Study of a Flexible Low Profile Tunable Dipole Antenna Using Barium Strontium Titanate Varactors

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas; Miranda, Felix A.

2014-01-01

In this paper a flexible low profile dipole antenna using a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells is presented. The varactor chips were placed only along one dimension of the FSS to avoid the use of vias and simplify the DC bias network. The antenna uses overlapping metallic plates that resemble fish scales as a ground plane to improve the flexibility of the multi-material stack structure. The measured data of the antenna demonstrate tunability from 2.42 GHz to 2.66 GHz and 1.3 dB gain drop when using overlapping metallic plates instead of continuous ground plane. The total antenna thickness is approximately lambda/24.

Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor

NASA Astrophysics Data System (ADS)

Ferng, Yi-Cherng; Chang, Liann-Be; Das, Atanu; Lin, Ching-Chi; Cheng, Chun-Yu; Kuei, Ping-Yu; Chow, Lee

2012-12-01

In this paper, a varactor with metal-semiconductor-metal diodes on top of the (NH4)2S/P2S5-treated AlGaN/GaN two-dimensional electron gas epitaxial structure (MSM-2DEG) is proposed to the surge protection for the first time. The sulfur-treated MSM-2DEG varactor properties, including current-voltage (I-V), capacitance-voltage (C-V), and frequency response of the proposed surge protection circuit, are presented. To verify its capability of surge protection, we replace the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit with the sulfur-treated MSM-2DEG varactor under the application conditions of system-level surge tests. The measured results show that the proposed surge protection circuit, consisted of a gas discharge arrester (GDA) and a sulfur-treated MSM-2DEG varactor, can suppress an electromagnetic pulse (EMP) voltage of 4000 to 360 V, a reduction of 91%, whereas suppression is to 1780 V, a reduction of 55%, when using only a GDA.

A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, T.C.; Chen, Seng Woon; Pande, K.

1993-12-01

A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. This paper presents the design, fabrication, and performance of this W-band integrated power module. Measured results of the complete integrated power module show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency doubling technologies. This integrated power module ismore » suitable for the future 94 GHz missile seeker applications.« less

Trajectory-based understanding of the quantum-classical transition for barrier scattering

NASA Astrophysics Data System (ADS)

Chou, Chia-Chun

2018-06-01

The quantum-classical transition of wave packet barrier scattering is investigated using a hydrodynamic description in the framework of a nonlinear Schrödinger equation. The nonlinear equation provides a continuous description for the quantum-classical transition of physical systems by introducing a degree of quantumness. Based on the transition equation, the transition trajectory formalism is developed to establish the connection between classical and quantum trajectories. The quantum-classical transition is then analyzed for the scattering of a Gaussian wave packet from an Eckart barrier and the decay of a metastable state. Computational results for the evolution of the wave packet and the transmission probabilities indicate that classical results are recovered when the degree of quantumness tends to zero. Classical trajectories are in excellent agreement with the transition trajectories in the classical limit, except in some regions where transition trajectories cannot cross because of the single-valuedness of the transition wave function. As the computational results demonstrate, the process that the Planck constant tends to zero is equivalent to the gradual removal of quantum effects originating from the quantum potential. This study provides an insightful trajectory interpretation for the quantum-classical transition of wave packet barrier scattering.

Barrier versus tilt exchange gate operations in spin-based quantum computing

NASA Astrophysics Data System (ADS)

Shim, Yun-Pil; Tahan, Charles

2018-04-01

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered, and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-based gate operations.

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Aiting; Vijayraghavan, Karun; Belkin, Mikhail A., E-mail: mbelkin@ece.utexas.edu

2014-04-28

We report an experimental study of terahertz quantum cascade lasers with variable barrier heights based on the Al{sub x}Ga{sub 1–x}As/GaAs material system. Two new designs are developed based on semiclassical ensemble Monte Carlo simulations using state-of-the-art Al{sub 0.15}Ga{sub 0.85}As/GaAs three-quantum-well resonant phonon depopulation active region design as a reference. The new designs achieved maximum lasing temperatures of 188 K and 172 K, as compared to the maximum lasing temperature of 191 K for the reference structure. These results demonstrate that terahertz quantum cascade laser designs with variable barrier heights provide a viable alternative to the traditional active region designs with fixed barrier composition.more » Additional design space offered by using variable barriers may lead to future improvements in the terahertz quantum cascade laser performance.« less

Perfect Spin Filter by Periodic Drive of a Ferromagnetic Quantum Barrier

NASA Astrophysics Data System (ADS)

Thuberg, Daniel; Muñoz, Enrique; Eggert, Sebastian; Reyes, Sebastián A.

2017-12-01

We consider the problem of particle tunneling through a periodically driven ferromagnetic quantum barrier connected to two leads. The barrier is modeled by an impurity site representing a ferromagnetic layer or a quantum dot in a tight-binding Hamiltonian with a local magnetic field and an ac-driven potential, which is solved using the Floquet formalism. The repulsive interactions in the quantum barrier are also taken into account. Our results show that the time-periodic potential causes sharp resonances of perfect transmission and reflection, which can be tuned by the frequency, the driving strength, and the magnetic field. We demonstrate that a device based on this configuration could act as a highly tunable spin valve for spintronic applications.

Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

PubMed Central

Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

2016-01-01

The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

NASA Astrophysics Data System (ADS)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

Si/SiGe quadruple quantum dots with direct barrier gates

NASA Astrophysics Data System (ADS)

Ward, Daniel; Gamble, John; Foote, Ryan; Savage, Donald; Lagally, Max; Coppersmith, Susan; Eriksson, Mark

2014-03-01

We have fabricated a quadruple quantum dot in a Si/SiGe heterostructure with the aim of demonstrating a two-qubit quantum gate. This device makes use of direct barrier gates, in which individual gates are placed directly over the quantum dots and tunnel barriers. This design enables rational control of both energies and tunnel rates in coupled quantum dots. In this talk we discuss the design, fabrication, and initial characterization of the device. This work was supported in part by ARO (W911NF-12-0607), NSF (DMR-1206915), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Quantum finance Hamiltonian for coupon bond European and barrier options.

PubMed

Baaquie, Belal E

2008-03-01

Coupon bond European and barrier options are financial derivatives that can be analyzed in the Hamiltonian formulation of quantum finance. Forward interest rates are modeled as a two-dimensional quantum field theory and its Hamiltonian and state space is defined. European and barrier options are realized as transition amplitudes of the time integrated Hamiltonian operator. The double barrier option for a financial instrument is "knocked out" (terminated with zero value) if the price of the underlying instrument exceeds or falls below preset limits; the barrier option is realized by imposing boundary conditions on the eigenfunctions of the forward interest rates' Hamiltonian. The price of the European coupon bond option and the zero coupon bond barrier option are calculated. It is shown that, is general, the constraint function for a coupon bond barrier option can -- to a good approximation -- be linearized. A calculation using an overcomplete set of eigenfunctions yields an approximate price for the coupon bond barrier option, which is given in the form of an integral of a factor that results from the barrier condition times another factor that arises from the payoff function.

Quantum mechanical streamlines. I - Square potential barrier

NASA Technical Reports Server (NTRS)

Hirschfelder, J. O.; Christoph, A. C.; Palke, W. E.

1974-01-01

Exact numerical calculations are made for scattering of quantum mechanical particles hitting a square two-dimensional potential barrier (an exact analog of the Goos-Haenchen optical experiments). Quantum mechanical streamlines are plotted and found to be smooth and continuous, to have continuous first derivatives even through the classical forbidden region, and to form quantized vortices around each of the nodal points. A comparison is made between the present numerical calculations and the stationary wave approximation, and good agreement is found between both the Goos-Haenchen shifts and the reflection coefficients. The time-independent Schroedinger equation for real wavefunctions is reduced to solving a nonlinear first-order partial differential equation, leading to a generalization of the Prager-Hirschfelder perturbation scheme. Implications of the hydrodynamical formulation of quantum mechanics are discussed, and cases are cited where quantum and classical mechanical motions are identical.

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

DOEpatents

Forrest, Stephen R.

2008-08-19

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Recombination processes in quantum well lasers with superlattice barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Foxon, C.T.

1989-12-04

Spontaneous emission spectra from GaAs quantum well lasers grown by molecular beam epitaxy show that the radiative recombination rate in (AlAs)(GaAs) superlattice barriers is greater than in alloy barriers of the same average composition ({ital x}=0.25) due to reduction in effective gap by superlattice effects. Measurements of emission spectra as functions of temperature show that these radiative processes account for a significant part of the temperature variation of the threshold current and we estimate that the nonradiative lifetime in the superlattice barriers is an order of magnitude longer than in alloy barriers grown under similar conditions.

Varactor with integrated micro-discharge source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Manginell, Ronald P.; Moorman, Matthew W.

2016-10-18

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of themore » np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).« less

A 5GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit

NASA Astrophysics Data System (ADS)

Ta, Tuan Thanh; Kameda, Suguru; Takagi, Tadashi; Tsubouchi, Kazuo

In this paper, a fully integrated 5GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1GHz to 6.1GHz (relative value of 17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

Ultra-wideband tunable resonator based on varactor-loaded complementary split-ring resonators on a substrate-integrated waveguide for microwave sensor applications.

PubMed

Sam, Somarith; Lim, Sungjoon

2013-04-01

This paper presents the modeling, design, fabrication, and measurement of an ultra-wideband tunable twoport resonator in which the substrate-integrated waveguide, complementary split-ring resonators (CSRRs), and varactors are embedded on the same planar platform. The tuning of the passband frequency is generated by a simple single dc voltage of 0 to 36 V, which is applied to each varactor on the CSRRs. Different capacitance values and resonant frequencies are produced while a nearly constant absolute bandwidth is maintained. The resonant frequency is varied between 0.83 and 1.58 GHz and has a wide tuning ratio of 90%.

High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

NASA Technical Reports Server (NTRS)

Ting, David Z.; Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.

2012-01-01

The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at 150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to 6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

Entropic Barriers for Two-Dimensional Quantum Memories

NASA Astrophysics Data System (ADS)

Brown, Benjamin J.; Al-Shimary, Abbas; Pachos, Jiannis K.

2014-03-01

Comprehensive no-go theorems show that information encoded over local two-dimensional topologically ordered systems cannot support macroscopic energy barriers, and hence will not maintain stable quantum information at finite temperatures for macroscopic time scales. However, it is still well motivated to study low-dimensional quantum memories due to their experimental amenability. Here we introduce a grid of defect lines to Kitaev's quantum double model where different anyonic excitations carry different masses. This setting produces a complex energy landscape which entropically suppresses the diffusion of excitations that cause logical errors. We show numerically that entropically suppressed errors give rise to superexponential inverse temperature scaling and polynomial system size scaling for small system sizes over a low-temperature regime. Curiously, these entropic effects are not present below a certain low temperature. We show that we can vary the system to modify this bound and potentially extend the described effects to zero temperature.

Barrier Engineered Quantum Dot Infrared Photodetectors

DTIC Science & Technology

2015-06-01

dual-color detectors using InAs/GaSb strained layer superlattices ." In Lester Eastman Conference on High Performance Devices (LEC), 2012, pp. 1-4. IEEE...Gautam, S. S. Krishna, E. P. Smith, S. Johnson, and S. Krishna. "Dual-band pBp detectors based on InAs/GaSb strained layer superlattices ." Infrared ...AFRL-RV-PS- AFRL-RV-PS- TR-2015-0111 TR-2015-0111 BARRIER ENGINEERED QUANTUM DOT INFRARED PHOTODETECTORS Sanjay Krishna Center for High Technology

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

NASA Technical Reports Server (NTRS)

Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

2001-01-01

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

Development and fabrication of S-band chip varactor parametric amplifier

NASA Technical Reports Server (NTRS)

Kramer, E.

1974-01-01

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.

Instanton and noninstanton tunneling in periodically perturbed barriers: semiclassical and quantum interpretations.

PubMed

Takahashi, Kin'ya; Ikeda, Kensuke S

2012-11-01

In multidimensional barrier tunneling, there exist two different types of tunneling mechanisms, instanton-type tunneling and noninstanton tunneling. In this paper we investigate transitions between the two tunneling mechanisms from the semiclassical and quantum viewpoints taking two simple models: a periodically perturbed Eckart barrier for the semiclassical analysis and a periodically perturbed rectangular barrier for the quantum analysis. As a result, similar transitions are observed with change of the perturbation frequency ω for both systems, and we obtain a comprehensive scenario from both semiclassical and quantum viewpoints for them. In the middle range of ω, in which the plateau spectrum is observed, noninstanton tunneling dominates the tunneling process, and the tunneling amplitude takes the maximum value. Noninstanton tunneling explained by stable-unstable manifold guided tunneling (SUMGT) from the semiclassical viewpoint is interpreted as multiphoton-assisted tunneling from the quantum viewpoint. However, in the limit ω→0, instanton-type tunneling takes the place of noninstanton tunneling, and the tunneling amplitude converges on a constant value depending on the perturbation strength. The spectrum localized around the input energy is observed, and there is a scaling law with respect to the width of the spectrum envelope, i.e., the width ∝ℏω. In the limit ω→∞, the tunneling amplitude converges on that of the unperturbed system, i.e., the instanton of the unperturbed system.

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

NASA Astrophysics Data System (ADS)

Deen, David A.; Osinsky, Andrei; Miller, Ross

2014-03-01

A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.;

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Energy barriers between metastable states in first-order quantum phase transitions

NASA Astrophysics Data System (ADS)

Wald, Sascha; Timpanaro, André M.; Cormick, Cecilia; Landi, Gabriel T.

2018-02-01

A system of neutral atoms trapped in an optical lattice and dispersively coupled to the field of an optical cavity can realize a variation of the Bose-Hubbard model with infinite-range interactions. This model exhibits a first-order quantum phase transition between a Mott insulator and a charge density wave, with spontaneous symmetry breaking between even and odd sites, as was recently observed experimentally [Landig et al., Nature (London) 532, 476 (2016), 10.1038/nature17409]. In the present paper, we approach the analysis of this transition using a variational model which allows us to establish the notion of an energy barrier separating the two phases. Using a discrete WKB method, we then show that the local tunneling of atoms between adjacent sites lowers this energy barrier and hence facilitates the transition. Within our simplified description, we are thus able to augment the phase diagram of the model with information concerning the height of the barrier separating the metastable minima from the global minimum in each phase, which is an essential aspect for the understanding of the reconfiguration dynamics induced by a quench across a quantum critical point.

Observations of barrier recombination in GaAs-AlGaAs quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Tsui, E.S.; Fletcher, E.D.

1989-05-29

Using laser structures with a window in the contact stripe, we have observed recombination from the wells and barrier regions of GaAs-AlGaAs quantum well lasers. The magnitude of the ratio of emission intensities from the barrier and the well, and the dependence of this ratio upon injection current, are in good agreement with a calculation in which the carrier populations in well and barrier are in thermal equilibrium at the lattice temperature (300 K).

Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate

NASA Astrophysics Data System (ADS)

Lan, Wen-An; Wang, Tsan-Chun; Huang, Ling-Hui; Wu, Tai-Bor

2006-07-01

Ferroelectric Ba(Zr0.25Ti0.75)O3 (BZT) thin films were deposited on high-resistivity Si substrate without or with inserting a high-k buffer layer of Ta2O5. The varactor characteristics of the BZT capacitors in metal-oxide-semiconductor structure were studied. At low frequency (1MHz ), the capacitors exhibit a negatively tunable characteristic, i.e., [C(V)-C(0)]/C(0)<0, against dc bias V, but opposite tunable characteristics were found at microwave frequencies (>1GHz). The change of voltage-dependent characteristic is attributed to the effect of low-resistivity interface induced by charged defects formed from interfacial oxidation of Si in screening the microwave from penetrating into the bulk of Si.

Quantum coherence in the reflection of above barrier wavepackets

NASA Astrophysics Data System (ADS)

Petersen, Jakob; Pollak, Eli

2018-02-01

The quantum phenomenon of above barrier reflection is investigated from a time-dependent perspective using Gaussian wavepackets. The transition path time distribution, which in principle is experimentally measurable, is used to study the mean flight times ⟨t⟩R and ⟨t⟩T associated with the reflection and the transmission over the barrier paying special attention to their dependence on the width of the barrier. Both flight times, and their difference Δt, exhibit two distinct regimes depending on the ratio of the spatial width of the incident wavepacket and the length of the barrier. When the ratio is larger than unity, the reflection and transmission dynamics are coherent and dominated by the resonances above the barrier. The flight times ⟨t⟩R/T and the flight time difference Δt oscillate as a function of the barrier width (almost in phase with the transmission probability). These oscillations reflect a momentum filtering effect related to the coherent superposition of the reflected and transmitted waves. For a ratio less than unity, the barrier reflection and transmission dynamics are incoherent and the oscillations are absent. The barrier width which separates the coherent and incoherent regimes is identified analytically. The oscillatory structure of the time difference Δt as a function of the barrier width in the coherent regime is absent when considered in terms of the Wigner phase time delays for reflection and transmission. We conclude that the Wigner phase time does not correctly describe the temporal properties of above barrier reflection. We also find that the structure of the reflected and transmitted wavepackets depends on the coherence of the process. In the coherent regime, the wavepackets can have an overlapping peak structure, but the peaks are not fully resolved. In the incoherent regime, the wavepackets split in time into distinct separated Gaussian like waves, each one reflecting the number of times the wavepacket crosses the barrier

Quantitative structure-activation barrier relationship modeling for Diels-Alder ligations utilizing quantum chemical structural descriptors.

PubMed

Nandi, Sisir; Monesi, Alessandro; Drgan, Viktor; Merzel, Franci; Novič, Marjana

2013-10-30

In the present study, we show the correlation of quantum chemical structural descriptors with the activation barriers of the Diels-Alder ligations. A set of 72 non-catalysed Diels-Alder reactions were subjected to quantitative structure-activation barrier relationship (QSABR) under the framework of theoretical quantum chemical descriptors calculated solely from the structures of diene and dienophile reactants. Experimental activation barrier data were obtained from literature. Descriptors were computed using Hartree-Fock theory using 6-31G(d) basis set as implemented in Gaussian 09 software. Variable selection and model development were carried out by stepwise multiple linear regression methodology. Predictive performance of the quantitative structure-activation barrier relationship (QSABR) model was assessed by training and test set concept and by calculating leave-one-out cross-validated Q2 and predictive R2 values. The QSABR model can explain and predict 86.5% and 80% of the variances, respectively, in the activation energy barrier training data. Alternatively, a neural network model based on back propagation of errors was developed to assess the nonlinearity of the sought correlations between theoretical descriptors and experimental reaction barriers. A reasonable predictability for the activation barrier of the test set reactions was obtained, which enabled an exploration and interpretation of the significant variables responsible for Diels-Alder interaction between dienes and dienophiles. Thus, studies in the direction of QSABR modelling that provide efficient and fast prediction of activation barriers of the Diels-Alder reactions turn out to be a meaningful alternative to transition state theory based computation.

Quantum damped oscillator II: Bateman’s Hamiltonian vs. 2D parabolic potential barrier

NASA Astrophysics Data System (ADS)

Chruściński, Dariusz

2006-04-01

We show that quantum Bateman’s system which arises in the quantization of a damped harmonic oscillator is equivalent to a quantum problem with 2D parabolic potential barrier known also as 2D inverted isotropic oscillator. It turns out that this system displays the family of complex eigenvalues corresponding to the poles of analytical continuation of the resolvent operator to the complex energy plane. It is shown that this representation is more suitable than the hyperbolic one used recently by Blasone and Jizba.

Delay time in a single barrier for a movable quantum shutter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez, Alberto

2010-05-15

The transient solution and delay time for a {delta} potential scatterer with a movable quantum shutter is calculated by solving analytically the time-dependent Schroedinger equation. The delay time is analyzed as a function of the distance between the shutter and the potential barrier and also as a function of the distance between the potential barrier and the detector. In both cases, it is found that the delay time exhibits a dynamical behavior and that it tends to a saturation value {Delta}t{sub sat} in the limit of very short distances, which represents the maximum delay produced by the potential barrier nearmore » the interaction region. The phase time {tau}{sub {theta},} on the other hand, is not an appropriate time scale for measuring the time delay near the interaction region, except if the shutter is moved far away from the potential. The role played by the antibound state of the system on the behavior of the delay time is also discussed.« less

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Liu, Hsueh-Hsing; Chen, Jun-Wei; Lu, Chien-Pin; Ikenaga, Kazutada; Tabuchi, Toshiya; Matsumoto, Koh; Fu, Yi-Keng

2017-12-01

We demonstrate that the light output power of deep ultraviolet light-emitting diodes (DUV-LEDs) can be improved by introducing an intrinsic last quantum barrier interlayer to a high quality AlN template. The light output power of the DUV-LEDs can be doubled by substituting the last quantum barrier with an intrinsic last quantum barrier (u-LQB)/Mg-doped LQB for only pure u-LQB in the same thickness with a 35 A/cm2 injection current. It is believed that the improved performance of the DUV LED could be attributed to the decreased diffusion of Mg tunneling into MQW and the reduction of sub-band parasitic emissions.

I-V characterization of a quantum well infrared photodetector with stepped and graded barriers

NASA Astrophysics Data System (ADS)

Nutku, F.; Erol, A.; Gunes, M.; Buklu, L. B.; Ergun, Y.; Arikan, M. C.

2012-09-01

I-V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been done under dark at temperatures between 20-300 K. Different current transport mechanisms and transition between them have been observed at temperature around 47 K. Activation energies of the electrons at various bias voltages have been obtained from the temperature dependent I-V measurements. Activation energy at zero bias has been calculated by extrapolating the bias dependence of the activation energies. Ground state energies and barrier heights of the four different quantum wells have been calculated by using an iterative technique, which depends on experimentally obtained activation energy. Ground state energies also have been calculated with transfer matrix technique and compared with iteration results. Incorporating the effect of high electron density induced electron exchange interaction on ground state energies; more consistent results with theoretical transfer matrix calculations have been obtained.

Barrier scattering with complex-valued quantum trajectories: Taxonomy and analysis of isochrones

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Julianne K.; Wyatt, Robert E.

2008-03-07

To facilitate the search for isochrones when using complex-valued trajectory methods for quantum barrier scattering calculations, the structure and shape of isochrones in the complex plane were studied. Isochrone segments were categorized based on their distinguishing features, which are shared by each situation studied: High and low energy wave packets, scattering from both thick and thin Gaussian and Eckart barriers of varying height. The characteristic shape of the isochrone is a trifurcated system: Trajectories that transmit the barrier are launched from the lower branch (T), while the middle and upper branches form the segments for reflected trajectories (F and B).more » In addition, a model is presented for the curved section of the lower branch (from which transmitted trajectories are launched), and important features of the complex extension of the initial wave packet are identified.« less

Magic angle for barrier-controlled double quantum dots

NASA Astrophysics Data System (ADS)

Yang, Xu-Chen; Wang, Xin

2018-01-01

We show that the exchange interaction of a singlet-triplet spin qubit confined in double quantum dots, when being controlled by the barrier method, is insensitive to a charged impurity lying along certain directions away from the center of the double-dot system. These directions differ from the polar axis of the double dots by the magic angle, equaling arccos(1 /√{3 })≈54 .7∘ , a value previously found in atomic physics and nuclear magnetic resonance. This phenomenon can be understood from an expansion of the additional Coulomb interaction created by the impurity, but also relies on the fact that the exchange interaction solely depends on the tunnel coupling in the barrier-control scheme. Our results suggest that for a scaled-up qubit array, when all pairs of double dots rotate their respective polar axes from the same reference line by the magic angle, crosstalk between qubits can be eliminated, allowing clean single-qubit operations. While our model is a rather simplified version of actual experiments, our results suggest that it is possible to minimize unwanted couplings by judiciously designing the layout of the qubits.

Electromagnetic Saturation of Angstrom-Sized Quantum Barriers at Terahertz Frequencies

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Jiyeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2015-09-01

Metal-graphene-metal hybrid structures allow angstrom-scale van der Waals gaps, across which electron tunneling occurs. We squeeze terahertz electromagnetic waves through these λ /10 000 000 gaps, accompanied by giant field enhancements. Unprecedented transmission reduction of 97% is achieved with the transient voltage across the gap saturating at 5 V. Electron tunneling facilitated by the transient electric field strongly modifies the gap index, starting a self-limiting process related to the barrier height. Our work enables greater interplay between classical optics and quantum tunneling, and provides optical indices to the van der Waals gaps.

Electromagnetic Saturation of Angstrom-Sized Quantum Barriers at Terahertz Frequencies.

PubMed

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Jiyeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2015-09-18

Metal-graphene-metal hybrid structures allow angstrom-scale van der Waals gaps, across which electron tunneling occurs. We squeeze terahertz electromagnetic waves through these λ/10 000 000 gaps, accompanied by giant field enhancements. Unprecedented transmission reduction of 97% is achieved with the transient voltage across the gap saturating at 5 V. Electron tunneling facilitated by the transient electric field strongly modifies the gap index, starting a self-limiting process related to the barrier height. Our work enables greater interplay between classical optics and quantum tunneling, and provides optical indices to the van der Waals gaps.

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

PubMed

Ji, Yun; Zhang, Zi-Hui; Tan, Swee Tiam; Ju, Zhen Gang; Kyaw, Zabu; Hasanov, Namig; Liu, Wei; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-01-15

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure.

Non-Uniform Bias Enhancement of a Varactor-Tuned FSS used with a Low Profile 2.4 GHz Dipole Antenna

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas M.; Miranda, Felix A.

2012-01-01

In this paper a low profile antenna using a nonuniformly biased varactor-tuned frequency selective surface (FSS) is presented. The tunable FSS avoids the use of vias and has a simplified DC bias network. The voltages to the DC bias ports can be varied independently allowing adjustment in the frequency response and enhanced radiation properties. The measured data demonstrate tunability from 2.15 GHz to 2.63 GHz with peak efficiencies that range from 50% to 90% and instantaneous bandwidths of 50 MHz to 280 MHz within the tuning range. The total antenna thickness is approximately lambda/45.

Molecular-Barrier-Enhanced Aromatic Fluorophores in Cocrystals with Unity Quantum Efficiency.

PubMed

Ye, Huanqing; Liu, Guangfeng; Liu, Sheng; Casanova, David; Ye, Xin; Tao, Xutang; Zhang, Qichun; Xiong, Qihua

2018-02-12

Singlet-triplet conversion in organic light-emitting materials introduces non-emissive (dark) and long-lived triplet states, which represents a significant challenge in constraining the optical properties. There have been considerable attempts at separating singlets and triplets in long-chain polymers, scavenging triplets, and quenching triplets with heavy metals; nonetheless, such triplet-induced loss cannot be fully eliminated. Herein, a new strategy of crafting a periodic molecular barrier into the π-conjugated matrices of organic aromatic fluorophores is reported. The molecular barriers effectively block the singlet-to-triplet pathway, resulting in near-unity photoluminescence quantum efficiency (PLQE) of the organic fluorophores. The transient optical spectroscopy measurements confirm the absence of the triplet absorption. These studies provide a general approach to preventing the formation of dark triplet states in organic semiconductors and bring new opportunities for the development of advanced organic optics and photonics. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

NASA Astrophysics Data System (ADS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asryan, L. V., E-mail: asryan@vt.edu; Zubov, F. I.; Kryzhanovskaya, N. V.

2016-10-15

The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current andmore » remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.« less

Role of wave packet width in quantum molecular dynamics in fusion reactions near barrier

NASA Astrophysics Data System (ADS)

Cao, X. G.; Ma, Y. G.; Zhang, G. Q.; Wang, H. W.; Anastasi, A.; Curciarello, F.; De Leo, V.

2014-05-01

The dynamical fusion process of 48Ca + 144Sm with different impact parameters near barrier is studied by an extended quantum molecular dynamics (EQMD) model, where width of wavepacket is dynamically treated based on variational principle. The time evolution of different energy components such as potential energy, kinetic energy, Coulomb energy and Pauli potential are analyzed when dynamical or fixed width is assumed in calculation. It is found that the dynamical wavepacket width can enhance the dissipation of incident energy and the fluctuations, which are important to form compound nuclei. Moreover, we compare the fusion barrier dependence on the incident energy when it is determined by both dynamical and fixed wavepacket width.

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

Quantum logic gates based on coherent electron transport in quantum wires.

PubMed

Bertoni, A; Bordone, P; Brunetti, R; Jacoboni, C; Reggiani, S

2000-06-19

It is shown that the universal set of quantum logic gates can be realized using solid-state quantum bits based on coherent electron transport in quantum wires. The elementary quantum bits are realized with a proper design of two quantum wires coupled through a potential barrier. Numerical simulations show that (a) a proper design of the coupling barrier allows one to realize any one-qbit rotation and (b) Coulomb interaction between two qbits of this kind allows the implementation of the CNOT gate. These systems are based on a mature technology and seem to be integrable with conventional electronics.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

NASA Astrophysics Data System (ADS)

Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

2018-05-01

In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.

Rogue waves generation in a left-handed nonlinear transmission line with series varactor diodes

NASA Astrophysics Data System (ADS)

Onana Essama, B. G.; Atangana, J.; Biya Motto, F.; Mokhtari, B.; Cherkaoui Eddeqaqi, N.; Kofane, Timoleon C.

2014-07-01

We investigate the electromagnetic wave behavior and its characterization using collective variables technique. Second-order dispersion, first- and second-order nonlinearities, which strongly act in a left-handed nonlinear transmission line with series varactor diodes, are taken into account. Four frequency ranges have been found. The first one gives the so-called energetic soliton due to a perfect combination of second-order dispersion and first-order nonlinearity. The second frequency range presents a dispersive soliton leading to the collapse of the electromagnetic wave at the third frequency range. But the fourth one shows physical conditions which are able to provoke the appearance of wave trains generation with some particular waves, the rogue waves. Moreover, we demonstrate that the number of rogue waves increases with frequency. The soliton, thereafter, gains a relative stability when second-order nonlinearity comes into play with some specific values in the fourth frequency range. Furthermore, the stability conditions of the electromagnetic wave at high frequencies have been also discussed.

FIBER AND INTEGRATED OPTICS: Problems involved in the profiling of quantum wells and barriers for optoelectronic applications

NASA Astrophysics Data System (ADS)

Eliseev, P. G.; Zakhar'ev, B. N.

1992-10-01

Some important problems concerning the profiling of the potential energy in quantum-well lasers are discussed. The goals being sought are to introduce a relative shift of the levels of localized states, to introduce an energy gap, and to reduce the transmission of barriers without increasing their height.

Quantum chemical modeling of zeolite-catalyzed methylation reactions: toward chemical accuracy for barriers.

PubMed

Svelle, Stian; Tuma, Christian; Rozanska, Xavier; Kerber, Torsten; Sauer, Joachim

2009-01-21

The methylation of ethene, propene, and t-2-butene by methanol over the acidic microporous H-ZSM-5 catalyst has been investigated by a range of computational methods. Density functional theory (DFT) with periodic boundary conditions (PBE functional) fails to describe the experimentally determined decrease of apparent energy barriers with the alkene size due to inadequate description of dispersion forces. Adding a damped dispersion term expressed as a parametrized sum over atom pair C(6) contributions leads to uniformly underestimated barriers due to self-interaction errors. A hybrid MP2:DFT scheme is presented that combines MP2 energy calculations on a series of cluster models of increasing size with periodic DFT calculations, which allows extrapolation to the periodic MP2 limit. Additionally, errors caused by the use of finite basis sets, contributions of higher order correlation effects, zero-point vibrational energy, and thermal contributions to the enthalpy were evaluated and added to the "periodic" MP2 estimate. This multistep approach leads to enthalpy barriers at 623 K of 104, 77, and 48 kJ/mol for ethene, propene, and t-2-butene, respectively, which deviate from the experimentally measured values by 0, +13, and +8 kJ/mol. Hence, enthalpy barriers can be calculated with near chemical accuracy, which constitutes significant progress in the quantum chemical modeling of reactions in heterogeneous catalysis in general and microporous zeolites in particular.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Haddad, G. I.; Lomax, R. J.; Masnari, N. A.; Shabde, S. E.

1971-01-01

Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Steric, Quantum, and Electrostatic Effects on SN2 Reaction Barriers in Gas Phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Shubin; Hu, Hao; Pedersen, Lee G.

2010-05-13

Biomolecular nucleophilic substitution reactions, S{sub N}2, are fundamental and commonplace in chemistry. It is the well-documented experimental finding in the literature that vicinal substitution with bulkier groups near the reaction center significantly slows the reaction due to steric hindrance, but theoretical understanding in the quantitative manner about factors dictating the S{sub N}2 reaction barrier height is still controversial. In this work, employing the new quantification approach that we recently proposed for the steric effect from the density functional theory framework, we investigate the relative contribution of three independent effects—steric, electrostatic, and quantum—to the S{sub N}2 barrier heights in gas phasemore » for substituted methyl halide systems, R{sub 1}R{sub 2}R{sub 3}CX, reacting with the fluorine anion, where R{sub 1}, R{sub 2}, and R{sub 3} denote substituting groups and X = F or Cl. We found that in accordance with the experimental finding, for these systems, the steric effect dominates the transition state barrier, contributing positively to barrier heights, but this contribution is largely compensated by the negative, stabilizing contribution from the quantum effect due to the exchange-correlation interactions. Moreover, we find that it is the component from the electrostatic effect that is linearly correlated with the S{sub N}2 barrier height for the systems investigated in the present study. In addition, we compared our approach with the conventional method of energy decomposition in density functional theory as well as examined the steric effect from the wave function theory for these systems via natural bond orbital analysis.« less

Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene.

PubMed

Ebrish, Mona A; Olson, Eric J; Koester, Steven J

2014-07-09

The concentration-dependent density of states in graphene allows the capacitance in metal-oxide-graphene structures to be tunable with the carrier concentration. This feature allows graphene to act as a variable capacitor (varactor) that can be utilized for wireless sensing applications. Surface functionalization can be used to make graphene sensitive to a particular species. In this manuscript, the effect on the quantum capacitance of noncovalent basal plane functionalization using 1-pyrenebutanoic acid succimidyl ester and glucose oxidase is reported. It is found that functionalized samples tested in air have (1) a Dirac point similar to vacuum conditions, (2) increased maximum capacitance compared to vacuum but similar to air, (3) and quantum capacitance "tuning" that is greater than that in vacuum and ambient atmosphere. These trends are attributed to reduced surface doping and random potential fluctuations as a result of the surface functionalization due to the displacement of H2O on the graphene surface and intercalation of a stable H2O layer beneath graphene that increases the overall device capacitance. The results are important for future application of graphene as a platform for wireless chemical and biological sensors.

Anti-collimation of ballistic electrons by a potential barrier

NASA Astrophysics Data System (ADS)

Coleridge, P. T.; Taylor, R. P.; Sachrajda, A. S.; Adams, J. A.

1994-03-01

A pair of Quantum Point Contacts separated by a continuous barrier have been fabricated using the surface gate technique. Transport measurements for each component of this system and for various combinations have shown both additive and non-additive behaviour. The results are explained by a combination of reflection by the barrier of electrons collimated by the Quantum Point Contacts and transport by diffusion across the barrier.

Unipolar Barrier Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Soibel, Alexander (Inventor); Khoshakhlagh, Arezou (Inventor); Gunapala, Sarath (Inventor)

2017-01-01

Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.

Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tkach, N. V., E-mail: ktf@chnu.edu.ua; Seti, Ju. A.; Grynyshyn, Yu. B.

2015-04-15

The theory of electron tunneling through an open nanostructure as an active element of a quantum cascade detector is developed, which takes into account the interaction of electrons with confined and interface phonons. Using the method of finite-temperature Green’s functions and the electron-phonon Hamiltonian in the representation of second quantization over all system variables, the temperature shifts and electron-level widths are calculated and the contributions of different electron-phonon-interaction mechanisms to renormalization of the spectral parameters are analyzed depending on the geometrical configuration of the nanosystem. Due to weak electron-phonon coupling in a GaAs/Al{sub 0.34}Ga{sub 0.66}As-based resonant tunneling nanostructure, the temperaturemore » shift and rf field absorption peak width are not very sensitive to the electron-phonon interaction and result from a decrease in potential barrier heights caused by a difference in the temperature dependences of the well and barrier band gaps.« less

The role of quantum effects in proton transfer reactions in enzymes: quantum tunneling in a noisy environment?

NASA Astrophysics Data System (ADS)

Bothma, Jacques P.; Gilmore, Joel B.; McKenzie, Ross H.

2010-05-01

We consider the role of quantum effects in the transfer of hydrogen-like species in enzyme-catalyzed reactions. This review is stimulated by claims that the observed magnitude and temperature dependence of kinetic isotope effects (KIEs) implies that quantum tunneling below the energy barrier associated with the transition state significantly enhances the reaction rate in many enzymes. We review the path integral approach and the Caldeira-Leggett model, which provides a general framework to describe and understand tunneling in a quantum system that interacts with a noisy environment at nonzero temperature. Here the quantum system is the active site of the enzyme, and the environment is the surrounding protein and water. Tunneling well below the barrier only occurs for temperatures less than a temperature T0, which is determined by the curvature of the potential energy surface near the top of the barrier. We argue that for most enzymes this temperature is less than room temperature. We review typical values for the parameters in the Caldeira-Leggett Hamiltonian, including the frequency-dependent friction and noise due to the environment. For physically reasonable parameters, we show that quantum transition state theory gives a quantitative description of the temperature dependence and magnitude of KIEs for two classes of enzymes that have been claimed to exhibit signatures of quantum tunneling. The only quantum effects are those associated with the transition state, both reflection at the barrier top and tunneling just below the barrier. We establish that the friction and noise due to the environment are weak and only slightly modify the reaction rate. Furthermore, at room temperature and for typical energy barriers environmental fluctuations with frequencies much less than 1000 cm-1 do not have a significant effect on quantum corrections to the reaction rate. This is essentially because the time scales associated with the dynamics of proton transfer are faster than

Barrier infrared detector research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Ting, David Z.; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.; Khoshakhlagh, Arezou; Soibel, Alexander; Nguyen, Jean; Höglund, Linda; Rafol, B., , Sir; Hill, Cory J.; Gunapala, Sarath D.

2012-10-01

The barrier infrared detector device architecture offers the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. The versatility of the antimonide material system, with the availability of three different types of band offsets for flexibility in device design, provides the ideal setting for implementing barrier infrared detectors. We describe the progress made at the NASA Jet Propulsion Laboratory in recent years in Barrier infrared detector research that resulted in high-performance quantum structure infrared detectors, including the type-II superlattice complementary barrier infrared detector (CBIRD), and the high operating quantum dot barrier infrared detector (HOT QD-BIRD).

Control of radiative base recombination in the quantum cascade light-emitting transistor using quantum state overlap

NASA Astrophysics Data System (ADS)

Chen, Kanuo; Hsiao, Fu-Chen; Joy, Brittany; Dallesasse, John M.

2018-07-01

The concept of the quantum cascade light-emitting transistor (QCLET) is proposed by incorporating periodic stages of quantum wells and barriers in the completely depleted base-collector junction of a heterojunction bipolar transistor. The radiative band-to-band base recombination in the QCLET is shown to be controllable using the base-collector voltage bias for a given emitter-base biasing condition. A self-consistent Schrödinger-Poisson Equation model is built to validate the idea of the QCLET. A GaAs-based QCLET is designed and fabricated. Control of radiative band-to-band base recombination is observed and characterized. By changing the voltage across the quantum cascade region in the QCLET, the alignment of quantum states in the cascade region creates a tunable barrier for electrons that allows or suppresses emitter-injected electron flow from the p-type base through the quantum cascade region into the collector. The field-dependent electron barrier in the base-collector junction manipulates the effective minority carrier lifetime in the base and controls the radiative base recombination process. Under different quantum cascade region biasing conditions, the radiative base recombination is measured and analyzed.

Towards self-correcting quantum memories

NASA Astrophysics Data System (ADS)

Michnicki, Kamil

This thesis presents a model of self-correcting quantum memories where quantum states are encoded using topological stabilizer codes and error correction is done using local measurements and local dynamics. Quantum noise poses a practical barrier to developing quantum memories. This thesis explores two types of models for suppressing noise. One model suppresses thermalizing noise energetically by engineering a Hamiltonian with a high energy barrier between code states. Thermalizing dynamics are modeled phenomenologically as a Markovian quantum master equation with only local generators. The second model suppresses stochastic noise with a cellular automaton that performs error correction using syndrome measurements and a local update rule. Several ways of visualizing and thinking about stabilizer codes are presented in order to design ones that have a high energy barrier: the non-local Ising model, the quasi-particle graph and the theory of welded stabilizer codes. I develop the theory of welded stabilizer codes and use it to construct a code with the highest known energy barrier in 3-d for spin Hamiltonians: the welded solid code. Although the welded solid code is not fully self correcting, it has some self correcting properties. It has an increased memory lifetime for an increased system size up to a temperature dependent maximum. One strategy for increasing the energy barrier is by mediating an interaction with an external system. I prove a no-go theorem for a class of Hamiltonians where the interaction terms are local, of bounded strength and commute with the stabilizer group. Under these conditions the energy barrier can only be increased by a multiplicative constant. I develop cellular automaton to do error correction on a state encoded using the toric code. The numerical evidence indicates that while there is no threshold, the model can extend the memory lifetime significantly. While of less theoretical importance, this could be practical for real

Tunneling time in space fractional quantum mechanics

NASA Astrophysics Data System (ADS)

Hasan, Mohammad; Mandal, Bhabani Prasad

2018-02-01

We calculate the time taken by a wave packet to travel through a classically forbidden region of space in space fractional quantum mechanics. We obtain the close form expression of tunneling time from a rectangular barrier by stationary phase method. We show that tunneling time depends upon the width b of the barrier for b → ∞ and therefore Hartman effect doesn't exist in space fractional quantum mechanics. Interestingly we found that the tunneling time monotonically reduces with increasing b. The tunneling time is smaller in space fractional quantum mechanics as compared to the case of standard quantum mechanics. We recover the Hartman effect of standard quantum mechanics as a special case of space fractional quantum mechanics.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Choudhury, K. K. D.; Haddad, G. I.; Kwok, S. P.; Masnari, N. A.; Trew, R. J.

1972-01-01

Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Jing; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Liu, Wei; Liang, Feng; Liu, Shuangtao; Xing, Yao; Wang, Wenjie; Li, Mo

2018-02-01

Room-temperature photoluminescence (RT PL) spectra of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition (MOCVD) was investigated. It is found that with increasing In content in GaN barriers, the FWHM and emission intensity decreases, and the emission wavelength is first red shift and then blue shift. The shrinkage of FWHM and emission wavelength blue shift can be attributed to the reduction of piezoelectric field, and the lower height of potential barrier will make carrier confinement weaker and ground state level lower, which resulting in emission intensity decreasing and wavelength red shift. In addition, doping the barrier with In will induce more inhomogeneous and deeper localized states in InGaN QWs, which also contribute to a red shift of PL emission wavelength.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Energy barriers and rates of tautomeric transitions in DNA bases: ab initio quantum chemical study.

PubMed

Basu, Soumalee; Majumdar, Rabi; Das, Gourab K; Bhattacharyya, Dhananjay

2005-12-01

Tautomeric transitions of DNA bases are proton transfer reactions, which are important in biology. These reactions are involved in spontaneous point mutations of the genetic material. In the present study, intrinsic reaction coordinates (IRC) analyses through ab initio quantum chemical calculations have been carried out for the individual DNA bases A, T, G, C and also A:T and G:C base pairs to estimate the kinetic and thermodynamic barriers using MP2/6-31G** method for tautomeric transitions. Relatively higher values of kinetic barriers (about 50-60 kcal/mol) have been observed for the single bases, indicating that tautomeric alterations of isolated single bases are quite unlikely. On the other hand, relatively lower values of the kinetic barriers (about 20-25 kcal/mol) for the DNA base pairs A:T and G:C clearly suggest that the tautomeric shifts are much more favorable in DNA base pairs than in isolated single bases. The unusual base pairing A':C, T':G, C':A or G':T in the daughter DNA molecule, resulting from a parent DNA molecule with tautomeric shifts, is found to be stable enough to result in a mutation. The transition rate constants for the single DNA bases in addition to the base pairs are also calculated by computing the free energy differences between the transition states and the reactants.

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Properties of GaP Schottky barrier diodes at elevated temperatures.

NASA Technical Reports Server (NTRS)

Nannichi, Y.; Pearson, G. L.

1969-01-01

Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency

Detection of fractional solitons in quantum spin Hall systems

NASA Astrophysics Data System (ADS)

Fleckenstein, C.; Traverso Ziani, N.; Trauzettel, B.

2018-03-01

We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

Quantum Transport

DTIC Science & Technology

1993-05-14

Lent 6 I We have studied transmission in quantum waveguides in the presence of resonant cavities. This work was inspired by our previous modeling of the...conductance of resonantly- coupled quantum wire systems. We expected to find qualitatively the same phenomena as in the much studied case of double...transmission peaks does not give the location of the quasi-bound3 states, like for double-barrier resonant tunneling. In current work, we study

Theranostic quantum dots for crossing blood–brain barrier in vitro and providing therapy of HIV-associated encephalopathy

PubMed Central

Xu, Gaixia; Mahajan, Supriya; Roy, Indrajit; Yong, Ken-Tye

2013-01-01

The blood–brain barrier (BBB) is a complex physiological checkpoint that restricts the free diffusion of circulating molecules from the blood into the central nervous system. Delivering of drugs and other active agents across the BBB is one of the major technical challenges faced by scientists and medical practitioners. Therefore, development of novel methodologies to address this challenge holds the key for both the diagnosis and treatment of brain diseases, such as HIV-associated encephalopathy. Bioconjugated quantum dots (QDs) are excellent fluorescent probes and nano-vectors, being designed to transverse across the BBB and visualize drug delivery inside the brain. This paper discusses the use of functionalized QDs for crossing the blood–brain barrier and treating brain disease. We highlight the guidelines for using in vitro BBB models for brain disease studies. The theranostic QDs offers a strategy to significantly improve the effective dosages of drugs to transverse across the BBB and orientate to the targets inside the brain. PMID:24298256

Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

DTIC Science & Technology

1982-05-01

semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

NASA Astrophysics Data System (ADS)

Haridasan, Vrinda

rejection, and constant bandwidth is designed, simulated, fabricated and measured. The filters are fabricated using barium strontium titanate (BST) varactors. Electromagnetic simulations and measured results of the tunable two-pole ferroelectric filter are analyzed to explore the origins of high insertion loss in ferroelectric filters. The results indicate that the high-permittivity of the BST (a ferroelectric) not only makes the filters tunable and compact, but also increases the conductive loss of the ferroelectric-based tunable resonators which translates into high insertion loss in ferroelectric filters.

Gate-controlled tunneling of quantum Hall edge states in bilayer graphene

NASA Astrophysics Data System (ADS)

Zhu, Jun; Li, Jing; Wen, Hua

Controlled tunneling of integer and fractional quantum Hall edge states provides a powerful tool to probe the physics of 1D systems and exotic particle statistics. Experiments in GaAs 2DEGs employ either a quantum point contact or a line junction tunnel barrier. It is generally difficult to independently control the filling factors νL and νR on the two sides of the barrier. Here we show that in bilayer graphene both νL and νR as well as their Landau level structures can be independently controlled using a dual-split-gate structure. In addition, the height of the line-junction tunnel barrier implemented in our experiments is tunable via a 5th gate. By measuring the tunneling resistance across the junction RT we examine the equilibration of the edge states in a variety of νL/νR scenarios and under different barrier heights. Edge states from both sides are fully mixed in the case of a low barrier. As the barrier height increases, we observe plateaus in RT that correspond to sequential complete backscattering of edge states. Gate-controlled manipulation of edge states offers a new angle to the exploration of quantum Hall magnetism and fractional quantum Hall effect in bilayer graphene.

Frictional lubricity enhanced by quantum mechanics.

PubMed

Zanca, Tommaso; Pellegrini, Franco; Santoro, Giuseppe E; Tosatti, Erio

2018-04-03

The quantum motion of nuclei, generally ignored in the physics of sliding friction, can affect in an important manner the frictional dissipation of a light particle forced to slide in an optical lattice. The density matrix-calculated evolution of the quantum version of the basic Prandtl-Tomlinson model, describing the dragging by an external force of a point particle in a periodic potential, shows that purely classical friction predictions can be very wrong. The strongest quantum effect occurs not for weak but for strong periodic potentials, where barriers are high but energy levels in each well are discrete, and resonant Rabi or Landau-Zener tunneling to states in the nearest well can preempt classical stick-slip with nonnegligible efficiency, depending on the forcing speed. The resulting permeation of otherwise unsurmountable barriers is predicted to cause quantum lubricity, a phenomenon which we expect should be observable in the recently implemented sliding cold ion experiments.

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15}more » layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.« less

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freytag, Stefan, E-mail: stefan.freytag@ovgu.de; Feneberg, Martin; Berger, Christoph

2016-07-07

In{sub x}Ga{sub 1–x}N/GaN single and multi quantum well (MQW) structures with x ≈ 0.13 were investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and luminescence. Clear evidence of unintentional indium incorporation into the nominal GaN barrier layers is found. The unintentional In content is found to be around 3%. Inhomogeneous distribution of In atoms occurs within the distinct quantum well (QW) layers, which is commonly described as statistical alloy fluctuation and leads to the characteristic S-shape temperature shift of emission energy. Furthermore, differences in emission energy between the first and the other QWs of a MQW stack are found experimentally. Thismore » effect is discussed with the help of model calculations and is assigned to differences in the confining potential due to unwanted indium incorporation for the upper QWs.« less

Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

PubMed

Tong, Cunzhu; Yoon, Soon Fatt; Wang, Lijun

2012-09-24

We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.

[The photoluminescence characteristics of organic multilayer quantum wells].

PubMed

Zhao, De-Wei; Song, Shu-Fang; Zhao, Su-Ling; Xu, Zheng; Wang, Yong-Sheng; Xu, Xu-Rong

2007-04-01

By the use of multi-source high-vaccum organic beam deposition system, the authors prepared organic multilayer quantum well structures, which consist of alternate organic small molecule materials PBD and Alq3. Based on 4-period organic quantum wells, different samples with different thickness barriers and wells were prepared. The authors measured the lowest unoccupied molecular orbit (LUMO) and the highest occupied molecular orbit (HOMO) by electrochemistry cyclic voltammetry and optical absorption. From the energy diagrams, it seems like type-I quantum well structures of the inorganic semiconductor, in which PBD is used as a barrier layer and Alq3 as a well layer and emitter. From small angle X-ray diffraction measurements, the results indicate that these structures have high interface quality and uniformity. The photoluminescence characteristics of organic multilayer quantum wells were investigated. The PL peak has a blue-shift with the decrease of the well layer thickness. Meanwhile as the barrier thickness decreases the PL peaks of PBD disappear gradually. And the energy may be effectively transferred from PBD to Alq3, inducing an enhancement of the luminescence of Alq3.

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

NASA Astrophysics Data System (ADS)

Romanov, I. S.; Prudaev, I. A.; Kopyev, V. V.

2018-06-01

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs.

PubMed

Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I; Cheng, Yung-Chen

2017-11-09

The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

NASA Astrophysics Data System (ADS)

Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I.; Cheng, Yung-Chen

2017-11-01

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I- V) curves, light output power versus injection current ( L- I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Quantum dynamics modeled by interacting trajectories

NASA Astrophysics Data System (ADS)

Cruz-Rodríguez, L.; Uranga-Piña, L.; Martínez-Mesa, A.; Meier, C.

2018-03-01

We present quantum dynamical simulations based on the propagation of interacting trajectories where the effect of the quantum potential is mimicked by effective pseudo-particle interactions. The method is applied to several quantum systems, both for bound and scattering problems. For the bound systems, the quantum ground state density and zero point energy are shown to be perfectly obtained by the interacting trajectories. In the case of time-dependent quantum scattering, the Eckart barrier and uphill ramp are considered, with transmission coefficients in very good agreement with standard quantum calculations. Finally, we show that via wave function synthesis along the trajectories, correlation functions and energy spectra can be obtained based on the dynamics of interacting trajectories.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

NASA Astrophysics Data System (ADS)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Fabrication and characterization of tunnel barriers in a multi-walled carbon nanotube formed by argon atom beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomizawa, H.; Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585; Yamaguchi, T., E-mail: tyamag@riken.jp

We have evaluated tunnel barriers formed in multi-walled carbon nanotubes (MWNTs) by an Ar atom beam irradiation method and applied the technique to fabricate coupled double quantum dots. The two-terminal resistance of the individual MWNTs was increased owing to local damage caused by the Ar beam irradiation. The temperature dependence of the current through a single barrier suggested two different contributions to its Arrhenius plot, i.e., formed by direct tunneling through the barrier and by thermal activation over the barrier. The height of the formed barriers was estimated. The fabrication technique was used to produce coupled double quantum dots withmore » serially formed triple barriers on a MWNT. The current measured at 1.5 K as a function of two side-gate voltages resulted in a honeycomb-like charge stability diagram, which confirmed the formation of the double dots. The characteristic parameters of the double quantum dots were calculated, and the feasibility of the technique is discussed.« less

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure

NASA Astrophysics Data System (ADS)

Peng, Ruizhi; Chunfuzhang; Han, Genquan; Hao, Yue

2017-06-01

This paper presents modeling and simulation of a multiple quantum well structure formed with Ge0.95Sn0.05 quantum wells separated by Ge0.51Si0.35Sn0.14 barriers for the applications. These alloy compositions are chosen to satisfy two conditions simultaneously: type-I band alignment between Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 and a lattice match between wells and barriers. This lattice match ensures that the strain-free structure can be grown upon a relaxed Ge0.51Si0.35Sn0.14 buffer on a silicon substrate - a CMOS compatible process. A electro-absorption modulator with the Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 multiple quantum well structure based on quantum-confined Stark effect(QCSE) is demonstrated in theory. The energy band diagrams of the GeSiSn/GeSn multi-quantum-well structure at 0 and 0.5V bias are calculated, respectively. And the corresponding absorption coefficients as a function of cut-off energy for this multiple quantum well structure at 0 and 0.5Vbias are also obtained, respectively. The reduction of cut-off energy is observed with the applying of the external electric field, indicating a strong QCSE in the structure.

Photovoltaic driven multiple quantum well optical modulator

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2015-06-01

Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al0.3Ga0.7As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

Energy Levels in Quantum Wells.

NASA Astrophysics Data System (ADS)

Zang, Jan Xin

Normalized analytical equations for eigenstates of an arbitrary one-dimensional configuration of square potentials in a well have been derived. The general formulation is used to evaluate the energy levels of a particle in a very deep potential well containing seven internal barriers. The configuration can be considered as a finite superlattice sample or as a simplified model for a sample with only several atom layers. The results are shown in graphical forms as functions of the height and width of the potential barriers and as functions of the ratio of the effective mass in barrier to the mass in well. The formation of energy bands and surface eigenstates from eigenstates of a deep single well, the coming close of two energy bands and a surface state which are separate ordinarily, and mixing of the wave function of a surface state with the bulk energy bands are seen. Then the normalized derivation is extended to study the effect of a uniform electric field applied across a one-dimensional well containing an internal configuration of square potentials The general formulation is used to calculate the electric field dependence of the energy levels of a deep well with five internal barriers. Typical results are shown in graphical forms as functions of the barrier height, barrier width, barrier effective mass and the field strength. The formation of Stark ladders and surface states from the eigenstates of a single deep well in an electric field, the localization process of wave functions with changing barrier height, width, and field strength and their anticrossing behaviors are seen. The energy levels of a hydrogenic impurity in a uniform medium and in a uniform magnetic field are calculated with variational methods. The energy eigenvalues for the eigenstates with major quantum number less than or equal to 3 are obtained. The results are consistent with previous results. Furthermore, the energy levels of a hydrogenic impurity at the bottom of a one

Solution-processed, barrier-confined, and 1D nanostructure supported quasi-quantum well with large photoluminescence enhancement.

PubMed

Yan, Keyou; Zhang, Lixia; Kuang, Qin; Wei, Zhanhua; Yi, Ya; Wang, Jiannong; Yang, Shihe

2014-04-22

Planar substrate supported semiconductor quantum well (QW) structures are not amenable to manipulation in miniature devices, while free-standing QW nanostructures, e.g., ultrathin nanosheets and nanoribbons, suffer from mechanical and environmental instability. Therefore, it is tempting to fashion high-quality QW structures on anisotropic and mechanically robust supporting nanostructures such as nanowires and nanoplates. Herein, we report a solution quasi-heteroepitaxial route for growing a barrier-confined quasi-QW structure (ZnSe/CdSe/ZnSe) on the supporting arms of ZnO nanotetrapods, which have a 1D nanowire structure, through the combination of ion exchange and successive deposition assembly. This resulted in highly crystalline and highly oriented quasi-QWs along the whole axial direction of the arms of the nanotetrapod because a transition buffer layer (Zn(x)Cd(1-x)Se) was formed and in turn reduced the lattice mismatch and surface defects. Significantly, such a barrier-confined QW emits excitonic light ∼17 times stronger than the heterojunction (HJ)-type structure (ZnSe/CdSe, HJ) at the single-particle level. Time-resolved photoluminescence from ensemble QWs exhibits a lifetime of 10 ns, contrasting sharply with ∼300 ps for the control HJ sample. Single-particle PL and Raman spectra suggest that the barrier layer of QW has completely removed the surface trap states on the HJ and restored or upgraded the photoelectric properties of the semiconductor layer. Therefore, this deliberate heteroepitaxial growth protocol on the supporting nanotetrapod has realized a several micrometer long QW structure with high mechanical robustness and high photoelectric quality. We envision that such QWs integrated on 1D nanostructures will largely improve the performance of solar cells and bioprobes, among others.

Crystal Phase Quantum Well Emission with Digital Control.

PubMed

Assali, S; Lähnemann, J; Vu, T T T; Jöns, K D; Gagliano, L; Verheijen, M A; Akopian, N; Bakkers, E P A M; Haverkort, J E M

2017-10-11

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Quantum dynamics of hydrogen atoms on graphene. II. Sticking.

PubMed

Bonfanti, Matteo; Jackson, Bret; Hughes, Keith H; Burghardt, Irene; Martinazzo, Rocco

2015-09-28

Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (∼0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated.

Quantum dynamics of hydrogen atoms on graphene. II. Sticking

NASA Astrophysics Data System (ADS)

Bonfanti, Matteo; Jackson, Bret; Hughes, Keith H.; Burghardt, Irene; Martinazzo, Rocco

2015-09-01

Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (˜0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated.

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

2017-11-01

We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

Understanding Quantum Tunneling through Quantum Monte Carlo Simulations.

PubMed

Isakov, Sergei V; Mazzola, Guglielmo; Smelyanskiy, Vadim N; Jiang, Zhang; Boixo, Sergio; Neven, Hartmut; Troyer, Matthias

2016-10-28

The tunneling between the two ground states of an Ising ferromagnet is a typical example of many-body tunneling processes between two local minima, as they occur during quantum annealing. Performing quantum Monte Carlo (QMC) simulations we find that the QMC tunneling rate displays the same scaling with system size, as the rate of incoherent tunneling. The scaling in both cases is O(Δ^{2}), where Δ is the tunneling splitting (or equivalently the minimum spectral gap). An important consequence is that QMC simulations can be used to predict the performance of a quantum annealer for tunneling through a barrier. Furthermore, by using open instead of periodic boundary conditions in imaginary time, equivalent to a projector QMC algorithm, we obtain a quadratic speedup for QMC simulations, and achieve linear scaling in Δ. We provide a physical understanding of these results and their range of applicability based on an instanton picture.

Capture and Emission of Charge Carriers by Quantum Well

NASA Astrophysics Data System (ADS)

Davydov, V. N.; Karankevich, O. A.

2018-06-01

The interaction of electrons from the conduction band of the barrier layer of a LED heterostructure with the quantum well size-quantization level described by the capture time and emission time of charge carriers is considered. Relaxation of an excess energy upon capture and emission of charge carriers occurs as a result of their collisions with phonons of the quantum well substance and the "barrier layer-quantum well" interface. Analytical expressions are obtained for the interaction times, taking into account the depth of the sizequantization level, involved in the interaction with electrons, and the width of the well. Numerical estimates show that in real conditions, the capture time is shorter than the emission time, and this difference increases with increasing depth of the level. At shallow depths, the capture and emission times are comparable.

Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vignesh, G.; Nithiananthi, P., E-mail: nithyauniq@gmail.com

2015-06-24

Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al{sub 0.3}Ga{sub 0.7}As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

Electrically tunable g factors in quantum dot molecular spin states.

PubMed

Doty, M F; Scheibner, M; Ponomarev, I V; Stinaff, E A; Bracker, A S; Korenev, V L; Reinecke, T L; Gammon, D

2006-11-10

We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin states that have molecular wave functions distributed over both quantum dots. We propose a phenomenological model for the change in g factor based on resonant changes in the amplitude of the wave function in the barrier due to the formation of bonding and antibonding orbitals.

Electrically Tunable g Factors in Quantum Dot Molecular Spin States

NASA Astrophysics Data System (ADS)

Doty, M. F.; Scheibner, M.; Ponomarev, I. V.; Stinaff, E. A.; Bracker, A. S.; Korenev, V. L.; Reinecke, T. L.; Gammon, D.

2006-11-01

We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin states that have molecular wave functions distributed over both quantum dots. We propose a phenomenological model for the change in g factor based on resonant changes in the amplitude of the wave function in the barrier due to the formation of bonding and antibonding orbitals.

[Optical and electrical properties of NPB/Alq3 organic quantum well].

PubMed

Huang, Jin-Zhao; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Wang, Yong

2007-04-01

In the present paper, the organic quantum-well device similar to the type-II quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB (N, N'-di-[(1-naphthalenyl)-N, N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine) and Alq3 (Tris-(8-quinolinolato) aluminum) act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Forster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.

Micromachined Radio Frequency (RF) Switches and Tunable Capacitors for Higher Performance Secure Communications Systems

DTIC Science & Technology

2003-04-01

range filters implemented with traditional semiconductor varactor diodes can require complex series-parallel circuit constructions to achieve sufficient...filter slice of the AIU and the varactor array modules are shown in Fig. 6.2. The complexity of the varactor array is clearly apparent. Further, it is...38 Fig. 6.2: Schematic of F-22 AIU UHF tracking filter, 2-pole filter, and varactor diode assembly

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Laser-Driven Recollisions under the Coulomb Barrier.

PubMed

Keil, Th; Popruzhenko, S V; Bauer, D

2016-12-09

Photoelectron spectra obtained from the ab initio solution of the time-dependent Schrödinger equation can be in striking disagreement with predictions by the strong-field approximation (SFA), not only at low energy but also around twice the ponderomotive energy where the transition from the direct to the rescattered electrons is expected. In fact, the relative enhancement of the ionization probability compared to the SFA in this regime can be several orders of magnitude. We show for which laser and target parameters such an enhancement occurs and for which the SFA prediction is qualitatively good. The enhancement is analyzed in terms of the Coulomb-corrected action along analytic quantum orbits in the complex-time plane, taking soft recollisions under the Coulomb barrier into account. These recollisions in complex time and space prevent a separation into sub-barrier motion up to the "tunnel exit" and subsequent classical dynamics. Instead, the entire quantum path up to the detector determines the ionization probability.

Application of RF varactor using Ba(x)Sr(1-x)TiO3/TiO2/HR-Si substrate for reconfigurable radio.

PubMed

Kim, Ki-Byoung; Park, Chul-Soon

2007-11-01

In this paper, the potential feasibility of integrating Ba(x)Sr(1-x)TiO3 (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO2 thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO2 as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO2 (50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO2/HR-Si IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz).

Pumped shot noise in adiabatically modulated graphene-based double-barrier structures.

PubMed

Zhu, Rui; Lai, Maoli

2011-11-16

Quantum pumping processes are accompanied by considerable quantum noise. Based on the scattering approach, we investigated the pumped shot noise properties in adiabatically modulated graphene-based double-barrier structures. It is found that compared with the Poisson processes, the pumped shot noise is dramatically enhanced where the dc pumped current changes flow direction, which demonstrates the effect of the Klein paradox.

Pumped shot noise in adiabatically modulated graphene-based double-barrier structures

NASA Astrophysics Data System (ADS)

Zhu, Rui; Lai, Maoli

2011-11-01

Quantum pumping processes are accompanied by considerable quantum noise. Based on the scattering approach, we investigated the pumped shot noise properties in adiabatically modulated graphene-based double-barrier structures. It is found that compared with the Poisson processes, the pumped shot noise is dramatically enhanced where the dc pumped current changes flow direction, which demonstrates the effect of the Klein paradox.

Microwave Semiconductor Equipment Produced in Poland,

DTIC Science & Technology

1984-01-20

was started on varactors for parametric amplifiers, which took place in the Institute for Basic Problems of Technology of the PAN [1. The research unit...technology of varactors intended for parametric amplifiers and harmonic generators. As a result of this a series of types of germanium, silicon and gallium...arsenide varactors were produced [2-141. These varactors were used for example in Avia A and Avia B radar. The working out of the production of

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

NASA Astrophysics Data System (ADS)

Bhunia, Amit; Singh, Mohit Kumar; Galvão Gobato, Y.; Henini, Mohamed; Datta, Shouvik

2018-01-01

We investigated excitonic absorptions in a GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peaks of indirect excitons formed around the Γ-AlAs barrier. Unlike DC-photocurrent spectra, frequency dependent photocapacitance spectra interestingly red shift, sharpen up, and then decrease with increasing tunneling at higher biases. Such dissimilarities clearly point out that different exciton dynamics govern these two spectral measurements. We also argue why such quantum confined dipoles of indirect excitons can have thermodynamically finite probabilities to survive even at room temperature. Finally, our observations demonstrate that the photocapacitance technique, which was seldom used to detect excitons in the past, is useful for selective detection and experimental tuning of relatively small numbers (˜1011/cm2) of photo-generated indirect excitons having large effective dipole moments in this type of quasi-two dimensional heterostructures.

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, Brian W.; Hanak, Joseph J.

1986-01-01

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, B.W.; Hanak, J.J.

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells

NASA Astrophysics Data System (ADS)

Vaughn, Leslie G.

2006-04-01

AlxIn(1-x)AsySb(1-y) quaternary alloys have been used in Type I midwave infrared (MWIR) laser structures as barrier materials with InAs and InAsSb quantum wells. However, growth of these alloys has limited the application because of a large miscibility gap. In this research, quaternary films with compositions well into the miscibility gap (0 ≤ x ≤ 0.50) have been grown for the first time by molecular beam epitaxy (MBE) using a digital alloy technique. These films, lattice-matched to GaSb, have been characterized using double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM), and photoluminescence (PL). Results indicate uniform, single-phase, and highly crystalline films. Using PL data, the dependence of the quaternary bandgap on composition has been studied and fit to various theoretical models. Combining the quaternary bandgap equation with strain and quantum size effects, the wavelengths for strained InAsSb wells in AlInAsSb quaternary barriers are predicted and compared to measured values generated from PL experiments. The reasonable agreement of these experimental results with the theoretical model supports the assertion that the AlInAsSb/InAsSb material system is Type I and emits in the target wavelength range of 3.3-4.2 mum. PL spectra of AlInAsSb/InAsSb multiple quantum wells exhibit a substantial increase in intensity with increasing quaternary aluminum content. This is presumably due to increasing valence band offset and, therefore, to better hole confinement. A laser with this active region has been fabricated and tested. Under pulsed optical pumping conditions at 50K, the laser emitted light at ˜3.93 mum. Further work has been done using the digital alloy technique to add gallium to the quaternary alloy to produce an AlGaInAsSb quinary alloy lattice-matched to GaSb. This material is of specific interest for mid-infrared lasers because by adding the fifth element, gallium, the range of material properties is extended. There is

Coulomb Oscillations in a Gate-Controlled Few-Layer Graphene Quantum Dot.

PubMed

Song, Yipu; Xiong, Haonan; Jiang, Wentao; Zhang, Hongyi; Xue, Xiao; Ma, Cheng; Ma, Yulin; Sun, Luyan; Wang, Haiyan; Duan, Luming

2016-10-12

Graphene quantum dots could be an ideal host for spin qubits and thus have been extensively investigated based on graphene nanoribbons and etched nanostructures; however, edge and substrate-induced disorders severely limit device functionality. Here, we report the confinement of quantum dots in few-layer graphene with tunable barriers, defined by local strain and electrostatic gating. Transport measurements unambiguously reveal that confinement barriers are formed by inducing a band gap via the electrostatic gating together with local strain induced constriction. Numerical simulations according to the local top-gate geometry confirm the band gap opening by a perpendicular electric field. We investigate the magnetic field dependence of the energy-level spectra in these graphene quantum dots. Experimental results reveal a complex evolution of Coulomb oscillations with the magnetic field, featuring kinks at level crossings. The simulation of energy spectrum shows that the kink features and the magnetic field dependence are consistent with experimental observations, implying the hybridized nature of energy-level spectrum of these graphene quantum dots.

Quantum non-barking dogs

NASA Astrophysics Data System (ADS)

Imari Walker, Sara; Davies, Paul C. W.; Samantray, Prasant; Aharonov, Yakir

2014-06-01

Quantum weak measurements with states both pre- and post-selected offer a window into a hitherto neglected sector of quantum mechanics. A class of such systems involves time dependent evolution with transitions possible. In this paper we explore two very simple systems in this class. The first is a toy model representing the decay of an excited atom. The second is the tunneling of a particle through a barrier. The post-selection criteria are chosen as follows: at the final time, the atom remains in its initial excited state for the first example and the particle remains behind the barrier for the second. We then ask what weak values are predicted in the physical environment of the atom (to which no net energy has been transferred) and in the region beyond the barrier (to which the particle has not tunneled). Thus, just as the dog that didn't bark in Arthur Conan Doyle's story Silver Blaze gave Sherlock Holmes meaningful information about the dog's non-canine environment, here we probe whether the particle that has not decayed or has not tunneled can provide measurable information about physical changes in the environment. Previous work suggests that very large weak values might arise in these regions for long durations between pre- and post-selection times. Our calculations reveal some distinct differences between the two model systems.

Macroscopic quantum tunneling escape of Bose-Einstein condensates

NASA Astrophysics Data System (ADS)

Zhao, Xinxin; Alcala, Diego A.; McLain, Marie A.; Maeda, Kenji; Potnis, Shreyas; Ramos, Ramon; Steinberg, Aephraim M.; Carr, Lincoln D.

2017-12-01

Recent experiments on macroscopic quantum tunneling reveal a nonexponential decay of the number of atoms trapped in a quasibound state behind a potential barrier. Through both experiment and theory, we demonstrate this nonexponential decay results from interactions between atoms. Quantum tunneling of tens of thousands of 87Rb atoms in a Bose-Einstein condensate is modeled by a modified Jeffreys-Wentzel-Kramers-Brillouin model, taking into account the effective time-dependent barrier induced by the mean field. Three-dimensional Gross-Pitaevskii simulations corroborate a mean-field result when compared with experiments. However, with one-dimensional modeling using time-evolving block decimation, we present an effective renormalized mean-field theory that suggests many-body dynamics for which a bare mean-field theory may not apply.

A seven-degree-of-freedom, time-dependent quantum dynamics study on the energy efficiency in surmounting the central energy barrier of the OH + CH{sub 3} → O + CH{sub 4} reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Pengxiu; Wang, Yuping; Li, Yida

2015-04-28

A time-dependent, quantum reaction dynamics calculation with seven degrees of freedom was carried out to study the energy efficiency in surmounting the approximate center energy barrier of OH + CH{sub 3}. The calculation shows the OH vibration excitations greatly enhance the reactivity, whereas the vibrational excitations of CH{sub 3} and the rotational excitations hinder the reactivity. On the basis of equal amount of total energy, although this reaction has a slight early barrier, it is the OH vibrational energy that is the dominate force in promoting the reactivity, not the translational energy. The studies on both the forward O +more » CH{sub 4} and reverse OH + CH{sub 3} reactions demonstrate, for these central barrier reactions, a small change of the barrier location can significantly change the energy efficacy roles on the reactivity. The calculated rate constants agree with the experimental data.« less

Traceable quantum sensing and metrology relied up a quantum electrical triangle principle

NASA Astrophysics Data System (ADS)

Fang, Yan; Wang, Hengliang; Yang, Xinju; Wei, Jingsong

2016-11-01

Hybrid quantum state engineering in quantum communication and imaging1-2 needs traceable quantum sensing and metrology, which are especially critical to quantum internet3 and precision measurements4 that are important across all fields of science and technology-. We aim to set up a mode of traceable quantum sensing and metrology. We developed a method by specially transforming an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) into a conducting atomic force microscopy (C-AFM) with a feedback control loop, wherein quantum entanglement enabling higher precision was relied upon a set-point, a visible light laser beam-controlled an interferometer with a surface standard at z axis, diffractometers with lateral standards at x-y axes, four-quadrant photodiode detectors, a scanner and its image software, a phase-locked pre-amplifier, a cantilever with a kHz Pt/Au conducting tip, a double barrier tunneling junction model, a STM circuit by frequency modulation and a quantum electrical triangle principle involving single electron tunneling effect, quantum Hall effect and Josephson effect5. The average and standard deviation result of repeated measurements on a 1 nm height local micro-region of nanomedicine crystal hybrid quantum state engineering surface and its differential pA level current and voltage (dI/dV) in time domains by using C-AFM was converted into an international system of units: Siemens (S), an indicated value 0.86×10-12 S (n=6) of a relative standard uncertainty was superior over a relative standard uncertainty reference value 2.3×10-10 S of 2012 CODADA quantized conductance6. It is concluded that traceable quantum sensing and metrology is emerging.

Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

NASA Astrophysics Data System (ADS)

Nanni, Luca

2017-11-01

This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study's results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

Quantum temporal probabilities in tunneling systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anastopoulos, Charis, E-mail: anastop@physics.upatras.gr; Savvidou, Ntina, E-mail: ksavvidou@physics.upatras.gr

We study the temporal aspects of quantum tunneling as manifested in time-of-arrival experiments in which the detected particle tunnels through a potential barrier. In particular, we present a general method for constructing temporal probabilities in tunneling systems that (i) defines ‘classical’ time observables for quantum systems and (ii) applies to relativistic particles interacting through quantum fields. We show that the relevant probabilities are defined in terms of specific correlation functions of the quantum field associated with tunneling particles. We construct a probability distribution with respect to the time of particle detection that contains all information about the temporal aspects ofmore » the tunneling process. In specific cases, this probability distribution leads to the definition of a delay time that, for parity-symmetric potentials, reduces to the phase time of Bohm and Wigner. We apply our results to piecewise constant potentials, by deriving the appropriate junction conditions on the points of discontinuity. For the double square potential, in particular, we demonstrate the existence of (at least) two physically relevant time parameters, the delay time and a decay rate that describes the escape of particles trapped in the inter-barrier region. Finally, we propose a resolution to the paradox of apparent superluminal velocities for tunneling particles. We demonstrate that the idea of faster-than-light speeds in tunneling follows from an inadmissible use of classical reasoning in the description of quantum systems. -- Highlights: •Present a general methodology for deriving temporal probabilities in tunneling systems. •Treatment applies to relativistic particles interacting through quantum fields. •Derive a new expression for tunneling time. •Identify new time parameters relevant to tunneling. •Propose a resolution of the superluminality paradox in tunneling.« less

Quantum tunneling with friction

NASA Astrophysics Data System (ADS)

Tokieda, M.; Hagino, K.

2017-05-01

Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping

2015-07-21

Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another,more » however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.« less

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chiao-Yun; Li, Heng; Shih, Yang-Ta

2015-03-02

We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase themore » carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.« less

One-Dimensional Nature of InAs/InP Quantum Dashes Revealed by Scanning Tunneling Spectroscopy.

PubMed

Papatryfonos, Konstantinos; Rodary, Guillemin; David, Christophe; Lelarge, François; Ramdane, Abderrahim; Girard, Jean-Christophe

2015-07-08

We report on low-temperature cross-sectional scanning tunneling microscopy and spectroscopy on InAs(P)/InGaAsP/InP(001) quantum dashes, embedded in a diode-laser structure. The laser active region consists of nine InAs(P) quantum dash layers separated by the InGaAsP quaternary alloy barriers. The effect of the p-i-n junction built-in potential on the band structure has been evidenced and quantified on large-scale tunneling spectroscopic measurements across the whole active region. By comparing the tunneling current onset channels, a consistent energy shift has been measured in successive quantum dash or barrier layers, either for the ground state energy of similar-sized quantum dashes or for the conduction band edge of the barriers, corresponding to the band-bending slope. The extracted values are in good quantitative agreement with the theoretical band structure calculations, demonstrating the high sensitivity of this spectroscopic measurement to probe the electronic structure of individual nanostructures, relative to local potential variations. Furthermore, by taking advantage of the potential gradient, we compared the local density of states over successive quantum dash layers. We observed that it does not vanish while increasing energy, for any of the investigated quantum dashes, in contrast to what would be expected for discrete level zero-dimensional (0D) structures. In order to acquire further proof and fully address the open question concerning the quantum dash dimensionality nature, we focused on individual quantum dashes obtaining high-energy-resolution measurements. The study of the local density of states clearly indicates a 1D quantum-wirelike nature for these nanostructures whose electronic squared wave functions were subsequently imaged by differential conductivity mapping.

Significant Quantum Effects in Hydrogen Activation

DOE PAGES

Kyriakou, Georgios; Davidson, Erlend R. M.; Peng, Guowen; ...

2014-03-31

Dissociation of molecular hydrogen is an important step in a wide variety of chemical, biological, and physical processes. Due to the light mass of hydrogen, it is recognized that quantum effects are often important to its reactivity. However, understanding how quantum effects impact the reactivity of hydrogen is still in its infancy. Here, we examine this issue using a well-defined Pd/Cu(111) alloy that allows the activation of hydrogen and deuterium molecules to be examined at individual Pd atom surface sites over a wide range of temperatures. Experiments comparing the uptake of hydrogen and deuterium as a function of temperature revealmore » completely different behavior of the two species. The rate of hydrogen activation increases at lower sample temperature, whereas deuterium activation slows as the temperature is lowered. Density functional theory simulations in which quantum nuclear effects are accounted for reveal that tunneling through the dissociation barrier is prevalent for H 2 up to ~190 K and for D 2 up to ~140 K. Kinetic Monte Carlo simulations indicate that the effective barrier to H 2 dissociation is so low that hydrogen uptake on the surface is limited merely by thermodynamics, whereas the D 2 dissociation process is controlled by kinetics. These data illustrate the complexity and inherent quantum nature of this ubiquitous and seemingly simple chemical process. Here, examining these effects in other systems with a similar range of approaches may uncover temperature regimes where quantum effects can be harnessed, yielding greater control of bond-breaking processes at surfaces and uncovering useful chemistries such as selective bond activation or isotope separation.« less

Photoluminescence from narrow InAs-AlSb quantum wells

NASA Technical Reports Server (NTRS)

Brar, Berinder; Kroemer, Herbert; Ibbetson, James; English, John H.

1993-01-01

We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

Boundary conditions in tunneling via quantum hydrodynamics

NASA Technical Reports Server (NTRS)

Nassar, Antonio B.

1993-01-01

Via the hydrodynamical formulation of quantum mechanics, an approach to the problem of tunneling through sharp-edged potential barriers is developed. Above all, it is shown how more general boundary conditions follow from the continuity of mass, momentum, and energy.

Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Snider, Gregory

2000-03-01

Quantum-dot Cellular Automata (QCA) [1] is a promising architecture which employs quantum dots for digital computation. It is a revolutionary approach that holds the promise of high device density and low power dissipation. A basic QCA cell consists of four quantum dots coupled capacitively and by tunnel barriers. The cell is biased to contain two excess electrons within the four dots, which are forced to opposite "corners" of the four-dot cell by mutual Coulomb repulsion. These two possible polarization states of the cell will represent logic "0" and "1". Properly arranged, arrays of these basic cells can implement Boolean logic functions. Experimental results from functional QCA devices built of nanoscale metal dots defined by tunnel barriers will be presented. The experimental devices to be presented consist of Al islands, which we will call quantum dots, interconnected by tunnel junctions and lithographically defined capacitors. Aluminum/ aluminum-oxide/aluminum tunnel junctions were fabricated using a standard e-beam lithography and shadow evaporation technique. The experiments were performed in a dilution refrigerator at a temperature of 70 mK. The operation of a cell is evaluated by direct measurements of the charge state of dots within a cell as the input voltage is changed. The experimental demonstration of a functioning cell will be presented. A line of three cells demonstrates that there are no metastable switching states in a line of cells. A QCA majority gate will also be presented, which is a programmable AND/OR gate and represents the basic building block of QCA systems. The results of recent experiments will be presented. 1. C.S. Lent, P.D. Tougaw, W. Porod, and G.H. Bernstein, Nanotechnology, 4, 49 (1993).

Thermoelectric properties of periodic quantum structures in the Wigner-Rode formalism

NASA Astrophysics Data System (ADS)

Kommini, Adithya; Aksamija, Zlatan

2018-01-01

Improving the thermoelectric Seebeck coefficient, while simultaneously reducing thermal conductivity, is required in order to boost thermoelectric (TE) figure of merit (ZT). A common approach to improve the Seebeck coefficient is electron filtering where ‘cold’ (low energy) electrons are restricted from participating in transport by an energy barrier (Kim and Lundstrom 2011 J. Appl. Phys. 110 034511, Zide et al 2010 J. Appl. Phys. 108 123702). However, the impact of electron tunneling through thin barriers and resonant states on TE properties has been given less attention, despite the widespread use of quantum wells and superlattices (SLs) in TE applications. In our work, we develop a comprehensive transport model using the Wigner-Rode formalism. We include the full electronic bandstructure and all the relevant scattering mechanisms, allowing us to simulate both energy relaxation and quantum effects from periodic potential barriers. We study the impact of barrier shape on TE performance and find that tall, sharp barriers with small period lengths lead to the largest increase in both Seebeck coefficient and conductivity, thus boosting power factor and TE efficiency. Our findings are robust against additional elastic scattering such as atomic-scale roughness at side-walls of SL nanowires.

Metrology for industrial quantum communications: the MIQC project

NASA Astrophysics Data System (ADS)

Rastello, M. L.; Degiovanni, I. P.; Sinclair, A. G.; Kück, S.; Chunnilall, C. J.; Porrovecchio, G.; Smid, M.; Manoocheri, F.; Ikonen, E.; Kubarsepp, T.; Stucki, D.; Hong, K. S.; Kim, S. K.; Tosi, A.; Brida, G.; Meda, A.; Piacentini, F.; Traina, P.; Natsheh, A. Al; Cheung, J. Y.; Müller, I.; Klein, R.; Vaigu, A.

2014-12-01

The ‘Metrology for Industrial Quantum Communication Technologies’ project (MIQC) is a metrology framework that fosters development and market take-up of quantum communication technologies and is aimed at achieving maximum impact for the European industry in this area. MIQC is focused on quantum key distribution (QKD) technologies, the most advanced quantum-based technology towards practical application. QKD is a way of sending cryptographic keys with absolute security. It does this by exploiting the ability to encode in a photon's degree of freedom specific quantum states that are noticeably disturbed if an eavesdropper trying to decode it is present in the communication channel. The MIQC project has started the development of independent measurement standards and definitions for the optical components of QKD system, since one of the perceived barriers to QKD market success is the lack of standardization and quality assurance.

Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: zero magnetic field.

PubMed

Kushwaha, Manvir S

2011-09-28

We report on the theoretical investigation of the elementary electronic excitations in a quantum wire made up of vertically stacked self-assembled InAs/GaAs quantum dots. The length scales (of a few nanometers) involved in the experimental setups prompt us to consider an infinitely periodic system of two-dimensionally confined (InAs) quantum dot layers separated by GaAs spacers. The resultant quantum wire is characterized by a two-dimensional harmonic confining potential in the x-y plane and a periodic (Kronig-Penney) potential along the z (or the growth) direction within the tight-binding approximation. Since the wells and barriers are formed from two different materials, we employ the Bastard's boundary conditions in order to determine the eigenfunctions along the z direction. These wave functions are then used to generate the Wannier functions, which, in turn, constitute the legitimate Bloch functions that govern the electron dynamics along the direction of periodicity. Thus, the Bloch functions and the Hermite functions together characterize the whole system. We then make use of the Bohm-Pines' (full) random-phase approximation in order to derive a general nonlocal, dynamic dielectric function. Thus, developed theoretical framework is then specified to work within a (lowest miniband and) two-subband model that enables us to scrutinize the single-particle as well as collective responses of the system. We compute and discuss the behavior of the eigenfunctions, band-widths, density of states, Fermi energy, single-particle and collective excitations, and finally size up the importance of studying the inverse dielectric function in relation with the quantum transport phenomena. It is remarkable to notice how the variation in the barrier- and well-widths can allow us to tailor the excitation spectrum in the desired energy range. Given the advantage of the vertically stacked quantum dots over the planar ones and the foreseen applications in the single-electron devices

STM images and STS for a rectangular quantum corral constructed with δ-function barriers and the effect of an adsorbed atom on STM images and STS

NASA Astrophysics Data System (ADS)

Mitsuoka, Shigenori; Tamura, Akira

2012-04-01

Assuming that an electron confined by double δ-function barriers is in a quasi-stationary state, we derived eigenfunctions and eigenenergies of the electron. Applying this point of view to the electron confined in a rectangular quantum corral (QC), we obtained scanning tunneling microscopic (STM) images and scanning tunneling spectrum (STS). Our results are consistent with experimental ones, which confirms validity of the present model. Comparing with the treatment in which the corral potential is chosen to be of square-barrier type, the present treatment has an advantage that the eigenvalue equations are simple and the number of parameters that specify the potential barrier is only one except the bottom of the potential well. On the basis of a Dyson equation for the Green function we calculated STM images and STS of the QC having an adsorbed atom inside. Our results are consistent with experimental STM images and STS. In contrast to a previous viewpoint that the STS profile is reversed with that of the empty QC, we concluded the STS peaks of the adsorbed QC are shifted downward from those of the empty QC.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar

2015-09-15

Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottkymore » diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.« less

Tunable quantum well infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

NASA Astrophysics Data System (ADS)

Wang, Xing-Fu; Tong, Jin-Hui; Zhao, Bi-Jun; Chen, Xin; Ren, Zhi-Wei; Li, Dan-Wei; Zhuo, Xiang-Jing; Zhang, Jun; Yi, Han-Xiang; Li, Shu-Ti

2013-09-01

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

NASA Astrophysics Data System (ADS)

Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Hakkarainen, Teemu; Kivisaari, Pyry; Lyytikäinen, Jari; Aho, Arto; Tukiainen, Antti; Guina, Mircea; Oksanen, Jani

2017-02-01

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors.

PubMed

Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas

2016-10-20

Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.

Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

DTIC Science & Technology

2016-03-30

have recently implemented Josephson junction superconducting devices into qubits [1-6]. Before a multi -qubit quantum computer is realized, however...Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier* S Oh1,2, K Cicak1, R McDermott3, K B Cooper3, K D Osborn1, R W...growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are

Photon exchange and entanglement formation during transmission through a rectangular quantum barrier.

PubMed

Sulyok, Georg; Durstberger-Rennhofer, Katharina; Summhammer, Johann

2015-09-04

When a quantum particle traverses a rectangular potential created by a quantum field both photon exchange and entanglement between particle and field take place. We present the full analytic solution of the Schrödinger equation of the composite particle-field system allowing investigation of these phenomena in detail and comparison to the results of a classical field treatment. Besides entanglement formation, remarkable differences also appear with respect to the symmetry between energy emission and absorption, resonance effects and if the field initially occupies the vacuum state.

Graphene based quantum dots.

PubMed

Zhang, H G; Hu, H; Pan, Y; Mao, J H; Gao, M; Guo, H M; Du, S X; Greber, T; Gao, H-J

2010-08-04

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction

PubMed Central

Ang, Yee Sin; Ma, Zhongshui; Zhang, Chao

2015-01-01

Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of unequal strengths on its either sides. It is found that while the intra-spin tunneling probabilities remain unchanged, the inter-spin-subband tunneling probabilities of electrons crossing the barrier in one direction is unequal to that of the opposite direction. Hence, when the system is driven by an unbiased periodic force, a directional flow of electron current is generated. The scattering quantum ratchet in R2DEG is conceptually simple and is capable of converting a.c. driving force into a rectified current without the need of additional symmetry breaking mechanism or external magnetic field. PMID:25598490

Model of biological quantum logic in DNA.

PubMed

Mihelic, F Matthew

2013-08-02

The DNA molecule has properties that allow it to act as a quantum logic processor. It has been demonstrated that there is coherent conduction of electrons longitudinally along the DNA molecule through pi stacking interactions of the aromatic nucleotide bases, and it has also been demonstrated that electrons moving longitudinally along the DNA molecule are subject to a very efficient electron spin filtering effect as the helicity of the DNA molecule interacts with the spin of the electron. This means that, in DNA, electrons are coherently conducted along a very efficient spin filter. Coherent electron spin is held in a logically and thermodynamically reversible chiral symmetry between the C2-endo and C3-endo enantiomers of the deoxyribose moiety in each nucleotide, which enables each nucleotide to function as a quantum gate. The symmetry break that provides for quantum decision in the system is determined by the spin direction of an electron that has an orbital angular momentum that is sufficient to overcome the energy barrier of the double well potential separating the C2-endo and C3-endo enantiomers, and that enantiomeric energy barrier is appropriate to the Landauer limit of the energy necessary to randomize one bit of information.

Impenetrable barriers for positrons in neighbourhood of superheavy nuclei with Z>118

NASA Astrophysics Data System (ADS)

Neznamov, V. P.

2017-12-01

Analysis of quantum mechanical motion of charged half-spin particles in the repulsive Coulomb field results in that an impenetrable potential barrier not explored earlier was found. For a particle at rest with a reduced mass m, the barrier radius is equal to half classical radius: the barrier radius decreases with increase in the particle energy. For the stable and quasi-stable nuclei with Z > 118, presence of an impenetrable barrier as β +-decay leads to the existence of “traps” for positrons in the neighbourhood of nuclei and as Zcr ≃ 170 (with emission of electron-positron pairs by vacuum) leads to the existence of a quasi-constant source of annihilation quanta.

Quantum Accelerators for High-performance Computing Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S.; Britt, Keith A.; Mohiyaddin, Fahd A.

We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, themore » prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration.« less

Theory of chaos regularization of tunneling in chaotic quantum dots.

PubMed

Lee, Ming-Jer; Antonsen, Thomas M; Ott, Edward; Pecora, Louis M

2012-11-01

Recent numerical experiments of Pecora et al. [Phys. Rev. E 83, 065201 (2011)] have investigated tunneling between two-dimensional symmetric double wells separated by a tunneling barrier. The wells were bounded by hard walls and by the potential barrier which was created by a step increase from the zero potential within a well to a uniform barrier potential within the barrier region, which is a situation potentially realizable in the context of quantum dots. Numerical results for the splitting of energy levels between symmetric and antisymmetric eigenstates were calculated. It was found that the splittings vary erratically from state to state, and the statistics of these variations were studied for different well shapes with the fluctuation levels being much less in chaotic wells than in comparable nonchaotic wells. Here we develop a quantitative theory for the statistics of the energy level splittings for chaotic wells. Our theory is based on the random plane wave hypothesis of Berry. While the fluctuation statistics are very different for chaotic and nonchaotic well dynamics, we show that the mean splittings of differently shaped wells, including integrable and chaotic wells, are the same if their well areas and barrier parameters are the same. We also consider the case of tunneling from a single well into a region with outgoing quantum waves.

Far-infrared response of spherical quantum dots: Dielectric effects and the generalized Kohn's theorem

NASA Astrophysics Data System (ADS)

Movilla, J. L.; Planelles, J.

2007-05-01

The influence of the dielectric environment on the far-infrared (FIR) absorption spectra of two-electron spherical quantum dots is theoretically studied. Effective mass and envelope function approaches with realistic steplike confining potentials are used. Special attention is paid to absorptions that are induced by the electron-electron interaction. High confining barriers make the FIR absorption coefficients almost independent of the quantum dot dielectric environment. Low barrier heights and strong dielectric mismatches preserve the strong fundamental (Kohn) mode but yield the cancellation of excited absorptions, thus monitoring dielectrically induced phase transitions from volume to surface states.

Terahertz response in the quantum-Hall-effect regime of a quantum-well-based charge-sensitive infrared phototransistor

NASA Astrophysics Data System (ADS)

Nakagawa, Daisuke; Takizawa, Kazuhiro; Ikushima, Kenji; Kim, Sunmi; Patrashin, Mikhail; Hosako, Iwao; Komiyama, Susumu

2018-04-01

The characteristics of a charge-sensitive infrared phototransistor (CSIP) based on a GaAs/AlGaAs multiple quantum-well (QW) structure are studied under a magnetic field. In the CSIP, the upper QWs serve as a floating gate that is charged by photoexcitation. The photoinduced charges are detected using the resistance of the lowest QW conducting channel. The conducting channel exhibits the integer quantum Hall effect (QHE) in a perpendicular high magnetic field, yielding the magnetic field dependence of the terahertz (THz) response ΔR. We found two different features of ΔR. One is that ΔR switches sign across the QHE plateau, which is explained simply by an increased electron density in the conducting channel. The other feature is observed as an enhanced positive ΔR when a potential barrier is formed in the conducting channel. The latter mechanism can be interpreted as the promotion of edge/bulk scattering due to photoinduced charges. These findings suggest ways to enhance the THz response by using magnetic fields and potential barriers.

Gate-defined quantum confinement in suspended bilayer graphene

NASA Astrophysics Data System (ADS)

Allen, M. T.; Martin, J.; Yacoby, A.

2012-07-01

Quantum-confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum-confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that open a bandgap, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the energy gap induced by a perpendicular electric field and at B>0 using the quantum Hall ν=0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

On a Class of Hairy Square Barriers and Gamow Vectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez-Garcia, N.

The second order Darboux-Gamow transformation is applied to deform square one dimensional barriers in non-relativistic quantum mechanics. The initial and the new 'hairy' potentials have the same transmission probabilities (for the appropriate parameters). In general, new Gamow vectors are constructed as Darboux deformations of the initial ones.

A quantum theoretical approach to information processing in neural networks

NASA Astrophysics Data System (ADS)

Barahona da Fonseca, José; Barahona da Fonseca, Isabel; Suarez Araujo, Carmen Paz; Simões da Fonseca, José

2000-05-01

A reinterpretation of experimental data on learning was used to formulate a law on data acquisition similar to the Hamiltonian of a mechanical system. A matrix of costs in decision making specifies values attributable to a barrier that opposed to hypothesis formation about decision making. The interpretation of the encoding costs as frequencies of oscillatory phenomena leads to a quantum paradigm based in the models of photoelectric effect as well as of a particle against a potential barrier. Cognitive processes are envisaged as complex phenomena represented by structures linked by valence bounds. This metaphor is used to find some prerequisites to certain types of conscious experience as well as to find an explanation for some pathological distortions of cognitive operations as they are represented in the context of the isolobal model. Those quantum phenomena are understood as representing an analogue programming for specific special purpose computations. The formation of complex chemical structures within the context of isolobal theory is understood as an analog quantum paradigm for complex cognitive computations.

Quantum monodromy and quantum phase transitions in floppy molecules

NASA Astrophysics Data System (ADS)

Larese, Danielle

2012-10-01

A simple algebraic Hamiltonian has been used to explore the vibrational and rotational spectra of the skeletal bending modes of HCNO, BrCNO, NCNCS, and other "floppy" (quasi-linear or quasi-bent) molecules. These molecules have large-amplitude, low-energy bending modes and champagne-bottle potential surfaces, making them good candidates for observing quantum phase transitions (QPT). We describe the geometric phase transitions from bent to linear in these and other non-rigid molecules, quantitatively analyzing the spectroscopic signatures of ground state QPT, excited state QPT, and quantum monodromy. The algebraic framework is ideal for this work because of its small calculational effort yet robust results. Although these methods have historically found success with tri-and four-atomic molecules, we now address five-atomic and simple branched molecules such as CH3NCO and GeH3NCO. Extraction of potential functions are completed for several molecules, resulting in predictions of barriers to linearity and equilibrium bond angles.

Quantum-Sequencing: Biophysics of quantum tunneling through nucleic acids

NASA Astrophysics Data System (ADS)

Casamada Ribot, Josep; Chatterjee, Anushree; Nagpal, Prashant

2014-03-01

Tunneling microscopy and spectroscopy has extensively been used in physical surface sciences to study quantum tunneling to measure electronic local density of states of nanomaterials and to characterize adsorbed species. Quantum-Sequencing (Q-Seq) is a new method based on tunneling microscopy for electronic sequencing of single molecule of nucleic acids. A major goal of third-generation sequencing technologies is to develop a fast, reliable, enzyme-free single-molecule sequencing method. Here, we present the unique ``electronic fingerprints'' for all nucleotides on DNA and RNA using Q-Seq along their intrinsic biophysical parameters. We have analyzed tunneling spectra for the nucleotides at different pH conditions and analyzed the HOMO, LUMO and energy gap for all of them. In addition we show a number of biophysical parameters to further characterize all nucleobases (electron and hole transition voltage and energy barriers). These results highlight the robustness of Q-Seq as a technique for next-generation sequencing.

Heralded quantum steering over a high-loss channel.

PubMed

Weston, Morgan M; Slussarenko, Sergei; Chrzanowski, Helen M; Wollmann, Sabine; Shalm, Lynden K; Verma, Varun B; Allman, Michael S; Nam, Sae Woo; Pryde, Geoff J

2018-01-01

Entanglement is the key resource for many long-range quantum information tasks, including secure communication and fundamental tests of quantum physics. These tasks require robust verification of shared entanglement, but performing it over long distances is presently technologically intractable because the loss through an optical fiber or free-space channel opens up a detection loophole. We design and experimentally demonstrate a scheme that verifies entanglement in the presence of at least 14.8 ± 0.1 dB of added loss, equivalent to approximately 80 km of telecommunication fiber. Our protocol relies on entanglement swapping to herald the presence of a photon after the lossy channel, enabling event-ready implementation of quantum steering. This result overcomes the key barrier in device-independent communication under realistic high-loss scenarios and in the realization of a quantum repeater.

Heralded quantum steering over a high-loss channel

PubMed Central

Weston, Morgan M.; Slussarenko, Sergei; Chrzanowski, Helen M.; Wollmann, Sabine; Shalm, Lynden K.; Verma, Varun B.; Allman, Michael S.; Nam, Sae Woo; Pryde, Geoff J.

2018-01-01

Entanglement is the key resource for many long-range quantum information tasks, including secure communication and fundamental tests of quantum physics. These tasks require robust verification of shared entanglement, but performing it over long distances is presently technologically intractable because the loss through an optical fiber or free-space channel opens up a detection loophole. We design and experimentally demonstrate a scheme that verifies entanglement in the presence of at least 14.8 ± 0.1 dB of added loss, equivalent to approximately 80 km of telecommunication fiber. Our protocol relies on entanglement swapping to herald the presence of a photon after the lossy channel, enabling event-ready implementation of quantum steering. This result overcomes the key barrier in device-independent communication under realistic high-loss scenarios and in the realization of a quantum repeater. PMID:29322093

Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, A. A., E-mail: azhukov@issp.ac.ru; Volk, Ch.; Winden, A.

We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots onmore » a decrease of the negative differential conductance is investigated in detail.« less

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

NASA Astrophysics Data System (ADS)

Albo, Asaf; Flores, Yuri V.; Hu, Qing; Reno, John L.

2017-09-01

The mechanisms that limit the temperature performance of diagonal GaAs/Al0.15GaAs0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure. We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Moreover, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.

Quantum scattering in one-dimensional systems satisfying the minimal length uncertainty relation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernardo, Reginald Christian S., E-mail: rcbernardo@nip.upd.edu.ph; Esguerra, Jose Perico H., E-mail: jesguerra@nip.upd.edu.ph

In quantum gravity theories, when the scattering energy is comparable to the Planck energy the Heisenberg uncertainty principle breaks down and is replaced by the minimal length uncertainty relation. In this paper, the consequences of the minimal length uncertainty relation on one-dimensional quantum scattering are studied using an approach involving a recently proposed second-order differential equation. An exact analytical expression for the tunneling probability through a locally-periodic rectangular potential barrier system is obtained. Results show that the existence of a non-zero minimal length uncertainty tends to shift the resonant tunneling energies to the positive direction. Scattering through a locally-periodic potentialmore » composed of double-rectangular potential barriers shows that the first band of resonant tunneling energies widens for minimal length cases when the double-rectangular potential barrier is symmetric but narrows down when the double-rectangular potential barrier is asymmetric. A numerical solution which exploits the use of Wronskians is used to calculate the transmission probabilities through the Pöschl–Teller well, Gaussian barrier, and double-Gaussian barrier. Results show that the probability of passage through the Pöschl–Teller well and Gaussian barrier is smaller in the minimal length cases compared to the non-minimal length case. For the double-Gaussian barrier, the probability of passage for energies that are more positive than the resonant tunneling energy is larger in the minimal length cases compared to the non-minimal length case. The approach is exact and applicable to many types of scattering potential.« less

Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

PubMed

Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

2012-10-01

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

High quality factor graphene varactors for wireless sensing applications

NASA Astrophysics Data System (ADS)

Koester, Steven J.

2011-10-01

A graphene wireless sensor concept is described. By utilizing thin gate dielectrics, the capacitance in a metal-insulator-graphene structure varies with charge concentration through the quantum capacitance effect. Simulations using realistic structural and transport parameters predict quality factors, Q, >60 at 1 GHz. When placed in series with an ideal inductor, a resonant frequency tuning ratio of 25% (54%) is predicted for sense charge densities ranging from 0.32 to 1.6 μC/cm2 at an equivalent oxide thickness of 2.0 nm (0.5 nm). The resonant frequency has a temperature sensitivity, df/dT, less than 0.025%/K for sense charge densities >0.32 μC/cm2.

Relativistic quantum Darwinism in Dirac fermion and graphene systems

NASA Astrophysics Data System (ADS)

Ni, Xuan; Huang, Liang; Lai, Ying-Cheng; Pecora, Louis

2012-02-01

We solve the Dirac equation in two spatial dimensions in the setting of resonant tunneling, where the system consists of two symmetric cavities connected by a finite potential barrier. The shape of the cavities can be chosen to yield both regular and chaotic dynamics in the classical limit. We find that certain pointer states about classical periodic orbits can exist, which are signatures of relativistic quantum Darwinism (RQD). These localized states suppress quantum tunneling, and the effect becomes less severe as the underlying classical dynamics in the cavity is chaotic, leading to regularization of quantum tunneling. Qualitatively similar phenomena have been observed in graphene. A physical theory is developed to explain relativistic quantum Darwinism and its effects based on the spectrum of complex eigenenergies of the non-Hermitian Hamiltonian describing the open cavity system.

Millimeter-Wave Voltage-Controlled Oscillators in 0.13-micrometer CMOS Technology

DTIC Science & Technology

2006-06-01

controlled oscillators. Varactor , transistor, and in- ductor designs are optimized to reduce the parasitic capacitances. An investigation of tradeoff between...quality factor and tuning range for MOS varactors at 24 GHz has shown that the polysilicon gate lengths between 0.18 and 0.24 m result both good...millimeter wave, MOS varactor , quality factor, transmission line, voltage-controlled oscillator (VCO). I. INTRODUCTION WITH THE RAPID advance of high

Quantum ballistic transport in strained epitaxial germanium

NASA Astrophysics Data System (ADS)

Gul, Y.; Holmes, S. N.; Newton, P. J.; Ellis, D. J. P.; Morrison, C.; Pepper, M.; Barnes, C. H. W.; Myronov, M.

2017-12-01

Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.

Quantum Monte Carlo Studies of Interaction-Induced Localization in Quantum Dots and Wires

NASA Astrophysics Data System (ADS)

Devrim Güçlü, A.

2009-03-01

We investigate interaction-induced localization of electrons in both quantum dots and inhomogeneous quantum wires using variational and diffusion quantum Monte Carlo methods. Quantum dots and wires are highly tunable systems that enable the study of the physics of strongly correlated electrons. With decreasing electronic density, interactions become stronger and electrons are expected to localize at their classical positions, as in Wigner crystallization in an infinite 2D system. (1) Dots: We show that the addition energy shows a clear progression from features associated with shell structure to those caused by commensurability of a Wigner crystal. This cross-over is, then, a signature of localization; it occurs near rs˜20. For higher values of rs, the configuration symmetry of the quantum dot becomes fully consistent with the classical ground state. (2) Wires: We study an inhomogeneous quasi-one-dimensional system -- a wire with two regions, one at low density and the other high. We find that strong localization occurs in the low density quantum point contact region as the gate potential is increased. The nature of the transition from high to low density depends on the density gradient -- if it is steep, a barrier develops between the two regions, causing Coulomb blockade effects. We find no evidence for ferromagnetic spin polarization for the range of parameters studied. The picture emerging here is in good agreement with the experimental measurements of tunneling between two wires. Collaborators: C. J. Umrigar (Cornell), Hong Jiang (Fritz Haber Institut), Amit Ghosal (IISER Calcutta), and H. U. Baranger (Duke).

Trajectories and traversal times in quantum tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zhi Hong.

1989-01-01

The classical concepts of trajectories and traversal times applied to quantum tunneling are discussed. By using the Wentzel-Kramers-Brillouin approximation, it is found that in a forbidden region of a multidimensional space the wave function can be described by two sets of trajectories, or equivalently by two sets of wave fronts. The trajectories belonging to different sets are mutually orthogonal. An extended Huygens construction is proposed to determine these wave fronts and trajectories. In contrast to the classical results in the allowed region, these trajectories couple to each other. However, if the incident wave is normal to the turning surface, themore » trajectories are found to be independent and can be determined by Newton's equations of motion with inverted potential and energy. The multidimensional tunneling theory is then applied to the scanning tunneling microscope to calculate the current density distribution and to derive the expressions for the lateral resolution and the surface corrugation amplitude. The traversal time in quantum tunneling, i.e. tunneling time, is found to depend on model calculations and simulations. Computer simulation of a wave packet tunneling through a square barrier is performed. Several approaches, including the phase method, Larmor clock, and time-dependent barrier model, are investigated. For a square barrier, two characteristic times are found: One is equal to the barrier width divided by the magnitude of the imaginary velocity; the other is equal to the decay length divided by the incident velocity. It is believed that the tunneling time can only be defined operationally.« less

Interferometry of Klein tunnelling electrons in graphene quantum rings

NASA Astrophysics Data System (ADS)

de Sousa, D. J. P.; Chaves, Andrey; Pereira, J. M.; Farias, G. A.

2017-01-01

We theoretically study a current switch that exploits the phase acquired by a charge carrier as it tunnels through a potential barrier in graphene. The system acts as an interferometer based on an armchair graphene quantum ring, where the phase difference between interfering electronic wave functions for each path can be controlled by tuning either the height or the width of a potential barrier in the ring arms. By varying the parameters of the potential barriers, the interference can become completely destructive. We demonstrate how this interference effect can be used for developing a simple graphene-based logic gate with a high on/off ratio.

Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

NASA Astrophysics Data System (ADS)

Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

2006-09-01

Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

NASA Astrophysics Data System (ADS)

Samanta, Arup; Muruganathan, Manoharan; Hori, Masahiro; Ono, Yukinori; Mizuta, Hiroshi; Tabe, Michiharu; Moraru, Daniel

2017-02-01

Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for functionality at the atomic level with one-by-one control of electrons. However, single-electron effects in donor-atom devices have only been observed at low temperatures mainly due to the low tunnel barriers. If a few donor-atoms are closely coupled as a molecule to form a quantum dot, the ground-state energy level is significantly deepened, leading to higher tunnel barriers. Here, we demonstrate that such an a-few-donor quantum dot, formed by selective conventional doping of phosphorus (P) donors in a Si nano-channel, sustains Coulomb blockade behavior even at room temperature. In this work, such a quantum dot is formed by 3 P-donors located near the center of the selectively-doped area, which is consistent with a statistical analysis. This finding demonstrates practical conditions for atomic- and molecular-level electronics based on donor-atoms in silicon nanodevices.

Ex post manipulation of barriers in InGaAs tunnel injection devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talalaev, Vadim G.; Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504; Cirlin, George E.

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

Density matrix Monte Carlo modeling of quantum cascade lasers

NASA Astrophysics Data System (ADS)

Jirauschek, Christian

2017-10-01

By including elements of the density matrix formalism, the semiclassical ensemble Monte Carlo method for carrier transport is extended to incorporate incoherent tunneling, known to play an important role in quantum cascade lasers (QCLs). In particular, this effect dominates electron transport across thick injection barriers, which are frequently used in terahertz QCL designs. A self-consistent model for quantum mechanical dephasing is implemented, eliminating the need for empirical simulation parameters. Our modeling approach is validated against available experimental data for different types of terahertz QCL designs.

Anomalous electron collimation in HgTe quantum wells with inverted band structure.

PubMed

Zou, Y L; Zhang, L B; Song, J T

2013-02-20

We investigate the electron collimation behavior in HgTe quantum wells (QWs) with a magnetic-electric barrier induced by a ferromagnetic metal stripe. We find that electrons can transmit perfectly through the magnetic-electric barrier at some specific incidence angles. These angles can be controlled by the tuning gate voltage, local magnetic field and Fermi energy of incident electrons in QWs with appropriate barrier length. This collimation feature can be used to construct momentum filters in HgTe QWs and has potential application in nanodevices.

Phononic properties of superlattices and multi quantum well heterostructures (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wagner, Markus R.; Reparaz, Juan Sebastian; Callsen, Gordon; Nippert, Felix; Kure, Thomas; Hoffmann, Axel; Hugues, Maxime; Teysseire, Monique; Damilano, Benjamin; Chauveau, Jean-Michel

2017-03-01

We address the electronic, phononic, and thermal properties of oxide based superlattices and multi quantum well heterostructures. In the first part, we review the present understanding of phonon coupling and phonon propagation in superlattices and elucidate current research aspects of phonon coherence in these structure. Subsequently, we focus on the experimental study of MBE grown ZnO/ZnMgO multi quantum well heterostructures with varying Mg content, barrier thickness, quantum well thickness, and number of periods. In particular, we discuss how the controlled variation of these parameters affect the phonon dispersion relation and phonon propagation and their impact on the thermal properties.

Scaling analysis and instantons for thermally assisted tunneling and quantum Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Jiang, Zhang; Smelyanskiy, Vadim N.; Isakov, Sergei V.; Boixo, Sergio; Mazzola, Guglielmo; Troyer, Matthias; Neven, Hartmut

2017-01-01

We develop an instantonic calculus to derive an analytical expression for the thermally assisted tunneling decay rate of a metastable state in a fully connected quantum spin model. The tunneling decay problem can be mapped onto the Kramers escape problem of a classical random dynamical field. This dynamical field is simulated efficiently by path-integral quantum Monte Carlo (QMC). We show analytically that the exponential scaling with the number of spins of the thermally assisted quantum tunneling rate and the escape rate of the QMC process are identical. We relate this effect to the existence of a dominant instantonic tunneling path. The instanton trajectory is described by nonlinear dynamical mean-field theory equations for a single-site magnetization vector, which we solve exactly. Finally, we derive scaling relations for the "spiky" barrier shape when the spin tunneling and QMC rates scale polynomially with the number of spins N while a purely classical over-the-barrier activation rate scales exponentially with N .

Simulation and optimization of deep violet InGaN double quantum well laser

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.

2012-03-01

The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.

Quantum Ultra-Walks: Walks on a Line with Spatial Disorder

NASA Astrophysics Data System (ADS)

Boettcher, Stefan; Falkner, Stefan

We discuss the model of a heterogeneous discrete-time walk on a line with spatial disorder in the form of a set of ultrametric barriers. Simulations show that such an quantum ultra-walk spreads with a walk exponent dw that ranges from ballistic (dw = 1) to complete confinement (dw = ∞) for increasing separation 1 <= 1 / ɛ < ∞ in barrier heights. We develop a formalism by which the classical random walk as well as the quantum walk can be treated in parallel using a coined walk with internal degrees of freedom. For the random walk, this amounts to a 2nd -order Markov process with a stochastic coin, better know as an (anti-)persistent walk. The exact analysis, based on the real-space renormalization group (RG), reproduces the results of the well-known model of ``ultradiffusion,'' dw = 1 -log2 ɛ for 0 < ɛ <= 1 / 2 . However, while the evaluation of the RG fixed-points proceeds virtually identical, for the corresponding quantum walk with a unitary coin it fails to reproduce the numerical results. A new way to analyze the RG is indicated. Supported by NSF-DMR 1207431.

Phase space theory of evaporation in neon clusters: the role of quantum effects.

PubMed

Calvo, F; Parneix, P

2009-12-31

Unimolecular evaporation of neon clusters containing between 14 and 148 atoms is theoretically investigated in the framework of phase space theory. Quantum effects are incorporated in the vibrational densities of states, which include both zero-point and anharmonic contributions, and in the possible tunneling through the centrifugal barrier. The evaporation rates, kinetic energy released, and product angular momentum are calculated as a function of excess energy or temperature in the parent cluster and compared to the classical results. Quantum fluctuations are found to generally increase both the kinetic energy released and the angular momentum of the product, but the effects on the rate constants depend nontrivially on the excess energy. These results are interpreted as due to the very few vibrational states available in the product cluster when described quantum mechanically. Because delocalization also leads to much narrower thermal energy distributions, the variations of evaporation observables as a function of canonical temperature appear much less marked than in the microcanonical ensemble. While quantum effects tend to smooth the caloric curve in the product cluster, the melting phase change clearly keeps a signature on these observables. The microcanonical temperature extracted from fitting the kinetic energy released distribution using an improved Arrhenius form further suggests a backbending in the quantum Ne(13) cluster that is absent in the classical system. Finally, in contrast to delocalization effects, quantum tunneling through the centrifugal barrier does not play any appreciable role on the evaporation kinetics of these rather heavy clusters.

Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots

DTIC Science & Technology

2002-01-01

an ensemble of self -assembled InAs/GaAs or InAs/InP quantum dots (QDs) are typically in the range of 10-30 monolayers [1]. Here, we report on InAs...photoconductive properties of QDIPs based on self organized InAs quantum dots grown on In.52Al.48As/InP(100), using the MBE technique. Dr. Gendry grew the...composed of 10 layers of self assembled InAs dots, separated by 500 Å thick InAlAs (lattice matched to the semi-insulating InP substrate) barrier

Photodissociation of ultracold diatomic strontium molecules with quantum state control.

PubMed

McDonald, M; McGuyer, B H; Apfelbeck, F; Lee, C-H; Majewska, I; Moszynski, R; Zelevinsky, T

2016-07-07

Chemical reactions at ultracold temperatures are expected to be dominated by quantum mechanical effects. Although progress towards ultracold chemistry has been made through atomic photoassociation, Feshbach resonances and bimolecular collisions, these approaches have been limited by imperfect quantum state selectivity. In particular, attaining complete control of the ground or excited continuum quantum states has remained a challenge. Here we achieve this control using photodissociation, an approach that encodes a wealth of information in the angular distribution of outgoing fragments. By photodissociating ultracold (88)Sr2 molecules with full control of the low-energy continuum, we access the quantum regime of ultracold chemistry, observing resonant and nonresonant barrier tunnelling, matter-wave interference of reaction products and forbidden reaction pathways. Our results illustrate the failure of the traditional quasiclassical model of photodissociation and instead are accurately described by a quantum mechanical model. The experimental ability to produce well-defined quantum continuum states at low energies will enable high-precision studies of long-range molecular potentials for which accurate quantum chemistry models are unavailable, and may serve as a source of entangled states and coherent matter waves for a wide range of experiments in quantum optics.

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

NASA Astrophysics Data System (ADS)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

DOE PAGES

Albo, Asaf; Flores, Yuri V.; Hu, Qing; ...

2017-09-11

The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albo, Asaf; Flores, Yuri V.; Hu, Qing

The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

Bound magnetic polaron in a semimagnetic double quantum well

NASA Astrophysics Data System (ADS)

Kalpana, P.; Jayakumar, K.

2017-09-01

The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

GaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

PubMed

Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

2016-03-03

We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge transport through DNA based electronic barriers

NASA Astrophysics Data System (ADS)

Patil, Sunil R.; Chawda, Vivek; Qi, Jianqing; Anantram, M. P.; Sinha, Niraj

2018-05-01

We report charge transport in electronic 'barriers' constructed by sequence engineering in DNA. Considering the ionization potentials of Thymine-Adenine (AT) and Guanine-Cytosine (GC) base pairs, we treat AT as 'barriers'. The effect of DNA conformation (A and B form) on charge transport is also investigated. Particularly, the effect of width of 'barriers' on hole transport is investigated. Density functional theory (DFT) calculations are performed on energy minimized DNA structures to obtain the electronic Hamiltonian. The quantum transport calculations are performed using the Landauer-Buttiker framework. Our main findings are contrary to previous studies. We find that a longer A-DNA with more AT base pairs can conduct better than shorter A-DNA with a smaller number of AT base pairs. We also find that some sequences of A-DNA can conduct better than a corresponding B-DNA with the same sequence. The counterions mediated charge transport and long range interactions are speculated to be responsible for counter-intuitive length and AT content dependence of conductance of A-DNA.

Quantum tunneling of oxygen atoms on very cold surfaces.

PubMed

Minissale, M; Congiu, E; Baouche, S; Chaabouni, H; Moudens, A; Dulieu, F; Accolla, M; Cazaux, S; Manicó, G; Pirronello, V

2013-08-02

Any evolving system can change state via thermal mechanisms (hopping a barrier) or via quantum tunneling. Most of the time, efficient classical mechanisms dominate at high temperatures. This is why an increase of the temperature can initiate the chemistry. We present here an experimental investigation of O-atom diffusion and reactivity on water ice. We explore the 6-25 K temperature range at submonolayer surface coverages. We derive the diffusion temperature law and observe the transition from quantum to classical diffusion. Despite the high mass of O, quantum tunneling is efficient even at 6 K. As a consequence, the solid-state astrochemistry of cold regions should be reconsidered and should include the possibility of forming larger organic molecules than previously expected.

Two-dimensional electron gas in monolayer InN quantum wells

DOE PAGES

Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

2014-11-24

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Larmor precession and barrier tunneling time of a neutral spinning particle

NASA Astrophysics Data System (ADS)

Li, Zhi-Jian; Liang, J. Q.; Kobe, D. H.

2001-10-01

The Larmor precession of a neutral spinning particle in a magnetic field confined to the region of a one-dimensional rectangular barrier is investigated for both a nonrelativistic and a relativistic incoming particle. The spin precession serves as a clock to measure the time spent by a quantum particle traversing a potential barrier. With the help of a general spin coherent state it is explicitly shown that the precession time is equal to the dwell time in both the nonrelativistic and relativistic cases. We also present a numerical estimation of the precession time showing an apparent superluminal tunneling.

Mitigating Oscillator Pulling Due To Magnetic Coupling in Monolithic Mixed-Signal Radio-Frequency Integrated Circuits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobering, Ian David

2014-01-01

An analysis of frequency pulling in a varactor-tuned LC VCO under coupling from an on-chip PA is presented. The large-signal behavior of the VCO's inversion-mode MOS varactors is outlined, and the susceptibility of the VCO to frequency pulling from PA aggressor signals with various modulation schemes is discussed. We show that if the aggressor signal is aperiodic, band-limited, or amplitude-modulated, the varactor-tuned LC VCO will experience frequency pulling due to time-modulation of the varactor capacitance. However, if the aggressor signal has constant-envelope phase modulation, VCO pulling can be eliminated, even in the presence of coupling, through careful choice of VCOmore » frequency and divider ratio. Additional mitigation strategies, including new inductor topologies and system-level architectural choices, are also examined.« less

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

NASA Technical Reports Server (NTRS)

Elabd, H.; Villani, T. S.; Tower, J. R.

1982-01-01

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

2000-01-01

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Detection of non-Gaussian fluctuations in a quantum point contact.

PubMed

Gershon, G; Bomze, Yu; Sukhorukov, E V; Reznikov, M

2008-07-04

An experimental study of current fluctuations through a tunable transmission barrier, a quantum point contact, is reported. We measure the probability distribution function of transmitted charge with precision sufficient to extract the first three cumulants. To obtain the intrinsic quantities, corresponding to voltage-biased barrier, we employ a procedure that accounts for the response of the external circuit and the amplifier. The third cumulant, obtained with a high precision, is found to agree with the prediction for the statistics of transport in the non-Poissonian regime.

Detection of Non-Gaussian Fluctuations in a Quantum Point Contact

NASA Astrophysics Data System (ADS)

Gershon, G.; Bomze, Yu.; Sukhorukov, E. V.; Reznikov, M.

2008-07-01

An experimental study of current fluctuations through a tunable transmission barrier, a quantum point contact, is reported. We measure the probability distribution function of transmitted charge with precision sufficient to extract the first three cumulants. To obtain the intrinsic quantities, corresponding to voltage-biased barrier, we employ a procedure that accounts for the response of the external circuit and the amplifier. The third cumulant, obtained with a high precision, is found to agree with the prediction for the statistics of transport in the non-Poissonian regime.

Theoretical study of polarization dependence of carrier-induced refractive index change of quantum dot.

PubMed

Miao, Qingyuan; Yang, Ziyi; Dong, Jianji; He, Ping-An; Huang, Dexiu

2018-02-05

The influences of dot material component, barrier material component, aspect ratio and carrier density on the refractive index changes of TE mode and TM mode of columnar quantum dot are analyzed, and a multiparameter adjustment method is proposed to realize low polarization dependence of refractive index change. Then the quantum dots with low polarization dependence of refractive index change (<1.5%) within C-band (1530 nm - 1565 nm) are designed, and it shows that quantum dots with different material parameters are anticipated to have similar characteristics of low polarization dependence.

Proton Conductivity in Phosphoric Acid: The Role of Quantum Effects

DOE PAGES

Heres, M.; Wang, Y.; Griffin, P. J.; ...

2016-10-07

Phosphoric acid has one of the highest intrinsic proton conductivities of any known liquids, and the mechanism of this exceptional conductivity remains a puzzle. In our detailed experimental studies we discovered a strong isotope effect in the conductivity of phosphoric acids caused by (i) a strong isotope shift of the glass transition temperature and (ii) a significant reduction of the energy barrier by zero-point quantum fluctuations. Our results suggest that the high conductivity in phosphoric acids is caused by a very efficient proton transfer mechanism, which is strongly assisted by quantum effects.

Electronically controlled spoof localized surface plasmons on the corrugated ring with a shorting pin

NASA Astrophysics Data System (ADS)

Zhang, Chao; Zhou, Yong Jin

2018-07-01

We have demonstrated that spoof localized surface plasmons (LSPs) can be controlled by loading a shorting pin into the corrugated ring resonator in the microwave and terahertz (THz) frequencies. Electronical switchability and tunability of spoof LSPs have been achieved by mounting Schottky barrier diodes and varactor diodes across the slit around the shorting pin in the ground plane. An electronically tunable band-pass filter has been demostrated in the microwave frequencies. Such electronically controlled spoof LSPs devices can find more applications for highly integrated plasmonic circuits in microwave and THz frequencies.

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallacher, K.; Millar, R. W.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk

2016-02-29

Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

2000-01-01

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Tunable microstrip SQUID amplifiers for the Gen 2 Axion Dark Matter eXperiment (ADMX)

NASA Astrophysics Data System (ADS)

O'Kelley, Sean; Hilton, Gene; Clarke, John; ADMX Collaboration

2016-03-01

We present a series of tunable microstrip SQUID (Superconducting Quantum Interference Device) amplifiers (MSAs) for installation in ADMX. The axion dark matter candidate is detected via Primakoff conversion to a microwave photon in a high-Q (~100,000) tunable microwave cavity cooled with a dilution refrigerator in a 7-tesla magnetic field. The microwave photon frequency ν is a function of the unknown axion mass, so both the cavity and amplifier must be scanned over a wide frequency range. An MSA is a linear, phase-preserving amplifier consisting of a square washer loop, fabricated from a thin Nb film, incorporating two Josephson tunnel junctions with resistive shunts to prevent hysteresis. The input is coupled via a microstrip made from a square Nb coil deposited over the washer with an intervening insulating layer. Tunability is achieved by terminating the microstrip with GaAs varactors that operate below 100 mK. By varying the varactor capacitance with a bias voltage, the resonant frequency is varied by up to a factor of 2. We demonstrate several devices operating below 100 mK, matched to the discrete operating bands of ADMX at frequencies ranging from 560 MHz to 1 GHz. The MSAs exhibit gains exceeding 20 dB and the associated noise temperatures, measured with a hot/cold load, approach the standard quantum limit (hν/kB) . Supported by DOE Grants DE - FG02 - 97ER41029, DE - FG02 - 96ER40956, DE - AC52 - 07NA27344, DE - AC03 - 76SF00098, and the Livermore LDRD program.

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Efficient hydrogen isotopologues separation through a tunable potential barrier: The case of a C2N membrane.

PubMed

Qu, Yuanyuan; Li, Feng; Zhao, Mingwen

2017-05-03

Isotopes separation through quantum sieving effect of membranes is quite promising for industrial applications. For the light hydrogen isotopologues (eg. H 2 , D 2 ), the confinement of potential wells in porous membranes to isotopologues was commonly regarded to be crucial for highly efficient separation ability. Here, we demonstrate from first-principles that a potential barrier is also favorable for efficient hydrogen isotopologues separation. Taking an already-synthesized two-dimensional carbon nitride (C 2 N-h2D) as an example, we predict that the competition between quantum tunneling and zero-point-energy (ZPE) effects regulated by the tensile strain leads to high selectivity and permeance. Both kinetic quantum sieving and equilibrium quantum sieving effects are considered. The quantum effects revealed in this work offer a prospective strategy for highly efficient hydrogen isotopologues separation.

Monte Carlo Simulation of THz Multipliers

NASA Technical Reports Server (NTRS)

East, J.; Blakey, P.

1997-01-01

Schottky Barrier diode frequency multipliers are critical components in submillimeter and Thz space based earth observation systems. As the operating frequency of these multipliers has increased, the agreement between design predictions and experimental results has become poorer. The multiplier design is usually based on a nonlinear model using a form of harmonic balance and a model for the Schottky barrier diode. Conventional voltage dependent lumped element models do a poor job of predicting THz frequency performance. This paper will describe a large signal Monte Carlo simulation of Schottky barrier multipliers. The simulation is a time dependent particle field Monte Carlo simulation with ohmic and Schottky barrier boundary conditions included that has been combined with a fixed point solution for the nonlinear circuit interaction. The results in the paper will point out some important time constants in varactor operation and will describe the effects of current saturation and nonlinear resistances on multiplier operation.

Two-dimensional profiling of carriers in terahertz quantum cascade lasers using calibrated scanning spreading resistance microscopy and scanning capacitance microscopy.

PubMed

Dhar, R S; Ban, D

2013-07-01

The distribution of charge carriers inside the active region of a terahertz (THz) quantum cascade laser (QCL) has been measured with scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). Individual quantum well-barrier modules with a 35.7-nm single module thickness in the active region of the device have been resolved for the first time using high-resolution SSRM and SCM techniques at room temperature. SSRM and SCM measurements on the quantum well-barrier structure were calibrated utilizing known GaAs dopant staircase samples. Doping concentrations derived from SSRM and SCM measurements were found to be in quantitative agreement with the designed average doping values of the n-type active region in the terahertz quantum cascade laser. The secondary ion mass spectroscopy provides a partial picture of internal device parameters, and we have demonstrated with our results the efficacy of uniting calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional terahertz quantum cascade laser devices. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

A double barrier memristive device

PubMed Central

Hansen, M.; Ziegler, M.; Kolberg, L.; Soni, R.; Dirkmann, S.; Mussenbrock, T.; Kohlstedt, H.

2015-01-01

We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits. PMID:26348823

Electron Raman scattering in a strained ZnO/MgZnO double quantum well

NASA Astrophysics Data System (ADS)

Mojab-abpardeh, M.; Karimi, M. J.

2018-02-01

In this work, the electron Raman scattering in a strained ZnO / MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width.

[On Atomic Nuclear Fusion Processes at Low-Temperatures. An Enhancement of the Probability of Transition through a Potential Barrier Due to the So-Called Barrier Anti-Zeno Effect].

PubMed

Namiot, V A

2016-01-01

It is known that in quantum mechanics the act of observing the experiment can affect the experimental findings in some cases. In particular, it happens under the so-called Zeno effect. In this work it is shown that in contrast to the "standard" Zeno-effect where the act of observing a process reduces the probability of its reality, an inverse situation when a particle transmits through a potential barrier (a so-called barrier anti-Zeno effect) can be observed, the observation of the particle essentially increases the probability of its transmission through the barrier. The possibility of using the barrier anti-Zeno effect is discussed to explain paradoxical results of experiments on "cold nuclear fusion" observed in various systems including biological ones. (According to the observers who performed the observations, the energy generation, which could not be explained by any chemical processes, as well as the change in the isotope and even element composition of the studied object may occur in these systems.

Resonant electronic excitation energy transfer by Dexter mechanism in the quantum dot system

NASA Astrophysics Data System (ADS)

Samosvat, D. M.; Chikalova-Luzina, O. P.; Vyatkin, V. M.; Zegrya, G. G.

2016-11-01

In present work the energy transfer between quantum dots by the exchange (Dexter) mechanism is analysed. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same compound A3B5 and embedded in the matrix of other material creating potential barriers for electron and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found using the Kane model that provides the most adequate description spectra of semiconductors A3B5. Numerical calculations show that the rate of the energy transfer by Dexter mechanism is comparable to the rate of the energy transfer by electrostatic mechanism at the distances approaching to the contact ones.

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

2017-10-01

We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

Quantum dots transparent display (QDs-TPD) using a liquid QDs layer and N2 barrier discharge

NASA Astrophysics Data System (ADS)

Kim, Hong Tak; Lee, Sung-Youp; Sohn, Sang Ho

2017-07-01

Quantum dots transparent display (QDs-TPD) was realized using a liquid QDs layer and N2 barrier discharge panel. In the N2 discharge, the 2nd+ lines of N2 in the range of 300 - 400 nm (C3Πu - B3Πg), and the 1st- lines of N2+ at 391.4 and 427.8 nm (B2Σu+ - X2 Σg+) were mainly observed, while the visible emission lines were rarely observed. This implies the N2 discharge is suitable for the excitation source of the QDs, due to the strong ultra-violet radiations and the weak visible emissions. The emission centers for red, green, and blue color in QDs-TPD were positioned at 452, 540, and 638 nm, respectively, and the N2 emission peaks were seldom observed in the visible region. The transmittance of QDs-TPD was approximately 40% in the visible region and the luminescence was about 70 cd/m2. The CIE (x, y) coordinates of red, green, and blue colors were (0.670, 0.309), (0.378, 0.640), and (0.183, 0.118), respectively, and the color gamut was 71% of a NTSC standard. Thus, the QDs-TPD is expected as a way for realizing the TPD, due to its good transparency, excellent visibility, wide viewing-angle, aesthetical design, low cost production, and good scalability to large sizes.

Electronic properties of superlattices on quantum rings.

PubMed

da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

2017-04-26

We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

Electronic properties of superlattices on quantum rings

NASA Astrophysics Data System (ADS)

da Costa, D. R.; Chaves, A.; Ferreira, W. P.; Farias, G. A.; Ferreira, R.

2017-04-01

We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

FAST TRACK COMMUNICATION: Graphene based quantum dots

NASA Astrophysics Data System (ADS)

Zhang, H. G.; Hu, H.; Pan, Y.; Mao, J. H.; Gao, M.; Guo, H. M.; Du, S. X.; Greber, T.; Gao, H.-J.

2010-08-01

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene.

PubMed

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-02

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-01

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Computational Role of Tunneling in a Programmable Quantum Annealer

NASA Technical Reports Server (NTRS)

Boixo, Sergio; Smelyanskiy, Vadim; Shabani, Alireza; Isakov, Sergei V.; Dykman, Mark; Amin, Mohammad; Mohseni, Masoud; Denchev, Vasil S.; Neven, Hartmut

2016-01-01

Quantum tunneling is a phenomenon in which a quantum state tunnels through energy barriers above the energy of the state itself. Tunneling has been hypothesized as an advantageous physical resource for optimization. Here we present the first experimental evidence of a computational role of multiqubit quantum tunneling in the evolution of a programmable quantum annealer. We developed a theoretical model based on a NIBA Quantum Master Equation to describe the multi-qubit dissipative cotunneling effects under the complex noise characteristics of such quantum devices.We start by considering a computational primitive, the simplest non-convex optimization problem consisting of just one global and one local minimum. The quantum evolutions enable tunneling to the global minimum while the corresponding classical paths are trapped in a false minimum. In our study the non-convex potentials are realized by frustrated networks of qubit clusters with strong intra-cluster coupling. We show that the collective effect of the quantum environment is suppressed in the critical phase during the evolution where quantum tunneling decides the right path to solution. In a later stage dissipation facilitates the multiqubit cotunneling leading to the solution state. The predictions of the model accurately describe the experimental data from the D-WaveII quantum annealer at NASA Ames. In our computational primitive the temperature dependence of the probability of success in the quantum model is opposite to that of the classical paths with thermal hopping. Specially, we provide an analysis of an optimization problem with sixteen qubits,demonstrating eight qubit cotunneling that increases success probabilities. Furthermore, we report results for larger problems with up to 200 qubits that contain the primitive as subproblems.

Electronic scattering, focusing, and resonance by a spherical barrier in Weyl semimetals

NASA Astrophysics Data System (ADS)

Lu, Ming; Zhang, Xiao-Xiao

2018-05-01

We solve the Weyl electron scattered by a spherical step potential barrier. Tuning the incident energy and the potential radius, one can enter both quasiclassical and quantum regimes. Transport features related to far-field currents and integrated cross sections are studied to reveal the preferred forward scattering. In the quasiclassical regime, a strong focusing effect along the incident spherical axis is found in addition to optical caustic patterns. In the quantum regime, at energies of successive angular momentum resonances, a polar aggregation of electron density is found inside the potential. The findings will be useful in transport studies and electronic lens applications in Weyl systems.

High-density Schottky barrier IRCCD sensors for remote sensing applications

NASA Astrophysics Data System (ADS)

Elabd, H.; Tower, J. R.; McCarthy, B. M.

1983-01-01

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nayak, R. K.; Das, S.; Panda, A. K.

We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/Al{sub x}Ga{sub 1-x}As barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip inmore » mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.« less

Einstein-Podolsky-Rosen paradox and quantum steering in pulsed optomechanics

NASA Astrophysics Data System (ADS)

He, Q. Y.; Reid, M. D.

2013-11-01

We describe how to generate an Einstein-Podolsky-Rosen (EPR) paradox between a mesoscopic mechanical oscillator and an optical pulse. We find two types of paradox, defined by whether it is the oscillator or the pulse that shows the effect Schrödinger called “steering”. Only the oscillator paradox addresses the question of mesoscopic local reality for a massive system. In that case, EPR's “elements of reality” are defined for the oscillator, and it is these elements of reality that are falsified (if quantum mechanics is complete). For this sort of paradox, we show that a thermal barrier exists, meaning that a threshold level of pulse-oscillator interaction is required for a given thermal occupation n0 of the oscillator. We find there is no equivalent thermal barrier for the entanglement of the pulse with the oscillator or for the EPR paradox that addresses the local reality of the optical system. Finally, we examine the possibility of an EPR paradox between two entangled oscillators. Our work highlights the asymmetrical effect of thermal noise on quantum nonlocality.

Charge carrier dynamics of GaAs/AlGaAs asymmetric double quantum wells at room temperature studied by optical pump terahertz probe spectroscopy

NASA Astrophysics Data System (ADS)

Afalla, Jessica; Ohta, Kaoru; Tokonami, Shunrou; Prieto, Elizabeth Ann; Catindig, Gerald Angelo; Cedric Gonzales, Karl; Jaculbia, Rafael; Vasquez, John Daniel; Somintac, Armando; Salvador, Arnel; Estacio, Elmer; Tani, Masahiko; Tominaga, Keisuke

2017-11-01

Two asymmetric double quantum wells of different coupling strengths (barrier widths) were grown via molecular beam epitaxy, both samples allowing tunneling. Photoluminescence was measured at 10 and 300 K to provide evidence of tunneling, barrier dependence, and structural uniformity. Carrier dynamics at room temperature was investigated by optical pump terahertz probe (OPTP) spectroscopy. Carrier population decay rates were obtained and photoconductivity spectra were analyzed using the Drude model. This work demonstrates that carrier, and possibly tunneling dynamics in asymmetric double quantum well structures may be studied at room temperature through OPTP spectroscopy.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

PubMed

Zhou, Xiaorun; Lu, Taiping; Zhu, Yadan; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

2017-12-01

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H 2 ) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H 2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H 2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H 2 proportion further increases, stress relaxation and H 2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

Stark-shift of impurity fundamental state in a lens shaped quantum dot

NASA Astrophysics Data System (ADS)

Aderras, L.; Bah, A.; Feddi, E.; Dujardin, F.; Duque, C. A.

2017-05-01

We calculate the Stark effect and the polarisability of shallow-donor impurity located in the centre of lens shaped quantum dot by a variational method and in the effective-mass approximation. Our theoretical model assumes an infinite confinement to describe the barriers at the dot boundaries and the electric field is considered to be applied in the z-direction. The systematic theoretical investigation contains results with the quantum dot size and the strength of the external field. Our calculations reveal that the interval wherein the polarisability varies depends strongly on the dot size.

Role of tunnelling in complete and incomplete fusion induced by 9Be on 169Tm and 187Re targets at around barrier energies

NASA Astrophysics Data System (ADS)

Kharab, Rajesh; Chahal, Rajiv; Kumar, Rajiv

2017-04-01

We have analyzed the complete and incomplete fusion excitation function for 9Be +169Tm, 187Re reactions at around barrier energies using the code PLATYPUS based on classical dynamical model. The quantum mechanical tunnelling correction is incorporated at near and sub barrier energies which significantly improves the matching between the data and prediction.

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Water catalysis and anticatalysis in photochemical reactions: observation of a delayed threshold effect in the reaction quantum yield.

PubMed

Kramer, Zeb C; Takahashi, Kaito; Skodje, Rex T

2010-11-03

The possible catalysis of photochemical reactions by water molecules is considered. Using theoretical simulations, we investigate the HF-elimination reaction of fluoromethanol in small water clusters initiated by the overtone excitation of the hydroxyl group. The reaction occurs in competition with the process of water evaporation that dissipates the excitation and quenches the reaction. Although the transition state barrier is stabilized by over 20 kcal/mol through hydrogen bonding with water, the quantum yield versus energy shows a pronounced delayed threshold that effectively eliminates the catalytic effect. It is concluded that the quantum chemistry calculations of barrier lowering are not sufficient to infer water catalysis in some photochemical reactions, which instead require dynamical modeling.

Role of quantum fluctuations in structural dynamics of liquids of light molecules

DOE PAGES

Agapov, A.; Novikov, V. N.; Kisliuk, A.; ...

2016-12-16

A possible role of quantum effects, such as tunneling and zero-point energy, in the structural dynamics of supercooled liquids is studied by dielectric spectroscopy. Our results demonstrate that the liquids, bulk 3-methyl pentane and confined normal and deuterated water, have low glass transition temperature and unusually low for their class of materials steepness of the temperature dependence of structural relaxation (fragility). Although we do not find any signs of tunneling in the structural relaxation of these liquids, their unusually low fragility can be well described by the influence of the quantum fluctuations. Confined water presents an especially interesting case inmore » comparison to the earlier data on bulk low-density amorphous and vapor deposited water. Confined water exhibits a much weaker isotope effect than bulk water, although the effect is still significant. Here, we show that it can be ascribed to the change of the energy barrier for relaxation due to a decrease in the zeropoint energy upon D/H substitution. We observed a difference in the behavior of confined and bulk water demonstrates high sensitivity of quantum effects to the barrier heights and structure of water. Moreover, these results demonstrate that extrapolation of confined water properties to the bulk water behavior is questionable.« less

Magnetic quantum tunneling: insights from simple molecule-based magnets.

PubMed

Hill, Stephen; Datta, Saiti; Liu, Junjie; Inglis, Ross; Milios, Constantinos J; Feng, Patrick L; Henderson, John J; del Barco, Enrique; Brechin, Euan K; Hendrickson, David N

2010-05-28

This perspectives article takes a broad view of the current understanding of magnetic bistability and magnetic quantum tunneling in single-molecule magnets (SMMs), focusing on three families of relatively simple, low-nuclearity transition metal clusters: spin S = 4 Ni(II)(4), Mn(III)(3) (S = 2 and 6) and Mn(III)(6) (S = 4 and 12). The Mn(III) complexes are related by the fact that they contain triangular Mn(III)(3) units in which the exchange may be switched from antiferromagnetic to ferromagnetic without significantly altering the coordination around the Mn(III) centers, thereby leaving the single-ion physics more-or-less unaltered. This allows for a detailed and systematic study of the way in which the individual-ion anisotropies project onto the molecular spin ground state in otherwise identical low- and high-spin molecules, thus providing unique insights into the key factors that control the quantum dynamics of SMMs, namely: (i) the height of the kinetic barrier to magnetization relaxation; and (ii) the transverse interactions that cause tunneling through this barrier. Numerical calculations are supported by an unprecedented experimental data set (17 different compounds), including very detailed spectroscopic information obtained from high-frequency electron paramagnetic resonance and low-temperature hysteresis measurements. Comparisons are made between the giant spin and multi-spin phenomenologies. The giant spin approach assumes the ground state spin, S, to be exact, enabling implementation of simple anisotropy projection techniques. This methodology provides a basic understanding of the concept of anisotropy dilution whereby the cluster anisotropy decreases as the total spin increases, resulting in a barrier that depends weakly on S. This partly explains why the record barrier for a SMM (86 K for Mn(6)) has barely increased in the 15 years since the first studies of Mn(12)-acetate, and why the tiny Mn(3) molecule can have a barrier approaching 60% of this

Quantum dot lasers: From promise to high-performance devices

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

2009-03-01

Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

The electronic and optical properties of quantum nano-structures

NASA Astrophysics Data System (ADS)

Ham, Heon

In semiconducting quantum nano-structures, the excitonic effects play an important role when we fabricate opto-electronic devices, such as lasers, diodes, detectors, etc. To gain a better understanding of the excitonic effects in quantum nano-structures, we investigated the exciton binding energy, oscillator strength, and linewidth in quantum nano-structures using both the infinite and finite well models. We investigated also the hydrogenic impurity binding energy and the photoionization cross section of the hydrogenic impurity in a spherical quantum dot. In our work, the variational approach is used in all calculations, because the Hamiltonian of the system is not separable, due to the different symmetries of the Coulomb and confining potentials. In the infinite well model of the semiconducting quantum nanostructures, the binding energy of the exciton increases with decreasing width of the potential barriers due to the increase in the effective strength of the Coulomb interaction between the electron and hole. In the finite well model, the exciton binding energy reaches a peak value, and the binding energy decreases with further decrease in the width of the potential barriers. The exciton linewidth in the infinite well model increases with decreasing wire radius, because the scattering rate of the exciton increases with decreasing wire radius. In the finite well model, the exciton linewidth in a cylindrical quantum wire reaches a peak value and the exciton linewidth decreases with further decrease in the wire radius, because the exciton is not well confined at very smaller wire radii. The binding energy of the hydrogenic impurity in a spherical quantum dot has also calculated using both the infinite and the finite well models. The binding energy of the hydrogenic impurity was calculated for on center and off center impurities in the spherical quantum dots. With decreasing radii of the dots, the binding energy of the hydrogenic impurity increases in the infinite

Performance of mid-wave T2SL detectors with heterojunction barriers

NASA Astrophysics Data System (ADS)

Asplund, Carl; Marcks von Würtemberg, Rickard; Lantz, Dan; Malm, Hedda; Martijn, Henk; Plis, Elena; Gautam, Nutan; Krishna, Sanjay

2013-07-01

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10-6 A/cm2 at -0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p-i-n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.

Quantum entanglement in strong-field ionization

NASA Astrophysics Data System (ADS)

Majorosi, Szilárd; Benedict, Mihály G.; Czirják, Attila

2017-10-01

We investigate the time evolution of quantum entanglement between an electron, liberated by a strong few-cycle laser pulse, and its parent ion core. Since the standard procedure is numerically prohibitive in this case, we propose a method to quantify the quantum correlation in such a system: we use the reduced density matrices of the directional subspaces along the polarization of the laser pulse and along the transverse directions as building blocks for an approximate entanglement entropy. We present our results, based on accurate numerical simulations, in terms of several of these entropies, for selected values of the peak electric-field strength and the carrier-envelope phase difference of the laser pulse. The time evolution of the mutual entropy of the electron and the ion-core motion along the direction of the laser polarization is similar to our earlier results based on a simple one-dimensional model. However, taking into account also the dynamics perpendicular to the laser polarization reveals a surprisingly different entanglement dynamics above the laser intensity range corresponding to pure tunneling: the quantum entanglement decreases with time in the over-the-barrier ionization regime.

An Algebraic Method for Exploring Quantum Monodromy and Quantum Phase Transitions in Non-Rigid Molecules

NASA Astrophysics Data System (ADS)

Larese, D.; Iachello, F.

2011-06-01

A simple algebraic Hamiltonian has been used to explore the vibrational and rotational spectra of the skeletal bending modes of HCNO, BrCNO, NCNCS, and other ``floppy`` (quasi-linear or quasi-bent) molecules. These molecules have large-amplitude, low-energy bending modes and champagne-bottle potential surfaces, making them good candidates for observing quantum phase transitions (QPT). We describe the geometric phase transitions from bent to linear in these and other non-rigid molecules, quantitatively analysing the spectroscopy signatures of ground state QPT, excited state QPT, and quantum monodromy.The algebraic framework is ideal for this work because of its small calculational effort yet robust results. Although these methods have historically found success with tri- and four-atomic molecules, we now address five-atomic and simple branched molecules such as CH_3NCO and GeH_3NCO. Extraction of potential functions is completed for several molecules, resulting in predictions of barriers to linearity and equilibrium bond angles.

Giant oscillations of the current in a dirty 2D electron system flowing perpendicular to a lateral barrier under magnetic field

NASA Astrophysics Data System (ADS)

Kadigrobov, A. M.

2017-08-01

The charge transport in a dirty 2-dimensional electron system biased in the presence of a lateral potential barrier under magnetic field is theoretically studied. The quantum tunnelling across the barrier provides the quantum interference of the edge states localized on its both sides that results in giant oscillations of the charge current flowing perpendicular to the lateral junction. Our theoretical analysis is in a good agreement with the experimental observations presented in Kang et al. [Lett. Nat. 403, 59 (2000)]. In particular, positions of the conductance maxima coincide with the Landau levels while the conductance itself is essentially suppressed even at the energies at which the resonant tunnelling occurs and hence these puzzling observations can be resolved without taking into account the electron-electron interaction.

Steinberg ``AUDIOMAPS'' Music Appreciation-Via-Understanding: Special-Relativity + Expectations ``Quantum-Theory'': a Quantum-ACOUSTO/MUSICO-Dynamics (QA/MD)

NASA Astrophysics Data System (ADS)

Fender, Lee; Steinberg, Russell; Siegel, Edward Carl-Ludwig

2011-03-01

Steinberg wildly popular "AUDIOMAPS" music enjoyment/appreciation-via-understanding methodology, versus art, music-dynamics evolves, telling a story in (3+1)-dimensions: trails, frames, timbres, + dynamics amplitude vs. music-score time-series (formal-inverse power-spectrum) surprisingly closely parallels (3+1)-dimensional Einstein(1905) special-relativity "+" (with its enjoyment-expectations) a manifestation of quantum-theory expectation-values, together a music quantum-ACOUSTO/MUSICO-dynamics(QA/MD). Analysis via Derrida deconstruction enabled Siegel-Baez "Category-Semantics" "FUZZYICS"="CATEGORYICS ('TRIZ") Aristotle SoO DEduction , irrespective of Boon-Klimontovich vs. Voss-Clark[PRL(77)] music power-spectrum analysis sampling-time/duration controversy: part versus whole, shows QA/MD reigns supreme as THE music appreciation-via-analysis tool for the listener in musicology!!! Connection to Deutsch-Hartmann-Levitin[This is Your Brain on Music, (06)] brain/mind-barrier brain/mind-music connection is subtle/compelling/immediate!!!

How Mg2+ ions lower the SN2@P barrier in enzymatic triphosphate hydrolysis.

PubMed

van Bochove, Marc A; Roos, Goedele; Fonseca Guerra, Célia; Hamlin, Trevor A; Bickelhaupt, F Matthias

2018-04-03

Our quantum chemical activation strain analyses demonstrate how Mg2+ lowers the barrier of the enzymatic triphosphate hydrolysis through two distinct mechanisms: (a) weakening of the leaving-group bond, thereby decreasing activation strain; and (b) transition state (TS) stabilization through enhanced electrophilicity of the triphosphate PPP substrate, thereby strengthening the interaction with the nucleophile.

Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

NASA Astrophysics Data System (ADS)

Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

2017-09-01

Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

Suppression of Magnetic Quantum Tunneling in a Chiral Single-Molecule Magnet by Ferromagnetic Interactions.

PubMed

Lippert, Kai-Alexander; Mukherjee, Chandan; Broschinski, Jan-Philipp; Lippert, Yvonne; Walleck, Stephan; Stammler, Anja; Bögge, Hartmut; Schnack, Jürgen; Glaser, Thorsten

2017-12-18

Single-molecule magnets (SMMs) retain a magnetization without applied magnetic field for a decent time due to an energy barrier U for spin-reversal. Despite the success to increase U, the difficult to control magnetic quantum tunneling often leads to a decreased effective barrier U eff and a fast relaxation. Here, we demonstrate the influence of the exchange coupling on the tunneling probability in two heptanuclear SMMs hosting the same spin-system with the same high spin ground state S t = 21/2. A chirality-induced symmetry reduction leads to a switch of the Mn III -Mn III exchange from antiferromagnetic in the achiral SMM [Mn III 6 Cr III ] 3+ to ferromagnetic in the new chiral SMM RR [Mn III 6 Cr III ] 3+ . Multispin Hamiltonian analysis by full-matrix diagonalization demonstrates that the ferromagnetic interactions in RR [Mn III 6 Cr III ] 3+ enforce a well-defined S t = 21/2 ground state with substantially less mixing of M S substates in contrast to [Mn III 6 Cr III ] 3+ and no tunneling pathways below the top of the energy barrier. This is experimentally verified as U eff is smaller than the calculated energy barrier U in [Mn III 6 Cr III ] 3+ due to tunneling pathways, whereas U eff equals U in RR [Mn III 6 Cr III ] 3+ demonstrating the absence of quantum tunneling.

Toward simulating complex systems with quantum effects

NASA Astrophysics Data System (ADS)

Kenion-Hanrath, Rachel Lynn

Quantum effects like tunneling, coherence, and zero point energy often play a significant role in phenomena on the scales of atoms and molecules. However, the exact quantum treatment of a system scales exponentially with dimensionality, making it impractical for characterizing reaction rates and mechanisms in complex systems. An ongoing effort in the field of theoretical chemistry and physics is extending scalable, classical trajectory-based simulation methods capable of capturing quantum effects to describe dynamic processes in many-body systems; in the work presented here we explore two such techniques. First, we detail an explicit electron, path integral (PI)-based simulation protocol for predicting the rate of electron transfer in condensed-phase transition metal complex systems. Using a PI representation of the transferring electron and a classical representation of the transition metal complex and solvent atoms, we compute the outer sphere free energy barrier and dynamical recrossing factor of the electron transfer rate while accounting for quantum tunneling and zero point energy effects. We are able to achieve this employing only a single set of force field parameters to describe the system rather than parameterizing along the reaction coordinate. Following our success in describing a simple model system, we discuss our next steps in extending our protocol to technologically relevant materials systems. The latter half focuses on the Mixed Quantum-Classical Initial Value Representation (MQC-IVR) of real-time correlation functions, a semiclassical method which has demonstrated its ability to "tune'' between quantum- and classical-limit correlation functions while maintaining dynamic consistency. Specifically, this is achieved through a parameter that determines the quantumness of individual degrees of freedom. Here, we derive a semiclassical correction term for the MQC-IVR to systematically characterize the error introduced by different choices of simulation

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.

2017-02-15

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can bemore » attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.« less

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum

Quantum thermostatted disordered systems and sensitivity under compression

NASA Astrophysics Data System (ADS)

Vanzan, Tommaso; Rondoni, Lamberto

2018-03-01

A one-dimensional quantum system with off diagonal disorder, consisting of a sample of conducting regions randomly interspersed within potential barriers is considered. Results mainly concerning the large N limit are presented. In particular, the effect of compression on the transmission coefficient is investigated. A numerical method to simulate such a system, for a physically relevant number of barriers, is proposed. It is shown that the disordered model converges to the periodic case as N increases, with a rate of convergence which depends on the disorder degree. Compression always leads to a decrease of the transmission coefficient which may be exploited to design nano-technological sensors. Effective choices for the physical parameters to improve the sensitivity are provided. Eventually large fluctuations and rate functions are analysed.

Entanglement of Electron Spins in Two Coupled Quantum Dots

NASA Astrophysics Data System (ADS)

Chen, Yuanzhen; Webb, Richard

2004-03-01

We study the entanglement of electron spins in a coupled quantum dots system at 70 mK. Two quantum dots are fabricated in a GaAs/AlGaAs heterostructure containing a high mobility 2-D electron gas. The two dots can be tuned independently and the electron spins in the dots are coupled through an exchange interaction between them. An exchange gate is used to vary the height and width of a potential barrier between the two dots, thus controlling the strength of the exchange interaction. Electrons are injected to the coupled dots by two independent DC currents and the output of the dots is incident on a beam splitter, which introduces quantum interferences. Cross-correlations of the shot noise of currents from the two output channels are measured and compared with theory (1). *Work supported by LPS and ARDA under MDA90401C0903 and NSF under DMR 0103223. (1) Burkard, Loss, & Sukhorukov, Phys. Rev. B61, R16303 (2000).

Tunneling and speedup in quantum optimization for permutation-symmetric problems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthukrishnan, Siddharth; Albash, Tameem; Lidar, Daniel A.

Tunneling is often claimed to be the key mechanism underlying possible speedups in quantum optimization via quantum annealing (QA), especially for problems featuring a cost function with tall and thin barriers. We present and analyze several counterexamples from the class of perturbed Hamming weight optimization problems with qubit permutation symmetry. We first show that, for these problems, the adiabatic dynamics that make tunneling possible should be understood not in terms of the cost function but rather the semiclassical potential arising from the spin-coherent path-integral formalism. We then provide an example where the shape of the barrier in the final costmore » function is short and wide, which might suggest no quantum advantage for QA, yet where tunneling renders QA superior to simulated annealing in the adiabatic regime. However, the adiabatic dynamics turn out not be optimal. Instead, an evolution involving a sequence of diabatic transitions through many avoided-level crossings, involving no tunneling, is optimal and outperforms adiabatic QA. We show that this phenomenon of speedup by diabatic transitions is not unique to this example, and we provide an example where it provides an exponential speedup over adiabatic QA. In yet another twist, we show that a classical algorithm, spin-vector dynamics, is at least as efficient as diabatic QA. Lastly, in a different example with a convex cost function, the diabatic transitions result in a speedup relative to both adiabatic QA with tunneling and classical spin-vector dynamics.« less

Tunneling and speedup in quantum optimization for permutation-symmetric problems

DOE PAGES

Muthukrishnan, Siddharth; Albash, Tameem; Lidar, Daniel A.

2016-07-21

Tunneling is often claimed to be the key mechanism underlying possible speedups in quantum optimization via quantum annealing (QA), especially for problems featuring a cost function with tall and thin barriers. We present and analyze several counterexamples from the class of perturbed Hamming weight optimization problems with qubit permutation symmetry. We first show that, for these problems, the adiabatic dynamics that make tunneling possible should be understood not in terms of the cost function but rather the semiclassical potential arising from the spin-coherent path-integral formalism. We then provide an example where the shape of the barrier in the final costmore » function is short and wide, which might suggest no quantum advantage for QA, yet where tunneling renders QA superior to simulated annealing in the adiabatic regime. However, the adiabatic dynamics turn out not be optimal. Instead, an evolution involving a sequence of diabatic transitions through many avoided-level crossings, involving no tunneling, is optimal and outperforms adiabatic QA. We show that this phenomenon of speedup by diabatic transitions is not unique to this example, and we provide an example where it provides an exponential speedup over adiabatic QA. In yet another twist, we show that a classical algorithm, spin-vector dynamics, is at least as efficient as diabatic QA. Lastly, in a different example with a convex cost function, the diabatic transitions result in a speedup relative to both adiabatic QA with tunneling and classical spin-vector dynamics.« less

Quantum Monte Carlo tunneling from quantum chemistry to quantum annealing

NASA Astrophysics Data System (ADS)

Mazzola, Guglielmo; Smelyanskiy, Vadim N.; Troyer, Matthias

2017-10-01

Quantum tunneling is ubiquitous across different fields, from quantum chemical reactions and magnetic materials to quantum simulators and quantum computers. While simulating the real-time quantum dynamics of tunneling is infeasible for high-dimensional systems, quantum tunneling also shows up in quantum Monte Carlo (QMC) simulations, which aim to simulate quantum statistics with resources growing only polynomially with the system size. Here we extend the recent results obtained for quantum spin models [Phys. Rev. Lett. 117, 180402 (2016), 10.1103/PhysRevLett.117.180402], and we study continuous-variable models for proton transfer reactions. We demonstrate that QMC simulations efficiently recover the scaling of ground-state tunneling rates due to the existence of an instanton path, which always connects the reactant state with the product. We discuss the implications of our results in the context of quantum chemical reactions and quantum annealing, where quantum tunneling is expected to be a valuable resource for solving combinatorial optimization problems.

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

NASA Astrophysics Data System (ADS)

Pascher, Nikola; Hennel, Szymon; Mueller, Susanne; Fuhrer, Andreas

2016-08-01

A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with n-type doping by phosphine. The four contacts have different separations (d = 9, 12, 16 and 29 nm) to the central 6 nm × 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation d. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. Furthermore, we show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.

230 s room-temperature storage time and 1.14 eV hole localization energy in In{sub 0.5}Ga{sub 0.5}As quantum dots on a GaAs interlayer in GaP with an AlP barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bonato, Leo, E-mail: leo.bonato@tu-berlin.de; Sala, Elisa M.; Stracke, Gernot

2015-01-26

A GaP n{sup +}p-diode containing In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n{sup +}p-diode and an n{sup +}p-diode with AlP barrier. Localization energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The localization energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher localization energies and longer storage times.

Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

DTIC Science & Technology

2008-01-01

Available online 18 October 2008 PACS: 72.80.Ey 73.61.Ey 81.05.Ea 85.30.Tv Keywords: A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III–V...were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1x. The composition of the...composition in order to control the strain in the GaSb quantum well. The heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi

High Density Schottky Barrier Infrared Charge-Coupled Device (IRCCD) Sensors For Short Wavelength Infrared (SWIR) Applications At Intermediate Temperature

NASA Astrophysics Data System (ADS)

Elabd, H.; Villani, T. S.; Tower, J. R.

1982-11-01

Monolithic 32 x 64 and 64 x 128 palladium silicide (Pd2Si) interline transfer IRCCDs sensitive in the 1-3.5 pm spectral band have been developed. This silicon imager exhibits a low response nonuniformity of typically 0.2-1.6% rms, and has been operated in the temperature range between 40-140K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 μm, 5.6% at 1.65 μm and 2.2% at 2.22 μm. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detector is ≍0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate tem-peratures at TV frame rates. Typical dark current level measured at 120K on the FPA is 2 nA/cm2. The Pd2Si Schottky barrier imaging technology has been developed for satellite sensing of earth resources. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 μm bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 μm center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Schrödinger–Langevin equation with quantum trajectories for photodissociation dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, Chia-Chun, E-mail: ccchou@mx.nthu.edu.tw

The Schrödinger–Langevin equation is integrated to study the wave packet dynamics of quantum systems subject to frictional effects by propagating an ensemble of quantum trajectories. The equations of motion for the complex action and quantum trajectories are derived from the Schrödinger–Langevin equation. The moving least squares approach is used to evaluate the spatial derivatives of the complex action required for the integration of the equations of motion. Computational results are presented and analyzed for the evolution of a free Gaussian wave packet, a two-dimensional barrier model, and the photodissociation dynamics of NOCl. The absorption spectrum of NOCl obtained from themore » Schrödinger–Langevin equation displays a redshift when frictional effects increase. This computational result agrees qualitatively with the experimental results in the solution-phase photochemistry of NOCl.« less

Quantum Tunneling and Chaos in Classical Scale Walkers

NASA Astrophysics Data System (ADS)

Su, Jenny; Dijksman, Joshua; Ward, Jeremy; Behringer, Robert

2014-03-01

We study the behavior of `walkers' small droplets bouncing on a fluid layer vibrated at amplitudes just below the onset of Faraday instability. It was shown recently that despite their macroscopic size, the droplet dynamics are stochastic in nature and reminiscent of the dual particle-wave dynamics in the realm of quantum mechanics (Couder PRL 2006). We use these walkers to study how chaos, which is macroscopically unpredictable, will manifest in a quantum setting. Pecora showed in 2011 that tunneling for particles that have a chaotic ground state is different from tunneling for particles with a regular ground state (PRE 2011). In the experiment we gather data that illustrates the particle trajectory and tunneling behavior as particles transition across the barrier in the double well system with both integrable and chaotic shapes.

Critical fluctuations and the rates of interstate switching near the excitation threshold of a quantum parametric oscillator.

PubMed

Lin, Z R; Nakamura, Y; Dykman, M I

2015-08-01

We study the dynamics of a nonlinear oscillator near the critical point where period-two vibrations are first excited with the increasing amplitude of parametric driving. Above the threshold, quantum fluctuations induce transitions between the period-two states over the quasienergy barrier. We find the effective quantum activation energies for such transitions and their scaling with the difference of the driving amplitude from its critical value. We also find the scaling of the fluctuation correlation time with the quantum noise parameters in the critical region near the threshold. The results are extended to oscillators with nonlinear friction.

Minimal excitation states for heat transport in driven quantum Hall systems

NASA Astrophysics Data System (ADS)

Vannucci, Luca; Ronetti, Flavio; Rech, Jérôme; Ferraro, Dario; Jonckheere, Thibaut; Martin, Thierry; Sassetti, Maura

2017-06-01

We investigate minimal excitation states for heat transport into a fractional quantum Hall system driven out of equilibrium by means of time-periodic voltage pulses. A quantum point contact allows for tunneling of fractional quasiparticles between opposite edge states, thus acting as a beam splitter in the framework of the electron quantum optics. Excitations are then studied through heat and mixed noise generated by the random partitioning at the barrier. It is shown that levitons, the single-particle excitations of a filled Fermi sea recently observed in experiments, represent the cleanest states for heat transport since excess heat and mixed shot noise both vanish only when Lorentzian voltage pulses carrying integer electric charge are applied to the conductor. This happens in the integer quantum Hall regime and for Laughlin fractional states as well, with no influence of fractional physics on the conditions for clean energy pulses. In addition, we demonstrate the robustness of such excitations to the overlap of Lorentzian wave packets. Even though mixed and heat noise have nonlinear dependence on the voltage bias, and despite the noninteger power-law behavior arising from the fractional quantum Hall physics, an arbitrary superposition of levitons always generates minimal excitation states.

Negative muon chemistry: the quantum muon effect and the finite nuclear mass effect.

PubMed

Posada, Edwin; Moncada, Félix; Reyes, Andrés

2014-10-09

The any-particle molecular orbital method at the full configuration interaction level has been employed to study atoms in which one electron has been replaced by a negative muon. In this approach electrons and muons are described as quantum waves. A scheme has been proposed to discriminate nuclear mass and quantum muon effects on chemical properties of muonic and regular atoms. This study reveals that the differences in the ionization potentials of isoelectronic muonic atoms and regular atoms are of the order of millielectronvolts. For the valence ionizations of muonic helium and muonic lithium the nuclear mass effects are more important. On the other hand, for 1s ionizations of muonic atoms heavier than beryllium, the quantum muon effects are more important. In addition, this study presents an assessment of the nuclear mass and quantum muon effects on the barrier of Heμ + H2 reaction.

Quantum games as quantum types

NASA Astrophysics Data System (ADS)

Delbecque, Yannick

In this thesis, we present a new model for higher-order quantum programming languages. The proposed model is an adaptation of the probabilistic game semantics developed by Danos and Harmer [DH02]: we expand it with quantum strategies which enable one to represent quantum states and quantum operations. Some of the basic properties of these strategies are established and then used to construct denotational semantics for three quantum programming languages. The first of these languages is a formalisation of the measurement calculus proposed by Danos et al. [DKP07]. The other two are new: they are higher-order quantum programming languages. Previous attempts to define a denotational semantics for higher-order quantum programming languages have failed. We identify some of the key reasons for this and base the design of our higher-order languages on these observations. The game semantics proposed in this thesis is the first denotational semantics for a lambda-calculus equipped with quantum types and with extra operations which allow one to program quantum algorithms. The results presented validate the two different approaches used in the design of these two new higher-order languages: a first one where quantum states are used through references and a second one where they are introduced as constants in the language. The quantum strategies presented in this thesis allow one to understand the constraints that must be imposed on quantum type systems with higher-order types. The most significant constraint is the fact that abstraction over part of the tensor product of many unknown quantum states must not be allowed. Quantum strategies are a new mathematical model which describes the interaction between classical and quantum data using system-environment dialogues. The interactions between the different parts of a quantum system are described using the rich structure generated by composition of strategies. This approach has enough generality to be put in relation with other

Quantum structures for recombination control in the light-emitting transistor

NASA Astrophysics Data System (ADS)

Chen, Kanuo; Hsiao, Fu-Chen; Joy, Brittany; Dallesasse, John M.

2017-02-01

Recombination of carriers in the direct-bandgap base of a transistor-injected quantum cascade laser (TI-QCL) is shown to be controllable through the field applied across the quantum cascade region located in the transistor's base-collector junction. The influence of the electric field on the quantum states in the cascade region's superlattice allows free flow of electrons out of the transistor base only for field values near the design field that provides optimal QCL gain. Quantum modulation of base recombination in the light-emitting transistor is therefore observed. In a GaAs-based light-emitting transistor, a periodic superlattice is grown between the p-type base and the n-type collector. Under different base-collector biasing conditions the distribution of quantum states, and as a consequence transition probabilities through the wells and barriers forming the cascade region, leads to strong field-dependent mobility for electrons in transit through the base-collector junction. The radiative base recombination, which is influenced by minority carrier transition lifetime, can be modulated through the quantum states alignment in the superlattice. A GaAs-based transistor-injected quantum cascade laser with AlGaAs/GaAs superlattice is designed and fabricated. Radiative base recombination is measured under both common-emitter and common-base configuration. In both configurations the optical output from the base is proportional to the emitter injection. When the quantum states in the superlattice are aligned the optical output in the base is reduced as electrons encounter less impedance entering the collector; when the quantum states are misaligned electrons have longer lifetime in the base and the radiative base recombination process is enhanced.

Under-the-barrier dynamics in laser-induced relativistic tunneling.

PubMed

Klaiber, Michael; Yakaboylu, Enderalp; Bauke, Heiko; Hatsagortsyan, Karen Z; Keitel, Christoph H

2013-04-12

The tunneling dynamics in relativistic strong-field ionization is investigated with the aim to develop an intuitive picture for the relativistic tunneling regime. We demonstrate that the tunneling picture applies also in the relativistic regime by introducing position dependent energy levels. The quantum dynamics in the classically forbidden region features two time scales, the typical time that characterizes the probability density's decay of the ionizing electron under the barrier (Keldysh time) and the time interval which the electron spends inside the barrier (Eisenbud-Wigner-Smith tunneling time). In the relativistic regime, an electron momentum shift as well as a spatial shift along the laser propagation direction arise during the under-the-barrier motion which are caused by the laser magnetic field induced Lorentz force. The momentum shift is proportional to the Keldysh time, while the wave-packet's spatial drift is proportional to the Eisenbud-Wigner-Smith time. The signature of the momentum shift is shown to be present in the ionization spectrum at the detector and, therefore, observable experimentally. In contrast, the signature of the Eisenbud-Wigner-Smith time delay disappears at far distances for pure quasistatic tunneling dynamics.

Internalization of targeted quantum dots by brain capillary endothelial cells in vivo.

PubMed

Paris-Robidas, Sarah; Brouard, Danny; Emond, Vincent; Parent, Martin; Calon, Frédéric

2016-04-01

Receptors located on brain capillary endothelial cells forming the blood-brain barrier are the target of most brain drug delivery approaches. Yet, direct subcellular evidence of vectorized transport of nanoformulations into the brain is lacking. To resolve this question, quantum dots were conjugated to monoclonal antibodies (Ri7) targeting the murine transferrin receptor. Specific transferrin receptor-mediated endocytosis of Ri7-quantum dots was first confirmed in N2A and bEnd5 cells. After intravenous injection in mice, Ri7-quantum dots exhibited a fourfold higher volume of distribution in brain tissues, compared to controls. Immunofluorescence analysis showed that Ri7-quantum dots were sequestered throughout the cerebral vasculature 30 min, 1 h, and 4 h post injection, with a decline of signal intensity after 24 h. Transmission electron microscopic studies confirmed that Ri7-quantum dots were massively internalized by brain capillary endothelial cells, averaging 37 ± 4 Ri7-quantum dots/cell 1 h after injection. Most quantum dots within brain capillary endothelial cells were observed in small vesicles (58%), with a smaller proportion detected in tubular structures or in multivesicular bodies. Parenchymal penetration of Ri7-quantum dots was extremely low and comparable to control IgG. Our results show that systemically administered Ri7-quantum dots complexes undergo extensive endocytosis by brain capillary endothelial cells and open the door for novel therapeutic approaches based on brain endothelial cell drug delivery. © The Author(s) 2015.

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

NASA Technical Reports Server (NTRS)

Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

1997-01-01

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Quantum confinement and magnetic field effects on the electron Landé g factor in GaAs-(Ga,Al)As double quantum wells

NASA Astrophysics Data System (ADS)

Perea, J. Darío; Mejía-Salazar, J. R.; Porras-Montenegro, N.

2011-12-01

Nowadays the spin-related phenomena have attracted great attention for the possible spintronic and optoelectronic applications. The manipulation of the Landé g factor by means of the control of the electron confinement, applied magnetic field and hydrostatic pressure offers the possibility of having a wide range of ways to control single qubit operation and to have pure spin states to guarantee that no losses occur when the electron spins transport information. In this work we have performed a theoretical study of the quantum confinement (geometrical and barrier potential confinements) and growth direction applied magnetic field effects on the conduction-electron effective Landé g factor in GaAs-(Ga,Al)As double quantum wells. Our calculations of the Landé g factor are performed by using the Ogg-McCombe effective Hamiltonian, which includes non-parabolicity and anisotropy effects for the conduction-band electrons. Our theoretical results are given as function of the central barrier widths for different values of the applied magnetic fields. We have found that in this type of heterostructure the geometrical confinement commands the behavior of the electron effective Landé g factor as compared to the effect of the applied magnetic field. Present theoretical reports are in very good agreement with previous experimental and theoretical results.

Steinberg ``AUDIOMAPS" Music Appreciation-Via-Understanding: Special-Relativity + Expectations "Quantum-Theory": a Quantum-ACOUSTO/MUSICO-Dynamics (QA/MD)

NASA Astrophysics Data System (ADS)

Steinberg, R.; Siegel, E.

2010-03-01

``AUDIOMAPS'' music enjoyment/appreciation-via-understanding methodology, versus art, music-dynamics evolves, telling a story in (3+1)-dimensions: trails, frames, timbres, + dynamics amplitude vs. music-score time-series (formal-inverse power- spectrum) surprisingly closely parallels (3+1)-dimensional Einstein(1905) special-relativity ``+'' (with its enjoyment- expectations) a manifestation of quantum-theory expectation- values, together a music quantum-ACOUSTO/MUSICO-dynamics (QA/MD). Analysis via Derrida deconstruction enabled Siegel- Baez ``Category-Semantics'' ``FUZZYICS''=``CATEGORYICS (``SON of 'TRIZ") classic Aristotle ``Square-of-Opposition" (SoO) DEduction-logic, irrespective of Boon-Klimontovich versus Voss- Clark[PRL(77)] music power-spectrum analysis sampling- time/duration controversy: part versus whole, shows that ``AUDIOMAPS" QA/MD reigns supreme as THE music appreciation-via- analysis tool for the listener in musicology!!! Connection to Deutsch-Hartmann-Levitin[This is Your Brain on Music,(2006)] brain/mind-barrier brain/mind-music connection is both subtle and compelling and immediate!!!

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.

2013-09-14

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of amore » dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.« less

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presa, S., E-mail: silvino.presa@tyndall.ie; School of Engineering, University College Cork, Cork; Maaskant, P. P.

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thickermore » barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.« less

Long Life MEM Switch Technology

DTIC Science & Technology

2006-05-23

Dussopt et al. on the two-level switched-capacitors [2], Peroulis et al. on the extended analog varactor [3], B- Kassem at el. on an extended range analog...Katehi, ”Highly reliable analog MEMS varactors,” 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 869-872, June 2004. [4] M. Bakri- Kassem , R. R

Quantum space and quantum completeness

NASA Astrophysics Data System (ADS)

Jurić, Tajron

2018-05-01

Motivated by the question whether quantum gravity can "smear out" the classical singularity we analyze a certain quantum space and its quantum-mechanical completeness. Classical singularity is understood as a geodesic incompleteness, while quantum completeness requires a unique unitary time evolution for test fields propagating on an underlying background. Here the crucial point is that quantum completeness renders the Hamiltonian (or spatial part of the wave operator) to be essentially self-adjoint in order to generate a unique time evolution. We examine a model of quantum space which consists of a noncommutative BTZ black hole probed by a test scalar field. We show that the quantum gravity (noncommutative) effect is to enlarge the domain of BTZ parameters for which the relevant wave operator is essentially self-adjoint. This means that the corresponding quantum space is quantum complete for a larger range of BTZ parameters rendering the conclusion that in the quantum space one observes the effect of "smearing out" the singularity.

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

NASA Technical Reports Server (NTRS)

Brown, E. R.; Sollner, T. C. L. G.; Goodhue, W. D.; Parker, C. D.

1987-01-01

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

ERIC Educational Resources Information Center

Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

2012-01-01

In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

Quantum correlations in multipartite quantum systems

NASA Astrophysics Data System (ADS)

Jafarizadeh, M. A.; Heshmati, A.; Karimi, N.; Yahyavi, M.

2018-03-01

Quantum entanglement is the most famous type of quantum correlation between elements of a quantum system that has a basic role in quantum communication protocols like quantum cryptography, teleportation and Bell inequality detection. However, it has already been shown that various applications in quantum information theory do not require entanglement. Quantum discord as a new kind of quantum correlations beyond entanglement, is the most popular candidate for general quantum correlations. In this paper, first we find the entanglement witness in a particular multipartite quantum system which consists of a N-partite system in 2 n -dimensional space. Then we give an exact analytical formula for the quantum discord of this system. At the end of the paper, we investigate the additivity relation of the quantum correlation and show that this relation is satisfied for a N-partite system with 2 n -dimensional space.

Efficacy of NGR peptide-modified PEGylated quantum dots for crossing the blood-brain barrier and targeted fluorescence imaging of glioma and tumor vasculature.

PubMed

Huang, Ning; Cheng, Si; Zhang, Xiang; Tian, Qi; Pi, Jiangli; Tang, Jun; Huang, Qing; Wang, Feng; Chen, Jin; Xie, Zongyi; Xu, Zhongye; Chen, Weifu; Zheng, Huzhi; Cheng, Yuan

2017-01-01

Delivery of imaging agents to brain glioma is challenging because the blood-brain barrier (BBB) functions as a physiological checkpoint guarding the central nervous system from circulating large molecules. Moreover, the ability of existing probes to target glioma has been insufficient and needs to be improved. In present study, PEG-based long circulation, CdSe/ZnS quantum dots (QDs)-based nanoscale and fluorescence, asparagines-glycine-arginine peptides (NGR)-based specific CD13 recognition were integrated to design and synthesize a novel nanoprobe by conjugating biotinylated NGR peptides to avidin-PEG-coated QDs. Our data showed that the NGR-PEG-QDs were nanoscale with less than 100 nm and were stable in various pH (4.0~8.0). These nanomaterials with non-toxic concentrations could cross the BBB and target CD13-overexpressing glioma and tumor vasculature in vitro and in vivo, contributing to fluorescence imaging of this brain malignancy. These achievements allowed groundbreaking technological advances in targeted fluorescence imaging for the diagnosis and surgical removal of glioma, facilitating potential transformation toward clinical nanomedicine. Copyright © 2016 Elsevier Inc. All rights reserved.

Quantum instanton calculation of rate constant for CH4 + OH → CH3 + H2O reaction: Torsional anharmonicity and kinetic isotope effect

NASA Astrophysics Data System (ADS)

Wang, Wenji; Zhao, Yi

2012-12-01

Thermal rate constants for the title reaction are calculated by using the quantum instanton approximation within the full dimensional Cartesian coordinates. The results reveal that the quantum effect is remarkable for the reaction at both low and high temperatures, and the obtained rates are in good agreement with experimental measurements at high temperatures. Compared to the harmonic approximation, the torsional anharmonic effect of the internal rotation has a little influence on the rates at low temperatures, however, it enhances the rate by about 20% at 1000 K. In addition, the free energy barriers for the isotopic reactions and the temperature dependence of kinetic isotope effects are also investigated. Generally speaking, for the title reaction, the replacement of OH with OD will reduce the free energy barrier, while substituting D for H (connected to C) will increase the free energy barrier.

Submonolayer Quantum Dot Infrared Photodetector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Automatic tuned MRI RF coil for multinuclear imaging of small animals at 3T.

PubMed

Muftuler, L Tugan; Gulsen, Gultekin; Sezen, Kumsal D; Nalcioglu, Orhan

2002-03-01

We have developed an MRI RF coil whose tuning can be adjusted automatically between 120 and 128 MHz for sequential spectroscopic imaging of hydrogen and fluorine nuclei at field strength 3 T. Variable capacitance (varactor) diodes were placed on each rung of an eight-leg low-pass birdcage coil to change the tuning frequency of the coil. The diode junction capacitance can be controlled by the amount of applied reverse bias voltage. Impedance matching was also done automatically by another pair of varactor diodes to obtain the maximum SNR at each frequency. The same bias voltage was applied to the tuning varactors on all rungs to avoid perturbations in the coil. A network analyzer was used to monitor matching and tuning of the coil. A Pentium PC controlled the analyzer through the GPIB bus. A code written in LABVIEW was used to communicate with the network analyzer and adjust the bias voltages of the varactors via D/A converters. Serially programmed D/A converter devices were used to apply the bias voltages to the varactors. Isolation amplifiers were used together with RF choke inductors to provide isolation between the RF coil and the DC bias lines. We acquired proton and fluorine images sequentially from a multicompartment phantom using the designed coil. Good matching and tuning were obtained at both resonance frequencies. The tuning and matching of the coil were changed from one resonance frequency to the other within 60 s. (c) 2002 Elsevier Science (USA).

2D Quantum Mechanical Study of Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Multichannel X-Band Dielectric-Resonator Oscillator

NASA Technical Reports Server (NTRS)

Mysoor, Narayan; Dennis, Matthew; Cook, Brian

2006-01-01

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be

Quantumness-generating capability of quantum dynamics

NASA Astrophysics Data System (ADS)

Li, Nan; Luo, Shunlong; Mao, Yuanyuan

2018-04-01

We study quantumness-generating capability of quantum dynamics, where quantumness refers to the noncommutativity between the initial state and the evolving state. In terms of the commutator of the square roots of the initial state and the evolving state, we define a measure to quantify the quantumness-generating capability of quantum dynamics with respect to initial states. Quantumness-generating capability is absent in classical dynamics and hence is a fundamental characteristic of quantum dynamics. For qubit systems, we present an analytical form for this measure, by virtue of which we analyze several prototypical dynamics such as unitary dynamics, phase damping dynamics, amplitude damping dynamics, and random unitary dynamics (Pauli channels). Necessary and sufficient conditions for the monotonicity of quantumness-generating capability are also identified. Finally, we compare these conditions for the monotonicity of quantumness-generating capability with those for various Markovianities and illustrate that quantumness-generating capability and quantum Markovianity are closely related, although they capture different aspects of quantum dynamics.

Terahertz GaAs/AlAs quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Rozas, G.

2016-03-07

We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al{sub 0.25}Ga{sub 0.75}As lasers with an almost identical design. At the same time, the threshold current density at 10 K is reduced from about 350 A/cm{sup 2} for the GaAs/Al{sub 0.25}Ga{sub 0.75}As laser to about 120 A/cm{sup 2} for the GaAs/AlAs laser. Substituting AlAs for Al{sub 0.25}Ga{sub 0.75}As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of themore » quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys.« less

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Quantum computer games: quantum minesweeper

NASA Astrophysics Data System (ADS)

Gordon, Michal; Gordon, Goren

2010-07-01

The computer game of quantum minesweeper is introduced as a quantum extension of the well-known classical minesweeper. Its main objective is to teach the unique concepts of quantum mechanics in a fun way. Quantum minesweeper demonstrates the effects of superposition, entanglement and their non-local characteristics. While in the classical minesweeper the goal of the game is to discover all the mines laid out on a board without triggering them, in the quantum version there are several classical boards in superposition. The goal is to know the exact quantum state, i.e. the precise layout of all the mines in all the superposed classical boards. The player can perform three types of measurement: a classical measurement that probabilistically collapses the superposition; a quantum interaction-free measurement that can detect a mine without triggering it; and an entanglement measurement that provides non-local information. The application of the concepts taught by quantum minesweeper to one-way quantum computing are also presented.

Quantum ensembles of quantum classifiers.

PubMed

Schuld, Maria; Petruccione, Francesco

2018-02-09

Quantum machine learning witnesses an increasing amount of quantum algorithms for data-driven decision making, a problem with potential applications ranging from automated image recognition to medical diagnosis. Many of those algorithms are implementations of quantum classifiers, or models for the classification of data inputs with a quantum computer. Following the success of collective decision making with ensembles in classical machine learning, this paper introduces the concept of quantum ensembles of quantum classifiers. Creating the ensemble corresponds to a state preparation routine, after which the quantum classifiers are evaluated in parallel and their combined decision is accessed by a single-qubit measurement. This framework naturally allows for exponentially large ensembles in which - similar to Bayesian learning - the individual classifiers do not have to be trained. As an example, we analyse an exponentially large quantum ensemble in which each classifier is weighed according to its performance in classifying the training data, leading to new results for quantum as well as classical machine learning.

Cluster Quantum Chemical Study of the Grignard Reagent Formation

NASA Astrophysics Data System (ADS)

Tulub, A. V.; Porsev, V. V.

The main stages of the Grignard reagent formation are described in a framework of quantum chemical cluster model. We have established two kinds of the adsorption of CH3Hal on Mgn clusters, one of which leads to radical formation and the second is responsible for radical free dissociate adsorption. The charge redistribution in cluster CH3MgnHal result to the strong electrostatic interaction with ether and Grignard reagent formation without any activation barrier.

Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

NASA Astrophysics Data System (ADS)

Liu, Weiwen

The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

Quantum Foundations of Quantum Information

NASA Astrophysics Data System (ADS)

Griffiths, Robert

2009-03-01

The main foundational issue for quantum information is: What is quantum information about? What does it refer to? Classical information typically refers to physical properties, and since classical is a subset of quantum information (assuming the world is quantum mechanical), quantum information should--and, it will be argued, does--refer to quantum physical properties represented by projectors on appropriate subspaces of a quantum Hilbert space. All sorts of microscopic and macroscopic properties, not just measurement outcomes, can be represented in this way, and are thus a proper subject of quantum information. The Stern-Gerlach experiment illustrates this. When properties are compatible, which is to say their projectors commute, Shannon's classical information theory based on statistical correlations extends without difficulty or change to the quantum case. When projectors do not commute, giving rise to characteristic quantum effects, a foundation for the subject can still be constructed by replacing the ``measurement and wave-function collapse'' found in textbooks--an efficient calculational tool, but one giving rise to numerous conceptual difficulties--with a fully consistent and paradox free stochastic formulation of standard quantum mechanics. This formulation is particularly helpful in that it contains no nonlocal superluminal influences; the reason the latter carry no information is that they do not exist.

Quantum memory Quantum memory

NASA Astrophysics Data System (ADS)

Le Gouët, Jean-Louis; Moiseev, Sergey

2012-06-01

Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

From quantum coherence to quantum correlations

NASA Astrophysics Data System (ADS)

Sun, Yuan; Mao, Yuanyuan; Luo, Shunlong

2017-06-01

In quantum mechanics, quantum coherence of a state relative to a quantum measurement can be identified with the quantumness that has to be destroyed by the measurement. In particular, quantum coherence of a bipartite state relative to a local quantum measurement encodes quantum correlations in the state. If one takes minimization with respect to the local measurements, then one is led to quantifiers which capture quantum correlations from the perspective of coherence. In this vein, quantum discord, which quantifies the minimal correlations that have to be destroyed by quantum measurements, can be identified as the minimal coherence, with the coherence measured by the relative entropy of coherence. To advocate and formulate this idea in a general context, we first review coherence relative to Lüders measurements which extends the notion of coherence relative to von Neumann measurements (or equivalently, orthonomal bases), and highlight the observation that quantum discord arises as minimal coherence through two prototypical examples. Then, we introduce some novel measures of quantum correlations in terms of coherence, illustrate them through examples, investigate their fundamental properties and implications, and indicate their applications to quantum metrology.

Applying Quantum Monte Carlo to the Electronic Structure Problem

NASA Astrophysics Data System (ADS)

Powell, Andrew D.; Dawes, Richard

2016-06-01

Two distinct types of Quantum Monte Carlo (QMC) calculations are applied to electronic structure problems such as calculating potential energy curves and producing benchmark values for reaction barriers. First, Variational and Diffusion Monte Carlo (VMC and DMC) methods using a trial wavefunction subject to the fixed node approximation were tested using the CASINO code.[1] Next, Full Configuration Interaction Quantum Monte Carlo (FCIQMC), along with its initiator extension (i-FCIQMC) were tested using the NECI code.[2] FCIQMC seeks the FCI energy for a specific basis set. At a reduced cost, the efficient i-FCIQMC method can be applied to systems in which the standard FCIQMC approach proves to be too costly. Since all of these methods are statistical approaches, uncertainties (error-bars) are introduced for each calculated energy. This study tests the performance of the methods relative to traditional quantum chemistry for some benchmark systems. References: [1] R. J. Needs et al., J. Phys.: Condensed Matter 22, 023201 (2010). [2] G. H. Booth et al., J. Chem. Phys. 131, 054106 (2009).

Stability of excitons in double quantum well: Through electron and holes transmission probabilities

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2017-05-01

Stability of excitons has been analyzed using the transmission probability of its constituent particles in GaAs/Al0.3Ga0.7As Double Quantum Well (DQW) structure by varying well and barrier layer thickness. The effective mass approximation is used and anisotropy in material properties are also considered to get realistic situations. It is observed that tuning barrier layer avails many resonance peaks for the transmission and tuning well width admits maximum transmission at narrow well widths. Every saddle point of the observed transmission coefficients decides the formation, strength and transportation of excitons in DQW.

Investigation of temperature-dependent photoluminescence in multi-quantum wells.

PubMed

Fang, Yutao; Wang, Lu; Sun, Qingling; Lu, Taiping; Deng, Zhen; Ma, Ziguang; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Chen, Hong

2015-07-31

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.

What is quantum in quantum randomness?

PubMed

Grangier, P; Auffèves, A

2018-07-13

It is often said that quantum and classical randomness are of different nature, the former being ontological and the latter epistemological. However, so far the question of 'What is quantum in quantum randomness?', i.e. what is the impact of quantization and discreteness on the nature of randomness, remains to be answered. In a first part, we make explicit the differences between quantum and classical randomness within a recently proposed ontology for quantum mechanics based on contextual objectivity. In this view, quantum randomness is the result of contextuality and quantization. We show that this approach strongly impacts the purposes of quantum theory as well as its areas of application. In particular, it challenges current programmes inspired by classical reductionism, aiming at the emergence of the classical world from a large number of quantum systems. In a second part, we analyse quantum physics and thermodynamics as theories of randomness, unveiling their mutual influences. We finally consider new technological applications of quantum randomness that have opened up in the emerging field of quantum thermodynamics.This article is part of a discussion meeting issue 'Foundations of quantum mechanics and their impact on contemporary society'. © 2018 The Author(s).

Observation of room temperature negative differential resistance in multi-layer heterostructures of quantum dots and conducting polymers.

PubMed

Kannan, V; Kim, M R; Chae, Y S; Ramana, Ch V V; Rhee, J K

2011-01-14

Multi-layer heterostructure negative differential resistance devices based on poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) conducting polymer and CdSe quantum dots is reported. The conducting polymer MEH-PPV acts as a barrier while CdSe quantum dots form the well layer. The devices exhibit negative differential resistance (NDR) at low voltages. For these devices, strong negative differential resistance is observed at room temperature. A maximum value of 51 for the peak-to-valley ratio of current is reported. Tunneling of electrons through the discrete quantum confined states in the CdSe quantum dots is believed to be responsible for the multiple peaks observed in the I-V measurement. Depending on the observed NDR signature, operating mechanisms are explored based on resonant tunneling and Coulomb blockade effects.

Photoinduced currents in metal-barrier-metal junctions

NASA Technical Reports Server (NTRS)

Guedes, M. P.; Gustafson, T. K.; Heiblum, M.; Siu, D. P.; Slayman, C. W.; Whinnery, J. R.; Yasuoka, Y.

1978-01-01

The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.

Layer by Layer Growth of 2D Quantum Superlattices (NBIT III)

DTIC Science & Technology

2017-02-28

building quantum superlatticies using 2D materials as the building blocks. Specifically, we develop methods that allow i) large-scale growth of aligned...superlattice and heterostructures, iii) lateral and clean patterning of 2D materials for atomically-thin circuitry and iv) novel physical properties...high precision and flexibility beyond conventional methods. Moreover, it provides the solutions for current major barrier for 2D materials (e.g

Diamagnetic susceptibility: An indicator of pressure induced donor localization in a double quantum well

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2016-04-01

The influence of pressure along the growth axis on carrier localization in GaAs/Al0.3Ga0.7As Double Quantum Well (DQW) is studied under strongly coupled regime and isolated regimes of the well. The effective mass approximation combined with variation technique is adopted with the inclusion of mismatches in effective mass and dielectric constants of the well and barrier material. Effect of the barrier and well on carrier localization is investigated by observing the diamagnetic susceptibility (χdia) for various impurity locations (zi) and the critical limit of the barrier (Lb ≈ 50 Å) for tunneling has also been estimated. The effect of Γ-Χ crossover due to the application of pressure on the donor localization is picturized through diamagnetic susceptibility.

Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

NASA Astrophysics Data System (ADS)

Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

2017-10-01

Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

InAs based terahertz quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael

2016-01-04

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applyingmore » a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.« less

The quantum physics of synaptic communication via the SNARE protein complex.

PubMed

Georgiev, Danko D; Glazebrook, James F

2018-07-01

Twenty five years ago, Sir John Carew Eccles together with Friedrich Beck proposed a quantum mechanical model of neurotransmitter release at synapses in the human cerebral cortex. The model endorsed causal influence of human consciousness upon the functioning of synapses in the brain through quantum tunneling of unidentified quasiparticles that trigger the exocytosis of synaptic vesicles, thereby initiating the transmission of information from the presynaptic towards the postsynaptic neuron. Here, we provide a molecular upgrade of the Beck and Eccles model by identifying the quantum quasiparticles as Davydov solitons that twist the protein α-helices and trigger exocytosis of synaptic vesicles through helical zipping of the SNARE protein complex. We also calculate the observable probabilities for exocytosis based on the mass of this quasiparticle, along with the characteristics of the potential energy barrier through which tunneling is necessary. We further review the current experimental evidence in support of this novel bio-molecular model as presented. Copyright © 2018 Elsevier Ltd. All rights reserved.

Quantum Computer Games: Quantum Minesweeper

ERIC Educational Resources Information Center

Gordon, Michal; Gordon, Goren

2010-01-01

The computer game of quantum minesweeper is introduced as a quantum extension of the well-known classical minesweeper. Its main objective is to teach the unique concepts of quantum mechanics in a fun way. Quantum minesweeper demonstrates the effects of superposition, entanglement and their non-local characteristics. While in the classical…

Quantum Chess: Making Quantum Phenomena Accessible

NASA Astrophysics Data System (ADS)

Cantwell, Christopher

Quantum phenomena have remained largely inaccessible to the general public. There tends to be a scare factor associated with the word ``Quantum''. This is in large part due to the alien nature of phenomena such as superposition and entanglement. However, Quantum Computing is a very active area of research and one day we will have games that run on those quantum computers. Quantum phenomena such as superposition and entanglement will seem as normal as gravity. Is it possible to create such games today? Can we make games that are built on top of a realistic quantum simulation and introduce players of any background to quantum concepts in a fun and mentally stimulating way? One of the difficulties with any quantum simulation run on a classical computer is that the Hilbert space grows exponentially, making simulations of an appreciable size physically impossible due largely to memory restrictions. Here we will discuss the conception and development of Quantum Chess, and how to overcome some of the difficulties faced. We can then ask the question, ``What's next?'' What are some of the difficulties Quantum Chess still faces, and what is the future of quantum games?

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

PubMed

Walther, T; Krysa, A B

2017-12-01

Quantum cascade lasers can be efficient infrared radiation sources and consist of several hundreds of very thin layers arranged in stacks that are repeated periodically. Both the thicknesses of the individual layers as well as the period lengths need to be monitored to high precision. Different transmission electron microscopy methods have been combined to analyse AlGaAs/GaAs quantum cascade laser structures in cross-section. We found a small parabolic variation of the growth rate during deposition, affecting the stack periodicity and a reduced aluminium content of the AlGaAs barriers, whereas their widths as well as those of the GaAs quantum wells agreed with the nominal values within one atomic layer. Growth on an offcut substrate led to facets and steps at the interfaces. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Inducing injection barrier by covalent functionalization of multiwall carbon nanotubes acting as Moiré crystals

NASA Astrophysics Data System (ADS)

Bonnet, Roméo; Barraud, Clément; Martin, Pascal; Della Rocca, Maria Luisa; Lafarge, Philippe

2016-10-01

Covalent functionalization of multiwall carbon nanotubes is a direct method to suppress the conduction of the outermost shell, subject to interactions with the environment. The rehybridized sp3 external shell of the functionalized multiwall carbon nanotubes becomes naturally a hybrid injection barrier allowing the control of the contact resistances and the study of quantum transport in the more protected inner shells. Charge transport measurements performed on isolated multiwall carbon nanotubes of large diameter show an increase of the contact resistance and stabilization in the MΩ range. Electronic quantum properties of the inner shells are highlighted by the observation of superlattice structures in the conductance, recently attributed to the formation of a one-dimensional Moiré pattern.

Expected number of quantum channels in quantum networks.

PubMed

Chen, Xi; Wang, He-Ming; Ji, Dan-Tong; Mu, Liang-Zhu; Fan, Heng

2015-07-15

Quantum communication between nodes in quantum networks plays an important role in quantum information processing. Here, we proposed the use of the expected number of quantum channels as a measure of the efficiency of quantum communication for quantum networks. This measure quantified the amount of quantum information that can be teleported between nodes in a quantum network, which differs from classical case in that the quantum channels will be consumed if teleportation is performed. We further demonstrated that the expected number of quantum channels represents local correlations depicted by effective circles. Significantly, capacity of quantum communication of quantum networks quantified by ENQC is independent of distance for the communicating nodes, if the effective circles of communication nodes are not overlapped. The expected number of quantum channels can be enhanced through transformations of the lattice configurations of quantum networks via entanglement swapping. Our results can shed lights on the study of quantum communication in quantum networks.

Expected number of quantum channels in quantum networks

PubMed Central

Chen, Xi; Wang, He-Ming; Ji, Dan-Tong; Mu, Liang-Zhu; Fan, Heng

2015-01-01

Quantum communication between nodes in quantum networks plays an important role in quantum information processing. Here, we proposed the use of the expected number of quantum channels as a measure of the efficiency of quantum communication for quantum networks. This measure quantified the amount of quantum information that can be teleported between nodes in a quantum network, which differs from classical case in that the quantum channels will be consumed if teleportation is performed. We further demonstrated that the expected number of quantum channels represents local correlations depicted by effective circles. Significantly, capacity of quantum communication of quantum networks quantified by ENQC is independent of distance for the communicating nodes, if the effective circles of communication nodes are not overlapped. The expected number of quantum channels can be enhanced through transformations of the lattice configurations of quantum networks via entanglement swapping. Our results can shed lights on the study of quantum communication in quantum networks. PMID:26173556

Blind Quantum Signature with Blind Quantum Computation

NASA Astrophysics Data System (ADS)

Li, Wei; Shi, Ronghua; Guo, Ying

2017-04-01

Blind quantum computation allows a client without quantum abilities to interact with a quantum server to perform a unconditional secure computing protocol, while protecting client's privacy. Motivated by confidentiality of blind quantum computation, a blind quantum signature scheme is designed with laconic structure. Different from the traditional signature schemes, the signing and verifying operations are performed through measurement-based quantum computation. Inputs of blind quantum computation are securely controlled with multi-qubit entangled states. The unique signature of the transmitted message is generated by the signer without leaking information in imperfect channels. Whereas, the receiver can verify the validity of the signature using the quantum matching algorithm. The security is guaranteed by entanglement of quantum system for blind quantum computation. It provides a potential practical application for e-commerce in the cloud computing and first-generation quantum computation.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

A Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride (SF6)

DTIC Science & Technology

2014-07-01

BST) is a complex oxide material with ferroic properties which has been considered for applications ranging from non-volatile memory to microwave...utilizing self-aligned etching to create metal-insulator-metal (MIM) varactors . As part of this method we employed reactive ion etching (RIE) to remove BST...of BST removed vs. etch time for Ar:SF6. .........................................................4 Figure 3. SEM cross-section of varactor showing

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

RKKY exchange interaction within the parabolic quantum-well

NASA Astrophysics Data System (ADS)

Baķ, Zygmunt

2001-03-01

Indirect magnetic exchange in a semimagnetic semiconductor heterostructure with the parabolic quantum-well barrier potential is considered. Within the analytical method, we provide the exact derivation of the spatial dependence of the RKKY exchange integral. Using the effective dimensionality approach, we show that the spectral dimensionality of the free electron (hole) system equals four. We prove, that the RKKY exchange integral shows conventional, sign reversal variation with the 2 kF period, however, the envelope function falls off in a manner characteristic to 4D systems.

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

, Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links

NASA Astrophysics Data System (ADS)

Blauvelt, H.; Thurmond, G.; Parsons, J.; Lewis, D.; Yen, H.

1984-08-01

High-speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3-dB bandwidths of 20 GHz and quantum efficiencies as high as 70 percent. The response of the detectors to light modulated at 1-18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.

Electromagnetically induced transparency in a multilayered spherical quantum dot with hydrogenic impurity

NASA Astrophysics Data System (ADS)

Pavlović, Vladan; Šušnjar, Marko; Petrović, Katarina; Stevanović, Ljiljana

2018-04-01

In this paper the effects of size, hydrostatic pressure and temperature on electromagnetically induced transparency, as well as on absorption and the dispersion properties of multilayered spherical quantum dot with hydrogenic impurity are theoretically investigated. Energy eigenvalues and wavefunctions of quantum systems in three-level and four-level configurations are calculated using the shooting method, while optical properties are obtained using the density matrix formalism and master equations. It is shown that peaks of the optical properties experience a blue-shift with increasing hydrostatic pressure and red-shift with increasing temperature. The changes of optical properties as a consequence of changes in barrier wells widths are non-monotonic, and these changes are discussed in detail.

Numerical simulation of tunneling through arbitrary potential barriers applied on MIM and MIIM rectenna diodes

NASA Astrophysics Data System (ADS)

Abdolkader, Tarek M.; Shaker, Ahmed; Alahmadi, A. N. M.

2018-07-01

With the continuous miniaturization of electronic devices, quantum-mechanical effects such as tunneling become more effective in many device applications. In this paper, a numerical simulation tool is developed under a MATLAB environment to calculate the tunneling probability and current through an arbitrary potential barrier comparing three different numerical techniques: the finite difference method, transfer matrix method, and transmission line method. For benchmarking, the tool is applied to many case studies such as the rectangular single barrier, rectangular double barrier, and continuous bell-shaped potential barrier, each compared to analytical solutions and giving the dependence of the error on the number of mesh points. In addition, a thorough study of the J ‑ V characteristics of MIM and MIIM diodes, used as rectifiers for rectenna solar cells, is presented and simulations are compared to experimental results showing satisfactory agreement. On the undergraduate level, the tool provides a deeper insight for students to compare numerical techniques used to solve various tunneling problems and helps students to choose a suitable technique for a certain application.

Quantum machine learning for quantum anomaly detection

NASA Astrophysics Data System (ADS)

Liu, Nana; Rebentrost, Patrick

2018-04-01

Anomaly detection is used for identifying data that deviate from "normal" data patterns. Its usage on classical data finds diverse applications in many important areas such as finance, fraud detection, medical diagnoses, data cleaning, and surveillance. With the advent of quantum technologies, anomaly detection of quantum data, in the form of quantum states, may become an important component of quantum applications. Machine-learning algorithms are playing pivotal roles in anomaly detection using classical data. Two widely used algorithms are the kernel principal component analysis and the one-class support vector machine. We find corresponding quantum algorithms to detect anomalies in quantum states. We show that these two quantum algorithms can be performed using resources that are logarithmic in the dimensionality of quantum states. For pure quantum states, these resources can also be logarithmic in the number of quantum states used for training the machine-learning algorithm. This makes these algorithms potentially applicable to big quantum data applications.

Quantum Walk Schemes for Universal Quantum Computation

NASA Astrophysics Data System (ADS)

Underwood, Michael S.

Random walks are a powerful tool for the efficient implementation of algorithms in classical computation. Their quantum-mechanical analogues, called quantum walks, hold similar promise. Quantum walks provide a model of quantum computation that has recently been shown to be equivalent in power to the standard circuit model. As in the classical case, quantum walks take place on graphs and can undergo discrete or continuous evolution, though quantum evolution is unitary and therefore deterministic until a measurement is made. This thesis considers the usefulness of continuous-time quantum walks to quantum computation from the perspectives of both their fundamental power under various formulations, and their applicability in practical experiments. In one extant scheme, logical gates are effected by scattering processes. The results of an exhaustive search for single-qubit operations in this model are presented. It is shown that the number of distinct operations increases exponentially with the number of vertices in the scattering graph. A catalogue of all graphs on up to nine vertices that implement single-qubit unitaries at a specific set of momenta is included in an appendix. I develop a novel scheme for universal quantum computation called the discontinuous quantum walk, in which a continuous-time quantum walker takes discrete steps of evolution via perfect quantum state transfer through small 'widget' graphs. The discontinuous quantum-walk scheme requires an exponentially sized graph, as do prior discrete and continuous schemes. To eliminate the inefficient vertex resource requirement, a computation scheme based on multiple discontinuous walkers is presented. In this model, n interacting walkers inhabiting a graph with 2n vertices can implement an arbitrary quantum computation on an input of length n, an exponential savings over previous universal quantum walk schemes. This is the first quantum walk scheme that allows for the application of quantum error correction

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Quantum information. Unconditional quantum teleportation between distant solid-state quantum bits.

PubMed

Pfaff, W; Hensen, B J; Bernien, H; van Dam, S B; Blok, M S; Taminiau, T H; Tiggelman, M J; Schouten, R N; Markham, M; Twitchen, D J; Hanson, R

2014-08-01

Realizing robust quantum information transfer between long-lived qubit registers is a key challenge for quantum information science and technology. Here we demonstrate unconditional teleportation of arbitrary quantum states between diamond spin qubits separated by 3 meters. We prepare the teleporter through photon-mediated heralded entanglement between two distant electron spins and subsequently encode the source qubit in a single nuclear spin. By realizing a fully deterministic Bell-state measurement combined with real-time feed-forward, quantum teleportation is achieved upon each attempt with an average state fidelity exceeding the classical limit. These results establish diamond spin qubits as a prime candidate for the realization of quantum networks for quantum communication and network-based quantum computing. Copyright © 2014, American Association for the Advancement of Science.

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH 3 molecular beam epitaxy

DOE PAGES

Browne, David A.; Wu, Yuh -Renn; Speck, James S.; ...

2015-05-08

Unipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In 0.14Ga 0.86N and In 0.19Ga 0.81N. Diode-like currentmore » voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. Furthermore, a drift diffusion Schrodinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.« less

Hybrid Quantum Mechanical/Molecular Mechanics Study of the SN2 Reaction of CH3Cl+OH- in Water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Hongyun; Wang, Dunyou; Valiev, Marat

2011-11-03

The SN2 mechanism for the reaction of CH3Cl + OH- in aqueous solution was investigated using combined quantum mechanical and molecular mechanics methodology. We analyzed structures of reactant, transition and product states along the reaction pathway. The free energy profile was calculated using the multi-layered representation with the DFT and CCSD(T) level of theory for the quantum-mechanical description of the reactive region. Our results show that the aqueous environment has a significant impact on the reaction process. We find that solvation energy contribution raises the reaction barrier by ~18.9 kcal/mol and the reaction free energy by ~24.5 kcal/mol. The presencemore » of the solvent also induces perturbations in the electronic structure of the solute leading to an increase of 3.5 kcal/mol for the reaction barrier and a decrease of 5.6 kcal/mol for the reaction free energy respectively. Combining the results of two previous calculation results on CHCl3 + OH- and CH2Cl2 + OH- reactions in water, we demonstrate that increase in the chlorination of the methyl group (from CH3Cl to CHCl3) is accompanied by the decrease in the free energy reaction barrier, with the CH3Cl + OH- having the largest barrier among the three reactions.« less

Parametric Quantum Search Algorithm as Quantum Walk: A Quantum Simulation

NASA Astrophysics Data System (ADS)

Ellinas, Demosthenes; Konstandakis, Christos

2016-02-01

Parametric quantum search algorithm (PQSA) is a form of quantum search that results by relaxing the unitarity of the original algorithm. PQSA can naturally be cast in the form of quantum walk, by means of the formalism of oracle algebra. This is due to the fact that the completely positive trace preserving search map used by PQSA, admits a unitarization (unitary dilation) a la quantum walk, at the expense of introducing auxiliary quantum coin-qubit space. The ensuing QW describes a process of spiral motion, chosen to be driven by two unitary Kraus generators, generating planar rotations of Bloch vector around an axis. The quadratic acceleration of quantum search translates into an equivalent quadratic saving of the number of coin qubits in the QW analogue. The associated to QW model Hamiltonian operator is obtained and is shown to represent a multi-particle long-range interacting quantum system that simulates parametric search. Finally, the relation of PQSA-QW simulator to the QW search algorithm is elucidated.

Quantum demultiplexer of quantum parameter-estimation information in quantum networks

NASA Astrophysics Data System (ADS)

Xie, Yanqing; Huang, Yumeng; Wu, Yinzhong; Hao, Xiang

2018-05-01

The quantum demultiplexer is constructed by a series of unitary operators and multipartite entangled states. It is used to realize information broadcasting from an input node to multiple output nodes in quantum networks. The scheme of quantum network communication with respect to phase estimation is put forward through the demultiplexer subjected to amplitude damping noises. The generalized partial measurements can be applied to protect the transferring efficiency from environmental noises in the protocol. It is found out that there are some optimal coherent states which can be prepared to enhance the transmission of phase estimation. The dynamics of state fidelity and quantum Fisher information are investigated to evaluate the feasibility of the network communication. While the state fidelity deteriorates rapidly, the quantum Fisher information can be enhanced to a maximum value and then decreases slowly. The memory effect of the environment induces the oscillations of fidelity and quantum Fisher information. The adjustment of the strength of partial measurements is helpful to increase quantum Fisher information.

Research progress on quantum informatics and quantum computation

NASA Astrophysics Data System (ADS)

Zhao, Yusheng

2018-03-01

Quantum informatics is an emerging interdisciplinary subject developed by the combination of quantum mechanics, information science, and computer science in the 1980s. The birth and development of quantum information science has far-reaching significance in science and technology. At present, the application of quantum information technology has become the direction of people’s efforts. The preparation, storage, purification and regulation, transmission, quantum coding and decoding of quantum state have become the hotspot of scientists and technicians, which have a profound impact on the national economy and the people’s livelihood, technology and defense technology. This paper first summarizes the background of quantum information science and quantum computer and the current situation of domestic and foreign research, and then introduces the basic knowledge and basic concepts of quantum computing. Finally, several quantum algorithms are introduced in detail, including Quantum Fourier transform, Deutsch-Jozsa algorithm, Shor’s quantum algorithm, quantum phase estimation.

Some new reaction pathways for the formation of cytosine in interstellar space - A quantum chemical study

NASA Astrophysics Data System (ADS)

Gupta, V. P.; Tandon, Poonam; Mishra, Priti

2013-03-01

The detection of nucleic acid bases in carbonaceous meteorites suggests that their formation and survival is possible outside of the Earth. Small N-heterocycles, including pyrimidine, purines and nucleobases, have been extensively sought in the interstellar medium. It has been suggested theoretically that reactions between some interstellar molecules may lead to the formation of cytosine, uracil and thymine though these processes involve significantly high potential barriers. We attempted therefore to use quantum chemical techniques to explore if cytosine can possibly form in the interstellar space by radical-radical and radical-molecule interaction schemes, both in the gas phase and in the grains, through barrier-less or low barrier pathways. Results of DFT calculations for the formation of cytosine starting from some of the simple molecules and radicals detected in the interstellar space are being reported. Global and local descriptors such as molecular hardness, softness and electrophilicity, and condensed Fukui functions and local philicity indices were used to understand the mechanistic aspects of chemical reaction. The presence and nature of weak bonds in the molecules and transition states formed during the reaction process have been ascertained using Bader's quantum theory of atoms in molecules (QTAIMs). Two exothermic reaction pathways starting from propynylidyne (CCCH) and cyanoacetylene (HCCCN), respectively, have been identified. While the first reaction path is found to be totally exothermic, it involves a barrier of 12.5 kcal/mol in the gas phase against the lowest value of about 32 kcal/mol reported in the literature. The second path is both exothermic and barrier-less. The later has, therefore, a greater probability of occurrence in the cold interstellar clouds (10-50 K).

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Transport and Quantum Coherence in Graphene Rings: Aharonov-Bohm Oscillations, Klein Tunneling, and Particle Localization

NASA Astrophysics Data System (ADS)

Filusch, Alexander; Wurl, Christian; Pieper, Andreas; Fehske, Holger

2018-06-01

Simulating quantum transport through mesoscopic, ring-shaped graphene structures, we address various quantum coherence and interference phenomena. First, a perpendicular magnetic field, penetrating the graphene ring, gives rise to Aharonov-Bohm oscillations in the conductance as a function of the magnetic flux, on top of the universal conductance fluctuations. At very high fluxes, the interference gets suppressed and quantum Hall edge channels develop. Second, applying an electrostatic potential to one of the ring arms, nn'n- or npn-junctions can be realized with particle transmission due to normal tunneling or Klein tunneling. In the latter case, the Aharonov-Bohm oscillations weaken for smooth barriers. Third, if potential disorder comes in to play, both Aharonov-Bohm and Klein tunneling effects rate down, up to the point where particle localization sets in.

Quantum probability and quantum decision-making.

PubMed

Yukalov, V I; Sornette, D

2016-01-13

A rigorous general definition of quantum probability is given, which is valid not only for elementary events but also for composite events, for operationally testable measurements as well as for inconclusive measurements, and also for non-commuting observables in addition to commutative observables. Our proposed definition of quantum probability makes it possible to describe quantum measurements and quantum decision-making on the same common mathematical footing. Conditions are formulated for the case when quantum decision theory reduces to its classical counterpart and for the situation where the use of quantum decision theory is necessary. © 2015 The Author(s).

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

NASA Astrophysics Data System (ADS)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Fermionic entanglement via quantum walks in quantum dots

NASA Astrophysics Data System (ADS)

Melnikov, Alexey A.; Fedichkin, Leonid E.

2018-02-01

Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.

Ferroelectric tunnel junctions with multi-quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn; Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ju, Gunwu; Na, Byung Hoon

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Noncontact Characterization of PV Detector Arrays

DTIC Science & Technology

1990-06-01

11-7 3 III DIODE ARRAY AS A SAW CONVOLVER/STORAGE CORRELATOR .... III-1 III.A NONLINEAR ( VARACTOR ) ACTION OF THE DIODES .......................... I...associated with the diodes in the detector array. The varactor action of the diodes produces a voltage across the diodes which is pro- portional to the...type of interactions desired herein. An alternative approach is to em- ploy thin dielectric overlays, such as zinc oxide or silicon nitride

Efficient quantum walk on a quantum processor

PubMed Central

Qiang, Xiaogang; Loke, Thomas; Montanaro, Ashley; Aungskunsiri, Kanin; Zhou, Xiaoqi; O'Brien, Jeremy L.; Wang, Jingbo B.; Matthews, Jonathan C. F.

2016-01-01

The random walk formalism is used across a wide range of applications, from modelling share prices to predicting population genetics. Likewise, quantum walks have shown much potential as a framework for developing new quantum algorithms. Here we present explicit efficient quantum circuits for implementing continuous-time quantum walks on the circulant class of graphs. These circuits allow us to sample from the output probability distributions of quantum walks on circulant graphs efficiently. We also show that solving the same sampling problem for arbitrary circulant quantum circuits is intractable for a classical computer, assuming conjectures from computational complexity theory. This is a new link between continuous-time quantum walks and computational complexity theory and it indicates a family of tasks that could ultimately demonstrate quantum supremacy over classical computers. As a proof of principle, we experimentally implement the proposed quantum circuit on an example circulant graph using a two-qubit photonics quantum processor. PMID:27146471

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot.

PubMed

Verma, V B; Stevens, Martin J; Silverman, K L; Dias, N L; Garg, A; Coleman, J J; Mirin, R P

2011-02-28

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

PubMed

Wang, T; Puchtler, T J; Zhu, T; Jarman, J C; Nuttall, L P; Oliver, R A; Taylor, R A

2017-07-13

Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g (2) (0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.

Implementing quantum gates through scattering between a static and a flying qubit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cordourier-Maruri, G.; Coss, R. de; Ciccarello, F.

2010-11-15

We investigate whether a two-qubit quantum gate can be implemented in a scattering process involving a flying and a static qubit. To this end, we focus on a paradigmatic setup made out of a mobile particle and a quantum impurity, whose respective spin degrees of freedom couple to each other during a one-dimensional scattering process. Once a condition for the occurrence of quantum gates is derived in terms of spin-dependent transmission coefficients, we show that this can be actually fulfilled through the insertion of an additional narrow potential barrier. An interesting observation is that under resonance conditions this procedure enablesmore » a gate only for isotropic Heisenberg (exchange) interactions and fails for an XY interaction. We show the existence of parameter regimes for which gates able to establish a maximum amount of entanglement can be implemented. The gates are found to be robust to variations of the optimal parameters.« less

Emergent mechanics, quantum and un-quantum

NASA Astrophysics Data System (ADS)

Ralston, John P.

2013-10-01

There is great interest in quantum mechanics as an "emergent" phenomenon. The program holds that nonobvious patterns and laws can emerge from complicated physical systems operating by more fundamental rules. We find a new approach where quantum mechanics itself should be viewed as an information management tool not derived from physics nor depending on physics. The main accomplishment of quantum-style theory comes in expanding the notion of probability. We construct a map from macroscopic information as data" to quantum probability. The map allows a hidden variable description for quantum states, and efficient use of the helpful tools of quantum mechanics in unlimited circumstances. Quantum dynamics via the time-dependent Shroedinger equation or operator methods actually represents a restricted class of classical Hamiltonian or Lagrangian dynamics, albeit with different numbers of degrees of freedom. We show that under wide circumstances such dynamics emerges from structureless dynamical systems. The uses of the quantum information management tools are illustrated by numerical experiments and practical applications

Quantum dynamics in strong fluctuating fields

NASA Astrophysics Data System (ADS)

Goychuk, Igor; Hänggi, Peter

state fluctuations531 2.3. Averaging the quantum propagator533  2.3.1. Kubo oscillator535  2.3.2. Averaged dynamics of two-level quantum systems exposed to two-state stochastic fields537 2.4. Projection operator method: a primer5403. Two-state quantum dynamics in periodic fields542 3.1. Coherent destruction of tunnelling542 3.2. Driving-induced tunnelling oscillations (DITO)5434. Dissipative quantum dynamics in strong time-dependent fields544 4.1. General formalism544  4.1.1. Weak-coupling approximation545  4.1.2. Markovian approximation: Generalised Redfield Equations5475. Application I: Quantum relaxation in driven, dissipative two-level systems548 5.1. Decoupling approximation for fast fluctuating energy levels550  5.1.1. Control of quantum rates551  5.1.2. Stochastic cooling and inversion of level populations552  5.1.3. Emergence of an effective energy bias553 5.2. Quantum relaxation in strong periodic fields554 5.3. Approximation of time-dependent rates554 5.4. Exact averaging for dichotomous Markovian fluctuations5556. Application II: Driven electron transfer within a spin-boson description557 6.1. Curve-crossing problems with dissipation558 6.2. Weak system-bath coupling559 6.3. Beyond weak-coupling theory: Strong system-bath coupling563  6.3.1. Fast fluctuating energy levels565  6.3.2. Exact averaging over dichotomous fluctuations of the energy levels566  6.3.3. Electron transfer in fast oscillating periodic fields567  6.3.4. Dichotomously fluctuating tunnelling barrier5687. Quantum transport in dissipative tight-binding models subjected tostrong external fields569 7.1. Noise-induced absolute negative mobility571 7.2. Dissipative quantum rectifiers573 7.3. Limit of vanishing dissipation575 7.4. Case of harmonic mixing drive5758. Summary576Acknowledgements578References579

Fabrication and characterization of Au/n-CdTe Schottky barrier under illumination and dark

NASA Astrophysics Data System (ADS)

Bera, Swades Ranjan; Saha, Satyajit

2018-04-01

CdTe nanoparticles have been grown by chemical reduction method using EDA as capping agent. These are used to fabricate Schottky barrier in a simple cost-effective way at room temperature. The grown nanoparticles are structurally characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM). The optical properties of nano CdTe is characterized by UV-Vis absorption spectra, PL spectra. The band gap of the CdTe nanoparticles is increased as compared to CdTe bulk form indicating there is blue shift. The increase of band gap is due to quantum confinement. Photoluminescence spectra shows peak which corresponds to emission from surface state. CdTe nanofilm is grown on ITO coated glass substrate by dipping it on toluene containing dispersed CdTe nanoparticles. Schottky barrier of Au/n-CdTe is fabricated on ITO coated glass by vacuum deposition of gold. I- V and C- V characteristics of Au/n-CdTe Schottky barrier junction have been studied under dark and light condition. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance-voltage measurements.

Experimental quantum forgery of quantum optical money

NASA Astrophysics Data System (ADS)

Bartkiewicz, Karol; Černoch, Antonín; Chimczak, Grzegorz; Lemr, Karel; Miranowicz, Adam; Nori, Franco

2017-03-01

Unknown quantum information cannot be perfectly copied (cloned). This statement is the bedrock of quantum technologies and quantum cryptography, including the seminal scheme of Wiesner's quantum money, which was the first quantum-cryptographic proposal. Surprisingly, to our knowledge, quantum money has not been tested experimentally yet. Here, we experimentally revisit the Wiesner idea, assuming a banknote to be an image encoded in the polarization states of single photons. We demonstrate that it is possible to use quantum states to prepare a banknote that cannot be ideally copied without making the owner aware of only unauthorized actions. We provide the security conditions for quantum money by investigating the physically-achievable limits on the fidelity of 1-to-2 copying of arbitrary sequences of qubits. These results can be applied as a security measure in quantum digital right management.

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Maremyanin, K. V.

2017-01-15

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

Quantum thermodynamic cycles and quantum heat engines. II.

PubMed

Quan, H T

2009-04-01

We study the quantum-mechanical generalization of force or pressure, and then we extend the classical thermodynamic isobaric process to quantum-mechanical systems. Based on these efforts, we are able to study the quantum version of thermodynamic cycles that consist of quantum isobaric processes, such as the quantum Brayton cycle and quantum Diesel cycle. We also consider the implementation of the quantum Brayton cycle and quantum Diesel cycle with some model systems, such as single particle in a one-dimensional box and single-mode radiation field in a cavity. These studies lay the microscopic (quantum-mechanical) foundation for Szilard-Zurek single-molecule engine.

Quantum Tunnelling to the Origin and Evolution of Life

PubMed Central

Trixler, Frank

2013-01-01

Quantum tunnelling is a phenomenon which becomes relevant at the nanoscale and below. It is a paradox from the classical point of view as it enables elementary particles and atoms to permeate an energetic barrier without the need for sufficient energy to overcome it. Tunnelling might seem to be an exotic process only important for special physical effects and applications such as the Tunnel Diode, Scanning Tunnelling Microscopy (electron tunnelling) or Near-field Optical Microscopy operating in photon tunnelling mode. However, this review demonstrates that tunnelling can do far more, being of vital importance for life: physical and chemical processes which are crucial in theories about the origin and evolution of life can be traced directly back to the effects of quantum tunnelling. These processes include the chemical evolution in stellar interiors and within the cold interstellar medium, prebiotic chemistry in the atmosphere and subsurface of planetary bodies, planetary habitability via insolation and geothermal heat as well as the function of biomolecular nanomachines. This review shows that quantum tunnelling has many highly important implications to the field of molecular and biological evolution, prebiotic chemistry and astrobiology. PMID:24039543

The Quantum Steganography Protocol via Quantum Noisy Channels

NASA Astrophysics Data System (ADS)

Wei, Zhan-Hong; Chen, Xiu-Bo; Niu, Xin-Xin; Yang, Yi-Xian

2015-08-01

As a promising branch of quantum information hiding, Quantum steganography aims to transmit secret messages covertly in public quantum channels. But due to environment noise and decoherence, quantum states easily decay and change. Therefore, it is very meaningful to make a quantum information hiding protocol apply to quantum noisy channels. In this paper, we make the further research on a quantum steganography protocol for quantum noisy channels. The paper proved that the protocol can apply to transmit secret message covertly in quantum noisy channels, and explicity showed quantum steganography protocol. In the protocol, without publishing the cover data, legal receivers can extract the secret message with a certain probability, which make the protocol have a good secrecy. Moreover, our protocol owns the independent security, and can be used in general quantum communications. The communication, which happen in our protocol, do not need entangled states, so our protocol can be used without the limitation of entanglement resource. More importantly, the protocol apply to quantum noisy channels, and can be used widely in the future quantum communication.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Quantum random oracle model for quantum digital signature

NASA Astrophysics Data System (ADS)

Shang, Tao; Lei, Qi; Liu, Jianwei

2016-10-01

The goal of this work is to provide a general security analysis tool, namely, the quantum random oracle (QRO), for facilitating the security analysis of quantum cryptographic protocols, especially protocols based on quantum one-way function. QRO is used to model quantum one-way function and different queries to QRO are used to model quantum attacks. A typical application of quantum one-way function is the quantum digital signature, whose progress has been hampered by the slow pace of the experimental realization. Alternatively, we use the QRO model to analyze the provable security of a quantum digital signature scheme and elaborate the analysis procedure. The QRO model differs from the prior quantum-accessible random oracle in that it can output quantum states as public keys and give responses to different queries. This tool can be a test bed for the cryptanalysis of more quantum cryptographic protocols based on the quantum one-way function.

Quantum tunneling of thermal protons through pristine graphene.

PubMed

Poltavsky, Igor; Zheng, Limin; Mortazavi, Majid; Tkatchenko, Alexandre

2018-05-28

Engineering of atomically thin membranes for hydrogen isotope separation is an actual challenge which has a broad range of applications. Recent experiments [M. Lozada-Hidalgo et al., Science 351, 68 (2016)] unambiguously demonstrate an order-of-magnitude difference in permeabilities of graphene-based membranes to protons and deuterons at ambient conditions, making such materials promising for novel separation technologies. Here we demonstrate that the permeability mechanism in such systems changes from quantum tunneling for protons to quasi-classical transport for heavier isotopes. Quantum nuclear effects exhibit large temperature and mass dependence, modifying the Arrhenius activation energy and Arrhenius prefactor for protons by more than 0.5 eV and by seven orders of magnitude correspondingly. Our findings not only shed light on the separation process for hydrogen isotope ions passing through pristine graphene but also offer new insights for controlling ion transport mechanisms in nanostructured separation membranes by manipulating the shape of the barrier and transport process conditions.

Diffusion barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1983-01-01

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

Proton Transfer and Low-Barrier Hydrogen Bonding: a Shifting Vibrational Landscape Dictated by Large Amplitude Tunneling

NASA Astrophysics Data System (ADS)

Vealey, Zachary; Foguel, Lidor; Vaccaro, Patrick

2017-06-01

Our fundamental understanding of synergistic hydrogen-bonding and proton-transfer phenomena has been advanced immensely by studies of model systems in which the coherent transduction of hydrons is mediated by two degenerate equilibrium configurations that are isolated from one another by a potential barrier of substantial height. This topography advantageously affords unambiguous signatures for the underlying state-resolved dynamics in the form of tunneling-induced spectral bifurcations, the magnitudes of which encode both the overall efficacy and the detailed mechanism of the unimolecular transformation. As a prototypical member of this class of compounds, 6-hydroxy-2-formylfulvene (HFF) supports an unusual quasi-linear O-H...O \\leftrightarrow O...H-O reaction coordinate that presents a minimal impediment to proton migration - a situation commensurate with the concepts of low-barrier hydrogen bonding (which are characterized by great strength, short distance, and a vanishingly small barrier for hydron migration). A variety of fluorescence-based, laser-spectroscopic probes have been deployed in a cold supersonic free-jet expansion to explore the vibrational landscape and anomalously large tunneling-induced shifts that dominate the ˜{X}^{1}A_{1} potential-energy surface of HFF, thus revealing the most rapid proton tunneling ever reported for a molecular ground state (τ_{pt}≤120fs). The surprising efficiency of such tunneling-mediated processes stems from proximity of the zero-point level to the barrier crest and produces a dramatic alteration in the canonical pattern of vibrational features that reflects, in part, the subtle transition from quantum-mechanical barrier penetration to classical over-the-barrier dynamics. The ultrafast proton-transfer regime that characterizes the ˜{X}^{1}A_{1} manifold will be juxtaposed against analogous findings for the lowest-lying singlet excited state ˜{A}^{1}B_{2} (π*←π), where a marked change in the nature of the

Photocurrent Cancellation Due to Barrier Asymmetry in GaAs/AlGaAs Heterostructure Infrared Detectors

DTIC Science & Technology

2014-05-01

with previous work published on QWIP current mechanisms. The Barrier Workfunction and Collection Efficiency give the relevant values obtained by using...infrared photodetectors ( QWIPs ,) multiple quantum well (MQW,) and superlattice structures. 15 2.5.1 Heterojunction Interfacial Workfunction Internal...for aluminum fractions of x = 0.28, 0.37, and 0.57, respectively. Similar results were found previously14 by Tsai et. al. in GaAs/AlGaAs QWIPs

The Particle inside a Ring: A Two-Dimensional Quantum Problem Visualized by Scanning Tunneling Microscopy

ERIC Educational Resources Information Center

Ellison, Mark D.

2008-01-01

The one-dimensional particle-in-a-box model used to introduce quantum mechanics to students suffers from a tenuous connection to a real physical system. This article presents a two-dimensional model, the particle confined within a ring, that directly corresponds to observations of surface electrons in a metal trapped inside a circular barrier.…

Quantum technology past, present, future: quantum energetics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Choi, Sang H.

2017-04-01

Since the development of quantum physics in the early part of the 1900s, this field of study has made remarkable contributions to our civilization. Some of these advances include lasers, light-emitting diodes (LED), sensors, spectroscopy, quantum dots, quantum gravity and quantum entanglements. In 1998, the NASA Langley Research Center established a quantum technology committee to monitor the progress in this area and initiated research to determine the potential of quantum technology for future NASA missions. The areas of interest in quantum technology at NASA included fundamental quantum-optics materials associated with quantum dots and quantum wells, device-oriented photonic crystals, smart optics, quantum conductors, quantum information and computing, teleportation theorem, and quantum energetics. A brief review of the work performed, the progress made in advancing these technologies, and the potential NASA applications of quantum technology will be presented.

Quantum teleportation between remote atomic-ensemble quantum memories

PubMed Central

Bao, Xiao-Hui; Xu, Xiao-Fan; Li, Che-Ming; Yuan, Zhen-Sheng; Lu, Chao-Yang; Pan, Jian-Wei

2012-01-01

Quantum teleportation and quantum memory are two crucial elements for large-scale quantum networks. With the help of prior distributed entanglement as a “quantum channel,” quantum teleportation provides an intriguing means to faithfully transfer quantum states among distant locations without actual transmission of the physical carriers [Bennett CH, et al. (1993) Phys Rev Lett 70(13):1895–1899]. Quantum memory enables controlled storage and retrieval of fast-flying photonic quantum bits with stationary matter systems, which is essential to achieve the scalability required for large-scale quantum networks. Combining these two capabilities, here we realize quantum teleportation between two remote atomic-ensemble quantum memory nodes, each composed of ∼108 rubidium atoms and connected by a 150-m optical fiber. The spin wave state of one atomic ensemble is mapped to a propagating photon and subjected to Bell state measurements with another single photon that is entangled with the spin wave state of the other ensemble. Two-photon detection events herald the success of teleportation with an average fidelity of 88(7)%. Besides its fundamental interest as a teleportation between two remote macroscopic objects, our technique may be useful for quantum information transfer between different nodes in quantum networks and distributed quantum computing. PMID:23144222

Quantum teleportation between remote atomic-ensemble quantum memories.

PubMed

Bao, Xiao-Hui; Xu, Xiao-Fan; Li, Che-Ming; Yuan, Zhen-Sheng; Lu, Chao-Yang; Pan, Jian-Wei

2012-12-11

Quantum teleportation and quantum memory are two crucial elements for large-scale quantum networks. With the help of prior distributed entanglement as a "quantum channel," quantum teleportation provides an intriguing means to faithfully transfer quantum states among distant locations without actual transmission of the physical carriers [Bennett CH, et al. (1993) Phys Rev Lett 70(13):1895-1899]. Quantum memory enables controlled storage and retrieval of fast-flying photonic quantum bits with stationary matter systems, which is essential to achieve the scalability required for large-scale quantum networks. Combining these two capabilities, here we realize quantum teleportation between two remote atomic-ensemble quantum memory nodes, each composed of ∼10(8) rubidium atoms and connected by a 150-m optical fiber. The spin wave state of one atomic ensemble is mapped to a propagating photon and subjected to Bell state measurements with another single photon that is entangled with the spin wave state of the other ensemble. Two-photon detection events herald the success of teleportation with an average fidelity of 88(7)%. Besides its fundamental interest as a teleportation between two remote macroscopic objects, our technique may be useful for quantum information transfer between different nodes in quantum networks and distributed quantum computing.

Aggregating quantum repeaters for the quantum internet

NASA Astrophysics Data System (ADS)

Azuma, Koji; Kato, Go

2017-09-01

The quantum internet holds promise for accomplishing quantum teleportation and unconditionally secure communication freely between arbitrary clients all over the globe, as well as the simulation of quantum many-body systems. For such a quantum internet protocol, a general fundamental upper bound on the obtainable entanglement or secret key has been derived [K. Azuma, A. Mizutani, and H.-K. Lo, Nat. Commun. 7, 13523 (2016), 10.1038/ncomms13523]. Here we consider its converse problem. In particular, we present a universal protocol constructible from any given quantum network, which is based on running quantum repeater schemes in parallel over the network. For arbitrary lossy optical channel networks, our protocol has no scaling gap with the upper bound, even based on existing quantum repeater schemes. In an asymptotic limit, our protocol works as an optimal entanglement or secret-key distribution over any quantum network composed of practical channels such as erasure channels, dephasing channels, bosonic quantum amplifier channels, and lossy optical channels.

Quantum Secure Direct Communication with Quantum Memory

NASA Astrophysics Data System (ADS)

Zhang, Wei; Ding, Dong-Sheng; Sheng, Yu-Bo; Zhou, Lan; Shi, Bao-Sen; Guo, Guang-Can

2017-06-01

Quantum communication provides an absolute security advantage, and it has been widely developed over the past 30 years. As an important branch of quantum communication, quantum secure direct communication (QSDC) promotes high security and instantaneousness in communication through directly transmitting messages over a quantum channel. The full implementation of a quantum protocol always requires the ability to control the transfer of a message effectively in the time domain; thus, it is essential to combine QSDC with quantum memory to accomplish the communication task. In this Letter, we report the experimental demonstration of QSDC with state-of-the-art atomic quantum memory for the first time in principle. We use the polarization degrees of freedom of photons as the information carrier, and the fidelity of entanglement decoding is verified as approximately 90%. Our work completes a fundamental step toward practical QSDC and demonstrates a potential application for long-distance quantum communication in a quantum network.

Quantifying quantum coherence with quantum Fisher information.

PubMed

Feng, X N; Wei, L F

2017-11-14

Quantum coherence is one of the old but always important concepts in quantum mechanics, and now it has been regarded as a necessary resource for quantum information processing and quantum metrology. However, the question of how to quantify the quantum coherence has just been paid the attention recently (see, e.g., Baumgratz et al. PRL, 113. 140401 (2014)). In this paper we verify that the well-known quantum Fisher information (QFI) can be utilized to quantify the quantum coherence, as it satisfies the monotonicity under the typical incoherent operations and the convexity under the mixing of the quantum states. Differing from most of the pure axiomatic methods, quantifying quantum coherence by QFI could be experimentally testable, as the bound of the QFI is practically measurable. The validity of our proposal is specifically demonstrated with the typical phase-damping and depolarizing evolution processes of a generic single-qubit state, and also by comparing it with the other quantifying methods proposed previously.

Quantum Secure Direct Communication with Quantum Memory.

PubMed

Zhang, Wei; Ding, Dong-Sheng; Sheng, Yu-Bo; Zhou, Lan; Shi, Bao-Sen; Guo, Guang-Can

2017-06-02

Quantum communication provides an absolute security advantage, and it has been widely developed over the past 30 years. As an important branch of quantum communication, quantum secure direct communication (QSDC) promotes high security and instantaneousness in communication through directly transmitting messages over a quantum channel. The full implementation of a quantum protocol always requires the ability to control the transfer of a message effectively in the time domain; thus, it is essential to combine QSDC with quantum memory to accomplish the communication task. In this Letter, we report the experimental demonstration of QSDC with state-of-the-art atomic quantum memory for the first time in principle. We use the polarization degrees of freedom of photons as the information carrier, and the fidelity of entanglement decoding is verified as approximately 90%. Our work completes a fundamental step toward practical QSDC and demonstrates a potential application for long-distance quantum communication in a quantum network.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

Quantum capacity of quantum black holes

NASA Astrophysics Data System (ADS)

Adami, Chris; Bradler, Kamil

2014-03-01

The fate of quantum entanglement interacting with a black hole has been an enduring mystery, not the least because standard curved space field theory does not address the interaction of black holes with matter. We discuss an effective Hamiltonian of matter interacting with a black hole that has a precise analogue in quantum optics and correctly reproduces both spontaneous and stimulated Hawking radiation with grey-body factors. We calculate the quantum capacity of this channel in the limit of perfect absorption, as well as in the limit of a perfectly reflecting black hole (a white hole). We find that the white hole is an optimal quantum cloner, and is isomorphic to the Unruh channel with positive quantum capacity. The complementary channel (across the horizon) is entanglement-breaking with zero capacity, avoiding a violation of the quantum no-cloning theorem. The black hole channel on the contrary has vanishing capacity, while its complement has positive capacity instead. Thus, quantum states can be reconstructed faithfully behind the black hole horizon, but not outside. This work sheds new light on black hole complementarity because it shows that black holes can both reflect and absorb quantum states without violating the no-cloning theorem, and makes quantum firewalls obsolete.

Duality quantum algorithm efficiently simulates open quantum systems

PubMed Central

Wei, Shi-Jie; Ruan, Dong; Long, Gui-Lu

2016-01-01

Because of inevitable coupling with the environment, nearly all practical quantum systems are open system, where the evolution is not necessarily unitary. In this paper, we propose a duality quantum algorithm for simulating Hamiltonian evolution of an open quantum system. In contrast to unitary evolution in a usual quantum computer, the evolution operator in a duality quantum computer is a linear combination of unitary operators. In this duality quantum algorithm, the time evolution of the open quantum system is realized by using Kraus operators which is naturally implemented in duality quantum computer. This duality quantum algorithm has two distinct advantages compared to existing quantum simulation algorithms with unitary evolution operations. Firstly, the query complexity of the algorithm is O(d3) in contrast to O(d4) in existing unitary simulation algorithm, where d is the dimension of the open quantum system. Secondly, By using a truncated Taylor series of the evolution operators, this duality quantum algorithm provides an exponential improvement in precision compared with previous unitary simulation algorithm. PMID:27464855

Chiral Maxwell demon in a quantum Hall system with a localized impurity

NASA Astrophysics Data System (ADS)

Rosselló, Guillem; López, Rosa; Platero, Gloria

2017-08-01

We investigate the role of chirality on the performance of a Maxwell demon implemented in a quantum Hall bar with a localized impurity. Within a stochastic thermodynamics description, we investigate the ability of such a demon to drive a current against a bias. We show that the ability of the demon to perform is directly related to its ability to extract information from the system. The key features of the proposed Maxwell demon are the topological properties of the quantum Hall system. The asymmetry of the electronic interactions felt at the localized state when the magnetic field is reversed joined to the fact that we consider energy-dependent (and asymmetric) tunneling barriers that connect such state with the Hall edge modes allow the demon to properly work.

Interfacing External Quantum Devices to a Universal Quantum Computer

PubMed Central

Lagana, Antonio A.; Lohe, Max A.; von Smekal, Lorenz

2011-01-01

We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. PMID:22216276

Interfacing external quantum devices to a universal quantum computer.

PubMed

Lagana, Antonio A; Lohe, Max A; von Smekal, Lorenz

2011-01-01

We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. © 2011 Lagana et al.

Nearly Perfect Triplet-Triplet Energy Transfer from Wannier Excitons to Naphthalene in Organic-Inorganic Hybrid Quantum-Well Materials

NASA Astrophysics Data System (ADS)

Ema, K.; Inomata, M.; Kato, Y.; Kunugita, H.; Era, M.

2008-06-01

We report the observation of extremely efficient energy transfer (greater than 99%) in an organic-inorganic hybrid quantum-well structure consisting of perovskite-type lead bromide well layers and naphthalene-linked ammonium barrier layers. Time-resolved photoluminescence measurements confirm that the transfer is triplet-triplet Dexter-type energy transfer from Wannier excitons in the inorganic well to the triplet state of naphthalene molecules in the organic barrier. Using measurements in the 10 300 K temperature range, we also investigated the temperature dependence of the energy transfer.

Quantum Mechanics/Molecular Mechanics Study of the Sialyltransferase Reaction Mechanism.

PubMed

Hamada, Yojiro; Kanematsu, Yusuke; Tachikawa, Masanori

2016-10-11

The sialyltransferase is an enzyme that transfers the sialic acid moiety from cytidine 5'-monophospho-N-acetyl-neuraminic acid (CMP-NeuAc) to the terminal position of glycans. To elucidate the catalytic mechanism of sialyltransferase, we explored the potential energy surface along the sialic acid transfer reaction coordinates by the hybrid quantum mechanics/molecular mechanics method on the basis of the crystal structure of sialyltransferase CstII. Our calculation demonstrated that CstII employed an S N 1-like reaction mechanism via the formation of a short-lived oxocarbenium ion intermediate. The computational barrier height was 19.5 kcal/mol, which reasonably corresponded with the experimental reaction rate. We also found that two tyrosine residues (Tyr156 and Tyr162) played a vital role in stabilizing the intermediate and the transition states by quantum mechanical interaction with CMP.

QuVis interactive simulations: tools to support quantum mechanics instruction

NASA Astrophysics Data System (ADS)

Kohnle, Antje

2015-04-01

Quantum mechanics holds a fascination for many students, but its mathematical complexity and counterintuitive results can present major barriers. The QuVis Quantum Mechanics Visualization Project (www.st-andrews.ac.uk/physics/quvis) aims to overcome these issues through the development and evaluation of interactive simulations with accompanying activities for the learning and teaching of quantum mechanics. Over 90 simulations are now available on the QuVis website. One collection of simulations is embedded in the Institute of Physics Quantum Physics website (quantumphysics.iop.org), which consists of freely available resources for an introductory course in quantum mechanics starting from two-level systems. Simulations support model-building by reducing complexity, focusing on fundamental ideas and making the invisible visible. They promote engaged exploration, sense-making and linking of multiple representations, and include high levels of interactivity and direct feedback. Simulations are research-based and evaluation with students informs all stages of the development process. Simulations are iteratively refined using student feedback in individual observation sessions and in-class trials. Evaluation has shown that the simulations can help students learn quantum mechanics concepts at both the introductory and advanced undergraduate level and that students perceive simulations to be beneficial to their learning. Recent activity includes the launch of a new collection of HTML5 simulations that run on both desktop and tablet-based devices and the introduction of a goal and reward structure in simulations through the inclusion of challenges. This presentation will give an overview of the QuVis resources, highlight recent work and outline future plans. QuVis is supported by the UK Institute of Physics, the UK Higher Education Academy and the University of St Andrews.

Quantum algorithms for quantum field theories.

PubMed

Jordan, Stephen P; Lee, Keith S M; Preskill, John

2012-06-01

Quantum field theory reconciles quantum mechanics and special relativity, and plays a central role in many areas of physics. We developed a quantum algorithm to compute relativistic scattering probabilities in a massive quantum field theory with quartic self-interactions (φ(4) theory) in spacetime of four and fewer dimensions. Its run time is polynomial in the number of particles, their energy, and the desired precision, and applies at both weak and strong coupling. In the strong-coupling and high-precision regimes, our quantum algorithm achieves exponential speedup over the fastest known classical algorithm.

Abstract quantum computing machines and quantum computational logics

NASA Astrophysics Data System (ADS)

Chiara, Maria Luisa Dalla; Giuntini, Roberto; Sergioli, Giuseppe; Leporini, Roberto

2016-06-01

Classical and quantum parallelism are deeply different, although it is sometimes claimed that quantum Turing machines are nothing but special examples of classical probabilistic machines. We introduce the concepts of deterministic state machine, classical probabilistic state machine and quantum state machine. On this basis, we discuss the question: To what extent can quantum state machines be simulated by classical probabilistic state machines? Each state machine is devoted to a single task determined by its program. Real computers, however, behave differently, being able to solve different kinds of problems. This capacity can be modeled, in the quantum case, by the mathematical notion of abstract quantum computing machine, whose different programs determine different quantum state machines. The computations of abstract quantum computing machines can be linguistically described by the formulas of a particular form of quantum logic, termed quantum computational logic.

Piezoelectric Non-Linear Nanomechanical Temperature and Acceleration Insensitive Clocks (PENNTAC) Phase 1 Evaluation and Plans for Phase 2

DTIC Science & Technology

2013-05-01

95.2 dBc/Hz, (c) - 94.2 dBc/Hz. Fig. 4: Mechanically compensated AlN resonators. A thin oxide layer is used to completely cancel the linear...pumped is represented by a non-linear capacitor. This capacitor will be first implemented via a varactor and then substituted by a purely mechanical...demonstrate the advantages of a parametric oscillator: (i) we will first use an external electronic varactor to prove that a parametric oscillator

Quantum coherence and correlations in quantum system

PubMed Central

Xi, Zhengjun; Li, Yongming; Fan, Heng

2015-01-01

Criteria of measure quantifying quantum coherence, a unique property of quantum system, are proposed recently. In this paper, we first give an uncertainty-like expression relating the coherence and the entropy of quantum system. This finding allows us to discuss the relations between the entanglement and the coherence. Further, we discuss in detail the relations among the coherence, the discord and the deficit in the bipartite quantum system. We show that, the one-way quantum deficit is equal to the sum between quantum discord and the relative entropy of coherence of measured subsystem. PMID:26094795

Dissipative quantum computing with open quantum walks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinayskiy, Ilya; Petruccione, Francesco

An open quantum walk approach to the implementation of a dissipative quantum computing scheme is presented. The formalism is demonstrated for the example of an open quantum walk implementation of a 3 qubit quantum circuit consisting of 10 gates.

Quantum singularities in (2+1) dimensional matter coupled black hole spacetimes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unver, O.; Gurtug, O.

2010-10-15

Quantum singularities considered in the 3D Banados-Teitelboim-Zanelli (BTZ) spacetime by Pitelli and Letelier [Phys. Rev. D 77, 124030 (2008)] is extended to charged BTZ and 3D Einstein-Maxwell-dilaton gravity spacetimes. The occurrence of naked singularities in the Einstein-Maxwell extension of the BTZ spacetime both in linear and nonlinear electrodynamics as well as in the Einstein-Maxwell-dilaton gravity spacetimes are analyzed with the quantum test fields obeying the Klein-Gordon and Dirac equations. We show that with the inclusion of the matter fields, the conical geometry near r=0 is removed and restricted classes of solutions are admitted for the Klein-Gordon and Dirac equations. Hence,more » the classical central singularity at r=0 turns out to be quantum mechanically singular for quantum particles obeying the Klein-Gordon equation but nonsingular for fermions obeying the Dirac equation. Explicit calculations reveal that the occurrence of the timelike naked singularities in the considered spacetimes does not violate the cosmic censorship hypothesis as far as the Dirac fields are concerned. The role of horizons that clothes the singularity in the black hole cases is replaced by repulsive potential barrier against the propagation of Dirac fields.« less

Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well

NASA Astrophysics Data System (ADS)

Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy

2018-03-01

We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.

Quantum reflection in the linearly downward potential

NASA Astrophysics Data System (ADS)

Chamnan, N.; Krunavakarn, B.

2017-09-01

In this work, the motion of a particle in one dimension under the influence of the linearly downward potential well is studied within the context of the non-relativistic quantum mechanics. The attention is paid on the paradoxical phenomenon of the reflection of a particle that is in contrast between classical and quantum physics. Classically, the reflection effect occurs only at a potential barrier. To demonstrate such counter-intuitive phenomenon, the Schrödinger equation is solved to obtain the reflection coefficient in the scattering state by considering an incident particle that is represented by a monochromatic plane wave having an energy E > 0, propagates freely from left to right, pass through the potential well. The continuity conditions at boundaries give the desired result that is expressed in terms of the Airy functions which depends on the incident energy E, the strength jV 0 j and the range L of the well. The value of the reflection coefficient R lies in the interval 0 < R < 1, and its behavior is the decreasing function with respect to the range L.

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feix, F., E-mail: feix@pdi-berlin.de; Flissikowski, T.; Chèze, C.

2016-07-25

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission.more » We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.« less

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

NASA Astrophysics Data System (ADS)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodbridge, K.; Blood, P.; Fletcher, E.D.

1984-07-01

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

Electrical properties of graphene tunnel junctions with high-κ metal-oxide barriers

NASA Astrophysics Data System (ADS)

Feng, Ying; Trainer, Daniel J.; Chen, Ke

2017-04-01

An insulating barrier is one of the key components in electronic devices that makes use of quantum tunneling principles. Many metal-oxides have been used as a good barrier material in a tunnel junction for their large band gap, stable chemical properties and superb properties for forming a thin and pin-hole-free insulating layer. The reduced dimensions of transistors have led to the need for alternative, high dielectric constant (high-κ) oxides to replace conventional silicon-based dielectrics to reduce the leaking current induced by electron tunneling. On the other hand, a tunnel junction with one or both electrodes made of graphene may lead to novel applications due to the massless Dirac fermions from the graphene. Here we have fabricated sandwich-type graphene tunnel junctions with high-κ metal-oxides as barriers, including Al2O3, HfO2, ZrO2, and TiO2. Tunneling properties are investigated by observing the temperature and time dependences of the tunneling spectra. Our results show the potential for applications of high-κ oxides in graphene tunnel junctions and bringing new opportunities for memory and logic electronic devices.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1-xAs quantum well structures.

PubMed

Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M; Ergun, Yuksel

2012-11-12

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1-xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form.Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

Ab Initio Path Integral Molecular Dynamics Study of the Nuclear Quantum Effect on Out-of-Plane Ring Deformation of Hydrogen Maleate Anion.

PubMed

Kawashima, Yukio; Tachikawa, Masanori

2014-01-14

Ab initio path integral molecular dynamics (PIMD) simulation was performed to understand the nuclear quantum effect on the out-of-plane ring deformation of hydrogen maleate anion and investigate the existence of a stable structure with ring deformation, which was suggested in experimental observation (Fillaux et al., Chem. Phys. 1999, 120, 387-403). The isotope effect and the temperature effect are studied as well. We first investigated the nuclear quantum effect on the proton transfer. In static calculation and classical ab initio molecular dynamics simulations, the proton in the hydrogen bond is localized to either oxygen atom. On the other hand, the proton is located at the center of two oxygen atoms in quantum ab initio PIMD simulations. The nuclear quantum effect washes out the barrier of proton transfer. We next examined the nuclear quantum effect on the motion of hydrogen maleate anion. Principal component analysis revealed that the out-of-plane ring bending modes have dominant contribution to the entire molecular motion. In quantum ab initio PIMD simulations, structures with ring deformation were the global minimum for the deuterated isotope at 300 K. We analyzed the out-of-plane ring bending mode further and found that there are three minima along a ring distortion mode. We successfully found a stable structure with ring deformation of hydrogen maleate for the first time, to our knowledge, using theoretical calculation. The structures with ring deformation found in quantum simulation of the deuterated isotope allowed the proton transfer to occur more frequently than the planar structure. Static ab initio electronic structure calculation found that the structures with ring deformation have very small proton transfer barrier compared to the planar structure. We suggest that the "proton transfer driven" mechanism is the origin of stabilization for the structure with out-of-plane ring deformation.

QUANTUM: The Exhibition - quantum at the museum

NASA Astrophysics Data System (ADS)

Laforest, Martin; Olano, Angela; Day-Hamilton, Tobi

Distilling the essence of quantum phenomena, and how they are being harnessed to develop powerful quantum technologies, into a series of bite-sized, elementary-school-level pieces is what the scientific outreach team at the University of Waterloo's Institute for Quantum Computing was tasked with. QUANTUM: The Exhibition uses a series of informational panels, multimedia and interactive displays to introduce visitors to quantum phenomena and how they will revolutionize computing, information security and sensing. We'll discuss some of the approaches we took to convey the essence and impact of quantum mechanics and technologies to a lay audience while ensuring scientific accuracy.

Quantum thermodynamics of general quantum processes.

PubMed

Binder, Felix; Vinjanampathy, Sai; Modi, Kavan; Goold, John

2015-03-01

Accurately describing work extraction from a quantum system is a central objective for the extension of thermodynamics to individual quantum systems. The concepts of work and heat are surprisingly subtle when generalizations are made to arbitrary quantum states. We formulate an operational thermodynamics suitable for application to an open quantum system undergoing quantum evolution under a general quantum process by which we mean a completely positive and trace-preserving map. We derive an operational first law of thermodynamics for such processes and show consistency with the second law. We show that heat, from the first law, is positive when the input state of the map majorizes the output state. Moreover, the change in entropy is also positive for the same majorization condition. This makes a strong connection between the two operational laws of thermodynamics.

Quantum simulations with noisy quantum computers

NASA Astrophysics Data System (ADS)

Gambetta, Jay

Quantum computing is a new computational paradigm that is expected to lie beyond the standard model of computation. This implies a quantum computer can solve problems that can't be solved by a conventional computer with tractable overhead. To fully harness this power we need a universal fault-tolerant quantum computer. However the overhead in building such a machine is high and a full solution appears to be many years away. Nevertheless, we believe that we can build machines in the near term that cannot be emulated by a conventional computer. It is then interesting to ask what these can be used for. In this talk we will present our advances in simulating complex quantum systems with noisy quantum computers. We will show experimental implementations of this on some small quantum computers.

Quantum optics, cavity QED, and quantum optomechanics

NASA Astrophysics Data System (ADS)

Meystre, Pierre

2013-05-01

Quantum optomechanics provides a universal tool to achieve the quantum control of mechanical motion. It does that in devices spanning a vast range of parameters, with mechanical frequencies from a few Hertz to GHz, and with masses from 10-20 g to several kilos. Its underlying ideas can be traced back to the study of gravitational wave antennas, quantum optics, cavity QED and laser cooling which, when combined with the recent availability of advanced micromechanical and nanomechanical devices, opens a path to the realization of macroscopic mechanical systems that operate deep in the quantum regime. At the fundamental level this development paves the way to experiments that will lead to a more profound understanding of quantum mechanics; and from the point of view of applications, quantum optomechanical techniques will provide motion and force sensing near the fundamental limit imposed by quantum mechanics (quantum metrology) and significantly expand the toolbox of quantum information science. After a brief summary of key historical developments, the talk will give a broad overview of the current state of the art of quantum optomechanics, and comment on future prospects both in applied and in fundamental science. Work supported by NSF, ARO and the DARPA QuASAR and ORCHID programs.

Resonant Tunneling in Photonic Double Quantum Well Heterostructures.

PubMed

Cox, Joel D; Singh, Mahi R

2010-01-30

Here, we study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

Exploiting Locality in Quantum Computation for Quantum Chemistry.

PubMed

McClean, Jarrod R; Babbush, Ryan; Love, Peter J; Aspuru-Guzik, Alán

2014-12-18

Accurate prediction of chemical and material properties from first-principles quantum chemistry is a challenging task on traditional computers. Recent developments in quantum computation offer a route toward highly accurate solutions with polynomial cost; however, this solution still carries a large overhead. In this Perspective, we aim to bring together known results about the locality of physical interactions from quantum chemistry with ideas from quantum computation. We show that the utilization of spatial locality combined with the Bravyi-Kitaev transformation offers an improvement in the scaling of known quantum algorithms for quantum chemistry and provides numerical examples to help illustrate this point. We combine these developments to improve the outlook for the future of quantum chemistry on quantum computers.

Opportunistic quantum network coding based on quantum teleportation

NASA Astrophysics Data System (ADS)

Shang, Tao; Du, Gang; Liu, Jian-wei

2016-04-01

It seems impossible to endow opportunistic characteristic to quantum network on the basis that quantum channel cannot be overheard without disturbance. In this paper, we propose an opportunistic quantum network coding scheme by taking full advantage of channel characteristic of quantum teleportation. Concretely, it utilizes quantum channel for secure transmission of quantum states and can detect eavesdroppers by means of quantum channel verification. What is more, it utilizes classical channel for both opportunistic listening to neighbor states and opportunistic coding by broadcasting measurement outcome. Analysis results show that our scheme can reduce the times of transmissions over classical channels for relay nodes and can effectively defend against classical passive attack and quantum active attack.

Quantum stochastic calculus associated with quadratic quantum noises

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Un Cig, E-mail: uncigji@chungbuk.ac.kr; Sinha, Kalyan B., E-mail: kbs-jaya@yahoo.co.in

2016-02-15

We first study a class of fundamental quantum stochastic processes induced by the generators of a six dimensional non-solvable Lie †-algebra consisting of all linear combinations of the generalized Gross Laplacian and its adjoint, annihilation operator, creation operator, conservation, and time, and then we study the quantum stochastic integrals associated with the class of fundamental quantum stochastic processes, and the quantum Itô formula is revisited. The existence and uniqueness of solution of a quantum stochastic differential equation is proved. The unitarity conditions of solutions of quantum stochastic differential equations associated with the fundamental processes are examined. The quantum stochastic calculusmore » extends the Hudson-Parthasarathy quantum stochastic calculus.« less

Some foundational aspects of quantum computers and quantum robots.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benioff, P.; Physics

1998-01-01

This paper addresses foundational issues related to quantum computing. The need for a universally valid theory such as quantum mechanics to describe to some extent its own validation is noted. This includes quantum mechanical descriptions of systems that do theoretical calculations (i.e. quantum computers) and systems that perform experiments. Quantum robots interacting with an environment are a small first step in this direction. Quantum robots are described here as mobile quantum systems with on-board quantum computers that interact with environments. Included are discussions on the carrying out of tasks and the division of tasks into computation and action phases. Specificmore » models based on quantum Turing machines are described. Differences and similarities between quantum robots plus environments and quantum computers are discussed.« less

Ubiquity of quantum zero-point fluctuations in dislocation glide

NASA Astrophysics Data System (ADS)

Landeiro Dos Reis, Marie; Choudhury, Anshuman; Proville, Laurent

2017-03-01

Modeling the dislocation glide through atomic scale simulations in Al, Cu, and Ni and in solid solution alloys Al(Mg) and Cu(Ag), we show that in the course of the plastic deformation the variation of the crystal zero-point energy (ZPE) and the dislocation potential energy barriers are of opposite sign. The multiplicity of situations where we have observed the same trend allows us to conclude that quantum fluctuations, giving rise to the crystal ZPE, make easier the dislocation glide in most materials, even those constituted of atoms heavier than H and He.

Single-server blind quantum computation with quantum circuit model

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property

NASA Astrophysics Data System (ADS)

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

2018-02-01

InGaAs/GaAsP strain-compensated multiple quantum wells were prepared by metal organic chemical vapor deposition on GaAs (100) substrates with misorientation of 15° toward [111]. In order to obtain better strain-compensated abrupt heterojunction interfaces, the compressive strain and relaxation of different quantum well and the total accumulated strain were investigated by adjusting In composition and the thickness of InxGa1-xAs well and GaAs1-yPy barrier keep constant. High resolution X-ray diffraction results indicate the crystal and interfacial structures of In0.18Ga0.82As (7 nm)/GaAs1-yPy with the least relaxation and total strain mismatch are better than others. From in-situ surface reflectivity curves, we observed the slope of reflectivity curve of multiple quantum wells increases with increasing lattice relaxation. Atomic force microscopic results show surface morphologies of three samples are Volmer-Weber mode. Indium segregation at heterointerface between well and barrier were investigated by secondary ion mass spectrometry which indicate indium diffusion width increase with the increasing total strain mismatch. Finally, a shoulder peak was observed from Gaussian fitting of photoluminescence, stemming from the lattice relaxation. These results demonstrate that the relaxation process is introduced and indium segregation length widens as the relaxation increases. The experimental results will be favorable for optimizing the epitaxial growth of InGaAs/GaAsP strain-compensated quantum wells in order to obtain high quality smooth heterointerface.

Competing quantum effects in the free energy profiles and diffusion rates of hydrogen and deuterium molecules through clathrate hydrates.

PubMed

Cendagorta, Joseph R; Powers, Anna; Hele, Timothy J H; Marsalek, Ondrej; Bačić, Zlatko; Tuckerman, Mark E

2016-11-30

Clathrate hydrates hold considerable promise as safe and economical materials for hydrogen storage. Here we present a quantum mechanical study of H 2 and D 2 diffusion through a hexagonal face shared by two large cages of clathrate hydrates over a wide range of temperatures. Path integral molecular dynamics simulations are used to compute the free-energy profiles for the diffusion of H 2 and D 2 as a function of temperature. Ring polymer molecular dynamics rate theory, incorporating both exact quantum statistics and approximate quantum dynamical effects, is utilized in the calculations of the H 2 and D 2 diffusion rates in a broad temperature interval. We find that the shape of the quantum free-energy profiles and their height relative to the classical free energy barriers at a given temperature, as well as the rate of diffusion, are strongly affected by competing quantum effects: above 25 K, zero-point energy (ZPE) perpendicular to the reaction path for diffusion between cavities decreases the quantum rate compared to the classical rate, whereas at lower temperatures tunneling outcompetes the ZPE and as a result the quantum rate is greater than the classical rate.

Quantum chemistry simulation on quantum computers: theories and experiments.

PubMed

Lu, Dawei; Xu, Boruo; Xu, Nanyang; Li, Zhaokai; Chen, Hongwei; Peng, Xinhua; Xu, Ruixue; Du, Jiangfeng

2012-07-14

It has been claimed that quantum computers can mimic quantum systems efficiently in the polynomial scale. Traditionally, those simulations are carried out numerically on classical computers, which are inevitably confronted with the exponential growth of required resources, with the increasing size of quantum systems. Quantum computers avoid this problem, and thus provide a possible solution for large quantum systems. In this paper, we first discuss the ideas of quantum simulation, the background of quantum simulators, their categories, and the development in both theories and experiments. We then present a brief introduction to quantum chemistry evaluated via classical computers followed by typical procedures of quantum simulation towards quantum chemistry. Reviewed are not only theoretical proposals but also proof-of-principle experimental implementations, via a small quantum computer, which include the evaluation of the static molecular eigenenergy and the simulation of chemical reaction dynamics. Although the experimental development is still behind the theory, we give prospects and suggestions for future experiments. We anticipate that in the near future quantum simulation will become a powerful tool for quantum chemistry over classical computations.

Quantum logic using correlated one-dimensional quantum walks

NASA Astrophysics Data System (ADS)

Lahini, Yoav; Steinbrecher, Gregory R.; Bookatz, Adam D.; Englund, Dirk

2018-01-01

Quantum Walks are unitary processes describing the evolution of an initially localized wavefunction on a lattice potential. The complexity of the dynamics increases significantly when several indistinguishable quantum walkers propagate on the same lattice simultaneously, as these develop non-trivial spatial correlations that depend on the particle's quantum statistics, mutual interactions, initial positions, and the lattice potential. We show that even in the simplest case of a quantum walk on a one dimensional graph, these correlations can be shaped to yield a complete set of compact quantum logic operations. We provide detailed recipes for implementing quantum logic on one-dimensional quantum walks in two general cases. For non-interacting bosons—such as photons in waveguide lattices—we find high-fidelity probabilistic quantum gates that could be integrated into linear optics quantum computation schemes. For interacting quantum-walkers on a one-dimensional lattice—a situation that has recently been demonstrated using ultra-cold atoms—we find deterministic logic operations that are universal for quantum information processing. The suggested implementation requires minimal resources and a level of control that is within reach using recently demonstrated techniques. Further work is required to address error-correction.

Resonant electronic excitation energy transfer by exchange mechanism in the quantum dot system

NASA Astrophysics Data System (ADS)

Chikalova-Luzina, O. P.; Samosvat, D. M.; Vyatkin, V. M.; Zegrya, G. G.

2017-11-01

A microscopic theory of nonradiative resonance energy transfer between spherical A3B5 semiconductor quantum dots by the exchange mechanism is suggested. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same A3B5 compound and are embedded in the matrix of another material that produces potential barriers for electrons and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found in the frame of the Kane model that provides the most adequate description of the real spectra of A3B5 semiconductors. The analytical treatment is carried out with using the density matrix method, which enabled us to perform an energy transfer analysis both in the weak-interaction approximation and in the strong-interaction approximation. The numerical calculations showed the saturation of the energy transfer rate at the distances between the donor and the acceptor approaching the contact one. The contributions of the exchange and direct Coulomb intractions can be of the same order at the small distances and can have the same value in the saturation range.

Long distance quantum communication with quantum Reed-Solomon codes

NASA Astrophysics Data System (ADS)

Muralidharan, Sreraman; Zou, Chang-Ling; Li, Linshu; Jiang, Liang; Jianggroup Team

We study the construction of quantum Reed Solomon codes from classical Reed Solomon codes and show that they achieve the capacity of quantum erasure channel for multi-level quantum systems. We extend the application of quantum Reed Solomon codes to long distance quantum communication, investigate the local resource overhead needed for the functioning of one-way quantum repeaters with these codes, and numerically identify the parameter regime where these codes perform better than the known quantum polynomial codes and quantum parity codes . Finally, we discuss the implementation of these codes into time-bin photonic states of qubits and qudits respectively, and optimize the performance for one-way quantum repeaters.

Reliable quantum communication over a quantum relay channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gyongyosi, Laszlo, E-mail: gyongyosi@hit.bme.hu; Imre, Sandor

2014-12-04

We show that reliable quantum communication over an unreliable quantum relay channels is possible. The coding scheme combines the results on the superadditivity of quantum channels and the efficient quantum coding approaches.

The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puthen-Veettil, B., E-mail: b.puthen-veettil@unsw.edu.au; Patterson, R.; König, D.

Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in amore » peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.« less

Novel systems and methods for quantum communication, quantum computation, and quantum simulation

NASA Astrophysics Data System (ADS)

Gorshkov, Alexey Vyacheslavovich

Precise control over quantum systems can enable the realization of fascinating applications such as powerful computers, secure communication devices, and simulators that can elucidate the physics of complex condensed matter systems. However, the fragility of quantum effects makes it very difficult to harness the power of quantum mechanics. In this thesis, we present novel systems and tools for gaining fundamental insights into the complex quantum world and for bringing practical applications of quantum mechanics closer to reality. We first optimize and show equivalence between a wide range of techniques for storage of photons in atomic ensembles. We describe experiments demonstrating the potential of our optimization algorithms for quantum communication and computation applications. Next, we combine the technique of photon storage with strong atom-atom interactions to propose a robust protocol for implementing the two-qubit photonic phase gate, which is an important ingredient in many quantum computation and communication tasks. In contrast to photon storage, many quantum computation and simulation applications require individual addressing of closely-spaced atoms, ions, quantum dots, or solid state defects. To meet this requirement, we propose a method for coherent optical far-field manipulation of quantum systems with a resolution that is not limited by the wavelength of radiation. While alkali atoms are currently the system of choice for photon storage and many other applications, we develop new methods for quantum information processing and quantum simulation with ultracold alkaline-earth atoms in optical lattices. We show how multiple qubits can be encoded in individual alkaline-earth atoms and harnessed for quantum computing and precision measurements applications. We also demonstrate that alkaline-earth atoms can be used to simulate highly symmetric systems exhibiting spin-orbital interactions and capable of providing valuable insights into strongly

Imagery, intuition and imagination in quantum physics education

NASA Astrophysics Data System (ADS)

Stapleton, Andrew J.

2018-03-01

In response to the authors, I demonstrate how threshold concepts offer a means to both contextualise teaching and learning of quantum physics and help transform students into the culture of physics, and as a way to identify particularly troublesome concepts within quantum physics. By drawing parallels from my own doctoral research in another area of contemporary physics—special relativity—I highlight concepts that require an ontological change, namely a shift beyond the reality of everyday Newtonian experience such as time dilation and length contraction, as being troublesome concepts that can present barriers to learning with students often asking "is it real?". Similarly, the domain of quantum physics requires students to move beyond "common sense" perception as it brings into sharp focus the difference between what is experienced via the sense perceptions and the mental abstraction of phenomena. And it's this issue that highlights the important role imagery and creativity have both in quantum physics and in the evolution of physics more generally, and lies in stark contrast to the apparent mathematical focus and lack of opportunity for students to explore ontological issues evident in the authors' research. By reflecting on the authors' observations of a focus on mathematical formalisms and problem solving at the expense of alternative approaches, I explore the dialectic between Heisenberg's highly mathematical approach and Schrödinger's mechanical wave view of the atom, together with its conceptual imagery, at the heart of the evolution of quantum mechanics. In turn, I highlight the significance of imagery, imagination and intuition in quantum physics, together with the importance of adopting an epistemological pluralism—multiple ways of knowing and thinking—in physics education. Again drawing parallels with the authors' work and my own, I identify the role thought experiments have in both quantum physics education and in physics more generally. By

Quantum chemical ab initio prediction of proton exchange barriers between CH{sub 4} and different H-zeolites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuma, Christian; Sauer, Joachim, E-mail: js@chemie.hu-berlin.de

2015-09-14

A hybrid MP2:DFT (second-order Møller–Plesset perturbation theory–density functional theory) method that combines MP2 calculations for cluster models with DFT calculations for the full periodic structure is used to localize minima and transition structures for proton jumps at different Brønsted sites in different frameworks (chabazite, faujasite, ferrierite, and ZSM-5) and at different crystallographic positions of a given framework. The MP2 limit for the periodic structures is obtained by extrapolating the results of a series of cluster models of increasing size. A coupled-cluster (CCSD(T)) correction to MP2 energies is calculated for cluster models consisting of three tetrahedra. For the adsorption energies, thismore » difference is small, between 0.1 and 0.9 kJ/mol, but for the intrinsic proton exchange barriers, this difference makes a significant (10.85 ± 0.25 kJ/mol) and almost constant contribution across different systems. The total values of the adsorption energies vary between 22 and 34 kJ/mol, whereas the total proton exchange energy barriers fall in the narrow range of 152–156 kJ/mol. After adding nuclear motion contributions (harmonic approximation, 298 K), intrinsic enthalpy barriers between 134 and 141 kJ/mol and apparent energy barriers between 105 and 118 kJ/mol are predicted for the different sites examined for the different frameworks. These predictions are consistent with experimental results available for faujasite, ferrierite, and ZSM-5.« less

Beable-guided quantum theories: Generalizing quantum probability laws

NASA Astrophysics Data System (ADS)

Kent, Adrian

2013-02-01

Beable-guided quantum theories (BGQT) are generalizations of quantum theory, inspired by Bell's concept of beables. They modify the quantum probabilities for some specified set of fundamental events, histories, or other elements of quasiclassical reality by probability laws that depend on the realized configuration of beables. For example, they may define an additional probability weight factor for a beable configuration, independent of the quantum dynamics. Beable-guided quantum theories can be fitted to observational data to provide foils against which to compare explanations based on standard quantum theory. For example, a BGQT could, in principle, characterize the effects attributed to dark energy or dark matter, or any other deviation from the predictions of standard quantum dynamics, without introducing extra fields or a cosmological constant. The complexity of the beable-guided theory would then parametrize how far we are from a standard quantum explanation. Less conservatively, we give reasons for taking suitably simple beable-guided quantum theories as serious phenomenological theories in their own right. Among these are the possibility that cosmological models defined by BGQT might in fact fit the empirical data better than any standard quantum explanation, and the fact that BGQT suggest potentially interesting nonstandard ways of coupling quantum matter to gravity.

Another Look at the Mechanisms of Hydride Transfer Enzymes with Quantum and Classical Transition Path Sampling.

PubMed

Dzierlenga, Michael W; Antoniou, Dimitri; Schwartz, Steven D

2015-04-02

The mechanisms involved in enzymatic hydride transfer have been studied for years, but questions remain due, in part, to the difficulty of probing the effects of protein motion and hydrogen tunneling. In this study, we use transition path sampling (TPS) with normal mode centroid molecular dynamics (CMD) to calculate the barrier to hydride transfer in yeast alcohol dehydrogenase (YADH) and human heart lactate dehydrogenase (LDH). Calculation of the work applied to the hydride allowed for observation of the change in barrier height upon inclusion of quantum dynamics. Similar calculations were performed using deuterium as the transferring particle in order to approximate kinetic isotope effects (KIEs). The change in barrier height in YADH is indicative of a zero-point energy (ZPE) contribution and is evidence that catalysis occurs via a protein compression that mediates a near-barrierless hydride transfer. Calculation of the KIE using the difference in barrier height between the hydride and deuteride agreed well with experimental results.

Rethinking barriers: a novel conceptualization of exercise barriers in cancer survivors.

PubMed

Lee, Morgan S; Small, Brent J; Jacobsen, Paul B

2017-12-01

Previous research suggests different types of barriers may demonstrate different relationships with intention to engage in health behaviors. This study explored global, practical, and health-related barriers' relationships with exercise intention and behavior among cancer survivors. The mediating role of intention in the barriers-behavior relationships was also evaluated. Cancer survivors (N = 152) completed self-report measures of exercise barriers, intention, and behavior at baseline and of exercise behavior two months later. Global barriers were negatively related (p < .01) and practical and health-related barriers were unrelated (ps ≥ .07) to exercise intention. Global and practical barriers were negatively related (ps < .01) and health-related barriers were unrelated (p = .48) to subsequent exercise behavior. Exercise intention did not mediate any barriers-behavior relationships. Results suggest that global and practical barriers should be targeted in barriers reduction interventions and highlight the intention-behavior gap problem. Future research should explore multidimensionality of barriers for other health behaviors.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1−xAs quantum well structures

PubMed Central

2012-01-01

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1−xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes’ third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature. PMID:23146126

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1- x As quantum well structures

NASA Astrophysics Data System (ADS)

Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M.; Ergun, Yuksel

2012-11-01

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga1- x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

Degenerate quantum codes and the quantum Hamming bound

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarvepalli, Pradeep; Klappenecker, Andreas

2010-03-15

The parameters of a nondegenerate quantum code must obey the Hamming bound. An important open problem in quantum coding theory is whether the parameters of a degenerate quantum code can violate this bound for nondegenerate quantum codes. In this article we show that Calderbank-Shor-Steane (CSS) codes, over a prime power alphabet q{>=}5, cannot beat the quantum Hamming bound. We prove a quantum version of the Griesmer bound for the CSS codes, which allows us to strengthen the Rains' bound that an [[n,k,d

Preparation of freezing quantum state for quantum coherence

NASA Astrophysics Data System (ADS)

Yang, Lian-Wu; Man, Zhong-Xiao; Zhang, Ying-Jie; Han, Feng; Du, Shao-jiang; Xia, Yun-Jie

2018-06-01

We provide a method to prepare the freezing quantum state for quantum coherence via unitary operations. The initial product state consists of the control qubit and target qubit; when it satisfies certain conditions, the initial product state converts into the particular Bell diagonal state under the unitary operations, which have the property of freezing of quantum coherence under quantum channels. We calculate the frozen quantum coherence and corresponding quantum correlations, and find that the quantities are determined by the control qubit only when the freezing phenomena occur.

Exploring the origin of the internal rotational barrier for molecules with one rotatable dihedral angle

PubMed Central

Liu, Shubin; Govind, Niranjan; Pedersen, Lee G.

2008-01-01

Continuing our recent endeavor, we systematically investigate in this work the origin of internal rotational barriers for small molecules using the new energy partition scheme proposed recently by one of the authors [S. B. Liu, J. Chem. Phys. 126, 244103 (2007)], where the total electronic energy is decomposed into three independent components, steric, electrostatic, and fermionic quantum. Specifically, we focus in this work on six carbon, nitrogen, and oxygen containing hydrides, CH3CH3, CH3NH2, CH3OH, NH2NH2, NH2OH, and H2O2, with only one rotatable dihedral angle ∠H–X–Y–H (X,Y=C,N,O). The relative contributions of the different energy components to the total energy difference as a function of the internal dihedral rotation will be considered. Both optimized-geometry (adiabatic) and fixed-geometry (vertical) differences are examined, as are the results from the conventional energy partition and natural bond orbital analysis. A wealth of strong linear relationships among the total energy difference and energy component differences for different systems have been observed but no universal relationship applicable to all systems for both cases has been discovered, indicating that even for simple systems such as these, there exists no omnipresent, unique interpretation on the nature and origin of the internal rotation barrier. Different energy components can be employed for different systems in the rationalization of the barrier height. Confirming that the two differences, adiabatic and vertical, are disparate in nature, we find that for the vertical case there is a unique linear relationship applicable to all the six molecules between the total energy difference and the sum of the kinetic and electrostatic energy differences. For the adiabatic case, it is the total potential energy difference that has been found to correlate well with the total energy difference except for ethane whose rotation barrier is dominated by the quantum effect. PMID:19044862

Quantum dot quantum cascade infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning

2014-04-28

We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirpedmore » superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.« less