Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films.

PubMed

Rath, Patrik; Khasminskaya, Svetlana; Nebel, Christoph; Wild, Christoph; Pernice, Wolfram Hp

2013-01-01

Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD) on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

Microstructural studies by TEM of diamond films grown by combustion flame

NASA Astrophysics Data System (ADS)

Ma, G.-H. M.; Hirose, Y.; Amanuma, S.; McClure, M.; Prater, J. T.; Glass, J. T.

Microstructures of diamond films grown in an oxygen-acetylene combustion flame were studied by TEM. The O2/C2H2 gas ratio was fixed and the substrate materials and temperature were varied. High quality diamond films were grown by this method at high growth rates of about 30 micron/hr. A rough surface and high density of secondary nucleation sites and microtwins were observed in the diamond grains grown on molybdenum (Mo) at a substrate temperature of 500 C. When the substrate temperature wass raised to between 500 and 870 C, the defect density was greatly reduced, revealing a low density of stacking faults and dislocations. Diamond films grown on Si substrates did not show the same substrate temperature dependence on defect density, at least not over the same temperature range. However, the same correlation between defect density, secondary nucleation, and surface morphology was observed.

Metal films on the surfaces and within diamond crystals from Arkhangelskaya and Yakutian diamond provinces

NASA Astrophysics Data System (ADS)

Makeev, A. B.; Kriulina, G. Yu.

2012-12-01

Representative samples of diamonds from five kimberlite pipes (Lomonosovskaya, Archangel'sk, Snegurochka, XXIII Congress of the Communist Party of the Soviet Union (CPSU), and Internationalnaya) of the Arkhangelskaya and Yakutian diamond provinces in Russia have been studied. Thirty-three varieties of metal films have been identified as syngenetic associated minerals. The films consist of 15 chemical elements that occur in the form of native metals and their natural alloys. Remnants of metal films were detected within diamond crystals. The metal films coating diamonds are a worldwide phenomenon. To date, these films have been described from Europe, Asia, South America, and Africa. Native metals, their alloys, and intermetallides are actual companion minerals of diamond.

Ion-Implanted Diamond Films and Their Tribological Properties

NASA Technical Reports Server (NTRS)

Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

1993-01-01

This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

Method of improving field emission characteristics of diamond thin films

DOEpatents

Krauss, A.R.; Gruen, D.M.

1999-05-11

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Method of improving field emission characteristics of diamond thin films

DOEpatents

Krauss, Alan R.; Gruen, Dieter M.

1999-01-01

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Amorphous diamond films

DOEpatents

Falabella, S.

1998-06-09

Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

Freestanding diamond films: plates, tubes, and curved diaphragms

NASA Astrophysics Data System (ADS)

Obata, Tatsuo; Morimoto, Shingo

1990-01-01

Free-standing diamond films are prepared by CVD technique to examine their properties directly. The products have a variety of shapes such as plates, tubes and curved diaphragms. Coefficients of thermal expansion (GTE) of the tube are similar to the values of a bulk diamond in the range from 40°C to 500°C. It is found that polished diamond film has uniform infrared transmission ranging from 500cm-1 to 4000cm-1. A speaker diaphragm will be a good application for free-standing diamond film.

Electron emission from diamond films seeded using kitchen-wrap polyethylene

NASA Astrophysics Data System (ADS)

Varshney, D.; Makarov, V. I.; Saxena, P.; Guinel, M. J. F.; Kumar, A.; Scott, J. F.; Weiner, B. R.; Morell, G.

2011-03-01

Diamond has many potential electronic applications, but the diamond seeding methods are generally harsh on the substrates rendering them unsuitable for integration in electronics. We report a non-abrasive, scalable and economic process of diamond film seeding using kitchen-wrap polyethylene employing hot filament chemical vapour reaction of H2S/CH4/H2 gas mixtures on Cu substrates. The fabricated diamond films were characterized with scanning electron microscopy, transmission electron microscopy and Raman spectroscopy, which confirm that the deposited film consists of a microcrystalline diamond of size in the range 0.5-1.0 µm. The synthesized diamond films exhibit a turn-on field of about 8.5 V µm-1 and long-term stability. Diamond film synthesis using polyethylene will enable the integration of diamond heat sinks into high-power and high-temperature electronic devices.

UV-photodetector based on NiO/diamond film

NASA Astrophysics Data System (ADS)

Chang, Xiaohui; Wang, Yan-Feng; Zhang, Xiaofan; Liu, Zhangcheng; Fu, Jiao; Fan, Shuwei; Bu, Renan; Zhang, Jingwen; Wang, Wei; Wang, Hong-Xing; Wang, Jingjing

2018-01-01

In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.

Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process

NASA Astrophysics Data System (ADS)

Zhao, Qingxun; Shang, Yong; Dong, Lifang; Fu, Guangsheng; Yan, Zheng; Yang, Jingfa

2002-09-01

In this paper, the experimental synthesis of diamond films and optical emission spectroscopy (OES) of the gaseous phase species are studied in the range of substrate temperature from Ts = 300°C to 850°C. The high quality sub-microcrystalline diamond films are successfully deposited at substrate temperature (330 ≍ 340)°C by adopting glow plasma assisted hot filament chemical vapor deposition (GPCVD). For the first time, in situ OES is applied to diagnose weak signal of GPCVD system when CH4 and H2 are used as the input gas, and the reactive species are identified in diamond growth processes. A primary model of diamond films growing at low temperature is presented by studying dynamic behavior for nonequilibrium plasma reactions.

Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

NASA Astrophysics Data System (ADS)

Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

2016-01-01

It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

Diamond film growth from fullerene precursors

DOEpatents

Gruen, Dieter M.; Liu, Shengzhong; Krauss, Alan R.; Pan, Xianzheng

1997-01-01

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, F. B.; Jing, B.; Cui, Y.

2015-04-15

The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond filmmore » are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed.« less

Diamond film growth argon-carbon plasmas

DOEpatents

Gruen, Dieter M.; Krauss, Alan R.; Liu, Shengzhong; Pan, Xianzheng; Zuiker, Christopher D.

1998-01-01

A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

Diamond film growth from fullerene precursors

DOEpatents

Gruen, D.M.; Liu, S.; Krauss, A.R.; Pan, X.

1997-04-15

A method and system are disclosed for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate. 10 figs.

Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

NASA Astrophysics Data System (ADS)

Lin, Zichao; Sun, Fanghong; Shen, Bin

2016-11-01

Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

Diamond film growth argon-carbon plasmas

DOEpatents

Gruen, D.M.; Krauss, A.R.; Liu, S.Z.; Pan, X.Z.; Zuiker, C.D.

1998-12-15

A method and system are disclosed for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate. 29 figs.

Scanning tunneling microscopy studies of diamond films and optoelectronic materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1993-01-01

In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

Diamond thin films: giving biomedical applications a new shine

PubMed Central

Nistor, P. A.

2017-01-01

Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo, diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required. PMID:28931637

Grain-size-dependent diamond-nondiamond composite films: characterization and field-emission properties.

PubMed

Pradhan, Debabrata; Lin, I Nan

2009-07-01

Diamond films with grain sizes in the range of 5-1000 nm and grain boundaries containing nondiamond carbon are deposited on a silicon substrate by varying the deposition parameters. The overall morphologies of the as-deposited diamond-nondiamond composite films are examined by scanning electron microscopy and atomic force microscopy, which show a decrease in the surface roughness with a decrease in the diamond grain size. Although the Raman spectra show predominately nondiamond carbon features in the diamond films with smaller grain sizes, glancing-angle X-ray diffraction spectra show the absence of graphitic carbon features and the presence of very small amorphous carbon diffraction features. The CH4 percentage (%) in Ar and H2 plasma during deposition plays a crucial role in the formation of diamond films with different grain sizes and nondiamond carbon contents, which, in turn, determines the field-emission behavior of the corresponding diamond films. The smaller the grain size of the diamond, the lower is the turn-on field for electron emission. A lower turn-on field is obtained from the diamond films deposited with 2-5% CH4 than from the films deposited with either 1% or 7.5% CH4 in the Ar medium. A current density greater than 1 mA/cm2 (at 50 V/microm) is obtained from diamond films deposited with a higher percentage of CH4. A model is suggested for the field-emission mechanism from the diamond-nondiamond composite films with different diamond grain sizes and nondiamond contents.

Diamond thin film temperature and heat-flux sensors

NASA Technical Reports Server (NTRS)

Aslam, M.; Yang, G. S.; Masood, A.; Fredricks, R.

1995-01-01

Diamond film temperature and heat-flux sensors are developed using a technology compatible with silicon integrated circuit processing. The technology involves diamond nucleation, patterning, doping, and metallization. Multi-sensor test chips were designed and fabricated to study the thermistor behavior. The minimum feature size (device width) for 1st and 2nd generation chips are 160 and 5 micron, respectively. The p-type diamond thermistors on the 1st generation test chip show temperature and response time ranges of 80-1270 K and 0.29-25 microseconds, respectively. An array of diamond thermistors, acting as heat flux sensors, was successfully fabricated on an oxidized Si rod with a diameter of 1 cm. Some problems were encountered in the patterning of the Pt/Ti ohmic contacts on the rod, due mainly to the surface roughness of the diamond film. The use of thermistors with a minimum width of 5 micron (to improve the spatial resolution of measurement) resulted in lithographic problems related to surface roughness of diamond films. We improved the mean surface roughness from 124 nm to 30 nm by using an ultra high nucleation density of 10(exp 11)/sq cm. To deposit thermistors with such small dimensions on a curved surface, a new 3-D diamond patterning technique is currently under development. This involves writing a diamond seed pattern directly on the curved surface by a computer-controlled nozzle.

Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

2000-01-01

The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

NASA Technical Reports Server (NTRS)

George, M. A.; Burger, A.; Collins, W. E.; Davidson, J. L.; Barnes, A. V.; Tolk, N. H.

1994-01-01

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

Morphology modulating the wettability of a diamond film.

PubMed

Tian, Shibing; Sun, Weijie; Hu, Zhaosheng; Quan, Baogang; Xia, Xiaoxiang; Li, Yunlong; Han, Dong; Li, Junjie; Gu, Changzhi

2014-10-28

Control of the wetting property of diamond surface has been a challenge because of its maximal hardness and good chemical inertness. In this work, the micro/nanoarray structures etched into diamond film surfaces by a maskless plasma method are shown to fix a surface's wettability characteristics, and this means that the change in morphology is able to modulate the wettability of a diamond film from weakly hydrophilic to either superhydrophilic or superhydrophobic. It can be seen that the etched diamond surface with a mushroom-shaped array is superhydrophobic following the Cassie mode, whereas the etched surface with nanocone arrays is superhydrophilic in accordance with the hemiwicking mechnism. In addition, the difference in cone densities of superhydrophilic nanocone surfaces has a significant effect on water spreading, which is mainly derived from different driving forces. This low-cost and convenient means of altering the wetting properties of diamond surfaces can be further applied to underlying wetting phenomena and expand the applications of diamond in various fields.

Fabrication of amorphous diamond films

DOEpatents

Falabella, S.

1995-12-12

Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

NASA Astrophysics Data System (ADS)

Saito, Daisuke; Yang, Chen; Heidari, Amir; Najar, Hadi; Lin, Liwei; Horsley, David A.

2016-02-01

We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O2 in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000) was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Correlation of CVD Diamond Electron Emission with Film Properties

NASA Astrophysics Data System (ADS)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, D.F.; Kwan, S.W.

1999-03-30

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, David F.; Kwan, Simon W.

1999-01-01

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1996-01-01

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6

Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1994-01-01

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine

Investigation of laser ablation of CVD diamond film

NASA Astrophysics Data System (ADS)

Chao, Choung-Lii; Chou, W. C.; Ma, Kung-Jen; Chen, Ta-Tung; Liu, Y. M.; Kuo, Y. S.; Chen, Ying-Tung

2005-04-01

Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, high hardness value and extreme brittleness have made diamond extremely difficult to be machined by conventional mechanical grinding and polishing. In the present study, the microwave CVD method was employed to produce epitaxial diamond films on silicon single crystal. Laser ablation experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. It was found that during the laser ablation, peaks of the diamond grains were removed mainly by the photo-thermal effects introduced by excimer laser. The diamond structures of the protruded diamond grains were transformed by the laser photonic energy into graphite, amorphous diamond and amorphous carbon which were removed by the subsequent laser shots. As the protruding peaks gradually removed from the surface the removal rate decreased. Surface roughness (Ra) was improved from above 1μm to around 0.1μm in few minutes time in this study. However, a scanning technique would be required if a large area was to be polished by laser and, as a consequence, it could be very time consuming.

Characterization of diamond thin films and related materials

NASA Astrophysics Data System (ADS)

McKindra, Travis Kyle

Thin carbon films including sputtered deposited graphite and CO 2 laser-assisted combustion-flame deposited graphite and diamond thin films were characterized using optical and electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Amorphous carbon thin films were deposited by DC magnetron sputtering using Ar/O2 gases. The film morphology changed with the oxygen content. The deposition rate decreased as the amount of oxygen increased due to oxygen reacting with the growing film. The use of oxygen in the working gas enhanced the crystalline nature of the films. Graphite was deposited on WC substrates by a CO2 laser-assisted O2/C2H2 combustion-flame method. Two distinct microstructural areas were observed; an inner core of dense material surrounded by an outer shell of lamellar-like material. The deposits were crystalline regardless of the laser power and deposition times of a few minutes. Diamond films were deposited by a CO2 laser-assisted O 2/C2H2/C2H4 combustion-flame method with the laser focused parallel to the substrate surface. The laser enhanced diamond growth was most pronounced when deposited with a 10.532 microm CO2 laser wavelength tuned to the CH2-wagging vibrational mode of the C2H4 molecule. Nucleation of diamond thin films deposited with and without using a CO 2 laser-assisted combustion-flame process was investigated. With no laser there was nucleation of a sub-layer of grains followed by irregular grain growth. An untuned laser wavelength yielded nucleation of a sub-layer then columnar grain growth. The 10.532 microm tuned laser wavelength caused growth of columnar grains.

Effects of Surface Treatments on Secondary Electron Emission from CVD Diamond Films

NASA Technical Reports Server (NTRS)

Mearini, G. T.; Krainsky, I. L.; Dayton, J. A., Jr.; Zorman, Christian; Wang, Yaxin; Lamouri, A.

1995-01-01

Secondary electron emission (SEE) properties of polycrystalline diamond films grown by chemical vapor deposition (CVD) were measured. The total secondary yield (sigma) from as-grown samples was observed to be as high as 20 at room temperature and 48 while heating at 700 K in vacuum. Electron-beam-activated, alkali-terminated diamond films have shown stable values of sigma as high as 60 when coated with CsI and similarly high values when coated with other alkali halides. Diamond coated with BaF2 had a stable sigma of 6, but no enhancement of the SEE properties was observed with coatings of Ti or Au. Hydrogen was identified to give rise to this effect in as-grown films. However, electron beam exposure led to a reduction in sigma values as low as 2. Exposure to a molecular hydrogen environment restored sigma to its original value after degradation, and enabled stable secondary emission during electron beam exposure. Atomic hydrogen and hydrogen plasma treatments were performed on diamond/Mo samples in an attempt to increase the near-surface hydrogen concentration which might lead to increased stability in the secondary emission. Raman scattering analysis, scanning electron microscopy, and Auger electron spectroscopy (AES) confirmed that hydrogen plasma and atomic hydrogen treatments improved the quality of the CVD diamond significantly. Elastic recoil detection (ERD) showed that heating as-grown diamond targets to 7OO K, which was correlated with an increase in sigma, removed contaminants from the surface but did not drive hydrogen from the diamond bulk. ERD showed that the hydrogen plasma treatment produced an increase in the hydrogen concentration in the near-surface region which did not decrease while heating in vacuum at 700 K, but no improvement in the SEE properties was observed.

Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

NASA Astrophysics Data System (ADS)

Catledge, Shane Aaron

The primary focus of this dissertation is the investigation of the processing-structure-property relationships of diamond films deposited on Ti-6Al-4V alloy by microwave plasma chemical vapor deposition (MPCVD). By depositing a well-adhered protective layer of diamond on an alloy component, its hardness, wear-resistance, performance, and overall lifetime could be significantly increased. However, due to the large thermal expansion mismatch between the diamond film and metal (and the corresponding residual stress induced in the film), film adhesion is typically unsatisfactory and often results in immediate delamination after processing. Therefore, it is a major goal of this research to improve adhesion of the diamond film to the alloy substrate. Through the use of innovative processing techniques involving MPCVD deposition conditions and methane (CH4), nitrogen (N2), and hydrogen (H2) chemistry, we have achieved diamond films which consistently adhere to the alloy substrate. In addition, we have discovered that, with the appropriate choice of deposition conditions, the film structure can be tailored to range from highly crystalline, well-faceted diamond to nanocrystalline diamond with extremely low surface roughness (as low as 27 nm). The relationship between processing and structure was studied using in-situ optical emission spectroscopy, micro-Raman spectroscopy, surface profilometry, glancing-angle x-ray diffraction, and scanning electron microscopy. We observe that when nitrogen is added to the H2/CH4 feedgas mixture, a carbon-nitrogen (CN) emission band arises and its relative abundance to the carbon dimer (C2) gas species is shown to have a pronounced influence on the diamond film structure. By appropriate choice of deposition chemistry and conditions, we can tailor the diamond film structure and its corresponding properties. The mechanical properties of interest in this thesis are those relating to the integrity of the film/substrate interface, as well as the

Dual-ion-beam deposition of carbon films with diamond-like properties

NASA Technical Reports Server (NTRS)

Mirtich, M. J.; Swec, D. M.; Angus, J. C.

1985-01-01

A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

Method and apparatus for making diamond-like carbon films

DOEpatents

Pern, Fu-Jann [Golden, CO; Touryan, Kenell J [Indian Hills, CO; Panosyan, Zhozef Retevos [Yerevan, AM; Gippius, Aleksey Alekseyevich [Moscow, RU

2008-12-02

Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm.sup.2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Daisuke; Yang, Chen; Lin, Liwei

2016-02-01

We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O{sub 2} in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000)more » was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.« less

Field electron emission from diamond and related films synthesized by plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lu, Xianfeng

The focus of this thesis is the study of the field electron emission (FEE) of diamond and related films synthesized by plasma enhanced chemical vapor deposition. The diamond and related films with different morphologies and compositions were prepared in a microwave plasma-enhanced chemical vapor deposition (CVD) reactor and a hot filament CVD reactor. Various analytical techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy were employed to characterize the surface morphology and chemical composition. The influence of surface morphology on the field electron emission property of diamond films was studied. The emission current of well-oriented microcrystalline diamond films is relatively small compared to that of randomly oriented microcrystalline diamond films. Meanwhile, the nanocrystalline diamond film has demonstrated a larger emission current than microcrystalline diamond films. The nanocone structure significantly improves the electron emission current of diamond films due to its strong field enhancement effect. The sp2 phase concentration also has significant influence on the field electron emission property of diamond films. For the diamond films synthesized by gas mixture of hydrogen and methane, their field electron emission properties were enhanced with the increase of methane concentration. The field electron emission enhancement was attributed to the increase of sp2 phase concentration, which increases the electrical conductivity of diamond films. For the diamond films synthesized through graphite etching, the growth rate and nucleation density of diamond films increase significantly with decreasing hydrogen flow rate. The field electron emission properties of the diamond films were also enhanced with the decrease of hydrogen flow rate. The field electron emission enhancement can be also attributed to the increase of the sp 2 phase concentration. In addition, the deviation of the experimental

Deposition of diamond-like films by ECR microwave plasma

NASA Technical Reports Server (NTRS)

Shing, Yuh-Han (Inventor); Pool, Frederick S. (Inventor)

1995-01-01

Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.

PubMed

Samudrala, Gopi K; Vohra, Yogesh K; Walock, Michael J; Miles, Robin

2014-01-13

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.

Method for producing fluorinated diamond-like carbon films

DOEpatents

Hakovirta, Marko J.; Nastasi, Michael A.; Lee, Deok-Hyung; He, Xiao-Ming

2003-06-03

Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C.sub.2 H.sub.2) and hexafluoroethane (C.sub.2 F.sub.6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.

Smooth diamond films as low friction, long wear surfaces

DOEpatents

Gruen, Dieter M.; Krauss, Alan R.; Erdemir, Ali; Bindal, Cuma; Zuiker, Christopher D.

1999-01-01

An article and method of manufacture of a nanocrystalline diamond film. The nanocrystalline film is prepared by forming a carbonaceous vapor, providing an inert gas containing gas stream and combining the gas stream with the carbonaceous containing vapor. A plasma of the combined vapor and gas stream is formed in a chamber and fragmented carbon species are deposited onto a substrate to form the nanocrystalline diamond film having a root mean square flatness of about 50 nm deviation from flatness in the as deposited state.

High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

NASA Technical Reports Server (NTRS)

Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

1997-01-01

The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

A thermal-sensitive device fabricated with diamond film and a planar microelectrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Changzhi Gu; Zengsun Jin; Xianyi Lu

1995-12-31

Polycrystalline diamond film were deposited by means of the hot filament CVD technique (HFCVD) onto a planar interdigital Ti microelectrode arrays, and forming a thermal-sensitive device, The resistor changes of diamond film caused by temperature are shown to be sensitive, reproducible, rapid and stable thermal-sensitive device. The characteristics of thermal-sensitive for this device was study. Functionalized diamond film deposited onto planar microelectrode arrays can easily detect temperature from 20{degrees}C to 700{degrees}C.

Effect of chromium underlayer on the properties of nano-crystalline diamond films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Yoshitake, T.; Katamune, Y.; Bowden, M.; Nandasiri, M.; Ghantasala, M.; Mancini, D. C.; Thevuthasan, S.; Kayani, A.

2013-01-01

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

Raman Microscopic Characterization of Proton-Irradiated Polycrystalline Diamond Films

NASA Technical Reports Server (NTRS)

Newton, R. L.; Davidson, J. L.; Lance, M. J.

2004-01-01

The microstructural effects of irradiating polycrystalline diamond films with proton dosages ranging from 10(exp 15) to 10(exp 17) H(+) per square centimeter was examined. Scanning Electron Microscopy and Raman microscopy were used to examine the changes in the diamond crystalline lattice as a function of depth. Results indicate that the diamond lattice is retained, even at maximum irradiation levels.

Formation of diamond nanoparticle thin films by electrophoretic deposition

NASA Astrophysics Data System (ADS)

Goto, Yosuke; Ohishi, Fujio; Tanaka, Kuniaki; Usui, Hiroaki

2016-03-01

Thin films of diamond nanoparticles were prepared by electrophoretic deposition (EPD) using 0.5 wt % dispersions in water, ethanol, and 2-propanol. The film growth rate increased with increasing voltage applied to the electrodes. However, an excessive increase in voltage caused the degradation of film morphology. The optimum voltage was 4 V with an electrode separation of 5 mm. The film growth rate was higher in organic solvents than in water. The deposited film had a smooth surface with an average surface roughness comparable to the size of primary particles of the source material. It is notable that the EPD films had a considerably higher physical stability than spin-coated and cast films. The stability was further improved by thermally annealing the films. IR analysis revealed that the diamond nanoparticles have carboxy and amino groups on their surfaces. It is considered that the stability of the EPD films originate from a chemical reaction between these functional groups.

Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

NASA Astrophysics Data System (ADS)

Miksovsky, J.; Voss, A.; Kozarova, R.; Kocourek, T.; Pisarik, P.; Ceccone, G.; Kulisch, W.; Jelinek, M.; Apostolova, M. D.; Reithmaier, J. P.; Popov, C.

2014-04-01

Diamond and diamond-like carbon (DLC) films possess a set of excellent physical and chemical properties which together with a high biocompatibility make them attractive candidates for a number of medical and biotechnological applications. In the current work thin ultrananocrystalline diamond (UNCD) and DLC films were comparatively investigated with respect to cell attachment and proliferation after different surface modifications. The UNCD films were prepared by microwave plasma enhanced chemical vapor deposition, the DLC films by pulsed laser deposition (PLD). The films were comprehensively characterized with respect to their basic properties, e.g. crystallinity, morphology, chemical bonding nature, etc. Afterwards the UNCD and DLC films were modified applying O2 or NH3/N2 plasmas and UV/O3 treatments to alter their surface termination. The surface composition of as-grown and modified samples was studied by X-ray photoelectron spectroscopy (XPS). Furthermore the films were characterized by contact angle measurements with water, formamide, 1-decanol and diiodomethane; from the results obtained the surface energy with its dispersive and polar components was calculated. The adhesion and proliferation of MG63 osteosarcoma cells on the different UNCD and DLC samples were assessed by measurement of the cell attachment efficiency and MTT assays. The determined cell densities were compared and correlated with the surface properties of as-deposited and modified UNCD and DLC films.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

PubMed Central

Samudrala, Gopi K.; Vohra, Yogesh K.; Walock, Michael J.; Miles, Robin

2014-01-01

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 μm/h on silicon, and 4 μm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon. PMID:28788461

Method for the preparation of nanocrystalline diamond thin films

DOEpatents

Gruen, Dieter M.; Krauss, Alan R.

1998-01-01

A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garratt, Elias; AlFaify, Salem; Yoshitake, T.

2013-01-11

This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphiticmore » phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.« less

Surface Functionalization of Diamond Films by Photoreaction of Elemental Sulfur and Their Surface Properties

NASA Astrophysics Data System (ADS)

Nakamura, Takako; Ohana, Tsuguyori

2012-08-01

A useful method for direct sulfurization of diamond film surfaces by photoreaction of elemental sulfur was developed. The introduction of thiol groups onto the diamond films was confirmed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy, and scanning electron microscopy (SEM) analyses. The sulfur-modified diamond films attached to gold nanoparticles by self-assembly. The degrees of thiol group introduction and gold attachment were found to depend on photoirradiation time by monitoring by XPS. The gold-modified diamond film was observed to act as a surface-enhanced Raman scattering substrate for measurement of picric acid.

A novel approach of deposition for uniform diamond films on circular saw blades

NASA Astrophysics Data System (ADS)

Hongxiu, ZHOU; Boya, YUAN; Jilei, LYU; Nan, JIANG

2017-11-01

Uniform diamond films are highly desirable for cutting industries, due to their high performance and long lifetime used on cutting tools. Nevertheless, they are difficult to obtain on cutting tools with complicated shapes, greatly limiting the applications of diamond films. In this study, a novel approach of deposition for uniform diamond films is proposed, on circular saw blades made of cemented carbide using reflectors of brass sheets. Diamond films are deposited using hot filament chemical vapor deposition (HFCVD). A novel concave structure of brass sheets is designed and fabricated, improving the distribution of temperature field, and overcoming the disadvantages of the conventional HFCVD systems. This increases the energy efficiency of use without changing the structure and increasing the cost of HFCVD. The grains are refined and the intensities of diamond peaks are strengthened obviously, which is confirmed by scanning electron microscopy and Raman spectra respectively.

Method for the preparation of nanocrystalline diamond thin films

DOEpatents

Gruen, D.M.; Krauss, A.R.

1998-06-30

A method and system are disclosed for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip. 40 figs.

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Elfimchev, S.; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-01

In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360-520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very effective at elevated temperatures.

Self-Lubricating, Wear-Resistant Diamond Films Developed for Use in Vacuum Environment

NASA Technical Reports Server (NTRS)

1996-01-01

Diamond's outstanding properties--extreme hardness, chemical and thermal inertness, and high strength and rigidity--make it an ideal material for many tribological applications, such as the bearings, valves, and engine parts in the harsh environment found in internal-combustion engines, jet engines, and space propulsion systems. It has been demonstrated that chemical-vapor-deposited diamond films have low coefficients of friction (on the order of 0.01) and low wear rates (less than 10(sup -7) mm (sup 3/N-m)) both in humid air and dry nitrogen but that they have both high coefficients of friction (greater than 0.4) and high wear rates (on the order of 1(sup -4) mm sup 3/N-m)) in vacuum. It is clear that surface modifications that provide acceptable levels of friction and wear properties will be necessary before diamond films can be used for tribological applications in a space-like, vacuum environment. Previously, it was found that coatings of amorphous, non-diamond carbon can provide low friction in vacuum. Therefore, to reduce the friction and wear of diamond film in vacuum, carbon ions were implanted in an attempt to form a surface layer of amorphous carbon phases on the diamond films.

Electronic Power System Application of Diamond-Like Carbon Films

NASA Technical Reports Server (NTRS)

Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

2003-01-01

A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

Fabrication of diamond shells

DOEpatents

Hamza, Alex V.; Biener, Juergen; Wild, Christoph; Woerner, Eckhard

2016-11-01

A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.

Morphological Transition in Diamond Thin-Films Induced by Boron in a Microwave Plasma Deposition Process.

PubMed

Baker, Paul A; Goodloe, David R; Vohra, Yogesh K

2017-11-14

The purpose of this study is to understand the basic mechanisms responsible for the synthesis of nanostructured diamond films in a microwave plasma chemical vapor deposition (MPCVD) process and to identify plasma chemistry suitable for controlling the morphology and electrical properties of deposited films. The nanostructured diamond films were synthesized by MPCVD on Ti-6Al-4V alloy substrates using H₂/CH₄/N₂ precursor gases and the plasma chemistry was monitored by the optical emission spectroscopy (OES). The synthesized thin-films were characterized by x -ray diffraction and scanning electron microscopy. The addition of B₂H₆ to the feedgas during MPCVD of diamond thin-films changes the crystal grain size from nanometer to micron scale. Nanostructured diamond films grown with H₂/CH₄/N₂ gases demonstrate a broad (111) Bragg x -ray diffraction peak (Full-Width at Half-Maximum (FWHM) = 0.93° 2θ), indicating a small grain size, whereas scans show a definite sharpening of the diamond (111) peak (FWHM = 0.30° 2θ) with the addition of boron. OES showed a decrease in CN (carbon-nitrogen) radical in the plasma with B₂H₆ addition to the gas mixture. Our study indicates that CN radical plays a critical role in the synthesis of nanostructured diamond films and suppression of CN radical by boron-addition in the plasma causes a morphological transition to microcrystalline diamond.

Nitrogen-Doped Diamond Film for Optical Investigation of Hemoglobin Concentration

PubMed Central

Majchrowicz, Daria; Kosowska, Monika; Struk, Przemysław; Sobaszek, Michał; Jędrzejewska-Szczerska, Małgorzata

2018-01-01

In this work we present the fabrication and characterization of a diamond film which can be utilized in the construction of optical sensors for the investigation of biological samples. We produced a nitrogen-doped diamond (NDD) film using a microwave plasma enhanced chemical vapor deposition (MWPECVD) system. The NDD film was investigated with the use of scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. The NDD film was used in the construction of the fiber optic sensor. This sensor is based on the Fabry–Pérot interferometer working in a reflective mode and the NDD film is utilized as a reflective layer of this interferometer. Application of the NDD film allowed us to obtain the sensor of hemoglobin concentration with linear work characteristics with a correlation coefficient (R2) equal to 0.988. PMID:29324715

Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumant, A.V.; Auciello, O.; Yuan, H.-C

2009-05-01

Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materialsmore » integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.« less

Compositional and structural analysis of nitrogen incorporated and ion implanted diamond thin films

NASA Astrophysics Data System (ADS)

Garratt, Elias James

Significant progress in area of nano-structured thin film systems has taken place in recent decades. In particular, diamond thin film systems are being widely studied for their wear resistant, optical and electronic properties. Of the various methods researchers use to modify the structure of such films, three techniques in particular are of interest due to their versatility: modification of the growth atmosphere, growth on metalized substrates, providing an interfacial layer, and modification through post-growth ion implantation. The aim of this study is to investigate the effects each has to the structure and composition of elements. Different techniques are applied in each section; nitrogen gas dilution in a microwave plasma CVD system, diamond deposition on a metal interfacial layer and ion implantation in thin nanocrystalline diamond film. The forms of nanocrystalline diamond film resulting from such modifications are investigated using advanced spectroscopic and spectrometric techniques, as well as mechanical testing and surface mapping. The impact of these characterizations will provide valuable perspective to researchers in materials science. Understanding the changes to the structure and properties of this class of thin films, which can be induced through various mechanisms, will allow future researchers to refine these films towards technological applications in areas of hard coatings, electronics and photonics.

Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

PubMed

Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

2014-02-04

Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

PubMed

Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

2015-09-07

In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

SU-F-T-570: Comparison of Synthetic Diamond, Microionization Chamber, and Radiochromic Film for Absolute Dosimetry of VMAT Radiosurgery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popple, R; Wu, X; Kraus, J

2016-06-15

Purpose: Patient specific quality assurance of stereotactic radiosurgery (SRS) plans is challenging because of small target sizes and high dose gradients. We compared three detectors for dosimetry of VMAT SRS plans. Methods: The dose at the center of seventeen targets was measured using a synthetic diamond detector (2.2 mm diameter, 1 µm thickness), a 0.007 cm{sup 3} ionization chamber, and radiochromic film. Measurements were made in a PMMA phantom in the clinical geometry – all gantry and table angles were delivered as planned. The diamond and chamber positions were offset by 1 cm from the film plane, so the isocentermore » was shifted accordingly to place the center of the target at the detector of interest. To ensure accurate detector placement, the phantom was positioned using kV images. To account for the shift-induced difference in geometry and differing prescription doses between plans, the measurements were normalized to the expected dose calculated by the treatment planning system. Results: The target sizes ranged from 2.8 mm to 34.8 mm (median 14.8 mm). The mean measurement-to-plan ratios were 1.054, 1.076, and 1.023 for RCF, diamond, and chamber, respectively. The mean difference between the chamber and film was −3.2% and between diamond and film was 2.2%. For targets larger than 15 mm, the mean difference relative to film was −0.8% and 0.1% for chamber and diamond, respectively, whereas for targets smaller than 15 mm, the difference was −5.3% and 4.2% for chamber and diamond, respectively. The difference was significant (p=0.005) using the two-sample Kolmogorov-Smirnov test. Conclusion: The detectors agree for target sizes larger than 15 mm. Relative to film, for smaller targets the diamond detector over-responds, whereas the ionization chamber under-responds. Further work is needed to characterize detector response in modulated SRS fields.« less

Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1996-01-01

We present a summary of the research, citations of publications resulting from the research and abstracts of such publications. We have made no inventions in the performance of the work in this project. The main goals of the project were to set up a Chemical Vapor Deposition (CVD) diamond growth system attached to an UltraHigh Vacuum (UHV) atomic resolution Scanning Tunneling Microscopy (STM) system and carry out experiments aimed at studying the properties and growth of diamond films using atomic resolution UHV STM. We successfully achieved these goals. We observed, for the first time, the atomic structure of the surface of CVD grown epitaxial diamond (100) films using UHV STM. We studied the effects of atomic hydrogen on the CVD diamond growth process. We studied the electronic properties of the diamond (100) (2x1) surface, and the effect of alkali metal adsorbates such as Cs on the work function of this surface using UHV STM spectroscopy techniques. We also studied, using STM, new electronic materials such as carbon nanotubes and gold nanostructures. This work resulted in four publications in refereed scientific journals and five publications in refereed conference proceedings.

Surface Design and Engineering Toward Wear-Resistant, Self-Lubricating Diamond Films and Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1999-01-01

The tribological properties of chemical-vapor-deposited (CVD) diamond films vary with the environment, possessing a Jekyll-and-Hyde character. CVD diamond has low coefficient of friction and high wear resistance in air but high coefficient of friction and low wear resistance in vacuum. Improving the tribological functionality of materials (such as achieving low friction and good wear resistance) was an aim of this investigation. Three studies on the surface design, surface engineering, and tribology of CVD diamond have shown that its friction and wear are significantly reduced in ultrahigh vacuum. The main criteria for judging whether diamond films are an effective wear-resistant, self-lubricating material were coefficient of friction and wear rate, which must be less than 0.1 and on the order of 10(exp 6) cu mm/N(dot)m, respectively. In the first study the presence of a thin film (less than 1 micron thick) of amorphous, nondiamond carbon (hydrogenated carbon, also called diamondlike carbon or DLC) on CVD diamond greatly decreased the coefficient of friction and the wear rate. Therefore, a thin DLC film on CVD diamond can be an effective wear-resistant, lubricating coating in ultrahigh vacuum. In the second study the presence of an amorphous, nondiamond carbon surface layer formed on CVD diamond by ion implantation significantly reduced the coefficient of friction and the wear rate in ultrahigh vacuum. Therefore, such surface layers are acceptable for effective self-lubricating, wear-resistant applications of CVD diamond. In the third study CVD diamond in contact with cubic boron nitride exhibited low coefficient of friction in ultra high vacuum. Therefore, this materials combination can provide an effective self-lubricating, wear-resistant couple in ultrahigh vacuum.

Properties of planar structures based on Policluster films of diamond and AlN

NASA Astrophysics Data System (ADS)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Surface Design and Engineering Toward Wear-Resistant, Self-Lubricant Diamond Films and Coatings. Chapter 10

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1999-01-01

This chapter describes three studies on the surface design, surface engineering, and tribology of chemical-vapor-deposited (CVD) diamond films and coatings toward wear-resistant, self-lubricating diamond films and coatings. Friction mechanisms and solid lubrication mechanisms of CVD diamond are stated. Effects of an amorphous hydrogenated carbon on CVD diamond, an amorphous, nondiamond carbon surface layer formed on CVD diamond by carbon and nitrogen ion implantation, and a materials combination of cubic boron nitride and CVD diamond on the adhesion, friction, and wear behaviors of CVD diamond in ultrahigh vacuum are described. How surface modification and the selected materials couple improved the tribological functionality of coatings, giving low coefficient of friction and good wear resistance, is explained.

Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

NASA Astrophysics Data System (ADS)

Radhika, R.; Ramachandra Rao, M. S.

2016-11-01

Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming; Shvydko, Yury; Stoupin, Stanislav

A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with themore » thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.« less

Controlled in situ boron doping of diamond thin films using solution phase

NASA Astrophysics Data System (ADS)

Roy, M.; Dua, A. K.; Nuwad, J.; Girija, K. G.; Tyagi, A. K.; Kulshreshtha, S. K.

2006-12-01

Controlled boron doping of diamond film using nontoxic reagents is a challenge in itself. During the present study, attempts have been made to dope diamond films in situ with boron from a solution of boric acid (H3BO3) in methanol (CH3OH) using a specially designed bubbler that ensured continuous and controlled flow of vapors of boron precursors during deposition. The samples are thoroughly characterized using a host of techniques comprising of x-ray photoelectron spectroscopy, Raman, x-ray diffraction, and current-voltage measurements (I-V). Cross-sectional micro-Raman spectroscopy has been used to obtain depth profile of boron in diamond films. Boron concentration ([B]) in the films is found to vary linearly on a semilog scale with molarity (M) of H3BO3 in CH3OH. Lattice constant of our samples is smaller than the reported American society for testing and materials (ASTM) values due to oxygen incorporation and it increases with [B] in the diamond samples. Heavily boron doped samples exhibit Fano deformation of the Raman line shape and negative and/zero activation barrier in temperature dependent I-V measurements that indicate the formation of metallic phase in the samples. The present study illustrates the feasibility of safe and controlled boron doping of diamond films using a solution of H3BO3 in CH3OH over a significant range of [B] from semiconductor to metallic regime but with a little adverse effect due to unintentional but unavoidable incorporation of oxygen.

Microstructural Evolution of Nanocrystalline Diamond Films Due to CH4/Ar/H2 Plasma Post-Treatment Process.

PubMed

Lin, Sheng-Chang; Yeh, Chien-Jui; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I-Nan

2015-10-07

Plasma post-treatment process was observed to markedly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. TEM examinations reveal that the prime factor which improves the EFE properties of these films is the coalescence of ultrasmall diamond grains (∼5 nm) forming large diamond grains about hundreds of nanometers accompanied by the formation of nanographitic clusters along the grain boundaries due to the plasma post-treatment process. OES studies reveal the presence of large proportion of atomic hydrogen and C2 (or CH) species, which are the main ingredients that altered the granular structure of the UNCD films. In the post-treatment process, the plasma interacts with the diamond films by a diffusion process. The recrystallization of diamond grains started at the surface region of the material, and the interaction zone increased with the post-treatment period. The entire diamond film can be converted into a nanocrystalline granular structure when post-treated for a sufficient length of time.

Enhanced Photocatalytic Activity of Diamond Thin Films Using Embedded Ag Nanoparticles.

PubMed

Li, Shuo; Bandy, Jason A; Hamers, Robert J

2018-02-14

Silver nanoparticles embedded into the diamond thin films enhance the optical absorption and the photocatalytic activity toward the solvated electron-initiated reduction of N 2 to NH 3 in water. Here, we demonstrate the formation of diamond films with embedded Ag nanoparticles <100 nm in diameter. Cross-sectional scanning electron microscopy (SEM), energy-dependent SEM, and energy-dispersive X-ray analysis demonstrate the formation of encapsulated nanoparticles. Optical absorption measurements in the visible and ultraviolet region show that the resulting films exhibit plasmonic resonances in the visible and near-ultraviolet region. Measurements of photocatalytic activity using supraband gap (λ < 225 nm) and sub-band gap (λ > 225 nm) excitation show significantly enhanced ability to convert N 2 to NH 3 . Incorporation of Ag nanoparticles induces a nearly 5-fold increase in activity using a sub-band gap excitation with λ > 225 nm. Our results suggest that internal photoemission, in which electrons are excited from Ag into diamond's conduction band, is an important process that extends the wavelength region beyond diamond's band gap. Other factors, including Ag-induced optical scattering and formation of graphitic impurities are also discussed.

Improvement in plasma illumination properties of ultrananocrystalline diamond films by grain boundary engineering

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Chen, H. C.; Dong, C. L.; Leou, K. C.; Lee, C. Y.; Tai, N. H.; Lin, I. N.

2013-08-01

Microstructural evolution of ultrananocrystalline diamond (UNCD) films as a function of substrate temperature (TS) and/or by introducing H2 in Ar/CH4 plasma is investigated. Variation of the sp2 and sp3 carbon content is analyzed using UV-Raman and near-edge X-ray absorption fine structure spectra. Morphological and microstructural studies confirm that films deposited using Ar/CH4 plasma at low TS consist of a random distribution of spherically shaped ultra-nano diamond grains with distinct sp2-bonded grain boundaries, which are attributed to the adherence of CH radicals to the nano-sized diamond clusters. By increasing TS, adhering efficiency of CH radicals to the diamond lattice drops and trans-polyacetylene (t-PA) encapsulating the nano-sized diamond grains break, whereas the addition of 1.5% H2 in Ar/CH4 plasma at low TS induces atomic hydrogen that preferentially etches out the t-PA attached to ultra-nano diamond grains. Both cases make the sp3-diamond phase less passivated. This leads to C2 radicals attaching to the diamond lattice promoting elongated clustered grains along with a complicated defect structure. Such a grain growth model is highly correlated to explain the technologically important functional property, namely, plasma illumination (PI) of UNCD films. Superior PI properties, viz. low threshold field of 0.21 V/μm with a high PI current density of 4.10 mA/cm2 (at an applied field of 0.25 V/μm) and high γ-coefficient (0.2604) are observed for the UNCD films possessing ultra-nano grains with a large fraction of grain boundary phases. The grain boundary component consists of a large amount of sp2-carbon phases that possibly form interconnected paths for facilitating the transport of electrons and the electron field emission process that markedly enhance PI properties.

Characterization of N-doped polycrystalline diamond films deposited on microgrinding tools

NASA Astrophysics Data System (ADS)

Jackson, M. J.; Ahmed, W.

2005-10-01

Chemical vapor deposited diamond films have many industrial applications but are assuming increasing importance in the area of microengineering, most notably in the development of diamond coated microgrinding tools. For these applications the control of structure and morphology is of critical importance. The crystallite size, orientation, surface roughness, and the degree of sp 3 character have a profound effect on the tribological properties of the films deposited. In this article, we present experimental results on the effects of nitrogen doping on the surface morphology, crystallite size, and wear of microgrinding tools. The sp 3 character optimizes at 200 ppm nitrogen, and above this value the surface becomes much smoother and crystal sizes decrease considerably. Fracture-induced wear of the diamond grain is the most important mechanism of material removal from a microgrinding tool during the grinding process. Fracture occurs as a consequence of tensile stresses induced into diamond grains by grinding forces to which they are subjected. The relationship between the wear of diamond coated grinding tools, component grinding forces, and induced stresses in the model diamond grains is described in detail. A significant correlation was found between the maximum value of tensile stress induced in the diamond grain and the appropriate wheel-wear parameter (grinding ratio). It was concluded that the magnitude of tensile stresses induced in the diamond grain by grinding forces at the rake face is the best indicator of tool wear during the grinding process.

Optimization of chemical vapor deposition diamond films growth on steel: correlation between mechanical properties, structure, and composition.

PubMed

Laikhtman, A; Rapoport, L; Perfilyev, V; Moshkovich, A; Akhvlediani, R; Hoffman, A

2011-09-01

In the present work we perform optimization of mechanical and crystalline properties of CVD microcrystalline diamond films grown on steel substrates. A chromium-nitride (Cr-N) interlayer had been previously proposed to serve as a buffer for carbon and iron inter-diffusion and as a matching layer for the widely differing expansion coefficients of diamond and steel. However, adhesion and wear as well as crystalline perfection of diamond films are strongly affected by conditions of both Cr-N interlayer preparation and CVD diamond deposition. In this work we assess the effects of two parameters. The first one is the temperature of the Cr-N interlayer preparation: temperatures in the range of 500 degrees C-800 degrees C were used. The second one is diamond film thickness in the 0.5 microm-2 microm range monitored through variation of the deposition time from approximately 30 min to 2 hours. The mechanical properties of so deposited diamond films were investigated. For this purpose, scratch tests were performed at different indentation loads. The friction coefficient and wear loss were assessed. The mechanical and tribological properties were related to structure, composition, and crystalline perfection of diamond films which were extensively analyzed using different microscopic and spectroscopic techniques. It was found that relatively thick diamond film deposited on the Cr-N interlayer prepared at the temperature similar to that of the CVD process has the best mechanical and adhesion strength. This film was stable without visible cracks around the wear track during all scratch tests with different indentation loads. In other cases, cracking and delamination of the films took place at low to moderate indentation loads.

X-ray diffraction characterization of epitaxial CVD diamond films with natural and isotopically modified compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru; Voloshin, A. E.; Ralchenko, V. G.

2016-11-15

Comparative investigations of homoepitaxial diamond films with natural and modified isotopic compositions, grown by chemical vapor deposition (CVD) on type-Ib diamond substrates, are carried out using double-crystal X-ray diffractometry and topography. The lattice mismatch between the substrate and film is precisely measured. A decrease in the lattice constant on the order of (Δa/a){sub relax} ∼ (1.1–1.2) × 10{sup –4} is recorded in isotopically modified {sup 13}C (99.96%) films. The critical thicknesses of pseudomorphic diamond films is calculated. A significant increase in the dislocation density due to the elastic stress relaxation is revealed by X-ray topography.

Stress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Golding, B.

2016-02-02

Here, we describe a method for lateral overgrowth of low-stress single crystal diamond by chemical vapor deposition (CVD). The process is initiated by deposition of a thin (550 nm) (001) diamond layer on Ir-buffered a-plane sapphire. The diamond is partially masked by periodic thermally evaporated Au stripes using photolithography. Lateral overgrowth of the Au occurs with extremely effective filtering of threading dislocations. Thermal stress resulting from mismatch of the low thermal expansion diamond and the sapphire substrate is largely accommodated by the ductile Au layer. The stress state of the diamond is investigated by Raman spectroscopy for two thicknesses: atmore » 10 μm where the film has just overgrown the Au mask and at 180 μm where the film thickness greatly exceeds the scale of the masking. For the 10-μm film, the Raman linewidth shows spatial oscillations with the period of the Au stripes with a factor of 2 to 3 reduction relative to the unmasked region. In a 180-μm thick diamond film, the overall surface stress was extremely low, 0.00 ± 0.16 GPa, obtained from the Raman shift averaged over the 7.5mm diameter of the crystal at its surface. We conclude that the metal mask protects the overgrown diamond layer from substrate-induced thermal stress and cracking. Lastly, it is also responsible for low internal stress by reducing dislocation density by several orders of magnitude.« less

Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices

DOEpatents

Gruen, Dieter M [Downers Grove, IL; Busmann, Hans-Gerd [Bremen, DE; Meyer, Eva-Maria [Bremen, DE; Auciello, Orlando [Bolingbrook, IL; Krauss, Alan R [late of Naperville, IL; Krauss, Julie R [Naperville, IL

2004-11-02

MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

PubMed

Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

2009-06-01

A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes.

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

NASA Astrophysics Data System (ADS)

Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

2011-04-01

The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

Field emission from bias-grown diamond thin films in a microwave plasma

DOEpatents

Gruen, Dieter M.; Krauss, Alan R.; Ding, Ming Q.; Auciello, Orlando

2002-01-01

A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.

High quality factor single-crystal diamond mechanical resonators

NASA Astrophysics Data System (ADS)

Ovartchaiyapong, P.; Pascal, L. M. A.; Myers, B. A.; Lauria, P.; Bleszynski Jayich, A. C.

2012-10-01

Single-crystal diamond is a promising material for microelectromechanical systems (MEMs) because of its low mechanical loss, compatibility with extreme environments, and built-in interface to high-quality spin centers. But its use has been limited by challenges in processing and growth. We demonstrate a wafer bonding-based technique to form diamond on insulator, from which we make single-crystal diamond micromechanical resonators with mechanical quality factors as high as 338 000 at room temperature. Variable temperature measurements down to 10 K reveal a nonmonotonic dependence of quality factor on temperature. These resonators enable integration of single-crystal diamond into MEMs technology for classical and quantum applications.

Growth, characterization and device development in monocrystalline diamond films

NASA Astrophysics Data System (ADS)

Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

1995-06-01

Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

Effect of Polishing on the Friction Behaviors and Cutting Performance of Boron-Doped Diamond Films on WC-Co Inserts

NASA Astrophysics Data System (ADS)

Wang, Liang; Shen, Bin; Sun, Fanghong; Zhang, Zhiming

2014-04-01

Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman spectroscopy, 3D surface topography based on white-light interferometry and Rockwell hardness tester. The effects of mechanical polishing on the friction behavior and cutting performance of B-doped diamond are evaluated by ball-on-plate type reciprocating tribometer and turning of aluminum alloy 7075 materials, respectively. For comparison, the same tests are also conducted for the bare WC-Co inserts with smooth surface. Friction tests suggest that the unpolished and polished B-doped diamond films possess relatively low fluctuation of friction coefficient than as-received bare WC-Co samples. The average stable friction coefficient for B-doped diamond films decreases apparently after mechanical polishing. The values for WC-Co sample, unpolished and polished B-doped diamond films are approximately 0.38, 0.25 and 0.11, respectively. The cutting results demonstrate that the low friction coefficient and high adhesive strength of B-doped diamond films play an essential role in the cutting performance enhancement of the WC-Co inserts. However, the mechanical polishing process may lower the adhesive strength of B-doped diamond films. Consequently, the polished B-doped diamond coated inserts show premature wear in the machining of adhesive aluminum alloy materials.

Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

NASA Astrophysics Data System (ADS)

Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

2018-05-01

Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

2014-03-01

In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

NASA Technical Reports Server (NTRS)

Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

2001-01-01

We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet

NASA Astrophysics Data System (ADS)

Guo, Jianchao; Li, Chengming; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Hua, Chenyi; Yan, Xiongbo

2016-05-01

The addition of titanium (Ti) interlayer was verified to reduce the residual stress of diamond films by self-fracturing and facilitate the harvest of a crack-free free-standing diamond film prepared by direct current (DC) arc plasma jet. In this study, the evolution of the Ti interlayer between large-area diamond film and substrate was studied and modeled in detail. The evolution of the interlayer was found to be relevant to the distribution of the DC arc plasma, which can be divided into three areas (arc center, arc main, and arc edge). The formation rate of titanium carbide (TiC) in the arc main was faster than in the other two areas and resulted in the preferred generation of crack in the diamond film in the arc main during cooling. Sandwich structures were formed along with the growth of TiC until the complete transformation of the Ti interlayer. The interlayer released stress via self-fracture. Avoiding uneven fragile regions that formed locally in the interlayer and achieving cooperatively released stress are crucial for the preparation of large crack-free diamond films.

Trace elements in Gem-Quality Diamonds - Origin and evolution of diamond-forming fluid inclusions

NASA Astrophysics Data System (ADS)

Pearson, Graham; Krebs, Mandy; Stachel, Thomas; Woodland, Sarah; Chinn, Ingrid; Kong, Julie

2017-04-01

In the same way that melt inclusions in phenocrysts have expanded our idea of melt formation and evolution in basalts, studying fluids trapped in diamonds is providing important new constraints on the nature of diamond-forming fluids. Fibrous and cloudy diamonds trap a high but variable density of fluid inclusions and so have been extensively studied using major and trace element compositions. In contrast, constraining the nature of the diamond-forming fluid for high purity gem-quality diamonds has been restricted by the rarity of available high quality trace element data. This is due to the extremely low concentrations of impurities that gem diamonds contain - often in the ppt range. The recent discovery of fluids in gem diamonds showing similar major element chemistry to fluid-rich diamonds suggest that many diamonds may share a common spectrum of parental fluids. Here we test this idea further. Recent advances in analytical techniques, in particular the development of the "off-line" laser ablation pre-concentration approach, have allowed fully quantitative trace element data to be recovered from "fluid-poor", high quality gem diamonds. We present trace element data for gem diamonds from a variety of locations from Canada, S. Africa and Russia, containing either silicate or sulphide inclusions to examine possible paragenetic or genetic differences between fluids. REE abundance in the "gem" diamonds vary from 0.1 to 0.0001 x chondrite. To a first order, we observe the same spectrum of trace element compositions in the gem diamonds as that seen in fluid-rich "fibrous" diamonds, supporting a common origin for the fluids. REE patterns range from extremely flat (Ce/Yb)n 2.5 to 5 (commonly in sulphide-bearing diamonds) to >70, the latter having significantly greater inter-element HFSE/LILE fractionation. In general, the fluids from the sulphide-bearing diamonds are less REE-enriched than the silicate-bearing diamonds, but the ranges overlap significantly. The very

Structure and wettability property of the growth and nucleation surfaces of thermally treated freestanding CVD diamond films

NASA Astrophysics Data System (ADS)

Pei, Xiaoqiang; Cheng, Shaoheng; Ma, Yibo; Wu, Danfeng; Liu, Junsong; Wang, Qiliang; Yang, Yizhou; Li, Hongdong

2015-08-01

This paper reports the surface features and wettability properties of the (1 0 0)-textured freestanding chemical vapor deposited (CVD) diamond films after thermal exposure in air at high temperature. Thermal oxidation at proper conditions eliminates selectively nanodiamonds and non-diamond carbons in the films. The growth side of the films contains (1 0 0)-oriented micrometer-sized columns, while its nucleation side is formed of nano-sized tips. The examined wettability properties of the as-treated diamond films reveal a hydrophilicity and superhydrophilicity on the growth surface and nucleation surface, respectively, which is determined by oxygen termination and geometry structure of the surface. When the surface termination is hydrogenated, the wettability of nucleation side converted from superhydrophilicity to high hydrophobicity, while the hydrophilicity of the growth side does not change significantly. The findings open a possibility for realizing freestanding diamond films having not only novel surface structures but also multifunction applications, especially proposed on the selected growth side or nucleation side in one product.

Thick Nano-Crystalline Diamond films for fusion applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dawedeit, Christoph

This Diplomarbeit deals with the characterization of 9 differently grown diamond samples. Several techniques were used to determine the quality of these specimens for inertial confinement fusion targets. The quality of chemical vapor deposition diamond is usually considered in terms of the proportion of sp3-bonded carbon to sp2-bonded carbon in the sample. For fusion targets smoothness, Hydrogen content and density of the diamonds are further important characteristics. These characteristics are analyzed in this thesis. The research for thesis was done at Lawrence Livermore National Laboratory in collaboration with the Fraunhofer Institut für angewandte Festkörperphysik Freiburg, Germany. Additionally the Lehrstuhl fuermore » Nukleartechnik at Technical University of Germany supported the work.« less

Synthesis and tribological properties of diamond-like carbon films by electrochemical anode deposition

NASA Astrophysics Data System (ADS)

Li, Yang; Zhang, GuiFeng; Hou, XiaoDuo; Deng, DeWei

2012-06-01

Diamond-like carbon films (DLC) are deposited on Ti substrate by electrochemical anodic deposition at room temperature in pure methanol solution using a pulsed DC voltage at a range from 200 V to 2000 V. Raman spectroscopy analysis of the films reveals two broaden characteristic absorption peaks centred at ˜1350 cm-1 and 1580 cm-1, relating to D- and G-band of typical DLC films, respectively. A broad peak centred at 1325-1330 cm-1 is observed when an applied potential is 1200 V, which can confirm that the deposited films contained diamond structure phase. Tribological properties of the coated Ti substrates have been measured by means of a ball-on-plate wear test machine. A related growth mechanism of DLC films by the anodic deposition mode has also been discussed.

Biological responses of diamond-like carbon (DLC) films with different structures in biomedical application.

PubMed

Liao, T T; Zhang, T F; Li, S S; Deng, Q Y; Wu, B J; Zhang, Y Z; Zhou, Y J; Guo, Y B; Leng, Y X; Huang, N

2016-12-01

Diamond-like carbon (DLC) films are potential candidates for artificial joint surface modification in biomedical applications, and the influence of the structural features of DLC surfaces on cell functions has attracted attention in recent decades. Here, the biocompatibility of DLC films with different structures was investigated using macrophages, osteoblasts and fibroblasts. The results showed that DLC films with a low ratio of sp(2)/sp(3), which tend to have a structure similar to that of diamond, led to less inflammatory, excellent osteogenic and fibroblastic reactions, with higher cell viability, better morphology, lower release of TNF-α (tumor necrosis factor-α) and IL-6 (interleukin-6), and higher release of IL-10 (interleukin-10). The results also demonstrated that the high-density diamond structure (low ratio of sp(2)/sp(3)) of DLC films is beneficial for cell adhesion and growth because of better protein adsorption without electrostatic repulsion. These findings provide valuable insights into the mechanisms underlying inhibition of an inflammatory response and the promotion of osteoblastogenesis and fibrous propagation, and effectively build a system for evaluating the biocompatibility of DLC films. Copyright © 2016 Elsevier B.V. All rights reserved.

Effects of CPII implantation on the characteristics of diamond-like carbon films

NASA Astrophysics Data System (ADS)

Chen, Ya-Chi; Weng, Ko-Wei; Chao, Ching-Hsun; Lien, Shui-Yang; Han, Sheng; Chen, Tien-Lai; Lee, Ying-Chieh; Shih, Han-Chang; Wang, Da-Yung

2009-05-01

A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 × 10 17 ions/cm 2 and 2 × 10 17 ions/cm 2, respectively.

Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Z.; Brown, I.G.; Ager, J.W. III

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the field strength range +10 to {minus}10 MVm{sup {minus}1} was studied, and the field emission source was confirmed by a diode characteristic of the {ital I}-{ital V} curve, a straight line in the Fowler--Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was {similar_to}5 MVm{sup {minus}1}, which was similar for both kinds of carbon films.more » The highest current density for diamond films, observed at a field strength of 10 MVm{sup {minus}1}, was {similar_to}15 {mu}A cm{sup {minus}2}. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.« less

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

High-temperature Superconductivity in Diamond Films - from Fundamentals to Device Applications

DTIC Science & Technology

2014-12-20

film is later removed by acid boiling in nitric acid. The laser cutting process is completely based on CNC machine language. Therefore arbitrary...designed Hall bar shapes and converted them in CNC language. Fig 6. Laser Cutter (Alpha) to create holes in the diamond plates (Oxford Lasers). [5...diamond density is not uniform throughout the plate as it appears lighter on the right side. This could be caused by the plasma being of different

Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films

NASA Astrophysics Data System (ADS)

Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.

2017-12-01

Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.

Sandblasting induced stress release and enhanced adhesion strength of diamond films deposited on austenite stainless steel

NASA Astrophysics Data System (ADS)

Li, Xiao; Ye, Jiansong; Zhang, Hangcheng; Feng, Tao; Chen, Jianqing; Hu, Xiaojun

2017-08-01

We firstly used sandblasting to treat austenite stainless steel and then deposited a Cr/CrN interlayer by close field unbalanced magnetron sputtering on it. After that, diamond films were prepared on the interlayer. It is found that the sandblasting process induces phase transition from austenite to martensite in the surface region of the stainless steel, which decreases thermal stress in diamond films due to lower thermal expansion coefficient of martensite phase compared with that of austenite phase. The sandblasting also makes stainless steel's surface rough and the Cr/CrN interlayer film inherits the rough surface. This decreases the carburization extent of the interlayer, increases nucleation density and modifies the stress distribution. Due to lower residual stress and small extent of the interlayer's carburization, the diamond film on sandblast treated austenite stainless steel shows enhanced adhesion strength.

Surface Roughness of Various Diamond-Like Carbon Films

NASA Astrophysics Data System (ADS)

Liu, Dongping; Liu, Yanhong; Chen, Baoxiang

2006-11-01

Atomic force microscopy is used to estimate and compare the surface morphology of hydrogenated and hydrogen-free diamond-like carbon (DLC) films. The films were prepared by using DC magnetron sputtering of a graphite target, pulsed cathodic carbon arcs, electron cyclotron resonance (ECR), plasma source ion implantation and dielectric barrier discharge (DBD). The difference in the surface structure is presented for each method of deposition. The influences of various discharge parameters on the film surface properties are discussed based upon the experimental results. The coalescence process via the diffusion of adsorbed carbon species is responsible for the formation of hydrogen-free DLC films with rough surfaces. The films with surface roughness at an atomic level can be deposited by energetic ion impacts in a highly ionized carbon plasma. The dangling bonds created by atomic hydrogen lead to the uniform growth of hydrocarbon species at the a-C:H film surfaces of the ECR or DBD plasmas.

Microstructural evolution of diamond films from CH{sub 4}/H{sub 2}/N{sub 2} plasma and their enhanced electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sankaran, K. J.; Tai, N. H., E-mail: nhtai@mx.nthu.edu.tw; Lin, I. N., E-mail: inanlin@mail.tku.edu.tw

2015-02-21

The influence of N{sub 2} concentration in CH{sub 4}/H{sub 2}/N{sub 2} plasma on microstructural evolution and electrical properties of diamond films is systematically investigated. While the diamond films grown in CH{sub 4}/H{sub 2} plasma contain large diamond grains, for the diamond films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma, the microstructure drastically changed, resulting in ultra-nanosized diamond grains with Fd3m structure and a{sub 0} = 0.356 nm, along with the formation of n-diamond (n-D), a metastable form of diamond with space group Fm3m and a{sub 0} = 0.356 nm, and i-carbon (i-C) clusters, the bcc structured carbon with a{sub 0} = 0.432 nm. In addition, these films contain widemore » grain boundaries containing amorphous carbon (a-C). The electron field emission (EFE) studies show the best EFE behavior for 4% N{sub 2} films among the CH{sub 4}/H{sub 2}/N{sub 2} grown diamond films. They possess the lowest turn-on field value of 14.3 V/μm and the highest EFE current density value of 0.37 mA/cm{sup 2} at an applied field of 25.4 V/μm. The optical emission spectroscopy studies confirm that CN species are the major criterion to judge the changes in the microstructure of the films. It seems that the grain boundaries can provide electron conduction networks to transport efficiently the electrons to emission sites for field emission, as long as they have sufficient thickness. Whether the matrix nano-sized grains are 3C-diamond, n-D or i-C is immaterial.« less

Effect of diamond-like carbon thin film coated acrylic resin on candida albicans biofilm formation.

PubMed

Queiroz, José Renato Cavalcanti; Fissmer, Sara Fernanda; Koga-Ito, Cristiane Yumi; Salvia, Ana C R D; Massi, Marcos; Sobrinho, Argermiro Soares da Silva; Júnior, Lafayette Nogueira

2013-08-01

The purpose of this study was to evaluate the effect of diamond-like carbon thin films doped and undoped with silver nanoparticles coating poly(methyl methacrylate) (PMMA) on Candida albicans biofilm formation. The control of biofilm formation is important to prevent oral diseases in denture users. Forty-five PMMA disks were obtained, finished, cleaned in an ultrasonic bath, and divided into three groups: Gc, no surface coating (control group); Gdlc, coated with diamond-like carbon film; and Gag, coated with diamond-like carbon film doped with silver nanoparticles. The films were deposited using a reactive magnetron sputtering system (physical vapor deposition process). The specimens were characterized by optical profilometry, atomic force microscopy, and Rutherford backscattering spectroscopy analyses that determined differences in chemical composition and morphological structure. Following sterilization of the specimens by γ-ray irradiation, C. albicans (ATCC 18804) biofilms were formed by immersion in 2 ml of Sabouraud dextrose broth inoculated with a standardized fungal suspension. After 24 hours, the number of colony forming units (cfu) per specimen was counted. Data concerning biofilm formation were analyzed using ANOVA and the Tukey test (p < 0.05). C. albicans biofilm formation was significantly influenced by the films (p < 0.00001), reducing the number of cfu, while not affecting the roughness parameters (p > 0.05). The Tukey test showed no significant difference between Gdlc and Gag. Films deposited were extremely thin (∼50 nm). The silver particles presented a diameter between 60 and 120 nm and regular distribution throughout the film surface (to Gag). Diamond-like carbon films, doped or undoped with silver nanoparticles, coating the base of PMMA-based dentures could be an alternative procedure for preventing candidosis in denture users. © 2013 by the American College of Prosthodontists.

Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

NASA Astrophysics Data System (ADS)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

Uncovering the Fundamental Nature of Tribological Interfaces: High Resolution Tribology and Spectroscopy of Ultrahard Nanostructured Diamond Films for MEMS and Beyond

DTIC Science & Technology

2007-12-31

Wisconsin-Madison) for 2? ol !> o "S \\ % M 31 Statement of Objectives The original objectives of the proposal were as follows: 1. Obtain high-quality...performed multiple PEEM experiments on wear tracks on carbon-based films and polysilicon micro-electro mechanical systems (MEMS) devices, a comprehensive... polysilicon MEMS device known as the "nanotractor", and studies of the structure and composition of UNCD, ta-C, and nanocrystalline diamond (NCD) films. They

Optical properties of diamond like carbon nanocomposite thin films

NASA Astrophysics Data System (ADS)

Alam, Md Shahbaz; Mukherjee, Nillohit; Ahmed, Sk. Faruque

2018-05-01

The optical properties of silicon incorporated diamond like carbon (Si-DLC) nanocomposite thin films have been reported. The Si-DLC nanocomposite thin film deposited on glass and silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process. Fourier transformed infrared spectroscopic analysis revealed the presence of different bonding within the deposited films and deconvolution of FTIR spectra gives the chemical composition i.e., sp3/sp2 ratio in the films. Optical band gap calculated from transmittance spectra increased from 0.98 to 2.21 eV with a variation of silicon concentration from 0 to 15.4 at. %. Due to change in electronic structure by Si incorporation, the Si-DLC film showed a broad photoluminescence (PL) peak centered at 467 nm, i.e., in the visible range and its intensity was found to increase monotonically with at. % of Si.

Thin film diamond temperature sensor array for harsh aerospace environment

NASA Technical Reports Server (NTRS)

Aslam, M.; Masood, A.; Fredricks, R. J.; Tamor, M. A.

1992-01-01

The feasibility of using polycrystalline CVD diamond films as temperature sensors in harsh aerospace environment associated with hypersonic flights was tested using patterned diamond resistors, fabricated on flat or curved oxidized Si surfaces, as temperature sensors at temperatures between 20 and 1000 C. In this temperature range, the measured resistance was found to vary over 3 orders of magnitude and the temperature coefficient of resistance to change from 0.017/K to 0.003/K. After an annealing treatment, the resistance change was reproducible within 1 percent on the entire temperature range for short measuring times.

Modification of insulating diamond-like films by pulsed UV laser emission

NASA Astrophysics Data System (ADS)

Ageev, V. P.; Glushko, T. N.; Dorfman, V. F.; Kuzmichev, A. V.; Pypkin, B. N.

1991-07-01

The basic regimes of the modification of diamond-like a-C/Si/O:H films by the emission of the KrF laser are investigated. In particular, attention is given to the effect of the graphitization process on the spatial resolution of the dimensional treament. The possibility of the submicron cross-linking of the films using the methods of ablative UV laser lithography is demonstrated.

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

NASA Astrophysics Data System (ADS)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

The bonding of protective films of amorphic diamond to titanium

NASA Astrophysics Data System (ADS)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

1994-01-01

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Lunar Production and Application of Solar Cells, and Synthesis of Diamond Film

NASA Technical Reports Server (NTRS)

Fang, P. H.

1991-01-01

Two projects which are carried out under the Summer Faculty Fellowship Program-1991 are discussed. A conceptual design of a solar cell manufacturing plant on a lunar base is discussed. This is a large program that requires a continuous and expanded effort, the present status of which is reflected here. An experiment on the synthesis of diamond film is discussed. Encouraging, but not yet conclusive evidence has been obtained on a new method to synthesize diamond film. The procedures and observations are presented. A third project is an analysis of the solar cell performance over five years on the moon based on Apollo missions. A paper has been completed and will be submitted to the journal Solar Cells for publication.

Development of a templated approach to fabricate diamond patterns on various substrates.

PubMed

Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

2014-06-11

We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

PubMed

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

2013-01-18

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

Effect of slurry composition on the chemical mechanical polishing of thin diamond films

NASA Astrophysics Data System (ADS)

Werrell, Jessica M.; Mandal, Soumen; Thomas, Evan L. H.; Brousseau, Emmanuel B.; Lewis, Ryan; Borri, Paola; Davies, Philip R.; Williams, Oliver A.

2017-12-01

Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films' various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.

Thermal Transport in Diamond Films for Electronics Thermal Management

DTIC Science & Technology

2018-03-01

AFRL-RY-WP-TR-2017-0219 THERMAL TRANSPORT IN DIAMOND FILMS FOR ELECTRONICS THERMAL MANAGEMENT Samuel Graham Georgia Institute of Technology MARCH...general public, including foreign nationals. Copies may be obtained from the Defense Technical Information Center (DTIC) (http://www.dtic.mil...Signature// JOHN D. BLEVINS, Program Manager ROSS W. DETTMER, Chief Devices for Sensing Branch Devices for Sensing Branch Aerospace Components

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

PubMed

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

The thermal conductivity of chemical-vapor-deposited diamond films on silicon

NASA Astrophysics Data System (ADS)

Graebner, J. E.; Mucha, J. A.; Seibles, L.; Kammlott, G. W.

1992-04-01

The thermal conductivity of chemical-vapor-deposited diamond films on silicon is measured for the case of heat flow parallel to the plane of the film. A new technique uses thin-film heaters and thermometers on a portion of the film which is made to be free standing by etching away the substrate. Effects of thermal radiation are carefully avoided by choosing the length scale properly. Data for several films yield thermal conductivities in the range 2-6 W/cm C. This is comparable to copper (4 W/cm C) and is in a range that would be useful as a thin-film dielectric material, provided that the interface thermal resistance can be minimized. The conductivity varies inversely with the growth rate and the Raman linewidth.

Impact resistance performance of diamond film on a curved molybdenum substrate

NASA Astrophysics Data System (ADS)

Chen, Yang; Gou, Li

2017-08-01

Diamond films with different thicknesses were deposited on flat and curved molybdenum substrate by the microwave plasma chemical vapour deposition (MPCVD) method. Scanning electronic microscopy, atomic force microscopy and Raman spectroscopy were employed to characterise the morphology, the surface roughness and the composition of the films, respectively. A NanoTest system was used for hardness, elastic modulus and nanoimpact tests. The curved surface and ductility of the molybdenum substrate allow large deformation for the thinner films. The substrate has less effect on impact for the thicker film, the deformation of which is mainly determined by the film composition. Under a load of 50 mN and 75 cycles, less deformation occurred for the 22 μm thick film on the curved molybdenum substrate.

Micro-Raman Analysis of Irradiated Diamond Films

NASA Technical Reports Server (NTRS)

Newton, Robert L.

2003-01-01

Owing to its unique and robust physical properties, diamond is a much sought after material for use in advanced technologies, even in Microelectromechanical Systems (MEMS). The volume and weight savings promised by MEMS-based devices are of particular interest to spaceflight applications. However, much basic materials science research remains to be completed in this field. Results of micro-Raman analysis of proton (10(exp 15) - 10(exp 17) H(+)/sq cm doses) irradiated chemical vapor deposited (CVD) films are presented and indicate that their microstructure is retained even after high radiation exposure.

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Cuiping, E-mail: licp226@126.com, E-mail: limingji@163.com; Li, Mingji, E-mail: licp226@126.com, E-mail: limingji@163.com; Wu, Xiaoguo

2016-04-07

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Timore » interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.« less

Effect of slurry composition on the chemical mechanical polishing of thin diamond films

PubMed Central

Werrell, Jessica M.; Mandal, Soumen; Thomas, Evan L. H.; Brousseau, Emmanuel B.; Lewis, Ryan; Borri, Paola; Davies, Philip R.; Williams, Oliver A.

2017-01-01

Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones. PMID:29057022

Highly oriented diamond films on Si: growth, characterization, and devices

NASA Astrophysics Data System (ADS)

Stoner, Brian R.; Malta, D. M.; Tessmer, A. J.; Holmes, J.; Dreifus, David L.; Glass, R. C.; Sowers, A.; Nemanich, Robert J.

1994-04-01

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method

NASA Astrophysics Data System (ADS)

Oleszkiewicz, Waldemar; Kijaszek, Wojciech; Gryglewicz, Jacek; Zakrzewski, Adrian; Gajewski, Krzysztof; Kopiec, Daniel; Kamyczek, Paulina; Popko, Ewa; Tłaczała, Marek

2013-07-01

The work presents the results of a research carried out with Plasmalab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The deposition processes were carried out in CH4 or CH4/H2 atmosphere and the state of the plasma was investigated by the OES method. The RF plasma was capacitively coupled by 13.56 MHz generator with supporting ICP generator (13.56 Mhz). The deposition processes were conducted in constant value of RF generator's power and resultant value of the DC Bias. The power values of RF generator was set at 70 W and the power values of ICP generator was set at 300 W. In this work we focus on the influence of DLC film's thickness on optical, electrical and structural properties of the deposited DLC films. The quality of deposited DLC layers was examined by the Raman spectroscopy, AFM microscopy and spectroscopic ellipsometry. In the investigated DLC films the calculated sp3 content was ranging from 60 % to 70 %. The films were characterized by the refractive index ranging from 2.03 to 2.1 and extinction coefficient ranging from 0.09 to 0.12.

Epithelial cell morphology and adhesion on diamond films deposited and chemically modified by plasma processes.

PubMed

Rezek, Bohuslav; Ukraintsev, Egor; Krátká, Marie; Taylor, Andrew; Fendrych, Frantisek; Mandys, Vaclav

2014-09-01

The authors show that nanocrystalline diamond (NCD) thin films prepared by microwave plasma enhanced chemical vapor deposition apparatus with a linear antenna delivery system are well compatible with epithelial cells (5637 human bladder carcinoma) and significantly improve the cell adhesion compared to reference glass substrates. This is attributed to better adhesion of adsorbed layers to diamond as observed by atomic force microscopy (AFM) beneath the cells. Moreover, the cell morphology can be adjusted by appropriate surface treatment of diamond by using hydrogen and oxygen plasma. Cell bodies, cytoplasmic rims, and filopodia were characterized by Peakforce AFM. Oxidized NCD films perform better than other substrates under all conditions (96% of cells adhered well). A thin adsorbed layer formed from culture medium and supplemented with fetal bovine serum (FBS) covered the diamond surface and played an important role in the cell adhesion. Nevertheless, 50-100 nm large aggregates formed from the RPMI medium without FBS facilitated cell adhesion also on hydrophobic hydrogenated NCD (increase from 23% to 61%). The authors discuss applicability for biomedical uses.

Diamond Coatings

NASA Technical Reports Server (NTRS)

1990-01-01

Advances in materials technology have demonstrated that it is possible to get the advantages of diamond in a number of applications without the cost penalty, by coating and chemically bonding an inexpensive substrate with a thin film of diamond-like carbon (DLC). Diamond films offer tremendous technical and economic potential in such advances as chemically inert protective coatings; machine tools and parts capable of resisting wear 10 times longer; ball bearings and metal cutting tools; a broad variety of optical instruments and systems; and consumer products. Among the American companies engaged in DLC commercialization is Diamonex, Inc., a diamond coating spinoff of Air Products and Chemicals, Inc. Along with its own proprietary technology for both polycrystalline diamond and DLC coatings, Diamonex is using, under an exclusive license, NASA technology for depositing DLC on a substrate. Diamonex is developing, and offering commercially, under the trade name Diamond Aegis, a line of polycrystalline diamond-coated products that can be custom tailored for optical, electronic and engineering applications. Diamonex's initial focus is on optical products and the first commercial product is expected in late 1990. Other target applications include electronic heat sink substrates, x-ray lithography masks, metal cutting tools and bearings.

Superconductivity in CVD diamond films.

PubMed

Takano, Yoshihiko

2009-06-24

A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and magnetic measurements and so on. This review elucidates the physical properties and mechanism of diamond superconductor as a special superconductivity that occurs in semiconductors.

The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth Using Emission Electron Microscopy

DTIC Science & Technology

1993-12-01

diamond carbon on diamond Measurements of CVD diamond grown directly on Mo TEM specimen grids were made through a collaboration with the Fritz Haber ...Hawaii, May 1993. 2. --- , University of Illinois at Chicago, March 1993. 3. --- , Fritz Haber Institute, Berlin, June 1993. 3.0 Appendix: 8 1 Real...University, Athens OH 45701 -2979 *Permanent address: Fritz Haber Institute, Berlin, Germany. Thin (1Onm) carbon films are found to adhere to Chemical Vapor

The impact of diamond nanocrystallinity on osteoblast functions.

PubMed

Yang, Lei; Sheldon, Brian W; Webster, Thomas J

2009-07-01

Nanocrystalline diamond has been proposed as an anti-abrasive film on orthopedic implants. In this study, osteoblast (bone forming cells) functions including adhesion (up to 4h), proliferation (up to 5 days) and differentiation (up to 21 days) on different diamond film topographies were systematically investigated. In order to exclude interferences from changes in surface chemistry and wettability (energy), diamond films with nanometer and micron scale topographies were fabricated through microwave plasma enhanced chemical-vapor-deposition and hydrogen plasma treatment. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and water contact angle measurements verified the similar surface chemistry and wettability but varied topographies for all of the diamond films prepared on silicon in this study. Cytocompatibility assays demonstrated enhanced osteoblast functions (including adhesion, proliferation, intracellular protein synthesis, alkaline phosphatase activity and extracellular calcium deposition) on nanocrystalline diamond compared to submicron diamond grain size films for all time periods tested up to 21 days. An SEM study of osteoblast attachment helped to explain the topographical impact diamond had on osteoblast functions by showing altered filopodia extensions on the different diamond topographies. In summary, these results provided insights into understanding the role diamond nanotopography had on osteoblast interactions and more importantly, the application of diamond films to improve orthopedic implant lifetimes.

Influence of coil current modulation on polycrystalline diamond film deposition by irradiation of Ar/CH4/H2 inductively coupled thermal plasmas

NASA Astrophysics Data System (ADS)

Betsuin, Toshiki; Tanaka, Yasunori; Arai, T.; Uesugi, Y.; Ishijima, T.

2018-03-01

This paper describes the application of an Ar/CH4/H2 inductively coupled thermal plasma with and without coil current modulation to synthesise diamond films. Induction thermal plasma with coil current modulation is referred to as modulated induction thermal plasma (M-ITP), while that without modulation is referred to as non-modulated ITP (NM-ITP). First, spectroscopic observations of NM-ITP and M-ITP with different modulation waveforms were made to estimate the composition in flux from the thermal plasma by measuring the time evolution in the spectral intensity from the species. Secondly, we studied polycrystalline diamond film deposition tests on a Si substrate, and we studied monocrystalline diamond film growth tests using the irradiation of NM-ITP and M-ITP. From these tests, diamond nucleation effects by M-ITP were found. Finally, following the irradiation results, we attempted to use a time-series irradiation of M-ITP and NM-ITP for polycrystalline diamond film deposition on a Si substrate. The results indicated that numerous larger diamond particles were deposited with a high population density on the Si substrate by time-series irradiation.

Diamond network: template-free fabrication and properties.

PubMed

Zhuang, Hao; Yang, Nianjun; Fu, Haiyuan; Zhang, Lei; Wang, Chun; Huang, Nan; Jiang, Xin

2015-03-11

A porous diamond network with three-dimensionally interconnected pores is of technical importance but difficult to be produced. In this contribution, we demonstrate a simple, controllable, and "template-free" approach to fabricate diamond networks. It combines the deposition of diamond/β-SiC nanocomposite film with a wet-chemical selective etching of the β-SiC phase. The porosity of these networks was tuned from 15 to 68%, determined by the ratio of the β-SiC phase in the composite films. The electrochemical working potential and the reactivity of redox probes on the diamond networks are similar to those of a flat nanocrystalline diamond film, while their surface areas are hundreds of times larger than that of a flat diamond film (e.g., 490-fold enhancement for a 3 μm thick diamond network). The marriage of the unprecedented physical/chemical features of diamond with inherent advantages of the porous structure makes the diamond network a potential candidate for various applications such as water treatment, energy conversion (batteries or fuel cells), and storage (capacitors), as well as electrochemical and biochemical sensing.

Synthesis of ultra-nano-carbon composite materials with extremely high conductivity by plasma post-treatment process of ultrananocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, Chien-Jui; Leou, Keh-Chyang; Manoharan, Divinah

2015-08-24

Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH{sub 4}/N{sub 2} plasma ppt-processed films exhibit high conductivity of σ = 1099 S/cm as well as excellent EFE properties with turn-on field of E{sub 0} = 2.48 V/μm (J{sub e} = 1.0 mA/cm{sup 2} at 6.5 V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.

Microplasma device architectures with various diamond nanostructures

NASA Astrophysics Data System (ADS)

Kunuku, Srinivasu; Jothiramalingam Sankaran, Kamatchi; Leou, Keh-Chyang; Lin, I.-Nan

2017-02-01

Diamond nanostructures (DNSs) were fabricated from three different morphological diamonds, microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films, using a reactive ion etching method. The plasma illumination (PI) behavior of microplasma devices using the DNSs and the diamond films as cathode were investigated. The Paschen curve approach revealed that the secondary electron emission coefficient (γ value) of diamond materials is similar irrespective of the microstructure (MCD, NCD, and UNCD) and geometry of the materials (DNSs and diamond films). The diamond materials show markedly larger γ-coefficient than conventional metallic cathode materials such as Mo that resulted in markedly better PI behavior for the corresponding microplasma devices. Moreover, the PI behavior, i.e. the voltage dependence of plasma current density (J pl-V), plasma density (n e-V), and the robustness of the devices, varied markedly with the microstructure and geometry of the cathode materials that was closely correlated to the electron field emission (EFE) properties of the cathode materials. The UNCD nanopillars, possessing good EFE properties, resulted in superior PI behavior, whereas the MCD diamond films with insufficient EFE properties led to inferior PI behavior. Consequently, enhancement of plasma characteristics is the collective effects of EFE behavior and secondary electron emission characteristics of diamond-based cathode materials.

Compositional analysis of ultrananocrystalline diamond (UNCD) films using ion beam scattering

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Kayani, A.; Sumant, A. V.; Mancini, D. C.

2009-11-01

Determination of the elemental composition is important to correlate the electrical and the optical properties of ultrananocrystalline diamond (UNCD) films, doped with and without nitrogen. To obtain the complete picture of impurities in the UNCD thin films, Rutherford backscattering spectroscopy (RBS), Non-Rutherford backscattering spectroscopy (NRBS), Elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were performed on UNCD films on Si substrate and on free standing films. Helium beam was used for RBS and ERDA and protons were used for NRBS measurements. Exploiting the nuclear reaction of deuterons with C, O and N, 1.1 MeV D+ beam was used to quantitatively measure the concentration of these elements. Our results show that UNCD films contain less than 3% of Hydrogen while Nitrogen content incorporated in the film was estimated to be lower than 1%. The intermixing region between the substrate and the film was found to be negligible.

A Solar-Blind UV Detector Based on Graphene-Microcrystalline Diamond Heterojunctions.

PubMed

Wei, Minsong; Yao, Kaiyuan; Liu, Yumeng; Yang, Chen; Zang, Xining; Lin, Liwei

2017-09-01

An ultraviolet detector is demonstrated through a whole-wafer, thin diamond film transfer process to realize the heterojunction between graphene and microcrystalline diamond (MCD). Conventional direct transfer processes fail to deposit graphene onto the top surface of the MCD film. However, it is found that the 2 µm thick MCD diamond film can be easily peeled off from the growth silicon substrate to expose its smooth backside for the graphene transfer process for high-quality graphene/MCD heterojunctions. A vertical graphene/MCD/metal structure is constructed as the photodiode device using graphene as the transparent top electrode for solar-blind ultraviolet sensing with high responsivity and gain factor. As such, this material system and device architecture could serve as the platform for next-generation optoelectronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

NASA Astrophysics Data System (ADS)

Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

2017-09-01

In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

Lubrication by Diamond and Diamondlike Carbon Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1997-01-01

Regardless of environment (ultrahigh vacuum, humid air, dry nitrogen, or water), ion-beam-deposited diamondlike carbon (DLC) and nitrogen-ion-implanted, chemical-vapor-deposited (CVD) diamond films had low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6)cu mm/N(dot)m). These films can be used as effective wear-resistant, self-lubricating coatings regardless of environment. On the other hand, as-deposited, fine-grain CVD diamond films; polished, coarse-grain CVD diamond films; and polished and then fluorinated, coarse-grain CVD diamond films can be used as effective wear-resistant, self-lubricating coatings in humid air, in dry nitrogen, and in water, but they had a high coefficient of friction and a high wear rate in ultrahigh vacuum. The polished, coarse-grain CVD diamond film revealed an extremely low wear rate, far less than 10(exp 10) cu mm/N(dot)m, in water.

Improving the long-term stability of Ti6Al4V abutment screw by coating micro/nano-crystalline diamond films.

PubMed

Xie, Youneng; Zhou, Jing; Wei, Qiuping; Yu, Z M; Luo, Hao; Zhou, Bo; Tang, Z G

2016-10-01

Abutment screw loosening is the most common complication of implanting teeth. Aimed at improving the long-term stability of them, well-adherent and homogeneous micro-crystalline diamond (MCD) and nano-crystalline diamond (NCD) were deposited on DIO(®) (Dong Seo, Korea) abutment screws using a hot filament chemical vapor deposition (HFCVD) system. Compared with bare DIO(®) screws, diamond coated ones showed higher post reverse toque values than the bare ones (p<0.05) after cyclic loading one million times under 100N, and no obvious flaking happened after loading test. Diamond coated disks showed lower friction coefficients of 0.15 and 0.18 in artificial saliva when countered with ZrO2 than that of bare Ti6Al4V disks of 0.40. Though higher cell apoptosis rate was observed on film coated disks, but no significant difference between MCD group and NCD group. And the cytotoxicity of diamond films was acceptable for the fact that the cell viability of them was still higher than 70% after cultured for 72h. It can be inferred that coating diamond films might be a promising modification method for Ti6Al4V abutment screws. Copyright © 2016 Elsevier Ltd. All rights reserved.

Reproducibility of CVD diamond detectors for radiotherapy dosimetry

NASA Astrophysics Data System (ADS)

Betzel, G. T.; Lansley, S. P.; McKay, D.; Meyer, J.

2012-11-01

Three in-house X-ray detectors based on diamond chemical vapor deposition (CVD) from the same manufactured batch of single crystal films were investigated for their reproducibility. Leakage current, priming dose, response dynamics, dose linearity, dependence on dose rate and angular dependence were used to evaluate differences between detectors. Slight differences were seen in leakage currents before (<1.5 pA) and after (<12 pA) irradiation. A priming dose of ˜7 Gy and rise and fall times of 2 s were found for all three detectors. Sensitivities differed by up to 10%. Dependence on dose rate were similar (∆=0.92-0.94). Angular dependence was minimal (97-102% avg.). Differences in detector performance appeared to be primarily due to film thickness, which can significantly change sensitivities (nC Gy-1) and applied fields (V μm-1) for detectors with small sensitive volumes. Results suggest that preselection of CVD diamond films according to thickness in addition to material quality would be required to avoid individual calibration, which is performed for commercially available natural diamond detectors.

Quantitative analysis of trace element concentrations in some gem-quality diamonds

NASA Astrophysics Data System (ADS)

McNeill, J.; Pearson, D. G.; Klein-Ben David, O.; Nowell, G. M.; Ottley, C. J.; Chinn, I.

2009-09-01

The geochemical signature of diamond-forming fluids can be used to unravel diamond-forming processes and is of potential use in the detection of so-called 'conflict' diamonds. While fluid-rich fibrous diamonds can be analyzed by a variety of techniques, very few data have been published for fluid-poor, gem-quality diamonds because of their very low impurity levels. Here we present a new ICPMS-based (ICPMS: inductively coupled plasma mass spectrometry) method for the analysis of trace element concentrations within fluid-poor, gem-quality diamonds. The method employs a closed-system laser ablation cell. Diamonds are ablated and the products trapped for later pre-concentration into solutions that are analyzed by sector-field ICPMS. We show that our limits of quantification for a wide range of elements are at the sub-pg to low pg level. The method is applied to a suite of 10 diamonds from the Cullinan Mine (previously known as Premier), South Africa, along with other diamonds from Siberia (Mir and Udachnaya) and Venezuela. The concentrations of a wide range of elements for all the samples (expressed by weight in the solid) are very low, with rare earth elements along with Y, Nb, Cs ranging from 0.01 to 2 ppb. Large ion lithophile elements (LILE) such as Rb and Ba vary from 1 to 30 ppb. Ti ranges from ppb levels up to 2 ppm. From the combined, currently small data set we observe two kinds of diamond-forming fluids within gem diamonds. One group has enrichments in LILE over Nb, whereas a second group has normalized LILE abundances more similar to those of Nb. These two groups bear some similarity to different groups of fluid-rich diamonds, providing some supporting evidence of a link between the parental fluids for both fluid-inclusion-rich and gem diamonds.

All diamond self-aligned thin film transistor

DOEpatents

Gerbi, Jennifer [Champaign, IL

2008-07-01

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

Nucleation Behavior of Oxygen-Acetylene Torch-Produced Diamond Films

NASA Technical Reports Server (NTRS)

Roberts, F. E.

2003-01-01

A mechanism is presented for the nucleation of diamond in the combustion flame environment. A series of six experiments and two associated simulations provide results from which the mechanism was derived. A substantial portion of the prior literature was reviewed and the data and conclusions from the previous experimenters were found to support the proposed mechanism. The nucleation mechanism builds on the work of previous researchers but presents an approach to nucleation in a detail and direction not fully presented heretofore. This work identifies the gas phase as the controlling environment for the initial formation steps leading to nucleation. The developed mechanism explains some of the difficulty which has been found in producing single crystal epitaxial films. An experiment which modified the initial gas phase precursor using methane and carbon monoxide is presented. Addition of methane into the precursor gases was found to be responsible for pillaring of the films. Atomic force microscopy surface roughness data provides a reasonable look at suppression of nucleation by carbon monoxide. Surface finish data was taken on crystals which were open to the nucleation environment and generally parallel to the substrate surface. The test surfaces were measured as an independent measure of the instantaneous nucleation environent. A gas flow and substrate experiment changed the conditions on the surface of the sample by increasing the gas flow rate while remaining on a consistent point of the atomic constituent diagram, and by changing the carbide potential of the substrate. Two tip modification experiments looked at the behavior of gas phase nucleation by modifying the shape and behavior of the flame plasma in which the diamond nucleation is suspected to occur. Diamond nucleation and growth was additionally examined using a high-velocity oxygen fuel gun and C3H6 as the fuel gas phase precursor with addition of carbon monoxide gas 01 addition of liquid toluene.

Fabrication of nitrogen-containing diamond-like carbon film by filtered arc deposition as conductive hard-coating film

NASA Astrophysics Data System (ADS)

Iijima, Yushi; Harigai, Toru; Isono, Ryo; Imai, Takahiro; Suda, Yoshiyuki; Takikawa, Hirofumi; Kamiya, Masao; Taki, Makoto; Hasegawa, Yushi; Tsuji, Nobuhiro; Kaneko, Satoru; Kunitsugu, Shinsuke; Habuchi, Hitoe; Kiyohara, Shuji; Ito, Mikio; Yick, Sam; Bendavid, Avi; Martin, Phil

2018-01-01

Diamond-like carbon (DLC) films, which are amorphous carbon films, have been used as hard-coating films for protecting the surface of mechanical parts. Nitrogen-containing DLC (N-DLC) films are expected as conductive hard-coating materials. N-DLC films are expected in applications such as protective films for contact pins, which are used in the electrical check process of integrated circuit chips. In this study, N-DLC films are prepared using the T-shaped filtered arc deposition (T-FAD) method, and film properties are investigated. Film hardness and film density decreased when the N content increased in the films because the number of graphite structures in the DLC film increased as the N content increased. These trends are similar to the results of a previous study. The electrical resistivity of N-DLC films changed from 0.26 to 8.8 Ω cm with a change in the nanoindentation hardness from 17 to 27 GPa. The N-DLC films fabricated by the T-FAD method showed high mechanical hardness and low electrical resistivity.

Controlling Directional Liquid Motion on Micro- and Nanocrystalline Diamond/β-SiC Composite Gradient Films.

PubMed

Wang, Tao; Handschuh-Wang, Stephan; Huang, Lei; Zhang, Lei; Jiang, Xin; Kong, Tiantian; Zhang, Wenjun; Lee, Chun-Sing; Zhou, Xuechang; Tang, Yongbing

2018-01-30

In this Article, we report the synthesis of micro- and nanocrystalline diamond/β-SiC composite gradient films, using a hot filament chemical vapor deposition (HFCVD) technique and its application as a robust and chemically inert means to actuate water and hazardous liquids. As revealed by scanning electron microscopy, the composition of the surface changed gradually from pure nanocrystalline diamond (hydrophobic) to a nanocrystalline β-SiC surface (hydrophilic). Transmission electron microscopy and Raman spectroscopy were employed to determine the presence of diamond, graphite, and β-SiC phases. The as-prepared gradient films were evaluated for their ability to actuate water. Indeed, water was transported via the gradient from the hydrophobic (hydrogen-terminated diamond) to the hydrophilic side (hydroxyl-terminated β-SiC) of the gradient surface. The driving distance and velocity of water is pivotally influenced by the surface roughness. The nanogradient surface showed significant promise as the lower roughness combined with the longer gradient yields in transport distances of up to 3.7 mm, with a maximum droplet velocity of nearly 250 mm/s measured by a high-speed camera. As diamond and β-SiC are chemically inert, the gradient surfaces can be used to drive hazardous liquids and reactive mixtures, which was signified by the actuation of hydrochloric acid and sodium hydroxide solution. We envision that the diamond/β-SiC gradient surface has high potential as an actuator for water transport in microfluidic devices, DNA sensors, and implants, which induce guided cell growth.

Biomineralized diamond-like carbon films with incorporated titanium dioxide nanoparticles improved bioactivity properties and reduced biofilm formation.

PubMed

Lopes, F S; Oliveira, J R; Milani, J; Oliveira, L D; Machado, J P B; Trava-Airoldi, V J; Lobo, A O; Marciano, F R

2017-12-01

Recently, the development of coatings to protect biomedical alloys from oxidation, passivation and to reduce the ability for a bacterial biofilm to form after implantation has emerged. Diamond-like carbon films are commonly used for implanted medical due to their physical and chemical characteristics, showing good interactions with the biological environment. However, these properties can be significantly improved when titanium dioxide nanoparticles are included, especially to enhance the bactericidal properties of the films. So far, the deposition of hydroxyapatite on the film surface has been studied in order to improve biocompatibility and bioactive behavior. Herein, we developed a new route to obtain a homogeneous and crystalline apatite coating on diamond-like carbon films grown on 304 biomedical stainless steel and evaluated its antibacterial effect. For this purpose, films containing two different concentrations of titanium dioxide (0.1 and 0.3g/L) were obtained by chemical vapor deposition. To obtain the apatite layer, the samples were soaked in simulated body fluid solution for up to 21days. The antibacterial activity of the films was evaluated by bacterial eradication tests using Staphylococcus aureus biofilm. Scanning electron microscopy, X-ray diffraction, Raman scattering spectroscopy, and goniometry showed that homogeneous, crystalline, and hydrophilic apatite films were formed independently of the titanium dioxide concentration. Interestingly, the diamond-like films containing titanium dioxide and hydroxyapatite reduced the biofilm formation compared to controls. A synergism between hydroxyapatite and titanium dioxide that provided an antimicrobial effect against opportunistic pathogens was clearly observed. Copyright © 2017 Elsevier B.V. All rights reserved.

Synchrotron X-ray Microdiffraction Analysis of Proton Irradiated Polycrystalline Diamond Films

NASA Technical Reports Server (NTRS)

Newton, R. I.; Davidson, J. L.; Ice, G. E.; Liu, W.

2004-01-01

X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with sub-micron spatial resolution. These capabilities make this technique promising for understanding the mechanical properties of MicroElectroMechanical Systems (MEMS). This investigation examined the local strain induced by irradiating a polycrystalline diamond thin film with a dose of 2x10(exp 17) H(+)per square centimeter protons. Preliminary results indicate that a measurable strain, on the order of 10(exp -3), was introduced into the film near the End of Range (EOR) region of the protons.

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

NASA Astrophysics Data System (ADS)

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla; Kuball, Martin

2015-06-01

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

NASA Astrophysics Data System (ADS)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

Temperature dependence of W metallic coatings synthesized by double glow plasma surface alloying technology on CVD diamond films

NASA Astrophysics Data System (ADS)

Gao, Jie; Hei, Hongjun; Shen, Yanyan; Liu, Xiaoping; Tang, Bin; He, Zhiyong; Yu, Shengwang

2015-11-01

W metallic coatings were synthesized on free-standing chemical vapor deposition (CVD) diamond films using double glow plasma surface alloying (DGPSA) technology. The influence of varying metalizing temperatures on the microstructures, phase composition and adhesion of the W metallic coatings were investigated. Likewise, the effectiveness of the W metallic coatings was preliminary evaluated via examining the shear strength of the brazing joints between W-metalized diamond films and commercial cemented carbide (WC-Co) inserts. The results showed that continuous and compact W metallic coatings were formed on the diamond films in the temperature range of 750-800 °C, while cracks or cavities presented at the W/diamond interface at 700 °C, 850 °C and 900 °C. Inter-diffusion of W and C atoms preformed, and WC and W2C were formed at the W/diamond interfaces at all temperatures except 700 °C, at which only W2C was formed. Moreover, etched cavities appeared at the W/diamond interface when the temperature exceeded 850 °C. The critical loads for coating delamination, as measured with the scratch test, increased as the temperature rose from 700 °C to 800 °C, while decreased with further increasing temperature. The maximum load was obtained at 800 °C with a value of 17.1 N. Besides, the shear strength of the brazing joints depicted the similar trend with the critical load. The highest shear strength (249 MPa) was also obtained at 800 °C.

Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Liu, Cui; Li, Guo-Qing; Gou, Wei; Mu, Zong-Xin; Zhang, Cheng-Wu

2004-11-01

Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5 μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

Diamond Synthesis Employing Nanoparticle Seeds

NASA Technical Reports Server (NTRS)

Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

2014-01-01

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramaniam, Y.; Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be; Janssens, S. D.

2016-08-08

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates formore » future use in high-power electronic applications.« less

Structure of thin diamond films: A 1H and 13C nuclear-magnetic-resonance study

NASA Astrophysics Data System (ADS)

Pruski, M.; Lang, D. P.; Hwang, Son-Jong; Jia, H.; Shinar, J.

1994-04-01

The 1H and 13C nuclear magnetic resonance (NMR) of thin diamond films deposited from naturally abundant (1.1 at. %) as well as 50% and 100% 13enriched CH4 heavily diluted in H2 is described and discussed. Less than 0.6 at. % of hydrogen is found in the films which contain crystallites up to ~15 μm across. The 1H NMR consists of a broad 50-65-kHz-wide Gaussian line attributed to H atoms bonded to carbon and covering the crystallite surfaces. A narrow Lorentzian line was only occasionally observed and is found not to be intrinsic to the diamond structure. The 13C NMR demonstrates that >99.5% of the C atoms reside in a quaternary diamondlike configuration. 1-13C cross-polarization measurement indicates that, at the very least, the majority of 13C nuclei cross polarized by 1H, i.e., within three bond distances from a 1H at a crystallite surface, reside in sp3 diamondlike coordinated sites. The 13C relaxation rates of the films are four orders of magnitude faster than that of natural diamond and believed to be due to 13C spin diffusion to paramagnetic centers, presumably carbon dangling bonds. Analysis of the measured relaxation rates indicates that within the 13C spin-diffusion length of √DTc1 ~0.05 μm, these centers are uniformly distributed in the diamond crystallites. The possibility that the dangling bonds are located at internal nanovoid surfaces is discussed.

Ultra-Smooth Nanostructured Diamond Films Deposited from He/H2/CH4/N2 Microwave Plasmas

PubMed Central

Konovalov, Valery V.; Melo, Andrew; Catledge, Shane A.; Chowdhury, Shafiul

2008-01-01

Addition of He to a high CH4 content (10.7 vol%) H2/CH4/N2 feedgas mixture for microwave plasma chemical vapor deposition produced hard (56–72 GPa), ultra-smooth nanostructured diamond films on Ti-6Al-4V alloy substrates. Upon increase in He content up to 71 vol%, root mean squared (RMS) surface roughness of the film decreased to 9–10 nm and average diamond grain size to 5–6 nm. Our studies show that increased nanocrystallinity with He addition in plasma is related to plasma dilution, enhanced fragmentation of carbon containing species, and enhanced formation of CN radical. PMID:16573106

Origin of a needle-like granular structure for ultrananocrystalline diamond films grown in a N2/CH4 plasma

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Kurian, J.; Chen, H. C.; Dong, C. L.; Y Lee, C.; Tai, N. H.; Lin, I. N.

2012-09-01

Microstructural evolution as a function of substrate temperature (TS) for conducting ultrananocrystalline diamond (UNCD) films is systematically studied. Variation of the sp2 graphitic and sp3 diamond content with TS in the films is analysed from the Raman and near-edge x-ray absorption fine structure spectra. Morphological and microstructural studies confirm that at TS = 700 °C well-defined acicular structures evolve. These nanowire structures comprise sp3 phased diamond, encased in a sheath of sp2 bonded graphitic phase. TS causes a change in morphology and thereby the various properties of the films. For TS = 800 °C the acicular grain growth ceases, while that for TS = 700 °C ceases only upon termination of the deposition process. The grain-growth process for the unique needle-like granular structure is proposed such that the CN species invariably occupy the tip of the nanowire, promoting an anisotropic grain-growth process and the formation of acicular structure of the grains. The electron field emission studies substantiate that the films grown at TS = 700 °C are the most conducting, with conduction mediated through the graphitic phase present in the films.

Conversion of fullerenes to diamonds

DOEpatents

Gruen, Dieter M.

1995-01-01

A method of forming synthetic diamond or diamond-like films on a substrate surface. The method involves the steps of providing a vapor selected from the group of fullerene molecules or an inert gas/fullerene molecule mixture, providing energy to the fullerene molecules consisting of carbon-carbon bonds, the energized fullerene molecules breaking down to form fragments of fullerene molecules including C.sub.2 molecules and depositing the energized fullerene molecules with C.sub.2 fragments onto the substrate with farther fragmentation occurring and forming a thickness of diamond or diamond-like films on the substrate surface.

Electrical Conductivity Of Diamond Up To 1,200 Degrees C

NASA Technical Reports Server (NTRS)

Vandersande, Jan W.; Zoltan, Leslie D.

1993-01-01

Report discusses measurements of electrical conductivities of two synthetic diamond films, three synthetic diamondlike films, and two natural type IIa diamonds at temperatures from ambient to 1,200 degrees C. Measurements performed to compare electrical conductivities of state-of-the-art diamond films with those of natural insulating diamond, particularly at temperatures above 700 degrees C.

Pressure effects on the dissipative behavior of nanocrystalline diamond microelectromechanical resonators

NASA Astrophysics Data System (ADS)

Santos, J. T.; Holz, T.; Fernandes, A. J. S.; Costa, F. M.; Chu, V.; Conde, J. P.

2015-02-01

Diamond-based microelectromechanical resonators have the potential of enhanced performance due to the chemical inertness of the diamond structural layer and its high Young’s modulus, high wear resistance, low thermal expansion coefficient, and very high thermal conductivity. In this work, the resonance frequency and quality factor of MEMS resonators based on nanocrystalline diamond films are characterized under different air pressures. The dynamic behavior of 50-300 μm long linear bridges and double ended tuning forks, with resonance frequencies between 0.5 and 15 MHz and quality factors as high as 50 000 are described as a function of measurement pressure from high vacuum(~10 mTorr) up to atmospheric conditions. The resonance frequencies and quality factors in vacuum show good agreement with the theoretical models including anchor and thermoelastic dissipation (TED). The Young’s moduli for nanocrystalline diamond films extrapolated from experimental data are between 840-920 GPa. The critical pressure values, at which the quality factor starts decreasing due to dissipation in air, are dependent on the resonator length. Longer structures, with quality factors limited by TED and lower resonance frequencies, have low critical pressures, of the order of 1-10 Torr and go from an intrinsic dissipation, to a molecular dissipation regime and finally to a region of viscous dissipation. Shorter resonators, with higher resonance frequencies and quality factors limited by anchor losses, have higher critical pressures, some higher than atmospheric pressure, and enter directly into the viscous dissipation regime from the intrinsic region.

Transient current induced in thin film diamonds by swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5 + and 45 MeV Si 7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended.more » Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.« less

Transient current induced in thin film diamonds by swift heavy ions

DOE PAGES

Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; ...

2017-04-05

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5 + and 45 MeV Si 7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended.more » Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.« less

An all-diamond X-ray position and flux monitor using nitrogen-incorporated ultra-nanocrystalline diamond contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Mengnan; Gaowei, Mengjia; Zhou, Tianyi

Diamond X-ray detectors with conducting nitrogen-incorporated ultra-nanocrystalline diamond (N-UNCD) films as electrodes were fabricated to measure X-ray beam flux and position. Structural characterization and functionality tests were performed for these devices. The N-UNCD films grown on unseeded diamond substrates were compared with N-UNCD films grown on a seeded silicon substrate. The feasibility of the N-UNCD films acting as electrodes for X-ray detectors was confirmed by the stable performance in a monochromatic X-ray beam. The fabrication process is able to change the surface status which may influence the signal uniformity under low bias, but this effect can be neglected under fullmore » collection bias.« less

Nanocrystalline diamond coatings for mechanical seals applications.

PubMed

Santos, J A; Neto, V F; Ruch, D; Grácio, J

2012-08-01

A mechanical seal is a type of seal used in rotating equipment, such as pumps and compressors. It consists of a mechanism that assists the connection of the rotating shaft to the housings of the equipments, preventing leakage or avoiding contamination. A common cause of failure of these devices is end face wear out, thus the use of a hard, smooth and wear resistant coating such as nanocrystalline diamond would be of great importance to improve their working performance and increase their lifetime. In this paper, different diamond coatings were deposited by the HFCVD process, using different deposition conditions. Additionally, the as-grown films were characterized for, quality, morphology and microstructure using scanning electron microscopy (SEM) and Raman spectroscopy. The topography and the roughness of the films were characterized by atomic force microscopy (AFM).

2-Dimensional micro-network of boron-doped diamond film: fabrication and electrochemical sensing application.

PubMed

Luo, Daibing; Wu, Liangzhuan; Zhi, Jinfang

2010-09-21

By means of delicate and conventional methods based on photolithography and hot filament chemical vapor deposition (HFCVD) technology, a novel boron-doped diamond micro-network (BDDMN) film was fabricated, and this micro-structure showed excellent electrochemical sensing properties.

Direct observation and mechanism of increased emission sites in Fe-coated microcrystalline diamond films

NASA Astrophysics Data System (ADS)

Panda, Kalpataru; Sundaravel, B.; Panigrahi, B. K.; Huang, Pin-Chang; Shih, Wen-Ching; Chen, Huang-Chin; Lin, I.-Nan

2012-06-01

The electron field emission (EFE) properties of microcrystalline diamond (MCD) films are significantly enhanced due to the Fe coating and post-annealing processes. The 900 °C post-annealed Fe coated diamond films exhibit the best EFE properties, with a turn on field (E0) of 3.42 V/μm and attain EFE current density (Je) of 170 μA/cm2 at 7.5 V/μm. Scanning tunnelling spectroscopy (STS) in current imaging tunnelling spectroscopy mode clearly shows the increased number density of emission sites in Fe-coated and post-annealed MCD films than the as-prepared ones. Emission is seen from the boundaries of the Fe (or Fe3C) nanoparticles formed during the annealing process. In STS measurement, the normalized conductance dI /dV/I/V versus V curves indicate nearly metallic band gap, at the boundaries of Fe (or Fe3C) nanoparticles. Microstructural analysis indicates that the mechanism for improved EFE properties is due to the formation of nanographite that surrounds the Fe (or Fe3C) nanoparticles.

Ultrananocrystalline diamond contacts for electronic devices

DOEpatents

Sumant, Anirudha V.; Smedley, John; Muller, Erik

2016-11-01

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

Ultrananocrystalline diamond contacts for electronic devices

DOEpatents

Sumant, Anirudha V.; Smedley, John; Muller, Erik

2017-12-12

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition

PubMed Central

2012-01-01

Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)3) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios. PMID:22873631

Depth profiling of nitrogen within 15N-incorporated nano-crystalline diamond thin films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Cassidy, D. P.; Dissanayake, A.; Mancini, D. C.; Ghantasala, M. K.; Kayani, A.

2013-09-01

Nano-Crystalline Diamond (NCD) thin films are a topic of recent interest due to their excellent mechanical and electrical properties. The inclusion of nitrogen is a specific interest as its presence within NCD modifies its conductive properties. The methodology adopted for the characterization of nitrogen incorporated NCD films grown on a chromium underlayer determined a correlation between the chromium and nitrogen concentrations as well as a variation in the concentration profile of elements. Additionally, the concentration of nitrogen was found to be more than three times greater for these films versus those grown on a silicon substrate.

Laser-induced multi-energy processing in diamond growth

NASA Astrophysics Data System (ADS)

Xie, Zhiqiang

Laser-induced multi-energy processing (MEP) introduces resonant vibrational excitations of precursor molecules to conventional chemical vapor deposition methods for material synthesis. In this study, efforts were extended to explore the capability of resonant vibrational excitations for promotion of energy efficiency in chemical reactions, for enhancement of diamond deposition, and for control of chemical reactions. The research project mainly focused on resonant vibrational excitations of precursor molecules using lasers in combustion flame deposition of diamond, which led to: 1) promotion of chemical reactions; 2) enhancement of diamond growth with higher growth rate and better crystallizations; 3) steering of chemical reactions which lead to preferential growth of {100}-oriented diamond films and crystals; and 4) mode-selective excitations of precursor molecules toward bond-selective control of chemical reactions. Diamond films and crystals were deposited in open air by combustion flame deposition through resonant vibrational excitations of precursor molecules, including ethylene (C2H4) and propylene (C3H 6). A kilowatt wavelength-tunable CO2 laser with spectral range from 9.2 to 10.9 microm was tuned to match vibrational modes of the precursor molecules. Resonant vibrational excitations of these molecules were achieved with high energy efficiency as compared with excitations using a common CO2 laser (fixed wavelength at 10.591microm). With resonant vibrational excitations, the diamond growth rate was increased; diamond quality was promoted; diamond crystals with lengths up to 5 mm were deposited in open air; preferential growth of {100}-oriented diamond films and single crystals was achieved; mode-selective excitations of precursor molecules were investigated toward control of chemical reactions. Optical emission spectroscopy (OES), mass spectrometry (MS), and molecular dynamic simulations were conducted to obtain an in-depth understanding of the resonant

Detailed Study of BSA Adsorption on Micro- and Nanocrystalline Diamond/β-SiC Composite Gradient Films by Time-Resolved Fluorescence Microscopy.

PubMed

Handschuh-Wang, Stephan; Wang, Tao; Druzhinin, Sergey I; Wesner, Daniel; Jiang, Xin; Schönherr, Holger

2017-01-24

The adsorption of bovine serum albumin (BSA) on micro- and nanocrystalline diamond/β-SiC composite films synthesized using the hot filament chemical vapor deposition (HFCVD) technique has been investigated by confocal fluorescence lifetime imaging microscopy. BSA labeled with fluorescein isothiocyanate (FITC) was employed as a probe. The BSA FITC conjugate was found to preferentially adsorb on both O-/OH-terminated microcrystalline and nanocrystalline diamond compared to the OH-terminated β-SiC, resulting in an increasing amount of BSA adsorbed to the gradient surfaces with an increasing diamond/β-SiC ratio. The different strength of adsorption (>30 times for diamond with a grain size of 570 nm) coincides with different surface energy parameters and differing conformational changes upon adsorption. Fluorescence data of the adsorbed BSA FITC on the gradient film with different diamond coverage show a four-exponential decay with decay times of 3.71, 2.54, 0.66, and 0.13 ns for a grain size of 570 nm. The different decay times are attributed to the fluorescence of thiourea fluorescein residuals of linked FITC distributed in BSA with different dye-dye and dye-surface distances. The longest decay time was found to correlate linearly with the diamond grain size. The fluorescence of BSA FITC undergoes external dynamic fluorescence quenching on the diamond surface by H- and/or sp 2 -defects and/or by amorphous carbon or graphite phases. An acceleration of the internal fluorescence concentration quenching in BSA FITC because of structural changes of albumin due to adsorption, is concluded to be a secondary contributor. These results suggest that the micro- and nanocrystalline diamond/β-SiC composite gradient films can be utilized to spatially control protein adsorption and diamond crystallite size, which facilitates systematic studies at these interesting (bio)interfaces.

Diamond deposition in a hot-filament reactor using different hydrocarbon precursor gases

NASA Astrophysics Data System (ADS)

May, P. W.; Everitt, N. M.; Trevor, C. G.; Ashfold, M. N. R.; Rosser, K. N.

1993-07-01

A hot-filament reactor was used to deposit polycrystalline diamond films upon single-crystal Si substrates using hydrocarbon/H 2 gas mixtures. We studied the effect upon the deposition process and resulting film properties by varying the hydrocarbon gas from C 1H x to C 4H x alkanes. This was done maintaining a constant carbon-to-hydrogen ratio, but using a substantially lower-than- normal filament temperature (1500°C) in order to highlight differences in activation barriers and in the chemistry of the diamond-forming step. It was found that with increasing hydrocarbon chain length the deposition rate decreased, from a value of about 0.4 μm h -1 for methane/H 2 mixtures to less than 0.07 μm h -1 for butane/H 2. This was accompanied by an increase in the relative proportion of amorphous carbon to diamond present in the films. After one hour deposition the diamond grain size remained constant at about 20 nm, irrespective of the precursor gas. The measured Knoop hardness of the films also decreased when using process gases other than methane. We also studied the effect of changing the bond order in C 2H x precursor gases (ethane, ethene, ethyne) but found that this had no effect on either the deposition rate or the film quality.

Progress in the characterization of diamond thin films prepared by a laser plasma discharge

NASA Astrophysics Data System (ADS)

Davanloo, F.; Juengerman, E. M.; Jander, D. R.; Lee, T. J.; Collins, C. B.

Progress in the characterization of diamond thin films produced by a unique laser plasma discharge source at practical growth rates of 0.7 micron/hr is reported. Optical properties, mass densities, and electrical resistivities of deposited films are given and their relationship to the power density of the laser at the graphite target is discussed. Examination of films with scanning tunneling microscopy show the clear prevalence of the structure recently predicted by Angus et al. (1990) in which sp3 clusters are bonded together with the carbon polytypes.

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Remes, Zdenek; Sun, Shih-Jye; Varga, Marian; Chou, Hsiung; Hsu, Hua-Shu; Kromka, Alexander; Horak, Pavel

2015-11-01

The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure.

Diamond MEMS: wafer scale processing, devices, and technology insertion

NASA Astrophysics Data System (ADS)

Carlisle, J. A.

2009-05-01

Diamond has long held the promise of revolutionary new devices: impervious chemical barriers, smooth and reliable microscopic machines, and tough mechanical tools. Yet it's been an outsider. Laboratories have been effectively growing diamond crystals for at least 25 years, but the jump to market viability has always been blocked by the expense of diamond production and inability to integrate with other materials. Advances in chemical vapor deposition (CVD) processes have given rise to a hierarchy of carbon films ranging from diamond-like carbon (DLC) to vapor-deposited diamond coatings, however. All have pros and cons based on structure and cost, but they all share some of diamond's heralded attributes. The best performer, in theory, is the purest form of diamond film possible, one absent of graphitic phases. Such a material would capture the extreme hardness, high Young's modulus and chemical inertness of natural diamond. Advanced Diamond Technologies Inc., Romeoville, Ill., is the first company to develop a distinct chemical process to create a marketable phase-pure diamond film. The material, called UNCD® (for ultrananocrystalline diamond), features grain sizes from 3 to 300 nm in size, and layers just 1 to 2 microns thick. With significant advantages over other thin films, UNCD is designed to be inexpensive enough for use in atomic force microscopy (AFM) probes, microelectromechanical machines (MEMS), cell phone circuitry, radio frequency devices, and even biosensors.

Microwave plasma induced surface modification of diamond-like carbon films

NASA Astrophysics Data System (ADS)

Rao Polaki, Shyamala; Kumar, Niranjan; Gopala Krishna, Nanda; Madapu, Kishore; Kamruddin, Mohamed; Dash, Sitaram; Tyagi, Ashok Kumar

2017-12-01

Tailoring the surface of diamond-like carbon (DLC) film is technically relevant for altering the physical and chemical properties, desirable for useful applications. A physically smooth and sp3 dominated DLC film with tetrahedral coordination was prepared by plasma-enhanced chemical vapor deposition technique. The surface of the DLC film was exposed to hydrogen, oxygen and nitrogen plasma for physical and chemical modifications. The surface modification was based on the concept of adsorption-desorption of plasma species and surface entities of films. Energetic chemical species of microwave plasma are adsorbed, leading to desorbtion of the surface carbon atoms due to energy and momentum exchange. The interaction of such reactive species with DLC films enhanced the roughness, surface defects and dangling bonds of carbon atoms. Adsorbed hydrogen, oxygen and nitrogen formed a covalent network while saturating the dangling carbon bonds around the tetrahedral sp3 valency. The modified surface chemical affinity depends upon the charge carriers and electron covalency of the adsorbed atoms. The contact angle of chemically reconstructed surface increases when a water droplet interacts either through hydrogen or van dear Waals bonding. These weak interactions influenced the wetting property of the DLC surface to a great extent.

Diamond growth on copper rods from polymer composite nanofibres

NASA Astrophysics Data System (ADS)

Varga, M.; Potocky, S.; Tesarek, P.; Babchenko, O.; Davydova, M.; Kromka, A.

2014-09-01

The potential uses of diamond films can be found in a diverse range of industrial applications. However, deposition of diamond films onto some foreign materials is still not a simple task. Here we present the growth of adherent diamond films on copper rods with the focus on substrate pre-treatment by polyvinyl alcohol composite nanofibres. The primary role of the polymer fibres substantially act as a carbon source which enhances the diamond nucleation and accelerates a homogenous CVD growth. Diamond growth was carried out in pulsed linear antenna microwave chemical vapour deposition system, which is characterized by cold plasma due to larger distance of hot plasma region from the substrate, at various gas compositions. The large distance between plasma source and the substrate holder also allows the uniform deposition of diamond on a large number of substrates with complex geometry (3D objects) as well as for the vertically positioned substrates. Moreover, the inhomogeneity in diamond film thickness deposited on vertically positioned substrates was suppressed by using polyvinyl alcohol nanofibre textile. Combination of PVA polymer fibres use together with this unique deposition system leads to a successful overcoating of the copper rods by continuous diamond film without the film cracking or delamination. We propose that the sequence of plasma-chemical reactions enhances the transformation of certain number of carbon atoms into the sp3-bonded form which further are stabilized by atomic hydrogen coming from plasma.

Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

NASA Astrophysics Data System (ADS)

Wang, Yijia; Li, Jiaxin; Hu, Naixiu; Jiang, Yunlu; Wei, Qiuping; Yu, Zhiming; Long, Hangyu; Zhu, Hekang; Xie, Youneng; Ma, Li; Lin, Cheng-Te; Su, Weitao

2018-03-01

In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called ‘the magnetic and electric coupling fields’, enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V -1 μm-1.

Wear-Resistant, Self-Lubricating Surfaces of Diamond Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1995-01-01

In humid air and dry nitrogen, as-deposited, fine-grain diamond films and polished, coarse-grain diamond films have low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6) mm(exp 3)/N-m). In an ultrahigh vacuum (10(exp -7) Pa), however, they have high steady-state coefficients of friction (greater than 0.6) and high wear rates (greater than or equal to 10(exp -4) mm(exp 3)/N-m). Therefore, the use of as-deposited, fine-grain and polished, coarse-grain diamond films as wear-resistant, self-lubricating coatings must be limited to normal air or gaseous environments such as dry nitrogen. On the other hand, carbon-ion-implanted, fine-grain diamond films and nitrogen-ion-implanted, coarse-grain diamond films have low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6) mm(exp 3)/N-m) in all three environments. These films can be effectively used as wear-resistant, self-lubricating coatings in an ultrahigh vacuum as well as in normal air and dry nitrogen.

Combination process of diamond machining and roll-to-roll UV-replication for thin film micro- and nanostructures

NASA Astrophysics Data System (ADS)

Väyrynen, J.; Mönkkönen, K.; Siitonen, S.

2016-09-01

Roll-to-roll (R2R) ultraviolet (UV) curable embossing replication process is a highly accurate and cost effective way to replicate large quantities of thin film polymer parts. These structures can be used for microfluidics, LED-optics, light guides, displays, cameras, diffusers, decorative, laser sensing and measuring devices. In the R2R UV-process, plastic thin film coated with UV-curable lacquer, passes through an imprinting embossing drum and is then hardened by an UV-lamp. One key element for mastering this process is the ability to manufacture a rotating drum containing micro- and nanostructures. Depending on the pattern shapes, the drum can be directly machined by diamond machining or it can be done through wafer level lithographical process. Due to the shrinkage of UV-curable lacquer, the R2R drum pattern process needs to be prototyped few times, in order to get the desired performance and shape from the R2R produced part. To speed up the prototyping and overall process we have developed a combination process where planar diamond machining patterns are being turned into a drum roller. Initially diamond machined patterns from a planar surface are replicated on a polymer sheet using UV-replication. Secondly, a nickel stamper shim is grown form the polymer sheet and at the end the stamper is turned into a roller and used in the R2R process. This process allows various micro milled, turned, grooved and ruled structures to be made at thin film products through the R2R process. In this paper, the process flow and examples of fabricating R2R embossed UVcurable thin film micro- and nanostructures from planar diamond machined patterns, is reported.

Nitrogen-doped diamond thin films: potential application in Fabry-Pérot interferometer

NASA Astrophysics Data System (ADS)

Kosowska, M.; Majchrowicz, D.; Sankaran, K. J.; Ficek, M.; Jedrzejewska-Szczerska, M.; Haenen, M. K.

2018-04-01

In this paper we present results of preliminary research of using nitrogen-doped diamond (NDD) films as reflective layer in Fabry-Pérot interferometer. NDD films were deposited on Si substrates by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) with the use of CH4, H2 and N2 gas mixtures. During deposition process methane flow rate varied while nitrogen flow was constant. We performed series of measurements which showed that NDD can be used as a mirror in Fabry-Pérot interferometer. The best signal visibility and repeatability of measurements were obtained for sample made with 3 sccm methane flow rate.

Relaxation of the resistive superconducting state in boron-doped diamond films

NASA Astrophysics Data System (ADS)

Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, Th.; Bustarret, E.

2016-02-01

We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5 ×1021cm-3 and a critical temperature of about 2 K . By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T-2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.

Long-lasting hydrophilicity on nanostructured Si-incorporated diamond-like carbon films.

PubMed

Yi, Jin Woo; Moon, Myoung-Woon; Ahmed, Sk Faruque; Kim, Haeri; Cha, Tae-Gon; Kim, Ho-Young; Kim, Seock-Sam; Lee, Kwang-Ryeol

2010-11-16

We investigated the long-lasting hydrophilic behavior of a Si-incorporated diamond-like carbon (Si-DLC) film by varying the Si fraction in DLC matrix through oxygen and nitrogen plasma surface treatments. The wetting behavior of the water droplets on the pure DLC and Si-DLC with the nitrogen or oxygen plasma treatment revealed that the Si element in the oxygen-plasma-treated Si-DLC films played a major role in maintaining a hydrophilic wetting angle of <10° for 20 days in ambient air. The nanostructured patterns with a roughness of ∼10 nm evolved because of the selective etching of the carbon matrix by the oxygen plasma in the Si-DLC film, where the chemical component of the Si-Ox bond was enriched on the top of the nanopatterns and remained for over 20 days.

Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

DOEpatents

Carlisle, John A [Plainfield, IL; Gruen, Dieter M [Downers Grove, IL; Auciello, Orlando [Bolingbrook, IL; Xiao, Xingcheng [Woodridge, IL

2009-07-07

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

Single-crystal diamond nanomechanical resonators with quality factors exceeding one million

NASA Astrophysics Data System (ADS)

Tao, Y.; Boss, J. M.; Moores, B. A.; Degen, C. L.

2014-04-01

Diamond has gained a reputation as a uniquely versatile material, yet one that is intricate to grow and process. Resonating nanostructures made of single-crystal diamond are expected to possess excellent mechanical properties, including high-quality factors and low dissipation. Here we demonstrate batch fabrication and mechanical measurements of single-crystal diamond cantilevers with thickness down to 85 nm, thickness uniformity better than 20 nm and lateral dimensions up to 240 μm. Quality factors exceeding one million are found at room temperature, surpassing those of state-of-the-art single-crystal silicon cantilevers of similar dimensions by roughly an order of magnitude. The corresponding thermal force noise for the best cantilevers is ~5·10-19 N Hz-1/2 at millikelvin temperatures. Single-crystal diamond could thus directly improve existing force and mass sensors by a simple substitution of resonator material. Presented methods are easily adapted for fabrication of nanoelectromechanical systems, optomechanical resonators or nanophotonic devices that may lead to new applications in classical and quantum science.

Improvement of diamond-like carbon electrochemical corrosion resistance by addition of nanocrystalline diamond.

PubMed

Marciano, F R; Almeida, E C; Bonetti, L F; Corat, E J; Trava-Airoldi, V J

2010-02-15

Nanocrystalline diamond (NCD) particles were incorporated into diamond-like carbon (DLC) films in order to investigate NCD-DLC electrochemical corrosion resistance. The films were grown over 304 stainless steel using plasma-enhanced chemical vapor deposition. NCD particles were incorporated into DLC during the deposition process. The investigation of NCD-DLC electrochemical corrosion behavior was performed using potentiodynamic polarization against NaCl. NCD-DLC films presented more negative corrosion potential and lower anodic and cathodic current densities. The electrochemical analysis indicated that NCD-DLC films present superior impedance and polarization resistance compared to the pure DLC, which indicate that they are promising corrosion protective coatings in aggressive solutions. Copyright 2009 Elsevier Inc. All rights reserved.

Diamond heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Bi, B.; Golding, B.

2015-02-24

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

Diamond like carbon coatings: Categorization by atomic number density

NASA Technical Reports Server (NTRS)

Angus, John C.

1986-01-01

Dense diamond-like hydrocarbon films grown at the NASA Lewis Research Center by radio frequency self bias discharge and by direct ion beam deposition were studied. A new method for categorizing hydrocarbons based on their atomic number density and elemental composition was developed and applied to the diamond-like hydrocarbon films. It was shown that the diamond-like hydrocarbon films are an entirely new class of hydrocarbons with atomic number densities lying between those of single crystal diamond and adamantanes. In addition, a major review article on these new materials was completed in cooperation with NASA Lewis Research Center personnel.

Relationship Between Secondary-Electron Yield and Structure of Polycrystalline Diamond Prepared Under Different Methane Concentrations

NASA Astrophysics Data System (ADS)

Wei, Kongting; Wu, Shengli; Wei, Qiang; Zheng, Pu; Hu, Wenbo; Wang, Hongxing

2018-05-01

To understand the mechanism of electron transport and escape to vacuum of polycrystalline chemical-vapor-deposited diamond films prepared under different methane (CH4) concentrations, the secondary electron yield (SEY) δ as a function of primary electron (PE) energy E p has been investigated. The δ-E p curves exhibited different features for films synthesized under different CH4 concentrations, and the highest SEY was obtained when the CH4 concentration was 2%. A physical model was used to compute the key parameters of escape depth λ s and surface factor f 0·A s. The results indicated that λ s is closely related to the crystal quality of the diamond film, with diamond of high quality having larger λ s, while the surface factor f 0·A s is mainly determined by the surface morphology, which is associated with the surface roughness of the film. Using the above model, the SEY as a function of varying λ s and f 0·A s was also calculated; the results suggested that f 0·A s plays a key role in determining SEY for low-energy PEs, especially for energies < 500 eV, while the SEY is affected by both λ s and f 0·A s for high-energy PEs.

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl; Institute for Materials Research; Sankaran, Kamatchi J.

2016-06-13

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that whilemore » the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.« less

Synthesis of ultrasmooth nanostructured diamond films by microwave plasma chemical vapor deposition using a He/H(2)/CH(4)/N(2) gas mixture.

PubMed

Chowdhury, S; Hillman, Damon A; Catledge, Shane A; Konovalov, Valery V; Vohra, Yogesh K

2006-10-01

Ultrasmooth nanostructured diamond (USND) films were synthesized on Ti-6Al-4V medical grade substrates by adding helium in H(2)/CH(4)/N(2) plasma and changing the N(2)/CH(4) gas flow from 0 to 0.6. We were able to deposit diamond films as smooth as 6 nm (root-mean-square), as measured by an atomic force microscopy (AFM) scan area of 2 μm(2). Grain size was 4-5 nm at 71% He in (H(2) + He) and N(2)/CH(4) gas flow ratio of 0.4 without deteriorating the hardness (~50-60 GPa). The characterization of the films was performed with AFM, scanning electron microscopy, x-ray diffraction (XRD), Raman spectroscopy, and nanoindentation techniques. XRD and Raman results showed the nanocrystalline nature of the diamond films. The plasma species during deposition were monitored by optical emission spectroscopy. With increasing N(2)/CH(4) feedgas ratio (CH(4) was fixed) in He/H(2)/CH(4)/N(2) plasma, a substantial increase of CN radical (normalized by Balmer H(α) line) was observed along with a drop in surface roughness up to a critical N(2)/CH(4) ratio of 0.4. The CN radical concentration in the plasma was thus correlated to the formation of ultrasmooth nanostructured diamond films.

Optical magnetometry of superconductors using nitrogen - vacancy centers in diamond films

NASA Astrophysics Data System (ADS)

Joshi, K. R.; Nusran, N. M.; Cho, Kyuil; Tanatar, M. A.; Bud'Ko, S. L.; Canfield, P. C.; Prozorov, R.

Spin-dependent fluorescence of nitrogen - vacancy (NV) centers in diamond has emerged as a promising tool for non-invasive sensitive magnetometry with excellent sensitivity. In this work, we employ ensembles of NV centers implanted at the surface of a diamond film to study magnetic induction as the function of position, magnetic field and temperature in superconductors after different cooling/heating protocols and magnetic history. One of the motivations of our work is to study the structure of the Meissner expulsion upon field cooling, where we observe significant deviations from the simple, textbook example. Another is to determine the lower superconducting critical field, Hc1. Conventional Nb is compared with borocarbides (LuNi2B2C) and iron-pnictides(CaKFe4As4). Supported by the USDOE/Office of Science BES Materials Science and Engineering Division under contract DE-AC02-07CH11358.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

NASA Astrophysics Data System (ADS)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

2016-01-01

Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

1996-01-01

Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

Test and study on mirror quality of ultra-precision diamond turning

NASA Astrophysics Data System (ADS)

Chang, Yanyan; Sun, Tao; Li, Zengqiang; Wu, Baosen

2014-09-01

Using the diamond turning lathe and mono crystalline diamond tool, the aluminum alloy of 2A12 was cut under different cutting parameters including cutting speed, feed rate and depth of cut and the mirror surfaces were made. The surface roughness, micro hardness and residual stress of the mirror surface were tested by the surface profiler, the universal hardness tester and X-stress Robot. The influences of the cutting parameters on the mirror quality were studied. The research results have theoretical and practical significance to the selection of the optimal cutting parameters in ultraprecision diamond turning.

Friction Durability of Extremely Thin Diamond-Like Carbon Films at High Temperature

PubMed Central

Miyake, Shojiro; Suzuki, Shota; Miyake, Masatoshi

2017-01-01

To clarify the friction durability, both during and after the high-temperature heating of nanometer-thick diamond-like carbon (DLC) films, deposited using filtered cathodic vacuum arc (FCVA) and plasma chemical vapor deposition (P-CVD) methods, the dependence of the friction coefficient on the load and sliding cycles of the DLC films, were evaluated. Cluster-I consisted of a low friction area in which the DLC film was effective, while cluster-II consisted of a high friction area in which the lubricating effect of the DLC film was lost. The friction durability of the films was evaluated by statistical cluster analysis. Extremely thin FCVA-DLC films exhibited an excellent wear resistance at room temperature, but their friction durability was decreased at high temperatures. In contrast, the durability of the P-CVD-DLC films was increased at high temperatures when compared with that observed at room temperature. This inverse dependence on temperature corresponded to the nano-friction results obtained by atomic force microscopy. The decrease in the friction durability of the FCVA-DLC films at high temperatures, was caused by a complex effect of temperature and friction. The tribochemical reaction produced by the P-CVD-DLC films reduced their friction coefficient, increasing their durability at high temperatures. PMID:28772520

Friction Durability of Extremely Thin Diamond-Like Carbon Films at High Temperature.

PubMed

Miyake, Shojiro; Suzuki, Shota; Miyake, Masatoshi

2017-02-10

To clarify the friction durability, both during and after the high-temperature heating of nanometer-thick diamond-like carbon (DLC) films, deposited using filtered cathodic vacuum arc (FCVA) and plasma chemical vapor deposition (P-CVD) methods, the dependence of the friction coefficient on the load and sliding cycles of the DLC films, were evaluated. Cluster-I consisted of a low friction area in which the DLC film was effective, while cluster-II consisted of a high friction area in which the lubricating effect of the DLC film was lost. The friction durability of the films was evaluated by statistical cluster analysis. Extremely thin FCVA-DLC films exhibited an excellent wear resistance at room temperature, but their friction durability was decreased at high temperatures. In contrast, the durability of the P-CVD-DLC films was increased at high temperatures when compared with that observed at room temperature. This inverse dependence on temperature corresponded to the nano-friction results obtained by atomic force microscopy. The decrease in the friction durability of the FCVA-DLC films at high temperatures, was caused by a complex effect of temperature and friction. The tribochemical reaction produced by the P-CVD-DLC films reduced their friction coefficient, increasing their durability at high temperatures.

Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

NASA Astrophysics Data System (ADS)

Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

2018-05-01

Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

Direct Coating of Nanocrystalline Diamond on Steel

NASA Astrophysics Data System (ADS)

Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

2012-09-01

Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

Ferromagnetic order in diamond-like carbon films by Co implantation

NASA Astrophysics Data System (ADS)

Gupta, Prasanth; Williams, Grant; Markwitz, Andreas

2016-02-01

We report the observation of ferromagnetic order in diamond-like carbon (DLC) films made by mass selective ion beam deposition and after low energy implantation with Co ions. Different Co fluences were studied with a peak concentration of up to 25% at an average Co implantation depth of 30 nm. The saturation moment per Co atom (0.2-0.3 μ B) was found to be strongly dependent on temperature and it was significantly lower than that reported in bulk cobalt or cobalt nanoparticles (1.67 μ B per Co atom). The observed magnetic moment cannot be attributed to ferromagnetic nanoparticles as no evidence for superparamagnetism was detected. The magnetic order observed may be due to Co bonding in DLC possibly leading to dilute ferromagnetic semiconductor behaviour with an inhomogeneous distribution of cobalt atoms. Raman spectroscopy measurements showed that Co implantation resulted in an increase in the sp2 clustering with increasing Co fluence. Thus, our results show that Co implantation into DLC films increases the graphitic properties of the film and leads to magnetic order at room temperature.

Functionalization of nanocrystalline diamond films with phthalocyanines

NASA Astrophysics Data System (ADS)

Petkov, Christo; Reintanz, Philipp M.; Kulisch, Wilhelm; Degenhardt, Anna Katharina; Weidner, Tobias; Baio, Joe E.; Merz, Rolf; Kopnarski, Michael; Siemeling, Ulrich; Reithmaier, Johann Peter; Popov, Cyril

2016-08-01

Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

Measurement of the secondary electron emission from CVD diamond films using phosphor screen detectors

NASA Astrophysics Data System (ADS)

Vaz, R.; May, P. W.; Fox, N. A.; Harwood, C. J.; Chatterjee, V.; Smith, J. A.; Horsfield, C. J.; Lapington, J. S.; Osbourne, S.

2015-03-01

Diamond-based photomultipliers have the potential to provide a significant improvement over existing devices due to diamond's high secondary electron yield and narrow energy distribution of secondary electrons which improves energy resolution creating extremely fast response times. In this paper we describe an experimental apparatus designed to study secondary electron emission from diamond membranes only 400 nm thick, observed in reflection and transmission configurations. The setup consists of a system of calibrated P22 green phosphor screens acting as radiation converters which are used in combination with photomultiplier tubes to acquire secondary emission yield data from the diamond samples. The superior signal voltage sampling of the phosphor screen setup compared with traditional Faraday Cup detection allows the variation in the secondary electron yield across the sample to be visualised, allowing spatial distributions to be obtained. Preliminary reflection and transmission yield data are presented as a function of primary electron energy for selected CVD diamond films and membranes. Reflection data were also obtained from the same sample set using a Faraday Cup detector setup. In general, the curves for secondary electron yield versus primary energy for both measurement setups were comparable. On average a 15-20% lower signal was recorded on our setup compared to the Faraday Cup, which was attributed to the lower photoluminescent efficiency of the P22 phosphor screens when operated at sub-kilovolt bias voltages.

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

PubMed

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Manoharan, D.; Sundaravel, B.; Lin, I. N.

2016-09-01

Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

DOEpatents

Carlisle, John A.; Auciello, Orlando; Birrell, James

2006-10-31

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumoto, R.; Sasama, Y.; Yamaguchi, T.

2016-07-15

A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

Erosion of fluorinated diamond-like carbon films by exposure to soft X-rays

NASA Astrophysics Data System (ADS)

Kanda, Kazuhiro; Takamatsu, Hiroki; Miura-Fujiwara, Eri; Akasaka, Hiroki; Saiga, Akihiro; Tamada, Koji

2018-04-01

The effects of soft X-ray irradiation on fluorinated diamond-like carbon (F-DLC) films were investigated using synchrotron radiation (SR). The Vickers hardness of the F-DLC films substantially increased from an initial value of about 290 to about 800 HV at a dose of 50 mA·h and the remained constant at about 1100 HV at doses of more than 300 mA·h. This dose dependence was consistent with those of the film thickness and elemental composition. The depth profile of the elemental composition inside each F-DLC film obtained by the measurement of the X-ray photoelectron spectrum (XPS) during sputtering showed that the composition ratio of fluorine was approximately constant from the surface to the neighborhood of the substrate. Namely, fluorine atoms were desorbed by SR irradiation from not only the surface but also the substrate neighborhood. Modification by SR irradiation was found to occur in the entire F-DLC film of about 200 nm thickness.

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

PubMed

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

A simple, space constrained NIRIM type reactor for chemical vapour deposition of diamond

NASA Astrophysics Data System (ADS)

Thomas, Evan L. H.; Ginés, Laia; Mandal, Soumen; Klemencic, Georgina M.; Williams, Oliver A.

2018-03-01

In this paper the design of a simple, space constrained chemical vapour deposition reactor for diamond growth is detailed. Based on the design by NIRIM, the reactor is composed of a quartz discharge tube placed within a 2.45 GHz waveguide to create the conditions required for metastable growth of diamond. Utilising largely off-the-shelf components and a modular design, the reactor allows for easy modification, repair, and cleaning between growth runs. The elements of the reactor design are laid out with the CAD files, parts list, and control files made easily available to enable replication. Finally, the quality of nanocrystalline diamond films produced are studied with SEM and Raman spectroscopy, with the observation of clear faceting and a large diamond fraction suggesting the design offers deposition of diamond with minimal complexity.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

An Observation of Diamond-Shaped Particle Structure in a Soya Phosphatidylcohline and Bacteriorhodopsin Composite Langmuir Blodgett Film Fabricated by Multilayer Molecular Thin Film Method

NASA Astrophysics Data System (ADS)

Tsujiuchi, Y.; Makino, Y.

A composite film of soya phosphatidylcohline (soya PC) and bacteriorhodopsin (BR) was fabricated by the multilayer molecular thin film method using fatty acid and lipid on a quartz substrate. Direct Force Microscopy (DFM), UV absorption spectra and IR absorption spectra of the film were characterized on the detail of surface structure of the film. The DFM data revealed that many rhombus (diamond-shaped) particles were observed in the film. The spectroscopic data exhibited the yield of M-intermediate of BR in the film. On our modelling of molecular configuration indicate that the coexistence of the strong inter-molecular interaction and the strong inter-molecular interaction between BR trimmers attributed to form the particles.

Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

PubMed

Khun, N W; Liu, E

2010-07-01

Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films.

Free-standing nanomechanical and nanophotonic structures in single-crystal diamond

NASA Astrophysics Data System (ADS)

Burek, Michael John

Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast

Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

PubMed

Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

2013-11-01

To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

Peculiarities of both light and beta-particles scattering by ultrathin diamond-like semiconductor film.

PubMed

Rumyantsev, Vladimir V; Shtaerman, Esfir Y

2008-02-01

Peculiarities of scattering of TM-polarized light wave by a diamond-like crystalline nano-layer are studied. They are due to specific dispersion of n-phonon polaritons localized in the layer. The IR polaritons discussed here (relating to diamond and Si crystals which are nonpolar materials) will only appear if some of the vibration modes become polar, e.g., due to the presence of the surface. As a result of mixing of g- and u-modes of ion oscillations along the (111)-direction in the near-surface layer, it is possible to observe additional (with respect to bulk) scattering of coherent electromagnetic waves of the Stokes and anti-Stokes frequencies. beta-particles can be utilized as an independent tool of study of new semiconductors, in particular thin diamond films. The effect associated with response of a quasi-two-dimensional diamond-like layer to the moving electron field is considered. beta-particle field induces phonon excitation modes to arise in the material. Coupled with the beta-particle electromagnetic modes they generate polaritons. Spectral density of the radiation intensity of the flashed phonon polaritons has been estimated as a function of the layer thickness as well as of the scattering angle and the beta-particle velocity.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Composition and properties of the so-called 'diamond-like' amorphous carbon films

NASA Technical Reports Server (NTRS)

Angus, J. C.; Stultz, J. E.; Shiller, P. J.; Macdonald, J. R.; Mirtich, M. J.

1984-01-01

The composition of amorphous 'diamond-like' films made by direct low energy ion beam deposition, R.F. discharge and sputtering was determined by nuclear reaction analysis, IR spectroscopy and microcombustion chemical analysis. The nuclear reaction analysis showed very similar hydrogen depth profiles for all three types of samples. The atomic ratio of hydrogen to carbon was approximately 0.2 at the film surface and rose to approximately 1.0 at a depth of 500 A. The integrated intensity of the C-H stretching band at about 2900 per cm indicates that the amount of chemically bonded hydrogen is less than the total hydrogen content. Combustion analysis confirmed the overall atomic ratio of hydrogen to carbon determined by nuclear reaction analysis. The chemical state of the non-bonded hydrogen was not determined; however, the effective diffusion coefficient computed from the hydrogen depth profile was extremely low. This indicates either that the films are exceedingly impermeable or that the non-bonded hydrogen requires an additional activated step to leave the films, e.g., desorption or chemical reaction.

Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katamune, Yūki, E-mail: yuki-katamune@kyudai.jp; Takeichi, Satoshi; Ohmagari, Shinya

2015-11-15

Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bondsmore » at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.« less

Design and investigation of properties of nanocrystalline diamond optical planar waveguides.

PubMed

Prajzler, Vaclav; Varga, Marian; Nekvindova, Pavla; Remes, Zdenek; Kromka, Alexander

2013-04-08

Diamond thin films have remarkable properties comparable with natural diamond. Because of these properties it is a very promising material for many various applications (sensors, heat sink, optical mirrors, chemical and radiation wear, cold cathodes, tissue engineering, etc.) In this paper we report about design, deposition and measurement of properties of optical planar waveguides fabricated from nanocrystalline diamond thin films. The nanocrystalline diamond planar waveguide was deposited by microwave plasma enhanced chemical vapor deposition and the structure of the deposited film was studied by scanning electron microscopy and Raman spectroscopy. The design of the presented planar waveguides was realized on the bases of modified dispersion equation and was schemed for 632.8 nm, 964 nm, 1 310 nm and 1 550 nm wavelengths. Waveguiding properties were examined by prism coupling technique and it was found that the diamond based planar optical element guided one fundamental mode for all measured wavelengths. Values of the refractive indices of our NCD thin film measured at various wavelengths were almost the same as those of natural diamond.

Conversion of fullerenes to diamond

DOEpatents

Gruen, Dieter M.

1994-01-01

A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.

Observation of twinning in diamond CVD films

NASA Astrophysics Data System (ADS)

Marciniak, W.; Fabisiak, K.; Orzeszko, S.; Rozploch, F.

1992-10-01

Diamond particles prepared by dc-glow-discharge enhanced HF-CVD hybrid method, from a mixture of acetone vapor and hydrogen gas have been examined by TEM, RHEED and dark field method of observation. Results suggest the presence of twinned diamond particles, which can be reconstructed by a sequence of twinning operations. Contrary to the 'stick model' of the lattice, very common five-fold symmetry of diamond microcrystals may be obtained by applying a number of edge dislocations rather than the continuous deformation of many tetrahedral C-C bonds.

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Samuel L.; Samudrala, Gopi K.; Catledge, Shane A.

Early stage nucleation morphologies of spatially localized nanocrystalline diamond (NCD) micro-anvils grown on (100)-oriented single crystal diamond (SCD) anvil surfaces were analyzed and investigated for applications in high pressure studies on materials. NCD was grown on SCD using Microwave Plasma Chemical Vapor Deposition (MPCVD) for brief time intervals ranging from 1-15 minutes. Early stage film morphologies were characterized using scanning electron microscopy (SEM) and Raman spectroscopy and were compared to films grown for several hours. Rapid nucleation and growth of NCD on SCD is demonstrated without any pre-growth seeding of the substrate surface. As grown NCD diamond micro-anvils on SCDmore » were used to generate static pressure of 0.5 Terapascal (TPa) on a tungsten sample as measured by synchrotron x-ray diffraction in a diamond anvil cell. Atomic force microscopy (AFM) analysis after decompression from ultrahigh pressures showed that the detachment of the NCD stage occurred in the bulk of the SCD and not at the interface, suggesting significant adhesive bond strength between nanocrystalline and single crystal diamond.« less

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

DOE PAGES

Moore, Samuel L.; Samudrala, Gopi K.; Catledge, Shane A.; ...

2018-01-23

Early stage nucleation morphologies of spatially localized nanocrystalline diamond (NCD) micro-anvils grown on (100)-oriented single crystal diamond (SCD) anvil surfaces were analyzed and investigated for applications in high pressure studies on materials. NCD was grown on SCD using Microwave Plasma Chemical Vapor Deposition (MPCVD) for brief time intervals ranging from 1-15 minutes. Early stage film morphologies were characterized using scanning electron microscopy (SEM) and Raman spectroscopy and were compared to films grown for several hours. Rapid nucleation and growth of NCD on SCD is demonstrated without any pre-growth seeding of the substrate surface. As grown NCD diamond micro-anvils on SCDmore » were used to generate static pressure of 0.5 Terapascal (TPa) on a tungsten sample as measured by synchrotron x-ray diffraction in a diamond anvil cell. Atomic force microscopy (AFM) analysis after decompression from ultrahigh pressures showed that the detachment of the NCD stage occurred in the bulk of the SCD and not at the interface, suggesting significant adhesive bond strength between nanocrystalline and single crystal diamond.« less

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

NASA Astrophysics Data System (ADS)

Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

2014-08-01

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

NASA Astrophysics Data System (ADS)

Okhotnikov, V. V.; Linnik, S. A.; Gaidaichuk, A. V.; Shashev, D. V.; Nazarova, G. Yu; Yurchenko, V. I.

2016-02-01

A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 μm were obtained. A high density of polycrystallites in the coating area was reached (up to 32·107 pcs/cm2). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of “hot filaments” in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments,).

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.

PubMed

Ro, Ruyen; Chiang, Yuan-Feng; Sung, Chia-Chi; Lee, Ruyue; Wu, Sean

2010-01-01

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.

Diamond film deposition on WC-Co and steel substrates with a CrN interlayer for tribological applications

NASA Astrophysics Data System (ADS)

Chandran, Maneesh; Hoffman, Alon

2016-06-01

The most renowned property of diamond is its exceptional hardness. By depositing diamond films on tungsten carbide (WC-Co) and steel substrates, the hardness of diamond can be combined with the toughness of these materials, resulting in an excellent wear resistance material for tribological applications. However, poor adhesion of diamond coating on these substrates leads to a lesser lifetime for the diamond coated tools than expected. The prime reasons for the lack of proper adhesion are the preferential formation of graphitic layer at the interface due to the catalytic activities of cobalt/iron and the interfacial residual stresses due to the mismatch in thermal expansion coefficients of diamond (1.5  ×  10-6 K-1) and WC-Co (5.2  ×  10-6 K-1) or steel (12  ×  10-6 K-1). In this review, we discuss the possibility of using a Cr-N interlayer as a diffusion barrier to prevent the catalytic activities of cobalt/iron and also to relax the interfacial residual stresses to some extent to enhance the adhesion of diamond coatings on these substrates. An overview of the most pertinent results of the last two decades, including the recent progress is introduced. We describe in detail how the Cr-N interlayer with the desired properties is fabricated. We give a concise overview of diamond deposition process, including the methods to vary the grain size from microcrystalline to nanocrystalline, which are suitable for some tribological applications. We describe in detail on surface and interface analysis, residual stress measurements, assessment adhesion strength and tribological performance of diamond coated WC-Co and steel substrates using various characterization techniques. We conclude by highlighting the current progress and future perspectives of diamond coatings on these substrates for tribological applications.

Fabrication and electrochemistry characteristics of nickel-doped diamond-like carbon film toward applications in non-enzymatic glucose detection

NASA Astrophysics Data System (ADS)

Liu, Chi-Wen; Chen, Wei-En; Sun, Yin Tung Albert; Lin, Chii-Ruey

2018-04-01

This research work focused on the fabrication of nickel-doped diamond-like carbon (DLC) films and their characteristics including of surface morphology, microstructure, and electrochemical aiming at applications in non-enzymatic glucose detection. Novel nanodiamond target was employed in unbalanced magnetron radio-frequency co-sputtering process to prepared high quality Ni-doped DLC thin film at room temperature. TEM analysis reveals a highly uniform distribution of Ni crystallites in amorphous carbon matrix with fraction ranged from 3 to 11.5 at.% which is considered as active sites for the glucose detection. Our cyclic voltammetry measurements using 0.1 M H2SO4 solution demonstrated that the as-prepared Ni-doped DLC films possess large electrochemical potential window of 2.12 V, and this was also observed to be significantly reduced at high Ni doping level owing to lower sp3 fraction. The non-enzymatic glucose detection investigation indicates that the Ni-doped DLC thin film electrode prepared under 7 W of DC sputtering power on Ni target possesses good detecting performance, high stability, and high sensitivity to glucose concentration up to 10 mM, even with the existence of uric acid and ascorbic acid. The peak current was observed to be proportional to glucose concentration and scanning rate, demonstrating highly reversibility redox process of the film electrode and glucose.

Nitrogen doping, optical characterization, and electron emission study of diamond

NASA Astrophysics Data System (ADS)

Park, Minseo

Nitrogen-doped chemical vapor deposited (CVD) diamond films were synthesized with N2 (nitrogen) and C3H6N6 (melamine) as doping sources. More effective substitutional nitrogen doping was achieved with C3H6N6 than with N 2. Since a melamine molecule has an existing cyclic C-N bonded ring, it is expected that the incorporation of nitrogen on substitution diamond lattice should be facilitated. The diamond film doped with N2 contained a significant amount of non-diamond carbon phases. The samples were analyzed by scanning electron microscopy, Raman scattering, photoluminescence spectroscopy, and field emission measurements. The sample produced using N 2 exhibited a lower field emission turn-on field than the sample produced using C3H6N6. It is believed that the presence of the graphitic phases (or amorphous sp2 carbon) at the grain boundaries of the diamond and/or the nanocrystallinity (or microcrystallinity) of the diamond play a significant role in lowering the turn-on field of the film produced using N2. The nature of the nitrogen-related 1190 cm-1 Raman peak was investigated. Nitrogen is incorporated predominantly to the crystalline or amorphous sp2 phases when nitrogen is added to the growing diamond. Field emission characteristics from metallic field emitter coated with type Ia and Ib diamond powders were also investigated. No significant difference in electron emission characteristics were found in these samples. Voltage-dependent field emission energy distribution (V-FEED) measurement was performed to analyze the energy distribution of the emitted electrons. It is believed that substitutional nitrogen doping plays only a minor role in changing field emission characteristics in diamond. Discontinuous diamond films were deposited on silicon using a microwave plasma chemical vapor deposition (MPCVD) system. The diamond deposits were sharpened by argon ion beam etching. Raman spectroscopy was carried out to study the structural change of the diamond after ion beam

Studies of Diamonds Using Electron Paramagnetic Resonance and Other Techniques

NASA Astrophysics Data System (ADS)

Zhang, Shigang

Studies of impurities/defects in diamonds grown with the high-temperature high-pressure technique (HTHP) and B- and P-doped diamond films using fast ion implantation and chemical evaporation have been carried out. The main technique employed in the study is electron paramagnetic resonance (EPR). Raman, laser and X-ray fluorescence are also used to characterize the samples. While other commonly used techniques such as infrared (IR) spectroscopy detect no nitrogen in an isotopically enriched ^ {12}C diamond, the clear EPR spectrum consistently measures a nitrogen concentration of about 0.05ppm by calibration against a few standards. The ^{12}C diamond is evaluated to be ideal for optical window application and studies of diamond properties. Neither the EPR lineshape nor the second moment supports a random nitrogen distribution in the ^{12}C diamond. Instead, the average nitrogen distance is found to be larger than the of the random nitrogen distribution. The g-tensor for substitutional nitrogen is found to be axially symmetric along the (111) direction with g_| - g_| = 0.00002(5). In the study of a HTHP IIb blue semiconducting diamond, neutral N is measured with a concentration of 0.02ppm. The result is not well understood since neutral nitrogen is expected to lose its extra electron to boron due to electron-hole recombination. Further studies are suggested to better understand this result. EPR studies of two sets of P-doped diamond films grown using fast ion implantation and chemical incorporation reveal that defect levels caused by diamond doping are still too high for semiconductor applications. As expected, P doping causes a defect level two orders of magnitude higher than B doping, which can be explained by the relatively larger size of P than B. The theoretical analysis based on EPR hyperfine interaction suggest that P forms a shallow donor in diamond and that the electron density at the P site is |psi(0)|^2 = 0.27 times 10^{24} cm^ {-3}. This is consistent

On the Fabrication and Behavior of Diamond Microelectromechanical Sensors (DMEMS)

NASA Technical Reports Server (NTRS)

Holmes, K.; Davidson, J. L.; Kang, W. P.; Howell, M.

2001-01-01

CVD (chemically vapor deposited) diamond films can be processed similar to "conventional" semiconductor device fabrication and as such can be used to achieve microelectromechanical structures (MEMS) also similar to, for example, silicon technology. Very small cantilever beams, membranes, stripes, tips, etc. can be constructed in doped and undoped diamond films and offer an array of choices in diamond with its known superior properties such as elastic modulus, high temperature semiconduction, high thermal conductivity, very low coefficient of expansion and numerous other diamond parameters. This paper will review the construction and behavior of the second generation DMEMS devices comprised as an accelerometer with a diamond diaphragm for use in very high G applications and a diamond pressure sensor for very high temperature and frequency response.

Diamond bio electronics.

PubMed

Linares, Robert; Doering, Patrick; Linares, Bryant

2009-01-01

The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

Mechanical design of thin-film diamond crystal mounting apparatus for coherence preservation hard x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming, E-mail: shu@aps.anl.gov; Shvyd’ko, Yuri V.; Stoupin, Stanislav

2016-07-27

A new thin-film diamond crystal mounting apparatus has been designed at the Advanced Photon Source (APS) for coherence preservation hard x-ray optics with optimized thermal contact and minimized crystal strain. This novel mechanical design can be applied to new development in the field of: x-ray optics cavities for hard x-ray free-electron laser oscillators (XFELOs), self-seeding monochromators for hard x-ray free-electron laser (XFEL) with high average thermal loading, high heat load diamond crystal monochromators and beam-sharing/beam-split-and-delay devices for XFEL facilities and future upgraded high-brightness coherent x-ray source in the MBA lattice configuration at the APS.

Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

PubMed Central

2008-01-01

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS) were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

NASA Astrophysics Data System (ADS)

Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

2015-12-01

We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

The induction of nanographitic phase on Fe coated diamond films for the enhancement in electron field emission properties

NASA Astrophysics Data System (ADS)

Panda, Kalpataru; Sundaravel, B.; Panigrahi, B. K.; Chen, H.-C.; Huang, P.-C.; Shih, W.-C.; Lo, S.-C.; Lin, L.-J.; Lee, C.-Y.; Lin, I.-N.

2013-03-01

A thin layer of iron coating and subsequent post-annealing (Fe-coating/post-annealing) is seen to significantly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. The best EFE properties, with a turn on field (E0) of 1.98 V/μm and current density (Je) of 705 μA/cm2 at 7.5 V/μm, are obtained for the films, which were Fe-coated/post-annealed at 900 °C in H2 atmosphere. The mechanism behind the enhanced EFE properties of Fe coated/post-annealed UNCD films are explained by the microstructural analysis which shows formation of nanographitic phase surrounding the Fe (or Fe3C) nanoparticles. The role of the nanographitic phase in improving the emission sites of Fe coated/post-annealed UNCD films is clearly revealed by the current imaging tunneling spectroscopy (CITS) images. The CITS images clearly show significant increase in emission sites in Fe-coated/post-annealed UNCD films than the as-deposited one. Enhanced emission sites are mostly seen around the boundaries of the Fe (or Fe3C) nanoparticles which were formed due to the Fe-coating/post-annealing processes. Moreover, the Fe-coating/post-annealing processes enhance the EFE properties of UNCD films more than that on the microcrystalline diamond films. The authentic factor, resulting in such a phenomenon, is attributed to the unique granular structure of the UNCD films. The nano-sized and uniformly distributed grains of UNCD films, resulted in markedly smaller and densely populated Fe-clusters, which, in turn, induced more finer and higher populated nano-graphite clusters.

Dose rate dependence for different dosimeters and detectors: TLD, OSL, EBT films, and diamond detectors.

PubMed

Karsch, L; Beyreuther, E; Burris-Mog, T; Kraft, S; Richter, C; Zeil, K; Pawelke, J

2012-05-01

The use of laser accelerators in radiation therapy can perhaps increase the low number of proton and ion therapy facilities in some years due to the low investment costs and small size. The laser-based acceleration technology leads to a very high peak dose rate of about 10(11) Gy∕s. A first dosimetric task is the evaluation of dose rate dependence of clinical dosimeters and other detectors. The measurements were done at ELBE, a superconductive linear electron accelerator which generates electron pulses with 5 ps length at 20 MeV. The different dose rates are reached by adjusting the number of electrons in one beam pulse. Three clinical dosimeters (TLD, OSL, and EBT radiochromic films) were irradiated with four different dose rates and nearly the same dose. A faraday cup, an integrating current transformer, and an ionization chamber were used to control the particle flux on the dosimeters. Furthermore two diamond detectors were tested. The dosimeters are dose rate independent up to 4●10(9) Gy∕s within 2% (OSL and TLD) and up to 15●10(9) Gy∕s within 5% (EBT films). The diamond detectors show strong dose rate dependence. TLD, OSL dosimeters, and EBT films are suitable for pulsed beams with a very high pulse dose rate like laser accelerated particle beams.

Dose rate dependence for different dosimeters and detectors: TLD, OSL, EBT films, and diamond detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karsch, L.; Beyreuther, E.; Burris-Mog, T.

Purpose: The use of laser accelerators in radiation therapy can perhaps increase the low number of proton and ion therapy facilities in some years due to the low investment costs and small size. The laser-based acceleration technology leads to a very high peak dose rate of about 10{sup 11} Gy/s. A first dosimetric task is the evaluation of dose rate dependence of clinical dosimeters and other detectors. Methods: The measurements were done at ELBE, a superconductive linear electron accelerator which generates electron pulses with 5 ps length at 20 MeV. The different dose rates are reached by adjusting the numbermore » of electrons in one beam pulse. Three clinical dosimeters (TLD, OSL, and EBT radiochromic films) were irradiated with four different dose rates and nearly the same dose. A faraday cup, an integrating current transformer, and an ionization chamber were used to control the particle flux on the dosimeters. Furthermore two diamond detectors were tested. Results: The dosimeters are dose rate independent up to 410{sup 9} Gy/s within 2% (OSL and TLD) and up to 1510{sup 9} Gy/s within 5% (EBT films). The diamond detectors show strong dose rate dependence. Conclusions: TLD, OSL dosimeters, and EBT films are suitable for pulsed beams with a very high pulse dose rate like laser accelerated particle beams.« less

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

NASA Astrophysics Data System (ADS)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Micro and nanocrystalline diamond formation on reticulated vitreous carbon substrate

NASA Astrophysics Data System (ADS)

Diniz, A. V.; Trava-Airoldi, V. J.; Corat, E. J.; Ferreira, N. G.

2005-10-01

High diamond nucleation and a three-dimensional growth on reticulated vitreous carbon substrate are obtained by chemical vapor deposition. Scanning electron microscopy images show continuous films covering the whole substrate including the center of 3.5 mm thick porous samples. It is evident the nanocrystalline diamond (NCD) film formation on deeper substrate regions. The grain size can vary from nano to micro scale for deposition time of 20 h. Raman spectra of sample regions closer to filaments exhibit well-defined diamond line. For central regions of sample (depth between 1.0 and 2.0 mm) Raman spectra also confirm NCD film.

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications.

PubMed

Luong, John H T; Male, Keith B; Glennon, Jeremy D

2009-10-01

In recent years, conductive diamond electrodes for electrochemical applications have been a major focus of research and development. The impetus behind such endeavors could be attributed to their wide potential window, low background current, chemical inertness, and mechanical durability. Several analytes can be oxidized by conducting diamond compared to other carbon-based materials before the breakdown of water in aqueous electrolytes. This is important for detecting and/or identifying species in solution since oxygen and hydrogen evolution do not interfere with the analysis. Thus, conductive diamond electrodes take electrochemical detection into new areas and extend their usefulness to analytes which are not feasible with conventional electrode materials. Different types of diamond electrodes, polycrystalline, microcrystalline, nanocrystalline and ultrananocrystalline, have been synthesized and characterized. Of particular interest is the synthesis of boron-doped diamond (BDD) films by chemical vapor deposition on various substrates. In the tetrahedral diamond lattice, each carbon atom is covalently bonded to its neighbors forming an extremely robust crystalline structure. Some carbon atoms in the lattice are substituted with boron to provide electrical conductivity. Modification strategies of doped diamond electrodes with metallic nanoparticles and/or electropolymerized films are of importance to impart novel characteristics or to improve the performance of diamond electrodes. Biofunctionalization of diamond films is also feasible to foster several useful bioanalytical applications. A plethora of opportunities for nanoscale analytical devices based on conducting diamond is anticipated in the very near future.

Nano- and microcrystalline diamond deposition on pretreated WC-Co substrates: structural properties and adhesion

NASA Astrophysics Data System (ADS)

Fraga, M. A.; Contin, A.; Rodríguez, L. A. A.; Vieira, J.; Campos, R. A.; Corat, E. J.; Trava Airoldi, V. J.

2016-02-01

Many developments have been made to improve the quality and adherence of CVD diamond films onto WC-Co hard metal tools by the removing the cobalt from the substrate surface through substrate pretreatments. Here we compare the efficiency of three chemical pretreatments of WC-Co substrates for this purpose. First, the work was focused on a detailed study of the composition and structure of as-polished and pretreated substrate surfaces to characterize the effects of the substrate preparation. Considering this objective, a set of WC-9% Co substrates, before and after pretreatment, was analyzed by FEG-SEM, EDS and x-ray diffraction (XRD). The second stage of the work was devoted to the evaluation of the influence of seeding process, using 4 nm diamond nanoparticles, on the morphology and roughness of the pretreated substrates. The last and most important stage was to deposit diamond coatings with different crystallite sizes (nano and micro) by hot-filament CVD to understand fully the mechanism of growth and adhesion of CVD diamond films on pretreated WC-Co substrates. The transition from nano to microcrystalline diamond was achieved by controlling the CH4/H2 gas ratio. The nano and microcrystalline samples were grown under same time at different substrate temperatures 600 °C and 800 °C, respectively. The different substrate temperatures allowed the analysis of the cobalt diffusion from the bulk to the substrate surface during CVD film growth. Furthermore, it was possible to evaluate how the coating adhesion is affected by the diffusion. The diamond coatings were characterized by Raman spectroscopy, XRD, EDS, FEG-SEM, atomic force microscope and 1500 N Rockwell indentation to evaluate the adhesion.

Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

PubMed Central

Liskova, Jana; Babchenko, Oleg; Varga, Marian; Kromka, Alexander; Hadraba, Daniel; Svindrych, Zdenek; Burdikova, Zuzana; Bacakova, Lucie

2015-01-01

Nanocrystalline diamond (NCD) films are promising materials for bone implant coatings because of their biocompatibility, chemical resistance, and mechanical hardness. Moreover, NCD wettability can be tailored by grafting specific atoms. The NCD films used in this study were grown on silicon substrates by microwave plasma-enhanced chemical vapor deposition and grafted by hydrogen atoms (H-termination) or oxygen atoms (O-termination). Human osteoblast-like Saos-2 cells were used for biological studies on H-terminated and O-terminated NCD films. The adhesion, growth, and subsequent differentiation of the osteoblasts on NCD films were examined, and the extracellular matrix production and composition were quantified. The osteoblasts that had been cultivated on the O-terminated NCD films exhibited a higher growth rate than those grown on the H-terminated NCD films. The mature collagen fibers were detected in Saos-2 cells on both the H-terminated and O-terminated NCD films; however, the quantity of total collagen in the extracellular matrix was higher on the O-terminated NCD films, as were the amounts of calcium deposition and alkaline phosphatase activity. Nevertheless, the expression of genes for osteogenic markers – type I collagen, alkaline phosphatase, and osteocalcin – was either comparable on the H-terminated and O-terminated films or even lower on the O-terminated films. In conclusion, the higher wettability of the O-terminated NCD films is promising for adhesion and growth of osteoblasts. In addition, the O-terminated surface also seems to support the deposition of extracellular matrix proteins and extracellular matrix mineralization, and this is promising for better osteoconductivity of potential bone implant coatings. PMID:25670900

Production of Optical Quality Free Standing Diamond Wafer

DTIC Science & Technology

2008-05-19

Title : Production of Optical Quality Free Standing Diamond Wafer Prime Contractor : Onyx Optics, Inc. 6551 Sierra Lane Dublin, Ca 94568...www.onyxoptics.com Program Manager : Helmuth Meissner Onyx Optics, Inc. 6551 Sierra Lane Dublin, CA 94568 Email: hmeissner@onyxoptics.com Ph: 925...PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Onyx Optics, Inc. 6551 Sierra Lane Dublin, Ca 94568 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING

Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

2012-06-01

Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

NASA Astrophysics Data System (ADS)

Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

2006-04-01

We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

Charge multiplication effect in thin diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skukan, N., E-mail: nskukan@irb.hr; Grilj, V.; Sudić, I.

2016-07-25

Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanchemore » multiplication and radiation detectors with extreme radiation hardness.« less

Ti:Pt:Au:Ni thin-film CVD diamond sensor ability for charged particle detection.

PubMed

Kasiwattanawut, Haruetai; Tchouaso, Modeste Tchakoua; Prelas, Mark A

2018-05-22

This work demonstrates the development of diamond sensors with reliable contacts using a new metallization formula, which can operate under high-pressure gas environment. The metallization was created using thin film layers of titanium, platinum, gold and nickel deposited on a single crystal electronic grade CVD diamond chip. The contacts were 2 mm in diameter with thickness of 50/5/20/150 nm of Ti:Pt:Au:Ni. The optimum operating voltage of the sensor was determined from the current-voltage measurements. The sensor was calibrated with 239 Pu and 241 Am alpha radiation sources at 300 V. The energy resolution of the Ti:Pt:Au:Ni diamond sensor was determined to be 7.6% at 5.2 MeV of 239 Pu and 2.2% at 5.48 MeV of 241 Am. The high-pressure gas loading environment under which this sensor was used is discussed. Specifically, experimental observations are described using hydrogen loading of nickel as a means of initiating low energy nuclear reactions. No neutrons, electrons, ions or other ionizing radiations were observed in these experiments. Copyright © 2018 Elsevier Ltd. All rights reserved.

Probing superlubricity stability of hydrogenated diamond-like carbon film by varying sliding velocity

NASA Astrophysics Data System (ADS)

Liu, Yunhai; Yu, Bingjun; Cao, Zhongyue; Shi, Pengfei; Zhou, Ningning; Zhang, Bin; Zhang, Junyan; Qian, Linmao

2018-05-01

In this study, the superlubricity stability of hydrogenated diamond-like carbon (H-DLC) film in vacuum was investigated by varying the sliding velocity (30-700 mm/s). The relatively stable superlubricity state can be maintained for a long distance at low sliding velocity, whereas the superlubricity state quickly disappears and never recovers at high sliding velocity. Under superlubricity state, the transfer layer of H-DLC film was observed on the Al2O3 ball, which played a key role in obtaining ultra-low friction coefficient. Although the transfer layer can be generated at the beginning of the test, high-velocity sliding tends to accelerate the superlubricity failure and leads to the severe wear of H-DLC film. Analysis indicated that the main reason for superlubricity failure at high sliding velocity is not attributed to friction heat or the break of hydrogen passivation but to the absence of transfer layer on Al2O3 ball. The present study can enrich the understanding of superlubricity mechanism of H-DLC film.

Conversion of fullerenes to diamond

DOEpatents

Gruen, Dieter M.

1994-01-01

A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.

Synthesis of SiV-diamond particulates via the microwave plasma chemical deposition of ultrananocrystalline diamond on soda-lime glass fibers

NASA Astrophysics Data System (ADS)

Kunuku, Srinivasu; Chen, Yen-Chun; Yeh, Chien-Jui; Chang, Wen-Hao; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I.-Nan

2016-10-01

We report the synthesis of silicon-vacancy (SiV) incorporated spherical shaped ultrananocrystalline diamond (SiV-UNCD) particulates (size ∼1 μm) with bright luminescence at 738 nm. For this purpose, different granular structured polycrystalline diamond films and particulates were synthesized by using three different kinds of growth plasma conditions on the three types of substrate materials in the microwave plasma enhanced CVD process. The grain size dependent photoluminescence properties of nitrogen vacancy (NV) and SiV color centers have been investigated for different granular structured diamond samples. The luminescence of NV center and the associated phonon sidebands, which are usually observed in microcrystalline diamond and nanocrystalline diamond films, were effectively suppressed in UNCD films and UNCD particulates. Micron sized SiV-UNCD particulates with bright SiV emission has been attained by transfer of SiV-UNCD clusters on soda-lime glass fibers to inverted pyramidal cavities fabricated on Si substrates by the simple crushing of UNCD/soda-lime glass fibers in deionized water and ultrasonication. Such a plasma enhanced CVD process for synthesizing SiV-UNCD particulates with suppressed NV emission is simple and robust to attain the bright SiV-UNCD particulates to employ in practical applications.

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition.

PubMed

Moore, Eric; Jarrell, Joshua; Cao, Lei

2017-09-01

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate was carried out using a methane-hydrogen gas mixture with varying gas flow rates. The nucleation step was conducted for 30 minutes and provided sufficient nucleation sites to grow a diamond film on various locations on the substrate. The resulting diamond film was characterized using Raman spectroscopy exhibiting the strong Raman peak at 1332 cm -1 . Scanning electron microscopy was used to observe the surface morphology and the average grain size of the diamond film was observed to be on the order of ∼2-3 μm.

Deodorisation effect of diamond-like carbon/titanium dioxide multilayer thin films deposited onto polypropylene

NASA Astrophysics Data System (ADS)

Ozeki, K.; Hirakuri, K. K.; Masuzawa, T.

2011-04-01

Many types of plastic containers have been used for the storage of food. In the present study, diamond-like carbon (DLC)/titanium oxide (TiO2) multilayer thin films were deposited on polypropylene (PP) to prevent flavour retention and to remove flavour in plastic containers. For the flavour removal test, two types of multilayer films were prepared, DLC/TiO2 films and DLC/TiO2/DLC films. The residual gas concentration of acetaldehyde, ethylene, and turmeric compounds in bottle including the DLC/TiO2-coated and the DLC/TiO2/DLC-coated PP plates were measured after UV radiation, and the amount of adsorbed compounds to the plates was determined. The percentages of residual gas for acetaldehyde, ethylene, and turmeric with the DLC/TiO2 coated plates were 0.8%, 65.2% and 75.0% after 40 h of UV radiation, respectively. For the DLC/TiO2/DLC film, the percentages of residual gas for acetaldehyde, ethylene and turmeric decreased to 34.9%, 76.0% and 85.3% after 40 h of UV radiation, respectively. The DLC/TiO2/DLC film had a photocatalytic effect even though the TiO2 film was covered with the DLC film.

Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

PubMed

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

Characteristics of Diamond-Like Carbon Films Deposited on Polymer Dental Materials

NASA Astrophysics Data System (ADS)

Ohtake, Naoto; Uchi, Tomio; Yasuhara, Toshiyuki; Takashima, Mai

2012-09-01

Characterizations of diamond-like carbon (DLC) deposited on a polymer artificial tooth were performed. DLC films were deposited on dental parts made of poly(methyl methacrylate) (PMMA) resin by dc-pulse plasma chemical vapor deposition (CVD) from methane. Wear resistance test results revealed that a DLC-coated resin tooth has a very high wear resistance against tooth brushing, and endures 24 h brushing without a marked weight decrease. Cell cultivation test results show that DLC plays an important role in preventing cell death. Moreover, a biocompatibility test using a rabbit revealed that a connective tissue in the vicinity of DLC-coated PMMA is significantly thinner than that of noncoated PMMA. The numbers of inflammatory cells in the vicinity of DLC-coated and noncoated surfaces are 0 and 508 cells/mm2, respectively. These results led us to conclude that DLC films are an excellent material for use as the coating of a polymer artificial tooth in terms of not only high wear resistance but also biocompatibility.

Formation of nanocrystalline diamond in polymer like carbon films deposited by plasma CVD.

PubMed

Bhaduri, A; Chaudhuri, P

2009-09-01

Conventional plasma enhanced chemical vapour deposition (PECVD) method is generally not suitable for the growth of nanocrystalline diamond (NCD) films. However, our study shows that conditions favourable for powder formation help to grow large amount of nanocrystallites in conventional PECVD. With CH4 as the carbon source gas, dilution with Ar and moderate (50 W) rf power enhances formations of powders (nanoparticles) and C2 dimers within the plasma. On the other hand, with pure CH4 or with hydrogen diluted CH4, powder formation as also NCD growth is hindered. It is proposed that the nanoparticles formed in the plasma act as the "islands" while the C2 dimers are the "seeds" for the NCD growth. The structure of the films deposited on the grounded anode under different conditions of dilution has been studied. It is observed that with high Ar dilution the films contain NCD embedded in polymer like carbon (PLC) matrix.

Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

NASA Astrophysics Data System (ADS)

Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

2015-04-01

Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

Annealing Effects on Structure and Optical Properties of Diamond-Like Carbon Films Containing Silver.

PubMed

Meškinis, Šarūnas; Čiegis, Arvydas; Vasiliauskas, Andrius; Šlapikas, Kęstutis; Gudaitis, Rimantas; Yaremchuk, Iryna; Fitio, Volodymyr; Bobitski, Yaroslav; Tamulevičius, Sigitas

2016-12-01

In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out.

Concurrent improvement in biocompatibility and bioinertness of diamond-like carbon films with nitrogen doping.

PubMed

Liao, Wen-Hsiang; Lin, Chii-Ruey; Wei, Da-Hua; Shen, You-Ruey; Li, Yi-Chieh; Lee, Jen-Ai; Liang, Chia-Yao

2012-11-01

The surfaces of implantable biomaterials improving biocompatibility and bioinertness are critical for new application of bioimplantable devices. Diamond-like carbon (DLC) film is a promising biomaterial with use for coating bioimplantable devices because of its good biocompatibility, bioinertness, and mechanical properties. In this study, concurrent improvement in biocompatibility and bioinertness of DLC films has been achieved using N-incorporation technique. The N doping degree was found to play an important role in affecting the biocompatibility and bioinertness of N-doped DLC films. The results indicated that the N-doped DLC films deposited at N(2) concentration of 5% could help to create suitable condition of surface/structure/adhesion combination of DLC films in the both affinity of the L929 mouse fibroblasts and electrochemical inertness in the Hank's balanced salt solutions (simulating human body fluids). N doping supports the attachment and proliferation of cells and prevents the permeation of electrolyte solutions, thereby simultaneity improved the biocompatibility and bioinertness of DLC films. This finding is useful for the fabrication and encapsulation of in vivo devices without induced immune response in the human body. Copyright © 2012 Wiley Periodicals, Inc.

Annealing Effects on Structure and Optical Properties of Diamond-Like Carbon Films Containing Silver

NASA Astrophysics Data System (ADS)

Meškinis, Šarūnas; Čiegis, Arvydas; Vasiliauskas, Andrius; Šlapikas, Kęstutis; Gudaitis, Rimantas; Yaremchuk, Iryna; Fitio, Volodymyr; Bobitski, Yaroslav; Tamulevičius, Sigitas

2016-03-01

In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out.

CVD diamond substrate for microelectronics. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burden, J.; Gat, R.

1996-11-01

Chemical Vapor Deposition (CVD) of diamond films has evolved dramatically in recent years, and commercial opportunities for diamond substrates in thermal management applications are promising. The objective of this technology transfer initiative (TTI) is for Applied Science and Technology, Inc. (ASTEX) and AlliedSignal Federal Manufacturing and Technologies (FM&T) to jointly develop and document the manufacturing processes and procedures required for the fabrication of multichip module circuits using CVD diamond substrates, with the major emphasis of the project concentrating on lapping/polishing prior to metallization. ASTEX would provide diamond films for the study, and FM&T would use its experience in lapping, polishing,more » and substrate metallization to perform secondary processing on the parts. The primary goal of the project was to establish manufacturing processes that lower the manufacturing cost sufficiently to enable broad commercialization of the technology.« less

Intrinsic stress modulation in diamond like carbon films with incorporation of gold nanoparticles by PLA

NASA Astrophysics Data System (ADS)

Panda, Madhusmita; Krishnan, R.; Krishna, Nanda Gopala; Madapu, Kishore K.; Kamruddin, M.

2018-04-01

Intrinsic stress modulation in the diamond-like carbon (DLC) coatings with incorporation of gold nanoparticles was studied qualitatively from Raman shift. The films were deposited on Si (1 0 0) substrates by using Pulsed laser ablation (PLA) of pure pyrolytic graphite target and with a gold foil on it. Films compositional and chemical behavior was studied by X-ray photoelectron spectroscopy (XPS) and Visible Raman spectroscopy, respectively. The sp3 content obtained from XPS shows dramatic variation in DLC, DLC-Au(100), DLC-Au(200) and DLC-Au(300) as 39%, 41%, 47% and 66% with various gold contentsas 0%, 12%, 7.3% and 4.7%, respectively. The Raman spectra of DLC/Au films showed G-peak shift towards lower wavenumber indicating the reduction of intrinsic stress (internal compressive stress). The sp2, sp3 fraction in the films are also determined from FWHM (G-Peak).

The Effects of Boron Doping on Residual Stress of Hfcvd Diamond Film for Mems Applications

NASA Astrophysics Data System (ADS)

Zhao, Tianqi; Wang, Xinchang; Sun, Fanghong

In this study, the residual stress of boron-doped diamond (BDD) films is investigated as a function of boron doping level using X-ray diffraction (XRD) analysis. Boron doping level is controlled from 1000ppm to 9000ppm by dissolving trimethyl borate into acetone. BDD films are deposited on silicon wafers using a bias-enhanced hot filament chemical vapor deposition (BE-HFCVD) system. Residual stress calculated by sin2 ψ method varies linearly from -2.4GPa to -1.1GPa with increasing boron doping level. On the BDD film of -1.75GPa, free standing BDD cantilevers are fabricated by photolithography and ICP-RIE processes, then tested by laser Doppler vibrometer (LDV). A cantilever with resonant frequency of 183KHz and Q factor of 261 in the air is fabricated.

Characterisation of capacitive field-effect sensors with a nanocrystalline-diamond film as transducer material for multi-parameter sensing.

PubMed

Abouzar, M H; Poghossian, A; Razavi, A; Williams, O A; Bijnens, N; Wagner, P; Schöning, M J

2009-01-01

The feasibility of a capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) platform for multi-parameter sensing is demonstrated by realising EDIS sensors with an O-terminated nanocrystalline-diamond (NCD) film as transducer material for the detection of pH and penicillin concentration as well as for the label-free electrical monitoring of adsorption and binding of charged macromolecules, like polyelectrolytes. The NCD films were grown on p-Si-SiO(2) substrates by microwave plasma-enhanced chemical vapour deposition. To obtain O-terminated surfaces, the NCD films were treated in an oxidising medium. The NCD-based field-effect sensors have been characterised by means of constant-capacitance method. The average pH sensitivity of the O-terminated NCD film was 40 mV/pH. A low detection limit of 5 microM and a high penicillin G sensitivity of 65-70 mV/decade has been obtained for an EDIS penicillin biosensor with the adsorptively immobilised enzyme penicillinase. Alternating potential changes, having tendency to decrease with increasing the number of adsorbed polyelectrolyte layers, have been observed after the layer-by-layer deposition of polyelectrolyte multilayers, using positively charged PAH (poly (allylamine hydrochloride)) and a negatively charged PSS (poly (sodium 4-styrene sulfonate)) as a model system. The response mechanism of the developed EDIS sensors is discussed.

A study for anticorrosion and tribological behaviors of thin/thick diamond-like carbon films in seawater

NASA Astrophysics Data System (ADS)

Ye, Yewei; Jia, Shujuan; Zhang, Dawei; Liu, Wei; Zhao, Haichao

2018-03-01

The thin and thick diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering technique on 304L stainless steels and (100) silicon wafers. Microstructure, mechanical, corrosion and tribological properties were systematically investigated by SEM, Raman, nanoindenter, scratch tester, modulab electrochemical workstation and R-tec multifunctional tribological tester. Results showed that the adhesion force presented a descending trend with the growth in soaking time. The adhesion force of the thin DLC film with high residual compressive stress (‑3.72 GPa) was higher than that of the thick DLC film (‑2.96 GPa). During the corrosion test, the thick DLC film showed a higher impendence and a lower corrosion current density than the thin DLC film, which is attributed to the barrier action of large thickness. Compared to bare 304L substrate, the friction coefficients and wear rates of DLC films in seawater were obviously decreased. Meanwhile, the thin DLC film with ideal residual compressive stress, super adhesion force and good plastic deformation resistance revealed an excellent anti-wear ability in seawater.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

PubMed

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

NASA Astrophysics Data System (ADS)

Tomcik, B.

2010-07-01

Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

NASA Astrophysics Data System (ADS)

Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-09-01

Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru; Ralchenko, V. G.; Bolshakov, A. P.

2013-12-15

Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likelymore » due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.« less

Tailoring nanocrystalline diamond coated on titanium for osteoblast adhesion.

PubMed

Pareta, Rajesh; Yang, Lei; Kothari, Abhishek; Sirinrath, Sirivisoot; Xiao, Xingcheng; Sheldon, Brian W; Webster, Thomas J

2010-10-01

Diamond coatings with superior chemical stability, antiwear, and cytocompatibility properties have been considered for lengthening the lifetime of metallic orthopedic implants for over a decade. In this study, an attempt to tailor the surface properties of diamond films on titanium to promote osteoblast (bone forming cell) adhesion was reported. The surface properties investigated here included the size of diamond surface features, topography, wettability, and surface chemistry, all of which were controlled during microwave plasma enhanced chemical-vapor-deposition (MPCVD) processes using CH4-Ar-H2 gas mixtures. The hardness and elastic modulus of the diamond films were also determined. H2 concentration in the plasma was altered to control the crystallinity, grain size, and topography of the diamond coatings, and specific plasma gases (O2 and NH3) were introduced to change the surface chemistry of the diamond coatings. To understand the impact of the altered surface properties on osteoblast responses, cell adhesion tests were performed on the various diamond-coated titanium. The results revealed that nanocrystalline diamond (grain sizes <100 nm) coated titanium dramatically increased surface hardness, and the introduction of O2 and NH3 during the MPCVD process promoted osteoblast adhesion on diamond and, thus, should be further studied for improving orthopedic applications. Copyright 2010 Wiley Periodicals, Inc. J Biomed Mater Res Part A, 2010.

Modulation of polymer refractive indices with diamond nanoparticles for metal-free multilayer film mirrors.

PubMed

Ogata, Tomonari; Yagi, Ryohei; Nakamura, Nozomi; Kuwahara, Yutaka; Kurihara, Seiji

2012-08-01

Modulation of the refractive index of a polymer was achieved by combining it with diamond nanoparticles (NDs). The increase in the refractive index was controlled by the amount of NDs added, according to the Lorentz-Lorenz equation. The refractive index of poly(vinyl alcohol) (PVA), which was used as the base polymer, increased from 1.52 to 1.88. A multilayer film consisting of alternating layers of ND-PVA composite and poly(methyl methacrylate) exhibited ca. 80% reflectance with 10 bilayers.

Growth, Characterization and Device Development in Monocrystalline Diamond Films

DTIC Science & Technology

1988-06-01

ABSTRACT (ContMut on reverse,*i nauar and .dnr,A, A. W, -,,,I !Cu single crystals have been grown and prepared for use as a lattice matched substrate. A...literature survey of potential substrates which are both lattice and energy matched with diamond to promote two-dimensional growth has also been...first reported high resolution lattice imaging of CVD diamond. Diamond power MESFET devices have been theoretically evaluated and found to be capable

Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1995-01-01

Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.

D.C. Arcjet Diamond Deposition

NASA Astrophysics Data System (ADS)

Russell, Derrek Andrew

1995-01-01

Polycrystalline diamond films synthesized by a D.C. (direct current) arcjet device was reported for the first time in 1988. This device is capable of higher diamond growth rates than any other form of diamond CVD (chemical vapor deposition) process due to its inherent versatility with regard to the enthalpy and fluid properties of the diamond-depositing vapor. Unfortunately, the versatility of this type of device is contrasted by many difficulties such as arc stability and large heat fluxes which make applying it toward diamond deposition a difficult problem. The purpose of this work was to convert the dc arcjet, which is primarily a metallurgical device, into a commercially viable diamond CVD process. The project was divided into two parts: process development and diagnostics. The process development effort concentrated on the certain engineering challenges. Among these was a novel arcjet design that allowed the carbon-source gas to be injected downstream of the tungsten cathode while still facilitating mixture with the main gas feed. Another engineering accomplishment was the incorporation of a water -cooled substrate cooler/spinner that maintained the substrate at the proper temperature, provided the substrate with a large thermal time constant to reduce thermal shock of the diamond film, and enabled the system to achieve a four -inch diameter growth area. The process diagnostics effort concentrated on measurements aimed at developing a fundamental understanding of the properties of the plasma jet such as temperature, plasma density, Mach number, pressure at the substrate, etc. The plasma temperature was determined to be 5195 K by measuring the rotational temperature of C _2 via optical emission spectroscopy. The Mach number of the plasma jet was determined to be ~6.0 as determined by the ratio of the stagnation pressures before and after the shock wave in the plasma jet. The C_2 concentration in the plasma jet was determined to be {~10 }^{12} cm^ {-3} by

Micro-Raman Analysis of Irradiated Diamond Films

NASA Technical Reports Server (NTRS)

Newton, R. L.; Munafo, Paul M. (Technical Monitor)

2002-01-01

Owing to its unique and robust physical properties, diamond is a much sought after material for use in advanced technologies such as Microelectromechanical Systems (MEMS). The volume and weight savings promised by MEMS-based devices are of particular interest to spaceflight applications. However, much basic materials science research remains to be completed in this field. Results of micro-Raman analysis of proton (1015 - 1017 H+/cm2 doses) irradiated chemical vapor deposited (CVD) diamond reveals that the microstructure is retained even after high radiation exposure.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

PubMed Central

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

2004-01-01

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke

2015-06-07

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups thanmore » the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the

Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

NASA Astrophysics Data System (ADS)

Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

2015-05-01

Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

Multiplying Electrons With Diamond

NASA Technical Reports Server (NTRS)

2003-01-01

As researchers in the Space Communications Division of NASA s Glenn Research Center in 1992, Dr. Gerald Mearini, Dr. Isay Krainsky, and Dr. James Dayton made a secondary electron emission discovery that became the foundation for Mearini s company, GENVAC AeroSpace Corporation. Even after Mearini departed Glenn, then known as Lewis Research Center, his contact with NASA remained strong as he was awarded Small Business Innovation Research (SBIR) contracts to further develop his work. Mearini s work for NASA began with the investigation of diamond as a material for the suppression of secondary electron emissions. The results of his research were the opposite of what was expected diamond proved to be an excellent emitter rather than absorber. Mearini, Krainsky, and Dayton discovered that laboratory-grown diamond films can produce up to 45 electrons from a single incident electron. Having built an electron multiplier prototype at NASA, Mearini decided to start his own company to develop diamond structures usable in electron beam devices.

Diamond as an Optical Materials

DTIC Science & Technology

1992-02-20

method, a rotating polishing plate of iron (of low carbon content) or nickel is held at an elevated temperature inside an environmental chamber...produced the highest polishing rate and nickel produced nearly as high a polishina rate. No polishing action was observed with molybdenum plates or with...Diamond Films," Diamond Optics III, A. Feldman and S. Holly, Editors, Proc. SPIE 1325, 240-252 (1990). (9] W.D. Partlow, R.E. Witkowski, and J.P. McHugh in

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

DOE PAGES

Berman, Diana; Deshmukh, Sanket; Narayanan, Badri; ...

2016-07-04

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the processmore » can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.« less

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berman, Diana; Deshmukh, Sanket; Narayanan, Badri

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the processmore » can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.« less

Magneto-optical imaging of thin magnetic films using spins in diamond

NASA Astrophysics Data System (ADS)

Simpson, David A.; Tetienne, Jean-Philippe; McCoey, Julia M.; Ganesan, Kumaravelu; Hall, Liam T.; Petrou, Steven; Scholten, Robert E.; Hollenberg, Lloyd C. L.

2016-03-01

Imaging the fields of magnetic materials provides crucial insight into the physical and chemical processes surrounding magnetism, and has been a key ingredient in the spectacular development of magnetic data storage. Existing approaches using the magneto-optic Kerr effect, x-ray and electron microscopy have limitations that constrain further development, and there is increasing demand for imaging and characterisation of magnetic phenomena in real time with high spatial resolution. Here we show how the magneto-optical response of an array of negatively-charged nitrogen-vacancy spins in diamond can be used to image and map the sub-micron stray magnetic field patterns from thin ferromagnetic films. Using optically detected magnetic resonance, we demonstrate wide-field magnetic imaging over 100 × 100 μm2 with sub-micron spatial resolution at video frame rates, under ambient conditions. We demonstrate an all-optical spin relaxation contrast imaging approach which can image magnetic structures in the absence of an applied microwave field. Straightforward extensions promise imaging with sub-μT sensitivity and sub-optical spatial and millisecond temporal resolution. This work establishes practical diamond-based wide-field microscopy for rapid high-sensitivity characterisation and imaging of magnetic samples, with the capability for investigating magnetic phenomena such as domain wall and skyrmion dynamics and the spin Hall effect in metals.

Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Jie; Fundamental Department, Aviation University, Changchun 130022; Li Ming

2011-04-15

In this paper, a W-Ta thin-film thermocouple has been integrated on a diamond anvil cell by thin-film deposition and photolithography methods. The thermocouple was calibrated and its thermal electromotive force was studied under high pressure. The results indicate that the thermal electromotive force of the thermocouple exhibits a linear relationship with temperature and is not associated with pressure. The resistivity measurement of ZnS powders under high pressure at different temperatures shows that the phase transition pressure decreases as the temperature increases.

Hybrid photonic crystal cavity and waveguide for coupling to diamond NV-centers.

PubMed

Barclay, Paul E; Fu, Kai-Mei; Santori, Charles; Beausoleil, Raymond G

2009-06-08

A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index thin film, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity supports a mode with quality factor Q > 1.5 x 10(6) and mode volume V < 0.52(lambda/nGaP)(3), and promises to allow Purcell enhanced collection of spontaneous emission from an NV located more than 50 nm below the diamond surface. The nanowire photonic crystal waveguide can be used to efficiently couple light into and out of the cavity, or as an efficient broadband collector of NV phonon sideband emission. The proposed structures can be fabricated using existing materials and processing techniques.

Effects of hydrogenation on thermal conductivity of ultrananocrystalline diamond/amorphous carbon composite films prepared via coaxial arc plasma deposition

NASA Astrophysics Data System (ADS)

Takeichi, Satoshi; Nishiyama, Takashi; Tabara, Mitsuru; Kawawaki, Shuichi; Kohno, Masamichi; Takahashi, Koji; Yoshitake, Tsuyoshi

2018-06-01

Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) and UNCD/non-hydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared via coaxial arc plasma deposition, and their thermal conductivity and interfacial conductance in grain boundaries were measured using a time-domain thermoreflectance method. The interfacial conductance was estimated to be 1,010 and 4,892 MW/(m2·K) for UNCD/a-C:H and UNCD/a-C films, respectively. The reasons for the hydrogenated film having lower interfacial conductance than the non-hydrogenated film are 1) the reduced number of carriers that contribute to heat transport and 2) the hydrogen atoms, which are preferentially located at the grain boundaries and enhance phonon scattering.

Magnetically Orchestrated Formation of Diamond at Lower Temperatures and Pressures

NASA Astrophysics Data System (ADS)

Little, Reginald B.; Lochner, Eric; Goddard, Robert

2005-01-01

Man's curiosity and fascination with diamonds date back to ancient times. The knowledge of the many properties of diamond is recorded during Biblical times. Antoine Lavoisier determined the composition of diamond by burning in O2 to form CO2. With the then existing awareness of graphite as carbon, the race began to convert graphite to diamond. The selective chemical synthesis of diamond has been pursued by Cagniard, Hannay, Moisson and Parson. On the basis of the thermodynamically predicted equilibrium line of diamond and graphite, P W Bridgman attempted extraordinary conditions of high temperature (>2200°C) and pressure (>100,000 atm) for the allotropic conversion of graphite to diamond. H T Hall was the first to successfully form bulk diamond by realizing the kinetic restrictions to Bridgman's (thermodynamic) high pressure high temperature direct allotropic conversion. Moreover, Hall identified catalysts for the faster kinetics of diamond formation. H M Strong determined the import of the liquid catalyst during Hall's catalytic synthesis. W G Eversole discovered the slow metastable low pressure diamond formation by pyrolytic chemical vapor deposition with the molecular hydrogen etching of the rapidly forming stable graphitic carbon. J C Angus determined the import of atomic hydrogen for faster etching for faster diamond growth at low pressure. S Matsumoto has developed plasma and hot filament technology for faster hydrogen and carbon radical generations at low pressure for faster diamond formation. However the metastable low pressure chemical vapor depositions by plasma and hot filament are prone to polycrystalline films. From Bridgman to Hall to Eversole, Angus and Matsumoto, much knowledge has developed of the importance of pressure, temperature, transition metal catalyst, liquid state of metal (metal radicals atoms) and the carbon radical intermediates for diamond synthesis. Here we advance this understanding of diamond formation by demonstrating the external

Zero bias thermally stimulated currents in synthetic diamond

NASA Astrophysics Data System (ADS)

Mori, R.; Miglio, S.; Bruzzi, M.; Bogani, F.; De Sio, A.; Pace, E.

2009-06-01

Zero bias thermally stimulated currents (ZBTSCs) have been observed in single crystal high pressure high temperature (HPHT) and polycrystalline chemical vapor deposited (pCVD) diamond films. The ZBTSC technique is characterized by an increased sensitivity with respect to a standard TSC analysis. Due to the absence of the thermally activated background current, new TSC peaks have been observed in both HPHT and pCVD diamond films, related to shallow activation energies usually obscured by the emission of the dominant impurities. The ZBTSC peaks are explained in terms of defect discharge in the nonequilibrium potential distribution created by a nonuniform traps filling at the metal-diamond junctions. The electric field due to the charged defects has been estimated in a quasizero bias TSC experiment by applying an external bias.

Optimization of Cvd Diamond Coating Type on Micro Drills in Pcb Machining

NASA Astrophysics Data System (ADS)

Lei, X. L.; He, Y.; Sun, F. H.

2016-12-01

The demand for better tools for machining printed circuit boards (PCBs) is increasing due to the extensive usage of these boards in digital electronic products. This paper is aimed at optimizing coating type on micro drills in order to extend their lifetime in PCB machining. First, the tribotests involving micro crystalline diamond (MCD), nano crystalline diamond (NCD) and bare tungsten carbide (WC-Co) against PCBs show that NCD-PCB tribopair exhibits the lowest friction coefficient (0.35) due to the unique nano structure and low surface roughness of NCD films. Thereafter, the dry machining performance of the MCD- and NCD-coated micro drills on PCBs is systematically studied, using diamond-like coating (DLC) and TiAlN-coated micro drills as comparison. The experiments show that the working lives of these micro drills can be ranked as: NCD>TiAlN>DLC>MCD>bare WC-Co. The superior cutting performance of NCD-coated micro drills in terms of the lowest flank wear growth rate, no tool degradation (e.g. chipping, tool tipping) appearance, the best hole quality as well as the lowest feed force may come from the excellent wear resistance, lower friction coefficient against PCB as well as the high adhesive strength on the underneath substrate of NCD films.

Spectroscopic studies on diamond like carbon films synthesized by pulsed laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, Madhusmita; Krishnan, R., E-mail: krish@igcar.gov.in; Ravindran, T. R.

2016-05-23

Hydrogen free Diamond like Carbon (DLC) thin films enriched with C-C sp{sup 3} bonding were grown on Si (111) substrates at laser pulse energies varying from 100 to 400 mJ (DLC-100, DLC-200, DLC-300, DLC-400), by Pulsed Laser Ablation (PLA) utilizing an Nd:YAG laser operating at fundamental wavelength. Structural, optical and morphological evolutions as a function of laser pulse energy were studied by micro Raman, UV-Vis spectroscopic studies and Atomic Force Microscopy (AFM), respectively. Raman spectra analysis provided critical clues for the variation in sp{sup 3} content and optical energy gap. The sp{sup 3} content was estimated using the FWHM ofmore » the G peak and found to be in the range of 62-69%. The trend of evolution of sp{sup 3} content matches well with the evolution of I{sub D}/I{sub G} ratio with pulse energy. UV-Vis absorption study of DLC films revealed the variation of optical energy gap with laser pulse energy (1.88 – 2.23 eV), which matches well with the evolution of G-Peak position of the Raman spectra. AFM study revealed that roughness, size and density of particulate in DLC films increase with laser pulse energy.« less

Contract W911NF-12-C-0102 (Advanced Diamond Technologies, Inc.)

DTIC Science & Technology

2013-06-24

resistivity, residual stress and Raman spectra measurement is finished. Raman spectra shows basically regular nanocrystalline diamond signature as expected...diamond films including thickness, resistivity, residual stress and Raman spectra measurement is finished. Raman spectra shows basically regular...15743 WF600B05 3000 0.02 0.03 0.0018 4 Fig. 2 Raman spectra (λ=532 nm) of (a) all diamond with different doping level and (b) diamond only with

Tribological and Electrical Properties of Diamond-Like Carbon Films Deposited by Filtered Vacuum Arc Method for Medical Guidewire Application.

PubMed

Kang, Ki-Noh; Jeong, Hyejeong; Lee, Jaehyeong; Park, Yong Seob

2018-09-01

A good medical guidewires are used to introduce stents, catheters, and other medical devices inside the human body. In this study, diamond-like carbon (DLC) film was proposed to solve the poor adhesion problem of guidewire and to improve the tribological performance of guidewire. DLC films were fabricated on Si substrate by using FVA (Filtered Vacuum Arc) method. In this work, the tribological, structural, and electrical properties of the fabricated DLC films with various arc currents were experimentally investigated. All DLC films showed smooth and uniform surface with increasing applied arc current. The rms surface roughness was increased and the value of contact angle on the film surface was decreased with increasing arc current. The hardness and elastic modulus of DLC films were improved, and the resistivity value of DLC films were decreased with increasing arc current. These results are associated with ion bombardment effects by the applied arc current and bias voltage.

Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure.

PubMed

Yang, Jie; Li, Ming; Zhang, Honglin; Gao, Chunxiao

2011-04-01

In this paper, a W-Ta thin-film thermocouple has been integrated on a diamond anvil cell by thin-film deposition and photolithography methods. The thermocouple was calibrated and its thermal electromotive force was studied under high pressure. The results indicate that the thermal electromotive force of the thermocouple exhibits a linear relationship with temperature and is not associated with pressure. The resistivity measurement of ZnS powders under high pressure at different temperatures shows that the phase transition pressure decreases as the temperature increases. © 2011 American Institute of Physics

Friction and wear of hydrogenated and hydrogen-free diamond-like carbon films: Relative humidity dependent character

NASA Astrophysics Data System (ADS)

Shi, Jing; Gong, Zhenbin; Wang, Yongfu; Gao, Kaixiong; Zhang, Junyan

2017-11-01

In this study, tribological properties of hydrogenated and hydrogen free diamond-like carbon films at various relative humidity (RH) were investigated to understand the friction mechanism in the presence of water molecules. At normal load of 2N, DLC-H film's friction coefficient was 0.06 at RH14% while DLC film's friction coefficient was 0.19 at RH17%. With the increase of RH, their friction coefficient converged to about 0.15. This character remained unaltered when the normal load was 5N. Results show that low friction of DLC-H film at low RH was attributed to the low shear force aroused by graphitic tribofilm at wear care center. However, the high friction of DLC film was mainly endowed by the high adhesive force aroused by σ dangling bonds. At high RH, solid-to-solid contact was isolated by water molecules confined between the counterfaces, where capillary was a dominant factor for friction. In addition to the capillary force, the absence of tribofilm was also accountable. These two factors lead to the level off of friction coefficient for DLC-H and DLC films. Moreover, for both DLC-H and DLC films, tribo-oxidization was proved to be closely related to wear rate with the assist of H2O molecules during sliding.

Amorphous Diamond for MEMS

NASA Astrophysics Data System (ADS)

Sullivan, J. P.

2002-03-01

Pure carbon films can exhibit surprising complexity in structure and properties. Amorphous diamond (tetrahedrally-coordinated amorphous carbon) is an amorphous quasi-two phase mixture of four-fold and three-fold coordinated carbon which is produced by pulsed excimer laser deposition, an energetic deposition process that leads to film growth by sub-surface carbon implantation and the creation of local metastability in carbon bonding. Modest annealing, < 900K, produces significant irreversible strain relaxation which is thermally activated with activation energies ranging from < 1 eV to > 2 eV. During annealing the material remains amorphous, but there is a detectable increase in medium-range order as measured by fluctuation microscopy. The strain relaxation permits the residual strain in the films to be reduced to < 0.00001, which is a critical requirement for the fabrication of microelectromechanical systems (MEMS). Amorphous diamond MEMS have been fabricated in order to evaluate the mechanical properties of this material under tension and flexure, and this has enabled the determination of elastic modulus (800 GPa), tensile strength (8 GPa), and fracture toughness (8 MPa m^1/2). In addition, amorphous diamond MEMS structures have been fabricated to measure internal dissipation and surface adhesion. The high hardness and strength and hydrophobic nature of the surface makes this material particularly suitable for the fabrication of high wear resistance and low stiction MEMS. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Co., for the U.S. Dept. of Energy under contract DE-AC04-94AL85000.

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Matrix Synthesis of Graphene on a Diamond Surface and Its Simulation

NASA Astrophysics Data System (ADS)

Alekseev, N. I.

2018-07-01

A quantum-chemical simulation is performed for the transformation of the upper sublayer of carbon atoms in the lattice of single-crystal diamond into a flat graphene lattice under the influence of the atoms of a molten copper film on the diamond surface. It is established that the stable system configuration corresponds to the thermally activated motion of carbon atoms in the lower sublayer of the interface diamond layer to the position of graphene, i.e., at the same level as the atoms of the upper sublayer. The energy gain in comparison to the noninteracting subsystems of the copper and diamond atoms is approximately 0.7 eV per atom of the lower sublayer. The maximum size of the resulting graphene film is estimated and a possible mechanism for its rupture is considered.

The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

NASA Astrophysics Data System (ADS)

Zou, Y. S.; Wu, Y. F.; Yang, H.; Cang, K.; Song, G. H.; Li, Z. X.; Zhou, K.

2011-12-01

Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to -200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp3 carbon content and mechanical properties of the deposited DLC films. A maximum sp3 content of 33.3% was obtained at -100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.

Ohmic contacts to semiconducting diamond

NASA Astrophysics Data System (ADS)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Structures and Mechanical Properties of Natural and Synthetic Diamonds

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1998-01-01

A revolution in the diamond technology is in progress, as the low-pressure process becomes an industrial reality. It will soon be possible to take advantage of the demanding properties of diamond to develop a myriad of new applications, particularly for self-lubricating, wear-resistant, and superhard coatings. The production of large diamond films or sheets at low cost, a distinct possibility in the not-too-distant future, may drastically change tribology technology, particularly regarding solid lubricants and lubricating materials and systems. This paper reviews the structures and properties of natural and synthetic diamonds to gain a better understanding of the tribological properties of diamond and related materials. Atomic and crystal structure, impurities, mechanical properties, and indentation hardness of diamond are described.

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

2018-02-01

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h-1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

DOEpatents

Feng, Zhu; Brewer, Marilee; Brown, Ian; Komvopoulos, Kyriakos

1994-01-01

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

DOEpatents

Feng, Z.; Brewer, M.; Brown, I.; Komvopoulos, K.

1994-05-03

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment. 6 figures.

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

PubMed

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

Ultrahard carbon film from epitaxial two-layer graphene

NASA Astrophysics Data System (ADS)

Gao, Yang; Cao, Tengfei; Cellini, Filippo; Berger, Claire; de Heer, Walter A.; Tosatti, Erio; Riedo, Elisa; Bongiorno, Angelo

2018-02-01

Atomically thin graphene exhibits fascinating mechanical properties, although its hardness and transverse stiffness are inferior to those of diamond. So far, there has been no practical demonstration of the transformation of multilayer graphene into diamond-like ultrahard structures. Here we show that at room temperature and after nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness comparable to diamond, is resistant to perforation with a diamond indenter and shows a reversible drop in electrical conductivity upon indentation. Density functional theory calculations suggest that, upon compression, the two-layer graphene film transforms into a diamond-like film, producing both elastic deformations and sp2 to sp3 chemical changes. Experiments and calculations show that this reversible phase change is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers. Indeed, calculations show that whereas in two-layer graphene layer-stacking configuration controls the conformation of the diamond-like film, in a multilayer film it hinders the phase transformation.

Uncovering the Physical Basis Connecting Environment and Tribological Performance of Ultrananocrystalline Diamond

DTIC Science & Technology

2014-04-17

measured with an infrared pyrometer (550-3200°C). The substrates were coated with diamond nanoparticles (ITC Inc.) which serve as nucleation sites...wafers were seeded with nano-diamond particles prior to film growth to provide nucleation sites for diamond growth. To study the effect of surface...wafers are appropriate to generate uniform seeding. AFM tips were seeded with nano-diamond particles prior to coating with NCD to provide nucleation

Nature and origin of interstellar diamond from the Allende CV3 meteorite

NASA Technical Reports Server (NTRS)

Blake, David; Freund, Friedemann; Bunch, Ted; Krishnan, Kannan; Stampfer, Mitch; Chang, Sherwood; Tielens, Alexander G. G. M.

1990-01-01

Data and experimental evidence which support the contention that the C delta diamonds may result from grain-grain collisions in supernova shocks in the interstellar medium are presented. Fragments of the Allende CV3 chondrite were acid-treated. A whitish powder was obtained. For the Analytical Electron Microscopy (AEM) a small drop of ethanol suspension was transferred onto holey carbon support films on 3 mm EM grids. The AEM was performed on transmission-thin fragments of the material which overlay holes in the film, to eliminate interference from the substrate. Electron Spectroscopy for Chemical Analysis (ESCA) was performed on a large aliquot of C. Diamond was identified by selected area electron diffraction. Scanning Transmission Electron Microscope / Energy Dispersive X-ray (STEM-EDS) microanalyses of the C delta diamond, using a light-element detector, show that oxygen and possibly nitrogen are the only impurities consistently present. ESCA spectra from bulk C delta material confirm the presence of N at a level of 0.35 percent or less. Under UV irradiation a yellow-red fluorescence is observed, consistent with that of natural diamonds containing substitutional N. Electron Energy Loss Spectra (EELS) were recorded at 2 eV resolution from the C delta diamond, high pressure synthetic diamond, a diamond film produced in a low pressure plasma by chemical vapor deposition (CVD) on a heated silicon substrate (Roy, 1987), graphite, and amorphous arc sputtered carbon. Comparison of the carbon K edge shape and fine structure shows the Allende C delta phase to be largely diamond, but with a significant pre-edge absorption feature indicative of transitions of C 1s electrons into pi asterisk orbitals which are absent in the purely sp(3)-bonded diamond but present in graphite and amorphous carbon.

Deposition Of Cubic BN On Diamond Interlayers

NASA Technical Reports Server (NTRS)

Ong, Tiong P.; Shing, Yuh-Han

1994-01-01

Thin films of polycrystalline, pure, cubic boron nitride (c-BN) formed on various substrates, according to proposal, by chemical vapor deposition onto interlayers of polycrystalline diamond. Substrate materials include metals, semiconductors, and insulators. Typical substrates include metal-cutting tools: polycrystalline c-BN coats advantageous for cutting ferrous materials and for use in highly oxidizing environments-applications in which diamond coats tend to dissolve in iron or be oxidized, respectively.

Focused-ion-beam overlay-patterning of three-dimensional diamond structures for advanced single-photon properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Qianqing; Liu, Dongqi; Liu, Gangqin

2014-07-28

Sources of single photons are of fundamental importance in many applications as to provide quantum states for quantum communication and quantum information processing. Color centers in diamond are prominent candidates to generate and manipulate quantum states of light, even at room temperature. However, the efficiency of photon collection of the color centers in bulk diamond is greatly reduced by refraction at the diamond/air interface. To address this issue, diamond structuring has been investigated by various methods. Among them, focused-ion-beam (FIB) direct patterning has been recognized as the most favorable technique. But it has been noted that diamond tends to presentmore » significant challenges in FIB milling, e.g., the susceptibility of forming charging related artifacts and topographical features. In this work, periodically-positioned-rings and overlay patterning with stagger-superimposed-rings were proposed to alleviate some problems encountered in FIB milling of diamond, for improved surface morphology and shape control. Cross-scale network and uniform nanostructure arrays have been achieved in single crystalline diamond substrates. High quality diamond solid immersion lens and nanopillars were sculptured with a nitrogen-vacancy center buried at the desired position. Compared with the film counterpart, an enhancement of about ten folds in single photon collection efficiency was achieved with greatly improved signal to noise ratio. All these results indicate that FIB milling through over-lay patterning could be an effective approach to fabricate diamond structures, potentially for quantum information studies.« less

Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sankaran, K. J.; Institute for Materials Research; Sundaravel, B.

2015-08-28

In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm){sup −1}, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm{sup 2} (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of themore » UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices.« less

Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces.

PubMed

Yoshikawa, Taro; Reusch, Markus; Zuerbig, Verena; Cimalla, Volker; Lee, Kee-Han; Kurzyp, Magdalena; Arnault, Jean-Charles; Nebel, Christoph E; Ambacher, Oliver; Lebedev, Vadim

2016-11-17

Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c -axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces

PubMed Central

Yoshikawa, Taro; Reusch, Markus; Zuerbig, Verena; Cimalla, Volker; Lee, Kee-Han; Kurzyp, Magdalena; Arnault, Jean-Charles; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim

2016-01-01

Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c-axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions. PMID:28335345

Structure, adhesive strength and electrochemical performance of nitrogen doped diamond-like carbon thin films deposited via DC magnetron sputtering.

PubMed

Khun, N W; Liu, E; Krishna, M D

2010-07-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-Si (100) substrates by DC magnetron sputtering with different nitrogen flow rates at a substrate temperature of about 100 degrees C. The chemical bonding structure of the films was characterized by X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The adhesive strength and surface morphology of the films were studied using micro-scratch tester and scanning electron microscope (SEM), respectively. The electrochemical performance of the films was evaluated by potentiodynamic polarization testing and linear sweep voltammetry. The electrolytes used for the electrochemical tests were deaerated and unstirred 0.47 M KCl aqueous solution for potentiodynamic polarization testing and 0.2 M KOH and 0.1 M KCl solutions for voltammetric analysis. It was found that the DLC:N films could well passivate the underlying substrates though the corrosion resistance of the films decreased with increased nitrogen content in the films. The DLC:N films showed wide potential windows in the KOH solution, in which the detection ability of the DLC:N films to trace lead of about 1 x 10(-3) M Pb(2+) was also tested.

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants

DOE PAGES

Jurewicz, Amy J. G.; Burnett, Don S.; Rieck, Karen D.; ...

2017-07-05

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp 3–sp 2 bonds (>50%). For 27 months of exposure to space at the first We passively irradiated lagrange point, the collectors, with SW (H fluence ~2 × 10 16 ions cm -2; He fluence ~8 × 10 14 ions cm -2). The radiation damage caused by the implanted H ionsmore » peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg ( 25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 10 14 ions cm -2. Furthermore, the shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.« less

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jurewicz, Amy J. G.; Burnett, Don S.; Rieck, Karen D.

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp 3–sp 2 bonds (>50%). For 27 months of exposure to space at the first We passively irradiated lagrange point, the collectors, with SW (H fluence ~2 × 10 16 ions cm -2; He fluence ~8 × 10 14 ions cm -2). The radiation damage caused by the implanted H ionsmore » peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg ( 25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 10 14 ions cm -2. Furthermore, the shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.« less

Comparative study of the tribological behavior under hybrid lubrication of diamond-like carbon films with different adhesion interfaces

NASA Astrophysics Data System (ADS)

Costa, R. P. C.; Lima-Oliveira, D. A.; Marciano, F. R.; Lobo, A. O.; Corat, E. J.; Trava-Airoldi, V. J.

2013-11-01

This paper reports the influence of the adhesion interlayer between stainless steel and diamond-like carbon (DLC) films in two different contact conditions: in dry air and deionized water. The water was the liquid used to understand the mechanism and chemical reactions of the tribolayer formation under boundary lubrication. The effect of silicon and carbonitride adhesion interlayer was investigated on uncoated and coated DLC films. The results show that DLC/DLC pairs using carbonitride in air (30% RH) showed 60% less friction coefficient and wear less than three orders of magnitude than DLC/DLC pairs using silicon as interlayer. In deionized water, DLC/DLC pairs using carbonitride as interlayer showed 31% less friction coefficient when compared to DLC/DLC pairs with silicon. Raman related the chemical and structural changes in the DLC films during sliding in air and in the presence of water. Scratch tests showed a critical load of 14 N and 33 N in DLC films with silicon and carbonitride, respectively.

Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kukreja, Ratandeep Singh

deposition chamber. Hexagonal -- BN thin films are successfully deposited using Diborane (B2H6) (5% in H2), Ammonia (NH3) and H2 as precursor gases in the conventional MPECVD mode with and without the negative DC bias. The quality of h-BN in the films improved with pressure and when NH3 used as the first precursor gas in the deposition chamber. c-BN thin films are successfully deposited using Boron-Trifluoride (BF3) (10% in Argon (Ar)), N2, H2, Ar and Helium (He) gases in the electron cyclotron resonance (ECR) mode of the MPECVD system with negative DC bias. Up-to 66% c-BN in the films is achieved under deposition conditions of lower gas flow rates and higher deposition pressures than that reported in the literature for film deposited by ECR-MPECVD. It is shown that the percentage c-BN in the films correlates with the deposition pressure, BF3/H2 ratio and, negative DC bias during nucleation and growth. Diamond thin films are deposited using 60%Ar, 39% H2 and, 1%CH4 at 600°C, 700°C and 800°C substrate temperatures, measured by an IR pyrometer, on Si substrates pre-treated with 3-6nm diamond sol and 20-40mum diamond slurry. Raman spectroscopy, FTIR, X-Ray diffraction (XRD) and, photo-thermal reflectivity methods are used to characterize the thin films. Residual stresses observed for the diamond thin films deposited in this study are tensile in nature and increased with deposition temperature. Better quality diamond films with lower residual stresses are obtained for films deposited on Si substrate pre-treated with 3-6nm diamond sol. Preliminary results on thermal conductivity, k, suggest that k is directly dependent on the deposition temperature and independent of substrate pre-treatment signifying that the nano-seeding technique can be used to replace conventional surface activation technique for diamond seeding where needed.

Selected Bibliography II-Diamond Surface Chemistry

DTIC Science & Technology

1993-09-30

Hiraki A., Kawarada H. and Nishimura K. TITLE: "Cleaning of Surfaces of Crystalline Materials" JNL: Jpn. Kokai Tokkyo Koho REF: (1989) AUTHOR: Kimock F. M...Lett. REF: 58 (1991) 819 AUTHOR: Mori Y., I1awazadd H. an%4 hiraki A. TITLE: "Properties of Metal/Diamond Interfaces and Effects of Oxygen Adsorbed...Homoepitaxial Diamond Films by Atomic Force Microscopy" JNL: Appl. Phys. Lett. REF: 60 (1992) 1685 AUTHOR: Mori Y., Eimori N., Ma J.S., Ito T. and Hiraki A

Effect of boron doping on first-order Raman scattering in superconducting boron doped diamond films

NASA Astrophysics Data System (ADS)

Kumar, Dinesh; Chandran, Maneesh; Ramachandra Rao, M. S.

2017-05-01

Aggregation of impurity levels into an impurity band in heavily boron doped diamond results in a background continuum and discrete zone centre phonon interference during the inelastic light scattering process. In order to understand the Raman scattering effect in granular BDD films, systematically heavily doped samples in the semiconducting and superconducting regimes have been studied using the excitation wavelengths in the UV and visible regions. A comprehensive analysis of the Fano resonance effect as a function of the impurity concentrations and the excitation frequencies is presented. Various Raman modes available in BDD including signals from the grain boundaries are discussed.

HPHT growth and x-ray characterization of high-quality type IIa diamond.

PubMed

Burns, R C; Chumakov, A I; Connell, S H; Dube, D; Godfried, H P; Hansen, J O; Härtwig, J; Hoszowska, J; Masiello, F; Mkhonza, L; Rebak, M; Rommevaux, A; Setshedi, R; Van Vaerenbergh, P

2009-09-09

The trend in synchrotron radiation (x-rays) is towards higher brilliance. This may lead to a very high power density, of the order of hundreds of watts per square millimetre at the x-ray optical elements. These elements are, typically, windows, polarizers, filters and monochromators. The preferred material for Bragg diffracting optical elements at present is silicon, which can be grown to a very high crystal perfection and workable size as well as rather easily processed to the required surface quality. This allows x-ray optical elements to be built with a sufficient degree of lattice perfection and crystal processing that they may preserve transversal coherence in the x-ray beam. This is important for the new techniques which include phase-sensitive imaging experiments like holo-tomography, x-ray photon correlation spectroscopy, coherent diffraction imaging and nanofocusing. Diamond has a lower absorption coefficient than silicon, a better thermal conductivity and lower thermal expansion coefficient which would make it the preferred material if the crystal perfection (bulk and surface) could be improved. Synthetic HPHT-grown (high pressure, high temperature) type Ib material can readily be produced in the necessary sizes of 4-8 mm square and with a nitrogen content of typically a few hundred parts per million. This material has applications in the less demanding roles such as phase plates: however, in a coherence-preserving beamline, where all elements must be of the same high quality, its quality is far from sufficient. Advances in HPHT synthesis methods have allowed the growth of type IIa diamond crystals of the same size as type Ib, but with substantially lower nitrogen content. Characterization of this high purity type IIa material has been carried out with the result that the crystalline (bulk) perfection of some of the HPHT-grown materials is approaching the quality required for the more demanding applications such as imaging applications and imaging

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films - Coating characterization and first cell biological results.

PubMed

Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

2016-02-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD>HAp/B-NCD>uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

EDC-mediated DNA attachment to nanocrystalline CVD diamond films.

PubMed

Christiaens, P; Vermeeren, V; Wenmackers, S; Daenen, M; Haenen, K; Nesládek, M; vandeVen, M; Ameloot, M; Michiels, L; Wagner, P

2006-08-15

Chemical vapour deposited (CVD) diamond is a very promising material for biosensor fabrication owing both to its chemical inertness and the ability to make it electrical semiconducting that allows for connection with integrated circuits. For biosensor construction, a biochemical method to immobilize nucleic acids to a diamond surface has been developed. Nanocrystalline diamond is grown using microwave plasma-enhanced chemical vapour deposition (MPECVD). After hydrogenation of the surface, 10-undecenoic acid, an omega-unsaturated fatty acid, is tethered by 254 nm photochemical attachment. This is followed by 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide (EDC)-mediated attachment of amino (NH(2))-modified dsDNA. The functionality of the covalently bound dsDNA molecules is confirmed by fluorescence measurements, PCR and gel electrophoresis during 35 denaturation and rehybridisation steps. The linking method after the fatty acid attachment can easily be applied to other biomolecules like antibodies and enzymes.

Structural and optical properties of gold-incorporated diamond-like carbon thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Majeed, Shahbaz; Siraj, K.; Naseem, S.; Khan, Muhammad F.; Irshad, M.; Faiz, H.; Mahmood, A.

2017-07-01

Pure and gold-doped diamond-like carbon (Au-DLC) thin films are deposited at room temperature by using RF magnetron sputtering in an argon gas-filled chamber with a constant flow rate of 100 sccm and sputtering time of 30 min for all DLC thin films. Single-crystal silicon (1 0 0) substrates are used for the deposition of pristine and Au-DLC thin films. Graphite (99.99%) and gold (99.99%) are used as co-sputtering targets in the sputtering chamber. The optical properties and structure of Au-DLC thin films are studied with the variation of gold concentration from 1%-5%. Raman spectroscopy, atomic force microscopy (AFM), Vickers hardness measurement (VHM), and spectroscopic ellipsometry are used to analyze these thin films. Raman spectroscopy indicates increased graphitic behavior and reduction in the internal stresses of Au-DLC thin films as the function of increasing gold doping. AFM is used for surface topography, which shows that spherical-like particles are formed on the surface, which agglomerate and form larger clusters on the surface by increasing the gold content. Spectroscopy ellipsometry analysis elucidates that the refractive index and extinction coefficient are inversely related and the optical bandgap energy is decreased with increasing gold content. VHM shows that gold doping reduces the hardness of thin films, which is attributed to the increase in sp2-hybridization.

Structures and Mechanical Properties of Natural and Synthetic Diamonds. Chapter 8

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1998-01-01

A revolution in diamond technology is in progress as the low-pressure process becomes an industrial reality. It will soon be possible to take advantage of the demanding properties of diamond to develop a myriad of new applications, particularly for self-lubricating, wear, and superhard coatings. The production of large diamond films or sheets at low cost, a distinct possibility in the not-too-distant future, may drastically change tribology technology, particularly solid lubricants and lubricating materials and systems. This chapter reviews the structures and properties of natural and synthetic diamond to gain a better understanding of the tribological properties of diamond and related materials to be described in the following chapters. Atomic and crystal structure, impurities, mechanical properties, and indentation hardness of diamond are described.

Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

NASA Astrophysics Data System (ADS)

Ballinger, Jared

Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase

Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

NASA Astrophysics Data System (ADS)

Xu, Yi; Li, Liuhe; Luo, Sida; Lu, Qiuyuan; Gu, Jiabin; Lei, Ning; Huo, Chunqin

2017-01-01

Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

Effects of protein inter-layers on cell-diamond FET characteristics.

PubMed

Rezek, Bohuslav; Krátká, Marie; Kromka, Alexander; Kalbacova, Marie

2010-12-15

Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors (FET) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated FETs based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum (FBS) proteins and osteoblastic SAOS-2 cells on diamond electronic properties. FBS proteins adsorbed on the diamond FETs permanently decrease diamond conductivity as reflected by the -45 mV shift of the FET transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 mV. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the FBS proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface. Copyright © 2010 Elsevier B.V. All rights reserved.

Nanocrystalline diamond thin films on titanium-6 aluminum-4 vanadium alloy temporomandibular joint prosthesis simulants by microwave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fries, Marc Douglas

A course of research has been performed to assess the suitability of nanocrystal-line diamond (NCD) films on Ti-6Al-4V alloy as wear-resistant coatings in biomedical implant use. A series of temporomandibular (TMJ) joint condyle simulants were polished and acid-passivated as per ASTM F86 standard for surface preparation of implants. A 3-mum-thick coating of NCD film was deposited by microwave plasma chemical vapor deposition (MPCVD) over the hemispherical articulation surfaces of the simulants. Plasma chemistry conditions were measured and monitored by optical emission spectroscopy (OES), using hydrogen as a relative standard. The films consist of diamond grains around 20 nm in diameter embedded in an amorphous carbon matrix, free of any detectable film stress gradient. Hardness averages 65 GPa and modulus measures 600 GPa at a depth of 250 nm into the film surface. A diffuse film/substrate boundary produces a minimal film adhesion toughness (GammaC) of 158 J/m2. The mean RMS roughness is 14.6 +/- 4.2 nm, with an average peak roughness of 82.6 +/- 65.9 nm. Examination of the surface morphology reveals a porous, dendritic surface. Wear testing resulted in two failed condylar coatings out of three tests. No macroscopic delamination was found on any sample, but micron-scale film pieces broke away, exposing the substrate. Electrochemical corrosion testing shows a seven-fold reduction in corrosion rate with the application of an NCD coating as opposed to polished, passivated Ti-6Al-4V, producing a corrosion rate comparable to wrought Co-Cr-Mo. In vivo biocompatibility testing indicates that implanted NCD films did not elicit an immune response in the rabbit model, and osteointegration was apparent for both compact and trabecular bone on both NCD film and bare Ti-6Al-4V. Overall, NCD thin film material is reasonably smooth, biocompatible, and very well adhered. Wear testing indicates that this material is unacceptable for use in demanding TMJ applications without

Process for ultra smooth diamond coating on metals and uses thereof

NASA Technical Reports Server (NTRS)

Vohra, Yogesh K. (Inventor); Catledge, Shane A. (Inventor)

2001-01-01

The present invention provides a new process to deposit well adhered ultra smooth diamond films on metals by adding nitrogen gas to the methane/hydrogen plasma created by a microwave discharge. Such diamond coating process is useful in tribological/wear resistant applications in bio-implants, machine tools, and magnetic recording industry.

Thermal conductance of metal–diamond interfaces at high pressure

DOE PAGES

Hohensee, Gregory T.; Wilson, R. B.; Cahill, David G.

2015-03-06

The thermal conductance of interfaces between metals and diamond, which has a comparatively high Debye temperature, is often greater than can be accounted for by two phonon-processes. The high pressures achievable in a diamond anvil cell can significantly extend the metal phonon density of states to higher frequencies, and can also suppress extrinsic effects by greatly stiffening interface bonding. Here we report time-domain thermoreflectance measurements of metal-diamond interface thermal conductance up to 50 GPa in the DAC for Pb, Au 0.95Pd 0.05, Pt, and Al films deposited on Type 1A natural [100] and Type 2A synthetic [110] diamond anvils. Inmore » all cases, the thermal conductances increase weakly or saturate to similar values at high pressure. Lastly, our results suggest that anharmonic conductance at metal-diamond interfaces is controlled by partial transmission processes, where a diamond phonon that inelastically scatters at the interface absorbs or emits a metal phonon.« less

Numerical Prediction of the Influence of Process Parameters on Large Area Diamond Deposition by DC Arcjet with ARC Roots Rotating and Operating at Gas Recycling Mode

NASA Astrophysics Data System (ADS)

Lu, F. X.; Huang, T. B.; Tang, W. Z.; Song, J. H.; Tong, Y. M.

A computer model have been set up for simulation of the flow and temperature field, and the radial distribution of atomic hydrogen and active carbonaceous species over a large area substrate surface for a new type dc arc plasma torch with rotating arc roots and operating at gas recycling mode A gas recycling radio of 90% was assumed. In numerical calculation of plasma chemistry, the Thermal-Calc program and a powerful thermodynamic database were employed. Numerical calculations to the computer model were performed using boundary conditions close to the experimental setup for large area diamond films deposition. The results showed that the flow and temperature field over substrate surface of Φ60-100mm were smooth and uniform. Calculations were also made with plasma of the same geometry but no arc roots rotation. It was clearly demonstrated that the design of rotating arc roots was advantageous for high quality uniform deposition of large area diamond films. Theoretical predictions on growth rate and film quality as well as their radial uniformity, and the influence of process parameters on large area diamond deposition were discussed in detail based on the spatial distribution of atomic hydrogen and the carbonaceous species in the plasma over the substrate surface obtained from thermodynamic calculations of plasma chemistry, and were compared with experimental observations.

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE PAGES

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...

2017-03-27

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Effect of nitrogen on the growth of boron doped single crystal diamond

DOE PAGES

Karna, Sunil; Vohra, Yogesh

2013-11-18

Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

Role of deuterium desorption kinetics on the thermionic emission properties of polycrystalline diamond films with respect to kinetic isotope effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paxton, W. F., E-mail: william.f.paxton@vanderbilt.edu; Howell, M.; Kang, W. P.

2014-06-21

The desorption kinetics of deuterium from polycrystalline chemical vapor deposited diamond films were characterized by monitoring the isothermal thermionic emission current behavior. The reaction was observed to follow a first-order trend as evidenced by the decay rate of the thermionic emission current over time which is in agreement with previously reported studies. However, an Arrhenius plot of the reaction rates at each tested temperature did not exhibit the typical linear behavior which appears to contradict past observations of the hydrogen (or deuterium) desorption reaction from diamond. This observed deviation from linearity, specifically at lower temperatures, has been attributed to non-classicalmore » processes. Though no known previous studies reported similar deviations, a reanalysis of the data obtained in the present study was performed to account for tunneling which appeared to add merit to this hypothesis. Additional investigations were performed by reevaluating previously reported data involving the desorption of hydrogen (as opposed to deuterium) from diamond which further indicated this reaction to be dominated by tunneling at the temperatures tested in this study (<775 °C). An activation energy of 3.19 eV and a pre-exponential constant of 2.3 × 10{sup 12} s{sup −1} were determined for the desorption reaction of deuterium from diamond which is in agreement with previously reported studies.« less

Diamond and Carbon Nanotube Composites for Supercapacitor Devices

NASA Astrophysics Data System (ADS)

Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

2017-02-01

We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz.

PubMed

Sorokin, B P; Kvashnin, G M; Novoselov, A S; Bormashov, V S; Golovanov, A V; Burkov, S I; Blank, V D

2017-07-01

First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·10 14 Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. Copyright © 2017 Elsevier B.V. All rights reserved.

Diamond For Optical Material

NASA Astrophysics Data System (ADS)

Clay, Robert D.; Clay, John P.

1984-12-01

Clay Engineering Inc. currently has a proposal before DARPA to manufacture large optical quality diamond for use as optical material. The manufactured diamond will be approximately 100 mm in diameter by 100 mm long. The cost of producing the diamond is expected to be three dollars per carat. It is expected that total impurities of a few parts per billion can readily be obtained. A study of diamond is a study of the effects of impurities. The elements boron and nitrogen can replace carbon atoms in the lattice structure, making diamond a "P" or "N" type semiconductor. Diamonds which are not semiconductors are classified as type IIa. The presence of B or N in the lattice causes diamond to photoconduct in ultraviolet light. All type I and III) and most type IIa diamonds photoconduct. The manufactured diamond will not photoconduct and will have an electrical resistivity greater than 1018 ohm*m. All non-lattice impurities are in the form of inclusions which dramatically affect the mechanical properties of diamond. High purity diamond has a coefficient of absorption of order 10-3 cm-1 at wavelengths of 8 to 12 micro metres, which makes it useful for infrared applications. It also has a low coefficient of absorption at wavelengths greater than 12 micro metres. For missile and aircraft applications, diamond is relatively immune to erosion or pitting damage by sand and rain. Diamond will readily withstand the stagnation temperature of Mach 3 flight and will go to Mach 4.8 with an anti-reflective coating to protect it from oxygen attack. Diamond is highly resistant to thermal shock, which makes it valuable for high energy laser applications. Using R = St (1-)) k/Ea as a measure of thermal shock resistance, diamond is 107 w/m vs "sapphire" and Zerodur at 104 and fused quartz at 1.45x103. Diamond does not perform well in the 2.5-7.5 micro metres and less than 0.4 micro metres wavelengths. Intense beams of less than 0.4 micro metres energy can create color centers in diamond

The activation energy for nanocrystalline diamond films deposited from an Ar/H2/CH4 hot-filament reactor.

PubMed

Barbosa, D C; Melo, L L; Trava-Airoldi, V J; Corat, E J

2009-06-01

In this work we have investigated the effect of substrate temperature on the growth rate and properties of nanocrystalline diamond thin films deposited by hot filament chemical vapor deposition (HFCVD). Mixtures of 0.5 vol% CH4 and 25 vol% H2 balanced with Ar at a pressure of 50 Torr and typical deposition time of 12 h. We present the measurement of the activation energy by accurately controlling the substrate temperature independently of other CVD parameters. Growth rates have been measured in the temperature range from 550 to 800 degrees C. Characterization techniques have involved Raman spectroscopy, high resolution X-ray difractometry and scanning electron microscopy. We also present a comparison with most activation energy for micro and nanocrystalline diamond determinations in the literature and propose that there is a common trend in most observations. The result obtained can be an evidence that the growth mechanism of NCD in HFCVD reactors is very similar to MCD growth.

Equilibrium, chemical kinetic, and transport limitations to diamond growth

NASA Astrophysics Data System (ADS)

Evans, Edward Anthony

Because of their extreme properties, diamond films have found some industrial applications, i.e., heat sinks and tool coatings. However, to increase their economic attractiveness, the growth rate must be increased, the deposition temperature must be lowered, and single crystal films must be achieved. We have studied two types of chemical vapor deposition systems, hot-filament and microwave assisted, in order to understand the factors limiting diamond growth rate. From simultaneous microbalance growth rate measurements and mass spectrometer measurements, changes in growth rate are correlated with changes in gas phase composition. Measured reaction orders support the proposal that diamond growth occurs through a single-carbon-atom species, e.g., CHsb3. When a two-carbon atom source gas is used, it is likely that the dissociation to two, single-carbon atom species occurs on the substrate surface (dissociative adsorption). Furthermore, a shift to zero-order suggests that the diamond growth is a surface-site limited process at higher hydrocarbon concentrations. The diamond growth rate maximum with pressure is explained by transport limitations of species within the reaction zone. The reported diamond growth rates in the hot-filament reactor are several times higher than those reported by other research groups. These higher growth rates result from surrounding the substrate with the filament. We have used the measured growth rates, filament temperatures, and thermocouple measurements to calculate activation energies for diamond growth. When the filament temperature is used for the calculation, an activation energy of 73 kcal per mole is obtained; however, based on estimated substrate temperatures, an activation energy of 18 kcal per mole is determined. A dimensional analysis approach was developed to select the most important gas phase reactions occurring during diamond CVD. Steady-state analysis of these reactions and the application of mass transport equations lead to

In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

PubMed

Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

2016-01-01

Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo. © 2015 Wiley Periodicals, Inc.

Locally Resolved Electron Emission Area and Unified View of Field Emission from Ultrananocrystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, Oksana; Baturin, Stanislav S.; Kovi, Kiran K.

One of the common problems in case of field emission from polycrystalline diamond films, which typically have uniform surface morphology, is uncertainty in determining exact location of electron emission sites across the surface. Although several studies have suggested that grain boundaries are the main electron emission source, it is not particularly clear what makes some sites emit more than the others. It is also practically unclear how one could quantify the actual electron emission area and therefore field emission current per unit area. In this paper we study the effect of actual, locally resolved, field emission (FE) area on electronmore » emission characteristics of uniform planar highly conductive nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) field emitters. It was routinely found that field emission from as-grown planar (N)UNCD films is always confined to a counted number of discrete emitting centers across the surface which varied in size and electron emissivity. It was established that the actual FE area critically depends on the applied electric field, as well as that the actual FE area and the overall electron emissivity improve with sp2 fraction present in the film irrespectively of the original substrate roughness and morphology. To quantify the actual FE area and its dependence on the applied electric field, imaging experiments were carried out in a vacuum system in a parallel-plate configuration with a specialty anode phosphor screen. Electron emission micrographs were taken concurrently with I-V characteristics measurements. In addition, a novel automated image processing algorithm was developed to process extensive imaging datasets and calculate emission area per image. By doing so, it was determined that the emitting area was always significantly smaller than the FE cathode surface area. Namely, the actual FE area would change from 5×10-3 % to 1.5 % of the total cathode area with the applied electric field increased. Finally

Method for machining steel with diamond tools

DOEpatents

Casstevens, J.M.

1984-01-01

The present invention is directed to a method for machine optical quality finishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

Method for machining steel with diamond tools

DOEpatents

Casstevens, John M.

1986-01-01

The present invention is directed to a method for machining optical quality inishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

A new tubular hot-wire CVD for diamond coating

NASA Astrophysics Data System (ADS)

Motahari, Hamid; Bellah, Samad Moemen; Malekfar, Rasoul

2017-06-01

A new tubular hot-wire chemical vapor deposition (HWCVD) system using a tubular quartz vacuum chamber has been fabricated. The filaments in this system can heat the substrate and act as a gas activator and thermally activator for gas species at the same time. The nano- and microcrystalline diamond coatings on the surface of steel AISI 316 substrates have been grown. To assess the results, SEM and FESEM images and Raman spectroscopy investigations have been applied. The results reveal that micro- and nanocrystalline diamond structures have been formed in the coatings, but the disordered diamond and some non-diamond phases, such as graphitic carbons, are also present in the coating layers. The analytical measurements show the growth of diamond films with well-faceted crystals in (111) direction. However, intrinsic stress, secondary nucleation, and poor adhesion are the main issues of future research for this new designed HWCVD.

Structural and electrical properties of conducting diamond nanowires.

PubMed

Sankaran, Kamatchi Jothiramalingam; Lin, Yen-Fu; Jian, Wen-Bin; Chen, Huang-Chin; Panda, Kalpataru; Sundaravel, Balakrishnan; Dong, Chung-Li; Tai, Nyan-Hwa; Lin, I-Nan

2013-02-01

Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.

Surface functionalization of thin-film diamond for highly stable and selective biological interfaces

PubMed Central

Stavis, Courtney; Clare, Tami Lasseter; Butler, James E.; Radadia, Adarsh D.; Carr, Rogan; Zeng, Hongjun; King, William P.; Carlisle, John A.; Aksimentiev, Aleksei; Bashir, Rashid; Hamers, Robert J.

2011-01-01

Carbon is an extremely versatile family of materials with a wide range of mechanical, optical, and mechanical properties, but many similarities in surface chemistry. As one of the most chemically stable materials known, carbon provides an outstanding platform for the development of highly tunable molecular and biomolecular interfaces. Photochemical grafting of alkenes has emerged as an attractive method for functionalizing surfaces of diamond, but many aspects of the surface chemistry and impact on biological recognition processes remain unexplored. Here we report investigations of the interaction of functionalized diamond surfaces with proteins and biological cells using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and fluorescence methods. XPS data show that functionalization of diamond with short ethylene glycol oligomers reduces the nonspecific binding of fibrinogen below the detection limit of XPS, estimated as > 97% reduction over H-terminated diamond. Measurements of different forms of diamond with different roughness are used to explore the influence of roughness on nonspecific binding onto H-terminated and ethylene glycol (EG)-terminated surfaces. Finally, we use XPS to characterize the chemical stability of Escherichia coli K12 antibodies on the surfaces of diamond and amine-functionalized glass. Our results show that antibody-modified diamond surfaces exhibit increased stability in XPS and that this is accompanied by retention of biological activity in cell-capture measurements. Our results demonstrate that surface chemistry on diamond and other carbon-based materials provides an excellent platform for biomolecular interfaces with high stability and high selectivity. PMID:20884854

Status of the R&D activity on diamond particle detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Bellini, B.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Karl, C.; Kass, R.; Keil, M.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Perera, L.; Pernicka, M.; Polesello, P.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2003-09-01

Chemical Vapor Deposited (CVD) polycrystalline diamond has been proposed as a radiation-hard alternative to silicon in the extreme radiation levels occurring close to the interaction region of the Large Hadron Collider. Due to an intense research effort, reliable high-quality polycrystalline CVD diamond detectors, with up to 270 μm charge collection distance and good spatial uniformity, are now available. The most recent progress on the diamond quality, on the development of diamond trackers and on radiation hardness studies are presented and discussed.

Waferscale nanophotonic circuits made from diamond-on-insulator substrates.

PubMed

Rath, P; Gruhler, N; Khasminskaya, S; Nebel, C; Wild, C; Pernice, W H P

2013-05-06

Wide bandgap dielectrics are attractive materials for the fabrication of photonic devices because they allow broadband optical operation and do not suffer from free-carrier absorption. Here we show that polycrystalline diamond thin films deposited by chemical vapor deposition provide a promising platform for the realization of large scale integrated photonic circuits. We present a full suite of photonic components required for the investigation of on-chip devices, including input grating couplers, millimeter long nanophotonic waveguides and microcavities. In microring resonators we measure loaded optical quality factors up to 11,000. Corresponding propagation loss of 5 dB/mm is also confirmed by measuring transmission through long waveguides.

Diagnostics of capacitively-coupled hydrocarbon plasmas for deposition of diamond-like carbon films using quadrupole mass spectrometry and Langmuir probe

NASA Astrophysics Data System (ADS)

Oda, Akinori; Fukai, Shun; Kousaka, Hiroyuki; Ohta, Takayuki

2015-09-01

Diamond-like carbon (DLC) films are the hydrogenated amorphous carbon films, which contains a mixture of sp2- and sp3-bonded carbon. The DLC films have been widely used for various applications, such as automotive, semiconductors, medical devices, since have excellent material properties in lower friction, higher chemical stability, higher hardness, higher wear resistance. Until now, numerous investigations on the DLC films using plasma assisted chemical vapor deposition have been done. For precise control of coating technique of DLC films, it is enormously important to clarify the fundamental properties in hydrocarbon plasmas, as a source of hydrocarbon ions and radicals. In this paper, the fundamental properties in a low pressure radio-frequency hydrocarbon (Ar/CH4 (1 %) gas mixture) plasmas have been diagnosed using a quadrupole mass spectrometer (HIDEN ANARYTICAL Ltd., EQP-300) and Langmuir probe system (HIDEN ANARYTICAL Ltd., ESPion). This work was partly supported by KAKENHI (No.26420247), and a ``Grant for Advanced Industrial Technology Development (No.11B06004d)'' in 2011 from the New Energy and Industrial Technology Development Organization (NEDO) of Japan.

Absolute age Determinations on Diamond by Radioisotopic Methods: NOT the way to Accurately Identify Diamond Provenance

NASA Astrophysics Data System (ADS)

Shirey, S. B.

2002-05-01

Gem-quality diamond contains such low abundances of parent-daughter radionuclides that dating the diamond lattice directly by isotopic measurements has been and will be impossible. Absolute ages on diamonds typically are obtained through measurements of their syngenetic mineral inclusions: Rb-Sr in garnet; Sm-Nd in garnet and pyroxene; Re-Os and U-Th-Pb in sulfide; K-Ar in pyroxene; and U-Pb in zircon. The application of the first two isotope schemes in the list requires putting together many inclusions from many diamonds whereas the latter isotope schemes permit ages on single diamonds. The key limitations on the application of these decay pairs are the availability and size of the inclusions, the abundance levels of the radionuclides, and instrumental sensitivity. Practical complications of radioisotope dating of inclusions are fatal to the application of the technique for diamond provenance. In all mines, the ratio of gem-quality diamonds to stones with datable inclusions is very high. Thus there is no way to date the valuable, marketable stones that are part of the conflict diamond problem, just their rare, flawed cousins. Each analysis destroys the diamond host plus the inclusion and can only be carried out in research labs by highly trained scientists. Thus, these methods can not be automated or applied to the bulk of diamond production. The geological problems with age dating are equally fatal to its application to diamond provenance. From the geological perspective, for age determination to work as a tool for diamond provenance studies, diamond ages would have to be specific to particular kimberlites or kimberlite fields and different between fields. The southern African Kaapvaal-Zimbabwe Craton and Limpopo Mobile Belt is the only cratonic region where age determinations have been applied on a large enough scale to a number of kimberlites to illustrate the geological problems in age measurements for diamond provenance. However, this southern African example