Sample records for quantum electronic devices

  1. Indium antimonide quantum well structures for electronic device applications

    NASA Astrophysics Data System (ADS)

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  2. Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

    NASA Astrophysics Data System (ADS)

    Henderson, Gregory Newell

    Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

  3. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

    DOE PAGES

    Park, J.; Ahn, Y.; Tilka, J. A.; ...

    2016-06-20

    Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

  4. Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K.

    2016-07-25

    The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots.more » This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.« less

  5. Using quantum process tomography to characterize decoherence in an analog electronic device

    NASA Astrophysics Data System (ADS)

    Ostrove, Corey; La Cour, Brian; Lanham, Andrew; Ott, Granville

    The mathematical structure of a universal gate-based quantum computer can be emulated faithfully on a classical electronic device using analog signals to represent a multi-qubit state. We describe a prototype device capable of performing a programmable sequence of single-qubit and controlled two-qubit gate operations on a pair of voltage signals representing the real and imaginary parts of a two-qubit quantum state. Analog filters and true-RMS voltage measurements are used to perform unitary and measurement gate operations. We characterize the degradation of the represented quantum state with successive gate operations by formally performing quantum process tomography to estimate the equivalent decoherence channel. Experimental measurements indicate that the performance of the device may be accurately modeled as an equivalent quantum operation closely resembling a depolarizing channel with a fidelity of over 99%. This work was supported by the Office of Naval Research under Grant No. N00014-14-1-0323.

  6. Theory of Electron, Phonon and Spin Transport in Nanoscale Quantum Devices.

    PubMed

    Sadeghi, Hatef

    2018-06-21

    At the level of fundamental science, it was recently demonstrated that molecular wires can mediate long-range phase-coherent tunnelling with remarkably low attenuation over a few nanometre even at room temperature. Furthermore, a large mean free path has been observed in graphene and other graphene-like two-dimensional materials. These create the possibility of using quantum and phonon interference to engineer electron and phonon transport for wide range of applications such as molecular switches, sensors, piezoelectricity, thermoelectricity and thermal management. To understand transport properties of such devices, it is crucial to calculate their electronic and phononic transmission coefficients. The aim of this tutorial article is to review the state-of-art theoretical and mathematical techniques to treat electron, phonon and spin transport in nanoscale molecular junctions. This helps not only to explain new phenomenon observed experimentally but also provides a vital design tool to develop novel nanoscale quantum devices. © 2018 IOP Publishing Ltd.

  7. Quantum state transfer in double-quantum-well devices

    NASA Technical Reports Server (NTRS)

    Jakumeit, Jurgen; Tutt, Marcel; Pavlidis, Dimitris

    1994-01-01

    A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

  8. A tunable few electron triple quantum dot

    NASA Astrophysics Data System (ADS)

    Gaudreau, L.; Kam, A.; Granger, G.; Studenikin, S. A.; Zawadzki, P.; Sachrajda, A. S.

    2009-11-01

    In this paper, we report on a tunable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by complex charge transfer behavior.

  9. Optically programmable electron spin memory using semiconductor quantum dots.

    PubMed

    Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

    2004-11-04

    The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

  10. Giant electron-hole transport asymmetry in ultra-short quantum transistors.

    PubMed

    McRae, A C; Tayari, V; Porter, J M; Champagne, A R

    2017-05-31

    Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

  11. Giant electron-hole transport asymmetry in ultra-short quantum transistors

    PubMed Central

    McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

    2017-01-01

    Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

  12. Quantum Optical Transistor and Other Devices Based on Nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Jin-Jin; Zhu, Ka-Di

    Laser and strong coupling can coexist in a single quantum dot (QD) coupled to nanostructures. This provides an important clue toward the realization of quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful transfer efficiency. Under the radiation of a strong pump laser, a signal laser can be amplified or attenuated via passing through a single quantum dot coupled to a photonic crystal (PC) nanocavity system. Such a switching and amplifying behavior can really implement the quantum optical transistor. By simply turning on or off the input pump laser, the amplified or attenuated signal laser can be obtained immediately. Based on this transistor, we further propose a method to measure the vacuum Rabi splitting of exciton in all-optical domain. Besides, we study the light propagation in a coupled QD and nanomechanical resonator (NR) system. We demonstrate that it is possible to achieve the slow light, fast light, and quantum memory for light on demand, which is based on the mechanically induced coherent population oscillation (MICPO) and exciton polaritons. These QD devices offer a route toward the use of all-optical technique to investigate the coupled QD systems and will make contributions to quantum internets and quantum computers.

  13. Substantially Enhancing Quantum Coherence of Electrons in Graphene via Electron-Plasmon Coupling.

    PubMed

    Cheng, Guanghui; Qin, Wei; Lin, Meng-Hsien; Wei, Laiming; Fan, Xiaodong; Zhang, Huayang; Gwo, Shangjr; Zeng, Changgan; Hou, J G; Zhang, Zhenyu

    2017-10-13

    The interplays between different quasiparticles in solids lay the foundation for a wide spectrum of intriguing quantum effects, yet how the collective plasmon excitations affect the quantum transport of electrons remains largely unexplored. Here we provide the first demonstration that when the electron-plasmon coupling is introduced, the quantum coherence of electrons in graphene is substantially enhanced with the quantum coherence length almost tripled. We further develop a microscopic model to interpret the striking observations, emphasizing the vital role of the graphene plasmons in suppressing electron-electron dephasing. The novel and transformative concept of plasmon-enhanced quantum coherence sheds new insight into interquasiparticle interactions, and further extends a new dimension to exploit nontrivial quantum phenomena and devices in solid systems.

  14. Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Guthrie, Daniel K.

    1998-09-01

    The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

  15. Photovoltaic and thermophotovoltaic devices with quantum barriers

    DOEpatents

    Wernsman, Bernard R [Jefferson Hills, PA

    2007-04-10

    A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

  16. A triple quantum dot based nano-electromechanical memory device

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pozner, R.; Lifshitz, E.; Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Consideringmore » realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.« less

  17. OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Nonlinear optical devices: basic elements of a future optical digital computer?

    NASA Astrophysics Data System (ADS)

    Fischer, R.; Müller, R.

    1989-08-01

    It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.

  18. ZnO nanorods for electronic and photonic device applications

    NASA Astrophysics Data System (ADS)

    Yi, Gyu-Chul; Yoo, Jinkyoung; Park, Won Il; Jung, Sug Woo; An, Sung Jin; Kim, H. J.; Kim, D. W.

    2005-11-01

    We report on catalyst-free growth of ZnO nanorods and their nano-scale electrical and optical device applications. Catalyst-free metalorganic vapor-phase epitaxy (MOVPE) enables fabrication of size-controlled high purity ZnO single crystal nanorods. Various high quality nanorod heterostructures and quantum structures based on ZnO nanorods were also prepared using the MOVPE method and characterized using scanning electron microscopy, transmission electron microscopy, and optical spectroscopy. From the photoluminescence spectra of ZnO/Zn 0.8Mg 0.2O nanorod multi-quantum-well structures, in particular, we observed a systematic blue-shift in their PL peak position due to quantum confinement effect of carriers in nanorod quantum structures. For ZnO/ZnMgO coaxial nanorod heterostructures, photoluminescence intensity was significantly increased presumably due to surface passivation and carrier confinement. In addition to the growth and characterizations of ZnO nanorods and their quantum structures, we fabricated nanoscale electronic devices based on ZnO nanorods. We report on fabrication and device characteristics of metal-oxidesemiconductor field effect transistors (MOSFETs), Schottky diodes, and metal-semiconductor field effect transistors (MESFETs) as examples of the nanodevices. In addition, electroluminescent devices were fabricated using vertically aligned ZnO nanorods grown p-type GaN substrates, exhibiting strong visible electroluminescence.

  19. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  20. Local gate control in carbon nanotube quantum devices

    NASA Astrophysics Data System (ADS)

    Biercuk, Michael Jordan

    This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

  1. A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

    PubMed Central

    Illera, S.; Prades, J. D.; Cirera, A.; Cornet, A.

    2015-01-01

    We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide. PMID:25879055

  2. A transfer hamiltonian model for devices based on quantum dot arrays.

    PubMed

    Illera, S; Prades, J D; Cirera, A; Cornet, A

    2015-01-01

    We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.

  3. Dopant atoms as quantum components in silicon nanoscale devices

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  4. Multi-bit dark state memory: Double quantum dot as an electronic quantum memory

    NASA Astrophysics Data System (ADS)

    Aharon, Eran; Pozner, Roni; Lifshitz, Efrat; Peskin, Uri

    2016-12-01

    Quantum dot clusters enable the creation of dark states which preserve electrons or holes in a coherent superposition of dot states for a long time. Various quantum logic devices can be envisioned to arise from the possibility of storing such trapped particles for future release on demand. In this work, we consider a double quantum dot memory device, which enables the preservation of a coherent state to be released as multiple classical bits. Our unique device architecture uses an external gating for storing (writing) the coherent state and for retrieving (reading) the classical bits, in addition to exploiting an internal gating effect for the preservation of the coherent state.

  5. Multi-million atom electronic structure calculations for quantum dots

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad

    stark shift, coherent coupling of electronic states in a quantum dot molecule etc.; (3) to assess the potential use of the quantum dots in real device implementation and to provide physical insight to the experimentalists. Full three dimensional strain and electronic structure simulations of quantum dot structures containing multi-million atoms are done using NEMO 3-D. Both single and vertically stacked quantum dot structures are analyzed in detail. The results show that the strain and the piezoelectricity significantly impact the electronic structure of these devices. This work shows that the InAs quantum dots when placed in the InGaAs quantum well red shifts the emission wavelength. Such InAs/GaAs-based optical devices can be used for optical-fiber based communication systems at longer wavelengths (1.3um -- 1.5um). Our atomistic simulations of InAs/InGaAs/GaAs quantum dots quantitatively match with the experiment and give the critical insight of the physics involved in these structures. A single quantum dot molecule is studied for coherent quantum coupling of electronic states under the influence of static electric field applied in the growth direction. Such nanostructures can be used in the implementation of quantum information technologies. A close quantitative match with the experimental optical measurements allowed us to get a physical insight into the complex physics of quantum tunnel couplings of electronic states as the device operation switches between atomic and molecular regimes. Another important aspect is to design the quantum dots for a desired isotropic polarization of the optical emissions. Both single and coupled quantum dots are studied for TE/TM ratio engineering. The atomistic study provides a detailed physical analysis of these computationally expensive large nanostructures and serves as a guide for the experimentalists for the design of the polarization independent devices for the optical communication systems.

  6. Interfacing External Quantum Devices to a Universal Quantum Computer

    PubMed Central

    Lagana, Antonio A.; Lohe, Max A.; von Smekal, Lorenz

    2011-01-01

    We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. PMID:22216276

  7. Interfacing external quantum devices to a universal quantum computer.

    PubMed

    Lagana, Antonio A; Lohe, Max A; von Smekal, Lorenz

    2011-01-01

    We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. © 2011 Lagana et al.

  8. Hybrid quantum-classical modeling of quantum dot devices

    NASA Astrophysics Data System (ADS)

    Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

    2017-11-01

    The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

  9. Mechanical flip-chip for ultra-high electron mobility devices

    DOE PAGES

    Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; ...

    2015-09-22

    In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

  10. Hot-electron transfer in quantum-dot heterojunction films.

    PubMed

    Grimaldi, Gianluca; Crisp, Ryan W; Ten Brinck, Stephanie; Zapata, Felipe; van Ouwendorp, Michiko; Renaud, Nicolas; Kirkwood, Nicholas; Evers, Wiel H; Kinge, Sachin; Infante, Ivan; Siebbeles, Laurens D A; Houtepen, Arjan J

    2018-06-13

    Thermalization losses limit the photon-to-power conversion of solar cells at the high-energy side of the solar spectrum, as electrons quickly lose their energy relaxing to the band edge. Hot-electron transfer could reduce these losses. Here, we demonstrate fast and efficient hot-electron transfer between lead selenide and cadmium selenide quantum dots assembled in a quantum-dot heterojunction solid. In this system, the energy structure of the absorber material and of the electron extracting material can be easily tuned via a variation of quantum-dot size, allowing us to tailor the energetics of the transfer process for device applications. The efficiency of the transfer process increases with excitation energy as a result of the more favorable competition between hot-electron transfer and electron cooling. The experimental picture is supported by time-domain density functional theory calculations, showing that electron density is transferred from lead selenide to cadmium selenide quantum dots on the sub-picosecond timescale.

  11. A device adaptive inflow boundary condition for Wigner equations of quantum transport

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jiang, Haiyan; Lu, Tiao; Cai, Wei, E-mail: wcai@uncc.edu

    2014-02-01

    In this paper, an improved inflow boundary condition is proposed for Wigner equations in simulating a resonant tunneling diode (RTD), which takes into consideration the band structure of the device. The original Frensley inflow boundary condition prescribes the Wigner distribution function at the device boundary to be the semi-classical Fermi–Dirac distribution for free electrons in the device contacts without considering the effect of the quantum interaction inside the quantum device. The proposed device adaptive inflow boundary condition includes this effect by assigning the Wigner distribution to the value obtained from the Wigner transform of wave functions inside the device atmore » zero external bias voltage, thus including the dominant effect on the electron distribution in the contacts due to the device internal band energy profile. Numerical results on computing the electron density inside the RTD under various incident waves and non-zero bias conditions show much improvement by the new boundary condition over the traditional Frensley inflow boundary condition.« less

  12. Dirac electrons in quantum rings

    NASA Astrophysics Data System (ADS)

    Gioia, L.; Zülicke, U.; Governale, M.; Winkler, R.

    2018-05-01

    We consider quantum rings realized in materials where the dynamics of charge carriers mimics that of two-dimensional (2D) Dirac electrons. A general theoretical description of the ring-subband structure is developed that applies to a range of currently available 2D systems, including graphene, transition-metal dichalcogenides, and narrow-gap semiconductor quantum wells. We employ the scattering-matrix approach to calculate the electronic two-terminal conductance through the ring and investigate how it is affected by Dirac-electron interference. The interplay of pseudospin chirality and hard-wall confinement is found to distinctly affect the geometric phase that is experimentally accessible in mesoscopic-conductance measurements. We derive an effective Hamiltonian for the azimuthal motion of charge carriers in the ring that yields deeper insight into the physical origin of the observed transport effects, including the unique behavior exhibited by the lowest ring subband in the normal and topological (i.e., band-inverted) regimes. Our paper provides a unified approach to characterizing confined Dirac electrons, which can be used to explore the design of valley- and spintronic devices based on quantum interference and the confinement-tunable geometric phase.

  13. Simulation of electron transport in quantum well devices

    NASA Technical Reports Server (NTRS)

    Miller, D. R.; Gullapalli, K. K.; Reddy, V. R.; Neikirk, D. P.

    1992-01-01

    Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

  14. Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

    PubMed

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-01-13

    We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

  15. Electron transport through magnetic quantum point contacts

    NASA Astrophysics Data System (ADS)

    Day, Timothy Ellis

    Spin-based electronics, or spintronics, has generated a great deal of interest as a possible next-generation integrated circuit technology. Recent experimental and theoretical work has shown that these devices could exhibit increased processing speed, decreased power consumption, and increased integration densities as compared with conventional semiconductor devices. The spintronic device that was designed, fabricated, and tested throughout the course of this work aimed to study the generation of spin-polarized currents in semiconductors using magnetic fringe fields. The device scheme relied on the Zeeman effect in combination with a quantum mechanical barrier to generate spin-polarized currents. The Zeeman effect was used to break the degeneracy of spin-up and spin-down electrons and the quantum mechanical potential to transmit one while rejecting the other. The design was dictated by the drive to maximize the strength of the magnetic fringe field and in turn maximize the energy separation of the two spin species. The device was fabricated using advanced techniques in semiconductor processing including electron beam lithography and DC magnetron sputtering. Measurements were performed in a 3He cryostat equipped with a superconducting magnet at temperatures below 300 mK. Preliminary characterization of the device revealed magnetoconductance oscillations produced by the effect of the transverse confining potential on the density of states and the mobility. Evidence of the effect of the magnetic fringe fields on the transport properties of electrons in the device were observed in multiple device measurements. An abrupt washout of the quantized conductance steps was observed over a minute range of the applied magnetic field. The washout was again observed as electrons were shifted closer to the magnetic gates. In addition, bias spectroscopy demonstrated that the washout occurred despite stronger electron confinement, as compared to a non-magnetic split-gate. Thus, the

  16. Experimental measurement-device-independent quantum digital signatures over a metropolitan network

    NASA Astrophysics Data System (ADS)

    Yin, Hua-Lei; Wang, Wei-Long; Tang, Yan-Lin; Zhao, Qi; Liu, Hui; Sun, Xiang-Xiang; Zhang, Wei-Jun; Li, Hao; Puthoor, Ittoop Vergheese; You, Li-Xing; Andersson, Erika; Wang, Zhen; Liu, Yang; Jiang, Xiao; Ma, Xiongfeng; Zhang, Qiang; Curty, Marcos; Chen, Teng-Yun; Pan, Jian-Wei

    2017-04-01

    Quantum digital signatures (QDSs) provide a means for signing electronic communications with information-theoretic security. However, all previous demonstrations of quantum digital signatures assume trusted measurement devices. This renders them vulnerable against detector side-channel attacks, just like quantum key distribution. Here we exploit a measurement-device-independent (MDI) quantum network, over a metropolitan area, to perform a field test of a three-party MDI QDS scheme that is secure against any detector side-channel attack. In so doing, we are able to successfully sign a binary message with a security level of about 10-7. Remarkably, our work demonstrates the feasibility of MDI QDSs for practical applications.

  17. Fully device-independent quantum key distribution.

    PubMed

    Vazirani, Umesh; Vidick, Thomas

    2014-10-03

    Quantum cryptography promises levels of security that are impossible to replicate in a classical world. Can this security be guaranteed even when the quantum devices on which the protocol relies are untrusted? This central question dates back to the early 1990s when the challenge of achieving device-independent quantum key distribution was first formulated. We answer this challenge by rigorously proving the device-independent security of a slight variant of Ekert's original entanglement-based protocol against the most general (coherent) attacks. The resulting protocol is robust: While assuming only that the devices can be modeled by the laws of quantum mechanics and are spatially isolated from each other and from any adversary's laboratory, it achieves a linear key rate and tolerates a constant noise rate in the devices. In particular, the devices may have quantum memory and share arbitrary quantum correlations with the eavesdropper. The proof of security is based on a new quantitative understanding of the monogamous nature of quantum correlations in the context of a multiparty protocol.

  18. Fully Device-Independent Quantum Key Distribution

    NASA Astrophysics Data System (ADS)

    Vazirani, Umesh; Vidick, Thomas

    2014-10-01

    Quantum cryptography promises levels of security that are impossible to replicate in a classical world. Can this security be guaranteed even when the quantum devices on which the protocol relies are untrusted? This central question dates back to the early 1990s when the challenge of achieving device-independent quantum key distribution was first formulated. We answer this challenge by rigorously proving the device-independent security of a slight variant of Ekert's original entanglement-based protocol against the most general (coherent) attacks. The resulting protocol is robust: While assuming only that the devices can be modeled by the laws of quantum mechanics and are spatially isolated from each other and from any adversary's laboratory, it achieves a linear key rate and tolerates a constant noise rate in the devices. In particular, the devices may have quantum memory and share arbitrary quantum correlations with the eavesdropper. The proof of security is based on a new quantitative understanding of the monogamous nature of quantum correlations in the context of a multiparty protocol.

  19. Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

    NASA Astrophysics Data System (ADS)

    Pala, M. G.; Esseni, D.

    2018-03-01

    This paper presents the theory, implementation, and application of a quantum transport modeling approach based on the nonequilibrium Green's function formalism and a full-band empirical pseudopotential Hamiltonian. We here propose to employ a hybrid real-space/plane-wave basis that results in a significant reduction of the computational complexity compared to a full plane-wave basis. To this purpose, we provide a theoretical formulation in the hybrid basis of the quantum confinement, the self-energies of the leads, and the coupling between the device and the leads. After discussing the theory and the implementation of the new simulation methodology, we report results for complete, self-consistent simulations of different electron devices, including a silicon Esaki diode, a thin-body silicon field effect transistor (FET), and a germanium tunnel FET. The simulated transistors have technologically relevant geometrical features with a semiconductor film thickness of about 4 nm and a channel length ranging from 10 to 17 nm. We believe that the newly proposed formalism may find applications also in transport models based on ab initio Hamiltonians, as those employed in density functional theory methods.

  20. Three-terminal quantum-dot thermal management devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yanchao; Zhang, Xin; Ye, Zhuolin; Lin, Guoxing; Chen, Jincan

    2017-04-01

    We theoretically demonstrate that the heat flows can be manipulated by designing a three-terminal quantum-dot system consisting of three Coulomb-coupled quantum dots connected to respective reservoirs. In this structure, the electron transport between the quantum dots is forbidden, but the heat transport is allowed by the Coulomb interaction to transmit heat between the reservoirs with a temperature difference. We show that such a system is capable of performing thermal management operations, such as heat flow swap, thermal switch, and heat path selector. An important thermal rectifier, i.e., a thermal diode, can be implemented separately in two different paths. The asymmetric configuration of a quantum-dot system is a necessary condition for thermal management operations in practical applications. These results should have important implications in providing the design principle for quantum-dot thermal management devices and may open up potential applications for the thermal management of quantum-dot systems at the nanoscale.

  1. A multiscale quantum mechanics/electromagnetics method for device simulations.

    PubMed

    Yam, ChiYung; Meng, Lingyi; Zhang, Yu; Chen, GuanHua

    2015-04-07

    Multiscale modeling has become a popular tool for research applying to different areas including materials science, microelectronics, biology, chemistry, etc. In this tutorial review, we describe a newly developed multiscale computational method, incorporating quantum mechanics into electronic device modeling with the electromagnetic environment included through classical electrodynamics. In the quantum mechanics/electromagnetics (QM/EM) method, the regions of the system where active electron scattering processes take place are treated quantum mechanically, while the surroundings are described by Maxwell's equations and a semiclassical drift-diffusion model. The QM model and the EM model are solved, respectively, in different regions of the system in a self-consistent manner. Potential distributions and current densities at the interface between QM and EM regions are employed as the boundary conditions for the quantum mechanical and electromagnetic simulations, respectively. The method is illustrated in the simulation of several realistic systems. In the case of junctionless field-effect transistors, transfer characteristics are obtained and a good agreement between experiments and simulations is achieved. Optical properties of a tandem photovoltaic cell are studied and the simulations demonstrate that multiple QM regions are coupled through the classical EM model. Finally, the study of a carbon nanotube-based molecular device shows the accuracy and efficiency of the QM/EM method.

  2. Measurements of undoped accumulation-mode SiGe quantum dot devices

    NASA Astrophysics Data System (ADS)

    Eng, Kevin; Borselli, Mathew; Holabird, Kevin; Milosavljevic, Ivan; Schmitz, Adele; Deelman, Peter; Huang, Biqin; Sokolich, Marko; Warren, Leslie; Hazard, Thomas; Kiselev, Andrey; Ross, Richard; Gyure, Mark; Hunter, Andrew

    2012-02-01

    We report transport measurements of undoped single-well accumulation-mode SiGe quantum dot devices with an integrated dot charge sensor. The device is designed so that individual forward-biased circular gates have dominant control of dot charge occupancy, and separate intervening gates have dominant control of tunnel rates and exchange coupling. We have demonstrated controlled loading of the first electron in single and double quantum dots. We used magneto-spectroscopy to measure singlet-triplet splittings in our quantum dots: values are typically ˜0.1 meV. Tunnel rates of single electrons to the baths can be controlled from less than 1 Hz to greater than 10 MHz. We are able to control the (0,2) to (1,1) coupling in a double quantum dot from under-coupled (tc < kT˜ 5μeV) to over-coupled (tc ˜ 0.1 meV) with a bias control of one exchange gate. Sponsored by the United States Department of Defense. Approved for Public Release, Distribution Unlimited. The views expressed are those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government.

  3. Beyond Moore's law: towards competitive quantum devices

    NASA Astrophysics Data System (ADS)

    Troyer, Matthias

    2015-05-01

    A century after the invention of quantum theory and fifty years after Bell's inequality we see the first quantum devices emerge as products that aim to be competitive with the best classical computing devices. While a universal quantum computer of non-trivial size is still out of reach there exist a number commercial and experimental devices: quantum random number generators, quantum simulators and quantum annealers. In this colloquium I will present some of these devices and validation tests we performed on them. Quantum random number generators use the inherent randomness in quantum measurements to produce true random numbers, unlike classical pseudorandom number generators which are inherently deterministic. Optical lattice emulators use ultracold atomic gases in optical lattices to mimic typical models of condensed matter physics. In my talk I will focus especially on the devices built by Canadian company D-Wave systems, which are special purpose quantum simulators for solving hard classical optimization problems. I will review the controversy around the quantum nature of these devices and will compare them to state of the art classical algorithms. I will end with an outlook towards universal quantum computing and end with the question: which important problems that are intractable even for post-exa-scale classical computers could we expect to solve once we have a universal quantum computer?

  4. Building devices from colloidal quantum dots.

    PubMed

    Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

    2016-08-26

    The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

  5. A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

    NASA Astrophysics Data System (ADS)

    Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

    2017-04-01

    Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

  6. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    PubMed Central

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  7. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Using Quantum Confinement to Uniquely Identify Devices

    PubMed Central

    Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.

    2015-01-01

    Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature. PMID:26553435

  9. Polariton devices and quantum fluids

    NASA Astrophysics Data System (ADS)

    Ballarini, D.; De Giorgi, M.; Lerario, G.; Cannavale, A.; Cancellieri, E.; Bramati, A.; Gigli, G.; Laussy, F.; Sanvitto, D.

    2014-02-01

    Exciton-polaritons, composite particles resulting from the strong coupling between excitons and photons, have shown the capability to undergo condensation into a macroscopically coherent quantum state, demonstrating strong non-linearities and unique propagation properties. These strongly-coupled light-matter particles are promising candidates for the realization of semiconductor all-optical devices with fast time response and small energy consumption. Recently, quantum fluids of polaritons have been used to demonstrate the possibility to implement optical functionalities as spin switches, transistors or memories, but also to provide a channel for the transmission of information inside integrated circuits. In this context, the possibility to extend the range of light-matter interaction up to room temperature becomes of crucial importance. One of the most intriguing promises is to use organic Frenkel excitons, which, thanks to their huge oscillator strength, not only sustain the polariton picture at room temperature, but also bring the system into the unexplored regime of ultra-strong coupling. The combination of these materials with ad-hoc designed structures may allow the control of the propagation properties of polaritons, paving the way towards their implementation of the polariton functionalities in actual devices for opto-electronic applications.

  10. Device-independent quantum key distribution

    NASA Astrophysics Data System (ADS)

    Hänggi, Esther

    2010-12-01

    In this thesis, we study two approaches to achieve device-independent quantum key distribution: in the first approach, the adversary can distribute any system to the honest parties that cannot be used to communicate between the three of them, i.e., it must be non-signalling. In the second approach, we limit the adversary to strategies which can be implemented using quantum physics. For both approaches, we show how device-independent quantum key distribution can be achieved when imposing an additional condition. In the non-signalling case this additional requirement is that communication is impossible between all pairwise subsystems of the honest parties, while, in the quantum case, we demand that measurements on different subsystems must commute. We give a generic security proof for device-independent quantum key distribution in these cases and apply it to an existing quantum key distribution protocol, thus proving its security even in this setting. We also show that, without any additional such restriction there always exists a successful joint attack by a non-signalling adversary.

  11. Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

    NASA Astrophysics Data System (ADS)

    Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

    2014-10-01

    We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

  12. Performance of device-independent quantum key distribution

    NASA Astrophysics Data System (ADS)

    Cao, Zhu; Zhao, Qi; Ma, Xiongfeng

    2016-07-01

    Quantum key distribution provides information-theoretically-secure communication. In practice, device imperfections may jeopardise the system security. Device-independent quantum key distribution solves this problem by providing secure keys even when the quantum devices are untrusted and uncharacterized. Following a recent security proof of the device-independent quantum key distribution, we improve the key rate by tightening the parameter choice in the security proof. In practice where the system is lossy, we further improve the key rate by taking into account the loss position information. From our numerical simulation, our method can outperform existing results. Meanwhile, we outline clear experimental requirements for implementing device-independent quantum key distribution. The maximal tolerable error rate is 1.6%, the minimal required transmittance is 97.3%, and the minimal required visibility is 96.8 % .

  13. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  14. Optical biosensors: a revolution towards quantum nanoscale electronics device fabrication.

    PubMed

    Dey, D; Goswami, T

    2011-01-01

    The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  15. Phonoconductivity measurements of the electron-phonon interaction in quantum wire structures

    NASA Astrophysics Data System (ADS)

    Naylor, A. J.; Strickland, K. R.; Kent, A. J.; Henini, M.

    1996-07-01

    We have used a phonoconductivity technique to investigate the electron-phonon interaction in quantum wires. This interaction has important consequences for certain aspects of device behaviour. The 10 μm long wires were formed in GaAs/AlGaAs heterojunctions using split-gates. Ballistic phonon pulses, with an approximately Planckian frequency spectrum, were generated by a resistive film heater on the opposite side of the substrate. The interaction of the phonons with the quantum wire was detected via changes in conductance of the device. Oscillations in the phonoconductivity were observed with increasing (negative) gate bias. These oscillations were related to the Fermi level position relative to the one-dimensional subband structure which was determined from electrical transport measurements. We give a qualitative explanation of the results in terms of phonon induced inter- and intra- 1D subband electronic transitions leading to changes in the electron temperature which in turn affect the conductance. From our results we obtain a value for the effective width of the quantum wire.

  16. Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

    NASA Astrophysics Data System (ADS)

    Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

    2012-01-01

    Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

  17. Phonon-induced dissipation and decoherence in solid-state quantum devices: Markovian versus non-Markovian treatments

    NASA Astrophysics Data System (ADS)

    Iotti, Rita Claudia; Rossi, Fausto

    2017-12-01

    Microscopic modeling of electronic phase coherence versus energy dissipation plays a crucial role in the design and optimization of new-generation electronic quantum nanodevices, like quantum-cascade light sources and quantum logic gates; in this context, non-Markovian density-matrix approaches are widely used simulation strategies. Here we show that such methods, along with valuable virtues, in some circumstances may exhibit potential limitations that need to be taken into account for a reliable description of quantum materials and related devices. More specifically, extending the analysis recently proposed in [EPL 112, 67005 (2015)] to high temperatures and degenerate conditions, we show that the usual mean-field treatment - employed to derive quantum-kinetic equations - in some cases may lead to anomalous results, characterized by decoherence suppression and positivity violations. By means of a simple two-level model, we show that such unexpected behaviors may affect zero-dimensional electronic systems coupled to dispersionless phonon modes, while such anomalies are expected to play a negligible role in nanosystems with higher dimensionality; these limitations are found to be significant in the low-density and low-temperature limit, while in the degenerate and/or finite-temperature regime - typical of many state-of-the-art quantum devices - their impact is strongly reduced.

  18. A quantum optical firewall based on simple quantum devices

    NASA Astrophysics Data System (ADS)

    Amellal, H.; Meslouhi, A.; Hassouni, Y.; El Baz, M.

    2015-07-01

    In order to enhance the transmission security in quantum communications via coherent states, we propose a quantum optical firewall device to protect a quantum cryptosystem against eavesdropping through optical attack strategies. Similar to the classical model of the firewall, the proposed device gives legitimate users the possibility of filtering, controlling (input/output states) and making a decision (access or deny) concerning the traveling states. To prove the security and efficiency of the suggested optical firewall, we analyze its performances against the family of intercept and resend attacks, especially against one of the most prominent attack schemes known as "Faked State Attack."

  19. Ultrafast electronic dynamics in unipolar n-doped indium gallium arsenide/gallium arsenide self-assembled quantum dots

    NASA Astrophysics Data System (ADS)

    Wu, Zong-Kwei J.

    2006-12-01

    Photodetectors based on intraband infrared absorption in the quantum dots have demonstrated improved performance over its quantum well counterpart by lower dark current, relative temperature insensitivity, and its ability for normal incidence operation. Various scattering processes, including phonon emission/absorption and carrier-carrier scattering, are critical in understanding device operation on the fundamental level. In previous studies, our group has investigated carrier dynamics in both low- and high-density regime. Ultrafast electron-hole scattering and the predicted phonon bottleneck effect in intrinsic quantum dots have been observed. Further examination on electron dynamics in unipolar structures is presented in this thesis. We used n-doped quantum dot in mid-infrared photodetector device structure to study the electron dynamics in unipolar structure. Differential transmission spectroscopy with mid-infrared intraband pump and optical interband probe was implemented to measure the electron dynamics directly without creating extra electron-hole pair, Electron relaxation after excitation was measured under various density and temperature conditions. Rapid capture into quantum dot within ˜ 10 ps was observed due to Auger-type electron-electron scattering. Intradot relaxation from the quantum dot excited state to the ground state was also observed on the time scale of 100 ps. With highly doped electron density in the structure, the inter-sublevel relaxation is dominated by Auger-type electron-electron scattering and the phonon bottleneck effect is circumvented. Nanosecond-scale recovery in larger-sized quantum dots was observed, not intrinsic to electron dynamics but due to band-bending and built-in voltage drift. An ensemble Monte Carlo simulation was also established to model the dynamics in quantum dots and in goad agreement with the experimental results. We presented a comprehensive picture of electron dynamics in the unipolar quantum dot structure

  20. Multiplexed charge-locking device for large arrays of quantum devices

    NASA Astrophysics Data System (ADS)

    Puddy, R. K.; Smith, L. W.; Al-Taie, H.; Chong, C. H.; Farrer, I.; Griffiths, J. P.; Ritchie, D. A.; Kelly, M. J.; Pepper, M.; Smith, C. G.

    2015-10-01

    We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.

  1. Applications and research on nano power electronics: an adventure beyond quantum electronics

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arindam; Emadi, Ali

    2005-06-01

    This paper is a roadmap to the exhaustive role of the newly emerging field of nanotechnology in various application and research areas. Some of the today's important topics are plasma, dielectric layer semiconductor, and carbon nanoparticle based technologies. Carbon nanotubes are very useful for the purpose of fabricating nano opto power devices. The basic concept behind tunneling of electrons has been utilized to define another scope of this technology, and thus came many quantum scale tunneling devices and elements. Fabrication of crystal semiconductors of high quality along with oxides of nano aspect would give rise to superior device performance and find applications such as LEDs, LASER, VLSI technology and also in highly efficient solar cells. Many nano-research based organizations are fully devoted to develop nano power cells, which would give birth to new battery cells, tunneling devises, with high power quality, longer lives, and higher activation rates. Different electronics industries as well as the military organizations would be largely benefited due to this major component and system design ideas of 'Smart Power' technologies. The contribution of nano scale power electronics would be realized in various fields like switching devices, electromechanical systems and quantum science. Such a sophisticated technology will have great impact on the modernization of robotics; space systems, automotive systems and many other fields. The highly emerging field of nanomedicine according to specialists would bring a dramatic revolution in the present century. However nanomedicine is nothing but an integration of biology, medicine and technology. Thermoelectric materials as been referred earlier also are used in case of implantable medical equipments for generation of electric power sufficient for those equipments.

  2. First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability

    NASA Astrophysics Data System (ADS)

    Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

    2017-03-01

    Because disorders are inevitable in realistic nanodevices, the capability to quantitatively simulate the disorder effects on electron transport is indispensable for quantum transport theory. Here, we report a unified and effective first-principles quantum transport method for analyzing effects of chemical or substitutional disorder on transport properties of nanoelectronics, including averaged transmission coefficient, shot noise, and disorder-induced device-to-device variability. All our theoretical formulations and numerical implementations are worked out within the framework of the tight-binding linear muffin tin orbital method. In this method, we carry out the electronic structure calculation with the density functional theory, treat the nonequilibrium statistics by the nonequilbrium Green's function method, and include the effects of multiple impurity scattering with the generalized nonequilibrium vertex correction (NVC) method in coherent potential approximation (CPA). The generalized NVC equations are solved from first principles to obtain various disorder-averaged two-Green's-function correlators. This method provides a unified way to obtain different disorder-averaged transport properties of disordered nanoelectronics from first principles. To test our implementation, we apply the method to investigate the shot noise in the disordered copper conductor, and find all our results for different disorder concentrations approach a universal Fano factor 1 /3 . As the second test, we calculate the device-to-device variability in the spin-dependent transport through the disordered Cu/Co interface and find the conductance fluctuation is very large in the minority spin channel and negligible in the majority spin channel. Our results agree well with experimental measurements and other theories. In both applications, we show the generalized nonequilibrium vertex corrections play a determinant role in electron transport simulation. Our results demonstrate the

  3. Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Klymenko, M. V.; Klein, M.; Levine, R. D.

    2016-07-14

    A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states correspondsmore » to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.« less

  4. Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

    NASA Astrophysics Data System (ADS)

    Enoki, Toshiaki; Kiguchi, Manabu

    2018-03-01

    Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

  5. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-02-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  6. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.

    PubMed

    Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V

    2011-01-04

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.

  7. Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

    NASA Astrophysics Data System (ADS)

    Al-Taie, H.; Smith, L. W.; Xu, B.; See, P.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

    2013-06-01

    We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

  8. Measurement-device-independent quantum key distribution.

    PubMed

    Lo, Hoi-Kwong; Curty, Marcos; Qi, Bing

    2012-03-30

    How to remove detector side channel attacks has been a notoriously hard problem in quantum cryptography. Here, we propose a simple solution to this problem--measurement-device-independent quantum key distribution (QKD). It not only removes all detector side channels, but also doubles the secure distance with conventional lasers. Our proposal can be implemented with standard optical components with low detection efficiency and highly lossy channels. In contrast to the previous solution of full device independent QKD, the realization of our idea does not require detectors of near unity detection efficiency in combination with a qubit amplifier (based on teleportation) or a quantum nondemolition measurement of the number of photons in a pulse. Furthermore, its key generation rate is many orders of magnitude higher than that based on full device independent QKD. The results show that long-distance quantum cryptography over say 200 km will remain secure even with seriously flawed detectors.

  9. Epitaxy of advanced nanowire quantum devices

    NASA Astrophysics Data System (ADS)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  10. Coprocessors for quantum devices

    NASA Astrophysics Data System (ADS)

    Kay, Alastair

    2018-03-01

    Quantum devices, from simple fixed-function tools to the ultimate goal of a universal quantum computer, will require high-quality, frequent repetition of a small set of core operations, such as the preparation of entangled states. These tasks are perfectly suited to realization by a coprocessor or supplementary instruction set, as is common practice in modern CPUs. In this paper, we present two quintessentially quantum coprocessor functions: production of a Greenberger-Horne-Zeilinger state and implementation of optimal universal (asymmetric) quantum cloning. Both are based on the evolution of a fixed Hamiltonian. We introduce a technique for deriving the parameters of these Hamiltonians based on the numerical integration of Toda-like flows.

  11. Exciton shelves for charge and energy transport in third-generation quantum-dot devices

    NASA Astrophysics Data System (ADS)

    Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant

    2014-03-01

    Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.

  12. Fabrication techniques and applications of flexible graphene-based electronic devices

    NASA Astrophysics Data System (ADS)

    Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

    2016-04-01

    In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

  13. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles

    PubMed Central

    Tvrdy, Kevin; Frantsuzov, Pavel A.; Kamat, Prashant V.

    2011-01-01

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO2, TiO2, and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO2) were not the same as those which showed the highest photocurrent (TiO2). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency. PMID:21149685

  14. Multimode quantum interference of photons in multiport integrated devices

    PubMed Central

    Peruzzo, Alberto; Laing, Anthony; Politi, Alberto; Rudolph, Terry; O'Brien, Jeremy L.

    2011-01-01

    Photonics is a leading approach in realizing future quantum technologies and recently, optical waveguide circuits on silicon chips have demonstrated high levels of miniaturization and performance. Multimode interference (MMI) devices promise a straightforward implementation of compact and robust multiport circuits. Here, we show quantum interference in a 2×2 MMI coupler with visibility of V=95.6±0.9%. We further demonstrate the operation of a 4×4 port MMI device with photon pairs, which exhibits complex quantum interference behaviour. We have developed a new technique to fully characterize such multiport devices, which removes the need for phase-sensitive measurements and may find applications for a wide range of photonic devices. Our results show that MMI devices can operate in the quantum regime with high fidelity and promise substantial simplification and concatenation of photonic quantum circuits. PMID:21364563

  15. A comparative analysis of electronic and molecular quantum dot cellular automata

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Umamahesvari, H., E-mail: umamaheswarihema@gmail.com, E-mail: ajithavijay1@gmail.com; Ajitha, D., E-mail: umamaheswarihema@gmail.com, E-mail: ajithavijay1@gmail.com

    This paper presents a comparative analysis of electronic quantum-dot cellular automata (EQCA) and Magnetic quantum dot Cellular Automata (MQCA). QCA is a computing paradigm that encodes and processes information by the position of individual electrons. To enhance the high dense and ultra-low power devices, various researches have been actively carried out to find an alternative way to continue and follow Moore’s law, so called “beyond CMOS technology”. There have been several proposals for physically implementing QCA, EQCA and MQCA are the two important QCAs reported so far. This paper provides a comparative study on these two QCAs.

  16. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    DOE PAGES

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; ...

    2015-03-30

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less

  17. Deformable devices with integrated functional nanomaterials for wearable electronics.

    PubMed

    Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

    2016-01-01

    As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

  18. Deformable devices with integrated functional nanomaterials for wearable electronics

    NASA Astrophysics Data System (ADS)

    Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

    2016-03-01

    As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

  19. Storing quantum information for 30 seconds in a nanoelectronic device.

    PubMed

    Muhonen, Juha T; Dehollain, Juan P; Laucht, Arne; Hudson, Fay E; Kalra, Rachpon; Sekiguchi, Takeharu; Itoh, Kohei M; Jamieson, David N; McCallum, Jeffrey C; Dzurak, Andrew S; Morello, Andrea

    2014-12-01

    The spin of an electron or a nucleus in a semiconductor naturally implements the unit of quantum information--the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms, or charge and spin fluctuations arising from defects in oxides and interfaces. For materials such as silicon, enrichment of the spin-zero (28)Si isotope drastically reduces spin-bath decoherence. Experiments on bulk spin ensembles in (28)Si crystals have indeed demonstrated extraordinary coherence times. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual (31)P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered (28)Si substrate. The (31)P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy indicates that--contrary to widespread belief--it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

  20. Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

    NASA Astrophysics Data System (ADS)

    Hou, H.; Chung, Y.; Rughoobur, G.; Hsiao, T. K.; Nasir, A.; Flewitt, A. J.; Griffiths, J. P.; Farrer, I.; Ritchie, D. A.; Ford, C. J. B.

    2018-06-01

    In a model of a gate-patterned quantum device, it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a  ∼0.2 V offset in pinch-off characteristics of 1D channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software.

  1. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

    NASA Astrophysics Data System (ADS)

    Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.; Schopfer, F.

    2015-11-01

    The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10-9 over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10-11, supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.

  2. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Noiri, A.; Yoneda, J.; Nakajima, T.

    2016-04-11

    Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantummore » dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.« less

  4. Electronic structures of GaAs/AlxGa1-xAs quantum double rings

    PubMed Central

    Xia, Jian-Bai

    2006-01-01

    In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

  5. Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Paik, Young Hun

    the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.

  6. Nonreciprocal quantum Hall devices with driven edge magnetoplasmons in two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Bosco, S.; DiVincenzo, D. P.

    2017-05-01

    We develop a theory that describes the response of nonreciprocal devices employing two-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model can incorporate several cases that were often treated on different grounds in literature. In particular, we analyze plasmonic excitations supported by a smooth and sharp confining potential in a two-dimensional electron gas, and in monolayer graphene, and we point out the similarities and differences in these materials. We also account for a general time-dependent external drive applied to the system. Finally, we describe the behavior of a nonreciprocal quantum Hall device: the response contains additional resonant features, which were not foreseen from previous models.

  7. Electron Spin Coherence Times in Si/SiGe Quantum Dots

    NASA Astrophysics Data System (ADS)

    Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

    2014-03-01

    Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).

  8. Two dimensional electron systems for solid state quantum computation

    NASA Astrophysics Data System (ADS)

    Mondal, Sumit

    Two dimensional electron systems based on GaAs/AlGaAs heterostructures are extremely useful in various scientific investigations of recent times including the search for quantum computational schemes. Although significant strides have been made over the past few years to realize solid state qubits on GaAs/AlGaAs 2DEGs, there are numerous factors limiting the progress. We attempt to identify factors that have material and design-specific origin and develop ways to overcome them. The thesis is divided in two broad segments. In the first segment we describe the realization of a new field-effect induced two dimensional electron system on GaAs/AlGaAs heterostructure where the novel device-design is expected to suppress the level of charge noise present in the device. Modulation-doped GaAs/AlGaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect that is tunable over a density range of 6.5x10 10cm-2 to 2.6x1011cm-2 . Device design, fabrication, and low temperature (T=0.3K) characterization results are discussed. The demonstrated device-design overcomes several existing limitations in the fabrication of field-induced 2DEGs and might find utility in hosting nanostructures required for making spin qubits. The second broad segment describes our effort to correlate transport parameters measured at T=0.3K to the strength of the fractional quantum Hall state observed at nu=5/2 in the second Landau level of high-mobility GaAs/AlGaAs two dimensional

  9. Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-Electronic Devices.

    NASA Astrophysics Data System (ADS)

    Huang, Daming

    1990-01-01

    In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

  10. A photovoltaic device structure based on internal electron emission.

    PubMed

    McFarland, Eric W; Tang, Jing

    2003-02-06

    There has been an active search for cost-effective photovoltaic devices since the development of the first solar cells in the 1950s (refs 1-3). In conventional solid-state solar cells, electron-hole pairs are created by light absorption in a semiconductor, with charge separation and collection accomplished under the influence of electric fields within the semiconductor. Here we report a multilayer photovoltaic device structure in which photon absorption instead occurs in photoreceptors deposited on the surface of an ultrathin metal-semiconductor junction Schottky diode. Photoexcited electrons are transferred to the metal and travel ballistically to--and over--the Schottky barrier, so providing the photocurrent output. Low-energy (approximately 1 eV) electrons have surprisingly long ballistic path lengths in noble metals, allowing a large fraction of the electrons to be collected. Unlike conventional cells, the semiconductor in this device serves only for majority charge transport and separation. Devices fabricated using a fluorescein photoreceptor on an Au/TiO2/Ti multilayer structure had typical open-circuit photovoltages of 600-800 mV and short-circuit photocurrents of 10-18 micro A cm(-2) under 100 mW cm(-2) visible band illumination: the internal quantum efficiency (electrons measured per photon absorbed) was 10 per cent. This alternative approach to photovoltaic energy conversion might provide the basis for durable low-cost solar cells using a variety of materials.

  11. Quantum heat engines and refrigerators: continuous devices.

    PubMed

    Kosloff, Ronnie; Levy, Amikam

    2014-01-01

    Quantum thermodynamics supplies a consistent description of quantum heat engines and refrigerators up to a single few-level system coupled to the environment. Once the environment is split into three (a hot, cold, and work reservoir), a heat engine can operate. The device converts the positive gain into power, with the gain obtained from population inversion between the components of the device. Reversing the operation transforms the device into a quantum refrigerator. The quantum tricycle, a device connected by three external leads to three heat reservoirs, is used as a template for engines and refrigerators. The equation of motion for the heat currents and power can be derived from first principles. Only a global description of the coupling of the device to the reservoirs is consistent with the first and second laws of thermodynamics. Optimization of the devices leads to a balanced set of parameters in which the couplings to the three reservoirs are of the same order and the external driving field is in resonance. When analyzing refrigerators, one needs to devote special attention to a dynamical version of the third law of thermodynamics. Bounds on the rate of cooling when Tc→0 are obtained by optimizing the cooling current. All refrigerators as Tc→0 show universal behavior. The dynamical version of the third law imposes restrictions on the scaling as Tc→0 of the relaxation rate γc and heat capacity cV of the cold bath.

  12. Graphene and Carbon Quantum Dot-Based Materials in Photovoltaic Devices: From Synthesis to Applications

    PubMed Central

    Paulo, Sofia; Palomares, Emilio; Martinez-Ferrero, Eugenia

    2016-01-01

    Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV). Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized solar cells. In this review, we summarize the most common uses of both types of semiconducting materials and highlight the significant advances made in recent years due to the influence that synthetic materials have on final performance. PMID:28335285

  13. Practical device-independent quantum cryptography via entropy accumulation.

    PubMed

    Arnon-Friedman, Rotem; Dupuis, Frédéric; Fawzi, Omar; Renner, Renato; Vidick, Thomas

    2018-01-31

    Device-independent cryptography goes beyond conventional quantum cryptography by providing security that holds independently of the quality of the underlying physical devices. Device-independent protocols are based on the quantum phenomena of non-locality and the violation of Bell inequalities. This high level of security could so far only be established under conditions which are not achievable experimentally. Here we present a property of entropy, termed "entropy accumulation", which asserts that the total amount of entropy of a large system is the sum of its parts. We use this property to prove the security of cryptographic protocols, including device-independent quantum key distribution, while achieving essentially optimal parameters. Recent experimental progress, which enabled loophole-free Bell tests, suggests that the achieved parameters are technologically accessible. Our work hence provides the theoretical groundwork for experimental demonstrations of device-independent cryptography.

  14. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  15. Investigation of electronic noise in selected mesoscopic devices

    NASA Astrophysics Data System (ADS)

    Camino, Fernando Enrique

    In the last few years, several experiments and theoretical works have confirmed the importance of shot-noise measurements as a source of information about the charge transport in electronic devices, information that is not in all cases accessible from conductance measurements. The use of shot-noise for the direct confirmation of the fractional charge in the fractional quantum Hall effect or the identification of the transport mechanism in negative differential resistance devices are a few examples of its importance. In this thesis, we have performed shot-noise measurements on two semiconductor-based systems in which shot noise is different from the Poissonian value 2eI The first one is a superconductor/semiconductor/superconductor (sp/sm/sp) junction where the superconducting electrodes are 0.5 um apart and the semiconductor bridge between them is composed of a two-dimensional electron gas (2-DEG). The second system is a 2-DEG in the hopping conduction regime. The fabrication of sp/sm/sp junctions is explained in detail in this work as so are the noise measurements of two devices that show enhancement from the Poissonian value. These devices present the signatures of the phenomenon of Andreev reflections and supercurrent at 1.2K; therefore, we tentatively attribute the enhancement to this phenomenon, which has been predicted to give giant noise enhancement for superconducting quantum point contacts (SQPC). On the other hand, in the hoping conduction device, we have observed shot-noise suppression from its classical value, confirming in a different material system a previous experimental result that was explained by percolation theory. In addition, we have driven the system to a region where percolation theory seems to fail, signaling a reconstruction of the hopping trajectories.

  16. Device-independent secret-key-rate analysis for quantum repeaters

    NASA Astrophysics Data System (ADS)

    Holz, Timo; Kampermann, Hermann; Bruß, Dagmar

    2018-01-01

    The device-independent approach to quantum key distribution (QKD) aims to establish a secret key between two or more parties with untrusted devices, potentially under full control of a quantum adversary. The performance of a QKD protocol can be quantified by the secret key rate, which can be lower bounded via the violation of an appropriate Bell inequality in a setup with untrusted devices. We study secret key rates in the device-independent scenario for different quantum repeater setups and compare them to their device-dependent analogon. The quantum repeater setups under consideration are the original protocol by Briegel et al. [Phys. Rev. Lett. 81, 5932 (1998), 10.1103/PhysRevLett.81.5932] and the hybrid quantum repeater protocol by van Loock et al. [Phys. Rev. Lett. 96, 240501 (2006), 10.1103/PhysRevLett.96.240501]. For a given repeater scheme and a given QKD protocol, the secret key rate depends on a variety of parameters, such as the gate quality or the detector efficiency. We systematically analyze the impact of these parameters and suggest optimized strategies.

  17. Electronic properties of new topological quantum materials

    NASA Astrophysics Data System (ADS)

    Kaminski, Adam

    Topological materials are characterized by the presence of nontrivial quantum electronic states, where often the electron spin is locked to its momentum. This opens up the possibility for developing new devices in which information is processed or stored by means of spin rather than charge. In this talk we will discuss the electronic properties of several of newly discovered topological quantum materials. In WTe2 we have observed a topological transition involving a change of the Fermi surface topology (known as a Lifshitz transition) driven by temperature. The strong temperature-dependence of the chemical potential that is at the heart of this phenomenon is also important for understanding the thermoelectric properties of such semimetals. Both WTe2 and MoTe2 were proposed to host type II Weyl semimetalic state. Indeed our data provides first experimental confirmation of such state in both of these materials. We will also present evidence for a new topological state in PtSn4 where pairs of extended Dirac node arcs rather are present rather than Dirac points, that is so far not understood theoretically. Our research opens up new directions on enhancing topological responsiveness of new quantum materials. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division (ARPES measurements), Center for Emergent Materials, an NSF MRSEC, under Grant DMR-1420451 (theory and data anal.

  18. Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Horibe, Kosuke; Oda, Shunri; Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp

    2015-02-23

    Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. Themore » lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.« less

  19. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Rafferty, Conor S.; Ancona, Mario G.; Yu, Zhi-Ping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  20. Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

    PubMed

    Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

    2018-05-09

    The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

  1. Semiconductor quantum wells: old technology or new device functionalities

    NASA Astrophysics Data System (ADS)

    Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.

    2009-08-01

    The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.

  2. Measurement-device-independent entanglement-based quantum key distribution

    NASA Astrophysics Data System (ADS)

    Yang, Xiuqing; Wei, Kejin; Ma, Haiqiang; Sun, Shihai; Liu, Hongwei; Yin, Zhenqiang; Li, Zuohan; Lian, Shibin; Du, Yungang; Wu, Lingan

    2016-05-01

    We present a quantum key distribution protocol in a model in which the legitimate users gather statistics as in the measurement-device-independent entanglement witness to certify the sources and the measurement devices. We show that the task of measurement-device-independent quantum communication can be accomplished based on monogamy of entanglement, and it is fairly loss tolerate including source and detector flaws. We derive a tight bound for collective attacks on the Holevo information between the authorized parties and the eavesdropper. Then with this bound, the final secret key rate with the source flaws can be obtained. The results show that long-distance quantum cryptography over 144 km can be made secure using only standard threshold detectors.

  3. Integrated devices for quantum information and quantum simulation with polarization encoded qubits

    NASA Astrophysics Data System (ADS)

    Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

    2012-06-01

    The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. The technology for handling polarization-encoded qubits, the most commonly adopted approach, was still missing in quantum optical circuits until the ultrafast laser writing (ULW) technique was adopted for the first time to realize integrated devices able to support and manipulate polarization encoded qubits.1 Thanks to this method, polarization dependent and independent devices can be realized. In particular the maintenance of polarization entanglement was demonstrated in a balanced polarization independent integrated beam splitter1 and an integrated CNOT gate for polarization qubits was realized and carachterized.2 We also exploited integrated optics for quantum simulation tasks: by adopting the ULW technique an integrated quantum walk circuit was realized3 and, for the first time, we investigate how the particle statistics, either bosonic or fermionic, influences a two-particle discrete quantum walk. Such experiment has been realized by adopting two-photon entangled states and an array of integrated symmetric directional couplers. The polarization entanglement was exploited to simulate the bunching-antibunching feature of non interacting bosons and fermions. To this scope a novel three-dimensional geometry for the waveguide circuit is introduced, which allows accurate polarization independent behaviour, maintaining a remarkable control on both phase and balancement of the directional couplers.

  4. Theoretical modeling of electronic transport in molecular devices

    NASA Astrophysics Data System (ADS)

    Piccinin, Simone

    In this thesis a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy through inelastic scattering with a heat bath (phonons) acting on the electrons. This method can be regarded as a quantum-mechanical extension of the semi-classical Boltzmann transport equation. We use periodic boundary conditions and employ Density Functional Theory to recast the many-particle problem in an effective single-particle mean-field problem. By explicitly treating the dissipation in the electrodes, the behavior of the potential is an outcome of our method, at variance with the scattering approaches based on the Landauer formalism. We study the self-consistent steady-state solution, analyzing the out-of-equilibrium electron distribution, the electrical characteristics, the behavior of the self-consistent potential and the density of states of the system. We apply the method to the study of electronic transport in several molecular devices, consisting of small organic molecules or atomic wires sandwiched between gold surfaces. For gold wires we recover the experimental evidence that transport in short wires is ballistic, independent of the length of the wire and with conductance of one quantum. In benzene-1,4-dithiol we find that the delocalization of the frontier orbitals of the molecule is responsible for the high value of conductance and that, by inserting methylene groups to decouple the sulfur atoms from the carbon ring, the current is reduced, in agreement with the experimental measurements. We study the effect a geometrical distortion in a molecular device, namely the relative rotation of the carbon rings in a biphenyl-4,4'-dithiol molecule. We find that the reduced coupling between pi orbitals of the rings induced by the rotation leads to a reduction of the conductance and that this behavior is captured by a

  5. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE PAGES

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  6. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    PubMed Central

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-01-01

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

  7. Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

    NASA Astrophysics Data System (ADS)

    Tisdale, William A., III

    Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

  8. Nonlinear electron transport mobility in asymmetric wide quantum well structure

    NASA Astrophysics Data System (ADS)

    Nayak, Rasmita K.; Das, Sudhakar; Panda, Ajit K.; Sahu, Trinath

    2018-05-01

    The nonlinearity of multisubband electron mobility µ in a GaAs/AlxGa1-xAs wide quantum well structure is studied by varying the well width w and doping concentration Nd b (Nd t ) lying in the bottom (top) barrier. The electrons diffuse into the well and accumulate near the interfaces forming two sheets of coupled two dimensional electron gases equivalent to a double quantum well structure. We show that interchange of doping concentrations N db and N dt lead to the enhancement of µ as a function of w as long as N dt > N db , even though the surface electron density remains unaltered. Further, keeping Nd b unchanged, variation of Nd t leads to nonlinearity in µ near the resonance of subband states at Nd t = Nd b at which the subband energy levels exhibit anticrossing. The variation of µ becomes prominent by increasing the well width and resonant doping concentration. The nonlinearity in µ is mostly because of the change in the interface roughness scattering potential through intersubband effects due to the substantial changes in the distributions of the subband wave functions around resonance. Our results of nonmonotonic variation of µ can be utilized for low temperature coupled quantum well devices.

  9. Memory attacks on device-independent quantum cryptography.

    PubMed

    Barrett, Jonathan; Colbeck, Roger; Kent, Adrian

    2013-01-04

    Device-independent quantum cryptographic schemes aim to guarantee security to users based only on the output statistics of any components used, and without the need to verify their internal functionality. Since this would protect users against untrustworthy or incompetent manufacturers, sabotage, or device degradation, this idea has excited much interest, and many device-independent schemes have been proposed. Here we identify a critical weakness of device-independent protocols that rely on public communication between secure laboratories. Untrusted devices may record their inputs and outputs and reveal information about them via publicly discussed outputs during later runs. Reusing devices thus compromises the security of a protocol and risks leaking secret data. Possible defenses include securely destroying or isolating used devices. However, these are costly and often impractical. We propose other more practical partial defenses as well as a new protocol structure for device-independent quantum key distribution that aims to achieve composable security in the case of two parties using a small number of devices to repeatedly share keys with each other (and no other party).

  10. Experimental Measurement-Device-Independent Quantum Key Distribution

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Chen, Teng-Yun; Wang, Liu-Jun; Liang, Hao; Shentu, Guo-Liang; Wang, Jian; Cui, Ke; Yin, Hua-Lei; Liu, Nai-Le; Li, Li; Ma, Xiongfeng; Pelc, Jason S.; Fejer, M. M.; Peng, Cheng-Zhi; Zhang, Qiang; Pan, Jian-Wei

    2013-09-01

    Quantum key distribution is proven to offer unconditional security in communication between two remote users with ideal source and detection. Unfortunately, ideal devices never exist in practice and device imperfections have become the targets of various attacks. By developing up-conversion single-photon detectors with high efficiency and low noise, we faithfully demonstrate the measurement-device-independent quantum-key-distribution protocol, which is immune to all hacking strategies on detection. Meanwhile, we employ the decoy-state method to defend attacks on a nonideal source. By assuming a trusted source scenario, our practical system, which generates more than a 25 kbit secure key over a 50 km fiber link, serves as a stepping stone in the quest for unconditionally secure communications with realistic devices.

  11. Experimental measurement-device-independent quantum key distribution.

    PubMed

    Liu, Yang; Chen, Teng-Yun; Wang, Liu-Jun; Liang, Hao; Shentu, Guo-Liang; Wang, Jian; Cui, Ke; Yin, Hua-Lei; Liu, Nai-Le; Li, Li; Ma, Xiongfeng; Pelc, Jason S; Fejer, M M; Peng, Cheng-Zhi; Zhang, Qiang; Pan, Jian-Wei

    2013-09-27

    Quantum key distribution is proven to offer unconditional security in communication between two remote users with ideal source and detection. Unfortunately, ideal devices never exist in practice and device imperfections have become the targets of various attacks. By developing up-conversion single-photon detectors with high efficiency and low noise, we faithfully demonstrate the measurement-device-independent quantum-key-distribution protocol, which is immune to all hacking strategies on detection. Meanwhile, we employ the decoy-state method to defend attacks on a nonideal source. By assuming a trusted source scenario, our practical system, which generates more than a 25 kbit secure key over a 50 km fiber link, serves as a stepping stone in the quest for unconditionally secure communications with realistic devices.

  12. Quantum dot lasers: From promise to high-performance devices

    NASA Astrophysics Data System (ADS)

    Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

    2009-03-01

    Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

  13. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    with HF in methanol. For example, for 4.5 nm In0.91Ga0.09P nanoparticles in toluene, there is a dramatic increase in PL quantum efficiency from 8...opto-electronic device applications, for which quantum efficiencies above 50% are typically required for commercial cost-effectiveness. For the...InGaP nanocrystals……… 14 Figure 4: 2D double- quantum 31P NMR spectrum, 4.5 nm InGaP nanocrystals………….…… 15 Figure 5: TEM of of 10 nm, 5 nm

  14. Interference Effects in a Tunable Quantum Point Contact Integrated with an Electronic Cavity

    NASA Astrophysics Data System (ADS)

    Yan, Chengyu; Kumar, Sanjeev; Pepper, Michael; See, Patrick; Farrer, Ian; Ritchie, David; Griffiths, Jonathan; Jones, Geraint

    2017-08-01

    We show experimentally how quantum interference can be produced using an integrated quantum system comprising an arch-shaped short quantum wire (or quantum point contact, QPC) of 1D electrons and a reflector forming an electronic cavity. On tuning the coupling between the QPC and the electronic cavity, fine oscillations are observed when the arch QPC is operated in the quasi-1D regime. These oscillations correspond to interference between the 1D states and a state which is similar to the Fabry-Perot state and suppressed by a small transverse magnetic field of ±60 mT . Tuning the reflector, we find a peak in resistance which follows the behavior expected for a Fano resonance. We suggest that this is an interesting example of a Fano resonance in an open system which corresponds to interference at or near the Ohmic contacts due to a directly propagating, reflected discrete path and the continuum states of the cavity corresponding to multiple scattering. Remarkably, the Fano factor shows an oscillatory behavior taking peaks for each fine oscillation, thus, confirming coupling between the discrete and continuum states. The results indicate that such a simple quantum device can be used as building blocks to create more complex integrated quantum circuits for possible applications ranging from quantum-information processing to realizing the fundamentals of complex quantum systems.

  15. Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Ancona, Mario G.; Rafferty, Conor S.; Yu, Zhiping

    2000-01-01

    We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

  16. Transport properties of a quantum dot and a quantum ring in series

    NASA Astrophysics Data System (ADS)

    Seo, Minky; Chung, Yunchul

    2018-01-01

    The decoherence mechanism of an electron interferometer is studied by using a serial quantum dot and ring device. By coupling a quantum dot to a quantum ring (closed-loop electron interferometer), we were able to observe both Coulomb oscillations and Aharonov-Bohm interference simultaneously. The coupled device behaves like an ordinary double quantum dot at zero magnetic field while the conductance of the Coulomb blockade peak is modulated by the electron interference at finite magnetic fields. By injecting one electron at a time (by exploiting the sequential tunneling of a quantum dot) into the interferometer, we were able to study the visibility of the electron interference at non-zero bias voltage. The visibility was found to decay rapidly as the electron energy was increased, which was consistent with the recently reported result for an electron interferometer. However, the lobe pattern and the sudden phase jump became less prominent. These results imply that the lobe pattern and the phase jump in an electron interferometer may be due to electron interactions inside the interferometer, as is predicted by the theory.

  17. Experimental measurement-device-independent verification of quantum steering

    NASA Astrophysics Data System (ADS)

    Kocsis, Sacha; Hall, Michael J. W.; Bennet, Adam J.; Saunders, Dylan J.; Pryde, Geoff J.

    2015-01-01

    Bell non-locality between distant quantum systems—that is, joint correlations which violate a Bell inequality—can be verified without trusting the measurement devices used, nor those performing the measurements. This leads to unconditionally secure protocols for quantum information tasks such as cryptographic key distribution. However, complete verification of Bell non-locality requires high detection efficiencies, and is not robust to typical transmission losses over long distances. In contrast, quantum or Einstein-Podolsky-Rosen steering, a weaker form of quantum correlation, can be verified for arbitrarily low detection efficiencies and high losses. The cost is that current steering-verification protocols require complete trust in one of the measurement devices and its operator, allowing only one-sided secure key distribution. Here we present measurement-device-independent steering protocols that remove this need for trust, even when Bell non-locality is not present. We experimentally demonstrate this principle for singlet states and states that do not violate a Bell inequality.

  18. Experimental measurement-device-independent verification of quantum steering.

    PubMed

    Kocsis, Sacha; Hall, Michael J W; Bennet, Adam J; Saunders, Dylan J; Pryde, Geoff J

    2015-01-07

    Bell non-locality between distant quantum systems--that is, joint correlations which violate a Bell inequality--can be verified without trusting the measurement devices used, nor those performing the measurements. This leads to unconditionally secure protocols for quantum information tasks such as cryptographic key distribution. However, complete verification of Bell non-locality requires high detection efficiencies, and is not robust to typical transmission losses over long distances. In contrast, quantum or Einstein-Podolsky-Rosen steering, a weaker form of quantum correlation, can be verified for arbitrarily low detection efficiencies and high losses. The cost is that current steering-verification protocols require complete trust in one of the measurement devices and its operator, allowing only one-sided secure key distribution. Here we present measurement-device-independent steering protocols that remove this need for trust, even when Bell non-locality is not present. We experimentally demonstrate this principle for singlet states and states that do not violate a Bell inequality.

  19. Measurement-device-independent quantum digital signatures

    NASA Astrophysics Data System (ADS)

    Puthoor, Ittoop Vergheese; Amiri, Ryan; Wallden, Petros; Curty, Marcos; Andersson, Erika

    2016-08-01

    Digital signatures play an important role in software distribution, modern communication, and financial transactions, where it is important to detect forgery and tampering. Signatures are a cryptographic technique for validating the authenticity and integrity of messages, software, or digital documents. The security of currently used classical schemes relies on computational assumptions. Quantum digital signatures (QDS), on the other hand, provide information-theoretic security based on the laws of quantum physics. Recent work on QDS Amiri et al., Phys. Rev. A 93, 032325 (2016);, 10.1103/PhysRevA.93.032325 Yin, Fu, and Zeng-Bing, Phys. Rev. A 93, 032316 (2016), 10.1103/PhysRevA.93.032316 shows that such schemes do not require trusted quantum channels and are unconditionally secure against general coherent attacks. However, in practical QDS, just as in quantum key distribution (QKD), the detectors can be subjected to side-channel attacks, which can make the actual implementations insecure. Motivated by the idea of measurement-device-independent quantum key distribution (MDI-QKD), we present a measurement-device-independent QDS (MDI-QDS) scheme, which is secure against all detector side-channel attacks. Based on the rapid development of practical MDI-QKD, our MDI-QDS protocol could also be experimentally implemented, since it requires a similar experimental setup.

  20. Quantum state reconstruction and photon number statistics for low dimensional semiconductor opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Böhm, Fabian; Grosse, Nicolai B.; Kolarczik, Mirco; Herzog, Bastian; Achtstein, Alexander; Owschimikow, Nina; Woggon, Ulrike

    2017-09-01

    Quantum state tomography and the reconstruction of the photon number distribution are techniques to extract the properties of a light field from measurements of its mean and fluctuations. These techniques are particularly useful when dealing with macroscopic or mesoscopic systems, where a description limited to the second order autocorrelation soon becomes inadequate. In particular, the emission of nonclassical light is expected from mesoscopic quantum dot systems strongly coupled to a cavity or in systems with large optical nonlinearities. We analyze the emission of a quantum dot-semiconductor optical amplifier system by quantifying the modifications of a femtosecond laser pulse propagating through the device. Using a balanced detection scheme in a self-heterodyning setup, we achieve precise measurements of the quadrature components and their fluctuations at the quantum noise limit1. We resolve the photon number distribution and the thermal-to-coherent evolution in the photon statistics of the emission. The interferometric detection achieves a high sensitivity in the few photon limit. From our data, we can also reconstruct the second order autocorrelation function with higher precision and time resolution compared with classical Hanbury Brown-Twiss experiments.

  1. 3D-printed components for quantum devices.

    PubMed

    Saint, R; Evans, W; Zhou, Y; Barrett, T; Fromhold, T M; Saleh, E; Maskery, I; Tuck, C; Wildman, R; Oručević, F; Krüger, P

    2018-05-30

    Recent advances in the preparation, control and measurement of atomic gases have led to new insights into the quantum world and unprecedented metrological sensitivities, e.g. in measuring gravitational forces and magnetic fields. The full potential of applying such capabilities to areas as diverse as biomedical imaging, non-invasive underground mapping, and GPS-free navigation can only be realised with the scalable production of efficient, robust and portable devices. We introduce additive manufacturing as a production technique of quantum device components with unrivalled design freedom and rapid prototyping. This provides a step change in efficiency, compactness and facilitates systems integration. As a demonstrator we present an ultrahigh vacuum compatible ultracold atom source dissipating less than ten milliwatts of electrical power during field generation to produce large samples of cold rubidium gases. This disruptive technology opens the door to drastically improved integrated structures, which will further reduce size and assembly complexity in scalable series manufacture of bespoke portable quantum devices.

  2. Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.

    PubMed

    Aiba, Akira; Demir, Firuz; Kaneko, Satoshi; Fujii, Shintaro; Nishino, Tomoaki; Tsukagoshi, Kazuhito; Saffarzadeh, Alireza; Kirczenow, George; Kiguchi, Manabu

    2017-08-11

    The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

  3. PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

    NASA Astrophysics Data System (ADS)

    Nötzel, Richard

    2009-07-01

    This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

  4. Statistical benchmarking for orthogonal electrostatic quantum dot qubit devices

    NASA Astrophysics Data System (ADS)

    Gamble, John; Frees, Adam; Friesen, Mark; Coppersmith, S. N.

    2014-03-01

    Quantum dots in semiconductor systems have emerged as attractive candidates for the implementation of quantum information processors because of the promise of scalability, manipulability, and integration with existing classical electronics. A limitation in current devices is that the electrostatic gates used for qubit manipulation exhibit strong cross-capacitance, presenting a barrier for practical scale-up. Here, we introduce a statistical framework for making precise the notion of orthogonality. We apply our method to analyze recently implemented designs at the University of Wisconsin-Madison that exhibit much increased orthogonal control than was previously possible. We then use our statistical modeling to future device designs, providing practical guidelines for devices to have robust control properties. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy Nuclear Security Administration under contract DE-AC04-94AL85000. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. This work was supported in part by the Laboratory Directed Research and Development program at Sandia National Laboratories, by ARO (W911NF-12-0607), and by the United States Department of Defense.

  5. Device-independent security of quantum cryptography against collective attacks.

    PubMed

    Acín, Antonio; Brunner, Nicolas; Gisin, Nicolas; Massar, Serge; Pironio, Stefano; Scarani, Valerio

    2007-06-08

    We present the optimal collective attack on a quantum key distribution protocol in the "device-independent" security scenario, where no assumptions are made about the way the quantum key distribution devices work or on what quantum system they operate. Our main result is a tight bound on the Holevo information between one of the authorized parties and the eavesdropper, as a function of the amount of violation of a Bell-type inequality.

  6. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices

    PubMed Central

    Chen, Duan; Wei, Guo-Wei

    2010-01-01

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  7. Electron Tunneling, a Quantum Probe for the Quantum World of Nanotechnology

    ERIC Educational Resources Information Center

    Hipps, K. W.; Scudiero, L.

    2005-01-01

    A quantum-mechanical probe is essential to study the quantum world, which is provided by electron tunneling. A spectroscopic mapping to image the electron-transport pathways on a sub-molecular scale is used.

  8. Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer

    NASA Astrophysics Data System (ADS)

    Sanchez-Yamagishi, Javier D.; Luo, Jason Y.; Young, Andrea F.; Hunt, Benjamin M.; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C.; Jarillo-Herrero, Pablo

    2017-02-01

    Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

  9. Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots

    NASA Astrophysics Data System (ADS)

    Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew

    2011-03-01

    We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

  10. High-rate measurement-device-independent quantum cryptography

    NASA Astrophysics Data System (ADS)

    Pirandola, Stefano; Ottaviani, Carlo; Spedalieri, Gaetana; Weedbrook, Christian; Braunstein, Samuel L.; Lloyd, Seth; Gehring, Tobias; Jacobsen, Christian S.; Andersen, Ulrik L.

    2015-06-01

    Quantum cryptography achieves a formidable task—the remote distribution of secret keys by exploiting the fundamental laws of physics. Quantum cryptography is now headed towards solving the practical problem of constructing scalable and secure quantum networks. A significant step in this direction has been the introduction of measurement-device independence, where the secret key between two parties is established by the measurement of an untrusted relay. Unfortunately, although qubit-implemented protocols can reach long distances, their key rates are typically very low, unsuitable for the demands of a metropolitan network. Here we show, theoretically and experimentally, that a solution can come from the use of continuous-variable systems. We design a coherent-state network protocol able to achieve remarkably high key rates at metropolitan distances, in fact three orders of magnitude higher than those currently achieved. Our protocol could be employed to build high-rate quantum networks where devices securely connect to nearby access points or proxy servers.

  11. Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

    NASA Astrophysics Data System (ADS)

    King, Cameron; Schoenfield, Joshua; Calderón, M. J.; Koiller, Belita; Saraiva, André; Hu, Xuedong; Jiang, Hong-Wen; Friesen, Mark; Coppersmith, S. N.

    Fabricating quantum dots in silicon metal-oxide-semiconductor (MOS) for quantum information processing applications is attractive because of the long spin coherence times in silicon and the potential for leveraging the massive investments that have been made for scaling of the technology for classical electronics. One obstacle that has impeded the development of electrically gated MOS singlet-triplet qubits is the lack of observed spin blockade, where the tunneling of a second electron into a dot is fast when the two-electron state is a singlet and slow when the two-electron state is a triplet, even in samples with large singlet-triplet energy splittings. We show that this is a commonly exhibited problem in MOS double quantum dots, and present evidence that the cause is stray positive charges in the oxide layer inducing accidental dots near the device's active region that allow spin blockade lifting. This work was supported by ARO (W911NF-12-1-0607), NSF (IIA-1132804), the Department of Defense under Contract No. H98230-15-C 0453, ARO (W911NF-14-1-0346), NSF (OISE-1132804), ONR (N00014-15-1-0029), and ARO (W911NF-12-R-0012).

  12. Electron-acoustic solitary waves in dense quantum electron-ion plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Misra, A. P.; Shukla, P. K.; Bhowmik, C.

    2007-08-15

    A quantum hydrodynamic (QHD) model is used to investigate the propagation characteristics of nonlinear electron-acoustic solitary waves (EASWs) in a dense quantum plasma whose constituents are two groups of electrons: one inertial cold electrons and other inertialess hot electrons, and the stationary ions which form the neutralizing background. By using the standard reductive perturbation technique, a Kadomtsev-Petviashvili (KP) equation, which governs the dynamics of EASWs, is derived in both spherical and cylindrical geometry. The effects of cold electrons and the density correlations due to quantum fluctuations on the profiles of the amplitudes and widths of the solitary structures are examinedmore » numerically. The nondimensional parameter {delta}=n{sub c0}/n{sub h0}, which is the equilibrium density ratio of the cold to hot electron component, is shown to play a vital role in the formation of both bright and dark solitons. It is also found that the angular dependence of the physical quantities and the presence of cold electrons in a quantum plasma lead to the coexistence of some new interesting novel solitary structures quite distinctive from the classical ones.« less

  13. Quantum logic gates based on coherent electron transport in quantum wires.

    PubMed

    Bertoni, A; Bordone, P; Brunetti, R; Jacoboni, C; Reggiani, S

    2000-06-19

    It is shown that the universal set of quantum logic gates can be realized using solid-state quantum bits based on coherent electron transport in quantum wires. The elementary quantum bits are realized with a proper design of two quantum wires coupled through a potential barrier. Numerical simulations show that (a) a proper design of the coupling barrier allows one to realize any one-qbit rotation and (b) Coulomb interaction between two qbits of this kind allows the implementation of the CNOT gate. These systems are based on a mature technology and seem to be integrable with conventional electronics.

  14. Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

    NASA Astrophysics Data System (ADS)

    Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

    2018-02-01

    The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

  15. Subterahertz acoustical pumping of electronic charge in a resonant tunneling device.

    PubMed

    Young, E S K; Akimov, A V; Henini, M; Eaves, L; Kent, A J

    2012-06-01

    We demonstrate that controlled subnanosecond bursts of electronic charge can be transferred through a resonant tunneling diode by successive picosecond acoustic pulses. The effect exploits the nonlinear current-voltage characteristics of the device and its asymmetric response to the compressive and tensile components of the strain pulse. This acoustoelectronic pump opens new possibilities for the control of quantum phenomena in nanostructures.

  16. Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

    PubMed

    Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

    2015-05-13

    Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

  17. Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

    PubMed

    Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

    2012-01-01

    Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

  18. Device-independent quantum private query

    NASA Astrophysics Data System (ADS)

    Maitra, Arpita; Paul, Goutam; Roy, Sarbani

    2017-04-01

    In quantum private query (QPQ), a client obtains values corresponding to his or her query only, and nothing else from the server, and the server does not get any information about the queries. V. Giovannetti et al. [Phys. Rev. Lett. 100, 230502 (2008)], 10.1103/PhysRevLett.100.230502 gave the first QPQ protocol and since then quite a few variants and extensions have been proposed. However, none of the existing protocols are device independent; i.e., all of them assume implicitly that the entangled states supplied to the client and the server are of a certain form. In this work, we exploit the idea of a local CHSH game and connect it with the scheme of Y. G. Yang et al. [Quantum Info. Process. 13, 805 (2014)], 10.1007/s11128-013-0692-8 to present the concept of a device-independent QPQ protocol.

  19. Designs for a quantum electron microscope.

    PubMed

    Kruit, P; Hobbs, R G; Kim, C-S; Yang, Y; Manfrinato, V R; Hammer, J; Thomas, S; Weber, P; Klopfer, B; Kohstall, C; Juffmann, T; Kasevich, M A; Hommelhoff, P; Berggren, K K

    2016-05-01

    One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This 'quantum weirdness' could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or "quantum electron microscope". A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

  20. Performance of Continuous Quantum Thermal Devices Indirectly Connected to Environments

    NASA Astrophysics Data System (ADS)

    González, J.; Alonso, Daniel; Palao, José

    2016-04-01

    A general quantum thermodynamics network is composed of thermal devices connected to the environments through quantum wires. The coupling between the devices and the wires may introduce additional decay channels which modify the system performance with respect to the directly-coupled device. We analyze this effect in a quantum three-level device connected to a heat bath or to a work source through a two-level wire. The steady state heat currents are decomposed into the contributions of the set of simple circuits in the graph representing the master equation. Each circuit is associated with a mechanism in the device operation and the system performance can be described by a small number of circuit representatives of those mechanisms. Although in the limit of weak coupling between the device and the wire the new irreversible contributions can become small, they prevent the system from reaching the Carnot efficiency.

  1. Bell nonlocality: a resource for device-independent quantum information protocols

    NASA Astrophysics Data System (ADS)

    Acin, Antonio

    2015-05-01

    Bell nonlocality is not only one of the most fundamental properties of quantum physics, but has also recently acquired the status of an information resource for device-independent quantum information protocols. In the device-independent approach, protocols are designed so that their performance is independent of the internal working of the devices used in the implementation. We discuss all these ideas and argue that device-independent protocols are especially relevant or cryptographic applications, as they are insensitive to hacking attacks exploiting imperfections on the modelling of the devices.

  2. Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

    DOE PAGES

    Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

    2017-08-25

    Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

  3. Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

    Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

  4. Few-electron Qubits in Silicon Quantum Electronic Devices

    DTIC Science & Technology

    2014-09-01

    Jackson. Classical electrodynamics. Wiley, 1999. [60] C. Fasth, A. Fuhrer, L. Samuelson, Vitaly N . Golovach, and Daniel Loss. Phys. Rev. Lett., 98...quantum dots. Among these systems, Si is very promising since it can be isotopically purified to eliminate -1 n ...-tno:>tinn J...,~~~+;..,., f1.,JrJ...1.2]. Taking t he AlGaAs/ GaAs system as an example, the most crucial part of t he heterostructure is t he interface between t he n -type AlGaAs and

  5. Conductance of a quantum wire at low electron density

    NASA Astrophysics Data System (ADS)

    Matveev, Konstantin

    2006-03-01

    We study the transport of electrons through a long quantum wire connecting two bulk leads. As the electron density in the wire is lowered, the Coulomb interactions lead to short-range crystalline ordering of electrons. In this Wigner crystal state the spins of electrons form an antiferromagnetic Heisenberg spin chain with exponentially small exchange coupling J. Inhomogeneity of the electron density due to the coupling of the wire to the leads results in violation of spin-charge separation in the device. As a result the spins affect the conductance of the wire. At zero temperature the low-energy spin excitations propagate freely through the wire, and its conductance remains 2e^2/h. At finite temperature some of the spin excitations are reflected by the wire and contribute to its resistance. Since the energy of the elementary excitations in the spin chain (spinons) cannot exceed πJ/2, the conductance of the wire acquires an exponentially small negative correction δG - (-πJ/2T) at low temperatures T J. At higher temperatures, T J, most of the spin excitations in the leads are reflected by the wire, and the conductance levels off at a new universal value e^2/h. This result is consistent with experimental observations of a mini-plateau of conductance at e^2/h in quantum wires in the absence of magnetic field.

  6. Device physics vis-à-vis fundamental physics in Cold War America: the case of quantum optics.

    PubMed

    Bromberg, Joan Lisa

    2006-06-01

    Historians have convincingly shown the close ties U.S. physicists had with the military during the Cold War and have raised the question of whether this alliance affected the content of physics. Some have asserted that it distorted physics, shifting attention from fundamental problems to devices. Yet the papers of physicists in quantum electronics and quantum optics, fields that have been exemplary for those who hold the distortion thesis, show that the same scientists who worked on military devices simultaneously pursued fundamental and foundational topics. This essay examines one such physicist, Marlan O. Scully, with attention to both his extensive foundational studies and the way in which his applied and basic researches played off each other.

  7. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    PubMed

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  8. Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

    PubMed Central

    Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

    2012-01-01

    Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

  9. Quantum-ring spin interference device tuned by quantum point contacts

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Diago-Cisneros, Leo; Mireles, Francisco

    2013-11-21

    We introduce a spin-interference device that comprises a quantum ring (QR) with three embedded quantum point contacts (QPCs) and study theoretically its spin transport properties in the presence of Rashba spin-orbit interaction. Two of the QPCs conform the lead-to-ring junctions while a third one is placed symmetrically in the upper arm of the QR. Using an appropriate scattering model for the QPCs and the S-matrix scattering approach, we analyze the role of the QPCs on the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations of the QR-device. Exact formulas are obtained for the spin-resolved conductances of the QR-device as a functionmore » of the confinement of the QPCs and the AB/AC phases. Conditions for the appearance of resonances and anti-resonances in the spin-conductance are derived and discussed. We predict very distinctive variations of the QR-conductance oscillations not seen in previous QR proposals. In particular, we find that the interference pattern in the QR can be manipulated to a large extend by varying electrically the lead-to-ring topological parameters. The latter can be used to modulate the AB and AC phases by applying gate voltage only. We have shown also that the conductance oscillations exhibits a crossover to well-defined resonances as the lateral QPC confinement strength is increased, mapping the eigenenergies of the QR. In addition, unique features of the conductance arise by varying the aperture of the upper-arm QPC and the Rashba spin-orbit coupling. Our results may be of relevance for promising spin-orbitronics devices based on quantum interference mechanisms.« less

  10. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

    NASA Astrophysics Data System (ADS)

    Samanta, Arup; Muruganathan, Manoharan; Hori, Masahiro; Ono, Yukinori; Mizuta, Hiroshi; Tabe, Michiharu; Moraru, Daniel

    2017-02-01

    Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for functionality at the atomic level with one-by-one control of electrons. However, single-electron effects in donor-atom devices have only been observed at low temperatures mainly due to the low tunnel barriers. If a few donor-atoms are closely coupled as a molecule to form a quantum dot, the ground-state energy level is significantly deepened, leading to higher tunnel barriers. Here, we demonstrate that such an a-few-donor quantum dot, formed by selective conventional doping of phosphorus (P) donors in a Si nano-channel, sustains Coulomb blockade behavior even at room temperature. In this work, such a quantum dot is formed by 3 P-donors located near the center of the selectively-doped area, which is consistent with a statistical analysis. This finding demonstrates practical conditions for atomic- and molecular-level electronics based on donor-atoms in silicon nanodevices.

  11. Attosecond electron pulse trains and quantum state reconstruction in ultrafast transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Priebe, Katharina E.; Rathje, Christopher; Yalunin, Sergey V.; Hohage, Thorsten; Feist, Armin; Schäfer, Sascha; Ropers, Claus

    2017-12-01

    Ultrafast electron and X-ray imaging and spectroscopy are the basis for an ongoing revolution in the understanding of dynamical atomic-scale processes in matter. The underlying technology relies heavily on laser science for the generation and characterization of ever shorter pulses. Recent findings suggest that ultrafast electron microscopy with attosecond-structured wavefunctions may be feasible. However, such future technologies call for means to both prepare and fully analyse the corresponding free-electron quantum states. Here, we introduce a framework for the preparation, coherent manipulation and characterization of free-electron quantum states, experimentally demonstrating attosecond electron pulse trains. Phase-locked optical fields coherently control the electron wavefunction along the beam direction. We establish a new variant of quantum state tomography—`SQUIRRELS'—for free-electron ensembles. The ability to tailor and quantitatively map electron quantum states will promote the nanoscale study of electron-matter entanglement and new forms of ultrafast electron microscopy down to the attosecond regime.

  12. Transport electron through a quantum wire by side-attached asymmetric quantum-dot rings

    NASA Astrophysics Data System (ADS)

    Rostami, A.; Zabihi, S.; Rasooli S., H.; Seyyedi, S. K.

    2011-12-01

    The electronic conductance at zero temperature through a quantum wire with side-attached asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Anderson tunneling Hamiltonian method. We show that the asymmetric configuration of QD- scatter system strongly impresses the amplitude and spectrum of quantum wire nanostructure transmission characteristics. It is shown that whenever the balanced number of quantum dots in two rings is substituted by unbalanced scheme, the number of forbidden mini-bands in quantum wire conductance increases and QW-nanostructure electronic conductance contains rich spectral properties due to appearance of the new anti-resonance and resonance points in spectrum. Considering the suitable gap between nano-rings can strengthen the amplitude of new resonant peaks in the QW conductance spectrum. The proposed asymmetric quantum ring scatter system idea in this paper opens a new insight on designing quantum wire nano structure for given electronic conductance.

  13. CdSe quantum dot sensitized solar cells. Shuttling electrons through stacked carbon nanocups.

    PubMed

    Farrow, Blake; Kamat, Prashant V

    2009-08-12

    The charge separation between excited CdSe semiconductor quantum dots and stacked-cup carbon nanotubes (SCCNTs) has been successfully tapped to generate photocurrent in a quantum dot sensitized solar cell (QDSC). By employing an electrophoretic deposition technique we have cast SCCNT-CdSe composite films on optically transparent electrodes (OTEs). The quenching of CdSe emission, as well as transient absorption measurements, confirms ultrafast electron transfer to SCCNTs. The rate constant for electron transfer increases from 9.51 x 10(9) s(-1) to 7.04 x 10(10) s(-1) as we decrease the size of CdSe nanoparticles from 4.5 to 3 nm. The ability of SCCNTs to collect and transport electrons from excited CdSe has been established from photocurrent measurements. The morphological and excited state properties of SCCNT-CdSe composites demonstrate their usefulness in energy conversion devices.

  14. Predicting the valley physics of silicon quantum dots directly from a device layout

    NASA Astrophysics Data System (ADS)

    Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Bacewski, Andrew D.; Nielsen, Erik; Montaño, Inès; Rudolph, Martin; Carroll, Malcolm S.; Muller, Richard P.

    Qubits made from electrostatically-defined quantum dots in Si-based systems are excellent candidates for quantum information processing applications. However, the multi-valley structure of silicon's band structure provides additional challenges for the few-electron physics critical to qubit manipulation. Here, we present a theory for valley physics that is predictive, in that we take as input the real physical device geometry and experimental voltage operation schedule, and with minimal approximation compute the resulting valley physics. We present both effective mass theory and atomistic tight-binding calculations for two distinct metal-oxide-semiconductor (MOS) quantum dot systems, directly comparing them to experimental measurements of the valley splitting. We conclude by assessing these detailed simulations' utility for engineering desired valley physics in future devices. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program.

  15. Electron-electron interaction in Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

    2012-07-01

    The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

  16. Rigidity of quantum steering and one-sided device-independent verifiable quantum computation

    NASA Astrophysics Data System (ADS)

    Gheorghiu, Alexandru; Wallden, Petros; Kashefi, Elham

    2017-02-01

    The relationship between correlations and entanglement has played a major role in understanding quantum theory since the work of Einstein et al (1935 Phys. Rev. 47 777-80). Tsirelson proved that Bell states, shared among two parties, when measured suitably, achieve the maximum non-local correlations allowed by quantum mechanics (Cirel’son 1980 Lett. Math. Phys. 4 93-100). Conversely, Reichardt et al showed that observing the maximal correlation value over a sequence of repeated measurements, implies that the underlying quantum state is close to a tensor product of maximally entangled states and, moreover, that it is measured according to an ideal strategy (Reichardt et al 2013 Nature 496 456-60). However, this strong rigidity result comes at a high price, requiring a large number of entangled pairs to be tested. In this paper, we present a significant improvement in terms of the overhead by instead considering quantum steering where the device of the one side is trusted. We first demonstrate a robust one-sided device-independent version of self-testing, which characterises the shared state and measurement operators of two parties up to a certain bound. We show that this bound is optimal up to constant factors and we generalise the results for the most general attacks. This leads us to a rigidity theorem for maximal steering correlations. As a key application we give a one-sided device-independent protocol for verifiable delegated quantum computation, and compare it to other existing protocols, to highlight the cost of trust assumptions. Finally, we show that under reasonable assumptions, the states shared in order to run a certain type of verification protocol must be unitarily equivalent to perfect Bell states.

  17. Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

    PubMed

    Klett, Robin; Schönle, Joachim; Becker, Andreas; Dyck, Denis; Borisov, Kiril; Rott, Karsten; Ramermann, Daniela; Büker, Björn; Haskenhoff, Jan; Krieft, Jan; Hübner, Torsten; Reimer, Oliver; Shekhar, Chandra; Schmalhorst, Jan-Michael; Hütten, Andreas; Felser, Claudia; Wernsdorfer, Wolfgang; Reiss, Günter

    2018-02-14

    Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

  18. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    PubMed

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  19. Readout of the atomtronic quantum interference device

    NASA Astrophysics Data System (ADS)

    Haug, Tobias; Tan, Joel; Theng, Mark; Dumke, Rainer; Kwek, Leong-Chuan; Amico, Luigi

    2018-01-01

    A Bose-Einstein condensate confined in ring shaped lattices interrupted by a weak link and pierced by an effective magnetic flux defines the atomic counterpart of the superconducting quantum interference device: the atomtronic quantum interference device (AQUID). In this paper, we report on the detection of current states in the system through a self-heterodyne protocol. Following the original proposal of the NIST and Paris groups, the ring-condensate many-body wave function interferes with a reference condensate expanding from the center of the ring. We focus on the rf AQUID which realizes effective qubit dynamics. Both the Bose-Hubbard and Gross-Pitaevskii dynamics are studied. For the Bose-Hubbard dynamics, we demonstrate that the self-heterodyne protocol can be applied, but higher-order correlations in the evolution of the interfering condensates are measured to readout of the current states of the system. We study how states with macroscopic quantum coherence can be told apart analyzing the noise in the time of flight of the ring condensate.

  20. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    NASA Astrophysics Data System (ADS)

    Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

    2018-02-01

    A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  1. Nuclear quantum effects in electronically adiabatic quantum time correlation functions: Application to the absorption spectrum of a hydrated electron

    NASA Astrophysics Data System (ADS)

    Turi, László; Hantal, György; Rossky, Peter J.; Borgis, Daniel

    2009-07-01

    A general formalism for introducing nuclear quantum effects in the expression of the quantum time correlation function of an operator in a multilevel electronic system is presented in the adiabatic limit. The final formula includes the nuclear quantum time correlation functions of the operator matrix elements, of the energy gap, and their cross terms. These quantities can be inferred and evaluated from their classical analogs obtained by mixed quantum-classical molecular dynamics simulations. The formalism is applied to the absorption spectrum of a hydrated electron, expressed in terms of the time correlation function of the dipole operator in the ground electronic state. We find that both static and dynamic nuclear quantum effects distinctly influence the shape of the absorption spectrum, especially its high energy tail related to transitions to delocalized electron states. Their inclusion does improve significantly the agreement between theory and experiment for both the low and high frequency edges of the spectrum. It does not appear sufficient, however, to resolve persistent deviations in the slow Lorentzian-like decay part of the spectrum in the intermediate 2-3 eV region.

  2. Density-Gradient Theory: A Macroscopic Approach to Quantum Confinement and Tunneling in Semiconductor Devices

    DTIC Science & Technology

    2011-01-01

    that are attractive as luminescent biolabels, and possibly also for optoelectronic devices and solar cells . The equilibrium nature of such situations...The boundary layers as- sociated with the diffusion and Debye lengths are familiar, while that of LQ defines the layer in which the quantum in...circuits, transmission lines Diffusion -drift, density-gradient Semi-classical electron dynamics, Boltzmann transport Schrödinger, density- matrix, Wigner

  3. Plug-and-play measurement-device-independent quantum key distribution

    NASA Astrophysics Data System (ADS)

    Choi, Yujun; Kwon, Osung; Woo, Minki; Oh, Kyunghwan; Han, Sang-Wook; Kim, Yong-Su; Moon, Sung

    2016-03-01

    Quantum key distribution (QKD) guarantees unconditional communication security based on the laws of quantum physics. However, practical QKD suffers from a number of quantum hackings due to the device imperfections. From the security standpoint, measurement-device-independent quantum key distribution (MDI-QKD) is in the limelight since it eliminates all the possible loopholes in detection. Due to active control units for mode matching between the photons from remote parties, however, the implementation of MDI-QKD is highly impractical. In this paper, we propose a method to resolve the mode matching problem while minimizing the use of active control units. By introducing the plug-and-play (P&P) concept into MDI-QKD, the indistinguishability in spectral and polarization modes between photons can naturally be guaranteed. We show the feasibility of P&P MDI-QKD with a proof-of-principle experiment.

  4. Negative exchange interactions in coupled few-electron quantum dots

    NASA Astrophysics Data System (ADS)

    Deng, Kuangyin; Calderon-Vargas, F. A.; Mayhall, Nicholas J.; Barnes, Edwin

    2018-06-01

    It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin tripletlike rather than singletlike ground state. Here we show using a microscopic model based on the configuration interaction (CI) method that both tripletlike and singletlike ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that tripletlike ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons.

  5. Electron Dynamics in Finite Quantum Systems

    NASA Astrophysics Data System (ADS)

    McDonald, Christopher R.

    The multiconfiguration time-dependent Hartree-Fock (MCTDHF) and multiconfiguration time-dependent Hartree (MCTDH) methods are employed to investigate nonperturbative multielectron dynamics in finite quantum systems. MCTDHF is a powerful tool that allows for the investigation of multielectron dynamics in strongly perturbed quantum systems. We have developed an MCTDHF code that is capable of treating problems involving three dimensional (3D) atoms and molecules exposed to strong laser fields. This code will allow for the theoretical treatment of multielectron phenomena in attosecond science that were previously inaccessible. These problems include complex ionization processes in pump-probe experiments on noble gas atoms, the nonlinear effects that have been observed in Ne atoms in the presence of an x-ray free-electron laser (XFEL) and the molecular rearrangement of cations after ionization. An implementation of MCTDH that is optimized for two electrons, each moving in two dimensions (2D), is also presented. This implementation of MCTDH allows for the efficient treatment of 2D spin-free systems involving two electrons; however, it does not scale well to 3D or to systems containing more that two electrons. Both MCTDHF and MCTDH were used to treat 2D problems in nanophysics and attosecond science. MCTDHF is used to investigate plasmon dynamics and the quantum breathing mode for several electrons in finite lateral quantum dots. MCTDHF is also used to study the effects of manipulating the potential of a double lateral quantum dot containing two electrons; applications to quantum computing are discussed. MCTDH is used to examine a diatomic model molecular system exposed to a strong laser field; nonsequential double ionization and high harmonic generation are studied and new processes identified and explained. An implementation of MCTDHF is developed for nonuniform tensor product grids; this will allow for the full 3D implementation of MCTDHF and will provide a means to

  6. Nano-Bio Quantum Technology for Device-Specific Materials

    NASA Technical Reports Server (NTRS)

    Choi, Sang H.

    2009-01-01

    The areas discussed are still under development: I. Nano structured materials for TE applications a) SiGe and Be.Te; b) Nano particles and nanoshells. II. Quantum technology for optical devices: a) Quantum apertures; b) Smart optical materials; c) Micro spectrometer. III. Bio-template oriented materials: a) Bionanobattery; b) Bio-fuel cells; c) Energetic materials.

  7. Electronic security device

    DOEpatents

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  8. Electronic security device

    DOEpatents

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  9. Security analysis on some experimental quantum key distribution systems with imperfect optical and electrical devices

    NASA Astrophysics Data System (ADS)

    Liang, Lin-Mei; Sun, Shi-Hai; Jiang, Mu-Sheng; Li, Chun-Yan

    2014-10-01

    In general, quantum key distribution (QKD) has been proved unconditionally secure for perfect devices due to quantum uncertainty principle, quantum noncloning theorem and quantum nondividing principle which means that a quantum cannot be divided further. However, the practical optical and electrical devices used in the system are imperfect, which can be exploited by the eavesdropper to partially or totally spy the secret key between the legitimate parties. In this article, we first briefly review the recent work on quantum hacking on some experimental QKD systems with respect to imperfect devices carried out internationally, then we will present our recent hacking works in details, including passive faraday mirror attack, partially random phase attack, wavelength-selected photon-number-splitting attack, frequency shift attack, and single-photon-detector attack. Those quantum attack reminds people to improve the security existed in practical QKD systems due to imperfect devices by simply adding countermeasure or adopting a totally different protocol such as measurement-device independent protocol to avoid quantum hacking on the imperfection of measurement devices [Lo, et al., Phys. Rev. Lett., 2012, 108: 130503].

  10. Measurement device-independent quantum dialogue

    NASA Astrophysics Data System (ADS)

    Maitra, Arpita

    2017-12-01

    Very recently, the experimental demonstration of quantum secure direct communication (QSDC) with state-of-the-art atomic quantum memory has been reported (Zhang et al. in Phys Rev Lett 118:220501, 2017). Quantum dialogue (QD) falls under QSDC where the secrete messages are communicated simultaneously between two legitimate parties. The successful experimental demonstration of QSDC opens up the possibilities for practical implementation of QD protocols. Thus, it is necessary to analyze the practical security issues of QD protocols for future implementation. Since the very first proposal for QD by Nguyen (Phys Lett A 328:6-10, 2004), a large number of variants and extensions have been presented till date. However, all of those leak half of the secret bits to the adversary through classical communications of the measurement results. In this direction, motivated by the idea of Lo et al. (Phys Rev Lett 108:130503, 2012), we propose a measurement device-independent quantum dialogue scheme which is resistant to such information leakage as well as side-channel attacks. In the proposed protocol, Alice and Bob, two legitimate parties, are allowed to prepare the states only. The states are measured by an untrusted third party who may himself behave as an adversary. We show that our protocol is secure under this adversarial model. The current protocol does not require any quantum memory, and thus, it is inherently robust against memory attacks. Such robustness might not be guaranteed in the QSDC protocol with quantum memory (Zhang et al. 2017).

  11. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  12. Quantum tunneling resonant electron transfer process in Lorentzian plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hong, Woo-Pyo; Jung, Young-Dae, E-mail: ydjung@hanyang.ac.kr; Department of Applied Physics and Department of Bionanotechnology, Hanyang University, Ansan, Kyunggi-Do 426-791

    The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunnelingmore » resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed.« less

  13. Characterizing quantum supremacy in near-term devices

    NASA Astrophysics Data System (ADS)

    Boixo, Sergio; Isakov, Sergei V.; Smelyanskiy, Vadim N.; Babbush, Ryan; Ding, Nan; Jiang, Zhang; Bremner, Michael J.; Martinis, John M.; Neven, Hartmut

    2018-06-01

    A critical question for quantum computing in the near future is whether quantum devices without error correction can perform a well-defined computational task beyond the capabilities of supercomputers. Such a demonstration of what is referred to as quantum supremacy requires a reliable evaluation of the resources required to solve tasks with classical approaches. Here, we propose the task of sampling from the output distribution of random quantum circuits as a demonstration of quantum supremacy. We extend previous results in computational complexity to argue that this sampling task must take exponential time in a classical computer. We introduce cross-entropy benchmarking to obtain the experimental fidelity of complex multiqubit dynamics. This can be estimated and extrapolated to give a success metric for a quantum supremacy demonstration. We study the computational cost of relevant classical algorithms and conclude that quantum supremacy can be achieved with circuits in a two-dimensional lattice of 7 × 7 qubits and around 40 clock cycles. This requires an error rate of around 0.5% for two-qubit gates (0.05% for one-qubit gates), and it would demonstrate the basic building blocks for a fault-tolerant quantum computer.

  14. Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

    NASA Astrophysics Data System (ADS)

    Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri; Abanin, Dmitry A.; Levitov, Leonid S.; Kim, Philip

    2007-10-01

    We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

  15. All-solution-processed, multilayered CuInS₂/ZnS colloidal quantum-dot-based electroluminescent device.

    PubMed

    Kim, Jong-Hoon; Yang, Heesun

    2014-09-01

    While significant progress of electroluminescent (EL) quantum dot light-emitting diodes (QD-LEDs) that rely exclusively on Cd-containing II-VI quantum dots (QDs) has been reported over the past two decades with respect to device processing and performance, devices based on non-Cd QDs as an active emissive layer (EML) remain at the early stage of development. In this work, utilizing highly luminescent colloidal CuInS2 (CIS)/ZnS QDs, all-solution-processed multilayered QD-LEDs are fabricated by sequentially spin depositing a hole transport layer of poly(9-vinlycarbazole), an EML of CIS/ZnS QDs, and an electron transport layer of ZnO nanoparticles. Our focus in device fabrication is to vary the thickness of the QD EML, which is one of the primary determinants in EL performance but has not been addressed in earlier reports. The device with an optimal EML thickness exhibits a peak luminance of 1564  cd/m2 and current efficiency of 2.52  cd/A. This record value in efficiency is higher by 3-4 times that of CIS QD-LEDs reported previously.

  16. QmeQ 1.0: An open-source Python package for calculations of transport through quantum dot devices

    NASA Astrophysics Data System (ADS)

    Kiršanskas, Gediminas; Pedersen, Jonas Nyvold; Karlström, Olov; Leijnse, Martin; Wacker, Andreas

    2017-12-01

    QmeQ is an open-source Python package for numerical modeling of transport through quantum dot devices with strong electron-electron interactions using various approximate master equation approaches. The package provides a framework for calculating stationary particle or energy currents driven by differences in chemical potentials or temperatures between the leads which are tunnel coupled to the quantum dots. The electronic structures of the quantum dots are described by their single-particle states and the Coulomb matrix elements between the states. When transport is treated perturbatively to lowest order in the tunneling couplings, the possible approaches are Pauli (classical), first-order Redfield, and first-order von Neumann master equations, and a particular form of the Lindblad equation. When all processes involving two-particle excitations in the leads are of interest, the second-order von Neumann approach can be applied. All these approaches are implemented in QmeQ. We here give an overview of the basic structure of the package, give examples of transport calculations, and outline the range of applicability of the different approximate approaches.

  17. Quantum coherent optical phase modulation in an ultrafast transmission electron microscope.

    PubMed

    Feist, Armin; Echternkamp, Katharina E; Schauss, Jakob; Yalunin, Sergey V; Schäfer, Sascha; Ropers, Claus

    2015-05-14

    Coherent manipulation of quantum systems with light is expected to be a cornerstone of future information and communication technology, including quantum computation and cryptography. The transfer of an optical phase onto a quantum wavefunction is a defining aspect of coherent interactions and forms the basis of quantum state preparation, synchronization and metrology. Light-phase-modulated electron states near atoms and molecules are essential for the techniques of attosecond science, including the generation of extreme-ultraviolet pulses and orbital tomography. In contrast, the quantum-coherent phase-modulation of energetic free-electron beams has not been demonstrated, although it promises direct access to ultrafast imaging and spectroscopy with tailored electron pulses on the attosecond scale. Here we demonstrate the coherent quantum state manipulation of free-electron populations in an electron microscope beam. We employ the interaction of ultrashort electron pulses with optical near-fields to induce Rabi oscillations in the populations of electron momentum states, observed as a function of the optical driving field. Excellent agreement with the scaling of an equal-Rabi multilevel quantum ladder is obtained, representing the observation of a light-driven 'quantum walk' coherently reshaping electron density in momentum space. We note that, after the interaction, the optically generated superposition of momentum states evolves into a train of attosecond electron pulses. Our results reveal the potential of quantum control for the precision structuring of electron densities, with possible applications ranging from ultrafast electron spectroscopy and microscopy to accelerator science and free-electron lasers.

  18. Quantum coherent optical phase modulation in an ultrafast transmission electron microscope

    NASA Astrophysics Data System (ADS)

    Feist, Armin; Echternkamp, Katharina E.; Schauss, Jakob; Yalunin, Sergey V.; Schäfer, Sascha; Ropers, Claus

    2015-05-01

    Coherent manipulation of quantum systems with light is expected to be a cornerstone of future information and communication technology, including quantum computation and cryptography. The transfer of an optical phase onto a quantum wavefunction is a defining aspect of coherent interactions and forms the basis of quantum state preparation, synchronization and metrology. Light-phase-modulated electron states near atoms and molecules are essential for the techniques of attosecond science, including the generation of extreme-ultraviolet pulses and orbital tomography. In contrast, the quantum-coherent phase-modulation of energetic free-electron beams has not been demonstrated, although it promises direct access to ultrafast imaging and spectroscopy with tailored electron pulses on the attosecond scale. Here we demonstrate the coherent quantum state manipulation of free-electron populations in an electron microscope beam. We employ the interaction of ultrashort electron pulses with optical near-fields to induce Rabi oscillations in the populations of electron momentum states, observed as a function of the optical driving field. Excellent agreement with the scaling of an equal-Rabi multilevel quantum ladder is obtained, representing the observation of a light-driven `quantum walk' coherently reshaping electron density in momentum space. We note that, after the interaction, the optically generated superposition of momentum states evolves into a train of attosecond electron pulses. Our results reveal the potential of quantum control for the precision structuring of electron densities, with possible applications ranging from ultrafast electron spectroscopy and microscopy to accelerator science and free-electron lasers.

  19. Long-distance measurement-device-independent multiparty quantum communication.

    PubMed

    Fu, Yao; Yin, Hua-Lei; Chen, Teng-Yun; Chen, Zeng-Bing

    2015-03-06

    The Greenberger-Horne-Zeilinger (GHZ) entanglement, originally introduced to uncover the extreme violation of local realism against quantum mechanics, is an important resource for multiparty quantum communication tasks. But the low intensity and fragility of the GHZ entanglement source in current conditions have made the practical applications of these multiparty tasks an experimental challenge. Here we propose a feasible scheme for practically distributing the postselected GHZ entanglement over a distance of more than 100 km for experimentally accessible parameter regimes. Combining the decoy-state and measurement-device-independent protocols for quantum key distribution, we anticipate that our proposal suggests an important avenue for practical multiparty quantum communication.

  20. Superfluid helium quantum interference devices: physics and applications.

    PubMed

    Sato, Y; Packard, R E

    2012-01-01

    We present an overview of recent developments related to superfluid helium quantum interference devices (SHeQUIDs). We discuss the physics of two reservoirs of superfluid helium coupled together and describe the quantum oscillations that result from varying the coupling strength. We explain the principles behind SHeQUIDs that can be built based on these oscillations and review some techniques and applications.

  1. Two-dimensional Electronic Double-Quantum Coherence Spectroscopy

    PubMed Central

    Kim, Jeongho; Mukamel, Shaul

    2009-01-01

    CONSPECTUS The theory of electronic structure of many-electron systems like molecules is extraordinarily complicated. A lot can be learned by considering how electron density is distributed, on average, in the average field of the other electrons in the system. That is, mean field theory. However, to describe quantitatively chemical bonds, reactions, and spectroscopy requires consideration of the way that electrons avoid each other by the way they move; this is called electron correlation (or in physics, the many-body problem for fermions). While great progress has been made in theory, there is a need for incisive experimental tests that can be undertaken for large molecular systems in the condensed phase. Here we report a two-dimensional (2D) optical coherent spectroscopy that correlates the double excited electronic states to constituent single excited states. The technique, termed two-dimensional double-coherence spectroscopy (2D-DQCS), makes use of multiple, time-ordered ultrashort coherent optical pulses to create double- and single-quantum coherences over time intervals between the pulses. The resulting two-dimensional electronic spectrum maps the energy correlation between the first excited state and two-photon allowed double-quantum states. The principle of the experiment is that when the energy of the double-quantum state, viewed in simple models as a double HOMO to LUMO excitation, equals twice that of a single excitation, then no signal is radiated. However, electron-electron interactions—a combination of exchange interactions and electron correlation—in real systems generates a signal that reveals precisely how the energy of the double-quantum resonance differs from twice the single-quantum resonance. The energy shift measured in this experiment reveals how the second excitation is perturbed by both the presence of the first excitation and the way that the other electrons in the system have responded to the presence of that first excitation. We

  2. Quantum Device Applications of Mesoscopic Superconductivity

    NASA Astrophysics Data System (ADS)

    Hakonen, P. J.

    2006-08-01

    A brief account is given on the possibilities of mesoscopic superconductivity in low-noise amplifier and detector applications. In particular, three devices will be described: 1) Bloch oscillating transistor (BOT), 2) Inductively-read superconducting Cooper pair transistor (L-SET), and 3) Quantum capacitive phase detector (C-SET). The BOT is a low-noise current amplifier while the L-SET and C-SET act as ultra-sensitive charge and phase detectors, respectively. The basic operating principles and the main characteristics of these devices will be reviewed and discussed.

  3. Measurement-device-independent quantum communication with an untrusted source

    NASA Astrophysics Data System (ADS)

    Xu, Feihu

    2015-07-01

    Measurement-device-independent quantum key distribution (MDI-QKD) can provide enhanced security compared to traditional QKD, and it constitutes an important framework for a quantum network with an untrusted network server. Still, a key assumption in MDI-QKD is that the sources are trusted. We propose here a MDI quantum network with a single untrusted source. We have derived a complete proof of the unconditional security of MDI-QKD with an untrusted source. Using simulations, we have considered various real-life imperfections in its implementation, and the simulation results show that MDI-QKD with an untrusted source provides a key generation rate that is close to the rate of initial MDI-QKD in the asymptotic setting. Our work proves the feasibility of the realization of a quantum network. The network users need only low-cost modulation devices, and they can share both an expensive detector and a complicated laser provided by an untrusted network server.

  4. Measurement-device-independent quantum cryptography

    DOE PAGES

    Xu, Feihu; Curty, Marcos; Qi, Bing; ...

    2014-12-18

    In theory, quantum key distribution (QKD) provides information-theoretic security based on the laws of physics. Owing to the imperfections of real-life implementations, however, there is a big gap between the theory and practice of QKD, which has been recently exploited by several quantum hacking activities. To fill this gap, a novel approach, called measurement-device-independent QKD (mdiQKD), has been proposed. In addition, it can remove all side-channels from the measurement unit, arguably the most vulnerable part in QKD systems, thus offering a clear avenue toward secure QKD realisations. In this study, we review the latest developments in the framework of mdiQKD,more » together with its assumptions, strengths, and weaknesses.« less

  5. Mini array of quantum Hall devices based on epitaxial graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed thatmore » the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.« less

  6. A Strategy to Enhance the Efficiency of Quantum Dot-Sensitized Solar Cells by Decreasing Electron Recombination with Polyoxometalate/TiO2 as the Electronic Interface Layer.

    PubMed

    Chen, Li; Chen, Weilin; Li, Jianping; Wang, Jiabo; Wang, Enbo

    2017-07-21

    Electron recombination occurring at the TiO 2 /quantum dot sensitizer/electrolyte interface is the key reason for hindering further efficiency improvements to quantum dot sensitized solar cells (QDSCs). Polyoxometalate (POM) can act as an electron-transfer medium to decrease electron recombination in a photoelectric device owing to its excellent oxidation/reduction properties and thermostability. A POM/TiO 2 electronic interface layer prepared by a simple layer-by-layer self-assembly method was added between fluorine-doped tin oxide (FTO) and mesoporous TiO 2 in the photoanode of QDSCs, and the effect on the photovoltaic performance was systematically investigated. Photovoltaic experimental results and the electron transmission mechanism show that the POM/TiO 2 electronic interface layer in the QDSCs can clearly suppress electron recombination, increase the electron lifetime, and result in smoother electron transmission. In summary, the best conversion efficiency of QDSCs with POM/TiO 2 electronic interface layers increases to 8.02 %, which is an improvement of 25.1 % compared with QDSCs without POM/TiO 2 . This work first builds an electron-transfer bridge between FTO and the quantum dot sensitizer and paves the way for further improved efficiency of QDSCs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Implementing two optimal economical quantum cloning with superconducting quantum interference devices in a cavity

    NASA Astrophysics Data System (ADS)

    Ye, Liu; Hu, GuiYu; Li, AiXia

    2011-01-01

    We propose a unified scheme to implement the optimal 1 → 3 economical phase-covariant quantum cloning and optimal 1 → 3 economical real state cloning with superconducting quantum interference devices (SQUIDs) in a cavity. During this process, no transfer of quantum information between the SQUIDs and cavity is required. The cavity field is only virtually excited. The scheme is insensitive to cavity decay. Therefore, the scheme can be experimentally realized in the range of current cavity QED techniques.

  8. Integration of micro-/nano-/quantum-scale photonic devices: scientific and technological considerations

    NASA Astrophysics Data System (ADS)

    Lee, El-Hang; Lee, Seung-Gol; O, Beom Hoan; Park, Se Geun

    2004-08-01

    Scientific and technological issues and considerations regarding the integration of miniaturized microphotonic devices, circuits and systems in micron, submicron, and quantum scale, are presented. First, we examine the issues regarding the miniaturization of photonic devices including the size effect, proximity effect, energy confinement effect, microcavity effect, optical and quantum interference effect, high field effect, nonlinear effect, noise effect, quantum optical effect, and chaotic effect. Secondly, we examine the issues regarding the interconnection including the optical alignment, minimizing the interconnection losses, and maintaining optical modes. Thirdly, we address the issues regarding the two-dimensional or three-dimensional integration either in a hybrid format or in a monolithic format between active devices and passive devices of varying functions. We find that the concept of optical printed circuit board (O-PCB) that we propose is highly attractive as a platform for micro/nano/quantum-scale photonic integration. We examine the technological issues to be addressed in the process of fabrication, characterization, and packaging for actual implementation of the miniaturization, interconnection and integration. Devices that we have used for our study include: mode conversion schemes, micro-ring and micro-racetrack resonator devices, multimode interference devices, lasers, vertical cavity surface emitting microlasers, and their arrays. Future prospects are also discussed.

  9. Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

    NASA Astrophysics Data System (ADS)

    Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

    2018-05-01

    In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

  10. Disabling CNT Electronic Devices by Use of Electron Beams

    NASA Technical Reports Server (NTRS)

    Petkov, Mihail

    2008-01-01

    Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide

  11. Indication for quantum Darwinism in electron billiards

    NASA Astrophysics Data System (ADS)

    Brunner, R.; Akis, R.; Meisels, R.; Kuchar, F.; Ferry, D. K.

    2010-02-01

    In this paper, we investigate the dynamics in electron billiards by using classical and quantum mechanical calculations. We report on the existence of pointer states in single-dot and double-dot electron billiards. Additionally, we show that the two types of pointer states have the propensity to create offspring, i.e. they can be observed in the individual modes propagating between the external reservoirs. This can be understood as an indication that quantum Darwinism is present in the electron billiards.

  12. Electron spin relaxation in a transition-metal dichalcogenide quantum dot

    NASA Astrophysics Data System (ADS)

    Pearce, Alexander J.; Burkard, Guido

    2017-06-01

    We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for quantum dot nano-structures due to the combination of a band gap, spin-valley physics and strong spin-orbit coupling. First we will discuss which bound state solutions in different B-field regimes can be used as the basis for qubits states. We find that at low B-fields combined spin-valley Kramers qubits to be suitable, while at large magnetic fields pure spin or valley qubits can be envisioned. Then we present a discussion of the relaxation of a single electron spin mediated by electron-phonon interaction via various different relaxation channels. In the low B-field regime we consider the spin-valley Kramers qubits and include impurity mediated valley mixing which will arise in disordered quantum dots. Rashba spin-orbit admixture mechanisms allow for relaxation by in-plane phonons either via the deformation potential or by piezoelectric coupling, additionally direct spin-phonon mechanisms involving out-of-plane phonons give rise to relaxation. We find that the relaxation rates scale as \\propto B 6 for both in-plane phonons coupling via deformation potential and the piezoelectric effect, while relaxation due to the direct spin-phonon coupling scales independant to B-field to lowest order but depends strongly on device mechanical tension. We will also discuss the relaxation mechanisms for pure spin or valley qubits formed in the large B-field regime.

  13. Device-independent tests of quantum channels

    NASA Astrophysics Data System (ADS)

    Dall'Arno, Michele; Brandsen, Sarah; Buscemi, Francesco

    2017-03-01

    We develop a device-independent framework for testing quantum channels. That is, we falsify a hypothesis about a quantum channel based only on an observed set of input-output correlations. Formally, the problem consists of characterizing the set of input-output correlations compatible with any arbitrary given quantum channel. For binary (i.e. two input symbols, two output symbols) correlations, we show that extremal correlations are always achieved by orthogonal encodings and measurements, irrespective of whether or not the channel preserves commutativity. We further provide a full, closed-form characterization of the sets of binary correlations in the case of: (i) any dihedrally covariant qubit channel (such as any Pauli and amplitude-damping channels) and (ii) any universally-covariant commutativity-preserving channel in an arbitrary dimension (such as any erasure, depolarizing, universal cloning and universal transposition channels).

  14. Device-independent tests of quantum channels.

    PubMed

    Dall'Arno, Michele; Brandsen, Sarah; Buscemi, Francesco

    2017-03-01

    We develop a device-independent framework for testing quantum channels. That is, we falsify a hypothesis about a quantum channel based only on an observed set of input-output correlations. Formally, the problem consists of characterizing the set of input-output correlations compatible with any arbitrary given quantum channel. For binary (i.e. two input symbols, two output symbols) correlations, we show that extremal correlations are always achieved by orthogonal encodings and measurements, irrespective of whether or not the channel preserves commutativity. We further provide a full, closed-form characterization of the sets of binary correlations in the case of: (i) any dihedrally covariant qubit channel (such as any Pauli and amplitude-damping channels) and (ii) any universally-covariant commutativity-preserving channel in an arbitrary dimension (such as any erasure, depolarizing, universal cloning and universal transposition channels).

  15. Insecurity of Detector-Device-Independent Quantum Key Distribution.

    PubMed

    Sajeed, Shihan; Huang, Anqi; Sun, Shihai; Xu, Feihu; Makarov, Vadim; Curty, Marcos

    2016-12-16

    Detector-device-independent quantum key distribution (DDI-QKD) held the promise of being robust to detector side channels, a major security loophole in quantum key distribution (QKD) implementations. In contrast to what has been claimed, however, we demonstrate that the security of DDI-QKD is not based on postselected entanglement, and we introduce various eavesdropping strategies that show that DDI-QKD is in fact insecure against detector side-channel attacks as well as against other attacks that exploit devices' imperfections of the receiver. Our attacks are valid even when the QKD apparatuses are built by the legitimate users of the system themselves, and thus, free of malicious modifications, which is a key assumption in DDI-QKD.

  16. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

    NASA Astrophysics Data System (ADS)

    Schopfer, F.; Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.

    Large-area and high-quality graphene devices synthesized by CVD on SiC are used to develop reliable electrical resistance standards, based on the quantum Hall effect (QHE), with state-of-the-art accuracy of 1x10-9 and under an extended range of experimental conditions of magnetic field (down to 3.5 T), temperature (up to 10 K) or current (up to 0.5 mA). These conditions are much relaxed as compared to what is required by GaAs/AlGaAs standards and will enable to broaden the use of the primary quantum electrical standards to the benefit of Science and Industry for electrical measurements. Furthermore, by comparison of these graphene devices with GaAs/AlGaAs standards, we demonstrate the universality of the QHE within an ultimate uncertainty of 8.2x10-11. This suggests the exact relation of the quantized Hall resistance with the Planck constant and the electron charge, which is crucial for the new SI to be based on fixing such fundamental constants. These results show that graphene realizes its promises and demonstrates its superiority over other materials for a demanding application. Nature Nanotech. 10, 965-971, 2015, Nature Commun. 6, 6806, 2015

  17. Strain-Engineering of Graphene Based Topological Quantum Devices

    NASA Astrophysics Data System (ADS)

    Diniz, Ginetom S.; Guassi, Marcos R.; Qu, Fanyao

    2015-03-01

    We have investigated the spin-charge transport in quantum devices based on graphene nanoribbons (GNR). Our calculation is based on the surface Green's function technique, considering the presence of an uniform uniaxial strain, spin-orbit interactions (SOIs), exchange field and a smooth staggered potential. We propose the use of uniaxial strain as an efficient mechanism to tune the conductance profiles of GNR with different edge terminations. Our results show that distinct behaviors can be achieved: for armchair GNR there is a complete suppression of the conductance close to the Fermi level with the formation of a band gap that depends on the direction and strength of the strain deformation, while for zigzag GNR there is only a small conductance suppression. We also discuss the effects of SOIs and the appearance of spin-resolved conductance oscillations, and the local density of states of these GNR devices in the quantum anomalous Hall regime. Furthermore, we demonstrate that the local density of states show that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be probed by scanning tunneling microscope. Our findings can be potentially used in novel GNR based topological quantum devices. Supported by FAP-DF, CNPq and CAPES.

  18. Electronic properties of novel topological quantum materials studied by angle-resolved photoemission spectroscopy (ARPES)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Yun

    The discovery of quantum Hall e ect has motivated the use of topology instead of broken symmetry to classify the states of matter. Quantum spin Hall e ect has been proposed to have a separation of spin currents as an analogue of the charge currents separation in quantum Hall e ect, leading us to the era of topological insulators. Three-dimensional analogue of the Dirac state in graphene has brought us the three-dimensional Dirac states. Materials with three-dimensional Dirac states could potentially be the parent compounds for Weyl semimetals and topological insulators when time-reversal or space inversion symmetry is broken. Inmore » addition to the single Dirac point linking the two dispersion cones in the Dirac/Weyl semimetals, Dirac points can form a line in the momentum space, resulting in a topological node line semimetal. These fascinating novel topological quantum materials could provide us platforms for studying the relativistic physics in condensed matter systems and potentially lead to design of new electronic devices that run faster and consume less power than traditional, silicon based transistors. In this thesis, we present the electronic properties of novel topological quantum materials studied by angle-resolved photoemission spectroscopy (ARPES).« less

  19. Electron transport in nano-scaled piezoelectronic devices

    NASA Astrophysics Data System (ADS)

    Jiang, Zhengping; Kuroda, Marcelo A.; Tan, Yaohua; Newns, Dennis M.; Povolotskyi, Michael; Boykin, Timothy B.; Kubis, Tillmann; Klimeck, Gerhard; Martyna, Glenn J.

    2013-05-01

    The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via the expansion of a relaxor piezoelectric element to turn the device on. The mixed-valence compound SmSe is a good choice of PET channel material because of its isostructural pressure-induced continuous metal insulator transition, which is well characterized in bulk single crystals. Prediction and optimization of the performance of a realistic, nano-scaled PET based on SmSe requires the understanding of quantum confinement, tunneling, and the effect of metal interface. In this work, a computationally efficient empirical tight binding (ETB) model is developed for SmSe to study quantum transport in these systems and the scaling limit of PET channel lengths. Modulation of the SmSe band gap under pressure is successfully captured by ETB, and ballistic conductance shows orders of magnitude change under hydrostatic strain, supporting operability of the PET device at nanoscale.

  20. Distribution of tunnelling times for quantum electron transport.

    PubMed

    Rudge, Samuel L; Kosov, Daniel S

    2016-03-28

    In electron transport, the tunnelling time is the time taken for an electron to tunnel out of a system after it has tunnelled in. We define the tunnelling time distribution for quantum processes in a dissipative environment and develop a practical approach for calculating it, where the environment is described by the general Markovian master equation. We illustrate the theory by using the rate equation to compute the tunnelling time distribution for electron transport through a molecular junction. The tunnelling time distribution is exponential, which indicates that Markovian quantum tunnelling is a Poissonian statistical process. The tunnelling time distribution is used not only to study the quantum statistics of tunnelling along the average electric current but also to analyse extreme quantum events where an electron jumps against the applied voltage bias. The average tunnelling time shows distinctly different temperature dependence for p- and n-type molecular junctions and therefore provides a sensitive tool to probe the alignment of molecular orbitals relative to the electrode Fermi energy.

  1. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    DOE PAGES

    Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

    2016-12-20

    “Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

  2. Quantum switching of π-electron rotations in a nonplanar chiral molecule by using linearly polarized UV laser pulses.

    PubMed

    Mineo, Hirobumi; Yamaki, Masahiro; Teranishi, Yoshiaki; Hayashi, Michitoshi; Lin, Sheng Hsien; Fujimura, Yuichi

    2012-09-05

    Nonplanar chiral aromatic molecules are candidates for use as building blocks of multidimensional switching devices because the π electrons can generate ring currents with a variety of directions. We employed (P)-2,2'-biphenol because four patterns of π-electron rotations along the two phenol rings are possible and theoretically determine how quantum switching of the π-electron rotations can be realized. We found that each rotational pattern can be driven by a coherent excitation of two electronic states under two conditions: one is the symmetry of the electronic states and the other is their relative phase. On the basis of the results of quantum dynamics simulations, we propose a quantum control method for sequential switching among the four rotational patterns that can be performed by using ultrashort overlapped pump and dump pulses with properly selected relative phases and photon polarization directions. The results serve as a theoretical basis for the design of confined ultrafast switching of ring currents of nonplanar molecules and further current-induced magnetic fluxes of more sophisticated systems.

  3. Completely device-independent quantum key distribution

    NASA Astrophysics Data System (ADS)

    Aguilar, Edgar A.; Ramanathan, Ravishankar; Kofler, Johannes; Pawłowski, Marcin

    2016-08-01

    Quantum key distribution (QKD) is a provably secure way for two distant parties to establish a common secret key, which then can be used in a classical cryptographic scheme. Using quantum entanglement, one can reduce the necessary assumptions that the parties have to make about their devices, giving rise to device-independent QKD (DIQKD). However, in all existing protocols to date the parties need to have an initial (at least partially) random seed as a resource. In this work, we show that this requirement can be dropped. Using recent advances in the fields of randomness amplification and randomness expansion, we demonstrate that it is sufficient for the message the parties want to communicate to be (partially) unknown to the adversaries—an assumption without which any type of cryptography would be pointless to begin with. One party can use her secret message to locally generate a secret sequence of bits, which can then be openly used by herself and the other party in a DIQKD protocol. Hence our work reduces the requirements needed to perform secure DIQKD and establish safe communication.

  4. Single electron probes of fractional quantum hall states

    NASA Astrophysics Data System (ADS)

    Venkatachalam, Vivek

    When electrons are confined to a two dimensional layer with a perpendicular applied magnetic field, such that the ratio of electrons to flux quanta (nu) is a small integer or simple rational value, these electrons condense into remarkable new phases of matter that are strikingly different from the metallic electron gas that exists in the absence of a magnetic field. These phases, called integer or fractional quantum Hall (IQH or FQH) states, appear to be conventional insulators in their bulk, but behave as a dissipationless metal along their edge. Furthermore, electrical measurements of such a system are largely insensitive to the detailed geometry of how the system is contacted or even how large the system is... only the order in which contacts are made appears to matter. This insensitivity to local geometry has since appeared in a number of other two and three dimensional systems, earning them the classification of "topological insulators" and prompting an enormous experimental and theoretical effort to understand their properties and perhaps manipulate these properties to create robust quantum information processors. The focus of this thesis will be two experiments designed to elucidate remarkable properties of the metallic edge and insulating bulk of certain FQH systems. To study such systems, we can use mesoscopic devices known as single electron transistors (SETs). These devices operate by watching single electrons hop into and out of a confining box and into a nearby wire (for measurement). If it is initially unfavorable for an electron to leave the box, it can be made favorable by bringing another charge nearby, modifying the energy of the confined electron and pushing it out of the box and into the nearby wire. In this way, the SET can measure nearby charges. Alternatively, we can heat up the nearby wire to make it easier for electrons to enter and leave the box. In this way, the SET is a sensitive thermometer. First, by operating the SET as an

  5. Basic concepts of quantum interference and electron transport in single-molecule electronics.

    PubMed

    Lambert, C J

    2015-02-21

    This tutorial outlines the basic theoretical concepts and tools which underpin the fundamentals of phase-coherent electron transport through single molecules. The key quantity of interest is the transmission coefficient T(E), which yields the electrical conductance, current-voltage relations, the thermopower S and the thermoelectric figure of merit ZT of single-molecule devices. Since T(E) is strongly affected by quantum interference (QI), three manifestations of QI in single-molecules are discussed, namely Mach-Zehnder interferometry, Breit-Wigner resonances and Fano resonances. A simple MATLAB code is provided, which allows the novice reader to explore QI in multi-branched structures described by a tight-binding (Hückel) Hamiltonian. More generally, the strengths and limitations of materials-specific transport modelling based on density functional theory are discussed.

  6. Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

    PubMed

    Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

    2018-06-19

    We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

  7. Physics of lateral triple quantum-dot molecules with controlled electron numbers.

    PubMed

    Hsieh, Chang-Yu; Shim, Yun-Pil; Korkusinski, Marek; Hawrylak, Pawel

    2012-11-01

    We review the recent progress in theory and experiments with lateral triple quantum dots with controlled electron numbers down to one electron in each dot. The theory covers electronic and spin properties as a function of topology, number of electrons, gate voltage and external magnetic field. The orbital Hund's rules and Nagaoka ferromagnetism, magnetic frustration and chirality, interplay of quantum interference and electron-electron interactions and geometrical phases are described and related to charging and transport spectroscopy. Fabrication techniques and recent experiments are covered, as well as potential applications of triple quantum-dot molecule in coherent control, spin manipulation and quantum computation.

  8. The role of surface ligands in quantum-dot devices: Villain or unsung hero?

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pietryga, Jeffrey Michael

    For over three decades, the study of nanocrystal quantum dots (QDs), which are solution-synthesized nanometer-scale bits of semiconductor materials, has produced singular advances in both our understanding of quantum confinement effects, and in our ability to make use of them in tech-relevant materials. Accordingly, QDs have found their way into the marketplace, specifically as high-performance fluorophores for, e.g., displays and biolabeling. In such applications, optimization of the QD surface, including the passivating ligands, is key to keeping photo-excited carriers from leaving the QD interior before recombining, resulting in a high fluorescence efficiency. Increasingly, attention has turned to realize the promisemore » of QDs for optoelectronic applications (e.g., solar cells, LEDs, sensors) which require charge carriers to controllably enter, exit and/or travel through QDs, a much more challenging problem. In this scenario, the role of the QD surface must be completely reimagined, from being an impenetrable wall to being a gateway, or even a ramp. In this talk, I’ll explore the inherent contrast between QD fluorophore and device applications, and describe how ligands, originally thought only to be impediments to QD electronic devices, may actually give the savvy QD device designer control over function and performance in a manner unknown in bulk semiconductor devices. Finally, I’ll survey recent efforts at Los Alamos to develop a universal tool box for deposition of conductive QD films that may finally allow the manufacturing of economical, high-performance devices for a wide range of applications.« less

  9. Finite-key analysis for measurement-device-independent quantum key distribution.

    PubMed

    Curty, Marcos; Xu, Feihu; Cui, Wei; Lim, Charles Ci Wen; Tamaki, Kiyoshi; Lo, Hoi-Kwong

    2014-04-29

    Quantum key distribution promises unconditionally secure communications. However, as practical devices tend to deviate from their specifications, the security of some practical systems is no longer valid. In particular, an adversary can exploit imperfect detectors to learn a large part of the secret key, even though the security proof claims otherwise. Recently, a practical approach--measurement-device-independent quantum key distribution--has been proposed to solve this problem. However, so far its security has only been fully proven under the assumption that the legitimate users of the system have unlimited resources. Here we fill this gap and provide a rigorous security proof against general attacks in the finite-key regime. This is obtained by applying large deviation theory, specifically the Chernoff bound, to perform parameter estimation. For the first time we demonstrate the feasibility of long-distance implementations of measurement-device-independent quantum key distribution within a reasonable time frame of signal transmission.

  10. Inverted organic electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Small, Cephas E.

    The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8

  11. Electrical control of single hole spins in nanowire quantum dots.

    PubMed

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  12. Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

    PubMed

    Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

    2017-11-01

    By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

  13. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    PubMed

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  14. Study of a prototype high quantum efficiency thick scintillation crystal video-electronic portal imaging device.

    PubMed

    Samant, Sanjiv S; Gopal, Arun

    2006-08-01

    Image quality in portal imaging suffers significantly from the loss in contrast and spatial resolution that results from the excessive Compton scatter associated with megavoltage x rays. In addition, portal image quality is further reduced due to the poor quantum efficiency (QE) of current electronic portal imaging devices (EPIDs). Commercial video-camera-based EPIDs or VEPIDs that utilize a thin phosphor screen in conjunction with a metal buildup plate to convert the incident x rays to light suffer from reduced light production due to low QE (<2% for Eastman Kodak Lanex Fast-B). Flat-panel EPIDs that utilize the same luminescent screen along with an a-Si:H photodiode array provide improved image quality compared to VEPIDs, but they are expensive and can be susceptible to radiation damage to the peripheral electronics. In this article, we present a prototype VEPID system for high quality portal imaging at sub-monitor-unit (subMU) exposures based on a thick scintillation crystal (TSC) that acts as a high QE luminescent screen. The prototype TSC system utilizes a 12 mm thick transparent CsI(Tl) (thallium-activated cesium iodide) scintillator for QE=0.24, resulting in significantly higher light production compared to commercial phosphor screens. The 25 X 25 cm2 CsI(Tl) screen is coupled to a high spatial and contrast resolution Video-Optics plumbicon-tube camera system (1240 X 1024 pixels, 250 microm pixel width at isocenter, 12-bit ADC). As a proof-of-principle prototype, the TSC system with user-controlled camera target integration was adapted for use in an existing clinical gantry (Siemens BEAMVIEW(PLUS)) with the capability for online intratreatment fluoroscopy. Measurements of modulation transfer function (MTF) were conducted to characterize the TSC spatial resolution. The measured MTF along with measurements of the TSC noise power spectrum (NPS) were used to determine the system detective quantum efficiency (DQE). A theoretical expression of DQE(0) was developed

  15. Housing Electrons: Relating Quantum Numbers, Energy Levels, and Electron Configurations.

    ERIC Educational Resources Information Center

    Garofalo, Anthony

    1997-01-01

    Presents an activity that combines the concepts of quantum numbers and probability locations, energy levels, and electron configurations in a concrete, hands-on way. Uses model houses constructed out of foam board and colored beads to represent electrons. (JRH)

  16. Practical characterization of quantum devices without tomography

    NASA Astrophysics Data System (ADS)

    Landon-Cardinal, Olivier; Flammia, Steven; Silva, Marcus; Liu, Yi-Kai; Poulin, David

    2012-02-01

    Quantum tomography is the main method used to assess the quality of quantum information processing devices, but its complexity presents a major obstacle for the characterization of even moderately large systems. Part of the reason for this complexity is that tomography generates much more information than is usually sought. Taking a more targeted approach, we develop schemes that enable (i) estimating the ?delity of an experiment to a theoretical ideal description, (ii) learning which description within a reduced subset best matches the experimental data. Both these approaches yield a signi?cant reduction in resources compared to tomography. In particular, we show how to estimate the ?delity between a predicted pure state and an arbitrary experimental state using only a constant number of Pauli expectation values selected at random according to an importance-weighting rule. In addition, we propose methods for certifying quantum circuits and learning continuous-time quantum dynamics that are described by local Hamiltonians or Lindbladians.

  17. Experimental measurement-device-independent quantum digital signatures.

    PubMed

    Roberts, G L; Lucamarini, M; Yuan, Z L; Dynes, J F; Comandar, L C; Sharpe, A W; Shields, A J; Curty, M; Puthoor, I V; Andersson, E

    2017-10-23

    The development of quantum networks will be paramount towards practical and secure telecommunications. These networks will need to sign and distribute information between many parties with information-theoretic security, requiring both quantum digital signatures (QDS) and quantum key distribution (QKD). Here, we introduce and experimentally realise a quantum network architecture, where the nodes are fully connected using a minimum amount of physical links. The central node of the network can act either as a totally untrusted relay, connecting the end users via the recently introduced measurement-device-independent (MDI)-QKD, or as a trusted recipient directly communicating with the end users via QKD. Using this network, we perform a proof-of-principle demonstration of QDS mediated by MDI-QKD. For that, we devised an efficient protocol to distil multiple signatures from the same block of data, thus reducing the statistical fluctuations in the sample and greatly enhancing the final QDS rate in the finite-size scenario.

  18. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

    1998-01-01

    A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

  19. Realizing a partial general quantum cloning machine with superconducting quantum-interference devices in a cavity QED

    NASA Astrophysics Data System (ADS)

    Fang, Bao-Long; Yang, Zhen; Ye, Liu

    2009-05-01

    We propose a scheme for implementing a partial general quantum cloning machine with superconducting quantum-interference devices coupled to a nonresonant cavity. By regulating the time parameters, our system can perform optimal symmetric (asymmetric) universal quantum cloning, optimal symmetric (asymmetric) phase-covariant cloning, and optimal symmetric economical phase-covariant cloning. In the scheme the cavity is only virtually excited, thus, the cavity decay is suppressed during the cloning operations.

  20. Measurement-device-independent quantum coin tossing

    NASA Astrophysics Data System (ADS)

    Zhao, Liangyuan; Yin, Zhenqiang; Wang, Shuang; Chen, Wei; Chen, Hua; Guo, Guangcan; Han, Zhengfu

    2015-12-01

    Quantum coin tossing (QCT) is an important primitive of quantum cryptography and has received continuous interest. However, in practical QCT, Bob's detectors can be subjected to detector-side channel attacks launched by dishonest Alice, which will possibly make the protocol completely insecure. Here, we report a simple strategy of a detector-blinding attack based on a recent experiment. To remove all the detector side channels, we present a solution of measurement-device-independent QCT (MDI-QCT). This method is similar to the idea of MDI quantum key distribution (QKD). MDI-QCT is loss tolerant with single-photon sources and has the same bias as the original loss-tolerant QCT under a coherent attack. Moreover, it provides the potential advantage of doubling the secure distance for some special cases. Finally, MDI-QCT can also be modified to fit the weak coherent-state sources. Thus, based on the rapid development of practical MDI-QKD, our proposal can be implemented easily.

  1. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

    1998-08-25

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

  2. Quantum-circuit refrigerator

    NASA Astrophysics Data System (ADS)

    Tan, Kuan Yen; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Masuda, Shumpei; Möttönen, Mikko

    2017-05-01

    Quantum technology promises revolutionizing applications in information processing, communications, sensing and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains challenging in many solid-state implementations, such as superconducting circuits. Here we demonstrate direct cooling of a superconducting resonator mode using voltage-controllable electron tunnelling in a nanoscale refrigerator. This result is revealed by a decreased electron temperature at a resonator-coupled probe resistor, even for an elevated electron temperature at the refrigerator. Our conclusions are verified by control experiments and by a good quantitative agreement between theory and experimental observations at various operation voltages and bath temperatures. In the future, we aim to remove spurious dissipation introduced by our refrigerator and to decrease the operational temperature. Such an ideal quantum-circuit refrigerator has potential applications in the initialization of quantum electric devices. In the superconducting quantum computer, for example, fast and accurate reset of the quantum memory is needed.

  3. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this part...

  4. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this part...

  5. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this part...

  6. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this part...

  7. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this part...

  8. Chaotic electron transport in semiconductor devices

    NASA Astrophysics Data System (ADS)

    Scannell, William Christian

    The field of quantum chaos investigates the quantum mechanical behavior of classically chaotic systems. This dissertation begins by describing an experiment conducted on an apparatus constructed to represent a three dimensional analog of a classically chaotic system. Patterns of reflected light are shown to produce fractals, and the behavior of the fractal dimension D F is shown to depend on the light's ability to escape the apparatus. The classically chaotic system is then used to investigate the conductance properties of semiconductor heterostructures engineered to produce a conducting plane relatively free of impurities and defects. Introducing walls that inhibit conduction to partition off sections considerably smaller than the mean distance between impurities defines devices called 'billiards'. Cooling to low temperatures enables the electrons traveling through the billiard to maintain quantum mechanical phase. Exposure to a changing electric or magnetic field alters the electron's phase, leading to fluctuations in the conductance through the billiard. Magnetoconductance fluctuations in billiards have previously been shown to be fractal. This behavior has been charted using an empirical parameter, Q, that is a measure of the resolution of the energy levels within the billiard. The relationship with Q is shown to extend beyond the ballistic regime into the 'quasi-ballistic' and 'diffusive' regimes, characterized by having defects within the conduction plane. A model analogous to the classically chaotic system is proposed as the origin of the fractal conductance fluctuations. This model is shown to be consistent with experiment and to account for changes of fine scale features in MCF known to occur when a billiard is brought to room temperature between low temperature measurements. An experiment is conducted in which fractal conductance fluctuations (FCF) are produced by exposing a billiard to a changing electric field. Comparison of DF values of FCF produced by

  9. Influence of scattering processes on electron quantum states in nanowires

    PubMed Central

    Galenchik, Vadim; Borzdov, Andrei; Borzdov, Vladimir; Komarov, Fadei

    2007-01-01

    In the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisional broadening and the quantum correlations between scattering events to be taken into account. It is an alternativeper seto the Fock approximation for the self-energy approach based on Green’s function formalism. However this approach is free of mathematical difficulties typical to the Fock approximation. Moreover, the developed method is simpler than the Fock approximation from the computational point of view. Using the approximation of stable one-particle quantum states it is proved that the electron scattering processes determine the dependence of electron energy versus its wave vector.

  10. Solar cells using quantum funnels.

    PubMed

    Kramer, Illan J; Levina, Larissa; Debnath, Ratan; Zhitomirsky, David; Sargent, Edward H

    2011-09-14

    Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems.

  11. Thermodynamic limits to the efficiency of solar energy conversion by quantum devices

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.; Smith, B. T.

    1981-01-01

    The second law of thermodynamics imposes a strict limitation to the energy converted from direct solar radiation to useful work by a quantum device. This limitation requires that the amount of energy converted to useful work (energy in any form other than heat) can be no greater than the change in free energy of the radiation fields. Futhermore, in any real energy conversion device, not all of this available free energy in the radiation field can be converted to work because of basic limitations inherent in the device itself. A thermodynamic analysis of solar energy conversion by a completely general prototypical quantum device is presented. This device is completely described by two parameters, its operating temperature T sub R and the energy threshold of its absorption spectrum. An expression for the maximum thermodynamic efficiency of a quantum solar converter was derived in terms of these two parameters and the incident radiation spectrum. Efficiency curves for assumed solar spectral irradiance corresponding to air mass zero and air mass 1.5 are presented.

  12. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of this...

  13. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of this...

  14. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of this...

  15. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of this...

  16. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this part...

  17. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  18. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this part...

  19. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  20. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  1. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  2. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this part...

  3. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this part...

  4. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of this...

  5. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this part...

  6. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  7. Symmetry breaking by quantum coherence in single electron attachment

    NASA Astrophysics Data System (ADS)

    Krishnakumar, E.; Prabhudesai, Vaibhav S.; Mason, Nigel J.

    2018-02-01

    Quantum coherence-induced effects in atomic and molecular systems are the basis of several proposals for laser-based control of chemical reactions. So far, these rely on coherent photon beams inducing coherent reaction pathways that may interfere with one another, to achieve the desired outcome. This concept has been successfully exploited for removing the inversion symmetry in the dissociation of homonuclear diatomic molecules, but it remains to be seen if such quantum coherent effects can also be generated by the interaction of incoherent electrons with such molecules. Here we show that resonant electron attachment to H2 and the subsequent dissociation into H (n = 2) + H- is asymmetric about the inter-nuclear axis, whereas the asymmetry in D2 is far less pronounced. We explain this observation as due to attachment of a single electron resulting in a coherent superposition of two resonances of opposite parity. In addition to exemplifying a new quantum coherent process, our observation of coherent quantum dynamics involves the active participation of all three electrons and two nuclei, which could provide new tools for studying electron correlations as a means to control chemical processes, and demonstrates the role of coherent effects in electron-induced chemistry.

  8. In situ intercalation strategies for device-quality hybrid inorganic-organic self-assembled quantum wells

    NASA Astrophysics Data System (ADS)

    Pradeesh, K.; Baumberg, J. J.; Prakash, G. Vijaya

    2009-07-01

    Thin films of self-organized quantum wells of inorganic-organic hybrid perovskites of (C6H9C2H4NH3)2PbI4 are formed from a simple intercalation strategy to yield well-ordered uniform films over centimeter-size scales. These films compare favorably with traditional solution-chemistry-synthesized thin films. The hybrid films show strong room-temperature exciton-related absorption and photoluminescence, which shift with fabrication protocol. We demonstrate the potential of this method for electronic and photonic device applications.

  9. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

    NASA Astrophysics Data System (ADS)

    Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

    2014-11-01

    The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

  10. Dimension-dependent stimulated radiative interaction of a single electron quantum wavepacket

    NASA Astrophysics Data System (ADS)

    Gover, Avraham; Pan, Yiming

    2018-06-01

    In the foundation of quantum mechanics, the spatial dimensions of electron wavepacket are understood only in terms of an expectation value - the probability distribution of the particle location. One can still inquire how the quantum electron wavepacket size affects a physical process. Here we address the fundamental physics problem of particle-wave duality and the measurability of a free electron quantum wavepacket. Our analysis of stimulated radiative interaction of an electron wavepacket, accompanied by numerical computations, reveals two limits. In the quantum regime of long wavepacket size relative to radiation wavelength, one obtains only quantum-recoil multiphoton sidebands in the electron energy spectrum. In the opposite regime, the wavepacket interaction approaches the limit of classical point-particle acceleration. The wavepacket features can be revealed in experiments carried out in the intermediate regime of wavepacket size commensurate with the radiation wavelength.

  11. Electron-exchange and quantum screening effects on the Thomson scattering process in quantum Fermi plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Gyeong Won; Jung, Young-Dae; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180-3590

    2013-06-15

    The influence of the electron-exchange and quantum screening on the Thomson scattering process is investigated in degenerate quantum Fermi plasmas. The Thomson scattering cross section in quantum plasmas is obtained by the plasma dielectric function and fluctuation-dissipation theorem as a function of the electron-exchange parameter, Fermi energy, plasmon energy, and wave number. It is shown that the electron-exchange effect enhances the Thomson scattering cross section in quantum plasmas. It is also shown that the differential Thomson scattering cross section has a minimum at the scattering angle Θ=π/2. It is also found that the Thomson scattering cross section increases with anmore » increase of the Fermi energy. In addition, the Thomson scattering cross section is found to be decreased with increasing plasmon energy.« less

  12. Nonreciprocal quantum interactions and devices via autonomous feedforward

    NASA Astrophysics Data System (ADS)

    Metelmann, A.; Clerk, A. A.

    2017-01-01

    In a recent work [A. Metelmann and A. A. Clerk, Phys. Rev. X 5, 021025 (2015), 10.1103/PhysRevX.5.021025], a general reservoir engineering approach for generating nonreciprocal quantum interactions and devices was described. We show here how in many cases this general recipe can be viewed as an example of autonomous feedforward: the full dissipative evolution is identical to the unconditional evolution in a setup where an observer performs an ideal quantum measurement of one system, and then uses the results to drive a second system. We also extend the application of this approach to nonreciprocal quantum amplifiers, showing the added functionality possible when using two engineered reservoirs. In particular, we demonstrate how to construct an ideal phase-preserving cavity-based amplifier which is fully nonreciprocal, quantum limited, and free of any fundamental gain-bandwidth constraint.

  13. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration

    NASA Astrophysics Data System (ADS)

    Kondo, A.; Yin, G.; Srinivasan, N.; Atarashi, D.; Sakai, E.; Miyauchi, M.

    2015-07-01

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells

  14. Electron-Nuclear Quantum Information Processing

    DTIC Science & Technology

    2008-11-13

    quantum information processing that exploits the anisotropic hyperfine coupling. This scheme enables universal control over a 1-electron, N-nuclear spin...exploits the anisotropic hyperfine coupling. This scheme enables universal control over a 1-electron, N-nuclear spin system, addressing only a...sample of irradiated malonic acid. (a) Papers published in peer-reviewed journals (N/A for none) Universal control of nuclear spins via anisotropic

  15. Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

    NASA Astrophysics Data System (ADS)

    He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

    2017-08-01

    Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

  16. Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Youssef, Sarah; El-Batawy, Yasser M.; Abouelsaood, Ahmed A.

    2016-09-01

    A theoretical method for calculating the electron mobility in quantum dot infrared photodetectors is developed. The mobility calculation is based on a time-dependent, finite-difference solution of the Boltzmann transport equation in a bulk semiconductor material with randomly positioned conical quantum dots. The quantum dots act as scatterers of current carriers (conduction-band electrons in our case), resulting in limiting their mobility. In fact, carrier scattering by quantum dots is typically the dominant factor in determining the mobility in the active region of the quantum dot device. The calculated values of the mobility are used in a recently developed generalized drift-diffusion model for the dark current of the device [Ameen et al., J. Appl. Phys. 115, 063703 (2014)] in order to fix the overall current scale. The results of the model are verified by comparing the predicted dark current characteristics to those experimentally measured and reported for actual InAs/GaAs quantum dot infrared photodetectors. Finally, the effect of the several relevant device parameters, including the operating temperature and the quantum dot average density, is studied.

  17. Influences of Quantum Mechanically Mixed Electronic and Vibrational Pigment States in 2D Electronic Spectra of Photosynthetic Systems: Strong Electronic Coupling Cases

    DOE PAGES

    Fujihashi, Yuta; Fleming, Graham R.; Ishizaki, Akihito

    2015-09-07

    In 2D electronic spectroscopy studies, long-lived quantum beats have recently been observed in photosynthetic systems, and several theoretical studies have suggested that the beats are produced by quantum mechanically mixed electronic and vibrational states. Concerning the electronic-vibrational quantum mixtures, the impact of protein-induced fluctuations was examined by calculating the 2D electronic spectra of a weakly coupled dimer with the Franck-Condon active vibrational modes in the resonant condition. This analysis demonstrated that quantum mixtures of the vibronic resonance are rather robust under the influence of the fluctuations at cryogenic temperatures, whereas the mixtures are eradicated by the fluctuations at physiological temperatures.more » However, this conclusion cannot be generalized because the magnitude of the coupling inducing the quantum mixtures is proportional to the inter-pigment electronic coupling. In this paper, we explore the impact of the fluctuations on electronic-vibrational quantum mixtures in a strongly coupled dimer with an off-resonant vibrational mode. Toward this end, we calculate energy transfer dynamics and 2D electronic spectra of a model dimer that corresponds to the most strongly coupled bacteriochlorophyll molecules in the Fenna-Matthews-Olson complex in a numerically accurate manner. The quantum mixtures are found to be robust under the exposure of protein-induced fluctuations at cryogenic temperatures, irrespective of the resonance. At 300 K, however, the quantum mixing is disturbed more strongly by the fluctuations, and therefore, the beats in the 2D spectra become obscure even in a strongly coupled dimer with a resonant vibrational mode. Further, the overall behaviors of the energy transfer dynamics are demonstrated to be dominated by the environment and coupling between the 0 0 vibronic transitions as long as the Huang-Rhys factor of the vibrational mode is small. Finally, the electronic-vibrational quantum

  18. The electronic and optical properties of quantum nano-structures

    NASA Astrophysics Data System (ADS)

    Ham, Heon

    In semiconducting quantum nano-structures, the excitonic effects play an important role when we fabricate opto-electronic devices, such as lasers, diodes, detectors, etc. To gain a better understanding of the excitonic effects in quantum nano-structures, we investigated the exciton binding energy, oscillator strength, and linewidth in quantum nano-structures using both the infinite and finite well models. We investigated also the hydrogenic impurity binding energy and the photoionization cross section of the hydrogenic impurity in a spherical quantum dot. In our work, the variational approach is used in all calculations, because the Hamiltonian of the system is not separable, due to the different symmetries of the Coulomb and confining potentials. In the infinite well model of the semiconducting quantum nanostructures, the binding energy of the exciton increases with decreasing width of the potential barriers due to the increase in the effective strength of the Coulomb interaction between the electron and hole. In the finite well model, the exciton binding energy reaches a peak value, and the binding energy decreases with further decrease in the width of the potential barriers. The exciton linewidth in the infinite well model increases with decreasing wire radius, because the scattering rate of the exciton increases with decreasing wire radius. In the finite well model, the exciton linewidth in a cylindrical quantum wire reaches a peak value and the exciton linewidth decreases with further decrease in the wire radius, because the exciton is not well confined at very smaller wire radii. The binding energy of the hydrogenic impurity in a spherical quantum dot has also calculated using both the infinite and the finite well models. The binding energy of the hydrogenic impurity was calculated for on center and off center impurities in the spherical quantum dots. With decreasing radii of the dots, the binding energy of the hydrogenic impurity increases in the infinite

  19. Nanophotonic enhanced quantum emitters

    NASA Astrophysics Data System (ADS)

    Li, Xin; Zhou, Zhang-Kai; Yu, Ying; Gather, Malte; Di Falco, Andrea

    2017-08-01

    Quantum dots are excellent solid-state quantum sources, because of their stability, their narrow spectral linewidth, and radiative lifetime in the range of 1ns. Most importantly, they can be integrated into more complex nanophononics devices, to realize high quality quantum emitters of single photons or entangled photon sources. Recent progress in nanotechnology materials and devices has opened a number of opportunities to increase, optimize and ultimately control the emission property of single quantum dot. In this work, we present an approach that combines the properties of quantum dots with the flexibility of light control offered by nanoplasmonics and metamaterials structuring. Specifically, we show the nanophotonic enhancement of two types of quantum dots devices. The quantum dots are inserted into optical-positioned micropillar cavities, or decorated on the facets of core-shell GaAs/AlGaAs nanowires, fabricated with a bottom-up approach. In both cases, the metallic nanofeatures, which are designed to control the emission and the polarization state of the emitted light, are realized via direct electron-beam-induced deposition. This approach permits to create three-dimensional features with nanometric resolution and positional accuracy, and does not require wet lithographic steps and previous knowledge of the exact spatial arrangement of the quantum devices.

  20. Orientation-dependent imaging of electronically excited quantum dots

    NASA Astrophysics Data System (ADS)

    Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

    2018-02-01

    We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|electron motion, but either way a slice through the excited electronic state structure in the tunneling region is imaged. We then show experimentally that we can nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

  1. Orientation-dependent imaging of electronically excited quantum dots.

    PubMed

    Nguyen, Duc; Goings, Joshua J; Nguyen, Huy A; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

    2018-02-14

    We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x 0 , y 0 ) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x 0 , y 0 ) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density φ i x 0 ,y 0 2 of the excited orbital in the tunneling region. Thus, the SMA-STM signal is approximated by an orbital density map (ODM) of the resonantly excited orbital at energy E i . The situation is more complex for correlated electron motion, but either way a slice through the excited electronic state structure in the tunneling region is imaged. We then show experimentally that we can nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

  2. Quantum Hall Electron Nematics

    NASA Astrophysics Data System (ADS)

    MacDonald, Allan

    In 2D electron systems hosted by crystals with hexagonal symmetry, electron nematic phases with spontaneously broken C3 symmetry are expected to occur in the quantum Hall regime when triplets of Landau levels associated with three different Fermi surface pockets are partially filled. The broken symmetry state is driven by intravalley Coulombic exchange interactions that favor spontaneously polarized valley occupations. I will discuss three different examples of 2D electron systems in which this type of broken symmetry state is expected to occur: i) the SnTe (111) surface, ii) the Bi (111) surface. and iii) unbalanced bilayer graphene. This type of quantum Hall electron nematic state has so far been confirmed only in the Bi (111) case, in which the anisotropic quasiparticle wavefunctions of the broken symmetry state were directly imaged. In the SnTe case the nematic state phase boundary is controlled by a competition between intravalley Coulomb interactions and intervalley scattering processes that increase in relative strength with magnetic field. An in-plane Zeeman field alters the phase diagram by lifting the three-fold Landau level degeneracy, yielding a ground state energy with 2 π/3 periodicity as a function of Zeeman-field orientation angle. I will comment on the possibility of observing similar states in the absence of a magnetic field. Supported by DOE Division of Materials Sciences and Engineering Grant DE-FG03-02ER45958.

  3. Measurement-Device-Independent Quantum Key Distribution over 200 km

    NASA Astrophysics Data System (ADS)

    Tang, Yan-Lin; Yin, Hua-Lei; Chen, Si-Jing; Liu, Yang; Zhang, Wei-Jun; Jiang, Xiao; Zhang, Lu; Wang, Jian; You, Li-Xing; Guan, Jian-Yu; Yang, Dong-Xu; Wang, Zhen; Liang, Hao; Zhang, Zhen; Zhou, Nan; Ma, Xiongfeng; Chen, Teng-Yun; Zhang, Qiang; Pan, Jian-Wei

    2014-11-01

    Measurement-device-independent quantum key distribution (MDIQKD) protocol is immune to all attacks on detection and guarantees the information-theoretical security even with imperfect single-photon detectors. Recently, several proof-of-principle demonstrations of MDIQKD have been achieved. Those experiments, although novel, are implemented through limited distance with a key rate less than 0.1 bit /s . Here, by developing a 75 MHz clock rate fully automatic and highly stable system and superconducting nanowire single-photon detectors with detection efficiencies of more than 40%, we extend the secure transmission distance of MDIQKD to 200 km and achieve a secure key rate 3 orders of magnitude higher. These results pave the way towards a quantum network with measurement-device-independent security.

  4. Graphene quantum dot incorporated perovskite films: passivating grain boundaries and facilitating electron extraction.

    PubMed

    Fang, Xiang; Ding, Jianning; Yuan, Ningyi; Sun, Peng; Lv, Minghang; Ding, Guqiao; Zhu, Chong

    2017-02-22

    Organic-inorganic halide perovskites have emerged as attractive materials for use in photovoltaic cells. Owing to the existence of dangling bonds at the grain boundaries between perovskite crystals, minimizing the charge recombination at the surface or grain boundaries by passivating these trap states has been identified to be one of the most important strategies for further optimization of device performance. Previous reports have mainly focused on surface passivation by inserting special materials such as graphene or fullerene between the electron transfer layer and the perovskite film. Here, we report an enhanced efficiency of mesoscopic perovskite solar cells by using graphene quantum dots (GQDs) to passivate the grain boundaries of CH 3 NH 3 PbI 3 . The highest efficiency (17.62%) is achieved via decoration with 7% GQDs, which is an 8.2% enhancement with respect to a pure perovskite based device. Various analyses including electrochemical impedance spectroscopy, time-resolved photoluminescence decay and open-circuit voltage decay measurements are employed in investigating the mechanism behind the improvement in device performance. The findings reveal two important roles played by GQDs in promoting the performance of perovskite solar cells - that GQDs are conducive to facilitating electron extraction and can effectively passivate the electron traps at the perovskite grain boundaries.

  5. Gate-defined quantum confinement in suspended bilayer graphene

    NASA Astrophysics Data System (ADS)

    Allen, M. T.; Martin, J.; Yacoby, A.

    2012-07-01

    Quantum-confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum-confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that open a bandgap, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the energy gap induced by a perpendicular electric field and at B>0 using the quantum Hall ν=0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

  6. Photoinduced Single- and Multiple-Electron Dynamics Processes Enhanced by Quantum Confinement in Lead Halide Perovskite Quantum Dots

    DOE PAGES

    Vogel, Dayton J.; Kryjevski, Andrei; Inerbaev, Talgat; ...

    2017-03-21

    Methylammonium lead iodide perovskite (MAPbI 3) is a promising material for photovoltaic devices. A modification of MAPbI 3 into confined nanostructures is expected to further increase efficiency of solar energy conversion. Photoexcited dynamic processes in a MAPbI3 quantum dot (QD) have been modeled by many-body perturbation theory and nonadiabatic dynamics. A photoexcitation is followed by either exciton cooling (EC), its radiative (RR) or nonradiative recombination (NRR), or multiexciton generation (MEG) processes. Computed times of these processes fall in the order of MEG < EC < RR < NRR, where MEG is on the order of a few femtoseconds, EC ismore » in the picosecond range, while RR and NRR are on the order of nanoseconds. Computed time scales indicate which electronic transition pathways can contribute to increase in charge collection efficiency. Simulated mechanisms of relaxation and their rates show that quantum confinement promotes MEG in MAPbI 3 QDs.« less

  7. Manipulating the Flow of Thermal Noise in Quantum Devices.

    PubMed

    Barzanjeh, Shabir; Aquilina, Matteo; Xuereb, André

    2018-02-09

    There has been significant interest recently in using complex quantum systems to create effective nonreciprocal dynamics. Proposals have been put forward for the realization of artificial magnetic fields for photons and phonons; experimental progress is fast making these proposals a reality. Much work has concentrated on the use of such systems for controlling the flow of signals, e.g., to create isolators or directional amplifiers for optical signals. In this Letter, we build on this work but move in a different direction. We develop the theory of and discuss a potential realization for the controllable flow of thermal noise in quantum systems. We demonstrate theoretically that the unidirectional flow of thermal noise is possible within quantum cascaded systems. Viewing an optomechanical platform as a cascaded system we show here that one can ultimately control the direction of the flow of thermal noise. By appropriately engineering the mechanical resonator, which acts as an artificial reservoir, the flow of thermal noise can be constrained to a desired direction, yielding a thermal rectifier. The proposed quantum thermal noise rectifier could potentially be used to develop devices such as a thermal modulator, a thermal router, and a thermal amplifier for nanoelectronic devices and superconducting circuits.

  8. Manipulating the Flow of Thermal Noise in Quantum Devices

    NASA Astrophysics Data System (ADS)

    Barzanjeh, Shabir; Aquilina, Matteo; Xuereb, André

    2018-02-01

    There has been significant interest recently in using complex quantum systems to create effective nonreciprocal dynamics. Proposals have been put forward for the realization of artificial magnetic fields for photons and phonons; experimental progress is fast making these proposals a reality. Much work has concentrated on the use of such systems for controlling the flow of signals, e.g., to create isolators or directional amplifiers for optical signals. In this Letter, we build on this work but move in a different direction. We develop the theory of and discuss a potential realization for the controllable flow of thermal noise in quantum systems. We demonstrate theoretically that the unidirectional flow of thermal noise is possible within quantum cascaded systems. Viewing an optomechanical platform as a cascaded system we show here that one can ultimately control the direction of the flow of thermal noise. By appropriately engineering the mechanical resonator, which acts as an artificial reservoir, the flow of thermal noise can be constrained to a desired direction, yielding a thermal rectifier. The proposed quantum thermal noise rectifier could potentially be used to develop devices such as a thermal modulator, a thermal router, and a thermal amplifier for nanoelectronic devices and superconducting circuits.

  9. Atomtronics: Material and Device Physics of Quantum Gases

    DTIC Science & Technology

    matter physics to electrical engineering. Our projects title Atomtronics: Material and device physics of quantum gases illustrates the chasm we bridged...starting from therich and fundamental physics already revealed with cold atoms systems, then leading to an understanding of the functional materials

  10. Multiscale examination and modeling of electron transport in nanoscale materials and devices

    NASA Astrophysics Data System (ADS)

    Banyai, Douglas R.

    For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) in use today. Several new transistor designs, some designed and built here at Michigan Tech, involve electrons tunneling their way through arrays of nanoparticles. We use a multi-scale approach to model these devices and study their behavior. For investigating the tunneling characteristics of the individual junctions, we use a first-principles approach to model conduction between sub-nanometer gold particles. To estimate the change in energy due to the movement of individual electrons, we use the finite element method to calculate electrostatic capacitances. The kinetic Monte Carlo method allows us to use our knowledge of these details to simulate the dynamics of an entire device---sometimes consisting of hundreds of individual particles---and watch as a device 'turns on' and starts conducting an electric current. Scanning tunneling microscopy (STM) and the closely related scanning tunneling spectroscopy (STS) are a family of powerful experimental techniques that allow for the probing and imaging of surfaces and molecules at atomic resolution. However, interpretation of the results often requires comparison with theoretical and computational models. We have developed a new method for calculating STM topographs and STS spectra. This method combines an established method for approximating the

  11. W-state Analyzer and Multi-party Measurement-device-independent Quantum Key Distribution

    PubMed Central

    Zhu, Changhua; Xu, Feihu; Pei, Changxing

    2015-01-01

    W-state is an important resource for many quantum information processing tasks. In this paper, we for the first time propose a multi-party measurement-device-independent quantum key distribution (MDI-QKD) protocol based on W-state. With linear optics, we design a W-state analyzer in order to distinguish the four-qubit W-state. This analyzer constructs the measurement device for four-party MDI-QKD. Moreover, we derived a complete security proof of the four-party MDI-QKD, and performed a numerical simulation to study its performance. The results show that four-party MDI-QKD is feasible over 150 km standard telecom fiber with off-the-shelf single photon detectors. This work takes an important step towards multi-party quantum communication and a quantum network. PMID:26644289

  12. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

    DOE PAGES

    Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; ...

    2015-04-08

    We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 10 10 cm -2 to 2.7 × 10 11 cm -2 were achieved, yielding a maximal combined Hall mobility (μ Hall ) of 7.7 × 10 5 cm 2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n Hall > 3.3 × 10 10 cm -2,more » consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.« less

  13. On the applicability of one- and many-electron quantum chemistry models for hydrated electron clusters

    NASA Astrophysics Data System (ADS)

    Turi, László

    2016-04-01

    We evaluate the applicability of a hierarchy of quantum models in characterizing the binding energy of excess electrons to water clusters. In particular, we calculate the vertical detachment energy of an excess electron from water cluster anions with methods that include one-electron pseudopotential calculations, density functional theory (DFT) based calculations, and ab initio quantum chemistry using MP2 and eom-EA-CCSD levels of theory. The examined clusters range from the smallest cluster size (n = 2) up to nearly nanosize clusters with n = 1000 molecules. The examined cluster configurations are extracted from mixed quantum-classical molecular dynamics trajectories of cluster anions with n = 1000 water molecules using two different one-electron pseudopotenial models. We find that while MP2 calculations with large diffuse basis set provide a reasonable description for the hydrated electron system, DFT methods should be used with precaution and only after careful benchmarking. Strictly tested one-electron psudopotentials can still be considered as reasonable alternatives to DFT methods, especially in large systems. The results of quantum chemistry calculations performed on configurations, that represent possible excess electron binding motifs in the clusters, appear to be consistent with the results using a cavity structure preferring one-electron pseudopotential for the hydrated electron, while they are in sharp disagreement with the structural predictions of a non-cavity model.

  14. On the applicability of one- and many-electron quantum chemistry models for hydrated electron clusters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Turi, László, E-mail: turi@chem.elte.hu

    2016-04-21

    We evaluate the applicability of a hierarchy of quantum models in characterizing the binding energy of excess electrons to water clusters. In particular, we calculate the vertical detachment energy of an excess electron from water cluster anions with methods that include one-electron pseudopotential calculations, density functional theory (DFT) based calculations, and ab initio quantum chemistry using MP2 and eom-EA-CCSD levels of theory. The examined clusters range from the smallest cluster size (n = 2) up to nearly nanosize clusters with n = 1000 molecules. The examined cluster configurations are extracted from mixed quantum-classical molecular dynamics trajectories of cluster anions withmore » n = 1000 water molecules using two different one-electron pseudopotenial models. We find that while MP2 calculations with large diffuse basis set provide a reasonable description for the hydrated electron system, DFT methods should be used with precaution and only after careful benchmarking. Strictly tested one-electron psudopotentials can still be considered as reasonable alternatives to DFT methods, especially in large systems. The results of quantum chemistry calculations performed on configurations, that represent possible excess electron binding motifs in the clusters, appear to be consistent with the results using a cavity structure preferring one-electron pseudopotential for the hydrated electron, while they are in sharp disagreement with the structural predictions of a non-cavity model.« less

  15. Thermal electron-tunneling devices as coolers and amplifiers

    NASA Astrophysics Data System (ADS)

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  16. Thermal electron-tunneling devices as coolers and amplifiers

    PubMed Central

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-01-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices. PMID:26893109

  17. 78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  18. Appendage mountable electronic devices conformable to surfaces

    DOEpatents

    Rogers, John; Ying, Ming; Bonifas, Andrew; Lu, Nanshu

    2017-01-24

    Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

  19. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with... 49 Transportation 4 2010-10-01 2010-10-01 false Use of personal electronic devices. 220.305...

  20. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with...

  1. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with...

  2. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Borah, Abhinandan; Agarwal, Hitesh; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar

    There is an increasing interest in the electronic properties of few layer graphene as it offers a platform to study electronic interactions because the dispersion of bands can be tuned with number and stacking of layers in combination with electric field. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism (QHF) seen in a dual gated ABA trilayer graphene sample. Due to high mobility (500,000 cm2V-1s-1) in our device compared to previous studies, we find all symmetry broken states including ν = 0 filling factor at relatively low magnetic field (6T). Activation measurements show that Landau Level (LL) gaps are enhanced by interactions. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of QHF states at low magnetic field.

  3. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would... 49 Transportation 4 2010-10-01 2010-10-01 false General use of electronic devices. 220.303 Section...

  4. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would...

  5. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would...

  6. Quantum radiation reaction in laser-electron-beam collisions.

    PubMed

    Blackburn, T G; Ridgers, C P; Kirk, J G; Bell, A R

    2014-01-10

    It is possible using current high-intensity laser facilities to reach the quantum radiation reaction regime for energetic electrons. An experiment using a wakefield accelerator to drive GeV electrons into a counterpropagating laser pulse would demonstrate the increase in the yield of high-energy photons caused by the stochastic nature of quantum synchrotron emission: we show that a beam of 10(9) 1 GeV electrons colliding with a 30 fs laser pulse of intensity 10(22)  W cm(-2) will emit 6300 photons with energy greater than 700 MeV, 60× the number predicted by classical theory.

  7. Imaging quantum transport using scanning gate microscopy

    NASA Astrophysics Data System (ADS)

    Hackens, Benoit

    2014-03-01

    Quantum transport in nanodevices is usually probed thanks to measurements of the electrical resistance or conductance, which lack the spatial resolution necessary to probe electron behaviour inside the devices. In this talk, we will show that scanning gate microscopy (SGM) yields real-space images of quantum transport phenomena inside archetypal mesoscopic devices such as quantum point contacts and quantum rings. We will first discuss the SGM technique, which is based on mapping the electrical conductance of a device as an electrically-biased sharp metallic tip scans in its vicinity. With SGM, we demonstrated low temperature imaging of the electron probability density and interferences in embedded mesoscopic quantum rings [B. Hackens et al., Nat. Phys. 2, 826 (2006)]. At high magnetic field, thanks to the SGM conductance maps, one can decrypt complex transport phenomena such as tunneling between quantum Hall edge state, either direct or through localized states [B. Hackens et al., Nat. Comm. 1, 39 (2010)]. Moreover, the technique also allows to perform local spectroscopy of electron transport through selected localized states [F. Martins et al., New J. of Phys. 15, 013049 (2013); F. Martins et al., Sci. Rep. 3, 1416 (2013)]. Overall, these examples show that scanning gate microscopy is a powerful tool for imaging charge carrier behavior inside devices fabricated from a variety of materials, and opens the way towards a more intimate manipulation of charge and quasiparticle transport. This work was performed in collaboration with F. Martins, S. Faniel, B. Brun, M. Pala, X. Wallart, L. Desplanque, B. Rosenow, T. Ouisse, H. Sellier, S. Huant and V. Bayot.

  8. Remote detection of electronic devices

    DOEpatents

    Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

    2012-09-25

    An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

  9. 76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-01

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... electronic devices, including wireless communication devices, portable music and data processing devices, and... electronic devices, including wireless communication devices, portable music and data processing devices, and...

  10. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory for...

  11. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory for...

  12. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory for...

  13. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory for...

  14. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory for...

  15. Quantum electron tunneling in respiratory complex I.

    PubMed

    Hayashi, Tomoyuki; Stuchebrukhov, Alexei A

    2011-05-12

    We have simulated the atomistic details of electronic wiring of all Fe/S clusters in complex I, a key enzyme in the respiratory electron transport chain. The tunneling current theory of many-electron systems is applied to the broken-symmetry (BS) states of the protein at the ZINDO level. While the one-electron tunneling approximation is found to hold in electron tunneling between the antiferromagnetic binuclear and tetranuclear Fe/S clusters without major orbital or spin rearrangement of the core electrons, induced polarization of the core electrons contributes significantly to decrease the electron transfer rates to 19-56 %. Calculated tunneling energy is about 3 eV higher than Fermi level in the band gap of the protein, which supports that the mechanism of electron transfer is quantum mechanical tunneling, as in the rest of the electron transport chain. Resulting electron tunneling pathways consist of up to three key contributing protein residues between neighboring Fe/S clusters. A signature of the wave properties of electrons is observed as distinct quantum interferences when multiple tunneling pathways exist. In N6a-N6b, electron tunnels along different pathways depending on the involved BS states, suggesting possible fluctuations of the tunneling pathways driven by the local protein environment. The calculated distance dependence of the electron transfer rates with internal water molecules included is in good agreement with a reported phenomenological relation.

  16. Electronic quantum confinement in cylindrical potential well

    NASA Astrophysics Data System (ADS)

    Baltenkov, Arkadiy S.; Msezane, Alfred Z.

    2016-04-01

    The effects of quantum confinement on the momentum distribution of electrons confined within a cylindrical potential well have been analyzed. The motivation is to understand specific features of the momentum distribution of electrons when the electron behavior is completely controlled by the parameters of a non-isotropic potential cavity. It is shown that studying the solutions of the wave equation for an electron confined in a cylindrical potential well offers the possibility to analyze the confinement behavior of an electron executing one- or two-dimensional motion in the three-dimensional space within the framework of the same mathematical model. Some low-lying electronic states with different symmetries have been considered and the corresponding wave functions have been calculated; the behavior of their nodes and their peak positions with respect to the parameters of the cylindrical well has been analyzed. Additionally, the momentum distributions of electrons in these states have been calculated. The limiting cases of the ratio of the cylinder length H and its radius R0 have been considered; when the cylinder length H significantly exceeds its radius R0 and when the cylinder radius is much greater than its length. The cylindrical quantum confinement effects on the momentum distribution of electrons in these potential wells have been analyzed. The possible application of the results obtained here for the description of the general features in the behavior of electrons in nanowires with metallic type of conductivity (or nanotubes) and ultrathin epitaxial films (or graphene sheets) are discussed. Possible experiments are suggested where the quantum confinement can be manifested. Contribution to the Topical Issue "Atomic Cluster Collisions (7th International Symposium)", edited by Gerardo Delgado Barrio, Andrey Solov'Yov, Pablo Villarreal, Rita Prosmiti.

  17. Experimental investigations of quantum confined silicon nanoparticle light emitting devices

    NASA Astrophysics Data System (ADS)

    Ligman, Rebekah Kristine

    2007-12-01

    As the demands on our world's energy resources continue to grow, alternative high efficiency materials such as quantum confined silicon nanoparticles (Si nps) are desirable for their potential low cost application in white light illumination, in optical displays, and in on-chip optical interconnects. Many fabrication and passivation techniques exist that produce Si nps with high photogenerated quantum yield. However, high electrically generated Si np quantum efficiency has eluded our society. Predominantly due to the lack of a stable surface passivation and a device fabrication technique that preserves the Si np optical properties. To amend these deficiencies, the passivation of nonthermal plasma fabricated Si nps with a surface oxide grown under UV exposure was first investigated. Control over the surface oxidized Si np (Si/SiO2) passivation growth was demonstrated and the optical stability of Si/SiO2 nps was suitable for demonstrating Si np electroluminescence (EL). Two approaches for constructing hybrid organic light emitting diode (OLED) devices around nonthermal plasma fabricated Si nps were then investigated. Multilayer devices, composed of a nonthermal plasma fabricated Si np layer embedded within an OLED, were first studied. However, no EL from Si nps was obtained using the multilayer device architecture due to poor control over the Si np film thickness. Single layer polymer(Si/SiO2) hybrid devices, composed of nps randomly dispersed within an extrinsic conductive polymer, were then studied and EL from Si/SiO2 nps was obtained. The hybrid device optical and electrical response was enhanced over the control devices, possibly due to morphology changes induced by the Si/SiO2 nps. The energy transfer (ET) processes in single layer polymer(Si/SiO 2) hybrid devices were then investigated by imposing known spatial separations between the intrinsic conductive polymers and Si/SiO2 nps. No measurable Si/SiO2 np emission was observed from the intrinsic hybrid devices

  18. A cost-effective measurement-device-independent quantum key distribution system for quantum networks

    NASA Astrophysics Data System (ADS)

    Valivarthi, Raju; Zhou, Qiang; John, Caleb; Marsili, Francesco; Verma, Varun B.; Shaw, Matthew D.; Nam, Sae Woo; Oblak, Daniel; Tittel, Wolfgang

    2017-12-01

    We experimentally realize a measurement-device-independent quantum key distribution (MDI-QKD) system. It is based on cost-effective and commercially available hardware such as distributed feedback lasers and field-programmable gate arrays that enable time-bin qubit preparation and time-tagging, and active feedback systems that allow for compensation of time-varying properties of photons after transmission through deployed fiber. We examine the performance of our system, and conclude that its design does not compromise performance. Our demonstration paves the way for MDI-QKD-based quantum networks in star-type topology that extend over more than 100 km distance.

  19. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable...

  20. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable...

  1. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable...

  2. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable...

  3. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable...

  4. Electron-Electron and Electron-Phonon interactions effects on the tunnel electronic spectrum of PbS quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Hongyue; Lhuillier, Emmanuel; Yu, Qian; Mottaghizadeh, Alireza; Ulysse, Christian; Zimmers, Alexandre; Dubertret, Benoit; Aubin, Herve

    2015-03-01

    We present a tunnel spectroscopy study of the electronic spectrum of single PbS Quantum Dots (QDs) trapped between nanometer-spaced electrodes, measured at low temperature T=5 K. The carrier filling of the QD can be controlled either by the drain voltage in the shell filling regime or by a gate voltage. In the empty QD, the tunnel spectrum presents the expected signature of the 8x degenerated excited levels. In the drain controlled shell filling regime, the levels degeneracies are lifted by the global electrostatic Coulomb energy of the QD; in the gate controlled shell filling regime, the levels degeneracies are lifted by the intra-Coulomb interactions. In the charged quantum dot, electron-phonons interactions lead to the apparition of Franck-Condon side bands on the single excited levels and possibly Franck Condon blockade at low energy. The sharpening of excited levels at higher gate voltage suggests that the magnitude of electron-phonon interactions is decreased upon increasing the electron filling in the quantum dot. This work was supported by the French ANR Grants 10-BLAN-0409-01, 09-BLAN-0388-01, by the Region Ile-de-France in the framework of DIM Nano-K and by China Scholarship Council.

  5. Polarized electrons, trions, and nuclei in charged quantum dots

    NASA Astrophysics Data System (ADS)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  6. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities

    NASA Astrophysics Data System (ADS)

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-12-01

    Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

  7. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

    PubMed

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-12-18

    Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

  8. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  9. Karpman-Washimi magnetization with electron-exchange effects in quantum plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hong, Woo-Pyo; Jamil, M.; Rasheed, A.

    2015-07-15

    The influence of quantum electron-exchange on the Karpman-Washimi ponderomotive magnetization is investigated in quantum plasmas. The ponderomotive magnetization and the total radiation power due to the non-stationary Karpman-Washimi interaction related to the time-varying field intensity are obtained as functions of the de Broglie wave length, Debye length, and electron-exchange parameter. The result shows that the electron-exchange effect enhances the cyclotron frequency due to the ponderomotive interactions in quantum plasmas. It is also shown that the electron-exchange effect on the Karpman-Washimi magnetization increases with increasing wave number. In addition, the Karpman-Washimi magnetization and the total radiation power increase with an increasemore » in the ratio of the Debye length to the de Broglie wave length. In streaming quantum plasmas, it is shown that the electron-exchange effect enhances the ponderomotive magnetization below the resonant wave number and, however, suppresses the ponderomotive magnetization above the resonant wave number. The variation of the Karpman-Washimi magnetization and the radiation power due to the variation of the electron-exchange effect and plasma parameters is also discussed.« less

  10. Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

    NASA Technical Reports Server (NTRS)

    Biegel, Bryan A.; Yu, Zhi-Ping; Ancona, Mario; Rafferty, Conor; Saini, Subhash (Technical Monitor)

    1999-01-01

    We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

  11. Design rules for quantum imaging devices: experimental progress using CMOS single-photon detectors

    NASA Astrophysics Data System (ADS)

    Charbon, Edoardo; Gunther, Neil J.; Boiko, Dmitri L.; Beretta, Giordano B.

    2006-08-01

    We continue our previous program1 where we introduced a set of quantum-based design rules directed at quantum engineers who design single-photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high-resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio-fluorescence microscopy and 3D vision systems. They have also been particularly successful for intra-chip optical communications implemented entirely in CMOS technology. More importantly for our purposes, a very low dark count allows SPADs to detect rare photon events with a high dynamic range and high signal-to-noise ratio. Our CMOS SPADs support multi-channel detection of photon arrivals with picosecond accuracy, several million times per second, due to a very short detection cycle. The tiny chip area means they are suitable for highly miniaturized quantum imaging devices and that is how we employ them in this paper. Our quantum path integral analysis of the Young-Afshar-Wheeler interferometer showed that Bohr's complementarity principle was not violated due the previously overlooked effect of photon bifurcation within the lens--a phenomenon consistent with our quantum design rules--which accounts for the loss of which-path information in the presence of interference. In this paper, we report on our progress toward the construction of quantitative design rules as well as some proposed tests for quantum imaging devices using entangled photon sources with our SPAD imager.

  12. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

    PubMed Central

    Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

    2016-01-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

  13. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    PubMed

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-02-18

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  14. Computation of energy states of hydrogenic quantum dot with two-electrons

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yakar, Y., E-mail: yuyakar@yahoo.com; Özmen, A., E-mail: aozmen@selcuk.edu.tr; Çakır, B., E-mail: bcakir@selcuk.edu.tr

    2016-03-25

    In this study we have investigated the electronic structure of the hydrogenic quantum dot with two electrons inside an impenetrable potential surface. The energy eigenvalues and wavefunctions of the ground and excited states of spherical quantum dot have been calculated by using the Quantum Genetic Algorithm (QGA) and Hartree-Fock Roothaan (HFR) method, and the energies are investigated as a function of dot radius. The results show that as dot radius increases, the energy of quantum dot decreases.

  15. Correlating electronic transport to atomic structures in self-assembled quantum wires.

    PubMed

    Qin, Shengyong; Kim, Tae-Hwan; Zhang, Yanning; Ouyang, Wenjie; Weitering, Hanno H; Shih, Chih-Kang; Baddorf, Arthur P; Wu, Ruqian; Li, An-Ping

    2012-02-08

    Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale. © 2012 American Chemical Society

  16. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

    NASA Astrophysics Data System (ADS)

    Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

    2018-02-01

    A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

  17. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an electronic...

  18. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an electronic...

  19. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 1 2013-10-01 2013-10-01 false Electronic position fixing devices. 28.260 Section 28... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the...

  20. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 1 2014-10-01 2014-10-01 false Electronic position fixing devices. 28.260 Section 28... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the...

  1. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an electronic...

  2. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 1 2012-10-01 2012-10-01 false Electronic position fixing devices. 28.260 Section 28... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the...

  3. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 1 2010-10-01 2010-10-01 false Electronic position fixing devices. 28.260 Section 28... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the...

  4. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 1 2011-10-01 2011-10-01 false Electronic position fixing devices. 28.260 Section 28... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the...

  5. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an electronic...

  6. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an electronic...

  7. Quantum electronic stress: density-functional-theory formulation and physical manifestation.

    PubMed

    Hu, Hao; Liu, Miao; Wang, Z F; Zhu, Junyi; Wu, Dangxin; Ding, Hepeng; Liu, Zheng; Liu, Feng

    2012-08-03

    The concept of quantum electronic stress (QES) is introduced and formulated within density functional theory to elucidate extrinsic electronic effects on the stress state of solids and thin films in the absence of lattice strain. A formal expression of QES (σ(QE)) is derived in relation to deformation potential of electronic states (Ξ) and variation of electron density (Δn), σ(QE) = ΞΔn as a quantum analog of classical Hooke's law. Two distinct QES manifestations are demonstrated quantitatively by density functional theory calculations: (1) in the form of bulk stress induced by charge carriers and (2) in the form of surface stress induced by quantum confinement. Implications of QES in some physical phenomena are discussed to underlie its importance.

  8. Electron-beam generated porous dextran gels: experimental and quantum chemical studies.

    PubMed

    Naumov, Sergej; Knolle, Wolfgang; Becher, Jana; Schnabelrauch, Matthias; Reichelt, Senta

    2014-06-01

    The aim of this work was to investigate the reaction mechanism of electron-beam generated macroporous dextran cryogels by quantum chemical calculation and electron paramagnetic resonance measurements. Electron-beam radiation was used to initiate the cross-linking reaction of methacrylated dextran in semifrozen aqueous solutions. The pore morphology of the resulting cryogels was visualized by scanning electron microscopy. Quantum chemical calculations and electron paramagnetic resonance studies provided information on the most probable reaction pathway and the chain growth radicals. The most probable reaction pathway was a ring opening reaction and the addition of a C-atom to the double-bond of the methacrylated dextran molecule. First detailed quantum chemical calculation on the reaction mechanism of electron-beam initiated cross-linking reaction of methacrylated dextran are presented.

  9. Terahertz detection using double quantum well devices

    NASA Astrophysics Data System (ADS)

    Khodier, Majid; Christodoulou, Christos G.; Simmons, Jerry A.

    2001-12-01

    This paper discusses the principle of operation of an electrically tunable THz detector, working around 2.54 THz, integrated with a bowtie antenna. The detection is based on the idea of photon-assisted tunneling (PAT) in a double quantum well (DQW) device. The bowtie antenna is used to collect the THz radiation and feed it to the detector for processing. The Bowtie antenna geometry is integrated with the DQW device to achieve broadband characteristic, easy design, and compatibility with the detector fabrication process. The principle of operation of the detector is introduced first. Then, results of different bowtie antenna layouts are presented and discussed.

  10. Gate-controlled electromechanical backaction induced by a quantum dot

    NASA Astrophysics Data System (ADS)

    Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

    2016-04-01

    Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

  11. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Barron, Carole C.; Fleming, James G.; Montague, Stephen

    1999-01-01

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

  12. External amplitude and frequency modulation of a terahertz quantum cascade laser using metamaterial/graphene devices.

    PubMed

    Kindness, S J; Jessop, D S; Wei, B; Wallis, R; Kamboj, V S; Xiao, L; Ren, Y; Braeuninger-Weimer, P; Aria, A I; Hofmann, S; Beere, H E; Ritchie, D A; Degl'Innocenti, R

    2017-08-09

    Active control of the amplitude and frequency of terahertz sources is an essential prerequisite for exploiting a myriad of terahertz applications in imaging, spectroscopy, and communications. Here we present a optoelectronic, external modulation technique applied to a terahertz quantum cascade laser which holds the promise of addressing a number of important challenges in this research area. A hybrid metamaterial/graphene device is implemented into an external cavity set-up allowing for optoelectronic tuning of feedback into a quantum cascade laser. We demonstrate powerful, all-electronic, control over the amplitude and frequency of the laser output. Full laser switching is performed by electrostatic gating of the metamaterial/graphene device, demonstrating a modulation depth of 100%. External control of the emission spectrum is also achieved, highlighting the flexibility of this feedback method. By taking advantage of the frequency dispersive reflectivity of the metamaterial array, different modes of the QCL output are selectively suppressed using lithographic tuning and single mode operation of the multi-mode laser is enforced. Side mode suppression is electrically modulated from ~6 dB to ~21 dB, demonstrating active, optoelectronic modulation of the laser frequency content between multi-mode and single mode operation.

  13. Electrostatic modulation of periodic potentials in a two-dimensional electron gas: From antidot lattice to quantum dot lattice

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Goswami, Srijit; Aamir, Mohammed Ali; Shamim, Saquib

    2013-12-04

    We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides themore » opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.« less

  14. Molecular Electronic Devices Based On Electrooptical Behavior Of Heme-Like Molecules

    NASA Astrophysics Data System (ADS)

    Simic-Glavaski, B.

    1986-02-01

    This paper discusses application of the electrically modulated and unusually strong Raman emitted light produced by an adsorbed monolayer of phthalocyanine molecules on silver electrode or silver bromide substrates and on neural membranes. The analysis of electronic energy levels in semiconducting silver bromide and the adsorbed phthalocyanine molecules suggests a lasing mechanism as a possible origin of the high enhancement factor in surface enhanced Raman scattering. Electrically modulated Raman scattering may be used as a carrier of information which is drawn fran the fast intramolecular electron transfer aN,the multiplicity of quantum wells in phthalocyanine molecules. Fast switching times on the order of 10-13 seconds have been measured at room temperature. Multilevel and multioutput optical signals have also been obtained fran such an electrically modulated adsorbed monolayer of phthalocyanine molecules which can be precisely addressed and interrogated. This may be of practical use to develop Nlecular electronic devices with high density memory and fast parallel processing systems with a typical 1020 gate Hz/cm2 capacity at room temperature for use in optical computers. The paper also discusses the electrooptical modulation of Raman signals obtained from adsorbed bio-compatible phthalocyanine molecules on nerve membranes. This optical probe of neural systems can be used in studies of complex information processing in neural nets and provides a possible method for interfacing natural and man-made information processing devices.

  15. Quantum coherence selective 2D Raman–2D electronic spectroscopy

    PubMed Central

    Spencer, Austin P.; Hutson, William O.; Harel, Elad

    2017-01-01

    Electronic and vibrational correlations report on the dynamics and structure of molecular species, yet revealing these correlations experimentally has proved extremely challenging. Here, we demonstrate a method that probes correlations between states within the vibrational and electronic manifold with quantum coherence selectivity. Specifically, we measure a fully coherent four-dimensional spectrum which simultaneously encodes vibrational–vibrational, electronic–vibrational and electronic–electronic interactions. By combining near-impulsive resonant and non-resonant excitation, the desired fifth-order signal of a complex organic molecule in solution is measured free of unwanted lower-order contamination. A critical feature of this method is electronic and vibrational frequency resolution, enabling isolation and assignment of individual quantum coherence pathways. The vibronic structure of the system is then revealed within an otherwise broad and featureless 2D electronic spectrum. This method is suited for studying elusive quantum effects in which electronic transitions strongly couple to phonons and vibrations, such as energy transfer in photosynthetic pigment–protein complexes. PMID:28281541

  16. QCAD simulation and optimization of semiconductor double quantum dots

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina

    2013-12-01

    We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltagesmore » in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for

  17. Entanglement of Electron Spins in Two Coupled Quantum Dots

    NASA Astrophysics Data System (ADS)

    Chen, Yuanzhen; Webb, Richard

    2004-03-01

    We study the entanglement of electron spins in a coupled quantum dots system at 70 mK. Two quantum dots are fabricated in a GaAs/AlGaAs heterostructure containing a high mobility 2-D electron gas. The two dots can be tuned independently and the electron spins in the dots are coupled through an exchange interaction between them. An exchange gate is used to vary the height and width of a potential barrier between the two dots, thus controlling the strength of the exchange interaction. Electrons are injected to the coupled dots by two independent DC currents and the output of the dots is incident on a beam splitter, which introduces quantum interferences. Cross-correlations of the shot noise of currents from the two output channels are measured and compared with theory (1). *Work supported by LPS and ARDA under MDA90401C0903 and NSF under DMR 0103223. (1) Burkard, Loss, & Sukhorukov, Phys. Rev. B61, R16303 (2000).

  18. Non-fullerene electron acceptors for organic photovoltaic devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jenekhe, Samson A.; Li, Haiyan; Earmme, Taeshik

    Non-fullerene electron acceptors for highly efficient organic photovoltaic devices are described. The non-fullerene electron acceptors have an extended, rigid, .pi.-conjugated electron-deficient framework that can facilitate exciton and charge derealization. The non-fullerene electron acceptors can physically mix with a donor polymer and facilitate improved electron transport. The non-fullerene electron acceptors can be incorporated into organic electronic devices, such as photovoltaic cells.

  19. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

    PubMed

    Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

    2011-11-09

    Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.

  20. Effects of magnetic field on electron-electron intersubband scattering rates in quantum wells.

    NASA Astrophysics Data System (ADS)

    Kempa, K.; Zhou, Y.; Engelbrecht, J.; Bakshi, P.

    2001-03-01

    Electron-electron scattering dominates the physics of carrier relaxation in quantum nano-structures used as active regions of THz radiation sources. This is the limiting mechanism in achieving population inversion, and reducing its deleterious effects could clear the way to a THz laser. We study here the inter-subband relaxation processes due to the electron-electron scattering in quantum well structures, in a magnetic field. We obtain the scattering rate from the imaginary part of the electron self-energy in the random phase approximation, extending our earlier studies [1] to nonzero magnetic fields. We find that the scattering rate is peaked at two possible sets of arrangements of the Landau levels (LL) of the two subbands of interest. The first set occurs when the LL of both subbands align, and the other when the LL misalign, so that the LL of one subband lie exactly in the middle between those of the other subband. Experiments on various quantum cascade structures show that the misaligned set of transitions is completely suppressed. >From our calculations this implies that there is no population inversion in those structures. Work supported by US Army Research Office. [1] K. Kempa, P. Bakshi, J. R. Engelbrecht, and Y. Zhou, Phys. Rev. B61, 11083 (2000).

  1. Megahertz-Rate Semi-Device-Independent Quantum Random Number Generators Based on Unambiguous State Discrimination

    NASA Astrophysics Data System (ADS)

    Brask, Jonatan Bohr; Martin, Anthony; Esposito, William; Houlmann, Raphael; Bowles, Joseph; Zbinden, Hugo; Brunner, Nicolas

    2017-05-01

    An approach to quantum random number generation based on unambiguous quantum state discrimination is developed. We consider a prepare-and-measure protocol, where two nonorthogonal quantum states can be prepared, and a measurement device aims at unambiguously discriminating between them. Because the states are nonorthogonal, this necessarily leads to a minimal rate of inconclusive events whose occurrence must be genuinely random and which provide the randomness source that we exploit. Our protocol is semi-device-independent in the sense that the output entropy can be lower bounded based on experimental data and a few general assumptions about the setup alone. It is also practically relevant, which we demonstrate by realizing a simple optical implementation, achieving rates of 16.5 Mbits /s . Combining ease of implementation, a high rate, and a real-time entropy estimation, our protocol represents a promising approach intermediate between fully device-independent protocols and commercial quantum random number generators.

  2. Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

    DOE PAGES

    Foote, Ryan H.; Ward, Daniel R.; Prance, J. R.; ...

    2015-09-11

    Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here in this paper, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Finally, our results aremore » consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.« less

  3. Tunable Electron-Electron Interactions in LaAlO 3 / SrTiO 3 Nanostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cheng, Guanglei; Tomczyk, Michelle; Tacla, Alexandre B.

    The interface between the two complex oxides LaAlO 3 and SrTiO 3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of “sketched” quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the d xz andmore » d yz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.« less

  4. Tunable Electron-Electron Interactions in LaAlO 3 / SrTiO 3 Nanostructures

    DOE PAGES

    Cheng, Guanglei; Tomczyk, Michelle; Tacla, Alexandre B.; ...

    2016-12-01

    The interface between the two complex oxides LaAlO 3 and SrTiO 3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of “sketched” quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the d xz andmore » d yz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.« less

  5. Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lian, Xiaojuan, E-mail: xjlian2005@gmail.com; Cartoixà, Xavier; Miranda, Enrique

    2014-06-28

    We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO{sub 2} to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO{sub 2}-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFsmore » allows revealing significant structural differences in the CF of these two types of devices and RS modes.« less

  6. Quantum theory for 1D X-ray free electron laser

    NASA Astrophysics Data System (ADS)

    Anisimov, Petr M.

    2018-06-01

    Classical 1D X-ray Free Electron Laser (X-ray FEL) theory has stood the test of time by guiding FEL design and development prior to any full-scale analysis. Future X-ray FELs and inverse-Compton sources, where photon recoil approaches an electron energy spread value, push the classical theory to its limits of applicability. After substantial efforts by the community to find what those limits are, there is no universally agreed upon quantum approach to design and development of future X-ray sources. We offer a new approach to formulate the quantum theory for 1D X-ray FELs that has an obvious connection to the classical theory, which allows for immediate transfer of knowledge between the two regimes. We exploit this connection in order to draw quantum mechanical conclusions about the quantum nature of electrons and generated radiation in terms of FEL variables.

  7. Quantum-engineered interband cascade photovoltaic devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

    2013-12-18

    Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

  8. High-Speed Device-Independent Quantum Random Number Generation without a Detection Loophole

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Yuan, Xiao; Li, Ming-Han; Zhang, Weijun; Zhao, Qi; Zhong, Jiaqiang; Cao, Yuan; Li, Yu-Huai; Chen, Luo-Kan; Li, Hao; Peng, Tianyi; Chen, Yu-Ao; Peng, Cheng-Zhi; Shi, Sheng-Cai; Wang, Zhen; You, Lixing; Ma, Xiongfeng; Fan, Jingyun; Zhang, Qiang; Pan, Jian-Wei

    2018-01-01

    Quantum mechanics provides the means of generating genuine randomness that is impossible with deterministic classical processes. Remarkably, the unpredictability of randomness can be certified in a manner that is independent of implementation devices. Here, we present an experimental study of device-independent quantum random number generation based on a detection-loophole-free Bell test with entangled photons. In the randomness analysis, without the independent identical distribution assumption, we consider the worst case scenario that the adversary launches the most powerful attacks against the quantum adversary. After considering statistical fluctuations and applying an 80 Gb ×45.6 Mb Toeplitz matrix hashing, we achieve a final random bit rate of 114 bits /s , with a failure probability less than 10-5. This marks a critical step towards realistic applications in cryptography and fundamental physics tests.

  9. Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

    NASA Astrophysics Data System (ADS)

    Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K.-F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

    2018-02-01

    We report magnetotransport measurements on magnetically doped (Bi,Sb ) 2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

  10. Quantum Electron Tunneling in Respiratory Complex I1

    PubMed Central

    Hayashi, Tomoyuki; Stuchebrukhov, Alexei A.

    2014-01-01

    We have simulated the atomistic details of electronic wiring of all Fe/S clusters in complex I, a key enzyme in the respiratory electron transport chain. The tunneling current theory of many-electron systems is applied to the broken-symmetry (BS) states of the protein at the ZINDO level. One-electron tunneling approximation is found to hold in electron tunneling between the anti-ferromagnetic binuclear and tetranuclear Fe/S clusters with moderate induced polarization of the core electrons. Calculated tunneling energy is about 3 eV higher than Fermi level in the band gap of the protein, which supports that the mechanism of electron transfer is quantum mechanical tunneling, as in the rest of electron transport chain. Resulting electron tunneling pathways consist of up to three key contributing protein residues between neighboring Fe/S clusters. A distinct signature of the wave properties of electrons is observed as quantum interferences when multiple tunneling pathways exist. In N6a-N6b, electron tunnels along different pathways depending on the involved BS states, suggesting possible fluctuations of the tunneling pathways driven by the local protein environment. The calculated distance dependence of the electron transfer rates with internal water molecules included are in good agreement with a reported phenomenological relation. PMID:21495666

  11. Organic electronic devices via interface engineering

    NASA Astrophysics Data System (ADS)

    Xu, Qianfei

    This dissertation focuses on interface engineering and its influence on organic electronic devices. A comprehensive review of interface studies in organic electronic devices is presented in Chapter 1. By interface engineering at the cathode contact, an ultra-high efficiency green polymer light emitting diode is demonstrated in Chapter 2. The interface modification turns out to be solution processable by using calcium acetylacetonate, donated by Ca(acac)2. The device structure is Induim Tin Oxide (ITO)/3,4-polyethylenedioxythiophene-polystyrene-sulfonate (PEDOT)/Green polyfluorene/Ca(acac) 2/Al. Based on this structure, we obtained device efficiencies as high as 28 cd/A at 2650 cd/m2, which is about a 3 times improvement over previous devices. The mechanism of this nano-layer has been studied by I-L-V measurements, photovoltaic measurements, XPS/UPS studies, impedance measurements as well as transient EL studies. The interfacial layer plays a crucial role for the efficiency improvement. It is believed to work as a hole blocking layer as well as an electron injection layer. Meanwhile, a systematic study on ITO electrodes is also carried out in Chapter 4. By engineering the interface at ITO electrode, the device lifetime has been improved. In Chapter 5, very bright white emission PLEDs are fabricated based on blue polyfluorene (PF) doped with 1 wt% 6, 8, 15, 17-tetraphyenyl-1.18, 4.5, 9.10, 13.14-tetrabenzoheptacene (TBH). The maximum luminance exceeds 20,000 cd/m2. The maximum luminance efficiency is 3.55 cd/A at 4228 cd/m2 while the maximum power efficiency is 1.6 lm/W at 310 cd/m2. The white color is achieved by an incomplete energy transfer from blue PF to TBH. The devices show super stable CIE coordinates as a function of current density. The interface engineering is also applied to memory devices. In Chapter 6, a novel nonvolatile memory device is fabricated by inserting a buffer layer at the anode contact. Devices with the structure of Cu

  12. Quantum-mechanical treatment of an electron undergoing synchrotron radiation.

    NASA Technical Reports Server (NTRS)

    White, D.

    1972-01-01

    The problem of an electron moving perpendicular to an intense magnetic field is approached from the framework of quantum mechanics. A numerical solution to the related rate equations describing the probabilities of occupation of the electron's energy states is put forth along with the expected errors involved. The quantum-mechanical approach is found to predict a significant amount of energy broadening with time for an initially monoenergetic electron beam entering a region of an intense magnetic field as long as the product of initial energy and magnetic field is of order 50 MG BeV or larger.

  13. Gaussian-modulated coherent-state measurement-device-independent quantum key distribution

    NASA Astrophysics Data System (ADS)

    Ma, Xiang-Chun; Sun, Shi-Hai; Jiang, Mu-Sheng; Gui, Ming; Liang, Lin-Mei

    2014-04-01

    Measurement-device-independent quantum key distribution (MDI-QKD), leaving the detection procedure to the third partner and thus being immune to all detector side-channel attacks, is very promising for the construction of high-security quantum information networks. We propose a scheme to implement MDI-QKD, but with continuous variables instead of discrete ones, i.e., with the source of Gaussian-modulated coherent states, based on the principle of continuous-variable entanglement swapping. This protocol not only can be implemented with current telecom components but also has high key rates compared to its discrete counterpart; thus it will be highly compatible with quantum networks.

  14. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  15. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  16. Time-Resolved Electronic Relaxation Processes in Self-Organized Quantum Dots

    DTIC Science & Technology

    2005-05-16

    in a quantum dot infrared photodetector ,” paper CthM11, presented at CLEO, Baltimore, 2003. K. Kim, T. Norris, J. Singh, P. Bhattacharya...nanostructures have been equally spectacular. Following the development of quantum-well infrared photodetectors in the late 1980’s and early 90’s...4]. The quantum cascade laser is of course the best known of the new devices, as it constitutes an entirely new concept in semiconductor laser

  17. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ethiraj, Anita Sagadevan, E-mail: anita.ethiraj@vit.ac.in; Center for Nanotechnology Research, VIT University, Vellore, TamilNadu-632014; Rhen, Dani

    2016-05-06

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-phenyl)-4,4′-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibitedmore » bright electroluminescence emission of 24 cd/m{sup 2} at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m{sup 2} at ∼22 Volts.« less

  18. Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

    PubMed

    Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

    2017-04-13

    Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

  19. Quantum Devices Bonded Beneath a Superconducting Shield: Part 2

    NASA Astrophysics Data System (ADS)

    McRae, Corey Rae; Abdallah, Adel; Bejanin, Jeremy; Earnest, Carolyn; McConkey, Thomas; Pagel, Zachary; Mariantoni, Matteo

    The next-generation quantum computer will rely on physical quantum bits (qubits) organized into arrays to form error-robust logical qubits. In the superconducting quantum circuit implementation, this architecture will require the use of larger and larger chip sizes. In order for on-chip superconducting quantum computers to be scalable, various issues found in large chips must be addressed, including the suppression of box modes (due to the sample holder) and the suppression of slot modes (due to fractured ground planes). By bonding a metallized shield layer over a superconducting circuit using thin-film indium as a bonding agent, we have demonstrated proof of concept of an extensible circuit architecture that holds the key to the suppression of spurious modes. Microwave characterization of shielded transmission lines and measurement of superconducting resonators were compared to identical unshielded devices. The elimination of box modes was investigated, as well as bond characteristics including bond homogeneity and the presence of a superconducting connection.

  20. Implementing an ancilla-free 1→M economical phase-covariant quantum cloning machine with superconducting quantum-interference devices in cavity QED

    NASA Astrophysics Data System (ADS)

    Yu, Long-Bao; Zhang, Wen-Hai; Ye, Liu

    2007-09-01

    We propose a simple scheme to realize 1→M economical phase-covariant quantum cloning machine (EPQCM) with superconducting quantum interference device (SQUID) qubits. In our scheme, multi-SQUIDs are fixed into a microwave cavity by adiabatic passage for their manipulation. Based on this model, we can realize the EPQCM with high fidelity via adiabatic quantum computation.

  1. Carbon nanotube chemistry and assembly for electronic devices

    NASA Astrophysics Data System (ADS)

    Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

    2009-05-01

    Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

  2. Large Signal Time Dependent Quantum Mechanical Transport in Quantum Phase Based Devices

    DTIC Science & Technology

    1994-06-10

    tansport ths spatial dependence suggests equilibrium electron temperature values that difer fr•m the ambient. The prospect of quantum heMing and cooling...the factor 21 is a consequence of the defintion of the nionlocal coordinate (wen eqn (7)]. In this transformation it APPENDIX C is asserted that the

  3. Quantum theory for 1D X-ray free electron laser

    DOE PAGES

    Anisimov, Petr Mikhaylovich

    2017-09-19

    Classical 1D X-ray Free Electron Laser (X-ray FEL) theory has stood the test of time by guiding FEL design and development prior to any full-scale analysis. Future X-ray FELs and inverse-Compton sources, where photon recoil approaches an electron energy spread value, push the classical theory to its limits of applicability. After substantial efforts by the community to find what those limits are, there is no universally agreed upon quantum approach to design and development of future X-ray sources. We offer a new approach to formulate the quantum theory for 1D X-ray FELs that has an obvious connection to the classicalmore » theory, which allows for immediate transfer of knowledge between the two regimes. In conclusion, we exploit this connection in order to draw quantum mechanical conclusions about the quantum nature of electrons and generated radiation in terms of FEL variables.« less

  4. Valley splitting of single-electron Si MOS quantum dots

    DOE PAGES

    Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; ...

    2016-12-19

    Here, silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physicsmore » between the two samples is essentially the same.« less

  5. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  6. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  7. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  8. Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

    PubMed

    Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

    2016-03-03

    We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Modeling quantum cascade lasers: Coupled electron and phonon transport far from equilibrium and across disparate spatial scales

    DOE PAGES

    Shi, Y. B.; Mei, S.; Jonasson, O.; ...

    2016-12-28

    Quantum cascade lasers (QCLs) are high-power coherent light sources in the midinfrared and terahertz parts of the electromagnetic spectrum. They are devices in which the electronic and lattice systems are far from equilibrium, strongly coupled to one another, and the problem bridges disparate spatial scales. Here, we present our ongoing work on the multiphysics and multiscale simulation of far-from-equilibrium transport of charge and heat in midinfrared QCLs.

  10. In situ electron-beam polymerization stabilized quantum dot micelles.

    PubMed

    Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

    2011-04-19

    A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

  11. Measurement-Device-Independent Quantum Cryptography

    NASA Astrophysics Data System (ADS)

    Tang, Zhiyuan

    Quantum key distribution (QKD) enables two legitimate parties to share a secret key even in the presence of an eavesdropper. The unconditional security of QKD is based on the fundamental laws of quantum physics. Original security proofs of QKD are based on a few assumptions, e.g., perfect single photon sources and perfect single-photon detectors. However, practical implementations of QKD systems do not fully comply with such assumptions due to technical limitations. The gap between theory and implementations leads to security loopholes in most QKD systems, and several attacks have been launched on sophisticated QKD systems. Particularly, the detectors have been found to be the most vulnerable part of QKD. Much effort has been put to build side-channel-free QKD systems. Solutions such as security patches and device-independent QKD have been proposed. However, the former are normally ad-hoc, and cannot close unidentified loopholes. The latter, while having the advantages of removing all assumptions on devices, is impractical to implement today. Measurement-device-independent QKD (MDI-QKD) turns out to be a promising solution to the security problem of QKD. In MDI-QKD, all security loopholes, including those yet-to-be discovered, have been removed from the detectors, the most critical part in QKD. In this thesis, we investigate issues related to the practical implementation and security of MDI-QKD. We first present a demonstration of polarization-encoding MDI-QKD. Taking finite key effect into account, we achieve a secret key rate of 0.005 bit per second (bps) over 10 km spooled telecom fiber, and a 1600-bit key is distributed. This work, together with other demonstrations, shows the practicality of MDI-QKD. Next we investigate a critical assumption of MDI-QKD: perfect state preparation. We apply the loss-tolerant QKD protocol and adapt it to MDI-QKD to quantify information leakage due to imperfect state preparation. We then present an experimental demonstration of

  12. Physics of Quantum Structures in Photovoltaic Devices

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Andersen, John D.

    2005-01-01

    There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

  13. Nanostructured Quantum Dots or Dashes in Photovoltaic Devices and Methods Thereof

    NASA Technical Reports Server (NTRS)

    Raffaele, Ryne P. (Inventor); Wilt, David M. (Inventor)

    2015-01-01

    A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

  14. Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

    NASA Astrophysics Data System (ADS)

    Ihara, S.; Andreev, A.; Williams, D. A.; Kodera, T.; Oda, S.

    2015-07-01

    We report on fabrication and transport properties of lithographically defined single quantum dots (QDs) in single electron transistors with ultrathin silicon-on-insulator (SOI) substrate. We observed comparatively large charging energy E C ˜ 20 meV derived from the stability diagram at a temperature of 4.2 K. We also carried out three-dimensional calculations of the capacitance matrix and transport properties through the QD for the real structure geometry and found an excellent quantitative agreement with experiment of the calculated main parameters of stability diagram (charging energy, period of Coulomb oscillations, and asymmetry of the diamonds). The obtained results confirm fabrication of well-defined integrated QDs as designed with ultrathin SOI that makes it possible to achieve relatively large QD charging energies, which is useful for stable and high temperature operation of single electron devices.

  15. High-Speed Device-Independent Quantum Random Number Generation without a Detection Loophole.

    PubMed

    Liu, Yang; Yuan, Xiao; Li, Ming-Han; Zhang, Weijun; Zhao, Qi; Zhong, Jiaqiang; Cao, Yuan; Li, Yu-Huai; Chen, Luo-Kan; Li, Hao; Peng, Tianyi; Chen, Yu-Ao; Peng, Cheng-Zhi; Shi, Sheng-Cai; Wang, Zhen; You, Lixing; Ma, Xiongfeng; Fan, Jingyun; Zhang, Qiang; Pan, Jian-Wei

    2018-01-05

    Quantum mechanics provides the means of generating genuine randomness that is impossible with deterministic classical processes. Remarkably, the unpredictability of randomness can be certified in a manner that is independent of implementation devices. Here, we present an experimental study of device-independent quantum random number generation based on a detection-loophole-free Bell test with entangled photons. In the randomness analysis, without the independent identical distribution assumption, we consider the worst case scenario that the adversary launches the most powerful attacks against the quantum adversary. After considering statistical fluctuations and applying an 80  Gb×45.6  Mb Toeplitz matrix hashing, we achieve a final random bit rate of 114  bits/s, with a failure probability less than 10^{-5}. This marks a critical step towards realistic applications in cryptography and fundamental physics tests.

  16. Electronic energy transfer: Localized operator partitioning of electronic energy in composite quantum systems

    NASA Astrophysics Data System (ADS)

    Khan, Yaser; Brumer, Paul

    2012-11-01

    A Hamiltonian based approach using spatially localized projection operators is introduced to give precise meaning to the chemically intuitive idea of the electronic energy on a quantum subsystem. This definition facilitates the study of electronic energy transfer in arbitrarily coupled quantum systems. In particular, the decomposition scheme can be applied to molecular components that are strongly interacting (with significant orbital overlap) as well as to isolated fragments. The result defines a consistent electronic energy at all internuclear distances, including the case of separated fragments, and reduces to the well-known Förster and Dexter results in their respective limits. Numerical calculations of coherent energy and charge transfer dynamics in simple model systems are presented and the effect of collisionally induced decoherence is examined.

  17. Breakdown of Landau Fermi liquid theory: Restrictions on the degrees of freedom of quantum electrons

    NASA Astrophysics Data System (ADS)

    Su, Yue-Hua; Lu, Han-Tao

    2018-04-01

    One challenge in contemporary condensed matter physics is to understand unconventional electronic physics beyond the paradigm of Landau Fermi-liquid theory. Here, we present a perspective that posits that most such examples of unconventional electronic physics stem from restrictions on the degrees of freedom of quantum electrons in Landau Fermi liquids. Since the degrees of freedom are deeply connected to the system's symmetries and topology, these restrictions can thus be realized by external constraints or by interaction-driven processes via the following mechanisms: (i) symmetry breaking, (ii) new emergent symmetries, and (iii) nontrivial topology. Various examples of unconventional electronic physics beyond the reach of traditional Landau Fermi liquid theory are extensively investigated from this point of view. Our perspective yields basic pathways to study the breakdown of Landau Fermi liquids and also provides a guiding principle in the search for novel electronic systems and devices.

  18. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Electronic position fixing devices. 184.410 Section 184.410 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position...

  19. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Electronic position fixing devices. 184.410 Section 184.410 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position...

  20. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Electronic position fixing devices. 184.410 Section 184.410 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position...

  1. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Electronic position fixing devices. 184.410 Section 184.410 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position...

  2. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Electronic position fixing devices. 184.410 Section 184.410 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position...

  3. Programming and Tuning a Quantum Annealing Device to Solve Real World Problems

    NASA Astrophysics Data System (ADS)

    Perdomo-Ortiz, Alejandro; O'Gorman, Bryan; Fluegemann, Joseph; Smelyanskiy, Vadim

    2015-03-01

    Solving real-world applications with quantum algorithms requires overcoming several challenges, ranging from translating the computational problem at hand to the quantum-machine language to tuning parameters of the quantum algorithm that have a significant impact on the performance of the device. In this talk, we discuss these challenges, strategies developed to enhance performance, and also a more efficient implementation of several applications. Although we will focus on applications of interest to NASA's Quantum Artificial Intelligence Laboratory, the methods and concepts presented here apply to a broader family of hard discrete optimization problems, including those that occur in many machine-learning algorithms.

  4. Two-dimensional electron gas in monolayer InN quantum wells

    DOE PAGES

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  5. Possible 6-qubit NMR quantum computer device material; simulator of the NMR line width

    NASA Astrophysics Data System (ADS)

    Hashi, K.; Kitazawa, H.; Shimizu, T.; Goto, A.; Eguchi, S.; Ohki, S.

    2002-12-01

    For an NMR quantum computer, splitting of an NMR spectrum must be larger than a line width. In order to find a best device material for a solid-state NMR quantum computer, we have made a simulation program to calculate the NMR line width due to the nuclear dipole field by the 2nd moment method. The program utilizes the lattice information prepared by commercial software to draw a crystal structure. By applying this program, we can estimate the NMR line width due to the nuclear dipole field without measurements and find a candidate material for a 6-qubit solid-state NMR quantum computer device.

  6. Cavity Exciton-Polariton mediated, Single-Shot Quantum Non-Demolition measurement of a Quantum Dot Electron Spin

    NASA Astrophysics Data System (ADS)

    Puri, Shruti; McMahon, Peter; Yamamoto, Yoshihisa

    2014-03-01

    The quantum non-demolition (QND) measurement of a single electron spin is of great importance in measurement-based quantum computing schemes. The current single-shot readout demonstrations exhibit substantial spin-flip backaction. We propose a QND readout scheme for quantum dot (QD) electron spins in Faraday geometry, which differs from previous proposals and implementations in that it relies on a novel physical mechanism: the spin-dependent Coulomb exchange interaction between a QD spin and optically-excited quantum well (QW) microcavity exciton-polaritons. The Coulomb exchange interaction causes a spin-dependent shift in the resonance energy of the polarized polaritons, thus causing the phase and intensity response of left circularly polarized light to be different to that of the right circularly polarized light. As a result the QD electron's spin can be inferred from the response to a linearly polarized probe. We show that by a careful design of the system, any spin-flip backaction can be eliminated and a QND measurement of the QD electron spin can be performed within a few 10's of nanoseconds with fidelity 99:95%. This improves upon current optical QD spin readout techniques across multiple metrics, including fidelity, speed and scalability. National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan.

  7. Quantum many-body theory for electron spin decoherence in nanoscale nuclear spin baths.

    PubMed

    Yang, Wen; Ma, Wen-Long; Liu, Ren-Bao

    2017-01-01

    Decoherence of electron spins in nanoscale systems is important to quantum technologies such as quantum information processing and magnetometry. It is also an ideal model problem for studying the crossover between quantum and classical phenomena. At low temperatures or in light-element materials where the spin-orbit coupling is weak, the phonon scattering in nanostructures is less important and the fluctuations of nuclear spins become the dominant decoherence mechanism for electron spins. Since the 1950s, semi-classical noise theories have been developed for understanding electron spin decoherence. In spin-based solid-state quantum technologies, the relevant systems are in the nanometer scale and nuclear spin baths are quantum objects which require a quantum description. Recently, quantum pictures have been established to understand the decoherence and quantum many-body theories have been developed to quantitatively describe this phenomenon. Anomalous quantum effects have been predicted and some have been experimentally confirmed. A systematically truncated cluster-correlation expansion theory has been developed to account for the many-body correlations in nanoscale nuclear spin baths that are built up during electron spin decoherence. The theory has successfully predicted and explained a number of experimental results in a wide range of physical systems. In this review, we will cover this recent progress. The limitations of the present quantum many-body theories and possible directions for future development will also be discussed.

  8. Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

    PubMed

    Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

    2007-06-01

    We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

  9. Atomic electron energies including relativistic effects and quantum electrodynamic corrections

    NASA Technical Reports Server (NTRS)

    Aoyagi, M.; Chen, M. H.; Crasemann, B.; Huang, K. N.; Mark, H.

    1977-01-01

    Atomic electron energies have been calculated relativistically. Hartree-Fock-Slater wave functions served as zeroth-order eigenfunctions to compute the expectation of the total Hamiltonian. A first order correction to the local approximation was thus included. Quantum-electrodynamic corrections were made. For all orbitals in all atoms with 2 less than or equal to Z less than or equal to 106, the following quantities are listed: total energies, electron kinetic energies, electron-nucleus potential energies, electron-electron potential energies consisting of electrostatic and Breit interaction (magnetic and retardation) terms, and vacuum polarization energies. These results will serve for detailed comparison of calculations based on other approaches. The magnitude of quantum electrodynamic corrections is exhibited quantitatively for each state.

  10. Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Hawrylak, P.; Sheng, W.; Cheng, S.-J.

    2004-09-01

    Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

  11. Relativistic quantum chaos-An emergent interdisciplinary field.

    PubMed

    Lai, Ying-Cheng; Xu, Hong-Ya; Huang, Liang; Grebogi, Celso

    2018-05-01

    Quantum chaos is referred to as the study of quantum manifestations or fingerprints of classical chaos. A vast majority of the studies were for nonrelativistic quantum systems described by the Schrödinger equation. Recent years have witnessed a rapid development of Dirac materials such as graphene and topological insulators, which are described by the Dirac equation in relativistic quantum mechanics. A new field has thus emerged: relativistic quantum chaos. This Tutorial aims to introduce this field to the scientific community. Topics covered include scarring, chaotic scattering and transport, chaos regularized resonant tunneling, superpersistent currents, and energy level statistics-all in the relativistic quantum regime. As Dirac materials have the potential to revolutionize solid-state electronic and spintronic devices, a good understanding of the interplay between chaos and relativistic quantum mechanics may lead to novel design principles and methodologies to enhance device performance.

  12. Relativistic quantum chaos—An emergent interdisciplinary field

    NASA Astrophysics Data System (ADS)

    Lai, Ying-Cheng; Xu, Hong-Ya; Huang, Liang; Grebogi, Celso

    2018-05-01

    Quantum chaos is referred to as the study of quantum manifestations or fingerprints of classical chaos. A vast majority of the studies were for nonrelativistic quantum systems described by the Schrödinger equation. Recent years have witnessed a rapid development of Dirac materials such as graphene and topological insulators, which are described by the Dirac equation in relativistic quantum mechanics. A new field has thus emerged: relativistic quantum chaos. This Tutorial aims to introduce this field to the scientific community. Topics covered include scarring, chaotic scattering and transport, chaos regularized resonant tunneling, superpersistent currents, and energy level statistics—all in the relativistic quantum regime. As Dirac materials have the potential to revolutionize solid-state electronic and spintronic devices, a good understanding of the interplay between chaos and relativistic quantum mechanics may lead to novel design principles and methodologies to enhance device performance.

  13. Hybrid Quantum Device with Nitrogen-Vacancy Centers in Diamond Coupled to Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Li, Peng-Bo; Xiang, Ze-Liang; Rabl, Peter; Nori, Franco

    2016-07-01

    We show that nitrogen-vacancy (NV) centers in diamond interfaced with a suspended carbon nanotube carrying a dc current can facilitate a spin-nanomechanical hybrid device. We demonstrate that strong magnetomechanical interactions between a single NV spin and the vibrational mode of the suspended nanotube can be engineered and dynamically tuned by external control over the system parameters. This spin-nanomechanical setup with strong, intrinsic, and tunable magnetomechanical couplings allows for the construction of hybrid quantum devices with NV centers and carbon-based nanostructures, as well as phonon-mediated quantum information processing with spin qubits.

  14. Ion plated electronic tube device

    DOEpatents

    Meek, T.T.

    1983-10-18

    An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  15. Quantum-mechanical analysis of low-gain free-electron laser oscillators

    NASA Astrophysics Data System (ADS)

    Fares, H.; Yamada, M.; Chiadroni, E.; Ferrario, M.

    2018-05-01

    In the previous classical theory of the low-gain free-electron laser (FEL) oscillators, the electron is described as a point-like particle, a delta function in the spatial space. On the other hand, in the previous quantum treatments, the electron is described as a plane wave with a single momentum state, a delta function in the momentum space. In reality, an electron must have statistical uncertainties in the position and momentum domains. Then, the electron is neither a point-like charge nor a plane wave of a single momentum. In this paper, we rephrase the theory of the low-gain FEL where the interacting electron is represented quantum mechanically by a plane wave with a finite spreading length (i.e., a wave packet). Using the concepts of the transformation of reference frames and the statistical quantum mechanics, an expression for the single-pass radiation gain is derived. The spectral broadening of the radiation is expressed in terms of the spreading length of an electron, the relaxation time characterizing the energy spread of electrons, and the interaction time. We introduce a comparison between our results and those obtained in the already known classical analyses where a good agreement between both results is shown. While the correspondence between our results and the classical results are shown, novel insights into the electron dynamics and the interaction mechanism are presented.

  16. Theory of few photon dynamics in light emitting quantum dot devices

    NASA Astrophysics Data System (ADS)

    Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

    2009-10-01

    We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

  17. Quantum stream instability in coupled two-dimensional plasmas

    NASA Astrophysics Data System (ADS)

    Akbari-Moghanjoughi, M.

    2014-08-01

    In this paper the quantum counter-streaming instability problem is studied in planar two-dimensional (2D) quantum plasmas using the coupled quantum hydrodynamic (CQHD) model which incorporates the most important quantum features such as the statistical Fermi-Dirac electron pressure, the electron-exchange potential and the quantum diffraction effect. The instability is investigated for different 2D quantum electron systems using the dynamics of Coulomb-coupled carriers on each plasma sheet when these plasmas are both monolayer doped graphene or metalfilm (corresponding to 2D Dirac or Fermi electron fluids). It is revealed that there are fundamental differences between these two cases regarding the effects of Bohm's quantum potential and the electron-exchange on the instability criteria. These differences mark yet another interesting feature of the effect of the energy band dispersion of Dirac electrons in graphene. Moreover, the effects of plasma number-density and coupling parameter on the instability criteria are shown to be significant. This study is most relevant to low dimensional graphene-based field-effect-transistor (FET) devices. The current study helps in understanding the collective interactions of the low-dimensional coupled ballistic conductors and the nanofabrication of future graphene-based integrated circuits.

  18. Prediction of Spin-Polarization Effects in Quantum Wire Transport

    NASA Astrophysics Data System (ADS)

    Fasol, Gerhard; Sakaki, Hiroyuki

    1994-01-01

    We predict a new effect for transport in quantum wires: spontaneous spin polarization. Most work on transport in mesoscopic devices has assumed a model of non interacting, spin-free electrons. We introduce spin, electron pair scattering and microscopic crystal properties into the design of mesoscopic devices. The new spin polarization effect results from the fact that in a single mode quantum wire, electron and hole bands still have two spin subbands. In general, these two spin subbands are expected to be split even in zero magnetic field. At sufficiently low temperatures the electron pair scattering rates for one spin subband ( e.g., the spin-down) can be much larger than for the other spin subband. This effect can be used for an active spin polarizer device: hot electrons in one subband ( e.g., `spin up') pass with weak pair scattering, while electrons in the opposite subband ( e.g., `spin down'), have high probability of scattering into the `spin-up' subband, resulting in spin polarization of a hot electron beam.

  19. Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals.

    PubMed

    Zhang, Xiaoliang; Santra, Pralay Kanti; Tian, Lei; Johansson, Malin B; Rensmo, Håkan; Johansson, Erik M J

    2017-08-22

    Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.

  20. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOEpatents

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  1. The role of surface ligands in determining the electronic properties of quantum dot solids and their impact on photovoltaic figure of merits.

    PubMed

    Goswami, Prasenjit N; Mandal, Debranjan; Rath, Arup K

    2018-01-18

    Surface chemistry plays a crucial role in determining the electronic properties of quantum dot solids and may well be the key to mitigate loss processes involved in quantum dot solar cells. Surface ligands help to maintain the shape and size of the individual dots in solid films, to preserve the clean energy band gap of the individual particles and to control charge carrier conduction across solid films, in turn regulating their performance in photovoltaic applications. In this report, we show that the changes in size, shape and functional groups of small chain organic ligands enable us to modulate mobility, dielectric constant and carrier doping density of lead sulfide quantum dot solids. Furthermore, we correlate these results with performance, stability and recombination processes in the respective photovoltaic devices. Our results highlight the critical role of surface chemistry in the electronic properties of quantum dots. The role of the size, functionality and the surface coverage of the ligands in determining charge transport properties and the stability of quantum dot solids have been discussed. Our findings, when applied in designing new ligands with higher mobility and improved passivation of quantum dot solids, can have important implications for the development of high-performance quantum dot solar cells.

  2. Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.

    PubMed

    Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A

    2011-09-25

    Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.

  3. Quantum-Circuit Refrigerator

    NASA Astrophysics Data System (ADS)

    MöTtöNen, Mikko; Tan, Kuan Y.; Masuda, Shumpei; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Silveri, Matti; Grabert, Hermann

    Quantum technology holds great potential in providing revolutionizing practical applications. However, fast and precise cooling of the functional quantum degrees of freedom on demand remains a major challenge in many solid-state implementations, such as superconducting circuits. We demonstrate direct cooling of a superconducting resonator mode using voltage-controllable quantum tunneling of electrons in a nanoscale refrigerator. In our first experiments on this type of a quantum-circuit refrigerator, we measure the drop in the mode temperature by electron thermometry at a resistor which is coupled to the resonator mode through ohmic losses. To eliminate unwanted dissipation, we remove the probe resistor and directly observe the power spectrum of the resonator output in agreement with the so-called P(E) theory. We also demonstrate in microwave reflection experiments that the internal quality factor of the resonator can be tuned by orders of magnitude. In the future, our refrigerator can be integrated with different quantum electric devices, potentially enhancing their performance. For example, it may prove useful in the initialization of superconducting quantum bits and in dissipation-assisted quantum annealing. We acknowledge European Research Council Grant SINGLEOUT (278117) and QUESS (681311) for funding.

  4. Self-assembling hybrid diamond-biological quantum devices

    NASA Astrophysics Data System (ADS)

    Albrecht, A.; Koplovitz, G.; Retzker, A.; Jelezko, F.; Yochelis, S.; Porath, D.; Nevo, Y.; Shoseyov, O.; Paltiel, Y.; Plenio, M. B.

    2014-09-01

    The realization of scalable arrangements of nitrogen vacancy (NV) centers in diamond remains a key challenge on the way towards efficient quantum information processing, quantum simulation and quantum sensing applications. Although technologies based on implanting NV-centers in bulk diamond crystals or hybrid device approaches have been developed, they are limited by the achievable spatial resolution and by the intricate technological complexities involved in achieving scalability. We propose and demonstrate a novel approach for creating an arrangement of NV-centers, based on the self-assembling capabilities of biological systems and their beneficial nanometer spatial resolution. Here, a self-assembled protein structure serves as a structural scaffold for surface functionalized nanodiamonds, in this way allowing for the controlled creation of NV-structures on the nanoscale and providing a new avenue towards bridging the bio-nano interface. One-, two- as well as three-dimensional structures are within the scope of biological structural assembling techniques. We realized experimentally the formation of regular structures by interconnecting nanodiamonds using biological protein scaffolds. Based on the achievable NV-center distances of 11 nm, we evaluate the expected dipolar coupling interaction with neighboring NV-centers as well as the expected decoherence time. Moreover, by exploiting these couplings, we provide a detailed theoretical analysis on the viability of multiqubit quantum operations, suggest the possibility of individual addressing based on the random distribution of the NV intrinsic symmetry axes and address the challenges posed by decoherence and imperfect couplings. We then demonstrate in the last part that our scheme allows for the high-fidelity creation of entanglement, cluster states and quantum simulation applications.

  5. Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

    NASA Technical Reports Server (NTRS)

    Biegal, Bryan A.; Rafferty, Connor S.; Yu, Zhiping; Ancona, Mario G.; Dutton, Robert W.; Saini, Subhash (Technical Monitor)

    1998-01-01

    The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum

  6. Strong electron-hole exchange in coherently coupled quantum dots.

    PubMed

    Fält, Stefan; Atatüre, Mete; Türeci, Hakan E; Zhao, Yong; Badolato, Antonio; Imamoglu, Atac

    2008-03-14

    We have investigated few-body states in vertically stacked quantum dots. Because of a small interdot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange plays a prominent role. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of differential transmission allows us to obtain unambiguous signatures of the interplay between electron and hole-spin interactions. Small tunnel coupling also enables us to demonstrate all-optical charge sensing, where a conditional exciton energy shift in one dot identifies the charging state of the coupled partner.

  7. Quantum I/f noise in infrared detectors and scanning tunneling microscopes

    NASA Astrophysics Data System (ADS)

    Truong, Amanda Marie

    Noise is, by definition, any random and persistent disturbance, which interferes with the clarity of a signal. Modern electronic devices are designed to limit noise, and in most cases the classical forms of noise have been eliminated or greatly reduced through careful design. However, there is a fundamental, quite unavoidable type of noise, called quantum l/f noise, which occurs at low frequencies and is a fundamental consequence of the discrete nature of the charge carriers themselves. This quantum l/f noise is present in any physical cross section or process rate, such as carrier mobility, diffusion rates and scattering processes. Although quantum l/f noise has been observed for nearly a century, there has been much debate over its origin and formulation. But as modern electronic devices require greater levels of performance and detection, the l/f noise phenomenon has moved to the forefront, becoming the subject of intense research. Here, for the first time, the quantum l/f fluctuations present in both the dark current of the Quantum Well Intersubband Photodetector and the tunneling current of the Scanning Tunneling Microscope are investigated. Using the quantum l/f theory, the quantum l/f noise occurring in each of these devices is formulated. The theoretical noise results are then compared with the experimental findings of various authors with very good agreement. This important work provides a foundation for understanding quantum l/f noise and its causes in the QWIP and STM devices, and could ultimately lead to improved technology and noise reduction in these devices and others.

  8. Device and Method of Scintillating Quantum Dots for Radiation Imaging

    NASA Technical Reports Server (NTRS)

    Burke, Eric R. (Inventor); DeHaven, Stanton L. (Inventor); Williams, Phillip A. (Inventor)

    2017-01-01

    A radiation imaging device includes a radiation source and a micro structured detector comprising a material defining a surface that faces the radiation source. The material includes a plurality of discreet cavities having openings in the surface. The detector also includes a plurality of quantum dots disclosed in the cavities. The quantum dots are configured to interact with radiation from the radiation source, and to emit visible photons that indicate the presence of radiation. A digital camera and optics may be used to capture images formed by the detector in response to exposure to radiation.

  9. 78 FR 34669 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-10

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... importing wireless communication devices, portable music and data processing devices, and tablet computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  10. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating employee... 49 Transportation 4 2010-10-01 2010-10-01 false Use of railroad-supplied electronic devices. 220...

  11. Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

    PubMed

    Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

    2009-10-09

    Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

  12. On the quantum Landau collision operator and electron collisions in dense plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Daligault, Jérôme, E-mail: daligaul@lanl.gov

    2016-03-15

    The quantum Landau collision operator, which extends the widely used Landau/Fokker-Planck collision operator to include quantum statistical effects, is discussed. The quantum extension can serve as a reference model for including electron collisions in non-equilibrium dense plasmas, in which the quantum nature of electrons cannot be neglected. In this paper, the properties of the Landau collision operator that have been useful in traditional plasma kinetic theory and plasma transport theory are extended to the quantum case. We outline basic properties in connection with the conservation laws, the H-theorem, and the global and local equilibrium distributions. We discuss the Fokker-Planck formmore » of the operator in terms of three potentials that extend the usual two Rosenbluth potentials. We establish practical closed-form expressions for these potentials under local thermal equilibrium conditions in terms of Fermi-Dirac and Bose-Einstein integrals. We study the properties of linearized quantum Landau operator, and extend two popular approximations used in plasma physics to include collisions in kinetic simulations. We apply the quantum Landau operator to the classic test-particle problem to illustrate the physical effects embodied in the quantum extension. We present useful closed-form expressions for the electron-ion momentum and energy transfer rates. Throughout the paper, similarities and differences between the quantum and classical Landau collision operators are emphasized.« less

  13. On the quantum Landau collision operator and electron collisions in dense plasmas

    NASA Astrophysics Data System (ADS)

    Daligault, Jérôme

    2016-03-01

    The quantum Landau collision operator, which extends the widely used Landau/Fokker-Planck collision operator to include quantum statistical effects, is discussed. The quantum extension can serve as a reference model for including electron collisions in non-equilibrium dense plasmas, in which the quantum nature of electrons cannot be neglected. In this paper, the properties of the Landau collision operator that have been useful in traditional plasma kinetic theory and plasma transport theory are extended to the quantum case. We outline basic properties in connection with the conservation laws, the H-theorem, and the global and local equilibrium distributions. We discuss the Fokker-Planck form of the operator in terms of three potentials that extend the usual two Rosenbluth potentials. We establish practical closed-form expressions for these potentials under local thermal equilibrium conditions in terms of Fermi-Dirac and Bose-Einstein integrals. We study the properties of linearized quantum Landau operator, and extend two popular approximations used in plasma physics to include collisions in kinetic simulations. We apply the quantum Landau operator to the classic test-particle problem to illustrate the physical effects embodied in the quantum extension. We present useful closed-form expressions for the electron-ion momentum and energy transfer rates. Throughout the paper, similarities and differences between the quantum and classical Landau collision operators are emphasized.

  14. Electron-Phonon Systems on a Universal Quantum Computer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Macridin, Alexandru; Spentzouris, Panagiotis; Amundson, James

    We present an algorithm that extends existing quantum algorithms forsimulating fermion systems in quantum chemistry and condensed matter physics toinclude phonons. The phonon degrees of freedom are represented with exponentialaccuracy on a truncated Hilbert space with a size that increases linearly withthe cutoff of the maximum phonon number. The additional number of qubitsrequired by the presence of phonons scales linearly with the size of thesystem. The additional circuit depth is constant for systems with finite-rangeelectron-phonon and phonon-phonon interactions and linear for long-rangeelectron-phonon interactions. Our algorithm for a Holstein polaron problem wasimplemented on an Atos Quantum Learning Machine (QLM) quantum simulatoremployingmore » the Quantum Phase Estimation method. The energy and the phonon numberdistribution of the polaron state agree with exact diagonalization results forweak, intermediate and strong electron-phonon coupling regimes.« less

  15. Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

    NASA Astrophysics Data System (ADS)

    Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

    2018-01-01

    We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

  16. Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

    NASA Astrophysics Data System (ADS)

    Mi, X.; Cady, J. V.; Zajac, D. M.; Stehlik, J.; Edge, L. F.; Petta, J. R.

    2017-01-01

    We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

  17. Synaptic electronics: materials, devices and applications.

    PubMed

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  18. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  19. Dissipative time-dependent quantum transport theory.

    PubMed

    Zhang, Yu; Yam, Chi Yung; Chen, GuanHua

    2013-04-28

    A dissipative time-dependent quantum transport theory is developed to treat the transient current through molecular or nanoscopic devices in presence of electron-phonon interaction. The dissipation via phonon is taken into account by introducing a self-energy for the electron-phonon coupling in addition to the self-energy caused by the electrodes. Based on this, a numerical method is proposed. For practical implementation, the lowest order expansion is employed for the weak electron-phonon coupling case and the wide-band limit approximation is adopted for device and electrodes coupling. The corresponding hierarchical equation of motion is derived, which leads to an efficient and accurate time-dependent treatment of inelastic effect on transport for the weak electron-phonon interaction. The resulting method is applied to a one-level model system and a gold wire described by tight-binding model to demonstrate its validity and the importance of electron-phonon interaction for the quantum transport. As it is based on the effective single-electron model, the method can be readily extended to time-dependent density functional theory.

  20. Modeling and Simulation for Particle Radiation Damage to Electronic and Opto-Electronic Devices

    DTIC Science & Technology

    2018-01-25

    AFRL-RV-PS- AFRL-RV-PS- TR-2018-0001 TR-2018-0001 MODELING & SIMULATION FOR PARTICLE RADIATION DAMAGE TO ELECTRONIC AND OPTO- ELECTRONIC DEVICES... Electronic and Opto- Electronic Devices 5a. CONTRACT NUMBER FA9453-14-1-0248 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62601F 6. AUTHOR(S) Sanjay...nBp Diode Assuming the light is incident on the n-side of the photodiode, the drift-diffusion equation for the minority electron of the p-type

  1. Quantum Regime of a Two-Dimensional Phonon Cavity

    NASA Astrophysics Data System (ADS)

    Bolgar, Aleksey N.; Zotova, Julia I.; Kirichenko, Daniil D.; Besedin, Ilia S.; Semenov, Aleksander V.; Shaikhaidarov, Rais S.; Astafiev, Oleg V.

    2018-06-01

    We realize the quantum regime of a surface acoustic wave (SAW) resonator by demonstrating vacuum Rabi mode splitting due to interaction with a superconducting artificial atom. Reaching the quantum regime is physically difficult and technologically challenging since SAW devices consist of large arrays of narrow metal strips. This work paves the way for realizing analogues of quantum optical phenomena with phonons and can be useful in on-chip quantum electronics.

  2. Integrated photonics using colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

    2009-11-01

    Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

  3. Analysis of the kinestatic charge detection system as a high detective quantum efficiency electronic portal imaging device.

    PubMed

    Samant, Sanjiv S; Gopal, Arun

    2006-09-01

    Megavoltage x-ray imaging suffers from reduced image quality due to low differential x-ray attenuation and large Compton scatter compared with kilovoltage imaging. Notwithstanding this, electronic portal imaging devices (EPIDs) are now widely used in portal verification in radiotherapy as they offer significant advantages over film, including immediate digital imaging and superior contrast range. However video-camera-based EPIDs (VEPIDs) are limited by problems of low light collection efficiency and significant light scatter, leading to reduced contrast and spatial resolution. Indirect and direct detection-based flat-panel EPIDs have been developed to overcome these limitations. While flat-panel image quality has been reported to exceed that achieved with portal film, these systems have detective quantum efficiency (DQE) limited by the thin detection medium and are sensitive to radiation damage to peripheral read-out electronics. An alternative technology for high-quality portal imaging is presented here: kinesatic charge detection (KCD). The KCD is a scanning tri-electrode ion-chamber containing high-pressure noble gas (xenon at 100 atm) used in conjunction with a strip-collimated photon beam. The chamber is scanned across the patient, and an external electric field is used to regulate the cation drift velocity. By matching the scanning velocity with that of the cation (i.e., ion) drift velocity, the cations remain static in the object frame of reference, allowing temporal integration of the signal. The KCD offers several advantages as a portal imaging system. It has a thick detector geometry with an active detection depth of 6.1 cm, compared to the sub-millimeter thickness of the phosphor layer in conventional phosphor screens, leading to an order of magnitude advantage in quantum efficiency (>0.3). The unique principle of and the use of the scanning strip-collimated x-ray beam provide further integration of charges in time, reduced scatter, and a significantly

  4. On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities.

    PubMed

    Cai, Wei; Yang, Yongchao; Gao, Xumin; Yuan, Jialei; Yuan, Wei; Zhu, Hongbo; Wang, Yongjin

    2016-03-21

    We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

  5. Path Integrals for Electronic Densities, Reactivity Indices, and Localization Functions in Quantum Systems

    PubMed Central

    Putz, Mihai V.

    2009-01-01

    The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI) development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr’s quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions – all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving) many-electronic systems. PMID:20087467

  6. Path integrals for electronic densities, reactivity indices, and localization functions in quantum systems.

    PubMed

    Putz, Mihai V

    2009-11-10

    The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI) development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr's quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions - all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving) many-electronic systems.

  7. Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

    NASA Astrophysics Data System (ADS)

    Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

    2013-04-01

    The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

  8. Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

    PubMed

    Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

    2013-04-19

    The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

  9. Finite element modeling of micromachined MEMS photon devices

    NASA Astrophysics Data System (ADS)

    Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

    1999-09-01

    The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

  10. Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

    PubMed

    Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

    2018-05-15

    Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

  11. Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

    NASA Astrophysics Data System (ADS)

    Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

    2009-04-01

    A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.

  12. Quantum control of topological defects in magnetic systems

    NASA Astrophysics Data System (ADS)

    Takei, So; Mohseni, Masoud

    2018-02-01

    Energy-efficient classical information processing and storage based on topological defects in magnetic systems have been studied over the past decade. In this work, we introduce a class of macroscopic quantum devices in which a quantum state is stored in a topological defect of a magnetic insulator. We propose noninvasive methods to coherently control and read out the quantum state using ac magnetic fields and magnetic force microscopy, respectively. This macroscopic quantum spintronic device realizes the magnetic analog of the three-level rf-SQUID qubit and is built fully out of electrical insulators with no mobile electrons, thus eliminating decoherence due to the coupling of the quantum variable to an electronic continuum and energy dissipation due to Joule heating. For a domain wall size of 10-100 nm and reasonable material parameters, we estimate qubit operating temperatures in the range of 0.1-1 K, a decoherence time of about 0.01-1 μ s , and the number of Rabi flops within the coherence time scale in the range of 102-104 .

  13. Electron Spin Optical Orientation in Charged Quantum Dots

    NASA Astrophysics Data System (ADS)

    Shabaev, A.; Gershoni, D.; Korenev, V. L.

    2005-03-01

    We present a theory of nonresonant optical orientation of electron spins localized in quantum dots. This theory explains the negative circularly polarized photoluminescence of singlet trions localized in quantum dots previously observed in experiments where trion polarization changed to negative with time and where the degree of the negative polarization increased with intensity of pumping light. We have shown that this effect can be explained by the accumulation of dark excitons that occurs due to the spin blocking of the singlet trion formation - the major mechanism of dark exciton recombination. The accumulation of dark excitons results from a lack of electrons with a spin matching the exciton polarization. The electron spin lifetime is shortened by a transverse magnetic field or a temperature increase. This takes the block off the dark exciton recombination and restores the positive degree of trion polarization. The presented theory gives good agreement with experimental data.

  14. Spin-electron acoustic soliton and exchange interaction in separate spin evolution quantum plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Andreev, Pavel A., E-mail: andreevpa@physics.msu.ru

    Separate spin evolution quantum hydrodynamics is generalized to include the Coulomb exchange interaction, which is considered as interaction between the spin-down electrons being in quantum states occupied by one electron. The generalized model is applied to study the non-linear spin-electron acoustic waves. Existence of the spin-electron acoustic soliton is demonstrated. Contributions of concentration, spin polarization, and exchange interaction to the properties of the spin electron acoustic soliton are studied.

  15. 77 FR 60720 - Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-04

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data Processing Devices, and Tablet Computers... communication devices, portable music and data processing devices, and tablet computers, imported by Apple Inc...

  16. Phase-Reference-Free Experiment of Measurement-Device-Independent Quantum Key Distribution

    NASA Astrophysics Data System (ADS)

    Wang, Chao; Song, Xiao-Tian; Yin, Zhen-Qiang; Wang, Shuang; Chen, Wei; Zhang, Chun-Mei; Guo, Guang-Can; Han, Zheng-Fu

    2015-10-01

    Measurement-device-independent quantum key distribution (MDI QKD) is a substantial step toward practical information-theoretic security for key sharing between remote legitimate users (Alice and Bob). As with other standard device-dependent quantum key distribution protocols, such as BB84, MDI QKD assumes that the reference frames have been shared between Alice and Bob. In practice, a nontrivial alignment procedure is often necessary, which requires system resources and may significantly reduce the secure key generation rate. Here, we propose a phase-coding reference-frame-independent MDI QKD scheme that requires no phase alignment between the interferometers of two distant legitimate parties. As a demonstration, a proof-of-principle experiment using Faraday-Michelson interferometers is presented. The experimental system worked at 1 MHz, and an average secure key rate of 8.309 bps was obtained at a fiber length of 20 km between Alice and Bob. The system can maintain a positive key generation rate without phase compensation under normal conditions. The results exhibit the feasibility of our system for use in mature MDI QKD devices and its value for network scenarios.

  17. Laser-driven two-electron quantum dot in plasmas

    NASA Astrophysics Data System (ADS)

    Bahar, M. K.; Soylu, A.

    2018-06-01

    We have investigated the energies of two-electron parabolic quantum dots (TEPQdots) embedded in plasmas characterized by more general exponential cosine screened Coulomb (MGECSC) potential under the action of a monochromatic, linearly polarized laser field by solving the corresponding Schrödinger equation numerically via the asymptotic iteration method. The four different cases of the MGECSC potential constituted by various sets of the potential parameters are reckoned in modeling of the interactions in the plasma environments which are Debye and quantum plasmas. The plasma environment is a remarkable experimental argument for the quantum dots and the interactions in plasma environments are different compared to the interactions in an environment without plasma and the screening specifications of the plasmas can be controlled through the plasma parameters. These findings constitute our major motivation in consideration of the plasma environments. An appreciable confinement effect is made up by implementing the laser field on the TEPQdot. The influences of the laser field on the system are included by using the Ehlotzky approximation, and then Kramers-Henneberger transformation is carried out for the corresponding Schrödinger equation. The influences of the ponderomotive force on two-electron quantum dots embedded in plasmas are investigated. The behaviours, the similarities and the functionalities of the laser field, the plasma environment, and the quantum dot confinement are also scrutinized. In addition, the role of the plasma environments in the mentioned analysis is also discussed in detail.

  18. Measurement-Device-Independent Quantum Key Distribution over Untrustful Metropolitan Network

    NASA Astrophysics Data System (ADS)

    Tang, Yan-Lin; Yin, Hua-Lei; Zhao, Qi; Liu, Hui; Sun, Xiang-Xiang; Huang, Ming-Qi; Zhang, Wei-Jun; Chen, Si-Jing; Zhang, Lu; You, Li-Xing; Wang, Zhen; Liu, Yang; Lu, Chao-Yang; Jiang, Xiao; Ma, Xiongfeng; Zhang, Qiang; Chen, Teng-Yun; Pan, Jian-Wei

    2016-01-01

    Quantum cryptography holds the promise to establish an information-theoretically secure global network. All field tests of metropolitan-scale quantum networks to date are based on trusted relays. The security critically relies on the accountability of the trusted relays, which will break down if the relay is dishonest or compromised. Here, we construct a measurement-device-independent quantum key distribution (MDIQKD) network in a star topology over a 200-square-kilometer metropolitan area, which is secure against untrustful relays and against all detection attacks. In the field test, our system continuously runs through one week with a secure key rate 10 times larger than previous results. Our results demonstrate that the MDIQKD network, combining the best of both worlds—security and practicality, constitutes an appealing solution to secure metropolitan communications.

  19. Realization of a Cascaded Quantum System: Heralded Absorption of a Single Photon Qubit by a Single-Electron Charged Quantum Dot.

    PubMed

    Delteil, Aymeric; Sun, Zhe; Fält, Stefan; Imamoğlu, Atac

    2017-04-28

    Photonic losses pose a major limitation for the implementation of a quantum state transfer between nodes of a quantum network. A measurement that heralds a successful transfer without revealing any information about the qubit may alleviate this limitation. Here, we demonstrate the heralded absorption of a single photonic qubit, generated by a single neutral quantum dot, by a single-electron charged quantum dot that is located 5 m away. The transfer of quantum information to the spin degree of freedom takes place upon the emission of a photon; for a properly chosen or prepared quantum dot, the detection of this photon yields no information about the qubit. We show that this process can be combined with local operations optically performed on the destination node by measuring classical correlations between the absorbed photon color and the final state of the electron spin. Our work suggests alternative avenues for the realization of quantum information protocols based on cascaded quantum systems.

  20. Assessing the quantum physics impacts on future x-ray free-electron lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schmitt, Mark J.; Anisimov, Petr Mikhaylovich

    A new quantum mechanical theory of x-ray free electron lasers (XFELs) has been successfully developed that has placed LANL at the forefront of the understanding of quantum effects in XFELs. Our quantum theory describes the interaction of relativistic electrons with x-ray radiation in the periodic magnetic field of an undulator using the same mathematical formalism as classical XFEL theory. This places classical and quantum treatments on the same footing and allows for a continuous transition from one regime to the other eliminating the disparate analytical approaches previously used. Moreover, Dr. Anisimov, the architect of this new theory, is now consideredmore » a resource in the international FEL community for assessing quantum effects in XFELs.« less

  1. Wide-Band, High-Quantum-Efficiency Photodetector

    NASA Technical Reports Server (NTRS)

    Jackson, Deborah; Wilson, Daniel; Stern, Jeffrey

    2007-01-01

    A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

  2. High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

    NASA Astrophysics Data System (ADS)

    Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

    2018-04-01

    We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

  3. Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

    NASA Astrophysics Data System (ADS)

    Bürger, M.; Kemper, R. M.; Bader, C. A.; Ruth, M.; Declair, S.; Meier, C.; Förstner, J.; As, D. J.

    2013-09-01

    Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

  4. Future opportunities for advancing glucose test device electronics.

    PubMed

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-09-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano "ink" composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, "ink," and continuous processing development presents the opportunity for research collaboration with medical device designers. © 2011 Diabetes Technology Society.

  5. Quantum dot quantum cascade infrared photodetector

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning

    2014-04-28

    We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirpedmore » superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.« less

  6. Storing quantum information in spins and high-sensitivity ESR

    NASA Astrophysics Data System (ADS)

    Morton, John J. L.; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

  7. Storing quantum information in spins and high-sensitivity ESR.

    PubMed

    Morton, John J L; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

  8. Alloy and heterostructure architectures as promising tools for controlling electronic properties of semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Vaxenburg, Roman; Lifshitz, Efrat

    2012-02-01

    Tunability of energy levels and wavefunctions of carriers in colloidal quantum dots (CQDs) has a marked effect on numerous physical aspects, such as Coulomb interactions and charge separation, which in turn has a direct impact on the functioning of CQD-based opto-electronic devices. The electronic properties of CQDs are conventionally controlled by variation of their size. Here we demonstrate a theoretical approach to engineer the electronic properties of IV-VI CQDs by introducing an alloy composition in core and core/shell heterostructures, having the general chemical formula PbSexS1-x/PbSeyS1-y (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), while maintaining a constant size. The theoretical model considered an effective mass anisotropy and smooth potential step at the core/shell interface. The model revealed the influence induced by variation of chemical composition and core-to-shell division on the band-gap energy, remote states’ density, internal charge separation, electron-hole Coulomb interaction, and optical transition oscillator strength.

  9. Sandwiched confinement of quantum dots in graphene matrix for efficient electron transfer and photocurrent production

    PubMed Central

    Zhu, Nan; Zheng, Kaibo; Karki, Khadga J.; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E.; Pullerits, Tõnu; Chi, Qijin

    2015-01-01

    Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 109 s−1. Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications. PMID:25996307

  10. Sandwiched confinement of quantum dots in graphene matrix for efficient electron transfer and photocurrent production

    NASA Astrophysics Data System (ADS)

    Zhu, Nan; Zheng, Kaibo; Karki, Khadga J.; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E.; Pullerits, Tõnu; Chi, Qijin

    2015-05-01

    Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 109 s-1. Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications.

  11. Gate tunable parallel double quantum dots in InAs double-nanowire devices

    NASA Astrophysics Data System (ADS)

    Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K.; Jeppesen, S.; Samuelson, L.; Xu, H. Q.; Tarucha, S.

    2017-12-01

    We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.

  12. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  13. Tissue-electronics interfaces: from implantable devices to engineered tissues

    NASA Astrophysics Data System (ADS)

    Feiner, Ron; Dvir, Tal

    2018-01-01

    Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

  14. The Jordy Electronic Magnification Device: Opinions, Observations, and Commentary

    ERIC Educational Resources Information Center

    Francis, Barry

    2005-01-01

    The Jordy electronic magnification device is one of a small number of electronic headborne devices designed to provide people with low vision the capability to perform near-range, intermediate-range, and distance viewing tasks. This report seeks to define the benefits of using the Jordy as a low vision device by people who are legally blind. The…

  15. Spins and photons: connecting quantum registers in diamond

    NASA Astrophysics Data System (ADS)

    Childress, Lily

    2012-06-01

    Long-lived electronic and nuclear spin states have made the nitrogen-vacancy (NV) defect in diamond a leading candidate for quantum information processing in the solid state. Multi-qubit quantum registers formed by single defects and nearby nuclear spins can currently be controlled and detected with high fidelity. Nevertheless, development of coherent connections between distant NVs remains an outstanding challenge. One advantage to working with solid-state defects is the opportunity to integrate them with microfabricated mechanical, electronic, or optical devices; in principle, such devices could mediate interactions between registers, turning them into nodes within a larger quantum network. In the last few months, several experiments have made key steps toward realizing a coherent quantum interface between individual NV centers using a mechanical quantum bus [1] or optical channels [2,3]. This talk will explore the current state of the art, and report on recent observation of two photon quantum interference between different gate-tunable defect centers [2]. These results pave the way towards measurement-based entanglement between remote NV centers and the realization of quantum networks with solid-state spins.[4pt] [1] Kolkowitz et al., Science 335, 1603 (2012)[2] Bernien et al., Phys. Rev. Lett. 108, 043604 (2012)[3] Sipahigil et al., http://lanl.arxiv.org/abs/1112.3975

  16. Quantum limit of heat flow across a single electronic channel.

    PubMed

    Jezouin, S; Parmentier, F D; Anthore, A; Gennser, U; Cavanna, A; Jin, Y; Pierre, F

    2013-11-01

    Quantum physics predicts that there is a fundamental maximum heat conductance across a single transport channel and that this thermal conductance quantum, G(Q), is universal, independent of the type of particles carrying the heat. Such universality, combined with the relationship between heat and information, signals a general limit on information transfer. We report on the quantitative measurement of the quantum-limited heat flow for Fermi particles across a single electronic channel, using noise thermometry. The demonstrated agreement with the predicted G(Q) establishes experimentally this basic building block of quantum thermal transport. The achieved accuracy of below 10% opens access to many experiments involving the quantum manipulation of heat.

  17. Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

    PubMed Central

    House, M. G.; Kobayashi, T.; Weber, B.; Hile, S. J.; Watson, T. F.; van der Heijden, J.; Rogge, S.; Simmons, M. Y.

    2015-01-01

    Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon. PMID:26548556

  18. Quantum confinement engineering on a novel two dimensional electron gas based on KTaO3 oxide interface

    NASA Astrophysics Data System (ADS)

    Miao, Ludi; Wang, Jing; Du, Renzhong; Bedford, Bailey; Huber, Nathan; Zhao, Weiwei; Li, Qi; Qi Li's Research Group Team

    The discovery of two-dimensional electron gases (2DEGs) at transition metal oxide (TMO) surfaces and interfaces has opened up broad interest due to their exotic properties such as quantum Hall effect, 2D superconductivity and gate controlled ground states. Recently, 5 d TMOs are hotly investigated due to their strong spin-orbit coupling (SOC), a key element of topological materials. Among them, KTaO3 (KTO) not only hosts 2DEGs but also involves strong SOC. Here we report the discovery of electron gas based on KTO oxide interface, with low temperature mobility as large as 8000cm2V-1s-1. Strong Shubnikov-de Haas (SdH) oscillation in magnetoresistance is observed at 350 mK. Based on this playground we demonstrate a novel technique to perform quantum confinement engineering by inserting an insulating spacing layer into the interface. Indeed, we observed a drastic change in SdH oscillation from 3D-like behavior to 2D-like behavior. In addition, Fermi surface reconstruction due to the quantum confinement is also observed from SdH oscillation. Our results not only provide a novel playground for condensed matter physics and all-oxide device applications, but also open a promising new route in tailoring the dimensionality of electron gas systems. The research was supported in part by the DOE (Grant No. DE-FG02-08ER4653) on measurements and the NSF (Grant No. DMR-1411166) on nanofabrications.

  19. High power beta electron device - Beyond betavoltaics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ayers, William M.; Gentile, Charles A.

    Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

  20. High power beta electron device - Beyond betavoltaics

    DOE PAGES

    Ayers, William M.; Gentile, Charles A.

    2017-11-10

    Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

  1. High power beta electron device - Beyond betavoltaics.

    PubMed

    Ayers, William M; Gentile, Charles A

    2018-01-01

    Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. The approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cells convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. The power source can use a variety of beta radioisotopes and scales by stacking the devices. Copyright © 2017. Published by Elsevier Ltd.

  2. Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gamble, John King; Nielsen, Erik; Baczewski, Andrew David

    This paper describes our work over the past few years to use tools from quantum chemistry to describe electronic structure of nanoelectronic devices. These devices, dubbed "artificial atoms", comprise a few electrons, con ned by semiconductor heterostructures, impurities, and patterned electrodes, and are of intense interest due to potential applications in quantum information processing, quantum sensing, and extreme-scale classical logic. We detail two approaches we have employed: nite-element and Gaussian basis sets, exploring the interesting complications that arise when techniques that were intended to apply to atomic systems are instead used for artificial, solid-state devices.

  3. Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

    PubMed

    Kim, Do Hyeong; Wu, Chaoxing; Park, Dong Hyun; Kim, Woo Kyum; Seo, Hae Woon; Kim, Sang Wook; Kim, Tae Whan

    2018-05-02

    The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 2 and 8.5 × 10 3 , respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 4 s, and the number of endurance cycles was above 1 × 10 2 . The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

  4. Biased decoy-state measurement-device-independent quantum cryptographic conferencing with finite resources.

    PubMed

    Chen, RuiKe; Bao, WanSu; Zhou, Chun; Li, Hongwei; Wang, Yang; Bao, HaiZe

    2016-03-21

    In recent years, a large quantity of work have been done to narrow the gap between theory and practice in quantum key distribution (QKD). However, most of them are focus on two-party protocols. Very recently, Yao Fu et al proposed a measurement-device-independent quantum cryptographic conferencing (MDI-QCC) protocol and proved its security in the limit of infinitely long keys. As a step towards practical application for MDI-QCC, we design a biased decoy-state measurement-device-independent quantum cryptographic conferencing protocol and analyze the performance of the protocol in both the finite-key and infinite-key regime. From numerical simulations, we show that our decoy-state analysis is tighter than Yao Fu et al. That is, we can achieve the nonzero asymptotic secret key rate in long distance with approximate to 200km and we also demonstrate that with a finite size of data (say 1011 to 1013 signals) it is possible to perform secure MDI-QCC over reasonable distances.

  5. Chemical and quantum simulation of electron transfer through a polypeptide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ungar, L.W.; Voth, G.A.; Newton, M.D.

    1999-08-26

    Quantum rate theory, molecular dynamics simulations, and semiempirical electronic structure calculations are used to fully investigate electron transfer mediated by a solvated polypeptide for the first time. Using a stationary-phase approximation, the nonadiabatic electron-transfer rate constant is calculated from the nuclear free energies and the electronic coupling between the initial and final states. The former are obtained from quantum path integral and classical molecular dynamics simulations; the latter are calculated using semiempirical electronic structure calculations and the generalized Mulliken-Hush method. Importantly, no parameters are fit to kinetic data. The simulated system consists of a solvated four-proline polypeptide with a tris(bipyridine)rutheniummore » donor group and an oxypentamminecobalt acceptor group. From the simulation data entropy and energy contributions to the free energies are distinguished. Quantum suppression of the barrier, including important solvent contributions, is demonstrated. Although free energy profiles along the reaction coordinate are nearly parabolic, pronounced departures from harmonic behavior are found for the separate energy and entropy functions. Harmonic models of the system are compared to simulation results in order to quantify anharmonic effects. Electronic structure calculations show that electronic coupling elements vary considerably with system conformation, even when the effective donor-acceptor separation remains roughly constant. The calculations indicate that electron transfer in a significant range of conformations linking the polypeptide to the acceptor may contribute to the overall rate constant. After correction for limitations of the solvent model, the simulations and calculations agree well with the experimental activation energy and Arrhenius prefactor.« less

  6. Recent Progress on Stretchable Electronic Devices with Intrinsically Stretchable Components.

    PubMed

    Trung, Tran Quang; Lee, Nae-Eung

    2017-01-01

    Stretchable electronic devices with intrinsically stretchable components have significant inherent advantages, including simple fabrication processes, a high integrity of the stacked layers, and low cost in comparison with stretchable electronic devices based on non-stretchable components. The research in this field has focused on developing new intrinsically stretchable components for conductors, semiconductors, and insulators. New methodologies and fabrication processes have been developed to fabricate stretchable devices with intrinsically stretchable components. The latest successful examples of stretchable conductors for applications in interconnections, electrodes, and piezoresistive devices are reviewed here. Stretchable conductors can be used for electrode or sensor applications depending on the electrical properties of the stretchable conductors under mechanical strain. A detailed overview of the recent progress in stretchable semiconductors, stretchable insulators, and other novel stretchable materials is also given, along with a discussion of the associated technological innovations and challenges. Stretchable electronic devices with intrinsically stretchable components such as field-effect transistors (FETs), photodetectors, light-emitting diodes (LEDs), electronic skins, and energy harvesters are also described and a new strategy for development of stretchable electronic devices is discussed. Conclusions and future prospects for the development of stretchable electronic devices with intrinsically stretchable components are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. What people know about electronic devices: A descriptive study

    NASA Astrophysics Data System (ADS)

    Kieras, D. E.

    1982-10-01

    Informal descriptive results on the nature of people's natural knowledge of electronic devices are presented. Expert and nonexpert subjects were given an electronic device to examine and describe orally. The devices ranged from familiar everyday devices, to those familiar only to the expert, to unusual devices unfamiliar even to an expert. College students were asked to describe everyday devices from memory. The results suggest that device knowledge consists of the major categories of what the device is for, how it is used, its structure in terms of subdevices, its physical layout, how it works, and its behavior. A preliminary theoretical framework for device knowledge is that it consists of a hierarchy of schemas, corresponding to a hierarchial decomposition of the device into subdevices, with each level containing the major categories of information.

  8. Nature-Inspired Structural Materials for Flexible Electronic Devices.

    PubMed

    Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

    2017-10-25

    Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

  9. Gate-defined Quantum Confinement in Suspended Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Allen, Monica

    2013-03-01

    Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

  10. Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

    NASA Astrophysics Data System (ADS)

    Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

    2018-05-01

    Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

  11. Practical scheme for optimal measurement in quantum interferometric devices

    NASA Astrophysics Data System (ADS)

    Takeoka, Masahiro; Ban, Masashi; Sasaki, Masahide

    2003-06-01

    We apply a Kennedy-type detection scheme, which was originally proposed for a binary communications system, to interferometric sensing devices. We show that the minimum detectable perturbation of the proposed system reaches the ultimate precision bound which is predicted by quantum Neyman-Pearson hypothesis testing. To provide concrete examples, we apply our interferometric scheme to phase shift detection by using coherent and squeezed probe fields.

  12. Correlative fluorescence and electron microscopy of quantum dot labeled proteins on whole cells in liquid.

    PubMed

    Peckys, Diana B; Dukes, Madeline J; de Jonge, Niels

    2014-01-01

    Correlative fluorescence microscopy and scanning transmission electron microscopy (STEM) of cells fully immersed in liquid is a new methodology with many application areas. Proteins, in live cells immobilized on microchips, are labeled with fluorescent quantum dot (QD) nanoparticles. In this protocol, the epidermal growth factor receptor (EGFR) is labeled. The cells are fixed after a selected labeling time, for example, 5 min as needed to form EGFR dimers. The microchip with cells is then imaged with fluorescence microscopy. Thereafter, the microchip with the labeled cells and one with a spacer are assembled in a special microfluidic device and imaged with STEM.

  13. Electron-Nuclear Dynamics in a Quantum Dot under Nonunitary Electron Control

    DTIC Science & Technology

    2011-07-20

    relevant because inco - herent interactions are needed to initialize and read out the system. These experiments in quantum dots (QDs) ob- served dynamic...relaxation process is several orders of magnitude faster than what is used in Refs. [3,5]. The system we consider is a single electron trapped in a QD

  14. Thermal and magnetic properties of electron gas in toroidal quantum dot

    NASA Astrophysics Data System (ADS)

    Baghdasaryan, D. A.; Hayrapetyan, D. B.; Kazaryan, E. M.; Sarkisyan, H. A.

    2018-07-01

    One-electron states in a toroidal quantum dot in the presence of an external magnetic field have been considered. The magnetic field operator and the Schrodinger equation have been written in toroidal coordinates. The dependence of one-electron energy spectrum and wave function on the geometrical parameters of a toroidal quantum dot and magnetic field strength have been studied. The energy levels are employed to calculate the canonical partition function, which in its turn is used to obtain mean energy, heat capacity, entropy, magnetization, and susceptibility of noninteracting electron gas. The possibility to control the thermodynamic and magnetic properties of the noninteracting electron gas via changing the geometric parameters of the QD, magnetic field, and temperature, was demonstrated.

  15. Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chida, K.; Yamauchi, Y.; Arakawa, T.

    2013-12-04

    We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

  16. The challenge of detecting gravitational radiation is creating a new chapter in quantum electronics: Quantum nondemolition measurements

    NASA Technical Reports Server (NTRS)

    Braginsky, V. B.; Vorontsov, Y. I.; Thorne, K. S.

    1979-01-01

    Future gravitational wave antennas will be approximately 100 kilogram cylinders, whose end-to-end vibrations must be measured so accurately (10 to the -19th power centimeters) that they behave quantum mechanically. Moreover, the vibration amplitude must be measured over and over again without perturbing it (quantum nondemolition measurement). This contrasts with quantum chemistry, quantum optics, or atomic, nuclear, and elementary particle physics where measurements are usually made on an ensemble of identical objects, and care is not given to whether any single object is perturbed or destroyed by the measurement. Electronic techniques required for quantum nondemolition measurements are described as well as the theory underlying them.

  17. Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

    NASA Astrophysics Data System (ADS)

    Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

    2014-06-01

    In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

  18. Photon-assisted tunneling through a quantum dot

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kouwenhoven, L.P.; Jauhar, S.; McCormick, K.

    1994-07-15

    We study single-electron tunneling in a two-junction device in the presence of microwave radiation. We introduce a model for numerical simulations that extends the Tien-Gordon theory for photon-assisted tunneling to encompass correlated single-electron tunneling. We predict sharp current jumps which reflect the discrete photon energy [ital hf], and a zero-bias current whose sign changes when an electron is added to the central island of the device. Measurements on split-gate quantum dots show microwave-induced features that are in good agreement with the model.

  19. Natural occupation numbers in two-electron quantum rings.

    PubMed

    Tognetti, Vincent; Loos, Pierre-François

    2016-02-07

    Natural orbitals (NOs) are central constituents for evaluating correlation energies through efficient approximations. Here, we report the closed-form expression of the NOs of two-electron quantum rings, which are prototypical finite-extension systems and new starting points for the development of exchange-correlation functionals in density functional theory. We also show that the natural occupation numbers for these two-electron paradigms are in general non-vanishing and follow the same power law decay as atomic and molecular two-electron systems.

  20. Natural occupation numbers in two-electron quantum rings

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tognetti, Vincent, E-mail: vincent.tognetti@univ-rouen.fr; Loos, Pierre-François

    2016-02-07

    Natural orbitals (NOs) are central constituents for evaluating correlation energies through efficient approximations. Here, we report the closed-form expression of the NOs of two-electron quantum rings, which are prototypical finite-extension systems and new starting points for the development of exchange-correlation functionals in density functional theory. We also show that the natural occupation numbers for these two-electron paradigms are in general non-vanishing and follow the same power law decay as atomic and molecular two-electron systems.

  1. Preparation of reflective CsI photocathodes with reproducible high quantum efficiency

    NASA Astrophysics Data System (ADS)

    Maier-Komor, P.; Bauer, B. B.; Friese, J.; Gernhäuser, R.; Kienle, P.; Körner, H. J.; Montermann, G.; Zeitelhack, K.

    1995-02-01

    CsI as a solid UV-photocathode material has many promising applications in fast gaseous photon detectors. They are proposed in large area Ring Imaging CHerenkov (RICH) devices in forthcoming experiments at various high-energy particle accelerators. A high photon-to-electron conversion efficiency is a basic requirement for the successful operation of these devices. High reproducible quantum efficiencies could be achieved with CsI layers prepared by electron beam evaporation from a water-cooled copper crucible. CsI films were deposited in the thickness range of 30 to 500 μg/cm 2. Absorption coefficients and quantum efficiencies were measured in the wavelength region of 150 nm to 250 nm. The influence of various evaporation parameters on the quantum efficiency were investigated.

  2. Electrons in Flatland

    NASA Astrophysics Data System (ADS)

    MacDonald, Allan

    2007-04-01

    Like the classical squares and triangles in Edwin Abbott's 19th century social satire and science fiction novel Flatland, electrons and other quantum particles behave differently when confined to a two-dimensional world. Condensed matter physicists have been intrigued and regularly suprised by two-dimensional electron systems since they were first studied in semiconductor field-effect-transistor devices over forty years ago. I will discuss some important milestones in the study of two-dimensional electrn systems, from the discoveries of the integer and fractional quantum Hall effects in the 1980's to recent quantum Hall effect work on quasiparticles with non-Abelian quantum statistics. Special attention will be given to a new electronic Flatland that has risen to prominence recently, graphene, which consists of a single sheet of carbon atoms in a honeycomb lattice arrangement. Graphene provides a realization of two-dimensional massless Dirac fermions which interact via nearly instantaneous Coulomb interactions. Early research on graphene has demonstrated yet again that Flatland exceeds expectations.

  3. Multi-party Measurement-Device-Independent Quantum Key Distribution Based on Cluster States

    NASA Astrophysics Data System (ADS)

    Liu, Chuanqi; Zhu, Changhua; Ma, Shuquan; Pei, Changxing

    2018-03-01

    We propose a novel multi-party measurement-device-independent quantum key distribution (MDI-QKD) protocol based on cluster states. A four-photon analyzer which can distinguish all the 16 cluster states serves as the measurement device for four-party MDI-QKD. Any two out of four participants can build secure keys after the analyzers obtains successful outputs and the two participants perform post-processing. We derive a security analysis for the protocol, and analyze the key rates under different values of polarization misalignment. The results show that four-party MDI-QKD is feasible over 280 km in the optical fiber channel when the key rate is about 10- 6 with the polarization misalignment parameter 0.015. Moreover, our work takes an important step toward a quantum communication network.

  4. Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

    PubMed

    Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

    2014-07-22

    Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

  5. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH 3 molecular beam epitaxy

    DOE PAGES

    Browne, David A.; Wu, Yuh -Renn; Speck, James S.; ...

    2015-05-08

    Unipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In 0.14Ga 0.86N and In 0.19Ga 0.81N. Diode-like currentmore » voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. Furthermore, a drift diffusion Schrodinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.« less

  6. Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

    NASA Astrophysics Data System (ADS)

    Bracker, Allan; Gershoni, David; Korenev, Vladimir

    2005-03-01

    We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

  7. High-mobility hydrogen-terminated Si(111) transistors for measurement of six-fold valley degenerate two-dimensional electron systems in fractional quantum Hall regime

    NASA Astrophysics Data System (ADS)

    Hu, Binhui; Yazdanpanah, Mohamad Meqdad; Kane, Bruce E.

    2015-03-01

    The quality of hydrogen-terminated Si(111) (H-Si(111)) transistors has improved significantly. Peak electron mobility of 325,000 cm2/Vs was achieved at 90 mK, and the fractional quantum Hall effect (FQHE) at 1 < ν < 2 was studied extensively. We have further improved the device by solving gate leakage and contact problems with an updated design, in which a Si piece with thermal oxide acts as a gate through a vacuum cavity, and PN junctions are used to define a hexagonal two-dimensional (2D) region on a H-Si(111) piece. The device operates as an ambipolar transistor, in which a 2D electron system (2DES) and a 2D hole system can be induced at the same H-Si(111) surface. Peak electron mobility of more than 200,000 cm2/Vs is routinely achieved at 300 mK. The Si(111) surface has a six-fold valley degeneracy. The hexagonal device is designed to investigate the symmetry of the 2DES. Preliminary data show that the transport anisotropy at ν < 6 can be explained by the valley occupancy. The details of the valley occupancy can be caused by several mechanisms, such as miscut, magnetic field, pseudospin quantum Hall ferromagnetism (QHFM), and nematic valley polarization phases. The FQHE is investigated in magnetic fields up to 35T, and the properties of composite fermions will be discussed.

  8. Anomalous electron spin decoherence in an optically pumped quantum dot

    NASA Astrophysics Data System (ADS)

    Shi, Xiaofeng; Sham, L. J.

    2013-03-01

    We study the nuclear-spin-fluctuation induced spin decoherence of an electron (SDE) in an optically pumped quantum dot. The SDE is computed in terms of the steady distribution of the nuclear field (SDNF) formed through the hyperfine interaction (HI) with two different nuclear species in the dot. A feedback loop between the optically driven electron spin and the nuclear spin ensemble determines the SDNF [W. Yang and L. J. Sham, Phy. Rev. B 85, 235319(2012)]. Different from that work and others reviewed therein, where a bilinear HI, SαIβ , between the electron (or hole) spin S and the nuclear spin I is used, we use an effective nonlinear interaction of the form SαIβIγ derived from the Fermi-contact HI. Our feedback loop forms a multi-peak SDNF in which the SDE shows remarkable collapses and revivals in nanosecond time scale. Such an anomalous SDE results from a quantum interference effect of the electron Larmor precession in a multi-peak effective magnetic field. In the presence of a bilinear HI that suppresses the nuclear spin fluctuation, the non-Markovian SDE persists whenever there are finite Fermi contact interactions between two or more kinds of nuclei and the electron in the quantum dot. This work is supported by NSF(PHY 1104446) and the US Army Research Office MURI award W911NF0910406.

  9. Sketched oxide single-electron transistor

    NASA Astrophysics Data System (ADS)

    Cheng, Guanglei; Siles, Pablo F.; Bi, Feng; Cen, Cheng; Bogorin, Daniela F.; Bark, Chung Wung; Folkman, Chad M.; Park, Jae-Wan; Eom, Chang-Beom; Medeiros-Ribeiro, Gilberto; Levy, Jeremy

    2011-06-01

    Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly `sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ~1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

  10. Analysis of quantum information processors using quantum metrology

    NASA Astrophysics Data System (ADS)

    Kandula, Mark J.; Kok, Pieter

    2018-06-01

    Physical implementations of quantum information processing devices are generally not unique, and we are faced with the problem of choosing the best implementation. Here, we consider the sensitivity of quantum devices to variations in their different components. To measure this, we adopt a quantum metrological approach and find that the sensitivity of a device to variations in a component has a particularly simple general form. We use the concept of cost functions to establish a general practical criterion to decide between two different physical implementations of the same quantum device consisting of a variety of components. We give two practical examples of sensitivities of quantum devices to variations in beam splitter transmittivities: the Knill-Laflamme-Milburn (KLM) and reverse nonlinear sign gates for linear optical quantum computing with photonic qubits, and the enhanced optical Bell detectors by Grice and Ewert and van Loock. We briefly compare the sensitivity to the diamond distance and find that the latter is less suited for studying the behavior of components embedded within the larger quantum device.

  11. Finite Element Modeling of Micromachined MEMS Photon Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Datskos, P.G.; Evans, B.M.; Schonberger, D.

    1999-09-20

    The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We havemore » used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.« less

  12. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-29

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-850] Certain Electronic Imaging Devices... States after importation of certain electronic imaging devices by reason of infringement of certain....usitc.gov . The public record for this investigation may be viewed on the Commission's electronic docket...

  13. Electronic cigarette devices and oro-facial trauma (Literature review)

    NASA Astrophysics Data System (ADS)

    Ghazali, A. F.; Ismail, A. F.; Daud, A.

    2017-08-01

    Detrimental effects of cigarette smoking have been well described and recognized globally. With recent advancement of technology, electronic cigarette has been introduced and gained its popularity and became a global trend, especially among young adults. However, the safety of the electronic devices remains debatable. This paper aimed to compile and review the reported cases of oro-facial trauma related to the usage of electronic cigarette devices. A literature search was conducted using PubMed/Medline in December 2016. The search terms used were a combination of “oral trauma”, “dental trauma”, “oral injury” and “electronic cigarette”. The search included all abstract published from the inception of the database until December 2016. Abstract that was written in English, case report, letter to editors, clinical and human studies were included for analysis. All selected abstract were searched for full articles. A total of 8 articles were included for review. All of the articles were published in 2016 with mostly case reports. The sample size of the studies ranged from 1 to 15 patients. Seven of the included articles are from United States of America and one from Mexico. Our review concluded that the use of electronic cigarette devices posed not only a safety concern but also that the devices were mostly unregulated. There should be a recognized authority body to regulate the safety and standard of the electronic devices.

  14. Numerical simulations of quantum devices

    NASA Astrophysics Data System (ADS)

    Sandu, Titus

    This work has been motivated by the tremendous effort toward the next generation of electron devices that will replace the present CMOS (Complementary Metal Oxide Semiconductor). Non-equilibrium Green's function formalism (NEGF) and empirical tight-binding (ETB) methods have been utilized in this dissertation. We studied the transport properties of Si/SiO2 resonant tunneling diodes (RTDs) by employing NEGF. We analyzed the physics of electron transport in Si/SiO2 RTDs and provided some guidelines for the fabrication of such devices by considering the effect of interface roughness scattering. Atomic scale roughness is shown to be acceptable. As the island size of the roughness increases, the peak-to-valley ratio degrades to less than 5 for 1 nm roughness and less than 2 for 2 nm roughness. By the ETB method we calculated electronic and optical properties of the relatively new Si/BeSe0.41Te0.59 system, more precisely Si/BeSe0.41Te0.59 [001] superlattices (SLs). Two interface bands were found in the band gap of bulk silicon. They were related to the polar Si/BeSe0.41Te0.59 interface. In addition, numerical calculations showed that the optical gap is close to the fundamental gap of bulk Si and the transitions are optically allowed. Two more aspects have been studied with NEGF: intrinsic bistability and off-zone center current flow of electrons in the RTD. We showed that broadening of the quasi-bound state in the emitter by scattering reduces intrinsic bistability. So far in different theoretical papers dealing with intrinsic bistability, only the scattering in the well has been considered. Finally, we demonstrated that scattering induces off-zone center current flow of electrons in RTDs. In RTDs electrons usually have a zone-center current flow. This is due to the coherent transport for which Tsu-Esaki formula is valid. On the contrary, holes have off-zone-center current flow. We show that, generally, carrier current flow is off-center, which means that the hole

  15. Design considerations for multielectron double quantum dot qubits in silicon

    NASA Astrophysics Data System (ADS)

    Nielsen, Erik; Barnes, Edwin; Kestner, Jason

    2014-03-01

    Solid state double quantum dot (DQD) spin qubits can be created by confining two electrons to a DQD potential. We present results showing the viability and potential advantages of creating a DQD spin qubit with greater than two electrons, and which suggest that silicon devices which could realize these advantages are experimentally possible. Our analysis of a six-electron DQD uses full configuration interaction methods and shows an isolated qubit space in regimes which 3D quantum device simulations indicate are accessible experimentally. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  16. Decoherence and lead-induced interdot coupling in nonequilibrium electron transport through interacting quantum dots: A hierarchical quantum master equation approach

    NASA Astrophysics Data System (ADS)

    Härtle, R.; Cohen, G.; Reichman, D. R.; Millis, A. J.

    2013-12-01

    The interplay between interference effects and electron-electron interactions in electron transport through an interacting double quantum dot system is investigated using a hierarchical quantum master equation approach which becomes exact if carried to infinite order and converges well if the temperature is not too low. Decoherence due to electron-electron interactions is found to give rise to pronounced negative differential resistance, enhanced broadening of structures in current-voltage characteristics, and an inversion of the electronic population. Dependence on gate voltage is shown to be a useful method of distinguishing decoherence-induced phenomena from effects induced by other mechanisms such as the presence of a blocking state. Comparison of results obtained by the hierarchical quantum master equation approach to those obtained from the Born-Markov approximation to the Nakajima-Zwanzig equation and from the noncrossing approximation to the nonequilibrium Green's function reveals the importance of an interdot coupling that originates from the energy dependence of the conduction bands in the leads and the need for a systematic perturbative expansion.

  17. Large-scale semidefinite programming for many-electron quantum mechanics.

    PubMed

    Mazziotti, David A

    2011-02-25

    The energy of a many-electron quantum system can be approximated by a constrained optimization of the two-electron reduced density matrix (2-RDM) that is solvable in polynomial time by semidefinite programming (SDP). Here we develop a SDP method for computing strongly correlated 2-RDMs that is 10-20 times faster than previous methods [D. A. Mazziotti, Phys. Rev. Lett. 93, 213001 (2004)]. We illustrate with (i) the dissociation of N(2) and (ii) the metal-to-insulator transition of H(50). For H(50) the SDP problem has 9.4×10(6) variables. This advance also expands the feasibility of large-scale applications in quantum information, control, statistics, and economics. © 2011 American Physical Society

  18. 2D Quantum Transport Modeling in Nanoscale MOSFETs

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

    2001-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  19. Reading from electronic devices versus hardcopy text.

    PubMed

    Hue, Jennifer E; Rosenfield, Mark; Saá, Gianinna

    2014-01-01

    The use of electronic reading devices has increased dramatically. However, some individuals report increased visual symptoms when reading from electronic screens. This investigation compared reading from two electronic devices (Amazon Kindle or Apple Ipod) versus hardcopy text in two groups of 20 subjects. Subjects performed a 20 min reading task for each condition. Both the accommodative response and reading rate were monitored during the trial. Immediately post-task, subjects completed a questionnaire concerning the ocular symptoms experienced during the task. In comparing the Kindle with hardcopy, no significant difference in the total symptom score was observed, although the mean score for the symptoms of tired eyes and eye discomfort was significantly higher with the Kindle. No significant differences in reading rate were found. When comparing the Ipod with hardcopy, no significant differences in symptom scores were found. The mean reading rate with the Ipod was significantly slower than for hardcopy while the mean lag of accommodation was significantly larger for the Ipod. Given the significant increase in symptoms with the Kindle, and larger lag of accommodation and reduced reading rate with the Ipod, one may conclude that reading from electronic devices is not equivalent to hardcopy.

  20. Size and Temperature Dependence of Electron Transfer between CdSe Quantum Dots and a TiO 2 Nanobelt

    DOE PAGES

    Tafen, De Nyago; Prezhdo, Oleg V.

    2015-02-24

    Understanding charge transfer reactions between quantum dots (QD) and metal oxides is fundamental for improving photocatalytic, photovoltaic and electronic devices. The complexity of these processes makes it difficult to find an optimum QD size with rapid charge injection and low recombination. We combine time-domain density functional theory with nonadiabatic molecular dynamics to investigate the size and temperature dependence of the experimentally studied electron transfer and charge recombination at CdSe QD-TiO 2 nanobelt (NB) interfaces. The electron injection rate shows strong dependence on the QD size, increasing for small QDs. The rate exhibits Arrhenius temperature dependence, with the activation energy ofmore » the order of millielectronvolts. The charge recombination process occurs due to coupling of the electronic subsystem to vibrational modes of the TiO 2 NB. Inelastic electron-phonon scattering happens on a picosecond time scale, with strong dependence on the QD size. Our simulations demonstrate that the electron-hole recombination rate decreases significantly as the QD size increases, in excellent agreement with experiments. The temperature dependence of the charge recombination rates can be successfully modeled within the framework of the Marcus theory through optimization of the electronic coupling and the reorganization energy. Our simulations indicate that by varying the QD size, one can modulate the photoinduced charge separation and charge recombination, fundamental aspects of the design principles for high efficiency devices.« less