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Sample records for quantum dots grown

  1. InAsP quantum dot lasers grown by MOVPE.

    PubMed

    Karomi, Ivan; Smowton, Peter M; Shutts, Samuel; Krysa, Andrey B; Beanland, Richard

    2015-10-19

    We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

  2. Quantum Dots

    NASA Astrophysics Data System (ADS)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  3. Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

    SciTech Connect

    Sergent, S.; Kako, S.; Bürger, M.; Schupp, T.; As, D. J.; Arakawa, Y.

    2014-10-06

    We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.

  4. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  5. Electron localization in self-assembled Si quantum dots grown on Ge(111)

    NASA Astrophysics Data System (ADS)

    Stepina, N. P.; Zinovieva, A. F.; Zinovyev, V. A.; Deryabin, A. S.; Kulik, L. V.; Dvurechenskii, A. V.

    2015-12-01

    Electron localization in a Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with a g-factor g=2.0022+/- 0.0001 and ESR line width {{Δ }}H≈ 1.2 Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained taking into account the energy band modification due to both strain and quantum confinement. The transport behavior confirms the efficient electron localization in QDs for a Si/Ge(111) system. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be the main reason for an unobserved ESR signal from the QDs.

  6. Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy.

    PubMed

    Linares-García, Gabriel; Meza-Montes, Lilia; Stinaff, Eric; Alsolamy, S M; Ware, M E; Mazur, Y I; Wang, Z M; Lee, Jihoon; Salamo, G J

    2016-12-01

    Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k · p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.

  7. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

    PubMed

    Jiang, Qi; Tang, Mingchu; Chen, Siming; Wu, Jiang; Seeds, Alwyn; Liu, Huiyun

    2014-09-22

    We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

  8. Strain Relief Analysis of InN Quantum Dots Grown on GaN

    PubMed Central

    2007-01-01

    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. PMID:21794190

  9. Surface studies of gallium nitride quantum dots grown using droplet epitaxy on bulk, native substrates

    NASA Astrophysics Data System (ADS)

    Jones, Christina; Jeon, Sunyeol; Goldman, Rachel; Yacoby, Yizhak; Clarke, Roy

    Gallium nitride (GaN) and its applications in light-emitting diodes play an integral part in efficient, solid-state lighting, as evidenced by its recognition in the 2014 Nobel prize in physics. In order to push this technology towards higher efficiency and reliability and lower cost, we must understand device growth on bulk GaN substrates, which have lower defect densities and strain than template GaN substrates grown on sapphire. In this work, we present our findings on the surface properties of GaN quantum dots (QDs) grown on commercial bulk GaN. QDs are grown using the droplet epitaxy method and analyzed using a surface X-ray diffraction technique called Coherent Bragg Rod Analysis (COBRA), which uses phase retrieval to reconstruct atomic positions near the substrate surface. While several QD growth conditions in our study produce dense QDs, COBRA reveals that only low nitridation temperatures result in GaN QDs that are coherent with the bulk GaN substrate. Results are supported with atomic force microscopy and high-resolution transmission electron microscopy.

  10. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    SciTech Connect

    Soto Rodriguez, Paul E. D. Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph; Nötzel, Richard

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  11. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.

    2015-06-01

    We have studied the material properties and device performance of InAs/GaAs quantum dot solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (S-K), quasi-monolayer (QML), and sub-monolayer (SML) growth modes. All QDSCs show an extended external quantum efficiency (EQE) at near infrared wavelengths of 950–1070 nm from the QD absorption. Compared to the S-K and SML QDSCs, the QML QDSC with a higher strain exhibits a poor EQE response in the wavelength region of 300–880 nm due to increased non-radiative recombination. The conversion efficiency of the S-K and SML QDSCs exceeds that of the reference cell (13.4%) without QDs due to an enhanced photocurrent (>16% increase) produced by the silicon doped QD stacks. However, as expected from the EQE of the QML QDSC, the increase of strain-induced crystalline defects greatly degrades the photocurrent and open-circuit voltage, leading to the lowest conversion efficiency (8.9%)

  12. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  13. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  14. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  15. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

    PubMed

    Wang, Ting; Liu, Huiyun; Lee, Andrew; Pozzi, Francesca; Seeds, Alwyn

    2011-06-01

    We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

  16. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Gacevic, Z.; Kehagias, Th.; Koukoula, T.; Komninou, Ph.

    2011-05-15

    We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities ({approx}10{sup 10} cm{sup -3}). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

  17. Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

    SciTech Connect

    Zhou, D.; Sharma, G.; Fimland, B. O.; Vullum, P. E.; Thomassen, S. F.; Holmestad, R.; Reenaas, T. W.

    2010-02-22

    We report current-voltage and spectral response characteristics of high density InAs/GaAs quantum dot (QD) solar cells with different positions where dots are located. The short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), and external quantum efficiency of these cells under air mass 1.5 are presented and compared with a GaAs reference cell. An extended photoresponse in contrast to the GaAs reference cell was confirmed for all these cells. The effect of inserting QD layers into emitter and base region on device performance is shown. The J{sub sc} is reduced, while the V{sub oc} is maintained. The cell with QDs located toward the base side shows better performance, confirmed by both current-voltage and spectral response measurements.

  18. Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

    SciTech Connect

    Zhou, D.; Sharma, G.; Fimland, B. O.; Thomassen, S. F.; Reenaas, T. W.

    2010-02-08

    We report high density quantum dots (QDs) formation with optimized growth temperature and V/III ratio. At lower growth temperature, QD density is increased, due to smaller surface migration length of In adatoms. With higher V/III, the QD density is higher but it results in large clusters formation and decreases the QD uniformity. The QD solar cell was fabricated and examined. An extended spectral response in contrast to the GaAs reference cell was presented but the external quantum efficiency at energies higher than GaAs band gap is reduced, resulting from the degradation for the emitter above the strained QD layers.

  19. Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates.

    PubMed

    Martín-Sánchez, J; Muñoz-Matutano, G; Herranz, J; Canet-Ferrer, J; Alén, B; González, Y; Alonso-González, P; Fuster, D; González, L; Martínez-Pastor, J; Briones, F

    2009-06-23

    We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

  20. 1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates

    SciTech Connect

    Seravalli, L.; Frigeri, P.; Trevisi, G.; Franchi, S.

    2008-05-26

    We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 {mu}m and, therefore, is a viable method to achieve efficient emission in the 1.55 {mu}m window and beyond from quantum dots grown on GaAs substrates.

  1. Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

    PubMed

    Wu, B P; Wu, D H; Xiong, Y H; Huang, S S; Ni, H Q; Xu, Y Q; Niu, Z C

    2009-02-01

    In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 microm as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

  2. Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

    SciTech Connect

    Sengupta, S.; Halder, N.; Chakrabarti, S.

    2010-11-15

    We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 {sup o}C.

  3. Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

    SciTech Connect

    Schmidbauer, M.; Wang, Zh. M.; Mazur, Yu. I.; Lytvyn, P. M.; Salamo, G. J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2007-08-27

    The self-organized formation of In{sub 0.40}Ga{sub 0.60}As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In{sub 0.40}Ga{sub 0.60}As dots shows weak quantum dot alignment and a corresponding elongated shape along [011], while the top layer of a multilayered In{sub 0.40}Ga{sub 0.60}As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [011]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

  4. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.

    PubMed

    Wu, Jiang; Ramsay, Andrew; Sanchez, Ana; Zhang, Yunyan; Kim, Dongyoung; Brossard, Frederic; Hu, Xian; Benamara, Mourad; Ware, Morgan E; Mazur, Yuriy I; Salamo, Gregory J; Aagesen, Martin; Wang, Zhiming; Liu, Huiyun

    2016-01-13

    The III-V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III-V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III-V NWQDs by a bottom-up approach, that is, growth by the vapor-liquid-solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III-V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III-V quantum information and photonic devices on silicon platform.

  5. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.

    PubMed

    Wu, Jiang; Ramsay, Andrew; Sanchez, Ana; Zhang, Yunyan; Kim, Dongyoung; Brossard, Frederic; Hu, Xian; Benamara, Mourad; Ware, Morgan E; Mazur, Yuriy I; Salamo, Gregory J; Aagesen, Martin; Wang, Zhiming; Liu, Huiyun

    2016-01-13

    The III-V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III-V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III-V NWQDs by a bottom-up approach, that is, growth by the vapor-liquid-solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III-V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III-V quantum information and photonic devices on silicon platform. PMID:26666697

  6. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  7. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  8. Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Roßbach, R.; Schulz, W.-M.; Reischle, M.; Beirne, G. J.; Jetter, M.; Michler, P.

    2008-11-01

    InP/GaInP quantum dots emitting in the red spectral range have been grown on an AlGaAs distributed Bragg reflector in order to increase the single-photon emission efficiency. We have observed an increase in ensemble photoluminescence by a factor of 28 in comparison to the reference InP/GaInP quantum dots grown without such a reflector underneath. Photon correlation measurements performed under pulsed excitation show a clear antibunching behavior ( g(0)=0.17) as expected for a single-photon emitter. Using aluminum containing barriers to surround the quantum dots the ensemble luminescence intensity could be increased by a factor of 500 at 240 K in comparison to the reference sample at 240 K.

  9. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  10. Colloidal Double Quantum Dots

    PubMed Central

    2016-01-01

    Conspectus Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole–dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single

  11. Substrate temperature dependent surface morphology and photoluminescence of germanium quantum dots grown by radio frequency magnetron sputtering.

    PubMed

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, Sib Krishna; Dousti, Mohammad Reza; Kadir, Mohammed Rafiq Abdul

    2012-10-09

    The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeO(x) manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices.

  12. 1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy.

    PubMed

    Wu, Cheng-Han; Chen, Hsuan-An; Lin, Shih-Yen; Wu, Chao-Hsin

    2015-08-15

    In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a 100  μm×100  μm emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at λ of 1100 nm.

  13. Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

    NASA Astrophysics Data System (ADS)

    Wan, Yating; Li, Qiang; Liu, Alan Y.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May

    2016-07-01

    Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.

  14. Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

    SciTech Connect

    Talochkin, A. B. Shklyaev, A. A.; Mashanov, V. I.

    2014-04-14

    Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6 nm and they form arrays with the super-high density of (5–8) × 10{sup 12} cm{sup −2} at 1–2 nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.

  15. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

    SciTech Connect

    Smagina, Zh. V.; Stepina, N. P. Zinovyev, V. A.; Kuchinskaya, P. A.; Novikov, P. L.; Dvurechenskii, A. V.

    2014-10-13

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and ridges were obtained. The shape and depth of the relief were governed by ion energy and by the number of etching stages as well. Laterally ordered chains of Ge quantum dots were fabricated by molecular beam epitaxy of Ge on the pre-patterned Si substrates. For small amount of Ge deposited chains contain separate quantum dot molecules. The increase of deposition amount leads to overlapping of quantum dot molecules with formation of dense homogeneous chains of quantum dots. It was shown that the residual irradiation-induced bulk defects underneath the grooves suppress nucleation of Ge islands at the bottom of grooves. On pre-patterned substrates with whole defect regions, etched quantum dots grow at the bottom of grooves. The observed location of Ge quantum dots is interpreted in terms of local strain-mediated surface chemical potential which controls the sites of islands nucleation. The local chemical potential is affected by additional strain formed by the residual defects. It was shown by molecular dynamics calculations that these defects form the compressive strain at the bottom of grooves.

  16. Vertical asymmetric double quantum dots

    NASA Astrophysics Data System (ADS)

    Roßbach, R.; Reischle, M.; Beirne, G. J.; Schweizer, H.; Jetter, M.; Michler, P.

    2007-01-01

    Two layers of differently sized self-assembled InP-quantum dots (QDs) separated by a GaInP spacer layer with varying thickness were grown by metal organic vapor phase epitaxy (MOVPE). Photoluminescence measurements of the QD ensembles and of individual asymmetric double QDS show coupling due to the tunnelling of carriers.

  17. Quantum Dots: Theory

    SciTech Connect

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  18. High-density InAs/GaAs1-xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

    NASA Astrophysics Data System (ADS)

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Cheng, Y.; Whiteside, V. R.; Sellers, I. R.; Hossain, K.; Laghumavarapu, R. B.; Liang, B. L.; Huffaker, D. L.

    2016-03-01

    InAs quantum-dot structures were grown using a GaAs1-xSbx matrix on a GaAs(001) substrate. The use of GaAs1-xSbx for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (˜3.5 × 1011/cm2) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13-14% in the GaAs1-xSbx matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (˜90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

  19. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  20. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

    PubMed

    Lee, Andrew; Jiang, Qi; Tang, Mingchu; Seeds, Alwyn; Liu, Huiyun

    2012-09-24

    We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

  1. (In,Mn)As multilayer quantum dot structures

    SciTech Connect

    Bouravleuv, Alexei; Sapega, Victor; Nevedomskii, Vladimir; Khrebtov, Artem; Samsonenko, Yuriy; Cirlin, George

    2014-12-08

    (In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

  2. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    NASA Astrophysics Data System (ADS)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  3. Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rajesh, Mohan; Nishioka, Masao; Arakawa, Yasuhiko

    2016-10-01

    We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). High-density coalescence-free InAs/Sb:GaAs QDs emitting at 1.3 µm were obtained on a GaAs/Ge/Si wafer. The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. Together, these results are promising for the realization of a QD laser on a Si substrate by MOCVD for silicon photonics application.

  4. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

    PubMed Central

    2012-01-01

    We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. PMID:22277096

  5. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

  6. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    SciTech Connect

    Shimomura, K. Kamiya, I.

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  7. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.

    PubMed

    Orchard, Jonathan R; Shutts, Samuel; Sobiesierski, Angela; Wu, Jiang; Tang, Mingchu; Chen, Siming; Jiang, Qi; Elliott, Stella; Beanland, Richard; Liu, Huiyun; Smowton, Peter M; Mowbray, David J

    2016-03-21

    The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance. This is shown to result from an increased efficacy of the dislocation filter layers (DFLs); reducing the density of dislocations that arise at the Si/III-V interface which reach the active region. The addition of two annealing steps gives a greater than three reduction in the room temperature threshold current of a 1.3 μm emitting QD laser on Si. The active region of structures grown on Si have a room temperature residual tensile strain of 0.17%, consistent with cool down from the growth temperature and the different Si and GaAs thermal expansion coefficients. This strain limits the amount of III-V material that can be grown before relaxation occurs. PMID:27136813

  8. Synthesis of a CdSe-graphene hybrid composed of CdSe quantum dot arrays directly grown on CVD-graphene and its ultrafast carrier dynamics

    NASA Astrophysics Data System (ADS)

    Kim, Yong-Tae; Shin, Hee-Won; Ko, Young-Seon; Ahn, Tae Kyu; Kwon, Young-Uk

    2013-01-01

    We report the original fabrication and performance of a photocurrent device that uses directly grown CdSe quantum dots (QDs) on a graphene basal plane. The direct junction between the QDs and graphene and the high quality of the graphene grown by chemical vapor deposition enables highly efficient electron transfer from the QDs to the graphene. Therefore, the hybrids show large photocurrent effects with a fast response time and shortened photoluminescence (PL) lifetime. The PL lifetime quenching can be explained as being due to the efficient electron transfer as evidenced by femtosecond transient absorption spectroscopy. These hybrids are expected to find applications in flexible electronics and optoelectronic devices.We report the original fabrication and performance of a photocurrent device that uses directly grown CdSe quantum dots (QDs) on a graphene basal plane. The direct junction between the QDs and graphene and the high quality of the graphene grown by chemical vapor deposition enables highly efficient electron transfer from the QDs to the graphene. Therefore, the hybrids show large photocurrent effects with a fast response time and shortened photoluminescence (PL) lifetime. The PL lifetime quenching can be explained as being due to the efficient electron transfer as evidenced by femtosecond transient absorption spectroscopy. These hybrids are expected to find applications in flexible electronics and optoelectronic devices. Electronic supplementary information (ESI) available: TEM data of MSTF, AFM data of T-QD-G samples, PL decay fitting results to the multiexponential decay equation, photoconductivity data of T-QD-2LG with two different illumination wavelengths, photocurrent efficiencies of QD-G hybrids prepared in various ways, photoconductivity and photoresponse data of T-QD-2LG and T-QD-3LG, and the bending stress on a PET film. See DOI: 10.1039/c2nr33294a

  9. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    SciTech Connect

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P.; Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S.; Biswas, D.

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  10. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.

    PubMed

    Kuyanov, P; LaPierre, R R

    2015-08-01

    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  11. Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (n11)

    SciTech Connect

    Lytvyn, P. M.; Strelchuk, V. V.; Kolomys, O. F.; Prokopenko, I. V.; Valakh, M. Ya.; Mazur, Yu. I.; Wang, Zh. M.; Salamo, G. J.; Hanke, M.

    2007-10-22

    We have investigated lateral self-assembling in In{sub 0.4}Ga{sub 0.6}As/GaAs quantum dot (QD) multilayers, which were grown by molecular beam epitaxy on GaAs(100) and (n11)B substrates with n=9,8,7,5,4,3. The lateral self-assembling and the QD size distribution have been studied by atomic force microscopy depending on substrate orientation and the number of periods within the multilayers. The observed two-dimensional ordering can be described by a centered rectangular surface unit cell. Derived autocorrelation functions exhibit the most pronounced lateral QD assembling along the elastically soft directions [1n0]. This can be attributed to elastic interaction, the particular elastic anisotropy of the high index substrates, and the minimization of the strain energy.

  12. Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Gao, Feng; Luo, Shuai; Ji, Hai-Ming; Liu, Song-Tao; Lu, Dan; Ji, Chen; Yang, Tao

    2016-07-01

    We report on ultra-short pulse single-section mode-locked lasers emitting at 1.55 μm, based on self-assembled InAs/InGaAsP/InP quantum dot active regions grown by metal-organic vapor phase epitaxy (MOVPE). For a 1.5-mm-long Fabry-Perot laser, mode-locking at a repetition rate of 29.8 GHz with pulse duration of 855 fs is obtained without any external pulse compression techniques. The mode-beating exhibits a narrow RF linewidth less than 30 kHz, and a wide frequency tuning range up to 73 MHz can be achieved by simply changing the injection current. Moreover, a higher repetition rate of 55.6 GHz and the transform limited Gaussian-pulse with the 707 fs pulse duration are achieved from a device with a shorter cavity length of 0.8 mm.

  13. PREFACE: Quantum Dot 2010

    NASA Astrophysics Data System (ADS)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  14. Single-dot optical emission from ultralow density well-isolated InP quantum dots

    SciTech Connect

    Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.

    2008-10-06

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.

  15. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

    PubMed

    Guimard, Denis; Ishida, Mitsuru; Bordel, Damien; Li, Lin; Nishioka, Masao; Tanaka, Yu; Ekawa, Mitsuru; Sudo, Hisao; Yamamoto, Tsuyoshi; Kondo, Hayato; Sugawara, Mitsuru; Arakawa, Yasuhiko

    2010-03-12

    We investigated the effects of post-growth annealing on the photoluminescence (PL) characteristics of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD). The onset temperature at which both the peak linewidth and the PL intensity degraded and the blueshift of the ground state emission wavelength occurred was found to depend on both the QD density and the In composition of the capping layer. This behavior is particularly important in view of QD integration in photonic devices. From the knowledge of the dependences of the PL characteristics after annealing on the QD and capping growth conditions, ground state lasing at 1.30 microm could be demonstrated from InAs/GaAs QDs grown by MOCVD. Finally, we compared the laser characteristics of InAs/GaAs QDs with those of InAs/Sb:GaAs QDs, grown according to the antimony-mediated growth technique, and showed that InAs/Sb:GaAs QDs are more appropriate for laser fabrication at 1.3 microm by MOCVD.

  16. Quantum Dots as Cellular Probes

    SciTech Connect

    Alivisatos, A. Paul; Gu, Weiwei; Larabell, Carolyn

    2004-09-16

    Robust and bright light emitters, semiconductor nanocrystals[quantum dots (QDs)] have been adopted as a new class of fluorescent labels. Six years after the first experiments of their uses in biological applications, there have been dramatic improvements in understanding surface chemistry, biocompatibility, and targeting specificity. Many studies have shown the great potential of using quantum dots as new probes in vitro and in vivo. This review summarizes the recent advances of quantum dot usage at the cellular level, including immunolabeling, cell tracking, in situ hybridization, FRET, in vivo imaging, and other related technologies. Limitations and potential future uses of quantum dot probes are also discussed.

  17. Self-assembly drives quantum dot photoluminescence.

    PubMed

    Plain, J; Sonnefraud, Y; Viste, P; Lérondel, G; Huant, S; Royer, P

    2009-03-01

    Engineering the spectral properties of quantum dots can be achieved by a control of the quantum dots organization on a substrate. Indeed, many applications of quantum dots as LEDs are based on the realization of a 3D architecture of quantum dots. In this contribution, we present a systematic study of the quantum dot organization obtained on different chemically modified substrates. By varying the chemical affinity between the quantum dots and the substrate, the quantum dot organization is strongly modified from the 2D monolayer to the 3D aggregates. Then the photoluminescence of the different obtained samples has been systematically studied and correlated with the quantum dot film organization. We clearly show that the interaction between the substrate and the quantum dot must be stronger than the quantum dot-quantum dot interaction to avoid 3D aggregation and that these organization strongly modified the photoluminescence of the film rather than intrinsic changes of the quantum dot induced by pure surface chemistry.

  18. Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

    SciTech Connect

    Paul, Matthias Kettler, Jan; Zeuner, Katharina; Clausen, Caterina; Jetter, Michael; Michler, Peter

    2015-03-23

    By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

  19. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

    PubMed

    Wan, Yating; Li, Qiang; Liu, Alan Y; Gossard, Arthur C; Bowers, John E; Hu, Evelyn L; Lau, Kei May

    2016-04-01

    Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut. The lasing threshold is as low as hundreds of microwatts, similar to the thresholds of identical lasers grown on a GaAs substrate. The heteroepitaxial structure employed here does not require the use of an absorptive germanium buffer and/or dislocation filter layers, both of which impede the efficient coupling of light from the laser active regions to silicon waveguides. This allows for full compatibility with the extensive silicon-on-insulator (SOI) technology. The large-area virtual GaAs (on Si) substrates can be directly adopted in various mature in-plane laser configurations, both optically and electrically. Thus, this demonstration represents a major advancement toward the commercial success of fully integrated silicon photonics. PMID:27192313

  20. Quantum dot cascade laser

    PubMed Central

    2014-01-01

    We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation. PACS 42.55.Px; 78.55.Cr; 78.67.Hc PMID:24666965

  1. Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

    SciTech Connect

    Seravalli, L.; Trevisi, G.; Frigeri, P.; Rivas, D.; Munoz-Matutano, G.; Suarez, I.; Alen, B.; Canet, J.; Martinez-Pastor, J. P.

    2011-04-25

    We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

  2. Polarization anisotropic luminescence of tunable single lateral quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Hermannstädter, C.; Witzany, M.; Heldmaier, M.; Hafenbrak, R.; Jöns, K. D.; Beirne, G. J.; Michler, P.

    2012-03-01

    We investigate the photoluminescence polarization anisotropy of self-assembled individual lateral InGaAs/GaAs quantum dot molecules. In contrast to similarly grown single quantum dots, the dot molecules exhibit a remarkable degree of linear polarization, which remains almost unchanged when a lateral electric field is applied to tune the exciton wave function and, thus, the luminescence spectral properties. We discuss the nature of this polarization anisotropy and suggest possible causes based on the system's symmetry and heterostructure alloy composition.

  3. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  4. Quantum dots: Rethinking the electronics

    NASA Astrophysics Data System (ADS)

    Bishnoi, Dimple

    2016-05-01

    In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including "waste heat" from the sun's energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

  5. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    SciTech Connect

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-12-04

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

  6. Three-dimensional Si/Ge quantum dot crystals.

    PubMed

    Grützmacher, Detlev; Fromherz, Thomas; Dais, Christian; Stangl, Julian; Müller, Elisabeth; Ekinci, Yasin; Solak, Harun H; Sigg, Hans; Lechner, Rainer T; Wintersberger, Eugen; Birner, Stefan; Holý, Vaclav; Bauer, Günther

    2007-10-01

    Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered

  7. Quantum Dots in Cell Biology

    PubMed Central

    Barroso, Margarida M.

    2011-01-01

    Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated transport. PMID:21378278

  8. Gallium arsenide-based long-wavelength quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Park, Gyoungwon

    2001-09-01

    GaAs-based long-wavelength quantum dot lasers have long been studied for applications to optical interconnects. The zero-dimensional confinement potential of quantum dots opens possibility of novel devices. Also, the quantum dot itself shows very interesting characteristics. This dissertation describes the development of GaAs-based 1.3 μm quantum dot lasers and the research on the unique characteristics of quantum dot ensemble. InGaAs quantum dots grown using molecular beam epitaxy in submonolayer deposition have extended wavelength around 1.3 μm and well resolved energy levels that can be described by three-dimensional harmonic oscillator model assuming parabolic confining potential. Lasing transitions from various InGaAs quantum dot energy levels are obtained from edge-emitting lasers. With optimized quantum dot active region and device structure, continuous-wave, room-temperature lasing operation around 1.3 μm is achieved with very low threshold current. Lateral confinement of carriers and photons in the cavity with AlxO y using wet-oxidation technique results in low waveguide loss, which lowers the threshold further. InGaAs quantum dot lasers have almost temperature- insensitive lasing threshold below ~200 K with very low threshold current density close to transparency current density. The rapid increase of threshold current along with temperature above ~200 K is due to thermal excitation of carriers into the higher energy levels and increase of non-radiative recombination. Quasi- equilibrium model for carrier dynamics shows that the optical gain of quantum dot ensemble is strongly temperature dependent, and that the separation between quantum dot energy levels plays an important role in the temperature dependence of the device characteristics. Several predictions of the model are compared with the experimental results. Lasing operation with less temperature-sensitivity is achieved from InAs quantum dot lasers with increased level separation.

  9. Lateral Quantum Dots for Quantum Information Processing

    NASA Astrophysics Data System (ADS)

    House, Matthew Gregory

    The possibility of building a computer that takes advantage of the most subtle nature of quantum physics has been driving a lot of research in atomic and solid state physics for some time. It is still not clear what physical system or systems can be used for this purpose. One possibility that has been attracting significant attention from researchers is to use the spin state of an electron confined in a semiconductor quantum dot. The electron spin is magnetic in nature, so it naturally is well isolated from electrical fluctuations that can a loss of quantum coherence. It can also be manipulated electrically, by taking advantage of the exchange interaction. In this work we describe several experiments we have done to study the electron spin properties of lateral quantum dots. We have developed lateral quantum dot devices based on the silicon metal-oxide-semiconductor transistor, and studied the physics of electrons confined in these quantum dots. We measured the electron spin excited state lifetime, which was found to be as long as 30 ms at the lowest magnetic fields that we could measure. We fabricated and characterized a silicon double quantum dot. Using this double quantum dot design, we fabricated devices which combined a silicon double quantum dot with a superconducting microwave resonator. The microwave resonator was found to be sensitive to two-dimensional electrons in the transistor channel, which we measured and characterized. We developed a new method for extracting information from random telegraph signals, which are produced when we observe thermal fluctuations of electrons in quantum dots. The new statistical method, based on the hidden Markov model, allows us to detect spin-dependent effects in such fluctuations even though we are not able to directly observe the electron spin. We use this analysis technique on data from two experiments involving gallium arsenide quantum dots and use it to measure spin-dependent tunneling rates. Our results advance the

  10. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

    SciTech Connect

    Dupuy, E.; Regreny, P.; Robach, Y.; Gendry, M.; Chauvin, N.; Tranvouez, E.; Bremond, G.; Bru-Chevallier, C.; Patriarche, G.

    2006-09-18

    The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.

  11. Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate

    NASA Astrophysics Data System (ADS)

    Tanoto, H.; Yoon, S. F.; Lew, K. L.; Loke, W. K.; Dohrman, C.; Fitzgerald, E. A.; Tang, L. J.

    2009-10-01

    We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs/In0.1Ga0.9As quantum dot (QD) structures grown on graded Si1-xGex/Si substrate. The QD was found to take on a lens shaped structure with aspect ratio of 0.23±0.05. Room-temperature electroluminescence at 1.29 μm was observed from the QD structures. The external quantum efficiency as function of injected current was investigated and the dominant carrier recombination processes were identified from analysis of the current-optical power relationship.

  12. Submonolayer Quantum Dot Infrared Photodetector

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  13. Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

    SciTech Connect

    Fuster, David; Rivera, Antonio; Alen, Benito; Alonso-Gonzalez, Pablo; Gonzalez, Yolanda; Gonzalez, Luisa

    2009-03-30

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4x2){r_reversible}(2x4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4x2) surface during the In deposition step and their subsequent crystallization under the As step.

  14. A Nanowire-Based Plasmonic Quantum Dot Laser.

    PubMed

    Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-13

    Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics. PMID:27030886

  15. A Nanowire-Based Plasmonic Quantum Dot Laser.

    PubMed

    Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-13

    Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

  16. Wavelength extension beyond 1.5 µm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy

    NASA Astrophysics Data System (ADS)

    Ha, Neul; Mano, Takaaki; Wu, Yu-Nien; Ou, Ya-Wen; Cheng, Shun-Jen; Sakuma, Yoshiki; Sakoda, Kazuaki; Kuroda, Takashi

    2016-10-01

    By using a C 3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 µm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.

  17. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    SciTech Connect

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P. Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava; Kundu, Souvik

    2015-01-05

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

  18. Mesoscopic cavity quantum electrodynamics with quantum dots

    SciTech Connect

    Childress, L.; Soerensen, A.S.; Lukin, M.D.

    2004-04-01

    We describe an electrodynamic mechanism for coherent, quantum-mechanical coupling between spatially separated quantum dots on a microchip. The technique is based on capacitive interactions between the electron charge and a superconducting transmission line resonator, and is closely related to atomic cavity quantum electrodynamics. We investigate several potential applications of this technique which have varying degrees of complexity. In particular, we demonstrate that this mechanism allows design and investigation of an on-chip double-dot microscopic maser. Moreover, the interaction may be extended to couple spatially separated electron-spin states while only virtually populating fast-decaying superpositions of charge states. This represents an effective, controllable long-range interaction, which may facilitate implementation of quantum information processing with electron-spin qubits and potentially allow coupling to other quantum systems such as atomic or superconducting qubits.

  19. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Maksudur Rahman, Mohammad; Higo, Akio; Sekhar, Halubai; Erman Syazwan, Mohd; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji

    2016-03-01

    The effect of passivation films on a Si quantum dot superlattice (QDSL) was investigated to generate high photocurrent in solar-cell applications. Three types of passivation films, sputter-grown amorphous silicon carbide (a-SiC), hydrogenated a-SiC (a-SiC:H), and atomic-layer-deposited aluminum oxide (ALD-Al2O3), were used to passivate the Si QDSLs containing a stack of four 4 nm Si nanodisks (NDs) and 2 nm silicon carbide (SiC) films fabricated by neutral beam etching (NBE). Because of the high surface-to-volume ratio typically present in quantum Si-NDs formed in the top-down NBE process, there is a tendency to form larger surface dangling bonds on untreated Si-ND surfaces as well as to have short distance (<10 nm) between high-aspect-ratio nanopillars of stacked 4 nm Si-NDs/2 nm SiC films, which conventionally sputter SiC films cannot uniformly cover. Therefore, we optimized the passivation techniques with an ALD-Al2O3 film. Scanning electron microscopy (SEM) analysis helped to explain the surface morphology before and after the passivation of the QDSLs. After the completion of the passivation process, the quality of the top surface films of the QDSLs was analyzed from the surface roughness by atomic force microscopy (AFM) analysis, which revealed that ALD-Al2O3 passivated films had the smallest roughness (RMS) of 1.09 nm with respect to sputter-grown a-SiC (RMS: 1.75 nm) and a-SiC:H (RMS: 1.54 nm) films. Conductive atomic force microscopy (CAFM) revealed that ALD-Al2O3 passivation decreased the surface-leakage current as a result of proper passivation of side-wall surface defects in the QDSLs. The carrier transport characteristics were extracted from the QDSLs using the photovoltaic (PV) properties of p++/i/n+ solar cells, where the QDSLs consisted of different passivation layers acting as intermediate layers (i-layers) between the high-doping-density p++ Si (1 × 1020 cm-3) and n+ Si (1 × 1019 cm-3) substrates. High-doping-density p++ Si acted as a hole

  20. Nanoscale and Single-Dot Patterning of Colloidal Quantum Dots.

    PubMed

    Xie, Weiqiang; Gomes, Raquel; Aubert, Tangi; Bisschop, Suzanne; Zhu, Yunpeng; Hens, Zeger; Brainis, Edouard; Van Thourhout, Dries

    2015-11-11

    Using an optimized lift-off process we develop a technique for both nanoscale and single-dot patterning of colloidal quantum dot films, demonstrating feature sizes down to ~30 nm for uniform films and a yield of 40% for single-dot positioning, which is in good agreement with a newly developed theoretical model. While first of all presenting a unique tool for studying physics of single quantum dots, the process also provides a pathway toward practical quantum dot-based optoelectronic devices.

  1. Quantum Dots for Molecular Pathology

    PubMed Central

    True, Lawrence D.; Gao, Xiaohu

    2007-01-01

    Assessing malignant tumors for expression of multiple biomarkers provides data that are critical for patient management. Quantum dot-conjugated probes to specific biomarkers are powerful tools that can be applied in a multiplex manner to single tissue sections of biopsies to measure expression levels of multiple biomarkers. PMID:17251330

  2. Optical Fiber Sensing Using Quantum Dots

    PubMed Central

    Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz

    2007-01-01

    Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms.

  3. Luminescence in semimagnetic Pb1-xMnxSe quantum dots grown in a glass host: Radiative and nonradiative emission processes

    NASA Astrophysics Data System (ADS)

    Silva, R. S.; Baffa, Oswaldo; Chen, Felipe; Lourenço, S. A.; Dantas, N. O.

    2013-04-01

    We report on the radiative and nonradiative emission processes from semimagnetic Pb1-xMnxSe quantum dots (QDs) embedded in a glass matrix. Emissions between the 4T1 → 6A1 states of Mn2+ ions located in the PbSe semiconductor gap were not observed. Electron Paramagnetic Resonance spectra confirmed that Mn2+ ions are located in two distinct QD sites. Furthermore, Magnetic Force Microscopy confirmed the formation of high quality Pb1-xMnxSe QDs with uniformly distributed magnetic moments.

  4. Brightness-equalized quantum dots

    PubMed Central

    Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.

    2015-01-01

    As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices. PMID:26437175

  5. Designing quantum dots for solotronics

    PubMed Central

    Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

    2014-01-01

    Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946

  6. Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

    SciTech Connect

    Saucer, Timothy W.; Lee, J. E.; Martin, Andrew J.; Tien, Deborah; Millunchick, Joanna M.; Sih, Vanessa

    2010-12-22

    We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.

  7. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

    PubMed

    Tang, Mingchu; Chen, Siming; Wu, Jiang; Jiang, Qi; Dorogan, Vitaliy G; Benamara, Mourad; Mazur, Yuriy I; Salamo, Gregory J; Seeds, Alwyn; Liu, Huiyun

    2014-05-19

    We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

  8. Composition control and localization of S2- in CdSSe quantum dots grown from Li4[Cd10Se4(SPh)16].

    PubMed

    Lovingood, Derek D; Oyler, Ryan E; Strouse, Geoffrey F

    2008-12-17

    The development of ternary nanoscale materials with controlled cross-sectional doping is an important step for the use of chemically prepared quantum dots for nanoscale engineering applications. We report cross-sectional, elemental doping with the formation of an alloyed CdSSe nanocrystal from the thermal decomposition of Li(4)[Cd(10)Se(4)(SPh)(16)]. The sulfur incorporation arises from surface-mediated phenylthiolate degradation on the growing quantum dot surface. In the alloy, we identify a pure CdSe nucleus of approximately 1.5 nm, consistent with the predictions of nucleation theory. As the particle grows, S(2-) incorporation increases until the CdSSe reaches approximately 4 nm, where a marked reduction in phenylthiolate content on the nanocrystal is observed by CP-MAS NMR spectroscopy, implying that rapid decomposition of the phenylthiolate arises with subsequent enhanced S(2-) incorporation at the level of the stoichiometry of the reaction (namely approximately 60%). The use of molecular clusters to allow controlled defect ion incorporation can open new pathways to more complex nanomaterials.

  9. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

    PubMed Central

    2011-01-01

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

  10. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

    SciTech Connect

    Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.; Ghosh, Arindam; Birajadar, Ravikiran B.; Ghule, Anil V.; Sharma, Ramphal

    2012-11-15

    Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

  11. Thermoelectric energy harvesting with quantum dots.

    PubMed

    Sothmann, Björn; Sánchez, Rafael; Jordan, Andrew N

    2015-01-21

    We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics.

  12. Height control of self-assembled quantum dots by strain engineering during capping

    SciTech Connect

    Grossi, D. F. Koenraad, P. M.; Smereka, P.; Keizer, J. G.; Ulloa, J. M.

    2014-10-06

    Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs quantum dots grown by molecular beam epitaxy. We studied InAs quantum dots that are capped by In{sub x}Ga{sub (1−x)}As layers of different indium compositions. Both from our realistic 3D kinetic Monte Carlo simulations and the X-STM measurements on real samples, a trend in the height of the capped quantum dot is found as a function of the lattice mismatch between the quantum dot material and the capping layer. Results obtained on additional material combinations show a generic role of the elastic energy in the control of the quantum dot morphology by strain engineering during capping.

  13. Quantum Dot Light Emitting Diode

    SciTech Connect

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  14. Quantum Dot Light Emitting Diode

    SciTech Connect

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  15. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

    SciTech Connect

    Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

    2014-02-14

    A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped.

  16. Quantum dot enabled high color gamut LCDs

    NASA Astrophysics Data System (ADS)

    Chen, Jian; Kan, Shihai; Lee, Ernie; Gensler, Steve; Hartlove, Jason

    2015-03-01

    Quantum dots are a new generation of phosphor material that have high photon conversion efficiency, narrow spectral line-widths and can be continuously tuned in their emission wavelengths. Since 2013, quantum dots have been adopted by the consumer electronics industry into LCDs to significantly increase their color performance. Compared to the OLED solution, quantum dot LCDs have higher energy efficiency, larger color gamut, longer lifetime, and are offered at a fraction of the cost of OLED panels. In this paper, we demonstrate that quantum-dot based LCDs can achieve more than 90% coverage of the ultra-wide color gamut, Rec. 2020, which is the new color standard for UHDTV.

  17. Chiral quantum dot based materials

    NASA Astrophysics Data System (ADS)

    Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii

    2014-05-01

    Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.

  18. Annealing-induced change in quantum dot chain formation mechanism

    NASA Astrophysics Data System (ADS)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-01

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  19. Annealing-induced change in quantum dot chain formation mechanism

    SciTech Connect

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-15

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  20. Photoluminescence of a quantum-dot molecule

    SciTech Connect

    Kruchinin, Stanislav Yu.; Rukhlenko, Ivan D.; Baimuratov, Anvar S.; Leonov, Mikhail Yu.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.

    2015-01-07

    The coherent coupling of quantum dots is a sensitive indicator of the energy and phase relaxation processes taking place in the nanostructure components. We formulate a theory of low-temperature, stationary photoluminescence from a quantum-dot molecule composed of two spherical quantum dots whose electronic subsystems are resonantly coupled via the Coulomb interaction. We show that the coupling leads to the hybridization of the first excited states of the quantum dots, manifesting itself as a pair of photoluminescence peaks with intensities and spectral positions strongly dependent on the geometric, material, and relaxation parameters of the quantum-dot molecule. These parameters are explicitly contained in the analytical expression for the photoluminescence differential cross section derived in the paper. The developed theory and expression obtained are essential in interpreting and analyzing spectroscopic data on the secondary emission of coherently coupled quantum systems.

  1. Multi-million atom electronic structure calculations for quantum dots

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in the field of nanoscience. The new and tunable optical and electrical properties of these artificial atoms have been proposed in a variety of different fields, for example in communication and computing systems, medical and quantum computing applications. Predictive and quantitative modeling and simulation of these structures can help to narrow down the vast design space to a range that is experimentally affordable and move this part of nanoscience to nano-Technology. Modeling of such quantum dots pose a formidable challenge to theoretical physicists because: (1) Strain originating from the lattice mismatch of the materials penetrates deep inside the buffer surrounding the quantum dots and require large scale (multi-million atom) simulations to correctly capture its effect on the electronic structure, (2) The interface roughness, the alloy randomness, and the atomistic granularity require the calculation of electronic structure at the atomistic scale. Most of the current or past theoretical calculations are based on continuum approach such as effective mass approximation or k.p modeling capturing either no or one of the above mentioned effects, thus missing some of the essential physics. The Objectives of this thesis are: (1) to model and simulate the experimental quantum dot topologies at the atomistic scale; (2) to theoretically explore the essential physics i.e. long range strain, linear and quadratic piezoelectricity, interband optical transition strengths, quantum confined

  2. Structural analysis of site-controlled InAs/InP quantum dots

    NASA Astrophysics Data System (ADS)

    Fain, B.; Elvira, D.; Le Gratiet, L.; Largeau, L.; Beaudoin, G.; Troadec, D.; Abram, I.; Beveratos, A.; Robert-Philip, I.; Patriarche, G.; Sagnes, I.

    2011-11-01

    We present atomic-scale characterization of site-controlled InAs/InP(001) quantum dots grown by metal-organic chemical vapor deposition using nano-area selective area growth. We have developed for this purpose a process combining e-beam lithography, inductively coupled-plasma etching and focused ion beam etching to isolate a few quantum dots. The size, the shape and the composition of the quantum dots are investigated by Scanning Transmission Electron Microscopy. A comparison with the well-known single self-assembled quantum dots highlights the specificities of our growth mode compared to the Stranski-Krastanov growth mode.

  3. Charge state hysteresis in semiconductor quantum dots

    SciTech Connect

    Yang, C. H.; Rossi, A. Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.

    2014-11-03

    Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

  4. A quantum dot in topological insulator nanofilm.

    PubMed

    Herath, Thakshila M; Hewageegana, Prabath; Apalkov, Vadym

    2014-03-19

    We introduce a quantum dot in topological insulator nanofilm as a bump at the surface of the nanofilm. Such a quantum dot can localize an electron if the size of the dot is large enough, ≳5 nm. The quantum dot in topological insulator nanofilm has states of two types, which belong to two ('conduction' and 'valence') bands of the topological insulator nanofilm. We study the energy spectra of such defined quantum dots. We also consider intraband and interband optical transitions within the dot. The optical transitions of the two types have the same selection rules. While the interband absorption spectra have multi-peak structure, each of the intraband spectra has one strong peak and a few weak high frequency satellites.

  5. STED nanoscopy with fluorescent quantum dots

    PubMed Central

    Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.

    2015-01-01

    The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ∼50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging. PMID:25980788

  6. STED nanoscopy with fluorescent quantum dots

    NASA Astrophysics Data System (ADS)

    Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.

    2015-05-01

    The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ~50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.

  7. Thick-shell nanocrystal quantum dots

    DOEpatents

    Hollingsworth, Jennifer A.; Chen, Yongfen; Klimov, Victor I.; Htoon, Han; Vela, Javier

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  8. STED nanoscopy with fluorescent quantum dots.

    PubMed

    Hanne, Janina; Falk, Henning J; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J; Hell, Stefan W

    2015-05-18

    The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ∼ 50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.

  9. Electron charging in epitaxial germanium quantum dots on silicon (100)

    NASA Astrophysics Data System (ADS)

    Ketharanathan, Sutharsan

    The electron charging behavior of self assembled epitaxial Ge quantum dots on Si(100) grown using molecular beam epitaxy has been studied. Ge quantum dots encapsulated in n-type Si matrix were incorporated into Schottky diodes to investigate their charging behavior using capacitance-voltage measurements. These experimental results were interpreted in the context of theoretical models to assess the degree of charge localization to the dot. Experiments involving Ge quantum dot growth, growth of Sb-doped Si and morphological evolution during encapsulation of the Ge dots during Si overgrowth were performed in order to optimize the conditions for obtaining distinct Ge quantum dot morphologies. This investigation included finding a suitable method to minimize Sb segregation while maintaining good dot epitaxy and overall crystal quality. Holes are confined to the Ge dots for which the valence band offsets are large (˜650 meV). Electrons are confined to the strained Si regions adjacent to the Ge quantum dots which have relatively smaller confinement potentials (˜100--150 meV). Experimentally, it was found that but and pyramid clusters in the range from 20--40 nm in diameter confine ˜1electron per dot while dome clusters in the range from 60--80 nm diameter confine ˜6--8 electrons per dot. Theoretical simulations predict that similar pyramid structures confine ˜0.4 electrons per dot and dome structures confine ˜2.2--3 electrons per dot. Even though the theory and the experimental results disagree due to various uncertainties and approximations, the ratio between theory and experiment agree remarkably well for both island types. We also investigated constructive three-dimensional nanolithography. Nanoscale Au rich dots and pure Ge dots were deposited on SiO2 and Si3N4 substrates by decomposing adsorbed precursors using a focused electron beam in an environmental transmission electron microscope. Dimethyl acetylacetonate gold was used for Au and digermane was used to

  10. Biocompatible Quantum Dots for Biological Applications

    SciTech Connect

    Rosenthal, Sandra; Chang, Jerry; Kovtun, Oleg; McBride, James; Tomlinson, Ian

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.

  11. Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells

    SciTech Connect

    Tutu, F. K.; Wu, J.; Lam, P.; Tang, M.; Liu, H.; Miyashita, N.; Okada, Y.; Wilson, J.; Allison, R.

    2013-07-22

    We report enhanced solar cell performance using high-density InAs quantum dots. The high-density quantum dot was grown by antimony mediated molecular beam epitaxy. In-plane quantum dot density over 1 × 10{sup 11} cm{sup −2} was achieved by applying a few monolayers of antimony on the GaAs surface prior to quantum dot growth. The formation of defective large clusters was reduced by optimization of the growth temperature and InAs coverage. Comparing with a standard quantum dot solar cell without the incorporation of antimony, the high-density quantum dot solar cell demonstrates a distinct improvement in short-circuit current from 7.4 mA/cm{sup 2} to 8.3 mA/cm{sup 2}.

  12. Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

    SciTech Connect

    Halder, Nripendra N.; Biswas, Pranab; Nagabhushan, B.; Banerji, P.; Kundu, Souvik; Biswas, D.

    2014-05-28

    Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180–300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2 V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively.

  13. Single bump, two-color quantum dot camera

    NASA Astrophysics Data System (ADS)

    Varley, E.; Lenz, M.; Lee, S. J.; Brown, J. S.; Ramirez, D. A.; Stintz, A.; Krishna, S.; Reisinger, Axel; Sundaram, Mani

    2007-08-01

    The authors report a two-color, colocated quantum dot based imaging system used to take multicolor images using a single focal plane array (FPA). The dots-in-a-well (DWELL) detectors consist of an active region composed of InAs quantum dots embedded in In.15Ga.85As quantum wells. DWELL samples were grown using molecular beam epitaxy and fabricated into 320×256 focal plane arrays with indium bumps. The FPA was then hybridized to an Indigo ISC9705 readout circuit and tested. Calibrated blackbody measurements at a device temperature of 77K yield midwave infrared and long wave infrared noise equivalent difference in temperature of ˜55 and 70mK.

  14. Nanometer distance measurements between multicolor quantum dots.

    PubMed

    Antelman, Josh; Wilking-Chang, Connie; Weiss, Shimon; Michalet, Xavier

    2009-05-01

    Quantum dot dimers made of short double-stranded DNA molecules labeled with different color quantum dots at each end were imaged using multicolor stage-scanning confocal microscopy. This approach eliminates chromatic aberration and color registration issues usually encountered in other multicolor imaging techniques. We demonstrate nanometer accuracy in individual distance measurement by suppression of quantum dot blinking and thoroughly characterize the contribution of different effects to the variability observed between measurements. Our analysis opens the way to accurate structural studies of biomolecules and biomolecular complexes using multicolor quantum labeling.

  15. Substitutional impurity in the graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Sierański, K.; Szatkowski, J.

    2015-09-01

    The process of formation of the localized defect states due to substitutional impurity in sp2-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp2 orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H18C51X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) εp energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.

  16. Towards hybrid circuit quantum electrodynamics with quantum dots

    NASA Astrophysics Data System (ADS)

    Viennot, Jérémie J.; Delbecq, Matthieu R.; Bruhat, Laure E.; Dartiailh, Matthieu C.; Desjardins, Matthieu M.; Baillergeau, Matthieu; Cottet, Audrey; Kontos, Takis

    2016-08-01

    Cavity quantum electrodynamics allows one to study the interaction between light and matter at the most elementary level. The methods developed in this field have taught us how to probe and manipulate individual quantum systems like atoms and superconducting quantum bits with an exquisite accuracy. There is now a strong effort to extend further these methods to other quantum systems, and in particular hybrid quantum dot circuits. This could turn out to be instrumental for a noninvasive study of quantum dot circuits and a realization of scalable spin quantum bit architectures. It could also provide an interesting platform for quantum simulation of simple fermion-boson condensed matter systems. In this short review, we discuss the experimental state of the art for hybrid circuit quantum electrodynamics with quantum dots, and we present a simple theoretical modeling of experiments.

  17. Fluorescent Quantum Dots for Biological Labeling

    NASA Technical Reports Server (NTRS)

    McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit

    2003-01-01

    Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.

  18. Magnon-driven quantum dot refrigerators

    NASA Astrophysics Data System (ADS)

    Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan

    2015-12-01

    A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

  19. Clocking an Array of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Khatun, Mahfuza; Mandell, Eric

    2000-10-01

    Preferred Session: Condensed Matter Physics Clocking an Array of Quantum Dots* Eric Mandell and M. Khatun, Ball State University. We report a theoretical analysis of the time-dependent electric field due to a line of charged rods. The effects of both the real and image charge are taken into account. The rods are biased electrostatically to study the dynamical behavior of an array of quantum dots. The barrier heights between the quantum dots are controlled by the electric field. *Supported in part by the Indiana Academy of Science, Center for Energy Research/Education/Services(CERES) and the Office of Academic Research and Sponsored Programs, Ball State University.

  20. Instability-driven quantum dots

    NASA Astrophysics Data System (ADS)

    Aqua, Jean-Noël; Frisch, Thomas

    2015-10-01

    When a film is strained in two dimensions, it can relax by developing a corrugation in the third dimension. We review here the resulting morphological instability that occurs by surface diffusion, called the Asaro-Tiller-Grinfel'd instability (ATG), especially on the paradigmatic silicon/germanium system. The instability is dictated by the balance between the elastic relaxation induced by the morphological evolution, and its surface energy cost. We focus here on its development at the nanoscales in epitaxial systems when a crystal film is coherently deposited on a substrate with a different lattice parameter, thence inducing epitaxial stresses. It eventually leads to the self-organization of quantum dots whose localization is dictated by the instability long-time dynamics. In these systems, new effects, such as film/substrate wetting or crystalline anisotropy, come into play and lead to a variety of behaviors. xml:lang="fr"

  1. Quantum dots and prion proteins

    PubMed Central

    Sobrova, Pavlina; Blazkova, Iva; Chomoucka, Jana; Drbohlavova, Jana; Vaculovicova, Marketa; Kopel, Pavel; Hubalek, Jaromir; Kizek, Rene; Adam, Vojtech

    2013-01-01

    A diagnostics of infectious diseases can be done by the immunologic methods or by the amplification of nucleic acid specific to contagious agent using polymerase chain reaction. However, in transmissible spongiform encephalopathies, the infectious agent, prion protein (PrPSc), has the same sequence of nucleic acids as a naturally occurring protein. The other issue with the diagnosing based on the PrPSc detection is that the pathological form of prion protein is abundant only at late stages of the disease in a brain. Therefore, the diagnostics of prion protein caused diseases represent a sort of challenges as that hosts can incubate infectious prion proteins for many months or even years. Therefore, new in vivo assays for detection of prion proteins and for diagnosis of their relation to neurodegenerative diseases are summarized. Their applicability and future prospects in this field are discussed with particular aim at using quantum dots as fluorescent labels. PMID:24055838

  2. Understanding electronic systems in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Ciftja, Orion

    2013-11-01

    Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting electrons are confined by the Coulomb attraction of the nucleus. Advancement of nanotechnology has, however, provided us with an alternative way to confine electrons by using artificial confining potentials. A typical structure of this nature is the quantum dot, a nanoscale system which consists of few confined electrons. There are many types of quantum dots ranging from self-assembled to miniaturized semiconductor quantum dots. In this work we are interested in electrostatically confined semiconductor quantum dot systems where the electrostatic confining potential that traps the electrons is generated by external electrodes, doping, strain or other factors. A large number of semiconductor quantum dots of this type are fabricated by applying lithographically patterned gate electrodes or by etching on two-dimensional electron gases in semiconductor heterostructures. Because of this, the whole structure can be treated as a confined two-dimensional electron system. Quantum confinement profoundly affects the way in which electrons interact with each other, and external parameters such as a magnetic field. Since a magnetic field affects both the orbital and the spin motion of the electrons, the interplay between quantum confinement, electron-electron correlation effects and the magnetic field gives rise to very interesting physical phenomena. Thus, confined systems of electrons in a semiconductor quantum dot represent a unique opportunity to study fundamental quantum theories in a controllable atomic-like setup. In this work, we describe some common theoretical models which are used to study confined systems of electrons in a two-dimensional semiconductor quantum dot. The main emphasis of the work is to draw attention to important physical phenomena that arise in confined two-dimensional electron systems under various quantum regimes.

  3. Quantum repeaters using orbitals in quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Ohshima, Toshio

    2016-09-01

    We propose quantum repeaters using quantum dot molecules, in which matter-photon entanglement is generated by Raman scatterings in lambda systems composed of various coherent exciton levels formed in the ensembles of asymmetric coupled quantum dots. In our scheme, the wavelength of Stokes and anti-Stokes photons can be chosen to fulfill the requirements of optical fiber communication. Further, the relative superposition phase in the entangled states can be stabilized by the active feedback to the gate voltage in quantum dot system. These characteristics are favorable for implementing our scheme in practice.

  4. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields. PMID:26086207

  5. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  6. Single to quadruple quantum dots with tunable tunnel couplings

    SciTech Connect

    Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K.; Otsuka, T.; Tarucha, S.

    2014-03-17

    We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.

  7. Quantum Dots Investigated for Solar Cells

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.

    2001-01-01

    The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in

  8. Nanomaterials: Earthworms lit with quantum dots

    NASA Astrophysics Data System (ADS)

    Tilley, Richard D.; Cheong, Soshan

    2013-01-01

    Yeast, bacteria and fungi have been used to synthesize a variety of nanocrystals. Now, the metal detoxification process in the gut of an earthworm is exploited to produce biocompatible cadmium telluride quantum dots.

  9. Luminescence blinking of a reacting quantum dot.

    PubMed

    Routzahn, Aaron L; Jain, Prashant K

    2015-04-01

    Luminescence blinking is an inherent feature of optical emission from individual fluorescent molecules and quantum dots. There have been intense efforts, although not with complete resolution, toward the understanding of the mechanistic origin of blinking and also its mitigation in quantum dots. As an advance in our microscopic view of blinking, we show that the luminescence blinking of a quantum dot becomes unusually heavy in the temporal vicinity of a reactive transformation. This stage of heavy blinking is a result of defects/dopants formed within the quantum dot on its path to conversion. The evolution of blinking behavior along the reaction path allows us to measure the lifetime of the critical dopant-related intermediate in the reaction. This work establishes luminescence blinking as a single-nanocrystal level probe of catalytic, photocatalytic, and electrochemical events occurring in the solid-state or on semiconductor surfaces.

  10. Quantum dots: A charge for blinking

    NASA Astrophysics Data System (ADS)

    Krauss, Todd D.; Peterson, Jeffrey J.

    2012-01-01

    No accepted description of luminescent blinking in quantum dots is currently available. Now, experiments probing the connection between charge and fluorescence intensity fluctuations unveil an unexpected source of blinking, significantly advancing our fundamental understanding of this baffling phenomenon.

  11. Teleportation on a quantum dot array.

    PubMed

    de Pasquale, F; Giorgi, G; Paganelli, S

    2004-09-17

    We present a model of quantum teleportation protocol based on a double quantum dot array. The unknown qubit is encoded using a pair of quantum dots, with one excess electron, coupled by tunneling. It is shown how to create a maximally entangled state using an adiabatically increasing Coulomb repulsion between different dot pairs. This entangled state is exploited to perform teleportation again using an adiabatic coupling between itself and the incoming unknown state. Finally, a sudden separation of Bob's qubit allows a time evolution of Alice's, which amounts to a modified version of standard Bell measurement. A transmission over a long distance could be obtained by considering the entangled state of a chain of N coupled double quantum dots. The system is shown to be increasingly robust with N against decoherence due to phonons.

  12. Generation of heralded entanglement between distant quantum dot hole spins

    NASA Astrophysics Data System (ADS)

    Delteil, Aymeric

    Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of

  13. Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2015-02-07

    Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

  14. First principle thousand atom quantum dot calculations

    SciTech Connect

    Wang, Lin-Wang; Li, Jingbo

    2004-03-30

    A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.

  15. Renormalization in Periodically Driven Quantum Dots.

    PubMed

    Eissing, A K; Meden, V; Kennes, D M

    2016-01-15

    We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump. PMID:26824557

  16. Electron Spin Dynamics in Semiconductor Quantum Dots

    SciTech Connect

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-07-15

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  17. Quantum Dots in Gated Nanowires and Nanotubes

    NASA Astrophysics Data System (ADS)

    Churchill, Hugh Olen Hill

    This thesis describes experiments on quantum dots made by locally gating one-dimensional quantum wires. The first experiment studies a double quantum dot device formed in a Ge/Si core/shell nanowire. In addition to measuring transport through the double dot, we detect changes in the charge occupancy of the double dot by capacitively coupling it to a third quantum dot on a separate nanowire using a floating gate. We demonstrate tunable tunnel coupling of the double dot and quantify the strength of the tunneling using the charge sensor. The second set of experiments concerns carbon nanotube double quantum dots. In the first nanotube experiment, spin-dependent transport through the double dot is compared in two sets of devices. The first set is made with carbon containing the natural abundance of 12C (99%) and 13C (1%), the second set with the 99% 13C and 1% 12C. In the devices with predominantly 13C, we find evidence in spin-dependent transport of the interaction between the electron spins and the 13C nuclear spins that was much stronger than expected and not present in the 12C devices. In the second nanotube experiment, pulsed gate experiments are used to measure the timescales of spin relaxation and dephasing in a two-electron double quantum dot. The relaxation time is longest at zero magnetic field and goes through a minimum at higher field, consistent with the spin-orbit-modified electronic spectrum of carbon nanotubes. We measure a short dephasing time consistent with the anomalously strong electron-nuclear interaction inferred from the first nanotube experiment.

  18. Metamorphic quantum dots: Quite different nanostructures

    SciTech Connect

    Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

    2010-09-15

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

  19. Advancements in the Field of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  20. Luminescent Quantum Dots as Ultrasensitive Biological Labels

    NASA Astrophysics Data System (ADS)

    Nie, Shuming

    2000-03-01

    Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.

  1. Spectroscopy characterization and quantum yield determination of quantum dots

    NASA Astrophysics Data System (ADS)

    Contreras Ortiz, S. N.; Mejía Ospino, E.; Cabanzo, R.

    2016-02-01

    In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum.

  2. Microsecond-sustained lasing from colloidal quantum dot solids

    PubMed Central

    Adachi, Michael M.; Fan, Fengjia; Sellan, Daniel P.; Hoogland, Sjoerd; Voznyy, Oleksandr; Houtepen, Arjan J.; Parrish, Kevin D.; Kanjanaboos, Pongsakorn; Malen, Jonathan A.; Sargent, Edward H.

    2015-01-01

    Colloidal quantum dots have grown in interest as materials for light amplification and lasing in view of their bright photoluminescence, convenient solution processing and size-controlled spectral tunability. To date, lasing in colloidal quantum dot solids has been limited to the nanosecond temporal regime, curtailing their application in systems that require more sustained emission. Here we find that the chief cause of nanosecond-only operation has been thermal runaway: the combination of rapid heat injection from the pump source, poor heat removal and a highly temperature-dependent threshold. We show microsecond-sustained lasing, achieved by placing ultra-compact colloidal quantum dot films on a thermally conductive substrate, the combination of which minimizes heat accumulation. Specifically, we employ inorganic-halide-capped quantum dots that exhibit high modal gain (1,200 cm−1) and an ultralow amplified spontaneous emission threshold (average peak power of ∼50 kW cm−2) and rely on an optical structure that dissipates heat while offering minimal modal loss. PMID:26493282

  3. Microsecond-sustained lasing from colloidal quantum dot solids.

    PubMed

    Adachi, Michael M; Fan, Fengjia; Sellan, Daniel P; Hoogland, Sjoerd; Voznyy, Oleksandr; Houtepen, Arjan J; Parrish, Kevin D; Kanjanaboos, Pongsakorn; Malen, Jonathan A; Sargent, Edward H

    2015-01-01

    Colloidal quantum dots have grown in interest as materials for light amplification and lasing in view of their bright photoluminescence, convenient solution processing and size-controlled spectral tunability. To date, lasing in colloidal quantum dot solids has been limited to the nanosecond temporal regime, curtailing their application in systems that require more sustained emission. Here we find that the chief cause of nanosecond-only operation has been thermal runaway: the combination of rapid heat injection from the pump source, poor heat removal and a highly temperature-dependent threshold. We show microsecond-sustained lasing, achieved by placing ultra-compact colloidal quantum dot films on a thermally conductive substrate, the combination of which minimizes heat accumulation. Specifically, we employ inorganic-halide-capped quantum dots that exhibit high modal gain (1,200 cm(-1)) and an ultralow amplified spontaneous emission threshold (average peak power of ∼50 kW cm(-2)) and rely on an optical structure that dissipates heat while offering minimal modal loss. PMID:26493282

  4. Quantum dots as active material for quantum cascade lasers: comparison to quantum wells

    NASA Astrophysics Data System (ADS)

    Michael, Stephan; Chow, Weng W.; Schneider, Hans Christian

    2016-03-01

    We review a microscopic laser theory for quantum dots as active material for quantum cascade lasers, in which carrier collisions are treated at the level of quantum kinetic equations. The computed characteristics of such a quantum-dot active material are compared to a state-of-the-art quantum-well quantum cascade laser. We find that the current requirement to achieve a comparable gain-length product is reduced compared to that of the quantum-well quantum cascade laser.

  5. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    NASA Astrophysics Data System (ADS)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  6. Dot-in-Well Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

    2008-01-01

    Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

  7. Origins and optimization of entanglement in plasmonically coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Otten, Matthew; Larson, Jeffrey; Min, Misun; Wild, Stefan M.; Pelton, Matthew; Gray, Stephen K.

    2016-08-01

    A system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines for maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.

  8. Quantum efficiency of a double quantum dot microwave photon detector

    NASA Astrophysics Data System (ADS)

    Wong, Clement; Vavilov, Maxim

    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we study charge transfer through a double quantum dot (DQD) capacitively coupled to a superconducting cavity subject to a microwave field. We analyze the DQD current response using input-output theory and determine the optimal parameter regime for complete absorption of radiation and efficient conversion of microwave photons to electric current. For experimentally available DQD systems, we show that the cavity-coupled DQD operates as a photon-to-charge converter with quantum efficiencies up to 80% C.W. acknowledges support by the Intelligence Community Postdoctoral Research Fellowship Program.

  9. Electronic Structure of Few-Electron Quantum Dot Molecules

    NASA Astrophysics Data System (ADS)

    Popsueva, V.; Hansen, J. P.; Caillat, J.

    2007-12-01

    We present a study of strongly correlated few-electron quantum dots, exploring the spectra of various few-electron quantum dot molecules: a double (diatomic) structure a quadruple two-electron quantum dot, and a three-electron double dot. Electron energy spectra are computed for different values of dot separation. All spectra show clear band structures and can be understood from asymptotical properties of the system.

  10. Optical Properties of InGaN Quantum Dots in Monolithic Pillar Microcavities

    NASA Astrophysics Data System (ADS)

    Seyfried, M.; Sebald, K.; Dartsch, H.; Tessarek, C.; Figge, S.; Kruse, C.; Hommel, D.; Florian, M.; Jahnke, F.; Gutowski, J.

    2011-12-01

    InGaN quantum dots were successfully implemented into fully epitaxially grown nitride-based monolithic microcavities. Measured discrete modes of airpost pillar microcavities prepared out of the planar sample are compared to theoretical simulations based on a vectorial-transfer matrix method. Quality factors of up to 280 have been achieved and the emission of a single quantum dot was traced up to a temperature of 125 K.

  11. InN Quantum Dot Based Infra-Red Photodetectors.

    PubMed

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator. PMID:27398511

  12. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  13. Engineering the hole confinement for CdTe-based quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Kłopotowski, Ł.; Wojnar, P.; Kret, S.; Parlińska-Wojtan, M.; Fronc, K.; Wojtowicz, T.; Karczewski, G.

    2015-06-01

    We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.

  14. Engineering the hole confinement for CdTe-based quantum dot molecules

    SciTech Connect

    Kłopotowski, Ł. Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G.

    2015-06-14

    We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.

  15. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    DOEpatents

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  16. Electrical control of quantum dot spin qubits

    NASA Astrophysics Data System (ADS)

    Laird, Edward Alexander

    This thesis presents experiments exploring the interactions of electron spins with electric fields in devices of up to four quantum dots. These experiments are particularly motivated by the prospect of using electric fields to control spin qubits. A novel hyperfine effect on a single spin in a quantum dot is presented in Chapter 2. Fluctuations of the nuclear polarization allow single-spin resonance to be driven by an oscillating electric field. Spin resonance spectroscopy revealed a nuclear polarization built up inside the quantum dot device by driving the resonance. The evolution of two coupled spins is controlled by the combination of hyperfine interaction, which tends to cause spin dephasing, and exchange, which tends to prevent it. In Chapter 3, dephasing is studied in a device with tunable exchange, probing the crossover between exchange-dominated and hyperfine-dominated regimes. In agreement with theoretical predictions, oscillations of the spin conversion probability and saturation of dephasing are observed. Chapter 4 deals with a three-dot device, suggested as a potential qubit controlled entirely by exchange. Preparation and readout of the qubit state are demonstrated, together with one out of two coherent exchange operations needed for arbitrary manipulations. A new readout technique allowing rapid device measurement is described. In Chapter 5, an attempt to make a two-qubit gate using a four-dot device is presented. Although spin qubit operation has not yet been possible, the electrostatic interaction between pairs of dots was measured to be sufficient in principle for coherent qubit coupling.

  17. Quantum Dot-Based Cell Motility Assay

    SciTech Connect

    Gu, Weiwei; Pellegrino, Teresa; Parak Wolfgang J; Boudreau,Rosanne; Le Gros, Mark A.; Gerion, Daniele; Alivisatos, A. Paul; Larabell, Carolyn A.

    2005-06-06

    Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.

  18. Isotopically enhanced triple-quantum-dot qubit.

    PubMed

    Eng, Kevin; Ladd, Thaddeus D; Smith, Aaron; Borselli, Matthew G; Kiselev, Andrey A; Fong, Bryan H; Holabird, Kevin S; Hazard, Thomas M; Huang, Biqin; Deelman, Peter W; Milosavljevic, Ivan; Schmitz, Adele E; Ross, Richard S; Gyure, Mark F; Hunter, Andrew T

    2015-05-01

    Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186

  19. Three-terminal quantum-dot refrigerators

    NASA Astrophysics Data System (ADS)

    Zhang, Yanchao; Lin, Guoxing; Chen, Jincan

    2015-05-01

    Based on two capacitively coupled quantum dots in the Coulomb-blockade regime, a model of three-terminal quantum-dot refrigerators is proposed. With the help of the master equation, the transport properties of steady-state charge current and energy flow between two quantum dots and thermal reservoirs are revealed. It is expounded that such a structure can be used to construct a refrigerator by controlling the voltage bias and temperature ratio. The thermodynamic performance characteristics of the refrigerator are analyzed, including the cooling power, coefficient of performance (COP), maximum cooling power, and maximum COP. Moreover, the optimal regions of main performance parameters are determined. The influence of dissipative tunnel processes on the optimal performance is discussed in detail. Finally, the performance characteristics of the refrigerators operated in two different cases are compared.

  20. Isotopically enhanced triple-quantum-dot qubit

    PubMed Central

    Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.

    2015-01-01

    Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186

  1. Fluorescence correlation spectroscopy using quantum dots: advances, challenges and opportunities.

    PubMed

    Heuff, Romey F; Swift, Jody L; Cramb, David T

    2007-04-28

    Semiconductor nanocrystals (quantum dots) have been increasingly employed in measuring the dynamic behavior of biomacromolecules using fluorescence correlation spectroscopy. This poses a challenge, because quantum dots display their own dynamic behavior in the form of intermittent photoluminescence, also known as blinking. In this review, the manifestation of blinking in correlation spectroscopy will be explored, preceded by an examination of quantum dot blinking in general.

  2. Resonant tunneling in graphene pseudomagnetic quantum dots.

    PubMed

    Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro

    2013-06-12

    Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

  3. Potential clinical applications of quantum dots

    PubMed Central

    Medintz, Igor L; Mattoussi, Hedi; Clapp, Aaron R

    2008-01-01

    The use of luminescent colloidal quantum dots in biological investigations has increased dramatically over the past several years due to their unique size-dependent optical properties and recent advances in biofunctionalization. In this review, we describe the methods for generating high-quality nanocrystals and report on current and potential uses of these versatile materials. Numerous examples are provided in several key areas including cell labeling, biosensing, in vivo imaging, bimodal magnetic-luminescent imaging, and diagnostics. We also explore toxicity issues surrounding these materials and speculate about the future uses of quantum dots in a clinical setting. PMID:18686776

  4. Bilayer graphene quantum dot defined by topgates

    SciTech Connect

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  5. Ambipolar quantum dots in intrinsic silicon

    SciTech Connect

    Betz, A. C. Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.

    2014-10-13

    We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.

  6. Cavity quantum electrodynamics with carbon nanotube quantum dots

    NASA Astrophysics Data System (ADS)

    Kontos, Takis

    Cavity quantum electrodynamics techniques have turned out to be instrumental to probe or manipulate the electronic states of nanoscale circuits. Recently, cavity QED architectures have been extended to quantum dot circuits. These circuits are appealing since other degrees of freedom than the traditional ones (e.g. those of superconducting circuits) can be investigated. I will show how one can use carbon nanotube based quantum dots in that context. In particular, I will focus on the coherent coupling of a single spin or non-local Cooper pairs to cavity photons. Quantum dots also exhibit a wide variety of many body phenomena. The cQED architecture could also be instrumental for understanding them. One of the most paradigmatic phenomenon is the Kondo effect which is at the heart of many electron correlation effects. I will show that a cQED architecture has allowed us to observe the decoupling of spin and charge excitations in a Kondo system.

  7. Formation and ordering of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Atkinson, Paola; Schmidt, Oliver G.; Bremner, Stephen P.; Ritchie, David A.

    2008-10-01

    Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).

  8. Nonlocal quantum cloning via quantum dots trapped in distant cavities

    NASA Astrophysics Data System (ADS)

    Yu, Tao; Zhu, Ai-Dong; Zhang, Shou

    2012-05-01

    A scheme for implementing nonlocal quantum cloning via quantum dots trapped in cavities is proposed. By modulating the parameters of the system, the optimal 1 → 2 universal quantum cloning machine, 1 → 2 phase-covariant cloning machine, and 1 → 3 economical phase-covariant cloning machine are constructed. The present scheme, which is attainable with current technology, saves two qubits compared with previous cloning machines.

  9. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  10. Slow electron cooling in colloidal quantum dots.

    PubMed

    Pandey, Anshu; Guyot-Sionnest, Philippe

    2008-11-01

    Hot electrons in semiconductors lose their energy very quickly (within picoseconds) to lattice vibrations. Slowing this energy loss could prove useful for more efficient photovoltaic or infrared devices. With their well-separated electronic states, quantum dots should display slow relaxation, but other mechanisms have made it difficult to observe. We report slow intraband relaxation (>1 nanosecond) in colloidal quantum dots. The small cadmium selenide (CdSe) dots, with an intraband energy separation of approximately 0.25 electron volts, are capped by an epitaxial zinc selenide (ZnSe) shell. The shell is terminated by a CdSe passivating layer to remove electron traps and is covered by ligands of low infrared absorbance (alkane thiols) at the intraband energy. We found that relaxation is markedly slowed with increasing ZnSe shell thickness.

  11. Applications of quantum dots in cell biology

    NASA Astrophysics Data System (ADS)

    Barroso, Margarida; Mehdibeigi, Roshanak; Brogan, Louise

    2006-02-01

    Quantum dots promise to revolutionize the way fluorescence imaging is used in the Cell Biology field. The unique fluorescent spectral characteristics, high photostability, low photobleaching and tight emission spectra of quantum dots, position them above traditional dyes. Here we will address the ability of EviTags, which are water stabilized quantum dot products from Evident Technologies, to behave as effective FRET donors in cells. EviTag-Hops Yellow (HY; Emission 566nm; Donor) conjugated to biotin were bound to stretapvidin-Alexa568 (Acceptor) conjugates. These HYbiotin-streptavidin-Alexa568 FRET EviTag conjugates were then internalized by fluid-phase into non-polarized MDCK cells. Confocal microscopy detects these FRET EviTag conjugates in endocytic compartments, suggesting that EviTags can be used to track fluid-phase internalization and trafficking. EviTags are shown here to be effective FRET donors when internalized into cells. Upon pairing with the appropriate acceptor dyes, quantum dots will reduce the laborious data processing that is required to compensate for bleed through contamination between organic dye donor and acceptor pair signals. The EviTag technology will simplify and expand the use of FRET in the analysis of cellular processes that may involve protein-protein interactions and other complex cellular processes.

  12. Nonequilibrium dephasing in Coulomb blockaded quantum dots.

    PubMed

    Altland, Alexander; Egger, Reinhold

    2009-01-16

    We present a theory of zero-bias anomalies and dephasing rates for a Coulomb-blockaded quantum dot, driven out of equilibrium by coupling to voltage biased source and drain leads. We interpret our results in terms of the statistics of voltage fluctuations in the system.

  13. Saturating optical resonances in quantum dots

    NASA Astrophysics Data System (ADS)

    Nair, Selvakumar V.; Rustagi, K. C.

    Optical bistability in quantum dots, recently proposed by Chemla and Miller, is studied in a two-resonance model. We show that for such classical electromagnetic resonances the applicability of a two-resonance model is far more restrictive than for those in atoms.

  14. Producing Quantum Dots by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius

    2006-01-01

    An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.

  15. Quantum-dot infrared photodetectors: a review

    NASA Astrophysics Data System (ADS)

    Stiff-Roberts, Adrienne D.

    2009-04-01

    Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (>=150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.

  16. Semiconductor quantum dot scintillation under gamma-ray irradiation

    SciTech Connect

    Letant, S E; Wang, T

    2006-08-23

    We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting

  17. Merging quantum dots, biomolecules, and polymers for record performance from solution-processed optoelectronics

    NASA Astrophysics Data System (ADS)

    Sargent, Edward H.

    2006-02-01

    We apply discoveries in nanoscience towards applications relevant to health, environment, security, and connectedness. A materials fundamental to our research is the quantum dot. Each quantum dot is a particle of semiconductor only a few nanometers in diameter. These semiconductor nanoparticles confine electrons to within their characteristic wavelength. Thus, just as changing the length of a guitar string changes the frequency of sound produced, so too does changing the size of a quantum dot alter the frequency - hence energy - the electron can adopt. As a result, quantum dots are tunable matter (Fig. 2). We work with colloidal quantum dots, nanoparticles produced in, and processed from, solution. They can be coated onto nearly anything - a semiconductor substrate, a window, a wall, fabric. Compared to epitaxially-grown semiconductors used to make optical detectors, lasers, and modulators, they are cheap, safe to work with, and easy to produce. Much of our work with quantum dots involves infrared light - its measurement, production, modulation, and harnessing. While there exists an abundance of work in colloidal quantum dots active in the visible, there are fewer results in the infrared. The wavelengths between 1000 and 2000 nm are nonetheless of great practical importance: half of the sun's power reaching the earth lies in this wavelength range; 'biological windows' in which tissue is relatively transparent and does not emit background light (autofluorescence) exist in the infrared; fiber-optic networks operate at 1.3 and 1.5 um.

  18. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

    NASA Astrophysics Data System (ADS)

    Abramkin, D. S.; Rumynin, K. M.; Bakarov, A. K.; Kolotovkina, D. A.; Gutakovskii, A. K.; Shamirzaev, T. S.

    2016-06-01

    The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect X XY valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect X valley of the conduction band of the AlAs matrix.

  19. Optical properties of quantum-dot-doped liquid scintillators

    PubMed Central

    Aberle, C.; Li, J.J.; Weiss, S.; Winslow, L.

    2014-01-01

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO. PMID:25392711

  20. Non-Markovian full counting statistics in quantum dot molecules.

    PubMed

    Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming

    2015-03-10

    Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules.

  1. Quantum and classical thermoelectric transport in quantum dot nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Yang, Ronggui

    2011-10-01

    Quantum dot nanocomposites are potentially high-efficiency thermoelectric materials, which could outperform superlattices and random nanocomposites in terms of manufacturing cost-effectiveness and material properties because of the reduction of thermal conductivity due to the phonon-interface scattering, the enhancement of Seebeck coefficient due to the formation of minibands, and the enhancement of electrical conductivity due to the phonon-bottleneck effect in electron-phonon scattering for quantum-confined electrons. In this paper, we investigate the thermoelectric transport properties of quantum dot nanocomposites through a two-channel transport model that includes the transport of quantum-confined electrons through the hopping mechanism and the semiclassical transport of bulk-like electrons. For the quantum-confined electrons whose wave functions are confined in the quantum dots with overlapping tail extending to the matrix, we develop a tight-binding model together with the Kubo formula and the Green's function method to describe the transport processes of these electrons. The formation of minibands due to the quantum confinement and the phonon-bottleneck effect on carrier-phonon scattering are considered. For transport of bulk-like electrons, a Boltzmann-transport-equation-based semiclassical model is used to describe the multiband transport processes of carriers. The intrinsic carrier scatterings as well as the carrier-interface scattering of these bulk-like electrons are considered. We then apply the two-channel transport model to predict thermoelectric transport properties of n-type PbSe/PbTe quantum dot nanocomposites with PbSe quantum dots uniformly embedded in the PbTe matrix. The dependence of thermoelectric transport coefficients on the size of quantum dots, interdot distance, doping concentration, and temperature are studied in detail. Due to the formation of minibands and the phonon-bottleneck effect on carrier-phonon scattering, we show that

  2. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

    PubMed Central

    2013-01-01

    We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage. PMID:23651470

  3. Carbon nanotube quantum dots on hexagonal boron nitride

    SciTech Connect

    Baumgartner, A. Abulizi, G.; Gramich, J.; Schönenberger, C.; Watanabe, K.; Taniguchi, T.

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  4. Entangling distant quantum dots using classical interference

    NASA Astrophysics Data System (ADS)

    Busch, Jonathan; Kyoseva, Elica S.; Trupke, Michael; Beige, Almut

    2008-10-01

    We show that it is possible to employ reservoir engineering to turn two distant and relatively bad cavities into one good cavity with a tunable spontaneous decay rate. As a result, quantum computing schemes, which would otherwise require the shuttling of atomic qubits in and out of an optical resonator, can now be applied to distant quantum dots. To illustrate this we transform a recent proposal to entangle two qubits via the observation of macroscopic fluorescence signals [J. Metz , Phys. Rev. Lett. 97, 040503 (2006)] to the electron-spin states of two semiconductor quantum dots. Our scheme requires neither the coherent control of qubit-qubit interactions nor the detection of single photons. Moreover, the scheme is relatively robust against spin-bath couplings, parameter fluctuations, and the spontaneous emission of photons.

  5. Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

    SciTech Connect

    Beltran, AM; Ben, Teresa; Sales, David; Sanchez, AM; Ripalda, JM; Taboada, Alfonso G; Varela del Arco, Maria; Pennycook, Stephen J; Molina, S. I.

    2011-01-01

    We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.

  6. Quantum Computation Using Optically Coupled Quantum Dot Arrays

    NASA Technical Reports Server (NTRS)

    Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)

    1998-01-01

    A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.

  7. Theory of the Quantum Dot Hybrid Qubit

    NASA Astrophysics Data System (ADS)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  8. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    NASA Astrophysics Data System (ADS)

    Betz, A. C.; Tagliaferri, M. L. V.; Vinet, M.; Broström, M.; Sanquer, M.; Ferguson, A. J.; Gonzalez-Zalba, M. F.

    2016-05-01

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  9. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  10. Improving the performance of bright quantum dot single photon sources using temporal filtering via amplitude modulation

    PubMed Central

    Ates, Serkan; Agha, Imad; Gulinatti, Angelo; Rech, Ivan; Badolato, Antonio; Srinivasan, Kartik

    2013-01-01

    Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit nonideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of systems based on single solid-state quantum emitters, which often suffer from excess dephasing and multi-photon background emission. PMID:23466520

  11. Small bright charged colloidal quantum dots.

    PubMed

    Qin, Wei; Liu, Heng; Guyot-Sionnest, Philippe

    2014-01-28

    Using electrochemical charge injection, the fluorescence lifetimes of negatively charged core/shell CdTe/CdSe QDs are measured as a function of core size and shell thickness. It is found that the ensemble negative trion lifetimes reach a maximum (∼4.5 ns) for an intermediate shell thickness. This leads to the smallest particles (∼4.5 nm) with the brightest trion to date. Single dot measurements show that the negative charge suppresses blinking and that the trion can be as bright as the exciton at room temperature. In contrast, the biexciton lifetimes remain short and exhibit only a monotonous increase with shell thickness, showing no correlation with the negative trion decays. The suppression of the Auger process in small negatively charged CdTe/CdSe quantum dots is unprecedented and a significant departure from prior results with ultrathick CdSe/CdS core/shell or dot-in-rod structures. The proposed reason for the optimum shell thickness is that the electron-hole overlap is restricted to the CdTe core while the electron is tuned to have zero kinetic energy in the core for that optimum shell thickness. The different trend of the biexciton lifetime is not explained but tentatively attributed to shorter-lived positive trions at smaller sizes. These results improve our understanding of multiexciton recombination in colloidal quantum dots and may lead to the design of bright charged QDs for more efficient light-emitting devices.

  12. Scanning photoluminescent spectroscopy of bioconjugated quantum dots

    NASA Astrophysics Data System (ADS)

    Chornokur, G.; Ostapenko, S.; Oleynik, E.; Phelan, C.; Korsunska, N.; Kryshtab, T.; Zhang, J.; Wolcott, A.; Sellers, T.

    2009-04-01

    We report on the application of the bio-conjugated quantum dots (QDs) for a "sandwich" enzyme-linked immunosorbent assay (ELISA) cancer testing technique. Quantum dot ELISA detection of the cancer PSA antigen at concentrations as low as 0.01 ng/ml which is ˜50 times lower than the classic "sandwich" ELISA was demonstrated. Scanning photoluminescence (PL) spectroscopy was performed on dried ELISA wells and the results compared with the same QD samples dried on a solid substrate. We confirmed a "blue" up to 37 nm PL spectral shift in a case of QDs conjugated to PSA antibodies. Increasing of the "blue" spectral shift was observed at lower PSA antigen concentrations. The results can be used to improve sensitivity of "sandwich" ELISA cancer antigen detection.

  13. Separability and dynamical symmetry of Quantum Dots

    SciTech Connect

    Zhang, P.-M.; Zou, L.-P.; Horvathy, P.A.; Gibbons, G.W.

    2014-02-15

    The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.

  14. Quantum dot molecular beacons for DNA detection.

    PubMed

    Cady, Nathaniel C

    2009-01-01

    Molecular beacons have become an important fluorescent probe for sequence-specific DNA detection. To improve the sensitivity and robustness of molecular beacon assays, fluorescent semiconductor quantum dots (QDs) are now being used as the fluorescent moiety for molecular beacon synthesis. Multiple linkage strategies can be used for attaching molecular beacon DNA to QDs, and multiple quenchers, including gold particles, can be used for fluorescence quenching. Covalent attachment of QDs to DNA can be achieved through amide linkage, and affinity-based attachment can be achieved with streptavidin-biotin linkage. We have shown that these linkage strategies can be used to successfully create quantum dot molecular beacons that can be used in DNA detection assays with high specificity.

  15. TOPICAL REVIEW: Polar and nonpolar GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Daudin, Bruno

    2008-11-01

    Growth, structural and optical properties of GaN quantum dots are reviewed, with a special emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique makes it particularly adapted to growth of quantum dots, either polar (c-plane) or nonpolar (a-plane and m-plane). After describing in detail the growth process and analyzing the morphology of the dots, we review the optical properties of these nanostructures and discuss the properties of single dots.

  16. Relaxation dynamics in correlated quantum dots

    SciTech Connect

    Andergassen, S.; Schuricht, D.; Pletyukhov, M.; Schoeller, H.

    2014-12-04

    We study quantum many-body effects on the real-time evolution of the current through quantum dots. By using a non-equilibrium renormalization group approach, we provide analytic results for the relaxation dynamics into the stationary state and identify the microscopic cutoff scales that determine the transport rates. We find rich non-equilibrium physics induced by the interplay of the different energy scales. While the short-time limit is governed by universal dynamics, the long-time behavior features characteristic oscillations as well as an interplay of exponential and power-law decay.

  17. Si quantum dots and different aspects of applications

    NASA Astrophysics Data System (ADS)

    Torchynska, Tetyana V.

    2011-09-01

    This paper presents briefly the history of the study of Si quantum dot (QDs) structures and the advances of different applications of Si quantum dots (QDs) in quantum electronics, such as: Si QD light emitting diodes, Si QD solar cells and memory structures, Si QD based one electron devices and double QD structures for spintronics [1].

  18. The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states

    SciTech Connect

    Wu, Jiang; Passmore, Brandon; Manasreh, M. O.

    2015-08-28

    InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband and interband optical transitions. The electron filling of self-assembled InAs quantum dots was varied by direct doping of quantum dots with different concentrations. Photoresponse in the near infrared and middle wavelength infrared spectral region was observed from samples with low quantum dot filling. Although undoped quantum dots were favored for interband transitions with the absence of a second optical excitation in the near infrared region, doped quantum dots were preferred to improve intraband transitions in the middle wavelength infrared region. As a result, partial filling of quantum dot was required, to the extent of maintaining a low dark current, to enhance the dual-band photoresponse through the confined electron states.

  19. Blinking statistics of silicon quantum dots.

    PubMed

    Bruhn, Benjamin; Valenta, Jan; Sangghaleh, Fatemeh; Linnros, Jan

    2011-12-14

    The blinking statistics of numerous single silicon quantum dots fabricated by electron-beam lithography, plasma etching, and oxidation have been analyzed. Purely exponential on- and off-time distributions were found consistent with the absence of statistical aging. This is in contrast to blinking reports in the literature where power-law distributions prevail as well as observations of statistical aging in nanocrystal ensembles. A linear increase of the switching frequency with excitation power density indicates a domination of single-photon absorption processes, possibly through a direct transfer of charges to trap states without the need for a bimolecular Auger mechanism. Photoluminescence saturation with increasing excitation is not observed; however, there is a threshold in excitation (coinciding with a mean occupation of one exciton per nanocrystal) where a change from linear to square-root increase occurs. Finally, the statistics of blinking of single quantum dots in terms of average on-time, blinking frequency and blinking amplitude reveal large variations (several orders) without any significant correlation demonstrating the individual microscopic character of each quantum dot.

  20. Growth and thermal properties of doped monocrystalline titanium-silicide based quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Savelli, G.; Silveira Stein, S.; Bernard-Granger, G.; Faucherand, P.; Montès, L.

    2016-04-01

    This paper presents the growth mechanism of a monocrystalline silicide quantum dot superlattices (QDSL) grown by reduced pressure chemical vapor deposition (RPCVD). QDSL are made of TiSi2-based nanodots scattered in a p-doped Si90Ge10 matrix. It is the first time that the growth of a p-type monocrystalline QDSL is presented. We focus here on the growth mechanisms of QDSL and the influence of nanostructuration on their thermal properties. Thus, the dots surface deposition, the dots embedding mechanisms and the final QDSL growths are studied. The crystallographic structures and chemical properties are presented, as well as the thermal properties. It will be shown that some specific mechanisms occur such as the formation of self-formed quantum well superlattices and the dopant accumulation near the quantum dots. Finally, a slight decrease of the QDSL thermal conductivity has been measured compared to the reference sample.

  1. Quantum dot spectroscopy using a single phosphorus donor

    NASA Astrophysics Data System (ADS)

    Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.

    2015-12-01

    Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.

  2. Si, Ge, and SiGe quantum wires and quantum dots

    NASA Astrophysics Data System (ADS)

    Pearsall, T. P.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses Si, Ge, and SiGe quantum wire and quantum dot structures, the synthesis of quantum wires and quantum dots, and applications of SiGe quantum-dot structures as photodetectors, light-emitting diodes, for optical amplification and as Si quantum-dot memories.

  3. GaN quantum dots by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Daudin, B.; Adelmann, C.; Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Fossard, F.; Rouvière, J. L.

    2004-03-01

    The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.

  4. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  5. Realizing Rec. 2020 color gamut with quantum dot displays.

    PubMed

    Zhu, Ruidong; Luo, Zhenyue; Chen, Haiwei; Dong, Yajie; Wu, Shin-Tson

    2015-09-01

    We analyze how to realize Rec. 2020 wide color gamut with quantum dots. For photoluminescence, our simulation indicates that we are able to achieve over 97% of the Rec. 2020 standard with quantum dots by optimizing the emission spectra and redesigning the color filters. For electroluminescence, by optimizing the emission spectra of quantum dots is adequate to render over 97% of the Rec. 2020 standard. We also analyze the efficiency and angular performance of these devices, and then compare results with LCDs using green and red phosphors-based LED backlight. Our results indicate that quantum dot display is an outstanding candidate for achieving wide color gamut and high optical efficiency.

  6. Imaging ligand-gated ion channels with quantum dots

    NASA Astrophysics Data System (ADS)

    Tomlinson, I. D.; Orndorff, Rebecca L.; Gussin, Hélène; Mason, John N.; Blakely, Randy D.; Pepperberg, David R.; Rosenthal, Sandra J.

    2007-02-01

    In this paper we report two different methodologies for labeling ligand-gated receptors. The first of these builds upon our earlier work with serotonin conjugated quantum dots and our studies with pegilated quantum dots to reduce non specific binding. In this approach a pegilated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphillic polymer derivative of poly acrylamide. These conjugates were used to image the GABA C receptor in oocytes. An alternative approach was used to image tissue sections to study nicotinic acetylcholine receptors in the neuro muscular junction with biotinylated Bungerotoxin and streptavidin coated quantum dots.

  7. Silver-enhanced fluorescence emission of single quantum dot nanocomposites.

    PubMed

    Fu, Yi; Zhang, Jian; Lakowicz, Joseph R

    2009-01-21

    A novel plasmon-coupled quantum dot (QD) nanocomposite via covalently interfacing the QD surfaces with silver nanoparticles was developed with greatly reduced blinking and enhanced emission fluorescence.

  8. Terahertz transmission through rings of quantum dots-nanogap

    NASA Astrophysics Data System (ADS)

    Tripathi, Laxmi-Narayan; Bahk, Young-Mi; Choi, Geunchang; Han, Sanghoon; Park, Namkyoo; Kim, Dai-Sik

    2016-03-01

    We report resonant funneling of terahertz (THz) waves through (9 ± 1) nm wide quantum dots-nanogap of cadmium selenide quantum dots silver nanogap metamaterials. We observed a giant THz intensity enhancement (∼104) through the quantum dots-nanogap at the resonant frequency. We, further report the experimentally measured effective mode indices for these metamaterials. A finite difference time domain simulation of the nanogap enabled by the quantum dots supports the experimentally measured THz intensity enhancement across the nanogap. We propose that these low effective mode index terahertz resonators will be useful as bio/chemical sensors, gain-enhanced antennas, and wave guides.

  9. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    SciTech Connect

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-08-03

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.

  10. Single-electron Spin Resonance in a Quadruple Quantum Dot

    PubMed Central

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2016-01-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible. PMID:27550534

  11. Single-electron Spin Resonance in a Quadruple Quantum Dot.

    PubMed

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo

    2016-01-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible. PMID:27550534

  12. Silicon quantum dots: fine-tuning to maturity

    NASA Astrophysics Data System (ADS)

    Morello, Andrea

    2015-12-01

    Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.

  13. Silicon quantum dots: fine-tuning to maturity.

    PubMed

    Morello, Andrea

    2015-12-18

    Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science. PMID:26584678

  14. Single-electron Spin Resonance in a Quadruple Quantum Dot.

    PubMed

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo

    2016-08-23

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

  15. Single-electron Spin Resonance in a Quadruple Quantum Dot

    NASA Astrophysics Data System (ADS)

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2016-08-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

  16. Self-Assembled Quantum Dots of Indium

    NASA Astrophysics Data System (ADS)

    Leonard, Devin Blaine

    1995-01-01

    The deposition of InAs or In_ xGa_{1-x}As upon GaAs substrates by molecular beam epitaxy (MBE) generally proceeds via the mode first described by Stranski and von Krastanow (SK). After the deposition of a certain thickness of this material, small islands of the deposited material nucleate on the surface. The island formation is attributed not to a large epitaxial surface energies, but to an elastic (dislocation free) relaxation of the mismatch strain (a _{InAs}=1.07cdot a_{GaAs}). I present a detailed study of the nucleation and growth of these InAs islands using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The islands are found to be lens-shaped, coherently-strained and remarkably uniform in their size. Embedding these 4 nm tall, 25 nm diameter InAs islands in GaAs confines injected carriers in three dimensions. The islands thus formed fulfill the requirements of a quantum dot (or box), which behave as "artificial atoms" whose allowed energy eigenstates are discrete. Quantum dots have been the "holy grail" for many scientists because of the advantages these discrete energy levels provide in electronic and optical devices, such as semiconductor lasers. Self-assembled quantum dots (SAQD), presented in this dissertation, surmount the fabrication difficulties typical for quantum dots, reducing efforts to more fundamental problems of size uniformity and control. SAQDs have distinct advantages over quantum dots formed with other methods. For instance, no processing is required before or after growth. In addition, layers of SAQDs can be easily integrated into GaAs/AlGaAs devices. Contrary to quantum dots formed with other techniques, a strong light emission is observed from the SAQD at ~1.2 eV. Further photoluminescence (PL) experiments reveal emission linewidths less than.5 meV from individual SAQD, but a ~50 meV linewidth from larger arrays due to small SAQD thickness fluctuations. PL excitation (PLE) spectra reveal a large shift between

  17. Hybrid passivated colloidal quantum dot solids

    NASA Astrophysics Data System (ADS)

    Ip, Alexander H.; Thon, Susanna M.; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H.

    2012-09-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.

  18. Hybrid passivated colloidal quantum dot solids.

    PubMed

    Ip, Alexander H; Thon, Susanna M; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R; Carey, Graham H; Fischer, Armin; Kemp, Kyle W; Kramer, Illan J; Ning, Zhijun; Labelle, André J; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H

    2012-09-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.

  19. Amphoteric CdSe nanocrystalline quantum dots.

    PubMed

    Islam, Mohammad A

    2008-06-25

    The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.

  20. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  1. Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David

    2007-01-01

    wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

  2. Quantum Dots: An Experiment for Physical or Materials Chemistry

    ERIC Educational Resources Information Center

    Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.

    2005-01-01

    An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.

  3. Lifetime blinking in nonblinking nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Galland, Christophe; Ghosh, Yagnaseni; Steinbrück, Andrea; Hollingsworth, Jennifer A.; Htoon, Han; Klimov, Victor I.

    2012-06-01

    Nanocrystal quantum dots are attractive materials for applications as nanoscale light sources. One impediment to these applications is fluctuations of single-dot emission intensity, known as blinking. Recent progress in colloidal synthesis has produced nonblinking nanocrystals; however, the physics underlying blinking suppression remains unclear. Here we find that ultra-thick-shell CdSe/CdS nanocrystals can exhibit pronounced fluctuations in the emission lifetimes (lifetime blinking), despite stable nonblinking emission intensity. We demonstrate that lifetime variations are due to switching between the neutral and negatively charged state of the nanocrystal. Negative charging results in faster radiative decay but does not appreciably change the overall emission intensity because of suppressed nonradiative Auger recombination for negative trions. The Auger process involving excitation of a hole (positive trion pathway) remains efficient and is responsible for charging with excess electrons, which occurs via Auger-assisted ionization of biexcitons accompanied by ejection of holes.

  4. Lifetime blinking in nonblinking nanocrystal quantum dots.

    PubMed

    Galland, Christophe; Ghosh, Yagnaseni; Steinbrück, Andrea; Hollingsworth, Jennifer A; Htoon, Han; Klimov, Victor I

    2012-06-19

    Nanocrystal quantum dots are attractive materials for applications as nanoscale light sources. One impediment to these applications is fluctuations of single-dot emission intensity, known as blinking. Recent progress in colloidal synthesis has produced nonblinking nanocrystals; however, the physics underlying blinking suppression remains unclear. Here we find that ultra-thick-shell CdSe/CdS nanocrystals can exhibit pronounced fluctuations in the emission lifetimes (lifetime blinking), despite stable nonblinking emission intensity. We demonstrate that lifetime variations are due to switching between the neutral and negatively charged state of the nanocrystal. Negative charging results in faster radiative decay but does not appreciably change the overall emission intensity because of suppressed nonradiative Auger recombination for negative trions. The Auger process involving excitation of a hole (positive trion pathway) remains efficient and is responsible for charging with excess electrons, which occurs via Auger-assisted ionization of biexcitons accompanied by ejection of holes.

  5. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-09-15

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180 Degree-Sign C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400-760 Degree-Sign C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600 Degree-Sign C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures.

  6. Nano-laser on silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li

    2011-04-01

    A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d < 3 nm) can make the localized states into band gap. The emission energy of nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.

  7. Photoluminescence Imaging of Focused Ion Beam Induced Individual Quantum Dots

    SciTech Connect

    Lee, Jieun; Saucer, Timothy W.; Martin, Andrew J.; Tien, Deborah; Millunchick, Joanna M.; Sih, Vanessa

    2011-02-08

    We report on scanning microphotoluminescence measurements that spectrally and spatially resolve emission from individual InAs quantum dots that were induced by focused ion beam patterning. Multilayers of quantum dots were spaced 2 μm apart, with a minimum single dot emission line width of 160 μeV, indicating good optical quality for dots patterned using this technique. Mapping 16 array sites, at least 65% were occupied by optically active dots and the spectral inhomogeneity was within 30 meV.

  8. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  9. Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins

    NASA Astrophysics Data System (ADS)

    Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou

    2016-07-01

    We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.

  10. Quantum Adiabatic Pumping by Modulating Tunnel Phase in Quantum Dots

    NASA Astrophysics Data System (ADS)

    Taguchi, Masahiko; Nakajima, Satoshi; Kubo, Toshihiro; Tokura, Yasuhiro

    2016-08-01

    In a mesoscopic system, under zero bias voltage, a finite charge is transferred by quantum adiabatic pumping by adiabatically and periodically changing two or more control parameters. We obtained expressions for the pumped charge for a ring of three quantum dots (QDs) by choosing the magnetic flux penetrating the ring as one of the control parameters. We found that the pumped charge shows a steplike behavior with respect to the variance of the flux. The value of the step heights is not universal but depends on the trajectory of the control parameters. We discuss the physical origin of this behavior on the basis of the Fano resonant condition of the ring.

  11. Power-law photoluminescence decay in quantum dots

    SciTech Connect

    Král, Karel; Menšík, Miroslav

    2014-05-15

    Some quantum dot samples show a long-time (power-law) behavior of their luminescence intensity decay. This effect has been recently explained as being due to a cooperation of many tunneling channels transferring electrons from small quantum dots with triplet exciton to quantum dots at which the electrons can recombine with the holes in the valence band states. In this work we show that the long-time character of the sample luminescence decay can also be caused by an intrinsic property of a single dot, namely, by a non-adiabatic effect of the electron occupation up-conversion caused by the electron-phonon multiple scattering mechanism.

  12. Terahertz hot electron bolometric detectors based on graphene quantum dots

    NASA Astrophysics Data System (ADS)

    El Fatimy, A.; Myers-Ward, R. L.; Boyd, A. K.; Daniels, K. M.; Gaskill, D. K.; Barbara, P.

    2015-03-01

    We study graphene quantum dots patterned from epitaxial graphene on SiC with a resistance strongly dependent on temperature. The combination of weak electron-phonon coupling and small electronic heat capacity in graphene makes these quantum dots ideal hot-electron bolometers. We measure and characterize the THz optical response of devices with different dot sizes, at operating temperatures from 2.5K to 80K. The high responsivity, the potential for operation above 80 K and the process scalability show great promise towards practical applications of graphene quantum dot THz detectors. This work was sponsored by the U.S. Office of Naval Research (Award Number N000141310865).

  13. Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

    SciTech Connect

    Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.

    2011-12-23

    The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

  14. Quantum dot loaded immunomicelles for tumor imaging

    PubMed Central

    2010-01-01

    Background Optical imaging is a promising method for the detection of tumors in animals, with speed and minimal invasiveness. We have previously developed a lipid coated quantum dot system that doubles the fluorescence of PEG-grafted quantum dots at half the dose. Here, we describe a tumor-targeted near infrared imaging agent composed of cancer-specific monoclonal anti-nucleosome antibody 2C5, coupled to quantum dot (QD)-containing polymeric micelles, prepared from a polyethylene glycol/phosphatidylethanolamine (PEG-PE) conjugate. Its production is simple and involves no special equipment. Its imaging potential is great since the fluorescence intensity in the tumor is twofold that of non-targeted QD-loaded PEG-PE micelles at one hour after injection. Methods Para-nitrophenol-containing (5%) PEG-PE quantum dot micelles were produced by the thin layer method. Following hydration, 2C5 antibody was attached to the PEG-PE micelles and the QD-micelles were purified using dialysis. 4T1 breast tumors were inoculated subcutaneously in the flank of the animals. A lung pseudometastatic B16F10 melanoma model was developed using tail vein injection. The contrast agents were injected via the tail vein and mice were depilated, anesthetized and imaged on a Kodak Image Station. Images were taken at one, two, and four hours and analyzed using a methodology that produces normalized signal-to-noise data. This allowed for the comparison between different subjects and time points. For the pseudometastatic model, lungs were removed and imaged ex vivo at one and twenty four hours. Results The contrast agent signal intensity at the tumor was double that of the passively targeted QD-micelles with equally fast and sharply contrasted images. With the side views of the animals only tumor is visible, while in the dorsal view internal organs including liver and kidney are visible. Ex vivo results demonstrated that the agent detects melanoma nodes in a lung pseudometastatic model after a 24 hours

  15. A hybrid silicon evanescent quantum dot laser

    NASA Astrophysics Data System (ADS)

    Jang, Bongyong; Tanabe, Katsuaki; Kako, Satoshi; Iwamoto, Satoshi; Tsuchizawa, Tai; Nishi, Hidetaka; Hatori, Nobuaki; Noguchi, Masataka; Nakamura, Takahiro; Takemasa, Keizo; Sugawara, Mitsuru; Arakawa, Yasuhiko

    2016-09-01

    We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred by direct wafer bonding onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors. The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T 0 of 303 K near room temperature. Furthermore, by reducing the width of the GaAs/AlGaAs mesa down to 8 µm, continuous-wave operation is realized at 25 °C.

  16. Charge-separated state in strain-induced quantum dots

    SciTech Connect

    Gu, Y.; Sturge, M.D.; Kash, K.; Watkins, N.; Van der Gaag, B.P.; Gozdz, A.S.; Florez, L.T.; Harbison, J.P.

    1997-03-01

    We have measured the time-resolved photoluminescence of strain-induced quantum dots. We show that a long-lived intermediate state is involved in the excitation transfer from the interstitial quantum well to the dot. This intermediate state has the properties expected of the charge separated state predicted by theory. {copyright} {ital 1997 American Institute of Physics.}

  17. Thermoelectric transport in strongly correlated quantum dot nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Yang, Ronggui

    2010-08-01

    We investigate the thermoelectric transport properties (electrical conductivity, Seebeck coefficient, power factor, and thermoelectric figure of merit) in strongly correlated quantum dot nanocomposites at low temperature (77 K) by using the dynamical mean-field theory and the Kubo formula. The periodic Anderson model is applied to describe the strongly correlated quantum dot nanocomposites with tunable parameters such as the size of quantum dots and the electron occupation number. The electron occupation number can be controlled by the doping concentration in the both matrix and quantum dots, the size of quantum dots, and the interdot spacing. These parameters control the transition between n -type like behavior (with negative Seebeck coefficient) and p -type like behavior (with positive Seebeck coefficient) of strongly correlated quantum dot nanocomposites. Large Seebeck coefficient up to 260μV/K due to the asymmetry of the electron bands with sharp electron density of states can be obtained in the strongly correlated quantum dot nanocomposites, along with moderate electrical conductivity values in the order of 105/Ωm . This results in optimal power factor about 78μW/cmK2 and optimal figure of merit (ZT) over 0.55 which is much larger than the value of the state-of-the-art low-temperature thermoelectric materials. This study shows that high efficiency thermoelectric materials at low temperature can be obtained in strongly correlated quantum dot nanocomposites.

  18. Fast synthesize ZnO quantum dots via ultrasonic method.

    PubMed

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots.

  19. A high quantum efficiency preserving approach to ligand exchange on lead sulfide quantum dots and interdot resonant energy transfer.

    PubMed

    Lingley, Zachary; Lu, Siyuan; Madhukar, Anupam

    2011-07-13

    We present a new approach to ligand exchange on lead sulfide (PbS) quantum dots (QDs) in which the QDs are reacted with preformed Pb cation-ligand exchange units designed to promote reactions that replace surface Pb and oleate groups on the as-grown QDs. This process introduces negligible surface defects as the high quantum efficiency (∼55%) of the as-grown QDs is maintained. Infrared spectroscopy and electron microscopy are used to confirm the replacement of ligands and time-resolved photoluminescence to demonstrate the expected inverse sixth power dependence of the nonradiative resonant energy transfer rate on inter-QD spacing.

  20. Hyper-parallel photonic quantum computation with coupled quantum dots.

    PubMed

    Ren, Bao-Cang; Deng, Fu-Guo

    2014-04-11

    It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF.

  1. Quantum dot blueing and blinking enables fluorescence nanoscopy.

    PubMed

    Hoyer, Patrick; Staudt, Thorsten; Engelhardt, Johann; Hell, Stefan W

    2011-01-12

    We demonstrate superresolution fluorescence imaging of cells using bioconjugated CdSe/ZnS quantum dot markers. Fluorescence blueing of quantum dot cores facilitates separation of blinking markers residing closer than the diffraction barrier. The high number of successively emitted photons enables ground state depletion microscopy followed by individual marker return with a resolving power of the size of a single dot (∼12 nm). Nanoscale imaging is feasible with a simple webcam.

  2. Quantum dots find their stride in single molecule tracking

    PubMed Central

    Bruchez, Marcel P.

    2011-01-01

    Thirteen years after the demonstration of quantum dots as biological imaging agents, and nine years after the initial commercial introduction of bioconjugated quantum dots, the brightness and photostability of the quantum dots has enabled a range of investigations using single molecule tracking. These materials are being routinely utilized by a number of groups to track the dynamics of single molecules in reconstituted biophysical systems and on living cells, and are especially powerful for investigations of single molecules over long timescales with short exposure times and high pointing accuracy. New approaches are emerging where the quantum dots are used as “hard-sphere” probes for intracellular compartments. Innovations in quantum dot surface modification are poised to substantially expand the utility of these materials. PMID:22055494

  3. Quantum Dots in Diagnostics and Detection: Principles and Paradigms

    PubMed Central

    Pisanic, T. R.; Zhang, Y.; Wang, T. H.

    2014-01-01

    Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection. PMID:24770716

  4. Non-blinking quantum dot with a plasmonic nanoshell resonator

    NASA Astrophysics Data System (ADS)

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  5. 3D super-resolution imaging with blinking quantum dots.

    PubMed

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R

    2013-11-13

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (fwhm) of 8-17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3-7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells.

  6. Non-blinking quantum dot with a plasmonic nanoshell resonator.

    PubMed

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  7. Germanium based electrostatic quantum dots: design and characterization.

    NASA Astrophysics Data System (ADS)

    Mazzeo, Giovanni; Yablonovitch, Eli; Jiang, Hong-Wen

    2010-03-01

    While the less mature Germanium technology requires an extra effort for the realization of single electron quantum dots, unique properties of Germanium rich heterostructures together with spin coherence times comparable to Silicon, can justify the development of such new technology. We report our progresses on the formation of electrostatic quantum dots in Germanium. We employ an MOS-like structure with no modulation doping already successfully proven in Silicon devices. A two level gate stack is used: the top gate is positively biased to attract electrons while the lowers gates are negatively biased to form the quantum dot and attract holes in a transistor channel, used to detect the electrons in the adjacent quantum dot. Finite Element Method simulations are used to prove the concept of this hybrid holes-transistor/electron-QD device and estimate the sensitivity of the charge detection. Preliminary characterizations of quantum dot devices built with this structure are reported.

  8. Numerical simulation of optical feedback on a quantum dot lasers

    SciTech Connect

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  9. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  10. Silicon quantum dots for biological applications.

    PubMed

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.

  11. In Vivo Imaging of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Texier, Isabelle; Josser, Véronique

    Noninvasive whole-body near-infrared fluorescence imaging is now acknowledged as a powerful method for the molecular mapping of biological events in live small animals such as mouse models. With outstanding optical properties such as high fluorescence quantum yields and low photobleaching rates, quantum dots (QDs) are labels of choice in the near-infrared domain. The main applications described in the literature for in vivo imaging of mice after injection of QDs encompass imaging of lymph nodes and tumors and cell tracking. Standard methods for the preparation, the purification, and the in vivo fluorescence whole-body imaging of QDs in the live mouse are described. Nanoparticles coated by PEG chains of different sizes and terminal groups are prepared using 705-nm-emitting commercial QDs. Their biodistribution after intravenous or intradermal injections in tumor-bearing mice is reported here.

  12. Semiconductor quantum dot-sensitized solar cells.

    PubMed

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  13. Tunneling rate in double quantum dots

    NASA Astrophysics Data System (ADS)

    Filikhin, Igor; Matinyan, Sergei; Vlahovic, Branislav

    2014-03-01

    We study spectral properties of electron tunneling in double quantum dots (DQDs) (and double quantum wells (DQWs)) and their relation to the geometry. In particular we compare the tunneling in DQW with chaotic and regular geometry, taking into account recent evidence about regularization of the tunneling rate when the QW geometry is chaotic. Our calculations do not support this assumption. We confirm high influence of the QW geometry boundaries on the rate fluctuation along the spectrum. The factors of the effective mass anisotropy and violation of the symmetry of DQD and DQW are also considered. Generally, we found that the small violation of the symmetry drastically affects tunneling. This work is supported by the NSF (HRD-0833184) and NASA (NNX09AV07A).

  14. Semiconductor quantum dot-sensitized solar cells

    PubMed Central

    Tian, Jianjun; Cao, Guozhong

    2013-01-01

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178

  15. Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

    PubMed

    Wen, Lei; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

    2016-08-01

    The growth process of InAs quantum dots grown on GaAs (511)A substrates has been studied by atomic force microscopy. According to the atomic force microscopy studies for quantum dots grown with varying InAs coverage, a noncoherent nucleation of quantum dots is observed. Moreover, due to the long migration length of In atoms, the Ostwald ripening process is aggravated, resulting in the bad uniformity of InAs quantum dots on GaAs (511)A. In order to improve the uniformity of nucleation, the growth rate is increased. By studying the effects of increased growth rates on the growth of InAs quantum dots, it is found that the uniformity of InAs quantum dots is greatly improved as the growth rates increase to 0.14 ML s(-1) . However, as the growth rates increase further, the uniformity of InAs quantum dots becomes dual-mode, which can be attributed to the competition between Ostwald ripening and strain relaxation processes. The results in this work provide insights regarding the competition between thermal dynamical barriers and the growth kinetics in the growth of InAs quantum dots, and give guidance to improve the size uniformity of InAs quantum dots on (N11)A substrates.

  16. Quantum-dot optical temperature probes

    NASA Astrophysics Data System (ADS)

    Walker, Glen W.; Sundar, Vikram C.; Rudzinski, Christina M.; Wun, Aetna W.; Bawendi, Moungi G.; Nocera, Daniel G.

    2003-10-01

    The steady-state photoluminescence (PL) properties of cadmium selenide quantum dots (QDs) with a zinc sulfide overlayer [(CdSe)ZnS] can be strongly dependent on temperature in the range from 100 to 315 K. The PL intensity from 50 to 55 Å (CdSe)ZnS QDs in poly(lauryl methacrylate) matrices increases by a factor of ˜5 when the temperature is decreased from 315 to 100 K, and the peak of the emission band is blueshifted by 20 nm over the same range. The change in PL intensity is appreciable, linear, and reversible (-1.3% per °C) for temperatures close to ambient conditions. These properties of (CdSe)ZnS dots are retained in a variety of matrices including polymer and sol-gel films, and they are independent of excitation wavelength above the band gap. The significant temperature dependence of the luminescence combined with its insensitivity to oxygen quenching establishes (CdSe)ZnS dots as optical temperature indicators for temperature-sensitive coatings.

  17. Magnetotransport in Ge/Si Quantum Dot Molecules Fabricated by Directed Self-Assembly

    NASA Astrophysics Data System (ADS)

    Yang, Dongyue; Petz, Chris; Levy, Jeremy; Floro, Jerrold

    2012-02-01

    The electronic states of strained self-assembled Ge quantum dots embedded in silicon provide an attractive system for controlling electron spin interactions via direct exchangeootnotetextC. E. Pryor, M. E. Flatte, and J. Levy, Applied Physics Letter 95, 232103 (2009) . Directed self-assembly of sub-10 nm Ge islands are fabricated to produce laterally coupled quantum dot molecules with geometrically-defined spin exchange couplings. Ge islands are coupled to the Si capping layer, and geometries can be defined that are suitable for either vertical or lateral transport. We describe low-temperature vertical magneto-transport measurements on individual and small arrays of Ge islands grown on SOI substrate. Characteristic features in the magnetotransport are observed that correspond to specific geometrical arrangements of the quantum dots.

  18. A high-temperature single-photon source from nanowire quantum dots.

    PubMed

    Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

    2008-12-01

    We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

  19. Engineering quantum dots for electrical control of the fine structure splitting

    NASA Astrophysics Data System (ADS)

    Pooley, M. A.; Bennett, A. J.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

    2013-07-01

    We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample, we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths, and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift, and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.

  20. Spectroscopy of excitonic Zeeman levels in single quantum dots

    NASA Astrophysics Data System (ADS)

    Schaller, A.; Zrenner, A.; Abstreiter, G.; Böhm, G.

    1998-07-01

    Fully confined excitons are investigated in natural quantum dots, which are formed by well-width fluctuations in GaAs/AlAs coupled quantum-well structures. In magnetooptic experiments a population inversion of the Zeeman split levels in the quantum dots is found under the condition of charge injection from the AlAs X-point state. This new phenomenon is explained in terms of spin thermalization in the intermediate indirect exciton state and subsequent tunnelling into the direct quantum-dot state. Population inversion is thereby caused by the associated sign reversal of the effective exciton g-factor.

  1. Quantum Dot Enabled Molecular Sensing and Diagnostics

    PubMed Central

    Zhang, Yi; Wang, Tza-Huei

    2012-01-01

    Since its emergence, semiconductor nanoparticles known as quantum dots (QDs) have drawn considerable attention and have quickly extended their applicability to numerous fields within the life sciences. This is largely due to their unique optical properties such as high brightness and narrow emission band as well as other advantages over traditional organic fluorophores. New molecular sensing strategies based on QDs have been developed in pursuit of high sensitivity, high throughput, and multiplexing capabilities. For traditional biological applications, QDs have already begun to replace traditional organic fluorophores to serve as simple fluorescent reporters in immunoassays, microarrays, fluorescent imaging applications, and other assay platforms. In addition, smarter, more advanced QD probes such as quantum dot fluorescence resonance energy transfer (QD-FRET) sensors, quenching sensors, and barcoding systems are paving the way for highly-sensitive genetic and epigenetic detection of diseases, multiplexed identification of infectious pathogens, and tracking of intracellular drug and gene delivery. When combined with microfluidics and confocal fluorescence spectroscopy, the detection limit is further enhanced to single molecule level. Recently, investigations have revealed that QDs participate in series of new phenomena and exhibit interesting non-photoluminescent properties. Some of these new findings are now being incorporated into novel assays for gene copy number variation (CNV) studies and DNA methylation analysis with improved quantification resolution. Herein, we provide a comprehensive review on the latest developments of QD based molecular diagnostic platforms in which QD plays a versatile and essential role. PMID:22916072

  2. Competing interactions in semiconductor quantum dots

    SciTech Connect

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  3. Competing interactions in semiconductor quantum dots

    DOE PAGESBeta

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

  4. Colloidal quantum dot light-emitting devices

    PubMed Central

    Wood, Vanessa; Bulović, Vladimir

    2010-01-01

    Colloidal quantum dot light-emitting devices (QD-LEDs) have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI). We review the key advantages of using quantum dots (QDs) in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs - optical excitation, Förster energy transfer, and direct charge injection - that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt). We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs. PMID:22110863

  5. Using quantum dot photoluminescence for load detection

    NASA Astrophysics Data System (ADS)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  6. Lifetime Blinking in Non Blinking Quantum Dots

    NASA Astrophysics Data System (ADS)

    Klimov, Victor; Ghosh, Yagnaseni; Steinbrueck, Andrea; Hollingsworth, Jennifer; Htoon, Han; Galland, Christophe

    2012-02-01

    Photoluminescence (PL) blinking is a common property of nanoscale light emitters. Nanocrystal quantum dots have often been used as model systems in studies of this intriguing phenomenon. Here, we use recently developed thick-shell CdSe/CdS NQDs to demonstrate a new regime of blinking where discrete fluctuations in the PL lifetime (``lifetime blinking'') occur without appreciable changes in the PL intensity. Single-dot measurements under controlled electrochemical charge injection [1] yield the PL lifetimes of neutral and charged excitons. We show that the observed ``lifetime blinking'' are due to random charging/discharging of the nanocrystal [2]. Indeed, the injection of electrons does not appreciably modify the PL quantum yield, which explains the coexistence of a nonblinking intensity with a ``blinking'' lifetime. At higher excitation power, charged excitons dominate the PL emission. We build a quantitative model showing that nanocrystal charging is caused by Auger-assisted ejection of a hole, producing negatively charged species. Importantly, Auger recombination that involves excitation of an electron is suppressed while hole-based processes remain efficient.[4pt] [1] Galland et al., Nature 479, 203-207 (2011)[0pt] [2] Galland et al., Submitted (2011)

  7. Fourier transform spectra of quantum dots

    NASA Astrophysics Data System (ADS)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2010-05-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  8. Fourier transform spectra of quantum dots

    NASA Astrophysics Data System (ADS)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2009-09-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  9. Study of metallothionein-quantum dots interactions.

    PubMed

    Tmejova, Katerina; Hynek, David; Kopel, Pavel; Krizkova, Sona; Blazkova, Iva; Trnkova, Libuse; Adam, Vojtech; Kizek, Rene

    2014-05-01

    Nanoparticles have gained increasing interest in medical and in vivo applications. Metallothionein (MT) is well known as a maintainer of metal ions balance in intracellular space. This is due to high affinity of this protein to any reactive species including metals and reactive oxygen species. The purpose of this study was to determine the metallothionein-quantum dots interactions that were investigated by spectral and electrochemical techniques. CuS, CdS, PbS, and CdTe quantum dots (QDs) were analysed. The highest intensity was shown for CdTe, than for CdS measured by fluorescence. These results were supported by statistical analysis and considered as significant. Further, these interactions were analysed using gel electrophoresis, where MT aggregates forming after interactions with QDs were detected. Using differential pulse voltammetry Brdicka reaction, QDs and MT were studied. This method allowed us to confirm spectral results and, moreover, to observe the changes in MT structure causing new voltammetric peaks called X and Y, which enhanced with the prolonged time of interaction up to 6 h.

  10. High performance tunnel injection quantum dot comb laser

    SciTech Connect

    Lee, C.-S.; Guo Wei; Basu, Debashish; Bhattacharya, Pallab

    2010-03-08

    A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (DELTA{sub -15dB}) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum channel intensity nonuniformity of less than 3 dB in the spectral range of 1231-1252 nm and 1274-1311 nm, respectively, for a laser with 1040 mum cavity length. The channel spacing can be tuned with cavity length and remains invariant in the temperature range of 300-323 K. The small signal modulation bandwidth is 7.5 GHz.

  11. Ultra-low density InAs quantum dots

    SciTech Connect

    Dubrovskii, V. G. Cirlin, G. E.; Brunkov, P. A.; Perimetti, U.; Akopyan, N.

    2013-10-15

    We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10{sup 7} cm{sup -2} without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3-1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10{sup 7}-10{sup 8} cm{sup -2}, exhibiting bright photoluminescence.

  12. Optical properties of individual site-controlled Ge quantum dots

    SciTech Connect

    Grydlik, Martyna E-mail: martyna.grydlik@jku.at; Brehm, Moritz E-mail: martyna.grydlik@jku.at; Tayagaki, Takeshi; Langer, Gregor; Schäffler, Friedrich; Schmidt, Oliver G.

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  13. Lasing from Glassy Ge Quantum Dots in Crystalline Si

    PubMed Central

    2016-01-01

    Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor optoelectronic properties of bulk Si and Ge. Here we demonstrate that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB). In contrast to conventional SiGe nanostructures, these QDs exhibit dramatically shortened carrier lifetimes and negligible thermal quenching of the photoluminescence (PL) up to room temperature. Microdisk resonators with embedded GIB-QDs exhibit threshold behavior as well as a superlinear increase of the integrated PL intensity with concomitant line width narrowing as the pump power increases. These findings demonstrate light amplification by stimulated emission in a fully SIT-compatible group IV nanosystem. PMID:26937421

  14. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot.

    PubMed

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal; Patriarche, Gilles; Harmand, Jean-Christophe; Akopian, Nika; Zwiller, Val

    2016-02-10

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width. We notice that the emission spectra consist often of two peaks close in energy, which we explain with a comprehensive theory showing that the symmetry of the system plays a crucial role for the hole levels forming hybridized orbitals. Our results state that crystal phase quantum dots have promising quantum optical properties for single photon application and quantum optics. PMID:26806321

  15. Charge-extraction strategies for colloidal quantum dot photovoltaics.

    PubMed

    Lan, Xinzheng; Masala, Silvia; Sargent, Edward H

    2014-03-01

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p- and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction.

  16. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    NASA Technical Reports Server (NTRS)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  17. Spin transport measurements in gallium arsenide quantum dots

    NASA Astrophysics Data System (ADS)

    Folk, Joshua Alexander

    This thesis presents a series of measurements investigating the spin physics of lateral quantum dots, defined electrostatically in the 2-D electron gas at the interface of a GaAs/AlGaAs heterostructure. The experiments span a range from open dots, where the leads of the dot carry at least one fully transmitting mode, to closed dots, where the leads are set to be tunnel barriers. For open dots, spin physics is inferred from measurements of conductance fluctuations; the effects of spin degeneracy in the orbital levels as well as a spin-orbit interaction are observed. In the closed dot measurements, ground state spin transitions as electrons are added to the dot may be determined from the motion of Coulomb blockade peaks in an in-plane magnetic field. In addition, this thesis demonstrates for the first time a direct measurement of the spin polarization of current emitted from a quantum dot, or a quantum point contact, during transport. These experiments make use of a spin-sensitive focusing geometry in which a quantum point contact serves as a spin analyzer for the mesoscopic device under test. Measurements are presented both in the open dot regime, where good agreement with theory is found, as well as the closed dot regime, where the data defies a simple theoretical explanation.

  18. Red to green photoluminescence of InP-quantum dots in AlxGa1-xInP

    NASA Astrophysics Data System (ADS)

    Roßbach, R.; Schulz, W. M.; Reischle, M.; Beirne, G. J.; Jetter, M.; Michler, P.

    2007-01-01

    InP-quantum dots were grown in between different Al-containing AlxGa1-xInP barriers in order to increase their emission energy and localization energy. We observed emission energies from 1.85 eV (670 nm) to 2.24 eV (554 nm). From time-resolved photoluminescence measurements performed at different temperatures we found a strong dependence of the excitonic decay times both on the Al-content of the barrier and the growth temperature of the quantum dots due to diffusion of Al and Ga from the barrier into the dots.

  19. Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots

    SciTech Connect

    Chang, Y. C.; Robson, A. J.; Harrison, S.; Zhuang, Q. D.; Hayne, M.

    2015-06-15

    We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

  20. Hybrid Circuit QED with Double Quantum Dots

    NASA Astrophysics Data System (ADS)

    Petta, Jason

    2014-03-01

    Cavity quantum electrodynamics explores quantum optics at the most basic level of a single photon interacting with a single atom. We have been able to explore cavity QED in a condensed matter system by placing a double quantum dot (DQD) inside of a high quality factor microwave cavity. Our results show that measurements of the cavity field are sensitive to charge and spin dynamics in the DQD.[2,3] We can explore non-equilibrium physics by applying a finite source-drain bias across the DQD, which results in sequential tunneling. Remarkably, we observe a gain as large as 15 in the cavity transmission when the DQD energy level detuning is matched to the cavity frequency. These results will be discussed in the context of single atom lasing.[4] I will also describe recent progress towards reaching the strong-coupling limit in cavity-coupled Si DQDs. In collaboration with Manas Kulkarni, Yinyu Liu, Karl Petersson, George Stehlik, Jacob Taylor, and Hakan Tureci. We acknowledge support from the Sloan and Packard Foundations, ARO, DARPA, and NSF.

  1. Gate-controlled electromechanical backaction induced by a quantum dot

    PubMed Central

    Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

    2016-01-01

    Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter. PMID:27063939

  2. The transfer matrix approach to circular graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Chau Nguyen, H.; Nguyen, Nhung T. T.; Nguyen, V. Lien

    2016-07-01

    We adapt the transfer matrix (T-matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. Similar to one-dimensional problems, we show that the generalized T-matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the T-matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons.

  3. A Novel Particle Detector: Quantum Dot Doped Liquid Scintillator

    NASA Astrophysics Data System (ADS)

    Winslow, Lindley; Conrad, Janet; Jerry, Ruel

    2010-02-01

    Quantum dots are semiconducting nanocrystals. When excited by light shorter then their characteristic wavelength, they re-emit in a narrow band around this wavelength. The size of the quantum is proportional to the characteristic wavelength so they can be tuned for many applications. CdS quantum dots are made in wavelengths from 360nm to 460nm, a perfect range for the sensitivity of photo-multiplier tubes. The synthesis of quantum dots automatically leaves them in toluene, a good organic scintillator and Cd is a particularly interesting material as it has one of the highest thermal neutron cross sections and has several neutrinoless double beta decay and double electron capture isotopes. The performance of quantum dot loaded scintillator compared to standard scintillators is measured and some unique properties presented. )

  4. Gate-controlled electromechanical backaction induced by a quantum dot.

    PubMed

    Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

    2016-04-11

    Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

  5. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  6. Full counting statistics of quantum dot resonance fluorescence.

    PubMed

    Matthiesen, Clemens; Stanley, Megan J; Hugues, Maxime; Clarke, Edmund; Atatüre, Mete

    2014-01-01

    The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097

  7. Quantum dot mode locked lasers for coherent frequency comb generation

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Calò, C.; Rosales, R.; Watts, R. T.; Merghem, K.; Accard, A.; Lelarge, F.; Barry, L. P.; Ramdane, A.

    2013-12-01

    Monolithic semiconductor passively mode locked lasers (MLL) are very attractive components for many applications including high bit rate telecommunications, microwave photonics and instrumentation. Owing to the three dimensional confinement of the charge carriers, quantum dot based mode-locked lasers have been the subject of intense investigations because of their improved performance compared to conventional material systems. Indeed, the inhomogeneous gain broadening and the ultrafast absorption recovery dynamics are an asset for short pulse generation. Moreover, the weak coupling of amplified spontaneous emission with the guided modes plus low loss waveguide leads to low timing jitter. Our work concentrates on InAs quantum dash nanostructures grown on InP substrate, intended for applications in the 1.55 μm telecom window. InAs/InP quantum dash based lasers, in particular, have demonstrated efficient mode locking in single section Fabry-Perot configurations. The flat optical spectrum of about 12 nm, combined with the narrow RF beat note linewidth of about 10 kHz make them a promising technology for optical frequency comb generation. Coherence between spectral modes was assessed by means of spectral phase measurements. The parabolic spectral phase profile indicates that short pulses can be obtained provided the intracavity dispersion can be compensated by inserting a single mode fiber.

  8. Atomic scale investigations on Cd{sub x}Zn{sub 1−x}Se quantum dots: Correlation between the composition and emission properties

    SciTech Connect

    Benallali, H. Hoummada, K.; Mangelinck, D.; Cremel, T.; André, R.; Tatarenko, S.; Kheng, K.

    2014-08-04

    Atom probe tomography and photoluminescence spectroscopy have been used to study Cd{sub x}Zn{sub 1−x}Se quantum dots embedded in a ZnSe layer grown on a (001) GaAs substrate. Atom probe tomography analyses show significant cadmium incorporation in the center of the dots surrounded by poor cadmium region. These measurements illustrate that the maximum cadmium concentration in the quantum dots is significantly higher than the concentration estimated by transmission electron microscopy. The composition and size of quantum dots obtained by atom probe tomography have been used to calculate the transition energies including excitonic and strain effects.

  9. PREFACE: Quantum dots as probes in biology

    NASA Astrophysics Data System (ADS)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  10. Nuclear spin physics in quantum dots: An optical investigation

    NASA Astrophysics Data System (ADS)

    Urbaszek, Bernhard; Marie, Xavier; Amand, Thierry; Krebs, Olivier; Voisin, Paul; Maletinsky, Patrick; Högele, Alexander; Imamoglu, Atac

    2013-01-01

    The mesoscopic spin system formed by the 104-106 nuclear spins in a semiconductor quantum dot offers a unique setting for the study of many-body spin physics in the condensed matter. The dynamics of this system and its coupling to electron spins is fundamentally different from its bulk counterpart or the case of individual atoms due to increased fluctuations that result from reduced dimensions. In recent years, the interest in studying quantum-dot nuclear spin systems and their coupling to confined electron spins has been further fueled by its importance for possible quantum information processing applications. The fascinating nonlinear (quantum) dynamics of the coupled electron-nuclear spin system is universal in quantum dot optics and transport. In this article, experimental work performed over the last decade in studying this mesoscopic, coupled electron-nuclear spin system is reviewed. Here a special focus is on how optical addressing of electron spins can be exploited to manipulate and read out the quantum-dot nuclei. Particularly exciting recent developments in applying optical techniques to efficiently establish nonzero mean nuclear spin polarizations and using them to reduce intrinsic nuclear spin fluctuations are discussed. Both results critically influence the preservation of electron-spin coherence in quantum dots. This overall recently gained understanding of the quantum-dot nuclear spin system could enable exciting new research avenues such as experimental observations of spontaneous spin ordering or nonclassical behavior of the nuclear spin bath.

  11. Energy levels in self-assembled quantum arbitrarily shaped dots.

    PubMed

    Tablero, C

    2005-02-01

    A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot. PMID:15740390

  12. Imaging a single quantum dot when it is dark.

    PubMed

    Kukura, P; Celebrano, M; Renn, A; Sandoghdar, V

    2009-03-01

    We have succeeded in recording extinction images of individual cadmium selenide quantum dots at ambient condition. This is achieved by optimizing the interference between the light that is coherently scattered from the quantum dot and the reflection of the incident laser beam. The ability to interrogate the dot in the absence of fluorescence has revealed that its extinction cross section diminishes in the photobleached state, but interestingly, it remains unchanged during fluorescence blinking off times. Our methodology makes optical imaging and spectroscopy accessible to the study of ultrasmall nanoscopic objects such as nonfluorescent macromolecules and single emitters with very low quantum efficiencies.

  13. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    NASA Technical Reports Server (NTRS)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  14. Kondo effects in triangular triple quantum dots

    NASA Astrophysics Data System (ADS)

    Oguri, Akira; Numata, Takahide; Nisikawa, Yunori; Hewson, A. C.

    2009-03-01

    We study the conductance through a triangular triple quantum dot, which is connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occur[1]. We will also discuss effects of deformations of the triangular configuration, caused by the inhomogeneity in the inter-dot couplings and in the gate voltages. [4pt] [1] T.Numata, Y.Nisikawa, A.Oguri, and A.C.Hewson: arXiv:0808.3496.

  15. Interaction matrix element fluctuations in quantum dots

    SciTech Connect

    Kaplan, L.; Alhassid, Y.

    2008-04-04

    In the Coulomb blockade regime of a ballistic quantum dot, the distribution of conductance peak spacings is well known to be incorrectly predicted by a single-particle picture; instead, matrix element fluctuations of the residual electronic interaction need to be taken into account. In the normalized random-wave model, valid in the semiclassical limit where the number of electrons in the dot becomes large, we obtain analytic expressions for the fluctuations of two-body and one-body matrix elements. However, these fluctuations may be too small to explain low-temperature experimental data. We have examined matrix element fluctuations in realistic chaotic geometries, and shown that at energies of experimental interest these fluctuations generically exceed by a factor of about 3-4 the predictions of the random wave model. Even larger fluctuations occur in geometries with a mixed chaotic-regular phase space. These results may allow for much better agreement between the Hartree-Fock picture and experiment. Among other findings, we show that the distribution of interaction matrix elements is strongly non-Gaussian in the parameter range of experimental interest, even in the random wave model. We also find that the enhanced fluctuations in realistic geometries cannot be computed using a leading-order semiclassical approach, but may be understood in terms of short-time dynamics.

  16. Wet electron microscopy with quantum dots.

    PubMed

    Timp, Winston; Watson, Nicki; Sabban, Alon; Zik, Ory; Matsudaira, Paul

    2006-09-01

    Wet electron microscopy (EM) is a new imaging method with the potential to allow higher spatial resolution of samples. In contrast to most EM methods, it requires little time to perform and does not require complicated equipment or difficult steps. We used this method on a common murine macrophage cell line, IC-21, in combination with various stains and preparations, to collect high resolution images of the actin cytoskeleton. Most importantly, we demonstrated the use of quantum dots in conjunction with this technique to perform light/electron correlation microscopy. We found that wet EM is a useful tool that fits into a niche between the simplicity of light microscopy and the high spatial resolution of EM. PMID:16989089

  17. Phonon Overlaps in Molecular Quantum Dot Systems

    NASA Astrophysics Data System (ADS)

    Chang, Connie; Sethna, James

    2004-03-01

    We model the amplitudes and frequencies of the vibrational sidebands for the new molecular quantum dot systems. We calculate the Franck-Condon phonon overlaps in the 3N-dimensional configuration sapce. We solve the general case where the vibrational frequencies and eigenmodes change during the transition. We perform PM3 and DFT calculations for the case of the dumb bell-shaped C140 molecule. We find that the strongest amplitudes are associated with the 11 meV stretch mode, in agreement with experiment. The experimental amplitudes vary from molecule to molecule; indicating that the molecular overlaps are environment dependent. We explore overlaps in the presence of external electric fields from image charges and counter ions.

  18. Spectral Properties of Multiply Charged Quantum Dots

    SciTech Connect

    Yalcin, Sibel Ebru; Labastide, Joelle A.; Sowle, Danielle L.; Barnes, Michael D.

    2011-10-12

    Spectrally resolved fluorescence imaging of single CdSe/ZnS quantum dots (QDs), charged by electrospray deposition under negative bias has revealed a surprising net blue shift (~60 meV peak-to-peak) in the distribution of center frequencies in QD band-edge luminescence. Electrostatic force microscopy (EFM) on the electrospray QD samples showed a subpopulation of charged QDs with 4.7 ± 0.7 excess electrons, as well as a significant fraction of uncharged QDs as evidenced by the distinct cantilever response under bias. We show that the blue-shifted peak recombination energy can be understood as a first-order electronic perturbation that affects the band-edge electron- and hole-states differently. These studies provide new insight into the role of electronic perturbations of QD luminescence by excess charges.

  19. Wet electron microscopy with quantum dots.

    PubMed

    Timp, Winston; Watson, Nicki; Sabban, Alon; Zik, Ory; Matsudaira, Paul

    2006-09-01

    Wet electron microscopy (EM) is a new imaging method with the potential to allow higher spatial resolution of samples. In contrast to most EM methods, it requires little time to perform and does not require complicated equipment or difficult steps. We used this method on a common murine macrophage cell line, IC-21, in combination with various stains and preparations, to collect high resolution images of the actin cytoskeleton. Most importantly, we demonstrated the use of quantum dots in conjunction with this technique to perform light/electron correlation microscopy. We found that wet EM is a useful tool that fits into a niche between the simplicity of light microscopy and the high spatial resolution of EM.

  20. Building devices from colloidal quantum dots.

    PubMed

    Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

    2016-08-26

    The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. PMID:27563099

  1. Quantum dots as a possible oxygen sensor

    NASA Astrophysics Data System (ADS)

    Ziółczyk, Paulina; Kur-Kowalska, Katarzyna; Przybyt, Małgorzata; Miller, Ewa

    Results of studies on optical properties of low toxicity quantum dots (QDs) obtained from copper doped zinc sulfate are discussed in the paper. The effect of copper admixture concentration and solution pH on the fluorescence emission intensity of QDs was investigated. Quenching of QDs fluorescence by oxygen was reported and removal of the oxygen from the environment by two methods was described. In the chemical method oxygen was eliminated by adding sodium sulfite, in the other method oxygen was removed from the solution using nitrogen gas. For elimination of oxygen by purging the solution with nitrogen the increase of fluorescence intensity with decreasing oxygen concentration obeyed Stern-Volmer equation indicating quenching. For the chemical method Stern-Volmer equation was not fulfilled. The fluorescence decays lifetimes were determined and the increase of mean lifetimes at the absence of oxygen support hypothesis that QDs fluorescence is quenched by oxygen.

  2. Two-dimensional probe absorption in coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Ningwu; Zhang, Yan; Kang, Chengxian; Wang, Zhiping; Yu, Benli

    2016-07-01

    We investigate the two-dimensional (2D) probe absorption in coupled quantum dots. It is found that, due to the position-dependent quantum interference effect, the 2D optical absorption spectrum can be easily controlled via adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state quantum communication.

  3. Competitive hybridization in quantum dot-based nanodevices

    NASA Astrophysics Data System (ADS)

    Beltako, Katawoura; Cavassilas, Nicolas; Michelini, Fabienne

    2016-03-01

    By means of nonequilibrium Green's functions using the Born approximation to treat the light-matter coupling, we numerically investigate impacts of competitive hybridization on the photocurrent of a quantum dot based optoelectronic device. The model of device is an absorbing quantum dot connected to two semiconducting electrodes through energy filtering quantum dots. Hybridization occurs between the absorber and the filter, via the inter-dot coupling β, and between the filter and the electrode, via the dot-lead coupling Γ. At the tunnel resonance between the absorber and the filter, the investigation reveals the existence of two operating regimes in the nanodevice characterized by opposite variations of the photocurrent depending on ratio β/ Γ.

  4. Investigation of size dependent structural and optical properties of thin films of CdSe quantum dots

    SciTech Connect

    Sharma, Madhulika; Sharma, A.B.; Mishra, N.; Pandey, R.K.

    2011-03-15

    Research highlights: {yields} CdSe q-dots have been synthesized using simple chemical synthesis route. {yields} Thin film of CdSe quantum dots exhibited self-organized growth. {yields} Size dependent blue shift observed in the absorption edge of CdSe nanocrystallites. {yields} PL emission band corresponds to band edge luminescence and defect luminescence. {yields} Organized growth led to enhancement in luminescence yield of smaller size Q-dots. -- Abstract: Cadmium selenide (CdSe) quantum dots were grown on indium tin oxide substrate using wet chemical technique for possible application as light emitting devices. The structural, morphological and luminescence properties of the as deposited thin films of CdSe Q-dot have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. The quantum dots have been shown to deposit in an organized array on ITO/glass substrate. The as grown Q-dots exhibited size dependent blue shift in the absorption edge. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the nanocrystalline CdSe exhibits intense photoluminescence as compared to the large grained polycrystalline CdSe films.

  5. Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots

    NASA Astrophysics Data System (ADS)

    Altaisky, Mikhail V.; Zolnikova, Nadezhda N.; Kaputkina, Natalia E.; Krylov, Victor A.; Lozovik, Yurii E.; Dattani, Nikesh S.

    2016-02-01

    We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.

  6. Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.

    PubMed

    Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A

    2011-09-25

    Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.

  7. Photoluminescence polarization of single InP quantum dots

    SciTech Connect

    Zwiller, Valery; Jarlskog, Linda; Pistol, Mats-Erik; Pryor, Craig; Castrillo, Pedro; Seifert, Werner; Samuelson, Lars

    2001-06-15

    The linear polarization dependence of photoluminescence emission was measured on single self-assembled InP quantum dots. The dots were obtained by Stranski-Krastanow growth on Ga{sub 0.5}In{sub 0.5}P. The highest-intensity emission occurred for light polarized parallel to the elongation of the dots in agreement with theoretical calculations. The excitation intensity was varied to obtain the polarization dependence of higher (state-filled) levels.

  8. Connecting trapped ions and quantum dots with photons

    NASA Astrophysics Data System (ADS)

    Koehl, Michael

    Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of an Yb+ ion. We ameliorate the effect of the sixty-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σz projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum state-transfer in a hybrid photonic network.

  9. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  10. Direct growth of CdSe semiconductor quantum dots in glass matrix by femtosecond laser beam

    NASA Astrophysics Data System (ADS)

    Bell, G.; Filin, A. I.; Romanov, D. A.; Levis, R. J.

    2016-02-01

    Controllable, spatially inhomogeneous distributions of CdSe nanocrystals smaller than the exciton Bohr radius are grown in a glass matrix under combined action of sample heating (below the transformation temperature) and focused high-repetition femtosecond (fs) laser beam. Selective quantum dot precipitation is evidenced by position-dependent absorption and Raman spectra. The particle size is estimated as r = 2.1 ± 0.3 nm by comparing the measured absorption and Raman spectra with those obtained from the samples grown in glass by traditional heat-treatment procedure. Direct growth of CdSe quantum dots in glass is enabled by nonlinear excitation using a focused fs duration laser beam (as differentiated from other methods), and this opens an avenue for adjustable selective growth patterns.

  11. Optical nuclear spin polarization in quantum dots

    NASA Astrophysics Data System (ADS)

    Li, Ai-Xian; Duan, Su-Qing; Zhang, Wei

    2016-10-01

    Hyperfine interaction between electron spin and randomly oriented nuclear spins is a key issue of electron coherence for quantum information/computation. We propose an efficient way to establish high polarization of nuclear spins and reduce the intrinsic nuclear spin fluctuations. Here, we polarize the nuclear spins in semiconductor quantum dot (QD) by the coherent population trapping (CPT) and the electric dipole spin resonance (EDSR) induced by optical fields and ac electric fields. By tuning the optical fields, we can obtain a powerful cooling background based on CPT for nuclear spin polarization. The EDSR can enhance the spin flip-flop rate which may increase the cooling efficiency. With the help of CPT and EDSR, an enhancement of 1300 times of the electron coherence time can be obtained after a 10-ns preparation time. Project partially supported by the National Natural Science Foundations of China (Grant Nos. 11374039 and 11174042) and the National Basic Research Program of China (Grant Nos. 2011CB922204 and 2013CB632805).

  12. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  13. Probing specific DNA sequences with luminescent semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Taylor, Jason R.; Nie, Shuming

    2001-06-01

    The development of new fluorescent probes has impacted many areas of research such as medical diagnostics, high-speed drug screening, and basic molecular biology. Main limitations to traditional organic fluorophores are their relatively weak intensities, short life times (eg., photobleaching), and broad emission spectra. The desire for more intense fluorescent probes with higher quality photostability and narrow emission wavelengths has led to the development and utilization of semiconductor quantum dots as a new label. In this work, we have modified semicondutor quantum dots (QD's) with synthetic oligonucleotides to probe a specific DNA target sequence both in solution as well as immobilized on a solid substrate. In the first approach, specific target sequences are detected in solution by using short oligonucleotide probes, which are covalently linked to semiconductor quantum dots. In the second approach, DNA target sequences are covalently attached to a glass substrate and detected using oligonucleotides linked to semiconductor quantum dots.

  14. Heterovalent cation substitutional doping for quantum dot homojunction solar cells

    PubMed Central

    Stavrinadis, Alexandros; Rath, Arup K.; de Arquer, F. Pelayo García; Diedenhofen, Silke L.; Magén, César; Martinez, Luis; So, David; Konstantatos, Gerasimos

    2013-01-01

    Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%. PMID:24346430

  15. Quantum dot conjugates in a sub-micrometer fluidic channel

    DOEpatents

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2008-07-29

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  16. Quantum dot conjugates in a sub-micrometer fluidic channel

    DOEpatents

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  17. Electro-absorption of silicene and bilayer graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Abdelsalam, Hazem; Talaat, Mohamed H.; Lukyanchuk, Igor; Portnoi, M. E.; Saroka, V. A.

    2016-07-01

    We study numerically the optical properties of low-buckled silicene and AB-stacked bilayer graphene quantum dots subjected to an external electric field, which is normal to their surface. Within the tight-binding model, the optical absorption is calculated for quantum dots, of triangular and hexagonal shapes, with zigzag and armchair edge terminations. We show that in triangular silicene clusters with zigzag edges a rich and widely tunable infrared absorption peak structure originates from transitions involving zero energy states. The edge of absorption in silicene quantum dots undergoes red shift in the external electric field for triangular clusters, whereas blue shift takes place for hexagonal ones. In small clusters of bilayer graphene with zigzag edges the edge of absorption undergoes blue/red shift for triangular/hexagonal geometry. In armchair clusters of silicene blue shift of the absorption edge takes place for both cluster shapes, while red shift is inherent for both shapes of the bilayer graphene quantum dots.

  18. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  19. Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells.

    PubMed

    Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu

    2016-12-01

    Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells.

  20. Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

    SciTech Connect

    Uchida, Takafumi Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira

    2015-02-28

    Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD.

  1. Coherent radiation by quantum dots and magnetic nanoclusters

    SciTech Connect

    Yukalov, V. I.; Yukalova, E. P.

    2014-03-31

    The assemblies of either quantum dots or magnetic nanoclusters are studied. It is shown that such assemblies can produce coherent radiation. A method is developed for solving the systems of nonlinear equations describing the dynamics of such assemblies. The method is shown to be general and applicable to systems of different physical nature. Despite mathematical similarities of dynamical equations, the physics of the processes for quantum dots and magnetic nanoclusters is rather different. In a quantum dot assembly, coherence develops due to the Dicke effect of dot interactions through the common radiation field. For a system of magnetic clusters, coherence in the spin motion appears due to the Purcell effect caused by the feedback action of a resonator. Self-organized coherent spin radiation cannot arise without a resonator. This principal difference is connected with the different physical nature of dipole forces between the objects. Effective dipole interactions between the radiating quantum dots, appearing due to photon exchange, collectivize the dot radiation. While the dipolar spin interactions exist from the beginning, yet before radiation, and on the contrary, they dephase spin motion, thus destroying the coherence of moving spins. In addition, quantum dot radiation exhibits turbulent photon filamentation that is absent for radiating spins.

  2. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  3. Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K.

    PubMed

    Kalden, J; Tessarek, C; Sebald, K; Figge, S; Kruse, C; Hommel, D; Gutowski, J

    2010-01-01

    We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography. PMID:19946174

  4. Ultrafast optical properties of lithographically defined quantum dot amplifiers

    SciTech Connect

    Miaja-Avila, L.; Verma, V. B.; Mirin, R. P.; Silverman, K. L.; Coleman, J. J.

    2014-02-10

    We measure the ultrafast optical response of lithographically defined quantum dot amplifiers at 40 K. Recovery of the gain mostly occurs in less than 1 picosecond, with some longer-term transients attributable to carrier heating. Recovery of the absorption proceeds on a much longer timescale, representative of relaxation between quantum dot levels and carrier recombination. We also measure transparency current-density in these devices.

  5. Dynamical symmetries in Kondo tunneling through complex quantum dots.

    PubMed

    Kuzmenko, T; Kikoin, K; Avishai, Y

    2002-10-01

    Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4).

  6. Programmable Periodicity of Quantum Dot Arrays with DNA Origami Nanotubes

    PubMed Central

    2010-01-01

    To fabricate quantum dot arrays with programmable periodicity, functionalized DNA origami nanotubes were developed. Selected DNA staple strands were biotin-labeled to form periodic binding sites for streptavidin-conjugated quantum dots. Successful formation of arrays with periods of 43 and 71 nm demonstrates precise, programmable, large-scale nanoparticle patterning; however, limitations in array periodicity were also observed. Statistical analysis of AFM images revealed evidence for steric hindrance or site bridging that limited the minimum array periodicity. PMID:20681601

  7. Los Alamos Quantum Dots for Solar, Display Technology

    SciTech Connect

    Klimov, Victor

    2015-04-13

    Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.

  8. Whispering-gallery mode microcavity quantum-dot lasers

    SciTech Connect

    Kryzhanovskaya, N V; Maximov, M V; Zhukov, A E

    2014-03-28

    This review examines axisymmetric-cavity quantum-dot microlasers whose emission spectrum is determined by whisperinggallery modes. We describe the possible designs, fabrication processes and basic characteristics of the microlasers and demonstrate the possibility of lasing at temperatures above 100 °C. The feasibility of creating multichannel optical sources based on a combination of a broadband quantum-dot laser and silicon microring modulators is discussed. (review)

  9. Controlled Photon Switch Assisted by Coupled Quantum Dots.

    PubMed

    Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

    2015-01-01

    Quantum switch is a primitive element in quantum network communication. In contrast to previous switch schemes on one degree of freedom (DOF) of quantum systems, we consider controlled switches of photon system with two DOFs. These controlled photon switches are constructed by exploring the optical selection rules derived from the quantum-dot spins in one-sided optical microcavities. Several double controlled-NOT gate on different joint systems are greatly simplified with an auxiliary DOF of the controlling photon. The photon switches show that two DOFs of photons can be independently transmitted in quantum networks. This result reduces the quantum resources for quantum network communication.

  10. Controlled Photon Switch Assisted by Coupled Quantum Dots.

    PubMed

    Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

    2015-01-01

    Quantum switch is a primitive element in quantum network communication. In contrast to previous switch schemes on one degree of freedom (DOF) of quantum systems, we consider controlled switches of photon system with two DOFs. These controlled photon switches are constructed by exploring the optical selection rules derived from the quantum-dot spins in one-sided optical microcavities. Several double controlled-NOT gate on different joint systems are greatly simplified with an auxiliary DOF of the controlling photon. The photon switches show that two DOFs of photons can be independently transmitted in quantum networks. This result reduces the quantum resources for quantum network communication. PMID:26095049

  11. Interaction of solitons with a string of coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Kumar, Vijendra; Swami, O. P.; Taneja, S.; Nagar, A. K.

    2016-05-01

    In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.

  12. Quantum computation: algorithms and implementation in quantum dot devices

    NASA Astrophysics Data System (ADS)

    Gamble, John King

    In this thesis, we explore several aspects of both the software and hardware of quantum computation. First, we examine the computational power of multi-particle quantum random walks in terms of distinguishing mathematical graphs. We study both interacting and non-interacting multi-particle walks on strongly regular graphs, proving some limitations on distinguishing powers and presenting extensive numerical evidence indicative of interactions providing more distinguishing power. We then study the recently proposed adiabatic quantum algorithm for Google PageRank, and show that it exhibits power-law scaling for realistic WWW-like graphs. Turning to hardware, we next analyze the thermal physics of two nearby 2D electron gas (2DEG), and show that an analogue of the Coulomb drag effect exists for heat transfer. In some distance and temperature, this heat transfer is more significant than phonon dissipation channels. After that, we study the dephasing of two-electron states in a single silicon quantum dot. Specifically, we consider dephasing due to the electron-phonon coupling and charge noise, separately treating orbital and valley excitations. In an ideal system, dephasing due to charge noise is strongly suppressed due to a vanishing dipole moment. However, introduction of disorder or anharmonicity leads to large effective dipole moments, and hence possibly strong dephasing. Building on this work, we next consider more realistic systems, including structural disorder systems. We present experiment and theory, which demonstrate energy levels that vary with quantum dot translation, implying a structurally disordered system. Finally, we turn to the issues of valley mixing and valley-orbit hybridization, which occurs due to atomic-scale disorder at quantum well interfaces. We develop a new theoretical approach to study these effects, which we name the disorder-expansion technique. We demonstrate that this method successfully reproduces atomistic tight-binding techniques

  13. Si quantum dot structures and their applications

    NASA Astrophysics Data System (ADS)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  14. Fluorescence from a quantum dot and metallic nanosphere hybrid system

    SciTech Connect

    Schindel, Daniel G.; Singh, Mahi R.

    2014-03-31

    We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.

  15. Fluorescence from a quantum dot and metallic nanosphere hybrid system

    NASA Astrophysics Data System (ADS)

    Schindel, Daniel G.; Singh, Mahi R.

    2014-03-01

    We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.

  16. Long-Term Retention of Fluorescent Quantum Dots In Vivo

    NASA Astrophysics Data System (ADS)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan; Eructiez, Marcel P.; Lagerholm, B. Christoffer; Waggoner, Alan S.

    Quantum dots that emit in the near-infrared can be used in vivo to follow circulation, to target the reticuloendothelial system, and to map lymphatic drainage from normal tissues and tumors. We have explored the role of surface charge and passivation by polyethylene glycol in determining circulating lifetimes and sites of deposition. Use of long polyethylene glycol polymers increases circulating lifetime. Changing surface charge can partially direct quantum dots to the liver and spleen, or the lymph nodes. Quantum dots are cleared in the order liver > spleen > bone marrow > lymph nodes. Quantum dots retained by lymph nodes maintained fluorescence for two years, suggesting either that the coating is extremely stable or that some endosomes preserve quantum dot function. We also explored migration from tumors to sentinel lymph nodes using tumor models in mice; surface charge and size make little difference to transport from tumors. Antibody and Fab-conjugates of polymer-coated quantum dots failed to target tumors in vivo, probably because of size.

  17. Cavity -Quantum Dot interactions and mode coupling in a nanocavity

    NASA Astrophysics Data System (ADS)

    Kasisomayajula, Vijay; Russo, Onofrio

    2009-03-01

    We describe an approach for realizing effective manipulation of single electron state level transitions for quantum dots mediated by a nano-cavity. The two quantum dots interact with the cavity for the two dot system in the coulomb blockade energy region. Because of the zero dimensional structure of the quantum dots, the system can be implemented to be a characteristic entity for an efficient generator of single photons. This process is emphatically more selective in the coulomb/spin blockade region, where also, the system efficiency of the single photon event is most likely more probable. Whereas, it is clear that the photon efficiency is small, the cavity quantum electrodynamics (CQED) nature suggests an enhancement in the electron energy state being occupied by the second quantum dot. This is more likely with very strong coupling of the quantum dots to the cavity with cavity quality factors larger than perhaps 10^5. Quality factors in excess of 10^5 have been demonstrated experimentally^1. 1. K. Srinivasan, M. Borselli, T. J. Johnson, P. E. Barclay, O. Painter, A. Stintz, and S. Krishna, Appl. Phys. Lett. 86, 151106 (2005). [ISI

  18. Optical detection of brain tumors using quantum dots

    NASA Astrophysics Data System (ADS)

    Toms, Steven A.; Daneshvar, Hamid; Muhammad, Osman; Jackson, Heather; Vogelbaum, Michael A.; Bruchez, Marcel

    2005-11-01

    Introduction: Brain tumor margin detection remains a challenging problem in the operative resection of gliomas. A novel nanoparticle, a PEGylated quantum dot, has been shown to be phagocytized by macrophages in vivo. This feature may allow quantum dots to co-localize with brain tumors and serve as an optical aid in the surgical resection of brain tumors. Methods: Sprague-Daly rats were injected intracranially with C6 gliosarcoma cell lines to establish tumors. Two weeks after implantation of brain tumors, PEGylated quantum dots emitting at 705 nm (PEG-705 QD) were injected via the tail vein. Twenty-four hours post PEG-705 QD injection, the animals were sacrificed and their tissues examined. Results: PEGylated quantum dots are avidly phagocytized by macrophages and are taken up by liver, spleen and lymph nodes. Macrophages and microglia co-localize with glioma cells, carrying the optical nanoparticle, the quantum dot. Excitation of the PEG-705 quantum dots gives off a deep red fluorescence detectable with charge coupled device (CCD) cameras, optical spectroscopy units, and in dark field fluorescence microscopy. Conclusions: PEG-705QDs co-localize with brain tumors and may serve as an optical adjunct to aid in the operative resection of gliomas. The particles may be visualized in surgery with CCD cameras or detected by optical spectroscopy.

  19. Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes

    SciTech Connect

    Jahangir, Shafat; Bhattacharya, Pallab; Pietzonka, Ines; Strassburg, Martin

    2014-09-15

    We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700 K have been derived at a current density of 45 A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

  20. Single-Photon Superradiance from a Quantum Dot.

    PubMed

    Tighineanu, Petru; Daveau, Raphaël S; Lehmann, Tau B; Beere, Harvey E; Ritchie, David A; Lodahl, Peter; Stobbe, Søren

    2016-04-22

    We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a fivefold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies. PMID:27152804

  1. Computation of energy states of hydrogenic quantum dot with two-electrons

    NASA Astrophysics Data System (ADS)

    Yakar, Y.; Özmen, A.; ćakır, B.

    2016-03-01

    In this study we have investigated the electronic structure of the hydrogenic quantum dot with two electrons inside an impenetrable potential surface. The energy eigenvalues and wavefunctions of the ground and excited states of spherical quantum dot have been calculated by using the Quantum Genetic Algorithm (QGA) and Hartree-Fock Roothaan (HFR) method, and the energies are investigated as a function of dot radius. The results show that as dot radius increases, the energy of quantum dot decreases.

  2. State hybridization shapes the photocurrent in triple quantum dot nanojunctions

    NASA Astrophysics Data System (ADS)

    Beltako, Katawoura; Cavassilas, Nicolas; Michelini, Fabienne

    2016-08-01

    We investigated a prototype of a quantum dot based photodetector made of a dot absorber interconnected with two lateral dot filters in contact with semiconducting leads. Using the nonequilibrium Green's function technique, we found that there are two opposite evolutions of the photocurrent in the vicinity of the tunnel resonance for such a kind of nanodevice. This evolution depends on where the strongest hybridization of states happens, and hence still reveals a quantum effect. If the filter states hybridize more with the absorber states than the ones of the leads, the photocurrent shows a maximum at the tunnel resonance, while it is minimized in the opposite case.

  3. Narrow optical line width from site-controlled InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Lily; Yakes, Michael; Sweeney, Timothy; Carter, Samuel; Kim, Chulsoo; Kim, Mijin; Bracker, Allan; Gammon, Daniel

    2013-03-01

    The incorporation of self-assembled quantum dots (QDs) in systematically scalable quantum devices requires a method of nucleating dots with nanometer-scale spatial accuracy while preserving their narrow optical line width. We have developed a technique combining e-beam lithography, wet etching, and molecular beam epitaxial (MBE) growth to deterministically position InGaAs QDs with spectrometer limited photoluminescence line widths. Our technique takes advantage of the anisotropy in GaAs growth to evolve an etched pattern of holes and lines into faceted structures in which dots nucleate. Using this technique, we were able to grow a buffer layer of pure GaAs up to 90 nm in thickness between the processed surface and the dot nucleation surface, effectively separating the QDs from unavoidable residual defects and impurities on the patterned surface that broaden their optical line widths. Additionally, we demonstrate control over the number of dots nucleating per site, from single to a chain of several, by varying the dimensions of the original pattern. Our dots are grown in a Schottky diode structure. Their PL spectrum shows discrete charging transitions, with narrow linewidths near the spectrometer's resolution limit of 20 micro eV.

  4. Compact Interconnection Networks Based on Quantum Dots

    NASA Technical Reports Server (NTRS)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew

    2003-01-01

    Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary

  5. The scaling of the effective band gaps in indium-arsenide quantum dots and wires.

    PubMed

    Wang, Fudong; Yu, Heng; Jeong, Sohee; Pietryga, Jeffrey M; Hollingsworth, Jennifer A; Gibbons, Patrick C; Buhro, William E

    2008-09-23

    Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.

  6. Impurity effects on coupled quantum dot spin qubits in semiconductors

    NASA Astrophysics Data System (ADS)

    Nguyen, Nga; Das Sarma, Sankar

    2011-03-01

    Localized electron spins confined in semiconductor quantum dots are being studied by many groups as possible elementary qubits for solid-state quantum computation. We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the presence of an external magnetic field. We calculate the effect of the impurity on the 2-electron energy spectrum of each individual dot as well as on the spectrum of the coupled-double-dot 2-electron system. We find that the singlet-triplet exchange splitting between the two lowest energy states, both for the individual dots and the coupled dot system, depends sensitively on the location of the impurity and its coupling strength (i.e. the effective charge). We comment on the impurity effect in spin qubit operations in the double dot system based on our numerical results. This work is supported by LPS-CMTC and CNAM.

  7. Spin qubits in quantum dots - beyond nearest-neighbour exchange

    NASA Astrophysics Data System (ADS)

    Vandersypen, Lieven

    The spin of a single electron is the canonical two-level quantum system. When isolated in a semiconductor quantum dot, a single electron spin provides a well-controlled and long-lived quantum bit. So far, two-qubit gates in this system have relied on the spin exchange interaction that arises when the wave functions of neighbouring electrons overlap. Furthermore, experimental demonstrations of controlled spin-exchange have been limited to 1D quantum dot arrays only. Here we explore several avenues for scaling beyond 1D arrays with nearest-neighbour coupling. First, we show that second-order tunnel processes allow for coherent spin-exchange between non-nearest neighbour quantum dots. The detuning of the intermediate quantum dot controls the frequency of the exchange-driven oscillations of the spins. Second, we demonstrate shuttling of electrons in quantum dot arrays preserving the spin projection for more than 500 hops. We use this technique to read out multiple spins in a way analogous to the operation of a CCD. Finally, we develop superconducting resonators that are resilient to magnetic field and with a predicted tenfold increase in vacuum electric field amplitudes. This makes coupling spin qubits via superconducting resonators in a circuit-QED approach a realistic possibility. Supported by ERC, FOM, NWO, IARPA, ARO, EU.

  8. Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A

    NASA Astrophysics Data System (ADS)

    Ha, Neul; Mano, Takaaki; Kuroda, Takashi; Mitsuishi, Kazutaka; Ohtake, Akihiro; Castellano, Andrea; Sanguinetti, Stefano; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki

    2015-04-01

    We demonstrated the droplet epitaxial growth of InAs quantum dots on a GaAs(111)A substrate, which emitted at telecommunication wavelengths. A high-quality metamorphic In0.52Al0.48As layer was formed by inserting three monolayers of InAs between GaAs(111)A and InAlAs. InAs quantum dots were grown on the InAlAs surface by droplet epitaxy. They exhibited a laterally symmetrical shape owing to the C3v symmetry of the {111} surface. The photoluminescence signals of capped quantum dots indicated broadband spectra covering wavelengths from 1.3 to 1.55 µm. Thus, our dots are potentially useful for constructing entangled photon sources compatible with current telecommunication networks.

  9. Optically active quantum dots in monolayer WSe2.

    PubMed

    Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V; Lembke, Dominik S; Kis, Andras; Imamoğlu, A

    2015-06-01

    Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature. Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100 meV lower than that of two-dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host transition-metal dichalcogenide. The large ∼1 meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement that is most probably induced by impurities or defects. The possibility of achieving electrical control in van der Waals heterostructures and to exploit the spin-valley degree of freedom renders transition-metal-dichalcogenide quantum dots interesting for quantum information processing.

  10. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    PubMed

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. PMID:27245962

  11. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    PubMed

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor.

  12. Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

    NASA Astrophysics Data System (ADS)

    Brauns, Matthias; Ridderbos, Joost; Li, Ang; van der Wiel, Wilfred G.; Bakkers, Erik P. A. M.; Zwanenburg, Floris A.

    2016-10-01

    We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

  13. Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Rothfuchs, Charlotte; Kukharchyk, Nadezhda; Koppe, Tristan; Semond, Fabrice; Blumenthal, Sarah; Becker, Hans-Werner; As, Donat J.; Hofsäss, Hans C.; Wieck, Andreas D.; Ludwig, Arne

    2016-09-01

    We report on ion implantation into GaN QDs and investigate their radiation hardness. The experimental study is carried out by photoluminescence (PL) measurements on molecular beam epitaxy-grown GaN quantum dots after ion implantation. Both quantum dots grown in the hexagonal (H) and the cubic (C) crystal structure were subjected to gallium ions with an energy of 400 kV (H) and 75 kV (C) with fluences ranging from 5 ×1010 cm-2 to 1 ×1014 cm-2 (H) and to 1 ×1015 cm-2 (C), respectively. Low-temperature PL measurements reveal a PL quenching for which a quantitative model as a function of the ion fluence is developed. A high degradation resistance is concluded. A non-radiative trap with one main activation energy is found for all QD structures by temperature-dependent PL measurements. Further analysis of fluence-dependent PL energy shifts shows ion-induced intermixing and strain effects. Particular for the hexagonal quantum dots, a strong influence of the quantum confined Stark effect is present.

  14. Surface Induced Magnetism in Quantum Dots

    SciTech Connect

    Meulenberg, R W; Lee, J I

    2009-08-20

    The study of nanometer sized semiconductor crystallites, also known as quantum dots (QDs), has seen rapid advancements in recent years in scientific disciplines ranging from chemistry, physics, biology, materials science, and engineering. QD materials of CdSe, ZnSe, InP, as well as many others, can be prepared in the size range of 1-10 nm producing uniform, nearly monodisperse materials that are typically coated with organic molecules [1-3]. The strength of charge carrier confinement, which dictates the size-dependent properties, in these QDs depends on the nature of the material and can be correlated to the Bohr radius for the system of interest. For instance, the Bohr radius for CdSe is {approx} 5 nm, while in the more covalent structure of InP, the Bohr radius approaches {approx} 10 nm. The study of CdSe QDs has been particularly extensive during the last decade because they exhibit unique and tunable optical properties and are readily synthesized with high-crystallinity and narrow size dispersions. Although the core electronic properties of CdSe are explained in terms of the quantum confinement model, experimental efforts to elucidate the surface structure of these materials have been limited. Typically, colloidal CdSe QDs are coated with an organic surfactant, which typically consists of an organo-phosphine, -thiol, or -amine, that has the function of energetically relaxing defect states via coordination to partially coordinated surface atoms. The organic surfactant also acts to enhance carrier confinement and prevent agglomeration of the particles. Chemically, it has been shown that the bonding of the surfactant to the CdSe QD occurs through Cd atoms resulting cleavage of the Se atoms and formation of a Cd-rich (i.e. non-stoichiometric) particle [5].

  15. High performance continuous wave 1.3 μm quantum dot lasers on silicon

    SciTech Connect

    Liu, Alan Y. Norman, Justin; Zhang, Chong; Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Gossard, Arthur C.; Bowers, John E.

    2014-01-27

    We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

  16. Carrier transfer in vertically stacked quantum ring-quantum dot chains

    SciTech Connect

    Mazur, Yu. I. Dorogan, V. G.; Benamara, M.; Salamo, G. J.; Lopes-Oliveira, V.; Lopez-Richard, V.; Teodoro, M. D.; Marques, G. E.; Souza, L. D. de; Wu, J.; Wang, Z. M.; Tarasov, G. G.; Marega, E.

    2015-04-21

    The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

  17. Carrier transfer in vertically stacked quantum ring-quantum dot chains

    NASA Astrophysics Data System (ADS)

    Mazur, Yu. I.; Lopes-Oliveira, V.; de Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega, E.; Wang, Z. M.; Marques, G. E.; Salamo, G. J.

    2015-04-01

    The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR-QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

  18. Quantum dot mediated imaging of atherosclerosis

    NASA Astrophysics Data System (ADS)

    Jayagopal, Ashwath; Su, Yan Ru; Blakemore, John L.; Linton, MacRae F.; Fazio, Sergio; Haselton, Frederick R.

    2009-04-01

    The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE-/- mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.

  19. Photodynamic antibacterial effect of graphene quantum dots.

    PubMed

    Ristic, Biljana Z; Milenkovic, Marina M; Dakic, Ivana R; Todorovic-Markovic, Biljana M; Milosavljevic, Momir S; Budimir, Milica D; Paunovic, Verica G; Dramicanin, Miroslav D; Markovic, Zoran M; Trajkovic, Vladimir S

    2014-05-01

    Synthesis of new antibacterial agents is becoming increasingly important in light of the emerging antibiotic resistance. In the present study we report that electrochemically produced graphene quantum dots (GQD), a new class of carbon nanoparticles, generate reactive oxygen species when photoexcited (470 nm, 1 W), and kill two strains of pathogenic bacteria, methicillin-resistant Staphylococcus aureus and Escherichia coli. Bacterial killing was demonstrated by the reduction in number of bacterial colonies in a standard plate count method, the increase in propidium iodide uptake confirming the cell membrane damage, as well as by morphological defects visualized by atomic force microscopy. The induction of oxidative stress in bacteria exposed to photoexcited GQD was confirmed by staining with a redox-sensitive fluorochrome dihydrorhodamine 123. Neither GQD nor light exposure alone were able to cause oxidative stress and reduce the viability of bacteria. Importantly, mouse spleen cells were markedly less sensitive in the same experimental conditions, thus indicating a fairly selective antibacterial photodynamic action of GQD.

  20. Doping silicon nanocrystals and quantum dots.

    PubMed

    Oliva-Chatelain, Brittany L; Ticich, Thomas M; Barron, Andrew R

    2016-01-28

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  1. Immune cells tracing using quantum dots

    NASA Astrophysics Data System (ADS)

    Hoshino, Akiyoshi; Fujioka, Kouki; Kawamura, Yuki I.; Toyama-Sorimachi, Noriko; Yasuhara, Masato; Dohi, Taeko; Yamamoto, Kenji

    2006-02-01

    Fluorescent nanoparticles, such as nanocrystal quantum dots (QDs), have potential to be applied to molecular biology and bioimaging, since some nanocrystals emit higher and longer lasting fluorescence than conventional organic probes do. Here we report an example of labeling immune cells by QDs. We collected splenic CD4 + T-lymphocyte and peritoneal macrophages from mice. Then cells were labeled with QDs. QDs are incorporated into the T-lymphocyte and macrophages immediately after addition and located in the cytoplasm via endocytosis pathway. The fluorescence of QDs held in the endosomes was easily detected for more than a week. In addition, T-lymphocytes labeled with QDs were stable and cell proliferation or cytokine production including IL-2 and IFN-γ was not affected. When QD-labeled T-lymphocytes were adoptively transferred intravenously to mice, they remained in the peripheral blood and spleen up to a week. Using QD-labeled peritoneal macrophages, we studied cell traffic during inflammation on viscera in peritoneum cavity. QD-labeled macrophages were transplanted into the peritoneum of the mouse, and colitis was induced by intracolonic injection of a hapten, trinitrobenzensulfonic acid. With the aid of stong signals of QDs, we found that macrophage accumuled on the inflammation site of the colon. These results suggested that fluorescent probes of QDs might be useful as bioimaging tools for tracing target cells in vivo.

  2. Carbon Quantum Dots for Zebrafish Fluorescence Imaging

    PubMed Central

    Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo

    2015-01-01

    Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties. Herein, we describe fluorescence bioimaging of zebrafish using C-QDs as probe in terms of the preparation of C-QDs, zebrafish husbandry, embryo harvesting, and introduction of C-QDs into embryos and larvae by soaking and microinjection. The multicolor of C-QDs was validated with their imaging for zebrafish embryo. The distribution of C-QDs in zebrafish embryos and larvae were successfully observed from their fluorescence emission. the bio-toxicity of C-QDs was tested with zebrafish as model and C-QDs do not interfere to the development of zebrafish embryo. All of the results confirmed the high biocompatibility and low toxicity of C-QDs as imaging probe. The absorption, distribution, metabolism and excretion route (ADME) of C-QDs in zebrafish was revealed by their distribution. Our work provides the useful information for the researchers interested in studying with zebrafish as a model and the applications of C-QDs. The operations related zebrafish are suitable for the study of the toxicity, adverse effects, transport, and biocompatibility of nanomaterials as well as for drug screening with zebrafish as model. PMID:26135470

  3. Asymmetric shape transitions of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Chaozhen; Spencer, Brian J.

    2016-06-01

    We construct a two-dimensional continuum model to describe the energetics of shape transitions in fully faceted epitaxial quantum dots (strained islands) via minimization of elastic energy and surface energy at fixed volume. The elastic energy of the island is based on a third-order approximation, enabling us to consider shape transitions between pyramids, domes, multifaceted domes and asymmetric intermediate states. The energetics of the shape transitions are determined by numerically calculating the facet lengths that minimize the energy of a given island type of prescribed island volume. By comparing the energy of different island types with the same volume and analysing the energy surface as a function of the island shape parameters, we determine the bifurcation diagram of equilibrium solutions and their stability, as well as the lowest barrier transition pathway for the island shape as a function of increasing volume. The main result is that the shape transition from pyramid to dome to multifaceted dome occurs through sequential nucleation of facets and involves asymmetric metastable transition shapes. We also explicitly determine the effect of corner energy (facet edge energy) on shape transitions and interpret the results in terms of the relative stability of asymmetric island shapes as observed in experiment.

  4. Counted Sb donors in Si quantum dots

    NASA Astrophysics Data System (ADS)

    Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

    2015-03-01

    Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  5. Doping silicon nanocrystals and quantum dots

    NASA Astrophysics Data System (ADS)

    Oliva-Chatelain, Brittany L.; Ticich, Thomas M.; Barron, Andrew R.

    2016-01-01

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  6. Quantum dot laser optimization: selectively doped layers

    NASA Astrophysics Data System (ADS)

    Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

    2016-08-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

  7. Toxicity of carbon group quantum dots

    NASA Astrophysics Data System (ADS)

    Hanada, Sanshiro; Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Hirakuri, Kenji; Yamamoto, Kenji

    2009-02-01

    Carbon group quantum dots (QDs) such as carbon, silicon and germanium, have potential for biomedical applications such as bio-imaging markers and drug delivery systems and are expected to demonstrate several advantages over conventional fluorescent QDs such as CdSe, especially in biocompatibility. We assessed biocompatibility of newly manufactured silicon QDs (Si-QDs), by means of both MTT assay and LDH assay for HeLa cells in culture and thereby detected the cellular toxicity by administration of high concentration of Si-QD (>1000 μg/mL), while we detected the high toxicity by administration of over 100 μg/mL of CdSe-QDs. As a hypothesis for the cause of the cellular toxicity, we measured oxy-radical generation from the QDs by means of luminol reaction method. We detected generation of oxy-radicals from the Si-QDs and those were decreased by radical scavenger such as superoxide dismutase (SOD) and N-acetyl cysteine (NAC). We concluded that the Si-QD application to cultured cells in high concentration led cell membrane damage by oxy-radicals and combination usage with radical scavenger is one of the answers.

  8. Colloidal quantum dot photodetectors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Adinolfi, Valerio; Sargent, Edward H.

    2015-08-01

    Colloidal quantum dots (CQDs) are emerging solution processed materials combining low cost, easy deposition on large and flexible substrates, and bandgap tunability. The latter feature, which allows spectral tuning of the absorption profile of the semiconductor, makes these materials particularly attractive for light detection applications. Lead sulfide (PbS) CQDs, in particular, have shown astonishing performance as a light sensitive material operating at visible and infrared (IR) wavelengths. Early studies of PbS CQDs used as a photosensitive resistor (photoconductor) showed an impressive responsivity - exceeding 1000 A/W - and a detectivity (D*) higher then 10^13 Jones. This impressive D* was preserved in the successive development of the first PbS CQD photodiode, showing the possibility to realize fast - f_3db > 1Mhz - and sensitive IR detectors. Currently, the field is moving toward the development of hybrid devices and phototransitors. PbS CQDs have been combined in field effect transistors (FETs) with graphene and MoS2 channels, showing ultra-high gain (exceeding 10^8 electrons/photons) and high D*. Recently a photo-junction FET (photo-JFET) has been reported that breaks the inherent dark current/gain/bandwidth compromise affecting photoconductive light detectors. With this presentation we offer a broad overview on CQD photodetection highlighting the past achievements, the benefits, the challenges and the prospects for the future research on this field.

  9. Advancing colloidal quantum dot photovoltaic technology

    NASA Astrophysics Data System (ADS)

    Cheng, Yan; Arinze, Ebuka S.; Palmquist, Nathan; Thon, Susanna M.

    2016-06-01

    Colloidal quantum dots (CQDs) are attractive materials for solar cells due to their low cost, ease of fabrication and spectral tunability. Progress in CQD photovoltaic technology over the past decade has resulted in power conversion efficiencies approaching 10%. In this review, we give an overview of this progress, and discuss limiting mechanisms and paths for future improvement in CQD solar cell technology.We briefly summarize nanoparticle synthesis and film processing methods and evaluate the optoelectronic properties of CQD films, including the crucial role that surface ligands play in materials performance. We give an overview of device architecture engineering in CQD solar cells. The compromise between carrier extraction and photon absorption in CQD photovoltaics is analyzed along with different strategies for overcoming this trade-off. We then focus on recent advances in absorption enhancement through innovative device design and the use of nanophotonics. Several light-trapping schemes, which have resulted in large increases in cell photocurrent, are described in detail. In particular, integrating plasmonic elements into CQD devices has emerged as a promising approach to enhance photon absorption through both near-field coupling and far-field scattering effects. We also discuss strategies for overcoming the single junction efficiency limits in CQD solar cells, including tandem architectures, multiple exciton generation and hybrid materials schemes. Finally, we offer a perspective on future directions for the field and the most promising paths for achieving higher device efficiencies.

  10. Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals

    SciTech Connect

    Heshmati, S; Golmohammadi, S; Abedi, K; Taleb, H

    2014-03-28

    We have studied the influence of the quantum-dot (QD) width and the quantum-dot conduction band (QD-CB) offset on the efficiency of quantum-dot intermediate band solar cells (QD-IBSCs). Simulation results demonstrate that with increasing QD-CB offset and decreasing QD width, the maximum efficiency is achieved. (laser applications and other topics in quantum electronics)

  11. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NASA Astrophysics Data System (ADS)

    Baart, T. A.; Eendebak, P. T.; Reichl, C.; Wegscheider, W.; Vandersypen, L. M. K.

    2016-05-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  12. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    SciTech Connect

    Korenev, V. V. Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  13. Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

    DOE PAGESBeta

    Michael, Stephan; Chow, Weng; Schneider, Hans

    2016-05-01

    In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less

  14. Quantum Hall effect in semiconductor systems with quantum dots and antidots

    SciTech Connect

    Beltukov, Ya. M.; Greshnov, A. A.

    2015-04-15

    The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T ∼ 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.

  15. Quantum dots: Time to get the nukes out

    NASA Astrophysics Data System (ADS)

    Schroer, Michael D.; Petta, Jason R.

    2008-07-01

    The ability to electrically control spin dynamics in quantum dots makes them one of the most promising platforms for solid-state quantum-information processing. Minimizing the influence of the nuclear spin environment is an important step towards realizing such promise.

  16. 2 Micrometers InAsSb Quantum-dot Lasers

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Uhl, David; Keo, Sam

    2004-01-01

    InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

  17. Sunlight assisted photodegradation by tin oxide quantum dots

    NASA Astrophysics Data System (ADS)

    Shajira, P. S.; Prabhu, V. Ganeshchandra; Bushiri, M. Junaid

    2015-12-01

    Rutile phase of SnO2 quantum dots of average size of 2.5 nm were synthesized at a growth temperature of 70 °C and characterized with XRD, TEM, FTIR and Raman analysis. The effective strain within the lattice of SnO2 quantum dots was calculated by Williamson-Hall method. The broad peaks in XRD as well as Raman spectra and the presence of Raman bands at 569 and 432 cm-1 are due to lower crystallinity of nanoparticles. The optical band gap of SnO2 quantum dots was increased to 3.75 eV attributed to the quantum size effect. SnO2 quantum dots were annealed in air atmosphere and the crystallite size of the particles increased with annealing temperature. Sunlight assisted photodegration property of SnO2 quantum dots was investigated with vanillin as a model system and it shows the photodegradation efficiency of 87%. The photoluminescence and photodegradation efficiency of nanocrystallite SnO2 decreases with increase of crystallite size contributed to the reduction in population of defects and surface area.

  18. Size-Minimized Quantum Dots for Molecular and Cellular Imaging

    NASA Astrophysics Data System (ADS)

    Smith, Andrew M.; Wen, Mary M.; Wang, May D.; Nie, Shuming

    Semiconductor quantum dots, tiny light-emitting particles on thenanometer scale, are emerging as a new class of fluorescent labels for a broad range of molecular and cellular applications. In comparison with organic dyes and fluorescent proteins, they have unique optical and electronic properties such as size-tunable light emission, intense signal brightness, resistance to photobleaching, and broadband absorption for simultaneous excitation of multiple fluorescence colors. Here we report new advances in minimizing the hydrodynamic sizes of quantum dots using multidentate and multifunctional polymer coatings. A key finding is that a linear polymer containing grafted amine and thiol coordinating groups can coat nanocrystals and lead to a highly compact size, exceptional colloidal stability, strong resistance to photobleaching, and high fluorescence quantum yields. This has allowed a new generation of bright and stable quantum dots with small hydrodynamic diameters between 5.6 and 9.7 nm with tunable fluorescence emission from the visible (515 nm) to the near infrared (720 nm). These quantum dots are well suited for molecular and cellular imaging applications in which the nanoparticle hydrodynamic size needs to be minimized. Together with the novel properties of new strain-tunable quantum dots, these findings will be especially useful for multicolor and super-resolution imaging at the single-molecule level.

  19. Ferritin-templated quantum dots for quantum logic gates (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-05-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. This technology is essential for NASA, DoD, and industrial nanotechnology applications such as: ultra-high density data storage, quantum electronic devices, biomedical nanorobots, molecular tagging, terahertz radiation sources, nanoelectromechanical systems (NEMS), etc. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. By either the magnetic or electrical property of reconstituted core materials, the QD can be used for logic gates which are fundamental building blocks for quantum computing. However, QLGs are in an incubation stage and still have many potential obstacles that need to be addressed, such as an error collection, a decoherence, and a hardware architecture. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The other methods known so far, such as self-assembled QD grown in the Stranski-Krastanov mode, are usually randomly organized. The QD development by bio-template includes the electrochemical/chemical reconstitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagon-shaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various

  20. Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime.

    PubMed

    Tóvári, Endre; Makk, Péter; Rickhaus, Peter; Schönenberger, Christian; Csonka, Szabolcs

    2016-06-01

    We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that are formed between the Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states. PMID:27198562

  1. Simulating electron spin entanglement in a double quantum dot

    NASA Astrophysics Data System (ADS)

    Rodriguez-Moreno, M. A.; Hernandez de La Luz, A. D.; Meza-Montes, Lilia

    2011-03-01

    One of the biggest advantages of having a working quantum-computing device when compared with a classical one, is the exponential speedup of calculations. This exponential increase is based on the ability of a quantum system to create and operate on entangled states. In order to study theoretically the entanglement between two electron spins, we simulate the dynamics of two electron spins in an electrostatically-defined double quantum dot with a finite barrier height between the dots. Electrons are initially confined to separated quantum dots. Barrier height is varied and the spin entanglement as a function of this variation is investigated. The evolution of the system is simulated by using a numerical approach for solving the time-dependent Schrödinger equation for two particles. Partially supported by VIEP-BUAP.

  2. Enlarged Symmetry and Coherence in Arrays of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Onufriev, Alexey; Marston, Brad

    1997-03-01

    Advances in fabrication techniques have made nanostructures a promising arena for the study of many-body correlations(C.A. Stafford and S. Das Sarma Phys. Rev. Lett. 72), 3590 (1993). and the persistence of quantum coherence. We find conditions under which enhanced symmetry characterized by the group SU occurs in isolated semiconducting quantum dots. A Hubbard model then describes a pillar array of coupled dots and at half-filling it can be mapped onto a SU(4) spin chain. The physics of these new structures is rich as novel phases may be attainable. The chain spontaneously dimerizes which we confirm numerically by using the Density Matrix Renormalization Group (DMRG) technique. Our DMRG analysis also shows that this state is robust to perturbations which break SU(4) symmetry. We propose ways to experimentally verify the phases and comment on the possible application of quantum dot arrays to the problem of quantum computation(Seth Lloyd, Science, 23) 1073 (1996)..

  3. Theoretical studies of graphene nanoribbon quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Chieh; Chang, Yia-Chung

    2015-12-01

    Graphene nanoribbon quantum dot qubits have been proposed as promising candidates for quantum computing applications to overcome the spin-decoherence problems associated with typical semiconductor (e.g., GaAs) quantum dot qubits. We perform theoretical studies of the electronic structures of graphene nanoribbon quantum dots by solving the Dirac equation with appropriate boundary conditions. We then evaluate the exchange splitting based on an unrestricted Hartree-Fock method for the Dirac particles. The electronic wave function and long-range exchange coupling due to the Klein tunneling and the Coulomb interaction are calculated for various gate configurations. It is found that the exchange coupling between qubits can be significantly enhanced by the Klein tunneling effect. The implications of our results for practical qubit construction and operation are discussed.

  4. Theoretical studies of graphene nanoribbon quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Chieh; Chang, Yia-Chung

    Graphene nanoribbon quantum dot qubits have been proposed as promising candidates for quantum computing applications to overcome the spin-decoherence problems associated with typical semiconductor (e.g., GaAs) quantum dot qubits. We perform theoretical studies of the electronic structures of graphene nanoribbon quantum dots by solving the Dirac equation with appropriate boundary conditions. We then evaluate the exchange splitting based on an unrestricted Hartree-Fock method for the Dirac particles. The electronic wave function and long-range exchange coupling due to the Klein tunneling and the Coulomb interaction are calculated for various gate configurations. It is found that the exchange coupling between qubits can be significantly enhanced by the Klein tunneling effect. The implications of our results for practical qubit construction and operation are discussed. This work was supported in part by the Ministry of Science and Technology, Taiwan, under Contract No. MOST 104-2112-M-001-009-MY2.

  5. Properties of a polaron confined in a spherical quantum dot

    NASA Astrophysics Data System (ADS)

    Melnikov, Dmitriy V.

    A Frohlich Hamiltonian describing the electron-phonon interaction in a spherical quantum dot embedded in another polar material is derived, taking into account interactions with both bulk longitudinal optical and surface optical phonons. The Hamiltonian is appropriate to the general case of a finite confining potential originating from a bandgap mismatch between the materials of the dot and the surrounding matrix. This Hamiltonian is then applied to treat the electron-phonon interaction in the adiabatic approximation for various quantum dot systems. It was found that, as the radius of the dot decreases, the magnitude of the electron-phonon interaction energy first increases, passes through a maximum, and then gradually decreases to the value appropriate to the situation where the electron is weakly localized inside the dot. For most dot radii the polaron properties are described well by a model assuming perfect electron confinement. Based on this result, the problem of the bound polaron confined perfectly in the quantum dot was investigated within the adiabatic and all-coupling variational approaches. The polaron properties have been studied performing both analytical and numerical calculations for various radii of the quantum dot and for different impurity positions inside the dot. Within the adiabatic approximation, it was found that the magnitude of the electron-phonon interaction increases as the radius decreases for any impurity position. It was also shown that the input from the electron-surface-phonon interaction to the total polaron energy is much larger than was found earlier for the free polaron confined in the dot. As a function of the impurity position, the electron-surface-phonon interaction energy increases as the impurity is shifted towards the surface, reaches its maximum when the impurity is positioned inside the dot and then decreases as the impurity moved close to surface. The all-coupling approach gave rise to the following results: for any

  6. Semiconductor quantum dot intermixing for monolithic photonic integration

    NASA Astrophysics Data System (ADS)

    Wang, Yang

    Monolithic photonic integration and semiconductor quantum dot (QD) are two key technologies for the development of future fiber optic networks. This PhD work explores the possibilities for joining of these two ideas to create next generation photonic integrated circuits through the modeling, process development and characterization, and device demonstration of QD intermixing technique. The one-dimensional quantum well (QW) and three-dimensional QD intermixing model are developed. The calculations of multiple cations intermixing in InGaAsSb/AlGaAsSb QW structure suggest that a large tuning range of 2.4 mum to 1.7 mum can be obtained using intermixing technique. The theoretical analysis of quantum-confined Stark effect in the as-grown and interdiffused QD structures shows that the nonzero built-in dipole moment exists in the as-grown non-symmetrical QDs and we found that the uniform Fick's type intermixing will reduce the built-in dipole significantly. The enhanced Stark shifts have also been predicted for QD structures after intermixing. Impurity-free vacancy induced disordering (IFVD) and N ion-implantation induced disordering (N-IID) have been performed to promote the efficient group-III intermixing in InP-based quantum dash (QDash) laser structure. Selective intermixing can be achieved using SixNy as intermixing source and SiO2 as intermixing mask with a differential wavelength shift of 76 nm. A model has been proposed to explain the selective intermixing behavior and we postulate that the enhanced intermixing under SixNy capping layer is related to the dominant In diffusion with respect to other group-III atoms. More efficient intermixing which requires a lower activation than the IFVD was observed in N-IID) process. Differential bandgap shift of 112 nm has been observed after N implantation at 5 x 1012 ions/cm2 and subsequent annealing at 700°C. High quality bandgap tuned QDash lasers have been fabricated with over 120 nm wavelength blueshift showing the well

  7. A high-performance white-light-emitting-diodes based on nano-single crystal divanadates quantum dots

    PubMed Central

    Yang, Weiqing; Liu, Zhongli; Chen, Jun; Huang, Li; Zhang, Lei; Pan, Hong; Wu, Bo; Lin, Yuan

    2015-01-01

    We report a high-performance phosphors-free white light-emitting-diodes (w-LEDs) using Ba2V2O7 or Sr2V2O7 quantum dots that directly heteroepitaxially grown on common quartz substrates by polymer assisted deposition (PAD). The quantum efficiency of quantum dots is as high as 95%. More importantly, electronic local functions, band structure and partial density of states have been firstly calculated to study the luminescent and heteroepitaxial growth mechanisms by the Ab-initio Simulation. Additionally, the glaring white light excited at a wavelength of 325 nm was experimentally observed, which unambiguously demonstrated that such quantum dots can be efficient w-LEDs for solid state lighting. PMID:25989049

  8. Decoherence and adiabatic transport in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Switkes, Michael

    2000-10-01

    I present research on ballistic electron transport in lateral GaAs/AlGaAs quantum dots connected to the environment with leads supporting one or more fully transmitting quantum modes. The first part of this dissertation examines electron the phenomena which mediate the transition from quantum mechanical to classical behavior in these quantum dots. Measurements of electron phase coherence time based on the magnitude of weak localization correction are presented as a function both of temperature and of applied bias. The coherence time is found to depend on temperature approximately as a sum of two power laws, tauφ ≈ AT-1 + BT-2, in agreement with the prediction for diffusive two dimensional systems but not with predictions for closed quantum dots or ballistic 2D systems. The effects of a large applied bias can be described with an elevated effective electron temperature calculated from the balance of Joule heating and cooling by Wiedemann-Franz out diffusion of hot electrons. The limits this imposes for quantum dot based technologies are examined through the detailed analysis of a quantum dot magnetometer. The second part of the work presented here focuses on a novel form of electron transport, adiabatic quantum electron pumping, in which a current is driven by cyclic changes in the wave function of a mesoscopic system rather than by an externally imposed bias. After a brief review of other mechanisms which produce a dc current from an ac excitation, measurements of adiabatic pumping are presented. The pumped current (or voltage) is sinusoidal in the phase difference between the two ac voltages deforming the dot potential and fluctuates in both magnitude and direction with small changes in external parameters such as magnetic field. Dependencies of pumping on the strength of the deformations, temperature, and breaking of time-reversal symmetry are also investigated.

  9. Multiple Exciton Generation in PbSe Quantum Dots and Quantum Dot Solar Cells

    SciTech Connect

    Beard, M. C.; Semonin, O. E.; Nozik, A. J.; Midgett, A. G.; Luther, J. M.

    2012-01-01

    Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by channeling the excess photon energy (energy greater than the bandgap) to produce multiple electron-hole pairs. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot-excitons in bulk semiconductors. We have demonstrated that MEG in PbSe QDs is about two times as efficient at producing multiple electron-hole pairs than bulk PbSe. I will discuss our recent results investigating MEG in PbSe, PbS and PbSxSe1-x, which exhibits an interesting size-dependence of the MEG efficiency. Thin films of electronically coupled PbSe QDs have shown promise in simple photon-to-electron conversion architectures with power conversion efficiencies above 5%. We recently reported an enhancement in the photocurrent resulting from MEG in PbSe QD-based solar cells. We find that the external quantum efficiency (spectrally resolved ratio of collected charge carriers to incident photons) peaked at 114% in the best devices measured, with an internal quantum efficiency of 130%. These results demonstrate that MEG charge carriers can be collected in suitably designed QD solar cells. We compare our results to transient absorption measurements and find reasonable agreement.

  10. Ultrafast optical control of individual quantum dot spin qubits.

    PubMed

    De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

    2013-09-01

    Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled

  11. Ultrafast optical control of individual quantum dot spin qubits.

    PubMed

    De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

    2013-09-01

    Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled

  12. Detection of CdSe quantum dot photoluminescence for security label on paper

    NASA Astrophysics Data System (ADS)

    Isnaeni, Sugiarto, Iyon Titok; Bilqis, Ratu; Suseno, Jatmiko Endro

    2016-02-01

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word 'RAHASIA'. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  13. Hard chaos, quantum billiards, and quantum dot computers

    SciTech Connect

    Mainieri, R.; Cvitanovic, P.; Hasslacher, B.

    1996-07-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Research was performed in analytic and computational techniques for dealing with hard chaos, especially the powerful tool of cycle expansions. This work has direct application to the understanding of electrons in nanodevices, such as junctions of quantum wires, or in arrays of dots or antidots. We developed a series of techniques for computing the properties of quantum systems with hard chaos, in particular the flow of electrons through nanodevices. These techniques are providing the insight and tools to design computers with nanoscale components. Recent efforts concentrated on understanding the effects of noise and orbit pruning in chaotic dynamical systems. We showed that most complicated chaotic systems (not just those equivalent to a finite shift) will develop branch points in their cycle expansion. Once the singularity is known to exist, it can be removed with a dramatic increase in the speed of convergence of quantities of physical interest.

  14. InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique

    SciTech Connect

    Piskorska, E.; Siebert, M.; Schmidt, T.; Falta, J.; Yamaguchi, T.; Hommel, D.; Renevier, H.

    2007-04-10

    Local chemical composition of InGaN quantum dots grown by molecular-beam epitaxy on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms in different positions in the dots, as well as the local elastic relaxation state.

  15. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  16. Detection of viral infections using colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Bentzen, Elizabeth L.; House, Frances S.; Utley, Thomas J.; Crowe, James E., Jr.; Wright, David W.

    2006-02-01

    Fluorescence is a tool widely employed in biological assays. Fluorescent semiconducting nanocrystals, quantum dots (QDs), are beginning to find their way into the tool box of many biologist, chemist and biochemist. These quantum dots are an attractive alternative to the traditional organic dyes due to their broad excitation spectra, narrow emission spectra and photostability. Quantum dots were used to detect and monitor the progession of viral glycoproteins, F (fusion) and G (attachment), from Respiratory Syncytial Virus (RSV) in HEp-2 cells. Additionally, oligo-Qdot RNA probes have been developed for identification and detection of mRNA of the N(nucleocapsid) protein for RSV. The use of quantum dot-FISH probes provides another confirmatory route to diagnostics as well as a new class of probes for monitoring the flux and fate of viral RNA RSV is the most common cause of lower respiratory tract infection in children worldwide and the most common cause of hospitalization of infants in the US. Antiviral therapy is available for treatment of RSV but is only effective if given within the first 48 hours of infection. Existing test methods require a virus level of at least 1000-fold of the amount needed for infection of most children and require several days to weeks to obtain results. The use of quantum dots may provide an early, rapid method for detection and provide insight into the trafficking of viral proteins during the course of infection.

  17. Periodic Scarred States in Open Quantum Dots as Evidence of Quantum Darwinism

    NASA Astrophysics Data System (ADS)

    Burke, A. M.; Akis, R.; Day, T. E.; Speyer, Gil; Ferry, D. K.; Bennett, B. R.

    2010-04-01

    Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

  18. Periodic scarred States in open quantum dots as evidence of quantum Darwinism.

    PubMed

    Burke, A M; Akis, R; Day, T E; Speyer, Gil; Ferry, D K; Bennett, B R

    2010-04-30

    Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

  19. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    DOEpatents

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  20. Biosensing with Quantum Dots: A Microfluidic Approach

    PubMed Central

    Vannoy, Charles H.; Tavares, Anthony J.; Noor, M. Omair; Uddayasankar, Uvaraj; Krull, Ulrich J.

    2011-01-01

    Semiconductor quantum dots (QDs) have served as the basis for signal development in a variety of biosensing technologies and in applications using bioprobes. The use of QDs as physical platforms to develop biosensors and bioprobes has attracted considerable interest. This is largely due to the unique optical properties of QDs that make them excellent choices as donors in fluorescence resonance energy transfer (FRET) and well suited for optical multiplexing. The large majority of QD-based bioprobe and biosensing technologies that have been described operate in bulk solution environments, where selective binding events at the surface of QDs are often associated with relatively long periods to reach a steady-state signal. An alternative approach to the design of biosensor architectures may be provided by a microfluidic system (MFS). A MFS is able to integrate chemical and biological processes into a single platform and allows for manipulation of flow conditions to achieve, by sample transport and mixing, reaction rates that are not entirely diffusion controlled. Integrating assays in a MFS provides numerous additional advantages, which include the use of very small amounts of reagents and samples, possible sample processing before detection, ultra-high sensitivity, high throughput, short analysis time, and in situ monitoring. Herein, a comprehensive review is provided that addresses the key concepts and applications of QD-based microfluidic biosensors with an added emphasis on how this combination of technologies provides for innovations in bioassay designs. Examples from the literature are used to highlight the many advantages of biosensing in a MFS and illustrate the versatility that such a platform offers in the design strategy. PMID:22163723

  1. Diamond LED substrate and novel quantum dots.

    PubMed

    Sung, James C; Sung, Michael

    2009-02-01

    Nitride LED (e.g., GaN) has become the mainstream of blue light source. The blue light can be converted to white light by exciting a phosphor (e.g., Nichia's YAG or Osram's TAG) with the complementary yellow emission. However, GaN is typically deposited on sapphire (Al2O3) substrates formed by crystal pulling or hexagonal (e.g., 4 H or 6 H) SiC wafers condensed from SiC vapor. In either case, the nitride lattice is ridden (e.g., 10(9)/cm2) with dislocations. The high dislocation density with sapphire is due to the large (>13%) lattice mismatch; and with hexagonal SiC, because of intrinsic defects. Cubic (beta) SiC may be deposited epitaxially using a CVD reactor onto silicon wafer by diffusing the interface and by chemical gradation. A reactive echant (e.g., hydrogen or fluorine) can be introduced periodically to gasify mis-aligned atoms. In this case, large single crystal wafers would be available for the manufacture of high bright LED with superb electro-optical efficiency. The SiC wafer may be coated with diamond film that can eliminate heat in real time. As a result of lower temperature, the nitride LED can be brighter and it will last longer. The blue light of GaN LED formed on SiC on Diamond (SiCON) LED may also be scattered by using novel quantum dots (e.g., 33 atom pairs of CdSe) to form a broad yellow light that blend in with the original blue light to form sunlight-like white light. This would be the ideal source for general illumination (e.g., for indoor) or backlighting (e.g., for LCD). PMID:19441383

  2. Toxicity of Oxidatively Degraded Quantum Dots

    PubMed Central

    Wiecinski, Paige N.; Metz, Kevin M.; King Heiden, Tisha C.; Louis, Kacie M.; Mangham, Andrew N.; Hamers, Robert J.; Heideman, Warren; Peterson, Richard E.; Pedersen, Joel A.

    2014-01-01

    Once released into the environment, engineered nanoparticles (eNPs) are subjected to processes that may alter their physical or chemical properties, potentially altering their toxicity vis-à-vis the as-synthesized materials. We examined the toxicity to zebrafish embryos of CdSecore/ZnSshell quantum dots (QDs) before and after exposure to an in vitro chemical model designed to simulate oxidative weathering in soil environments based on a reductant-driven Fenton’s reaction. Exposure to these oxidative conditions resulted in severe degradation of the QDs: the Zn shell eroded, Cd2+ and selenium were released, and amorphous Se-containing aggregates were formed. Weathered QDs exhibited higher potency than did as-synthesized QDs. Morphological endpoints of toxicity included pericardial, ocular and yolk sac edema, non-depleted yolk, spinal curvature, tail malformations, and craniofacial malformations. To better understand the selenium-like toxicity observed in QD exposures, we examined the toxicity of selenite, selenate and amorphous selenium nanoparticles (SeNPs). Selenite exposures resulted in high mortality to embryos/larvae while selenate and SeNPs were non-toxic. Co-exposures to SeNPs + CdCl2 resulted in dramatic increase in mortality and recapitulated the morphological endpoints of toxicity observed with weathered QD exposures. Cadmium body burden was increased in larvae exposed to weathered QDs or SeNP + CdCl2 suggesting the increased potency of weathered QDs was due to selenium modulation of cadmium toxicity. Our findings highlight the need to examine the toxicity of eNPs after they have undergone environmental weathering processes. PMID:23815598

  3. Diamond LED substrate and novel quantum dots.

    PubMed

    Sung, James C; Sung, Michael

    2009-02-01

    Nitride LED (e.g., GaN) has become the mainstream of blue light source. The blue light can be converted to white light by exciting a phosphor (e.g., Nichia's YAG or Osram's TAG) with the complementary yellow emission. However, GaN is typically deposited on sapphire (Al2O3) substrates formed by crystal pulling or hexagonal (e.g., 4 H or 6 H) SiC wafers condensed from SiC vapor. In either case, the nitride lattice is ridden (e.g., 10(9)/cm2) with dislocations. The high dislocation density with sapphire is due to the large (>13%) lattice mismatch; and with hexagonal SiC, because of intrinsic defects. Cubic (beta) SiC may be deposited epitaxially using a CVD reactor onto silicon wafer by diffusing the interface and by chemical gradation. A reactive echant (e.g., hydrogen or fluorine) can be introduced periodically to gasify mis-aligned atoms. In this case, large single crystal wafers would be available for the manufacture of high bright LED with superb electro-optical efficiency. The SiC wafer may be coated with diamond film that can eliminate heat in real time. As a result of lower temperature, the nitride LED can be brighter and it will last longer. The blue light of GaN LED formed on SiC on Diamond (SiCON) LED may also be scattered by using novel quantum dots (e.g., 33 atom pairs of CdSe) to form a broad yellow light that blend in with the original blue light to form sunlight-like white light. This would be the ideal source for general illumination (e.g., for indoor) or backlighting (e.g., for LCD).

  4. Correlation and current anomalies in helical quantum dots

    NASA Astrophysics Data System (ADS)

    De Beule, C.; Ziani, N. Traverso; Zarenia, M.; Partoens, B.; Trauzettel, B.

    2016-10-01

    We theoretically investigate the ground-state properties of a quantum dot defined on the surface of a strong three-dimensional time-reversal invariant topological insulator. Confinement is realized by ferromagnetic barriers and Coulomb interaction is treated numerically for up to seven electrons in the dot. Experimentally relevant intermediate interaction strengths are considered. The topological origin of the dot has several consequences: (i) spin polarization increases and the ground state exhibits quantum phase transitions at specific angular momenta as a function of interaction strength, (ii) the onset of Wigner correlations takes place mainly in one spin channel, and (iii) the ground state is characterized by a robust persistent current that changes sign as a function of the distance from the center of the dot.

  5. Statistical analysis of AFM topographic images of self-assembled quantum dots

    SciTech Connect

    Sevriuk, V. A.; Brunkov, P. N. Shalnev, I. V.; Gutkin, A. A.; Klimko, G. V.; Gronin, S. V.; Sorokin, S. V.; Konnikov, S. G.

    2013-07-15

    To obtain statistical data on quantum-dot sizes, AFM topographic images of the substrate on which the dots under study are grown are analyzed. Due to the nonideality of the substrate containing height differences on the order of the size of nanoparticles at distances of 1-10 {mu}m and the insufficient resolution of closely arranged dots due to the finite curvature radius of the AFM probe, automation of the statistical analysis of their large dot array requires special techniques for processing topographic images to eliminate the loss of a particle fraction during conventional processing. As such a technique, convolution of the initial matrix of the AFM image with a specially selected matrix is used. This makes it possible to determine the position of each nanoparticle and, using the initial matrix, to measure their geometrical parameters. The results of statistical analysis by this method of self-assembled InAs quantum dots formed on the surface of an AlGaAs epitaxial layer are presented. It is shown that their concentration, average size, and half-width of height distribution depend strongly on the In flow and total amount of deposited InAs which are varied within insignificant limits.

  6. Silicon quantum dots for optical applications

    NASA Astrophysics Data System (ADS)

    Wu, Jeslin J.

    Luminescent silicon quantum dots (SiQDs) are emerging as attractive materials for optoelectronic devices, third generation photovoltaics, and bioimaging. Their applicability in the real world is contingent on their optical properties and long-term environmental stability; and in biological applications, factors such as water solubility and toxicity must also be taken into consideration. The aforementioned properties are highly dependent on the QDs' surface chemistry. In this work, SiQDs were engineered for the respective applications using liquid-phase and gas-phase functionalization techniques. Preliminary work in luminescent downshifting for photovoltaic systems are also reported. Highly luminescent SiQDs were fabricated by grafting unsaturated hydrocarbons onto the surface of hydrogen-terminated SiQDs via thermal and photochemical hydrosilylation. An industrially attractive, all gas-phase, nonthermal plasma synthesis, passivation (aided by photochemical reactions), and deposition process was also developed to reduce solvent waste. With photoluminescence quantum yields (PLQYs) nearing 60 %, the alkyl-terminated QDs are attractive materials for optical applications. The functionalized SiQDs also exhibited enhanced thermal stability as compared to their unfunctionalized counterparts, and the photochemically-hydrosilylated QDs further displayed photostability under UV irradiation. These environmentally-stable SiQDs were used as luminescent downshifting layers in photovoltaic systems, which led to enhancements in the blue photoresponse of heterojunction solar cells. Furthermore, the QD films demonstrated antireflective properties, improving the coupling efficiency of sunlight into the cell. For biological applications, oxide, amine, or hydroxyl groups were grafted onto the surface to create water-soluble SiQDs. Luminescent, water-soluble SiQDs were produced in by microplasma treating the QDs in water. Stable QYs exceeding 50 % were obtained. Radical-based and

  7. A Quantum Dot with Spin-Orbit Interaction--Analytical Solution

    ERIC Educational Resources Information Center

    Basu, B.; Roy, B.

    2009-01-01

    The practical applicability of a semiconductor quantum dot with spin-orbit interaction gives an impetus to study analytical solutions to one- and two-electron quantum dots with or without a magnetic field.

  8. Colloidal quantum dot solids for solution-processed solar cells

    NASA Astrophysics Data System (ADS)

    Yuan, Mingjian; Liu, Mengxia; Sargent, Edward H.

    2016-03-01

    Solution-processed photovoltaic technologies represent a promising way to reduce the cost and increase the efficiency of solar energy harvesting. Among these, colloidal semiconductor quantum dot photovoltaics have the advantage of a spectrally tuneable infrared bandgap, which enables use in multi-junction cells, as well as the benefit of generating and harvesting multiple charge carrier pairs per absorbed photon. Here we review recent progress in colloidal quantum dot photovoltaics, focusing on three fronts. First, we examine strategies to manage the abundant surfaces of quantum dots, strategies that have led to progress in the removal of electronic trap states. Second, we consider new device architectures that have improved device performance to certified efficiencies of 10.6%. Third, we focus on progress in solution-phase chemical processing, such as spray-coating and centrifugal casting, which has led to the demonstration of manufacturing-ready process technologies.

  9. Charge transfer magnetoexciton formation at vertically coupled quantum dots.

    PubMed

    Gutiérrez, Willian; Marin, Jairo H; Mikhailov, Ilia D

    2012-01-01

    A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots' dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted. PMID:23092373

  10. Colloidal Quantum Dot Photovoltaics Enhanced by Perovskite Shelling.

    PubMed

    Yang, Zhenyu; Janmohamed, Alyf; Lan, Xinzheng; García de Arquer, F Pelayo; Voznyy, Oleksandr; Yassitepe, Emre; Kim, Gi-Hwan; Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Sargent, Edward H

    2015-11-11

    Solution-processed quantum dots are a promising material for large-scale, low-cost solar cell applications. New device architectures and improved passivation have been instrumental in increasing the performance of quantum dot photovoltaic devices. Here we report photovoltaic devices based on inks of quantum dot on which we grow thin perovskite shells in solid-state films. Passivation using the perovskite was achieved using a facile solution ligand exchange followed by postannealing. The resulting hybrid nanostructure created a more intrinsic CQD film, which, when incorporated into a photovoltaic device with graded bandstructure, achieved a record solar cell performance for single-step-deposited CQD films, exhibiting an AM1.5 solar power conversion efficiency of 8.95%.

  11. Charge transport and localization in atomically coherent quantum dot solids

    NASA Astrophysics Data System (ADS)

    Whitham, Kevin; Yang, Jun; Savitzky, Benjamin H.; Kourkoutis, Lena F.; Wise, Frank; Hanrath, Tobias

    2016-05-01

    Epitaxial attachment of quantum dots into ordered superlattices enables the synthesis of quasi-two-dimensional materials that theoretically exhibit features such as Dirac cones and topological states, and have major potential for unprecedented optoelectronic devices. Initial studies found that disorder in these structures causes localization of electrons within a few lattice constants, and highlight the critical need for precise structural characterization and systematic assessment of the effects of disorder on transport. Here we fabricated superlattices with the quantum dots registered to within a single atomic bond length (limited by the polydispersity of the quantum dot building blocks), but missing a fraction (20%) of the epitaxial connections. Calculations of the electronic structure including the measured disorder account for the electron localization inferred from transport measurements. The calculations also show that improvement of the epitaxial connections will lead to completely delocalized electrons and may enable the observation of the remarkable properties predicted for these materials.

  12. Peptide linkers for the assembly of semiconductor quantum dot bioconjugates

    NASA Astrophysics Data System (ADS)

    Boeneman, Kelly; Mei, Bing C.; Deschamps, Jeffrey R.; Delehanty, James B.; Mattoussi, Hedi; Medintz, Igor

    2009-02-01

    The use of semiconductor luminescent quantum dots for the labeling of biomolecules is rapidly expanding, however it still requires facile methods to attach functional globular proteins to biologically optimized quantum dots. Here we discuss the development of controlled variable length peptidyl linkers to attach biomolecules to poly(ethylene) glycol (PEG) coated quantum dots for both in vitro and in vivo applications. The peptides chosen, β-sheets and alpha helices are appended to polyhistidine sequences and this allows for control of the ratio of peptide bioconjugated to QD and the distance from QD to the biomolecule. Recombinant DNA engineering, bacterial peptide expression and Ni-NTA purification of histidine labeled peptides are utilized to create the linkers. Peptide length is confirmed by in vitro fluorescent resonance energy transfer (FRET).

  13. Highly sensitive humidity sensing properties of carbon quantum dots films

    SciTech Connect

    Zhang, Xing; Ming, Hai; Liu, Ruihua; Han, Xiao; Kang, Zhenhui; Liu, Yang; Zhang, Yonglai

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► A humidity sensing device was fabricated based on carbon quantum dots (CQDs) films. ► The conductivity of the CQDs films shows a linear and rapid response to atmosphere humidity. ► The humidity sensing property was due to the hydrogen bonds between the functional groups on CQDs. -- Abstract: We reported the fabrication of a humidity sensing device based on carbon quantum dots (CQDs) film. The conductivity of the CQDs film has a linear and rapid response to relative humidity, providing the opportunity for the fabrication of humidity sensing devices. The mechanism of our humidity sensor was proposed to be the formation of hydrogen bonds between carbon quantum dots and water molecules in the humidity environment, which significantly promote the electrons migration. In a control experiment, this hypothesis was confirmed by comparing the humidity sensitivity of candle soot (i.e. carbon nanoparticles) with and without oxygen containing groups on the surfaces.

  14. Kondo and Majorana doublet interactions in quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Younghyun; Liu, Dong E.; Gaidamauskas, Erikas; Paaske, Jens; Flensberg, Karsten; Lutchyn, Roman

    We study the properties of a quantum dot coupled to a normal lead and a time-reversal topological superconductor with Majorana Kramers pair at the end. We explore the phase diagram of the system as a function of Kondo and Majorana-induced coupling strengths using perturbative renormalization group study and slave-boson mean-field theory. We find that, in the presence of coupling between a quantum dot and a Majorana doublet, the system flows to a new fixed point controlled by the Majorana doublet, rather than the Kondo coupling, which is characterized by correlations between a localized spin and the fermion parity of each spin sector of the topological superconductor. We find that this fixed point is stable with respect to Gaussian fluctuations. We also investigate the effect of spin-spin interaction between a quantum dot and Majorana doublet and compare the result with a case where a normal lead is directly coupled to Majorana doublet.

  15. Gate-controlled electron spins in quantum dots

    SciTech Connect

    Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis L.

    2013-12-16

    In this paper we study the properties of anisotropic semiconductor quantum dots (QDs) formed in the conduction band in the presence of the magnetic field. The Kane-type model is formulated and is analyzed by using both analytical and finite element techniques. Among other things, we demonstrate that in such quantum dots, the electron spin states in the phonon-induced spin-flip rate can be manipulated with the application of externally applied anisotropic gate potentials. More precisely, such potentials enhance the spin flip rates and reduce the level crossing points to lower quantum dot radii. This happens due to the suppression of the g-factor towards bulk crystal. We conclude that the phonon induced spin-flip rate can be controlled through the application of spin-orbit coupling. Numerical examples are shown to demonstrate these findings.

  16. Neutral and charged biexciton-exciton cascade in near-telecom-wavelength quantum dots

    NASA Astrophysics Data System (ADS)

    Kettler, Jan; Paul, Matthias; Olbrich, Fabian; Zeuner, Katharina; Jetter, Michael; Michler, Peter; Florian, Matthias; Carmesin, Christian; Jahnke, Frank

    2016-07-01

    We investigate the cascaded emission of photons from low-density InGaAs/GaAs quantum dots grown by metal-organic vapor-phase epitaxy that are intentionally redshifted toward telecommunication wavelengths. We observe multiple radiative cascades within a single quantum dot and attribute these to neutral and charged excited configurations. The corresponding transitions are identified by combining microphotoluminescence and photon correlation measurements. Full-configuration interaction calculations further support the identification of the emission lines and provide additional information about the confinement of electron and hole wave functions. We apply a Monte Carlo simulation to estimate the effective spin scattering rates between excited triplet and singlet ground states of the negatively charged trion. These spin-flip processes directly affect the observed radiative cascade.

  17. Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

    SciTech Connect

    Haughn, C. R.; Chen, E. Y.; Zide, J. M. O.; Doty, M. F.; Steenbergen, E. H.; Bissell, L. J.; Eyink, K. G.

    2014-09-08

    Erbium arsenide (ErAs) is a semi-metallic material that self-assembles into nanoparticles when grown in GaAs via molecular beam epitaxy. We use steady-state and time-resolved photoluminescence to examine the mechanism of carrier transfer between indium arsenide (InAs) quantum dots and ErAs nanoparticles in a GaAs host. We probe the electronic structure of the ErAs metal nanoparticles (MNPs) and the optoelectronic properties of the nanocomposite and show that the carrier transfer rates are independent of pump intensity. This result suggests that the ErAs MNPs have a continuous density of states and effectively act as traps. The absence of a temperature dependence tells us that carrier transfer from the InAs quantum dots to ErAs MNPs is not phonon assisted. We show that the measured photoluminescence decay rates are consistent with a carrier tunneling model.

  18. Quantum Dots in H1 Photonic Crystal Microcavities for Quantum Information

    NASA Astrophysics Data System (ADS)

    Hagemeier, Jenna; Bonato, Cristian; Truong, Tuan-Anh; Kim, Hyochul; Bakker, Morten; Beirne, Gareth J.; van Exter, Martin P.; Petroff, Pierre; Bouwmeester, Dirk

    2013-03-01

    Coupling semiconductor quantum dots to optical microcavities is a promising technique for implementing quantum information processing protocols in the solid-state. By placing one or more emitters in a cavity, it is possible to create an efficient source of single photons or to explore collective interactions of few-emitter systems. Our devices consist of two layers of quantum dots, embedded in the cavity region of H1 photonic crystal microcavities. One of the quantum dot layers can be frequency-tuned deterministically, allowing two resonant quantum dots to be coupled to a single cavity mode. Because good mode-matching between the cavity mode and the input/output channel is necessary for many applications, we optimize the far-field profiles of our H1 cavities and demonstrate strong enhancement of the external mode matching properties. We will discuss our far-field optimization results as well as our ongoing work to study interactions of multiple emitters in a cavity.

  19. QCAD simulation and optimization of semiconductor double quantum dots

    SciTech Connect

    Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson

    2013-12-01

    We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design

  20. Quantum transport through the system of parallel quantum dots with Majorana bound states

    SciTech Connect

    Wang, Ning; Li, Yuxian; Lv, Shuhui

    2014-02-28

    We study the tunneling transport properties through a system of parallel quantum dots which are coupled to Majorana bound states (MBSs). The conductance and spectral function are computed using the retarded Green's function method based on the equation of motion. The conductance of the system is 2e{sup 2}/h at zero Fermi energy and is robust against the coupling between the MBSs and the quantum dots. The dependence of the Fermi energy on the spectral function is different for the first dot (dot1) than for the second dot (dot2) with fixed dot2-MBSs coupling. The influence of the Majorana bound states on the spectral function was studied for the series and parallel configurations of the system. It was found that when the configuration is in series, the Majorana bound states play an important role, resulting in a spectral function with three peaks. However, the spectral function shows two peaks when the system is in a parallel configuration. The zero Fermi energy spectral function is always 1/2 not only in series but also in the parallel configuration and robust against the coupling between the MBSs and the quantum dots. The phase diagram of the Fermi energy versus the quantum dot energy levels was also investigated.

  1. Are quantum dots in unexpected locations due to strain?

    NASA Astrophysics Data System (ADS)

    Zimmerman, Neil; Thorbeck, Ted

    It is a fairly common occurrence that, in top-gated Si quantum dots, the dots appear in reproducible but unexpected positions. For instance, sometimes a group will make gates in order to electrostatically generate tunnel barriers, but discover that the quantum dot is formed underneath the gate rather than between two barrier gates. We will discuss the possibility that such quantum dots arise from the mechanical strain induced by the gate. The model is simple: i) We simulate metal or polysilicon gates on top of a Si/SiO2 wafer, and calculate the stress and strain from differential thermal contraction of the materials; ii) Using the fact that the energy of the Si conduction band depends on strain through the deformation potential, we then convert the strain modulation to a potential energy modulation. As an example, we find that, for a single Al gate, there is a potential well directly underneath the gate with the size of a few meV, in agreement with recent experimental results. We also show that polysilicon gates will not produce such strain-induced quantum dots.

  2. Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

    PubMed Central

    Chou, Kenny F.; Dennis, Allison M.

    2015-01-01

    Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting. PMID:26057041

  3. Quantum Dots in a Polymer Composite: A Convenient Particle-in-a-Box Laboratory Experiment

    ERIC Educational Resources Information Center

    Rice, Charles V.; Giffin, Guinevere A.

    2008-01-01

    Semiconductor quantum dots are at the forefront of materials science chemistry with applications in biological imaging and photovoltaic technologies. We have developed a simple laboratory experiment to measure the quantum-dot size from fluorescence spectra. A major roadblock of quantum-dot based exercises is the particle synthesis and handling;…

  4. Self-organized formation of quantum dots of a material on a substrate

    DOEpatents

    Zhang, Zhenyu; Wendelken, John F.; Chang, Ming-Che; Pai, Woei Wu

    2001-01-01

    Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

  5. Static gain saturation in quantum dot semiconductor optical amplifiers.

    PubMed

    Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter

    2008-05-26

    Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.

  6. Reentrant formation of magnetic polarons in quantum dots

    NASA Astrophysics Data System (ADS)

    Pientka, J. M.; Oszwałdowski, R.; Petukhov, A. G.; Han, J. E.; Žutić, Igor

    2012-10-01

    We propose a model of magnetic polaron formation in semiconductor quantum dots doped with magnetic ions. A wetting layer serves as a reservoir of photogenerated holes, which can be trapped by the adjacent quantum dots. For certain hole densities, the temperature dependence of the magnetization induced by the trapped holes is reentrant: it disappears for some temperature range and reappears at higher temperatures. We demonstrate that this peculiar effect is not an artifact of the mean-field approximation and persists after statistical spin fluctuations are accounted for. We predict fingerprints of reentrant magnetic polarons in photoluminescence spectra.

  7. Voltage-controlled slow light in asymmetry double quantum dots

    NASA Astrophysics Data System (ADS)

    Yuan, Chun-Hua; Zhu, Ka-Di

    2006-07-01

    The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits/s optical network, numerical calculation infers group velocity as low as 300m/s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.

  8. Quantum Dots: Proteomics characterization of the impact on biological systems

    NASA Astrophysics Data System (ADS)

    Pozzi-Mucelli, Stefano; Boschi, F.; Calderan, L.; Sbarbati, A.; Osculati, F.

    2009-05-01

    Over the past few years, Quantum Dots have been tested in most biotechnological applications that use fluorescence, including DNA array technology, immunofluorescence assays, cell and animal biology. Quantum Dots tend to be brighter than conventional dyes, because of the compounded effects of extinction coefficients that are an order of magnitude larger than those of most dyes. Their main advantage resides in their resistance to bleaching over long periods of time (minutes to hours), allowing the acquisition of images that are crisp and well contrasted. This increased photostability is especially useful for three-dimensional (3D) optical sectioning, where a major issue is bleaching of fluorophores during acquisition of successive z-sections, which compromises the correct reconstruction of 3D structures. The long-term stability and brightness of Quantum Dots make them ideal candidates also for live animal targeting and imaging. The vast majority of the papers published to date have shown no relevant effects on cells viability at the concentration used for imaging applications; higher concentrations, however, caused some issues on embryonic development. Adverse effects are due to be caused by the release of cadmium, as surface PEGylation of the Quantum Dots reduces these issues. A recently published paper shows evidences of an epigenetic effect of Quantum Dots treatment, with general histones hypoacetylation, and a translocation to the nucleus of p53. In this study, mice treated with Quantum Dots for imaging purposes were analyzed to investigate the impact on protein expression and networking. Differential mono-and bidimensional electrophoresis assays were performed, with the individuation of differentially expressed proteins after intravenous injection and imaging analysis; further, as several authors indicate an increase in reactive oxygen species as a possible mean of damage due to the Quantum Dots treatment, we investigated the signalling pathway of APE1/Ref1, a

  9. Entanglement dynamics of photon pairs emitted from quantum dots

    SciTech Connect

    Zou, Yang; Gong, Ming; Li, Chuan-Feng; Chen, Geng; Tang, Jian-Shun; Guo, Guang-Can

    2010-06-15

    We present a model that describes states of photon pairs, which have been generated by biexciton cascade decays of self-assembled quantum dots, the use of which yields a finding that agrees well with the experimental result. Furthermore, we calculate the concurrence and determine the temperature behavior associated with the so-called entanglement sudden death that prevents quantum dots emitting entangled photon pairs at raised temperatures. The relationship between the fine-structure splitting and the sudden death temperature is also provided.

  10. Quantum-dot based nanothermometry in optical plasmonic recording media

    SciTech Connect

    Maestro, Laura Martinez; Zhang, Qiming; Li, Xiangping; Gu, Min; Jaque, Daniel

    2014-11-03

    We report on the direct experimental determination of the temperature increment caused by laser irradiation in a optical recording media constituted by a polymeric film in which gold nanorods have been incorporated. The incorporation of CdSe quantum dots in the recording media allowed for single beam thermal reading of the on-focus temperature from a simple analysis of the two-photon excited fluorescence of quantum dots. Experimental results have been compared with numerical simulations revealing an excellent agreement and opening a promising avenue for further understanding and optimization of optical writing processes and media.

  11. Lateral photoconductivity in structures with Ge/Si quantum dots

    SciTech Connect

    Panevin, V. Yu. Sofronov, A. N.; Vorobjev, L. E.; Firsov, D. A.; Shalygin, V. A.; Vinnichenko, M. Ya.; Balagula, R. M.; Tonkikh, A. A.; Werner, P.; Fuhrman, B.; Schmidt, G.

    2013-12-15

    The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.

  12. A high-efficiency double quantum dot heat engine

    NASA Astrophysics Data System (ADS)

    Liu, Y. S.; Yang, X. F.; Hong, X. K.; Si, M. S.; Chi, F.; Guo, Y.

    2013-08-01

    High-efficiency heat engine requires a large output power at the cost of less input heat energy as possible. Here we propose a heat engine composed of serially connected two quantum dots sandwiched between two metallic electrodes. The efficiency of the heat engine can approach the maximum allowable Carnot efficiency ηC. We also find that the strong intradot Coulomb interaction can induce additional work regions for the heat engine, whereas the interdot Coulomb interaction always suppresses the efficiency. Our results presented here indicate a way to fabricate high-efficiency quantum-dot thermoelectric devices.

  13. Tunable optical properties of colloidal quantum dots in electrolytic environments.

    PubMed

    Ramadurai, D; Kohanpour, B; Alexson, D; Shi, P; Sethuraman, A; Li, Y; Saini, V; Dutta, M; Stroscio, M A

    2004-12-01

    The absorption spectra of colloidal cadmium sulfide quantum dots in electrolytic solutions are found to manifest a shift in the absorption threshold as the concentration of the electrolyte is varied. These results are consistent with a shift in the absorption threshold that would be caused by electrolytic screening of the field caused by the intrinsic spontaneous polarisation of these würtzite structured quantum dots. These electrolyte-dependent absorption properties provide a potential means of gaining insights on the variable extracellular and intracellular electrolytic concentrations that are present in biological systems.

  14. Overview of Stabilizing Ligands for Biocompatible Quantum Dot Nanocrystals

    PubMed Central

    Zhang, Yanjie; Clapp, Aaron

    2011-01-01

    Luminescent colloidal quantum dots (QDs) possess numerous advantages as fluorophores in biological applications. However, a principal challenge is how to retain the desirable optical properties of quantum dots in aqueous media while maintaining biocompatibility. Because QD photophysical properties are directly related to surface states, it is critical to control the surface chemistry that renders QDs biocompatible while maintaining electronic passivation. For more than a decade, investigators have used diverse strategies for altering the QD surface. This review summarizes the most successful approaches for preparing biocompatible QDs using various chemical ligands. PMID:22247651

  15. Polaritons in a nonideal array of ultracold quantum dots

    NASA Astrophysics Data System (ADS)

    Rumyantsev, V. V.; Fedorov, S. A.; Gumennyk, K. V.

    2016-05-01

    We develop a numerical model for a defect-containing square lattice of microcavities with embedded ultracold atomic clusters (quantum dots). It is assumed that certain fractions of quantum dots and cavities are absent, which leads to transformation of polariton spectrum of the overall structure. The dispersion relations for polaritonic modes are derived as functions of defect concentrations and on this basis the band gap, the effective masses of lower and upper dispersion branch polaritons as well as their densities of states are evaluated.

  16. Si quantum dots in silicon nitride: Quantum confinement and defects

    SciTech Connect

    Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  17. Si quantum dots in silicon nitride: Quantum confinement and defects

    NASA Astrophysics Data System (ADS)

    Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.

    2015-12-01

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.

  18. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    PubMed

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-01

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  19. Quantum chemistry of quantum dots: Effects of ligands and oxidation

    NASA Astrophysics Data System (ADS)

    Inerbaev, Talgat M.; Masunov, Artëm E.; Khondaker, Saiful I.; Dobrinescu, Alexandra; Plamadǎ, Andrei-Valentin; Kawazoe, Yoshiyuki

    2009-07-01

    We report Gaussian basis set density functional theory (DFT) calculations of the structure and spectra of several colloidal quantum dots (QDs) with a (CdSe)n core (n =6,15,17), that are either passivated by trimethylphosphine oxide ligands, or unpassivated and oxidized. From the ground state geometry optimization results we conclude that trimethylphosphine oxide ligands preserve the wurtzite structure of the QDs. Evaporation of the ligands may lead to surface reconstruction. We found that the number of two-coordinated atoms on the nanoparticle's surface is the critical parameter defining the optical absorption properties. For (CdSe)15 wurtzite-derived QD this number is maximal among all considered QDs and the optical absorption spectrum is strongly redshifted compared to QDs with threefold coordinated surface atoms. According to the time-dependent DFT results, surface reconstruction is accompanied by a significant decrease in the linear absorption. Oxidation of QDs destroys the perfection of the QD surface, increases the number of two-coordinated atoms and results in the appearance of an infrared absorption peak close to 700 nm. The vacant orbitals responsible for this near infrared transition have strong Se-O antibonding character. Conclusions of this study may be used in optimization of engineered nanoparticles for photodetectors and photovoltaic devices.

  20. Spin-valley physics in realistic silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Ruskov, Rusko; Tahan, Charles

    2014-03-01

    Silicon quantum dots are leading approach for solid-state quantum bits. However, one must contend with new physics due to the multi-valley nature of silicon. At a Si heterostructure interface the valley degeneracy is lifted and the different valley subspaces of the confined electron spin configurations do not interact. When, however, the valley states are brought at resonance in the presence of a non-ideal interface, spin-valley mixing can occur via spin-orbit coupling. Within the same theoretical framework, we can successfully describe the spin relaxation processes in non-ideal quantum dots [e.g., relaxation ``hot spots'' in C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, and A. S. Dzurak, Nature Comm. 4, 2069, (2013)] and a new electron spin resonance (ESR) anticrossing splitting in a double quantum dot transport experiment [X. Hao, R. Ruskov, M. Xiao, C. Tahan, and H. W. Jiang, work in preparation]. Understanding the spin-valley physics of inelastic tunneling is critical to a proper understanding of the transport through double quantum dots, with or without an ESR drive field.

  1. Photonic Enhancement of Colloidal Quantum Dot Photovoltaics

    NASA Astrophysics Data System (ADS)

    Labelle, Andre Jean-Romeo Richard

    Colloidal quantum dots, nanocrystal semiconductors that can be cross-linked and assembled into absorbing thin films, are an attractive material for third-generation photovoltaic applications due to low-cost fabrication and bandgap tunability. As a result of their limited charge transport, these solution-processed thin films suffer from a mismatch in absorption length and charge extraction length. Concepts based on the interdigitation of n- and p-doped layers, approaches that reduce the distance photogenerated carriers must travel before extraction, offer promise on overcoming this limitation. In this thesis, I explore and develop techniques to address the absorption-extraction compromise in CQD materials by implementing nano- and micro-structuring techniques to enhance light absorption in the active film. First, I focus on the development of nanomaterials for light guiding/scattering enhancement in CQD films. For this, I develop a nanostructured gold reflector that, when suitably designed, guides light and traps it within the active film. I show that this yields enhanced broadband absorption with more than 4-fold improvement at the most improved wavelength, which translated into a 34% improvement in photocurrent in a working solar cell. I also show that periodic nanostructures employed for absorption enhancement can lead to improvements in solar cell performance. Limitations in device architecture and film formation, however, prevented significant performance advances for these nano-scale approaches. Regardless, these early results pointed me to a new and more impactful strategy. I focus in on realizing micron-scale structured electrodes to enhance absorption, which I show to be considerably more useful in view of the need to extract charge carriers with high efficiency. I discover that conformal film formation atop these structured electrodes is an absolute prerequisite to enhancing performance. These devices, which I term micro-pyramid CQD cells, provide a 24

  2. Persistent Inter-Excitonic Quantum Coherence in CdSe Quantum Dots

    PubMed Central

    Caram, Justin R.; Zheng, Haibin; Dahlberg, Peter D.; Rolczynski, Brian S.; Griffin, Graham B.; Fidler, Andrew F.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Engel, Gregory S.

    2014-01-01

    The creation and manipulation of quantum superpositions is a fundamental goal for the development of materials with novel optoelectronic properties. In this letter, we report persistent (~80 fs lifetime) quantum coherence between the 1S and 1P excitonic states in zinc-blende colloidal CdSe quantum dots at room temperature, measured using Two-Dimensional Electronic Spectroscopy. We demonstrate that this quantum coherence manifests as an intradot phenomenon, the frequency of which depends on the size of the dot excited within the ensemble of QDs. We model the lifetime of the coherence and demonstrate that correlated interexcitonic fluctuations preserve relative phase between excitonic states. These observations suggest an avenue for engineering long-lived interexcitonic quantum coherence in colloidal quantum dots. PMID:24719679

  3. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    PubMed Central

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  4. Deterministic photonic cluster state generation from quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Economou, Sophia; Gimeno-Segovia, Mercedes; Rudolph, Terry

    2014-03-01

    Currently, the most promising approach for photon-based quantum information processing is measurement-based, or one-way, quantum computing. In this scheme, a large entangled state of photons is prepared upfront and the computation is implemented with single-qubit measurements alone. Available approaches to generating the cluster state are probabilistic, which makes scalability challenging. We propose to generate the cluster state using a quantum dot molecule with one electron spin per quantum dot. The two spins are coupled by exchange interaction and are periodically pulsed to produce photons. We show that the entanglement created by free evolution between the spins is transferred to the emitted photons, and thus a 2D photonic ladder can be created. Our scheme only utilizes single-spin gates and measurement, and is thus fully consistent with available technology.

  5. Effective Hamiltonian for the hybrid double quantum dot qubit

    NASA Astrophysics Data System (ADS)

    Ferraro, E.; De Michielis, M.; Mazzeo, G.; Fanciulli, M.; Prati, E.

    2014-05-01

    Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single-qubit and two-qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behavior of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.

  6. Josephson ϕ0-junction in nanowire quantum dots

    NASA Astrophysics Data System (ADS)

    Szombati, D. B.; Nadj-Perge, S.; Car, D.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.

    2016-06-01

    The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier. This current is driven by a superconducting phase difference ϕ between the leads. In the presence of chiral and time-reversal symmetry of the Cooper pair tunnelling process, the current is strictly zero when ϕ vanishes. Only if these underlying symmetries are broken can the supercurrent for ϕ = 0 be finite. This corresponds to a ground state of the junction being offset by a phase ϕ0, different from 0 or π. Here, we report such a Josephson ϕ0-junction based on a nanowire quantum dot. We use a quantum interferometer device to investigate phase offsets and demonstrate that ϕ0 can be controlled by electrostatic gating. Our results may have far-reaching implications for superconducting flux- and phase-defined quantum bits as well as for exploring topological superconductivity in quantum dot systems.

  7. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    NASA Astrophysics Data System (ADS)

    Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J. D.

    2015-08-01

    Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  8. Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

    NASA Technical Reports Server (NTRS)

    Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

    2000-01-01

    Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

  9. Electronic ground state properties of Coulomb blockaded quantum dots

    NASA Astrophysics Data System (ADS)

    Patel, Satyadev Rajesh

    Conductance through quantum dots at low temperature exhibits random but repeatable fluctuations arising from quantum interference of electrons. The observed fluctuations follow universal statistics arising from the underlying universality of quantum chaos. Random matrix theory (RMT) has provided an accurate description of the observed universal conductance fluctuations (UCF) in "open" quantum dots (device conductance ≥e 2/h). The focus of this thesis is to search for and decipher the underlying origin of similar universal properties in "closed" quantum dots (device conductance ≤e2/ h). A series of experiments is presented on electronic ground state properties measured via conductance measurements in Coulomb blockaded quantum dots. The statistics of Coulomb blockade (CB) peak heights with zero and non-zero magnetic field measured in various devices agree qualitatively with predictions from Random Matrix Theory (RMT). The standard deviation of the peak height fluctuations for non-zero magnetic field is lower than predicted by RMT; the temperature dependence of the standard deviation of the peak height for non-zero magnetic field is also measured. The second experiment summarizes the statistics of CB peak spacings. The peak spacing distribution width is observed to be on the order of the single particle level spacing, Delta, for both zero and non-zero magnetic field. The ratio of the zero field peak spacing distribution width to the non-zero field peak spacing distribution width is ˜1.2; this is good agreement with predictions from spin-resolved RMT predictions. The standard deviation of the non-zero magnetic field peak spacing distribution width shows a T-1/2 dependence in agreement with a thermal averaging model. The final experiment summarizes the measurement of the peak height correlation length versus temperature for various quantum dots. The peak height correlation length versus temperature saturates in small quantum dots, suggesting spectral scrambling

  10. Nonclassical correlation of cascaded photon pairs emitted from quantum dots

    SciTech Connect

    Li, Chuan-Feng; Zou, Yang; Xu, Jin-Shi; Ge, Rong-Chun; Guo, Guang-Can

    2011-11-15

    We studied the quantum correlation of the photon pairs generated by biexciton cascade decays of self-assembled quantum dots, and determined the correlation sudden-change temperature, which is shown to be independent of the background noise, far lower than the entanglement sudden-death temperature, and therefore, easier to be observed in experiments. The relationship between the fine-structure splitting and the sudden-change temperature is also provided.

  11. Optical levitation of a microdroplet containing a single quantum dot.

    PubMed

    Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

    2015-03-15

    We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This Letter presents the realization of an optically levitated solid-state quantum emitter. PMID:25768143

  12. Inclusion of CdSe quantum dots on the P-doped emitter of Si solar cells.

    PubMed

    Choi, Jaeho; Parida, Bhaskar; Ji, Hyung Yong; Park, Seungil; Kim, Keunjoo

    2012-07-01

    We investigated Cadium Selenide quantum dots embedded in the Si solar cell in order to improve the efficiency of conventional Si solar cell. CdSe quantum dots with 3 to approximately 4 nm size were printed on the phospho-silicate glass layer grown over the emitter surface of p-n junction Si solar cells during the phosphorous diffusion process. Ohmic contact was formed by the contribution of nanoparticles at the Si emitter in spite of the existance of phospho-silicate glass layer. The enhanced light absorption due to the quantum dots was ranged from 500 to 600 nm where the CdSe nanodots have the corresponding emission wavelength of 560 nm. The efficiency of reference solar cell with the glass layer was measured to be 1.0% and it was increased to 12.72% for the reference sample without the glass layer. Furthermore, the efficiency of CdSe quantum dot sample was measured to be 13.6%. This indicates that the quantum dots play the roles of both the formation of tunneling channel and the enhancement of the light conversion efficiency in the visible spectral range.

  13. The photosensitivity of carbon quantum dots/CuAlO2 films composites

    NASA Astrophysics Data System (ADS)

    Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

    2015-07-01

    Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

  14. Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption

    NASA Astrophysics Data System (ADS)

    Zheng, Zerui; Ji, Haining; Yu, Peng; Wang, Zhiming

    2016-05-01

    Quantum dot solar cells, as a promising candidate for the next generation solar cell technology, have received tremendous attention in the last 10 years. Some recent developments in epitaxy growth and device structures have opened up new avenues for practical quantum dot solar cells. Unfortunately, the performance of quantum dot solar cells is often plagued by marginal photon absorption. In this review, we focus on the recent progress made in enhancing optical absorption in quantum dot solar cells, including optimization of quantum dot growth, improving the solar cells structure, and engineering light trapping techniques.

  15. Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption.

    PubMed

    Zheng, Zerui; Ji, Haining; Yu, Peng; Wang, Zhiming

    2016-12-01

    Quantum dot solar cells, as a promising candidate for the next generation solar cell technology, have received tremendous attention in the last 10 years. Some recent developments in epitaxy growth and device structures have opened up new avenues for practical quantum dot solar cells. Unfortunately, the performance of quantum dot solar cells is often plagued by marginal photon absorption. In this review, we focus on the recent progress made in enhancing optical absorption in quantum dot solar cells, including optimization of quantum dot growth, improving the solar cells structure, and engineering light trapping techniques.

  16. Molecular Spintronics: Wiring Spin Coherence between Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Ouyang, Min

    2004-03-01

    Semiconductor quantum dots (QDs) are attractive candidates for scalable solid state implementations of quantum information processing based on electron spin states, where a crucial requirement for practical devices is to have efficient and tunable spin coupling between them. We focus on recent femtosecond time-resolved Faraday rotation studies of self-assembled multilayer spintronic devices based on colloidal quantum dots bridged by conjugated molecules (M. Ouyang et al., Science 301, 1074 (2003)). The data reveal the instantaneous transfer of spin coherence through conjugated molecular bridges spanning quantum dots of different size over a broad range of temperature. The room temperature spin transfer efficiency exceeds 20%, which approximately doubles the value measured at T=4.5K. A molecular π-orbital mediated spin coherence transfer mechanism is proposed to provide a qualitative insight into the experimental observations, suggesting a correlation between the stereochemistry of molecules and the transfer process. The results show that conjugated molecules can be used not only as physical links for the assembly of functional networks, but also as efficient channels for shuttling quantum information. This class of structures may be useful as two-spin quantum devices operating at ambient temperatures and may offer promising opportunities for future versatile molecule-based spintronic technologies.

  17. Externally mode-matched cavity quantum electrodynamics with charge-tunable quantum dots.

    PubMed

    Rakher, M T; Stoltz, N G; Coldren, L A; Petroff, P M; Bouwmeester, D

    2009-03-01

    We present coherent reflection spectroscopy on a charge and dc Stark tunable quantum dot embedded in a high-quality and externally mode-matched microcavity. The addition of an exciton to a single-electron-charged quantum dot forms a trion that interacts with the microcavity just below the strong-coupling regime of cavity quantum electrodynamics. Such an integrated, monolithic system is a crucial step towards the implementation of scalable hybrid quantum-information schemes that are based on an efficient interaction between a single photon and a confined electron spin.

  18. Giant fifth-order nonlinearity via tunneling induced quantum interference in triple quantum dots

    SciTech Connect

    Tian, Si-Cong Tong, Cun-Zhu Ning, Yong-Qiang; Wan, Ren-Gang

    2015-02-15

    Schemes for giant fifth-order nonlinearity via tunneling in both linear and triangular triple quantum dots are proposed. In both configurations, the real part of the fifth-order nonlinearity can be greatly enhanced, and simultaneously the absorption is suppressed. The analytical expression and the dressed states of the system show that the two tunnelings between the neighboring quantum dots can induce quantum interference, resulting in the giant higher-order nonlinearity. The scheme proposed here may have important applications in quantum information processing at low light level.

  19. Nonradiative recombination of excitons in semimagnetic quantum dots

    SciTech Connect

    Chernenko, A. V.

    2015-12-15

    The mechanisms of the nonradiative recombination of excitons in neutral and charged quantum dots based on II–VI semimagnetic semiconductors are investigated. It is shown that, along with the dipole–dipole and direct-exchange mechanisms, there is one more mechanism referred to as the indirect-exchange mechanism and related to sp–d mixing. The selection rules for nonradiative recombination by exchange mechanisms are subsequently derived. The dependence of the efficiency of all recombination mechanisms on the quantum-dot size is studied. The experimentally observed growth in the intracenter photoluminescence intensity with decreasing size of dots and nanocrystals is accounted for. Methods for experimental determination of the contributions of different mechanisms to nonradiative recombination are discussed.

  20. Probing charge fluctuator correlations using quantum dot pairs

    NASA Astrophysics Data System (ADS)

    Purohit, V.; Braunecker, B.; Lovett, B. W.

    2015-06-01

    We study a pair of quantum dot exciton qubits interacting with a number of fluctuating charges that can induce a Stark shift of both exciton transition energies. We do this by solving the optical master equation using a numerical transfer matrix method. We find that the collective influence of the charge environment on the dots can be detected by measuring the correlation between the photons emitted when each dot is driven independently. Qubits in a common charge environment display photon bunching, if both dots are driven on resonance or if the driving laser detunings have the same sense for both qubits, and antibunching if the laser detunings have opposite signs. We also show that it is possible to detect several charges fluctuating at different rates using this technique. Our findings expand the possibility of measuring qubit dynamics in order to investigate the fundamental physics of the environmental noise that causes decoherence.

  1. Self-action effects in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Dneprovskii, V. S.; Kanev, A. R.; Kozlova, M. V.; Smirnov, A. M.

    2014-05-01

    Two-dimensional (2D) dynamic photonic crystal regime has been utilized to investigate self-diffraction effect and nonlinear optical properties of excitons in CdSe/ZnS colloidal quantum dots (QDs). Self-diffraction at 2D photonic crystal arises for three intersecting beams of Nd+3:YAG laser second harmonic in the case of one-photon resonant excitation of the exciton (electron - hole) transition QDs. The relaxation time of excited excitons has been measured by pump and probe technique at induced one-dimensional transient diffraction grating. Two-exponential decay with initial fast and slow parts was discovered. Self-action effect has been discovered in the case of stationary resonant excitation of excitons in CdSe/ZnS QDs by the beam of second harmonic of powerful 12-nanosecond laser pulses. The bleaching of exciton absorption and the creation of transparency channel (this effect provokes self-diffraction of the second harmonic beam) was explained by the dominating coexisting and competing processes of state filling in stationary excited quantum dots and Stark-shift of exciton spectral band. The peculiarities of the influence of these processes at the change of exciton absorption in quantum dots in the case of different detuning from exciton resonance (quantum dots with different size have been used) was analyzed.

  2. Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

    PubMed Central

    Li, Lijie; Jiang, Jian-Hua

    2016-01-01

    The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices. PMID:27550093

  3. Electronic Structure of Helium Atom in a Quantum Dot

    NASA Astrophysics Data System (ADS)

    Saha, Jayanta K.; Bhattacharyya, S.; Mukherjee, T. K.

    2016-03-01

    Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) (n = 1-6) states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns (n = 2-5) and 2pnp (n = 2-5) configurations of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential due to the quantum dot. It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here. TKM Gratefully Acknowledges Financial Support under Grant No. 37(3)/14/27/2014-BRNS from the Department of Atomic Energy, BRNS, Government of India. SB Acknowledges Financial Support under Grant No. PSW-160/14-15(ERO) from University Grants Commission, Government of India

  4. Quantum Dots for Live Cell and In Vivo Imaging

    PubMed Central

    Walling, Maureen A; Novak, Jennifer A; Shepard, Jason R. E

    2009-01-01

    In the past few decades, technology has made immeasurable strides to enable visualization, identification, and quantitation in biological systems. Many of these technological advancements are occurring on the nanometer scale, where multiple scientific disciplines are combining to create new materials with enhanced properties. The integration of inorganic synthetic methods with a size reduction to the nano-scale has lead to the creation of a new class of optical reporters, called quantum dots. These semiconductor quantum dot nanocrystals have emerged as an alternative to organic dyes and fluorescent proteins, and are brighter and more stable against photobleaching than standard fluorescent indicators. Quantum dots have tunable optical properties that have proved useful in a wide range of applications from multiplexed analysis such as DNA detection and cell sorting and tracking, to most recently demonstrating promise for in vivo imaging and diagnostics. This review provides an in-depth discussion of past, present, and future trends in quantum dot use with an emphasis on in vivo imaging and its related applications. PMID:19333416

  5. Application of zinc oxide quantum dots in food safety

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  6. Quantum dots trace lymphatic drainage from the mouse eye

    NASA Astrophysics Data System (ADS)

    Tam, Alex L. C.; Gupta, Neeru; Zhang, Zhexue; Yücel, Yeni H.

    2011-10-01

    Glaucoma is a leading cause of blindness in the world, often associated with elevated eye pressure. Currently, all glaucoma treatments aim to lower eye pressure by improving fluid exit from the eye. We recently reported the presence of lymphatics in the human eye. The lymphatic circulation is known to drain fluid from organ tissues and, as such, lymphatics may also play a role in draining fluid from the eye. We investigated whether lymphatic drainage from the eye is present in mice by visualizing the trajectory of quantum dots once injected into the eye. Whole-body hyperspectral fluorescence imaging was performed in 17 live mice. In vivo imaging was conducted prior to injection, and 5, 20, 40 and 70 min, and 2, 6 and 24 h after injection. A quantum dot signal was observed in the left neck region at 6 h after tracer injection into the eye. Examination of immunofluorescence-labelled sections using confocal microscopy showed the presence of a quantum dot signal in the left submandibular lymph node. This is the first direct evidence of lymphatic drainage from the mouse eye. The use of quantum dots to image this lymphatic pathway in vivo is a novel tool to stimulate new treatments to reduce eye pressure and prevent blindness from glaucoma.

  7. High-fidelity gates in quantum dot spin qubits.

    PubMed

    Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

    2013-12-01

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

  8. Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

    NASA Astrophysics Data System (ADS)

    Li, Lijie; Jiang, Jian-Hua

    2016-08-01

    The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices.

  9. Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power.

    PubMed

    Li, Lijie; Jiang, Jian-Hua

    2016-01-01

    The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices. PMID:27550093

  10. Kondo effect in coupled quantum dots: A noncrossing approximation study

    NASA Astrophysics Data System (ADS)

    Aguado, Ramón; Langreth, David C.

    2003-06-01

    The out-of-equilibrium transport properties of a double quantum dot system in the Kondo regime are studied theoretically by means of a two-impurity Anderson Hamiltonian with interimpurity hopping. The Hamiltonian, formulated in slave-boson language, is solved by means of a generalization of the noncrossing approximation (NCA) to the present problem. We provide benchmark calculations of the predictions of the NCA for the linear and nonlinear transport properties of coupled quantum dots in the Kondo regime. We give a series of predictions that can be observed experimentally in linear and nonlinear transport measurements through coupled quantum dots. Importantly, it is demonstrated that measurements of the differential conductance G=dI/dV, for the appropriate values of voltages and interdot tunneling couplings, can give a direct observation of the coherent superposition between the many-body Kondo states of each dot. This coherence can be also detected in the linear transport through the system: the curve linear conductance vs temperature is nonmonotonic, with a maximum at a temperature T* characterizing quantum coherence between both the Kondo states.

  11. Quantum-dot Carnot engine at maximum power.

    PubMed

    Esposito, Massimiliano; Kawai, Ryoichi; Lindenberg, Katja; Van den Broeck, Christian

    2010-04-01

    We evaluate the efficiency at maximum power of a quantum-dot Carnot heat engine. The universal values of the coefficients at the linear and quadratic order in the temperature gradient are reproduced. Curzon-Ahlborn efficiency is recovered in the limit of weak dissipation.

  12. Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power.

    PubMed

    Li, Lijie; Jiang, Jian-Hua

    2016-08-23

    The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices.

  13. Robust hybrid quantum dot laser for integrated silicon photonics.

    PubMed

    Kurczveil, Géza; Liang, Di; Fiorentino, Marco; Beausoleil, Raymond G

    2016-07-11

    We demonstrate the first quantum dot (QD) laser on a silicon substrate with efficient coupling of light to a silicon waveguide under the QD gain region. Continuous wave operation up to 100 °C and multiwavelength operation are demonstrated, paving the way towards highly efficient CMOS-compatible, uncooled, WDM sources. PMID:27410883

  14. Making Ternary Quantum Dots From Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila; Banger, Kulbinder; Castro, Stephanie; Hepp, Aloysius

    2007-01-01

    A process has been devised for making ternary (specifically, CuInS2) nanocrystals for use as quantum dots (QDs) in a contemplated next generation of high-efficiency solar photovoltaic cells. The process parameters can be chosen to tailor the sizes (and, thus, the absorption and emission spectra) of the QDs.

  15. Characterization of the Uptake of Quantum Dots by Algae

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Priyanka; Lin, Sijie; Sun, Xiaoqian; Brune, David; Ke, Pu-Chun

    2009-03-01

    The exposure of living systems to nanoparticles is inevitable due to a dramatic increase in their release into the environment, the most likely pathways being through inhalation, ingestion and skin uptake. The extremely small size of the nanoparticles may facilitate their tissue and cellular uptake by plants and animals, resulting in either positive (drug delivery, antioxidation) or negative (toxicity, cellular dysfunction) effects. Here we report the effects of quantum dots uptake by algae, the single-celled plant species and major food sources for aquatic organisms. In our studies, the presence of quantum dots in algal cells was detected using fluorescence microscopy and electron microscopy. Using spectrophotometry we found a supralinear increase of the uptake with the concentration of quantum dots, with a saturation of the uptake occurring beyond a concentration of 15 mg/mL. Using a bicarbonate indicator we further evaluated the effects of quantum dots uptake on algal photosynthesis and respiration. Such study facilitates our understanding of the environmental impact of nanomaterials.

  16. Scattering phase of quantum dots: emergence of universal behavior.

    PubMed

    Molina, Rafael A; Jalabert, Rodolfo A; Weinmann, Dietmar; Jacquod, Philippe

    2012-02-17

    We investigate scattering through chaotic ballistic quantum dots in the Coulomb-blockade regime. Focusing on the scattering phase, we show that large universal sequences emerge in the short wavelength limit, where phase lapses of π systematically occur between two consecutive resonances. Our results are corroborated by numerics and are in qualitative agreement with existing experiments. PMID:22401237

  17. Bit-Serial Adder Based on Quantum Dots

    NASA Technical Reports Server (NTRS)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Mathew

    2003-01-01

    A proposed integrated circuit based on quantum-dot cellular automata (QCA) would function as a bit-serial adder. This circuit would serve as a prototype building block for demonstrating the feasibility of quantum-dots computing and for the further development of increasingly complex and increasingly capable quantum-dots computing circuits. QCA-based bit-serial adders would be especially useful in that they would enable the development of highly parallel and systolic processors for implementing fast Fourier, cosine, Hartley, and wavelet transforms. The proposed circuit would complement the QCA-based circuits described in "Implementing Permutation Matrices by Use of Quantum Dots" (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42 and "Compact Interconnection Networks Based on Quantum Dots" (NPO-20855), which appears elsewhere in this issue. Those articles described the limitations of very-large-scale-integrated (VLSI) circuitry and the major potential advantage afforded by QCA. To recapitulate: In a VLSI circuit, signal paths that are required not to interact with each other must not cross in the same plane. In contrast, for reasons too complex to describe in the limited space available for this article, suitably designed and operated QCA-based signal paths that are required not to interact with each other can nevertheless be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. To enable a meaningful description of the proposed bit-serial adder, it is necessary to further recapitulate the description of a quantum-dot cellular automation from the first-mentioned prior article: A quantum-dot cellular automaton contains four quantum dots positioned at the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the

  18. Towards Engineered Energy Flows in Quantum Dot Assemblies

    NASA Astrophysics Data System (ADS)

    Crooker, Scott A.

    2003-03-01

    Communication, coupling, and coherence between quantum dots are central themes in numerous scientific efforts of present physical and technological interest. In the limit of large numbers of coupled dots, colloidal semiconductor nanocrystal quantum dots (NQDs) are promising building blocks for the bottom-up assembly of macroscopic Â"artificial materialsÂ" having engineered functionality. Although NQDs offer size-tunable optical properties and ease of chemical manipulation into structures of varied complexity, strong inter-dot coupling (e.g., via electron tunneling) requires close proximity and a high degree of structural order, conditions which are difficult to achieve in practice. In this work [1] we investigate an alternative approach involving NQD coupling via long-range dipolar interactions, which allow inter-dot communication via resonant (Förster) energy transfer. We present studies of the dynamics of resonant energy transfer in monodisperse, mixed-size, and energy gradient (layered) assemblies of CdSe NQDs. Time- and spectrally-resolved photoluminescence data directly reveal the energy-dependent transfer rate of excitons from smaller to larger dots, showing sub-nanosecond energy transfer directly across a large tens-of-meV energy gap (i.e., between dots of disparate size). Results from layered NQD assemblies demonstrate unidirectional energy flows, a first step towards artificial light-harvesting structures. In comparison with some of Nature's most efficient energy transfer complexes -- chlorophylls -- the data suggest that inter-dot energy transfer can approach picosecond time scales in structurally optimized systems. [1] S. A. Crooker, J. A. Hollingsworth, S. Tretiak, and V. I. Klimov, Phys. Rev. Lett. v89, p186802 (2002).

  19. Double-layer-gate architecture for few-hole GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, D. Q.; Hamilton, A. R.; Farrer, I.; Ritchie, D. A.; Klochan, O.

    2016-08-01

    We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode {{Al}}x{{Ga}}1-x{As}/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.

  20. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

    PubMed

    Seravalli, L; Trevisi, G; Frigeri, P; Franchi, S; Geddo, M; Guizzetti, G

    2009-07-01

    We report on a photoluminescence and photoreflectance study of metamorphic InAs/InGaAs quantum dot strain-engineered structures with and without additional InAlAs barriers intended to limit the carrier escape from the embedded quantum dots. From: (1) the substantial correspondence of the activation energies for thermal quenching of photoluminescence and the differences between wetting layer and quantum dot transition energies and (2) the unique capability of photoreflectance of assessing the confined nature of the escape states, we confidently identify the wetting layer states as the final ones of the process of carrier thermal escape from quantum dots, which is responsible for the photoluminescence quenching. Consistently, by studying structures with additional InAlAs barriers, we show that a significant reduction of the photoluminescence quenching can be obtained by the increase of the energy separation between wetting layers and quantum dot states that results from the insertion of enhanced barriers. These results provide useful indications on the light emission quenching in metamorphic quantum dot strain-engineered structures; such indications allow us to obtain light emission at room temperature in the 1.55 microm range and beyond by quantum dot nanostructures grown on GaAs substrates.

  1. Numerical modeling of shape and size dependent intermediate band quantum dot solar cell

    NASA Astrophysics Data System (ADS)

    Sabeur, Abdelkader; Jiang, Jianliang; Imran, Ali

    2015-08-01

    The electronic structure of the self-assembled quantum dot is presented in this paper to explore the efficient design of quantum dot solar cell. The electronic states of InAs quantum dot embedded in a GaAs matrix have been studied in this article, in which it is assumed the effective mass is independent of level energy for simplification. The shape effect and the layer effect for single quantum dot are investigated, and a simple one-band model for array quantum dots is studied. In the array quantum dots the wave function interaction will be strong, when the space between quantum dots is very close, which will affect the level energy.

  2. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    SciTech Connect

    You, Jie; Li, Hai-Ou E-mail: gpguo@ustc.edu.cn; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping E-mail: gpguo@ustc.edu.cn

    2015-12-07

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.

  3. Magnetospectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

    NASA Astrophysics Data System (ADS)

    Durnev, M. V.; Vidal, M.; Bouet, L.; Amand, T.; Glazov, M. M.; Ivchenko, E. L.; Zhou, P.; Wang, G.; Mano, T.; Ha, N.; Kuroda, T.; Marie, X.; Sakoda, K.; Urbaszek, B.

    2016-06-01

    We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the "hot" trions X-* and X+*, and the doubly negatively charged exciton X2 -. Our magnetophotoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magnetophotoluminescence spectra of X-*,X+*, and X2 - complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and g factors for the charge carriers occupying excited states.

  4. Influence of hole shape/size on the growth of site-selective quantum dots

    PubMed Central

    2013-01-01

    The number of quantum dots which nucleate at a certain place has to be controllable for device integration. It was shown that the number of quantum dots per nucleation site depends on the size of the hole in the substrate, but other dimensions of the nucleation site are vague. We report on the influence of hole shape on site-selectively grown InAs quantum dots (QDs) by molecular beam epitaxy. Dry etching of the GaAs wafers was used because of its high anisotropic etching characteristic. Therefore, it was possible to verify the influence of several hole shape parameters on the subsequent QD growth independently. We show that the nucleation of these QDs depends on several properties of the hole, namely its surface area, aspect ratio of the surface area, and depth. Especially, the aspect ratio shows a big influence on the number of nucleating QDs per site. With knowledge of these dependencies, it is possible to influence the number of QDs per site and also its distribution. PMID:24289235

  5. Self-assembled quantum dots in a nanowire system for quantum photonics

    NASA Astrophysics Data System (ADS)

    Heiss, M.; Fontana, Y.; Gustafsson, A.; Wüst, G.; Magen, C.; O'Regan, D. D.; Luo, J. W.; Ketterer, B.; Conesa-Boj, S.; Kuhlmann, A. V.; Houel, J.; Russo-Averchi, E.; Morante, J. R.; Cantoni, M.; Marzari, N.; Arbiol, J.; Zunger, A.; Warburton, R. J.; Fontcuberta I Morral, A.

    2013-05-01

    Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells.

  6. Self-assembled quantum dots in a nanowire system for quantum photonics.

    PubMed

    Heiss, M; Fontana, Y; Gustafsson, A; Wüst, G; Magen, C; O'Regan, D D; Luo, J W; Ketterer, B; Conesa-Boj, S; Kuhlmann, A V; Houel, J; Russo-Averchi, E; Morante, J R; Cantoni, M; Marzari, N; Arbiol, J; Zunger, A; Warburton, R J; Fontcuberta i Morral, A

    2013-05-01

    Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells. PMID:23377293

  7. Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

    NASA Technical Reports Server (NTRS)

    Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

    2007-01-01

    Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

  8. Graphene Quantum Dots: Molecularly Designed, Nitrogen-Functionalized Graphene Quantum Dots for Optoelectronic Devices (Adv. Mater. 23/2016).

    PubMed

    Tetsuka, Hiroyuki; Nagoya, Akihiro; Fukusumi, Takanori; Matsui, Takayuki

    2016-06-01

    H. Tetsuka and co-workers develop a versatile technique to tune the energy levels and energy gaps of nitrogen-functionalized graphene quantum dots (NGQDs) continuously through molecular structure design, as described on page 4632. The incorporation of layers of NGQDs into the structures markedly improves the performance of optoelectronic devices. PMID:27281048

  9. Fano-Andreev effect in Quantum Dots in Kondo regime

    NASA Astrophysics Data System (ADS)

    Orellana, Pedro; Calle, Ana Maria; Pacheco, Monica; Apel, Victor

    In the present work, we investigate the transport through a T-shaped double quantum dot system coupled to two normal leads and to a superconducting lead. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot and by means of a slave boson mean field approximation at low temperature regime. We inquire into the influence of intradot interactions in the electronic properties of the system as well. Our results show that Fano resonances due to Andreev bound states are exhibited in the transmission from normal to normal lead as a consequence of quantum interference and proximity effect. This Fano effect produced by Andreev bound states in a side quantum dot was called Fano-Andreev effect, which remains valid even if the electron-electron interaction are taken into account, that is, the Fano-Andreev effect is robust against e-e interactions even in Kondo regime. We acknowledge the financial support from FONDECYT program Grants No. 3140053 and 11400571.

  10. MBE growth and characteristics of antimonide-based quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Xue

    Semiconductor quantum dots (QDs) are an important class of low dimensional materials for optoelectronic applications since they offer the possibility of a three-dimensional carrier confinement. Among III-V semiconductor material systems, antimony-based QDs hold the promise for the realization of low threshold room-temperature mid-infrared lasers because of the low band gap energy (0.17 eV at 300K) of InSb and the large lattice mismatch between InSb and GaSb. The fabrication of InSb/GaSb self-assembled QDs for optoelectronic applications by Molecular Beam Epitaxy (MBE) is ventured in this dissertation. Here both uncapped and capped self-assembled InSb QDs are fabricated by MBE on nominal GaSb (100)+/-0.1°and GaSb (100)+/-6°. The growth conditions are optimized to obtain QDs with both high density and good uniformity. The influence of growth parameters i.e., substrate temperature, nominally deposited thickness, annealing time and substrate orientation on QD size, uniformity and distribution, are systematically studied. The structural and optical properties of these QDs are characterized using in-situ Reflection High-energy Electron Diffraction (RHEED), and ex-situ Atomic Force Microscopy (AFM) and Photo-Luminescence (PL) measurements. Confined energy levels in the strained InSb/GaSb QD system are estimated theoretically and compared with the experimental results. Three-dimensional uncapped InSb QDs were successfully grown on GaSb (100) substrates at a density of 2.8x109/cm2 by MBE via the Stranski-Krastanov mode of self-organization. The two-dimensional to three-dimensional transition in this mode releases the strain arising from the mis-match between the substrate and the epilayer. The average base side length of the resulting QDs is 100+/-24 nm and the height is 4.9+/-1.6 nm. The best size uniformity, with standard deviations of 23% for base length and 48% for height was obtained under the optimized growth conditions of 3.9ML material deposition, a growth

  11. Fluorescence and Bonding of Quantum Dots on DNA Origami Constructs

    NASA Astrophysics Data System (ADS)

    Kessinger, Matthew; Corrigan, Timothy; Neff, David; Norton, Michael; Concord University Collaboration; Marshall University Collaboration

    2015-03-01

    Semiconductor quantum dots (QDots) have historically been of interest to the scientific community since their creation for various applications ranging from solar energy to optical labeling. In this study, bioconjugated CdSe/ZnS core/shell QDots were synthesized and functionalized with 3-mercaptopropionic acid using both traditional ligand exchange as well as newly developed in situ functionalization techniques used to increase the quantum yield of the QDots. Their fluorescence and bonding to both gold as well as DNA origami were investigated for use in self assembled DNA constructs. It is believed that controlling the attachment and spacing of these nanoparticles on DNA origami could be used in a variety of optical labeling and sensing applications. Commercially available biotin and streptavidin functionalized quantum dots were also examined, and subject to the same experiments with gold nanoparticles as the MPA functionalized QDots.

  12. Synthesis, Characterization and Application Of PbS Quantum Dots

    SciTech Connect

    Sarma, Sweety; Datta, Pranayee; Barua, Kishore Kr.; Karmakar, Sanjib

    2009-06-29

    Lead Chalcogenides (PbS, PbSe, PbTe) quantum dots (QDs) are ideal for fundamental studies of strongly quantum confined systems with possible technological applications. Tunable electronic transitions at near--infrared wavelengths can be obtained with these QDs. Applications of lead chalcogenides encompass quite a good number of important field viz. the fields of telecommunications, medical electronics, optoelectronics etc. Very recently, it has been proposed that 'memristor'(Memory resistor) can be realized in nanoscale systems with coupled ionic and electronic transports. The hystersis characteristics of 'memristor' are observed in many nanoscale electronic devices including semiconductor quantum dot devices. This paper reports synthesis of PbS QDs by chemical route. The fabricated samples are characterized by UV-Vis, XRD, SEM, TEM, EDS, etc. Observed characteristics confirm nano formation. I-V characteristics of the sample are studied for investigating their applications as 'memristor'.

  13. Deterministic teleportation of electrons in a quantum dot nanostructure.

    PubMed

    de Visser, R L; Blaauboer, M

    2006-06-23

    We present a proposal for deterministic quantum teleportation of electrons in a semiconductor nanostructure consisting of a single and a double quantum dot. The central issue addressed in this Letter is how to design and implement the most efficient--in terms of the required number of single and two-qubit operations--deterministic teleportation protocol for this system. Using a group-theoretical analysis, we show that deterministic teleportation requires a minimum of three single-qubit rotations and two entangling (square root SWAP) operations. These can be implemented for spin qubits in quantum dots using electron-spin resonance (for single-spin rotations) and exchange interaction (for square root SWAP operations).

  14. Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensembles

    NASA Astrophysics Data System (ADS)

    Herzog, F.; Heedt, S.; Goerke, S.; Ibrahim, A.; Rupprecht, B.; Heyn, Ch; Hardtdegen, H.; Schäpers, Th; Wilde, M. A.; Grundler, D.

    2016-02-01

    We report on the magnetization of ensembles of etched quantum dots with a lateral diameter of 460 nm, which we prepared from InGaAs/InP heterostructures. The quantum dots exhibit 1/B-periodic de-Haas-van-Alphen-type oscillations in the magnetization M(B) for external magnetic fields B  >  2 T, measured by torque magnetometry at 0.3 K. We compare the experimental data to model calculations assuming different confinement potentials and including ensemble broadening effects. The comparison shows that a hard wall potential with an edge depletion width of 100 nm explains the magnetic behavior. Beating patterns induced by Rashba spin-orbit interaction (SOI) as measured in unpatterned and nanopatterned InGaAs/InP heterostructures are not observed for the quantum dots. From our model we predict that signatures of SOI in the magnetization could be observed in larger dots in tilted magnetic fields.

  15. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    SciTech Connect

    Barettin, Daniele Auf der Maur, Matthias; De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro; Pecchia, Alessandro

    2015-03-07

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  16. Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

    SciTech Connect

    Li, Hai-Ou; Cao, Gang; Xiao, Ming You, Jie; Wei, Da; Tu, Tao; Guo, Guang-Can; Guo, Guo-Ping; Jiang, Hong-Wen

    2014-11-07

    We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

  17. Evaporation-Induced Assembly of Quantum Dots into Nanorings

    PubMed Central

    Chen, Jixin; Liao, Wei-Ssu; Chen, Xin; Yang, Tinglu; Wark, Stacey E.; Son, Dong Hee; Batteas, James D.; Cremer, Paul S.

    2011-01-01

    Herein, we demonstrate the controlled formation of two-dimensional periodic arrays of ring-shaped nanostructures assembled from CdSe semiconductor quantum dots (QDs). The patterns were fabricated by using an evaporative templating method. This involves the introduction of an aqueous solution containing both quantum dots and polystyrene microspheres onto the surface of a planar hydrophilic glass substrate. The quantum dots became confined to the meniscus of the microspheres during evaporation, which drove ring assembly via capillary forces at the polystyrene sphere/glass substrate interface. The geometric parameters for nanoring formation could be controlled by tuning the size of the microspheres and the concentration of the QDs employed. This allowed hexagonal arrays of nanorings to be formed with thicknesses ranging from single dot necklaces to thick multilayer structures over surface areas of many square millimeters. Moreover, the diameter of the ring structures could be simultaneously controlled. A simple model was employed to explain the forces involved in the formation of nanoparticle nanorings. PMID:19206264

  18. Quantum dot-sized organic fluorescent dots for long-term cell tracing

    NASA Astrophysics Data System (ADS)

    Li, Kai; Tang, Ben Zhong; Liu, Bin

    2014-03-01

    Fluorescence techniques have been extensively employed to develop non-invasive methodologies for tracking and understanding complex biological processes both in vitro and in vivo, which is of high importance in modern life science research. Among a variety of fluorescent probes, inorganic semiconductor quantum dots (QDs) have shown advantages in terms of better photostability, larger Stokes shift and more feasible surface functionalization. However, their intrinsic toxic heavy metal components and unstable fluorescence at low pH greatly impede the applications of QDs in in vivo studies. In this work, we developed novel fluorescent probes that can outperform currently available QD based probes in practice. Using conjugated oligomer with aggregation-induced emission characteristics as the fluorescent domain and biocompatible lipid-PEG derivatives as the encapsulation matrix, the obtained organic dots have shown higher brightness, better stability in biological medium and comparable size and photostability as compared to their counterparts of inorganic QDs. More importantly, unlike QD-based probes, the organic fluorescent dots do not blink, and also do not contain heavy metal ions that could be potentially toxic when applied for living biosubstrates. Upon surface functionalization with a cell-penetrating peptide, the organic dots greatly outperform inorganic quantum dots in both in vitro and in vivo long-term cell tracing studies, which will be beneficial to answer crucial questions in stem cell/immune cell therapies. Considering the customized fluorescent properties and surface functionalities of the organic dots, a series of biocompatible organic dots will be developed to serve as a promising platform for multifarious bioimaging tasks in future.

  19. Carbon "Quantum" Dots for Fluorescence Labeling of Cells.

    PubMed

    Liu, Jia-Hui; Cao, Li; LeCroy, Gregory E; Wang, Ping; Meziani, Mohammed J; Dong, Yiyang; Liu, Yuanfang; Luo, Pengju G; Sun, Ya-Ping

    2015-09-01

    The specifically synthesized and selected carbon dots of relatively high fluorescence quantum yields were evaluated in their fluorescence labeling of cells. For the cancer cell lines, the cellular uptake of the carbon dots was generally efficient, resulting in the labeling of the cells with bright fluorescence emissions for both one- and two-photon excitations from predominantly the cell membrane and cytoplasm. In the exploration on labeling the live stem cells, the cellular uptake of the carbon dots was relatively less efficient, though fluorescence emissions could still be adequately detected in the labeled cells, with the emissions again predominantly from the cell membrane and cytoplasm. This combined with the observed more efficient internalization of the same carbon dots by the fixed stem cells might suggest some significant selectivity of the stem cells toward surface functionalities of the carbon dots. The needs and possible strategies for more systematic and comparative studies on the fluorescence labeling of different cells, including especially live stem cells, by carbon dots as a new class of brightly fluorescent probes are discussed.

  20. Approaches to Future Generation Photovoltaics and Solar Fuels: Quantum Dots, Arrays, and Quantum Dot Solar Cells

    SciTech Connect

    Semonin, O.; Luther, J.; Beard, M.; Johnson, J.; Gao, J.; Nozik, A.

    2012-01-01

    One potential, long-term approach to more efficient and lower cost future generation solar cells for solar electricity and solar fuels is to utilize the unique properties of quantum dots (QDs) to control the relaxation pathways of excited states to enhance multiple exciton generation (MEG). We have studied MEG in close-packed PbSe QD arrays where the QDs are electronically coupled in the films and thus exhibit good transport while still maintaining quantization and MEG. We have developed simple, all-inorganic solution-processable QD solar cells that produce large short-circuit photocurrents and power conversion efficiencies above 5% via nanocrystalline p-n junctions. These solar cells show QYs for photocurrent that exceed 100% in the photon energy regions where MEG is possible; the photocurrent MEG QYs as a function of photon energy match those determined via time-resolved spectroscopy Recent analyses of the major effect of MEG combined with solar concentration on the conversion efficiency of solar cells will also be discussed.