulses in bistable interferometers with competing nonlinearities

NASA Astrophysics Data System (ADS)

Rzhanov, Yu A.; Grigor'yants, A. V.; Balkareĭ, Yu I.; Elinson, M. I.

1990-04-01

A detailed qualitative description is given of the formation and propagation of leading edges of transverse traveling pulses in a bistable semiconductor interferometer with competing concentration and thermal mechanisms of nonlinear refraction. It is shown that, depending on the laser pumping rate and the heat transfer conditions, two types of traveling pulses may exist with elevated and reduced transmission. Each of these may be initiated by a local change in the input intensity of any sign. When the interferometer is pumped by a spatially inhomogeneous, (for example, Gaussian) beam, periodic spontaneous initiation of both types of traveling pulses may take place at the periphery or in the center of a beam. Traveling pulses are modeled numerically under various interferometer pumping conditions.

Decreased oscillation threshold of a continuous-wave OPO using a semiconductor gain mirror.

PubMed

Siltanen, Mikael; Leinonen, Tomi; Halonen, Lauri

2011-09-26

We have constructed a singly resonant, continuous-wave optical parametric oscillator, where the signal beam resonates and is amplified by a semiconductor gain mirror. The gain mirror can significantly decrease the oscillation threshold compared to an identical system with conventional mirrors. The largest idler beam tuning range reached by changing the pump laser wavelength alone is from 3.6 to 4.7 µm. The single mode output power is limited but can be continuously scanned for at least 220 GHz by adding optical components in the oscillator cavity for increased stability. © 2011 Optical Society of America

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F.; Reid, Ray D.

2012-01-01

This invention relates to non-contact spectroscopic methods and apparatus for performing chemical analysis and the ideal wavelengths and sources needed for this analysis. It employs deep ultraviolet (200- to 300-nm spectral range) electron-beam-pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor lightemitting devices, and hollow cathode metal ion lasers. Three achieved goals for this innovation are to reduce the size (under 20 L), reduce the weight [under 100 lb (.45 kg)], and reduce the power consumption (under 100 W). This method can be used in microscope or macroscope to provide measurement of Raman and/or native fluorescence emission spectra either by point-by-point measurement, or by global imaging of emissions within specific ultraviolet spectral bands. In other embodiments, the method can be used in analytical instruments such as capillary electrophoresis, capillary electro-chromatography, high-performance liquid chromatography, flow cytometry, and related instruments for detection and identification of unknown analytes using a combination of native fluorescence and/or Raman spectroscopic methods. This design provides an electron-beampumped semiconductor radiation-producing method, or source, that can emit at a wavelength (or wavelengths) below 300 nm, e.g. in the deep ultraviolet between about 200 and 300 nm, and more preferably less than 260 nm. In some variations, the method is to produce incoherent radiation, while in other implementations it produces laser radiation. In some variations, this object is achieved by using an AlGaN emission medium, while in other implementations a diamond emission medium may be used. This instrument irradiates a sample with deep UV radiation, and then uses an improved filter for separating wavelengths to be detected. This provides a multi-stage analysis of the sample. To avoid the difficulties related to producing deep UV semiconductor sources, a pumping approach has been developed that uses ballistic electron beam injection directly into the active region of a wide bandgap semiconductor material.

Growth and Characterization of Epitaxial Piezoelectric and Semiconductor Films.

DTIC Science & Technology

1980-07-01

quality epitaxial films at low growth rates. This process is limited to films up to a few microns thickness. The aluminum chloride/ ammonia CVD process has... scrubber through a rotary Vacuum pump maintaining Reactions.-DEZ is an electron deficient compound a pressure of about 400 Torr inside the reaction chain

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

Probing active galactic nuclei with H2O megamasers.

PubMed

Moran, J; Greenhill, L; Herrnstein, J; Diamond, P; Miyoshi, M; Nakai, N; Inque, M

1995-12-05

We describe the characteristics of the rapidly rotating molecular disk in the nucleus of the mildly active galaxy NGC4258. The morphology and kinematics of the disk are delineated by the point-like watervapor emission sources at 1.35-cm wavelength. High angular resolution [200 microas where as is arcsec, corresponding to 0.006 parsec (pc) at 6.4 million pc] and high spectral resolution (0.2 km.s-1 or nu/Deltanu = 1.4 x 10(6)) with the Very-Long-Baseline Array allow precise definition of the disk. The disk is very thin, but slightly warped, and is viewed nearly edge-on. The masers show that the disk is in nearly perfect Keplerian rotation within the observable range of radii of 0.13-0.26 pc. The approximately random deviations from the Keplerian rotation curve among the high-velocity masers are approximately 3.5 km.s-1 (rms). These deviations may be due to the masers lying off the midline by about +/-4 degrees or variations in the inclination of the disk by +/-4 degrees. Lack of systematic deviations indicates that the disk has a mass of <4 x 10(6) solar mass (M[symbol: see text]). The gravitational binding mass is 3.5 x 10(7) M[symbol: see text], which must lie within the inner radius of the disk and requires that the mass density be >4 x 10(9) M[symbol: see text].pc-3. If the central mass were in the form of a star cluster with a density distribution such as a Plummer model, then the central mass density would be 4 x 10(12) M[symbol: see text].pc-3. The lifetime of such a cluster would be short with respect to the age of the galaxy [Maoz, E. (1995) Astrophys. J. Lett. 447, L91-L94]. Therefore, the central mass may be a black hole. The disk as traced by the systemic velocity features is unresolved in the vertical direction, indicating that its scale height is <0.0003 pc (hence the ratio of thickness to radius, H/R, is <0.0025). For a disk in hydrostatic equilibrium the quadrature sum of the sound speed and Alfven velocity is <2.5 km.s-1, so that the temperature of the disk must be <1000 K and the toroidal magnetic field component must be <250 mG. If the molecular mass density in the disk is 10(10) cm-3, then the disk mass is approximately 10(4) M[symbol: see text], and the disk is marginally stable as defined by the Toomre stability parameter Q (Q = 6 at the inner edge and 1 at the outer edge). The inward drift velocity is predicted to be <0.007 km.s-1, for a viscosity parameter of 0.1, and the accretion rate is <7 x 10(-5) M[symbol: see text].yr-1. At this value the accretion would be sufficient to power the nuclear x-ray source of 4 x 10(40) ergs-1 (1 erg = 0.1 microJ). The volume of individual maser components may be as large as 10(46) cm3, based on the velocity gradients, which is sufficient to supply the observed luminosity. The pump power undoubtedly comes from the nucleus, perhaps in the form of x-rays. The warp may allow the pump radiation to penetrate the disk obliquely [Neufeld, D. A. & Maloney, P. R. (1995) Astrophys. J. Lett. 447, L17-L19]. A total of 15 H2O megamasers have been identified out of >250 galaxies searched. Galaxy NGC4258 may be the only case where conditions are optimal to reveal a well-defined nuclear disk. Future measurement of proper motions and accelerations for NGC4258 will yield an accurate distance and a more precise definition of the dynamics of the disk

Semiconductor light source with electrically tunable emission wavelength

DOEpatents

Belenky, Gregory [Port Jefferson, NY; Bruno, John D [Bowie, MD; Kisin, Mikhail V [Centereach, NY; Luryi, Serge [Setauket, NY; Shterengas, Leon [Centereach, NY; Suchalkin, Sergey [Centereach, NY; Tober, Richard L [Elkridge, MD

2011-01-25

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

Chen, Hua-Jun; Zhu, Ka-Di

2015-01-01

In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929

Generation of a medium vacuum pressure by using two different pumping methods in the KRISS dynamic flow-control system

NASA Astrophysics Data System (ADS)

Hong, S. S.; Lim, J. Y.; Khan, W.

2014-02-01

Pumping systems with large vacuum chambers have numerous applications in the process industry: for example, mixing of various types of gases as in the semiconductor industry, the calibration of vacuum gauges, the measurement of outgassing rates of various materials in the field of space technology, etc. Most often, these systems are used in the medium vacuum range (10-1 Pa-102 Pa) and in the dynamically-generated pressure mode. We have designed and developed a new dynamic flow system at the KRISS (Korea Research Institute of Standards and Science) that can be used for such applications with reliability in the range from 0.1 Pa - 133 Pa. In this report, the design philosophy, operational procedure and experimental data for the generated stable pressure points in the chamber of the system are discussed. The data consist the pressure points generated in the medium vacuum range while pumping the chamber of the system by using two different methods: first by using a dry scroll pump and then by using a combination of a turbomolecular pump backed by the same scroll pump. The relative standard deviations in the pressure points were calculated and were found to be greater than 1.5% for the scroll pump and less than 0.5% for the turbomolecular pump.

Portable semiconductor disk laser for in vivo tissue monitoring: a platform for the development of clinical applications

NASA Astrophysics Data System (ADS)

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

2011-07-01

Long term in vivo observations at large penetration depths and minimum sample disturbance are some of the key factors that have enabled the study of different cellular and tissue mechanisms. The continuous optimization of these aspects is the main driving force for the development of advanced microscopy techniques such as those based on nonlinear effects. Its wide implementation for general biomedical applications is however, limited as the currently used nonlinear microscopes are based on bulky, maintenance-intensive and expensive excitation sources such as Ti:sapphire ultrafast lasers. We present the suitability of a portable (140x240x70 mm) ultrafast semiconductor disk laser (SDL) source, to be used in nonlinear microscopy. The SDL is modelocked by a quantum-dot semiconductor saturable absorber mirror (SESAM). This enables the source to deliver an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. The laser center wavelength (965 nm) virtually matches the two-photon absorption cross-section of the widely used Green Fluorescent Protein (GFP). This property greatly relaxes the required peak powers, thus maximizing sample viability. This is demonstrated by presenting two-photon excited fluorescence images of GFP labeled neurons and second-harmonic generation images of pharyngeal muscles in living C. elegans nematodes. Our results also demonstrate that this compact laser is well suited for efficiently exciting different biological dyes. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its widespread adoption in biomedical applications.

Self-mode-locking semiconductor disk laser.

PubMed

Gaafar, Mahmoud; Richter, Philipp; Keskin, Hakan; Möller, Christoph; Wichmann, Matthias; Stolz, Wolfgang; Rahimi-Iman, Arash; Koch, Martin

2014-11-17

The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode.

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

NASA Astrophysics Data System (ADS)

Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

2017-02-01

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Large area, surface discharge pumped, vacuum ultraviolet light source

DOEpatents

Sze, Robert C.; Quigley, Gerard P.

1996-01-01

Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm.

PubMed

Coluccelli, Nicola; Lagatsky, Alexander; Di Lieto, Alberto; Tonelli, Mauro; Galzerano, Gianluca; Sibbett, Wilson; Laporta, Paolo

2011-08-15

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps. © 2011 Optical Society of America

Ultra-fast movies of thin-film laser ablation

NASA Astrophysics Data System (ADS)

Domke, Matthias; Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2012-11-01

Ultra-short-pulse laser irradiation of thin molybdenum films from the glass substrate side initiates an intact Mo disk lift off free from thermal effects. For the investigation of the underlying physical effects, ultra-fast pump-probe microscopy is used to produce stop-motion movies of the single-pulse ablation process, initiated by a 660-fs laser pulse. The ultra-fast dynamics in the femtosecond and picosecond ranges are captured by stroboscopic illumination of the sample with an optically delayed probe pulse of 510-fs duration. The nanosecond and microsecond delay ranges of the probe pulse are covered by an electronically triggered 600-ps laser. Thus, the setup enables an observation of general laser ablation processes from the femtosecond delay range up to the final state. A comparison of time- and space-resolved observations of film and glass substrate side irradiation of a 470-nm molybdenum layer reveals the driving mechanisms of the Mo disk lift off initiated by glass-side irradiation. Observations suggest that a phase explosion generates a liquid-gas mixture in the molybdenum/glass interface about 10 ps after the impact of the pump laser pulse. Then, a shock wave and gas expansion cause the molybdenum layer to bulge, while the enclosed liquid-gas mixture cools and condenses at delay times in the 100-ps range. The bulging continues for approximately 20 ns, when an intact Mo disk shears and lifts off at a velocity of above 70 m/s. As a result, the remaining hole is free from thermal effects.

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

PubMed

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Landau quantization effects on hole-acoustic instability in semiconductor plasmas

NASA Astrophysics Data System (ADS)

Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

2017-12-01

The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

Proof of the Feasibility of Coherent and Incoherent Schemes for Pumping a Gamma-ray Laser

DTIC Science & Technology

1992-12-31

the Texas-X was investigated by using metallic indium disks 1.0 cm in diameter and 0.127 mm thick as well as plastic planchettes 5.0 cm in diameter and...Spectral Distribution The spectral distribution was examined by irradiating the full set of the calibration nuclides listed in Table 1. Planchettes

Float Package and the Data Rack aboard the DC-9

NASA Technical Reports Server (NTRS)

1996-01-01

Ted Brunzie and Peter Mason observe the float package and the data rack aboard the DC-9 reduced gravity aircraft. The float package contains a cryostat, a video camera, a pump and accelerometers. The data rack displays and record the video signal from the float package on tape and stores acceleration and temperature measurements on disk.

Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roppo, V.; Charles M. Bowden Research Facility, US Army RDECOM, Redstone Arsenal, Alabama 35803; Cojocaru, C.

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.

Efficient semiconductor multicycle terahertz pulse source

NASA Astrophysics Data System (ADS)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

A Laminar Flow-Based Microfluidic Tesla Pump via Lithography Enabled 3D Printing.

PubMed

Habhab, Mohammed-Baker; Ismail, Tania; Lo, Joe Fujiou

2016-11-23

Tesla turbine and its applications in power generation and fluid flow were demonstrated by Nicholas Tesla in 1913. However, its real-world implementations were limited by the difficulty to maintain laminar flow between rotor disks, transient efficiencies during rotor acceleration, and the lack of other applications that fully utilize the continuous flow outputs. All of the aforementioned limits of Tesla turbines can be addressed by scaling to the microfluidic flow regime. Demonstrated here is a microscale Tesla pump designed and fabricated using a Digital Light Processing (DLP) based 3D printer with 43 µm lateral and 30 µm thickness resolutions. The miniaturized pump is characterized by low Reynolds number of 1000 and a flow rate of up to 12.6 mL/min at 1200 rpm, unloaded. It is capable of driving a mixer network to generate microfluidic gradient. The continuous, laminar flow from Tesla turbines is well-suited to the needs of flow-sensitive microfluidics, where the integrated pump will enable numerous compact lab-on-a-chip applications.

Properties of excited states in organic light emitting diodes and lasers

NASA Astrophysics Data System (ADS)

Giebink, Noel C.

The field of organic semiconductors has grown rapidly over the past decade with the development of light emitting diodes, solar cells, and lasers that promise a new generation of low-cost, flexible optoelectronic devices. In each case, the behavior of molecular excited states, or excitons, is of fundamental importance. The present study explores the nature and interactions of such excited states in the attempt to develop an electrically pumped organic semiconductor laser, and to improve the performance and operational stability of organic light emitting diodes. We begin by investigating intrinsic loss processes in optically pumped organic semiconductor lasers and demonstrate that exciton annihilation implies a fundamental limit that will prevent lasing by electrical injection in currently known materials. Searching for an alternative approach to reach threshold leads us to study metastable geminate charge pairs, where we find that optically generated excitons can be accumulated over time in an external electric field via these intermediate states. Upon field turn-off, the excitons are immediately restored, leading to a sudden burst of excitation density over 30 times higher than that generated by the pump alone. Unfortunately, we identify limitations that have thus far prevented reaching laser threshold with this technique. In a parallel push toward high power density, we investigate the origins of quantum efficiency roll-off in organic light emitting diodes (OLEDs) and find that it is dominated by loss of charge balance in the majority of fluorescent and phosphorescent devices. The second major theme of this work involves understanding the intrinsic modes of OLED operational degradation. Based on extensive modeling and supported directly by experimental evidence, we identify exciton-charge carrier annihilation reactions as a principle degradation pathway. Exploiting the diffusion of triplet excitons, we show that fluorescence and phosphorescence can be combined to increase the operational lifetime of white OLEDs and still retain the potential for unity internal quantum efficiency.

Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface

NASA Astrophysics Data System (ADS)

Anders, M. A.; Lenahan, P. M.; Lelis, A. J.

2017-12-01

We report on a new electrically detected magnetic resonance (EDMR) approach involving spin dependent charge pumping (SDCP) and spin dependent recombination (SDR) at high (K band, about 16 GHz) and ultra-low (360 and 85 MHz) magnetic resonance frequencies to investigate the dielectric/semiconductor interface in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). A comparison of SDCP and SDR allows for a comparison of deep level defects and defects with energy levels throughout most of the bandgap. Additionally, a comparison of high frequency and ultra-low frequency measurements allows for (1) the partial separation of spin-orbit coupling and hyperfine effects on magnetic resonance spectra, (2) the observation of otherwise forbidden half-field effects, which make EDMR, at least, in principle, quantitative, and (3) the observation of Breit-Rabi shifts in superhyperfine measurements. (Observation of the Breit-Rabi shift helps in both the assignment and the measurement of superhyperfine parameters.) We find that, as earlier work also indicates, the SiC silicon vacancy is the dominating defect in n-MOSFETs with as-grown oxides and that post-oxidation NO anneals significantly reduce their population. In addition, we provide strong evidence that NO anneals result in the presence of nitrogen very close to a large fraction of the silicon vacancies. The results indicate that the presence of nearby nitrogen significantly shifts the silicon vacancy energy levels. Our results also show that the introduction of nitrogen introduces a disorder at the interface. This nitrogen induced disorder may provide at least a partial explanation for the relatively modest improvement in mobility after the NO anneals. Finally, we compare the charge pumping and SDCP response as a function of gate amplitude and charge pumping frequency.

CN rings in full protoplanetary disks around young stars as probes of disk structure

NASA Astrophysics Data System (ADS)

Cazzoletti, P.; van Dishoeck, E. F.; Visser, R.; Facchini, S.; Bruderer, S.

2018-01-01

Aims: Bright ring-like structure emission of the CN molecule has been observed in protoplanetary disks. We investigate whether such structures are due to the morphology of the disk itself or if they are instead an intrinsic feature of CN emission. With the intention of using CN as a diagnostic, we also address to which physical and chemical parameters CN is most sensitive. Methods: A set of disk models were run for different stellar spectra, masses, and physical structures via the 2D thermochemical code DALI. An updated chemical network that accounts for the most relevant CN reactions was adopted. Results: Ring-shaped emission is found to be a common feature of all adopted models; the highest abundance is found in the upper outer regions of the disk, and the column density peaks at 30-100 AU for T Tauri stars with standard accretion rates. Higher mass disks generally show brighter CN. Higher UV fields, such as those appropriate for T Tauri stars with high accretion rates or for Herbig Ae stars or for higher disk flaring, generally result in brighter and larger rings. These trends are due to the main formation paths of CN, which all start with vibrationally excited H_2^* molecules, that are produced through far ultraviolet (FUV) pumping of H2. The model results compare well with observed disk-integrated CN fluxes and the observed location of the CN ring for the TW Hya disk. Conclusions: CN rings are produced naturally in protoplanetary disks and do not require a specific underlying disk structure such as a dust cavity or gap. The strong link between FUV flux and CN emission can provide critical information regarding the vertical structure of the disk and the distribution of dust grains which affects the UV penetration, and could help to break some degeneracies in the SED fitting. In contrast with C2H or c-C3H2, the CN flux is not very sensitive to carbon and oxygen depletion.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires.

PubMed

Yan, Jie-Yun

2018-06-13

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

NASA Astrophysics Data System (ADS)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Efficient upconversion-pumped continuous wave Er3+:LiLuF4 lasers

NASA Astrophysics Data System (ADS)

Moglia, Francesca; Müller, Sebastian; Reichert, Fabian; Metz, Philip W.; Calmano, Thomas; Kränkel, Christian; Heumann, Ernst; Huber, Günter

2015-04-01

We report on detailed spectroscopic investigations and efficient visible upconversion laser operation of Er3+:LiLuF4. This material allows for efficient resonant excited-state-absorption (ESA) pumping at 974 nm. Under spectroscopic conditions without external feedback, ESA at the laser wavelength of 552 nm prevails stimulated emission. Under lasing conditions in a resonant cavity, the high intracavity photon density bleaches the ESA at 552 nm, allowing for efficient cw laser operation. We obtained the highest output power of any room-temperature crystalline upconversion laser. The laser achieves a cw output power of 774 mW at a slope efficiency of 19% with respect to the incident pump power delivered by an optically-pumped semiconductor laser. The absorption efficiency of the pump radiation is estimated to be below 50%. To exploit the high confinement in waveguides for this laser, we employed femtosecond-laser pulses to inscribe a cladding of parallel tracks of modified material into Er3+:LiLuF4 crystals. The core material allows for low-loss waveguiding at pump and laser wavelengths. Under Ti:sapphire pumping at 974 nm, the first crystalline upconversion waveguide laser has been realized. We obtained waveguide-laser operation with up to 10 mW of output power at 553 nm.

Dust distributions in debris disks: effects of gravity, radiation pressure and collisions

NASA Astrophysics Data System (ADS)

Krivov, A. V.; Löhne, T.; Sremčević, M.

2006-08-01

We model a typical debris disk, treated as an idealized ensemble of dust particles, exposed to stellar gravity and direct radiation pressure and experiencing fragmenting collisions. Applying the kinetic method of statistical physics, written in orbital elements, we calculate size and spatial distibutions expected in a steady-state disk, investigate timescales needed to reach the steady state, and calculate mass loss rates. Particular numerical examples are given for the debris disk around Vega. The disk should comprise a population of larger grains in bound orbits and a population of smaller particles in hyperbolic orbits. The cross section area is dominated by the smallest grains that still can stay in bound orbits, for Vega about 10 {μ m} in radius. The size distribution is wavy, implying secondary peaks in the size distribution at larger sizes. The radial profile of the pole-on surface density or the optical depth in the steady-state disk has a power-law index between about -1 and -2. It cannot be much steeper even if dust production is confined to a narrow planetesimal belt, because collisional grinding produces smaller and smaller grains, and radiation pressure pumps up their orbital eccentricities and spreads them outward, which flattens the radial profile. The timescales to reach a steady state depend on grain sizes and distance from the star. For Vega, they are about 1 Myr for grains up to some hundred {μ m} at 100 AU. The total mass of the Vega disk needed to produce the observed amount of micron and submillimeter-sized dust does not exceed several earth masses for an upper size limit of parent bodies of about 1 km. The collisional depletion of the disk occurs on Gyr timescales.

Imaging the motion of electrons in 2D semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Imaging the motion of electrons across semiconductor heterojunctions.

PubMed

Man, Michael K L; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E Laine; Krishna, M Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M; Dani, Keshav M

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Imaging the motion of electrons across semiconductor heterojunctions

NASA Astrophysics Data System (ADS)

Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

2-micron lasing in Tm:Lu2O3 ceramic: initial operation

NASA Astrophysics Data System (ADS)

Vetrovec, John; Filgas, David M.; Smith, Carey A.; Copeland, Drew A.; Litt, Amardeep S.; Briscoe, Eldridge; Schirmer, Ernestina

2018-03-01

We report on initial lasing of Tm:Lu2O3 ceramic laser with tunable output in the vicinity of 2 μm. Tm:Lu2O3 ceramic gain materials offer a much lower saturation fluence than the traditionally used Tm:YLF and Tm:YAG materials. The gain element is pumped by 796 nm diodes via a "2-for-1" crossrelaxation energy transfer mechanism, which enables high efficiency. The high thermal conductivity of the Lu2O3 host ( 18% higher than YAG) in combination with low quantum defect of 20% supports operation at high-average power. Konoshima's ceramic fabrication process overcomes the scalability limits of single crystal sesquioxides. Tm:Lu2O3 offers wide-bandwidth amplification of ultrashort pulses in a chirped-pulse amplification (CPA) system. A laser oscillator was continuously tuned over a 230 nm range from 1890 to 2120 nm while delivering up to 43W QCW output with up to 37% efficiency. This device is intended for initial testing and later seeding of a multi-pass edge-pumped disk amplifier now being developed by Aqwest which uses composite Tm:Lu2O3 disk gain elements.

The Behavior of Warm Molecules in Planet-forming Disks and CHESS: a Pathfinder UV Spectrograph for the LUVOIR Surveyor

NASA Astrophysics Data System (ADS)

Hoadley, Keri; France, Kevin

2017-01-01

Understanding the evolution of gas over the lifetime of protoplanetary disks provides us with important clues about how planet formation mechanisms drive the diversity of exoplanetary systems observed to date. In the first part of my talk, I will discuss how we use emission line observations of molecular hydrogen (H2) in the far-ultraviolet (far-UV) with the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope to study the warm molecular regions (a < 10 AU) of planet-forming disks. We compare the observations with analytic disk models that produce synthetic H2 profiles, and we statistically determine the disk representations that best replicate the data. I will discuss the results of our comparisons and how the modeled radial distributions of H2 in the disk help provide important constraints on the effective density of gas left in the inner disk of protoplanetary disks at various disk evolutionary stages. Finally, I will talk about follow-up studies that look to connect the warm, UV-pumped molecular populations of the inner disk to thermally-excited molecules observed in similar regions of the disk in the near- to mid-IR.In the second part of my talk, I will discuss the observational requirements in the UV and IR band passes to gain further insights into the behavior of the warm, gaseous protoplanetary disk, focusing specifically on a spectrograph concept for the next-generation LUVOIR Surveyor. I will discuss a testbed instrument, the Colorado High-resolution Echelle Stellar Spectrograph (CHESS), built as a demonstration of one component of the LUVOIR spectrograph and new technological improvements to UV optical components for the next generation of near- to far-UV astrophysical observatories. CHESS is a far-UV sounding rocket experiment designed to probe the warm and cool atoms and molecules near sites of recent star formation in the local interstellar medium. I will talk about the science goals, design, research and development (R&D) components, and calibration of the CHESS instrument. I will end by presenting the initial data reduction and results of the flight observations taken during the second launch of CHESS.

CW and femtosecond operation of a diode-pumped Yb:BaY(2)F(8) laser.

PubMed

Galzerano, G; Coluccelli, N; Gatti, D; Di Lieto, A; Tonelli, M; Laporta, P

2010-03-15

We report for the first time on laser action of a diode-pumped Yb:BaY(2)F(8) crystal. Both CW and femtosecond operations have been demonstrated at room-temperature conditions. A maximum output power of 0.56 W, a slope efficiency of 34%, and a tunability range from 1013 to 1067 nm have been obtained in CW regime. Transform-limited pulse trains with a minimum duration of 275 fs, an average power of 40 mW, and a repetition rate of 83 MHz have been achieved in a passive mode-locked regime using a semiconductor saturable absorber mirror.

Zero-lag synchronization and bubbling in delay-coupled lasers.

PubMed

Tiana-Alsina, J; Hicke, K; Porte, X; Soriano, M C; Torrent, M C; Garcia-Ojalvo, J; Fischer, I

2012-02-01

We show experimentally that two semiconductor lasers mutually coupled via a passive relay fiber loop exhibit chaos synchronization at zero lag, and study how this synchronized regime is lost as the lasers' pump currents are increased. We characterize the synchronization properties of the system with high temporal resolution in two different chaotic regimes, namely, low-frequency fluctuations and coherence collapse, identifying significant differences between them. In particular, a marked decrease in synchronization quality develops as the lasers enter the coherence collapse regime. Our high-resolution measurements allow us to establish that synchronization loss is associated with bubbling events, the frequency of which increases with increasing pump current.

Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method

NASA Astrophysics Data System (ADS)

Sasaki, Fumio; Nguyen, Van-Cao; Yanagi, Hisao

2018-03-01

Optically pumped lasing and electroluminescence (EL) have been observed in solution-processed perovskite semiconducting materials of formamidinium lead bromide, CH(NH2)2PbBr3. Microcavities with flat surfaces and sharp edges have been easily obtained by the simple solution process called the “cast-capping method”. The crystals show clear multimode lasing of Fabry-Pérot cavities. The mode intervals are well explained by the optical constants with large dispersions of the materials. We have also fabricated EL devices and obtained clear EL in a single layer of the materials, but the EL intensity has been quenched rapidly.

Spontaneous and superfluid chiral edge states in exciton-polariton condensates

NASA Astrophysics Data System (ADS)

Sigurdsson, H.; Li, G.; Liew, T. C. H.

2017-09-01

We present a scheme of interaction-induced topological band structures based on the spin anisotropy of exciton-polaritons in semiconductor microcavities. We predict theoretically that this scheme allows the engineering of topological gaps, without requiring a magnetic field or strong spin-orbit interaction (transverse electric-transverse magnetic splitting). Under nonresonant pumping we find that an initially topologically trivial system undergoes a topological transition upon the spontaneous breaking of phase symmetry associated with polariton condensation. Under either nonresonant or resonant coherent pumping we find that it is also possible to engineer a topological dispersion that is linear in wave vector—a property associated with polariton superfluidity.

Large area, surface discharge pumped, vacuum ultraviolet light source

DOEpatents

Sze, R.C.; Quigley, G.P.

1996-12-17

Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

Thermal-Wave Microscope

NASA Technical Reports Server (NTRS)

Jones, Robert E.; Kramarchuk, Ihor; Williams, Wallace D.; Pouch, John J.; Gilbert, Percy

1989-01-01

Computer-controlled thermal-wave microscope developed to investigate III-V compound semiconductor devices and materials. Is nondestructive technique providing information on subsurface thermal features of solid samples. Furthermore, because this is subsurface technique, three-dimensional imaging also possible. Microscope uses intensity-modulated electron beam of modified scanning electron microscope to generate thermal waves in sample. Acoustic waves generated by thermal waves received by transducer and processed in computer to form images displayed on video display of microscope or recorded on magnetic disk.

Thermal Analysis of the MC1 Engine Turbopump

NASA Technical Reports Server (NTRS)

Roman, Jose; Turner, Larry D. (Technical Monitor)

2001-01-01

The MC1 Engine turbopump supplied the propellants to the main injector. The turbopump consisted of four parts; lox pump, interpropellant seal package (IPS), RP pump and turbine. The thermal analysis was divided into two 2D finite element models; Housing or stationary parts and rotor or rotating parts. Both models were analyzed at the same boundary conditions using SINDA. The housing model consisted of, lox pump housing, ips housing, RP housing, turbine inlet housing, turbine housing, exit guide vane, heat shield and both bearing outer races. The rotor model consisted of the lox impeller; lox end bearing and id race, RP impeller, and RP bearing and id race, shaft and turbine disk. The objectives of the analysis were to: (1) verified the original design and recommend modifications to it, (2) submitted a thermal environment to support the structural analysis, (3) support the component and engine test program. and (4) to support the X34 vehicle program.

Thermal Analysis of the MCI Engine Turbopump

NASA Technical Reports Server (NTRS)

Roman, Jose

2002-01-01

The MCI Engine turbopump supplied the propellants to the main injector. The turbopump consisted of four parts; lox pump, interpropellant seal package (IPS), RP pump and turbine. The thermal analysis was divided into two 2D finite element models; Housing or stationary parts and rotor or rotating parts. Both models were analyzed at the same boundary conditions using SINDA. The housing model consisted of; lox pump housing, ips housing, RP housing, turbine inlet housing, turbine housing, exit guide vane, heat shield and both bearing outer races. The rotor model consisted of the lox impeller; lox end bearing and id race, RP impeller, and RP bearing and id race, shaft and turbine disk. The objectives of the analysis were to (1) verified the original design and recommend modifications to it, (2) submitted a thermal environment to support the structural analysis, (3) support the component and engine test program and (4) to support the X34 vehicle program.

An optical parametric chirped-pulse amplifier for seeding high repetition rate free-electron lasers

DOE PAGES

Höppner, H.; Hage, A.; Tanikawa, T.; ...

2015-05-15

High repetition rate free-electron lasers (FEL), producing highly intense extreme ultraviolet and x-ray pulses, require new high power tunable femtosecond lasers for FEL seeding and FEL pump-probe experiments. A tunable, 112 W (burst mode) optical parametric chirped-pulse amplifier (OPCPA) is demonstrated with center frequencies ranging from 720–900 nm, pulse energies up to 1.12 mJ and a pulse duration of 30 fs at a repetition rate of 100 kHz. Since the power scalability of this OPCPA is limited by the OPCPA-pump amplifier, we also demonstrate a 6.7–13.7 kW (burst mode) thin-disk OPCPA-pump amplifier, increasing the possible OPCPA output power to manymore » hundreds of watts. Furthermore, third and fourth harmonic generation experiments are performed and the results are used to simulate a seeded FEL with high-gain harmonic generation.« less

Yb:YAG ceramic-based laser driver for Inertial Fusion Energy (IFE)

NASA Astrophysics Data System (ADS)

Vetrovec, John; Copeland, Drew A.; Litt, Amardeep S.

2016-03-01

We report on a new class of laser amplifiers for inertial confinement fusion (ICF) drivers based on a Yb:YAG ceramic disk in an edge-pumped configuration and cooled by a high-velocity gas flow. The Yb lasant offers very high efficiency and low waste heat. The ceramic host material has a thermal conductivity nearly 15-times higher than the traditionally used glass and it is producible in sizes suitable for a typical 10- to 20-kJ driver beam line. The combination of high lasant efficiency, low waste heat, edge-pumping, and excellent thermal conductivity of the host, enable operation at 10 to 20 Hz at over 20% wall plug efficiency while being comparably smaller and less costly than recently considered face-pumped alternative drivers using Nd:glass, Yb:S-FAP, and cryogenic Yb:YAG. Scalability of the laser driver over a broad range of sizes is presented.

Dark solitons in the condensate of exciton polaritons in semiconductor microcavities under nonresonant optical excitation

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Gavrilov, S. S.; Brichkin, A. S.; Larionov, A. V.; Kulakovskii, V. D.

2014-12-01

The first-order spatial correlation function g (1)( r 12) and the polariton density distribution in the condensate of quasi-two-dimensional exciton polaritons formed in a high- Q semiconductor microcavity pillar under nonresonant optical pumping are investigated. It is found that the correlation function in certain regions of the micropillar decreases abruptly with increasing condensate density. It is shown that this behavior of the correlation function is caused by the formation of a localized dark soliton in these regions. A deep minimum of the polariton density and a shift in the phase of the condensate wavefunction by π occur within the soliton localization area.

Electrical Characterization of Semiconductor Materials and Devices

NASA Astrophysics Data System (ADS)

Deen, M.; Pascal, Fabien

Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

NASA Astrophysics Data System (ADS)

Ho, I.-Chen

Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms, electron intervalley scattering and impact ionization of InAs crystals, are observed under the excitation of intense THz field on a sub-picosecond time scale. These two competing mechanisms are demonstrated by changing the impurity doping type of the semiconductors and varying the strength of the THz field. Another investigation of nonlinear carrier dynamics is the observation of coherent polaron oscillation in n-doped semiconductors excited by intense THz pulses. Through modulations of surface reflection with a THz pump/THz probe technique, this work experimentally verifies the interaction between energetic electrons and a phonon field, which has been theoretically predicted by previous publications, and shows that this interaction applies for the acoustic phonon modes. Usually, two transverse acoustic (2TA) phonon responses are inactive in infrared measurement, while they are detectable in second-order Raman spectroscopy. The study of polaron dynamics, with nonlinear THz spectroscopy (in the far-infrared range), provides a unique method to diagnose the overtones of 2TA phonon responses of semiconductors, and therefore incorporates the abilities of both infrared and Raman spectroscopy. This work presents a new milestone in wave-matter interaction and seeks to benefit the industrial applications in high power, small scale devices.

Computational prediction of hemolysis in a centrifugal ventricular assist device.

PubMed

Pinotti, M; Rosa, E S

1995-03-01

This paper describes the use of computational fluid dynamics (CFD) to predict numerically the hemolysis in centrifugal pumps. A numerical hydrodynamical model, based on the full Navier-Stokes equation, was used to obtain the flow in a vaneless centrifugal pump (of corotating disks type). After proper postprocessing, critical zones in the channel were identified by means of two-dimensional color-coded maps of %Hb release. Simulation of different conditions revealed that flow behavior at the entrance region of the channel is the main cause of blood trauma in such devices. A useful feature resulting from the CFD simulation is the visualization of critical flow zones that are impossible to determine experimentally with in vitro hemolysis tests.

Theoretical model and simulations for a cw exciplex pumped alkali laser.

PubMed

Huang, Wei; Tan, Rongqing; Li, Zhiyong; Lu, Xiaochuan

2015-12-14

The Exciplex Pumped Alkali Laser (XPAL) system, which is similar to DPAL (Diode Pumped Alkali vapor Laser), has been demonstrated in mixtures of Cs vapor, Ar, with and without ethane. Unlike DPAL, it uses the broadband absorption blue satellite of the alkali D₂ line, created by naturally occuring collision pairs. For example, Cs-Ar collision pairs have an absorption width which is as wide as the one of commercial semiconductor diode lasers. A continuous wave XPAL four-level theoretical model is presented in this paper. More factors are considered, such as the spectral dependence of pumped laser absorption for broadband pumping and the longitudinal population variation. Some intra-cavity details, such as longitudinal distributions of pumped laser and alkali laser, can also be solved well. The predictions of optical-to-optical efficiency as a function of temperature and pumped laser intensity are presented. The model predicts that there is an optimum value of temperature or pumped laser intensity. The analysis of the influence of cell length on optical-to-optical efficiency shows that a better performance can be achieved when using longer cell. The prediction of influence of Ar concentration and reflectivity of output coupler shows that higher optical-to-optical efficiency could be achieved if lower reflectivity of output coupler and higher Ar concentration are used. The optical-to-optical efficiency as high as 84% achieved by optimizing configuration with the pumped intensity of 5 × 10⁷ W/cm² presented shows that broadband pumped four-level XPAL system has a potential of high optical-to-optical efficiency.

A compact Nd:YAG DPSSL using diamond-cooled technology

NASA Astrophysics Data System (ADS)

Chou, Hsian P.; Wang, Yu-Lin; Hasson, Victor H.; Trainor, Daniel W.

2005-03-01

In our diamond-cooled approach, thin disks of laser gain material, e.g., Nd:YAG, are alternated between thin disks of single crystal synthetic diamond whose heat conductivity is over 2000 W/m-°K. The gain medium is face-pumped (along the optical axis) by the output of laser diode arrays. This optical configuration produces heat transfer from Nd:YAG to the diamond, in the direction of the optical axis, and then heat is rapidly conducted radially outward through the diamond to the cooling fluid circulating at the circumference of the diamond/YAG assembly. This geometry effectively removes the heat from the gain material in a manner that permits the attainment of high power output with excellent beam quality.

Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers

DTIC Science & Technology

2016-03-01

resistance 20 mΩ Ith Threshold current 350 mA Using this partial Taylor expansion in (32), the solution for the doping magnitude is C ≈ √ (2/L) I qAV0...2014. [3] M. Kanskar, T. Earles , T. Goodnough, E. Stiers, D. Botez, and L. J. Mawst, “High power conversion efficiency Al-free diode lasers for pumping

Electrically-Generated Spin Polarization in Non-Magnetic Semiconductors

DTIC Science & Technology

2016-03-31

resolved Faraday rotation data due to electron spin polarization from previous pump pulses was characterized, and an analytic solution for this phase...electron spin polarization was shown to produce nuclear hyperpolarization through dynamic nuclear polarization. Time-resolved Faraday rotation...Distribution approved for public release. 3    Figure 3. Total magnetic field measured using time-resolved Faraday rotation with the electrically

An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires.

PubMed

Baig, Sarwat A; Boland, Jessica L; Damry, Djamshid A; Tan, H Hoe; Jagadish, Chennupati; Joyce, Hannah J; Johnston, Michael B

2017-04-12

Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump-terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of -8 dB. We achieve an extinction of over 13% and a dynamic range of -9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

"Intact" Carrier Doping by Pump-Pump-Probe Spectroscopy in Combination with Interfacial Charge Transfer: A Case Study of CsPbBr3 Nanocrystals.

PubMed

Wang, Junhui; Ding, Tao; Leng, Jing; Jin, Shengye; Wu, Kaifeng

2018-06-21

Carrier doping is important for semiconductor nanocrystals (NCs) as it offers a new knob to tune NCs' functionalities, in addition to size and shape control. Also, extensive studies on NC devices have revealed that under operating conditions NCs are often unintentionally doped with electrons or holes. Thus, it is essential to be able to control the doping of NCs and study the carrier dynamics of doped NCs. The extension of previously reported redox-doping methods to chemically sensitive materials, such as recently introduced perovskite NCs, has remained challenging. We introduce an "intact" carrier-doping method by performing pump-pump-probe transient absorption spectroscopy on NC-acceptor complexes. The first pump pulse is used to trigger charge transfer from the NC to the acceptor, leading to NCs doped with a band edge carrier; the following pump-probe pulses measure the dynamics of carrier-doped NCs. We performed this measurement on CsPbBr 3 NCs and deduced positive and negative trion lifetimes of 220 ± 50 and 150 ± 40 ps, respectively, for 10 nm diameter NCs, both dominated by Auger recombination. It also allowed us to identify randomly photocharged excitons in CsPbBr 3 NCs as positive trions.

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J. R.

1989-01-01

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

NASA Astrophysics Data System (ADS)

Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

2003-03-01

We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

Direct emission of chirality controllable femtosecond LG01 vortex beam

NASA Astrophysics Data System (ADS)

Wang, S.; Zhang, S.; Yang, H.; Xie, J.; Jiang, S.; Feng, G.; Zhou, S.

2018-05-01

Direct emission of a chirality controllable ultrafast LG01 mode vortex optical beam from a conventional z-type cavity design SESAM (SEmiconductor Saturable Absorber Mirror) mode locked LD pumped Yb:Phosphate laser has been demonstrated. A clean 360 fs vortex beam of ˜45.7 mW output power has been achieved. A radial shear interferometer has been built to determine the phase singularity and the wavefront helicity of the ultrafast output laser. Theoretically, it is found that the LG01 vortex beam is obtained via the combination effect of diagonal HG10 mode generation by off-axis pumping and the controllable Gouy phase difference between HG10 and HG01 modes in the sagittal and tangential planes. The chirality of the LG01 mode can be manipulated by the pump position to the original point of the laser cavity optical axis.

Coherent communication link using diode-pumped lasers

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Wallace, Richard W.

1989-01-01

Work toward developing a diffraction limited, single frequency, modulated transmitter suitable for coherent optical communication or direct detection communication is discussed. Diode pumped, monolithic Nd:YAG nonplanar ring oscillators were used as the carrier beam. An external modulation technique which can handle high optical powers, has moderate modulation voltage, and which can reach modulation rates of 1 GHz was invented. Semiconductor laser pumped solid-state lasers which have high output power (0.5 Watt) and which oscillate at a single frequency, in a diffraction limited beam, at the wavelength of 1.06 microns were built. A technique for phase modulating the laser output by 180 degrees with a 40-volt peak to peak driving voltage is demonstrated. This technique can be adapted for amplitude modulation of 100 percent with the same voltage. This technique makes use of a resonant bulk modulator, so it does not have the power handling limitations of guided wave modulators.

A power management system for energy harvesting and wireless sensor networks application based on a novel charge pump circuit

NASA Astrophysics Data System (ADS)

Aloulou, R.; De Peslouan, P.-O. Lucas; Mnif, H.; Alicalapa, F.; Luk, J. D. Lan Sun; Loulou, M.

2016-05-01

Energy Harvesting circuits are developed as an alternative solution to supply energy to autonomous sensor nodes in Wireless Sensor Networks. In this context, this paper presents a micro-power management system for multi energy sources based on a novel design of charge pump circuit to allow the total autonomy of self-powered sensors. This work proposes a low-voltage and high performance charge pump (CP) suitable for implementation in standard complementary metal oxide semiconductor (CMOS) technologies. The CP design was implemented using Cadence Virtuoso with AMS 0.35μm CMOS technology parameters. Its active area is 0.112 mm2. Consistent results were obtained between the measured findings of the chip testing and the simulation results. The circuit can operate with an 800 mV supply and generate a boosted output voltage of 2.835 V with 1 MHz as frequency.

A Laminar Flow-Based Microfluidic Tesla Pump via Lithography Enabled 3D Printing

PubMed Central

Habhab, Mohammed-Baker; Ismail, Tania; Lo, Joe Fujiou

2016-01-01

Tesla turbine and its applications in power generation and fluid flow were demonstrated by Nicholas Tesla in 1913. However, its real-world implementations were limited by the difficulty to maintain laminar flow between rotor disks, transient efficiencies during rotor acceleration, and the lack of other applications that fully utilize the continuous flow outputs. All of the aforementioned limits of Tesla turbines can be addressed by scaling to the microfluidic flow regime. Demonstrated here is a microscale Tesla pump designed and fabricated using a Digital Light Processing (DLP) based 3D printer with 43 µm lateral and 30 µm thickness resolutions. The miniaturized pump is characterized by low Reynolds number of 1000 and a flow rate of up to 12.6 mL/min at 1200 rpm, unloaded. It is capable of driving a mixer network to generate microfluidic gradient. The continuous, laminar flow from Tesla turbines is well-suited to the needs of flow-sensitive microfluidics, where the integrated pump will enable numerous compact lab-on-a-chip applications. PMID:27886051

Passively mode-locked pulse generation in a c-cut Nd:LuVO4 laser at 1086 nm with a semiconductor saturable-absorber mirror

NASA Astrophysics Data System (ADS)

Lin, Ja-Hon; Yang, Pao-Keng; Lin, Wei-Cheng

2012-04-01

We demonstrate a diode-pumped passively mode-locked (ML) c-cut Nd:LuVO4 laser with central wavelength at 1086 nm by shifting the reflectance band of the SESAM into a longer wavelength to result in larger loss around 1068 nm. At 15 W absorbed pump power, the highest output power of the ML pulse was about 2.6 W that corresponded to the 17.3% optical-to-optical conversion efficiency and the slope efficiency of laser was about 22.9%. Using our ML laser as the light source, we have also successfully measured the saturation fluence of the SESAM at 1086 nm.

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at an ultralow repetition rate.

PubMed

Papadopoulos, D N; Forget, S; Delaigue, M; Druon, F; Balembois, F; Georges, P

2003-10-01

We demonstrate the operation of an ultralow-repetition-rate, high-peak-power, picosecond diode-pumped Nd:YVO4 passively mode-locked laser oscillator. Repetition rates lower than 1 MHz were achieved with the use of a new design for a multiple-pass cavity and a semiconductor saturable absorber. Long-term stable operation at 1.2 MHz with a pulse duration of 16.3 ps and an average output power of 470 mW, corresponding to 24-kW peak-power pulses, is reported. These are to our knowledge the lowest-repetition-rate high-peak-power pulses ever generated directly from apicosecond laser resonator without cavity dumping.

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.

2016-10-15

Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at temperatures of 110–120 K are studied. It is found that cooling the lasers for both spectral ranges to low temperature results in their light–current curves approaching linearity, and an optical power of, respectively, 110 and 20 W can be attained. The low-temperature effect is reduced for lasers emitting in the spectral range 1400–1600 nm. The processes affecting a rise in the internal optical loss in semiconductor lasers are considered. It is shown that an increase in the carrier concentration in the waveguide ofmore » a laser structure greatly depends on temperature and is determined by the noninstantaneous capture (capture rate) of carriers from the waveguide into the active region. It is demonstrated that, upon lowering the temperature to 115K, the concentration of electrons and holes in the waveguide becomes lower, which leads to a significant decrease in the internal optical loss and to an increase in the output optical power of the semiconductor laser.« less

Insights Into the Solution Crystallization of Oriented Alq3 and Znq2 Microprisms and Nanorods.

PubMed

Boulet, Joel; Mohammadpour, Arash; Shankar, Karthik

2015-09-01

Optimized solution-based methods to grow high quality micro- and nanocrystals of organic semi-conductors with defined size, shape and orientation are important to a variety of optoelectronic applications. In this context, we report the growth of single crystal micro- and nanostructures of the organic semiconductors Tris(8-hydroxyquinoline)aluminum (Alq3) and bis(8-hydroxyquinoline)zinc (Znq2) terminating in flat crystal planes using a combination of evaporative and antisolvent crystallization. By controlling substrate-specific nucleation and optimizing the conditions of growth, we generate vertically-oriented hexagonal prism arrays of Alq3, and vertical half-disks and sharp-edged rectangular prisms of Znq2. The effect of process variables such as ambient vapour pressure, choice of anti-solvent and temperature on the morphology and crystal habit of the nanostructures were studied and the results of varying them catalogued to gain a better understanding of the mechanism of growth.

New type of heating system for clothes dryer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Itoh, K.; Itoh, C.

1995-12-01

The basic technology to improve serviceability and reliability of the electric clothes dryer relies on the heater and heat exchanger. This paper describes the status of stress analysis and the evaluation of reliability for semiconductors consisting of BaTiO{sub 3} for disk-type heat exchangers/heaters with honeycomb openings. If the authors could keep the Curie temperature of the semiconductor lower than the ignition temperature of clothing during the drying cycle, installation of two legally limited thermostats would no longer be required and reliability of the control system could be further improved due to its simplified structure. The heater can be made moremore » compact by designing a honeycomb-type heater/heat exchangers but the structural requirements for the heat exchanger and the heater would conflict. An approximate solution to heater/heat exchanger stress is being sought as a thermal stress issue for an equivalent solid compound disc.« less

Technology Development of Miniaturized Far-Infrared Sources for Biomolecular Spectroscopy

NASA Technical Reports Server (NTRS)

Kono, Junichiro

2003-01-01

The objective of this project was to develop a purely solid-state based, thus miniaturized, far-infrared (FIR) (also known as terahertz (THz)) wave source using III-V semiconductor nanostructures for biomolecular detection and sensing. Many biomolecules, such as DNA and proteins, have distinct spectroscopic features in the FIR wavelength range as a result of vibration-rotation-tunneling motions and various inter- and intra-molecule collective motions. Spectroscopic characterization of such molecules requires narrow linewidth, sufficiently high power, tunable (in wavelength), and coherent FIR sources. Unfortunately, the FIR frequency is one of the least technologically developed ranges in the electromagnetic spectrum. Currently available FIR sources based on non-solid state technology are bulky, inefficient, and very often incoherent. In this project we investigated antimonide based compound semiconductor (ABCS) nanostructures as the active medium to generate FIR radiation. The final goal of this project was to demonstrate a semiconductor THz source integrated with a pumping diode laser module to achieve a compact system for biomolecular applications.

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

NASA Astrophysics Data System (ADS)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

NASA Astrophysics Data System (ADS)

Ouyang, Chunmei; Wang, Honghai; Shum, Ping; Fu, Songnian; Wong, Jia Haur; Wu, Kan; Lim, Desmond Rodney Chin Siong; Wong, Vincent Kwok Huei; Lee, Kenneth Eng Kian

2011-01-01

We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.

Analysis of the dimensional dependence of semiconductor optical amplifier recovery speeds

NASA Astrophysics Data System (ADS)

Giller, Robin; Manning, Robert J.; Talli, Giuseppe; Webb, Roderick P.; Adams, Michael J.

2007-02-01

We investigate the dependence of the speed of recovery of optically excited semiconductor optical amplifiers (SOAs) on the active region dimensions. We use a picosecond pump-probe arrangement to experimentally measure and compare the gain and phase dynamics of four SOAs with varying active region dimensions. A sophisticated time domain SOA model incorporating amplified spontaneous emission (ASE) agrees well with the measurements and shows that, in the absence of a continuous wave (CW) beam, the ASE plays a similar role to such a holding beam. The experimental results are shown to be consistent with a recovery rate which is inversely proportional to the optical area. A significant speed increase is predicted for an appropriate choice of active region dimensions.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Four-wave mixing in an asymmetric double quantum dot molecule

NASA Astrophysics Data System (ADS)

Kosionis, Spyridon G.

2018-06-01

The four-wave mixing (FWM) effect of a weak probe field, in an asymmetric semiconductor double quantum dot (QD) structure driven by a strong pump field is theoretically studied. Similarly to the case of examining several other nonlinear optical processes, the nonlinear differential equations of the density matrix elements are used, under the rotating wave approximation. By suitably tuning the intensity and the frequency of the pump field as well as by changing the value of the applied bias voltage, a procedure used to properly adjust the electron tunneling coupling, we control the FWM in the same way as several other nonlinear optical processes of the system. While in the weak electron tunneling regime, the impact of the pump field intensity on the FWM is proven to be of crucial importance, for even higher rates of the electron tunneling it is evident that the intensity of the pump field has only a slight impact on the form of the FWM spectrum. The number of the spectral peaks, depends on the relation between specific parameters of the system.

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

DEVELOPMENT OF A LAMINATED DISK FOR THE SPIN TEK ROTARY MICROFILTER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herman, D.

2011-06-03

Funded by the Department of Energy Office of Environmental Management, EM-31, the Savannah River National Laboratory (SRNL) partnered with SpinTek Filtration{trademark} to develop a filter disk that would withstand a reverse pressure or flow during operation of the rotary microfilter. The ability to withstand a reverse pressure and flow eliminates a potential accident scenario that could have resulted in damage to the filter membranes. While the original welded filter disks have been shown to withstand and reverse pressure/flow in the static condition, the filter disk design discussed in this report will allow a reverse pressure/flow while the disks are rotating.more » In addition, the laminated disk increases the flexibility during filter startup and cleaning operations. The new filter disk developed by SRNL and SpinTek is manufactured with a more open structure significantly reducing internal flow restrictions in the disk. The prototype was tested at the University of Maryland and demonstrated to withstand the reverse pressure due to the centrifugal action of the rotary filter. The tested water flux of the disk was demonstrated to be 1.34 gpm in a single disk test. By comparison, the water flux of the current disk was 0.49 gpm per disk during a 25 disk test. The disk also demonstrated rejection of solids by filtering a 5 wt % Strontium Carbonate slurry with a filtrate clarity of less the 1.4 Nephelometric Turbidity Units (NTU) throughout the two hour test. The Savannah River National Laboratory (SRNL) has been working with SpinTek Filtration{trademark} to adapt the rotary microfilter for radioactive service in the Department of Energy (DOE) Complex. One potential weakness is the loose nature of the membrane on the filter disks. The current disk is constructed by welding the membrane at the outer edge of the disk. The seal for the center of the membrane is accomplished by an o-ring in compression for the assembled stack. The remainder of the membrane is free floating on the disk. This construction requires that a positive pressure be applied to the rotary filter tank to prevent the membrane from rising from the disk structure and potentially contacting the filter turbulence promoter. In addition, one accident scenario is a reverse flow through the filtrate line due to mis-alignment of valves resulting in the membrane rising from the disk structure. The structural integrity of the current disk has been investigated, and shown that the disk can withstand a significant reverse pressure in a static condition. However, the disk will likely incur damage if the filter stack is rotated during a reverse pressure. The development of a laminated disk would have several significant benefits for the operation of the rotary filter including the prevention of a compromise in filter disk integrity during a reverse flow accident, increasing operational flexibility, and increasing the self cleaning ability of the filter. A laminated disk would allow the filter rotor operation prior to a positive pressure in the filter tank. This would prevent the initial dead-head of the filter and prevent the resulting initial filter cake buildup. The laminated disk would allow rotor operation with cleaning fluid, eliminating the need for a recirculation pump. Additionally, a laminated disk would allow a reverse flow of fluid through the membrane pores removing trapped particles.« less

Evaluation of Double-Disk Potentiation and Disk Potentiation Tests Using Dipicolinic Acid for Detection of Metallo-β-Lactamase-Producing Pseudomonas spp. and Acinetobacter spp.

PubMed Central

Yong, Dongeun; Lee, Yangsoon; Jeong, Seok Hoon; Lee, Kyungwon

2012-01-01

Accurate detection of metallo-β-lactamase (MBL)-producing Pseudomonas spp. and Acinetobacter spp. became very important with the increasing prevalence of carbapenem-nonsusceptible clinical isolates. The performance of phenotypic MBL detection methods may depend on the types of MBL and the characteristics of the isolates. A high false-positive rate is a problem with EDTA-based MBL detection methods. We evaluated the performance of double-disk potentiation tests (DDPTs) and disk potentiation tests (DPTs) with dipicolinic acid (DPA) using 44 isolates of Pseudomonas spp. and Acinetobacter spp. producing IMP-1-like, VIM-2-like, and SIM-1 type MBLs. Also, we characterized P. aeruginosa isolates with positive imipenem (IPM)-DPA DDPT, but negative meropenem (MEM)-DPA DDPT, and determined possibility of improving a DDPT by using MacConkey agar. Among five different DDPT methods, the IPM-DPA 250-μg method showed the highest sensitivity (97.7%) and specificity (100%). Among four DPT tests, the highest sensitivity (100%) was shown by the IPM-EDTA 1,900-μg disk method, but the specificity was very low (11.4%). Five of six P. aeruginosa isolates with false-negative DDPTs with MEM-DPA 250-μg disks carried blaIMP-6, and the high level resistance to MEM (MIC ≥ 512 μg/ml) was reduced by the presence of phenylalanine arginine β-naphtylamide. Improvement of DDPTs was observed when MacConkey agar was used instead of Mueller-Hinton agar. In conclusion, DPA is a better MBL inhibitor than EDTA for detection of Pseudomonas spp. and Acinetobacter spp. with IMP-1-like, VIM-2-like, and SIM-1-type MBLs. In DPA DDPTs, IPM disks perform better than MEM disks when the isolates are highly resistant to MEM due to the overexpression of efflux pumps. PMID:22837321

Sources of Shock Waves in the Protoplanetary Disk

NASA Astrophysics Data System (ADS)

Boss, A. P.; Durisen, R. H.

2005-12-01

Finding an appropriate heat source for melting the chondrules that constitute the bulk of many primitive meteorites is perhaps the most important outstanding problem in all of meteoritics. Shock waves within the Solar Nebula are one possible means for accomplishing this provided that they move with respect to the precursor aggregates at speeds of ~ 6 to 9 km s-1 in environments with appropriate nebular pressures and densities. Here we briefly review the status of four different mechanisms which have been proposed as sources of such shock fronts. We argue that two of them, the accretion shock at the nebular surface and shocks propagating inside the nebula launched by the impact of gas clumps falling onto the disk, are unlikely to work. Bow shocks driven by 1000-km-size planetesimals show more promise, but require the presence of Jupiter to raise the eccentricities of the planetesimals. We then focus this chapter on the fourth mechanism, which may be the dominant source of shocks in the early nebula. Wood (1996) proposed that the chondrule-producing shocks were due to nebular spiral arms. This hypothesis is now strongly supported by recent calculations of the evolution of gravitationally unstable disks. In a gaseous disk capable of forming Jupiter, the disk gas must have been close to marginal gravitational instability near or beyond Jupiter's orbit. Massive clumps and spirals due to such instability can drive spiral shock fronts inward with shock speeds as large as ~ 10 km s-1 at asteroidal orbits, sufficient to account for chondrule formation. Once Jupiter forms, it may either continue to drive strong shock fronts at asteroidal distances, or it may pump up the eccentricity of planetesimals, leading to chondrule processing for as long as the inner disk gas survives, a few Myr or so. Mixing and transport of solids in an unstable disk results in a scenario that unifies chondrite formation from chondrules, refractory inclusions, and matrix grains with disk processes associated with gas giant planet formation.

A Panchromatic Study of Molecular Gas in the Protoplanetary System RY Lupi

NASA Astrophysics Data System (ADS)

Arulanantham, Nicole; France, Kevin; Hoadley, Keri

2018-01-01

To understand how planet formation occurs in protoplanetary disks, we must first characterize the behavior of material within 10 AU of the central star. We present a study of molecular gas at these radii in the disk around the young star RY Lupi, through spectra from HST-COS, HST-STIS, and VLT-CRIRES. We model the radial distribution of flux from hot (T ~ 2000 K) molecular gas in a surface layer between r = 0.1-10 AU, as traced by LyA-pumped H2. The result indicates that the H2 emission originates in a narrow ring centered at 1 AU, with a sharp decline in flux at r < 0.1 AU that is consistent with what is expected for transitional disks. When we adopt a more basic approach to evaulate the shapes of the emission lines, we find that a two-component Gaussian profile assuming two rings of gas in the inner disk provides a statistically better fit to the H2 emission lines than the single-component model of a smooth disk. This two-component profile includes broad (FWHMbroad, H2 = 105 +/- 15 km/s) and narrow (FWHMnarrow, H2 = 43 +/- 13 km/s) lines, corresponding to average gas radii of ~ 0.4 AU and ~ 3 AU. An analysis of the spatial origin of 4.7 micron 12CO emission shows that this population of warm (T ~ 1500 K) gas also produces two-component emission line profiles ( ~ 0.4 AU, ~ 15 AU), indicating again that the inner disk is radially stratified. Despite the evidence that this is a transitional disk system, we detect UV CO absorption that is not typically seen in more evolved systems. We model these features along with IR CO absorptions to constrain the properties of the cooler (T ~ 100-300 K) disk atmosphere.

The preparation of polytrifluorochloroethylene (PCTFE) micro-particles and application on treating bearing steel surfaces to improve the lubrication effect for copper-graphite (Cu/C)

NASA Astrophysics Data System (ADS)

Lu, Hailin; Zhang, Pengpeng; Ren, Shanshan; Guo, Junde; Li, Xing; Dong, Guangneng

2018-01-01

Contact mechanical seal is a normal technology applied on middle axis of liquid rocket turbo pump, and the kinetic and static seal rings contact low temperature rocket propellant. Copper-graphite (Cu/C) composite as an excellent self-lubrication material was widely used in aerospace industry, this study took Cu/C as ball and bearing steel as disk to investigate the tribology properties, and distilled water were used to simulate the lox tribology performances. This study prepared polytrifluorochloroethylene (PCTFE) micro-particles which were coated on the oxide surfaces of bearing steel disk at temperature of 150 °C. The tribology results showed that the oxide surfaces treated with micro PCTFE particles have lower fiction coefficient and lower wear rate than original disk in water, and the wear morphology revealed that the treated surfaces obviously had less Cu/C composite transfer film than original disk. Meanwhile SEM, EDS, XRD, XPS and light microscope etc revealed that PCTFE micro-particles could associate with the oxide surfaces and caused higher water contact angle, due to the properties of the fluorine-containing composite may cause the good lubrication effect in water. Thus this technology shows great potential to enhance tribological performances for aerospace industry on a large scale.

Use of a novel tunable solid state disk laser as a diagnostic system for laser-induced fluorescence

NASA Astrophysics Data System (ADS)

Paa, Wolfgang; Triebel, Wolfgang

2004-09-01

An all solid state disk laser system-named "Advanced Disk Laser (ADL)" -particularly tailored for laser induced fluorescence (LIF) in combustion processes is presented. The system currently under development comprises an Yb:YAG-seedlaser and a regenerative amplifier. Both are based on the disk laser concept as a new laser architecture. This allows a tunable, compact, efficient diode pumped solid state laser (DPSSL) system with repetition rates in the kHz region. After frequency conversion to the UV-spectral region via third and fourth harmonics generation, this laser-due to its unique properties such as single-frequency operation, wavelength tuneability and excellent beam profile-is well suited for excitation of small molecules such as formaldehyde, OH, NO or O2, which are characteristic for combustion processes. Using the method of planar laser induced fluorescence (PLIF) we observed concentration distributions of formaldehyde in cool and hot flames of a specially designed diethyl-ether burner. The images recorded with 1 kHz repetition rate allow visualizing the distribution of formaldehyde on a 1 ms time scale. This demonstrates for the first time the usability of this novel laser for LIF measurements and is the first step towards integration of the ADL into capsules for drop towers and the international space station.

Shaft/shaft-seal interface characteristics of a multiple disk centrifugal blood pump.

PubMed

Manning, K B; Miller, G E

1999-06-01

A multiple disk centrifugal pump (MDCP) is under investigation as a potential left ventricular assist device. As is the case with most shaft driven pumps, leakage problems around the shaft/shaft seal interface are of major interest. If leakage were to occur during or after implantation, potential events such as blood loss, clotting, blood damage, and/or infections might result in adverse effects for the patient. Because these effects could be quite disastrous, potential shaft and shaft seal materials have been investigated to determine the most appropriate course to limit these effects. Teflon and nylon shaft seals were analyzed as potential candidates along with a stainless steel shaft and a Melonite coated shaft. The materials and shafts were evaluated under various time durations (15, 30, 45, and 60 min), motor speeds (800, 1,000, 1,200, and 1,400 rpm), and outer diameters (1/2 and 3/4 inches). The motor speed and geometrical configurations were typical for the MDCP under normal physiologic conditions. An air and water study was conducted to analyze the inner diameter wear, the inner temperature values, and the outer temperature values. Statistical comparisons were computed for the shaft seal materials, the shafts, and the outer diameters along with the inner and outer temperatures. The conclusions made from the results indicate that both the tested shaft seal materials and shaft materials are not ideal candidates to be used for the MDCP. Teflon experienced a significant amount of wear in air and water studies. Nylon did experience little wear, but heat generation was an evident problem. A water study on nylon was not conducted because of its molecular structure.

Gas Heating, Chemistry and Photoevaporation in Protostellar Disks

NASA Technical Reports Server (NTRS)

Hollenbach, David

2004-01-01

We model the thermal balance, the chemistry, and the radiative transfer in dusty disks orbiting young, low mass stars. These models are motivated by observations of infrared and ultraviolet transitions of H2 from protoplanetary disks, as well as millimeter and submillimeter observations of other molecules such as CO, and infrared continuum observations of the dust. The dust grains are heated primarily by the stellar radiation and the infrared radiation field produced by the dust itself. The gas is heated by collisions with warmer dust grains, X-rays from the region close to the stellar surface, UV pumping of hydrogen molecules, and the grain photoelectric heating mechanism initiated by UV photons from the central star. We treat cases where the gas to dust ratio is high, because the dust has settled to the midplane and coagulated into relatively large objects. We discuss situations in which the infrared emission from H2 can be detected, and how the comparison of the observations with our models can deduce physical parameters such as the mass and the density and temperature distribution of the gas.

kW picosecond thin-disk regenerative amplifier

NASA Astrophysics Data System (ADS)

Michel, Knut; Wandt, Christoph; Klingebiel, Sandro; Schultze, Marcel; Prinz, Stephan; Teisset, Catherine Y.; Stark, Sebastian; Grebing, Christian; Bessing, Robert; Herzig, Tobias; Häfner, Matthias; Budnicki, Aleksander; Sutter, Dirk; Metzger, Thomas

2018-02-01

TRUMPF Scientific Lasers provides ultrafast laser sources for the scientific community with high pulse energies and high average power. All systems are based on the industrialized TRUMPF thin-disk technology. Regenerative amplifiers systems with multi-millijoule pulses, kilohertz repetition rates and picosecond pulse durations are available. Record values of 220mJ at 1kHz could be demonstrated originally developed for pumping optical parametric amplifiers. The ultimate goal is to combine high energies, <100mJ per pulse, with average powers of several hundred watts to a kilowatt. Based on a regenerative amplifier containing two Ytterbium doped thin-disks operated at ambient temperature pulses with picosecond duration and more than 100mJ could be generated at a repetition rate of 10kHz reaching 1kW of average output power. This system is designed to operate at different repetition rates from 100kHz down to 5kHz so that even higher pulse energies can be reached. This type of ultrafast sources uncover new application fields in science. Laser based lightning rods, X-ray lasers and Compton backscatter sources are among them.

Low threshold and high efficiency solar-pumped laser with Fresnel lens and a grooved Nd:YAG rod

NASA Astrophysics Data System (ADS)

Guan, Zhe; Zhao, Changming; Yang, Suhui; Wang, Yu; Ke, Jieyao; Gao, Fengbin; Zhang, Haiyang

2016-11-01

Sunlight is considered as a new efficient source for direct optical-pumped solid state lasers. High-efficiency solar pumped lasers with low threshold power would be more promising than semiconductor lasers with large solar panel in space laser communication. Here we report a significant advance in solar-pumped laser threshold by pumping Nd:YAG rod with a grooved sidewall. Two-solar pumped laser setups are devised. In both cases, a Fresnel lens is used as the primary sunlight concentrator. Gold-plated conical cavity with a liquid light-guide lens is used as the secondary concentrator to further increase the solar energy concentration. In the first setup, solar pumping a 6mm diameter Nd:YAG rod, maximum laser power of 31.0W/m2 cw at 1064nm is produced, which is higher than the reported record, and the slope efficiency is 4.98% with the threshold power on the surface of Fresnel lens is 200 W. In the second setup, a 5 mm diameter laser rod output power is 29.8W/m2 with a slope efficiency of 4.3%. The threshold power of 102W is obtained, which is 49% lower than the former. Meanwhile, the theoretical calculating of the threshold power and slope efficiency of the solar-pumped laser has been established based on the rate-equation of a four-level system. The results of the finite element analysis by simulation software are verified in experiment. The optimization of the conical cavity by TraceProsoftware and the optimization of the laser resonator by LASCADare useful for the design of a miniaturization solar- pumped laser.

Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

NASA Astrophysics Data System (ADS)

Richter, A.; Pavel, N.; Heumann, E.; Huber, G.; Parisi, D.; Toncelli, A.; Tonelli, M.; Diening, A.; Seelert, W.

2006-04-01

We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF4 and Pr:BaY2F8 was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB3O5 as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF4 and Pr:BaY2F8, respectively.

Final Technical Report for EE0006091: H2Pump Hydrogen Recycling System Demonstration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Staudt, Rhonda

The objective of this project is to demonstrate the product readiness and to quantify the benefits and customer value proposition of H2Pump’s Hydrogen Recycling System (HRS-100™) by installing and analyzing the operation of multiple prototype 100-kg per day systems in real world customer locations. The data gathered will be used to measure reliability, demonstrate the value proposition to customers, and validate our business model. H2Pump will install, track and report multiple field demonstration systems in industrial heat treating and semi-conductor applications. The customer demonstrations will be used to develop case studies and showcase the benefits of the technology to drivemore » market adoption.« less

Auto-locking waveguide amplifier system for lidar and magnetometric applications

NASA Astrophysics Data System (ADS)

Pouliot, A.; Beica, H. C.; Carew, A.; Vorozcovs, A.; Carlse, G.; Kumarakrishnan, A.

2018-02-01

We describe a compact waveguide amplifier system that is suitable for optically pumping rubidium magnetometers. The system consists of an auto-locking vacuum-sealed external cavity diode laser, a semiconductor tapered amplifier and a pulsing unit based on an acousto-optic modulator. The diode laser utilises optical feedback from an interference filter to narrow the linewidth of an inexpensive laser diode to 500 kHz. This output is scannable over an 8 GHz range (at 780 nm) and can be locked without human intervention to any spectral marker in an expandable library of reference spectra, using the autolocking controller. The tapered amplifier amplifies the output from 50 mW up to 2 W with negligible distortions in the spectral quality. The system can operate at visible and near infrared wavelengths with MHz repetition rates. We demonstrate optical pumping of rubidium vapour with this system for magnetometric applications. The magnetometer detects the differential absorption of two orthogonally polarized components of a linearly polarized probe laser following optical pumping by a circularly polarized pump laser. The differential absorption signal is studied for a range of pulse lengths, pulse amplitudes and DC magnetic fields. Our results suggest that this laser system is suitable for optically pumping spin-exchange free magnetometers.

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

NASA Astrophysics Data System (ADS)

Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E. U.

2012-08-01

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency ˜1 THz.

Development and planning and design of equipment pumping generator of semiconductor lasers

NASA Technical Reports Server (NTRS)

Popkov, A. V.

1974-01-01

The schematic of a multidimensional current pulse generator is studied. A MTKh-90 cold cathode thyratron is used as the current commutator. In the autooscillation mode on a frequency of 380 hertz the generator creates a current to 100 amps per pulse in a control resistance of 1 ohm. The pulse duration is regulated within the limits from 0.1 to 3.0 microseconds.

High Efficiency End-Pumped Ho:Tm:YLF Disk Amplifier

NASA Technical Reports Server (NTRS)

Yu, Jirong; Singh, Upendra N.; Petros, Mulugeta; Axenson, Theresa J.; Barnes, Norman P.

1999-01-01

Space based coherent lidar for global wind measurement requires an all solid state laser system with high energy, high efficiency and narrow linewidth that operates in the eye safe region. A Q-switched, diode pumped Ho:Tm:YLF 2 micrometer laser with output energy of as much as 125 mJ at 6 Hz with an optical-to-optical efficiency of 3% has been reported. Single frequency operation of the laser was achieved by injection seeding. The design of this laser is being incorporated into NASA's SPARCLE (SPAce Readiness Coherent Lidar Experiment) wind lidar mission. Laser output energy ranging from 500 mJ to 2 J is required for an operational space coherent lidar. We previously developed a high energy Ho:Tm:YLF master oscillator and side pumped power amplifier system and demonstrated a 600-mJ single frequency pulse at a repetition rate of 10 Hz. Although the output energy is high, the optical-to-optical efficiency is only about 2%. Designing a high energy, highly efficient, conductively cooled 2-micrometer laser remains a challenge. In this paper, the preliminary result of an end-pumped amplifier that has a potential to provide a factor 3 of improvement in the system efficiency is reported.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Bhartia, Rohit (Inventor); Reid, Ray D. (Inventor)

2017-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor)

2018-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Narrow line width dual wavelength semiconductor optical amplifier based random fiber laser

NASA Astrophysics Data System (ADS)

Shawki, Heba A.; Kotb, Hussein E.; Khalil, Diaa

2018-02-01

A novel narrow line-width Single longitudinal mode (SLM) dual wavelength random fiber laser of 20 nm separation between wavelengths of 1530 and 1550 nm is presented. The laser is based on Rayleigh backscattering in a standard single mode fiber of 2 Km length as distributed mirrors, and a semiconductor optical amplifier (SOA) as the optical amplification medium. Two optical bandpass filters are used for the two wavelengths selectivity, and two Faraday Rotator mirrors are used to stabilize the two lasing wavelengths against fiber random birefringence. The optical signal to noise ratio (OSNR) was measured to be 38 dB. The line-width of the laser was measured to be 13.3 and 14 KHz at 1530 and 1550 nm respectively, at SOA pump current of 370 mA.

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Visualising Berry phase and diabolical points in a quantum exciton-polariton billiard

PubMed Central

Estrecho, E.; Gao, T.; Brodbeck, S.; Kamp, M.; Schneider, C.; Höfling, S.; Truscott, A. G.; Ostrovskaya, E. A.

2016-01-01

Diabolical points (spectral degeneracies) can naturally occur in spectra of two-dimensional quantum systems and classical wave resonators due to simple symmetries. Geometric Berry phase is associated with these spectral degeneracies. Here, we demonstrate a diabolical point and the corresponding Berry phase in the spectrum of hybrid light-matter quasiparticles—exciton-polaritons in semiconductor microcavities. It is well known that sufficiently strong optical pumping can drive exciton-polaritons to quantum degeneracy, whereby they form a macroscopically populated quantum coherent state similar to a Bose-Einstein condensate. By pumping a microcavity with a spatially structured light beam, we create a two-dimensional quantum billiard for the exciton-polariton condensate and demonstrate a diabolical point in the spectrum of the billiard eigenstates. The fully reconfigurable geometry of the potential walls controlled by the optical pump enables a striking experimental visualization of the Berry phase associated with the diabolical point. The Berry phase is observed and measured by direct imaging of the macroscopic exciton-polariton probability densities. PMID:27886222

Low-cost, single-mode diode-pumped Cr:Colquiriite lasers.

PubMed

Demirbas, Umit; Li, Duo; Birge, Jonathan R; Sennaroglu, Alphan; Petrich, Gale S; Kolodziejski, Leslie A; Kaertner, Franz X; Fujimoto, James G

2009-08-03

We present three Cr3+:Colquiriite lasers as low-cost alternatives to Ti:Sapphire laser technology. Single-mode laser diodes, which cost only $150 each, were used as pump sources. In cw operation, with approximately 520 mW of absorbed pump power, up to 257, 269 and 266 mW of output power and slope efficiencies of 53%, 62% and 54% were demonstrated for Cr:LiSAF, Cr:LiSGaF and Cr:LiCAF, respectively. Record cw tuning ranges from 782 to 1042 nm for Cr:LiSAF, 777 to 977 nm for Cr:LiSGaF, and 754 to 871 nm for Cr:LiCAF were demonstrated. In cw mode-locking experiments using semiconductor saturable absorber mirrors at 800 and 850 nm, Cr:Colquiriite lasers produced approximately 50-100 fs pulses with approximately 1-2.5 nJ pulse energies at approximately 100 MHz repetition rate. Electrical-to-optical conversion efficiencies of 8% in mode-locked operation and 12% in cw operation were achieved.

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

NASA Astrophysics Data System (ADS)

Parali, Ufuk; Sheng, Xin; Minassian, Ara; Tawy, Goronwy; Sathian, Juna; Thomas, Gabrielle M.; Damzen, Michael J.

2018-03-01

We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6 . 5 μJ at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1 . 1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm.

The optical pumping of alkali atoms using coherent radiation from semi-conductor injection lasers and incoherent radiation from resonance lamps

NASA Technical Reports Server (NTRS)

Singh, G.

1973-01-01

An experimental study for creating population differences in the ground states of alkali atoms (Cesium 133) is presented. Studies made on GaAs-junction lasers and the achievement of population inversions among the hyperfine levels in the ground state of Cs 133 by optically pumping it with radiation from a GaAs diode laser. Laser output was used to monitor the populations in the ground state hyperfine levels as well as to perform the hyperfine pumping. A GaAs laser operated at about 77 K was used to scan the 8521 A line of Cs 133. Experiments were performed both with neon-filled and with paraflint-coated cells containing the cesium vapor. Investigations were also made for the development of the triple resonance coherent pulse technique and for the detection of microwave induced hyperfine trasistions by destroying the phase relationships produced by a radio frequency pulse. A pulsed cesium resonance lamp developed, and the lamp showed clean and reproducible switching characteristics.

Femtosecond to picosecond transient effects in WSe 2 observed by pump-probe angle-resolved photoemission spectroscopy.

PubMed

Liu, Ro-Ya; Ogawa, Yu; Chen, Peng; Ozawa, Kenichi; Suzuki, Takeshi; Okada, Masaru; Someya, Takashi; Ishida, Yukiaki; Okazaki, Kozo; Shin, Shik; Chiang, Tai-Chang; Matsuda, Iwao

2017-11-22

Time-dependent responses of materials to an ultrashort optical pulse carry valuable information about the electronic and lattice dynamics; this research area has been widely studied on novel two-dimensional materials such as graphene, transition metal dichalcogenides (TMDs) and topological insulators (TIs). We report herein a time-resolved and angle-resolved photoemission spectroscopy (TRARPES) study of WSe 2 , a layered semiconductor of interest for valley electronics. The results for below-gap optical pumping reveal energy-gain and -loss Floquet replica valence bands that appear instantaneously in concert with the pump pulse. Energy shift, broadening, and complex intensity variation and oscillation at twice the phonon frequency for the valence bands are observed at time scales ranging from the femtosecond to the picosecond and beyond. The underlying physics is rich, including ponderomotive interaction, dressing of the electronic states, creation of coherent phonon pairs, and diffusion of charge carriers - effects operating at vastly different time domains.

Pattern Formation in Diffusion Flames Embedded in von Karman Swirling Flows

NASA Technical Reports Server (NTRS)

Nayagam, Vedha

2006-01-01

Pattern formation is observed in nature in many so-called excitable systems that can support wave propagation. It is well-known in the field of combustion that premixed flames can exhibit patterns through differential diffusion mechanism between heat and mass. However, in the case of diffusion flames where fuel and oxidizer are separated initially there have been only a few observations of pattern formation. It is generally perceived that since diffusion flames do not possess an inherent propagation speed they are static and do not form patterns. But in diffusion flames close to their extinction local quenching can occur and produce flame edges which can propagate along stoichiometric surfaces. Recently, we reported experimental observations of rotating spiral flame edges during near-limit combustion of a downward-facing polymethylmethacrylate disk spinning in quiescent air. These spiral flames, though short-lived, exhibited many similarities to patterns commonly found in quiescent excitable media including compound tip meandering motion. Flame disks that grow or shrink with time depending on the rotational speed and in-depth heat loss history of the fuel disk have also been reported. One of the limitations of studying flame patterns with solid fuels is that steady-state conditions cannot be achieved in air at normal atmospheric pressure for experimentally reasonable fuel thickness. As a means to reproduce the flame patterns observed earlier with solid fuels, but under steady-state conditions, we have designed and built a rotating, porous-disk burner through which gaseous fuels can be injected and burned as diffusion flames. The rotating porous disk generates a flow of air toward the disk by a viscous pumping action, generating what is called the von K rm n boundary layer which is of constant thickness over the entire burner disk. In this note we present a map of the various dynamic flame patterns observed during the combustion of methane in air as a function of fuel flow rate and the burner rotational speed.

Millijoule-level 20 ps Nd:YAG oscillator-amplifier laser system for investigation of stimulated Raman scattering and optical parametric generation

NASA Astrophysics Data System (ADS)

Jelínek, Michal; Kubecek, Vàclav

2012-06-01

We report on quasi-continuously pumped oscillator-amplifier laser system. The laser oscillator was based on highly 2.4 at.% doped crystalline Nd:YAG in a bounce geometry and passively mode locked by a semiconductor saturable absorber mirror. Using the cavity dumping technique, 19 ps pulses with the energy of 20 μJ and Gaussian spatial beam profile were generated directly from the oscillator at the repetition rate up to 50 Hz. For applications requiring more energetic pulses the amplification was studied using either an identical highly doped Nd:YAG module in bounce geometry or flashlamp pumped Nd:YAG laser rod. Using compact all diode pumped oscillator-amplifier system, 130 μJ pulses were generated. The flashlamp pumped amplifier with 100 mm long Nd:YAG enabled to obtain higher energy. In the single pass configuration the pulse was amplified to 4.5 mJ, using the double pass configuration the pulse energy was further increased up to 20 mJ with the duration of 25 ps at 10 Hz. The developed laser system was used for investigation of stimulated Raman scattering in Strontium Barium Niobate and optical parametric generation in CdSiP2.

Low level laser therapy for patients with cervical disk hernia.

PubMed

Takahashi, Hiroshi; Okuni, Ikuko; Ushigome, Nobuyuki; Harada, Takashi; Tsuruoka, Hiroshi; Ohshiro, Toshio; Sekiguchi, Masayuki; Musya, Yoshiro

2012-09-30

In previous studies we have reported the benefits of low level laser therapy (LLLT) for chronic shoulder joint pain, elbow, hand and finger pain, and low back pain. The present study is a report on the effects of LLLT for chronic neck pain. Over a 3 year period, 26 rehabilitation department outpatients with chronic neck pain, diagnosed as being caused by cervical disk hernia, underwent treatment applied to the painful area with a 1000 mW semi-conductor laser device delivering at 830 nm in continuous wave, 20.1 J/cm(2)/point, and three shots were given per session (1 treatment) with twice a week for 4 weeks. 1. A visual analogue scale (VAS) was used to determine the effects of LLLT for chronic pain and after the end of the treatment regimen a significant improvement was observed (p<0.001). 2. After treatment, no significant differences in cervical spine range of motion were observed. 3. Discussions with the patients revealed that in order to receive continued benefits from treatment, it was important for them to be taught how to avoid postures that would cause them neck pain in everyday life. The present study demonstrates that LLLT was an effective form of treatment for neck and back pain caused by cervical disk hernia, reinforced by postural training.

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

DOE PAGES

Cherukara, Mathew J.; Sasikumar, Kiran; DiChiara, Anthony; ...

2017-11-07

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. Here in this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplaymore » of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.« less

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherukara, Mathew J.; Sasikumar, Kiran; DiChiara, Anthony

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. Here in this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplaymore » of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.« less

Dynamical Fano-Like Interference between Rabi Oscillations and Coherent Phonons in a Semiconductor Microcavity System.

PubMed

Yoshino, S; Oohata, G; Mizoguchi, K

2015-10-09

We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures.

PubMed

Cherukara, Mathew J; Sasikumar, Kiran; DiChiara, Anthony; Leake, Steven J; Cha, Wonsuk; Dufresne, Eric M; Peterka, Tom; McNulty, Ian; Walko, Donald A; Wen, Haidan; Sankaranarayanan, Subramanian K R S; Harder, Ross J

2017-12-13

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. In this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplay of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.

Directional interlayer spin-valley transfer in two-dimensional heterostructures

DOE PAGES

Schaibley, John R.; Rivera, Pasqual; Yu, Hongyi; ...

2016-12-14

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. In this paper, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe 2–WSe 2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weaklymore » dependent on the twist angle between layers. Finally, our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.« less

Ultrafast Study of Dynamic Exchange Coupling in Ferromagnet/Oxide/Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Ou, Yu-Sheng

Spintronics is the area of research that aims at utilizing the quantum mechanical spin degree of freedom of electrons in solid-state materials for information processing and data storage application. Since the discovery of the giant magnetoresistance, the field of spintronics has attracted lots of attention for its numerous potential advantages over contemporary electronics, such as less power consumption, high integration density and non-volatility. The realization of a spin battery, defined by the ability to create spin current without associated charge current, has been a long-standing goal in the field of spintronics. The demonstration of pure spin current in ferromagnet/nonmagnetic material hybrid structures by ferromagnetic resonance spin pumping has defined a thrilling direction for this field. As such, this dissertation targets at exploring the spin and magnetization dynamics in ferromagnet/oxide/semiconductor heterostructures (Fe/MgO/GaAs) using time-resolved optical pump-probe spectroscopy with the long-range goal of understanding the fundamentals of FMR-driven spin pumping. Fe/GaAs heterostructures are complex systems that contain multiple spin species, including paramagnetic spins (GaAs electrons), nuclear spins (Ga and As nuclei) and ferromagnetic spins (Fe). Optical pump-probe studies on their interplay have revealed a number of novel phenomena that has not been explored before. As such they will be the major focus of this dissertation. First, I will discuss the effect of interfacial exchange coupling on the GaAs free-carrier spin relaxation. Temperature- and field-dependent spin-resolved pump-probe studies reveal a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. Second, we investigate the impact of tunnel barrier thickness on GaAs electron spin dynamics in Fe/MgO/GaAs heterostructures. Comparison of the Larmor frequency between samples with thick and thin MgO barriers reveals a four-fold variation in exchange coupling strength, and investigation of the spin lifetimes argues that inhomogeneity in the local hyperfine field dominates free-carrier spin relaxation across the entire range of barrier thickness. These results provide additional evidence to support the theory of hyperfine-dominated spin relaxation in GaAs. Third, we investigated the origin and dynamics of an emergent spin population by pump power and magnetic field dependent spin-resolved pump-probe studies. Power dependent study confirms its origin to be filling of electronic states in GaAs, and further field dependent studies reveal the impact of contact hyperfine coupling on the dynamics of electron spins occupying distinct electronic states. Beyond above works, we also pursue optical detection of dynamic spin pumping in Fe/MgO/GaAs heterostructures in parallel. I will discuss the development and progress that we have made toward this goal. This project can be simply divided into two phases. In the first phase, we focused on microwave excitation and optical detection of spin pumping. In the second phase, we focused on all-optical excitation and detection of spin pumping. A number of measurement strategies have been developed and executed in both stages to hunt for a spin pumping signal. I will discuss the preliminary data based upon them.

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

One-dimensional surface-plasmon gratings for the excitation of intersubband polaritons in suspended membranes

NASA Astrophysics Data System (ADS)

Degl'Innocenti, R.; Zanotto, S.; Tredicucci, A.; Biasiol, G.; Sorba, L.

2011-12-01

We present the observation of the strong light-matter coupling regime between intersubband transitions of semiconductor quantum wells and the plasmonic-like resonances of a one dimensional metallic grating. Polariton spectra have been recorded in transmission employing a suspended membrane sample and are consistent with theoretical calculations. This arrangement, avoiding the complexity of dispersive substrate, is particularly attractive for the development of time-resolved pump-probe experiments.

Realization of pure frequency modulation of DFB laser via combined optical and electrical tuning.

PubMed

Tian, Chao; Chen, I-Chun Anderson; Park, Seong-Wook; Martini, Rainer

2013-04-08

In this paper we present a novel approach to convert AM signal into FM signal in semiconductor lasers via off resonance optical pumping and report on experimental results obtained with a commercial DFB laser. Aside of demonstrating discrete and fast frequency modulation, we achieve pure frequency modulation through combination with electrical modulation suppressing the associated amplitude modulation, which is detrimental to application such as spectroscopy and communication.

Electrically Tunable Mid-Infrared Single-Mode High-Speed Semiconductor Laser

DTIC Science & Technology

2010-11-01

effective and the net tunnel rate may decrease in spite of progressing carrier density buildup in the accumulation well. Enforcing the bias current at...In te ns ity , a .u . E, eV Regular ICL Figure 4 The dependence of the electroluminescence (EL) quantum energy on the bias voltage for a...spectral maximum energy increases linearly with the bias voltage. Since the dependence is measured in the sub-threshold pumping region, the linear

Ten-watt level picosecond parametric mid-IR source broadly tunable in wavelength

NASA Astrophysics Data System (ADS)

Vyvlečka, Michal; Novák, Ondřej; Roškot, Lukáscaron; Smrž, Martin; Mužík, Jiří; Endo, Akira; Mocek, Tomáš

2018-02-01

Mid-IR wavelength range (between 2 and 8 μm) offers perspective applications, such as minimally-invasive neurosurgery, gas sensing, or plastic and polymer processing. Maturity of high average power near-IR lasers is beneficial for powerful mid-IR generation by optical parametric conversion. We utilize in-house developed Yb:YAG thin-disk laser of 100 W average power at 77 kHz repetition rate, wavelength of 1030 nm, and about 2 ps pulse width for pumping of a ten-watt level picosecond mid-IR source. Seed beam is obtained by optical parametric generation in a double-pass 10 mm long PPLN crystal pumped by a part of the fundamental near-IR beam. Tunability of the signal wavelength between 1.46 μm and 1.95 μm was achieved with power of several tens of miliwatts. Main part of the fundamental beam pumps an optical parametric amplification stage, which includes a walk-off compensating pair of 10 mm long KTP crystals. We already demonstrated the OPA output signal and idler beam tunability between 1.70-1.95 μm and 2.18-2.62 μm, respectively. The signal and idler beams were amplified up to 8.5 W and 5 W, respectively, at 42 W pump without evidence of strong saturation. Thus, increase in signal and idler output power is expected for pump power increase.

Grating enhanced solid-state laser amplifiers

DOEpatents

Erlandson, Alvin C.; Britten, Jerald A.

2010-11-09

A novel method and apparatus for suppressing ASE and parasitic oscillation modes in a high average power laser is introduced. Such an invention, as disclosed herein, uses diffraction gratings to increase gain, stored energy density, and pumping efficiency of solid-state laser gain media, such as, but not limited to rods, disks and slabs. By coupling predetermined gratings to solid-state gain media, such as crystal or ceramic laser gain media, ASE and parasitic oscillation modes can be effectively suppressed.

Magnetic Field Transport in Accretion Disks

NASA Astrophysics Data System (ADS)

Jafari, Amir; Vishniac, Ethan T.

2018-02-01

The leading models for launching astrophysical jets rely on strong poloidal magnetic fields threading the central parts of their host accretion disks. Numerical simulations of magneto-rotationally turbulent disks suggest that such fields are actually advected from the environment by the accreting matter rather than generated by internal dynamos. This is puzzling from a theoretical point of view, since the reconnection of the radial field across the midplane should cause an outward drift on timescales much shorter than the accretion time. We suggest that a combination of effects are responsible for reducing the radial field near the midplane, causing efficient inward advection of the poloidal field. Magnetic buoyancy in subsonic turbulence pushes the field lines away from the midplane, decreasing the large-scale radial field in the main body of the disk. In magneto-rotationally driven turbulence, magnetic buoyancy dominates over the effects of turbulent pumping, which works against it, and turbulent diamagnetism, which works with it, in determining the vertical drift of the magnetic field. Balancing buoyancy with diffusion implies that the bending angle of the large-scale poloidal field can be very large near the surface, as required for outflows, but vanishes near the midplane, which impedes turbulent reconnection and outward diffusion. This effect becomes less efficient as the poloidal flux increases. This suggests that accretion disks are less likely to form jets if they have a modest ratio of outer to inner radii or if the ambient field is very weak. The former effect is probably responsible for the scarcity of jets in cataclysmic variable systems.

ARPA solid state laser and nonlinear materials program

NASA Astrophysics Data System (ADS)

Moulton, Peter F.

1994-06-01

The Research Division of Schwartz Electro-Optics, as part of the ARPA Solid State Laser and Nonlinear Materials Program, conducted a three-year study 'Erbium-Laser-Based Infrared Sources.' The aim of the study was to improve the understanding of semiconductor-laser-pumped, infrared (IR) solid state lasers based on the trivalent rare-earth ion erbium (Er) doped into a variety of host crystals. The initial program plan emphasized operation of erbium-doped materials on the 2.8-3.0 micrometers laser transition. Pulsed, Q-switched sources using that transition, when employed as a pump source for parametric oscillators, can provide tunable mid-IR energy. The dynamics of erbium lasers are more complex than conventional neodymium (Nd)-doped lasers and we intended to use pump-probe techniques to measure the level and temporal behavior of gain in various materials. To do so we constructed a number of different cw Er-doped lasers as probe sources and employed the Cr:LiSAF(LiSrAlF6) laser as a pulsed pump source that would simulate pulsed diode arrays. We identified the 970-nm wavelength pump band of Er as the most efficient and were able to make use of recently developed cw and pulsed InGaAs strained-quantum-well diode lasers in the effort. At the conclusion of the program we demonstrated the first pulsed diode bar pumping of the most promising materials for pulsed operation, the oxide garnets YSGG and GGG and the fluoride BaY2F8.

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

NASA Astrophysics Data System (ADS)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could be the basis for a new type of electrically pumped mid - to far-infrared semiconductor laser.

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

NASA Astrophysics Data System (ADS)

Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

2016-10-01

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (< 100 psec), a regime that is not accessible in semiconductors using traditional Hanle techniques. The measurements were carried out on epitaxial Heusler alloy (Co2FeSi or Co2MnSi)/n-GaAs heterostructures. Lateral spin valve devices were fabricated by electron beam and photolithography. We compare measurements carried out by the new FMR-based technique with traditional non-local and three-terminal Hanle measurements. A full model appropriate for the measurements will be introduced, and a broader discussion in the context of spin pumping experimenments will be included in the talk. The new technique provides a simple and powerful means for detecting spin accumulation at high temperatures. Reference: C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

High efficiency carrier multiplication in PbSe nanocrystals: implications for solar energy conversion.

PubMed

Schaller, R D; Klimov, V I

2004-05-07

We demonstrate for the first time that impact ionization (II) (the inverse of Auger recombination) occurs with very high efficiency in semiconductor nanocrystals (NCs). Interband optical excitation of PbSe NCs at low pump intensities, for which less than one exciton is initially generated per NC on average, results in the formation of two or more excitons (carrier multiplication) when pump photon energies are more than 3 times the NC band gap energy. The generation of multiexcitons from a single photon absorption event is observed to take place on an ultrafast (picosecond) time scale and occurs with up to 100% efficiency depending upon the excess energy of the absorbed photon. Efficient II in NCs can be used to considerably increase the power conversion efficiency of NC-based solar cells.

Hanle model of a spin-orbit coupled Bose-Einstein condensate of excitons in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Andreev, S. V.; Nalitov, A. V.

2018-04-01

We present a theoretical model of a driven-dissipative spin-orbit coupled Bose-Einstein condensate of indirect excitons in semiconductor quantum wells (QW's). Our steady-state solution of the problem shares analogies with the Hanle effect in an optical orientation experiment. The role of the spin pump in our case is played by Bose-stimulated scattering into a linearly-polarized ground state and the depolarization occurs as a result of exchange interaction between electrons and holes. Our theory agrees with the recent experiment [A. A. High et al., Phys. Rev. Lett. 110, 246403 (2013), 10.1103/PhysRevLett.110.246403], where spontaneous emergence of spatial coherence and polarization textures have been observed. As a complementary test, we discuss a configuration where an external magnetic field is applied in the structure plane.

H+-type and OH--type biological protonic semiconductors and complementary devices

NASA Astrophysics Data System (ADS)

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

2013-10-01

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH- as proton holes. Discriminating between H+ and OH- transport has been elusive. Here, H+ and OH- transport is achieved in polysaccharide- based proton wires and devices. A H+- OH- junction with rectifying behaviour and H+-type and OH--type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH- to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

H+-type and OH−-type biological protonic semiconductors and complementary devices

PubMed Central

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

2013-01-01

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems. PMID:24089083

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

NASA Technical Reports Server (NTRS)

Wang, W. B.; Cavicchia, M. A.; Alfano, R. R.

1996-01-01

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity.

PubMed

Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun

2017-10-16

We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

Reliability of Semiconductor Laser Packaging in Space Applications

NASA Technical Reports Server (NTRS)

Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

2008-01-01

A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

Controlling Spin Coherence with Semiconductor Nanostructures

NASA Astrophysics Data System (ADS)

Awschalom, David D.

We present two emerging opportunities for manipulating and communicating coherent spin states in semiconductors. First, we show that semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities — a new and promising research field — have revealed novel effects such as polarization beats, stimulated spin scattering, and giant Faraday rotation. Here, we study the electron spin dynamics in optically-pumped GaAs microdisk lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the disks, and observe an enhancement of the spin coherence time when the optical excitation is in resonance with a high quality (Q ~ 5000) lasing mode.1 This resonant enhancement, contrary to expectations from the observed trend in the carrier recombination time, is then manipulated by altering the cavity design and dimensions. In analogy to devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide novel pathways towards spin dependent quantum optoelectronics. In a second example, the nitrogen-vacancy (N-V) center in diamond has garnered interest as a room-temperature solid-state system not only for exploring electronic and nuclear spin phenomena but also as a candidate for spin-based quantum information processing. Spin coherence times of up to 50 microseconds have been reported for ensembles of N-V centers and a two-qubit gate utilizing the electron spin of a N-V center and the nuclear spin of a nearby C-13 atom has been demonstrated. Here, we present experiments using angle-resolved magneto-photoluminescence microscopy to investigate anisotropic spin interactions of single N-V centers in diamond at room temperature.2 Negative peaks in the photoluminescence intensity are observed as a function of both magnetic field magnitude and angle, and can be explained by coherent spin precession and anisotropic relaxation at spin-level anticrossings. Additionally, precise field alignment with the symmetry axis of a single N-V center reveals the resonant magnetic dipolar coupling of a single "bright" electron spin of an N-V center to small numbers of "dark" spins of nitrogen defects in its immediate vicinity, which are otherwise undetected by photoluminescence. Most recently, we are exploring the possibility of utilizing this magnetic dipole coupling between bright and dark spins to couple two spatially separated single N-V center spins by means of intermediate nitrogen spins. Note from Publisher: This article contains the abstract only.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

PubMed

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Active Enhancement of Slow Light Based on Plasmon-Induced Transparency with Gain Materials.

PubMed

Zhang, Zhaojian; Yang, Junbo; He, Xin; Han, Yunxin; Zhang, Jingjing; Huang, Jie; Chen, Dingbo; Xu, Siyu

2018-06-03

As a plasmonic analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has drawn more attention due to its potential of realizing on-chip sensing, slow light and nonlinear effect enhancement. However, the performance of a plasmonic system is always limited by the metal ohmic loss. Here, we numerically report a PIT system with gain materials based on plasmonic metal-insulator-metal waveguide. The corresponding phenomenon can be theoretically analyzed by coupled mode theory (CMT). After filling gain material into a disk cavity, the system intrinsic loss can be compensated by external pump beam, and the PIT can be greatly fueled to achieve a dramatic enhancement of slow light performance. Finally, a double-channel enhanced slow light is introduced by adding a second gain disk cavity. This work paves way for a potential new high-performance slow light device, which can have significant applications for high-compact plasmonic circuits and optical communication.

Adhesion and interfacial fracture toughness between hard and soft materials

NASA Astrophysics Data System (ADS)

Rahbar, Nima; Wolf, Kurt; Orana, Argjenta; Fennimore, Roy; Zong, Zong; Meng, Juan; Papandreou, George; Maryanoff, Cynthia; Soboyejo, Wole

2008-11-01

This paper presents the results of a combined experimental and theoretical study of adhesion between hard and soft layers that are relevant to medical devices such as drug-eluting stents and semiconductor applications. Brazil disk specimens were used to measure the interfacial fracture energies between model parylene C and 316L stainless steel over a wide range of mode mixities. The trends in the overall fracture energies are predicted using a combination of adhesion theories and fracture mechanics concepts. The measured interfacial fracture energies are shown to be in good agreement with the predictions.

On The Stability Of Model Flows For Chemical Vapour Deposition

NASA Astrophysics Data System (ADS)

Miller, Robert

2016-11-01

The flow in a chemical vapour deposition (CVD) reactor is assessed. The reactor is modelled as a flow over an infinite-radius rotating disk, where the mean flow and convective instability of the disk boundary layer are measured. Temperature-dependent viscosity and enforced axial flow are used to model the steep temperature gradients present in CVD reactors and the pumping of the gas towards the disk, respectively. Increasing the temperature-dependence parameter of the fluid viscosity (ɛ) results in an overall narrowing of the fluid boundary layer. Increasing the axial flow strength parameter (Ts) accelerates the fluid both radially and axially, while also narrowing the thermal boundary layer. It is seen that when both effects are imposed, the effects of axial flow generally dominate those of the viscosity temperature dependence. A local stability analysis is performed and the linearized stability equations are solved using a Galerkin projection in terms of Chebyshev polynomials. The neutral stability curves are then plotted for a range of ɛ and Ts values. Preliminary results suggest that increasing Ts has a stabilising effect on both type I and type II stationary instabilities, while small increases in ɛ results in a significant reduction to the critical Reynolds number.

Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

DTIC Science & Technology

1987-09-01

laser diode arrays are intended to be used as an optical pump for solid state yttrium aluminum garnet (YAG) lasers. In particular, linear uniform...corresponds to about . , 8080A. Such thin layer structures, while difficult to grow by such conventional growth methods as liquid phase epitaxy ( LPE ...lower yet than for DH lasers grown by LPE . , - Conventional self-aligned stripe laser This structure is formed by growing (on an n-type GaAs substrate

Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT)

DTIC Science & Technology

2013-02-01

restricted at the longer wavelengths , compared to QCLs due to band filling.9 In the short-wave and mid-wave infrared wavelengths , their low T0...the conduction subband positions are plotted relative to the lowest electronic subband in Fig. 1(b). In the infrared wavelength regime, Eg is...although the noise floor of this detector is 0.01 on this arbitrary scale. Finally, we also record spectra at each temperature and pump level to confirm

Terahertz Sideband-tuned Quantum Cascade Laser Radiation

DTIC Science & Technology

2008-03-31

resolution of 2 MHz in CW regime was observed. ©2008 Optical Society of America OCIS codes: (140.5965) Semiconductor lasers , quantum cascade...diode,” Opt. Lett. 29, 1632 (2004). 6. A. Baryshev, et.al., “ Phase locking and spectral linewidth of a two-mode terahertz quantum cascade laser ,” Appl... optically pumped gas laser . With further improvements in power and spatial mode quality, it should be possible to lock a TQCL to the harmonic of an ultra

Ultra-broad band, low power, highly efficient coherent wavelength conversion in quantum dot SOA.

PubMed

Contestabile, G; Yoshida, Y; Maruta, A; Kitayama, K

2012-12-03

We report broadband, all-optical wavelength conversion over 100 nm span, in full S- and C-band, with positive conversion efficiency with low optical input power exploiting dual pump Four-Wave-Mixing in a Quantum Dot Semiconductor Optical Amplifier (QD-SOA). We also demonstrate by Error Vector Magnitude analysis the full transparency of the conversion scheme for coherent modulation formats (QPSK, 8-PSK, 16-QAM, OFDM-16QAM) in the whole C-band.

Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tran, T.-T. D.; Chen, R.; Ng, K. W.

2014-09-15

As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.

Picosecond Nd:BaY2F8 laser discretely tunable around 1 μm

NASA Astrophysics Data System (ADS)

Agnesi, A.; Pirzio, F.; Reali, G.; Toncelli, A.; Tonelli, M.

2010-09-01

Passive mode-locking of a diode-pumped Nd:BaY2F8 (Nd:BaYF) was achieved on four lines in the range 1040-1074 nm, employing a semiconductor saturable absorber mirror (SAM). Nearly Fourier-limited pulses with durations of 2.6 to 7.2 ps and output power ≈50 mW were generated in a dispersion-controlled resonator using a single prism for wavelength selection, tuning and dispersion management.

Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borgwardt, M., E-mail: mario.borgwardt@helmholtz-berlin.de; Sippel, P.; Eichberger, R.

Excitation correlation photoluminescence (ECPL) measurements are often analyzed in the approximation of a cross correlation of charge carrier populations generated by the two delayed pulses. In semiconductors, this approach is valid for a linear non-radiative recombination path, but not for a non-linear recombination rate as in the general Shockley-Read-Hall recombination scenario. Here, the evolution of the ECPL signal was studied for deep trap recombination following Shockley-Read-Hall statistics. Analytic solutions can be obtained for a fast minority trapping regime and steady state recombination. For the steady state case, our results show that the quadratic radiative term plays only a minor role,more » and that the shape of the measured signal is mostly determined by the non-linearity of the recombination itself. We find that measurements with unbalanced intense pump and probe pulses can directly provide information about the dominant non-radiative recombination mechanism. The signal traces follow the charge carrier concentrations, despite the complex origins of the signal, thus showing that ECPL can be applied to study charge carrier dynamics in semiconductors without requiring elaborate calculations. The model is compared with measurements on a reference sample with alternating layers of InGaAs/InAlAs that were additionally cross-checked with time resolved optical pump terahertz probe measurements and found to be in excellent agreement.« less

Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

PubMed Central

2016-01-01

Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

On the Behaviour of Porcine Adipose and Skeletal Muscle Tissues under Shock Compression

DTIC Science & Technology

2012-09-01

74 (breech pressure) shots. Secondly, a smaller vacuum pump evacuates the air within both the barrel of the gun and a sealed section mounted at the end...pressure. To fire the gun this cavity was rapidly evacuated, allowing first the disk adjacent to the breech and then that adjacent to the barrel to...of the gun , i.e. the barrel section. Such action allowed for a much stronger vacuum to be created than within the rearward expansion chamber and

Optimum design on refrigeration system of high-repetition-frequency laser

NASA Astrophysics Data System (ADS)

Li, Gang; Li, Li; Jin, Yezhou; Sun, Xinhua; Mao, Shaojuan; Wang, Yuanbo

2014-12-01

A refrigeration system with fluid cycle, semiconductor cooler and air cooler is designed to solve the problems of thermal lensing effect and unstable output of high-repetition-frequency solid-state lasers. Utilizing a circulating water pump, water recycling system carries the water into laser cavity to absorb the heat then get to water cooling head. The water cooling head compacts cold spot of semiconductor cooling chips, so the heat is carried to hot spot which contacts the radiating fins, then is expelled through cooling fan. Finally, the cooled water return to tank. The above processes circulate to achieve the purposes of highly effective refrigeration in miniative solid-state lasers.The refrigeration and temperature control components are designed strictly to ensure refrigeration effect and practicability. we also set up a experiment to test the performances of this refrigeration system, the results show that the relationship between water temperature and cooling power of semiconductor cooling chip is linear at 20°C-30°C (operating temperature range of Nd:YAG), the higher of the water temperature, the higher of cooling power. According to the results, cooling power of single semiconductor cooling chip is above 60W, and the total cooling power of three semiconductor cooling chips achieves 200W that will satisfy the refrigeration require of the miniative solid-state lasers.The performance parameters of laser pulse are also tested, include pulse waveform, spectrogram and laser spot. All of that indicate that this refrigeration system can ensure the output of high-repetition-frequency pulse whit high power and stability.

Moderate high power 1 to 20μs and kHz Ho:YAG thin disk laser pulses for laser lithotripsy

NASA Astrophysics Data System (ADS)

Renz, Günther

2015-02-01

An acousto-optically or self-oscillation pulsed thin disk Ho:YAG laser system at 2.1 μm with an average power in the 10 W range will be presented for laser lithotripsy. In the case of cw operation the thin disk Ho:YAG is either pumped with InP diode stacks or with a thulium fiber laser which leads to a laser output power of 20 W at an optical-to-optical efficiency of 30%. For the gain switched mode of operation a modulated Tm-fiber laser is used to produce self-oscillation pulses. A favored pulse lengths for uric acid stone ablation is known to be at a few μs pulse duration which can be delivered by the thin disk laser technology. In the state of the art laser lithotripter, stone material is typically ablated with 250 to 750 μs pulses at 5 to 10 Hz and with pulse energies up to a few Joule. The ablation mechanism is performed in this case by vaporization into stone dust and fragmentation. With the thin disk laser technology, 1 to 20 μs-laser pulses with a repetition rate of a few kHz and with pulse energies in the mJ-range are available. The ablation mechanism is in this case due to a local heating of the stone material with a decomposition of the crystalline structure into calcium carbonate powder which can be handled by the human body. As a joint process to this thermal effect, imploding water vapor bubbles between the fiber end and the stone material produce sporadic shock waves which help clear out the stone dust and biological material.

Dynamics of Diffusion Flames in von Karman Swirling Flows Studied

NASA Technical Reports Server (NTRS)

Nayagam, Vedha; Williams, Forman A.

2002-01-01

Von Karman swirling flow is generated by the viscous pumping action of a solid disk spinning in a quiescent fluid media. When this spinning disk is ignited in an oxidizing environment, a flat diffusion flame is established adjacent to the disk, embedded in the boundary layer (see the preceding illustration). For this geometry, the conservation equations reduce to a system of ordinary differential equations, enabling researchers to carry out detailed theoretical models to study the effects of varying strain on the dynamics of diffusion flames. Experimentally, the spinning disk burner provides an ideal configuration to precisely control the strain rates over a wide range. Our original motivation at the NASA Glenn Research Center to study these flames arose from a need to understand the flammability characteristics of solid fuels in microgravity where slow, subbuoyant flows can exist, producing very small strain rates. In a recent work (ref. 1), we showed that the flammability boundaries are wider and the minimum oxygen index (below which flames cannot be sustained) is lower for the von Karman flow configuration in comparison to a stagnation-point flow. Adding a small forced convection to the swirling flow pushes the flame into regions of higher strain and, thereby, decreases the range of flammable strain rates. Experiments using downward facing, polymethylmethacrylate (PMMA) disks spinning in air revealed that, close to the extinction boundaries, the flat diffusion flame breaks up into rotating spiral flames (refs. 2 and 3). Remarkably, the dynamics of these spiral flame edges exhibit a number of similarities to spirals observed in biological systems, such as the electric pulses in cardiac muscles and the aggregation of slime-mold amoeba. The tail of the spiral rotates rigidly while the tip executes a compound, meandering motion sometimes observed in Belousov-Zhabotinskii reactions.

Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

2000-01-01

Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V

2013-05-31

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible tomore » use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)« less

SEMICONDUCTOR INTEGRATED CIRCUITS: An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

NASA Astrophysics Data System (ADS)

Fangxiong, Chen; Min, Lin; Heping, Ma; Hailong, Jia; Yin, Shi; Forster, Dai

2009-08-01

An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS (global positioning system) and Bluetooth systems.

Ultralow-threshold multiphoton-pumped lasing from colloidal nanoplatelets in solution

PubMed Central

Li, Mingjie; Zhi, Min; Zhu, Hai; Wu, Wen-Ya; Xu, Qing-Hua; Jhon, Mark Hyunpong; Chan, Yinthai

2015-01-01

Although multiphoton-pumped lasing from a solution of chromophores is important in the emerging fields of nonlinear optofluidics and bio-photonics, conventionally used organic dyes are often rendered unsuitable because of relatively small multiphoton absorption cross-sections and low photostability. Here, we demonstrate highly photostable, ultralow-threshold multiphoton-pumped biexcitonic lasing from a solution of colloidal CdSe/CdS nanoplatelets within a cuvette-based Fabry–Pérot optical resonator. We find that colloidal nanoplatelets surprisingly exhibit an optimal lateral size that minimizes lasing threshold. These nanoplatelets possess very large gain cross-sections of 7.3 × 10−14 cm2 and ultralow lasing thresholds of 1.2 and 4.3 mJ cm−2 under two-photon (λexc=800 nm) and three-photon (λexc=1.3 μm) excitation, respectively. The highly polarized emission from the nanoplatelet laser shows no significant photodegradation over 107 laser shots. These findings constitute a more comprehensive understanding of the utility of colloidal semiconductor nanoparticles as the gain medium in high-performance frequency-upconversion liquid lasers. PMID:26419950

Orbiting Water Molecules Dance to Tune Of Galaxy's "Central Engine," Astronomers Say

NASA Astrophysics Data System (ADS)

2000-01-01

A disk of water molecules orbiting a supermassive black hole at the core of a galaxy 60 million light-years away is "reverberating" in response to variations in the energy output from the galaxy's powerful "central engine" close to the black hole, astronomers say. The team of astronomers used the National Science Foundation's (NSF) Very Large Array (VLA) radio telescope in New Mexico and the 100-meter-diameter radio telescope of the Max Planck Institute for Radio Astronomy at Effelsberg, Germany, to observe the galaxy NGC 1068 in the constellation Cetus. They announced their findings today at the American Astronomical Society's meeting in Atlanta. The water molecules, in a disk some 5 light-years in diameter, are acting as a set of giant cosmic radio-wave amplifiers, called masers. Using energy radiated by the galaxy's "central engine," the molecules strengthen, or brighten, radio emission at a particular frequency as seen from Earth. "We have seen variations in the radio 'brightness' of these cosmic amplifiers that we believe were caused by variations in the energy output of the central engine," said Jack Gallimore, an astronomer at the National Radio Astronomy Observatory (NRAO) in Charlottesville, VA. "This could provide us with a valuable new tool for learning about the central engine itself," he added. Gallimore worked with Stefi Baum of the Space Telescope Science Institute in Baltimore, MD; Christian Henkel of the Max Planck Institute for Radio Astronomy in Bonn, Germany; Ian Glass of the South African Astronomical Observatory; Mark Claussen of the NRAO in Socorro, NM; and Almudena Prieto of the European Southern Observatory in Munich, Germany. "Our observations show that NGC 1068 is the second-known case of a giant disk of water molecules orbiting a supermassive black hole at a galaxy's core," Gallimore said. The first case was the galaxy NGC 4258 (Messier 106), whose disk of radio-amplifying water molecules was measured by the NSF's Very Long Baseline Array (VLBA) radio telescope in 1995. Further VLBA observations of NGC 4258 allowed astronomers to calculate an extremely accurate distance to that galaxy last year. "We're excited to find this phenomenon in a second galaxy, but we're also tantalized by the evidence that these masers respond to variations of the central engine," Gallimore said. In order to amplify radio signals, masers, like their visible-light counterparts, lasers, require a source of energy, called the pumping energy. The scientists believe the masers in NGC 1068 get that pumping energy from a highly-energetic, superhot disk of material that is being pulled into the black hole. That disk, called an accretion disk, emits X-rays that the astronomers think start a chain of events that powers the masers. Such accretion disks can be unstable, dramatically changing their energy output from time to time. "When the accretion disk puts out more energy, the masers should brighten, and when it puts out less energy, they should get fainter. If the accretion disk gets too bright, however, water molecules are destroyed and the masers turn off. We think that's what we're seeing in this galaxy," Gallimore said. "We want to watch this in the future to learn more, not only about the masers, but also about the accretion disk itself," he said. The strongest evidence that the masers are responding to variations in the output of the central engine came from watching variations in the brightness of masers on opposite sides of the water molecule disk. The masers on both sides of the molecular disk, some 5 light-years across, brightened within about two weeks of each other. "If this were caused by something within that molecular disk itself, it would take about 10,000 years to affect both sides of the disk, because of the orbital times involved. However, both sides of the disk are the same distance from the central engine, so they can both respond to the central engine simultaneously," Gallimore explained. The black hole at NGC 1068's center, the scientists say, is about 10 million times more massive than the Sun. NGC 1068 also is known as Messier 77 (M77), one of the objects listed in French astronomer Charles Messier's catalog of non-stellar objects. First observed in 1780, it appeared in the version of Messier's catalog published in 1781. In 1914, Lowell Observatory astronomer Vesto Slipher measured the Doppler shift in the galaxy's light, showing that the galaxy is receding from Earth at a speed of about 1,100 kilometers per second. The galaxy's water masers, which amplify radio signals at a frequency of 22 GHz, were discovered in 1984. The galaxy is visible in moderate-sized amateur telescopes. The National Radio Astronomy Observatory is a facility of the National Science Foundation, operated under cooperative agreement by Associated Universities, Inc.

Design of a Sub-Picosecond Jitter with Adjustable-Range CMOS Delay-Locked Loop for High-Speed and Low-Power Applications

PubMed Central

Abdulrazzaq, Bilal I.; Ibrahim, Omar J.; Kawahito, Shoji; Sidek, Roslina M.; Shafie, Suhaidi; Yunus, Nurul Amziah Md.; Lee, Lini; Halin, Izhal Abdul

2016-01-01

A Delay-Locked Loop (DLL) with a modified charge pump circuit is proposed for generating high-resolution linear delay steps with sub-picosecond jitter performance and adjustable delay range. The small-signal model of the modified charge pump circuit is analyzed to bring forth the relationship between the DLL’s internal control voltage and output time delay. Circuit post-layout simulation shows that a 0.97 ps delay step within a 69 ps delay range with 0.26 ps Root-Mean Square (RMS) jitter performance is achievable using a standard 0.13 µm Complementary Metal-Oxide Semiconductor (CMOS) process. The post-layout simulation results show that the power consumption of the proposed DLL architecture’s circuit is 0.1 mW when the DLL is operated at 2 GHz. PMID:27690040

Dependence of Initial Oxygen Concentration on Ozone Yield Using Inductive Energy Storage System Pulsed Power Generator

NASA Astrophysics Data System (ADS)

Go, Tomio; Tanaka, Yasushi; Yamazaki, Nobuyuki; Mukaigawa, Seiji; Takaki, Koichi; Fujiwara, Tamiya

Dependence of initial oxygen concentration on ozone yield using streamer discharge reactor driven by an inductive energy storage system pulsed power generator is described in this paper. Fast recovery type diodes were employed as semiconductor opening switch to interrupt a circuit current within 100 ns. This rapid current change produced high-voltage short pulse between a secondary energy storage inductor. The repetitive high-voltage short pulse was applied to a 1 mm diameter center wire electrode placed in a cylindrical pulse corona reactor. The streamer discharge successfully occurred between the center wire electrode and an outer cylinder ground electrode of 2 cm inner diameter. The ozone was produced with the streamer discharge and increased with increasing pulse repetition rate. The ozone yield changed in proportion to initial oxygen concentration contained in the injected gas mixture at 800 ns forward pumping time of the current. However, the decrease of the ozone yield by decreasing oxygen concentration in the gas mixture at 180 ns forward pumping time of the current was lower than the decrease at 800 ns forward pumping time of the current. This dependence of the initial oxygen concentration on ozone yield at 180 ns forward pumping time is similar to that of dielectric barrier discharge reactor.

A UV-to-NIR Study of Molecular Gas in the Dust Cavity around RY Lupi

NASA Astrophysics Data System (ADS)

Arulanantham, N.; France, K.; Hoadley, K.; Manara, C. F.; Schneider, P. C.; Alcalá, J. M.; Banzatti, A.; Günther, H. M.; Miotello, A.; van der Marel, N.; van Dishoeck, E. F.; Walsh, C.; Williams, J. P.

2018-03-01

We present a study of molecular gas in the inner disk (r< 20 {au}) around RY Lupi, with spectra from HST-COS, HST-STIS, and VLT-CRIRES. We model the radial distribution of flux from hot gas in a surface layer between r = 0.1–10 au, as traced by Lyα-pumped H2. The result shows H2 emission originating in a ring centered at ∼3 au that declines within r < 0.1 au, which is consistent with the behavior of disks with dust cavities. An analysis of the H2 line shapes shows that a two-component Gaussian profile ({FWHM}}broad,{{{H}}}2}=105 +/- 15 {km} {{{s}}}-1{FWHM}}narrow,{{{H}}}2}=43+/- 13 {km} {{{s}}}-1) is statistically preferred to a single-component Gaussian. We interpret this as tentative evidence for gas emitting from radially separated disk regions (< {r}broad,{{{H}}}2}> ∼ 0.4+/- 0.1 {au};< {r}narrow,{{{H}}}2}> ∼ 3+/- 2 {au}). The 4.7 μm 12CO emission lines are also well fit by two-component profiles (< {r}broad,{CO}}> =0.4+/- 0.1 {au};< {r}narrow,{CO}}> =15+/- 2 {au}). We combine these results with 10 μm observations to form a picture of gapped structure within the mm-imaged dust cavity, providing the first such overview of the inner regions of a young disk. The HST SED of RY Lupi is available online for use in modeling efforts.

Development of a MeV proton beam irradiation system.

PubMed

Park, Bum-Sik; Cho, Yong-Sub; Hong, In-Seok

2008-02-01

A proton beam irradiation system for the application of the MeV class proton beam, such as an implantation for a power semiconductor device and a smart-cut technology for a semiconductor production process, has been developed. This system consists of a negative ion source, an Einzel lens for a low energy beam transport, accelerating tubes, a gas stripper, a Cockroft-Walton high voltage power supply with 1 MV, a vacuum pumping system, and a high pressure insulating gas system. The negative hydrogen ion source is based on TRIUMF's design. Following the tandem accelerator, a pair of magnets is installed for raster scanning of the MeV proton beam to obtain a uniform irradiation pattern on the target. The system is 7 m long from the ion source to the target and is optimized for the proton beam irradiation. The details of the system development will be described.

Large polarization-dependent exciton optical Stark effect in lead iodide perovskites

PubMed Central

Yang, Ye; Yang, Mengjin; Zhu, Kai; Johnson, Justin C.; Berry, Joseph J.; van de Lagemaat, Jao; Beard, Matthew C.

2016-01-01

A strong interaction of a semiconductor with a below-bandgap laser pulse causes a blue-shift of the bandgap transition energy, known as the optical Stark effect. The energy shift persists only during the pulse duration with an instantaneous response time. The optical Stark effect has practical relevance for applications, including quantum information processing and communication, and passively mode-locked femtosecond lasers. Here we demonstrate that solution-processable lead-halide perovskites exhibit a large optical Stark effect that is easily resolved at room temperature resulting from the sharp excitonic feature near the bandedge. We also demonstrate that a polarized pump pulse selectively shifts one spin state producing a spin splitting of the degenerate excitonic states. Such selective spin manipulation is an important prerequisite for spintronic applications. Our result implies that such hybrid semiconductors may have great potential for optoelectronic applications beyond photovoltaics. PMID:27577007

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted simultaneously with native fluorescence spectroscopy to provide high levels of sensitivity and specificity in the same instrument.

Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

NASA Astrophysics Data System (ADS)

Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

2016-11-01

Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions.

Large polarization-dependent exciton optical Stark effect in lead iodide perovskites

DOE PAGES

Yang, Ye; Yang, Mengjin; Zhu, Kai; ...

2016-08-31

A strong interaction of a semiconductor with a below-bandgap laser pulse causes a blue-shift of the bandgap transition energy, known as the optical Stark effect. The energy shift persists only during the pulse duration with an instantaneous response time. The optical Stark effect has practical relevance for applications, including quantum information processing and communication, and passively mode-locked femtosecond lasers. Here we demonstrate that solution-processable lead-halide perovskites exhibit a large optical Stark effect that is easily resolved at room temperature resulting from the sharp excitonic feature near the bandedge. We also demonstrate that a polarized pump pulse selectively shifts one spinmore » state producing a spin splitting of the degenerate excitonic states. Such selective spin manipulation is an important prerequisite for spintronic applications. Lastly, our result implies that such hybrid semiconductors may have great potential for optoelectronic applications beyond photovoltaics.« less

Raman Scattering in the Magnetized Semiconductor Plasma

NASA Astrophysics Data System (ADS)

Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

2005-04-01

Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

Raman Scattering in the Magnetized Semiconductor Plasma

NASA Astrophysics Data System (ADS)

Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

Selection of lasing direction in single mode semiconductor square ring cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jin-Woong; Kim, Kyoung-Youm; Moon, Hee-Jong

We propose and demonstrate a selection scheme of lasing direction by imposing a loss imbalance structure into the single mode square ring cavity. The control of the traveling direction is realized by introducing a taper-step section in one of the straight waveguides of the square ring cavity. It was shown by semi-analytic calculation that the taper-step section in the cavity provides effective loss imbalance between two travelling directions as the round trip repeats. Various kinds of square cavities were fabricated using InGaAsP/InGaAs multiple quantum well semiconductor materials in order to test the direction selectivity while maintaining the single mode. Wemore » also measured the pump power dependent lasing spectra to investigate the maintenance property of the lasing direction. The experimental results demonstrated that the proposed scheme is an efficient means for a unidirectional lasing in a single mode laser.« less

Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method

NASA Astrophysics Data System (ADS)

Fan, Fan; Yu, Yueyang; Amiri, Seyed Ebrahim Hashemi; Quandt, David; Bimberg, Dieter; Ning, C. Z.

2017-04-01

Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ03 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Reid, Ray D. (Inventor); Hug, William F. (Inventor)

2010-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted simultaneously with native fluorescence spectroscopy to provide high levels of sensitivity and specificity in the same instrument.

Low Level Laser Therapy for Patients with Cervical Disk Hernia

PubMed Central

Takahashi, Hiroshi; Okuni, Ikuko; Ushigome, Nobuyuki; Harada, Takashi; Tsuruoka, Hiroshi; Ohshiro, Toshio; Sekiguchi, Masayuki; Musya, Yoshiro

2012-01-01

Background and Aims: In previous studies we have reported the benefits of low level laser therapy (LLLT) for chronic shoulder joint pain, elbow, hand and finger pain, and low back pain. The present study is a report on the effects of LLLT for chronic neck pain. Materials and Methods: Over a 3 year period, 26 rehabilitation department outpatients with chronic neck pain, diagnosed as being caused by cervical disk hernia, underwent treatment applied to the painful area with a 1000 mW semi-conductor laser device delivering at 830 nm in continuous wave, 20.1 J/cm2/point, and three shots were given per session (1 treatment) with twice a week for 4 weeks. Results: 1. A visual analogue scale (VAS) was used to determine the effects of LLLT for chronic pain and after the end of the treatment regimen a significant improvement was observed (p<0.001). 2. After treatment, no significant differences in cervical spine range of motion were observed. 3. Discussions with the patients revealed that in order to receive continued benefits from treatment, it was important for them to be taught how to avoid postures that would cause them neck pain in everyday life. Conclusion: The present study demonstrates that LLLT was an effective form of treatment for neck and back pain caused by cervical disk hernia, reinforced by postural training. PMID:24511189

Phase-Controlled Bistability of a Dark Soliton Train in a Polariton Fluid.

PubMed

Goblot, V; Nguyen, H S; Carusotto, I; Galopin, E; Lemaître, A; Sagnes, I; Amo, A; Bloch, J

2016-11-18

We use a one-dimensional polariton fluid in a semiconductor microcavity to explore the nonlinear dynamics of counterpropagating interacting Bose fluids. The intrinsically driven-dissipative nature of the polariton fluid allows us to use resonant pumping to impose a phase twist across the fluid. When the polariton-polariton interaction energy becomes comparable to the kinetic energy, linear interference fringes transform into a train of solitons. A novel type of bistable behavior controlled by the phase twist across the fluid is experimentally evidenced.

Frequency Stabilization of a Single Mode Terahertz Quantum Cascade Laser to the Kilohertz Level

DTIC Science & Technology

2009-04-27

analog locking circuit was shown to stabilize the beat signal between a 2.408 THz quantum cascade laser and a CH2DOH THz CO2 optically pumped...codes: (140.5965) Semiconductor lasers , quantum cascade; (140.3425) Laser stabilization; (300.3700) Linewidth; (040.2840) Heterodyne . References...Reno, “Frequency and phase - lock control of a 3 THz quantum cascade laser ,” Opt. Lett. 30, 1837-1839 (2005). 10. D. Rabanus, U. U. Graf, M. Philipp

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Towards Realistic Implementations of a Majorana Surface Code.

PubMed

Landau, L A; Plugge, S; Sela, E; Altland, A; Albrecht, S M; Egger, R

2016-02-05

Surface codes have emerged as promising candidates for quantum information processing. Building on the previous idea to realize the physical qubits of such systems in terms of Majorana bound states supported by topological semiconductor nanowires, we show that the basic code operations, namely projective stabilizer measurements and qubit manipulations, can be implemented by conventional tunnel conductance probes and charge pumping via single-electron transistors, respectively. The simplicity of the access scheme suggests that a functional code might be in close experimental reach.

Magnetization dissipation in the ferromagnetic semiconductor (Ga,Mn)As

NASA Astrophysics Data System (ADS)

Hals, Kjetil M. D.; Brataas, Arne

2011-09-01

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included nonperturbatively. In the clean limit, spin pumping from the localized d electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity

DTIC Science & Technology

1992-10-01

laser light is considered planar. In actuality, the HLP 1400 laser diode used in this experiment has a gaussian profile. This approximation is frequently...return beam is in phase with either the light transmitted through or reflected off the rear facet of the diode laser. In Fig. 3.2, E, is the light ...In the first case an anti-reflection coated laser diode was used. It emitted a broadband spectrum without the feedback. The PCM just lowered the

Quasi-CW Laser Diode Bar Life Tests

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Assembling Ordered Nanorod Superstructures and Their Application as Microcavity Lasers

NASA Astrophysics Data System (ADS)

Liu, Pai; Singh, Shalini; Guo, Yina; Wang, Jian-Jun; Xu, Hongxing; Silien, Christophe; Liu, Ning; Ryan, Kevin M.

2017-03-01

Herein we report the formation of multi-layered arrays of vertically aligned and close packed semiconductor nanorods in perfect registry at a substrate using electric field assisted assembly. The collective properties of these CdSexS1-x nanorod emitters are harnessed by demonstrating a relatively low amplified spontaneous emission (ASE) threshold and a high net optical gain at medium pump intensity. The importance of order in the system is highlighted where a lower ASE threshold is observed compared to disordered samples.

Gain-Controlled Erbium-Doped Fiber Amplifier Using Mode-Selective Photonic Lantern

DTIC Science & Technology

2016-01-01

schematic diagram of the MSPL integrated with the FM-EDFA is shown in Fig. 3. Two laser diodes (LDs) at λp = 976 nm are connected to the MSPL through a...to co-directionally core pump the FM-EDFA. A tunable semiconductor laser (Santec TSL-210) was used to provide the signal. An optical isolator was...placed in the signal path to avoid spurious optical reflections that could destabilize the laser . In a similar configuration, the delivered signal was

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power.

PubMed

Rivoire, Kelley; Lin, Ziliang; Hatami, Fariba; Masselink, W Ted; Vucković, Jelena

2009-12-07

We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effciency P(out)/P(2)(in,coupled)=430%/W. The large electronic band gap of GaP minimizes absorption loss, allowing effcient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.

100 J UV glass laser for dynamic compression research

NASA Astrophysics Data System (ADS)

Zweiback, J.; Fochs, S. F.; Bromage, J.; Broege, D.; Cuffney, R.; Currier, Z.; Dorrer, C.; Ehrich, B.; Engler, J.; Guardalben, M.; Kephalos, N.; Marozas, J.; Roides, R.; Zuegel, J.

2017-02-01

A frequency tripled, Nd:Glass laser has been constructed and installed at the Dynamic Compression Sector located at the Advanced Photon Source. This 100-J laser will be used to drive shocks in condensed matter which will then be interrogated by the facility x-ray beam. The laser is designed for reliable operation, utilizing proven designs for all major subsystems. A fiber front-end provides arbitrarily shaped pulses to the amplifier chain. A diode-pumped Nd:glass regenerative amplifier is followed by a four-pass, flashlamp- pumped rod amplifier. The regenerative amplifier produces up to 20 mJ with better than 1% RMS stability. The passively multiplexed four-pass amplifier produces up to 2 J. The final amplifier uses a 15-cm Nd:glass disk amplifier in a six-pass configuration. Over 200 J of infrared energy is produced by the disk amplifier. A KDP Type-II/Type-II frequency tripler configuration, utilizing a dual tripler, converts the 1053-nm laser output to a wavelength of 351 nm and the ultraviolet beam is image relayed to the target chamber. Output energy stability is better than 3%. Smoothing by Spectral Dispersion and polarization smoothing have been optimized to produce a highly uniform focal spot. A distributed phase plate and aspheric lens produce a farfield spot with a measured uniformity of 8.2% RMS. Custom control software collects all data and provides the operator an intuitive interface to operate and maintain the laser.

Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

NASA Astrophysics Data System (ADS)

Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Hakkarainen, Teemu; Kivisaari, Pyry; Lyytikäinen, Jari; Aho, Arto; Tukiainen, Antti; Guina, Mircea; Oksanen, Jani

2017-02-01

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Sculpting oscillators with light within a nonlinear quantum fluid

NASA Astrophysics Data System (ADS)

Tosi, G.; Christmann, G.; Berloff, N. G.; Tsotsis, P.; Gao, T.; Hatzopoulos, Z.; Savvidis, P. G.; Baumberg, J. J.

2012-03-01

Seeing macroscopic quantum states directly remains an elusive goal. Particles with boson symmetry can condense into quantum fluids, producing rich physical phenomena as well as proven potential for interferometric devices. However, direct imaging of such quantum states is only fleetingly possible in high-vacuum ultracold atomic condensates, and not in superconductors. Recent condensation of solid-state polariton quasiparticles, built from mixing semiconductor excitons with microcavity photons, offers monolithic devices capable of supporting room-temperature quantum states that exhibit superfluid behaviour. Here we use microcavities on a semiconductor chip supporting two-dimensional polariton condensates to directly visualize the formation of a spontaneously oscillating quantum fluid. This system is created on the fly by injecting polaritons at two or more spatially separated pump spots. Although oscillating at tunable THz frequencies, a simple optical microscope can be used to directly image their stable archetypal quantum oscillator wavefunctions in real space. The self-repulsion of polaritons provides a solid-state quasiparticle that is so nonlinear as to modify its own potential. Interference in time and space reveals the condensate wavepackets arise from non-equilibrium solitons. Control of such polariton-condensate wavepackets demonstrates great potential for integrated semiconductor-based condensate devices.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

NASA Astrophysics Data System (ADS)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously considered inaccessible.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

NASA Astrophysics Data System (ADS)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Modular, multi-level groundwater sampler

DOEpatents

Nichols, Ralph L.; Widdowson, Mark A.; Mullinex, Harry; Orne, William H.; Looney, Brian B.

1994-01-01

Apparatus for taking a multiple of samples of groundwater or pressure measurements from a well simultaneously. The apparatus comprises a series of chambers arranged in an axial array, each of which is dimensioned to fit into a perforated well casing and leave a small gap between the well casing and the exterior of the chamber. Seals at each end of the container define the limits to the axial portion of the well to be sampled. A submersible pump in each chamber pumps the groundwater that passes through the well casing perforations into the gap from the gap to the surface for analysis. The power lines and hoses for the chambers farther down the array pass through each chamber above them in the array. The seals are solid, water-proof, non-reactive, resilient disks supported to engage the inside surface of the well casing. Because of the modular design, the apparatus provides flexibility for use in a variety of well configurations.

Metallurgical technologies, energy conversion, and magnetohydrodynamic flows

NASA Astrophysics Data System (ADS)

Branover, Herman; Unger, Yeshajahu

The present volume discusses metallurgical applications of MHD, R&D on MHD devices employing liquid working medium for process applications, electromagnetic (EM) modulation of molten metal flow, EM pump performance of superconducting MHD devices, induction EM alkali-metal pumps, a physical model for EM-driven flow in channel-induction furnaces, grain refinement in Al alloys via EM vibrational method, dendrite growth of solidifying metal in dc magnetic field, MHD for mass and heat transfer in single-crystal melt growth, inverse EM shaping, and liquid-metal MHD development in Israel. Also discussed are the embrittlement of steel by lead, an open cycle MHD disk generator, the acceleration of gas-liquid piston flows for molten-metal MHD generators, MHD flow around a cylinder, new MHD drag coefficients, liquid-metal MHD two-phase flow, and two-phase liquid gas mixers for MHD energy conversion. (No individual items are abstracted in this volume)

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

Resonant optical transducers for in-situ gas detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bond, Tiziana C.; Cole, Garrett; Goddard, Lynford

Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10.sup.-9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Resonant optical transducers for in-situ gas detection

DOEpatents

Bond, Tiziana C; Cole, Garrett; Goddard, Lynford

2016-06-28

Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10.sup.-9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Characterization of Deficiencies in the Frequency Domain Forced Response Analysis Technique for Supersonic Turbine Bladed Disks

NASA Technical Reports Server (NTRS)

Brown, Andrew M.; Schmauch, Preston

2012-01-01

Turbine blades in rocket and jet engine turbomachinery experience enormous harmonic loading conditions. These loads result from the integer number of upstream and downstream stator vanes as well as the other turbine stages. Assessing the blade structural integrity is a complex task requiring an initial characterization of whether resonance is possible and then performing a forced response analysis if that condition is met. The standard technique for forced response analysis in rocket engine turbines is to decompose a computational fluid dynamics (CFD).generated flow field into its harmonic components, and to then perform a frequency response analysis at the problematic natural frequencies using cyclically symmetric structural dynamic models. Recent CFD analysis and water-flow testing at NASA/MSFC, though, indicates that this technique may miss substantial harmonic and non ]harmonic excitation sources that become present in complex flows. This complex content can only be captured by a CFD flow field encompassing at least an entire revolution. A substantial development effort to create a series of software programs to enable application of the 360 degree forcing function in a frequency response analysis on cyclic symmetric models has been completed (to be described in a future paper), but the question still remains whether the frequency response analysis itself is capable of capturing the excitation content sufficiently. Two studies comparing frequency response analysis with transient response analysis, therefore, of bladed-disks undergoing this complex flow environment have been performed. The first is of a bladed disk with each blade modeled by simple beam elements and the disk modeled with plates (using the finite element code MSC/NASTRAN). The focus of this model is to be representative of response of realistic bladed disks, and so the dimensions are roughly equivalent to the new J2X rocket engine 1st stage fuel pump turbine. The simplicity of the model allows the CFD load to be able to be readily applied, along with analytical and experimental variations in both the temporal and spatial fourier components of the excitation. In addition, this model is a first step in identifying response differences between transient and frequency forced response analysis techniques. The second phase assesses this difference for a much more realistic solid model of a bladed-disk in order to evaluate the effect of the spatial variation in loading on blade dominated modes. Neither research on the accuracy of the frequency response method when used in this context or a comprehensive study of the effect of test-observed variation on blade forced response have been found in the literature, so this research is a new contribution to practical structural dynamic analysis of gas turbines. The primary excitation of the upstream nozzles interacts with the blades on fuel pump of the J2X causes the 5th Nodal diameter modes to be excited, as explained by Tyler and Sofrin1, so a modal analysis was first performed on the beam/plate model and the 5ND bladed-disk mode at 40167 hz was identified and chosen to be the one excited at resonance (see figure 1). The first forced response analysis with this model focuses on identifying differences between frequency and transient response analyses. A hypothesis going into the analysis was that perhaps the frequency response was enforcing a temporal periodicity that did not really exist, and so therefore it would overestimate the response. As high dynamic response was a considerable source of stress in the J2X, examining this concept could potentially be beneficial for the program.

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on transmission and mobility are quantitatively discussed.

Investigation of the flow in the impeller side clearances of a centrifugal pump with volute casing

NASA Astrophysics Data System (ADS)

Will, Björn-Christian; Benra, Friedrich-Karl; Dohmen, Hans-Josef

2012-06-01

The paper is concerned with the fluid flow in the impeller side clearances of a centrifugal pump with volute casing. The flow conditions in these small axial gaps are of significant importance for a number of effects such as disk friction, leakage losses or hydraulic axial thrust to name but a few. In the investigated single stage pump, the flow pattern in the volute turns out to be asymmetric even at design flow rate. To gain a detailed insight into the flow structure, numerical simulations of the complete pump including the impeller side clearances are accomplished. Additionally, the hydraulic head and the radial pressure distributions in the impeller side clearances are measured and compared with the numerical results. Two configurations of the impeller, either with or without balancing holes, are examined. Moreover, three different operating points, i.e.: design point, part load or overload conditions are considered. In addition, analytical calculations are accomplished to determine the pressure distributions in the impeller side clearances. If accurate boundary conditions are available, the 1D flow models used in this paper can provide reasonable results for the radial static pressure distribution in the impeller side clearances. Furthermore, a counter rotating wake region develops in the rear impeller side clearances in absence of balancing holes which severely affects the inflow and outflow conditions of the cavity in circumferential direction.

Multi-immunosensors based on electrolite-insulator-semiconductor structures for determination of some herbicides

NASA Astrophysics Data System (ADS)

Starodub, Nickolaj F.; Starodub, Valentyna M.; Krivenchuk, Vladimir E.; Shapovalenko, Valentyna F.

2002-02-01

New type of the multi-immune sensor was elaborated. It is based on electrolyte-insulator-semiconductors structures and intended for determination of such herbicides as simazine, atrazine and 2,4-D. The specific antibodies were immobilized on nitrocellulose disks, which were placed in measuring cells. The analysis was fulfilled by sequential saturation of antibodies, left unbound after their exposure to native herbicide in investigated sample, with labelled herbicide. If horse radish peroxidase (HRP) was used as label the sensitivity of this multi-immune sensor was about 5 and 1.25 (mu) g/L for simazine and 2,4-D, respectively. At the changing of HRP by (beta) -glucose oxidase the sensitivity of analysis of these herbicides increased approximately in 5 times. The linear plots of the registered concentrations were in the range of 1,0-150,0 and 0,25-150,0 ng/mL for simazine and 2,4-D respectively. It was recommended to use the developed immune sensor for wide screening of herbicides in environment. The ways for increasing of its sensitivity were proposed.

Effect of Air Cooling of Turbine Disk on Power and Efficiency of Turbine from Turbo Engineering Corporation TT13-18 Turbosupercharger.

NASA Technical Reports Server (NTRS)

Berkey, William E.

1949-01-01

An investigation was conducted to determine the effect of turbine-disk cooling with air on the efficiency and the power output of the radial-flow turbine from the Turbo Engineering Corporation TT13-18 turbosupercharger. The turbine was operated at a constant range of ratios of turbine-inlet total pressure to turbine-outlet static pressure of 1,5 and 2.0, turbine-inlet total pressure of 30 inches mercury absolute, turbine-inlet total temperature of 12000 to 20000 R, and rotor speeds of 6000 to 22,000 rpm, Over the normal operating range of the turbine, varying the corrected cooling-air weight flow from approximately 0,30 to 0.75 pound per second produced no measurable effect on the corrected turbine shaft horsepower or the turbine shaft adiabatic efficiency. Varying the turbine-inlet total temperature from 12000 to 20000 R caused no measurable change in the corrected cooling-air weight flow. Calculations indicated that the cooling-air pumping power in the disk passages was small and was within the limits of the accuracy of the power measurements. For high turbine power output, the power loss to the compressor for compressing the cooling air was approximately 3 percent of the total turbine shaft horsepower.

Monolayer semiconductor nanocavity lasers with ultralow thresholds.

PubMed

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-02

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.

Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensitymore » dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.« less

Monolayer semiconductor nanocavity lasers with ultralow thresholds

NASA Astrophysics Data System (ADS)

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-01

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Ultrafast dynamics of metal plasmons induced by 2D semiconductor excitons in hybrid nanostructure arrays

DOE PAGES

Boulesbaa, Abdelaziz; Babicheva, Viktoriia E.; Wang, Kai; ...

2016-11-17

With the advanced progress achieved in the field of nanotechnology, localized surface plasmons resonances (LSPRs) are actively considered to improve the efficiency of metal-based photocatalysis, photodetection, and photovoltaics. Here, we report on the exchange of energy and electric charges in a hybrid composed of a two-dimensional tungsten disulfide (2D-WS 2) monolayer and an array of aluminum (Al) nanodisks. Femtosecond pump-probe spectroscopy results indicate that within ~830 fs after photoexcitation of the 2D-WS 2 semiconductor, energy transfer from the 2D-WS 2 excitons excites the plasmons of the Al array. Then, upon the radiative and/or nonradiative damping of these excited plasmons, energymore » and/or electron transfer back to the 2D-WS 2 semiconductor takes place as indicated by an increase in the reflected probe at the 2D exciton transition energies at later time-delays. This simultaneous exchange of energy and charges between the metal and the 2D-WS 2 semiconductor resulted in an extension of the average lifetime of the 2D-excitons from ~15 to ~58 ps in absence and presence of the Al array, respectively. Furthermore, the indirectly excited plasmons were found to live as long as the 2D-WS 2 excitons exist. Furthermore, the demonstrated ability to generate exciton-plasmons coupling in a hybrid nanostructure may open new opportunities for optoelectronic applications such as plasmonic-based photodetection and photocatalysis.« less

Optimization of passively mode-locked quasi-continuously diode-pumped Nd:GdVO4 laser in bounce geometry

NASA Astrophysics Data System (ADS)

Frank, Milan; Jelínek, Michal; Kubeček, Václav

2015-01-01

In this paper the operation of pulsed diode-pumped Nd:GdVO4 laser oscillator in bounce geometry passively modelocked using semiconductor saturable absorber mirror (SAM), generating microjoule level picosecond pulses at wavelength of 1063 nm, is reported. Optimization of the output coupling for generation either Q-switched mode locked pulse trains or cavity dumped single pulses with maximum energy was performed, which resulted in extraction of single pulses as short as 10 ps and energy of 20 uJ. In comparison with the previous results obtained with this Nd:GdVO4 oscillator and saturable absorber in transmission mode, the achieved pulse duration is five times shorter. Using different absorbers and parameters of single pulse extraction enables generation of the pulses with duration up to 100 ps with the energy in the range from 10 to 20 μJ.

New laser sources for clinical treatment and diagnostics of neonatal jaundice

NASA Astrophysics Data System (ADS)

Hamza, Mostafa; El-Ahl, Mohammad H. S.; Hamza, Ahmad M.

2001-06-01

An elevated serum bilirubin concentration in the newborn infant presents a therapeutic as well as a diagnostic problem to the physician. It has long been recognized that high levels of bilirubin cause irreversible brain damage and even death. The authors introduce the use of semiconductor diode lasers and diode-pumped solid-state lasers that can be used for solving such diagnostic and therapeutic problems. These new laser sources can improve the ergonomics of using laser, enhance performance capabilities and reduce the cost of employing laser energy to pump bilirubin out of an infant's body. The choice of laser wavelengths follows the principles of bilirubinometry and phototherapy of neonatal jaundice. The wide spread use of these new laser sources for clinical monitoring and treatment of neonatal hyperbilirubinemia will be made possible as each incremental or quantum jump cost reduction is achieved. Our leading clinical experience as well as the selection rules of laser wavelengths will be presented.

An exciton-polariton laser based on biologically produced fluorescent protein

PubMed Central

Dietrich, Christof P.; Steude, Anja; Tropf, Laura; Schubert, Marcel; Kronenberg, Nils M.; Ostermann, Kai; Höfling, Sven; Gather, Malte C.

2016-01-01

Under adequate conditions, cavity polaritons form a macroscopic coherent quantum state, known as polariton condensate. Compared to Wannier-Mott excitons in inorganic semiconductors, the localized Frenkel excitons in organic emitter materials show weaker interaction with each other but stronger coupling to light, which recently enabled the first realization of a polariton condensate at room temperature. However, this required ultrafast optical pumping, which limits the applications of organic polariton condensates. We demonstrate room temperature polariton condensates of cavity polaritons in simple laminated microcavities filled with biologically produced enhanced green fluorescent protein (eGFP). The unique molecular structure of eGFP prevents exciton annihilation even at high excitation densities, thus facilitating polariton condensation under conventional nanosecond pumping. Condensation is clearly evidenced by a distinct threshold, an interaction-induced blueshift of the condensate, long-range coherence, and the presence of a second threshold at higher excitation density that is associated with the onset of photon lasing. PMID:27551686

Detection of the spin injection into silicon by broadband ferromagnetic resonance spectroscopy

NASA Astrophysics Data System (ADS)

Ohshima, Ryo; Dushenko, Sergey; Ando, Yuichiro; Weiler, Mathias; Klingler, Stefan; Huebl, Hans; Shinjo, Teruya; Goennenwein, Sebastian; Shiraishi, Masashi

Silicon (Si) based spintronics was eagerly studied to realize spin metal-oxide-semiconductor field-effect-transistors (MOSFETs) since it has long spin lifetime and gate tunability. The operation of n-type Si spin MOSFET was successfully demonstrated, however, their resistivity is still too low for practical applications and a systematic study of spin injection properties (such as spin lifetime, spin injection efficiency and so on) from the ferromagnet into the Si with different resistivity is awaited for further progress in Si spintronics. In this study, we show the spin injection by spin pumping technique in the NiFe(Py)/Si system. Broadband FMR measurement was carried out to see the enhancement of the Gilbert damping parameter with different resistivity of the Si channel. Additional damping indicated the successful spin injection by spin pumping and observed even for the Si channel with high resistivity, which is necessary for the gate operation of the device.

Multifunctional switching unit for add/drop, wavelength conversion, format conversion, and WDM multicast based on bidirectional LCoS and SOA-loop architecture.

PubMed

Wang, Danshi; Zhang, Min; Qin, Jun; Lu, Guo-Wei; Wang, Hongxiang; Huang, Shanguo

2014-09-08

We propose a multifunctional optical switching unit based on the bidirectional liquid crystal on silicon (LCoS) and semiconductor optical amplifier (SOA) architecture. Add/drop, wavelength conversion, format conversion, and WDM multicast are experimentally demonstrated. Due to the bidirectional characteristic, the LCoS device cannot only multiplex the input signals, but also de-multiplex the converted signals. Dual-channel wavelength conversion and format conversion from 2 × 25Gbps differential quadrature phase-shift-keying (DQPSK) to 2 × 12.5Gbps differential phase-shift-keying (DPSK) based on four-wave mixing (FWM) in SOA is obtained with only one pump. One-to-six WDM multicast of 25Gbps DQPSK signals with two pumps is also achieved. All of the multicast channels are with a power penalty less than 1.1 dB at FEC threshold of 3.8 × 10⁻³.

Towards an 100 Hz X-Ray Laser Station

NASA Astrophysics Data System (ADS)

Tümmler, J.; Stiel, H.; Jung, R.; Janulewicz, K. A.; Nickles, P. V.; Sandner, W.

During the last few years the optimization of pumping schemes of X-ray lasers (XRL) has reached a level where the required pump power could be provided by table-top or even by commercially available laser systems. But the stability of the XRL output signal is limited by that of the pumping lasers and also the repetition rate is at maximum about 10 Hz. Many envisioned applications would however benefit from an improvement of these crucial parameters. A way to overcome this situation could be the use of diode pumped solid state lasers (DPSSL) as drivers. Therefore we are developing a new 100 Hz DPSSL based on Yb:YAG thin disk and CPA technology. This system is based on newly developed efficient diode stacks for 100 Hz repetition rate. According to the common requirements of a transient collisional XRL (here in a grazing incidence pumping scheme -GRIP) the new laser driver has a double beam structure with one beam for plasma performing, delivering an energy at the target in the range of 200 mJ in 200 ps and a second one with > 500 mJ and < 5 ps to heat the plasma. The amplifier system consists of 4 amplifiers of different sizes. For the following XRL operation a water cooled Ag or Mo tape as target for 13.9 nm or 18.9 nm XRL emission was developed. The target speed can be adjusted to the driver laser repetition rate. Parallel to the commissioning the XRL station and first application experiments an upgrade of the driver laser is planned.

Giant thermo-optical relaxation oscillations in millimeter-size whispering gallery mode disk resonators.

PubMed

Diallo, Souleymane; Lin, Guoping; Chembo, Yanne K

2015-08-15

In this Letter, we show that giant thermo-optical oscillations can be triggered in millimeter (mm)-size whispering gallery mode (WGM) disk resonators when they are pumped by a resonant continuous-wave laser. Our resonator is an ultrahigh-Q barium fluoride cavity that features a positive thermo-optic coefficient and a negative thermo-elastic coefficient. We demonstrate for the first time, to our knowledge, that the complex interplay between these two thermic coefficients and the intrinsic Kerr nonlinearity yields very sharp slow-fast relaxation oscillations with a slow timescale that can be exceptionally large, typically of the order of 1 s. We use a time-domain model to gain understanding into this instability, and we find that both the experimental and theoretical results are in excellent agreement. The understanding of these thermal effects is an essential requirement for every WGM-related application and our study demonstrates that even in the case of mm-size resonators, such effects can still be accurately analyzed using nonlinear time-domain models.

STS-48 ESC Earth observation of southwestern corner of the Great Salt Lake

NASA Technical Reports Server (NTRS)

1991-01-01

STS-48 Earth observation of the southwestern corner of the Great Salt Lake, 308 nautical miles below Discovery, Orbiter Vehicle (OV) 103, was provided by the electronic still camera (ESC). While the image is mostly covered with a thin veil of cirrus clouds, many of the surface features can be recognized. The causeway linking the northern tip of the peninsula to the southwest shore of the lake is clearly visible as is the interstate highway. Considerable topographic detail is visible in the snow covered peaks to the south of the lake. The commercial salt pans between the peninsula and the interstate show high contrast with the brightness dependent on the concentration of the brackish water in the pan. Recent heavy rainfall has caused considerable runoff into the lake but the flooding hazard of a few years past no longer exists due to a pumping system that now transfers excess water to the Bonneville Salt Flats. The ESC image was stored on a removable hard disk or small optical disk and

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Fast and slow light property improvement in erbium-doped amplifier

NASA Astrophysics Data System (ADS)

Peng, P. C.; Wu, F. K.; Kao, W. C.; Chen, J.; Lin, C. T.; Chi, S.

2013-01-01

This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.

Space Station - The base for tomorrow's electronic industry

NASA Technical Reports Server (NTRS)

Naumann, Robert J.

1985-01-01

The potential value of space material processing on the Space Station for the electronics industry is examined. The primary advantages of the space environment for producing high-purity semiconductors and electrooptical materials are identified as the virtual absence of gravity (suppressing buoyancy-driven convection in melts and density segregation of alloys) and the availabilty of high vacuum (with high pumping speed and heat rejection). The recent history of material development and processing technology in the electronics industry is reviewed, and the principal features of early space experiments are outlined.

Solid-state lasers for coherent communication and remote sensing

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1992-01-01

Semiconductor-diode laser-pumped solid-state lasers have properties that are superior to other lasers for the applications of coherent communication and remote sensing. These properties include efficiency, reliability, stability, and capability to be scaled to higher powers. We have demonstrated that an optical phase-locked loop can be used to lock the frequency of two diode-pumped 1.06 micron Nd:YAG lasers to levels required for coherent communication. Monolithic nonplanar ring oscillators constructed from solid pieces of the laser material provide better than 10 kHz frequency stability over 0.1 sec intervals. We have used active feedback stabilization of the cavity length of these lasers to demonstrate 0.3 Hz frequency stabilization relative to a reference cavity. We have performed experiments and analysis to show that optical parametric oscillators (OPO's) reproduce the frequency stability of the pump laser in outputs that can be tuned to arbitrary wavelengths. Another measurement performed in this program has demonstrated the sub-shot-noise character of correlations of the fluctuations in the twin output of OPO's. Measurements of nonlinear optical coefficients by phase-matched second harmonic generation are helping to resolve inconsistency in these important parameters.

Advances in 750 nm VECSELs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Saarinen, Esa J.; Ranta, Sanna; Lyytikäinen, Jari; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Guina, Mircea

2017-03-01

Lasers operating in the transmission window of tissue at wavelengths between 700 and 800 nm are needed in numerous medical and biomedical applications, including photodynamic therapy and fluorescence microscopy. However, the performance of diode lasers in this spectral range is limited by the lack of appropriate compound semiconductors. Here, we review our recent research on 750 nm VECSELs. Two approaches to reaching the 750 nm wavelength will be discussed. The first approach relies on intra-cavity frequency doubling a wafer-fused 1500 nm VECSEL. The VECSEL gain chip comprises a GaAs-based DBR and an InP-based gain section, which allows for optical pumping with low-cost commercial diodes at 980 nm. With this scheme we have achieved watt-level output powers and tuning of the laser wavelength over a 40 nm band at around 750 nm. The second approach is direct emission at 750 nm using the AlGaAs/GaAs material system. In this approach visible wavelengths are required for optical pumping. However, the consequent higher costs compared to pumping at 980 nm are mitigated by the more compact laser setup and prospects of doubling the frequency to the ultraviolet range.

Coherent Doppler lidar for automated space vehicle, rendezvous, station-keeping and capture

NASA Technical Reports Server (NTRS)

Dunkin, James A.

1991-01-01

Recent advances in eye-safe, short wavelength solid-state lasers offer real potential for the development of compact, reliable, light-weight, efficient coherent lidar. Laser diode pumping of these devices has been demonstrated, thereby eliminating the need for flash lamp pumping, which has been a major drawback to the use of these lasers in space based applications. Also these lasers now have the frequency stability required to make them useful in coherent lidar, which offers all of the advantages of non-coherent lidar, but with the additional advantage that direct determination of target velocity is possible by measurement of the Doppler shift. By combining the Doppler velocity measurement capability with the inherent high angular resolution and range accuracy of lidar it is possible to construct Doppler images of targets for target motion assessment. A coherent lidar based on a Tm,Ho:YAG 2-micrometer wavelength laser was constructed and successfully field tested on atmospheric targets in 1990. This lidar incorporated an all solid state (laser diode pumped) master oscillator, in conjunction with a flash lamp pumped slave oscillator. Solid-state laser technology is rapidly advancing, and with the advent of high efficiency, high power, semiconductor laser diodes as pump sources, all-solid-state, coherent lidars are a real possibility in the near future. MSFC currently has a feasibility demonstration effort under way which will involve component testing, and preliminary design of an all-solid-state, coherent lidar for automatic rendezvous, and capture. This two year effort, funded by the Director's Discretionary Fund is due for completion in 1992.

Dust production by collisional grinding during Planetesimal-Driven Migration

NASA Astrophysics Data System (ADS)

Salmon, Julien; Walsh, Kevin J.; Levison, Harold F.

2017-10-01

Many main-sequence stars are surrounded by optically thin disks of dust in the absence of any detectable gas (e.g. Su et al. 2006, Meyer et al. 2008). IR and sub-millimeter observations suggest that most of the observed emission comes from grains with sizes between 1-100 microns. Since radiation forces are expected to remove these grains on timescales much shorter than the age of the parent stars (Backman & Parsce 1993, Wyatt 2008), it implies that some process is replenishing the dust, such as collisional grinding. The latter requires large impact velocities between planetesimals, which can be achieved if large objects are dynamically exciting a disk of 1-10km planetesimals. Such debris disks could be hosting ongoing planet formation, and present a powerful tool to test planet formation theories.If a planet is embedded in a gas-free planetesimal disk, the mutual gravitational interactions will force the planet to migrate (e.g. Fernandez & Ip 1984). Planetesimals situated along the direction of migration can be trapped in mean motion resonances (MMRs) with the planet (Malhotra 1993, 1995, Hahn & Malholtra 1999). Planetesimals trapped in such resonances will have their eccentricities pumped to large values as the planet continues to migrate, thereby leading to energetic collisions and dust production (Wyatt 2003, Reche et al. 2008, Mustill & Wyatt 2011).We have performed an extensive suite of simulations in which we explore the likelihood that a given set of disk parameters (mass, surface density slope, number of planetesimals) can sustain planetesimal-driven migration (PDM). We confirm the strong dependence on resolution found in previous works (e.g. Kirsch et al 2009), and find that an embryo to planetesimal mass ratio of 400 is necessary to mitigate the effects of stochasticity, which may cause migration to stall and/or reverse. After having identified disks suitable for sustained PDM, we model their evolution using LIPAD (Levison et al. 2012) taking into account collisional grinding. We will present results on the dust signatures that can be expected from such systems.

Deposit heterogeneity and the dynamics of the organic semiconductors P3HT and PCBM solution under evaporation

NASA Astrophysics Data System (ADS)

Yu, H. P.; Luo, H.; Liu, T. T.; Jing, G. Y.

2015-04-01

The formation of organic semiconductor layer is the key procedure in the manufacture of organic photovoltaic solar cell, in which the natural evaporation of the solvent from the polymer solution plays the essential role for the conversion efficiency. Here, poly(3-hexylthiophene) (P3HT) and fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), as two types of semiconductor polymers, were selected as the active layer to form the deposit by drying the blend solution drops on the substrate. We explored the influences of droplet size and solute concentration on the homogeneity of the deposit. Additionally, the spatial distribution of molecular chains and grains and the instability of the droplet morphology during the drying were investigated. The results showed that the "coffee-ring" phenomenon occurred forming an annular deposit at the outermost edge and the width of the annular ring increased linearly with the concentration of the P3HT solution, until a saturation plateau is approached. On the other hand, the PCBM deposition presented a circular disk at low concentration, but displayed a sudden instability for an irregular perimeter at a critical concentration and there existed a second critical concentration above which the deposit exhibited the return of the stable circular shape. The results have an instructive impact on the performance of the device and the formation of fine structures during the process of printing, film preparation and painting.

Practical aspects of modern interferometry for optical manufacturing quality control: Part 2

NASA Astrophysics Data System (ADS)

Smythe, Robert

2012-07-01

Modern phase shifting interferometers enable the manufacture of optical systems that drive the global economy. Semiconductor chips, solid-state cameras, cell phone cameras, infrared imaging systems, space based satellite imaging and DVD and Blu-Ray disks are all enabled by phase shifting interferometers. Theoretical treatments of data analysis and instrument design advance the technology but often are not helpful towards the practical use of interferometers. An understanding of the parameters that drive system performance is critical to produce useful results. Any interferometer will produce a data map and results; this paper, in three parts, reviews some of the key issues to minimize error sources in that data and provide a valid measurement.

Practical aspects of modern interferometry for optical manufacturing quality control, Part 3

NASA Astrophysics Data System (ADS)

Smythe, Robert A.

2012-09-01

Modern phase shifting interferometers enable the manufacture of optical systems that drive the global economy. Semiconductor chips, solid-state cameras, cell phone cameras, infrared imaging systems, space-based satellite imaging, and DVD and Blu-Ray disks are all enabled by phase-shifting interferometers. Theoretical treatments of data analysis and instrument design advance the technology but often are not helpful toward the practical use of interferometers. An understanding of the parameters that drive the system performance is critical to produce useful results. Any interferometer will produce a data map and results; this paper, in three parts, reviews some of the key issues to minimize error sources in that data and provide a valid measurement.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE PAGES

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.; ...

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Ma, Shaozhen; Chen, Zhe; Dutta, Niloy K.

2009-02-01

A model to study four-wave mixing (FWM) wavelength conversion in InAs-GaAs quantum-dot semiconductor optical amplifier is proposed. Rate equations involving two QD states are solved to simulate the carrier density modulation in the system, results show that the existence of QD excited state contributes to the ultra fast recover time for single pulse response by serving as a carrier reservoir for the QD ground state, its speed limitations are also studied. Nondegenerate four-wave mixing process with small intensity modulation probe signal injected is simulated using this model, a set of coupled wave equations describing the evolution of all frequency components in the active region of QD-SOA are derived and solved numerically. Results show that better FWM conversion efficiency can be obtained compared with the regular bulk SOA, and the four-wave mixing bandwidth can exceed 1.5 THz when the detuning between pump and probe lights is 0.5 nm.

Charge Transfer Dynamics at Dye-Sensitized ZnO and TiO2 Interfaces Studied by Ultrafast XUV Photoelectron Spectroscopy

PubMed Central

Borgwardt, Mario; Wilke, Martin; Kampen, Thorsten; Mähl, Sven; Xiao, Manda; Spiccia, Leone; Lange, Kathrin M.; Kiyan, Igor Yu.; Aziz, Emad F.

2016-01-01

Interfacial charge transfer from photoexcited ruthenium-based N3 dye molecules into ZnO thin films received controversial interpretations. To identify the physical origin for the delayed electron transfer in ZnO compared to TiO2, we probe directly the electronic structure at both dye-semiconductor interfaces by applying ultrafast XUV photoemission spectroscopy. In the range of pump-probe time delays between 0.5 to 1.0 ps, the transient signal of the intermediate states was compared, revealing a distinct difference in their electron binding energies of 0.4 eV. This finding strongly indicates the nature of the charge injection at the ZnO interface associated with the formation of an interfacial electron-cation complex. It further highlights that the energetic alignment between the dye donor and semiconductor acceptor states appears to be of minor importance for the injection kinetics and that the injection efficiency is dominated by the electronic coupling. PMID:27073060

Light-controlled plasmon switching using hybrid metal-semiconductor nanostructures.

PubMed

Paudel, Hari P; Leuenberger, Michael N

2012-06-13

We present a proof of concept for the dynamic control over the plasmon resonance frequencies in a hybrid metal-semiconductor nanoshell structure with Ag core and TiO(2) coating. Our method relies on the temporary change of the dielectric function ε of TiO(2) achieved through temporarily generated electron-hole pairs by means of a pump laser pulse. This change in ε leads to a blue shift of the Ag surface plasmon frequency. We choose TiO(2) as the environment of the Ag core because the band gap energy of TiO(2) is larger than the Ag surface plasmon energy of our nanoparticles, which allows the surface plasmon being excited without generating electron-hole pairs in the environment at the same time. We calculate the magnitude of the plasmon resonance shift as a function of electron-hole pair density and obtain shifts up to 126 nm at wavelengths around 460 nm. Using our results, we develop the model of a light-controlled surface plasmon polariton switch.

Controlling the spectrum of photons generated on a silicon nanophotonic chip

PubMed Central

Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

2014-01-01

Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor)

2013-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Upconversion-Triggered Charge Separation in Polymer Semiconductors.

PubMed

Jang, Yu Jin; Kim, Eunah; Ahn, Seonghyeon; Chung, Kyungwha; Kim, Jihyeon; Kim, Heejun; Wang, Huan; Lee, Jiseok; Kim, Dong-Wook; Kim, Dong Ha

2017-01-19

Upconversion is a unique optical property that is driven by a sequential photon pumping and generation of higher energy photons in a consecutive manner. The efficiency improvement in photovoltaic devices can be achieved when upconverters are integrated since upconverters contribute to the generation of extra photons. Despite numerous experimental studies confirming the relationship, fundamental explanations for a real contribution of upconversion to photovoltaic efficiency are still in demand. In this respect, we suggest a new approach to visualize the upconversion event in terms of surface photovoltage (SPV) by virtue of Kelvin probe force microscopy (KPFM). One of the most conventional polymer semiconductors, poly(3-hexyl thiophene) (P3HT), is employed as a sensitizer to generate charge carriers by upconverted light. KPFM measurements reveal that the light upconversion enabled the formation of charge carriers in P3HT, resulting in large SPV of -54.9 mV. It confirms that the energy transfer from upconverters to P3HT can positively impact the device performance in organic solar cells (OSCs).

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium.

PubMed

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J; Kraus, Peter M; Cushing, Scott K; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20  cm -3 . Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.; Kraus, Peter M.; Cushing, Scott K.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. PMID:28569752

Simultaneous multichannel wavelength multicasting and XOR logic gate multicasting for three DPSK signals based on four-wave mixing in quantum-dot semiconductor optical amplifier.

PubMed

Qin, Jun; Lu, Guo-Wei; Sakamoto, Takahide; Akahane, Kouichi; Yamamoto, Naokatsu; Wang, Danshi; Wang, Cheng; Wang, Hongxiang; Zhang, Min; Kawanishi, Tetsuya; Ji, Yuefeng

2014-12-01

In this paper, we experimentally demonstrate simultaneous multichannel wavelength multicasting (MWM) and exclusive-OR logic gate multicasting (XOR-LGM) for three 10Gbps non-return-to-zero differential phase-shift-keying (NRZ-DPSK) signals in quantum-dot semiconductor optical amplifier (QD-SOA) by exploiting the four-wave mixing (FWM) process. No additional pump is needed in the scheme. Through the interaction of the input three 10Gbps DPSK signal lights in QD-SOA, each channel is successfully multicasted to three wavelengths (1-to-3 for each), totally 3-to-9 MWM, and at the same time, three-output XOR-LGM is obtained at three different wavelengths. All the new generated channels are with a power penalty less than 1.2dB at a BER of 10(-9). Degenerate and non-degenerate FWM components are fully used in the experiment for data and logic multicasting.

Utilization of parallel processing in solving the inviscid form of the average-passage equation system for multistage turbomachinery

NASA Technical Reports Server (NTRS)

Mulac, Richard A.; Celestina, Mark L.; Adamczyk, John J.; Misegades, Kent P.; Dawson, Jef M.

1987-01-01

A procedure is outlined which utilizes parallel processing to solve the inviscid form of the average-passage equation system for multistage turbomachinery along with a description of its implementation in a FORTRAN computer code, MSTAGE. A scheme to reduce the central memory requirements of the program is also detailed. Both the multitasking and I/O routines referred to are specific to the Cray X-MP line of computers and its associated SSD (Solid-State Disk). Results are presented for a simulation of a two-stage rocket engine fuel pump turbine.

Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey.

PubMed

Chen, Yi Chun; Wu, Ya-Chi; Chie, Wei-Chu

2006-06-21

In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society.

Resonance energy transfer improves the biological function of bacteriorhodopsin within a hybrid material built from purple membranes and semiconductor quantum dots.

PubMed

Rakovich, Aliaksandra; Sukhanova, Alyona; Bouchonville, Nicolas; Lukashev, Evgeniy; Oleinikov, Vladimir; Artemyev, Mikhail; Lesnyak, Vladimir; Gaponik, Nikolai; Molinari, Michael; Troyon, Michel; Rakovich, Yury P; Donegan, John F; Nabiev, Igor

2010-07-14

Purple membrane (PM) from bacteria Halobacterium salinarum contains a photochromic protein bacteriorhodopsin (bR) arranged in a 2D hexagonal nanocrystalline lattice (Figure 1 ). Absorption of light by the protein-bound chromophore retinal results in pumping the protons through the PM creating an electrochemical gradient which is then used by the ATPases to energize the cellular processes. Energy conversion, photochromism, and photoelectrism are the inherent effects which are employed in many bR technical applications. bR, along with the other photosensitive proteins, is not able to deal with the excess energy of photons in UV and blue spectral region and utilizes less than 0.5% of the energy from the available incident solar light for its biological function. Here, we proceed with optimization of bR functions through the engineering of a "nanoconverter" of solar energy based on semiconductor quantum dots (QDs) tagged with the PM. These nanoconverters are able to harvest light from deep-UV to the visible region and to transfer this additionally collected energy to bR via Förster resonance energy transfer (FRET). We show that specific nanobio-optical and spatial coupling of QDs (donor) and bR retinal (acceptor) provide a means to achieve FRET with efficiency approaching 100%. We have finally demonstrated that the integration of QDs within PM significantly increases the efficiency of light-driven transmembrane proton pumping, which is the main bR biological function. This new QD-PM hybrid material will have numerous optoelectronic, photonic, and photovoltaic applications based on its energy conversion, photochromism, and photoelectrism properties.

Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey

PubMed Central

Chen, Yi Chun; Wu, Ya-Chi; Chie, Wei-Chu

2006-01-01

Background In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. Methods This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. Results The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. Conclusion In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society. PMID:16787546

Monolayer semiconductor nanocavity lasers with ultralow thresholds

DOE PAGES

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; ...

2015-03-16

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter 1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC) 6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots 7, extreme difficulty in currentmore » injection8, and lack of compatibility with electronic circuits 7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe 2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers 7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

Polyvinylidene Fluoride Micropore Membranes as Solid-Phase Extraction Disk for Preconcentration of Nanoparticulate Silver in Environmental Waters.

PubMed

Zhou, Xiao-Xia; Lai, Yu-Jian; Liu, Rui; Li, Sha-Sha; Xu, Jing-Wen; Liu, Jing-Fu

2017-12-05

Efficient separation and preconcentration of trace nanoparticulate silver (NAg) from large-volume environmental waters is a prerequisite for reliable analysis and therefore understanding the environmental processes of silver nanoparticles (AgNPs). Herein, we report the novel use of polyvinylidene fluoride (PVDF) filter membrane for disk-based solid phase extraction (SPE) of NAg in 1 L of water samples with the disk-based SPE system, which consists of a syringe pump and a syringe filter holder to embed the filter membrane. While the PVDF membrane can selectively adsorb NAg in the presence of Ag + , aqueous solution of 2% (m/v) FL-70 is found to efficiently elute NAg. Analysis of NAg is performed following optimization of filter membrane and elution conditions with an enrichment factor of 1000. Additionally, transmission electron microscopy (TEM), UV-vis spectroscopy, and size-exclusion chromatography coupled with ICP-MS (SEC-ICP-MS) analysis showed that the extraction gives rise to no change in NAg size or shape, making this method attractive for practical applications. Furthermore, feasibility of the protocol is verified by applying it to extract NAg in four real waters with recoveries of 62.2-80.2% at 0.056-0.58 μg/L spiked levels. This work will facilitate robust studies of trace NAg transformation and their hazard assessments in the environment.

Resonant enhancement of Raman scattering in metamaterials with hybrid electromagnetic and plasmonic resonances

NASA Astrophysics Data System (ADS)

Guddala, Sriram; Narayana Rao, D.; Ramakrishna, S. Anantha

2016-06-01

A tri-layer metamaterial perfect absorber of light, consisting of (Al/ZnS/Al) films with the top aluminum layer patterned as an array of circular disk nanoantennas, is investigated for resonantly enhancing Raman scattering from C60 fullerene molecules deposited on the metamaterial. The metamaterial is designed to have resonant bands due to plasmonic and electromagnetic resonances at the Raman pump frequency (725 nm) as well as Stokes emission bands. The Raman scattering from C60 on the metamaterial with resonantly matched bands is measured to be enhanced by an order of magnitude more than C60 on metamaterials with off-resonant absorption bands peaking at 1090 nm. The Raman pump is significantly enhanced due to the resonance with a propagating surface plasmon band, while the highly impedance-matched electromagnetic resonance is expected to couple out the Raman emission efficiently. The nature and hybridization of the plasmonic and electromagnetic resonances to form compound resonances are investigated by numerical simulations.

Achievement of ultrahigh solar concentration with potential for efficient laser pumping.

PubMed

Gleckman, P

1988-11-01

Measurements are reported of the irradiance produced by a two-stage solar concentrator designed to approach the thermodynamic limit. Sunlight is collected by a 40.6-cm diam parabolic primary which forms a 0.98-cm diam image. The image is reconcentrated by a nonimaging refracting secondary with index n = 1.53 to a final aperture 1.27 mm in diameter. Thus the geometrical concentration ratio is 102, 000. The highest irradiance value achieved was 4.4 +/- 0.2 kW cm(-2), or 56,000 +/- 5000 suns, relative to a solar disk insolation of 800 W m(-2). This is greater than the previous peak solar irradiance record by nearly a factor of 3, and it is 68% of that existing at the solar surface itself. The efficiency with which we concentrated 55 W of sunlight to a small spot suggests that our two-stage system would be an excellent candidate for solar pumping of solid state lasers.

Modular, multi-level groundwater sampler

DOEpatents

Nichols, R.L.; Widdowson, M.A.; Mullinex, H.; Orne, W.H.; Looney, B.B.

1994-03-15

An apparatus is described for taking a multiple of samples of groundwater or pressure measurements from a well simultaneously. The apparatus comprises a series of chambers arranged in an axial array, each of which is dimensioned to fit into a perforated well casing and leave a small gap between the well casing and the exterior of the chamber. Seals at each end of the container define the limits to the axial portion of the well to be sampled. A submersible pump in each chamber pumps the groundwater that passes through the well casing perforations into the gap from the gap to the surface for analysis. The power lines and hoses for the chambers farther down the array pass through each chamber above them in the array. The seals are solid, water-proof, non-reactive, resilient disks supported to engage the inside surface of the well casing. Because of the modular design, the apparatus provides flexibility for use in a variety of well configurations. 3 figures.

Evolution of migrating protoplanets heated by pebble accretion

NASA Astrophysics Data System (ADS)

Chrenko, Ondrej; Broz, Miroslav; Lambrechts, Michiel

2017-10-01

We study the interactions in a protoplanetary system consisting of a gas disk, a pebble disk and embedded low-mass protoplanets. The hydrodynamic simulations are performed using a new code based on 2D FARGO (Masset 2000) which we call FARGO_THORIN (http://sirrah.troja.mff.cuni.cz/~chrenko/). The code treats the hydrodynamics of gas and pebbles within a two-fluid approximation, accounts for the heating and cooling processes in the gaseous component (including heating due to pebble accretion) and propagates the planets in 3D using a high-order integration scheme (IAS15; Rein & Spiegel 2015). Our aim is to investigate how pebble accretion alters the orbital evolution of protoplanets undergoing Type-I migration.First, we demonstrate that pebble accretion can heat the protoplanets so that their luminosity induces the heating torque (Benítez-Llambay et al. 2015) and the hot-trail effect (Chrenko et al. 2017; Eklund & Masset 2017). The heating torque is always positive and alters the migration rates and directions profoundly, thus changing the position of planet traps and deserts. The hot-trail effect, on the other hand, pumps the eccentricity of initially circular orbits up to e ~ h. After becoming eccentric, the protoplanets exhibit reduced probability of resonant locking during the migration and moreover, their close encounters become more frequent and provide more opportunities for scattering or merger events. The mergers can be massive enough to become giant planet cores. We discuss the importance of the excited eccentricities and violent orbital evolution for the extrasolar planet population synthesis. Finally, we present an extended model with flux-mean opacities caused by a coupled disk of coagulating dust grains with a realistic size distribution. The aim of this model is to constrain possible pathways of migrating planets towards the inner rim of the protoplanetary disk.

Two-stage concentrating systems for pumping of solar lasers

NASA Astrophysics Data System (ADS)

Klichev, Sh.; Bakhramov, S.; Abdurakhmanov, A.; Fazilov, A.; Payziyev, Sh.; Ismanjanov, A.; Bokoev, K.; Dudko, J.; Klichev, Z.

2008-02-01

One of the ways to increase the concentrating ability of solar concentrators used for pumping of lasers is an additional concentration of a sunlight by a secondary concentrator allocated in a focal area of the primary concentrator. Limiting concentrations of those compound systems on the basis of non-imaging optics have been received by Winston. However more detailed calculations on the basis of irradiance integral are necessary for designing and practical realization of such systems. It is especially important for the systems including generally compound of two secondary concentrators. The full design procedure for concentration by systems of type compound parabolic concentrator or Winston concentrator (focon) and a cone concentrator is developed in the work in view of real distribution of brightness on a solar disk and discrepancies of primary concentrator geometry. The generalized dependences of efficiency of compound systems for the maximal and mean concentration in a focal plane of the primary paraboloidal concentrator depending on its disclosing angle U 0 and discrepancies of geometry are received. It is shown, that focon only up to U 0 < 30° is more effective, than the cone and further their efficiencies are identical. It is shown, that secondary concentrator allows to increase the pumping efficiency not less, than 30%.

CO2 infrared emission as a diagnostic of planet-forming regions of disks

NASA Astrophysics Data System (ADS)

Bosman, Arthur D.; Bruderer, Simon; van Dishoeck, Ewine F.

2017-05-01

Context. The infrared ro-vibrational emission lines from organic molecules in the inner regions of protoplanetary disks are unique probes of the physical and chemical structure of planet-forming regions and the processes that shape them. These observed lines are mostly interpreted with local thermal equilibrium (LTE) slab models at a single temperature. Aims: We aim to study the non-LTE excitation effects of carbon dioxide (CO2) in a full disk model to evaluate: (I) what the emitting regions of the different CO2 ro-vibrational bands are; (II) how the CO2 abundance can be best traced using CO2 ro-vibrational lines using future JWST data and; (III) what the excitation and abundances tell us about the inner disk physics and chemistry. CO2 is a major ice component and its abundance can potentially test models with migrating icy pebbles across the iceline. Methods: A full non-LTE CO2 excitation model has been built starting from experimental and theoretical molecular data. The characteristics of the model are tested using non-LTE slab models. Subsequently the CO2 line formation was modelled using a two-dimensional disk model representative of T Tauri disks where CO2 is detected in the mid-infrared by the Spitzer Space Telescope. Results: The CO2 gas that emits in the 15 μm and 4.5 μm regions of the spectrum is not in LTE and arises in the upper layers of disks, pumped by infrared radiation. The v2 15 μm feature is dominated by optically thick emission for most of the models that fit the observations and increases linearly with source luminosity. Its narrowness compared with that of other molecules stems from a combination of the low rotational excitation temperature ( 250 K) and the inherently narrower feature for CO2. The inferred CO2 abundances derived for observed disks range from 3 × 10-9 to 1 × 10-7 with respect to total gas density for typical gas/dust ratios of 1000, similar to earlier LTE disk estimates. Line-to-continuum ratios are low, in the order of a few percent, stressing the need for high signal-to-noise (S/N > 300) observations for individual line detections. Conclusions: The inferred CO2 abundances are much lower than those found in interstellar ices ( 10-5), indicating a reset of the chemistry by high temperature reactions in the inner disk. JWST-MIRI with its higher spectral resolving power will allow a much more accurate retrieval of abundances from individual P- and R-branch lines, together with the 13CO2Q-branch at 15 μm. The 13CO2Q-branch is particularly sensitive to possible enhancements of CO2 due to sublimation of migrating icy pebbles at the iceline(s). Prospects for JWST-NIRSpec are discussed as well.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

High-k shallow traps observed by charge pumping with varying discharging times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are inmore » fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.« less