Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods.

PubMed

Bano, N; Hussain, I; Sawaf, S; Alshammari, Abeer; Saleemi, F

2017-06-16

The size of ZnO nanorods (NRs) plays an important role in tuning the external quantum efficiency (EQE) and quality of light generated by white light emitting diodes (LEDs). In this work, we report on the enhancement of EQE and the quality of ZnO NR-based hetrojunction white LEDs fabricated on a p-GaN substrate using a low temperature solution method. Cathodoluminescence spectra demonstrate that ultraviolet (UV) emission decreases and visible deep band emission increases with an increase in the length of the ZnO NRs. The UV emission could be internally reabsorbed by the ZnO NR excitation, thus enhancing the emission intensity of the visible deep band. Photocurrent measurements validated the fact that the EQE depends on the size of ZnO NRs, increasing by 87% with an increase in the length of the ZnO NRs. Furthermore, the quality of white light was measured and clearly indicated an increase in the color rendering indices of the LEDs with an increase in the length of the ZnO NRs, confirming that the quality of light generated by LEDs can be tuned by varying the length of the ZnO NRs. These results suggest that the EQE and visible deep band emission from n-ZnONRs/p-GaN heterojunction LEDs can be effectively controlled by adjusting the length of the ZnO NRs, which can be useful for realizing tunable white LEDs.

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods

NASA Astrophysics Data System (ADS)

Bano, N.; Hussain, I.; Sawaf, S.; Alshammari, Abeer; Saleemi, F.

2017-06-01

The size of ZnO nanorods (NRs) plays an important role in tuning the external quantum efficiency (EQE) and quality of light generated by white light emitting diodes (LEDs). In this work, we report on the enhancement of EQE and the quality of ZnO NR-based hetrojunction white LEDs fabricated on a p-GaN substrate using a low temperature solution method. Cathodoluminescence spectra demonstrate that ultraviolet (UV) emission decreases and visible deep band emission increases with an increase in the length of the ZnO NRs. The UV emission could be internally reabsorbed by the ZnO NR excitation, thus enhancing the emission intensity of the visible deep band. Photocurrent measurements validated the fact that the EQE depends on the size of ZnO NRs, increasing by 87% with an increase in the length of the ZnO NRs. Furthermore, the quality of white light was measured and clearly indicated an increase in the color rendering indices of the LEDs with an increase in the length of the ZnO NRs, confirming that the quality of light generated by LEDs can be tuned by varying the length of the ZnO NRs. These results suggest that the EQE and visible deep band emission from n-ZnONRs/p-GaN heterojunction LEDs can be effectively controlled by adjusting the length of the ZnO NRs, which can be useful for realizing tunable white LEDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakane, Akihiro; Tamakoshi, Masato; Fujimoto, Shohei

2016-08-14

In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer ismore » then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu{sub 2}ZnSnSe{sub 4}, Cu{sub 2}ZnSnS{sub 4}, and Cu{sub 2}ZnSn(S,Se){sub 4}], zincblende CdTe solar cells, and hybrid perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells.« less

6.5% efficient perovskite quantum-dot-sensitized solar cell.

PubMed

Im, Jeong-Hyeok; Lee, Chang-Ryul; Lee, Jin-Wook; Park, Sang-Won; Park, Nam-Gyu

2011-10-05

Highly efficient quantum-dot-sensitized solar cell is fabricated using ca. 2-3 nm sized perovskite (CH(3)NH(3))PbI(3) nanocrystal. Spin-coating of the equimolar mixture of CH(3)NH(3)I and PbI(2) in γ-butyrolactone solution (perovskite precursor solution) leads to (CH(3)NH(3))PbI(3) quantum dots (QDs) on nanocrystalline TiO(2) surface. By electrochemical junction with iodide/iodine based redox electrolyte, perovskite QD-sensitized 3.6 μm-thick TiO(2) film shows maximum external quantum efficiency (EQE) of 78.6% at 530 nm and solar-to-electrical conversion efficiency of 6.54% at AM 1.5G 1 sun intensity (100 mW cm(-2)), which is by far the highest efficiency among the reported inorganic quantum dot sensitizers.

Cyclometalated Iridium(III) Carbene Phosphors for Highly Efficient Blue Organic Light-Emitting Diodes.

PubMed

Chen, Zhao; Wang, Liqi; Su, Sikai; Zheng, Xingyu; Zhu, Nianyong; Ho, Cheuk-Lam; Chen, Shuming; Wong, Wai-Yeung

2017-11-22

Five deep blue carbene-based iridium(III) phosphors were synthesized and characterized. Interestingly, one of them can be fabricated into deep blue, sky blue and white organic light-emitting diodes (OLEDs) through changing the host materials and exciton blocking layers. These deep and sky blue devices exhibit Commission Internationale de l'Éclairage (CIE) coordinates of (0.145, 0.186) and (0.152, 0.277) with external quantum efficiency (EQE) of 15.2% and 9.6%, respectively. The EQE of the deep blue device can be further improved up to 19.0% by choosing a host with suitable energy level of its lowest unoccupied molecular orbital (LUMO).

Room-Temperature Triple-Ligand Surface Engineering Synergistically Boosts Ink Stability, Recombination Dynamics, and Charge Injection toward EQE-11.6% Perovskite QLEDs.

PubMed

Song, Jizhong; Li, Jinhang; Xu, Leimeng; Li, Jianhai; Zhang, Fengjuan; Han, Boning; Shan, Qingsong; Zeng, Haibo

2018-06-10

Developing low-cost and high-quality quantum dots (QDs) or nanocrystals (NCs) and their corresponding efficient light-emitting diodes (LEDs) is crucial for the next-generation ultra-high-definition flexible displays. Here, there is a report on a room-temperature triple-ligand surface engineering strategy to play the synergistic role of short ligands of tetraoctylammonium bromide (TOAB), didodecyldimethylammonium bromide (DDAB), and octanoic acid (OTAc) toward "ideal" perovskite QDs with a high photoluminescence quantum yield (PLQY) of >90%, unity radiative decay in its intrinsic channel, stable ink characteristics, and effective charge injection and transportation in QD films, resulting in the highly efficient QD-based LEDs (QLEDs). Furthermore, the QD films with less nonradiative recombination centers exhibit improved PL properties with a PLQY of 61% through dopant engineering in A-site. The robustness of such properties is demonstrated by the fabrication of green electroluminescent LEDs based on CsPbBr 3 QDs with the peak external quantum efficiency (EQE) of 11.6%, and the corresponding peak internal quantum efficiency (IQE) and power efficiency are 52.2% and 44.65 lm W -1 , respectively, which are the most-efficient perovskite QLEDs with colloidal CsPbBr 3 QDs as emitters up to now. These results demonstrate that the as-obtained QD inks have a wide range application in future high-definition QD displays and high-quality lightings. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer as an Additive in the Emitting Layer for High-Performance Quantum Dot Light-Emitting Diodes.

PubMed

Liang, Feng; Liu, Yuan; Hu, Yun; Shi, Ying-Li; Liu, Yu-Qiang; Wang, Zhao-Kui; Wang, Xue-Dong; Sun, Bao-Quan; Liao, Liang-Sheng

2017-06-14

A facile but effective method is proposed to improve the performance of quantum dot light-emitting diodes (QLEDs) by incorporating a polymer, poly(9-vinlycarbazole) (PVK), as an additive into the CdSe/CdS/ZnS quantum dot (QD) emitting layer (EML). It is found that the charge balance of the device with the PVK-added EML was greatly improved. In addition, the film morphology of the hole-transporting layer (HTL) which is adjacent to the EML, is substantially improved. The surface roughness of the HTL is reduced from 5.87 to 1.38 nm, which promises a good contact between the HTL and the EML, resulting in low leakage current. With the improved charge balance and morphology, a maximum external quantum efficiency (EQE) of 16.8% corresponding to the current efficiency of 19.0 cd/A is achievable in the red QLEDs. The EQE is 1.6 times as high as that (10.5%) of the reference QLED, comprising a pure QD EML. This work demonstrates that incorporating some polymer molecules into the QD EML as additives could be a facile route toward high-performance QLEDs.

Triplet exciton confinement for enhanced fluorescent organic light-emitting diodes using a co-host system

NASA Astrophysics Data System (ADS)

Yoo, Han Kyu; Lee, Ho Won; Lee, Song Eun; Kim, Young Kwan; Kim, Se Hyun; Yoon, Seung Soo; Park, Jaehoon

2016-05-01

In this work, the co-host system within an emitting layer (EML) consists of the host and triplet managing (TM) host materials. A set of EML structures was fabricated with various concentrations of the TM host (0, 10, 30, 50, and 70%). The TM host triplet energy level is lower than the energy levels of the host and the guest, which leads to a reduction in the triplet exciton density and the singlet-triplet annihilation of the guest. Blue fluorescent organic light-emitting diodes exhibit a maximum luminous efficiency (LE) and an external quantum efficiency (EQE) of 9.74 cd/A and 4.92%, respectively. In addition, the efficiency roll-off ratios of the LE and the EQE are 14.25 and 13.16%, respectively.

Versatile Indolocarbazole-Isomer Derivatives as Highly Emissive Emitters and Ideal Hosts for Thermally Activated Delayed Fluorescent OLEDs with Alleviated Efficiency Roll-Off.

PubMed

Zhang, Dongdong; Song, Xiaozeng; Cai, Minghan; Kaji, Hironori; Duan, Lian

2018-02-01

Maintaining high efficiency at high brightness levels is an exigent challenge for real-world applications of thermally activated delayed fluorescent organic light-emitting diodes (TADF-OLEDs). Here, versatile indolocarbazole-isomer derivatives are developed as highly emissive emitters and ideal hosts for TADF-OLEDs to alleviate efficiency roll-off. It is observed that photophysical and electronic properties of these compounds can be well modulated by varying the indolocarbazole isomers. A photoluminescence quantum yield (η PL ) approaching unity and a maximum external quantum efficiency (EQE max ) of 25.1% are obtained for the emitter with indolo[3,2-a]carbazolyl subunit. Remarkably, record-high EQE/power efficiency of 26.2%/69.7 lm W -1 at the brightness level of 5000 cd m -2 with a voltage of only 3.74 V are also obtained using the same isomer as the host in a green TADF-OLED. It is evident that TADF hosts with high η PL values, fast reverse intersystem crossing processes, and balanced charge transport properties may open the path toward roll-off-free TADF-OLEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low roll-off and high efficiency orange OLEDs using green and red dopants in an exciplex forming co-host

NASA Astrophysics Data System (ADS)

Lee, Sunghun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Park, Young-Seo; Kim, Jang-Joo

2013-09-01

We present high efficiency orange emitting OLEDs with low driving voltage and low roll-off of efficiency using an exciplex forming co-host by (1) co-doping of green and red emitting phosphorescence dyes in the host and (2) red and green phosphorescent dyes doped in the host as separate red and green emitting layers. The orange OLEDs achieved a low turn-on voltage of 2.4 V and high external quantum efficiencies (EQE) of 25.0% and 22.8%, respectively. Moreover, the OLEDs showed low roll-off of efficiency with an EQE of over 21% and 19.6% at 10,000 cd/m2, respectively. The devices displayed good orange color with very little color shift with increasing luminance. The transient electroluminescence of the OLEDs indicated that both energy transfer and direct charge trapping took place in the devices.

Effects of Wavelength and Defect Density on the Efficiency of (In,Ga)N-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Pristovsek, Markus; Bao, An; Oliver, Rachel A.; Badcock, Tom; Ali, Muhammad; Shields, Andrew

2017-06-01

We measure the electroluminescence of light-emitting diodes (LEDs) on substrates with low dislocation densities (LDD) at 106 cm-2 and low 108 cm-2 , and compare them to LEDs on substrates with high dislocation densities (HDD) closer to 1010 cm-2 . The external quantum efficiencies (EQEs) are fitted using the A B C model with and without localization. The nonradiative-recombination (NR) coefficient A is constant for HDD LEDs, indicating that the NR is dominated by dislocations at all wavelengths. However, A strongly increases for LDD LEDs by a factor of 20 when increasing the emission wavelength from 440 to 540 nm. We attribute this to an increased density of point defects due to the lower growth temperatures used for longer wavelengths. The radiative recombination coefficient B follows the squared wave-function overlap for all samples. Using the observed coefficients, we calculate the peak efficiency as a function of the wavelength. For HDD LEDs the change of wave-function overlap (i.e., B ) is sufficient to reduce the EQE as observed, while for LDD LEDs also the NR coefficient A must increase to explain the observed EQEs. Thus, reducing NR is important to improving the EQEs of green LEDs, but this cannot be achieved solely by reducing the dislocation density: point defects must also be addressed.

Highly Efficient Red and White Organic Light-Emitting Diodes with External Quantum Efficiency beyond 20% by Employing Pyridylimidazole-Based Metallophosphors.

PubMed

Miao, Yanqin; Tao, Peng; Wang, Kexiang; Li, Hongxin; Zhao, Bo; Gao, Long; Wang, Hua; Xu, Bingshe; Zhao, Qiang

2017-11-01

Two highly efficient red neutral iridium(III) complexes, Ir1 and Ir2, were rationally designed and synthesized by selecting two pyridylimidazole derivatives as the ancillary ligands. Both Ir1 and Ir2 show nearly the same photoluminescence emission with the maximum peak at 595 nm (shoulder band at about 638 nm) and achieve high solution quantum yields of up to 0.47 for Ir1 and 0.57 for Ir2. Employing Ir1 and Ir2 as emitters, the fabricated red organic light-emitting diodes (OLEDs) show outstanding performance with the maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 20.98%, 33.04 cd/A, and 33.08 lm/W for the Ir1-based device and 22.15%, 36.89 cd/A, and 35.85 lm/W for the Ir2-based device, respectively. Furthermore, using Ir2 as red emitter, a trichromatic hybrid white OLED, showing good warm white emission with low correlated color temperature of <2200 K under the voltage of 4-6 V, was fabricated successfully. The white device also realizes excellent device efficiencies with the maximum EQE, CE, and PE reaching 22.74%, 44.77 cd/A, and 46.89 lm/W, respectively. Such high electroluminescence performance for red and white OLEDs indicates that Ir1 and Ir2 as efficient red phosphors have great potential for future OLED displays and lightings applications.

Unconventional Three-Armed Luminogens Exhibiting Both Aggregation-Induced Emission and Thermally Activated Delayed Fluorescence Resulting in High-Performing Solution-Processed Organic Light-Emitting Diodes.

PubMed

Park, Seo Yeon; Choi, Suna; Park, Gi Eun; Kim, Hyung Jong; Lee, Chiho; Moon, Ji Su; Kim, Si Woo; Park, Sungnam; Kwon, Jang Hyuk; Cho, Min Ju; Choi, Dong Hoon

2018-05-02

In this work, three-armed luminogens IAcTr-out and IAcTr-in were synthesized and used as emitters bearing triazine and indenoacridine moieties in thermally activated delayed fluorescence organic light-emitting diodes (OLEDs). These molecules could form a uniform thin film via the solution process and also allowed the subsequent deposition of an electron transporting layer either by vacuum deposition or by an all-solution coating method. Intriguingly, the new luminogens displayed aggregation-induced emission (AIE), which is a unique photophysical phenomenon. As a nondoped emitting layer (EML), IAcTr-in showed external quantum efficiencies (EQEs) of 11.8% for the hybrid-solution processed OLED and 10.9% for the all-solution processed OLED with a low efficiency roll-off. This was evident by the higher photoluminescence quantum yield and higher rate constant of reverse intersystem crossing of IAcTr-in, as compared to IAcTr-out. These AIE luminogens were used as dopants and mixed with the well-known host material 1,3-bis( N-carbazolyl)benzene (mCP) to produce a high-efficiency OLED with a two-component EML. The maximum EQE of 17.5% was obtained when using EML with IAcTr-out doping (25 wt %) into mCP, and the OLED with EML bearing IAcTr-in and mCP showed a higher maximum EQE of 18.4% as in the case of the nondoped EML-based device.

Enhancement of external quantum efficiency and reduction of roll-off in blue phosphorescent organic light emitt diodes using TCTA inter-layer

NASA Astrophysics Data System (ADS)

Kim, Ji Young; Kim, Nam Ho; Kim, Jin Wook; Kang, Jin Sung; Yoon, Ju-An; Yoo, Seung Il; Kim, Woo Young; Cheah, Kok Wai

2014-11-01

The improved external quantum efficiency (EQE) and reduced roll-off properties of blue phosphorescent organic light-emitting diodes (PHOLEDs), were fabricated with structure, ITO/NPB (400 Å)/TCTA (200 Å)/mCP:FIrpic (7%)(300 Å)/TPBi (300 Å)/Liq (20 Å)/Al (800 Å) by incorporating an 4,4‧,4‧‧-tris(carbazol-9-yl)-triphenylamine (TCTA) interlayer. We compared the properties of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) as the electron transport layer (ETL) with a typical structure of hole transport layer (HTL)/emissive layer (EML)/ETL in OLEDs and utilized inter-layer in the optimized structure to enhance EQE to 52% at 5.5 V, also stabilize the roll-off of 23%. The use of inter-layer in blue PHOLEDs exhibits a current efficiency of 10.04 cd/A, an EQE of 6.20% at 5.5 V and the highest luminance of 10310 cd/m2 at 9.5 V. We have identified the properties of electroluminescence through the inter-layer in blue PHOLEDs which can be divided into singlet excitons and triplet excitons which emit fluorescence of N,N‧-bis(1-naphthalenyl)-N,N‧-bis-phenyl-(1,1‧-biphenyl)-4,4‧-diamine (NPB) at 420 nm and phosphorescence of Iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2‧] picolinate (FIrpic) at 470 nm, 494 nm, respectively.

Low-Cost, High Efficiency, Silicon Based Photovoltaic Devices

DTIC Science & Technology

2015-08-27

for photovoltaic applications. Figure 14: (a) Absorption and scattering efficiencies versus sizes of Au nanoparticle at 550 nm, (b) scattering...efficiency as a function of wavelength for different Au nanoparticles sizes . 32 Review of plasmonics light trapping for photovoltaic application...ensure that the irradiation variation was within 3%. The external quantum efficiency (EQE) system used a 300W Xenon light source with a spot size of 1mm

Mitigating Structural Defects in Droop-Minimizing InGaN/GaN Quantum Well Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Chesin, Jordan; Singh, Akshay

2016-12-01

Modern commercial InGaN/GaN blue LEDs continue to suffer from efficiency droop, a reduction in efficiency with increasing drive current. External quantum efficiency (EQE) typically peaks at low drive currents (< 10 A cm 2) and drops monotonically at higher current densities, falling to <85% of the peak EQE at a drive current of 100 A cm 2. Mitigating droop-related losses will yield tremendous gains in both luminous efficacy (lumens/W) and cost (lumens/$). Such improvements are critical for continued large-scale market penetration of LED technologies, particularly in high-power and high flux per unit area applications. However, device structures that reduce droopmore » typically require higher indium content and are accompanied by a corresponding degradation in material quality which negates the droop improvement via enhanced Shockley-Read-Hall (SRH) recombination. In this work, we use advanced characterization techniques to identify and classify structural defects in InGaN/GaN quantum well (QW) heterostructures that share features with low-droop designs. Using aberration-corrected scanning transmission electron microscopy (C s-STEM), we find the presence of severe well width fluctuations (WWFs) in a number of low droop device architectures. However, the presence of WWFs does not correlate strongly with external quantum efficiency nor defect densities measured via deep level optical spectroscopy (DLOS). Hence, performance losses in the heterostructures of interest are likely dominated by nanoscale point or interfacial defects rather than large-scale extended defects.« less

Highly Efficient Deep Blue Organic Light-Emitting Diodes Based on Imidazole: Significantly Enhanced Performance by Effective Energy Transfer with Negligible Efficiency Roll-off.

PubMed

Shan, Tong; Liu, Yulong; Tang, Xiangyang; Bai, Qing; Gao, Yu; Gao, Zhao; Li, Jinyu; Deng, Jian; Yang, Bing; Lu, Ping; Ma, Yuguang

2016-10-26

Great efforts have been devoted to develop efficient deep blue organic light-emitting diodes (OLEDs) materials meeting the standards of European Broadcasting Union (EBU) standard with Commission International de L'Eclairage (CIE) coordinates of (0.15, 0.06) for flat-panel displays and solid-state lightings. However, high-performance deep blue OLEDs are still rare for applications. Herein, two efficient deep blue emitters, PIMNA and PyINA, are designed and synthesized by coupling naphthalene with phenanthreneimidazole and pyreneimidazole, respectively. The balanced ambipolar transporting natures of them are demonstrated by single-carrier devices. Their nondoped OLEDs show deep blue emissions with extremely small CIE y of 0.034 for PIMNA and 0.084 for PyINA, with negligible efficiency roll-off. To take advantage of high photoluminescence quantum efficiency of PIMNA and large fraction of singlet exciton formation of PyINA, doped devices are fabricated by dispersing PyINA into PIMNA. A significantly improved maximum external quantum efficiency (EQE) of 5.05% is obtained through very effective energy transfer with CIE coordinates of (0.156, 0.060), and the EQE remains 4.67% at 1000 cd m -2 , which is among the best of deep blue OLEDs reported matching stringent EBU standard well.

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization.

PubMed

Wang, Chu; Li, Xianglong; Pan, Yuyu; Zhang, Shitong; Yao, Liang; Bai, Qing; Li, Weijun; Lu, Ping; Yang, Bing; Su, Shijian; Ma, Yuguang

2016-02-10

Photoluminescence (PL) efficiency and exciton utilization efficiency are two key parameters to harvest high-efficiency electroluminescence (EL) in organic light-emitting diodes (OLEDs). But it is not easy to simultaneously combine these two characteristics (high PL efficiency and high exciton utilization) into a fluorescent material. In this work, an efficient combination was achieved through two concepts of hybridized local and charge-transfer (CT) state (HLCT) and "hot exciton", in which the former is responsible for high PL efficiency while the latter contributes to high exciton utilization. On the basis of a tiny chemical modification in TPA-BZP, a green-light donor-acceptor molecule, we designed and synthesized CzP-BZP with this efficeient combination of high PL efficiency of η(PL) = 75% in the solid state and maximal exciton utilization efficiency up to 48% (especially, the internal quantum efficiency of η(IQE) = 35% substantially exceed 25% of spin statistics limit) in OLED. The nondoped OLED of CzP-BZP exhibited an excellent performance: a green emission with a CIE coordinate of (0.34, 0.60), a maximum current efficiency of 23.99 cd A(-1), and a maximum external quantum efficiency (EQE, η(EQE)) of 6.95%. This combined HLCT state and "hot exciton" strategy should be a practical way to design next-generation, low-cost, high-efficiency fluorescent OLED materials.

Efficient OLEDs Fabricated by Solution Process Based on Carbazole and Thienopyrrolediones Derivatives.

PubMed

Lozano-Hernández, Luis-Abraham; Maldonado, José-Luis; Garcias-Morales, Cesar; Espinosa Roa, Arian; Barbosa-García, Oracio; Rodríguez, Mario; Pérez-Gutiérrez, Enrique

2018-01-30

Four low molecular weight compounds-three of them new, two of them with carbazole (Cz) as functional group and the other two with thienopyrroledione (TPD) group-were used as emitting materials in organic light emitting diodes (OLEDs). Devices were fabricated with the configuration ITO/PEDOT:PSS/emitting material/LiF/Al. The hole injector layer (HIL) and the emitting sheet were deposited by spin coating; LiF and Al were thermally evaporated. OLEDs based on carbazole derivatives show luminances up to 4130 cd/m², large current efficiencies about 20 cd/A and, cautiously, a very impressive External Quantum Efficiency (EQE) up to 9.5%, with electroluminescence peaks located around 490 nm (greenish blue region). Whereas, devices manufactured with TPD derivatives, present luminance up to 1729 cd/m², current efficiencies about 4.5 cd/A and EQE of 1.5%. These results are very competitive regarding previous reported materials/devices.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

NASA Astrophysics Data System (ADS)

Ecton, Jeremy Exton

Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases. In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated. Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a microcavity organic light emitting diode (MOLED), significant enhancement in the external quantum efficiency was achieved. The optimized MOLED structure achieved a light out-coupling enhancement of 1.35 compared to the non-cavity structure with a peak EQE of 34.2%. In addition to demonstrating a high light out-coupling enhancement, the microcavity effect of a narrow band emitter in a MOLED was elucidated.

Improved InGaN LED System Efficacy and Cost via Droop Reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wildeson, Isaac

Efficiency droop is a non-thermal process intrinsic to indium gallium nitride light emitting diodes (LEDs) in which the external quantum efficiency (EQE) decreases with increasing drive current density. Mitigating droop would allow one to reduce the size of LEDs driven at a given current or to drive LEDs of given size at higher current while maintaining high efficiencies. In other words, droop mitigation can lead to significant gains in light output per dollar and/or light output per watt of input power. This project set an EQE improvement goal at high drive current density which was to be attained by improvingmore » the LED active region design and growth process following a droop mitigation strategy. The interactions between LED active region design parameters and efficiency droop were studied by modeling and experiments. The crystal defects that tend to form in more complex LED designs intended to mitigate droop were studied with advanced characterization methods that provided insight into the structural and electronic properties of the material. This insight was applied to improve the epitaxy process both in terms of active region design and optimization of growth parameters. The final project goals were achieved on schedule and an epitaxy process leading to LEDs with EQE exceeding the project target was demonstrated.« less

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

PubMed

Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

2018-05-09

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

PubMed

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigations on the charge transfer mechanism at donor/acceptor interfaces in the quest for descriptors of organic solar cell performance.

PubMed

Muraoka, Azusa; Fujii, Mikiya; Mishima, Kenji; Matsunaga, Hiroki; Benten, Hiroaki; Ohkita, Hideo; Ito, Shinzaburo; Yamashita, Koichi

2018-05-07

Herein, we theoretically and experimentally investigated the mechanisms of charge separation processes of organic thin-film solar cells. PTB7, PTB1, and PTBF2 have been chosen as donors and PC 71 BM has been chosen as an acceptor considering that effective charge generation depends on the difference between the material combinations. Experimental results of transient absorption spectroscopy show that the hot process is a key step for determining external quantum efficiency (EQE) in these systems. From the quantum chemistry calculations, it has been found that EQE tends to increase as the transferred charge, charge transfer distance, and variation of dipole moments between the ground and excited states of the donor/acceptor complexes increase; this indicates that these physical quantities are a good descriptor to assess the donor-acceptor charge transfer quality contributing to the solar cell performance. We propose that designing donor/acceptor interfaces with large values of charge transfer distance and variation of dipole moments of the donor/acceptor complexes is a prerequisite for developing high-efficiency polymer/PCBM solar cells.

New iridium dopants forg white phosphorescent devices: enhancement of efficiency and color stability by an energy-harvesting layer.

PubMed

Chou, Ho-Hsiu; Li, Yi-Kai; Chen, Yu-Han; Chang, Ching-Chih; Liao, Chuang-Yi; Cheng, Chien-Hong

2013-07-10

A new light blue complex (fmoppy)2Ir(tfpypz) [bis(4'-fluoro-6'-methoxylphenyl pyridinato)-iridium(III)-3-(trifluoromethyl)-5-(pyridin-2-yl)-1,2,4-triazolate] and a new orange complex (dpiq)2Ir(acac) [bis(3,4-diphenylisoquinoline)-iridium(III)-acetylacetonate] were synthesized. These two complexes were used as the dopants for the fabrication of two-element white phosphorescent devices. Via the introduction of a thin energy-harvesting layer (EHL) to harvest the extra energy and exciton from the emission zone, highly efficient two-element white devices with excellent color stability were created. One of the best devices shows yellow-white color emission with an extremely high external quantum efficiency (EQE) of 21.5% and a current efficiency of 68.8 cd/A. The other device gave a pure white emission with an external quantum efficiency of 19.2% and a current efficiency of 53.2 cd/A. At a high brightness of 1000 cd/m(2), the EQE still remains as high as 18.9 and 17.2%. With a brightness of 1000-10000 cd/m(2), the CIE coordinates of these two devices shift by only (0.02, ≤0.01). The white phosphorescent devices with the EHL showed much higher efficiency and better color stability than the one without the EHL.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

PubMed

Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

2015-01-01

An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot LED with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21 % at a bias of 6 V and outstanding operational stability, with a L70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under amore » constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 quantum dots for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.« less

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

DOE PAGES

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; ...

2017-09-11

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot LED with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21 % at a bias of 6 V and outstanding operational stability, with a L70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under amore » constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 quantum dots for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.« less

Manipulation of Thermally Activated Delayed Fluorescence of Blue Exciplex Emission: Fully Utilizing Exciton Energy for Highly Efficient Organic Light Emitting Diodes with Low Roll-Off.

PubMed

Wang, Zixing; Wang, Hedan; Zhu, Jun; Wu, Peng; Shen, Bowen; Dou, Dehai; Wei, Bin

2017-06-28

The application of exciplex energy has become a unique way to achieve organic light-emitting diodes (OLEDs) with high efficiencies, low turn-on voltage, and low roll-off. Novel δ-carboline derivatives with high triplet energy (T 1 ≈ 2.92 eV) and high glass transition temperature (T g ≈ 153 °C) were employed to manipulate exciplex emissions in this paper. Deep blue (peak at 436 nm) and pure blue (peak at 468 nm) thermally activated delayed fluorescence (TADF) of exciplex OLEDs were demonstrated by utilizing them as emitters with the maximum current efficiency (CE) of 4.64 cd A -1 , power efficiency (PE) of 2.91 lm W -1 , and external quantum efficiency (EQE) of 2.36%. Highly efficient blue phosphorescent OLEDs doped with FIrpic showed a maximum CE of 55.6 cd A -1 , PE of 52.9 lm W -1 , and EQE of 24.6% respectively with very low turn on voltage at 2.7 V. The devices still remain high CE of 46.5 cd A -1 at 100 cd m -2 , 45.4 cd A -1 at 1000 cd m -2 and 42.3 cd A -1 at 5000 cd m -2 with EQE close to 20% indicating low roll-off. Manipulating blue exciplex emissions by chemical structure gives an ideal strategy to fully utilize all exciton energies for lighting of OLEDs.

De Novo Design of Boron-Based Host Materials for Highly Efficient Blue and White Phosphorescent OLEDs with Low Efficiency Roll-Off.

PubMed

Xue, Miao-Miao; Huang, Chen-Chao; Yuan, Yi; Cui, Lin-Song; Li, Yong-Xi; Wang, Bo; Jiang, Zuo-Quan; Fung, Man-Keung; Liao, Liang-Sheng

2016-08-10

Borane is an excellent electron-accepting species, and its derivatives have been widely used in a variety of fields. However, the use of borane derivatives as host materials in OLEDs has rarely reported because the device performance is generally not satisfactory. In this work, two novel spiro-bipolar hosts with incorporated borane were designed and synthesized. The strategies used in preparing these materials were to increase the spatial separation of the highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) in the molecules, tune the connecting positions of functional groups, and incorporate specific functional groups with desirable thermal stability. Based on these designs, phosphorescent OLEDs with borane derivatives as hosts and with outstanding device performances were obtained. In particular, devices based on SAF-3-DMB/FIrpic exhibited an external quantum efficiency (EQE) of >25%. More encouragingly, the device was found to have quite a low efficiency roll-off, giving an efficiency of >20% even at a high brightness of 10000 cd/m(2). Furthermore, the EQE of the three-color-based (R + G + B) white OLED employing SAF-3-DMB as a host was also as high as 22.9% with CIE coordinates of (x, y) = (0.40, 0.48). At a brightness of 5000 cd/m(2), there was only a 3% decrease in EQE from its maximum value, implying a very low efficiency roll-off.

Effects on external quantum efficiency of electrochemically constructed n-ZnO/p-Cu2O photovoltaic device by annealing

NASA Astrophysics Data System (ADS)

Khoo, Pei Loon; Kikkawa, Yuuki; Shinagawa, Tsutomu; Izaki, Masanobu

2017-07-01

Cuprous oxide (Cu2O), a terrestrial abundant, low cost, nontoxic, intrinsically p-type oxide semiconductor with bandgap energy of about 2eV, has recently received increasing attention as a light absorbing layer in solar cells. However, the performances of electrochemically constructed Cu2O solar devices are poor compared to the theoretical power conversion efficiency. This research was conducted focusing on the EQE performance, which is closely related to the short circuit current of a solar device. ZnO/Cu2O-PV-devices were constructed electrochemically with 3-electrode cell on Ga:ZnO/SLG substrates; ZnO layers were deposited from an aqueous solution of 8 mmolL-1 zinc nitrate hexahydrate at 63°C, 0.01 Coulomb cm-2, and -0.8V, while Cu2O layers were deposited from aqueous solution containing 0.4 molL-1 copper (II) acetate monohydrate (pH12.5), at 40°C, 1.5 Coulomb cm-2, and -0.4V. Devices were then annealed under different temperatures of 150°C, 200°C, 250°C, and 300°C for 60 minutes with a Rapid Thermal Anneal furnace (RTA). The EQE of the devices were measured with a spectral sensitivity device and compared to the non-annealed device. Further studies were made such as morphology observation of the films by FE-SEM and measurements of X-ray diffraction patterns. Annealed samples showed improved maximum EQE at 150-200°C of annealing, indicating that EQE above 90% can be achieved, proving the validity of EQE improvement via low temperature annealing method for thin film Cu2O photovoltaic devices.

Single-doped white organic light-emitting device with an external quantum efficiency over 20%.

PubMed

Fleetham, Tyler; Ecton, Jeremy; Wang, Zixing; Bakken, Nathan; Li, Jian

2013-05-14

A white OLED with a maximum EQE of 20.1%, CIE coordinates of (0.33, 0.33) and CRI of 80 is fabricated based on platinum(II) bis(N-methyl-imidazolyl)benzene chloride (Pt-16). The device emission spectrum and the chemical structure of Pt-16 are shown in the inset of the efficiency versus luminance graph. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

NASA Astrophysics Data System (ADS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-08-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Cool white light-emitting three stack OLED structures for AMOLED display applications.

PubMed

Springer, Ramon; Kang, Byoung Yeop; Lampande, Raju; Ahn, Dae Hyun; Lenk, Simone; Reineke, Sebastian; Kwon, Jang Hyuk

2016-11-28

This paper demonstrates 2-stack and 3-stack white organic light-emitting diodes (WOLEDs) with fluorescent blue and phosphorescent yellow emissive units. The 2-stack and 3-stack WOLED comprises blue-yellow and blue-blue-yellow (blue-yellow-blue) combinations. The position of the yellow emitter and possible cavity lengths in different stack architectures are theoretically and experimentally investigated to reach Commission Internationale de L'Eclairage (CIE) coordinates of near (0.333/0.333). Here, a maximum external quantum efficiency (EQE) of 23.6% and current efficiency of 62.2 cd/A at 1000 cd/m² as well as suitable CIE color coordinates of (0.335/0.313) for the blue-blue-yellow 3-stack hybrid WOLED structure is reported. In addition, the blue-yellow-blue 3-stack architecture exhibits an improved angular dependence compared to the blue-blue-yellow structure at a decreased EQE of 19.1%.

Efficient triplet application in exciplex delayed-fluorescence OLEDs using a reverse intersystem crossing mechanism based on a ΔES-T of around zero.

PubMed

Zhang, Tianyou; Chu, Bei; Li, Wenlian; Su, Zisheng; Peng, Qi Ming; Zhao, Bo; Luo, Yongshi; Jin, Fangming; Yan, Xingwu; Gao, Yuan; Wu, Hairuo; Zhang, Feng; Fan, Di; Wang, Junbo

2014-08-13

We demonstrate highly efficient exciplex delayed-fluorescence organic light-emitting diodes (OLEDs) in which 4,4',4″-tris[3-methylphenyl(phenyl)aminotriphenylamine (m-MTDATA) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were selected as donor and acceptor components, respectively. Our m-MTDATA:Bphen exciplex electroluminescence (EL) mechanism is based on reverse intersystem crossing (RISC) from the triplet to singlet excited states. As a result, an external quantum efficiency (EQE) of 7.79% at 10 mA/cm(2) was observed, which increases by 3.2 and 1.5 times over that reported in Nat. Photonics 2012, 6, 253 and Appl. Phys. Lett. 2012, 101, 023306, respectively. The high EQE would be attributed to a very easy RISC process because the energy difference between the singlet and triplet excited states is almost around zero. The verdict was proven by photoluminescence (PL) rate analysis at different temperatures and time-resolved spectral analysis. Besides, the study of the transient PL process indicates that the presence of an unbalanced charge in exciplex EL devices is responsible for the low EQE and high-efficiency roll-off. When the exciplex devices were placed in a 100 mT magnetic field, the permanently positive magnetoelectroluminescence and magnetoconductivity were observed. The magnetic properties confirm that the efficient exciplex EL only originates from delayed fluorescence via RISC processes but is not related to the triplet-triplet annihilation process.

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

Ultrafast endothermic transfer of non-radiative exciplex state to radiative excitons in polyfluorene random copolymer for blue electroluminescence

NASA Astrophysics Data System (ADS)

Moghe, Dhanashree A.; Dey, Amrita; Johnson, Kerr; Lu, L.-P.; Friend, Richard H.; Kabra, Dinesh

2018-04-01

We report a blue-emitting random copolymer (termed modified Aryl-F8) consisting of three repeat units of polydioctylfluorene (F8), Aryl-polydioctylfluorene (Aryl-F8), and an aromatic amine comonomer unit, poly(bis-N,Ν'-(4-butylphenyl)-bis-N,N'-phenyl-1,4 phenylenediamine) chemically linked to get an improved charge carrier balance without compromising on the photoluminescence (PL) quantum yield with respect to the Aryl-F8 homo-polymer. The measured photoluminescence quantum efficiency (˜70%) of the blue-emitting polymer is comparable to or greater than the individual monomer units. The time resolved PL spectra from the modified Aryl-F8 are similar to those of Arylated-poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4 phenylenediamine) (PFB) even at a time scale of 100-250 ps, indicating an ultrafast energy transfer from the (Aryl-F8 or F8):Arylated-PFB interface to Arylated-PFB, i.e., endothermic transfer of non-radiative exciplex to a radiative molecular exciton. Furthermore, the presence of non-radiative exciplex is confirmed by the photoluminescence decay profile and temperature dependent PL spectra. The luminance efficiency achieved for the modified Aryl-F8 polymer light-emitting diodes is ˜11 cd A-1 with an external quantum efficiency (EQE) of ˜4.5%, whereas it is 0.05 cd/A with an EQE of ˜0.025% for Aryl-F8. Almost two orders of higher efficiency is achieved due to the improved charge carrier balance from the random copolymer without compromising on the photoluminescence yield.

High power blue laser diodes on semipolar (202¯1¯) GaN substrates

NASA Astrophysics Data System (ADS)

Pourhashemi, Seyed Arash

High power blue laser didoes (LDs), among other applications, show the promise of realizing efficient and reliable solid state lighting systems. Since first GaN optoelectronic devices were demonstrated in early 1990s, GaN LDs were traditionally fabricated on polar c-plane. However in recent years there has been a growing interest in nonpolar and semipolar planes. Nonpolar and semipolar devices offer the prospect of achieving higher efficiencies though elimination or reduction of polarization-related electric fields. In this project I investigated semipolar (202 ¯1 ¯) plane of GaN for blue LDs fabrication. Results include blue LD (Lambda=450 nm) with highest output power, differential quantum efficiency (?d) and external quantum efficiency (EQE) reported for a GaN LD on a semipolar plane to date. Output power of 2.52 W, etad=50% and EQE=39% were achieved in pulsed mode and output power of 1.71 W was achieved in true CW mode. Moreover, use of indium tin oxide (ITO) as cladding layer in order to reduce the thickness of Mg-doped p-GaN layer was investigated. Blue LDs with ITO cladding were demonstrated in this work with highest output power, etad and EQE reported for a GaN LD with transparent conducting oxide (TCO) cladding layer to date. The lack of any natural cleavage plane orthogonal to the in-plane projection of the c-axis on semipolar planes has made Cl2-based dry etch processes the most common way to form mirror facets for semipolar LDs. However, mirror facets fabricated by dry etching can be inclined or rough. For this work, mechanical polishing was used to form LD mirror facets. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high power CW semipolar LDs.

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

PubMed

Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

FDTD analysis of the light extraction efficiency of OLEDs with a random scattering layer.

PubMed

Kim, Jun-Whee; Jang, Ji-Hyang; Oh, Min-Cheol; Shin, Jin-Wook; Cho, Doo-Hee; Moon, Jae-Hyun; Lee, Jeong-Ik

2014-01-13

The light extraction efficiency of OLEDs with a nano-sized random scattering layer (RSL-OLEDs) was analyzed using the Finite Difference Time Domain (FDTD) method. In contrast to periodic diffraction patterns, the presence of an RSL suppresses the spectral shift with respect to the viewing angle. For FDTD simulation of RSL-OLEDs, a planar light source with a certain spatial and temporal coherence was incorporated, and the light extraction efficiency with respect to the fill factor of the RSL and the absorption coefficient of the material was investigated. The design results were compared to the experimental results of the RSL-OLEDs in order to confirm the usefulness of FDTD in predicting experimental results. According to our FDTD simulations, the light confined within the ITO-organic waveguide was quickly absorbed, and the absorption coefficients of ITO and RSL materials should be reduced in order to obtain significant improvement in the external quantum efficiency (EQE). When the extinction coefficient of ITO was 0.01, the EQE in the RSL-OLED was simulated to be enhanced by a factor of 1.8.

Increased short circuit current in an azafullerene-based organic solar cell.

PubMed

Cambarau, Werther; Fritze, Urs F; Viterisi, Aurélien; Palomares, Emilio; von Delius, Max

2015-01-21

We report the synthesis of a solution-processable, dodecyloxyphenyl-substituted azafullerene monoadduct (DPC59N) and its application as electron acceptor in bulk heterojunction organic solar cells (BHJ-OSCs). Due to its relatively strong absorption of visible light, DPC59N outperforms PC60BM in respect to short circuit current (JSC) and external quantum efficiency (EQE) in blends with donor P3HT.

High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

PubMed

Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

2014-09-03

Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Wrapping cytochrome c around single-wall carbon nanotube: engineered nanohybrid building blocks for infrared detection at high quantum efficiency

PubMed Central

Gong, Youpin; Liu, Qingfeng; Wilt, Jamie Samantha; Gong, Maogang; Ren, Shenqiang; Wu, Judy

2015-01-01

Biomolecule cytochrome c (Cty c), a small molecule of a chain of amino acids with extraordinary electron transport, was helically wrapped around a semiconductive single-wall carbon nanotube (s-SWCNT) to form a molecular building block for uncooled infrared detection with two uniquely designed functionalities: exciton dissociation to free charge carriers at the heterojunction formed on the s-SWCNT/Cty c interface and charge transport along the electron conducting chain of Cty c (acceptor) and hole conducting channel through s-SWCNT (donor). Such a design aims at addressing the long-standing challenges in exciton dissociation and charge transport in an SWCNT network, which have bottlenecked development of photonic SWCNT-based infrared detectors. Using these building blocks, uncooled s-SWCNT/Cyt c thin film infrared detectors were synthesized and shown to have extraordinary photoresponsivity up to 0.77 A W−1 due to a high external quantum efficiency (EQE) in exceeding 90%, which represents a more than two orders of magnitude enhancement than the best previously reported on CNT-based infrared detectors with EQE of only 1.72%. From a broad perspective, this work on novel s-SWCNT/Cyt c nanohybrid infrared detectors has developed a successful platform of engineered carbon nanotube/biomolecule building blocks with superior properties for optoelectronic applications. PMID:26066737

Wrapping cytochrome c around single-wall carbon nanotube: engineered nanohybrid building blocks for infrared detection at high quantum efficiency.

PubMed

Gong, Youpin; Liu, Qingfeng; Wilt, Jamie Samantha; Gong, Maogang; Ren, Shenqiang; Wu, Judy

2015-06-11

Biomolecule cytochrome c (Cty c), a small molecule of a chain of amino acids with extraordinary electron transport, was helically wrapped around a semiconductive single-wall carbon nanotube (s-SWCNT) to form a molecular building block for uncooled infrared detection with two uniquely designed functionalities: exciton dissociation to free charge carriers at the heterojunction formed on the s-SWCNT/Cty c interface and charge transport along the electron conducting chain of Cty c (acceptor) and hole conducting channel through s-SWCNT (donor). Such a design aims at addressing the long-standing challenges in exciton dissociation and charge transport in an SWCNT network, which have bottlenecked development of photonic SWCNT-based infrared detectors. Using these building blocks, uncooled s-SWCNT/Cyt c thin film infrared detectors were synthesized and shown to have extraordinary photoresponsivity up to 0.77 A W(-1) due to a high external quantum efficiency (EQE) in exceeding 90%, which represents a more than two orders of magnitude enhancement than the best previously reported on CNT-based infrared detectors with EQE of only 1.72%. From a broad perspective, this work on novel s-SWCNT/Cyt c nanohybrid infrared detectors has developed a successful platform of engineered carbon nanotube/biomolecule building blocks with superior properties for optoelectronic applications.

Effect of thermal annealing Super Yellow emissive layer on efficiency of OLEDs

PubMed Central

Burns, Samantha; MacLeod, Jennifer; Trang Do, Thu; Sonar, Prashant; Yambem, Soniya D.

2017-01-01

Thermal annealing of the emissive layer of an organic light emitting diode (OLED) is a common practice for solution processable emissive layers and reported annealing temperatures varies across a wide range of temperatures. We have investigated the influence of thermal annealing of the emissive layer at different temperatures on the performance of OLEDs. Solution processed polymer Super Yellow emissive layers were annealed at different temperatures and their performances were compared against OLEDs with a non-annealed emissive layer. We found a significant difference in the efficiency of OLEDs with different annealing temperatures. The external quantum efficiency (EQE) reached a maximum of 4.09% with the emissive layer annealed at 50 °C. The EQE dropped by ~35% (to 2.72%) for OLEDs with the emissive layers annealed at 200 °C. The observed performances of OLEDs were found to be closely related to thermal properties of polymer Super Yellow. The results reported here provide an important guideline for processing emissive layers and are significant for OLED and other organic electronics research communities. PMID:28106082

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

High Efficiency Near-Infrared and Semitransparent Non-Fullerene Acceptor Organic Photovoltaic Cells.

PubMed

Li, Yongxi; Lin, Jiu-Dong; Che, Xiaozhou; Qu, Yue; Liu, Feng; Liao, Liang-Sheng; Forrest, Stephen R

2017-11-29

The absence of near-infrared (NIR) solar cells with high open circuit voltage (V oc ) and external quantum efficiency (EQE) has impeded progress toward achieving organic photovoltaic (OPV) power conversion efficiency PCE > 15%. Here we report a small energy gap (1.3 eV), chlorinated nonfullerene acceptor-based solar cell with PCE = 11.2 ± 0.4%, short circuit current of 22.5 ± 0.6 mA cm -2 , V oc = 0.70 ± 0.01 V and fill factor of 0.71 ± 0.02, which is the highest performance reported to date for NIR single junction OPVs. Importantly, the EQE of this NIR solar cell reaches 75%, between 650 and 850 nm while leaving a transparency window between 400 and 600 nm. The semitransparent OPV using an ultrathin (10 nm) Ag cathode shows PCE = 7.1 ± 0.1%, with an average visible transmittance of 43 ± 2%, Commission d'Eclairage chromaticity coordinates of (0.29, 0.32) and a color rendering index of 91 for simulated AM1.5 illumination transmitted through the cell.

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Singh, Akshay; Chesin, Jordan

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL)more » response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.« less

Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yue, E-mail: yuelin@fjirsm.ac.cn; Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002; Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian 361005

2014-01-14

We perform both spatially resolved electroluminescence (SREL) as a function of injection current and spatially resolved photoluminescence (SRPL) as a function of excitation power on InGaN quantum well blue light-emitting diodes to investigate the underlying physics for the phenomenon of the external quantum efficiency (EQE) droop. SREL allows us to study two most commonly observed but distinctly different droop behaviors on a single device, minimizing the ambiguity trying to compare independently fabricated devices. Two representative devices are studied: one with macroscopic scale material non-uniformity, the other being macroscopically uniform, but both with microscopic scale fluctuations. We suggest that the EQE–currentmore » curve reflects the interplay of three effects: nonradiative recombination through point defects, carrier localization due to either In composition or well width fluctuation, and nonradiative recombination of the extended defects, which is common to various optoelectronic devices. By comparing SREL and SRPL, two very different excitation/detection modes, we show that individual singular sites exhibiting either particularly strong or weak emission in SRPL do not usually play any significant and direct role in the EQE droop. We introduce a two-level model that can capture the basic physical processes that dictate the EQE–current dependence and describe the whole operating range of the device from 0.01 to 100 A/cm{sup 2}.« less

Emission efficiency limit of Si nanocrystals

PubMed Central

Limpens, Rens; Luxembourg, Stefan L.; Weeber, Arthur W.; Gregorkiewicz, Tom

2016-01-01

One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 1012 cm12, which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible. PMID:26786062

Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

PubMed

Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

2016-02-01

A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

NASA Astrophysics Data System (ADS)

Walde, S.; Brendel, M.; Zeimer, U.; Brunner, F.; Hagedorn, S.; Weyers, M.

2018-04-01

The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface as hexagonal prisms. They work as electrically active paths bypassing the Al0.5Ga0.5N absorber layer and therefore alter the behavior of the MSM PDs under bias voltage. This effect is included in the model of carrier collection in the MSM PDs showing a good agreement with the experimental data. While such dislocations usually limit the device performance, the MSM PDs benefit by high EQE at a reduced bias voltage while maintaining a low dark current.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

PubMed

Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-02-25

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

High sensitivity background absorption measurements in semiconductors

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Silva, Junior R.; Wang, Chengao; Albrecht, Alexander R.; Melgaard, Seth D.; Sheik-Bahae, Mansoor

2015-03-01

Laser cooling in InGaP|GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP|GaAs DHS as well as GaAs|AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

NASA Astrophysics Data System (ADS)

Sahoo, G. S.; Mishra, G. P.

2018-01-01

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III-V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (JSC), open-circuit voltage (VOC), fill factor (FF) and conversion efficiency (η) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

Optical Refrigeration to 119 K, below National Institute of Standards and Technology Cryogenic Temperature

DTIC Science & Technology

2013-05-01

I . Epstein, and S. Kurtz, Proc. SPIE 6115, 215 (2006). 18. C. Hoyt, M. Hasselbeck, M. Sheik- Bahae , R. Epstein, S. Greenfield, J. Thiede, J. Distel...achieve cooling are ( i ) high external quantum efficiency (EQE) transition in the dopant ion and (ii) high purity of the host material. Ignor- ing...1929). 2. R. Epstein, M. Buchwald, B. Edwards, T. Gosnell, and C. E. Mungan, Nature 377, 500 (1995). 3. M. Sheik- Bahae and R. Epstein, Nat. Photonics

Hybrid photodetector based on CsPbBr3 perovskite nanocrystals and PC71BM fullerene derivative

NASA Astrophysics Data System (ADS)

Li, Tengteng; Liu, Meihong; Li, Qingyan; Chen, Run; Liu, Xin

2018-05-01

Here, a hybrid perovskite-organic photodetector was fabricated by integrating CsPbBr3 nanocrystals (NCs) with [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), exhibiting remarkable optoelectronic properties in terms of photoresponsivity (1.72 A/W), detectivity (1.76 × 107 Jones), external quantum efficiency (EQE) (530%) under the illumination of 405 nm laser, and photoresponse time is shorter than 0.1 ms due to the assistance of heterojunction on the separation of photoexcitons.

Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers.

PubMed

Fu, Yan; Jiang, Wei; Kim, Daekyoung; Lee, Woosuk; Chae, Heeyeop

2018-05-23

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m -2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.

Innovatively Continuous Mass Production Couette-taylor Flow: Pure Inorganic Green-Emitting Cs4PbBr6 Perovskite Microcrystal for display technology.

PubMed

Song, Young Hyun; Choi, Seung Hee; Park, Won Kyu; Yoo, Jin Sun; Kwon, Seok Bin; Kang, Bong Kyun; Park, Sang Ryul; Seo, Young Soo; Yang, Woo Seok; Yoon, Dae Ho

2018-01-31

We report for the first time the mass production of Cs 4 PbBr 6 perovskite microcrystal with a Couette-Taylor flow reactor in order to enhance the efficiency of the synthesis reaction. We obtained a pure Cs 4 PbBr 6 perovskite solid within 3 hrs that then realized a high photoluminescence quantum yield (PLQY) of 46%. Furthermore, the Cs 4 PbBr 6 perovskite microcrystal is applied with red emitting K 2 SiF 6 phosphor on a blue-emitting InGaN chip, achieving a high-performance luminescence characteristics of 9.79 lm/W, external quantum efficiency (EQE) of 2.9%, and correlated color temperature (CCT) of 2976 K; therefore, this perovskite is expected to be a promising candidate material for applications in optoelectronic devices.

Trap-assisted large gain in Cu{sub 2}O/C{sub 60} hybrid ultraviolet/visible photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lan; Xi, Qiaoyue; Gao, Ge

2016-04-18

Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu{sub 2}O/C{sub 60} hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10{sup 4}% under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu{sub 2}O and C{sub 60} are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu{sub 2}O layers, which can trap photogenerated holes. Such trapped holesmore » will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C{sub 60} primarily acts as a light absorption media to provide free holes.« less

BaY2F8 doped with Er3+: An upconverter material for photovoltaic application

NASA Astrophysics Data System (ADS)

Boccolini, A.; Faoro, R.; Favilla, E.; Veronesi, S.; Tonelli, M.

2013-08-01

Fluoride crystals (BaY2F8) doped with Er3+ ions with different doping level have been grown with a home-made Czochralski furnace. A spectroscopic characterization consisting in both absorption and fluorescence measurements were performed in order to investigate the upconversion mechanism occurring when the material is excited with a radiation at 1557 nm. The measured emission spectrum shows a photoluminescence mainly distributed in the Near Infrared (NIR) region at ≃1 μm. The spectral conversion due to the upconversion makes this material suitable for photovoltaic applications, especially if we combine it with a crystalline silicon solar cell. A device made of single face solar cell+upconverter material (PV-UC) was designed and his external quantum efficiency (EQE) at 1557 nm was measured. EQE values of 6.5% and 4.1% were reached under 8.5 W cm-2 power density illumination for the 30%Er3+ and 20%Er3+ samples, respectively.

Nanoparticle-assisted high photoconductive gain in polymer/fullerene matrix

PubMed Central

Chen, Hsiang-Yu; Lo, Michael K. F.; Yang, Guanwen; Monbouquette, Harold G.; Yang, Yang

2014-01-01

Polymer/inorganic nanocrystal composites1–10 offer an attractive means to combine the merits of organic and inorganic materials into novel electronic and photonic systems. However, many applications of these composites are limited by the solubility11 and distribution of nanocrystals (NCs) in polymer matrices. Here, a high photoconductive gain has been achieved by blending cadmium telluride (CdTe) nanoparticles (NPs) into a polymer/fullerene matrix followed by a solvent annealing12 process. The NP surface capping ligand, N-phenyl-N’-methyldithiocarbamate, renders the NPs highly soluble in the polymer blend thereby enabling high nanocrystal loadings. An external quantum efficiency (EQE) as high as ~8000% (at 350nm) is reached at −4.5V. Hole-dominant devices coupled with AFM images are studied to uncover the probable mechanism. We observe a higher concentration of CdTe NPs is located near the cathode/polymer interface. These NPs with trapped electrons assist hole injection into the polymer under reverse bias, which contributes to greater than 100% EQE. PMID:18772915

The effect of a charge control layer on the electroluminescent characteristic of blue and white organic light-emitting diodes.

PubMed

Lee, Dong Hyung; Lee, Seok Jae; Koo, Ja-Ryong; Lee, Ho Won; Shin, Hyun Su; Lee, Song Eun; Kim, Woo Young; Lee, Kum Hee; Yoon, Seung Soo; Kim, Young Kwan

2014-08-01

We investigated blue fluorescent organic light-emitting diode (OLED) with a charge control layer (CCL) to produce high efficiency and improve the half-decay lifetime. Three types of devices (device A, B, and C) were fabricated following the number of CCLs within the emitting layer (EML), maintaining the thickness of whole EML. The CCL and host material, 2-methyl-9,10-di(2-naphthyl)anthracene, which has a bipolar property, was able to control the carrier movement with ease inside the EML. Device B demonstrated a maximum luminous efficiency (LE) and external quantum efficiency (EQE) of 9.19 cd/A and 5.78%, respectively. It also showed that the enhancement of the half-decay lifetime, measured at an initial luminance of 1,000 cd/m2, was 1.5 times longer than that of the conventional structure. A hybrid white OLED (WOLED) was also fabricated using a phosphorescent red emitter, bis(2-phenylquinoline)-acetylacetonate iridium III doped in 4,4'-N,N'-dicarbazolyl-biphenyl. The property of the hybrid WOLED with CCL showed a maximum LE and an EQE of 13.46 cd/A and 8.32%, respectively. It also showed white emission with Commission International de L'Éclairage coordinates of (x = 0.41, y = 0.33) at 10 V.

Solution processible MoOx-incorporated graphene anode for efficient polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Dongchan; Kim, Donghyuk; Lee, Yonghee; Jeon, Duk Young

2017-06-01

Graphene has attracted great attention owing to its superb properties as an anode of organic or polymer light-emitting diodes (OLEDs or PLEDs). However, there are still barriers for graphene to replace existing indium tin oxide (ITO) due to relatively high sheet resistance and work function mismatch. In this study, PLEDs using molybdenum oxide (MoOx) nanoparticle-doped graphene are demonstrated on a plastic substrate to have a low sheet resistance and high work function. Also, this work shows how the doping amount influences the electronic properties of the graphene anode and the PLED performance. A facile and scalable spin coating process was used for doping graphene with MoOx. After doping, the sheet resistance and the optical transmittance of five-layer graphene were ˜180 Ω sq-1 and ˜88%, respectively. Moreover, the surface roughness of MoOx-doped graphene becomes smoother than that of pristine graphene. Furthermore, a nonlinear relationship was observed between the MoOx doping level and device performance. Therefore, a modified stacking structure of graphene electrode is presented to further enhance device performance. The maximum external quantum efficiency (EQE) and power efficiency of the PLED using the MoOx-doped graphene anode were 4.7% and 13.3 lm W-1, respectively. The MoOx-doped graphene anode showed enhanced device performance (261% for maximum EQE, 255% for maximum power efficiency) compared with the pristine graphene.

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutchinson, David; Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996; Mathews, Jay

2016-05-15

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measuredmore » concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.« less

Highly Efficient Simplified Single-Emitting-Layer Hybrid WOLEDs with Low Roll-off and Good Color Stability through Enhanced Förster Energy Transfer.

PubMed

Zhang, Dongdong; Cai, Minghan; Zhang, Yunge; Zhang, Deqiang; Duan, Lian

2015-12-30

Single-emitting layer hybrid white organic light-emitting diodes (SEL-hybrid-WOLEDs) usually suffer from low efficiency, significant roll-off, and poor color stability, attributed to the incomplete energy transfer from the triplet states of the blue fluorophores to the phosphors. Here, we demonstrate highly efficient SEL-hybrid-WOLEDs with low roll-off and good color-stability utilizing blue thermally activated delayed fluorescence (TADF) materials as the host emitters. The triplet states of the blue TADF host emitter can be up-converted into its singlet states, and then the energy is transferred to the complementary phosphors through the long-range Förster energy transfer, enhancing the energy transfer from the host to the dopant. Simplified SEL-hybrid-WOLEDs achieve the highest forward-viewing external quantum efficiency (EQE) of 20.8% and power efficiency of 51.2 lm/W with CIE coordinates of (0.398, 0.456) at a luminance of 500 cd/m(2). The device EQE only slightly drops to 19.6% at a practical luminance of 1000 cd/m(2) with a power efficiency of 38.7 lm/W. Furthermore, the spectra of the device are rather stable with the raising voltage. The reason can be assigned to the enhanced Förster energy transfer, wide charge recombination zone, as well as the bipolar charge transporting ability of the host emitter. We believe that our work may shed light on the future development of highly efficient SEL-hybrid-WOLEDs with simultaneous low roll-off and good color stability.

One-Pot Large-Scale Synthesis of Carbon Quantum Dots: Efficient Cathode Interlayers for Polymer Solar Cells.

PubMed

Yang, Yuzhao; Lin, Xiaofeng; Li, Wenlang; Ou, Jiemei; Yuan, Zhongke; Xie, Fangyan; Hong, Wei; Yu, Dingshan; Ma, Yuguang; Chi, Zhenguo; Chen, Xudong

2017-05-03

Cathode interlayers (CILs) with low-cost, low-toxicity, and excellent cathode modification ability are necessary for the large-scale industrialization of polymer solar cells (PSCs). In this contribution, we demonstrated one-pot synthesized carbon quantum dots (C-dots) with high production to serve as efficient CIL for inverted PSCs. The C-dots were synthesized by a facile, economical microwave pyrolysis in a household microwave oven within 7 min. Ultraviolet photoelectron spectroscopy (UPS) studies showed that the C-dots possessed the ability to form a dipole at the interface, resulting in the decrease of the work function (WF) of cathode. External quantum efficiency (EQE) measurements and 2D excitation-emission topographical maps revealed that the C-dots down-shifted the high energy near-ultraviolet light to low energy visible light to generate more photocurrent. Remarkably improvement of power conversion efficiency (PCE) was attained by incorporation of C-dots as CIL. The PCE was boosted up from 4.14% to 8.13% with C-dots as CIL, which is one of the best efficiency for i-PSCs used carbon based materials as interlayers. These results demonstrated that C-dots can be a potential candidate for future low cost and large area PSCs producing.

Luminescent zinc(ii) and copper(i) complexes for high-performance solution-processed monochromic and white organic light-emitting devices.

PubMed

Cheng, Gang; So, Gary Kwok-Ming; To, Wai-Pong; Chen, Yong; Kwok, Chi-Chung; Ma, Chensheng; Guan, Xiangguo; Chang, Xiaoyong; Kwok, Wai-Ming; Che, Chi-Ming

2015-08-01

The synthesis and spectroscopic properties of luminescent tetranuclear zinc(ii) complexes of substituted 7-azaindoles and a series of luminescent copper(i) complexes containing 7,8-bis(diphenylphosphino)-7,8-dicarba- nido -undecaborate ligand are described. These complexes are stable towards air and moisture. Thin film samples of the luminescent copper(i) complexes in 2,6-dicarbazolo-1,5-pyridine and zinc(ii) complexes in poly(methyl methacrylate) showed emission quantum yields of up to 0.60 (for Cu-3 ) and 0.96 (for Zn-1 ), respectively. Their photophysical properties were examined by ultrafast time-resolved emission spectroscopy, temperature dependent emission lifetime measurements and density functional theory calculations. Monochromic blue and orange solution-processed OLEDs with these Zn(ii) and Cu(i) complexes as light-emitting dopants have been fabricated, respectively. Maximum external quantum efficiency (EQE) of 5.55% and Commission Internationale de l'Eclairage (CIE) coordinates of (0.16, 0.19) were accomplished with the optimized Zn-1 -OLED while these values were, respectively 15.64% and (0.48, 0.51) for the optimized Cu-3 -OLED. Solution-processed white OLEDs having maximum EQE of 6.88%, CIE coordinates of (0.42, 0.44), and colour rendering index of 81 were fabricated by using these luminescent Zn(ii) and Cu(i) complexes as blue and orange light-emitting dopant materials, respectively.

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Practical considerations for solar energy thermally enhanced photo-luminescence (TEPL) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kruger, Nimrod; Manor, Assaf; Kurtulik, Matej; Sabapathy, Tamilarasan; Rotschild, Carmel

2017-04-01

While single-junction photovoltaics (PV's) are considered limited in conversion efficiency according to the Shockley-Queisser limit, concepts such as solar thermo-photovoltaics aim to harness lost heat and overcome this barrier. We claim the novel concept of Thermally Enhanced Photoluminescence (TEPL) as an easier route to achieve this goal. Here we present a practical TEPL device where a thermally insulated photo-luminescent (PL) absorber, acts as a mediator between a photovoltaic cell and the sun. This high temperature absorber emits blue-shifted PL at constant flux, then coupled to a high band gap PV cell. This scheme promotes PV conversion efficiencies, under ideal conditions, higher than 62% at temperatures lower than 1300K. Moreover, for a PV and absorber band-gaps of 1.45eV (GaAs PV's) and 1.1eV respectively, under practical conditions, solar concentration of 1000 suns, and moderate thermal insulation; the conversion efficiencies potentially exceed 46%. Some of these practical conditions belong to the realm of optical design; including high photon recycling (PR) and absorber external quantum efficiency (EQE). High EQE values, a product of the internal QE of the active PL materials and the extraction efficiency of each photon (determined by the absorber geometry and interfaces), have successfully been reached by experts in laser cooling technology. PR is the part of emitted low energy photons (in relation to the PV band-gap) that are reabsorbed and consequently reemitted with above band-gap energies. PV back-reflector reflectivity, also successfully achieved by those who design the cutting edge high efficiency PV cells, plays a major role here.

High-efficiency/CRI/color stability warm white organic light-emitting diodes by incorporating ultrathin phosphorescence layers in a blue fluorescence layer

NASA Astrophysics Data System (ADS)

Miao, Yanqin; Wang, Kexiang; Zhao, Bo; Gao, Long; Tao, Peng; Liu, Xuguang; Hao, Yuying; Wang, Hua; Xu, Bingshe; Zhu, Furong

2018-01-01

By incorporating ultrathin (<0.1 nm) green, yellow, and red phosphorescence layers with different sequence arrangements in a blue fluorescence layer, four unique and simplified fluorescence/phosphorescence (F/P) hybrid, white organic light-emitting diodes (WOLEDs) were obtained. All four devices realize good warm white light emission, with high color rending index (CRI) of >80, low correlated color temperature of <3600 K, and high color stability at a wide voltage range of 5 V-9 V. These hybrid WOLEDs also reveal high forward-viewing external quantum efficiencies (EQE) of 17.82%-19.34%, which are close to the theoretical value of 20%, indicating an almost complete exciton harvesting. In addition, the electroluminescence spectra of the hybrid WOLEDs can be easily improved by only changing the incorporating sequence of the ultrathin phosphorescence layers without device efficiency loss. For example, the hybrid WOLED with an incorporation sequence of ultrathin red/yellow/green phosphorescence layers exhibits an ultra-high CRI of 96 and a high EQE of 19.34%. To the best of our knowledge, this is the first WOLED with good tradeoff among device efficiency, CRI, and color stability. The introduction of ultrathin (<0.1 nm) phosphorescence layers can also greatly reduce the consumption of phosphorescent emitters as well as simplify device structures and fabrication process, thus leading to low cost. Such a finding is very meaningful for the potential commercialization of hybrid WOLEDs.

Enhancement in c-Si solar cells using 16 nm InN nanoparticles

NASA Astrophysics Data System (ADS)

Imtiaz Chowdhury, Farsad; Alnuaimi, Aaesha; Alkis, Sabri; Ortaç, Bülend; Aktürk, Selçuk; Alevli, Mustafa; Dietz, Nikolaus; Kemal Okyay, Ali; Nayfeh, Ammar

2016-05-01

In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 μm p type c-Si, 4-5 nm n type a-Si, 15 nm n+ type a-Si and 80 nm ITO grown on a p+ type Si substrate. On average, short circuit current density (Jsc) increases from 19.64 mA cm-2 to 21.54 mA cm-2 with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400-620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.

Highly Efficient Full-Color Thermally Activated Delayed Fluorescent Organic Light-Emitting Diodes: Extremely Low Efficiency Roll-Off Utilizing a Host with Small Singlet-Triplet Splitting.

PubMed

Zhang, Dongdong; Zhao, Chongguang; Zhang, Yunge; Song, Xiaozeng; Wei, Pengcheng; Cai, Minghan; Duan, Lian

2017-02-08

Numerous efforts have been devoted to boost the efficiency of thermally activated delayed fluorescence (TADF) devices; however, strategies to suppress the device efficiency roll-off are still in urgent need. Here, a general and effective approach to suppress the efficiency roll-off of TADF devices is proposed, that is, utilizing TADF materials as the hosts for TADF emitters. Bearing small singlet-triplet splitting (ΔE ST ) with donor and acceptor units, TADF materials as the hosts possess the potential to achieve matched frontier energy levels with the adjacent transporting layers, facilitating balanced charge injection as well as bipolar charge transport mobilities beneficial to the balanced charges transportation. Furthermore, an enhanced Förster energy transfer from the host to the dopant can be anticipated, helpful to reduce the exciton concentration. Based on the principles, a new TADF material based on indeno[2,1-b]carbazole/1,3,5-triazin derivation is synthesized and used as the universal host for the full-color TADF devices. Remarkable low efficiency roll-off was achieved with above 90% of the maximum external quantum efficiencies (EQE max 's) maintained even at a brightness of 2000 cd/m 2 , along with EQE max 's of 23.2, 21.0, and 19.2% for orange, green, and sky-blue TADF devices, respectively. Through computational simulation, we identified the suppressed exciton annihilation rates compared with devices adopting conventional hosts. The state-of-the-art low efficiency roll-off of those TADF devices manifests the great potential of such host design strategy, paving an efficient strategy toward their practical application.

Bio-Photoelectrochemical Solar Cells Incorporating Reaction Center and Reaction Center Plus Light Harvesting Complexes

NASA Astrophysics Data System (ADS)

Yaghoubi, Houman

Harvesting solar energy can potentially be a promising solution to the energy crisis now and in the future. However, material and processing costs continue to be the most important limitations for the commercial devices. A key solution to these problems might lie within the development of bio-hybrid solar cells that seeks to mimic photosynthesis to harvest solar energy and to take advantage of the low material costs, negative carbon footprint, and material abundance. The bio-photoelectrochemical cell technologies exploit biomimetic means of energy conversion by utilizing plant-derived photosystems which can be inexpensive and ultimately the most sustainable alternative. Plants and photosynthetic bacteria harvest light, through special proteins called reaction centers (RCs), with high efficiency and convert it into electrochemical energy. In theory, photosynthetic RCs can be used in a device to harvest solar energy and generate 1.1 V open circuit voltage and ~1 mA cm-2 short circuit photocurrent. Considering the nearly perfect quantum yield of photo-induced charge separation, efficiency of a protein-based solar cell might exceed 20%. In practice, the efficiency of fabricated devices has been limited mainly due to the challenges in the electron transfer between the protein complex and the device electrodes as well as limited light absorption. The overarching goal of this work is to increase the power conversion efficiency in protein-based solar cells by addressing those issues (i.e. electron transfer and light absorption). This work presents several approaches to increase the charge transfer rate between the photosynthetic RC and underlying electrode as well as increasing the light absorption to eventually enhance the external quantum efficiency (EQE) of bio-hybrid solar cells. The first approach is to decrease the electron transfer distance between one of the redox active sites in the RC and the underlying electrode by direct attachment of the of protein complex onto Au electrodes via surface exposed cysteine residues. This resulted in photocurrent densities as large as ~600 nA cm-2 while still the incident photon to generated electron quantum efficiency was as low as %3 x 10-4. 2- The second approach is to immobilize wild type RCs of Rhodobacter sphaeroides on the surface of a Au underlying electrode using self-assembled monolayers of carboxylic acid terminated oligomers and cytochrome c charge mediating layers, with a preferential orientation from the primary electron donor site. This approach resulted in EQE of up to 0.06%, which showed 200 times efficiency improvement comparing to the first approach. In the third approach, instead of isolated protein complexes, RCs plus light harvesting (LH) complexes were employed for a better photon absorption. Direct attachment of RC-LH1 complexes on Au working electrodes, resulted in 0.21% EQE which showed 3.5 times efficiency improvement over the second approach (700 times higher than the first approach). The main impact of this work is the harnessing of biological RCs for efficient energy harvesting in man-made structures. Specifically, the results in this work will advance the application of RCs in devices for energy harvesting and will enable a better understanding of bio and nanomaterial interfaces, thereby advancing the application of biological materials in electronic devices. At the end, this work offers general guidelines that can serve to improve the performance of bio-hybrid solar cells.

Efficient near-infrared emission of π-extended cyclometalated iridium complexes based on pyrene in solution-processed polymer light-emitting diode

NASA Astrophysics Data System (ADS)

Liu, Yu; Hao, Zhaoran; Meng, Fanyuan; Wang, Pu; Yang, Liang; Wang, Yafei; Pei, Yong; Su, Shijian

2018-05-01

A novel iridium complex grafting hole-transporting triphenylamine (TPA) unit onto cyclometalated ligand, namely t-BuPyrPyTPA)2Ir(acac), was successfully synthesized and characterized. The photophysical, electrochemical and DFT/TD-DFT calculation, as well as electroluminescence properties of this iridium complex were fully investigated. Meanwhile, the PLEDs employing (t-BuPyrPyTPA)2Ir(acac) as dopant presented stable NIR emission peaked at 697 nm and a shoulder at 764 nm with a highest external quantum efficiency (EQE) of 0.56% at 4 wt% dopant concentration. These results demonstrate that expanding the conjugation length of the ligand is an effective way to achieve NIR emission.

Ultrathin nondoped emissive layers for efficient and simple monochrome and white organic light-emitting diodes.

PubMed

Zhao, Yongbiao; Chen, Jiangshan; Ma, Dongge

2013-02-01

In this paper, highly efficient and simple monochrome blue, green, orange, and red organic light emitting diodes (OLEDs) based on ultrathin nondoped emissive layers (EMLs) have been reported. The ultrathin nondoped EML was constructed by introducing a 0.1 nm thin layer of pure phosphorescent dyes between a hole transporting layer and an electron transporting layer. The maximum external quantum efficiencies (EQEs) reached 17.1%, 20.9%, 17.3%, and 19.2% for blue, green, orange, and red monochrome OLEDs, respectively, indicating the universality of the ultrathin nondoped EML for most phosphorescent dyes. On the basis of this, simple white OLED structures are also demonstrated. The demonstrated complementary blue/orange, three primary blue/green/red, and four color blue/green/orange/red white OLEDs show high efficiency and good white emission, indicating the advantage of ultrathin nondoped EMLs on constructing simple and efficient white OLEDs.

Controlling charge balance and exciton recombination by bipolar host in single-layer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Tao, Youtian; Wang, Qiang; Ma, Dongge; Yang, Chuluo; Wang, Lixiang; Qin, Jingui; Wang, Fosong

2010-08-01

Highly efficient single-layer organic light-emitting diodes with reduced efficiency roll-off are demonstrated by using a bipolar host material of 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) doped with iridium complexes as the emissive layer. For example, the green single-layer device, employing fac-tris(2-phenylpyridine)iridium Ir(ppy)3 as dopant, shows a peak current efficiency of 45.57 cd A-1, corresponding to external quantum efficiency (EQE) of 12.42%, and still exhibits efficiencies of 45.26 cd A-1 and 40.42 cd A-1 at luminance of 1000 and 10 000 cd m-2, respectively. In addition, the yellow and red single-layer devices, with bis(2-(9,9- diethyl-9H-fluoren-2-yl)-1-phenyl-1H-benzoimidazol-N ,C3)iridium(acetylacetonate) (fbi)2Ir(acac) and bis(1-phenylisoquinolinolato-C2,N)iridium(acetylacetonate) (piq)2Ir(acac) as emitter, also show high EQE of 7.04% and 7.28%, respectively. The transport properties of o-CzOXD film are well investigated by current-voltage measurement, from which both hole and electron mobility are determined. It is found that the o-CzOXD shows appealing bipolar transport character, which is favor for the balanced charge distribution in the whole doped zone. More importantly, the multifunctional role of hole trapping and electron transporting of the iridium complex in o-CzOXD further balances the charge carriers and broadens the recombination zone. As a result, the recombination of electrons and holes is significantly improved and the triplet-triplet annihilation and triplet-polaron quenching processes are effectively suppressed, eventually leading to the high efficiency as well as the reduced efficiency roll-off.

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

PubMed

Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

2018-02-14

Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

Enhanced blue responses in nanostructured Si solar cells by shallow doping

NASA Astrophysics Data System (ADS)

Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

2018-03-01

Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

Enhanced Light Extraction from OLEDs Fabricated on Patterned Plastic Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hippola, Chamika; Kaudal, Rajiv; Manna, Eeshita

A key scientific and technological challenge in organic light-emitting diodes (OLEDs) is enhancing the light outcoupling factor η out, which is typically <20%. This paper reports experimental and modeling results of a promising approach to strongly increase η out by fabricating OLEDs on novel flexible nanopatterned substrates that result in a >2× enhancement in green phosphorescent OLEDs (PhOLEDs) fabricated on corrugated polycarbonate (PC). The external quantum efficiency (EQE) reaches 50% (meaning ηout ≥50%); it increases 2.6x relative to a glass/ITO device and 2× relative to devices on glass/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) or flat PC/PEDOT:PSS. A significant enhancement is also observed formore » blue PhOLEDs with EQE 1.7× relative to flat PC. The corrugated PC substrates are fabricated efficiently and cost-effectively by direct room-temperature molding. These substrates successfully reduce photon losses due to trapping/waveguiding in the organic+anode layers and possibly substrate, and losses to plasmons at the metal cathode. Focused ion beam gauged the conformality of the OLEDs. Dome-shaped convex nanopatterns with height of ~280–400 nm and pitch ~750–800 nm were found to be optimal. Lastly, substrate design and layer thickness simulations, reported first for patterned devices, agree with the experimental results that present a promising method to mitigate photon loss paths in OLEDs.« less

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Light Extraction from OLEDs Fabricated on Patterned Plastic Substrates

DOE PAGES

Hippola, Chamika; Kaudal, Rajiv; Manna, Eeshita; ...

2018-02-19

A key scientific and technological challenge in organic light-emitting diodes (OLEDs) is enhancing the light outcoupling factor η out, which is typically <20%. This paper reports experimental and modeling results of a promising approach to strongly increase η out by fabricating OLEDs on novel flexible nanopatterned substrates that result in a >2× enhancement in green phosphorescent OLEDs (PhOLEDs) fabricated on corrugated polycarbonate (PC). The external quantum efficiency (EQE) reaches 50% (meaning ηout ≥50%); it increases 2.6x relative to a glass/ITO device and 2× relative to devices on glass/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) or flat PC/PEDOT:PSS. A significant enhancement is also observed formore » blue PhOLEDs with EQE 1.7× relative to flat PC. The corrugated PC substrates are fabricated efficiently and cost-effectively by direct room-temperature molding. These substrates successfully reduce photon losses due to trapping/waveguiding in the organic+anode layers and possibly substrate, and losses to plasmons at the metal cathode. Focused ion beam gauged the conformality of the OLEDs. Dome-shaped convex nanopatterns with height of ~280–400 nm and pitch ~750–800 nm were found to be optimal. Lastly, substrate design and layer thickness simulations, reported first for patterned devices, agree with the experimental results that present a promising method to mitigate photon loss paths in OLEDs.« less

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu

2015-05-15

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A referencemore » LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.« less

Optical, electrical, and photovoltaic properties of PbS thin films by anionic and cationic dopants

NASA Astrophysics Data System (ADS)

Cheraghizade, Mohsen; Jamali-Sheini, Farid; Yousefi, Ramin

2017-06-01

Lead sulfide (PbS) thin films were deposited by CVD method to examine the effects of anionic and cationic dopants on optical and electrical properties for photovoltaic applications. XRD diffractograms verified the formation of cubic phase of multicrystalline PbS thin films. FESEM images showed surface morphologies in nano-dimensions (rods and flowers). UV-Vis-NIR spectrum revealed absorbance in the visible and NIR regions for all samples, in which dopants decreased the intensity of absorbance. Se as an anionic dopant for PbS thin films increased electrical resistance, acceptor concentrations, and crystallite defects, and decreased flat-band voltage and depletion width. Finally, photovoltaic measurements indicated that Zn-doped PbS thin film, as a photovoltaic cell, exhibited higher conversion efficiency and external quantum efficiency (EQE).

Simplified efficient phosphorescent organic light-emitting diodes by organic vapor phase deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, P.; Beckmann, C.; Stümmler, D.; Sanders, S.; Simkus, G.; Heuken, M.; Vescan, A.; Kalisch, H.

2017-12-01

The most efficient phosphorescent organic light-emitting diodes (OLEDs) are comprised of complex stacks with numerous organic layers. State-of-the-art phosphorescent OLEDs make use of blocking layers to confine charge carriers and excitons. On the other hand, simplified OLEDs consisting of only three organic materials have shown unexpectedly high efficiency when first introduced. This was attributed to superior energy level matching and suppressed external quantum efficiency (EQE) roll-off. In this work, we study simplified OLED stacks, manufactured by organic vapor phase deposition, with a focus on charge balance, turn-on voltage (Von), and efficiency. To prevent electrons from leaking through the device, we implemented a compositionally graded emission layer. By grading the emitter with the hole transport material, charge confinement is enabled without additional blocking layers. Our best performing organic stack is composed of only three organic materials in two layers including the emitter Ir(ppy)3 and yields a Von of 2.5 V (>1 cd/m2) and an EQE of 13% at 3000 cd/m2 without the use of any additional light extraction techniques. Changes in the charge balance, due to barrier tuning or adjustments in the grading parameters and layer thicknesses, are clearly visible in the current density-voltage-luminance (J-V-L) measurements. As charge injection at the electrodes and organic interfaces is of great interest but difficult to investigate in complex device structures, we believe that our simplified organic stack is not only a potent alternative to complex state-of-the-art OLEDs but also a well suited test vehicle for experimental studies focusing on the modification of the electrode-organic semiconductor interface.

Electrical and Optical Characterization of Nanowire based Semiconductor Devices

NASA Astrophysics Data System (ADS)

Ayvazian, Talin

This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl2 in methanol- a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mueff<) by an order of magnitude and increase of the Ion/Ioff ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 °C x 1h enhanced grain growth confirmed by structural characterization including X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Raman Spectroscopy. Correspondingly the light emission intensity and EQE improved due to this grain growth. Kelvin probe force microscopy (KPFM) was utilized to understand mechanism of light emission in CdSe nanowires. Arrays of CdTe nanowires were electrodeposited using LPNE process where the elec- trodeposition of pc-CdTe was carried out at two temperatures: 20 °C (cold) and 55 °C (hot). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) re- sults revealed higher crystallinity, larger grain size and presence of Te for nanowires prepared at 55°C compared to nanowires deposited at 20°C. Nanowires prepared at 55°C showed higher electrical conductivity and enhanced electroluminescence proper- ties, including higher light emission intensity and improved External Quantum Efficiency (EQE). Electrical conduction mechanism also investigated for CdTe nanowires. Thermionic emission over schottky barrier height was identified as the dominant charge transport mechanism in pc-CdTe nanowires.°C x 1h enhanced grain growth confirmed by structural characterization including X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Raman Spectroscopy. Correspondingly the light emission intensity and EQE improved due to this grain growth. Kelvin probe force microscopy (KPFM) was utilized to understand mechanism of light emission in CdSe nanowires. Arrays of CdTe nanowires were electrodeposited using LPNE process where the electrodeposition of pc-CdTe was carried out at two temperatures: 20 °C (cold) and 55 °C (hot). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) re- sults revealed higher crystallinity, larger grain size and presence of Te for nanowires prepared at 55°C compared to nanowires deposited at 20°C. Nanowires prepared at 55°C showed higher electrical conductivity and enhanced electroluminescence properties, including higher light emission intensity and improved External Quantum Efficiency (EQE). Electrical conduction mechanism also investigated for CdTe nanowires. Thermionic emission over schottky barrier height was identified as the dominant charge transport mechanism in pc-CdTe nanowires.

Highly Efficient Perovskite Solar Cells with Substantial Reduction of Lead Content.

PubMed

Liu, Chong; Fan, Jiandong; Li, Hongliang; Zhang, Cuiling; Mai, Yaohua

2016-10-18

Despite organometal halide perovskite solar cells have recently exhibited a significant leap in efficiency, the Sn-based perovskite solar cells still suffer from low efficiency. Here, a series homogeneous CH 3 NH 3 Pb (1-x) Sn x I 3 (0 ≤ x ≤ 1) perovskite thin films with full coverage were obtained via solvent engineering. In particular, the intermediate complexes of PbI 2 /(SnI 2 )∙(DMSO) x were proved to retard the crystallization of CH 3 NH 3 SnI 3 , thus allowing the realization of high quality Sn-introduced perovskite thin films. The external quantum efficiency (EQE) of as-prepared solar cells were demonstrated to extend a broad absorption minimum over 50% in the wavelength range from 350 to 950 nm accompanied by a noteworthy absorption onset up to 1050 nm. The CH 3 NH 3 Pb 0.75 Sn 0.25 I 3 perovskite solar cells with inverted structure were consequently realized with maximum power conversion efficiency (PCE) of 14.12%.

Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Yang, Zhou; Albrecht, Alexander R.; Sheik-Bahae, Mansoor

2017-02-01

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.

Recent development of organic light-emitting diode utilizing energy transfer from exciplex to phosphorescent emitter

NASA Astrophysics Data System (ADS)

Seo, Satoshi; Shitagaki, Satoko; Ohsawa, Nobuharu; Inoue, Hideko; Suzuki, Kunihiko; Nowatari, Hiromi; Takahashi, Tatsuyoshi; Hamada, Takao; Watabe, Takeyoshi; Yamada, Yui; Mitsumori, Satomi

2016-09-01

This study investigates an organic light-emitting diode (OLED) utilizing energy transfer from an excited complex (exciplex) comprising donor and acceptor molecules to a phosphorescent dopant. An exciplex has a very small energy gap between the lowest singlet and triplet excited states (S1 and T1). Thus, both S1 and T1 energies of the exciplex can be directly transferred to the T1 of the phosphorescent dopant by adjusting the emission energy of the exciplex to the absorption-edge energy of the dopant. Such an exciplex‒triplet energy transfer (ExTET) achieves high efficiency at low drive voltage because the electrical excitation energy of the exciplex approximates the T1 energy of the dopant. Furthermore, the efficiency of the reverse intersystem crossing (RISC) of the exciplex does not affect the external quantum efficiency (EQE) of the ExTET OLED. The RISC of the exciplex is inhibited when the T1 energy of either donor or acceptor molecules is close to or lower than that of the exciplex itself. Even in this case, however, the ExTET OLED maintains its high efficiency because the T1 energy of each component of the exciplex or the T1 energy of the exciplex itself can be transferred to the dopant. We also varied the emission colors of ExTET OLEDs from sky-blue to red by introducing various phosphorescent dopants. These devices achieved high EQEs (≍30%), low drive voltages (≍3 V), and extremely long lifetimes (e.g., 1 million hours for the orange OLED) at a luminance of 1,000 cd/m2.

Bright Visible-Infrared Light Emitting Diodes Based on Hybrid Halide Perovskite with Spiro-OMeTAD as a Hole-Injecting Layer.

PubMed

Jaramillo-Quintero, Oscar A; Sanchez, Rafael S; Rincon, Marina; Mora-Sero, Ivan

2015-05-21

Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI(3-x)Cl(x) and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr(-1)·m(-2) at a current density of 232 mA·cm(-2), and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (V(turn-on) = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself.

Versatile plasmonic-effects at the interface of inverted perovskite solar cells.

PubMed

Shalan, Ahmed Esmail; Oshikiri, Tomoya; Sawayanagi, Hiroki; Nakamura, Keisuke; Ueno, Kosei; Sun, Quan; Wu, Hui-Ping; Diau, Eric Wei-Guang; Misawa, Hiroaki

2017-01-19

Plasmonics is a highly promising approach to enhancing the light-harvesting properties of hybrid organic/inorganic perovskite solar cells. In the present work, our cells have a p-i-n inverted planar structure. An ultrathin NiO film with two different thicknesses of 5 and 10 nm prepared by a pulsed laser deposition process on an ITO substrate with a faceted and furrowed surface enabled the formation of a continuous and compact layer of well-crystallized CH 3 NH 3 PbI 3 via an anti-solvent chlorobenzene process. The coverage mechanism of the NiO film on the ITO was clearly demonstrated through the J-V and external quantum efficiency (EQE) curves. Moreover, the results demonstrated that the gold nanoislands (Au NIs) increased the power conversion efficiency to 5.1%, almost double that of the samples without Au NIs. This result is due to the excitation of surface plasmons, which is characterized by strong scattering and enhancement of the electric field in the vicinity of the Au NIs loaded at the interface between the NiO and perovskite films. Additionally, we observed an enhancement of the EQE at wavelengths shorter than the plasmon resonance peak. In the current state, we speculate that the plasmoelectric potential effect is considered to be a good explanation of the photocurrent enhancement at the off-resonance region. Our work provides good guidance for the design and fabrication of solar-energy-related devices employing NiO electrodes and plasmonic Au NIs.

New ultra deep blue emitters based on chrysene chromophores

NASA Astrophysics Data System (ADS)

Shin, Hwangyu; Kang, Seokwoo; Jung, Hyocheol; Lee, Hayoon; Lee, Jaehyun; Kim, Beomjin; Park, Jongwook

2016-09-01

Chrysene, which has a wide band gap, was selected as an emission core to develop and study new materials that emit ultra-deep-blue light with high efficiency. Six compounds introducing various side groups were designed and synthesized: 6, 12-bis(30,50-diphenylphenyl)chrysene (TP-C-TP), 6-(30,50-diphenylphenyl)-12-(3,5-diphenylbiphenyl-400-yl)chrysene (TP-C-TPB) and 6,12-bis(300,500-diphenylbiphenyl-40-yl)chrysene (TPB-C-TPB), which contained bulky aromatic si de groups; and N,N,N0 ,N0-tetraphenyl-chrysene-6,12-diamine (DPA-C-DPA), [12-(4-diphenylamino-phenyl)-chrysene-6-yl]-diphenylamine(DPA-C-TPA) and 6,12-bis[4-(diphenylamino)phenyl]chrysene (TPA-C-TPA), which contained aromatic amine groups, were designed to afford improved hole injection properties. The synthesized materials showed maxi mum absorption wavelengths at 342-402 nm in the film state and exhibited deep-blue photoluminescence (PL) emission s at 417-464 nm. The use of TP-C-TPB in a non-doped organic light emitting diode (OLED) device resulted in ultra-deep-blue emission with an external quantum efficiency (EQE) of 4.02% and Commission Internationale de L'Eclairage coo rdinates (CIE x, y) of (0.154, 0.042) through effective control of the internal conjugation length and suppression of the p -p* stacking. The use of TPA-C-TPA, which includes an aromatic amine side group, afforded an excellent EQE of 4.83 % and excellent color coordinates CIE x, y of (0.147, 0.077).

Fusing Benzo[c][1,2,5]oxadiazole Unit with Thiophene for Constructing Wide-bandgap High-performance IDT-based Polymer Solar Cell Donor Material.

PubMed

Song, Xin; Fan, Meijie; Zhang, Kaili; Ding, Dakang; Chen, Weiye; Li, Yonghai; Yu, Liangmin; Sun, Mingliang; Yang, Renqiang

2018-04-01

Benzo[c][1,2,5]oxadiazole (BO) moiety is a strong electron-withdrawing unit compared to benzo[c][1,2,5]thiadiazole (BT). It is usually introduced as an acceptor to construct narrow band-gap donor-acceptor (D-A) materials. Herein, the π-extended conjugated moiety dithieno[3',2':3,4″;2,3″:5,6]benzo[1,2-c][1,2,5]oxadiazole (BOT) was adopted as the acceptor moiety to design D-A polymers. Considering the more extended π-conjugated molecular system of BOT compared to the BO unit, a narrower optical band-gap is expected for BOT-based IDT polymer (PIDT-BOT). Unexpectedly, the UV-vis absorption spectra of PIDT-BOT films display a great hypochromatic shift of about 60 nm compared to a BO-based analog (PIDT-BO). The optical band-gaps of the materials are broadened from 1.63 eV (PIDT-BO) to 2.00 eV (PIDT-BOT) accordingly. Although the range of external quantum efficiency (EQE) of PIDT-BOT-based polymer solar cell (PSC) devices is not as wide as for PIDT-BO-based devices, the EQE response intensities of the PIDT-BOT based device are evidently high. As a result, PSC devices based on PIDT-BOT reveal the best power conversion efficiency at 6.08%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvements of phosphorescent white OLEDs performance for lighting application.

PubMed

Lee, Jonghee; Chu, Hye Yong; Lee, Jeong-Ik; Song, Ki-Im; Lee, Su Jin

2008-10-01

We developed white OLED device with high power efficiency, in which blue and orange phosphorescent emitters were used. By introduction of multi-functional interlayer which has partial doping of orange dopant inside EBL, we report WOLEDs with peak external efficiencies up to (14.1% EQE, 31.3 Im/W) without light out-coupling technique. At 1000 cd/m2, the performance achieved was 11.9% EQE, 18.7 Im/W with CIE = (0.39, 0.44). We also found that WOLED performances are related with doping ratio of the orange dopant that was inserted inside EBL.

Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements

NASA Astrophysics Data System (ADS)

Pradhan, Nihar R.; Garcia, Carlos; Holleman, Joshua; Rhodes, Daniel; Parker, Chason; Talapatra, Saikat; Terrones, Mauricio; Balicas, Luis; McGill, Stephen A.

2016-12-01

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) have been extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A W-1 and ˜4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage V ds = 1 V and a gate voltage V bg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ˜85 A W-1 and ˜20 000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.

Fully Printed Halide Perovskite Light-Emitting Diodes with Silver Nanowire Electrodes.

PubMed

Bade, Sri Ganesh R; Li, Junqiang; Shan, Xin; Ling, Yichuan; Tian, Yu; Dilbeck, Tristan; Besara, Tiglet; Geske, Thomas; Gao, Hanwei; Ma, Biwu; Hanson, Kenneth; Siegrist, Theo; Xu, Chengying; Yu, Zhibin

2016-02-23

Printed organometal halide perovskite light-emitting diodes (LEDs) are reported that have indium tin oxide (ITO) or carbon nanotubes (CNTs) as the transparent anode, a printed composite film consisting of methylammonium lead tribromide (Br-Pero) and poly(ethylene oxide) (PEO) as the emissive layer, and printed silver nanowires as the cathode. The fabrication can be carried out in ambient air without humidity control. The devices on ITO/glass have a low turn-on voltage of 2.6 V, a maximum luminance intensity of 21014 cd m(-2), and a maximum external quantum efficiency (EQE) of 1.1%, surpassing previous reported perovskite LEDs. The devices on CNTs/polymer were able to be strained to 5 mm radius of curvature without affecting device properties.

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

NASA Astrophysics Data System (ADS)

Arya, Sandeep; Sharma, Asha; Singh, Bikram; Riyas, Mohammad; Bandhoria, Pankaj; Aatif, Mohammad; Gupta, Vinay

2018-05-01

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (-1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

Luminescent zinc(ii) and copper(i) complexes for high-performance solution-processed monochromic and white organic light-emitting devices† †Electronic supplementary information (ESI) available: Experimental procedures, device performances, and computational details. CCDC 1054456, 1400003 and 1400004. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4sc03161j Click here for additional data file. Click here for additional data file.

PubMed Central

Cheng, Gang; So, Gary Kwok-Ming; To, Wai-Pong; Chen, Yong; Kwok, Chi-Chung; Ma, Chensheng; Guan, Xiangguo; Chang, Xiaoyong; Kwok, Wai-Ming

2015-01-01

The synthesis and spectroscopic properties of luminescent tetranuclear zinc(ii) complexes of substituted 7-azaindoles and a series of luminescent copper(i) complexes containing 7,8-bis(diphenylphosphino)-7,8-dicarba-nido-undecaborate ligand are described. These complexes are stable towards air and moisture. Thin film samples of the luminescent copper(i) complexes in 2,6-dicarbazolo-1,5-pyridine and zinc(ii) complexes in poly(methyl methacrylate) showed emission quantum yields of up to 0.60 (for Cu-3) and 0.96 (for Zn-1), respectively. Their photophysical properties were examined by ultrafast time-resolved emission spectroscopy, temperature dependent emission lifetime measurements and density functional theory calculations. Monochromic blue and orange solution-processed OLEDs with these Zn(ii) and Cu(i) complexes as light-emitting dopants have been fabricated, respectively. Maximum external quantum efficiency (EQE) of 5.55% and Commission Internationale de l'Eclairage (CIE) coordinates of (0.16, 0.19) were accomplished with the optimized Zn-1-OLED while these values were, respectively 15.64% and (0.48, 0.51) for the optimized Cu-3-OLED. Solution-processed white OLEDs having maximum EQE of 6.88%, CIE coordinates of (0.42, 0.44), and colour rendering index of 81 were fabricated by using these luminescent Zn(ii) and Cu(i) complexes as blue and orange light-emitting dopant materials, respectively. PMID:29142704

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

NASA Astrophysics Data System (ADS)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

PubMed

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Amine-Based Passivating Materials for Enhanced Optical Properties and Performance of Organic-Inorganic Perovskites in Light-Emitting Diodes.

PubMed

Lee, Seungjin; Park, Jong Hyun; Lee, Bo Ram; Jung, Eui Dae; Yu, Jae Choul; Di Nuzzo, Daniele; Friend, Richard H; Song, Myoung Hoon

2017-04-20

The use of hybrid organic-inorganic perovskites in optoelectronic applications are attracting an interest because of their outstanding characteristics, which enable a remarkable enhancement of device efficiency. However, solution-processed perovskite crystals unavoidably contain defect sites that cause hysteresis in perovskite solar cells (PeSCs) and blinking in perovskite light-emitting diodes (PeLEDs). Here, we report significant beneficial effects using a new treatment based on amine-based passivating materials (APMs) to passivate the defect sites of methylammonium lead tribromide (MAPbBr 3 ) through coordinate bonding between the nitrogen atoms and undercoordinated lead ions. This treatment greatly enhanced the PeLED's efficiency, with an external quantum efficiency (EQE) of 6.2%, enhanced photoluminescence (PL), a lower threshold for amplified spontaneous emission (ASE), a longer PL lifetime, and enhanced device stability. Using confocal microscopy, we observed the cessation of PL blinking in perovskite films treated with ethylenediamine (EDA) due to passivation of the defect sites in the MAPbBr 3 .

Broadband Solar Energy Harvesting in Single Nanowire Resonators

NASA Astrophysics Data System (ADS)

Yang, Yiming; Peng, Xingyue; Hyatt, Steven; Yu, Dong

2015-03-01

Sub-wavelength semiconductor nanowires (NWs) can have optical absorption cross sections far beyond their physical sizes at resonance frequencies, offering a powerful method to simultaneously lower the material consumption and enhance photovoltaic performance. The degree of absorption enhancement is expected to substantially increase in materials with high refractive indices, but this has not yet been experimentally demonstrated. Here, we show that the absorption efficiency can be significantly improved in high-index NWs, by a direct observation of 350% external quantum efficiency (EQE) in lead sulfide (PbS) NWs. Broadband absorption enhancement is also realized in tapered NWs, where light of different wavelength is absorbed at segments with different diameters analogous to a tandem solar cell. Our results quantitatively agree with the finite-difference-time-domain (FDTD) simulations. Overall, our single PbS NW Schottky solar cells taking advantage of optical resonance, near bandgap open circuit voltage, and long minority carrier diffusion length exhibit power conversion efficiency comparable to single Si NW coaxial p-n junction cells, while the fabrication complexity is greatly reduced.

Enhancing Photovoltaic Performance Using Broadband Luminescent Down-Shifting by Combining Multiple Species of Eu-Doped Silicate Phosphors.

PubMed

Ho, Wen-Jeng; Shen, Yu-Tang; Liu, Jheng-Jie; You, Bang-Jin; Ho, Chun-Hung

2017-10-21

This paper demonstrates the application of a broadband luminescent downshifting (LDS) layer with multiple species of europium (Eu)-doped silicate phosphors using spin-on film technique to enhance the photovoltaic efficiency of crystalline silicon solar cells. The surface morphology of the deposited layer was examined using a scanning electron microscope (SEM). The chemical composition of the Eu-doped silicate phosphors was analyzed using energy-dispersive X-ray spectroscopy (EDS). The fluorescence emission of the Eu-doped silicate phosphors was characterized using photoluminescence (PL) measurements at room temperature. We also compared the optical reflectance and external quantum efficiency (EQE) response of cells with combinations of various Eu-doped phosphors species. The cell coated with two species of Eu-doped phosphors achieved a conversion efficiency enhancement (∆ η ) of 19.39%, far exceeding the ∆ η = 15.08% of the cell with one species of Eu-doped phosphors and the ∆ η = 8.51% of the reference cell with the same silicate layer without Eu-doped phosphors.

Thermally activated delayed fluorescent phenothiazine–dibenzo[a,j]phenazine–phenothiazine triads exhibiting tricolor-changing mechanochromic luminescence† †Electronic supplementary information (ESI) available: Synthetic procedures, spectroscopic data, copies of NMR charts, physicochemical properties, and device fabrication and performances. CCDC 1452024. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6sc04863c Click here for additional data file. Click here for additional data file.

PubMed Central

Okazaki, Masato; Pander, Piotr; Higginbotham, Heather; Monkman, Andrew P.

2017-01-01

Novel U-shaped donor–acceptor–donor (D–A–D) π-conjugated multi-functional molecules comprising dibenzo[a,j]phenazine (DBPHZ) as an acceptor and phenothiazines (PTZ) as donors have been developed. Most importantly, the D–A–D compounds exhibit not only distinct tricolor-changeable mechanochromic luminescence (MCL) properties but also efficient thermally activated delayed fluorescence (TADF). Quantum chemical calculations, X-ray diffraction analysis, and systematic studies on the photophysical properties indicated that the “two-conformation-switchable” PTZ units play a highly important role in achieving multi-color-changing MCL. Time-resolved photophysical measurements revealed that the developed D–A–D compounds also exhibit efficient orange-TADF. Furthermore, organic light-emitting diode (OLED) devices fabricated with the new TADF emitters have achieved high external quantum efficiencies (EQEs) up to 16.8%, which significantly exceeds the theoretical maximum (∼5%) of conventional fluorescent emitters. PMID:28553504

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE PAGES

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.; ...

2017-02-15

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

NASA Astrophysics Data System (ADS)

Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

2016-09-01

GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ˜33% at an applied bias of 15 V and an input power of 0.8 W m-2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ˜97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

Enhanced cooling of Yb:YLF using astigmatic Herriott cell (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gragossian, Aram; Meng, Junwei; Ghasemkhani, Mohammadreza; Albrecht, Alexander R.; Tonelli, Mauro; Sheik-Bahae, Mansoor

2017-02-01

Optical refrigeration of solids requires crystals with exceptional qualities. Crystals with external quantum efficiencies (EQE) larger than 99% and background absorptions of 4×10-4cm-1 have been cooled to cryogenic temperatures using non resonant cavities. Estimating the cooling efficiency requires accurate measurements of the above mentioned quantities. Here we discuss measurements of EQE and background absorption for two high quality Yb:YLF samples. For any given sample, to reach minimum achievable temperatures heat generated by fluorescence must be removed from the surrounding clamshell and more importantly, absorption of the laser light must be maximized. Since the absorption coefficient drops at lower temperatures the only option is to confine laser light in a cavity until almost 100% of the light is absorbed. This can be achieved by placing the crystal between a cylindrical and spherical mirror to form an astigmatic Herriott cell. In this geometry light enters through a hole in the middle of the spherical mirror and if the entrance angle is correct, it can make as many round trips as required to absorb all the light. At 120 K 60 passes and 150 passes at 100K ensures more than 95% absorption of the laser light. 5 and 10% Yb:YLF crystals placed in such a cell cool to sub 90K temperatures. Non-contact temperature measurements are more challenging for such a geometry. Reabsorption of fluorescence for each pass must be taken into account for accurate temperature measurements by differential luminescence thermometry (DLT). Alternatively, we used part of the spectrum that is not affected by reabsorption.

Investigation of transport properties of ZnO/PbS heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cheng, Yang; Whitaker, Michael D. C.; Whiteside, Vincent R.; Bumm, Lloyd A.; Sellers, Ian R.

Lead sulfide (PbS) and lead selenide (PbSe) colloidal quantum dots (CQDs) are considered as a potential candidate material for solar cell applications due to their large band gap tunability range (0.5 to 1.7 eV) and cost-effective solution based processing. A series of Glass/ITO/ZnO/PbS/MoO3/Au heterojunction solar cells were processed and analyzed. A stable (reproducible) 2% conversion efficiency under 1-sun is achieved based on the result of J - V measurements. Absorbance and external quantum efficiency (EQE) measurements clearly show photo-generated carrier extraction from PbS active layers in the solar cell. However, a non-ideal J - V behavior is observed in current-voltage measurements. This behavior may be attributed to a high density of trap states at the QD surface or defect states at the PbS/ZnO or ITO/ZnO interfaces. C-V and Impedance spectroscopy measurements are used to study this unusual behavior. These techniques could also help probe the transport properties and limitation of these heterojunction solar cells. This research is funded through NASA EPSCoR program Award # NNX13AN101A.

Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

PubMed

Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

2017-02-01

The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

PubMed

Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

2017-10-19

With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

High Efficiency MAPbI3 Perovskite Solar Cell Using a Pure Thin Film of Polyoxometalate as Scaffold Layer.

PubMed

Sardashti, Mohammad Khaledi; Zendehdel, Mahmoud; Nia, Narges Yaghoobi; Karimian, Davud; Sheikhi, Mohammad

2017-10-09

Here, we successfully used a pure layer of [SiW 11 O 39 ] 8- polyoxomethalate (POM) structure as a thin-film scaffold layer for CH 3 NH 3 PbI 3 -based perovskite solar cells (PSCs). A smooth nanoporous surface of POM causes outstanding improvement of the photocurrent density, external quantum efficiency (EQE), and overall efficiency of the PSCs compared to mesoporous TiO 2 (mp-TiO 2 ) as scaffold layer. Average power conversion efficiency (PCE) values of 15.5 % with the champion device showing 16.3 % could be achieved by using POM and a sequential deposition method with the perovskite layer. Furthermore, modified and defect-free POM/perovskite interface led to elimination of the anomalous hysteresis in the current-voltage curves. The open-circuit voltage decay study shows promising decrease of the electron recombination in the POM-based PSCs, which is also related to the modification of the POM/ perovskite interface and higher electron transport inside the POM layer. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices.

PubMed

Le Borgne, V; Gautier, L A; Castrucci, P; Del Gobbo, S; De Crescenzi, M; El Khakani, M A

2012-06-01

We report on the KrF-laser ablation synthesis, purification and photocurrent generation properties of single-wall carbon nanotubes (SWCNTs). The thermally purified SWCNTs are integrated into hybrid photovoltaic (PV) devices by spin-coating them onto n-Si substrates. These novel SWCNTs/n-Si hybrid devices are shown to generate significant photocurrent (PC) over the entire 250-1050 nm light spectrum with external quantum efficiencies (EQE) reaching up to ~23%. Our SWCNTs/n-Si hybrid devices are not only photoactive in the traditional spectral range of Si solar cells, but generate also significant PC in the UV domain (below 400 nm). This wider spectral response is believed to be the result of PC generation from both the SWCNTs themselves and the tremendous number of local p-n junctions created at the nanotubes/Si interface. To assess the prevalence of these two contributions, the EQE spectra and J-V characteristics of these hybrid devices were investigated in both planar and top-down configurations, as a function of SWCNTs' film thickness. A sizable increase in EQE in the near UV with respect to the silicon is observed in both configurations, with a more pronounced UV photoresponse in the planar mode, confirming thereby the role of SWCNTs in the photogeneration process. The PC generation is found to reach its maximum for an optimal the SWCNT film thickness, which is shown to correspond to the best trade-off between lowest electrical resistance and highest optical transparency. Finally, by analyzing the J-V characteristics of our SWCNTs/n-Si devices with an equivalent circuit model, we were able to point out the contribution of the various electrical components involved in the photogeneration process. The SWCNTs-based devices demonstrated here open up the prospect for their use in highly effective photovoltaics and/or UV-light sensors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hung, Cheng-Hung

The main objective of this project was to develop a low-cost integrated substrate for rigid OLED solid-state lighting produced at a manufacturing scale. The integrated substrates could include combinations of soda lime glass substrate, light extraction layer, and an anode layer (i.e., Transparent Conductive Oxide, TCO). Over the 3 + year course of the project, the scope of work was revised to focus on the development of a glass substrates with an internal light extraction (IEL) layer. A manufacturing-scale float glass on-line particle embedding process capable of producing an IEL glass substrate having a thickness of less than 1.7mm andmore » an area larger than 500mm x 400mm was demonstrated. Substrates measuring 470mm x 370mm were used in the OLED manufacturing process for fabricating OLED lighting panels in single pixel devices as large as 120.5mm x 120.5mm. The measured light extraction efficiency (calculated as external quantum efficiency, EQE) for on-line produced IEL samples (>50%) met the project’s initial goal.« less

Use of TCO as splitter in the optical splitting system for solar cells combination: a simulation study

NASA Astrophysics Data System (ADS)

Ayala-Mató, F.; Seuret-Jiménez, D.; Vigil-Galán, O.; Escobedo Alatorre, J. J.

2017-10-01

Transparent conducting oxides (TCOs) are evaluated as optical splitters in combined single thin film solar cells by using theoretical considerations. The optical properties of TCOs (transmittance and reflectance) are calculated using the Drude theory for free carriers. To improve the overall efficiency of the combined solar cells, the optical properties of the TCOs are studied as a function of the electron concentration and thickness, to obtain the best fit with the external quantum efficiency (EQE) of the solar cells in each case. The optimum values of the above parameters are obtained by applying a modified version of the Hooke-Jeeves method. To validate the proposal of the use of a TCO as the splitter, the short circuit current is calculated for several combined solar cell systems and the results are compared with those obtained using more sophisticated and expensive splitters, reported in the literature. The experimental results using a commercial TCO are presented, to verify the validity and feasibility of the novel concept.

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Lan, Ding; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin

2014-02-01

Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

Intermolecular interaction approach for TADF (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wong, Ken-Tsung

2016-09-01

Materials with thermally activated delayed fluorescence (TADF) have recently emerged as new fluorescent emitters for highly efficient organic light-emitting diodes (OLEDs). Molecule with TADF behavior needs to have a small singlet-triplet energy difference (ΔES-T) that allows the up-conversion from nonradiative triplet state (T1) to radiative singlet state (S1) via reverse intersystem crossing (RISC) process. Generally, molecules with small ΔES-T can be obtained via carefully manipulate the degree of "intramolecular" charge transfer (ICT) between electron-donating and -accepting components, such that the electron exchange energy that contributes to ΔES-T, can be minimized. Alternatively, excited state with small ΔES-T can be feasibly realized via "intermolecular" charge transfer occurring at the interface between spatially separating donor (D) and acceptor (A) molecules. Because the exchange energy decreases as the HOMO-LUMO separation distance increases, theoretically, the intermolecular D/A charge transfer state (or exciplex) should have rather small ΔES-T, leading to efficient TADF. However, it is still a challenge to access highly efficient exciplex systems. This is mainly because exciplex formation is commonly accompanied with a large red shift of emission spectra and long radiative lifetime, which tend to diminish photoluminescence quantum yield (PLQY) as well as electroluminescence (EL) performance. Until now, exciplex-based OLEDs with external quantum efficiency (EQE) above 10% are still limited. By judicious selection of donor and acceptor, the formation of efficient exciplex can be feasibly achieved. In this conference, our recent efforts on highly efficient exciplexes using C3-symmetry triazine acceptors and various donors, and their device characteristics will be presented.

Local Imaging of Optoelectronic Properties and Film Degradation in Polymer/Fullerene Solar Cells with Electrostatic Force Microscopy

NASA Astrophysics Data System (ADS)

Cox, Phillip Alexander

With power conversion efficiencies on the rise, organic photovoltaics (OPVs) hold promise as a next-generation thin-film solar technology. However, both device performance and stability are inextricably linked to local film structure. Methods capable of probing nanoscale electronic properties as a function of film structure are thus a crucial component of the rational design of efficient and robust devices. This dissertation describes the use of three scanning probe methods for studying local charge generation and photodegradation in polymer/fullerene solar cells. First, we show that time-resolved electrostatic force microscopy (trEFM) is capable of resolving local photocurrent from sub-bandgap excitation down to attoampere level currents, a result unattainable by traditional contact-mode methods. We find that the local charging rates measured with trEFM are proportional to external quantum efficiency (EQE) measurements made on completed devices, making trEFM images equivalent to local EQE maps across the entire solar spectrum. For both phase-segregated and well-mixed MDMO-PPV:PCBM film morphologies, we show that the local distribution of photocurrent is invariant to excitation wavelength, providing local evidence for the controversial result that the probability of generating separated charge carriers does not depend on whether excitons are formed at the singlet state or charge transfer state. Next, we describe how local dissipation imaging can be performed with commercially-available frequency-modulated electrostatic force microscopy (FM-EFM) and show that dissipation maps are highly sensitive to photo-oxidative effects in organic semiconductors. We show that photo-oxidation induced changes in cantilever energy dissipation are proportional to device performance losses. We further develop dissipation imaging by implementing ringdown imaging, which directly measures the quality factor of the cantilever, enabling quantitative dissipation mapping. Using organic photovoltaic materials as a testbed, we study macroscopic device degradation as a function of photooxidation for three different film morphologies. According to EQE measurements, we find that the stability of the macroscopic devices is very sensitive to processing conditions, with films processed with the solvent additive 1,8-diiodooctane being the most stable. At the microscopic level, we compare the evolution of cantilever power dissipation as a function of photochemical degradation for three different polymer/fullerene blend morphologies, and show that the evolution of local power dissipation correlates with device stability. Lastly, we show that cantilever power dissipation increases more rapidly over large fullerene aggregates than in well-mixed polymer/fullerene regions, suggesting that local photochemistry on the fullerene contributes strongly to the dissipation signal.

Enhancing Photovoltaic Performance Using Broadband Luminescent Down-Shifting by Combining Multiple Species of Eu-Doped Silicate Phosphors

PubMed Central

Shen, Yu-Tang; Liu, Jheng-Jie; You, Bang-Jin; Ho, Chun-Hung

2017-01-01

This paper demonstrates the application of a broadband luminescent downshifting (LDS) layer with multiple species of europium (Eu)-doped silicate phosphors using spin-on film technique to enhance the photovoltaic efficiency of crystalline silicon solar cells. The surface morphology of the deposited layer was examined using a scanning electron microscope (SEM). The chemical composition of the Eu-doped silicate phosphors was analyzed using energy-dispersive X-ray spectroscopy (EDS). The fluorescence emission of the Eu-doped silicate phosphors was characterized using photoluminescence (PL) measurements at room temperature. We also compared the optical reflectance and external quantum efficiency (EQE) response of cells with combinations of various Eu-doped phosphors species. The cell coated with two species of Eu-doped phosphors achieved a conversion efficiency enhancement (∆η) of 19.39%, far exceeding the ∆η = 15.08% of the cell with one species of Eu-doped phosphors and the ∆η = 8.51% of the reference cell with the same silicate layer without Eu-doped phosphors. PMID:29065487

Numerical analysis and optimization of Cu2O/TiO2, CuO/TiO2, heterojunction solar cells using SCAPS

NASA Astrophysics Data System (ADS)

Sawicka-Chudy, Paulina; Sibiński, Maciej; Wisz, Grzegorz; Rybak-Wilusz, Elżbieta; Cholewa, Marian

2018-05-01

In the presented work, the Cu2O/TiO2 and CuO/TiO2 heterojunction solar cells have been analyzed by the help of Solar Cell Capacitance Simulator (SCAPS). The effects of various layer parameters like thickness and defect density on the cell performance have been studied in details. Numerical analysis showed how the absorber (CuO, Cu2O) and buffer (TiO2) layers thickness influence the short-circuit current density (Jsc) and efficiency (η) of solar cells. Optimized solar cell structures of Cu2O/TiO2 and CuO/TiO2 showed a potential efficiency of ∼9 and ∼23%, respectively, under the AM1.5G spectrum. Additionally, external quantum efficiency (EQE) curves of the CuO/TiO2 and Cu2O/TiO2 solar cells for various layers thickness of TiO2 were calculated and the optical band gap (Eg) for CuO and Cu2O was obtained. Finally, we examined the effects of defect density on the photovoltaic parameters.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

Extraction of minority carrier diffusion length of MWIR Type-II superlattice nBp detector

NASA Astrophysics Data System (ADS)

Taghipour, Zahra; Kazemi, Alireza; Myers, Stephen; Wijewarnasuriya, Priyalal; Mathews, Sen; Steenbergen, Elizabeth H.; Morath, Christian; Cowan, Vincent M.; Ariyawansa, Gamini; Scheihing, John; Krishna, Sanjay

2017-08-01

We present a model for the spectral external quantum efficiency (EQE) to extract the minority carrier diffusion length (Ln) of a unipolar nBp InAs/GaSb Type-II superlattice (T2SL) mid-wave infrared (MWIR) detector. The detector consists of a 4 μm thick p-doped 10ML InAs/10ML GaSb SL absorber with a 50% cut-off wavelength of 5 μm at 80 K and zero bias. The n-type doped InAs/AlSb SL barrier in the structure was included to reduce the GR dark current. By fitting the experimentally measured EQE data to the theoretically calculated QE based on the solution of the drift-diffusion equation, the p-type absorber was found the have Ln = 10 +/- 0.5 μm at 80K, and Ln = 12 +/- 0.5 μm at 120K and 150K. We performed the absorption coefficient measurement at different temperatures of interest. Also, we estimated the reduced background concentration and the built-in potential by utilizing a capacitance-voltage measurement technique. We used time-resolved-photoluminescence (TRPL) to determine the lifetime at 80K. With the result of the model and the lifetime measurement, we calculated the diffusion coefficient and the mobility in the T2SL detector at various temperatures. Also, we studied the behavior of different dark current mechanisms by fitting the experimentally measured and simulated dark current density under different operating temperatures and biases.

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

PubMed

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

PubMed

Wu, Jun-Yi; Chen, Show-An

2018-02-07

We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency

NASA Astrophysics Data System (ADS)

Ibdah, Abdel-Rahman; Koirala, Prakash; Aryal, Puruswottam; Pradhan, Puja; Marsillac, Sylvain; Rockett, Angus A.; Podraza, Nikolas J.; Collins, Robert W.

2017-11-01

Complete polycrystalline thin-film photovoltaic (PV) devices employing CuIn1-xGaxSe2/CdS and CdS/CdTe heterojunctions have been studied by ex situ spectroscopic ellipsometry (SE). In this study, layer thicknesses have been extracted along with photon energy independent parameters such as compositions that describe the dielectric function spectra ε(E) of the individual layers. For accurate ex situ SE analysis of these PV devices, a database of ε(E) spectra is required for all thin film component materials used in each of the two absorber technologies. When possible, database measurements are performed by applying SE in situ immediately after deposition of the thin film materials and after cooling to room temperature in order to avoid oxidation and surface contamination. Determination of ε(E) from the resulting in situ SE data requires structural information that can be obtained from analysis of SE data acquired in real time during the deposition process. From the results of ex situ analysis of the complete CuIn1-xGaxSe2 (CIGS) and CdTe PV devices, the deduced layer thicknesses in combination with the parameters describing ε(E) can be employed in further studies that simulate the external quantum efficiency (EQE) spectra of the devices. These simulations have been performed here by assuming that all electron-hole pairs generated within the active layers, i.e. layers incorporating a dominant absorber component (either CIGS or CdTe), are separated and collected. The active layers may include not only the bulk absorber but also window and back contact interface layers, and individual current contributions from these layers have been determined in the simulations. In addition, the ex situ SE analysis results enable calculation of the absorbance spectra for the inactive layers and the overall reflectance spectra, which lead to quantification of all optical losses in terms of a current density deficit. Mapping SE can be performed given the high speed of multichannel ellipsometers employing array detection, and the resulting EQE simulation capability has wide applications in predicting large area PV module output. The ultimate goal is an on-line capability that enables prediction of PV sub-cell current output as early as possible in the production process.

Improved performance of photoconductive gain hybrid UV detector by trap state engineering of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Azadinia, M.; Fathollahi, M. R.; Mosadegh, M.; Boroumand, F. A.; Mohajerani, E.

2017-10-01

With the purpose of examining the impact of donor polymer on the performance of nanocomposite photodetectors (PDs) and to better understand the underlying physics, different wide-bandgap semiconducting polymers, poly(N-vinylcarbazole), poly(9, 9-di-n-octylfluorenyl-2, 7-diyl) , and [9,9'-dioctyl-fluorene-2,7-diyl]-copoly[diphenyl-p-tolyl-amine-4,4'-diyl] (BFE), are mixed with ZnO nanoparticles (NPs) to fabricate hybrid UV PDs. Three different polymer matrix nanocomposites were investigated that differ in the electron-trap depth in the nanocomposite and also the carrier tunneling energy at the interface. All the fabricated PDs exhibit strong photoconductive gain characteristics which can be attributed to trapped electron accumulation and band bending at the cathode interface. Experimental results show that the manipulation of the photoactive nanocomposite improves the PD properties simultaneously, namely, the external quantum efficiency (EQE, ˜104%), the maximum detectivity (D*, ˜1013 Jones), and the linear dynamic range (LDR, ˜85 dB). In addition, the gain bandwidth product of the device improves more than 50 times. Furthermore, the effect of the photogenerated carrier profile within the active layer is investigated experimentally by changing the direction of the incident light using a transparent cathode. Interestingly, under illumination through the Al cathode, faster photocurrent response, wider spectral range toward the deep UV region, and higher EQE in relatively low voltages are observed. These considerations might provide a general strategy to fabricate low-cost photoconductive PDs with a reasonably good combination of gain, response speed, LDR, and selectivity.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi

2014-02-15

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-02-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR -Vbias) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR -Vbias for Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR -Vbias measurements. The profile of SR-Vbias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

Indium-tin-oxide nanowhiskers crystalline silicon photovoltaics combining micro- and nano-scale surface textures

NASA Astrophysics Data System (ADS)

Chang, C. H.; Hsu, M. H.; Chang, W. L.; Sun, W. C.; Yu, Peichen

2011-02-01

In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The combined surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on passivated, micro-grooved silicon solar cells using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared, which is optically equivalent to a stack of two dielectric thin-films with step- and graded- refractive index profiles. The ITO nanowhiskers provide broadband anti-reflective properties (R<5%) in the wavelength range of 350-1100nm. In comparison with conventional Si solar cell, the combined surface texture solar cell shows higher external quantum efficiency (EQE) in the range of 700-1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). Furthermore, the nano-whiskers also provide strong forward scattering for ultraviolet and visible light, favorable in thin-wafer silicon photovoltaics to increase the optical absorption path.

Efficient, inkjet-printed TADF-OLEDs with an ultra-soluble NHetPHOS complex

NASA Astrophysics Data System (ADS)

Verma, Anand; Zink, Daniel M.; Fléchon, Charlotte; Leganés Carballo, Jaime; Flügge, Harald; Navarro, José M.; Baumann, Thomas; Volz, Daniel

2016-03-01

Using printed organic light-emitting diodes (OLEDs) for lighting, smart-packaging and other mass-market applications has remained a dream since the first working OLED devices were demonstrated in the late 1980s. The realization of this long-term goal is hindered by the very low abundance of iridium and problems when using low-cost wet chemical production processes. Abundant, solution-processable Cu(I) complexes promise to lower the cost of OLEDs. A new copper iodide NHetPHOS emitter was prepared and characterized in solid state with photoluminescence spectroscopy and UV photoelectron spectroscopy under ambient conditions. The photoluminescence quantum efficiency was determined as 92 ± 5 % in a thin film with yellowish-green emission centered around 550 nm. This puts the material on par with the most efficient copper complexes known so far. The new compound showed superior solubility in non-polar solvents, which allowed for the fabrication of an inkjet-printed OLED device from a decalin-based ink formulation. The emission layer could be processed under ambient conditions and was annealed under air. In a very simple stack architecture, efficiency values up to 45 cd A-1 corresponding to 13.9 ± 1.9 % EQE were achieved. These promising results open the door to printed, large-scale OLED devices with abundant copper emitters.

A novel bipolar phosphorescent host for highly efficient deep-red OLEDs at a wide luminance range of 1000-10 000 cd m(-2).

PubMed

Feng, Yansong; Li, Ping; Zhuang, Xuming; Ye, Kaiqi; Peng, Tai; Liu, Yu; Wang, Yue

2015-08-14

A novel phosphorescent host FPYPCA possessing the bipolar charge transporting ability realizes the most efficient deep-red PhOLED, which maintains very high-level EQEs of >23% at rather a high and wide luminance range of 1000-10 000 cd m(-2).

Highly efficient inverted organic light emitting diodes by inserting a zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite interfacial layer

NASA Astrophysics Data System (ADS)

Kaçar, Rifat; Pıravadılı Mucur, Selin; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

2017-06-01

The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized. For orange-red emissive MEH-PPV based IBOLEDs, a high power efficiency of 6.1 lm W-1 at a luminance of 1000 cd m-2 has been achieved. Notably, the external quantum efficiency (EQE) increased from 0.1 to 4.8% and the current efficiency (CE) increased from 0.2 to 8.7 cd A-1 with rise in luminance (L) from 1000 to above 10 000 cd m-2 levels when compared to that of pristine ZnO-based devices. An identical device architecture containing a ZnO:PEI NC layer has also been used to successfully fabricate green and blue emissive IBOLEDs. The significant enhancement in the inverted device performance, in terms of luminance and efficiency, is attributed to a good energy-level alignment between the cathode/organic interface which leads to effective carrier balance, resulting in efficient radiative-recombination.

Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

NASA Astrophysics Data System (ADS)

Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

2013-05-01

The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.

PubMed

Liu, Mengling; Zhao, Jie; Zhou, Shengjun; Gao, Yilin; Hu, Jinfeng; Liu, Xingtong; Ding, Xinghuo

2018-06-21

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits.

Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

NASA Astrophysics Data System (ADS)

Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

2015-01-01

Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

High-Performance Organic Light-Emitting Diode with Substitutionally Boron-Doped Graphene Anode.

PubMed

Wu, Tien-Lin; Yeh, Chao-Hui; Hsiao, Wen-Ting; Huang, Pei-Yun; Huang, Min-Jie; Chiang, Yen-Hsin; Cheng, Chien-Hong; Liu, Rai-Shung; Chiu, Po-Wen

2017-05-03

The hole-injection barrier between the anode and the hole-injection layer (HIL) is of critical importance to determine the device performance of organic light-emitting diodes (OLEDs). Here, we report on a record-high external quantum efficiency (EQE) (24.6% in green phosphorescence) of OLEDs fabricated on both rigid and flexible substrates, with the performance enhanced by the use of nearly defect-free and high-mobility boron-doped graphene as an effective anode and hexaazatriphenylene hexacarbonitrile as a new type of HIL. This new structure outperforms the existing graphene-based OLEDs, in which MoO 3 , AuCl 3 , or bis(trifluoromethanesulfonyl)amide are typically used as a doping source for the p-type graphene. The improvement of the OLED performance is attributed mainly to the appreciable increase of the hole conductivity in the nearly defect-free boron-doped monolayer graphene, along with the high work function achieved by the use of a newly developed hydrocarbon precursor containing boron in the graphene growth by chemical vapor deposition.

UV Degradation and Recovery of Perovskite Solar Cells

PubMed Central

Lee, Sang-Won; Kim, Seongtak; Bae, Soohyun; Cho, Kyungjin; Chung, Taewon; Mundt, Laura E.; Lee, Seunghun; Park, Sungeun; Park, Hyomin; Schubert, Martin C.; Glunz, Stefan W.; Ko, Yohan; Jun, Yongseok; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-01-01

Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (Jsc) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The Jsc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI2 which is generated by the decomposition of perovskite material. PMID:27909338

UV Degradation and Recovery of Perovskite Solar Cells.

PubMed

Lee, Sang-Won; Kim, Seongtak; Bae, Soohyun; Cho, Kyungjin; Chung, Taewon; Mundt, Laura E; Lee, Seunghun; Park, Sungeun; Park, Hyomin; Schubert, Martin C; Glunz, Stefan W; Ko, Yohan; Jun, Yongseok; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-12-02

Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (J sc ) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The J sc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI 2 which is generated by the decomposition of perovskite material.

Highly Simplified Tandem Organic Light-Emitting Devices Incorporating a Green Phosphorescence Ultrathin Emitter within a Novel Interface Exciplex for High Efficiency.

PubMed

Xu, Ting; Zhou, Jun-Gui; Huang, Chen-Chao; Zhang, Lei; Fung, Man-Keung; Murtaza, Imran; Meng, Hong; Liao, Liang-Sheng

2017-03-29

Herein we report a novel design philosophy of tandem OLEDs incorporating a doping-free green phosphorescent bis[2-(2-pyridinyl-N)phenyl-C](acetylacetonato)iridium(III) (Ir(ppy) 2 (acac)) as an ultrathin emissive layer (UEML) into a novel interface-exciplex-forming structure of 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and 1,3,5-tri(p-pyrid-3-yl-phenyl)benzene (TmPyPB). Particularly, relatively low working voltage and remarkable efficiency are achieved and the designed tandem OLEDs exhibit a peak current efficiency of 135.74 cd/A (EQE = 36.85%) which is two times higher than 66.2 cd/A (EQE = 17.97%) of the device with a single emitter unit. This might be one of the highest efficiencies of OLEDs applying ultrathin emitters without light extraction. Moreover, with the proposed structure, the color gamut of the displays can be effectively increased from 76% to 82% NTSC if the same red and blue emissions as those in the NTSC are applied. A novel form of harmonious fusion among interface exciplex, UEML, and tandem structure is successfully realized, which sheds light on further development of ideal OLED structure with high efficiency, simplified fabrication, low power consumption, low cost, and improved color gamut, simultaneously.

A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

NASA Astrophysics Data System (ADS)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

Achieving Extreme Utilization of Excitons by an Efficient Sandwich-Type Emissive Layer Architecture for Reduced Efficiency Roll-Off and Improved Operational Stability in Organic Light-Emitting Diodes.

PubMed

Wu, Zhongbin; Sun, Ning; Zhu, Liping; Sun, Hengda; Wang, Jiaxiu; Yang, Dezhi; Qiao, Xianfeng; Chen, Jiangshan; Alshehri, Saad M; Ahamad, Tansir; Ma, Dongge

2016-02-10

It has been demonstrated that the efficiency roll-off is generally caused by the accumulation of excitons or charge carriers, which is intimately related to the emissive layer (EML) architecture in organic light-emitting diodes (OLEDs). In this article, an efficient sandwich-type EML structure with a mixed-host EML sandwiched between two single-host EMLs was designed to eliminate this accumulation, thus simultaneously achieving high efficiency, low efficiency roll-off and good operational stability in the resulting OLEDs. The devices show excellent electroluminescence performances, realizing a maximum external quantum efficiency (EQE) of 24.6% with a maximum power efficiency of 105.6 lm W(-1) and a maximum current efficiency of 93.5 cd A(-1). At the high brightness of 5,000 cd m(-2), they still remain as high as 23.3%, 71.1 lm W(-1), and 88.3 cd A(-1), respectively. And, the device lifetime is up to 2000 h at initial luminance of 1000 cd m(-2), which is significantly higher than that of compared devices with conventional EML structures. The improvement mechanism is systematically studied by the dependence of the exciton distribution in EML and the exciton quenching processes. It can be seen that the utilization of the efficient sandwich-type EML broadens the recombination zone width, thus greatly reducing the exciton quenching and increasing the probability of the exciton recombination. It is believed that the design concept provides a new avenue for us to achieve high-performance OLEDs.

A new way towards high-efficiency thermally activated delayed fluorescence devices via external heavy-atom effect

NASA Astrophysics Data System (ADS)

Zhang, Wenzhi; Jin, Jiangjiang; Huang, Zhi; Zhuang, Shaoqing; Wang, Lei

2016-07-01

Thermally activated delayed fluorescence (TADF) mechanism is a significant method that enables the harvesting of both triplet and singlet excitons for emission. However, up to now most efforts have been devoted to dealing with the relation between singlet-triplet splitting (ΔEST) and fluorescence efficiency, while the significance of spin-orbit coupling (SOC) is usually ignored. In this contribution, a new method is developed to realize high-efficiency TADF-based devices through simple device-structure optimizations. By inserting an ultrathin external heavy-atom (EHA) perturber layer in a desired manner, it provides useful means of accelerating the T1 → S1 reverse intersystem crossing (RISC) in TADF molecules without affecting the corresponding S1 → T1 process heavily. Furthermore, this strategy also promotes the utilization of host triplets through Förster mechanism during host → guest energy transfer (ET) processes, which helps to get rid of the solely dependence upon Dexter mechanism. Based on this strategy, we have successfully raised the external quantum efficiency (EQE) in 4CzPN-based devices by nearly 38% in comparison to control devices. These findings provide keen insights into the role of EHA played in TADF-based devices, offering valuable guidelines for utilizing certain TADF dyes which possess high radiative transition rate but relatively inefficient RISC.

Design Approaches for Enhancing Photovoltaic Performance of Silicon Solar Cells Sensitized by Proximal Nanocrystalline Quantum Dots

NASA Astrophysics Data System (ADS)

Shafiq, Natis

Energy transfer (ET) based sensitization of silicon (Si) using proximal nanocrystal quantum dots (NQDs) has been studied extensively in recent years as a means to develop thin and flexible Si based solar cells. The driving force for this research activity is a reduction in materials cost. To date, the main method for determining the role of ET in sensitizing Si has been optical spectroscopic studies. The quantitative contribution from two modes of ET (namely, nonradiative and radiative) has been reported using time-resolved photoluminescence (TRPL) spectroscopy coupled with extensive theoretical modelling. Thus, optical techniques have established the potential for utilizing ET based sensitization of Si as a feasible way to develop novel NQD-Si hybrid solar cells. However, the ultimate measure of the efficiency of ET-based mechanisms is the generation of electron-hole pairs by the impinging photons. It is therefore important to perform electrical measurements. However, only a couple of studies have attempted electrical quantification of ET modes. A few studies have focused on photocurrent measurements, without considering industrially relevant photovoltaic (PV) systems. Therefore, there is a need to develop a systematic approach for the electrical quantification of ET-generated charges and to help engineer new PV architectures optimized for harnessing the full advantages of ET mechanisms. Within this context, the work presented in this dissertation aims to develop an experimental testing protocol that can be applied to different PV structures for quantifying ET contributions from electrical measurements. We fabricated bulk Si solar cells (SCs) as a test structure and utilized CdSe/ZnS NQDs for ET based sensitization. The NQD-bulk Si hybrid devices showed ˜30% PV enhancement after NQD deposition. We measured external quantum efficiency (EQE) of these devices to quantify ET-generated charges. Reflectance measurements were also performed to decouple contributions of intrinsic optical effects (i.e., anti-reflection) from NQD mediated ET processes. Our analysis indicates that the contribution of ET-generated charges cannot be detected by EQE measurements. Instead, changes in the optical properties (i.e., anti-reflection property) due to the NQD layer are found to be the primary source of the photocurrent enhancement. Based on this finding, we propose to minimize bulk Si absorption by using an ultrathin (˜300 nm) Si PV architecture which should enable measurements of ET-generated charges. We describe an optimized process flow for fabricating such ultrathin Si devices. The devices fabricated by this method behave like photo-detectors and show enhanced sensitivity under 1 Sun AM1.5G illumination. The geometry and process flow of these devices make it possible to incorporate NQDs for sensitization. Overall, this dissertation provides a protocol for the quantification of ET-generated charges and documents an optimized process flow for the development of an ultrathin Si solar cells.

Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

PubMed Central

Ullah, Mujeeb; Armin, Ardalan; Tandy, Kristen; Yambem, Soniya D.; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2015-01-01

Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications. PMID:25743444

Highly efficient phosphorescent, TADF, and fluorescent OLEDs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jang-Joo; Kim, Kwon-Hyeon; Moon, Chang-Ki; Shin, Hyun

2016-09-01

High efficiency OLEDs based on phosphorescent, thermally activated delayed fluorescent (TADF) and fluorescent emitters will be presented. We will show that EQEs over 60% is achievable if OLEDs are fabricated using organic semiconductors with the refractive indices of 1.5 and fully horizontal emitting dipoles without any extra light extracting structure. We will also show that reverse intersystem crossing RISC rate plays an important role to reduce the efficiency roll-off in efficient TADF and fluorescent OLEDs and a couple to methods will be presented to increase the RISC rate in the devices.

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

PubMed

Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

2010-01-04

A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Nanostructured Ag-zeolite Composites as Luminescence-based Humidity Sensors.

PubMed

Coutino-Gonzalez, Eduardo; Baekelant, Wouter; Dieu, Bjorn; Roeffaers, Maarten B J; Hofkens, Johan

2016-11-15

Small silver clusters confined inside zeolite matrices have recently emerged as a novel type of highly luminescent materials. Their emission has high external quantum efficiencies (EQE) and spans the whole visible spectrum. It has been recently reported that the UV excited luminescence of partially Li-exchanged sodium Linde type A zeolites [LTA(Na)] containing luminescent silver clusters can be controlled by adjusting the water content of the zeolite. These samples showed a dynamic change in their emission color from blue to green and yellow upon an increase of the hydration level of the zeolite, showing the great potential that these materials can have as luminescence-based humidity sensors at the macro and micro scale. Here, we describe the detailed procedure to fabricate a humidity sensor prototype using silver-exchanged zeolite composites. The sensor is produced by suspending the luminescent Ag-zeolites in an aqueous solution of polyethylenimine (PEI) to subsequently deposit a film of the material onto a quartz plate. The coated plate is subjected to several hydration/dehydration cycles to show the functionality of the sensing film.

Nanostructured Ag-zeolite Composites as Luminescence-based Humidity Sensors

PubMed Central

Dieu, Bjorn; Roeffaers, Maarten B.J.; Hofkens, Johan

2016-01-01

Small silver clusters confined inside zeolite matrices have recently emerged as a novel type of highly luminescent materials. Their emission has high external quantum efficiencies (EQE) and spans the whole visible spectrum. It has been recently reported that the UV excited luminescence of partially Li-exchanged sodium Linde type A zeolites [LTA(Na)] containing luminescent silver clusters can be controlled by adjusting the water content of the zeolite. These samples showed a dynamic change in their emission color from blue to green and yellow upon an increase of the hydration level of the zeolite, showing the great potential that these materials can have as luminescence-based humidity sensors at the macro and micro scale. Here, we describe the detailed procedure to fabricate a humidity sensor prototype using silver-exchanged zeolite composites. The sensor is produced by suspending the luminescent Ag-zeolites in an aqueous solution of polyethylenimine (PEI) to subsequently deposit a film of the material onto a quartz plate. The coated plate is subjected to several hydration/dehydration cycles to show the functionality of the sensing film. PMID:27911397

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

Excellent deep-blue emitting materials based on anthracene derivatives for non-doped organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Wang, Zhiqiang; Liu, Wei; Xu, Chen; Ji, Baoming; Zheng, Caijun; Zhang, Xiaohong

2016-08-01

Two deep-blue emitting materials 2-tert-butyl-9,10-bis(3,5-diphenylphenyl)anthracene (An-1) and 2-tert-butyl-9,10-bis(3,5-diphenylbiphenyl-4‧-yl)anthracene (An-2) were successfully synthesized by the Pd-catalyzed Suzuki coupling reaction. Both of these compounds have high thermal stabilities and show strong deep-blue emission as solid-state film as well as in n-hexane solution. Two non-doped electroluminescent devices employing An-1 and An-2 as emitting layers were fabricated by vacuum vapor deposition. These devices exhibited highly efficient and stable deep-blue emission with high color purity. The CIE coordinate and maximum EQE of An-1 based device are 4.2% and (0.16, 0.06), respectively. Device based on An-2 achieved a maximum EQE of 4.0% and a CIE coordinate of (0.16, 0.10).

Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator.

PubMed

Akama, Toshiki; Okita, Wakana; Nagai, Reito; Li, Chao; Kaneko, Toshiro; Kato, Toshiaki

2017-09-20

Few-layered transition metal dichalcogenides (TMDs) are known as true two-dimensional materials, with excellent semiconducting properties and strong light-matter interaction. Thus, TMDs are attractive materials for semitransparent and flexible solar cells for use in various applications. Hoewver, despite the recent progress, the development of a scalable method to fabricate semitransparent and flexible solar cells with mono- or few-layered TMDs remains a crucial challenge. Here, we show easy and scalable fabrication of a few-layered TMD solar cell using a Schottky-type configuration to obtain a power conversion efficiency (PCE) of approximately 0.7%, which is the highest value reported with few-layered TMDs. Clear power generation was also observed for a device fabricated on a large SiO 2 and flexible substrate, demonstrating that our method has high potential for scalable production. In addition, systematic investigation revealed that the PCE and external quantum efficiency (EQE) strongly depended on the type of photogenerated excitons (A, B, and C) because of different carrier dynamics. Because high solar cell performance along with excellent scalability can be achieved through the proposed process, our fabrication method will contribute to accelerating the industrial use of TMDs as semitransparent and flexible solar cells.

Basic aspects for improving the energy conversion efficiency of hetero-junction organic photovoltaic cells.

PubMed

Ryuzaki, Sou; Onoe, Jun

2013-01-01

Hetero-junction organic photovoltaic (OPV) cells consisting of donor (D) and acceptor (A) layers have been regarded as next-generation PV cells, because of their fascinating advantages, such as lightweight, low fabrication cost, resource free, and flexibility, when compared to those of conventional PV cells based on silicon and semiconductor compounds. However, the power conversion efficiency (η) of the OPV cells has been still around 8%, though more than 10% efficiency has been required for their practical use. To fully optimize these OPV cells, it is necessary that the low mobility of carriers/excitons in the OPV cells and the open circuit voltage (V OC), of which origin has not been understood well, should be improved. In this review, we address an improvement of the mobility of carriers/excitons by controlling the crystal structure of a donor layer and address how to increase the V OC for zinc octaethylporphyrin [Zn(OEP)]/C60 hetero-junction OPV cells [ITO/Zn(OEP)/C60/Al]. It was found that crystallization of Zn(OEP) films increases the number of inter-molecular charge transfer (IMCT) excitons and enlarges the mobility of carriers and IMCT excitons, thus significantly improving the external quantum efficiency (EQE) under illumination of the photoabsorption band due to the IMCT excitons. Conversely, charge accumulation of photo-generated carriers in the vicinity of the donor/acceptor (D/A) interface was found to play a key role in determining the V OC for the OPV cells.

Basic aspects for improving the energy conversion efficiency of hetero-junction organic photovoltaic cells

PubMed Central

Ryuzaki, Sou; Onoe, Jun

2013-01-01

Hetero-junction organic photovoltaic (OPV) cells consisting of donor (D) and acceptor (A) layers have been regarded as next-generation PV cells, because of their fascinating advantages, such as lightweight, low fabrication cost, resource free, and flexibility, when compared to those of conventional PV cells based on silicon and semiconductor compounds. However, the power conversion efficiency (η) of the OPV cells has been still around 8%, though more than 10% efficiency has been required for their practical use. To fully optimize these OPV cells, it is necessary that the low mobility of carriers/excitons in the OPV cells and the open circuit voltage (V OC), of which origin has not been understood well, should be improved. In this review, we address an improvement of the mobility of carriers/excitons by controlling the crystal structure of a donor layer and address how to increase the V OC for zinc octaethylporphyrin [Zn(OEP)]/C60 hetero-junction OPV cells [ITO/Zn(OEP)/C60/Al]. It was found that crystallization of Zn(OEP) films increases the number of inter-molecular charge transfer (IMCT) excitons and enlarges the mobility of carriers and IMCT excitons, thus significantly improving the external quantum efficiency (EQE) under illumination of the photoabsorption band due to the IMCT excitons. Conversely, charge accumulation of photo-generated carriers in the vicinity of the donor/acceptor (D/A) interface was found to play a key role in determining the V OC for the OPV cells. PMID:23853702

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

Fabrication and optimization of phosphorescent organic light emitting diodes for solid-state lighting applications

NASA Astrophysics Data System (ADS)

Bhansali, Unnat S.

Organic Light Emitting Diodes (OLEDs) have made tremendous progress over the last decade and are under consideration for use as solid-state lighting sources to replace the existing incandescent and fluorescent technology. Use of metal-organic phosphorescent complexes as bright emitters and efficient charge transporting organic semiconductors has resulted in OLEDs with internal quantum efficiency ˜ 100% and power efficiency ˜100 lm/W (green OLEDs) at 1000 cd/m2. For lighting applications, white OLEDs (WOLEDs) are required to have a color rendering index (CRI) > 80, correlated color temperature (CCT) (2700 ≤ WOLEDs ≤ 6500 °K), power efficiency > 100 lm/W and a lifetime > 25,000 hrs (at 70% of its original lumen value) at a brightness of 1000 cd/m2. Typically, high CRIs and high power efficiencies are obtained by either a combination of a blue fluorescent emitter with green and red phosphorescent emitters or a stack of blue, green and red phosphorescent emitters doped in a host material. In this work, we implement a single-emitter WOLEDs (SWOLEDs) approach by using monomer (blue) and broad excimer emissions (green and orange) from a self-sensitizing Pt-based phosphorescent complex, designed and synthesized by Prof. M.A. Omary's group. We have optimized and demonstrated high efficiency turquoise-blue OLEDs from monomer emission of Pt(ptp)2-bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) doped in a phosphine-oxide based host molecule and an electron transport molecule. The device peak power efficiency and external quantum efficiency were maintained >40 lm/W and >11%, respectively throughout the wide range of dopant concentrations (1% to 10%). A monotonic increase in the excimer/monomer emission intensity ratio is observed at the higher doping concentrations within 1%-10%, causing a small green-shift in the color. The peak performance of 60 -- 70 lm/W for the best optimized device represents the highest power efficiency known to date for blue OLEDs. Typically, the commercially available and most commonly used Ir-based emitters suffer from triplet-triplet annihilation and self-quenching issues due to their long triplet excited lifetimes (˜1 mus). The performance of these OLEDs is hence very sensitive to the dopant concentration. On the other hand, Pt(ptp)2 is a self-sensitizing, fast phosphor with triplet lifetimes ~100 ns and near unity quantum yield at room temperature. We have demonstrated high peak efficiency yellow OLEDs from undoped (neat) thin films of the emitter complex (>30 lm/W) and near 100% Internal Quantum Efficiency (IQE) with faster radiative recombination rate than doped films, thus proving the existence of self-sensitization in electroluminescence. We have successfully combined the monomer emission (low dopant concentrations) and excimer emission of Pt(ptp)2 to achieve high CRI SWOLEDs using a 2-layer and a 3-layer graded-doping design. The best color metrics were a CRI=62 and a CCT = 3452 K for a WOLED with the highest power efficiency = 31.3 lm/W and EQE = 17.4%, representing excellent performance for single-emitter WOLEDs.

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

2017-07-01

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.

Remote Steric Effect as a Facile Strategy for Improving the Efficiency of Exciplex-Based OLEDs.

PubMed

Hung, Wen-Yi; Wang, Ting-Chih; Chiang, Pin-Yi; Peng, Bo-Ji; Wong, Ken-Tsung

2017-03-01

This work reports a new strategy of introducing remote steric effect onto the electron donor for giving the better performance of the exciplex-based organic light-emitting device (OLED). The bulky triphenylsilyl group (SiPh 3 ) was introduced onto the fluorene bridge of 4,4'-(9H-fluorene-9,9-diyl)bis(N,N-di-p-tolylaniline) (DTAF) to create remote steric interactions for increasing the possibility of effective contacts between electron-donating chromophores and acceptor molecules, rendering the resulting exciplex to have a higher photoluminescence quantum yield (PLQY). The green exciplex device based on DSDTAF:3N-T2T (1:1) as an emitting layer exhibits a low turn-on voltage of 2.0 V, high maximum efficiencies (13.2%, 42.9 cd A -1 , 45.5 lm W -1 ), which are higher than the device employed DTAF (without SiPh 3 groups) (11.6%, 35.3 cd A -1 , 41.3 lm W -1 ) as donor under the same device structure. This strategy was further examined for blue exciplex, where the EQE was enhanced from 9.5% to 12.5% as the electron acceptor PO-T2T mixed with a tert-butyl group substituted carbazole-based donor (CPTBF) as the emitting exciplex in device. This strategy is simple and useful for developing high performance exciplex OLEDs.

Singlet fission/silicon solar cell exceeding 100% EQE (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pazos, Luis M.; Lee, Jumin; Kirch, Anton; Tabachnyk, Maxim; Friend, Richard H.; Ehrler, Bruno

2016-09-01

Current matching limits the commercialization of tandem solar cells due to their instability over spectral changes, leading to the need of using solar concentrators and trackers to keep the spectrum stable. We demonstrate that voltage-matched systems show far higher performance over spectral changes; caused by clouds, dust and other variations in atmospheric conditions. Singlet fission is a process in organic semiconductors which has shown very efficient, 200%, down-conversion yield and the generated excitations are long-lived, ideal for solar cells. As a result, the number of publications has grown exponentially in the past 5 years. Yet, so far no one has achieved to combine singlet fission with most low bandgap semiconductors, including crystalline silicon, the dominating solar cell material with a 90% share of the PV Market. Here we show that singlet fission can facilitate the fabrication of voltage-matched systems, opening a simple design route for the effective implementation of down-conversion in commercially available photovoltaic technologies, with no modification of the electronic circuitry of such. The implemention of singlet fission is achieved simply by decoupling the fabrication of the individual subcells. For this demonstration we used an ITO/PEDOT/P3HT/Pentacene/C60/Ag wide-bandgap subcell, and a commercial silicon solar cell as the low-bandgap component. We show that the combination of the two leads to the first tandem silicon solar cell which exceeds 100% external quantum efficiency.

Design and fabrication of six-volt vertically-stacked GaAs photovoltaic power converter

PubMed Central

Zhao, Yongming; Sun, Yurun; He, Yang; Yu, Shuzhen; Dong, Jianrong

2016-01-01

A six-volt vertically-stacked, high current GaAs photovoltaic power converter (PPC) has been designed and fabricated to produce output power over 1 W under monochromatic illumination. An N++-GaAs/P++-AlGaAs tunnel junctions (TJs) structure has been used for connecting each sub-cell in this vertically-stacked PPC device. The thickness of the each GaAs sub-cell has been derived based on the calculation of absorption depth of photons with a wavelength of 808 nm using absorption coefficient obtained from ellipsometry measurements. The devices were characterized under non-uniform CW laser illumination at 808 nm with incident power up to 4.1 W. A maximum conversion efficiency of 50.2% was achieved at 0.3 W under non-uniform (coupled in optical fiber) monochromatic illumination, dropping to 42.5% at 4.1 W. The operating voltage at the maximum power point is 5.5–6.0 V, depending on the incident laser power, and an output electrical power output of 1.3 W can be extracted at a laser power of 2.9 W and the maximum electrical power output amounts to 1.72 W. The external quantum efficiency (EQE) measurement indicates that the performance of PPC can be further improved by refining the design of the thickness of sub-cells and improving TJs. PMID:27901079

Performances and impedance spectroscopy of Small-molecule bulk heterojunction solar cells based on PtOEP: PCBM

NASA Astrophysics Data System (ADS)

Abuelwafa, A. A.; Dongol, M.; El-Nahass, M. M.; Soga, T.

2018-03-01

Small-molecule bulk heterojunction (SBHJ) solar cells based on platinum octaethylporphyrin (PtOEP) as donor material and phenyl-C61-butyric acid methyl ester (PCBM) as the acceptor were fabricated using spin coating techniques with weight ratios from 1:0.1 to 1:9. The formation of charge transfer complex CTC in the PtOEP: PCBM blend was specified from the redshift of the PtOEP absorption peak after blending with PCBM. The photovoltaic performance for PtOEP: PCBM blends were investigated using the external quantum efficiency (EQE) besides the current density-voltage (J-V) characteristics under illumination100 mW/cm2 (AM1.5G). The BHJ solar cell with PtOEP: PCBM ratio of 1:9 exhibited the best performance. The impedance spectroscopy (IS) was examined in the frequency range from 25 Hz to 1 MHz. The equivalent circuit model was evaluated in details to evaluate the impedance spectroscopy parameters. Dielectric constant {ɛ ^' }, dielectric loss {ɛ ^' ' }} and dielectric modulus were included and discussed in terms of dielectric polarization processes. Dielectric modulus displays the non-Debye relaxation in PtOEP: PCBM BHJ solar cells.

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications

NASA Astrophysics Data System (ADS)

Dupré, Ludovic; Marra, Marjorie; Verney, Valentin; Aventurier, Bernard; Henry, Franck; Olivier, François; Tirano, Sauveur; Daami, Anis; Templier, François

2017-02-01

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

DOE PAGES

Rajagopal, Adharsh; Williams, Spencer T.; Chueh, Chu-Chen; ...

2016-02-29

In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH 3NH 3PbI 3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH 3NH 3PbI 3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiO x/CH 3NH 3PbI 3 interfaces under RB. The detailed analysis navigating themore » complexities of I-V behavior in CH 3NH 3PbI 3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH 3NH 3PbI 3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.« less

Vacuum-Ultraviolet Photovoltaic Detector.

PubMed

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Highly efficient red OLEDs using DCJTB as the dopant and delayed fluorescent exciplex as the host.

PubMed

Zhao, Bo; Zhang, Tianyou; Chu, Bei; Li, Wenlian; Su, Zisheng; Wu, Hairuo; Yan, Xingwu; Jin, Fangming; Gao, Yuan; Liu, Chengyuan

2015-05-29

In this manuscript, we demonstrated a highly efficient DCJTB emission with delayed fluorescent exciplex TCTA:3P-T2T as the host. For the 1.0% DCJTB doped concentration, a maximum luminance, current efficiency, power efficiency and EQE of 22,767 cd m(-2), 22.7 cd A(-1), 21.5 lm W(-1) and 10.15% were achieved, respectively. The device performance is the best compared to either red OLEDs with traditional fluorescent emitter or traditional red phosphor of Ir(piq)3 doped into CBP host. The extraction of so high efficiency can be explained as the efficient triplet excitons up-conversion of TCTA:3P-T2T and the energy transfer from exciplex host singlet state to DCJTB singlet state.

Highly efficient red OLEDs using DCJTB as the dopant and delayed fluorescent exciplex as the host

PubMed Central

Zhao, Bo; Zhang, Tianyou; Chu, Bei; Li, Wenlian; Su, Zisheng; Wu, Hairuo; Yan, Xingwu; Jin, Fangming; Gao, Yuan; Liu, Chengyuan

2015-01-01

In this manuscript, we demonstrated a highly efficient DCJTB emission with delayed fluorescent exciplex TCTA:3P-T2T as the host. For the 1.0% DCJTB doped concentration, a maximum luminance, current efficiency, power efficiency and EQE of 22,767 cd m−2, 22.7 cd A−1, 21.5 lm W−1 and 10.15% were achieved, respectively. The device performance is the best compared to either red OLEDs with traditional fluorescent emitter or traditional red phosphor of Ir(piq)3 doped into CBP host. The extraction of so high efficiency can be explained as the efficient triplet excitons up-conversion of TCTA:3P-T2T and the energy transfer from exciplex host singlet state to DCJTB singlet state. PMID:26023882

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors.

PubMed

Yang, Shengxue; Tongay, Sefaattin; Li, Yan; Yue, Qu; Xia, Jian-Bai; Li, Shun-Shen; Li, Jingbo; Wei, Su-Huai

2014-07-07

The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords the opportunity to engineer many properties for a variety of applications in possible technological fields. Here we demonstrate that band-gap and mobility of ReSe2 nanosheet, a new member of the TMDs, increase when the layer number decreases, thus influencing the performances of ReSe2 transistors with different layers. A single-layer ReSe2 transistor shows much higher device mobility of 9.78 cm(2) V(-1) s(-1) than few-layer transistors (0.10 cm(2) V(-1) s(-1)). Moreover, a single-layer device shows high sensitivity to red light (633 nm) and has a light-improved mobility of 14.1 cm(2) V(-1) s(-1). Molecular physisorption is used as "gating" to modulate the carrier density of our single-layer transistors, resulting in a high photoresponsivity (Rλ) of 95 A W(-1) and external quantum efficiency (EQE) of 18 645% in O2 environment. This work highlights the fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer ReSe2 with appropriate band-gap is a promising material for future functional device applications.

Wavelength-Controlled Photodetector Based on Single CdSSe Nanobelt

NASA Astrophysics Data System (ADS)

Li, Xinmin; Tan, Qiuhong; Feng, Xiaobo; Wang, Qianjin; Liu, Yingkai

2018-06-01

CdSSe nanobelts (NBs) are synthesized by thermal evaporation and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and cathodoluminescence (CL). It is found that the CdSSe NBs have a good morphology and microstructure without defects. CL is sensitive to the defects of CdSSe NBs; thus, we can select single nanobelt with homogeneous CL emission to prepare a detector. Based on it, the photodetector of single CdSSe NB was developed and its photoelectric properties were investigated in detail. It is found that under illumination of white light and at the bias voltage of 1 V, the photocurrent of a single CdSSe nanobelt device is 1.60 × 10-7 A, the dark current is 1.96 × 10-10 A, and the ratio of light current to dark one is 816. In addition, the CdSSe nanobelt detector has high photoelectric performance with spectral responsivity of 10.4 AW-1 and external quantum efficiency (EQE) of 19.1%. Its rise/decay time is about 1.62/4.70 ms. This work offers a novel strategy for design wavelength-controlled photodetectors by adjusting their compositions.

Investigation of the Charge Balance in Green Phosphorescent Organic Light-Emitting Diodes by Controlling the Mixed Host Emission Layer.

PubMed

Lee, Jeonghyun; Choi, Pyungho; Kim, Minsoo; Lim, Kiwon; Hyeon, Younghwan; Kim, Soonkon; Koo, Kwangjun; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

In this paper, we investigated the use of a mixed host emission layer (MH-EML) in green phosphorescent organic light-emitting diodes (OLEDs). The hole transport type (p-type) material (4,4'-Bis(N-carbazolyl)-1,1'-biphenyl (CBP)) and electron transport type (N-type) material (2,2',2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)) were mixed with different ratios. The electrons were easily injected through the lowest unoccupied molecular orbital (LUMO) of TPBi in the mixed host system. Also, holes were confined in the EML because of the deep highest occupied molecular orbital (HOMO) level of TPBi (6.7 eV). These results indicate that excitons were formed effectively and the recombination zone became wider under a high electric field in MH-EML devices. For these reasons, the lifetime of the MH-OLED device was 1.36 times higher than that of a single host emission layer (SH-EML) device and showed a reduction in Joule heating. Finally, the external quantum efficiency (EQE) roll-off ratio from 1 mA/cm2 to 100 mA/cm2 in the optimized device (30.46%) was 18.12%p lower than that of the SH-EML (48.58%).

Wavelength-Controlled Photodetector Based on Single CdSSe Nanobelt.

PubMed

Li, Xinmin; Tan, Qiuhong; Feng, Xiaobo; Wang, Qianjin; Liu, Yingkai

2018-06-07

CdSSe nanobelts (NBs) are synthesized by thermal evaporation and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and cathodoluminescence (CL). It is found that the CdSSe NBs have a good morphology and microstructure without defects. CL is sensitive to the defects of CdSSe NBs; thus, we can select single nanobelt with homogeneous CL emission to prepare a detector. Based on it, the photodetector of single CdSSe NB was developed and its photoelectric properties were investigated in detail. It is found that under illumination of white light and at the bias voltage of 1 V, the photocurrent of a single CdSSe nanobelt device is 1.60 × 10 -7  A, the dark current is 1.96 × 10 -10  A, and the ratio of light current to dark one is 816. In addition, the CdSSe nanobelt detector has high photoelectric performance with spectral responsivity of 10.4 AW -1 and external quantum efficiency (EQE) of 19.1%. Its rise/decay time is about 1.62/4.70 ms. This work offers a novel strategy for design wavelength-controlled photodetectors by adjusting their compositions.

Efficient Red-Emitting Platinum Complex with Long Operational Stability.

PubMed

Fleetham, Tyler; Li, Guijie; Li, Jian

2015-08-05

A tetradentate cyclometalated Pt(II) complex, PtN3N-ptb, was developed as an emissive dopant for stable and efficient red phosphorescent OLEDs. Devices employing PtN3N-ptb in electrochemically stable device architectures achieved long operational lifetimes with estimated LT97, of over 600 h at luminances of 1000 cd/m(2). Such long operational lifetimes were achieved utilizing only literature reported host, transporting and blocking materials with known molecular structures. Additionally, a thorough study of the effects of various host and transport materials on the efficiency, turn on voltage, and stability of the devices was carried out. Ultimately, maximum forward viewing EQEs as high as 21.5% were achieved, demonstrating that Pt(II) complexes can act as stable and efficient dopants with operational lifetimes comparable or superior to those of the best literature-reported Ir(III) complexes.

Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern

NASA Astrophysics Data System (ADS)

Han, Nam; Jung, Eunjin; Han, Min; Deul Ryu, Beo; Bok Ko, Kang; Park, Young Jae; Cuong, TranViet; Cho, Jaehee; Kim, Hyunsoo; Hong, Chang-Hee

2015-07-01

Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current-voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of  -5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

PubMed

Malinowski, Pawel E; Georgitzikis, Epimitheas; Maes, Jorick; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-12-10

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10 -6 A/cm² at -2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

Organic Optoelectronic Devices Employing Small Molecules

NASA Astrophysics Data System (ADS)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts.

PubMed

Saenz, Gustavo A; Karapetrov, Goran; Curtis, James; Kaul, Anupama B

2018-01-19

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS 2 is presented, which is a less explored system compared to direct band gap monolayer MoS 2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS 2 membranes. The photoresponsivity [Formula: see text] was measured to be ~1.4 × 10 4  A/W, which is > 10 4 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10 11 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10 4 . From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors †

PubMed Central

Georgitzikis, Epimitheas; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-01-01

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10−6 A/cm2 at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors. PMID:29232871

[EEQ in clinical embryology: a starting program].

PubMed

Boyer, Pierre; Brugnon, Florence; Levy, Rachel; Pfeffer, Jérôme; Siest, Jean-Pascal

2014-01-01

Every laboratory including those working in assisted reproductive technologies have to be accredited EN ISO 15189 before 2020. This standardisation includes an external quality evaluation (EQE). In order to work out an EQE tool, we used images extracted from our own database developed during daily practice. We achieved an easily online tool called: "EEQ en embryologie clinique", developed on Biologie prospective web site with ART French biologists Association (Blefco) expertise in evaluation of early human embryonic stages. In 2013, 38 ART laboratories participate to the first program with more than 90% of appropriates results. The present article aims at describing this tool and discussing its limits.

Integrating nanostructured electrodes in organic photovoltaic devices for enhancing near-infrared photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardes, Alexandre M.; Ahn, Sungmo; Rourke, Devin

2016-12-01

We introduce a simple methodology to integrate prefabricated nanostructured-electrodes in solution-processed organic photovoltaic (OPV) devices. The tailored 'photonic electrode' nanostructure is used for light management in the device and for hole collection. This approach opens up new possibilities for designing photonically active structures that can enhance the absorption of sub-bandgap photons in the active layer. We discuss the design, fabrication and characterization of photonic electrodes, and the methodology for integrating them to OPV devices using a simple lamination technique. We demonstrate theoretically and experimentally that OPV devices using photonic electrodes show a factor of ca. 5 enhancement in external quantummore » efficiency (EQE) in the near infrared region. We use simulations to trace this observed efficiency enhancement to surface plasmon polariton modes in the nanostructure.« less

Multiple-Color-Generating Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells via Dichroic Film Incorporation for Power-Generating Window Applications.

PubMed

Yoo, Gang Yeol; Jeong, Jae-Seung; Lee, Soyoung; Lee, Youngki; Yoon, Hee Chang; Chu, Van Ben; Park, Gi Soon; Hwang, Yun Jeong; Kim, Woong; Min, Byoung Koun; Do, Young Rag

2017-05-03

There are four prerequisites when applying all types of thin-film solar cells to power-generating window photovoltaics (PVs): high power-generation efficiency, longevity and high durability, semitransparency or partial-light transmittance, and colorful and aesthetic value. Solid-type thin-film Cu(In,Ga)S 2 (CIGS) or Cu(In,Ga)(S,Se) 2 (CIGSSe) PVs nearly meet the first two criteria, making them promising candidates for power-generating window applications if they can transmit light to some degree and generate color with good aesthetic value. In this study, the mechanical scribing process removes 10% of the window CIGSSe thin-film solar cell with vacant line patterns to provide a partial-light-transmitting CIGSSe PV module to meet the third requirement. The last concept of creating distinct colors could be met by the addition of reflectance colors of one-dimensional (1D) photonic crystal (PC) dichroic film on the black part of a partial-light-transmitting CIGSSe PV module. Beautiful violets and blues were created on the cover glass of a black CIGSSe PV module via the addition of 1D PC blue-mirror-yellow-pass dichroic film to improve the aesthetic value of the outside appearance. As a general result from the low external quantum efficiency (EQE) and absorption of CIGSSe PVs below a wavelength of 400 nm, the harvesting efficiency and short-circuit photocurrent of CIGSSe PVs were reduced by only ∼10% without reducing the open-circuit voltage (V OC ) because of the reduced overlap between the absorption spectrum of CIGSSe PV and the reflectance spectrum of the 1D PC blue-mirror-yellow-pass dichroic film. The combined technology of partial-vacancy-scribed CIGSSe PV modules and blue 1D PC dichroic film can provide a simple strategy to be applied to violet/blue power-generating window applications, as such a strategy can improve the transparency and aesthetic value without significantly sacrificing the harvesting efficiency of the CIGSSe PV modules.

Multi-functional bis(alkynyl)gold(iii) N⁁C complexes with distinct mechanochromic luminescence and electroluminescence properties† †Electronic supplementary information (ESI) available: CCDC 1552808. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc02410j

PubMed Central

Wong, Ben Yiu-Wing; Wong, Hok-Lai; Wong, Yi-Chun; Au, Vonika Ka-Man

2017-01-01

A new class of donor–acceptor type luminescent bis(alkynyl)gold(iii) N⁁C complexes has been synthesized and characterized. These gold(iii) complexes not only exhibit high photoluminescence quantum yields of up to 0.81, but also interesting mechanochromic luminescence behaviors that are reversible. Upon grinding, a dramatic luminescence color change from green to red can be observed in solid samples of the gold(iii) complexes, and the mechanochromic luminescence can be readily tuned via a judicious selection of substituents on the pyridine ring. In addition, solution-processable OLEDs based on this class of complexes with EQE values of up to 4.0% have been realized, representing the first demonstration of bis(alkynyl)gold(iii) N⁁C complexes as emissive materials in solution-processable OLEDs. PMID:29147519

Crystalline Nanoporous Frameworks: a Nanolaboratory for Probing Excitonic Device Concepts.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allendorf, Mark D.; Azoulay, Jason; Ford, Alexandra Caroline

2014-09-01

Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reachmore » their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are inaccessible in disordered systems. Implementing this concept also creates entirely new dimensions for device fabrication that could both improve performance, increase durability, and reduce costs with unprecedented control of over properties. This report summarizes the key results of this project and is divided into sections based on publications that resulted from the work. We begin in Section 2 with an investigation of light harvesting and energy transfer in a MOF infiltrated with donor and acceptor molecules of the type typically used in OPV devices (thiophenes and fullerenes, respectively). The results show that MOFs can provide multiple functions: as a light harvester, as a stabilizer and organizer or the infiltrated molecules, and as a facilitator of energy transfer. Section 3 describes computational design of MOF linker groups to accomplish light harvesting in the visible and facilitate charge separation and transport. The predictions were validated by UV-visible absorption spectroscopy, demonstrating that rational design of MOFs for light-harvesting purposes is feasible. Section 4 extends the infiltration concept discussed in Section to, which we now designate as "Molecule@MOF" to create an electrically conducting framework. The tailorability and high conductivity of this material are unprecedented, meriting publication in the journal Science and spawning several Technical Advances. Section 5 discusses processes we developed for depositing MOFs as thin films on substrates, a critical enabling technology for fabricating MOF-based electronic devices. Finally, in Section 6 we summarize results showing that a MOF thin film can be used as a sensitizer in a DSSC, demonstrating that MOFs can serve as active layers in excitonic devices. Overall, this project provides several crucial proofs-of- concept that the potential of MOFs for use in optoelectronic devices that we predicted several years ago [ 3 ] can be realized in practice.« less

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

Novel metamaterials and their applications in subwavelength waveguides, imanging and modulation

NASA Astrophysics Data System (ADS)

Zhang, Chaomin

GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 mum/hour and 55 mum/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.

Quinacridone-based molecular donors for solution processed bulk-heterojunction organic solar cells.

PubMed

Chen, John Jun-An; Chen, Teresa L; Kim, BongSoo; Poulsen, Daniel A; Mynar, Justin L; Fréchet, Jean M J; Ma, Biwu

2010-09-01

New soluble quinacridone-based molecules have been developed as electron donor materials for solution-processed organic solar cells. By functionalizing the pristine pigment core of quinacridone with solubilizing alkyl chains and light absorbing/charge transporting thiophene units, i.e., bithiophene (BT) and thienylbenzo[c][1,2,5]thiadiazolethienyl (BTD), we prepared a series of multifunctional quinacridone-based molecules. These molecular donors show intense absorption in the visible spectral region, and the absorption range and intensity are well-tuned by the interaction between the quinacridone core and the incorporated thiophene units. The thin film absorption edge extends with the expansion of molecular conjugation, i.e., 552 nm for N,N'-di(2-ethylhexyl)quinacridone (QA), 592 nm for 2,9-Bis(5'-hexyl-2,2'-bithiophene)-N,N'-di(2-ethylhexyl)quinacridone (QA-BT), and 637 nm for 4-(5-hexylthiophen-2-yl)-7-(thiophen-2-yl)benzo[c][1,2,5]thiadiazole (QA-BTD). The change of molecular structure also influences the electrochemical properties. Observed from cyclic voltammetry measurements, the oxidation and reduction potentials (vs ferrocene) are 0.7 and -1.83 V for QA, 0.54 and -1.76 V for QA-BT, and 0.45 and -1.68 V for QA-BTD. Uniform thin films can be generated from both single component molecular solutions and blend solutions of these molecules with [6,6]-phenyl C70-butyric acid methyl ester (PC70BM). The blend films exhibit space-charge limited current (SCLC) hole mobilities on the order of 1×10(-4) cm(2) V(-1) S(-1). Bulk heterojunction (BHJ) solar cells using these soluble molecules as donors and PC70BM as the acceptor were fabricated. Power conversion efficiencies (PCEs) of up to 2.22% under AM 1.5 G simulated 1 sun solar illumination have been achieved and external quantum efficiencies (EQEs) reach as high as ∼45%.

Reducing inhomogeneity in the dynamic properties of quantum dots via self-aligned plasmonic cavities

NASA Astrophysics Data System (ADS)

Demory, Brandon; Hill, Tyler A.; Teng, Chu-Hsiang; Deng, Hui; Ku, P. C.

2018-01-01

A plasmonic cavity is shown to greatly reduce the inhomogeneity of dynamic optical properties such as quantum efficiency and radiative lifetime of InGaN quantum dots. By using an open-top plasmonic cavity structure, which exhibits a large Purcell factor and antenna quantum efficiency, the resulting quantum efficiency distribution for the quantum dots narrows and is no longer limited by the quantum dot inhomogeneity. The standard deviation of the quantum efficiency can be reduced to 2% while maintaining the overall quantum efficiency at 70%, making InGaN quantum dots a viable candidate for high-speed quantum cryptography and random number generation applications.

Reducing inhomogeneity in the dynamic properties of quantum dots via self-aligned plasmonic cavities.

PubMed

Demory, Brandon; Hill, Tyler A; Teng, Chu-Hsiang; Deng, Hui; Ku, P C

2018-01-05

A plasmonic cavity is shown to greatly reduce the inhomogeneity of dynamic optical properties such as quantum efficiency and radiative lifetime of InGaN quantum dots. By using an open-top plasmonic cavity structure, which exhibits a large Purcell factor and antenna quantum efficiency, the resulting quantum efficiency distribution for the quantum dots narrows and is no longer limited by the quantum dot inhomogeneity. The standard deviation of the quantum efficiency can be reduced to 2% while maintaining the overall quantum efficiency at 70%, making InGaN quantum dots a viable candidate for high-speed quantum cryptography and random number generation applications.

Efficient, deep-blue TADF-emitters for OLED display applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Volz, Daniel; Baumann, Thomas

2016-09-01

Currently, the mobile display market is strongly shifting towards AMOLED technology, in order to enable curved and flexible displays. This leads to a growing demand for highly efficient OLED emitters to reduce the power consumption and increase display resolution at the same time. While highly efficient green and red OLEDs already found their place in commercial OLED-displays, the lack of efficient blue emitters is still an issue. Consequently, the active area for blue is considerably larger than for green and red pixels, to make up for the lower efficiency. We intend to close this efficiency-gap with novel emitters based on thermally activated delayed fluorescence (TADF) technology. Compared to state-of-the-art fluorescent dopants, the efficiency of TADF-emitters is up to four times higher. At the same time, it is possible to design them in a way to maintain deep blue emission, i.e. CIE y < 0.2. These aspects are relevant to produce efficient high resolution AMOLED displays. Apart from these direct customer benefits, our TADF technology does not contain any rare elements, which allows for the fabrication of sustainable OLED technology. In this work, we highlight one of our recently developed blue TADF materials. Basic material properties as well as first device results are discussed. In a bottom-emitting device, a CIEx/CIEy coordinate of (0.16/0.17) was achieved with efficiency values close to 20% EQE.

Highly efficient near ultraviolet organic light-emitting diode based on a meta-linked donor–acceptor molecule† †Electronic supplementary information (ESI) available: The details of the synthesis; the ground state and excited state geometries in PPI, TPA–PPI and mTPA–PPI; absorption and emission properties of PPI, TPA–PPI and mTPA–PPI in the gas phase; detailed absorption peak positions, emission peak positions and ηPL values of PPI and mTPA–PPI in different solvents; HOMO and LUMO of mTPA–PPI at ground state; NTO for the S0 → S1 absorption transition in PPI, TPA–PPI and mTPA–PPI; NTO for S0 → Sn electronic transition character in mTPA–PPI; lifetime measurement, radiative transition rates and non-radiative transition rates of PPI and mTPA–PPI in hexane and THF solutions; low-temperature fluorescence and phosphorescence spectra of PPI and mTPA–PPI; CV curves of PPI and mTPA–PPI, and schematic diagram of design principle of mTPA–PPI; TGA and DSC graphs of PPI and mTPA–PPI; current efficiency–current density–power efficiency curves and EL spectra at different driving voltages of PPI and mTPA–PPI devices. See DOI: 10.1039/c5sc01131k

PubMed Central

Liu, Haichao; Bai, Qing; Yao, Liang; Zhang, Haiyan; Xu, Hai; Zhang, Shitong; Li, Weijun; Gao, Yu; Li, Jinyu; Lu, Ping; Wang, Hongyan; Ma, Yuguang

2015-01-01

A novel near ultraviolet (NUV) emitter with a meta-linked donor–acceptor (D–A) structure between triphenylamine (TPA) and phenanthroimidazole (PPI), mTPA–PPI, was designed and synthesized. This molecular design is expected to resolve the conflict between the non-red-shifted emission and the introduction of a charge-transfer (CT) state in the D–A system, aiming at NUV organic light-emitting diodes (OLEDs) with high-efficiency and colour-purity. Theoretical calculations and photophysical experiments were implemented to verify the unique excited state properties of mTPA–PPI. The mTPA–PPI device exhibited excellent NUV electroluminescence (EL) performance with an emission peak at 404 nm, a full width at half maximum (FWHM) of only 47 nm corresponding to a CIE coordinate of (0.161, 0.049), and a maximum external quantum efficiency (EQE) of 3.33%, which is among the best results for NUV OLEDs. This work not only demonstrates the promising potential of mTPA–PPI in NUV OLEDs, but also provides a valuable strategy for the rational design of NUV materials by using the meta-linked D–A architecture. PMID:29218149

Electrical investigations of hybrid OLED microcavity structures with novel encapsulation methods

NASA Astrophysics Data System (ADS)

Meister, Stefan; Brückner, Robert; Fröb, Hartmut; Leo, Karl

2016-04-01

An electrical driven organic solid state laser is a very challenging goal which is so far well beyond reach. As a step towards realization, we monolithically implemented an Organic Light Emitting Diode (OLED) into a dielectric, high quality microcavity (MC) consisting of two Distributed Bragg Reectors (DBR). In order to account for an optimal optical operation, the OLED structure has to be adapted. Furthermore, we aim to excite the device not only electrically but optically as well. Different OLED structures with an emission layer consisting of Alq3:DCM (2 wt%) were investigated. The External Quantum Efficiencies (EQE) of this hybrid structures are in the range of 1-2 %, as expected for this material combination. Including metal layers into a MC is complicated and has a huge impact on the device performance. Using Transfer-Matrix-Algorithm (TMA) simulations, the best positions for the metal electrodes are determined. First, the electroluminescence (EL) of the adjusted OLED structure on top of a DBR is measured under nitrogen atmosphere. The modes showed quality factors of Q = 60. After the deposition of the top DBR, the EL is measured again and the quality factors increased up to Q = 600. Considering the two 25-nm-thick-silver contacts a Q-factor of 600 is very high. The realization of a suitable encapsulation method is important. Two approaches were successfully tested. The first method is based on the substitution of a DBR layer with a layer produced via Atomic Layer Deposition (ALD). The second method uses a 0.15-mm-thick cover glass glued on top of the DBR with a 0.23-μm-thick single-component glue layer. Due to the working encapsulation, it is possible to investigate the sample under ambient conditions.

Influence of the Preparation Method on Planar Perovskite CH3NH3PbI3-xClx Solar Cell Performance and Hysteresis

NASA Astrophysics Data System (ADS)

Ivanova, A.; Tokmakov, A.; Lebedeva, K.; Roze, M.; Kaulachs, I.

2017-08-01

Organometal halide perovskites are promising materials for lowcost, high-efficiency solar cells. The method of perovskite layer deposition and the interfacial layers play an important role in determining the efficiency of perovskite solar cells (PSCs). In the paper, we demonstrate inverted planar perovskite solar cells where perovskite layers are deposited by two-step modified interdiffusion and one-step methods. We also demonstrate how PSC parameters change by doping of charge transport layers (CTL). We used dimethylsupoxide (DMSO) as dopant for the hole transport layer (PEDOT:PSS) but for the electron transport layer [6,6]-phenyl C61 butyric acid methyl ester (PCBM)) we used N,N-dimethyl-N-octadecyl(3-aminopropyl)trimethoxysilyl chloride (DMOAP). The highest main PSC parameters (PCE, EQE, VOC) were obtained for cells prepared by the one-step method with fast crystallization and doped CTLs but higher fill factor (FF) and shunt resistance (Rsh) values were obtained for cells prepared by the two-step method with undoped CTLs.

Simultaneous Enhancement of Efficiency and Stability of Phosphorescent OLEDs Based on Efficient Förster Energy Transfer from Interface Exciplex.

PubMed

Zhang, Dongdong; Cai, Minghan; Zhang, Yunge; Bin, Zhengyang; Zhang, Deqiang; Duan, Lian

2016-02-17

Exciplex forming cohosts have been widely adopted in phosphorescent organic light-emitting diodes (PHOLEDs), achieving high efficiency with low roll-off and low driving voltage. However, the influence of the exciplex-forming hosts on the lifetimes of the devices, which is one of the essential characteristics, remains unclear. Here, we compare the influence of the bulk exciplex and interface exciplex on the performances of the devices, demonstrating highly efficient orange PHOLEDs with long lifetime at low dopant concentration by efficient Förster energy transfer from the interface exciplex. A bipolar host, (3'-(4,6-diphenyl-1,3,5-triazin-2-yl)-(1,1'-biphenyl)-3-yl)-9-carbazole (CzTrz), was adopted to combine with a donor molecule, tris(4-(9H-carbazol-9-yl)phenyl)amine (TCTA), to form exciplex. Devices with energy transfer from the interface exciplex achieve lifetime almost 2 orders of magnitude higher than the ones based on bulk exciplex as the host by avoiding the formation of the donor excited states. Moreover, a highest EQE of 27% was obtained at the dopant concentration as low as 3 wt % for a device with interface exciplex, which is favorable for reducing the cost of fabrication. We believe that our work may shed light on future development of ideal OLEDs with high efficiency, long-lifetime, low roll-off and low cost simultaneously.

Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iida, Daisuke; Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby; Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya

2015-09-15

We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires

NASA Astrophysics Data System (ADS)

Hoffmann, Eric A.

State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters---a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency.

The Influences of Quantum Coherence on the Positive Work and the Efficiency of Quantum Heat Engine with Working Substance of Two-Qubit Heisenberg XXX Model

NASA Astrophysics Data System (ADS)

Peng, Hu-Ping; Fang, Mao-Fa; Yu, Min; Zou, Hong-Mei

2018-03-01

We study the influences of quantum coherence on the positive work and the efficiency of quantum heat engine (QHE) based on working substance of two-qubit Heisenberg model under a constant external magnetic field. By using analytical and numerical solution, we give the relation expressions for both the positive work and the efficiency with quantum coherence, and in detail discuss the effects of the quantum coherence on the positive work and the efficiency of QHE in the absence or presence of external magnetic field, respectively.

The Influences of Quantum Coherence on the Positive Work and the Efficiency of Quantum Heat Engine with Working Substance of Two-Qubit Heisenberg XXX Model

NASA Astrophysics Data System (ADS)

Peng, Hu-Ping; Fang, Mao-Fa; Yu, Min; Zou, Hong-Mei

2018-06-01

We study the influences of quantum coherence on the positive work and the efficiency of quantum heat engine (QHE) based on working substance of two-qubit Heisenberg model under a constant external magnetic field. By using analytical and numerical solution, we give the relation expressions for both the positive work and the efficiency with quantum coherence, and in detail discuss the effects of the quantum coherence on the positive work and the efficiency of QHE in the absence or presence of external magnetic field, respectively.

Efficient classical simulation of the Deutsch-Jozsa and Simon's algorithms

NASA Astrophysics Data System (ADS)

Johansson, Niklas; Larsson, Jan-Åke

2017-09-01

A long-standing aim of quantum information research is to understand what gives quantum computers their advantage. This requires separating problems that need genuinely quantum resources from those for which classical resources are enough. Two examples of quantum speed-up are the Deutsch-Jozsa and Simon's problem, both efficiently solvable on a quantum Turing machine, and both believed to lack efficient classical solutions. Here we present a framework that can simulate both quantum algorithms efficiently, solving the Deutsch-Jozsa problem with probability 1 using only one oracle query, and Simon's problem using linearly many oracle queries, just as expected of an ideal quantum computer. The presented simulation framework is in turn efficiently simulatable in a classical probabilistic Turing machine. This shows that the Deutsch-Jozsa and Simon's problem do not require any genuinely quantum resources, and that the quantum algorithms show no speed-up when compared with their corresponding classical simulation. Finally, this gives insight into what properties are needed in the two algorithms and calls for further study of oracle separation between quantum and classical computation.

Efficiency and formalism of quantum games

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, C.F.; Johnson, Neil F.

We show that quantum games are more efficient than classical games and provide a saturated upper bound for this efficiency. We also demonstrate that the set of finite classical games is a strict subset of the set of finite quantum games. Our analysis is based on a rigorous formulation of quantum games, from which quantum versions of the minimax theorem and the Nash equilibrium theorem can be deduced.

High-Efficiency and High-Power Mid-Wave Infrared Cascade Lasers

DTIC Science & Technology

2012-10-01

internal quantum efficiency () and factor (2) is usually called the optical extraction efficiency (). The optical extraction efficiency ... quantum efficiency involves more fundamental parameters corresponding to the microscopic processes of the device operation, nevertheless, it can be...deriving parameters such as the internal quantum efficiency of a QC laser, the entire injector miniband can be treated as a single virtual state

On the minimum quantum requirement of photosynthesis.

PubMed

Zeinalov, Yuzeir

2009-01-01

An analysis of the shape of photosynthetic light curves is presented and the existence of the initial non-linear part is shown as a consequence of the operation of the non-cooperative (Kok's) mechanism of oxygen evolution or the effect of dark respiration. The effect of nonlinearity on the quantum efficiency (yield) and quantum requirement is reconsidered. The essential conclusions are: 1) The non-linearity of the light curves cannot be compensated using suspensions of algae or chloroplasts with high (>1.0) optical density or absorbance. 2) The values of the maxima of the quantum efficiency curves or the values of the minima of the quantum requirement curves cannot be used for estimation of the exact value of the maximum quantum efficiency and the minimum quantum requirement. The estimation of the maximum quantum efficiency or the minimum quantum requirement should be performed only after extrapolation of the linear part at higher light intensities of the quantum requirement curves to "0" light intensity.

Entanglement routers via a wireless quantum network based on arbitrary two qubit systems

NASA Astrophysics Data System (ADS)

Metwally, N.

2014-12-01

A wireless quantum network is generated between multi-hops, where each hop consists of two entangled nodes. These nodes share a finite number of entangled two-qubit systems randomly. Different types of wireless quantum bridges (WQBS) are generated between the non-connected nodes. The efficiency of these WQBS to be used as quantum channels between its terminals to perform quantum teleportation is investigated. We suggest a theoretical wireless quantum communication protocol to teleport unknown quantum signals from one node to another, where the more powerful WQBS are used as quantum channels. It is shown that, by increasing the efficiency of the sources that emit the initial partial entangled states, one can increase the efficiency of the wireless quantum communication protocol.

An efficient quantum circuit analyser on qubits and qudits

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2011-10-01

This paper presents a highly efficient decomposition scheme and its associated Mathematica notebook for the analysis of complicated quantum circuits comprised of single/multiple qubit and qudit quantum gates. In particular, this scheme reduces the evaluation of multiple unitary gate operations with many conditionals to just two matrix additions, regardless of the number of conditionals or gate dimensions. This improves significantly the capability of a quantum circuit analyser implemented in a classical computer. This is also the first efficient quantum circuit analyser to include qudit quantum logic gates.

Efficient quantum walk on a quantum processor

PubMed Central

Qiang, Xiaogang; Loke, Thomas; Montanaro, Ashley; Aungskunsiri, Kanin; Zhou, Xiaoqi; O'Brien, Jeremy L.; Wang, Jingbo B.; Matthews, Jonathan C. F.

2016-01-01

The random walk formalism is used across a wide range of applications, from modelling share prices to predicting population genetics. Likewise, quantum walks have shown much potential as a framework for developing new quantum algorithms. Here we present explicit efficient quantum circuits for implementing continuous-time quantum walks on the circulant class of graphs. These circuits allow us to sample from the output probability distributions of quantum walks on circulant graphs efficiently. We also show that solving the same sampling problem for arbitrary circulant quantum circuits is intractable for a classical computer, assuming conjectures from computational complexity theory. This is a new link between continuous-time quantum walks and computational complexity theory and it indicates a family of tasks that could ultimately demonstrate quantum supremacy over classical computers. As a proof of principle, we experimentally implement the proposed quantum circuit on an example circulant graph using a two-qubit photonics quantum processor. PMID:27146471

A universal quantum information processor for scalable quantum communication and networks

PubMed Central

Yang, Xihua; Xue, Bolin; Zhang, Junxiang; Zhu, Shiyao

2014-01-01

Entanglement provides an essential resource for quantum computation, quantum communication, and quantum networks. How to conveniently and efficiently realize the generation, distribution, storage, retrieval, and control of multipartite entanglement is the basic requirement for realistic quantum information processing. Here, we present a theoretical proposal to efficiently and conveniently achieve a universal quantum information processor (QIP) via atomic coherence in an atomic ensemble. The atomic coherence, produced through electromagnetically induced transparency (EIT) in the Λ-type configuration, acts as the QIP and has full functions of quantum beam splitter, quantum frequency converter, quantum entangler, and quantum repeater. By employing EIT-based nondegenerate four-wave mixing processes, the generation, exchange, distribution, and manipulation of light-light, atom-light, and atom-atom multipartite entanglement can be efficiently and flexibly achieved in a deterministic way with only coherent light fields. This method greatly facilitates the operations in quantum information processing, and holds promising applications in realistic scalable quantum communication and quantum networks. PMID:25316514

High efficiency coherent optical memory with warm rubidium vapour

PubMed Central

Hosseini, M.; Sparkes, B.M.; Campbell, G.; Lam, P.K.; Buchler, B.C.

2011-01-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory. PMID:21285952

High efficiency coherent optical memory with warm rubidium vapour.

PubMed

Hosseini, M; Sparkes, B M; Campbell, G; Lam, P K; Buchler, B C

2011-02-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory.

[Definition of quantum efficiency of X-ray detectors].

PubMed

Zelikman, M I

2001-01-01

Different definitions available in the literature on the quantum efficiency of X-ray detectors are presented and compared. The relationship of this parameter to spatial frequencies for quantum accounting receivers and energy accumulating ones is analyzed. A procedure is proposed for evaluating the quantum efficiency of the detectors in the area of zero spatial frequencies, which is rather simple and requires no special testing equipment.

An efficient quantum algorithm for spectral estimation

NASA Astrophysics Data System (ADS)

Steffens, Adrian; Rebentrost, Patrick; Marvian, Iman; Eisert, Jens; Lloyd, Seth

2017-03-01

We develop an efficient quantum implementation of an important signal processing algorithm for line spectral estimation: the matrix pencil method, which determines the frequencies and damping factors of signals consisting of finite sums of exponentially damped sinusoids. Our algorithm provides a quantum speedup in a natural regime where the sampling rate is much higher than the number of sinusoid components. Along the way, we develop techniques that are expected to be useful for other quantum algorithms as well—consecutive phase estimations to efficiently make products of asymmetric low rank matrices classically accessible and an alternative method to efficiently exponentiate non-Hermitian matrices. Our algorithm features an efficient quantum-classical division of labor: the time-critical steps are implemented in quantum superposition, while an interjacent step, requiring much fewer parameters, can operate classically. We show that frequencies and damping factors can be obtained in time logarithmic in the number of sampling points, exponentially faster than known classical algorithms.

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

NASA Astrophysics Data System (ADS)

Schuster, Jonathan; Bellotti, Enrico

2013-06-01

We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

IMPREGNATION OF CONCRETE PIPE FOR CORROSION RESISTANCE AND STRENGTH IMPROVEMENT

EPA Science Inventory

The program was undertaken to field test concrete sewer pipe that had been impregnated with sulfur or hydrofluoric acid. This program was a follow-on to a previous laboratory study sponsored by EPA entitled, Impregnation of Concrete Pipe, 11024EQE 06/71. In a subsequent grant ext...

Type II GaSb quantum ring solar cells under concentrated sunlight.

PubMed

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

Experimental demonstration of selective quantum process tomography on an NMR quantum information processor

NASA Astrophysics Data System (ADS)

Gaikwad, Akshay; Rehal, Diksha; Singh, Amandeep; Arvind, Dorai, Kavita

2018-02-01

We present the NMR implementation of a scheme for selective and efficient quantum process tomography without ancilla. We generalize this scheme such that it can be implemented efficiently using only a set of measurements involving product operators. The method allows us to estimate any element of the quantum process matrix to a desired precision, provided a set of quantum states can be prepared efficiently. Our modified technique requires fewer experimental resources as compared to the standard implementation of selective and efficient quantum process tomography, as it exploits the special nature of NMR measurements to allow us to compute specific elements of the process matrix by a restrictive set of subsystem measurements. To demonstrate the efficacy of our scheme, we experimentally tomograph the processes corresponding to "no operation," a controlled-NOT (CNOT), and a controlled-Hadamard gate on a two-qubit NMR quantum information processor, with high fidelities.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency.

PubMed

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A; Chen, Ying-Cheng

2018-05-04

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

Solar hydrogen and solar electricity using mesoporous materials

NASA Astrophysics Data System (ADS)

Mahoney, Luther

The development of cost-effective materials for effective utilization of solar energy is a major challenge for solving the energy problems that face the world. This thesis work relates to the development of mesoporous materials for solar energy applications in the areas of photocatalytic water splitting and the generation of electricity. Mesoporous materials were employed throughout the studies because of their favorable physico-chemical properties such as high surface areas and large porosities. The first project was related to the use of a cubic periodic mesoporous material, MCM-48. The studies showed that chromium loading directly affected the phase of mesoporous silica formed. Furthermore, within the cubic MCM-48 structure, the loading of polychromate species determined the concentration of solar hydrogen produced. In an effort to determine the potential of mesoporous materials, titanium dioxide was prepared using the Evaporation-Induced Self-Assembly (EISA) synthetic method. The aging period directly determined the amount of various phases of titanium dioxide. This method was extended for the preparation of cobalt doped titanium dioxide for solar simulated hydrogen evolution. In another study, metal doped systems were synthesized using the EISA procedure and rhodamine B (RhB) dye sensitized and metal doped titania mesoporous materials were evaluated for visible light hydrogen evolution. The final study employed various mesoporous titanium dioxide materials for N719 dye sensitized solar cell (DSSC) materials for photovoltaic applications. The materials were extensively characterized using powder X-ray diffraction (XRD), nitrogen physisorption, diffuse reflectance spectroscopy (DRS), UV-Vis spectroscopy, Fourier-Transform-Infrared Spectroscopy (FT-IR), Raman spectroscopy, chemisorption, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). In addition, photoelectrochemical measurements were completed using current-voltage (I-V) curves, external quantum efficiency (EQE) curves, electrochemical impedance spectroscopy (EIS), and transient spectroscopy. The thesis work presented provides a better understanding of the role of mesoporous materials for solar hydrogen and solar electricity production.

Non-Markovianity and reservoir memory of quantum channels: a quantum information theory perspective

PubMed Central

Bylicka, B.; Chruściński, D.; Maniscalco, S.

2014-01-01

Quantum technologies rely on the ability to coherently transfer information encoded in quantum states along quantum channels. Decoherence induced by the environment sets limits on the efficiency of any quantum-enhanced protocol. Generally, the longer a quantum channel is the worse its capacity is. We show that for non-Markovian quantum channels this is not always true: surprisingly the capacity of a longer channel can be greater than of a shorter one. We introduce a general theoretical framework linking non-Markovianity to the capacities of quantum channels and demonstrate how harnessing non-Markovianity may improve the efficiency of quantum information processing and communication. PMID:25043763

Photo-acoustic spectroscopy and quantum efficiency of Yb{sup 3+} doped alumino silicate glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuhn, Stefan, E-mail: stefan.kuhn84@googlemail.com; Tiegel, Mirko; Herrmann, Andreas

2015-09-14

In this contribution, we analyze the effect of several preparation methods of Yb{sup 3+} doped alumino silicate glasses on their quantum efficiency by using photo-acoustic measurements in comparison to standard measurement methods including the determination via the fluorescence lifetime and an integrating sphere setup. The preparation methods focused on decreasing the OH concentration by means of fluorine-substitution and/or applying dry melting atmospheres, which led to an increase in the measured fluorescence lifetime. However, it was found that the influence of these methods on radiative properties such as the measured fluorescence lifetime alone does not per se give exact information aboutmore » the actual quantum efficiency of the sample. The determination of the quantum efficiency by means of fluorescence lifetime shows inaccuracies when refractive index changing elements such as fluorine are incorporated into the glass. Since fluorine not only eliminates OH from the glass but also increases the “intrinsic” radiative fluorescence lifetime, which is needed to calculate the quantum efficiency, it is difficult to separate lifetime quenching from purely radiative effects. The approach used in this contribution offers a possibility to disentangle radiative from non-radiative properties which is not possible by using fluorescence lifetime measurements alone and allows an accurate determination of the quantum efficiency of a given sample. The comparative determination by an integrating sphere setup leads to the well-known problem of reabsorption which embodies itself in the measurement of too low quantum efficiencies, especially for samples with small quantum efficiencies.« less

Highly-efficient quantum memory for polarization qubits in a spatially-multiplexed cold atomic ensemble.

PubMed

Vernaz-Gris, Pierre; Huang, Kun; Cao, Mingtao; Sheremet, Alexandra S; Laurat, Julien

2018-01-25

Quantum memory for flying optical qubits is a key enabler for a wide range of applications in quantum information. A critical figure of merit is the overall storage and retrieval efficiency. So far, despite the recent achievements of efficient memories for light pulses, the storage of qubits has suffered from limited efficiency. Here we report on a quantum memory for polarization qubits that combines an average conditional fidelity above 99% and efficiency around 68%, thereby demonstrating a reversible qubit mapping where more information is retrieved than lost. The qubits are encoded with weak coherent states at the single-photon level and the memory is based on electromagnetically-induced transparency in an elongated laser-cooled ensemble of cesium atoms, spatially multiplexed for dual-rail storage. This implementation preserves high optical depth on both rails, without compromise between multiplexing and storage efficiency. Our work provides an efficient node for future tests of quantum network functionalities and advanced photonic circuits.

Improving the efficiency of quantum hash function by dense coding of coin operators in discrete-time quantum walk

NASA Astrophysics Data System (ADS)

Yang, YuGuang; Zhang, YuChen; Xu, Gang; Chen, XiuBo; Zhou, Yi-Hua; Shi, WeiMin

2018-03-01

Li et al. first proposed a quantum hash function (QHF) in a quantum-walk architecture. In their scheme, two two-particle interactions, i.e., I interaction and π-phase interaction are introduced and the choice of I or π-phase interactions at each iteration depends on a message bit. In this paper, we propose an efficient QHF by dense coding of coin operators in discrete-time quantum walk. Compared with existing QHFs, our protocol has the following advantages: the efficiency of the QHF can be doubled and even more; only one particle is enough and two-particle interactions are unnecessary so that quantum resources are saved. It is a clue to apply the dense coding technique to quantum cryptographic protocols, especially to the applications with restricted quantum resources.

Efficient quantum transmission in multiple-source networks.

PubMed

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-04-02

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency.

Intrinsic retrieval efficiency for quantum memories: A three-dimensional theory of light interaction with an atomic ensemble

NASA Astrophysics Data System (ADS)

Gujarati, Tanvi P.; Wu, Yukai; Duan, Luming

2018-03-01

Duan-Lukin-Cirac-Zoller quantum repeater protocol, which was proposed to realize long distance quantum communication, requires usage of quantum memories. Atomic ensembles interacting with optical beams based on off-resonant Raman scattering serve as convenient on-demand quantum memories. Here, a complete free space, three-dimensional theory of the associated read and write process for this quantum memory is worked out with the aim of understanding intrinsic retrieval efficiency. We develop a formalism to calculate the transverse mode structure for the signal and the idler photons and use the formalism to study the intrinsic retrieval efficiency under various configurations. The effects of atomic density fluctuations and atomic motion are incorporated by numerically simulating this system for a range of realistic experimental parameters. We obtain results that describe the variation in the intrinsic retrieval efficiency as a function of the memory storage time for skewed beam configuration at a finite temperature, which provides valuable information for optimization of the retrieval efficiency in experiments.

Terahertz Quantum Cascade Structures Using Step Wells And Longitudinal Optical-Phonon Scattering

DTIC Science & Technology

2009-06-01

emit many photons, which allows for differential quantum efficiencies greater than unity and hence higher power output. QCLs have been successfully...maintained. The step in the well allows for high injection efficiency due to the spatial separation of the wavefunctions. A step quantum well, in which at...III.D.34), the photon density is determined to be ( )thiphotonphoton IILeAn − Γ = ητ (III.D.35) where the internal quantum efficiency

Turbulent Swirling Flow Downstream of an Abrupt Pipe Expansion -- Modeling and Experimental Measurements.

DTIC Science & Technology

1982-07-01

aerospace engineering um~Ŕ" eqe~vswse 0engiee amp snry stem englnerlag. enI~e so ISaCW , meterI scienc Turbulent Swirling Flow Dowstreas of an Abrupt...With the horizontal test section and circumferentially local measurements, the extent of the influence of gravity -induced convection can be determined

Counterfactual quantum key distribution with high efficiency

NASA Astrophysics Data System (ADS)

Sun, Ying; Wen, Qiao-Yan

2010-11-01

In a counterfactual quantum key distribution scheme, a secret key can be generated merely by transmitting the split vacuum pulses of single particles. We improve the efficiency of the first quantum key distribution scheme based on the counterfactual phenomenon. This scheme not only achieves the same security level as the original one but also has higher efficiency. We also analyze how to achieve the optimal efficiency under various conditions.

Counterfactual quantum key distribution with high efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun Ying; Beijing Electronic Science and Technology Institute, Beijing 100070; Wen Qiaoyan

2010-11-15

In a counterfactual quantum key distribution scheme, a secret key can be generated merely by transmitting the split vacuum pulses of single particles. We improve the efficiency of the first quantum key distribution scheme based on the counterfactual phenomenon. This scheme not only achieves the same security level as the original one but also has higher efficiency. We also analyze how to achieve the optimal efficiency under various conditions.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

NASA Astrophysics Data System (ADS)

Steiner, M. A.; Perl, E. E.; Geisz, J. F.; Friedman, D. J.; Jain, N.; Levi, D.; Horner, G.

2017-04-01

We demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important the bandgap be determined from the external quantum efficiency.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

DOE PAGES

Steiner, Myles A.; Perl, E. E.; Geisz, J. F.; ...

2017-04-28

Here, we demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important that the bandgap be determined from the external quantum efficiency.

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

PubMed

Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun; Ko, Suk-Min; Cho, Yong-Hoon

2013-01-01

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.

Wide-Band, High-Quantum-Efficiency Photodetector

NASA Technical Reports Server (NTRS)

Jackson, Deborah; Wilson, Daniel; Stern, Jeffrey

2007-01-01

A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

Quantum transport in the FMO photosynthetic light-harvesting complex.

PubMed

Karafyllidis, Ioannis G

2017-06-01

The very high light-harvesting efficiency of natural photosynthetic systems in conjunction with recent experiments, which showed quantum-coherent energy transfer in photosynthetic complexes, raised questions regarding the presence of non-trivial quantum effects in photosynthesis. Grover quantum search, quantum walks, and entanglement have been investigated as possible effects that lead to this efficiency. Here we explain the near-unit photosynthetic efficiency without invoking non-trivial quantum effects. Instead, we use non-equilibrium Green's functions, a mesoscopic method used to study transport in nano-conductors to compute the transmission function of the Fenna-Matthews-Olson (FMO) complex using an experimentally derived exciton Hamiltonian. The chlorosome antenna and the reaction center play the role of input and output contacts, connected to the FMO complex. We show that there are two channels for which the transmission is almost unity. Our analysis also revealed a dephasing-driven regulation mechanism that maintains the efficiency in the presence of varying dephasing potentials.

A Biomimetic-Computational Approach to Optimizing the Quantum Efficiency of Photovoltaics

NASA Astrophysics Data System (ADS)

Perez, Lisa M.; Holzenburg, Andreas

The most advanced low-cost organic photovoltaic cells have a quantum efficiency of 10%. This is in stark contrast to plant/bacterial light-harvesting systems which offer quantum efficiencies close to unity. Of particular interest is the highly effective quantum coherence-enabled energy transfer (Fig. 1). Noting that quantum coherence is promoted by charged residues and local dielectrics, classical atomistic simulations and time-dependent density functional theory (DFT) are used to identify charge/dielectric patterns and electronic coupling at exactly defined energy transfer interfaces. The calculations make use of structural information obtained on photosynthetic protein-pigment complexes while still in the native membrane making it possible to establish a link between supramolecular organization and quantum coherence in terms of what length scales enable fast energy transport and prevent quenching. Calculating energy transfer efficiencies between components based on different proximities will permit the search for patterns that enable defining material properties suitable for advanced photovoltaics.

Highly efficient frequency conversion with bandwidth compression of quantum light

PubMed Central

Allgaier, Markus; Ansari, Vahid; Sansoni, Linda; Eigner, Christof; Quiring, Viktor; Ricken, Raimund; Harder, Georg; Brecht, Benjamin; Silberhorn, Christine

2017-01-01

Hybrid quantum networks rely on efficient interfacing of dissimilar quantum nodes, as elements based on parametric downconversion sources, quantum dots, colour centres or atoms are fundamentally different in their frequencies and bandwidths. Although pulse manipulation has been demonstrated in very different systems, to date no interface exists that provides both an efficient bandwidth compression and a substantial frequency translation at the same time. Here we demonstrate an engineered sum-frequency-conversion process in lithium niobate that achieves both goals. We convert pure photons at telecom wavelengths to the visible range while compressing the bandwidth by a factor of 7.47 under preservation of non-classical photon-number statistics. We achieve internal conversion efficiencies of 61.5%, significantly outperforming spectral filtering for bandwidth compression. Our system thus makes the connection between previously incompatible quantum systems as a step towards usable quantum networks. PMID:28134242

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulationmore » results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.« less

Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

PubMed

Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

2015-12-30

We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

Quantum autoencoders for efficient compression of quantum data

NASA Astrophysics Data System (ADS)

Romero, Jonathan; Olson, Jonathan P.; Aspuru-Guzik, Alan

2017-12-01

Classical autoencoders are neural networks that can learn efficient low-dimensional representations of data in higher-dimensional space. The task of an autoencoder is, given an input x, to map x to a lower dimensional point y such that x can likely be recovered from y. The structure of the underlying autoencoder network can be chosen to represent the data on a smaller dimension, effectively compressing the input. Inspired by this idea, we introduce the model of a quantum autoencoder to perform similar tasks on quantum data. The quantum autoencoder is trained to compress a particular data set of quantum states, where a classical compression algorithm cannot be employed. The parameters of the quantum autoencoder are trained using classical optimization algorithms. We show an example of a simple programmable circuit that can be trained as an efficient autoencoder. We apply our model in the context of quantum simulation to compress ground states of the Hubbard model and molecular Hamiltonians.

Efficient Quantum Transmission in Multiple-Source Networks

PubMed Central

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-01-01

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency. PMID:24691590

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Efficient multiuser quantum cryptography network based on entanglement.

PubMed

Xue, Peng; Wang, Kunkun; Wang, Xiaoping

2017-04-04

We present an efficient quantum key distribution protocol with a certain entangled state to solve a special cryptographic task. Also, we provide a proof of security of this protocol by generalizing the proof of modified of Lo-Chau scheme. Based on this two-user scheme, a quantum cryptography network protocol is proposed without any quantum memory.

Efficient multiuser quantum cryptography network based on entanglement

PubMed Central

Xue, Peng; Wang, Kunkun; Wang, Xiaoping

2017-01-01

We present an efficient quantum key distribution protocol with a certain entangled state to solve a special cryptographic task. Also, we provide a proof of security of this protocol by generalizing the proof of modified of Lo-Chau scheme. Based on this two-user scheme, a quantum cryptography network protocol is proposed without any quantum memory. PMID:28374854

Efficient multiuser quantum cryptography network based on entanglement

NASA Astrophysics Data System (ADS)

Xue, Peng; Wang, Kunkun; Wang, Xiaoping

2017-04-01

We present an efficient quantum key distribution protocol with a certain entangled state to solve a special cryptographic task. Also, we provide a proof of security of this protocol by generalizing the proof of modified of Lo-Chau scheme. Based on this two-user scheme, a quantum cryptography network protocol is proposed without any quantum memory.

Quantum entanglement helps in improving economic efficiency

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Ju, Chenyong; Li, Hui

2005-02-01

We propose an economic regulation approach based on quantum game theory for the government to reduce the abuses of oligopolistic competition. Theoretical analysis shows that this approach can help government improve the economic efficiency of the oligopolistic market, and help prevent monopoly due to incorrect information. These advantages are completely attributed to the quantum entanglement, a unique quantum mechanical character.

Single-hidden-layer feed-forward quantum neural network based on Grover learning.

PubMed

Liu, Cheng-Yi; Chen, Chein; Chang, Ching-Ter; Shih, Lun-Min

2013-09-01

In this paper, a novel single-hidden-layer feed-forward quantum neural network model is proposed based on some concepts and principles in the quantum theory. By combining the quantum mechanism with the feed-forward neural network, we defined quantum hidden neurons and connected quantum weights, and used them as the fundamental information processing unit in a single-hidden-layer feed-forward neural network. The quantum neurons make a wide range of nonlinear functions serve as the activation functions in the hidden layer of the network, and the Grover searching algorithm outstands the optimal parameter setting iteratively and thus makes very efficient neural network learning possible. The quantum neuron and weights, along with a Grover searching algorithm based learning, result in a novel and efficient neural network characteristic of reduced network, high efficient training and prospect application in future. Some simulations are taken to investigate the performance of the proposed quantum network and the result show that it can achieve accurate learning. Copyright © 2013 Elsevier Ltd. All rights reserved.

Hybrid quantum computing with ancillas

NASA Astrophysics Data System (ADS)

Proctor, Timothy J.; Kendon, Viv

2016-10-01

In the quest to build a practical quantum computer, it is important to use efficient schemes for enacting the elementary quantum operations from which quantum computer programs are constructed. The opposing requirements of well-protected quantum data and fast quantum operations must be balanced to maintain the integrity of the quantum information throughout the computation. One important approach to quantum operations is to use an extra quantum system - an ancilla - to interact with the quantum data register. Ancillas can mediate interactions between separated quantum registers, and by using fresh ancillas for each quantum operation, data integrity can be preserved for longer. This review provides an overview of the basic concepts of the gate model quantum computer architecture, including the different possible forms of information encodings - from base two up to continuous variables - and a more detailed description of how the main types of ancilla-mediated quantum operations provide efficient quantum gates.

Efficiency and its bounds for a quantum Einstein engine at maximum power.

PubMed

Yan, H; Guo, Hao

2012-11-01

We study a quantum thermal engine model for which the heat transfer law is determined by Einstein's theory of radiation. The working substance of the quantum engine is assumed to be a two-level quantum system of which the constituent particles obey Maxwell-Boltzmann (MB), Fermi-Dirac (FD), or Bose-Einstein (BE) distributions, respectively, at equilibrium. The thermal efficiency and its bounds at maximum power of these models are derived and discussed in the long and short thermal contact time limits. The similarity and difference between these models are discussed. We also compare the efficiency bounds of this quantum thermal engine to those of its classical counterpart.

Light storage in a cold atomic ensemble with a high optical depth

NASA Astrophysics Data System (ADS)

Park, Kwang-Kyoon; Chough, Young-Tak; Kim, Yoon-Ho

2017-06-01

A quantum memory with a high storage efficiency and a long coherence time is an essential element in quantum information applications. Here, we report our recent development of an optical quantum memory with a rubidium-87 cold atom ensemble. By increasing the optical depth of the medium, we have achieved a storage efficiency of 65% and a coherence time of 51 μs for a weak laser pulse. The result of a numerical analysis based on the Maxwell-Bloch equations agrees well with the experimental results. Our result paves the way toward an efficient optical quantum memory and may find applications in photonic quantum information processing.

The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

NASA Technical Reports Server (NTRS)

Rosenfeld, D.; Bahir, G.

1993-01-01

A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

Preparation of reflective CsI photocathodes with reproducible high quantum efficiency

NASA Astrophysics Data System (ADS)

Maier-Komor, P.; Bauer, B. B.; Friese, J.; Gernhäuser, R.; Kienle, P.; Körner, H. J.; Montermann, G.; Zeitelhack, K.

1995-02-01

CsI as a solid UV-photocathode material has many promising applications in fast gaseous photon detectors. They are proposed in large area Ring Imaging CHerenkov (RICH) devices in forthcoming experiments at various high-energy particle accelerators. A high photon-to-electron conversion efficiency is a basic requirement for the successful operation of these devices. High reproducible quantum efficiencies could be achieved with CsI layers prepared by electron beam evaporation from a water-cooled copper crucible. CsI films were deposited in the thickness range of 30 to 500 μg/cm 2. Absorption coefficients and quantum efficiencies were measured in the wavelength region of 150 nm to 250 nm. The influence of various evaporation parameters on the quantum efficiency were investigated.

Multiple-state quantum Otto engine, 1D box system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Latifah, E., E-mail: enylatifah@um.ac.id; Purwanto, A.

2014-03-24

Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

Analysis of the external and internal quantum efficiency of multi-emitter, white organic light emitting diodes

NASA Astrophysics Data System (ADS)

Furno, Mauro; Rosenow, Thomas C.; Gather, Malte C.; Lüssem, Björn; Leo, Karl

2012-10-01

We report on a theoretical framework for the efficiency analysis of complex, multi-emitter organic light emitting diodes (OLEDs). The calculation approach makes use of electromagnetic modeling to quantify the overall OLED photon outcoupling efficiency and a phenomenological description for electrical and excitonic processes. From the comparison of optical modeling results and measurements of the total external quantum efficiency, we obtain reliable estimates of internal quantum yield. As application of the model, we analyze high-efficiency stacked white OLEDs and comment on the various efficiency loss channels present in the devices.

Fundamental rate-loss trade-off for the quantum internet

NASA Astrophysics Data System (ADS)

Azuma, Koji; Mizutani, Akihiro; Lo, Hoi-Kwong

2016-11-01

The quantum internet holds promise for achieving quantum communication--such as quantum teleportation and quantum key distribution (QKD)--freely between any clients all over the globe, as well as for the simulation of the evolution of quantum many-body systems. The most primitive function of the quantum internet is to provide quantum entanglement or a secret key to two points efficiently, by using intermediate nodes connected by optical channels with each other. Here we derive a fundamental rate-loss trade-off for a quantum internet protocol, by generalizing the Takeoka-Guha-Wilde bound to be applicable to any network topology. This trade-off has essentially no scaling gap with the quantum communication efficiencies of protocols known to be indispensable to long-distance quantum communication, such as intercity QKD and quantum repeaters. Our result--putting a practical but general limitation on the quantum internet--enables us to grasp the potential of the future quantum internet.

Fundamental rate-loss trade-off for the quantum internet

PubMed Central

Azuma, Koji; Mizutani, Akihiro; Lo, Hoi-Kwong

2016-01-01

The quantum internet holds promise for achieving quantum communication—such as quantum teleportation and quantum key distribution (QKD)—freely between any clients all over the globe, as well as for the simulation of the evolution of quantum many-body systems. The most primitive function of the quantum internet is to provide quantum entanglement or a secret key to two points efficiently, by using intermediate nodes connected by optical channels with each other. Here we derive a fundamental rate-loss trade-off for a quantum internet protocol, by generalizing the Takeoka–Guha–Wilde bound to be applicable to any network topology. This trade-off has essentially no scaling gap with the quantum communication efficiencies of protocols known to be indispensable to long-distance quantum communication, such as intercity QKD and quantum repeaters. Our result—putting a practical but general limitation on the quantum internet—enables us to grasp the potential of the future quantum internet. PMID:27886172

Fundamental rate-loss trade-off for the quantum internet.

PubMed

Azuma, Koji; Mizutani, Akihiro; Lo, Hoi-Kwong

2016-11-25

The quantum internet holds promise for achieving quantum communication-such as quantum teleportation and quantum key distribution (QKD)-freely between any clients all over the globe, as well as for the simulation of the evolution of quantum many-body systems. The most primitive function of the quantum internet is to provide quantum entanglement or a secret key to two points efficiently, by using intermediate nodes connected by optical channels with each other. Here we derive a fundamental rate-loss trade-off for a quantum internet protocol, by generalizing the Takeoka-Guha-Wilde bound to be applicable to any network topology. This trade-off has essentially no scaling gap with the quantum communication efficiencies of protocols known to be indispensable to long-distance quantum communication, such as intercity QKD and quantum repeaters. Our result-putting a practical but general limitation on the quantum internet-enables us to grasp the potential of the future quantum internet.

Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

NASA Astrophysics Data System (ADS)

Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.

2018-05-01

A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.

Highly Simplified Reddish Orange Phosphorescent Organic Light-Emitting Diodes Incorporating a Novel Carrier- and Exciton-Confining Spiro-Exciplex-Forming Host for Reduced Efficiency Roll-off.

PubMed

Xu, Ting; Zhang, Ye-Xin; Wang, Bo; Huang, Chen-Chao; Murtaza, Imran; Meng, Hong; Liao, Liang-Sheng

2017-01-25

A novel exciplex-forming host is applied so as to design highly simplified reddish orange light-emitting diodes (OLEDs) with low driving voltage, high efficiency, and an extraordinarily low efficiency roll-off, by combining N,N-10-triphenyl-10H-spiro [acridine-9,9'-fluoren]-3'-amine (SAFDPA) with 4,7-diphenyl-1,10-phenanthroline (Bphen) doped with trivalent iridium complex bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate)iridium(III) (Ir(MDQ) 2 (acac)). The reddish orange OLEDs achieve a strikingly high power efficiency (PE) of 31.80 lm/W with an ultralow threshold voltage of 2.24 V which is almost equal to the triplet energy level of the phosphorescent reddish orange emitting dopant. The power efficiency of the device with the exciplex-forming host is enhanced, achieving 36.2% mainly owing to the lower operating voltage by the novel exciplex forming cohost, compared with the reference device (23.54 lm/W). Moreover, the OLEDs show extraordinarily low current efficiency (CE) roll-off to 1.41% at the brightness from 500 to 5000 cd/m 2 with a maximal CE of 32.87 cd/A (EQE max = 11.01%). The devices display a good reddish orange color (CIE of (0.628, 0.372) at 500 cd/m 2 ) nearly without color shift with increasing brightness. Co-host architecture phosphorescent OLEDs show a simpler device structure, lower working voltage, and a better efficiency and stability than those of the reference devices without the cohost architecture, which helps to simplify the OLED structure, lower the cost, and popularize OLED technology.

Efficiency at Maximum Power Output of a Quantum-Mechanical Brayton Cycle

NASA Astrophysics Data System (ADS)

Yuan, Yuan; He, Ji-Zhou; Gao, Yong; Wang, Jian-Hui

2014-03-01

The performance in finite time of a quantum-mechanical Brayton engine cycle is discussed, without introduction of temperature. The engine model consists of two quantum isoenergetic and two quantum isobaric processes, and works with a single particle in a harmonic trap. Directly employing the finite-time thermodynamics, the efficiency at maximum power output is determined. Extending the harmonic trap to a power-law trap, we find that the efficiency at maximum power is independent of any parameter involved in the model, but depends on the confinement of the trapping potential.

Reliable quantum communication over a quantum relay channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gyongyosi, Laszlo, E-mail: gyongyosi@hit.bme.hu; Imre, Sandor

2014-12-04

We show that reliable quantum communication over an unreliable quantum relay channels is possible. The coding scheme combines the results on the superadditivity of quantum channels and the efficient quantum coding approaches.

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, Brian W.; Hanak, Joseph J.

1986-01-01

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, B.W.; Hanak, J.J.

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Communications: quantum teleportation across the Danube.

PubMed

Ursin, Rupert; Jennewein, Thomas; Aspelmeyer, Markus; Kaltenbaek, Rainer; Lindenthal, Michael; Walther, Philip; Zeilinger, Anton

2004-08-19

Efficient long-distance quantum teleportation is crucial for quantum communication and quantum networking schemes. Here we describe the high-fidelity teleportation of photons over a distance of 600 metres across the River Danube in Vienna, with the optimal efficiency that can be achieved using linear optics. Our result is a step towards the implementation of a quantum repeater, which will enable pure entanglement to be shared between distant parties in a public environment and eventually on a worldwide scale.

Efficient entanglement distillation without quantum memory.

PubMed

Abdelkhalek, Daniela; Syllwasschy, Mareike; Cerf, Nicolas J; Fiurášek, Jaromír; Schnabel, Roman

2016-05-31

Entanglement distribution between distant parties is an essential component to most quantum communication protocols. Unfortunately, decoherence effects such as phase noise in optical fibres are known to demolish entanglement. Iterative (multistep) entanglement distillation protocols have long been proposed to overcome decoherence, but their probabilistic nature makes them inefficient since the success probability decays exponentially with the number of steps. Quantum memories have been contemplated to make entanglement distillation practical, but suitable quantum memories are not realised to date. Here, we present the theory for an efficient iterative entanglement distillation protocol without quantum memories and provide a proof-of-principle experimental demonstration. The scheme is applied to phase-diffused two-mode-squeezed states and proven to distil entanglement for up to three iteration steps. The data are indistinguishable from those that an efficient scheme using quantum memories would produce. Since our protocol includes the final measurement it is particularly promising for enhancing continuous-variable quantum key distribution.

Efficient entanglement distillation without quantum memory

PubMed Central

Abdelkhalek, Daniela; Syllwasschy, Mareike; Cerf, Nicolas J.; Fiurášek, Jaromír; Schnabel, Roman

2016-01-01

Entanglement distribution between distant parties is an essential component to most quantum communication protocols. Unfortunately, decoherence effects such as phase noise in optical fibres are known to demolish entanglement. Iterative (multistep) entanglement distillation protocols have long been proposed to overcome decoherence, but their probabilistic nature makes them inefficient since the success probability decays exponentially with the number of steps. Quantum memories have been contemplated to make entanglement distillation practical, but suitable quantum memories are not realised to date. Here, we present the theory for an efficient iterative entanglement distillation protocol without quantum memories and provide a proof-of-principle experimental demonstration. The scheme is applied to phase-diffused two-mode-squeezed states and proven to distil entanglement for up to three iteration steps. The data are indistinguishable from those that an efficient scheme using quantum memories would produce. Since our protocol includes the final measurement it is particularly promising for enhancing continuous-variable quantum key distribution. PMID:27241946

High Storage Efficiency and Large Fractional Delay of EIT-Based Memory

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite

2013-05-01

In long-distance quantum communication and optical quantum computation, an efficient and long-lived quantum memory is an important component. We first experimentally demonstrated that a time-space-reversing method plus the optimum pulse shape can improve the storage efficiency (SE) of light pulses to 78% in cold media based on the effect of electromagnetically induced transparency (EIT). We obtain a large fractional delay of 74 at 50% SE, which is the best record so far. The measured classical fidelity of the recalled pulse is higher than 90% and nearly independent of the storage time, implying that the optical memory maintains excellent phase coherence. Our results suggest the current result may be readily applied to single-photon quantum states due to quantum nature of the EIT light-matter inference. This study advances the EIT-based quantum memory in practical quantum information applications.

Efficient hydrogen isotopologues separation through a tunable potential barrier: The case of a C2N membrane.

PubMed

Qu, Yuanyuan; Li, Feng; Zhao, Mingwen

2017-05-03

Isotopes separation through quantum sieving effect of membranes is quite promising for industrial applications. For the light hydrogen isotopologues (eg. H 2 , D 2 ), the confinement of potential wells in porous membranes to isotopologues was commonly regarded to be crucial for highly efficient separation ability. Here, we demonstrate from first-principles that a potential barrier is also favorable for efficient hydrogen isotopologues separation. Taking an already-synthesized two-dimensional carbon nitride (C 2 N-h2D) as an example, we predict that the competition between quantum tunneling and zero-point-energy (ZPE) effects regulated by the tensile strain leads to high selectivity and permeance. Both kinetic quantum sieving and equilibrium quantum sieving effects are considered. The quantum effects revealed in this work offer a prospective strategy for highly efficient hydrogen isotopologues separation.

Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination

NASA Astrophysics Data System (ADS)

Li, Xiyan; Zhao, Yong-Biao; Fan, Fengjia; Levina, Larissa; Liu, Min; Quintero-Bermudez, Rafael; Gong, Xiwen; Quan, Li Na; Fan, James; Yang, Zhenyu; Hoogland, Sjoerd; Voznyy, Oleksandr; Lu, Zheng-Hong; Sargent, Edward H.

2018-03-01

The external quantum efficiencies of state-of-the-art colloidal quantum dot light-emitting diodes (QLEDs) are now approaching the limit set by the out-coupling efficiency. However, the brightness of these devices is constrained by the use of poorly conducting emitting layers, a consequence of the present-day reliance on long-chain organic capping ligands. Here, we report how conductive and passivating halides can be implemented in Zn chalcogenide-shelled colloidal quantum dots to enable high-brightness green QLEDs. We use a surface management reagent, thionyl chloride (SOCl2), to chlorinate the carboxylic group of oleic acid and graft the surfaces of the colloidal quantum dots with passivating chloride anions. This results in devices with an improved mobility that retain high external quantum efficiencies in the high-injection-current region and also feature a reduced turn-on voltage of 2.5 V. The treated QLEDs operate with a brightness of 460,000 cd m-2, significantly exceeding that of all previously reported solution-processed LEDs.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Fused Silica Ion Trap Chip with Efficient Optical Collection System for Timekeeping, Sensing, and Emulation

DTIC Science & Technology

2015-01-22

applications in fast single photon sources, quantum repeater circuitry, and high fidelity remote entanglement of atoms for quantum information protocols. We...fluorescence for motion/force sensors through Doppler velocimetry; and for the efficient collection of single photons from trapped ions for...Doppler velocimetry; and for the efficient collection of single photons from trapped ions for applications in fast single photon sources, quantum

All-photonic quantum repeaters

PubMed Central

Azuma, Koji; Tamaki, Kiyoshi; Lo, Hoi-Kwong

2015-01-01

Quantum communication holds promise for unconditionally secure transmission of secret messages and faithful transfer of unknown quantum states. Photons appear to be the medium of choice for quantum communication. Owing to photon losses, robust quantum communication over long lossy channels requires quantum repeaters. It is widely believed that a necessary and highly demanding requirement for quantum repeaters is the existence of matter quantum memories. Here we show that such a requirement is, in fact, unnecessary by introducing the concept of all-photonic quantum repeaters based on flying qubits. In particular, we present a protocol based on photonic cluster-state machine guns and a loss-tolerant measurement equipped with local high-speed active feedforwards. We show that, with such all-photonic quantum repeaters, the communication efficiency scales polynomially with the channel distance. Our result paves a new route towards quantum repeaters with efficient single-photon sources rather than matter quantum memories. PMID:25873153

Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Dongwei; Guo, Fengyun, E-mail: guowen@hit.edu.cn; Li, Xiaochao

2016-03-21

The authors report the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 μm. It is found that the quantum efficiency and responsivity show a clear delineation in comparison to the doping concentration. The quantum efficiency is further improved by gradually doping in the absorbing region. At 77 K, the 50% cutoff wavelength of the VLWIR detector is 18 μm, and the R{sub 0}A is kept at a stable value of 6 Ω cm{sup 2}. Different beryllium concentration leads to an increase of an average quantum efficiency in the 8–15 μmmore » window from 35% to 55% with a π-region thickness of 3.0 μm, for U{sub bias} = −0.3 V, and no anti-reflection coating. As for a further result, the quantum efficiency reaches at a maximum value of 66% by gradually doping in the absorbing region with the peak detectivity of 3.33 × 10{sup 10 }cm Hz{sup 1/2}/W at 15 μm.« less

Coherent Optical Memory with High Storage Efficiency and Large Fractional Delay

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A.

2013-02-01

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Coherent optical memory with high storage efficiency and large fractional delay.

PubMed

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A

2013-02-22

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

High efficiency quantum cascade laser frequency comb.

PubMed

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-03-06

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm -1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy.

High efficiency quantum cascade laser frequency comb

PubMed Central

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-01-01

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm−1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy. PMID:28262834

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Efficiency of quantum vs. classical annealing in nonconvex learning problems

PubMed Central

Zecchina, Riccardo

2018-01-01

Quantum annealers aim at solving nonconvex optimization problems by exploiting cooperative tunneling effects to escape local minima. The underlying idea consists of designing a classical energy function whose ground states are the sought optimal solutions of the original optimization problem and add a controllable quantum transverse field to generate tunneling processes. A key challenge is to identify classes of nonconvex optimization problems for which quantum annealing remains efficient while thermal annealing fails. We show that this happens for a wide class of problems which are central to machine learning. Their energy landscapes are dominated by local minima that cause exponential slowdown of classical thermal annealers while simulated quantum annealing converges efficiently to rare dense regions of optimal solutions. PMID:29382764

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Highly retrievable spin-wave-photon entanglement source.

PubMed

Yang, Sheng-Jun; Wang, Xu-Jie; Li, Jun; Rui, Jun; Bao, Xiao-Hui; Pan, Jian-Wei

2015-05-29

Entanglement between a single photon and a quantum memory forms the building blocks for a quantum repeater and quantum network. Previous entanglement sources are typically with low retrieval efficiency, which limits future larger-scale applications. Here, we report a source of highly retrievable spin-wave-photon entanglement. Polarization entanglement is created through interaction of a single photon with an ensemble of atoms inside a low-finesse ring cavity. The cavity is engineered to be resonant for dual spin-wave modes, which thus enables efficient retrieval of the spin-wave qubit. An intrinsic retrieval efficiency up to 76(4)% has been observed. Such a highly retrievable atom-photon entanglement source will be very useful in future larger-scale quantum repeater and quantum network applications.

Impact induced response spectrum for the safety evaluation of the high flux isotope reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, S.J.

1997-05-01

The dynamic impact to the nearby HFIR reactor vessel caused by heavy load drop is analyzed. The impact calculation is carried out by applying the ABAQUS computer code. An impact-induced response spectrum is constructed in order to evaluate whether the HFIR vessel and the shutdown mechanism may be disabled. For the frequency range less than 10 Hz, the maximum spectral velocity of impact is approximately equal to that of the HFIR seismic design-basis spectrum. For the frequency range greater than 10 Hz, the impact-induced response spectrum is shown to cause no effect to the control rod and the shutdown mechanism.more » An earlier seismic safety assessment for the HFIR control and shutdown mechanism was made by EQE. Based on EQE modal solution that is combined with the impact-induced spectrum, it is concluded that the impact will not cause any damage to the shutdown mechanism, even while the reactor is in operation. The present method suggests a general approach for evaluating the impact induced damage to the reactor by applying the existing finite element modal solution that has been carried out for the seismic evaluation of the reactor.« less

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar.

PubMed

Ding, Xing; He, Yu; Duan, Z-C; Gregersen, Niels; Chen, M-C; Unsleber, S; Maier, S; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2016-01-15

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Multi-party semi-quantum key distribution-convertible multi-party semi-quantum secret sharing

NASA Astrophysics Data System (ADS)

Yu, Kun-Fei; Gu, Jun; Hwang, Tzonelih; Gope, Prosanta

2017-08-01

This paper proposes a multi-party semi-quantum secret sharing (MSQSS) protocol which allows a quantum party (manager) to share a secret among several classical parties (agents) based on GHZ-like states. By utilizing the special properties of GHZ-like states, the proposed scheme can easily detect outside eavesdropping attacks and has the highest qubit efficiency among the existing MSQSS protocols. Then, we illustrate an efficient way to convert the proposed MSQSS protocol into a multi-party semi-quantum key distribution (MSQKD) protocol. The proposed approach is even useful to convert all the existing measure-resend type of semi-quantum secret sharing protocols into semi-quantum key distribution protocols.

Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film

NASA Astrophysics Data System (ADS)

Zheng, Fengang; Zhang, Peng; Wang, Xiaofeng; Huang, Wen; Zhang, Jinxing; Shen, Mingrong; Dong, Wen; Fang, Liang; Bai, Yongbin; Shen, Xiaoqing; Sun, Hua; Hao, Jianhua

2014-02-01

PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm-2, AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm-2, AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr05757g

Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%

PubMed Central

2015-01-01

Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may be reduced due to ultrafast intraband relaxation processes that compete with MEG at early times. Quantum dots of materials that display reduced carrier cooling rates (e.g., PbTe) are therefore promising candidates to increase the impact of MEG in photovoltaic devices. Here we demonstrate PbTe quantum dot-based solar cells, which produce extractable charge carrier pairs with an external quantum efficiency above 120%, and we estimate an internal quantum efficiency exceeding 150%. Resolving the charge carrier kinetics on the ultrafast time scale with pump–probe transient absorption and pump–push–photocurrent measurements, we identify a delayed cooling effect above the threshold energy for MEG. PMID:26488847

Energy efficient quantum machines

NASA Astrophysics Data System (ADS)

Abah, Obinna; Lutz, Eric

2017-05-01

We investigate the performance of a quantum thermal machine operating in finite time based on shortcut-to-adiabaticity techniques. We compute efficiency and power for a paradigmatic harmonic quantum Otto engine by taking the energetic cost of the shortcut driving explicitly into account. We demonstrate that shortcut-to-adiabaticity machines outperform conventional ones for fast cycles. We further derive generic upper bounds on both quantities, valid for any heat engine cycle, using the notion of quantum speed limit for driven systems. We establish that these quantum bounds are tighter than those stemming from the second law of thermodynamics.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering.

PubMed

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N; Mohammed, Omar F; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H; Bakr, Osman M

2016-10-01

A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX 3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Primary quantum yields of NO2 photodissociation

NASA Technical Reports Server (NTRS)

Gardner, Edward P.; Sperry, Paul D.; Calvert, Jack G.

1987-01-01

The quantum yields of formation of NO, O2, and NO2 loss are measured for NO2 vapor at low pressures (0.13-0.30 torr) irradiated at 334-405 nm wavelengths and temperature in the range 273-370 K in order to study the primary quantum efficiencies of NO2 photodecomposition. The temperature and wavelength dependences of the primary quantum efficiencies are examined. It is observed that the primary quantum efficiencies increase rapidly from near zero at 424 nm to near unity for excitation at wavelengths less than 394 nm. The theory of Pitts et al. (1964) that the energy deficiency for photodissociation of NO2 excited at wavelengths greater than 397.9 nm is due to the rotational and vibrational energy of the NO2 molecules is confirmed by the data. Values for the primary quantum yields of NO2 photodecomposition as a function of wavelength are presented.

High-efficiency tomographic reconstruction of quantum states by quantum nondemolition measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, J. S.; Centre for Quantum Technologies and Department of Physics, National University of Singapore, 3 Science Drive 2, Singapore 117542; Wei, L. F.

We propose a high-efficiency scheme to tomographically reconstruct an unknown quantum state by using a series of quantum nondemolition (QND) measurements. The proposed QND measurements of the qubits are implemented by probing the stationary transmissions through a driven dispersively coupled resonator. It is shown that only one kind of QND measurement is sufficient to determine all the diagonal elements of the density matrix of the detected quantum state. The remaining nondiagonal elements can be similarly determined by transferring them to the diagonal locations after a series of unitary operations. Compared with the tomographic reconstructions based on the usual destructive projectivemore » measurements (wherein one such measurement can determine only one diagonal element of the density matrix), the present reconstructive approach exhibits significantly high efficiency. Specifically, our generic proposal is demonstrated by the experimental circuit quantum electrodynamics systems with a few Josephson charge qubits.« less

Determination of the Quantum Efficiency of a Light Detector

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2008-01-01

The "quantum efficiency" (QE) is an important property of a light detector. This quantity can be determined in the undergraduate physics laboratory. The experimentally determined QE of a silicon photodiode appeared to be in reasonable agreement with expected values. The experiment confirms the quantum properties of light and seems to be a useful…

Nanocrystal Size-Dependent Efficiency of Quantum Dot Sensitized Solar Cells in the Strongly Coupled CdSe Nanocrystals/TiO2 System.

PubMed

Yun, Hyeong Jin; Paik, Taejong; Diroll, Benjamin; Edley, Michael E; Baxter, Jason B; Murray, Christopher B

2016-06-15

Light absorption and electron injection are important criteria determining solar energy conversion efficiency. In this research, monodisperse CdSe quantum dots (QDs) are synthesized with five different diameters, and the size-dependent solar energy conversion efficiency of CdSe quantum dot sensitized solar cell (QDSSCs) is investigated by employing the atomic inorganic ligand, S(2-). Absorbance measurements and transmission electron microscopy show that the diameters of the uniform CdSe QDs are 2.5, 3.2, 4.2, 6.4, and 7.8 nm. Larger CdSe QDs generate a larger amount of charge under the irradiation of long wavelength photons, as verified by the absorbance results and the measurements of the external quantum efficiencies. However, the smaller QDs exhibit faster electron injection kinetics from CdSe QDs to TiO2 because of the high energy level of CBCdSe, as verified by time-resolved photoluminescence and internal quantum efficiency results. Importantly, the S(2-) ligand significantly enhances the electronic coupling between the CdSe QDs and TiO2, yielding an enhancement of the charge transfer rate at the interfacial region. As a result, the S(2-) ligand helps improve the new size-dependent solar energy conversion efficiency, showing best performance with 4.2-nm CdSe QDs, whereas conventional ligand, mercaptopropionic acid, does not show any differences in efficiency according to the size of the CdSe QDs. The findings reported herein suggest that the atomic inorganic ligand reinforces the influence of quantum confinement on the solar energy conversion efficiency of QDSSCs.

Quantum communication for satellite-to-ground networks with partially entangled states

NASA Astrophysics Data System (ADS)

Chen, Na; Quan, Dong-Xiao; Pei, Chang-Xing; Yang-Hong

2015-02-01

To realize practical wide-area quantum communication, a satellite-to-ground network with partially entangled states is developed in this paper. For efficiency and security reasons, the existing method of quantum communication in distributed wireless quantum networks with partially entangled states cannot be applied directly to the proposed quantum network. Based on this point, an efficient and secure quantum communication scheme with partially entangled states is presented. In our scheme, the source node performs teleportation only after an end-to-end entangled state has been established by entanglement swapping with partially entangled states. Thus, the security of quantum communication is guaranteed. The destination node recovers the transmitted quantum bit with the help of an auxiliary quantum bit and specially defined unitary matrices. Detailed calculations and simulation analyses show that the probability of successfully transferring a quantum bit in the presented scheme is high. In addition, the auxiliary quantum bit provides a heralded mechanism for successful communication. Based on the critical components that are presented in this article an efficient, secure, and practical wide-area quantum communication can be achieved. Project supported by the National Natural Science Foundation of China (Grant Nos. 61072067 and 61372076), the 111 Project (Grant No. B08038), the Fund from the State Key Laboratory of Integrated Services Networks (Grant No. ISN 1001004), and the Fundamental Research Funds for the Central Universities (Grant Nos. K5051301059 and K5051201021).

Finding the quantum thermoelectric with maximal efficiency and minimal entropy production at given power output

NASA Astrophysics Data System (ADS)

Whitney, Robert S.

2015-03-01

We investigate the nonlinear scattering theory for quantum systems with strong Seebeck and Peltier effects, and consider their use as heat engines and refrigerators with finite power outputs. This paper gives detailed derivations of the results summarized in a previous paper [R. S. Whitney, Phys. Rev. Lett. 112, 130601 (2014), 10.1103/PhysRevLett.112.130601]. It shows how to use the scattering theory to find (i) the quantum thermoelectric with maximum possible power output, and (ii) the quantum thermoelectric with maximum efficiency at given power output. The latter corresponds to a minimal entropy production at that power output. These quantities are of quantum origin since they depend on system size over electronic wavelength, and so have no analog in classical thermodynamics. The maximal efficiency coincides with Carnot efficiency at zero power output, but decreases with increasing power output. This gives a fundamental lower bound on entropy production, which means that reversibility (in the thermodynamic sense) is impossible for finite power output. The suppression of efficiency by (nonlinear) phonon and photon effects is addressed in detail; when these effects are strong, maximum efficiency coincides with maximum power. Finally, we show in particular limits (typically without magnetic fields) that relaxation within the quantum system does not allow the system to exceed the bounds derived for relaxation-free systems, however, a general proof of this remains elusive.

Quantum efficiency measurements of eROSITA pnCCDs

NASA Astrophysics Data System (ADS)

Ebermayer, Stefanie; Andritschke, Robert; Elbs, Johannes; Meidinger, Norbert; Strüder, Lothar; Hartmann, Robert; Gottwald, Alexander; Krumrey, Michael; Scholze, Frank

2010-07-01

For the eROSITA X-ray telescope, which is planned to be launched in 2012, detectors were developed and fabricated at the MPI Semiconductor Laboratory. The fully depleted, back-illuminated pnCCDs have an ultrathin pn-junction to improve the low-energy X-ray response function and quantum efficiency. The device thickness of 450 μm is fully sensitive to X-ray photons yielding high quantum efficiency of more than 90% at photon energies of 10 keV. An on-chip filter is deposited on top of the entrance window to suppress visible and UV light which would interfere with the X-ray observations. The pnCCD type developed for the eROSITA telescope was characterized in terms of quantum efficiency and spectral response function. The described measurements were performed in 2009 at the synchrotron radiation sources BESSY II and MLS as cooperation between the MPI Semiconductor Laboratory and the Physikalisch-Technische Bundesanstalt (PTB). Quantum efficiency measurements over a wide range of photon energies from 3 eV to 11 keV as well as spectral response measurements are presented. For X-ray energies from 3 keV to 10 keV the quantum efficiency of the CCD including on-chip filter is shown to be above 90% with an attenuation of visible light of more than five orders of magnitude. A detector response model is described and compared to the measurements.

Recommender engine for continuous-time quantum Monte Carlo methods

NASA Astrophysics Data System (ADS)

Huang, Li; Yang, Yi-feng; Wang, Lei

2017-03-01

Recommender systems play an essential role in the modern business world. They recommend favorable items such as books, movies, and search queries to users based on their past preferences. Applying similar ideas and techniques to Monte Carlo simulations of physical systems boosts their efficiency without sacrificing accuracy. Exploiting the quantum to classical mapping inherent in the continuous-time quantum Monte Carlo methods, we construct a classical molecular gas model to reproduce the quantum distributions. We then utilize powerful molecular simulation techniques to propose efficient quantum Monte Carlo updates. The recommender engine approach provides a general way to speed up the quantum impurity solvers.

Simple and Efficient Single Photon Filter for a Rb-based Quantum Memory

NASA Astrophysics Data System (ADS)

Stack, Daniel; Li, Xiao; Quraishi, Qudsia

2015-05-01

Distribution of entangled quantum states over significant distances is important to the development of future quantum technologies such as long-distance cryptography, networks of atomic clocks, distributed quantum computing, etc. Long-lived quantum memories and single photons are building blocks for systems capable of realizing such applications. The ability to store and retrieve quantum information while filtering unwanted light signals is critical to the operation of quantum memories based on neutral-atom ensembles. We report on an efficient frequency filter which uses a glass cell filled with 85Rb vapor to attenuate noise photons by an order of magnitude with little loss to the single photons associated with the operation of our cold 87Rb quantum memory. An Ar buffer gas is required to differentiate between signal and noise photons or similar statement. Our simple, passive filter requires no optical pumping or external frequency references and provides an additional 18 dB attenuation of our pump laser for every 1 dB loss of the single photon signal. We observe improved non-classical correlations and our data shows that the addition of a frequency filter increases the non-classical correlations and readout efficiency of our quantum memory by ~ 35%.

De-quantisation

NASA Astrophysics Data System (ADS)

Gruska, Jozef

2012-06-01

One of the most basic tasks in quantum information processing, communication and security (QIPCC) research, theoretically deep and practically important, is to find bounds on how really important are inherently quantum resources for speeding up computations. This area of research is bringing a variety of results that imply, often in a very unexpected and counter-intuitive way, that: (a) surprisingly large classes of quantum circuits and algorithms can be efficiently simulated on classical computers; (b) the border line between quantum processes that can and cannot be efficiently simulated on classical computers is often surprisingly thin; (c) the addition of a seemingly very simple resource or a tool often enormously increases the power of available quantum tools. These discoveries have put also a new light on our understanding of quantum phenomena and quantum physics and on the potential of its inherently quantum and often mysteriously looking phenomena. The paper motivates and surveys research and its outcomes in the area of de-quantisation, especially presents various approaches and their outcomes concerning efficient classical simulations of various families of quantum circuits and algorithms. To motivate this area of research some outcomes in the area of de-randomization of classical randomized computations.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-01

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Thermodynamic universality of quantum Carnot engines

DOE PAGES

Gardas, Bartłomiej; Deffner, Sebastian

2015-10-12

The Carnot statement of the second law of thermodynamics poses an upper limit on the efficiency of all heat engines. Recently, it has been studied whether generic quantum features such as coherence and quantum entanglement could allow for quantum devices with efficiencies larger than the Carnot efficiency. The present study shows that this is not permitted by the laws of thermodynamic —independent of the model. We will show that rather the definition of heat has to be modified to account for the thermodynamic cost of maintaining non-Gibbsian equilibrium states. As a result, our theoretical findings are illustrated for two experimentallymore » relevant examples.« less

Efficient quantum circuits for dense circulant and circulant like operators

PubMed Central

Zhou, S. S.

2017-01-01

Circulant matrices are an important family of operators, which have a wide range of applications in science and engineering-related fields. They are, in general, non-sparse and non-unitary. In this paper, we present efficient quantum circuits to implement circulant operators using fewer resources and with lower complexity than existing methods. Moreover, our quantum circuits can be readily extended to the implementation of Toeplitz, Hankel and block circulant matrices. Efficient quantum algorithms to implement the inverses and products of circulant operators are also provided, and an example application in solving the equation of motion for cyclic systems is discussed. PMID:28572988

Quantum engine efficiency bound beyond the second law of thermodynamics.

PubMed

Niedenzu, Wolfgang; Mukherjee, Victor; Ghosh, Arnab; Kofman, Abraham G; Kurizki, Gershon

2018-01-11

According to the second law, the efficiency of cyclic heat engines is limited by the Carnot bound that is attained by engines that operate between two thermal baths under the reversibility condition whereby the total entropy does not increase. Quantum engines operating between a thermal and a squeezed-thermal bath have been shown to surpass this bound. Yet, their maximum efficiency cannot be determined by the reversibility condition, which may yield an unachievable efficiency bound above unity. Here we identify the fraction of the exchanged energy between a quantum system and a bath that necessarily causes an entropy change and derive an inequality for this change. This inequality reveals an efficiency bound for quantum engines energised by a non-thermal bath. This bound does not imply reversibility, unless the two baths are thermal. It cannot be solely deduced from the laws of thermodynamics.

Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

PubMed Central

Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

2015-01-01

Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

Solving search problems by strongly simulating quantum circuits

PubMed Central

Johnson, T. H.; Biamonte, J. D.; Clark, S. R.; Jaksch, D.

2013-01-01

Simulating quantum circuits using classical computers lets us analyse the inner workings of quantum algorithms. The most complete type of simulation, strong simulation, is believed to be generally inefficient. Nevertheless, several efficient strong simulation techniques are known for restricted families of quantum circuits and we develop an additional technique in this article. Further, we show that strong simulation algorithms perform another fundamental task: solving search problems. Efficient strong simulation techniques allow solutions to a class of search problems to be counted and found efficiently. This enhances the utility of strong simulation methods, known or yet to be discovered, and extends the class of search problems known to be efficiently simulable. Relating strong simulation to search problems also bounds the computational power of efficiently strongly simulable circuits; if they could solve all problems in P this would imply that all problems in NP and #P could be solved in polynomial time. PMID:23390585

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Study of optoelectronic properties of thin film solar cell materials Cu2ZnSn(S,Se)4 using multiple correlative spatially-resolved spectroscopy techniques

NASA Astrophysics Data System (ADS)

Chen, Qiong

Containing only earth abundant and environmental friendly elements, quaternary compounds Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe 4 (CZTSe) are considered as promising absorber materials for thin film solar cells. The best record efficiency for this type of thin film solar cell is now 12.6%. As a promising photovoltaic (PV) material, the electrical and optical properties of CZTS(Se) have not been well studied. In this work, an effort has been made to understand the optoelectronic and structural properties, in particular the spatial variations, of CZTS(Se) materials and devices by correlating multiple spatially resolved characterization techniques with sub-micron resolution. Micro-Raman (micro-Raman) spectroscopy was used to analyze the chemistry compositions in CZTS(Se) film; Micro-Photoluminescence (micro-PL) was used to determine the band gap and possible defects. Micro-Laser-Beam-Induced-Current (micro-LBIC) was used to examine the photo-response of CZTS(Se) solar cell in different illumination conditions. Micro-reflectance was used to estimate the reflectance loss. And Micro-I-V measurement was used to compare important electrical parameters from CZTS(Se) solar cells with different device structure or absorber compositions. Scanning electron microscopy and atomic force microscopy were used to characterize the surface morphology. Successfully integrating and correlating these techniques was first demonstrated during the course of this work in our laboratory, and this level of integration and correlation has been rare in the field of PV research. This effort is significant not only for this particular project and also for a wide range of research topics. Applying this approach, in conjunction with high-temperature and high-excitation-power optical spectroscopy, we have been able to reveal the microscopic scale variations among samples and devices that appeared to be very similar from macroscopic material and device characterizations, and thus serve as a very powerful tool to understand the underlying microscopic material structures and predict the potential of improvement in device performance. First, by using an array of correlated aforementioned techniques, microscale inhomogeneity of the CdS layer thickness was found in CZTSe solar cells. Thicker CdS regions are found to cause more light-reflection loss thus yielding lower external quantum efficiencies (EQEs) than the general area. However, these regions show much less efficiency degradation at high illumination density, leading to an inversion of LBIC contrast between the CdS rich regions and general area. By improving the CdS layer uniformity, CZTSe device performance can be significantly boosted. And this finding also points out the possibility of operating thin-film photovoltaic device based on similar materials under substantially higher illumination density for concentrated photovoltaic and photo-detection. Second, Micro-Raman reveals multiple secondary phases such as ZnSe and SnSe within the CZTSe films, which are harmful for solar cell operation. In high-laser-power Raman study, CZTSe shows structural change and decomposition, which indicates poor thermal conductivity of the polycrystalline film. Different behaviors of CZTSe films prepared by different methods are observed in high-laser-power and high-temperature Raman studies, both of which offer effective approaches to examine microscopic structural variation of nominally similar CZTSe films. Because of the achieved high spatial resolution, applying micro-Raman and micro-LBIC, we are able to examine the depth variation of the thin absorber film (in the order of 1 microm) in terms of chemical composition, photo-response, and deposition method dependence. In the third part, micro-I-V curves offer direct measurements of electrical parameters reflecting the effects of the device structure, absorber thickness and elemental ratio on the CZTSe cell performance. NaF precursor, low copper and high zinc content are demonstrated necessary for high performance CZTSe devices. However, one cell with higher copper and lower zinc content experiences slower EQE droop at high power density and part of the film shows better thermal conductivity, which suggests that the CdS/CZTSe heterojunction band alignment depends on the elemental ratio of the CZTSe film and CZTSe may have a potential in concentrated PV application if the elemental ratio can be optimized.

Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Bagaev, T. A.; Andreev, A. Yu.; Telegin, K. Yu.; Lobintsov, A. V.; Davydova, E. I.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Ivanova, E. B.; Simakov, V. A.

2017-05-01

The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Hybrid Molecule-Nanocrystal Photon Upconversion Across the Visible and Near-Infrared

DTIC Science & Technology

2015-07-10

applications in solar energy, biological imaging , and data storage. In this Letter, CdSe and PbSe semiconductor nanocrystals are combined with molecular...Goldschmidt, J. C. Absolute Upconversion Quantum Yield of β-NaYF4 Doped with Er3+ and External Quantum Efficiency of Upconverter Solar Cell Devices...C. Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell . Science 2011, 334, 1530−1533. (37) Choi, J.-H

Multipulse addressing of a Raman quantum memory: configurable beam splitting and efficient readout.

PubMed

Reim, K F; Nunn, J; Jin, X-M; Michelberger, P S; Champion, T F M; England, D G; Lee, K C; Kolthammer, W S; Langford, N K; Walmsley, I A

2012-06-29

Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand, the key element of all PQIP architectures is the beam splitter, which allows us to coherently couple optical modes. Here, we show how to combine these crucial functionalities by addressing a Raman quantum memory with multiple control pulses. The result is a coherent optical storage device with an extremely large time bandwidth product, that functions as an array of dynamically configurable beam splitters, and that can be read out with arbitrarily high efficiency. Networks of such devices would allow fully scalable PQIP, with applications in quantum computation, long distance quantum communications and quantum metrology.

Nd/sup 3 +/ fluorescence quantum-efficiency measurements with photoacoustics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosencwaig, A.; Hildum, E.A.

1981-04-01

We have investigated the use of photoacoustic techniques for obtaining absolute values of fluorescence quantum efficiencies in lightly doped Nd/sup 3 +/ laser materials. We have found that surface absorptions play an important role in gas-microphone measurements, and that thermal profiles are important in piezoelectric measurements. We have obtained fluorescence quantum efficiencies for Nd/sup 3 +/ in yttrium aluminum garnet, and in silicate and borate glasses that are in good agreement with lifetime measurements and Judd-Ofelt calculations.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

How to squeeze high quantum efficiency and high time resolution out of a SPAD

NASA Technical Reports Server (NTRS)

Lacaita, A.; Zappa, F.; Cova, Sergio; Ripamonti, Giancarlo; Spinelli, A.

1993-01-01

We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.

Tandem luminescent solar concentrators based on engineered quantum dots

NASA Astrophysics Data System (ADS)

Wu, Kaifeng; Li, Hongbo; Klimov, Victor I.

2018-02-01

Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm2) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. The efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm2.

Spectral Mismatch Corrections Video Text Version | Photovoltaic Research |

Science.gov Websites

reference cell with the spectral or spot similar to a test cell will make it easier to account for the goes into the numerator of M. Second, we measure the short circuit current of the test cell under the measure the EQE of the test cell and multiply the AM 1.5G solar spectrum to calculate its short circuit

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

NASA Astrophysics Data System (ADS)

Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla

2018-02-01

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

A non-genetic approach to labelling acute myeloid leukemia and bone marrow cells with quantum dots.

PubMed

Zheng, Yanwen; Tan, Dongming; Chen, Zheng; Hu, Chenxi; Mao, Zhengwei J; Singleton, Timothy P; Zeng, Yan; Shao, Xuejun; Yin, Bin

2014-06-01

The difficulty in manipulation of leukemia cells has long hindered the dissection of leukemia pathogenesis. We have introduced a non-genetic approach of marking blood cells, using quantum dots. We compared quantum dots complexed with different vehicles, including a peptide Tat, cationic polymer Turbofect and liposome. Quantum dots-Tat showed the highest efficiency of marking hematopoietic cells among the three vehicles. Quantum dots-Tat could also label a panel of leukemia cell lines at varied efficiencies. More uniform intracellular distributions of quantum dots in mouse bone marrow and leukemia cells were obtained with quantum dots-Tat, compared with the granule-like formation obtained with quantum dots-liposome. Our results suggest that quantum dots have provided a photostable and non-genetic approach that labels normal and malignant hematopoietic cells, in a cell type-, vehicle-, and quantum dot concentration-dependent manner. We expect for potential applications of quantum dots as an easy and fast marking tool assisting investigations of various types of blood cells in the future.

Quantum Correlations in Nonlocal Boson Sampling.

PubMed

Shahandeh, Farid; Lund, Austin P; Ralph, Timothy C

2017-09-22

Determination of the quantum nature of correlations between two spatially separated systems plays a crucial role in quantum information science. Of particular interest is the questions of if and how these correlations enable quantum information protocols to be more powerful. Here, we report on a distributed quantum computation protocol in which the input and output quantum states are considered to be classically correlated in quantum informatics. Nevertheless, we show that the correlations between the outcomes of the measurements on the output state cannot be efficiently simulated using classical algorithms. Crucially, at the same time, local measurement outcomes can be efficiently simulated on classical computers. We show that the only known classicality criterion violated by the input and output states in our protocol is the one used in quantum optics, namely, phase-space nonclassicality. As a result, we argue that the global phase-space nonclassicality inherent within the output state of our protocol represents true quantum correlations.

Efficient Measurement of Multiparticle Entanglement with Embedding Quantum Simulator.

PubMed

Chen, Ming-Cheng; Wu, Dian; Su, Zu-En; Cai, Xin-Dong; Wang, Xi-Lin; Yang, Tao; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2016-02-19

The quantum measurement of entanglement is a demanding task in the field of quantum information. Here, we report the direct and scalable measurement of multiparticle entanglement with embedding photonic quantum simulators. In this embedding framework [R. Di Candia et al. Phys. Rev. Lett. 111, 240502 (2013)], the N-qubit entanglement, which does not associate with a physical observable directly, can be efficiently measured with only two (for even N) and six (for odd N) local measurement settings. Our experiment uses multiphoton quantum simulators to mimic dynamical concurrence and three-tangle entangled systems and to track their entanglement evolutions.

Optimal architectures for long distance quantum communication.

PubMed

Muralidharan, Sreraman; Li, Linshu; Kim, Jungsang; Lütkenhaus, Norbert; Lukin, Mikhail D; Jiang, Liang

2016-02-15

Despite the tremendous progress of quantum cryptography, efficient quantum communication over long distances (≥ 1000 km) remains an outstanding challenge due to fiber attenuation and operation errors accumulated over the entire communication distance. Quantum repeaters (QRs), as a promising approach, can overcome both photon loss and operation errors, and hence significantly speedup the communication rate. Depending on the methods used to correct loss and operation errors, all the proposed QR schemes can be classified into three categories (generations). Here we present the first systematic comparison of three generations of quantum repeaters by evaluating the cost of both temporal and physical resources, and identify the optimized quantum repeater architecture for a given set of experimental parameters for use in quantum key distribution. Our work provides a roadmap for the experimental realizations of highly efficient quantum networks over transcontinental distances.

Optimal architectures for long distance quantum communication

PubMed Central

Muralidharan, Sreraman; Li, Linshu; Kim, Jungsang; Lütkenhaus, Norbert; Lukin, Mikhail D.; Jiang, Liang

2016-01-01

Despite the tremendous progress of quantum cryptography, efficient quantum communication over long distances (≥1000 km) remains an outstanding challenge due to fiber attenuation and operation errors accumulated over the entire communication distance. Quantum repeaters (QRs), as a promising approach, can overcome both photon loss and operation errors, and hence significantly speedup the communication rate. Depending on the methods used to correct loss and operation errors, all the proposed QR schemes can be classified into three categories (generations). Here we present the first systematic comparison of three generations of quantum repeaters by evaluating the cost of both temporal and physical resources, and identify the optimized quantum repeater architecture for a given set of experimental parameters for use in quantum key distribution. Our work provides a roadmap for the experimental realizations of highly efficient quantum networks over transcontinental distances. PMID:26876670

Optimal architectures for long distance quantum communication

NASA Astrophysics Data System (ADS)

Muralidharan, Sreraman; Li, Linshu; Kim, Jungsang; Lütkenhaus, Norbert; Lukin, Mikhail D.; Jiang, Liang

2016-02-01

Despite the tremendous progress of quantum cryptography, efficient quantum communication over long distances (≥1000 km) remains an outstanding challenge due to fiber attenuation and operation errors accumulated over the entire communication distance. Quantum repeaters (QRs), as a promising approach, can overcome both photon loss and operation errors, and hence significantly speedup the communication rate. Depending on the methods used to correct loss and operation errors, all the proposed QR schemes can be classified into three categories (generations). Here we present the first systematic comparison of three generations of quantum repeaters by evaluating the cost of both temporal and physical resources, and identify the optimized quantum repeater architecture for a given set of experimental parameters for use in quantum key distribution. Our work provides a roadmap for the experimental realizations of highly efficient quantum networks over transcontinental distances.

Cavity-based quantum networks with single atoms and optical photons

NASA Astrophysics Data System (ADS)

Reiserer, Andreas; Rempe, Gerhard

2015-10-01

Distributed quantum networks will allow users to perform tasks and to interact in ways which are not possible with present-day technology. Their implementation is a key challenge for quantum science and requires the development of stationary quantum nodes that can send and receive as well as store and process quantum information locally. The nodes are connected by quantum channels for flying information carriers, i.e., photons. These channels serve both to directly exchange quantum information between nodes and to distribute entanglement over the whole network. In order to scale such networks to many particles and long distances, an efficient interface between the nodes and the channels is required. This article describes the cavity-based approach to this goal, with an emphasis on experimental systems in which single atoms are trapped in and coupled to optical resonators. Besides being conceptually appealing, this approach is promising for quantum networks on larger scales, as it gives access to long qubit coherence times and high light-matter coupling efficiencies. Thus, it allows one to generate entangled photons on the push of a button, to reversibly map the quantum state of a photon onto an atom, to transfer and teleport quantum states between remote atoms, to entangle distant atoms, to detect optical photons nondestructively, to perform entangling quantum gates between an atom and one or several photons, and even provides a route toward efficient heralded quantum memories for future repeaters. The presented general protocols and the identification of key parameters are applicable to other experimental systems.

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Efficient quantum circuits for one-way quantum computing.

PubMed

Tanamoto, Tetsufumi; Liu, Yu-Xi; Hu, Xuedong; Nori, Franco

2009-03-13

While Ising-type interactions are ideal for implementing controlled phase flip gates in one-way quantum computing, natural interactions between solid-state qubits are most often described by either the XY or the Heisenberg models. We show an efficient way of generating cluster states directly using either the imaginary SWAP (iSWAP) gate for the XY model, or the sqrt[SWAP] gate for the Heisenberg model. Our approach thus makes one-way quantum computing more feasible for solid-state devices.

High Performance Organic Materials and Devices

DTIC Science & Technology

2006-03-31

on this material exhibited external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd/A. 15. SUBJECT TERMS 16...International de L’Eclairage coordinate at (0.164, 0.188). The external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd...more than 90% absorption in active layer, and highly balanced carrier transport. 4 5. High efficient blue- electroluminescence device shows maximum

Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

PubMed

Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

2014-02-01

In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found.

Low quantum defect laser performance

NASA Astrophysics Data System (ADS)

Bowman, Steven R.

2017-01-01

Low quantum defect lasers are possible using near-resonant optical pumping. This paper examines the laser material performance as the quantum defect of the laser is reduced. A steady-state model is developed, which incorporates the relevant physical processes in these materials and predicts extraction efficiency and waste heat generation. As the laser quantum defect is reduced below a few percent, the impact of fluorescence cooling must be included in the analysis. The special case of a net zero quantum defect laser is examined in detail. This condition, referred to as the radiation balance laser (RBL), is shown to provide two orders of magnitude lower heat generation at the cost of roughly 10% loss in extraction efficiency. Numerical examples are presented with the host materials Yb:YAG and Yb:Silica. The general conditions, which yield optimal laser efficiency, are derived and explored.

Efficient multiparty quantum-secret-sharing schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao Li; Deng Fuguo; Key Laboratory for Quantum Information and Measurements, MOE, Beijing 100084

In this work, we generalize the quantum-secret-sharing scheme of Hillery, Buzek, and Berthiaume [Phys. Rev. A 59, 1829 (1999)] into arbitrary multiparties. Explicit expressions for the shared secret bit is given. It is shown that in the Hillery-Buzek-Berthiaume quantum-secret-sharing scheme the secret information is shared in the parity of binary strings formed by the measured outcomes of the participants. In addition, we have increased the efficiency of the quantum-secret-sharing scheme by generalizing two techniques from quantum key distribution. The favored-measuring-basis quantum-secret-sharing scheme is developed from the Lo-Chau-Ardehali technique [H. K. Lo, H. F. Chau, and M. Ardehali, e-print quant-ph/0011056] wheremore » all the participants choose their measuring-basis asymmetrically, and the measuring-basis-encrypted quantum-secret-sharing scheme is developed from the Hwang-Koh-Han technique [W. Y. Hwang, I. G. Koh, and Y. D. Han, Phys. Lett. A 244, 489 (1998)] where all participants choose their measuring basis according to a control key. Both schemes are asymptotically 100% in efficiency, hence nearly all the Greenberger-Horne-Zeilinger states in a quantum-secret-sharing process are used to generate shared secret information.« less

Extreme Quantum Memory Advantage for Rare-Event Sampling

NASA Astrophysics Data System (ADS)

Aghamohammadi, Cina; Loomis, Samuel P.; Mahoney, John R.; Crutchfield, James P.

2018-02-01

We introduce a quantum algorithm for memory-efficient biased sampling of rare events generated by classical memoryful stochastic processes. Two efficiency metrics are used to compare quantum and classical resources for rare-event sampling. For a fixed stochastic process, the first is the classical-to-quantum ratio of required memory. We show for two example processes that there exists an infinite number of rare-event classes for which the memory ratio for sampling is larger than r , for any large real number r . Then, for a sequence of processes each labeled by an integer size N , we compare how the classical and quantum required memories scale with N . In this setting, since both memories can diverge as N →∞ , the efficiency metric tracks how fast they diverge. An extreme quantum memory advantage exists when the classical memory diverges in the limit N →∞ , but the quantum memory has a finite bound. We then show that finite-state Markov processes and spin chains exhibit memory advantage for sampling of almost all of their rare-event classes.

Matroids and quantum-secret-sharing schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarvepalli, Pradeep; Raussendorf, Robert

A secret-sharing scheme is a cryptographic protocol to distribute a secret state in an encoded form among a group of players such that only authorized subsets of the players can reconstruct the secret. Classically, efficient secret-sharing schemes have been shown to be induced by matroids. Furthermore, access structures of such schemes can be characterized by an excluded minor relation. No such relations are known for quantum secret-sharing schemes. In this paper we take the first steps toward a matroidal characterization of quantum-secret-sharing schemes. In addition to providing a new perspective on quantum-secret-sharing schemes, this characterization has important benefits. While previousmore » work has shown how to construct quantum-secret-sharing schemes for general access structures, these schemes are not claimed to be efficient. In this context the present results prove to be useful; they enable us to construct efficient quantum-secret-sharing schemes for many general access structures. More precisely, we show that an identically self-dual matroid that is representable over a finite field induces a pure-state quantum-secret-sharing scheme with information rate 1.« less

Adaptive recurrence quantum entanglement distillation for two-Kraus-operator channels

NASA Astrophysics Data System (ADS)

Ruan, Liangzhong; Dai, Wenhan; Win, Moe Z.

2018-05-01

Quantum entanglement serves as a valuable resource for many important quantum operations. A pair of entangled qubits can be shared between two agents by first preparing a maximally entangled qubit pair at one agent, and then sending one of the qubits to the other agent through a quantum channel. In this process, the deterioration of entanglement is inevitable since the noise inherent in the channel contaminates the qubit. To address this challenge, various quantum entanglement distillation (QED) algorithms have been developed. Among them, recurrence algorithms have advantages in terms of implementability and robustness. However, the efficiency of recurrence QED algorithms has not been investigated thoroughly in the literature. This paper puts forth two recurrence QED algorithms that adapt to the quantum channel to tackle the efficiency issue. The proposed algorithms have guaranteed convergence for quantum channels with two Kraus operators, which include phase-damping and amplitude-damping channels. Analytical results show that the convergence speed of these algorithms is improved from linear to quadratic and one of the algorithms achieves the optimal speed. Numerical results confirm that the proposed algorithms significantly improve the efficiency of QED.

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Huang, H.

2015-11-09

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carriermore » populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.« less

Error regions in quantum state tomography: computational complexity caused by geometry of quantum states

NASA Astrophysics Data System (ADS)

Suess, Daniel; Rudnicki, Łukasz; maciel, Thiago O.; Gross, David

2017-09-01

The outcomes of quantum mechanical measurements are inherently random. It is therefore necessary to develop stringent methods for quantifying the degree of statistical uncertainty about the results of quantum experiments. For the particularly relevant task of quantum state tomography, it has been shown that a significant reduction in uncertainty can be achieved by taking the positivity of quantum states into account. However—the large number of partial results and heuristics notwithstanding—no efficient general algorithm is known that produces an optimal uncertainty region from experimental data, while making use of the prior constraint of positivity. Here, we provide a precise formulation of this problem and show that the general case is NP-hard. Our result leaves room for the existence of efficient approximate solutions, and therefore does not in itself imply that the practical task of quantum uncertainty quantification is intractable. However, it does show that there exists a non-trivial trade-off between optimality and computational efficiency for error regions. We prove two versions of the result: one for frequentist and one for Bayesian statistics.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

Influence of quantum dot's quantum yield to chemiluminescent resonance energy transfer.

PubMed

Wang, Hai-Qiao; Li, Yong-Qiang; Wang, Jian-Hao; Xu, Qiao; Li, Xiu-Qing; Zhao, Yuan-Di

2008-03-03

The resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and quantum dots (QDs, emission at 593 nm) acceptors (CRET) was investigated. The resonance energy transfer efficiencies were compared while the oil soluble QDs, water soluble QDs (modified with thioglycolate) and QD-HRP conjugates were used as acceptor. The fluorescence of QD can be observed in the three cases, indicating that the CRET occurs while QD acceptor in different status was used. The highest CRET efficiency (10.7%) was obtained in the case of oil soluble QDs, and the lowest CRET efficiency (2.7%) was observed in the QD-HRP conjugates case. This result is coincident with the quantum yields of the acceptors (18.3% and 0.4%). The same result was observed in another similar set of experiment, in which the amphiphilic polymer modified QDs (emission at 675 nm) were used. It suggests that the quantum yield of the QD in different status is the crucial factor to the CRET efficiency. Furthermore, the multiplexed CRET between luminol donor and three different sizes QD acceptors was observed simultaneously. This work will offer useful support for improving the CRET studies based on quantum dots.

Deterministic generation of remote entanglement with active quantum feedback

DOE PAGES

Martin, Leigh; Motzoi, Felix; Li, Hanhan; ...

2015-12-10

We develop and study protocols for deterministic remote entanglement generation using quantum feedback, without relying on an entangling Hamiltonian. In order to formulate the most effective experimentally feasible protocol, we introduce the notion of average-sense locally optimal feedback protocols, which do not require real-time quantum state estimation, a difficult component of real-time quantum feedback control. We use this notion of optimality to construct two protocols that can deterministically create maximal entanglement: a semiclassical feedback protocol for low-efficiency measurements and a quantum feedback protocol for high-efficiency measurements. The latter reduces to direct feedback in the continuous-time limit, whose dynamics can bemore » modeled by a Wiseman-Milburn feedback master equation, which yields an analytic solution in the limit of unit measurement efficiency. Our formalism can smoothly interpolate between continuous-time and discrete-time descriptions of feedback dynamics and we exploit this feature to derive a superior hybrid protocol for arbitrary nonunit measurement efficiency that switches between quantum and semiclassical protocols. Lastly, we show using simulations incorporating experimental imperfections that deterministic entanglement of remote superconducting qubits may be achieved with current technology using the continuous-time feedback protocol alone.« less

Loading a single photon into an optical cavity

NASA Astrophysics Data System (ADS)

Du, Shengwang; Liu, Chang; Sun, Yuan; Zhao, Luwei; Zhang, Shanchao; Loy, M. M. T.

2015-05-01

Confining and manipulating single photons inside a reflective optical cavity is an essential task of cavity quantum electrodynamics (CQED) for probing the quantum nature of light quanta. Such systems are also elementary building blocks for many protocols of quantum network, where remote cavity quantum nodes are coupled through flying photons. The connectivity and scalability of such a quantum network strongly depends on the efficiency of loading a single photon into cavity. In this work we demonstrate that a single photon with an optimal temporal waveform can be efficiently loaded into a cavity. Using heralded narrow-band single photons with exponential growth wave packet whose time constant matches the photon lifetime in the cavity, we demonstrate a loading efficiency of more than 87 percent from free space to a single-sided Fabry-Perot cavity. Our result and approach may enable promising applications in realizing large-scale CQED-based quantum networks. The work was supported by the Hong Kong RGC (Project No. 601411).

An Efficient and Secure Arbitrary N-Party Quantum Key Agreement Protocol Using Bell States

NASA Astrophysics Data System (ADS)

Liu, Wen-Jie; Xu, Yong; Yang, Ching-Nung; Gao, Pei-Pei; Yu, Wen-Bin

2018-01-01

Two quantum key agreement protocols using Bell states and Bell measurement were recently proposed by Shukla et al. (Quantum Inf. Process. 13(11), 2391-2405, 2014). However, Zhu et al. pointed out that there are some security flaws and proposed an improved version (Quantum Inf. Process. 14(11), 4245-4254, 2015). In this study, we will show Zhu et al.'s improvement still exists some security problems, and its efficiency is not high enough. For solving these problems, we utilize four Pauli operations { I, Z, X, Y} to encode two bits instead of the original two operations { I, X} to encode one bit, and then propose an efficient and secure arbitrary N-party quantum key agreement protocol. In the protocol, the channel checking with decoy single photons is introduced to avoid the eavesdropper's flip attack, and a post-measurement mechanism is used to prevent against the collusion attack. The security analysis shows the present protocol can guarantee the correctness, security, privacy and fairness of quantum key agreement.

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

High heralding-efficiency of near-IR fiber coupled photon pairs for quantum technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixon, P. Ben; Murphy, Ryan; Rosenberg, Danna

We report on the development and use of a high heralding-efficiency, single-mode-fiber coupled telecom-band source of entangled photons for quantum technology applications. The source development efforts consisted of theoretical and experimental efforts and we demonstrated a correlated-mode coupling efficiency of 97% 2%, the highest efficiency yet achieved for this type of system. We then incorporated these beneficial source development techniques in a Sagnac configured telecom-band entangled photon source that generates photon pairs entangled in both time/energy and polarization degrees of freedom. We made use of these highly desirable entangled states to investigate several promising quantum technologies.

Quantum discord and Maxwell's demons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zurek, Wojciech Hubert

2003-01-01

Quantum discord was proposed as an information-theoretic measure of the 'quantumness' of correlations. I show that discord determines the difference between the efficiency of quantum and classical Maxwell's demons - that is, entities that can or cannot measure nonlocal observables or carry out conditional quantum operations - in extracting work from collections of correlated quantum systems.

Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the fabrication of IQB lasers will be presented.

High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light.

PubMed

Lee, Wook-Jae; Senanayake, Pradeep; Farrell, Alan C; Lin, Andrew; Hung, Chung-Hong; Huffaker, Diana L

2016-01-13

InAs1-xSbx nanowires have recently attracted interest for infrared sensing applications due to the small bandgap and high thermal conductivity. However, previous reports on nanowire-based infrared sensors required low operating temperatures in order to mitigate the high dark current and have shown poor sensitivities resulting from reduced light coupling efficiency beyond the diffraction limit. Here, InAsSb nanopillar photodiodes with high quantum efficiency are achieved by partially coating the nanopillar with metal that excites localized surface plasmon resonances, leading to quantum efficiencies of ∼29% at 2390 nm. These high quantum efficiency nanopillar photodiodes, with 180 nm diameters and 1000 nm heights, allow operation at temperatures as high as 220 K and exhibit a detection wavelength up to 3000 nm, well beyond the diffraction limit. The InAsSb nanopillars are grown on low cost GaAs (111)B substrates using an InAs buffer layer, making our device architecture a promising path toward low-cost infrared focal plane arrays with high operating temperature.

Efficiency versus speed in quantum heat engines: Rigorous constraint from Lieb-Robinson bound

NASA Astrophysics Data System (ADS)

Shiraishi, Naoto; Tajima, Hiroyasu

2017-08-01

A long-standing open problem whether a heat engine with finite power achieves the Carnot efficiency is investgated. We rigorously prove a general trade-off inequality on thermodynamic efficiency and time interval of a cyclic process with quantum heat engines. In a first step, employing the Lieb-Robinson bound we establish an inequality on the change in a local observable caused by an operation far from support of the local observable. This inequality provides a rigorous characterization of the following intuitive picture that most of the energy emitted from the engine to the cold bath remains near the engine when the cyclic process is finished. Using this description, we prove an upper bound on efficiency with the aid of quantum information geometry. Our result generally excludes the possibility of a process with finite speed at the Carnot efficiency in quantum heat engines. In particular, the obtained constraint covers engines evolving with non-Markovian dynamics, which almost all previous studies on this topic fail to address.

Efficiency versus speed in quantum heat engines: Rigorous constraint from Lieb-Robinson bound.

PubMed

Shiraishi, Naoto; Tajima, Hiroyasu

2017-08-01

A long-standing open problem whether a heat engine with finite power achieves the Carnot efficiency is investgated. We rigorously prove a general trade-off inequality on thermodynamic efficiency and time interval of a cyclic process with quantum heat engines. In a first step, employing the Lieb-Robinson bound we establish an inequality on the change in a local observable caused by an operation far from support of the local observable. This inequality provides a rigorous characterization of the following intuitive picture that most of the energy emitted from the engine to the cold bath remains near the engine when the cyclic process is finished. Using this description, we prove an upper bound on efficiency with the aid of quantum information geometry. Our result generally excludes the possibility of a process with finite speed at the Carnot efficiency in quantum heat engines. In particular, the obtained constraint covers engines evolving with non-Markovian dynamics, which almost all previous studies on this topic fail to address.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

NASA Astrophysics Data System (ADS)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Maximizing the quantum efficiency of microchannel plate detectors - The collection of photoelectrons from the interchannel web using an electric field

NASA Technical Reports Server (NTRS)

Taylor, R. C.; Hettrick, M. C.; Malina, R. F.

1983-01-01

High quantum efficiency and two-dimensional imaging capabilities make the microchannel plate (MCP) a suitable detector for a sky survey instrument. The Extreme Ultraviolet Explorer satellite, to be launched in 1987, will use MCP detectors. A feature which limits MCP efficiency is related to the walls of individual channels. The walls are of finite thickness and thus form an interchannel web. Under normal circumstances, this web does not contribute to the detector's quantum efficiency. Panitz and Foesch (1976) have found that in the case of a bombardment with ions, electrons were ejected from the electrode material coating the web. By applying a small electric field, the electrons were returned to the MCP surface where they were detected. The present investigation is concerned with the enhancement of quantum efficiencies in the case of extreme UV wavelengths. Attention is given to a model and a computer simulation which quantitatively reproduce the experimental results.

Study on Locally Confined Deposition of Si Nanocrystals in High-Aspect-Ratio Si Nano-Pillar Array for Nano-Electronic and Nano-Photonic Applications

DTIC Science & Technology

2010-02-23

reflection, thus increasing the quantum efficiency by one order of magnitude and improving the light extraction from the nano-roughened device surface by...respectively. At a biased current of 400 A, the highest external quantum efficiency is over 0.2% to obtain the maximum EL power of >1 W. In...processing techniques for improving the internal and external quantum efficiencies of Si MOSLEDs via detuning the size and density of high-aspect-ratio Si

How noise affects quantum detector tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Q., E-mail: wang@physics.leidenuniv.nl; Renema, J. J.; Exter, M. P.van

2015-10-07

We determine the full photon number response of a NbN superconducting nanowire single photon detector via quantum detector tomography, and the results show the separation of linear, effective absorption efficiency from the internal detection efficiencies. In addition, we demonstrate an error budget for the complete quantum characterization of the detector. We find that for short times, the dominant noise source is shot noise, while laser power fluctuations limit the accuracy for longer timescales. The combined standard uncertainty of the internal detection efficiency derived from our measurements is about 2%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steiner, Myles A.; Perl, E. E.; Geisz, J. F.

Here, we demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important that the bandgap be determined from the external quantum efficiency.

Quantum Chemistry on Quantum Computers: A Polynomial-Time Quantum Algorithm for Constructing the Wave Functions of Open-Shell Molecules.

PubMed

Sugisaki, Kenji; Yamamoto, Satoru; Nakazawa, Shigeaki; Toyota, Kazuo; Sato, Kazunobu; Shiomi, Daisuke; Takui, Takeji

2016-08-18

Quantum computers are capable to efficiently perform full configuration interaction (FCI) calculations of atoms and molecules by using the quantum phase estimation (QPE) algorithm. Because the success probability of the QPE depends on the overlap between approximate and exact wave functions, efficient methods to prepare accurate initial guess wave functions enough to have sufficiently large overlap with the exact ones are highly desired. Here, we propose a quantum algorithm to construct the wave function consisting of one configuration state function, which is suitable for the initial guess wave function in QPE-based FCI calculations of open-shell molecules, based on the addition theorem of angular momentum. The proposed quantum algorithm enables us to prepare the wave function consisting of an exponential number of Slater determinants only by a polynomial number of quantum operations.

Quantum Brownian motion model for the stock market

NASA Astrophysics Data System (ADS)

Meng, Xiangyi; Zhang, Jian-Wei; Guo, Hong

2016-06-01

It is believed by the majority today that the efficient market hypothesis is imperfect because of market irrationality. Using the physical concepts and mathematical structures of quantum mechanics, we construct an econophysical framework for the stock market, based on which we analogously map massive numbers of single stocks into a reservoir consisting of many quantum harmonic oscillators and their stock index into a typical quantum open system-a quantum Brownian particle. In particular, the irrationality of stock transactions is quantitatively considered as the Planck constant within Heisenberg's uncertainty relationship of quantum mechanics in an analogous manner. We analyze real stock data of Shanghai Stock Exchange of China and investigate fat-tail phenomena and non-Markovian behaviors of the stock index with the assistance of the quantum Brownian motion model, thereby interpreting and studying the limitations of the classical Brownian motion model for the efficient market hypothesis from a new perspective of quantum open system dynamics.

Mechanical equivalent of quantum heat engines.

PubMed

Arnaud, Jacques; Chusseau, Laurent; Philippe, Fabrice

2008-06-01

Quantum heat engines employ as working agents multilevel systems instead of classical gases. We show that under some conditions quantum heat engines are equivalent to a series of reservoirs at different altitudes containing balls of various weights. A cycle consists of picking up at random a ball from one reservoir and carrying it to the next, thereby performing or absorbing some work. In particular, quantum heat engines, employing two-level atoms as working agents, are modeled by reservoirs containing balls of weight 0 or 1. The mechanical model helps us prove that the maximum efficiency of quantum heat engines is the Carnot efficiency. Heat pumps and negative temperatures are considered.

Holographic assembly of semiconductor CdSe quantum dots in polymer for volume Bragg grating structures with diffraction efficiency near 100%

NASA Astrophysics Data System (ADS)

Liu, Xiangming; Tomita, Yasuo; Oshima, Juro; Chikama, Katsumi; Matsubara, Koutatsu; Nakashima, Takuya; Kawai, Tsuyoshi

2009-12-01

We report on the fabrication of centimeter-size transmission Bragg gratings in semiconductor CdSe quantum dots dispersed 50 μm thick photopolymer films. This was done by holographic assembly of CdSe quantum dots in a photopolymerizable monomer blend. Periodic patterning of CdSe quantum dots in polymer was confirmed by a fluorescence microscope and confocal Raman imaging. The diffraction efficiency from the grating of 1 μm spacing was near 100% in the green with 0.34 vol % CdSe quantum dots, giving the refractive index modulation as large as 5.1×10-3.

Realizing Rec. 2020 color gamut with quantum dot displays.

PubMed

Zhu, Ruidong; Luo, Zhenyue; Chen, Haiwei; Dong, Yajie; Wu, Shin-Tson

2015-09-07

We analyze how to realize Rec. 2020 wide color gamut with quantum dots. For photoluminescence, our simulation indicates that we are able to achieve over 97% of the Rec. 2020 standard with quantum dots by optimizing the emission spectra and redesigning the color filters. For electroluminescence, by optimizing the emission spectra of quantum dots is adequate to render over 97% of the Rec. 2020 standard. We also analyze the efficiency and angular performance of these devices, and then compare results with LCDs using green and red phosphors-based LED backlight. Our results indicate that quantum dot display is an outstanding candidate for achieving wide color gamut and high optical efficiency.

Two-party quantum key agreement protocols under collective noise channel

NASA Astrophysics Data System (ADS)

Gao, Hao; Chen, Xiao-Guang; Qian, Song-Rong

2018-06-01

Recently, quantum communication has become a very popular research field. The quantum key agreement (QKA) plays an important role in the field of quantum communication, based on its unconditional security in terms of theory. Among all kinds of QKA protocols, QKA protocols resisting collective noise are widely being studied. In this paper, we propose improved two-party QKA protocols resisting collective noise and present a feasible plan for information reconciliation. Our protocols' qubit efficiency has achieved 26.67%, which is the best among all the two-party QKA protocols against collective noise, thus showing that our protocol can improve the transmission efficiency of quantum key agreement.

Bit-level quantum color image encryption scheme with quantum cross-exchange operation and hyper-chaotic system

NASA Astrophysics Data System (ADS)

Zhou, Nanrun; Chen, Weiwei; Yan, Xinyu; Wang, Yunqian

2018-06-01

In order to obtain higher encryption efficiency, a bit-level quantum color image encryption scheme by exploiting quantum cross-exchange operation and a 5D hyper-chaotic system is designed. Additionally, to enhance the scrambling effect, the quantum channel swapping operation is employed to swap the gray values of corresponding pixels. The proposed color image encryption algorithm has larger key space and higher security since the 5D hyper-chaotic system has more complex dynamic behavior, better randomness and unpredictability than those based on low-dimensional hyper-chaotic systems. Simulations and theoretical analyses demonstrate that the presented bit-level quantum color image encryption scheme outperforms its classical counterparts in efficiency and security.

Optimal approach to quantum communication using dynamic programming.

PubMed

Jiang, Liang; Taylor, Jacob M; Khaneja, Navin; Lukin, Mikhail D

2007-10-30

Reliable preparation of entanglement between distant systems is an outstanding problem in quantum information science and quantum communication. In practice, this has to be accomplished by noisy channels (such as optical fibers) that generally result in exponential attenuation of quantum signals at large distances. A special class of quantum error correction protocols, quantum repeater protocols, can be used to overcome such losses. In this work, we introduce a method for systematically optimizing existing protocols and developing more efficient protocols. Our approach makes use of a dynamic programming-based searching algorithm, the complexity of which scales only polynomially with the communication distance, letting us efficiently determine near-optimal solutions. We find significant improvements in both the speed and the final-state fidelity for preparing long-distance entangled states.

Quasideterministic generation of maximally entangled states of two mesoscopic atomic ensembles by adiabatic quantum feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Lisi, Antonio; De Siena, Silvio; Illuminati, Fabrizio

2005-09-15

We introduce an efficient, quasideterministic scheme to generate maximally entangled states of two atomic ensembles. The scheme is based on quantum nondemolition measurements of total atomic populations and on adiabatic quantum feedback conditioned by the measurements outputs. The high efficiency of the scheme is tested and confirmed numerically for ideal photodetection as well as in the presence of losses.

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng

2011-07-14

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Quantum key distribution using basis encoding of Gaussian-modulated coherent states

NASA Astrophysics Data System (ADS)

Huang, Peng; Huang, Jingzheng; Zhang, Zheshen; Zeng, Guihua

2018-04-01

The continuous-variable quantum key distribution (CVQKD) has been demonstrated to be available in practical secure quantum cryptography. However, its performance is restricted strongly by the channel excess noise and the reconciliation efficiency. In this paper, we present a quantum key distribution (QKD) protocol by encoding the secret keys on the random choices of two measurement bases: the conjugate quadratures X and P . The employed encoding method can dramatically weaken the effects of channel excess noise and reconciliation efficiency on the performance of the QKD protocol. Subsequently, the proposed scheme exhibits the capability to tolerate much higher excess noise and enables us to reach a much longer secure transmission distance even at lower reconciliation efficiency. The proposal can work alternatively to strengthen significantly the performance of the known Gaussian-modulated CVQKD protocol and serve as a multiplier for practical secure quantum cryptography with continuous variables.

Mid-infrared coincidence measurements on twin photons at room temperature

PubMed Central

Mancinelli, M.; Trenti, A.; Piccione, S.; Fontana, G.; Dam, J. S.; Tidemand-Lichtenberg, P.; Pedersen, C.; Pavesi, L.

2017-01-01

Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons. In the visible and near infrared wavelength ranges suitable single-photon detectors do exist. However, low detector quantum efficiency or excessive noise has hampered their mid-infrared (MIR) counterpart. Fast and highly efficient single-photon detectors are thus highly sought after for MIR applications. Here we pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 μm. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules. The up-converted pairs are then detected with low-noise silicon avalanche photodiodes without the need for cryogenic cooling. PMID:28504244

Dual-band quantum well infrared photodetector with metallic structure

NASA Astrophysics Data System (ADS)

Wu, Yang; Liu, Hongmei; Li, Pingzhou

2018-02-01

The quantum efficiency of the dual bands quantum well infrared photodetectors(QWIP) has been widely concerned in recent years. A novel structure for the dual-band quantum well infrared detectors which is based on GaAs/AlGaAs designed in this paper is aimed to improve the absorption efficiency. The structure replaces the conventional grating with a metallic grating based on surface plasmon polaritons(SPPS), and we further insert a metal structure in the periodic quantum well layer. The simulation result shows that the use of the different shapes of the metal holes can remarkably improve the optical coupling efficiency due to the surface plasmon effect. By optimizing parameters of the structure, it can work in the dual infrared bands of 3-5um and 8-12um. Moreover, the absorption rate increased by 20% compared with traditional structure of Dual-band QWIP.

Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage.

PubMed

Kano, Shinya; Fujii, Minoru

2017-03-03

We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

Advances in Flying Qualities

DTIC Science & Technology

1988-05-01

compensatory operations as a dual-mods control -- a form where the control exerted is Initiated and largely accomplished by the precognitive action and then...function. Fig. 3.2 Compensatory control structure for 4-7 precognitive operation occur in a "dual- quality criteria one is referred to mode" control... precognitive action Tesil itatieet rpoas f and then completed with compensatory error- mil quent ei to eure a reduction operations (Ref. 11). certary eqe mso

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J.; Dawson, P.; Hammersley, S.

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar,more » and is a function, specifically, of carrier density.« less

Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

DOE PAGES

Yan, Yong; Crisp, Ryan W.; Gu, Jing; ...

2017-04-03

Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na 2S solution with a peak external quantum efficiency exceeding 100%. QDmore » photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Finally, our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.« less

Quantum-Carnot engine for particle confined to cubic potential

NASA Astrophysics Data System (ADS)

Sutantyo, Trengginas Eka P.; Belfaqih, Idrus H.; Prayitno, T. B.

2015-09-01

Carnot cycle consists of isothermal and adiabatic processes which are reversible. Using analogy in quantum mechanics, these processes can be well explained by replacing variables in classical process with a quantum system. Quantum system which is shown in this paper is a particle that moves under the influence of a cubic potential which is restricted only to the state of the two energy levels. At the end, the efficiency of the system is shown as a function of the width ratio between the initial conditions and the farthest wall while expanding. Furthermore, the system efficiency will be considered 1D and 2D cases. The providing efficiencies are different due to the influence of the degeneration of energy and the degrees of freedom of the system.

Efficiency at maximum power of a laser quantum heat engine enhanced by noise-induced coherence

NASA Astrophysics Data System (ADS)

Dorfman, Konstantin E.; Xu, Dazhi; Cao, Jianshu

2018-04-01

Quantum coherence has been demonstrated in various systems including organic solar cells and solid state devices. In this article, we report the lower and upper bounds for the performance of quantum heat engines determined by the efficiency at maximum power. Our prediction based on the canonical three-level Scovil and Schulz-Dubois maser model strongly depends on the ratio of system-bath couplings for the hot and cold baths and recovers the theoretical bounds established previously for the Carnot engine. Further, introducing a fourth level to the maser model can enhance the maximal power and its efficiency, thus demonstrating the importance of quantum coherence in the thermodynamics and operation of the heat engines beyond the classical limit.

Verifiable fault tolerance in measurement-based quantum computation

NASA Astrophysics Data System (ADS)

Fujii, Keisuke; Hayashi, Masahito

2017-09-01

Quantum systems, in general, cannot be simulated efficiently by a classical computer, and hence are useful for solving certain mathematical problems and simulating quantum many-body systems. This also implies, unfortunately, that verification of the output of the quantum systems is not so trivial, since predicting the output is exponentially hard. As another problem, the quantum system is very delicate for noise and thus needs an error correction. Here, we propose a framework for verification of the output of fault-tolerant quantum computation in a measurement-based model. In contrast to existing analyses on fault tolerance, we do not assume any noise model on the resource state, but an arbitrary resource state is tested by using only single-qubit measurements to verify whether or not the output of measurement-based quantum computation on it is correct. Verifiability is equipped by a constant time repetition of the original measurement-based quantum computation in appropriate measurement bases. Since full characterization of quantum noise is exponentially hard for large-scale quantum computing systems, our framework provides an efficient way to practically verify the experimental quantum error correction.

An Efficient Quantum Somewhat Homomorphic Symmetric Searchable Encryption

NASA Astrophysics Data System (ADS)

Sun, Xiaoqiang; Wang, Ting; Sun, Zhiwei; Wang, Ping; Yu, Jianping; Xie, Weixin

2017-04-01

In 2009, Gentry first introduced an ideal lattices fully homomorphic encryption (FHE) scheme. Later, based on the approximate greatest common divisor problem, learning with errors problem or learning with errors over rings problem, FHE has developed rapidly, along with the low efficiency and computational security. Combined with quantum mechanics, Liang proposed a symmetric quantum somewhat homomorphic encryption (QSHE) scheme based on quantum one-time pad, which is unconditional security. And it was converted to a quantum fully homomorphic encryption scheme, whose evaluation algorithm is based on the secret key. Compared with Liang's QSHE scheme, we propose a more efficient QSHE scheme for classical input states with perfect security, which is used to encrypt the classical message, and the secret key is not required in the evaluation algorithm. Furthermore, an efficient symmetric searchable encryption (SSE) scheme is constructed based on our QSHE scheme. SSE is important in the cloud storage, which allows users to offload search queries to the untrusted cloud. Then the cloud is responsible for returning encrypted files that match search queries (also encrypted), which protects users' privacy.

Broadband Light Collection Efficiency Enhancement of Carbon Nanotube Excitons Coupled to Metallo-Dielectric Antenna Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayan, Kamran; Rabut, Claire; Kong, Xiaoqing

The realization of on-chip quantum networks ideally requires lossless interfaces between photons and solid-state quantum emitters. We propose and demonstrate on-chip arrays of metallo-dielectric antennas (MDA) that are tailored toward efficient and broadband light collection from individual embedded carbon nanotube quantum emitters by trapping air gaps on chip that form cavity modes. Scalable implementation is realized by employing polymer layer dry-transfer techniques that avoid solvent incompatibility issues, as well as a planar design that avoids solid-immersion lenses. Cryogenic measurements demonstrate 7-fold enhanced exciton intensity when compared to emitters located on bare wafers, corresponding to a light collection efficiency (LCE) upmore » to 92% in the best case (average LCE of 69%) into a narrow output cone of +/-15 degrees that enables a priori fiber-to-chip butt coupling. The demonstrated MDA arrays are directly compatible with other quantum systems, particularly 2D materials, toward enabling efficient on-chip quantum light sources or spin-photon interfaces requiring unity light collection, both at cryogenic or room temperature.« less

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

NASA Technical Reports Server (NTRS)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Hierarchy of Efficiently Computable and Faithful Lower Bounds to Quantum Discord

NASA Astrophysics Data System (ADS)

Piani, Marco

2016-08-01

Quantum discord expresses a fundamental nonclassicality of correlations that is more general than entanglement, but that, in its standard definition, is not easily evaluated. We derive a hierarchy of computationally efficient lower bounds to the standard quantum discord. Every nontrivial element of the hierarchy constitutes by itself a valid discordlike measure, based on a fundamental feature of quantum correlations: their lack of shareability. Our approach emphasizes how the difference between entanglement and discord depends on whether shareability is intended as a static property or as a dynamical process.

Secure Multiparty Quantum Computation for Summation and Multiplication.

PubMed

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-21

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

Secure Multiparty Quantum Computation for Summation and Multiplication

PubMed Central

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-01

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

Efficient Variational Quantum Simulator Incorporating Active Error Minimization

NASA Astrophysics Data System (ADS)

Li, Ying; Benjamin, Simon C.

2017-04-01

One of the key applications for quantum computers will be the simulation of other quantum systems that arise in chemistry, materials science, etc., in order to accelerate the process of discovery. It is important to ask the following question: Can this simulation be achieved using near-future quantum processors, of modest size and under imperfect control, or must it await the more distant era of large-scale fault-tolerant quantum computing? Here, we propose a variational method involving closely integrated classical and quantum coprocessors. We presume that all operations in the quantum coprocessor are prone to error. The impact of such errors is minimized by boosting them artificially and then extrapolating to the zero-error case. In comparison to a more conventional optimized Trotterization technique, we find that our protocol is efficient and appears to be fundamentally more robust against error accumulation.

Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.

PubMed

Hoang, Thang B; Akselrod, Gleb M; Mikkelsen, Maiken H

2016-01-13

Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be integrated for directional, room-temperature single photon emission rates exceeding 80 GHz.

Efficient tomography of a quantum many-body system

NASA Astrophysics Data System (ADS)

Lanyon, B. P.; Maier, C.; Holzäpfel, M.; Baumgratz, T.; Hempel, C.; Jurcevic, P.; Dhand, I.; Buyskikh, A. S.; Daley, A. J.; Cramer, M.; Plenio, M. B.; Blatt, R.; Roos, C. F.

2017-12-01

Quantum state tomography is the standard technique for estimating the quantum state of small systems. But its application to larger systems soon becomes impractical as the required resources scale exponentially with the size. Therefore, considerable effort is dedicated to the development of new characterization tools for quantum many-body states. Here we demonstrate matrix product state tomography, which is theoretically proven to allow for the efficient and accurate estimation of a broad class of quantum states. We use this technique to reconstruct the dynamical state of a trapped-ion quantum simulator comprising up to 14 entangled and individually controlled spins: a size far beyond the practical limits of quantum state tomography. Our results reveal the dynamical growth of entanglement and describe its complexity as correlations spread out during a quench: a necessary condition for future demonstrations of better-than-classical performance. Matrix product state tomography should therefore find widespread use in the study of large quantum many-body systems and the benchmarking and verification of quantum simulators and computers.

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

NASA Astrophysics Data System (ADS)

Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

2017-11-01

The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

Detection of Biochemical Pathogens, Laser Stand-off Spectroscopy, Quantum Coherence, and Many Body Quantum Optics

DTIC Science & Technology

2012-02-24

AND SUBTITLE Detection of Biochemical Pathogens, Laser Stand-off Spectroscopy, Quantum Coherence, and Many Body Quantum Optics 6. AUTHORS Marian O...Maximum 200 words) Results of our earlier research in the realm of quantum optics were extended in order to solve the challenging technical problems of...efficient methods of generating UV light via quantum coherence. 14. SUBJECT TERMS Quantum coherence, quantum optics, lasers 15. NUMBER OF PAGES 15

Efficient quantum dialogue without information leakage

NASA Astrophysics Data System (ADS)

Yin, Ai-Han; Tang, Zhi-Hui; Chen, Dong

2015-02-01

A two-step quantum dialogue scheme is put forward with a class of three-qubit W state and quantum dense coding. Each W state can carry three bits of secret information and the measurement result is encrypted without information leakage. Furthermore, we utilize the entangle properties of W state and decoy photon checking technique to realize three-time channel detection, which can improve the efficiency and security of the scheme.

Heralded high-efficiency quantum repeater with atomic ensembles assisted by faithful single-photon transmission

NASA Astrophysics Data System (ADS)

Li, Tao; Deng, Fu-Guo

2015-10-01

Quantum repeater is one of the important building blocks for long distance quantum communication network. The previous quantum repeaters based on atomic ensembles and linear optical elements can only be performed with a maximal success probability of 1/2 during the entanglement creation and entanglement swapping procedures. Meanwhile, the polarization noise during the entanglement distribution process is harmful to the entangled channel created. Here we introduce a general interface between a polarized photon and an atomic ensemble trapped in a single-sided optical cavity, and with which we propose a high-efficiency quantum repeater protocol in which the robust entanglement distribution is accomplished by the stable spatial-temporal entanglement and it can in principle create the deterministic entanglement between neighboring atomic ensembles in a heralded way as a result of cavity quantum electrodynamics. Meanwhile, the simplified parity-check gate makes the entanglement swapping be completed with unity efficiency, other than 1/2 with linear optics. We detail the performance of our protocol with current experimental parameters and show its robustness to the imperfections, i.e., detuning and coupling variation, involved in the reflection process. These good features make it a useful building block in long distance quantum communication.

Heralded high-efficiency quantum repeater with atomic ensembles assisted by faithful single-photon transmission.

PubMed

Li, Tao; Deng, Fu-Guo

2015-10-27

Quantum repeater is one of the important building blocks for long distance quantum communication network. The previous quantum repeaters based on atomic ensembles and linear optical elements can only be performed with a maximal success probability of 1/2 during the entanglement creation and entanglement swapping procedures. Meanwhile, the polarization noise during the entanglement distribution process is harmful to the entangled channel created. Here we introduce a general interface between a polarized photon and an atomic ensemble trapped in a single-sided optical cavity, and with which we propose a high-efficiency quantum repeater protocol in which the robust entanglement distribution is accomplished by the stable spatial-temporal entanglement and it can in principle create the deterministic entanglement between neighboring atomic ensembles in a heralded way as a result of cavity quantum electrodynamics. Meanwhile, the simplified parity-check gate makes the entanglement swapping be completed with unity efficiency, other than 1/2 with linear optics. We detail the performance of our protocol with current experimental parameters and show its robustness to the imperfections, i.e., detuning and coupling variation, involved in the reflection process. These good features make it a useful building block in long distance quantum communication.

Heralded high-efficiency quantum repeater with atomic ensembles assisted by faithful single-photon transmission

PubMed Central

Li, Tao; Deng, Fu-Guo

2015-01-01

Quantum repeater is one of the important building blocks for long distance quantum communication network. The previous quantum repeaters based on atomic ensembles and linear optical elements can only be performed with a maximal success probability of 1/2 during the entanglement creation and entanglement swapping procedures. Meanwhile, the polarization noise during the entanglement distribution process is harmful to the entangled channel created. Here we introduce a general interface between a polarized photon and an atomic ensemble trapped in a single-sided optical cavity, and with which we propose a high-efficiency quantum repeater protocol in which the robust entanglement distribution is accomplished by the stable spatial-temporal entanglement and it can in principle create the deterministic entanglement between neighboring atomic ensembles in a heralded way as a result of cavity quantum electrodynamics. Meanwhile, the simplified parity-check gate makes the entanglement swapping be completed with unity efficiency, other than 1/2 with linear optics. We detail the performance of our protocol with current experimental parameters and show its robustness to the imperfections, i.e., detuning and coupling variation, involved in the reflection process. These good features make it a useful building block in long distance quantum communication. PMID:26502993

Junction-Free Electrospun Ag Fiber Electrodes for Flexible Organic Light-Emitting Diodes.

PubMed

Choi, Junhee; Shim, Yong Sub; Park, Cheol Hwee; Hwang, Ha; Kwack, Jin Ho; Lee, Dong Jun; Park, Young Wook; Ju, Byeong-Kwon

2018-02-01

Fabrication of junction-free Ag fiber electrodes for flexible organic light-emitting diodes (OLEDs) is demonstrated. The junction-free Ag fiber electrodes are fabricated by electrospun polymer fibers used as an etch mask and wet etching of Ag thin film. This process facilitates surface roughness control, which is important in transparent electrodes based on metal wires to prevent electrical instability of the OLEDs. The transmittance and resistance of Ag fiber electrodes can be independently adjusted by controlling spinning time and Ag deposition thickness. The Ag fiber electrode shows a transmittance of 91.8% (at 550 nm) at a sheet resistance of 22.3 Ω □ -1 , leading to the highest OLED efficiency. In addition, Ag fiber electrodes exhibit excellent mechanical durability, as shown by measuring the change in resistance under repeatable mechanical bending and various bending radii. The OLEDs with Ag fiber electrodes on a flexible substrate are successfully fabricated, and the OLEDs show an enhancement of EQE (≈19%) compared to commercial indium tin oxide electrodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental quantum computing without entanglement.

PubMed

Lanyon, B P; Barbieri, M; Almeida, M P; White, A G

2008-11-14

Deterministic quantum computation with one pure qubit (DQC1) is an efficient model of computation that uses highly mixed states. Unlike pure-state models, its power is not derived from the generation of a large amount of entanglement. Instead it has been proposed that other nonclassical correlations are responsible for the computational speedup, and that these can be captured by the quantum discord. In this Letter we implement DQC1 in an all-optical architecture, and experimentally observe the generated correlations. We find no entanglement, but large amounts of quantum discord-except in three cases where an efficient classical simulation is always possible. Our results show that even fully separable, highly mixed, states can contain intrinsically quantum mechanical correlations and that these could offer a valuable resource for quantum information technologies.

Symmetric Blind Information Reconciliation for Quantum Key Distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiktenko, Evgeniy O.; Trushechkin, Anton S.; Lim, Charles Ci Wen

Quantum key distribution (QKD) is a quantum-proof key-exchange scheme which is fast approaching the communication industry. An essential component in QKD is the information reconciliation step, which is used for correcting the quantum-channel noise errors. The recently suggested blind-reconciliation technique, based on low-density parity-check codes, offers remarkable prospectives for efficient information reconciliation without an a priori quantum bit error rate estimation. We suggest an improvement of the blind-information-reconciliation protocol promoting a significant increase in the efficiency of the procedure and reducing its interactivity. Finally, the proposed technique is based on introducing symmetry in operations of parties, and the consideration ofmore » results of unsuccessful belief-propagation decodings.« less

Symmetric Blind Information Reconciliation for Quantum Key Distribution

DOE PAGES

Kiktenko, Evgeniy O.; Trushechkin, Anton S.; Lim, Charles Ci Wen; ...

2017-10-27

Quantum key distribution (QKD) is a quantum-proof key-exchange scheme which is fast approaching the communication industry. An essential component in QKD is the information reconciliation step, which is used for correcting the quantum-channel noise errors. The recently suggested blind-reconciliation technique, based on low-density parity-check codes, offers remarkable prospectives for efficient information reconciliation without an a priori quantum bit error rate estimation. We suggest an improvement of the blind-information-reconciliation protocol promoting a significant increase in the efficiency of the procedure and reducing its interactivity. Finally, the proposed technique is based on introducing symmetry in operations of parties, and the consideration ofmore » results of unsuccessful belief-propagation decodings.« less

Long-distance quantum communication with atomic ensembles and linear optics.

PubMed

Duan, L M; Lukin, M D; Cirac, J I; Zoller, P

2001-11-22

Quantum communication holds promise for absolutely secure transmission of secret messages and the faithful transfer of unknown quantum states. Photonic channels appear to be very attractive for the physical implementation of quantum communication. However, owing to losses and decoherence in the channel, the communication fidelity decreases exponentially with the channel length. Here we describe a scheme that allows the implementation of robust quantum communication over long lossy channels. The scheme involves laser manipulation of atomic ensembles, beam splitters, and single-photon detectors with moderate efficiencies, and is therefore compatible with current experimental technology. We show that the communication efficiency scales polynomially with the channel length, and hence the scheme should be operable over very long distances.

Symmetric Blind Information Reconciliation for Quantum Key Distribution

NASA Astrophysics Data System (ADS)

Kiktenko, E. O.; Trushechkin, A. S.; Lim, C. C. W.; Kurochkin, Y. V.; Fedorov, A. K.

2017-10-01

Quantum key distribution (QKD) is a quantum-proof key-exchange scheme which is fast approaching the communication industry. An essential component in QKD is the information reconciliation step, which is used for correcting the quantum-channel noise errors. The recently suggested blind-reconciliation technique, based on low-density parity-check codes, offers remarkable prospectives for efficient information reconciliation without an a priori quantum bit error rate estimation. We suggest an improvement of the blind-information-reconciliation protocol promoting a significant increase in the efficiency of the procedure and reducing its interactivity. The proposed technique is based on introducing symmetry in operations of parties, and the consideration of results of unsuccessful belief-propagation decodings.

Photodetectors for scintillator proportionality measurement

NASA Astrophysics Data System (ADS)

Moses, William W.; Choong, Woon-Seng; Hull, Giulia; Payne, Steve; Cherepy, Nerine; Valentine, John D.

2009-10-01

We evaluate photodetectors for use in a Compton Coincidence apparatus designed for measuring scintillator proportionality. There are many requirements placed on the photodetector in these systems, including active area, linearity, and the ability to accurately measure low light levels (which implies high quantum efficiency and high signal-to-noise ratio). Through a combination of measurement and Monte Carlo simulation, we evaluate a number of potential photodetectors, especially photomultiplier tubes and hybrid photodetectors. Of these, we find that the most promising devices available are photomultiplier tubes with high (˜50%) quantum efficiency, although hybrid photodetectors with high quantum efficiency would be preferable.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Nano-patterned superconducting surface for high quantum efficiency cathode

DOEpatents

Hannon, Fay; Musumeci, Pietro

2017-03-07

A method for providing a superconducting surface on a laser-driven niobium cathode in order to increase the effective quantum efficiency. The enhanced surface increases the effective quantum efficiency by improving the laser absorption of the surface and enhancing the local electric field. The surface preparation method makes feasible the construction of superconducting radio frequency injectors with niobium as the photocathode. An array of nano-structures are provided on a flat surface of niobium. The nano-structures are dimensionally tailored to interact with a laser of specific wavelength to thereby increase the electron yield of the surface.

Tailoring the Energy Landscape in Quasi-2D Halide Perovskites Enables Efficient Green-Light Emission.

PubMed

Quan, Li Na; Zhao, Yongbiao; García de Arquer, F Pelayo; Sabatini, Randy; Walters, Grant; Voznyy, Oleksandr; Comin, Riccardo; Li, Yiying; Fan, James Z; Tan, Hairen; Pan, Jun; Yuan, Mingjian; Bakr, Osman M; Lu, Zhenghong; Kim, Dong Ha; Sargent, Edward H

2017-06-14

Organo-metal halide perovskites are a promising platform for optoelectronic applications in view of their excellent charge-transport and bandgap tunability. However, their low photoluminescence quantum efficiencies, especially in low-excitation regimes, limit their efficiency for light emission. Consequently, perovskite light-emitting devices are operated under high injection, a regime under which the materials have so far been unstable. Here we show that, by concentrating photoexcited states into a small subpopulation of radiative domains, one can achieve a high quantum yield, even at low excitation intensities. We tailor the composition of quasi-2D perovskites to direct the energy transfer into the lowest-bandgap minority phase and to do so faster than it is lost to nonradiative centers. The new material exhibits 60% photoluminescence quantum yield at excitation intensities as low as 1.8 mW/cm 2 , yielding a ratio of quantum yield to excitation intensity of 0.3 cm 2 /mW; this represents a decrease of 2 orders of magnitude in the excitation power required to reach high efficiency compared with the best prior reports. Using this strategy, we report light-emitting diodes with external quantum efficiencies of 7.4% and a high luminescence of 8400 cd/m 2 .

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence

PubMed Central

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K. L.; Sum, Tze Chien; Huang, Wei

2017-01-01

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 1015 cm−3, defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence. PMID:28239146

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence.

PubMed

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K L; Sum, Tze Chien; Huang, Wei

2017-02-27

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 10 15  cm -3 , defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence.

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

NASA Astrophysics Data System (ADS)

Kaganskiy, Arsenty; Fischbach, Sarah; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

2018-04-01

We report on the realization of scalable single-photon sources (SPSs) based on single site-controlled quantum dots (SCQDs) and deterministically fabricated microlenses. The fabrication process comprises the buried-stressor growth technique complemented with low-temperature in-situ electron-beam lithography for the integration of SCQDs into microlens structures with high yield and high alignment accuracy. The microlens-approach leads to a broadband enhancement of the photon-extraction efficiency of up to (21 ± 2)% and a high suppression of multi-photon events with g (2)(τ = 0) < 0.06 without background subtraction. The demonstrated combination of site-controlled growth of QDs and in-situ electron-beam lithography is relevant for arrays of efficient SPSs which, can be applied in photonic quantum circuits and advanced quantum computation schemes.

Spectral difference Lanczos method for efficient time propagation in quantum control theory

NASA Astrophysics Data System (ADS)

Farnum, John D.; Mazziotti, David A.

2004-04-01

Spectral difference methods represent the real-space Hamiltonian of a quantum system as a banded matrix which possesses the accuracy of the discrete variable representation (DVR) and the efficiency of finite differences. When applied to time-dependent quantum mechanics, spectral differences enhance the efficiency of propagation methods for evolving the Schrödinger equation. We develop a spectral difference Lanczos method which is computationally more economical than the sinc-DVR Lanczos method, the split-operator technique, and even the fast-Fourier-Transform Lanczos method. Application of fast propagation is made to quantum control theory where chirped laser pulses are designed to dissociate both diatomic and polyatomic molecules. The specificity of the chirped laser fields is also tested as a possible method for molecular identification and discrimination.

Quantum and quasiclassical dynamics of the multi-channel H + H2S reaction.

PubMed

Qi, Ji; Lu, Dandan; Song, Hongwei; Li, Jun; Yang, Minghui

2017-03-28

The prototypical multi-channel reaction H + H 2 S → H 2 + SH/H + H 2 S has been investigated using the full-dimensional quantum scattering and quasi-classical trajectory methods to unveil the underlying competition mechanism between different product channels and the mode specificity. This reaction favors the abstraction channel over the exchange channel. For both channels, excitations in the two stretching modes promote the reaction with nearly equal efficiency and are more efficient than the bending mode excitation. However, they are all less efficient than the translational energy. In addition, the experimentally observed non-Arrhenius temperature dependence of the thermal rate constants is reasonably reproduced by the quantum dynamics calculations, confirming that the non-Arrhenius behavior is caused by the pronounced quantum tunneling.

Fast, efficient error reconciliation for quantum cryptography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttler, W.T.; Lamoreaux, S.K.; Torgerson, J.R.

2003-05-01

We describe an error-reconciliation protocol, which we call Winnow, based on the exchange of parity and Hamming's 'syndrome' for N-bit subunits of a large dataset. The Winnow protocol was developed in the context of quantum-key distribution and offers significant advantages and net higher efficiency compared to other widely used protocols within the quantum cryptography community. A detailed mathematical analysis of the Winnow protocol is presented in the context of practical implementations of quantum-key distribution; in particular, the information overhead required for secure implementation is one of the most important criteria in the evaluation of a particular error-reconciliation protocol. The increasemore » in efficiency for the Winnow protocol is largely due to the reduction in authenticated public communication required for its implementation.« less

A variational eigenvalue solver on a photonic quantum processor

PubMed Central

Peruzzo, Alberto; McClean, Jarrod; Shadbolt, Peter; Yung, Man-Hong; Zhou, Xiao-Qi; Love, Peter J.; Aspuru-Guzik, Alán; O’Brien, Jeremy L.

2014-01-01

Quantum computers promise to efficiently solve important problems that are intractable on a conventional computer. For quantum systems, where the physical dimension grows exponentially, finding the eigenvalues of certain operators is one such intractable problem and remains a fundamental challenge. The quantum phase estimation algorithm efficiently finds the eigenvalue of a given eigenvector but requires fully coherent evolution. Here we present an alternative approach that greatly reduces the requirements for coherent evolution and combine this method with a new approach to state preparation based on ansätze and classical optimization. We implement the algorithm by combining a highly reconfigurable photonic quantum processor with a conventional computer. We experimentally demonstrate the feasibility of this approach with an example from quantum chemistry—calculating the ground-state molecular energy for He–H+. The proposed approach drastically reduces the coherence time requirements, enhancing the potential of quantum resources available today and in the near future. PMID:25055053

A space-efficient quantum computer simulator suitable for high-speed FPGA implementation

NASA Astrophysics Data System (ADS)

Frank, Michael P.; Oniciuc, Liviu; Meyer-Baese, Uwe H.; Chiorescu, Irinel

2009-05-01

Conventional vector-based simulators for quantum computers are quite limited in the size of the quantum circuits they can handle, due to the worst-case exponential growth of even sparse representations of the full quantum state vector as a function of the number of quantum operations applied. However, this exponential-space requirement can be avoided by using general space-time tradeoffs long known to complexity theorists, which can be appropriately optimized for this particular problem in a way that also illustrates some interesting reformulations of quantum mechanics. In this paper, we describe the design and empirical space/time complexity measurements of a working software prototype of a quantum computer simulator that avoids excessive space requirements. Due to its space-efficiency, this design is well-suited to embedding in single-chip environments, permitting especially fast execution that avoids access latencies to main memory. We plan to prototype our design on a standard FPGA development board.

Quantum storage of a photonic polarization qubit in a solid.

PubMed

Gündoğan, Mustafa; Ledingham, Patrick M; Almasi, Attaallah; Cristiani, Matteo; de Riedmatten, Hugues

2012-05-11

We report on the quantum storage and retrieval of photonic polarization quantum bits onto and out of a solid state storage device. The qubits are implemented with weak coherent states at the single photon level, and are stored for a predetermined time of 500 ns in a praseodymium doped crystal with a storage and retrieval efficiency of 10%, using the atomic frequency comb scheme. We characterize the storage by using quantum state tomography, and find that the average conditional fidelity of the retrieved qubits exceeds 95% for a mean photon number μ=0.4. This is significantly higher than a classical benchmark, taking into account the poissonian statistics and finite memory efficiency, which proves that our crystal functions as a quantum storage device for polarization qubits. These results extend the storage capabilities of solid state quantum light matter interfaces to polarization encoding, which is widely used in quantum information science.

Efficient 3He/4He separation in a nanoporous graphenylene membrane.

PubMed

Qu, Yuanyuan; Li, Feng; Zhao, Mingwen

2017-08-16

Helium-3 is a precious noble gas, which is essential in many advanced technologies such as cryogenics, isotope labeling and nuclear weapons. The current imbalance of 3 He demand and supply shortage leads to the search for an efficient membrane with high performance for 3 He separation. In this study, based on first-principles calculations, we demonstrated that highly efficient 3 He harvesting can be achieved in a nanoporous graphenylene membrane with industrially-acceptable selectivity and permeance. The quantum tunneling effect leads to 3 He harvesting with high efficiency via kinetic sieving. Both the quantum tunneling effect and zero-point energy (ZPE) determine the 3 He/ 4 He separation via thermally-driven equilibrium sieving, where the ZPE effect dominates efficient 3 He/ 4 He separation between two reservoirs. The quantum effects revealed in this work suggest that the nanoporous graphenylene membrane is promising for efficient 3 He harvesting that can be exploited for industrial applications.

Pure sources and efficient detectors for optical quantum information processing

NASA Astrophysics Data System (ADS)

Zielnicki, Kevin

Over the last sixty years, classical information theory has revolutionized the understanding of the nature of information, and how it can be quantified and manipulated. Quantum information processing extends these lessons to quantum systems, where the properties of intrinsic uncertainty and entanglement fundamentally defy classical explanation. This growing field has many potential applications, including computing, cryptography, communication, and metrology. As inherently mobile quantum particles, photons are likely to play an important role in any mature large-scale quantum information processing system. However, the available methods for producing and detecting complex multi-photon states place practical limits on the feasibility of sophisticated optical quantum information processing experiments. In a typical quantum information protocol, a source first produces an interesting or useful quantum state (or set of states), perhaps involving superposition or entanglement. Then, some manipulations are performed on this state, perhaps involving quantum logic gates which further manipulate or entangle the intial state. Finally, the state must be detected, obtaining some desired measurement result, e.g., for secure communication or computationally efficient factoring. The work presented here concerns the first and last stages of this process as they relate to photons: sources and detectors. Our work on sources is based on the need for optimized non-classical states of light delivered at high rates, particularly of single photons in a pure quantum state. We seek to better understand the properties of spontaneous parameteric downconversion (SPDC) sources of photon pairs, and in doing so, produce such an optimized source. We report an SPDC source which produces pure heralded single photons with little or no spectral filtering, allowing a significant rate enhancement. Our work on detectors is based on the need to reliably measure single-photon states. We have focused on optimizing the detection efficiency of visible light photon counters (VLPCs), a single-photon detection technology that is also capable of resolving photon number states. We report a record-breaking quantum efficiency of 91 +/- 3% observed with our detection system. Both sources and detectors are independently interesting physical systems worthy of study, but together they promise to enable entire new classes and applications of information based on quantum mechanics.

High-quantum efficiency, long-lived luminescing refractory oxides

DOEpatents

Chen, Y.; Gonzalez, R.; Summers, G.P.

A crystal having a high-quantum efficiency and a long period of luminescence is formed of MgO or CaO and possessing a concentration ratio of H/sup -/ ions to F centers in the range of about 0.05 to about 10.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

High-performance hybrid white organic light-emitting devices without interlayer between fluorescent and phosphorescent emissive regions.

PubMed

Sun, Ning; Wang, Qi; Zhao, Yongbiao; Chen, Yonghua; Yang, Dezhi; Zhao, Fangchao; Chen, Jiangshan; Ma, Dongge

2014-03-12

By using mixed hosts with bipolar transport properties for blue emissive layers, a novel phosphorescence/fluorescence hybrid white OLED without using an interlayer between the fluorescent and phosphorescent regions is demonstrated. The peak EQE of the device is 19.0% and remains as high as 17.0% at the practical brightness of 1000 cd m(-2) . © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum versus classical dynamics in the optical centrifuge

NASA Astrophysics Data System (ADS)

Armon, Tsafrir; Friedland, Lazar

2017-09-01

The interplay between classical and quantum-mechanical evolution in the optical centrifuge (OC) is discussed. The analysis is based on the quantum-mechanical formalism starting from either the ground state or a thermal ensemble. Two resonant mechanisms are identified, i.e., the classical autoresonance and the quantum-mechanical ladder climbing, yielding different dynamics and rotational excitation efficiencies. The rotating-wave approximation is used to analyze the two resonant regimes in the associated dimensionless two-parameter space and calculate the OC excitation efficiency. The results show good agreement between numerical simulations and theory and are relevant to existing experimental setups.

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

PubMed

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

Entanglement enhances cooling in microscopic quantum refrigerators.

PubMed

Brunner, Nicolas; Huber, Marcus; Linden, Noah; Popescu, Sandu; Silva, Ralph; Skrzypczyk, Paul

2014-03-01

Small self-contained quantum thermal machines function without external source of work or control but using only incoherent interactions with thermal baths. Here we investigate the role of entanglement in a small self-contained quantum refrigerator. We first show that entanglement is detrimental as far as efficiency is concerned-fridges operating at efficiencies close to the Carnot limit do not feature any entanglement. Moving away from the Carnot regime, we show that entanglement can enhance cooling and energy transport. Hence, a truly quantum refrigerator can outperform a classical one. Furthermore, the amount of entanglement alone quantifies the enhancement in cooling.

Femtosecond Laser--Pumped Source of Entangled Photons for Quantum Cryptography Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, D.; Donaldson, W.; Sobolewski, R.

2007-07-31

We present an experimental setup for generation of entangled-photon pairs via spontaneous parametric down-conversion, based on the femtosecond-pulsed laser. Our entangled-photon source utilizes a 76-MHz-repetition-rate, 100-fs-pulse-width, mode-locked, ultrafast femtosecond laser, which can produce, on average, more photon pairs than a cw laser of an equal pump power. The resulting entangled pairs are counted by a pair of high-quantum-efficiency, single-photon, silicon avalanche photodiodes. Our apparatus is intended as an efficient source/receiver system for the quantum communications and quantum cryptography applications.

Minimized state complexity of quantum-encoded cryptic processes

NASA Astrophysics Data System (ADS)

Riechers, Paul M.; Mahoney, John R.; Aghamohammadi, Cina; Crutchfield, James P.

2016-05-01

The predictive information required for proper trajectory sampling of a stochastic process can be more efficiently transmitted via a quantum channel than a classical one. This recent discovery allows quantum information processing to drastically reduce the memory necessary to simulate complex classical stochastic processes. It also points to a new perspective on the intrinsic complexity that nature must employ in generating the processes we observe. The quantum advantage increases with codeword length: the length of process sequences used in constructing the quantum communication scheme. In analogy with the classical complexity measure, statistical complexity, we use this reduced communication cost as an entropic measure of state complexity in the quantum representation. Previously difficult to compute, the quantum advantage is expressed here in closed form using spectral decomposition. This allows for efficient numerical computation of the quantum-reduced state complexity at all encoding lengths, including infinite. Additionally, it makes clear how finite-codeword reduction in state complexity is controlled by the classical process's cryptic order, and it allows asymptotic analysis of infinite-cryptic-order processes.

Tuning Single Quantum Dot Emission with a Micromirror.

PubMed

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

Thermal Quantum Correlations in Photosynthetic Light-Harvesting Complexes

NASA Astrophysics Data System (ADS)

Mahdian, M.; Kouhestani, H.

2015-08-01

Photosynthesis is one of the ancient biological processes, playing crucial role converting solar energy to cellular usable currency. Environmental factors and external perturbations has forced nature to choose systems with the highest efficiency and performance. Recent theoretical and experimental studies have proved the presence of quantum properties in biological systems. Energy transfer systems like Fenna-Matthews-Olson (FMO) complex shows quantum entanglement between sites of Bacteriophylla molecules in protein environment and presence of decoherence. Complex biological systems implement more truthful mechanisms beside chemical-quantum correlations to assure system's efficiency. In this study we investigate thermal quantum correlations in FMO protein of the photosynthetic apparatus of green sulfur bacteria by quantum discord measure. The results confirmed existence of remarkable quantum correlations of of BChla pigments in room temperature. This results approve involvement of quantum correlation mechanisms for information storage and retention in living organisms that could be useful for further evolutionary studies. Inspired idea of this study is potentially interesting to practice by the same procedure in genetic data transfer mechanisms.

Topics in quantum cryptography, quantum error correction, and channel simulation

NASA Astrophysics Data System (ADS)

Luo, Zhicheng

In this thesis, we mainly investigate four different topics: efficiently implementable codes for quantum key expansion [51], quantum error-correcting codes based on privacy amplification [48], private classical capacity of quantum channels [44], and classical channel simulation with quantum side information [49, 50]. For the first topic, we propose an efficiently implementable quantum key expansion protocol, capable of increasing the size of a pre-shared secret key by a constant factor. Previously, the Shor-Preskill proof [64] of the security of the Bennett-Brassard 1984 (BB84) [6] quantum key distribution protocol relied on the theoretical existence of good classical error-correcting codes with the "dual-containing" property. But the explicit and efficiently decodable construction of such codes is unknown. We show that we can lift the dual-containing constraint by employing the non-dual-containing codes with excellent performance and efficient decoding algorithms. For the second topic, we propose a construction of Calderbank-Shor-Steane (CSS) [19, 68] quantum error-correcting codes, which are originally based on pairs of mutually dual-containing classical codes, by combining a classical code with a two-universal hash function. We show, using the results of Renner and Koenig [57], that the communication rates of such codes approach the hashing bound on tensor powers of Pauli channels in the limit of large block-length. For the third topic, we prove a regularized formula for the secret key assisted capacity region of a quantum channel for transmitting private classical information. This result parallels the work of Devetak on entanglement assisted quantum communication capacity. This formula provides a new family protocol, the private father protocol, under the resource inequality framework that includes the private classical communication without the assisted secret keys as a child protocol. For the fourth topic, we study and solve the problem of classical channel simulation with quantum side information at the receiver. Our main theorem has two important corollaries: rate-distortion theory with quantum side information and common randomness distillation. Simple proofs of achievability of classical multi-terminal source coding problems can be made via a unified approach using the channel simulation theorem as building blocks. The fully quantum generalization of the problem is also conjectured with outer and inner bounds on the achievable rate pairs.

Quantum chemical study of the inhibition of the corrosion of mild steel in H2SO4 by some antibiotics.

PubMed

Eddy, Nnabuk O; Ibok, Udo J; Ebenso, Eno E; El Nemr, Ahmed; El Ashry, El Sayed H

2009-09-01

The inhibition efficiency of some antibiotics against mild steel corrosion was studied using weight loss and quantum chemical techniques. Values of inhibition efficiency obtained from weight loss measurements correlated strongly with theoretical values obtained through semi empirical calculations. High correlation coefficients were also obtained between inhibition efficiency of the antibiotics and some quantum chemical parameters, including frontier orbital (E (HOMO) and E (LUMO)), dipole moment, log P, TNC and LSER parameters (critical volume and dipolar-polarisability factor), which indicated that these parameters affect the inhibition efficiency of the compounds. It was also found that quantitative structure activity relation can be used to adequately predict the inhibition effectiveness of these compounds.

Experimental Realization of High-Efficiency Counterfactual Computation.

PubMed

Kong, Fei; Ju, Chenyong; Huang, Pu; Wang, Pengfei; Kong, Xi; Shi, Fazhan; Jiang, Liang; Du, Jiangfeng

2015-08-21

Counterfactual computation (CFC) exemplifies the fascinating quantum process by which the result of a computation may be learned without actually running the computer. In previous experimental studies, the counterfactual efficiency is limited to below 50%. Here we report an experimental realization of the generalized CFC protocol, in which the counterfactual efficiency can break the 50% limit and even approach unity in principle. The experiment is performed with the spins of a negatively charged nitrogen-vacancy color center in diamond. Taking advantage of the quantum Zeno effect, the computer can remain in the not-running subspace due to the frequent projection by the environment, while the computation result can be revealed by final detection. The counterfactual efficiency up to 85% has been demonstrated in our experiment, which opens the possibility of many exciting applications of CFC, such as high-efficiency quantum integration and imaging.

Experimental Realization of High-Efficiency Counterfactual Computation

NASA Astrophysics Data System (ADS)

Kong, Fei; Ju, Chenyong; Huang, Pu; Wang, Pengfei; Kong, Xi; Shi, Fazhan; Jiang, Liang; Du, Jiangfeng

2015-08-01

Counterfactual computation (CFC) exemplifies the fascinating quantum process by which the result of a computation may be learned without actually running the computer. In previous experimental studies, the counterfactual efficiency is limited to below 50%. Here we report an experimental realization of the generalized CFC protocol, in which the counterfactual efficiency can break the 50% limit and even approach unity in principle. The experiment is performed with the spins of a negatively charged nitrogen-vacancy color center in diamond. Taking advantage of the quantum Zeno effect, the computer can remain in the not-running subspace due to the frequent projection by the environment, while the computation result can be revealed by final detection. The counterfactual efficiency up to 85% has been demonstrated in our experiment, which opens the possibility of many exciting applications of CFC, such as high-efficiency quantum integration and imaging.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

An integrated approach to realizing high-performance liquid-junction quantum dot sensitized solar cells

PubMed Central

McDaniel, Hunter; Fuke, Nobuhiro; Makarov, Nikolay S.; Pietryga, Jeffrey M.; Klimov, Victor I.

2013-01-01

Solution-processed semiconductor quantum dot solar cells offer a path towards both reduced fabrication cost and higher efficiency enabled by novel processes such as hot-electron extraction and carrier multiplication. Here we use a new class of low-cost, low-toxicity CuInSexS2−x quantum dots to demonstrate sensitized solar cells with certified efficiencies exceeding 5%. Among other material and device design improvements studied, use of a methanol-based polysulfide electrolyte results in a particularly dramatic enhancement in photocurrent and reduced series resistance. Despite the high vapour pressure of methanol, the solar cells are stable for months under ambient conditions, which is much longer than any previously reported quantum dot sensitized solar cell. This study demonstrates the large potential of CuInSexS2−x quantum dots as active materials for the realization of low-cost, robust and efficient photovoltaics as well as a platform for investigating various advanced concepts derived from the unique physics of the nanoscale size regime. PMID:24322379

Density-functional theory simulation of large quantum dots

NASA Astrophysics Data System (ADS)

Jiang, Hong; Baranger, Harold U.; Yang, Weitao

2003-10-01

Kohn-Sham spin-density functional theory provides an efficient and accurate model to study electron-electron interaction effects in quantum dots, but its application to large systems is a challenge. Here an efficient method for the simulation of quantum dots using density-function theory is developed; it includes the particle-in-the-box representation of the Kohn-Sham orbitals, an efficient conjugate-gradient method to directly minimize the total energy, a Fourier convolution approach for the calculation of the Hartree potential, and a simplified multigrid technique to accelerate the convergence. We test the methodology in a two-dimensional model system and show that numerical studies of large quantum dots with several hundred electrons become computationally affordable. In the noninteracting limit, the classical dynamics of the system we study can be continuously varied from integrable to fully chaotic. The qualitative difference in the noninteracting classical dynamics has an effect on the quantum properties of the interacting system: integrable classical dynamics leads to higher-spin states and a broader distribution of spacing between Coulomb blockade peaks.

High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

PubMed Central

Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

2013-01-01

Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Can quantum coherent solar cells break detailed balance?

NASA Astrophysics Data System (ADS)

Kirk, Alexander P.

2015-07-01

Carefully engineered coherent quantum states have been proposed as a design attribute that is hypothesized to enable solar photovoltaic cells to break the detailed balance (or radiative) limit of power conversion efficiency by possibly causing radiative recombination to be suppressed. However, in full compliance with the principles of statistical mechanics and the laws of thermodynamics, specially prepared coherent quantum states do not allow a solar photovoltaic cell—a quantum threshold energy conversion device—to exceed the detailed balance limit of power conversion efficiency. At the condition given by steady-state open circuit operation with zero nonradiative recombination, the photon absorption rate (or carrier photogeneration rate) must balance the photon emission rate (or carrier radiative recombination rate) thus ensuring that detailed balance prevails. Quantum state transitions, entropy-generating hot carrier relaxation, and photon absorption and emission rate balancing are employed holistically and self-consistently along with calculations of current density, voltage, and power conversion efficiency to explain why detailed balance may not be violated in solar photovoltaic cells.

Purely organic electroluminescent material realizing 100% conversion from electricity to light

PubMed Central

Kaji, Hironori; Suzuki, Hajime; Fukushima, Tatsuya; Shizu, Katsuyuki; Suzuki, Katsuaki; Kubo, Shosei; Komino, Takeshi; Oiwa, Hajime; Suzuki, Furitsu; Wakamiya, Atsushi; Murata, Yasujiro; Adachi, Chihaya

2015-01-01

Efficient organic light-emitting diodes have been developed using emitters containing rare metals, such as platinum and iridium complexes. However, there is an urgent need to develop emitters composed of more abundant materials. Here we show a thermally activated delayed fluorescence material for organic light-emitting diodes, which realizes both approximately 100% photoluminescence quantum yield and approximately 100% up-conversion of the triplet to singlet excited state. The material contains electron-donating diphenylaminocarbazole and electron-accepting triphenyltriazine moieties. The typical trade-off between effective emission and triplet-to-singlet up-conversion is overcome by fine-tuning the highest occupied molecular orbital and lowest unoccupied molecular orbital distributions. The nearly zero singlet–triplet energy gap, smaller than the thermal energy at room temperature, results in an organic light-emitting diode with external quantum efficiency of 29.6%. An external quantum efficiency of 41.5% is obtained when using an out-coupling sheet. The external quantum efficiency is 30.7% even at a high luminance of 3,000 cd m−2. PMID:26477390

Positive Wigner functions render classical simulation of quantum computation efficient.

PubMed

Mari, A; Eisert, J

2012-12-07

We show that quantum circuits where the initial state and all the following quantum operations can be represented by positive Wigner functions can be classically efficiently simulated. This is true both for continuous-variable as well as discrete variable systems in odd prime dimensions, two cases which will be treated on entirely the same footing. Noting the fact that Clifford and Gaussian operations preserve the positivity of the Wigner function, our result generalizes the Gottesman-Knill theorem. Our algorithm provides a way of sampling from the output distribution of a computation or a simulation, including the efficient sampling from an approximate output distribution in the case of sampling imperfections for initial states, gates, or measurements. In this sense, this work highlights the role of the positive Wigner function as separating classically efficiently simulable systems from those that are potentially universal for quantum computing and simulation, and it emphasizes the role of negativity of the Wigner function as a computational resource.

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

One-dimensional organic lead halide perovskites with efficient bluish white-light emission

NASA Astrophysics Data System (ADS)

Yuan, Zhao; Zhou, Chenkun; Tian, Yu; Shu, Yu; Messier, Joshua; Wang, Jamie C.; van de Burgt, Lambertus J.; Kountouriotis, Konstantinos; Xin, Yan; Holt, Ethan; Schanze, Kirk; Clark, Ronald; Siegrist, Theo; Ma, Biwu

2017-01-01

Organic-inorganic hybrid metal halide perovskites, an emerging class of solution processable photoactive materials, welcome a new member with a one-dimensional structure. Herein we report the synthesis, crystal structure and photophysical properties of one-dimensional organic lead bromide perovskites, C4N2H14PbBr4, in which the edge sharing octahedral lead bromide chains [PbBr4 2-]∞ are surrounded by the organic cations C4N2H14 2+ to form the bulk assembly of core-shell quantum wires. This unique one-dimensional structure enables strong quantum confinement with the formation of self-trapped excited states that give efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately 20% for the bulk single crystals and 12% for the microscale crystals. This work verifies once again that one-dimensional systems are favourable for exciton self-trapping to produce highly efficient below-gap broadband luminescence, and opens up a new route towards superior light emitters based on bulk quantum materials.

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-08-18

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resultedmore » from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.« less

One-dimensional organic lead halide perovskites with efficient bluish white-light emission

PubMed Central

Yuan, Zhao; Zhou, Chenkun; Tian, Yu; Shu, Yu; Messier, Joshua; Wang, Jamie C.; van de Burgt, Lambertus J.; Kountouriotis, Konstantinos; Xin, Yan; Holt, Ethan; Schanze, Kirk; Clark, Ronald; Siegrist, Theo; Ma, Biwu

2017-01-01

Organic-inorganic hybrid metal halide perovskites, an emerging class of solution processable photoactive materials, welcome a new member with a one-dimensional structure. Herein we report the synthesis, crystal structure and photophysical properties of one-dimensional organic lead bromide perovskites, C4N2H14PbBr4, in which the edge sharing octahedral lead bromide chains [PbBr4 2−]∞ are surrounded by the organic cations C4N2H14 2+ to form the bulk assembly of core-shell quantum wires. This unique one-dimensional structure enables strong quantum confinement with the formation of self-trapped excited states that give efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately 20% for the bulk single crystals and 12% for the microscale crystals. This work verifies once again that one-dimensional systems are favourable for exciton self-trapping to produce highly efficient below-gap broadband luminescence, and opens up a new route towards superior light emitters based on bulk quantum materials. PMID:28051092

One-dimensional organic lead halide perovskites with efficient bluish white-light emission.

PubMed

Yuan, Zhao; Zhou, Chenkun; Tian, Yu; Shu, Yu; Messier, Joshua; Wang, Jamie C; van de Burgt, Lambertus J; Kountouriotis, Konstantinos; Xin, Yan; Holt, Ethan; Schanze, Kirk; Clark, Ronald; Siegrist, Theo; Ma, Biwu

2017-01-04

Organic-inorganic hybrid metal halide perovskites, an emerging class of solution processable photoactive materials, welcome a new member with a one-dimensional structure. Herein we report the synthesis, crystal structure and photophysical properties of one-dimensional organic lead bromide perovskites, C 4 N 2 H 14 PbBr 4 , in which the edge sharing octahedral lead bromide chains [PbBr 4   2- ] ∞ are surrounded by the organic cations C 4 N 2 H 14   2+ to form the bulk assembly of core-shell quantum wires. This unique one-dimensional structure enables strong quantum confinement with the formation of self-trapped excited states that give efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately 20% for the bulk single crystals and 12% for the microscale crystals. This work verifies once again that one-dimensional systems are favourable for exciton self-trapping to produce highly efficient below-gap broadband luminescence, and opens up a new route towards superior light emitters based on bulk quantum materials.

Strong plasmonic enhancement of biexciton emission: controlled coupling of a single quantum dot to a gold nanocone antenna

DOE PAGES

Matsuzaki, Korenobu; Vassant, Simon; Liu, Hsuan-Wei; ...

2017-02-14

Multiexcitonic transitions and emission of several photons per excitation comprise a very attractive feature of semiconductor quantum dots for optoelectronics applications. However, these higher-order radiative processes are usually quenched in colloidal quantum dots by Auger and other nonradiative decay channels. To increase the multiexcitonic quantum efficiency, several groups have explored plasmonic enhancement, so far with moderate results. By controlled positioning of individual quantum dots in the near field of gold nanocone antennas, we enhance the radiative decay rates of monoexcitons and biexcitons by 109 and 100 folds at quantum efficiencies of 60 and 70%, respectively, in very good agreement withmore » the outcome of numerical calculations. We discuss the implications of our work for future fundamental and applied research in nano-optics.« less

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

2000-01-01

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Solvent Dependency in the Quantum Efficiency of 4-[(4-Aminophenyl)-(4-imino-1-cyclohexa-2, 5- dienylidene) methyl] Aniline Hydrochloride.

PubMed

Pathrose, Bini; Nampoori, V P N; Radhakrishnan, P; Sahira, H; Mujeeb, A

2015-05-01

In the present work dual beam thermal lens technique is used for studying the solvent dependency on the quantum efficiency of a novel dye used for biomedical applications. The role of solvent in the absolute fluorescence quantum yield of 4-[(4-Aminophenyl)-(4-imino-1-cyclohexa-2, 5- dienylidene) methyl] aniline hydrochloride is studied using thermal lens technique. It is observed that the variation in solvents and its concentration results considerable variations in the fluorescence quantum yield. These variations are due to the non-radiative relaxation of the absorbed energy and because of the different solvent properties. The highest quantum yield of the dye is observed in the polar protic solvent-water.

Generation of Antibunched Light by Excited Molecules in a Microcavity Trap

NASA Technical Reports Server (NTRS)

DeMartini, F.; DiGiuseppe, G.; Marrocco, M.

1996-01-01

The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.

The Experimental Demonstration of High Efficiency Interaction-free Measurement for Quantum Counterfactual-like Communication.

PubMed

Liu, Chao; Liu, Jinhong; Zhang, Junxiang; Zhu, Shiyao

2017-09-07

We present an interaction-free measurement with quantum Zeno effect and a high efficiency η = 74.6% ± 0.15%. As a proof-of-principle demonstration, this measurement can be used to implement a quantum counterfactual-like communication protocol. Instead of a single photon state, we use a coherent light as the input source and show that the output agrees with the proposed quantum counterfactual communication protocol according to Salih et al. Although the counterfactuality is not achieved due to the presence of a few photons in the public channel, we show that the signal light is nearly absent in the public channel, which exhibits a proof-of-principle quantum counterfactual-like property of communication.

Practical system for the generation of pulsed quantum frequency combs.

PubMed

Roztocki, Piotr; Kues, Michael; Reimer, Christian; Wetzel, Benjamin; Sciara, Stefania; Zhang, Yanbing; Cino, Alfonso; Little, Brent E; Chu, Sai T; Moss, David J; Morandotti, Roberto

2017-08-07

The on-chip generation of large and complex optical quantum states will enable low-cost and accessible advances for quantum technologies, such as secure communications and quantum computation. Integrated frequency combs are on-chip light sources with a broad spectrum of evenly-spaced frequency modes, commonly generated by four-wave mixing in optically-excited nonlinear micro-cavities, whose recent use for quantum state generation has provided a solution for scalable and multi-mode quantum light sources. Pulsed quantum frequency combs are of particular interest, since they allow the generation of single-frequency-mode photons, required for scaling state complexity towards, e.g., multi-photon states, and for quantum information applications. However, generation schemes for such pulsed combs have, to date, relied on micro-cavity excitation via lasers external to the sources, being neither versatile nor power-efficient, and impractical for scalable realizations of quantum technologies. Here, we introduce an actively-modulated, nested-cavity configuration that exploits the resonance pass-band characteristic of the micro-cavity to enable a mode-locked and energy-efficient excitation. We demonstrate that the scheme allows the generation of high-purity photons at large coincidence-to-accidental ratios (CAR). Furthermore, by increasing the repetition rate of the excitation field via harmonic mode-locking (i.e. driving the cavity modulation at harmonics of the fundamental repetition rate), we managed to increase the pair production rates (i.e. source efficiency), while maintaining a high CAR and photon purity. Our approach represents a significant step towards the realization of fully on-chip, stable, and versatile sources of pulsed quantum frequency combs, crucial for the development of accessible quantum technologies.

Neural-Network Quantum States, String-Bond States, and Chiral Topological States

NASA Astrophysics Data System (ADS)

Glasser, Ivan; Pancotti, Nicola; August, Moritz; Rodriguez, Ivan D.; Cirac, J. Ignacio

2018-01-01

Neural-network quantum states have recently been introduced as an Ansatz for describing the wave function of quantum many-body systems. We show that there are strong connections between neural-network quantum states in the form of restricted Boltzmann machines and some classes of tensor-network states in arbitrary dimensions. In particular, we demonstrate that short-range restricted Boltzmann machines are entangled plaquette states, while fully connected restricted Boltzmann machines are string-bond states with a nonlocal geometry and low bond dimension. These results shed light on the underlying architecture of restricted Boltzmann machines and their efficiency at representing many-body quantum states. String-bond states also provide a generic way of enhancing the power of neural-network quantum states and a natural generalization to systems with larger local Hilbert space. We compare the advantages and drawbacks of these different classes of states and present a method to combine them together. This allows us to benefit from both the entanglement structure of tensor networks and the efficiency of neural-network quantum states into a single Ansatz capable of targeting the wave function of strongly correlated systems. While it remains a challenge to describe states with chiral topological order using traditional tensor networks, we show that, because of their nonlocal geometry, neural-network quantum states and their string-bond-state extension can describe a lattice fractional quantum Hall state exactly. In addition, we provide numerical evidence that neural-network quantum states can approximate a chiral spin liquid with better accuracy than entangled plaquette states and local string-bond states. Our results demonstrate the efficiency of neural networks to describe complex quantum wave functions and pave the way towards the use of string-bond states as a tool in more traditional machine-learning applications.

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

Coupling of individual quantum emitters to channel plasmons.

PubMed

Bermúdez-Ureña, Esteban; Gonzalez-Ballestero, Carlos; Geiselmann, Michael; Marty, Renaud; Radko, Ilya P; Holmgaard, Tobias; Alaverdyan, Yury; Moreno, Esteban; García-Vidal, Francisco J; Bozhevolnyi, Sergey I; Quidant, Romain

2015-08-07

Efficient light-matter interaction lies at the heart of many emerging technologies that seek on-chip integration of solid-state photonic systems. Plasmonic waveguides, which guide the radiation in the form of strongly confined surface plasmon-polariton modes, represent a promising solution to manipulate single photons in coplanar architectures with unprecedented small footprints. Here we demonstrate coupling of the emission from a single quantum emitter to the channel plasmon polaritons supported by a V-groove plasmonic waveguide. Extensive theoretical simulations enable us to determine the position and orientation of the quantum emitter for optimum coupling. Concomitantly with these predictions, we demonstrate experimentally that 42% of a single nitrogen-vacancy centre emission efficiently couples into the supported modes of the V-groove. This work paves the way towards practical realization of efficient and long distance transfer of energy for integrated solid-state quantum systems.

Organic Light Emitting Devices and Materials Integrated with Active Matrix Backplanes for Flexible Displays

DTIC Science & Technology

2006-11-01

fabricated. Of the molecules, the fac- Ir(dfppy)(dfppz)2 compound had the blue-est emission with the highest quantum efficiency . Phosphorescent...phosphorescent lifetimes, high quantum efficiencies and good stability. The emission color can be readily tuned from blue/green to red by judicious... electroluminescent efficiency as a function of current density plotted against the luminance. Fig. 3 Illustration of an

Silicon Photonics: Challenges and Future

DTIC Science & Technology

2007-01-01

process or phonon assisted. It directly impacts the internal quantum efficiency through the relationship : ηi = (1+ (τrad/τ non-rad ))-1 There are...linear cavity approach, the reported differential quantum efficiency is currently low. The measured characteristic temperature (To), is lower than...rule changes • package design 4.1.2 Inter-chip interconnects There is a requirement on the circuit card to transfer data more efficiently between

Reduction of CO2 to C1 products and fuel

USGS Publications Warehouse

Mill, T.; Ross, D.

2002-01-01

Photochemical semiconductor processes readily reduced CO2 to a broad range of C1 products. However the intrinsic and solar efficiencies for the processes were low. Improved quantum efficiencies could be realized utilizing quantum-sized particles, but at the expense of using less of the visible solar spectrum. Conversely, semiconductors with small bandgaps used more of the visible solar spectrum at the expense of quantum efficiency. Thermal reduction of CO2 with Fe(II) was thermodynamically favored for forming many kinds of organic compounds and occurred readily with olivine and other Fe(II) minerals above 200??C to form higher alkanes and alkenes. No added hydrogen was required.

Environment-assisted Quantum Critical Effect for Excitation Energy Transfer in a LH2-type Trimer

NASA Astrophysics Data System (ADS)

Xu, Lan; Xu, Bo

2015-10-01

In this article, we are investigating excitation energy transfer (EET) in a basic unit cell of light-harvesting complex II (LH2), named a LH2-type trimer. Calculation of energy transfer efficiency (ETE) in the framework of non-Markovian environment is also implemented. With these achievements, we theoretically predict the environment-assisted quantum critical effect, where ETE exhibits a sudden change at the critical point of quantum phase transition (QPT) for the LH2-type trimer. It is found that highly efficient EET with nearly unit efficiency may occur in the vicinity of the critical point of QPT.

High-efficiency reconciliation for continuous variable quantum key distribution

NASA Astrophysics Data System (ADS)

Bai, Zengliang; Yang, Shenshen; Li, Yongmin

2017-04-01

Quantum key distribution (QKD) is the most mature application of quantum information technology. Information reconciliation is a crucial step in QKD and significantly affects the final secret key rates shared between two legitimate parties. We analyze and compare various construction methods of low-density parity-check (LDPC) codes and design high-performance irregular LDPC codes with a block length of 106. Starting from these good codes and exploiting the slice reconciliation technique based on multilevel coding and multistage decoding, we realize high-efficiency Gaussian key reconciliation with efficiency higher than 95% for signal-to-noise ratios above 1. Our demonstrated method can be readily applied in continuous variable QKD.

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

NASA Technical Reports Server (NTRS)

Hoenk, M. E.; Carver, A. G.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.; Tsur, S.

2013-01-01

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

General method for extracting the quantum efficiency of dispersive qubit readout in circuit QED

NASA Astrophysics Data System (ADS)

Bultink, C. C.; Tarasinski, B.; Haandbæk, N.; Poletto, S.; Haider, N.; Michalak, D. J.; Bruno, A.; DiCarlo, L.

2018-02-01

We present and demonstrate a general three-step method for extracting the quantum efficiency of dispersive qubit readout in circuit QED. We use active depletion of post-measurement photons and optimal integration weight functions on two quadratures to maximize the signal-to-noise ratio of the non-steady-state homodyne measurement. We derive analytically and demonstrate experimentally that the method robustly extracts the quantum efficiency for arbitrary readout conditions in the linear regime. We use the proven method to optimally bias a Josephson traveling-wave parametric amplifier and to quantify different noise contributions in the readout amplification chain.

Robust Timing Synchronization for Aviation Communications, and Efficient Modulation and Coding Study for Quantum Communication

NASA Technical Reports Server (NTRS)

Xiong, Fugin

2003-01-01

One half of Professor Xiong's effort will investigate robust timing synchronization schemes for dynamically varying characteristics of aviation communication channels. The other half of his time will focus on efficient modulation and coding study for the emerging quantum communications.

Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range

NASA Astrophysics Data System (ADS)

Zolotov, P.; Divochiy, A.; Vakhtomin, Yu.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K.

2018-02-01

We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.

Investigation of transparent conductive electrodes for application in heterojunction silicon wafer solar cells

NASA Astrophysics Data System (ADS)

Huang, Mei

This thesis focuses on the fabrication, characterisation and analysis of high-quality transparent conductive electrodes for application in heterojunction silicon wafer solar cells. Indium tin oxide (ITO) is the material of interest, which is investigated by both the pulsed direct current (PDC) and the unbalanced radio frequency (URF) magnetron sputtering methods. The influences of deposition parameters and annealing conditions on the performance of the ITO films are studied and the optimal deposition conditions are established for both systems. The results show that ITO films with low crystallinity have degraded electrical properties after annealing at 200°C. The degradation of ITO film properties is associated with the excess scattering centres formed along with the newly crystallised regions, which significantly deteriorate the electron mobility. The relationships between the deposition conditions and the material properties are investigated by X-ray photoelectron spectroscopy (XPS). It is shown that the major electron donors in amorphous ITO films are oxygen vacancies. With the increase of the film crystallinity, the doping efficiency of Sn atoms improves. The substitutional Sn atoms contribute additional free electrons in ITO films, which improve the film's conductivity. It is also shown that the darkening of ITO films observed in PDC sputtering is due to the existence of second phase Sn3O4, which severely darken the ITO sample when it is excessively present in the surface layer and in the bulk of the film. The hydrogen gas used in the URF sputtering method is shown to effectively lower the concentration of free electrons. Benefiting from the reduced electron scattering by ionized dopant atoms, the ITO films deposited with hydrogen gas maintain a high electron mobility. Besides the ITO material properties, the sputter induced damages are also studied. It is shown that in PDC sputtering the ion bombardment damage is the primary damage contributor, while plasma luminescence damage is the main cause of damage in URF sputtering. A few HET solar cells are fabricated by varying only the ITO deposition conditions in the URF sputtering system. It is shown that the deposition temperature and the chamber ambient are crucial for achieving good ITO properties and for maintaining good interface properties. The champion solar cell shows a respectable efficiency of 19.7%. By means of detailed loss analyses of the cells' fill factor (FF) and external quantum efficiency (EQE), the major loss mechanisms are quantified for different ITO deposition conditions. It is demonstrated that, by slightly adjusting the currently used process recipes, HET solar cells with more than 20% efficiency can be achieved. A novel mesh material formed by silver nanoparticles is investigated in order to break the electrical and optical limitations of ITO films. The hybrid structure is formed by superimposing a silver mesh with a thin TCO layer, where the silver mesh and the TCO layer are functioning as the electrical layer and the optical layer, respectively. The developed TCO/SANTE hybrid structure shows a sheet resistance as low as 4.4 O/□ and over 80% visible transmission, which demonstrates its potential to enhance the efficiency of HET solar cells by boosting the conductivity of the front electrode.

Efficient energy transfer in light-harvesting systems: Quantum-classical comparison, flux network, and robustness analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu Jianlan; Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139; Liu Fan

2012-11-07

Following the calculation of optimal energy transfer in thermal environment in our first paper [J. L. Wu, F. Liu, Y. Shen, J. S. Cao, and R. J. Silbey, New J. Phys. 12, 105012 (2010)], full quantum dynamics and leading-order 'classical' hopping kinetics are compared in the seven-site Fenna-Matthews-Olson (FMO) protein complex. The difference between these two dynamic descriptions is due to higher-order quantum corrections. Two thermal bath models, classical white noise (the Haken-Strobl-Reineker (HSR) model) and quantum Debye model, are considered. In the seven-site FMO model, we observe that higher-order corrections lead to negligible changes in the trapping time ormore » in energy transfer efficiency around the optimal and physiological conditions (2% in the HSR model and 0.1% in the quantum Debye model for the initial site at BChl 1). However, using the concept of integrated flux, we can identify significant differences in branching probabilities of the energy transfer network between hopping kinetics and quantum dynamics (26% in the HSR model and 32% in the quantum Debye model for the initial site at BChl 1). This observation indicates that the quantum coherence can significantly change the distribution of energy transfer pathways in the flux network with the efficiency nearly the same. The quantum-classical comparison of the average trapping time with the removal of the bottleneck site, BChl 4, demonstrates the robustness of the efficient energy transfer by the mechanism of multi-site quantum coherence. To reconcile with the latest eight-site FMO model which is also investigated in the third paper [J. Moix, J. L. Wu, P. F. Huo, D. F. Coker, and J. S. Cao, J. Phys. Chem. Lett. 2, 3045 (2011)], the quantum-classical comparison with the flux network analysis is summarized in Appendix C. The eight-site FMO model yields similar trapping time and network structure as the seven-site FMO model but leads to a more disperse distribution of energy transfer pathways.« less

Trade-off between bandwidth and efficiency in semipolar (20 2 ¯ 1 ¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Nami, M.; Oh, S. H.; DenBaars, S. P.; Feezell, D.

2018-05-01

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar (20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40-80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs.

Splitting efficiency and interference effects in a Cooper pair splitter based on a triple quantum dot with ferromagnetic contacts

NASA Astrophysics Data System (ADS)

Bocian, Kacper; Rudziński, Wojciech; Weymann, Ireneusz

2018-05-01

We theoretically study the spin-resolved subgap transport properties of a Cooper pair splitter based on a triple quantum dot attached to superconducting and ferromagnetic leads. Using the Keldysh Green's function formalism, we analyze the dependence of the Andreev conductance, Cooper pair splitting efficiency, and tunnel magnetoresistance on the gate and bias voltages applied to the system. We show that the system's transport properties are strongly affected by spin dependence of tunneling processes and quantum interference between different local and nonlocal Andreev reflections. We also study the effects of finite hopping between the side quantum dots on the Andreev current. This allows for identifying the optimal conditions for enhancing the Cooper pair splitting efficiency of the device. We find that the splitting efficiency exhibits a nonmonotonic dependence on the degree of spin polarization of the leads and the magnitude and type of hopping between the dots. An almost perfect splitting efficiency is predicted in the nonlinear response regime when the energies of the side quantum dots are tuned to the energies of the corresponding Andreev bound states. In addition, we analyzed features of the tunnel magnetoresistance (TMR) for a wide range of the gate and bias voltages, as well as for different model parameters, finding the corresponding sign changes of the TMR in certain transport regimes. The mechanisms leading to these effects are thoroughly discussed.

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.

2017-12-01

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through the emissive region by a drift-diffusion process which results in a highly non-uniform distribution of the light emission and can reduce efficiency. In this paper, the measured variations in the external quantum efficiency of a range of InGaN/GaN LEDs with different numbers of quantum wells (QWs) are shown to compare closely with the predictions of a revised ABC model, in which it is assumed that the electrically injected electrons and holes are uniformly distributed through the multi-quantum well (MQW) region, or nearly so, and hence carrier recombination occurs equally in all the quantum wells. The implications of the reported results are that drift-diffusion plays a far lesser role in cross-well carrier transport than previously thought; that the dominant cause of efficiency droop is intrinsic to the quantum wells and that reductions in the density of non-radiative recombination centers in the MQW would enable the use of more QWs and thereby reduce Auger losses by spreading carriers more evenly across a wider emissive region.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

2000-01-01

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

NASA Astrophysics Data System (ADS)

Mahpeykar, Seyed Milad; Wang, Xihua

2017-02-01

Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

Demonstration of essentiality of entanglement in a Deutsch-like quantum algorithm

NASA Astrophysics Data System (ADS)

Huang, He-Liang; Goswami, Ashutosh K.; Bao, Wan-Su; Panigrahi, Prasanta K.

2018-06-01

Quantum algorithms can be used to efficiently solve certain classically intractable problems by exploiting quantum parallelism. However, the effectiveness of quantum entanglement in quantum computing remains a question of debate. This study presents a new quantum algorithm that shows entanglement could provide advantages over both classical algorithms and quantum algo- rithms without entanglement. Experiments are implemented to demonstrate the proposed algorithm using superconducting qubits. Results show the viability of the algorithm and suggest that entanglement is essential in obtaining quantum speedup for certain problems in quantum computing. The study provides reliable and clear guidance for developing useful quantum algorithms.

Continuous-time quantum walks on multilayer dendrimer networks

NASA Astrophysics Data System (ADS)

Galiceanu, Mircea; Strunz, Walter T.

2016-08-01

We consider continuous-time quantum walks (CTQWs) on multilayer dendrimer networks (MDs) and their application to quantum transport. A detailed study of properties of CTQWs is presented and transport efficiency is determined in terms of the exact and average return probabilities. The latter depends only on the eigenvalues of the connectivity matrix, which even for very large structures allows a complete analytical solution for this particular choice of network. In the case of MDs we observe an interplay between strong localization effects, due to the dendrimer topology, and good efficiency from the linear segments. We show that quantum transport is enhanced by interconnecting more layers of dendrimers.

Efficient universal blind quantum computation.

PubMed

Giovannetti, Vittorio; Maccone, Lorenzo; Morimae, Tomoyuki; Rudolph, Terry G

2013-12-06

We give a cheat sensitive protocol for blind universal quantum computation that is efficient in terms of computational and communication resources: it allows one party to perform an arbitrary computation on a second party's quantum computer without revealing either which computation is performed, or its input and output. The first party's computational capabilities can be extremely limited: she must only be able to create and measure single-qubit superposition states. The second party is not required to use measurement-based quantum computation. The protocol requires the (optimal) exchange of O(Jlog2(N)) single-qubit states, where J is the computational depth and N is the number of qubits needed for the computation.

Demonstration of nonreciprocity in a microwave cavity optomechanical circuit

NASA Astrophysics Data System (ADS)

Peterson, Gabriel; Lecocq, Florent; Kotler, Shlomi; Cicak, Katarina; Simmonds, Raymond; Aumentado, Jose; Teufel, John

The ability to engineer nonreciprocal interactions is essential for many applications including quantum signal processing and quantum transduction. While attributes such as high efficiency and low added noise are always beneficial, for quantum applications these metrics are crucial. Here we present recent experimental results on a parametric, nonreciprocal microwave circuit based on the optomechanical interaction between a superconducting microwave resonator and a mechanically compliant vacuum gap capacitor. Unlike standard Faraday-based circulators, this parametric interaction does not require magnetic fields, and the direction of circulation can be controlled dynamically in situ. Looking forward, such devices could enable programmable, high-efficiency connections between disparate nodes of a quantum network.

Electrically tunable spin filtering for electron tunneling between spin-resolved quantum Hall edge states and a quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiyama, H., E-mail: kiyama@meso.t.u-tokyo.ac.jp; Fujita, T.; Teraoka, S.

2014-06-30

Spin filtering with electrically tunable efficiency is achieved for electron tunneling between a quantum dot and spin-resolved quantum Hall edge states by locally gating the two-dimensional electron gas (2DEG) leads near the tunnel junction to the dot. The local gating can change the potential gradient in the 2DEG and consequently the edge state separation. We use this technique to electrically control the ratio of the dot–edge state tunnel coupling between opposite spins and finally increase spin filtering efficiency up to 91%, the highest ever reported, by optimizing the local gating.

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Yu, Zhi-Ping; Ancona, Mario; Rafferty, Conor; Saini, Subhash (Technical Monitor)

1999-01-01

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Electronic Two-Transition-Induced Enhancement of Emission Efficiency in Polymer Light-Emitting Diodes

PubMed Central

Chen, Ren-Ai; Wang, Cong; Li, Sheng; George, Thomas F.

2013-01-01

With the development of experimental techniques, effective injection and transportation of electrons is proven as a way to obtain polymer light-emitting diodes (PLEDs) with high quantum efficiency. This paper reveals a valid mechanism for the enhancement of quantum efficiency in PLEDs. When an external electric field is applied, the interaction between a negative polaron and triplet exciton leads to an electronic two-transition process, which induces the exciton to emit light and thus improve the emission efficiency of PLEDs. PMID:28809346