Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

SiGe BiCMOS manufacturing platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

RF-MEMS tunable interdigitated capacitor and fixed spiral inductor for band pass filter applications

NASA Astrophysics Data System (ADS)

Bade, Ladon Ahmed; Dennis, John Ojur; Khir, M. Haris Md; Wen, Wong Peng

2016-11-01

This research presents the tunable Radio Frequency Micro Electromechanical Systems (RF-MEMS) coupled band-pass filter (BPF), which possess a wide tuning range and constructed by using the Chebyshev fourth degree equivalent circuit consisting of fixed inductors and interdigitated tunable capacitors. The suggested method was authenticated by designing a new tunable BPF with a 100% tuning range from 3.1 GHz to 4.9 GHz. The Metal Multi-User MEMS Process (Metal MUMPs) was involved in the process of design of this band-pass filter. It aimed to achieve the reconfiguration of frequencies and show high efficiency of RF in the applications that using Ultra Wide Band (UWB) such as wireless sensor networks. The RF performance of this filter was found to be very satisfactory due to its simple fabrication. Moreover, it showed less insertion loss of around 4 dB and high return loss of around 20 dB.

Mechanically coupled CMOS-MEMS free-free beam resonator arrays with enhanced power handling capability.

PubMed

Li, Ming-Huang; Chen, Wen-Chien; Li, Sheng-Shian

2012-03-01

Integrated CMOS-MEMS free-free beam resonator arrays operated in a standard two-port electrical configuration with low motional impedance and high power handling capability, centered at 10.5 MHz, have been demonstrated using the combination of pull-in gap reduction mechanism and mechanically coupled array design. The mechanical links (i.e., coupling elements) using short stubs connect each constituent resonator of an array to its adjacent ones at the high-velocity vibrating locations to accentuate the desired mode and reject all other spurious modes. A single second-mode free-free beam resonator with quality factor Q > 2200 and motional impedance R(m) < 150 kΩ has been used to achieve mechanically coupled resonator arrays in this work. In array design, a 9-resonator array has been experimentally characterized to have performance improvement of approximately 10× on motional impedance and power handling as compared with that of a single resonator. In addition, the two-port electrical configuration is much preferred over a one-port configuration because of its low-feedthrough and high design flexibility for future oscillator and filter implementation.

Respiration detection chip with integrated temperature-insensitive MEMS sensors and CMOS signal processing circuits.

PubMed

Wei, Chia-Ling; Lin, Yu-Chen; Chen, Tse-An; Lin, Ren-Yi; Liu, Tin-Hao

2015-02-01

An airflow sensing chip, which integrates MEMS sensors with their CMOS signal processing circuits into a single chip, is proposed for respiration detection. Three micro-cantilever-based airflow sensors were designed and fabricated using a 0.35 μm CMOS/MEMS 2P4M mixed-signal polycide process. Two main differences were present among these three designs: they were either metal-covered or metal-free structures, and had either bridge-type or fixed-type reference resistors. The performances of these sensors were measured and compared, including temperature sensitivity and airflow sensitivity. Based on the measured results, the metal-free structure with fixed-type reference resistors is recommended for use, because it has the highest airflow sensitivity and also can effectively reduce the output voltage drift caused by temperature change.

CMOS chip planarization by chemical mechanical polishing for a vertically stacked metal MEMS integration

NASA Astrophysics Data System (ADS)

Lee, Hocheol; Miller, Michele H.; Bifano, Thomas G.

2004-01-01

In this paper we present the planarization process of a CMOS chip for the integration of a microelectromechanical systems (MEMS) metal mirror array. The CMOS chip, which comes from a commercial foundry, has a bumpy passivation layer due to an underlying aluminum interconnect pattern (1.8 µm high), which is used for addressing individual micromirror array elements. To overcome the tendency for tilt error in the CMOS chip planarization, the approach is to sputter a thick layer of silicon nitride at low temperature and to surround the CMOS chip with dummy silicon pieces that define a polishing plane. The dummy pieces are first lapped down to the height of the CMOS chip, and then all pieces are polished. This process produced a chip surface with a root-mean-square flatness error of less than 100 nm, including tilt and curvature errors.

Ka-Band, RF MEMS Switches on CMOS Grade Silicon with a Polyimide Interface Layer

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Varaljay, Nicholas C.; Papapolymerou, John

2003-01-01

For the first time, RF MEMS switcbes on CMOS grade Si witb a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.

Design and analysis of a high Q MEMS passive RF filter

NASA Astrophysics Data System (ADS)

Rathee, Vishal; Pande, Rajesh

2016-04-01

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver system. This is due to some excellent properties of the MEMS devices like low loss, low cost and excellent isolation. This paper presents a design of high performance MEMS passive band pass filter, consisting of L and C with improved quality factor and insertion loss less than the reported filters. In this paper we have presented a design of 2nd order band pass filter with 2.4GHz centre frequency and 83MHz bandwidth for Bluetooth application. The simulation results showed improved Q-factor of 34 and Insertion loss of 1.7dB to 1.9dB. The simulation results needs to be validated by fabricating the device, fabrication flow of which is also presented in the paper.

Manufacture of Micromirror Arrays Using a CMOS-MEMS Technique.

PubMed

Kao, Pin-Hsu; Dai, Ching-Liang; Hsu, Cheng-Chih; Wu, Chyan-Chyi

2009-01-01

In this study we used the commercial 0.35 μm CMOS (complementary metal oxide semiconductor) process and simple maskless post-processing to fabricate an array of micromirrors exhibiting high natural frequency. The micromirrors were manufactured from aluminum; the sacrificial layer was silicon dioxide. Because we fabricated the micromirror arrays using the standard CMOS process, they have the potential to be integrated with circuitry on a chip. For post-processing we used an etchant to remove the sacrificial layer and thereby suspend the micromirrors. The micromirror array contained a circular membrane and four fixed beams set symmetrically around and below the circular mirror; these four fan-shaped electrodes controlled the tilting of the micromirror. A MEMS (microelectromechanical system) motion analysis system and a confocal 3D-surface topography were used to characterize the properties and configuration of the micromirror array. Each micromirror could be rotated in four independent directions. Experimentally, we found that the micromirror had a tilting angle of about 2.55° when applying a driving voltage of 40 V. The natural frequency of the micromirrors was 59.1 kHz.

Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor

NASA Astrophysics Data System (ADS)

Chang, Chun-I.; Tsai, Ming-Han; Liu, Yu-Chia; Sun, Chih-Ming; Fang, Weileun

2013-09-01

This study exploits the foundry available complimentary metal-oxide-semiconductor (CMOS) process and the packaging house available pick-and-place technology to implement a capacitive type micromachined 2-axis tilt sensor. The suspended micro mechanical structures such as the spring, stage and sensing electrodes are fabricated using the CMOS microelectromechanical systems (MEMS) processes. A bulk block is assembled onto the suspended stage by pick-and-place technology to increase the proof-mass of the tilt sensor. The low temperature UV-glue dispensing and curing processes are employed to bond the block onto the stage. Thus, the sensitivity of the CMOS MEMS capacitive type 2-axis tilt sensor is significantly improved. In application, this study successfully demonstrates the bonding of a bulk solder ball of 100 µm in diameter with a 2-axis tilt sensor fabricated using the standard TSMC 0.35 µm 2P4M CMOS process. Measurements show the sensitivities of the 2-axis tilt sensor are increased for 2.06-fold (x-axis) and 1.78-fold (y-axis) after adding the solder ball. Note that the sensitivity can be further improved by reducing the parasitic capacitance and the mismatch of sensing electrodes caused by the solder ball.

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Lebrasseur, Eric; Okamoto, Yuki; Marty, Frédéfic; Setoguchi, Ryota; Yamada, Kentaro; Mori, Isao; Morishita, Satoshi; Imai, Yoshiaki; Hosaka, Kota; Hirakawa, Atsushi; Inoue, Shu; Kubota, Masanori; Denoual, Matthieu

2017-06-01

Since the 2000s, several countries have established micro- and nanofabrication platforms for the research and education community as national projects. By combining such platforms with VLSI multichip foundry services, various integrated devices, referred to as “CMOS-MEMS”, can be realized without constructing an entire cleanroom. In this paper, we summarize MEMS-last postprocess schemes for CMOS devices on a bulk silicon wafer as well as on a silicon-on-insulator (SOI) wafer using an open-access cleanroom of the Nanotechnology Platform of MEXT Japan. The integration devices presented in this article are free-standing structures and postprocess isolated LSI devices. Postprocess issues are identified with their solutions, such as the reactive ion etching (RIE) lag for dry release and the impact of the deep RIE (DRIE) postprocess on transistor characteristics. Integration with nonsilicon materials is proposed as one of the future directions.

Manufacture of Micromirror Arrays Using a CMOS-MEMS Technique

PubMed Central

Kao, Pin-Hsu; Dai, Ching-Liang; Hsu, Cheng-Chih; Wu, Chyan-Chyi

2009-01-01

In this study we used the commercial 0.35 μm CMOS (complementary metal oxide semiconductor) process and simple maskless post-processing to fabricate an array of micromirrors exhibiting high natural frequency. The micromirrors were manufactured from aluminum; the sacrificial layer was silicon dioxide. Because we fabricated the micromirror arrays using the standard CMOS process, they have the potential to be integrated with circuitry on a chip. For post-processing we used an etchant to remove the sacrificial layer and thereby suspend the micromirrors. The micromirror array contained a circular membrane and four fixed beams set symmetrically around and below the circular mirror; these four fan-shaped electrodes controlled the tilting of the micromirror. A MEMS (microelectromechanical system) motion analysis system and a confocal 3D-surface topography were used to characterize the properties and configuration of the micromirror array. Each micromirror could be rotated in four independent directions. Experimentally, we found that the micromirror had a tilting angle of about 2.55° when applying a driving voltage of 40 V. The natural frequency of the micromirrors was 59.1 kHz. PMID:22454581

Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

NASA Astrophysics Data System (ADS)

Jang, Min-Woo

Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600

Optical Characterization of Lorentz Force Based CMOS-MEMS Magnetic Field Sensor

PubMed Central

Dennis, John Ojur; Ahmad, Farooq; Khir, M. Haris Bin Md; Hamid, Nor Hisham Bin

2015-01-01

Magnetic field sensors are becoming an essential part of everyday life due to the improvements in their sensitivities and resolutions, while at the same time they have become compact, smaller in size and economical. In the work presented herein a Lorentz force based CMOS-MEMS magnetic field sensor is designed, fabricated and optically characterized. The sensor is fabricated by using CMOS thin layers and dry post micromachining is used to release the device structure and finally the sensor chip is packaged in DIP. The sensor consists of a shuttle which is designed to resonate in the lateral direction (first mode of resonance). In the presence of an external magnetic field, the Lorentz force actuates the shuttle in the lateral direction and the amplitude of resonance is measured using an optical method. The differential change in the amplitude of the resonating shuttle shows the strength of the external magnetic field. The resonance frequency of the shuttle is determined to be 8164 Hz experimentally and from the resonance curve, the quality factor and damping ratio are obtained. In an open environment, the quality factor and damping ratio are found to be 51.34 and 0.00973 respectively. The sensitivity of the sensor is determined in static mode to be 0.034 µm/mT when a current of 10 mA passes through the shuttle, while it is found to be higher at resonance with a value of 1.35 µm/mT at 8 mA current. Finally, the resolution of the sensor is found to be 370.37 µT. PMID:26225972

Optical Characterization of Lorentz Force Based CMOS-MEMS Magnetic Field Sensor.

PubMed

Dennis, John Ojur; Ahmad, Farooq; Khir, M Haris Bin Md; Bin Hamid, Nor Hisham

2015-07-27

Magnetic field sensors are becoming an essential part of everyday life due to the improvements in their sensitivities and resolutions, while at the same time they have become compact, smaller in size and economical. In the work presented herein a Lorentz force based CMOS-MEMS magnetic field sensor is designed, fabricated and optically characterized. The sensor is fabricated by using CMOS thin layers and dry post micromachining is used to release the device structure and finally the sensor chip is packaged in DIP. The sensor consists of a shuttle which is designed to resonate in the lateral direction (first mode of resonance). In the presence of an external magnetic field, the Lorentz force actuates the shuttle in the lateral direction and the amplitude of resonance is measured using an optical method. The differential change in the amplitude of the resonating shuttle shows the strength of the external magnetic field. The resonance frequency of the shuttle is determined to be 8164 Hz experimentally and from the resonance curve, the quality factor and damping ratio are obtained. In an open environment, the quality factor and damping ratio are found to be 51.34 and 0.00973 respectively. The sensitivity of the sensor is determined in static mode to be 0.034 µm/mT when a current of 10 mA passes through the shuttle, while it is found to be higher at resonance with a value of 1.35 µm/mT at 8 mA current. Finally, the resolution of the sensor is found to be 370.37 µT.

RF-MEMS Load Sensors with Enhanced Q-factor and Sensitivity in a Suspended Architecture.

PubMed

Melik, Rohat; Unal, Emre; Perkgoz, Nihan Kosku; Puttlitz, Christian; Demir, Hilmi Volkan

2011-03-01

In this paper, we present and demonstrate RF-MEMS load sensors designed and fabricated in a suspended architecture that increases their quality-factor (Q-factor), accompanied with an increased resonance frequency shift under load. The suspended architecture is obtained by removing silicon under the sensor. We compare two sensors that consist of 195 μm × 195 μm resonators, where all of the resonator features are of equal dimensions, but one's substrate is partially removed (suspended architecture) and the other's is not (planar architecture). The single suspended device has a resonance of 15.18 GHz with 102.06 Q-factor whereas the single planar device has the resonance at 15.01 GHz and an associated Q-factor of 93.81. For the single planar device, we measured a resonance frequency shift of 430 MHz with 3920 N of applied load, while we achieved a 780 MHz frequency shift in the single suspended device. In the planar triplet configuration (with three devices placed side by side on the same chip, with the two outmost ones serving as the receiver and the transmitter), we observed a 220 MHz frequency shift with 3920 N of applied load while we obtained a 340 MHz frequency shift in the suspended triplet device with 3920 N load applied. Thus, the single planar device exhibited a sensitivity level of 0.1097 MHz/N while the single suspended device led to an improved sensitivity of 0.1990 MHz/N. Similarly, with the planar triplet device having a sensitivity of 0.0561 MHz/N, the suspended triplet device yielded an enhanced sensitivity of 0.0867 MHz/N.

System-in Package of Integrated Humidity Sensor Using CMOS-MEMS Technology.

PubMed

Lee, Sung Pil

2015-10-01

Temperature/humidity microchips with micropump were fabricated using a CMOS-MEMS process and combined with ZigBee modules to implement a sensor system in package (SIP) for a ubiquitous sensor network (USN) and/or a wireless communication system. The current of a diode temperature sensor to temperature and a normalized current of FET humidity sensor to relative humidity showed linear characteristics, respectively, and the use of the micropump has enabled a faster response. A wireless reception module using the same protocol as that in transmission systems processed the received data within 10 m and showed temperature and humidity values in the display.

Implementation of the CMOS MEMS Condenser Microphone with Corrugated Metal Diaphragm and Silicon Back-Plate

PubMed Central

Huang, Chien-Hsin; Lee, Chien-Hsing; Hsieh, Tsung-Min; Tsao, Li-Chi; Wu, Shaoyi; Liou, Jhyy-Cheng; Wang, Ming-Yi; Chen, Li-Che; Yip, Ming-Chuen; Fang, Weileun

2011-01-01

This study reports a CMOS-MEMS condenser microphone implemented using the standard thin film stacking of 0.35 μm UMC CMOS 3.3/5.0 V logic process, and followed by post-CMOS micromachining steps without introducing any special materials. The corrugated diaphragm for the microphone is designed and implemented using the metal layer to reduce the influence of thin film residual stresses. Moreover, a silicon substrate is employed to increase the stiffness of the back-plate. Measurements show the sensitivity of microphone is −42 ± 3 dBV/Pa at 1 kHz (the reference sound-level is 94 dB) under 6 V pumping voltage, the frequency response is 100 Hz–10 kHz, and the S/N ratio >55 dB. It also has low power consumption of less than 200 μA, and low distortion of less than 1% (referred to 100 dB). PMID:22163953

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique.

PubMed

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-10-23

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

PubMed Central

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-01-01

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm. PMID:26512671

Mechanical characterization of poly-SiGe layers for CMOS-MEMS integrated application

NASA Astrophysics Data System (ADS)

Modlinski, Robert; Witvrouw, Ann; Verbist, Agnes; Puers, Robert; De Wolf, Ingrid

2010-01-01

Measuring mechanical properties at the microscale is essential to understand and to fabricate reliable MEMS. In this paper a tensile testing system and matching microscale test samples are presented. The test samples have a dog-bone-like structure. They are designed to mimic standard macro-tensile test samples. The micro-tensile tests are used to characterize 0.9 µm thick polycrystalline silicon germanium (poly-SiGe) films. The poly-SiGe film, that can be considered as a close equivalent to polycrystalline silicon (poly-Si), is studied as a very promising material for use in CMOS/MEMS integration in a single chip due to its low-temperature LPCVD deposition (T < 450 °C). The fabrication process of the poly-SiGe micro-tensile test structure is explained in detail: the design, the processing and post-processing, the testing and finally the results' discussion. The poly-SiGe micro-tensile results are also compared with nanoindentation data obtained on the same poly-SiGe films as well as with results obtained by other research groups.

Integrated on-chip inductors with electroplated magnetic yokes (invited)

NASA Astrophysics Data System (ADS)

Wang, Naigang; O'Sullivan, Eugene J.; Herget, Philipp; Rajendran, Bipin; Krupp, Leslie E.; Romankiw, Lubomyr T.; Webb, Bucknell C.; Fontana, Robert; Duch, Elizabeth A.; Joseph, Eric A.; Brown, Stephen L.; Hu, Xiaolin; Decad, Gary M.; Sturcken, Noah; Shepard, Kenneth L.; Gallagher, William J.

2012-04-01

Thin-film ferromagnetic inductors show great potential as the energy storage element for integrated circuits containing on-chip power management. In order to achieve the high energy storage required for power management, on-chip inductors require relatively thick magnetic yoke materials (several microns or more), which can be readily deposited by electroplating through a photoresist mask as demonstrated in this paper, the yoke material of choice being Ni45Fe55, whose properties of relatively high moment and electrical resistivity make it an attractive model yoke material for inductors. Inductors were designed with a variety of yoke geometries, and included both single-turn and multi-turn coil designs, which were fabricated on 200 mm silicon wafers in a CMOS back-end-of-line (BEOL) facility. Each inductor consisted of electroplated copper coils enclosed by the electroplated Ni45Fe55 yokes; aspects of the fabrication of the inductors are discussed. Magnetic properties of the electroplated yoke materials are described, including high frequency permeability measurements. The inductance of 2-turn coil inductors, for example, was enhanced up to about 6 times over the air core equivalent, with an inductance density of 130 nH/mm2 being achieved. The resistance of these non-laminated inductors was relatively large at high frequency due to magnetic and eddy current losses but is expected to improve as the yoke material/structure is further optimized, making electroplated yoke-containing inductors attractive for dc-dc power converters.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

PubMed

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-11-04

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

Mask-less deposition of Au-SnO2 nanocomposites on CMOS MEMS platform for ethanol detection.

PubMed

Santra, S; Sinha, A K; De Luca, A; Ali, S Z; Udrea, F; Guha, P K; Ray, S K; Gardner, J W

2016-03-29

Here we report on the mask-less deposition of Au-SnO2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au-SnO2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then 'written' directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100-1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm(-1) for 100-1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene.

Mask-less deposition of Au-SnO2 nanocomposites on CMOS MEMS platform for ethanol detection

NASA Astrophysics Data System (ADS)

Santra, S.; Sinha, A. K.; De Luca, A.; Ali, S. Z.; Udrea, F.; Guha, P. K.; Ray, S. K.; Gardner, J. W.

2016-03-01

Here we report on the mask-less deposition of Au-SnO2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au-SnO2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then ‘written’ directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100-1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm-1 for 100-1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene.

Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumant, A.V.; Auciello, O.; Yuan, H.-C

2009-05-01

Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materialsmore » integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.« less

RF Telemetry System for an Implantable Bio-MEMS Sensor

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Hall, David G.; Miranda, Felix A.

2004-01-01

In this paper, a novel miniature inductor and a pick-up antenna for contact less powering and RF telemetry from implantable bio-MEMS sensors are presented. The design of the inductor and the pick-up antenna are discussed. In addition, the measured characteristics at the design frequency of 330 MHz have been shown.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

PubMed Central

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-01-01

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

MEMS Reliability Assurance Activities at JPL

NASA Technical Reports Server (NTRS)

Kayali, S.; Lawton, R.; Stark, B.

2000-01-01

An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE PAGES

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...

2017-03-27

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

Improved L-C resonant decay technique for Q measurement of quasilinear power inductors: New results for MPP and ferrite powdered cores

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Gerber, Scott S.

1995-01-01

The L-C resonant decay technique for measuring circuit Q or losses is improved by eliminating the switch from the inductor-capacitor loop. A MOSFET switch is used instead to momentarily connect the resonant circuit to an existing voltage source, which itself is gated off during the decay transient. Very reproducible, low duty cycle data could be taken this way over a dynamic voltage range of at least 10:1. Circuit Q is computed from a polynomial fit to the sequence of the decaying voltage maxima. This method was applied to measure the losses at 60 kHz in inductors having loose powder cores of moly permalloy and an Mn-Zn power ferrite. After the copper and capacitor losses are separated out, the resulting specific core loss is shown to be roughly as expected for the MPP powder, but anomalously high for the ferrite powder. Possible causes are mentioned.

Design, Simulation and Fabrication of A MEMS-based Double-layer Spiral Planar Inductor with Patterned Permalloy as Magnetic Layers

NASA Astrophysics Data System (ADS)

Zhu, Xiaomin; Cheng, Ping; Chen, Mingming; Ding, Guifu

2018-03-01

There have been significant efforts to boost the inductance value by adopting the sandwich structures using permalloy magnetic shielding layers. However, this structure will introduce high ac conductor losses and high eddy currents. In order to solve these problems, patterned permalloy can solve this problem effectively. According to the simulation results based on the application of finite element method in the frequency domain, the optimum permalloy pattern is which the blank of the permalloy are perpendicular to the coil inside. The double-layer planar inductor has a size of l5×1.5×0.1mm consisted of 13-turn spiral Cu coil for each layer and a 20μm-thick patterned permalloy magnetic shielding layer. The inductor shows a higher inductance than the traditional planar inductor. The patterned permalloy made the inductor more stable in high frequency than the none-patterned. And the inductor has an inductance of 1.3μH and quality factor of 2.8 at 1.5MHz, with an inductance per unit of 578nH/mm2, which is much higher than that in the reported literatures.

CMOS based capacitance to digital converter circuit for MEMS sensor

NASA Astrophysics Data System (ADS)

Rotake, D. R.; Darji, A. D.

2018-02-01

Most of the MEMS cantilever based system required costly instruments for characterization, processing and also has large experimental setups which led to non-portable device. So there is a need of low cost, highly sensitive, high speed and portable digital system. The proposed Capacitance to Digital Converter (CDC) interfacing circuit converts capacitance to digital domain which can be easily processed. Recent demand microcantilever deflection is part per trillion ranges which change the capacitance in 1-10 femto farad (fF) range. The entire CDC circuit is designed using CMOS 250nm technology. Design of CDC circuit consists of a D-latch and two oscillators, namely Sensor controlled oscillator (SCO) and digitally controlled oscillator (DCO). The D-latch is designed using transmission gate based MUX for power optimization. A CDC design of 7-stage, 9-stage and 11-stage tested for 1-18 fF and simulated using mentor graphics Eldo tool with parasitic. Since the proposed design does not use resistance component, the total power dissipation is reduced to 2.3621 mW for CDC designed using 9-stage SCO and DCO.

Ethanol Microsensors with a Readout Circuit Manufactured Using the CMOS-MEMS Technique

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-01

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro-mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm. PMID:25594598

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-14

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm.

Bubble inductors: Pneumatic tuning of a stretchable inductor

NASA Astrophysics Data System (ADS)

Lazarus, Nathan; Bedair, Sarah S.

2018-05-01

From adaptive matching networks in power systems to channel selectable RF filters and circuitry, tunable inductors are fundamental components for circuits requiring reconfigurability. Here we demonstrate a new continuously tunable inductor based on physically stretching the inductor traces themselves. Liquid-metal-based stretchable conductors are wrapped around a pneumatic bubble actuator, allowing the inductor to be collapsed or expanded by application of pressure. In vacuum the bubble collapses, bringing the loop area to nearly zero, while positive pressure brings a dramatic increase in area and loop inductance. Using this approach, the inductor demonstrated in this work was able to achieve a tuning ratio of 2.6 with 1-2 second response time. With conductors available that can stretch by hundreds of percent, this technique is promising for very large tuning ratios in continuously tunable inductors.

A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

PubMed

Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

2016-03-03

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz.

High frequency transformers and high Q factor inductors formed using epoxy-based magnetic polymer materials

DOEpatents

Sanchez, Robert O.; Gunewardena, Shelton; Masi, James V.

2007-11-27

An electrical component in the form of an inductor or transformer is disclosed which includes one or more coils and a magnetic polymer material located near the coils or supporting the coils to provide an electromagnetic interaction therewith. The magnetic polymer material is preferably a cured magnetic epoxy which includes a mercaptan derivative having a ferromagnetic atom chemically bonded therein. The ferromagnetic atom can be either a transition metal or rare-earth atom.

High frequency transformers and high Q factor inductors formed using epoxy-based magnetic polymer materials

DOEpatents

Sanchez, Robert O.; Gunewardena, Shelton; Masi, James V.

2005-03-29

An electrical component in the form of an inductor or transformer is disclosed which includes one or more coils and a magnetic polymer material located near the coils or supporting the coils to provide an electromagnetic interaction therewith. The magnetic polymer material is preferably a cured magnetic epoxy which includes a mercaptan derivative having a ferromagnetic atom chemically bonded therein. The ferromagnetic atom can be either a transition metal or rare-earth atom.

An inductor-based converter with EMI reduction for low-voltage thermoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Wang, Chuang; Zhao, Kai; Li, Zunchao

2017-07-01

This paper presents a self-powered inductor-based converter which harvests thermoelectric energy and boosts extremely low voltage to a typical voltage level for supplying body sensor nodes. Electromagnetic interference (EMI) of the converter is reduced by spreading spectrum of fundamental frequency and harmonics via pseudo-random modulation, which is obtained via combining the linear feedback shift register and digitally controlled oscillator. Besides, the methods, namely extracting energy near MPP and reducing the power dissipation, are employed to improve the power efficiency. The presented inductor-based converter is designed and verified in CSMC CMOS 0.18-µm 1P6M process. The results reveal that it achieves the high efficiency and EMI reduction at the same time.

Design and simulation of multi-color infrared CMOS metamaterial absorbers

NASA Astrophysics Data System (ADS)

Cheng, Zhengxi; Chen, Yongping; Ma, Bin

2016-05-01

Metamaterial electromagnetic wave absorbers, which usually can be fabricated in a low weight thin film structure, have a near unity absorptivity in a special waveband, and therefore have been widely applied from microwave to optical waveband. To increase absorptance of CMOS MEMS devices in 2-5 μmm waveband, multi-color infrared metamaterial absorbers are designed with CSMC 0.5 μmm 2P3M and 0.18 μmm 1P6M CMOS technology in this work. Metal-insulator-metal (MIM) three-layer MMAs and Insulator-metal-insulator-metal (MIMI) four-layer MMAs are formed by CMOS metal interconnect layers and inter metal dielectrics layer. To broaden absorption waveband in 2-5μmm range, MMAs with a combination of different sizes cross bars are designed. The top metal layer is a periodic aluminum square array or cross bar array with width ranging from submicron to several microns. The absorption peak position and intensity of MMAs can be tuned by adjusting the top aluminum micro structure array. Post-CMOS process is adopted to fabricate MMAs. The infrared absorption spectra of MMAs are verified with finite element method simulation, and the effects of top metal structure sizes, patterns, and films thickness are also simulated and intensively discussed. The simulation results show that CMOS MEMS MMAs enhance infrared absorption in 2-20 μmm. The MIM broad MMA has an average absorptance of 0.22 in 2-5 μmm waveband, and 0.76 in 8-14 μm waveband. The CMOS metamaterial absorbers can be inherently integrated in many kinds of MEMS devices fabricated with CMOS technology, such as uncooled bolometers, infrared thermal emitters.

Skin effect suppression for Cu/CoZrNb multilayered inductor

NASA Astrophysics Data System (ADS)

Sato, Noriyuki; Endo, Yasushi; Yamaguchi, Masahiro

2012-04-01

The Cu/Co85Zr3Nb12 multilayer is studied as a conductor of a spiral inductor to suppress the skin effect at the 5 GHz range (matches IEEE 802.11 a standard) using negative-permeability in CoZrNb films beyond the ferromagnetic resonance frequency. The skin effect suppression becomes remarkable when the thickness of Cu in each period of the multilayer, tCu, is less than the skin depth of Cu at the targeting frequency. For the 5 GHz operation, tCu ≤ 750 nm. The resistance of the Cu/CoZrNb multilayered spiral inductor decreases as much as 8.7%, while keeping the same inductance of 1.1 nH as that of a similar air core. Accordingly, Q = 16. Therefore, the proposed method can contribute to realize a high-Q spiral inductor. We also study the potentially applicable frequency of this method. Given a soft magnetic material with Ms = 105 emu/cc and Hk = 5 Oe, the method can be applied at 700 MHz, the lowermost carrier frequency band for the 4th generation cellular phone system.

Characterization of embroidered inductors

NASA Astrophysics Data System (ADS)

Roh, Jung-Sim; Chi, Yong-Seung; Lee, Jae-Hee; Nam, Sangwook; Kang, Tae Jin

2010-11-01

As the demand for wearable intelligent textile systems continues to expand, it is now essential to achieve a high-level of electronic circuit integration into textiles. By applying a commercial yarn manufacturing technique and a computer numerical control (CNC) embroidery process, metal composite embroidery yarns (MCEYs) comprised of three strands of fine metal filaments and polyester filaments, and embroidered circuits have been successfully produced. Using MCEYs, circular and square spiral inductors were embroidered on a textile substrate. Their inductive characteristics, i.e. inductance, self-resonance frequency, and quality factor, were investigated under three different environments, i.e. in free space, on a human body, and with a metal fabric ground. Their inductive characteristics could be easily modified by adjusting the circuit design. The validity of the MCEY inductors was demonstrated with Wheeler's formula and design equations for the MCEY inductors were proposed. When in contact with the human body, the self-resonance frequency of the circuit decreased but the inductance was not affected. Although the inductance and maximum quality factor decreased with a metal ground, the inductor gave a stable performance irrespective of the environment. The results also suggest that MCEY embroidery is a simple and eco-friendly process for producing flexible, light-weight, wearable circuitries in various designs.

Spacecraft transformer and inductor design

NASA Technical Reports Server (NTRS)

Mclyman, W. T.

1977-01-01

The conversion process in spacecraft power electronics requires the use of magnetic components which frequently are the heaviest and bulkiest items in the conversion circuit. This handbook pertains to magnetic material selection, transformer and inductor design tradeoffs, transformer design, iron core dc inductor design, toroidal power core inductor design, window utilization factors, regulation, and temperature rise. Relationships are given which simplify and standardize the design of transformers and the analysis of the circuits in which they are used. The interactions of the various design parameters are also presented in simplified form so that tradeoffs and optimizations may easily be made.

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

DOEpatents

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

2013-01-15

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Quantitative optical metrology with CMOS cameras

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Kolenovic, Ervin; Ferguson, Curtis F.

2004-08-01

Recent advances in laser technology, optical sensing, and computer processing of data, have lead to the development of advanced quantitative optical metrology techniques for high accuracy measurements of absolute shapes and deformations of objects. These techniques provide noninvasive, remote, and full field of view information about the objects of interest. The information obtained relates to changes in shape and/or size of the objects, characterizes anomalies, and provides tools to enhance fabrication processes. Factors that influence selection and applicability of an optical technique include the required sensitivity, accuracy, and precision that are necessary for a particular application. In this paper, sensitivity, accuracy, and precision characteristics in quantitative optical metrology techniques, and specifically in optoelectronic holography (OEH) based on CMOS cameras, are discussed. Sensitivity, accuracy, and precision are investigated with the aid of National Institute of Standards and Technology (NIST) traceable gauges, demonstrating the applicability of CMOS cameras in quantitative optical metrology techniques. It is shown that the advanced nature of CMOS technology can be applied to challenging engineering applications, including the study of rapidly evolving phenomena occurring in MEMS and micromechatronics.

Nanogranular soft magnetic material and on-package integrated inductors

NASA Astrophysics Data System (ADS)

Li, Liangliang

2007-12-01

Integrated inductors used in electronic circuits are mainly spiral-shaped aluminum devices fabricated on Si chip. They have several disadvantages---large silicon area consumption, high DC resistance and high cost. An attractive approach to address these issues is directly integrating inductors into package substrates, which provide plenty of usage area, low resistance and low cost. The goals of this dissertation are designing and fabricating magnetic and air-core inductors with characteristic low resistance and high quality factor on package substrates. The research work includes three parts which are summarized below. First, the CoFeHfO nanogranular magnetic material developed on Si wafers and package substrates by pulsed DC reactive sputtering were investigated. On Si wafers, the optimized CoFeHfO film has soft magnetic properties. On printed circuit board (PCB) substrates, these magnetic properties degrade due to the rough surface. Surface planarization such as chemical-mechanical polishing can be applied on PCB substrates to reduce the surface roughness and hence improve these properties. Second, on-package inductors with small resistances and high quality factors were designed, fabricated, measured and analyzed. Air-core and magnetic inductors (20 design variations) were built on 8-inch PCB substrates. The DC resistances of these inductors are less than 12 mO, one of the lowest values ever reported. The maximum quality factors can be as large as ˜80 at around 1 GHz for the air-core inductors and ˜25 at 200 MHz for the magnetic inductors. Third, inductor simulation was carried out to study the effects of magnetic materials on the properties of inductors using the Ansoft HFSS software package. The measurement data for the permeability spectra of the CoFeHfO film and the tensor nature of the permeability were taken into account in the simulation. The simulation results matched the experimental data for the inductances, resistances and quality factors. This

3D electroplated inductors with thickness variation for improved broadband performance

NASA Astrophysics Data System (ADS)

Farm-Guoo Tseng, Victor; Bedair, Sarah S.; Lazarus, Nathan

2017-01-01

The performance of an RF spiral inductor is based on the balance between ohmic losses in the outer turns and eddy current losses dominant in the inner turns where the magnetic field is the strongest. In this work, air-core spiral inductors with winding trace thicknesses decreasing towards the center are demonstrated, achieving quality factor improvement over a wide frequency range compared to uniform thickness inductors. A custom 3D copper electroplating process was used to produce spiral inductors with varying winding thicknesses in a single plating step, with patterned gaps in a seed layer used to create delays in the vertical plating. The fabricated center-lowered coil inductors were 80 nH within a one square millimeter area with thickness varying from 60 µm to 10 µm from outer to inner winding. Within the 16 MHz-160 MHz range, the center-lowered inductors were shown to have a maximum to minimum quality factor improvement of 90%-10% when compared to uniform thickness inductors with thicknesses ranging from 60 µm to 10 µm. Compared to the 20 µm uniform thickness inductor which has the optimal performance among all uniform thickness inductors in this frequency range, the center-lowered inductors were shown to achieve a maximum quality factor improvement of 20% at the edge frequencies of 16 MHz and 160 MHz, and a minimum quality factor improvement of 10% near the geometric mean center frequency of 46 MHz.

Cmos spdt switch for wlan applications

NASA Astrophysics Data System (ADS)

Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

2015-04-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

PubMed Central

Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

2010-01-01

This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

On-Chip Out-of-Plane High-Q Inductors

DTIC Science & Technology

2002-01-01

and leaves the substrate available for circuits. Magnetic forces [2] and the surface tension of a molten dot of solder [3] or polymer [4] have been...and P. Renaud, "High aspect ratio planar coils embedded in SU8 photoepoxy for MEMS applications," Tech. Digest Eurosensors XII, Southampton, Sep. 13-16

A Novel Offset Cancellation Based on Parasitic-Insensitive Switched-Capacitor Sensing Circuit for the Out-of-Plane Single-Gimbaled Decoupled CMOS-MEMS Gyroscope

PubMed Central

Chang, Ming-Hui; Huang, Han-Pang

2013-01-01

This paper presents a novel parasitic-insensitive switched-capacitor (PISC) sensing circuit design in order to obtain high sensitivity and ultra linearity and reduce the parasitic effect for the out-of-plane single-gimbaled decoupled CMOS-MEMS gyroscope (SGDG). According to the simulation results, the proposed PISC circuit has better sensitivity and high linearity in a wide dynamic range. Experimental results also show a better performance. In addition, the PISC circuit can use signal processing to cancel the offset and noise. Thus, this circuit is very suitable for gyroscope measurement. PMID:23493122

A CMOS-MEMS clamped–clamped beam displacement amplifier for resonant switch applications

NASA Astrophysics Data System (ADS)

Liu, Jia-Ren; Lu, Shih-Chuan; Tsai, Chun-Pu; Li, Wei-Chang

2018-06-01

This paper presents a micromechanical clamped–clamped beam (CC-beam) displacement amplifier based on a CMOS-MEMS fabrication process platform. In particular, a 2.0 MHz resonant displacement amplifier composed of two identical CC-beams coupled by a mechanical beam at locations where the two beams have mismatched velocities exhibits a larger displacement, up to 9.96×, on one beam than that of the other. The displacement amplification prevents unwanted input impacting—the structure switches only to the output but not the input—required by resonant switch-based mechanical circuits (Kim et al 2009 22nd IEEE Int. Conf. on Micro Electro Mechanical Systems; Lin et al 2009 15th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’09) Li et al 2013 17th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’13)). Compared to a single CC-beam displacement amplifier, theory predicts that the displacement amplifying CC-beam array yields a larger overall output displacement for displacement gain beyond 1.13 thanks to the preserved input driving force. A complete analytical model predicts the resultant stiffness and displacement gain of the coupled CC-beam displacement amplifier that match well with finite element analysis (FEA) prediction and measured results.

A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

PubMed Central

Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

2016-01-01

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

Coupled and decoupled on-chip solenoid inductors with nanogranular magnetic cores

NASA Astrophysics Data System (ADS)

He, Yuhan; Wang, Luo; Wang, Yicheng; Zhang, Huaiwu; Peng, Dongliang; Bai, Feiming

2017-12-01

On-chip integrated solenoid inductors with multilayered nanogranular magnetic cores have been designed and fabricated on silicon wafers. Both decoupled and coupled inductors with multilayered magnetic cores were studied. For the decoupled inductor, an inductance of 14.2 nH or an equivalent inductance area density greater than 100 nH/mm2 was obtained, which is about 14 times of that of the air-core inductor, and the quality factor is 7.5 at 130 MHz. For the coupled inductor, an even higher peak quality factor of 17 was achieved at 300 MHz, however, the inductance area density decreased to 34 nH/mm2. The reason of the enhanced peak quality factor was attributed to less spike domains on the edge of the closure-loop shaped magnetic core, and therefore higher permeability and more uniform uniaxial anisotropy.

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

NASA Astrophysics Data System (ADS)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

Microelectromechanical tunable inductor

DOEpatents

Stalford, Harold L [Norman, OK; Hietala, Vincent M [Albuquerque, NM; Fleming, James G [Albuquerque, NM; Fleming, legal representative, Carol

2010-05-04

A microelectromechanical tunable inductor is formed from a pair of substantially-identically-sized coils arranged side by side and coiled up about a central axis which is parallel to a supporting substrate. An in-plane stress gradient is responsible for coiling up the coils which. The inductance provided by the tunable inductor can be electrostatically changed either continuously or in discrete steps using electrodes on the substrate and on each coil. The tunable inductor can be formed with processes which are compatible with conventional IC fabrication so that, in some cases, the tunable inductor can be formed on a semiconductor substrate alongside or on top of an IC.

A Fully Integrated Quartz MEMS VHF TCXO.

PubMed

Kubena, Randall L; Stratton, Frederic P; Nguyen, Hung D; Kirby, Deborah J; Chang, David T; Joyce, Richard J; Yong, Yook-Kong; Garstecki, Jeffrey F; Cross, Matthew D; Seman, S E

2018-06-01

We report on a 32-MHz quartz temperature compensated crystal oscillator (TCXO) fully integrated with commercial CMOS electronics and vacuum packaged at wafer level using a low-temperature MEMS-after quartz process. The novel quartz resonator design provides for stress isolation from the CMOS substrate, thereby yielding classical AT-cut f/T profiles and low hysteresis which can be compensated to < ±0.2 parts per million over temperature using on-chip third-order compensation circuitry. The TCXO operates at low power of 2.5 mW and can be thinned to as part of the wafer-level eutectic encapsulation. Full integration with large state-of-the-art CMOS wafers is possible using carrier wafer techniques.

MEMS/MOEMS foundry services at INO

NASA Astrophysics Data System (ADS)

García-Blanco, Sonia; Ilias, Samir; Williamson, Fraser; Généreux, Francis; Le Noc, Loïc; Poirier, Michel; Proulx, Christian; Tremblay, Bruno; Provençal, Francis; Desroches, Yan; Caron, Jean-Sol; Larouche, Carl; Beaupré, Patrick; Fortin, Benoit; Topart, Patrice; Picard, Francis; Alain, Christine; Pope, Timothy; Jerominek, Hubert

2010-06-01

In the MEMS manufacturing world, the "fabless" model is getting increasing importance in recent years as a way for MEMS manufactures and startups to minimize equipment costs and initial capital investment. In order for this model to be successful, the fabless company needs to work closely with a MEMS foundry service provider. Due to the lack of standardization in MEMS processes, as opposed to CMOS microfabrication, the experience in MEMS development processes and the flexibility of the MEMS foundry are of vital importance. A multidisciplinary team together with a complete microfabrication toolset allows INO to offer unique MEMS foundry services to fabless companies looking for low to mid-volume production. Companies that benefit from their own microfabrication facilities can also be interested in INO's assistance in conducting their research and development work during periods where production runs keep their whole staff busy. Services include design, prototyping, fabrication, packaging, and testing of various MEMS and MOEMS devices on wafers fully compatible with CMOS integration. Wafer diameters ranging typically from 1 inch to 6 inches can be accepted while 8-inch wafers can be processed in some instances. Standard microfabrication techniques such as metal, dielectric, and semiconductor film deposition and etching as well as photolithographic pattern transfer are available. A stepper permits reduction of the critical dimension to around 0.4 μm. Metals deposited by vacuum deposition methods include Au, Ag, Al, Al alloys, Ti, Cr, Cu, Mo, MoCr, Ni, Pt, and V with thickness varying from 5 nm to 2 μm. Electroplating of several materials including Ni, Au and In is also available. In addition, INO has developed and built a gold black deposition facility to answer customer's needs for broadband microbolometric detectors. The gold black deposited presents specular reflectance of less than 10% in the wavelength range from 0.2 μm to 100 μm with thickness ranging from

Wearable Wireless Telemetry System for Implantable BioMEMS Sensors

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Miranda, Felix A.; Wilson, Jeffrey D.; Simons, Renita E.

2008-01-01

Telemetry systems of a type that have been proposed for the monitoring of physiological functions in humans would include the following subsystems: Surgically implanted or ingested units that would comprise combinations of microelectromechanical systems (MEMS)- based sensors [bioMEMS sensors] and passive radio-frequency (RF) readout circuits that would include miniature loop antennas. Compact radio transceiver units integrated into external garments for wirelessly powering and interrogating the implanted or ingested units. The basic principles of operation of these systems are the same as those of the bioMEMS-sensor-unit/external-RFpowering- and-interrogating-unit systems described in "Printed Multi-Turn Loop Antennas for Biotelemetry" (LEW-17879-1) NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 48, and in the immediately preceding article, "Hand-Held Units for Short-Range Wireless Biotelemetry" (LEW-17483-1). The differences between what is reported here and what was reported in the cited prior articles lie in proposed design features and a proposed mode of operation. In a specific system of the type now proposed, the sensor unit would comprise mainly a capacitive MEMS pressure sensor located in the annular region of a loop antenna (more specifically, a square spiral inductor/ antenna), all fabricated as an integral unit on a high-resistivity silicon chip. The capacitor electrodes, the spiral inductor/antenna, and the conductor lines interconnecting them would all be made of gold. The dimensions of the sensor unit have been estimated to be about 110.4 mm. The external garment-mounted powering/ interrogating unit would include a multi-turn loop antenna and signal-processing circuits. During operation, this external unit would be positioned in proximity to the implanted or ingested unit to provide for near-field, inductive coupling between the loop antennas, which we have as the primary and secondary windings of an electrical transformer.

ZnO on nickel RF micromechanical resonators for monolithic wireless communication applications

NASA Astrophysics Data System (ADS)

Wei, Mian; Avila, Adrian; Rivera, Ivan; Baghelani, Masoud; Wang, Jing

2017-05-01

On-chip integrability of high-Q RF passives alongside CMOS transistors is crucial for the implementation of monolithic radio transceivers. One of the most significant bottlenecks in back-end-of-line (BEoL) integration of MEMS devices on CMOS processed wafers is their relatively low thermal budget, which is less than that required for typical MEMS material deposition processes. This paper investigates electroplated nickel as a structural material for piezoelectrically-transduced resonators to demonstrate ZnO-on-nickel resonators with a CMOS-compatible low temperature process for the first time. Aside from the obvious manufacturing cost benefit, electroplated nickel is a reasonable substitute for polycrystalline or single crystal silicon and thin-film microcrystalline diamond device layers, while realizing decent acoustic velocity and moderate Q. Electroplated nickel has been already adopted by MEMSCAP, a multi-user MEMS process foundry, in its MetalMUMPs process. Furthermore, it is observed that a localized annealing process through Joule heating can be exploited to significantly improve the effective mechanical quality factor for the ZnO-on-nickel resonators, which is still lower than the reported AlN resonators. This work demonstrates ZnO-on-nickel piezoelectrically-actuated MEMS resonators and resonator arrays by using an IC compatible low temperature process. There is room for performance improvement by lowering the acoustic energy losses in the ZnO and nickel layers.

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

NASA Astrophysics Data System (ADS)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

Coupling Inductor Based Hybrid Millimeter-Wave Switch

NASA Technical Reports Server (NTRS)

Gu, Qun (Inventor); Drouin, Brian J. (Inventor); Tang, Adrian J. (Inventor); Shu, Ran (Inventor)

2017-01-01

A switch comprising a plurality of inductors and a plurality of shunt transistors is described. Each inductor can be electrically coupled between adjacent shunt transistors to form a distributed switch structure. At least two inductors in the plurality of inductors can be inductively coupled with each other. The plurality of inductors can correspond to portions of a coupling inductor, wherein the coupling inductor can have an irregular octagonal shape.

High Volume Manufacturing and Field Stability of MEMS Products

NASA Astrophysics Data System (ADS)

Martin, Jack

significant factors in MEMS product cost. These devices have extremelyhigh surface/volume ratios, so performance and stability may depend on the control of surface characteristics after packaging. Looking into the future, the competitive advantage of IC suppliers will decrease as small companies learn to integrate MEMS/NEMS devices on CMOS foundry wafers. Packaging challenges still remain, because most MEMS/NEMS products must interact with the environment without degrading stability or reliability. Generic packaging solutions are unlikely. However, packaging subcontractors recognize that MEMS/NEMS is a growth opportunity. They will spread the overhead burden of high-capital-cost-facilities by developing flexible processes in order to package several types of moderate volume integrated MEMS/NEMS products on the same equipment.

High Volume Manufacturing and Field Stability of MEMS Products

NASA Astrophysics Data System (ADS)

Martin, Jack

significant factors in MEMS product cost. These devices have extremely high surface/volume ratios, so performance and stability may depend on the control of surface characteristics after packaging. Looking into the future, the competitive advantage of IC suppliers will decrease as small companies learn to integrate MEMS/NEMS devices on CMOS foundry wafers. Packaging challenges still remain, because most MEMS/NEMS products must interact with the environment without degrading stability or reliability. Generic packaging solutions are unlikely. However, packaging subcontractors recognize that MEMS/NEMS is a growth opportunity. They will spread the overhead burden of high-capital-cost-facilities by developing flexible processes in order to package several types of moderate volume integrated MEMS/NEMS products on the same equipment.

3D MEMS in Standard Processes: Fabrication, Quality Assurance, and Novel Measurement Microstructures

NASA Technical Reports Server (NTRS)

Lin, Gisela; Lawton, Russell A.

2000-01-01

Three-dimensional MEMS microsystems that are commercially fabricated require minimal post-processing and are easily integrated with CMOS signal processing electronics. Measurements to evaluate the fabrication process (such as cross-sectional imaging and device performance characterization) provide much needed feedback in terms of reliability and quality assurance. MEMS technology is bringing a new class of microscale measurements to fruition. The relatively small size of MEMS microsystems offers the potential for higher fidelity recordings compared to macrosize counterparts, as illustrated in the measurement of muscle cell forces.

Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors

PubMed Central

Hsieh, Chen-Hsuan; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT. PMID:24172287

Low-Power SOI CMOS Transceiver

NASA Technical Reports Server (NTRS)

Fujikawa, Gene (Technical Monitor); Cheruiyot, K.; Cothern, J.; Huang, D.; Singh, S.; Zencir, E.; Dogan, N.

2003-01-01

The work aims at developing a low-power Silicon on Insulator Complementary Metal Oxide Semiconductor (SOI CMOS) Transceiver for deep-space communications. RF Receiver must accomplish the following tasks: (a) Select the desired radio channel and reject other radio signals, (b) Amplify the desired radio signal and translate them back to baseband, and (c) Detect and decode the information with Low BER. In order to minimize cost and achieve high level of integration, receiver architecture should use least number of external filters and passive components. It should also consume least amount of power to minimize battery cost, size, and weight. One of the most stringent requirements for deep-space communication is the low-power operation. Our study identified that two candidate architectures listed in the following meet these requirements: (1) Low-IF receiver, (2) Sub-sampling receiver. The low-IF receiver uses minimum number of external components. Compared to Zero-IF (Direct conversion) architecture, it has less severe offset and flicker noise problems. The Sub-sampling receiver amplifies the RF signal and samples it using track-and-hold Subsampling mixer. These architectures provide low-power solution for the short- range communications missions on Mars. Accomplishments to date include: (1) System-level design and simulation of a Double-Differential PSK receiver, (2) Implementation of Honeywell SOI CMOS process design kit (PDK) in Cadence design tools, (3) Design of test circuits to investigate relationships between layout techniques, geometry, and low-frequency noise in SOI CMOS, (4) Model development and verification of on-chip spiral inductors in SOI CMOS process, (5) Design/implementation of low-power low-noise amplifier (LNA) and mixer for low-IF receiver, and (6) Design/implementation of high-gain LNA for sub-sampling receiver. Our initial results show that substantial improvement in power consumption is achieved using SOI CMOS as compared to standard CMOS

A MEMS-based, wireless, biometric-like security system

NASA Astrophysics Data System (ADS)

Cross, Joshua D.; Schneiter, John L.; Leiby, Grant A.; McCarter, Steven; Smith, Jeremiah; Budka, Thomas P.

2010-04-01

We present a system for secure identification applications that is based upon biometric-like MEMS chips. The MEMS chips have unique frequency signatures resulting from fabrication process variations. The MEMS chips possess something analogous to a "voiceprint". The chips are vacuum encapsulated, rugged, and suitable for low-cost, highvolume mass production. Furthermore, the fabrication process is fully integrated with standard CMOS fabrication methods. One is able to operate the MEMS-based identification system similarly to a conventional RFID system: the reader (essentially a custom network analyzer) detects the power reflected across a frequency spectrum from a MEMS chip in its vicinity. We demonstrate prototype "tags" - MEMS chips placed on a credit card-like substrate - to show how the system could be used in standard identification or authentication applications. We have integrated power scavenging to provide DC bias for the MEMS chips through the use of a 915 MHz source in the reader and a RF-DC conversion circuit on the tag. The system enables a high level of protection against typical RFID hacking attacks. There is no need for signal encryption, so back-end infrastructure is minimal. We believe this system would make a viable low-cost, high-security system for a variety of identification and authentication applications.

Three-dimensional coil inductor

DOEpatents

Bernhardt, Anthony F.; Malba, Vincent

2002-01-01

A three-dimensional coil inductor is disclosed. The inductor includes a substrate; a set of lower electrically conductive traces positioned on the substrate; a core placed over the lower traces; a set of side electrically conductive traces laid on the core and the lower traces; and a set of upper electrically conductive traces attached to the side traces so as to form the inductor. Fabrication of the inductor includes the steps of forming a set of lower traces on a substrate; positioning a core over the lower traces; forming a set of side traces on the core; connecting the side traces to the lower traces; forming a set of upper traces on the core; and connecting the upper traces to the side traces so as to form a coil structure.

A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

PubMed Central

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-01-01

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S. PMID:25521385

A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.

PubMed

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-12-16

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in "H" type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than -0.01% F.S/°C in the range of -40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

NASA Astrophysics Data System (ADS)

Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

2001-11-01

The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

Design trade-off between spatial resolution and power consumption in CMOS biosensor circuit based on millimeter-wave LC oscillator array

NASA Astrophysics Data System (ADS)

Matsunaga, Maya; Kobayashi, Atsuki; Nakazato, Kazuo; Niitsu, Kiichi

2018-03-01

In this paper, we describe a trade-off between spatial resolution and power consumption in an LC oscillator-based CMOS biosensor, which can detect biomolecules by observing the resonance frequency shift due to changes in the complex permittivity of the biomolecules. The optimal operating frequency and improvement in the image resolution of the sensor output require a reduction in the size of the inductor. However, it is necessary to increase the transconductance of the cross-coupling transistor to achieve the oscillation condition, although the power consumption increases. We confirmed the trade-off between the spatial resolution and the power consumption of this sensor using SPICE simulation. A test chip was fabricated using a 65 nm CMOS process, and the transition in the peak frequency and the power consumption were measured. When the outer diameter of the inductor was 46 µm, the power consumption was 31.2 mW, which matched well with the simulation results.

A MEMS square Chladni plate resonator

NASA Astrophysics Data System (ADS)

Pala, Sedat; Azgın, Kıvanç

2016-10-01

This paper presents the design, fabrication and tests of a micro-fabricated MEMS ‘Chladni’ plate resonator. The proposed MEMS resonator has a square plate geometry having a side length of 1400 µm and a height of 35 µm. Its geometry and electrode layout are designed to analyze and test as many modes as possible. The MEMS plate is fabricated using a silicon-on-insulator process with a 35 µm thick < \\text{1} \\text{1} \\text{1}> silicon layer on a glass substrate. Transverse vibration of the plate is investigated to obtain closed form natural frequencies and mode shapes, which are derived using the Rayleigh-Ritz energy method, with an electrostatic softening effect included. Closed form equations for the calculation of effective stiffness’, masses and natural frequencies of the two modes (mode (1,1) and mode (2,0)-(0,2)) are presented, with and without electrostatic softening. The analytical model is verified for those modes by finite-element simulations, frequency response tests in vacuum and laser Doppler vibrometer (LDV) experiments. The derived model deviates from the finite-element analysis by 3.35% for mode (1,1) and 6.15% for mode (2,0)-(0,2). For verification, the frequency responses of the plates are measured with both electrostatic excitation-detection at around 20 mTorr vacuum ambient and LDV at around 0.364 mTorr vacuum ambient. The resonance frequency and Q-factor of mode (1,1) are measured to be 104.2 kHz and 14 300, respectively. For mode (2,0)-(0,2), the measured resonance frequency and Q-factor are 156.68 kHz and 10 700, respectively. The presented LDV results also support both natural frequencies of interest and corresponding mode shapes of the plate structure.

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

NASA Astrophysics Data System (ADS)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

NASA Astrophysics Data System (ADS)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

Sub-100 μm scale on-chip inductors with CoZrTa for GHz applications

NASA Astrophysics Data System (ADS)

Xu, Wei; Wu, Hao; Gardner, Donald S.; Sinha, Saurabh; Dastagir, Tawab; Bakkaloglu, Bertan; Cao, Yu; Yu, Hongbin

2011-04-01

On-chip inductors with magnetic material are fabricated with complementary metal-oxide semiconductor processes. The inductors use copper metallization and amorphous CoZrTa thinfilms. Enhancements of 3.5X in inductance and 3X for the quality factor at frequencies as highas 3 GHz have been successfully demonstrated by using a continuous CoZrTa-ring structure in spiral inductors at the 100 μm scale. Further improvement of the frequency response of inductance up to 6 GHz was achieved by micro-patterning the magnetic film. The effect ofincreasing the film thickness on the performance of strip line inductors was measured and modeled. This work demonstrates significantly larger increases in inductance and quality factor atabove 1 GHz as compared to prior efforts, thereby making the added processing cost worthwhile.

Inductors and Inductance-Resistance Networks.

ERIC Educational Resources Information Center

Kirwin, Gerald J.

This programed booklet presents ideas related to inductors and inductance--resistance networks. It is designed for the engineering student who is familiar with differential equations and electrical networks. A variety of cases are considered with the idea of developing in the student a broad acquaintance with the inductor response. The booklet is…

Ferrofluid-based Stretchable Magnetic Core Inductors

NASA Astrophysics Data System (ADS)

Lazarus, N.; Meyer, C. D.

2015-12-01

Magnetic materials are commonly used in inductor and transformer cores to increase inductance density. The emerging field of stretchable electronics poses a new challenge since typical magnetic cores are bulky, rigid and often brittle. This paper presents, for the first time, stretchable inductors incorporating ferrofluid as a liquid magnetic core. Ferrofluids, suspensions of nanoscale magnetic particles in a carrier liquid, provide enhanced magnetic permeability without changing the mechanical properties of the surrounding elastomer. The inductor tested in this work consisted of a liquid metal solenoid wrapped around a ferrofluid core in separate channels. The low frequency inductance was found to increase from 255 nH before fill to 390 nH after fill with ferrofluid, an increase of 52%. The inductor was also shown to survive uniaxial strains of up to 100%.

Two-inductor boost and buck converters

NASA Astrophysics Data System (ADS)

White, J. L.; Muldoon, W. J.

The derivation, analysis and design of a coupled inductor boost converter is presented. Aspects of the qualitative ac behavior of coupled inductor converters are discussed. Considerations for the design of the magnetics for such converters are addressed.

Continuum Modeling of Inductor Hysteresis and Eddy Current Loss Effects in Resonant Circuits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pries, Jason L.; Tang, Lixin; Burress, Timothy A.

This paper presents experimental validation of a high-fidelity toroid inductor modeling technique. The aim of this research is to accurately model the instantaneous magnetization state and core losses in ferromagnetic materials. Quasi–static hysteresis effects are captured using a Preisach model. Eddy currents are included by coupling the associated quasi-static Everett function to a simple finite element model representing the inductor cross sectional area. The modeling technique is validated against the nonlinear frequency response from two different series RLC resonant circuits using inductors made of electrical steel and soft ferrite. The method is shown to accurately model shifts in resonant frequencymore » and quality factor. The technique also successfully predicts a discontinuity in the frequency response of the ferrite inductor resonant circuit.« less

Poly-SiGe MEMS actuators for adaptive optics

NASA Astrophysics Data System (ADS)

Lin, Blake C.; King, Tsu-Jae; Muller, Richard S.

2006-01-01

Many adaptive optics (AO) applications require mirror arrays with hundreds to thousands of segments, necessitating a CMOS-compatible MEMS process to integrate the mirrors with their driving electronics. This paper proposes a MEMS actuator that is fabricated using low-temperature polycrystalline silicon-germanium (poly-SiGe) surface-micromaching technology (total thermal budget is 6 hours at or below 425°C). The MEMS actuator consists of three flexures and a hexagonal platform, on which a micromirror is to be assembled. The flexures are made of single-layer poly-SiGe with stress gradient across thickness of the film, making them bend out-of-plane after sacrificial-layer release to create a large nominal gap. The platform, on the other hand, has an additional stress-balancing SiGe layer deposited on top, making the dual-layer stack stay flat after release. Using this process, we have successfully fabricated the MEMS actuator which is lifted 14.6 μm out-of-plane by 290-μm-long flexures. The 2-μm-thick hexagonal mirror-platform exhibits a strain gradient of -5.5×10 -5 μm -1 (equivalent to 18 mm radius-of-curvature), which would be further reduced once the micromirror is assembled.

Stretchable inductor with liquid magnetic core

NASA Astrophysics Data System (ADS)

Lazarus, N.; Meyer, C. D.

2016-03-01

Adding magnetic materials is a well-established method for improving performance of inductors. However, traditional magnetic cores are rigid and poorly suited for the emerging field of stretchable electronics, where highly deformable inductors are used to wirelessly couple power and data signals. In this work, stretchable inductors are demonstrated based on the use of ferrofluids, magnetic liquids based on distributed magnetic particles, to create a compliant magnetic core. Using a silicone molding technique to create multi-layer fluidic channels, a liquid metal solenoid is fabricated around a ferrofluid channel. An analytical model is developed for the effects of mechanical strain, followed by experimental verification using two different ferrofluids with different permeabilities. Adding ferrofluid was found to increase the unstrained inductance by up to 280% relative to a similar inductor with a non-magnetic silicone core, while retaining the ability to survive uniaxial strains up to 100%.

Programmable differential capacitance-to-voltage converter for MEMS accelerometers

NASA Astrophysics Data System (ADS)

Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

2017-05-01

Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

A wideband CMOS single-ended low noise amplifier employing negative resistance technique

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Hongpeng; Wang, Xuebing; Chen, Jun; Li, Yueyue; Jin, Haiyan; Yang, Yongjun

2018-02-01

A wideband common-gate CMOS low noise amplifier with negative resistance technique is proposed. A novel single-ended negative resistance structure is employed to improve gain and noise of the LNA. The inductor resonating is adopted at the input stage and load stage to meet wideband matching and compensate gain roll-off at higher frequencies. Implemented in a 0.18 μm CMOS technology, the proposed LNA demonstrates in simulations a maximal gain of 16.4 dB across the 3 dB bandwidth of 0.2-3 GHz. The in-band noise figure of 3.4-4.7 dB is obtained while the IIP3 of 5.3-6.8 dBm and IIP2 of 12.5-17.2 dBm are post-simulated in the designed frequency band. The LNA core consumes a power dissipation of 3.8 mW under a 1.5 V power supply.

CMOS integration of inkjet-printed graphene for humidity sensing.

PubMed

Santra, S; Hu, G; Howe, R C T; De Luca, A; Ali, S Z; Udrea, F; Gardner, J W; Ray, S K; Guha, P K; Hasan, T

2015-11-30

We report on the integration of inkjet-printed graphene with a CMOS micro-electro-mechanical-system (MEMS) microhotplate for humidity sensing. The graphene ink is produced via ultrasonic assisted liquid phase exfoliation in isopropyl alcohol (IPA) using polyvinyl pyrrolidone (PVP) polymer as the stabilizer. We formulate inks with different graphene concentrations, which are then deposited through inkjet printing over predefined interdigitated gold electrodes on a CMOS microhotplate. The graphene flakes form a percolating network to render the resultant graphene-PVP thin film conductive, which varies in presence of humidity due to swelling of the hygroscopic PVP host. When the sensors are exposed to relative humidity ranging from 10-80%, we observe significant changes in resistance with increasing sensitivity from the amount of graphene in the inks. Our sensors show excellent repeatability and stability, over a period of several weeks. The location specific deposition of functional graphene ink onto a low cost CMOS platform has the potential for high volume, economic manufacturing and application as a new generation of miniature, low power humidity sensors for the internet of things.

CMOS integration of inkjet-printed graphene for humidity sensing

PubMed Central

Santra, S.; Hu, G.; Howe, R. C. T.; De Luca, A.; Ali, S. Z.; Udrea, F.; Gardner, J. W.; Ray, S. K.; Guha, P. K.; Hasan, T.

2015-01-01

We report on the integration of inkjet-printed graphene with a CMOS micro-electro-mechanical-system (MEMS) microhotplate for humidity sensing. The graphene ink is produced via ultrasonic assisted liquid phase exfoliation in isopropyl alcohol (IPA) using polyvinyl pyrrolidone (PVP) polymer as the stabilizer. We formulate inks with different graphene concentrations, which are then deposited through inkjet printing over predefined interdigitated gold electrodes on a CMOS microhotplate. The graphene flakes form a percolating network to render the resultant graphene-PVP thin film conductive, which varies in presence of humidity due to swelling of the hygroscopic PVP host. When the sensors are exposed to relative humidity ranging from 10–80%, we observe significant changes in resistance with increasing sensitivity from the amount of graphene in the inks. Our sensors show excellent repeatability and stability, over a period of several weeks. The location specific deposition of functional graphene ink onto a low cost CMOS platform has the potential for high volume, economic manufacturing and application as a new generation of miniature, low power humidity sensors for the internet of things. PMID:26616216

CMOS integration of inkjet-printed graphene for humidity sensing

NASA Astrophysics Data System (ADS)

Santra, S.; Hu, G.; Howe, R. C. T.; de Luca, A.; Ali, S. Z.; Udrea, F.; Gardner, J. W.; Ray, S. K.; Guha, P. K.; Hasan, T.

2015-11-01

We report on the integration of inkjet-printed graphene with a CMOS micro-electro-mechanical-system (MEMS) microhotplate for humidity sensing. The graphene ink is produced via ultrasonic assisted liquid phase exfoliation in isopropyl alcohol (IPA) using polyvinyl pyrrolidone (PVP) polymer as the stabilizer. We formulate inks with different graphene concentrations, which are then deposited through inkjet printing over predefined interdigitated gold electrodes on a CMOS microhotplate. The graphene flakes form a percolating network to render the resultant graphene-PVP thin film conductive, which varies in presence of humidity due to swelling of the hygroscopic PVP host. When the sensors are exposed to relative humidity ranging from 10-80%, we observe significant changes in resistance with increasing sensitivity from the amount of graphene in the inks. Our sensors show excellent repeatability and stability, over a period of several weeks. The location specific deposition of functional graphene ink onto a low cost CMOS platform has the potential for high volume, economic manufacturing and application as a new generation of miniature, low power humidity sensors for the internet of things.

The development of differential inductors using double air-bridge structure based on integrated passive device technology

NASA Astrophysics Data System (ADS)

Li, Yang; Yao, Zhao; Fu, Xiao-Qian; Li, Zhi-Ming; Shan, Fu-Kai; Wang, Cong

2017-05-01

Recently, integrated passive devices have become increasingly popular; inductor realization, in particular, offers interesting high performance for RF modules and systems. In this paper, a development of differential inductor fabricated by integrated passive devices technology using a double air-bridge structure is presented. A study of the model development of the differential inductor is first demonstrated. In this model section, a segment box analysis method is applied to provide a clear presentation of the differential inductor. Compared with other work that only shows a brief description of the process, the integrated passive devices process used to fabricate the inductor in this study is elaborated on. Finally, a characterization of differential inductors with different physical layout parameters is illustrated based on inductance and quality factors, which provides a valuable reference for realizing high performance. The proposed work provides a good solution for the design, fabrication and practical application of RF modules and systems.

Performance of Inductors Attached to a Galvanizing Bath

NASA Astrophysics Data System (ADS)

Zhou, Xinping; Yuan, Shuo; Liu, Chi; Yang, Peng; Qian, Chaoqun; Song, Bao

2013-12-01

By taking a galvanizing bath with inductors from an Iron and Steel Co., Ltd as an example, the distributions of Lorentz force and generated heat in the inductor are simulated. As a result, the zinc flow and the temperature distribution driven by the Lorentz force and the generated heat in the inductor of a galvanizing bath are simulated numerically, and their characteristics are analyzed. The relationship of the surface-weighted average velocity at the outlet and the temperature difference between the inlet and the outlet and the effective power for the inductor is studied. Results show that with an increase in effective power for the inductor, the surface-weighted average velocity at the outlet and the temperature difference between the inlet and the outlet increase gradually. We envisage this work to lay a foundation for the study of the performance of the galvanizing bath in future.

Design Considerations for High Temperature Power Inductors

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2005-01-01

A uniform B-field approximation model is used to develop design formulas for single-layer wound, toroidal core, ac power inductors that must handle a specified current. Such a geometry is well suited for high temperature, high frequency inductors, where removal of heat from the core becomes critical. Explicit expressions are derived for core radii, core and winding volumes, winding turns and core permeability as functions of a dimensional scaling ratio (S). A limit on the maximum allowed core B-field leads to the result that the minimum core volume is proportional to the permeability, which has a lower bound. Plots versus S are provided for a specific case, to show that good designs can be picked in the overlap regions around the minima in mass and overall size, where the mass and size are relatively flat. Data to 250 C are presented for an MPP core based inductor to show that a quasi-linear, high temperature inductor can be constructed with available materials. A similar development is applied to a toroidal air-core geometry, showing that for the same ratings, such an inductor is considerably bigger and more massive, at least in the single-layer version.

Linear frequency tuning in an LC-resonant system using a C-V response controllable MEMS varactor

NASA Astrophysics Data System (ADS)

Han, Chang-Hoon; Yoon, Yong-Hoon; Ko, Seung-Deok; Seo, Min-Ho; Yoon, Jun-Bo

2017-12-01

This paper proposes a device level solution to achieve linear frequency tuning with respect to a tuning voltage ( V tune ) sweep in an inductor ( L)-capacitor ( C) resonant system. Since the linearity of the resonant frequency vs. tuning voltage ( f- V) relationship in an LC-resonant system is closely related to the C- V response characteristic of the varactor, we propose a C- V response tunable varactor to realize the linear frequency tuning. The proposed varactor was fabricated using microelectromechanical system (MEMS) surface micromachining. The fabricated MEMS varactor has the ability to dynamically change the C- V response characteristic according to a curve control voltage ( V curve- control ). When V curve- control was increased from zero to 9 V, the C- V response curve was changed from a linear to a concave form (i.e., the capacitance decreased quickly in the low tuning voltage region and slowly in the high tuning voltage region). This change in the C- V response characteristic resulted in a change in the f- V relationship, and we successfully demonstrated almost perfectly linear frequency tuning in the LC-resonant system, with a linearity factor of 99.95%.

Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Hirakawa, Atsushi; Stefanelli, Bruno; Mori, Isao; Okamoto, Yuki; Morishita, Satoshi; Kubota, Masanori; Lebrasseur, Eric; Kaiser, Andreas

2018-04-01

In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout.

270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

2011-11-01

TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

Application of genetic algorithm in modeling on-wafer inductors for up to 110 Ghz

NASA Astrophysics Data System (ADS)

Liu, Nianhong; Fu, Jun; Liu, Hui; Cui, Wenpu; Liu, Zhihong; Liu, Linlin; Zhou, Wei; Wang, Quan; Guo, Ao

2018-05-01

In this work, the genetic algorithm has been introducted into parameter extraction for on-wafer inductors for up to 110 GHz millimeter-wave operations, and nine independent parameters of the equivalent circuit model are optimized together. With the genetic algorithm, the model with the optimized parameters gives a better fitting accuracy than the preliminary parameters without optimization. Especially, the fitting accuracy of the Q value achieves a significant improvement after the optimization.

Microactuateur electrothermique bistable: Etude d'implementation avec une technologie standard CMOS

NASA Astrophysics Data System (ADS)

Ressejac, Isabelle

The general objective of this Ph.D. thesis was to study the implementation of a new type of eletrothermal microactuator. This actuator presents the advantages to be bistable and fabricated in a standard CMOS process, allowing the integration of a microelectronics addressing circuit on the same substrate. Experimental research work, presented in this thesis, relate to the different steps carried out in order to implement this CMOS MEMS device: its theoretical conception, its fabrication with a standard CMOS technology, its micromachining as a post-process, its characterization and its electro-thermo-mechanical modeling. The device was designed and fabricated by using Mitel 1,5 mum CMOS technology and the Can-MEMS service which are both available via the Canadian Microelectronics Corporation. Fabricated monolithically within a standard CMOS process, our microactuator is suitable for large-scale integration due to its small dimensions (length ˜1000 mum and width ˜150 mum). It constitutes the basic component of a N by N matrix controlled by a microelectronic addressing system built on the same substrate. Initially, only one micromachining technique (involving TMAH) was used, and long etching times (>9 h) were requires} in order to release the microstructures. However, the passivation layer from the CMOS process could protect the underlying metal from the TMAH for a sufficient time (only ˜1--2 h). Consequently, we had to develop a micromachining strategy with shorter etching times to allow the complete release of the microstructures without damaging them. Post-processing begins with deposition (by sputtering) of a platinum layer intended to protect the abutment from subsequent etching. Our micromachining strategy is mainly based on the use of a hybrid etching process starting with a first anisotropic TMAH etching followed by a XeF2 isotropic etching. After micromachining, the released microactuator has a significant initial deflection with its tip reaching a height

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate☆

PubMed Central

Chauhan, Veeren M.; Hopper, Richard H.; Ali, Syed Z.; King, Emma M.; Udrea, Florin; Oxley, Chris H.; Aylott, Jonathan W.

2014-01-01

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 °C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol–gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 °C to 145 °C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems. PMID:25844025

Emerging leadership of surface micromachined MEMS for wavelength switching in telecommunications systems

NASA Astrophysics Data System (ADS)

Staple, Bevan D.; Muller, Lilac; Miller, David C.

2003-01-01

We introduce the Network Photonics" CrossWave as the first commercially-available, MEMS-based wavelength selective switch. The CrossWave combines the functionality of signal de-multiplexing, switching and re-multiplexing in a single all-optical operation using a dispersive element and 1-D MEMS. 1-D MEMS, where micromirrors are configured in a single array with a single mirror per wavelength, are fabricated in a standard surface micromachining process. In this paper we present three generations of micromirror designs. With proper design optimization and process improvements we have demonstrated exceptional mirror flatness (<16.2m-1 curvature), surface error (CMOS-like approach of the SUMMiT IV process (currently available at a commercial foundry) have demonstrated the emerging leadership of surface micromachining for upcoming optical telecom-munication applications.

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Saturable inductor and transformer structures for magnetic pulse compression

DOEpatents

Birx, Daniel L.; Reginato, Louis L.

1990-01-01

Saturable inductor and transformer for magnetic compression of an electronic pulse, using a continuous electrical conductor looped several times around a tightly packed core of saturable inductor material.

Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

PubMed

Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

2011-12-01

This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

Gyroscope and Micromirror Design Using Vertical-Axis CMOS-MEMS Actuation and Sensing

DTIC Science & Technology

2002-01-01

Interference pattern around the upper anchor (each fringe occurs at 310 nm vertical displacement...described above require extra lithography step(s) other than standard CMOS lithography steps and/or deposition of structural and sacrificial materials...Instruments’ dig- ital mirror device ( DMD ) [43]. The aluminum thin-film technology with vertical parallel- plate actuation has difficulty in achieving

Investigation of improving MEMS-type VOA reliability

NASA Astrophysics Data System (ADS)

Hong, Seok K.; Lee, Yeong G.; Park, Moo Y.

2003-12-01

MEMS technologies have been applied to a lot of areas, such as optical communications, Gyroscopes and Bio-medical components and so on. In terms of the applications in the optical communication field, MEMS technologies are essential, especially, in multi dimensional optical switches and Variable Optical Attenuators(VOAs). This paper describes the process for the development of MEMS type VOAs with good optical performance and improved reliability. Generally, MEMS VOAs have been fabricated by silicon micro-machining process, precise fibre alignment and sophisticated packaging process. Because, it is composed of many structures with various materials, it is difficult to make devices reliable. We have developed MEMS type VOSs with many failure mode considerations (FMEA: Failure Mode Effect Analysis) in the initial design step, predicted critical failure factors and revised the design, and confirmed the reliability by preliminary test. These predicted failure factors were moisture, bonding strength of the wire, which wired between the MEMS chip and TO-CAN and instability of supplied signals. Statistical quality control tools (ANOVA, T-test and so on) were used to control these potential failure factors and produce optimum manufacturing conditions. To sum up, we have successfully developed reliable MEMS type VOAs with good optical performances by controlling potential failure factors and using statistical quality control tools. As a result, developed VOAs passed international reliability standards (Telcodia GR-1221-CORE).

Investigation of improving MEMS-type VOA reliability

NASA Astrophysics Data System (ADS)

Hong, Seok K.; Lee, Yeong G.; Park, Moo Y.

2004-01-01

MEMS technologies have been applied to a lot of areas, such as optical communications, Gyroscopes and Bio-medical components and so on. In terms of the applications in the optical communication field, MEMS technologies are essential, especially, in multi dimensional optical switches and Variable Optical Attenuators(VOAs). This paper describes the process for the development of MEMS type VOAs with good optical performance and improved reliability. Generally, MEMS VOAs have been fabricated by silicon micro-machining process, precise fibre alignment and sophisticated packaging process. Because, it is composed of many structures with various materials, it is difficult to make devices reliable. We have developed MEMS type VOSs with many failure mode considerations (FMEA: Failure Mode Effect Analysis) in the initial design step, predicted critical failure factors and revised the design, and confirmed the reliability by preliminary test. These predicted failure factors were moisture, bonding strength of the wire, which wired between the MEMS chip and TO-CAN and instability of supplied signals. Statistical quality control tools (ANOVA, T-test and so on) were used to control these potential failure factors and produce optimum manufacturing conditions. To sum up, we have successfully developed reliable MEMS type VOAs with good optical performances by controlling potential failure factors and using statistical quality control tools. As a result, developed VOAs passed international reliability standards (Telcodia GR-1221-CORE).

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

Simulation of MEMS for the Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Mott, Brent; Kuhn, Jonathan; Broduer, Steve (Technical Monitor)

2001-01-01

The NASA Goddard Space Flight Center (GSFC) is developing optical micro-electromechanical system (MEMS) components for potential application in Next Generation Space Telescope (NGST) science instruments. In this work, we present an overview of the electro-mechanical simulation of three MEMS components for NGST, which include a reflective micro-mirror array and transmissive microshutter array for aperture control for a near infrared (NIR) multi-object spectrometer and a large aperture MEMS Fabry-Perot tunable filter for a NIR wide field camera. In all cases the device must operate at cryogenic temperatures with low power consumption and low, complementary metal oxide semiconductor (CMOS) compatible, voltages. The goal of our simulation efforts is to adequately predict both the performance and the reliability of the devices during ground handling, launch, and operation to prevent failures late in the development process and during flight. This goal requires detailed modeling and validation of complex electro-thermal-mechanical interactions and very large non-linear deformations, often involving surface contact. Various parameters such as spatial dimensions and device response are often difficult to measure reliably at these small scales. In addition, these devices are fabricated from a wide variety of materials including surface micro-machined aluminum, reactive ion etched (RIE) silicon nitride, and deep reactive ion etched (DRIE) bulk single crystal silicon. The above broad set of conditions combine to be a formidable challenge for space flight qualification analysis. These simulations represent NASA/GSFC's first attempts at implementing a comprehensive strategy to address complex MEMS structures.

A Low Cost Bluetooth Low Energy Transceiver for Wireless Sensor Network Applications with a Front-end Receiver-Matching Network-Reusing Power Amplifier Load Inductor.

PubMed

Liang, Zhen; Li, Bin; Huang, Mo; Zheng, Yanqi; Ye, Hui; Xu, Ken; Deng, Fangming

2017-04-19

In this work, a low cost Bluetooth Low Energy (BLE) transceiver for wireless sensor network (WSN) applications, with a receiver (RX)-matching network-reusing power amplifier (PA) load inductor, is presented. In order to decrease the die area, only two inductors were used in this work. Besides the one used in the voltage control oscillator (VCO), the PA load inductor was reused as the RX impedance matching component in the front-end. Proper controls have been applied to achieve high transmitter (TX) input impedance when the transceiver is in the receiving mode, and vice versa. This allows the TRX-switch/matching network integration without significant performance degradation. The RX adopted a low-IF structure and integrated a single-ended low noise amplifier (LNA), a current bleeding mixer, a 4th complex filter and a delta-sigma continuous time (CT) analog-to-digital converter (ADC). The TX employed a two-point PLL-based architecture with a non-linear PA. The RX achieved a sensitivity of -93 dBm and consumes 9.7 mW, while the TX achieved a 2.97% error vector magnitude (EVM) with 9.4 mW at 0 dBm output power. This design was fabricated in a 0.11 μm complementary metal oxide semiconductor (CMOS) technology and the front-end circuit only occupies 0.24 mm². The measurement results verify the effectiveness and applicability of the proposed BLE transceiver for WSN applications.

MEMS in Space Systems

NASA Technical Reports Server (NTRS)

Lyke, J. C.; Michalicek, M. A.; Singaraju, B. K.

1995-01-01

Micro-electro-mechanical systems (MEMS) provide an emerging technology that has the potential for revolutionizing the way space systems are designed, assembled, and tested. The high launch costs of current space systems are a major determining factor in the amount of functionality that can be integrated in a typical space system. MEMS devices have the ability to increase the functionality of selected satellite subsystems while simultaneously decreasing spacecraft weight. The Air Force Phillips Laboratory (PL) is supporting the development of a variety of MEMS related technologies as one of several methods to reduce the weight of space systems and increase their performance. MEMS research is a natural extension of PL research objectives in micro-electronics and advanced packaging. Examples of applications that are under research include on-chip micro-coolers, micro-gyroscopes, vibration sensors, and three-dimensional packaging technologies to integrate electronics with MEMS devices. The first on-orbit space flight demonstration of these and other technologies is scheduled for next year.

Spiral Chip Implantable Radiator and Printed Loop External Receptor for RF Telemetry in Bio-Sensor Systems

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Hall, David G.; Miranda, Felix A.

2004-01-01

The paper describes the operation of a patented wireless RF telemetry system, consisting of a bio-MEMS implantable sensor and an external hand held unit, operating over the frequency range of few hundreds of MHz. A MEMS capacitive pressure sensor integrated with a miniature inductor/antenna together constitute the implantable sensor. Signal processing circuits collocated with a printed loop antenna together form the hand held unit, capable of inductively powering and also receiving the telemetry signals from the sensor. The paper in addition, demonstrates a technique to enhance the quality factor and inductance of the inductor in the presence of a lower ground plane and also presents the radiation characteristics of the loop antenna.

A 32 x 32 capacitive micromachined ultrasonic transducer array manufactured in standard CMOS.

PubMed

Lemmerhirt, David F; Cheng, Xiaoyang; White, Robert; Rich, Collin A; Zhang, Man; Fowlkes, J Brian; Kripfgans, Oliver D

2012-07-01

As ultrasound imagers become increasingly portable and lower cost, breakthroughs in transducer technology will be needed to provide high-resolution, real-time 3-D imaging while maintaining the affordability needed for portable systems. This paper presents a 32 x 32 ultrasound array prototype, manufactured using a CMUT-in-CMOS approach whereby ultrasonic transducer elements and readout circuits are integrated on a single chip using a standard integrated circuit manufacturing process in a commercial CMOS foundry. Only blanket wet-etch and sealing steps are added to complete the MEMS devices after the CMOS process. This process typically yields better than 99% working elements per array, with less than ±1.5 dB variation in receive sensitivity among the 1024 individually addressable elements. The CMUT pulseecho frequency response is typically centered at 2.1 MHz with a -6 dB fractional bandwidth of 60%, and elements are arranged on a 250 μm hexagonal grid (less than half-wavelength pitch). Multiplexers and CMOS buffers within the array are used to make on-chip routing manageable, reduce the number of physical output leads, and drive the transducer cable. The array has been interfaced to a commercial imager as well as a set of custom transmit and receive electronics, and volumetric images of nylon fishing line targets have been produced.

A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications.

PubMed

Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

2017-06-07

The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm², which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply.

A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications

PubMed Central

Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

2017-01-01

The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm2, which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply. PMID:28590425

Unity power factor switching regulator

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor)

1983-01-01

A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

Enabling MEMS technologies for communications systems

NASA Astrophysics Data System (ADS)

Lubecke, Victor M.; Barber, Bradley P.; Arney, Susanne

2001-11-01

Modern communications demands have been steadily growing not only in size, but sophistication. Phone calls over copper wires have evolved into high definition video conferencing over optical fibers, and wireless internet browsing. The technology used to meet these demands is under constant pressure to provide increased capacity, speed, and efficiency, all with reduced size and cost. Various MEMS technologies have shown great promise for meeting these challenges by extending the performance of conventional circuitry and introducing radical new systems approaches. A variety of strategic MEMS structures including various cost-effective free-space optics and high-Q RF components are described, along with related practical implementation issues. These components are rapidly becoming essential for enabling the development of progressive new communications systems technologies including all-optical networks, and low cost multi-system wireless terminals and basestations.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ha, Thi Dep, E-mail: hathidep@yahoo.com; Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City; Bao, JingFu, E-mail: baojingfu@uestc.edu.cn

Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics tomore » examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.« less

Rolled-up inductor structure for a radiofrequency integrated circuit (RFIC)

DOEpatents

Li, Xiuling; Huang, Wen; Ferreira, Placid M.; Yu, Xin

2015-12-29

A rolled-up inductor structure for a radiofrequency integrated circuit (RFIC) comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis. The multilayer sheet comprises a conductive pattern layer on a strain-relieved layer, and the conductive pattern layer comprises at least one conductive strip having a length extending in a rolling direction. The at least one conductive strip thereby wraps around the longitudinal axis in the rolled configuration. The conductive pattern layer may also comprise two conductive feed lines connected to the conductive strip for passage of electrical current therethrough. The conductive strip serves as an inductor cell of the rolled-up inductor structure.

Temperature Dependence of Thin Film Spiral Inductors on Alumina Over a Temperature Range of 25 to 475 C

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian C.

2010-01-01

In this paper, we present an analysis of inductors on an Alumina substrate over the temperature range of 25 to 475 C. Five sets of inductors, each set consisting of a 1.5, 2.5, 3.5, and a 4.5 turn inductor with different line width and spacing, were measured on a high temperature probe station from 10 MHz to 30 GHz. From these measured characteristics, it is shown that the inductance is nearly independent of temperature for low frequencies compared to the self resonant frequency, the parasitic capacitances are independent of temperature, and the resistance varies nearly linearly with temperature. These characteristics result in the self resonant frequency decreasing by only a few percent as the temperature is increased from 25 to 475 C, but the maximum quality factor decreases by a factor of 2 to 3. These observations based on measured data are confirmed through 2D simulations using Sonnet software.

Design of a multi-axis implantable MEMS sensor for intraosseous bone stress monitoring

NASA Astrophysics Data System (ADS)

Alfaro, Fernando; Weiss, Lee; Campbell, Phil; Miller, Mark; Fedder, Gary K.

2009-08-01

The capability to assess the biomechanical properties of living bone is important for basic research as well as the clinical management of skeletal trauma and disease. Even though radiodensitometric imaging is commonly used to infer bone quality, bone strength does not necessarily correlate well with these non-invasive measurements. This paper reports on the design, fabrication and initial testing of an implantable ultra-miniature multi-axis sensor for directly measuring bone stresses at a micro-scale. The device, which is fabricated with CMOS-MEMS processes, is intended to be permanently implanted within open fractures, or embedded in bone grafts, or placed on implants at the interfaces between bone and prosthetics. The stress sensor comprises an array of piezoresistive pixels to detect a stress tensor at the interfacial area between the MEMS chip and bone, with a resolution to 100 Pa, in 1 s averaging. The sensor system design and manufacture is also compatible with the integration of wireless RF telemetry, for power and data retrieval, all within a 3 mm × 3 mm × 0.3 mm footprint. The piezoresistive elements are integrated within a textured surface to enhance sensor integration with bone. Finite element analysis led to a sensor design for normal and shear stress detection. A wired sensor was fabricated in the Jazz 0.35 µm BiCMOS process and then embedded in mock bone material to characterize its response to tensile and bending loads up to 250 kPa.

An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology

NASA Astrophysics Data System (ADS)

Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akin, Tayfun

2017-02-01

This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens' CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to

Optical design of microlens array for CMOS image sensors

NASA Astrophysics Data System (ADS)

Zhang, Rongzhu; Lai, Liping

2016-10-01

The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

NASA Astrophysics Data System (ADS)

Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

2017-11-01

An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed.

High-productivity DRIE solutions for 3D-SiP and MEMS volume manufacturing

NASA Astrophysics Data System (ADS)

Puech, M.; Thevenoud, J. M.; Launay, N.; Arnal, N.; Godinat, P.; Andrieu, B.; Gruffat, J. M.

2006-12-01

Emerging 3D-SiP technologies and high volume MEMS applications require high productivity mass production DRIE systems. The Alcatel DRIE product range has recently been optimized to reach the highest process and hardware production performances. A study based on sub-micron high aspect ratio structures encountered in the most stringent 3D-SiP has been carried out. The optimization of the Bosch process parameters have shown ultra high silicon etch rate, with unrivaled uniformity and repeatability leading to excellent process yields. In parallel, most recent hardware and proprietary design optimization including vacuum pumping lines, process chamber, wafer chucks, pressure control system, gas delivery are discussed. A key factor for achieving the highest performances was the recognized expertise of Alcatel vacuum and plasma science technologies. These improvements have been monitored in a mass production environment for a mobile phone application. Field data analysis shows a significant reduction of cost of ownership thanks to increased throughput and much lower running costs. These benefits are now available for all 3D-SiP and high volume MEMS applications. The typical etched patterns include tapered trenches for CMOS imagers, through silicon via holes for die stacking, well controlled profile angle for 3D high precision inertial sensors, and large exposed area features for inkjet printer head and Silicon microphones.

Modeling methods of MEMS micro-speaker with electrostatic working principle

NASA Astrophysics Data System (ADS)

Tumpold, D.; Kaltenbacher, M.; Glacer, C.; Nawaz, M.; Dehé, A.

2013-05-01

The market for mobile devices like tablets, laptops or mobile phones is increasing rapidly. Device housings get thinner and energy efficiency is more and more important. Micro-Electro-Mechanical-System (MEMS) loudspeakers, fabricated in complementary metal oxide semiconductor (CMOS) compatible technology merge energy efficient driving technology with cost economical fabrication processes. In most cases, the fabrication of such devices within the design process is a lengthy and costly task. Therefore, the need for computer modeling tools capable of precisely simulating the multi-field interactions is increasing. The accurate modeling of such MEMS devices results in a system of coupled partial differential equations (PDEs) describing the interaction between the electric, mechanical and acoustic field. For the efficient and accurate solution we apply the Finite Element (FE) method. Thereby, we fully take the nonlinear effects into account: electrostatic force, charged moving body (loaded membrane) in an electric field, geometric nonlinearities and mechanical contact during the snap-in case between loaded membrane and stator. To efficiently handle the coupling between the mechanical and acoustic fields, we apply Mortar FE techniques, which allow different grid sizes along the coupling interface. Furthermore, we present a recently developed PML (Perfectly Matched Layer) technique, which allows limiting the acoustic computational domain even in the near field without getting spurious reflections. For computations towards the acoustic far field we us a Kirchhoff Helmholtz integral (e.g, to compute the directivity pattern). We will present simulations of a MEMS speaker system based on a single sided driving mechanism as well as an outlook on MEMS speakers using double stator systems (pull-pull-system), and discuss their efficiency (SPL) and quality (THD) towards the generated acoustic sound.

Application of sub-micrometer patterned permalloy thin film in tunable radio frequency inductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, B.M. Farid; Divan, Ralu; Rosenmann, Daniel

Electrical tunable meander line inductor using coplanar waveguide structures with patterned permalloy (Py) thin film has been designed and implemented in this paper. High resistivity Si substrate is used to reduce the dielectric loss from the substrate. Inductor is implemented with a 60 nm thick Py deposited and patterned on top of the gold meander line, and Py film is patterned with dimension of 440 nm 10 lm to create the shape anisotropy field, which in turn increases the FMR frequency. Compared to a regular meanderline inductor without the application of sub-micrometer patterned Py thin film, the inductance density hasmore » been increased to 20% for the implemented inductor with patterned Py. Measured FMR frequency of the patterned Py is 4.51 GHz without the application of any external magnetic field. This has enabled the inductor application in the practical circuit boards, where the large external magnet is unavailable. Inductance tunability of the implemented inductor is demonstrated by applying a DC current. Applied DC current creates a magnetic field along the hard axis of the patterned Py thin film, which changes the magnetic moment of the thin film and thus, decreases the inductance of the line. Measured results show that the inductance density of the inductor can be varied 5% by applying 300 mA DC current, larger inductance tunability is achievable by increasing the thickness of Py film. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4918766]« less

PAM-4 Signaling over VCSELs with 0.13µm CMOS Chip Technology

NASA Astrophysics Data System (ADS)

Cunningham, J. E.; Beckman, D.; Zheng, Xuezhe; Huang, Dawei; Sze, T.; Krishnamoorthy, A. V.

2006-12-01

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13µm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM 4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

PAM-4 Signaling over VCSELs with 0.13microm CMOS Chip Technology.

PubMed

Cunningham, J E; Beckman, D; Zheng, Xuezhe; Huang, Dawei; Sze, T; Krishnamoorthy, A V

2006-12-11

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13microm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM-4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

Cost Optimal Design of a Power Inductor by Sequential Gradient Search

NASA Astrophysics Data System (ADS)

Basak, Raju; Das, Arabinda; Sanyal, Amarnath

2018-05-01

Power inductors are used for compensating VAR generated by long EHV transmission lines and in electronic circuits. For the EHV-lines, the rating of the inductor is decided upon by techno-economic considerations on the basis of the line-susceptance. It is a high voltage high current device, absorbing little active power and large reactive power. The cost is quite high- hence the design should be made cost-optimally. The 3-phase power inductor is similar in construction to a 3-phase core-type transformer with the exception that it has only one winding per phase and each limb is provided with an air-gap, the length of which is decided upon by the inductance required. In this paper, a design methodology based on sequential gradient search technique and the corresponding algorithm leading to cost-optimal design of a 3-phase EHV power inductor has been presented. The case-study has been made on a 220 kV long line of NHPC running from Chukha HPS to Birpara of Coochbihar.

RF performances of inductors integrated on localized p+-type porous silicon regions

PubMed Central

2012-01-01

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate. PMID:23009746

Monolithic Cylindrical Fused Silica Resonators with High Q Factors

PubMed Central

Pan, Yao; Wang, Dongya; Wang, Yanyan; Liu, Jianping; Wu, Suyong; Qu, Tianliang; Yang, Kaiyong; Luo, Hui

2016-01-01

The cylindrical resonator gyroscope (CRG) is a typical Coriolis vibratory gyroscope whose performance is determined by the Q factor and frequency mismatch of the cylindrical resonator. Enhancing the Q factor is crucial for improving the rate sensitivity and noise performance of the CRG. In this paper, for the first time, a monolithic cylindrical fused silica resonator with a Q factor approaching 8 × 105 (ring-down time over 1 min) is reported. The resonator is made of fused silica with low internal friction and high isotropy, with a diameter of 25 mm and a center frequency of 3974.35 Hz. The structure of the resonator is first briefly introduced, and then the experimental non-contact characterization method is presented. In addition, the post-fabrication experimental procedure of Q factor improvement, including chemical and thermal treatment, is demonstrated. The Q factor improvement by both treatments is compared and the primary loss mechanism is analyzed. To the best of our knowledge, the work presented in this paper represents the highest reported Q factor for a cylindrical resonator. The proposed monolithic cylindrical fused silica resonator may enable high performance inertial sensing with standard manufacturing process and simple post-fabrication treatment. PMID:27483263

Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

NASA Technical Reports Server (NTRS)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

Internal friction Q factor measurements in lunar rocks

NASA Technical Reports Server (NTRS)

Tittmann, B. R.

1977-01-01

Investigations to aid in the interpretation of seismic data obtained below the lunar surface are reported. Fine grained basalt with about 1.0% open core porosity was encapsulated under hard vacuum and measured. A Q value just under 2,000 at 0.5 kbar was achieved for a terrestrial analog of lunar basalt. In contrast to the modulus which increases by as much as 10%, the quality factor Q shows little or no change with pressure (a well outgassed sample maintains a high Q, whereas one exposed to laboratory atmosphere maintains a low Q). This result suggests that the absence of volatiles plays an important role in determining the q factor even at a depth of 10 km below the lunar surface.

A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations.

PubMed

Tsai, Tsung-Heng; Tsai, Hao-Cheng; Wu, Tien-Keng

2014-10-01

This paper presents a capacitive tactile sensor fabricated in a standard CMOS process. Both of the sensor and readout circuits are integrated on a single chip by a TSMC 0.35 μm CMOS MEMS technology. In order to improve the sensitivity, a T-shaped protrusion is proposed and implemented. This sensor comprises the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few post-processing steps. By a nano-indenter, the measured spring constant of the T-shaped structure is 2.19 kNewton/m. Fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction are utilized to compensate process variations and improve the accuracy of the readout circuits. The measured displacement-to-voltage transductance is 7.15 mV/nm, and the sensitivity is 3.26 mV/μNewton. The overall power dissipation is 132.8 μW.

Selected papers from the 12th International Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2012) (Atlanta, GA, USA, 2-5 December 2012)

NASA Astrophysics Data System (ADS)

Allen, Mark G.; Lang, Jeffrey

2013-11-01

Welcome to this special section of the Journal of Micromechanics and Microengineering (JMM). This section, co-edited by myself and by Professor Jeffrey Lang of the Massachusetts Institute of Technology, contains expanded versions of selected papers presented at the Power MEMS meeting held in Atlanta, GA, USA, in December of 2012. Professor Lang and I had the privilege of co-chairing Power MEMS 2012, the 12th International Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications. The scope of the PowerMEMS series of workshops ranges from basic principles, to materials and fabrication, to devices and systems, to applications. The many applications of power MEMS (microelectromehcanical systems) range from MEMS-enabled energy harvesting, storage, conversion and conditioning, to integrated systems that manage these processes. Why is the power MEMS field growing in importance? Smaller-scale power and power supplies (microwatts to tens of watts) are gaining in prominence due to many factors, including the ubiquity of low power portable electronic equipment and the proliferation of wireless sensor nodes that require extraction of energy from their embedding environment in order to function. MEMS manufacturing methods can be utilized to improve the performance of traditional power supply elements, such as allowing batteries to charge faster or shrinking the physical size of passive elements in small-scale power supplies. MEMS technologies can be used to fabricate energy harvesters that extract energy from an embedding environment to power wireless sensor nodes, in-body medical implants and other devices, in which the harvesters are on the small scales that are appropriately matched to the overall size of these microsystems. MEMS can enable the manufacturing of energy storage elements from nontraditional materials by bringing appropriate structure and surface morphology to these materials as well as fabricating the electrical interfaces

A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators

NASA Astrophysics Data System (ADS)

Zhao, Jicong; Yuan, Quan; Kan, Xiao; Yang, Jinling; Yang, Fuhua

2017-01-01

This paper presents a wafer-level three-dimensional (3D) vacuum packaging technique for radio frequency microelectromechanical systems (RF MEMS) resonators. A Sn-rich Au-Sn solder bonding is employed to provide a vacuum encapsulation as well as electrical conductions. Vertical silicon vias are micro-fabricated by glass reflow process. The optimized grounding, via pitch, and all-round shielding effectively reduce feed-through capacitance. Thus the signal-to-background ratios (SBRs) of the transmission signals increase from 17 dB to 20 dB, and the quality factor (Q) values of the packaged resonators go from around 8000 up to more than 9500. The measured average leak rate and shear strength are (2.55  ±  0.9)  ×  10-8 atm-cc s-1 and 42.53  ±  4.19 MPa, respectively. Furthermore, thermal cycling test between  -40 °C and 100 °C and high temperature storage test at 150 °C show that the resonant-frequency drifts are less than  ±7 ppm. In addition, the SBRs and the Q values have no obvious change after the tests. The experimental results demonstrated that the proposed encapsulation technique is well suited for the applications of RF MEMS devices.

Setting new standards in MEMS

NASA Astrophysics Data System (ADS)

Rimskog, Magnus; O'Loughlin, Brian J.

2007-02-01

Silex Microsystems handles a wide range of customized MEMS components. This speech will be describing Silex's MEMS foundry work model for providing customized solutions based on MEMS in a cost effective and well controlled manner. Factors for success are the capabilities to reformulate a customer product concept to manufacturing processes in the wafer fab, using standard process modules and production equipment. A well-controlled system increases the likelihood of a first batch success and enables fast ramp-up into volume production. The following success factors can be listed: strong enduring relationships with the customers; highly qualified well-experienced specialists working close with the customer; process solutions and building blocks ready to use out of a library; addressing manufacturing issues in the early design phase; in-house know how to meet demands for volume manufacturing; access to a wafer fab with high capacity, good organization, high availability of equipment, and short lead times; process development done in the manufacturing environment using production equipment for easy ramp-up to volume production. The article covers a method of working to address these factors: to have a long and enduring relationships with customers utilizing MEMS expertise and working close with customers, to translate their product ideas to MEMS components; to have stable process solutions for features such as Low ohmic vias, Spiked electrodes, Cantilevers, Silicon optical mirrors, Micro needles, etc, which can be used and modified for the customer needs; to use a structured development and design methodology in order to handle hundreds of process modules, and setting up standard run sheets. It is also very important to do real time process development in the manufacturing line. It minimizes the lead-time for the ramp-up of production; to have access to a state of the art Wafer Fab which is well organized, controlled and flexible, with high capacity and short lead

Complete passive vibration suppression using multi-layered piezoelectric element, inductor, and resistor

NASA Astrophysics Data System (ADS)

Yamada, Keisuke

2017-01-01

This paper describes passive technique for suppressing vibration in flexible structures using a multi-layered piezoelectric element, an inductor, and a resistor. The objective of using a multi-layered piezoelectric element is to increase its capacitance. A piezoelectric element with a large capacitance value does not require an active electrical circuit to simulate an inductor with a large inductance value. The effect of multi-layering of piezoelectric elements was theoretically analyzed through an equivalent transformation of a multi-layered piezoelectric element into a single-layered piezoelectric element. The governing equations were derived using this equivalent transformation. The effect of the resistances of the inductor and piezoelectric elements were considered because the sum of these resistances may exceed the optimum resistance. The performance of the passive vibration suppression using an LR circuit was compared to that of the method where a resistive circuit is used assuming that the sum of the resistances of the inductor and piezoelectric elements exceeds the optimum resistance. The effectiveness of the proposed method and theoretical analysis was verified through simulations and experiments.

MicroElectroMechanical devices and fabrication technologies for radio-frequency analog signal processing

NASA Astrophysics Data System (ADS)

Young, Darrin Jun

The proliferation of wireless services creates a pressing need for compact and low cost RF transceivers. Modern sub-micron technologies provide the active components needed for miniaturization but fail to deliver high quality passives needed in oscillators and filters. This dissertation demonstrates procedures for adding high quality inductors and tunable capacitors to a standard silicon integrated circuits. Several voltage-controlled oscillators operating in the low Giga-Hertz range demonstrate the suitability of these components for high performance RF building blocks. Two low-temperature processes are described to add inductors and capacitors to silicon ICs. A 3-D coil geometry is used for the inductors rather than the conventional planar spiral to substantially reduce substrate loss and hence improve the quality factor and self-resonant frequency. Measured Q-factors at 1 GHz are 30 for a 4.8 nH device, 16 for 8.2 nH and 13.8 nH inductors. Several enhancements are proposed that are expected to result in a further improvement of the achievable Q-factor. This research investigates the design and fabrication of silicon-based IC-compatible high-Q tunable capacitors and inductors. The goal of this investigation is to develop a monolithic low phase noise radio-frequency voltage-controlled oscillator using these high-performance passive components for wireless communication applications. Monolithic VCOs will help the miniaturization of current radio transceivers, which offers a potential solution to achieve a single hand-held wireless phone with multistandard capabilities. IC-compatible micromachining fabrication technologies have been developed to realize on-chip high-Q RF tunable capacitors and 3-D coil inductors. The capacitors achieve a nominal capacitance value of 2 pF and can be tuned over 15% with 3 V. A quality factor over 60 has been measured at 1 GHz. 3-D coil inductors obtain values of 4.8 nH, 8.2 nH and 13.8 nH. At 1 GHz a Q factor of 30 has been achieved

Q-Type Factor Analysis of Healthy Aged Men.

ERIC Educational Resources Information Center

Kleban, Morton H.

Q-type factor analysis was used to re-analyze baseline data collected in 1957, on 47 men aged 65-91. Q-type analysis is the use of factor methods to study persons rather than tests. Although 550 variables were originally studied involving psychiatry, medicine, cerebral metabolism and chemistry, personality, audiometry, dichotic and diotic memory,…

Two-dimensional (2D) displacement measurement of moving objects using a new MEMS binocular vision system

NASA Astrophysics Data System (ADS)

Di, Si; Lin, Hui; Du, Ruxu

2011-05-01

Displacement measurement of moving objects is one of the most important issues in the field of computer vision. This paper introduces a new binocular vision system (BVS) based on micro-electro-mechanical system (MEMS) technology. The eyes of the system are two microlenses fabricated on a substrate by MEMS technology. The imaging results of two microlenses are collected by one complementary metal-oxide-semiconductor (CMOS) array. An algorithm is developed for computing the displacement. Experimental results show that as long as the object is moving in two-dimensional (2D) space, the system can effectively estimate the 2D displacement without camera calibration. It is also shown that the average error of the displacement measurement is about 3.5% at different object distances ranging from 10 cm to 35 cm. Because of its low cost, small size and simple setting, this new method is particularly suitable for 2D displacement measurement applications such as vision-based electronics assembly and biomedical cell culture.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, James; Gunawan, Ferry; Dosluoglu, Taner; Tower, John; McCaffrey, Niel

2002-08-01

High performance CMOS pixels are introduced; and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantagesof these options for scientific CMOS pixels are examined.Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, J.; Gunawan, F.; Dosluoglu, T.; Tower, J.; McCaffrey, N.

High performance CMOS pixels are introduced and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantages of these options for scientific CMOS pixels are examined. Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

NASA Astrophysics Data System (ADS)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

PubMed Central

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-01-01

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/Hz at 50 kHz, which corresponds to 100 μg/Hz. PMID:28042830

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

PubMed

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

A wave shaping approach of ferrite inductors exhibiting hysteresis using orthogonal field bias

NASA Astrophysics Data System (ADS)

Adly, A. A.; Abd-El-Hafiz, S. K.; Mahgoub, A. O.

2018-05-01

Advances in power electronic systems have considerably contributed to a wide spectrum of applications. In most power electronic circuits, inductors play crucial functions. Utilization of ferrite cores becomes a must when large inductances are required. Nevertheless, this results in an additional complexity due to their hysteresis nature. Recently, an efficient approach for modeling vector hysteresis using tri-node Hopfield neural networks (HNNs) has been introduced. This paper presents a wave shaping approach using hollow cylindrical ferrite core inductors having axial and toroidal windings. The approach investigates the possibility of tuning the inductor permeability to minimize circuit harmonics. Details of the approach are given in the paper.

Design of active temperature compensated composite free-free beam MEMS resonators in a standard process

NASA Astrophysics Data System (ADS)

Xereas, George; Chodavarapu, Vamsy P.

2014-03-01

Frequency references are used in almost every modern electronic device including mobile phones, personal computers, and scientific and medical instrumentation. With modern consumer mobile devices imposing stringent requirements of low cost, low complexity, compact system integration and low power consumption, there has been significant interest to develop batch-manufactured MEMS resonators. An important challenge for MEMS resonators is to match the frequency and temperature stability of quartz resonators. We present 1MHz and 20MHz temperature compensated Free-Free beam MEMS resonators developed using PolyMUMPS, which is a commercial multi-user process available from MEMSCAP. We introduce a novel temperature compensation technique that enables high frequency stability over a wide temperature range. We used three strategies: passive compensation by using a structural gold (Au) layer on the resonator, active compensation through using a heater element, and a Free-Free beam design that minimizes the effects of thermal mismatch between the vibrating structure and the substrate. Detailed electro-mechanical simulations were performed to evaluate the frequency response and Quality Factor (Q). Specifically, for the 20MHz device, a Q of 10,000 was obtained for the passive compensated design. Finite Element Modeling (FEM) simulations were used to evaluate the Temperature Coefficient of frequency (TCf) of the resonators between -50°C and 125°C which yielded +0.638 ppm/°C for the active compensated, compared to -1.66 ppm/°C for the passively compensated design and -8.48 ppm/°C for uncompensated design for the 20MHz device. Electro-thermo-mechanical simulations showed that the heater element was capable of increasing the temperature of the resonators by approximately 53°C with an applied voltage of 10V and power consumption of 8.42 mW.

Characteristics of the boat inductor for keeping liquid metal in the suspended state

NASA Technical Reports Server (NTRS)

Fogel, A. A.; Siforova, T. A.; Mezdrogina, M. M.

1985-01-01

Characteristics of the boat inductor for keeping liquid metal in the suspended state are examined. Behavioral features of the liquid metal, and the suspension boundary of liquid metal in the lower position are discussed. It is concluded that the inductor can be used to crystallize metals in the suspended state.

Setting the Delay of the LTD Switch Firing Using Trigger Inductors

NASA Astrophysics Data System (ADS)

Alexeenko, V. M.; Sinebryukhov, V. A.; Kondratiev, S. S.; Volkov, S. N.; Kim, A. A.; Yakovlev, V. Yu.

2018-01-01

Simulation results are compared with experimental data to define the integral breakdown criterion for the spark gaps of the switches of the LTDs with oil insulation and to determine the influence of the inductance of the trigger inductor on the delay of the switch firing. The results confirm that the shape of the output square pulse produced by the oil-insulated LTDs can be corrected as required if the trigger inductors are used to trigger the cavity switches.

Using BMDP and SPSS for a Q factor analysis.

PubMed

Tanner, B A; Koning, S M

1980-12-01

While Euclidean distances and Q factor analysis may sometimes be preferred to correlation coefficients and cluster analysis for developing a typology, commercially available software does not always facilitate their use. Commands are provided for using BMDP and SPSS in a Q factor analysis with Euclidean distances.

Measured and Monte Carlo calculated k{sub Q} factors: Accuracy and comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muir, B. R.; McEwen, M. R.; Rogers, D. W. O.

2011-08-15

Purpose: The journal Medical Physics recently published two papers that determine beam quality conversion factors, k{sub Q}, for large sets of ion chambers. In the first paper [McEwen Med. Phys. 37, 2179-2193 (2010)], k{sub Q} was determined experimentally, while the second paper [Muir and Rogers Med. Phys. 37, 5939-5950 (2010)] provides k{sub Q} factors calculated using Monte Carlo simulations. This work investigates a variety of additional consistency checks to verify the accuracy of the k{sub Q} factors determined in each publication and a comparison of the two data sets. Uncertainty introduced in calculated k{sub Q} factors by possible variation ofmore » W/e with beam energy is investigated further. Methods: The validity of the experimental set of k{sub Q} factors relies on the accuracy of the NE2571 reference chamber measurements to which k{sub Q} factors for all other ion chambers are correlated. The stability of NE2571 absorbed dose to water calibration coefficients is determined and comparison to other experimental k{sub Q} factors is analyzed. Reliability of Monte Carlo calculated k{sub Q} factors is assessed through comparison to other publications that provide Monte Carlo calculations of k{sub Q} as well as an analysis of the sleeve effect, the effect of cavity length and self-consistencies between graphite-walled Farmer-chambers. Comparison between the two data sets is given in terms of the percent difference between the k{sub Q} factors presented in both publications. Results: Monitoring of the absorbed dose calibration coefficients for the NE2571 chambers over a period of more than 15 yrs exhibit consistency at a level better than 0.1%. Agreement of the NE2571 k{sub Q} factors with a quadratic fit to all other experimental data from standards labs for the same chamber is observed within 0.3%. Monte Carlo calculated k{sub Q} factors are in good agreement with most other Monte Carlo calculated k{sub Q} factors. Expected results are observed for the

MEMS compatible illumination and imaging micro-optical systems

NASA Astrophysics Data System (ADS)

Bräuer, A.; Dannberg, P.; Duparré, J.; Höfer, B.; Schreiber, P.; Scholles, M.

2007-01-01

The development of new MOEMS demands for cooperation between researchers in micromechanics, optoelectronics and microoptics at a very early state. Additionally, microoptical technologies being compatible with structured silicon have to be developed. The microoptical technologies used for two silicon based microsystems are described in the paper. First, a very small scanning laser projector with a volume of less than 2 cm 3, which operates with a directly modulated lasers collimated with a microlens, is shown. The laser radiation illuminates a 2D-MEMS scanning mirror. The optical design is optimized for high resolution (VGA). Thermomechanical stability is realized by design and using a structured ceramics motherboard. Secondly, an ultrathin CMOS-camera having an insect inspired imaging system has been realized. It is the first experimental realization of an artificial compound eye. Micro-optical design principles and technology is used. The overall thickness of the imaging system is only 320 μm, the diagonal field of view is 21°, and the f-number is 2.6. The monolithic device consists of an UV-replicated microlens array upon a thin silica substrate with a pinhole array in a metal layer on the back side. The pitch of the pinholes differs from that of the lens array to provide individual viewing angle for each channel. The imaging chip is directly glued to a CMOS sensor with adapted pitch. The whole camera is less than 1mm thick. New packaging methods for these systems are under development.

Experiments with synchronized sCMOS cameras

NASA Astrophysics Data System (ADS)

Steele, Iain A.; Jermak, Helen; Copperwheat, Chris M.; Smith, Robert J.; Poshyachinda, Saran; Soonthorntham, Boonrucksar

2016-07-01

Scientific-CMOS (sCMOS) cameras can combine low noise with high readout speeds and do not suffer the charge multiplication noise that effectively reduces the quantum efficiency of electron multiplying CCDs by a factor 2. As such they have strong potential in fast photometry and polarimetry instrumentation. In this paper we describe the results of laboratory experiments using a pair of commercial off the shelf sCMOS cameras based around a 4 transistor per pixel architecture. In particular using a both stable and a pulsed light sources we evaluate the timing precision that may be obtained when the cameras readouts are synchronized either in software or electronically. We find that software synchronization can introduce an error of 200-msec. With electronic synchronization any error is below the limit ( 50-msec) of our simple measurement technique.

Construction and Initial Validation of the Multiracial Experiences Measure (MEM)

PubMed Central

Yoo, Hyung Chol; Jackson, Kelly; Guevarra, Rudy P.; Miller, Matthew J.; Harrington, Blair

2015-01-01

This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across two studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one’s social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. PMID:26460977

Construction and initial validation of the Multiracial Experiences Measure (MEM).

PubMed

Yoo, Hyung Chol; Jackson, Kelly F; Guevarra, Rudy P; Miller, Matthew J; Harrington, Blair

2016-03-01

This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across 2 studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one's social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. (c) 2016 APA, all rights reserved).

High Productivity DRIE solutions for 3D-SiP and MEMS Volume Manufacturing

NASA Astrophysics Data System (ADS)

Puech, M.; Thevenoud, JM; Launay, N.; Arnal, N.; Godinat, P.; Andrieu, B.; Gruffat, JM

2006-04-01

Emerging 3D-SiP technologies and high volume MEMS applications require high productivity mass production DRIE systems. The Alcatel DRIE product range has recently been optimised to reach the highest process and hardware production performances. A study based on sub-micron high aspect ratio structures encountered in the most stringent 3D-SiP has been carried out. The optimization of the Bosch process parameters has resulted in ultra high silicon etch rates, with unrivalled uniformity and repeatability leading to excellent process. In parallel, most recent hardware and proprietary design optimization including vacuum pumping lines, process chamber, wafer chucks, pressure control system, gas delivery are discussed. These improvements have been monitored in a mass production environment for a mobile phone application. Field data analysis shows a significant reduction of cost of ownership thanks to increased throughput and much lower running costs. These benefits are now available for all 3D-SiP and high volume MEMS applications. The typical etched patterns include tapered trenches for CMOS imagers, through silicon via holes for die stacking, well controlled profile angle for 3D high precision inertial sensors, and large exposed area features for inkjet printer heads and Silicon microphones.

Integration of planar transformer and/or planar inductor with power switches in power converter

DOEpatents

Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

2007-10-30

A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

Development of CMOS MEMS inductive type tactile sensor with the integration of chrome steel ball force interface

NASA Astrophysics Data System (ADS)

Yeh, Sheng-Kai; Chang, Heng-Chung; Fang, Weileun

2018-04-01

This study presents an inductive tactile sensor with a chrome steel ball sensing interface based on the commercially available standard complementary metal-oxide-semiconductor (CMOS) process (the TSMC 0.18 µm 1P6M CMOS process). The tactile senor has a deformable polymer layer as the spring of the device and no fragile suspended thin film structures are required. As a tactile force is applied on the chrome steel ball, the polymer would deform. The distance between the chrome steel ball and the sensing coil would changed. Thus, the tactile force can be detected by the inductance change of the sensing coil. In short, the chrome steel ball acts as a tactile bump as well as the sensing interface. Experimental results show that the proposed inductive tactile sensor has a sensing range of 0-1.4 N with a sensitivity of 9.22(%/N) and nonlinearity of 2%. Preliminary wireless sensing test is also demonstrated. Moreover, the influence of the process and material issues on the sensor performances have also been investigated.

EDITORIAL: International MEMS Conference 2006

NASA Astrophysics Data System (ADS)

Tay, Francis E. H.; Jianmin, Miao; Iliescu, Ciprian

2006-04-01

The International MEMS conference (iMEMS2006) organized by the Institute of Bioengineering and Nanotechnology and Nanyang Technological University aims to provide a platform for academicians, professionals and industrialists in various related fields from all over the world to share and learn from each other. Of great interest is the incorporation of the theme of life sciences application using MEMS. It is the desire of this conference to initiate collaboration and form network of cooperation. This has continued to be the objective of iMEMS since its inception in 1997. The technological advance of MEMS over the past few decades has been truly exciting in terms of development and applications. In order to participate in this rapid development, a conference involving delegates from within the MEMS community and outside the community is very meaningful and timely. With the receipt of over 200 articles, delegates related to MEMS field from all over the world will share their perspectives on topics such as MEMS/MST Design, MEMS Teaching and Education, MEMS/MST Packaging, MEMS/MST Fabrication, Microsystems Applications, System Integration, Wearable Devices, MEMSWear and BioMEMS. Invited speakers and delegates from outside the field have also been involved to provide challenges, especially in the life sciences field, for the MEMS community to potentially address. The proceedings of the conference will be published as an issue in the online Journal of Physics: Conference Series and this can reach a wider audience and will facilitate the reference and citation of the work presented in the conference. We wish to express our deep gratitude to the International Scientific Committee members and the organizing committee members for contributing to the success of this conference. We would like to thank all the delegates, speakers and sponsors from all over the world for presenting and sharing their perspectives on topics related to MEMS and the challenges that MEMS can

Integrated three-dimensional optical MEMS for chip-based fluorescence detection

NASA Astrophysics Data System (ADS)

Hung, Kuo-Yung; Tseng, Fan-Gang; Khoo, Hwa-Seng

2009-04-01

This paper presents a novel fluorescence sensing chip for parallel protein microarray detection in the context of a 3-in-1 protein chip system. This portable microchip consists of a monolithic integration of CMOS-based avalanche photo diodes (APDs) combined with a polymer micro-lens, a set of three-dimensional (3D) inclined mirrors for separating adjacent light signals and a low-noise transformer-free dc-dc boost mini-circuit to power the APDs (ripple below 1.28 mV, 0-5 V input, 142 V and 12 mA output). We fabricated our APDs using the planar CMOS process so as to facilitate the post-CMOS integration of optical MEMS components such as the lenses. The APD arrays were arranged in unique circular patterns appropriate for detecting the specific fluorescently labelled protein spots in our study. The array-type APDs were designed so as to compensate for any alignment error as detected by a positional error signal algorithm. The condenser lens was used as a structure for light collection to enhance the fluorescent signals by about 25%. This element also helped to reduce the light loss due to surface absorption. We fabricated an inclined mirror to separate two adjacent fluorescent signals from different specimens. Excitation using evanescent waves helped reduce the interference of the excitation light source. This approach also reduced the number of required optical lenses and minimized the complexity of the structural design. We achieved detection floors for anti-rabbit IgG and Cy5 fluorescent dye as low as 0.5 ng/µl (~3.268 nM). We argue that the intrinsic nature of point-to-point and batch-detection methods as showcased in our chip offers advantages over the serial-scanning approach used in traditional scanner systems. In addition, our system is low cost and lightweight.

A novel approach to the analysis of squeezed-film air damping in microelectromechanical systems

NASA Astrophysics Data System (ADS)

Yang, Weilin; Li, Hongxia; Chatterjee, Aveek N.; Elfadel, Ibrahim (Abe M.; Ender Ocak, Ilker; Zhang, TieJun

2017-01-01

Squeezed-film damping (SFD) is a phenomenon that significantly affects the performance of micro-electro-mechanical systems (MEMS). The total damping force in MEMS mainly include the viscous damping force and elastic damping force. Quality factor (Q factor) is usually used to evaluate the damping in MEMS. In this work, we measure the Q factor of a resonator through experiments in a wide range of pressure levels. In fact, experimental characterizations of MEMS have some limitations because it is difficult to conduct experiments at very high vacuum and also hard to differentiate the damping mechanisms from the overall Q factor measurements. On the other hand, classical theoretical analysis of SFD is restricted to strong assumptions and simple geometries. In this paper, a novel numerical approach, which is based on lattice Boltzmann simulations, is proposed to investigate SFD in MEMS. Our method considers the dynamics of squeezed air flow as well as fluid-solid interactions in MEMS. It is demonstrated that Q factor can be directly predicted by numerical simulation, and our simulation results agree well with experimental data. Factors that influence SFD, such as pressure, oscillating amplitude, and driving frequency, are investigated separately. Furthermore, viscous damping and elastic damping forces are quantitatively compared based on comprehensive simulation. The proposed numerical approach as well as experimental characterization enables us to reveal the insightful physics of squeezed-film air damping in MEMS.

Power converter using near-load output capacitance, direct inductor contact, and/or remote current sense

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coteus, Paul W.; Ferencz, Andrew; Hall, Shawn A.

An apparatus includes a first circuit board including first components including a load, and a second circuit board including second components including switching power devices and an output inductor. Ground and output voltage contacts between the circuit boards are made through soldered or connectorized interfaces. Certain components on the first circuit board and certain components, including the output inductor, on the second circuit board act as a DC-DC voltage converter for the load. An output capacitance for the conversion is on the first circuit board with no board-to-board interface between the output capacitance and the load. The inductance of themore » board-to-board interface functions as part of the output inductor's inductance and not as a parasitic inductance. Sense components for sensing current through the output inductor are located on the first circuit board. Parasitic inductance of the board-to-board interface has less effect on a sense signal provided to a controller.« less

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

PubMed Central

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-01-01

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. PMID:26184222

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

PubMed

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-07-14

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Novel MSVPWM to reduce the inductor current ripple for Z-source inverter in electric vehicle applications.

PubMed

Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

2014-01-01

A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results.

Novel MSVPWM to Reduce the Inductor Current Ripple for Z-Source Inverter in Electric Vehicle Applications

PubMed Central

Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

2014-01-01

A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results. PMID:24883412

Development of optical MEMS CO2 sensors

NASA Astrophysics Data System (ADS)

McNeal, Mark P.; Moelders, Nicholas; Pralle, Martin U.; Puscasu, Irina; Last, Lisa; Ho, William; Greenwald, Anton C.; Daly, James T.; Johnson, Edward A.; George, Thomas

2002-09-01

Inexpensive optical MEMS gas and chemical sensors offer chip-level solutions to environmental monitoring, industrial health and safety, indoor air quality, and automobile exhaust emissions monitoring. Previously, Ion Optics, Inc. reported on a new design concept exploiting Si-based suspended micro-bridge structures. The devices are fabricated using conventional CMOS compatible processes. The use of photonic bandgap (PBG) crystals enables narrow band IR emission for high chemical selectivity and sensitivity. Spectral tuning was accomplished by controlling symmetry and lattice spacing of the PBG structures. IR spectroscopic studies were used to characterize transmission, absorption and emission spectra in the 2 to 20 micrometers wavelength range. Prototype designs explored suspension architectures and filament geometries. Device characterization studies measured drive and emission power, temperature uniformity, and black body detectivity. Gas detection was achieved using non-dispersive infrared (NDIR) spectroscopic techniques, whereby target gas species were determined from comparison to referenced spectra. A sensor system employing the emitter/detector sensor-chip with gas cell and reflective optics is demonstrated and CO2 gas sensitivity limits are reported.

Laser Vision Correction with Q Factor Modification for Keratoconus Management.

PubMed

Pahuja, Natasha Kishore; Shetty, Rohit; Sinha Roy, Abhijit; Thakkar, Maithil Mukesh; Jayadev, Chaitra; Nuijts, Rudy Mma; Nagaraja, Harsha

2017-04-01

To evaluate the outcomes of corneal laser ablation with Q factor modification for vision correction in patients with progressive keratoconus. In this prospective study, 50 eyes of 50 patients were divided into two groups based on Q factor (>-1 in Group I and ≤-1 in Group II). All patients underwent a detailed ophthalmic examination including uncorrected distance visual acuity (UDVA), corrected distance visual acuity (CDVA), subjective acceptance and corneal topography using the Pentacam. The topolyzer was used to measure the corneal asphericity (Q). Ablation was performed based on the preoperative Q values and thinnest pachymetry to obtain a target of near normal Q. This was followed by corneal collagen crosslinking to stabilize the progression. Statistically significant improvement (p ≤ 0.05) was noticed in refractive, topographic, and Q values posttreatment in both groups. The improvement in higher-order aberrations and total aberrations were statistically significant in both groups; however, the spherical aberration showed statistically significant improvement only in Group II. Ablation based on the preoperative Q and pachymetry for a near normal postoperative Q value appears to be an effective method to improve the visual acuity and quality in patients with keratoconus.

Converting MEMS technology into profits

NASA Astrophysics Data System (ADS)

Bryzek, Janusz

1998-08-01

This paper discusses issues related to transitioning a company from the advanced technology development phase (with a particular focus on MEMS) to a profitable business, with emphasis on start-up companies. It includes several case studies from (primarily) NovaSensor MEMS development history. These case studies illustrate strategic problems with which advanced MEMS technology developers have to be concerned. Conclusions from these case studies could be used as checkpoints for future MEMS developers to increase probability of profitable operations. The objective for this paper is to share the author's experience from multiple MEMS start-ups to accelerate development of the MEMS market by focusing state- of-the-art technologists on marketing issues.

Simultaneous excitation of extremely high-Q-factor trapped and octupolar modes in terahertz metamaterials.

PubMed

Yang, Shengyan; Tang, Chengchun; Liu, Zhe; Wang, Bo; Wang, Chun; Li, Junjie; Wang, Li; Gu, Changzhi

2017-07-10

Achieving high-Q-factor resonances allows dramatic enhancement of performance of many plasmonic devices. However, the excitation of high-Q-factor resonance, especially multiple high-Q-factor resonances, has been a big challenge in traditional metamaterials due to the ohmic and radiation losses. Here, we experimentally demonstrate simultaneous excitation of double extremely sharp resonances in a terahertz metamaterial composed of mirror-symmetric-broken double split ring resonators (MBDSRRs). In a regular mirror-arranged SRR array, only the low-Q-factor dipole resonance can be excited with the external electric field perpendicular to the SRR gap. Breaking the mirror-symmetry of the metamaterial leads to the occurrence of two distinct otherwise inaccessible ultrahigh-Q-factor modes, which consists of one trapped mode in addition to an octupolar mode. By tuning the asymmetry parameter, the Q factor of the trapped mode can be linearly modulated, while the Q factor of the octupolar mode can be tailored exponentially. For specific degree of asymmetry, our simulations revealed a significantly high Q factor (Q>100) for the octupolar mode, which is more than one order of magnitude larger than that of conventional metamaterials. The mirror-symmetry-broken metamaterial offers the advantage of enabling access to two distinct high-Q-factor resonances which could be exploited for ultrasensitive sensors, multiband filters, and slow light devices.

An Integrated Thermal Compensation System for MEMS Inertial Sensors

PubMed Central

Chiu, Sheng-Ren; Teng, Li-Tao; Chao, Jen-Wei; Sue, Chung-Yang; Lin, Chih-Hsiou; Chen, Hong-Ren; Su, Yan-Kuin

2014-01-01

An active thermal compensation system for a low temperature-bias-drift (TBD) MEMS-based gyroscope is proposed in this study. First, a micro-gyroscope is fabricated by a high-aspect-ratio silicon-on-glass (SOG) process and vacuum packaged by glass frit bonding. Moreover, a drive/readout ASIC, implemented by the 0.25 μm 1P5M standard CMOS process, is designed and integrated with the gyroscope by directly wire bonding. Then, since the temperature effect is one of the critical issues in the high performance gyroscope applications, the temperature-dependent characteristics of the micro-gyroscope are discussed. Furthermore, to compensate the TBD of the micro-gyroscope, a thermal compensation system is proposed and integrated in the aforementioned ASIC to actively tune the parameters in the digital trimming mechanism, which is designed in the readout ASIC. Finally, some experimental results demonstrate that the TBD of the micro-gyroscope can be compensated effectively by the proposed compensation system. PMID:24599191

Applications of Non-linearities in RF MEMS Switches and Resonators

NASA Astrophysics Data System (ADS)

Vummidi Murali, Krishna Prasad

The 21st century is emerging into an era of wireless ubiquity. To support this trend, the RF (Radio Frequency) front end must be capable of processing a range of wireless signals (cellular phone, data connectivity, broadcast TV, GPS positioning, etc.) spanning a total bandwidth of nearly 6 GHz. This warrants the need for multi-band/multi-mode radio architectures. For such architectures to satisfy the constraints on size, battery life, functionality and cost, the radio front-end must be made reconfigurable. RF-MEMS (RF Micro-Electro-Mechanical Systems) are seen as an enabling technology for such reconfigurable radios. RF-MEMS mainly include micromechanical switches (used in phase shifters, switched capacitor banks, impedance tuners etc.) and micromechanical resonators (used in tunable filters, oscillators, reference clocks etc.). MEMS technology also has the potential to be directly integrated into CMOS (Complementary metal-oxide semiconductor) ICs (Integrated Circuits) leading to further potential reductions of cost and size. However, RF-MEMS face challenges that must be addressed before they can gain widespread commercial acceptance. Relatively low switching speed, power handling, and high-voltage drive are some of the key issues in MEMS switches. Phase noise influenced by non-linearities, need for temperature compensation (especially Si based resonators), large start-up times, and aging are the key issues in Si MEMS Resonators. In this work potential solutions are proposed to address some of these key issues, specifically the reduction of high voltage drives in switches and the reduction of phase noise in MEMS resonators for timing applications. MEMS devices that are electrostatically actuated exhibit significant non-linearities. The origins of the non-linearities are both electrical (electrostatic actuation) and mechanical (dimensions and material properties). The influence of spring non-linearities (cubic and quadratic) on the performance of switches and

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

NASA Astrophysics Data System (ADS)

Zhang, Ying; Zhu, Hongbo; Zhang, Liang; Fu, Min

2016-09-01

The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q / C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.

Using a coupled inductor controlled by fuzzy logic to improve the efficiency of a Buck converter in a PV system

NASA Astrophysics Data System (ADS)

Abouchabana, Nabil; Haddadi, Mourad; Rabhi, Abdelhamid; El Hajjaji, Ahmed

2017-11-01

Photovoltaic generators (PVG) produce a variable power according to the solar radiation (G) and temperature (T). This variation affects the sizing of the components of DC / DC converters, powered by such PVG, and make it difficult. The effects may differ from one component to another. The main and critical one is presented by the inductor, the element that stores the energy during sampled periods. We propose in this work an auto-adaptation of these inductor values to maintain optimal performance of the power yield of these converters. Our idea is to replace the inductor by a coupled inductor where this adjustment is made by the addition of an adjustable electric field in the magnetic core. Low current intensities come from the PVG supply the second inductor of the coupled inductor through a circuit controlled by a fuzzy controller (FC). The whole system is modeled and simulated under MATLAB/SIMULINK for the control part of the system and under PSPICE for the power part of the system. The obtained results show good performances of the proposed converter over the standard one.

Development of an electrical model for integrated magnetic inductors

NASA Astrophysics Data System (ADS)

Bechir, M. B.; Yaya, D. D.; Youssouf, M. K.; Soultan, M.; Capraro, S.; Siblini, A.; Chatelon, J. P.; Rousseau, J. J.

2014-07-01

Nowadays, the current trend consists in the development of new technologies with the aim of reducing volume, weight as well as production cost. With the aim of decreasing occupied component area, it will be interesting to use magnetic materials to confine the fields. Therefore, our works concern the modelling and the characterization of magnetic planar inductors. The proposed model is detailed for inductors fabricated with one magnetic layer. The model can take into account, the capacitance between turns and the capacitance between the last turn and the ground plane, the magnetic permeability, the skin and proximity effects of the conductors according to the frequency. The structure of optimization developed to extract the parameters of the model will be presented. Results of extracted parameters are compared with the simulation parameters. A good correlation is observed on Y11 and Y12 parameters on all the broad band frequency.

Sparsity-optimized separation of body waves and ground-roll by constructing dictionaries using tunable Q-factor wavelet transforms with different Q-factors

NASA Astrophysics Data System (ADS)

Chen, Xin; Chen, Wenchao; Wang, Xiaokai; Wang, Wei

2017-10-01

Low-frequency oscillatory ground-roll is regarded as one of the main regular interference waves, which obscures primary reflections in land seismic data. Suppressing the ground-roll can reasonably improve the signal-to-noise ratio of seismic data. Conventional suppression methods, such as high-pass and various f-k filtering, usually cause waveform distortions and loss of body wave information because of their simple cut-off operation. In this study, a sparsity-optimized separation of body waves and ground-roll, which is based on morphological component analysis theory, is realized by constructing dictionaries using tunable Q-factor wavelet transforms with different Q-factors. Our separation model is grounded on the fact that the input seismic data are composed of low-oscillatory body waves and high-oscillatory ground-roll. Two different waveform dictionaries using a low Q-factor and a high Q-factor, respectively, are confirmed as able to sparsely represent each component based on their diverse morphologies. Thus, seismic data including body waves and ground-roll can be nonlinearly decomposed into low-oscillatory and high-oscillatory components. This is a new noise attenuation approach according to the oscillatory behaviour of the signal rather than the scale or frequency. We illustrate the method using both synthetic and field shot data. Compared with results from conventional high-pass and f-k filtering, the results of the proposed method prove this method to be effective and advantageous in preserving the waveform and bandwidth of reflections.

Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Ho-Young; Kang, In Man, E-mail: imkang@ee.knu.ac.kr; Shon, Chae-Hwa

2015-05-07

A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. Tomore » improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.« less

Quantitative evaluation of the accuracy and variance of individual pixels in a scientific CMOS (sCMOS) camera for computational imaging

NASA Astrophysics Data System (ADS)

Watanabe, Shigeo; Takahashi, Teruo; Bennett, Keith

2017-02-01

The"scientific" CMOS (sCMOS) camera architecture fundamentally differs from CCD and EMCCD cameras. In digital CCD and EMCCD cameras, conversion from charge to the digital output is generally through a single electronic chain, and the read noise and the conversion factor from photoelectrons to digital outputs are highly uniform for all pixels, although quantum efficiency may spatially vary. In CMOS cameras, the charge to voltage conversion is separate for each pixel and each column has independent amplifiers and analog-to-digital converters, in addition to possible pixel-to-pixel variation in quantum efficiency. The "raw" output from the CMOS image sensor includes pixel-to-pixel variability in the read noise, electronic gain, offset and dark current. Scientific camera manufacturers digitally compensate the raw signal from the CMOS image sensors to provide usable images. Statistical noise in images, unless properly modeled, can introduce errors in methods such as fluctuation correlation spectroscopy or computational imaging, for example, localization microscopy using maximum likelihood estimation. We measured the distributions and spatial maps of individual pixel offset, dark current, read noise, linearity, photoresponse non-uniformity and variance distributions of individual pixels for standard, off-the-shelf Hamamatsu ORCA-Flash4.0 V3 sCMOS cameras using highly uniform and controlled illumination conditions, from dark conditions to multiple low light levels between 20 to 1,000 photons / pixel per frame to higher light conditions. We further show that using pixel variance for flat field correction leads to errors in cameras with good factory calibration.

Development of a Self-Calibrated MEMS Gyrocompass for North-Finding and Tracking

NASA Astrophysics Data System (ADS)

Prikhodko, Igor P.

This Ph.D. dissertation presents development of a microelectromechanical (MEMS) gyrocompass for north-finding and north-tracking applications. The central part of this work enabling these applications is control and self-calibration architectures for drift mitigation over thermal environments, validated using a MEMS quadruple mass gyroscope. The thesis contributions are the following: • Adapted and implemented bias and scale-factor drifts compensation algorithm relying on temperature self-sensing for MEMS gyroscopes with high quality factors. The real-time self-compensation reduced a total bias error to 2 °/hr and a scale-factor error to 500 ppm over temperature range of 25 °C to 55 °C (on par with the state-of-the-art). • Adapted and implemented a scale-factor self-calibration algorithm previously employed for macroscale hemispherical resonator gyroscope to MEMS Coriolis vibratory gyroscopes. An accuracy of 100 ppm was demonstrated by simultaneously measuring the true and estimated scale-factors over temperature variations (on par with the state-of-the art). • Demonstrated north-finding accuracy satisfying a typical mission requirement of 4 meter target location error at 1 kilometer stand-off distance (on par with a GPS accuracy). Analyzed north-finding mechanizations trade-offs for MEMS vibratory gyroscopes and demonstrated measurements of the Earth's rotation (15 °/hr). • Demonstrated, for the first time, an angle measuring MEMS gyroscope operation for north-tracking applications in a +/-500 °/s rate range and 100 Hz bandwidth, eliminating both bandwidth and range constraints of conventional open-loop Coriolis vibratory gyroscopes. • Investigated hypothesis that surface-tension driven glass-blowing microfabrication can create highly spherical shells for 3-D MEMS. Without any trimming or tuning of the natural frequencies, a 1 MHz glass-blown 3-D microshell resonator demonstrated a 0.63 % frequency mismatch between two degenerate 4-node wineglass

MEMS for Practical Applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

Silicon MEMS as electrostatically levitated rotational gyroscopes and 2D optical scanners, and wafer level packaged devices as integrated capacitive pressure sensors and MEMS switches are described. MEMS which use non-silicon materials as LTCC with electrical feedthrough, SiC and LiNbO3 for probe cards for wafer-level burn-in test, molds for glass press molding and SAW wireless passive sensors respectively are also described.

An electrostatic CMOS/BiCMOS Lithium ion vibration-based harvester-charger IC

NASA Astrophysics Data System (ADS)

Torres, Erick Omar

Self-powered microsystems, such as wireless transceiver microsensors, appeal to an expanding application space in monitoring, control, and diagnosis for commercial, industrial, military, space, and biomedical products. As these devices continue to shrink, their microscale dimensions allow them to be unobtrusive and economical, with the potential to operate from typically unreachable environments and, in wireless network applications, deploy numerous distributed sensing nodes simultaneously. Extended operational life, however, is difficult to achieve since their limited volume space constrains the stored energy available, even with state-of-the-art technologies, such as thin-film lithium-ion batteries (Li Ion) and micro-fuel cells. Harvesting ambient energy overcomes this deficit by continually replenishing the energy reservoir and, as a result, indefinitely extending system lifetime. In this work, an electrostatic harvester that harnesses ambient kinetic energy from vibrations to charge an energy-storage device (e.g., a battery) is investigated, developed, and evaluated. The proposed harvester charges and holds the voltage across a vibration-sensitive variable capacitor so that vibrations can induce it to generate current into the battery when capacitance decreases (as its plates separate). The challenge is that energy is harnessed at relatively slow rates, producing low output power, and the electronics required to transfer it to charge a battery can easily demand more than the power produced. To this end, the system reduces losses by time-managing and biasing its circuits to operate only when needed and with just enough energy while charging the capacitor through an efficient quasi-lossless inductor-based precharger. As result, the proposed energy harvester stores a net energy gain in the battery during every vibration cycle. Two energy-harvesting integrated circuits (IC) were analyzed, designed, developed, and validated using a 0.7-im BiCMOS process and a 30-Hz

CMOS image sensor-based immunodetection by refractive-index change.

PubMed

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

Monolithic CMUT on CMOS Integration for Intravascular Ultrasound Applications

PubMed Central

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F. Levent

2012-01-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter based volumetric imaging arrays where the elements need to be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom designed CMOS receiver electronics from a commercial IC foundry. The CMUT on CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT to CMOS interconnection. This CMUT to CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire bonding method. Characterization experiments indicate that the CMUT on CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Experiments on a 1.6 mm diameter dual-ring CMUT array with a 15 MHz center frequency show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging CTOs located 1 cm away from the CMUT array. PMID:23443701

Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

PubMed

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

2011-12-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

Novel Electrically Tunable Microwave Solenoid Inductor and Compact Phase Shifter Utilizing Permaloy and PZT Thin Films

DOE PAGES

Wang, Tengxing; Jiang, Wei; Divan, Ralu; ...

2017-08-03

A Permalloy (Py) thin film enabled tunable 3-D solenoid inductor is designed and fabricated. The special configuration of magnetic core is discussed and by selectively patterning Py thin film, the proposed tunable inductor can work at frequency up to several GHz range. The inductance of the solenoid inductor can be electrically tuned by dc current and the tunability is above 10%. Utilizing the implemented Py enabled tunable solenoid inductor and Lead Zirconate Titanate (PZT) thin film enabled metal-insulator-metal (MIM) capacitor, a compact fully electrically tunable lumped elements phase shifter is achieved. The tunable phase shifter has both inductive and capacitivemore » tunability and the dual tunability significantly improves the tuning range and design flexibility. Moreover, the dual tunability is able to retain the equivalent characteristic impedance of the device in the process of the phase being tuned. Here, the phase of the device can be tuned by fully electrical methods and when dc current and dc voltage are provided, the length normalized phase tunability is up to 210°/cm« less

Hybrid CMOS/Molecular Integrated Circuits

NASA Astrophysics Data System (ADS)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

NASA Astrophysics Data System (ADS)

Kim, Bong-Hwan; Kim, Jong-Bok

2009-06-01

We have developed a microfabrication process for high aspect ratio thick silicon wafer molds and electroplating using flipchip bonding with THB 151N negative photoresist (JSR micro). This fabrication technique includes large area and high thickness silicon wafer mold electroplating. The process consists of silicon deep reactive ion etching (RIE) of the silicon wafer mold, photoresist bonding between the silicon mold and the substrate, nickel electroplating and a silicon removal process. High thickness silicon wafer molds were made by deep RIE and flipchip bonding. In addition, nickel electroplating was developed. Dry film resist (ORDYL MP112, TOK) and thick negative-tone photoresist (THB 151N, JSR micro) were used as bonding materials. In order to measure the bonding strength, the surface energy was calculated using a blade test. The surface energy of the bonding wafers was found to be 0.36-25.49 J m-2 at 60-180 °C for the dry film resist and 0.4-1.9 J m-2 for THB 151N in the same temperature range. Even though ORDYL MP112 has a better value of surface energy than THB 151N, it has a critical disadvantage when it comes to removing residue after electroplating. The proposed process can be applied to high aspect ratio MEMS structures, such as air gap inductors or vertical MEMS probe tips.

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Trends and risk factors for human Q fever in Australia, 1991-2014.

PubMed

Sloan-Gardner, T S; Massey, P D; Hutchinson, P; Knope, K; Fearnley, E

2017-03-01

Australian abattoir workers, farmers, veterinarians and people handling animal birthing products or slaughtering animals continue to be at high risk of Q fever despite an effective vaccine being available. National Notifiable Diseases Surveillance System data were analysed for the period 1991-2014, along with enhanced risk factor data from notified cases in the states of New South Wales and Queensland, to examine changes in the epidemiology of Q fever in Australia. The national Q fever notification rate reduced by 20% [incident rate ratio (IRR) 0·82] following the end of the National Q fever Management Program in 2006, and has increased since 2009 (IRR 1·01-1·34). Highest rates were in males aged 40-59 years (5·9/100 000) and 87% of Q fever cases occurred in New South Wales and Queensland. The age of Q fever cases and proportion of females increased over the study period. Based on the enhanced risk factor data, the most frequently listed occupation for Q fever cases involved contact with livestock, followed by 'no known risk' occupations. More complete and comparable enhanced risk factor data, at the State/Territory and national levels, would aid in further understanding of the epidemiology of Q fever.

Centimeter-scale MEMS scanning mirrors for high power laser application

NASA Astrophysics Data System (ADS)

Senger, F.; Hofmann, U.; v. Wantoch, T.; Mallas, C.; Janes, J.; Benecke, W.; Herwig, Patrick; Gawlitza, P.; Ortega-Delgado, M.; Grune, C.; Hannweber, J.; Wetzig, A.

2015-02-01

A higher achievable scan speed and the capability to integrate two scan axes in a very compact device are fundamental advantages of MEMS scanning mirrors over conventional galvanometric scanners. There is a growing demand for biaxial high speed scanning systems complementing the rapid progress of high power lasers for enabling the development of new high throughput manufacturing processes. This paper presents concept, design, fabrication and test of biaxial large aperture MEMS scanning mirrors (LAMM) with aperture sizes up to 20 mm for use in high-power laser applications. To keep static and dynamic deformation of the mirror acceptably low all MEMS mirrors exhibit full substrate thickness of 725 μm. The LAMM-scanners are being vacuum packaged on wafer-level based on a stack of 4 wafers. Scanners with aperture sizes up to 12 mm are designed as a 4-DOF-oscillator with amplitude magnification applying electrostatic actuation for driving a motor-frame. As an example a 7-mm-scanner is presented that achieves an optical scan angle of 32 degrees at 3.2 kHz. LAMM-scanners with apertures sizes of 20 mm are designed as passive high-Q-resonators to be externally excited by low-cost electromagnetic or piezoelectric drives. Multi-layer dielectric coatings with a reflectivity higher than 99.9 % have enabled to apply cw-laser power loads of more than 600 W without damaging the MEMS mirror. Finally, a new excitation concept for resonant scanners is presented providing advantageous shaping of intensity profiles of projected laser patterns without modulating the laser. This is of interest in lighting applications such as automotive laser headlights.

Light meson form factors at high Q2 from lattice QCD

NASA Astrophysics Data System (ADS)

Koponen, Jonna; Zimermmane-Santos, André; Davies, Christine; Lepage, G. Peter; Lytle, Andrew

2018-03-01

Measurements and theoretical calculations of meson form factors are essential for our understanding of internal hadron structure and QCD, the dynamics that bind the quarks in hadrons. The pion electromagnetic form factor has been measured at small space-like momentum transfer |q2| < 0.3 GeV2 by pion scattering from atomic electrons and at values up to 2.5 GeV2 by scattering electrons from the pion cloud around a proton. On the other hand, in the limit of very large (or infinite) Q2 = -q2, perturbation theory is applicable. This leaves a gap in the intermediate Q2 where the form factors are not known. As a part of their 12 GeV upgrade Jefferson Lab will measure pion and kaon form factors in this intermediate region, up to Q2 of 6 GeV2. This is then an ideal opportunity for lattice QCD to make an accurate prediction ahead of the experimental results. Lattice QCD provides a from-first-principles approach to calculate form factors, and the challenge here is to control the statistical and systematic uncertainties as errors grow when going to higher Q2 values. Here we report on a calculation that tests the method using an ηs meson, a 'heavy pion' made of strange quarks, and also present preliminary results for kaon and pion form factors. We use the nf = 2 + 1 + 1 ensembles made by the MILC collaboration and Highly Improved Staggered Quarks, which allows us to obtain high statistics. The HISQ action is also designed to have small dicretisation errors. Using several light quark masses and lattice spacings allows us to control the chiral and continuum extrapolation and keep systematic errors in check. Warning, no authors found for 2018EPJWC.17506016.

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C.; Yu, Y.; Triner, J. E.

1976-01-01

State space techniques are employed to derive accurate models for buck, boost, and buck/boost converter power stages operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without the dwell time as a special case of the discontinuous-current mode, when the dwell time vanishes. An abrupt change of system behavior including a reduction of the system order when the dwell time appears is shown both analytically and experimentally.

Alternate current magnetic property characterization of nonstoichiometric zinc ferrite nanocrystals for inductor fabrication via a solution based process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Hongseok; Kim, Jungkwun; Allen, Mark G.

2016-03-21

We investigate the ac magnetic behavior of solution processable, non-stoichiometric zinc ferrite nanocrystals with a series of sizes and zinc concentrations. Nearly monodisperse Zn{sub x}Fe{sub 3−x}O{sub 4} nanocrystals (x = 0–0.25) with an average size ranging from 7.4 nm to 13.8 nm are synthesized by using a solvothermal method. All the nanocrystals are in a superparamagnetic state at 300 K, which is confirmed by Superconductive Quantum Interference Device magnetometry. Due to the doping of non-magnetic Zn{sup 2+} into A site of ferrite, the saturation magnetization of nanocrystals increases as the size and Zn concentration increases. The ac magnetic permeability measurements at radio frequencies reveal thatmore » the real part of the magnetic permeability of similarly sized ferrite nanocrystals can be enhanced by almost twofold as the Zn{sup 2+} doping level increases from 0 to 0.25. The integration of 12.3 nm Zn{sub 0.25}Fe{sub 2.75}O{sub 4} nanocrystals into a toroidal inductor and a solenoid inductor prepared via a simple solution cast process yields a higher quality factors than air core inductors with the same geometries up to 5 MHz and 9 MHz, respectively, which is in the regime of the switching frequencies for the advanced integrated power converters.« less

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

A comparison of Q-factor estimation methods for marine seismic data

NASA Astrophysics Data System (ADS)

Kwon, J.; Ha, J.; Shin, S.; Chung, W.; Lim, C.; Lee, D.

2016-12-01

The seismic imaging technique draws information from inside the earth using seismic reflection and transmission data. This technique is an important method in geophysical exploration. Also, it has been employed widely as a means of locating oil and gas reservoirs because it offers information on geological media. There is much recent and active research into seismic attenuation and how it determines the quality of seismic imaging. Seismic attenuation is determined by various geological characteristics, through the absorption or scattering that occurs when the seismic wave passes through a geological medium. The seismic attenuation can be defined using an attenuation coefficient and represented as a non-dimensional variable known as the Q-factor. Q-factor is a unique characteristic of a geological medium. It is a very important material property for oil and gas resource development. Q-factor can be used to infer other characteristics of a medium, such as porosity, permeability and viscosity, and can directly indicate the presence of hydrocarbons to identify oil and gas bearing areas from the seismic data. There are various ways to estimate Q-factor in three different domains. In the time domain, pulse amplitude decay, pulse rising time, and pulse broadening are representative. Logarithm spectral ratio (LSR), centroid frequency shift (CFS), and peak frequency shift (PFS) are used in the frequency domain. In the time-frequency domain, Wavelet's Envelope Peak Instantaneous Frequency (WEPIF) is most frequently employed. In this study, we estimated and analyzed the Q-factor through the numerical model test and used 4 methods: the LSR, CFS, PFS, and WEPIF. Before we applied these 4 methods to observed data, we experimented with the numerical model test. The numerical model test data is derived from Norsar-2D, which is the basis of the ray-tracing algorithm, and we used reflection and normal incidence surveys to calculate Q-factor according to the array of sources and

System Modeling of a MEMS Vibratory Gyroscope and Integration to Circuit Simulation.

PubMed

Kwon, Hyukjin J; Seok, Seyeong; Lim, Geunbae

2017-11-18

Recently, consumer applications have dramatically created the demand for low-cost and compact gyroscopes. Therefore, on the basis of microelectromechanical systems (MEMS) technology, many gyroscopes have been developed and successfully commercialized. A MEMS gyroscope consists of a MEMS device and an electrical circuit for self-oscillation and angular-rate detection. Since the MEMS device and circuit are interactively related, the entire system should be analyzed together to design or test the gyroscope. In this study, a MEMS vibratory gyroscope is analyzed based on the system dynamic modeling; thus, it can be mathematically expressed and integrated into a circuit simulator. A behavioral simulation of the entire system was conducted to prove the self-oscillation and angular-rate detection and to determine the circuit parameters to be optimized. From the simulation, the operating characteristic according to the vacuum pressure and scale factor was obtained, which indicated similar trends compared with those of the experimental results. The simulation method presented in this paper can be generalized to a wide range of MEMS devices.

Inertial measurement unit using rotatable MEMS sensors

DOEpatents

Kohler, Stewart M [Albuquerque, NM; Allen, James J [Albuquerque, NM

2007-05-01

A MEM inertial sensor (e.g. accelerometer, gyroscope) having integral rotational means for providing static and dynamic bias compensation is disclosed. A bias compensated MEM inertial sensor is described comprising a MEM inertial sense element disposed on a rotatable MEM stage. A MEM actuator drives the rotation of the stage between at least two predetermined rotational positions. Measuring and comparing the output of the MEM inertial sensor in the at least two rotational positions allows for both static and dynamic bias compensation in inertial calculations based on the sensor's output. An inertial measurement unit (IMU) comprising a plurality of independently rotatable MEM inertial sensors and methods for making bias compensated inertial measurements are disclosed.

Inertial measurement unit using rotatable MEMS sensors

DOEpatents

Kohler, Stewart M.; Allen, James J.

2006-06-27

A MEM inertial sensor (e.g. accelerometer, gyroscope) having integral rotational means for providing static and dynamic bias compensation is disclosed. A bias compensated MEM inertial sensor is described comprising a MEM inertial sense element disposed on a rotatable MEM stage. A MEM actuator for drives the rotation of the stage between at least two predetermined rotational positions. Measuring and comparing the output of the MEM inertial sensor in the at least two rotational positions allows, for both static and dynamic bias compensation in inertial calculations based on the sensor's output. An inertial measurement unit (IMU) comprising a plurality of independently rotatable MEM inertial sensors and methods for making bias compensated inertial measurements are disclosed.

A Hybrid CMOS-Memristor Neuromorphic Synapse.

PubMed

Azghadi, Mostafa Rahimi; Linares-Barranco, Bernabe; Abbott, Derek; Leong, Philip H W

2017-04-01

Although data processing technology continues to advance at an astonishing rate, computers with brain-like processing capabilities still elude us. It is envisioned that such computers may be achieved by the fusion of neuroscience and nano-electronics to realize a brain-inspired platform. This paper proposes a high-performance nano-scale Complementary Metal Oxide Semiconductor (CMOS)-memristive circuit, which mimics a number of essential learning properties of biological synapses. The proposed synaptic circuit that is composed of memristors and CMOS transistors, alters its memristance in response to timing differences among its pre- and post-synaptic action potentials, giving rise to a family of Spike Timing Dependent Plasticity (STDP). The presented design advances preceding memristive synapse designs with regards to the ability to replicate essential behaviours characterised in a number of electrophysiological experiments performed in the animal brain, which involve higher order spike interactions. Furthermore, the proposed hybrid device CMOS area is estimated as [Formula: see text] in a [Formula: see text] process-this represents a factor of ten reduction in area with respect to prior CMOS art. The new design is integrated with silicon neurons in a crossbar array structure amenable to large-scale neuromorphic architectures and may pave the way for future neuromorphic systems with spike timing-dependent learning features. These systems are emerging for deployment in various applications ranging from basic neuroscience research, to pattern recognition, to Brain-Machine-Interfaces.

Dynamics of inductors for heating of the metal under deformation

NASA Astrophysics Data System (ADS)

Zimin, L. S.; Yeghiazaryan, A. S.; Protsenko, A. N.

2018-01-01

Current issues of creating powerful systems for hot sheet rolling with induction heating application in mechanical engineering and metallurgy were discussed. Electrodynamical and vibroacoustic problems occurring due to the induction heating of objects with complex shapes, particularly the slabs heating prior to rolling, were analysed. The numerical mathematical model using the method of related contours and the principle of virtual displacements is recommended for electrodynamical calculations. For the numerical solution of the vibrational problem, it is reasonable to use the finite element method (FEM). In general, for calculating the distribution forces, the law of Biot-Savart-Laplace method providing the determination of the current density of the skin layer in slab was used. The form of the optimal design of the inductor based on maximum hardness was synthesized while researching the vibrodynamic model of the system "inductor-metal" which provided allowable sound level meeting all established sanitary standards.

Portable design rules for bulk CMOS

NASA Technical Reports Server (NTRS)

Griswold, T. W.

1982-01-01

It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

Remotely accessible laboratory for MEMS testing

NASA Astrophysics Data System (ADS)

Sivakumar, Ganapathy; Mulsow, Matthew; Melinger, Aaron; Lacouture, Shelby; Dallas, Tim E.

2010-02-01

We report on the construction of a remotely accessible and interactive laboratory for testing microdevices (aka: MicroElectroMechancial Systems - MEMS). Enabling expanded utilization of microdevices for research, commercial, and educational purposes is very important for driving the creation of future MEMS devices and applications. Unfortunately, the relatively high costs associated with MEMS devices and testing infrastructure makes widespread access to the world of MEMS difficult. The creation of a virtual lab to control and actuate MEMS devices over the internet helps spread knowledge to a larger audience. A host laboratory has been established that contains a digital microscope, microdevices, controllers, and computers that can be logged into through the internet. The overall layout of the tele-operated MEMS laboratory system can be divided into two major parts: the server side and the client side. The server-side is present at Texas Tech University, and hosts a server machine that runs the Linux operating system and is used for interfacing the MEMS lab with the outside world via internet. The controls from the clients are transferred to the lab side through the server interface. The server interacts with the electronics required to drive the MEMS devices using a range of National Instruments hardware and LabView Virtual Instruments. An optical microscope (100 ×) with a CCD video camera is used to capture images of the operating MEMS. The server broadcasts the live video stream over the internet to the clients through the website. When the button is pressed on the website, the MEMS device responds and the video stream shows the movement in close to real time.

MEMS for pico- to micro-satellites

NASA Astrophysics Data System (ADS)

Shea, H. R.

2009-02-01

MEMS sensors, actuators, and sub-systems can enable an important reduction in the size and mass of spacecrafts, first by replacing larger and heavier components, then by replacing entire subsystems, and finally by enabling the microfabrication of highly integrated picosats. Very small satellites (1 to 100 kg) stand to benefit the most from MEMS technologies. These small satellites are typically used for science or technology demonstration missions, with higher risk tolerance than multi-ton telecommunication satellites. While MEMS are playing a growing role on Earth in safety-critical applications, in the harsh and remote environment of space, reliability is still the crucial issue, and the absence of an accepted qualification methodology is holding back MEMS from wider use. An overview is given of the range of MEMS applications in space. An effective way to prove that MEMS can operate reliably in space is to use them in space: we illustrate how Cubesats (1 kg, 1 liter, cubic satellites in a standardized format to reduce launch costs) can serve as low-cost vectors for MEMS technology demonstration in space. The Cubesat SwissCube developed in Switzerland is used as one example of a rapid way to fly new microtechnologies, and also as an example of a spacecraft whose performance is only possible thanks to MEMS.

Optical inspection of hidden MEMS structures

NASA Astrophysics Data System (ADS)

Krauter, Johann; Gronle, Marc; Osten, Wolfgang

2017-06-01

Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

Integrated Micro-scale Power Conversion

DTIC Science & Technology

2012-08-01

Micro Power Converters (μPC) Loads: Sources: μ-Power Converter (μPC) Thin-film battery Solar Cell Micro- fuel Cell Vibration Harvester...passive size • Hybrid integration with MEMS passives, particularly inductors Hybrid integration ARL focus Bubble Size = Volume [mm3] Industry Focus...Power converters survey Compiled by Bedair, Bashirullah Switched inductor (SI) Switched capacitor (SC) Resonant Resonat piezo Hybrid - SI / SC

Tunable Q-Factor RF Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balcazar, Mario D.; Yonehara, Katsuya; Moretti, Alfred

Intense neutrino beam is a unique probe for researching beyond the standard model. Fermilab is the main institution to produce the most powerful and widespectrum neutrino beam. From that respective, a radiation robust beam diagnostic system is a critical element in order to maintain the quality of the neutrino beam. Within this context, a novel radiation-resistive beam profile monitor based on a gasfilled RF cavity is proposed. The goal of this measurement is to study a tunable Qfactor RF cavity to determine the accuracy of the RF signal as a function of the quality factor. Specifically, measurement error of themore » Q-factor in the RF calibration is investigated. Then, the RF system will be improved to minimize signal error.« less

Control of solid-state lasers using an intra-cavity MEMS micromirror.

PubMed

Lubeigt, Walter; Gomes, Joao; Brown, Gordon; Kelly, Andrew; Savitski, Vasili; Uttamchandani, Deepak; Burns, David

2011-01-31

High reflectivity, electrothermal and electrostatic MEMS (Micro-Electro-Mechanical Systems) micromirrors were used as a control element within a Nd-doped laser cavity. Stable continuous-wave oscillation of a 3-mirror Nd:YLF laser at a maximum output power of 200 mW was limited by thermally-induced surface deformation of the micromirror. An electrostatic micromirror was used to induce Q-switching, resulting in pulse durations of 220 ns - 2 μs over a repetition frequency range of 6 kHz - 40 kHz.

MEMS fluidic actuator

DOEpatents

Kholwadwala, Deepesh K [Albuquerque, NM; Johnston, Gabriel A [Trophy Club, TX; Rohrer, Brandon R [Albuquerque, NM; Galambos, Paul C [Albuquerque, NM; Okandan, Murat [Albuquerque, NM

2007-07-24

The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

Sleep Estimates Using Microelectromechanical Systems (MEMS)

PubMed Central

te Lindert, Bart H. W.; Van Someren, Eus J. W.

2013-01-01

Study Objectives: Although currently more affordable than polysomnography, actigraphic sleep estimates have disadvantages. Brand-specific differences in data reduction impede pooling of data in large-scale cohorts and may not fully exploit movement information. Sleep estimate reliability might improve by advanced analyses of three-axial, linear accelerometry data sampled at a high rate, which is now feasible using microelectromechanical systems (MEMS). However, it might take some time before these analyses become available. To provide ongoing studies with backward compatibility while already switching from actigraphy to MEMS accelerometry, we designed and validated a method to transform accelerometry data into the traditional actigraphic movement counts, thus allowing for the use of validated algorithms to estimate sleep parameters. Design: Simultaneous actigraphy and MEMS-accelerometry recording. Setting: Home, unrestrained. Participants: Fifteen healthy adults (23-36 y, 10 males, 5 females). Interventions: None. Measurements: Actigraphic movement counts/15-sec and 50-Hz digitized MEMS-accelerometry. Analyses: Passing-Bablok regression optimized transformation of MEMS-accelerometry signals to movement counts. Kappa statistics calculated agreement between individual epochs scored as wake or sleep. Bland-Altman plots evaluated reliability of common sleep variables both between and within actigraphs and MEMS-accelerometers. Results: Agreement between epochs was almost perfect at the low, medium, and high threshold (kappa = 0.87 ± 0.05, 0.85 ± 0.06, and 0.83 ± 0.07). Sleep parameter agreement was better between two MEMS-accelerometers or a MEMS-accelerometer and an actigraph than between two actigraphs. Conclusions: The algorithm allows for continuity of outcome parameters in ongoing actigraphy studies that consider switching to MEMS-accelerometers. Its implementation makes backward compatibility feasible, while collecting raw data that, in time, could provide

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications.

PubMed

Moldovan, Clara F; Vitale, Wolfgang A; Sharma, Pankaj; Tamagnone, Michele; Mosig, Juan R; Ionescu, Adrian M

2016-08-10

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications and tunability. We propose a CMOS compatible fabrication process and report the first experimental assessment of their performance at microwaves frequencies (up to 10 GHz), demonstrating experimental GQCs in the pF range with a tuning ratio of 1.34:1 within 1.25 V, and Q-factors up to 12 at 1 GHz. The figures of merit of graphene variable capacitors are studied in detail from 150 to 350 K. Furthermore, we describe a systematic, graphene specific approach to optimize their performance and predict the figures of merit achieved if such a methodology is applied.

A 3.2-GHz fully integrated low-phase noise CMOS VCO with self-biasing current source for the IEEE 802.11a/hiperLAN WLAN standard

NASA Astrophysics Data System (ADS)

Quemada, C.; Adin, I.; Bistue, G.; Berenguer, R.; Mendizabal, J.

2005-06-01

A 3.3V, fully integrated 3.2-GHz voltage-controlled oscillator (VCO) is designed in a 0.18μm CMOS technology for the IEE 802.11a/HiperLAN WLAN standard for the UNII band from 5.15 to 5.35 GHz. The VCO is tunable between 2.85 GHz and 3.31 GHz. NMOS architecture with self-biasing current of the tank source is chosen. A startup circuit has been employed to avoid zero initial current. Current variation is lower than 1% for voltage supply variations of 10%. The use of a self-biasing current source in the tank provides a greater safety in the transconductance value and allows running along more extreme point operation The designed VCO displays a phase noise and output power of -98dBc/Hz (at 100 KHz offset frequency) and 0dBm respectively. This phase noise has been obtained with inductors of 2.2nH and quality factor of 12 at 3.2 GHz, and P-N junction varactors whose quality factor is estimated to exceed 40 at 3.2 GHz. These passive components have been fabricated, measured and modeled previously. The core of the VCO consumes 33mW DC power.

Modeling nonlinearities in MEMS oscillators.

PubMed

Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

2013-08-01

We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

An improved push-pull voltage fed converter using a tapped output-filter inductor

NASA Technical Reports Server (NTRS)

Wester, G. W.

1983-01-01

A new concept of using a tapped output-filter inductor and an auxiliary commutating diode to reduce the likelihood of transformer core saturation in a push-pull, voltage-fed converter is presented. The linearized circuit model and transfer functions are derived with a hybrid approach using both state-space and circuit averaging. Operation of the new converter - including parasitic effects - is discussed, and a design equation for inductor tap ratio is established. It is predicted and experimentally confirmed that the new converter has more symmetrical transformer core operation, and the potential exits for lower transistor turnon current and reduced transistor voltage stress. These benefits reduce switching loss and enhance transistor reliability.

MEMS Using SOI Substrate

NASA Technical Reports Server (NTRS)

Tang, Tony K.

1999-01-01

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

European MEMS foundries

NASA Astrophysics Data System (ADS)

Salomon, Patric R.

2003-01-01

According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

MEMS Applications in Aerodynamic Measurement Technology

NASA Technical Reports Server (NTRS)

Reshotko, E.; Mehregany, M.; Bang, C.

1998-01-01

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for

A Power-Efficient Capacitive Read-Out Circuit With Parasitic-Cancellation for MEMS Cochlea Sensors.

PubMed

Wang, Shiwei; Koickal, Thomas Jacob; Hamilton, Alister; Mastropaolo, Enrico; Cheung, Rebecca; Abel, Andrew; Smith, Leslie S; Wang, Lei

2016-02-01

This paper proposes a solution for signal read-out in the MEMS cochlea sensors that have very small sensing capacitance and do not have differential sensing structures. The key challenge in such sensors is the significant signal degradation caused by the parasitic capacitance at the MEMS-CMOS interface. Therefore, a novel capacitive read-out circuit with parasitic-cancellation mechanism is developed; the equivalent input capacitance of the circuit is negative and can be adjusted to cancel the parasitic capacitance. Chip results prove that the use of parasitic-cancellation is able to increase the sensor sensitivity by 35 dB without consuming any extra power. In general, the circuit follows a low-degradation low-amplification approach which is more power-efficient than the traditional high-degradation high-amplification approach; it employs parasitic-cancellation to reduce the signal degradation and therefore a lower gain is required in the amplification stage. Besides, the chopper-stabilization technique is employed to effectively reduce the low-frequency circuit noise and DC offsets. As a result of these design considerations, the prototype chip demonstrates the capability of converting a 7.5 fF capacitance change of a 1-Volt-biased 0.5 pF capacitive sensor pair into a 0.745 V signal-conditioned output at the cost of only 165.2 μW power consumption.

A tight and explicit representation of Q in sparse QR factorization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, E.G.; Peyton, B.W.

1992-05-01

In QR factorization of a sparse m{times}n matrix A (m {ge} n) the orthogonal factor Q is often stored implicitly as a lower trapezoidal matrix H known as the Householder matrix. This paper presents a simple characterization of the row structure of Q, which could be used as the basis for a sparse data structure that can store Q explicitly. The new characterization is a simple extension of a well known row-oriented characterization of the structure of H. Hare, Johnson, Olesky, and van den Driessche have recently provided a complete sparsity analysis of the QR factorization. Let U be themore » matrix consisting of the first n columns of Q. Using results from, we show that the data structures for H and U resulting from our characterizations are tight when A is a strong Hall matrix. We also show that H and the lower trapezoidal part of U have the same sparsity characterization when A is strong Hall. We then show that this characterization can be extended to any weak Hall matrix that has been permuted into block upper triangular form. Finally, we show that permuting to block triangular form never increases the fill incurred during the factorization.« less

MEMS-based IR-sources

NASA Astrophysics Data System (ADS)

Weise, Sebastian; Steinbach, Bastian; Biermann, Steffen

2016-03-01

The series JSIR350 sources are MEMS based infrared emitters. These IR sources are characterized by a high radiation output. Thus, they are excellent for NDIR gas analysis and are ideally suited for using with our pyro-electric or thermopile detectors. The MEMS chips used in Micro-Hybrid's infrared emitters consist of nano-amorphous carbon (NAC). The MEMS chips are produced in the USA. All Micro-Hybrid Emitter are designed and specified to operate up to 850°C. The improvements we have made in the source's packaging enable us to provide IR sources with the best performance on the market. This new technology enables us to seal the housings of infrared radiation sources with soldered infrared filters or windows and thus cause the parts to be impenetrable to gases. Micro-Hybrid provide various ways of adapting our MEMS based infrared emitter JSIR350 to customer specifications, like specific burn-in parameters/characteristic, different industrial standard housings, producible with customized cap, reflector or pin-out.

Expansion of CMOS array design techniques

NASA Technical Reports Server (NTRS)

Feller, A.; Ramondetta, P.

1977-01-01

The important features of the multiport (double entry) automatic placement and routing programs for standard cells are described. Measured performance and predicted performance were compared for seven CMOS/SOS array types and hybrids designed with the high speed CMOS/SOS cell family. The CMOS/SOS standard cell data sheets are listed and described.

Surface chemistry and tribology of MEMS.

PubMed

Maboudian, Roya; Carraro, Carlo

2004-01-01

The microscopic length scale and high surface-to-volume ratio, characteristic of microelectro-mechanical systems (MEMS), dictate that surface properties are of paramount importance. This review deals with the effects of surface chemical treatments on tribological properties (adhesion, friction, and wear) of MEMS devices. After a brief review of materials and processes that are utilized in MEMS technology, the relevant tribological and chemical issues are discussed. Various MEMS microinstruments are discussed, which are commonly employed to perform adhesion, friction, and wear measurements. The effects of different surface treatments on the reported tribological properties are discussed.

Hyperspectral CMOS imager

NASA Astrophysics Data System (ADS)

Jerram, P. A.; Fryer, M.; Pratlong, J.; Pike, A.; Walker, A.; Dierickx, B.; Dupont, B.; Defernez, A.

2017-11-01

CCDs have been used for many years for Hyperspectral imaging missions and have been extremely successful. These include the Medium Resolution Imaging Spectrometer (MERIS) [1] on Envisat, the Compact High Resolution Imaging Spectrometer (CHRIS) on Proba and the Ozone Monitoring Instrument operating in the UV spectral region. ESA are also planning a number of further missions that are likely to use CCD technology (Sentinel 3, 4 and 5). However CMOS sensors have a number of advantages which means that they will probably be used for hyperspectral applications in the longer term. There are two main advantages with CMOS sensors: First a hyperspectral image consists of spectral lines with a large difference in intensity; in a frame transfer CCD the faint spectral lines have to be transferred through the part of the imager illuminated by intense lines. This can lead to cross-talk and whilst this problem can be reduced by the use of split frame transfer and faster line rates CMOS sensors do not require a frame transfer and hence inherently will not suffer from this problem. Second, with a CMOS sensor the intense spectral lines can be read multiple times within a frame to give a significant increase in dynamic range. We will describe the design, and initial test of a CMOS sensor for use in hyperspectral applications. This device has been designed to give as high a dynamic range as possible with minimum cross-talk. The sensor has been manufactured on high resistivity epitaxial silicon wafers and is be back-thinned and left relatively thick in order to obtain the maximum quantum efficiency across the entire spectral range

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C. Y.; Yu, Y.

1979-01-01

State-space techniques are employed to derive accurate models for the three basic switching converter power stages: buck, boost, and buck/boost operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without dwell time as a special case of the discontinuous-current mode when the dwell time vanishes. Abrupt changes of system behavior, including a reduction of the system order when the dwell time appears, are shown both analytically and experimentally. Merits resulting from the present modeling technique in comparison with existing modeling techniques are illustrated.

Three-dimensional impedance engineering for mixed-signal system-on-chip applications

NASA Astrophysics Data System (ADS)

Chong, Kyuchul

A novel approach for three-dimensional substrate impedance engineering of p-/p+ epi substrate is proposed for mixed-signal integrated circuit applications. This technology requires minimum intrusion to conventional Si CMOS processing, but offers astounding improvements with regard to RF crosstalk via substrate and RF passive device performance. The engineered substrate consists of conducting as well as semi-insulating regions strategically placed three-dimensionally throughout the volume of the substrate. The p-/p+ epi substrate is used to prevent latch-up at tight design rules in high performance digital CMOS. Metal vias are fabricated from the front side using electroless plating method for Faraday cage isolation structure as well as "true ground" contacts. A self-limiting micro-PS formation process is employed to allow the insertion of semi-insulating regions from the backside of the wafer and RIE etch to remove p- layer is performed from the front side completely eliminating any parasitic pathways for crosstalk. The crosstalk isolation methods in this study are based on the principle of RF noise shielding in addition to insulating. Both the suppression of crosstalk by the metal vias and micro-PS trench isolation are so significant that the crosstalk goes down to the noise floor of the conventional measurement instruments. The use of micro-PS layer effectively can reduce the parasitic substrate effect. These reductions result in higher Q and fr of inductors on micro-PS region. Inductors located on micro-PS are subjected to a much less stringent set of constraints than that on bulk Si substrates, allowing for much higher inductance without severe sacrifice in Q and fr, and much higher Q for with reasonable inductance and fr. The bond pad structure using micro-PS can significantly reduce the parasitic bond pad capacitance and increases the crosstalk isolation characteristic. Reducing the parasitic pad capacitance by using micro-PS results in high bond pad resonant

Dynamic increase and decrease of photonic crystal nanocavity Q factors for optical pulse control.

PubMed

Upham, Jeremy; Tanaka, Yoshinori; Asano, Takashi; Noda, Susumu

2008-12-22

We introduce recent advances in dynamic control over the Q factor of a photonic crystal nanocavity system. By carefully timing a rapid increase of the Q factor from 3800 to 22,000, we succeed in capturing a 4ps signal pulse within the nanocavity with a photon lifetime of 18ps. By performing an additional transition of the Q factor within the photon lifetime, the held light is once again ejected from of the system on demand.

Electrostatic MEMS devices with high reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Research on ion implantation in MEMS device fabrication by theory, simulation and experiments

NASA Astrophysics Data System (ADS)

Bai, Minyu; Zhao, Yulong; Jiao, Binbin; Zhu, Lingjian; Zhang, Guodong; Wang, Lei

2018-06-01

Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

A MEMS Interface IC With Low-Power and Wide-Range Frequency-to-Voltage Converter for Biomedical Applications.

PubMed

Arefin, Md Shamsul; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2016-04-01

This paper presents an interface circuit for capacitive and inductive MEMS biosensors using an oscillator and a charge pump based frequency-to-voltage converter. Frequency modulation using a differential crossed coupled oscillator is adopted to sense capacitive and inductive changes. The frequency-to-voltage converter is designed with a negative feedback system and external controlling parameters to adjust the sensitivity, dynamic range, and nominal point for the measurement. The sensitivity of the frequency-to-voltage converter is from 13.28 to 35.96 mV/MHz depending on external voltage and charging current. The sensitivity ranges of the capacitive and inductive interface circuit are 17.08 to 54.4 mV/pF and 32.11 to 82.88 mV/mH, respectively. A capacitive MEMS based pH sensor is also connected with the interface circuit to measure the high acidic gastric acid throughout the digestive tract. The sensitivity for pH from 1 to 3 is 191.4 mV/pH with 550 μV(pp) noise. The readout circuit is designed and fabricated using the UMC 0.18 μm CMOS technology. It occupies an area of 0.18 mm (2) and consumes 11.8 mW.

A high speed and high gain CMOS receiver chip for a pulsed time-of-flight laser rangefinder

NASA Astrophysics Data System (ADS)

Yu, Jin-jin; Deng, Ruo-han; Yuan, Hong-hui; Chen, Yong-ping

2011-06-01

An integrated receiver channel for a pulsed time-of-flight (TOF) laser rangefinder has been designed. Pulsed TOF laser range finding devices using a laser diode transmitter can achieve millimeter-level distance measurement accuracy in a measurement range of several tens of meters to non-cooperative targets. The amplifier exploits the regulated cascade (RGC) configuration as the input-stage, thus achieving as large effective input trans-conductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. To enlarge the bandwidth, inductive peaking technology has been adopted. An active inductor (MOS-L) is used instead of spiral inductor in CMOS process. An R-2R resistor ladder is inserting between per-amplifier and post-amplifier as the variable attenuator for digital gain control purpose. The gain-bandwidth of a basic differential pair with resistive load is not large enough for broad band operation. A circuit solution to improve both gain and bandwidth of an amplifying stage is proposed. Traditional and modified Cherry-Hooper amplifiers are discussed and the cascading of several stages to constitute the post-amplifier is designed. The fully integrated one-chip solution is designed with Cadence IC design platform. The simulation result shows the bandwidth of the trans-impedance amplifier is 215MHz with the presence of a 2pF input capacitor and 5pF load capacitor. And the maximum trans-impedance gain is 136dB. The walk error is less than 1ns in 1:1000 dynamic range. The responsive time is less than 2.2ns.

Superconductor Electronics Fabrication Process with MoNx Kinetic Inductors and Self-Shunted Josephson Junctions

NASA Astrophysics Data System (ADS)

Tolpygo, Sergey K.; Bolkhovsky, Vladimir; Oates, Daniel E.; Rastogi, Ravi; Zarr, Scott; Day, Alexandra L.; Weir, Tarence J.; Wynn, Alex; Johnson, Leonard M.

2018-06-01

Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors utilizing multiple layers of Nb. To overcome these challenges, we are developing a fabrication process with self-shunted high-J$_c$ JJs and compact thin-film MoN$_x$ kinetic inductors instead of geometrical inductors. We present fabrication details and properties of MoN$_x$ films with a wide range of T$_c$, including residual stress, electrical resistivity, critical current, and magnetic field penetration depth {\\lambda}$_0$. As kinetic inductors, we implemented Mo$_2$N films with T$_c$ about 8 K, {\\lambda}$_0$ about 0.51 {\\mu}m, and inductance adjustable in the range from 2 to 8 pH/sq. We also present data on fabrication and electrical characterization of Nb-based self-shunted JJs with AlO$_x$ tunnel barriers and J$_c$ = 0.6 mA/{\\mu}m$^2$, and with 10-nm thick Si$_{1-x}$Nb$_x$ barriers, with x from 0.03 to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the electron transport mechanism in Si$_{1-x}$Nb$_x$ barriers at x < 0.08 is inelastic resonant tunneling via chains of multiple localized states. At larger x, their Josephson characteristics are strongly dependent on x and residual stress in Nb electrodes, and in general are inferior to AlO$_x$ tunnel barriers.

Triz in Mems

NASA Astrophysics Data System (ADS)

Apte, Prakash R.

1999-11-01

TRIZ is a Russian abbreviation. Genrich Altshuller developed it fifty years ago in the former Soviet Union. He examined thousands of inventions made in different technological systems and formulated a 'Theory of Inventive problem solving' (TRIZ). Altshuller's research of over fifty years on Creativity and Inventive Problem Solving has led to many different classifications, methods and tools of invention. Some of these are, Contradictions table, Level of inventions, Patterns in evolution of technological systems, ARIZ-Algorithm for Inventive Problem Solving, Diagnostic problem solving and Anticipatory Failure Determination. MEMS research consists of conceptual design, process technology and including of various Mechanical, ELectrical, Thermal, Magnetic, Acoustic and other effects. MEMS system s are now rapidly growing in complexity. Each system will thus follow one or more 'patterns of evolution' as given by Altshuller. This paper attempts to indicate how various TRIZ tools can be used in MEMS research activities.

Soft ferrite cores characterization for integrated micro-inductors

NASA Astrophysics Data System (ADS)

Nguyen, Yen Mai; Lopez, Thomas; Laur, Jean-Pierre; Bourrier, David; Charlot, Samuel; Valdez-Nava, Zarel; Bley, Vincent; Combettes, Céline; Brunet, Magali

2013-12-01

Ferrite-based micro-inductors are proposed for hybrid integration on silicon for low-power medium frequency DC-DC converters. Due to their small coercive field and their high resistivity, soft ferrites are good candidates for a magnetic core working at moderate frequencies in the range of 5-10 MHz. We have studied several soft ferrites including commercial ferrite film and U70 and U200 homemade ferrites. The inductors are fabricated at wafer level using micromachining and assembling techniques. The proposed process is based on a sintered ferrite core placed in between thick electroplated copper windings. The low profile ferrite cores of 1.2 × 2.6 × 0.2 mm3 are produced by two methods from green tape-casted films and ferrite powder. This paper presents the magnetic characterization of the sintered ferrite films cut and printed in rectangular shape and sintered at different temperatures. The comparison is made in order to find out the best material for the core that can reach the required inductance (470 nH at 6 MHz) under 0.6A current DC bias and that generate the smallest losses. An inductance density of 285 nH/ mm2 up to 6 MHz was obtained for ESL 40011 cores that is much higher than the previously reported devices. The small size of our devices is also a prominent point.

Modelling of double air-bridged structured inductor implemented by a GaAs integrated passive device manufacturing process

NASA Astrophysics Data System (ADS)

Li, Yang; Yao, Zhao; Zhang, Chun-Wei; Fu, Xiao-Qian; Li, Zhi-Ming; Li, Nian-Qiang; Wang, Cong

2017-05-01

In order to provide excellent performance and show the development of a complicated structure in a module and system, this paper presents a double air-bridge-structured symmetrical differential inductor based on integrated passive device technology. Corresponding to the proposed complicated structure, a new manufacturing process fabricated on a high-resistivity GaAs substrate is described in detail. Frequency-independent physical models are presented with lump elements and the results of skin effect-based measurements. Finally, some key features of the inductor are compared; good agreement between the measurements and modeled circuit fully verifies the validity of the proposed modeling approach. Meanwhile, we also present a comparison of different coil turns for inductor performance. The proposed work can provide a good solution for the design, fabrication, modeling, and practical application of radio-frequency modules and systems.

Stability of Q-Factors across Two Data Collection Methods.

ERIC Educational Resources Information Center

Daniel, Larry G.

The purpose of the present study was to determine how two different data collection techniques would affect the Q-factors derived from several factor analytic procedures. Faculty members (N=146) from seven middle schools responded to 61 items taken from an instrument designed to measure aspects of an idealized middle school culture; the instrument…

MEMS Calculator

National Institute of Standards and Technology Data Gateway

SRD 166 MEMS Calculator (Web, free access)   This MEMS Calculator determines the following thin film properties from data taken with an optical interferometer or comparable instrument: a) residual strain from fixed-fixed beams, b) strain gradient from cantilevers, c) step heights or thicknesses from step-height test structures, and d) in-plane lengths or deflections. Then, residual stress and stress gradient calculations can be made after an optical vibrometer or comparable instrument is used to obtain Young's modulus from resonating cantilevers or fixed-fixed beams. In addition, wafer bond strength is determined from micro-chevron test structures using a material test machine.

MEMS microdisplays: overview and markets

NASA Astrophysics Data System (ADS)

Bouchaud, Jérémie; Nowak, Olivier

2006-04-01

MEMS based microdisplays have been given a lot of attention recently since the DLP based products have started to generate substantial revenues for Texas Instrument. Other companies are trying to enter this promising market with similar or alternative concepts. How will he MEMS-based microdisplay market develop until the end of the decade? May other mass markets emerge such as displays for cell phones? Is anyone in the position to challenge TI? This paper presents the results of the analysis of MEMS microdisplay applications and markets in the NEXUS III study.

MEMS microdisplays: overview and markets

NASA Astrophysics Data System (ADS)

Bouchaud, Jérémie; Wicht, Henning

2006-01-01

MEMS based microdisplays have been given a lot of attention recently since the DLP based products have started to generate substantial revenues for Texas Instrument. Other companies are trying to enter this promising market with similar or alternative concepts. How will he MEMS-based microdisplay market develop until the end of the decade? May other mass markets emerge such as displays for cell phones? Is anyone in the position to challenge TI? This paper presents the results of the analysis of MEMS microdisplay applications and markets in the NEXUS III study.

George E. Pake Prize Lecture: CMOS Technology Roadmap: Is Scaling Ending?

NASA Astrophysics Data System (ADS)

Chen, Tze-Chiang (T. C.)

The development of silicon technology has been based on the principle of physics and driven by the system needs. Traditionally, the system needs have been satisfied by the increase in transistor density and performance, as suggested by Moore's Law and guided by ''Dennard CMOS scaling theory''. As the silicon industry moves towards the 14nm node and beyond, three of the most important challenges facing Moore's Law and continued CMOS scaling are the growing standby power dissipation, the increasing variability in device characteristics and the ever increasing manufacturing cost. Actually, the first two factors are the embodiments of CMOS approaching atomistic and quantum-mechanical physics boundaries. Industry directions for addressing these challenges are also developing along three primary approaches: Extending silicon scaling through innovations in materials and device structure, expanding the level of integration through three-dimensional structures comprised of through-silicon-vias holes and chip stacking in order to enhance functionality and parallelism and exploring post-silicon CMOS innovation with new nano-devices based on distinctly different principles of physics, new materials and new processes such as spintronics, carbon nanotubes and nanowires. Hence, the infusion of new materials, innovative integration and novel device structures will continue to extend CMOS technology scaling for at least another decade.

Coenzyme Q as an antiadipogenic factor.

PubMed

Bour, Sandy; Carmona, Maria-Carmen; Galinier, Anne; Caspar-Bauguil, Sylvie; Van Gaal, Luc; Staels, Bart; Pénicaud, Luc; Casteilla, Louis

2011-02-01

Coenzyme Q (CoQ) is not only the single antioxidant synthesized in humans but also an obligatory element of mitochondrial functions. We have previously reported CoQ deficiency in white adipose tissue of ob/ob mice. We sought to determine (i) whether this deficit exists in all species and its relevance in human obesity and (ii) to what extent CoQ could be involved in adipocyte differentiation. Here we identified in rodents as well as in humans a specific very strong nonlinear negative correlation between CoQ content in subcutaneous adipose tissue and obesity indexes. This striking correlation reveals a threshold value similar in both species. This relative deficit in CoQ content in adipose tissue rapidly took place during the time course of high-fat-diet-induced obesity in mice. Adipocyte differentiation was assessed in vitro using the preadipocyte 3T3-F442A cell line. When CoQ synthesis was inhibited by a pharmacological approach using chlorobenzoic acid, this strongly triggered adipose differentiation. In contrast, adipogenesis was strongly inhibited when a long-term increase in CoQ content was obtained by overexpressing human 4-hydroxy benzoate acid polyprenyltransferase gene. Altogether, these data suggest that a strict level of CoQ remains essential for adipocyte differentiation, and its impairment is associated with obesity.

Triple inverter pierce oscillator circuit suitable for CMOS

DOEpatents

Wessendorf,; Kurt, O [Albuquerque, NM

2007-02-27

An oscillator circuit is disclosed which can be formed using discrete field-effect transistors (FETs), or as a complementary metal-oxide-semiconductor (CMOS) integrated circuit. The oscillator circuit utilizes a Pierce oscillator design with three inverter stages connected in series. A feedback resistor provided in a feedback loop about a second inverter stage provides an almost ideal inverting transconductance thereby allowing high-Q operation at the resonator-controlled frequency while suppressing a parasitic oscillation frequency that is inherent in a Pierce configuration using a "standard" triple inverter for the sustaining amplifier. The oscillator circuit, which operates in a range of 10 50 MHz, has applications for use as a clock in a microprocessor and can also be used for sensor applications.

Recent progress in MEMS technology development for military applications

NASA Astrophysics Data System (ADS)

Ruffin, Paul B.; Burgett, Sherrie J.

2001-08-01

The recent progress of ongoing efforts at the Army Aviation and Missile Command (AMCOM) to develop microelectromechanical systems (MEMS) technology for military applications is discussed in this paper. The current maturity level of low cost, low power, micro devices in industry, which range from simple temperature and pressure sensors to accelerometers in airbags, provides a viable foundation for the development of rugged MEMS devices for dual-use applications. Early MEMS technology development efforts at AMCOM emphasized inertial MEMS sensors. An Army Science and Technology Objective (STO) project was initiated to develop low cost inertial components with moderate angular rate sensor resolution for measuring pitch and yaw of missile attitude and rotational roll rate. Leveraging the Defense Advanced Research Projects Agency and other Government agencies has resulted in the development of breadboard inertial MEMS devices with improved robustness. During the past two years, MEMS research at AMCOM has been expanded to include environmental MEMS sensors for missile health monitoring, RF-MEMS, optical MEMS devices for beam steering, and micro-optic 'benches' for opto-electronics miniaturization. Additionally, MEMS packaging and integration issues have come into focus and are being addressed. Selected ongoing research efforts in these areas are presented, and some horizon MEMS sensors requirements for Army and law enforcement are presented for consideration.

Dynamic metasurface lens based on MEMS technology

NASA Astrophysics Data System (ADS)

Roy, Tapashree; Zhang, Shuyan; Jung, Il Woong; Troccoli, Mariano; Capasso, Federico; Lopez, Daniel

2018-02-01

In the recent years, metasurfaces, being flat and lightweight, have been designed to replace bulky optical components with various functions. We demonstrate a monolithic Micro-Electro-Mechanical System (MEMS) integrated with a metasurface-based flat lens that focuses light in the mid-infrared spectrum. A two-dimensional scanning MEMS platform controls the angle of the lens along two orthogonal axes by ±9°, thus enabling dynamic beam steering. The device could be used to compensate for off-axis incident light and thus correct for aberrations such as coma. We show that for low angular displacements, the integrated lens-on-MEMS system does not affect the mechanical performance of the MEMS actuators and preserves the focused beam profile as well as the measured full width at half maximum. We envision a new class of flat optical devices with active control provided by the combination of metasurfaces and MEMS for a wide range of applications, such as miniaturized MEMS-based microscope systems, LIDAR scanners, and projection systems.

Miniaturized GPS/MEMS IMU integrated board

NASA Technical Reports Server (NTRS)

Lin, Ching-Fang (Inventor)

2012-01-01

This invention documents the efforts on the research and development of a miniaturized GPS/MEMS IMU integrated navigation system. A miniaturized GPS/MEMS IMU integrated navigation system is presented; Laser Dynamic Range Imager (LDRI) based alignment algorithm for space applications is discussed. Two navigation cameras are also included to measure the range and range rate which can be integrated into the GPS/MEMS IMU system to enhance the navigation solution.

CMOS micromachined capacitive cantilevers for mass sensing

NASA Astrophysics Data System (ADS)

Li, Ying-Chung; Ho, Meng-Han; Hung, Shi-Jie; Chen, Meng-Huei; S-C Lu, Michael

2006-12-01

In this paper, we present the design, fabrication and characterization of the CMOS micromachined cantilevers for mass sensing in the femtogram range. The cantilevers consisting of multiple metal and dielectric layers are fabricated after completion of a conventional CMOS process by dry etching steps. The cantilevers are electrostatically actuated to resonance by in-plane electrodes. The mechanical resonant frequency is detected capacitively with on-chip circuitry, where the modulation technique is applied to eliminate capacitive feedthrough from the driving port and to lessen the effect of flicker noise. The highest resonant frequency of the cantilevers is measured at 396.46 kHz with a quality factor of 2600 at 10 mTorr. The resonant frequency shift after deposition of a 0.1 µm SiO2 layer is 140 Hz, averaging 353 fg Hz-1.

Internal friction quality-factor Q under confining pressure. [of lunar rocks

NASA Technical Reports Server (NTRS)

Tittmann, B. R.; Ahlberg, L.; Nadler, H.; Curnow, J.; Smith, T.; Cohen, E. R.

1977-01-01

It has been found in previous studies that small amounts of adsorbed volatiles can have a profound effect on the internal friction quality-factor Q of rocks and other porous media. Pandit and Tozer (1970) have suggested that the laboratory-measured Q of volatile-free rocks should be similar to the in situ seismic Q values of near-surface lunar rocks which according to Latham et al. (1970) are in the range of 3000-5000. Observations of dramatic increases in Q with outgassing up to values approaching 2000 in the seismic frequency range confirm this supposition. Measurements under confining pressures with the sample encapsulated under hard vacuum are reported to aid in the interpretation of seismic data obtained below the lunar surface. It has been possible to achieve in the experiments Q values just under 2000 at about 1 kbar for a terrestrial analog of lunar basalt. It was found that a well-outgassed sample maintains a high Q whereas one exposed to moisture maintains a low Q as the confining pressure is raised to 2.5 kbar. This result suggests that volatiles can indeed affect Q when cracks are partially closed and the high lunar seismic Q values reported are concomitant with very dry rock down to depths of at least 50 km.

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1977-01-01

Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

Characterization of assembled MEMS

NASA Astrophysics Data System (ADS)

Jandric, Zoran; Randall, John N.; Saini, Rahul; Nolan, Michael; Skidmore, George

2004-12-01

Zyvex is developing a low-cost high-precision method for manufacturing MEMS-based three-dimensional structures/assemblies. The assembly process relies on compliant properties of the interconnecting components. The sockets and connectors are designed to benefit from their compliant nature by allowing the mechanical component to self-align, i.e. reposition themselves to their designed, stable position, independent of the initial placement of the part by the external robot. Thus, the self-aligning property guarantees the precision of the assembled structure to be very close to, or the same, as the precision of the lithography process itself. A three-dimensional (3D) structure is achieved by inserting the connectors into the sockets through the use of a passive end-effector. We have developed the automated, high-yield, assembly procedure which permits connectors to be picked up from any location within the same die, or a separate die. This general procedure allows for the possibility to assemble parts of dissimilar materials. We have built many 3D MEMS structures, including several 3D MEMS devices such as a scanning electron microscope (SEM) micro column, mass-spectrometer column, variable optical attenuator. For these 3D MEMS structures we characterize their mechanical strength through finite element simulation, dynamic properties by finite-element analysis and experimentally with UMECH"s MEMS motion analyzer (MMA), alignment accuracy by using an in-house developed dihedral angle measurement laser autocollimator, and impact properties by performing drop tests. The details of the experimental set-ups, the measurement procedures, and the experimental data are presented in this paper.

Characterization of assembled MEMS

NASA Astrophysics Data System (ADS)

Jandric, Zoran; Randall, John N.; Saini, Rahul; Nolan, Michael; Skidmore, George

2005-01-01

Zyvex is developing a low-cost high-precision method for manufacturing MEMS-based three-dimensional structures/assemblies. The assembly process relies on compliant properties of the interconnecting components. The sockets and connectors are designed to benefit from their compliant nature by allowing the mechanical component to self-align, i.e. reposition themselves to their designed, stable position, independent of the initial placement of the part by the external robot. Thus, the self-aligning property guarantees the precision of the assembled structure to be very close to, or the same, as the precision of the lithography process itself. A three-dimensional (3D) structure is achieved by inserting the connectors into the sockets through the use of a passive end-effector. We have developed the automated, high-yield, assembly procedure which permits connectors to be picked up from any location within the same die, or a separate die. This general procedure allows for the possibility to assemble parts of dissimilar materials. We have built many 3D MEMS structures, including several 3D MEMS devices such as a scanning electron microscope (SEM) micro column, mass-spectrometer column, variable optical attenuator. For these 3D MEMS structures we characterize their mechanical strength through finite element simulation, dynamic properties by finite-element analysis and experimentally with UMECH"s MEMS motion analyzer (MMA), alignment accuracy by using an in-house developed dihedral angle measurement laser autocollimator, and impact properties by performing drop tests. The details of the experimental set-ups, the measurement procedures, and the experimental data are presented in this paper.

MEMS reliability: coming of age

NASA Astrophysics Data System (ADS)

Douglass, Michael R.

2008-02-01

In today's high-volume semiconductor world, one could easily take reliability for granted. As the MOEMS/MEMS industry continues to establish itself as a viable alternative to conventional manufacturing in the macro world, reliability can be of high concern. Currently, there are several emerging market opportunities in which MOEMS/MEMS is gaining a foothold. Markets such as mobile media, consumer electronics, biomedical devices, and homeland security are all showing great interest in microfabricated products. At the same time, these markets are among the most demanding when it comes to reliability assurance. To be successful, each company developing a MOEMS/MEMS device must consider reliability on an equal footing with cost, performance and manufacturability. What can this maturing industry learn from the successful development of DLP technology, air bag accelerometers and inkjet printheads? This paper discusses some basic reliability principles which any MOEMS/MEMS device development must use. Examples from the commercially successful and highly reliable Digital Micromirror Device complement the discussion.

Q-factor control of multilayer micromembrane using PZT composite material

NASA Astrophysics Data System (ADS)

Čekas, Elingas; Janušas, Giedrius; Palevicius, Arvydas; Janušas, Tomas; Ciganas, Justas

2018-02-01

Cantilever and membrane based sensors, which are capable of providing accurate detection of target analytes have been always an important research topic of medical diagnostics, food testing, and environmental monitoring fields. Here, the mechanical detection is achieved by micro- and nano-scale cantilevers for stress sensing and mass sensing, or micro- and nano-scale plates or membranes. High sensitivity is a major issue for the active element and it could be achieved via increased Q-factor. The ability to control the Q factor expands the range of application of the device and allows to achieve more accurate results. The aim of this paper is to investigate the mechanical and electrical properties, as well as, the ability to control the Q factor of the membrane with PZT nanocomposite. This multilayered membrane was formatted using the n-type <100> silicon substrate by implementing the Low Pressure Chemical Vapor Deposition (LPCVD), photolithography by using photomask with defined dimensions, deep etching, and e-beam evaporation techniques. Dynamic and electrical characteristics of the membrane were numerically investigated using COMSOL Multiphysics software. The use of the multilayered membrane can range from simple monitoring of particles concentration in a closed environment to inspecting glucose levels in human fluids (blood, tears, sweat, etc.).

Lab-on-CMOS Integration of Microfluidics and Electrochemical Sensors

PubMed Central

Huang, Yue; Mason, Andrew J.

2013-01-01

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms. PMID:23939616

Lab-on-CMOS integration of microfluidics and electrochemical sensors.

PubMed

Huang, Yue; Mason, Andrew J

2013-10-07

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

The combination of high Q factor and chirality in twin cavities and microcavity chain

PubMed Central

Song, Qinghai; Zhang, Nan; Zhai, Huilin; Liu, Shuai; Gu, Zhiyuan; Wang, Kaiyang; Sun, Shang; Chen, Zhiwei; Li, Meng; Xiao, Shumin

2014-01-01

Chirality in microcavities has recently shown its bright future in optical sensing and microsized coherent light sources. The key parameters for such applications are the high quality (Q) factor and large chirality. However, the previous reported chiral resonances are either low Q modes or require very special cavity designs. Here we demonstrate a novel, robust, and general mechanism to obtain the chirality in circular cavity. By placing a circular cavity and a spiral cavity in proximity, we show that ultra-high Q factor, large chirality, and unidirectional output can be obtained simultaneously. The highest Q factors of the non-orthogonal mode pairs are almost the same as the ones in circular cavity. And the co-propagating directions of the non-orthogonal mode pairs can be reversed by tuning the mode coupling. This new mechanism for the combination of high Q factor and large chirality is found to be very robust to cavity size, refractive index, and the shape deformation, showing very nice fabrication tolerance. And it can be further extended to microcavity chain and microcavity plane. We believe that our research will shed light on the practical applications of chirality and microcavities. PMID:25262881

Wavelength tunable MEMS VCSELs for OCT imaging

NASA Astrophysics Data System (ADS)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa; Semenova, Elizaveta; Hansen, Ole; Yvind, Kresten

2018-02-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

Effects of Aperture Size on Q factor and Shielding Effectiveness of a Cubic Resonator

NASA Astrophysics Data System (ADS)

Parr, Stefan; Chromy, Stephan; Dickmann, Stefan; Schaarschmidt, Martin

2017-09-01

The EMC properties of a cubic metallic shield are highly affected by its resonances. At the resonant frequencies, the shielding effectiveness (SE) collapses, which results in high field strengths inside the cavity. This can cause failure or even breakdown of electronic devices inside the shield. The resonant behaviour is mainly determined by the quality or Q factor of the shield. In this paper, the effects of the aperture size on the Q factor and the SE of an electrically large, cubic shield are analysed. At first, a method is developed in order to determine the Q factor based on the resonance behaviour of the shield in time domain. Only the first resonance of the shield is considered therefore. The results are evaluated for different aperture diameters and compared with theory for the Q factor. The dominant coupling mechanism of electromagnetic energy into the shield is thus identified. Then the effect of aperture size on the SE is analysed. The excitation of resonances is very probable if the interfering signal is an ultrawideband (UWB) pulse, which constitutes a typical intentional electromagnetic interference (IEMI) scenario. Therefore, the relation between aperture size and SE is analysed using the theory of the transient SE for a broadband signal with a constant spectral density distribution. The results show, that a <q>worst caseq> aperture size exists, where the SE has its minimum.

CMOS image sensors: State-of-the-art

NASA Astrophysics Data System (ADS)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

All-CMOS night vision viewer with integrated microdisplay

NASA Astrophysics Data System (ADS)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

MemAxes Visualization Software

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hardware advancements such as Intel's PEBS and AMD's IBS, as well as software developments such as the perf_event API in Linux have made available the acquisition of memory access samples with performance information. MemAxes is a visualization and analysis tool for memory access sample data. By mapping the samples to their associated code, variables, node topology, and application dataset, MemAxes provides intuitive views of the data.

The Development of the Differential MEMS Vector Hydrophone

PubMed Central

Zhang, Guojun; Liu, Mengran; Shen, Nixin; Wang, Xubo; Zhang, Wendong

2017-01-01

To solve the problem that MEMS vector hydrophones are greatly interfered with by the vibration of the platform and flow noise in applications, this paper describes a differential MEMS vector hydrophone that could simultaneously receive acoustic signals and reject acceleration signals. Theoretical and simulation analyses have been carried out. Lastly, a prototype of the differential MEMS vector hydrophone has been created and tested using a standing wave tube and a vibration platform. The results of the test show that this hydrophone has a high sensitivity, Mv = −185 dB (@ 500 Hz, 0 dB reference 1 V/μPa), which is almost the same as the previous MEMS vector hydrophones, and has a low acceleration sensitivity, Mv = −58 dB (0 dB reference 1 V/g), which has decreased by 17 dB compared with the previous MEMS vector hydrophone. The differential MEMS vector hydrophone basically meets the requirements of acoustic vector detection when it is rigidly fixed to a working platform, which lays the foundation for engineering applications of MEMS vector hydrophones. PMID:28594384

MEMS device for spacecraft thermal control applications

NASA Technical Reports Server (NTRS)

Swanson, Theordore D. (Inventor)

2003-01-01

A micro-electromechanical device that comprises miniaturized mechanical louvers, referred to as Micro Electro-Mechanical Systems (MEMS) louvers are employed to achieve a thermal control function for spacecraft and instruments. The MEMS louvers are another form of a variable emittance control coating and employ micro-electromechanical technology. In a function similar to traditional, macroscopic thermal louvers, the MEMS louvers of the present invention change the emissivity of a surface. With the MEMS louvers, as with the traditional macroscopic louvers, a mechanical vane or window is opened and closed to allow an alterable radiative view to space.

A Compact and Low-Cost MEMS Loudspeaker for Digital Hearing Aids.

PubMed

Sang-Soo Je; Rivas, F; Diaz, R E; Jiuk Kwon; Jeonghwan Kim; Bakkaloglu, B; Kiaei, S; Junseok Chae

2009-10-01

A microelectromechanical-systems (MEMS)-based electromagnetically actuated loudspeaker to reduce form factor, cost, and power consumption, and increase energy efficiency in hearing-aid applications is presented. The MEMS loudspeaker has multilayer copper coils, an NiFe soft magnet on a thin polyimide diaphragm, and an NdFeB permanent magnet on the perimeter. The coil impedance is measured at 1.5 Omega, and the resonant frequency of the diaphragm is located far from the audio frequency range. The device is driven by a power-scalable, 0.25-mum complementary metal-oxide semiconductor class-D SigmaDelta amplifier stage. The class-D amplifier is formed by a differential H-bridge driven by a single bit, pulse-density-modulated SigmaDelta bitstream at a 1.2-MHz clock rate. The fabricated MEMS loudspeaker generates more than 0.8-mum displacement, equivalent to 106-dB sound pressure level (SPL), with 0.13-mW power consumption. Driven by the SigmaDelta class-D amplifier, the MEMS loudspeaker achieves measured 65-dB total harmonic distortion (THD) with a measurement uncertainty of less than 10%. Energy-efficient and cost-effective advanced hearing aids would benefit from further miniaturization via MEMS technology. The results from this study appear very promising for developing a compact, mass-producible, low-power loudspeaker with sufficient sound generation for hearing-aid applications.

MEMS Reliability Assurance Guidelines for Space Applications

NASA Technical Reports Server (NTRS)

Stark, Brian (Editor)

1999-01-01

This guide is a reference for understanding the various aspects of microelectromechanical systems, or MEMS, with an emphasis on device reliability. Material properties, failure mechanisms, processing techniques, device structures, and packaging techniques common to MEMS are addressed in detail. Design and qualification methodologies provide the reader with the means to develop suitable qualification plans for the insertion of MEMS into the space environment.

High quality factor graphene varactors for wireless sensing applications

NASA Astrophysics Data System (ADS)

Koester, Steven J.

2011-10-01

A graphene wireless sensor concept is described. By utilizing thin gate dielectrics, the capacitance in a metal-insulator-graphene structure varies with charge concentration through the quantum capacitance effect. Simulations using realistic structural and transport parameters predict quality factors, Q, >60 at 1 GHz. When placed in series with an ideal inductor, a resonant frequency tuning ratio of 25% (54%) is predicted for sense charge densities ranging from 0.32 to 1.6 μC/cm2 at an equivalent oxide thickness of 2.0 nm (0.5 nm). The resonant frequency has a temperature sensitivity, df/dT, less than 0.025%/K for sense charge densities >0.32 μC/cm2.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Design of RF MEMS switches without pull-in instability

NASA Astrophysics Data System (ADS)

Proctor, W. Cyrus; Richards, Gregory P.; Shen, Chongyi; Skorczewski, Tyler; Wang, Min; Zhang, Jingyan; Zhong, Peng; Massad, Jordan E.; Smith, Ralph

2010-04-01

Micro-electro-mechanical systems (MEMS) switches for radio-frequency (RF) signals have certain advantages over solid-state switches, such as lower insertion loss, higher isolation, and lower static power dissipation. Mechanical dynamics can be a determining factor for the reliability of RF MEMS. The RF MEMS ohmic switch discussed in this paper consists of a plate suspended over an actuation pad by four double-cantilever springs. Closing the switch with a simple step actuation voltage typically causes the plate to rebound from its electrical contacts. The rebound interrupts the signal continuity and degrades the performance, reliability and durability of the switch. The switching dynamics are complicated by a nonlinear, electrostatic pull-in instability that causes high accelerations. Slow actuation and tailored voltage control signals can mitigate switch bouncing and effects of the pull-in instability; however, slow switching speed and overly-complex input signals can significantly penalize overall system-level performance. Examination of a balanced and optimized alternative switching solution is sought. A step toward one solution is to consider a pull-in-free switch design. In this paper, determine how simple RC-circuit drive signals and particular structural properties influence the mechanical dynamics of an RF MEMS switch designed without a pull-in instability. The approach is to develop a validated modeling capability and subsequently study switch behavior for variable drive signals and switch design parameters. In support of project development, specifiable design parameters and constraints will be provided. Moreover, transient data of RF MEMS switches from laser Doppler velocimetry will be provided for model validation tasks. Analysis showed that a RF MEMS switch could feasibly be designed with a single pulse waveform and no pull-in instability and achieve comparable results to previous waveform designs. The switch design could reliably close in a timely

An analysis of stepped trapezoidal-shaped microcantilever beams for MEMS-based devices

NASA Astrophysics Data System (ADS)

Ashok, Akarapu; Gangele, Aparna; Pal, Prem; Pandey, Ashok Kumar

2018-07-01

Microcantilever beams are the most widely used mechanical elements in the design and fabrication of MEMS/NEMS-based sensors and actuators. In this work, we have proposed a new microcantilever beam design based on a stepped trapezoidal-shaped microcantilever. Single-, double-, triple- and quadruple-stepped trapezoidal-shaped microcantilever beams along with conventional rectangular-shaped microcantilever beams were analysed experimentally, numerically and analytically. The microcantilever beams were fabricated from silicon dioxide material using wet bulk micromachining in 25 wt% TMAH. The length, width and thickness of the microcantilever beams were fixed at 200, 40 and 0.96 µm, respectively. A laser vibrometer was utilized to measure the resonance frequency and Q-factor of the microcantilever beams in vacuum as well as in ambient conditions. Furthermore, finite element analysis software, ANSYS, was employed to numerically analyse the resonance frequency, maximum deflection and torsional end rotation of all the microcantilever beam designs. The analytical and numerical resonance frequencies are found to be in good agreement with the experimental resonance frequencies. In the stepped trapezoidal-shaped microcantilever beams with an increasing number of steps, the Q-factor, maximum deflection and torsional end rotation were improved, whereas the resonance frequency was slightly reduced. Nevertheless, the resonance frequency is higher than the basic rectangular-shaped microcantilever beam. The observed quality factor, maximum deflection and torsional end rotation for a quadruple-stepped trapezoidal-shaped microcantilever are 38%, 41% and 52%, respectively, which are higher than those of conventional rectangular-shaped microcantilever beams. Furthermore, for an applied concentrated mass of 1 picogram on the cantilever surface, a greater shift in frequency is obtained for all the stepped trapezoidal-shaped microcantilever beam designs compared to the conventional

Fundamental performance differences of CMOS and CCD imagers: part V

NASA Astrophysics Data System (ADS)

Janesick, James R.; Elliott, Tom; Andrews, James; Tower, John; Pinter, Jeff

2013-02-01

Previous papers delivered over the last decade have documented developmental progress made on large pixel scientific CMOS imagers that match or surpass CCD performance. New data and discussions presented in this paper include: 1) a new buried channel CCD fabricated on a CMOS process line, 2) new data products generated by high performance custom scientific CMOS 4T/5T/6T PPD pixel imagers, 3) ultimate CTE and speed limits for large pixel CMOS imagers, 4) fabrication and test results of a flight 4k x 4k CMOS imager for NRL's SoloHi Solar Orbiter Mission, 5) a progress report on ultra large stitched Mk x Nk CMOS imager, 6) data generated by on-chip sub-electron CDS signal chain circuitry used in our imagers, 7) CMOS and CMOSCCD proton and electron radiation damage data for dose levels up to 10 Mrd, 8) discussions and data for a new class of PMOS pixel CMOS imagers and 9) future CMOS development work planned.

Demonstration of a wireless driven MEMS pond skater that uses EWOD technology

NASA Astrophysics Data System (ADS)

Mita, Y.; Li, Y.; Kubota, M.; Morishita, S.; Parkes, W.; Haworth, L. I.; Flynn, B. W.; Terry, J. G.; Tang, T.-B.; Ruthven, A. D.; Smith, S.; Walton, A. J.

2009-07-01

A silicon swimming robot or pond skating device has been demonstrated. It floats on liquid surfaces using surface tension and is capable of movement using electrowetting on dielectric (EWOD) based propulsion. Its dimensions are 6 × 9 mm and the driving mechanism involves first trapping air bubbles within the liquid onto the hydrophobic surface of the device. The air bubbles are then moved using EWOD, which provides the propulsion. The device employs a recently reported TaO EWOD technology enabling a driving voltage of ≈15 V, which is low enough for RF power transmission, thus facilitating wire-free movement. A wired version has been measured to move 1.35 mm in 168 ms (a speed of 8 mm s -1). This low voltage-EWOD (<15 V) device, fabricated using a CMOS compatible process, is believed to be the world's smallest swimming MEMS device that has no mechanical moving parts. The paper also reports results of EWOD droplet operation driven by wireless power transmission and demonstrates that such a wireless design can be successfully mounted on a floating EWOD device to produce movement.

Planar MEMS bio-chip for recording ion-channel currents in biological cells

NASA Astrophysics Data System (ADS)

Pandey, Santosh; Ferdous, Zannatul; White, Marvin H.

2003-10-01

We describe a planar MEMS silicon structure to record ion-channel currents in biological cells. The conventional method of performing an electrophysiological experiment, 'patch-clamping,' employs a glass micropipette. Despite careful treatments of the micropipette tip, such as fire polishing and surface coating, the latter is a source of thermal noise because of its inherent, tapered, conical structure, which gives rise to a large pipette resistance. This pipette resistance, when coupled with the self-capacitance of the biological cell, limits the available bandwidth and processing of fast transient, ion channel current pulses. In this work, we reduce considerably the pipette resistance with a planar micropipette on a silicon chip to permit the resolution of sub-millisecond, ion-channel pulses. We discuss the design topology of the device, describe the fabrication sequence, and highlight important critical issues. The design of an integrated on-chip CMOS instrumentation amplifier is described, which has a low-noise front-end, input-offset cancellation, correlated double sampling (CDS), and an ultra-high gain in the order of 1012V/A.

CMOS dot matrix microdisplay

NASA Astrophysics Data System (ADS)

Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

2011-03-01

Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

Structural tests using a MEMS acoustic emission sensor

NASA Astrophysics Data System (ADS)

Oppenheim, Irving J.; Greve, David W.; Ozevin, Didem; Hay, D. Robert; Hay, Thomas R.; Pessiki, Stephen P.; Tyson, Nathan L.

2006-03-01

In a collaborative project at Lehigh and Carnegie Mellon, a MEMS acoustic emission sensor was designed and fabricated as a suite of six resonant-type capacitive transducers in the frequency range between 100 and 500 kHz. Characterization studies showed good comparisons between predicted and experimental electro-mechanical behavior. Acoustic emission events, simulated experimentally in steel ball impact and in pencil lead break tests, were detected and source localization was demonstrated. In this paper we describe the application of the MEMS device in structural testing, both in laboratory and in field applications. We discuss our findings regarding housing and mounting (acoustic coupling) of the MEMS device with its supporting electronics, and we then report the results of structural testing. In all tests, the MEMS transducers were used in parallel with commercial acoustic emission sensors, which thereby serve as a benchmark and permit a direct observation of MEMS device functionality. All tests involved steel structures, with particular interest in propagation of existing cracks or flaws. A series of four laboratory tests were performed on beam specimens fabricated from two segments (Grade 50 steel) with a full penetration weld (E70T-4 electrode material) at midspan. That weld region was notched, an initial fatigue crack was induced, and the specimens were then instrumented with one commercial transducer and with one MEMS device; data was recorded from five individual transducers on the MEMS device. Under a four-point bending test, the beam displayed both inelastic behavior and crack propagation, including load drops associated with crack instability. The MEMS transducers detected all instability events as well as many or most of the acoustic emissions occurring during plasticity and stable crack growth. The MEMS transducers were less sensitive than the commercial transducer, and did not detect as many events, but the normalized cumulative burst count obtained

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

NASA Astrophysics Data System (ADS)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

COTS MEMS Flow-Measurement Probes

NASA Technical Reports Server (NTRS)

Redding, Chip; Smith, Floyd A.; Blank, Greg; Cruzan, Charles

2004-01-01

As an alternative to conventional tubing instrumentation for measuring airflow, designers and technicians at Glenn Research Center have been fabricating packaging components and assembling a set of unique probes that contain commercial off-the-shelf (COTS) microelectromechanical systems (MEMS) sensor chips. MEMS sensor chips offer some compelling advantages over standard macroscopic measurement devices. MEMS sensor technology has matured through mass production and use in the automotive and aircraft industries. At present, MEMS are the devices of choice for sensors in such applications as tire-pressure monitors, altimeters, pneumatic controls, cable leak detectors, and consumer appliances. Compactness, minimality of power demand, rugged construction, and moderate cost all contribute to making MEMS sensors attractive for instrumentation for future research. Conventional macroscopic flow-measurement instrumentation includes tubes buried beneath the aerodynamic surfaces of wind-tunnel models or in wind-tunnel walls. Pressure is introduced at the opening of each such tube. The pressure must then travel along the tube before reaching a transducer that generates an electronic signal. The lengths of such tubes typically range from 20 ft (approx.= 6 m) to hundreds of feet (of the order of 100 m). The propagation of pressure signals in the tubes damps the signals considerably and makes it necessary to delay measurements until after test rigs have reached steady-state operation. In contrast, a MEMS pressure sensor that generates electronic output can take readings continuously under dynamic conditions in nearly real time. In order to use stainless-steel tubing for pressure measurements, it is necessary to clean many tubes, cut them to length, carefully install them, delicately deburr them, and splice them. A cluster of a few hundred 1/16-in.- (approx.=1.6-mm-) diameter tubes (such clusters are common in research testing facilities) can be several inches (of the order of 10

Vibration nullification of MEMS device using input shaping

NASA Astrophysics Data System (ADS)

Jordan, Scott; Lawrence, Eric M.

2003-07-01

The active silicon microstructures known as Micro-Electromechanical Systems (MEMS) are improving many existing technologies through simplification and cost reduction. Many industries have already capitalized on MEMS technology such as those in fields as diverse as telecommunications, computing, projection displays, automotive safety, defense and biotechnology. As they grow in sophistication and complexity, the familiar pressures to further reduce costs and increase performance grow for those who design and manufacture MEMS devices and the engineers who specify them for their end applications. One example is MEMS optical switches that have evolved from simple, bistable on/off elements to microscopic, freelypositionable beam steering optics. These can be actuated to discrete angular positions or to continuously-variable angular states through applied command signals. Unfortunately, elaborate closed-loop actuation schemes are often necessitated in order to stabilize the actuation. Furthermore, preventing one actuated micro-element from vibrationally cross-coupling with its neighbors is another reason costly closed-loop approaches are thought to be necessary. The Laser Doppler Vibrometer (LDV) is a valuable tool for MEMS characterization that provides non-contact, real-time measurements of velocity and/or displacement response. The LDV is a proven technology for production metrology to determine dynamical behaviors of MEMS elements, which can be a sensitive indicator of manufacturing variables such as film thickness, etch depth, feature tolerances, handling damage and particulate contamination. They are also important for characterizing the actuation dynamics of MEMS elements for implementation of a patented controls technique called Input Shaping«, which we show here can virtually eliminate the vibratory resonant response of MEMS elements even when subjected to the most severe actuation profiles. In this paper, we will demonstrate the use of the LDV to determine how

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

Diffraction-Based Optical Switching with MEMS

DOE PAGES

Blanche, Pierre-Alexandre; LaComb, Lloyd; Wang, Youmin; ...

2017-04-19

In this article, we are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two implementations have been demonstrated, one using the Texas Instruments DLP (Digital Light Processing), and the other an LCoS-based (Liquid Crystal on Silicon) SLM (Spatial Light Modulator). These switches demonstrated the benefit of diffraction, by independently achieving high speed, efficiency, and high number of ports.more » We also demonstrated for the first time that PSK (Phase Shift Keying) modulation format can be used with diffraction-based devices. To be truly effective in diffraction mode, the MEMS pixels should modulate the phase of the incident light. We are presenting our past and current efforts to manufacture a new type of MEMS where the pixels are moving in the vertical direction. The original structure is a 32 x 32 phase modulator array with high contrast grating pixels, and we are introducing a new sub-wavelength linear array capable of a 310 kHz modulation rate« less

Diffraction-Based Optical Switching with MEMS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blanche, Pierre-Alexandre; LaComb, Lloyd; Wang, Youmin

In this article, we are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two implementations have been demonstrated, one using the Texas Instruments DLP (Digital Light Processing), and the other an LCoS-based (Liquid Crystal on Silicon) SLM (Spatial Light Modulator). These switches demonstrated the benefit of diffraction, by independently achieving high speed, efficiency, and high number of ports.more » We also demonstrated for the first time that PSK (Phase Shift Keying) modulation format can be used with diffraction-based devices. To be truly effective in diffraction mode, the MEMS pixels should modulate the phase of the incident light. We are presenting our past and current efforts to manufacture a new type of MEMS where the pixels are moving in the vertical direction. The original structure is a 32 x 32 phase modulator array with high contrast grating pixels, and we are introducing a new sub-wavelength linear array capable of a 310 kHz modulation rate« less

Theoretical performance analysis for CMOS based high resolution detectors.

PubMed

Jain, Amit; Bednarek, Daniel R; Rudin, Stephen

2013-03-06

High resolution imaging capabilities are essential for accurately guiding successful endovascular interventional procedures. Present x-ray imaging detectors are not always adequate due to their inherent limitations. The newly-developed high-resolution micro-angiographic fluoroscope (MAF-CCD) detector has demonstrated excellent clinical image quality; however, further improvement in performance and physical design may be possible using CMOS sensors. We have thus calculated the theoretical performance of two proposed CMOS detectors which may be used as a successor to the MAF. The proposed detectors have a 300 μm thick HL-type CsI phosphor, a 50 μm-pixel CMOS sensor with and without a variable gain light image intensifier (LII), and are designated MAF-CMOS-LII and MAF-CMOS, respectively. For the performance evaluation, linear cascade modeling was used. The detector imaging chains were divided into individual stages characterized by one of the basic processes (quantum gain, binomial selection, stochastic and deterministic blurring, additive noise). Ranges of readout noise and exposure were used to calculate the detectors' MTF and DQE. The MAF-CMOS showed slightly better MTF than the MAF-CMOS-LII, but the MAF-CMOS-LII showed far better DQE, especially for lower exposures. The proposed detectors can have improved MTF and DQE compared with the present high resolution MAF detector. The performance of the MAF-CMOS is excellent for the angiography exposure range; however it is limited at fluoroscopic levels due to additive instrumentation noise. The MAF-CMOS-LII, having the advantage of the variable LII gain, can overcome the noise limitation and hence may perform exceptionally for the full range of required exposures; however, it is more complex and hence more expensive.

Analysis of autism susceptibility gene loci on chromosomes 1p, 4p, 6q, 7q, 13q, 15q, 16p, 17q, 19q and 22q in Finnish multiplex families.

PubMed

Auranen, M; Nieminen, T; Majuri, S; Vanhala, R; Peltonen, L; Järvelä, I

2000-05-01

The role of genetic factors in the etiology of the autistic spectrum of disorders has clearly been demonstrated. Ten chromosomal regions, on chromosomes 1p, 4p, 6q, 7q, 13q, 15q, 16p, 17q, 19q and 22q have potentially been linked to autism.1-8 We have analyzed these chromosomal regions in a total of 17 multiplex families with autism originating from the isolated Finnish population by pairwise linkage analysis and sib-pair analysis. Mild evidence for putative contribution was found only with the 1p chromosomal region in the susceptibility to autism. Our data suggest that additional gene loci exist for autism which will be detectable in and even restricted to the isolated Finnish population.

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

NASA Technical Reports Server (NTRS)

Cliff, R. A.; Danchenko, V.; Stassinopoulos, E. G.; Sing, M.; Brucker, G. J.; Ohanian, R. S.

1976-01-01

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Fully CMOS-compatible titanium nitride nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Briggs, Justin A., E-mail: jabriggs@stanford.edu; Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305; Naik, Gururaj V.

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements onmore » plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.« less

Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

PubMed Central

Zhang, Wen-Ming; Meng, Guang; Chen, Di

2007-01-01

Electrostatic micro-electro-mechanical system (MEMS) is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

MEMS FPI-based smartphone hyperspectral imager

NASA Astrophysics Data System (ADS)

Rissanen, Anna; Saari, Heikki; Rainio, Kari; Stuns, Ingmar; Viherkanto, Kai; Holmlund, Christer; Näkki, Ismo; Ojanen, Harri

2016-05-01

This paper demonstrates a mobile phone- compatible hyperspectral imager based on a tunable MEMS Fabry-Perot interferometer. The realized iPhone 5s hyperspectral imager (HSI) demonstrator utilizes MEMS FPI tunable filter for visible-range, which consist of atomic layer deposited (ALD) Al2O3/TiO2-thin film Bragg reflectors. Characterization results for the mobile phone hyperspectral imager utilizing MEMS FPI chip optimized for 500 nm is presented; the operation range is λ = 450 - 550 nm with FWHM between 8 - 15 nm. Also a configuration of two cascaded FPIs (λ = 500 nm and λ = 650 nm) combined with an RGB colour camera is presented. With this tandem configuration, the overall wavelength tuning range of MEMS hyperspectral imagers can be extended to cover a larger range than with a single FPI chip. The potential applications of mobile hyperspectral imagers in the vis-NIR range include authentication, counterfeit detection and potential health/wellness and food sensing applications.

Hybrid power systems for autonomous MEMS

NASA Astrophysics Data System (ADS)

Bennett, Daniel M.; Selfridge, Richard H.; Humble, Paul; Harb, John N.

2001-08-01

This paper describes the design of a hybrid power system for use with autonomous MEMS and other microdevices. This hybrid power system includes energy conversion and storage along with an electronic system for managing the collection and distribution of power. It offers flexibility and longevity in a compact package. The hybrid power system couples a silicon solar cell with a microbattery specially designed for MEMS applications. We have designed a control/interface charging circuit to be compatible with a MEMS duty cycle. The design permits short pulses of 'high' power while taking care to avoid excessive charging or discharging of the battery. Charging is carefully controlled to provide a balance between acceptably small charging times and a charging profile that extends battery life. Our report describes the charging of our Ni/Zn microbatteries using solar cells. To date we have demonstrated thousands of charge/discharge cycles of a simulated MEMS duty cycle.

Evolving MEMS Resonator Designs for Fabrication

NASA Technical Reports Server (NTRS)

Hornby, Gregory S.; Kraus, William F.; Lohn, Jason D.

2008-01-01

Because of their small size and high reliability, microelectromechanical (MEMS) devices have the potential to revolution many areas of engineering. As with conventionally-sized engineering design, there is likely to be a demand for the automated design of MEMS devices. This paper describes our current status as we progress toward our ultimate goal of using an evolutionary algorithm and a generative representation to produce designs of a MEMS device and successfully demonstrate its transfer to an actual chip. To produce designs that are likely to transfer to reality, we present two ways to modify evaluation of designs. The first is to add location noise, differences between the actual dimensions of the design and the design blueprint, which is a technique we have used for our work in evolving antennas and robots. The second method is to add prestress to model the warping that occurs during the extreme heat of fabrication. In future we expect to fabricate and test some MEMS resonators that are evolved in this way.

A dual-mode highly efficient class-E stimulator controlled by a low-Q class-E power amplifier through duty cycle.

PubMed

Chiu, Hung-Wei; Lu, Chien-Chi; Chuang, Jia-min; Lin, Wei-Tso; Lin, Chii-Wann; Kao, Ming-Chien; Lin, Mu-Lien

2013-06-01

This paper presents the design flow of two high-efficiency class-E amplifiers for the implantable electrical stimulation system. The implantable stimulator is a high-Q class-E driver that delivers a sine-wave pulsed radiofrequency (PRF) stimulation, which was verified to have a superior efficacy in pain relief to a square wave. The proposed duty-cycle-controlled class-E PRF driver designed with a high-Q factor has two operational modes that are able to achieve 100% DC-AC conversion, and involves only one switched series inductor and an unchanged parallel capacitor. The measured output amplitude under low-voltage (LV) mode using a 22% duty cycle was 0.98 V with 91% efficiency, and under high-voltage (HV) mode using a 47% duty cycle was 2.95 V with 92% efficiency. These modes were inductively controlled by a duty-cycle detector, which can detect the duty-cycle modulated signal generated from the external complementary low-Q class-E power amplifier (PA). The design methodology of the low-Q inductive interface for a non-50% duty cycle is presented. The experimental results exhibits that the 1.5-V PA that consumes DC power of 14.21 mW was able to deliver a 2.9-V sine wave to a 500 Ω load. The optimal 60% drain efficiency of the system from the PA to the load was obtained at a 10-mm coupling distance.

EDITORIAL: MEMS in biology and medicine MEMS in biology and medicine

NASA Astrophysics Data System (ADS)

Pruitt, Beth L.; Herr, Amy E.

2011-05-01

Stimulating—the first word that springs to mind regarding the emerging and expanding role of MEMS in biological inquiry. When invited to guest-edit this special issue on 'MEMS in biology and medicine' for JMM, we jumped at the opportunity. Partly owing to the breadth of the stimulating research in this nascent area and partly owing to the stimulating of biological function made possible with MEMS accessible length and time scales, we were eager to assemble manuscripts detailing some of the most cutting edge biological research being conducted around the globe. In addition to cutting edge engineering, this special issue features challenging biological questions addressed with innovative MEMS technologies. Topics span from Yetisen and colleagues' inquiry into quantifying pollen tube behaviour in response to pistil tissues [1] to Morimoto and colleagues' engineering efforts to produce monodisperse droplets capable of encapsulating single cells (without surface modification) [2]. Questions are bold, including a means to achieve therapeutically-relevant scaling for enrichment of leukocytes from blood (Inglis et al [3]), assessing the dependence of Escherichia coli biofilm formation on bacterial signalling (Meyer et al [4]), and elucidation of adhesion dynamics of circulating tumour cells (Cheung et al [5]) among others. Technologies are diverse, including microfabricated magnetic actuators (Lee et al [6]), stimuli-responsive polymer nanocomposites (Hess et al [7]), and SU-8 electrothermal microgrippers (Chu et al [8]) to name but a few. Contributing authors do indeed span a large swathe of the globe, with contributions from Australia, Italy, China, Canada, Denmark, Japan, the USA and numerous other locations. Collaboration finds a home here—with researchers from macromolecular science and electrical engineering collaborating with the Veterans Affairs Medical Center or neurosurgery researchers working with biological and electrical engineers. The questions posed by

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

PubMed Central

Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

PubMed

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Q-factor improvement of degenerate four-wave-mixing regenerators for ASE degraded signals

NASA Astrophysics Data System (ADS)

Lu, Hang; Wu, Bao-jian; Geng, Yong; Zhou, Xing-yu; Sun, Fan

2017-11-01

All-optical regenerators can be used to suppress amplified spontaneous emission (ASE) noise introduced by cascaded erbium doped fiber amplifiers (EDFAs) in optical fiber communication systems and lead to the improvement of optical receiver sensitivity. By introducing the Q-factor transfer function (QTF), we evaluate the Q-factor performance of degenerate four-wave mixing (DFWM) regenerators with clock pump and reveal the differences between the optimal input powers determined from the static and dynamic power tranfer function (PTF) and the QTF curves. Our simulation shows that the clock-pump regnerator is capable of improving the Q-facor and receiver sensitivity for 40 Gbit/s ASE-degraded return-to-zero on-off keying (RZ-OOK) signal by 2.58 dB and 4.2 dB, respectively.

The effect of Q factor on gross mechanical efficiency and muscular activation in cycling.

PubMed

Disley, B X; Li, F-X

2014-02-01

Unexplored in scientific literature, Q Factor describes the horizontal width between bicycle pedals and determines where the foot is laterally positioned throughout the pedal stroke. The aim of the study was to determine whether changing Q Factor has a beneficial effect upon cycling efficiency and muscular activation. A total of 24 trained cyclists (11 men, 13 women; VO2max 57.5 ml·kg/min ± 6.1) pedaled at 60% of peak power output for 5 min at 90 rpm using Q Factors of 90, 120, 150, and 180 mm. Power output and gas were collected and muscular activity of the gastrocnemius medialis (GM), tibialis anterior (TA), vastus medialis (VM), and vastus lateralis (VL) measured using surface electromyography. There was a significant increase (P < 0.006) in gross mechanical efficiency (GME) for 90 and 120 mm (both 19.38%) compared with 150 and 180 mm (19.09% and 19.05%), representing an increase in external mechanical work performed of approximately 4-5 W (1.5-2.0%) at submaximal power outputs. There was no significant difference in the level of activity or timing of activation of the GM, TA, VM, and VL between Q Factors. Other muscles used in cycling, and possibly an improved application of force during the pedal stroke may play a role in the observed increase in GME with narrower Q Factors. © 2012 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Dynamic MEMS devices for multi-axial fatigue and elastic modulus measurement

NASA Astrophysics Data System (ADS)

White, Carolyn D.; Xu, Rui; Sun, Xiaotian; Komvopoulos, Kyriakos

2003-01-01

For reliable MEMS device fabrication and operation, there is a continued demand for precise characterization of materials at the micron scale. This paper presents a novel material characterization device for fatigue lifetime testing. The fatigue specimen is subjected to multi-axial loading, which is typical of most MEMS devices. Polycrystalline silicon (polysilicon) fatigue devices were fabricated using the MUMPS process with a three layer mask process ground plane, anchor, and structural layer of polysilicon. A fatigue device consists of two or three beams, attached to a rotating ring and anchored to the substrate on each end. In order to generate a sufficiently large stress, the fatigue devices were tested in resonance to produce a von Mises equivalent stress as high as 1 GPa, which is in the fracture strength range reported for polysilicon. A further increase of the stress in the beam specimens was obtained by introducing a notch with a focused ion beam. The notch resulted into a stress concentration factor of about 3.8, thereby producing maximum von Mises equivalent stress in the range of 1 through 4 GPa. This study provides insight into multi-axial fatigue testing under typical MEMS conditions and additional information about micron-scale polysilicon mechanical behavior, which is the current basic building material for MEMS devices.

Fundamental Problems of Hybrid CMOS/Nanodevice Circuits

DTIC Science & Technology

2010-12-14

Development of an area-distributed CMOS/nanodevice interface We have carried out the first design of CMOS chips for the CMOS/nanodevice integration, and...got them fabricated in IBM’ 180-nm 7RF process (via MOSIS, Inc. silicon foundry). Each 44 mm2 chip assembly of the design consists of 4 component... chips , merged together for processing convenience. Each 22 mm2 component chip features two interface arrays, with 1010 vias each, with chip’s MOSFETs

Packaging of MEMS/MOEMS and nanodevices: reliability, testing, and characterization aspects

NASA Astrophysics Data System (ADS)

Tekin, Tolga; Ngo, Ha-Duong; Wittler, Olaf; Bouhlal, Bouchaib; Lang, Klaus-Dieter

2011-02-01

The last decade witnessed an explosive growth in research and development efforts devoted to MEMS devices and packaging. The successfully developed MEMS devices are, for example inkjet, pressure sensors, silicon microphones, accelerometers, gyroscopes, MOEMS, micro fuel cells and emerging MEMS. For the next decade, MEMS/MOEMS and nanodevice based products will penetrate into IT, telecommunications, automotive, defense, life sciences, medical and implantable applications. Forecasts say the MEMS market to be $14 billion by 2012. The packaging cost of MEMS/MOEMS products in general is about 70 percent. Unlike today's electronics IC packaging, their packaging are custom-built and difficult due to the moving structural elements. In order for the moving elements of a MEMS device to move effectively in a well-controlled atmosphere, hermetic sealing of the MEMS device in a cap is necessary. For some MEMS devices, such as resonators and gyroscopes, vacuum packaging is required. Usually, the cap is processed at the wafer level, and thus MEMS packaging is truly a wafer level packaging. In terms of MEMS/MOEMS and nanodevice packaging, there are still many critical issues need to be addressed due to the increasing integration density supported by 3D heterogeneous integration of multi-physic components/layers consisting of photonics, electronics, rf, plasmonics, and wireless. The infrastructure of MEMS/MOEMS and nanodevices and their packaging is not well established yet. Generic packaging platform technologies are not available. Some of critical issues have been studied intensively in the last years. In this paper we will discuss about processes, reliability, testing and characterization of MEMS/MOEMS and nanodevice packaging.

Cargo Movement Operations System (CMOS). Software Test Description

DTIC Science & Technology

1990-10-28

resulting in errors in paragraph numbers and titles. CMOS PMO ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO [ ] COMMENT DISPOSITION...location to test the update of the truck manifest. CMOS PMO ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO [ ] COMMENT DISPOSITION...CMOS PMO ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO ] COMMENT DISPOSITION: COMMENT STATUS: OPEN [ ] CLOSED [

Inertial mass sensing with low Q-factor vibrating microcantilevers

NASA Astrophysics Data System (ADS)

Adhikari, S.

2017-10-01

Mass sensing using micromechanical cantilever oscillators has been established as a promising approach. The scientific principle underpinning this technique is the shift in the resonance frequency caused by the additional mass in the dynamic system. This approach relies on the fact that the Q-factor of the underlying oscillator is high enough so that it does not significantly affect the resonance frequencies. We consider the case when the Q-factor is low to the extent that the effect of damping is prominent. It is shown that the mass sensing can be achieved using a shift in the damping factor. We prove that the shift in the damping factor is of the same order as that of the resonance frequency. Based on this crucial observation, three new approaches have been proposed, namely, (a) mass sensing using frequency shifts in the complex plane, (b) mass sensing from damped free vibration response in the time domain, and (c) mass sensing from the steady-state response in the frequency domain. Explicit closed-form expressions relating absorbed mass with changes in the measured dynamic properties have been derived. The rationale behind each new method has been explained using non-dimensional graphical illustrations. The new mass sensing approaches using damped dynamic characteristics can expand the current horizon of micromechanical sensing by incorporating a wide range of additional measurements.

Nanopore-CMOS Interfaces for DNA Sequencing

PubMed Central

Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

2016-01-01

DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces. PMID:27509529

Nanopore-CMOS Interfaces for DNA Sequencing.

PubMed

Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

2016-08-06

DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces.

Monolithic integration of a MOSFET with a MEMS device

DOEpatents

Bennett, Reid; Draper, Bruce

2003-01-01

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

MemAxes: Visualization and Analytics for Characterizing Complex Memory Performance Behaviors.

PubMed

Gimenez, Alfredo; Gamblin, Todd; Jusufi, Ilir; Bhatele, Abhinav; Schulz, Martin; Bremer, Peer-Timo; Hamann, Bernd

2018-07-01

Memory performance is often a major bottleneck for high-performance computing (HPC) applications. Deepening memory hierarchies, complex memory management, and non-uniform access times have made memory performance behavior difficult to characterize, and users require novel, sophisticated tools to analyze and optimize this aspect of their codes. Existing tools target only specific factors of memory performance, such as hardware layout, allocations, or access instructions. However, today's tools do not suffice to characterize the complex relationships between these factors. Further, they require advanced expertise to be used effectively. We present MemAxes, a tool based on a novel approach for analytic-driven visualization of memory performance data. MemAxes uniquely allows users to analyze the different aspects related to memory performance by providing multiple visual contexts for a centralized dataset. We define mappings of sampled memory access data to new and existing visual metaphors, each of which enabling a user to perform different analysis tasks. We present methods to guide user interaction by scoring subsets of the data based on known performance problems. This scoring is used to provide visual cues and automatically extract clusters of interest. We designed MemAxes in collaboration with experts in HPC and demonstrate its effectiveness in case studies.

Pre-release plastic packaging of MEMS and IMEMS devices

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

A method is disclosed for pre-release plastic packaging of MEMS and IMEMS devices. The method can include encapsulating the MEMS device in a transfer molded plastic package. Next, a perforation can be made in the package to provide access to the MEMS elements. The non-ablative material removal process can include wet etching, dry etching, mechanical machining, water jet cutting, and ultrasonic machining, or any combination thereof. Finally, the MEMS elements can be released by using either a wet etching or dry plasma etching process. The MEMS elements can be protected with a parylene protective coating. After releasing the MEMS elements, an anti-stiction coating can be applied. The perforating step can be applied to both sides of the device or package. A cover lid can be attached to the face of the package after releasing any MEMS elements. The cover lid can include a window for providing optical access. The method can be applied to any plastic packaged microelectronic device that requires access to the environment, including chemical, pressure, or temperature-sensitive microsensors; CCD chips, photocells, laser diodes, VCSEL's, and UV-EPROMS. The present method places the high-risk packaging steps ahead of the release of the fragile portions of the device. It also provides protection for the die in shipment between the molding house and the house that will release the MEMS elements and subsequently treat the surfaces.

Standard semiconductor packaging for high-reliability low-cost MEMS applications

NASA Astrophysics Data System (ADS)

Harney, Kieran P.

2005-01-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

Standard semiconductor packaging for high-reliability low-cost MEMS applications

NASA Astrophysics Data System (ADS)

Harney, Kieran P.

2004-12-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

Evaluation of 95 gpm Inductors for Aqueous Film Forming Foam,

DTIC Science & Technology

1984-04-30

AQUEOUS FILM FORMING FOAM BACKGROUND/INTRODUCTION Early History The use of Aqueous Film Forming Foam ( AFFF ...vadIdniybybok46141 SECURITY CLASSIFICATION~ OF THIS PAGE 11. TITL (Include Secuit Cuaif~los) EVALUATION 0F795 GPM INDUCTORS FOR AQUEOUS FILM FORMING ...AD-A141 242 EVALUATION OF 95 GPM INDUCORG SEOR AQUEOUS FIL FORMING 1/GAM U) HUGHES ASSOCI A F S NC KEN S INO ON M0AD A14 24 RN GIE ETAL 3 00PR

MEMS testing and applications in automotive and aerospace industries

NASA Astrophysics Data System (ADS)

Ma, Zhichun; Chen, Xuyuan

2009-05-01

MEMS technology combines micromachining and integrated circuit fabrication technologies to produce highly reliable MEMS transducers. This paper presents an overview of MEMS transducers applications, particularly in automotive and aerospace industries, which includes inertia sensors for safety, navigation, and guidance control, thermal anemometer for temperature and heat-flux sensors in engine applications, MEMS atomizers for fuel injection, and micromachined actuators for flow control applications. Design examples for the devices in above mentioned applications are also presented and test results are given.

Dual Q-switched laser outputs from a single lasing medium using an intracavity MEMS micromirror array.

PubMed

Bauer, Ralf; Lubeigt, Walter; Uttamchandani, Deepak

2012-09-01

An intracavity array of individually controlled microelectromechanical system scanning micromirrors was used to actively Q-switch a single side-pumped Nd:YAG gain medium. Two equal power independent laser outputs were simultaneously obtained by separate actuation of two adjacent micromirrors with a combined average output power of 125 mW. Pulse durations of 28 ns FWHM at 8.7 kHz repetition frequency and 34 ns FWHM at 7.9 kHz repetition frequency were observed for the two output beams with beam quality factors M2 of 1.2 and 1.1 and peak powers of 253 W and 232 W, respectively.

Stress insensitive multilayer chip inductor with ferrite core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishwas, B.; Madhuri, W., E-mail: madhuriw12@gmail.com; Rao, N. Madhusudan

2015-06-24

Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} is synthesized by sol gel auto combustion technique. The obtained ferrite powder is finally sintered in a microwave furnace at 850°C. Multilayer chip inductor (MLCI) of two layers is prepared by screen printing technique. The sintered ferrite is characterized by X-ray diffraction. The frequency response of dielectric constant is studied in the frequency range of 100Hz to 5MHz. Dielectric polarization is discussed in the light of Maxwell-Wagner interfacial polarization. The prepared MLCI is studied for stress sensitivity in the range of 0 to 8 MPa.

MEMS sensing and control: an aerospace perspective

NASA Astrophysics Data System (ADS)

Schoess, Jeffrey N.; Arch, David K.; Yang, Wei; Cabuz, Cleopatra; Hocker, Ben; Johnson, Burgess R.; Wilson, Mark L.

2000-06-01

Future advanced fixed- and rotary-wing aircraft, launch vehicles, and spacecraft will incorporate smart microsensors to monitor flight integrity and provide flight control inputs. This paper provides an overview of Honeywell's MEMS technologies for aerospace applications of sensing and control. A unique second-generation polysilicon resonant microbeam sensor design is described. It incorporates a micron-level vacuum-encapsulated microbeam to optically sense aerodynamic parameters and to optically excite the sensor pick off: optically excited self-resonant microbeams form the basis for a new class of versatile, high- performance, low-cost MEMS sensors that uniquely combine silicon microfabrication technology with optoelectronic technology that can sense dynamic pressure, acceleration forces, acoustic emission, and many other aerospace parameters of interest. Honeywell's recent work in MEMS tuning fork gyros for inertial sensing and a MEMS free- piston engine are also described.

Improvement of vibration energy harvesters mechanical Q-factor through high density proof mass integration

NASA Astrophysics Data System (ADS)

Dompierre, A.; Fréchette, L. G.

2016-11-01

This paper reports on improvement of the mechanical Q-factor of resonant energy harvesters at ambient pressure via the use of tungsten proof masses by evaluating the impact of the mass size and density on the squeeze film damping. To this end, a simplified model is first proposed to evaluate cantilever beams deflection and the resulting fluid pressure build up between the mass and a near surface. The model, which accounts for simultaneous transverse and rotational motion of very long tip masses as well as for 2D fluid flow in the gap, is used to extract a scaling law for the device fluidic Q-factor Qf. This law states that Qf can be improved by either increasing the linear mass density of the tip mass or by reducing the side lengths compared to the gap height. The first approach is validated experimentally by adding a tungsten proof mass on a silicon based device and observing an improvement of the Q-factor by 103%, going from 430 to 871, while the resonance frequency drops from 457 to 127 Hz. In terms of fluidic Q-factor, this represents an increase from 562 to 1673. These results successfully demonstrate the benefits of integrating a tungsten mass to reduce the fluid losses while potentially reducing the device footprint.

MEMS scanning micromirror for optical coherence tomography.

PubMed

Strathman, Matthew; Liu, Yunbo; Keeler, Ethan G; Song, Mingli; Baran, Utku; Xi, Jiefeng; Sun, Ming-Ting; Wang, Ruikang; Li, Xingde; Lin, Lih Y

2015-01-01

This paper describes an endoscopic-inspired imaging system employing a micro-electromechanical system (MEMS) micromirror scanner to achieve beam scanning for optical coherence tomography (OCT) imaging. Miniaturization of a scanning mirror using MEMS technology can allow a fully functional imaging probe to be contained in a package sufficiently small for utilization in a working channel of a standard gastroesophageal endoscope. This work employs advanced image processing techniques to enhance the images acquired using the MEMS scanner to correct non-idealities in mirror performance. The experimental results demonstrate the effectiveness of the proposed technique.

MEMS scanning micromirror for optical coherence tomography

PubMed Central

Strathman, Matthew; Liu, Yunbo; Keeler, Ethan G.; Song, Mingli; Baran, Utku; Xi, Jiefeng; Sun, Ming-Ting; Wang, Ruikang; Li, Xingde; Lin, Lih Y.

2014-01-01

This paper describes an endoscopic-inspired imaging system employing a micro-electromechanical system (MEMS) micromirror scanner to achieve beam scanning for optical coherence tomography (OCT) imaging. Miniaturization of a scanning mirror using MEMS technology can allow a fully functional imaging probe to be contained in a package sufficiently small for utilization in a working channel of a standard gastroesophageal endoscope. This work employs advanced image processing techniques to enhance the images acquired using the MEMS scanner to correct non-idealities in mirror performance. The experimental results demonstrate the effectiveness of the proposed technique. PMID:25657887

Tunable Q-factor silicon microring resonators for ultra-low power parametric processes.

PubMed

Strain, Michael J; Lacava, Cosimo; Meriggi, Laura; Cristiani, Ilaria; Sorel, Marc

2015-04-01

A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3  dB at an ultra-low on-chip pump power of 0.7 mW.

Interstitial deletion of chromosome 1q [del(1)(q24q25.3)] identified by fluorescence in situ hybridization and gene dosage analysis of apolipoprotein A-II, coagulation factor V, and antithrombin III

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takano, Takako; Yamanouchi, Yasuko; Mori, Yosuke

We report on a 12-month-old Japanese boy with an interstitial deletion of the long-arm of chromosome 1 and meningomyelocele, hydrocephalus, anal atresia, atrial septal defect, left renal agenesis, bilateral cryptorchidism, talipes equinovarus, low birth weight, growth/developmental retardation, and many minor anomalies. By conventional GTG-banding, his karyotype was first interpreted as 46,XY,de1(1)(q23q24), but it was corrected as 46,XY.ish del(1)(q24q25.3) by fluorescence in situ hybridization using 11 known cosmid clones as probes. His serum levels of apolipoprotein A-II (gene symbol: APOA2, previously assigned to 1q21-q23) and coagulation factor V (F5, 1q21-q25) were normal, while serum concentration and activity of antithrombin III (AT3,more » 1q23-q25.1) was low. The results indicated that localization of APOA2 and F5 are proximal to the deleted region and AT3 is located within the deletion extent in the patient. 16 refs., 4 figs.« less

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Amorphous Diamond for MEMS

NASA Astrophysics Data System (ADS)

Sullivan, J. P.

2002-03-01

Pure carbon films can exhibit surprising complexity in structure and properties. Amorphous diamond (tetrahedrally-coordinated amorphous carbon) is an amorphous quasi-two phase mixture of four-fold and three-fold coordinated carbon which is produced by pulsed excimer laser deposition, an energetic deposition process that leads to film growth by sub-surface carbon implantation and the creation of local metastability in carbon bonding. Modest annealing, < 900K, produces significant irreversible strain relaxation which is thermally activated with activation energies ranging from < 1 eV to > 2 eV. During annealing the material remains amorphous, but there is a detectable increase in medium-range order as measured by fluctuation microscopy. The strain relaxation permits the residual strain in the films to be reduced to < 0.00001, which is a critical requirement for the fabrication of microelectromechanical systems (MEMS). Amorphous diamond MEMS have been fabricated in order to evaluate the mechanical properties of this material under tension and flexure, and this has enabled the determination of elastic modulus (800 GPa), tensile strength (8 GPa), and fracture toughness (8 MPa m^1/2). In addition, amorphous diamond MEMS structures have been fabricated to measure internal dissipation and surface adhesion. The high hardness and strength and hydrophobic nature of the surface makes this material particularly suitable for the fabrication of high wear resistance and low stiction MEMS. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Co., for the U.S. Dept. of Energy under contract DE-AC04-94AL85000.

Calibration of High Frequency MEMS Microphones

NASA Technical Reports Server (NTRS)

Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

2007-01-01

Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

MEMS microphone innovations towards high signal to noise ratios (Conference Presentation) (Plenary Presentation)

NASA Astrophysics Data System (ADS)

Dehé, Alfons

2017-06-01

After decades of research and more than ten years of successful production in very high volumes Silicon MEMS microphones are mature and unbeatable in form factor and robustness. Audio applications such as video, noise cancellation and speech recognition are key differentiators in smart phones. Microphones with low self-noise enable those functions. Backplate-free microphones enter the signal to noise ratios above 70dB(A). This talk will describe state of the art MEMS technology of Infineon Technologies. An outlook on future technologies such as the comb sensor microphone will be given.

Signal bi-amplification in networks of unidirectionally coupled MEMS

NASA Astrophysics Data System (ADS)

Tchakui, Murielle Vanessa; Woafo, Paul; Colet, Pere

2016-01-01

The purpose of this paper is to analyze the propagation and the amplification of an input signal in networks of unidirectionally coupled micro-electro-mechanical systems (MEMS). Two types of external excitations are considered: sinusoidal and stochastic signals. We show that sinusoidal signals are amplified up to a saturation level which depends on the transmission rate and despite MEMS being nonlinear the sinusoidal shape is well preserved if the number of MEMS is not too large. However, increasing the number of MEMS, there is an instability that leads to chaotic behavior and which is triggered by the amplification of the harmonics generated by the nonlinearities. We also show that for stochastic input signals, the MEMS array acts as a band-pass filter and after just a few elements the signal has a narrow power spectra.

Monte Carlo calculations of k{sub Q}, the beam quality conversion factor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muir, B. R.; Rogers, D. W. O.

2010-11-15

Purpose: To use EGSnrc Monte Carlo simulations to directly calculate beam quality conversion factors, k{sub Q}, for 32 cylindrical ionization chambers over a range of beam qualities and to quantify the effect of systematic uncertainties on Monte Carlo calculations of k{sub Q}. These factors are required to use the TG-51 or TRS-398 clinical dosimetry protocols for calibrating external radiotherapy beams. Methods: Ionization chambers are modeled either from blueprints or manufacturers' user's manuals. The dose-to-air in the chamber is calculated using the EGSnrc user-code egs{sub c}hamber using 11 different tabulated clinical photon spectra for the incident beams. The dose to amore » small volume of water is also calculated in the absence of the chamber at the midpoint of the chamber on its central axis. Using a simple equation, k{sub Q} is calculated from these quantities under the assumption that W/e is constant with energy and compared to TG-51 protocol and measured values. Results: Polynomial fits to the Monte Carlo calculated k{sub Q} factors as a function of beam quality expressed as %dd(10){sub x} and TPR{sub 10}{sup 20} are given for each ionization chamber. Differences are explained between Monte Carlo calculated values and values from the TG-51 protocol or calculated using the computer program used for TG-51 calculations. Systematic uncertainties in calculated k{sub Q} values are analyzed and amount to a maximum of one standard deviation uncertainty of 0.99% if one assumes that photon cross-section uncertainties are uncorrelated and 0.63% if they are assumed correlated. The largest components of the uncertainty are the constancy of W/e and the uncertainty in the cross-section for photons in water. Conclusions: It is now possible to calculate k{sub Q} directly using Monte Carlo simulations. Monte Carlo calculations for most ionization chambers give results which are comparable to TG-51 values. Discrepancies can be explained using individual Monte Carlo

A review: aluminum nitride MEMS contour-mode resonator

NASA Astrophysics Data System (ADS)

Yunhong, Hou; Meng, Zhang; Guowei, Han; Chaowei, Si; Yongmei, Zhao; Jin, Ning

2016-10-01

Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR. Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).

MEMS tunable grating micro-spectrometer

NASA Astrophysics Data System (ADS)

Tormen, Maurizio; Lockhart, R.; Niedermann, P.; Overstolz, T.; Hoogerwerf, A.; Mayor, J.-M.; Pierer, J.; Bosshard, C.; Ischer, R.; Voirin, G.; Stanley, R. P.

2017-11-01

The interest in MEMS based Micro-Spectrometers is increasing due to their potential in terms of flexibility as well as cost, low mass, small volume and power savings. This interest, especially in the Near-Infrared and Mid- Infrared, ranges from planetary exploration missions to astronomy, e.g. the search for extra solar planets, as well as to many other terrestrial fields of application such as, industrial quality and surface control, chemical analysis of soil and water, detection of chemical pollutants, exhausted gas analysis, food quality control, process control in pharmaceuticals, to name a few. A compact MEMS-based Spectrometer for Near- Infrared and Mid-InfraRed operation have been conceived, designed and demonstrated. The design based on tunable MEMS blazed grating, developed in the past at CSEM [1], achieves state of the art results in terms of spectral resolution, operational wavelength range, light throughput, overall dimensions, and power consumption.

A CMOS high speed imaging system design based on FPGA

NASA Astrophysics Data System (ADS)

Tang, Hong; Wang, Huawei; Cao, Jianzhong; Qiao, Mingrui

2015-10-01

CMOS sensors have more advantages than traditional CCD sensors. The imaging system based on CMOS has become a hot spot in research and development. In order to achieve the real-time data acquisition and high-speed transmission, we design a high-speed CMOS imaging system on account of FPGA. The core control chip of this system is XC6SL75T and we take advantages of CameraLink interface and AM41V4 CMOS image sensors to transmit and acquire image data. AM41V4 is a 4 Megapixel High speed 500 frames per second CMOS image sensor with global shutter and 4/3" optical format. The sensor uses column parallel A/D converters to digitize the images. The CameraLink interface adopts DS90CR287 and it can convert 28 bits of LVCMOS/LVTTL data into four LVDS data stream. The reflected light of objects is photographed by the CMOS detectors. CMOS sensors convert the light to electronic signals and then send them to FPGA. FPGA processes data it received and transmits them to upper computer which has acquisition cards through CameraLink interface configured as full models. Then PC will store, visualize and process images later. The structure and principle of the system are both explained in this paper and this paper introduces the hardware and software design of the system. FPGA introduces the driven clock of CMOS. The data in CMOS is converted to LVDS signals and then transmitted to the data acquisition cards. After simulation, the paper presents a row transfer timing sequence of CMOS. The system realized real-time image acquisition and external controls.

MEMS Louvers for Thermal Control

NASA Technical Reports Server (NTRS)

Champion, J. L.; Osiander, R.; Darrin, M. A. Garrison; Swanson, T. D.

1998-01-01

Mechanical louvers have frequently been used for spacecraft and instrument thermal control purposes. These devices typically consist of parallel or radial vanes, which can be opened or closed to vary the effective emissivity of the underlying surface. This project demonstrates the feasibility of using Micro-Electromechanical Systems (MEMS) technology to miniaturize louvers for such purposes. This concept offers the possibility of substituting the smaller, lighter weight, more rugged, and less costly MEMS devices for such mechanical louvers. In effect, a smart skin that self adjusts in response to environmental influences could be developed composed of arrays of thousands of miniaturized louvers. Several orders of magnitude size, weight, and volume decreases are potentially achieved using micro-electromechanical techniques. The use of this technology offers substantial benefits in spacecraft/instrument design, integration and testing, and flight operations. It will be particularly beneficial for the emerging smaller spacecraft and instruments of the future. In addition, this MEMS thermal louver technology can form the basis for related spacecraft instrument applications. The specific goal of this effort was to develop a preliminary MEMS device capable of modulating the effective emissivity of radiators on spacecraft. The concept pursued uses hinged panels, or louvers, in a manner such that heat emitted from the radiators is a function of louver angle. An electrostatic comb drive or other such actuator can control the louver position. The initial design calls for the louvers to be gold coated while the underlying surface is of high emissivity. Since, the base MEMS material, silicon, is transparent in the InfraRed (IR) spectrum, the device has a minimum emissivity when closed and a maximum emissivity when open. An initial set of polysilicon louver devices was designed at the Johns Hopkins Applied Physics Laboratory in conjunction with the Thermal Engineering Branch at

Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.

PubMed

Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S

2015-12-28

Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.

Carbon Nanotube Integration with a CMOS Process

PubMed Central

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

CMOS array design automation techniques

NASA Technical Reports Server (NTRS)

Lombardi, T.; Feller, A.

1976-01-01

The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits. The ROM was designed to be programmable either at the metal mask level or by a directed laser beam after processing. The development of a 4K CMOS SOS ROM fills a void left by available ROM chip types, and makes the design of a totally major high speed system more realizable.

Gamma-ray irradiation of ohmic MEMS switches

NASA Astrophysics Data System (ADS)

Maciel, John J.; Lampen, James L.; Taylor, Edward W.

2012-10-01

Radio Frequency (RF) Microelectromechanical System (MEMS) switches are becoming important building blocks for a variety of military and commercial applications including switch matrices, phase shifters, electronically scanned antennas, switched filters, Automatic Test Equipment, instrumentation, cell phones and smart antennas. Low power consumption, large ratio of off-impedance to on-impedance, extreme linearity, low mass, small volume and the ability to be integrated with other electronics makes MEMS switches an attractive alternative to other mechanical and solid-state switches for a variety of space applications. Radant MEMS, Inc. has developed an electrostatically actuated broadband ohmic microswitch that has applications from DC through the microwave region. Despite the extensive earth based testing, little is known about the performance and reliability of these devices in space environments. To help fill this void, we have irradiated our commercial-off-the-shelf SPST, DC to 40 GHz MEMS switches with gamma-rays as an initial step to assessing static impact on RF performance. Results of Co-60 gamma-ray irradiation of the MEMS switches at photon energies ≥ 1.0 MeV to a total dose of ~ 118 krad(Si) did not show a statistically significant post-irradiation change in measured broadband, RF insertion loss, insertion phase, return loss and isolation.

Printed Antennas Made Reconfigurable by Use of MEMS Switches

NASA Technical Reports Server (NTRS)

Simons, Rainee N.

2005-01-01

A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.

MEMS-Electronic-Photonic Heterogeneous Integrated FMCW Ladar Source

DTIC Science & Technology

2015-12-18

CMOS  ICs  in  a  seamless  manner,  and...the   heterogeneous   integration   is   to   leverage   on   the   available   foundry   capabilities   ( CMOS   and...dies”   or   “known  good  wafers”).  We  have  adopted  a  three-­‐dimensional  (3D)  integration  strategy:  The   CMOS

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Cell Sensors for Point-of-Care Diagnostics

PubMed Central

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

CMOS cell sensors for point-of-care diagnostics.

PubMed

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

1981-10-01

A triggered low-pressure switch was tested switching a charged capacitor across a damping resistor simulating a transformer. A series saturating inductor protected the switch from electron beam anode damage. The capacitor was 15 micro F and charge voltages up to 50 kV were used. The time to current maximum was 5 to 8 micro S. The current terminated at about 50 micro S and voltage could be reapplied at about 100 micro S.

Internal friction Q factor measurements in lunar rocks

NASA Technical Reports Server (NTRS)

Tittmann, B. R.

1978-01-01

In order to better interpret recently reported values for the variation of seismic Q as a function of depth below the lunar surface, we have developed apparatus and made laboratory measurements of Q as a function of hydrostatic pressure, temperature and frequency. Our measurements of the Q associated with shear deformations have demonstrated that the large difference in Q between well outgassed and volatile rich rocks persists to pressures corresponding to a depth of at least 50 km. Here we report new measurements of Q as a function of temperature, on the development of techniques to measure the Q associated with extensional deformations under hydrostatic pressure, on the derivation of theoretical relations between our laboratory Q values and the attenuation coefficient of seismic waves, and on the development of a model for mechanism of adsorption.

Survey of key technologies on millimeter-wave CMOS integrated circuits

NASA Astrophysics Data System (ADS)

Yu, Fei; Gao, Lei; Li, Lixiang; Cai, Shuo; Wang, Wei; Wang, Chunhua

2018-05-01

In order to provide guidance for the development of high performance millimeter-wave complementary metal oxide semiconductor (MMW-CMOS) integrated circuits (IC), this paper provides a survey of key technologies on MMW-CMOS IC. Technical background of MMW wireless communications is described. Then the recent development of the critical technologies of the MMW-CMOS IC are introduced in detail and compared. A summarization is given, and the development prospects on MMW-CMOS IC are also discussed.

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

PubMed Central

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

PubMed

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit

NASA Astrophysics Data System (ADS)

Jiang, Yuan; Zhang, Menglun; Duan, Xuexin; Zhang, Hao; Pang, Wei

2017-07-01

In this paper, a 2.6 GHz air-gap type thin film piezoelectric MEMS resonator was fabricated on a flexible polyethylene terephthalate film. A fabrication process combining transfer printing and hot-embossing was adopted to form a free-standing structure. The flexible radio frequency MEMS resonator possesses a quality factor of 946 and an effective coupling coefficient of 5.10%, and retains its high performance at a substrate bending radius of 1 cm. The achieved performance is comparable to that of conventional resonators on rigid silicon wafers. Our demonstration provides a viable approach to realizing universal MEMS devices on flexible polymer substrates, which is of great significance for building future fully integrated and multi-functional wireless flexible electronic systems.

Accurate Determination of the Q Quality Factor in Magnetoelastic Resonant Platforms for Advanced Biological Detection

PubMed Central

Lopes, Ana Catarina; Sagasti, Ariane; Lasheras, Andoni; Muto, Virginia; Gutiérrez, Jon; Kouzoudis, Dimitris; Barandiarán, José Manuel

2018-01-01

The main parameters of magnetoelastic resonators in the detection of chemical (i.e., salts, gases, etc.) or biological (i.e., bacteria, phages, etc.) agents are the sensitivity S (or external agent change magnitude per Hz change in the resonance frequency) and the quality factor Q of the resonance. We present an extensive study on the experimental determination of the Q factor in such magnetoelastic resonant platforms, using three different strategies: (a) analyzing the real and imaginary components of the susceptibility at resonance; (b) numerical fitting of the modulus of the susceptibility; (c) using an exact mathematical expression for the real part of the susceptibility. Q values obtained by the three methods are analyzed and discussed, aiming to establish the most adequate one to accurately determine the quality factor of the magnetoelastic resonance. PMID:29547578

Accurate Determination of the Q Quality Factor in Magnetoelastic Resonant Platforms for Advanced Biological Detection.

PubMed

Lopes, Ana Catarina; Sagasti, Ariane; Lasheras, Andoni; Muto, Virginia; Gutiérrez, Jon; Kouzoudis, Dimitris; Barandiarán, José Manuel

2018-03-16

The main parameters of magnetoelastic resonators in the detection of chemical (i.e., salts, gases, etc.) or biological (i.e., bacteria, phages, etc.) agents are the sensitivity S (or external agent change magnitude per Hz change in the resonance frequency) and the quality factor Q of the resonance. We present an extensive study on the experimental determination of the Q factor in such magnetoelastic resonant platforms, using three different strategies: (a) analyzing the real and imaginary components of the susceptibility at resonance; (b) numerical fitting of the modulus of the susceptibility; (c) using an exact mathematical expression for the real part of the susceptibility. Q values obtained by the three methods are analyzed and discussed, aiming to establish the most adequate one to accurately determine the quality factor of the magnetoelastic resonance.

Perspective: 2D for beyond CMOS

NASA Astrophysics Data System (ADS)

Robinson, Joshua A.

2018-05-01

Two-Dimensional (2D) materials have been a "beyond CMOS" focus for more than a decade now, and we are on the verge of a variety of breakthroughs in the science to enable their incorporation into next generation electronics. This perspective discusses some of the challenges that must be overcome, as well as various opportunities that await us in the world of 2D for beyond CMOS.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

NASA Astrophysics Data System (ADS)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

The MEMS process of a micro friction sensor

NASA Astrophysics Data System (ADS)

Yuan, Ming-Quan; Lei, Qiang; Wang, Xiong

2018-02-01

The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF6 flux 360 sccm; C4F8 flux 300 sccm; O2 flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

Recent Progress in Silicon Mems Oscillators

DTIC Science & Technology

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

Application of SPM interferometry in MEMS vibration measurement

NASA Astrophysics Data System (ADS)

Tang, Chaowei; He, Guotian; Xu, Changbiao; Zhao, Lijuan; Hu, Jun

2007-12-01

The resonant frequency measurement of cantilever has an important position in MEMS(Micro Electro Mechanical Systems) research. Meanwhile the SPM interferometry is a high-precision optical measurement technique, which can be used in physical quantity measurement of vibration, displacement, surface profile. Hence, in this paper we propose to apply SPM(SPM) interferometry in measuring the vibration of MEMS cantilever and in the experiment the vibration of MEMS cantilever was driven by light source. Then this kind of vibration was measured in nm precision. Finally the relational characteristics of MEMS cantilever vibration under optical excitation can be gotten and the measurement principle is analyzed. This method eliminates the influence on the measuring precision caused by external interference and light intensity change through feedback control loop. Experiment results prove that this measurement method has a good effect.

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

NASA Astrophysics Data System (ADS)

Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

2018-04-01

The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

New dynamic silicon photonic components enabled by MEMS technology

NASA Astrophysics Data System (ADS)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Self-calibrated humidity sensor in CMOS without post-processing.

PubMed

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

MEMS startups: disruptive technology and business do's and don'ts

NASA Astrophysics Data System (ADS)

Bryzek, Janusz

2005-02-01

This paper characterizes factors that affect the probability of success for new startups. These guidelines are derived primarily from Venture Capital industry experience in funding disruptive technology companies. It follows with an overview of Silicon Valley MEMS and MOEMS startups and provides with a summary of Do"s and Don"ts for entrepreneurs.

Development of a MEMS-Scale Turbomachinery Based Vacuum Pump

DTIC Science & Technology

2012-06-01

MEMS -SCALE TURBOMACHINERY BASED VACUUM PUMP by Michael J. Shea June 2012 Thesis Advisor: Anthony J. Gannon Second Reader...June 2012 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE Development of a MEMS -Scale Turbomachinery Based Vacuum Pump 5...to develop a MEMS scale turbomachinery based vacuum pump. This would allow very high vacuum to be drawn for handheld mass spectroscopy. This

RF-MEMS capacitive switches with high reliability

DOEpatents

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

Ultra low-power transceiver with novel FSK modulation technique and efficient FSK-to-ASK demodulation.

PubMed

Zgaren, Mohamed; Moradi, Arash; Sawan, Mohamad

2015-01-01

Energy-efficient and high-data rate are desired in biomedical devices transceivers. A high-performance transmitter (Tx) and an ultra-low-power receiver (Rx) dedicated to medical implants communications operating at Industrial, Scientific and Medical (ISM) frequency band are presented. Tx benefits from a new efficient Frequency-Shift Keying (FSK) modulation technique which provides up to 20 Mb/s of data-rate and consumes only 0.084 nJ/b validated through fabrication. The receiver consists of an FSK-to-ASK conversion based receiver with OOK fully passive wake-up device (WuRx). This WuRx is battery less with energy harvesting technique which plays an important role in making the RF transceiver energy-efficient. The Rx is achieved with a reduced hardware architecture which does not use an accurate local oscillator, high-Q external inductor and I/Q signal path. The Rx shows -78 dBm sensitivity for 8 Mbps data rate while consuming 639 μW. The proposed circuits are implemented in IBM 0.13 μm CMOS technology with 1.2 V supply voltage.

Integrated circuit for SAW and MEMS sensors

NASA Astrophysics Data System (ADS)

Fischer, Wolf-Joachim; Koenig, Peter; Ploetner, Matthias; Hermann, Rudiger; Stab, Helmut

2001-11-01

The sensor processor circuit has been developed for hand-held devices used in industrial and environmental applications, such as on-line process monitoring. Thereby devices with SAW sensors or MEMS resonators will benefit from this processor especially. Up to 8 sensors can be connected to the circuit as multisensors or sensor arrays. Two sensor processors SP1 and SP2 for different applications are presented in this paper. The SP-1 chip has a PCMCIA interface which can be used for the program and data transfer. SAW sensors which are working in the frequency range from 80 MHz to 160 MHz can be connected to the processor directly. It is possible to use the new SP-2 chip fabricated in a 0.5(mu) CMOS process for SAW devices with a maximum frequency of 600 MHz. An on-chip analog-digital-converter (ADC) and 6 PWM modules support the development of high-miniaturized intelligent sensor systems We have developed a multi-SAW sensor system with this ASIC that manages the requirements on control as well as signal generation and storage and provides an interface to the PC and electronic devices on the board. Its low power consumption and its PCMCIA plug fulfil the requirements of small size and mobility. For this application sensors have been developed to detect hazardous gases in ambient air. Sensors with differently modified copper-phthalocyanine films are capable of detecting NO2 and O3, whereas those with a hyperbranched polyester film respond to NH3.

MEMS: Enabled Drug Delivery Systems.

PubMed

Cobo, Angelica; Sheybani, Roya; Meng, Ellis

2015-05-01

Drug delivery systems play a crucial role in the treatment and management of medical conditions. Microelectromechanical systems (MEMS) technologies have allowed the development of advanced miniaturized devices for medical and biological applications. This Review presents the use of MEMS technologies to produce drug delivery devices detailing the delivery mechanisms, device formats employed, and various biomedical applications. The integration of dosing control systems, examples of commercially available microtechnology-enabled drug delivery devices, remaining challenges, and future outlook are also discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

NASA Astrophysics Data System (ADS)

Ammouri, Aymen; Ben Salah, Walid; Khachroumi, Sofiane; Ben Salah, Tarek; Kourda, Ferid; Morel, Hervé

2014-05-01

Design of integrated power converters needs prototype-less approaches. Specific simulations are required for investigation and validation process. Simulation relies on active and passive device models. Models of planar devices, for instance, are still not available in power simulator tools. There is, thus, a specific limitation during the simulation process of integrated power systems. The paper focuses on the development of a physically-based planar inductor model and its validation inside a power converter during transient switching. The planar inductor model remains a complex device to model, particularly when the skin, the proximity and the parasitic capacitances effects are taken into account. Heterogeneous simulation scheme, including circuit and device models, is successfully implemented in VHDL-AMS language and simulated in Simplorer platform. The mixed simulation results has been favorably tested and compared with practical measurements. It is found that the multi-domain simulation results and measurements data are in close agreement.

CMOS Ultralow Power Brain Signal Acquisition Front-Ends: Design and Human Testing.

PubMed

Karimi-Bidhendi, Alireza; Malekzadeh-Arasteh, Omid; Lee, Mao-Cheng; McCrimmon, Colin M; Wang, Po T; Mahajan, Akshay; Liu, Charles Yu; Nenadic, Zoran; Do, An H; Heydari, Payam

2017-08-01

Two brain signal acquisition (BSA) front-ends incorporating two CMOS ultralow power, low-noise amplifier arrays and serializers operating in mosfet weak inversion region are presented. To boost the amplifier's gain for a given current budget, cross-coupled-pair active load topology is used in the first stages of these two amplifiers. These two BSA front-ends are fabricated in 130 and 180 nm CMOS processes, occupying 5.45 mm 2 and 0.352 mm 2 of die areas, respectively (excluding pad rings). The CMOS 130-nm amplifier array is comprised of 64 elements, where each amplifier element consumes 0.216 μW from 0.4 V supply, has input-referred noise voltage (IRNoise) of 2.19 μV[Formula: see text] corresponding to a power efficiency factor (PEF) of 11.7, and occupies 0.044 mm 2 of die area. The CMOS 180 nm amplifier array employs 4 elements, where each element consumes 0.69 μW from 0.6 V supply with IRNoise of 2.3 μV[Formula: see text] (corresponding to a PEF of 31.3) and 0.051 mm 2 of die area. Noninvasive electroencephalographic and invasive electrocorticographic signals were recorded real time directly on able-bodied human subjects, showing feasibility of using these analog front-ends for future fully implantable BSA and brain- computer interface systems.

Toward CMOS image sensor based glucose monitoring.

PubMed

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

Microelectromechanical systems(MEMS): Launching Research Concepts into the Marketplace

NASA Astrophysics Data System (ADS)

Arney, Susanne

1999-04-01

More than a decade following the demonstration of the first spinning micromotors and microgears, the field of microelectromechanical systems (MEMS) has burgeoned on a worldwide basis. Integrated circuit design, fabrication, and packaging techniques have provided the foundation for the growth of an increasingly mature MEMS infrastructure which spans numerous topics of research as well as industrial application. The remarkable proliferation of MEMS concepts into such contrasting arenas of application as automotive sensors, biology, optical and wireless telecommunications, displays, printing, and physics experiments will be described. Challenges to commercialization of research prototypes will be discussed with emphasis on the development of design, fabrication, packaging, reliability and standards which fundamentally enable the application of MEMS to a highly diversified marketplace.

MEMS (Micro-Electro-Mechanical Systems) for Automotive and Consumer Electronics

NASA Astrophysics Data System (ADS)

Marek, Jiri; Gómez, Udo-Martin

MEMS sensors gained over the last two decades an impressive width of applications: (a) ESP: A car is skidding and stabilizes itself without driver intervention (b) Free-fall detection: A laptop falls to the floor and protects the hard drive by parking the read/write drive head automatically before impact. (c) Airbag: An airbag fires before the driver/occupant involved in an impending automotive crash impacts the steering wheel, thereby significantly reducing physical injury risk. MEMS sensors are sensing the environmental conditions and are giving input to electronic control systems. These crucial MEMS sensors are making system reactions to human needs more intelligent, precise, and at much faster reaction rates than humanly possible. Important prerequisites for the success of sensors are their size, functionality, power consumption, and costs. This technical progress in sensor development is realized by micro-machining. The development of these processes was the breakthrough to industrial mass-production for micro-electro-mechanical systems (MEMS). Besides leading-edge micromechanical processes, innovative and robust ASIC designs, thorough simulations of the electrical and mechanical behaviour, a deep understanding of the interactions (mainly over temperature and lifetime) of the package and the mechanical structures are needed. This was achieved over the last 20 years by intense and successful development activities combined with the experience of volume production of billions of sensors. This chapter gives an overview of current MEMS technology, its applications and the market share. The MEMS processes are described, and the challenges of MEMS, compared to standard IC fabrication, are discussed. The evolution of MEMS requirements is presented, and a short survey of MEMS applications is shown. Concepts of newest inertial sensors for ESP-systems are given with an emphasis on the design concepts of the sensing element and the evaluation circuit for achieving

The NASA GSFC MEMS Colloidal Thruster

NASA Technical Reports Server (NTRS)

Cardiff, Eric H.; Jamieson, Brian G.; Norgaard, Peter C.; Chepko, Ariane B.

2004-01-01

A number of upcoming missions require different thrust levels on the same spacecraft. A highly scaleable and efficient propulsion system would allow substantial mass savings. One type of thruster that can throttle from high to low thrust while maintaining a high specific impulse is a Micro-Electro-Mechanical System (MEMS) colloidal thruster. The NASA GSFC MEMS colloidal thruster has solved the problem of electrical breakdown to permit the integration of the electrode on top of the emitter by a novel MEMS fabrication technique. Devices have been successfully fabricated and the insulation properties have been tested to show they can support the required electric field. A computational finite element model was created and used to verify the voltage required to successfully operate the thruster. An experimental setup has been prepared to test the devices with both optical and Time-Of-Flight diagnostics.

MEMS-based tunable gratings and their applications

NASA Astrophysics Data System (ADS)

Yu, Yiting; Yuan, Weizheng; Qiao, Dayong

2015-03-01

The marriage of optics and MEMS has resulted in a new category of optical devices and systems that have unprecedented advantages compared with their traditional counterparts. As an important spatial light modulating technology, diffractive optical MEMS obtains a wide variety of successful commercial applications, e.g. projection displays, optical communication and spectral analysis, due to its features of highly compact, low-cost, IC-compatible, excellent performance, and providing possibilities for developing totally new, yet smart devices and systems. Three most successful MEMS diffraction gratings (GLVs, Polychromator and DMDs) are briefly introduced and their potential applications are analyzed. Then, three different MEMS tunable gratings developed by our group, named as micro programmable blazed gratings (μPBGs) and micro pitch-tunable gratings (μPTGs) working in either digital or analog mode, are demonstrated. The strategies to largely enhance the maximum blazed angle and grating period are described. Some preliminary application explorations based on the developed grating devices are also shown. For our ongoing research focus, we will further improve the device performance to meet the engineering application requirements.

BiCMOS circuit technology for a 704 MHz ATM switch LSI

NASA Astrophysics Data System (ADS)

Ohtomo, Yusuke; Yasuda, Sadayuki; Togashi, Minoru; Ino, Masayuki; Tanabe, Yasuyuki; Inoue, Jun-Ichi; Nogawa, Masafumi; Hino, Shigeki

1994-05-01

This paper describes BiCMOS level-converter circuits and clock circuits that increase VLSI interface speed to 1 GHz, and their application to a 704 MHz ATM switch LSI. An LSI with high speed interface requires a BiCMOS multiplexer/demultiplexer (MUX/DEMUX) on the chip to reduce internal operation speed. A MUX/DEMUX with minimum power dissipation and a minimum pattern area can be designed using the proposed converter circuits. The converter circuits, using weakly cross-coupled CMOS inverters and a voltage regulator circuit, can convert signal levels between LCML and positive CMOS at a speed of 500 MHz. Data synchronization in the high speed region is ensured by a new BiCMOS clock circuit consisting of a pure ECL path and retiming circuits. The clock circuit reduces the chip latency fluctuation of the clock signal and absorbs the delay difference between the ECL clock and data through the CMOS circuits. A rerouting-Banyan (RRB) ATM switch, employing both the proposed converter circuits and the clock circuits, has been fabricated with 0.5 micron BiCMOS technology. The LSI, composed of CMOS 15 K gate LOGIC, 8 Kb RAM, 1 Kb FIFO and ECL 1.6 K gate LOGIC, achieved an operation speed of 704-MHz with power dissipation of 7.2 W.

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review.

PubMed

Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J

2016-12-31

Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

Design of CMOS imaging system based on FPGA

NASA Astrophysics Data System (ADS)

Hu, Bo; Chen, Xiaolai

2017-10-01

In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

PubMed Central

Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J.

2016-01-01

Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design. PMID:28042860

Design and Analysis of a Micromachined LC Low Pass Filter For 2.4GHz Application

NASA Astrophysics Data System (ADS)

Saroj, Samruddhi R.; Rathee, Vishal R.; Pande, Rajesh S.

2018-02-01

This paper reports design and analysis of a passive low pass filter with cut-off frequency of 2.4 GHz using MEMS (Micro Electro-Mechanical Systems) technology. The passive components such as suspended spiral inductors and metal-insulator-metal (MIM) capacitor are arranged in T network form to implement LC low pass filter design. This design employs a simple approach of suspension thereby reducing parasitic losses to eliminate the performance degrading effects caused by integrating an off-chip inductor in the filter circuit proposed to be developed on a low cost silicon substrate using RF-MEMS components. The filter occupies only 2.1 mm x 0.66 mm die area and is designed using micro-strip transmission line placed on a silicon substrate. The design is implemented in High Frequency Structural Simulator (HFSS) software and fabrication flow is proposed for its implementation. The simulated results show that the design has an insertion loss of -4.98 dB and return loss of -2.60dB.

Power Mems Development

DTIC Science & Technology

2010-12-31

laboratories. Task 1.2 Contributors: Sunny Kedia, Shinzo Onishi , Scott Samson, Drew Hanser Task 1.2 Deliverable: Functional MEMS-based DC-DC...Shinzo Onishi , Drew Hanser, Weidong Wang, Sunny Kedia, John Bumgarner Deliverable: Prototype device fabricated on a thin-film diamond heat spreader

Fundamental performance differences between CMOS and CCD imagers: part III

NASA Astrophysics Data System (ADS)

Janesick, James; Pinter, Jeff; Potter, Robert; Elliott, Tom; Andrews, James; Tower, John; Cheng, John; Bishop, Jeanne

2009-08-01

This paper is a status report on recent scientific CMOS imager developments since when previous publications were written. Focus today is being given on CMOS design and process optimization because fundamental problems affecting performance are now reasonably well understood. Topics found in this paper include discussions on a low cost custom scientific CMOS fabrication approach, substrate bias for deep depletion imagers, near IR and x-ray point-spread performance, custom fabricated high resisitivity epitaxial and SOI silicon wafers for backside illuminated imagers, buried channel MOSFETs for ultra low noise performance, 1 e- charge transfer imagers, high speed transfer pixels, RTS/ flicker noise versus MOSFET geometry, pixel offset and gain non uniformity measurements, high S/N dCDS/aCDS signal processors, pixel thermal dark current sources, radiation damage topics, CCDs fabricated in CMOS and future large CMOS imagers planned at Sarnoff.

Through-wafer interrogation of microstructure motion for MEMS feedback control

NASA Astrophysics Data System (ADS)

Dawson, Jeremy M.; Chen, Jingdong; Brown, Kolin S.; Famouri, Parviz F.; Hornak, Lawrence A.

1999-09-01

Closed-loop MEMS control enables mechanical microsystems to adapt to the demands of the environment which they are actuating opening a new window of opportunity for future MEMS applications. Planar diffractive optical microsystems have the potential to enable the integrated optical interrogation of MEMS microstructure position fully decoupled from the means of mechanical actuation which is central to realization of feedback control. This paper presents the results of initial research evaluating through-wafer optical microsystems for MEMS integrated optical monitoring. Positional monitoring results obtained from a 1.3 micrometer wavelength through- wafer free-space optical probe of a lateral comb resonator fabricated using the Multi-User MEMS Process Service (MUMPS) are presented. Given the availability of positional information via probe signal feedback, a simulation of the application of nonlinear sliding control is presented illustrating position control of the lateral comb resonator structure.

MEMS for Tunable Photonic Metamaterial Applications

NASA Astrophysics Data System (ADS)

Stark, Thomas

Photonic metamaterials are materials whose optical properties are derived from artificially-structured sub-wavelength unit cells, rather than from the bulk properties of the constituent materials. Examples of metamaterials include plasmonic materials, negative index materials, and electromagnetic cloaks. While advances in simulation tools and nanofabrication methods have allowed this field to grow over the past several decades, many challenges still exist. This thesis addresses two of these challenges: fabrication of photonic metamaterials with tunable responses and high-throughput nanofabrication methods for these materials. The design, fabrication, and optical characterization of a microelectromechanical systems (MEMS) tunable plasmonic spectrometer are presented. An array of holes in a gold film, with plasmon resonance in the mid-infrared, is suspended above a gold reflector, forming a Fabry-Perot interferometer of tunable length. The spectra exhibit the convolution of extraordinary optical transmission through the holes and Fabry-Perot resonances. Using MEMS, the interferometer length is modulated from 1.7 mum to 21.67 mum , thereby tuning the free spectral range from about 2900 wavenumbers to 230.7 wavenumbers and shifting the reflection minima and maxima across the infrared. Due to its broad spectral tunability in the fingerprint region of the mid-infrared, this device shows promise as a tunable biological sensing device. To address the issue of high-throughput, high-resolution fabrication of optical metamaterials, atomic calligraphy, a MEMS-based dynamic stencil lithography technique for resist-free fabrication of photonic metamaterials on unconventional substrates, has been developed. The MEMS consists of a moveable stencil, which can be actuated with nanometer precision using electrostatic comb drive actuators. A fabrication method and flip chip method have been developed, enabling evaporation of metals through the device handle for fabrication on an

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

2008-01-01

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

CMOS-compatible spintronic devices: a review

NASA Astrophysics Data System (ADS)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

Uncertainty quantification in capacitive RF MEMS switches

NASA Astrophysics Data System (ADS)

Pax, Benjamin J.

Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

Optical MEMS for earth observation payloads

NASA Astrophysics Data System (ADS)

Rodrigues, B.; Lobb, D. R.; Freire, M.

2017-11-01

An ESA study has been taken by Lusospace Ltd and Surrey Satellite Techonoly Ltd (SSTL) into the use of optical Micro Eletro-Mechanical Systems (MEMS) for earth Observation. A review and analysis was undertaken of the Micro-Optical Electro-Mechanical Systems (MOEMS) available in the market with potential application in systems for Earth Observation. A summary of this review will be presented. Following the review two space-instrument design concepts were selected for more detailed analysis. The first was the use of a MEMS device to remove cloud from Earth images. The concept is potentially of interest for any mission using imaging spectrometers. A spectrometer concept was selected and detailed design aspects and benefits evaluated. The second concept developed uses MEMS devices to control the width of entrance slits of spectrometers, to provide variable spectral resolution. This paper will present a summary of the results of the study.

Small Pixel Hybrid CMOS X-ray Detectors

NASA Astrophysics Data System (ADS)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

MEMS applications in space exploration

NASA Astrophysics Data System (ADS)

Tang, William C.

1997-09-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. MEMS is one of the key enabling technology to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Enhanced inductance in laminated multilayer magnetic planar inductor for sensitive magnetic field detection

NASA Astrophysics Data System (ADS)

Wang, Yao; Wen, Yumei; Song, Fapeng; Li, Ping; Yu, Shumin

2018-04-01

The authors reported laminated multilayer magnetic planar inductors for sensitive magnetic field detection, which consist of two serially connected sandwich planar inductors (i.e., FeCuNbSiB/micro planar coil/FeCuNbSiB/micro planar coil/FeCuNbSiB). When ac current is applied to coils, the greatly increased inductance by the incorporated high permeability magnetic material and enlarged mutual-inductance among coils significantly improve the sensor sensitivity to the dc magnetic field. The demagnetizing field is also found to affect the performance severely when the shape and the number of magnetic layers vary. The investigation indicates that the proposed laminate can provide an inductance ratio of 665% at the frequency of 1 kHz. By connecting the sensor with a capacitor, the sensor output with varying dc magnetic fields is obtained by tuning the resonant frequency shift. The study indicates that the proposed sensor can provide a sensitivity of about 3.57 kHz/Oe with a resolution of 28 nT between 2 Oe and 60 Oe, which outperforms most of the magnetic sensors with frequency shifting output.

Human Pulse Wave Measurement by MEMS Electret Condenser Microphone

NASA Astrophysics Data System (ADS)

Nomura, Shusaku; Hanasaka, Yasushi; Ishiguro, Tadashi; Ogawa, Hiroshi

A micro Electret Condenser Microphone (ECM) fabricated by Micro Electro Mechanical System (MEMS) technology was employed as a novel apparatus for human pulse wave measurement. Since ECM frequency response characteristic, i.e. sensitivity, logically maintains a constant level at lower than the resonance frequency (stiffness control), the slightest pressure difference at around 1.0Hz generated by human pulse wave is expected to detect by MEMS-ECM. As a result of the verification of frequency response of MEMS-ECM, it was found that -20dB/dec of reduction in the sensitivity around 1.0Hz was engendered by a high input-impedance amplifier, i.e. the field effect transistor (FET), mounted near MEMS chip for amplifying tiny ECM signal. Therefore, MEMS-ECM is assumed to be equivalent with a differentiation circuit at around human pulse frequency. Introducing compensation circuit, human pulse wave was successfully obtained. In addition, the radial and ulnar artery tracing, and pulse wave velocity measurement at forearm were demonstrated; as illustrating a possible application of this micro device.

Low energy CMOS for space applications

NASA Technical Reports Server (NTRS)

Panwar, Ramesh; Alkalaj, Leon

1992-01-01

The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

Thermoacoustic inductor for heavy oil extraction

NASA Astrophysics Data System (ADS)

Tyncherov, K. T.; Mukhametshin, V. Sh; Paderin, M. G.; Selivanova, M. V.; Shokurov, I. V.; Almukhametova, E. M.

2018-03-01

The problem of enhancing heavy oil reservoir performance is a matter of relevance for many years. Among the technologies aimed at solving this problem, the technology of the bottom-hole and well casing heating is the most interesting. This is a real possibility to transform thickened hydrocarbon into a recoverable state, as well as to solve the tasks of cleaning the borehole from asphaltenes, resins, and paraffin sediments. In both cases, the borehole area is generally warmed up and the product is then pumped out by the known techniques. The type of the equipment, the way of the well operation, the stage of reservoir development, physical and chemical properties of paraffin sediments, etc. are taken into consideration. In the article, basing on the electromagnetic induction method and the Joule effect, the advantages of induction heating compared to the traditional resistive and steam methods are presented. It is shown that under the induction exposure, the heat is not focused on the apparatus, but on heating the oily product. Basing on the method, a thermoacoustic inductor with unique technical characteristics has been developed.

CMOS serial link for fully duplexed data communication

NASA Astrophysics Data System (ADS)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

PubMed

Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

2018-04-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ionizing doses and displacement damage testing of COTS CMOS imagers

NASA Astrophysics Data System (ADS)

Bernard, Frédéric; Petit, Sophie; Courtade, Sophie

2017-11-01

CMOS sensors begin to be a credible alternative to CCD sensors in some space missions. However, technology evolution of CMOS sensors is much faster than CCD one's. So a continuous technology evaluation is needed for CMOS imagers. Many of commercial COTS (Components Off The Shelf) CMOS sensors use organic filters, micro-lenses and non rad-hard technologies. An evaluation of the possibilities offered by such technologies is interesting before any custom development. This can be obtained by testing commercial COTS imagers. This article will present electro-optical performances evolution of off the shelves CMOS imagers after Ionizing Doses until 50kRad(Si) and Displacement Damage environment tests (until 1011 p/cm2 at 50 MeV). Dark current level and non uniformity evolutions are compared and discussed. Relative spectral response measurement and associated evolution with irradiation will also be presented and discussed. Tests have been performed on CNES detection benches.

RF MEMS devices for multifunctional integrated circuits and antennas

NASA Astrophysics Data System (ADS)

Peroulis, Dimitrios

Micromachining and RF Micro-Electro-Mechanical Systems (RF MEMS) have been identified as two of the most significant enabling technologies in developing miniaturized low-cost communications systems and sensor networks. The key components in these MEMS-based architectures are the RF MEMS switches and varactors. The first part of this thesis focuses on three novel RF MEMS components with state-of-the-art performance. In particular, a broadband 6 V capacitive MEMS switch is presented with insertion loss of only 0.04 and 0.17 dB at 10 and 40 GHz respectively. Special consideration is given to particularly challenging issues, such as residual stress, planarity, power handling capability and switching speed. The need for switches operating below 1 GHz is also identified and a spring-loaded metal-to-metal contact switch is developed. The measured on-state contact resistance and off-state series capacitance are 0.5 O and 10 fF respectively for this switch. An analog millimeter-wave variable capacitor is the third MEMS component presented in this thesis. This variable capacitor shows an ultra high measured tuning range of nearly 4:1, which is the highest reported value for the millimeter-wave region. The second part of this thesis primarily concentrates on MEMS-based reconfigurable systems and their potential to revolutionize the design of future RF/microwave multifunctional systems. High-isolation switches and switch packets with isolation of more than 60 dB are designed and implemented. Furthermore, lowpass and bandpass tunable filters with 3:1 and 2:1 tuning ratios respectively are demonstrated. Similar methods have been also applied to the field of slot antennas and a novel design technique for compact reconfigurable antennas has been developed. The main advantage of these antennas is that they essentially preserve their impedance, radiation pattern, polarization, gain and efficiency for all operating frequencies. The thesis concludes by discussing the future challenges

Experimental Investigation of DC-Bias Related Core Losses in a Boost Inductor (Postprint)

DTIC Science & Technology

2014-08-01

dc bias-flux conditions. These dc bias conditions result in distorted hysteresis loops , increased core losses, and have been shown to be independent...These dc bias conditions result in dis- torted hysteresis loops , increased core losses, and have been shown to be independent of core material. The...controllable converter load currents, this topology is ideal to study dc-related losses. Inductor core hysteresis loop characterization was accomplished

The challenge of sCMOS image sensor technology to EMCCD

NASA Astrophysics Data System (ADS)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

Amorphous selenium direct detection CMOS digital x-ray imager with 25 micron pixel pitch

NASA Astrophysics Data System (ADS)

Scott, Christopher C.; Abbaszadeh, Shiva; Ghanbarzadeh, Sina; Allan, Gary; Farrier, Michael; Cunningham, Ian A.; Karim, Karim S.

2014-03-01

We have developed a high resolution amorphous selenium (a-Se) direct detection imager using a large-area compatible back-end fabrication process on top of a CMOS active pixel sensor having 25 micron pixel pitch. Integration of a-Se with CMOS technology requires overcoming CMOS/a-Se interfacial strain, which initiates nucleation of crystalline selenium and results in high detector dark currents. A CMOS-compatible polyimide buffer layer was used to planarize the backplane and provide a low stress and thermally stable surface for a-Se. The buffer layer inhibits crystallization and provides detector stability that is not only a performance factor but also critical for favorable long term cost-benefit considerations in the application of CMOS digital x-ray imagers in medical practice. The detector structure is comprised of a polyimide (PI) buffer layer, the a-Se layer, and a gold (Au) top electrode. The PI layer is applied by spin-coating and is patterned using dry etching to open the backplane bond pads for wire bonding. Thermal evaporation is used to deposit the a-Se and Au layers, and the detector is operated in hole collection mode (i.e. a positive bias on the Au top electrode). High resolution a-Se diagnostic systems typically use 70 to 100 μm pixel pitch and have a pre-sampling modulation transfer function (MTF) that is significantly limited by the pixel aperture. Our results confirm that, for a densely integrated 25 μm pixel pitch CMOS array, the MTF approaches the fundamental material limit, i.e. where the MTF begins to be limited by the a-Se material properties and not the pixel aperture. Preliminary images demonstrating high spatial resolution have been obtained from a frst prototype imager.

Large CMOS imager using hadamard transform based multiplexing

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Wadsworth, Mark V.

2005-01-01

We have developed a concept design for a large (10k x 10k) CMOS imaging array whose elements are grouped in small subarrays with N pixels in each. The subarrays are code-division multiplexed using the Hadamard Transform (HT) based encoding. The Hadamard code improves the signal-to-noise (SNR) ratio to the reference of the read-out amplifier by a factor of N^1/2. This way of grouping pixels reduces the number of hybridization bumps by N. A single chip layout has been designed and the architecture of the imager has been developed to accommodate the HT base multiplexing into the existing CMOS technology. The imager architecture allows for a trade-off between the speed and the sensitivity. The envisioned imager would operate at a speed >100 fps with the pixel noise < 20 e-. The power dissipation would be 100 pW/pixe1. The combination of the large format, high speed, high sensitivity and low power dissipation can be very attractive for space reconnaissance applications.

Tests of commercial colour CMOS cameras for astronomical applications

NASA Astrophysics Data System (ADS)

Pokhvala, S. M.; Reshetnyk, V. M.; Zhilyaev, B. E.

2013-12-01

We present some results of testing commercial colour CMOS cameras for astronomical applications. Colour CMOS sensors allow to perform photometry in three filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system realized in colour CMOS sensors is close to the astronomical Johnson BVR system. The basic camera characteristics: read noise (e^{-}/pix), thermal noise (e^{-}/pix/sec) and electronic gain (e^{-}/ADU) for the commercial digital camera Canon 5D MarkIII are presented. We give the same characteristics for the scientific high performance cooled CCD camera system ALTA E47. Comparing results for tests of Canon 5D MarkIII and CCD ALTA E47 show that present-day commercial colour CMOS cameras can seriously compete with the scientific CCD cameras in deep astronomical imaging.

Monolithic integration of a plasmonic sensor with CMOS technology

NASA Astrophysics Data System (ADS)

Shakoor, Abdul; Cheah, Boon C.; Hao, Danni; Al-Rawhani, Mohammed; Nagy, Bence; Grant, James; Dale, Carl; Keegan, Neil; McNeil, Calum; Cumming, David R. S.

2017-02-01

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.

A Bio-Realistic Analog CMOS Cochlea Filter With High Tunability and Ultra-Steep Roll-Off.

PubMed

Wang, Shiwei; Koickal, Thomas Jacob; Hamilton, Alister; Cheung, Rebecca; Smith, Leslie S

2015-06-01

This paper presents the design and experimental results of a cochlea filter in analog very large scale integration (VLSI) which highly resembles physiologically measured response of the mammalian cochlea. The filter consists of three specialized sub-filter stages which respectively provide passive response in low frequencies, actively tunable response in mid-band frequencies and ultra-steep roll-off at transition frequencies from pass-band to stop-band. The sub-filters are implemented in balanced ladder topology using floating active inductors. Measured results from the fabricated chip show that wide range of mid-band tuning including gain tuning of over 20 dB, Q factor tuning from 2 to 19 as well as the bio-realistic center frequency shift are achieved by adjusting only one circuit parameter. Besides, the filter has an ultra-steep roll-off reaching over 300 dB/dec. By changing biasing currents, the filter can be configured to operate with center frequencies from 31 Hz to 8 kHz. The filter is 9th order, consumes 59.5 ∼ 90.0 μW power and occupies 0.9 mm2 chip area. A parallel bank of the proposed filter can be used as the front-end in hearing prosthesis devices, speech processors as well as other bio-inspired auditory systems owing to its bio-realistic behavior, low power consumption and small size.

GPS/MEMS IMU/Microprocessor Board for Navigation

NASA Technical Reports Server (NTRS)

Gender, Thomas K.; Chow, James; Ott, William E.

2009-01-01

A miniaturized instrumentation package comprising a (1) Global Positioning System (GPS) receiver, (2) an inertial measurement unit (IMU) consisting largely of surface-micromachined sensors of the microelectromechanical systems (MEMS) type, and (3) a microprocessor, all residing on a single circuit board, is part of the navigation system of a compact robotic spacecraft intended to be released from a larger spacecraft [e.g., the International Space Station (ISS)] for exterior visual inspection of the larger spacecraft. Variants of the package may also be useful in terrestrial collision-detection and -avoidance applications. The navigation solution obtained by integrating the IMU outputs is fed back to a correlator in the GPS receiver to aid in tracking GPS signals. The raw GPS and IMU data are blended in a Kalman filter to obtain an optimal navigation solution, which can be supplemented by range and velocity data obtained by use of (l) a stereoscopic pair of electronic cameras aboard the robotic spacecraft and/or (2) a laser dynamic range imager aboard the ISS. The novelty of the package lies mostly in those aspects of the design of the MEMS IMU that pertain to controlling mechanical resonances and stabilizing scale factors and biases.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Sensing magnetic flux density of artificial neurons with a MEMS device.

PubMed

Tapia, Jesus A; Herrera-May, Agustin L; García-Ramírez, Pedro J; Martinez-Castillo, Jaime; Figueras, Eduard; Flores, Amira; Manjarrez, Elías

2011-04-01

We describe a simple procedure to characterize a magnetic field sensor based on microelectromechanical systems (MEMS) technology, which exploits the Lorentz force principle. This sensor is designed to detect, in future applications, the spiking activity of neurons or muscle cells. This procedure is based on the well-known capability that a magnetic MEMS device can be used to sense a small magnetic flux density. In this work, an electronic neuron (FitzHugh-Nagumo) is used to generate controlled spike-like magnetic fields. We show that the magnetic flux density generated by the hardware of this neuron can be detected with a new MEMS magnetic field sensor. This microdevice has a compact resonant structure (700 × 600 × 5 μm) integrated by an array of silicon beams and p-type piezoresistive sensing elements, which need an easy fabrication process. The proposed microsensor has a resolution of 80 nT, a sensitivity of 1.2 V.T(-1), a resonant frequency of 13.87 kHz, low power consumption (2.05 mW), quality factor of 93 at atmospheric pressure, and requires a simple signal processing circuit. The importance of our study is twofold. First, because the artificial neuron can generate well-controlled magnetic flux density, we suggest it could be used to analyze the resolution and performance of different magnetic field sensors intended for neurobiological applications. Second, the introduced MEMS magnetic field sensor may be used as a prototype to develop new high-resolution biomedical microdevices to sense magnetic fields from cardiac tissue, nerves, spinal cord, or the brain.

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Efficient design of CMOS TSC checkers

NASA Technical Reports Server (NTRS)

Biddappa, Anita; Shamanna, Manjunath K.; Maki, Gary; Whitaker, Sterling

1990-01-01

This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

Power MEMS Development

DTIC Science & Technology

2010-08-31

circuit breakers for testing and analysis in ONR laboratories. Task 1.2 Contributors: Sunny Kedia, Shinzo Onishi , Scott Samson, Drew Hanser Task 1.2...HEAT SINK FOR HIGH-POWER MEMS SWITCH APPLICATIONS (TASK 1.3) Contributors: Priscila Spagnol, Shinzo Onishi , Drew Hanser, Weidong Wang, Sunny Kedia

Effective bichromatic potential for ultra-high Q-factor photonic crystal slab cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alpeggiani, Filippo, E-mail: filippo.alpeggiani01@ateneopv.it; Andreani, Lucio Claudio; Gerace, Dario

2015-12-28

We introduce a confinement mechanism in photonic crystal slab cavities, which relies on the superposition of two incommensurate one-dimensional lattices in a line-defect waveguide. It is shown that the resulting photonic profile realizes an effective quasi-periodic bichromatic potential for the electromagnetic field confinement yielding extremely high quality (Q) factor nanocavities, while simultaneously keeping the mode volume close to the diffraction limit. We apply these concepts to pillar- and hole-based photonic crystal slab cavities, respectively, and a Q-factor improvement by over an order of magnitude is shown over existing designs, especially in pillar-based structures. Thanks to the generality and easy adaptationmore » of such confinement mechanism to a broad class of cavity designs and photonic lattices, this work opens interesting routes for applications where enhanced light–matter interaction in photonic crystal structures is required.« less

Laser-assisted advanced assembly for MEMS fabrication

NASA Astrophysics Data System (ADS)

Atanasov, Yuriy Andreev

Micro Electro-Mechanical Systems (MEMS) are currently fabricated using methods originally designed for manufacturing semiconductor devices, using minimum if any assembly at all. The inherited limitations of this approach narrow the materials that can be employed and reduce the design complexity, imposing limitations on MEMS functionality. The proposed Laser-Assisted Advanced Assembly (LA3) method solves these problems by first fabricating components followed by assembly of a MEMS device. Components are micro-machined using a laser or by photolithography followed by wet/dry etching out of any material available in a thin sheet form. A wide range of materials can be utilized, including biocompatible metals, ceramics, polymers, composites, semiconductors, and materials with special properties such as memory shape alloys, thermoelectric, ferromagnetic, piezoelectric, and more. The approach proposed allows enhancing the structural and mechanical properties of the starting materials through heat treatment, tribological coatings, surface modifications, bio-functionalization, and more, a limited, even unavailable possibility with existing methods. Components are transferred to the substrate for assembly using the thermo-mechanical Selective Laser Assisted Die Transfer (tmSLADT) mechanism for microchips assembly, already demonstrated by our team. Therefore, the mechanical and electronic part of the MEMS can be fabricated using the same equipment/method. The viability of the Laser-Assisted Advanced Assembly technique for MEMS is demonstrated by fabricating magnetic switches for embedding in a conductive carbon-fiber metamaterial for use in an Electromagnetic-Responsive Mobile Cyber-Physical System (E-RMCPS), which is expected to improve the wireless communication system efficiency within a battery-powered device.

A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

NASA Astrophysics Data System (ADS)

Gray, Kory Forrest

The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS

Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

PubMed

Xia, Qiangfei; Robinett, Warren; Cumbie, Michael W; Banerjee, Neel; Cardinali, Thomas J; Yang, J Joshua; Wu, Wei; Li, Xuema; Tong, William M; Strukov, Dmitri B; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

2009-10-01

Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array. We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devices.

MEMS Micro-Valve for Space Applications

NASA Technical Reports Server (NTRS)

Chakraborty, I.; Tang, W. C.; Bame, D. P.; Tang, T. K.

1998-01-01

We report on the development of a Micro-ElectroMechanical Systems (MEMS) valve that is designed to meet the rigorous performance requirements for a variety of space applications, such as micropropulsion, in-situ chemical analysis of other planets, or micro-fluidics experiments in micro-gravity. These systems often require very small yet reliable silicon valves with extremely low leak rates and long shelf lives. Also, they must survive the perils of space travel, which include unstoppable radiation, monumental shock and vibration forces, as well as extreme variations in temperature. Currently, no commercial MEMS valve meets these requirements. We at JPL are developing a piezoelectric MEMS valve that attempts to address the unique problem of space. We begin with proven configurations that may seem familiar. However, we have implemented some major design innovations that should produce a superior valve. The JPL micro-valve is expected to have an extremely low leak rate, limited susceptibility to particulates, vibration or radiation, as well as a wide operational temperature range.

PolyMUMPs MEMS device to measure mechanical stiffness of single cells in aqueous media

NASA Astrophysics Data System (ADS)

Warnat, S.; King, H.; Forbrigger, C.; Hubbard, T.

2015-02-01

A method of experimentally determining the mechanical stiffness of single cells by using differential displacement measurements in a two stage spring system is presented. The spring system consists of a known MEMS reference spring and an unknown cellular stiffness: the ratio of displacements is related to the ratio of stiffness. A polyMUMPs implementation for aqueous media is presented and displacement measurements made from optical microphotographs using a FFT based displacement method with a repeatability of ~20 nm. The approach was first validated on a MEMS two stage spring system of known stiffness. The measured stiffness ratios of control structures (i) MEMS spring systems and (ii) polystyrene microspheres were found to agree with theoretical values. Mechanical tests were then performed on Saccharomyces cerevisiae (Baker’s yeast) in aqueous media. Cells were placed (using a micropipette) inside MEMS measuring structures and compressed between two jaws using an electrostatic actuator and displacements measured. Tested cells showed stiffness values between 5.4 and 8.4 N m-1 with an uncertainty of 11%. In addition, non-viable cells were tested by exposing viable cells to methanol. The resultant mean cell stiffness dropped by factor of 3 × and an explicit discrimination between viable and non-viable cells based on mechanical stiffness was seen.

Additive direct-write microfabrication for MEMS: A review

NASA Astrophysics Data System (ADS)

Teh, Kwok Siong

2017-12-01

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer- generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the maker movement. The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into threedimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

The low-power potential of oven-controlled MEMS oscillators.

PubMed

Vig, John; Kim, Yoonkee

2013-04-01

It is shown that oven-controlled micro electromechanical systems (MEMS) oscillators have the potential of attaining a higher frequency stability, with a lower power consumption, than temperature-compensated crystal oscillators (TCXOs) and the currently manufactured MEMS oscillators.

MEMS: A new approach to micro-optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlightsmore » polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.« less

Ball driven type MEMS SAD for artillery fuse

NASA Astrophysics Data System (ADS)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S.; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition.

Capacitance pressure sensor

DOEpatents

Eaton, William P.; Staple, Bevan D.; Smith, James H.

2000-01-01

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

Design and fabrication of reflective spatial light modulator for high-dynamic-range wavefront control

NASA Astrophysics Data System (ADS)

Zhu, Hao; Bierden, Paul; Cornelissen, Steven; Bifano, Thomas; Kim, Jin-Hong

2004-10-01

This paper describes design and fabrication of a microelectromechanical metal spatial light modulator (SLM) integrated with complementary metal-oxide semiconductor (CMOS) electronics, for high-dynamic-range wavefront control. The metal SLM consists of a large array of piston-motion MEMS mirror segments (pixels) which can deflect up to 0.78 µm each. Both 32x32 and 150x150 arrays of the actuators (1024 and 22500 elements respectively) were fabricated onto the CMOS driver electronics and individual pixels were addressed. A new process has been developed to reduce the topography during the metal MEMS processing to fabricate mirror pixels with improved optical quality.

Fabrication, characterization and comparison of composite magnetic materials for high efficiency integrated voltage regulators with embedded magnetic core micro-inductors

NASA Astrophysics Data System (ADS)

Bellaredj, Mohamed L. F.; Mueller, Sebastian; Davis, Anto K.; Mano, Yasuhiko; Kohl, Paul A.; Swaminathan, Madhavan

2017-11-01

High-efficiency integrated voltage regulators (IVRs) require the integration of power inductors, which have low loss and reduced size at very high frequency. The use of a magnetic material core can reduce significantly the inductor area and simultaneously increase the inductance. This paper focuses on the fabrication, characterization and modeling of nickel zinc (NiZn) ferrite and carbonyl iron powder (CIP)-epoxy magnetic composite materials, which are used as the magnetic core materials of embedded inductors in a printed wiring board (PWB) for a system in package (SIP) based buck type IVR. The fabricated composite materials and process are fully compatible with FR4 epoxy resin prepreg and laminate. For 85% weight loading of the magnetic powder (around 100 MHz at room temperature), the composite materials show a relative permeability of 7.5-8.1 for the NiZn ferrite composite and 5.2-5.6 for the CIP composite and a loss tangent value of 0.24-0.28 for the NiZn ferrite composite and 0.09-0.1 for the CIP-composite. The room temperature saturation flux density values are 0.1351 T and 0.5280 T for the NiZn ferrite and the CIP composites, respectively. The frequency dispersion parameters of the magnetic composites are modeled using a simplified Lorentz and Landau-Lifshitz-Gilbert equation for a Debye type relaxation. Embedded magnetic core solenoid inductors were designed based on the composite materials for the output filter of a high-efficiency SIP based buck type IVR. Evaluation of a SIP based buck type IVR with the designed inductors shows that it can reach peak efficiencies of 91.7% at 11 MHz for the NiZn ferrite-composite, 91.6% at 14 MHz for CIP-composite and 87.5% (NiZn ferrite-composite) and 87.3% (CIP-composite) efficiency at 100 MHz for a 1.7 V:1.05 V conversion. For a direct 5 V:1 V conversion using a stacked topology, a peak efficiency of 82% at 10 MHz and 72% efficiency at 100 MHz can be achieved for both materials.

BioMEMS for biosensors and closed-loop drug delivery.

PubMed

Coffel, Joel; Nuxoll, Eric

2018-06-15

The efficacy of pharmaceutical treatments can be greatly enhanced by physiological feedback from the patient using biosensors, though this is often invasive or infeasible. By adapting microelectromechanical systems (MEMS) technology to miniaturize such biosensors, previously inaccessible signals can be obtained, often from inside the patient. This is enabled by the device's extremely small footprint which minimizes both power consumption and implantation trauma, as well as the transport time for chemical analytes, in turn decreasing the sensor's response time. MEMS fabrication also allows mass production which can be easily scaled without sacrificing its high reproducibility and reliability, and allows seamless integration with control circuitry and telemetry which is already produced using the same materials and fabrication steps. By integrating these systems with drug delivery devices, many of which are also MEMS-based, closed loop drug delivery can be achieved. This paper surveys the types of signal transduction devices available for biosensing-primarily electrochemical, optical, and mechanical-looking at their implementation via MEMS technology. The impact of MEMS technology on the challenges of biosensor development, particularly safety, power consumption, degradation, fouling, and foreign body response, are also discussed. Copyright © 2018 Elsevier B.V. All rights reserved.

Development of a MEMS acoustic emission sensor system

NASA Astrophysics Data System (ADS)

Greve, David W.; Oppenheim, Irving J.; Wu, Wei; Wright, Amelia P.

2007-04-01

An improved multi-channel MEMS chip for acoustic emission sensing has been designed and fabricated in 2006 to create a device that is smaller in size, superior in sensitivity, and more practical to manufacture than earlier designs. The device, fabricated in the MUMPS process, contains four resonant-type capacitive transducers in the frequency range between 100 kHz and 500 kHz on a chip with an area smaller than 2.5 sq. mm. The completed device, with its circuit board, electronics, housing, and connectors, possesses a square footprint measuring 25 mm x 25 mm. The small footprint is an important attribute for an acoustic emission sensor, because multiple sensors must typically be arrayed around a crack location. Superior sensitivity was achieved by a combination of four factors: the reduction of squeeze film damping, a resonant frequency approximating a rigid body mode rather than a bending mode, a ceramic package providing direct acoustic coupling to the structural medium, and high-gain amplifiers implemented on a small circuit board. Manufacture of the system is more practical because of higher yield (lower unit costs) in the MUMPS fabrication task and because of a printed circuit board matching the pin array of the MEMS chip ceramic package for easy assembly and compactness. The transducers on the MEMS chip incorporate two major mechanical improvements, one involving squeeze film damping and one involving the separation of resonance modes. For equal proportions of hole area to plate area, a triangular layout of etch holes reduces squeeze film damping as compared to the conventional square layout. The effect is modeled analytically, and is verified experimentally by characterization experiments on the new transducers. Structurally, the transducers are plates with spring supports; a rigid plate would be the most sensitive transducer, and bending decreases the sensitivity. In this chip, the structure was designed for an order-of-magnitude separation between the first

Design and Fabrication of High Gain Multi-element Multi-segment Quarter-sector Cylindrical Dielectric Resonator Antenna

NASA Astrophysics Data System (ADS)

Ranjan, Pinku; Gangwar, Ravi Kumar

2017-12-01

A novel design and analysis of quarter cylindrical dielectric resonator antenna (q-CDRA) with multi-element and multi-segment (MEMS) approach has been presented. The MEMS q-CDRA has been designed by splitting four identical quarters from a solid cylinder and then multi-segmentation approach has been utilized to design q-CDRA. The proposed antenna has been designed for enhancement in bandwidth as well as for high gain. For bandwidth enhancement, multi-segmentation method has been explained for the selection of dielectric constant of materials. The performance of the proposed MEMS q-CDRA has been demonstrated with design guideline of MEMS approach. To validate the antenna performance, three segments q-CDRA has been fabricated and analyzed practically. The simulated results have been in good agreement with measured one. The MEMS q-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 133.8 % with monopole-like radiation pattern. The proposed MEMS q-CDRA has been operating at TM01δ mode with the measured gain of 6.65 dBi and minimum gain of 4.5 dBi in entire operating frequency band (5.1-13.7 GHz). The proposed MEMS q-CDRA may find appropriate applications in WiMAX and WLAN band.

Development of the micro pixel chamber based on MEMS technology

NASA Astrophysics Data System (ADS)

Takemura, T.; Takada, A.; Kishimoto, T.; Komura, S.; Kubo, H.; Matsuoka, Y.; Miuchi, K.; Miyamoto, S.; Mizumoto, T.; Mizumura, Y.; Motomura, T.; Nakamasu, Y.; Nakamura, K.; Oda, M.; Ohta, K.; Parker, J. D.; Sawano, T.; Sonoda, S.; Tanimori, T.; Tomono, D.; Yoshikawa, K.

2018-02-01

Micro pixel chambers (μ-PIC) are gaseous two-dimensional imaging detectors originally manufactured using printed circuit board (PCB) technology. They are used in MeV gamma-ray astronomy, medicalimaging, neutron imaging, the search for dark matter, and dose monitoring. The position resolution of the present μ-PIC is approximately 120 μm (RMS), however some applications require a fine position resolution of less than 100 μm. To this end, we have started to develop a μ-PIC based on micro electro mechanical system (MEMS) technology, which provides better manufacturing accuracy than PCB technology. Our simulation predicted the gains of MEMS μ-PICs to be twice those of PCB μ-PICs at the same anode voltage. We manufactured two MEMS μ-PICs and tested them to study their behavior. In these experiments, we successfully operated the fabricatedMEMS μ-PICs and we achieved a maximum gain of approximately 7×103 and collected their energy spectra under irradiation of X-rays from 55Fe. However, the measured gains of the MEMS μ-PICs were less than half of the values predicted in the simulations. We postulated that the gains of the MEMS μ-PICs are diminished by the effect of the silicon used as a semiconducting substrate.

MEMS closed-loop control incorporating a memristor as feedback sensing element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Ernest J.; Almeida, Sergio F.; Mireles, Jr., Jose

In this work the integration of a memristor with a MEMS parallel plate capacitor coupled by an amplification stage is simulated. It is shown that the MEMS upper plate position can be controlled up to 95% of the total gap. Due to its common operation principle, the change in the MEMS plate position can be interpreted by the change in the memristor resistance, or memristance. A memristance modulation of ~1 KΩ was observed. A polynomial expression representing the MEMS upper plate displacement as a function of the memristance is presented. Thereafter a simple design for a voltage closed-loop control ismore » presented showing that the MEMS upper plate can be stabilized up to 95% of the total gap using the memristor as a feedback sensing element. As a result, the memristor can play important dual roles in overcoming the limited operation range of MEMS parallel plate capacitors and in simplifying read-out circuits of those devices by representing the motion of the upper plate in the form of resistance change instead of capacitance change.« less

MEMS closed-loop control incorporating a memristor as feedback sensing element

DOE PAGES

Garcia, Ernest J.; Almeida, Sergio F.; Mireles, Jr., Jose; ...

2015-12-01

In this work the integration of a memristor with a MEMS parallel plate capacitor coupled by an amplification stage is simulated. It is shown that the MEMS upper plate position can be controlled up to 95% of the total gap. Due to its common operation principle, the change in the MEMS plate position can be interpreted by the change in the memristor resistance, or memristance. A memristance modulation of ~1 KΩ was observed. A polynomial expression representing the MEMS upper plate displacement as a function of the memristance is presented. Thereafter a simple design for a voltage closed-loop control ismore » presented showing that the MEMS upper plate can be stabilized up to 95% of the total gap using the memristor as a feedback sensing element. As a result, the memristor can play important dual roles in overcoming the limited operation range of MEMS parallel plate capacitors and in simplifying read-out circuits of those devices by representing the motion of the upper plate in the form of resistance change instead of capacitance change.« less

High responsivity CMOS imager pixel implemented in SOI technology

NASA Technical Reports Server (NTRS)

Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

2000-01-01

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

Comparison of the mean quality factors for astronauts calculated using the Q-functions proposed by ICRP, ICRU, and NASA

NASA Astrophysics Data System (ADS)

Sato, T.; Endo, A.; Niita, K.

2013-07-01

For the estimation of the radiation risk for astronauts, not only the organ absorbed doses but also their mean quality factors must be evaluated. Three functions have been proposed by different organizations for expressing the radiation quality, including the Q(L), Q(y), and QNASA(Z, E) relationships as defined in International Committee of Radiological Protection (ICRP) Publication 60, International Commission on Radiation Units and Measurements (ICRU) Report 40, and National Aeronautics and Space Administration (NASA) TP-2011-216155, respectively. The Q(L) relationship is the most simple and widely used for space dosimetry, but the use of the latter two functions enables consideration of the difference in the track structure of various charged particles during the risk estimation. Therefore, we calculated the mean quality factors in organs and tissues in ICRP/ICRU reference voxel phantoms for the isotropic exposure to various mono-energetic particles using the three Q-functions. The Particle and Heavy Ion Transport code System PHITS was employed to simulate the particle motions inside the phantoms. The effective dose equivalents and the phantom-averaged effective quality factors for the astronauts were then estimated from the calculated mean quality factors multiplied by the fluence-to-dose conversion coefficients and cosmic-ray fluxes inside a spacecraft. It was found from the calculations that QNASA generally gives the largest values for the phantom-averaged effective quality factors among the three Q-functions for neutron, proton, and lighter-ion irradiation, whereas Q(L) provides the largest values for heavier-ion irradiation. Overall, the introduction of QNASA instead of Q(L) or Q(y) in astronaut dosimetry results in the increase the effective dose equivalents because the majority of the doses are composed of the contributions from protons and neutrons, although this tendency may change by the calculation conditions.

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1979-01-01

Modifications and additions to the present process of making CMOS microcircuits which are designed to provide protective layers on the chip to guard against moisture and contaminants were investigated. High and low temperature Si3N4 protective layers were tested on the CMOS microcircuits and no conclusive improvements in device reliability characteristics were evidenced.

Apparatus for measuring internal friction Q factors in brittle materials. [applied to lunar samples

NASA Technical Reports Server (NTRS)

Tittmann, B. R.; Curnow, J. M.

1976-01-01

A flexural analog of the torsion pendulum for measuring the Young's modulus and the internal friction Q factor of brittle materials has been developed for Q greater than 10 to the 3rd measurements at a zero static stress and at 10 to the -7th strains of brittle materials in the Hz frequency range. The present design was motivated by the desire to measure Q in fragile lunar return samples at zero static stress to shed light on the anomalously low attenuation of seismic waves on the moon. The use of the apparatus is demonstrated with data on fused silica and on a terrestrial analog of lunar basalt.

Mechanically Flexible and High-Performance CMOS Logic Circuits.

PubMed

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-10-13

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

The Impact of Emerging MEMS-Based Microsystems on US Defense Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

STAPLE,BEVAN D.; JAKUBCZAK II,JEROME F.

2000-01-20

This paper examines the impact of inserting Micro-Electro-Mechanical Systems (MEMS) into US defense applications. As specific examples, the impacts of micro Inertial Measurement Units (IMUs), radio frequency MEMS (RF MEMS), and Micro-Opto-Electro-Mechanical Systems (MOEMS) to provide integrated intelligence, communication, and control to the defense infrastructure with increased affordability, functionality, and performance are highlighted.

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks.

PubMed

Hou, Bing; Chen, Hua; Wang, Zhiyu; Mo, Jiongjiong; Chen, Junli; Yu, Faxin; Wang, Wenbo

2017-01-24

In this paper, a low power transceiver for wireless sensor networks (WSN) is proposed. The system is designed with fully functional blocks including a receiver, a fractional-N frequency synthesizer, and a class-E transmitter, and it is optimized with a good balance among output power, sensitivity, power consumption, and silicon area. A transmitter and receiver (TX-RX) shared input-output matching network is used so that only one off-chip inductor is needed in the system. The power and area efficiency-oriented, fully-integrated frequency synthesizer is able to provide programmable output frequencies in the 2.4 GHz range while occupying a small silicon area. Implemented in a standard 0.18 μm RF Complementary Metal Oxide Semiconductor (CMOS) technology, the whole transceiver occupies a chip area of 0.5 mm² (1.2 mm² including bonding pads for a QFN package). Measurement results suggest that the design is able to work at amplitude shift keying (ASK)/on-off-keying (OOK) and FSK modes with up to 500 kbps data rate. With an input sensitivity of -60 dBm and an output power of 3 dBm, the receiver, transmitter and frequency synthesizer consumes 2.3 mW, 4.8 mW, and 3.9 mW from a 1.8 V supply voltage, respectively.

Application of MEMS-based x-ray optics as tuneable nanosecond choppers

NASA Astrophysics Data System (ADS)

Chen, Pice; Walko, Donald A.; Jung, Il Woong; Li, Zhilong; Gao, Ya; Shenoy, Gopal K.; Lopez, Daniel; Wang, Jin

2017-08-01

Time-resolved synchrotron x-ray measurements often rely on using a mechanical chopper to isolate a set of x-ray pulses. We have started the development of micro electromechanical systems (MEMS)-based x-ray optics, as an alternate method to manipulate x-ray beams. In the application of x-ray pulse isolation, we recently achieved a pulse-picking time window of half a nanosecond, which is more than 100 times faster than mechanical choppers can achieve. The MEMS device consists of a comb-drive silicon micromirror, designed for efficiently diffracting an x-ray beam during oscillation. The MEMS devices were operated in Bragg geometry and their oscillation was synchronized to x-ray pulses, with a frequency matching subharmonics of the cycling frequency of x-ray pulses. The microscale structure of the silicon mirror in terms of the curvature and the quality of crystallinity ensures a narrow angular spread of the Bragg reflection. With the discussion of factors determining the diffractive time window, this report showed our approaches to narrow down the time window to half a nanosecond. The short diffractive time window will allow us to select single x-ray pulse out of a train of pulses from synchrotron radiation facilities.

Aerospace applications of mass market MEMS products

NASA Astrophysics Data System (ADS)

Bauer, Karin; Kroetz, Gerhard; Schalk, Josef; Mueller, Gerhard

2002-07-01

Aerospace applications of MEMS products, originally developed for automotive mass markets, are discussed. Various sensor examples with a high dual use potential are presented: inertial sensing, flow and gas sensing, robust micro sensors including SiC- and GaN-based devices, as well as first approaches towards flexible and distributed microsystems. In Europe the automotive industry is one of the main MEMS market drivers, simply because of the sheer size of this market and Europe's strong position in this industrial field. Main MEMS activities are development and integration of vehicle dynamics sensing systems, passenger safety and navigation systems, air and fuel intake systems, as well as sensor systems for exhaust gas after treatment and climate control. Benefits on the customer side are increased safety, passenger comfort and reduced fuel consumption. Benefits on the manufacturer's side are increased sub-system integration, modularity and reduced production cost. In the future the aerospace industry is likely to benefit from the introduction of micro-systems for the same reasons as the automotive industry. Interests of the aerospace industry are increasing safety and reliability of airplane operation, health and state monitoring of fuselage and airplane subsystems as well as improving service and maintenance procedures. In comparison to automotive applications, the numbers of devices needed is likely to be much smaller, however, new challenges arise in so far as distributed sensing and actuating microsystems will be needed. The idea is to identify and to exploit synergies between automotive mass market MEMS applications and lower-volume aerospace ones. The effort necessary to meet aerospace requirements and the extent of necessary trade-offs in customizing automotive MEMS is addressed considering the above-mentioned examples.

Q and you: The application of Q methodology in recreation research

Treesearch

Whitney Ward

2010-01-01

Researchers have used various qualitative and quantitative methods to deal with subjectivity in studying people's recreation experiences. Q methodology has been the most effective approach for analyzing both qualitative and quantitative aspects of experience, including attitudes or perceptions. The method is composed of two main components--Q sorting and Q factor...

Sputtered highly oriented PZT thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

Cargo Movement Operations System (CMOS). Software Requirements Specification

DTIC Science & Technology

1990-03-12

was erroneously deleted. CMOS PMO ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO [ ] COMMENT DISPOSITION: COMMENT STATUS: OPEN...previous SRS. CMOS PMO ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO [ ] COMMENT DISPOSITION: COMMENT STATUS: OPEN [ ] CLOSED...ACCEPTS COMMENT: YES [ ] NO [ ] ERCI ACCEPTS COMMENT: YES [ ] NO [ ] COMMENT DISPOSITION: COMMENT STATUS: OPEN [ ] CLOSED [ ] 0 ORIGINATOR CONTROL NUMBER

Reliability modelling and analysis of thermal MEMS

NASA Astrophysics Data System (ADS)

Muratet, Sylvaine; Lavu, Srikanth; Fourniols, Jean-Yves; Bell, George; Desmulliez, Marc P. Y.

2006-04-01

This paper presents a MEMS reliability study methodology based on the novel concept of 'virtual prototyping'. This methodology can be used for the development of reliable sensors or actuators and also to characterize their behaviour in specific use conditions and applications. The methodology is demonstrated on the U-shaped micro electro thermal actuator used as test vehicle. To demonstrate this approach, a 'virtual prototype' has been developed with the modeling tools MatLab and VHDL-AMS. A best practice FMEA (Failure Mode and Effect Analysis) is applied on the thermal MEMS to investigate and assess the failure mechanisms. Reliability study is performed by injecting the identified defaults into the 'virtual prototype'. The reliability characterization methodology predicts the evolution of the behavior of these MEMS as a function of the number of cycles of operation and specific operational conditions.

Fabrication of an integrated high-quality-factor (high-Q) optofluidic sensor by femtosecond laser micromachining.

PubMed

Song, Jiangxin; Lin, Jintian; Tang, Jialei; Liao, Yang; He, Fei; Wang, Zhaohui; Qiao, Lingling; Sugioka, Koji; Cheng, Ya

2014-06-16

We report on fabrication of a microtoroid resonator of a high-quality factor (i.e., Q-factor of ~3.24 × 10(6) measured under the critical coupling condition) integrated in a microfluidic channel using femtosecond laser three-dimensional (3D) micromachining. Coupling of light into and out of the microresonator has been realized with a fiber taper that is reliably assembled with the microtoroid. The assembly of the fiber to the microtoroid is achieved by welding the fiber taper onto the sidewall of the microtoroid using CO2 laser irradiation. The integrated microresonator maintains a high Q-factor of 3.21 × 10(5) as measured in air, which should still be sufficient for many sensing applications. We test the functionality of the integrated optofluidic sensor by performing bulk refractive index sensing of purified water doped with tiny amount of salt. It is shown that a detection limit of ~1.2 × 10(-4) refractive index unit can be achieved. Our result showcases the capability of integration of high-Q microresonators with complex microfluidic systems using femtosecond laser 3D micromachining.

Method of controlling switching of a multiphase inductor-converter bridge

DOEpatents

Kustom, Robert L.; Fuja, Raymond E.

1981-01-01

In an inductor-convertor circuit for transferring electrical energy between a storage coil and a load coil using a storage thyristor bridge, a load thyristor bridge, and a set of commutating capacitors, operation is improved by a method of changing the rate of delivery of energy in a given direction. The change in rate corresponds to a predetermined change in phase angle between the load bridge and the storage bridge and comprises changing the phase of the bridge by two steps, each equal to half the predetermined change and occurring 180.degree. apart. The method assures commutation and minimizes imbalances that lead otherwise to overvoltages.

A safety monitoring system for taxi based on CMOS imager

NASA Astrophysics Data System (ADS)

Liu, Zhi

2005-01-01

CMOS image sensors now become increasingly competitive with respect to their CCD counterparts, while adding advantages such as no blooming, simpler driving requirements and the potential of on-chip integration of sensor, analogue circuitry, and digital processing functions. A safety monitoring system for taxi based on cmos imager that can record field situation when unusual circumstance happened is described in this paper. The monitoring system is based on a CMOS imager (OV7120), which can output digital image data through parallel pixel data port. The system consists of a CMOS image sensor, a large capacity NAND FLASH ROM, a USB interface chip and a micro controller (AT90S8515). The structure of whole system and the test data is discussed and analyzed in detail.