Science.gov

Sample records for quantum dots grown

  1. InAsP quantum dot lasers grown by MOVPE.

    PubMed

    Karomi, Ivan; Smowton, Peter M; Shutts, Samuel; Krysa, Andrey B; Beanland, Richard

    2015-10-19

    We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

  2. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

    DTIC Science & Technology

    2011-12-01

    ELECTROLUMINESCENCE STUDIES ON LONG WAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE THESIS John C...11-46 ELECTROLUMINESCENCE STUDIES ON LONGWAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE THESIS...58 1 ELECTROLUMINESCENCE STUDIES ON LONGWAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE I

  3. Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

    PubMed

    Liu, Alan Y; Komljenovic, Tin; Davenport, Michael L; Gossard, Arthur C; Bowers, John E

    2017-05-01

    We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

  4. Quantum Dots

    NASA Astrophysics Data System (ADS)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  5. PbTe quantum dots grown by femtosecond laser ablation

    NASA Astrophysics Data System (ADS)

    Rodriguez, E.; Biggemann, D.; Moya, L.; Pippo, W. A.; Moreira, R. S.; Silva, D.; Cesar, C. L.; Barbosa, L. C.; Schrank, A.; Souza Filho, C. R.; de Oliveira, E. P.

    2008-02-01

    Laser ablation (LA) is a thin film fabrication technique which has generated a lot of interest in the past few years as one of the simplest and most versatile methods for the deposition of a wide variety of materials. With the rapid development experienced in the generation of ultra short laser pulses, new possibilities were opened for the laser ablation technique, using femtosecond lasers as ablation source. It is commonly believed that when the temporal length of the laser pulse became shorter than the several picoseconds required to couple the electronic energy to the lattice of the material, thermal effects could not play a significant role. Since the pulse width is too short for thermal effects to take place, with each laser pulse a few atom layers of material are direct vaporized away from the target surface and a better control in the quantum dots (QDs) fabrication could be achieved. In this work we report the fabrication of PbTe QDs by femtosecond laser ablation of a PbTe target in argon atmosphere. Experiments were carried out using a typical LA configuration comprising a deposition chamber and an ultra short pulsed laser (100 fs; 30 mJ) at a central wavelength of 800 nm. PbTe was chosen because its QDs absorption band can be controlled by its size to fall in the spectral window of interest for optical communications (1.3-1.5 μm). This, together with the QD high optical nonlinearity, makes this material an excellent candidate for development of photonic devices. It was investigated the influence of the number of laser pulses in the formation of the nanoparticles. The structural parameters and the surface density of the nanoparticles were studied by high resolution transmission electron microscopy (HRTEM).

  6. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

    DOE PAGES

    Norman, Justin; Kennedy, M. J.; Selvidge, Jennifer; ...

    2017-02-14

    High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. Here, we achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

  7. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.

    PubMed

    Norman, Justin; Kennedy, M J; Selvidge, Jennifer; Li, Qiang; Wan, Yating; Liu, Alan Y; Callahan, Patrick G; Echlin, McLean P; Pollock, Tresa M; Lau, Kei May; Gossard, Arthur C; Bowers, John E

    2017-02-20

    High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

  8. Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

    NASA Astrophysics Data System (ADS)

    Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.

    2012-02-01

    We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-Ωcm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ≈4×1011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper

  9. GaN Quantum Dot Superlattices Grown by Molecular Beam Epitaxy at High Temperature

    SciTech Connect

    Xu,T.; Zhou, L.; Wang, Y.; Ozcan, A.; Ludwig, K.; Smith, D.; Moustakas, T.

    2007-01-01

    In this paper, we report the growth of GaN quantum dot superlattices (QDSLs) with AlN barriers on (0001) sapphire substrates by molecular beam epitaxy at relatively high temperature (770? C) using the modified Stranski-Krastanov growth mode. Observations with atomic force microscopy show that the height distribution of the dots depends strongly on the number of GaN monolayers (MLs) grown on the AlN barriers. Specifically, the height distribution consists of two Gaussian distributions (bimodal) for coverages of 3 or 4 ML, and becomes a single Gaussian distribution for 5 and 6 ML of coverage. Furthermore, the density of quantum dots increases with the degree of coverage and saturates at 2x1011?dots/cm2. An increase in the number of stacks in the superlattice structure with 4 ML coverage also leads to a more pronounced bimodal height distribution. Electron microscopy observations indicate that the GaN QDs are truncated pyramids faceted along the {l_brace}1math03{r_brace} planes and suggest that larger dots are associated with threading dislocations which presumably provide low-energy nucleation sites. Transmission electron microscopy studies also indicate that most of the larger dots are nucleated next to edge-type dislocations, while most of the smaller dots are located in dislocation-free regions. These GaN QDSLs were also studied by grazing-incidence small angle x-ray scattering and grazing-incidence x-ray diffraction methods. The average lateral deviation and the vertical correlation length between QD positions for two successive layers were determined to be 1.4?nm and 190?nm, respectively. A GaN QD growth model is proposed to explain the phenomenon.

  10. Electron localization in self-assembled Si quantum dots grown on Ge(111)

    NASA Astrophysics Data System (ADS)

    Stepina, N. P.; Zinovieva, A. F.; Zinovyev, V. A.; Deryabin, A. S.; Kulik, L. V.; Dvurechenskii, A. V.

    2015-12-01

    Electron localization in a Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with a g-factor g=2.0022+/- 0.0001 and ESR line width {{Δ }}H≈ 1.2 Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained taking into account the energy band modification due to both strain and quantum confinement. The transport behavior confirms the efficient electron localization in QDs for a Si/Ge(111) system. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be the main reason for an unobserved ESR signal from the QDs.

  11. Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy.

    PubMed

    Linares-García, Gabriel; Meza-Montes, Lilia; Stinaff, Eric; Alsolamy, S M; Ware, M E; Mazur, Y I; Wang, Z M; Lee, Jihoon; Salamo, G J

    2016-12-01

    Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k · p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.

  12. InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Banerjee, Animesh; Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Bhattacharya, Pallab

    2013-09-01

    Blue-and green-emitting quantum dots have been characterized and ridge waveguide lasers incorporating such quantum dots into the active region have been realized. The laser heteroscturctures were grown by plasma assisted molecular beam epitaxy. Injected carrier lifetimes in the quantum dots have also been measured by temperature dependent and time resolved photoluminescence. A threshold current density of 930 A/cm2 in the blue-emitting lasers was measured under pulsed bias. A tunnel injection scheme to inject holes has been incorporated in the design of the green quantum dot lasers, and a threshold current density of 945 A/cm2 in the green-emitting lasers has been measured under pulsed bias. Slope efficiencies of 0.41 W/A and 0.25 W/A have been measured, corresponding to differential quantum efficiencies of 13.9% and 11.3%, in the blue and green lasers, respectively.

  13. Photoelectronic Properties of InAs/GaAs Nanostructures With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy

    DTIC Science & Technology

    2000-06-23

    With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy DISTRIBUTION: Approved for public release, distribution...19-23, 2000 © 2000 loffe Institute Photoelectronic properties of InAs/GaAs nanostructures with combined quantum well and quantum dot layers grown by...of quantum well (QW) and QD layers in the GaAs/In.Gal-,As nanos- tructures obtained by MOVPE result not only in well known "red shift" of the QD PL

  14. Dislocation analysis of InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yang, Di; Wang, Lai; Hao, Zhi-Biao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

    2016-11-01

    The dislocations in InGaN/GaN quantum dots grown by metal organic chemical vapor deposition were studied by high-resolution transmission electron microscopy combining the Fourier filtering process. The misfit dislocations were observed in uncapped InGaN/GaN quantum dots. However, for the capped InGaN/GaN quantum dots, the GaN capping layer was found to suppress the generation of misfit dislocations and hence hindered the strain relaxation. Therefore, an overgrowth InGaN layer was used to relieve the strain in InGaN quantum dots and misfit dislocations were correspondingly found in these samples. In addition, defects were observed in low temperature GaN layers which suggested the existence of stacking faults.

  15. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

    PubMed

    Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

    2011-10-01

    The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

  16. Charge tuning in [111] grown GaAs droplet quantum dots

    SciTech Connect

    Bouet, L.; Vidal, M.; Marie, X.; Amand, T.; Wang, G.; Urbaszek, B.; Mano, T.; Ha, N.; Kuroda, T.; Sakoda, K.; Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L.

    2014-08-25

    We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from −3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T = 4 K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25 meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

  17. Strain Relief Analysis of InN Quantum Dots Grown on GaN

    PubMed Central

    2007-01-01

    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. PMID:21794190

  18. Composition of the “GaAs” quantum dot, grown by droplet epitaxy

    NASA Astrophysics Data System (ADS)

    Nemcsics, Á.; Tóth, L.; Dobos, L.; Heyn, Ch.; Stemmann, A.; Schramm, A.; Welsch, H.; Hansen, W.

    2010-10-01

    Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD.

  19. Surface studies of gallium nitride quantum dots grown using droplet epitaxy on bulk, native substrates

    NASA Astrophysics Data System (ADS)

    Jones, Christina; Jeon, Sunyeol; Goldman, Rachel; Yacoby, Yizhak; Clarke, Roy

    Gallium nitride (GaN) and its applications in light-emitting diodes play an integral part in efficient, solid-state lighting, as evidenced by its recognition in the 2014 Nobel prize in physics. In order to push this technology towards higher efficiency and reliability and lower cost, we must understand device growth on bulk GaN substrates, which have lower defect densities and strain than template GaN substrates grown on sapphire. In this work, we present our findings on the surface properties of GaN quantum dots (QDs) grown on commercial bulk GaN. QDs are grown using the droplet epitaxy method and analyzed using a surface X-ray diffraction technique called Coherent Bragg Rod Analysis (COBRA), which uses phase retrieval to reconstruct atomic positions near the substrate surface. While several QD growth conditions in our study produce dense QDs, COBRA reveals that only low nitridation temperatures result in GaN QDs that are coherent with the bulk GaN substrate. Results are supported with atomic force microscopy and high-resolution transmission electron microscopy.

  20. Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity.

    PubMed

    Sun, Zhenhua; Liu, Zhike; Li, Jinhua; Tai, Guo-An; Lau, Shu-Ping; Yan, Feng

    2012-11-14

    Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    SciTech Connect

    Soto Rodriguez, Paul E. D. Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph; Nötzel, Richard

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  2. Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs

    NASA Astrophysics Data System (ADS)

    Loeber, Thomas Henning; Strassner, Johannes; Wolff, Sandra; Laegel, Bert; Foukhardt, Henning

    2017-02-01

    Ga(Sb)As quantum dots (QDs) are usually grown on plane GaAs substrates by self-organization in the StranskiKrastanov mode. Here we report on Ga(As)Sb QD growth on a pre-structured GaAs substrate to achieve highly ordered QDs. The structure consists of a two-dimensional array of holes/troughs milled into the substrate (wafer with initial epitaxial buffer layer) with a gallium focused ion beam (Ga-FIB). Thus, the area density of the QDs can be controled. For exact positioning of the QDs in the milled holes it is important that the diameter of the dots equals the diameter of the milled holes. In a previous publication we have shown that we are able to change the diameter as well as the height of the QDs by controlled variation of growth temperature, Ga/Sb ratio, and nominal coverage. The diameter and depth of the milled holes as well as their separation are varied. Also, different milling techniques are examined to optimize milling time and procedure. The pre-structured GaAs substrate is overgrown in a second molecular-beam-epitaxial (MBE) step, first with another thin GaAs buffer layer, then with a QD layer. With the optimum of the milling and growth parameter sets the diameter of the QDs equals the size of the milled holes and the QDs can be grown highly ordered in the given pre-structured array. To the best of our knowledge this is the first report about exact positioning of Ga(As)Sb QDs on GaAs.

  3. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  4. 1300 nm wavelength InAs quantum dot photodetector grown on silicon.

    PubMed

    Sandall, Ian; Ng, Jo Shien; David, John P R; Tan, Chee Hing; Wang, Ting; Liu, Huiyun

    2012-05-07

    The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the dark currents were two orders of magnitude lower than those reported for Ge on Si photodiodes. The diodes exhibited avalanche breakdown at 22 V reverse bias which is probably dominated by impact ionisation occurring in the GaAs and AlGaAs barrier layers. A red shift in the absorption peak of 61.2 meV was measured when the reverse bias was increased from 0 to 22 V, which we attributed to the quantum confined stark effect. This shift also leads to an increase in the responsivity at a fixed wavelength as the bias is increased, yielding a maximum increase in responsivity by a factor of 140 at the wavelength of 1365 nm, illustrating the potential for such a structure to be used as an optical modulator.

  5. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.

    2015-06-01

    We have studied the material properties and device performance of InAs/GaAs quantum dot solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (S-K), quasi-monolayer (QML), and sub-monolayer (SML) growth modes. All QDSCs show an extended external quantum efficiency (EQE) at near infrared wavelengths of 950–1070 nm from the QD absorption. Compared to the S-K and SML QDSCs, the QML QDSC with a higher strain exhibits a poor EQE response in the wavelength region of 300–880 nm due to increased non-radiative recombination. The conversion efficiency of the S-K and SML QDSCs exceeds that of the reference cell (13.4%) without QDs due to an enhanced photocurrent (>16% increase) produced by the silicon doped QD stacks. However, as expected from the EQE of the QML QDSC, the increase of strain-induced crystalline defects greatly degrades the photocurrent and open-circuit voltage, leading to the lowest conversion efficiency (8.9%)

  6. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Kim, Yeongho; Ban, Keun-Yong; Honsberg, Christiana B.

    2015-06-01

    We have studied the material properties and device performance of InAs/GaAs quantum dot solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (S-K), quasi-monolayer (QML), and sub-monolayer (SML) growth modes. All QDSCs show an extended external quantum efficiency (EQE) at near infrared wavelengths of 950-1070 nm from the QD absorption. Compared to the S-K and SML QDSCs, the QML QDSC with a higher strain exhibits a poor EQE response in the wavelength region of 300-880 nm due to increased non-radiative recombination. The conversion efficiency of the S-K and SML QDSCs exceeds that of the reference cell (13.4%) without QDs due to an enhanced photocurrent (>16% increase) produced by the silicon doped QD stacks. However, as expected from the EQE of the QML QDSC, the increase of strain-induced crystalline defects greatly degrades the photocurrent and open-circuit voltage, leading to the lowest conversion efficiency (8.9%).

  7. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

    PubMed

    Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

    2012-03-23

    We report on the effect of post-growth thermal annealing of [011]- ,[011(-)]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots.

  8. Charge photogeneration in hybrid solar cells: A comparison between quantum dots and in situ grown CdS

    NASA Astrophysics Data System (ADS)

    Reynolds, Luke X.; Lutz, Thierry; Dowland, Simon; MacLachlan, Andrew; King, Simon; Haque, Saif A.

    2012-02-01

    We demonstrate that blend films containing poly(3-hexylthiophene-2,5-diyl) and in situ grown CdS display a greater yield of photogenerated charges than a blend containing an equivalent amount of pre-synthesised CdS quantum dots. Moreover, we show that the greater charge yield in the in situ grown films leads to an improvement in device efficiency. The present findings also appear to suggest that charge photogeneration at the CdS/polymer heterojunction is facilitated by the formation of nanoparticle networks as a result of CdS aggregation.

  9. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

    PubMed

    Wang, Ting; Liu, Huiyun; Lee, Andrew; Pozzi, Francesca; Seeds, Alwyn

    2011-06-06

    We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

  10. Silanization of plasma-grown silicon quantum dots for production of a tunable, stable, colloidal solution

    NASA Astrophysics Data System (ADS)

    Anderson, Ingrid E.; Shircliff, Rebecca A.; Lee, Benjamin G.; Simonds, Brian; Agarwal, Sumit; Stradins, Paul; Collins, Reuben T.

    2011-09-01

    Nanomaterials have the potential to revolutionize photovoltaics with the promise of new physics, novel architectures and low cost synthesis. Silicon quantum dots, relative to their II-VI counterparts, are understudied due to the difficulty of solution synthesis and chemical passivation. However, silicon is still an attractive solar cell material, providing an optimal band gap, low toxicity, and a very solid body of physical understanding of bulk silicon to draw from. We have synthesized silicon quantum dots with plasma enhanced chemical vapor deposition, and have developed a method for chemical passivation of these silicon quantum dots that can be used on particles created in a variety of ways. This versatile method utilizes oxidation via wet chemical etch and subsequent siloxane bond formation. The attachment of a silane to the SiOx shell leads to stability of the silicon core for over a month in air, and individual particles can be seen with TEM; thus a stable, colloidal suspension is formed. The future for this technique, including increasing quantum yield of the particles by changing the nature of the oxide, will be discussed.

  11. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Gacevic, Z.; Kehagias, Th.; Koukoula, T.; Komninou, Ph.

    2011-05-15

    We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities ({approx}10{sup 10} cm{sup -3}). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

  12. Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

    SciTech Connect

    Zhou, D.; Sharma, G.; Fimland, B. O.; Vullum, P. E.; Thomassen, S. F.; Holmestad, R.; Reenaas, T. W.

    2010-02-22

    We report current-voltage and spectral response characteristics of high density InAs/GaAs quantum dot (QD) solar cells with different positions where dots are located. The short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), and external quantum efficiency of these cells under air mass 1.5 are presented and compared with a GaAs reference cell. An extended photoresponse in contrast to the GaAs reference cell was confirmed for all these cells. The effect of inserting QD layers into emitter and base region on device performance is shown. The J{sub sc} is reduced, while the V{sub oc} is maintained. The cell with QDs located toward the base side shows better performance, confirmed by both current-voltage and spectral response measurements.

  13. Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

    SciTech Connect

    Zhou, D.; Sharma, G.; Fimland, B. O.; Thomassen, S. F.; Reenaas, T. W.

    2010-02-08

    We report high density quantum dots (QDs) formation with optimized growth temperature and V/III ratio. At lower growth temperature, QD density is increased, due to smaller surface migration length of In adatoms. With higher V/III, the QD density is higher but it results in large clusters formation and decreases the QD uniformity. The QD solar cell was fabricated and examined. An extended spectral response in contrast to the GaAs reference cell was presented but the external quantum efficiency at energies higher than GaAs band gap is reduced, resulting from the degradation for the emitter above the strained QD layers.

  14. Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.

    PubMed

    Bietti, Sergio; Esposito, Luca; Fedorov, Alexey; Ballabio, Andrea; Martinelli, Andrea; Sanguinetti, Stefano

    2015-12-01

    We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.

  15. Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Vidal, M.; Durnev, M. V.; Bouet, L.; Amand, T.; Glazov, M. M.; Ivchenko, E. L.; Zhou, P.; Wang, G.; Mano, T.; Kuroda, T.; Marie, X.; Sakoda, K.; Urbaszek, B.

    2016-09-01

    In self-assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X+ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines—a unique property of the (111) nanosystems—allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape.

  16. Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Makarovsky, Oleg; Turyanska, Lyudmila; Mori, Nobuya; Greenaway, Mark; Eaves, Laurence; Patané, Amalia; Fromhold, Mark; Lara-Avila, Samuel; Kubatkin, Sergey; Yakimova, Rositsa

    2017-09-01

    We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2  ×  1013 cm-2 and 400 meV, respectively.

  17. 1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates

    SciTech Connect

    Seravalli, L.; Frigeri, P.; Trevisi, G.; Franchi, S.

    2008-05-26

    We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 {mu}m and, therefore, is a viable method to achieve efficient emission in the 1.55 {mu}m window and beyond from quantum dots grown on GaAs substrates.

  18. Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy

    SciTech Connect

    Yang, C.S.; Lai, Y.J.; Chou, W.C.; Chen, W.K.; Lee, M.C.; Kuo, M.C.; Lee, J.; Shen, J.L.; Jang, D.J.; Cheng, Y.C.

    2005-02-01

    The morphology and the size-dependent photoluminescence (PL) spectra of the type-II ZnTe quantum dots (QDs) grown in a ZnSe matrix were obtained. The coverage of ZnTe varied from 2.5 to 3.5 monolayers (MLs). The PL peak energy decreased as the dot size increased. Excitation power and temperature-dependent PL spectra are used to characterize the optical properties of the ZnTe quantum dots. For 2.5- and 3.0-ML samples, the PL peak energy decreased monotonically as the temperature increased. However, for the 3.5-ML sample, the PL peak energy was initially blueshifted and then redshifted as the temperature increased above 40 K. Carrier thermalization and carrier transfer between QDs are used to explain the experimental data. A model of temperature-dependent linewidth broadening is employed to fit the high-temperature data. The activation energy, which was found by the simple PL intensity quenching model, of the 2.5, 3.0, and 3.5 MLs were determined to be 6.35, 9.40, and 18.87 meV, respectively.

  19. Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

    SciTech Connect

    Sengupta, S.; Halder, N.; Chakrabarti, S.

    2010-11-15

    We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 {sup o}C.

  20. InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

    NASA Astrophysics Data System (ADS)

    Lau, Kei May; Shi, Bei; Wan, Yating; Liu, Alan Y.; Li, Qiang; Zhu, Si; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.

    2017-02-01

    Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

  1. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  2. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  3. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  4. Colloidal Double Quantum Dots

    PubMed Central

    2016-01-01

    Conspectus Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole–dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single

  5. Colloidal Double Quantum Dots.

    PubMed

    Teitelboim, Ayelet; Meir, Noga; Kazes, Miri; Oron, Dan

    2016-05-17

    Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole-dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single photon

  6. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

    NASA Astrophysics Data System (ADS)

    Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May

    2016-05-01

    Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.

  7. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

    SciTech Connect

    Wan, Yating; Li, Qiang; Lau, Kei May; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.

    2016-05-30

    Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.

  8. Epitaxial Zn quantum dots coherently grown on Si(1 1 1): growth mechanism, nonlinear optical and chemical states analyses

    NASA Astrophysics Data System (ADS)

    Huang, Bo-Jia; Kao, Li-Chi; Brahma, Sanjaya; Jeng, Yu-En; Chiu, Shang-Jui; Ku, Ching-Shun; Lo, Kuang-Yao

    2017-05-01

    Oxide- and defect-free metal/semiconductor interface is important to improve Ohmic contact for the suppression of electron scattering and the avoidance of an extrinsic surface state in estimating the barrier of the Schottky contact at the nanodevice interface. This study reports the growth mechanism of Zn quantum dots coherently grown on Si(1 1 1) and the physical phenomena of the crystalline, nonlinear optics, and the chemical states of Zn quantum dots. Epitaxial Zn quantum dots were coherently formed on a non-oxide Si(1 1 1) surface through the liquid- to solid-phase transformation as a result of pattern matching between the Zn(0 0 2) and Si(1 1 1) surfaces. The growth mechanism of constrained Zn quantum dots grown through strategic magnetron radio frequency sputtering is complex. Some factors, such as substrate temperature, hydrogen gas flow, and negative DC bias, influence the configuration of epitaxial Zn quantum dots. In particular, hydrogen gas plays an important role in reducing the ZnO+ and native oxide that is bombarded by accelerated ions, thereby enhancing the Zn ion surface diffusion. The reduction reaction can be inspected by distinguishing the chemical states of ZnO/Zn quantum dots from natural oxidation or the states of Zn 3d through the analysis of x-ray absorption near the edge structure spectrum. The complex growth mechanism can be systematically understood by analyzing a noncancelled anisotropic 3 m dipole from reflective second harmonic generation and inspecting the evolution between the Zn(0 0 2) and Zn(1 1 1) peaks of the collective ZnO/Zn quantum dots in synchrotron XRD.

  9. An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

    NASA Astrophysics Data System (ADS)

    Ahia, C. C.; Tile, N.; Urgessa, Z. N.; Botha, J. R.; Neethling, J. H.

    2017-01-01

    In this work, the near-infrared photoluminescence (PL) of InSb/GaSb QD structures grown on GaSb substrate (2° off (100)) using atmospheric pressure Metalorganic Vapor Phase Epitaxy is investigated. The structures are analyzed before capping and after capping using scanning probe microscopy and high resolution transmission electron microscopy (HRTEM), respectively. At 10 K, with an excitation power of 2 mW, a PL peak at ∼ 732 meV is observed. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV is noticed. This emission typically persists up to 60-70 K, after which it becomes weak. An SPM analysis of the size distribution of uncapped dots reveals a mono-modal distribution with an average density of ∼ 5×1010 cm-2. However, a HRTEM investigation of the capped dots reveals the formation of an InGaSb quantum well-like structure, ∼ 10 nm thick, which gives rise to the PL signal mentioned above.

  10. Substrate Temperature Dependent Surface Morphology and Photoluminescence of Germanium Quantum Dots Grown by Radio Frequency Magnetron Sputtering

    PubMed Central

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, Sib Krishna; Dousti, Mohammad Reza; Kadir, Mohammed Rafiq Abdul

    2012-01-01

    The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeOx manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices. PMID:23202927

  11. Substrate temperature dependent surface morphology and photoluminescence of germanium quantum dots grown by radio frequency magnetron sputtering.

    PubMed

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, Sib Krishna; Dousti, Mohammad Reza; Kadir, Mohammed Rafiq Abdul

    2012-10-09

    The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeO(x) manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices.

  12. Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

    SciTech Connect

    Schulze, C. S.; Prohl, C.; Füllert, V.; Rybank, S.; Huang, X.; Lee, M. L.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lenz, A.

    2016-04-04

    The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

  13. Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

    SciTech Connect

    Wan, Yating; Li, Qiang; Lau, Kei May; Liu, Alan Y.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.

    2016-07-04

    Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

  14. 1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy.

    PubMed

    Wu, Cheng-Han; Chen, Hsuan-An; Lin, Shih-Yen; Wu, Chao-Hsin

    2015-08-15

    In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a 100  μm×100  μm emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at λ of 1100 nm.

  15. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

    PubMed Central

    2012-01-01

    We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing. PMID:22916827

  16. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces.

    PubMed

    Milekhin, Alexander; Yeryukov, Nikolay; Toropov, Alexander; Dmitriev, Dmitry; Sheremet, Evgeniya; Zahn, Dietrich Rt

    2012-08-23

    We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.

  17. Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang

    2016-11-01

    In this paper we report In2O3/CdSe quantum dot based non-volatile resistive memory device with ON/OFF ratio ∼1000. Indium nanostructures were grown by oblique angle deposition technique in a thermal evaporator. Indium oxide nanostructures had size ranging from 20 nm to 100 nm as observed from TEM and AFM methods. The facile device fabricated with a layer of CdSe quantum dot on indium oxide film exhibited excellent endurance characteristics over 100,000 switching cycles. Retention tests showed good stability for over 4000 s. Memory operating mechanism is proposed based on charge trapping/de-trapping in quantum dots with indium oxide acting as barrier leading to Coulomb blockade. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state.

  18. Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

    SciTech Connect

    Talochkin, A. B. Shklyaev, A. A.; Mashanov, V. I.

    2014-04-14

    Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6 nm and they form arrays with the super-high density of (5–8) × 10{sup 12} cm{sup −2} at 1–2 nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.

  19. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

    SciTech Connect

    Smagina, Zh. V.; Stepina, N. P. Zinovyev, V. A.; Kuchinskaya, P. A.; Novikov, P. L.; Dvurechenskii, A. V.

    2014-10-13

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and ridges were obtained. The shape and depth of the relief were governed by ion energy and by the number of etching stages as well. Laterally ordered chains of Ge quantum dots were fabricated by molecular beam epitaxy of Ge on the pre-patterned Si substrates. For small amount of Ge deposited chains contain separate quantum dot molecules. The increase of deposition amount leads to overlapping of quantum dot molecules with formation of dense homogeneous chains of quantum dots. It was shown that the residual irradiation-induced bulk defects underneath the grooves suppress nucleation of Ge islands at the bottom of grooves. On pre-patterned substrates with whole defect regions, etched quantum dots grow at the bottom of grooves. The observed location of Ge quantum dots is interpreted in terms of local strain-mediated surface chemical potential which controls the sites of islands nucleation. The local chemical potential is affected by additional strain formed by the residual defects. It was shown by molecular dynamics calculations that these defects form the compressive strain at the bottom of grooves.

  20. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, K.; Payette, C.; Dovzhenko, Y.; Koppinen, P.; Petta, J. R.

    2012-02-01

    We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures [1] to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve two dimensional electron gases with low charge densities and high mobilities. We extract an electron temperature of 100 mK in the single quantum dot regime. Double quantum dots fabricated on these heterostructures show clear evidence of single charge transitions [2] as measured in dc transport and charge sensing. [4pt] [1] C. B. Simmons et al, Phys. Rev. Lett. 106, 156804 (2011).[0pt] [2] R. Hanson et al, Rev. Mod. Phys. 79, 1217 (2007).

  1. Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a 'nucleation-augmented' method

    SciTech Connect

    Chia, C.K.; Chua, S.J.; Miao, Z.L.; Chye, Y.H.

    2004-07-26

    A two-stage 'nucleation-augmented' growth method for producing InAs self-assembled quantum dots (QDs) using molecular-beam epitaxy on GaAs (100) substrates has been investigated in detail. Photoluminescence (PL) measurements show that a 1.8-monolayer-(MLs) InAs QD 'nucleation' layer grown at a fast rate, followed by a 2.6-MLs-InAs 'augmented' layer grown under pulsed conditions at a slow rate, dramatically increases the dot density and improves the PL intensity for the InAs QDs. It was found that, when the effective growth rate of the InAs augmented layer was reduced, the PL peak emission shifts to a longer wavelength and the PL intensity is enhanced. These changes in characteristics were attributed to improved optical quality and greater dot density.

  2. Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001)

    SciTech Connect

    Kaizu, Toshiyuki; Taguchi, Kohei; Kita, Takashi

    2016-05-21

    We studied the structural and photoluminescence (PL) characteristics of InAs quantum dots (QDs) grown on nitrogen (N) δ-doped GaAs(001). The emission wavelength for low-density N-δ doping exhibited a blueshift with respect to that for undoped GaAs and was redshifted with increasing N-sheet density. This behavior corresponded to the variation in the In composition of the QDs. N-δ doping has two opposite and competing effects on the incorporation of Ga atoms from the underlying layer into the QDs during the QD growth. One is the enhancement of Ga incorporation induced by the lattice strain, which is due to the smaller radius of N atoms. The other is an effect blocking for Ga incorporation, which is due to the large bonding energy of Ga-N or In-N. At a low N-sheet density, the lattice-strain effect was dominant, while the blocking effect became larger with increasing N-sheet density. Therefore, the incorporation of Ga from the underlying layer depended on the N-sheet density. Since the In-Ga intermixing between the QDs and the GaAs cap layer during capping also depended on the size of the as-grown QDs, which was affected by the N-sheet density, the superposition of these three factors determined the composition of the QDs. In addition, the piezoelectric effect, which was induced with increased accumulation of lattice strain and the associated high In composition, also affected the PL properties of the QDs. As a result, tuning of the emission wavelength from 1.12 to 1.26 μm was achieved at room temperature.

  3. Quantum Dots: Theory

    SciTech Connect

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  4. Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer

    NASA Astrophysics Data System (ADS)

    An, C. S.; Jang, Y. D.; Lee, H.; Lee, D.; Song, J. D.; Choi, W. J.

    2013-05-01

    Wetting layer (WL) photoluminescence (PL) at 10 K dominated the PL spectra of low-density quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation.

  5. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

    NASA Astrophysics Data System (ADS)

    Ortiz Vázquez, F. E.; Mishurnyi, V. A.; Gorbatchev, A. Yu.; DeAnda, F.; Elyukhin, V. A.

    2009-05-01

    The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown GaxIn1-zAs QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the GaxIn-x As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

  6. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  7. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  8. Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm

    NASA Astrophysics Data System (ADS)

    Kettler, Jan; Paul, Matthias; Olbrich, Fabian; Zeuner, Katharina; Jetter, Michael; Michler, Peter

    2016-03-01

    InAs quantum dots grown on a GaAs substrate have been one of the most successful semiconductor material systems to demonstrate single-photon-based quantum optical phenomena. In this context, we present the feasibility to extend the low-temperature photoluminescence emission range of In(Ga)As/GaAs quantum dots grown by metal-organic vapor-phase epitaxy from the typical window between 880 and 960 nm to wavelengths above 1.3 μm. A low quantum dot density can be obtained throughout this range, enabling the demonstration of single- and cascaded photon emission. We further analyze polarization-resolved micro-photoluminescence from a large number of individual quantum dots with respect to anisotropy and size of the underlying fine-structure splittings in the emission spectra. For samples with elevated emission wavelengths, we observe an increasing tendency of the emitted photons to be polarized along the main crystal axes.

  9. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

    PubMed

    Lee, Andrew; Jiang, Qi; Tang, Mingchu; Seeds, Alwyn; Liu, Huiyun

    2012-09-24

    We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

  10. (In,Mn)As multilayer quantum dot structures

    SciTech Connect

    Bouravleuv, Alexei; Sapega, Victor; Nevedomskii, Vladimir; Khrebtov, Artem; Samsonenko, Yuriy; Cirlin, George

    2014-12-08

    (In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

  11. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sorokin, S. V.; Sedova, I. V.; Gronin, S. V.; Belyaev, K. G.; Rakhlin, M. V.; Toropov, A. A.; Mukhin, I. S.; Ivanov, S. V.

    2016-12-01

    We report on the molecular beam epitaxy (MBE) of heterostructures with CdTe/ZnTe quantum dots (QDs) with relatively low surface density, which could be used as single-photon emitters. The QDs were formed on the surface of a 3.1- to 4.5-monolayer-thick two-dimensional strained CdTe layer by depositing amorphous Te layer and its fast thermal desorption. Subsequent thermal annealing of the surface with QDs in the absence of external Te flux led to strong broadening and short-wavelength shift of the QD photoluminescence (PL) peak. Measurement of the micro-PL spectra of individual CdTe/ZnTe quantum dots in fabricated mesastructures with a diameter of 200—1000 nm allowed estimation of the QD surface density as 1010 cm-2.

  12. Quantum dots for biophotonics.

    PubMed

    Yong, Ken-Tye

    2012-01-01

    This theme issue provides an excellent collection of reviews and original research articles on the study of various bioconjugated quantum dot formulations for diagnostics and therapy applications using biophotonic imaging and sensing approaches.

  13. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    NASA Astrophysics Data System (ADS)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  14. Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

    PubMed Central

    2011-01-01

    InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains. PMID:21849063

  15. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

    PubMed Central

    2012-01-01

    We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. PMID:22277096

  16. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

  17. Quantum dot resonant tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Reed, Mark A.; Randall, John N.; Luscombe, James H.; Frensley, William R.; Aggarwal, Raj J.; Matyi, Richard J.; Moore, Tom M.; Wetsel, Anna E.

    The electronic transport through 3-dimensionally confined semiconductor quantum wells (quantum dots) is investigated and analyzed. The spectra corresponds to resonant tunneling from laterally-confined emitter contact subbands through the discrete 3-dimensionally confined quantum dot states. Momentum nonconservation is observed in these structures. Results on coupled quantum dot states (molccules) will be presented.

  18. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    SciTech Connect

    Shimomura, K. Kamiya, I.

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  19. Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

    PubMed

    Liang, B L; Wong, P S; Pavarelli, N; Tatebayashi, J; Ochalski, T J; Huyet, G; Huffaker, D L

    2011-02-04

    InAs quantum dot clusters (QDCs), which consist of three closely spaced QDs, are formed on nano-facets of GaAs pyramidal structures by selective-area growth using metal-organic chemical vapor deposition. Photoluminescence (PL) and time-resolved PL (TRPL) experiments, measured in the PL linewidth, peak energy and QD emission dynamics indicate lateral carrier transfer within QDCs with an interdot carrier tunneling time of 910 ps under low excitation conditions. This study demonstrates the controlled formation of laterally coupled QDCs, providing a new approach to fabricate patterned QD molecules for optical computing applications.

  20. Plasmonic fluorescent quantum dots.

    PubMed

    Jin, Yongdong; Gao, Xiaohu

    2009-09-01

    Combining multiple discrete components into a single multifunctional nanoparticle could be useful in a variety of applications. Retaining the unique optical and electrical properties of each component after nanoscale integration is, however, a long-standing problem. It is particularly difficult when trying to combine fluorophores such as semiconductor quantum dots with plasmonic materials such as gold, because gold and other metals can quench the fluorescence. So far, the combination of quantum dot fluorescence with plasmonically active gold has only been demonstrated on flat surfaces. Here, we combine fluorescent and plasmonic activities in a single nanoparticle by controlling the spacing between a quantum dot core and an ultrathin gold shell with nanometre precision through layer-by-layer assembly. Our wet-chemistry approach provides a general route for the deposition of ultrathin gold layers onto virtually any discrete nanostructure or continuous surface, and should prove useful for multimodal bioimaging, interfacing with biological systems, reducing nanotoxicity, modulating electromagnetic fields and contacting nanostructures.

  1. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    SciTech Connect

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J.; Gilfert, C.; Reithmaier, J. P.; Capua, A.; Karni, O.; Gready, D.; Eisenstein, G.; Atiya, G.; Kaplan, W. D.; Kölling, S.

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  2. 1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

    NASA Astrophysics Data System (ADS)

    Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

    2017-03-01

    Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

  3. Single-dot optical emission from ultralow density well-isolated InP quantum dots

    SciTech Connect

    Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.

    2008-10-06

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.

  4. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.

    PubMed

    Kuyanov, P; LaPierre, R R

    2015-08-07

    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  5. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

    SciTech Connect

    Kawazu, T. Noda, T.; Sakuma, Y.; Sakaki, H.

    2016-04-15

    We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

  6. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

    PubMed

    Guimard, Denis; Ishida, Mitsuru; Bordel, Damien; Li, Lin; Nishioka, Masao; Tanaka, Yu; Ekawa, Mitsuru; Sudo, Hisao; Yamamoto, Tsuyoshi; Kondo, Hayato; Sugawara, Mitsuru; Arakawa, Yasuhiko

    2010-03-12

    We investigated the effects of post-growth annealing on the photoluminescence (PL) characteristics of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD). The onset temperature at which both the peak linewidth and the PL intensity degraded and the blueshift of the ground state emission wavelength occurred was found to depend on both the QD density and the In composition of the capping layer. This behavior is particularly important in view of QD integration in photonic devices. From the knowledge of the dependences of the PL characteristics after annealing on the QD and capping growth conditions, ground state lasing at 1.30 microm could be demonstrated from InAs/GaAs QDs grown by MOCVD. Finally, we compared the laser characteristics of InAs/GaAs QDs with those of InAs/Sb:GaAs QDs, grown according to the antimony-mediated growth technique, and showed that InAs/Sb:GaAs QDs are more appropriate for laser fabrication at 1.3 microm by MOCVD.

  7. PREFACE: Quantum Dot 2010

    NASA Astrophysics Data System (ADS)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  8. Quantum Dot Sensitized Photoelectrodes

    PubMed Central

    Macdonald, Thomas J.; Nann, Thomas

    2011-01-01

    Quantum Dots (QDs) are promising alternatives to organic dyes as sensitisers for photocatalytic electrodes. This review article provides an overview of the current state of the art in this area. More specifically, different types of QDs with a special focus on heavy-metal free QDs and the methods for preparation and adsorption onto metal oxide electrodes (especially titania and zinc oxide) are discussed. Eventually, the key areas of necessary improvements are identified and assessed.

  9. Quantum DOT IR Photodetectors

    DTIC Science & Technology

    2012-07-01

    4.1.3  ROIC Control and Readout Electronics ................................................................ 16  4.2  Device measurements...the voltage of the detector modifies its spectral response. In this effort a DWELL Quantum Dot device was fabricated and tested. The results...agility. Because of delays in the fabrication of the ROIC device by MOSIS, those results will not available for the final report until approximately

  10. In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sugaya, T.; Oshima, R.; Matsubara, K.; Niki, S.

    2013-09-01

    We report the growth of In(Ga)As quantum dots (QDs) on In0.48Ga0.52P layers with and without GaAs spacer layers using solid-source molecular beam epitaxy. We can grow high quality and high density In0.4Ga0.6As and InAs QDs on In0.48Ga0.52P layers. In0.4Ga0.6As QDs with 2 nm GaAs spacer layers have high uniformity, which is confirmed by performing a photoluminescence measurement with a full-width at half maximum of 24 meV. We can control the energy difference between the In0.48Ga0.52P conduction band and the QD energy state by employing GaAs spacer layers and InAs QDs, which is a useful technique for realizing optimal intermediate-band solar cells fabricated using In(Ga)As QD structures in an In0.48Ga0.52P matrix.

  11. Plasmonic fluorescent quantum dots

    PubMed Central

    Jin, Yongdong

    2009-01-01

    Combining multiple discrete components into a single multifunctional nanoparticle could be useful in a variety of applications. Retaining the unique optical and electrical properties of each component after nanoscale integration is, however, a long-standing problem1,2. It is particularly difficult when trying to combine fluorophores such as semiconductor quantum dots with plasmonic materials such as gold, because gold and other metals can quench the fluorescence3,4. So far, the combination of quantum dot fluorescence with plasmonically active gold has only been demonstrated on flat surfaces5. Here, we combine fluorescent and plasmonic activities in a single nanoparticle by controlling the spacing between a quantum dot core and an ultrathin gold shell with nanometre precision through layer-by-layer assembly. Our wet-chemistry approach provides a general route for the deposition of ultrathin gold layers onto virtually any discrete nanostructure or continuous surface, and should prove useful for multimodal bioimaging6, interfacing with biological systems7, reducing nanotoxicity8, modulating electromagnetic fields5 and contacting nanostructures9,10. PMID:19734929

  12. Quantum transport in ballistic quantum dots

    NASA Astrophysics Data System (ADS)

    Ferry, D. K.; Akis, R. A.; Pivin, D. P., Jr.; Bird, J. P.; Holmberg, N.; Badrieh, F.; Vasileska, D.

    1998-10-01

    Carriers in small 3D quantum boxes take us from unintentional qquantum dots in MOSFETs (arising from the doping fluctuations) tto single-electron quantum dots in semiconductor hheterostructures. In between these two extremes are the realm of oopen, ballistic quantum dots, in which the transport can be quite regular. Several issues must be considered in treating the transport in these dots, among which are: (1) phase coherence within the dot; (2) the transition between semi-classical and fully quantum transport, (3) the role of the contacts, vis-à-vis the fabricated boundaries, and (4) the actual versus internal boundaries. In this paper, we discuss these issues, including the primary observables in experiment, the intrinsic nature of oscillatory behavior in magnetic field and dot size, and the connection to semi-classical transport emphasizing the importance of the filtering by the input (and output) quantum point contacts.

  13. Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

    SciTech Connect

    Paul, Matthias Kettler, Jan; Zeuner, Katharina; Clausen, Caterina; Jetter, Michael; Michler, Peter

    2015-03-23

    By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

  14. Quantum Dot Spins and Photons

    NASA Astrophysics Data System (ADS)

    Atature, Mete

    2012-02-01

    Self-assembled semiconductor quantum dots are interesting and rich physical systems. Their inherently mesoscopic nature leads to a multitude of interesting interaction mechanisms of confined spins with the solid state environment of spins, charges and phonons. In parallel, the relatively clean spin-dependent optical transitions make quantum dots strong candidates for stationary and flying qubits within the context of spin-based quantum information science. The recently observed quantum dot resonance fluorescence has become a key enabler for further progress in this context. I will first discuss the real-time optical detection (or single-shot readout) of quantum dot spins, and then I will discuss how resonance fluorescence allows coherent generation of single photons suitable (and tailored) for linear-optics quantum computation and for establishing a high-efficiency spin-photon quantum interface within a distributed quantum network.

  15. Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

    PubMed

    Chen, Siming; Liao, Mengya; Tang, Mingchu; Wu, Jiang; Martin, Mickael; Baron, Thierry; Seeds, Alwyn; Liu, Huiyun

    2017-03-06

    We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ~1.3 µm has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 °C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature.

  16. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

    PubMed

    Wan, Yating; Li, Qiang; Liu, Alan Y; Gossard, Arthur C; Bowers, John E; Hu, Evelyn L; Lau, Kei May

    2016-04-01

    Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut. The lasing threshold is as low as hundreds of microwatts, similar to the thresholds of identical lasers grown on a GaAs substrate. The heteroepitaxial structure employed here does not require the use of an absorptive germanium buffer and/or dislocation filter layers, both of which impede the efficient coupling of light from the laser active regions to silicon waveguides. This allows for full compatibility with the extensive silicon-on-insulator (SOI) technology. The large-area virtual GaAs (on Si) substrates can be directly adopted in various mature in-plane laser configurations, both optically and electrically. Thus, this demonstration represents a major advancement toward the commercial success of fully integrated silicon photonics.

  17. Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy

    NASA Astrophysics Data System (ADS)

    Moon, P.; Ha, S.-K.; Song, J. D.; Lim, J. Y.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.; Kim, J. S.; Choi, W. J.; Han, I. K.; Lee, J. I.

    2011-12-01

    We fabricated low-density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z

  18. Quantum dot cascade laser

    PubMed Central

    2014-01-01

    We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation. PACS 42.55.Px; 78.55.Cr; 78.67.Hc PMID:24666965

  19. Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

    SciTech Connect

    Seravalli, L.; Trevisi, G.; Frigeri, P.; Rivas, D.; Munoz-Matutano, G.; Suarez, I.; Alen, B.; Canet, J.; Martinez-Pastor, J. P.

    2011-04-25

    We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

  20. Scanning Quantum Dot Microscopy

    NASA Astrophysics Data System (ADS)

    Wagner, Christian; Green, Matthew F. B.; Leinen, Philipp; Deilmann, Thorsten; Krüger, Peter; Rohlfing, Michael; Temirov, Ruslan; Tautz, F. Stefan

    2015-07-01

    We introduce a scanning probe technique that enables three-dimensional imaging of local electrostatic potential fields with subnanometer resolution. Registering single electron charging events of a molecular quantum dot attached to the tip of an atomic force microscope operated at 5 K, equipped with a qPlus tuning fork, we image the quadrupole field of a single molecule. To demonstrate quantitative measurements, we investigate the dipole field of a single metal adatom adsorbed on a metal surface. We show that because of its high sensitivity the technique can probe electrostatic potentials at large distances from their sources, which should allow for the imaging of samples with increased surface roughness.

  1. Radiolytic synthesis and spectroscopic investigations of cadmium selenide quantum dots grown in cationic surfactant based quaternary water-in-oil microemulsions.

    PubMed

    Singh, S; Guleria, A; Singh, A K; Rath, M C; Adhikari, S; Sarkar, S K

    2013-05-15

    Cadmium selenide (CdSe) quantum dots (QDs) were grown in cationic surfactant cetyltrimethylammonium bromide (CTAB) based water-in-oil microemulsions using high-energy electron beam irradiation. The sizes of the primary QDs were determined from the absorption spectra as well as from high-resolution transmission electron microscope images and were found to be within 3 nm. Effects of experimental parameters, such as w0 (molar ratio of water to surfactant in a microemulsion) values and precursor concentrations on the optical properties of these QDs were investigated in detail. The QDs exhibited broad photoluminescence (PL) in the wavelength region extending from 450 to 750 nm at room temperature. The time-resolved PL showed multiexponential decay and the average lifetime was estimated to be 4.1 ns and the PL decay curve analysis indicated the presence of predominating trap state emission from the as obtained CdSe QDs. The quantum yield exhibited by as-grown QDs was determined to be 2.4%, without involving any postprocessing techniques. However, these QDs possessing ultra small size (≤5 nm) were found to exhibit CIE (Commission Internationale d'Eclairage) chromaticity x, y co-ordinates close to (0.36,0.36), which confirms their potential as white light emitters. Besides, their light emitting color tunability can be conveniently achieved just by varying the experimental parameters. Therefore, the present method employing electron beam irradiation, accompanied by various advantages of CTAB based water-in-oil microemulsion as the host matrix, offers a simple and one step method to obtain CdSe QDs possessing potential applications in white light emitting devices.

  2. Studies of silicon quantum dots prepared at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.

    2017-03-01

    In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.

  3. Microstructure and optical properties of Ge(Si) dots grown on Si

    NASA Astrophysics Data System (ADS)

    Wan, Jun; Tong, Song; Jiang, Zhimei; Jin, Gaolong; Luo, Y. H.; Liu, Jian-Lin; Liao, Xiaozhou; Zou, Jin; Wang, Kang L.

    2002-03-01

    The microstructural, luminescence properties and photoresponse of multilayer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 mm and relatively high external quantum efficiency is obtained.

  4. Efficient quantum dot-quantum dot and quantum dot-dye energy transfer in biotemplated assemblies.

    PubMed

    Achermann, Marc; Jeong, Sohee; Balet, Laurent; Montano, Gabriel A; Hollingsworth, Jennifer A

    2011-03-22

    CdSe semiconductor nanocrystal quantum dots are assembled into nanowire-like arrays employing microtubule fibers as nanoscale molecular "scaffolds." Spectrally and time-resolved energy-transfer analysis is used to assess the assembly of the nanoparticles into the hybrid inorganic biomolecular structure. Specifically, we demonstrate that a comprehensive study of energy transfer between quantum dot pairs on the biotemplate and, alternatively, between quantum dots and molecular dyes embedded in the microtubule scaffold comprises a powerful spectroscopic tool for evaluating the assembly process. In addition to revealing the extent to which assembly has occurred, the approach allows determination of particle-to-particle (and particle-to-dye) distances within the biomediated array. Significantly, the characterization is realized in situ, without need for further sample workup or risk of disturbing the solution-phase constructs. Furthermore, we find that the assemblies prepared in this way exhibit efficient quantum dot-quantum dot and quantum dot-dye energy transfer that affords faster energy-transfer rates compared to densely packed quantum dot arrays on planar substrates and to small-molecule-mediated quantum dot-dye couples, respectively.

  5. New quantum dot sensors

    NASA Astrophysics Data System (ADS)

    Gun'ko, Y. K.; Moloney, M. M.; Gallagher, S.; Govan, J.; Hanley, C.

    2010-04-01

    Quantum dots (QDs) are fluorescent semiconductor (e.g. II-VI) nanocrystals, which have a strong characteristic spectral emission. This emission is tunable to a desired energy by selecting variable particle size, size distribution and composition of the nanocrystals. QDs have recently attracted enormous interest due to their unique photophysical properties and range of potential applications in photonics and biochemistry. The main aim of our work is develop new chiral quantum dots (QDs) and establish fundamental principles influencing their structure, properties and biosensing behaviour. Here we present the synthesis and characterisation of chiral CdSe semiconductor nanoparticles and their utilisation as new chiral biosensors. Penicillamine stabilised CdSe nanoparticles have shown both very strong and very broad luminescence spectra. Circular dichroism (CD) spectroscopy studies have revealed that the D- and Lpenicillamine stabilised CdSe QDs demonstrate circular dichroism and possess almost identical mirror images of CD signals. Studies of photoluminescence and CD spectra have shown that there is a clear relationship between defect emission and CD activity. We have also demonstrated that these new QDs can serve as fluorescent nanosensors for various chiral biomolecules including nucleic acids. These novel nanosensors can be potentially utilized for detection of various chiral biological and chemical species with the broad range of potential applications.

  6. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  7. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  8. Quantum dots: Rethinking the electronics

    SciTech Connect

    Bishnoi, Dimple

    2016-05-06

    In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

  9. Quantum dots: Rethinking the electronics

    NASA Astrophysics Data System (ADS)

    Bishnoi, Dimple

    2016-05-01

    In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including "waste heat" from the sun's energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

  10. Low Threshold Quantum Dot Lasers.

    PubMed

    Iyer, Veena Hariharan; Mahadevu, Rekha; Pandey, Anshu

    2016-04-07

    Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.

  11. High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

    SciTech Connect

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Cheng, Y.; Whiteside, V. R.; Sellers, I. R.; Hossain, K.; Laghumavarapu, R. B.; Liang, B. L.; Huffaker, D. L.

    2016-03-21

    InAs quantum-dot structures were grown using a GaAs{sub 1−x}Sb{sub x} matrix on a GaAs(001) substrate. The use of GaAs{sub 1−x}Sb{sub x} for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (∼3.5 × 10{sup 11}/cm{sup 2}) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13–14% in the GaAs{sub 1−x}Sb{sub x} matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (∼90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

  12. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    SciTech Connect

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-12-04

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

  13. Controlling quantum dot energies using submonolayer bandstructure engineering

    SciTech Connect

    Yu, L.; Law, S.; Wasserman, D.; Jung, D.; Lee, M. L.; Shen, J.; Cha, J. J.

    2014-08-25

    We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77 K from 1.38 eV to 1.88 eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.

  14. Hydrophobin-Encapsulated Quantum Dots.

    PubMed

    Taniguchi, Shohei; Sandiford, Lydia; Cooper, Maggie; Rosca, Elena V; Ahmad Khanbeigi, Raha; Fairclough, Simon M; Thanou, Maya; Dailey, Lea Ann; Wohlleben, Wendel; von Vacano, Bernhard; de Rosales, Rafael T M; Dobson, Peter J; Owen, Dylan M; Green, Mark

    2016-02-01

    The phase transfer of quantum dots to water is an important aspect of preparing nanomaterials that are suitable for biological applications, and although numerous reports describe ligand exchange, very few describe efficient ligand encapsulation techniques. In this report, we not only report a new method of phase transferring quantum dots (QDs) using an amphiphilic protein (hydrophobin) but also describe the advantages of using a biological molecule with available functional groups and their use in imaging cancer cells in vivo and other imaging applications.

  15. Type-II recombination dynamics of tensile-strained GaP quantum dots in GaAs grown by droplet epitaxy

    NASA Astrophysics Data System (ADS)

    Prongjit, Patchareewan; Ratanathammaphan, Somchai; Ha, Neul; Mano, Takaaki; Sakoda, Kazuaki; Kuroda, Takashi

    2016-10-01

    We use droplet epitaxy to create tensile-strained GaP quantum dots in a GaAs matrix. A strong biaxial tensile strain leads to the formation of a type-II band lineup with a transition energy lower than the bulk GaAs band gap. The luminescence transients exhibit highly non-exponential decay behavior with an average time constant of 11 ± 2 μs, which is more than three orders of magnitude longer than the lifetime of standard type-I quantum dots. The prolonged luminescence decay time for the GaP/GaAs dots confirms the formation of the type-II band alignment associated with the tensile strain.

  16. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

    SciTech Connect

    Dupuy, E.; Regreny, P.; Robach, Y.; Gendry, M.; Chauvin, N.; Tranvouez, E.; Bremond, G.; Bru-Chevallier, C.; Patriarche, G.

    2006-09-18

    The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.

  17. Submonolayer Quantum Dot Infrared Photodetector

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  18. Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

    SciTech Connect

    Fuster, David; Rivera, Antonio; Alen, Benito; Alonso-Gonzalez, Pablo; Gonzalez, Yolanda; Gonzalez, Luisa

    2009-03-30

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4x2){r_reversible}(2x4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4x2) surface during the In deposition step and their subsequent crystallization under the As step.

  19. Optically active quantum dots

    NASA Astrophysics Data System (ADS)

    Gerard, Valerie; Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.

    2015-10-01

    The main goal of our research is to develop new types of technologically important optically active quantum dot (QD) based materials, study their properties and explore their biological applications. For the first time chiral II-VI QDs have been prepared by us using microwave induced heating with the racemic (Rac), D- and L-enantiomeric forms of penicillamine as stabilisers. Circular dichroism (CD) studies of these QDs have shown that D- and L-penicillamine stabilised particles produced mirror image CD spectra, while the particles prepared with a Rac mixture showed only a weak signal. It was also demonstrated that these QDs show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. These QDs have demonstrated highly specific chiral recognition of various biological species including aminoacids. The utilisation of chiral stabilisers also allowed the preparation of new water soluble white emitting CdS nano-tetrapods, which demonstrated circular dichroism in the band-edge region of the spectrum. Biological testing of chiral CdS nanotetrapods displayed a chiral bias for an uptake of the D- penicillamine stabilised nano-tetrapods by cancer cells. It is expected that this research will open new horizons in the chemistry of chiral nanomaterials and their application in nanobiotechnology, medicine and optical chemo- and bio-sensing.

  20. A Nanowire-Based Plasmonic Quantum Dot Laser.

    PubMed

    Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-13

    Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

  1. Quantum Entanglement of Quantum Dot Spin Using Flying Qubits

    DTIC Science & Technology

    2015-05-01

    QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS UNIVERSITY OF MICHIGAN MAY 2015 FINAL TECHNICAL REPORT APPROVED FOR PUBLIC RELEASE...To) SEP 2012 – DEC 2014 4. TITLE AND SUBTITLE QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS 5a. CONTRACT NUMBER FA8750-12-2-0333...semiconductor quantum dots doped with a single electron, made possible by the Coulomb blockade in this system. The quantum dots confine both electrons and

  2. Quantum dot quantum cascade infrared photodetector

    SciTech Connect

    Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Jun-Qi E-mail: fqliu@semi.ac.cn; Liu, Feng-Qi E-mail: fqliu@semi.ac.cn; Liu, Shu-Man; Wang, Zhan-Guo

    2014-04-28

    We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirped superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.

  3. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    SciTech Connect

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P. Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava; Kundu, Souvik

    2015-01-05

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

  4. Quantum-Dot Cellular Automata

    NASA Astrophysics Data System (ADS)

    Snider, Gregory

    2000-03-01

    Quantum-dot Cellular Automata (QCA) [1] is a promising architecture which employs quantum dots for digital computation. It is a revolutionary approach that holds the promise of high device density and low power dissipation. A basic QCA cell consists of four quantum dots coupled capacitively and by tunnel barriers. The cell is biased to contain two excess electrons within the four dots, which are forced to opposite "corners" of the four-dot cell by mutual Coulomb repulsion. These two possible polarization states of the cell will represent logic "0" and "1". Properly arranged, arrays of these basic cells can implement Boolean logic functions. Experimental results from functional QCA devices built of nanoscale metal dots defined by tunnel barriers will be presented. The experimental devices to be presented consist of Al islands, which we will call quantum dots, interconnected by tunnel junctions and lithographically defined capacitors. Aluminum/ aluminum-oxide/aluminum tunnel junctions were fabricated using a standard e-beam lithography and shadow evaporation technique. The experiments were performed in a dilution refrigerator at a temperature of 70 mK. The operation of a cell is evaluated by direct measurements of the charge state of dots within a cell as the input voltage is changed. The experimental demonstration of a functioning cell will be presented. A line of three cells demonstrates that there are no metastable switching states in a line of cells. A QCA majority gate will also be presented, which is a programmable AND/OR gate and represents the basic building block of QCA systems. The results of recent experiments will be presented. 1. C.S. Lent, P.D. Tougaw, W. Porod, and G.H. Bernstein, Nanotechnology, 4, 49 (1993).

  5. Chiral Graphene Quantum Dots.

    PubMed

    Suzuki, Nozomu; Wang, Yichun; Elvati, Paolo; Qu, Zhi-Bei; Kim, Kyoungwon; Jiang, Shuang; Baumeister, Elizabeth; Lee, Jaewook; Yeom, Bongjun; Bahng, Joong Hwan; Lee, Jaebeom; Violi, Angela; Kotov, Nicholas A

    2016-02-23

    Chiral nanostructures from metals and semiconductors attract wide interest as components for polarization-enabled optoelectronic devices. Similarly to other fields of nanotechnology, graphene-based materials can greatly enrich physical and chemical phenomena associated with optical and electronic properties of chiral nanostructures and facilitate their applications in biology as well as other areas. Here, we report that covalent attachment of l/d-cysteine moieties to the edges of graphene quantum dots (GQDs) leads to their helical buckling due to chiral interactions at the "crowded" edges. Circular dichroism (CD) spectra of the GQDs revealed bands at ca. 210-220 and 250-265 nm that changed their signs for different chirality of the cysteine edge ligands. The high-energy chiroptical peaks at 210-220 nm correspond to the hybridized molecular orbitals involving the chiral center of amino acids and atoms of graphene edges. Diverse experimental and modeling data, including density functional theory calculations of CD spectra with probabilistic distribution of GQD isomers, indicate that the band at 250-265 nm originates from the three-dimensional twisting of the graphene sheet and can be attributed to the chiral excitonic transitions. The positive and negative low-energy CD bands correspond to the left and right helicity of GQDs, respectively. Exposure of liver HepG2 cells to L/D-GQDs reveals their general biocompatibility and a noticeable difference in the toxicity of the stereoisomers. Molecular dynamics simulations demonstrated that d-GQDs have a stronger tendency to accumulate within the cellular membrane than L-GQDs. Emergence of nanoscale chirality in GQDs decorated with biomolecules is expected to be a general stereochemical phenomenon for flexible sheets of nanomaterials.

  6. A colloidal quantum dot spectrometer

    NASA Astrophysics Data System (ADS)

    Bao, Jie; Bawendi, Moungi G.

    2015-07-01

    Spectroscopy is carried out in almost every field of science, whenever light interacts with matter. Although sophisticated instruments with impressive performance characteristics are available, much effort continues to be invested in the development of miniaturized, cheap and easy-to-use systems. Current microspectrometer designs mostly use interference filters and interferometric optics that limit their photon efficiency, resolution and spectral range. Here we show that many of these limitations can be overcome by replacing interferometric optics with a two-dimensional absorptive filter array composed of colloidal quantum dots. Instead of measuring different bands of a spectrum individually after introducing temporal or spatial separations with gratings or interference-based narrowband filters, a colloidal quantum dot spectrometer measures a light spectrum based on the wavelength multiplexing principle: multiple spectral bands are encoded and detected simultaneously with one filter and one detector, respectively, with the array format allowing the process to be efficiently repeated many times using different filters with different encoding so that sufficient information is obtained to enable computational reconstruction of the target spectrum. We illustrate the performance of such a quantum dot microspectrometer, made from 195 different types of quantum dots with absorption features that cover a spectral range of 300 nanometres, by measuring shifts in spectral peak positions as small as one nanometre. Given this performance, demonstrable avenues for further improvement, the ease with which quantum dots can be processed and integrated, and their numerous finely tuneable bandgaps that cover a broad spectral range, we expect that quantum dot microspectrometers will be useful in applications where minimizing size, weight, cost and complexity of the spectrometer are critical.

  7. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Maksudur Rahman, Mohammad; Higo, Akio; Sekhar, Halubai; Erman Syazwan, Mohd; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji

    2016-03-01

    The effect of passivation films on a Si quantum dot superlattice (QDSL) was investigated to generate high photocurrent in solar-cell applications. Three types of passivation films, sputter-grown amorphous silicon carbide (a-SiC), hydrogenated a-SiC (a-SiC:H), and atomic-layer-deposited aluminum oxide (ALD-Al2O3), were used to passivate the Si QDSLs containing a stack of four 4 nm Si nanodisks (NDs) and 2 nm silicon carbide (SiC) films fabricated by neutral beam etching (NBE). Because of the high surface-to-volume ratio typically present in quantum Si-NDs formed in the top-down NBE process, there is a tendency to form larger surface dangling bonds on untreated Si-ND surfaces as well as to have short distance (<10 nm) between high-aspect-ratio nanopillars of stacked 4 nm Si-NDs/2 nm SiC films, which conventionally sputter SiC films cannot uniformly cover. Therefore, we optimized the passivation techniques with an ALD-Al2O3 film. Scanning electron microscopy (SEM) analysis helped to explain the surface morphology before and after the passivation of the QDSLs. After the completion of the passivation process, the quality of the top surface films of the QDSLs was analyzed from the surface roughness by atomic force microscopy (AFM) analysis, which revealed that ALD-Al2O3 passivated films had the smallest roughness (RMS) of 1.09 nm with respect to sputter-grown a-SiC (RMS: 1.75 nm) and a-SiC:H (RMS: 1.54 nm) films. Conductive atomic force microscopy (CAFM) revealed that ALD-Al2O3 passivation decreased the surface-leakage current as a result of proper passivation of side-wall surface defects in the QDSLs. The carrier transport characteristics were extracted from the QDSLs using the photovoltaic (PV) properties of p++/i/n+ solar cells, where the QDSLs consisted of different passivation layers acting as intermediate layers (i-layers) between the high-doping-density p++ Si (1 × 1020 cm-3) and n+ Si (1 × 1019 cm-3) substrates. High-doping-density p++ Si acted as a hole

  8. Nanoscale quantum-dot supercrystals

    NASA Astrophysics Data System (ADS)

    Baimuratov, Anvar S.; Turkov, Vadim K.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-09-01

    We develop a theory allowing one to calculate the energy spectra and wave functions of collective excitations in twoand three-dimensional quantum-dot supercrystals. We derive analytical expressions for the energy spectra of twodimensional supercrystals with different Bravias lattices, and use them to analyze the possibility of engineering the supercrystals' band structure. We demonstrate that the variation of the supercrystal's parameters (such as the symmetry of the periodic lattice and the properties of the quantum dots or their environment) enables an unprecedented control over its optical properties, thus paving a way towards the development of new nanophotonics materials.

  9. Quantum optics in coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Garrido, Mauricio

    Coupled quantum dots present an active field of study, both at the fundamental and applied level, due to their atomic and molecular-like energy structure and the ability to design and tune their parameters. Being single-photon emitters, they are systems that behave fully according to the laws of quantum mechanics. The work presented here involved the experimental study of the electro-optical properties of Indium Arsenide, coupled quantum dots. Initial experiments involved the use of spectroscopic methods such as photoluminescence and photoluminescence excitation (PLE). Through such techniques, the top dot's hole energy level structure was mapped and different types of resonant absorption were identified. The characterization of these excited states and the knowledge of how to resonantly excite into them is an integral part of the development of certain controlled spin gates in quantum computation. Additionally, a shift of the spectra in the electric field was observed with varying excitation wavelength through and above the wetting layer, which allowed for direct measurement of the optically-created electric field within the device. This extends the quantum dots' capabilities to using them as electric-field nano-probes and opens up the possibility of an all-optical, fast switching mechanism. In the course of these studies, a novel data visualization method for PLE in this type of system was developed. Finally, to study correlated photon effects, a Hanbury Brown - Twiss experiment was built which revealed bunching and antibunching signals typical of quantum statistics in biexciton cascade emissions. This is an important step towards the experimental investigation of entangled states in coupled quantum dots.

  10. Nanoscale and Single-Dot Patterning of Colloidal Quantum Dots.

    PubMed

    Xie, Weiqiang; Gomes, Raquel; Aubert, Tangi; Bisschop, Suzanne; Zhu, Yunpeng; Hens, Zeger; Brainis, Edouard; Van Thourhout, Dries

    2015-11-11

    Using an optimized lift-off process we develop a technique for both nanoscale and single-dot patterning of colloidal quantum dot films, demonstrating feature sizes down to ~30 nm for uniform films and a yield of 40% for single-dot positioning, which is in good agreement with a newly developed theoretical model. While first of all presenting a unique tool for studying physics of single quantum dots, the process also provides a pathway toward practical quantum dot-based optoelectronic devices.

  11. Optical Fiber Sensing Using Quantum Dots

    PubMed Central

    Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz

    2007-01-01

    Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms.

  12. Quantum dot behavior in graphene nanoconstrictions.

    PubMed

    Todd, Kathryn; Chou, Hung-Tao; Amasha, Sami; Goldhaber-Gordon, David

    2009-01-01

    Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In long (>/=250 nm) nanoribbons we observe transport through multiple quantum dots in series, while shorter (quantum dots. New measurements indicate that dot size may scale with constriction width. We propose a model where transport occurs through quantum dots that are nucleated by background disorder potential in the presence of a confinement gap.

  13. Colloidal quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Sargent, Edward H.

    2012-03-01

    Solar cells based on solution-processed semiconductor nanoparticles -- colloidal quantum dots -- have seen rapid advances in recent years. By offering full-spectrum solar harvesting, these cells are poised to address the urgent need for low-cost, high-efficiency photovoltaics.

  14. Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site-controlled growth of InAs quantum dots

    SciTech Connect

    Cha, K. M.; Shibata, K.; Horiuchi, I.; Kamiko, M.; Yamamoto, R.; Hirakawa, K.

    2011-12-23

    We have fabricated GaAs oxides by using atomic force microscope (AFM)-assisted anodic oxidation at various bias voltages, V{sub ox}, and studied their chemical compositions and thermal stabilities. The oxides grown at bias voltages less than 30 V desorbed after standard thermal cleaning in molecular beam epitaxy, while the oxide patterns fabricated at V{sub ox}{>=}40 V survived on the surface. We have further investigated the chemical composition of the oxides by X-ray photoemission spectroscopy. It has been found that the AFM oxides grown at V{sub ox}{approx}10 V predominantly consist of Ga{sub 2}O and GaO, whereas those grown at V{sub ox}{approx}50 V contain a Ga{sub 2}O{sub 3}-component. This result indicates that the better thermal stability of AFM oxides grown at V{sub ox}{>=}40 V can be attributed to the formation of Ga{sub 2}O{sub 3}. We grew a GaAs buffer layer on the oxide nanomasks and obtained nanoholes. After supplying InAs, selective dot nucleation took place in the nanoholes, resulting in successful formation of site-controlled QDs.

  15. Semiconductor double quantum dot micromaser.

    PubMed

    Liu, Y-Y; Stehlik, J; Eichler, C; Gullans, M J; Taylor, J M; Petta, J R

    2015-01-16

    The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold. Copyright © 2015, American Association for the Advancement of Science.

  16. Brightness-equalized quantum dots

    PubMed Central

    Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.

    2015-01-01

    As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices. PMID:26437175

  17. Brightness-equalized quantum dots.

    PubMed

    Lim, Sung Jun; Zahid, Mohammad U; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S; Condeelis, John; Smith, Andrew M

    2015-10-05

    As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices.

  18. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

    PubMed

    Tang, Mingchu; Chen, Siming; Wu, Jiang; Jiang, Qi; Dorogan, Vitaliy G; Benamara, Mourad; Mazur, Yuriy I; Salamo, Gregory J; Seeds, Alwyn; Liu, Huiyun

    2014-05-19

    We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

  19. Designing quantum dots for solotronics

    PubMed Central

    Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

    2014-01-01

    Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946

  20. Composition control and localization of S2- in CdSSe quantum dots grown from Li4[Cd10Se4(SPh)16].

    PubMed

    Lovingood, Derek D; Oyler, Ryan E; Strouse, Geoffrey F

    2008-12-17

    The development of ternary nanoscale materials with controlled cross-sectional doping is an important step for the use of chemically prepared quantum dots for nanoscale engineering applications. We report cross-sectional, elemental doping with the formation of an alloyed CdSSe nanocrystal from the thermal decomposition of Li(4)[Cd(10)Se(4)(SPh)(16)]. The sulfur incorporation arises from surface-mediated phenylthiolate degradation on the growing quantum dot surface. In the alloy, we identify a pure CdSe nucleus of approximately 1.5 nm, consistent with the predictions of nucleation theory. As the particle grows, S(2-) incorporation increases until the CdSSe reaches approximately 4 nm, where a marked reduction in phenylthiolate content on the nanocrystal is observed by CP-MAS NMR spectroscopy, implying that rapid decomposition of the phenylthiolate arises with subsequent enhanced S(2-) incorporation at the level of the stoichiometry of the reaction (namely approximately 60%). The use of molecular clusters to allow controlled defect ion incorporation can open new pathways to more complex nanomaterials.

  1. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

    SciTech Connect

    Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.; Ghosh, Arindam; Birajadar, Ravikiran B.; Ghule, Anil V.; Sharma, Ramphal

    2012-11-15

    Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

  2. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

    PubMed

    Yuryev, Vladimir A; Arapkina, Larisa V

    2011-09-05

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  3. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

    PubMed Central

    2011-01-01

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

  4. Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

    NASA Astrophysics Data System (ADS)

    Shoji, Yasushi; Narahara, Kohei; Tanaka, Hideharu; Kita, Takashi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-04-01

    We have investigated the properties of multi-stacked layers of self-organized In0.4Ga0.6As quantum dots (QDs) on GaAs (311)B grown by molecular beam epitaxy. We found that a high degree of in-plane ordering of QDs structure with a six-fold symmetry was maintained though the growth has been performed at a higher growth rate than the conventional conditions. The dependence of photoluminescence characteristics on spacer layer thickness showed an increasing degree of electronic coupling between the stacked QDs for thinner spacer layers. The external quantum efficiency for an InGaAs/GaAs quantum dot solar cell (QDSC) with a thin spacer layer thickness increased in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. Furthermore, a photocurrent production by 2-step photon absorption has been observed at room temperature for the InGaAs/GaAs QDSC with a spacer layer thickness of 15 nm.

  5. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect

    Talochkin, A. B. Chistokhin, I. B.

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  6. GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

    SciTech Connect

    Julien, Francois H.; Tchernycheva, Maria; Doyennette, Laetitia; Nevou, Laurent; Lupu, Anatole; Warde, Elias; Guillot, Fabien; Monroy, Eva; Bellet-Amalric, Edith

    2007-04-10

    We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.

  7. Plasmonic quantum dot solar concentrator

    NASA Astrophysics Data System (ADS)

    Chandra, S.; Ahmed, H.; Doran, J.; McCormack, S. J.

    2017-02-01

    The quantum dot solar concentrator optical efficiency is undermined by the parameters of re-absorption, scattering, and escape cone losses. These losses can be address through enhancing quantum dot (QDs) absorption and emission. This have been achieved through plasmonic coupling between QDs and gold nanoparticles (Au NPs). The plasmonic composite of various concertation of QDs and Au NPs were studied. The spacing between QDs and Au NPs is controlled through concentration distribution of both QD and Au NPs in the plasmonic composite, and it showed a significant increase in absorption and which is more pronounced for higher spectral overlap of QDs and surface plasmon resonance (SPR) frequency. The optimum plasmonic coupling showed a 17 % increase in the fluorescence emission for QDs in plasmonic composite. The results have shown significant enhancement in absorption, fluorescence emission for the p-QDSC.

  8. Quantitative multiplexed quantum dot immunohistochemistry

    SciTech Connect

    Sweeney, E.; Ward, T.H.; Gray, N.; Womack, C.; Jayson, G.; Hughes, A.; Dive, C.; Byers, R.

    2008-09-19

    Quantum dots are photostable fluorescent semiconductor nanocrystals possessing wide excitation and bright narrow, symmetrical, emission spectra. These characteristics have engendered considerable interest in their application in multiplex immunohistochemistry for biomarker quantification and co-localisation in clinical samples. Robust quantitation allows biomarker validation, and there is growing need for multiplex staining due to limited quantity of clinical samples. Most reported multiplexed quantum dot staining used sequential methods that are laborious and impractical in a high-throughput setting. Problems associated with sequential multiplex staining have been investigated and a method developed using QDs conjugated to biotinylated primary antibodies, enabling simultaneous multiplex staining with three antibodies. CD34, Cytokeratin 18 and cleaved Caspase 3 were triplexed in tonsillar tissue using an 8 h protocol, each localised to separate cellular compartments. This demonstrates utility of the method for biomarker measurement enabling rapid measurement of multiple co-localised biomarkers on single paraffin tissue sections, of importance for clinical trial studies.

  9. Optophononics with Coupled Quantum Dots

    DTIC Science & Technology

    2014-02-18

    the molecular polaron can be used as an efficient and tunable coherent coupler for quantum states in spatially separated low-dimensional structures...cold finger of a closed cycle microscopy cryostat and kept at a temperature of 20K. A tunable diode laser with a tuning range from about 900 to 1,000...et al. Tunable exciton relaxation in vertically coupled semiconductor InAs quantum dots. Phys. Rev. B 84, 081404(R) (2011). 10 100 1,000 0 5 A m pl ifi

  10. Ultralow Noise Monolithic Quantum Dot Photonic Oscillators

    DTIC Science & Technology

    2013-10-28

    laser, the dual-mode quantum dot laser, and the optically- injected quantum dot distributed feedback laser. The key milestones achieved were: 1.) the...distributed feedback device using optical injection to generate microwave, mm- wave and THz signals, and 5.) the generation of relaxation oscillations over...a continuous 5 octaves (below 1 GHz to 40 GHz) in an optically- injected quantum dot laser. UU N/A N/A N/A 100-200 words 15 Shannon Denetchiley (505

  11. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

    SciTech Connect

    Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

    2014-02-14

    A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped.

  12. Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers

    NASA Astrophysics Data System (ADS)

    Sadeev, T.; Arsenijević, D.; Bimberg, D.

    2016-10-01

    The dynamic properties of MOVPE grown InP/InAs quantum-dot and quantum-dash lasers, showing identical structural design, emitting in the C-band are investigated and compared to each other. Based on the small-signal measurements, we show the impact of the density of states function on the cut-off frequency, being larger for quantum dots at low currents, and reaching similar values for quantum dashes only at higher currents. The large-signal measurements show error-free data transmission at 22.5 and 17.5 Gbit/s for the quantum-dot and quantum-dash lasers.

  13. Atomistic theory of excitonic fine structure in InAs/InP nanowire quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Świderski, M.; Zieliński, M.

    2017-03-01

    Nanowire quantum dots have peculiar electronic and optical properties. In this work we use atomistic tight binding to study excitonic spectra of artificial molecules formed by a double nanowire quantum dot. We demonstrate a key role of atomistic symmetry and nanowire substrate orientation rather than cylindrical shape symmetry of a nanowire and a molecule. In particular for [001 ] nanowire orientation we observe a nonvanishing bright exciton splitting for a quasimolecule formed by two cylindrical quantum dots of different heights. This effect is due to interdot coupling that effectively reduces the overall symmetry, whereas single uncoupled [001 ] quantum dots have zero fine structure splitting. We found that the same double quantum dot system grown on [111 ] nanowire reveals no excitonic fine structure for all considered quantum dot distances and individual quantum dot heights. Further we demonstrate a pronounced, by several orders of magnitude, increase of the dark exciton optical activity in a quantum dot molecule as compared to a single quantum dot. For [111 ] systems we also show spontaneous localization of single particle states in one of nominally identical quantum dots forming a molecule, which is mediated by strain and origins from the lack of the vertical inversion symmetry in [111 ] nanostructures of overall C3 v symmetry. Finally, we study lowering of symmetry due to alloy randomness that triggers nonzero excitonic fine structure and the dark exciton optical activity in realistic nanowire quantum dot molecules of intermixed composition.

  14. Chemical bonding and defect states of LPCVD grown silicon-rich Si{sub 3}N{sub 4} for quantum dot applications

    SciTech Connect

    Mohammed, Shakil Hinkle, Christopher L.; Nimmo, Michael T.; Malko, Anton V.

    2014-03-15

    Si-rich Si{sub 3}N{sub 4} (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, deposited by low pressure chemical vapor deposition followed by furnace anneals over a range of temperatures, were determined to be comprised of two distinct phase separated SRN regions with different compositions (precipitates within a host matrix). Photoluminescence (PL) spectra showed multiple peaks convoluted together within the visible and near-visible range. Depending on deposition and annealing conditions, the films displayed changes in PL peak intensities which were correlated with chemical bonding utilizing x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and capacitance–voltage measurements. It is found that the PL originates from defect-state to defect-state and band edge to defect-state electronic transitions.

  15. Chemically grown vertically aligned 1D ZnO nanorods with CdS coating for efficient quantum dot sensitized solar cells (QDSSC): a controlled synthesis route.

    PubMed

    Mali, Sawanta S; Kim, Hyungjin; Patil, Pramod S; Hong, Chang Kook

    2013-12-28

    In the present article, vertically aligned ZnO nanorod arrays were synthesized by an aqueous chemical growth (ACG) route on a fluoride doped tin oxide (FTO) coated glass substrate. These nanorods were further sensitized with cadmium sulfide (CdS) quantum dots (QDs) by a successive ionic layer adsorption and reaction (SILAR) technique. The synthesized CdS coated ZnO nanorods were characterized for their structural and morphological properties with X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FESEM). Finally, prepared CdS coated 1D ZnO photoelectrodes were tested for their photoelectrochemical performance. Our results show that the sample deposited after 40 SILAR cycles shows 5.61 mA cm(-2) short current density (JSC) with η = 1.61% power conversion efficiency.

  16. Quantum dot lasers and integrated guided wave devices on Si

    NASA Astrophysics Data System (ADS)

    Yang, Jun; Mi, Zetian; Bhattacharya, Pallab

    2007-02-01

    We have studied the growth and characteristics of self-organized InGaAs/GaAs quantum dot lasers and their monolithic integration with waveguides and quantum well electroabsorption modulators on Si. Utilizing multiple layers of InAs quantum dots as effective dislocation filters near the GaAs-Si interface, we have demonstrated high performance quantum dot lasers grown directly on Si that exhibit, for the first time, relatively low threshold current (J th = 900 A/cm2), large characteristic temperature (T 0 = 278 K), and output slope efficiency ( >=0.3 W/A). Focused-ion-beam milling has been used to form high-quality facets for the cavity mirror and coupling groove of an integrated laser/waveguide system on Si. We have also achieved a groove-coupled laser/modulator system on Si that exhibits a coupling coefficient greater than 20% and a modulation depth of ~ 100% at 5 V reverse bias.

  17. Annealing-induced change in quantum dot chain formation mechanism

    SciTech Connect

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-15

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  18. Annealing-induced change in quantum dot chain formation mechanism

    NASA Astrophysics Data System (ADS)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-01

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  19. Colloidal quantum dots as optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra

    2007-02-01

    Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.

  20. Chiral quantum dot based materials

    NASA Astrophysics Data System (ADS)

    Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii

    2014-05-01

    Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.

  1. Few-electron quantum dots

    NASA Astrophysics Data System (ADS)

    Kouwenhoven, L. P.; Austing, D. G.; Tarucha, S.

    2001-06-01

    We review some electron transport experiments on few-electron, vertical quantum dot devices. The measurement of current versus source-drain voltage and gate voltage is used as a spectroscopic tool to investigate the energy characteristics of interacting electrons confined to a small region in a semiconducting material. Three energy scales are distinguished: the single-particle states, which are discrete due to the confinement involved; the direct Coulomb interaction between electron charges on the dot; and the exchange interaction between electrons with parallel spins. To disentangle these energies, a magnetic field is used to reorganize the occupation of electrons over the single-particle states and to induce changes in the spin states. We discuss the interactions between small numbers of electrons (between 1 and 20) using the simplest possible models. Nevertheless, these models consistently describe a large set of experiments. Some of the observations resemble similar phenomena in atomic physics, such as shell structure and periodic table characteristics, Hund's rule, and spin singlet and triplet states. The experimental control, however, is much larger than for atoms: with one device all the artificial elements can be studied by adding electrons to the quantum dot when changing the gate voltage.

  2. The statistical theory of quantum dots

    NASA Astrophysics Data System (ADS)

    Alhassid, Y.

    2000-10-01

    A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's dynamics are chaotic or diffusive, giving rise to statistical properties that reflect the interplay between one-body chaos, quantum interference, and electron-electron interactions. The conductance through such dots displays mesoscopic fluctuations as a function of gate voltage, magnetic field, and shape deformation. The techniques used to describe these fluctuations include semiclassical methods, random-matrix theory, and the supersymmetric nonlinear σ model. In open dots, the approximation of noninteracting quasiparticles is justified, and electron-electron interactions contribute indirectly through their effect on the dephasing time at finite temperature. In almost-closed dots, where conductance occurs by tunneling, the charge on the dot is quantized, and electron-electron interactions play an important role. Transport is dominated by Coulomb blockade, leading to peaks in the conductance that at low temperatures provide information on the dot's ground-state properties. Several statistical signatures of electron-electron interactions have been identified, most notably in the dot's addition spectrum. The dot's spin, determined partly by exchange interactions, can also influence the fluctuation properties of the conductance. Other mesoscopic phenomena in quantum dots that are affected by the charging energy include the fluctuations of the cotunneling conductance and mesoscopic Coulomb blockade.

  3. Multi-million atom electronic structure calculations for quantum dots

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in the field of nanoscience. The new and tunable optical and electrical properties of these artificial atoms have been proposed in a variety of different fields, for example in communication and computing systems, medical and quantum computing applications. Predictive and quantitative modeling and simulation of these structures can help to narrow down the vast design space to a range that is experimentally affordable and move this part of nanoscience to nano-Technology. Modeling of such quantum dots pose a formidable challenge to theoretical physicists because: (1) Strain originating from the lattice mismatch of the materials penetrates deep inside the buffer surrounding the quantum dots and require large scale (multi-million atom) simulations to correctly capture its effect on the electronic structure, (2) The interface roughness, the alloy randomness, and the atomistic granularity require the calculation of electronic structure at the atomistic scale. Most of the current or past theoretical calculations are based on continuum approach such as effective mass approximation or k.p modeling capturing either no or one of the above mentioned effects, thus missing some of the essential physics. The Objectives of this thesis are: (1) to model and simulate the experimental quantum dot topologies at the atomistic scale; (2) to theoretically explore the essential physics i.e. long range strain, linear and quadratic piezoelectricity, interband optical transition strengths, quantum confined

  4. Photovoltaic Current in Quantum Dots

    NASA Astrophysics Data System (ADS)

    Switkes, M.; Marcus, C. M.; Campman, K.; Gossard, A. C.

    1998-03-01

    We investigate the DC photovoltaic current, I_pv, due to coherent ``pumping'' in open ( g >= e^2/h ) quantum dots with radio-frequency modulation of the confining potential(B. Spivak, F. Zhou, and M. T. Beal Monod, Phys. Rev. B 51), p. 13226 (1995). I_pv is on the order of 20 pA≈ 10ef for a modulation frequency f = 15 MHz. The photovoltaic current exhibits mesoscopic fluctuations with magnetic field and with the static shape of the confining potential which do not appear to be correlated with fluctuations in the conductance of the dot. The photovoltaic current induced by pumping with two independent shape distortion gates depends on their relative phase; the relationship of this phase to time reversal symmetry is investigated with a view toward defining a generalized Landauer-Büttiker relation.

  5. Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si.

    PubMed

    Liu, Alan Y; Peters, Jon; Huang, Xue; Jung, Daehwan; Norman, Justin; Lee, Minjoo L; Gossard, Arthur C; Bowers, John E

    2017-01-15

    We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860  A/cm2 and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.

  6. Charge state hysteresis in semiconductor quantum dots

    SciTech Connect

    Yang, C. H.; Rossi, A. Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.

    2014-11-03

    Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

  7. A quantum dot in topological insulator nanofilm.

    PubMed

    Herath, Thakshila M; Hewageegana, Prabath; Apalkov, Vadym

    2014-03-19

    We introduce a quantum dot in topological insulator nanofilm as a bump at the surface of the nanofilm. Such a quantum dot can localize an electron if the size of the dot is large enough, ≳5 nm. The quantum dot in topological insulator nanofilm has states of two types, which belong to two ('conduction' and 'valence') bands of the topological insulator nanofilm. We study the energy spectra of such defined quantum dots. We also consider intraband and interband optical transitions within the dot. The optical transitions of the two types have the same selection rules. While the interband absorption spectra have multi-peak structure, each of the intraband spectra has one strong peak and a few weak high frequency satellites.

  8. STED nanoscopy with fluorescent quantum dots

    NASA Astrophysics Data System (ADS)

    Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.

    2015-05-01

    The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ~50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.

  9. Optically active quantum-dot molecules.

    PubMed

    Shlykov, Alexander I; Baimuratov, Anvar S; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D

    2017-02-20

    Chiral molecules made of coupled achiral semiconductor nanocrystals, also known as quantum dots, show great promise for photonic applications owing to their prospective uses as configurable building blocks for optically active structures, materials, and devices. Here we present a simple model of optically active quantum-dot molecules, in which each of the quantum dots is assigned a dipole moment associated with the fundamental interband transition between the size-quantized states of its confined charge carriers. This model is used to analytically calculate the rotatory strengths of optical transitions occurring upon the excitation of chiral dimers, trimers, and tetramers of general configurations. The rotatory strengths of such quantum-dot molecules are found to exceed the typical rotatory strengths of chiral molecules by five to six orders of magnitude. We also study how the optical activity of quantum-dot molecules shows up in their circular dichroism spectra when the energy gap between the molecular states is much smaller than the states' lifetime, and maximize the strengths of the circular dichroism peaks by optimizing orientations of the quantum dots in the molecules. Our analytical results provide clear design guidelines for quantum-dot molecules and can prove useful in engineering optically active quantum-dot supercrystals and photonic devices.

  10. Thick-shell nanocrystal quantum dots

    SciTech Connect

    Hollingsworth, Jennifer A; Chen, Yongfen; Klimov, Victor I; Htoon, Han; Vela, Javier

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  11. Research on Self-Assembling Quantum Dots.

    DTIC Science & Technology

    1995-10-30

    0K. in a second phase of this contract we turned our efforts to the fabrication and studies of self assembled quantum dots . We first demonstrated a...method for producing InAs-GasAs self assembled quantum dots (SAD) using MBE. (AN)

  12. STED nanoscopy with fluorescent quantum dots.

    PubMed

    Hanne, Janina; Falk, Henning J; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J; Hell, Stefan W

    2015-05-18

    The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ∼ 50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.

  13. Excitonic quantum interference in a quantum dot chain with rings.

    PubMed

    Hong, Suc-Kyoung; Nam, Seog Woo; Yeon, Kyu-Hwang

    2008-04-16

    We demonstrate excitonic quantum interference in a closely spaced quantum dot chain with nanorings. In the resonant dipole-dipole interaction model with direct diagonalization method, we have found a peculiar feature that the excitation of specified quantum dots in the chain is completely inhibited, depending on the orientational configuration of the transition dipole moments and specified initial preparation of the excitation. In practice, these excited states facilitating quantum interference can provide a conceptual basis for quantum interference devices of excitonic hopping.

  14. Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells

    SciTech Connect

    Tutu, F. K.; Wu, J.; Lam, P.; Tang, M.; Liu, H.; Miyashita, N.; Okada, Y.; Wilson, J.; Allison, R.

    2013-07-22

    We report enhanced solar cell performance using high-density InAs quantum dots. The high-density quantum dot was grown by antimony mediated molecular beam epitaxy. In-plane quantum dot density over 1 × 10{sup 11} cm{sup −2} was achieved by applying a few monolayers of antimony on the GaAs surface prior to quantum dot growth. The formation of defective large clusters was reduced by optimization of the growth temperature and InAs coverage. Comparing with a standard quantum dot solar cell without the incorporation of antimony, the high-density quantum dot solar cell demonstrates a distinct improvement in short-circuit current from 7.4 mA/cm{sup 2} to 8.3 mA/cm{sup 2}.

  15. Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers

    NASA Astrophysics Data System (ADS)

    Paul, Matthias; Olbrich, Fabian; Höschele, Jonatan; Schreier, Susanne; Kettler, Jan; Portalupi, Simone Luca; Jetter, Michael; Michler, Peter

    2017-07-01

    By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on InGaAs/GaAs metamorphic buffer layers on a GaAs substrate with area densities that allow addressing single quantum dots. The photoluminescence emission from the quantum dots is shifted to the telecom C-band at 1.55 μm with a high yield due to the reduced stress in the quantum dots. The lowered residual strain at the surface of the metamorphic buffer layer results in a reduced lattice mismatch between the quantum dot material and growth surface. The quantum dots exhibit resolution-limited linewidths (mean value: 59 μeV) and low fine-structure splittings. Furthermore, we demonstrate single-photon emission ( g ( 2 ) ( 0 ) = 0.003 ) at 1.55 μm and decay times on the order of 1.4 ns comparable to InAs QDs directly deposited on GaAs substrates. Our results suggest that these quantum dots can not only compete with their counterparts deposited on InP substrates but also constitute an InAs/GaAs-only approach for the development of non-classical light sources in the telecom C-band.

  16. Quantum-dot supercrystals for future nanophotonics

    PubMed Central

    Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-01-01

    The study of supercrystals made of periodically arranged semiconductor quantum dots is essential for the advancement of emerging nanophotonics technologies. By combining the strong spatial confinement of elementary excitations inside quantum dots and exceptional design flexibility, quantum-dot supercrystals provide broad opportunities for engineering desired optical responses and developing superior light manipulation techniques on the nanoscale. Here we suggest tailoring the energy spectrum and wave functions of the supercrystals' collective excitations through the variation of different structural and material parameters. In particular, by calculating the excitonic spectra of quantum dots assembled in two-dimensional Bravais lattices we demonstrate a wide variety of spectrum transformation scenarios upon alterations in the quantum dot arrangement. This feature offers unprecedented control over the supercrystal's electromagnetic properties and enables the development of new nanophotonics materials and devices.

  17. Biocompatible Quantum Dots for Biological Applications

    PubMed Central

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  18. Biocompatible Quantum Dots for Biological Applications

    SciTech Connect

    Rosenthal, Sandra; Chang, Jerry; Kovtun, Oleg; McBride, James; Tomlinson, Ian

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.

  19. Optophononics with coupled quantum dots.

    PubMed

    Kerfoot, Mark L; Govorov, Alexander O; Czarnocki, Cyprian; Lu, Davis; Gad, Youstina N; Bracker, Allan S; Gammon, Daniel; Scheibner, Michael

    2014-01-01

    Modern technology is founded on the intimate understanding of how to utilize and control electrons. Next to electrons, nature uses phonons, quantized vibrations of an elastic structure, to carry energy, momentum and even information through solids. Phonons permeate the crystalline components of modern technology, yet in terms of technological utilization phonons are far from being on par with electrons. Here we demonstrate how phonons can be employed to render a single quantum dot pair optically transparent. This phonon-induced transparency is realized via the formation of a molecular polaron, the result of a Fano-type quantum interference, which proves that we have accomplished making typically incoherent and dissipative phonons behave in a coherent and non-dissipative manner. We find the transparency to be widely tunable by electronic and optical means. Thereby we show amplification of weakest coupling channels. We further outline the molecular polaron's potential as a control element in phononic circuitry architecture.

  20. Tailoring Magnetism in Quantum Dots

    NASA Astrophysics Data System (ADS)

    Zutic, Igor; Abolfath, Ramin; Hawrylak, Pawel

    2007-03-01

    We study magnetism in magnetically doped quantum dots as a function of particle numbers, temperature, confining potential, and the strength of Coulomb interaction screening. We show that magnetism can be tailored by controlling the electron-electron Coulomb interaction, even without changing the number of particles. The interplay of strong Coulomb interactions and quantum confinement leads to enhanced inhomogeneous magnetization which persists at substantially higher temperatures than in the non-interacting case or in the bulk-like dilute magnetic semiconductors. We predict a series of electronic spin transitions which arise from the competition between the many-body gap and magnetic thermal fluctuations. Cond-mat/0612489. [1] R. Abolfath, P. Hawrylak, I. Zuti'c, preprint.

  1. Quantum dot spectroscopy using cavity quantum electrodynamics.

    PubMed

    Winger, Martin; Badolato, Antonio; Hennessy, Kevin J; Hu, Evelyn L; Imamoğlu, Ataç

    2008-11-28

    We show how cavity quantum electrodynamics using a tunable photonic crystal nanocavity in the strong-coupling regime can be used for single quantum dot spectroscopy. From the distinctive avoided crossings observed in the strongly coupled system we can identify the neutral and single positively charged exciton as well as the biexciton transitions. Moreover we are able to investigate the fine structure of those transitions and to identify a novel cavity mediated mixing of bright and dark exciton states, where the hyperfine interactions with lattice nuclei presumably play a key role. These results are enabled by a deterministic coupling scheme which allowed us to achieve unprecedented coupling strengths in excess of 150 microeV.

  2. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

    NASA Astrophysics Data System (ADS)

    Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

    2017-04-01

    InAs/GaAs quantum dot (QD) heterostructures with different covering layers (CLs) prepared by MOVPE are compared in this work. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of photoluminescence (PL) were supported by theoretical simulations. These simulations prove that the strain plays a major role in the structures. InGaAs strain reducing layer (SRL) was studied as well. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (approximately 45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb; this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality.

  3. Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Halder, Nripendra N.; Biswas, Pranab; Nagabhushan, B.; Kundu, Souvik; Biswas, D.; Banerji, P.

    2014-05-01

    Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180-300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2 V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively.

  4. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; (Frank Liu, Shengzhong

    2017-07-01

    Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm-1) and carrier concentration (2.41 × 1019 cm-3) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.

  5. Coherent optoelectronics with single quantum dots

    NASA Astrophysics Data System (ADS)

    Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.

    2008-11-01

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  6. Quantum dots in aperiodic order

    NASA Astrophysics Data System (ADS)

    Hörnquist, Michael; Ouchterlony, Thomas

    1998-12-01

    We study numerically with a Green-function technique one-dimensional arrays of quantum dots with two different models. The arrays are ordered according to the Fibonacci, the Thue-Morse, and the Rudin-Shapiro sequences. As a comparison, results from a periodically ordered chain and also from a random chain are included. The focus is on how the conductance (calculated within the Landauer-Büttiker formalism) depends on the Fermi level. In the first model, we find that in some cases rather small systems (≈60 dots) behave in the same manner as very large systems (>16,000 dots) and this makes it possible in these cases to interpret our results for the small systems in terms of the spectral properties of the infinite systems. In particular, we find that it is possible to see some consequences of the singular continuous spectra that some of the systems possess, at least for temperatures up to 100 mK. In the second model, we study the phenomenon ohmic addition, i.e. when the resistances of the constrictions add up to the total resistance. It results that of the systems studied, it is only the Rudin-Shapiro system that has this behaviour for large structures, while the resistances of the Fibonacci and the Thue-Morse systems might reach a limiting value (as a periodic system does).

  7. Biodetection using fluorescent quantum dots

    NASA Astrophysics Data System (ADS)

    Speckman, Donna M.; Jennings, Travis L.; LaLumondiere, Steven D.; Klimcak, Charles M.; Moss, Steven C.; Loper, Gary L.; Beck, Steven M.

    2002-07-01

    Multi-pathogen biosensors that take advantage of sandwich immunoassay detection schemes and utilize conventional fluorescent dye reporter molecules are difficult to make into extremely compact and autonomous packages. The development of a multi-pathogen, immunoassay-based, fiber optic detector that utilizes varying sized fluorescent semiconductor quantum dots (QDs) as the reporter labels has the potential to overcome these problems. In order to develop such a quantum dot-based biosensor, it is essential to demonstrate that QDs can be attached to antibody proteins, such that the specificity of the antibody is maintained. We have been involved in efforts to develop a reproducible method for attaching QDs to antibodies for use in biodetection applications. We have synthesized CdSe/ZnS core-shell QDs of differing size, functionalized their surfaces with several types of organic groups for water solubility, and covalently attached these functionalized QDs to rabbit anti-ovalbumin antibody protein. We also demonstrated that these labeled antibodies exhibit selective binding to ovalbumin antigen. We characterized the QDs at each step in the overall synthesis by UV-VIS absorption spectroscopy and by picosecond (psec) transient photoluminescence (TPL) spectroscopy. TPL spectroscopy measurements indicate that QD lifetime depends on the size of the QD, the intensity of the optical excitation source, and whether or not they are functionalized and conjugated to antibodies. We describe details of these experiments and discuss the impact of our results on our biosensor development program.

  8. Unraveling the Mesoscopic Character of Quantum Dots in Nanophotonics.

    PubMed

    Tighineanu, P; Sørensen, A S; Stobbe, S; Lodahl, P

    2015-06-19

    We provide a microscopic theory for semiconductor quantum dots that explains the pronounced deviations from the prevalent point-dipole description that were recently observed in spectroscopic experiments on quantum dots in photonic nanostructures. The deviations originate from structural inhomogeneities generating a large circular quantum current density that flows inside the quantum dot over mesoscopic length scales. The model is supported by the experimental data, where a strong variation of the multipolar moments across the emission spectrum of quantum dots is observed. Our work enriches the physical understanding of quantum dots and is of significance for the fields of nanophotonics, quantum photonics, and quantum-information science, where quantum dots are actively employed.

  9. On-chip quantum optics with quantum dot microcavities.

    PubMed

    Stock, E; Albert, F; Hopfmann, C; Lermer, M; Schneider, C; Höfling, S; Forchel, A; Kamp, M; Reitzenstein, S

    2013-02-06

    A novel concept for on-chip quantum optics using an internal electrically pumped microlaser is presented. The microlaser resonantly excites a quantum dot microcavity system operating in the weak coupling regime of cavity quantum electrodynamics. This work presents the first on-chip application of quantum dot microlasers, and also opens up new avenues for the integration of individual microcavity structures into larger photonic networks.

  10. Towards hybrid circuit quantum electrodynamics with quantum dots

    NASA Astrophysics Data System (ADS)

    Viennot, Jérémie J.; Delbecq, Matthieu R.; Bruhat, Laure E.; Dartiailh, Matthieu C.; Desjardins, Matthieu M.; Baillergeau, Matthieu; Cottet, Audrey; Kontos, Takis

    2016-08-01

    Cavity quantum electrodynamics allows one to study the interaction between light and matter at the most elementary level. The methods developed in this field have taught us how to probe and manipulate individual quantum systems like atoms and superconducting quantum bits with an exquisite accuracy. There is now a strong effort to extend further these methods to other quantum systems, and in particular hybrid quantum dot circuits. This could turn out to be instrumental for a noninvasive study of quantum dot circuits and a realization of scalable spin quantum bit architectures. It could also provide an interesting platform for quantum simulation of simple fermion-boson condensed matter systems. In this short review, we discuss the experimental state of the art for hybrid circuit quantum electrodynamics with quantum dots, and we present a simple theoretical modeling of experiments.

  11. Quantum dots with single-atom precision.

    PubMed

    Fölsch, Stefan; Martínez-Blanco, Jesús; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C

    2014-07-01

    Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons.

  12. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

    SciTech Connect

    Nevedomskii, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2009-12-15

    Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

  13. Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique

    NASA Astrophysics Data System (ADS)

    Shi, Bei; Lau, Kei May

    2016-01-01

    The effects of a double-cap procedure on the optical properties of an InAs/InAlGaAs quantum dots (QDs) system grown by metal-organic chemical vapor deposition (MOCVD) have been investigated by atomic force microscopy (AFM) and room temperature photoluminescence (RT-PL) spectroscopy. An optimized QD growth condition has been achieved, with an areal density of 4.6×1010 cm-2. It was found that the thickness and lattice constant of the high temperature second cap layer (SCL) were crucial for improving the integrated PL intensity and line-width of the 1.55 μm emission from the InAs/InAlGaAs QD system grown on a semi-insulating InP (100) substrate. With fine-tuned SCL thickness and lattice constant, the optical performance of the five-stack QDs was enhanced. The improvements can be attributed to the smooth growth front, observed from the AFM images, and the well-balanced stress engineering.

  14. Fluorescent Quantum Dots for Biological Labeling

    NASA Technical Reports Server (NTRS)

    McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit

    2003-01-01

    Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.

  15. Clocking an Array of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Khatun, Mahfuza; Mandell, Eric

    2000-10-01

    Preferred Session: Condensed Matter Physics Clocking an Array of Quantum Dots* Eric Mandell and M. Khatun, Ball State University. We report a theoretical analysis of the time-dependent electric field due to a line of charged rods. The effects of both the real and image charge are taken into account. The rods are biased electrostatically to study the dynamical behavior of an array of quantum dots. The barrier heights between the quantum dots are controlled by the electric field. *Supported in part by the Indiana Academy of Science, Center for Energy Research/Education/Services(CERES) and the Office of Academic Research and Sponsored Programs, Ball State University.

  16. Electronic properties of aperiodic quantum dot chains

    NASA Astrophysics Data System (ADS)

    Korotaev, P. Yu.; Vekilov, Yu. Kh.; Kaputkina, N. E.

    2012-04-01

    The electronic spectral and transport properties of aperiodic quantum dot chains are investigated. The systems with singular continuous energy spectrum are considered: Thue-Morse chain, double-periodic chain, Rudin-Shapiro chain. The influence of electronic energy in quantum dot on the spectral properties, band structure, density of states and spectral resistivity, is discussed. Low resistivity regions correspond to delocalized states and these states could be current states. Also we discuss the magnetic field application as the way to tune electronic energy in quantum dot and to obtain metallic or insulating conducting states of the systems.

  17. Quantum dot-based theranostics

    NASA Astrophysics Data System (ADS)

    Ho, Yi-Ping; Leong, Kam W.

    2010-01-01

    Luminescent semiconductor nanocrystals, also known as quantum dots (QDs), have advanced the fields of molecular diagnostics and nanotherapeutics. Much of the initial progress for QDs in biology and medicine has focused on developing new biosensing formats to push the limit of detection sensitivity. Nevertheless, QDs can be more than passive bio-probes or labels for biological imaging and cellular studies. The high surface-to-volume ratio of QDs enables the construction of a ``smart'' multifunctional nanoplatform, where the QDs serve not only as an imaging agent but also a nanoscaffold catering for therapeutic and diagnostic (theranostic) modalities. This mini review highlights the emerging applications of functionalized QDs as fluorescence contrast agents for imaging or as nanoscale vehicles for delivery of therapeutics, with special attention paid to the promise and challenges towards QD-based theranostics.

  18. Entangled exciton states in quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Bayer, Manfred

    2002-03-01

    Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

  19. Ultrasensitive solution-cast quantum dot photodetectors.

    PubMed

    Konstantatos, Gerasimos; Howard, Ian; Fischer, Armin; Hoogland, Sjoerd; Clifford, Jason; Klem, Ethan; Levina, Larissa; Sargent, Edward H

    2006-07-13

    Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D*, the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of PbS colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10(3) A W(-1). The best devices exhibited a normalized detectivity D* of 1.8 x 10(13) jones (1 jones = 1 cm Hz(1/2) W(-1)) at 1.3 microm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D* in the 10(12) jones range at room temperature, whereas the previous record for D* from a photoconductive detector lies at 10(11) jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices.

  20. Single to quadruple quantum dots with tunable tunnel couplings

    SciTech Connect

    Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K.; Otsuka, T.; Tarucha, S.

    2014-03-17

    We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.

  1. Quantum repeaters using orbitals in quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Ohshima, Toshio

    2016-09-01

    We propose quantum repeaters using quantum dot molecules, in which matter-photon entanglement is generated by Raman scatterings in lambda systems composed of various coherent exciton levels formed in the ensembles of asymmetric coupled quantum dots. In our scheme, the wavelength of Stokes and anti-Stokes photons can be chosen to fulfill the requirements of optical fiber communication. Further, the relative superposition phase in the entangled states can be stabilized by the active feedback to the gate voltage in quantum dot system. These characteristics are favorable for implementing our scheme in practice.

  2. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  3. Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2015-02-07

    Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

  4. Generation of heralded entanglement between distant quantum dot hole spins

    NASA Astrophysics Data System (ADS)

    Delteil, Aymeric

    Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of

  5. Quantum Dots Investigated for Solar Cells

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.

    2001-01-01

    The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in

  6. Field-emission from quantum-dot-in-perovskite solids

    NASA Astrophysics Data System (ADS)

    García de Arquer, F. Pelayo; Gong, Xiwen; Sabatini, Randy P.; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R.; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

    2017-03-01

    Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 1012 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.

  7. Synthetic Developments of Nontoxic Quantum Dots.

    PubMed

    Das, Adita; Snee, Preston T

    2016-03-03

    Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Spin Dynamics of Charged Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Stern, N. P.

    2005-03-01

    Colloidal semiconductor quantum dots are promising structures for controlling spin phenomena because of their highly size- tunable physical properties, ease of manufacture, and nanosecond-scale spin lifetimes at room temperature. Recent experiments have succeeded in controlling the charging of the lowest electronic state of colloidal quantum dots ootnotetextC. Wang, B. L. Wehrenberg, C. Y. Woo, and P. Guyot-Sionnest, J. Phys. Chem B 108, 9027 (2004).. Here we use time-resolved Faraday rotation measurements in the Voigt geometry to investigate the spin dynamics of colloidal CdSe quantum dot films in both a charged and uncharged state at room temperature. The charging of the film is controlled by applying a voltage in an electrochemical cell and is confirmed by absorbance measurements. Significant changes in the spin precession are observed upon charging, reflecting the voltage- controlled electron occupation of the quantum dot states and filling of surface states.

  9. Teleportation on a quantum dot array.

    PubMed

    de Pasquale, F; Giorgi, G; Paganelli, S

    2004-09-17

    We present a model of quantum teleportation protocol based on a double quantum dot array. The unknown qubit is encoded using a pair of quantum dots, with one excess electron, coupled by tunneling. It is shown how to create a maximally entangled state using an adiabatically increasing Coulomb repulsion between different dot pairs. This entangled state is exploited to perform teleportation again using an adiabatic coupling between itself and the incoming unknown state. Finally, a sudden separation of Bob's qubit allows a time evolution of Alice's, which amounts to a modified version of standard Bell measurement. A transmission over a long distance could be obtained by considering the entangled state of a chain of N coupled double quantum dots. The system is shown to be increasingly robust with N against decoherence due to phonons.

  10. Nanomaterials: Earthworms lit with quantum dots

    NASA Astrophysics Data System (ADS)

    Tilley, Richard D.; Cheong, Soshan

    2013-01-01

    Yeast, bacteria and fungi have been used to synthesize a variety of nanocrystals. Now, the metal detoxification process in the gut of an earthworm is exploited to produce biocompatible cadmium telluride quantum dots.

  11. Noninvasive detection of charge rearrangement in a quantum dot

    NASA Astrophysics Data System (ADS)

    Fricke, C.; Rogge, M. C.; Harke, B.; Reinwald, M.; Wegscheider, W.; Hohls, F.; Haug, R. J.

    2007-04-01

    We demonstrate new results on electron redistribution on a single quantum dot caused by magnetic field. A quantum point contact is used to detect changes in the quantum dot charge. We are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. These features are used to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade.

  12. First principle thousand atom quantum dot calculations

    SciTech Connect

    Wang, Lin-Wang; Li, Jingbo

    2004-03-30

    A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.

  13. Renormalization in Periodically Driven Quantum Dots.

    PubMed

    Eissing, A K; Meden, V; Kennes, D M

    2016-01-15

    We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump.

  14. Quantum dots as biophotonics tools.

    PubMed

    Cesar, Carlos L

    2014-01-01

    This chapter provides a short review of quantum dots (QDs) physics, applications, and perspectives. The main advantage of QDs over bulk semiconductors is the fact that the size became a control parameter to tailor the optical properties of new materials. Size changes the confinement energy which alters the optical properties of the material, such as absorption, refractive index, and emission bands. Therefore, by using QDs one can make several kinds of optical devices. One of these devices transforms electrons into photons to apply them as active optical components in illumination and displays. Other devices enable the transformation of photons into electrons to produce QDs solar cells or photodetectors. At the biomedical interface, the application of QDs, which is the most important aspect in this book, is based on fluorescence, which essentially transforms photons into photons of different wavelengths. This chapter introduces important parameters for QDs' biophotonic applications such as photostability, excitation and emission profiles, and quantum efficiency. We also present the perspectives for the use of QDs in fluorescence lifetime imaging (FLIM) and Förster resonance energy transfer (FRET), so useful in modern microscopy, and how to take advantage of the usually unwanted blinking effect to perform super-resolution microscopy.

  15. Positioning of quantum dots on metallic nanostructures.

    PubMed

    Kramer, R K; Pholchai, N; Sorger, V J; Yim, T J; Oulton, R; Zhang, X

    2010-04-09

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm)(2) using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  16. Positioning of quantum dots on metallic nanostructures

    NASA Astrophysics Data System (ADS)

    Kramer, R. K.; Pholchai, N.; Sorger, V. J.; Yim, T. J.; Oulton, R.; Zhang, X.

    2010-04-01

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm)2 using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  17. Semiconductor Quantum Dots with Photoresponsive Ligands.

    PubMed

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  18. Delivering quantum dots to cells: bioconjugated quantum dots for targeted and nonspecific extracellular and intracellular imaging.

    PubMed

    Biju, Vasudevanpillai; Itoh, Tamitake; Ishikawa, Mitsuru

    2010-08-01

    Bioconjugated nanomaterials offer endless opportunities to advance both nanobiotechnology and biomedical technology. In this regard, semiconductor nanoparticles, also called quantum dots, are of particular interest for multimodal, multifunctional and multiplexed imaging of biomolecules, cells, tissues and animals. The unique optical properties, such as size-dependent tunable absorption and emission in the visible and NIR regions, narrow emission and broad absorption bands, high photoluminescence quantum yields, large one- and multi-photon absorption cross-sections, and exceptional photostability are the advantages of quantum dots. Multimodal imaging probes are developed by interfacing the unique optical properties of quantum dots with magnetic or radioactive materials. Besides, crystalline structure of quantum dots adds scope for high-contrast X-ray and TEM imaging. Yet another unique feature of a quantum dot is its spacious and flexible surface which is promising to integrate multiple ligands and antibodies and construct multi-functional probes for bioimaging. In this critical review, we will summarize recent advancements in the preparation of biocompatible quantum dots, bioconjugation of quantum dots, and applications of quantum dots and their bioconjugates for targeted and nonspecific imaging of extracellular and intracellular proteins, organelles and functions (181 references).

  19. Bandgap engineering in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Chia, C. K.; Dong, J. R.; Chua, S. J.; Tripathy, S.

    2006-02-01

    Intermixing in InAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques on GaAs and InP substrates have been investigated by rapid thermal annealing (RTA) and laser-irradiation techniques. In all cases, substantial energy shifts have been observed after RTA and laser annealing. A comparison between the intermixed QD and quantum well (QW) structures shows distinguished differences in photoluminescence (PL) intensity and full-width at half-maximum (FWHM). For QD structures, an increase in PL intensity and a reduction in FWHM were observed after intermixing, whereas for QW structures the FWHM increased and the PL intensity reduced after intermixing, suggesting degradation of the material quality in the QWs after intermixing. Examination of the role of the surrounding matrix in intermixing process shows that InAs QDs placed in a InGaAs QW can retain its good optical quality after high temperature annealing, as the InGaAs QW provides a foundation for the QDs to be fully desorbed in the well.

  20. Optical Studies of Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Yükselici, H.; Allahverdi, Ç.; Aşıkoğlu, A.; Ünlü, H.; Baysal, A.; Çulha, M.; İnce, R.; İnce, A.; Feeney, M.; Athalin, H.

    Optical absorption (ABS), steady-state photoluminescence (PL), resonant Raman, and photoabsorption (PA) spectroscopies are employed to study quantum-size effects in II-VI semiconductor quantum dots (QDs) grown in glass samples. We observe a size-dependent shift in the energetic position of the first exciton peak and have examined the photoinduced evolution of the differential absorption spectra. The Raman shifts of the phonon modes are employed to monitor stoichiometric changes in the composition of the QDs during growth. Two sets of glass samples were prepared from color filters doped with CdS x Se1 - x and Zn x Cd1 - x Te. We analyze the optical properties of QDs through the ABS, PL, resonant Raman, and PA spectroscopies. The glass samples were prepared from commercially available semiconductor doped filters by a two-step thermal treatment. The average size of QDs is estimated from the energetic position of the first exciton peak in the ABS spectrum. A calculation based on a quantized-state effective mass model in the strong confinement regime predicts that the average radius of QDs in the glass samples ranges from 2.9 to 4.9 nm for CdTe and from 2.2 to 9.3 nm for CdS0. 08Se0. 92. We have also studied the nonlinear optical properties of QDs by reviewing the results of size-dependent photoinduced modulations in the first exciton band of CdTe QDs studied by PA spectroscopy.

  1. Bismides: 2D structures and quantum dots

    NASA Astrophysics Data System (ADS)

    Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Stanionytė, Sandra; Pozingytė, Evelina; Skapas, Martynas; Selskis, Algirdas; Geižutis, Andrejus; Krotkus, Arūnas

    2017-09-01

    The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.

  2. Zeeman transitions in spherical quantum dot

    NASA Astrophysics Data System (ADS)

    Yakar, Y.; ćakır, B.; Yılmazer, F.; Özmen, A.

    2017-02-01

    In this study, the effects of external magnetic field on the energy states of a spherical quantum dot with infinite potential barrier have been investigated by using Quantum Genetic Algorithm (QGA) and Hartree-Fock Roothaan (HFR) method. Linear Zeeman states and Zeeman transition energies are calculated as a function of dot radius and magnetic field strength. We also carry out the effect of external magnetic field on the ground state binding energy. The results show that the impurity energy states, binding energy and Zeeman transition energies are strongly affected by magnetic field strength and dot radius.

  3. Metamorphic quantum dots: Quite different nanostructures

    SciTech Connect

    Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

    2010-09-15

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

  4. Imaging Quantum Confinement in Multiple Graphene Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wong, Dillon; Velasco, Jairo; Lee, Juwon; Rodriguez-Nieva, Joaquin; Kahn, Salman; Vo, Phong; Tsai, Hsinzon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid; Crommie, Michael

    Quantum dots provide a useful means for controlling the electronic and spin degrees of freedom of mesoscale and nanoscale materials. Here we demonstrate a new method for fabricating interacting graphene quantum dots that is compatible with electrostatic gating and visualization by way of scanning tunneling microscopy (STM). Using this new technique we have created and spatially characterized systems of two or more interacting quantum dots. Our results show that it is possible to engineer electronic wave functions in graphene with a high degree of spatial control.

  5. Advancements in the Field of Quantum Dots

    NASA Astrophysics Data System (ADS)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  6. Quantum dots as active material for quantum cascade lasers: comparison to quantum wells

    NASA Astrophysics Data System (ADS)

    Michael, Stephan; Chow, Weng W.; Schneider, Hans Christian

    2016-03-01

    We review a microscopic laser theory for quantum dots as active material for quantum cascade lasers, in which carrier collisions are treated at the level of quantum kinetic equations. The computed characteristics of such a quantum-dot active material are compared to a state-of-the-art quantum-well quantum cascade laser. We find that the current requirement to achieve a comparable gain-length product is reduced compared to that of the quantum-well quantum cascade laser.

  7. Luminescent Quantum Dots as Ultrasensitive Biological Labels

    NASA Astrophysics Data System (ADS)

    Nie, Shuming

    2000-03-01

    Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.

  8. Quantum-dot-in-perovskite solids.

    PubMed

    Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H

    2015-07-16

    Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  9. Microsecond-sustained lasing from colloidal quantum dot solids.

    PubMed

    Adachi, Michael M; Fan, Fengjia; Sellan, Daniel P; Hoogland, Sjoerd; Voznyy, Oleksandr; Houtepen, Arjan J; Parrish, Kevin D; Kanjanaboos, Pongsakorn; Malen, Jonathan A; Sargent, Edward H

    2015-10-23

    Colloidal quantum dots have grown in interest as materials for light amplification and lasing in view of their bright photoluminescence, convenient solution processing and size-controlled spectral tunability. To date, lasing in colloidal quantum dot solids has been limited to the nanosecond temporal regime, curtailing their application in systems that require more sustained emission. Here we find that the chief cause of nanosecond-only operation has been thermal runaway: the combination of rapid heat injection from the pump source, poor heat removal and a highly temperature-dependent threshold. We show microsecond-sustained lasing, achieved by placing ultra-compact colloidal quantum dot films on a thermally conductive substrate, the combination of which minimizes heat accumulation. Specifically, we employ inorganic-halide-capped quantum dots that exhibit high modal gain (1,200 cm(-1)) and an ultralow amplified spontaneous emission threshold (average peak power of ∼50 kW cm(-2)) and rely on an optical structure that dissipates heat while offering minimal modal loss.

  10. Microsecond-sustained lasing from colloidal quantum dot solids

    PubMed Central

    Adachi, Michael M.; Fan, Fengjia; Sellan, Daniel P.; Hoogland, Sjoerd; Voznyy, Oleksandr; Houtepen, Arjan J.; Parrish, Kevin D.; Kanjanaboos, Pongsakorn; Malen, Jonathan A.; Sargent, Edward H.

    2015-01-01

    Colloidal quantum dots have grown in interest as materials for light amplification and lasing in view of their bright photoluminescence, convenient solution processing and size-controlled spectral tunability. To date, lasing in colloidal quantum dot solids has been limited to the nanosecond temporal regime, curtailing their application in systems that require more sustained emission. Here we find that the chief cause of nanosecond-only operation has been thermal runaway: the combination of rapid heat injection from the pump source, poor heat removal and a highly temperature-dependent threshold. We show microsecond-sustained lasing, achieved by placing ultra-compact colloidal quantum dot films on a thermally conductive substrate, the combination of which minimizes heat accumulation. Specifically, we employ inorganic-halide-capped quantum dots that exhibit high modal gain (1,200 cm−1) and an ultralow amplified spontaneous emission threshold (average peak power of ∼50 kW cm−2) and rely on an optical structure that dissipates heat while offering minimal modal loss. PMID:26493282

  11. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells

    NASA Astrophysics Data System (ADS)

    Debnath, Mukul C.; Liang, Baolai; Laghumavarapu, Ramesh B.; Wang, Guodong; Das, Aparna; Juang, Bor-Chau; Huffaker, Diana L.

    2017-06-01

    High-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0-8.0 monolayers were grown on a digital AlAs0.56Sb0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.

  12. Quantum analysis of plasmonic coupling between quantum dots and nanoparticles

    NASA Astrophysics Data System (ADS)

    Ahmad, SalmanOgli

    2016-10-01

    In this study, interaction between core-shells nanoparticles and quantum dots is discussed via the full-quantum-theory method. The electromagnetic field of the nanoparticles is derived by the quasistatic approximation method and the results for different regions of the nanoparticles are quantized from the time-harmonic to the wave equation. Utilizing the optical field quantization, the nanoparticles' and quantum dots' deriving amplitudes contributing to the excitation waves are determined. In the current model, two counterpropagating waves with two different frequencies are applied. We derived the Maxwell-Bloch equations from the Heisenberg-Langevin equations; thus the nanoparticles-quantum dots interaction is perused. Moreover, by full quantum analyzing of the analytical expression, the quantum-plasmonic coupling relation and the Purcell factor are achieved. We show that the spontaneous emission of quantum dots can be dramatically manipulated by engineering the plasmon-plasmon interaction in the core-shells nanoparticles. This issue is a very attractive point for designing a wide variety of quantum-plasmonic sensors. Through the investigation of the nanoparticle plasmonic interaction effects on absorbed power, the results show that the nanoparticles' and quantum dots' absorption saturation state can be switched to each other just by manipulation of their deriving amplitudes. In fact, we manage the interference between the two waves' deriving amplitudes just by the plasmonic interactions effect.

  13. Electromechanical transition in quantum dots

    NASA Astrophysics Data System (ADS)

    Micchi, G.; Avriller, R.; Pistolesi, F.

    2016-09-01

    The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nanomechanical oscillator may lead to a transition towards a mechanically bistable and blocked-current state. Its observation is at reach in carbon-nanotube state-of-art experiments. In a recent publication [Phys. Rev. Lett. 115, 206802 (2015), 10.1103/PhysRevLett.115.206802] we have shown that this transition is characterized by pronounced signatures on the oscillator mechanical properties: the susceptibility, the displacement fluctuation spectrum, and the ring-down time. These properties are extracted from transport measurements, however the relation between the mechanical quantities and the electronic signal is not always straightforward. Moreover the dependence of the same quantities on temperature, bias or gate voltage, and external dissipation has not been studied. The purpose of this paper is to fill this gap and provide a detailed description of the transition. Specifically we find (i) the relation between the current-noise and the displacement spectrum; (ii) the peculiar behavior of the gate-voltage dependence of these spectra at the transition; (iii) the robustness of the transition towards the effect of external fluctuations and dissipation.

  14. Origins and optimization of entanglement in plasmonically coupled quantum dots

    SciTech Connect

    Otten, Matthew; Larson, Jeffrey; Min, Misun; Wild, Stefan M.; Pelton, Matthew; Gray, Stephen K.

    2016-08-11

    In this paper, a system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines for maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.

  15. Origins and optimization of entanglement in plasmonically coupled quantum dots

    DOE PAGES

    Otten, Matthew; Larson, Jeffrey; Min, Misun; ...

    2016-08-11

    In this paper, a system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines formore » maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.« less

  16. Origins and optimization of entanglement in plasmonically coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Otten, Matthew; Larson, Jeffrey; Min, Misun; Wild, Stefan M.; Pelton, Matthew; Gray, Stephen K.

    2016-08-01

    A system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines for maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.

  17. Quantum dots for light emitting diodes.

    PubMed

    Qasim, Khan; Lei, Wei; Li, Qing

    2013-05-01

    In this article we discuss the development and key advantages of quantum dot based light emitting diode (QD-LED) and other applications based on their color purity, stability, and solution processibility. Analysis of quantum dot based LEDs and the main challenges faced in this field, such as the QD luminescence quenching, QD charging in thin films, and external quantum efficiency are discussed in detail. The description about how different optical down-conversion and structures enabled researchers to overcome these challenges and to commercialize the products. The recent developments about how to overcome these difficulties have also been discussed in this article.

  18. Patterned semiconductor inverted quantum dot photonic devices

    NASA Astrophysics Data System (ADS)

    Coleman, J. J.

    2016-03-01

    A novel inverted quantum dot structure is presented, which consists of an InGaAs quantum well that has been periodically perforated and then filled with the higher bandgap GaAs barrier material. This structure exhibits a unique quantized energy structure something like a planar atomic bond structure and formation of allowed and forbidden energy bands instead of highly localized, fully discrete states. We describe the growth, processing and characteristics of inverted quantum dot structures and outline interesting and potentially important effects arising from the introduction of nanoscale features (<50 nm) in the active medium.

  19. Quantum Dots: Fundamentals, Applications, and Frontiers

    NASA Astrophysics Data System (ADS)

    Joyce, Bruce A.; Kelires, Pantelis C.; Naumovets, Anton G.; Vvedensky, Dimitri D.

    This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties.

  20. Dot-in-Well Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

    2008-01-01

    Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

  1. Theoretical issues in silicon quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Koh, Teck Seng

    Electrically-gated quantum dots in semiconductors is an excellent architecture on which to make qubits for quantum information processing. Silicon is attractive because of the potential for excellent manipulability, scalability, and for integration with classical electronics. This thesis describes several aspects of the theoretical issues related to quantum dot qubits in silicon. It may be broadly divided into three parts — (1) the hybrid qubit and quantum gates, (2) decoherence and (3) charge transport. In the first part, we present a novel architecture for a double quantum dot spin qubit, which we term the hybrid qubit, and demonstrate that implementing this qubit in silicon is feasible. Next, we consider both AC and DC quantum gating protocols and compare the optimal fidelities for these protocols that can be achieved for both the hybrid qubit and the more traditional singlet-triplet qubit. In the second part, we present evidence that silicon offers superior coherence properties by analyzing experimental data from which charge dephasing and spin relaxation times are extracted. We show that the internal degrees of freedom of the hybrid qubit enhance charge coherence, and demonstrate tunable spin loading of a quantum dot. In the last part, we explain three key features of spin-dependent transport — spin blockade, lifetime-enhanced transport and spin-flip cotunneling. We explain how these features arise in the conventional two-electron as well as the unconventional three-electron regimes, using a theoretical model that captures the key characteristics observed in the data.

  2. Quantum Hall ferrimagnetism in lateral quantum dot molecules.

    PubMed

    Abolfath, Ramin M; Hawrylak, Pawel

    2006-11-03

    We demonstrate the existence of ferrimagnetic and ferromagnetic phases in a spin phase diagram of coupled lateral quantum dot molecules in the quantum Hall regime. The spin phase diagram is determined from the Hartree-Fock configuration interaction method as a function of electron number N and magnetic field B. The quantum Hall ferrimagnetic phase corresponds to spatially imbalanced spin droplets resulting from strong interdot coupling of identical dots. The quantum Hall ferromagnetic phases correspond to ferromagnetic coupling of spin polarization at filling factors between nu=2 and nu=1.

  3. Quantum efficiency of a double quantum dot microwave photon detector

    NASA Astrophysics Data System (ADS)

    Wong, Clement; Vavilov, Maxim

    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we study charge transfer through a double quantum dot (DQD) capacitively coupled to a superconducting cavity subject to a microwave field. We analyze the DQD current response using input-output theory and determine the optimal parameter regime for complete absorption of radiation and efficient conversion of microwave photons to electric current. For experimentally available DQD systems, we show that the cavity-coupled DQD operates as a photon-to-charge converter with quantum efficiencies up to 80% C.W. acknowledges support by the Intelligence Community Postdoctoral Research Fellowship Program.

  4. InN Quantum Dot Based Infra-Red Photodetectors.

    PubMed

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

  5. Engineering the hole confinement for CdTe-based quantum dot molecules

    SciTech Connect

    Kłopotowski, Ł. Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G.

    2015-06-14

    We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.

  6. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    DOEpatents

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  7. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  8. Double quantum dots defined in bilayer graphene

    NASA Astrophysics Data System (ADS)

    Żebrowski, D. P.; Peeters, F. M.; Szafran, B.

    2017-07-01

    Artificial molecular states of double quantum dots defined in bilayer graphene are studied with the atomistic tight-binding method and its low-energy continuum approximation. We indicate that the extended electron wave functions have opposite parities on sublattices of the layers and that the ground-state wave-function components change from bonding to antibonding with the interdot distance. In the weak-coupling limit, the one most relevant for quantum dots defined electrostatically, the signatures of the interdot coupling include, for the two-electron ground state, formation of states with symmetric or antisymmetric spatial wave functions split by the exchange energy. In the high-energy part of the spectrum the states with both electrons in the same dot are found with the splitting of energy levels corresponding to simultaneous tunneling of the electron pair from one dot to the other.

  9. Innovative Ge Quantum Dot Functional Sensing/Metrology Devices

    DTIC Science & Technology

    2015-05-20

    Final 3. DATES COVERED (From - To) 20140507 - 20150506 4. TITLE AND SUBTITLE Innovative Ge Quantum Dot Functional Sensing/Metrology...15. SUBJECT TERMS Quantum Dots , Germanium (Ge) quantum dot 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER...07-05-2014 to 06-05-2015 4. TITLE AND SUBTITLE Innovative Ge Quantum Dot Functional Sensing/Metrology Devices 5a. CONTRACT NUMBER FA2386-14-1

  10. Carbon quantum dots and a method of making the same

    DOEpatents

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  11. Photonic crystal-enhanced quantum dot infrared photodetectors

    NASA Astrophysics Data System (ADS)

    McKerracher, I. R.; Hattori, H. T.; Fu, L.; Tan, H. H.; Jagadish, C.

    2008-08-01

    Quantum dot infrared photodetectors (QDIPs) promise improved performance over existing technologies in the form of higher temperature operation and normal-incidence detection. Variation in the size of self-assembled quantum dots leads to a broadened spectral response, which is undesirable for multi-color detection. Photonic crystal slabs can filter the transmission of normally-incident light using Fano resonances, and thus may be integrated with QDIPs to create a narrowband detector. Finite-difference time-domain simulations were used to optimize such a filter for QDIPs grown by metal-organic chemical vapor deposition. The simulations predict that the integrated detector could show up to 76% decrease in the detector linewidth, with a tunable peak location. These devices were then fabricated by standard optical lithography, however the spectral width of the integrated device was similar to that of the unfiltered QDIP. This is attributed to imperfections in the filter, so alternative fabrication methods are discussed for future processing.

  12. Isotopically enhanced triple-quantum-dot qubit.

    PubMed

    Eng, Kevin; Ladd, Thaddeus D; Smith, Aaron; Borselli, Matthew G; Kiselev, Andrey A; Fong, Bryan H; Holabird, Kevin S; Hazard, Thomas M; Huang, Biqin; Deelman, Peter W; Milosavljevic, Ivan; Schmitz, Adele E; Ross, Richard S; Gyure, Mark F; Hunter, Andrew T

    2015-05-01

    Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking.

  13. Quantum-dot-based cell motility assay.

    PubMed

    Gu, Weiwei; Pellegrino, Teresa; Parak, Wolfgang J; Boudreau, Rosanne; Le Gros, Mark A; Gerion, Daniele; Alivisatos, A Paul; Larabell, Carolyn A

    2005-06-28

    Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.

  14. Angiogenic Profiling of Synthesized Carbon Quantum Dots.

    PubMed

    Shereema, R M; Sruthi, T V; Kumar, V B Sameer; Rao, T P; Shankar, S Sharath

    2015-10-20

    A simple method was employed for the synthesis of green luminescent carbon quantum dots (CQDs) from styrene soot. The CQDs were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, and Raman spectroscopy. The prepared carbon quantum dots did not show cellular toxicity and could successfully be used for labeling cells. We also evaluated the effects of carbon quantum dots on the process of angiogenesis. Results of a chorioallantoic membrane (CAM) assay revealed the significant decrease in the density of branched vessels after their treatment with CQDs. Further application of CQDs significantly downregulated the expression levels of pro-angiogenic growth factors like VEGF and FGF. Expression of VEGFR2 and levels of hemoglobin were also significantly lower in CAMs treated with CQDs, indicating that the CQDs inhibit angiogenesis. Data presented here also show that CQDs can selectively target cancer cells and therefore hold potential in the field of cancer therapy.

  15. Exciton binding energy in semiconductor quantum dots

    SciTech Connect

    Pokutnii, S. I.

    2010-04-15

    In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

  16. Nanopatterned Quantum Dot Lasers for High Speed, High Efficiency, Operation

    DTIC Science & Technology

    2015-04-27

    SECURITY CLASSIFICATION OF: Quantum dot (QD) active regions hold potential for realizing extremely high performance semiconductor diode lasers...2009 31-Dec-2014 Approved for Public Release; Distribution Unlimited Final Report: Nanopatterned Quantum Dot Lasers for High Speed, High Efficiency...Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 quantum dots , nanopatterning, MOCVD, laser REPORT DOCUMENTATION PAGE 11

  17. Fluorescence correlation spectroscopy using quantum dots: advances, challenges and opportunities.

    PubMed

    Heuff, Romey F; Swift, Jody L; Cramb, David T

    2007-04-28

    Semiconductor nanocrystals (quantum dots) have been increasingly employed in measuring the dynamic behavior of biomacromolecules using fluorescence correlation spectroscopy. This poses a challenge, because quantum dots display their own dynamic behavior in the form of intermittent photoluminescence, also known as blinking. In this review, the manifestation of blinking in correlation spectroscopy will be explored, preceded by an examination of quantum dot blinking in general.

  18. Quantum dot heterojunction solar cells: The mechanism of device operation and impacts of quantum dot oxidation

    NASA Astrophysics Data System (ADS)

    Ihly, Rachelle

    This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic study of the absorption properties of PbS quantum dot films exposed to air, heat, and UV illumination as a function of quantum dot size has been described. A method to improve the air-stability of films with atomic layer deposition of alumina is demonstrated. Encapsulation of quantum dot films using a protective layer of alumina results in quantum dot solids that maintain tuned absorption for 1000 hours. This thesis focuses on the use of atomic force microscopy and electrical variants thereof to study the physical and electrical characteristics of quantum dot arrays. These types of studies have broad implications in understanding charge transport mechanisms and solar cell device operation, with a particular emphasis on quantum dot transistors and solar cells. Imaging the channel potential of a PbSe quantum dot thin-film in a transistor showed a uniform distribution of charge coinciding with the transistor current voltage characteristics. In a second study, solar cell device operation of ZnO/PbS heterojunction solar cells was investigated by scanning active cross-sections with Kelvin probe microscopy as a function of applied bias, illumination and device architecture. This technique directly provides operating potential and electric field profiles to characterize drift and diffusion currents occurring in the device. SKPM established a field-free region occurring in the quantum dot layer, indicative of diffusion-limited transport. These results provide the path to optimization of

  19. Bilayer graphene quantum dot defined by topgates

    SciTech Connect

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  20. Potential clinical applications of quantum dots.

    PubMed

    Medintz, Igor L; Mattoussi, Hedi; Clapp, Aaron R

    2008-01-01

    The use of luminescent colloidal quantum dots in biological investigations has increased dramatically over the past several years due to their unique size-dependent optical properties and recent advances in biofunctionalization. In this review, we describe the methods for generating high-quality nanocrystals and report on current and potential uses of these versatile materials. Numerous examples are provided in several key areas including cell labeling, biosensing, in vivo imaging, bimodal magnetic-luminescent imaging, and diagnostics. We also explore toxicity issues surrounding these materials and speculate about the future uses of quantum dots in a clinical setting.

  1. Ambipolar quantum dots in intrinsic silicon

    SciTech Connect

    Betz, A. C. Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.

    2014-10-13

    We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.

  2. Single quantum dots as local temperature markers.

    PubMed

    Li, Sha; Zhang, Kai; Yang, Jui-Ming; Lin, Liwei; Yang, Haw

    2007-10-01

    This work describes noncontact, local temperature measurements using wavelength shifts of CdSe quantum dots (QDs). Individual QDs are demonstrated to be capable of sensing temperature variations and reporting temperature changes remotely through optical readout. Temperature profiles of a microheater under different input voltages are evaluated based on the spectral shift of QDs on the heater, and results are consistent with a one-dimensional electrothermal model. The theoretical resolution of this technique could go down to the size of a single quantum dot using far-field optics for temperature characterizations of micro/nanostructures.

  3. Trapping of an electron in coupled quantum dots in graphene

    NASA Astrophysics Data System (ADS)

    Hewageegana, Prabath; Apalkov, Vadym

    2009-03-01

    Due to Klein’s tunneling the electronic states of a quantum dot in graphene have finite widths and an electron in quantum dot has a finite trapping time. This property introduces a special type of interdot coupling in a system of many quantum dots in graphene. The interdot coupling is realized not as a direct tunneling between quantum dots but as coupling through the continuum states of graphene. As a result the interdot coupling modifies both the positions and the widths of the energy levels of the quantum dot system. We study the system of quantum dots in graphene theoretically by analyzing the complex energy spectra of the quantum dot system. We show that in a double-dot system some energy levels become strongly localized with an infinite trapping time. Such strongly localized states are achieved only at one value of the interdot separation. We also study a periodic array of quantum dots in graphene within a tight-binding mode for a quantum dot system. The values of the hopping integrals in the tight-binding model are found from the expression for the energy spectra of the double quantum dot system. In the array of quantum dots the states with infinitely large trapping time are realized at all values of interdot separation smaller than some critical value. Such states have nonzero wave vectors.

  4. Quantum criticality in a double-quantum-dot system.

    PubMed

    Zaránd, Gergely; Chung, Chung-Hou; Simon, Pascal; Vojta, Matthias

    2006-10-20

    We discuss the realization of the quantum-critical non-Fermi-liquid state, originally discovered within the two-impurity Kondo model, in double-quantum-dot systems. Contrary to common belief, the corresponding fixed point is robust against particle-hole and various other asymmetries and is unstable only to charge transfer between the two dots. We propose an experimental setup where such charge transfer processes are suppressed, allowing a controlled approach to the quantum-critical state. We also discuss transport and scaling properties in the vicinity of the critical point.

  5. Probing silicon quantum dots by single-dot techniques

    NASA Astrophysics Data System (ADS)

    Sychugov, Ilya; Valenta, Jan; Linnros, Jan

    2017-02-01

    Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

  6. Quantum-confined Stark effects in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Wen, G. W.; Lin, J. Y.; Jiang, H. X.; Chen, Z.

    1995-08-01

    Quantum-confined Stark effects (QCSE) on excitons, i.e., the influence of a uniform electric field on the confined excitons in semiconductor quantum dots (QD's), have been studied by using a numerical matrix-diagonalization scheme. The energy levels and the wave functions of the ground and several excited states of excitons in CdS and CdS1-xSex quantum dots as functions of the size of the quantum dot and the applied electric field have been obtained. The electron and hole distributions and wave function overlap inside the QD's have also been calculated for different QD sizes and electric fields. It is found that the electron and hole wave function overlap decreases under an electric field, which implies an increased exciton recombination lifetime due to QCSE. The energy level redshift and the enhancement of the exciton recombination lifetime are due to the polarization of the electron-hole pair under the applied electric field.

  7. Full-colour quantum dot displays fabricated by transfer printing

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Ho; Cho, Kyung-Sang; Lee, Eun Kyung; Lee, Sang Jin; Chae, Jungseok; Kim, Jung Woo; Kim, Do Hwan; Kwon, Jang-Yeon; Amaratunga, Gehan; Lee, Sang Yoon; Choi, Byoung Lyong; Kuk, Young; Kim, Jong Min; Kim, Kinam

    2011-03-01

    Light-emitting diodes with quantum dot luminophores show promise in the development of next-generation displays, because quantum dot luminophores demonstrate high quantum yields, extremely narrow emission, spectral tunability and high stability, among other beneficial characteristics. However, the inability to achieve size-selective quantum dot patterning by conventional methods hinders the realization of full-colour quantum dot displays. Here, we report the first demonstration of a large-area, full-colour quantum dot display, including in flexible form, using optimized quantum dot films, and with control of the nano-interfaces and carrier behaviour. Printed quantum dot films exhibit excellent morphology, well-ordered quantum dot structure and clearly defined interfaces. These characteristics are achieved through the solvent-free transfer of quantum dot films and the compact structure of the quantum dot networks. Significant enhancements in charge transport/balance in the quantum dot layer improve electroluminescent performance. A method using plasmonic coupling is also suggested to further enhance luminous efficiency. The results suggest routes towards creating large-scale optoelectronic devices in displays, solid-state lighting and photovoltaics.

  8. Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.

    PubMed

    Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin

    2017-06-27

    Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.

  9. Magnetic control of dipolaritons in quantum dots.

    PubMed

    Rojas-Arias, J S; Rodríguez, B A; Vinck-Posada, H

    2016-12-21

    Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure.

  10. Nuclear spin effects in semiconductor quantum dots.

    PubMed

    Chekhovich, E A; Makhonin, M N; Tartakovskii, A I; Yacoby, A; Bluhm, H; Nowack, K C; Vandersypen, L M K

    2013-06-01

    The interaction of an electronic spin with its nuclear environment, an issue known as the central spin problem, has been the subject of considerable attention due to its relevance for spin-based quantum computation using semiconductor quantum dots. Independent control of the nuclear spin bath using nuclear magnetic resonance techniques and dynamic nuclear polarization using the central spin itself offer unique possibilities for manipulating the nuclear bath with significant consequences for the coherence and controlled manipulation of the central spin. Here we review some of the recent optical and transport experiments that have explored this central spin problem using semiconductor quantum dots. We focus on the interaction between 10(4)-10(6) nuclear spins and a spin of a single electron or valence-band hole. We also review the experimental techniques as well as the key theoretical ideas and the implications for quantum information science.

  11. Theory of a double-quantum-dot spaser

    SciTech Connect

    Andrianov, E S; Pukhov, A A; Dorofeenko, A V; Vinogradov, A P; Lisyansky, A A

    2015-03-31

    We consider the influence of the number of quantum dots on spaser operation. It is shown that even in the presence of only two quantum dots, the spaser behaviour is qualitatively different from that of the previously studied spaser consisting of a nanoparticle and a single quantum dot. In particular, for nonzero detuning of resonant frequencies of a nanoparticle and quantum dots, an increase in the interaction constant between quantum dots first leads to a decrease in the spasing threshold and then to its growth and even the spasing breakdown. (nanostructures)

  12. Zinc sulfide quantum dots for photocatalytic and sensing applications

    NASA Astrophysics Data System (ADS)

    Sergeev, Alexander A.; Leonov, Andrei A.; Zhuikova, Elena I.; Postnova, Irina V.; Voznesenskiy, Sergey S.

    2017-09-01

    Herein, we report the photocatalytic and sensing applications of pure and Mn-doped ZnS quantum dots. The quantum dots were prepared by a chemical precipitation in an aqueous solution in the presence of glutathione as a stabilizing agent. The synthesized quantum dots were used as effective photocatalyst for the degradation of methylene blue dye. Interestingly, fully degradation of methylene blue dye was achieved in 5 min using pure ZnS quantum dots. Further, the synthesized quantum dots were used as efficient sensing element for methane fluorescent sensor. Interfering studies confirmed that the developed sensor possesses very good sensitivity and selectivity towards methane.

  13. Geometry of epitaxial GaAs/(Al,Ga)As quantum dots as seen by excitonic spectroscopy

    NASA Astrophysics Data System (ADS)

    Luo, Jun-Wei; Zunger, Alex

    2011-12-01

    It is shown that exciton and multiexciton emission lines (“spectral barcode”) of a quantum dot conceal nontrivial structural information on the shape and size of the dot, information which can be uncovered by comparison with atomistic many-body theory. Application to the newly established strain-free GaAs quantum dots grown via “droplet epitaxy” onto AlGaAs matrix reveal the shape and size as “seen” by spectroscopy. The results show that the previously determined dot height (˜14 nm) as “seen” by cross-sectional scanning tunneling microscopy (XSTM) could not possibly be consistent with the excitonic signature (1.7-1.9 eV), as the latter must reflect dot height of 1-4 nm. Multiexciton “barcode” and fine structure spitting suggest GaAs/AlGaAs dots are in Gaussian-shape in agreement with XSTM measurement. Both spectroscopy and XSTM measurements were done on GaAs dots capped by the Al0.3Ga0.7As barrier layer. The fact that XSTM sees tall dots and spectroscopy sees short dots is thus not because the dot change its height in one experiment relative to the other but because different dots must have been used. This was uncovered by theoretical simulation of the experiment showing that the two experiments could not possibly correspond to the same dot.

  14. Electrostatically confined trilayer graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Mirzakhani, M.; Zarenia, M.; Vasilopoulos, P.; Peeters, F. M.

    2017-04-01

    Electrically gating of trilayer graphene (TLG) opens a band gap offering the possibility to electrically engineer TLG quantum dots. We study the energy levels of such quantum dots and investigate their dependence on a perpendicular magnetic field B and different types of stacking of the graphene layers. The dots are modeled as circular and confined by a truncated parabolic potential which can be realized by nanostructured gates or position-dependent doping. The energy spectra exhibit the intervalley symmetry EKe(m ) =-EK'h(m ) for the electron (e ) and hole (h ) states, where m is the angular momentum quantum number and K and K ' label the two valleys. The electron and hole spectra for B =0 are twofold degenerate due to the intervalley symmetry EK(m ) =EK'[-(m +1 ) ] . For both ABC [α =1.5 (1.2) for large (small) R ] and ABA (α =1 ) stackings, the lowest-energy levels show approximately a R-α dependence on the dot radius R in contrast with the 1 /R3 one for ABC-stacked dots with infinite-mass boundary. As functions of the field B , the oscillator strengths for dipole-allowed transitions differ drastically for the two types of stackings.

  15. Germanium quantum dots: Optical properties and synthesis

    NASA Astrophysics Data System (ADS)

    Heath, James R.; Shiang, J. J.; Alivisatos, A. P.

    1994-07-01

    Three different size distributions of Ge quantum dots (≳200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x-ray powder diffraction, x-ray photoemission, infrared spectroscopy, and Raman spectroscopy. Colloidal suspensions of these quantum dots were prepared and their extinction spectra are measured with ultraviolet/visible (UV/Vis) and near infrared (IR) spectroscopy, in the regime from 0.6 to 5 eV. The optical spectra are correlated with a Mie theory extinction calculation utilizing bulk optical constants. This leads to an assignment of three optical features to the E(1), E(0'), and E(2) direct band gap transitions. The E(0') transitions exhibit a strong size dependence. The near IR spectra of the largest dots is dominated by E(0) direct gap absorptions. For the smallest dots the near IR spectrum is dominated by the Γ25→L indirect transitions.

  16. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  17. Merging quantum dots, biomolecules, and polymers for record performance from solution-processed optoelectronics

    NASA Astrophysics Data System (ADS)

    Sargent, Edward H.

    2006-02-01

    We apply discoveries in nanoscience towards applications relevant to health, environment, security, and connectedness. A materials fundamental to our research is the quantum dot. Each quantum dot is a particle of semiconductor only a few nanometers in diameter. These semiconductor nanoparticles confine electrons to within their characteristic wavelength. Thus, just as changing the length of a guitar string changes the frequency of sound produced, so too does changing the size of a quantum dot alter the frequency - hence energy - the electron can adopt. As a result, quantum dots are tunable matter (Fig. 2). We work with colloidal quantum dots, nanoparticles produced in, and processed from, solution. They can be coated onto nearly anything - a semiconductor substrate, a window, a wall, fabric. Compared to epitaxially-grown semiconductors used to make optical detectors, lasers, and modulators, they are cheap, safe to work with, and easy to produce. Much of our work with quantum dots involves infrared light - its measurement, production, modulation, and harnessing. While there exists an abundance of work in colloidal quantum dots active in the visible, there are fewer results in the infrared. The wavelengths between 1000 and 2000 nm are nonetheless of great practical importance: half of the sun's power reaching the earth lies in this wavelength range; 'biological windows' in which tissue is relatively transparent and does not emit background light (autofluorescence) exist in the infrared; fiber-optic networks operate at 1.3 and 1.5 um.

  18. Slow Electron Cooling in Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Pandey, Anshu; Guyot-Sionnest, Philippe

    2008-11-01

    Hot electrons in semiconductors lose their energy very quickly (within picoseconds) to lattice vibrations. Slowing this energy loss could prove useful for more efficient photovoltaic or infrared devices. With their well-separated electronic states, quantum dots should display slow relaxation, but other mechanisms have made it difficult to observe. We report slow intraband relaxation (>1 nanosecond) in colloidal quantum dots. The small cadmium selenide (CdSe) dots, with an intraband energy separation of ~0.25 electron volts, are capped by an epitaxial zinc selenide (ZnSe) shell. The shell is terminated by a CdSe passivating layer to remove electron traps and is covered by ligands of low infrared absorbance (alkane thiols) at the intraband energy. We found that relaxation is markedly slowed with increasing ZnSe shell thickness.

  19. Quantum dot at a Luttinger liquid edge

    NASA Astrophysics Data System (ADS)

    Rylands, Colin; Andrei, Natan

    2017-09-01

    We study a system consisting of a Luttinger liquid coupled to a quantum dot on the boundary. The Luttinger liquid is expressed in terms of fermions interacting via density-density coupling, and the dot is modeled as an interacting resonant level onto which the bulk fermions can tunnel. We solve the Hamiltonian exactly and construct all eigenstates. We study both the zero- and finite-temperature properties of the system, in particular, we compute the exact dot occupation as a function of the dot energy in all parameter regimes. The system is seen to flow from weak to strong coupling for all values of the bulk interaction, with the flow characterized by a nonperturbative Kondo scale. We identify the critical exponents at the weak- and strong-coupling regimes.

  20. New small quantum dots for neuroscience

    NASA Astrophysics Data System (ADS)

    Selvin, Paul

    2014-03-01

    In "New Small Quantum Dots for Neuroscience," Paul Selvin (University of Illinois, Urbana-Champaign) notes how the details of synapsis activity in the brain involves chemical receptors that facilitate the creation of the electrical connection between two nerves. In order to understand the details of this neuroscience phenomenon you need to be able to "see" what is happening at the scale of these receptors, which is around 10 nanometers. This is smaller than the diffraction limit of normal microscopy and it takes place on a 3 dimensional structure. Selvin describes the development of small quantum dots (on the order of 6-9 microns) that are surface-sensitized to interact with the receptors. This allows the application of photo-activated localized microscopy (PALM), a superresolution microscopy that can be scanned through focus to develop a 3D map on a scale that is the same size as the emitter, which in this case are the small quantum dots. The quantum dots are stable in time and provide access to the receptors which allows the imaging of the interactions taking place at the synoptic level.

  1. Producing Quantum Dots by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius

    2006-01-01

    An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.

  2. Nanocomposites of POC and quantum dots

    NASA Astrophysics Data System (ADS)

    Borriello, C.; Concilio, S.; Minarini, C.; Iannelli, P.; Di Luccio, T.

    2012-07-01

    New luminescent polymer nanocomposites were synthesized combining carbazole/oxadiazole copolymer (POC) and CdSe/ZnS quantum dots (QDs) surface passivated by ionic liquids. Ionic liquid ligands improve the photostability of QDs and their compatibility with polymer allowing the deposition of homogeneous nanocomposites films. The nanocomposites were characterized by UV and photoluminescence spectroscopy.

  3. Spin Wigner molecules in quantum dots

    NASA Astrophysics Data System (ADS)

    Zutic, Igor; Oszwaldowski, Rafal; Stano, Peter; Petukhov, A. G.

    2013-03-01

    The interplay of confinement and Coulomb interactions in quantum dots can lead to strongly correlated phases differing qualitatively from the Fermi liquid behavior. While in three dimensions the correlation-induced Wigner crystal is elusive and expected only in the limit of an extremely low carrier density, its nanoscale analog, the Wigner molecule, has been observed in quantum dots at much higher densities [1]. We explore how the presence of magnetic impurities in quantum dots can provide additional opportunities to study correlation effects and the resulting ordering in carrier and impurity spins[2]. By employing exact diagonalization we reveal that seemingly simple two-carrier quantum dots lead to a rich phase diagram [2,3]. We propose experiments to verify our predictions; in particular, we discuss interband optical transitions as a function of temperature and magnetic field. DOE-BES, meta-QUTE 259 ITMS NFP Grant No. 26240120022, CE SAS QUTE, EU 260 Project Q-essence, Grant No. APVV-0646-10, and SCIEX.

  4. Quantum-dot infrared photodetectors: a review

    NASA Astrophysics Data System (ADS)

    Stiff-Roberts, Adrienne D.

    2009-04-01

    Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (>=150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.

  5. Optical properties of quantum-dot-doped liquid scintillators

    NASA Astrophysics Data System (ADS)

    Aberle, C.; Li, J. J.; Weiss, S.; Winslow, L.

    2013-10-01

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.

  6. Optical properties of quantum-dot-doped liquid scintillators.

    PubMed

    Aberle, C; Li, J J; Weiss, S; Winslow, L

    2013-10-14

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.

  7. Photonic crystal nanocavity laser with a single quantum dot gain.

    PubMed

    Nomura, Masahiro; Kumagai, Naoto; Iwamoto, Satoshi; Ota, Yasutomo; Arakawa, Yasuhiko

    2009-08-31

    We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample (1.5 x 10(8) cm(-2)) is used so that a single quantum dot can be isolated from the surrounding quantum dots. Laser oscillation begins at a pump power of 42 nW under resonant condition, while the far-detuning conditions require ~145 nW for lasing. This spectral detuning dependence of laser threshold indicates substantial contribution of the single quantum dot to the total gain. Moreover, photon correlation measurements show a distinct transition from anti-bunching to Poissonian via bunching with the increase of the excitation power, which is also an evidence of laser oscillation using the single quantum dot gain.

  8. Optical properties of quantum-dot-doped liquid scintillators

    PubMed Central

    Aberle, C.; Li, J.J.; Weiss, S.; Winslow, L.

    2014-01-01

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO. PMID:25392711

  9. Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

    SciTech Connect

    Belhadj, T.; Amand, T.; Kunz, S.; Marie, X.; Urbaszek, B.; Kunold, A.; Simon, C.-M.; Kuroda, T.; Abbarchi, M.; Mano, T.; Sakoda, K.

    2010-08-02

    We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

  10. Quantum Dot Cellular Automata: Computing with Coupled Quantum-Dot Molecules

    NASA Astrophysics Data System (ADS)

    Porod, Wolfgang

    1998-05-01

    We have recently proposed a scheme of using coupled quantum dots to realize digital computing elements.(C. S. Lent, P. D. Tougaw, W. Porod, and G. H. Bernstein, Nanotechnology 4, 49 (1993); C. S. Lent, P. D. Tougaw, and W. Porod, Applied Physics Letters 62, 714 (1993).) Our scheme was inspired by recent work on nanometer-scale lithography in semiconductors which has permitted the construction of quantum dots which may be viewed as artificial atoms; furthermore, the principle of dot-dot coupling has also been demonstrated, thus realizing artificial semiconductor molecules. This talk will review the work of the Notre Dame group on the theory and modeling of cellular arrays of coupled quantum-dot molecules, which we refer to as quantum-dot cellular automata (QCA). We consider inhomogeneous arrays of quantum-dot molecules, where each molecule forms the basic unit in a cellular automaton-type array architecture. These cells (molecules) consists of four or five quantum dots in close enough proximity to enable electron tunneling between dots. Coulomb repulsion between electrons in the cell results in a bistable ground state whose configuration is determined by the configuration of neighboring cells. The electrons tend to occupy antipodal sites in one of two ground-state configurations which may be used to encode binary information. We have demonstrated that Boolean logic gates can be constructed, and simple design rules permit the fabrication of any logic function. The basic principle of QCA operation was demonstrated in recent experiments.(A. O. Orlov, I. Amlani, G. H. Bernstein, C. S. Lent, and G. L. Snider, Science 277, 928, (1997).)

  11. InGaAs quantum dot structures grown in GaAs barrier by metal-organic chemical vapor deposition for high-efficient long-wavelength emission

    NASA Astrophysics Data System (ADS)

    Passaseo, Adriana; Tasco, Vittorianna; De Giorgi, Milena; Todaro, Maria T.; Tarantini, Iolena; Cingolani, Roberto; De Vittorio, Massimo

    2004-06-01

    In this work we present a method to obtain room temperature ground state emission beyond 1.3 μm from InGaAs QDs, grown by MOCVD, embedded directly into a binary GaAs matrix. The wavelength is tuned from 1.26 μm up to 1.33 μm by varying the V/III ratio during the growth of the GaAs cap layer, without using seeding layer or InGaAs wells. A line-shape narrowing (from 36 meV to 24 meV) and a strong reduction of the temperature dependent quenching of the emission (down to a factor 3 from 10K to 300K) are observed, that represent the best value reported for QD structures emitting at 1.3 μm. The results are explained in term different morphological evolution and surface reconstruction undergone by the InGaAs islands during the GaAs overgrowth that result in larger QD size and in lower In-Ga intermixing. Indeed, cross sectional TEM images show an increase in the QD size of more than 30% with decreasing the AsH3 flow. The overall strain reduction due to the use of the GaAs matrix allows the fabrication of highly efficient staked QD layers. The single and multiple QDs samples show a systematic increase of the emission intensity and similar spectral shape.

  12. Non-Markovian full counting statistics in quantum dot molecules.

    PubMed

    Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming

    2015-03-10

    Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules.

  13. Non-Markovian full counting statistics in quantum dot molecules

    PubMed Central

    Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming

    2015-01-01

    Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules. PMID:25752245

  14. Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

    SciTech Connect

    Beltran, AM; Ben, Teresa; Sales, David; Sanchez, AM; Ripalda, JM; Taboada, Alfonso G; Varela del Arco, Maria; Pennycook, Stephen J; Molina, S. I.

    2011-01-01

    We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.

  15. Growth scheme for quantum dots with low fine structure splitting at telecom wavelengths (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Muller, Tina; Skiba-Szymanska, Joanna; Stevenson, R. Mark; Varnava, Christiana; Felle, Martin; Huwer, Jan; Farrer, Ian; Krysa, Andrey B.; Spencer, Peter; Ritchie, David A.; Heffernan, Jon; Shields, Andrew J.

    2017-02-01

    Quantum dots based on InAs/InP hold the promise to deliver entangled photons with wavelength suitable for the standard telecom window around 1550 nm, which makes them predestined to be used in future quantum networks applications based on existing fiber optics infrastructure. A prerequisite for the generation of such entangled photons is a small fine structure splitting (FSS) in the quantum dot excitonic eigenstates, as well as the ability to integrate the dot into photonic structures to enhance and direct its emission. Using optical spectroscopy, we show that a growth strategy based on droplet epitaxy can simultaneously address both issues. Contrary to the standard Stranski-Krastanow technique, droplet epitaxy dots do not rely on material strains during growth, which results in a drastic improvement in dot symmetry. As a consequence, the average exciton FSS is reduced by more than a factor 4, which in fact makes all the difference between easily finding a dot with the required FSS and not finding one at all. Furthermore, we demonstrate that droplet epitaxy dots can be grown on the necessary surface (001) for high quality optical microcavities, which increases dot emission count rates by more than a factor of five. Together, these properties make droplet epitaxy quantum dots readily suitable for the generation of entangled photons at telecom wavelengths.

  16. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate.

    PubMed

    Yakimov, Andrew; Kirienko, Victor; Armbrister, Vladislav; Dvurechenskii, Anatolii

    2013-05-08

    : We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of -3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.

  17. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

    PubMed Central

    2013-01-01

    We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage. PMID:23651470

  18. Carbon nanotube quantum dots on hexagonal boron nitride

    SciTech Connect

    Baumgartner, A. Abulizi, G.; Gramich, J.; Schönenberger, C.; Watanabe, K.; Taniguchi, T.

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  19. Quantum Dots and Their Multimodal Applications: A Review

    PubMed Central

    Bera, Debasis; Qian, Lei; Tseng, Teng-Kuan; Holloway, Paul H.

    2010-01-01

    Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence) or electric field (electroluminescence). In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  20. Laterally-biased quantum dot infrared photodetector

    NASA Astrophysics Data System (ADS)

    Cardimona, D. A.; Morath, C. P.; Guidry, D. H.; Cowan, V. M.

    2013-07-01

    At the Air Force Research Laboratory, Space Vehicles Directorate, we are interested in improving the performance of or modifying the capabilities of infrared detectors in order to locate and identify dim and/or distant objects in space. One characteristic we are very interested in is multicolor detection. To this end, we have turned to a novel detector design that we have come to call a Lateral Quantum Dot Infrared Photodetector (LQDIP). In this design, InAs quantum dots are buried in a GaAs quantum well, which in turn is tunnel-coupled to another GaAs quantum well. Photoexcited electrons from the quantum dots tunnel over to the second well and are then swept out via a lateral (perpendicular to the growth direction) bias voltage. This architecture should exhibit the ability to tune to select infrared frequencies with reduced dark current and unity gain. The lateral photocurrent is directed by a vertical (parallel to the growth direction) gate voltage. We will discuss this detector architecture and the LQDIP operating principles and conditions, and we will present some preliminary results of current-voltage, photocurrent, differential conductance, and spectral measurements.

  1. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Di; Wang, Lai; Lv, Wen-Bin; Hao, Zhi-Biao; Luo, Yi

    2015-06-01

    Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra.

  2. Efficient Luminescence from Perovskite Quantum Dot Solids.

    PubMed

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F; Sargent, Edward H

    2015-11-18

    Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  3. Sensitivity of quantum-dot semiconductor lasers to optical feedback.

    PubMed

    O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V

    2004-05-15

    The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.

  4. InAs/InP/ZnSe Core/Shell/Shell Quantum Dots as Near-Infrared Emitters: Bright, Narrow-Band, Non-Cadmium Containing, and Biocompatible

    PubMed Central

    Xie, Renguo; Chen, Kai; Chen, Xiaoyuan; Peng, Xiaogang

    2010-01-01

    High quality InAs/InP/ZnSe core/shell/shell quantum dots have been grown by a one-pot approach. This engineered quantum dots with unique near-infrared (NIR) fluorescence, possessing outstanding optical properties, and the biocompatibility desired for in vivo applications. The resulting quantum dots have significantly lower intrinsic toxicity compared to NIR emissive dots containing elements such as cadmium, mercury, or lead. Also, these newly developed ultrasmall non-Cd containing and NIR-emitting quantum dots showed significantly improved circulation half-life and minimal reticuloendothelial system (RES) uptake. PMID:20631914

  5. Mitigation of Quantum Dot Cytotoxicity by Microencapsulation

    PubMed Central

    Romoser, Amelia; Ritter, Dustin; Majitha, Ravish; Meissner, Kenith E.; McShane, Michael; Sayes, Christie M.

    2011-01-01

    When CdSe/ZnS-polyethyleneimine (PEI) quantum dots (QDs) are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG) mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the “first line of defense” for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor. PMID:21814567

  6. Quantum Computation Using Optically Coupled Quantum Dot Arrays

    NASA Technical Reports Server (NTRS)

    Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)

    1998-01-01

    A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.

  7. Quantum Computation Using Optically Coupled Quantum Dot Arrays

    NASA Technical Reports Server (NTRS)

    Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)

    1998-01-01

    A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.

  8. Effect of Sb and As spray on emission characteristics of InAs quantum dots with AlAs capping layer

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Tan, S.; Kim, Y.; Liu, Z.; Reece, P. J.; Bremner, S. P.

    2017-10-01

    We report on the influence of an Sb/As combined spray on the physical and optical characteristics of AlAs-capped InAs/GaAs quantum dots grown by Molecular Beam Epitaxy. Photoluminescence emission from the quantum dots shows a significant peak position shift under different Sb/As spray sequences. A blue-shifted quantum dot emission peak with an initial Sb rest indicates a large-to-small quantum dots transition process, with a bi-modal quantum dot size distribution inferred. High-resolution Transmission Electron Microscopy results reveal a large density of small quantum dots when the Sb spray is treated first. Furthermore, defect passivation in the vicinity of the quantum dots by use of Sb spray was detected.

  9. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  10. Entrapment in phospholipid vesicles quenches photoactivity of quantum dots.

    PubMed

    Generalov, Roman; Kavaliauskiene, Simona; Westrøm, Sara; Chen, Wei; Kristensen, Solveig; Juzenas, Petras

    2011-01-01

    Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers.

  11. Entrapment in phospholipid vesicles quenches photoactivity of quantum dots

    PubMed Central

    Generalov, Roman; Kavaliauskiene, Simona; Westrøm, Sara; Chen, Wei; Kristensen, Solveig; Juzenas, Petras

    2011-01-01

    Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers. PMID:21931483

  12. SU(4) Kondo entanglement in double quantum dot devices

    NASA Astrophysics Data System (ADS)

    Bonazzola, Rodrigo; Andrade, J. A.; Facio, Jorge I.; García, D. J.; Cornaglia, Pablo S.

    2017-08-01

    We analyze, from a quantum information theory perspective, the possibility of realizing an SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground-state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson-type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.

  13. Principles of conjugating quantum dots to proteins via carbodiimide chemistry

    NASA Astrophysics Data System (ADS)

    Song, Fayi; Chan, Warren C. W.

    2011-12-01

    The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein-quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

  14. Principles of conjugating quantum dots to proteins via carbodiimide chemistry.

    PubMed

    Song, Fayi; Chan, Warren C W

    2011-12-09

    The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein-quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

  15. Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.

    PubMed

    Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni

    2017-03-22

    We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.

  16. Silicon Quantum Dots for Quantum Information Processing

    DTIC Science & Technology

    2013-11-01

    levels of the dot up and down. This pulse train modulates the sensor current via a cross- capacitance at a frequency fpulse and the resulting current...excited-state energy levels were detected using a SET charge sensor , with the aid of pulsed-voltage spectroscopy. The energy of the first orbital...were studied in detail. The electron occupancy and excited-state energy levels were detected using a SET charge sensor , with the aid of pulsed-voltage

  17. Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

    PubMed

    Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

    2007-06-01

    We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

  18. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    SciTech Connect

    Moldavskaya, L. D. Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-15

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 {mu}m at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 Multiplication-Sign 10{sup 9} cm Hz{sup 1/2}W{sup -1}.

  19. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    SciTech Connect

    Moldavskaya, L. D. Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-15

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 {mu}m at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10{sup 9} cm Hz{sup 1/2}W{sup -1}.

  20. Improving the performance of bright quantum dot single photon sources using temporal filtering via amplitude modulation.

    PubMed

    Ates, Serkan; Agha, Imad; Gulinatti, Angelo; Rech, Ivan; Badolato, Antonio; Srinivasan, Kartik

    2013-01-01

    Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit nonideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of systems based on single solid-state quantum emitters, which often suffer from excess dephasing and multi-photon background emission.

  1. Improving the performance of bright quantum dot single photon sources using temporal filtering via amplitude modulation

    PubMed Central

    Ates, Serkan; Agha, Imad; Gulinatti, Angelo; Rech, Ivan; Badolato, Antonio; Srinivasan, Kartik

    2013-01-01

    Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit nonideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of systems based on single solid-state quantum emitters, which often suffer from excess dephasing and multi-photon background emission. PMID:23466520

  2. Probing relaxation times in graphene quantum dots

    PubMed Central

    Volk, Christian; Neumann, Christoph; Kazarski, Sebastian; Fringes, Stefan; Engels, Stephan; Haupt, Federica; Müller, André; Stampfer, Christoph

    2013-01-01

    Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dots have been extensively investigated with respect to their excitation spectrum, spin-filling sequence and electron-hole crossover. However, their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular concerning the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here we report pulsed-gate transient current spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design that allows to individually tune the tunnelling barriers down to the low megahertz regime, while monitoring their asymmetry. Measuring transient currents through electronic excited states, we estimate a lower bound for charge relaxation times on the order of 60–100 ns. PMID:23612294

  3. Nanoscale optimization of quantum dot solar sells

    NASA Astrophysics Data System (ADS)

    Li, Yanshu; Sergeev, Andrei; Vagidov, Nizami; Mitin, Vladimir; Sablon, Kimberly; State Univ of NY-Buffalo Team; Army Research Laboratory Team

    2015-03-01

    Quantum dots (QDs) offer possibilities for nanoscale control of photoelectron processes via engineering the band structure and potential profile. Nanoscale potential profile (potential barriers) and nanoscale band engineering (AlGaAs atomically thin barriers) effectively suppress the photoelectron capture to QDs. QDs also increase conversion efficiency of the above-bandgap photons due to extraction of electrons from QDs via Coulomb interaction with hot electrons that excited by high-energy photons. To study the effects of the band structure engineering and nanoscale potential barriers on the photovoltaic performance we fabricated 3- μm base GaAs devices with various InAs quantum dot media and selective doping. All quantum dot devices show improvement in conversion efficiency compared with the reference cell. Quantum efficiency measurements allow us to associate the spectral characteristics of photoresponse enhancement with nanoscale structure of QD media. The dark current analysis provides valuable information about recombination in QD solar cells. The two-diode model well fit the scope of data and recovers the measured open circuit voltage.

  4. Theory of the Quantum Dot Hybrid Qubit

    NASA Astrophysics Data System (ADS)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  5. Reduction of Dark Current in Germanium Quantum Dot Infrared Photodetector

    NASA Astrophysics Data System (ADS)

    Ma, Siguang

    2005-03-01

    We present theoretical and experimental studies aimed for the reduction of dark current of self-assembled Ge/Si quantum dot infrared photodetector. P-i-p structures were grown with p-type doped Ge dots embedded in the intrinsic Si region using p^+-type Si (100) substrates. A Si1-xGex thin layer with high Ge content was inserted in the active region and the quantum well formed in the valence band acts as a current barrier layer (CBL). In simulation, the modification of the hole masses due to strain effects was determined by a k.p band structure calculation. Quantum confinement, thermionic emission and scattering process were taken into consideration for carrier transport model in the quantum well region. Simulation study showed that the leakage current can be reduced up to three orders of magnitude. Experiments were carried out to verify the simulation results. The photocurrent to dark current ratio with respect to bias was examined to show the impact of CBL on device performance.

  6. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    SciTech Connect

    Betz, A. C. Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.

    2016-05-16

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  7. Controllable quantum scars in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Keski-Rahkonen, J.; Luukko, P. J. J.; Kaplan, L.; Heller, E. J.; Räsänen, E.

    2017-09-01

    Quantum scars are enhancements of quantum probability density along classical periodic orbits. We study the recently discovered phenomenon of strong perturbation-induced quantum scarring in the two-dimensional harmonic oscillator exposed to a homogeneous magnetic field. We demonstrate that both the geometry and the orientation of the scars are fully controllable with a magnetic field and a focused perturbative potential, respectively. These properties may open a path into an experimental scheme to manipulate electric currents in nanostructures fabricated in a two-dimensional electron gas.

  8. Quantum Optical Signature of Plasmonically Coupled Nanocrystal Quantum Dots.

    PubMed

    Wang, Feng; Karan, Niladri S; Nguyen, Hue Minh; Mangum, Benjamin D; Ghosh, Yagnaseni; Sheehan, Chris J; Hollingsworth, Jennifer A; Htoon, Han

    2015-10-01

    Small clusters of two to three silica-coated nanocrystals coupled to plasmonic gap-bar antennas can exhibit photon antibunching, a characteristic of single quantum emitters. Through a detailed analysis of their photoluminescence emissions characteristics, it is shown that the observed photon antibunching is the evidence of coupled quantum dot formation resulting from the plasmonic enhancement of dipole-dipole interaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. GaAs/InAs quantum dot exciton and trion excitation via nearby plasmonic waveguides

    NASA Astrophysics Data System (ADS)

    Seaton, Matt; Wu, Yanwen; Gammon, Dan; Bracker, Allan; Wu Optics Group Team; NRL Team

    An open area of research in quantum plasmonics is the detailed characterization of the interaction between plasmonic structures and single quantum emitters. We observe the indirect excitation of excitons and trions in MBE grown GaAs/InAs quantum dots embedded in a Schottkey structure by nearby plasmons. The samples, grown on heavily doped N-type GaAs, were coated with a thin Cr layer to provide an electrical gate, through which we observe the photoluminescence spectrum of the different exciton charge states. Through spatially resolved photoluminescence spectroscopy, we verify the QD signature by laser pumping of surface plasmons in Ag thin film plasmonic waveguides near the dots. The waveguides were lithographically defined and embedded in the QD layer of the substrate via wet chemical etching and thermal vapor deposition. The characteristic PL spectra of the dots were collected and observed a large distance away from the excitation point, on the order of ten microns.

  10. Sharp exciton emission from single InAs quantum dots in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Panev, Nikolay; Persson, Ann I.; Sköld, Niklas; Samuelson, Lars

    2003-09-01

    We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski-Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line—the exciton line.

  11. The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states

    SciTech Connect

    Wu, Jiang; Passmore, Brandon; Manasreh, M. O.

    2015-08-28

    InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband and interband optical transitions. The electron filling of self-assembled InAs quantum dots was varied by direct doping of quantum dots with different concentrations. Photoresponse in the near infrared and middle wavelength infrared spectral region was observed from samples with low quantum dot filling. Although undoped quantum dots were favored for interband transitions with the absence of a second optical excitation in the near infrared region, doped quantum dots were preferred to improve intraband transitions in the middle wavelength infrared region. As a result, partial filling of quantum dot was required, to the extent of maintaining a low dark current, to enhance the dual-band photoresponse through the confined electron states.

  12. Assembly of CdS Quantum Dots onto Hierarchical TiO2 Structure for Quantum Dots Sensitized Solar Cell Applications

    PubMed Central

    Ali, Syed Mansoor; Aslam, Mohamed; Farooq, W. A.; Fatehmulla, Amanullah; Atif, M.

    2015-01-01

    Quantum dot (QD) sensitized solar cells based on Hierarchical TiO2 structure (HTS) consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate is fabricated. The hierarchical TiO2 structure consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate synthesized by hydrothermal route. The CdS quantum dots were grown by the successive ionic layer adsorption and reaction deposition method. The quantum dot sensitized solar cell based on the hierarchical TiO2 structure shows a current density JSC = 1.44 mA, VOC = 0.46 V, FF = 0.42 and η = 0.27%. The QD provide a high surface area and nano-urchins offer a highway for fast charge collection and multiple scattering centers within the photoelectrode.

  13. Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

    NASA Astrophysics Data System (ADS)

    Huh, Jae-Hoon; Hermannstädter, Claus; Akahane, Kouichi; Jahan, Nahid A.; Sasaki, Masahide; Suemune, Ikuo

    2012-06-01

    We use high-density InAs quantum dots, which were grown by molecular beam epitaxy on InP(311)B substrates, as photon sources in the telecommunication C band at approximately 1.55 µm. To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. The benefit of using high-density quantum dot samples is that at least one optically active quantum dot can be expected in every single mesa. We show that the etching rate and resulting mesa shape of the In0.53Al0.22Ga0.25As epitaxial layer can be varied with the chamber pressure during the etching process. Furthermore, under constant pressure and with increasing etching time, the sequential etching of the epitaxial layer and the underneath substrate leads to a significant modification in the mesa shape, too. We demonstrate that the isolation of a small number of quantum dots within one mesa results in the appearance of single quantum dot emission with a narrow line width and minimal spectral overlap between different emission lines. We moreover present significant enhancement of the luminescence collected from single dots in silver-embedded nanomesas when compared with as-etched mesas.

  14. Evidence of thermally activated transfer of excited carriers between CdSe/ZnSe quantum dots

    NASA Astrophysics Data System (ADS)

    Zhang, X. B.; Ha, K. L.; Hark, S. K.

    2001-10-01

    Temperature dependent photoluminescence and cathodoluminescence of selfassembled CdSe/ZnSe quantum dots grown by metalorganic vapor phase deposition were investigated. We found an unusual large red shift and a narrowing of the photoluminescence peak with temperature increases. Cathodoluminescence studies of a small number of quantum dots showed that the broad peak observed in the photoluminescence spectra is, in fact, made up of a series of narrower peaks, coming from quantum dots of different sizes. While the intensity of luminescence from small dots drops monotonously with temperature rises, that from the large dots displays a peculiar behavior. It actually increases within the temperature range of 140 170 K, the same range in which the photoluminescence peak shows narrowing. The simultaneous increase of luminescence from some quantum dots and decrease from others are believed to be responsible for the red shift and narrowing of the observed photoluminescence peak. A simple analytically solvable rate equation model was used to understand the spectral data. We suggest that the unusual behaviors observed can be understood as resulting from a transfer of thermally activated carriers from small to large quantum dots.

  15. Stochastic continuum modeling self-assembled epitaxial quantum dot formation

    NASA Astrophysics Data System (ADS)

    Friedman, Lawrence H.

    2008-08-01

    Semiconductor epitaxial self-assembled quantum dots (SAQDs) have potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other optoelectronic devices. SAQDs form during heteroepitaxy of lattice-mismatched films where surface diffusion is driven by an interplay of strain energy and surface energy. Common systems are GexSi1-x/Si and InxGa1-xAs/GaAs. SAQDs are typically grown on a (001) crystal surface. Self-assembled nanostructures form due to both random and deterministic effects. As a consequence, order and controllability of SAQD formation is a technological challenge. Theoretical and numerical models of SAQD formation can contribute both fundamental understanding and become quantitative design tools for improved SAQD fabrication if they can accurately capture the competition between deterministic and random effects. In this research, a stochastic model of SAQD formation is presented. This model adapts previous surface diffusion models to include thermal fluctuations in surface diffusion, randomness in material deposition and the effects of anisotropic elasticity, anisotropic surface energy and anisotropic diffusion, all of which are needed to model average SAQD morphology and order. This model is applied to Ge/Si SAQDs which are group IV semiconductor dots and InAs/GaAs SAQDs which are III-V semiconductor dots.

  16. Thermionic tunneling through Coulomb barriers in charged self-assembled quantum dots

    NASA Astrophysics Data System (ADS)

    Schramm, A.; Schulz, S.; Zander, T.; Heyn, Ch.; Hansen, W.

    2009-10-01

    The temperature and electric-field dependence of the electron emission from charged semiconductor quantum dots is studied with transient capacitance spectroscopy. The self-assembled InAs quantum dots are embedded within Schottky diodes grown with molecular-beam epitaxy on GaAs(001). In accordance with the different activation energies the emission from the s and the p shell of the quantum dots takes place with strongly different rates. In addition, the emission rates depend on the charge state of the shells. The behavior can quantitatively be understood with a thermionic-tunneling model in which the tunnel barrier is assumed to consist of a Coulomb barrier arising from the charge within the dot and a triangular contribution from remote charges.

  17. Optical resonators and quantum dots: An excursion into quantum optics, quantum information and photonics

    NASA Astrophysics Data System (ADS)

    Bianucci, Pablo

    Modern communications technology has encouraged an intimate connection between Semiconductor Physics and Optics, and this connection shows best in the combination of electron-confining structures with light-confining structures. Semiconductor quantum dots are systems engineered to trap electrons in a mesoscopic scale (the are composed of ≈ 10000 atoms), resulting in a behavior resembling that of atoms, but much richer. Optical microresonators are engineered to confine light, increasing its intensity and enabling a much stronger interaction with matter. Their combination opens a myriad of new directions, both in fundamental Physics and in possible applications. This dissertation explores both semiconductor quantum dots and microresonators, through experimental work done with semiconductor quantum dots and microsphere resonators spanning the fields of Quantum Optics, Quantum Information and Photonics; from quantum algorithms to polarization converters. Quantum Optics leads the way, allowing us to understand how to manipulate and measure quantum dots with light and to elucidate the interactions between them and microresonators. In the Quantum Information area, we present a detailed study of the feasibility of excitons in quantum dots to perform quantum computations, including an experimental demonstration of the single-qubit Deutsch-Jozsa algorithm performedin a single semiconductor quantum dot. Our studies in Photonics involve applications of microsphere resonators, which we have learned to fabricate and characterize. We present an elaborate description of the experimental techniques needed to study microspheres, including studies and proof of concept experiments on both ultra-sensitive microsphere sensors and whispering gallery mode polarization converters.

  18. Spin thermopower in interacting quantum dots

    NASA Astrophysics Data System (ADS)

    Rejec, Tomaž; Žitko, Rok; Mravlje, Jernej; Ramšak, Anton

    2012-02-01

    Using analytical arguments and the numerical renormalization group method, we investigate the spin thermopower of a quantum dot in a magnetic field. In the particle-hole-symmetric situation, the temperature difference applied across the dot drives a pure spin current without accompanying charge current. For temperatures and fields at or above the Kondo temperature, but of the same order of magnitude, the spin-Seebeck coefficient is large, of the order of kB/|e|. Via a mapping, we relate the spin-Seebeck coefficient to the charge-Seebeck coefficient of a negative-U quantum dot where the corresponding result was recently reported by Andergassen [Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.84.241107 84, 241107 (2011)]. For several regimes, we provide simplified analytical expressions. In the Kondo regime, the dependence of the spin-Seebeck coefficient on the temperature and the magnetic field is explained in terms of the shift of the Kondo resonance due to the field and its broadening with the temperature and the field. We also consider the influence of breaking the particle-hole symmetry and show that a pure spin current can still be realized, provided a suitable electric voltage is applied across the dot. Then, except for large asymmetries, the behavior of the spin-Seebeck coefficient remains similar to that found in the particle-hole-symmetric point.

  19. Planar Dirac electrons in magnetic quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Ning; Zhu, Jia-Lin

    2012-05-01

    In this paper, we explore the size- and mass-dependent energy spectra and the electronic correlation of two- and three-electron graphene magnetic quantum dots. It is found that only the magnetic dots with large size can well confine the electrons. For large graphene magnetic dots with massless (ultra-relativity) electrons, the energy level structures of two Dirac electrons and even the ground state spin and angular momentum of three electrons are quite different from those of the usual semiconductor quantum dots. Also we reveal that such differences are not due to the magnetic confinement but originate from the character of the Coulomb interaction of two-component electronic wavefunctions in graphene. We reveal that the increase of the mass leads to both the crossover of the energy spectrum structures from the ultra-relativity to non-relativity ones and the increasing of the crystallization. The results are helpful for the understanding of the mass and size effects and may be useful in controlling the few-electron states in graphene-based nanodevices.

  20. Separability and dynamical symmetry of Quantum Dots

    SciTech Connect

    Zhang, P.-M.; Zou, L.-P.; Horvathy, P.A.; Gibbons, G.W.

    2014-02-15

    The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.

  1. Optically injected quantum-dot lasers.

    PubMed

    Erneux, T; Viktorov, E A; Kelleher, B; Goulding, D; Hegarty, S P; Huyet, G

    2010-04-01

    The response of an optically injected quantum-dot semiconductor laser (SL) is studied both experimentally and theoretically. In particular, the nature of the locking boundaries is investigated, revealing features more commonly associated with Class A lasers rather than conventional Class B SLs. Experimentally, two features stand out; the first is an absence of instabilities resulting from relaxation oscillations, and the second is the observation of a region of bistability between two locked solutions. Using rate equations appropriate for quantum-dot lasers, we analytically determine the stability diagram in terms of the injection rate and frequency detuning. Of particular interest are the Hopf and saddle-node locking boundaries that explain how the experimentally observed phenomena appear.

  2. Quantum Dot Detector Enhancement for Narrow Band Multispectral Applications

    DTIC Science & Technology

    2013-12-01

    Report contains color. 14. ABSTRACT The underlying principle of a photodetector is converting the optical signal into electrical signal. Under...enhancement of quantum dot photodetectors was also investigated. 15. SUBJECT TERMS quantum dot, quantum well, photodetectors , plasmonics 16...1.0 Introduction – Photodetectors .............................................................................................. 1 1.1 Types of

  3. Synthesis of Cesium Lead Halide Perovskite Quantum Dots

    ERIC Educational Resources Information Center

    Shekhirev, Mikhail; Goza, John; Teeter, Jacob D.; Lipatov, Alexey; Sinitskii, Alexander

    Synthesis of quantum dots is a valuable experiment for demonstration and discussion of quantum phenomena in undergraduate chemistry curricula. Recently, a new class of all-inorganic perovskite quantum dots (QDs) with a formula of CsPbX[subscript 3] (X = Cl, Br, I) was presented and attracted tremendous attention. Here we adapt the synthesis of…

  4. Mid-Infrared Photoconductivity in Self-Assembled InAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Berryman, K. W.; Lyon, S. A.; Segev, Mordechai

    1997-03-01

    Observations of mid-infrared photoconductivity in self-assembled InAs quantum dots are observed. The dots, which self-assemble into squat pyramidal shapes approximately 10 nm on a side and 2-3 nm high, are grown using standard molecular beam epitaxy techniques and coherently strained in a matrix of Al_0.3Ga_0.7As which has been grown on a GaAs substrate. Using a variety of cladding structures and dots doped with electrons, normal incidence photoconductivity has been measured at a range of wavelengths in the mid-infrared. Observations at different sample temperatures and applied bias allows discrimination and explanation of different tranistion processes, including excitation of carriers from the ground state of the dots into both excited states and the continuum. Photoluminescence and electroluminescence experiments are in good agreement with the observed optical transitions. The large optical response of these quantum dot samples suggests possible future use as novel mid-infrared detectors. Infrared photoconductivity is investigated for several different dot structures, and the possibility of further optimization of self-assembled quantum dots for both mid-infrared detection and emission will be discussed.

  5. Fabrication of nanoscale heterostructures comprised of graphene-encapsulated gold nanoparticles and semiconducting quantum dots for photocatalysis.

    PubMed

    Li, Yuan; Chopra, Nitin

    2015-05-21

    Patterned growth of multilayer graphene shell encapsulated gold nanoparticles (GNPs) and their covalent linking with inorganic quantum dots are demonstrated. GNPs were grown using a xylene chemical vapor deposition process, where the surface oxidized gold nanoparticles catalyze the multilayer graphene shell growth in a single step process. The graphene shell encapsulating gold nanoparticles could be further functionalized with carboxylic groups, which were covalently linked to amine-terminated quantum dots resulting in GNP-quantum dot heterostructures. The compositions, morphologies, crystallinity, and surface functionalization of GNPs and their heterostructures with quantum dots were evaluated using microscopic, spectroscopic, and analytical methods. Furthermore, optical properties of the derived architectures were studied using both experimental methods and simulations. Finally, GNP-quantum dot heterostructures were studied for photocatalytic degradation of phenol.

  6. Deposition of Quantum Dots in a Capillary Tube.

    PubMed

    Kong, Yong Lin; Boulogne, François; Kim, Hyoungsoo; Nunes, Janine; Feng, Jie; Stone, Howard A

    2015-11-17

    The ability to assemble nanomaterials, such as quantum dots, enables the creation of functional devices that present unique optical and electronic properties. For instance, light-emitting diodes with exceptional color purity can be printed via the evaporative-driven assembly of quantum dots. Nevertheless, current studies of the colloidal deposition of quantum dots have been limited to the surfaces of a planar substrate. Here, we investigate the evaporation-driven assembly of quantum dots inside a confined cylindrical geometry. Specifically, we observe distinct deposition patterns, such as banding structures along the length of a capillary tube. Such coating behavior can be influenced by the evaporation speed as well as the concentration of quantum dots. Understanding the factors governing the coating process can provide a means to control the assembly of quantum dots inside a capillary tube, ultimately enabling the creation of novel photonic devices.

  7. Barrier Engineered Quantum Dot Infrared Photodetectors

    DTIC Science & Technology

    2015-06-01

    REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL -RV-PS-TR-2015-0111 12. DISTRIBUTION / AVAILABILITY STATEMENT Approved for Public Release; Distribution... Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSS/David Cardimona 1 cy ... AFRL -RV-PS- AFRL -RV-PS- TR-2015-0111 TR-2015-0111 BARRIER ENGINEERED QUANTUM DOT INFRARED PHOTODETECTORS Sanjay Krishna Center for High Technology

  8. Multifunctional magnetic quantum dots for cancer theranostics.

    PubMed

    Singh, Surinder P

    2011-02-01

    The development of an innovative platform for cancer theranostics that will be capable of noninvasive imaging and treatment of cancerous tumors using biocompatible and multifunctional Fe3O4-ZnO core-shell magnetic quantum dots (M-QDs) is being explored. This multi-functional approach will facilitate deep tumor targeting using a combination of a specific cancer marker and an external magnetic field will simultaneously provide therapy that may evolve as a new paradigm in cancer theranostics.

  9. Intrinsic spin dynamics in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Valín-Rodríguez, Manuel

    2005-12-01

    We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an 8 × 8 k·p Hamiltonian we treat systems based on different III-V semiconductor materials. It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from THz to optical frequencies.

  10. Carbon Nanotube Quantum Dots as THz Detectors

    DTIC Science & Technology

    2012-12-14

    devices that are viable for wafer -scale production. We recently started testing fabrication processes using epitaxial graphene on SiC in collaboration... laser sources at four different Fig. 4 Top: Drain current versus the gate voltage for different THz field intensities. Bottom: Temperature dependence...research. The first was the small coupling between the quantum dot and the powerful (10 mW) laser source. The second was the difficulty to reproduce the

  11. Direct Bandgap Quantum Dots Embedded in a Type-II GaAs/AlAs Double Quantum Well Structure

    NASA Astrophysics Data System (ADS)

    Chwalisz-PiȨTKA, Barbara; Wysmołek, Andrzej; StȨPNIEWSKI, Roman; Potemski, Marek; Raymond, Sylvain; Bożek, Rafał; Thierry-Mieg, Veronique

    Quantum dots with strong three dimensional confinement and low surface density have been identified in a structure which was nominally grown as a type-II GaAs/AlAs bilayer surrounded by GaAlAs barriers. Micro-luminescence experiments in magnetic fields performed on these dots display excitonic spin-splitting and orbital Zeeman effects for the excited states. The modification by the magnetic field of the diffusion and/or trapping of photoexcited carriers into the dots is also observed.

  12. Relaxation dynamics in correlated quantum dots

    SciTech Connect

    Andergassen, S.; Schuricht, D.; Pletyukhov, M.; Schoeller, H.

    2014-12-04

    We study quantum many-body effects on the real-time evolution of the current through quantum dots. By using a non-equilibrium renormalization group approach, we provide analytic results for the relaxation dynamics into the stationary state and identify the microscopic cutoff scales that determine the transport rates. We find rich non-equilibrium physics induced by the interplay of the different energy scales. While the short-time limit is governed by universal dynamics, the long-time behavior features characteristic oscillations as well as an interplay of exponential and power-law decay.

  13. Single molecule study of silicon quantum dots

    NASA Astrophysics Data System (ADS)

    So, Woong Young; Li, Qi; Jin, Rongchao; Peteanu, Linda

    2016-09-01

    Recently, fluorescent Silicon (Si) Quantum Dots (QDs) have attracted much interest due to their high quantum yield, use of non-toxic and environmentally-benign chemicals, and water-solubility. However, more research is necessary to understand the energy level characteristics and single molecule behavior to enable their development for imaging applications. Therefore, single molecule time-resolved fluorescence spectroscopy of fluorescent Si QDs (cyan, green, and yellow) is needed. A rigorous analysis of time-resolved photon correlation spectroscopy and fluorescence lifetime data on single Si QDs at room temperature is presented.

  14. Si, Ge, and SiGe quantum wires and quantum dots

    NASA Astrophysics Data System (ADS)

    Pearsall, T. P.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses Si, Ge, and SiGe quantum wire and quantum dot structures, the synthesis of quantum wires and quantum dots, and applications of SiGe quantum-dot structures as photodetectors, light-emitting diodes, for optical amplification and as Si quantum-dot memories.

  15. Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

    SciTech Connect

    Michael, Stephan; Chow, Weng; Schneider, Hans

    2016-05-01

    In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.

  16. Near-field magnetoabsorption of quantum dots

    NASA Astrophysics Data System (ADS)

    Simserides, Constantinos; Zora, Anna; Triberis, Georgios

    2006-04-01

    We investigate the effect of an external magnetic field of variable orientation and magnitude (up to 20T ) on the linear near-field optical absorption spectra of single and coupled III-V semiconductor quantum dots. We focus on the spatial as well as on the magnetic confinement, varying the dimensions of the quantum dots and the magnetic field. We show that the ground-state exciton binding energy can be manipulated utilizing the spatial and magnetic confinement. The effect of the magnetic field on the absorption spectra, increasing the near-field illumination spot, is also investigated. The zero-magnetic-field “structural” symmetry can be destroyed varying the magnetic field orientation and this affects the near-field spectra. The asymmetry induced (except for specific orientations along symmetry axes) by the magnetic field can be revealed in the near-field but not in the far-field spectra. We predict that near-field magnetoabsorption experiments, of realistic spatial resolution, will be in the position to bring to light the quantum dot symmetry. This exceptional symmetry-resolving power of the near-field magnetoabsorption is lost in the far field. The influence of the Coulomb interactions on the absorption spectra is also discussed. Finally, we show that certain modifications of the magnetoexcitonic structure can be uncovered using a realistically acute near-field probe of ≈20nm .

  17. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  18. The structural parameters of self-assembled quantum dots determined from the optical spectra

    NASA Astrophysics Data System (ADS)

    Hong, Boon Hon; Tinkler, Lloyd; Beaumont, Matthew; Rybchenko, Sergey I.; Itskevich, Igor E.; Haywood, Stephanie K.; Hugues, Maxime

    2013-12-01

    Structural parameters of InGaAs/GaAs self-assembled quantum dots (SAQDs), which were grown using In-flush technique, were deduced using optical spectroscopy combined with computer modeling. The results are in excellent agreement with the experimental data obtained from transmission electron microscopy. The developed approach suggests a promising alternative to structural characterization methods for SAQDs.

  19. Biexciton in nanosystem of quantum dots of cadmium sulfide in a dielectric matrix

    NASA Astrophysics Data System (ADS)

    Pokutnii, S. I.

    2016-11-01

    A significant increase in the binding energy of the singlet ground state of biexciton (of spatially separated electrons and holes) in a nanosystem that consists of CdS quantum dots grown in a borosilicate glass matrix has been predicted; the effect is almost two orders of magnitude larger than the binding energy of biexciton in a sulfide cadmium single crystal.

  20. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  1. The structural parameters of self-assembled quantum dots determined from the optical spectra

    SciTech Connect

    Hong, Boon Hon; Beaumont, Matthew; Rybchenko, Sergey I.; Itskevich, Igor E.; Haywood, Stephanie K.; Tinkler, Lloyd; Hugues, Maxime

    2013-12-04

    Structural parameters of InGaAs/GaAs self-assembled quantum dots (SAQDs), which were grown using In-flush technique, were deduced using optical spectroscopy combined with computer modeling. The results are in excellent agreement with the experimental data obtained from transmission electron microscopy. The developed approach suggests a promising alternative to structural characterization methods for SAQDs.

  2. Shielding of quantum dots using diblock copolymers: implementing copper catalyzed click chemistry to fluorescent quantum dots

    NASA Astrophysics Data System (ADS)

    Merkl, Jan-Philip; Ostermann, Johannes; Schmidtke, Christian; Kloust, Hauke; Eggers, Robin; Feld, Artur; Wolter, Christopher; Kreuziger, Anna-Marlena; Flessau, Sandra; Mattoussi, Hedi; Weller, Horst

    2014-03-01

    We describe the design and optimization of an amphiphilic diblock copolymer and its use to provide surface functionalization of colloidal semiconductor nanoparticles (quantum dots, QDs). This polymer coating promotes hydrophilicity of the nanocrystals while providing numerous functional groups ideally suited for biofunctionalization of the QDs using copper-catalyzed azide alkyne Husigen 1,3-cyloaddition (i.e., cupper catalyzed "click" reaction). Copper ions are known to quench the fluorescence of QDs in solution. Thus effective shielding of the nanocrystal surface is essential to apply copper-catalyzed reactions to luminescent QDs without drastically quenching their emission. We have applied a strategy based on micellar encapsulation within poly(isoprene-block- ethylene oxide) diblock-copolymers (PI-b-PEO), where three critical factors promote and control the effectiveness of the shielding of copper ion penetration: 1) The excess of PI-b-PEO, 2) the size of PI-b-PEO and 3) insertion of an additional PS-shell grown via seeded emulsion polymerization (EP) reaction. Due to the amphiphilic character of the block-copolymer, this approach provides a shielding layer surrounding the particles, preventing metal ions from reaching the QD surfaces and maintaining high photoluminescence. The effective shielding allowed the use of copper-catalyzed azide-alkyne 1,3-cycloaddition (CuAAC) to hydrophilic and highly fluorescent QDs, opening up great possibilities for the bio functionalization of QDs.

  3. Semiconductor quantum dot scintillation under gamma-ray irradiation.

    PubMed

    Létant, S E; Wang, T-F

    2006-12-01

    We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma irradiation and compare the energy resolution of the 59 keV line of americium-241 obtained with our quantum dot-glass nanocomposite to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon-transport models.

  4. Nanocarbons and quantum dots formation in new hybrid materials

    NASA Astrophysics Data System (ADS)

    Bogdanov, Kirill V.; Gromova, Yulia A.; Ermakov, Victor A.; Alaferdov, Andrei V.; Orlova, Anna O.; Moshkalev, Stanislav A.; Fedorov, Anatoly V.; Baranov, Alexander V.

    2014-05-01

    We present technique of obtaining complex hybrid structures combining the multi-walled carbon nanotubes or multi-layer graphene and luminescent hydrophobic semiconductor core/shell quantum dots CdSe/ZnS. As a result, a formation of quantum dot decorated carbon nanotubes and graphene films is evidenced by 2D microluminescence and micro-Raman mapping of quantum dots and nanocarbons, respectively, where a spatial correlation between the luminescence and Raman signals is found.

  5. UV Nano-Lights: Nonlinear Quantum Dot-Plasmon Coupling

    DTIC Science & Technology

    2014-08-01

    Final 3. DATES COVERED (From - To) 11-Mar-2013 to 10-Mar-2014 4. TITLE AND SUBTITLE UV Nano-Lights: Nonlinear Quantum Dot- Plasmon ...Nonlinear Quantum Dot- Plasmon Coupling 5a. CONTRACT NUMBER FA2386-13-1-4016 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Eric...nonlinear emission from Quantum Dots through Plasmon Coupling PERIOD OF PERFORMANCE 11 March 2013 - 11 March 2014 RECIPIENT PRINCIPAL

  6. Molecular Profiling of Prostate Cancer Specimens Using Multicolor Quantum Dots

    DTIC Science & Technology

    2009-02-01

    0117 TITLE: Molecular profiling of prostate cancer specimens using Multicolor Quantum Dots PRINCIPAL INVESTIGATOR: Xiaohu Gao...profiling of prostate cancer specimens using Multicolor Quantum Dots 5a. CONTRACT NUMBER W81XWH-07-1-0117 5b. GRANT NUMBER PC061345 5c...based on the biology of their tumors. We proposed to develop oligonucleotide tagged quantum dots and antibodies for multiplexed imaging of prostate

  7. Quantum interface between light and nuclear spins in quantum dots

    NASA Astrophysics Data System (ADS)

    Schwager, Heike; Cirac, J. Ignacio; Giedke, Géza

    2010-01-01

    The coherent coupling of flying photonic qubits to stationary matter-based qubits is an essential building block for quantum-communication networks. We show how such a quantum interface can be realized between a traveling-wave optical field and the polarized nuclear spins in a singly charged quantum dot strongly coupled to a high-finesse optical cavity. By adiabatically eliminating the electron a direct effective coupling is achieved. Depending on the laser field applied, interactions that enable either write-in or read-out are obtained.

  8. Quantum transport through an array of quantum dots.

    PubMed

    Chen, Shuguang; Xie, Hang; Zhang, Yu; Cui, Xiaodong; Chen, Guanhua

    2013-01-07

    The transient current through an array of as many as 1000 quantum dots is simulated with two newly developed quantum mechanical methods. To our surprise, upon switching on the bias voltage, the current increases linearly with time before reaching its steady state value. And the time required for the current to reach its steady state value is proportional to the length of the array, and more interestingly, is exactly the time for a conducting electron to travel through the array at the Fermi velocity. These quantum phenomena can be understood by a simple analysis on the energetics of an equivalent classical circuit. An experimental design is proposed to confirm the numerical findings.

  9. Quantum transport through an array of quantum dots

    NASA Astrophysics Data System (ADS)

    Chen, Shuguang; Xie, Hang; Zhang, Yu; Cui, Xiaodong; Chen, Guanhua

    2012-12-01

    The transient current through an array of as many as 1000 quantum dots is simulated with two newly developed quantum mechanical methods. To our surprise, upon switching on the bias voltage, the current increases linearly with time before reaching its steady state value. And the time required for the current to reach its steady state value is proportional to the length of the array, and more interestingly, is exactly the time for a conducting electron to travel through the array at the Fermi velocity. These quantum phenomena can be understood by a simple analysis on the energetics of an equivalent classical circuit. An experimental design is proposed to confirm the numerical findings.

  10. Tuning the quantum critical crossover in quantum dots

    NASA Astrophysics Data System (ADS)

    Murthy, Ganpathy

    2005-03-01

    Quantum dots with large Thouless number g embody a regime where both disorder and interactions can be treated nonperturbatively using large-N techniques (with N=g) and quantum phase transitions can be studied. Here we focus on dots where the noninteracting Hamiltonian is drawn from a crossover ensemble between two symmetry classes, where the crossover parameter introduces a new, tunable energy scale independent of and much smaller than the Thouless energy. We show that the quantum critical regime, dominated by collective critical fluctuations, can be accessed at the new energy scale. The nonperturbative physics of this regime can only be described by the large-N approach, as we illustrate with two experimentally relevant examples. G. Murthy, PRB 70, 153304 (2004). G. Murthy, R. Shankar, D. Herman, and H. Mathur, PRB 69, 075321 (2004)

  11. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    SciTech Connect

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-08-03

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.

  12. Terahertz transmission through rings of quantum dots-nanogap

    NASA Astrophysics Data System (ADS)

    Tripathi, Laxmi-Narayan; Bahk, Young-Mi; Choi, Geunchang; Han, Sanghoon; Park, Namkyoo; Kim, Dai-Sik

    2016-03-01

    We report resonant funneling of terahertz (THz) waves through (9 ± 1) nm wide quantum dots-nanogap of cadmium selenide quantum dots silver nanogap metamaterials. We observed a giant THz intensity enhancement (∼104) through the quantum dots-nanogap at the resonant frequency. We, further report the experimentally measured effective mode indices for these metamaterials. A finite difference time domain simulation of the nanogap enabled by the quantum dots supports the experimentally measured THz intensity enhancement across the nanogap. We propose that these low effective mode index terahertz resonators will be useful as bio/chemical sensors, gain-enhanced antennas, and wave guides.

  13. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    NASA Astrophysics Data System (ADS)

    See, Gloria G.; Xu, Lu; Sutanto, Erick; Alleyne, Andrew G.; Nuzzo, Ralph G.; Cunningham, Brian T.

    2015-08-01

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.

  14. Correlated electrons in coupled quantum dots and related phenomena

    NASA Astrophysics Data System (ADS)

    Ugajin, Ryuichi

    1998-01-01

    Three topics related to correlated electrons in coupled quantum dots are discussed. The first is quasi-resonance between multi-electron states, which causes hitherto unremarked types of resonant absorption in coupled quantum dots. The second is electron tunneling through a Hubbard gap, which is induced by an increase in the density of electrons in a quantum-dot chain under an overall confining potential. The third is Mott transition in a two-dimensional quantum-dot array induced by an external electric field. In this system, the metal-insulator transition goes through a heavy electron phase in which the density of correlated electrons fluctuates.

  15. Tolerance of Intrinsic Defects in PbS Quantum Dots.

    PubMed

    Zherebetskyy, Danylo; Zhang, Yingjie; Salmeron, Miquel; Wang, Lin-Wang

    2015-12-03

    Colloidal quantum dots exhibit various defects and deviations from ideal structures due to kinetic processes, although their band gap frequently remains open and clean. In this Letter, we computationally investigate intrinsic defects in a real-size PbS quantum dot passivated with realistic Cl-ligands. We show that the colloidal intrinsic defects are ionic in nature. Unlike previous computational results, we find that even nonideal, atomically nonstoichiometric quantum dots have a clean band gap without in-gap-states provided that quantum dots satisfy electronic stoichiometry.

  16. Realizing Rec. 2020 color gamut with quantum dot displays.

    PubMed

    Zhu, Ruidong; Luo, Zhenyue; Chen, Haiwei; Dong, Yajie; Wu, Shin-Tson

    2015-09-07

    We analyze how to realize Rec. 2020 wide color gamut with quantum dots. For photoluminescence, our simulation indicates that we are able to achieve over 97% of the Rec. 2020 standard with quantum dots by optimizing the emission spectra and redesigning the color filters. For electroluminescence, by optimizing the emission spectra of quantum dots is adequate to render over 97% of the Rec. 2020 standard. We also analyze the efficiency and angular performance of these devices, and then compare results with LCDs using green and red phosphors-based LED backlight. Our results indicate that quantum dot display is an outstanding candidate for achieving wide color gamut and high optical efficiency.

  17. Single-electron Spin Resonance in a Quadruple Quantum Dot.

    PubMed

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo

    2016-08-23

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

  18. Silicon quantum dots: fine-tuning to maturity.

    PubMed

    Morello, Andrea

    2015-12-18

    Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.

  19. Single-electron Spin Resonance in a Quadruple Quantum Dot

    NASA Astrophysics Data System (ADS)

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2016-08-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

  20. Single-electron Spin Resonance in a Quadruple Quantum Dot

    PubMed Central

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2016-01-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible. PMID:27550534

  1. Advanced Architecture for Colloidal PbS Quantum Dot Solar Cells Exploiting a CdSe Quantum Dot Buffer Layer.

    PubMed

    Zhao, Tianshuo; Goodwin, Earl D; Guo, Jiacen; Wang, Han; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2016-09-22

    Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.

  2. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  3. Nanoscale patterning of colloidal quantum dots for surface plasmon generation

    NASA Astrophysics Data System (ADS)

    Park, Yeonsang; Roh, Young-Geun; Kim, Un Jeong; Chung, Dae-Young; Suh, Hwansoo; Kim, Jineun; Cheon, Sangmo; Lee, Jaesoong; Kim, Tae-Ho; Cho, Kyung-Sang; Lee, Chang-Won

    2013-03-01

    The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing, and microcontact printing of quantum dots, have limits in fabrication resolution, positioning and the variation of structural shapes. Herein, we present an adaptation of a conventional liftoff method for patterning colloidal quantum dots. This simple method is easy and requires no complicated processes. Using this method, we formed straight lines, rings, and dot patterns of colloidal quantum dots on metallic substrates. Notably, patterned lines approximately 10 nm wide were fabricated. The patterned structures display high resolution, accurate positioning, and well-defined sidewall profiles. To demonstrate the applicability of our method, we present a surface plasmon generator elaborated from quantum dots.

  4. Quantum-Dot-Based Telecommunication-Wavelength Quantum Relay

    NASA Astrophysics Data System (ADS)

    Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Felle, M.; Farrer, I.; Ritchie, D. A.; Penty, R. V.

    2017-08-01

    The development of quantum relays for long-haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon emission for most practical implementations. Using a semiconductor quantum dot emitting entangled photon pairs in the telecommunication O band, we demonstrate a quantum relay fulfilling both of these conditions. The system achieves a maximum fidelity of 94.5% for implementation of a standard four-state protocol with input states generated by a laser. We further investigate robustness against frequency detuning of the narrow-band input and perform process tomography of the teleporter, revealing operation for arbitrary pure input states, with an average gate fidelity of 83.6%. The results highlight the potential of semiconductor light sources for compact and robust quantum-relay technology that is compatible with existing communication infrastructures.

  5. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-09-15

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180 Degree-Sign C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400-760 Degree-Sign C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600 Degree-Sign C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures.

  6. Growth and characterization of InAs quantum dots on Si(0 0 1) substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Z. M.; Hul'ko, O.; Kim, H. J.; Liu, J.; Sugahari, T.; Shi, B.; Xie, Y. H.

    2004-11-01

    Self-assembled InAs quantum dots were grown on (0 0 1) orientated Si substrates by molecular beam epitaxy. Growth condition dependence of dot formation was studied. The evolution of size and shape of quantum dots with InAs coverage was examined using plan-view and cross-section transmission electron microscopy. Dot formation started at below 1 monolayer (ML) of InAs coverage, indicating Volmer-Weber growth mode. Dot size and density grew with increasing InAs coverage up to 0.7 ML. Dot density was observed to be strongly dependent on arsenic (As) beam equivalent pressure (BEP). A decrease of As BEP from 9.2×10 -6 to 1.2×10 -7 torr resulted in an increase in dot density from 4.3×10 9 to 1.8×10 11 cm -2 at a constant InAs coverage of 0.7 ML. Further increase in InAs coverage led to a clear broadening of dot size distribution and a slight decrease in dot density, presumably due to coarsening.

  7. Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David

    2007-01-01

    wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

  8. Optical Properties of Zinc Oxide Quantum Dots

    NASA Astrophysics Data System (ADS)

    Hsieh, Wen-Feng; Hsu, Hsu-Cheng; Liao, Wan-Jiun; Cheng, Hsin-Ming; Lin, Kuo-Feng; Hsu, Wei-Tze; Pan, Chin-Jiu

    Size-dependence of efficient UV photoluminescence (PL) and absorption spectra of various sizes of zinc oxide (ZnO) quantum dots (QDs) give evidence for the quantum confinement effect. Bandgap enlargement is in agreement with the theoretical calculation based on the effective mass model for the size of ZnO QDs being comparable to the Bohr radius of bulk exciton. By using the modified spatial correlation model to fit the measured Raman spectra, we reveal that the Raman spectral shift and asymmetry for E2(high) mode are caused by localization of optical phonons. Furthermore, we present temperature-dependent PL of different sizes of ZnO particles. The unobvious LO-phonon replicas of free exciton (FX) were observed when the ZnO particle sizes were under 12 nm in diameter. The increasing exciton energy (Eb) with the decreasing quantum dot size can be obtained from temperature-dependent PL. From the temperature-dependent change of FX emission energy, we deduce that the exciton-LO phonon coupling strength reduces as the particle size decreases. The reduced exciton Bohr radius aB with particle size obtained from Eb and PL spectrum confirms that the exciton becomes less polar in turn reducing the Fröhlich interaction and the exciton-LO phonon interaction is reduced with decreasing size of the ZnO QDs. In addition, the nearly unchanged spectral shape in power dependent PL of ZnO quantum dots reveals stable exciton states without formation of biexcitons and exciton-exciton cattering.

  9. Hybrid passivated colloidal quantum dot solids

    NASA Astrophysics Data System (ADS)

    Ip, Alexander H.; Thon, Susanna M.; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H.

    2012-09-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.

  10. Hybrid passivated colloidal quantum dot solids.

    PubMed

    Ip, Alexander H; Thon, Susanna M; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R; Carey, Graham H; Fischer, Armin; Kemp, Kyle W; Kramer, Illan J; Ning, Zhijun; Labelle, André J; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H

    2012-09-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.

  11. Thermoelectrics with Coulomb-coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Thierschmann, Holger; Sánchez, Rafael; Sothmann, Björn; Buhmann, Hartmut; Molenkamp, Laurens W.

    2016-12-01

    In this article we review the thermoelectric properties of three terminal devices with Coulomb-coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs, one of which can exchange electrons with only a single reservoir (heat reservoir), while the other dot is tunnel coupled with two reservoirs at a lower temperature (conductor). The heat reservoir and the conductor interact only via the Coulomb coupling of the quantum dots. It has been found that two regimes have to be considered. In the first one, the heat flow between the two systems is small. In this regime, thermally driven occupation fluctuations of the hot QD modify the transport properties of the conductor system. This leads to an effect called thermal gating. Experiments have shown how this can be used to control charge flow in the conductor by means of temperature in a remote reservoir. We further substantiate the observations with model calculations, and implications for the realisation of an all-thermal transistor are discussed. In the second regime, the heat flow between the two systems is relevant. Here the system works as a nanoscale heat engine, as proposed recently (Sánchez and Büttiker [3]). We review the conceptual idea, its experimental realisation and the novel features arising in this new kind of thermoelectric device such as decoupling of heat and charge flow.

  12. Adiabatic Spin Pumping with Quantum Dots

    NASA Astrophysics Data System (ADS)

    Mucciolo, Eduardo R.

    Electronic transport in mesoscopic systems has been intensively studied for more the last three decades. While there is a substantial understanding of the stationary regime, much less is know about phase-coherent nonequilibrium transport when pulses or ac perturbations are used to drive electrons at low temperatures and at small length scales. However, about 20 years ago Thouless proposed to drive nondissipative currents in quantum systems by applying simultaneously two phase-locked external perturbations. The so-called adiabatic pumping mechanism has been revived in the last few years, both theoretically and experimentally, in part because of the development of lateral semiconductor quantum dots. Here we will explain how open dots can be used to create spin-polarized currents with little or no net charge transfer. The pure spin pump we propose is the analog of a charge battery in conventional electronics and may provide a needed circuit element for spin-based electronics. We will also discuss other relevant issues such as rectification and decoherence and point out possible extensions of the mechanism to closed dots.

  13. Nonrenewal statistics in transport through quantum dots

    NASA Astrophysics Data System (ADS)

    Ptaszyński, Krzysztof

    2017-01-01

    The distribution of waiting times between successive tunneling events is an already established method to characterize current fluctuations in mesoscopic systems. Here, I investigate mechanisms generating correlations between subsequent waiting times in two model systems, a pair of capacitively coupled quantum dots and a single-level dot attached to spin-polarized leads. Waiting time correlations are shown to give insight into the internal dynamics of the system; for example they allow distinction between different mechanisms of the noise enhancement. Moreover, the presence of correlations breaks the validity of the renewal theory. This increases the number of independent cumulants of current fluctuation statistics, thus providing additional sources of information about the transport mechanism. I also propose a method for inferring the presence of waiting time correlations based on low-order current correlation functions. This method gives a way to extend the analysis of nonrenewal current fluctuations to the systems for which single-electron counting is not experimentally feasible. The experimental relevance of the findings is also discussed; for example reanalysis of previous results concerning transport in quantum dots is suggested.

  14. Amphoteric CdSe nanocrystalline quantum dots.

    PubMed

    Islam, Mohammad A

    2008-06-25

    The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.

  15. Quantum Dots: An Experiment for Physical or Materials Chemistry

    ERIC Educational Resources Information Center

    Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.

    2005-01-01

    An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.

  16. Quantum Dots: An Experiment for Physical or Materials Chemistry

    ERIC Educational Resources Information Center

    Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.

    2005-01-01

    An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.

  17. Non-Markovian coherent feedback control of quantum dot systems

    NASA Astrophysics Data System (ADS)

    Xue, Shibei; Wu, Rebing; Hush, Michael R.; Tarn, Tzyh-Jong

    2017-03-01

    In this paper we present a non-Markovian coherent feedback scheme for decoherence suppression in single quantum dot systems. The feedback loop is closed via a quantum tunnelling junction between the natural source and drain baths of the quantum dot. The exact feedback-controlled non-Markovian Langevin equation is derived for describing the dynamics of the quantum dot. To deal with the nonlinear memory function in the Langevin equation, we analyse the Green’s function-based root locus, from which we show that the decoherence of the quantum dot can be suppressed via increasing the feedback coupling strength. The effectiveness of decoherence suppression induced by non-Markovian coherent feedback is demonstrated by a single quantum dot example bathed with Lorentzian noises.

  18. Inversion of hysteresis in quantum dot controlled quantum-wire transistor

    NASA Astrophysics Data System (ADS)

    Müller, C. R.; Worschech, L.; Forchel, A.

    2009-05-01

    In a quantum-wire transistor, pronounced floating-gate function of quantum dots is demonstrated with large threshold hysteresis exceeding 1.5 V. The charge state of the quantum dots is electrically controlled and, by applying a critical bias voltage along the quantum wire, the charging mechanism of the quantum dots is deactivated or, for bias voltages above this critical bias point, even inverted. It is shown that the charging as well as discharging of the quantum dots can be selectively switched off; i.e., the floating-gate function of the quantum dots is suppressed. The inversion of the hysteresis is explained within the framework of a capacitor model and the control of the charging mechanism is attributed to a dynamic gate efficiency of the quantum wire, which can be either larger or smaller than the quantum dot gate efficiency.

  19. Electrostatically defined silicon quantum dots with counted antimony donor implants

    SciTech Connect

    Singh, M. Luhman, D. R.; Lilly, M. P.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S.

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  20. Energy levels of bilayer graphene quantum dots

    NASA Astrophysics Data System (ADS)

    da Costa, D. R.; Zarenia, M.; Chaves, Andrey; Farias, G. A.; Peeters, F. M.

    2015-09-01

    Within a tight binding approach we investigate the energy levels of hexagonal and triangular bilayer graphene (BLG) quantum dots (QDs) with zigzag and armchair edges. We study AA- and AB- (Bernal) stacked BLG QDs and obtain the energy levels in both the absence and the presence of a perpendicular electric field (i.e., biased BLG QDs). Our results show that the size dependence of the energy levels is different from that of monolayer graphene QDs. The energy spectrum of AB-stacked BLG QDs with zigzag edges exhibits edge states which spread out into the opened energy gap in the presence of a perpendicular electric field. We found that the behavior of these edges states is different for the hexagonal and triangular geometries. In the case of AA-stacked BLG QDs, the electron and hole energy levels cross each other in both cases of armchair and zigzag edges as the dot size or the applied bias increases.

  1. Lateral excitonic switching in vertically stacked quantum dots

    SciTech Connect

    Jarzynka, Jarosław R.; McDonald, Peter G.; Galbraith, Ian; Shumway, John

    2016-06-14

    We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.

  2. Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

    SciTech Connect

    Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.

    2011-12-23

    The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

  3. Nano-laser on silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li

    2011-04-01

    A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d < 3 nm) can make the localized states into band gap. The emission energy of nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.

  4. Performance analysis of quantum dots infrared photodetector

    NASA Astrophysics Data System (ADS)

    Liu, Hongmei; Zhang, Fangfang; Zhang, Jianqi; He, Guojing

    2011-08-01

    Performance analysis of the quantum dots infrared photodetector(QDIP), which can provide device designers with theoretical guidance and experimental verification, arouses a wide interest and becomes a hot research topic in the recent years. In the paper, in comparison with quantum well infrared photodetector(QWIP) characteristic, the performance of QDIP is mainly discussed and summarized by analyzing the special properties of quantum dots material. To be specific, the dark current density and the detectivity in the normalized incident phenomenon are obtained from Phillip performance model, the carrier lifetime and the dark current of QDIP are studied by combing with the "photon bottleneck" effect, and the detectivity of QDIP is theoretically derived from considering photoconduction gain under the influence of the capture probability. From the experimental results, a conclusion is made that QDIP can not only receive the normal incidence light, but also has the advantages of the long carrier life, the big photoconductive gain, the low dark current and so on, and it further illustrates a anticipated superiority of QDIP in performance and a wide use of QDIP in many engineering fields in the future.

  5. Increased normal incidence photocurrent in quantum dot infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Shao, Jiayi; Vandervelde, Thomas E.; Barve, Ajit; Stintz, Andreas; Krishna, Sanjay

    2012-12-01

    We have increased the ratio of s-polarization (normal incidence) to p-polarization photocurrent to 50% in a quantum dot-in-a-well based infrared photodetector form the typical s-p polarization ratio about 20%. This improvement was achieved by engineering the dot geometry and the quantum confinement via post growth capping materials of the Stranski Krastanov growth mode quantum dots (QDs). The TEM images show that the height to base ratio of shape engineered QDs was increased to 8 nm/12 nm from the control sample's ratio 4 nm/17 nm. The dot geometry correlates with the polarized photocurrent measurements of the detector.

  6. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Frost, Thomas; Hazari, Arnab; Aiello, Anthony; Zunaid Baten, Md; Yan, Lifan; Mirecki-Millunchick, Joanna; Bhattacharya, Pallab

    2016-03-01

    InGaN/GaN self-organized quantum dots can provide useful advantages over quantum wells for the realization of long-wavelength visible light sources because the dots are formed by strain relaxation. A III-nitride based laser emitting in the red (λ ˜ 630 nm), which has not been demonstrated with quantum wells, would be useful for a host of applications. We have investigated the epitaxy and characteristics of self-organized InGaN/GaN multiple layer quantum dots grown by plasma-assisted molecular beam epitaxy and have optimized their properties by tuning the growth parameters. Red-emitting (λ ˜ 630 nm) quantum dots have radiative lifetime ˜2.5 ns and internal quantum efficiency greater than 50%. Edge-emitting red-lasers with multi-dot layers in the active region exhibit an extremely low threshold current density of 1.6 kA/cm2, a high temperature coefficient T0 = 240 K, and a large differential gain dg/dn = 9 × 10-17 cm2.

  7. Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins

    NASA Astrophysics Data System (ADS)

    Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou

    2016-07-01

    We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.

  8. Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

    PubMed

    Wen, Lei; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

    2016-08-01

    The growth process of InAs quantum dots grown on GaAs (511)A substrates has been studied by atomic force microscopy. According to the atomic force microscopy studies for quantum dots grown with varying InAs coverage, a noncoherent nucleation of quantum dots is observed. Moreover, due to the long migration length of In atoms, the Ostwald ripening process is aggravated, resulting in the bad uniformity of InAs quantum dots on GaAs (511)A. In order to improve the uniformity of nucleation, the growth rate is increased. By studying the effects of increased growth rates on the growth of InAs quantum dots, it is found that the uniformity of InAs quantum dots is greatly improved as the growth rates increase to 0.14 ML s(-1) . However, as the growth rates increase further, the uniformity of InAs quantum dots becomes dual-mode, which can be attributed to the competition between Ostwald ripening and strain relaxation processes. The results in this work provide insights regarding the competition between thermal dynamical barriers and the growth kinetics in the growth of InAs quantum dots, and give guidance to improve the size uniformity of InAs quantum dots on (N11)A substrates. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Quantum model for mode locking in pulsed semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Beugeling, W.; Uhrig, Götz S.; Anders, Frithjof B.

    2016-12-01

    Quantum dots in GaAs/InGaAs structures have been proposed as a candidate system for realizing quantum computing. The short coherence time of the electronic quantum state that arises from coupling to the nuclei of the substrate is dramatically increased if the system is subjected to a magnetic field and to repeated optical pulsing. This enhancement is due to mode locking: oscillation frequencies resonant with the pulsing frequencies are enhanced, while off-resonant oscillations eventually die out. Because the resonant frequencies are determined by the pulsing frequency only, the system becomes immune to frequency shifts caused by the nuclear coupling and by slight variations between individual quantum dots. The effects remain even after the optical pulsing is terminated. In this work, we explore the phenomenon of mode locking from a quantum mechanical perspective. We treat the dynamics using the central-spin model, which includes coupling to 10-20 nuclei and incoherent decay of the excited electronic state, in a perturbative framework. Using scaling arguments, we extrapolate our results to realistic system parameters. We estimate that the synchronization to the pulsing frequency needs time scales in the order of 1 s .

  10. Fast synthesize ZnO quantum dots via ultrasonic method.

    PubMed

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. Energy transfer in hybrid systems quantum dot-plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Chaplik, A. V.

    2016-06-01

    Radiationless relaxation in hybrid systems quantum dot (QD)-plasmonic nanostructure is considered. For the system QD-2D plasma the relaxation rate extremely steeply depends on the radius of quantum dot while in the pair QD-cylindrical wire contacting each other this dependence is logarithmic weak.

  12. Quantum-dot cluster-state computing with encoded qubits

    SciTech Connect

    Weinstein, Yaakov S.; Hellberg, C. Stephen; Levy, Jeremy

    2005-08-15

    A class of architectures is advanced for cluster-state quantum computation using quantum dots. These architectures include using single and multiple dots as logical qubits. Special attention is given to supercoherent qubits introduced by Bacon et al. [Phys. Rev. Lett. 87, 247902 (2001)] for which we discuss the effects of various errors and present a means of error protection.

  13. Spin-dependent shot noise enhancement in a quantum dot

    NASA Astrophysics Data System (ADS)

    Ubbelohde, Niels; Fricke, Christian; Hohls, Frank; Haug, Rolf J.

    2013-07-01

    The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels.

  14. Non-Equilibrium Quantum Dots: Transport

    DTIC Science & Technology

    1990-03-19

    William R Frensley, Rajni J Aggarwal, Richard J Matyi, Tom M Moore, and Anna E Wetsel for their contributions and R K Aldert, E D Pijan, D A Schultz, P...Peacock D C, Ritchie D A and Jones G A C 1988 J . Phys. C: Solid State Phys. L209 Moore T M and Wetsel A E 1988 Phys. Rev. Lett. 60 535 [lZ...Reed M A, Randall J N, Luscombe J H, Frensley W R, Aggarwal R J, Matyi R J, Moore T M and Wetsel A E 1989 Quantum Dot Resonant lbnnelling Spectroscopy

  15. Quantum dots confined in nanoporous alumina membranes

    NASA Astrophysics Data System (ADS)

    Xu, Jun; Xia, Jianfeng; Wang, Jun; Shinar, Joseph; Lin, Zhiqun

    2006-09-01

    CdSe /ZnS core/shell quantum dots (QDs) were filled into porous alumina membranes (PAMs) by dip coating. The deposition of QDs induced changes in the refractive index of the PAMs. The amount of absorbed QDs was quantified by fitting the reflection and transmission spectra observed experimentally with one side open and freestanding (i.e., with two sides open) PAMs employed, respectively. The fluorescence of the QDs was found to be retained within the cylindrical nanopores of the PAMs.

  16. Luminescence studies of individual quantum dot photocatalysts.

    PubMed

    Amirav, Lilac; Alivisatos, A Paul

    2013-09-04

    Using far-field optical microscopy we report the first measurements of photoluminescence from single nanoparticle photocatalysts. Fluence-dependent luminescence is investigated from metal-semiconductor heterojunction quantum dot catalysts exposed to a variety of environments, ranging from gaseous argon to liquid water containing a selection of hole scavengers. The catalysts each exhibit characteristic nonlinear fluence dependence. From these structurally and environmentally sensitive trends, we disentangle the separate rate-determining steps in each particle across the very wide range of time scales, which follow the initial light absorption process. This information will significantly benefit the design of effective artificial photocatalytic systems for renewable direct solar-to-fuel energy conversion.

  17. Controlling quantum dot emission by plasmonic nanoarrays.

    PubMed

    Guo, R; Derom, S; Väkeväinen, A I; van Dijk-Moes, R J A; Liljeroth, P; Vanmaekelbergh, D; Törmä, P

    2015-11-02

    Metallic nanoparticle arrays support localized surface plasmon resonances (LSPRs) and propagating surface lattice resonances (SLRs). We study the control of quantum dot (QD) emission coupled to the optical modes of silver nanoparticle arrays, both experimentally and numerically. With a hybrid lithography-functionalization method, the QDs are deposited in the vicinity of the nanoparticles. Directionality and enhancement of the emission are observed in photoluminescence spectra and fluorescence lifetime measurements, respectively. Similar features are also demonstrated in the numerical simulations. The tunable emission of this type of hybrid structures could lead to potential applications in light sources.

  18. A hybrid silicon evanescent quantum dot laser

    NASA Astrophysics Data System (ADS)

    Jang, Bongyong; Tanabe, Katsuaki; Kako, Satoshi; Iwamoto, Satoshi; Tsuchizawa, Tai; Nishi, Hidetaka; Hatori, Nobuaki; Noguchi, Masataka; Nakamura, Takahiro; Takemasa, Keizo; Sugawara, Mitsuru; Arakawa, Yasuhiko

    2016-09-01

    We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred by direct wafer bonding onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors. The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T 0 of 303 K near room temperature. Furthermore, by reducing the width of the GaAs/AlGaAs mesa down to 8 µm, continuous-wave operation is realized at 25 °C.

  19. Quantum dot intermixing using excimer laser irradiation

    SciTech Connect

    Djie, H. S.; Ooi, B. S; Gunawan, O.

    2006-08-21

    The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm{sup 2} and 150 pulses to the SiO{sub 2} capped shallow QD structure, while the nonirradiated SiO{sub 2} and Si{sub x}N{sub y} capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.

  20. Quantum dot loaded immunomicelles for tumor imaging

    PubMed Central

    2010-01-01

    Background Optical imaging is a promising method for the detection of tumors in animals, with speed and minimal invasiveness. We have previously developed a lipid coated quantum dot system that doubles the fluorescence of PEG-grafted quantum dots at half the dose. Here, we describe a tumor-targeted near infrared imaging agent composed of cancer-specific monoclonal anti-nucleosome antibody 2C5, coupled to quantum dot (QD)-containing polymeric micelles, prepared from a polyethylene glycol/phosphatidylethanolamine (PEG-PE) conjugate. Its production is simple and involves no special equipment. Its imaging potential is great since the fluorescence intensity in the tumor is twofold that of non-targeted QD-loaded PEG-PE micelles at one hour after injection. Methods Para-nitrophenol-containing (5%) PEG-PE quantum dot micelles were produced by the thin layer method. Following hydration, 2C5 antibody was attached to the PEG-PE micelles and the QD-micelles were purified using dialysis. 4T1 breast tumors were inoculated subcutaneously in the flank of the animals. A lung pseudometastatic B16F10 melanoma model was developed using tail vein injection. The contrast agents were injected via the tail vein and mice were depilated, anesthetized and imaged on a Kodak Image Station. Images were taken at one, two, and four hours and analyzed using a methodology that produces normalized signal-to-noise data. This allowed for the comparison between different subjects and time points. For the pseudometastatic model, lungs were removed and imaged ex vivo at one and twenty four hours. Results The contrast agent signal intensity at the tumor was double that of the passively targeted QD-micelles with equally fast and sharply contrasted images. With the side views of the animals only tumor is visible, while in the dorsal view internal organs including liver and kidney are visible. Ex vivo results demonstrated that the agent detects melanoma nodes in a lung pseudometastatic model after a 24 hours

  1. Vacancy clusters in graphane as quantum dots.

    PubMed

    Singh, Abhishek K; Penev, Evgeni S; Yakobson, Boris I

    2010-06-22

    Complementary electronic properties and a tendency to form sharp graphene-graphane interfaces open tantalizing possibilities for two-dimensional nanoelectronics. First-principles density functional and tight-binding calculations show that graphane can serve as natural host for graphene quantum dots, clusters of vacancies in the hydrogen sublattice. Their size n, shape, and stability are governed by the aromaticity and interfaces, resulting in formation energies approximately 1/ radicaln eV/atom and preference to hexagonal clusters congruent with lattice hexagons (i.e., with armchair edge). Clusters exhibit large gaps approximately 15/ radicaln eV with size dependence typical for confined Dirac fermions.

  2. Protease sensing using nontoxic silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Cheng, Xiaoyu; McVey, Benjamin F. P.; Robinson, Andrew B.; Longatte, Guillaume; O'Mara, Peter B.; Tan, Vincent T. G.; Thordarson, Pall; Tilley, Richard D.; Gaus, Katharina; Justin Gooding, John

    2017-08-01

    Herein is presented a proof-of-concept study of protease sensing that combines nontoxic silicon quantum dots (SiQDs) with Förster resonance energy transfer (FRET). The SiQDs serve as the donor and an organic dye as the acceptor. The dye is covalently attached to the SiQDs using a peptide linker. Enzymatic cleavage of the peptide leads to changes in FRET efficiency. The combination of interfacial design and optical imaging presented in this work opens opportunities for use of nontoxic SiQDs relevant to intracellular sensing and imaging.

  3. Quantum Dots for Molecular Diagnostics of Tumors

    PubMed Central

    Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

    2011-01-01

    Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imagingin vivo. We also point out the essential problems that require resolution in order to clinically promote QD, and we indicate innovative approaches to oncology which are implementable using QD. PMID:22649672

  4. Trion decay in colloidal quantum dots.

    PubMed

    Jha, Praket P; Guyot-Sionnest, Philippe

    2009-04-28

    Using charged films of colloidal CdSe/CdS core/shell quantum dots of approximately 3.5 to 4.5 nm core diameters and 0.6 to 1.2 nm thick CdS shells, the radiative and nonradiative decay of the negatively charged exciton, the trion T-, are measured. The T- radiative rate is faster than the exciton by a factor of 2.2 +/- 0.4 and estimated at approximately 10 ns. The T- lifetime is approximately 0.7-1.5 ns for the samples measured and is longer than the biexciton lifetime by a factor or 7.5 +/- 1.7.

  5. Mesoscopic admittance of a double quantum dot

    SciTech Connect

    Cottet, Audrey; Mora, Christophe; Kontos, Takis

    2011-03-15

    We calculate the mesoscopic admittance G({omega}) of a double quantum dot (DQD), which can be measured directly using microwave techniques. This quantity reveals spectroscopic information on the DQD and is also directly sensitive to a Pauli spin blockade effect. We then discuss the problem of a DQD coupled to a high quality photonic resonator. When the photon correlation functions can be developed along a random-phase-approximation-like scheme, the response of the resonator gives an access to G({omega}).

  6. Hyper-parallel photonic quantum computation with coupled quantum dots

    PubMed Central

    Ren, Bao-Cang; Deng, Fu-Guo

    2014-01-01

    It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF. PMID:24721781

  7. Interaction of porphyrins with CdTe quantum dots.

    PubMed

    Zhang, Xing; Liu, Zhongxin; Ma, Lun; Hossu, Marius; Chen, Wei

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  8. Non-blinking quantum dot with a plasmonic nanoshell resonator.

    PubMed

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  9. Combinatorial Approach to Studying Metal Enhanced Fluorescence from Quantum Dots

    NASA Astrophysics Data System (ADS)

    Le, Nguyet; Corrigan, Timothy; Norton, Michael; Neff, David

    2013-03-01

    Fluorescence is extensively used in biochemistry for determining the concentration or purity of molecules in a biological environment. In metal-enhanced fluorescence (MEF), the fluorescence molecules separated from a metal surface by several nanometers can be enhanced. The fluorescent enhancement is dependent on the size and spacing of the nanoparticles, as has been shown previously for a number of fluorophore molecules. Fluorescence from quantum dots is of particular interest because the quantum dots do not lose fluorescence ability when exposed to light and they have higher intensity of fluorescence. The purpose of this study is to determine the effect of size and spacing on fluorescence intensity when coupling gold nano-particles with quantum dots. We employ a combinatorial approach, depositing gold particles ranging in diameter from 30 nm to 130 nm with varied spacings onto the substrate, followed by a protein spacer-layer and quantum dots. The fluorescence signal from the metal enhanced quantum dots were determined by confocal microscopy.

  10. Non-blinking quantum dot with a plasmonic nanoshell resonator

    NASA Astrophysics Data System (ADS)

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  11. Quantum dots find their stride in single molecule tracking

    PubMed Central

    Bruchez, Marcel P.

    2011-01-01

    Thirteen years after the demonstration of quantum dots as biological imaging agents, and nine years after the initial commercial introduction of bioconjugated quantum dots, the brightness and photostability of the quantum dots has enabled a range of investigations using single molecule tracking. These materials are being routinely utilized by a number of groups to track the dynamics of single molecules in reconstituted biophysical systems and on living cells, and are especially powerful for investigations of single molecules over long timescales with short exposure times and high pointing accuracy. New approaches are emerging where the quantum dots are used as “hard-sphere” probes for intracellular compartments. Innovations in quantum dot surface modification are poised to substantially expand the utility of these materials. PMID:22055494

  12. 3D super-resolution imaging with blinking quantum dots

    PubMed Central

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  13. Quantum Dots in Diagnostics and Detection: Principles and Paradigms

    PubMed Central

    Pisanic, T. R.; Zhang, Y.; Wang, T. H.

    2014-01-01

    Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection. PMID:24770716

  14. Quantum dots in diagnostics and detection: principles and paradigms.

    PubMed

    Pisanic, T R; Zhang, Y; Wang, T H

    2014-06-21

    Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection.

  15. Numerical simulation of optical feedback on a quantum dot lasers

    SciTech Connect

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  16. A high-temperature single-photon source from nanowire quantum dots.

    PubMed

    Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

    2008-12-01

    We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

  17. Engineering quantum dots for electrical control of the fine structure splitting

    NASA Astrophysics Data System (ADS)

    Pooley, M. A.; Bennett, A. J.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

    2013-07-01

    We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample, we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths, and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift, and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.

  18. Biosensing with Luminescent Semiconductor Quantum Dots

    PubMed Central

    Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi

    2006-01-01

    Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapting QDs for several predominantly in vitro biosensing applications including use in immunoassays, as generalized probes, in nucleic acid detection and fluorescence resonance energy transfer (FRET) - based sensing. We also describe several important considerations when working with QDs mainly centered on the choice of material(s) and appropriate strategies for attaching biomolecules to the QDs.

  19. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  20. Semiconductor Quantum Dots for Biomedicial Applications

    PubMed Central

    Shao, Lijia; Gao, Yanfang; Yan, Feng

    2011-01-01

    Semiconductor quantum dots (QDs) are nanometre-scale crystals, which have unique photophysical properties, such as size-dependent optical properties, high fluorescence quantum yields, and excellent stability against photobleaching. These properties enable QDs as the promising optical labels for the biological applications, such as multiplexed analysis of immunocomplexes or DNA hybridization processes, cell sorting and tracing, in vivo imaging and diagnostics in biomedicine. Meanwhile, QDs can be used as labels for the electrochemical detection of DNA or proteins. This article reviews the synthesis and toxicity of QDs and their optical and electrochemical bioanalytical applications. Especially the application of QDs in biomedicine such as delivering, cell targeting and imaging for cancer research, and in vivo photodynamic therapy (PDT) of cancer are briefly discussed. PMID:22247690

  1. Semiconductor quantum dot-sensitized solar cells

    PubMed Central

    Tian, Jianjun; Cao, Guozhong

    2013-01-01

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178

  2. Semiconductor quantum dot-sensitized solar cells.

    PubMed

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  3. Silicon quantum dots for biological applications.

    PubMed

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.

  4. Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

    PubMed

    Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

    2013-07-19

    Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively.

  5. Andreev molecules in semiconductor nanowire double quantum dots.

    PubMed

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  6. Electron Spin Qubits in Si/SiGe Quantum Dots

    NASA Astrophysics Data System (ADS)

    Eriksson, Mark

    2010-10-01

    It is intriguing that silicon, the central material of modern classical electronics, also has properties well suited to quantum electronics. Recent advances in Si/SiGe quantum devices have enabled the creation of high-quality silicon quantum dots, also known as artificial atoms. Motivated in part by the potential for very long spin coherence times in this material, we are pursuing the development of individual electron spin qubits in silicon quantum dots. I will discuss recent demonstrations of single-shot spin measurement in a Si/SiGe quantum dot spin qubit, and the demonstration of spin-relaxation times longer than one second in such a system. These and similar measurements depend on a knowledge of tunnel rates between quantum dots and nearby reservoirs or between pairs of quantum dots. Measurements of such rates provide an opportunity to revisit classic experiments in quantum mechanics. At the same time, the unique features of the silicon conduction band lead to novel and unexpected effects, demonstrating that Si/SiGe quantum dots provide a highly controlled experimental system in which to study ideas at the heart of quantum physics.

  7. Quantum Dot Enabled Molecular Sensing and Diagnostics

    PubMed Central

    Zhang, Yi; Wang, Tza-Huei

    2012-01-01

    Since its emergence, semiconductor nanoparticles known as quantum dots (QDs) have drawn considerable attention and have quickly extended their applicability to numerous fields within the life sciences. This is largely due to their unique optical properties such as high brightness and narrow emission band as well as other advantages over traditional organic fluorophores. New molecular sensing strategies based on QDs have been developed in pursuit of high sensitivity, high throughput, and multiplexing capabilities. For traditional biological applications, QDs have already begun to replace traditional organic fluorophores to serve as simple fluorescent reporters in immunoassays, microarrays, fluorescent imaging applications, and other assay platforms. In addition, smarter, more advanced QD probes such as quantum dot fluorescence resonance energy transfer (QD-FRET) sensors, quenching sensors, and barcoding systems are paving the way for highly-sensitive genetic and epigenetic detection of diseases, multiplexed identification of infectious pathogens, and tracking of intracellular drug and gene delivery. When combined with microfluidics and confocal fluorescence spectroscopy, the detection limit is further enhanced to single molecule level. Recently, investigations have revealed that QDs participate in series of new phenomena and exhibit interesting non-photoluminescent properties. Some of these new findings are now being incorporated into novel assays for gene copy number variation (CNV) studies and DNA methylation analysis with improved quantification resolution. Herein, we provide a comprehensive review on the latest developments of QD based molecular diagnostic platforms in which QD plays a versatile and essential role. PMID:22916072

  8. Excitation transfer in stacked quantum dot chains

    NASA Astrophysics Data System (ADS)

    Kanjanachuchai, Songphol; Xu, Ming; Jaffré, Alexandre; Jittrong, Apichart; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed

    2015-05-01

    Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP) templates yield a rich emission spectrum with an unusual carrier transfer characteristic compared to conventional quantum dot (QD) stacks. The photoluminescent spectra of the controlled, single QDC layer comprise multiple peaks from the orthogonal QDCs, the free-standing QDs, the CHP, the wetting layers and the GaAs substrate. When the QDC layers are stacked, employing a 10 nm GaAs spacer between adjacent QDC layers, the PL spectra are dominated by the top-most stack, indicating that the QDC layers are nominally uncoupled. Under high excitation power densities when the high-energy peaks of the top stack are saturated, however, low-energy PL peaks from the bottom stacks emerge as a result of carrier transfers across the GaAs spacers. These unique PL signatures contrast with the state-filling effects in conventional, coupled QD stacks and serve as a means to quickly assess the presence of electronic coupling in stacks of dissimilar-sized nanostructures.

  9. Using quantum dot photoluminescence for load detection

    SciTech Connect

    Moebius, M. Hartwig, M.; Martin, J.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-15

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  10. Colloidal quantum dot light-emitting devices.

    PubMed

    Wood, Vanessa; Bulović, Vladimir

    2010-01-01

    Colloidal quantum dot light-emitting devices (QD-LEDs) have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI). We review the key advantages of using quantum dots (QDs) in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs - optical excitation, Förster energy transfer, and direct charge injection - that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt). We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  11. Fourier transform spectra of quantum dots

    NASA Astrophysics Data System (ADS)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2009-09-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  12. Fourier transform spectra of quantum dots

    NASA Astrophysics Data System (ADS)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2010-05-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  13. Competing interactions in semiconductor quantum dots

    DOE PAGES

    van den Berg, R.; Brandino, G. P.; El Araby, O.; ...

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

  14. Using quantum dot photoluminescence for load detection

    NASA Astrophysics Data System (ADS)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  15. Competing interactions in semiconductor quantum dots

    SciTech Connect

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  16. Open quantum dots in graphene: Scaling relativistic pointer states

    NASA Astrophysics Data System (ADS)

    Ferry, D. K.; Huang, L.; Yang, R.; Lai, Y.-C.; Akis, R.

    2010-04-01

    Open quantum dots provide a window into the connection between quantum and classical physics, particularly through the decoherence theory, in which an important set of quantum states are not "washed out" through interaction with the environment-the pointer states provide connection to trapped classical orbits which remain stable in the dots. Graphene is a recently discovered material with highly unusual properties. This single layer, one atom thick, sheet of carbon has a unique bandstructure, governed by the Dirac equation, in which charge carriers imitate relativistic particles with zero rest mass. Here, an atomic orbital-based recursive Green's function method is used for studying the quantum transport. We study quantum fluctuations in graphene and bilayer graphene quantum dots with this recursive Green's function method. Finally, we examine the scaling of the domiant fluctuation frequency with dot size.

  17. Charge-extraction strategies for colloidal quantum dot photovoltaics

    NASA Astrophysics Data System (ADS)

    Lan, Xinzheng; Masala, Silvia; Sargent, Edward H.

    2014-03-01

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p- and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction.

  18. Leveraging Crystal Anisotropy for Deterministic Growth of InAs Quantum Dots with Narrow Optical Linewidths

    DTIC Science & Technology

    2013-08-29

    spin qubit for quantum information. KEYWORDS: Quantum dot , InAs, molecular beam epitaxy, site...removes a major obstacle toward sophisticated quantum dot complexes such as a quantum network of spin qubits . Methods. Substrate Patterning. Lines and...controlled, quantum information, single photon source Epitaxial quantum dots (QDs) have atom-like electronicproperties, including long coherence

  19. Quantum dot-sensitized hierarchical micro/nanowire architecture for photoelectrochemical water splitting.

    PubMed

    Sheng, Wenjun; Sun, Bo; Shi, Tielin; Tan, Xianhua; Peng, Zhengchun; Liao, Guanglan

    2014-07-22

    We report the fabrication of quantum dot-sensitized hierarchical structure and the application of the structure as a photoanode for photoelectrochemical water splitting. The structure is synthesized by hydrothermally growing ZnO nanowires on silicon microwires grown with the vapor-liquid-solid method. Then the hierarchical structure is further sensitized with CdS and CdSe quantum dots and modified with IrOx quantum dots. As a result, the silicon microwires, ZnO nanowires, and the quantum dot/ZnO core/shell structure form a multiple-level hierarchical heterostructure, which is remarkably beneficial for light absorption and charge carrier separation. Our experimental results reveal that the photocurrent density of our multiple-level hierarchical structure achieves a surprising 171 times enhancement compared to that from simple ZnO nanowires on a planar substrate. In addition, the photoanode shows high stability during the water-splitting experiment. These results prove that the quantum dot-sensitized hierarchical structure is an ideal candidate for a photoanode in solar water splitting applications. Importantly, the modular design approach we take to produce the photoanode allows for the integration of future discoveries for further improvement of its performance.

  20. Optical properties of individual site-controlled Ge quantum dots

    SciTech Connect

    Grydlik, Martyna E-mail: martyna.grydlik@jku.at; Brehm, Moritz E-mail: martyna.grydlik@jku.at; Tayagaki, Takeshi; Langer, Gregor; Schäffler, Friedrich; Schmidt, Oliver G.

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  1. Diagnostic and Therapeutic Applications of Quantum Dots in Nanomedicine.

    PubMed

    Kamila, Sukanta; McEwan, Conor; Costley, David; Atchison, Jordan; Sheng, Yinjie; Hamilton, Graham R C; Fowley, Colin; Callan, John F

    2016-01-01

    The interest in Quantum Dots as a class of nanomaterials has grown considerably since their discovery by Ekimov and Efros in the early 1980s. Although this early work focussed primarily on CdSe-based nanocrystals, the field has now expanded to include various classes of nanoparticles with different types of core, shell or passivation chemistry. Such differences can have a profound effect on the optical properties and potential biocompatibility of the resulting constructs. Although QDs have predominantly been used for imaging and sensing applications, more examples of their use as therapeutics are beginning to emerge. In this chapter we discuss the progress made over the past decade in developing QDs for imaging and therapeutic applications.

  2. Lasing from Glassy Ge Quantum Dots in Crystalline Si

    PubMed Central

    2016-01-01

    Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor optoelectronic properties of bulk Si and Ge. Here we demonstrate that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB). In contrast to conventional SiGe nanostructures, these QDs exhibit dramatically shortened carrier lifetimes and negligible thermal quenching of the photoluminescence (PL) up to room temperature. Microdisk resonators with embedded GIB-QDs exhibit threshold behavior as well as a superlinear increase of the integrated PL intensity with concomitant line width narrowing as the pump power increases. These findings demonstrate light amplification by stimulated emission in a fully SIT-compatible group IV nanosystem. PMID:26937421

  3. Ultra-low density InAs quantum dots

    SciTech Connect

    Dubrovskii, V. G. Cirlin, G. E.; Brunkov, P. A.; Perimetti, U.; Akopyan, N.

    2013-10-15

    We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10{sup 7} cm{sup -2} without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3-1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10{sup 7}-10{sup 8} cm{sup -2}, exhibiting bright photoluminescence.

  4. Multiple Exciton Generation in Semiconductor Quantum Dots.

    PubMed

    Beard, Matthew C

    2011-06-02

    Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by utilizing the excess energy in the absorbed photons. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot excitons in bulk semiconductors. However, variations in the reported enhanced quantum yields (QYs) have led to disagreements over the role that quantum confinement plays. The enhanced yield of excitons per absorbed photon is deduced from a dynamical signature in the transient absorption or transient photoluminescence and is ascribed to the creation of biexcitons. Extraneous effects such as photocharging are partially responsible for the observed variations. When these extraneous effects are reduced, the MEG efficiency, defined in terms of the number of additional electron-hole pairs produced per additional band gap of photon excitation, is about two times better in PbSe QDs than that in bulk PbSe. Thin films of electronically coupled QDs have shown promise in simple photon-to-electron conversion architectures. If the MEG efficiency can be further enhanced and charge separation and transport can be optimized within QD films, then QD solar cells can lead to third-generation solar energy conversion technologies.

  5. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    NASA Technical Reports Server (NTRS)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  6. Luminescent properties of cadmium selenide quantum dots in fluorophosphate glasses

    NASA Astrophysics Data System (ADS)

    Lipatova, Zh. O.; Kolobkova, E. V.; Babkina, A. N.

    2016-11-01

    The optical properties of fluorophosphate glasses with CdSe quantum dots are studied. Secondary heat treatment at a temperature exceeding the glass transition temperature resulted in the formation of quantum dots with sizes of 3.7-6.2 nm. The influence of the semiconductor component concentration on the spectral-luminescent characteristics of glasses is shown. It is experimentally demonstrated that glasses with a lower CdSe concentration have a higher absolute luminescence quantum yield.

  7. PbTe quantum dots multilayer for optical switching device

    NASA Astrophysics Data System (ADS)

    Rodriguez, E.; Kellermann, G.; Moya, L.; Moreira, R. S.; Craievich, A. F.; Jimenez, E.; César, C. L.; Barbosa, L. C.

    2007-09-01

    In this work we report the fabrication of PbTe quantum dots multilayers embedded in SiO II by alternatively use of Laser Ablation and Plasma Enhanced Chemical Vapor Deposition techniques. The quantum dots were grown by pulsed laser deposition (PLD) of a PbTe target using the second harmonic of a Q-Switched Quantel Nd:YAG laser in high purity argon atmosphere. The glass matrix was fabricated by PECVD using tetramethoxysilane (TMOS) as precursor. The RF power was supplied by a RF-150 TOKYO HI-Power operating at 13.56 MHz and coupled to the RF electrodes through a matching box. The deposition rates as well as the best growth parameters for both the nanoparticles and the glass matrix were obtained from a previous work. The morphological properties of the nanostructured material were studied by means of igh Resolution Transmission Electron Microscopy(HRTEM), grazing-incidence small-angle X-ray scattering (GISAXS) and X-ray reflectometry . Unlike HRTEM, which extracts information of a submicron region of the sample and only a few thousand particles are observed, GISAXS signal is obtained through an average over orders of magnitude larger number of particles (perhaps 10 12 particles) distributed over an area of tens of square millimeters. This fact means that GISAXS sampling is much more representative of the sample as whole. Finally, multilayers were grown inside a Fabry-Perot cavity. The complete system operates as an optical switching device for the infrared region. The device was characterized by Scanning Electron Microscopy and optical absorption.

  8. Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots

    SciTech Connect

    Chang, Y. C.; Robson, A. J.; Harrison, S.; Zhuang, Q. D.; Hayne, M.

    2015-06-15

    We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

  9. Quantum fluctuations in semiconductor quantum dots and their contributions to the self-energy functions of exciton states

    NASA Astrophysics Data System (ADS)

    Mutygullina, A. A.; Khamadeev, M. A.; Blum, D. O.; Shirdelhavar, A. H.

    2017-06-01

    Influence of quantum fluctuations in a system consisting of a quantum dot and the reservoir of acoustic phonons on processes in which the quantum dot takes part is investigated. Under some conditions this influence is shown to be very strong. We find a contribution from the quantum fluctuations to the self-energy function of the exciton coupled to the quantum dot.

  10. Spins of Andreev states in double quantum dots

    NASA Astrophysics Data System (ADS)

    Su, Zhaoen; Chen, Jun; Yu, Peng; Hocervar, Moira; Plissard, Sebastien; Car, Diana; Tacla, Alexandre; Daley, Andrew; Pekker, David; Bakkers, Erik; Frolov, Sergey

    Andreev (or Shiba) states in coupled double quantum dots is an open field. Here we demonstrate the realization of Andreev states in double quantum dots in an InSb nanowire coupled to two NbTiN superconductors. The magnetic field dependence of the Andreev states has been explored to resolve the spins in different double dot configurations. The experiment helps to understand the interplay between pair correlation, exchange energy and charging energy with a well-controlled system. It also opens the possibility to implement Majorana modes in Kitaev chains made of such dots.

  11. Atomic scale investigations on Cd{sub x}Zn{sub 1−x}Se quantum dots: Correlation between the composition and emission properties

    SciTech Connect

    Benallali, H. Hoummada, K.; Mangelinck, D.; Cremel, T.; André, R.; Tatarenko, S.; Kheng, K.

    2014-08-04

    Atom probe tomography and photoluminescence spectroscopy have been used to study Cd{sub x}Zn{sub 1−x}Se quantum dots embedded in a ZnSe layer grown on a (001) GaAs substrate. Atom probe tomography analyses show significant cadmium incorporation in the center of the dots surrounded by poor cadmium region. These measurements illustrate that the maximum cadmium concentration in the quantum dots is significantly higher than the concentration estimated by transmission electron microscopy. The composition and size of quantum dots obtained by atom probe tomography have been used to calculate the transition energies including excitonic and strain effects.

  12. On-chip quantum optics with quantum dots and superconducting resonators

    NASA Astrophysics Data System (ADS)

    Deng, Guang-Wei; Guo, Guo-Ping; Guo, Guang-Can

    2016-11-01

    Benefit from the recent nanotechnology process, people can integrate different nanostructures on a single chip. Particularly, quantum dots (QD), which behave as artificial atoms, have been shown to couple with a superconducting resonator, indicating that quantum-dot based quantum chip has a highly scalable possibility. Here we show a quantum chip architecture by combining graphene quantum dots and superconducting resonators together. A double quantum dot (DQD) and a microwave hybrid system can be described by the Jaynes-Cummings model, while a multi-quantum-dots system is conformed to the Tavis-Cummings model. These simple quantum optics models are experimentally realized in our device, providing a compelling platform for both graphene study and potential applications.

  13. Single spins in self-assembled quantum dots.

    PubMed

    Warburton, Richard J

    2013-06-01

    Self-assembled quantum dots have excellent photonic properties. For instance, a single quantum dot is a high-brightness, narrow-linewidth source of single photons. Furthermore, the environment of a single quantum dot can be tailored relatively easily using semiconductor heterostructure and post-growth processing techniques, enabling electrical control of the quantum dot charge and control over the photonic modes with which the quantum dot interacts. A single electron or hole trapped inside a quantum dot has spintronics applications. Although the spin dephasing is rather rapid, a single spin can be manipulated using optical techniques on subnanosecond timescales. Optical experiments are also providing new insights into old issues, such as the central spin problem. This Review provides a snapshot of this active field, with some indications for the future. It covers the basic materials and optical properties of single quantum dots, techniques for initializing, manipulating and reading out single spin qubits, and the mechanisms that limit the electron-spin and hole-spin coherence.

  14. Solution-processed colloidal lead sulfide quantum dots for near-infrared quantum information processing applications

    NASA Astrophysics Data System (ADS)

    Bose, Ranojoy

    In this thesis, we study solution-processed lead sulfide quantum dots for near-infrared quantum information and communication applications. Quantum dots processed through synthetic routes and colloidally suspended in solution offer far-reaching device application possibilities that are unparalelled in traditional self-assembled quantum dots. Lead sulfide quantum dots are especially promising for near-infrared quantum optics due to their optical emission at the wavelengths of fiber-optic communications (1.3--1.5 microm). The broad absorption spectrum of these quantum dots can be used for solar light-harvesting applications, to which end the results of Chapter 2---where we study Forster resonance energy transfer in quantum dot solids---provide remarkable insights into photon emission from quantum-dot based solar cells. In subsequent chapters, we explore quantum-dot photonic crystal applications, where exciton-photon interactions in the cavity environment remarkably allow for the emission of indistinguishable single photons that are important for distribution of high-security quantum keys---being highly sensitive to 'eavesdropping'. Particularly, the suggestion of the solution-processed QED system is novel compared to traditional self-assembled systems, and as we will discuss, offer integration and processing capabilities that are unprecedented, and perform well at wavelength ranges where standard QED systems scale poorly. The results of chapters 3--6 are therefore significant in the general field of cavity quantum electrodynamics.

  15. Quantum Monte Carlo finite temperature electronic structure of quantum dots

    NASA Astrophysics Data System (ADS)

    Leino, Markku; Rantala, Tapio T.

    2002-08-01

    Quantum Monte Carlo methods allow a straightforward procedure for evaluation of electronic structures with a proper treatment of electronic correlations. This can be done even at finite temperatures [1]. We test the Path Integral Monte Carlo (PIMC) simulation method [2] for one and two electrons in one and three dimensional harmonic oscillator potentials and apply it in evaluation of finite temperature effects of single and coupled quantum dots. Our simulations show the correct finite temperature excited state populations including degeneracy in cases of one and three dimensional harmonic oscillators. The simulated one and two electron distributions of a single and coupled quantum dots are compared to those from experiments and other theoretical (0 K) methods [3]. Distributions are shown to agree and the finite temperature effects are discussed. Computational capacity is found to become the limiting factor in simulations with increasing accuracy. Other essential aspects of PIMC and its capability in this type of calculations are also discussed. [1] R.P. Feynman: Statistical Mechanics, Addison Wesley, 1972. [2] D.M. Ceperley, Rev.Mod.Phys. 67, 279 (1995). [3] M. Pi, A. Emperador and M. Barranco, Phys.Rev.B 63, 115316 (2001).

  16. Laser synthesis and size tailor of carbon quantum dots

    NASA Astrophysics Data System (ADS)

    Hu, Shengliang; Liu, Jun; Yang, Jinlong; Wang, Yanzhong; Cao, Shirui

    2011-12-01

    Carbon quantum dots (C-dots) with average sizes of about 3, 8, and 13 nm were synthesized by laser irradiation of graphite flakes in polymer solution. The obtained C-dots display size and excitation wavelength dependent photoluminescence behavior. The size control of C-dots can be realized by tuning laser pulse width. The original reason could be the effects of laser pulse width on the conditions of nucleation and growth of C-dots. Compared with short-pulse-width laser, the long-pulse-width laser would be better fitted to the size and morphology control of nanostructures in the different material systems.

  17. Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

    NASA Astrophysics Data System (ADS)

    Pathak, Smita

    Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

  18. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  19. Gate-controlled electromechanical backaction induced by a quantum dot.

    PubMed

    Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

    2016-04-11

    Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

  20. The transfer matrix approach to circular graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Chau Nguyen, H.; Nguyen, Nhung T. T.; Nguyen, V. Lien

    2016-07-01

    We adapt the transfer matrix (T-matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. Similar to one-dimensional problems, we show that the generalized T-matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the T-matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons.

  1. Gate-controlled electromechanical backaction induced by a quantum dot

    PubMed Central

    Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

    2016-01-01

    Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter. PMID:27063939

  2. Full counting statistics of quantum dot resonance fluorescence

    PubMed Central

    Matthiesen, Clemens; Stanley, Megan J.; Hugues, Maxime; Clarke, Edmund; Atatüre, Mete

    2014-01-01

    The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097

  3. Recombination in quantum dot sensitized solar cells.

    PubMed

    Mora-Seró, Iván; Giménez, Sixto; Fabregat-Santiago, Francisco; Gómez, Roberto; Shen, Qing; Toyoda, Taro; Bisquert, Juan

    2009-11-17

    Quantum dot sensitized solar cells (QDSCs) have attracted significant attention as promising third-generation photovoltaic devices. In the form of quantum dots (QDs), the semiconductor sensitizers have very useful and often tunable properties; moreover, their theoretical thermodynamic efficiency might be as high as 44%, better than the original 31% calculated ceiling. Unfortunately, the practical performance of these devices still lags behind that of dye-sensitized solar cells. In this Account, we summarize the strategies for depositing CdSe quantum dots on nanostructured mesoporous TiO(2) electrodes and discuss the methods that facilitate improvement in the performance and stability of QDSCs. One particularly significant factor for solar cells that use polysulfide electrolyte as the redox couple, which provides the best performance among QDSCs, is the passivation of the photoanode surface with a ZnS coating, which leads to a dramatic increase of photocurrents and efficiencies. However, these solar cells usually show a poor current-potential characteristic, so a general investigation of the recombination mechanisms is required for improvements. A physical model based on recombination through a monoenergetic TiO(2) surface state that takes into account the effect of the surface coverage has been developed to better understand the recombination mechanisms of QDSCs. The three main methods of QD adsorption on TiO(2) are (i) in situ growth of QDs by chemical bath deposition (CBD), (ii) deposition of presynthesized colloidal QDs by direct adsorption (DA), and (iii) deposition of presynthesized colloidal QDs by linker-assisted adsorption (LA). A systematic investigation by impedance spectroscopy of QDSCs prepared by these methods showed a decrease in the charge-transfer resistance and increased electron lifetimes for CBD samples; the same result was found after ZnS coating because of the covering of the TiO(2) surface. The increase of the lifetime with the ZnS treatment

  4. Hybrid Circuit QED with Double Quantum Dots

    NASA Astrophysics Data System (ADS)

    Petta, Jason

    2014-03-01

    Cavity quantum electrodynamics explores quantum optics at the most basic level of a single photon interacting with a single atom. We have been able to explore cavity QED in a condensed matter system by placing a double quantum dot (DQD) inside of a high quality factor microwave cavity. Our results show that measurements of the cavity field are sensitive to charge and spin dynamics in the DQD.[2,3] We can explore non-equilibrium physics by applying a finite source-drain bias across the DQD, which results in sequential tunneling. Remarkably, we observe a gain as large as 15 in the cavity transmission when the DQD energy level detuning is matched to the cavity frequency. These results will be discussed in the context of single atom lasing.[4] I will also describe recent progress towards reaching the strong-coupling limit in cavity-coupled Si DQDs. In collaboration with Manas Kulkarni, Yinyu Liu, Karl Petersson, George Stehlik, Jacob Taylor, and Hakan Tureci. We acknowledge support from the Sloan and Packard Foundations, ARO, DARPA, and NSF.

  5. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    NASA Technical Reports Server (NTRS)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  6. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    NASA Technical Reports Server (NTRS)

    DeHaven, S. L.; Williams, P. A.; Burke, E. R.

    2015-01-01

    A novel concept for the detection of x-rays with microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide is presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dots application technique are discussed.

  7. Graphene mediated Stark shifting of quantum dot energy levels

    SciTech Connect

    Kinnischtzke, Laura; Badolato, Antonio; Goodfellow, Kenneth M.; Vamivakas, A. Nick; Chakraborty, Chitraleema; Lai, Yi-Ming; Fält, Stefan; Wegscheider, Werner

    2016-05-23

    We demonstrate an optoelectronic device comprised of single InAs quantum dots in an n-i-Schottky diode where graphene has been used as the Schottky contact. Deterministic electric field tuning is shown using Stark-shifted micro-photoluminescence from single quantum dots. The extracted dipole moments from the Stark shifts are comparable to conventional devices where the Schottky contact is a semi-transparent metal. Neutral and singly charged excitons are also observed in the well-known Coulomb-blockade plateaus. Our results indicate that graphene is a suitable replacement for metal contacts in quantum dot devices which require electric field control.

  8. Quantum dots microstructured optical fiber for x-ray detection

    NASA Astrophysics Data System (ADS)

    DeHaven, S. L.; Williams, P. A.; Burke, E. R.

    2016-02-01

    A novel concept for the detection of x-rays with microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide is presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dots application technique are discussed.

  9. Semiconductor Quantum Dots in Chemical Sensors and Biosensors

    PubMed Central

    Frasco, Manuela F.; Chaniotakis, Nikos

    2009-01-01

    Quantum dots are nanometre-scale semiconductor crystals with unique optical properties that are advantageous for the development of novel chemical sensors and biosensors. The surface chemistry of luminescent quantum dots has encouraged the development of multiple probes based on linked recognition molecules such as peptides, nucleic acids or small-molecule ligands. This review overviews the design of sensitive and selective nanoprobes, ranging from the type of target molecules to the optical transduction scheme. Representative examples of quantum dot-based optical sensors from this fast-moving field have been selected and are discussed towards the most promising directions for future research. PMID:22423206

  10. Energy levels in self-assembled quantum arbitrarily shaped dots.

    PubMed

    Tablero, C

    2005-02-08

    A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot.

  11. Graphene mediated Stark shifting of quantum dot energy levels

    NASA Astrophysics Data System (ADS)

    Kinnischtzke, Laura; Goodfellow, Kenneth M.; Chakraborty, Chitraleema; Lai, Yi-Ming; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Vamivakas, A. Nick

    2016-05-01

    We demonstrate an optoelectronic device comprised of single InAs quantum dots in an n-i-Schottky diode where graphene has been used as the Schottky contact. Deterministic electric field tuning is shown using Stark-shifted micro-photoluminescence from single quantum dots. The extracted dipole moments from the Stark shifts are comparable to conventional devices where the Schottky contact is a semi-transparent metal. Neutral and singly charged excitons are also observed in the well-known Coulomb-blockade plateaus. Our results indicate that graphene is a suitable replacement for metal contacts in quantum dot devices which require electric field control.

  12. Plasmonic quantum dot solar cells for enhanced infrared response

    NASA Astrophysics Data System (ADS)

    Feng Lu, Hao; Mokkapati, Sudha; Fu, Lan; Jolley, Greg; Hoe Tan, Hark; Jagadish, Chennupati

    2012-03-01

    Enhanced near infrared photoresponse in plasmonic InGaAs/GaAs quantum dot solar cells (QDSC) is demonstrated. Long wavelength light absorption in the wetting-layer and quantum-dot region of the quantum dot solar cell is enhanced through scattering of light by silver nanoparticles deposited on the solar cell surface. Plasmonic light trapping results in simultaneous increase in short-circuit current density by 5.3% and open circuit voltage by 0.9% in the QDSC, leading to an overall efficiency enhancement of 7.6%.

  13. Nonequilibrium spin noise in a quantum dot ensemble

    NASA Astrophysics Data System (ADS)

    Smirnov, D. S.; Glasenapp, Ph.; Bergen, M.; Glazov, M. M.; Reuter, D.; Wieck, A. D.; Bayer, M.; Greilich, A.

    2017-06-01

    The spin noise in singly charged self-assembled quantum dots is studied theoretically and experimentally under the influence of a perturbation, provided by additional photoexcited charge carriers. The theoretical description takes into account generation and relaxation of charge carriers in the quantum dot system. The spin noise is measured under application of above barrier excitation for which the data are well reproduced by the developed model. Our analysis demonstrates a strong difference of the recharging dynamics for holes and electrons in quantum dots.

  14. What Quantum Dots Can Do for You

    NASA Astrophysics Data System (ADS)

    Salamo, Gregory

    2008-03-01

    Recent clever techniques for fabricating nanosize materials, one-atomic-layer-at-a-time, have simultaneously opened a door to a fantastic adventure at the frontier of physics, chemistry, biology, and engineering. Nanosize materials simply do not behave as the bulk. Indeed, the rules that govern the growth and behavior of these tiny structures are unexplored. In this talk we will discuss our recent efforts to be the architect of their shape, size, density, and position of nanostructures and along the way, the interactions between them that lead to their optical and electrical behavior. While self-assembly is providing exciting quantum dot (QD) structures to explore, like the QD molecules shown here, it is equally exciting to try to use the rules we uncover to encourage QD formation to take a desired path. Can we understand the formation of faceted nanostructures? Can we encourage or seed dot structures to form specific arrays? Is it possible to engineer greater homogeneity of dot shape and size? Can we design both the optical and electrical behavior of either individual or arrays of nanostructures to mimic those we find in nature? In this talk we will review our progress to answer these questions and discuss the possibilities and challenges ahead. For example, we will discuss the formation of individual faceted nanostructures as well as the fabrication of a vertically and laterally ordered QD stacks forming three-dimensional QD arrays. As another example, we will discuss the importance of surfaces with high Miller indices, as a template to the formation of nanostructures as well as their potential role in determining the shape and increased size uniformity of the confined structures. Importantly, these observations lead to an even more basic question of when and why high index surfaces are stable. Indeed, we have found that in order to understand the origin of high index surfaces that bound nanostructures we have to study them directly.

  15. PREFACE: Quantum dots as probes in biology

    NASA Astrophysics Data System (ADS)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  16. Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate

    NASA Astrophysics Data System (ADS)

    Lee, Hwack Joo; Ryu, Hyun; Leam, Jae Y.; Noh, Sam K.; Lee, Hyung G.; Nahm, Sahn

    1997-02-01

    Microstructural observations on 20 periods of InAs quantum dots on a GaAs substrate grown by molecular beam epitaxy system were carried out by using high resolution transmission electron microscopy. The spherical cap-shaped InAs quantum dots were formed in a self-organized fashion, dot over dot, along the growth direction. However, two types of anomalities were found in the growth of these superlattice structures. One is the stoppage of quantum dot formation after 4 or 5 layers have been deposited. The morphology of the quantum dots was rather flat and faceted and a black and white contrast layer has appeared in the dot structure. The other type was a volcano-like defect which was grown vertically along the growth direction with a size of about 120 nm in diameter and about 400 nm in spacing. Inside the defect, black and white contrast layers have been formed along the [110] direction at the bottom of the epilayer and then changed to the [111] direction as the growth continued to the top layer.

  17. Investigation of size dependent structural and optical properties of thin films of CdSe quantum dots

    SciTech Connect

    Sharma, Madhulika; Sharma, A.B.; Mishra, N.; Pandey, R.K.

    2011-03-15

    Research highlights: {yields} CdSe q-dots have been synthesized using simple chemical synthesis route. {yields} Thin film of CdSe quantum dots exhibited self-organized growth. {yields} Size dependent blue shift observed in the absorption edge of CdSe nanocrystallites. {yields} PL emission band corresponds to band edge luminescence and defect luminescence. {yields} Organized growth led to enhancement in luminescence yield of smaller size Q-dots. -- Abstract: Cadmium selenide (CdSe) quantum dots were grown on indium tin oxide substrate using wet chemical technique for possible application as light emitting devices. The structural, morphological and luminescence properties of the as deposited thin films of CdSe Q-dot have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. The quantum dots have been shown to deposit in an organized array on ITO/glass substrate. The as grown Q-dots exhibited size dependent blue shift in the absorption edge. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the nanocrystalline CdSe exhibits intense photoluminescence as compared to the large grained polycrystalline CdSe films.

  18. Optoelectronic Applications of Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wang, Zhiping; Zhang, Nanzhu; Brenneman, Kimber; Wu, Tsai Chin; Jung, Hyeson; Biswas, Sushmita; Sen, Banani; Reinhardt, Kitt; Liao, Sicheng; Stroscio, Michael A.; Dutta, Mitra

    This chapter highlights recent optoelectronic applications of colloidal quantum dots (QDs). In recent years, many colloidal QD-based optoelectronic devices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are discussed. Special emphasis is placed on new optoelectronic device concepts that incorporate DNA-based aptamers in biomolecule QD complexes. Not only are the extensions of traditional devices and concepts realizable, such as QD-based photo detectors, displays, photoluminescent and photovoltaic devices, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.

  19. Quantum dots as a possible oxygen sensor

    NASA Astrophysics Data System (ADS)

    Ziółczyk, Paulina; Kur-Kowalska, Katarzyna; Przybyt, Małgorzata; Miller, Ewa

    Results of studies on optical properties of low toxicity quantum dots (QDs) obtained from copper doped zinc sulfate are discussed in the paper. The effect of copper admixture concentration and solution pH on the fluorescence emission intensity of QDs was investigated. Quenching of QDs fluorescence by oxygen was reported and removal of the oxygen from the environment by two methods was described. In the chemical method oxygen was eliminated by adding sodium sulfite, in the other method oxygen was removed from the solution using nitrogen gas. For elimination of oxygen by purging the solution with nitrogen the increase of fluorescence intensity with decreasing oxygen concentration obeyed Stern-Volmer equation indicating quenching. For the chemical method Stern-Volmer equation was not fulfilled. The fluorescence decays lifetimes were determined and the increase of mean lifetimes at the absence of oxygen support hypothesis that QDs fluorescence is quenched by oxygen.

  20. Correlation energy of anisotropic quantum dots

    SciTech Connect

    Zhao Yan; Loos, Pierre-Francois; Gill, Peter M. W.

    2011-09-15

    We study the D-dimensional high-density correlation energy E{sub c} of the singlet ground state of two electrons confined by a harmonic potential with Coulombic repulsion. We allow the harmonic potential to be anisotropic and examine the behavior of E{sub c} as a function of the anisotropy {alpha}{sup -1}. In particular, we are interested in the limit where the anisotropy goes to infinity ({alpha}{yields}0) and the electrons are restricted to a lower-dimensional space. We show that tuning the value of {alpha} from 0 to 1 allows a smooth dimensional interpolation and we demonstrate that the usual model, in which a quantum dot is treated as a two-dimensional system, is inappropriate. Finally, we provide a simple function which reproduces the behavior of E{sub c} over the entire range of {alpha}.